10:1:1:1 Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
DOI:10.1002/adma.200902450 JN:ADVANCED MATERIALS PY:2010
TC:183 AU: Jeong, Sunho;Ha, Young-Geun;Moon, Jooho;Facchetti, Antonio;Marks, Tobin J.;
10:1:1:2 High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors
DOI:10.1021/ja100615r JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:91 AU: Kim, Myung-Gil;Kim, Hyun Sung;Ha, Young-Geun;He, Jiaqing;Kanatzidis, Mercouri G.;Facchetti, Antonio;Marks, Tobin J.;
10:1:1:3 Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors
DOI:10.1021/ja104864j JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:78 AU: Han, Seung-Yeol;Herman, Gregory S.;Chang, Chih-hung;
10:1:1:4 Low-temperature, solution-processed metal oxide thin film transistors
DOI:10.1039/c1jm14452a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:77 AU: Jeong, Sunho;Moon, Jooho;
10:1:1:5 High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air
DOI:10.1002/adma.201003935 JN:ADVANCED MATERIALS PY:2011
TC:62 AU: Adamopoulos, George;Thomas, Stuart;Woebkenberg, Paul H.;Bradley, Donal D. C.;McLachlan, Martyn A.;Anthopoulos, Thomas D.;
10:1:1:6 Fully Flexible Solution-Deposited ZnO Thin-Film Transistors
DOI:10.1002/adma.201002163 JN:ADVANCED MATERIALS PY:2010
TC:64 AU: Song, Keunkyu;Noh, Junghun;Jun, Taehwan;Jung, Yangho;Kang, Hae-Yoon;Moon, Jooho;
10:1:1:7 Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors
DOI:10.1002/adma.201103173 JN:ADVANCED MATERIALS PY:2012
TC:69 AU: Park, Si Yun;Kim, Beom Joon;Kim, Kyongjun;Kang, Moon Sung;Lim, Keon-Hee;Il Lee, Tae;Myoung, Jae M.;Baik, Hong Koo;Cho, Jeong Ho;Kim, Youn Sang;
10:1:1:8 Delayed Ignition of Autocatalytic Combustion Precursors: Low-Temperature Nanomaterial Binder Approach to Electronically Functional Oxide Films
DOI:10.1021/ja301941q JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:18 AU: Kim, Myung-Gil;Hennek, Jonathan W.;Kim, Hyun Sung;Kanatzidis, Mercouri G.;Facchetti, Antonio;Marks, Tobin J.;
10:1:1:9 Metal salt-derived In-Ga-Zn-O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors
DOI:10.1039/c3tc30530a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:16 AU: Jeong, Sunho;Lee, Ji-Yoon;Lee, Sun Sook;Seo, Yeong-Hui;Kim, So-Yun;Park, Jang-Ung;Ryu, Beyong-Hwan;Yang, Wooseok;Moon, Jooho;Choi, Youngmin;
10:1:1:10 Spray-Deposited Li-Doped ZnO Transistors with Electron Mobility Exceeding 50 cm(2)/Vs
DOI:10.1002/adma.201001444 JN:ADVANCED MATERIALS PY:2010
TC:53 AU: Adamopoulos, George;Bashir, Aneeqa;Thomas, Stuart;Gillin, William P.;Georgakopoulos, Stamatis;Shkunov, Maxim;Baklar, Mohamed A.;Stingelin, Natalie;Maher, Robert C.;Cohen, Lesley F.;Bradley, Donal D. C.;Anthopoulos, Thomas D.;
10:1:1:11 High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing
DOI:10.1039/c0jm02178d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:50 AU: Jun, Taehwan;Song, Keunkyu;Jeong, Youngmin;Woo, Kyoohee;Kim, Dongjo;Bae, Changdeuck;Moon, Jooho;
10:1:1:12 A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors
DOI:10.1039/c2jm34162j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:22 AU: Song, Keunkyu;Yang, Wooseok;Jung, Yangho;Jeong, Sunho;Moon, Jooho;
10:1:1:13 High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method
DOI:10.1039/c1jm12227d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:55 AU: Avis, Christophe;Jang, Jin;
10:1:1:14 High-Mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-kappa Alumina Dielectric Working in Enhancement Mode
DOI:10.1021/am5050295 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Huang, Genmao;Duan, Lian;Dong, Guifang;Zhang, Deqiang;Qiu, Yong;
10:1:1:15 Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors
DOI:10.1039/c2jm16846d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:46 AU: Rim, You Seung;Jeong, Woong Hee;Kim, Dong Lim;Lim, Hyun Soo;Kim, Kyung Min;Kim, Hyun Jae;
10:1:1:16 High-mobility low-temperature ZnO transistors with low-voltage operation
DOI:10.1063/1.3428357 JN:APPLIED PHYSICS LETTERS PY:2010
TC:52 AU: Bong, Hyojin;Lee, Wi Hyoung;Lee, Dong Yun;Kim, Beom Joon;Cho, Jeong Ho;Cho, Kilwon;
10:1:1:17 High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel
DOI:10.1002/adma.200903761 JN:ADVANCED MATERIALS PY:2010
TC:45 AU: Liu, Jun;Buchholz, D. Bruce;Chang, Robert P. H.;Facchetti, Antonio;Marks, Tobin J.;
10:1:1:18 Exploratory Combustion Synthesis: Amorphous Indium Yttrium Oxide for Thin-Film Transistors
DOI:10.1021/ja303589v JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:25 AU: Hennek, Jonathan W.;Kim, Myung-Gil;Kanatzidis, Mercouri G.;Facchetti, Antonio;Marks, Tobin J.;
10:1:1:19 The role of solution-processed high-kappa gate dielectrics in electrical performance of oxide thin-film transistors
DOI:10.1039/c4tc00334a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:9 AU: Xu, Wangying;Wang, Han;Ye, Lei;Xu, Jianbin;
10:1:1:20 Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 degrees C for High-Performance Metal Oxide Field-Effect Transistors
DOI:10.1021/am504231h JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Je, So Yeon;Son, Byeong-Geun;Kim, Hyun-Gwan;Park, Man-Young;Do, Lee-Mi;Choi, Rino;Jeong, Jae Kyeong;
10:1:1:21 Graphene electrodes transfer-printed with a surface energy-mediated wet PDMS stamp: impact of Au doped-graphene for high performance soluble oxide thin-film transistors
DOI:10.1039/c3tc31292e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:5 AU: Jeong, Sunho;Jung, Min-Wook;Lee, Ji-Yoon;Kim, Hansun;Lim, Jongsun;An, Ki-Seok;Choi, Youngmin;Lee, Sun Sook;
10:1:1:22 All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics
DOI:10.1021/ja9103155 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:32 AU: Liu, Jun;Buchholz, D. Bruce;Hennek, Jonathan W.;Chang, Robert P. H.;Facchetti, Antonio;Marks, Tobin J.;
10:1:1:23 Two-component solution processing of oxide semiconductors for thin-film transistors via self-combustion reaction
DOI:10.1039/c4tc00139g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:10 AU: Kang, Young Hun;Jeong, Sunho;Ko, Jung Min;Lee, Ji-Yoon;Choi, Youngmin;Lee, Changjin;Cho, Song Yun;
10:1:1:24 Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways
DOI:10.1002/adma.201400529 JN:ADVANCED MATERIALS PY:2014
TC:14 AU: Rim, You Seung;Chen, Huajun;Kou, Xiaolu;Duan, Hsin-Sheng;Zhou, Huanping;Cai, Min;Kim, Hyun Jae;Yang, Yang;
10:1:1:25 Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric
DOI:10.1021/am3022625 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:37 AU: Park, Jee Ho;Yoo, Young Bum;Lee, Keun Ho;Jang, Woo Soon;Oh, Jin Young;Chae, Soo Sang;Baik, Hong Koo;
10:1:1:26 Patterning of Flexible Transparent Thin-Film Transistors with Solution-Processed ZnO Using the Binary Solvent Mixture
DOI:10.1002/adfm.201100323 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:25 AU: Kim, Kyongjun;Park, Siyun;Seon, Jong-Baek;Lim, Keon-Hee;Char, Kookheon;Shin, Kyusoon;Kim, Youn Sang;
10:1:1:27 Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets
DOI:10.1039/c3tc31320d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Meena, Jagan Singh;Chu, Min-Ching;Chang, Yu-Cheng;You, Hsin-Chiang;Singh, Ranjodh;Liu, Po-Tsun;Shieh, Han-Ping D.;Chang, Feng-Chih;Ko, Fu-Hsiang;
10:1:1:28 High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 degrees C
DOI:10.1002/adma.201301622 JN:ADVANCED MATERIALS PY:2013
TC:25 AU: Lin, Yen-Hung;Faber, Hendrik;Zhao, Kui;Wang, Qingxiao;Amassian, Aram;McLachlan, Martyn;Anthopoulos, Thomas D.;
10:1:1:29 Molecular precursor derived and solution processed indium-zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition
DOI:10.1039/c3tc00841j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:9 AU: Hoffmann, Rudolf C.;Kaloumenos, Mareiki;Heinschke, Silvio;Erdem, Emre;Jakes, Peter;Eichel, Ruediger-A.;Schneider, Joerg J.;
10:1:1:30 Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In-Ga-Zn-O Thin-Film Transistors Using Hydrogen Peroxide
DOI:10.1021/am4054139 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:7 AU: Kwon, Jeong Moo;Jung, Joohye;Rim, You Seung;Kim, Dong Lim;Kim, Hyun Jae;
10:1:1:31 Chemically improved high performance printed indium gallium zinc oxide thin-film transistors
DOI:10.1039/c1jm13767k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:25 AU: Jeong, Sunho;Lee, Ji-Yoon;Lee, Sun Sook;Oh, Se-Wook;Lee, Hyun Ho;Seo, Yeong-Hui;Ryu, Beyong-Hwan;Choi, Youngmin;
10:1:1:32 Photobias Instability of High Performance Solution Processed Amorphous Zinc Tin Oxide Transistors
DOI:10.1021/am400110y JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:18 AU: Kim, Yoon Jang;Yang, Bong Seob;Oh, Seungha;Han, Sang Jin;Lee, Hong Woo;Heo, Jaeyeong;Jeong, Jae Kyeong;Kim, Hyeong Joon;
10:1:1:33 Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor
DOI:10.1021/am402153g JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:23 AU: Park, Jee Ho;Yoo, Young Bum;Lee, Keun Ho;Jang, Woo Soon;Oh, Jin Young;Chae, Soo Sang;Lee, Hyun Woo;Han, Sun Woong;Baik, Hong Koo;
10:1:1:34 UV-Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors
DOI:10.1002/adma.201204236 JN:ADVANCED MATERIALS PY:2013
TC:15 AU: Lim, Keon-Hee;Kim, Kyongjun;Kim, Seonjo;Park, Si Yun;Kim, Hyungjun;Kim, Youn Sang;
10:1:1:35 Enhanced mobility of solution-processed polycrystalline zinc tin oxide thin-film transistors via direct incorporation of water into precursor solution
DOI:10.1063/1.4896265 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Huang, Genmao;Duan, Lian;Zhao, Yunlong;Dong, Guifang;Zhang, Deqiang;Qiu, Yong;
10:1:1:36 Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn-Sn-O Semiconductors for Thin-Film Transistor Applications
DOI:10.1021/am505457t JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Kim, Seong Jip;Jeon, Hye-Ji;Oh, Sang-Jin;Lee, Sun Sook;Choi, Youngmin;Park, Jin-Seong;Jeong, Sunho;
10:1:1:37 Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors
DOI:10.1021/la401356u JN:LANGMUIR PY:2013
TC:8 AU: Jang, Kwang-Suk;Wee, Duyoung;Kim, Yun Ho;Kim, Jinsoo;Ahn, Taek;Ka, Jae-Won;Yi, Mi Hye;
10:1:1:38 High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
DOI:10.1063/1.4895782 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, G. X.;Liu, A.;Shan, F. K.;Meng, Y.;Shin, B. C.;Fortunato, E.;Martins, R.;
10:1:1:39 Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors
DOI:10.1039/c3tc30550c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:27 AU: Yang, Wooseok;Song, Keunkyu;Jung, Yangho;Jeong, Sunho;Moon, Jooho;
10:1:1:40 Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors
DOI:10.1039/c1jm11586c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:24 AU: Jun, Taehwan;Song, Keunkyu;Jung, Yangho;Jeong, Sunho;Moon, Jooho;
10:1:1:41 A high-temperature resistant polyimide gate insulator surface-modified with a YOx interlayer for high-performance, solution-processed Li-doped ZnO thin-film transistors
DOI:10.1039/c3tc31890g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:6 AU: Yoon, Jun-Young;Kim, Yun Ho;Ka, Jae-Won;Hong, Sung-Kwon;Yi, Mi Hye;Jang, Kwang-Suk;
10:1:1:42 Fully Patterned Low-Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis
DOI:10.1002/adfm.201202334 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:14 AU: Faber, Hendrik;Butz, Benjamin;Dieker, Christel;Spiecker, Erdmann;Halik, Marcus;
10:1:1:43 Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 degrees C
DOI:10.1063/1.4769091 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Xu, Xiaoli;Cui, Qingyu;Jin, Yizheng;Guo, Xiaojun;
10:1:1:44 Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
DOI:10.1039/c2jm33054g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:26 AU: Avis, Christophe;Kim, Youn Goo;Jang, Jin;
10:1:1:45 Room temperature vacuum-induced ligand removal and patterning of ZnO nanoparticles: from semiconducting films towards printed electronics
DOI:10.1039/b916778c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:26 AU: Richter, Thomas V.;Stelzl, Felix;Schulz-Gericke, Jan;Kerscher, Benjamin;Wuerfel, Uli;Niggemann, Michael;Ludwigs, Sabine;
10:1:1:46 Polymeric mold soft-patterned metal oxide field-effect transistors: critical factors determining device performance
DOI:10.1039/c4tc01530d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Kim, Seong Jip;Kim, Aryeon;Jo, Yejin;Yoon, Jun-Young;Lee, Sun Sook;Choi, Youngmin;Won, JongChan;Nahm, Sahn;Jang, Kwang-Suk;Kim, Yun Ho;Jeong, Sunho;
10:1:1:47 In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO
DOI:10.1021/am402919f JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:12 AU: Yu, Seong Hun;Kim, Beom Joon;Kang, Moon Sung;Kim, Se Hyun;Han, Jong Hun;Lee, Jun Young;Cho, Jeong Ho;
10:1:1:48 ZnO based field-effect transistors (FETs): solution-processable at low temperatures on flexible substrates
DOI:10.1039/c0jm01477j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:33 AU: Fleischhaker, Friederike;Wloka, Veronika;Hennig, Ingolf;
10:1:1:49 An 'aqueous route' for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates
DOI:10.1038/am.2013.11 JN:NPG ASIA MATERIALS PY:2013
TC:40 AU: Hwang, Young Hwan;Seo, Jin-Suk;Yun, Je Moon;Park, HyungJin;Yang, Shinhyuk;Park, Sang-Hee Ko;Bae, Byeong-Soo;
10:1:1:50 Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors
DOI:10.1021/cm2036234 JN:CHEMISTRY OF MATERIALS PY:2012
TC:13 AU: Cho, Song Yun;Kang, Young Hun;Jung, Jun-Young;Nam, So Youn;Lim, Jongsun;Yoon, Sung Cheol;Choi, Dong Hoon;Lee, Changjin;
10:1:1:51 Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air
DOI:10.1063/1.3568893 JN:APPLIED PHYSICS LETTERS PY:2011
TC:34 AU: Adamopoulos, George;Thomas, Stuart;Bradley, Donal D. C.;McLachlan, Martyn A.;Anthopoulos, Thomas D.;
10:1:1:52 Low-Energy Path to Dense HfO2 Thin Films with Aqueous Precursor
DOI:10.1021/cm102082j JN:CHEMISTRY OF MATERIALS PY:2011
TC:27 AU: Jiang, Kai;Anderson, Jeremy T.;Hoshino, Ken;Li, Dong;Wager, John F.;Keszler, Douglas A.;
10:1:1:53 High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
DOI:10.1063/1.4816060 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Nayak, Pradipta K.;Hedhili, M. N.;Cha, Dongkyu;Alshareef, H. N.;
10:1:1:54 High performance and high stability low temperature aqueous solution-derived Li-Zr co-doped ZnO thin film transistors
DOI:10.1039/c2jm15526e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Jung, Yangho;Yang, Wooseok;Koo, Chang Young;Song, Keunkyu;Moon, Jooho;
10:1:1:55 Direct photopatternable organic-inorganic hybrid gate dielectric for solution-processed flexible ZnO thin film transistors
DOI:10.1039/c1jm10791g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:15 AU: Jung, Yangho;Jun, Taewhan;Kim, Areum;Song, Keunkyu;Yeo, Tae Hoon;Moon, Jooho;
10:1:1:56 Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors
DOI:10.1039/c4tc00709c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Wee, Duyoung;Yoo, Sungmi;Kang, Young Hun;Kim, Yun Ho;Ka, Jae-Won;Cho, Song Yun;Lee, Changjin;Ryu, Juwhan;Yi, Mi Hye;Jang, Kwang-Suk;
10:1:1:57 Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors
DOI:10.1039/c1jm11418b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:16 AU: Song, Keunkyu;Jung, Yangho;Kim, Youngwoo;Kim, Areum;Hwang, Jae Kwon;Sung, Myung Mo;Moon, Jooho;
10:1:1:58 Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric
DOI:10.1021/am505602w JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:14 AU: Liu, Ao;Liu, Guo Xia;Zhu, Hui Hui;Xu, Feng;Fortunato, Elvira;Martins, Rodrigo;Shan, Fu Kai;
10:1:1:59 Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors
DOI:10.1039/c3tc31727g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:12 AU: Ko, Jieun;Kim, Joohee;Park, Si Yun;Lee, Eungkyu;Kim, Kyongjun;Lim, Keon-Hee;Kim, Youn Sang;
10:1:1:60 Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis
DOI:10.1021/am302722h JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:24 AU: Rim, You Seung;Lim, Hyun Soo;Kim, Hyun Jae;
10:1:1:61 Interface engineering for suppression of flat-band voltage shift in a solution-processed ZnO/polymer dielectric thin film transistor
DOI:10.1039/c3tc31376j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:6 AU: Kim, Kyongjun;Lee, Eungkyu;Kim, Joohee;Park, Si Yun;Lim, Keon-Hee;Shin, ChaeHo;Kim, Youn Sang;
10:1:1:62 Effects of Ga:N Addition on the Electrical Performance of Zinc Tin Oxide Thin Film Transistor by Solution-Processing
DOI:10.1021/am5013672 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Ahn, Byung Du;Jeon, Hye Ji;Park, Jin-Seong;
10:1:1:63 Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors
DOI:10.1063/1.3665912 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Kim, Kyung Min;Kim, Chi Wan;Heo, Jae-Seok;Na, Hyungil;Lee, Jung Eun;Park, Chang Bum;Bae, Jong-Uk;Kim, Chang-Dong;Jun, Myungchul;Hwang, Yong Kee;Meyers, Stephen T.;Grenville, Andrew;Keszler, Douglas A.;
10:1:1:64 Low temperature and solution-processed Na-doped zinc oxide transparent thin film transistors with reliable electrical performance using methanol developing and surface engineering
DOI:10.1039/c2jm33790h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:10 AU: Kim, Kyongjun;Park, Si Yun;Lim, Keon-Hee;Shin, ChaeHo;Myoung, Jae-Min;Kim, Youn Sang;
10:1:1:65 Water adsorption effects of nitrate ion coordinated Al2O3 dielectric for high performance metal-oxide thin-film transistor
DOI:10.1039/c3tc31589d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Park, Jee Ho;Kim, Kyongjun;Yoo, Young Bum;Park, Si Yun;Lim, Keon-Hee;Lee, Keun Ho;Baik, Hong Koo;Kim, Youn Sang;
10:1:1:66 Highly conductive p-type amorphous oxides from low-temperature solution processing
DOI:10.1063/1.4754608 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Li, Jinwang;Tokumitsu, Eisuke;Koyano, Mikio;Mitani, Tadaoki;Shimoda, Tatsuya;
10:1:1:67 Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
DOI:10.1021/am303235z JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Nayak, Pradipta K.;Hedhili, Mohamed N.;Cha, Dongkyu;Alshareef, H. N.;
10:1:1:68 Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs
DOI:10.1021/am503872t JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:8 AU: Branquinho, Rita;Salgueiro, Daniela;Santos, Lidia;Barquinha, Pedro;Pereira, Luis;Martins, Rodrigo;Fortunato, Elvira;
10:1:1:69 Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors
DOI:10.1039/c4tc00874j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:8 AU: Bae, Eun Jin;Kang, Young Hun;Han, Mijeong;Lee, Changjin;Cho, Song Yun;
10:1:1:70 Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2 Gel-like Precursors
DOI:10.1002/adma.201202997 JN:ADVANCED MATERIALS PY:2013
TC:22 AU: Jang, Jaewon;Kitsomboonloha, Rungrot;Swisher, Sarah L.;Park, Eung Seok;Kang, Hongki;Subramanian, Vivek;
10:1:1:71 High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing
DOI:10.1063/1.4804993 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Su, Bo-Yuan;Chu, Sheng-Yuan;Juang, Yung-Der;Chen, Han-Chang;
10:1:1:72 Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors
DOI:10.1002/adfm.201400588 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:6 AU: Lee, Eungkyu;Ko, Jieun;Lim, Keon-Hee;Kim, Kyongjun;Park, Si Yun;Myoung, Jae M.;Kim, Youn Sang;
10:1:1:73 Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors
DOI:10.1016/j.apsusc.2014.05.217 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Yoo, Sungmi;Yoon, Jun-Young;Ryu, Juwhan;Kim, Yun Ho;Ka, Jae-Won;Yi, Mi Hye;Jang, Kwang-Suk;
10:1:1:74 High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process
DOI:10.1021/la304581c JN:LANGMUIR PY:2013
TC:9 AU: Zhao, Yunlong;Duan, Lian;Dong, Guifang;Zhang, Deqiang;Qiao, Juan;Wan, Liduo;Qiu, Yong;
10:1:1:75 Flexible a-IZO thin film transistors fabricated by solution processes
DOI:10.1016/j.jallcom.2010.06.166 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Cheng, Hua-Chi;Tsay, Chien-Yie;
10:1:1:76 A Facile Solution-Doping Method to Improve a LowTemperature Zinc Oxide Precursor: Towards Low-Cost Electronics on Plastic Foil
DOI:10.1002/adfm.201303461 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Weber, Dennis;Botnaras, Silviu;Duy Vu Pham;Merkulov, Alexey;Steiger, Juergen;Schmechel, Roland;De Cola, Luisa;
10:1:1:77 Structure, Sodium Ion Role, and Practical Issues for beta-alumina as a High-k Solution-Processed Gate Layer for Transparent and Low-Voltage Electronics
DOI:10.1021/am2009103 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:13 AU: Zhang, Bo;Liu, Yu;Agarwal, Shweta;Yeh, Ming-Ling;Katz, Howard E.;
10:1:1:78 Influences of pH and Ligand Type on the Performance of Inorganic Aqueous Precursor-Derived ZnO Thin Film Transistors
DOI:10.1021/am101131n JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:13 AU: Jun, Taehwan;Jung, Yangho;Song, Keunkyu;Moon, Jooho;
10:1:1:79 Direct Light Pattern Integration of Low-Temperature Solution-Processed All-Oxide Flexible Electronics
DOI:10.1021/nn504420r JN:ACS NANO PY:2014
TC:6 AU: Rim, You Seung;Chen, Huajun;Liu, Yongsheng;Bae, Sang-Hoon;Kim, Hyun Jae;Yang, Yang;
10:1:1:80 Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing
DOI:10.1063/1.4895830 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Leppaniemi, J.;Ojanpera, K.;Kololuoma, T.;Huttunen, O. -H.;Dahl, J.;Tuominen, M.;Laukkanen, P.;Majumdar, H.;Alastalo, A.;
10:1:1:81 Base-etch removal of a ligand shell in thin films of ZnO nanoparticles for electronic applications
DOI:10.1039/c3tc31059k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Weber, Dennis;Sharma, Richa;Botnaras, Silviu;Duy Vu Pham;Steiger, Juergen;De Cola, Luisa;
10:1:1:82 Low temperature deposition of ZnO semiconductor thin films on a PEN substrate by a solution process
DOI:10.1007/s13391-013-0004-6 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:0 AU: Tsay, Chien-Yie;Wu, Pei-Wen;
10:1:1:83 Synthesis of Stannyl-Substituted Zn4O4 Cubanes as Single-Source Precursors for Amorphous Tin-Doped ZnO and Zn2SnO4 Nanocrystals and Their Potential for Thin Film Field Effect Transistor Applications
DOI:10.1021/cm200282w JN:CHEMISTRY OF MATERIALS PY:2011
TC:18 AU: Tsaroucha, Marianna;Aksu, Yilmaz;Irran, Elisabeth;Driess, Matthias;
10:1:1:84 Enhanced Performance of Solution-Processed Amorphous LiTlnZnO Thin-Film Transistors
DOI:10.1021/am201701v JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:16 AU: Koo, Chang Young;Song, Keunkyu;Jung, Yangho;Yang, Wooseok;Kim, Seung-Hyun;Jeong, Sunho;Moon, Jooho;
10:1:1:85 Accelerated Formation of Metal Oxide Thin Film at 200 degrees C Using Oxygen Supplied by a Nitric Acid Additive and Residual Organic Suction Vacuum Annealing for Thin-Film Transistor Applications
DOI:10.1021/am4022818 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:5 AU: Jeong, Woong Hee;Kim, Dong Lim;Kim, Hyun Jae;
10:1:1:86 Impact of UV/O-3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors
DOI:10.1063/1.4804667 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Umeda, Kenichi;Miyasako, Takaaki;Sugiyama, Ayumu;Tanaka, Atsushi;Suzuki, Masayuki;Tokumitsu, Eisuke;Shimoda, Tatsuya;
10:1:1:87 Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors
DOI:10.1063/1.4893470 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Jeong, Yesul;Pearson, Christopher;Lee, Yong Uk;Ahn, Kyun;Cho, Chae-Ryong;Hwang, Jaeeun;Kim, Hongdoo;Do, Lee-Mi;Petty, Michael C.;
10:1:1:88 Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis
DOI:10.1007/s11664-014-3342-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Jeong, Yesul;Pearson, Christopher;Lee, Yong Uk;Winchester, Lee;Hwang, Jaeeun;Kim, Hongdoo;Do, Lee-Mi;Petty, Michael C.;
10:1:1:89 Functionalized ZnO nanoparticles for thin-film transistors: support of ligand removal by non-thermal methods
DOI:10.1039/c3tc00576c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Weber, Dennis;Botnaras, Silviu;Duy Vu Pham;Steiger, Juergen;De Cola, Luisa;
10:1:1:90 Photonic curing of sol-gel derived HfO2 dielectrics for organic field-effect transistors
DOI:10.1016/j.ceramint.2014.07.099 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Tetzner, Kornelius;Schroder, Kurt A.;Bock, Karlheinz;
10:1:1:91 Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition
DOI:10.1016/j.apsusc.2014.02.080 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Jeon, Hye-ji;Lee, Seul-Gi;Kim, H.;Park, Jin-Seong;
10:1:1:92 Low-temperature soluble InZnO thin film transistors by microwave annealing
DOI:10.1016/j.jcrysgro.2011.01.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Song, Keunkyu;Moo, Chang Young;Jun, Taehwan;Lee, Daehee;Jeong, Youngmin;Moon, Jooho;
10:1:1:93 Low voltage operated, sol-gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric
DOI:10.1016/j.matchemphys.2012.11.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Choi, Sungho;Park, Byung-Yoon;Jeong, Sunho;Lee, Ji-Yoon;Ryu, Beyong-Hwan;Jung, Ha-Kyun;
10:1:1:94 Effects of Solution Temperature on Solution-Processed High-Performance Metal Oxide Thin-Film Transistors
DOI:10.1021/am3032629 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:14 AU: Lee, Keun Ho;Park, Jee Ho;Yoo, Young Bum;Jang, Woo Soon;Oh, Jin Young;Chae, Soo Sang;Moon, Kyeong Ju;Myoung, Jae Min;Baik, Hong Koo;
10:1:1:95 Influence of annealing atmospheres and synthetic air treatment on solution processed zinc oxide thin film transistors
DOI:10.1063/1.4742976 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Busch, C.;Schierning, G.;Theissmann, R.;Schmechel, R.;
10:1:1:96 Effect Of Channel Layer Thickness On The Performance Of Indium-Zinc-Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing
DOI:10.1021/am501153w JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Avis, Christophe;Hwang, Hye Rim;Jang, Jin;
10:1:1:97 Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates
DOI:10.1039/c2tc00481j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:14 AU: Yoo, Young Bum;Park, Jee Ho;Lee, Kuen Ho;Lee, Hyun Woo;Song, Kie Moon;Lee, Se Jong;Baik, Hong Koo;
10:1:1:98 High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors
DOI:10.1016/j.tsf.2013.11.061 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Oertel, Susanne;Jank, Michael P. M.;Teuber, Erik;Bauer, Anton J.;Frey, Lothar;
10:1:1:99 Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV/O-3-assisted annealing
DOI:10.1063/1.4739052 JN:AIP ADVANCES PY:2012
TC:7 AU: Lu, Li;Echizen, Masahiro;Nishida, Takashi;Ishikawa, Yasuaki;Uchiyama, Kiyoshi;Uraoka, Yukiharu;
10:1:1:100 Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation
DOI:10.1116/1.4898115 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Park, Sukhyung;Cho, Kyoungah;Yang, Kyungwhan;Kim, Sangsig;
10:1:1:101 All-solution-processed, transparent thin-film transistors based on metal oxides and single-walled carbon nanotubes
DOI:10.1039/c2tc00405d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Park, Jee Ho;Lee, Su Jeong;Lee, Tae Il;Kim, Jung Han;Kim, Chul-Hong;Chae, Gee Sung;Ham, Moon-Ho;Baik, Hong Koo;Myoung, Jae-Min;
10:1:1:102 Solution-processed zinc-indium-tin oxide thin-film transistors for flat-panel displays
DOI:10.1063/1.4818724 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Kim, Bo Sung;Jeong, Yeon Taek;Lee, Doohyoung;Choi, TaeYoung;Jung, Seung-Ho;Choi, June Whan;Yang, Chanwoo;Jo, Kangmoon;Lee, Byung-Ju;Park, Eunhye;Kim, Doo Na;Kim, Youngmin;Shin, Sungtae;
10:1:1:103 High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps
DOI:10.1063/1.3492852 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Zhang, H. Z.;Liang, L. Y.;Chen, A. H.;Liu, Z. M.;Yu, Z.;Cao, H. T.;Wan, Q.;
10:1:1:104 Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
DOI:10.1063/1.4902867 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jo, Kwang-Won;Cho, Won-Ju;
10:1:1:105 Synthesis of hierarchy ZnO by a template-free method and its photocatalytic activity
DOI:10.1016/j.matchemphys.2010.01.031 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:9 AU: Zhao, Bin;Wang, Chun-Ling;Chen, Yu-Wen;Chen, Hui-Lan;
10:1:1:106 Effects of post-annealing on electrical properties of amorphous Ga-doped Zn-Sn-O semiconductor films
DOI:10.1016/j.jnoncrysol.2012.06.009 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Kim, Dong-Ho;Kim, Hye-Ri;Kwon, Jung-Dae;Lee, Gun-Hwan;Park, Juyun;Kang, Yong-Cheol;
10:1:1:107 Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition
DOI:10.1116/1.4762800 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:5 AU: Wan, Runlai;Yang, Ming;Zhou, Qianfei;Zhang, Qun;
10:1:1:108 A study on the microstructural and chemical evolution of In-Ga-Zn-O sol-gel films and the effects on the electrical properties
DOI:10.1016/j.tsf.2013.05.110 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Jeon, Haseok;Song, Jury;Na, Sekwon;Moon, Miran;Lim, Junhyung;Joo, Jinho;Jung, Donggun;Kim, Hyungsub;Noh, Jinsoo;Lee, Hoo-Jeong;
10:1:1:109 Structure, Sodium Ion Role, and Practical Issues for beta-alumina as a High-k Solution-Processed Gate Layer for Transparent and Low-Voltage Electronics (vol 3, pg 4254, 2011)
DOI:10.1021/am502139y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Zhang, Bo;Liu, Yu;Agarwala, Shweta;Yeh, Mingling;Katz, Howard E.;
10:1:1:110 Fabrication of ZnO-Based Flexible Thin-Film Transistors by a Low-Temperature Process
DOI:10.1080/15421406.2011.599743 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2011
TC:3 AU: Yang, Jin Woo;Hyung, Gun Woo;Lee, Ho Won;Park, Jae-Hoon;Koo, Ja Ryong;Jung, Kyung Seo;Cho, Eou Sik;Kwon, Sang Jik;Kim, Young Kwan;
10:1:1:111 High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 degrees C (vol 25, pg 4340, 2013)
DOI:10.1002/adma.201303701 JN:ADVANCED MATERIALS PY:2013
TC:0 AU: Lin, Yen-Hung;Faber, Hendrik;Zhao, Kui;Wang, Qingxiao;Amassian, Aram;McLachlan, Martyn;Anthopoulos, Thomas D.;
10:1:1:112 Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering
DOI:10.1116/1.3571760 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Huh, Myung Soo;Won, Seok-Jun;Yang, Bong Seob;Oh, Seungha;Oh, Myeong Sook;Jeong, Jae Kyeong;Kim, Hyeong Joon;
10:1:1:113 P-type conductive amorphous oxides of transition metals from solution processing
DOI:10.1063/1.4739936 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Li, Jinwang;Kaneda, Toshihiko;Tokumitsu, Eisuke;Koyano, Mikio;Mitani, Tadaoki;Shimoda, Tatsuya;
10:1:1:114 Processing-phase diagrams: a new tool for solution-deposited thin-film development applied to the In5O(OPri)(13)-In2O3 system
DOI:10.1039/c3tc31930j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Pasquarelli, Robert M.;van Hest, Maikel F. A. M.;Parilla, Philip A.;Perkins, John D.;O'Hayre, Ryan;Ginley, David S.;
10:1:1:115 Polymeric Acrylate-Based Hybrid Films Containing Lead and Iron Patterned by UV Photo-Polymerization
DOI:10.1021/la902195k JN:LANGMUIR PY:2010
TC:3 AU: Han, Huilan;Bissell, John;Yaghmaie, Frank;Davis, Cristina E.;
10:1:2:1 O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
DOI:10.1063/1.3464964 JN:APPLIED PHYSICS LETTERS PY:2010
TC:117 AU: Ryu, Byungki;Noh, Hyeon-Kyun;Choi, Eun-Ae;Chang, K. J.;
10:1:2:2 Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
DOI:10.1103/PhysRevB.81.115311 JN:PHYSICAL REVIEW B PY:2010
TC:103 AU: Clark, S. J.;Robertson, J.;Lany, S.;Zunger, A.;
10:1:2:3 Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor
DOI:10.1063/1.3510471 JN:APPLIED PHYSICS LETTERS PY:2010
TC:86 AU: Oh, Himchan;Yoon, Sung-Min;Ryu, Min Ki;Hwang, Chi-Sun;Yang, Shinhyuk;Park, Sang-Hee Ko;
10:1:2:4 Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
DOI:10.1063/1.3564882 JN:APPLIED PHYSICS LETTERS PY:2011
TC:74 AU: Ji, Kwang Hwan;Kim, Ji-In;Jung, Hong Yoon;Park, Se Yeob;Choi, Rino;Kim, Un Ki;Hwang, Cheol Seong;Lee, Daeseok;Hwang, Hyungsang;Jeong, Jae Kyeong;
10:1:2:5 Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors
DOI:10.1063/1.3503971 JN:APPLIED PHYSICS LETTERS PY:2010
TC:67 AU: Chowdhury, Md Delwar Hossain;Migliorato, Piero;Jang, Jin;
10:1:2:6 Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
DOI:10.1103/PhysRevB.84.115205 JN:PHYSICAL REVIEW B PY:2011
TC:40 AU: Noh, Hyeon-Kyun;Chang, K. J.;Ryu, Byungki;Lee, Woo-Jin;
10:1:2:7 Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays
DOI:10.1557/jmr.2013.214 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:21 AU: Jeong, Jae Kyeong;
10:1:2:8 Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
DOI:10.1063/1.3560769 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:59 AU: Nomura, Kenji;Kamiya, Toshio;Ikenaga, Eiji;Yanagi, Hiroshi;Kobayashi, Keisuke;Hosono, Hideo;
10:1:2:9 Improvement of the photo-bias stability of the Zn-Sn-O field effect transistors by an ozone treatment
DOI:10.1039/c2jm30242j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:30 AU: Yang, Bong Seob;Park, Sanghyun;Oh, Seungha;Kim, Yoon Jang;Jeong, Jae Kyeong;Hwang, Cheol Seong;Kim, Hyeong Joon;
10:1:2:10 Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer
DOI:10.1063/1.3432445 JN:APPLIED PHYSICS LETTERS PY:2010
TC:60 AU: Yang, Shinhyuk;Cho, Doo-Hee;Ryu, Min Ki;Park, Sang-Hee Ko;Hwang, Chi-Sun;Jang, Jin;Jeong, Jae Kyeong;
10:1:2:11 Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors
DOI:10.1063/1.3571448 JN:APPLIED PHYSICS LETTERS PY:2011
TC:28 AU: Yang, Bong Seob;Huh, Myung Soo;Oh, Seungha;Lee, Ung Soo;Kim, Yoon Jang;Oh, Myeong Sook;Jeong, Jae Kyeong;Hwang, Cheol Seong;Kim, Hyeong Joon;
10:1:2:12 Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment
DOI:10.1063/1.3634053 JN:APPLIED PHYSICS LETTERS PY:2011
TC:25 AU: Yang, Shinhyuk;Ji, Kwang Hwan;Kim, Un Ki;Hwang, Cheol Seong;Park, Sang-Hee Ko;Hwang, Chi-Sun;Jang, Jin;Jeong, Jae Kyeong;
10:1:2:13 Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor
DOI:10.1063/1.4752238 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Migliorato, Piero;Chowdhury, Md Delwar Hossain;Um, Jae Gwang;Seok, Manju;Jang, Jin;
10:1:2:14 Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor
DOI:10.1063/1.3540500 JN:APPLIED PHYSICS LETTERS PY:2011
TC:29 AU: Oh, Himchan;Yoon, Sung-Min;Ryu, Min Ki;Hwang, Chi-Sun;Yang, Shinhyuk;Park, Sang-Hee Ko;
10:1:2:15 Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
DOI:10.1063/1.4751849 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Um, Jae Gwang;Mativenga, Mallory;Migliorato, Piero;Jang, Jin;
10:1:2:16 Light induced instability mechanism in amorphous InGaZn oxide semiconductors
DOI:10.1063/1.4872227 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Robertson, John;Guo, Yuzheng;
10:1:2:17 Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
DOI:10.1063/1.3580611 JN:APPLIED PHYSICS LETTERS PY:2011
TC:31 AU: Chowdhury, Md Delwar Hossain;Migliorato, Piero;Jang, Jin;
10:1:2:18 Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress
DOI:10.1063/1.4813747 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Um, Jae Gwang;Mativenga, Mallory;Jang, Jin;
10:1:2:19 Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
DOI:10.1063/1.4752727 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Heo, Jaeyeong;Kim, Sang Bok;Gordon, Roy G.;
10:1:2:20 Effect of sputter power on the photobias stability of zinc-tin-oxide field-effect transistors
DOI:10.1116/1.4832329 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:3 AU: Yang, Bong Seob;Oh, Seungha;Kim, Yoon Jang;Han, Sang Jin;Lee, Hong Woo;Kim, Hyuk Jin;Park, Hui Kyung;Jeong, Jae Kyeong;Heo, Jaeyeong;Hwang, Cheol Seong;Kim, Hyeong Joon;
10:1:2:21 The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor
DOI:10.1063/1.3513400 JN:APPLIED PHYSICS LETTERS PY:2010
TC:43 AU: Kwon, Jang-Yeon;Jung, Ji Sim;Son, Kyoung Seok;Lee, Kwang-Hee;Park, Joon Seok;Kim, Tae Sang;Park, Jin-Seong;Choi, Rino;Jeong, Jae Kyeong;Koo, Bonwon;Lee, Sang Yoon;
10:1:2:22 Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors
DOI:10.1063/1.4803706 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Noh, Ji-Young;Kim, Hanchul;Nahm, Ho-Hyun;Kim, Yong-Sung;Kim, Dae Hwan;Ahn, Byung-Du;Lim, Jun-Hyung;Kim, Gun Hee;Lee, Je-Hun;Song, Junho;
10:1:2:23 Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
DOI:10.1063/1.3622121 JN:APPLIED PHYSICS LETTERS PY:2011
TC:42 AU: Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo;
10:1:2:24 Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors
DOI:10.1063/1.4801762 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Chowdhury, Md Delwar Hossain;Migliorato, Piero;Jang, Jin;
10:1:2:25 Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In-Ga-Zn-O thin film transistors under light illumination
DOI:10.1063/1.3597299 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Kim, Jeong Hwan;Kim, Un Ki;Chung, Yoon Jang;Hwang, Cheol Seong;
10:1:2:26 Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
DOI:10.1063/1.3633100 JN:APPLIED PHYSICS LETTERS PY:2011
TC:34 AU: Ide, Keisuke;Kikuchi, Yutomo;Nomura, Kenji;Kimura, Mutsumi;Kamiya, Toshio;Hosono, Hideo;
10:1:2:27 Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4
DOI:10.1038/am.2014.103 JN:NPG ASIA MATERIALS PY:2014
TC:1 AU: Nahm, Ho-Hyun;Kim, Yong-Sung;
10:1:2:28 Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material
DOI:10.1063/1.3610476 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Oh, Himchan;Park, Sang-Hee Ko;Hwang, Chi-Sun;Yang, Shinhyuk;Ryu, Min Ki;
10:1:2:29 The impact of orbital hybridization on the electronic structure of crystalline InGaZnO: a new perspective on the compositional dependence
DOI:10.1039/c4tc01529k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Kang, Youngho;Lee, Sanghyun;Sim, Hasung;Sohn, Chang Hee;Park, Won Goo;Song, Seul Ji;Kim, Un Ki;Hwang, Cheol Seong;Han, Seungwu;Cho, Deok-Yong;
10:1:2:30 Study on the defects in metal-organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis
DOI:10.1039/c3tc31323a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Kim, Un Ki;Rha, Sang Ho;Kim, Jeong Hwan;Chung, Yoon Jang;Jung, Jisim;Hwang, Eun Suk;Lee, Joohwi;Park, Tae Joo;Choi, Jung-Hae;Hwang, Cheol Seong;
10:1:2:31 Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation
DOI:10.1063/1.4892541 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: An, Sungjin;Mativenga, Mallory;Kim, Youngoo;Jang, Jin;
10:1:2:32 Thermodynamic stability of various phases of zinc tin oxides from ab initio calculations
DOI:10.1039/c3tc30960f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:9 AU: Lee, Joohwi;Lee, Seung-Cheol;Hwang, Cheol Seong;Choi, Jung-Hae;
10:1:2:33 Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach
DOI:10.1063/1.4748884 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Oh, Seungha;Yang, Bong Seob;Kim, Yoon Jang;Oh, Myeong Sook;Jang, Mi;Yang, Hoichang;Jeong, Jae Kyeong;Hwang, Cheol Seong;Kim, Hyeong Joon;
10:1:2:34 Impact of the Cation Composition on the Electrical Performance of Solution-Processed Zinc Tin Oxide Thin-Film Transistors
DOI:10.1021/am503351e JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Kim, Yoon Jang;Oh, Seungha;Yang, Bong Seob;Han, Sang Jin;Lee, Hong Woo;Kim, Hyuk Jin;Jeong, Jae Kyeong;Hwang, Cheol Seong;Kim, Hyeong Joon;
10:1:2:35 Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors
DOI:10.1063/1.3662869 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Chowdhury, Md Delwar Hossain;Ryu, Sang Hyun;Migliorato, Piero;Jang, Jin;
10:1:2:36 Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress
DOI:10.1063/1.3679109 JN:APPLIED PHYSICS LETTERS PY:2012
TC:18 AU: Choi, Sung-Hwan;Han, Min-Koo;
10:1:2:37 Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide
DOI:10.1063/1.3685705 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Migliorato, Piero;Seok, Manju;Jang, Jin;
10:1:2:38 Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K
DOI:10.1063/1.4824875 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Chowdhury, Md Delwar Hossain;Migliorato, Piero;Jang, Jin;
10:1:2:39 Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
DOI:10.1063/1.4801436 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Rim, You Seung;Jeong, Wooho;Ahn, Byung Du;Kim, Hyun Jae;
10:1:2:40 Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
DOI:10.1063/1.4890579 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Liu, Li-Chih;Chen, Jen-Sue;Jeng, Jiann-Shing;
10:1:2:41 Investigation of tow-step electrical degradation behavior in a-InGaZnO thin-film transistors with Sm2O3 gate dielectrics
DOI:10.1063/1.4816057 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Chen, Fa-Hsyang;Her, Jim-Long;Hung, Meng-Ning;Pan, Tung-Ming;
10:1:2:42 Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 degrees C
DOI:10.1063/1.4903874 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chowdhury, Md Delwar Hossain;Um, Jae Gwang;Jang, Jin;
10:1:2:43 Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
DOI:10.1063/1.4717621 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Rha, Sang Ho;Jung, Jisim;Jung, Yoon Soo;Chung, Yoon Jang;Kim, Un Ki;Hwang, Eun Suk;Park, Byoung Keon;Park, Tae Joo;Choi, Jung-Hae;Hwang, Cheol Seong;
10:1:2:44 Ab initio study on the structural characteristics of amorphous Zn2SnO4
DOI:10.1063/1.4850895 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Lee, Joohwi;Kang, Youngho;Han, Seungwu;Hwang, Cheol Seong;Choi, Jung-Hae;
10:1:2:45 Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films
DOI:10.1063/1.4811788 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Lee, Joohwi;Cho, Deok-Yong;Jung, Jisim;Kim, Un Ki;Rha, Sang Ho;Hwang, Cheol Seong;Choi, Jung-Hae;
10:1:2:46 X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films
DOI:10.1063/1.4884115 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Siah, Sin Cheng;Lee, Sang Woon;Lee, Yun Seog;Heo, Jaeyeong;Shibata, Tomohiro;Segre, Carlo U.;Gordon, Roy G.;Buonassisi, Tonio;
10:1:2:47 Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn2SnO4
DOI:10.1039/c4tc01366b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Lee, Joohwi;Kang, Youngho;Hwang, Cheol Seong;Han, Seungwu;Lee, Seung-Cheol;Choi, Jung-Hae;
10:1:2:48 Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination
DOI:10.1063/1.4729478 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Huang, Xiaoming;Wu, Chenfei;Lu, Hai;Ren, Fangfang;Xu, Qingyu;Ou, Huiling;Zhang, Rong;Zheng, Youdou;
10:1:2:49 Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability
DOI:10.1063/1.4801931 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Nahm, Ho-Hyun;Kim, Yong-Sung;
10:1:2:50 Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping
DOI:10.1063/1.4816587 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Park, Si Hyung;Mativenga, Mallory;Jang, Jin;
10:1:2:51 Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors
DOI:10.1063/1.4889856 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chung, Yoon Jang;Kim, Un Ki;Hwang, Eun Suk;Hwang, Cheol Seong;
10:1:2:52 Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics
DOI:10.1063/1.4899189 JN:AIP ADVANCES PY:2014
TC:0 AU: Ha, Tae-Jun;
10:1:2:53 Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths
DOI:10.1063/1.3641473 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Mativenga, Mallory;Seok, Manju;Jang, Jin;
10:1:2:54 Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen
DOI:10.1063/1.4883257 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Sallis, S.;Butler, K. T.;Quackenbush, N. F.;Williams, D. S.;Junda, M.;Fischer, D. A.;Woicik, J. C.;Podraza, N. J.;White, B. E., Jr.;Walsh, A.;Piper, L. F. J.;
10:1:2:55 Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures
DOI:10.1063/1.4742853 JN:AIP ADVANCES PY:2012
TC:4 AU: Mativenga, Mallory;Hwang, Tae-Ha;Jang, Jin;
10:1:2:56 High current stress effects in amorphous-InGaZnO4 thin-film transistors
DOI:10.1063/1.4775694 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Mativenga, Mallory;Hong, Sejin;Jang, Jin;
10:1:2:57 Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
DOI:10.1063/1.3699372 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:18 AU: Ide, Keisuke;Nomura, Kenji;Hiramatsu, Hidenori;Kamiya, Toshio;Hosono, Hideo;
10:1:2:58 The recovery mechanism of the light-induced instability of the amorphous InGaZnO thin film transistors
DOI:10.1063/1.4721517 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Wang, Chao-Lung;Cheng, Huang-Chung;Wu, Chun-Yu;Lee, I-Che;Cheng, Yu-Ting;Yang, Po-Yu;Tsai, Chih-Hung;Fang, Chun-Hsiang;Lee, Chung-Chun;
10:1:2:59 Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors
DOI:10.1063/1.4891541 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Jo, Jeong-Wan;Kim, Yong-Hoon;Park, Sung Kyu;
10:1:2:60 Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature
DOI:10.1063/1.4870458 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Um, Jae Gwang;Mativenga, Mallory;Migliorato, Piero;Jang, Jin;
10:1:2:61 Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics
DOI:10.1002/adfm.201304114 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Chang, Seongpil;Do, Yun Seon;Kim, Jong-Woo;Hwang, Bo Yeon;Choi, Jinnil;Choi, Byung-Hyun;Lee, Yun-Hi;Choi, Kyung Cheol;Ju, Byeong-Kwon;
10:1:2:62 The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination
DOI:10.1063/1.3541783 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Kim, Jeong Hwan;Kim, Un Ki;Chung, Yoon Jang;Jung, Ji Sim;Ra, Sang Ho;Jung, Hyung Suk;Hwang, Cheol Seong;Jeong, Jae Kyeong;Lee, Sang Yoon;
10:1:2:63 Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies
DOI:10.1063/1.4794419 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Son, Kyoung-Seok;Park, Joon Seok;Kim, Tae Sang;Kim, Hyun-Suk;Seo, Seok-Jun;Kim, Sun-Jae;Seon, Jong Baek;Ji, Kwang Hwan;Jeong, Jae Kyeong;Ryu, Myung Kwan;Lee, Sangyoon;
10:1:2:64 Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-Othin-film-transistors
DOI:10.1063/1.4792229 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:16 AU: Noh, Hyeon-Kyun;Park, Ji-Sang;Chang, K. J.;
10:1:2:65 Origin of major donor states in In-Ga-Zn oxide
DOI:10.1063/1.4902859 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Nakashima, Motoki;Oota, Masashi;Ishihara, Noritaka;Nonaka, Yusuke;Hirohashi, Takuya;Takahashi, Masahiro;Yamazaki, Shunpei;Obonai, Toshimitsu;Hosaka, Yasuharu;Koezuka, Junichi;
10:1:2:66 Investigation of co-sputtered LiZnSnO thin film transistors
DOI:10.1016/j.tsf.2012.08.009 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Jung, Hong Yoon;Park, Se Yeob;Kim, Ji-In;Yang, Hoichang;Choi, Rino;Kim, Dae-Hwan;Bae, Jong-Uk;Shin, Woo-Sup;Jeong, Jae Kyeong;
10:1:2:67 Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology
DOI:10.1063/1.4896948 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Yamada, Kazuo;Nomura, Kenji;Abe, Katsumi;Takeda, Satoshi;Hosono, Hideo;
10:1:2:68 The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination
DOI:10.1063/1.3536479 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Park, Joon Seok;Kim, Tae Sang;Son, Kyoung Seok;Maeng, Wan-Joo;Kim, Hyun-Suk;Ryu, Myungkwan;Lee, Sang Yoon;
10:1:2:69 Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks
DOI:10.1063/1.4868387 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Chen, Sun;Zhang, Wen-Peng;Cui, Xing-Mei;Ding, Shi-Jin;Sun, Qing-Qing;Zhang, Wei;
10:1:2:70 Improvement of bias stability of oxyanion-incorporated aqueous sol-gel processed indium zinc oxide TFTs
DOI:10.1039/c4tc00667d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Park, Hyungjin;Nam, YunYong;Jin, Jungho;Bae, Byeong-Soo;
10:1:2:71 Development of annealing process for solution-derived high performance InGaZnO thin-film transistors
DOI:10.1016/j.mseb.2013.04.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:5 AU: Kim, Kwan-Soo;Lee, Se-Won;Oh, Se-Man;Cho, Won-Ju;
10:1:2:72 The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure
DOI:10.1063/1.4767996 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Chen, Yu-Chun;Chang, Ting-Chang;Li, Hung-Wei;Hsieh, Tien-Yu;Chen, Te-Chih;Wu, Chang-Pei;Chou, Cheng-Hsu;Chung, Wang-Cheng;Chang, Jung-Fang;Tai, Ya-Hsiang;
10:1:2:73 Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness
DOI:10.1063/1.3679522 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Chung, Yoon Jang;Kim, Jeong Hwan;Kim, Un Ki;Rha, Sang Ho;Hwang, Eric;Hwang, Cheol Seong;
10:1:2:74 Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition
DOI:10.1063/1.4821365 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Oh, Himchan;Hwang, Chi-Sun;Pi, Jae-Eun;Ryu, Min Ki;Park, Sang-Hee Ko;Chu, Hye Yong;
10:1:2:75 Electrical property relaxation characteristics of UV-treated ZnO-based thin film transistors
DOI:10.1016/j.tsf.2012.11.057 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Jin, Sun Moon;Cho, Nam-Ihn;Yun, Eui-Jung;Nam, Hyoung Gin;
10:1:2:76 Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors
DOI:10.1063/1.3606538 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Kim, Jang Hyun;Kwon, Dae Woong;Chang, Ji Soo;Kim, Sang Wan;Park, Jae Chul;Kim, Chang Jung;Park, Byung-Gook;
10:1:2:77 Comparison of structural and electrical properties of Lu2O3 and Lu2TiO5 gate dielectrics for alpha-InGaZnO thin-film transistors
DOI:10.1063/1.4902518 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Pan, Tung-Ming;Chen, Ching-Hung;Her, Jim-Long;Koyama, Keiichi;
10:1:2:78 Influence of plasma treatment on optical and electrical properties of a-InGaZnO films
DOI:10.1116/1.4798297 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Li Xifeng;Xin Enlong;Shi Jifeng;Li Chunya;Zhang Jianhua;
10:1:2:79 Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature
DOI:10.1063/1.3429586 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Seo, Hyungtak;Cho, Young-Je;Kim, Jinwoo;Bobade, Santosh M.;Park, Kyoung-Youn;Lee, Jaegab;Choi, Duck-Kyun;
10:1:2:80 Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias
DOI:10.1063/1.4830368 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Liu, P.;Chen, T. P.;Li, X. D.;Liu, Z.;Wong, J. I.;Liu, Y.;Leong, K. C.;
10:1:2:81 Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors
DOI:10.1063/1.4898069 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jang, Jaeman;Kim, Dae Geun;Kim, Dong Myong;Choi, Sung-Jin;Lim, Jun-Hyung;Lee, Je-Hun;Kim, Yong-Sung;Ahn, Byung Du;Kim, Dae Hwan;
10:1:2:82 Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer
DOI:10.1116/1.4827276 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Rha, Sang Ho;Kim, Un Ki;Jung, Jisim;Hwang, Eun Suk;Lee, Seung Jun;Jean, Woojin;Yoo, Yeon Woo;Choi, Jung-Hae;Hwang, Cheol Seong;
10:1:2:83 Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor
DOI:10.1016/j.tsf.2011.01.400 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Huh, Jun-Young;Jeon, Jae-Hong;Choe, Hee-Hwan;Lee, Kang-Woong;Seo, Jong-Huyn;Ryu, Min-Ki;Park, Sang-Hee Ko;Hwang, Chi-Sun;Cheong, Woo-Seok;
10:1:2:84 Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor
DOI:10.1063/1.4827955 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Rha, Sang Ho;Kim, Un Ki;Jung, Jisim;Hwang, Eun Suk;Choi, Jung-Hae;Hwang, Cheol Seong;
10:1:2:85 Transparent Al-In-Zn-O Oxide semiconducting films with various in composition for thin-film transistor applications
DOI:10.1016/j.ceramint.2012.09.016 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Bak, Jun Yong;Yang, Shinhyuk;Yoon, Sung Min;
10:1:2:86 Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer
DOI:10.1016/j.tsf.2011.07.015 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Kim, Woong-Sun;Moon, Yeon-Keon;Kim, Kyung-Taek;Shin, Sae-Young;Park, Jong-Wan;
10:1:2:87 Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor
DOI:10.1016/j.tsf.2012.12.109 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Seo, Seung-Bum;Park, Han-Sung;Jeon, Jae-Hong;Choe, Hee-Hwan;Seo, Jong-Hyun;Yang, Shinhyuk;Park, Sang-Hee Ko;
10:1:2:88 Density of trap states measured by photon probe into ZnO based thin-film transistors
DOI:10.1063/1.3483763 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Lee, Kimoon;Ko, Gunwoo;Lee, Gun Hwan;Han, Gi Bok;Sung, Myung M.;Ha, Tae Woo;Kim, Jae Hoon;Im, Seongil;
10:1:2:89 The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
DOI:10.1063/1.4711202 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Jung, Ji Sim;Rha, Sang-Ho;Kim, Un Ki;Chung, Yoon Jang;Jung, Yoon Soo;Choi, Jung-Hae;Hwang, Cheol Seong;
10:1:3:1 Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor
DOI:10.1557/jmr.2014.187 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:3 AU: Parthiban, Shanmugam;Kwon, Jang-Yeon;
10:1:3:2 Oxygen "Getter" Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors
DOI:10.1021/ja403586x JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:21 AU: Hennek, Jonathan W.;Smith, Jeremy;Yan, Aiming;Kim, Myung-Gil;Zhao, Wei;Dravid, Vinayak P.;Facchetti, Antonio;Marks, Tobin J.;
10:1:3:3 Review Paper: Transparent Amorphous Oxide Semiconductor Thin Film Transistor
DOI:10.1007/s13391-011-0301-x JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:88 AU: Kwon, Jang-Yeon;Lee, Do-Joong;Kim, Ki-Bum;
10:1:3:4 High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
DOI:10.1063/1.3387819 JN:APPLIED PHYSICS LETTERS PY:2010
TC:62 AU: Chong, Eugene;Jo, Kyoung Chul;Lee, Sang Yeol;
10:1:3:5 Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors
DOI:10.1063/1.3413939 JN:APPLIED PHYSICS LETTERS PY:2010
TC:59 AU: Kim, Gun Hee;Jeong, Woong Hee;Du Ahn, Byung;Shin, Hyun Soo;Kim, Hee Jin;Kim, Hyun Jae;Ryu, Myung-Kwan;Park, Kyung-Bae;Seon, Jong-Baek;Lee, Sang-Yoon;
10:1:3:6 Effect of Zr addition on ZnSnO thin-film transistors using a solution process
DOI:10.1063/1.3524514 JN:APPLIED PHYSICS LETTERS PY:2010
TC:49 AU: Rim, You Seung;Kim, Dong Lim;Jeong, Woong Hee;Kim, Hyun Jae;
10:1:3:7 Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
DOI:10.1063/1.3340943 JN:APPLIED PHYSICS LETTERS PY:2010
TC:55 AU: Jeong, Woong Hee;Kim, Gun Hee;Shin, Hyun Soo;Du Ahn, Byung;Kim, Hyun Jae;Ryu, Myung-Kwan;Park, Kyung-Bae;Seon, Jong-Baek;Lee, Sang Yoon;
10:1:3:8 Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers
DOI:10.1002/adma.201002397 JN:ADVANCED MATERIALS PY:2010
TC:52 AU: Park, Jae Chul;Kim, Sangwook;Kim, Sunil;Kim, Changjung;Song, Ihun;Park, Youngsoo;Jung, U-In;Kim, Dae Hwan;Lee, Jang-Sik;
10:1:3:9 Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors
DOI:10.1021/am900787k JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:50 AU: Jeong, Youngmin;Bae, Changdeuck;Kim, Dongjo;Song, Keunkyu;Woo, Kyoohee;Shin, Hyunjung;Cao, Guozhong;Moon, Jooho;
10:1:3:10 High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors
DOI:10.1021/cm4035837 JN:CHEMISTRY OF MATERIALS PY:2014
TC:15 AU: Banger, Kulbinder K.;Peterson, Rebecca L.;Mori, Kiyotaka;Yamashita, Yoshihisa;Leedham, Timothy;Sirringhaus, Henning;
10:1:3:11 Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process
DOI:10.1021/am3008278 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:24 AU: Kim, Deuk Jong;Kim, Dong Lim;Rim, You Seung;Kim, Chul Ho;Jeong, Woong Hee;Lim, Hyun Soo;Kim, Hyun Jae;
10:1:3:12 Simple Method to Enhance Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer
DOI:10.1021/am5063212 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Park, Ji Hoon;Kim, Yeong-gyu;Yoon, Seokhyun;Hong, Seonghwan;Kim, Hyun Jae;
10:1:3:13 The structural, optical and electrical characterizatio of high-performance, low-temperature and solution-processed alkali metal-doped ZnO TFTs
DOI:10.1039/c2tc00559j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:9 AU: Park, Si Yun;Kim, Kyongjun;Lim, Keon-Hee;Kim, Beom Joon;Lee, Eungkyu;Cho, Jeong Ho;Kim, Youn Sang;
10:1:3:14 Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In-Ga-Zn-O Thin-Film Transistors
DOI:10.1021/am405818x JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Tak, Young Jun;Yoon, Doo Hyun;Yoon, Seokhyun;Choi, Uy Hyun;Sabri, Mardhiah Muhamad;Ahn, Byung Du;Kim, Hyun Jae;
10:1:3:15 Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process
DOI:10.1557/jmr.2012.138 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:4 AU: Do, Jong Chil;Kim, Ho Beom;Ahn, Cheol Hyoun;Cho, Hyung Koun;Lee, Ho Seong;
10:1:3:16 Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc -Tin-Oxide/Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using a Solution Process
DOI:10.1021/am400943z JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Kim, Chul Ho;Rim, You Seung;Kim, Hyun Jae;
10:1:3:17 Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors
DOI:10.1063/1.3503964 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Choi, Yuri;Kim, Gun Hee;Jeong, Woong Hee;Bae, Jung Hyeon;Kim, Hyun Jae;Hong, Jae-Min;Yu, Jae-Woong;
10:1:3:18 Improved Electrical Performance and Bias Stability of Solution-Processed Active Bilayer Structure of Indium Zinc Oxide based TFT
DOI:10.1021/am5037934 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Seo, Jin-Suk;Bae, Byeong-Soo;
10:1:3:19 The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors
DOI:10.1063/1.3506503 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Kim, Doo Na;Kim, Dong Lim;Kim, Gun Hee;Kim, Si Joon;Rim, You Seung;Jeong, Woong Hee;Kim, Hyun Jae;
10:1:3:20 Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
DOI:10.1063/1.3655197 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Chong, Ho Yong;Han, Kyu Wan;No, Young Soo;Kim, Tae Whan;
10:1:3:21 A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure
DOI:10.1016/j.tsf.2014.04.006 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Li, Jun;Zhang, Jian-Hua;Dinga, Xing-Wei;Zhu, Wen-Qing;Jiang, Xue-Yin;Zhang, Zhi-Lin;
10:1:3:22 Fabrication and electrical characterization of Li-N dual doped ZnO thin film transistor
DOI:10.1016/j.apsusc.2014.03.116 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Zhou, D. Z.;Li, B.;Wang, H. L.;Salik, M.;Wu, H. H.;Hu, Z. F.;Gao, S.;Peng, Y. F.;Yi, L. X.;Zhang, X. Q.;Wang, Y. S.;
10:1:3:23 Effect of gallium content on bias stress stability of solution-deposited Ga-Sn-Zn-O semiconductor transistors
DOI:10.1016/j.tsf.2011.04.030 JN:THIN SOLID FILMS PY:2011
TC:16 AU: Jeong, Youngmin;Song, Keunkyu;Jun, Taehwan;Jeong, Sunho;Moon, Jooho;
10:1:3:24 Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
DOI:10.1021/am502571w JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Yoon, Seokhyun;Tak, Young Jun;Yoon, Doo Hyun;Choi, Uy Hyun;Park, Jin-Seong;Ahn, Byung Du;Kim, Hyun Jae;
10:1:3:25 Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors
DOI:10.1016/j.ceramint.2014.01.098 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Jeon, Hye-Ji;Maeng, W. J.;Park, Jin-Seong;
10:1:3:26 Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer
DOI:10.1016/j.tsf.2013.06.007 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Zou, Xiao;Fang, Guojia;Qin, Pingli;Wang, Hongjiu;Song, Zengcai;Wang, Haoning;Long, Hao;Wan, Qing;
10:1:3:27 Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors
DOI:10.1063/1.3646388 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Seo, Seok-Jun;Jeon, Jun Hyuck;Hwang, Young Hwan;Bae, Byeong-Soo;
10:1:3:28 Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor
DOI:10.1063/1.3549180 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Kwon, Dae Woong;Kim, Jang Hyun;Chang, Ji Soo;Kim, Sang Wan;Kim, Wandong;Park, Jae Chul;Song, Ihun;Kim, Chang Jung;Jung, U. In;Park, Byung-Gook;
10:1:3:29 Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers
DOI:10.1021/am4002259 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Kim, Deuk Jong;Rim, You Seung;Kim, Hyun Jae;
10:1:3:30 Enhancement of solution-processed zinc tin oxide thin film transistors by silicon incorporation
DOI:10.1116/1.4795760 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Mang, Sung Ryul;Yoon, Dae Ho;Jeon, In Young;Chung, Ho Kyoon;Pu, Lyong Sun;
10:1:3:31 Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors
DOI:10.1016/j.tsf.2013.10.116 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Kim, Ho Beom;Lee, Ho Seong;
10:1:3:32 Effects of Hf incorporation in solution-processed Hf-InZnO TFTs
DOI:10.1016/j.tsf.2010.12.210 JN:THIN SOLID FILMS PY:2011
TC:17 AU: Jeong, Woong Hee;Kim, Gun Hee;Kim, Dong Lim;Shin, Hyun Soo;Kim, Hyun Jae;Ryu, Myung-Kwan;Park, Kyung-Bae;Seon, Jong-Baek;Lee, Sang-Yoon;
10:1:3:33 Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics
DOI:10.1063/1.3658460 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Choi, Hyun-Sik;Jeon, Sanghun;Kim, Hojung;Shin, Jaikwang;Kim, Changjung;Chung, U-In;
10:1:3:34 Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure
DOI:10.1021/am200388h JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:10 AU: Kim, Ji-In;Ji, Kwang Hwan;Jang, Mi;Yang, Hoichang;Choi, Rino;Jeong, Jae Kyeong;
10:1:3:35 Enhanced performance of indium zinc oxide thin film transistor by yttrium doping
DOI:10.1016/j.apsusc.2013.07.111 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Ting, Chu-Chi;Chang, Shiep-Ping;Li, Wei-Yang;Wang, Ching-Hua;
10:1:3:36 The influence of sputtering power and O-2/Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination
DOI:10.1063/1.3488823 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Kim, Hyun-Suk;Park, Kyung-Bae;Son, Kyoung Seok;Park, Joon Seok;Maeng, Wan-Joo;Kim, Tae Sang;Lee, Kwang-Hee;Kim, Eok Su;Lee, Jiyoul;Suh, Joonki;Seon, Jong-Baek;Ryu, Myung Kwan;Lee, Sang Yoon;Lee, Kimoon;Im, Seongil;
10:1:3:37 Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors
DOI:10.1016/j.jallcom.2013.05.077 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Su, Bo-Yuan;Chu, Sheng-Yuan;Juang, Yung-Der;Liu, Ssu-Yin;
10:1:3:38 Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering
DOI:10.1016/j.tsf.2011.04.044 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Chong, Eugene;Chun, Yoon Soo;Kim, Seung Han;Lee, Sang Yeol;
10:1:3:39 Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process
DOI:10.1063/1.3669700 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Choi, Jun Young;Kim, Sang Sig;Lee, Sang Yeol;
10:1:3:40 Homojunction Solution-Processed Metal Oxide Thin-Film Transistors Using Passivation-Induced Channel Definition
DOI:10.1021/am405712m JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Kim, Jung Hyun;Rim, You Seung;Kim, Hyun Jae;
10:1:3:41 Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure
DOI:10.1016/j.jallcom.2014.06.194 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Chen, X. F.;He, G.;Liu, M.;Zhang, J. W.;Deng, B.;Wang, P. H.;Zhang, M.;Lv, J. G.;Sun, Z. Q.;
10:1:3:42 Investigation of solution-processed amorphous SrInZnO thin film transistors
DOI:10.1016/j.jcrysgro.2011.01.090 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Yoon, Doo Hyun;Kim, Si Joon;Jeong, Woong Hee;Kim, Dong Lim;Rim, You Seung;Kim, Hyun Jae;
10:1:3:43 Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment
DOI:10.1063/1.4809727 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Kang, Jung Han;Cho, Edward Namkyu;Kim, Chang Eun;Lee, Min-Jung;Lee, Su Jeong;Myoung, Jae-Min;Yun, Ilgu;
10:1:3:44 Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress
DOI:10.1016/j.tsf.2009.09.193 JN:THIN SOLID FILMS PY:2010
TC:24 AU: Nomura, Kenji;Kamiya, Toshio;Kikuchi, Yutomo;Hirano, Masahiro;Hosono, Hideo;
10:1:3:45 Stability of amorphous InAlZnO thin-film transistors
DOI:10.1116/1.4862150 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: Zhang, Jie;Lu, Jianguo;Jiang, Qingjun;Lu, Bin;Pan, Xinhua;Chen, Lingxiang;Ye, Zhizhen;Li, Xifeng;Guo, Peijun;Zhou, Nanjia;
10:1:3:46 Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer
DOI:10.1016/j.tsf.2011.02.033 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Chong, Eugene;Jeon, Yong Woo;Chun, Yoon Soo;Kim, Dae Hwan;Lee, Sang Yeol;
10:1:3:47 Combined effect of the large ionic radius and low electronegativity of lanthanum additive on solution-processed zinc-tin-oxide thin-film transistors
DOI:10.1016/j.tsf.2013.04.018 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Kim, Chul Ho;Rim, You Seung;Kim, Dong Lim;Kim, Hyun Jae;
10:1:3:48 Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface
DOI:10.1063/1.3643054 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Kim, Ji-In;Ji, Kwang Hwan;Jung, Hong Yoon;Park, Se Yeob;Choi, Rino;Jang, Mi;Yang, Hoichang;Kim, Dae-Hwan;Bae, Jong-Uk;Kim, Chang Dong;Jeong, Jae Kyeong;
10:1:3:49 The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process
DOI:10.1016/j.jcrysgro.2011.01.088 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Kim, Si Joon;Kim, Dong Lim;Rim, You Seung;Jeong, Woong Hee;Kim, Doo Na;Yoon, Doo Hyun;Kim, Hyun Jae;
10:1:3:50 Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor
DOI:10.1063/1.3442482 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Jeon, J. H.;Hwang, Y. H.;Bae, B. S.;Kwon, H. L.;Kang, H. J.;
10:1:3:51 Blue shift in the optical band gap of amorphous Hf-In-Zn-O thin films deposited by RF sputtering
DOI:10.1016/j.jallcom.2012.02.091 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Thakur, Anup;Kang, Se-Jun;Baik, Jae Yoon;Yoo, Hanbyeol;Lee, Ik-Jae;Lee, Han-Koo;Jung, Seonghoon;Park, Jaehun;Shin, Hyun-Joon;
10:1:3:52 Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress
DOI:10.1063/1.4809666 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Park, Jae Chul;Ahn, Seung-Eon;Kim, Chang Jung;Lee, Ho-Nyeon;Im, Seongil;
10:1:3:53 Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film transistors-The effects of employing Group IV-B elements in place of Ga
DOI:10.1016/j.jallcom.2012.12.105 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Moon, Mi Ran;Jeon, Haseok;Na, Sekwon;Kim, Sunho;Jung, Donggeun;Kim, Hyoungsub;Lee, Hoo-Jeong;
10:1:3:54 Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
DOI:10.1016/j.tsf.2011.04.079 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Son, Dae-Ho;Kim, Dae-Hwan;Kim, Jung-Hye;Sung, Shi-Joon;Jung, Eun-Ae;Kang, Jin-Kyu;
10:1:3:55 Structural and electrical properties of the europium-doped indium zinc oxide thin film transistors
DOI:10.1016/j.tsf.2014.04.052 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Ting, Chu-Chi;Li, Wei-Yang;Wang, Ching-Hua;Yong, Hua-En;
10:1:3:56 X-ray reflectivity and surface energy analyses of the physical and electrical properties of alpha-IGZO/GZO double active layer thin film transistors
DOI:10.1016/j.ceramint.2013.08.015 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Wu, Jia-Ling;Lin, Han-Yu;Su, Bo-Yuan;Chen, Yu-Cheng;Chu, Sheng-Yuan;Liu, Ssu-Yin;Chang, Chia-Chiang;Wu, Chin-Jyi;
10:1:3:57 Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor
DOI:10.1080/15421406.2012.691705 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:4 AU: Kim, Dae-Hwan;Son, Dae-Ho;Sung, Shi-Joon;Kim, Jung-Hye;Kang, Jin-Kyu;
10:1:3:58 Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor
DOI:10.1063/1.3508955 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Kwon, Dae Woong;Kim, Jang Hyun;Chang, Ji Soo;Kim, Sang Wan;Sun, Min-Chul;Kim, Garam;Kim, Hyun Woo;Park, Jae Chul;Song, Ihun;Kim, Chang Jung;Jung, U. In;Park, Byung-Gook;
10:1:3:59 Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature
DOI:10.1007/s13391-013-0045-x JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Choi, Jun Young;Kim, SangSig;Lee, Sang Yeol;
10:1:4:1 Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
DOI:10.1002/adma.201103228 JN:ADVANCED MATERIALS PY:2012
TC:428 AU: Fortunato, E.;Barquinha, P.;Martins, R.;
10:1:4:2 Ambipolar Oxide Thin-Film Transistor
DOI:10.1002/adma.201101410 JN:ADVANCED MATERIALS PY:2011
TC:48 AU: Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo;
10:1:4:3 Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing
DOI:10.1063/1.3469939 JN:APPLIED PHYSICS LETTERS PY:2010
TC:53 AU: Fortunato, Elvira;Barros, Raquel;Barquinha, Pedro;Figueiredo, Vitor;Park, Sang-Hee Ko;Hwang, Chi-Sun;Martins, Rodrigo;
10:1:4:4 Complementary Metal Oxide Semiconductor Technology With and On Paper
DOI:10.1002/adma.201102232 JN:ADVANCED MATERIALS PY:2011
TC:56 AU: Martins, Rodrigo;Nathan, Arokia;Barros, Raquel;Pereira, Luis;Barquinha, Pedro;Correia, Nuno;Costa, Ricardo;Ahnood, Arman;Ferreira, Isabel;Fortunato, Elvira;
10:1:4:5 Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits
DOI:10.1063/1.3478213 JN:APPLIED PHYSICS LETTERS PY:2010
TC:45 AU: Yabuta, Hisato;Kaji, Nobuyuki;Hayashi, Ryo;Kumomi, Hideya;Nomura, Kenji;Kamiya, Toshio;Hirano, Masahiro;Hosono, Hideo;
10:1:4:6 Load-Controlled Roll Transfer of Oxide Transistors for Stretchable Electronics
DOI:10.1002/adfm.201202519 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:10 AU: Sharma, Bhupendra K.;Jang, Bongkyun;Lee, Jeong Eun;Bae, Sang-Hoon;Kim, Tae Woong;Lee, Hak-Joo;Kim, Jae-Hyun;Ahn, Jong-Hyun;
10:1:4:7 Effect of Al/Cu ratios on the optical, electrical, and electrochemical properties of Cu-Al-Ca-O thin films
DOI:10.1016/j.jallcom.2014.04.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Cheng, I-Chun;Chang, Shih-Hang;Lin, Guan-Wei;Chi, Chu-Te;Hsiao, Sou-Hui;Chen, Jian-Zhang;
10:1:4:8 Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors
DOI:10.1063/1.4833541 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Caraveo-Frescas, J. A.;Alshareef, H. N.;
10:1:4:9 Influence of annealing temperature on properties of room-temperature rf-sputtered CuAlOx:Ca thin films
DOI:10.1016/j.tsf.2013.11.086 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Huang, Bo-Wei;Chen, Jian-Zhang;Cheng, I-Chun;
10:1:4:10 Characterizing p-channel thin film transistors using ZnO/hydrated polyvinyl alcohol as the conducting channel
DOI:10.1063/1.4893450 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liau, Leo Chau-Kuang;Hsu, Tzu-Hsien;Lo, Pei-Hsuan;
10:1:4:11 Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors
DOI:10.1116/1.4764110 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:4 AU: Nam, Dong-Woo;Cho, In-Tak;Lee, Jong-Ho;Cho, Eou-Sik;Sohn, Joonsung;Song, Sang-Hun;Kwon, Hyuck-In;
10:1:4:12 Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering
DOI:10.1021/nn400852r JN:ACS NANO PY:2013
TC:41 AU: Caraveo-Frescas, Jesus A.;Nayak, Pradipta K.;Al-Jawhari, Hala A.;Granato, Danilo B.;Schwingenschloegl, Udo;Alshareeft, Husam N.;
10:1:4:13 Enhancement of p-type mobility in tin monoxide by native defects
DOI:10.1063/1.4808382 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Granato, D. B.;Caraveo-Frescas, J. A.;Alshareef, H. N.;Schwingenschloegl, U.;
10:1:4:14 Sputtering Deposition of P-Type SnO Films with SnO2 Target in Hydrogen-Containing Atmosphere
DOI:10.1021/am5031787 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Hsu, Po-Ching;Hsu, Chao-Jui;Chang, Ching-Hsiang;Tsai, Shiao-Po;Chen, Wei-Chung;Hsieh, Hsing-Hung;Wu, Chung-Chih;
10:1:4:15 Sputtering deposition of P-type SnO films using robust Sn/SnO2 mixed target
DOI:10.1016/j.tsf.2013.06.059 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Hsu, Po-Ching;Chen, Wei-Chung;Tsai, Yu-Tang;Kung, Yen-Cheng;Chang, Ching-Hsiang;Wu, Chung-Chih;Hsieh, Hsing-Hung;
10:1:4:16 Non-aqueous solution processed ZnO thin film transistors
DOI:10.1016/j.tsf.2010.01.019 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Xiong, Gang;Jones, G. A. C.;Rungsawang, R.;Anderson, D.;
10:1:4:17 P-Type Cu2O/SnO Bilayer Thin Film Transistors Processed at Low Temperatures
DOI:10.1021/am402542j JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:7 AU: Al-Jawhari, Hala A.;Caraveo-Frescas, Jesus A.;Hedhili, M. N.;Alshareef, H. N.;
10:1:4:18 Characterization of low-temperature solution-processed indium-zinc oxide semiconductor thin films by KrF excimer laser annealing
DOI:10.1016/j.ceramint.2014.01.030 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Tsay, Chien-Yie;Huang, Tzu-Teng;
10:1:4:19 Preparation of transparent and conductive cellulose nanocrystals/graphene nanoplatelets films
DOI:10.1007/s10853-013-7776-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: Valentini, L.;Bon, S. Bittolo;Fortunati, E.;Kenny, J. M.;
10:1:4:20 Improving the oxidation potential of Sb-doped SnO2 electrode by Zn/Sb co-doping
DOI:10.1063/1.4885043 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, Aqing;Li, Bin Bin;Miljkovic, Bojan;Souza, Christina;Zhu, Kaigui;Ruda, Harry E.;
10:1:4:21 Physical/chemical characterization and device applications of transparent zinc-tin-oxide thin films deposited using RF sputtering
DOI:10.1016/j.ceramint.2014.02.070 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Do, Woo-Ri;Hwang, Jin-Ha;
10:1:4:22 Luminescence and electrical properties of solution-processed ZnO thin films by adding fluorides and annealing atmosphere
DOI:10.1016/j.materresbull.2011.02.038 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Choi, Sungho;Park, Byung-Yoon;Jung, Ha-Kyun;
10:1:5:1 Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
DOI:10.1016/j.tsf.2011.07.018 JN:THIN SOLID FILMS PY:2012
TC:232 AU: Park, Joon Seok;Maeng, Wan-Joo;Kim, Hyun-Suk;Park, Jin-Seong;
10:1:5:2 High-mobility transparent amorphous metal oxide/nanostructure composite thin film transistors with enhanced-current paths for potential high-speed flexible electronics
DOI:10.1039/c3tc31705f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Liu Xingqiang;Miao Jinshui;Liao Lei;Hu Weida;
10:1:5:3 Persistent photoconductivity in Hf-In-Zn-O thin film transistors
DOI:10.1063/1.3496029 JN:APPLIED PHYSICS LETTERS PY:2010
TC:30 AU: Ghaffarzadeh, Khashayar;Nathan, Arokia;Robertson, John;Kim, Sangwook;Jeon, Sanghun;Kim, Changjung;Chung, U-In;Lee, Je-Hun;
10:1:5:4 High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO
DOI:10.1039/c3tc30890a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:5 AU: Dai, Min-Kun;Lian, Jan-Tien;Lin, Tai-Yuan;Chen, Yang-Fang;
10:1:5:5 Transparent, High-Performance Thin-Film Transistors with an InGaZnO/Aligned-SnO2-Nanowire Composite and their Application in Photodetectors
DOI:10.1002/adma.201401732 JN:ADVANCED MATERIALS PY:2014
TC:10 AU: Liu, Xingqiang;Liu, Xi;Wang, Jingli;Liao, Chongnan;Xiao, Xiangheng;Guo, Shishang;Jiang, Changzhong;Fan, Zhiyong;Wang, Ti;Chen, Xiaoshuang;Lu, Wei;Hu, Weida;Liao, Lei;
10:1:5:6 Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors
DOI:10.1021/nl3012648 JN:NANO LETTERS PY:2012
TC:28 AU: Liu, Xingqiang;Wang, Chunlan;Cai, Bo;Xiao, Xiangheng;Guo, Shishang;Fan, Zhiyong;Li, Jinchai;Duan, Xiangfeng;Liao, Lei;
10:1:5:7 Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface
DOI:10.1063/1.4868978 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Liu, Xiang;Yang, Xiaoxia;Liu, Mingju;Tao, Zhi;Dai, Qing;Wei, Lei;Li, Chi;Zhang, Xiaobing;Wang, Baoping;Nathan, Arokia;
10:1:5:8 Scalable Integration of Indium Zinc Oxide/PhotosensitiveNanowire Composite Thin-Film Transistors for Transparent Multicolor Photodetectors Array
DOI:10.1002/adma.201305073 JN:ADVANCED MATERIALS PY:2014
TC:7 AU: Liu, Xingqiang;Jiang, Lang;Zou, Xuming;Xiao, Xiangheng;Guo, Shishang;Jiang, Changzhong;Liu, Xi;Fan, Zhiyong;Hu, Weida;Chen, Xiaoshuang;Lu, Wei;Hu, Wenping;Liao, Lei;
10:1:5:9 Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors
DOI:10.1063/1.4793996 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Kang, Dong Han;Han, Ji Ung;Mativenga, Mallory;Ha, Su Hwa;Jang, Jin;
10:1:5:10 Ultraflexible amorphous silicon transistors made with a resilient insulator
DOI:10.1063/1.3298364 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Han, Lin;Song, Katherine;Mandlik, Prashant;Wagner, Sigurd;
10:1:5:11 High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path
DOI:10.1063/1.4834375 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Liu, Xingqiang;Wang, Chunlan;Xiao, Xiangheng;Wang, Jingli;Guo, Shishang;Jiang, Changzhong;Yu, Woo Jong;Hu, Weida;Li, Jinchai;Liao, Lei;
10:1:5:12 Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric
DOI:10.1063/1.4808164 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Chang, T. H.;Chiu, C. J.;Chang, S. J.;Tsai, T. Y.;Yang, T. H.;Huang, Z. D.;Weng, W. Y.;
10:1:5:13 Transient photoresponse in amorphous In-Ga-Zn-O thin films under stretched exponential analysis
DOI:10.1063/1.4795845 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Luo, Jiajun;Adler, Alexander U.;Mason, Thomas O.;Buchholz, D. Bruce;Chang, R. P. H.;Grayson, M.;
10:1:5:14 Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors
DOI:10.1063/1.4767912 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Hsieh, Tien-Yu;Chang, Ting-Chang;Chen, Te-Chih;Chen, Yu-Chun;Chen, Yu-Te;Liao, Po-Yung;Chu, Ann-Kuo;Tsai, Wu-Wei;Chiang, Wen-Jen;Yan, Jing-Yi;
10:1:5:15 Temperature dependence of photocurrent in an amorphous GaInZnO/InZnO thin film transistor
DOI:10.1063/1.4826919 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Ahn, Ji-Hoon;Ahn, Seung-Eon;Jeon, Yongwoo;Lee, Seunghyup;Song, Ihun;Kim, Jungwoo;Choi, Hyung;Chung, U-in;
10:1:5:16 High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric
DOI:10.1063/1.4773307 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Chang, T. H.;Chiu, C. J.;Weng, W. Y.;Chang, S. J.;Tsai, T. Y.;Huang, Z. D.;
10:1:5:17 Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric
DOI:10.1016/j.tsf.2013.09.020 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Chen, Rongsheng;Zhou, Wei;Zhang, Meng;Wong, Man;Kwok, Hoi Sing;
10:1:5:18 Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration
DOI:10.1063/1.3454775 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Chang, Seongpil;Dong, Ki-Young;Park, Jung-Ho;Oh, Tae-Yeon;Kim, Jong-Woo;Lee, Sang Yeol;Ju, Byeong-Kwon;
10:1:5:19 Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors
DOI:10.1063/1.4747800 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Debnath, Pulak Chandra;Lee, Sang Yeol;
10:1:6:1 Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress
DOI:10.1063/1.3480547 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: Ghaffarzadeh, Khashayar;Nathan, Arokia;Robertson, John;Kim, Sangwook;Jeon, Sanghun;Kim, Changjung;Chung, U-In;Lee, Je-Hun;
10:1:6:2 Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors
DOI:10.1063/1.4898815 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wei Ou-Yang;Mitoma, Nobuhiko;Kizu, Takio;Gao, Xu;Lin, Meng-Fang;Nabatame, Toshihide;Tsukagoshi, Kazuhito;
10:1:6:3 Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
DOI:10.1063/1.4871511 JN:APPLIED PHYSICS LETTERS PY:2014
TC:5 AU: Kizu, Takio;Aikawa, Shinya;Mitoma, Nobuhiko;Shimizu, Maki;Gao, Xu;Lin, Meng-Fang;Nabatame, Toshihide;Tsukagoshi, Kazuhito;
10:1:6:4 Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 degrees C
DOI:10.1063/1.3479925 JN:APPLIED PHYSICS LETTERS PY:2010
TC:33 AU: Chong, Eugene;Chun, Yoon Soo;Lee, Sang Yeol;
10:1:6:5 Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
DOI:10.1063/1.4822175 JN:APPLIED PHYSICS LETTERS PY:2013
TC:15 AU: Aikawa, Shinya;Nabatame, Toshihide;Tsukagoshi, Kazuhito;
10:1:6:6 Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors
DOI:10.1063/1.4890312 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Gao, Xu;Aikawa, Shinya;Mitoma, Nobuhiko;Lin, Meng-Fang;Kizu, Takio;Nabatame, Toshihide;Tsukagoshi, Kazuhito;
10:1:6:7 Role of silicon in silicon-indium-zinc-oxide thin-film transistor
DOI:10.1063/1.3530453 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Chong, Eugene;Kim, Seung Han;Lee, Sang Yeol;
10:1:6:8 Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
DOI:10.1063/1.4868303 JN:APPLIED PHYSICS LETTERS PY:2014
TC:5 AU: Mitoma, Nobuhiko;Aikawa, Shinya;Gao, Xu;Kizu, Takio;Shimizu, Maki;Lin, Meng-Fang;Nabatame, Toshihide;Tsukagoshi, Kazuhito;
10:1:6:9 Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor
DOI:10.1063/1.4794903 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Aikawa, Shinya;Darmawan, Peter;Yanagisawa, Keiichi;Nabatame, Toshihide;Abe, Yoshiyuki;Tsukagoshi, Kazuhito;
10:1:6:10 Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress
DOI:10.1063/1.3615304 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Kim, Bosul;Chong, Eugene;Kim, Do Hyung;Jeon, Yong Woo;Kim, Dae Hwan;Lee, Sang Yeol;
10:1:6:11 Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors
DOI:10.1007/s11664-014-3333-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Parthiban, S.;Park, K.;Kim, H. -J.;Yang, S.;Kwon, J. -Y.;
10:1:6:12 Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements
DOI:10.1063/1.4751861 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Lee, Sungsik;Nathan, Arokia;
10:1:6:13 Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy
DOI:10.1063/1.4828869 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Ueoka, Y.;Ishikawa, Y.;Maejima, N.;Matsui, F.;Matsui, H.;Yamazaki, H.;Urakawa, S.;Horita, M.;Daimon, H.;Uraoka, Y.;
10:1:6:14 Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors
DOI:10.1016/j.tsf.2011.10.212 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Choi, Jun Young;Kim, SangSig;Lee, Sang Yeol;
10:1:6:15 Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistors
DOI:10.1116/1.4818279 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:6 AU: Park, Sungho;Park, Sekyoung;Ahn, Seung-Eon;Song, Ihun;Chae, Wonseok;Han, Manso;Lee, Jeseung;Jeon, Sanghun;
10:1:6:16 Study of Ti addition in channel layers for In-Zn-O thin film transistors
DOI:10.1016/j.apsusc.2011.09.104 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Yao Qijun;Li Shuxin;Zhang Qun;
10:1:6:17 Comparative analysis of temperature thermally induced instability between Si-In-Zn-O and Ga-In-Zn-O thin film transistors
DOI:10.1016/j.tsf.2011.10.058 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Lee, Sang Yeol;Kim, Do Hyung;Kim, Bosul;Jung, Hyun Kwang;Kim, Dae Hwan;
10:1:6:18 Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors
DOI:10.1063/1.4870406 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Choi, Hyun-Sik;Jeon, Sanghun;
10:1:6:19 Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping
DOI:10.1007/s11664-013-2618-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Han, Dong-Suk;Park, Jae-Hyung;Kang, Yu-Jin;Park, Jong-Wan;
10:1:6:20 Investigation on plasma treatment for transparent Al-Zn-Sn-O thin film transistor application
DOI:10.1016/j.tsf.2013.06.042 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Chang, Chih-Hsiang;Liu, Po-Tsun;
10:1:6:21 Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization
DOI:10.1063/1.4898567 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Yu, Eric Kai-Hsiang;Jun, Sungwoo;Kim, Dae Hwan;Kanicki, Jerzy;
10:1:7:1 Solution-Deposited Organic-Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors
DOI:10.1021/ja202755x JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:28 AU: Ha, Young-geun;Emery, Jonathan D.;Bedzyk, Michael J.;Usta, Hakan;Facchetti, Antonio;Marks, Tobin J.;
10:1:7:2 Reduced Contact Resistance in Inkjet Printed High-Performance Amorphous Indium Gallium Zinc Oxide Transistors
DOI:10.1021/am201776p JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:24 AU: Hennek, Jonathan W.;Xia, Yu;Everaerts, Ken;Hersam, Mark C.;Facchetti, Antonio;Marks, Tobin J.;
10:1:7:3 Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites
DOI:10.1002/adma.201401354 JN:ADVANCED MATERIALS PY:2014
TC:1 AU: Baeg, Kang-Jun;Kim, Myung-Gil;Song, Charles K.;Yu, Xinge;Facchetti, Antonio;Marks, Tobin J.;
10:1:7:4 Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility
DOI:10.1021/am403585n JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:16 AU: Everaerts, Ken;Zeng, Li;Hennek, Jonathan W.;Camacho, Diana I.;Jariwala, Deep;Bedzyk, Michael J.;Hersam, Mark C.;Marks, Tobin J.;
10:1:7:5 Materials for organic and hybrid inorganic/organic electronics
DOI:10.1557/mrs2010.707 JN:MRS BULLETIN PY:2010
TC:41 AU: Marks, Tobin J.;
10:1:7:6 Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors
DOI:10.1002/adma.201003641 JN:ADVANCED MATERIALS PY:2011
TC:45 AU: Park, Young Min;Daniel, Juergen;Heeney, Martin;Salleo, Alberto;
10:1:7:7 Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture
DOI:10.1021/am402065k JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:11 AU: Yu, Xinge;Zhou, Nanjia;Smith, Jeremy;Lin, Hui;Stallings, Katie;Yu, Junsheng;Marks, Tobin J.;Facchetti, Antonio;
10:1:7:8 High-performance low-voltage organic transistor memories with room-temperature solution-processed hybrid nanolayer dielectrics
DOI:10.1039/c3tc30149d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:11 AU: Xia, Guodong;Wang, Sumei;Zhao, Xurong;Zhou, Limin;
10:1:7:9 Quantitative Statistical Analysis of Dielectric Breakdown in Zirconia-Based Self-Assembled Nanodielectrics
DOI:10.1021/nn3011834 JN:ACS NANO PY:2012
TC:5 AU: Schlitz, Ruth A.;Ha, Young-geun;Marks, Tobin J.;Lauhon, Lincoln J.;
10:1:7:10 Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors
DOI:10.1021/am900855s JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:15 AU: Bae, Changdeuck;Kim, Dongjo;Moon, Sunmi;Choi, Taeyoung;Kim, Youngmin;Kim, Bo Sung;Lee, Jang-Sik;Shin, Hyunjung;Moon, Jooho;
10:1:7:11 Reinforced Self-Assembled Nanodielectrics for High-Performance Transparent Thin Film Transistors
DOI:10.1002/adma.201004198 JN:ADVANCED MATERIALS PY:2011
TC:11 AU: Liu, Jun;Hennek, Jonathan W.;Buchholz, D. Bruce;Ha, Young-geun;Xie, Sujing;Dravid, Vinayak P.;Chang, Robert P. H.;Facchetti, Antonio;Marks, Tobin J.;
10:1:8:1 Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
DOI:10.1002/adma.201200683 JN:ADVANCED MATERIALS PY:2012
TC:34 AU: Zan, Hsiao-Wen;Yeh, Chun-Cheng;Meng, Hsin-Fei;Tsai, Chuang-Chuang;Chen, Liang-Hao;
10:1:8:2 Revealing Al evaporation-assisted functions in solution-processed ZnO thin film transistors
DOI:10.1039/c4tc02096k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Kang, Tae Sung;Kim, Tae Yoon;Yoon, Kap Soo;Kim, Jong Min;Im, Hyun Sik;Hong, Jin Pyo;
10:1:8:3 Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers
DOI:10.1016/j.tsf.2011.10.068 JN:THIN SOLID FILMS PY:2012
TC:25 AU: Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo;
10:1:8:4 The influence of SiOx and SiNx passivation on the negative bias stability of Hf-In-Zn-O thin film transistors under illumination
DOI:10.1063/1.3435482 JN:APPLIED PHYSICS LETTERS PY:2010
TC:36 AU: Park, Joon Seok;Kim, Tae Sang;Son, Kyoung Seok;Lee, Kwang-Hee;Maeng, Wan-Joo;Kim, Hyun-Suk;Kim, Eok Su;Park, Kyung-Bae;Seon, Jong-Baek;Choi, Woong;Ryu, Myung Kwan;Lee, Sang Yoon;
10:1:8:5 Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement
DOI:10.1063/1.3578403 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Zan, Hsiao-Wen;Chen, Wei-Tsung;Yeh, Chung-Cheng;Hsueh, Hsiu-Wen;Tsai, Chuang-Chuang;Meng, Hsin-Fei;
10:1:8:6 Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
DOI:10.1063/1.4801892 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Ortel, Marlis;Pittner, Steve;Wagner, Veit;
10:1:8:7 Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
DOI:10.1002/adma.201102530 JN:ADVANCED MATERIALS PY:2011
TC:20 AU: Zan, Hsiao-Wen;Tsai, Wu-Wei;Chen, Chia-Hsin;Tsai, Chuang-Chuang;
10:1:8:8 Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process
DOI:10.1039/c3tc32341b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Kang, Tae Sung;Kim, Tae Yoon;Lee, Gyu Min;Sohn, Hyun Chul;Hong, Jin Pyo;
10:1:8:9 Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors
DOI:10.1063/1.4897003 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xu, Yong;Liu, Chuan;Amegadze, Paul Seyram K.;Park, Won-Tae;Long, Dang Xuan;Minari, Takeo;Balestra, Francis;Ghibaudo, Gerard;Noh, Yong-Young;
10:1:8:10 InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers
DOI:10.1063/1.4864313 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Xiao, Peng;Lan, Linfeng;Dong, Ting;Lin, Zhenguo;Shi, Wen;Yao, Rihui;Zhu, Xuhui;Peng, Junbiao;
10:1:8:11 Long-term stabilization of sprayed zinc oxide thin film transistors by hexafluoropropylene oxide self assembled monolayers
DOI:10.1063/1.4820458 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Ortel, Marlis;Kalinovich, Nataliya;Roeschenthaler, Gerd-Volker;Wagner, Veit;
10:1:8:12 Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors
DOI:10.1016/j.tsf.2011.10.065 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Yoo, Dong Youn;Chong, Eugene;Kim, Do Hyung;Ju, Byeong Kwon;Lee, Sang Yeol;
10:1:8:13 Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers
DOI:10.1016/j.mssp.2014.08.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Dong, Chengyuan;Wu, Jie;Chen, Yuting;Zhou, Daxiang;Hu, Zhe;Xie, Haiting;Chiang, Cheng-Lung;Chen, Po-Lin;Lai, Tzu-Chieh;Lo, Chang-Cheng;Lien, A.;
10:1:8:14 Improvements in passivation effect of amorphous InGaZnO thin film transistors
DOI:10.1016/j.mssp.2013.12.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Dong, Chengyuan;Shi, Junfei;Wu, Jie;Chen, Yuting;Zhou, Daxiang;Hu, Zhe;Xie, Haiting;Zhan, Runze;Zou, Zhongfei;
10:1:8:15 Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-kappa HfO2 as gate insulator
DOI:10.1016/j.tsf.2011.11.039 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Lin, Wen-Kai;Liu, Kou-Chen;Chang, Shu-Tong;Li, Chi-Shiau;
10:1:8:16 Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing
DOI:10.1016/j.mssp.2011.02.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:8 AU: Jeon, Sang-Jin;Chang, Jong-Woong;Choi, Kwang-Soo;Kar, Jyoti Prakash;Lee, Tae-Il;Myoung, Jae-Min;
10:1:8:17 Improvement in the bias stability of tin oxide thin-film transistors by hafnium doping
DOI:10.1016/j.tsf.2011.08.028 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Kim, Woong-Sun;Moon, Yeon-Keon;Kim, Kyung-Taek;Shin, Sae-Young;Park, Jong-Wan;
10:1:9:1 Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
DOI:10.1063/1.3589371 JN:APPLIED PHYSICS LETTERS PY:2011
TC:36 AU: Lee, Sungsik;Ghaffarzadeh, Khashayar;Nathan, Arokia;Robertson, John;Jeon, Sanghun;Kim, Changjung;Song, I-Hun;Chung, U-In;
10:1:9:2 Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors
DOI:10.1063/1.3364131 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Kamiya, Toshio;Nomura, Kenji;Hosono, Hideo;
10:1:9:3 Effects of Mg on the electrical characteristics and thermal stability of MgxZn1-xO thin film transistors
DOI:10.1063/1.3567533 JN:APPLIED PHYSICS LETTERS PY:2011
TC:33 AU: Ku, Chieh-Jen;Duan, Ziqing;Reyes, Pavel I.;Lu, Yicheng;Xu, Yi;Hsueh, Chien-Lan;Garfunkel, Eric;
10:1:9:4 Properties and doping limits of amorphous oxide semiconductors
DOI:10.1016/j.jnoncrysol.2011.12.012 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:9 AU: Robertson, John;
10:1:9:5 Advances in understanding of transparent conducting oxides
DOI:10.1016/j.tsf.2011.10.063 JN:THIN SOLID FILMS PY:2012
TC:17 AU: Robertson, J.;Gillen, R.;Clark, S. J.;
10:1:9:6 A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination
DOI:10.1063/1.4870457 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Flewitt, A. J.;Powell, M. J.;
10:1:9:7 Multi-component transparent conductive oxide films on polyimide substrate prepared by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2013.03.122 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Zhou, YanWen;Liu, Xi;Lu, YunHua;Hu, Zhizhi;Zhang, ChaoKui;Wu, FaYu;
10:1:9:8 Surface morphology study of recrystallization dynamics of amorphous ZnO layers prepared on different substrates
DOI:10.1007/s00339-014-8555-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Hasko, Daniel;Bruncko, Jaroslav;Uherek, Frantisek;
10:1:9:9 H-2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors
DOI:10.1016/j.jnoncrysol.2013.06.014 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:2 AU: Li, Yuanjie;Liu, Zilong;Jiang, Kai;Hu, Xiaofen;
10:1:9:10 Effects of growth temperature on performance and stability of zinc oxide thin film transistors fabricated by thermal atomic layer deposition
DOI:10.1016/j.tsf.2014.04.003 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Cho, Sung Woon;Ahn, Cheol Hyoun;Yun, Myeong Gu;Kim, So Hee;Cho, Hyung Koun;
10:1:9:11 Anodized ITO Thin-Film Transistors
DOI:10.1002/adfm.201400263 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:2 AU: Shao, Yang;Xiao, Xiang;Wang, Longyan;Liu, Yang;Zhang, Shengdong;
10:1:9:12 Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors
DOI:10.1016/j.tsf.2013.11.066 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Abe, Katsumi;Sato, Ayumu;Takahashi, Kenji;Kumomi, Hideya;Kamiya, Toshio;Hosono, Hideo;
10:1:9:13 Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors
DOI:10.1016/j.tsf.2011.10.060 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Abe, Katsumi;Takahashi, Kenji;Sato, Ayumu;Kumomi, Hideya;Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo;
10:1:10:1 Facile passivation of solution-processed InZnO thin-film transistors by octadecylphosphonic acid self-assembled monolayers at room temperature
DOI:10.1063/1.4874303 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Xu, Wangying;Liu, Danqing;Wang, Han;Ye, Lei;Miao, Qian;Xu, Jian-Bin;
10:1:10:2 Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation
DOI:10.1063/1.4826457 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Rajachidambaram, M. S.;Pandey, A.;Vilayurganapathy, S.;Nachimuthu, P.;Thevuthasan, S.;Herman, G. S.;
10:1:10:3 Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
DOI:10.1002/adma.201300549 JN:ADVANCED MATERIALS PY:2013
TC:10 AU: Fakhri, Morteza;Babin, Nikolai;Behrendt, Andreas;Jakob, Timo;Goerrn, Patrick;Riedl, Thomas;
10:1:10:4 Characterization of amorphous zinc tin oxide semiconductors
DOI:10.1557/jmr.2012.170 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:7 AU: Rajachidambaram, Jaana S.;Sanghavi, Shail;Nachimuthu, Ponnusamy;Shutthanandan, Vaithiyalingam;Varga, Tamas;Flynn, Brendan;Thevuthasan, Suntharampillai;Herman, Gregory S.;
10:1:10:5 Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures
DOI:10.1063/1.3643040 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Fakhri, M.;Goerrn, P.;Weimann, T.;Hinze, P.;Riedl, T.;
10:1:10:6 Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors
DOI:10.1063/1.4807014 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Chen, Fa-Hsyang;Her, Jim-Long;Mondal, Somnath;Hung, Meng-Ning;Pan, Tung-Ming;
10:1:10:7 Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors
DOI:10.1063/1.3477192 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:20 AU: Olziersky, Antonis;Barquinha, Pedro;Vila, Anna;Pereira, Luis;Goncalves, Goncalo;Fortunato, Elvira;Martins, Rodrigo;Morante, Juan R.;
10:1:10:8 Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability
DOI:10.1063/1.4885362 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Fakhri, M.;Theisen, M.;Behrendt, A.;Goerrn, P.;Riedl, T.;
10:1:10:9 Water as Origin of Hysteresis in Zinc Tin Oxide Thin-Film Transistors
DOI:10.1021/am301308y JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:15 AU: Fakhri, M.;Johann, H.;Goerrn, P.;Riedl, T.;
10:1:10:10 Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors
DOI:10.1063/1.3551536 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Yang, Shinhyuk;Hwang, Chi-Sun;Lee, Jeong-Ik;Yoon, Sung-Min;Ryu, Min-Ki;Cho, Kyoung-Ik;Park, Sang-Hee Ko;Kim, Se-Hyun;Park, Chan-Eon;Jang, Jin;
10:1:10:11 Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors
DOI:10.1063/1.3485056 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Kim, Yong-Hoon;Kim, Hyun Soo;Han, Jeong-In;Park, Sung Kyu;
10:1:10:12 Electrical characteristics of GdTiO3 gate dielectric for amorphous InGaZnO thin-film transistors
DOI:10.1016/j.tsf.2014.08.021 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Her, Jim-Long;Pan, Tung-Ming;Liu, Jiang-Hung;Wang, Hong-Jun;Chen, Ching-Hung;Koyama, Keiichi;
10:1:10:13 Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor
DOI:10.1016/j.tsf.2013.12.044 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Vila, A.;Gomez, A.;Portilla, L.;Morante, J. R.;
10:1:10:14 Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures
DOI:10.1063/1.4892354 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Choi, Bum Ho;Lee, Jong Ho;
10:1:10:15 Interfacial Study of Metal Oxide with Source-Drain Electrodes and Oxide Semiconductor by XPS
DOI:10.1007/s13391-011-1073-z JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:9 AU: Choi, Woon-Seop;
10:1:11:1 Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure
DOI:10.1063/1.4794941 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Park, Hyun-Woo;Kim, Boo-Kyoung;Park, Jin-Seong;Chung, Kwun-Bum;
10:1:11:2 Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 degrees C
DOI:10.1063/1.4704926 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Park, Se Yeob;Ji, Kwang Hwan;Jung, Hong Yoon;Kim, Ji-In;Choi, Rino;Son, Kyoung Seok;Ryu, Myung Kwan;Lee, Sangyoon;Jeong, Jae Kyeong;
10:1:11:3 Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films
DOI:10.1063/1.3424790 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Seo, Hyungtak;Park, Chan-Jun;Cho, Young-Je;Kim, Young-Bae;Choi, Duck-Kyun;
10:1:11:4 The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors
DOI:10.1016/j.ceramint.2013.09.118 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Lee, Kwang-Ho;Ok, Kyung-Chul;Kim, H.;Park, Jin-Seong;
10:1:11:5 TiO2 thin-film transistors fabricated by spray pyrolysis
DOI:10.1063/1.3330944 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Woebkenberg, Paul H.;Ishwara, Thilini;Nelson, Jenny;Bradley, Donal D. C.;Haque, Saif A.;Anthopoulos, Thomas D.;
10:1:11:6 The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
DOI:10.1063/1.4895102 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Du Ahn, Byung;Choi, Dong-won;Choi, Changhwan;Park, Jin-Seong;
10:1:11:7 Semiconducting behavior of niobium-doped titanium oxide in the amorphous state
DOI:10.1063/1.3698389 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Ok, Kyung-Chul;Park, Joseph;Lee, Ju Ho;Du Ahn, Byung;Lee, Je Hun;Chung, Kwun-Bum;Park, Jin-Seong;
10:1:11:8 The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties
DOI:10.1063/1.4831783 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Ok, Kyung-Chul;Park, Yoseb;Chung, Kwun-Bum;Park, Jin-Seong;
10:1:11:9 Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures
DOI:10.1063/1.4875044 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Kim, B. K.;Park, J. S.;Kim, D. H.;Chung, K. B.;
10:1:11:10 Device instability of postannealed TiOx thin-film transistors under gate bias stresses
DOI:10.1116/1.4790572 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Ahn, Byung Du;Ok, Kyung-Chul;Park, Jin-Seong;Chung, Kwun-Bum;
10:1:11:11 Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing
DOI:10.1016/j.apsusc.2014.09.180 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Park, Hyun-Woo;Choi, Min-Jun;Jo, Yongcheol;Chung, Kwun-Bum;
10:1:11:12 Molecular orbital ordering in titania and the associated semiconducting behavior
DOI:10.1063/1.3646105 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Park, Joseph;Ok, Kyung-Chul;Ahn, Byung Du;Lee, Je Hun;Park, Jae-Woo;Chung, Kwun-Bum;Park, Jin-Seong;
10:1:11:13 The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
DOI:10.1063/1.4864617 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Ok, Kyung-Chul;Park, Sang-Hee Ko;Hwang, Chi-Sun;Kim, H.;Shin, Hyun Soo;Bae, Jonguk;Park, Jin-Seong;
10:1:11:14 d-orbital ordering of oxygen-deficient amorphous and anatase TiO2-x channels for high mobility thin film transistors
DOI:10.1063/1.4802717 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Choi, Kwang-Hyuk;Chung, Kwun-Bum;Kim, Han-Ki;
10:1:11:15 Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer
DOI:10.1007/s11664-012-2348-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Chong, Ho Yong;Kim, Tae Whan;
10:1:11:16 Optimization of amorphous TiOx-based thin film transistors fabricated by dc magnetron sputtering
DOI:10.1116/1.4736932 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:0 AU: Choi, Kwang-Hyuk;Kim, Han-Ki;
10:1:11:17 UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors
DOI:10.1116/1.3498744 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Tang, W. M.;Ng, W. T.;Helander, M. G.;Greiner, M. T.;Lu, Z. H.;
10:1:12:1 Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors
DOI:10.1063/1.4790357 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Choi, Kwang-Hyuk;Kim, Han-Ki;
10:1:12:2 An investigation of contact resistance between metal electrodes and amorphous gallium-indium-zinc oxide (a-GIZO) thin-film transistors
DOI:10.1016/j.tsf.2010.02.044 JN:THIN SOLID FILMS PY:2010
TC:35 AU: Kim, Woong-Sun;Moon, Yeon-Keon;Kim, Kyung-Taek;Lee, Je-Hun;Ahn, Byung-du;Park, Jong-Wan;
10:1:12:3 Molybdenum as a contact material in zinc tin oxide thin film transistors
DOI:10.1063/1.4875958 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hu, W.;Peterson, R. L.;
10:1:12:4 Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100MHz operation
DOI:10.1063/1.4905015 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Muenzenrieder, Niko;Salvatore, Giovanni A.;Petti, Luisa;Zysset, Christoph;Buethe, Lars;Vogt, Christian;Cantarella, Giuseppe;Troester, Gerhard;
10:1:12:5 Carrier transport mechanism at metal/amorphous gallium indium zinc oxides interfaces
DOI:10.1063/1.4737423 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kim, Seongjun;Kim, Kyoung-Kook;Kim, Hyunsoo;
10:1:12:6 Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors
DOI:10.1063/1.4902856 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Trinh, Thanh Thuy;Jang, Kyungsoo;Dao, Vinh Ai;Yi, Junsin;
10:1:12:7 Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides
DOI:10.1063/1.3567796 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Kim, Hyunsoo;Kim, Kyoung-Kook;Lee, Sung-Nam;Ryou, Jae-Hyun;Dupuis, Russell D.;
10:1:12:8 Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
DOI:10.1063/1.4862537 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Cho, Byungsu;Choi, Yonghyuk;Jeon, Heeyoung;Shin, Seokyoon;Seo, Hyungtak;Jeon, Hyeongtag;
10:1:12:9 Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In-Ga-Zn-O surface
DOI:10.1016/j.tsf.2014.08.043 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Kang, Se Jun;Baik, Jaeyoon;Ha, Taekyun;Do Park, Chong;Shin, Hyun-Joon;Chung, JaeGwan;Lee, Jaecheol;
10:1:12:10 Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
DOI:10.1063/1.3699221 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Thanh Thuy Trinh;Van Duy Nguyen;Hong Hanh Nguyen;Jang, Juyeon;Jang, Kyungsoo;Baek, Kyunghyun;Vinh Ai Dao;Yi, Junsin;
10:1:12:11 The electrical conduction properties of poly-crystalline indium-zinc-oxide film
DOI:10.1063/1.4865504 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Tomai, S.;Terai, K.;Junke, T.;Tsuruma, Y.;Ebata, K.;Yano, K.;Uraoka, Y.;
10:1:12:12 Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
DOI:10.1063/1.3364134 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Lee, Sangwon;Park, Jun-Hyun;Jeon, Kichan;Kim, Sungchul;Jeon, Yongwoo;Kim, Dae Hwan;Kim, Dong Myong;Park, Jae Chul;Kim, Chang Jung;
10:1:12:13 A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors
DOI:10.1557/JMR.2010.0032 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:3 AU: Park, Kyung;An, Chee-Hong;Hwang, Byung-Il;Lee, Hoo-Jeong;Kim, Hyoungsub;Son, Kyungseok;Kwon, Jang-Yeon;Lee, Sangyun;
10:1:12:14 Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors
DOI:10.1016/j.tsf.2011.04.041 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Lee, Ju Ho;Ahn, Cheol Hyoun;Hwang, Sooyeon;Woo, Chang Ho;Park, Jin-Seong;Cho, Hyung Koun;Lee, Jeong Yong;
10:1:12:15 Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode
DOI:10.1016/j.jallcom.2013.02.012 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Yang, Seong-Uk;Choi, Seung-Ha;Lee, Jongtaek;Kim, Jeehwan;Jung, Woo-Shik;Yu, Hyun-Yong;Roh, Yonghan;Park, Jin-Hong;
10:1:12:16 Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)
DOI:10.1016/j.materresbull.2013.11.005 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Yang, Seong-Uk;Jung, Woo-Shik;Lee, In-Yeal;Jung, Hyun-Wook;Kim, Gil-Ho;Park, Jin-Hong;
10:1:13:1 Material characteristics and applications of transparent amorphous oxide semiconductors
DOI:10.1038/asiamat.2010.5 JN:NPG ASIA MATERIALS PY:2010
TC:177 AU: Kamiya, Toshio;Hosono, Hideo;
10:1:13:2 Sol-Gel Solution-Deposited InGaZnO Thin Film Transistors
DOI:10.1021/am500126b JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:16 AU: Street, Robert A.;Ng, Tse Nga;Lujan, Rene A.;
10:1:13:3 Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements
DOI:10.1063/1.4796119 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Adler, Alexander U.;Yeh, Ted C.;Buchholz, D. Bruce;Chang, Robert P. H.;Mason, Thomas O.;
10:1:13:4 Electrochemical synthesis of flat-[Ga13-xInx(mu(3)-OH)(6)(mu-OH)(18)(H2O)(24)(NO3)(15)] clusters as aqueous precursors for solution-processed semiconductors
DOI:10.1039/c4tc01354a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Carnes, Matthew E.;Knutson, Christopher C.;Nadarajah, Athavan;Jackson, Milton N., Jr.;Oliveri, Anna F.;Norelli, Kevin M.;Crockett, Brandon M.;Bauers, Sage R.;Moreno-Luna, Hidekel A.;Taber, Benjamen N.;Pacheco, Daniel. J.;Olson, Jarred Z.;Brevick, Kaylena R.;Sheehan, Claire E.;Johnson, Darren W.;Boettcher, Shannon W.;
10:1:13:5 Control and characterization of structural and optical properties of ZnO thin films fabricated by thermal oxidation Zn metallic films
DOI:10.1016/j.optmat.2011.11.005 JN:OPTICAL MATERIALS PY:2012
TC:5 AU: Hong, Ruijin;Xu, Liang;Wen, Herui;Chen, Jinglin;Liao, Jinsheng;You, Weixiong;
10:1:13:6 Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model
DOI:10.1063/1.4801991 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Kiani, Ahmed;Hasko, David G.;Milne, William I.;Flewitt, Andrew J.;
10:1:13:7 Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors
DOI:10.1063/1.4879554 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Thakur, Bikash;Lee, Sungsik;Ahnood, Arman;Jeon, Sanghun;Sambandan, Sanjiv;Nathan, Arokia;
10:1:13:8 Development of p-type amorphous Cu1-xBxO2-delta thin films and fabrication of pn hetero junction
DOI:10.1016/j.mseb.2014.02.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:0 AU: Sanal, K. C.;Jayaraj, M. K.;
10:1:14:1 Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor
DOI:10.1063/1.3570641 JN:APPLIED PHYSICS LETTERS PY:2011
TC:30 AU: Lee, Sang Yeol;Kim, Do Hyung;Chong, Eugene;Jeon, Yong Woo;Kim, Dae Hwan;
10:1:14:2 Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
DOI:10.1063/1.3458799 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Nomura, Kenji;Aoki, Takashi;Nakamura, Kiyoshi;Kamiya, Toshio;Nakanishi, Takashi;Hasegawa, Takayuki;Kimura, Mutsumi;Kawase, Takeo;Hirano, Masahiro;Hosono, Hideo;
10:1:14:3 Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor
DOI:10.1063/1.3657511 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Kim, Do Hyung;Yoo, Dong Youn;Jung, Hyun Kwang;Kim, Dae Hwan;Lee, Sang Yeol;
10:1:14:4 Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer
DOI:10.1063/1.4805354 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Huang, Xiaoming;Wu, Chenfei;Lu, Hai;Ren, Fangfang;Chen, Dunjun;Zhang, Rong;Zheng, Youdou;
10:1:14:5 Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor
DOI:10.1063/1.3645597 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Kim, Do Hyung;Jung, Hyun Kwang;Kim, Dae Hwan;Lee, Sang Yeol;
10:1:14:6 High-resolution soft x-ray spectroscopic study on amorphous gallium indium zinc oxide thin films
DOI:10.1063/1.3457782 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Lee, Mi Ji;Kang, Se Jun;Baik, Jae Yoon;Kim, Ki-jeong;Kim, Hyeong-Do;Shin, Hyun-Joon;Chung, JaeGwan;Lee, Jaecheol;Lee, JaeHak;
10:1:14:7 Investigation on mechanism for instability under drain current stress in amorphous Si-In-Zn-O thin-film transistors
DOI:10.1016/j.tsf.2012.12.017 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Kim, Do Hyung;Jung, Hyun Kwang;Yang, Woochul;Kim, Dae Hwan;Lee, Sang Yeol;
10:1:14:8 Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface
DOI:10.1063/1.4795536 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Cho, Byungsu;Lee, Jaesang;Seo, Hyungtak;Jeon, Hyeongtag;
10:1:14:9 Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion
DOI:10.1007/s00339-013-7900-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Zheng, Z. W.;Chen, Y. C.;
10:1:14:10 Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors
DOI:10.1016/j.materresbull.2014.05.009 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Han, Dong-Suk;Kang, Yu-Jin;Park, Jae-Hyung;Jeon, Hyung-Tag;Park, Jong-Wan;
10:1:14:11 Effect of double-layered Al2O3/SiO2 dielectric materials on In-Ga-Zn-O (IGZO)-based amorphous transparent thin film transistors
DOI:10.1016/j.ceramint.2014.04.151 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Park, Chan-Rok;Hwang, Jin-Ha;
10:1:14:12 Nanoparticle-based flexible inverters with a vertical structure
DOI:10.1016/j.tsf.2013.04.147 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Yun, Junggwon;Cho, Kyoungah;Kim, Sangsig;
10:1:15:1 Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy
DOI:10.1063/1.4896764 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Sun, R. J.;Li, X. F.;Jiang, Q. J.;Yan, W. C.;Feng, L. S.;Li, X. D.;Lu, B.;Ye, Z. Z.;Lu, J. G.;
10:1:15:2 Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure
DOI:10.1063/1.3656444 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:17 AU: Zhang, J.;Li, X. F.;Lu, J. G.;Ye, Z. Z.;Gong, L.;Wu, P.;Huang, J.;Zhang, Y. Z.;Chen, L. X.;Zhao, B. H.;
10:1:15:3 Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer
DOI:10.1063/1.4796174 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Lee, Jeong Eun;Sharma, Bhupendra K.;Lee, Seoung-Ki;Jeon, Haseok;Hong, Byung Hee;Lee, Hoo-Jeong;Ahn, Jong-Hyun;
10:1:15:4 Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors
DOI:10.1063/1.3601488 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Zan, Hsiao-Wen;Li, Chang-Hung;Yeh, Chun-Cheng;Dai, Ming-Zhi;Meng, Hsin-Fei;Tsai, Chuang-Chuang;
10:1:15:5 Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors
DOI:10.1063/1.4818728 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Wu, Chuanjia;Li, Xifeng;Lu, Jianguo;Ye, Zhizhen;Zhang, Jie;Zhou, Tingting;Sun, Rujie;Chen, Lingxiang;Lu, Bin;Pan, Xinhua;
10:1:15:6 Characterization of ZnO-SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties
DOI:10.1016/j.matlet.2014.01.134 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Lee, Su-Jae;Hwang, Chi-Sun;Pi, Jae-Eun;Ryu, Min-Ki;Oh, Himchan;Cho, Sung Haeng;Yang, Jong-Heon;Park, Sang-Hee Ko;Chu, Hye Yong;
10:1:15:7 Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility
DOI:10.1063/1.4896990 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Jiang, Qingjun;Lu, Jianguo;Cheng, Jipeng;Li, Xifeng;Sun, Rujie;Feng, Lisha;Dai, Wen;Yan, Weichao;Ye, Zhizhen;
10:1:15:8 Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness
DOI:10.1063/1.4828674 JN:AIP ADVANCES PY:2013
TC:3 AU: Li, Jun;Ding, Xing-Wei;Zhang, Jian-Hua;Zhang, Hao;Jiang, Xue-Yin;Zhang, Zhi-Lin;
10:1:15:9 Preparation and the electrical properties of In-Zn-Li-O thin film transistor by radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2014.07.181 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Li, Bin;Wang, Hailong;Zhou, Dongzhan;Hu, Zuofu;Wu, Huaihao;Gao, Song;Peng, Yunfei;Yi, Lixin;Zhang, Xiqing;Wang, Yongsheng;
10:1:15:10 Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing
DOI:10.1063/1.4711046 JN:AIP ADVANCES PY:2012
TC:1 AU: Zhang, J.;Li, X. F.;Lu, J. G.;Wu, P.;Huang, J.;Wang, Q.;Lu, B.;Zhang, Y. Z.;Zhao, B. H.;Ye, Z. Z.;
10:1:15:11 Effect of thermal annealing on Ni/Au contact to a-InGaZnO films deposited by dc sputtering
DOI:10.1016/j.tsf.2010.02.054 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Kim, Hyunghoon;Moon, Jin Yong;Heo, Young-Woo;Lee, Ho Seong;
10:1:16:1 Solution-processed zinc-tin oxide thin-film transistors with low interfacial trap density and improved performance
DOI:10.1063/1.3454241 JN:APPLIED PHYSICS LETTERS PY:2010
TC:52 AU: Lee, Chen-Guan;Dodabalapur, Ananth;
10:1:16:2 Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications
DOI:10.1063/1.4795302 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Ha, Tae-Jun;Dodabalapur, Ananth;
10:1:16:3 Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors
DOI:10.1063/1.3517502 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Lee, Chen-Guan;Cobb, Brian;Dodabalapur, Ananth;
10:1:16:4 Charge transport in solution-processed zinc tin oxide thin film transistors
DOI:10.1557/jmr.2012.134 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:5 AU: Hu, Wenbing;Peterson, Rebecca L.;
10:1:16:5 Charge carrier velocity distributions in field-effect transistors
DOI:10.1063/1.3558910 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Lee, Chen-Guan;Cobb, Brian;Ferlauto, Laura;Dodabalapur, Ananth;
10:1:16:6 Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors
DOI:10.1007/s00339-014-8422-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Schulz, Leander;Yun, Eui-Jung;Dodabalapur, Ananth;
10:1:16:7 Solution-Processed High-k Dielectric, ZrO2, and Integration in Thin-Film Transistors
DOI:10.1007/s11664-012-1905-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:9 AU: Lee, Chen-Guan;Dodabalapur, Ananth;
10:1:16:8 Influences of film thickness and annealing temperature on properties of sol-gel derived ZnO-SnO2 nanocomposite thin film
DOI:10.1016/j.apsusc.2014.09.099 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Lee, Sang-Min;Joo, Young-Hee;Kim, Chang-Il;
10:1:16:9 Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
DOI:10.1038/NMAT3011 JN:NATURE MATERIALS PY:2011
TC:292 AU: Kim, Myung-Gil;Kanatzidis, Mercouri G.;Facchetti, Antonio;Marks, Tobin J.;
10:1:16:10 Velocity-field characteristics of polycrystalline pentacene field-effect transistors
DOI:10.1063/1.3374707 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Cobb, Brian;Wang, Liang;Dunn, Lawrence;Dodabalapur, Ananth;
10:1:17:1 Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
DOI:10.1063/1.4880163 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Benwadih, Mohammed;Chroboczek, J. A.;Ghibaudo, Gerard;Coppard, Romain;Vuillaume, Dominique;
10:1:17:2 Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
DOI:10.1016/j.tsf.2011.01.074 JN:THIN SOLID FILMS PY:2011
TC:39 AU: Hwang, Sooyeon;Lee, Ju Ho;Woo, Chang Ho;Lee, Jeong Yong;Cho, Hyung Koun;
10:1:17:3 Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
DOI:10.1063/1.3514249 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Nayak, Pradipta K.;Busani, Tito;Elamurugu, Elangovan;Barquinha, Pedro;Martins, Rodrigo;Hong, Yongtaek;Fortunato, Elvira;
10:1:17:4 In-Ga-Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method
DOI:10.1039/c3tc31944j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:4 AU: Fukuda, Nobuko;Watanabe, Yuichi;Uemura, Sei;Yoshida, Yuji;Nakamura, Takashi;Ushijima, Hirobumi;
10:1:17:5 Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors
DOI:10.1088/0957-4484/21/29/295707 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Huang, Heh-Chang;Hsieh, Tsung-Eong;
10:1:17:6 Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature
DOI:10.1063/1.4798305 JN:AIP ADVANCES PY:2013
TC:8 AU: Li, Xifeng;Xin, Enlong;Chen, Longlong;Shi, Jifeng;Zhang, Jianhua;
10:1:17:7 Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol-gel derived precursor films
DOI:10.1016/j.matchemphys.2013.03.051 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:4 AU: Tsay, Chien-Yie;Huang, Tzu-Teng;
10:1:17:8 Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol-gel process
DOI:10.1016/j.jcrysgro.2011.01.091 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Choi, Jun Hyuk;Hwang, Soo Min;Lee, Chang Min;Kim, Ji Cheol;Park, Geun Chul;Joo, Jinho;Lim, Jun Hyung;
10:1:17:9 Properties of SiO(2) and Si(3)N(4) as gate dielectrics for printed ZnO transistors
DOI:10.1116/1.3524291 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Walther, S.;Polster, S.;Meyer, B.;Jank, M. P. M.;Ryssel, H.;Frey, L.;
10:1:18:1 Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance
DOI:10.1021/am401128p JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Park, Jae Chul;Lee, Ho-Nyeon;Im, Seongil;
10:1:18:2 Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5
DOI:10.1063/1.4811416 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Lan, Linfeng;Xiong, Nana;Xiao, Peng;Li, Min;Xu, Hua;Yao, Rihui;Wen, Shangsheng;Peng, Junbiao;
10:1:18:3 A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized aluminium oxide as dielectric
DOI:10.1039/c3tc31710b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:11 AU: Xu, Hua;Luo, Dongxiang;Li, Min;Xu, Miao;Zou, Jianhua;Tao, Hong;Lan, Linfeng;Wang, Lei;Peng, Junbiao;Cao, Yong;
10:1:18:4 Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
DOI:10.1063/1.4790619 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Urakawa, Satoshi;Tomai, Shigekazu;Ueoka, Yoshihiro;Yamazaki, Haruka;Kasami, Masashi;Yano, Koki;Wang, Dapeng;Furuta, Mamoru;Horita, Masahiro;Ishikawa, Yasuaki;Uraoka, Yukiharu;
10:1:18:5 High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique
DOI:10.1063/1.3670336 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Xu, Hua;Lan, Linfeng;Xu, Miao;Zou, Jianhua;Wang, Lei;Wang, Dan;Peng, Junbiao;
10:1:18:6 Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors
DOI:10.1063/1.4891644 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kim, Jong In;Chang, Ki Soo;Kim, Dong Uk;Cho, In-Tak;Jeong, Chan-Yong;Lee, Daeun;Kwon, Hyuck-In;Jin, Sung Hun;Lee, Jong-Ho;
10:1:18:7 Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics
DOI:10.1063/1.3660791 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Lan, Linfeng;Xu, Miao;Peng, Junbiao;Xu, Hua;Li, Min;Luo, Dongxiang;Zou, Jianhua;Tao, Hong;Wang, Lei;Yao, Rihui;
10:1:18:8 High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures
DOI:10.1063/1.3683518 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Wang, S. -L.;Yu, J. -W.;Yeh, P. -C.;Kuo, H. -W.;Peng, L. -H.;Fedyanin, A. A.;Mishina, E. D.;Sigov, A. S.;
10:1:18:9 Studies on NdxIn1-xO3 semiconducting thin films prepared by rf magnetron sputtering
DOI:10.1063/1.4897998 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Zhenguo;Lan, Linfeng;Xiao, Peng;Sun, Sheng;Li, Yuzhi;Song, Wei;Gao, Peixiong;Peng, Junbiao;
10:1:18:10 Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability
DOI:10.1063/1.4891426 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lai, Hsin-Cheng;Pei, Zingway;Jian, Jyun-Ruri;Tzeng, Bo-Jie;
10:1:18:11 Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature
DOI:10.1063/1.4899144 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Ahn, Byung Du;Park, Jin-Seong;Chung, K. B.;
10:1:18:12 High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric
DOI:10.1016/j.tsf.2012.06.066 JN:THIN SOLID FILMS PY:2012
TC:11 AU: Chen, Rongsheng;Zhou, Wei;Zhang, Meng;Kwok, Hoi Sing;
10:1:19:1 High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment
DOI:10.1063/1.4718022 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Nayak, Pradipta K.;Hedhili, M. N.;Cha, Dongkyu;Alshareef, H. N.;
10:1:19:2 Effects of low-temperature (120 degrees C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors
DOI:10.1063/1.4904843 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kim, Jae-Sung;Oh, Byung Su;Piao, Mingxing;Joo, Min-Kyu;Jang, Ho-Kyun;Ahn, Seung-Eon;Kim, Gyu-Tae;
10:1:19:3 Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors
DOI:10.1063/1.4868630 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Kim, Jae-Sung;Joo, Min-Kyu;Piao, Ming Xing;Ahn, Seung-Eon;Choi, Yong-Hee;Jang, Ho-Kyun;Kim, Gyu-Tae;
10:1:19:4 Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
DOI:10.1016/j.apsusc.2013.07.007 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Pu, Haifeng;Zhou, Qianfei;Yue, Lan;Zhang, Qun;
10:1:19:5 Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor
DOI:10.1063/1.4869761 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Qian, L. X.;Lai, P. T.;Tang, W. M.;
10:1:19:6 Effect of O-2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films
DOI:10.1016/j.tsf.2013.07.084 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Liu, P.;Chen, T. P.;Liu, Z.;Tan, C. S.;Leong, K. C.;
10:1:19:7 Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors
DOI:10.1016/j.tsf.2013.09.024 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Park, So Jeong;Jeon, Dae-Young;Ahn, Seung-Eon;Jeon, Sanghun;Montes, Laurent;Kim, Gyu-Tae;Ghibaudo, Gerard;
10:1:19:8 Low frequency noise in long channel amorphous In-Ga-Zn-O thin film transistors
DOI:10.1063/1.3490193 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Fung, Tze-Ching;Baek, Gwanghyeon;Kanicki, Jerzy;
10:1:19:9 A study on H-2 plasma treatment effect on a-IGZO thin film transistor
DOI:10.1557/jmr.2012.199 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:10 AU: Kim, Jihoon;Bang, Seokhwan;Lee, Seungjun;Shin, Seokyoon;Park, Joohyun;Seo, Hyungtak;Jeon, Hyeongtag;
10:1:19:10 High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment (vol 100, 202106, 2012)
DOI:10.1063/1.4902402 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nayak, Pradipta K.;Hedhili, M. N.;Cha, Dongkyu;Alshareef, H. N.;
10:1:19:11 In-Ga-Zn-O thin film transistor with HfO2 gate insulator prepared using various O-2/(Ar + O-2) gas ratios
DOI:10.1016/j.materresbull.2012.04.094 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Jo, Young Je;Lee, In-Hwan;Kwak, Joon Seop;
10:1:19:12 Oxygen Gas Dependence of IGZO Thin Film for TFT Channel Layer
DOI:10.1080/15421406.2011.599748 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2011
TC:2 AU: Lee, Kyu-Ho;Jung, Yu-Sup;Kim, Kyung-Hwan;
10:1:20:1 High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering
DOI:10.1021/am302004j JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:14 AU: Walker, Daniel E.;Major, Marton;Baghaie Yazdi, Mehrdad;Klyszcz, Andreas;Haeming, Marc;Bonrad, Klaus;Melzer, Christian;Donner, Wolfgang;von Seggern, Heinz;
10:1:20:2 Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability
DOI:10.1021/am301342x JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:21 AU: Kim, Hyun-Suk;Park, Joon Seok;Jeong, Hyun-Kwang;Son, Kyoung Seok;Kim, Tae Sang;Seon, Jong-Baek;Lee, Eunha;Chung, Jae Gwan;Kim, Dae Hwan;Ryu, Myungkwan;Lee, Sang Yoon;
10:1:20:3 Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors
DOI:10.1016/j.tsf.2010.04.006 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Choi, Yuri;Kim, Gun Hee;Jeong, Woong Hee;Kim, Hyun Jae;Chin, Byung Doo;Yu, Jae-Woong;
10:1:20:4 Damage-Free Back Channel Wet-Etch Process in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer
DOI:10.1021/am501817y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Luo, Dongxiang;Zhao, Mingjie;Xu, Miao;Li, Min;Chen, Zikai;Wang, Lang;Zou, Jianhua;Tao, Hong;Wang, Lei;Peng, Junbiao;
10:1:20:5 Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications
DOI:10.1016/j.ceramint.2013.12.127 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Kim, Kyeong-Ah;Bak, Jun-Yong;Choi, Jeong-Seon;Yoon, Sung-Min;
10:1:20:6 Characteristics of flexographic printed indium-zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors
DOI:10.1016/j.apsusc.2014.09.106 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Dilfer, Stefan;Hoffmann, Rudolf C.;Doersam, Edgar;
10:1:20:7 Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors
DOI:10.1116/1.4789423 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:5 AU: Park, Sang-Hee Ko;Ryu, Min-Ki;Oh, Himchan;Hwang, Chi-Sun;Jeon, Jae-Hong;Yoon, Sung-Min;
10:1:21:1 Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique
DOI:10.1063/1.3455072 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Kimura, Mutsumi;Kamiya, Toshio;Nakanishi, Takashi;Nomura, Kenji;Hosono, Hideo;
10:1:21:2 Electron traps in amorphous In-Ga-Zn-O thin films studied by isothermal capacitance transient spectroscopy
DOI:10.1063/1.3691923 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Hayashi, Kazushi;Hino, Aya;Morita, Shinya;Yasuno, Satoshi;Okada, Hiroshi;Kugimiya, Toshihiro;
10:1:21:3 Transient photoconductivity responses in amorphous In-Ga-Zn-O films
DOI:10.1063/1.4751433 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Yasuno, Satoshi;Kita, Takashi;Morita, Shinya;Kugimiya, Toshihiro;Hayashi, Kazushi;Sumie, Shingo;
10:1:21:4 Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
DOI:10.1063/1.3517506 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Zan, Hsiao-Wen;Chen, Wei-Tsung;Hsueh, Hsiu-Wen;Kao, Shih-Chin;Ku, Ming-Che;Tsai, Chuang-Chuang;Meng, Hsin-Fei;
10:1:21:5 Improvement of Electrical Performance of InGaZnO/HfSiO TFTs with 248-nm Excimer Laser Annealing
DOI:10.1007/s13391-014-3327-z JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Huang, Han-Yuan;Wang, Shui-Jinn;Wu, Chien-Hung;Lu, Chien-Yuan;
10:1:21:6 Correlation of photoconductivity response of amorphous In-Ga-Zn-O films with transistor performance using microwave photoconductivity decay method
DOI:10.1063/1.3561755 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Yasuno, Satoshi;Kugimiya, Toshihiro;Morita, Shinya;Miki, Aya;Ojima, Futoshi;Sumie, Shingo;
10:1:21:7 Steady-state photoconductivity of amorphous In-Ga-Zn-O
DOI:10.1016/j.tsf.2009.10.129 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Lee, Dong Hee;Kawamura, Ken-ichi;Nomura, Kenji;Yanagi, Hiroshi;Kamiya, Toshio;Hirano, Masahiro;Hosono, Hideo;
10:1:21:8 Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
DOI:10.1063/1.4798519 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Fujii, Mami;Ishikawa, Yasuaki;Ishihara, Ryoichi;van der Cingel, Johan;Mofrad, Mohammad R. T.;Horita, Masahiro;Uraoka, Yukiharu;
10:1:21:9 Large area photodetector based on microwave cavity perturbation techniques
DOI:10.1063/1.4891518 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Braggio, C.;Carugno, G.;Lombardi, A.;Ruoso, G.;Sirugudu, R. K.;
10:1:21:10 Low-cost Xe sputtering of amorphous In-Ga-Zn-O thin-film transistors by rotation magnet sputtering incorporating a Xe recycle-and-supply system
DOI:10.1116/1.4835775 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Goto, Tetsuya;Ishii, Hidekazu;Sugawa, Shigetoshi;Ohmi, Tadahiro;
10:1:22:1 High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors
DOI:10.1007/s11664-014-3211-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Seo, T. W.;Kim, Hyun-Suk;Lee, Kwang-Ho;Chung, Kwun-Bum;Park, Jin-Seong;
10:1:22:2 Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistors
DOI:10.1016/j.tsf.2010.08.082 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Kim, Won;Bang, Jung-Hwan;Uhm, Hyun-Seok;Lee, Sang-Hyuk;Park, Jin-Seok;
10:1:22:3 Role of O-2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process
DOI:10.1016/j.tsf.2011.09.003 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Kim, Won;Lee, Sang-Hyuk;Bang, Jung-Hwan;Uhm, Hyun-Seok;Park, Jin-Seok;
10:1:22:4 Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures
DOI:10.1016/j.tsf.2013.04.030 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Kim, Chang Eun;Yun, Ilgu;
10:1:22:5 Effects of nitrogen doping on device characteristics of InSnO thin film transistor
DOI:10.1063/1.3673556 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Kim, Chang Eun;Yun, Ilgu;
10:1:22:6 Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress
DOI:10.1063/1.4800172 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Jo, Chunhyung;Jun, Sungwoo;Kim, Woojoon;Hur, Inseok;Bae, Hagyoul;Choi, Sung-Jin;Kim, Dae Hwan;Kim, Dong Myong;
10:1:22:7 Characterization of density-of-states in indium zinc oxide thin-film transistor from temperature stress studies
DOI:10.1016/j.mssp.2014.06.046 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Ding, Xingwei;Zhang, Jianhua;Shi, Weimin;Zhang, Hao;Huang, Chuanxin;Li, Jun;Jiang, Xueyin;Zhang, Zhilin;
10:1:22:8 Deposition and surface treatment of Ag-embedded indium tin oxide by plasma processing
DOI:10.1016/j.tsf.2013.04.110 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Kim, Jun Young;Kim, Jae-Kwan;Kim, Ja-Yeon;Kwon, Min-Ki;Yoon, Jae-Sik;Lee, Ji-Myon;
10:1:22:9 Electrical properties of top-gate oxide thin-film transistors with double-channel layers
DOI:10.1016/j.jcrysgro.2011.01.094 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Cheong, Woo-Seok;Chung, Sung Mook;Shin, Jae-Hun;Hwang, Chi-Sun;
10:1:23:1 Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes
DOI:10.1063/1.3694273 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Jeong, Jaewook;Lee, Gwang Jun;Kim, Joonwoo;Choi, Byeongdae;
10:1:23:2 Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method
DOI:10.1063/1.3675876 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Jeong, Jaewook;Kim, Joonwoo;Lee, Gwang Jun;Choi, Byeong-Dae;
10:1:23:3 Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors
DOI:10.1016/j.tsf.2014.02.026 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Kim, Jae-Sung;Joo, Min-Kyu;Piao, Ming Xing;Ahn, Seung-Eon;Choi, Yong-Hee;Na, Junhong;Shin, Minju;Han, Man-Joong;Jang, Ho-Kyun;Kim, Gyu-Tae;
10:1:23:4 High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
DOI:10.1063/1.4789997 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Wu, Hung-Chi;Chien, Chao-Hsin;
10:1:23:5 Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode
DOI:10.1063/1.4895385 JN:AIP ADVANCES PY:2014
TC:1 AU: Jeong, Jaewook;Kim, Joonwoo;Noh, Hee-Yeon;Jeong, Soon Moon;Kim, Jung-Hye;Myung, Sung;
10:1:23:6 Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements
DOI:10.1063/1.4819886 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Jeong, Jaewook;Lee, Gwang Jun;Kim, Joonwoo;Jeong, Soon Moon;Kim, Jung-Hye;
10:1:23:7 Short channel device performance of amorphous InGaZnO thin film transistor
DOI:10.1063/1.3623426 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Jeon, Sanghun;Benayad, Anass;Ahn, Seung-Eon;Park, Sungho;Song, Ihun;Kim, Changjung;Chung, U-In;
10:1:23:8 Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes
DOI:10.1063/1.3490245 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Seo, David;Jeon, Sanghun;Seo, Sunae;Song, Ihun;Kim, Changjung;Park, Sungho;Harris, James S.;Chung, U. -In;
10:1:24:1 Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistors
DOI:10.1002/adfm.201001089 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:37 AU: Adamopoulos, George;Bashir, Aneeqa;Gillin, William P.;Georgakopoulos, Stamatis;Shkunov, Maxim;Baklar, Mohamed A.;Stingelin, Natalie;Bradley, Donal D. C.;Anthopoulos, Thomas D.;
10:1:24:2 Leidenfrost temperature related CVD-like growth mechanism in ZnO-TFTs deposited by pulsed spray pyrolysis
DOI:10.1016/j.jcrysgro.2012.10.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Ortel, Marlis;Wagner, Veit;
10:1:24:3 Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates
DOI:10.1088/0957-4484/24/19/195603 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Zhang, R. H.;Slamovich, E. B.;Handwerker, C. A.;
10:1:24:4 Chemical composition and temperature dependent performance of ZnO-thin film transistors deposited by pulsed and continuous spray pyrolysis
DOI:10.1063/1.4846736 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Ortel, Marlis;Balster, Torsten;Wagner, Veit;
10:1:24:5 Water induced zinc oxide thin film formation and its transistor performance
DOI:10.1039/c3tc32311k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Chang, Jingjing;Chang, Kok Leong;Chi, Chunyan;Zhang, Jie;Wua, Jishan;
10:1:24:6 Pulsed Direct Flame Deposition and Thermal Annealing of Transparent Amorphous Indium Zinc Oxide Films As Active Layers in Field Effect Transistors
DOI:10.1021/am501837u JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Kilian, Daniel;Polster, Sebastian;Vogeler, Isabell;Jank, Michael P. M.;Frey, Lothar;Peukert, Wolfgang;
10:1:25:1 The effect of annealing on amorphous indium gallium zinc oxide thin film transistors
DOI:10.1016/j.tsf.2010.02.073 JN:THIN SOLID FILMS PY:2010
TC:19 AU: Bae, Hyeon-seok;Kwon, Jae-Hong;Chang, Seongpil;Chung, Myung-Ho;Oh, Tae-Yeon;Park, Jung-Ho;Lee, Sang Yeol;Pak, James Jungho;Ju, Byeong-Kwon;
10:1:25:2 Effect of thermal annealing on the properties of transparent conductive In-Ga-Zn oxide thin films
DOI:10.1116/1.4861352 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:3 AU: Li, Ling;Fan, Lina;Li, Yanhuai;Song, Zhongxiao;Ma, Fei;Liu, Chunliang;
10:1:25:3 Dependence of annealing on stability of transparent amorphous InGaZnO thin film transistor
DOI:10.1016/j.mssp.2013.02.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Li, Xifeng;Xin, Enlong;Chen, Longlong;Shi, Jifeng;Li, Chunya;Zhang, Jianhua;
10:1:25:4 Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals
DOI:10.1063/1.3619196 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Gadre, Mandar J.;Alford, T. L.;
10:1:25:5 Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors
DOI:10.1116/1.4731257 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:7 AU: Bak, Jun Yong;Yoon, Sung Min;Yang, Shinhyuk;Kim, Gi Heon;Park, Sang-Hee Ko;Hwang, Chi-Sun;
10:1:25:6 Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films
DOI:10.1016/j.materresbull.2012.04.050 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:10 AU: Thakur, Anup;Kang, Se-Jun;Baik, Jae Yoon;Yoo, Hanbyeol;Lee, Ik-Jae;Lee, Han-Koo;Jung, Seonghoon;Park, Jaehun;Shin, Hyun-Joon;
10:1:25:7 Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature
DOI:10.1016/j.materresbull.2012.04.134 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:2 AU: Kim, Ji-Hong;Kim, Jae-Won;Roh, Ji-Hyung;Lee, Kyung-Ju;Do, Kang-Min;Shin, Ju-Hong;Koo, Sang-Mo;Moon, Byung-Moo;
10:1:26:1 High carrier mobility and electrical stability under negative bias illumination stress of ZnO thin-film transistors with N2O plasma treated HfOx gate dielectrics
DOI:10.1063/1.4820944 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Chen, Wei-Yu;Jeng, Jiann-Shing;Chen, Jen-Sue;
10:1:26:2 Role of high-k gate insulators for oxide thin film transistors
DOI:10.1016/j.tsf.2009.09.165 JN:THIN SOLID FILMS PY:2010
TC:29 AU: Lee, Sang Yeol;Chang, Seongpil;Lee, Jae-Sang;
10:1:26:3 Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy
DOI:10.1016/j.apsusc.2011.07.086 JN:APPLIED SURFACE SCIENCE PY:2011
TC:11 AU: Huang, H. Q.;Liu, F. J.;Sun, J.;Zhao, J. W.;Hu, Z. F.;Li, Z. J.;Zhang, X. Q.;Wang, Y. S.;
10:1:26:4 Investigation of the drain current shift in ZnO thin film transistors
DOI:10.1063/1.3525998 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Abdel-Motaleb, Ibrahim;Shetty, Neeraj;Leedy, Kevin;Cortez, Rebecca;
10:1:26:5 Illumination instabilities in ZnO/HfO2 thin-film transistors and influence of grain boundary charge
DOI:10.1557/jmr.2012.173 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:4 AU: Siddiqui, Jeffrey J.;Phillips, Jamie D.;Leedy, Kevin;Bayraktaroglu, Burhan;
10:1:26:6 Negative gate-bias instability of ZnO thin-film transistors studied by current-voltage and capacitance-voltage analyses
DOI:10.1116/1.4901505 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Liu, Yurong;Mo, Shufeng;Yao, Ruohe;Lai, Pui To;
10:1:27:1 Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing
DOI:10.1016/j.tsf.2009.10.132 JN:THIN SOLID FILMS PY:2010
TC:36 AU: Kikuchi, Yutomo;Nomura, Kenji;Yanagi, Hiroshi;Kamiya, Toshio;Hirano, Masahiro;Hosono, Hideo;
10:1:27:2 Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
DOI:10.1063/1.4832076 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Hanyu, Yuichiro;Domen, Kay;Nomura, Kenji;Hiramatsu, Hidenori;Kumomi, Hideya;Hosono, Hideo;Kamiya, Toshio;
10:1:27:3 Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide
DOI:10.1063/1.4768216 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Choi, Seung-Ha;Jung, Woo-Shik;Park, Jin-Hong;
10:1:27:4 Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
DOI:10.1016/j.tsf.2011.10.062 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Ide, Keisuke;Kikuchi, Yutomo;Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo;
10:1:27:5 Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer
DOI:10.1063/1.4862320 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Jeong, Ho-young;Lee, Bok-young;Lee, Young-jang;Lee, Jung-il;Yang, Myoung-su;Kang, In-byeong;Mativenga, Mallory;Jang, Jin;
10:1:28:1 Electrohydrodynamic Jet-Printed Zinc-Tin Oxide TFTs and Their Bias Stability
DOI:10.1021/am5009826 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Lee, Yong Gu;Choi, Woon-Seop;
10:1:28:2 Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors
DOI:10.1063/1.3691177 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Lee, Sangkyu;Kim, Jeonghyun;Choi, Junghyun;Park, Hyunjung;Ha, Jaehwan;Kim, Yongkwan;Rogers, John A.;Paik, Ungyu;
10:1:28:3 Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force
DOI:10.1063/1.4837696 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Sakaike, Kohei;Akazawa, Muneki;Nakamura, Shogo;Higashi, Seiichiro;
10:1:28:4 Inkjet-Printed In2O3 Thin-Film Transistor below 200 degrees C
DOI:10.1021/am4025774 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Lee, Jun Seok;Kwack, Young-Jin;Choi, Woon-Seop;
10:1:28:5 Effect of electrical and mechanical stresses of low temperature a-Si: H thin film transistors fabricated on polyimide and glass substrates
DOI:10.1016/j.tsf.2012.09.038 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Huang, Jung-Jie;Chen, Chao-Nan;
10:1:29:1 Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO
DOI:10.1007/s11664-014-3083-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:1 AU: Lee, Jin-Woo;Kwon, Hyeon-Min;Kim, Myeong-Ho;Lee, Seung-Ryul;Kim, Young-Bae;Choi, Duck-Kyun;
10:1:29:2 Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
DOI:10.1038/NMAT3256 JN:NATURE MATERIALS PY:2012
TC:66 AU: Jeon, Sanghun;Ahn, Seung-Eon;Song, Ihun;Kim, Chang Jung;Chung, U-In;Lee, Eunha;Yoo, Inkyung;Nathan, Arokia;Lee, Sungsik;Robertson, John;Kim, Kinam;
10:1:29:3 Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications
DOI:10.1021/am1009088 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:19 AU: Jeon, Sanghun;Park, Sungho;Song, Ihun;Hur, Ji-Hyun;Park, Jaechul;Kim, Hojung;Kim, Sunil;Kim, Sangwook;Yin, Huaxiang;Chung, U-In;Lee, Eunha;Kim, Changjung;
10:1:30:1 Solution-Based TiO2-Polymer Composite Dielectric for Low Operating Voltage OTFTs
DOI:10.1021/ja104840b JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:15 AU: Kim, Joohee;Lim, Sung Hee;Kim, Young Sang;
10:1:30:2 Solution-Based TiO2-Polymer Composite Dielectric for Low Operating Voltage OTFTs (vol 132, pg 14721, 2010)
DOI:10.1021/ja111018c JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:0 AU: Kim, Joohee;Lim, Sung Hee;Kim, Youn Sang;
10:1:30:3 Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance
DOI:10.1016/j.synthmet.2011.05.002 JN:SYNTHETIC METALS PY:2011
TC:9 AU: Chen, Liang-Hsiang;Lin, Pang;Ho, Jia-Chong;Lee, Cheng-Chung;Kim, Choongik;Chen, Ming-Chou;
10:1:31:1 Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics
DOI:10.1116/1.3455494 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:8 AU: Triska, J.;Conley, J. F., Jr.;Presley, R.;Wager, J. F.;
10:1:31:2 Comparison of wet and dry etching of zinc indium oxide for thin film transistors with an inverted gate structure
DOI:10.1116/1.3668090 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:0 AU: Marrs, Michael A.;Vogt, Bryan D.;Raupp, Gregory B.;
10:1:31:3 Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
DOI:10.1116/1.3609254 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Waggoner, T.;Triska, J.;Hoshino, K.;Wager, J. F.;Conley, J. F., Jr.;
10:2:1 ZnS nanostructures: From synthesis to applications
DOI:10.1016/j.pmatsci.2010.10.001 JN:PROGRESS IN MATERIALS SCIENCE PY:2011
TC:364 AU: Fang, Xiaosheng;Zhai, Tianyou;Gautam, Ujjal K.;Li, Liang;Wu, Limin;Bando, Yoshio;Golberg, Dmitri;
10:2:2 Recent Developments in One-Dimensional Inorganic Nanostructures for Photodetectors
DOI:10.1002/adfm.201001259 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:118 AU: Zhai, Tianyou;Li, Liang;Wang, Xi;Fang, Xiaosheng;Bando, Yoshio;Golberg, Dmitri;
10:2:3 ZnS Nanostructure Arrays: A Developing Material Star
DOI:10.1002/adma.201003624 JN:ADVANCED MATERIALS PY:2011
TC:148 AU: Fang, Xiaosheng;Wu, Limin;Hu, Linfeng;
10:2:4 Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors
DOI:10.1002/adma.201000144 JN:ADVANCED MATERIALS PY:2010
TC:121 AU: Li, Liang;Wu, Peicai;Fang, Xiaosheng;Zhai, Tianyou;Dai, Lun;Liao, Meiyong;Koide, Yasuo;Wang, Hongqiang;Bando, Yoshio;Golberg, Dmitri;
10:2:5 New Ultraviolet Photodetector Based on Individual Nb2O5 Nanobelts
DOI:10.1002/adfm.201100743 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:111 AU: Fang, Xiaosheng;Hu, Linfeng;Huo, Kaifu;Gao, Biao;Zhao, Lijuan;Liao, Meiyong;Chu, Paul K.;Bando, Yoshio;Golberg, Dmitri;
10:2:6 CdS Nanoscale Photodetectos
DOI:10.1002/adma.201304621 JN:ADVANCED MATERIALS PY:2014
TC:24 AU: Deng, Kaimo;Li, Liang;
10:2:7 Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors
DOI:10.1021/nn9012466 JN:ACS NANO PY:2010
TC:115 AU: Zhai, Tianyou;Fang, Xiaosheng;Liao, Meiyong;Xu, Xijin;Li, Liang;Liu, Baodan;Koide, Yasuo;Ma, Ying;Yao, Jiannian;Bando, Yoshio;Golberg, Dmitri;
10:2:8 An Optimized Ultraviolet-A Light Photodetector with Wide-Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt
DOI:10.1002/adma.201200512 JN:ADVANCED MATERIALS PY:2012
TC:130 AU: Hu, Linfeng;Yan, Jian;Liao, Meiyong;Xiang, Hongjun;Gong, Xingao;Zhang, Lide;Fang, Xiaosheng;
10:2:9 Direct Growth of Aligned Zinc Oxide Nanorods on Paper Substrates for Low-Cost Flexible Electronics
DOI:10.1002/adma.201001289 JN:ADVANCED MATERIALS PY:2010
TC:120 AU: Manekkathodi, Afsal;Lu, Ming-Yen;Wang, Chun Wen;Chen, Lih-Juann;
10:2:10 An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability
DOI:10.1002/adfm.200901878 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:106 AU: Fang, Xiaosheng;Bando, Yoshio;Liao, Meiyong;Zhai, Tianyou;Gautam, Ujjal K.;Li, Liang;Koide, Yasuo;Golberg, Dmitri;
10:2:11 Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts
DOI:10.1002/adma.201000278 JN:ADVANCED MATERIALS PY:2010
TC:109 AU: Hu, Youfan;Zhou, Jun;Yeh, Ping-Hung;Li, Zhou;Wei, Te-Yu;Wang, Zhong Lin;
10:2:12 Ultrahigh External Quantum Efficiency from Thin SnO2 Nanowire Ultraviolet Photodetectors
DOI:10.1002/smll.201002379 JN:SMALL PY:2011
TC:90 AU: Hu, Linfeng;Yan, Jian;Liao, Meiyong;Wu, Limin;Fang, Xiaosheng;
10:2:13 Metal sulfide nanostructures: synthesis, properties and applications in energy conversion and storage
DOI:10.1039/c1jm13879k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:117 AU: Lai, Chen-Ho;Lu, Ming-Yen;Chen, Lih-Juann;
10:2:14 Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p-n Junctions
DOI:10.1002/adma.201003156 JN:ADVANCED MATERIALS PY:2011
TC:91 AU: Bie, Ya-Qing;Liao, Zhi-Min;Zhang, Hong-Zhou;Li, Guang-Ru;Ye, Yu;Zhou, Yang-Bo;Xu, Jun;Qin, Zhi-Xin;Dai, Lun;Yu, Da-Peng;
10:2:15 One-Dimensional CdS Nanostructures: A Promising Candidate for Optoelectronics
DOI:10.1002/adma.201300244 JN:ADVANCED MATERIALS PY:2013
TC:36 AU: Li, Huiqiao;Wang, Xi;Xu, Junqi;Zhang, Qi;Bando, Yoshio;Golberg, Dmitri;Ma, Ying;Zhai, Tianyou;
10:2:16 High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates
DOI:10.1002/adfm.201101319 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:90 AU: Bai, Suo;Wu, Weiwei;Qin, Yong;Cui, Nuanyang;Bayerl, Dylan J.;Wang, Xudong;
10:2:17 ZnO Hollow Spheres with Double-Yolk Egg Structure for High-Performance Photocatalysts and Photodetectors
DOI:10.1002/adma.201201139 JN:ADVANCED MATERIALS PY:2012
TC:77 AU: Wang, Xi;Liao, Meiyong;Zhong, Yeteng;Zheng, Jian Yao;Tian, Wei;Zhai, Tianyou;Zhi, Chunyi;Ma, Ying;Yao, Jiannian;Bando, Yoshio;Golberg, Dmitri;
10:2:18 Thin SnO2 Nanowires with Uniform Diameter as Excellent Field Emitters: A Stability of More Than 2400 Minutes
DOI:10.1002/adfm.201102196 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:56 AU: Fang, Xiaosheng;Yan, Jian;Hu, Linfeng;Liu, Hui;Lee, Pooi See;
10:2:19 Recent progress of one-dimensional ZnO nanostructured solar cells
DOI:10.1016/j.nanoen.2011.10.005 JN:NANO ENERGY PY:2012
TC:66 AU: Li, Liang;Zhai, Tianyou;Bando, Yoshio;Golberg, Dmitri;
10:2:20 ZnO Hollow-Sphere Nanofilm-Based High-Performance and Low-Cost Photodetector
DOI:10.1002/smll.201100694 JN:SMALL PY:2011
TC:96 AU: Chen, Min;Hu, Linfeng;Xu, Jiaxi;Liao, Meiyong;Wu, Limin;Fang, Xiaosheng;
10:2:21 Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In2Ge2O7 Nanobelts
DOI:10.1002/adma.201002608 JN:ADVANCED MATERIALS PY:2010
TC:86 AU: Li, Liang;Lee, Pooi See;Yan, Chaoyi;Zhai, Tianyou;Fang, Xiaosheng;Liao, Meiyong;Koide, Yasuo;Bando, Yoshio;Golberg, Dmitri;
10:2:22 20 mu s Photocurrent Response from Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires
DOI:10.1021/nl100483v JN:NANO LETTERS PY:2010
TC:65 AU: Kung, Sheng-Chin;van der Veer, Wytze E.;Yang, Fan;Donavan, Keith C.;Penner, Reginald M.;
10:2:23 Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time
DOI:10.1063/1.3297905 JN:APPLIED PHYSICS LETTERS PY:2010
TC:65 AU: Yan, Chaoyi;Singh, Nandan;Lee, Pooi See;
10:2:24 Synthesis and photoluminescence properties of string-like ZnO/SnO nanowire/nanosheet nano-heterostructures
DOI:10.1016/j.jallcom.2013.04.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Lan, Changyong;Gong, Jiangfeng;Jiang, Yuwen;
10:2:25 WO3 nanowires on carbon papers: electronic transport, improved ultraviolet-light photodetectors and excellent field emitters
DOI:10.1039/c0jm04557h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:42 AU: Li, Liang;Zhang, Yong;Fang, Xiaosheng;Zhai, Tianyou;Liao, Meiyong;Sun, Xueliang;Koide, Yasuo;Bando, Yoshio;Golberg, Dmitri;
10:2:26 Growth and Device Application of CdSe Nanostructures
DOI:10.1002/adfm.201103088 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:35 AU: Zhao, Lijuan;Hu, Linfeng;Fang, Xiaosheng;
10:2:27 High-Performance Organic-Inorganic Hybrid Photodetectors Based on P3HT:CdSe Nanowire Heterojunctions on Rigid and Flexible Substrates
DOI:10.1002/adfm.201201786 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:54 AU: Wang, Xianfu;Song, Weifeng;Liu, Bin;Chen, Gui;Chen, Di;Zhou, Chongwu;Shen, Guozhen;
10:2:28 A Self-Powered ZnO-Nanorod/CuSCN UV Photodetector Exhibiting Rapid Response
DOI:10.1002/adma.201204488 JN:ADVANCED MATERIALS PY:2013
TC:58 AU: Hatch, Sabina M.;Briscoe, Joe;Dunn, Steve;
10:2:29 Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector
DOI:10.1063/1.4724208 JN:APPLIED PHYSICS LETTERS PY:2012
TC:39 AU: Fu, Xue-Wen;Liao, Zhi-Min;Zhou, Yang-Bo;Wu, Han-Chun;Bie, Ya-Qing;Xu, Jun;Yu, Da-Peng;
10:2:30 Monolayer Graphene Film on ZnO Nanorod Array for High-Performance Schottky Junction Ultraviolet Photodetectors
DOI:10.1002/smll.201203188 JN:SMALL PY:2013
TC:50 AU: Nie, Biao;Hu, Ji-Gang;Luo, Lin-Bao;Xie, Chao;Zeng, Long-Hui;Lv, Peng;Li, Fang-Ze;Jie, Jian-Sheng;Feng, Mei;Wu, Chun-Yan;Yu, Yong-Qiang;Yu, Shu-Hong;
10:2:31 Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors
DOI:10.1063/1.3285178 JN:APPLIED PHYSICS LETTERS PY:2010
TC:51 AU: Wei, Te-Yu;Huang, Chi-Te;Hansen, Benjamin J.;Lin, Yi-Feng;Chen, Lih-Juann;Lu, Shih-Yuan;Wang, Zhong Lin;
10:2:32 High-Performance Single CdS Nanowire (Nanobelt) Schottky Junction Solar Cells with Au/Graphene Schottky Electrodes
DOI:10.1021/am1007672 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:50 AU: Ye, Yu;Dai, Yu;Dai, Lun;Shi, Zujin;Liu, Nan;Wang, Fei;Fu, Lei;Peng, Ruomin;Wen, Xiaonan;Chen, Zhijian;Liu, Zhongfan;Qin, Guogang;
10:2:33 Self-powered high performance photodetectors based on CdSe nanobelt/graphene Schottky junctions
DOI:10.1039/c2jm15913a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:38 AU: Jin, Weifeng;Ye, Yu;Gan, Lin;Yu, Bin;Wu, Peicai;Dai, Yu;Meng, Hu;Guo, Xuefeng;Dai, Lun;
10:2:34 Efficient Assembly of Bridged beta-Ga2O3 Nanowires for Solar-Blind Photodetection
DOI:10.1002/adfm.201001140 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:55 AU: Li, Yanbo;Tokizono, Takero;Liao, Meiyong;Zhong, Miao;Koide, Yasuo;Yamada, Ichiro;Delaunay, Jean-Jacques;
10:2:35 Single-Crystalline Sb2Se3 Nanowires for High-Performance Field Emitters and Photodetectors
DOI:10.1002/adma.201002097 JN:ADVANCED MATERIALS PY:2010
TC:46 AU: Zhai, Tianyou;Ye, Mingfu;Li, Liang;Fang, Xiaosheng;Liao, Meiyong;Li, Yongfang;Koide, Yasuo;Bando, Yoshio;Golberg, Dmitri;
10:2:36 High-Performance NiCo2O4 Nanofilm Photodetectors Fabricated by an Interfacial Self-Assembly Strategy
DOI:10.1002/adma.201004109 JN:ADVANCED MATERIALS PY:2011
TC:78 AU: Hu, Linfeng;Wu, Limin;Liao, Meiyong;Fang, Xiaosheng;
10:2:37 A CdSe Nanowire/Quantum Dot Hybrid Architecture for Improving Solar Cell Performance
DOI:10.1002/adfm.200902372 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:64 AU: Yu, Yanghai;Kamat, Prashant V.;Kuno, Masaru;
10:2:38 Impurity-Dependent Photoresponse Properties in Single CdSe Nanobelt Photodetectors
DOI:10.1021/am200043c JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:25 AU: Wu, Peicai;Dai, Yu;Sun, Tuo;Ye, Yu;Meng, Hu;Fang, Xiaolong;Yu, Bin;Dai, Lun;
10:2:39 Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts
DOI:10.1002/adma.201001413 JN:ADVANCED MATERIALS PY:2010
TC:57 AU: Li, Liang;Fang, Xiaosheng;Zhai, Tianyou;Liao, Meiyong;Gautam, Ujjal K.;Wu, Xingcai;Koide, Yasuo;Bando, Yoshio;Golberg, Dmitri;
10:2:40 Three-dimensional heterostructured ZnSe nanoparticles/Si wire arrays with enhanced photodetection and photocatalytic performances
DOI:10.1039/c2tc00604a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:4 AU: Chen, Yi-Hsin;Li, Wun-Shan;Liu, Chun-Yi;Wang, Chiu-Yen;Chang, Yu-Cheng;Chen, Lih-Juann;
10:2:41 Assembly of Three-Dimensional Hetero-Epitaxial ZnO/ZnS Core/Shell Nanorod and Single Crystalline Hollow ZnS Nanotube Arrays
DOI:10.1021/nn3024514 JN:ACS NANO PY:2012
TC:42 AU: Huang, Xing;Wang, Meng;Willinger, Marc-Georg;Shao, Lidong;Su, Dang Sheng;Meng, Xiang-Min;
10:2:42 Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes
DOI:10.1039/c2jm34869a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:23 AU: Wu, Di;Jiang, Yang;Zhang, Yugang;Yu, Yongqiang;Zhu, Zhifeng;Lan, Xinzheng;Li, Fangze;Wu, Chunyan;Wang, Li;Luo, Linbao;
10:2:43 Carbon Nanotube and CdSe Nanobelt Schottky Junction Solar Cells
DOI:10.1021/nl101888y JN:NANO LETTERS PY:2010
TC:44 AU: Zhang, Luhui;Jia, Yi;Wang, Shanshan;Li, Zhen;Ji, Chunyan;Wei, Jinquan;Zhu, Hongwei;Wang, Kunlin;Wu, Dehai;Shi, Enzheng;Fang, Ying;Cao, Anyuan;
10:2:44 High-Performance UV-Visible-NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3 Nanostructures
DOI:10.1021/nl302142g JN:NANO LETTERS PY:2012
TC:34 AU: Wang, Zhenxing;Safdar, Muhammad;Jiang, Chao;He, Jun;
10:2:45 ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed
DOI:10.1063/1.3660580 JN:APPLIED PHYSICS LETTERS PY:2011
TC:49 AU: Cheng, Gang;Wu, Xinghui;Liu, Bing;Li, Bing;Zhang, Xingtang;Du, Zuliang;
10:2:46 High-gain visible-blind UV photodetectors based on chlorine-doped n-type ZnS nanoribbons with tunable optoelectronic properties
DOI:10.1039/c1jm11408e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:40 AU: Yu, Yongqiang;Jie, Jiansheng;Jiang, Peng;Wang, Li;Wu, Chunyan;Peng, Qiang;Zhang, Xiwei;Wang, Zhi;Xie, Chao;Wu, Di;Jiang, Yang;
10:2:47 Low-Dimensional Nanostructure Ultraviolet Photodetectors
DOI:10.1002/adma.201301802 JN:ADVANCED MATERIALS PY:2013
TC:50 AU: Peng, Lin;Hu, Linfeng;Fang, Xiaosheng;
10:2:48 Bandgap-Graded CdSxSe1x Nanowires for High-Performance Field-Effect Transistors and Solar Cells
DOI:10.1002/adma.201204434 JN:ADVANCED MATERIALS PY:2013
TC:20 AU: Li, Liang;Lu, Hao;Yang, Zongyin;Tong, Limin;Bando, Yoshio;Golberg, Dmitri;
10:2:49 Self-powered ultraviolet photodetector based on a single Sb-doped ZnO nanobelt
DOI:10.1063/1.3524231 JN:APPLIED PHYSICS LETTERS PY:2010
TC:50 AU: Yang, Ya;Guo, Wen;Qi, Junjie;Zhao, Jing;Zhang, Yue;
10:2:50 Multicolor graphene nanoribbon/semiconductor nanowire heterojunction light-emitting diodes
DOI:10.1039/c1jm11441g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:27 AU: Ye, Yu;Gan, Lin;Dai, Lun;Meng, Hu;Wei, Feng;Dai, Yu;Shi, Zujin;Yu, Bin;Guo, Xuefeng;Qin, Guogang;
10:2:51 Highly sensitive metal-insulator-semiconductor UV photodetectors based on ZnO/SiO2 core-shell nanowires
DOI:10.1039/c2jm30514c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:27 AU: Afsal, Manekkathodi;Wang, Chiu-Yen;Chu, Li-Wei;Ouyang, Hao;Chen, Lih-Juann;
10:2:52 Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons
DOI:10.1039/c2jm16632a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:31 AU: Wu, Di;Jiang, Yang;Zhang, Yugang;Li, Junwei;Yu, Yongqiang;Zhang, Yuping;Zhu, Zhifeng;Wang, Li;Wu, Chunyan;Luo, Linbao;Jie, Jiansheng;
10:2:53 Self-powered spectrum-selective photodetectors fabricated from n-ZnO/p-NiO core-shell nanowire arrays
DOI:10.1039/c3tc30525b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:29 AU: Ni, Pei-Nan;Shan, Chong-Xin;Wang, Shuang-Peng;Liu, Xing-Yu;Shen, De-Zhen;
10:2:54 High-Performance Hybrid Phenyl-C61-Butyric Acid Methyl Ester/Cd3P2 Nanowire Ultraviolet-Visible-Near Infrared Photodetectors
DOI:10.1021/nn405442z JN:ACS NANO PY:2014
TC:20 AU: Chen, Gui;Liang, Bo;Liu, Xi;Liu, Zhe;Yu, Gang;Xie, Xuming;Luo, Tao;Chen, Di;Zhu, Mingqiang;Shen, Guozhen;Fan, Zhiyong;
10:2:55 Stacking-Order-Dependent Optoelectronic Properties of Bilayer Nanofilm Photodetectors Made From Hollow ZnS and ZnO Microspheres
DOI:10.1002/adma.201202749 JN:ADVANCED MATERIALS PY:2012
TC:41 AU: Hu, Linfeng;Chen, Min;Shan, Wenze;Zhan, Tianrong;Liao, Meiyong;Fang, Xiaosheng;Hu, Xinhua;Wu, Limin;
10:2:56 ZnO single nanowire-based UV detectors
DOI:10.1063/1.3464287 JN:APPLIED PHYSICS LETTERS PY:2010
TC:49 AU: Das, Sachindra Nath;Moon, Kyeong-Ju;Kar, Jyoti Prakash;Choi, Ji-Hyuk;Xiong, Junjie;Lee, Tae Il;Myoung, Jae-Min;
10:2:57 Photoluminescence and Photoconductivity of ZnS-Coated ZnO Nanowires
DOI:10.1021/am900686c JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:60 AU: Bera, Ashok;Basak, Durga;
10:2:58 Gas sensors, thermistor and photodetector based on ZnS nanowires
DOI:10.1039/c2jm16523f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:31 AU: Wang, Xianfu;Xie, Zhong;Huang, Hongtao;Liu, Zhe;Chen, Di;Shen, Guozhen;
10:2:59 Self-powered, visible-light photodetector based on thermally reduced graphene oxide-ZnO (rGO-ZnO) hybrid nanostructure
DOI:10.1039/c1jm13920g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:49 AU: Zhan, Zhaoyao;Zheng, Lianxi;Pan, Yongzheng;Sun, Gengzhi;Li, Lin;
10:2:60 Ultrahigh sensitivity and gain white light photodetector based on GaTe/Sn:CdS nanoflake/nanowire heterostructures
DOI:10.1088/0957-4484/25/44/445202 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Zhou, Weichang;Zhou, Yong;Peng, Yuehua;Zhang, Yong;Yin, Yanling;Tang, Dongsheng;
10:2:61 General Fabrication of Monolayer SnO2 Nanonets for High-Performance Ultraviolet Photodetectors
DOI:10.1002/adfm.201102506 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:37 AU: Chen, Hao;Hu, Linfeng;Fang, Xiaosheng;Wu, Limin;
10:2:62 Cathodoluminescence Modulation of ZnS Nanostructures by Morphology, Doping, and Temperature
DOI:10.1002/adfm.201203711 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:30 AU: Liu, Hui;Hu, Linfeng;Watanabe, Kentaro;Hu, Xinhua;Dierre, Benjamin;Kim, Bongsoo;Sekiguchi, Takashi;Fang, Xiaosheng;
10:2:63 Recent Advances in Applications and Performance of Inorganic Hollow Spheres in Devices
DOI:10.1002/adma.201301911 JN:ADVANCED MATERIALS PY:2013
TC:25 AU: Chen, Min;Ye, Chenyu;Zhou, Shuxue;Wu, Limin;
10:2:64 Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector
DOI:10.1021/am4026505 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:31 AU: Zeng, Long-Hui;Wang, Ming-Zheng;Hu, Han;Nie, Biao;Yu, Yong-Qiang;Wu, Chun-Yan;Wang, Li;Hu, Ji-Gang;Xie, Chao;Liang, Feng-Xia;Luo, Lin-Bao;
10:2:65 Fast-speed and high-gain photodetectors of individual single crystalline Zn3P2 nanowires
DOI:10.1039/c0jm02778b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:36 AU: Wu, Peicai;Dai, Yu;Ye, Yu;Yin, Yang;Dai, Lun;
10:2:66 Antimony doped cadmium selenium nanobelts with enhanced electrical and optoelectrical properties
DOI:10.1016/j.apsusc.2014.04.085 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Zhang, Lijie;Yu, Hongfei;Cao, Wei;Dong, Youqing;Zou, Chao;Yang, Yun;Huang, Shaoming;Dai, Ning;Zhu, Da-Ming;
10:2:67 The epitaxial growth of ZnS nanowire arrays and their applications in UV-light detection
DOI:10.1039/c1jm13903g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:14 AU: Liang, Yao;Liang, Hui;Xiao, Xudong;Hark, Suikong;
10:2:68 Aligned networks of cadmium sulfide nanowires for highly flexible photodetectors with improved photoconductive responses
DOI:10.1039/c2jm14359c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:26 AU: Heo, Kwang;Lee, Hyungwoo;Park, Yongju;Park, Jinho;Lim, Hyun-Jin;Yoon, Duhee;Lee, Changhee;Kim, Miyoung;Cheong, Hyeonsik;Park, Jonghyurk;Jian, Jikang;Hong, Seunghun;
10:2:69 Heteroepitaxial Growth of GaP/ZnS Nanocable with Superior Optoelectronic Response
DOI:10.1021/nl3046552 JN:NANO LETTERS PY:2013
TC:27 AU: Hu, Linfeng;Brewster, Megan M.;Xu, Xiaojie;Tang, Chengchun;Gradecak, Silvija;Fang, Xiaosheng;
10:2:70 Low-Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO-SnO2 Heterojunction Nanofibers
DOI:10.1002/adma.201301828 JN:ADVANCED MATERIALS PY:2013
TC:41 AU: Tian, Wei;Zhai, Tianyou;Zhang, Chao;Li, Song-Lin;Wang, Xi;Liu, Fei;Liu, Dequan;Cai, Xingke;Tsukagoshi, Kazuhito;Golberg, Dmitri;Bando, Yoshio;
10:2:71 Flexible Three-Dimensional SnO2 Nanowire Arrays: Atomic Layer Deposition-Assisted Synthesis, Excellent Photodetectors, and Field Emitters
DOI:10.1021/am401762y JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:7 AU: Deng, Kaimo;Lu, Hao;Shi, Zhiwei;Liu, Qiong;Li, Liang;
10:2:72 Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping
DOI:10.1039/c0jm01013h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:26 AU: Zhai, Tianyou;Ma, Ying;Li, Liang;Fang, Xiaosheng;Liao, Meiyong;Koide, Yasuo;Yao, Jiannian;Bando, Yoshio;Golberg, Dmitri;
10:2:73 Nanocrystalline TiO2 film based photoelectrochemical cell as self-powered UV-photodetector
DOI:10.1016/j.nanoen.2012.05.003 JN:NANO ENERGY PY:2012
TC:30 AU: Li, Xiaodong;Gao, Caitian;Duan, Huigao;Lu, Bingan;Pan, Xiaojun;Xie, Erqing;
10:2:74 MoO3 Nanodots Decorated CdS Nanoribbons for High-Performance, Homojunction Photovoltaic Devices on Flexible Substrates
DOI:10.1021/acs.nanolett.5b01087 JN:NANO LETTERS PY:2015
TC:0 AU: Shao, Zhibin;Jie, Jiansheng;Sun, Zheng;Xia, Feifei;Wang, Yuming;Zhang, Xiaohong;Ding, Ke;Lee, Shuit-Tong;
10:2:75 High-Performance Photoelectrochemical-Type Self-Powered UV Photodetector Using Epitaxial TiO2/SnO2 Branched Heterojunction Nanostructure
DOI:10.1002/smll.201202408 JN:SMALL PY:2013
TC:27 AU: Li, Xiaodong;Gao, Caitian;Duan, Huigao;Lu, Bingan;Wang, Youqing;Chen, Lulu;Zhang, Zhenxing;Pan, Xiaojun;Xie, Erqing;
10:2:76 Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors
DOI:10.1002/adfm.201304176 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:5 AU: Huang, Rong;Zhang, Jie;Wei, Fenfen;Shi, Lin;Kong, Tao;Cheng, Guosheng;
10:2:77 Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction
DOI:10.1002/adfm.201303368 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:16 AU: Luo, Lin-Bao;Chen, Jing-Jing;Wang, Ming-Zheng;Hu, Han;Wu, Chun-Yan;Li, Qiang;Wang, Li;Huang, Jian-An;Liang, Feng-Xia;
10:2:78 Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement
DOI:10.1002/adma.201102585 JN:ADVANCED MATERIALS PY:2012
TC:35 AU: Li, Dabing;Sun, Xiaojuan;Song, Hang;Li, Zhiming;Chen, Yiren;Jiang, Hong;Miao, Guoqing;
10:2:79 Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms
DOI:10.1002/adma.201305457 JN:ADVANCED MATERIALS PY:2014
TC:24 AU: Tian, Wei;Zhang, Chao;Zhai, Tianyou;Li, Song-Lin;Wang, Xi;Liu, Jiangwei;Jie, Xiao;Liu, Dequan;Liao, Meiyong;Koide, Yasuo;Golberg, Dmitri;Bando, Yoshio;
10:2:80 Self-Powered Ultrafast Broadband Photodetector Based on p-n Heterojunctions of CuO/Si Nanowire Array
DOI:10.1021/am5054338 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Hong, Qingshui;Cao, Yang;Xu, Jia;Lu, Huimin;He, Junhui;Sun, Jia-Lin;
10:2:81 Synthesis of ZnxCd1-xSe (0 <= x <= 1) alloyed nanowires for variable-wavelength photodetectors
DOI:10.1039/b917531h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:30 AU: Yoon, Yeo-June;Park, Kyung-Soo;Heo, Jeong-Hoon;Park, Jae-Gwan;Nahm, Sahn;Choi, Kyoung Jin;
10:2:82 Eco-friendly visible-wavelength photodetectors based on bandgap engineerable nanomaterials
DOI:10.1039/c1jm12173a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:14 AU: Wang, Jian-Jun;Hu, Jin-Song;Guo, Yu-Guo;Wan, Li-Jun;
10:2:83 High-performance photodetectors and enhanced field-emission of CdS nanowire arrays on CdSe single-crystalline sheets
DOI:10.1039/c4tc01503g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Li, Guohua;Jiang, Yang;Zhang, Yugang;Lan, Xinzheng;Zhai, Tianyou;Yi, Gyu-Chul;
10:2:84 Band-Selective Infrared Photodetectors with Complete-Composition-Range InAsxP1-x Alloy Nanowires
DOI:10.1002/adma.201402945 JN:ADVANCED MATERIALS PY:2014
TC:1 AU: Ren, Pinyun;Hu, Wei;Zhang, Qinglin;Zhu, Xiaoli;Zhuang, Xiujuan;Ma, Liang;Fan, Xiaopeng;Zhou, Hong;Liao, Lei;Duan, Xiangfeng;Pan, Anlian;
10:2:85 High-performance ZnO/Ag Nanowire/ZnO composite film UV photodetectors with large area and low operating voltage
DOI:10.1039/c4tc00394b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:6 AU: Yang, Zhi;Wang, Minqiang;Song, Xiaohui;Yan, Guodong;Ding, Yucheng;Bai, Jinbo;
10:2:86 Brush-like SnO2/ZnO hierarchical nanostructure: Synthesis, characterization and application in UV photoresponse
DOI:10.1063/1.4811174 JN:AIP ADVANCES PY:2013
TC:4 AU: Dai, Jun;Xu, Chunxiang;Guo, Jiyuan;Xu, Xiaoyong;Zhu, Gangyi;Lin, Yi;
10:2:87 High-Performance Single CdS Nanobelt Metal-Semiconductor Field-Effect Transistor-Based Photodetectors
DOI:10.1021/am100661x JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:26 AU: Ye, Yu;Dai, Lun;Wen, Xiaonan;Wu, Peicai;Pen, Ruomin;Qin, Guogang;
10:2:88 Network-Enhanced Photoresponse Time of Ge Nanowire Photodetectors
DOI:10.1021/am100321r JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:26 AU: Yan, Chaoyi;Singh, Nandan;Cai, Hui;Gan, Chee Lip;Lee, Pooi See;
10:2:89 Efficient multispectral photodetection using Mn doped ZnO nanowires
DOI:10.1039/c2jm16698d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:28 AU: Prabhakar, Rajiv Ramanujam;Mathews, Nripan;Jinesh, K. B.;Karthik, K. R. G.;Pramana, Stevin Snellius;Varghese, Binni;Sow, Chorng Haur;Mhaisalkar, Subodh;
10:2:90 Chlorine-doped n-type CdS nanowires with enhanced photoconductivity
DOI:10.1088/0957-4484/21/50/505203 JN:NANOTECHNOLOGY PY:2010
TC:26 AU: Wu, Chunyan;Jie, Jiansheng;Wang, Li;Yu, Yongqiang;Peng, Qiang;Zhang, Xiwei;Cai, Jiajun;Guo, Huier;Wu, Di;Jiang, Yang;
10:2:91 Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications
DOI:10.1088/0957-4484/22/40/405201 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Wu, Di;Jiang, Yang;Li, Shanying;Li, Fangze;Li, Junwei;Lan, Xinzheng;Zhang, Yugang;Wu, Chunyan;Luo, Linbao;Jie, Jiansheng;
10:2:92 High-Performance Flexible Broadband Photodetector Based on Organolead Halide Perovskite
DOI:10.1002/adfm.201402020 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:17 AU: Hu, Xin;Zhang, Xiaodong;Liang, Lin;Bao, Jian;Li, Shuang;Yang, Wenlong;Xie, Yi;
10:2:93 Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire
DOI:10.1063/1.3491212 JN:APPLIED PHYSICS LETTERS PY:2010
TC:31 AU: Li, Chun;Bando, Yoshio;Liao, Meiyong;Koide, Yasuo;Golberg, Dmitri;
10:2:94 Self-powered solid-state photodetector based on TiO2 nanorod/spiro-MeOTAD heterojunction
DOI:10.1063/1.4858390 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Xie, Yanru;Wei, Lin;Li, Qinghao;Wei, Guodong;Wang, Dong;Chen, Yanxue;Jiao, Jun;Yan, Shishen;Liu, Guolei;Mei, Liangmo;
10:2:95 Interfacial transport homogenization for nanowire ensemble photodiodes by using a tunneling insertion
DOI:10.1063/1.4795317 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Sheng, Yun;Gao, Fan;Wang, Jianyu;Sun, Huabin;Wang, Junzhuan;Yan, Shancheng;Zhang, Rong;Zheng, Youdou;Shi, Yi;
10:2:96 Single ZnO Microrod Ultraviolet Photodetector with High Photocurrent Gain
DOI:10.1021/am403609y JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Dai, Jun;Xu, Chunxiang;Xu, Xiaoyong;Guo, Jiyuan;Li, Jitao;Zhu, Gangyi;Lin, Yi;
10:2:97 High performance, self-powered UV-photodetector based on ultrathin, transparent, SnO2-TiO2 core-shell electrodes
DOI:10.1016/j.jallcom.2014.07.171 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Gao, Caitian;Li, Xiaodong;Zhu, Xupeng;Chen, Lulu;Wang, Youqing;Teng, Feng;Zhang, Zhenxing;Duan, Huigao;Xie, Erqing;
10:2:98 Effects of surface self- assembled NH4+ on the performance of TiO2- based ultraviolet photodetectors
DOI:10.1016/j.jallcom.2014.02.150 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Liu, Guohua;Tao, Chen;Zhang, Min;Gu, Xuehui;Meng, Fanxu;Zhang, Xindong;Chen, Yu;Ruan, Shengping;
10:2:99 Optoelectronic characteristics of UV photodetectors based on sol-gel synthesized GZO semiconductor thin films
DOI:10.1016/j.jallcom.2014.01.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Tsay, Chien-Yie;Yu, Shih-Hsun;
10:2:100 Oil-water interfacial self-assembly of PS/ZnS nanospheres and photoconducting property of corresponding nanofilm
DOI:10.1039/c2jm32164e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Shan, Wenze;Hu, Linfeng;Lin, Xin;Chen, Min;Wu, Limin;
10:2:101 A sandwich-structured ultraviolet photodetector driven only by opposite heterojunctions
DOI:10.1039/c2jm32287k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:22 AU: Yang, Shengxue;Gong, Jian;Deng, Yulin;
10:2:102 Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning
DOI:10.1039/c3tc31214c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Yoon, Hana;Kim, Si-in;Lee, Sunghun;In, Juneho;Kim, Jihwan;Ryoo, Hyunseong;Noh, Jae-Hong;Ahn, Jae-Pyoung;Jo, Younghun;Choo, Jaebum;Kim, Bongsoo;
10:2:103 Individual Ohmic contacted ZnO/Zn2SnO4 radial heterostructured nanowires as photodetectors with a broad-spectral-response: injection of electrons into/from interface states
DOI:10.1039/c3tc32059f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:4 AU: Cheng, Baochang;Xu, Jian;Ouyang, Zhiyong;Su, Xiaohui;Xiao, Yanhe;Lei, Shuijin;
10:2:104 Facile microwave-assisted synthesis of uniform Sb2Se3 nanowires for high performance photodetectors
DOI:10.1039/c3tc31883d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:9 AU: Liu, Yong-Qiang;Zhang, Meng;Wang, Feng-Xia;Pan, Ge-Bo;
10:2:105 Contact printing of compositionally graded CdSxSe1-x nanowire parallel arrays for tunable photodetectors
DOI:10.1088/0957-4484/23/4/045201 JN:NANOTECHNOLOGY PY:2012
TC:21 AU: Takahashi, Toshitake;Nichols, Patricia;Takei, Kuniharu;Ford, Alexandra C.;Jamshidi, Arash;Wu, Ming C.;Ning, C. Z.;Javey, Ali;
10:2:106 Development of a Seedless Floating Growth Process in Solution for Synthesis of Crystalline ZnO Micro/Nanowire Arrays on Graphene: Towards High-Performance Nanohybrid Ultraviolet Photodetectors
DOI:10.1002/adfm.201300468 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:18 AU: Liu, Jianwei;Lu, Rongtao;Xu, Guowei;Wu, Judy;Thapa, Prem;Moore, David;
10:2:107 ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector
DOI:10.1063/1.3299269 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: Leung, Y. H.;He, Z. B.;Luo, L. B.;Tsang, C. H. A.;Wong, N. B.;Zhang, W. J.;Lee, S. T.;
10:2:108 High performance single In2Se3 nanowire photodetector
DOI:10.1063/1.3669513 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Li, Q. L.;Li, Y.;Gao, J.;Wang, S. D.;Sun, X. H.;
10:2:109 Nanocrystallized CdS beneath the Surface of a Photoconductor for Detection of UV Light with Picowatt Sensitivity
DOI:10.1021/am5052813 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Lin, Keng-Te;Chen, Hsuen-Li;Lai, Yu-Sheng;Liu, Yu-Lun;Tseng, Yi-Chuan;Lin, Cheng-Hsi;
10:2:110 Opposite photocurrent response to ultraviolet and visible light
DOI:10.1039/c2jm34545e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:10 AU: Yang, Shengxue;Gong, Jian;Deng, Yulin;
10:2:111 Tuning the p-type conductivity of ZnSe nanowires via silver doping for rectifying and photovoltaic device applications
DOI:10.1039/c2ta00471b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:11 AU: Wang, Li;Lu, Min;Wang, Xiangan;Yu, Yongqiang;Zhao, Xingzhi;Lv, Peng;Song, Hongwei;Zhang, Xiwei;Luo, Linbao;Wu, Chunyan;Zhang, Yan;Jie, Jiansheng;
10:2:112 Flexible photodetectors with single-crystalline GaTe nanowires
DOI:10.1039/c4tc00917g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:4 AU: Yu, Gang;Liu, Zhe;Xie, Xuming;Ouyang, Xia;Shen, Guozhen;
10:2:113 Facile Synthesis, Self-Assembly, and Photoelectrical Performance of SrTiO3 Hollow Spheres with Open Holes
DOI:10.1021/la4022454 JN:LANGMUIR PY:2013
TC:1 AU: Ye, Chenyu;Xu, Jiaxi;Zhou, Shuxue;Chen, Min;Wu, Limin;
10:2:114 Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts
DOI:10.1016/j.matlet.2012.10.112 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Su, Qing;Li, Lijuan;Li, Shanying;Zhao, Haipeng;
10:2:115 High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Oriented beta-Ga2O3 Nanobelts
DOI:10.1002/smll.201302705 JN:SMALL PY:2014
TC:10 AU: Zou, Rujia;Zhang, Zhenyu;Liu, Qian;Hu, Junqing;Sang, Liwen;Liao, Meiyong;Zhang, Wenjun;
10:2:116 Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices
DOI:10.1002/aenm.201200868 JN:ADVANCED ENERGY MATERIALS PY:2013
TC:9 AU: Li, Fang-Ze;Luo, Lin-Bao;Yang, Qing-Dan;Wu, Di;Xie, Chao;Nie, Biao;Jie, Jian-Sheng;Wu, Chun-Yan;Wang, Li;Yu, Shu-Hong;
10:2:117 Broad spectral response photodetector based on individual tin-doped CdS nanowire
DOI:10.1063/1.4897521 JN:AIP ADVANCES PY:2014
TC:2 AU: Zhou, Weichang;Peng, Yuehua;Yin, Yanling;Zhou, Yong;Zhang, Yong;Tang, Dongsheng;
10:2:118 Bias-tunable dual-mode ultraviolet photodetectors for photoelectric tachometer
DOI:10.1063/1.4863431 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Li, Xin;Qi, Junjie;Zhang, Qi;Zhang, Yue;
10:2:119 Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction
DOI:10.1021/am100277q JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:47 AU: Liu, Nishuang;Fang, Guojia;Zeng, Wei;Zhou, Hai;Cheng, Fei;Zheng, Qiao;Yuan, Longyan;Zou, Xiao;Zhao, Xingzhong;
10:2:120 High-Performance UV Photodetection of Unique ZnO Nanowires from Zinc Carbonate Hydroxide Nanobelts
DOI:10.1021/am401533w JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:8 AU: Ren, Lu;Tian, Tingting;Li, Yuanzhi;Huang, Jianguo;Zhao, Xiujian;
10:2:121 Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact
DOI:10.1063/1.4854455 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:14 AU: Zhang, H.;Babichev, A. V.;Jacopin, G.;Lavenus, P.;Julien, F. H.;Egorov, A. Yu;Zhang, J.;Pauporte, T.;Tchernycheva, M.;
10:2:122 Opto-electrical properties and chemisorption reactivity of Ga-doped ZnO nanopagodas
DOI:10.1039/c3ta01209c JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:6 AU: Chiu, Hsien-Ming;Wu, Jenn-Ming;
10:2:123 Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes
DOI:10.1039/c4tc01839g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:4 AU: Chen, Hong-Yu;Liu, Ke-Wei;Chen, Xing;Zhang, Zhen-Zhong;Fan, Ming-Ming;Jiang, Ming-Ming;Xie, Xiu-Hua;Zhao, Hai-Feng;Shen, De-Zhen;
10:2:124 ZnO Nanodisk Based UV Detectors with Printed Electrodes
DOI:10.1021/la500143w JN:LANGMUIR PY:2014
TC:6 AU: Alenezi, Mohammad R.;Alshammari, Abdullah S.;Alzanki, Talal H.;Jarowski, Peter;Henley, Simon John;Silva, S. Ravi P.;
10:2:125 Fast-grown CdS quantum dots: Single-source precursor approach vs microwave route
DOI:10.1016/j.matchemphys.2013.06.034 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Fregnaux, Mathieu;Dalmasso, Stephane;Durand, Pierrick;Zhang, Yudong;Gaumet, Jean-Jacques;Laurenti, Jean-Pierre;
10:2:126 Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics
DOI:10.1088/0957-4484/22/48/485701 JN:NANOTECHNOLOGY PY:2011
TC:25 AU: Luo, Lin-bao;Liang, Feng-xia;Jie, Jian-sheng;
10:2:127 Fabrication of lateral electrodes on semiconductor nanowires through structurally matched insulation for functional optoelectronics
DOI:10.1088/0957-4484/24/2/025204 JN:NANOTECHNOLOGY PY:2013
TC:2 AU: Sheng, Yun;Sun, Huabin;Wang, Jianyu;Gao, Fan;Wang, Junzhuan;Pan, Lijia;Pu, Lin;Zheng, Youdou;Shi, Yi;
10:2:128 Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire
DOI:10.1021/acs.nanolett.5b00906 JN:NANO LETTERS PY:2015
TC:0 AU: Zhao, Bin;Wang, Fei;Chen, Hongyu;Wang, Yunpeng;Jiang, Mingming;Fang, Xiaosheng;Zhao, Dongxu;
10:2:129 Ultrahigh-gain single SnO2 nanowire photodetectors made with ferromagnetic nickel electrodes
DOI:10.1038/am.2012.48 JN:NPG ASIA MATERIALS PY:2012
TC:10 AU: Lu, Meng-Lin;Weng, Tong-Min;Chen, Ju-Ying;Chen, Yang-Fang;
10:2:130 Environmentally stable/self-powered ultraviolet photodetectors with high sensitivity
DOI:10.1063/1.4824204 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Yang, Shengxue;Tongay, Sefaattin;Li, Shu-Shen;Xia, Jian-Bai;Wu, Junqiao;Li, Jingbo;
10:2:131 Synthesis and photoluminescence properties of comb-like CdS nanobelt/ZnO nanorod heterostructures
DOI:10.1016/j.apsusc.2012.08.019 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Lan, Changyong;Gong, Jiangfeng;Liu, Chunming;
10:2:132 Thermal phase transformation of In2Se3 nanowires studied by in situ synchrotron radiation X-ray diffraction
DOI:10.1039/c1jm10419e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:18 AU: Li, Yang;Gao, Jing;Li, Qinliang;Peng, Mingfa;Sun, Xuhui;Li, Youyong;Yuan, Gang;Wen, Wen;Meyyappan, M.;
10:2:133 Aluminium-doped n-type ZnS nanowires as high-performance UV and humidity sensors
DOI:10.1039/c2jm15365c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:19 AU: Jiang, Peng;Jie, Jiansheng;Yu, Yongqiang;Wang, Zhi;Xie, Chao;Zhang, Xiwei;Wu, Chunyan;Wang, Li;Zhu, Zhifeng;Luo, Linbao;
10:2:134 Ultralow-voltage and high gain photoconductor based on ZnS:Ga nanoribbons for the detection of low-intensity ultraviolet light
DOI:10.1039/c3tc32310b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Yu, Yongqiang;Jiang, Yang;Zheng, Kun;Zhu, Zhifeng;Lan, XinZheng;Zhang, Yan;Zhang, Yugang;Xuan, Xiaofeng;
10:2:135 High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts
DOI:10.1088/0957-4484/24/49/495701 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Zou, Rujia;Zhang, Zhenyu;Hu, Junqing;Sang, Liwen;Koide, Yauso;Liao, Meiyong;
10:2:136 ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications
DOI:10.1088/0957-4484/24/39/395201 JN:NANOTECHNOLOGY PY:2013
TC:2 AU: Zhang, Xiwei;Zhang, Xiujuan;Wang, Liu;Wu, Yiming;Wang, Yan;Gao, Peng;Han, Yuanyuan;Jie, Jiansheng;
10:2:137 Flexible Visible-Light Photodetectors with Broad Photoresponse Based on ZrS3 Nanobelt Films
DOI:10.1002/smll.201401376 JN:SMALL PY:2014
TC:6 AU: Tao, You-Rong;Wu, Xing-Cai;Xiong, Wei-Wei;
10:2:138 Semiconductor Alloy Nanoribbon Lateral Heterostructures for High-Performance Photodetectors
DOI:10.1002/adma.201304967 JN:ADVANCED MATERIALS PY:2014
TC:4 AU: Guo, Pengfei;Hu, Wei;Zhang, Qinglin;Zhuang, Xiujuan;Zhu, Xiaoli;Zhou, Hong;Shan, Zhengping;Xu, Jinyou;Pan, Anlian;
10:2:139 Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector
DOI:10.1007/s00339-012-6886-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:13 AU: Zhang, Xianghui;Han, Xiangyun;Su, Jun;Zhang, Qi;Gao, Yihua;
10:2:140 All solution processed, nanowire enhanced ultraviolet photodetectors
DOI:10.1063/1.4789757 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Afal, Aysegul;Coskun, Sahin;Unalan, Husnu Emrah;
10:2:141 Enhancement of Gas Sensing Properties of CdS Nanowire/ZnO Nanosphere Composite Materials at Room Temperature by Visible-Light Activation
DOI:10.1021/am200008y JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:35 AU: Zhai, Jiali;Wang, Lingling;Wang, Dejun;Li, Haiyan;Zhang, Yu;He, Dong Qing;Xie, Tengfeng;
10:2:142 Zinc Oxide Nanowire Photodetectors with Single-Walled Carbon Nanotube Thin-Film Electrodes
DOI:10.1021/am301402y JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:16 AU: Ates, Elif Selen;Kucukyildiz, Seyda;Unalan, Husnu Emrah;
10:2:143 Ultrafast UV Switch Based on ZnO-Ag Heterostructures
DOI:10.1007/s13391-013-3157-4 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: An, Xiuyun;Teng, Feng;Zhang, Zhenxing;Pan, Xiaojun;Zhou, Jinyuan;Xie, Erqing;
10:2:144 High-performance metal-semiconductor-metal UV photodetector based on spray deposited ZnO thin films
DOI:10.1016/j.jallcom.2014.01.147 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:18 AU: Inamdar, S. I.;Rajpure, K. Y.;
10:2:145 High-efficiency color tunable n-CdSxSe1-x/p(+)-Si parallel-nanobelts heterojunction light-emitting diodes
DOI:10.1039/c0jm00667j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:17 AU: Liu, Cui;Dai, Lun;Ye, Yu;Sun, Tuo;Peng, Ruomin G.;Wen, Xiaonan;Wu, Peicai;Qin, Guogang;
10:2:146 Hole-induced large-area homoepitaxial growth of CdSe nanowire arrays for photovoltaic application
DOI:10.1039/c3ta10771j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:2 AU: Bian, Liang;Zhang, Xiwei;Luan, Chunyan;Zapien, Juan Antonio;Zhang, Xiaozhen;Wu, Yiming;Jie, Jiansheng;
10:2:147 ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications
DOI:10.1039/c4ta05239k JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:4 AU: Abou Chaaya, Adib;Bechelany, Mikhael;Balme, Sebastien;Miele, Philippe;
10:2:148 Individual HfS3 nanobelt for field-effect transistor and high performance visible-light detector
DOI:10.1039/c4tc01039f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Xiong, Wei-Wei;Chen, Jin-Qiang;Wu, Xing-Cai;Zhu, Jun-Jie;
10:2:149 BiOBrxI(Cl)(1-x) based spectral tunable photodetectors fabricated by a facile interfacial self-assembly strategy
DOI:10.1039/c3tc32400a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Xu, Zhikun;Han, Lei;Lou, Baohua;Zhang, Xiaowei;Dong, Shaojun;
10:2:150 Synthesis, characterization and optical properties of ZnS nanobelt/ZnO nanoparticle heterostructures
DOI:10.1016/j.matlet.2012.05.054 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Wang, Zhi-Qiang;Ge, Rui-Ping;Gong, Jiang-Feng;Gu, Shu-Lin;Yang, Shao-Guang;
10:2:151 Synthesis and photovoltaic characteristic of n-type CdSe nanobelts
DOI:10.1016/j.matlet.2012.01.015 JN:MATERIALS LETTERS PY:2012
TC:12 AU: Du, Lingzhi;Lei, Youan;
10:2:152 Hybrid Si Nanowire/Amorphous Silicon FETs for Large-Area Image Sensor Arrays
DOI:10.1021/nl200114h JN:NANO LETTERS PY:2011
TC:21 AU: Wong, William S.;Raychaudhuri, Sourobh;Lujan, Rene;Sambandan, Sanjiv;Street, Robert A.;
10:2:153 Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors
DOI:10.1002/smll.201400373 JN:SMALL PY:2014
TC:2 AU: Kang, Daegun;Rim, Taiuk;Baek, Chang-Ki;Meyyappan, M.;Lee, Jeong-Soo;
10:2:154 Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
DOI:10.1002/adma.201403664 JN:ADVANCED MATERIALS PY:2014
TC:9 AU: Guo, Nan;Hu, Weida;Liao, Lei;Yip, SenPo;Ho, Johnny C.;Miao, Jinshui;Zhang, Zhi;Zou, Jin;Jiang, Tao;Wu, Shiwei;Chen, Xiaoshuang;Lu, Wei;
10:2:155 High responsivity ultraviolet photodetector realized via a carrier-trapping process
DOI:10.1063/1.3527974 JN:APPLIED PHYSICS LETTERS PY:2010
TC:31 AU: Liu, J. S.;Shan, C. X.;Li, B. H.;Zhang, Z. Z.;Yang, C. L.;Shen, D. Z.;Fan, X. W.;
10:2:156 An efficient fast response and high-gain solar-blind flexible ultraviolet photodetector employing hybrid geometry
DOI:10.1063/1.4876450 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Hussain, Amreen A.;Pal, Arup R.;Patil, Dinkar S.;
10:2:157 In Situ Integration of Squaraine-Nanowire-Array-Based Schottky-Type Photodetectors with Enhanced Switching Performance
DOI:10.1021/am402087v JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:7 AU: Zhang, Yuping;Deng, Wei;Zhang, Xiujuan;Zhang, Xiwei;Zhang, Xiaohong;Xing, Yuliang;Jie, Jiansheng;
10:2:158 Morphology controllable synthesis of silver nanoparticles: Optical properties study and SERS application
DOI:10.1016/j.jallcom.2013.05.044 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Wu, Wenjian;Wu, Mingzai;Sun, Zhaoqi;Li, Guang;Ma, Yongqing;Liu, Xiansong;Wang, Xiaofang;Chen, Xiaoshuang;
10:2:159 Surface induced negative photoconductivity in p-type ZnSe:Bi nanowires and their nano-optoelectronic applications
DOI:10.1039/c1jm00035g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:22 AU: Zhang, Xiwei;Jie, Jiansheng;Wang, Zhi;Wu, Chunyan;Wang, Li;Peng, Qiang;Yu, Yongqiang;Jiang, Peng;Xie, Chao;
10:2:160 Graphene-nanowire hybrid structures for high-performance photoconductive devices
DOI:10.1039/c2jm16565a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:13 AU: Lee, Hyungwoo;Heo, Kwang;Park, Jaesung;Park, Yongju;Noh, Seunguk;Kim, Kwang S.;Lee, Changhee;Hong, Byung Hee;Jian, Jikang;Hong, Seunghun;
10:2:161 Large conductance switching nonvolatile memories based on p-ZnS nanoribbon/n-Si heterojunction
DOI:10.1039/c2tc00267a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:5 AU: Yu, Yongqiang;Jiang, Yang;Jiang, Peng;Zhang, Yugang;Wu, Di;Zhu, Zhifeng;Liang, Qi;Chen, Shirong;Zhang, Yan;Jie, Jiansheng;
10:2:162 Flexible high-performance ultraviolet photoconductor with zinc oxide nanorods and 8-hydroxyquinoline
DOI:10.1039/c3tc32426e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Jin, Zhiwen;Wang, Jizheng;
10:2:163 Synthesis of high-quality Cl-doped CdSe nanobelts and their application in nanodevices
DOI:10.1016/j.matlet.2013.04.107 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Du, Lingzhi;Lei, Youan;
10:2:164 Contact printing of horizontally-aligned p-type Zn3P2 nanowire arrays for rigid and flexible photodetectors
DOI:10.1088/0957-4484/24/9/095703 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Yu, Gang;Liang, Bo;Huang, Hongtao;Chen, Gui;Liu, Zhe;Chen, Di;Shen, Guozhen;
10:2:165 High-performance self-powered UV photodetectors based on TiO2 nano-branched arrays
DOI:10.1088/0957-4484/25/7/075202 JN:NANOTECHNOLOGY PY:2014
TC:7 AU: Xie, Yanru;Wei, Lin;Li, Qinghao;Chen, Yanxue;Yan, Shishen;Jiao, Jun;Liu, Guolei;Mei, Liangmo;
10:2:166 Atom-Resolved Evidence of Anisotropic Growth in ZnS Nanotetrapods
DOI:10.1021/nl2015747 JN:NANO LETTERS PY:2011
TC:25 AU: Liu, Wei;Wang, Ning;Wang, Rongming;Kumar, Shishir;Duesberg, Georg S.;Zhang, Hongzhou;Sun, Kai;
10:2:167 Efficient Charge Extraction out of Nanoscale Schottky Contacts to CdS Nanowires
DOI:10.1021/nl204193y JN:NANO LETTERS PY:2012
TC:13 AU: Dufaux, Thomas;Burghard, Marko;Kern, Klaus;
10:2:168 Crystalline-Crystalline Phase Transformation in Two-Dimensional In2Se3 Thin Layers
DOI:10.1021/nl400888p JN:NANO LETTERS PY:2013
TC:13 AU: Tao, Xin;Gu, Yi;
10:2:169 UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition
DOI:10.1063/1.4795737 JN:AIP ADVANCES PY:2013
TC:8 AU: Baltakesmez, A.;Tekmen, S.;Koc, P.;Tuzemen, S.;Meral, K.;Onganer, Y.;
10:2:170 High-Performance Organic Nanoscale Photoswitches Based on Nanogap Electrodes Coated with a Blend of Poly(3-hexylthiophene) and [6,6]-Phenyl-C61-butyric Acid Methyl Ester (P3HT:PCBM)
DOI:10.1002/adma.200903671 JN:ADVANCED MATERIALS PY:2010
TC:30 AU: Zhu, Hongfei;Li, Tao;Zhang, Yajie;Dong, Huanli;Song, Jinsheng;Zhao, Huaping;Wei, Zhongming;Xu, Wei;Hu, Wenping;Bo, Zhishan;
10:2:171 High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry
DOI:10.1063/1.3360206 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Wu, Di;Jiang, Yang;Wang, Li;Li, Shanying;Wu, Bo;Lan, Xinzheng;Yu, Yongqiang;Wu, Chunyan;Wang, Zhuangbing;Jie, Jiansheng;
10:2:172 High-temperature ultraviolet detection based on InGaN Schottky photodiodes
DOI:10.1063/1.3615291 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Sang, Liwen;Liao, Meiyong;Koide, Yasuo;Sumiya, Masatomo;
10:2:173 Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in beta-Ga2O3 solar-blind ultraviolet photodetectors
DOI:10.1063/1.4890524 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Guo, D. Y.;Wu, Z. P.;An, Y. H.;Guo, X. C.;Chu, X. L.;Sun, C. L.;Li, L. H.;Li, P. G.;Tang, W. H.;
10:2:174 High-Performance Photoconductivity and Electrical Transport of ZnO/ZnS Core/Shell Nanowires for Multifunctional Nanodevice Applications
DOI:10.1021/am500731n JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Jeong, Sehee;Choe, Minhyeok;Kang, Jang-Won;Kim, Min Woo;Jung, Wan Gil;Leem, Young-Chul;Chun, Jaeyi;Kim, Bong-Joong;Park, Seong-Ju;
10:2:175 Optical properties of ZnSxSe1-x alloy nanostructures and their photodetectors
DOI:10.1016/j.jallcom.2014.04.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Chuo, H. X.;Wang, T. Y.;Zhang, W. G.;
10:2:176 Competitive role of Mn diffusion with growth in Mn catalyzed nanostructures
DOI:10.1063/1.3702881 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Rehman, S.;Hafeez, M.;Manzoor, U.;Khan, M. A.;Bhatti, A. S.;
10:2:177 Crystalline indium sesquitelluride nanostructures: synthesis, growth mechanism and properties
DOI:10.1039/c2jm33760f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:5 AU: Safdar, Muhammad;Wang, Zhenxing;Mirza, Misbah;Jiang, Chao;He, Jun;
10:2:178 Single CdSe nanobelts-on-electrodes Schottky junction solar cells
DOI:10.1039/c2ta00410k JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:3 AU: Li, Liang;Lu, Hao;Deng, Kaimo;
10:2:179 One-step fabrication of an ultralong zinc octaethylporphyrin nanowire network with high-performance photoresponse
DOI:10.1039/c2tc00422d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Wang, Feng-Xia;Liu, Yong-Qiang;Wu, Hao-Di;Xiao, Yan;Pan, Ge-Bo;
10:2:180 Novel graphene-oxide-semiconductor nanowire phototransistors
DOI:10.1039/c3tc32123a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Jin, Weifeng;Gao, Zhiwei;Zhou, Yu;Yu, Bin;Zhang, Hui;Peng, Hailin;Liu, Zhongfan;Dai, Lun;
10:2:181 Morphology controlled synthesis of wurtzite ZnS nanostructures through simple hydrothermal method and observation of white light emission from ZnO obtained by annealing the synthesized ZnS nanostructures
DOI:10.1039/c4tc00091a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:7 AU: Kole, Arup Kanti;Tiwary, Chandra Sekhar;Kumbhakar, Pathik;
10:2:182 Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers
DOI:10.1088/0957-4484/22/26/265506 JN:NANOTECHNOLOGY PY:2011
TC:13 AU: Kim, Dong Chan;Jung, Byung Oh;Lee, Ju Ho;Cho, Hyung Koun;Lee, Jeong Yong;Lee, Jun Hee;
10:2:183 Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires
DOI:10.1088/0957-4484/23/48/485203 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Wu, Di;Jiang, Yang;Yu, Yongqiang;Zhang, Yugang;Li, Guohua;Zhu, Zhifeng;Wu, Chunyan;Wang, Li;Luo, Linbao;Jie, Jiansheng;
10:2:184 Transparent, highly flexible, all nanowire network germanium photodetectors
DOI:10.1088/0957-4484/23/32/325202 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Aksoy, Burcu;Coskun, Sahin;Kucukyildiz, Seyda;Unalan, Husnu Emrah;
10:2:185 Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application
DOI:10.1088/0957-4484/24/9/095603 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Nie, Biao;Luo, Lin-Bao;Chen, Jing-Jing;Hu, Ji-Gang;Wu, Chun-Yan;Wang, Li;Yu, Yong-Qiang;Zhu, Zhi-Feng;Jie, Jian-Sheng;
10:2:186 Amphoteric Nature of Sn in CdS Nanowires
DOI:10.1021/nl4035169 JN:NANO LETTERS PY:2014
TC:7 AU: Zhang, Mengyao;Wille, Marcel;Roeder, Robert;Heedt, Sebastian;Huang, Liubing;Zhu, Zheng;Geburt, Sebastian;Gruetzmacher, Detlev;Schaepers, Thomas;Ronning, Carsten;Lu, Jia Grace;
10:2:187 From ZnS nanobelts to ZnO/ZnS heterostructures: Microscopy analysis and their tunable optical property
DOI:10.1063/1.3474609 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Liu, Wei;Wang, Rongming;Wang, Ning;
10:2:188 Hematoporphyrin-ZnO Nanohybrids: Twin Applications in Efficient Visible-Light Photocatalysis and Dye-Sensitized Solar Cells
DOI:10.1021/am302288m JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:20 AU: Sarkar, Soumik;Makhal, Abhinandan;Bora, Tanujjal;Lakhsman, Karthik;Singha, Achintya;Dutta, Joydeep;Pal, Samir Kumar;
10:2:189 Chemical Conversion Synthesis of ZnS Shell on ZnO Nanowire Arrays: Morphology Evolution and Its Effect on Dye-Sensitized Solar Cell
DOI:10.1021/am201425n JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:21 AU: Liu, Lizhu;Chen, Yiqing;Guo, Taibo;Zhu, Yunqing;Su, Yong;Jia, Chong;Wei, Meiqin;Cheng, Yinfen;
10:2:190 High-performance UV detector based on Ga-doped zinc oxide thin films
DOI:10.1016/j.apsusc.2011.06.073 JN:APPLIED SURFACE SCIENCE PY:2011
TC:18 AU: Shinde, S. S.;Rajpure, K. Y.;
10:2:191 Ultrahigh responsivity UV detector based on TiO2/Pt-doped TiO2 multilayer nanofilms
DOI:10.1016/j.jallcom.2014.07.147 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Liu, Guohua;Zhang, Min;Zhang, Dezhong;Zhou, Jingran;Meng, Fanxu;Ruan, Shengping;
10:2:192 Catalyst solubility and self-doping in ZnS nanostructures
DOI:10.1063/1.3677950 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Hafeez, M.;Manzoor, U.;Bhatti, A. S.;Kaynar, M. Burak;Shah, S. Ismat;
10:2:193 Visible light stimulating dual-wavelength emission and O vacancy involved energy transfer behavior in luminescence for coaxial nanocable arrays
DOI:10.1063/1.4883378 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Yang, Lei;Dong, Jiazhang;Jiang, Zhongcheng;Pan, Anlian;Zhuang, Xiujuan;
10:2:194 High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies
DOI:10.1063/1.4895340 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Xu, Xiaoyong;Xu, Chunxiang;Hu, Jingguo;
10:2:195 High performance ultraviolet photodetectors based on an individual Zn2SnO4 single crystalline nanowire
DOI:10.1039/c0jm02872j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:20 AU: Zhang, Yanjun;Wang, Jianjun;Zhu, Hongfei;Li, Hui;Jiang, Li;Shu, Chunying;Hu, Wenping;Wang, Chunru;
10:2:196 A high-performance UV/visible photodetector of Cu2O/ZnO hybrid nanofilms on SWNT-based flexible conducting substrates
DOI:10.1039/c4tc01585a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Liu, Xianbin;Du, Hejun;Wang, Penghua;Lim, Teik-Thye;Sun, Xiao Wei;
10:2:197 Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures
DOI:10.1016/j.materresbull.2012.03.006 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Rajalakshmi, M.;Sohila, S.;Ramesh, R.;Bhalerao, G. M.;
10:2:198 Photosensitive and temperature-dependent I-V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode
DOI:10.1016/j.mseb.2014.01.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:6 AU: Long, Hao;Ai, Lei;Li, Songzhan;Huang, Huihui;Mo, Xiaoming;Wang, Haoning;Chen, Zhao;Liu, Yuping;Fang, Guojia;
10:2:199 High efficient UV-A photodetectors based on monodispersed ligand-capped TiO2 nanocrystals and polyfluorene hybrids
DOI:10.1016/j.polymer.2010.05.057 JN:POLYMER PY:2010
TC:17 AU: Han, Yangang;Wu, Gang;Wang, Mang;Chen, Hongzheng;
10:2:200 Using Nanowires To Extract Excitons from a Nanocrystal Solid
DOI:10.1021/nn203227t JN:ACS NANO PY:2011
TC:8 AU: Dorn, August;Strasfeld, David B.;Harris, Daniel K.;Han, Hee-Sun;Bawendi, Moungi G.;
10:2:201 Surface plasmon coupling to nanoscale Schottky-type electrical detectors
DOI:10.1063/1.3503534 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Dufaux, Thomas;Dorfmueller, Jens;Vogelgesang, Ralf;Burghard, Marko;Kern, Klaus;
10:2:202 Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
DOI:10.1063/1.3672030 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Li, Dabing;Sun, Xiaojuan;Song, Hang;Li, Zhiming;Jiang, Hong;Chen, Yiren;Miao, Guoqing;Shen, Bo;
10:2:203 p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties
DOI:10.1063/1.4833275 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Wang, Ming-Zheng;Xie, Wei-Jie;Hu, Han;Yu, Yong-Qiang;Wu, Chun-Yan;Wang, Li;Luo, Lin-Bao;
10:2:204 Synthesis and Photoelectric Properties of Coaxial Schottky Junctions of ZnS and Carbon Nanotubes
DOI:10.1021/cm900929h JN:CHEMISTRY OF MATERIALS PY:2010
TC:17 AU: Wei, Dacheng;Liu, Yunqi;Cao, Lingchao;Zhang, Hongliang;Huang, Liping;Yu, Gui;
10:2:205 Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films
DOI:10.1016/j.jallcom.2013.03.039 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Wang, Rongxin;Yang, Lechen;Xu, Shijie;Zhang, Xiaodong;Dong, Xue;Zhao, Yingchun;Fu, Kai;Zhang, Baoshun;Yang, Hui;
10:2:206 Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer
DOI:10.1039/c3tc32242d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Zu, Baiyi;Lu, Bin;Guo, Yanan;Xu, Tao;Dou, Xincun;
10:2:207 Synthesis and nano-field-effect transistors of p-type Zn0.3Cd0.7Te nanoribbons
DOI:10.1016/j.matlet.2011.03.068 JN:MATERIALS LETTERS PY:2011
TC:7 AU: Li, Shanying;Jiang, Yang;Wu, Di;Wang, Binbin;Li, Junwei;Zhang, Yugang;Wang, Wenjun;Lan, Xinzheng;Zhong, Honghai;Chen, Lei;
10:2:208 Synthesis, characterization and optical properties of CdS nanowire/SnO2 nanoparticle nano-heterostructures
DOI:10.1016/j.matlet.2014.02.042 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Zhao, Jingang;Yin, Jingzhou;Hua, Zhenghe;
10:2:209 Construction of high-quality CdSe NB/graphene Schottky diodes for optoelectronic applications
DOI:10.1016/j.matlet.2014.06.005 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Zhang, Yanhua;Du, Lingzhi;Lei, Youan;Zhao, Haipeng;
10:2:210 Synthesis and characterization of ZnS tetrapods and ZnO/ZnS heterostructures
DOI:10.1016/j.tsf.2012.02.010 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Wang, Rongming;Liu, Wei;
10:2:211 p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer
DOI:10.1063/1.3501122 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Yuan, G. D.;Ng, T. W.;Zhou, Y. B.;Wang, F.;Zhang, W. J.;Tang, Y. B.;Wang, H. B.;Luo, L. B.;Wang, P. F.;Bello, I.;Lee, C. S.;Lee, S. T.;
10:2:212 Solar-blind photodiodes composed of a Au Schottky contact and a beta-Ga2O3 single crystal with a high resistivity cap layer
DOI:10.1063/1.3574911 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Suzuki, Rikiya;Nakagomi, Shinji;Kokubun, Yoshihiro;
10:2:213 Reliable self-powered highly spectrum-selective ZnO ultraviolet photodetectors
DOI:10.1063/1.4839495 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Shen, H.;Shan, C. X.;Li, B. H.;Xuan, B.;Shen, D. Z.;
10:2:214 The evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate
DOI:10.1063/1.4832063 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Liu, Chu;Ma, Yaoguang;Li, Weisen;Dai, Lun;
10:2:215 Ultrafast carrier dynamics in single-crystal In2Se3 thin layers
DOI:10.1063/1.4828558 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Tao, Xin;Mafi, Elham;Gu, Yi;
10:2:216 Interlayer-glide-driven isosymmetric phase transition in compressed In2Se3
DOI:10.1063/1.4879832 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ke, Feng;Liu, Cailong;Gao, Yang;Zhang, Junkai;Tan, Dayong;Han, Yonghao;Ma, Yanzhang;Shu, Jinfu;Yang, Wenge;Chen, Bin;Mao, Ho-Kwang;Chen, Xiao-Jia;Gao, Chunxiao;
10:2:217 Self-purification construction of interstitial O in the neighbor of Eu3+ ions to act as energy transfer bridge
DOI:10.1063/1.4863083 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Yang, Lei;Dong, Jiazhang;She, Yajuan;Jiang, Zhongcheng;Zhang, Lide;Yu, Hongbin;
10:2:218 Wide Range Photodetector Based on Catalyst Free Grown Indium Selenide Microwires
DOI:10.1021/am501933p JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Ali, Zulfiqar;Mirza, Misbah;Cao, Chuanbao;Butt, Faheem K.;Tanveer, M.;Tahir, Muhammad;Aslam, Imran;Idrees, Faryal;Safdar, Muhammad;
10:2:219 Nanosheet based SnO2 assembles grown on a flexible substrate
DOI:10.1016/j.apsusc.2014.03.149 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Zhang, Siwen;Yin, Bosi;Jiao, Yang;Liu, Yang;Qu, Fengyu;Wu, Xiang;
10:2:220 Investigation of UV photoresponse property of Al, N co-doped ZnO film
DOI:10.1016/j.jallcom.2013.05.014 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Saravanakumar, Balasubramaniam;Mohan, Rajneesh;Thiyagarajan, Kaliannan;Kim, Sang-Jae;
10:2:221 Self assembled flower like CdS-ZnO nanocomposite and its photo catalytic activity
DOI:10.1016/j.jallcom.2013.08.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:15 AU: Jana, T. K.;Pal, A.;Chatterjee, K.;
10:2:222 Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors
DOI:10.1063/1.4791760 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Yang, L. C.;Wang, R. X.;Xu, S. J.;Xing, Z.;Fan, Y. M.;Shi, X. S.;Fu, K.;Zhang, B. S.;
10:2:223 In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse
DOI:10.1039/c2jm33189f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:13 AU: Tian, Wei;Zhi, Chunyi;Zhai, Tianyou;Chen, Shimou;Wang, Xi;Liao, Meiyong;Golberg, Dmitri;Bando, Yoshio;
10:2:224 High-performance CdSe nanobelt based MESFETs and their application in photodetection
DOI:10.1039/c2jm32890a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:10 AU: Dai, Yu;Yu, Bin;Ye, Yu;Wu, Peicai;Meng, Hu;Dai, Lun;Qin, Guogang;
10:2:225 Synthesis of high-quality CdS nanowires and their application as humidity sensors
DOI:10.1016/j.matlet.2014.05.002 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Du, Lingzhi;Zhang, Yanhua;Lei, Youan;Zhao, Haipeng;
10:2:226 Network-bridge structure of CdSxSe1-x nanowire-based optical sensors
DOI:10.1088/0957-4484/21/50/505605 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Choi, Young-Jin;Park, Kyung-Soo;Park, Jae-Gwan;
10:2:227 Light intensity dependence of photocurrent gain in single-crystal diamond detectors
DOI:10.1103/PhysRevB.81.033304 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Liao, Meiyong;Wang, Xi;Teraji, Tokuyuku;Koizumi, Satoshi;Koide, Yasuo;
10:2:228 Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity
DOI:10.1063/1.3569590 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Peng, Qiang;Jie, Jiansheng;Xie, Chao;Wang, Li;Zhang, Xiwei;Wu, Di;Yu, Yongqiang;
10:2:229 Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties
DOI:10.1063/1.4833538 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Chen, R. S.;Wang, W. C.;Chan, C. H.;Lu, M. L.;Chen, Y. F.;Lin, H. C.;Chen, K. H.;Chen, L. C.;
10:2:230 Synthesis and optical properties modulation of ZnO/Eu2O3 nanocable arrays
DOI:10.1063/1.3509148 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Yang, Lei;She, Yajuan;Zhao, Shihua;Yue, Shihai;Wang, Qian;Hu, Aiping;Zhang, Wei;
10:2:231 Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires
DOI:10.1063/1.4790173 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kaiser, Uwe;Gies, Sebastian;Geburt, Sebastian;Riedel, Franziska;Ronning, Carsten;Heimbrodt, Wolfram;
10:2:232 An edge-contacted pn-heterojunction of a p-SWCNT/n-WO3 thin film
DOI:10.1039/c3tc30845f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Nguyen Minh Vuong;Hoang Nhat Hieu;Kim, Dojin;
10:2:233 Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties
DOI:10.1039/c4tc01034e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Wu, Di;Jiang, Yang;Yao, Xudong;Chang, Yajing;Zhang, Yugang;Yu, Yongqiang;Zhu, Zhifeng;Zhang, Yan;Lan, Xinzheng;Zhong, Honghai;
10:2:234 Fabrication, characterization, cathodoluminescence, and field-emission properties of silica (SiO2) nanostructures
DOI:10.1016/j.matchar.2012.08.001 JN:MATERIALS CHARACTERIZATION PY:2012
TC:2 AU: Xu, J. Q.;Onodera, H.;Sekiguchi, T.;Golberg, D.;Bando, Y.;Mori, T.;
10:2:235 High yield growth of uniform ZnS nanospheres with strong photoluminescence properties
DOI:10.1016/j.mseb.2012.10.032 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:2 AU: Li, Yuan;Li, Qing;Wu, Huijie;Zhang, Jin;Lin, Hua;Nie, Ming;Zhang, Yu;
10:2:236 Centimeter-long Ta3N5 nanobelts: synthesis, electrical transport, and photoconductive properties
DOI:10.1088/0957-4484/24/17/175701 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Wu, X. C.;Tao, Y. R.;Li, L.;Bando, Y.;Golberg, D.;
10:2:237 Self-Assembly of Graphenelike ZnO Superstructured Nanosheets and Their Application in Hybrid Photoconductors
DOI:10.1002/smll.201101732 JN:SMALL PY:2011
TC:11 AU: Yan, Han;Yu, Zai;Lu, Kun;Zhang, Yajie;Wei, Zhixiang;
10:2:238 High-Performance Photoconductive Channels Based on (Carbon Nanotube)-(CdS Nanowire) Hybrid Nanostructures
DOI:10.1002/smll.201102628 JN:SMALL PY:2012
TC:8 AU: Lee, Hyungwoo;Heo, Kwang;Maaroof, Abbas;Park, Yongju;Noh, Seunguk;Park, June;Jian, Jikang;Lee, Changhee;Seong, Maeng-Je;Hong, Seunghun;
10:2:239 Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition
DOI:10.1063/1.3478555 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Li, Zhong;Salfi, Joseph;De Souza, Christina;Sun, Ping;Nair, Selvakumar V.;Ruda, Harry E.;
10:2:240 High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
DOI:10.1063/1.3562326 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Sang, Liwen;Liao, Meiyong;Koide, Yasuo;Sumiya, Masatomo;
10:2:241 Absorption spectroscopy of individual cadmium selenide nanowire
DOI:10.1063/1.4739786 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Xiao, Fajun;Liu, Kaihui;Bie, Yaqing;Zhao, Jianlin;Wang, Feng;
10:2:242 Growth and fabrication of sputtered TiO2 based ultraviolet detectors
DOI:10.1016/j.apsusc.2013.12.142 JN:APPLIED SURFACE SCIENCE PY:2014
TC:6 AU: Huang, Huolin;Xie, Yannan;Zhang, Zifeng;Zhang, Feng;Xu, Qiang;Wu, Zhengyun;
10:2:243 Tailoring the electrical properties of tellurium nanowires via surface charge transfer doping
DOI:10.1007/s11051-012-0967-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Luo, Lin-Bao;Liang, Feng-Xia;Huang, Xiao-Li;Yan, Tian-Xin;Hu, Ji-Gang;Yu, Yong-Qiang;Wu, Chun-Yan;Wang, Li;Zhu, Zhi-Feng;Li, Qiang;Jie, Jian-Sheng;
10:2:244 Fabrication and optical properties of silicon nanowire/Cu2O nano-heterojunctions by electroless deposition technique
DOI:10.1016/j.matlet.2013.09.007 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Xiong, Zuzhou;Zheng, Maojun;Li, Hong;Ma, Li;Shen, Wenzhong;
10:2:245 Synthesis and electrical properties of ZnSe0.2Te0.8 nanowires
DOI:10.1016/j.matlet.2013.02.054 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Du, Lingzhi;Zhao, Yaqi;Lei, Youan;
10:2:246 Self-assembled ZnS nanowire arrays: synthesis, in situ Cu doping and field emission
DOI:10.1088/0957-4484/21/37/375601 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Liu, Baodan;Bando, Yoshio;Jiang, Xin;Li, Chun;Fang, Xiaosheng;Zeng, Haibo;Terao, Takeshi;Tang, Chengchun;Mitome, Masanori;Golberg, Dmitri;
10:2:247 Effects of an oxygen environment on the electrical properties of a single CdS nanobelt device
DOI:10.1088/0957-4484/22/13/135702 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: An, Jin;Xue, Kun;Xie, Weiguang;Li, Quan;Xu, Jianbin;
10:2:248 Flexible CuS nanotubes-ITO film Schottky junction solar cells with enhanced light harvesting by using an Ag mirror
DOI:10.1088/0957-4484/24/4/045402 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Wu, Chunyan;Zhang, Zihan;Wu, Yiliang;Lv, Peng;Nie, Biao;Luo, Linbao;Wang, Li;Hu, Jigang;Jie, Jiansheng;
10:2:249 Fabrication of beta-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology
DOI:10.1364/OME.4.001067 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:9 AU: Guo, Daoyou;Wu, Zhenping;Li, Peigang;An, Yuehua;Liu, Han;Guo, Xuncai;Yan, Hui;Wang, Guofeng;Sun, Changlong;Li, Linghong;Tang, Weihua;
10:2:250 Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films
DOI:10.1016/j.optmat.2014.10.033 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Yan, Yong;Li, Shasha;Yu, Zhou;Liu, Lian;Yan, Chuanpeng;Zhang, Yong;Zhao, Yong;
10:2:251 The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector
DOI:10.1063/1.4808381 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Wang, R. X.;Yang, L. C.;Zhang, Y. M.;Xu, S. J.;Fu, K.;Zhang, B. S.;Wang, J. F.;Xu, K.;Yang, H.;
10:2:252 Chemically synthesized nanowire TiO2/ZnO core-shell p-n junction array for high sensitivity ultraviolet photodetector
DOI:10.1063/1.4826921 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Dao, T. D.;Dang, C. T. T.;Han, G.;Hoang, C. V.;Yi, W.;Narayanamurti, V.;Nagao, T.;
10:2:253 Cerium-Doped Yttrium Aluminum Garnet Hollow Shell Phosphors Synthesized via the Kirkendall Effect
DOI:10.1021/am404809s JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Kim, Min Jeong;Park, Jong Hoon;Lee, Keel Yong;Lee, Sangwook;Han, Gill-Sang;Song, Hee Jo;Shin, Hyunjung;Ahn, Tae Kyu;Jung, Hyun Suk;
10:2:254 Electrospun ZnO Nanofibers-Based Ultraviolet Detector with High Responsivity
DOI:10.1111/jace.12483 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:5 AU: Zhu, Linghui;Gu, Xuehui;Qu, Fengdong;Zhang, Jiaqi;Feng, Caihui;Zhou, Jingran;Ruan, Shengping;Kang, Bonan;
10:2:255 ZnO nanowire based visible-transparent ultraviolet detectors on polymer substrates
DOI:10.1063/1.4714698 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:14 AU: Yu, Hongbin;Azhar, Ebraheem Ali;Belagodu, Tej;Lim, Swee;Dey, Sandwip;
10:2:256 Ultrahigh-sensitivity CdS photoconductors with instant response and ultralow power consumption for detection in low-light environments
DOI:10.1039/c3tc30520a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:6 AU: Lin, Keng-Te;Tseng, Shao-Chin;Chen, Hsuen-Li;Lai, Yu-Sheng;Chen, Szu-Huang;Tseng, Yi-Chuan;Chu, Ting-Wei;Lin, Ming-Yu;Lu, Yen-Pei;
10:2:257 Binary semiconductor In2Te3 for the application of phase-change memory device
DOI:10.1007/s10853-010-4401-z JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:7 AU: Zhu, Hao;Chen, Kai;Ge, Zhongyang;Xu, Hanni;Su, Yi;Yin, Jiang;Xia, Yidong;Liu, Zhiguo;
10:2:258 Compensating synthesis and electrical properties of p-type Zn0.7Cd0.3Se nanowires
DOI:10.1016/j.matlet.2012.06.016 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Li, Shanying;Liu, Xiangyun;Haipengzhao;Tian, Damin;
10:2:259 Self catalytic growth of SnO2 branched nanowires by thermal evaporation
DOI:10.1016/j.matlet.2012.10.075 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Kumar, R. Rakesh;Rao, K. Narasimha;Phani, A. R.;
10:2:260 Coaxial ZnSe/Si nanocables with controlled p-type shell doping
DOI:10.1088/0957-4484/21/28/285206 JN:NANOTECHNOLOGY PY:2010
TC:7 AU: Wang, Li;Jie, Jiansheng;Wu, Chunyan;Wang, Zhi;Yu, Yongqiang;Peng, Qiang;Zhang, Xiwei;Hu, Zhizhong;Wu, Di;Guo, Huier;Jiang, Yang;
10:2:261 Directed integration of ZnO nanobridge sensors using photolithographically patterned carbonized photoresist
DOI:10.1088/0957-4484/21/19/195307 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Huang, Chien-Chih;Pelatt, Brian D.;Conley, John F., Jr.;
10:2:262 Wide bandwidth lasing randomly assembled ZnS/ZnO biaxial nanobelt heterostructures
DOI:10.1063/1.3393997 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Yang, H. Y.;Yu, S. F.;Yan, J.;Zhang, L. D.;
10:2:263 Integration of flower-like ZnO nanostructures with crystalline-Si interdigitated back contact photovoltaic cell as a self-powered humidity sensor
DOI:10.1063/1.4832485 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Hsueh, Han-Ting;Chen, Yung-Hsiang;Lin, Yu-De;Lai, Kuang-Chieh;Chen, Jhih-Wei;Wu, Chung-Lin;
10:2:264 Preparation and characterization of ZnS:Fe/MX (M = Cd, Zn; X = S, Se) core-shell nanocrystals
DOI:10.1016/j.apsusc.2012.02.045 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Li, Lihua;Xie, Ruishi;Gu, Yongjun;Huang, Jinliang;Zhu, Jianguo;
10:2:265 In-situ annealing of In-Se amorphous precursors sputtered at low temperature
DOI:10.1016/j.jallcom.2014.06.145 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Yan, Yong;Li, Shasha;Ou, Yufeng;Ji, Yaxin;Liu, Lian;Yan, Chuanpeng;Zhang, Yong;Yu, Zhou;Zhao, Yong;
10:2:266 Essential role of catalysts (Mn, Au, and Sn) in the vapor liquid solid growth kinematics of ZnS nanowires
DOI:10.1063/1.4861392 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Rehman, S.;Shehzad, M. A.;Hafeez, M.;Bhatti, A. S.;
10:2:267 Achieving high sensitivity in hybrid photodetectors based on an organic single crystal and an inorganic nanocrystal array
DOI:10.1088/0957-4484/25/3/035202 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Chung, Dae Sung;Kim, Yun-Hi;Lee, Jong-Soo;
10:2:268 Size-dependent structural and electronic properties of ZnS nanofilms: An ab initio study
DOI:10.1063/1.3487954 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Zhang, Xuejuan;Zhang, Hongyu;He, Tao;Zhao, Mingwen;
10:2:269 Structural and Optical Characteristics of gamma-In2Se3 Nanorods Grown on Si Substrates
DOI:10.1155/2011/976262 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:1 AU: Yang, M. D.;Hu, C. H.;Tong, S. C.;Shen, J. L.;Lan, S. M.;Wu, C. H.;Lin, T. Y.;
10:2:270 Effects of geometric structure, orientation and size on structural stability and thermal behavior of zinc oxide nanowires
DOI:10.1016/j.materresbull.2011.05.035 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:0 AU: Su, Chien-Chan;Chen, Jun-Liang;
10:2:271 A flexible and transparent ceramic nanobelt network for soft electronics
DOI:10.1038/am.2013.83 JN:NPG ASIA MATERIALS PY:2014
TC:5 AU: Huang, Siya;Wu, Hui;Zhou, Ming;Zhao, Chunsong;Yu, Zongfu;Ruan, Zhichao;Pan, Wei;
10:2:272 Assembly of Three-Dimensional Hetero-Epitaxial InO/ZnS Core/Shell Nanorod and Single Crystalline Hollow ZnS Nanotube Arrays (vol 6, pg 7333, 2012)
DOI:10.1021/nn303871n JN:ACS NANO PY:2012
TC:3 AU: Huang, Xing;Wang, Meng;Willinger, Marc-Georg;Shao, Lidong;Su, Dang Sheng;Meng, Xiang-Min;
10:2:273 Self-powered ultraviolet photodetector base on a single Sb-doped ZnO nanobelt (vol 97, 223113, 2010)
DOI:10.1063/1.3533445 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Yang, Ya;Guo, Wen;Qi, Junjie;Zhao, Jing;Zhang, Yue;
10:2:274 Fourier-transform photocurrent spectroscopy using a supercontinuum light source
DOI:10.1063/1.3683514 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Petermann, Christian;Beigang, Rene;Fischer, Peer;
10:2:275 Using fluorescence measurement of zinc ions liberated from ZnS nanoparticle labels in bioassay for Escherichia coli O157:H7
DOI:10.1007/s11051-011-0528-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:0 AU: Cowles, Chad L.;Zhu, Xiaoshan;Pai, Chi-Yun;
10:2:276 Selective Synthesis of Zn1-xMnxSe Nanobelts and Nanotubes from [Zn1-xMnxSe](DETA)(0.5) Nanbelts in Solution (x=0-0.15) and Their EPR and Optical Properties
DOI:10.1021/la101595n JN:LANGMUIR PY:2010
TC:6 AU: Zhang, Meng;Lu, Yang;Chen, Jia-Fu;Zhang, Tie-Kai;Liu, You-Yu;Yang, Yuan;Yao, Wei-Tang;Yu, Shu-Hong;
10:2:277 Growth of ZnGa2O4 nanowires on a ZnO buffer layer by carbothermal reduction of Ga2O3 powder
DOI:10.1016/j.matlet.2011.02.041 JN:MATERIALS LETTERS PY:2011
TC:1 AU: Chang, Meng-Pang;Chiang, Ming-Hung;Lin, Wen-Tai;Lee, Ching-Ting;
10:2:278 Vertically aligned ZnO nanorods on flexible substrates for multifunctional device applications: Easy and cost-effective route
DOI:10.1016/j.matlet.2014.01.029 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Reddy, N. Koteeswara;Devika, M.;Tu, C. W.;
10:2:279 The study on crystal defects-involved energy transfer process of Eu3+ doped ZnO lattice
DOI:10.1016/j.matlet.2014.04.191 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Yang, Lei;Jiang, Zhongcheng;Dong, Jiazhang;Pan, Anlian;Zhuang, Xiujuan;
10:2:280 Preparation of ZnO nanosheets by a novel microemulsion-based hydrothermal method
DOI:10.1016/j.matchemphys.2011.12.004 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Jiang, Junying;Huang, Zaiyin;Tan, Shengwei;Li, Yanfen;Wang, Guotao;Tan, Xuecai;
10:2:281 Turning "on" and "off' nucleation and growth: Microwave assisted synthesis of CdS clusters and nanoparticles
DOI:10.1016/j.materresbull.2011.02.019 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Ferrer, Edmy;Nater, Sariann;Rivera, Daniel;Colon, Jean Marie;Zayas, Francisco;Gonzalez, Miguel;Castro, Miguel E.;
10:2:282 Large-scale assembly of highly flexible low-noise devices based on silicon nanowires
DOI:10.1088/0957-4484/21/14/145302 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Heo, Kwang;Park, Jee Woo;Yang, Jee-Eun;Koh, Juntae;Kwon, Ji-Hwan;Jhon, Young Min;Kim, Miyoung;Jo, Moon-Ho;Hong, Seunghun;
10:2:283 Chlorine-doped n-type CdS nanowires with enhanced photoconductivity (vol 21, 505203, 2010)
DOI:10.1088/0957-4484/22/6/069801 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Wu, Chunyan;Jie, Jiansheng;Wang, Li;Yu, Yongqiang;Peng, Qiang;Zhang, Xiwei;Cai, Jiajun;Guo, Huier;Wu, Di;Jiang, Yang;
10:2:284 Template-based sputtering method for vertically aligned Tin nanotube arrays: From fabrication to superconductivity
DOI:10.1016/j.tsf.2013.05.152 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Li, Changli;Zheng, Maojun;Li, Ming;Zhu, Changqing;Ma, Li;Wang, Xianghu;Li, Zhengping;Shen, Wenzhong;
10:3:1 Direct-Write Piezoelectric Polymeric Nanogenerator with High Energy Conversion Efficiency
DOI:10.1021/nl9040719 JN:NANO LETTERS PY:2010
TC:335 AU: Chang, Chieh;Tran, Van H.;Wang, Junbo;Fuh, Yiin-Kuen;Lin, Liwei;
10:3:2 Fiber-Based Wearable Electronics: A Review of Materials, Fabrication, Devices, and Applications
DOI:10.1002/adma.201400633 JN:ADVANCED MATERIALS PY:2014
TC:33 AU: Zeng, Wei;Shu, Lin;Li, Qiao;Chen, Song;Wang, Fei;Tao, Xiao-Ming;
10:3:3 Flexible High-Output Nanogenerator Based on Lateral ZnO Nanowire Array
DOI:10.1021/nl101973h JN:NANO LETTERS PY:2010
TC:255 AU: Zhu, Guang;Yang, Rusen;Wang, Sihong;Wang, Zhong Lin;
10:3:4 Energy Harvesting for Nanostructured Self-Powered Photodetectors
DOI:10.1002/adfm.201303367 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:18 AU: Peng, Lin;Hu, Linfeng;Fang, Xiaosheng;
10:3:5 1.6 V Nanogenerator for Mechanical Energy Harvesting Using PZT Nanofibers
DOI:10.1021/nl100812k JN:NANO LETTERS PY:2010
TC:257 AU: Chen, Xi;Xu, Shiyou;Yao, Nan;Shi, Yong;
10:3:6 Piezoelectric BaTiO3 Thin Film Nanogenerator on Plastic Substrates
DOI:10.1021/nl102959k JN:NANO LETTERS PY:2010
TC:186 AU: Park, Kwi-Il;Xu, Sheng;Liu, Ying;Hwang, Geon-Tae;Kang, Suk-Joong L.;Wang, Zhong Lin;Lee, Keon Jae;
10:3:7 Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications
DOI:10.1039/c3tc00597f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:29 AU: Varghese, Justin;Whatmore, Roger W.;Holmes, Justin D.;
10:3:8 One-Dimensional Nanostructures of Ferroelectric Perovskites
DOI:10.1002/adma.201004676 JN:ADVANCED MATERIALS PY:2011
TC:95 AU: Rorvik, Per Martin;Grande, Tor;Einarsrud, Mari-Ann;
10:3:9 Fully Rollable Transparent Nanogenerators Based on Graphene Electrodes
DOI:10.1002/adma.200903815 JN:ADVANCED MATERIALS PY:2010
TC:130 AU: Choi, Dukhyun;Choi, Min-Yeol;Choi, Won Mook;Shin, Hyeon-Jin;Park, Hyun-Kyu;Seo, Ju-Seok;Park, Jongbong;Yoon, Seon-Mi;Chae, Seung Jin;Lee, Young Hee;Kim, Sang-Woo;Choi, Jae-Young;Lee, Sang Yoon;Kim, Jong Min;
10:3:10 Piezoelectric Ribbons Printed onto Rubber for Flexible Energy Conversion
DOI:10.1021/nl903377u JN:NANO LETTERS PY:2010
TC:161 AU: Qi, Yi;Jafferis, Noah T.;Lyons, Kenneth, Jr.;Lee, Christine M.;Ahmad, Habib;McAlpine, Michael C.;
10:3:11 Self-Powered System with Wireless Data Transmission
DOI:10.1021/nl201505c JN:NANO LETTERS PY:2011
TC:133 AU: Hu, Youfan;Zhang, Yan;Xu, Chen;Lin, Long;Snyder, Robert L.;Wang, Zhong Lin;
10:3:12 GaN Nanowire Arrays for High-Output Nanogenerators
DOI:10.1021/ja909863a JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:108 AU: Huang, Chi-Te;Song, Jinhui;Lee, Wei-Fan;Ding, Yong;Gao, Zhiyuan;Hao, Yue;Chen, Lih-Juann;Wang, Zhong Lin;
10:3:13 High-Output Nanogenerator by Rational Unipolar Assembly of Conical Nanowires and Its Application for Driving a Small Liquid Crystal Display
DOI:10.1021/nl103203u JN:NANO LETTERS PY:2010
TC:106 AU: Hu, Youfan;Zhang, Yan;Xu, Chen;Zhu, Guang;Wang, Zhong Lin;
10:3:14 Enhanced Piezoelectricity and Stretchability in Energy Harvesting Devices Fabricated from Buckled PZT Ribbons
DOI:10.1021/nl104412b JN:NANO LETTERS PY:2011
TC:110 AU: Qi, Yi;Kim, Jihoon;Nguyen, Thanh D.;Lisko, Bozhena;Purohit, Prashant K.;McAlpine, Michael C.;
10:3:15 Flexible Nanocomposite Generator Made of BaTiO3 Nanoparticles and Graphitic Carbons
DOI:10.1002/adma.201200105 JN:ADVANCED MATERIALS PY:2012
TC:112 AU: Park, Kwi-Il;Lee, Minbaek;Liu, Ying;Moon, San;Hwang, Geon-Tae;Zhu, Guang;Kim, Ji Eun;Kim, Sang Ouk;Kim, Do Kyung;Wang, Zhong Lin;Lee, Keon Jae;
10:3:16 Self-Powered Nanosensors and Nanosystems
DOI:10.1002/adma.201102958 JN:ADVANCED MATERIALS PY:2012
TC:106 AU: Wang, Zhong Lin;
10:3:17 Sound-Driven Piezoelectric Nanowire-Based Nanogenerators
DOI:10.1002/adma.201001169 JN:ADVANCED MATERIALS PY:2010
TC:105 AU: Cha, Seung Nam;Seo, Ju-Seok;Kim, Seong Min;Kim, Hyun Jin;Park, Young Jun;Kim, Sang-Woo;Kim, Jong Min;
10:3:18 Replacing a Battery by a Nanogenerator with 20 V Output
DOI:10.1002/adma.201103727 JN:ADVANCED MATERIALS PY:2012
TC:88 AU: Hu, Youfan;Lin, Long;Zhang, Yan;Wang, Zhong Lin;
10:3:19 Energy harvesting based on semiconducting piezoelectric ZnO nanostructures
DOI:10.1016/j.nanoen.2012.02.001 JN:NANO ENERGY PY:2012
TC:67 AU: Kumar, Brijesh;Kim, Sang-Woo;
10:3:20 P-Type Polymer-Hybridized High-Performance Piezoelectric Nanogenerators
DOI:10.1021/nl204440g JN:NANO LETTERS PY:2012
TC:57 AU: Lee, Keun Young;Kumar, Brijesh;Seo, Ju-Seok;Kim, Kwon-Ho;Sohn, Jung Inn;Cha, Seung Nam;Choi, Dukhyun;Wang, Zhong Lin;Kim, Sang-Woo;
10:3:21 A Hybrid Piezoelectric Structure for Wearable Nanogenerators
DOI:10.1002/adma.201200150 JN:ADVANCED MATERIALS PY:2012
TC:97 AU: Lee, Minbaek;Chen, Chih-Yen;Wang, Sihong;Cha, Seung Nam;Park, Yong Jun;Kim, Jong Min;Chou, Li-Jen;Wang, Zhong Lin;
10:3:22 Porous PVDF As Effective Sonic Wave Driven Nanogenerators
DOI:10.1021/nl202208n JN:NANO LETTERS PY:2011
TC:78 AU: Cha, SeungNam;Kim, Seong Min;Kim, HyunJin;Ku, JiYeon;Sohn, Jung Inn;Park, Young Jun;Song, Byong Gwon;Jung, Myoung Hoon;Lee, Eun Kyung;Choi, Byoung Lyong;Park, Jong Jin;Wang, Zhong Lin;Kim, Jong Min;Kim, Kinam;
10:3:23 Pyroelectric Nanogenerators for Harvesting Thermoelectric Energy
DOI:10.1021/nl3003039 JN:NANO LETTERS PY:2012
TC:76 AU: Yang, Ya;Guo, Wenxi;Pradel, Ken C.;Zhu, Guang;Zhou, Yusheng;Zhang, Yan;Hu, Youfan;Lin, Long;Wang, Zhong Lin;
10:3:24 Lead-Free NaNbO3 Nanowires for a High Output Piezoelectric Nanogenerator
DOI:10.1021/nn2039033 JN:ACS NANO PY:2011
TC:82 AU: Jung, Jong Hoon;Lee, Minbaek;Hong, Jung-Il;Ding, Yong;Chen, Chih-Yen;Chou, Li-Jen;Wang, Zhong Lin;
10:3:25 Hybrid Nanogenerator for Concurrently Harvesting Biomechanical and Biochemical Energy
DOI:10.1021/nn100845b JN:ACS NANO PY:2010
TC:132 AU: Hansen, Benjamin J.;Liu, Ying;Yang, Rusen;Wang, Zhong Lin;
10:3:26 Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage
DOI:10.1002/adma.201000981 JN:ADVANCED MATERIALS PY:2010
TC:65 AU: Huang, Chi-Te;Song, Jinhui;Tsai, Chung-Min;Lee, Wei-Fan;Lien, Der-Hsien;Gao, Zhiyuan;Hao, Yue;Chen, Lih-Juann;Wang, Zhong Lin;
10:3:27 Piezoelectric nanofibers for energy scavenging applications
DOI:10.1016/j.nanoen.2012.02.003 JN:NANO ENERGY PY:2012
TC:71 AU: Chang, Jiyoung;Domnner, Michael;Chang, Chieh;Lin, Liwei;
10:3:28 Flexible Fiber Nanogenerator with 209 V Output Voltage Directly Powers a Light-Emitting Diode
DOI:10.1021/nl303539c JN:NANO LETTERS PY:2013
TC:43 AU: Gu, Long;Cui, Nuanyang;Cheng, Li;Xu, Qi;Bai, Suo;Yuan, Miaomiao;Wu, Weiwei;Liu, Jinmei;Zhao, Yong;Ma, Fei;Qin, Yong;Wang, Zhong Lin;
10:3:29 Lead Zirconate Titanate Nanowire Textile Nanogenerator for Wearable Energy-Harvesting and Self-Powered Devices
DOI:10.1021/nn3016585 JN:ACS NANO PY:2012
TC:61 AU: Wu, Weiwei;Bai, Suo;Yuan, Miaomiao;Qin, Yong;Wang, Zhong Lin;Jing, Tao;
10:3:30 A Nanogenerator for Energy Harvesting from a Rotating Tire and its Application as a Self-Powered Pressure/Speed Sensor
DOI:10.1002/adma.201102067 JN:ADVANCED MATERIALS PY:2011
TC:56 AU: Hu, Youfan;Xu, Chen;Zhang, Yan;Lin, Long;Snyder, Robert L.;Wang, Zhong Lin;
10:3:31 Surface free-carrier screening effect on the output of a ZnO nanowire nanogenerator and its potential as a self-powered active gas sensor
DOI:10.1088/0957-4484/24/22/225501 JN:NANOTECHNOLOGY PY:2013
TC:37 AU: Xue, Xinyu;Nie, Yuxin;He, Bin;Xing, Lili;Zhang, Yan;Wang, Zhong Lin;
10:3:32 Hybridizing Energy Conversion and Storage in a Mechanical-to-Electrochemical Process for Self-Charging Power Cell
DOI:10.1021/nl302879t JN:NANO LETTERS PY:2012
TC:64 AU: Xue, Xinyu;Wang, Sihong;Guo, Wenxi;Zhang, Yan;Wang, Zhong Lin;
10:3:33 Controlled Growth of Semiconducting Nanowire, Nanowall, and Hybrid Nanostructures on Graphene for Piezoelectric Nanogenerators
DOI:10.1021/nn200942s JN:ACS NANO PY:2011
TC:72 AU: Kumar, Brijesh;Lee, Keun Young;Park, Hyun-Kyu;Chae, Seung Jin;Lee, Young Hee;Kim, Sang-Woo;
10:3:34 Recent advances in power generation through piezoelectric nanogenerators
DOI:10.1039/c1jm13066h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:26 AU: Kumar, Brijesh;Kim, Sang-Woo;
10:3:35 Piezoelectric nanogenerators-Harvesting ambient mechanical energy at the nanometer scale
DOI:10.1016/j.nanoen.2011.09.001 JN:NANO ENERGY PY:2012
TC:68 AU: Wang, Xudong;
10:3:36 Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes
DOI:10.1021/nn301814w JN:ACS NANO PY:2012
TC:45 AU: Chen, Chih-Yen;Zhu, Guang;Hu, Youfan;Yu, Jeng-Wei;Song, Jinghui;Cheng, Kai-Yuan;Peng, Lung-Han;Chou, Li-Jen;Wang, Zhong Lin;
10:3:37 Performance Optimization of Vertical Nanowire- based Piezoelectric Nanogenerators
DOI:10.1002/adfm.201302157 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:10 AU: Hinchet, Ronan;Lee, Sangmin;Ardila, Gustavo;Montes, Laurent;Mouis, Mireille;Wang, Zhong Lin;
10:3:38 All-Solution-Processed Flexible Thin Film Piezoelectric Nanogenerator
DOI:10.1002/adma.201202708 JN:ADVANCED MATERIALS PY:2012
TC:29 AU: Chung, Sung Yun;Kim, Sunyoung;Lee, Ju-Hyuck;Kim, Kyongjun;Kim, Sang-Woo;Kang, Chong-Yun;Yoon, Seok-Jin;Kim, Youn Sang;
10:3:39 Flexible Piezoelectric PMN-PT Nanowire-Based Nanocomposite and Device
DOI:10.1021/nl400169t JN:NANO LETTERS PY:2013
TC:44 AU: Xu, Shiyou;Yeh, Yao-wen;Poirier, Gerald;McAlpine, Michael C.;Register, Richard A.;Yao, Nan;
10:3:40 Anisotropic Outputs of a Nanogenerator from Oblique-Aligned ZnO Nanowire Arrays
DOI:10.1021/nn202251m JN:ACS NANO PY:2011
TC:23 AU: Chen, Cheng-Ying;Huang, Jun-Han;Song, Jinhui;Zhou, Yusheng;Lin, Long;Huang, Po-Chien;Zhang, Yan;Liu, Chuan-Pu;He, Jr-Hau;Wang, Zhong Lin;
10:3:41 Hemispherically Aggregated BaTiO3 Nanoparticle Composite Thin Film for High-Performance Flexible Piezoelectric Nanogenerator
DOI:10.1021/nn406481k JN:ACS NANO PY:2014
TC:22 AU: Shin, Sung-Ho;Kim, Young-Hwan;Lee, Min Hyung;Jung, Joo-Yun;Nah, Junghyo;
10:3:42 Flexible and Large-Area Nanocomposite Generators Based on Lead Zirconate Titanate Particles and Carbon Nanotubes
DOI:10.1002/aenm.201300458 JN:ADVANCED ENERGY MATERIALS PY:2013
TC:28 AU: Park, Kwi-Il;Jeong, Chang Kyu;Ryu, Jungho;Hwang, Geon-Tae;Lee, Keon Jae;
10:3:43 Flexible Pyroelectric Nanogenerators using a Composite Structure of Lead-Free KNbO3 Nanowires
DOI:10.1002/adma.201201414 JN:ADVANCED MATERIALS PY:2012
TC:37 AU: Yang, Ya;Jung, Jong Hoon;Yun, Byung Kil;Zhang, Fang;Pradel, Ken C.;Guo, Wenxi;Wang, Zhong Lin;
10:3:44 Materials capability and device performance in flexible electronics for the Internet of Things
DOI:10.1039/c3tc31765j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:7 AU: Zhan, Yiqiang;Mei, Yongfeng;Zheng, Lirong;
10:3:45 Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion
DOI:10.1088/0957-4484/24/26/265707 JN:NANOTECHNOLOGY PY:2013
TC:11 AU: Araneo, Rodolfo;Falconi, Christian;
10:3:46 Thermoelectric Nanogenerators Based on Single Sb-Doped ZnO Micro/Nanobelts
DOI:10.1021/nn302481p JN:ACS NANO PY:2012
TC:32 AU: Yang, Ya;Pradel, Ken C.;Jing, Qingshen;Wu, Jyh Ming;Zhang, Fang;Zhou, Yusheng;Zhang, Yue;Wang, Zhong Lin;
10:3:47 Electricity Generation based on One-Dimensional Group-III Nitride Nanomaterials
DOI:10.1002/adma.200903442 JN:ADVANCED MATERIALS PY:2010
TC:51 AU: Wang, Xuebin;Song, Jinhui;Zhang, Fan;He, Chengyu;Hu, Zheng;Wang, Zhonglin;
10:3:48 Vertically Aligned Arrays of BaTiO3 Nanowires
DOI:10.1021/am403587q JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Zhou, Zhi;Tang, Haixiong;Sodano, Henry A.;
10:3:49 Sponge-Like Piezoelectric Polymer Films for Scalable and Integratable Nanogenerators and Self-Powered Electronic Systems
DOI:10.1002/aenm.201301624 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:16 AU: Mao, Yanchao;Zhao, Ping;McConohy, Geoffrey;Yang, Hao;Tong, Yexiang;Wang, Xudong;
10:3:50 Charge-Generating Mode Control in High-Performance Transparent Flexible Piezoelectric Nanogenerators
DOI:10.1002/adfm.201002099 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:35 AU: Park, Hyun-Kyu;Lee, Keun Young;Seo, Ju-Seok;Jeong, Jin-A;Kim, Han-Ki;Choi, Dukhyun;Kim, Sang-Woo;
10:3:51 Muscle-Driven In Vivo Nanogenerator
DOI:10.1002/adma.200904355 JN:ADVANCED MATERIALS PY:2010
TC:59 AU: Li, Zhou;Zhu, Guang;Yang, Rusen;Wang, Aurelia C.;Wang, Zhong Lin;
10:3:52 Compact Hybrid Cell Based on a Convoluted Nanowire Structure for Harvesting Solar and Mechanical Energy
DOI:10.1002/adma.201003696 JN:ADVANCED MATERIALS PY:2011
TC:49 AU: Xu, Chen;Wang, Zhong Lin;
10:3:53 Air/Liquid-Pressure and Heartbeat-Driven Flexible Fiber Nanogenerators as a Micro/Nano-Power Source or Diagnostic Sensor
DOI:10.1002/adma.201003161 JN:ADVANCED MATERIALS PY:2011
TC:44 AU: Li, Zetang;Wang, Zhong Lin;
10:3:54 Transparent flexible nanogenerator as self-powered sensor for transportation monitoring
DOI:10.1016/j.nanoen.2012.07.019 JN:NANO ENERGY PY:2013
TC:39 AU: Lin, Long;Hu, Youfan;Xu, Chen;Zhang, Yan;Zhang, Rui;Wen, Xiaonan;Wang, Zhong Lin;
10:3:55 Lead-Free Nanogenerator Made from Single ZnSnO3 Microbelt
DOI:10.1021/nn300951d JN:ACS NANO PY:2012
TC:26 AU: Wu, Jyh Ming;Xu, Chen;Zhang, Yan;Wang, Zhong Lin;
10:3:56 Flexible Hybrid Energy Cell for Simultaneously Harvesting Thermal, Mechanical, and Solar Energies
DOI:10.1021/nn305247x JN:ACS NANO PY:2013
TC:40 AU: Yang, Ya;Zhang, Hulin;Zhu, Guang;Lee, Sangmin;Lin, Zong-Hong;Wang, Zhong Lin;
10:3:57 Unidirectional High-Power Generation via Stress-Induced Dipole Alignment from ZnSnO3 Nanocubes/Polymer Hybrid Piezoelectric Nanogenerator
DOI:10.1002/adfm.201301379 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:27 AU: Lee, Keun Young;Kim, Dohwan;Lee, Ju-Hyuck;Kim, Tae Yun;Gupta, Manoj Kumar;Kim, Sang-Woo;
10:3:58 Self-Powered pH Sensor Based on a Flexible Organic-Inorganic Hybrid Composite Nanogenerator
DOI:10.1021/am5031648 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Saravanakumar, Balasubramaniam;Soyoon, Shin;Kim, Sang-Jae;
10:3:59 PVDF mesoporous nanostructures as the piezo-separator for a self-charging power cell
DOI:10.1016/j.nanoen.2014.09.004 JN:NANO ENERGY PY:2014
TC:6 AU: Xing, Lili;Nie, Yuxin;Xue, Xinyu;Zhang, Yan;
10:3:60 Hybrid cells for simultaneously harvesting multi-type energies for self-powered micro/nanosystems
DOI:10.1016/j.nanoen.2012.01.002 JN:NANO ENERGY PY:2012
TC:26 AU: Xu, Chen;Pan, Caofeng;Liu, Ying;Wang, Z. L.;
10:3:61 Wafer-Scale Nanopatterning and Translation into High-Performance Piezoelectric Nanowires
DOI:10.1021/nl102619c JN:NANO LETTERS PY:2010
TC:23 AU: Nguyen, Thanh D.;Nagarah, John M.;Qi, Yi;Nonnenmann, Stephen S.;Morozov, Anatoli V.;Li, Simonne;Arnold, Craig B.;McAlpine, Michael C.;
10:3:62 Pyroelectric Nanogenerators for Driving Wireless Sensors
DOI:10.1021/nl303755m JN:NANO LETTERS PY:2012
TC:22 AU: Yang, Ya;Wang, Sihong;Zhang, Yan;Wang, Zhong Lin;
10:3:63 Nanomaterials on flexible substrates to explore innovative functions: From energy harvesting to bio-integrated electronics
DOI:10.1016/j.tsf.2012.10.001 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Koo, Ja Hoon;Seo, Jungmok;Lee, Taeyoon;
10:3:64 Design Strategy for a Piezoelectric Nanogenerator with a Well-Ordered Nanoshell Array
DOI:10.1021/nn403940v JN:ACS NANO PY:2013
TC:7 AU: Seol, Myeong-Lok;Im, Hwon;Moon, Dong-Il;Woo, Jong-Ho;Kim, Daewon;Choi, Sung-Jin;Choi, Yang-Kyu;
10:3:65 Two-Dimensional Vanadium-Doped ZnO Nanosheet-Based Flexible Direct Current Nanogenerator
DOI:10.1021/nn403428m JN:ACS NANO PY:2013
TC:28 AU: Gupta, Manoj Kumar;Lee, Ju-Hyuck;Lee, Keun Young;Kim, Sang-Woo;
10:3:66 Layer-by-Layer Controlled Perovskite Nanocomposite Thin Films for Piezoelectric Nanogenerators
DOI:10.1002/adfm.201401599 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:1 AU: Kim, Younghoon;Lee, Keun Young;Hwang, Sun Kak;Park, Cheolmin;Kim, Sang-Woo;Cho, Jinhan;
10:3:67 Self-Powered Cardiac Pacemaker Enabled by Flexible Single Crystalline PMN-PT Piezoelectric Energy Harvester
DOI:10.1002/adma.201400562 JN:ADVANCED MATERIALS PY:2014
TC:23 AU: Hwang, Geon-Tae;Park, Hyewon;Lee, Jeong-Ho;Oh, SeKwon;Park, Kwi-Il;Byun, Myunghwan;Park, Hyelim;Ahn, Gun;Jeong, Chang Kyu;No, Kwangsoo;Kwon, HyukSang;Lee, Sang-Goo;Joung, Boyoung;Lee, Keon Jae;
10:3:68 Highly Stretchable Piezoelectric-Pyroelectric Hybrid Nanogenerator
DOI:10.1002/adma.201303570 JN:ADVANCED MATERIALS PY:2014
TC:35 AU: Lee, Ju-Hyuck;Lee, Keun Young;Gupta, Manoj Kumar;Kim, Tae Yun;Lee, Dae-Yeong;Oh, Junho;Ryu, Changkook;Yoo, Won Jong;Kang, Chong-Yun;Yoon, Seok-Jin;Yoo, Ji-Beom;Kim, Sang-Woo;
10:3:69 Electrical power generator from randomly oriented electrospun poly(vinylidene fluoride) nanofibre membranes
DOI:10.1039/c1jm11445j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:40 AU: Fang, Jian;Wang, Xungai;Lin, Tong;
10:3:70 Piezoelectric potential in vertically aligned nanowires for high output nanogenerators
DOI:10.1088/0957-4484/22/46/465401 JN:NANOTECHNOLOGY PY:2011
TC:37 AU: Romano, Giuseppe;Mantini, Giulia;Di Carlo, Aldo;D'Amico, Arnaldo;Falconi, Christian;Wang, Zhong Lin;
10:3:71 Paper-Based Piezoelectric Nanogenerators with High Thermal Stability
DOI:10.1002/smll.201100819 JN:SMALL PY:2011
TC:30 AU: Kim, Kwon-Ho;Lee, Keun Young;Seo, Ju-Seok;Kumar, Brijesh;Kim, Sang-Woo;
10:3:72 Super-Flexible Nanogenerator for Energy Harvesting from Gentle Wind and as an Active Deformation Sensor
DOI:10.1002/adfm.201202867 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:44 AU: Lee, Sangmin;Bae, Sung-Hwan;Lin, Long;Yang, Ya;Park, Chan;Kim, Sang-Woo;Cha, Seung Nam;Kim, Hyunjin;Park, Young Jun;Wang, Zhong Lin;
10:3:73 Flexible and Transparent Nanogenerators Based on a Composite of Lead-Free ZnSnO3 Triangular-Belts
DOI:10.1002/adma.201202445 JN:ADVANCED MATERIALS PY:2012
TC:22 AU: Wu, Jyh Ming;Xu, Chen;Zhang, Yan;Yang, Ya;Zhou, Yusheng;Wang, Zhong Lin;
10:3:74 Toward Robust Nanogenerators Using Aluminum Substrate
DOI:10.1002/adma.201201525 JN:ADVANCED MATERIALS PY:2012
TC:21 AU: Lee, Sangmin;Hong, Jung-Il;Xu, Chen;Lee, Minbaek;Kim, Dongseob;Lin, Long;Hwang, Woonbong;Wang, Zhong Lin;
10:3:75 Optical Fiber-Based Core-Shell Coaxially Structured Hybrid Cells for Self-Powered Nanosystems
DOI:10.1002/adma.201201315 JN:ADVANCED MATERIALS PY:2012
TC:20 AU: Pan, Caofeng;Guo, Wenxi;Dong, Lin;Zhu, Guang;Wang, Zhong Lin;
10:3:76 Highly-Effi cient, Flexible Piezoelectric PZT Thin Film Nanogenerator on Plastic Substrates
DOI:10.1002/adma.201305659 JN:ADVANCED MATERIALS PY:2014
TC:25 AU: Park, Kwi-Il;Son, Jung Hwan;Hwang, Geon-Tae;Jeong, Chang Kyu;Ryu, Jungho;Koo, Min;Choi, Insung;Lee, Seung Hyun;Byun, Myunghwan;Wang, Zhong Lin;Lee, Keon Jae;
10:3:77 Nanogenerator as self-powered vibration sensor
DOI:10.1016/j.nanoen.2011.12.006 JN:NANO ENERGY PY:2012
TC:32 AU: Yu, Aifang;Jiang, Peng;Wang, Zhong Lin;
10:3:78 Single Micro/Nanowire Pyroelectric Nanogenerators as Self-Powered Temperature Sensors
DOI:10.1021/nn303414u JN:ACS NANO PY:2012
TC:20 AU: Yang, Ya;Zhou, Yusheng;Wu, Jyh Ming;Wang, Zhong Lin;
10:3:79 Large piezoelectric coefficient and ferroelectric nanodomain switching in Ba(Ti0.80Zr0.20)O-3-0.5(Ba0.70Ca0.30)TiO3 nanofibers and thin
DOI:10.1063/1.4867013 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Jalalian, A.;Grishin, A. M.;Wang, X. L.;Cheng, Z. X.;Dou, S. X.;
10:3:80 Piezoelectric performance enhancement of ZnO flexible nanogenerator by a CuO-ZnO p-n junction formation
DOI:10.1039/c3tc31664e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:10 AU: Shin, Sung-Ho;Lee, Min Hyung;Jung, Joo-Yun;Seol, Jae Hun;Nah, Junghyo;
10:3:81 Piezoelectric nanogenerator with a nanoforest structure
DOI:10.1016/j.nanoen.2013.04.006 JN:NANO ENERGY PY:2013
TC:14 AU: Seol, Myeong-Lok;Choi, Ji-Min;Kim, Jee-Yeon;Ahn, Jae-Hyuk;Moon, Dong-Il;Choi, Yang-Kyu;
10:3:82 Portable room-temperature self-powered/active H-2 sensor driven by human motion through piezoelectric screening effect
DOI:10.1016/j.nanoen.2014.05.012 JN:NANO ENERGY PY:2014
TC:11 AU: Fu, Yongming;Zang, Weili;Wang, Penglei;Xing, Lili;Xue, Xinyu;Zhang, Yan;
10:3:83 Solvent-assisted optimal BaTiO3 nanoparticles-polymer composite cluster formation for high performance piezoelectric nanogenerators
DOI:10.1088/0957-4484/25/48/485401 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Shin, Sung-Ho;Kim, Young-Hwan;Jung, Joo-Yun;Lee, Min Hyung;Nah, Junghyo;
10:3:84 Lithium-Doped Zinc Oxide Nanowires-Polymer Composite for High Performance Flexible Piezoelectric Nanogenerator
DOI:10.1021/nn5046568 JN:ACS NANO PY:2014
TC:4 AU: Shin, Sung-Ho;Kim, Young-Hwan;Lee, Min Hyung;Jung, Joo-Yun;Seol, Jae Hun;Nah, Junghyo;
10:3:85 Study of the Piezoelectric Power Generation of ZnO Nanowire Arrays Grown by Different Methods
DOI:10.1002/adfm.201001203 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:42 AU: Riaz, Mohammed;Song, Jinhui;Nur, Omer;Wang, Zhong Lin;Willander, Magnus;
10:3:86 Scalable Synthesis of Morphotropic Phase Boundary Lead Zirconium Titanate Nanowires for Energy Harvesting
DOI:10.1002/adma.201403286 JN:ADVANCED MATERIALS PY:2014
TC:3 AU: Zhou, Zhi;Tang, Haixiong;Sodano, Henry A.;
10:3:87 Matrix-Assisted Energy Conversion in Nanostructured Piezoelectric Arrays
DOI:10.1021/nl102863c JN:NANO LETTERS PY:2010
TC:27 AU: Wang, Xianying;Kim, Kanguk;Wang, Yinmin;Stadermann, Michael;Noy, Aleksandr;Hamza, Alex V.;Yang, Junhe;Sirbuly, Donald J.;
10:3:88 Self-Compensated Insulating ZnO-Based Piezoelectric Nanogenerators
DOI:10.1002/adfm.201401998 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: Kim, Dohwan;Lee, Keun Young;Gupta, Manoj Kumar;Majumder, Subrata;Kim, Sang-Woo;
10:3:89 Piezoelectric nanogenerator based on zinc oxide nanorods grown on textile cotton fabric
DOI:10.1063/1.4766921 JN:APPLIED PHYSICS LETTERS PY:2012
TC:23 AU: Khan, Azam;Abbasi, Mazhar Ali;Hussain, Mushtaque;Ibupoto, Zafar Hussain;Wissting, Jonas;Nur, Omer;Willander, Magnus;
10:3:90 Piezo and photoelectric coupled nanogenerator using CdSe quantum dots incorporated ZnO nanowires in ITO/ZnO NW/Si structure
DOI:10.1016/j.matchemphys.2012.11.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: Kathalingam, A.;Valanarasu, S.;Senthilkumar, V.;Rhee, Jin-Koo;
10:3:91 Virus-Directed Design of a Flexible BaTiO3 Nanogenerator
DOI:10.1021/nn404659d JN:ACS NANO PY:2013
TC:31 AU: Jeong, Chang Kyu;Kim, Insu;Park, Kwi-Il;Oh, Mi Hwa;Paik, Haemin;Hwang, Geon-Tae;No, Kwangsoo;Nam, Yoon Sung;Lee, Keon Jae;
10:3:92 Hierarchically Ordered Nano-Heterostructured PZT Thin Films with Enhanced Ferroelectric Properties
DOI:10.1002/adfm.201303290 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:6 AU: Datta, Anuja;Mukherjee, Devajyoti;Witanachchi, Sarath;Mukherjee, Pritish;
10:3:93 Energy Harvesting from the Obliquely Aligned InN Nanowire Array with a Surface Electron-Accumulation Layer
DOI:10.1002/adma.201203416 JN:ADVANCED MATERIALS PY:2013
TC:7 AU: Ku, Nai-Jen;Wang, Chao-Hung;Huang, Jun-Han;Fang, Hsin-Chiao;Huang, Po-Chien;Liu, Chuan-Pu;
10:3:94 Impact of the GaN nanowire polarity on energy harvesting
DOI:10.1063/1.4880101 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Gogneau, Noelle;Chretien, Pascal;Galopin, Elisabeth;Guilet, Stephane;Travers, Laurent;Harmand, Jean-Christophe;Houze, Frederic;
10:3:95 Electricity generation based on vertically aligned PbZr0.2Ti0.8O3 nanowire arrays
DOI:10.1016/j.nanoen.2012.01.003 JN:NANO ENERGY PY:2012
TC:15 AU: Chen, Cheng-Ying;Liu, Te-Hsiang;Zhou, Yusheng;Zhang, Yan;Chueh, Yu-Lun;Chu, Ying-Hao;He, Jr-Hau;Wang, Zhong Lin;
10:3:96 Nanogenerator based on zinc blende CdTe micro/nanowires
DOI:10.1016/j.nanoen.2012.11.004 JN:NANO ENERGY PY:2013
TC:6 AU: Hou, Te-Chien;Yang, Ya;Lin, Zong-Hong;Ding, Yong;Park, Chan;Pradel, Ken C.;Chen, Lih-Juann;Wang, Zhong Lin;
10:3:97 High output nanogenerator based on assembly of GaN nanowires
DOI:10.1088/0957-4484/22/47/475401 JN:NANOTECHNOLOGY PY:2011
TC:25 AU: Lin, Long;Lai, Chen-Ho;Hu, Youfan;Zhang, Yan;Wang, Xue;Xu, Chen;Snyder, Robert L.;Chen, Lih-J;Wang, Zhong Lin;
10:3:98 GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors
DOI:10.1088/0957-4484/25/37/375502 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Salomon, S.;Eymery, J.;Pauliac-Vaujour, E.;
10:3:99 Piezoelectric Nanoparticle-Polymer Composite Foams
DOI:10.1021/am506415y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: McCall, William R.;Kim, Kanguk;Heath, Cory;La Pierre, Gina;Sirbuly, Donald J.;
10:3:100 Harvesting heat energy from hot/cold water with a pyroelectric generator
DOI:10.1039/c4ta01782j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:11 AU: Leng, Qiang;Chen, Lin;Guo, Hengyu;Liu, Jianlin;Liu, Guanlin;Hu, Chenguo;Xi, Yi;
10:3:101 Highly conductive PEDOT electrodes for harvesting dynamic energy through piezoelectric conversion
DOI:10.1039/c3ta14726f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:6 AU: Park, Teahoon;Kim, Byeonggwan;Kim, Younghoon;Kim, Eunkyoung;
10:3:102 Flexible piezoelectric nanogenerator made of poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) thin film
DOI:10.1016/j.nanoen.2014.04.016 JN:NANO ENERGY PY:2014
TC:5 AU: Pi, Zhaoyang;Zhang, Jingwei;Wen, Chenyu;Zhang, Zhi-bin;Wu, Dongping;
10:3:103 Lead-free KNbO3 ferroelectric nanorod based flexible nanogenerators and capacitors
DOI:10.1088/0957-4484/23/37/375401 JN:NANOTECHNOLOGY PY:2012
TC:18 AU: Jung, Jong Hoon;Chen, Chih-Yen;Yun, Byung Kil;Lee, Nuri;Zhou, Yusheng;Jo, William;Chou, Li-Jen;Wang, Zhong Lin;
10:3:104 Highly ordered Pb(Zr0.52Ti0.48)O-3 piezoelectric nanorod arrays
DOI:10.1088/0957-4484/24/22/225303 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Yang, Su Chul;Sanghadasa, Mohan;Priya, Shashank;
10:3:105 PMN-PT Nanowires with a Very High Piezoelectric Constant
DOI:10.1021/nl204334x JN:NANO LETTERS PY:2012
TC:12 AU: Xu, Shiyou;Poirier, Gerald;Yao, Nan;
10:3:106 Biotemplated Synthesis of PZT Nanowires
DOI:10.1021/nl4035708 JN:NANO LETTERS PY:2013
TC:5 AU: Cung, Kellye;Han, Booyeon J.;Nguyen, Thanh D.;Mao, Sheng;Yeh, Yao-Wen;Xu, Shiyou;Naik, Rajesh R.;Poirier, Gerald;Yao, Nan;Purohit, Prashant K.;McAlpine, Michael C.;
10:3:107 A Low-Frequency Energy Harvester from Ultralong, Vertically Aligned BaTiO3 Nanowire Arrays
DOI:10.1002/aenm.201301660 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:7 AU: Koka, Aneesh;Sodano, Henry A.;
10:3:108 Large-Area and Flexible Lead-Free Nanocomposite Generator Using Alkaline Niobate Particles and Metal Nanorod Filler
DOI:10.1002/adfm.201303484 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:21 AU: Jeong, Chang Kyu;Park, Kwi-Il;Ryu, Jungho;Hwang, Geon-Tae;Lee, Keon Jae;
10:3:109 Embossed Hollow Hemisphere-Based Piezoelectric Nanogenerator and Highly Responsive Pressure Sensor
DOI:10.1002/adfm.201302962 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Chun, Jinsung;Lee, Keun Young;Kang, Chong-Yun;Kim, Myung Wha;Kim, Sang-Woo;Baik, Jeong Min;
10:3:110 Cooperativity in the Enhanced Piezoelectric Response of Polymer Nanowires
DOI:10.1002/adma.201403169 JN:ADVANCED MATERIALS PY:2014
TC:4 AU: Persano, Luana;Dagdeviren, Canan;Maruccio, Claudio;De Lorenzis, Laura;Pisignano, Dario;
10:3:111 Synthesis of High Crystallinity ZnO Nanowire Array on Polymer Substrate and Flexible Fiber-Based Sensor
DOI:10.1021/am200797f JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:27 AU: Liu, Jinmei;Wu, Weiwei;Bai, Suo;Qin, Yong;
10:3:112 Electrospinning lead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 nanowires and their application in energy harvesting
DOI:10.1039/c3ta10792b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:13 AU: Wu, Weiwei;Cheng, Li;Bai, Suo;Dou, Wei;Xu, Qi;Wei, Zhiyang;Qin, Yong;
10:3:113 Piezoelectric nanogenerators synthesized using KNbO3 nanowires with various crystal structures
DOI:10.1039/c4ta03551h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:1 AU: Joung, Mi-Ri;Xu, Haibo;Seo, In-Tae;Kim, Dae-Hyeon;Hur, Joon;Nahm, Sahn;Kang, Chong-Yun;Yoon, Seok-Jin;Park, Hyun-Min;
10:3:114 High temperature processed ZnO nanorods using flexible and transparent mica substrates for dye-sensitized solar cells and piezoelectric nanogenerators
DOI:10.1016/j.nanoen.2014.07.004 JN:NANO ENERGY PY:2014
TC:7 AU: Kim, Do Yeob;Lee, Sangmin;Lin, Zong-Hong;Choi, Kyoung Hwan;Doo, Seok Gwang;Chang, Hyuk;Leem, Jae-Young;Wang, Zhong Lin;Kim, Sung-O;
10:3:115 Handwriting enabled harvested piezoelectric power using ZnO nanowires/polymer composite on paper substrate
DOI:10.1016/j.nanoen.2014.07.014 JN:NANO ENERGY PY:2014
TC:1 AU: Nour, E. S.;Sandberg, M. O.;Willander, M.;Nur, O.;
10:3:116 Enhanced power output of an electrospun PVDF/MWCNTs-based nanogenerator by tuning its conductivity
DOI:10.1088/0957-4484/24/40/405401 JN:NANOTECHNOLOGY PY:2013
TC:15 AU: Yu, Hao;Huang, Tao;Lu, Mingxia;Mao, Mengye;Zhang, Qinghong;Wang, Hongzhi;
10:3:117 Synthesis of CdS nanorod arrays and their applications in flexible piezo-driven active H2S sensors
DOI:10.1088/0957-4484/25/7/075501 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Wang, Penglei;Deng, Ping;Nie, Yuxin;Zhao, Yayu;Zhang, Yan;Xing, Lili;Xue, Xinyu;
10:3:118 Ultrathin Nanogenerators as Self-Powered/Active Skin Sensors for Tracking Eye Ball Motion
DOI:10.1002/adfm.201301971 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:22 AU: Lee, Sangmin;Hinchet, Ronan;Lee, Yean;Yang, Ya;Lin, Zong-Hong;Ardila, Gustavo;Montes, Laurent;Mouis, Mireille;Wang, Zhong Lin;
10:3:119 Energy harvesting from nanofibers of hybrid organic ferroelectric dabcoHReO(4)
DOI:10.1063/1.4862437 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Isakov, D.;de Matos Gomes, E.;Almeida, B.;Kholkin, A. L.;Zelenovskiy, P.;Neradovskiy, M.;Shur, V. Ya;
10:3:120 Time-dependent degradation of Pt/ZnO nanoneedle rectifying contact based piezoelectric nanogenerator
DOI:10.1063/1.3553862 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Periasamy, C.;Chakrabarti, P.;
10:3:121 Single crystalline lead zirconate titanate (PZT) nano/micro-wire based self-powered UV sensor
DOI:10.1016/j.nanoen.2012.09.001 JN:NANO ENERGY PY:2012
TC:22 AU: Bai, Suo;Xu, Qi;Gu, Long;Ma, Fei;Qin, Yong;Wang, Zhong Lin;
10:3:122 Controlled synthesis of ultra-long vertically aligned BaTiO3 nanowire arrays for sensing and energy harvesting applications
DOI:10.1088/0957-4484/25/37/375603 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Koka, Aneesh;Zhou, Zhi;Tang, Haixiong;Sodano, Henry A.;
10:3:123 The conversion of PN-junction influencing the piezoelectric output of a CuO/ZnO nanoarray nanogenerator and its application as a room-temperature self-powered active H2S sensor
DOI:10.1088/0957-4484/25/26/265501 JN:NANOTECHNOLOGY PY:2014
TC:10 AU: Nie, Yuxin;Deng, Ping;Zhao, Yayu;Wang, Penglei;Xing, Lili;Zhang, Yan;Xue, Xinyu;
10:3:124 Growth and Characterization of Ternary AlGaN Alloy Nanocones across the Entire Composition Range
DOI:10.1021/nn1029845 JN:ACS NANO PY:2011
TC:27 AU: He, Chengyu;Wu, Qiang;Wang, Xizhang;Zhang, Yongliang;Yang, Lijun;Liu, Ning;Zhao, Yu;Lu, Yinong;Hu, Zheng;
10:3:125 Oriented Single-Crystal-like Molecular Arrangement of Optically Nonlinear 2-Methyl-4-nitroaniline in Electrospun Nanofibers
DOI:10.1021/nn101413x JN:ACS NANO PY:2011
TC:14 AU: Isakov, Dmitry V.;Gomes, Etelvina de Matos;Vieira, Luis G.;Dekola, Tatsiana;Belsley, Michael S.;Almeida, Bernardo G.;
10:3:126 Spontaneous High Piezoelectricity in Poly(vinylidene fluoride) Nanoribbons Produced by Iterative Thermal Size Reduction Technique
DOI:10.1021/nn503269b JN:ACS NANO PY:2014
TC:5 AU: Kanik, Mehmet;Aktas, Ozan;Sen, Huseyin Sener;Durgun, Engin;Bayindir, Mehmet;
10:3:127 Generating Electricity from Biofluid with a Nanowire-Based Biofuel Cell for Self-Powered Nanodevices
DOI:10.1002/adma.201002519 JN:ADVANCED MATERIALS PY:2010
TC:40 AU: Pan, Caofeng;Fang, Ying;Wu, Hui;Ahmad, Mashkoor;Luo, Zhixiang;Li, Qiang;Xie, Jianbo;Yan, Xinxu;Wu, Lihua;Wang, Zhong Lin;Zhu, Jing;
10:3:128 An electrostatic nanogenerator based on ZnO/ZnS core/shell electrets with stabilized quasi-permanent charge
DOI:10.1063/1.4884366 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wang, Chao;Cai, Liang;Feng, Yajuan;Chen, Lin;Yan, Wensheng;Liu, Qinghua;Yao, Tao;Hu, Fengchun;Pan, Zhiyun;Sun, Zhihu;Wei, Shiqiang;
10:3:129 Influence of the metal-semiconductor contact by energy harvesting from vertically aligned zinc oxide nanowires
DOI:10.1063/1.4871376 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Comjani, F. Fattahi;Willer, U.;Kontermann, S.;Schade, W.;
10:3:130 Enhanced performance of wearable piezoelectric nanogenerator fabricated by two-step hydrothermal process
DOI:10.1063/1.4869118 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Qiu, Yu;Lei, Jixue;Yang, Dechao;Yin, Bing;Zhang, Heqiu;Bian, Jiming;Ji, Jiuyu;Liu, Yanhong;Zhao, Yu;Luo, Yingmin;Hu, Lizhong;
10:3:131 Controlled Ti Seed Layer Assisted Growth and Field Emission Properties of Pb(Zr0.52Ti0.48)O-3 Nanowire Arrays
DOI:10.1021/am4012879 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Datta, Anuja;Mukherjee, Devajyoti;Hordagoda, Mahesh;Witanachchi, Sarath;Mukherjee, Pritish;Kashid, Ranjit V.;More, Mahendra A.;Joag, Dilip S.;Chavan, Padmakar G.;
10:3:132 Effects of Substrate on Piezoelectricity of Electrospun Poly(vinylidene fluoride)-Nanofiber-Based Energy Generators
DOI:10.1021/am405684m JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Lee, Byoung-Sun;Park, Boongik;Yang, Ho-Sung;Han, Jin Woo;Choong, Chweelin;Bae, Jihyun;Lee, Kihwan;Yu, Woong-Ryeol;Jeong, Unyong;Chung, U-In;Park, Jong-Jin;Kim, Ohyun;
10:3:133 Piezoelectricity in lead zirconate titanate nanowires: A theoretical study
DOI:10.1063/1.4737257 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Sen, Banani;Stroscio, Michael;Dutta, Mitra;
10:3:134 Microstructure, Phase Transition, and Piezoelectric Properties of Cerium-Substituted Bismuth Titanate Nanofibers
DOI:10.1007/s11664-012-1934-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Jiang, Bo;Tang, Minghua;Li, Jiancheng;Xiao, Yongguang;Tao, Haizheng;Zhou, Yichun;He, John;
10:3:135 A highly flexible and substrate-independent self-powered deformation sensor based on massively aligned piezoelectric nano-/microfibers
DOI:10.1039/c4ta01720j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:3 AU: Fuh, Yiin-Kuen;Ye, Jia-Cheng;Chen, Po-Chou;Huang, Zih-Ming;
10:3:136 Vibtrational energy harvesting using photo-patternable piezoelectric nanocomposite cantilevers
DOI:10.1016/j.nanoen.2013.03.013 JN:NANO ENERGY PY:2013
TC:2 AU: Prashanthi, K.;Miriyala, N.;Gaikwad, R. D.;Moussa, W.;Rao, V. Ramgopal;Thundat, T.;
10:3:137 A nanogenerator as a self-powered sensor for measuring the vibration spectrum of a drum membrane
DOI:10.1088/0957-4484/24/5/055501 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Yu, Aifang;Zhao, Yong;Jiang, Peng;Wang, Zhong Lin;
10:3:138 Magnetic Force Driven Nanogenerators as a Noncontact Energy Harvester and Sensor
DOI:10.1021/nl301490q JN:NANO LETTERS PY:2012
TC:14 AU: Cui, Nuanyang;Wu, Weiwei;Zhao, Yong;Bai, Suo;Meng, Leixin;Qin, Yong;Wang, Zhong Lin;
10:3:139 Functional Electrical Stimulation by Nanogenerator with 58 V Output Voltage
DOI:10.1021/nl300972f1 JN:NANO LETTERS PY:2012
TC:73 AU: Zhu, Guang;Wang, Aurelia C.;Liu, Ying;Zhou, Yusheng;Wang, Zhong Lin;
10:3:140 3D Optical Printing of Piezoelectric Nanoparticle - Polymer Composite Materials
DOI:10.1021/nn503268f JN:ACS NANO PY:2014
TC:7 AU: Kim, Kanguk;Zhu, Wei;Qu, Xin;Aaronson, Chase;McCall, William R.;Chen, Shaochen;Sirbuly, Donald J.;
10:3:141 A Scalable Nanogenerator Based on Self-Poled Piezoelectric Polymer Nanowires with High Energy Conversion Efficiency
DOI:10.1002/aenm.201400519 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:5 AU: Whiter, Richard A.;Narayan, Vijay;Kar-Narayan, Sohini;
10:3:142 Biocompatible Nanogenerators through High Piezoelectric Coefficient 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 Nanowires for In-Vivo Applications
DOI:10.1002/adma.201402868 JN:ADVANCED MATERIALS PY:2014
TC:6 AU: Yuan, Miaomiao;Cheng, Li;Xu, Qi;Wu, Weiwei;Bai, Suo;Gu, Long;Wang, Zhe;Lu, Jun;Li, Huanping;Qin, Yong;Jing, Tao;Wang, Zhong Lin;
10:3:143 Electromechanical Conversion Behavior of K0.5Na0.5NbO3 Nanorods Synthesized by Hydrothermal Method
DOI:10.1080/10584587.2013.780147 JN:INTEGRATED FERROELECTRICS PY:2013
TC:2 AU: Wang, Zhao;Hu, Yongming;Wang, Wei;Zhou, Di;Wang, Yu;Gu, Haoshuang;
10:3:144 Influence of carrier concentration on piezoelectric potential in a bent ZnO nanorod
DOI:10.1063/1.3517828 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Shao, Zhengzheng;Wen, Liaoyong;Wu, Dongmin;Zhang, Xueao;Chang, Shengli;Qin, Shiqiao;
10:3:145 Modification of Indium Tin Oxide with Persulfate-Based Photochemistry Toward Facile, Rapid, and Low-Temperature Interface-Mediated Multicomponent Assembling
DOI:10.1021/la5004963 JN:LANGMUIR PY:2014
TC:3 AU: Mu, Xiaoyan;Guo, Shulei;Zhang, Linyuan;Yang, Peng;
10:3:146 Hydrothermal growth of highly textured BaTiO3 films composed of nanowires
DOI:10.1088/0957-4484/24/9/095602 JN:NANOTECHNOLOGY PY:2013
TC:11 AU: Zhou, Zhi;Lin, Yirong;Tang, Haixiong;Sodano, Henry A.;
10:3:147 Silicon Nanowires with Permanent Electrostatic Charges for Nanogenerators
DOI:10.1021/nl2027266 JN:NANO LETTERS PY:2011
TC:16 AU: Que, Ronghui;Shao, Mingwang;Wang, Suidong;Ma, Dorothy Duo Duo;Lee, Shuit-Tong;
10:3:148 Nanoscale Ferroelectric and Piezoelectric Properties of Sb2S3 Nanowire Arrays
DOI:10.1021/nl2039106 JN:NANO LETTERS PY:2012
TC:18 AU: Varghese, Justin;Barth, Sven;Keeney, Lynette;Whatmore, Roger W.;Holmes, Justin D.;
10:3:149 Taper PbZr0.2Ti0.8O3 Nanowire Arrays: From Controlled Growth by Pulsed Laser Deposition to Piezopotential Measurements
DOI:10.1021/nn300370m JN:ACS NANO PY:2012
TC:10 AU: Chen, Yu-Ze;Liu, Te-Hsiang;Chen, Cheng-Ying;Liu, Chin-Hung;Chen, Szu-Ying;Wu, Wen-Wei;Wang, Zhong Lin;He, Jr-Hau;Chu, Ying-Hao;Chueh, Yu-Lun;
10:3:150 Flexible Self-Charging Power Cell for One-Step Energy Conversion and Storage
DOI:10.1002/aenm.201301329 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:9 AU: Xue, Xinyu;Deng, Ping;He, Bin;Nie, Yuxin;Xing, Lili;Zhang, Yan;Wang, Zhong Lin;
10:3:151 Massively parallel aligned microfibers-based harvester deposited via in situ, oriented poled near-field electrospinning
DOI:10.1063/1.4813909 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Fuh, Yiin-Kuen;Chen, Shao-Yu;Ye, Jia-Cheng;
10:3:152 Performance enhanced piezoelectric ZnO nanogenerators with highly rough Au electrode surfaces on ZnO submicrorod arrays
DOI:10.1063/1.4813543 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Ko, Yeong Hwan;Lee, Soo Hyun;Yu, Jae Su;
10:3:153 High-efficiency micro-energy generation based on free-carrier-modulated ZnO:N piezoelectric thin films
DOI:10.1063/1.4880935 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Lee, Eunju;Park, Jaedon;Yim, Munhyuk;Jeong, Sangbeom;Yoon, Giwan;
10:3:154 Poly(methyl methacrylate)/Graphene Oxide Layered Films as Generators for Mechanical Energy Harvesting
DOI:10.1021/am400388f JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:0 AU: Valentini, Luca;Bon, Silvia Bittolo;Kenny, Jose M.;
10:3:155 Ferroelectric Poly(vinylidene fluoride) Homopolymer Nanotubes Derived from Solution in Anodic Alumina Membrane Template
DOI:10.1021/cm3028466 JN:CHEMISTRY OF MATERIALS PY:2013
TC:10 AU: Li, Xue;Lim, Yee-Fun;Yao, Kui;Tay, Francis Eng Hock;Seah, Kar Heng;
10:3:156 Synthesis and Size Control of Tetragonal Barium Titanate Nanopowders by Facile Solvothermal Method
DOI:10.1111/j.1551-2916.2012.05085.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:15 AU: Lee, Hyun-Wook;Moon, San;Choi, Chang-Hak;Kim, Do Kyung;
10:3:157 A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile
DOI:10.1063/1.4890306 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Khan, Azam;Edberg, Jesper;Nur, Omer;Willander, Magnus;
10:3:158 Mapping of strain-piezopotential relationship along bent zinc oxide microwires
DOI:10.1016/j.nanoen.2013.05.008 JN:NANO ENERGY PY:2013
TC:3 AU: Geng, Datong;Pook, Alex;Wang, Xudong;
10:3:159 Flexible hybrid cell for simultaneously harvesting thermal and mechanical energies
DOI:10.1016/j.nanoen.2013.02.004 JN:NANO ENERGY PY:2013
TC:6 AU: Lee, Sangmin;Bae, Sung-Hwan;Lin, Long;Ahn, Seunghyun;Park, Chan;Kim, Sang-Woo;Cha, Seung Nam;Park, Young Jun;Wang, Zhong Lin;
10:3:160 Piezoelectric ZnO nanorod carpet as a NEMS vibrational energy harvester
DOI:10.1016/j.nanoen.2014.07.023 JN:NANO ENERGY PY:2014
TC:3 AU: Nabar, Bhargav. P.;Celik-Butler, Zeynep;Butler, Donald P.;
10:3:161 Hybrid energy harvester based on nanopillar solar cells and PVDF nanogenerator
DOI:10.1088/0957-4484/24/17/175402 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Lee, Dae-Yeong;Kim, Hyunjin;Li, Hua-Min;Jang, A-Rang;Lim, Yeong-Dae;Cha, Seung Nam;Park, Young Jun;Kang, Dae Joon;Yoo, Won Jong;
10:3:162 Pattern transfer of aligned metal nano/microwires as flexible transparent electrodes using an electrospun nanofiber template
DOI:10.1088/0957-4484/24/5/055301 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Fuh, Yiin-Kuen;Lien, Li-Chih;
10:3:163 Self-Connected and Habitually Tilted Piezoelectric Nanorod Array
DOI:10.1021/nn202985q JN:ACS NANO PY:2011
TC:4 AU: Yu, Hak Ki;Baik, Jeong Min;Lee, Jong-Lam;
10:3:164 Printed Piezoelectric Energy Harvesting Device
DOI:10.1002/aenm.201300427 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:1 AU: Ali, Moazzam;Prakash, Deep;Zillger, Tino;Singh, Pradeep Kumar;Huebler, Arved Carl;
10:3:165 High-Power Density Piezoelectric Energy Harvesting Using Radially Strained Ultrathin Trigonal Tellurium Nanowire Assembly
DOI:10.1002/adma.201300657 JN:ADVANCED MATERIALS PY:2013
TC:11 AU: Lee, Tae Il;Lee, Sangmin;Lee, Eungkyu;Sohn, Sungwoo;Lee, Yean;Lee, Sujeong;Moon, Geondae;Kim, Dohyang;Kim, Youn Sang;Myoung, Jae Min;Wang, Zhong Lin;
10:3:166 Enhanced output of nanostructured piezoelectric arrays via controlled matrix/transducer interfacial interactions
DOI:10.1063/1.4767384 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Kim, Kanguk;Sirbuly, Donald J.;
10:3:167 Centrifugal electrospinning of highly aligned polymer nanofibers over a large area
DOI:10.1039/c2jm33877g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:9 AU: Edmondson, Dennis;Cooper, Ashleigh;Jana, Soumen;Wood, David;Zhang, Miqin;
10:3:168 Robust Nanogenerator Based on Vertically Aligned ZnO Nanorods Using Copper Substrate
DOI:10.1155/2013/861017 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Sheikh, Naveed;Afzulpurkar, Nitin;Ashraf, Muhammad Waseem;
10:3:169 Fabrication and piezoelectric property of PMN-PT nanofibers
DOI:10.1016/j.nanoen.2012.03.011 JN:NANO ENERGY PY:2012
TC:9 AU: Xu, Shiyou;Poirier, Gerald;Yao, Nan;
10:3:170 PVDF-PZT nanocomposite film based self-charging power cell
DOI:10.1088/0957-4484/25/10/105401 JN:NANOTECHNOLOGY PY:2014
TC:4 AU: Zhang, Yan;Zhang, Yujing;Xue, Xinyu;Cui, Chunxiao;He, Bin;Nie, Yuxin;Deng, Ping;Wang, Zhong Lin;
10:3:171 A flexible piezoelectric force sensor based on PVDF fabrics
DOI:10.1088/0964-1726/20/4/045009 JN:SMART MATERIALS & STRUCTURES PY:2011
TC:22 AU: Wang, Y. R.;Zheng, J. M.;Ren, G. Y.;Zhang, P. H.;Xu, C.;
10:3:172 Flexible Inorganic Piezoelectric Acoustic Nanosensors for Biomimetic Artificial Hair Cells
DOI:10.1002/adfm.201402270 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:7 AU: Lee, Hyun Soo;Chung, Juyong;Hwang, Geon-Tae;Jeong, Chang Kyu;Jung, Youngdo;Kwak, Jun-Hyuk;Kang, Hanmi;Byun, Myunghwan;Kim, Wan Doo;Hur, Shin;Oh, Seung-Ha;Lee, Keon Jae;
10:3:173 Single-Pore Membranes Gated by Microelectromagnetic Traps
DOI:10.1002/adma.201000566 JN:ADVANCED MATERIALS PY:2010
TC:8 AU: Basore, Joseph R.;Lavrik, Nickolay V.;Baker, Lane A.;
10:3:174 PZT Nanoactive Fiber Composites for Acoustic Emission Detection
DOI:10.1002/adma.201101592 JN:ADVANCED MATERIALS PY:2011
TC:6 AU: Chen, Xi;Li, Jinwei;Zhang, Guitao;Shi, Yong;
10:3:175 In-Plane Mechanical Response of TiO2 Nanotube Arrays - Intrinsic Properties and Impact of Adsorbates for Sensor Applications
DOI:10.1002/adma.201101286 JN:ADVANCED MATERIALS PY:2011
TC:8 AU: Fischer, K.;Mayr, S. G.;
10:3:176 Surface Roughness Assisted Growth of Vertically Oriented Ferroelectric SbSI Nanorods
DOI:10.1021/cm301928w JN:CHEMISTRY OF MATERIALS PY:2012
TC:4 AU: Varghese, Justin;O'Regan, Cohn;Deepak, Nitin;Whatmore, Roger W.;Homes, Justin D.;
10:3:177 Structural variation of hydrothermally synthesized KNbO3 nanowires
DOI:10.1063/1.4729266 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Joung, Mi-Ri;Xu, HaiBo;Kim, Jin-Seong;Seo, In-Tae;Nahm, Sahn;Kang, Jong-Yun;Yoon, Seok-Jin;
10:3:178 Electro-mechanical coupling properties of piezoelectric nanocomposites with coated elliptical nano-fibers under anti-plane shear
DOI:10.1063/1.4863615 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Fang, Xue-Qian;Huang, Ming-Juan;Liu, Jin-Xi;Nie, Guo-Quan;
10:3:179 Ferroelectric nanofibers with an embedded optically nonlinear benzothiazole derivative
DOI:10.1007/s11051-014-2502-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Baptista, Rosa M. F.;Isakov, Dmitry;Raposo, M. Manuela M.;Belsley, Michael;Bdikin, Igor;Kholkin, Andrei L.;Costa, Susana P. G.;Gomes, Etelvina de Matos;
10:3:180 Two dimensional woven nanogenerator
DOI:10.1016/j.nanoen.2013.01.001 JN:NANO ENERGY PY:2013
TC:13 AU: Bai, Suo;Zhang, Lu;Xu, Qi;Zheng, Youbin;Qin, Yong;Wang, Zhong Lin;
10:3:181 Multitasking in nanotechnology
DOI:10.1088/0957-4484/24/22/220201 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Demming, Anna;
10:3:182 Growth behavior and field emission property of ZnO nanowire arrays on Au and Ag films
DOI:10.1063/1.4824311 JN:AIP ADVANCES PY:2013
TC:2 AU: Kim, Sung Hyun;Lee, Churl Seung;Kim, Jeesun;Cho, Jin Woo;Kim, Young Keun;
10:3:183 Structure and electrical properties of Bi3.15Nd0.85Ti3O12 nanofibers synthesized by electrospinning and sol-gel method
DOI:10.1063/1.3276688 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Liao, M.;Zhong, X. L.;Wang, J. B.;Xie, S. H.;Zhou, Y. C.;
10:3:184 Morphology and electrical properties of high aspect ratio ZnO nanowires grown by hydrothermal method without repeated batch process
DOI:10.1063/1.4748289 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Cho, Jin Woo;Lee, Churl Seung;Lee, Kyoung Il;Kim, Seon Min;Kim, Sung Hyun;Kim, Young Keun;
10:3:185 Enhanced electromechanical properties of piezoelectric thin flexible films
DOI:10.1016/j.compscitech.2014.08.022 JN:COMPOSITES SCIENCE AND TECHNOLOGY PY:2014
TC:1 AU: Babu, Indu;de With, Gijsbertus;
10:3:186 Raman scattering, electronic, and ferroelectric properties of Nd modified Bi(4)Ti(3)O(12) nanotube arrays
DOI:10.1063/1.3407563 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Zhou, Di;Gu, Haoshuang;Hu, Yongming;Qian, Zheli;Hu, Zhenglong;Yang, Kun;Zou, Yanan;Wang, Zhao;Wang, Yu;Guan, Jianguo;Chen, Wanping;
10:3:187 Anti-plane electro-mechanical behavior of piezoelectric composites with a nano-fiber considering couple stress at the interfaces
DOI:10.1063/1.4817721 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Fang, Xue-Qian;Liu, Xiang-Lin;Liu, Jin-Xi;Nie, Guo-Quan;
10:3:188 Effective shear modulus of piezoelectric film embedded with square nano-fibers under anti-plane shear waves
DOI:10.1063/1.4871677 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Huang, Ming-Juan;Fang, Xue-Qian;Zhao, Xing;Liu, Jin-Xi;Feng, Wen-Jie;
10:3:189 Enhancing the piezopotential from Zinc oxide (ZnO) nanowire using p-type polymers
DOI:10.1016/j.matlet.2014.03.047 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Soomro, M. Y.;Nur, O.;Willander, M.;
10:3:190 Effect of hydroxyl group on global and local structures of hydrothermally grown KNbO3 nanorods
DOI:10.1016/j.matchemphys.2011.05.059 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Yun, B. K.;Koo, Y. S.;Jung, J. H.;Song, M.;Yoon, S.;
10:3:191 Fabrication of lead-free (Na0.82K0.18)(0.5)Bi0.5TiO3 piezoelectric nanofiber by electrospinning
DOI:10.1016/j.materresbull.2010.02.013 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:5 AU: Chen, Y. Q.;Zheng, X. J.;Feng, X.;Dai, S. H.;Zhang, D. Z.;
10:3:192 Structural and Raman properties of compositionally tunable AlxGa1-xN (0.66 <= x <= 1) nanowires
DOI:10.1016/j.mseb.2013.12.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Chen, Fei;Ji, Xiaohong;Lu, Zhenya;Shen, Yanhua;Zhang, Qinyuan;
10:3:193 Low frequency wideband nano generators for energy harvesting from natural environment
DOI:10.1016/j.nanoen.2014.02.009 JN:NANO ENERGY PY:2014
TC:2 AU: Song, Ming;Zhang, Yan;Peng, Mingzeng;Zhai, Junyi;
10:3:194 Piezoelectric touch-sensitive flexible hybrid energy harvesting nanoarchitectures
DOI:10.1088/0957-4484/21/40/405503 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Choi, Dukhyun;Lee, Keun Young;Lee, Kang Hyuck;Kim, Eok Su;Kim, Tae Sang;Lee, Sang Yoon;Kim, Sang-Woo;Choi, Jae-Young;Kim, Jong Min;
10:3:195 Enhanced sensitivity of piezoelectric pressure sensor with microstructured polydimethylsiloxane layer
DOI:10.1063/1.4869816 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Choi, Wook;Lee, Junwoo;Yoo, Yong Kyoung;Kang, Sungchul;Kim, Jinseok;Lee, Jeong Hoon;
10:3:196 Effect of drawing on the molecular orientation and polymorphism of melt-spun polyvinylidene fluoride fibers: Toward the development of piezoelectric force sensors
DOI:10.1002/app.39001 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:1 AU: Magniez, Kevin;Krajewski, Andrew;Neuenhofer, Martin;Helmer, Richard;
10:3:197 Performance Improvement of Piezoelectric-Rubber by Particle Formation of Linear Aggregates
DOI:10.1002/app.39862 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:1 AU: Mamada, Shogo;Yaguchi, Naoyuki;Hansaka, Masanori;Yamato, Masafumi;Yoshida, Hirohisa;
10:3:198 A self-powered AC magnetic sensor based on piezoelectric nanogenerator
DOI:10.1088/0957-4484/25/45/455503 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Yu, Aifang;Song, Ming;Zhang, Yan;Kou, Jinzong;Zhai, Junyi;Wang, Zhong Lin;
10:3:199 Thermally pressure-induced partial structural phase transitions in core-shell InSb-SiO2 nanoballs/microballs: characterization, size and interface effect
DOI:10.1088/0957-4484/25/39/395705 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Wu, Jyh Ming;Huang, Hsiao Jung;Lin, Ying Hong;
10:3:200 Structural dependence of the piezoelectric properties of KNbO3 nanowires synthesized by the hydrothermal method
DOI:10.1016/j.actamat.2013.03.002 JN:ACTA MATERIALIA PY:2013
TC:4 AU: Joung, Mi-Ri;Seo, In-Tae;Kim, Jin-Seong;Xu, HaiBo;Han, Guifang;Kang, Min-Gyu;Kang, Chong-Yun;Yoon, Seok-Jin;Nahm, Sahn;
10:3:201 A Hybrid Piezoelectric Structure for Wearable Nanogenerators (vol 24, pg 1759, 2012)
DOI:10.1002/adma.201290240 JN:ADVANCED MATERIALS PY:2012
TC:5 AU: Lee, Minbaek;Chen, Chih-Yen;Wang, Sihong;Cha, Seung Nam;Park, Young Jun;Kim, Jong Min;Chou, Li-Jen;Wang, Zhong Lin;
10:3:202 Synthesis and Structural Properties of Multi-walled Carbon Nanotube-Pb(Zr0.52Ti0.48)O-3 Composites
DOI:10.1080/00150193.2013.847335 JN:FERROELECTRICS PY:2013
TC:0 AU: Kwak, Jin Ho;Han, Jin Kyu;Bu, Sang Don;
10:3:203 Electromagnetic Micropores: Fabrication and Operation
DOI:10.1021/la103977e JN:LANGMUIR PY:2010
TC:4 AU: Basore, Joseph R.;Lavrik, Nickolay V.;Baker, Lane A.;
10:3:204 Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires
DOI:10.1021/acs.nanolett.5b01188 JN:NANO LETTERS PY:2015
TC:0 AU: Jeon, Dae-Young;Pregl, Sebastian;Park, So Jeong;Baraban, Larysa;Cuniberti, Gianaurelio;Mikolajick, Thomas;Weber, Walter M.;
10:3:205 Top-Down Fabrication of Ordered Mesoscopic PZT Dot Arrays by Natural Lithography
DOI:10.1080/10584587.2011.570639 JN:INTEGRATED FERROELECTRICS PY:2011
TC:3 AU: Waegner, M.;Suchaneck, G.;Gerlach, G.;
10:3:206 A Review on Synthesis and Characterization of Lead Zirconate Titanate Nanofibers through Electrospinning
DOI:10.1080/10584587.2011.574988 JN:INTEGRATED FERROELECTRICS PY:2011
TC:4 AU: Wang, Yu;Santiago-Aviles, Jorge J.;
10:3:207 P-doped ZnO Nanoparticals Synthesized by Thermal Decomposition
DOI:10.1080/10584587.2012.687324 JN:INTEGRATED FERROELECTRICS PY:2012
TC:0 AU: Fang, Xuan;Wang, Xiaohua;Pu, Shuangshuang;Li, Jinhua;Wei, Zhipeng;Fang, Fang;Li, Shuang;Wang, Fei;Zhao, Dongxu;
10:3:208 Influence of Ammonia on Properties of Nanocrystalline Barium Titanate Particles Prepared by a Hydrothermal Method
DOI:10.1111/j.1551-2916.2012.05163.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:4 AU: Moon, San;Lee, Hyun-Wook;Choi, Chang-Hak;Kim, Do Kyung;
10:3:209 Domain engineered ferroelectric energy harvesters on a substrate
DOI:10.1063/1.3592172 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Muench, I.;Krauss, M.;Landis, C. M.;Huber, J. E.;
10:3:210 Voltage generation of piezoelectric cantilevers by laser heating
DOI:10.1063/1.4766412 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Hsieh, Chun-Yi;Liu, Wei-Hung;Chen, Yang-Fang;Shih, Wan Y.;Gao, Xiaotong;Shih, Wei-Heng;
10:3:211 Fast and continuous patterning on the surface of plastic fiber by using thermal roller imprint
DOI:10.1116/1.4754810 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Ohtomo, Akihiro;Kokubo, Mitsunori;Goto, Hiroshi;Mekaru, Harutaka;Takagi, Hideki;
10:3:212 Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response
DOI:10.1088/0957-4484/21/33/335601 JN:NANOTECHNOLOGY PY:2010
TC:1 AU: Herderick, Edward D.;Polomoff, Nicholas A.;Huey, Bryan D.;Padture, Nitin P.;
10:3:213 Influence of N-doped TiO2 on lithium ion conductivity of porous polymeric electrolyte membrane containing LiClO4
DOI:10.1016/j.ssi.2012.02.024 JN:SOLID STATE IONICS PY:2012
TC:8 AU: Kim, Ki-Seok;Park, Soo-Jin;
10:4:1 Flexible triboelectric generator!
DOI:10.1016/j.nanoen.2012.01.004 JN:NANO ENERGY PY:2012
TC:266 AU: Fan, Feng-Ru;Tian, Zhong-Qun;Wang, Zhong Lin;
10:4:2 Nanoscale Triboelectric-Effect-Enabled Energy Conversion for Sustainably Powering Portable Electronics
DOI:10.1021/nl303573d JN:NANO LETTERS PY:2012
TC:157 AU: Wang, Sihong;Lin, Long;Wang, Zhong Lin;
10:4:3 Transparent Triboelectric Nanogenerators and Self-Powered Pressure Sensors Based on Micropatterned Plastic Films
DOI:10.1021/nl300988z JN:NANO LETTERS PY:2012
TC:170 AU: Fan, Feng-Ru;Lin, Long;Zhu, Guang;Wu, Wenzhuo;Zhang, Rui;Wang, Zhong Lin;
10:4:4 Triboelectric-Generator-Driven Pulse Electrodeposition for Micropatterning
DOI:10.1021/nl302560k JN:NANO LETTERS PY:2012
TC:131 AU: Zhu, Guang;Pan, Caofeng;Guo, Wenxi;Chen, Chih-Yen;Zhou, Yusheng;Yu, Ruomeng;Wang, Zhong Lin;
10:4:5 Toward Large-Scale Energy Harvesting by a Nanoparticle-Enhanced Triboelectric Nanogenerator
DOI:10.1021/nl4001053 JN:NANO LETTERS PY:2013
TC:136 AU: Zhu, Guang;Lin, Zong-Hong;Jing, Qingshen;Bai, Peng;Pan, Caofeng;Yang, Ya;Zhou, Yusheng;Wang, Zhong Lin;
10:4:6 Segmentally Structured Disk Triboelectric Nanogenerator for Harvesting Rotational Mechanical Energy
DOI:10.1021/nl4013002 JN:NANO LETTERS PY:2013
TC:86 AU: Lin, Long;Wang, Sihong;Xie, Yannan;Jing, Qingshen;Niu, Simiao;Hu, Youfan;Wang, Zhong Lin;
10:4:7 Sliding-Triboelectric Nanogenerators Based on In-Plane Charge-Separation Mechanism
DOI:10.1021/nl400738p JN:NANO LETTERS PY:2013
TC:83 AU: Wang, Sihong;Lin, Long;Xie, Yannan;Jing, Qingshen;Niu, Simiao;Wang, Zhong Lin;
10:4:8 Linear-Grating Triboelectric Generator Based on Sliding Electrification
DOI:10.1021/nl4008985 JN:NANO LETTERS PY:2013
TC:82 AU: Zhu, Guang;Chen, Jun;Liu, Ying;Bai, Peng;Zhou, Yu Sheng;Jing, Qingshen;Pan, Caofeng;Wang, Zhong Lin;
10:4:9 Triboelectric Nanogenerators as New Energy Technology for Self-Powered Systems and as Active Mechanical and Chemical Sensors
DOI:10.1021/nn404614z JN:ACS NANO PY:2013
TC:113 AU: Wang, Zhong Lin;
10:4:10 Frequency-Multiplication High-Output Triboelectric Nanogenerator for Sustainably Powering Biomedical Microsystems
DOI:10.1021/nl3045684 JN:NANO LETTERS PY:2013
TC:90 AU: Zhang, Xiao-Sheng;Han, Meng-Di;Wang, Ren-Xin;Zhu, Fu-Yun;Li, Zhi-Hong;Wang, Wei;Zhang, Hai-Xia;
10:4:11 Topographically-Designed Triboelectric Nanogenerator via Block Copolymer Self-Assembly
DOI:10.1021/nl503402c JN:NANO LETTERS PY:2014
TC:13 AU: Jeong, Chang Kyu;Baek, Kwang Min;Niu, Simiao;Nam, Tae Won;Hur, Yoon Hyung;Park, Dae Yong;Hwang, Geon-Tae;Byun, Myunghwan;Wang, Zhong Lin;Jung, Yeon Sik;Lee, Keon Jae;
10:4:12 Integrated Multi layered Triboelectric Nanogenerator for Harvesting Biomechanical Energy from Human Motions
DOI:10.1021/nn4007708 JN:ACS NANO PY:2013
TC:78 AU: Bai, Peng;Zhu, Guang;Lin, Zong-Hong;Jing, Qingshen;Chen, Jun;Zhang, Gong;Ma, Jusheng;Wang, Zhong Lin;
10:4:13 Stretchable Energy-Harvesting Tactile Electronic Skin Capable of Differentiating Multiple Mechanical Stimuli Modes
DOI:10.1002/adma.201402574 JN:ADVANCED MATERIALS PY:2014
TC:12 AU: Park, Steve;Kim, Hyunjin;Vosgueritchian, Michael;Cheon, Sangmo;Kim, Hyeok;Koo, Ja Hoon;Kim, Taeho Roy;Lee, Sanghyo;Schwartz, Gregory;Chang, Hyuk;Bao, Zhenan;
10:4:14 Self-Powered Magnetic Sensor Based on a Triboelectric Nanogenerator
DOI:10.1021/nn304374m JN:ACS NANO PY:2012
TC:46 AU: Yang, Ya;Lin, Long;Zhang, Yue;Jing, Qingshen;Hou, Te-Chien;Wang, Zhong Lin;
10:4:15 Single-Electrode-Based Sliding Triboelectric Nanogenerator for Self-Powered Displacement Vector Sensor System
DOI:10.1021/nn403021m JN:ACS NANO PY:2013
TC:59 AU: Yang, Ya;Zhang, Hulin;Chen, Jun;Jing, Qingshen;Zhou, Yu Sheng;Wen, Xiaonan;Wang, Zhong Lin;
10:4:16 Enhanced Triboelectric Nanogenerators and Triboelectric Nanosensor Using Chemically Modified TiO2 Nanomaterials
DOI:10.1021/nn401256w JN:ACS NANO PY:2013
TC:39 AU: Lin, Zong-Hong;Xie, Yannan;Yang, Ya;Wang, Sihong;Zhu, Guang;Wang, Zhong Lin;
10:4:17 Harmonic-Resonator-Based Triboelectric Nanogenerator as a Sustainable Power Source and a Self-Powered Active Vibration Sensor
DOI:10.1002/adma.201302397 JN:ADVANCED MATERIALS PY:2013
TC:60 AU: Chen, Jun;Zhu, Guang;Yang, Weiqing;Jing, Qingshen;Bai, Peng;Yang, Ya;Hou, Te-Chien;Wang, Zhong Lin;
10:4:18 Cylindrical Rotating Triboelectric Nanogenerator
DOI:10.1021/nn402491y JN:ACS NANO PY:2013
TC:43 AU: Bai, Peng;Zhu, Guang;Liu, Ying;Chen, Jun;Jing, Qingshen;Yang, Weiqing;Ma, Jusheng;Zhang, Gong;Wang, Zhong Lin;
10:4:19 Theory of Sliding-Mode Triboelectric Nanogenerators
DOI:10.1002/adma.201302808 JN:ADVANCED MATERIALS PY:2013
TC:48 AU: Niu, Simiao;Liu, Ying;Wang, Sihong;Lin, Long;Zhou, Yu Sheng;Hu, Youfan;Wang, Zhong Lin;
10:4:20 Flexible interdigital-electrodes-based triboelectric generators for harvesting sliding and rotating mechanical energy
DOI:10.1039/c4ta04137b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:7 AU: Leng, Qiang;Guo, Hengyu;He, Xianming;Liu, Guanlin;Kang, Yue;Hu, Chenguo;Xi, Yi;
10:4:21 Hybrid Energy Cell for Degradation of Methyl Orange by Self-Powered Electrocatalytic Oxidation
DOI:10.1021/nl3046188 JN:NANO LETTERS PY:2013
TC:26 AU: Yang, Ya;Zhang, Hulin;Lee, Sangmin;Kim, Dongseob;Hwang, Woonbong;Wang, Zhong Lin;
10:4:22 Triboelectric Active Sensor Array for Self-Powered Static and Dynamic Pressure Detection and Tactile Imaging
DOI:10.1021/nn4037514 JN:ACS NANO PY:2013
TC:46 AU: Lin, Long;Xie, Yannan;Wang, Sihong;Wu, Wenzhuo;Niu, Simiao;Wen, Xiaonan;Wang, Zhong Lin;
10:4:23 Increase Output Energy and Operation Frequency of a Triboelectric Nanogenerator by Two Grounded Electrodes Approach
DOI:10.1002/adfm.201303659 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:10 AU: Cheng, Gang;Lin, Zong-Hong;Du, Zuliang;Wang, Zhong Lin;
10:4:24 A Single-Electrode Based Triboelectric Nanogenerator as Self-Powered Tracking System
DOI:10.1002/adma.201302453 JN:ADVANCED MATERIALS PY:2013
TC:31 AU: Yang, Ya;Zhou, Yu Sheng;Zhang, Hulin;Liu, Ying;Lee, Sangmin;Wang, Zhong Lin;
10:4:25 Theoretical Comparison, Equivalent Transformation, and Conjunction Operations of Electromagnetic Induction Generator and Triboelectric Nanogenerator for Harvesting Mechanical Energy
DOI:10.1002/adma.201400207 JN:ADVANCED MATERIALS PY:2014
TC:26 AU: Zhang, Chi;Tang, Wei;Han, Changbao;Fan, Fengru;Wang, Zhong Lin;
10:4:26 Freestanding Triboelectric-Layer-Based Nanogenerators for Harvesting Energy from a Moving Object or Human Motion in Contact and Non-contact Modes
DOI:10.1002/adma.201305303 JN:ADVANCED MATERIALS PY:2014
TC:40 AU: Wang, Sihong;Xie, Yannan;Niu, Simiao;Lin, Long;Wang, Zhong Lin;
10:4:27 Harvesting Energy from the Natural Vibration of Human Walking
DOI:10.1021/nn405175z JN:ACS NANO PY:2013
TC:40 AU: Yang, Weiqing;Chen, Jun;Zhu, Guang;Yang, Jin;Bai, Peng;Su, Yuanjie;Jing, Qingsheng;Cao, Xia;Wang, Zhong Lin;
10:4:28 Simultaneously Harvesting Electrostatic and Mechanical Energies from Flowing Water by a Hybridized Triboelectric Nanogenerator
DOI:10.1021/nn406565k JN:ACS NANO PY:2014
TC:16 AU: Cheng, Gang;Lin, Zong-Hong;Du, Zu-liang;Wang, Zhong Lin;
10:4:29 Self-Powered Trajectory, Velocity, and Acceleration Tracking of a Moving Object/Body using a Triboelectric Sensor
DOI:10.1002/adfm.201402703 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:5 AU: Yi, Fang;Lin, Long;Niu, Simiao;Yang, Jin;Wu, Wenzhuo;Wang, Sihong;Liao, Qingliang;Zhang, Yue;Wang, Zhong Lin;
10:4:30 Hydrophobic Sponge Structure-Based Triboelectric Nanogenerator
DOI:10.1002/adma.201401184 JN:ADVANCED MATERIALS PY:2014
TC:13 AU: Lee, Keun Young;Chun, Jinsung;Lee, Ju-Hyuck;Kim, Kyeong Nam;Kang, Na-Ri;Kim, Ju-Young;Kim, Myung Hwa;Shin, Kyung-Sik;Gupta, Manoj Kumar;Baik, Jeong Min;Kim, Sang-Woo;
10:4:31 Finger typing driven triboelectric nanogenerator and its use for instantaneously lighting up LEDs
DOI:10.1016/j.nanoen.2012.11.015 JN:NANO ENERGY PY:2013
TC:39 AU: Zhong, Junwen;Zhong, Qize;Fan, Fengru;Zhang, Yan;Wang, Sihong;Hu, Bin;Wang, Zhong Lin;Zhou, Jun;
10:4:32 Silicon-Based Hybrid Energy Cell for Self-Powered Electrodegradation and Personal Electronics
DOI:10.1021/nn400361p JN:ACS NANO PY:2013
TC:27 AU: Yang, Ya;Zhang, Hulin;Liu, Yan;Lin, Zong-Hong;Lee, Sangmin;Lin, Ziyin;Wong, Ching Ping;Wang, Zhong Lin;
10:4:33 Pulsed Nanogenerator with Huge Instantaneous Output Power Density
DOI:10.1021/nn403151t JN:ACS NANO PY:2013
TC:21 AU: Cheng, Gang;Lin, Zong-Hong;Lin, Long;Du, Zu-liang;Wang, Zhong Lin;
10:4:34 Rotating-Disk-Based Direct-Current Triboelectric Nanogenerator
DOI:10.1002/aenm.201301798 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:10 AU: Zhang, Chi;Zhou, Tao;Tang, Wei;Han, Changbao;Zhang, Limin;Wang, Zhong Lin;
10:4:35 Hybrid triboelectric nanogenerator for harvesting water wave energy and as a self-powered distress signal emitter
DOI:10.1016/j.nanoen.2014.07.006 JN:NANO ENERGY PY:2014
TC:16 AU: Su, Yuanjie;Wen, Xiaonan;Zhu, Guang;Yang, Jin;Chen, Jun;Bai, Peng;Wu, Zhiming;Jiang, Yadong;Wang, Zhong Lin;
10:4:36 r-Shaped Hybrid Nanogenerator with Enhanced Piezoelectricity
DOI:10.1021/nn404023v JN:ACS NANO PY:2013
TC:24 AU: Han, Mengdi;Zhang, Xiao-Sheng;Meng, Bo;Liu, Wen;Tang, Wei;Sun, Xuming;Wang, Wei;Zhang, Haixia;
10:4:37 Human Skin Based Triboelectric Nanogenerators for Harvesting Biomechanical Energy and as Self-Powered Active Tactile Sensor System
DOI:10.1021/nn403838y JN:ACS NANO PY:2013
TC:43 AU: Yang, Ya;Zhang, Hulin;Lin, Zong-Hong;Zhou, Yu Sheng;Jing, Qingshen;Su, Yuanjie;Yang, Jin;Chen, Jun;Hu, Chenguo;Wang, Zhong Lin;
10:4:38 Triboelectric Nanogenerator for Harvesting Wind Energy and as Self-Powered Wind Vector Sensor System
DOI:10.1021/nn4043157 JN:ACS NANO PY:2013
TC:41 AU: Yang, Ya;Zhu, Guang;Zhang, Hulin;Chen, Jun;Zhong, Xiandai;Lin, Zong-Hong;Su, Yuanjie;Bai, Peng;Wen, Xiaonan;Wang, Zhong Lin;
10:4:39 Quantitative Measurements of Vibration Amplitude Using a Contact-Mode Freestanding Triboelectric Nanogenerator
DOI:10.1021/nn5054365 JN:ACS NANO PY:2014
TC:8 AU: Wang, Sihong;Niu, Simiao;Yang, Jin;Lin, Long;Wang, Zhong Lin;
10:4:40 Transparent Flexible Graphene Triboelectric Nanogenerators
DOI:10.1002/adma.201400172 JN:ADVANCED MATERIALS PY:2014
TC:21 AU: Kim, Seongsu;Gupta, Manoj Kumar;Lee, Keun Young;Sohn, Ahrum;Kim, Tae Yun;Shin, Kyung-Sik;Kim, Dohwan;Kim, Sung Kyun;Lee, Kang Hyuck;Shin, Hyeon-Jin;Kim, Dong-Wook;Kim, Sang-Woo;
10:4:41 Noncontact Free-Rotating Disk Triboelectric Nanogenerator as a Sustainable Energy Harvester and Self-Powered Mechanical Sensor
DOI:10.1021/am405637s JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:22 AU: Lin, Long;Wang, Sihong;Niu, Simiao;Liu, Chang;Xie, Yannan;Wang, Zhong Lin;
10:4:42 High-performance triboelectric nanogenerator with enhanced energy density based on single-step fluorocarbon plasma treatment
DOI:10.1016/j.nanoen.2013.12.016 JN:NANO ENERGY PY:2014
TC:15 AU: Zhang, Xiao-Sheng;Han, Meng-Di;Wang, Ren-Xin;Meng, Bo;Zhu, Fu-Yun;Sun, Xu-Ming;Hu, Wei;Wang, Wei;Li, Zhi-Hong;Zhang, Hai-Xia;
10:4:43 Triboelectric Nanogenerator Built on Suspended 3D Spiral Structure as Vibration and Positioning Sensor and Wave Energy Harvester
DOI:10.1021/nn405209u JN:ACS NANO PY:2013
TC:29 AU: Hu, Youfan;Yang, Jin;Jing, Qingshen;Niu, Simiao;Wu, Wenzhuo;Wang, Zhong Lin;
10:4:44 Rotary Triboelectric Nanogenerator Based on a Hybridized Mechanism for Harvesting Wind Energy
DOI:10.1021/nn402477h JN:ACS NANO PY:2013
TC:41 AU: Xie, Yannan;Wang, Sihong;Lin, Long;Jing, Qingshen;Lin, Zong-Hong;Niu, Simiao;Wu, Zhengyun;Wang, Zhong Lin;
10:4:45 Triboelectric Sensor for Self-Powered Tracking of Object Motion inside Tubing
DOI:10.1021/nn500695q JN:ACS NANO PY:2014
TC:22 AU: Su, Yuanjie;Zhu, Guang;Yang, Weiqing;Yang, Jin;Chen, Jun;Jing, Qingshen;Wu, Zhiming;Jiang, Yadong;Wang, Zhong Lin;
10:4:46 Dual-Mode Triboelectric Nanogenerator for Harvesting Water Energy and as a Self-Powered Ethanol Nanosensor
DOI:10.1021/nn501983s JN:ACS NANO PY:2014
TC:18 AU: Lin, Zong-Hong;Cheng, Gang;Wu, Wenzhuo;Pradel, Ken C.;Wang, Zhong Lin;
10:4:47 Motion Charged Battery as Sustainable Flexible-Power-Unit
DOI:10.1021/nn4050408 JN:ACS NANO PY:2013
TC:19 AU: Wang, Sihong;Lin, Zong-Hong;Niu, Simiao;Lin, Long;Xie, Yannan;Pradel, Ken C.;Wang, Zhong Lin;
10:4:48 Triboelectric Nanogenerator as an Active UV Photodetector
DOI:10.1002/adfm.201302838 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:15 AU: Lin, Zong-Hong;Cheng, Gang;Yang, Ya;Zhou, Yu Sheng;Lee, Sangmin;Wang, Zhong Lin;
10:4:49 Woven Structured Triboelectric Nanogenerator for Wearable Devices
DOI:10.1021/am504110u JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:14 AU: Zhou, Tao;Zhang, Chi;Han, Chang Bao;Fan, Feng Ru;Tang, Wei;Wang, Zhong Lin;
10:4:50 Self-powered flexible printed circuit board with integrated triboelectric generator
DOI:10.1016/j.nanoen.2013.08.006 JN:NANO ENERGY PY:2013
TC:16 AU: Meng, Bo;Tang, Wei;Zhang, Xiaosheng;Han, Mengdi;Liu, Wen;Zhang, Haixia;
10:4:51 In Situ Quantitative Study of Nanoscale Triboelectrification and Patterning
DOI:10.1021/nl401006x JN:NANO LETTERS PY:2013
TC:26 AU: Zhou, Yu Sheng;Liu, Ying;Zhu, Guang;Lin, Zong-Hong;Pan, Caofeng;Jing, Qingshen;Wang, Zhong Lin;
10:4:52 Nature-Replicated Nano-in-Micro Structures for Triboelectric Energy Harvesting
DOI:10.1002/smll.201400863 JN:SMALL PY:2014
TC:4 AU: Seol, Myeong-Lok;Woo, Jong-Ho;Lee, Dong-Il;Im, Hwon;Hur, Jae;Choi, Yang-Kyu;
10:4:53 Broadband Vibrational Energy Harvesting Based on a Triboelectric Nanogenerator
DOI:10.1002/aenm.201301322 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:21 AU: Yang, Jin;Chen, Jun;Yang, Ya;Zhang, Hulin;Yang, Weiqing;Bai, Peng;Su, Yuanjie;Wang, Zhong Lin;
10:4:54 Triboelectric Nanogenerator for Harvesting Vibration Energy in Full Space and as Self- Powered Acceleration Sensor
DOI:10.1002/adfm.201302453 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:29 AU: Zhang, Hulin;Yang, Ya;Su, Yuanjie;Chen, Jun;Adams, Katherine;Lee, Sangmin;Hu, Chenguo;Wang, Zhong Lin;
10:4:55 In Vivo Powering of Pacemaker by Breathing-Driven Implanted Triboelectric Nanogenerator
DOI:10.1002/adma.201402064 JN:ADVANCED MATERIALS PY:2014
TC:11 AU: Zheng, Qiang;Shi, Bojing;Fan, Fengru;Wang, Xinxin;Yan, Ling;Yuan, Weiwei;Wang, Sihong;Liu, Hong;Li, Zhou;Wang, Zhong Lin;
10:4:56 Triboelectrification Based Motion Sensor for Human-Machine Interfacing
DOI:10.1021/am500864t JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:15 AU: Yang, Weiqing;Chen, Jun;Wen, Xiaonan;Jing, Qingshen;Yang, Jin;Su, Yuanjie;Zhu, Guang;Wu, Wenzuo;Wang, Zhong Lin;
10:4:57 PDMS-based Triboelectric and Transparent Nanogenerators with ZnO Nanorod Arrays
DOI:10.1021/am5018072 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Ko, Yeong Hwan;Nagaraju, Goli;Lee, Soo Hyun;Yu, Jae Su;
10:4:58 Investigation of power generation based on stacked triboelectric nanogenerator
DOI:10.1016/j.nanoen.2013.04.009 JN:NANO ENERGY PY:2013
TC:26 AU: Tang, W.;Meng, B.;Zhang, H. X.;
10:4:59 Self-powered triboelectric velocity sensor for dual-mode sensing of rectified linear and rotary motions
DOI:10.1016/j.nanoen.2014.09.018 JN:NANO ENERGY PY:2014
TC:7 AU: Jing, Qingshen;Zhu, Guang;Wu, Wenzhuo;Bai, Peng;Xie, Yannan;Han, Ray P. S.;Wang, Zhong Lin;
10:4:60 3D Fiber-Based Hybrid Nanogenerator for Energy Harvesting and as a Self-Powered Pressure Sensor
DOI:10.1021/nn504243j JN:ACS NANO PY:2014
TC:3 AU: Li, Xiuhan;Lin, Zong-Hong;Cheng, Gang;Wen, Xiaonan;Liu, Ying;Niu, Simiao;Wang, Zhong Lin;
10:4:61 Triboelectrification-Based Organic Film Nanogenerator for Acoustic Energy Harvesting and Self-Powered Active Acoustic Sensing
DOI:10.1021/nn4063616 JN:ACS NANO PY:2014
TC:37 AU: Yang, Jin;Chen, Jun;Liu, Ying;Yang, Weiqing;Su, Yuanjie;Wang, Zhong Lin;
10:4:62 Triboelectric Nanogenerators as a Self-Powered Motion Tracking System
DOI:10.1002/adfm.201400431 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:6 AU: Chen, Mengxiao;Li, Xiaoyi;Lin, Long;Du, Weiming;Han, Xun;Zhu, Jing;Pan, Caofeng;Wang, Zhong Lin;
10:4:63 Theoretical Investigation and Structural Optimization of Single-Electrode Triboelectric Nanogenerators
DOI:10.1002/adfm.201303799 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:23 AU: Niu, Simiao;Liu, Ying;Wang, Sihong;Lin, Long;Zhou, Yu Sheng;Hu, Youfan;Wang, Zhong Lin;
10:4:64 Grating-Structured Freestanding Triboelectric-Layer Nanogenerator for Harvesting Mechanical Energy at 85% Total Conversion Efficiency
DOI:10.1002/adma.201402428 JN:ADVANCED MATERIALS PY:2014
TC:16 AU: Xie, Yannan;Wang, Sihong;Niu, Simiao;Lin, Long;Jing, Qingshen;Yang, Jin;Wu, Zhengyun;Wang, Zhong Lin;
10:4:65 A nanogenerator for harvesting airflow energy and light energy
DOI:10.1039/c3ta14421f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:22 AU: Guo, Hengyu;He, Xianming;Zhong, Junwen;Zhong, Qize;Leng, Qiang;Hu, Chenguo;Chen, Jie;Tian, Li;Xi, Yi;Zhou, Jun;
10:4:66 Single-friction-surface triboelectric generator with human body conduit
DOI:10.1063/1.4868130 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Meng, Bo;Cheng, Xiaoliang;Zhang, Xiaosheng;Han, Mengdi;Liu, Wen;Zhang, Haixia;
10:4:67 Highly transparent and flexible triboelectric nanogenerators: performance improvements and fundamental mechanisms
DOI:10.1039/c4ta02747g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:10 AU: Fan, Feng Ru;Luo, Jianjun;Tang, Wei;Li, Chaoyu;Zhang, Cuiping;Tian, Zhongqun;Wang, Zhong Lin;
10:4:68 Triboelectric nanogenerator built inside shoe insole for harvesting walking energy
DOI:10.1016/j.nanoen.2013.03.001 JN:NANO ENERGY PY:2013
TC:29 AU: Hou, Te-Chien;Yang, Ya;Zhang, Hulin;Chen, Jun;Chen, Lih-Juann;Wang, Zhong Lin;
10:4:69 Triboelectric nanogenerator built inside clothes for self-powered glucose biosensors
DOI:10.1016/j.nanoen.2013.03.024 JN:NANO ENERGY PY:2013
TC:24 AU: Zhang, Hulin;Yang, Ya;Hou, Te-Chien;Su, Yuanjie;Hu, Chenguo;Wang, Zhong Lin;
10:4:70 Self-powered velocity and trajectory tracking sensor array made of planar triboelectric nanogenerator pixels
DOI:10.1016/j.nanoen.2014.07.025 JN:NANO ENERGY PY:2014
TC:7 AU: Han, Chang Bao;Zhang, Chi;Li, Xiao Hui;Zhang, Limin;Zhou, Tao;Hu, Weiguo;Wang, Zhong Lin;
10:4:71 An unmovable single-layer triboloelectric generator driven by sliding friction
DOI:10.1016/j.nanoen.2014.06.031 JN:NANO ENERGY PY:2014
TC:3 AU: Liu, Wen;Han, Mengdi;Sun, Xuming;Meng, Bo;Zhang, Xiao-Sheng;Zhang, Haixia;
10:4:72 Single-Electrode-Based Rotating Triboelectric Nanogenerator for Harvesting Energy from Tires
DOI:10.1021/nn4053292 JN:ACS NANO PY:2014
TC:6 AU: Zhang, Hulin;Yang, Ya;Zhong, Xiandai;Su, Yuanjie;Zhou, Yusheng;Hu, Chenguo;Wang, Zhong Lin;
10:4:73 Hybridizing Triboelectrification and Electromagnetic Induction Effects for High-Efficient Mechanical Energy Harvesting
DOI:10.1021/nn502684f JN:ACS NANO PY:2014
TC:11 AU: Hu, Youfan;Yang, Jin;Niu, Simiao;Wu, Wenzhuo;Wang, Zhong Lin;
10:4:74 Fiber-Based Generator for Wearable Electronics and Mobile Medication
DOI:10.1021/nn501732z JN:ACS NANO PY:2014
TC:37 AU: Zhong, Junwen;Zhang, Yan;Zhong, Qize;Hu, Qiyi;Hu, Bin;Wang, Zhong Lin;Zhou, Jun;
10:4:75 Maximum Surface Charge Density for Triboelectric Nanogenerators Achieved by Ionized-Air Injection: Methodology and Theoretical Understanding
DOI:10.1002/adma.201402491 JN:ADVANCED MATERIALS PY:2014
TC:9 AU: Wang, Sihong;Xie, Yannan;Niu, Simiao;Lin, Long;Liu, Chang;Zhou, Yu Sheng;Wang, Zhong Lin;
10:4:76 Fabric-Based Integrated Energy Devices for Wearable Activity Monitors
DOI:10.1002/adma.201402439 JN:ADVANCED MATERIALS PY:2014
TC:14 AU: Jung, Sungmook;Lee, Jongsu;Hyeon, Taeghwan;Lee, Minbaek;Kim, Dae-Hyeong;
10:4:77 Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy
DOI:10.1021/am501782f JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:9 AU: Meng, Xian Song;Zhu, Guang;Wang, Zhong Lin;
10:4:78 Triboelectric nanogenerator for harvesting pendulum oscillation energy
DOI:10.1016/j.nanoen.2013.08.007 JN:NANO ENERGY PY:2013
TC:10 AU: Lee, Sangmin;Lee, Yean;Kim, Dongseob;Yang, Ya;Lin, Long;Lin, Zong-Hong;Hwang, Woonbong;Wang, Zhong Lin;
10:4:79 Multi-layered disk triboelectric nanogenerator for harvesting hydropower
DOI:10.1016/j.nanoen.2014.03.015 JN:NANO ENERGY PY:2014
TC:14 AU: Xie, Yannan;Wang, Sihong;Niu, Simiao;Lin, Long;Jing, Qingshen;Su, Yuanjie;Wu, Zhengyun;Wang, Zhong Lin;
10:4:80 Enhanced photodegradation of methyl orange with TiO2 nanoparticles using a triboelectric nanogenerator
DOI:10.1088/0957-4484/24/29/295401 JN:NANOTECHNOLOGY PY:2013
TC:19 AU: Su, Yuanjie;Yang, Ya;Zhang, Hulin;Xie, Yannan;Wu, Zhiming;Jiang, Yadong;Fukata, Naoki;Bando, Yoshio;Wang, Zhong Lin;
10:4:81 Complementary power output characteristics of electromagnetic generators and triboelectric generators
DOI:10.1088/0957-4484/25/13/135402 JN:NANOTECHNOLOGY PY:2014
TC:8 AU: Fan, Feng-Ru;Tang, Wei;Yao, Yan;Luo, Jianjun;Zhang, Chi;Wang, Zhong Lin;
10:4:82 Airflow-Induced Triboelectric Nanogenerator as a Self-Powered Sensor for Detecting Humidity and Airflow Rate
DOI:10.1021/am504919w JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:11 AU: Guo, Hengyu;Chen, Jie;Tian, Li;Leng, Qiang;Xi, Yi;Hu, Chenguo;
10:4:83 Contact De-electrification of Electrostatically Charged Polymers
DOI:10.1021/ja309268n JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:14 AU: Soh, Siowling;Kwok, Sen Wai;Liu, Helena;Whitesides, George M.;
10:4:84 Triboelectric nanogenerator as self-powered active sensors for detecting liquid/gaseous water/ethanol
DOI:10.1016/j.nanoen.2013.08.004 JN:NANO ENERGY PY:2013
TC:29 AU: Zhang, Hulin;Yang, Ya;Su, Yuanjie;Chen, Jun;Hu, Chenguo;Wu, Zhenkun;Liu, Yan;Wong, Ching Ping;Bando, Yoshio;Wang, Zhong Lin;
10:4:85 Cover-sheet-based nanogenerator for charging mobile electronics using low-frequency body motion/vibration
DOI:10.1016/j.nanoen.2014.07.005 JN:NANO ENERGY PY:2014
TC:12 AU: Tang, Wei;Han, Chang Bao;Zhang, Chi;Wang, Zhong Lin;
10:4:86 Manipulating Nanoscale Contact Electrification by an Applied Electric Field
DOI:10.1021/nl404819w JN:NANO LETTERS PY:2014
TC:5 AU: Zhou, Yu Sheng;Wang, Sihong;Yang, Ya;Zhu, Guang;Niu, Simiao;Lin, Zong-Hong;Liu, Ying;Wang, Zhong Lin;
10:4:87 Case-Encapsulated Triboelectric Nanogenerator for Harvesting Energy from Reciprocating Sliding Motion
DOI:10.1021/nn500694y JN:ACS NANO PY:2014
TC:17 AU: Jing, Qingshen;Zhu, Guang;Bai, Peng;Xie, Yannan;Chen, Jun;Han, Ray P. S.;Wang, Zhong Lin;
10:4:88 Harvesting Broadband Kinetic Impact Energy from Mechanical Triggering/Vibration and Water Waves
DOI:10.1021/nn502618f JN:ACS NANO PY:2014
TC:15 AU: Wen, Xiaonan;Yang, Weiqing;Jing, Qingshen;Wang, Zhong Lin;
10:4:89 Fully Enclosed Triboelectric Nanogenerators for Applications in Water and Harsh Environments
DOI:10.1002/aenm.201300376 JN:ADVANCED ENERGY MATERIALS PY:2013
TC:12 AU: Yang, Ya;Zhang, Hulin;Liu, Ruoyu;Wen, Xiaonan;Hou, Te-Chien;Wang, Zhong Lin;
10:4:90 Direct-Current Triboelectric Generator
DOI:10.1002/adfm.201304295 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:2 AU: Yang, Ya;Zhang, Hulin;Wang, Zhong Lin;
10:4:91 Effect of humidity and pressure on the triboelectric nanogenerator
DOI:10.1016/j.nanoen.2013.07.012 JN:NANO ENERGY PY:2013
TC:13 AU: Vu Nguyen;Yang, Rusen;
10:4:92 Silicon-based hybrid cell for harvesting solar energy and raindrop electrostatic energy
DOI:10.1016/j.nanoen.2014.07.024 JN:NANO ENERGY PY:2014
TC:11 AU: Zheng, Li;Lin, Zong-Hong;Cheng, Gang;Wu, Wenzhuo;Wen, Xiaonan;Lee, Sangmin;Wang, Zhong Lin;
10:4:93 A Three Dimensional Multi-Layered Sliding Triboelectric Nanogenerator
DOI:10.1002/aenm.201301592 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:4 AU: Du, Weiming;Han, Xun;Lin, Long;Chen, Mengxiao;Li, Xiaoyi;Pan, Caofeng;Wang, Zhong Lin;
10:4:94 3D Stack Integrated Triboelectric Nanogenerator for Harvesting Vibration Energy
DOI:10.1002/adfm.201304211 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:19 AU: Yang, Weiqing;Chen, Jun;Jing, Qingshen;Yang, Jin;Wen, Xiaonan;Su, Yuanjie;Zhu, Guang;Bai, Peng;Wang, Zhong Lin;
10:4:95 A Shape-Adaptive Thin-Film-Based Approach for 50% High-Efficiency Energy Generation Through Micro-Grating Sliding Electrification
DOI:10.1002/adma.201400021 JN:ADVANCED MATERIALS PY:2014
TC:29 AU: Zhu, Guang;Zhou, Yu Sheng;Bai, Peng;Meng, Xian Song;Jing, Qingshen;Chen, Jun;Wang, Zhong Lin;
10:4:96 Nanometer Resolution Self-Powered Static and Dynamic Motion Sensor Based on Micro-Grated Triboelectrification
DOI:10.1002/adma.201304619 JN:ADVANCED MATERIALS PY:2014
TC:19 AU: Zhou, Yu Sheng;Zhu, Guang;Niu, Simiao;Liu, Ying;Bai, Peng;Jing, Qingsheng;Wang, Zhong Lin;
10:4:97 Power-generating shoe insole based on triboelectric nanogenerators for self-powered consumer electronics
DOI:10.1016/j.nanoen.2013.08.002 JN:NANO ENERGY PY:2013
TC:35 AU: Zhu, Guang;Bai, Peng;Chen, Jun;Wang, Zhong Lin;
10:4:98 Enhancing Output Power of Cylindrical Triboelectric Nanogenerators by Segmentation Design and Multilayer Integration
DOI:10.1002/adfm.201401936 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:6 AU: Tang, Wei;Zhang, Chi;Han, Chang Bao;Wang, Zhong Lin;
10:4:99 Electrochemical Cathodic Protection Powered by Triboelectric Nanogenerator
DOI:10.1002/adfm.201401168 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:2 AU: Guo, Wenxi;Li, Xiaoyi;Chen, Mengxiao;Xu, Lu;Dong, Lin;Cao, Xia;Tang, Wei;Zhu, Jing;Lin, Changjian;Pan, Caofeng;Wang, Zhong Lin;
10:4:100 Simulation method for optimizing the performance of an integrated triboelectric nanogenerator energy harvesting system
DOI:10.1016/j.nanoen.2014.05.018 JN:NANO ENERGY PY:2014
TC:11 AU: Niu, Simiao;Zhou, Yu Sheng;Wang, Sihong;Liu, Ying;Lin, Long;Bando, Yoshio;Wang, Zhong Lin;
10:4:101 Harvesting energy from automobile brake in contact and non-contact mode by conjunction of triboelectrication and electrostatic-induction processes
DOI:10.1016/j.nanoen.2014.03.009 JN:NANO ENERGY PY:2014
TC:7 AU: Han, Chang Bao;Du, Weiming;Zhang, Chi;Tang, Wei;Zhang, Limin;Wang, Zhong Lin;
10:4:102 Membrane-Based Self-Powered Triboelectric Sensors for Pressure Change Detection and Its Uses in Security Surveillance and Healthcare Monitoring
DOI:10.1002/adfm.201401267 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:10 AU: Bai, Peng;Zhu, Guang;Jing, Qingshen;Yang, Jin;Chen, Jun;Su, Yuanjie;Ma, Jusheng;Zhang, Gong;Wang, Zhong Lin;
10:4:103 Harvesting Water Drop Energy by a Sequential Contact-Electrification and Electrostatic-Induction Process
DOI:10.1002/adma.201400373 JN:ADVANCED MATERIALS PY:2014
TC:14 AU: Lin, Zong-Hong;Cheng, Gang;Lee, Sangmin;Pradel, Ken C.;Wang, Zhong Lin;
10:4:104 Electret Film-Enhanced Triboelectric Nanogenerator Matrix for Self-Powered Instantaneous Tactile Imaging
DOI:10.1021/am406018h JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Yang, Ya;Zhang, Hulin;Zhong, Xiandai;Yi, Fang;Yu, Ruomeng;Zhang, Yue;Wang, Zhong Lin;
10:4:105 Fully Enclosed Cylindrical Single-Electrode-Based Triboelectric Nanogenerator
DOI:10.1021/am404611h JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Su, Yuanjie;Yang, Ya;Zhong, Xiandai;Zhang, Hulin;Wu, Zhiming;Jiang, Yadong;Wang, Zhong Lin;
10:4:106 Triboelectric-based harvesting of gas flow energy and powerless sensing applications
DOI:10.1016/j.apsusc.2014.07.025 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Taghavi, Majid;Sadeghi, Ali;Mazzolai, Barbara;Beccai, Lucia;Mattoli, Virgilio;
10:4:107 What Really Drives Chemical Reactions on Contact Charged Surfaces?
DOI:10.1021/ja300925h JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:19 AU: Baytekin, Bilge;Baytekin, H. Tarik;Grzybowski, Bartosz A.;
10:4:108 Applicability of triboelectric generator over a wide range of temperature
DOI:10.1016/j.nanoen.2014.01.001 JN:NANO ENERGY PY:2014
TC:4 AU: Wen, Xiaonan;Su, Yuanjie;Yang, Ya;Zhang, Hulin;Wang, Zhong Lin;
10:4:109 Triboelectric nanogenerator using nano-Ag ink as electrode material
DOI:10.1016/j.nanoen.2013.10.013 JN:NANO ENERGY PY:2014
TC:10 AU: Li, Wei;Sun, Jing;Chen, Minfang;
10:4:110 A power-transformed-and-managed triboelectric nanogenerator and its applications in a self-powered wireless sensing node
DOI:10.1088/0957-4484/25/22/225402 JN:NANOTECHNOLOGY PY:2014
TC:9 AU: Tang, Wei;Zhou, Tao;Zhang, Chi;Fan, Feng Ru;Han, Chang Bao;Wang, Zhong Lin;
10:4:111 Static Electricity Powered Copper Oxide Nanowire Microbicidal Electroporation for Water Disinfection
DOI:10.1021/nl5020958 JN:NANO LETTERS PY:2014
TC:1 AU: Liu, Chong;Xie, Xing;Zhao, Wenting;Yao, Jie;Kong, Desheng;Boehm, Alexandria B.;Cui, Yi;
10:4:112 A Novel Soft Metal-Polymer Composite for Multidirectional Pressure Energy Harvesting
DOI:10.1002/aenm.201400024 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:5 AU: Taghavi, Majid;Mattoli, Virgilio;Sadeghi, Ali;Mazzolai, Barbara;Beccai, Lucia;
10:4:113 Triboelectricity: Macroscopic Charge Patterns Formed by Self-Arraying Ions on Polymer Surfaces
DOI:10.1021/la301228j JN:LANGMUIR PY:2012
TC:19 AU: Burgo, Thiago A. L.;Ducati, Telma R. D.;Francisco, Kelly R.;Clinckspoor, Karl J.;Galembeck, Fernando;Galembeck, Sergio E.;
10:4:114 Enhancing the performance of triboelectric nanogenerator through prior-charge injection and its application on self-powered anticorrosion
DOI:10.1016/j.nanoen.2014.08.017 JN:NANO ENERGY PY:2014
TC:7 AU: Wang, Zhe;Cheng, Li;Zheng, Youbin;Qin, Yong;Wang, Zhong Lin;
10:4:115 Surface-charge engineering for high-performance triboelectric nanogenerator based on identical electrification materials
DOI:10.1016/j.nanoen.2014.08.007 JN:NANO ENERGY PY:2014
TC:2 AU: Wei, Xiao Yan;Zhu, Guang;Wang, Zhong Lin;
10:4:116 Self-Powered, Ultrasensitive, Flexible Tactile Sensors Based on Contact Electrification
DOI:10.1021/nl5005652 JN:NANO LETTERS PY:2014
TC:20 AU: Zhu, Guang;Yang, Wei Qing;Zhang, Tiejun;Jing, Qingshen;Chen, Jun;Zhou, Yu Sheng;Bai, Peng;Wang, Zhong Lin;
10:4:117 Harvesting Water Wave Energy by Asymmetric Screening of Electrostatic Charges on a Nanostructured Hydrophobic Thin-Film Surface
DOI:10.1021/nn5012732 JN:ACS NANO PY:2014
TC:17 AU: Zhu, Guang;Su, Yuanjie;Bai, Peng;Chen, Jun;Jing, Qingshen;Yang, Weiqing;Wang, Zhong Lin;
10:4:118 Reversible Photochemical Tuning of Net Charge Separation from Contact Electrification
DOI:10.1021/am501557m JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Gumbley, Patricia;Thomas, Samuel W., III;
10:4:119 Triboelectric charging of insulating polymers-some new perspectives
DOI:10.1063/1.3687233 JN:AIP ADVANCES PY:2012
TC:16 AU: Williams, Meurig W.;
10:4:120 Nanocontact Electrification: Patterned Surface Charges Affecting Adhesion, Transfer, and Printing
DOI:10.1021/la200773x JN:LANGMUIR PY:2011
TC:9 AU: Cole, Jesse J.;Barry, Chad R.;Knuesel, Robert J.;Wang, Xinyu;Jacobs, Heiko O.;
10:4:121 Layer-by-layer films for tunable and rewritable control of contact electrification
DOI:10.1039/c3sm51983j JN:SOFT MATTER PY:2013
TC:2 AU: Soh, Siowling;Chen, Xin;Vella, Sarah J.;Choi, Wonjae;Gong, Jinlong;Whitesides, George M.;
10:4:122 Friction charges up energy generation
DOI:10.1016/j.nanoen.2012.05.011 JN:NANO ENERGY PY:2012
TC:0 AU: Sealy, Cordelia;
10:5:1 Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
DOI:10.1103/PhysRevLett.104.137201 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:168 AU: Yi, J. B.;Lim, C. C.;Xing, G. Z.;Fan, H. M.;Van, L. H.;Huang, S. L.;Yang, K. S.;Huang, X. L.;Qin, X. B.;Wang, B. Y.;Wu, T.;Wang, L.;Zhang, H. T.;Gao, X. Y.;Liu, T.;Wee, A. T. S.;Feng, Y. P.;Ding, J.;
10:5:2 Dilute Doping, Defects, and Ferromagnetism in Metal Oxide Systems
DOI:10.1002/adma.200903891 JN:ADVANCED MATERIALS PY:2010
TC:173 AU: Ogale, Satishchandra B.;
10:5:3 Correlated d(0) ferromagnetism and photoluminescence in undoped ZnO nanowires
DOI:10.1063/1.3340930 JN:APPLIED PHYSICS LETTERS PY:2010
TC:105 AU: Xing, Guozhong;Wang, Dandan;Yi, Jiabao;Yang, Lili;Gao, Ming;He, Mi;Yang, Jinghai;Ding, Jun;Sum, Tze Chien;Wu, Tom;
10:5:4 Room-Temperature Ferromagnetism of Cu-Doped ZnO Films Probed by Soft X-Ray Magnetic Circular Dichroism
DOI:10.1103/PhysRevLett.105.207201 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:90 AU: Herng, T. S.;Qi, D. -C.;Berlijn, T.;Yi, J. B.;Yang, K. S.;Dai, Y.;Feng, Y. P.;Santoso, I.;Sanchez-Hanke, C.;Gao, X. Y.;Wee, Andrew T. S.;Ku, W.;Ding, J.;Rusydi, A.;
10:5:5 Ferromagnetism in metal oxide systems: interfaces, dopants, and defects
DOI:10.1039/c2tc00172a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:7 AU: Thakare, Vishal P.;Game, Onkar S.;Ogale, Satishchandra B.;
10:5:6 Tuning ferromagnetism in MgxZn1-xO thin films by band gap and defect engineering
DOI:10.1063/1.3485058 JN:APPLIED PHYSICS LETTERS PY:2010
TC:47 AU: Li, Yongfeng;Deng, Rui;Yao, Bin;Xing, Guozhong;Wang, Dandan;Wu, Tom;
10:5:7 Bound magnetic polarons and p-d exchange interaction in ferromagnetic insulating Cu-doped ZnO
DOI:10.1063/1.3579544 JN:APPLIED PHYSICS LETTERS PY:2011
TC:54 AU: Tian, Yufeng;Li, Yongfeng;He, Mi;Putra, Irwan Ade;Peng, Haiyang;Yao, Bin;Cheong, Siew Ann;Wu, Tom;
10:5:8 Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example
DOI:10.1063/1.3609964 JN:AIP ADVANCES PY:2011
TC:60 AU: Xing, G. Z.;Lu, Y. H.;Tian, Y. F.;Yi, J. B.;Lim, C. C.;Li, Y. F.;Li, G. P.;Wang, D.;Yao, B.;Ding, J.;Feng, Y. P.;Wu, T.;
10:5:9 Surface photoluminescence and magnetism in hydrothermally grown undoped ZnO nanorod arrays
DOI:10.1063/1.4705412 JN:APPLIED PHYSICS LETTERS PY:2012
TC:23 AU: Xu, Xiaoyong;Xu, Chunxiang;Lin, Yi;Ding, Tao;Fang, Shengjiang;Shi, Zengliang;Xia, Weiwei;Hu, Jingguo;
10:5:10 Robust Room-Temperature Ferromagnetism with Giant Anisotropy in Nd-Doped ZnO Nanowire Arrays
DOI:10.1021/nl301226k JN:NANO LETTERS PY:2012
TC:51 AU: Wang, Dandan;Chen, Qian;Xing, Guozhong;Yi, Jiabao;Bakaul, Saidur Rahman;Ding, Jun;Wang, Jinlan;Wu, Tom;
10:5:11 Origin of FM Ordering in Pristine Micro- and Nanostructured ZnO
DOI:10.1021/nl1001444 JN:NANO LETTERS PY:2010
TC:62 AU: Podila, R.;Queen, W.;Nath, A.;Arantes, Jeverson T.;Schoenhalz, Aline L.;Fazzio, A.;Dalpian, Gustavo M.;He, J.;Hwu, Shiou J.;Skove, Malcolm J.;Rao, Apparao M.;
10:5:12 Ubiquity of ferromagnetic signals in common diamagnetic oxide crystals
DOI:10.1103/PhysRevB.81.214414 JN:PHYSICAL REVIEW B PY:2010
TC:41 AU: Khalid, M.;Setzer, A.;Ziese, M.;Esquinazi, P.;Spemann, D.;Poeppl, A.;Goering, E.;
10:5:13 Emergent ferromagnetism in ZnO/Al2O3 core-shell nanowires: Towards oxide spinterfaces
DOI:10.1063/1.4813217 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Xing, G. Z.;Wang, D. D.;Cheng, C-J.;He, M.;Li, S.;Wu, T.;
10:5:14 Vacancy-induced intrinsic d(0) ferromagnetism and photoluminescence in potassium doped ZnO nanowires
DOI:10.1063/1.3601340 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:28 AU: Ghosh, S.;Khan, Gobinda Gopal;Das, Bipul;Mandal, K.;
10:5:15 A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates
DOI:10.1016/j.jallcom.2013.04.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:12 AU: Li, Yongfeng;Yao, Bin;Deng, Rui;Li, Binghui;Zhang, Zhenzhong;Shan, Chongxin;Zhao, Dongxu;Shen, Dezhen;
10:5:16 A perspective of recent progress in ZnO diluted magnetic semiconductors
DOI:10.1007/s00339-013-7658-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:8 AU: Yang, Zheng;
10:5:17 Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films
DOI:10.1063/1.3657412 JN:APPLIED PHYSICS LETTERS PY:2011
TC:27 AU: Zhang, B. Y.;Yao, B.;Li, Y. F.;Liu, A. M.;Zhang, Z. Z.;Li, B. H.;Xing, G. Z.;Wu, T.;Qin, X. B.;Zhao, D. X.;Shan, C. X.;Shen, D. Z.;
10:5:18 Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO2 thin films
DOI:10.1063/1.4705419 JN:APPLIED PHYSICS LETTERS PY:2012
TC:28 AU: Li, Yongfeng;Deng, Rui;Tian, Yufeng;Yao, Bin;Wu, Tom;
10:5:19 Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films
DOI:10.1063/1.3679560 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:37 AU: Zhan, Peng;Wang, Weipeng;Liu, Can;Hu, Yang;Li, Zhengcao;Zhang, Zhengjun;Zhang, Peng;Wang, Baoyi;Cao, Xingzhong;
10:5:20 Investigation on the formation mechanism of p-type Li-N dual-doped ZnO
DOI:10.1063/1.3518059 JN:APPLIED PHYSICS LETTERS PY:2010
TC:32 AU: Zhang, B. Y.;Yao, B.;Li, Y. F.;Zhang, Z. Z.;Li, B. H.;Shan, C. X.;Zhao, D. X.;Shen, D. Z.;
10:5:21 Experimental and first-principles study of ferromagnetism in Mn-doped zinc stannate nanowires
DOI:10.1063/1.4815884 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Deng, Rui;Zhou, Hang;Li, Yong-Feng;Wu, Tom;Yao, Bin;Qin, Jie-Ming;Wan, Yu-Chun;Jiang, Da-Yong;Liang, Qing-Cheng;Liu, Lei;
10:5:22 Polaronic transport and magnetism in Ag-doped ZnO
DOI:10.1063/1.3665401 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: He, M.;Tian, Y. F.;Springer, D.;Putra, I. A.;Xing, G. Z.;Chia, E. E. M.;Cheong, S. A.;Wu, T.;
10:5:23 Tuning magnetoresistance and exchange coupling in ZnO by doping transition metals
DOI:10.1063/1.3664116 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Tian, Yu-feng;Li, Yong-feng;Wu, Tom;
10:5:24 Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals
DOI:10.1063/1.4793574 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Zhan, Peng;Xie, Zheng;Li, Zhengcao;Wang, Weipeng;Zhang, Zhengjun;Li, Zhuoxin;Cheng, Guodong;Zhang, Peng;Wang, Baoyi;Cao, Xingzhong;
10:5:25 Defect-Driven Magnetism in Luminescent n/p-Type Pristine and Gd-Substituted SnO2 Nanocrystalline Thin Films
DOI:10.1021/am300023a JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:15 AU: Ghosh, S.;Khan, Gobinda Gopal;Mandal, K.;
10:5:26 Fabrication and properties of Co doped ZnO spherical assemblies
DOI:10.1016/j.jallcom.2013.10.206 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Barick, K. C.;Aslam, M.;Bahadur, D.;
10:5:27 Anisotropic magnetoresistance and weak spin-orbital coupling in doped ZnO thin films
DOI:10.1063/1.3681795 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Tian, Yufeng;Lin, Weinan;Wu, Tom;
10:5:28 Surface defects induced ferromagnetism in mechanically milled nanocrystalline ZnO
DOI:10.1063/1.4818802 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Ghose, Srabantika;Sarkar, A.;Chattopadhyay, S.;Chakrabarti, M.;Das, D.;Rakshit, T.;Ray, S. K.;Jana, D.;
10:5:29 d(0) Ferromagnetic Interface between Nonmagnetic Perovskites
DOI:10.1103/PhysRevLett.109.127207 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:17 AU: Oja, R.;Tyunina, M.;Yao, L.;Pinomaa, T.;Kocourek, T.;Dejneka, A.;Stupakov, O.;Jelinek, M.;Trepakov, V.;van Dijken, S.;Nieminen, R. M.;
10:5:30 Hydrogen-induced ferromagnetism in ZnO single crystals investigated by magnetotransport
DOI:10.1103/PhysRevB.85.134424 JN:PHYSICAL REVIEW B PY:2012
TC:11 AU: Khalid, M.;Esquinazi, P.;
10:5:31 Influence of Film Thickness and Oxygen Partial Pressure on Cation-Defect-Induced Intrinsic Ferromagnetic Behavior in Luminescent p-Type Na-Doped ZnO Thin Films
DOI:10.1021/am302649r JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:9 AU: Ghosh, S.;Khan, Gobinda Gopal;Varma, Shikha;Mandal, K.;
10:5:32 Dependence of energy transfer and photoluminescence on tailored defects in Eu-doped ZnO nanosheets-based microflowers
DOI:10.1016/j.jallcom.2010.05.105 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:27 AU: Wang, D. D.;Xing, G. Z.;Yang, J. H.;Yang, L. L.;Gao, M.;Cao, J.;Zhang, Y. J.;Yao, B.;
10:5:33 Influence of Li-N and Li-F co-doping on defect-induced intrinsic ferromagnetic and photoluminescence properties of arrays of ZnO nanowires
DOI:10.1063/1.4747929 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Ghosh, Shyamsundar;Khan, Gobinda Gopal;Varma, Shikha;Mandal, Kalyan;
10:5:34 Room temperature ferromagnetism in CuO/Cu2O microspheres: Towards interface effect
DOI:10.1063/1.4861884 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Gao, Daqiang;Zhang, Zhipeng;Xu, Qiang;Zhang, Jing;Yan, Zhongjie;Yao, Jinli;Xue, Desheng;
10:5:35 Ferromagnetic (Mn, N)-codoped ZnO nanopillars array: Experimental and computational insights
DOI:10.1063/1.4861936 JN:APPLIED PHYSICS LETTERS PY:2014
TC:13 AU: Wang, D. D.;Xing, G. Z.;Yan, F.;Yan, Y. S.;Li, S.;
10:5:36 Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy
DOI:10.1016/j.jcrysgro.2010.11.059 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:20 AU: Yang, Z.;Zuo, Z.;Zhou, H. M.;Beyermann, W. P.;Liu, J. L.;
10:5:37 Defect-trapped electrons and ferromagnetic exchange in ZnO
DOI:10.1103/PhysRevB.84.054441 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Chakrabarty, Aurab;Patterson, Charles H.;
10:5:38 Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide
DOI:10.1103/PhysRevB.87.155151 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Li, Yongfeng;Deng, Rui;Lin, Weinan;Tian, Yufeng;Peng, Haiyang;Yi, Jiabao;Yao, Bin;Wu, Tom;
10:5:39 Surface ferromagnetism in hydrogenated-ZnO film
DOI:10.1063/1.3581046 JN:APPLIED PHYSICS LETTERS PY:2011
TC:25 AU: Li, T.;Ong, C. S.;Herng, T. S.;Yi, J. B.;Bao, N. N.;Xue, J. M.;Feng, Y. P.;Ding, J.;
10:5:40 Ferromagnetism in Li doped ZnO nanoparticles: The role of interstitial Li
DOI:10.1063/1.4767364 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:17 AU: Awan, Saif Ullah;Hasanain, S. K.;Bertino, Massimo F.;Jaffari, G. Hassnain;
10:5:41 Ferromagnetic interaction between Cu ions in the bulk region of Cu-doped ZnO nanowires
DOI:10.1103/PhysRevB.84.153203 JN:PHYSICAL REVIEW B PY:2011
TC:21 AU: Kataoka, T.;Yamazaki, Y.;Singh, V. R.;Fujimori, A.;Chang, F-H;Lin, H-J;Huang, D. J.;Chen, C. T.;Xing, G. Z.;Seo, J. W.;Panagopoulos, C.;Wu, T.;
10:5:42 Deep level related photoluminescence in ZnMgO
DOI:10.1063/1.3518480 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Trunk, M.;Venkatachalapathy, V.;Galeckas, A.;Kuznetsov, A. Yu.;
10:5:43 Charge transfer dynamics in Cu-doped ZnO nanowires
DOI:10.1063/1.3558912 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Xing, Guozhong;Xing, Guichuan;Li, Mingjie;Sie, Edbert Jarvis;Wang, Dandan;Sulistio, Arief;Ye, Quan-Lin;Huan, Cheng Hon Alfred;Wu, Tom;Sum, Tze Chien;
10:5:44 Ferromagnetism on the unpolished surfaces of single crystal metal oxide substrates
DOI:10.1063/1.3611034 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Yee, S. M. M.;Crandles, D. A.;Goncharova, L. V.;
10:5:45 Room temperature ferromagnetism in SnO2 nanoparticles: an experimental and density functional study
DOI:10.1039/c4tc01070a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Chetri, Pawan;Choudhury, Biswajit;Choudhury, Amarjyoti;
10:5:46 Defect-induced ferromagnetism in crystalline SrTiO3
DOI:10.1016/j.jmmm.2011.01.018 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:23 AU: Potzger, K.;Osten, J.;Levin, A. A.;Shalimov, A.;Talut, G.;Reuther, H.;Arpaci, S.;Buerger, D.;Schmidt, H.;Nestler, T.;Meyer, D. C.;
10:5:47 Lithium doping effects on structural and ferromagnetic properties of Sn0.95Ni0.05O2
DOI:10.1016/j.matlet.2014.09.082 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Xi, Jianguo;Peng, Zhijian;Fu, Xiuli;
10:5:48 Magnetism in Dopant-Free ZnO Nanoplates
DOI:10.1021/nl203033h JN:NANO LETTERS PY:2012
TC:33 AU: Hong, Jung-Il;Choi, Jiil;Jang, Seung Soon;Gu, Jiyeong;Chang, Yangling;Wortman, Gregory;Snyder, Robert L.;Wang, Zhong Lin;
10:5:49 Tuning surface metallicity and ferromagnetism by hydrogen adsorption at the polar ZnO(0001) surface
DOI:10.1103/PhysRevB.81.115301 JN:PHYSICAL REVIEW B PY:2010
TC:28 AU: Sanchez, N.;Gallego, S.;Cerda, J.;Munoz, M. C.;
10:5:50 Intrinsic room temperature ferromagnetism in boron-doped ZnO
DOI:10.1063/1.3524493 JN:APPLIED PHYSICS LETTERS PY:2010
TC:31 AU: Xu, X. G.;Yang, H. L.;Wu, Y.;Zhang, D. L.;Wu, S. Z.;Miao, J.;Jiang, Y.;Qin, X. B.;Cao, X. Z.;Wang, B. Y.;
10:5:51 Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films
DOI:10.1063/1.4737881 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Zhan, Peng;Wang, Weipeng;Xie, Zheng;Li, Zhengcao;Zhang, Zhengjun;Zhang, Peng;Wang, Baoyi;Cao, Xingzhong;
10:5:52 Defect-induced ferromagnetism in ZnO nanoparticles prepared by mechanical milling
DOI:10.1063/1.4793428 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: The-Long Phan;Zhang, Y. D.;Yang, D. S.;Nghia, N. X.;Thanh, T. D.;Yu, S. C.;
10:5:53 Electronic structure of Cu-doped ZnO thin films by x-ray absorption, magnetic circular dichroism, and resonant inelastic x-ray scattering
DOI:10.1063/1.3372758 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:23 AU: Thakur, P.;Bisogni, V.;Cezar, J. C.;Brookes, N. B.;Ghiringhelli, G.;Gautam, S.;Chae, K. H.;Subramanian, M.;Jayavel, R.;Asokan, K.;
10:5:54 Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions
DOI:10.1063/1.4894153 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Awan, Saif Ullah;Hasanain, S. K.;Jaffari, G. Hassnain;Anjum, D. H.;Qurashi, Umar S.;
10:5:55 Effect of vacuum-annealing on the d(0) ferromagnetism of undoped In2O3 films
DOI:10.1016/j.jmmm.2012.04.050 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:13 AU: Sun, Shaohua;Wu, Ping;Xing, Pengfei;
10:5:56 Interface mediated ferromagnetism in bulk CuO/Cu2O composites
DOI:10.1063/1.4755766 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Gao, Daqiang;Zhang, Zhipeng;Yang, Zhaolong;Xue, Desheng;
10:5:57 Magnetism mechanism in ZnO and ZnO doped with nonmagnetic elements X (X = Li, Mg, and Al): A first-principles study
DOI:10.1063/1.3698096 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Wang, Q. J.;Wang, J. B.;Zhong, X. L.;Tan, Q. H.;Hu, Z.;Zhou, Y. C.;
10:5:58 Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching
DOI:10.1063/1.4798240 JN:APPLIED PHYSICS LETTERS PY:2013
TC:15 AU: Huang, X. H.;Zhang, C.;Tay, C. B.;Venkatesan, T.;Chua, S. J.;
10:5:59 Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition
DOI:10.1063/1.4879463 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Xing, G. Z.;Yi, J. B.;Yan, F.;Wu, T.;Li, S.;
10:5:60 First-principles prediction of electronic structure and magnetic ordering of rare-earth metals doped ZnO
DOI:10.1016/j.jallcom.2014.07.218 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Zhang, X. J.;Mi, W. B.;Wang, X. C.;Bai, H. L.;
10:5:61 Influence of nitrogen on the defects and magnetism of ZnO:N thin films
DOI:10.1063/1.3468690 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Wu, Ke Yue;Fang, Qing Qing;Wang, Wei Na;Zhou, Chang;Huang, Wen Juan;Li, Jin Guang;Lv, Qing Rong;Liu, Yan Mei;Zhang, Qi Ping;Zhang, Han Ming;
10:5:62 Positron annihilation study of the interfacial defects in ZnO nanocrystals: Correlation with ferromagnetism
DOI:10.1063/1.3291134 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:30 AU: Wang, Dong;Chen, Z. Q.;Wang, D. D.;Qi, N.;Gong, J.;Cao, C. Y.;Tang, Z.;
10:5:63 Enhanced room-temperature ferromagnetism in un-doped ZnO thin films by thermal annealing in a strong magnetic field
DOI:10.1063/1.4720744 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Zhan, Peng;Wang, Weipeng;Xie, Qian;Li, Zhengcao;Zhang, Zhengjun;
10:5:64 Ultrathin single-crystal ZnO nanobelts: Ag-catalyzed growth and field emission property
DOI:10.1088/0957-4484/21/25/255701 JN:NANOTECHNOLOGY PY:2010
TC:37 AU: Xing, G. Z.;Fang, X. S.;Zhang, Z.;Wang, D. D.;Huang, X.;Guo, J.;Liao, L.;Zheng, Z.;Xu, H. R.;Yu, T.;Shen, Z. X.;Huan, C. H. A.;Sum, T. C.;Zhang, H.;Wu, T.;
10:5:65 Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule
DOI:10.1038/am.2012.56 JN:NPG ASIA MATERIALS PY:2012
TC:20 AU: Li, Yongfeng;Yin, Wanjian;Deng, Rui;Chen, Rui;Chen, Jing;Yan, Qingyu;Yao, Bin;Sun, Handong;Wei, Su-Huai;Wu, Tom;
10:5:66 Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping
DOI:10.1063/1.4861165 JN:APPLIED PHYSICS LETTERS PY:2014
TC:8 AU: Lee, J. J.;Xing, G. Z.;Yi, J. B.;Chen, T.;Ionescu, M.;Li, S.;
10:5:67 First-principles investigation of the electronic and magnetic properties of ZnO nanosheet with intrinsic defects
DOI:10.1016/j.commatsci.2013.08.018 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Qin, Guoping;Wang, Xinqiang;Zheng, Ji;Kong, Chunyang;Zeng, Bing;
10:5:68 Effect of Li-doping on the magnetic properties of ZnO with Zn vacancies
DOI:10.1063/1.4707888 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Gao, Hui-Xia;Xia, Jian-Bai;
10:5:69 Ferromagnetism in Gd doped ZnO nanowires: A first principles study
DOI:10.1063/1.4904860 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Aravindh, S. Assa;Schwingenschloegl, Udo;Roqan, Iman S.;
10:5:70 Enhancement of ferromagnetism of ZnO:Co nanocrystals by post-annealing treatment: The role of oxygen interstitials and zinc vacancies
DOI:10.1016/j.matlet.2014.02.063 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Ren, Hongtao;Xiang, Gang;Gu, Gangxu;Zhang, Xi;
10:5:71 Cationic vacancies and anomalous spectral-weight transfer in Ti1-xTaxO2 thin films studied via polarization-dependent near-edge x-ray absorption fine structure spectroscopy
DOI:10.1103/PhysRevB.87.245201 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Qi, Dong-Chen;Barman, Arkajit Roy;Debbichi, Lamjed;Dhar, S.;Santoso, Iman;Asmara, Teguh Citra;Omer, Humair;Yang, Kesong;Krueger, Peter;Wee, Andrew T. S.;Venkatesan, T.;Rusydi, Andrivo;
10:5:72 Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films
DOI:10.1063/1.3698314 JN:AIP ADVANCES PY:2012
TC:5 AU: Zhuo, Shi-Yi;Liu, Xue-Chao;Xiong, Ze;Yang, Jian-Hua;Shi, Er-Wei;
10:5:73 Unexpected magnetization enhancement in hydrogen plasma treated ferromagnetic (Zn,Cu)O film
DOI:10.1063/1.4893946 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Hu, Liang;Zhu, Liping;He, Haiping;Ye, Zhizhen;
10:5:74 Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering
DOI:10.1016/j.jallcom.2014.01.247 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Debbichi, M.;Souissi, M.;Fouzri, A.;Schmerber, G.;Said, M.;Alouani, M.;
10:5:75 Large room temperature magnetoresistance of transparent Fe and Ni doped ZnO thin films
DOI:10.1063/1.4775769 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Chikoidze, E.;Boshta, M.;Sayed, M. H.;Dumont, Y.;
10:5:76 Ferromagnetism in undoped One-dimensional GaN Nanowires
DOI:10.1063/1.4878976 JN:AIP ADVANCES PY:2014
TC:0 AU: Jeganathan, K.;Purushothaman, V.;Debnath, R.;Arumugam, S.;
10:5:77 Observation of room temperature ferromagnetism in pure La2O3 nanoparticles
DOI:10.1007/s00339-014-8223-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Xu, Qiang;Gao, Daqiang;Zhang, Jing;Yang, Zhaolong;Zhang, Zhipeng;Rao, Jinwei;Xue, Desheng;
10:5:78 Magnetic field influence on the transient photoresistivity of defect-induced magnetic ZnO films
DOI:10.1063/1.3640231 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Zapata, C.;Khalid, M.;Simonelli, G.;Villafuerte, M.;Heluani, S. P.;Esquinazi, P.;
10:5:79 Unexpected room-temperature ferromagnetism in bulk ZnO
DOI:10.1063/1.4825268 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Chen, Yu-Chun;Goering, Eberhard;Jeurgens, Lars;Wang, Zumin;Phillipp, Fritz;Baier, Johannes;Tietze, Thomas;Schuetz, Gisela;
10:5:80 Positron annihilation studies of vacancy-type defects and room temperature ferromagnetism in chemically synthesized Li-doped ZnO nanocrystals
DOI:10.1016/j.jallcom.2013.12.149 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Ghosh, S.;Khan, Gobinda Gopal;Mandal, K.;Thapa, Samudrajit;Nambissan, P. M. G.;
10:5:81 Paramagnetism in single-phase Sn1-xCoxO2 dilute magnetic semiconductors
DOI:10.1063/1.3437641 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Ghosh, S.;De Munshi, D.;Mandel, K.;
10:5:82 Structural and electrical characteristics of high quality (100) orientated-Zn3N2 thin films grown by radio-frequency magnetron sputtering
DOI:10.1063/1.3493208 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Xing, G. Z.;Wang, D. D.;Yao, B.;Qune, L. F. N. Ah;Yang, T.;He, Q.;Yang, J. H.;Yang, L. L.;
10:5:83 Characterization of lattice defects by x-ray absorption spectroscopy at the Zn K-edge in ferromagnetic, pure ZnO films
DOI:10.1063/1.3631774 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Haug, J.;Chasse, A.;Dubiel, M.;Eisenschmidt, Ch.;Khalid, M.;Esquinazi, P.;
10:5:84 Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles
DOI:10.1063/1.4900413 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Awan, Saif Ullah;Hasanain, S. K.;Anjum, D. H.;Awan, M. S.;Shah, Saqlain A.;
10:5:85 Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles
DOI:10.1063/1.4862306 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Xue, Xudong;Liu, Liangliang;Wang, Zhu;Wu, Yichu;
10:5:86 Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films
DOI:10.1016/j.jcrysgro.2011.07.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Zhuo, Shi-Yi;Liu, Xue-Chao;Xiong, Ze;Yang, Jian-Hua;Shi, Er-Wei;
10:5:87 Ag and N acceptors in ZnO: An ab initio study of acceptor pairing, doping efficiency, and the role of hydrogen
DOI:10.1103/PhysRevB.85.165212 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Volnianska, O.;Boguslawski, P.;Kaminska, E.;
10:5:88 Lithium niobate nanoparticulate clad on the core of single mode optical fiber for temperature and magnetic field sensing
DOI:10.1063/1.4738884 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Rao, Ch. N.;Bharadwaj, Anoopam;Datar, Suwarna;Kale, S. N.;
10:5:89 Defect-induced magneto-optic properties of MgO nanoparticles realized as optical-fiber-based low-field magnetic sensor
DOI:10.1063/1.4824772 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Rao, Ch N.;Nakate, Umesh T.;Choudhary, R. J.;Kale, S. N.;
10:5:90 Carrier concentration dependence of ferroelectric transition in multiferroic Li doped and Li-Co co-doped ZnO nanoparticles
DOI:10.1063/1.4881265 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Awan, Saif Ullah;Hasanain, S. K.;Jaffari, G. Hassnain;Mehmood, Zahid;
10:5:91 The effects of Ni-Na codoping on structure and properties of ZnO films by pulsed laser deposition
DOI:10.1016/j.jallcom.2011.10.074 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Jiang, Jie;Wang, Xuetao;Zhu, Liping;Zhang, Yinzhu;Ye, Zhizhen;He, Bo;
10:5:92 Ferromagnetism induced by the charge transfer in Al-doped ZnO nanoparticles
DOI:10.1016/j.jallcom.2014.07.011 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Liu, Yanyu;Zhou, Wei;Wu, Ping;
10:5:93 Investigating thermal stability of structural defects and its effect on d(0) ferromagnetism in undoped SnO2
DOI:10.1063/1.4812382 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Kamble, Vinayak B.;Bhat, S. V.;Umarji, A. M.;
10:5:94 The local structure and ferromagnetism in Fe-implanted SrTiO3 single crystals
DOI:10.1063/1.4886875 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Lobacheva, O.;Chavarha, M.;Yiu, Y. M.;Sham, T. K.;Goncharova, L. V.;
10:5:95 Identifying local dopant structures and their impact on the magnetic properties of spintronic materials
DOI:10.1103/PhysRevB.83.115207 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Green, R. J.;Chang, G. S.;Zhang, X. Y.;Dinia, A.;Kurmaev, E. Z.;Moewes, A.;
10:5:96 Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films
DOI:10.1063/1.3690113 JN:AIP ADVANCES PY:2012
TC:5 AU: Barman, A. Roy;Annadi, A.;Gopinadhan, K.;Lu, W. M.;Ariando;Dhar, S.;Venkatesan, T.;
10:5:97 Reversible ferromagnetism in rutile TiO2 single crystals induced by nickel impurities
DOI:10.1063/1.4756799 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Zhao, Y. L.;Motapothula, M.;Yakovlev, N. L.;Liu, Z. Q.;Dhar, S.;Rusydi, A.;Ariando;Breese, M. B. H.;Wang, Q.;Venkatesan, T.;
10:5:98 Correlating defect induced ferromagnetism and gas sensing properties of undoped tin oxide sensors
DOI:10.1063/1.4885424 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kamble, Vinayak B.;Umarji, Arun M.;
10:5:99 A search for defect related ferromagnetism in SrTiO3
DOI:10.1063/1.3481344 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Crandles, D. A.;DesRoches, B.;Razavi, F. S.;
10:5:100 Magnetism in transition-metal-doped ZnO: A first-principles study
DOI:10.1063/1.4739450 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Gu, Gangxu;Xiang, Gang;Luo, Jia;Ren, Hongtao;Lan, Mu;He, Duanwei;Zhang, Xi;
10:5:101 Magnetic properties of ZnO nanoclusters
DOI:10.1063/1.4707946 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Zhao, X. G.;Tang, Z.;
10:5:102 Transport properties of hydrogenated ZnO microwires
DOI:10.1557/jmr.2013.219 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:2 AU: Lorite, Israel;Esquinazi, Pablo;Zapata, Cecilia;Heluani, Silvia P.;
10:5:103 Zinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films
DOI:10.1155/2012/295358 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:3 AU: Ren, Hongtao;Xiang, Gang;Gu, Gangxu;Zhang, Xi;Wang, Wenjun;Zhang, Peng;Wang, Baoyi;Cao, Xingzhong;
10:5:104 Ultrafast carrier dynamics of near-band-edge emission in single-crystal ZnO nanorods
DOI:10.1016/j.materresbull.2011.02.007 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:2 AU: Wang, Dandan;Xing, Guozhong;Wang, Xinying;Yin, Dongmei;Zhou, Mi;Guo, Qing;Yang, Jinghai;Yang, Lili;Cao, Jian;Yan, Yongsheng;
10:5:105 Room-temperature ferromagnetism and the scaling relation between magnetization and average granule size in nanocrystalline Zn/ZnO core-shell structures prepared by sputtering
DOI:10.1088/0957-4484/21/14/145705 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Li, L. Y.;Cheng, Y. H.;Luo, X. G.;Liu, Hui;wen, G. H.;Zheng, R. K.;Ringer, S. P.;
10:5:106 Defect induced optical bandgap narrowing in undoped SnO2 nanocrystals
DOI:10.1063/1.4819451 JN:AIP ADVANCES PY:2013
TC:6 AU: Kamble, Vinayak B.;Umarji, Arun M.;
10:5:107 Decoupled scenario between the conductive carriers and the ferromagnetism in epitaxial Zn0.85-xMgxCo0.15O thin films
DOI:10.1063/1.4893563 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhu, Dapeng;Liu, Guolei;Tian, Yufeng;Yan, Shishen;Cao, Qiang;Cai, Li;Fu, Maoxiang;Zhang, Jie;Zhang, Kun;Ye, Shengtao;Li, Huanhuan;Hu, Shujun;Chen, Yanxue;Kang, Shishou;Dai, Youyong;Mei, Liangmo;
10:5:108 Optical demagnetization in defect-mediated ferromagnetic ZnO:Cu films
DOI:10.1063/1.4865206 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Hu, L.;Zhu, L. P.;He, H. P.;Ye, Z. Z.;
10:5:109 Enhancement of Co substitution induced by Eu codoping in ZnO-based diluted magnetic semiconducting thin films
DOI:10.1063/1.3298507 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Photongkam, P.;Zhang, Y. B.;Assadi, M. H. N.;Li, S.;Yu, D.;Ionescu, M.;Pan, A. V.;
10:5:110 Origin of the giant negative photoresistance of ZnO single crystals
DOI:10.1063/1.3486214 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Barzola-Quiquia, J.;Esquinazi, P.;Villafuerte, M.;Heluani, S. P.;Poeppl, A.;Eisinger, K.;
10:5:111 Magnetism and stability of noncompensated anion-cation codoped ZnO
DOI:10.1063/1.4789013 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Pan, Jing;Wang, Shudong;Zhang, Daoyu;Hu, Jingguo;Chen, Qian;Wang, Jinlan;
10:5:112 Enhanced ferromagnetism by lithium doping in Sn0.95Fe0.05O2
DOI:10.1016/j.jmmm.2014.01.043 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:2 AU: Xi, Jian-guo;Peng, Zhi-jian;Fu, Xiu-li;
10:5:113 Room-temperature p-induced surface ferromagnetism: First-principles study
DOI:10.1103/PhysRevB.84.205306 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Fischer, Guntram;Sanchez, Nadiezhda;Adeagbo, Waheed;Lueders, Martin;Szotek, Zdzislawa;Temmerman, Walter M.;Ernst, Arthur;Hergert, Wolfram;Carmen Munoz, M.;
10:5:114 Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy
DOI:10.1063/1.4794799 JN:AIP ADVANCES PY:2013
TC:0 AU: Zuo, Zheng;Morshed, Muhammad;Beyermann, W. P.;Zheng, Jian-Guo;Xin, Yan;Liu, Jianlin;
10:5:115 Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition
DOI:10.1007/s00339-014-8263-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Liu, Shiu-Jen;Su, Shih-Hao;Juang, Jenh-Yih;
10:5:116 Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films
DOI:10.1063/1.4721807 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Kanoun, Mohammed Benali;Goumri-Said, Souraya;Manchon, Aurelien;Schwingenschloegl, Udo;
10:5:117 Oxygen interstitials enhanced room temperature ferromagnetism in undoped zinc oxide
DOI:10.1016/j.apsusc.2012.01.005 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: You, H.;Yang, J.;Zhu, J. Y.;Xu, W. F.;Tang, X. D.;
10:5:118 Ab initio investigation on the magnetic ordering in Gd doped ZnO
DOI:10.1063/1.3574924 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Bantounas, Ioannis;Goumri-Said, Souraya;Kanoun, Mohammed Benali;Manchon, Aurelien;Roqan, Iman;Schwingenschloegl, Udo;
10:5:119 Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy
DOI:10.1063/1.4749397 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Zuo, Zheng;Zhou, Huimei;Olmedo, Mario J.;Kong, Jieying;Beyermann, Ward P.;Zheng, Jian-Guo;Xin, Yan;Liu, Jianlin;
10:5:120 Density-functional study on the ferromagnetism of Mn-doped SnO2
DOI:10.1063/1.4824368 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Zhang, Kai-Cheng;Li, Yong-Feng;Liu, Yong;Chi, Feng;
10:5:121 Study of Zn-1 (-) xCoxO (0.02 <= x <= 0.08) dilute magnetic semiconductor prepared by mechanosynthesis route
DOI:10.1016/j.jmmm.2010.01.017 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:11 AU: Ghosh, S.;Mandal, K.;
10:5:122 Ferromagnetic and photoluminescence properties of Cu-doped ZnO nanorods by radio frequency magnetron sputtering
DOI:10.1016/j.matchemphys.2013.01.049 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:6 AU: Jin, C. G.;Yu, T.;Yang, Y.;Wu, Z. F.;Zhuge, L. J.;Wu, X. M.;Feng, Z. C.;
10:5:123 Excellent piezoelectric and electrical properties of lithium-doped ZnO nanowires for nanogenerator applications
DOI:10.1016/j.nanoen.2014.06.014 JN:NANO ENERGY PY:2014
TC:5 AU: Chang, Yu-Tsui;Chen, Jul-Yuan;Yang, Tzu-Ping;Huang, Chun-Wei;Chiu, Chung-Hua;Yeh, Ping-Hung;Wu, Wen-Wei;
10:5:124 Hybrid functional study of structural, electronic and magnetic properties of S-doped ZnO with and without neutral vacancy
DOI:10.1016/j.jallcom.2013.06.121 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Debbichi, M.;Sakhraoui, T.;Debbichi, L.;Said, M.;
10:5:125 Intrinsic ambient ferromagnetism in ZnO:Co induced by Eu codoping
DOI:10.1063/1.3530840 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Assadi, M. H. N.;Zhang, Y. B.;Photongkam, P.;Li, S.;
10:5:126 Structural and magnetic properties of N doped ZnO thin films
DOI:10.1063/1.4714686 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Jinda, Kajal;Tomar, Monika;Katiyar, R. S.;Gupta, Vinay;
10:5:127 Magnetism of BaB6 thin films synthesized by pulsed laser deposition
DOI:10.1063/1.3675616 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Ackland, K.;Venkatesan, M.;Coey, J. M. D.;
10:5:128 Electronic structure of Co-doped ZnO nanorods
DOI:10.1063/1.4757634 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Neffati, Ahmed;Souissi, Hajer;Kammoun, Souha;
10:5:129 Structural and magnetic studies of Cu-doped ZnO films synthesized via a hydrothermal route
DOI:10.1039/c0jm01100b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:16 AU: Li, Tong;Fan, Haiming;Yi, Jiabao;Herng, Tun Seng;Ma, Yuwei;Huang, Xuelian;Xue, Junmin;Ding, Jun;
10:5:130 Dependence of ferromagnetic properties on growth oxygen partial pressure in boron-doped ZnO thin films
DOI:10.1007/s10853-012-6528-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Yang, Hailing;Xu, Xiaoguang;Zhou, Xiaoye;Ma, Yannan;Dong, Jing;Wang, Tianqi;Miao, Jun;Jiang, Yong;
10:5:131 Room Temperature Ferromagnetism of (Mn,Fe) Codoped ZnO Nanowires Synthesized by Chemical Vapor Deposition
DOI:10.1155/2011/367156 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:1 AU: Chang, Yongqin;Wang, Pengwei;Sun, Qingling;Wang, Yongwei;Long, Yi;
10:5:132 Origin of Long-Range Ferromagnetic Ordering in Metal-Organic Frameworks with Antiferromagnetic Dimeric-Cu(II) Building Units
DOI:10.1021/ja3077654 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:11 AU: Shen, Lei;Yang, Shuo-Wang;Xiang, Shengchang;Liu, Tao;Zhao, Bangchuan;Ng, Man-Fai;Goeettlicher, Joerg;Yi, Jiabao;Li, Sean;Wang, Lan;Ding, Jun;Chen, Banglin;Wei, Su-Huai;Feng, Yuan Ping;
10:5:133 Charge-transfer induced ferromagnetism in nanostructured ZnO/Al powders: An x-ray absorption near edge structure study
DOI:10.1063/1.3677508 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Chen, S. J.;Garitaonandia, J. S.;Suzuki, K.;
10:5:134 Effects of dopants on magnetic properties of Cu-doped ZnO thin films
DOI:10.1007/s10853-011-5830-z JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:5 AU: Yang, Hailing;Xu, Xiaoguang;Wu, Shizhe;Wu, Kai;Ai, Chao;Miao, Jun;Jiang, Yong;
10:5:135 Tailoring photoluminescence in strontium aluminate phosphors using fluxing agent and activators: Rational synthesis via a facile microwave-assisted method
DOI:10.1016/j.mssp.2014.09.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Wang, H. F.;Xing, G. Z.;Wang, X. Y.;Bai, X. G.;Zhang, L.;Li, S.;
10:5:136 First-principles study of oxygen vacancies in MgxZn1-xO alloys
DOI:10.1103/PhysRevB.81.024103 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Boonchun, Adisak;Lambrecht, Walter R. L.;
10:5:137 Critical role of Fock exchange in characterizing dopant geometry and magnetic interaction in magnetic semiconductors
DOI:10.1103/PhysRevB.89.155110 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Pham, A.;Assadi, M. H. N.;Yu, A. B.;Li, S.;
10:5:138 Optical alignment of the exciton in ZnO nanoparticles
DOI:10.1063/1.3504252 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Chassaing, P. -M.;Balocchi, A.;Amand, T.;Saint-Macary, L.;Kahn, M. L.;Chaudret, B.;Marie, X.;
10:5:139 First principles study on magnetic properties of Zn vacancies in ZnO doped with single chalcogen X (X = S, Se, and Te)
DOI:10.1063/1.3562168 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Sargolzaei, Mahdi;Lotfizadeh, Neda;Hayn, Roland;
10:5:140 Magnetism and structure of anatase (Ti1-xVx)O-2 films
DOI:10.1063/1.3679434 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Le Roy, D.;Valloppilly, S.;Skomski, R.;Liou, S. -H.;Sellmyer, D. J.;
10:5:141 Photoluminescence and Raman Spectroscopy of Polycrystalline ZnO Nanofibers Deposited by Electrospinning
DOI:10.1007/s11664-011-1688-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:2 AU: Sen, Banani;Stroscio, Michael;Dutta, Mitra;
10:5:142 Background signal from substrates in characterizations of magnetic thin films
DOI:10.1016/j.jmmm.2013.07.013 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:0 AU: Wu, Xiaojie;Zhang, Zhenzhong;Yu, Yang;Meng, Jian;
10:5:143 Nonlocal Effects on Magnetism in the Diluted Magnetic Semiconductor Ga1-xMnxAs
DOI:10.1103/PhysRevLett.104.037201 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:4 AU: Yu, Unjong;Nili, Abdol-Madjid;Mikelsons, Karlis;Moritz, Brian;Moreno, Juana;Jarrell, Mark;
10:5:144 Study of electronic and magnetic properties of binary zinc sulfide and ternary manganese- and iron-substituted alloys
DOI:10.1016/j.mssp.2013.02.022 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Abbad, A.;Bentata, S.;Bentounes, H. A.;Benstaali, W.;Bouadjemi, B.;
10:6:1 CuO nanostructures: Synthesis, characterization, growth mechanisms, fundamental properties, and applications
DOI:10.1016/j.pmatsci.2013.09.003 JN:PROGRESS IN MATERIALS SCIENCE PY:2014
TC:102 AU: Zhang, Qiaobao;Zhang, Kaili;Xu, Daguo;Yang, Guangcheng;Huang, Hui;Nie, Fude;Liu, Chenmin;Yang, Shihe;
10:6:2 Nanostructured copper oxide semiconductors: a perspective on materials, synthesis methods and applications
DOI:10.1039/c4tc00345d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:11 AU: Zoolfakar, Ahmad Sabirin;Rani, Rozina Abdul;Morfa, Anthony J.;O'Mullane, Anthony P.;Kalantar-Zadeh, Kourosh;
10:6:3 Driving force and growth mechanism for spontaneous oxide nanowire formation during the thermal oxidation of metals
DOI:10.1016/j.actamat.2010.12.052 JN:ACTA MATERIALIA PY:2011
TC:67 AU: Yuan, Lu;Wang, Yiqian;Mema, Rediola;Zhou, Guangwen;
10:6:4 Facile Fabrication and Enhanced Sensing Properties of Hierarchically Porous CuO Architectures
DOI:10.1021/am2013882 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:52 AU: Zhu, Guoxing;Xu, Huan;Xiao, Yunyun;Liu, Yuanjun;Yuan, Aihua;Shen, Xiaoping;
10:6:5 Facile large-scale synthesis of vertically aligned CuO nanowires on nickel foam: growth mechanism and remarkable electrochemical performance
DOI:10.1039/c3ta14767c JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:15 AU: Zhang, Qiaobao;Wang, Jiexi;Xu, Daguo;Wang, Zhixing;Li, Xinhai;Zhang, Kaili;
10:6:6 Copper oxide nanowires: a review of growth
DOI:10.1088/0957-4484/23/19/194001 JN:NANOTECHNOLOGY PY:2012
TC:47 AU: Filipic, G.;Cvelbar, U.;
10:6:7 Microwave, sonochemical and combustion synthesized CuO nanostructures and their electrical and bactericidal properties
DOI:10.1016/j.jallcom.2013.07.150 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Karunakaran, C.;Manikandan, G.;Gomathisankar, P.;
10:6:8 Controlled growth of copper oxide nanostructures by atmospheric pressure micro-afterglow
DOI:10.1016/j.jcrysgro.2014.08.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Altaweel, A.;Filipic, G.;Gries, T.;Belmonte, T.;
10:6:9 Hydrothermal synthesis of CuO micro-/nanostructures and their applications in the oxidative degradation of methylene blue and non-enzymatic sensing of glucose/H2O2
DOI:10.1016/j.jcis.2011.12.074 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:58 AU: Prathap, M. U. Anu;Kaur, Balwinder;Srivastava, Rajendra;
10:6:10 Copper oxide nanoflakes as highly sensitive and fast response self-sterilizing biosensors
DOI:10.1039/c1jm11813g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:33 AU: Akhavan, O.;Ghaderi, E.;
10:6:11 Highly oriented cupric oxide nanoknife arrays on flexible carbon fabric as high performing cold cathode emitter
DOI:10.1039/c3tc31972e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:9 AU: Das, Swati;Saha, Subhajit;Sen, Dipayan;Ghorai, Uttam Kumar;Banerjee, Diptonil;Chattopadhyay, Kalyan Kumar;
10:6:12 CuO/Cu(OH)(2) hierarchical nanostructures as bactericidal photocatalysts
DOI:10.1039/c0jm04364h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:33 AU: Akhavan, O.;Azimirad, R.;Safa, S.;Hasani, E.;
10:6:13 Facile synthesis, growth mechanism and reversible superhydrophobic and superhydrophilic properties of non-flaking CuO nanowires grown from porous copper substrates
DOI:10.1088/0957-4484/24/6/065602 JN:NANOTECHNOLOGY PY:2013
TC:19 AU: Zhang, Qiao Bao;Xu, Daguo;Hung, Tak Fu;Zhang, Kaili;
10:6:14 Conductometric chemical sensor based on individual CuO nanowires
DOI:10.1088/0957-4484/21/48/485502 JN:NANOTECHNOLOGY PY:2010
TC:47 AU: Li, Dongdong;Hu, Jun;Wu, Ruqian;Lu, Jia G.;
10:6:15 Fine tuning of the morphology of copper oxide nanostructures and their application in ambient degradation of methylene blue
DOI:10.1016/j.jcis.2010.11.022 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:46 AU: Yang, Mingqing;He, Junhui;
10:6:16 Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires
DOI:10.1088/0957-4484/24/26/265603 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: El Mel, A. A.;Buffiere, M.;Bouts, N.;Gautron, E.;Tessier, P. Y.;Henzler, K.;Guttmann, P.;Konstantinidis, S.;Bittencourt, C.;Snyders, R.;
10:6:17 The Role of Hierarchical Morphologies in the Superior Gas Sensing Performance of CuO-Based Chemiresistors
DOI:10.1002/adfm.201202332 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:46 AU: Volanti, Diogo P.;Felix, Anderson A.;Orlandi, Marcelo O.;Whitfield, George;Yang, Dae-Jin;Longo, Elson;Tuller, Harry L.;Varela, Jose A.;
10:6:18 Room-Temperature Ammonia Sensor Based on Cationic Surfactant-Assisted Nanocrystalline CuO
DOI:10.1021/am900914h JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:39 AU: Bedi, Ratish K.;Singh, Iqbal;
10:6:19 Green and facile synthesis of hierarchical cocoon shaped CuO hollow architectures
DOI:10.1016/j.matlet.2010.10.079 JN:MATERIALS LETTERS PY:2011
TC:29 AU: Deng, Chonghai;Hu, Hanmei;Zhu, Wenli;Han, Chengliang;Shao, Guoquan;
10:6:20 Growth of metal and metal oxide nanowires driven by the stress-induced migration
DOI:10.1063/1.4718436 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Chen, Mingji;Yue, Yumei;Ju, Yang;
10:6:21 Green synthesis of CuO nanoflakes from CuCO3 center dot Cu(OH)(2) powder and H2O2 aqueous solution
DOI:10.1016/j.powtec.2012.05.007 JN:POWDER TECHNOLOGY PY:2012
TC:6 AU: Wang, Tian Xi;Xu, Shao Hong;Yang, Feng Xia;
10:6:22 Template-Free Synthesis of Mesoporous CuO Dandelion Structures For Optoelectronic Applications
DOI:10.1021/am100197w JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:42 AU: Manna, Sujit;Das, Kajari;De, S. K.;
10:6:23 Modulating Gas Sensing Properties of CuO Nanowires through Creation of Discrete Nanosized p-n Junctions on Their Surfaces
DOI:10.1021/am300911z JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:33 AU: Mashock, Mark;Yu, Kehan;Cui, Shumao;Mao, Shun;Lu, Ganhua;Chen, Junhong;
10:6:24 Structure and growth mechanism of CuO plates obtained by microwave-hydrothermal without surfactants
DOI:10.1016/j.apt.2009.11.007 JN:ADVANCED POWDER TECHNOLOGY PY:2010
TC:42 AU: Moura, A. P.;Cavalcante, L. S.;Sczancoski, J. C.;Stroppa, D. G.;Paris, E. C.;Ramirez, A. J.;Varela, J. A.;Longo, E.;
10:6:25 Porous CuO superstructure: Precursor-mediated fabrication, gas sensing and photocatalytic properties
DOI:10.1016/j.jcis.2012.06.017 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:26 AU: Xu, Huan;Zhu, Guoxing;Zheng, Dan;Xi, Chunyan;Xu, Xiang;Shen, Xiaoping;
10:6:26 Syntheses and gas-sensing properties of CuO nanostructures by using [Cu(pbbt)Cl-2](2)center dot CH3OH as a precursor
DOI:10.1016/j.matlet.2010.03.010 JN:MATERIALS LETTERS PY:2010
TC:27 AU: Mu, Yajuan;Yang, Jie;Han, Shuang;Hou, Hongwei;Fan, Yaoting;
10:6:27 Structural, morphological, optical, and magnetic properties of Ni-doped CuO nanostructures prepared by a rapid microwave combustion method
DOI:10.1016/j.mssp.2013.09.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:6 AU: Basith, N. Mohamed;Vijaya, J. Judith;Kennedy, L. John;Bououdina, M.;
10:6:28 In Situ Synthesis of CuO and Cu Nanostructures with Promising Electrochemical and Wettability Properties
DOI:10.1002/smll.201302368 JN:SMALL PY:2014
TC:12 AU: Zhang, Qiaobao;Xu, Daguo;Zhou, Xiang;Wu, Xianwen;Zhang, Kaili;
10:6:29 Synthesis, growth mechanism and gas-sensing properties of large-scale CuO nanowires
DOI:10.1016/j.actamat.2010.07.008 JN:ACTA MATERIALIA PY:2010
TC:38 AU: Zhong, M. L.;Zeng, D. C.;Liu, Z. W.;Yu, H. Y.;Zhong, X. C.;Qiu, W. Q.;
10:6:30 Synthesis and optical properties of CuO nanostructures obtained via a novel thermal decomposition method
DOI:10.1016/j.jallcom.2011.06.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:20 AU: Al-Gaashani, R.;Radiman, S.;Tabet, N.;Daud, A. Razak;
10:6:31 Local and CMOS-compatible synthesis of CuO nanowires on a suspended microheater on a silicon substrate
DOI:10.1088/0957-4484/21/23/235602 JN:NANOTECHNOLOGY PY:2010
TC:29 AU: Zhang, Kaili;Yang, Yang;Pun, E. Y. B.;Shen, Ruiqi;
10:6:32 Room temperature synthesis of 2D CuO nanoleaves in aqueous solution
DOI:10.1088/0957-4484/22/11/115604 JN:NANOTECHNOLOGY PY:2011
TC:37 AU: Zhao, Yan;Zhao, Jingzhe;Li, Yunling;Ma, Dechong;Hou, Shengnan;Li, Linzhi;Hao, Xinli;Wang, Zichen;
10:6:33 Oxidative fabrication of patterned, large, non-flaking CuO nanowire arrays
DOI:10.1088/0957-4484/22/10/105605 JN:NANOTECHNOLOGY PY:2011
TC:17 AU: Mumm, F.;Sikorski, P.;
10:6:34 Ionic liquid-assisted hydrothermal synthesis of three-dimensional hierarchical CuO peachstone-like architectures
DOI:10.1016/j.apsusc.2009.10.022 JN:APPLIED SURFACE SCIENCE PY:2010
TC:22 AU: Xia, Jiexiang;Li, Huaming;Luo, Zhijun;Wang, Kun;Yin, Sheng;Yan, Yongsheng;
10:6:35 Large-scale synthesis of aligned Co3O4 nanowalls on nickel foam and their electrochemical performance for Li-ion batteries
DOI:10.1016/j.ceramint.2014.07.032 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Xiong, Lizhi;Teng, Yao;Wu, Yuxian;Wang, Jiajian;He, Zeqiang;
10:6:36 Tailoring CuO nanostructures for enhanced photocatalytic property
DOI:10.1016/j.jcis.2012.06.044 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:35 AU: Liu, Jing;Jin, Jun;Deng, Zhao;Huang, Shao-Zhuan;Hu, Zhi-Yi;Wang, Li;Wang, Chao;Chen, Li-Hua;Li, Yu;Van Tendeloo, G.;Su, Bao-Lian;
10:6:37 Size effects on the magnetic and optical properties of CuO nanoparticles
DOI:10.1007/s11051-010-0143-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:32 AU: Rehman, Shama;Mumtaz, A.;Hasanain, S. K.;
10:6:38 Ultrasound assisted template-free synthesis of Cu(OH)(2) and hierarchical CuO nanowires from Cu7Cl4(OH)(10)center dot H2O
DOI:10.1016/j.matlet.2010.01.078 JN:MATERIALS LETTERS PY:2010
TC:18 AU: Zhu, Lianjie;Chen, Yuntao;Zheng, Yiteng;Li, Naixuan;Zhao, Jiande;Sun, Youguang;
10:6:39 CuO nanowires prepared via a facile solution route and their photocatalytic property
DOI:10.1016/j.matlet.2011.12.077 JN:MATERIALS LETTERS PY:2012
TC:28 AU: Liu, Xueqin;Li, Zhen;Zhang, Qiang;Li, Fei;Kong, Tao;
10:6:40 Photocatalytic application of hollow CuO microspheres with hierarchical dandelion-like structures synthesized by a simple template free approach
DOI:10.1016/j.matlet.2013.12.095 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Rabbani, Mahboubeh;Rahimi, Rahmatollah;Bozorgpour, Mohammad;Shokraiyan, Javad;Moghaddam, Samaneh Safalou;
10:6:41 Solvothermal synthesis and sensing properties of meso-macroporous hierarchical CuO microspheres composed of nanosheets
DOI:10.1016/j.matchemphys.2013.02.004 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Wang, Tao;Xiao, Qi;
10:6:42 The origin of hematite nanowire growth during the thermal oxidation of iron
DOI:10.1016/j.mseb.2011.12.034 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:19 AU: Yuan, Lu;Wang, Yiqian;Cai, Rongsheng;Jiang, Qike;Wang, Jianbo;Li, Boquan;Sharma, Anju;Zhou, Guangwen;
10:6:43 Formation of CuO nanowires by thermal annealing copper film deposited on Ti/Si substrate
DOI:10.1016/j.apsusc.2011.08.031 JN:APPLIED SURFACE SCIENCE PY:2011
TC:11 AU: Wang, Yao;Shen, Ruiqi;Jin, Xiaoyun;Zhu, Peng;Ye, Yinghua;Hu, Yan;
10:6:44 One-step self-assembled synthesis of CuO with tunable hierarchical structures and their electrocatalytic properties for nitrite oxidation in aqueous media
DOI:10.1016/j.jcis.2012.12.071 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:2 AU: Zhao, Youcheng;Song, Xinyu;Yin, Zhilei;Song, Qisheng;
10:6:45 Hydrogen peroxide-assisted hydrothermal synthesis of hierarchical CuO flower-like nanostructures
DOI:10.1016/j.matlet.2011.04.021 JN:MATERIALS LETTERS PY:2011
TC:12 AU: Cheng, Zhipeng;Xu, Jiming;Zhong, Hui;Chu, Xiaozhong;Song, Juan;
10:6:46 Au nanoparticles decorated CuO nanowire arrays with enhanced photocatalytic properties
DOI:10.1016/j.matlet.2013.06.081 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Yu, Yanlong;Zhao, Yanyan;Sun, Hongyu;Ahmad, Mashkoor;
10:6:47 Formation of hybrid structures: copper oxide nanocrystals templated on ultralong copper nanowires for open network sensing at room temperature
DOI:10.1088/0957-4484/22/23/235701 JN:NANOTECHNOLOGY PY:2011
TC:19 AU: Kevin, M.;Ong, W. L.;Lee, G. H.;Ho, G. W.;
10:6:48 Plasma-Enhanced Catalytic CuO Nanowires for CO Oxidation
DOI:10.1021/nl1034545 JN:NANO LETTERS PY:2010
TC:57 AU: Feng, Yunzhe;Zheng, Xiaolin;
10:6:49 Cross-sectional characterization of cupric oxide nanowires grown by thermal oxidation of copper foils
DOI:10.1016/j.apsusc.2010.06.034 JN:APPLIED SURFACE SCIENCE PY:2010
TC:16 AU: Liang, JianBo;Kishi, Naoki;Soga, Tetsuo;Jimbo, Takashi;
10:6:50 CuO nanoparticles: Synthesis, characterization, optical properties and interaction with amino acids
DOI:10.1016/j.apsusc.2011.11.025 JN:APPLIED SURFACE SCIENCE PY:2012
TC:42 AU: El-Trass, A.;ElShamy, H.;El-Mehasseb, I.;El-Kemary, M.;
10:6:51 Controllable fabrication of CuO nanostructure by hydrothermal method and its properties
DOI:10.1016/j.apsusc.2014.05.116 JN:APPLIED SURFACE SCIENCE PY:2014
TC:12 AU: Jiang, Tingting;Wang, Yongqian;Meng, Dawei;Wu, Xiuling;Wang, Junxia;Chen, Jieyu;
10:6:52 Large-scale and green synthesis of octahedral flower-like cupric oxide nanocrystals with enhanced photochemical properties
DOI:10.1016/j.apsusc.2014.07.113 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Li, Shi-Kuo;Pan, Yu-Yi;Wu, Mi;Huang, Fang-Zhi;Li, Chuan-Hao;Shen, Yu-Hua;
10:6:53 Ultralong Cu(OH)(2) and CuO nanowire bundles: PEG200-directed crystal growth for enhanced photocatalytic performance
DOI:10.1016/j.jcis.2010.04.052 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:31 AU: Li, Yu;Yang, Xiao-Yu;Rooke, Joanna;van Tendeloo, Guastaaf;Su, Bao-Lian;
10:6:54 Selective synthesis of clinoatacamite Cu-2(OH)(3)Cl and tenorite CuO nanoparticles by pH control
DOI:10.1007/s11051-014-2562-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Engelbrekt, Christian;Malcho, Phillip;Andersen, Jonas;Zhang, Lijuan;Stahl, Kenny;Li, Bin;Hu, Jun;Zhang, Jingdong;
10:6:55 Hydrothermal synthesis of CuO/functionalized graphene nanocomposites for dye degradation
DOI:10.1016/j.matlet.2012.10.015 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Yusoff, N.;Huang, N. M.;Muhamad, M. R.;Kumar, S. V.;Lim, H. N.;Harrison, I.;
10:6:56 Microemulsion-based synthesis of hierarchical 3D flowerlike CuO nanostructures
DOI:10.1016/j.matlet.2013.04.067 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Chu, De-Qing;Mao, Bao-Guang;Wang, Li-Min;
10:6:57 Facile dicyandiamide-mediated fabrication of well-defined CuO hollow microspheres and their catalytic application
DOI:10.1016/j.matchemphys.2009.11.005 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:25 AU: Yang, Shengyang;Wang, Caifeng;Chen, Li;Chen, Su;
10:6:58 A Chemically-Responsive Nanojunction within a Silver Nanowire
DOI:10.1021/nl300427w JN:NANO LETTERS PY:2012
TC:8 AU: Xing, Wendong;Hu, Jun;Kung, Sheng-Chin;Donavan, Keith C.;Yan, Wenbo;Wu, Ruqian;Penner, Reginald M.;
10:6:59 Stress-induced growth of well-aligned Cu2O nanowire arrays and their photovoltaic effect
DOI:10.1016/j.scriptamat.2011.09.041 JN:SCRIPTA MATERIALIA PY:2012
TC:22 AU: Yue, Yumei;Chen, Mingji;Ju, Yang;Zhang, Lan;
10:6:60 Superhydrophilicity to superhydrophobicity transition of CuO nanowire films
DOI:10.1063/1.3360847 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Chang, Feng-Ming;Cheng, Shao-Liang;Hong, Siang-Jie;Sheng, Yu-Jane;Tsao, Heng-Kwong;
10:6:61 Photoluminescence properties of a single tapered CuO nanowire
DOI:10.1016/j.apsusc.2010.01.007 JN:APPLIED SURFACE SCIENCE PY:2010
TC:18 AU: Huang, C. -Y.;Chatterjee, A.;Liu, S. B.;Wu, S. Y.;Cheng, C. -L.;
10:6:62 Facile synthesis of CuO hollow nanospheres assembled by nanoparticles and their electrochemical performance
DOI:10.1016/j.apsusc.2011.08.127 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Kong, Mei;Zhang, Weixin;Yang, Zeheng;Weng, Shaoying;Chen, Zhangxian;
10:6:63 CuO nanobelts synthesized by a template-free hydrothermal approach with optical and magnetic characteristics
DOI:10.1016/j.ceramint.2013.07.129 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Mohamed, Reda M.;Harraz, Farid A.;Shawky, Ahmed;
10:6:64 Formation of CuO nanorods and their bundles by an electrochemical dissolution and deposition process
DOI:10.1016/j.jallcom.2010.12.180 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:16 AU: Toboonsung, Buppachat;Singjai, Pisith;
10:6:65 Preparation, characterization and catalytic property of CuO nano/microspheres via thermal decomposition of cathode-plasma generating Cu-2(OH)(3)NO3 nano/microspheres
DOI:10.1016/j.jcis.2011.01.102 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:12 AU: Zhang, Zhi-Kun;Guo, Deng-Zhu;Zhang, Geng-Min;
10:6:66 Tailoring the structure of metal oxide nanostructures towards enhanced sensing properties for environmental applications
DOI:10.1016/j.jcis.2011.09.061 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:7 AU: Yang, Mingqing;He, Junhui;
10:6:67 The growth of hematite nanobelts and nanowires-tune the shape via oxygen gas pressure
DOI:10.1557/jmr.2012.19 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:8 AU: Yuan, Lu;Jiang, Qike;Wang, Jianbo;Zhou, Guangwen;
10:6:68 Field emission properties of one-dimensional single CuO nanoneedle by in situ microscopy
DOI:10.1007/s10853-010-4433-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:18 AU: Liu, Yueli;Zhong, Lei;Peng, Zhuoyin;Song, Yanbao;Chen, Wen;
10:6:69 Ultrasound assisted quick synthesis of square-brick-like porous CuO and optical properties
DOI:10.1016/j.materresbull.2012.05.034 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Qiu, Mo;Zhu, Lianjie;Zhang, Tongtong;Li, Hongbin;Sun, Youguang;Liu, Kun;
10:6:70 Microwave hydrothermal disassembly for evolution from CuO dendrites to nanosheets and their applications in catalysis and photo-catalysis
DOI:10.1016/j.powtec.2014.05.012 JN:POWDER TECHNOLOGY PY:2014
TC:3 AU: Yang, Chao;Wang, Jide;Xiao, Feng;Su, Xintai;
10:6:71 Preparation of Cu2O nanowires by thermal oxidation-plasma reduction method
DOI:10.1007/s00339-012-6859-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Chen, Meng-Jie;Wu, Chia-Ying;Kuo, Yi-Ming;Chen, Hong-Ying;Tsai, Cheng-Hsien;
10:6:72 Charge transport in single CuO nanowires
DOI:10.1063/1.4900966 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wu, Junnan;Yin, Bo;Wu, Fei;Myung, Yoon;Banerjee, Parag;
10:6:73 CuO Nanoparticles from the Strongly Hydrated Ionic Liquid Precursor (ILP) Tetrabutylammonium Hydroxide: Evaluation of the Ethanol Sensing Activity
DOI:10.1021/am201427q JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:17 AU: Taubert, Andreas;Stange, Franziska;Li, Zhonghao;Junginger, Mathias;Guenter, Christina;Neumann, Mike;Friedrich, Alwin;
10:6:74 Antimicrobial activities of CuO films deposited on Cu foils by solution chemistry
DOI:10.1016/j.apsusc.2013.04.027 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Ekthammathat, Nuengruethai;Thongtem, Titipun;Thongtem, Somchai;
10:6:75 Preparation and characterization of CuO nanoparticles with different morphology through a simple quick-precipitation method in DMAC-water mixed solvent
DOI:10.1016/j.jallcom.2010.05.062 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Wu, Rujun;Ma, Zhenye;Gu, Zhenggui;Yang, Yan;
10:6:76 One dimensional CuO nanocrystals synthesis by electrical explosion: A study on structural, optical and electronic properties
DOI:10.1016/j.jallcom.2013.10.014 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Krishnan, Shutesh;Haseeb, A. S. M. A.;Johan, Mohd Rafie;
10:6:77 Enhanced ferromagnetism in CuO nanowires on the top of CuO nanograins
DOI:10.1063/1.4829284 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Souza, J. A.;Criado, D.;Zuniga, A.;Miranda, V. N.;Ramirez, F. E. N.;Masunaga, S. H.;Jardim, R. F.;
10:6:78 Crystal distortion of monoclinic hen egg-white lysozyme crystals using X-ray digital topography
DOI:10.1016/j.jcrysgro.2013.12.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Wako, Kei;Fujii, Daiki;Tsukashima, Shiro;Kishi, Takeharu;Tachibana, Masaru;Kojima, Kenichi;
10:6:79 Synthesis and microwave modification of CuO nanoparticles: Crystallinity and morphological variations, catalysis, and gas sensing
DOI:10.1016/j.jcis.2014.08.044 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:4 AU: Yang, Chao;Xiao, Feng;Wang, Jide;Su, Xintai;
10:6:80 Ultrasound assisted shape regulation of CuO nanorods in ionic liquids and their use as energy efficient lubricant additives
DOI:10.1039/c3ta10248c JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:11 AU: Gusain, Rashi;Khatri, Om P.;
10:6:81 Facile preparation and optoelectronic properties of CuO nanowires for violet light sensing
DOI:10.1016/j.matlet.2013.11.119 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Ko, Yeong Hwan;Nagaraju, Goli;Lee, Soo Hyun;Yu, Jae Su;
10:6:82 The wavelength dependent photovoltaic effects caused by two different mechanisms in carbon nanotube film/CuO nanowire array heterodimensional contacts
DOI:10.1063/1.4730433 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Xu, Jia;Sun, Jia-Lin;Wei, Jinquan;Xu, Jinliang;
10:6:83 Characterization and gas sensing properties of CuO synthesized by DC directly applying voltage
DOI:10.1016/j.apsusc.2014.06.037 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Klinbumrung, Arrak;Thongtem, Titipun;Thongtem, Somchai;
10:6:84 Manipulating aggregation of CuO nanoparticles: Correlation between morphology and optical properties
DOI:10.1016/j.jallcom.2014.05.171 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Ganga, B. G.;Santhosh, P. N.;
10:6:85 Controlled facile synthesis, growth mechanism, and exothermic properties of large-area Co3O4 nanowalls and nanowires on silicon substrates
DOI:10.1063/1.4731798 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Qiao, Zhiqiang;Xu, Daguo;Nie, Fude;Yang, Guangcheng;Zhang, Kaili;
10:6:86 Spontaneous ZnO nanowire formation during oxidation of Cu-Zn alloy
DOI:10.1063/1.4812569 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Yuan, Lu;Wang, Chao;Cai, Rongsheng;Wang, Yiqian;Zhou, Guangwen;
10:6:87 CdTe nanosheets and pine-like hyperbranched nanostructures prepared by a modified film technique Catalyst-assisted vacuum thermal evaporation
DOI:10.1016/j.matlet.2010.09.048 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Yang, Linyu;Wu, R.;Li, J.;Sun, Y. F.;Jian, J. K.;
10:6:88 Facile synthesis and lithium storage performance of hollow CuO microspheres
DOI:10.1016/j.matlet.2014.05.034 JN:MATERIALS LETTERS PY:2014
TC:5 AU: He, Simin;Li, Jinshan;Wang, Jun;Yang, Guangcheng;Qiao, Zhiqiang;
10:6:89 Transition metal oxide nanowires synthesized by heating metal substrates
DOI:10.1016/j.materresbull.2011.06.039 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:7 AU: Yan, Hui;Sun, Yi;He, Lin;Nie, Jia-Cai;
10:6:90 Synthesis, characterization, electrical and catalytic properties of CuO nanowires
DOI:10.1016/j.materresbull.2013.02.021 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Yan, Hui;Liu, Xiangwen;Xu, Rui;Lv, Ping;Zhao, Peihe;
10:6:91 Growth of Cu2O flower/grass-like nanoarchitectures and their photovoltaic effects
DOI:10.1016/j.apsusc.2014.03.182 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Hu, Lijiao;Ju, Yang;Chen, Mingji;Hosoi, Atsushi;Arai, Shigeo;
10:6:92 Synthesis of aligned copper oxide nanorod arrays by a seed mediated hydrothermal method
DOI:10.1016/j.jallcom.2011.09.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:15 AU: Liu, Liqing;Hong, Kunquan;Hu, Tengteng;Xu, Mingxiang;
10:6:93 Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method
DOI:10.1016/j.jcrysgro.2013.09.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Vu Xuan Hien;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo;
10:6:94 Preparation of PVP-coated copper oxide nanosheets as antibacterial and antifungal agents
DOI:10.1557/jmr.2013.316 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:1 AU: Shahmiri, Mahdi;Ibrahim, Nor Azowa;Shayesteh, Fatemeh;Asim, Nilofar;Motallebi, Nabi;
10:6:95 Synthesis and characterization of mono sized CuO nanoparticles
DOI:10.1016/j.matlet.2012.04.148 JN:MATERIALS LETTERS PY:2012
TC:14 AU: Sahooli, M.;Sabbaghi, S.;Saboori, R.;
10:6:96 A facile room temperature solution-phase route to synthesize CuO nanowires with enhanced photocatalytic performance
DOI:10.1016/j.matlet.2012.01.123 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Wang, Lijuan;Zhou, Qing;Zhang, Guling;Liang, Yujie;Wang, Baoshun;Zhang, Weiwei;Lei, Bo;Wang, Wenzhong;
10:6:97 One-step green synthesis of hierarchical hydrangea shaped Cu2O-CuO composite
DOI:10.1016/j.matlet.2013.09.082 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Yang, Renchun;Tang, Dingxing;Tao, Tingxian;Ren, Yiming;Zhang, Xu;Xu, Maodong;Wang, Chong;
10:6:98 Low-temperature solution synthesis of CuO nanorods with thin diameter
DOI:10.1016/j.matlet.2012.11.055 JN:MATERIALS LETTERS PY:2013
TC:13 AU: Chen, Huiyu;Zhao, Guizhe;Liu, Yaqing;
10:6:99 Synthesis and catalytic properties of novel peanut shaped CuO hollow architectures
DOI:10.1016/j.matlet.2014.06.011 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Yin, Jingzhou;Sheng, Zhenhuan;Zhang, Weiguang;Zhang, Yu;Zhong, Hui;Li, Rongqing;Jiang, Zhengjing;Wang, Xinfeng;
10:6:100 Ultrasound-assisted synthesis of CuO nanostructures templated by cotton fibers
DOI:10.1016/j.materresbull.2012.08.020 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:4 AU: Zou, Yunling;Li, Yan;Guo, Ying;Zhou, Qingjun;An, Dongmin;
10:6:101 Hydrothermal synthesis and magnetic properties of CuO hollow microspheres
DOI:10.1016/j.materresbull.2013.08.052 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Zhao, J. G.;Yin, J. Z.;Yang, M.;
10:6:102 CuO based inorganic-organic hybrid nanowires: a new type of highly sensitive humidity sensor
DOI:10.1088/0957-4484/21/41/415501 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Yuan, Conghui;Xu, Yiting;Deng, Yuanming;Jiang, Nina;He, Ning;Dai, Lizong;
10:6:103 Microwave-assisted hydrothermal synthesis of sphere-like C/CuO and CuO nanocrystals and improved performance as anode materials for lithium-ion batteries
DOI:10.1016/j.powtec.2013.02.042 JN:POWDER TECHNOLOGY PY:2013
TC:4 AU: Ji, Hongmei;Miao, Xiaowei;Wang, Lu;Qian, Bin;Yang, Gang;
10:6:104 Microwave-assistant synthesis of ordered CuO micro-structures on Cu substrate
DOI:10.1016/j.apsusc.2010.06.049 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Min, YuLin;Wang, Tao;Chen, YouCun;
10:6:105 Copper (II) oxide nanowires for p-type conductometric NH3 sensing
DOI:10.1016/j.apsusc.2014.05.038 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Shao, F.;Hernandez-Ramirez, F.;Prades, J. D.;Fabrega, C.;Andreu, T.;Morante, J. R.;
10:6:106 Green sonochemical synthesis of cupric and cuprous oxides nanoparticles and their optical properties
DOI:10.1016/j.ceramint.2013.04.055 JN:CERAMICS INTERNATIONAL PY:2013
TC:5 AU: Shui, Anze;Zhu, Wenli;Xu, Linfeng;Qin, Dong;Wang, Yanmin;
10:6:107 Photocatalytic properties of different morphologies of CuO for the degradation of Congo red organic dye
DOI:10.1016/j.ceramint.2014.03.132 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Sadollahkhani, Azar;Ibupoto, Zafar Hussain;Elhag, Sarni;Nur, Omer;Willander, Magnus;
10:6:108 Effect of electric field on CuO nanoneedle growth during thermal and its growth mechanism
DOI:10.1063/1.3460635 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Li, Xiaozhu;Zhang, Jun;Yuan, Yanwen;Liao, Lingmin;Pan, Chunxu;
10:6:109 Methane conversion in surface- and volume-type dielectric barrier discharges generated in the presence of metal-mesh electrodes
DOI:10.1063/1.4896359 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kobayashi, Kazunobu;Kulinich, S. A.;Ito, Tsuyohito;
10:6:110 Solution-processable carboxylate-capped CuO nanoparticles obtained by a simple solventless method
DOI:10.1007/s11051-012-1053-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:3 AU: Estruga, Marc;Roig, Anna;Domingo, Concepcion;Ayllon, Jose A.;
10:6:111 Fabrication of gated CuO nanowire field emitter arrays for application in field emission display
DOI:10.1116/1.3428544 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:22 AU: Zhan, R. Z.;Chen, Jun;Deng, S. Z.;Xu, N. S.;
10:6:112 Simple and rapid preparation of CuO nanowires and their optical properties
DOI:10.1016/j.matlet.2013.06.101 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Ma, Chunyan;Zhu, Lianjie;Chen, Sifeng;Zhao, Yanxing;
10:6:113 Template-free solvothermal synthesis of copper oxide nanorods
DOI:10.1016/j.mssp.2014.05.045 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Gopalakrishnan, M.;Jeevaraj, A. Kingson Solomon;
10:6:114 CTAB assisted growth and characterization of nanocrystalline CuO films by ultrasonic spray pyrolysis technique
DOI:10.1016/j.apsusc.2011.06.061 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Singh, Iqbal;Kaur, Gursharan;Bedi, R. K.;
10:6:115 Synthesis and characterization of CuO at nanoscale
DOI:10.1016/j.apsusc.2014.04.126 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Bozkurt, Gamze;Bayrakceken, Ayse;Ozer, A. Kadir;
10:6:116 Field emission from alpha-Fe2O3 nanoflakes: Effect of vacuum pressure, gas adsorption and in-situ thermal treatment
DOI:10.1016/j.apsusc.2013.11.160 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Wu, J. Q.;Deng, S. Z.;Xu, N. S.;Chen, Jun;
10:6:117 Study of field emission, electrical transport, and their correlation of individual single CuO nanowires
DOI:10.1063/1.3536478 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Shao, PengRui;Deng, ShaoZhi;Chen, Jun;Chen, Jian;Xu, NingSheng;
10:6:118 Size-dependent shifts of the Neel temperature and optical band-gap in NiO nanoparticles
DOI:10.1063/1.4838915 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Thota, Subhash;Shim, J. H.;Seehra, M. S.;
10:6:119 Electrochemical fabrication of Cu(OH)(2) and CuO nanostructures and their catalytic property
DOI:10.1016/j.jcrysgro.2011.05.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Ming, Hai;Pan, Keming;Liu, Yang;Li, Haitao;He, Xiaodie;Ming, Jun;Ma, Zheng;Kang, Zhenhui;
10:6:120 Ultrasonochemical-Assisted Synthesis of CuO Nanorods with High Hydrogen Storage Ability
DOI:10.1155/2011/439162 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:6 AU: Xiao, Gang;Gao, Peng;Wang, Longqiang;Chen, Yujin;Wang, Ying;Zhang, Guoli;
10:6:121 The Synthesis of Highly Aligned Cupric Oxide Nanowires by Heating Copper Foil
DOI:10.1155/2011/268508 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:2 AU: Liang, Jianbo;Kishi, Naoki;Soga, Tetsuo;Jimbo, Takashi;
10:6:122 Synthesis, Characterization, and Antimicrobial Activity of Copper Oxide Nanoparticles
DOI:10.1155/2014/637858 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:4 AU: Ahamed, Maqusood;Alhadlaq, Hisham A.;Khan, M. A. Majeed;Karuppiah, Ponmurugan;Al-Dhabi, Naif A.;
10:6:123 Effects of aging temperature on the size and morphology of Cu(OH)(2) and CuO nanoparticles
DOI:10.1007/s11051-014-2584-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Kameyama, N.;Senna, M.;
10:6:124 Preparation and characterization of nanocrystalline CuO powders with the different surfactants and complexing agent mediated precipitation method
DOI:10.1016/j.materresbull.2014.05.002 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Rajendran, V.;Gajendiran, J.;
10:6:125 Preparation and ethanol sensing properties of flower-like cupric oxide hierarchical nanorods
DOI:10.1016/j.mssp.2014.03.052 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Nguyen Hoang Hung;Nguyen Dang Thanh;Nguyen Huu Lam;Nguyen Dac Dien;Nguyen Duc Chien;Dang Duc Vuong;
10:6:126 Synthesis of porous and nanostructured particles of CuO via a copper oxalate route
DOI:10.1016/j.powtec.2010.08.044 JN:POWDER TECHNOLOGY PY:2011
TC:11 AU: Aimable, A.;Puentes, A. Torres;Bowen, P.;
10:6:127 Low-Temperature Remediation of NO Catalyzed by Interleaved CuO Nanoplates
DOI:10.1002/adma.201306055 JN:ADVANCED MATERIALS PY:2014
TC:9 AU: Auxilia, Francis Malar;Ishihara, Shinsuke;Mandal, Saikat;Tanabe, Toyokazu;Saravanan, Govindachetty;Ramesh, Gubbala V.;Umezawa, Naoto;Hara, Toru;Xu, Ya;Hishita, Shunichi;Yamauchi, Yusuke;Dakshanamoorthy, Arivuoli;Hill, Jonathan P.;Ariga, Katsuhiko;Abe, Hideki;
10:6:128 Low temperature preparation of CuO nanospheres and urchin-shaped structures via hydrothermal route
DOI:10.1016/j.jallcom.2014.04.170 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Khan, Rizwan;Vaseem, Mohammad;Jang, Lee-Woon;Yun, Jin-Hyeon;Hahn, Yoon-Bong;Lee, In-Hwan;
10:6:129 Single-crystalline CuO nanowire growth and its electrode-dependent resistive switching characteristics
DOI:10.1063/1.4816794 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kim, Deok-kee;Shin, Jeong Ho;Shin, Ho Sun;Song, Jae Yong;
10:6:130 Formation of modulated structures in single-crystalline hexagonal alpha-Fe2O3 nanowires
DOI:10.1007/s11051-012-1073-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:2 AU: Cai, R. S.;Li, T.;Wang, Y. Q.;Wang, C.;Yuan, L.;Zhou, G. W.;
10:6:131 Growth of copper microflowers assisted by electromigration under a low current density and subsequent stress-induced migration
DOI:10.1016/j.matlet.2012.04.047 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Zhao, Xu;Saka, Masumi;
10:6:132 Synthesis of cupric oxide nanowires on spherical surface by thermal oxidation method
DOI:10.1016/j.matlet.2013.01.056 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Li, Xuyang;Liang, Jianbo;Kishi, Naoki;Soga, Tetsuo;
10:6:133 Investigation of thermal properties of CuO nanoparticles on the ethylene glycol-water mixture
DOI:10.1016/j.matlet.2012.11.097 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Sahooli, M.;Sabbaghi, S.;
10:6:134 Controllable synthesis of Ag-CuO composite nanosheets with enhanced photocatalytic property
DOI:10.1016/j.matlet.2014.01.026 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Yang, Jianbo;Li, Zhen;Zhao, Wen;Zhao, Caixin;Wang, Yang;Liu, Xueqin;
10:6:135 Spontaneous self-organization of Cu2O/CuO core-shell nanowires from copper nanoparticles
DOI:10.1088/0957-4484/21/4/045603 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Ji, Jhong-Yi;Shih, Po-Hsun;Yang, Chun Chuen;Chan, Ting Shan;Ma, Yuan-Ron;Wu, Sheng Yun;
10:6:136 Hydrothermal growth of single crystals of the quantum magnets: Clinoatacamite, paratacamite, and herbertsmithite
DOI:10.1063/1.3562010 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Chu, Shaoyan;Mueller, Peter;Nocera, Daniel G.;Lee, Young S.;
10:6:137 Characterization of CuO(111)/MgO(100) films grown under two different PLD backgrounds
DOI:10.1016/j.apsusc.2013.02.051 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Kawwam, M.;Alharbi, F. H.;Kayed, T.;Aldwayyan, A.;Alyamani, A.;Tabet, N.;Lebbou, K.;
10:6:138 Low dimensional CuO nanocomposites synthesis by pulsed wire explosion and their crystal growth mechanism
DOI:10.1016/j.ceramint.2014.02.086 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Krishnan, Shutesh;Haseeb, A. S. M. A.;Johan, Mohd Rafie;
10:6:139 One dimensional CuO nanocrystals synthesis by electrical explosion: A study on structural, optical and electronic properties (vol 586, pg 360, 2014)
DOI:10.1016/j.jallcom.2013.12.213 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Krishnan, Shutesh;Haseeb, A. S. M. A.;Johan, Mohd Rafie;
10:6:140 Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach
DOI:10.1063/1.3284941 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Seo, D. H.;Rider, A. E.;Arulsamy, A. Das;Levchenko, I.;Ostrikov, K.;
10:6:141 Characterization of dislocations in monoclinic hen egg-white lysozyme crystals by synchrotron monochromatic-beam X-ray topography
DOI:10.1016/j.jcrysgro.2010.11.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Sawaura, Takuya;Fujii, Daiki;Shen, Mengyuan;Yamamoto, Yu;Wako, Kei;Kojima, Kenichi;Tachibana, Masaru;
10:6:142 The Influence of Atmosphere on Electrical Property of Copper Oxide Nanoparticles
DOI:10.1155/2014/461269 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Chen, Minghan;Zhu, Huichao;Li, Xiaogan;Yu, Jun;Cai, Haitao;Quan, Xiaotong;Wang, Kaili;Zhang, Jiaqi;
10:6:143 Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection
DOI:10.1116/1.3276429 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Plis, E.;Khoshakhlagh, A.;Myers, S.;Kim, H. S.;Gautam, N.;Sharma, Y. D.;Krishna, S.;Lee, S. J.;Noh, S. K.;
10:6:144 Synthesis and antioxidant activity of cupric oxide nanoparticles accessed via low-temperature solid state thermal decomposition of bis(dimethylglyoximato)copper(II) complex
DOI:10.1016/j.matlet.2014.02.097 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Purkayastha, Debraj Dhar;Das, Nirmalendu;Bhattacharjee, Chira R.;
10:6:145 Template-free hydrothermal method for the synthesis of multi-walled CuO nanotubes
DOI:10.1016/j.matlet.2014.05.059 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Ipeksac, Tugba;Kaya, Figen;Kaya, Cengiz;
10:6:146 Conversion of copper (II)-Bis(2-Thio-6-Picoline-N-Oxide) bulk chelate: [a] to nanochelate by micelle breaking route [b] to nano CuO by chelate thermolysis using designed experiments
DOI:10.1016/j.materresbull.2012.11.083 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:0 AU: Edrissi, M.;Roohollahi, H.;
10:7:1 Enhancing Sensitivity of a Single ZnO Micro-/Nanowire Photodetector by Piezo-phototronic Effect
DOI:10.1021/nn1022878 JN:ACS NANO PY:2010
TC:124 AU: Yang, Qing;Guo, Xin;Wang, Wenhui;Zhang, Yan;Xu, Sheng;Lien, Der Hsien;Wang, Zhong Lin;
10:7:2 Progress in Piezotronics and Piezo-Phototronics
DOI:10.1002/adma.201104365 JN:ADVANCED MATERIALS PY:2012
TC:115 AU: Wang, Zhong Lin;
10:7:3 Enhancing Light Emission of ZnO Microwire-Based Diodes by Piezo-Phototronic Effect
DOI:10.1021/nl202619d JN:NANO LETTERS PY:2011
TC:107 AU: Yang, Qing;Wang, Wenhui;Xu, Sheng;Wang, Zhong Lin;
10:7:4 Fundamental Theory of Piezotronics
DOI:10.1002/adma.201100906 JN:ADVANCED MATERIALS PY:2011
TC:98 AU: Zhang, Yan;Liu, Ying;Wang, Zhong Lin;
10:7:5 Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays
DOI:10.1021/nl1014298 JN:NANO LETTERS PY:2010
TC:84 AU: Wei, Yaguang;Wu, Wenzhuo;Guo, Rui;Yuan, Dajun;Das, Suman;Wang, Zhong Lin;
10:7:6 Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects
DOI:10.1021/nn901805g JN:ACS NANO PY:2010
TC:73 AU: Hu, Youfan;Chang, Yanling;Fei, Peng;Snyder, Robert L.;Wang, Zhong Lin;
10:7:7 Piezotronic Effect on the Output Voltage of P3HT/ZnO Micro/Nanowire Heterojunction Solar Cells
DOI:10.1021/nl202648p JN:NANO LETTERS PY:2011
TC:46 AU: Yang, Ya;Guo, Wenxi;Zhang, Yan;Ding, Yong;Wang, Xue;Wang, Zhong Lin;
10:7:8 From nanogenerators to piezotronics-A decade-long study of ZnO nanostructures
DOI:10.1557/mrs.2012.186 JN:MRS BULLETIN PY:2012
TC:47 AU: Wang, Zhong Lin;
10:7:9 Strain-Gated Piezotronic Logic Nanodevices
DOI:10.1002/adma.201001925 JN:ADVANCED MATERIALS PY:2010
TC:62 AU: Wu, Wenzhuo;Wei, Yaguang;Wang, Zhong Lin;
10:7:10 Optimizing the Power Output of a ZnO Photocell by Piezopotential
DOI:10.1021/nn1010045 JN:ACS NANO PY:2010
TC:48 AU: Hu, Youfan;Zhang, Yan;Chang, Yanling;Snyder, Robert L.;Wang, Zhong Lin;
10:7:11 Self-Powered UV Photosensor Based on PEDOT:PSS/ZnO Micro/Nanowire with Strain-Modulated Photoresponse
DOI:10.1021/am4008775 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:14 AU: Lin, Pei;Yan, Xiaoqin;Zhang, Zheng;Shen, Yanwei;Zhao, Yanguang;Bai, Zhiming;Zhang, Yue;
10:7:12 Photovoltaics with Piezoelectric Core-Shell Nanowires
DOI:10.1021/nl9040934 JN:NANO LETTERS PY:2010
TC:50 AU: Boxberg, Fredrik;Sondergaard, Niels;Xu, H. Q.;
10:7:13 Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories
DOI:10.1021/nl201074a JN:NANO LETTERS PY:2011
TC:47 AU: Wu, Wenzhuo;Wang, Zhong Lin;
10:7:14 Piezotronic Effect in Solution-Grown p-Type ZnO Nanowires and Films
DOI:10.1021/nl400792w JN:NANO LETTERS PY:2013
TC:29 AU: Pradel, Ken C.;Wu, Wenzhuo;Zhou, Yusheng;Wen, Xiaonan;Ding, Yong;Wang, Zhong Lin;
10:7:15 Interface Engineering by Piezoelectric Potential in ZnO-Based Photoelectrochemical Anode
DOI:10.1021/nl203729j JN:NANO LETTERS PY:2011
TC:36 AU: Shi, Jian;Starr, Matthew B.;Xiang, Hua;Hara, Yukihiro;Anderson, Marc A.;Seo, Jung-Hun;Ma, Zhenqiang;Wang, Xudong;
10:7:16 Piezo-phototronic Effect Enhanced Visible and Ultraviolet Photodetection Using a ZnO-CdS Core-Shell Micro/nanowire
DOI:10.1021/nn3035765 JN:ACS NANO PY:2012
TC:45 AU: Zhang, Fang;Ding, Yong;Zhang, Yan;Zhang, Xiaoling;Wang, Zhong Lin;
10:7:17 Piezo-phototronic Effect Enhanced Visible/UV Photodetector of a Carbon-Fiber/ZnO-CdS Double-Shell Microwire
DOI:10.1021/nn401232k JN:ACS NANO PY:2013
TC:35 AU: Zhang, Fang;Niu, Simiao;Guo, Wenxi;Zhu, Guang;Liu, Ying;Zhang, Xiaoling;Wang, Zhong Lin;
10:7:18 Enhanced Cu2S/CdS Coaxial Nanowire Solar Cells by Piezo-Phototronic Effect
DOI:10.1021/nl3014082 JN:NANO LETTERS PY:2012
TC:40 AU: Pan, Caofeng;Niu, Simiao;Ding, Yong;Dong, Lin;Yu, Ruomeng;Liu, Ying;Zhu, Guang;Wang, Zhong Lin;
10:7:19 Largely Enhanced Efficiency in ZnO Nanowire/p-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode by Piezo-Phototronic Effect
DOI:10.1021/nl304163n JN:NANO LETTERS PY:2013
TC:58 AU: Yang, Qing;Liu, Ying;Pan, Caofeng;Chen, Jun;Wen, Xiaonan;Wang, Zhong Lin;
10:7:20 Nanowire Piezo-phototronic Photodetector: Theory and Experimental Design
DOI:10.1002/adma.201104333 JN:ADVANCED MATERIALS PY:2012
TC:34 AU: Liu, Ying;Yang, Qing;Zhang, Yan;Yang, Zongyin;Wang, Zhong Lin;
10:7:21 Piezotronic Interface Engineering on ZnO/Au-Based Schottky Junction for Enhanced Photoresponse of a Flexible Self-Powered UV Detector
DOI:10.1021/am503442c JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:7 AU: Lu, Shengnan;Qi, Junjie;Liu, Shuo;Zhang, Zheng;Wang, Zengze;Lin, Pei;Liao, Qingliang;Liang, Qijie;Zhang, Yue;
10:7:22 Effective piezo-phototronic enhancement of solar cell performance by tuning material properties
DOI:10.1016/j.nanoen.2013.08.008 JN:NANO ENERGY PY:2013
TC:13 AU: Wen, Xiaonan;Wu, Wenzhuo;Wang, Zhong Lin;
10:7:23 Piezotronic Effect in Flexible Thin-film Based Devices
DOI:10.1002/adma.201300296 JN:ADVANCED MATERIALS PY:2013
TC:19 AU: Wen, Xiaonan;Wu, Wenzhuo;Ding, Yong;Wang, Zhong Lin;
10:7:24 Vertically Aligned CdSe Nanowire Arrays for Energy Harvesting and Piezotronic Devices
DOI:10.1021/nn3022074 JN:ACS NANO PY:2012
TC:28 AU: Zhou, Yu Sheng;Wang, Kai;Han, Weihua;Rai, Satish Chandra;Zhang, Yan;Ding, Yong;Pan, Caofeng;Zhang, Fang;Zhou, Weilie;Wang, Zhong Lin;
10:7:25 Band Structure Engineering at Heterojunction Interfaces via the Piezotronic Effect
DOI:10.1002/adma.201104386 JN:ADVANCED MATERIALS PY:2012
TC:30 AU: Shi, Jian;Starr, Matthew B.;Wang, Xudong;
10:7:26 Ferroelectric Coupling Effect on the Energy-Band Structure of Hybrid Heterojunctions with Self-Organized P(VDF-TrFE) Nanomatrices
DOI:10.1002/adma.201400405 JN:ADVANCED MATERIALS PY:2014
TC:2 AU: Shin, Kyung-Sik;Kim, Tae Yun;Yoon, Gyu Cheol;Gupta, Manoj Kumar;Kim, Sung Kyun;Seung, Wanchul;Kim, Hyeok;Kim, Sungjin;Kim, SeongMin;Kim, Sang-Woo;
10:7:27 Piezo-Phototronic Effect-Induced Dual-Mode Light and Ultrasound Emissions from ZnS:Mn/PMN-PT Thin-Film Structures
DOI:10.1002/adma.201104584 JN:ADVANCED MATERIALS PY:2012
TC:25 AU: Zhang, Yang;Gao, Guanyin;Chan, Helen L. W.;Dai, Jiyan;Wang, Yu;Hao, Jianhua;
10:7:28 Piezoelectric-Polarization-Enhanced Photovoltaic Performance in Depleted-Heterojunction Quantum-Dot Solar Cells
DOI:10.1002/adma.201203021 JN:ADVANCED MATERIALS PY:2013
TC:15 AU: Shi, Jian;Zhao, Ping;Wang, Xudong;
10:7:29 The Clash of Mechanical and Electrical Size-Effects in ZnO Nanowires and a Double Power Law Approach to Elastic Strain Engineering of Piezoelectric and Piezotronic Devices
DOI:10.1002/adma.201401026 JN:ADVANCED MATERIALS PY:2014
TC:3 AU: Rinaldi, Antonio;Araneo, Rodolfo;Celozzi, Salvatore;Pea, Marialilia;Notargiacomo, Andrea;
10:7:30 Enhanced Ferroelectric-Nanocrystal-Based Hybrid Photocatalysis by Ultrasonic-Wave-Generated Piezophototronic Effect
DOI:10.1021/nl504630j JN:NANO LETTERS PY:2015
TC:1 AU: Li, Haidong;Sang, Yuanhua;Chang, Sujie;Huang, Xin;Zhang, Yan;Yang, Rusen;Jiang, Huaidong;Liu, Hong;Wang, Zhong Lin;
10:7:31 Enhanced photoresponse of ZnO nanorods-based self-powered photodetector by piezotronic interface engineering
DOI:10.1016/j.nanoen.2014.07.019 JN:NANO ENERGY PY:2014
TC:10 AU: Zhang, Zheng;Liao, Qingliang;Yu, Yanhao;Wang, Xudong;Zhang, Yue;
10:7:32 Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO3 Nanowire/Microwire
DOI:10.1021/nn3010558 JN:ACS NANO PY:2012
TC:29 AU: Wu, Jyh Ming;Chen, Cheng-Ying;Zhang, Yan;Chen, Kuan-Hsueh;Yang, Ya;Hu, Youfan;He, Jr-Hau;Wang, Zhong Lin;
10:7:33 Piezotronic Effect on the Sensitivity and Signal Level of Schottky Contacted Proactive Micro/Nanowire Nanosensors
DOI:10.1021/nn306007p JN:ACS NANO PY:2013
TC:32 AU: Pan, Caofeng;Yu, Ruomeng;Niu, Simiao;Zhu, Guang;Wang, Zhong Lin;
10:7:34 Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films
DOI:10.1021/nl301879f JN:NANO LETTERS PY:2012
TC:18 AU: Hu, Youfan;Zhang, Yan;Lin, Long;Ding, Yong;Zhu, Guang;Wang, Zhong Lin;
10:7:35 Crystal Face-Dependent Nanopiezotronics of an Obliquely Aligned InN Nanorod Array
DOI:10.1021/nl202782q JN:NANO LETTERS PY:2012
TC:15 AU: Ku, Nai-Jen;Huang, Jun-Han;Wang, Chao-Hung;Fang, Hsin-Chiao;Liu, Chuan-Pu;
10:7:36 Effects of Free Carriers on Piezoelectric Nanogenerators and Piezotronic Devices Made of GaN Nanowire Arrays
DOI:10.1002/smll.201400768 JN:SMALL PY:2014
TC:1 AU: Wang, Chao-Hung;Liao, Wei-Shun;Ku, Nai-Jen;Li, Yi-Chang;Chen, Yen-Chih;Tu, Li-Wei;Liu, Chuan-Pu;
10:7:37 Enhanced Performance of a ZnO Nanowire-Based Self-Powered Glucose Sensor by Piezotronic Effect
DOI:10.1002/adfm.201300593 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:37 AU: Yu, Ruomeng;Pan, Caofeng;Chen, Jun;Zhu, Guang;Wang, Zhong Lin;
10:7:38 Wafer-Scale High-Throughput Ordered Arrays of Si and Coaxial Si/Si1-xGex Wires: Fabrication, Characterization, and Photovoltaic Application
DOI:10.1021/nn202075z JN:ACS NANO PY:2011
TC:23 AU: Pan, Caofeng;Luo, Zhixiang;Xu, Chen;Luo, Jun;Liang, Renrong;Zhu, Guang;Wu, Wenzhuo;Guo, Wenxi;Yan, Xingxu;Xu, Jun;Wang, Zhong Lin;Zhu, Jing;
10:7:39 Piezo-Phototronic Effect of CdSe Nanowires
DOI:10.1002/adma.201201385 JN:ADVANCED MATERIALS PY:2012
TC:14 AU: Dong, Lin;Niu, Simiao;Pan, Caofeng;Yu, Ruomeng;Zhang, Yan;Wang, Zhong Lin;
10:7:40 Enhanced Performance of Flexible ZnO Nanowire Based Room-Temperature Oxygen Sensors by Piezotronic Effect
DOI:10.1002/adma.201301262 JN:ADVANCED MATERIALS PY:2013
TC:25 AU: Niu, Simiao;Hu, Youfan;Wen, Xiaonan;Zhou, Yusheng;Zhang, Fang;Lin, Long;Wang, Sihong;Wang, Zhong Lin;
10:7:41 Biomolecule-adsorption-dependent piezoelectric output of ZnO nanowire nanogenerator and its application as self-powered active biosensor
DOI:10.1016/j.bios.2014.02.022 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:14 AU: Zhao, Yayu;Deng, Ping;Nie, Yuxin;Wang, Penglei;Zhang, Yan;Xing, Lili;Xue, Xinyu;
10:7:42 Synthesis of vertically aligned ultra-long ZnO nanowires on heterogeneous substrates with catalyst at the root
DOI:10.1088/0957-4484/23/5/055604 JN:NANOTECHNOLOGY PY:2012
TC:27 AU: Zhu, Guang;Zhou, Yusheng;Wang, Sihong;Yang, Rusen;Ding, Yong;Wang, Xue;Bando, Yoshio;Wang, Zhong Lin;
10:7:43 Piezopotential Gated Nanowire-Nanotube Hybrid Field-Effect Transistor
DOI:10.1021/nl1017145 JN:NANO LETTERS PY:2010
TC:21 AU: Liu, Weihua;Lee, Minbaek;Ding, Lei;Liu, Jie;Wang, Zhong Lin;
10:7:44 Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires
DOI:10.1021/nn301277m JN:ACS NANO PY:2012
TC:32 AU: Han, Weihua;Zhou, Yusheng;Zhang, Yan;Chen, Cheng-Ying;Lin, Long;Wang, Xue;Wang, Sihong;Wang, Zhong Lin;
10:7:45 Optimizing Performance of Silicon-Based p-n junction Photodetectors by the Piezo-Phototronic Effect
DOI:10.1021/nn506427p JN:ACS NANO PY:2014
TC:4 AU: Wang, Zhaona;Yu, Ruomeng;Wen, Xiaonan;Liu, Ying;Pan, Caofeng;Wu, Wenzho;Wang, Zhong Lin;
10:7:46 Three-Dimensional Kelvin Probe Microscopy for Characterizing In-Plane Piezoelectric Potential of Laterally Deflected ZnO Micro-/Nanowires
DOI:10.1002/adfm.201102325 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:10 AU: Bayerl, Dylan J.;Wang, Xudong;
10:7:47 Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics
DOI:10.1002/adma.201201020 JN:ADVANCED MATERIALS PY:2012
TC:29 AU: Yu, Ruomeng;Dong, Lin;Pan, Caofeng;Niu, Simiao;Liu, Hongfei;Liu, Wei;Chua, Soojin;Chi, Dongzhi;Wang, Zhong Lin;
10:7:48 Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect
DOI:10.1002/adma.201203263 JN:ADVANCED MATERIALS PY:2013
TC:15 AU: Zhou, Yu Sheng;Hinchet, Ronan;Yang, Ya;Ardila, Gustavo;Songmuang, Rudeesun;Zhang, Fang;Zhang, Yan;Han, Weihua;Pradel, Ken;Montes, Laurent;Mouis, Mireille;Wang, Zhong Lin;
10:7:49 Piezoelectric nanogenerator based on a flexible carbon-fiber/ZnO-ZnSe bilayer structure wire
DOI:10.1016/j.apsusc.2014.10.081 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Liu, Chunlei;Zhang, Weiguang;Sun, Jianbo;Wen, Jing;Yang, Qing;Cuo, Huixin;Ma, Xinzhi;Zhang, Mingyi;
10:7:50 Depletion width engineering via surface modification for high performance semiconducting piezoelectric nanogenerators
DOI:10.1016/j.nanoen.2014.06.008 JN:NANO ENERGY PY:2014
TC:9 AU: Lee, Keun Young;Bae, Jihyun;Kim, SeongMin;Lee, Ju-Hyuck;Yoon, Gyu Cheol;Gupta, Manoj Kumar;Kim, Sungjin;Kim, Hyeok;Park, Jongjin;Kim, Sang-Woo;
10:7:51 Contact Electrification Field-Effect Transistor
DOI:10.1021/nn5039806 JN:ACS NANO PY:2014
TC:8 AU: Zhang, Chi;Tang, Wei;Zhang, Limin;Han, Changbao;Wang, Zhong Lin;
10:7:52 Optimization of the Output Efficiency of GaN Nanowire Piezoelectric Nanogenerators by Tuning the Free Carrier Concentration
DOI:10.1002/aenm.201400392 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:2 AU: Wang, Chao-Hung;Liao, Wei-Shun;Lin, Zong-Hong;Ku, Nai-Jen;Li, Yi-Chang;Chen, Yen-Chih;Wang, Zhong-Lin;Liu, Chuan-Pu;
10:7:53 Piezo-Semiconductive Quasi-1D Nanodevices with or without Anti-Symmetry
DOI:10.1002/adma.201104588 JN:ADVANCED MATERIALS PY:2012
TC:22 AU: Araneo, Rodolfo;Lovat, Giampiero;Burghignoli, Paolo;Falconi, Christian;
10:7:54 An In-ZnO nanosheet-modified carbon nanotube-polyimide film sensor for catechol detection
DOI:10.1039/c3ta15436j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Jiang, Yimin;Jia, Lingpu;Yu, Shengjiao;Wang, Chunming;
10:7:55 Separation of the piezotronic and piezoresistive effects in a zinc oxide nanowire
DOI:10.1088/0957-4484/25/34/345702 JN:NANOTECHNOLOGY PY:2014
TC:6 AU: Zhu, Ren;Yang, Rusen;
10:7:56 Theoretical Study of Piezo-phototronic Nano-LEDs
DOI:10.1002/adma.201402328 JN:ADVANCED MATERIALS PY:2014
TC:3 AU: Liu, Ying;Niu, Simiao;Yang, Qing;Klein, Benjamin D. B.;Zhou, Yu Sheng;Wang, Zhong Lin;
10:7:57 Seedless synthesis of patterned ZnO nanowire arrays on metal thin films (Au, Ag, Cu, Sn) and their application for flexible electromechanical sensing
DOI:10.1039/c2jm31434g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:30 AU: Wen, Xiaonan;Wu, Wenzhuo;Ding, Yong;Wang, Zhong Lin;
10:7:58 GaN Nanobelt-Based Strain-Gated Piezotronic Logic Devices and Computation
DOI:10.1021/nn4026788 JN:ACS NANO PY:2013
TC:9 AU: Yu, Ruomeng;Wu, Wenzhuo;Ding, Yong;Wang, Zhong Lin;
10:7:59 Current generation of vertically aligned ZnO nanowires by photo-induced deformation of a matrix polymer
DOI:10.1039/c3tc31343c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Jang, Dongseok;Yoon, Jangyeol;Kim, Daeil;Moon, Young Sun;Kima, Kyung Hoon;Ha, Jeong Sook;
10:7:60 Magnetic-Mechanical-Electrical-Optical Coupling Effects in GaN-Based LED/Rare-Earth Terfenol-D Structures
DOI:10.1002/adma.201402824 JN:ADVANCED MATERIALS PY:2014
TC:1 AU: Peng, Mingzeng;Zhang, Yan;Liu, Yudong;Song, Ming;Zhai, Junyi;Wang, Zhong Lin;
10:7:61 Effects of piezopotential spatial distribution on local contact dictated transport property of ZnO micro/nanowires
DOI:10.1063/1.3467815 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Zhang, Yan;Hu, Youfan;Xiang, Shu;Wang, Zhong Lin;
10:7:62 Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate
DOI:10.1063/1.4875276 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Anufriev, Roman;Chauvin, Nicolas;Khmissi, Hammadi;Naji, Khalid;Patriarche, Gilles;Gendry, Michel;Bru-Chevallier, Catherine;
10:7:63 Pyroelectric-field driven defects diffusion along c-axis in ZnO nanobelts under high-energy electron beam irradiation
DOI:10.1063/1.4898644 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Ding, Yong;Liu, Ying;Niu, Simiao;Wu, Wenzhuo;Wang, Zhong Lin;
10:7:64 Temperature Dependence of the Piezotronic Effect in ZnO Nanowires
DOI:10.1021/nl401702g JN:NANO LETTERS PY:2013
TC:15 AU: Hu, Youfan;Klein, Benjamin D. B.;Su, Yuanjie;Niu, Simiao;Liu, Ying;Wang, Zhong Lin;
10:7:65 Electrospun ZnO/SiO2 hybrid nanofibrous mat for flexible ultraviolet sensor
DOI:10.1063/1.4870296 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xi, Min;Wang, Xiaoxu;Zhao, Yong;Zhu, Zhengtao;Fong, Hao;
10:7:66 Controlling Semiconducting and Insulating States of SnO2 Reversibly by Stress and Voltage
DOI:10.1021/nn302312v JN:ACS NANO PY:2012
TC:7 AU: Liu, Kewei;Sakurai, Makoto;Aono, Masakazu;
10:7:67 Theory of Piezo-Phototronics for Light-Emitting Diodes
DOI:10.1002/adma.201104263 JN:ADVANCED MATERIALS PY:2012
TC:10 AU: Zhang, Yan;Wang, Zhong Lin;
10:7:68 High performance ZnO nanorod strain driving transistor based complementary metal-oxide-semiconductor logic gates
DOI:10.1063/1.3526719 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Liu, Nishuang;Fang, Guojia;Zeng, Wei;Zhou, Hai;Long, Hao;Zou, Xiao;Liu, Yuping;Zhao, Xingzhong;
10:7:69 Piezotronic Effect on ZnO Nanowire Film Based Temperature Sensor
DOI:10.1021/am500993p JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:9 AU: Xue, Fei;Zhang, Limin;Tang, Wei;Zhang, Chi;Du, Weiming;Wang, Zhong Lin;
10:7:70 ZnO-Zn/CNT hybrid film as light-free nanocatalyst for degradation reaction
DOI:10.1016/j.nanoen.2013.06.015 JN:NANO ENERGY PY:2013
TC:2 AU: Li, Shengjuan;Zhang, Mei;Gao, Yulai;Bao, Baoshan;Wang, Shulin;
10:7:71 Enhancing sensitivity of force sensor based on a ZnO tetrapod by piezo-phototronic effect
DOI:10.1063/1.4821851 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Wang, Zengze;Qi, Junjie;Lu, Shengnan;Li, Peifeng;Li, Xin;Zhang, Yue;
10:7:72 Piezoelectric gated ZnO nanowire diode studied by in situ TEM probing
DOI:10.1016/j.nanoen.2013.10.002 JN:NANO ENERGY PY:2014
TC:2 AU: Zhang, Renyun;Andersson, Henrik;Olsen, Martin;Hummelgard, Magnus;Edvardsson, Sverker;Nilsson, Hans-Erik;Olin, Hakan;
10:7:73 Uniform Zinc Oxide Nanowire Arrays Grown on Nonepitaxial Surface with General Orientation Control
DOI:10.1021/nl402476u JN:NANO LETTERS PY:2013
TC:10 AU: Zhu, Ren;Zhang, Wengui;Li, Chao;Yang, Rusen;
10:7:74 Elastic and Piezoelectric Properties of Zincblende and Wurtzite Crystalline Nanowire Heterostructures
DOI:10.1002/adma.201200370 JN:ADVANCED MATERIALS PY:2012
TC:13 AU: Boxberg, Fredrik;Sondergaard, Niels;Xu, H. Q.;
10:7:75 Fabrication of highly ordered Ta2O5 and Ta3N5 nanorod arrays by nanoimprinting and through-mask anodization
DOI:10.1088/0957-4484/25/1/014013 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Li, Yanbo;Nagato, Keisuke;Delaunay, Jean-Jacques;Kubota, Jun;Domen, Kazunari;
10:7:76 Localized ultraviolet photoresponse in single bent ZnO micro/nanowires
DOI:10.1063/1.3495939 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Guo, Wen;Yang, Ya;Qi, Junjie;Zhao, Jing;Zhang, Yue;
10:7:77 Realizing room-temperature self-powered ethanol sensing of Au/ZnO nanowire arrays by coupling the piezotronics effect of ZnO and the catalysis of noble metal
DOI:10.1063/1.4861169 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Xing, Lili;Hu, Yuefeng;Wang, Penglei;Zhao, Yayu;Nie, Yuxin;Deng, Ping;Xue, Xinyu;
10:7:78 Optimizing the Power Output of a ZnO Photocell by Piezopotential (vol 4, pg 4220, 2010)
DOI:10.1021/nn101631v JN:ACS NANO PY:2010
TC:1 AU: Hu, Youfan;Zhang, Yan;Chang, Yanling;Snyder, Robert L.;Wang, Zhong Lin;
10:7:79 Preface to the Special Section on Piezotronics
DOI:10.1002/adma.201202888 JN:ADVANCED MATERIALS PY:2012
TC:5 AU: Wang, Zhong Lin;
10:7:80 ZnO/zeolite hybrid nanostructures: synthesis, structure, optical properties, and simulation
DOI:10.1016/j.tsf.2013.05.157 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Chrissanthopoulos, A.;Kyriazis, F. C.;Nikolakis, V.;Giannakopoulos, I. G.;Dracopoulos, V.;Baskoutas, S.;Bouropoulos, N.;Yannopoulos, S. N.;
10:8:1 Electronic and magnetic properties of Co-doped ZnO diluted magnetic semiconductor
DOI:10.1016/j.jallcom.2010.02.005 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:51 AU: Singhal, R. K.;Samariya, Arvind;Xing, Y. T.;Kumar, Sudhish;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:8:2 A study of structural, optical and magnetic properties of Zn0.97-xCuxCr0.03O diluted magnetic semiconductors
DOI:10.1016/j.jallcom.2010.12.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:30 AU: Yang, Jinghai;Fei, Lianhua;Liu, Huilian;Liu, Yang;Gao, Ming;Zhang, Yongjun;Yang, Lili;
10:8:3 Effects of annealing atmosphere on structure, optical and magnetic properties of Zn0.95Cu0.02Cr0.03O diluted magnetic semiconductors
DOI:10.1016/j.jallcom.2013.10.193 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Liu, Huilian;Fei, Lianhua;Liu, Hongbo;Lang, Jihui;Yang, Jinghai;Liu, Yang;Gao, Ming;Liu, Xiaoyan;Cheng, Xin;Wei, Maobin;
10:8:4 Structural, optical and EPR studies on ZnO:Cu nanopowders prepared via low temperature solution combustion synthesis
DOI:10.1016/j.jallcom.2011.02.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:62 AU: Reddy, A. Jagannatha;Kokila, M. K.;Nagabhushana, H.;Chakradhar, R. P. S.;Shivakumara, C.;Rao, J. L.;Nagabhushana, B. M.;
10:8:5 Role of electronic structure and oxygen defects in driving ferromagnetism in nondoped bulk CeO2
DOI:10.1063/1.3507290 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Singhal, R. K.;Kumari, P.;Samariya, A.;Kumar, Sudhish;Sharma, S. C.;Xing, Y. T.;Saitovitch, Elisa B.;
10:8:6 Structural, FTIR and photoluminescence studies of Cu doped ZnO nanopowders by co-precipitation method
DOI:10.1016/j.optmat.2012.06.004 JN:OPTICAL MATERIALS PY:2012
TC:64 AU: Muthukumaran, S.;Gopalakrishnan, R.;
10:8:7 Study of electronic and magnetic properties of vacuum annealed Cr doped ZnO
DOI:10.1016/j.jallcom.2011.11.103 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Singhal, Asmita;
10:8:8 Study of defect-induced ferromagnetism in hydrogenated anatase TiO2:Co (Retracted article. See vol. 116, 079901, 2014)
DOI:10.1063/1.3431396 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:32 AU: Singhal, R. K.;Samariya, Arvind;Kumar, Sudhish;Xing, Y. T.;Jain, D. C.;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:8:9 Enhanced ferromagnetism in single crystalline Co-doped ZnO thin films by Al codoping
DOI:10.1016/j.jallcom.2010.01.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:28 AU: Lu, Z. L.;Miao, W.;Zou, W. Q.;Xu, M. X.;Zhang, F. M.;
10:8:10 Enhancement of ferromagnetic properties in Zn0.98Cu0.02O by additional Co doping
DOI:10.1016/j.jallcom.2013.07.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Liu, Huilian;Zhang, Xu;Liu, Hongbo;Yang, Jinghai;Liu, Yang;Liu, Xiaoyan;Gao, Ming;Wei, Maobin;Cheng, Xin;Wang, Jian;
10:8:11 Study of sodium citrate dependent crystalline orientation and properties of Zn0.85Co0.05Mg0.10O films
DOI:10.1016/j.jallcom.2014.04.199 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Liu, Yanmei;Sun, Xia;Wang, Tao;Fang, Qingqing;Lv, Qingrong;Wu, Mingzai;Sun, Zhaoqi;He, Gang;Li, Aixia;
10:8:12 Effect of hydrogenation vs. re-heating on intrinsic magnetization of Co doped In2O3 (Retracted article. See vol. 300, pg. 213, 2014)
DOI:10.1016/j.apsusc.2010.07.037 JN:APPLIED SURFACE SCIENCE PY:2010
TC:27 AU: Samariya, A.;Singhal, R. K.;Kumar, Sudhish;Xing, Y. T.;Sharma, S. C.;Kumari, P.;Jain, D. C.;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, E.;
10:8:13 Effect of Co substitution on the structural and optical properties of ZnO nanoparticles synthesized by sol-gel route
DOI:10.1016/j.jallcom.2011.05.047 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:46 AU: Arshad, Mohd;Azam, Ameer;Ahmed, Arham S.;Mollah, S.;Naqvi, Alim H.;
10:8:14 Defect-induced room temperature ferromagnetism in Fe and Na co-doped ZnO nanoparticles
DOI:10.1016/j.jallcom.2012.01.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Gu, Hao;Jiang, Yinzhu;Yan, Mi;
10:8:15 Hydrothermal synthesis of Co-doped ZnO flakes with room temperature ferromagnetism
DOI:10.1016/j.jallcom.2010.04.086 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:34 AU: Xu, Xingyan;Cao, Chuanbao;
10:8:16 Structural, electrical and magnetic properties of Co and Fe co-doped ZnO nanoparticles prepared by solution combustion method
DOI:10.1016/j.jallcom.2009.10.120 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:39 AU: Dinesha, M. L.;Jayanna, H. S.;Mohanty, S.;Ravi, S.;
10:8:17 Structural, optical and magnetic properties of Eu-doped ZnO films
DOI:10.1016/j.jallcom.2011.03.084 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Tan, Yongsheng;Fang, Zebo;Chen, Wei;He, Pimo;
10:8:18 Defect-induced reversible ferromagnetism in Fe-doped ZnO semiconductor: An electronic structure and magnetization study
DOI:10.1016/j.matchemphys.2010.05.036 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:20 AU: Samariya, Arvind;Singhal, R. K.;Kumar, Sudhish;Xing, Y. T.;Alzamora, Mariella;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:8:19 Synthesis and structural characterization of ZnO doped with Co
DOI:10.1016/j.jallcom.2013.01.029 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:12 AU: Fu, Jianlong;Ren, Xuechong;Yan, Shi;Gong, Yu;Tan, Yuanyuan;Liang, Ku;Du, Rong;Xing, Xueqing;Mo, Guang;Chen, Zhongjun;Cai, Quan;Sun, Dongbai;Wu, Zhonghua;
10:8:20 Defect-induced reversible ferromagnetism in hydrogenated ZnO:Co
DOI:10.1016/j.jmmm.2010.02.007 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:21 AU: Singhal, R. K.;Samariya, A.;Kumar, Sudhish;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Baggio-Saitovitch, E.;
10:8:21 Structural, chemical and optical evaluation of Cu-doped ZnO nanoparticles synthesized by an aqueous solution method
DOI:10.1016/j.materresbull.2014.08.059 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Iribarren, A.;Hernandez-Rodriguez, E.;Maqueira, L.;
10:8:22 Effects of Ni doping on the luminescent and magnetic behaviors of ZnO nanocrystals
DOI:10.1016/j.powtec.2012.03.024 JN:POWDER TECHNOLOGY PY:2012
TC:6 AU: Zhao, Shuangxue;Li, Ping;Wei, Yu;
10:8:23 Room temperature ferromagnetism in hydrothermally grown Ni and Cu co-doped ZnO nanorods
DOI:10.1016/j.ceramint.2012.11.073 JN:CERAMICS INTERNATIONAL PY:2013
TC:15 AU: Tang, Guodong;Shi, Xiaoqin;Huo, Chao;Wang, Zhihe;
10:8:24 Physical properties of Ga-doped ZnO thin films by spray pyrolysis
DOI:10.1016/j.jallcom.2010.07.071 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:40 AU: Rao, T. Prasada;Kumar, M. C. Santhosh;
10:8:25 Annealing effects of co-doping with Al and Sb on structure and optical-electrical properties of the ZnO thin films
DOI:10.1016/j.jallcom.2010.03.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Zhong, W. W.;Liu, F. M.;Cai, L. G.;Zhou, C. C.;Ding, P.;Zhang, H.;
10:8:26 Ferromagnetism induced by donor-related defects in Co-doped ZnO thin films
DOI:10.1016/j.jallcom.2010.10.171 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Zhang, Liqiang;Ye, Zhizhen;Lu, Bin;Lu, Jianguo;Zhang, Yinzhu;Zhu, Liping;Huang, Jingyun;Zhang, Weiguang;Huang, Jun;Zhang, Jun;Jiang, Jie;Wu, Kewei;Xie, Zhi;
10:8:27 Microstructure, optical and FTIR studies of Ni, Cu co-doped ZnO nanoparticles by co-precipitation method
DOI:10.1016/j.optmat.2014.08.012 JN:OPTICAL MATERIALS PY:2014
TC:5 AU: Ashokkumar, M.;Muthukumaran, S.;
10:8:28 Study of electrical properties of nickel doped SnO2 ceramic nanoparticles
DOI:10.1016/j.jallcom.2010.06.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:29 AU: Azam, Ameer;Ahmed, Arham S.;Ansari, M. Shahnawaze;Shafeeq M, Muhamed;Naqvi, Alim H.;
10:8:29 Effects of oxygen vacancy on the electrical and magnetic properties of anatase Fe0.05Ti0.95O2-delta films
DOI:10.1016/j.jallcom.2013.04.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Li, Q. H.;Wei, L.;Xie, Y. R.;Jiang, F.;Zhou, T.;Hu, G. X.;Jiao, J.;Chen, Y. X.;Liu, G. L.;Yan, S. S.;Mei, L. M.;
10:8:30 Effects of pH of the precursor sol on structural and optical properties of Cu-doped ZnO thin films
DOI:10.1016/j.jallcom.2014.07.070 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Yuan, H.;Xu, M.;Huang, Q. Z.;
10:8:31 Electronic structure and magnetization correlations in Ni doped ZnO
DOI:10.1016/j.matlet.2011.02.048 JN:MATERIALS LETTERS PY:2011
TC:10 AU: Singhal, R. K.;Kumar, Sudhish;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Dolia, S. N.;Saitovitch, E.;
10:8:32 The structure and magnetic properties of Cu-doped ZnO prepared by sol-gel method
DOI:10.1016/j.apsusc.2010.01.118 JN:APPLIED SURFACE SCIENCE PY:2010
TC:42 AU: Liu, Huilian;Yang, Jinghai;Hua, Zhong;Zhang, Yongjun;Yang, Lili;Xiao, Li;Xie, Zhi;
10:8:33 Study of hydrogenation versus de-loading of Co and Mn doped ZnO semiconductor
DOI:10.1016/j.jallcom.2010.07.189 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Singhal, Asmita;
10:8:34 Evidence of defect-mediated magnetic coupling on hydrogenated Co-doped ZnO
DOI:10.1016/j.jallcom.2012.11.105 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:10 AU: de Godoy, M. P. F.;Mesquita, A.;Avansi, W.;Neves, P. P.;Chitta, V. A.;Ferraz, W. B.;Boselli, M. A.;Sabioni, A. C. S.;de Carvalho, H. B.;
10:8:35 Microstructure and band gap tailoring of Zn0.96-xCu0.04CoxO (0 <= x <= 0.04) nanoparticles prepared by co-precipitation method
DOI:10.1016/j.jallcom.2013.10.246 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:8 AU: Ashokkumar, M.;Muthukumaran, S.;
10:8:36 Effect of Cr-doping on dielectric, electric and magnetic properties of Zn0.96Cu0.04O nanopowders
DOI:10.1016/j.powtec.2014.08.012 JN:POWDER TECHNOLOGY PY:2014
TC:0 AU: Ashokkumar, M.;Muthukumaran, S.;
10:8:37 Tuning of energy gap, microstructure, optical and structural properties of Cr doped Zn0.96Cu0.04O nanoparticles
DOI:10.1016/j.powtec.2014.03.013 JN:POWDER TECHNOLOGY PY:2014
TC:4 AU: Ashokkumar, M.;Muthukumaran, S.;
10:8:38 Effect of annealing temperature on structure, magnetic properties and optical characteristics in Zn0.97Cr0.03O nanoparticles
DOI:10.1016/j.apsusc.2009.12.154 JN:APPLIED SURFACE SCIENCE PY:2010
TC:27 AU: Liu, Yang;Yang, Jinghai;Guan, Qingfeng;Yang, Lili;Liu, Huilian;Zhang, Yongjun;Wang, Yaxin;Wang, Dandan;Lang, Jihui;Yang, Yanting;Fei, Lianhua;Wei, Maobin;
10:8:39 Tunable room temperature ferromagnetism in Sn0.93Fe0.05M0.02O2-sigma (M = Sb/Mg): The role of electron-and hole-doping
DOI:10.1016/j.jallcom.2011.01.211 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:3 AU: Ke, C.;Zhu, W.;Pan, J. S.;Yang, Z.;Li, Z. P.;Wang, L.;
10:8:40 Properties of Ni doped and Ni-Ga co-doped ZnO thin films prepared by pulsed laser deposition
DOI:10.1016/j.jallcom.2010.10.049 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Wang, Xuetao;Zhu, Liping;Zhang, Liqiang;Jiang, Jie;Yang, Zhiguo;Ye, Zhizhen;He, Bo;
10:8:41 Study of electronic structure and magnetization correlations in hydrogenated and vacuum annealed Ni doped ZnO (Retracted article. See vol. 115, 239902, 2014)
DOI:10.1063/1.3556458 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Singhal, R. K.;Sharma, S. C.;Kumari, P.;Kumar, Sudhish;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa;
10:8:42 Structural, magnetic and optical studies of (Zn0.90Co0.05Ni0.05O) DMS
DOI:10.1016/j.matlet.2010.06.046 JN:MATERIALS LETTERS PY:2010
TC:23 AU: Sebastian, K. C.;Chawda, Mukesh;Jonny, Linu;Bodas, Dhananjay;
10:8:43 Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2
DOI:10.1016/j.apsusc.2012.08.096 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Borges, Pablo D.;Scolfaro, Luisa M. R.;Leite Alves, Horacio W.;da Silva, Eronides F., Jr.;Assali, Lucy V. C.;
10:8:44 Rapid synthesis and room temperature ferromagnetism of Ni doped ZnO DMS nanoflakes
DOI:10.1016/j.ceramint.2014.03.053 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Koseoglu, Yuksel;Durmaz, Y. Celaleddin;Yilgin, Resul;
10:8:45 Effect of carbon doping on microstructure, electronic and magnetic properties of Cr:AlN films
DOI:10.1016/j.jallcom.2010.09.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Zeng, F.;Chen, C.;Fan, B.;Yang, Y. C.;Yang, P. Y.;Luo, J. T.;Pan, F.;Yan, W. S.;
10:8:46 Influence of Co-doping on the structural, optical and morphological properties of Zn0.96Mn0.04O nanoparticles by sol-gel method
DOI:10.1016/j.optmat.2013.11.031 JN:OPTICAL MATERIALS PY:2014
TC:5 AU: Sivaselvan, S.;Muthukumaran, S.;Ashokkumar, M.;
10:8:47 Magnetic manipulation by resistance switching in CeO2/PrBa2Cu3O7-delta/Pt heterostructure: The role of oxygen vacancies
DOI:10.1063/1.4860962 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Yun, C.;Chen, X. G.;Fu, J. B.;Sun, J. R.;Zhang, Y. X.;Wang, Y. F.;Zhang, Y.;Liu, S. Q.;Xiong, G. C.;Lian, G. J.;Yang, Y. C.;Yang, J. B.;
10:8:48 Investigations of DC-magnetization behavior of nanocrystalline ZnO:Ni
DOI:10.1016/j.jallcom.2010.08.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Goyal, Vidhi;Bhatti, Kanwal Preet;Chaudhary, Sujeet;
10:8:49 Hydrothermal synthesis and optical properties of Ni doped ZnO hexagonal nanodiscs
DOI:10.1016/j.jallcom.2010.09.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:19 AU: Al-Harbi, T.;
10:8:50 Quantum-sized ZnO nanoparticles synthesized in aqueous medium for toxic gases detection
DOI:10.1016/j.jallcom.2012.05.106 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Li, Dianqing;Hu, Jingwei;Fan, Faying;Bai, Shouli;Luo, Ruixian;Chen, Aifan;Liu, Chung Chiun;
10:8:51 Synthesis of zinc oxide nanotubes within ultrathin anodic aluminum oxide membrane by sol-gel method
DOI:10.1016/j.matlet.2013.02.037 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Yue, Song;Yan, Zhensheng;Shi, Yunfeng;Ran, Guangxu;
10:8:52 Magnetic and electronic properties of Sn1-xCrxO2 diluted alloys
DOI:10.1016/j.mseb.2011.01.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:4 AU: Borges, Pablo D.;Scolfaro, Lui'sa M. R.;Leite Alves, Horacio W.;da Silva, Eronides F., Jr.;Assali, Lucy V. C.;
10:8:53 Valence band and core-level analysis of highly luminescent ZnO nanocrystals for designing ultrafast optical sensors
DOI:10.1063/1.3354025 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Joshi, Amish G.;Sahai, Sonal;Gandhi, Namita;Krishna, Y. G. Radha;Haranath, D.;
10:8:54 Annealing effects on structural and magnetic properties of Co-doped ZnO nanowires synthesized by an electrodeposition process
DOI:10.1016/j.jallcom.2010.08.107 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Gu, Jian-jun;Liu, Li-hu;Li, Hai-tao;Xu, Qin;Sun, Hui-yuan;
10:8:55 The origin of ferromagnetism in Co-doped ZnO single crystalline films upon reducing annealings
DOI:10.1016/j.jallcom.2009.11.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:14 AU: Lu, Z. L.;Bian, X. F.;Zou, W. Q.;Xu, M. X.;Zhang, F. M.;
10:8:56 Magnetic and electric properties of C-Co thin films prepared by vaccum arc technique
DOI:10.1016/j.jallcom.2011.06.068 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:1 AU: Tembre, A.;Clin, M.;Picot, J. -C.;Dellis, J. -L.;Henocque, J.;Bouzerar, R.;Djellab, K.;
10:8:57 Growth and characterization of ZnO nanorod arrays on boron-doped diamond films by low temperature hydrothermal reaction
DOI:10.1016/j.jallcom.2012.05.096 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:8 AU: Gao, Shiyong;Li, Dongmei;Li, Yingai;Lv, Xianyi;Wang, Jinzhong;Li, Hongtao;Yu, Qingjiang;Guo, Fengyun;Zhao, Liancheng;
10:8:58 Room temperature ferromagnetism in combustion synthesized nanocrystalline Co, Al co-doped ZnO
DOI:10.1016/j.jallcom.2013.06.117 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Siddheswaran, R.;Mangalaraja, R. V.;Elana Gomez, Maria;Avila, Ricardo E.;Jeyanthi, C. Esther;
10:8:59 Influence of ageing on H-induced ferromagnetism in Zn1-xMxO (M = Co, Fe, Mn)
DOI:10.1016/j.matlet.2010.05.016 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Singhal, R. K.;Samariya, Arvind;Kumar, Sudhish;Xing, Y. T.;Saitovitch, Elisa;
10:8:60 Microstructures, surface bonding states and room temperature ferromagnetisms of Zn0.95Co0.05O thin films doped with copper
DOI:10.1016/j.apsusc.2010.01.005 JN:APPLIED SURFACE SCIENCE PY:2010
TC:13 AU: Quan, Zuci;Li, Dan;Sebo, Bobby;Liu, Wei;Guo, Shishang;Xu, Sheng;Huang, Huiming;Fang, Guojia;Li, Meiya;Zhao, Xingzhong;
10:8:61 Exploring the dielectric behavior of Co doped ZnO nanoparticles synthesized by wet chemical route using impedance spectroscopy
DOI:10.1016/j.jallcom.2013.06.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Arshad, Mohd;Ahmed, Arham S.;Azam, Ameer;Naqvi, A. H.;
10:8:62 Magnetic behaviour of Fe-doped CdS diluted magnetic semiconducting nanocrystalline thin films
DOI:10.1063/1.4748270 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: El-Hagary, M.;Soltan, S.;
10:8:63 Structural, spectroscopic and magnetic characterization of undoped, Ni2+ doped ZnO nanopowders
DOI:10.1016/j.jmmm.2014.07.057 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:4 AU: Babu, B.;Sundari, G. Rama;Ravindranadh, K.;Yadav, M. Rajesh;Ravikumar, R. V. S. S. N.;
10:8:64 Synthesis and characterization of undoped and TM (Co, Mn) doped ZnO nanoparticles
DOI:10.1016/j.matlet.2011.06.029 JN:MATERIALS LETTERS PY:2011
TC:13 AU: Nirmala, M.;Anukaliani, A.;
10:8:65 Magnetic, magnetoresistance and electrical transport properties of Ni and Al co-doped ZnO films grown on glass substrates by direct current magnetron co-sputtering
DOI:10.1016/j.matchemphys.2009.12.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:8 AU: Yu, Mingpeng;Qiu, Hong;Chen, Xiaobai;Liu, Hongxi;
10:8:66 Comment on "Effect of annealing temperature on structure, magnetic properties and optical characteristics in Zn0.97Cr0.03O nanoparticles" by Liu et al., [Appl. Surf. Sci. 256 (2010) 3559]
DOI:10.1016/j.apsusc.2010.08.079 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Singhal, R. K.;
10:8:67 Ferromagnetism in ZnTe:Cr film grown on Si(100)
DOI:10.1016/j.jallcom.2010.08.103 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Soundararajan, D.;Peranantham, P.;Mangalaraj, D.;Nataraj, D.;Dorosinskii, L.;Santoyo-Salazar, J.;Ko, J. M.;
10:8:68 Oxygen defect origin of ferromagnetism in ZnCoO
DOI:10.1016/j.jmmm.2009.05.030 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:9 AU: Hanafin, Ruairi;Sanvito, Stefano;
10:8:69 Solvothermal synthesis and magneto-optical properties of Zn1-xNixO hierarchical microspheres
DOI:10.1016/j.jmmm.2010.12.011 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:10 AU: Liu, Zhifu;Zhang, Qinghong;Shi, Guoying;Li, Yaogang;Wang, Hongzhi;
10:8:70 Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application
DOI:10.1016/j.matchar.2012.02.015 JN:MATERIALS CHARACTERIZATION PY:2012
TC:15 AU: Saravanan, R.;Santhi, Kalavathy;Sivakumar, N.;Narayanan, V.;Stephen, A.;
10:8:71 Al and Ni co-doped ZnO films with room temperature ferromagnetism, low resistivity and high transparence
DOI:10.1016/j.matchemphys.2010.12.041 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:8 AU: Yu, Mingpeng;Qiu, Hong;Chen, Xiaobai;Li, Hui;Gong, Wei;
10:8:72 Reversible switching of room temperature ferromagnetism in CeO2-Co nanoparticles
DOI:10.1063/1.4705045 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Sacanell, J.;Paulin, M. A.;Ferrari, V.;Garbarino, G.;Leyva, A. G.;
10:8:73 Vacancy-induced room-temperature ferromagnetism in ZnO rods synthesized by Ni-doped solution and hydrothermal method
DOI:10.1016/j.apsusc.2010.02.067 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Yu, Zhenhua;Ge, Shihui;Zuo, Yalu;Wang, Guowei;Zhang, Feng;
10:8:74 Accounting oxygen vacancy for half-metallicity and magnetism in Fe-doped CeO2 dilute magnetic oxide
DOI:10.1016/j.commatsci.2013.02.029 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:8 AU: Saini, Hardev S.;Singh, Mukhtiyar;Reshak, Ali H.;Kashyap, Manish K.;
10:8:75 DC magnetization investigations in Ti1-xMnxO2 nanocrystalline powder
DOI:10.1016/j.jallcom.2011.04.072 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:3 AU: Sharma, Sudesh;Chaudhary, Sujeet;Kashyap, Subhash C.;Malik, Vivek K.;
10:8:76 Room-temperature ferromagnetism in Co-doped CeO2 nanospheres prepared by the polyvinylpyrrolidone-assisted hydrothermal method
DOI:10.1063/1.4766273 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Phokha, Sumalin;Pinitsoontorn, Supree;Maensiri, Santi;
10:8:77 Structural and magnetic studies on transition metal (Mn, Co) doped ZnO nanoparticles
DOI:10.1016/j.jmmm.2011.08.061 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:12 AU: Sharma, V. K.;Najim, M.;Srivastava, A. K.;Varma, G. D.;
10:8:78 Zn0.91CU0.04M0.05O (M = Ni, Co, Cr) nanocrystals: Structural study and energy gap tailoring
DOI:10.1016/j.matlet.2014.05.213 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Ashokkumar, M.;Muthukumaran, S.;
10:8:79 Magnetic properties of different temperature treated Co- and Ni-doped ZnO hollow nanospheres
DOI:10.1016/j.mssp.2010.05.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:9 AU: Zhang, Yong;Shi, Er-Wei;Chen, Zhi-Zhan;
10:8:80 Effect of defects on room-temperature ferromagnetism in Co and Na co-doped ZnO
DOI:10.1007/s00339-012-6824-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Gu, Hao;Jiang, Yinzhu;Xu, Yongbing;Yan, Mi;
10:8:81 Room temperature ferromagnetism and optical properties of Cu2+ doped ZnO nanopowder by ultrasound assisted solid state reaction technique
DOI:10.1016/j.jmmm.2013.11.038 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:12 AU: Babu, B.;Aswani, T.;Rao, G. Thirumala;Stella, R. Joyce;Jayaraja, B.;Ravikumar, R. V. S. S. N.;
10:8:82 Effect of Cr Content on the Properties of Magnetic Field Processed Cr-Doped ZnO-Diluted Magnetic Semiconductors
DOI:10.1155/2012/501069 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Wang, Shiwei;Bo, Weiqiang;Zhong, Min;Liu, Cong;Li, Ying;Zhu, Mingyuan;Hu, Yemin;Jin, Hongmin;
10:8:83 Room temperature ferromagnetism in sputtered Zn1-xCrxO thin films
DOI:10.1016/j.matlet.2011.05.074 JN:MATERIALS LETTERS PY:2011
TC:4 AU: Pang, Xiaolu;Zhang, Jianlun;Gao, Kewei;Volinsky, Alex A.;
10:8:84 Study of structural and optical properties of Zn1-xAlxO nanoparticles
DOI:10.1016/j.mssp.2013.09.024 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Rahman, Atikur;Jayaganthan, R.;Chandra, Ramesh;
10:8:85 Synthesis, characterization and physicochemical properties of nanosized Zn/Mn oxides system
DOI:10.1016/j.jallcom.2010.04.180 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Selim, M. M.;Deraz, N. M.;Elshafey, O. I.;El-Asmy, A. A.;
10:8:86 Defect-induced reversible ferromagnetism in Fe-doped ZnO semiconductor: An electronic structure and magnetization study (vol 123, pg 678, 2010)
DOI:10.1016/j.matchemphys.2010.12.062 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:0 AU: Samariya, Arvind;Singhal, R. K.;Kumar, Sudhish;Xing, Y. T.;Alzamora, Mariella;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:8:87 Response to "Comments on 'Effect of annealing temperature on structure, magnetic properties and optical characteristics in Zn0.97Cr0.03O nanoparticle'" [Appl. Surf. Sci. 256 (2010) 3559]
DOI:10.1016/j.apsusc.2010.08.107 JN:APPLIED SURFACE SCIENCE PY:2010
TC:0 AU: Liu, Yang;Yang, Jinghai;Guan, Qingfeng;Yang, Lili;Zhang, Yongjun;
10:8:88 Effect of hydrogenation vs. re-heating on intrinsic magnetization of Co doped In2O3 (Retraction of vol 257, pg 585, 2010)
DOI:10.1016/j.apsusc.2014.03.001 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Samariya, A.;Singhal, R. K.;Kumar, Sudhish;Xing, Y. T.;Sharma, S. C.;Kumari, P.;Jain, D. C.;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, E.;
10:8:89 Rotation-field annealing effect on magnetoimpedance of Co-based amorphous ribbons
DOI:10.1016/j.jallcom.2010.08.110 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:2 AU: Jen, S. U.;Chiang, H. P.;Liu, H. D.;Chang, C. C.;
10:8:90 Room-temperature ferromagnetism in Ti1-xVxO2 nanocrystals synthesized from an organic-free and water-soluble precursor
DOI:10.1016/j.jallcom.2010.01.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:1 AU: Lue, Xujie;Li, Jiangtian;Mou, Xinliang;Wu, Jianjun;Ding, Shangjun;Huang, Fuqiang;Wang, Yaoming;Xu, Fangfang;
10:8:91 A mechanistic study of oleic acid-mediated solvothermal shape controllable preparation of zinc oxide nanostructures
DOI:10.1016/j.jallcom.2014.01.092 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Wang, Hongmei;Lian, Yuan;
10:8:92 Enhanced electron-mediated ferromagnetism in Co-doped ZnO nanowires
DOI:10.1063/1.3463412 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Choi, Eun-Ae;Lee, Woo-Jin;Chang, K. J.;
10:8:93 Electrical and magnetic properties of GaN codoped with Eu and Si
DOI:10.1063/1.3275508 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Wang, R.;Steckl, A. J.;Nepal, N.;Zavada, J. M.;
10:8:94 Study of defect-induced ferromagnetism in hydrogenated anatase TiO2:Co (Retraction of vol 107, 113916, 2010)
DOI:10.1063/1.4881078 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Singhal, R. K.;Samariya, Arvind;Kumar, Sudhish;Xing, Y. T.;Jain, D. C.;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:8:95 Study of electronic structure and magnetization correlations in hydrogenated and vacuum annealed Ni doped ZnO (Retraction of vol 109, 063907, 2011)
DOI:10.1063/1.4881079 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Singhal, R. K.;Sharma, S. C.;Kumari, P.;Kumar, Sudhish;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa;
10:8:96 Thermoluminescence behavior of KClXBr1-X: In mixed crystals exposed to gamma radiation
DOI:10.1016/j.jcrysgro.2014.04.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Saraee, Kh. Rezaee Ebrahim;Hosseini, S. A.;Faripour, H.;Faiez, M. R.;Abdi, M. R.;Soltani, N.;Khareiky, A. Aghay;
10:8:97 Defect-induced reversible ferromagnetism in hydrogenated ZnO:Co (vol 322, pg 2187, 2010)
DOI:10.1016/j.jmmm.2014.04.072 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:0 AU: Singhal, R. K.;Samariya, A.;Kumar, S.;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Saitovitch, E.;
10:8:98 Photocatalytic Characterization of Fe- and Cu-Doped ZnO Nanorods Synthesized by Cohydrolysis
DOI:10.1155/2013/958586 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Uhm, Young Rang;Han, Byung Sun;Rhee, Chang Kyu;Choi, Sun Ju;
10:8:99 Electronic structure and magnetization correlations in Ni doped ZnO (vol 65, pg 1485, 2011)
DOI:10.1016/j.matlet.2013.08.013 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Singhal, R. K.;Kumar, Sudhish;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Dolia, S. N.;Saitovitch, E.;
10:9:1:1 Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation
DOI:10.1016/j.actamat.2009.10.026 JN:ACTA MATERIALIA PY:2010
TC:43 AU: Pant, P.;Budai, J. D.;Narayan, J.;
10:9:1:2 Progress in the growth and characterization of nonpolar ZnO films
DOI:10.1007/s10853-012-6721-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:13 AU: Chen, Jin-Ju;Deng, Xue-Ran;Deng, Hong;
10:9:1:3 Mn concentration dependent structural and optical properties of a-plane Zn0.99-xMnxNa0.01O
DOI:10.1063/1.4846095 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Lu, B.;Zhou, T. T.;Ma, M. J.;Ye, Y. H.;Ye, Z. Z.;Lu, J. G.;Pan, X. H.;
10:9:1:4 Investigation of nonpolar (1 1 (2)over-bar 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.04.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:19 AU: Han, Seok Kyu;Kim, Jung-Hyun;Hong, Soon-Ku;Song, Jae-Ho;Song, Jung-Hoon;Lee, Jae Wook;Lee, Jeong Yong;Hong, Sun Ig;Yao, Takafumi;
10:9:1:5 Improving the uncommon (110) growing orientation of Al-doped ZnO thin films through sequential pulsed laser deposition
DOI:10.1016/j.tsf.2014.10.037 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Coman, Tudor;Ursu, Elena Laura;Nica, Valentin;Tiron, Vasile;Olaru, Mihaela;Cotofana, Corneliu;Dobromir, Marius;Coroaba, Adina;Dragos, Oana-Georgiana;Lupu, Nicoleta;Caltun, Ovidiu Florin;Ursu, Cristian;
10:9:1:6 Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition
DOI:10.1016/j.matlet.2012.12.003 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Peng, Chun-Yen;Wang, Wei-Lin;Ho, Yen-Teng;Tian, Jr-Sheng;Chang, Li;
10:9:1:7 Growth of large-area non-polar ZnO film without constraint to substrate using oblique-angle sputtering deposition
DOI:10.1016/j.jeurceramsoc.2012.11.030 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2013
TC:3 AU: Lai, Yi-Feng;Huang, Jun-Han;Chen, Yen-Chih;Liu, Chuan-Pu;Yang, Yaw-Wen;
10:9:1:8 ZnO thin film deposition using colliding plasma plumes and single plasma plume: Structural and optical properties
DOI:10.1063/1.4846115 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Gupta, Shyam L.;Thareja, Raj K.;
10:9:1:9 Morphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser deposition
DOI:10.1016/j.apsusc.2012.11.044 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Peng, Chun-Yen;Tian, Jr-Sheng;Wang, Wei-Lin;Ho, Yen-Teng;Chang, Li;
10:9:1:10 Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.3562162 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:2 AU: Han, Seok Kyu;Lee, Hyo Sung;Lim, Dong Seok;Hong, Soon-Ku;Yoon, Nara;Oh, Dong-Cheol;Ahn, Byung Jun;Song, Jung-Hoon;Yao, Takafumi;
10:9:1:11 Atomic structure of misfit dislocations in nonpolar ZnO/Al2O3 heterostructures
DOI:10.1063/1.3489687 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Zhou, H.;Chisholm, M. F.;Pant, P.;Chang, H. J.;Gazquez, J.;Pennycook, S. J.;Narayan, J.;
10:9:1:12 Growth and characterizations of nonpolar [11-20] ZnO on [100] (La,Sr)(Al,Ta)O-3 substrate by chemical vapor deposition
DOI:10.1016/j.jcrysgro.2009.12.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Chou, Mitch M. C.;Hang, Da-Ren;Wang, Shih Chuan;Chen, Chenlong;Lee, Chun-Yu;
10:9:1:13 Investigation of initial growth and very thin (11(2)over-bar0) ZnO films by cross-sectional and plan-view transmission electron microscopy
DOI:10.1016/j.apsusc.2009.10.018 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Lee, Jae Wook;Han, Seok Kyu;Hong, Soon-Ku;Lee, Jeong Yong;
10:9:1:14 Characterization of a-plane orientation ZnO film grown on GaN/Sapphire template by pulsed laser deposition
DOI:10.1016/j.apsusc.2010.02.072 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Han, Xiangyun;Dai, Jiangnan;Yu, Chenhui;Wu, Zhihao;Chen, Changqing;Gao, Yihua;
10:9:1:15 Realization of non c-axis oriented ZnO thin films on quartz through Mn-Li co-doping
DOI:10.1016/j.matlet.2013.06.103 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Lu, Bin;Zhou, Tingting;Ma, Mengjie;Ye, Chunli;Pan, Xinhua;Lu, Jianguo;Ye, Zhizhen;
10:9:1:16 Epitaxial growth of nonpolar m-plane ZnO (10-10) on large-size LiGaO2 (100) substrates
DOI:10.1016/j.tsf.2011.01.343 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Chou, Mitch M. C.;Hang, Da-Ren;Chen, Chenlong;Liao, Yen-Hsiang;
10:9:1:17 Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2011.04.093 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Han, Seok Kyu;Hong, Soon-Ku;Lee, Jae Wook;Kim, Jae Goo;Jeong, Myoungho;Lee, Jeong Yong;Hong, Sun Ig;Park, Jin Sub;Ihm, Young Eon;Ha, Jun-Seok;Yao, Takafumi;
10:9:1:18 Anisotropic strain relaxation and abnormal zigzag shape planar defects in nonpolar a-GaN grown by metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.09.084 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Kong, Bo Hyun;Cho, Hyung Koun;Song, Keun Man;Yoon, Dea Ho;
10:9:1:19 Nonpolar a-plane ZnO growth and nucleation mechanism on (100) (La, Sr)(Al, Ta)O-3 substrate
DOI:10.1016/j.matchemphys.2010.09.057 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Chou, Mitch M. C.;Hang, Da-Ren;Chen, Chenlong;Wang, Shih Chuan;Lee, Chun-Yu;
10:9:1:20 The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition
DOI:10.1063/1.4759032 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Peng, Chun-Yen;Liu, Yuan-An;Wang, Wei-Lin;Tian, Jr-Sheng;Chang, Li;
10:9:1:21 Effect of growth temperature on a-plane ZnO formation on r-plane sapphire
DOI:10.1116/1.3549141 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:2 AU: Peng, Chun-Yen;Tian, Jr-Sheng;Wang, Wei-Lin;Ho, Yen-Teng;Chuang, Shu-Chang;Chu, Ying-Hao;Chang, Li;
10:9:1:22 Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition
DOI:10.1007/s11664-011-1511-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:4 AU: Dai, J. N.;Han, X. Y.;Wu, Z. H.;Fang, Y. Y.;Xiong, H.;Tian, Y.;Yu, C. H.;He, Q. H.;Chen, C. Q.;
10:9:1:23 Effect of vicinal off-cut substrates on the basal stacking fault density in nonpolar a-GaN epilayers
DOI:10.1016/j.jcrysgro.2011.06.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:0 AU: Kong, Bo Hyun;Cho, Hyung Koun;Song, Keun Man;Yoon, Dea Ho;
10:9:1:24 Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition
DOI:10.1007/s00339-010-5925-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:5 AU: Alauddin, Md;Song, Jae Kyu;Park, Seung Min;
10:9:1:25 Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition
DOI:10.1116/1.3388889 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:2 AU: Jung, Mina;Chang, Jiho;Lee, Hyunjae;Ha, Jun-seok;Park, Jin-sub;Park, Seungwhan;Fujii, Katsushi;Yao, Takafumi;Kil, Gyung-suk;Lee, Seogwoo;Cho, Myungwhan;Whang, Sungmin;Seo, Yong-gon;
10:9:1:26 Realization of non-polar ZnO (1 1 (2)over-bar 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.04.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Zhang, T. C.;Mei, Z. X.;Kuznetsov, A. Yu.;Du, X. L.;
10:9:2:1 Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates
DOI:10.1063/1.3481078 JN:APPLIED PHYSICS LETTERS PY:2010
TC:39 AU: Chauveau, J. -M.;Teisseire, M.;Kim-Chauveau, H.;Deparis, C.;Morhain, C.;Vinter, B.;
10:9:2:2 Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
DOI:10.1103/PhysRevB.84.165312 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Beaur, L.;Bretagnon, T.;Gil, B.;Kavokin, A.;Guillet, T.;Brimont, C.;Tainoff, D.;Teisseire, M.;Chauveau, J. -M.;
10:9:2:3 Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
DOI:10.1063/1.3565969 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Beaur, L.;Bretagnon, T.;Brimont, C.;Guillet, T.;Gil, B.;Tainoff, D.;Teisseire, M.;Chauveau, J-M;
10:9:2:4 Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells
DOI:10.1103/PhysRevB.86.045318 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Lange, M.;Kupper, J.;Dietrich, C. P.;Brandt, M.;Stoelzel, M.;Benndorf, G.;Lorenz, M.;Grundmann, M.;
10:9:2:5 Built-in electric field in ZnO based semipolar quantum wells grown on (10(1)over-bar2) ZnO substrates
DOI:10.1063/1.4851116 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Chauveau, J. -M.;Xia, Y.;Ben Taazaet-Belgacem, I.;Teisseire, M.;Roland, B.;Nemoz, M.;Brault, J.;Damilano, B.;Leroux, M.;Vinter, B.;
10:9:2:6 Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
DOI:10.1063/1.3624924 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Tabares, G.;Hierro, A.;Vinter, B.;Chauveau, J. -M.;
10:9:2:7 Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition
DOI:10.1063/1.3488898 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Ko, T. S.;Lu, T. C.;Zhuo, L. F.;Wang, W. L.;Liang, M. H.;Kuo, H. C.;Wang, S. C.;Chang, Li;Lin, D. Y.;
10:9:2:8 Structure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition
DOI:10.1063/1.4767462 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Li, Y.;Pan, X. H.;Zhang, Y. Z.;He, H. P.;Jiang, J.;Huang, J. Y.;Ye, C. L.;Ye, Z. Z.;
10:9:2:9 Core-shell multi-quantum wells in ZnO/ZnMgO nanowires with high optical efficiency at room temperature
DOI:10.1088/0957-4484/23/8/085705 JN:NANOTECHNOLOGY PY:2012
TC:14 AU: Thierry, R.;Perillat-Merceroz, G.;Jouneau, P. H.;Ferret, P.;Feuillet, G.;
10:9:2:10 The contribution of quantum confinement to optical anisotropy of a-plane Cd0.06Zn0.94O/ZnO quantum wells
DOI:10.1063/1.4707384 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Matsui, Hiroaki;Tabata, Hitoshi;
10:9:2:11 Probing carrier populations in ZnO quantum wells by screening of the internal electric fields
DOI:10.1103/PhysRevB.87.035309 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Chernikov, A.;Schaefer, S.;Koch, M.;Chatterjee, S.;Laumer, B.;Eickhoff, M.;
10:9:2:12 Structural and optical properties of non-polar ZnO/Zn0.81Mg0.19O multiple quantum wells grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
DOI:10.1007/s00339-013-7865-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Chen, W.;Pan, X. H.;Zhang, H. H.;Ding, P.;He, H. P.;Huang, J. Y.;Lu, B.;Ye, Z. Z.;
10:9:2:13 In-plane light polarization in nonpolar m-plane CdxZn1-xO/ZnO quantum wells
DOI:10.1063/1.3603931 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Matsui, Hiroaki;Tabata, Hitoshi;
10:9:2:14 Engineering of optical polarization based on electronic band structures of A-plane ZnO layers under biaxial strains
DOI:10.1063/1.4895842 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Matsui, Hiroaki;Hasuike, Noriyuki;Harima, Hiroshi;Tabata, Hitoshi;
10:9:2:15 Band alignment and excitonic localization of ZnO/Cd(0.08)Zn(0.92)O quantum wells
DOI:10.1063/1.3359720 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Matsui, Hiroaki;Osone, Takamasa;Tabata, Hitoshi;
10:9:2:16 Comparison of structural and optical properties of polar and non-polar ZnO/Zn0.9Mg0.1O MQWs fabricated on sapphire substrates by pulsed laser deposition
DOI:10.1016/j.matlet.2013.08.006 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Li, Yang;Pan, Xinhua;Jiang, Jie;He, Haiping;Huang, Jingyun;Ye, Zhizhen;
10:9:2:17 Lattice strains and polarized luminescence in homoepitaxial growth of a-plane ZnO
DOI:10.1063/1.4769036 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Matsui, Hiroaki;Tabata, Hitoshi;
10:9:2:18 Growth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2)
DOI:10.1016/j.matlet.2014.08.132 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Shih, Yi-Sen;Lin, Pei-Yin;Chen, Jr-Yu;Chang, Li;
10:9:2:19 Effects of strain on the valence band structure and exciton-polariton energies in ZnO
DOI:10.1103/PhysRevB.88.235210 JN:Algarabel, Pedro/K-8583-2014; Ibarra, Manuel Ricardo/K-1150-2014; Rodriguez Fernandez, Jesus/L-7960-2014;Morellon, Luis/0000-0003-3724-508X; Marcano Aguado,;Noelia/0000-0002-5331-9758; PY:PHYSICAL REVIEW B TC:arabel, Pedro/0000-0002-4698-3378;;Ibarra, Manuel Ricardo/0000-0003-0681-8260;;0;0;0;0;0;1098-0121;WOS:000332161300004;;;J;Minar, Jiri;Gremaud, Benoit;From antiferromagnetic ordering to magnetic textures in the;two-dimensional Fermi-Hubbard model with synthetic spin-orbit;interactions;PHYSICAL REVIEW B;88;23;235130;10.1103/PhysRevB.88.235130;DEC 30 2013;2013;We study the interacting Fermi-Hubbard model in two spatial dimensions;with synthetic gauge coupling of the spin-orbit Rashba type, at;half-filling. Using real-space mean-field theory, we numerically;determine the phase as a function of the interaction strength for;different values of the gauge-field parameter. For a fixed value of the;gauge field, we observe that when the strength of the repulsive;interaction is increased, the system enters into an antiferromagnetic;phase, then undergoes a first-order phase transition to a noncollinear;magnetic phase. Depending on the gauge-field parameter, this phase;further evolves to the one predicted from the effective Heisenberg model;obtained in the limit of large interaction strength. We explain the;presence of the antiferromagnetic phase at small interaction from the;computation of the spin-spin susceptibility, which displays a divergence;at low temperatures for the antiferromagnetic ordering. We discuss, how;the divergence is related to the nature of the underlying Fermi;surfaces. Finally, the fact that the first-order phase transitions for;different gauge-field parameters occur at unrelated critical interaction;strengths arises from a Hofstadter-like situation, i.e., for different;magnetic phases, the mean-field Hamiltonians have different;translational symmetries.;1;0;0;0;1;1098-0121;WOS:000332163500001;;;J;Rochal, S. B.;Lorman, V. L.;Yuzyuk, Yu. I.;Two-dimensional elasticity determines the low-frequency dynamics of;single-and double-walled carbon nanotubes;PHYSICAL REVIEW B;88;23;235435;10.1103/PhysRevB.88.235435;DEC 30 2013;2013;We develop a continuous theory of low-frequency dynamics for nanotubes;with walls constituted by singleatom monolayer, the topological;elasticity of which is not related to its vanishing macroscopic;thickness. The applicability region of the theory proposed includes all;truly two-dimensional materials such as graphene and MoS2. New;comprehensive interpretation and analytical expressions for;low-frequency modes in single-walled carbon nanotube (SWCNT) are given.;The theory unambiguously relates the radial breathing modes of SWCNT and;breathinglike modes of the double-walled carbon nanotube (DWCNT). The;existing Raman data on DWCNTs are fitted better than in the frame of;previous models.;Yuzyuk, Yuri/A-1285-2009;0;0;0;0;0;1098-0121;WOS:000332163500006;;;J;Wagner, Markus R.;Callsen, Gordon;Reparaz, Juan S.;Kirste, Ronny;Hoffmann, Axel;Rodina, Anna V.;Schleife, Andre;Bechstedt, Friedhelm;Phillips, Matthew R.; AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Bakr, M.;Souliou, S. M.;Blanco-Canosa, S.;Zegkinoglou, I.;Gretarsson, H.;Strempfer, J.;Loew, T.;Lin, C. T.;Liang, R.;Bonn, D. A.;Hardy, W. N.;Keimer, B.;Le Tacon, M.;Lattice dynamical signature of charge density wave formation in;underdoped YBa2Cu3O6+x;PHYSICAL REVIEW B;88;21;214517;10.1103/PhysRevB.88.214517;DEC 31 2013;2013;We report a detailed Raman scattering study of the lattice dynamics in;detwinned single crystals of the underdoped high-temperature;superconductor YBa2Cu3O6+x (x = 0.75, 0.6, 0.55, and 0.45). Whereas at;room temperature the phonon spectra of these compounds are similar to;that of optimally doped YBa2Cu3O6.99, additional Raman-active modes;appear upon cooling below similar to 170-200Kin underdoped crystals. The;temperature dependence of these new features indicates that they are;associated with the incommensurate charge density wave state recently;discovered using synchrotron x-ray scattering techniques on the same;single crystals. Raman scattering thus has the potential to explore the;evolution of this state under extreme conditions.;Zegkinoglou, Ioannis/H-2343-2013; Le Tacon, Mathieu/D-8023-2011;Le Tacon, Mathieu/0000-0002-5838-3724;6;0;0;0;6;1098-0121;WOS:000332165200002;;;J;Benedicto, Jessica;Centeno, Emmanuel;Polles, Remi;Moreau, Antoine;Ultimate resolution of indefinite metamaterial flat lenses;PHYSICAL REVIEW B;88;24;245138;10.1103/PhysRevB.88.245138;DEC 31 2013;2013;We propose an approach allowing a systematic optimization of lenses;based on hyperbolic metamaterials. The lensing properties of these;highly anisotropic materials are summed up in a complex effective index;extracted from the complex dispersion relation. The analytical;expression of this effective index in the homogenization regime or its;direct computation from the Bloch band diagram in the resonant regime;leads to hyperbolic metamaterials that outperform the state-of-art flat;lenses. We show that feasible metal-dielectric multilayers provide;superresolved images for visible light (around 400 nm) even when fully;taking absorption into account.;0;0;0;0;0;1098-0121;WOS:000332166700001;;;J;Biswas, P. K.;Amato, A.;Baines, C.;Khasanov, R.;Luetkens, H.;Lei, Hechang;Petrovic, C.;Morenzoni, E.;Low superfluid density and possible multigap superconductivity in the;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;88;22;224515;10.1103/PhysRevB.88.224515;DEC 31 2013;2013;The magnetic penetration depth lambda as a function of temperature in;Bi4O4S3 was studied by muon-spin-spectroscopy measurements. The;superfluid density of Bi4O4S3 is found to be very low. The dependence of;lambda (2) on temperature possibly suggests the existence of two;s-wave-type energy gaps with the zero-temperature values of 0.93 (3) and;0.09 (4) meV. The upturn in the temperature dependence of the upper;critical field close to T-c further supports multigap superconductivity;in Bi4O4S3. The presence of two superconducting energy gaps is;consistent with theoretical and other experimental studies. However, a;single-gap s-wave model fit with a gap of 0.88 (2) meV cannot be ruled;out completely. The value of lambda(T) at T = 0 K is estimated to be;lambda(0) = 861 (17) nm, one of the largest of all known layered;superconductors, reflecting a very low superfluid density.;Luetkens, Hubertus/G-1831-2011;4;0;0;0;4;1098-0121;WOS:000332166200005;;;J;Cao, G.;Qi, T. F.;Li, L.;Terzic, J.;Cao, V. S.;Yuan, S. J.;Tovar, M.;Murthy, G.;Kaul, R. K.;Evolution of magnetism in the single-crystal honeycomb iridates;(Na1-xLix)(2)IrO3;PHYSICAL REVIEW B;88;22;220414;10.1103/PhysRevB.88.220414;DEC 31 2013;2013;We report the successful synthesis of single crystals of the layered;iridate (Na1-xLix)(2)IrO3, 0 <= x <= 0.9, and a thorough study of its;structural, magnetic, thermal, and transport properties. This compound;allows a controlled interpolation between Na2IrO3 and Li2IrO3, while;maintaining the quantum magnetism of the honeycomb Ir4+ planes. The;measured phase diagram demonstrates a suppression of the Neel;temperature T-N at an intermediate x, indicating that the magnetic;orders in Na2IrO3 and Li2IrO3 are distinct. X-ray data show that for x;approximate to 0.7, when T-N is suppressed the most, the honeycomb;structure is least distorted, leading to the speculation that at this;intermediate doping of the material is closest to the spin liquid that;has been sought after in Na2IrO3 and Li2IrO3. By analyzing our magnetic;data with a single-ion theoretical model we also show that the trigonal;splitting on the Ir4+ ions changes sign from Na2IrO3 to Li2IrO3.;8;0;0;0;8;1098-0121;WOS:000332166200001;;;J;Farr, Warrick G.;Creedon, Daniel L.;Goryachev, Maxim;Benmessai, Karim;Tobar, Michael E.;Ultrasensitive microwave spectroscopy of paramagnetic impurities in;sapphire crystals at millikelvin temperatures;PHYSICAL REVIEW B;88;22;224426;10.1103/PhysRevB.88.224426;DEC 31 2013;2013;Progress in the emerging field of engineered quantum systems requires;the development of devices that can act as quantum memories. The;realization of such devices by doping solid-state cavities with;paramagnetic ions imposes a tradeoff between ion concentration and;cavity coherence time. Here, we investigate an alternative approach;involving interactions between photons and naturally occurring impurity;ions in ultrapure crystalline microwave cavities exhibiting;exceptionally high quality factors. We implement a hybrid whispering;gallery/electron spin resonance method to perform rigorous spectroscopy;of an undoped single-crystal sapphire resonator over the frequency range;8-19 GHz, and at external applied DC magnetic fields up to 0.9 T.;Measurements of high-purity sapphire cooled close to 100 mK reveal the;presence of Fe3+, Cr3+, and V2+ impurities. A host of electron;transitions are measured and identified, including the two-photon;classically forbidden quadrupole transition (Delta m(s) = 2) for Fe3+,;as well as hyperfine transitions of V2+.;Tobar, Michael/C-9763-2009; Creedon, Daniel/A-8772-2010; Goryachev, Maxim/K-5851-2013;Creedon, Daniel/0000-0003-2912-3381; Goryachev,;Maxim/0000-0002-0257-4054;5;0;0;0;5;1098-0121;WOS:000332166200004;;;J;Joseph, B.;Bendele, M.;Simonelli, L.;Maugeri, L.;Pyon, S.;Kudo, K.;Nohara, M.;Mizokawa, T.;Saini, N. L.;Local structural displacements across the structural phase transition in;IrTe2: Order-disorder of dimers and role of Ir-Te correlations;PHYSICAL REVIEW B;88;22;224109;10.1103/PhysRevB.88.224109;DEC 31 2013;2013;We have studied local structure of IrTe2 by Ir L-3-edge extended x-ray;absorption fine structure (EXAFS) measurements as a function of;temperature to investigate origin of the observed structural phase;transition at T-s similar to 270 K. The EXAFS results show an appearance;of longer Ir-Te bond length (Delta R similar to 0.05 angstrom) at T <;T-s. We have found Ir-Ir dimerization, characterized by distinct Ir-Ir;bond lengths (Delta R similar to 0.13 angstrom), existing both above and;below T-s. The results suggest that the phase transition in IrTe2 should;be an order-disorder-like transition of Ir-Ir dimers assisted by Ir-Te;bond correlations, thus indicating important role of the interaction;between the Ir 5d and Te 5p orbitals in this transition.;KUDO, Kazutaka/B-1468-2011; NOHARA, Minoru/B-1476-2011;3;0;0;0;3;1098-0121;WOS:000332166200003;;;J;Kobayashi, Keita;Machida, Masahiko;Ota, Yukihiro;Nori, Franco;Massless collective excitations in frustrated multiband superconductors;PHYSICAL REVIEW B;88;22;224516;10.1103/PhysRevB.88.224516;DEC 31 2013;2013;We study collective excitations in three- and four-band superconductors;with interband frustration, which causes neither 0 nor pi interband;phases in the superconducting state. Using a low-energy spin Hamiltonian;originating from a multiband tight-binding model, we find that mass;reduction of a Leggett mode occurs in a wide parameter region of this;four-band system. As a limiting case, we have a massless Leggett mode.;This massless mode is related to the fact that the mean-field energy;does not depend on a relative phase of superconducting order parameters.;In other words, we find a link of the massless mode with a degeneracy;between a time-reversal-symmetry-breaking state (neither 0 nor pi;phases) and a time-reversal-symmetric state (either 0 or pi phases).;Therefore, the mass of collective modes characterizes well the;time-reversal symmetry in frustrated multiband superconductors.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332166200006;;;J;Ohtsubo, Yoshiyuki;Yaji, Koichiro;Hatta, Shinichiro;Okuyama, Hiroshi;Aruga, Tetsuya;Two-dimensional states localized in subsurface layers of Ge(111);PHYSICAL REVIEW B;88;24;245310;10.1103/PhysRevB.88.245310;DEC 31 2013;2013;The origin of the two-dimensional surface states localized in subsurface;regions of the Ge(111) substrate has been studied by;density-functional-theory calculations, which were compared with the;experimental results of angle-resolved photoelectron spectroscopy. For;the Bi/Ge(111)-(root 3 x root 3)R30 degrees, Br/Ge(111)-(1x1), and;Tl/Ge(111)-(1x1) surfaces, we found that the surface states are;classified into three groups. The energy dispersion and the orbital;character for each band implies the relationship between the subsurface;states and the bulk heavy-hole, light-hole, and spin-orbit split-off;bands. These results indicate that the subsurface states originate from;the bulk bands that are perturbed due to the truncation of the;three-dimensional periodicity at the surface.;Okuyama, Hiroshi/H-7570-2014;1;0;0;0;1;1098-0121;WOS:000332166700002;;;J;Oiwake, M.;Ootsuki, D.;Noji, T.;Hatakeda, T.;Koike, Y.;Horio, M.;Fujimori, A.;Saini, N. L.;Mizokawa, T.;Electronic structure and phase separation of superconducting and;nonsuperconducting KxFe2-ySe2 revealed by x-ray photoemission;spectroscopy;PHYSICAL REVIEW B;88;22;224517;10.1103/PhysRevB.88.224517;DEC 31 2013;2013;We have investigated the electronic structure of superconducting (SC);and nonsuperconducting (non-SC) KxFe2-ySe2 using x-ray photoemission;spectroscopy (XPS). The spectral shape of the Fe 2p XPS is found to;depend on the amount of Fe vacancies. The Fe 2p(3/2) peak of the SC and;non-SC Fe-rich samples is accompanied by a shoulder structure on the;lower binding energy side, which can be attributed to the metallic phase;embedded in the Fe2+ insulating phase. The absence of the shoulder;structure in the non-SC Fe-poor sample allows us to analyze the Fe 2p;spectra using a FeSe4 cluster model. The Fe 3d-Se 4p charge-transfer;energy of the Fe2+ insulating phase is found to be similar to 2.3 eV;which is smaller than the Fe 3d-Fe 3d Coulomb interaction of similar to;3.5 eV. This indicates that the Fe2+ insulating state is the;charge-transfer type in the Zaanen-Sawatzky-Allen scheme. We also find a;substantial change in the valence-band XPS as a function of Fe content;and temperature. The metallic state at the Fermi level is seen in the SC;and non-SC Fe-rich samples and tends to be enhanced with cooling in the;SC sample.;0;0;0;0;0;1098-0121;WOS:000332166200007;;;J;Park, Keeseong;Nomura, Yusuke;Arita, Ryotaro;Llobet, Anna;Louca, Despina;Local strain and anharmonicity in the bonding of Bi2Se3-xTex topological;insulators;PHYSICAL REVIEW B;88;22;224108;10.1103/PhysRevB.88.224108;DEC 31 2013;2013;Using neutron diffraction and the pair density function analysis, the;local atomic structure of the three-dimensional Bi2Se3-xTex (x = 0, 1,;2, and 3) topological insulator is investigated. The substitution of Te;for Se in Bi2Se3-xTex (x = 0, 1, 2, and 3) is not random and its;preferred site is at the edges of the quintuple layer. This generates a;local strain due to the atom size mismatch between Se and Te. The site;preference is surprising given that the Bi to chalcogen bonds are;strongest when the ions are at the edges than in the middle layer. The;(Se/Te) atoms in the middle sublayer of the quintuple are coupled more;softly to the Bi atoms than those of the edges and have lower Debye;temperatures. This suggests that the atomic properties within the;quintuple layer are different than those at the edges. Additionally, the;results from band structure and density of state calculations are;reported to show the dependence of doping and temperature.;Arita, Ryotaro/D-5965-2012; Llobet, Anna/B-1672-2010;Arita, Ryotaro/0000-0001-5725-072X;;0;0;0;0;0;1098-0121;WOS:000332166200002;;;J;Pogorelov, Y. G.;Santos, M. C.;Loktev, V. M.;Impurity effects on electronic transport in ferropnictide;superconductors;PHYSICAL REVIEW B;88;22;224518;10.1103/PhysRevB.88.224518;DEC 31 2013;2013;Effects of impurities and disorder on transport properties by electronic;quasiparticles in superconducting iron pnictides are theoretically;considered. The most prominent new features compared to the case of pure;material should appear at high enough impurity concentration when a;specific narrow band of conducting quasiparticle states can develop;within the superconducting gap, around the position of localized;impurity level by a single impurity center. The predicted specific;threshold effects in the frequency-dependent optical conductivity and;temperature-dependent thermal conductivity and also in Seebeck and;Peltier coefficients can have interesting potentialities for practical;applications.;0;0;0;0;0;1098-0121;WOS:000332166200008;;;J;Reich, K. V.;Chen, T.;Efros, Al. L.;Shklovskii, B. I.;Photoluminescence in arrays of doped semiconductor nanocrystals;PHYSICAL REVIEW B;88;24;245311;10.1103/PhysRevB.88.245311;DEC 31 2013;2013;We study the dependence of the quantum yield of photoluminescence of a;dense, periodic array of semiconductor nanocrystals (NCs) on the level;of doping and NC size. Electrons introduced to NCs via doping quench;photoluminescence by the Auger process, so that practically only NCs;without electrons contribute to the photoluminescence. Computer;simulation and analytical theory are used to find a fraction of such;empty NCs as a function of the average number of donors per NC and NC;size. For an array of small spherical NCs, the quantization gap between;1S and 1P levels leads to transfer of electrons from NCs with large;number of donors to those without donors. As a result, empty NCs become;extinct, and photoluminescence is quenched abruptly at an average number;of donors per NC close to 1.8. The relative intensity of;photoluminescence is shown to correlate with the type of hopping;conductivity of an array of NCs.;2;0;0;0;2;1098-0121;WOS:000332166700003;;;J;Rousse, Gwenaelle;Rodriguez-Carvajal, Juan;Wurm, Calin;Masquelier, Christian;Spiral magnetic structure in the iron diarsenate LiFeAs2O7: A neutron;diffraction study;PHYSICAL REVIEW B;88;21;214433;10.1103/PhysRevB.88.214433;DEC 31 2013;2013;The magnetic structure of LiFeAs2O7 (monoclinic, space group C2) has;been solved using neutron powder diffraction. This compound presents an;antiferromagnetic behavior characterized by a long-range ordering;observed in the neutron diffraction patterns below the Neel temperature;(T-N = 35 K). The magnetic structure is found to be incommensurate with;respect to the nuclear structure, the magnetic peaks being indexed with;a propagation vector k = (0.709, 0, 0.155). The magnetic moments form a;general spiral (helical-cycloidal) arrangement with a constant magnetic;moment of 4.21 mu B. The magnetic structure is discussed in terms of;super-super exchange interactions involving two oxygen atoms belonging;to an AsO4 tetrahedron, and compared with the magnetic structure of the;di-phosphate analogue LiFeP2O7. The presence of triangular super-super;exchange paths is believed to be at the origin of this incommensurate;magnetic structure. The potential of LiFeAs2O7 as a possible;multiferroic material is discussed.;Rodriguez-Carvajal, Juan/C-4362-2008;Rodriguez-Carvajal, Juan/0000-0001-5582-2632;1;0;0;0;1;1098-0121;WOS:000332165200001;;;J;Smith, Peter M.;Kennett, Malcolm P.;Disorder effects on superconducting tendencies in the checkerboard;Hubbard model;PHYSICAL REVIEW B;88;21;214518;10.1103/PhysRevB.88.214518;DEC 31 2013;2013;The question of whether spatially inhomogeneous hopping in the two;dimensional Hubbard model can lead to enhancement of superconductivity;has been tackled by a number of authors in the context of the;checkerboard Hubbard model (CHM). We address the effects of disorder on;superconducting properties of the CHM by using exact diagonalization;calculations for both potential and hopping disorder. We characterize;the superconducting tendencies of the model by focusing on the;pair-binding energy, the spin gap, and d-wave pairing order parameter.;We find that superconducting tendencies, particularly the pair-binding;energy, are more robust to disorder when there is inhomogeneous hopping;than for the uniform Hubbard model. We also study all possible staggered;potentials for an eight-site CHM cluster and relate the behavior of;these configurations to the disordered system.;Kennett, Malcolm/I-2898-2012;1;0;0;0;1;1098-0121;WOS:000332165200003;;;J;Cortes-Huerto, R.;Sondon, T.;Saul, A.;Role of temperature in the formation and growth of gold monoatomic;chains: A molecular dynamics study;PHYSICAL REVIEW B;88;23;235438;10.1103/PhysRevB.88.235438;DEC 31 2013;2013;The effect of temperature on the formation and growth of monoatomic;chains is investigated by extensive molecular dynamics simulations using;a semiempirical potential based on the second-moment approximation to;the tight-binding Hamiltonian. Gold nanowires, with an aspect ratio of;similar to 13 and a cross section of similar to 1 nm(2), are stretched;at a rate of 3 m/s in the range of temperatures 5-600 K with 50 initial;configurations per temperature. A detailed study on the probability to;form monoatomic chains (MACs) is presented. Two domains are apparent in;our simulations: one at T < 100 K, where MACs develop from crystalline;disorder at the constriction, and the other at T > 100 K, where MACs;form as a consequence of plastic deformation of the nanowire. Our;results show that the average length of the formed MACs maximizes at T =;150 K, which is supported by simple energy arguments.;0;0;0;0;0;1098-0121;WOS:000332166400004;;;J;Despoja, V.;Loncaric, I.;Mowbray, D. J.;Marusic, L.;Quasiparticle spectra and excitons of organic molecules deposited on;substrates: G(0)W(0)-BSE approach applied to benzene on graphene and;metallic substrates;PHYSICAL REVIEW B;88;23;235437;10.1103/PhysRevB.88.235437;DEC 31 2013;2013;We present an alternative methodology for calculating the quasiparticle;energy, energy loss, and optical spectra of a molecule deposited on;graphene or a metallic substrate. To test the accuracy of the method it;is first applied to the isolated benzene (C6H6) molecule. The;quasiparticle energy levels and especially the energies of the benzene;excitons (triplet, singlet, optically active and inactive) are in very;good agreement with available experimental results. It is shown that the;vicinity of the various substrates [pristine/doped graphene or (jellium);metal surface] reduces the quasiparticle highest occupied molecular;orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap by an amount;that slightly depends on the substrate type. This is consistent with the;simple image theory predictions. It is even shown that the substrate;does not change the energy of the excitons in the isolated molecule. We;prove (in terms of simple image theory) that energies of the excitons;are indeed influenced by two mechanisms which cancel each other. We;demonstrate that the benzene singlet optically active (E-1u) exciton;couples to real electronic excitations in the substrate. This causes it;substantial decay, such as Gamma approximate to 174 meV for pristine;graphene and Gamma approximate to 362 meV for metal surfaces as the;substrate. However, we find that doping graphene does not influence the;E-1u exciton decay rate.;Mowbray, Duncan/A-5531-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Loncaric, Ivor/J-6677-2014;Mowbray, Duncan/0000-0002-8520-0364; Loncaric, Ivor/0000-0002-5554-4641;2;0;0;0;2;1098-0121;WOS:000332166400003;;;J;Dutt, Prasenjit apq;Le Hur, Karyn;Strongly correlated thermoelectric transport beyond linear response;PHYSICAL REVIEW B;88;23;235133;10.1103/PhysRevB.88.235133;DEC 31 2013;2013;We investigate nonlinear thermoelectric transport through quantum;impurity systems with strong on-site interactions. We show that the;steady-state transport through interacting quantum impurities in contact;with electron reservoirs at significantly different temperatures can be;captured by an effective-equilibrium density matrix, expressed compactly;in terms of the Lippmann-Schwinger operators of the system. In addition,;the reservoirs can be maintained at arbitrary chemical potentials. The;interplay between the temperature gradient and bias voltage gives rise;to a nontrivial breaking of particle-hole symmetry in the strongly;correlated regime, manifest in the Abrikosov-Suhl localized electron;resonance. This purely many-body effect, which is in agreement with;experimental results, is beyond the purview of mean-field arguments.;2;0;0;0;2;1098-0121;WOS:000332166400001;;;J;Li, Yunpu;King, Jonathan P.;Reimer, Jeffrey A.;Meriles, Carlos A.;Near-band-gap photoinduced nuclear spin dynamics in semi-insulating;GaAs: Hyperfine- and quadrupolar-driven relaxation;PHYSICAL REVIEW B;88;23;235211;10.1103/PhysRevB.88.235211;DEC 31 2013;2013;Understanding and manipulating spin polarization and transport in the;vicinity of semiconductor-hosted defects is a problem of present;technological and fundamental importance. Here, we use high-field;magnetic resonance to monitor the relaxation dynamics of spin-3/2 nuclei;in semi-insulating GaAs. Our experiments benefit from the conditions;created in the limit of low illumination intensities, where intermittent;occupation of the defect site by photoexcited electrons leads to;electric field gradient fluctuations and concomitant spin relaxation of;the neighboring quadrupolar nuclei. We find indication of a;heterogeneous distribution of polarization, governed by different;classes of defects activated by either weak or strong laser excitation.;Upon application of a train of light pulses of variable repetition rate;and on/off ratio, we uncover an intriguing regime of mesoscale nuclear;spin diffusion restricted by long-range, nonuniform electric field;gradients. Given the slow time scale governing nuclear spin evolution,;such optically induced polarization patterns could be exploited as a;contrast mechanism to expose dark lattice defects or localized charges;with nanoscale resolution.;0;0;0;0;0;1098-0121;WOS:000332166400002;;;J;Adolff, Christian F.;Haenze, Max;Vogel, Andreas;Weigand, Markus;Martens, Michael;Meier, Guido;Self-organized state formation in magnonic vortex crystals;PHYSICAL REVIEW B;88;22;224425;10.1103/PhysRevB.88.224425;DEC 30 2013;2013;We study the polarization-state formation in magnonic vortex crystals;via scanning transmission x-ray microscopy. Self-organized state;formation is observed by adiabatic reduction of a high-frequency field;excitation. The emerging polarization patterns are shown to depend on;the frequency of excitation and the strength of the dipolar interaction;between the elements. In spite of the complexity of the investigated;system, global order caused by local interactions creates polarization;states with a high degree of symmetry. A fundamental dipole model and;coupled equations of motion are adopted to analytically describe the;experimental results. The emerging states can be predicted by a;fundamental stability criterion based on the excitability of eigenmodes;in the crystal. Micromagnetic simulations give additional insight into;the underlying processes.;2;0;0;0;2;1098-0121;WOS:000332162300008;;;J;Berridge, A. M.;Green, A. G.;Nonequilibrium conductivity at quantum critical points;PHYSICAL REVIEW B;88;22;220512;10.1103/PhysRevB.88.220512;DEC 30 2013;2013;Quantum criticality provides an important route to revealing universal;nonequilibrium behavior. A canonical example of a critical point is the;Bose-Hubbard model, which we study under the application of an electric;field. A Boltzmann transport formalism and is an element of expansion;are used to obtain the nonequilibrium conductivity and current noise.;This approach allows us to explicitly identify how a universal;nonequilibrium steady state is maintained, by identifying the;rate-limiting step in balancing Joule heating and dissipation to a heat;bath. It also reveals that the nonequilibrium distribution function is;very far from a thermal distribution.;1;0;0;0;1;1098-0121;WOS:000332162300004;;;J;Bojesen, Troels Arnfred;Babaev, Egor;Sudbo, Asle;Time reversal symmetry breakdown in normal and superconducting states in;frustrated three-band systems;PHYSICAL REVIEW B;88;22;220511;10.1103/PhysRevB.88.220511;DEC 30 2013;2013;We discuss the phase diagram and phase transitions in U(1) x Z(2);three-band superconductors with broken time reversal symmetry. We find;that beyond mean-field approximation and for sufficiently strong;frustration of interband interactions there appears an unusual metallic;state precursory to a superconducting phase transition. In that state,;the system is not superconducting. Nonetheless, it features a;spontaneously broken Z(2) time reversal symmetry. By contrast, for weak;frustration of interband coupling the energy of a domain wall between;different Z(2) states is low and thus fluctuations restore broken time;reversal symmetry in the superconducting state at low temperatures.;2;0;0;0;2;1098-0121;WOS:000332162300003;;;J;Gracia-Salgado, Rogelio;Garcia-Chocano, Victor M.;Torrent, Daniel;Sanchez-Dehesa, Jose;Negative mass density and rho-near-zero quasi-two-dimensional;metamaterials: Design and applications;PHYSICAL REVIEW B;88;22;224305;10.1103/PhysRevB.88.224305;DEC 30 2013;2013;We report the design and the characterization of artificial structures;made of periodical distributions of structured cylindrical scatterers;embedded in a two-dimensional (2D) waveguide. For certain values of;their geometrical parameters they show simultaneously negative effective;bulk modulus and negative effective mass density. Here our analysis is;focused on the frequencies where they behave like materials with;negative density or density near zero (DNZ). The scattering units;consist of a rigid cylindrical core surrounded by an anisotropic shell;divided in angular sectors. The units are embedded in a 2D waveguide;whose height is smaller than the length of the cylinders, which makes;the structure quasi-2D. We have obtained the dispersion relation of the;surface acoustic waves excited at frequencies with negative effective;density. Also, we report phenomena associated with their DNZ behavior,;such as tunneling through narrow channels, control of the radiation;field, perfect transmission through sharp corners, and power splitting.;Preliminary experiments performed on samples with millimeter-scale;dimensions demonstrated their single-negative behavior, with the main;drawback being the strong losses measured at the frequencies where the;negative behavior is observed.;sanchez-dehesa, jose/L-9726-2014;1;0;0;0;1;1098-0121;WOS:000332162300006;;;J;Klar, D.;Brena, B.;Herper, H. C.;Bhandary, S.;Weis, C.;Krumme, B.;Schmitz-Antoniak, C.;Sanyal, B.;Eriksson, O.;Wende, H.;Oxygen-tuned magnetic coupling of Fe-phthalocyanine molecules to;ferromagnetic Co films;PHYSICAL REVIEW B;88;22;224424;10.1103/PhysRevB.88.224424;DEC 30 2013;2013;The coupling of submonolayer coverages of Fe-phthalocyanine molecules on;bare and oxygen-covered ferromagnetic Co(001) films was studied by;x-ray-absorption spectroscopy, especially the x-ray magnetic circular;dichroism, in combination with density functional theory. We observe;that the magnetic moments of the paramagnetic molecules are aligned even;at room temperature, resulting from a magnetic coupling to the;substrate. While the magnetization of the Fe ions directly adsorbed on;the Co surface is parallel to the magnetization of the Co film, the;introduction of an oxygen interlayer leads to an antiparallel alignment.;As confirmed by theory, the coupling strength is larger for the system;FePc/Co than for FePc/O/Co, causing a stronger temperature dependence of;the Fe magnetization for the latter system. Furthermore, the;calculations reveal that the coupling mechanism changes due to the O;layer from mostly direct exchange to Co of the bare surface to a 180;degrees antiferromagnetic superexchange via the O atoms. Finally, by;comparing the experimental x-ray-absorption spectra at the N K edge with;the corresponding calculations, the contribution of the individual;orbitals has been determined and the two inequivalent N atoms of the;molecules could be distinguished.;Wende, Heiko/J-8505-2012; Schmitz-Antoniak, Carolin/C-2234-2009;Schmitz-Antoniak, Carolin/0000-0002-8450-3515;3;0;0;0;3;1098-0121;WOS:000332162300007;;;J;Moor, Andreas;Volkov, Anatoly F.;Efetov, Konstantin B.;Time-dependent equation for the magnetic order parameter near the;quantum critical point in multiband superconductors with a spin-density;wave;PHYSICAL REVIEW B;88;22;224513;10.1103/PhysRevB.88.224513;DEC 30 2013;2013;Using a simple two-band model for Fe-based pnictides and the generalized;Eilenberger equation, we present a microscopic derivation of a;time-dependent equation for the amplitude of the spin-density wave near;the quantum critical point where it turns to zero. This equation;describes the dynamics of the magnetic (m), as well as the;superconducting order parameter (Delta). It is valid at low temperatures;T and small m (T, m << Delta) in a region of coexistence of both order;parameters, m and Delta. The boundary of this region is found in the;space of the nesting parameter {mu(0), mu(f)}, where mu(0) describes the;relative position of the electron and the hole pockets on the energy;scale and mu(phi) accounts for the ellipticity of the electron pocket.;At low T the number of quasiparticles is small due to the presence of;the energy gap Delta, and therefore the quasiparticles do not play a;role in the relaxation of m. This circumstance allows one to derive the;time-dependent equation for m in contrast to the case of conventional;superconductors for which the time-dependent Ginzburg-Landau equation;can be derived near T-c only in some special cases (high concentration;of paramagnetic impurities) [L. P. Gor'kov and G. M. Eliashberg, Sov.;Phys. JETP 27, 328 (1968)]. In the stationary case the derived equation;is valid at arbitrary temperatures. We find a solution of the stationary;equation which describes a domain wall in the magnetic structure. In the;center of the domain wall the superconducting order parameter has a;maximum, which means a local enhancement of superconductivity. Using the;derived time-dependent equation for m, we investgate also the stability;of a uniform commensurate spin-density wave (SDW) and obtain the values;of {mu(0), mu(f)} at which the first-order transition into the state;with m = 0 takes place or the transition to the state with an;inhomogeneous SDW occurs.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000332162300009;;;J;Singh, Yogesh;Tokiwa, Y.;Dong, J.;Gegenwart, P.;Spin liquid close to a quantum critical point in Na4Ir3O8;PHYSICAL REVIEW B;88;22;10.1103/PhysRevB.88.220413;DEC 30 2013;2013;Na4Ir3O8 is a candidate material for a three-dimensional quantum spin;liquid on the hyperkagome lattice. We present thermodynamic measurements;of heat capacity C and thermal conductivity kappa on high-quality;polycrystalline samples of Na4Ir3O8 down to T = 500 and 75 mK,;respectively. Absence of long-range magnetic order down to T = 75 mK;strongly supports claims of a spin-liquid ground state. The constant;magnetic susceptibility chi below T approximate to 25 K and the presence;of a small but finite linear-T term in C(T) suggest the presence of;gapless spin excitations. Additionally, the magnetic Gruneisen ratio;shows a divergence as T -> 0 K and a scaling behavior, which clearly;demonstrates that Na4Ir3O8 is situated close to a zero-field QCP.;Dong, Jinkui/J-3603-2013;2;0;0;0;2;1098-0121;WOS:000332162300002;;;J;Taen, Toshihiro;Ohtake, Fumiaki;Akiyama, Hiroki;Inoue, Hiroshi;Sun, Yue;Pyon, Sunseng;Tamegai, Tsuyoshi;Pair-breaking effects induced by 3-MeV proton irradiation in;Ba1-xKxFe2As2;PHYSICAL REVIEW B;88;22;224514;10.1103/PhysRevB.88.224514;DEC 30 2013;2013;Pair-breaking effects induced by 3-MeV proton irradiations are examined;in underdoped, optimally doped, and overdoped Ba1-xKxFe2As2 single;crystals in terms of suppression of the superconducting critical;temperature T-c. The small residual resistivity (RR) in as-grown;crystals shows the presence of negligible intrinsic scatterings, which;makes this material a model system for studying the effect of;artificially introduced scatterings. The RR and Tc change linearly with;the proton dose. As in the case of proton irradiation in Co-doped;BaFe2As2, we do not detect any low-temperature upturns in resistivity;attributable to magnetic scattering or localization. Regardless of K;doping levels, the critical value of the normalized scattering rate is;much higher than that expected in s(perpendicular to)-wave;superconductors.;悦, å™/B-1373-2013;悦, å™/0000-0002-5189-5460;3;0;0;0;3;1098-0121;WOS:000332162300010;;;J;Yan, Ming;Kakay, Attila;Andreas, Christian;Hertel, Riccardo;Spin-Cherenkov effect and magnonic Mach cones;PHYSICAL REVIEW B;88;22;220412;10.1103/PhysRevB.88.220412;DEC 30 2013;2013;We report on the Cherenkov-type excitation of spin waves (SWs) in;ferromagnets. Our micromagnetic simulations show that a localized;magnetic field pulse moving sufficiently fast along the surface of a;ferromagnet generates a SW boom, with a Mach-type cone of propagating;wave fronts. The SWs are formed when the velocity of the source exceeds;the propagation speed of SWs. Unlike the single cone of the usual;Cherenkov effect, we find that the magnetic Mach cone consists of two;wave fronts with different wave numbers. In patterned thin strips, this;magnetic analog of the Cherenkov effect should enable the excitation of;SWs with well-defined and velocity-dependent frequency. It thereby;provides a promising route towards tunable SW generation, with important;potential for applications in magnonic devices.;2;0;0;0;2;1098-0121;WOS:000332162300001;;;J;Yang, Lusann;Ceder, Gerbrand;Data-mined similarity function between material compositions;PHYSICAL REVIEW B;88;22;224107;10.1103/PhysRevB.88.224107;DEC 30 2013;2013;A new method for assessing the similarity of material compositions is;described. A similarity measure is important for the classification and;clustering of compositions. The similarity of the material compositions;is calculated utilizing a data-mined ionic substitutional similarity;based upon the probability with which two ions will substitute for each;other within the same structure prototype. The method is validated via;the prediction of crystal structure prototypes for oxides from the;Inorganic Crystal Structure Database, selecting the correct prototype;from a list of known prototypes within five guesses 75% of the time. It;performs particularly well on the quaternary oxides, selecting the;correct prototype from a list of known prototypes on the first guess 65%;of the time.;1;0;0;0;1;1098-0121;WOS:000332162300005;;;J;Bartelt, Norman C.;Nie, Shu;Starodub, Elena;Bernal-Villamil, Ivan;Gallego, Silvia;Vergara, Lucia;McCarty, Kevin F.;de la Figuera, Juan;Order-disorder phase transition on the (100) surface of magnetite;PHYSICAL REVIEW B;88;23;235436;10.1103/PhysRevB.88.235436;DEC 30 2013;2013;Using low-energy electron diffraction, we show that the room-temperature;(root 2 x root 2) R45 degrees reconstruction of Fe3O4(100) reversibly;disorders at similar to 450 degrees C. Short-range order persists above;the transition, suggesting that the transition is second order and;Ising-like. We interpret the transition in terms of a model in which;subsurface Fe3+ is replaced by Fe2+ as the temperature is raised. This;model reproduces the structure of antiphase boundaries previously;observed with scanning tunneling microscopy, as well as the continuous;nature of the transition. To account for the observed transition;temperature, the energy cost of each charge rearrangement is 82 meV.;de la Figuera, Juan/E-7046-2010; Gallego Queipo, Silvia/J-3411-2012;de la Figuera, Juan/0000-0002-7014-4777;;1;0;0;0;1;1098-0121;WOS:000332163500007;;;J;Cazorla, Claudio;Iniguez, Jorge;Insights into the phase diagram of bismuth ferrite from quasiharmonic;free-energy calculations;PHYSICAL REVIEW B;88;21;214430;10.1103/PhysRevB.88.214430;DEC 30 2013;2013;We have used first-principles methods to investigate the phase diagram;of multiferroic bismuth ferrite (BiFeO3 or BFO), revealing the energetic;and vibrational features that control the occurrence of various relevant;structures. More precisely, we have studied the relative stability of;four low-energy BFO polymorphs by computing their free energies within;the quasiharmonic approximation, introducing a practical scheme that;allows us to account for the main effects of spin disorder. As expected,;we find that the ferroelectric ground state of the material (with R3c;space group) transforms into an orthorhombic paraelectric phase (Pnma);upon heating. We show that this transition is not significantly affected;by magnetic disorder, and that the occurrence of the Pnma structure;relies on its being vibrationally (although not elastically) softer than;the R3c phase. We also investigate a representative member of the family;of nanotwinned polymorphs recently predicted for BFO [S. Prosandeev et;al., Adv. Funct. Mater. 23, 234 (2013)] and discuss their possible;stabilization at the boundaries separating the R3c and Pnma regions in;the corresponding pressure-temperature phase diagram. Finally, we;elucidate the intriguing case of the so-called supertetragonal phases of;BFO: Our results explain why such structures have never been observed in;the bulk material, despite their being stable polymorphs of very low;energy. Quantitative comparison with experiment is provided whenever;possible, and the relative importance of various physical effects;(zero-point motion, spin fluctuations, thermal expansion) and technical;features (employed exchange-correlation energy density functional) is;discussed. Our work attests the validity and usefulness of the;quasiharmonic scheme to investigate the phase diagram of this complex;oxide, and prospective applications are discussed.;Iniguez, Jorge/B-6856-2009;Iniguez, Jorge/0000-0001-6435-3604;0;0;0;0;0;1098-0121;WOS:000332161300005;;;J;Chandrasekaran, Anand;Damjanovic, Dragan;Setter, Nava;Marzari, Nicola;Defect ordering and defect-domain-wall interactions in PbTiO3: A;first-principles study;PHYSICAL REVIEW B;88;21;214116;10.1103/PhysRevB.88.214116;DEC 30 2013;2013;The properties of ferroelectric materials, such as lead zirconate;titanate (PZT), are heavily influenced by the interaction of defects;with domain walls. These defects are either intrinsic or are induced by;the addition of dopants. We study here PbTiO3 (the end member of a key;family of solid solutions) in the presence of acceptor (Fe) and donor;(Nb) dopants, and the interactions of the different defects and defect;associates with the domain walls. For the case of iron acceptors, the;calculations point to the formation of defect associates involving an;iron substitutional defect and a charged oxygen vacancy (Fe-Ti'-V-O '').;This associate exhibits a strong tendency to align in the direction of;the bulk polarization; in fact, ordering of defects is also observed in;pure PbTiO3 in the form of lead-oxygen divacancies. Conversely,;calculations on donor-doped PbTiO3 do not indicate the formation of;polar defect complexes involving donor substitutions. Last, it is;observed that both isolated defects in donor-doped materials and defect;associates in acceptor-doped materials are more stable at 180 degrees.;domain walls. However, polar defect complexes lead to asymmetric;potentials at domain walls due to the interaction of the defect;polarization with the bulk polarization. The relative pinning;characteristics of different defects are then compared, to develop an;understanding of defect-domain-wall interactions in both doped and pure;PbTiO3. These results may also help in understanding hardening and;softening mechanisms in PZT.;Damjanovic, Dragan/A-8231-2008;Damjanovic, Dragan/0000-0002-9596-7438;3;1;0;0;3;1098-0121;WOS:000332161300002;;;J;Choi, Minseok;Janotti, Anderson;Van de Walle, Chris G.;Native point defects in LaAlO3: A hybrid functional study;PHYSICAL REVIEW B;88;21;214117;10.1103/PhysRevB.88.214117;DEC 30 2013;2013;We investigate the electronic structure of defects in LaAlO3 (LAO) and;their effects on electronic properties of bulk and heterostructures. Our;calculations indicate that vacancies have lower formation energies than;interstitials and antisites. The La vacancy (V-La) and the Al vacancy;(V-Al) are deep acceptors, while the oxygen vacancy (VO) is a deep;donor. The impact of these defects on the performance of;metal-oxide-semiconductor devices is analyzed by placing the LAO band;edges and defect levels with respect to the band edges of GaN, InGaAs,;and Si. V-O introduces levels in the gap or in the vicinity of the;semiconductor conduction band, resulting in carrier traps and/or leakage;current through the gate oxide, while V-La and V-Al are sources of;negative fixed charges. We also discuss how oxygen vacancies in LAO can;influence the observed two-dimensional electron gas (2DEG) in;LaAlO3/SrTiO3 heterostructures. We conclude that V-O in the LAO layer;may provide electrons that fill compensating surface states, resulting;in higher 2DEG densities, at least for modest LAO layer thicknesses.;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;4;0;0;0;4;1098-0121;WOS:000332161300003;;;J;Haham, Noam;Konczykowski, Marcin;Kuiper, Bouwe;Koster, Gertjan;Klein, Lior;Testing dependence of anomalous Hall effect on resistivity in SrRuO3 by;its increase with electron irradiation;PHYSICAL REVIEW B;88;21;214431;10.1103/PhysRevB.88.214431;DEC 30 2013;2013;We measure the anomalous Hall effect (AHE) in several patterns of the;itinerant ferromagnet SrRuO3 before and after the patterns are;irradiated with electrons. The irradiation increases the resistivity of;the patterns due to the introduction of point defects and we find that;the AHE coefficient R-s scales with the total resistivity before and;after irradiation which indicates that the AHE is determined by the;total resistivity. We discuss possible origins of slight deviations from;scaling that are observed at low temperature, particularly below 70 K.;0;0;0;0;0;1098-0121;WOS:000332161300006;;;J;Heinhold, R.;Williams, G. T.;Cooil, S. P.;Evans, D. A.;Allen, M. W.;Influence of polarity and hydroxyl termination on the band bending at;ZnO surfaces;PHYSICAL REVIEW B;88;23;235315;10.1103/PhysRevB.88.235315;DEC 30 2013;2013;Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and;real-time in situ XPS were used to study the thermal stability of the;hydroxyl termination and downward band bending on the polar surfaces of;ZnO single crystals. On the O-polar face, the position of the Fermi;level could be reversibly cycled between the conduction band and the;band gap over an energetic distance of approximately 0.8 eV (similar to;1/4 of the band gap) by controlling the surface H coverage using simple;ultrahigh vacuum (UHV) heat treatments up to 750 degrees C, dosing with;H2O/H-2 and atmospheric exposure. A metallic to semiconductorlike;transition in the electronic nature of the O-polar face was observed at;an H coverage of approximately 0.9 monolayers. For H coverage less than;this, semiconducting (depleted) O-polar surfaces were created that were;reasonably stable in UHV conditions. In contrast, the downward band;bending on the Zn-polar face was significantly more resilient, and;depleted surfaces could not be prepared by heat treatment alone.;3;0;0;0;3;1098-0121;WOS:000332163500005;;;J;Levy, Peter M.;Yang, Hongxin;Chshiev, Mairbek;Fert, Albert;Spin Hall effect induced by Bi impurities in Cu: Skew scattering and;side-jump;PHYSICAL REVIEW B;88;21;214432;10.1103/PhysRevB.88.214432;DEC 30 2013;2013;The spin Hall effect (SHE) has recently turned out to be an interesting;tool for the conversion between charge and spin currents, the conversion;factor being characterized by the spin Hall angle Phi(H). Large spin;Hall angles have been now measured in heavy metals like W(Phi(H) =;-0.33) and Cu doped with Bi impurities (Phi(H) = -0.24). In this article;we express the contributions to the SHE induced by skew scattering and;scattering with side-jump from Bi impurities in Cu, and we use ab initio;calculations of the electronic structure of CuBi alloys to estimate the;values of these two contributions. The predominant effect comes from;skew scattering; the spin Hall angle is negative in agreement with;experiments, but the calculated amplitude is smaller.;Chshiev, Mairbek/A-9742-2008; Yang, HongXin/H-5719-2012;Chshiev, Mairbek/0000-0001-9232-7622;;0;0;0;0;0;1098-0121;WOS:000332161300007;;;J;Lu, Wenlai;Yang, Ping;Song, Wen Dong;Chow, Gan Moog;Chen, Jing Sheng;Control of oxygen octahedral rotations and physical properties in SrRuO3;films;PHYSICAL REVIEW B;88;21;214115;10.1103/PhysRevB.88.214115;DEC 30 2013;2013;Control of octahedral rotations in the ABO(3) perovskite oxides has been;of great interest due to its potential in rationally discovering and;designing new multifunctional phases. In this study, we show that;octahedral rotations of the SrRuO3 films can be controlled by oxygen;vacancies as well as by interfacial coupling, which further determines;the physical properties. Half-integer reflections using high-resolution;synchrotron x-ray diffraction were carried out to determine the;octahedral rotation pattern of SrRuO3 films on SrTiO3 substrates. The;transition of RuO6 rotation pattern accompanied by the structural change;from monoclinic P2(1)/m to tetragonal F4/mmc can be understood from the;preference of oxygen vacancies in the SrO atomic plane and the coupling;of octahedra across the interface between film and substrate. The field;angle dependence of magnetoresistance further confirmed the structural;phase transition with changes in octahedral rotations. The monoclinic;phase has the uniaxial magnetic easy axis 30 away from the [001];direction towards the [010] direction while the tetragonal phase has;uniaxial magnetic easy axis along the fourfold axis which is;perpendicular to the film surface. This study demonstrates the ability;to control the octahedral rotations in perovskite films and its;importance when designing thin films and multilayers with desired;functional property.;Chen, Jingsheng/D-9107-2011; Yang, Ping/C-5612-2008;1;0;0;0;1;1098-0121;WOS:000332161300001;;;J;Marcano, N.;Algarabel, P. A.;Rodriguez Fernandez, J.;Magen, C.;Morellon, L.;Singh, Niraj K.;Gschneidner, K. A., Jr.;Pecharsky, V. K.;Ibarra, M. R.;Effects of pressure on the magnetic-structural and Griffiths-like;transitions in Dy5Si3Ge;PHYSICAL REVIEW B;88;21;214429;10.1103/PhysRevB.88.214429;DEC 30 2013;2013;Magnetization studies have been performed on a polycrystalline sample of;Dy5Si3Ge as a function of an applied magnetic field (up to 50 kOe) and;hydrostatic pressure (up to 10 kbar) in the 5-300 K temperature range.;The anomalous behavior of the magnetic susceptibility indicates that a;Griffiths-like phase exists at low magnetic fields and pressures up to;10 kbar. We present evidence that the high-temperature second-order;ferromagnetic transition can be coupled with the low-temperature;first-order crystallographic transformation into a single first-order;magnetic-crystallographic transformation using a magnetic field and;hydrostatic pressure as tuning parameters. The effect of pressure on the;Griffiths-like phase is reported and analyzed in the framework of the;complex competition between the interslab and intraslab magnetic;interactions.;Magen, Cesar/A-2825-2013; Morellon, Luis/K-6922-2014; Marcano Aguado, Noelia/F-9446-2010;
10:9:3:1 Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy
DOI:10.1063/1.3572025 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Tainoff, D.;Al-Khalfioui, M.;Deparis, C.;Vinter, B.;Teisseire, M.;Morhain, C.;Chauveau, J. -M.;
10:9:3:2 Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.matlet.2011.12.030 JN:MATERIALS LETTERS PY:2012
TC:19 AU: Ding, Ping;Pan, Xinhua;Huang, Jingyun;Lu, Bin;Zhang, Honghai;Chen, Wei;Ye, Zhizhen;
10:9:3:3 p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.07.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:19 AU: Ding, P.;Pan, X. H.;Huang, J. Y.;He, H. P.;Lu, B.;Zhang, H. H.;Ye, Z. Z.;
10:9:3:4 Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers
DOI:10.1063/1.3673346 JN:APPLIED PHYSICS LETTERS PY:2012
TC:26 AU: Wang, T.;Wu, H.;Chen, C.;Liu, C.;
10:9:3:5 Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
DOI:10.1016/j.jcrysgro.2010.04.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:22 AU: Lautenschlaeger, Stefan;Eisermann, Sebastian;Hofmann, Michael N.;Roemer, Udo;Pinnisch, Melanie;Laufer, Andreas;Meyer, Bruno K.;von Wenckstern, Holger;Lajn, Alexander;Schmidt, Florian;Grundmann, Marius;Blaesing, Juergen;Krost, Alois;
10:9:3:6 Effect of Na contents on fabrication of p-type non-polar m-plane ZnO films
DOI:10.1016/j.jcrysgro.2014.06.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Pan, X. H.;Zhou, Y. S.;Chen, S. S.;Ding, P.;Lu, B.;Huang, J. Y.;Ye, Z. Z.;
10:9:3:7 Realization of Na-doped p-type non-polar a-plane Zn1-xCdxO films by pulsed laser deposition
DOI:10.1016/j.jallcom.2013.09.071 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Li, Y.;Pan, X. H.;Jiang, J.;He, H. P.;Huang, J. Y.;Ye, C. L.;Ye, Z. Z.;
10:9:3:8 Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
DOI:10.1063/1.3394012 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Yang, A. L.;Song, H. P.;Liang, D. C.;Wei, H. Y.;Liu, X. L.;Jin, P.;Qin, X. B.;Yang, S. Y.;Zhu, Q. S.;Wang, Z. G.;
10:9:3:9 The role of band alignment in p-type conductivity of Na-doped ZnMgO: Polar versus non-polar
DOI:10.1063/1.4869481 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Zhang, H. H.;Pan, X. H.;Li, Y.;Ye, Z. Z.;Lu, B.;Chen, W.;Huang, J. Y.;Ding, P.;Chen, S. S.;He, H. P.;Lu, J. G.;Chen, L. X.;Ye, C. L.;
10:9:3:10 Growth of non-polar Zn1-x Mg (x) O thin films with different Mg contents on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
DOI:10.1007/s00339-014-8376-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Chen, W.;Pan, X. H.;Ding, P.;Zhang, H. H.;Chen, S. S.;Dai, W.;Huang, J. Y.;Lu, B.;Ye, Z. Z.;
10:9:3:11 Homobuffer thickness effect on the conduction type of non-polar ZnO thin films
DOI:10.1016/j.jcrysgro.2014.07.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Pan, X. H.;Ding, P.;Huang, J. Y.;He, H. P.;Ye, Z. Z.;Lu, B.;
10:9:3:12 Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films
DOI:10.1063/1.3486445 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Yang, Z.;Zhou, H. M.;Chen, W. V.;Li, L.;Zhao, J. Z.;Yu, P. K. L.;Liu, J. L.;
10:9:3:13 Highly stable non-polar p-type Ag-doped ZnO thin films grown on r-cut sapphire
DOI:10.1016/j.matlet.2013.02.115 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Myers, M. A.;Lee, J. H.;Wang, H.;
10:9:3:14 Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.apsusc.2013.04.071 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Zhang, H. H.;Pan, X. H.;Ding, P.;Huang, J. Y.;He, H. P.;Chen, W.;Lu, B.;Lu, J. G.;Chen, S. S.;Ye, Z. Z.;
10:9:3:15 Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition
DOI:10.1016/j.tsf.2013.03.071 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Kim, Ki-Wook;Son, Hyo-Soo;Choi, Nak-Jung;Kim, Jihoon;Lee, Sung-Nam;
10:9:4:1 Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes
DOI:10.1063/1.3606414 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Neumann, M. D.;Cobet, C.;Esser, N.;Laumer, B.;Wassner, T. A.;Eickhoff, M.;Feneberg, M.;Goldhahn, R.;
10:9:4:2 Exciton confinement in homo- and heteroepitaxial ZnO/Zn-1 (-) xMgxO quantum wells with x < 0.1
DOI:10.1063/1.3658020 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Laumer, Bernhard;Wassner, Thomas A.;Schuster, Fabian;Stutzmann, Martin;Schoermann, Joerg;Rohnke, Marcus;Chernikov, Alexej;Bornwasser, Verena;Koch, Martin;Chatterjee, Sangam;Eickhoff, Martin;
10:9:4:3 Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films
DOI:10.1063/1.4893138 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Saha, S.;Nagar, S.;Chakrabarti, S.;
10:9:4:4 Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4754076 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Laumer, Bernhard;Schuster, Fabian;Stutzmann, Martin;Bergmaier, Andreas;Dollinger, Guenther;Vogel, Stephen;Gries, Katharina I.;Volz, Kerstin;Eickhoff, Martin;
10:9:4:5 ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers
DOI:10.1063/1.4723642 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Laumer, Bernhard;Schuster, Fabian;Wassner, Thomas A.;Stutzmann, Martin;Rohnke, Marcus;Schoermann, Joerg;Eickhoff, Martin;
10:9:4:6 Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells
DOI:10.1063/1.3578636 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Chauveau, J. -M.;Teisseire, M.;Kim-Chauveau, H.;Morhain, C.;Deparis, C.;Vinter, B.;
10:9:4:7 Growth and structural characterization of intrinsic, acceptor, and donor doped (Mg,Zn)O epilayers via metalorganic vapor phase epitaxy on (1 0 (1)over-bar 0) ZnO substrates
DOI:10.1016/j.jcrysgro.2011.03.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Pierce, J. M.;Wen, H.;Liu, K.;Kumrr, M.;Tresback, J.;Ali, Y. S.;Krahnert, A.;Adekore, B. T.;
10:9:4:8 Precise calibration of Mg concentration in MgxZn1-xO thin films grown on ZnO substrates
DOI:10.1063/1.4748306 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Kozuka, Y.;Falson, J.;Segawa, Y.;Makino, T.;Tsukazaki, A.;Kawasaki, M.;
10:9:4:9 Hot-spot contributions in shocked high explosives from mesoscale ignition models
DOI:10.1063/1.4811233 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Levesque, G.;Vitello, P.;Howard, W. M.;
10:9:5:1 Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition
DOI:10.1063/1.3475402 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Brandt, Matthias;Lange, Martin;Stoelzel, Marko;Mueller, Alexander;Benndorf, Gabriele;Zippel, Jan;Lenzner, Joerg;Lorenz, Michael;Grundmann, Marius;
10:9:5:2 Origin of the near-band-edge luminescence in MgxZn1-xO alloys
DOI:10.1063/1.3270431 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Mueller, Alexander;Stoelzel, Marko;Dietrich, Christof;Benndorf, Gabriele;Lorenz, Michael;Grundmann, Marius;
10:9:5:3 Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct quantum-confined Stark effect
DOI:10.1063/1.3693555 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Stoelzel, Marko;Kupper, Johannes;Brandt, Matthias;Mueller, Alexander;Benndorf, Gabriele;Lorenz, Michael;Grundmann, Marius;
10:9:5:4 Impact of strain on electronic defects in (Mg,Zn)O thin films
DOI:10.1063/1.4894841 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Schmidt, Florian;Mueller, Stefan;von Wenckstern, Holger;Benndorf, Gabriele;Pickenhain, Rainer;Grundmann, Marius;
10:9:5:5 Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications
DOI:10.1063/1.3678594 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Dietrich, C. P.;Lange, M.;Stoelzel, M.;Grundmann, M.;
10:9:5:6 Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect
DOI:10.1103/PhysRevB.88.045315 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Stoelzel, Marko;Mueller, Alexander;Benndorf, Gabriele;Brandt, Matthias;Lorenz, Michael;Grundmann, Marius;
10:9:5:7 Determination of the spontaneous polarization of wurtzite (Mg,Zn)O
DOI:10.1063/1.4875919 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Stoelzel, Marko;Mueller, Alexander;Benndorf, Gabriele;Lorenz, Michael;Patzig, Christian;Hoeche, Thomas;Grundmann, Marius;
10:9:5:8 Room-Temperature Quantum Cascade Laser: ZnO/Zn1-xMgxO Versus GaN/AlxGa1-xN
DOI:10.1007/s11664-013-2548-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Chou, Hung Chi;Mazady, Anas;Zeller, John;Manzur, Tariq;Anwar, Mehdi;
10:9:5:9 Plasma discharge efficiency increase by using a small bandgap protective layer material- first-principles study for Mg(1-x)Zn(x)O
DOI:10.1063/1.3585825 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Li, Qiaofen;Tu, Yan;Tolner, Harm;Yang, Lanlan;
10:9:6:1 Optical properties of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition
DOI:10.1364/OME.4.002346 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Zhang, Jun;Tian, Wu;Wu, Feng;Sun, Shichuang;Wang, Shuai;Dai, Jiangnan;Fang, Yanyan;Wu, Zhihao;Chen, Changqing;Tai, Jiali;Li, Mingkai;He, Yunbin;
10:9:6:2 Epitaxial growth of nonpolar and polar ZnO on gamma-LiAlO2 (100) substrate by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2013.05.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:7 AU: Chen, Y. -M.;Huang, T. -H.;Yan, T.;Chang, L.;Chou, M. M. C.;Ploog, K. H.;Chiang, C. -M.;
10:9:6:3 Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition
DOI:10.1016/j.materresbull.2012.05.056 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:4 AU: Li, Yang;Zhang, Yinzhu;He, Haiping;Ye, Zhizhen;Jiang, Jie;Lu, Jianguo;Huang, Jingyun;
10:9:6:4 Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition
DOI:10.1016/j.jcrysgro.2012.11.053 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Zippel, J.;Lorenz, M.;Lange, M.;Stoelzel, M.;Benndorf, G.;Grundmann, M.;
10:9:6:5 Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering
DOI:10.1016/j.jallcom.2009.09.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Dai, J. N.;Han, X. Y.;Wu, Z. H.;Yu, C. H.;Xiang, R. F.;He, Q. H.;Gao, Y. H.;Chen, C. Q.;Xiao, X. H.;Peng, T. C.;
10:9:6:6 Effect of high temperature thermal treatment of (100) gamma-LiAlO2 substrate on epitaxial growth of ZnO films by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.tsf.2014.05.054 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Chen, S. S.;Pan, X. H.;Ding, P.;Zhang, H. H.;Chen, W.;Dai, W.;Huang, J. Y.;Ye, Z. Z.;
10:9:7:1 Interface and defect structures in ZnO films on m-plane sapphire substrates
DOI:10.1016/j.jcrysgro.2009.10.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:19 AU: Lee, Jae Wook;Kim, Jung-Hyun;Han, Seok Kyu;Hong, Soon-Ku;Lee, Jeong Yong;Hong, Sun Ig;Yao, Takafumi;
10:9:7:2 Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films
DOI:10.1063/1.4732140 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Kuo, C. C.;Lin, B. H.;Yang, Song;Liu, W. R.;Hsieh, W. F.;Hsu, C-H;
10:9:7:3 Single Domain m-Plane ZnO Grown on m-Plane Sapphire by Radio Frequency Magnetron Sputtering
DOI:10.1021/am301271k JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:5 AU: Lin, B. H.;Liu, W. -R;Lin, C. Y.;Hsu, S. T.;Yang, S.;Kuo, C. C.;Hsu, C. -H.;Hsieh, W. F.;Chien, F. S. -S.;Chang, C. S.;
10:9:7:4 Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate
DOI:10.1116/1.3539046 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:6 AU: Wang, Wei-Lin;Peng, Chun-Yen;Ho, Yen-Teng;Chuang, Shu-Chang;Chang, Li;
10:9:7:5 Structural property of m-plane ZnO epitaxial film grown on LaAlO3 (112) substrate
DOI:10.1016/j.jcrysgro.2009.12.050 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Wang, Wei-Lin;Ho, Yen-Teng;Chiu, Kun-An;Peng, Chun-Yen;Chang, Li;
10:9:8:1 Growth and characterization of non-polar ZnO thin films by pulsed laser deposition
DOI:10.1016/j.matlet.2010.02.047 JN:MATERIALS LETTERS PY:2010
TC:11 AU: Elanchezhiyan, J.;Bae, K. R.;Lee, W. J.;Shin, B. C.;Kim, S. C.;
10:9:8:2 Realization of nonpolar a-plane ZnO films on r-plane sapphire substrates using a simple single-source chemical vapor deposition
DOI:10.1016/j.matlet.2010.11.010 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Chen, Jinju;Deng, Hong;Li, Ning;Tian, Yanlei;Ji, Hong;
10:9:8:3 Growth of Na doped p-type non-polar a-plane ZnO films by pulsed laser deposition
DOI:10.1016/j.matlet.2012.02.039 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Li, Yang;Zhang, Yinzhu;He, Haiping;Ye, Zhizhen;Jiang, Jie;Cao, Lin;
10:9:8:4 Effect of substrate microstructure on the misorientation of a-plane ZnO film investigated using x-ray diffraction
DOI:10.1116/1.3573670 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:0 AU: Chen, Jinju;Deng, Hong;Ji, Hong;Tian, Yanlei;
10:9:9:1 The effects of optical phonon on the binding energy of bound polaron in a wurtzite ZnO/MgxZn1-xO quantum well
DOI:10.1063/1.4887075 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhao, Feng-Qi;Guo, Zi-Zheng;Zhu, Jun;
10:9:9:2 Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure
DOI:10.1063/1.4822265 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Su, S. C.;Zhu, H.;Zhang, L. X.;He, M.;Zhao, L. Z.;Yu, S. F.;Wang, J. N.;Ling, F. C. C.;
10:9:9:3 Lasing characteristics of random cylindrical microcavity lasers
DOI:10.1063/1.3670501 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Zhu, H.;Yu, S. F.;Zhang, W. F.;
10:9:9:4 Electronic and Optical Properties of MgxZn1-xO and BexZn1-xO Quantum Wells
DOI:10.1007/s11664-010-1163-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:6 AU: Furno, Enrico;Chiaria, Simone;Penna, Michele;Bellotti, Enrico;Goano, Michele;
10:9:10:1 Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering
DOI:10.1016/j.jallcom.2012.12.064 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Chen, Hou-Guang;Hung, Sung-Po;
10:9:10:2 Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire
DOI:10.1016/j.jcrysgro.2014.01.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Wang, H. T.;Jia, C. H.;Xu, J. K.;Chen, Y. H.;Chen, X. W.;Zhang, W. F.;
10:9:10:3 Epitaxial growth of non-polar a-plane AlN films by low temperature sputtering using ZnO buffer layers
DOI:10.1016/j.tsf.2011.01.149 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Chen, Hou-Guang;Jian, Sheng-Rui;Kao, Hui-Ling;Chen, Meei-Ru;Huang, Gou-Zhi;
10:9:10:4 Sb-doping of ZnO: Phase segregation and its impact on p-type doping
DOI:10.1063/1.3570691 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Friedrich, F.;Sieber, I.;Klimm, C.;Klaus, M.;Genzel, Ch.;Nickel, N. H.;
10:10:1 Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films
DOI:10.1063/1.3466987 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:104 AU: Banerjee, Parag;Lee, Won-Jae;Bae, Ki-Ryeol;Lee, Sang Bok;Rubloff, Gary W.;
10:10:2 Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films
DOI:10.1002/adfm.201001342 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:79 AU: Lee, Do-Joong;Kim, Hyun-Mi;Kwon, Jang-Yeon;Choi, Hyoji;Kim, Soo-Hyun;Kim, Ki-Bum;
10:10:3 Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition
DOI:10.1063/1.4813136 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:15 AU: Wu, Y.;Hermkens, P. M.;van de Loo, B. W. H.;Knoops, H. C. M.;Potts, S. E.;Verheijen, M. A.;Roozeboom, F.;Kessels, W. M. M.;
10:10:4 Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity
DOI:10.1021/cm101227h JN:CHEMISTRY OF MATERIALS PY:2010
TC:49 AU: Dasgupta, Neil P.;Neubert, Sebastian;Lee, Wonyoung;Trejo, Orlando;Lee, Jung-Rok;Prinz, Fritz B.;
10:10:5 Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-Atomic Layer Deposition
DOI:10.1021/am300458q JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:11 AU: Thomas, M. A.;Cui, J. B.;
10:10:6 The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD
DOI:10.1016/j.apsusc.2010.11.138 JN:APPLIED SURFACE SCIENCE PY:2011
TC:36 AU: Kim, Doyoung;Kang, Hyemin;Kim, Jae-Min;Kim, Hyungjun;
10:10:7 Preparation of ZnO films with variable electric field-assisted atomic layer deposition technique
DOI:10.1016/j.apsusc.2014.02.097 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Lu, Weier;Dong, Yabin;Li, Chaobo;Xia, Yang;Liu, Bangwu;Xie, Jing;Lia, Nan;Zhang, Yanqing;
10:10:8 Highly stable Al-doped ZnO transparent conductors using an oxidized ultrathin metal capping layer at its percolation thickness
DOI:10.1063/1.3631674 JN:APPLIED PHYSICS LETTERS PY:2011
TC:21 AU: Chen, T. L.;Ghosh, D. S.;Krautz, D.;Cheylan, S.;Pruneri, V.;
10:10:9 Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition
DOI:10.1116/1.3687939 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:20 AU: Dhakal, Tara;Vanhart, Daniel;Christian, Rachel;Nandur, Abhishek;Sharma, Anju;Westgate, Charles R.;
10:10:10 Oriented Growth of Al2O3:ZnO Nanolaminates for Use as Electron-Selective Electrodes in Inverted Polymer Solar Cells
DOI:10.1002/adfm.201102968 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:24 AU: Cheun, Hyeunseok;Fuentes-Hernandez, Canek;Shim, Jaewon;Fang, Yunnan;Cai, Ye;Li, Hong;Sigdel, Ajaya K.;Meyer, Jens;Maibach, Julia;Dindar, Amir;Zhou, Yinhua;Berry, Joseph J.;Bredas, Jean-Luc;Kahn, Antoine;Sandhage, Kenneth H.;Kippelen, Bernard;
10:10:11 Transparent Conductive Gas-Permeation Barriers on Plastics by Atomic Layer Deposition
DOI:10.1002/adma.201204358 JN:ADVANCED MATERIALS PY:2013
TC:10 AU: Chou, Chun-Ting;Yu, Pei-Wei;Tseng, Ming-Hung;Hsu, Che-Chen;Shyue, Jing-Jong;Wang, Ching-Chiun;Tsai, Feng-Yu;
10:10:12 Improved efficiency of aluminum doping in ZnO thin films grown by atomic layer deposition
DOI:10.1016/j.apsusc.2014.04.205 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Park, Hui Kyung;Heo, Jaeyeong;
10:10:13 Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation
DOI:10.1016/j.tsf.2011.02.024 JN:THIN SOLID FILMS PY:2011
TC:27 AU: Malm, Jari;Sahramo, Elina;Perala, Juho;Sajavaara, Timo;Karppinen, Maarit;
10:10:14 GaAs nanowires grown on Al-doped ZnO buffer layer
DOI:10.1063/1.4819797 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Haggren, Tuomas;Perros, Alexander;Dhaka, Veer;Huhtio, Teppo;Jussila, Henri;Jiang, Hua;Ruoho, Mikko;Kakko, Joona-Pekko;Kauppinen, Esko;Lipsanen, Harri;
10:10:15 Purge-time-dependent growth of ZnO thin films by atomic layer deposition
DOI:10.1016/j.jallcom.2014.03.169 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Park, Hui Kyung;Yang, Bong Seob;Park, Sanghyun;Kim, Myung Sang;Shin, Jae Cheol;Heo, Jaeyeong;
10:10:16 Temperature and thickness-dependent growth behaviour and opto-electronic properties of Ga-doped ZnO films prepared by aerosol-assisted chemical vapour deposition
DOI:10.1039/c4ta03888f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:8 AU: Chen, Shuqun;Noor, Nuruzzaman;Parkin, Ivan P.;Binions, Russell;
10:10:17 Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility
DOI:10.1039/c3tc30469h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:7 AU: Lee, Do-Joong;Kim, Ki-Ju;Kim, Soo-Hyun;Kwon, Jang-Yeon;Xu, Jimmy;Kim, Ki-Bum;
10:10:18 Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum
DOI:10.1116/1.3666030 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:6 AU: Yuan, Hai;Luo, Bing;Yu, Dan;Cheng, An-jen;Campbell, Stephen A.;Gladfelter, Wayne L.;
10:10:19 Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
DOI:10.1116/1.4710519 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:10 AU: Maeng, W. J.;Kim, Sang-Jun;Park, Jin-Seong;Chung, Kwun-Bum;Kim, Hyungjun;
10:10:20 Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition
DOI:10.1016/j.tsf.2010.08.151 JN:THIN SOLID FILMS PY:2010
TC:30 AU: Ahn, Cheol Hyoun;Kim, Hyoungsub;Cho, Hyung Koun;
10:10:21 Thin-film electronics by atomic layer deposition
DOI:10.1116/1.3670748 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:18 AU: Levy, David H.;Nelson, Shelby F.;
10:10:22 New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
DOI:10.1116/1.4768172 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:4 AU: Thomas, Matthew A.;Armstrong, Johnathan C.;Cui, Jingbiao;
10:10:23 Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices
DOI:10.1016/j.solmat.2010.04.006 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:35 AU: Saarenpaa, Hanna;Niemi, Tapio;Tukiainen, Antti;Lemmetyinen, Helge;Tkachenko, Nikolai;
10:10:24 Atomic layer deposited ZnO:Al for nanostructured silicon heterojunction solar cells
DOI:10.1016/j.solmat.2012.04.004 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:18 AU: Steglich, M.;Bingel, A.;Jia, G.;Falk, F.;
10:10:25 The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode
DOI:10.1016/j.synthmet.2011.02.007 JN:SYNTHETIC METALS PY:2011
TC:16 AU: Gong, Su Cheol;Jang, Ji Geun;Chang, Ho Jung;Park, Jin-Seong;
10:10:26 Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition
DOI:10.1016/j.apsusc.2012.09.159 JN:APPLIED SURFACE SCIENCE PY:2013
TC:12 AU: Choi, Yong-June;Gong, Su Cheol;Johnson, David C.;Golledge, Stephen;Yeom, Geun Young;Park, Hyung-Ho;
10:10:27 Correlating Growth Characteristics in Atomic Layer Deposition with Precursor Molecular Structure: The Case of Zinc Tin Oxide
DOI:10.1021/cm403913r JN:CHEMISTRY OF MATERIALS PY:2014
TC:3 AU: Tanskanen, Jukka T.;Hagglund, Carl;Bent, Stacey F.;
10:10:28 On the environmental stability of ZnO thin films by spatial atomic layer deposition
DOI:10.1116/1.4816354 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:10 AU: Illiberi, Andrea;Scherpenborg, Robert;Theelen, Mirjam;Poodt, Paul;Roozeboom, Fred;
10:10:29 Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition
DOI:10.1016/j.tsf.2014.01.068 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Mullings, Marja N.;Haegglund, Carl;Tanskanen, Jukka T.;Yee, Yesheng;Geyer, Scott;Bent, Stacey F.;
10:10:30 Spatial Atmospheric Atomic Layer Deposition of AlxZn1-xO
DOI:10.1021/am404137e JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:5 AU: Illiberi, A.;Scherpenborg, R.;Wu, Y.;Roozeboom, F.;Poodt, P.;
10:10:31 Enhanced Doping Efficiency of Al-Doped ZnO by Atomic Layer Deposition Using Dimethylaluminum lsopropoxide as an Alternative Aluminum Precursor
DOI:10.1021/cm402974j JN:CHEMISTRY OF MATERIALS PY:2013
TC:14 AU: Wu, Y.;Potts, S. E.;Hermkens, P. M.;Knoops, H. C. M.;Roozeboom, F.;Kessels, W. M. M.;
10:10:32 Electrical response in atomic layer deposited Al:ZnO with varying stack thickness
DOI:10.1063/1.4875536 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Mundle, R.;Pradhan, A. K.;
10:10:33 A simple approach to the fabrication of fluorine-doped zinc oxide thin films by atomic layer deposition at low temperatures and an investigation into the growth mode
DOI:10.1039/c3tc31478b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:13 AU: Choi, Yong-June;Park, Hyung-Ho;
10:10:34 Effective atomic layer deposition procedure for Al-dopant distribution in ZnO thin films
DOI:10.1116/1.3460905 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:17 AU: Kim, Jin Yong;Choi, Yong-June;Park, Hyung-Ho;Golledge, Stephen;Johnson, David C.;
10:10:35 Monocrystalline zinc oxide films grown by atomic layer deposition
DOI:10.1016/j.tsf.2009.12.030 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Wachnicki, L.;Krajewski, T.;Luka, G.;Witkowski, B.;Kowalski, B.;Kopalko, K.;Domagala, J. Z.;Guziewicz, M.;Godlewski, M.;Guziewicz, E.;
10:10:36 Study of the aluminum doping of zinc oxide films prepared by atomic layer deposition at low temperature
DOI:10.1016/j.apsusc.2012.10.045 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Genevee, Pascal;Donsanti, Frederique;Renou, Gilles;Lincot, Daniel;
10:10:37 Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition
DOI:10.1016/j.apsusc.2014.01.027 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Nam, Taewook;Lee, Chang Wan;Kim, Hyun Jae;Kim, Hyungjun;
10:10:38 Controlled Dopant Distribution and Higher Doping Efficiencies by Surface-Functionalized Atomic Layer Deposition
DOI:10.1021/cm2014576 JN:CHEMISTRY OF MATERIALS PY:2011
TC:13 AU: Yanguas-Gil, Angel;Peterson, Kyle E.;Elam, Jeffrey W.;
10:10:39 Absorption-emission study of hydrothermally grown Al:ZnO nanostructures
DOI:10.1016/j.jallcom.2011.06.012 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:19 AU: Yogamalar, N. Rajeswari;Bose, A. Chandra;
10:10:40 Electron doping limit in Al-doped ZnO by donor-acceptor interactions
DOI:10.1063/1.4801533 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:10 AU: Noh, Ji-Young;Kim, Hanchul;Kim, Yong-Sung;Park, C. H.;
10:10:41 Electrical conductivity and photoresistance of atomic layer deposited Al-doped ZnO films
DOI:10.1116/1.4772665 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:7 AU: Mundle, Rajeh M.;Terry, Hampton S.;Santiago, Kevin;Shaw, Dante;Bahoura, Messaoud;Pradhan, Aswini K.;Dasari, Kiran;Palai, Ratnakar;
10:10:42 Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications
DOI:10.1116/1.4880823 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: Kim, Eom-Ji;Bak, Jun-Yong;Choi, Jeong-Seon;Yoon, Sung-Min;
10:10:43 The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition
DOI:10.1016/j.mseb.2010.11.014 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:18 AU: Luka, G.;Wachnicki, L.;Witkowski, B. S.;Krajewski, T. A.;Jakiela, R.;Guziewicz, E.;Godlewski, M.;
10:10:44 Characteristics and applications of plasma enhanced-atomic layer deposition
DOI:10.1016/j.tsf.2011.01.404 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Kim, Hyungjun;
10:10:45 Influence of growth temperature on the electrical and structural characteristics of conductive Al-doped ZnO thin films grown by atomic layer deposition
DOI:10.1016/j.tsf.2013.07.045 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Ahn, Cheol Hyoun;Lee, Sang Yeol;Cho, Hyung Koun;
10:10:46 Improved Performance of Organic Light-Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition
DOI:10.1021/am400140c JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:16 AU: Choi, Yong-June;Gong, Su Cheol;Park, Chang-Sun;Lee, Hong-Sub;Jang, Ji Geun;Chang, Ho Jung;Yeom, Geun Young;Park, Hyung-Ho;
10:10:47 Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et2InN(SiMe3)(2)
DOI:10.1021/am502085c JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Maeng, Wan Joo;Choi, Dong-won;Chung, Kwun-Bum;Koh, Wonyong;Kim, Gi-Yeop;Choi, Si-Young;Park, Jin-Seong;
10:10:48 Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition
DOI:10.1016/j.jallcom.2013.05.181 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Zhu, Shang-Bin;Geng, Yang;Lu, Hong-Liang;Zhang, Yuan;Sun, Qing-Qing;Ding, Shi-Jin;Zhang, David Wei;
10:10:49 Structural, electrical and optical characterization of Ti-doped ZnO films grown by atomic layer deposition
DOI:10.1016/j.jallcom.2014.07.177 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Bergum, Kristin;Hansen, Per-Anders;Fjellvag, Helmer;Nilsen, Ola;
10:10:50 Enhanced hole injection into indium-free organic red light-emitting diodes by fluorine-doping-induced texturing of a zinc oxide surface
DOI:10.1039/c4tc01442a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Choi, Yong-June;Gong, Su Cheol;Kang, Kyung-Mun;Park, Hyung-Ho;
10:10:51 Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition
DOI:10.1116/1.4885063 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Pollock, Evan B.;Lad, Robert J.;
10:10:52 Phase-coherent electron transport in (Zn, Al)O-x thin films grown by atomic layer deposition
DOI:10.1063/1.4902513 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Saha, D.;Misra, P.;Ajimsha, R. S.;Joshi, M. P.;Kukreja, L. M.;
10:10:53 Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition
DOI:10.1016/j.apsusc.2011.07.124 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Cheng, Yung-Chen;
10:10:54 ALD of ZnO using diethylzinc as metal-precursor and oxygen as oxidizing agent
DOI:10.1016/j.apsusc.2011.06.133 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Janocha, E.;Pettenkofer, C.;
10:10:55 Cycle time effects on growth and transistor characteristics of spatial atomic layer deposition of zinc oxide
DOI:10.1116/1.3670878 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:9 AU: Nelson, Shelby F.;Levy, David H.;Tutt, Lee W.;Burberry, Mitchell;
10:10:56 Atomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell
DOI:10.1116/1.4767837 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Chen, Sheng-Hui;Chan, Shih-Hao;Chen, Chun-Ko;Tseng, Shao-Ze;Hsu, Chieh-Hsiang;Cho, Wen-Hao;
10:10:57 Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes
DOI:10.1116/1.4738749 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:6 AU: Gong, Su Cheol;Choi, Yong-June;Kim, Hyuncheol;Park, Chang-Sun;Park, Hyung-Ho;Jang, Ji Geun;Chang, Ho Jung;Yeom, Geun Young;
10:10:58 Atomic layer deposition of Al-doped ZnO thin films
DOI:10.1116/1.4757764 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:8 AU: Tynell, Tommi;Yamauchi, Hisao;Karppinen, Maarit;Okazaki, Ryuji;Terasaki, Ichiro;
10:10:59 Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition
DOI:10.1063/1.4901732 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ahn, Cheol Hyoun;Kim, So Hee;Yun, Myeong Gu;Cho, Hyung Koun;
10:10:60 Effect of disorder on carrier transport in ZnO thin films grown by atomic layer deposition at different temperatures
DOI:10.1063/1.4815941 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Saha, D.;Das, Amit. K.;Ajimsha, R. S.;Misra, P.;Kukreja, L. M.;
10:10:61 Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
DOI:10.1116/1.4767813 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Jung, Tae-Hoon;Park, Jin-Seong;Kim, Dong-Ho;Jeong, Yongsoo;Park, Sung-Gyu;Kwon, Jung-Dae;
10:10:62 Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate
DOI:10.1016/j.tsf.2010.07.069 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Chen, H. C.;Chen, M. J.;Liu, T. C.;Yang, J. R.;Shiojiri, M.;
10:10:63 Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization
DOI:10.1016/j.tsf.2012.06.050 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Muhammad, Nauman Malik;Duraisamy, Navaneethan;Dang, Hyun-Woo;Jo, Jeongdai;Choi, Kyung-Hyun;
10:10:64 Influence of post-deposition annealing on the electrical properties of zinc oxide thin films
DOI:10.1016/j.tsf.2014.10.100 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Park, Hui Kyung;Jo, Jaeseung;Hong, Hee Kyeung;Heo, Jaeyeong;
10:10:65 Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach
DOI:10.1063/1.4852655 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Afshar, Amir;Cadien, Kenneth C.;
10:10:66 Structure and morphology of aluminium doped Zinc-oxide layers prepared by atomic layer deposition
DOI:10.1016/j.tsf.2011.10.113 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Baji, Zs.;Labadi, Z.;Horvath, Z. E.;Barsony, I.;
10:10:67 Influence of solvents on deposition mechanism of Al-doped ZnO films synthesized by cold wall aerosol-assisted chemical vapor deposition
DOI:10.1016/j.tsf.2013.07.002 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Qin, Xiu Juan;Zhao, Lin;Shao, Guang Jie;Wang, Na;
10:10:68 Highly conductive epitaxial ZnO layers deposited by atomic layer deposition
DOI:10.1016/j.tsf.2014.04.047 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Baji, Zs.;Labadi, Z.;Molnar, Gy.;Pecz, B.;Vad, K.;Horvath, Z. E.;Szabo, P. J.;Nagata, T.;Volk, J.;
10:10:69 Carrier transport in InxGa1-xN thin films grown by modified activated reactive evaporation
DOI:10.1063/1.3630000 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Meher, S. R.;Naidu, R. V. Muniswami;Biju, Kuyyadi P.;Subrahmanyam, A.;Jain, Mahaveer K.;
10:10:70 The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method
DOI:10.1016/j.jcrysgro.2012.12.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Yuan, N. Y.;Wang, S. Y.;Tan, C. B.;Wang, X. Q.;Chen, G. G.;Ding, J. N.;
10:10:71 Electron doping of ALD-grown ZnO thin films through Al and P substitutions
DOI:10.1007/s10853-012-6942-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Tynell, T.;Okazaki, R.;Terasaki, I.;Yamauchi, H.;Karppinen, M.;
10:10:72 Atomic layer deposition of Zn1-xMgxO:Al transparent conducting films
DOI:10.1007/s10853-013-7832-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:2 AU: Luka, G.;Witkowski, B. S.;Wachnicki, L.;Goscinski, K.;Jakiela, R.;Guziewicz, E.;Godlewski, M.;Zielony, E.;Bieganski, P.;Placzek-Popko, E.;Lisowski, W.;Sobczak, J. W.;Jablonski, A.;
10:10:73 The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD (vol 257, pg 3776, 2011)
DOI:10.1016/j.apsusc.2011.04.059 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Kim, Doyoung;Kang, Hyemin;Kim, Jae-Min;Kim, Hyungjun;
10:10:74 IGZO thin film transistor biosensors functionalized with ZnO nanorods and antibodies
DOI:10.1016/j.bios.2013.10.043 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:7 AU: Shen, Yi-Chun;Yang, Chun-Hsu;Chen, Shu-Wen;Wu, Shou-Hao;Yang, Tsung-Lin;Huang, Jian-Jang;
10:10:75 Light harvesting analysis of a nano-cylinder structure on crystalline silicon using the Mie scattering model
DOI:10.1016/j.jnoncrysol.2012.01.066 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:1 AU: Chen, Sheng-Hui;Yeh, Yu-Wen;Tseng, Shao-Ze;Shih, I-Ting;Chan, Chia-Hua;Lee, Cheng-Chung;
10:10:76 Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs
DOI:10.1016/j.materresbull.2012.04.126 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:2 AU: Lee, Woo-Jung;Ma, Jin Won;Bae, Jung Min;Cho, Mann-Ho;Ahn, Jae Pyung;
10:10:77 Highly active oxide photocathode for photoelectrochemical water reduction
DOI:10.1038/NMAT3017 JN:NATURE MATERIALS PY:2011
TC:481 AU: Paracchino, Adriana;Laporte, Vincent;Sivula, Kevin;Graetzel, Michael;Thimsen, Elijah;
10:10:78 Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
DOI:10.1016/j.solmat.2013.06.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Smit, S.;Garcia-Alonso, D.;Bordihn, S.;Hanssen, M. S.;Kessels, W. M. M.;
10:10:79 Changes in electrical and structural properties of indium oxide thin films through post-deposition annealing
DOI:10.1016/j.tsf.2011.06.061 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Kato, Kazuhiro;Omoto, Hideo;Tomioka, Takao;Takamatsu, Atsushi;
10:11:1 RF sputtering enhanced the morphology and photoluminescence of multi-oriented ZnO nanostructure produced by chemical vapor deposition
DOI:10.1016/j.jallcom.2012.08.119 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:22 AU: Al-Salman, Husam S.;Abdullah, M. J.;
10:11:2 Sol-gel derived Li-Mg co-doped ZnO films: Preparation and characterization via XRD, XPS, FESEM
DOI:10.1016/j.jallcom.2011.09.058 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:42 AU: Aksoy, Seval;Caglar, Yasemin;Ilican, Saliha;Caglar, Mujdat;
10:11:3 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method
DOI:10.1016/j.jallcom.2013.06.192 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Pan, Zhanchang;Luo, Junming;Tian, Xinlong;Wu, Shoukun;Chen, Chun;Deng, Jianfeng;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:11:4 Sn doping effects on the electro-optical properties of sol gel derived transparent ZnO films
DOI:10.1016/j.apsusc.2010.05.052 JN:APPLIED SURFACE SCIENCE PY:2010
TC:73 AU: Ilican, Saliha;Caglar, Mujdat;Caglar, Yasemin;
10:11:5 Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films (Retracted article. See vol. 351, pg. 1224, 2015)
DOI:10.1016/j.apsusc.2012.11.139 JN:APPLIED SURFACE SCIENCE PY:2013
TC:21 AU: Pan, Zhanchang;Tian, Xinlong;Wu, Shoukun;Yu, Xia;Li, Zhuliang;Deng, Jianfeng;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:11:6 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method
DOI:10.1016/j.jallcom.2013.04.132 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Pan, Zhanchang;Zhang, Pengwei;Tian, Xinlong;Cheng, Guo;Xie, Yinghao;Zhang, Huangchu;Zeng, Xiangfu;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:11:7 Growth and characterization of the Al-doped and Al-Sn co-doped ZnO nanostructures
DOI:10.1016/j.ceramint.2013.01.081 JN:CERAMICS INTERNATIONAL PY:2013
TC:10 AU: Tian, Xinlong;Pan, Zhanchang;Zhang, Huangchu;Fan, Hong;Zeng, Xiangfu;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:11:8 Influence of Al doping on structural and optical properties of Mg-Al co-doped ZnO thin films prepared by sol-gel method
DOI:10.1016/j.jallcom.2013.11.061 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:14 AU: Fang, Dongyu;Lin, Kui;Xue, Tao;Cui, Can;Chen, Xiaoping;Yao, Pei;Li, Huijun;
10:11:9 Effect of Na doping on the microstructures and optical properties of ZnO nanorods
DOI:10.1016/j.jallcom.2012.11.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:19 AU: Ilican, Saliha;
10:11:10 Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures
DOI:10.1016/j.mssp.2013.09.023 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Pan, Zhanchang;Xiao, Yonghao;Tian, Xinlong;Wu, Shoukun;Chen, Chun;Deng, Jianfeng;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:11:11 Highly conducting and wide-band transparent F-doped Zn1-xMgxO thin films for optoelectronic applications
DOI:10.1016/j.jallcom.2014.02.181 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Guo, Y. M.;Zhu, L. P.;Jiang, J.;Li, Y. G.;Hu, L.;Xu, H. B.;Ye, Z. Z.;
10:11:12 Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering
DOI:10.1016/j.apsusc.2011.06.134 JN:APPLIED SURFACE SCIENCE PY:2011
TC:45 AU: Ma, Ligang;Ma, Shuyi;Chen, Haixia;Ai, Xiaoqian;Huang, Xinli;
10:11:13 On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study
DOI:10.1016/j.jallcom.2014.03.177 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Slassi, A.;Naji, S.;Benyoussef, A.;Hamedoun, M.;El Kenz, A.;
10:11:14 Influence of annealing temperature on the structural and optical properties of Mg-Al co-doped ZnO thin films prepared via sol gel method
DOI:10.1016/j.ceramint.2013.11.030 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Fang, Dongyu;Yao, Pei;Li, Huijun;
10:11:15 Growth and photocatalytic activity of ZnO nanosheets stabilized by Ag nanoparticles
DOI:10.1016/j.jallcom.2011.01.145 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:33 AU: Zhang, Danhui;Liu, Xiaoheng;Wang, Xin;
10:11:16 Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol-gel dip-coating process
DOI:10.1016/j.tsf.2014.04.051 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Lee, Min-I;Huang, Mao-Chia;Legrand, David;Lerondel, Gilles;Lin, Jing-Chie;
10:11:17 Enhancement of green emission from Sn-doped ZnO nanowires
DOI:10.1016/j.optmat.2010.08.029 JN:OPTICAL MATERIALS PY:2011
TC:24 AU: Jung, Mi;Kim, Sangdan;Ju, Sanghyun;
10:11:18 Highly transparent and conducting fluorine-doped ZnO thin films prepared by pulsed laser deposition
DOI:10.1016/j.solmat.2010.11.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:48 AU: Cao, Ling;Zhu, Liping;Jiang, Jie;Zhao, Ran;Ye, Zhizhen;Zhao, Buihui;
10:11:19 Investigation of optical and electronic properties in Al-Sn co-doped ZnO thin films
DOI:10.1016/j.mssp.2012.06.020 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Pan, Zhanchang;Tian, Xinlong;Hu, Guanghui;Xiao, Chumin;Wei, Zhigang;Wu, Shoukun;Li, Zhuliang;Deng, Jianfeng;
10:11:20 Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films
DOI:10.1016/j.tsf.2010.03.042 JN:THIN SOLID FILMS PY:2010
TC:36 AU: Kim, Chang Eun;Moon, Pyung;Kim, Sungyeon;Myoung, Jae-Min;Jang, Hyeon Woo;Bang, Jungsik;Yun, Ilgu;
10:11:21 On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation
DOI:10.1016/j.apsusc.2011.03.118 JN:APPLIED SURFACE SCIENCE PY:2011
TC:22 AU: Vimalkumar, T. V.;Poornima, N.;Jinesh, K. B.;Kartha, C. Sudha;Vijayakumar, K. P.;
10:11:22 Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
DOI:10.1016/j.jallcom.2014.05.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Malek, M. F.;Mamat, M. H.;Musa, M. Z.;Khusaimi, Z.;Sandan, M. Z.;Suriani, A. B.;Ishak, A.;Saurdi, I.;Rahman, S. A.;Rusop, M.;
10:11:23 Structural and optical properties of copper doped ZnO films derived by sol-gel
DOI:10.1016/j.apsusc.2011.11.033 JN:APPLIED SURFACE SCIENCE PY:2012
TC:28 AU: Caglar, M.;Yakuphanoglu, F.;
10:11:24 Sonicated sol-gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (002) orientation enhances the final properties
DOI:10.1016/j.jallcom.2013.07.202 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:9 AU: Malek, M. F.;Mamat, M. H.;Khusaimi, Z.;Sahdan, M. Z.;Musa, M. Z.;Zainun, A. R.;Suriani, A. B.;Sin, N. D. Md;Abd Hamid, S. B.;Rusop, M.;
10:11:25 Optical properties of undoped and Al-doped ZnO nanostructures grown from aqueous solution on glass substrate
DOI:10.1016/j.optmat.2012.05.010 JN:OPTICAL MATERIALS PY:2012
TC:23 AU: Mazilu, M.;Tigau, N.;Musat, V.;
10:11:26 Investigation of AlF3 doped ZnO thin films prepared by RF magnetron sputtering
DOI:10.1016/j.ceramint.2011.08.007 JN:CERAMICS INTERNATIONAL PY:2012
TC:17 AU: Houng, Boen;Chen, Han Bin;
10:11:27 Doping effects of group-IIIA elements on physical properties of ZnMgXO (X: Al, Ga, In, Tl) transparent conducting oxide films prepared by RF magnetron sputtering
DOI:10.1016/j.jallcom.2014.07.192 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Jeong, Sang-Hun;Park, Jang-Ho;Lee, Byung-Teak;
10:11:28 The structural properties of Al doped ZnO films depending on the thickness and their effect on the electrical properties
DOI:10.1016/j.apsusc.2011.07.022 JN:APPLIED SURFACE SCIENCE PY:2011
TC:19 AU: Ri, Kang Hyon;Wang, Yunbo;Zhou, Wen Li;Gao, Jun Xiong;Wang, Xiao Jing;Yu, Jun;
10:11:29 Synthesis of Zn1-xMgxO alloyed nanostructures and the crystal evolution in annealing process
DOI:10.1016/j.jallcom.2014.07.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Xiao, Mu;Lu, Yangfan;Li, Yaguang;Zhu, Liping;Ye, Zhizhen;
10:11:30 Effect of annealing on the structural, topographical and optical properties of sol-gel derived ZnO and AZO thin films
DOI:10.1016/j.matlet.2012.05.130 JN:MATERIALS LETTERS PY:2012
TC:20 AU: Sengupta, Joydip;Sahoo, R. K.;Mukherjee, C. D.;
10:11:31 Preparation and characterization of vertically aligned ZnO microrods on glass substrate
DOI:10.1016/j.matlet.2013.01.116 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Tian, Xinlong;Pan, Zhanchang;Zhang, Huangchu;Xie, Yinghao;Zeng, Xiangfu;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:11:32 Metal-semiconductor transition in Nb-doped ZnO thin films prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2010.04.068 JN:THIN SOLID FILMS PY:2010
TC:16 AU: Shao, Jingzhen;Dong, Weiwei;Li, Da;Tao, Ruhua;Deng, Zanhong;Wang, Tao;Meng, Gang;Zhou, Shu;Fang, Xiaodong;
10:11:33 Controlled fabrication of oriented co-doped ZnO clustered nanoassemblies
DOI:10.1016/j.jcis.2010.05.036 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:13 AU: Barick, K. C.;Aslam, M.;Dravid, Vinayak P.;Bahadur, D.;
10:11:34 First-principles study of the electronic structure of Al and Sn co-doping ZnO system
DOI:10.1016/j.mssp.2013.04.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Qu, Xiurong;Lu, Shuchen;Jia, Dechang;Zhou, Sheng;Meng, Qingyu;
10:11:35 Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
DOI:10.1016/j.tsf.2011.06.078 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Carreras, Paz;Antony, Aldrin;Rojas, Fredy;Bertomeu, Joan;
10:11:36 Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering
DOI:10.1016/j.actamat.2011.07.068 JN:ACTA MATERIALIA PY:2011
TC:16 AU: Noirfalise, X.;Godfroid, T.;Guisbiers, G.;Snyders, R.;
10:11:37 Investigation of the crystallinity, structural, and optical properties in hydrotreating of Li-W co-doped ZnO thin films
DOI:10.1007/s00339-014-8234-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Chen, Yichuan;Hu, Yuehui;Zhang, Xiaohua;Ma, Defu;Liu, Ximei;Zhang, Zhiming;Xu, Bin;
10:11:38 Effects of Mg doping rate on physical properties of Mg and Al co-doped Zn1-x-0.02MgxAl0.02O transparent conducting oxide films prepared by rf magnetron sputtering
DOI:10.1016/j.jallcom.2014.08.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Jeong, Sang-Hun;Park, Jang-Ho;Lee, Byung-Teak;
10:11:39 Co-doping effects of Mg and Be on properties of ZnMgBeGaO UV-range transparent conductive oxide films prepared by RF magnetron sputtering
DOI:10.1016/j.jallcom.2014.06.148 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Park, Jang-Ho;Cuong, Hoang Ba;Jeong, Sang-Hun;Lee, Byung-Teak;
10:11:40 Rapid thermal annealed Al-doped ZnO film for a UV detector
DOI:10.1016/j.matlet.2010.11.065 JN:MATERIALS LETTERS PY:2011
TC:30 AU: Kim, Joondong;Yun, Ju-Hyung;Jee, Sang-Won;Park, Yun Chang;Ju, Minkyu;Han, Seokkyu;Kim, Youngkuk;Kim, Jae-Hyun;Anderson, Wayne A.;Lee, Jung-Ho;Yi, Junsin;
10:11:41 Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique
DOI:10.1016/j.jallcom.2014.07.086 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Bedia, F. Z.;Bedia, A.;Maloufi, N.;Aillerie, M.;Genty, F.;Benyoucef, B.;
10:11:42 Theoretical and experimental studies on electronic structure and optical properties of Cu-doped ZnO
DOI:10.1016/j.jallcom.2013.11.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Xia, Chuanhui;Wang, Feng;Hu, Chunlian;
10:11:43 Electro-optical characterization of ZnO/ZnMgO structure grown on p-type Si (111) by PA-MBE method
DOI:10.1016/j.jallcom.2013.10.256 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:9 AU: Pietrzyk, M. A.;Zielony, E.;Stachowicz, M.;Reszka, A.;Placzek-Popko, E.;Wierzbicka, A.;Przezdziecka, E.;Droba, A.;Kozanecki, A.;
10:11:44 The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film
DOI:10.1016/j.mssp.2013.08.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:7 AU: Wang, C. Y.;Ma, S. Y.;Li, F. M.;Chen, Y.;Xu, X. L.;Wang, T.;Yang, F. C.;Zhao, Q.;Liu, J.;Zhang, X. L.;Li, X. B.;Yang, X. H.;Zhu, J.;
10:11:45 Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating
DOI:10.1016/j.apsusc.2011.06.136 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Casanova, J. R.;Heredia, E. A.;Bojorge, C. D.;Canepa, H. R.;Kellermann, G.;Craievich, A. F.;
10:11:46 Effect of sputtering power on the properties of ZnO:Ga transparent conductive oxide films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target
DOI:10.1016/j.apsusc.2013.01.163 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Ahn, Kyung-Jun;Park, Ji-Hyeon;Shin, Beom-Ki;Lee, Woong;Yeom, Geun Young;Myoung, Jae-Min;
10:11:47 Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization
DOI:10.1016/j.apsusc.2012.12.126 JN:APPLIED SURFACE SCIENCE PY:2013
TC:17 AU: Drmosh, Qasem A.;Rao, Saleem G.;Yamani, Zain H.;Gondal, Mohammed A.;
10:11:48 Blue-green and red luminescence from non-polar ZnO:Pb films
DOI:10.1016/j.apsusc.2013.01.057 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Li, X. B.;Ma, S. Y.;Li, F. M.;Yang, F. C.;Liu, J.;Zhang, X. L.;Zhao, Q.;Yang, X. H.;Wang, C. Y.;Zhu, J.;Zhu, C. T.;Wang, X.;
10:11:49 Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells
DOI:10.1063/1.4811538 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Estrich, N. A.;Hook, D. H.;Smith, A. N.;Leonard, J. T.;Laughlin, B.;Maria, J. -P.;
10:11:50 Optical, electrical and mechanical properties of Ga-doped ZnO thin films under different sputtering powers
DOI:10.1016/j.optmat.2014.10.004 JN:OPTICAL MATERIALS PY:2014
TC:5 AU: Chang, Sheng Hsiung;Cheng, Hsin-Ming;Tien, Chuen-Lin;Lin, Shih-Chin;Chuang, Kie-Pin;
10:11:51 The properties of radio frequency sputtered transparent and conducting ZnO:F films on polyethylene naphthalate substrate
DOI:10.1016/j.tsf.2010.10.019 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Bowen, A.;Li, J.;Lewis, J.;Sivaramakrishnan, K.;Alford, T. L.;Iyer, S.;
10:11:52 Influence of various sol concentrations on stress/strain and properties of ZnO thin films synthesised by sol-gel technique
DOI:10.1016/j.tsf.2012.11.095 JN:THIN SOLID FILMS PY:2013
TC:14 AU: Malek, Mohd Firdaus;Mamat, Mohamad Hafiz;Sahdan, Mohd Zainizan;Zahidi, Musa Mohamed;Khusaimi, Zuraida;Mahmood, Mohamad Rusop;
10:11:53 Influence of growth temperature on the optical and structural properties of ultrathin ZnO films
DOI:10.1016/j.jallcom.2011.02.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:13 AU: Chiang, Tun-Yuan;Dai, Ching-Liang;Lian, Der-Ming;
10:11:54 Enhanced blue photoluminescence realized by copper diffusion doping of ZnO thin films
DOI:10.1364/OME.3.001733 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:2 AU: Allabergenov, Bunyod;Chung, Seok-Hwan;Jeong, Soon Moon;Kim, Sungjin;Choi, Byeongdae;
10:11:55 Synthesis of conducting Zn1-xMgxO: Al layers by spray pyrolysis for photovoltaic application
DOI:10.1016/j.tsf.2011.01.184 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Prathap, P.;Revathi, N.;Reddy, A. Suryanarayana;Subbaiah, Y. P. Venkata;Reddy, K. T. Ramakrishna;
10:11:56 Electronic structure and optical transition in heavy metal doped ZnO by first-principle calculations
DOI:10.1016/j.commatsci.2011.10.003 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:4 AU: Zhang, X. D.;Guo, M. L.;Shen, Y. Y.;Liu, C. L.;Xue, Y. H.;Zhu, F.;Zhang, L. H.;
10:11:57 Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target
DOI:10.1016/j.mssp.2010.12.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:8 AU: Shin, Beom-Ki;Lee, Tae-Il;Kar, Jyoti Prakash;Lee, Min-Jung;Park, Kang-Il;Ahn, Kyung-Jun;Yeom, Keun-Young;Cho, Joong-Hwee;Myoung, Jae-Min;
10:11:58 Effect of the electrochemical technique on nanocrystalline ZnO electrodeposition, its structural, morphological and photoelectrochemical properties
DOI:10.1016/j.tsf.2013.04.024 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Chettah, Hamdane;Abdi, Djamila;
10:11:59 Synthesis and characterization of multipod zinc oxide whiskers synthesized via a modified self-propagating high-temperature synthesis method
DOI:10.1016/j.jallcom.2011.09.033 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Peng, Cheng-Hsiung;Chang, Ching-Chih;Hwang, Chyi-Ching;
10:11:60 ZnO-NiO hetero-nanostructures as highly sensitive and selective triethylamine sensor
DOI:10.1063/1.4890938 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Guo, Ting;Luo, Yidong;Zhang, Yujun;Lin, Yuan-Hua;Nan, Ce-Wen;
10:11:61 Nanostructured ZnO thin films prepared by sol-gel spin-coating
DOI:10.1016/j.apsusc.2014.08.046 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Heredia, E.;Bojorge, C.;Casanova, J.;Canepa, H.;Craievich, A.;Kellermann, G.;
10:11:62 The changes in structural and optical properties of (ZnO:AlN) thin films fabricated at different RF powers of ZnO target
DOI:10.1016/j.ceramint.2012.10.110 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Ismail, A.;Abdullah, M. J.;
10:11:63 Strongly-enhanced near-band-edge photoluminescence of Nb-implanted ZnO films
DOI:10.1016/j.jcrysgro.2011.01.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:0 AU: Kim, Chang Oh;Shin, Dong Hee;Choi, Suk-Ho;
10:11:64 Structure and optical properties of pure and doped ZnO 1D nanostructures
DOI:10.1016/j.matlet.2012.10.041 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Zhou, Weichang;Tang, Dongsheng;Liu, Ruibin;Zou, Bingsuo;
10:11:65 Growth and characterization of ZnO and MgxZn1-xO thin films by aerosol assisted chemical vapor deposition technique
DOI:10.1016/j.tsf.2011.12.075 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Kaushik, Vipin K.;Ganguli, Tapas;Kumar, Ravi;Mukherjee, C.;Sen, P. K.;
10:12:1 Ultrasensitive and Highly Selective Gas Sensors Based on Electrospun SnO2 Nanofibers Modified by Pd Loading
DOI:10.1002/adfm.201001251 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:112 AU: Yang, Dae-Jin;Kamienchick, Itai;Youn, Doo Young;Rothschild, Avner;Kim, Il-Doo;
10:12:2 Advances and new directions in gas-sensing devices
DOI:10.1016/j.actamat.2012.10.041 JN:ACTA MATERIALIA PY:2013
TC:32 AU: Kim, Il-Doo;Rothschild, Avner;Tuller, Harry L.;
10:12:3 Facile Control of C2H5OH Sensing Characteristics by Decorating Discrete Ag Nanoclusters on SnO2 Nanowire Networks
DOI:10.1021/am200647f JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:73 AU: Hwang, In-Sung;Choi, Joong-Ki;Woo, Hyung-Sik;Kim, Sun-Jung;Jung, Se-Yeon;Seong, Tae-Yeon;Kim, Il-Doo;Lee, Jong-Heun;
10:12:4 Template-free solvothermal synthesis of hollow hematite spheres and their applications in gas sensors and Li-ion batteries
DOI:10.1039/c0jm03516e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:71 AU: Kim, Hyo-Joong;Choi, Kwon-Il;Pan, Anqiang;Kim, Il-Doo;Kim, Hae-Ryong;Kim, Kang-Min;Na, Chan Woong;Cao, Guozhong;Lee, Jong-Heun;
10:12:5 Thin-Wall Assembled SnO2 Fibers Functionalized by Catalytic Pt Nanoparticles and their Superior Exhaled-Breath-Sensing Properties for the Diagnosis of Diabetes
DOI:10.1002/adfm.201202729 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:49 AU: Shin, Jungwoo;Choi, Seon-Jin;Lee, Inkun;Youn, Doo-Young;Park, Chong Ook;Lee, Jong-Heun;Tuller, Harry L.;Kim, Il-Doo;
10:12:6 Enhancement of Ethanol Vapor Sensing of TiO2 Nanobelts by Surface Engineering
DOI:10.1021/am100707h JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:66 AU: Hu, Peiguang;Du, Guojun;Zhou, Weijia;Cui, Jingjie;Lin, Jianjian;Liu, Hong;Liu, Duo;Wang, Jiyang;Chen, Shaowei;
10:12:7 Decoration of ZnO nanowires with Pt nanoparticles and their improved gas sensing and photocatalytic performance
DOI:10.1088/0957-4484/21/28/285501 JN:NANOTECHNOLOGY PY:2010
TC:50 AU: Zhang, Yuan;Xu, Jiaqiang;Xu, Pengcheng;Zhu, Yongheng;Chen, Xuedong;Yu, Weijun;
10:12:8 Honeycomb-like Periodic Porous LaFeO3 Thin Film Chemiresistors with Enhanced Gas-Sensing Performances
DOI:10.1021/am504386q JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:9 AU: Dai, Zhengfei;Lee, Chul-Soon;Kim, Bo-Young;Kwak, Chang-Hoon;Yoon, Ji-Wook;Jeong, Hyun-Mook;Lee, Jong-Heun;
10:12:9 Ultrasensitive and selective C2H5OH sensors using Rh-loaded In2O3 hollow spheres
DOI:10.1039/c1jm14252f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:33 AU: Kim, Sun-Jung;Hwang, In-Sung;Na, Chan Woong;Kim, Il-Doo;Kang, Yun Chan;Lee, Jong-Heun;
10:12:10 Prominent Reducing Gas-Sensing Performances of n-SnO2 Nanowires by Local Creation of p-n Heterojunctions by Functionalization with p-Cr2O3 Nanoparticles
DOI:10.1021/am504164j JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Choi, Sun-Woo;Katoch, Akash;Kim, Jae-Hun;Kim, Sang Sub;
10:12:11 Ultrasensitive Hydrogen Sensor Based on Pd-0-Loaded SnO2 Electrospun Nanofibers at Room Temperature
DOI:10.1021/am3028553 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:86 AU: Wang, Zhaojie;Li, Zhenyu;Jiang, Tingting;Xu, Xiuru;Wang, Ce;
10:12:12 Fast Responding Exhaled-Breath Sensors Using WO3 Hemitubes Functionalized by Graphene-Based Electronic Sensitizers for Diagnosis of Diseases
DOI:10.1021/am501394r JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:11 AU: Choi, Seon-Jin;Fuchs, Franz;Demadrille, Renaud;Grevin, Benjamin;Jang, Bong-Hoon;Lee, Seo-Jin;Lee, Jong-Heun;Tuller, Harry L.;Kim, Il-Doo;
10:12:13 Selective Detection of Acetone and Hydrogen Sulfide for the Diagnosis of Diabetes and Halitosis Using SnO2 Nanofibers Functionalized with Reduced Graphene Oxide Nanosheets
DOI:10.1021/am405088q JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:27 AU: Choi, Seon-Jin;Jang, Bong-Hoon;Lee, Seo-Jin;Min, Byoung Koun;Rothschild, Avner;Kim, Il-Doo;
10:12:14 Bi-functional co-sensitization of graphene oxide sheets and Ir nanoparticles on p-type Co3O4 nanofibers for selective acetone detection
DOI:10.1039/c4tb00767k JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2014
TC:2 AU: Choi, Seon-Jin;Ryu, Won-Hee;Kim, Sang-Joon;Cho, Hee-Jin;Kim, Il-Doo;
10:12:15 Gold-Nanoparticle-Functionalized In2O3 Nanowires as CO Gas Sensors with a Significant Enhancement in Response
DOI:10.1021/am101259t JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:38 AU: Singh, Nandan;Gupta, Raju Kumar;Lee, Pooi See;
10:12:16 Hollow SnO2/alpha-Fe2O3 spheres with a double-shell structure for gas sensors
DOI:10.1039/c3ta13707d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:22 AU: Sun, Peng;Zhou, Xin;Wang, Chen;Shimanoe, Kengo;Lu, Geyu;Yamazoe, Noboru;
10:12:17 A novel approach to improving oxidizing-gas sensing ability of p-CuO nanowires using biased radial modulation of a hole-accumulation layer
DOI:10.1039/c4tc01182a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Choi, Sun-Woo;Katoch, Akash;Kim, Jae-Hun;Kim, Sang Sub;
10:12:18 Improved Methane Sensing Properties of Co-Doped SnO2 Electrospun Nanofibers
DOI:10.1155/2013/173232 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:3 AU: Chen, Weigen;Zhou, Qu;Xu, Lingna;Wan, Fu;Peng, Shudi;Zeng, Wen;
10:12:19 Electronic sensitization of the response to C2H5OH of p-type NiO nanofibers by Fe doping
DOI:10.1088/0957-4484/24/44/444005 JN:NANOTECHNOLOGY PY:2013
TC:17 AU: Yoon, Ji-Wook;Kim, Hyo-Joong;Kim, Il-Doo;Lee, Jong-Heun;
10:12:20 V-groove SnO2 nanowire sensors: fabrication and Pt-nanoparticle decoration
DOI:10.1088/0957-4484/24/2/025504 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Sun, Gun-Joo;Choi, Sun-Woo;Jung, Sung-Hyun;Katoch, Akash;Kim, Sang Sub;
10:12:21 Low-Temperature Growth of SnO2 Nanorod Arrays and Tunable n-p-n Sensing Response of a ZnO/SnO2 Heterojunction for Exclusive Hydrogen Sensors
DOI:10.1002/adfm.201002115 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:55 AU: Huang, Hui;Gong, Hua;Chow, Chee Lap;Guo, Jun;White, Timothy John;Tse, Man Siu;Tan, Ooi Kiang;
10:12:22 Highly sensitive room-temperature CO gas sensors: Pt and Pd nanoparticle-decorated In2O3 flower-like nanobundles
DOI:10.1039/c2jm31180a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:32 AU: Lai, Hsiang-Yu;Chen, Chun-Hua;
10:12:23 Ring-like PdO-NiO with lamellar structure for gas sensor application
DOI:10.1039/c2jm16509k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:17 AU: Wang, Lili;Lou, Zheng;Wang, Rui;Fei, Teng;Zhang, Tong;
10:12:24 An approach to detecting a reducing gas by radial modulation of electron-depleted shells in core-shell nanofibers
DOI:10.1039/c3ta13087h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:18 AU: Katoch, Akash;Choi, Sun-Woo;Sun, Gun-Joo;Kim, Sang Sub;
10:12:25 ZnO-SnO2 nanotubes surface engineered by Ag nanoparticles: synthesis, characterization, and highly enhanced HCHO gas sensing properties
DOI:10.1039/c3tc00689a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:21 AU: Xu, Lin;Xing, Ruiqing;Song, Jian;Xu, Wen;Song, Hongwei;
10:12:26 High gas sensing performance of one-step-synthesized Pd-ZnO nanoflowers due to surface reactions and modifications
DOI:10.1088/0957-4484/22/21/215501 JN:NANOTECHNOLOGY PY:2011
TC:31 AU: Xing, Li-Li;Ma, Chun-Hua;Chen, Zhao-Hui;Chen, Yu-Jin;Xue, Xin-Yu;
10:12:27 Platelet-like nickel hydroxide: Synthesis and the transferring to nickel oxide as a gas sensor
DOI:10.1016/j.jcis.2013.09.019 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:6 AU: Zhu, Guoxing;Xu, Huan;Liu, Yuanjun;Xi, Chunyan;Yang, Jing;Shen, Xiaoping;Zhu, Jun;Yang, Jinglei;
10:12:28 Functionalization of selectively grown networked SnO2 nanowires with Pd nanodots by gamma-ray radiolysis
DOI:10.1088/0957-4484/22/22/225501 JN:NANOTECHNOLOGY PY:2011
TC:27 AU: Choi, Sun-Woo;Jung, Sung-Hyun;Kim, Sang Sub;
10:12:29 The Role of NiO Doping in Reducing the Impact of Humidity on the Performance of SnO2-Based Gas Sensors: Synthesis Strategies, and Phenomenological and Spectroscopic Studies
DOI:10.1002/adfm.201101154 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:53 AU: Kim, Hae-Ryong;Haensch, Alexander;Kim, Il-Doo;Barsan, Nicolae;Weimar, Udo;Lee, Jong-Heun;
10:12:30 Tin Dioxide Sensing Layer Grown on Tubular Nanostructures by a Non-Aqueous Atomic Layer Deposition Process
DOI:10.1002/adfm.201001572 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:33 AU: Marichy, Catherine;Donato, Nicola;Willinger, Marc-Georg;Latino, Mariangela;Karpinsky, Dmitry;Yu, Seung-Ho;Neri, Giovanni;Pinna, Nicola;
10:12:31 Co-Doped Branched ZnO Nanowires for Ultraselective and Sensitive Detection of Xylene
DOI:10.1021/am506674u JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Woo, Hyung-Sik;Kwak, Chang-Hoon;Chung, Jae-Ho;Lee, Jong-Heun;
10:12:32 Enhanced Ethanol Sensing Characteristics of In2O3-Decorated NiO Hollow Nanostructures via Modulation of Hole Accumulation Layers
DOI:10.1021/am5051923 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Kim, Hyo-Joong;Jeong, Hyun-Mook;Kim, Tae-Hyung;Chung, Jae-Ho;Kang, Yun Chan;Lee, Jong-Heun;
10:12:33 Fabrication of tin dioxide nanowires with ultrahigh gas sensitivity by atomic layer deposition of platinum
DOI:10.1039/c1jm10785b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:23 AU: Lin, Yu-Hung;Hsueh, Yang-Chih;Lee, Po-Sheng;Wang, Chih-Chieh;Wu, Jyh Ming;Perng, Tsong-Pyng;Shih, Han C.;
10:12:34 Optimization of a zinc oxide urchin-like structure for high-performance gas sensing
DOI:10.1039/c1jm13696h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:23 AU: Hoang Nhat Hieu;Nguyen Minh Vuong;Jung, Hyuck;Jang, Dong Mi;Kim, Dojin;Kim, Hyojin;Hong, Soon-Ku;
10:12:35 Highly sensitive and selective trimethylamine sensor using one-dimensional ZnO-Cr2O3 hetero-nanostructures
DOI:10.1088/0957-4484/23/24/245501 JN:NANOTECHNOLOGY PY:2012
TC:24 AU: Woo, Hyung-Sik;Na, ChanWoong;Kim, Il-Doo;Lee, Jong-Heun;
10:12:36 Metal ion-doped SnO2 ordered porous films and their strong gas sensing selectivity
DOI:10.1063/1.3358389 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Jia, Lichao;Cai, Weiping;Wang, Hongqiang;
10:12:37 Outstanding H-2 Sensing Performance of Pd Nanoparticle-Decorated ZnO Nanorod Arrays and the Temperature-Dependent Sensing Mechanisms
DOI:10.1021/am302294v JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:18 AU: Chang, Chia-Ming;Hon, Min-Hsiung;Leu, Ing-Chi;
10:12:38 Porous ZnO/ZnCo2O4 hollow spheres: synthesis, characterization, and applications in gas sensing
DOI:10.1039/c4ta04386c JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:9 AU: Zhou, Xin;Feng, Wei;Wang, Chen;Hu, Xiaolong;Li, Xiaowei;Sun, Peng;Shimanoe, Kengo;Yamazoe, Noboru;Lu, Geyu;
10:12:39 Bi-functional mechanism of H2S detection using CuO-SnO2 nanowires
DOI:10.1039/c3tc30987h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:13 AU: Sun, Gun-Joo;Choi, Sun-Woo;Katoch, Akash;Wu, Ping;Kim, Sang Sub;
10:12:40 NO2-sensing performance of SnO2 microrods by functionalization of Ag nanoparticles
DOI:10.1039/c3tc00602f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:14 AU: Choi, Sun-Woo;Katoch, Akash;Sun, Gun-Joo;Wu, Ping;Kim, Sang Sub;
10:12:41 Transformation of ZnO Nanobelts into Single-Crystalline Mn3O4 Nanowires
DOI:10.1021/am301670x JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:20 AU: Na, Chan Woong;Park, Seung-Young;Chung, Jae-Ho;Lee, Jong-Heun;
10:12:42 Dependence of morphologies for SnO2 nanostructures on their sensing property
DOI:10.1016/j.apsusc.2010.11.013 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Yu Lingmin;Fan Xinhui;Qi Lijun;Ma Lihe;Yan Wen;
10:12:43 Highly sensitive humidity sensor based on amorphous Al2O3 nanotubes
DOI:10.1039/c0jm02753g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:27 AU: Cheng, Baochang;Tian, Baixiang;Xie, Cuicui;Xiao, Yanhe;Lei, Shuijin;
10:12:44 Selective, sensitive, and reversible detection of H2S using Mo-doped ZnO nanowire network sensors
DOI:10.1039/c4ta00387j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:12 AU: Woo, Hyung-Sik;Kwak, Chang-Hoon;Kim, Il-Doo;Lee, Jong-Heun;
10:12:45 Fabrication of Ga2O3/SnO2 core-shell nanowires and their ethanol gas sensing properties
DOI:10.1557/jmr.2011.189 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:9 AU: Jang, Yun-Guk;Kim, Won-Sik;Kim, Dai-Hong;Hong, Seong-Hyeon;
10:12:46 Mechanism and prominent enhancement of sensing ability to reducing gases in p/n core-shell nanofiber
DOI:10.1088/0957-4484/25/17/175501 JN:NANOTECHNOLOGY PY:2014
TC:12 AU: Katoch, Akash;Choi, Sun-Woo;Sun, Gun-Joo;Kim, Hyoun Woo;Kim, Sang Sub;
10:12:47 Dual Functional Sensing Mechanism in SnO2-ZnO Core-Shell Nanowires
DOI:10.1021/am501107c JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Choi, Sun-Woo;Katoch, Akash;Sun, Gun-Joo;Kim, Jae-Hun;Kim, Soo-Hyun;Kim, Sang Sub;
10:12:48 One-step fabrication of beta-Ga2O3-amorphous-SnO2 core-shell microribbons and their thermally switchable humidity sensing properties
DOI:10.1039/c2jm32230g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:13 AU: Liu, Kewei;Sakurai, Makoto;Aono, Masakazu;
10:12:49 Combustion synthesis of porous Pt-functionalized SnO2 sheets for isopropanol gas detection with a significant enhancement in response
DOI:10.1039/c4ta04251d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:5 AU: Dong, Chengjun;Liu, Xu;Xiao, Xuechun;Chen, Gang;Wang, Yude;Djerdj, Igor;
10:12:50 Significant enhancement of the sensing characteristics of In2O3 nanowires by functionalization with Pt nanoparticles
DOI:10.1088/0957-4484/21/41/415502 JN:NANOTECHNOLOGY PY:2010
TC:34 AU: Kim, Sang Sub;Park, Jae Young;Choi, Sun-Woo;Kim, Hyo Sung;Na, Han Gil;Yang, Ju Chan;Kim, Hyoun Woo;
10:12:51 Role of the Interfaces in Multiple Networked One-Dimensional Core Shell Nanostructured Gas Sensors
DOI:10.1021/am501975v JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:24 AU: Park, Sunghoon;Ko, Hyunsung;Kim, Soohyun;Lee, Chongmu;
10:12:52 An alternative method to modify the sensitivity of p-type NiFe2O4 gas sensor
DOI:10.1007/s10853-011-6115-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:12 AU: Sutka, A.;Stingaciu, M.;Mezinskis, G.;Lusis, A.;
10:12:53 Formation of networked ZnO nanowires by vapor phase growth and their sensing properties with respect to CO
DOI:10.1016/j.matlet.2011.05.098 JN:MATERIALS LETTERS PY:2011
TC:14 AU: Park, Jae Young;Park, Yong Kuk;Kim, Sang Sub;
10:12:54 Preparation of NiO nanoparticles in microemulsion and its gas sensing performance
DOI:10.1016/j.matlet.2011.10.039 JN:MATERIALS LETTERS PY:2012
TC:26 AU: Du, Yu;Wang, Weinan;Li, Xiaowei;Zhao, Jing;Ma, Jinming;Liu, Yinping;Lu, Geyu;
10:12:55 Synthesis and characterization of SnO2 hollow nanofibers by electrospinning for ethanol sensing properties
DOI:10.1016/j.matlet.2014.05.151 JN:MATERIALS LETTERS PY:2014
TC:8 AU: Cheng, L.;Ma, S. Y.;Wang, T. T.;Li, X. B.;Luo, J.;Li, W. Q.;Mao, Y. Z.;Gz, D. J.;
10:12:56 Pt/ZnO nanoarray nanogenerator as self-powered active gas sensor with linear ethanol sensing at room temperature
DOI:10.1088/0957-4484/25/11/115502 JN:NANOTECHNOLOGY PY:2014
TC:15 AU: Zhao, Yayu;Lai, Xuan;Deng, Ping;Nie, Yuxin;Zhang, Yan;Xing, Lili;Xue, Xinyu;
10:12:57 Room-Temperature Humidity-Sensing Performance of SiC Nanopaper
DOI:10.1021/am5067496 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Li, Gong-yi;Ma, Jun;Peng, Gang;Chen, Wei;Chu, Zeng-yong;Li, Yi-he;Hu, Tian-jiao;Li, Xiao-dong;
10:12:58 Tailoring the Number of Junctions per Electrode Pair in Networked ZnO Nanowire Sensors
DOI:10.1111/j.1551-2916.2011.04597.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:5 AU: Park, Jae Young;Choi, Sun-Woo;Kim, Sang Sub;
10:12:59 Phase evolution of perovskite LaNiO3 nanofibers for supercapacitor application and p-type gas sensing properties of LaOCl-NiO composite nanofibers
DOI:10.1039/c0jm02256j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:20 AU: Hwang, Do Kyung;Kim, Soohyun;Lee, Jong-Heun;Hwang, In-Sung;Kim, Il-Doo;
10:12:60 Platinum nanoparticle-functionalized tin dioxide nanowires via radiolysis and their sensing capability
DOI:10.1557/jmr.2012.148 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:6 AU: Choi, Sun-Woo;Kim, Sang Sub;
10:12:61 Nanowires improved charge separation and light utilization in metal-oxide solar cells
DOI:10.1063/1.3622309 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Cheng, Wei-Yun;Lin, Yi-Feng;Lu, Shih-Yuan;
10:12:62 Enhanced Gas Sensing Performance of Electrospun Pt-Functionalized NiO Nanotubes with Chemical and Electronic Sensitization
DOI:10.1021/am4017347 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:21 AU: Fu, Jiecai;Zhao, Changhui;Zhang, Junli;Peng, Yong;Xie, Erqing;
10:12:63 Humidity sensing properties of morphology-controlled ordered silicon nanopillar
DOI:10.1016/j.apsusc.2014.08.136 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Li, Wei;Hu, Mingyue;Ge, Pengpeng;Wang, Jing;Guo, YanYan;
10:12:64 Oxygen-sensing property of sol-gel-derived SrTi1-xFexO3-delta thin films with different iron concentrations (x=0.2-0.8)
DOI:10.1016/j.tsf.2013.06.078 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Chow, Chee Lap;Ang, Wan Chia;Tse, Man Siu;Tan, Ooi Kiang;
10:12:65 Resolving Bulk and Grain Boundary Transport Properties of TiO2 Thin Films Enabled by Laser-Induced Anisotropic Morphology
DOI:10.1002/adma.201100917 JN:ADVANCED MATERIALS PY:2011
TC:2 AU: Ankonina, Guy;Chung, Ui-Jin;Chitu, Adrian M.;Komem, Yigal;Rothschild, Avner;
10:12:66 Hydrothermal Microemulsion Synthesis of Oxidatively Stable Cobalt Nanocrystals Encapsulated in Surfactant/Polymer Complex Shells
DOI:10.1021/la9045918 JN:LANGMUIR PY:2010
TC:12 AU: Zhang, Xian-Hua;Ho, Kin Man;Wu, Ai-Hua;Wong, Kin Hung;Li, Pei;
10:13:1 Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes
DOI:10.1002/adma.201000611 JN:ADVANCED MATERIALS PY:2010
TC:165 AU: Lupan, Oleg;Pauporte, Thierry;Viana, Bruno;
10:13:2 Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes
DOI:10.1002/adma.201002134 JN:ADVANCED MATERIALS PY:2010
TC:109 AU: Xu, Sheng;Xu, Chen;Liu, Ying;Hu, Youfan;Yang, Rusen;Yang, Qing;Ryou, Jae-Hyun;Kim, Hee Jin;Lochner, Zachary;Choi, Suk;Dupuis, Russell;Wang, Zhong Lin;
10:13:3 Wavelength-Emission Tuning of ZnO Nanowire-Based Light-Emitting Diodes by Cu Doping: Experimental and Computational Insights
DOI:10.1002/adfm.201100258 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:85 AU: Lupan, Oleg;Pauporte, Thierry;Le Bahers, Tangui;Viana, Bruno;Ciofini, Ilaria;
10:13:4 Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes
DOI:10.1002/adma.201000985 JN:ADVANCED MATERIALS PY:2010
TC:40 AU: Bie, Ya-Qing;Liao, Zhi-Min;Wang, Peng-Wei;Zhou, Yong-Bo;Han, Xiao-Bing;Ye, Yu;Zhao, Qing;Wu, Xiao-Song;Dai, Lun;Xu, Jun;Sang, Li-Wen;Deng, Jun-Jing;Laurent, K.;Leprince-Wang, Y.;Yu, Da-Peng;
10:13:5 Epitaxial Electrodeposition of ZnO Nanowire Arrays on p-GaN for Efficient UV-Light-Emitting Diode Fabrication
DOI:10.1021/am100334c JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:74 AU: Lupan, O.;Pauporte, T.;Viana, B.;Tiginyanu, I. M.;Ursaki, V. V.;Cortes, R.;
10:13:6 Polymer-Templated Hydrothermal Growth of Vertically Aligned Single-Crystal ZnO Nanorods and Morphological Transformations Using Structural Polarity
DOI:10.1002/adfm.201000613 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:65 AU: Kim, Ki Seok;Jeong, Hyun;Jeong, Mun Seok;Jung, Gun Young;
10:13:7 Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer
DOI:10.1063/1.4753926 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Zhang, S. G.;Zhang, X. W.;Si, F. T.;Dong, J. J.;Wang, J. X.;Liu, X.;Yin, Z. G.;Gao, H. L.;
10:13:8 Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
DOI:10.1063/1.4706259 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Dong, J. J.;Zhang, X. W.;Yin, Z. G.;Wang, J. X.;Zhang, S. G.;Si, F. T.;Gao, H. L.;Liu, X.;
10:13:9 Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)(2)-PVA nanocomposites as seed layer
DOI:10.1016/j.optmat.2012.12.006 JN:OPTICAL MATERIALS PY:2013
TC:10 AU: Hassan, J. J.;Mahdi, M. A.;Yusof, Y.;Abu-Hassan, H.;Hassan, Z.;Al-Attar, H. A.;Monkman, A. P.;
10:13:10 Enhancement of Light Extraction Through the Wave-Guiding Effect of ZnO Sub-microrods in InGaN Blue Light-Emitting Diodes
DOI:10.1002/adfm.200901935 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:51 AU: Kim, Ki Seok;Kim, Sang-Mook;Jeong, Hyun;Jeong, Mun Seok;Jung, Gun Young;
10:13:11 Ultraviolet Electroluminescence of Light-Emitting Diodes Based on Single n-ZnO/p-AlGaN Heterojunction Nanowires
DOI:10.1021/nl401941g JN:NANO LETTERS PY:2013
TC:15 AU: Tang, Xiaobing;Li, Gaomin;Zhou, Shaomin;
10:13:12 Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes
DOI:10.1063/1.3430039 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: You, J. B.;Zhang, X. W.;Zhang, S. G.;Wang, J. X.;Yin, Z. G.;Tan, H. R.;Zhang, W. J.;Chu, P. K.;Cui, B.;Wowchak, A. M.;Dabiran, A. M.;Chow, P. P.;
10:13:13 Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes
DOI:10.1063/1.4809582 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Li, Xin;Qi, Junjie;Zhang, Qi;Wang, Qi;Yi, Fang;Wang, Zengze;Zhang, Yue;
10:13:14 Effect of oxygen-related surface adsorption on the efficiency and stability of ZnO nanorod array ultraviolet light-emitting diodes
DOI:10.1063/1.4717714 JN:APPLIED PHYSICS LETTERS PY:2012
TC:21 AU: Liu, W. Z.;Xu, H. Y.;Ma, J. G.;Liu, C. Y.;Liu, Y. X.;Liu, Y. C.;
10:13:15 ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis
DOI:10.1063/1.4764061 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Jha, Shrawan Kumar;Luan, Chunyan;To, Chap Hang;Kutsay, Oleksandr;Kovac, Jaroslav, Jr.;Zapien, Juan Antonio;Bello, Igor;Lee, Shuit-Tong;
10:13:16 Controllable Growth of Highly Ordered ZnO Nanorod Arrays via Inverted Self-Assembled Monolayer Template
DOI:10.1021/am2010288 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:26 AU: Dong, J. J.;Zhang, X. W.;Yin, Z. G.;Zhang, S. G.;Wang, J. X.;Tan, H. R.;Gao, Y.;Si, F. T.;Gao, H. L.;
10:13:17 Comparative study of the ZnO and Zn1-xCdxO nanorod emitters hydrothermally synthesized and electrodeposited on p-GaN
DOI:10.1016/j.apsusc.2012.07.058 JN:APPLIED SURFACE SCIENCE PY:2012
TC:14 AU: Lupan, O.;Pauporte, T.;Chow, L.;Chai, G.;Viana, B.;Ursaki, V. V.;Monaico, E.;Tiginyanu, I. M.;
10:13:18 Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping
DOI:10.1063/1.4902526 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Echresh, Ahmad;Chey, Chan Oeurn;Shoushtari, Morteza Zargar;Nur, Omer;Willander, Magnus;
10:13:19 GaN/MgO/ZnO heterojunction light-emitting diodes
DOI:10.1016/j.tsf.2012.12.027 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Chen, Xinyi;Ng, Alan M. C.;Djurisic, Aleksandra B.;Chan, Wai Kin;Fong, P. W. K.;Lui, H. F.;Surya, C.;Cheng, C. C. W.;Kwok, W. M.;
10:13:20 ZnO UV photodetector with controllable quality factor and photosensitivity
DOI:10.1063/1.4790633 JN:AIP ADVANCES PY:2013
TC:8 AU: Campos, L. C.;Guimaraes, M. H. D.;Goncalves, A. M. B.;de Oliveira, S.;Lacerda, R. G.;
10:13:21 ZnO light-emitting devices with a lifetime of 6.8 hours
DOI:10.1063/1.4733298 JN:APPLIED PHYSICS LETTERS PY:2012
TC:28 AU: Liu, J. S.;Shan, C. X.;Shen, H.;Li, B. H.;Zhang, Z. Z.;Liu, L.;Zhang, L. G.;Shen, D. Z.;
10:13:22 Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability
DOI:10.1088/0957-4484/22/24/245202 JN:NANOTECHNOLOGY PY:2011
TC:27 AU: Jha, Shrawan;Qian, Jin-Cheng;Kutsay, Oleksandr;Kovac, Jaroslav, Jr.;Luan, Chun-Yan;Zapien, Juan Antonio;Zhang, Wenjun;Lee, Shuit-Tong;Bello, Igor;
10:13:23 White light emission from CdTe quantum dots decorated n-ZnO nanorods/p-GaN light-emitting diodes
DOI:10.1063/1.3625948 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Dai, J.;Ji, Y.;Xu, C. X.;Sun, X. W.;Leck, K. S.;Ju, Z. G.;
10:13:24 Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes
DOI:10.1063/1.3587576 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: Ye, Jing;Zhao, Yu;Tang, Libin;Chen, Li-Miao;Luk, C. M.;Yu, S. F.;Lee, S. T.;Lau, S. P.;
10:13:25 Highly luminescent columnar ZnO films grown directly on n-Si and p-Si substrates by low-temperature electrochemical deposition
DOI:10.1016/j.optmat.2011.01.024 JN:OPTICAL MATERIALS PY:2011
TC:15 AU: Lupan, Oleg;Pauporte, Thierry;Ursaki, V. V.;Tiginyanu, I. M.;
10:13:26 Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode
DOI:10.1063/1.3672051 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Huang, Huihui;Fang, Guojia;Li, Songzhan;Long, Hao;Mo, Xiaoming;Wang, Haoning;Li, Yuan;Jiang, Qike;Carroll, David L.;Wang, Jianbo;Wang, Mingjun;Zhao, Xingzhong;
10:13:27 Ultraviolet electroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array
DOI:10.1063/1.4739002 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Zhu, G. Y.;Xu, C. X.;Lin, Y.;Shi, Z. L.;Li, J. T.;Ding, T.;Tian, Z. S.;Chen, G. F.;
10:13:28 Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes
DOI:10.1063/1.4724212 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Huang, Huihui;Fang, Guojia;Li, Yuan;Li, Songzhan;Mo, Xiaoming;Long, Hao;Wang, Haoning;Carroll, David L.;Zhao, Xingzhong;
10:13:29 Zn2GeO4 Nanowires As Efficient Electron Injection Material for Electroluminescent Devices
DOI:10.1021/am401234a JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:3 AU: Wang, Jiangxin;Yan, Chaoyi;Magdassi, Shlomo;Lee, Pooi See;
10:13:30 Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer
DOI:10.1063/1.3590399 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Zhang, S. G.;Zhang, X. W.;Yin, Z. G.;Wang, J. X.;Dong, J. J.;Wang, Z. G.;Qu, S.;Cui, B.;Wowchak, A. M.;Dabiran, A. M.;Chow, P. P.;
10:13:31 Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes
DOI:10.1063/1.3490652 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Lee, Hsin-Ying;Lee, Ching-Ting;Yan, Jheng-Tai;
10:13:32 Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes
DOI:10.1063/1.4740081 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Du, Guo-Tong.;Zhao, Wang;Wu, Guo-Guang;Shi, Zhi-Feng;Xia, Xiao-Chuan;Liu, Yang;Liang, Hong-Wei;Dong, Xin;Ma, Yan;Zhang, Bao-Lin;
10:13:33 Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN
DOI:10.1063/1.4819847 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Baik, Kwang Hyeon;Kim, Hyonwoong;Kim, Jihyun;Jung, Sukkoo;Jang, Soohwan;
10:13:34 Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction
DOI:10.1063/1.4870517 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Shi, Zhifeng;Zhang, Yuantao;Cui, Xijun;Wu, Bin;Zhuang, Shiwei;Yang, Fan;Yang, Xiaotian;Zhang, Baolin;Du, Guotong;
10:13:35 ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
DOI:10.1063/1.3653835 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Chen, Xinyi;Ng, Alan Man Ching;Fang, Fang;Ng, Yip Hang;Djurisic, Aleksandra B.;Tam, Hoi Lam;Cheah, Kok Wai;Gwo, Shangjr;Chan, Wai Kin;Fong, Patrick Wai Keung;Lui, Hsian Fei;Surya, Charles;
10:13:36 Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film
DOI:10.1016/j.tsf.2014.08.009 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Baik, Kwang Hyeon;Kim, Hyonwoong;Jang, Soohwan;
10:13:37 Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition
DOI:10.1063/1.4842635 JN:AIP ADVANCES PY:2013
TC:6 AU: Koc, P.;Tekmen, S.;Baltakesmez, A.;Tuzemen, S.;Meral, K.;Onganer, Y.;
10:13:38 Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes
DOI:10.1063/1.4821346 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Long, Hao;Li, Songzhan;Mo, Xiaoming;Wang, Haoning;Huang, Huihui;Chen, Zhao;Liu, Yuping;Fang, Guojia;
10:13:39 Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer
DOI:10.1063/1.4801761 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Wang, T.;Wu, H.;Zheng, H.;Wang, J. B.;Wang, Z.;Chen, C.;Xu, Y.;Liu, C.;
10:13:40 The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction
DOI:10.1063/1.3505929 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Guo, Zhen;Zhang, Hong;Zhao, Dongxu;Liu, Yichun;Yao, Bin;Li, Binghui;Zhang, Zhenzhong;Shen, Dezhen;
10:13:41 Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer
DOI:10.1063/1.4760271 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Wang, T.;Wu, H.;Wang, Z.;Chen, C.;Liu, C.;
10:13:42 High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction
DOI:10.1063/1.4813538 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Shi, Zhifeng;Zhang, Yuantao;Zhang, Jinxiang;Wang, Hui;Wu, Bin;Cai, Xupu;Cui, Xijun;Dong, Xin;Liang, Hongwei;Zhang, Baolin;Du, Guotong;
10:13:43 Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(1 1 1): Effects of thermal annealing
DOI:10.1016/j.mseb.2011.07.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:9 AU: Lupan, O.;Pauporte, Th;Tiginyanu, I. M.;Ursaki, V. V.;Heinrich, H.;Chow, L.;
10:13:44 Arrays of ZnO nanocolumns for 3-dimensional very thin amorphous and microcrystalline silicon solar cells
DOI:10.1016/j.tsf.2013.02.110 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Neykova, Neda;Hruska, Karel;Holovsky, Jakub;Remes, Zdenek;Vanecek, Milan;
10:13:45 Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes
DOI:10.1063/1.3694025 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Shi, Zhifeng;Xia, Xiaochuan;Yin, Wei;Zhang, Shikai;Wang, Hui;Wang, Jin;Zhao, Long;Dong, Xin;Zhang, Baolin;Du, Guotong;
10:13:46 Nanointerlayer Induced Electroluminescence Transition from Ultraviolet- to Red-Dominant Mode for n-Mn:ZnO/N-GaN Heterojunction
DOI:10.1021/am300223y JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:6 AU: Zhou, Hai;Fang, Guojia;Jiang, Qike;Zhu, Yongdan;Liu, Nishuang;Zou, Xiao;Mo, Xiaoming;Liu, Yihe;Wang, Jianbo;Meng, Xianquan;Zhao, Xingzhong;
10:13:47 Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure
DOI:10.1063/1.4802806 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Shi, Zhifeng;Zhang, Yuantao;Wu, Bin;Cai, Xupu;Zhang, Jinxiang;Xia, Xiaochuan;Wang, Hui;Dong, Xin;Liang, Hongwei;Zhang, Baolin;Du, Guotong;
10:13:48 High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films
DOI:10.1063/1.4901273 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Qian, J. C.;Jha, S. K.;Wang, B. Q.;Jelenkovic, E. V.;Bello, I.;Klemberg-Sapieha, J. E.;Martinu, L.;Zhang, W. J.;
10:13:49 The growth and photocatalytic property of ZnO nanofibers synthesized by atom layer deposition using PVP nanofibers as templates
DOI:10.1016/j.apsusc.2012.08.048 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Fang, Xuan;Li, Shuang;Wang, Xiaohua;Fang, Fang;Chu, Xueying;Wei, Zhipeng;Li, Jinhua;Chen, Xinying;Wang, Fei;
10:13:50 Secondary ion mass spectrometry and photoluminescence study on microstructural characteristics of chemically synthesized ZnO nanowalls
DOI:10.1016/j.apsusc.2014.02.154 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Bayan, Sayan;Chakraborty, Purushottam;
10:13:51 Blue/green electroluminescence from a ZnO nanorods/p-GaN heteroj unction light emitting diode under different reverse bias
DOI:10.1016/j.apsusc.2013.12.139 JN:APPLIED SURFACE SCIENCE PY:2014
TC:9 AU: Fu, Qiu-Ming;Cao, Wei;Li, Guo-Wei;Lin, Zhi-Dong;Chen, Zhe;Xu, Chuan-Bo;Tu, Ya-Fang;Ma, Zhi-Bin;
10:13:52 Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage
DOI:10.1063/1.3431287 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Li, Songzhan;Fang, Guojia;Long, Hao;Mo, Xiaoming;Huang, Huihui;Dong, Binzhong;Zhao, Xingzhong;
10:13:53 Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays
DOI:10.1007/s11664-012-1919-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Jha, S.;Wang, C. D.;Luan, C. Y.;Liu, C. P.;Bin, H.;Kutsay, O.;Bello, I.;Zapien, J. A.;Zhang, W. J.;Lee, S. T.;
10:13:54 Simulation of an Improved Design for n-Electrode with Holes for Thin-GaN Light-Emitting Diodes
DOI:10.1155/2013/805361 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Hwu, Farn-Shiun;
10:13:55 Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method
DOI:10.1155/2014/756401 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Yao, Yu-Feng;Shen, Chen-Hung;Chen, Wei-Fang;Shih, Pei-Ying;Chou, Wang-Hsien;Su, Chia-Ying;Chen, Horng-Shyang;Liao, Che-Hao;Chang, Wen-Ming;Kiang, Yean-Woei;Yang, C. C.;
10:13:56 Seedless synthesis of layered ZnO nanowall networks on Al substrate for white light electroluminescence
DOI:10.1088/0957-4484/24/31/315203 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Huang, Huihui;Wang, Haoning;Li, Borui;Mo, Xiaoming;Long, Hao;Li, Yuan;Zhang, Han;Carroll, David L.;Fang, Guojia;
10:13:57 Size-controlled growth of ZnO nanowires by catalyst-free high-pressure pulsed laser deposition and their optical properties
DOI:10.1063/1.3605717 JN:AIP ADVANCES PY:2011
TC:8 AU: Liu, W. Z.;Xu, H. Y.;Wang, L.;Li, X. H.;Liu, Y. C.;
10:13:58 Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
DOI:10.1063/1.4874455 JN:APL MATERIALS PY:2014
TC:10 AU: Lee, Ya-Ju;Yang, Zu-Po;Lo, Fang-Yuh;Siao, Jhih-Jhong;Xie, Zhong-Han;Chuang, Yi-Lun;Lin, Tai-Yuan;Sheu, Jinn-Kong;
10:13:59 Two-Dimensional ZnO Nanowalls for Gas Sensor and Photoelectrochemical Applications
DOI:10.1007/s13391-014-3272-x JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Chang, Sheng-Po;Wen, Chen-Hua;Chang, Shoou-Jinn;
10:13:60 The influence of ZnO seed layers on n-ZnO nanostructure/p-GaN LEDs
DOI:10.1007/s00339-012-7060-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Wu, Jia-Hong;Liu, Shu-Yi;Li, Shuti;Jiang, Yu-long;Ru, Guo-Ping;Qu, Xin-Ping;
10:13:61 ZnO hedgehog-like structures for control cell cultivation
DOI:10.1016/j.apsusc.2011.11.101 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Neykova, Neda;Broz, Antonin;Remes, Zdenek;Hruska, Karel;Kalbacova, Marie;Kromka, Alexander;Vanecek, Milan;
10:13:62 Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides
DOI:10.1007/s11664-012-2242-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:0 AU: Liu, Yuanda;Liang, Hongwei;Xia, Xiaochuan;Bian, Jiming;Shen, Rensheng;Liu, Yang;Luo, Yingmin;Du, Guotong;
10:13:63 Fabrication, structure and luminescence properties of Al2O3/ZnO coaxial nanowires
DOI:10.1016/j.optmat.2013.03.023 JN:OPTICAL MATERIALS PY:2013
TC:0 AU: Kim, Hyunsu;Park, Sunghoon;An, Soyeon;Lee, Chongmu;
10:13:64 Effect of the radio-frequency power on the dielectric properties of hydrogen-containing boron carbon nitride films deposited by plasma-assisted chemical vapor deposition using tris(dimethylamino)boron gas
DOI:10.1016/j.tsf.2009.06.025 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Aoki, Hidemitsu;Masuzumi, Takuro;Hara, Makoto;Watanabe, Daisuke;Kimura, Chiharu;Sugino, Takashi;
10:14:1:1 Analysis of current-voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode
DOI:10.1016/j.jallcom.2011.01.068 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:20 AU: Yahia, I. S.;Fadel, M.;Sakr, G. B.;Yakuphanoglu, F.;Shenouda, S. S.;Farooq, W. A.;
10:14:1:2 Influence of temperature and illumination on the characteristics of nanocrystalline Ga-0.29 Al0.71As based heterojunction prepared by MOCVD
DOI:10.1016/j.jallcom.2011.05.020 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Farag, A. A. M.;
10:14:1:3 On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures
DOI:10.1016/j.jallcom.2011.02.033 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:20 AU: Uslu, Habibe;Altindal, Semsettin;Polat, Ismail;Bayrak, Hatice;Bacaksiz, Emin;
10:14:1:4 Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy
DOI:10.1016/j.jallcom.2010.01.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:32 AU: Farag, A. A. M.;Ashery, A.;Ahmed, E. M. A.;Salem, M. A.;
10:14:1:5 Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)
DOI:10.1016/j.jallcom.2010.11.150 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Bengi, A.;Uslu, H.;Asar, T.;Altindal, S.;Cetin, S. S.;Mammadov, T. S.;Ozcelik, S.;
10:14:1:6 Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers
DOI:10.1016/j.jallcom.2010.07.152 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Uslu, H.;Bengi, A.;Cetin, S. S.;Aydemir, U.;Altindal, S.;Aghaliyeva, S. T.;Ozcelik, S.;
10:14:1:7 The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes
DOI:10.1016/j.jallcom.2010.04.210 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Uslu, H.;Altindal, S.;Aydemir, U.;Dokme, I.;Afandiyeva, I. M.;
10:14:1:8 A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer
DOI:10.1016/j.jallcom.2010.06.095 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:21 AU: Bengi, A.;Aydemir, U.;Altindal, S.;Ozen, Y.;Ozcelik, S.;
10:14:1:9 Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode
DOI:10.1016/j.jallcom.2012.07.001 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Tascioglu, Ilke;Soylu, Murat;Altindal, Semsettin;Al-Ghamdi, A. A.;Yakuphanoglu, Fahrettin;
10:14:1:10 Structural and electrical characteristics of n-InSb/p-GaAs heterojunction prepared by liquid phase epitaxy
DOI:10.1016/j.jallcom.2014.06.058 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Farag, A. A. M.;Terra, F. S.;Ashery, A.;Mansour, A. M.;
10:14:1:11 The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
DOI:10.1016/j.jallcom.2009.11.128 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:17 AU: Kavasoglu, A. Sertap;Yakuphanoglu, Fahrettin;Kavasoglu, Nese;Pakma, Osman;Birgi, Ozcan;Oktik, Sener;
10:14:1:12 Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics
DOI:10.1016/j.jallcom.2011.09.101 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Vural, Ozkan;Safak, Yasemin;Turut, Abdulmecit;Altindal, Semsettin;
10:14:1:13 The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy
DOI:10.1016/j.jallcom.2012.01.154 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Oylumluoglu, Gorkem;Kavasoglu, A. Sertap;Kavasoglu, Nese;
10:14:1:14 The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics
DOI:10.1016/j.mssp.2012.04.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:8 AU: Kinaci, Baris;Cetin, S. Sebnem;Bengi, Aylin;Ozcelik, Suleyman;
10:14:1:15 Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model
DOI:10.1016/j.jallcom.2010.07.019 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Soylu, Murat;Yakuphanoglu, Fahrettin;
10:14:1:16 Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier
DOI:10.1016/j.jallcom.2012.11.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Afandiyeva, I. M.;Demirezen, S.;Altindal, S.;
10:14:1:17 Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/n-Si Structures
DOI:10.1007/s11664-013-2524-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Kinaci, Baris;Ozcelik, Suleyman;
10:14:1:18 Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)
DOI:10.1016/j.jallcom.2011.09.053 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Chawanda, A.;Coelho, S. M. M.;Auret, F. D.;Mtangi, W.;Nyamhere, C.;Nel, J. M.;Diale, M.;
10:14:1:19 Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures
DOI:10.1016/j.jnoncrysol.2010.01.024 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:25 AU: Arslan, Engin;Safak, Yasemin;Altindal, Semsettin;Kelekci, Oezguer;Ozbay, Ekmel;
10:14:1:20 I-V Characteristics of PtxCo1-x (x=0.2, 0.5, and 0.7) Thin Films
DOI:10.1155/2013/579131 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Erkovan, M.;Senturk, E.;Sahin, Y.;Okutan, M.;
10:14:1:21 Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications
DOI:10.1016/j.jallcom.2010.04.235 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Sakr, G. B.;Yahia, I. S.;
10:14:1:22 Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
DOI:10.1063/1.4893970 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Alialy, S.;Altindal, S.;Tanrikulu, E. E.;Yildiz, D. E.;
10:14:1:23 Characterization of Al/p-Si/n-AgGaSe2/Au thin films heterojunction device
DOI:10.1016/j.matchemphys.2013.01.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Sakr, G. B.;
10:14:1:24 Structural and electrical characterization of ZnO-based homojunctions
DOI:10.1016/j.jallcom.2010.02.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Bacaksiz, E.;Cankaya, G.;Polat, I.;Yilmaz, S.;Duran, C.;Altunbas, M.;
10:14:1:25 Temperature dependent of the current-voltage (I-V) characteristics of TaSi2/n-Si structure
DOI:10.1016/j.mssp.2013.07.036 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:0 AU: Abu-Samaha, F. S.;Darwish, A. A. A.;Mansour, A. N.;
10:14:1:26 Vertical transport through GaAs/InGaP multi-quantum-wells p-i-n diode with evidence of tunneling effects
DOI:10.1063/1.3662116 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Gombia, Enos;Parisini, Antonella;Ghezzi, Carlo;Tarricone, Luciano;Baldini, Michele;Vantaggio, Salvatore;
10:14:1:27 Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
DOI:10.1063/1.3684989 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Gullu, O.;Pakma, O.;Turut, A.;
10:14:1:28 Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO2/p-Si metal-insulator-semiconductor structure
DOI:10.1063/1.4848101 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Panda, J.;Chattopadhyay, S.;Nath, T. K.;
10:14:1:29 Growth and current-voltage characterization of ZnTe/CdTe heterojunctions
DOI:10.1016/j.tsf.2010.08.112 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Sweyllam, A.;Alfaramawi, K.;Abboudy, S.;Imam, N. G.;Motaweh, H. A.;
10:14:1:30 Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy
DOI:10.1016/j.tsf.2009.10.081 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Tanaka, T.;Tanaka, M.;Itakura, M.;Sadoh, T.;Miyao, M.;
10:14:2:1 Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers
DOI:10.1016/j.jallcom.2010.05.074 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:31 AU: Janardhanam, V.;Lee, Hoon-Ki;Shim, Kyu-Hwan;Hong, Hyo-Bong;Lee, Soo-Hyung;Ahn, Kwang-Soon;Choi, Chel-Jong;
10:14:2:2 Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature
DOI:10.1016/j.jallcom.2014.02.177 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Benamara, Mekki;Anani, Macho;Akkal, Boudali;Benamara, Zineb;
10:14:2:3 Carrier transport mechanism of Se/n-type Si Schottky diodes
DOI:10.1016/j.jallcom.2012.04.031 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:11 AU: Janardhanam, V.;Park, Yang-Kyu;Ahn, Kwang-Soon;Choi, Chel-Jong;
10:14:2:4 I-V-T (current-voltage-temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device
DOI:10.1016/j.jallcom.2013.09.006 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Caldiran, Z.;Deniz, A. R.;Coskun, F. Mehmet;Aydogan, S.;Yesildag, A.;Ekinci, D.;
10:14:2:5 Electrical properties of Pt/n-type Ge Schottky contact with PEDOT: PSS interlayer
DOI:10.1016/j.jallcom.2012.09.085 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Kumar, A. Ashok;Reddy, V. Rajagopal;Janardhanam, V.;Yang, Hyun-Deok;Yun, Hyung-Joong;Choi, Chel-Jong;
10:14:2:6 Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate
DOI:10.1016/j.jallcom.2010.12.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Gulen, Y.;Alanyalioglu, M.;Ejderha, K.;Nuhoglu, C.;Turut, A.;
10:14:2:7 Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer
DOI:10.1007/s11664-014-3177-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Reddy, V. Rajagopal;Manjunath, V.;Janardhanam, V.;Kil, Yeon-Ho;Choi, Chel-Jong;
10:14:2:8 Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer
DOI:10.1016/j.jallcom.2014.06.132 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Khurelbaatar, Zagarzusem;Kil, Yeon-Ho;Yun, Hyung-Joong;Shim, Kyu-Hwan;Nam, Jung Tae;Kim, Keun-Soo;Lee, Sang-Kwon;Choi, Chel-Jong;
10:14:2:9 Temperature-dependent current-voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator
DOI:10.1016/j.jallcom.2012.12.143 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:10 AU: Jyothi, I.;Seo, Min-Woo;Janardhanam, V.;Shim, Kyu-Hwan;Lee, Young-Boo;Ahn, Kwang-Soon;Choi, Chel-Jong;
10:14:2:10 Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts
DOI:10.1016/j.mssp.2010.12.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Ejderha, K.;Zengin, A.;Orak, I.;Tasyurek, B.;Kilinc, T.;Turut, A.;
10:14:2:11 Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si
DOI:10.2320/matertrans.M2013075 JN:MATERIALS TRANSACTIONS PY:2013
TC:1 AU: Janardhanam, V.;Kil, Yeon-Ho;Shim, Kyu-Hwan;Reddy, V. Rajagopal;Choi, Chel-Jong;
10:14:2:12 Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP
DOI:10.2320/matertrans.M2013281 JN:MATERIALS TRANSACTIONS PY:2013
TC:3 AU: Reddy, V. Rajagopal;Rao, L. Dasaradha;Janardhanam, V.;Kang, Min-Sung;Choi, Chel-Jong;
10:14:2:13 Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/n-GaAs diode
DOI:10.1063/1.4904918 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Ejderha, K.;Duman, S.;Nuhoglu, C.;Urhan, F.;Turut, A.;
10:14:2:14 Studies on In-pWSe(2) Schottky diode by current-voltage-temperature method
DOI:10.1016/j.tsf.2010.01.027 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Mathai, Achamma John;Patel, K. D.;Srivastava, R.;
10:14:2:15 Current-voltage-temperature characteristics of Au/p-InP Schottky barrier diode
DOI:10.1016/j.tsf.2013.01.079 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Korucu, Demet;Duman, Songul;
10:14:2:16 Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator
DOI:10.2320/matertrans.M2013015 JN:MATERIALS TRANSACTIONS PY:2013
TC:2 AU: Jyothi, I.;Yang, Hyun-Deok;Shim, Kyu-Hwan;Janardhanam, V.;Kang, Seung-Min;Hong, Hyobong;Choi, Chel-Jong;
10:14:2:17 Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes
DOI:10.1016/j.mseb.2013.11.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:2 AU: Munthali, Kinnock V.;Theron, Chris;Auret, F. Danie;Coelho, Sergio M. M.;Njoroge, Eric;Prinsloo, Linda;
10:14:3:1 Electronic and photovoltaic properties of Au/pyronine G(Y)/p-GaAs/Au:Zn heterojunction
DOI:10.1016/j.jallcom.2012.03.053 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:11 AU: Soliman, H. S.;Farag, A. A. M.;Khosifan, N. M.;Solami, T. S.;
10:14:3:2 Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
DOI:10.1016/j.jallcom.2010.09.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:19 AU: Gullu, O.;Turut, A.;
10:14:3:3 Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer
DOI:10.1080/14786435.2013.765985 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:3 AU: Ocak, Yusuf Selim;Guven, Reyhan Gul;Tombak, Ahmet;Kilicoglu, Tahsin;Guven, Kemal;Dogru, Mehmet;
10:14:3:4 Fabrication and electrical properties of an organic-inorganic device based on Coumarin 30 dye
DOI:10.1016/j.mssp.2014.03.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Tombak, Ahmet;Ocak, Yusuf Selim;Asubay, Sezai;Kilicoglu, Tahsin;Ozkahraman, Fatma;
10:14:3:5 Temperature dependence of electronic parameters of organic Schottky diode based on fluorescein sodium salt
DOI:10.1016/j.synthmet.2011.02.016 JN:SYNTHETIC METALS PY:2011
TC:11 AU: Yahia, I. S.;Farag, A. A. M.;Yakuphanoglu, F.;Farooq, W. A.;
10:14:3:6 Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode
DOI:10.1016/j.mssp.2014.07.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Asubay, Sezai;Genisel, Mustafa Fatih;Ocak, Yusuf Selim;
10:14:3:7 Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode
DOI:10.1016/j.mssp.2013.08.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Elhaji, A.;Evans-Freeman, J. H.;El-Nahass, M. M.;Kappers, M. J.;Humphries, C. J.;
10:14:3:8 Frequency dependent electrical transport properties of 4,4 ',4 ''-tris(N-3-methylphenyl-N-phenylamine)triphenylamine by impedance spectroscopy
DOI:10.1016/j.synthmet.2010.04.022 JN:SYNTHETIC METALS PY:2010
TC:16 AU: Chauhan, Gayatri;Srivastava, Ritu;Tyagi, Priyanka;Kumar, Amit;Srivastava, P. C.;Kamalasanan, M. N.;
10:14:3:9 Modification of electrical properties of Al/p-Si Schottky barrier device based on 2 '-7 '-dichlorofluorescein
DOI:10.1063/1.3647507 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Soylu, Murat;Yahia, I. S.;Yakuphanoglu, Fahrettin;Farooq, W. A.;
10:14:3:10 Effect of annealing on optical properties of 2-chloro-5-(2,5-dimethoxy-benzylidene)-1,3-diethyl-dihydro-pyrimidine-4, 6(1H,5H)-dione thin films
DOI:10.1016/j.mssp.2014.05.022 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Soliman, H. S.;El-Zaidia, E. F. M.;Ali, H. A. M.;Atef, S. M.;
10:14:3:11 An organic-inorganic rectifying contact based on a ZnPc derivative
DOI:10.1016/j.mssp.2014.06.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Ozerden, Enise;Yildiz, Mustafa;Ocak, Yusuf Selim;Tombak, Ahmet;Kilicoglu, Tahsin;
10:14:4:1 Electrical and photovoltaic properties of cobalt doped zinc oxide nanofiber/n-silicon diode
DOI:10.1016/j.jallcom.2010.01.075 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:46 AU: Yakuphanoglu, Fahrettin;
10:14:4:2 ZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate
DOI:10.1016/j.mssp.2010.05.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:41 AU: Yakuphanoglu, Fahrettin;Caglar, Yasemin;Caglar, Mujdat;Ilican, Saliha;
10:14:4:3 p-Si/DNA photoconductive diode for optical sensor applications
DOI:10.1016/j.synthmet.2011.07.016 JN:SYNTHETIC METALS PY:2011
TC:26 AU: Gupta, R. K.;Yakuphanoglu, F.;Hasar, H.;Al-Khedhairy, Abdulaziz A.;
10:14:4:4 Photoresponse and electrical characterization of photodiode based nanofibers ZnO and Si
DOI:10.1016/j.mssp.2011.02.017 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:8 AU: Yakuphanoglu, Fahrettin;Farooq, W. Aslam;
10:14:4:5 Series resistance controlling photosensor of Ag/DNA/p-Si/Al diode
DOI:10.1016/j.synthmet.2012.04.008 JN:SYNTHETIC METALS PY:2012
TC:10 AU: Gupta, R. K.;Al-Ghamdi, A. A.;Al-Hartomi, Omar;Hasar, H.;El-Tantawy, Farid;Yakuphanoglu, F.;
10:14:4:6 High performance organic-on-inorganic hybrid photodiodes based on organic semiconductor-graphene oxide blends
DOI:10.1016/j.synthmet.2014.06.001 JN:SYNTHETIC METALS PY:2014
TC:5 AU: Al-Hartomy, Omar A.;Gupta, R. K.;Al-Ghamdi, Ahmed. A.;Yakuphanoglu, F.;
10:14:4:7 Novel photosensor based on carbon nitride thin films
DOI:10.1016/j.matlet.2014.07.103 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Gupta, R. K.;Al-Ghamdi, Ahmed. A.;El-Tantawy, F.;Farooq, W. A.;Yakuphanoglu, F.;
10:14:4:8 Photoconducting and electrical properties of Al/TIPS-pentacene/p-Si/Al hybrid diode for optical sensor applications
DOI:10.1016/j.synthmet.2011.09.002 JN:SYNTHETIC METALS PY:2011
TC:1 AU: Gupta, R. K.;Aydin, M. E.;Yakuphanoglu, F.;
10:14:4:9 The photo-electrical properties of the p-Si/Fe(II)-polymeric complex/Au diode
DOI:10.1016/j.synthmet.2013.10.002 JN:SYNTHETIC METALS PY:2013
TC:3 AU: Gunduz, Bayram;Turan, Nevin;Kaya, Esin;Colak, Naki;
10:14:4:10 Electrical and optical properties of thin films of DNA:PEDOT
DOI:10.1016/j.optmat.2010.05.014 JN:OPTICAL MATERIALS PY:2010
TC:6 AU: Kazukauskas, V.;Pranaitis, M.;Arlauskas, A.;Krupka, O.;Kajzar, F.;Essaidi, Z.;Sahraoui, B.;
10:14:4:11 Series resistance controlling photosensor of Ag/DNA/p-Si/Al diode (vol 162, pg 981, 2012)
DOI:10.1016/j.synthmet.2012.06.001 JN:SYNTHETIC METALS PY:2012
TC:1 AU: Gupta, R. K.;Al-Ghamdi, A. A.;Al-Hartomy, Omar A.;Hasar, H.;El-Tantawy, Farid;Yakuphanoglu, F.;
10:14:4:12 Formation of nano-crystalline C3N4 thin films on stainless steel from hexamethylenetetramine and urea using simple sol-gel method
DOI:10.1016/j.tsf.2013.07.059 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Uddin, Md. Nizam;Yang, Yong Suk;
10:14:5:1 Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode
DOI:10.1016/j.materresbull.2012.11.013 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Sakr, G. B.;Fouad, S. S.;Yahia, I. S.;Basset, D. M. Abdel;Yakuphanoglu, F.;
10:14:5:2 Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)
DOI:10.1016/j.jallcom.2010.08.021 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Yahia, I. S.;Fadel, M.;Sakr, G. B.;Shenouda, S. S.;
10:14:5:3 Effect of the frequency and temperature on the complex impedance spectroscopy (C-V and G-V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode
DOI:10.1007/s10853-011-5951-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:6 AU: Yahia, I. S.;Fadel, M.;Sakr, G. B.;Shenouda, S. S.;Yakuphanoglu, F.;
10:14:5:4 Memory switching of ZnGa2Te4 thin films
DOI:10.1007/s10853-012-6850-z JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Sakr, G. B.;Fouad, S. S.;Yahia, I. S.;Basset, D. M. Abdel;
10:14:5:5 Structural characterization and novel optical properties of defect chalcopyrite ZnGa2Te4 thin films
DOI:10.1016/j.materresbull.2011.06.002 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:7 AU: Fouad, S. S.;Sakr, G. B.;Yahia, I. S.;Basset, D. M. Abdel;
10:14:5:6 FP-LAPW investigation of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite
DOI:10.1016/j.commatsci.2010.09.030 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:10 AU: Ayeb, Y.;Ouahrani, T.;Khenata, R.;Reshak, Ali H.;Rached, D.;Bouhemadou, A.;Arrar, R.;
10:14:5:7 Capacitance and conductance characterization of nano-ZnGa2Te4/n-Si diode
DOI:10.1016/j.materresbull.2013.08.065 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:9 AU: Fouad, S. S.;Sakr, G. B.;Yahia, I. S.;Abdel-Basset, D. M.;Yakuphanoglu, F.;
10:14:5:8 Negative capacitance of ZnGa2Se4/Si nano-heterojunction diode
DOI:10.1007/s00339-013-7739-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Yahia, I. S.;Sakr, G. B.;Shenouda, S. S.;Fadel, M.;Fouad, S. S.;Yakuphanoglu, F.;
10:14:5:9 Electrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependence
DOI:10.1016/j.jnoncrysol.2009.11.035 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:5 AU: Lokesh, R.;Udayashankar, N. K.;Asokan, S.;
10:14:5:10 Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory
DOI:10.1016/j.tsf.2009.10.033 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Kozyukhin, S. A.;Popov, A. I.;Voronkov, E. N.;
10:14:6:1 Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction
DOI:10.1016/j.jallcom.2010.08.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:17 AU: Chung, G. S.;Kim, K. S.;Yakuphanoglu, F.;
10:14:6:2 Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode
DOI:10.1016/j.jallcom.2011.08.012 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Kim, K. S.;Gupta, R. K.;Chung, G. S.;Yakuphanoglu, F.;
10:14:6:3 Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell structure nanoparticles
DOI:10.1016/j.jallcom.2009.09.109 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:14 AU: Cao, Lianzhen;Jiang, Hong;Song, Hang;Li, Zhiming;Miao, Guoqing;
10:14:6:4 Unusual photocapacitance properties of a mono-crystalline silicon solar cell for optoelectronic applications
DOI:10.1016/j.solmat.2011.05.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:9 AU: Yahia, I. S.;Yakuphanoglu, F.;Azim, Osama A.;
10:14:6:5 Effect of the solid precursors on the formation of nanosized TiBx powders in RF thermal plasma
DOI:10.1016/j.ceramint.2013.08.036 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Klebert, Szilvia;Keszler, Anna Maria;Sajo, Istvan;Drotar, Eszter;Bertoti, Imre;Bodis, Eszter;Fazekas, Peter;Karoly, Zoltan;Szepvoelgyi, Janos;
10:14:6:6 Characterization of the evaporation behavior of a beta-SiC target during electron beam-physical vapor deposition
DOI:10.1016/j.jallcom.2009.10.218 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Yi, Jian;He, XiaoDong;Sun, Yue;
10:14:6:7 Synthesis of SiC powder by RF plasma technique
DOI:10.1016/j.powtec.2011.08.027 JN:POWDER TECHNOLOGY PY:2011
TC:8 AU: Karoly, Z.;Mohai, I.;Klebert, Sz.;Keszler, A.;Sajo, I. E.;Szepvoelgyi, J.;
10:14:6:8 Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets
DOI:10.1016/j.tsf.2009.10.127 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Ikoma, Yoshifumi;Okuyama, Ryousuke;Arita, Makoto;Motooka, Teruaki;
10:14:6:9 Structural and photoelectrical characteristics of Si/6H-SiC heterojunctions prepared by hot-wall chemical vapor deposition
DOI:10.1016/j.mssp.2013.03.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Yang, Chen;Chen, Zhiming;Liu, Weiguo;Zeng, Xierong;
10:14:6:10 Growth of 3C-SiC on Si(111) using the four-step non-cooling process
DOI:10.1016/j.tsf.2010.05.055 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Liu, Jui-Min;Chen, Wei-Yu;Hwang, J.;Huang, C-F.;Wang, Wei-Lin;Chang, Li;
10:14:7:1 Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si
DOI:10.1016/j.jallcom.2011.03.082 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Demircioglu, O.;Karatas, S.;Yildirim, N.;Bakkaloglu, O. F.;Turut, A.;
10:14:7:2 Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range
DOI:10.1016/j.jallcom.2010.07.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Abay, B.;
10:14:7:3 Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K
DOI:10.1016/j.mssp.2012.03.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:7 AU: Korucu, D.;Efeoglu, H.;Turut, A.;Altindal, S.;
10:14:7:4 Electrical and structural properties of a stacked metal layer contact to n-InP
DOI:10.1016/j.apsusc.2010.11.075 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Huang, Wen-Chang;Horng, Chia-Tsung;
10:14:7:5 The current-voltage and capacitance-voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs
DOI:10.1016/j.materresbull.2014.02.011 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Ozerli, Halil;Karteri, Ibrahim;Karatas, Sukru;Altindal, Semsettin;
10:14:7:6 On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures
DOI:10.1016/j.mssp.2014.08.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Karatas, Sukru;Cakar, Muzaffer;Turut, Abdulmecit;
10:14:7:7 Double Gaussian distribution of barrier height for FeCrNiC alloy Schottky contacts on p-Si substrates
DOI:10.1016/j.apsusc.2014.05.126 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Bestas, A. N.;Yazici, S.;Aktas, F.;Abay, B.;
10:14:7:8 Investigation of nano patches in Ni/n-Si micro Schottky diodes with new aspect
DOI:10.1016/j.mssp.2011.04.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:3 AU: Yeganeh, M.;Rahmatallahpur, Sh.;Mamedov, R. K.;
10:14:8:1 The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
DOI:10.1063/1.3468376 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:29 AU: Tascioglu, Ilke;Aydemir, Umut;Altindal, Semsettin;
10:14:8:2 Analysis of the forward and reverse bias I-V characteristics on Au/PVA: Zn/n-Si Schottky barrier diodes in the wide temperature range
DOI:10.1063/1.3552599 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Tascioglu, Ilke;Aydemir, Umut;Altindal, Semsettin;Kinaci, Baris;Ozcelik, Suleyman;
10:14:8:3 Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structures
DOI:10.1016/j.mssp.2014.03.051 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Yucedag, I.;Kaya, A.;Tecimer, H.;Altindal, S.;
10:14:8:4 Dipolar-Modulated Charge-Doped Trilayer Organic Semiconductor n-n Heterojunction
DOI:10.1002/smll.201101776 JN:SMALL PY:2012
TC:0 AU: Liu, Jianing;Ditte, Katharina;Jiang, Wei;Wang, Zhaohui;Denz, Cornelia;
10:14:9:1 Determination of contact parameters of Au/Carmine/n-Si Schottky device
DOI:10.1016/j.tsf.2010.06.019 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Aydogan, Sakir;Incekara, Umit;Turut, Abdulmecit;
10:14:9:2 Temperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured schottky barrier diode
DOI:10.1016/j.jallcom.2013.09.123 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Fiat, Songul;Bacaksiz, Emin;Kompitsas, Michael;Cankaya, Guven;
10:14:9:3 Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states
DOI:10.1016/j.mssp.2012.03.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Fiat, Songul;Cankaya, Guven;
10:14:9:4 The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films
DOI:10.1016/j.tsf.2013.07.032 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Fiat, S.;Koralli, P.;Bacaksiz, E.;Giannakopoulos, K. P.;Kompitsas, M.;Manolakos, D. E.;Cankaya, G.;
10:14:10:1 Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell
DOI:10.1016/j.tsf.2010.10.030 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Soylu, Murat;Yakuphanoglu, Fahrettin;
10:14:10:2 The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures
DOI:10.1016/j.jallcom.2013.04.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: Altuntas, H.;Ozcelik, S.;
10:14:10:3 The effect of frequency and temperature on capacitance/conductance-voltage (C/G-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)
DOI:10.1016/j.mssp.2014.02.022 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Demirezen, S.;Ozavci, E.;Altindal, S.;
10:15:1 Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
DOI:10.1063/1.3453870 JN:APPLIED PHYSICS LETTERS PY:2010
TC:77 AU: Tsai, Chih-Tsung;Chang, Ting-Chang;Chen, Shih-Ching;Lo, Ikai;Tsao, Shu-Wei;Hung, Ming-Chin;Chang, Jiun-Jye;Wu, Chen-Yi;Huang, Chun-Yao;
10:15:2 Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
DOI:10.1063/1.3481676 JN:APPLIED PHYSICS LETTERS PY:2010
TC:73 AU: Chen, Te-Chih;Chang, Ting-Chang;Tsai, Chih-Tsung;Hsieh, Tien-Yu;Chen, Shih-Ching;Lin, Chia-Sheng;Hung, Ming-Chin;Tu, Chun-Hao;Chang, Jiun-Jye;Chen, Po-Lun;
10:15:3 Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
DOI:10.1063/1.3609873 JN:APPLIED PHYSICS LETTERS PY:2011
TC:51 AU: Chen, Te-Chih;Chang, Ting-Chang;Hsieh, Tien-Yu;Lu, Wei-Siang;Jian, Fu-Yen;Tsai, Chih-Tsung;Huang, Sheng-Yao;Lin, Chia-Sheng;
10:15:4 Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
DOI:10.1063/1.3457996 JN:APPLIED PHYSICS LETTERS PY:2010
TC:52 AU: Chen, Yu-Chun;Chang, Ting-Chang;Li, Hung-Wei;Chen, Shih-Ching;Lu, Jin;Chung, Wan-Fang;Tai, Ya-Hsiang;Tseng, Tseung-Yuen;
10:15:5 Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
DOI:10.1063/1.3580614 JN:APPLIED PHYSICS LETTERS PY:2011
TC:42 AU: Chung, Wan-Fang;Chang, Ting-Chang;Li, Hung-Wei;Chen, Shih-Ching;Chen, Yu-Chun;Tseng, Tseung-Yuen;Tai, Ya-Hsiang;
10:15:6 Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
DOI:10.1063/1.3514251 JN:APPLIED PHYSICS LETTERS PY:2010
TC:45 AU: Chen, Te-Chih;Chang, Ting-Chang;Hsieh, Tien-Yu;Tsai, Chih-Tsung;Chen, Shih-Ching;Lin, Chia-Sheng;Hung, Ming-Chin;Tu, Chun-Hao;Chang, Jiun-Jye;Chen, Po-Lun;
10:15:7 Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
DOI:10.1063/1.4754627 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Teng, Li-Feng;Liu, Po-Tsun;Lo, Yuan-Jou;Lee, Yao-Jen;
10:15:8 Role of environmental and annealing conditions on the passivation-free in-Ga-Zn-O TFT
DOI:10.1016/j.tsf.2011.08.088 JN:THIN SOLID FILMS PY:2011
TC:21 AU: Fuh, Chur-Shyang;Sze, Simon Min;Liu, Po-Tsun;Teng, Li-Feng;Chou, Yi-Teh;
10:15:9 Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.3608241 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Dai, Chih-Hao;Chang, Ting-Chang;Chu, Ann-Kuo;Kuo, Yuan-Jui;Ho, Szu-Han;Hsieh, Tien-Yu;Lo, Wen-Hung;Chen, Ching-En;Shih, Jou-Miao;Chung, Wan-Lin;Dai, Bai-Shan;Chen, Hua-Mao;Xia, Guangrui;Cheng, Osbert;Huang, Cheng Tung;
10:15:10 Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.3560463 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Dai, Chih-Hao;Chang, Ting-Chang;Chu, Ann-Kuo;Kuo, Yuan-Jui;Lo, Wen-Hung;Ho, Szu-Han;Chen, Ching-En;Shih, Jou-Miao;Chen, Hua-Mao;Dai, Bai-Shan;Xia, Guangrui;Cheng, Osbert;Huang, Cheng Tung;
10:15:11 Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
DOI:10.1063/1.4709417 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Chang, Geng-Wei;Chang, Ting-Chang;Jhu, Jhe-Ciou;Tsai, Tsung-Ming;Syu, Yong-En;Chang, Kuan-Chang;Tai, Ya-Hsiang;Jian, Fu-Yen;Hung, Ya-Chi;
10:15:12 High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium-Indium-Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel
DOI:10.1021/am404490t JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Park, Jae Chul;Ahn, Seung-Eon;Lee, Ho-Nyeon;
10:15:13 Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor
DOI:10.1021/am506805a JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Lee, In-Kyu;Lee, Kwan Hyi;Lee, Seok;Cho, Won-Ju;
10:15:14 Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering
DOI:10.1016/j.actamat.2011.07.032 JN:ACTA MATERIALIA PY:2011
TC:23 AU: Seo, Dong Kyu;Shin, Sangwoo;Cho, Hyung Hee;Kong, Bo Hyun;Whang, Dong Mok;Cho, Hyung Koun;
10:15:15 Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
DOI:10.1063/1.4883899 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Chen, Hsin-lu;Chang, Ting-Chang;Young, Tai-Fa;Tsai, Tsung-Ming;Chang, Kuan-Chang;Zhang, Rui;Huang, Sheng-Yao;Chen, Kai-Huang;Lou, J. C.;Chen, Min-Chen;Shih, Chih-Cheng;Huang, Syuan-Yong;Chen, Jung-Hui;
10:15:16 Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
DOI:10.1063/1.4868430 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Liu, Kuan-Hsien;Chang, Ting-Chang;Wu, Ming-Siou;Hung, Yi-Syuan;Hung, Pei-Hua;Hsieh, Tien-Yu;Chou, Wu-Ching;Chu, Ann-Kuo;Sze, Simon M.;Yeh, Bo-Liang;
10:15:17 Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
DOI:10.1063/1.4863682 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Liu, Kuan-Hsien;Chang, Ting-Chang;Chang, Kuan-Chang;Tsai, Tsung-Ming;Hsieh, Tien-Yu;Chen, Min-Chen;Yeh, Bo-Liang;Chou, Wu-Ching;
10:15:18 Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In-Ga-Zn-O thin film transistors
DOI:10.1016/j.tsf.2014.09.051 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Chen, Bo-Wei;Chang, Ting-Chang;Hung, Yu-Ju;Hsieh, Tien-Yu;Tsai, Ming-Yen;Liao, Po-Yung;Tsai, Wu-Wei;Chiang, Wen-Jen;Yan, Jing-Yi;
10:15:19 Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
DOI:10.1063/1.3697644 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Lo, Wen-Hung;Chang, Ting-Chang;Tsai, Jyun-Yu;Dai, Chih-Hao;Chen, Ching-En;Ho, Szu-Han;Chen, Hua-Mao;Cheng, Osbert;Huang, Cheng-Tung;
10:15:20 Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
DOI:10.1063/1.4811784 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Tsai, Jyun-Yu;Chang, Ting-Chang;Lo, Wen-Hung;Chen, Ching-En;Ho, Szu-Han;Chen, Hua-Mao;Tai, Ya-Hsiang;Cheng, Osbert;Huang, Cheng-Tung;
10:15:21 Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor
DOI:10.1016/j.tsf.2014.09.050 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Tsai, Ming-Yen;Chang, Ting-Chang;Chu, Ann-Kuo;Hsieh, Tien-Yu;Lin, Kun-Yao;Wu, Yi-Chun;Huang, Shih-Feng;Chiang, Cheng-Lung;Chen, Po-Lin;Lai, Tzu-Chieh;Lo, Chang-Cheng;Lien, Alan;
10:15:22 Nitrogenated amorphous InGaZnO thin film transistor
DOI:10.1063/1.3551537 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Liu, Po-Tsun;Chou, Yi-Teh;Teng, Li-Feng;Li, Fu-Hai;Shieh, Han-Ping;
10:15:23 Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors
DOI:10.1063/1.4723573 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Hsieh, Tien-Yu;Chang, Ting-Chang;Chen, Te-Chih;Tsai, Ming-Yen;Chen, Yu-Te;Chung, Yi-Chen;Ting, Hung-Che;Chen, Chia-Yu;
10:15:24 High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors
DOI:10.1063/1.4813090 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Tsai, Ming-Yen;Chang, Ting-Chang;Chu, Ann-Kuo;Hsieh, Tien-Yu;Chen, Te-Chih;Lin, Kun-Yao;Tsai, Wu-Wei;Chiang, Wen-Jen;Yan, Jing-Yi;
10:15:25 Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination
DOI:10.1016/j.tsf.2011.09.002 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Chen, T. C.;Chang, T. C.;Hsieh, T. Y.;Tsai, C. T.;Chen, S. C.;Lin, C. S.;Jian, F. Y.;Tsai, M. Y.;
10:15:26 Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
DOI:10.1016/j.tsf.2011.07.027 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Dai, Chih-Hao;Chang, Ting-Chang;Chu, Ann-Kuo;Kuo, Yuan-Jui;Hung, Ya-Chi;Lo, Wen-Hung;Ho, Szu-Han;Chen, Ching-En;Shih, Jou-Miao;Chung, Wan-Lin;Chen, Hua-Mao;Dai, Bai-Shan;Tsai, Tsung-Ming;Xia, Guangrui;Cheng, Osbert;Huang, Cheng Tung;
10:15:27 Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4739525 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Ho, Szu-Han;Chang, Ting-Chang;Wu, Chi-Wei;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Luo, Hung-Ping;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Sze, Simon M.;
10:15:28 Self-heating enhanced charge trapping effect for InGaZnO thin film transistor
DOI:10.1063/1.4733617 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Chen, Te-Chih;Chang, Ting-Chang;Hsieh, Tien-Yu;Tsai, Ming-Yen;Chen, Yu-Te;Chung, Yi-Chen;Ting, Hung-Che;Chen, Chia-Yu;
10:15:29 Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor
DOI:10.1063/1.4824329 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Tsai, Ming-Yen;Chang, Ting-Chang;Chu, Ann-Kuo;Chen, Te-Chih;Hsieh, Tien-Yu;Lin, Kun-Yao;Tsai, Wu-Wei;Chiang, Wen-Jen;Yan, Jing-Yi;
10:15:30 Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
DOI:10.1063/1.4793535 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Raja, Jayapal;Jang, Kyungsoo;Balaji, Nagarajan;Choi, Woojin;Thanh Thuy Trinh;Yi, Junsin;
10:15:31 Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4773479 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Ho, Szu-Han;Chang, Ting-Chang;Wu, Chi-Wei;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Liu, Guan-Ru;Chen, Hua-Mao;Lu, Ying-Shin;Wang, Bin-Wei;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Sze, Simon M.;
10:15:32 Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
DOI:10.1063/1.4896995 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Tsai, Jyun-Yu;Chang, Ting-Chang;Chen, Ching-En;Ho, Szu-Han;Liu, Kuan-Ju;Lu, Ying-Hsin;Liu, Xi-Wen;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Lu, Ching-Sen;
10:15:33 Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
DOI:10.1063/1.4868532 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Ho, Szu-Han;Chang, Ting-Chang;Lu, Ying-Hsin;Chen, Ching-En;Tsai, Jyun-Yu;Liu, Kuan-Ju;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Lu, Ching-Sen;
10:15:34 Effect of N(2)O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors
DOI:10.1016/j.tsf.2011.10.002 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Hsieh, Tien-Yu;Chang, Ting-Chang;Chen, Te-Chih;Tsai, Ming-Yen;Lu, Wei-Hsiang;Chen, Shih-Cheng;Jian, Fu-Yen;Lin, Chia-Sheng;
10:15:35 Investigating the degradation behavior under hot carrier stress for InGaZnO TFTs with symmetric and asymmetric structures
DOI:10.1016/j.tsf.2012.10.095 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Tsai, Ming-Yen;Chang, Ting-Chang;Chu, Ann-Kuo;Chen, Te-Chih;Hsieh, Tien-Yu;Chen, Yu-Te;Tsai, Wu-Wei;Chiang, Wen-Jen;Yan, Jing-Yi;
10:15:36 High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor
DOI:10.1063/1.4731773 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Chen, Yu-Chun;Chang, Ting-Chang;Li, Hung-Wei;Chung, Wan-Fang;Wu, Chang-Pei;Chen, Shih-Ching;Lu, Jin;Chen, Yi-Hsien;Tai, Ya-Hsiang;
10:15:37 Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
DOI:10.1063/1.4791676 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Tsai, Jyun-Yu;Chang, Ting-Chang;Lo, Wen-Hung;Chen, Ching-En;Ho, Szu-Han;Chen, Hua-Mao;Tai, Ya-Hsiang;Cheng, Osbert;Huang, Cheng-Tung;
10:15:38 Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
DOI:10.1063/1.4773914 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Ho, Szu-Han;Chang, Ting-Chang;Wang, Bin-Wei;Lu, Ying-Shin;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Chen, Hua-Mao;Liu, Guan-Ru;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Cao, Xi-Xin;
10:15:39 Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment
DOI:10.1063/1.4832327 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Jhu, Jhe-Ciou;Chang, Ting-Chang;Chang, Geng-Wei;Tai, Ya-Hsiang;Tsai, Wu-Wei;Chiang, Wen-Jen;Yan, Jing-Yi;
10:15:40 Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress
DOI:10.1016/j.tsf.2012.09.093 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Hsieh, Tien-Yu;Chang, Ting-Chang;Chen, Te-Chih;Tsai, Ming-Yen;Chen, Yu-Te;
10:15:41 Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4769444 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Ho, Szu-Han;Chang, Ting-Chang;Lu, Ying-shin;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Chen, Hua-Mao;Wu, Chi-Wei;Luo, Hung-Ping;Liu, Guan-Ru;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Sze, Simon M.;
10:15:42 Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
DOI:10.1063/1.4752456 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Lo, Wen-Hung;Chang, Ting-Chang;Tsai, Jyun-Yu;Dai, Chih-Hao;Chen, Ching-En;Ho, Szu-Han;Chen, Hua-Mao;Cheng, Osbert;Huang, Cheng-Tung;
10:15:43 Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
DOI:10.1063/1.4816269 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Huang, Jheng-Jie;Chang, Ting-Chang;Yu, Chih-Cheng;Huang, Hui-Chun;Chen, Yu-Ting;Tseng, Hsueh-Chih;Yang, Jyun-Bao;Sze, Simon M.;Gan, Der-Shin;Chu, Ann-Kuo;Lin, Jian-Yang;Tsai, Ming-Jinn;
10:15:44 Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In-Ga-Zn-O Thin-Film Transistors
DOI:10.1021/am301253x JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:10 AU: Bak, Jun Yong;Yang, Sinhyuk;Ryu, Min Ki;Park, Sang Hee Ko;Hwang, Chi Sun;Yoon, Sung Min;
10:15:45 Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4822158 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Tsai, Jyun-Yu;Chang, Ting-Chang;Lo, Wen-Hung;Ho, Szu-Han;Chen, Ching-En;Chen, Hua-Mao;Tseng, Tseung-Yuen;Tai, Ya-Hsiang;Cheng, Osbert;Huang, Cheng-Tung;
10:15:46 High-k shallow traps observed by charge pumping with varying discharging times
DOI:10.1063/1.4828719 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Ho, Szu-Han;Chang, Ting-Chang;Lu, Ying-Hsin;Wang, Bin-Wei;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Chen, Hua-Mao;Liu, Kuan-Ju;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Chen, Tsai-Fu;Cao, Xi-Xin;
10:15:47 Hybrid solution processed InGaO3(ZnO)(m) thin films with periodic layered structures and thermoelectric properties
DOI:10.1039/c2jm16887a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:2 AU: Kim, Jun Hyeon;Seo, Dong Kyu;Ahn, Cheol Hyoun;Shin, Sang Woo;Cho, Hyung Hee;Cho, Hyung Koun;
10:15:48 High-performance transparent, all-oxide nonvolatile charge trap memory transistor using In-Ga-Zn-O channel and ZnO trap layer
DOI:10.1116/1.4899180 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Bak, Jun Yong;Yoon, Sung Min;
10:15:49 Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses
DOI:10.1016/j.tsf.2011.09.033 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Chen, Yu-Chun;Chang, Ting-Chang;Li, Hung-Wei;Chen, Shih-Cheng;Chung, Wan-Fang;Chen, Yi-Hsien;Tai, Ya-Hsiang;Tseng, Tseung-Yuen;Yeh (Huang), Fon-Shan;
10:15:50 The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors
DOI:10.1063/1.4722787 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Huang, Sheng-Yao;Chang, Ting-Chang;Lin, Li-Wei;Yang, Man-Chun;Chen, Min-Chen;Jhu, Jhe-Ciou;Jian, Fu-Yen;
10:15:51 Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
DOI:10.1063/1.3702794 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Wu, Chun-Yu;Cheng, Huang-Chung;Wang, Chao-Lung;Liao, Ta-Chuan;Chiu, Po-Chun;Tsai, Chih-Hung;Fang, Chun-Hsiang;Lee, Chung-Chun;
10:15:52 Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors
DOI:10.1016/j.tsf.2011.08.104 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Chang, Geng-Wei;Chang, Ting-Chang;Syu, Yong-En;Tsai, Tsung-Ming;Chang, Kuan-Chang;Tu, Chun-Hao;Jian, Fu-Yen;Hung, Ya-Chi;Tai, Ya-Hsiang;
10:15:53 High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
DOI:10.1063/1.3483616 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Liu, Po-Tsun;Chou, Yi-Teh;Teng, Li-Feng;Fuh, Chur-Shyang;
10:15:54 Examination of hot-carrier stress induced degradation on fin field-effect transistor
DOI:10.1063/1.4866437 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Yang, Yi-Lin;Zhang, Wenqi;Yen, Tzu-Sung;Hong, Jia-Jian;Wong, Jie-Chen;Ku, Chao-Chen;Wu, Tai-Hsuan;Wang, Tzuo-Li;Li, Chien-Yi;Wu, Bing-Tze;Lin, Shih-Hung;Yeh, Wen-Kuan;
10:15:55 All-Solution-Processed InGaO3(ZnO)(m) Thin Films with Layered Structure
DOI:10.1155/2013/909786 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Cho, Sung Woon;Kim, Jun Hyeon;Shin, Sangwoo;Cho, Hyung Hee;Cho, Hyung Koun;
10:15:56 Stability of a-InGaZnO thin film transistor under pulsed gate bias stress
DOI:10.1016/j.tsf.2011.11.075 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Seo, Seung-Bum;Jeon, Jae-Hong;Park, Han-Sung;Choe, Hee-Hwan;Seo, Jong-Hyun;Park, Sang-Hee Ko;
10:15:57 High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors
DOI:10.1063/1.3593096 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Kang, Il-Suk;Kim, Young-Su;Seo, Hyun-Sang;Son, Se Wan;Yoon, Eun Ae;Joo, Seung-Ki;Ahn, Chi Won;
10:15:58 Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors
DOI:10.1063/1.4772485 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Huang, Sheng-Yao;Chang, Ting-Chang;Yang, Man-Chun;Lin, Li-Wei;Wu, Ming-hsin;Yang, Kai-Hsiang;Chen, Min-Chen;Chiu, Yi-Jen;Yeh, Bo-Liang;
10:15:59 Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation
DOI:10.1063/1.3502563 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Kimura, Mutsumi;Kamada, Yudai;Fujita, Shizuo;Hiramatsu, Takahiro;Matsuda, Tokiyoshi;Furuta, Mamoru;Hirao, Takashi;
10:15:60 Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors
DOI:10.1063/1.3557066 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Kamada, Yudai;Fujita, Shizuo;Kimura, Mutsumi;Hiramatsu, Takahiro;Matsuda, Tokiyoshi;Furuta, Mamoru;Hirao, Takashi;
10:15:61 Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor
DOI:10.1063/1.4811274 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Lim, Han Jin;Kim, Youngkuk;Jeon, In Sang;Yeo, Jaehyun;Im, Badro;Hong, Soojin;Kim, Bong-Hyun;Nam, Seok-Woo;Kang, Ho-Kyu;Jung, E. S.;
10:15:62 Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors
DOI:10.1063/1.4803536 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kim, Yu-Mi;Jeong, Kwang-Seok;Yun, Ho-Jin;Yang, Seung-Dong;Lee, Sang-Youl;Kim, Yeong-Cheol;Jeong, Jae-Kyeong;Lee, Hi-Deok;Lee, Ga-Won;
10:15:63 Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles
DOI:10.1016/j.tsf.2010.12.202 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Bae, Jung Hyeon;Kim, Gun Hee;Choi, Yu Ri;Kang, Myung Koo;Kim, Dong Lim;Kim, Hyun Jae;
10:15:64 Structural and electrical characteristics of high-kappa ErTixOy gate dielectrics on InGaZnO thin-film transistors
DOI:10.1016/j.tsf.2013.04.139 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Chen, Fa-Hsyang;Her, Jim-Long;Shao, Yu-Hsuan;Li, Wei-Chen;Matsuda, Yasuhiro H.;Pan, Tung-Ming;
10:15:65 Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant
DOI:10.1063/1.3384999 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Jo, Minseok;Kim, Seonghyun;Lee, Joonmyoung;Jung, Seungjae;Park, Ju-Bong;Jung, Hyung-Suk;Choi, Rino;Hwang, Hyunsang;
10:15:66 Controlled ambient and temperature treatment of InGaZnO thin film transistors for improved bias-illumination stress reliability
DOI:10.1116/1.4846216 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:2 AU: Vemuri, Rajitha N. P.;Hasin, Muhammad R.;Alford, T. L.;
10:15:67 Facile, hetero-sized nanocluster array fabrication for investigating the nanostructure-dependence of nonvolatile memory characteristics
DOI:10.1088/0957-4484/22/25/254018 JN:NANOTECHNOLOGY PY:2011
TC:1 AU: Kang, Il-Suk;Kang, Min-Ho;Lee, Eugene;Seo, Hyun-Sang;Ahn, Chi Won;
10:15:68 Indium-gallium-zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement
DOI:10.1016/j.tsf.2013.06.002 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Lin, Huang-Kai;Su, Liang-Yu;Hung, Chia-Chin;Huang, JianJang;
10:16:1 Strong Efficiency Improvements in Ultra-low-Cost Inorganic Nanowire Solar Cells
DOI:10.1002/adma.201001455 JN:ADVANCED MATERIALS PY:2010
TC:73 AU: Musselman, Kevin P.;Wisnet, Andreas;Iza, Diana C.;Hesse, Holger C.;Scheu, Christina;MacManus-Driscoll, Judith L.;Schmidt-Mende, Lukas;
10:16:2 Incompatible Length Scales in Nanostructured Cu2O Solar Cells
DOI:10.1002/adfm.201102263 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:51 AU: Musselman, Kevin P.;Marin, Andrew;Schmidt-Mende, Lukas;MacManus-Driscoll, Judith L.;
10:16:3 Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
DOI:10.1002/adma.201401054 JN:ADVANCED MATERIALS PY:2014
TC:20 AU: Lee, Yun Seog;Chua, Danny;Brandt, Riley E.;Siah, Sin Cheng;Li, Jian V.;Mailoa, Jonathan P.;Lee, Sang Woon;Gordon, Roy G.;Buonassisi, Tonio;
10:16:4 A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO-Cu2O Photovoltaics
DOI:10.1002/adfm.201001956 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:52 AU: Musselman, Kevin P.;Marin, Andrew;Wisnet, Andreas;Scheu, Christina;MacManus-Driscoll, Judith L.;Schmidt-Mende, Lukas;
10:16:5 Engineering Schottky Contacts in Open-Air Fabricated Heterojunction Solar Cells to Enable High Performance and Ohmic Charge Transport
DOI:10.1021/am5058663 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Hoye, Robert L. Z.;Heffernan, Shane;Ievskaya, Yulia;Sadhanala, Aditya;Flewitt, Andrew;Friend, Richard H.;MacManus-Driscoll, Judith L.;Musselman, Kevin P.;
10:16:6 Enhancing the current density of electrodeposited ZnO-Cu2O solar cells by engineering their heterointerfaces
DOI:10.1039/c2jm35682a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:28 AU: Zoolfakar, Ahmad Sabirin;Rani, Rozina Abdul;Morfa, Anthony J.;Balendhran, Sivacarendran;O'Mullane, Anthony P.;Zhuiykov, Serge;Kalantar-zadeh, Kourosh;
10:16:7 Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells
DOI:10.1039/c3ta13208k JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:16 AU: Lee, Yun Seog;Heo, Jaeyeong;Winkler, Mark T.;Siah, Sin Cheng;Kim, Sang Bok;Gordon, Roy G.;Buonassisi, Tonio;
10:16:8 Absorption coefficient of bulk and thin film Cu2O
DOI:10.1016/j.solmat.2011.05.047 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:38 AU: Malerba, Claudia;Biccari, Francesco;Ricardo, Cristy Leonor Azanza;D'Incau, Mirco;Scardi, Paolo;Mittiga, Alberto;
10:16:9 An analysis of temperature dependent current-voltage characteristics of Cu2O-ZnO heterojunction solar cells
DOI:10.1016/j.tsf.2011.04.241 JN:THIN SOLID FILMS PY:2011
TC:21 AU: Jeong, SeongHo;Song, Sang Ho;Nagaich, Kushagra;Campbell, Stephen A.;Aydil, Eray S.;
10:16:10 Improved Cu2O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction
DOI:10.1002/aenm.201301916 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:15 AU: Lee, Sang Woon;Lee, Yun Seog;Heo, Jaeyeong;Siah, Sin Cheng;Chua, Danny;Brandt, Riley E.;Kim, Sang Bok;Mailoa, Jonathan P.;Buonassisi, Tonio;Gordon, Roy G.;
10:16:11 Thin-film ZnO/Cu2O solar cells incorporating an organic buffer layer
DOI:10.1016/j.solmat.2011.09.043 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:25 AU: Gershon, Talia;Musselman, Kevin P.;Marin, Andrew;Friend, Richard H.;MacManus-Driscoll, Judith L.;
10:16:12 Interface engineering for efficient charge collection in Cu2O/ZnO heterojunction solar cells with ordered ZnO cavity-like nanopatterns
DOI:10.1016/j.solmat.2013.04.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:8 AU: Cheng, Ke;Li, Qianqian;Meng, Jian;Han, Xiao;Wu, Yangqing;Wang, Shujie;Qian, Lei;Du, Zuliang;
10:16:13 Minority carrier transport length of electrodeposited Cu2O in ZnO/Cu2O heterojunction solar cells
DOI:10.1063/1.3579259 JN:APPLIED PHYSICS LETTERS PY:2011
TC:25 AU: Liu, Yingchi;Turley, Hubert K.;Tumbleston, John R.;Samulski, Edward T.;Lopez, Rene;
10:16:14 Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering
DOI:10.1063/1.3589810 JN:APPLIED PHYSICS LETTERS PY:2011
TC:24 AU: Lee, Yun Seog;Winkler, Mark T.;Siah, Sin Cheng;Brandt, Riley;Buonassisi, Tonio;
10:16:15 Accurate determination of interface trap state parameters by admittance spectroscopy in the presence of a Schottky barrier contact: Application to ZnO-based solar cells
DOI:10.1063/1.4799633 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Marin, Andrew T.;Musselman, Kevin P.;MacManus-Driscoll, Judith L.;
10:16:16 Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell
DOI:10.1063/1.4893321 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Masudy-Panah, Saeid;Dalapati, Goutam Kumar;Radhakrishnan, K.;Kumar, Avishek;Tan, Hui Ru;
10:16:17 Transmittance enhancement and optical band gap widening of Cu2O thin films after air annealing
DOI:10.1063/1.4865957 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Wang, Y.;Miska, P.;Pilloud, D.;Horwat, D.;Muecklich, F.;Pierson, J. F.;
10:16:18 Electrodeposited ZnO-Nanowire/Cu2O Photovoltaic Device with Highly Resistive ZnO Intermediate Layer
DOI:10.1021/am502246j JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Izaki, Masanobu;Ohta, Takayuki;Kondo, Misaki;Takahashi, Toshiaki;Mohamad, Fariza Binti;Zamzuri, Mohd;Sasano, Junji;Shinagawa, Tsutomu;Pauporte, Thierry;
10:16:19 Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method
DOI:10.1016/j.jallcom.2013.04.039 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Jeong, Yoon Suk;Kim, Hyunghoon;Lee, Ho Seong;
10:16:20 Solution-processed high-haze ZnO pyramidal textures directly grown on a TCO substrate and the light-trapping effect in Cu2O solar cells
DOI:10.1039/c3tc32413c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:11 AU: Shinagawa, Tsutomu;Shibata, Kosuke;Shimomura, Osamu;Chigane, Masaya;Nomura, Ryoki;Izaki, Masanobu;
10:16:21 Novel Atmospheric Growth Technique to Improve Both Light Absorption and Charge Collection in ZnO/Cu2O Thin Film Solar Cells
DOI:10.1002/adfm.201203243 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:15 AU: Marin, Andrew T.;Munoz-Rojas, David;Iza, Diana C.;Gershon, Talia;Musselman, Kevin P.;MacManus-Driscoll, Judith L.;
10:16:22 The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures
DOI:10.1063/1.3685719 JN:APPLIED PHYSICS LETTERS PY:2012
TC:23 AU: Kramm, B.;Laufer, A.;Reppin, D.;Kronenberger, A.;Hering, P.;Polity, A.;Meyer, B. K.;
10:16:23 Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics
DOI:10.1063/1.4905180 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Brandt, Riley E.;Young, Matthew;Park, Helen Hejin;Dameron, Arrelaine;Chua, Danny;Lee, Yun Seog;Teeter, Glenn;Gordon, Roy G.;Buonassisi, Tonio;
10:16:24 Nitrogen doped Cu2O: A possible material for intermediate band solar cells?
DOI:10.1016/j.solmat.2012.06.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:16 AU: Malerba, Claudia;Azanza Ricardo, Cristy Leonor;D'Incau, Mirco;Biccari, Francesco;Scardi, Paolo;Mittiga, Alberto;
10:16:25 The impact of heterojunction formation temperature on obtainable conversion efficiency in n-ZnO/p-Cu2O solar cells
DOI:10.1016/j.tsf.2012.09.090 JN:THIN SOLID FILMS PY:2013
TC:21 AU: Nishi, Yuki;Miyata, Toshihiro;Minami, Tadatsugu;
10:16:26 Modelling charge transport lengths in heterojunction solar cells
DOI:10.1063/1.4771981 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Musselman, K. P.;Ievskaya, Y.;MacManus-Driscoll, J. L.;
10:16:27 Effects of Mg composition on open circuit voltage of Cu2O-MgxZn1-xO heterojunction solar cells
DOI:10.1016/j.solmat.2011.09.047 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:29 AU: Duan, Ziqing;Du Pasquier, Aurelien;Lu, Yicheng;Xu, Yi;Garfunkel, Eric;
10:16:28 High Efficiency Semiconductor-Liquid Junction Solar Cells based on Cu/Cu2O
DOI:10.1002/adfm.201200365 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:15 AU: Shao, Fang;Sun, Jing;Gao, Lian;Luo, Jianqiang;Liu, Yangqiao;Yang, Songwang;
10:16:29 Low resistivity of N-doped Cu2O thin films deposited by if-magnetron sputtering
DOI:10.1016/j.apsusc.2013.08.122 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Lai, Guozhong;Wu, Yangwei;Lin, Limei;Qu, Yan;Lai, Fachun;
10:16:30 Epitaxially Aligned Cuprous Oxide Nanowires for All-Oxide, Single-Wire Solar Cells
DOI:10.1021/nl501750h JN:NANO LETTERS PY:2014
TC:2 AU: Brittman, Sarah;Yoo, Youngdong;Dasgupta, Neil P.;Kim, Si-in;Kim, Bongsoo;Yang, Peidong;
10:16:31 Nano-structured Cu2O solar cells fabricated on sparse ZnO nanorods
DOI:10.1016/j.solmat.2011.04.034 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:29 AU: Chen, Jhin-Wei;Perng, Dung-Ching;Fang, Jia-Feng;
10:16:32 Improved fill factors in solution-processed ZnO/Cu2O photovoltaics
DOI:10.1016/j.tsf.2013.03.041 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Gershon, Talia S.;Sigdel, Ajaya K.;Marin, Andrew T.;van Hest, Maikel F. A. M.;Ginley, David S.;Friend, Richard H.;MacManus-Driscoll, Judith L.;Berry, Joseph J.;
10:16:33 Efficiency improvement of Cu2O-based heterojunction solar cells fabricated using thermally oxidized copper sheets
DOI:10.1016/j.tsf.2013.11.026 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Minami, Tadatsugu;Miyata, Toshihiro;Nishi, Yuki;
10:16:34 Dielectric function and magneto-optical Voigt constant of Cu2O: A combined spectroscopic ellipsometry and polar magneto-optical Kerr spectroscopy study
DOI:10.1103/PhysRevB.84.195203 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Haidu, Francisc;Fronk, Michael;Gordan, Ovidiu D.;Scarlat, Camelia;Salvan, Georgeta;Zahn, Dietrich R. T.;
10:16:35 Controlling the preferred orientation in sputter-deposited Cu2O thin films: Influence of the initial growth stage and homoepitaxial growth mechanism
DOI:10.1016/j.actamat.2014.05.008 JN:ACTA MATERIALIA PY:2014
TC:3 AU: Wang, Y.;Ghanbaja, J.;Soldera, F.;Boulet, P.;Horwat, D.;Muecklich, F.;Pierson, J. F.;
10:16:36 Interface functionalization with polymer self-assembly to boost photovoltage of Cu2O/ZnO nanowires solar cells
DOI:10.1016/j.ijhydene.2014.04.108 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:0 AU: Xie, Jiale;Quo, Chunxian;Li, Chang Ming;
10:16:37 Annealing effects and photoelectric properties of single-oriented Cu2O films electrodeposited on Au(111)/Si(100) substrates
DOI:10.1039/c3ta11116d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:6 AU: Shinagawa, Tsutomu;Onoda, Masanori;Fariza, Binti Mohamad;Sasano, Junji;Izaki, Masanobu;
10:16:38 Cu2O/MgO band alignment and Cu2O-Au nanocomposites with enhanced optical absorption
DOI:10.1364/OME.3.001974 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:2 AU: Wang, Xuemin;Yan, Dawei;Shen, Changle;Wang, Yuying;Wu, Weidong;Li, Weihua;Jiang, Zhongqian;Lei, Hongwen;Zhou, Minjie;Tang, Yongjian;
10:16:39 Growth of similar to 5 cm(2)V(-1)s(-1) mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225 degrees C and below
DOI:10.1063/1.4771681 JN:AIP ADVANCES PY:2012
TC:6 AU: Munoz-Rojas, D.;Jordan, M.;Yeoh, C.;Marin, A. T.;Kursumovic, A.;Dunlop, L. A.;Iza, D. C.;Chen, A.;Wang, H.;Driscoll, J. L. MacManus;
10:16:40 Valence band offset of Cu2O/In2O3 heterojunction determined by X-ray photoelectron spectroscopy
DOI:10.1063/1.3641637 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Dong, C. J.;Yu, W. X.;Xu, M.;Cao, J. J.;Chen, C.;Yu, W. W.;Wang, Y. D.;
10:16:41 Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance
DOI:10.1155/2013/421371 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:5 AU: Baek, Seung Ki;Lee, Ki Ryong;Cho, Hyung Koun;
10:16:42 Chlorine doping of Cu2O
DOI:10.1016/j.solmat.2010.06.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:16 AU: Biccari, Francesco;Malerba, Claudia;Mittiga, Alberto;
10:16:43 Effect of the thin Ga2O3 layer in n(+)-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells
DOI:10.1016/j.tsf.2013.06.038 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Minami, Tadatsugu;Nishi, Yuki;Miyata, Toshihiro;
10:16:44 All oxide ultraviolet photodetectors based on a p-Cu2O film/n-ZnO heterostructure nanowires
DOI:10.1016/j.tsf.2014.05.026 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Ok, Yul Ho;Lee, Ki Ryong;Jung, Byung Oh;Kwon, Yong Hun;Cho, Hyung Koun;
10:16:45 Morphology evolutions and optical properties of Cu2O films by an electrochemical deposition on flexible substrate
DOI:10.1016/j.apsusc.2011.11.070 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Zhai, Yuchun;Fan, Huiqing;Li, Qiang;Yan, Wei;
10:16:46 Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu2O) thin-films
DOI:10.1063/1.4758305 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Siah, Sin Cheng;Lee, Yun Seog;Segal, Yaron;Buonassisi, Tonio;
10:16:47 Electrodeposition of hierarchical ZnO/Cu2O nanorod films for highly efficient visible-light-driven photocatalytic applications
DOI:10.1063/1.4863468 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Ren, S. T.;Fan, G. H.;Liang, M. L.;Wang, Q.;Zhao, G. L.;
10:16:48 Solution-processed all-oxide nanostructures for heterojunction solar cells
DOI:10.1039/c1jm13303a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:10 AU: Shiu, Hui-Ying;Tsai, Chung-Min;Chen, Szu-Ying;Yew, Tri-Rung;
10:16:49 Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition
DOI:10.1016/j.mseb.2013.02.004 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:3 AU: Li, Qiang;Xu, Mengmeng;Fan, Huiqing;Wang, Hairong;Peng, Biaolin;Long, Changbai;Zhai, Yuchun;
10:16:50 Reduced graphene oxide-cuprous oxide hybrid nanopowders: Solvothermal synthesis and electrochemical performance
DOI:10.1016/j.mssp.2014.08.045 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: He, Zhanjun;Zhu, Yabo;
10:16:51 Enhancing the efficiency of ZnO/Cu2O inorganic nanostructure solar cells simply by CdS quantum dots
DOI:10.1016/j.solmat.2014.07.027 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Wang, Lidan;Zhao, Yongxia;Wang, Guanhua;Zhou, Hua;Geng, Chao;Wu, Cunqi;Xu, Jingwei;
10:16:52 Growth behavior and optical properties of N-doped Cu2O films
DOI:10.1016/j.tsf.2011.07.037 JN:THIN SOLID FILMS PY:2011
TC:14 AU: Li, H. J.;Pu, C. Y.;Ma, C. Y.;Li, Sh.;Dong, W. J.;Bao, S. Y.;Zhang, Q. Y.;
10:16:53 Effects of preparation temperature on optical and electrical characteristics of (111)-oriented Cu2O films electrodeposited on (111)-Au film
DOI:10.1016/j.tsf.2011.08.079 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Izaki, Masanobu;Sasaki, Shunsuke;Mohamad, Fariza Binti;Shinagawa, Tsutomu;Ohta, Takayuki;Watase, Seiji;Sasano, Junji;
10:16:54 Influence of Cu2O surface treatment on the photovoltaic properties of Al-doped ZnO/Cu2O solar cells
DOI:10.1016/j.tsf.2011.08.032 JN:THIN SOLID FILMS PY:2012
TC:13 AU: Nishi, Yuki;Miyata, Toshihiro;Nomoto, Jun-ichi;Minami, Tadatsugu;
10:16:55 Hybrid ZnO/Phthalocyanine Photovoltaic Device with Highly Resistive ZnO Intermediate Layer
DOI:10.1021/am403137x JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Izaki, Masanobu;Chizaki, Ryo;Saito, Takamasa;Murata, Kazufumi;Sasano, Junji;Shinagawa, Tsutomu;
10:16:56 Low temperature (< 100 degrees C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy
DOI:10.1016/j.tsf.2011.04.192 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Li, Flora M.;Waddingham, Rob;Milne, William I.;Flewitt, Andrew J.;Speakman, Stuart;Dutson, James;Wakeham, Steve;Thwaites, Mike;
10:16:57 p-Cu2O/n-ZnO heterojunction fabricated by hydrothermal method
DOI:10.1007/s00339-012-7111-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Jia, Wei;Dong, Hailiang;Zhao, Junfu;Dang, Suihu;Zhang, Zhuxia;Li, Tianbao;Liu, Xuguang;Xu, Bingshe;
10:16:58 Hybrid Cu2O Diode with Orientation-Controlled C-60 Polycrystal
DOI:10.1021/am3006093 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:3 AU: Izaki, Masanobu;Saito, Takamasa;Ohata, Tatsuya;Murata, Kazufumi;Fariza, Binti Mohamad;Sasano, Junji;Shinagawa, Tsutomu;Watase, Seiji;
10:16:59 Manipulation of cuprous oxide surfaces for improving their photocatalytic activity
DOI:10.1039/c4ta00616j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:4 AU: Yoon, Sanghwa;Kim, Misung;Kim, In-Soo;Lim, Jae-Hong;Yoo, Bongyoung;
10:16:60 Review of preparation and optoelectronic characteristics of Cu2O-based solar cells with nanostructure
DOI:10.1016/j.mssp.2012.12.028 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:16 AU: Chen, Lung-Chien;
10:16:61 Impact of incorporating sodium into polycrystalline p-type Cu2O for heterojunction solar cell applications
DOI:10.1063/1.4902879 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Minami, Tadatsugu;Nishi, Yuki;Miyata, Toshihiro;
10:16:62 Morphological study of PLD grown CuO films on SrTiO3, sapphire, quartz and MgO substrates
DOI:10.1016/j.apsusc.2012.06.055 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Kawwam, M.;Alharbi, F.;Aldwayyan, A.;Lebbou, K.;
10:16:63 Electrical charge conductivity behavior of electrodeposited Cu2O/ZnO heterojunction thin films on PET flexible substrates by impedance spectroscopy analysis
DOI:10.1007/s10853-012-7008-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Li, Qiang;Xu, Mengmeng;Fan, Huiqing;Wang, Hairong;Peng, Biaolin;Long, Changbai;Zhai, Yuchun;
10:16:64 Conversion efficiency enhancement of CdS quantum dot-sensitized electrospun nanostructured TiO2 solar cells by organic dipole treatment
DOI:10.1016/j.matlet.2013.11.060 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Yang, Shengyuan;Nair, A. Sreekumaran;Ramakrishna, Seeram;
10:16:65 Fabrication of copper oxide thin films by the drop chemical deposition technique
DOI:10.1016/j.materresbull.2012.04.013 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Muhibbullah, Muhammad;Ichimura, Masaya;
10:16:66 Basic optical and electronic properties of Ag2Cu2O3 crystalline films
DOI:10.1016/j.tsf.2013.01.044 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Lund, Esben;Galeckas, Augustinas;Monakhov, Edouard V.;Svensson, Bengt G.;
10:16:67 Electrochemical and in situ optical investigations of ZnO deposition
DOI:10.1016/j.jcrysgro.2011.03.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Nobial, Myriam;Devos, Olivier;Tribollet, Bernard;
10:16:68 Effect of inserting a thin buffer layer on the efficiency in n-ZnO/p-Cu2O heterojunction solar cells
DOI:10.1116/1.3698596 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:8 AU: Nishi, Yuki;Miyata, Toshihiro;Minami, Tadatsugu;
10:16:69 Absorption coefficient of bulk and thin film Cu2O (vol 95, pg 2848, 2011)
DOI:10.1016/j.solmat.2011.10.018 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:0 AU: Malerba, Claudia;Biccari, Francesco;Ricardo, Cristy Leonor Azanza;D'Incau, Mirco;Scardi, Paolo;Mittiga, Alberto;
10:16:70 A recombination analysis of Cu(In,Ga)Se-2 solar cells with low and high Ga compositions
DOI:10.1016/j.solmat.2014.01.047 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:6 AU: Li, Jian V.;Grover, Sachit;Contreras, Miguel A.;Ramanathan, Kannan;Kuciauskas, Darius;Noufi, Rommel;
10:16:71 Structural, optical and electrical properties of reactively sputtered Ag2Cu2O3 films
DOI:10.1016/j.tsf.2011.07.030 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Lund, E.;Galeckas, A.;Monakhov, E. V.;Svensson, B. G.;
10:16:72 Phases in copper-gallium-metal-sulfide films (metal=titanium, iron, or tin)
DOI:10.1016/j.tsf.2011.01.137 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Marsen, B.;Klemz, S.;Landi, G.;Steinkopf, L.;Scheer, R.;Schorr, S.;Schock, H. -W.;
10:17:1 Synthesis and characterization of ZnO nanoparticles prepared in gelatin media
DOI:10.1016/j.matlet.2010.09.029 JN:MATERIALS LETTERS PY:2011
TC:57 AU: Zak, A. Khorsand;Abd Majid, W. H.;Darroudi, Majid;Yousefi, Ramin;
10:17:2 Effects of annealing temperature on some structural and optical properties of ZnO nanoparticles prepared by a modified sol-gel combustion method
DOI:10.1016/j.ceramint.2010.08.017 JN:CERAMICS INTERNATIONAL PY:2011
TC:76 AU: Zak, A. Khorsand;Abrishami, M. Ebrahimizadeh;Abd Majid, W. H.;Yousefi, Ramin;Hosseini, S. M.;
10:17:3 Starch-stabilized synthesis of ZnO nanopowders at low temperature and optical properties study
DOI:10.1016/j.apt.2012.11.008 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:26 AU: Zak, A. Khorsand;Abd Majid, W. H.;Mahmoudian, M. R.;Darroudi, Majid;Yousefi, Ramin;
10:17:4 Facile synthesis and X-ray peak broadening studies of Zn1-xMgxO nanopaiticles
DOI:10.1016/j.ceramint.2011.10.042 JN:CERAMICS INTERNATIONAL PY:2012
TC:26 AU: Zak, A. Khorsand;Yousefi, Ramin;Abd Majid, W. H.;Muhamad, M. R.;
10:17:5 Solvothermal synthesis of microsphere ZnO nanostructures in DEA media
DOI:10.1016/j.ceramint.2011.06.026 JN:CERAMICS INTERNATIONAL PY:2011
TC:30 AU: Razali, R.;Zak, A. Khorsand;Abd Majid, W. H.;Darroudi, Majid;
10:17:6 The effect of group-I elements on the structural and optical properties of ZnO nanoparticles
DOI:10.1016/j.ceramint.2012.07.076 JN:CERAMICS INTERNATIONAL PY:2013
TC:29 AU: Yousefi, Ramin;Zak, A. Khorsand;Jamali-Sheini, Farid;
10:17:7 Effect of indium concentration on morphology and optical properties of In-doped ZnO nano structures
DOI:10.1016/j.ceramint.2012.04.085 JN:CERAMICS INTERNATIONAL PY:2012
TC:27 AU: Yousefi, Ramin;Jamali-Sheini, Farid;Zak, A. Khorsand;Mahmoudian, M. R.;
10:17:8 Aqueous starch as a stabilizer in zinc oxide nanoparticle synthesis via laser ablation
DOI:10.1016/j.jallcom.2011.11.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:27 AU: Zamiri, Reza;Zakaria, Azmi;Ahangar, Hossein Abbastabar;Darroudi, Majid;Zak, Ali Khorsand;Drummen, Gregor P. C.;
10:17:9 Fabrication of well-aligned and dumbbell-shaped hexagonal ZnO nanorod arrays and their dye sensitized solar cell applications
DOI:10.1016/j.jallcom.2010.05.022 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:25 AU: Qurashi, Ahsanulhaq;Hossain, M. F.;Faiz, M.;Tabet, N.;Alam, Mir Wakas;Reddy, N. Koteeswara;
10:17:10 Green synthesis of zinc oxide nanoparticles by aloe barbadensis miller leaf extract: Structure and optical properties
DOI:10.1016/j.materresbull.2011.07.046 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:52 AU: Sangeetha, Gunalan;Rajeshwari, Sivaraj;Venckatesh, Rajendran;
10:17:11 Green chemistry approach for the synthesis of ZnO nanopowders and their cytotoxic effects
DOI:10.1016/j.ceramint.2013.09.032 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Darroudi, Majid;Sabouri, Zahra;Oskuee, Reza Kazemi;Zak, Ali Khorsand;Kargar, Hadi;Abd Hamid, Mohamad Hasnul Naim;
10:17:12 Sol-gel synthesis, characterization, and neurotoxicity effect of zinc oxide nanoparticles using gum tragacanth
DOI:10.1016/j.ceramint.2013.05.021 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Darroudi, Majid;Sabouri, Zahra;Oskuee, Reza Kazemi;Zak, Ali Khorsand;Kargar, Hadi;Hamid, Mohamad Hasnul Naim Abd;
10:17:13 Synthesis of zinc oxide nanocrystalline powders for cosmetic applications
DOI:10.1016/j.ceramint.2009.10.011 JN:CERAMICS INTERNATIONAL PY:2010
TC:27 AU: Kuo, Chia-Liang;Wang, Cheng-Li;Ko, Horng-Huey;Hwang, Weng-Sing;Chang, Kuo-ming;Li, Wang-Long;Huang, Hong-Hsin;Chang, Yen-Hwei;Wang, Moo-Chin;
10:17:14 Microleakage and antibacterial properties of ZnO and ZnO:Ag nanopowders prepared via a sol-gel method for endodontic sealer application
DOI:10.1007/s11051-013-1925-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:2 AU: Rad, M. Shayani;Kompany, A.;Zak, A. Khorsand;Javidi, M.;Mortazavi, S. M.;
10:17:15 Investigation of indium oxide as a self-catalyst in ZnO/ZnInO heterostructure nanowires growth
DOI:10.1016/j.tsf.2010.05.111 JN:THIN SOLID FILMS PY:2010
TC:29 AU: Yousefi, Ramin;Muhamad, Muhamad Rasat;Zak, All Khorsand;
10:17:16 Growth of uniform ZnO nanoparticles by a microwave plasma process
DOI:10.1016/j.jallcom.2011.03.161 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Wangensteen, T.;Dhakal, T.;Merlak, M.;Mukherjee, P.;Phan, M. H.;Chandra, S.;Srikanth, H.;Witanachchi, S.;
10:17:17 Facile template-free sonochemical fabrication of hollow ZnO spherical structures
DOI:10.1016/j.matlet.2010.01.039 JN:MATERIALS LETTERS PY:2010
TC:22 AU: Deng, Chonghai;Hu, Hanmei;Shao, Guoquan;Han, Chengliang;
10:17:18 Facile synthesis of Ag/ZnO nanorods using Ag/C cables as templates and their gas-sensing properties
DOI:10.1016/j.matlet.2009.09.032 JN:MATERIALS LETTERS PY:2010
TC:25 AU: Zong, Ying;Cao, Yali;Jia, Dianzeng;Bao, Shujuan;Lu, Yi;
10:17:19 Substrate free synthesis of wide area stannic oxide nano-structured sheets via a sol-gel method using gelatin
DOI:10.1016/j.matlet.2013.07.084 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Zak, A. Khorsand;Golsheikh, A. Moradi;Abd Majid, W. Haliza;Banihashemian, S. M.;
10:17:20 Structural and optical characterizations of ZnO aerogel nanopowder synthesized from zinc acetate ethanolic solution
DOI:10.1016/j.optmat.2014.07.023 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Djouadi, D.;Meddouri, M.;Chelouche, A.;
10:17:21 Influence of lead concentration on morphology and optical properties of Pb-doped ZnO nanowires
DOI:10.1016/j.ceramint.2013.05.008 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Yousefi, Ramin;Jamali-Sheini, Farid;Sa'aedi, Abdolhossain;Zak, A. Khorsand;Cheraghizade, Mohsen;Pilban-Jahromi, Siamak;Huang, Nay Ming;
10:17:22 Optical properties of group-I-doped ZnO nanowires
DOI:10.1016/j.ceramint.2013.08.100 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Sa'aedi, Abdolhossein;Yousefi, Ramin;Jamali-Sheini, Farid;Cheraghizade, Mohsen;Zak, A. Khorsand;Huang, Nay Ming;
10:17:23 Synthesis of ZnO/Cu micro and nanostructures via a vapor phase transport method using different tube systems
DOI:10.1016/j.ceramint.2013.09.123 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Kamalianfar, A.;Halim, S. A.;Zak, A. Khorsand;
10:17:24 Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB
DOI:10.1016/j.ceramint.2014.02.109 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Azarang, Majid;Shuhaimi, Ahmad;Yousefi, Ramin;Golsheikh, A. Moradi;Sookhakian, M.;
10:17:25 ZnO based transparent conductive oxide films with controlled type of conduction
DOI:10.1016/j.tsf.2014.02.090 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Zaharescu, M.;Mihaiu, S.;Toader, A.;Atkinson, I.;Calderon-Moreno, J.;Anastasescu, M.;Nicolescu, M.;Duta, M.;Gartner, M.;Vojisavljevic, K.;Malic, B.;Ivanov, V. A.;Zaretskaya, E. P.;
10:17:26 Growth and optical properties of ZnO-In2O3 heterostructure nanowires
DOI:10.1016/j.ceramint.2012.12.017 JN:CERAMICS INTERNATIONAL PY:2013
TC:12 AU: Yousefi, Ramin;Jamali-Sheini, Farid;Zak, A. Khorsand;Azarang, Majid;
10:17:27 Electrochemical synthesis and surface characterization of hexagonal Cu-ZnO nano-funnel tube films
DOI:10.1016/j.ceramint.2012.10.207 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Jamali-Sheini, Farid;Yousefi, Ramin;
10:17:28 Time controlled synthesis of urchin-like zinc oxide and characterization of its optical properties
DOI:10.1016/j.matlet.2014.05.139 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Xiao, Yonghao;Pan, Zhanchang;Tian, Xinlong;Zhang, Huangchu;Zeng, Xiangfu;Xiao, Chumin;Hu, Guanghui;Wei, Zhigang;
10:17:29 Synthesis of Cu-ZnO and C-ZnO nanoneedle arrays on zinc foil by low temperature oxidation route: Effect of buffer layers on growth, optical and field emission properties
DOI:10.1016/j.apsusc.2011.04.023 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Jamali-Sheini, Farid;Patil, K. R.;Joag, Dilip S.;More, Mahendra A.;
10:17:30 Effect of chlorine ion concentration on morphology and optical properties of Cl-doped ZnO nanostructures
DOI:10.1016/j.ceramint.2012.04.030 JN:CERAMICS INTERNATIONAL PY:2012
TC:16 AU: Yousefi, Ramin;Jamah-Sheini, Farid;
10:17:31 Characterization and X-ray peak broadening analysis in PZT nanoparticles prepared by modified sol-gel method
DOI:10.1016/j.ceramint.2010.03.022 JN:CERAMICS INTERNATIONAL PY:2010
TC:16 AU: Zak, A. Khorsand;Majid, W. H. Abd.;
10:17:32 Effect of solvent on structure and optical properties of PZT nanoparticles prepared by sol-gel method, in infrared region
DOI:10.1016/j.ceramint.2010.10.020 JN:CERAMICS INTERNATIONAL PY:2011
TC:14 AU: Zak, A. Khorsand;Abd Majid, W. H.;
10:17:33 Surface characterization of Au-ZnO nanowire films
DOI:10.1016/j.ceramint.2012.05.054 JN:CERAMICS INTERNATIONAL PY:2012
TC:10 AU: Jamali-Sheini, Farid;Yousefi, Ramin;Patil, K. R.;
10:17:34 Optical and electrical properties of p-type Ag-doped ZnO nanostructures
DOI:10.1016/j.ceramint.2013.12.145 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Khosravi-Gandomani, Sara;Yousefi, Ramin;Jamali-Sheini, Farid;Huang, Nay Ming;
10:17:35 Effect of calcination temperature on the structural and optical properties of ZnO:Fe powders
DOI:10.1016/j.apsusc.2012.03.011 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Zhang, Weiying;Liu, Zhenzhong;Liu, Zhaojun;Zhao, Jianguo;
10:17:36 Optical and structural properties of X-doped (X = Mn, Mg, and Zn) PZT nanoparticles by Kramers-Kronig and size strain plot methods
DOI:10.1016/j.ceramint.2012.04.012 JN:CERAMICS INTERNATIONAL PY:2012
TC:9 AU: Khorrami, Gh. H.;Zak, A. Khorsand;Kompany, A.;Yousefi, Ramin;
10:17:37 Chemical solution deposition of ZnO nanostructure films: Morphology and substrate angle dependency
DOI:10.1016/j.ceramint.2012.01.004 JN:CERAMICS INTERNATIONAL PY:2012
TC:8 AU: Jamali-Sheini, Farid;
10:17:38 Theoretical and experimental approach on dielectric properties of ZnO nanoparticles and polyurethane/ZnO nanocomposites
DOI:10.1063/1.4749414 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Velayutham, T. S.;Abd Majid, W. H.;Gan, W. C.;Zak, A. Khorsand;Gan, S. N.;
10:17:39 Synthesis ZnO nanoparticles from a new Zinc(II) coordination polymer precursor
DOI:10.1016/j.matlet.2009.09.038 JN:MATERIALS LETTERS PY:2010
TC:42 AU: Bigdeli, Fahime;Morsali, Ali;
10:17:40 A facile sol-gel approach to synthesize KNN nanoparticles at low temperature
DOI:10.1016/j.matlet.2013.07.115 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Khorrami, Gh. H.;Kompany, A.;Zak, A. Khorsand;
10:17:41 Effects of ultraviolet treatment on the optical and structural properties of ZnO nanoparticles
DOI:10.1016/j.matchemphys.2011.06.044 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Tsai, Chia-Lung;Tseng, Yu-Chih;Cho, Wei-Min;Lin, Yow-Jon;Chang, Hsing-Cheng;Chen, Ya-Hui;Lin, Chiu-Hsun;
10:17:42 Comparative study of quaternary Mg and Group III element co-doped ZnO thin films with transparent conductive characteristics
DOI:10.1016/j.tsf.2014.02.109 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Kim, In Young;Shin, Seung Wook;Gang, Myeng Gil;Lee, Seung Hyoun;Gurav, K. V.;Patil, P. S.;Yun, Jae Ho;Lee, Jeong Yong;Kim, Jin Hyeok;
10:17:43 Electrochemical synthesis of Cu/ZnO nanocomposite films and their efficient field emission behaviour
DOI:10.1016/j.apsusc.2009.09.056 JN:APPLIED SURFACE SCIENCE PY:2010
TC:18 AU: Sheini, Farid Jamali;Singh, Jai;Srivasatva, O. N.;Joag, Dilip S.;More, Mahendra A.;
10:17:44 Magnetic properties of Eu3+ lightly doped ZnFe2O4 nanoparticles
DOI:10.1016/j.ceramint.2013.04.011 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Yang, Lili;Wang, Zhe;Zhai, Bowen;Shao, Yexu;Zhang, Zhiqiang;Sun, Yunfei;Yang, Jinghai;
10:17:45 Sol-gel synthesis of zinc oxide nanoparticles using Citrus aurantifolia extracts
DOI:10.1016/j.ceramint.2012.10.132 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Samat, Nurul Ain;Nor, Roslan Md;
10:17:46 Effect of pH on the growth of zinc oxide nanorods using Citrus aurantifolia extracts
DOI:10.1016/j.matlet.2014.09.033 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Rafaie, H. A.;Samat, N. A.;Nor, R. Md.;
10:17:47 Facile synthesis and characterization of lanthanum (III) oxychloride nanoparticles using a natural polymeric matrix
DOI:10.1016/j.matchemphys.2012.07.045 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Zak, A. Khorsand;Abd. Majid, W. H.;Darroudi, Majid;
10:17:48 Growth, X-ray peak broadening studies, and optical properties of Mg-doped ZnO nanoparticles
DOI:10.1016/j.mssp.2012.12.025 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:14 AU: Yousefi, Ramin;Zak, A. Khorsand;Jamali-Sheini, Farid;
10:17:49 Electrodeposition of Cu-ZnO nanocomposites: Effect of growth conditions on morphologies and surface properties
DOI:10.1016/j.mssp.2014.07.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Jamali-Sheini, Farid;Yousefi, Ramin;Bakr, Nabeel Ali;Mahmoudian, M. R.;Singh, Jai;Huang, Nay Ming;
10:17:50 Superhydrophobicity and surface enhanced Raman scattering activity of dendritic silver layers
DOI:10.1016/j.tsf.2010.09.033 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Hu, Yawei;Liu, Shan;Huang, Siya;Pan, Wei;
10:17:51 A novel mercury-media route to synthesize ZnO hollow microspheres
DOI:10.1016/j.ceramint.2009.11.017 JN:CERAMICS INTERNATIONAL PY:2010
TC:9 AU: Yang, Qi;Hu, Wenbin;
10:17:52 Low temperature growth of aligned ZnO nanowires and their application as field emission cathodes
DOI:10.1016/j.matchemphys.2009.12.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:9 AU: Sheini, Farid Jamali;Joag, Dilip S.;More, Mahendra A.;Singh, Jai;Srivasatva, O. N.;
10:17:53 Effect of annealing process on the growth and surface properties of Au-ZnO nanowire films grown by chemical routes
DOI:10.1016/j.ceramint.2013.03.011 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: Jamali-Sheini, Farid;Yousefi, Ramin;Mahmoudian, M. R.;
10:17:54 Facile synthesis of different morphologies of Te-doped ZnO nanostructures
DOI:10.1016/j.ceramint.2013.12.115 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Jamali-Sheini, Farid;Yousefi, Ramin;Mahmoudian, M. R.;Bakr, Nabeel Ali;Sa'aedi, Abdolhossein;Huang, Nay Ming;
10:17:55 Sn-ZnO nanoneedles grown on Zn wire as a pointed field emitter and switching device
DOI:10.1016/j.matlet.2013.08.073 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Jamali-Sheini, Farid;Yousefi, Ramin;More, Mahendra A.;Joag, Dilip S.;
10:17:56 Sol-gel combustion synthesis of Zr-doped BaTiO3 nanopowders and ceramics: Dielectric and ferroelectric studies
DOI:10.1016/j.ceramint.2014.07.045 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Aghayan, M.;Zak, A. Khorsand;Behdani, M.;Hashim, A. Manaf;
10:17:57 Synthesis and characterization of single crystal PbO nanoparticles in a gelatin medium
DOI:10.1016/j.ceramint.2014.03.180 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Yousefi, Ratnin;Zak, Ali Khorsand;Jarnali-Sheini, Farid;Huang, Nay Ming;Basirun, Wan Jefrey;Sookhakian, M.;
10:17:58 Isopropanol-assisted hydrothermal synthesis of (K, Na)NbO3 piezoelectric ceramic powders
DOI:10.1007/s10853-010-4348-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:7 AU: Su, Likui;Zhu, Kongjun;Qiu, Jinhao;Ji, Hongli;
10:17:59 Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals
DOI:10.1007/s11051-011-0346-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:8 AU: Balucani, M.;Nenzi, P.;Chubenko, E.;Klyshko, A.;Bondarenko, V.;
10:17:60 Green synthesis and characterization of zinc oxide nanoparticles from Ocimum basilicum L. var. purpurascens Benth.-Lamiaceae leaf extract
DOI:10.1016/j.matlet.2014.05.033 JN:MATERIALS LETTERS PY:2014
TC:8 AU: Salam, Hasna Abdul;Sivaraj, Rajeshwari;Venckatesh, R.;
10:18:1 p-Type ZnO materials: Theory, growth, properties and devices
DOI:10.1016/j.pmatsci.2013.03.002 JN:PROGRESS IN MATERIALS SCIENCE PY:2013
TC:61 AU: Fan, J. C.;Sreekanth, K. M.;Xie, Z.;Chang, S. L.;Rao, K. V.;
10:18:2 ZnO homojunction white light-emitting diodes
DOI:10.1063/1.3627247 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Baltakesmez, Ali;Tekmen, Suleyman;Tuzemen, Sebahattin;
10:18:3 Stable p-Type Conduction from Sb-Decorated Head-to-Head Basal Plane Inversion Domain Boundaries in ZnO Nanowires
DOI:10.1021/nl203848t JN:NANO LETTERS PY:2012
TC:26 AU: Yankovich, Andrew B.;Puchala, Brian;Wang, Fei;Seo, Jung-Hun;Morgan, Dane;Wang, Xudong;Ma, Zhenqiang;Kvit, Alex V.;Voyles, Paul M.;
10:18:4 Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films
DOI:10.1016/j.jallcom.2011.06.048 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Erdogan, N. H.;Kara, K.;Ozdamar, H.;Kavak, H.;Esen, R.;Karaagac, H.;
10:18:5 Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes
DOI:10.1016/j.jallcom.2011.02.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:20 AU: Yang, T.;Yao, B.;Zhao, T. T.;Xing, G. Z.;Wang, H.;Pan, H. L.;Deng, R.;Sui, Y. R.;Gao, L. L.;Wang, H. Z.;Wu, T.;Shen, D. Z.;
10:18:6 Solution-Derived ZnO Homojunction Nanowire Films on Wearable Substrates for Energy Conversion and Self-Powered Gesture Recognition
DOI:10.1021/nl5029182 JN:NANO LETTERS PY:2014
TC:6 AU: Pradel, Ken C.;Wu, Wenzhuo;Ding, Yong;Wang, Zhong Lin;
10:18:7 A study on electrical transport vis-a-vis the effect of thermal annealing on the p-type conductivity in arsenic-doped MOCVD grown ZnO in the temperature range 10-300 K
DOI:10.1016/j.jallcom.2012.10.097 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Biswas, Pranab;Kundu, Souvik;Banerji, P.;
10:18:8 Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method
DOI:10.1016/j.matlet.2011.10.089 JN:MATERIALS LETTERS PY:2012
TC:13 AU: Li, Lei;Hui, K. S.;Hui, K. N.;Park, H. W.;Hwang, D. H.;Cho, Shinho;Lee, S. K.;Song, P. K.;Cho, Y. R.;Lee, Heesoo;Son, Y. G.;Zhou, W.;
10:18:9 Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation
DOI:10.1063/1.4876236 JN:AIP ADVANCES PY:2014
TC:1 AU: Biswas, Pranab;Halder, Nripendra N.;Kundu, Souvik;Banerji, P.;Shripathi, T.;Gupta, M.;
10:18:10 Raman scattering studies of p-type Sb-doped ZnO thin films
DOI:10.1063/1.3516493 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Samanta, Kousik;Bhattacharya, Pijush;Katiyar, Ram S.;
10:18:11 Low resistivity p-type Zn1-xAlxO:Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method
DOI:10.1016/j.materresbull.2012.10.013 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Hui, K. N.;Hui, K. S.;Li, Lei;Cho, Y. R.;Singh, Jai;
10:18:12 Fabrication and characterization of spherical micro semiconductor crystals by laser ablation method
DOI:10.1007/s00339-014-8529-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Shimogaki, Tetsuya;Okazaki, Kota;Yamasaki, Kota;Fusazaki, Koshi;Mizokami, Yasuaki;Tetsuyama, Norihiro;Higashihata, Mitsuhiro;Ikenoue, Hiroshi;Nakamura, Daisuke;Okada, Tatsuo;
10:18:13 The p-type ZnO film realized by a hydrothermal treatment method
DOI:10.1063/1.3549304 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Ding, Meng;Zhao, Dongxu;Yao, Bin;Li, Binghui;Zhang, Zhenzhong;Shen, Dezhen;
10:18:14 CI-Doped ZnO Nanowires with Metallic Conductivity and Their Application for High-Performance Photoelectrochemical Electrodes
DOI:10.1021/am405141s JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Wang, Fei;Seo, Jung-Hun;Li, Zhaodong;Kvit, Alexander V.;Ma, Zhenqiang;Wang, Xudong;
10:18:15 Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping
DOI:10.1016/j.jallcom.2011.03.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:13 AU: Zhang, Daoli;Zhang, Jianbing;Guo, Zhe;Miao, Xiangshui;
10:18:16 A highly efficient UV photodetector based on a ZnO microwire p-n homojunction
DOI:10.1039/c3tc32547d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Shi, Linlin;Wang, Fei;Li, Binghui;Chen, Xing;Yao, Bin;Zhao, Dongxu;Shen, Dezhen;
10:18:17 A facile route to realize p-type ZnO thin films via Li-F codoping: Experiments and theory
DOI:10.1016/j.matlet.2012.07.034 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Cao, Ling;Zhu, Liping;Li, Yaguang;Yang, Meijia;Ye, Zhizhen;
10:18:18 Characterization and aging effect study of nitrogen-doped ZnO nanofilm
DOI:10.1016/j.apsusc.2010.03.134 JN:APPLIED SURFACE SCIENCE PY:2010
TC:20 AU: Karamdel, Javad;Dee, C. F.;Majlis, Burhanuddin Yeop;
10:18:19 Dual codoping for the fabrication of low resistive p-ZnO
DOI:10.1016/j.jallcom.2011.09.072 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Balakrishnan, L.;Gowrishankar, S.;Premchander, P.;Gopalakrishnan, N.;
10:18:20 Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering
DOI:10.1016/j.materresbull.2013.12.026 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:5 AU: Jo, Young Dae;Hui, K. N.;Hui, K. S.;Cho, Y. R.;Kim, Kwang Ho;
10:18:21 An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires
DOI:10.1088/0957-4484/22/22/225602 JN:NANOTECHNOLOGY PY:2011
TC:18 AU: Wang, Fei;Seo, Jung-Hun;Bayerl, Dylan;Shi, Jian;Mi, Hongyi;Ma, Zhenqiang;Zhao, Deyin;Shuai, Yichen;Zhou, Weidong;Wang, Xudong;
10:18:22 Atomistic modeling of As diffusion in ZnO
DOI:10.1103/PhysRevB.85.064106 JN:PHYSICAL REVIEW B PY:2012
TC:12 AU: Puchala, B.;Morgan, D.;
10:18:23 Synthesis and characterization of Ag-doped p-type ZnO nanowires
DOI:10.1007/s00339-011-6390-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:11 AU: Wang, Guoping;Chu, Sheng;Zhan, Ning;Zhou, Huimei;Liu, Jianlin;
10:18:24 Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films
DOI:10.1063/1.3449122 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Kumar, E. Senthil;Venkatesh, S.;Rao, M. S. Ramachandra;
10:18:25 Effect of ammonia/zinc nitrate molar ratio on structural and optical properties of Al and Sb codoped ZnO nanorod ordered array thin films
DOI:10.1016/j.jallcom.2012.01.041 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Zhong, Wen-Wu;Liu, Fa-Min;Chen, Wei-Ping;
10:18:26 Fabrication of p-Type Li-Doped ZnO Films by RF Magnetron Sputtering
DOI:10.1111/j.1551-2916.2010.03636.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:10 AU: Chiu, Kuo-Chuang;Kao, Yi-Wen;Jean, Jau-Ho;
10:18:27 Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film
DOI:10.1016/j.tsf.2012.02.081 JN:THIN SOLID FILMS PY:2012
TC:20 AU: Dhara, Soumen;Giri, P. K.;
10:18:28 A Codoping Route to Realize Low Resistive and Stable p-Type Conduction in (Li, Ni):ZnO Thin Films Grown by Pulsed Laser Deposition
DOI:10.1021/am200197a JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:19 AU: Kumar, E. Senthil;Chatterjee, Jyotirmoy;Rama, N.;DasGupta, Nandita;Rao, M. S. Ramachandra;
10:18:29 Fabrication and characterization of magnetron sputtered arsenic doped p-type ZnO epitaxial thin films
DOI:10.1016/j.apsusc.2010.05.050 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Kumar, Amit;Kumar, Manoj;Singh, Beer Pal;
10:18:30 Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer
DOI:10.1016/j.apsusc.2010.12.122 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Zhao, Wang;Zhao, Long;Shi, Zhifeng;Xia, Xiaochuan;Li, Xiangping;Dong, Xin;Chang, Yuchun;Zhang, Baolin;Du, Guotong;
10:18:31 Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD
DOI:10.1016/j.materresbull.2012.12.035 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Ma, Y.;Gao, Q.;Wu, G. G.;Li, W. C.;Gao, F. B.;Yin, J. Z.;Zhang, B. L.;Du, G. T.;
10:18:32 Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors
DOI:10.1103/PhysRevB.83.085202 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Duan, X. M.;Stampfl, C.;Bilek, M. M. M.;McKenzie, D. R.;Wei, Su-Huai;
10:18:33 Hopping conduction in nitrogen doped ZnO in the temperature range 10-300 K
DOI:10.1063/1.3353862 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Majumdar, Sayanee;Banerji, P.;
10:18:34 Ultrasonic-Assisted Synthesis, Characterization, and Optical Properties of Sb Doped ZnO and Their Photocatalytic Activities
DOI:10.1155/2014/725817 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Phuruangrat, Anukorn;Kongpet, Waipawan;Yayapao, Oranuch;Kuntalue, Budsabong;Thongtem, Somchai;Thongtem, Titipun;
10:18:35 Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing
DOI:10.1016/j.tsf.2011.02.072 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Cheng, Yung-Chen;Kuo, Ying-Shen;Li, Yun-Hsiu;Shyue, Jing-Jong;Chen, Miin-Jang;
10:18:36 Fabrication and optimization process of p-type Li: ZnO oxide semiconductor
DOI:10.1016/j.tsf.2014.03.062 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Wu, Kuo-Hong;Peng, Li-Yi;Januar, Mochamad;Chiu, Kuo-Chuang;Liu, Kou-Chen;
10:18:37 Effect of growth time on the structure, Raman shift and photoluminescence of Al and Sb codoped ZnO nanorod ordered array thin films
DOI:10.1016/j.apsusc.2011.05.032 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Zhong, Wen-Wu;Liu, Fa-Min;Cai, Lu-Gang;Liu, Xue-Quan;Li, Yi;
10:18:38 Annealing effects on the p-type ZnO films fabricated on GaAs substrate by atmospheric pressure metal organic chemical vapor deposition
DOI:10.1016/j.jallcom.2010.10.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Huang, Yen-Chin;Weng, Li-Wei;Uen, Wu-Yih;Lan, Shan-Ming;Li, Zhen-Yu;Liao, Sen-Mao;Lin, Tai-Yuan;Yang, Tsun-Neng;
10:18:39 Nature of the AX center participating persistent photoconductivity effect in As-doped p-ZnO
DOI:10.1063/1.4817246 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Jeong, T. S.;Yu, J. H.;Mo, H. S.;Kim, T. S.;Youn, C. J.;Hong, K. J.;
10:18:40 Structural properties of P-doped ZnO
DOI:10.1016/j.matchemphys.2010.12.012 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:0 AU: Ngo Thu Huong;Nguyen Viet Tuyen;Nguyen Hoa Hong;
10:18:41 First-principles studies on the dominant acceptor and the activation mechanism of phosphorus-doped ZnO
DOI:10.1063/1.3638460 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Li, Ping;Deng, Sheng-Hua;Huang, Jing;
10:18:42 Structural, optical and electrical properties of Al-N codoped ZnO films by RF-assisted MOCVD method
DOI:10.1016/j.apsusc.2010.06.056 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Su, Jianfeng;Zang, Chunhe;Cheng, Chunxiao;Niu, Qiang;Zhang, Yongsheng;Yu, Ke;
10:18:43 Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films
DOI:10.1016/j.apsusc.2013.08.129 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Garcia Nunez, C.;Jimenez-Trillo, J.;Garcia Velez, M.;Piqueras, J.;Pau, J. L.;Coya, C.;Alvarez, A. L.;
10:18:44 Ab-initio studies on Li doping, Li-pairs, and complexes between Li and intrinsic defects in ZnO
DOI:10.1063/1.4729774 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Vidya, R.;Ravindran, P.;Fjellvag, H.;
10:18:45 Characteristic properties of Raman scattering and photoluminescence on ZnO crystals doped through phosphorous-ion implantation
DOI:10.1063/1.4864714 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Jeong, T. S.;Yu, J. H.;Mo, H. S.;Kim, T. S.;Lim, K. Y.;Youn, C. J.;Hong, K. J.;
10:18:46 Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method
DOI:10.1016/j.matchemphys.2013.09.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:3 AU: Hwang, Sung-Hwan;Moon, Kyeong-Ju;Lee, Tae Il;Lee, Woong;Myoung, Jae-Min;
10:18:47 The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods
DOI:10.1016/j.tsf.2010.02.009 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Ding, Meng;Yao, Bin;Zhao, Dongxu;Fang, Fang;Shen, Dezhen;Zhang, Zhenzhong;
10:18:48 Temperature dependent hopping conduction in lithium-doped zinc oxide in the range 10-300 K
DOI:10.1007/s00339-010-5788-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:3 AU: Majumdar, S.;Banerji, P.;
10:18:49 Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow
DOI:10.1016/j.apsusc.2010.01.035 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: Kim, Young Yi;Han, Won Suk;Cho, Hyung Koun;
10:18:50 Minority carrier transport in p-ZnO nanowires
DOI:10.1063/1.3530732 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Lin, Y.;Shatkhin, M.;Flitsiyan, E.;Chernyak, L.;Dashevsky, Z.;Chu, S.;Liu, J. L.;
10:18:51 Investigation of phosphorus and arsenic as dopants in polycrystalline thin films of zinc oxide
DOI:10.1063/1.4774219 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Ye, Zhi;Wong, Man;
10:18:52 Intrinsic p-type ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition
DOI:10.1116/1.3484138 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:3 AU: Huang, Yen-Chin;Li, Zhen-Yu;Weng, Li-Wei;Uen, Wu-Yih;Lan, Shan-Ming;Liao, Sen-Mao;Lin, Tai-Yuan;Huang, Yu-Hsiang;Chen, Jian-Wen;Yang, Tsun-Neng;
10:18:53 Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
DOI:10.1116/1.3525639 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:5 AU: Fan, J. C.;Zhu, C. Y.;Yang, B.;Fung, S.;Beling, C. D.;Brauer, G.;Anwand, W.;Grambole, D.;Skorupa, W.;Wong, K. S.;Zhong, Y. C.;Xie, Z.;Ling, C. C.;
10:18:54 Fabrication of n-Zn1-xGaxO/p-(ZnO)(1-x)(GaP)(x) thin films and homojunction
DOI:10.1016/j.mseb.2012.10.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:1 AU: Gowrishankar, S.;Balakrishnan, L.;Balasubramanian, T.;Gopalakrishnan, N.;
10:18:55 Transparent p/n diode device from a single zinc nitride sputtering target
DOI:10.1016/j.tsf.2011.06.072 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Kambilafka, V.;Kostopoulos, A.;Androulidaki, M.;Tsagaraki, K.;Modreanu, M.;Aperathitis, E.;
10:18:56 Effects of Processing Parameters on Electrical Properties of p-Type Li-Doped ZnO Films by DC Pulsed Sputtering
DOI:10.1111/j.1551-2916.2011.04624.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:3 AU: Chiu, Kuo-Chuang;Jean, Jau-Ho;
10:18:57 Nitrogen doped-ZnO/n-GaN heterojunctions
DOI:10.1063/1.3575178 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Chen, Xin Yi;Fang, Fang;Ng, Alan M. C.;Djurisic, Aleksandra B.;Cheah, Kok Wai;Ling, Chi Chung;Chan, Wai Kin;Fong, Patrick W. K.;Lui, Hsian Fei;Surya, Charles;
10:18:58 Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals
DOI:10.1007/s11664-014-3136-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:1 AU: Jeong, T. S.;Yu, J. H.;Mo, H. S.;Kim, T. S.;Lim, K. Y.;Youn, C. J.;Hong, K. J.;Kim, H. S.;
10:18:59 The use of arc-erosion as a patterning technique for transparent conductive materials
DOI:10.1016/j.tsf.2011.04.153 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Jimenez-Trillo, J.;Alvarez, A. L.;Coya, C.;Cespedes, E.;Espinosa, A.;
10:18:60 Atomistic modeling of As diffusion in ZnO (vol 85, 064106, 2012)
DOI:10.1103/PhysRevB.87.099901 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Puchala, Brian;Morgan, Dane;
10:18:61 Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study
DOI:10.1063/1.4788812 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Park, Yun Chang;Kim, Young Heon;Nahm, Ho-Hyun;Noh, Ji-Young;Kim, Yong-Sung;Kim, Joondong;Lee, Won Seok;Yang, Jun-Mo;Park, Jeonghee;
10:18:62 Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition
DOI:10.1016/j.apsusc.2010.02.001 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Chao, Liang-Chiun;Shih, Yu-Ren;Li, Yao-Kai;Chen, Jun-Wei;Wu, Jiun-De;Ho, Ching-Hwa;
10:18:63 Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires
DOI:10.1063/1.3633224 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Schwarz, C.;Flitsiyan, E.;Chernyak, L.;Casian, V.;Schneck, R.;Dashevsky, Z.;Chu, S.;Liu, J. L.;
10:18:64 Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications
DOI:10.1016/j.tsf.2010.03.169 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Rim, Y. S.;Kim, H. J.;Kim, K. H.;
10:18:65 Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth
DOI:10.1016/j.tsf.2010.06.005 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Lee, Chun-Yu;Huang, Jing-Shun;Hsu, Sheng-Hao;Su, Wei-Fang;Lin, Ching-Fuh;
10:18:66 Evidence of p-doping in ZnO films deposited on GaAs
DOI:10.1016/j.tsf.2009.12.026 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Nagar, S.;Chakrabarti, S.;
10:18:67 Enhanced light output of angled sidewall light-emitting diodes with reflective silver films
DOI:10.1016/j.tsf.2010.12.007 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Hui, K. N.;Hui, K. S.;Lee, Heesoo;Hwang, Dong-Hyun;Son, Young-Guk;
10:19:1 Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory
DOI:10.1021/ja204639y JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:52 AU: Burbano, Mario;Scanlon, David O.;Watson, Graeme W.;
10:19:2 On the possibility of p-type SnO2
DOI:10.1039/c2jm34352e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:27 AU: Scanlon, David O.;Watson, Graeme W.;
10:19:3 Understanding the p-type defect chemistry of CuCrO2
DOI:10.1039/c0jm03852k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:52 AU: Scanlon, David O.;Watson, Graeme W.;
10:19:4 Origin of the Bipolar Doping Behavior of SnO from X-ray Spectroscopy and Density Functional Theory
DOI:10.1021/cm401343a JN:CHEMISTRY OF MATERIALS PY:2013
TC:13 AU: Quackenbush, N. F.;Allen, J. P.;Scanlon, D. O.;Sallis, S.;Hewlett, J. A.;Nandur, A. S.;Chen, B.;Smith, K. E.;Weiland, C.;Fischer, D. A.;Woicik, J. C.;White, B. E.;Watson, G. W.;Piper, L. F. J.;
10:19:5 Defect engineering of BaSnO3 for high-performance transparent conducting oxide applications
DOI:10.1103/PhysRevB.87.161201 JN:PHYSICAL REVIEW B PY:2013
TC:9 AU: Scanlon, David O.;
10:19:6 Understanding the defect chemistry of tin monoxide
DOI:10.1039/c3tc31863j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:4 AU: Allen, Jeremy P.;Scanlon, David O.;Piper, Louis F. J.;Watson, Graeme W.;
10:19:7 Nature of the Band Gap and Origin of the Conductivity of PbO2 Revealed by Theory and Experiment
DOI:10.1103/PhysRevLett.107.246402 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:28 AU: Scanlon, David O.;Kehoe, Aoife B.;Watson, Graeme W.;Jones, Martin O.;David, William I. F.;Payne, David J.;Egdell, Russell G.;Edwards, Peter P.;Walsh, Aron;
10:19:8 Electronic structure of mixed-valence silver oxide AgO from hybrid density-functional theory
DOI:10.1103/PhysRevB.81.161103 JN:PHYSICAL REVIEW B PY:2010
TC:30 AU: Allen, Jeremy P.;Scanlon, David O.;Watson, Graeme W.;
10:19:9 Understanding doping anomalies in degenerate p-type semiconductor LaCuOSe
DOI:10.1039/c4tc00096j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Scanlon, David O.;Buckeridge, John;Catlow, C. Richard A.;Watson, Graeme W.;
10:19:10 Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides
DOI:10.1103/PhysRevB.85.081109 JN:PHYSICAL REVIEW B PY:2012
TC:36 AU: Varley, J. B.;Janotti, A.;Franchini, C.;Van de Walle, C. G.;
10:19:11 Double-hole-induced oxygen dimerization in transition metal oxides
DOI:10.1103/PhysRevB.89.014109 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Chen, Shiyou;Wang, Lin-Wang;
10:19:12 Band gap engineering of In2O3 by alloying with Tl2O3
DOI:10.1063/1.4860986 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Scanlon, David O.;Regoutz, Anna;Egdell, Russell G.;Morgan, David J.;Watson, Graeme W.;
10:19:13 Computational testing of trivalent dopants in CeO2 for improved high-kappa dielectric behaviour
DOI:10.1039/c2tc00385f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Keating, Patrick R. L.;Scanlon, David O.;Watson, Graeme W.;
10:19:14 Electronic structures of silver oxides
DOI:10.1103/PhysRevB.84.115141 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Allen, Jeremy P.;Scanlon, David O.;Watson, Graeme W.;
10:19:15 Uncovering the Complex Behavior of Hydrogen in Cu2O
DOI:10.1103/PhysRevLett.106.186403 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:17 AU: Scanlon, David O.;Watson, Graeme W.;
10:19:16 Group-V impurities in SnO2 from first-principles calculations
DOI:10.1103/PhysRevB.81.245216 JN:PHYSICAL REVIEW B PY:2010
TC:18 AU: Varley, J. B.;Janotti, A.;Van de Walle, C. G.;
10:19:17 The nature of electron lone pairs in BiVO4
DOI:10.1063/1.3593012 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Payne, D. J.;Robinson, M. D. M.;Egdell, R. G.;Walsh, A.;McNulty, J.;Smith, K. E.;Piper, L. F. J.;
10:19:18 Comment on "Intrinsic n-type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In2O3, SnO2, and ZnO"
DOI:10.1103/PhysRevLett.106.069601 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:14 AU: Lany, Stephan;Zunger, Alex;
10:19:19 Electronic structure and defect properties of B6O from hybrid functional and many-body perturbation theory calculations: A possible ambipolar transparent conductor
DOI:10.1103/PhysRevB.90.045205 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Varley, J. B.;Lordi, V.;Miglio, A.;Hautier, G.;
10:19:20 Nature of the band gap of Tl2O3
DOI:10.1103/PhysRevB.83.233202 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Kehoe, Aoife B.;Scanlon, David O.;Watson, Graeme W.;
10:19:21 Understanding conductivity in SrCu2O2: stability, geometry and electronic structure of intrinsic defects from first principles
DOI:10.1039/b921061j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:17 AU: Godinho, Kate G.;Carey, John J.;Morgan, Benjamin J.;Scanlon, David O.;Watson, Graeme W.;
10:19:22 Polymorphism of indium oxide: Materials physics of orthorhombic In2O3
DOI:10.1103/PhysRevB.88.161201 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Walsh, Aron;Scanlon, David O.;
10:19:23 Ambipolar doping in SnO
DOI:10.1063/1.4819068 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Varley, J. B.;Schleife, A.;Janotti, A.;Van de Walle, C. G.;
10:19:24 Understanding the stability of MnPO4
DOI:10.1039/c4ta00434e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Huang, Yiqing;Fang, Jin;Omenya, Fredrick;O'Shea, Martin;Chernova, Natasha A.;Zhang, Ruibo;Wang, Qi;Quackenbush, Nicholas F.;Piper, Louis F. J.;Scanlon, David O.;Whittingham, M. Stanley;
10:19:25 Comparison of the defective pyrochlore and ilmenite polymorphs of AgSbO3 using GGA and hybrid DFT
DOI:10.1103/PhysRevB.83.035207 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Allen, Jeremy P.;Nilsson, M. Kristin;Scanlon, David O.;Watson, Graeme W.;
10:19:26 Hole localization, migration, and the formation of peroxide anion in perovskite SrTiO3
DOI:10.1103/PhysRevB.90.035202 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Chen, Hungru;Umezawa, Naoto;
10:19:27 Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating
DOI:10.1063/1.3282526 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Wang, Liang;Matson, Dean W.;Polikarpov, Evgueni;Swensen, James S.;Bonham, Charles C.;Cosimbescu, Lelia;Berry, Joseph J.;Ginley, David S.;Gaspar, Daniel J.;Padmaperuma, Asanga B.;
10:19:28 Bandgap engineering of ZnSnP2 for high-efficiency solar cells
DOI:10.1063/1.4730375 JN:APPLIED PHYSICS LETTERS PY:2012
TC:25 AU: Scanlon, David O.;Walsh, Aron;
10:19:29 Comment on "Uncovering the Complex Behavior of Hydrogen in Cu2O" Reply
DOI:10.1103/PhysRevLett.108.219704 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:1 AU: Scanlon, David O.;Watson, Graeme W.;
10:19:30 Electron lone pair distortion facilitated metal-insulator transition in beta-Pb0.33V2O5 nanowires
DOI:10.1063/1.4875747 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Wangoh, L.;Marley, P. M.;Quackenbush, N. F.;Sallis, S.;Fischer, D. A.;Woicik, J. C.;Banerjee, S.;Piper, L. F. J.;
10:19:31 Limits to Doping of Wide Band Gap Semiconductors
DOI:10.1021/cm402237s JN:CHEMISTRY OF MATERIALS PY:2013
TC:6 AU: Walsh, Aron;Buckeridge, John;Catlow, C. Richard A.;Jackson, Adam J.;Keal, Thomas W.;Miskufova, Martina;Sherwood, Paul;Shevlin, Stephen A.;Watkins, Mathew B.;Woodley, Scott M.;Sokol, Alexey A.;
10:19:32 Comment on "Intrinsic n-type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In2O3, SnO2, and ZnO" Reply
DOI:10.1103/PhysRevLett.106.069602 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:5 AU: Agoston, Peter;Albe, Karsten;Nieminen, Risto M.;Puska, Martti J.;
10:19:33 Comment on "Uncovering the Complex Behavior of Hydrogen in Cu2O"
DOI:10.1103/PhysRevLett.108.219703 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:2 AU: Biswas, K.;Du, M. -H.;T-Thienprasert, J.;Limpijumnong, S.;Singh, D. J.;
10:19:34 Towards p-type conductivity in SnO2 nanocrystals through Li doping
DOI:10.1088/0957-4484/21/3/035708 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Chaparadza, Allen;Rananavare, Shankar B.;
10:19:35 Interband and polaronic excitations in YTiO3 from first principles
DOI:10.1103/PhysRevB.90.161102 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Himmetoglu, Burak;Janotti, Anderson;Bjaalie, Lars;de Walle, Chris G. Van;
10:19:36 Stability, geometry, and electronic structure of an alternative I-III-VI2 material, CuScS2: A hybrid density functional theory analysis
DOI:10.1063/1.3491179 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Scanlon, David O.;Watson, Graeme W.;
10:19:37 Uncovering the Complex Behavior of Hydrogen in Cu2O (vol 106, 186403, 2011)
DOI:10.1103/PhysRevLett.108.129901 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:1 AU: Scanlon, David O.;Watson, Graeme W.;
10:19:38 Behavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculations
DOI:10.1103/PhysRevB.83.024101 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Wagner, Philipp;Ewels, Christopher P.;Suarez-Martinez, Irene;Guiot, Vincent;Cox, Stephen F. J.;Lord, James S.;Briddon, Patrick R.;
10:19:39 Structures of Late Transition Metal Monoxides from Jahn-Teller Instabilities in the Rock Salt Lattice
DOI:10.1103/PhysRevLett.113.025505 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Derzsi, Mariana;Piekarz, Przemyslaw;Grochala, Wojciech;
10:19:40 Vibrational properties of SrCu2O2 studied via Density Functional Theory calculations and compared to Raman and infrared spectroscopy measurements
DOI:10.1016/j.tsf.2012.10.130 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Even, J.;Pedesseau, L.;Durand, O.;Modreanu, M.;Huyberechts, G.;Servet, B.;Chaix-Pluchery, O.;
10:20:1 Characteristics of electron beam evaporated nanocrystalline SnO2 thin films annealed in air
DOI:10.1016/j.apsusc.2009.10.047 JN:APPLIED SURFACE SCIENCE PY:2010
TC:39 AU: Khan, Abdul Faheem;Mehmood, Mazhar;Aslam, Muhammad;Ashraf, Muhammad;
10:20:2 Tailoring of textured transparent conductive SnO2:F thin films
DOI:10.1016/j.jallcom.2013.05.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Gao, Qian;Jiang, Hong;Li, Changjiu;Ma, Yanping;Li, Xiang;Ren, Zhaohui;Liu, Yong;Song, Chenlu;Han, Gaorong;
10:20:3 Microstructural and functional stability of large-scale SnO2:F thin film with micro-nano structure
DOI:10.1016/j.jallcom.2012.09.119 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:12 AU: Gao, Q.;Li, M.;Li, X.;Liu, Y.;Song, C. L.;Wang, J. X.;Liu, Q. Y.;Liu, J. B.;Han, G. R.;
10:20:4 Sensing properties of sprayed antimony doped tin oxide thin films: Solution molarity
DOI:10.1016/j.jallcom.2010.12.012 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:42 AU: Babar, A. R.;Shinde, S. S.;Moholkar, A. V.;Bhosale, C. H.;Kim, J. H.;Rajpure, K. Y.;
10:20:5 Detailed investigation of submicrometer-sized grains of chemically sprayed (Sn1-xAlx, O-2) (0 <= x <= 0.085) thin films
DOI:10.1016/j.jallcom.2012.02.128 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Benhaliliba, M.;Benouis, C. E.;Yakuphanoglu, F.;Tiburcio-Silver, A.;Aydin, C.;Hamzaoui, S.;Mouffak, Z.;
10:20:6 Aqueous Solution Processing of F-Doped SnO2 Transparent Conducting Oxide Films Using a Reactive Tin(II) Hydroxide Nitrate Nanoscale Cluster
DOI:10.1021/cm402424c JN:CHEMISTRY OF MATERIALS PY:2013
TC:6 AU: Nadarajah, Athavan;Carnes, Matthew E.;Kast, Matthew G.;Johnson, Darren W.;Boettcher, Shannon W.;
10:20:7 Physical properties of ultrasonic sprayed nanosized indium doped SnO2 films
DOI:10.1016/j.synthmet.2011.04.017 JN:SYNTHETIC METALS PY:2011
TC:14 AU: Benouis, C. E.;Benhaliliba, M.;Yakuphanoglu, F.;Tiburcio Silver, A.;Aida, M. S.;Sanchez Juarez, A.;
10:20:8 Structural and optical properties and photoluminescence mechanism of fluorine-doped SnO2 films during the annealing process
DOI:10.1016/j.actamat.2013.09.043 JN:ACTA MATERIALIA PY:2014
TC:0 AU: Yang, J. K.;Zhao, H. L.;Li, J.;Zhao, L. P.;Chen, J. J.;Yu, B.;
10:20:9 Conductivity enhancement of ZnO:F thin films by the deposition of SnO2:F over layers for optoelectronic applications
DOI:10.1016/j.mseb.2012.10.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:13 AU: Anandhi, R.;Ravichandran, K.;Mohan, R.;
10:20:10 The low resistive and transparent Al-doped SnO2 films: p-type conductivity, nanostructures and photoluminescence
DOI:10.1016/j.jallcom.2014.03.046 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:8 AU: Benouis, C. E.;Benhaliliba, M.;Mouffak, Z.;Avila-Garcia, A.;Tiburcio-Silver, A.;Lopez, M. Ortega;Trujillo, R. Romano;Ocak, Y. S.;
10:20:11 Roughness improvement of fluorine-doped tin oxide thin films by using different alcohol solvents
DOI:10.1016/j.jallcom.2014.05.135 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Shi, Xiang Lei;Wang, Jian Tao;Wang, Jian Nong;
10:20:12 Preparation of fluorine-doped tin oxide (SnO2:F) film on polyethylene terephthalate (PET) substrate
DOI:10.1016/j.matlet.2010.05.001 JN:MATERIALS LETTERS PY:2010
TC:18 AU: Huang, Xiaoming;Yu, Zhexun;Huang, Shuqing;Zhang, Quanxin;Li, Dongmei;Luo, Yanhong;Meng, Qingbo;
10:20:13 Studies on the structural and electrical properties of F-doped SnO2 film prepared by APCVD
DOI:10.1016/j.apsusc.2011.07.025 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Yang, Jingkai;Liu, Wenchang;Dong, Lizhong;Li, Yuanxun;Li, Chuan;Zhao, Hongli;
10:20:14 Electrical and dielectric properties of co-precipitated nanocrystalline tin oxide
DOI:10.1016/j.jallcom.2010.06.131 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:28 AU: Babar, A. R.;Shinde, S. S.;Moholkar, A. V.;Rajpure, K. Y.;
10:20:15 Facile synthesis of antimony-doped tin oxide nanoparticles by a polymer-pyrolysis method
DOI:10.1016/j.materresbull.2010.03.003 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:24 AU: Li, Yuan-Qing;Wang, Jian-Lei;Fu, Shao-Yun;Mei, Shi-Gang;Zhang, Jian-Min;Yong, Kang;
10:20:16 Structural mosaicity and electrical properties of pyrolytic SnO2:F thin films
DOI:10.1016/j.tsf.2013.01.020 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Garces, F. A.;Budini, N.;Koropecki, R. R.;Arce, R. D.;
10:20:17 Photovoltaic property dependence of dye-sensitized solar cells on sheet resistance of FTO substrate deposited via spray pyrolysis
DOI:10.1016/j.ceramint.2012.01.018 JN:CERAMICS INTERNATIONAL PY:2012
TC:11 AU: Noh, Suk In;Ahn, Hyo-Jin;Riu, Doh-Hyung;
10:20:18 Improved mechanical properties of SnO2T thin film by structural modification
DOI:10.1016/j.ceramint.2013.08.082 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Gao, Qian;Jiang, Hong;Li, Ming;Lu, Peng;Lai, Xinyu;Li, Xiang;Liu, Yong;Song, Chenlu;Han, Gaorong;
10:20:19 Structural and optoelectronic properties of antimony incorporated tin oxide thin films
DOI:10.1016/j.jallcom.2010.06.091 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:32 AU: Babar, A. R.;Shinde, S. S.;Moholkar, A. V.;Bhosale, C. H.;Kim, J. H.;Rajpure, K. Y.;
10:20:20 Effect of Sb doping on structural, electrical and optical properties of epitaxial SnO2 films grown on r-cut sapphire
DOI:10.1016/j.jallcom.2013.10.087 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Luan, Caina;Zhu, Zhen;Mi, Wei;Ma, Jin;
10:20:21 Electron scattering mechanisms in fluorine-doped SnO2 thin films
DOI:10.1063/1.4829672 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Rey, G.;Ternon, C.;Modreanu, M.;Mescot, X.;Consonni, V.;Bellet, D.;
10:20:22 Structural, electrical and optical properties of p-type transparent conducting SnO2:Al film derived from thermal diffusion of Al/SnO2/Al multilayer thin films
DOI:10.1016/j.actamat.2010.07.042 JN:ACTA MATERIALIA PY:2010
TC:26 AU: Zhao, J.;Zhao, X. J.;Ni, J. M.;Tao, H. Z.;
10:20:23 Structural, compositional and electrical properties of co-precipitated zinc stannate
DOI:10.1016/j.jallcom.2011.04.105 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Babara, A. R.;Kumbhar, S. B.;Shinde, S. S.;Moholkar, A. V.;Kim, J. H.;Rajpure, K. Y.;
10:20:24 Effects of heat treatment on the chemical states of O1s and Sn3d at the surface of SnOx:F films by APCVD
DOI:10.1016/j.matlet.2012.07.055 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Yang, Jingkai;Zhao, Hongli;Zhang, Fucheng;
10:20:25 Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature
DOI:10.1016/j.actamat.2012.09.006 JN:ACTA MATERIALIA PY:2013
TC:12 AU: Consonni, V.;Rey, G.;Roussel, H.;Doisneau, B.;Blanquet, E.;Bellet, D.;
10:20:26 Amorphous-nanocrystalline Al doped ZnO transparent conducting thin films
DOI:10.1016/j.jallcom.2012.01.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Diez-Betriu, X.;Jimenez-Rioboo, R.;Sanchez-Marcos, J.;Cespedes, E.;Espinosa, A.;de Andres, A.;
10:20:27 The role of electric field during spray deposition on fluorine doped tin oxide film
DOI:10.1016/j.jallcom.2013.11.130 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Kumar, Anuj;Swami, Sanjay Kumar;Dutta, Viresh;
10:20:28 Thickness effects on the texture development of fluorine-doped SnO2 thin films: The role of surface and strain energy
DOI:10.1063/1.3684543 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Consonni, V.;Rey, G.;Roussel, H.;Bellet, D.;
10:20:29 Evolution of element distribution at the interface of FTO/SiOxCy films with X-ray photoelectron spectroscopy
DOI:10.1016/j.matlet.2014.07.012 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Yang, J. K.;Zhang, F. C.;Chen, J. J.;Yu, B.;Gao, Y.;Zhao, M. J.;Liang, B.;Zhao, H. L.;
10:20:30 Enhanced preferential orientation and electrical property of fluorine-doped SnO2 thin films via barrier layer
DOI:10.1016/j.matlet.2014.02.016 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Gao, Qian;Li, Ming;Liu, Qiying;Wang, Yongji;Li, Xiang;Wei, Xiao;Song, Chenlu;Wang, Jianxun;Liu, Junbo;Shen, Ge;Han, Gaorong;
10:20:31 Fabrication of textured SnO2:F thin films by spray pyrolysis
DOI:10.1016/j.apsusc.2011.09.026 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Ren, Yang;Zhao, Gaoyang;Chen, Yuanqing;
10:20:32 Structural, optical and electrical properties of Cd-doped SnO2 thin films grown by RF reactive magnetron co-sputtering
DOI:10.1016/j.apsusc.2011.10.072 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: de Moure-Flores, F.;Quinones-Galvan, J. G.;Hernandez-Hernandez, A.;Guillen-Cervantes, A.;Santana-Aranda, M. A.;Olvera, M. de la L.;Melendez-Lira, M.;
10:20:33 Optical transitions and point defects in F:SnO2 films: Effect of annealing
DOI:10.1016/j.apsusc.2013.12.057 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: El Akkad, Fikry;Paulose, Tressia A. P.;
10:20:34 Physicochemical characterization of point defects in fluorine doped tin oxide films
DOI:10.1063/1.4736798 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: El Akkad, Fikry;Joseph, Sudeep;
10:20:35 Effect of substrate temperature on the crystal growth orientation of SnO2:F thin films spray-deposited on glass substrates
DOI:10.1016/j.jnoncrysol.2010.06.076 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:16 AU: Miao, Dengkui;Zhao, Qingnan;Wu, Shuo;Wang, Zhendong;Zhang, Xingliang;Zhao, Xiujian;
10:20:36 Fluorine-doped SnO2 thin films deposited on polymer substrate for flexible transparent electrodes
DOI:10.1016/j.tsf.2013.08.085 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Muthukumar, A.;Giusti, G.;Jouvert, M.;Consonni, V.;Bellet, D.;
10:20:37 Study of annealing effects upon the optical and electrical properties of SnO2:F/SiCxOy low emissivity coatings by spectroscopic ellipsometry
DOI:10.1016/j.tsf.2013.11.029 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Wang, Kangkai;Cheng, Bo;Wu, Bin;Defranoux, Christophe;Basa, Peter;Song, Chenlu;Han, Gaorong;Liu, Yong;
10:20:38 Fabrication of high transmittance and low sheet resistance dual ion doped tin oxide films and their application in dye-sensitized solar cells
DOI:10.1016/j.tsf.2014.08.038 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Lee, Kun-Mu;Shih, Kuang-Liang;Chiang, Chien-Hung;Suryanarayanan, Vembu;Wu, Chun-Guey;
10:20:39 Electrical, structural and surface properties of fluorine doped tin oxide films
DOI:10.1016/j.apsusc.2010.04.052 JN:APPLIED SURFACE SCIENCE PY:2010
TC:16 AU: Bilgin, V.;Akyuz, I.;Ketenci, E.;Kose, S.;Atay, F.;
10:20:40 Studies on morphological and electrical properties of Al incorporated combusted iron oxide
DOI:10.1016/j.jallcom.2010.12.185 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Shinde, S. S.;Bhosale, C. H.;Rajpure, K. Y.;
10:20:41 Optical characterization of SnO2:F films by spectroscopic ellipsometry
DOI:10.1016/j.jnoncrysol.2010.07.007 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:11 AU: Atay, F.;Bilgin, V.;Akyuz, I.;Ketenci, E.;Kose, S.;
10:20:42 Texture control of fluorine-doped tin oxide thin film
DOI:10.1016/j.tsf.2010.12.096 JN:THIN SOLID FILMS PY:2011
TC:17 AU: Kim, Chang-Yeoul;Riu, Doh-Hyung;
10:20:43 Influence of Si substrate preparation on surface chemistry and morphology of L-CVD SnO2 thin films studied by XPS and AFM
DOI:10.1016/j.apsusc.2010.03.093 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Kwoka, M.;Ottaviano, L.;Waczynska, N.;Santucci, S.;Szuber, J.;
10:20:44 Structural properties and x-ray photoelectron spectroscopic study of SnO2 nanoparticles
DOI:10.1016/j.matlet.2012.06.073 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Chenari, H. Mahmoudi;Weinhardt, L.;Lastra, N. S. Rodriguez;Ernst, M. A.;Reinert, F.;Golzan, M. M.;Hassanzadeh, A.;
10:20:45 Growth and characterization of thermally evaporated ATO nanowires
DOI:10.1016/j.tsf.2010.08.084 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Lee, Po-Sheng;Lin, Yu-Hung;Chang, Yee-Shyi;Wu, Jyh-Ming;Shih, Han C.;
10:20:46 Effect of glass tempering on microstructure and functional properties of SnO2:F thin film prepared by atmosphere pressure chemical vapor deposition
DOI:10.1016/j.tsf.2013.02.099 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Gao, Qian;Liu, Qiying;Li, Ming;Li, Xiang;Liu, Yong;Song, Chenlu;Wang, Jianxun;Liu, Junbo;Shen, Ge;Han, Gaorong;
10:20:47 Optical and structural characterization of SnO2:F/SiCxOy tandem thin films by spectroscopic ellipsometry
DOI:10.1016/j.tsf.2013.06.031 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Wang, Kangkai;Hua, Yuefang;Wang, Ju;Song, Chenlu;Jia, Shaohui;Han, Gaorong;Liu, Yong;
10:20:48 Pulsed direct current magnetron sputtered nanocrystalline tin oxide films
DOI:10.1016/j.apsusc.2012.05.112 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Sivasankar Reddy, A.;Figueiredo, N. M.;Cavaleiro, A.;
10:20:49 Microstructural investigation and SnO nanodefects in spray-pyrolyzed SnO2 thin films
DOI:10.1016/j.matlet.2011.05.071 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Thanachayanont, Chanchana;Yordsri, Visittapong;Boothroyd, Chris;
10:20:50 Synthesis and electrical resistivity analysis of ATO-coated talc
DOI:10.1016/j.powtec.2012.02.039 JN:POWDER TECHNOLOGY PY:2012
TC:8 AU: Wang, L. S.;Lu, H. F.;Hong, R. Y.;Feng, W. G.;
10:20:51 Competitive effects of film thickness and growth rate in spray pyrolytically deposited fluorine-doped tin dioxide films
DOI:10.1016/j.tsf.2010.02.020 JN:THIN SOLID FILMS PY:2010
TC:12 AU: Agashe, Chitra;Mahamuni, Shailaja;
10:20:52 An alternative fluorine precursor for the synthesis of SnO2:F by spray pyrolysis
DOI:10.1016/j.tsf.2011.09.016 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Arca, E.;Fleischer, K.;Shvets, I. V.;
10:20:53 Tuning Electrical Properties in Amorphous Zinc Tin Oxide Thin Films for Solution Processed Electronics
DOI:10.1021/am401003k JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Chandra, R. Devi;Rao, Manohar;Zhang, Keke;Prabhakar, Rajiv Ramanujam;Shi, Chen;Zhang, Jie;Mhaisalkar, Subodh G.;Mathews, Nripan;
10:20:54 Ellipsometric studies of optical properties of copper doped zinc oxide films on glass substrates
DOI:10.1016/j.jallcom.2011.12.141 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Kostruba, A.;Kulyk, B.;Turko, B.;
10:20:55 Preparation of ATO nanorods and electrical resistivity analysis
DOI:10.1016/j.matlet.2011.10.049 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Lu, H. F.;Hong, R. Y.;Wang, L. S.;Xie, H. D.;Zhao, S. Q.;
10:20:56 Sonochemical growth of SnO2 hollow nanostructures on cellulose acetate flexible substrates
DOI:10.1016/j.matlet.2014.04.174 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Goswami, Y. C.;Kumar, Vijay;Rajaram, P.;
10:20:57 Substrate temperature effect on structural, optical and electrical properties of vacuum evaporated SnO2 thin films
DOI:10.1016/j.mssp.2012.02.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Zadsar, Mehdi;Fallah, Hamid Reza;Mahmoodzadeh, Morteza Haji;Hassanzadeh, Ali;Varnamkhasti, Mohsen Ghasemi;
10:20:58 X-ray photoelectron spectroscopy and thermal desorption spectroscopy comparative studies of L-CVD SnO2 ultra thin films
DOI:10.1016/j.tsf.2011.04.185 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Kwoka, M.;Waczynska, N.;Koscielniak, P.;Sitarz, M.;Szuber, J.;
10:20:59 Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition
DOI:10.1016/j.tsf.2011.08.041 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Purwanto, Agus;Widiyandari, Hendri;Jumari, Arif;
10:20:60 Characterization and Phase Formation Study of ZnO: Sn Nanoparticles Synthesized by Co-precipitation Method
DOI:10.1080/10584587.2014.906281 JN:INTEGRATED FERROELECTRICS PY:2014
TC:2 AU: Noonuruk, R.;Mekprasart, W.;Supparattanasamai, T.;Kanyapan, T.;Techitdheera, W.;Pecharapa, W.;
10:20:61 Irregular Electrical Conduction Types in Tin Oxide Thin Films Induced by Nanoscale Phase Separation
DOI:10.1111/j.1551-2916.2011.04791.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:8 AU: Hwang, Sooyeon;Kim, Young Yi;Lee, Ju Ho;Seo, Dong Kyu;Lee, Jeong Yong;Cho, Hyung Koun;
10:20:62 Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation
DOI:10.1016/j.matchemphys.2014.08.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Kim, Chang-Yeoul;Riu, Doh-Hyung;
10:20:63 Electroless deposition of SnOx-Sb nanocoating in ordered titania pores for enhancing electrical conductivity
DOI:10.1016/j.scriptamat.2011.08.029 JN:SCRIPTA MATERIALIA PY:2011
TC:3 AU: Chen, Yong;Ni, Qing;Han, Weiqing;Wang, Lianjun;Kirk, Donald W.;Thorpe, Steven J.;
10:20:64 Studies on the residual stress of fluorine-doped SnO2 film deposited by chemical vapor deposition
DOI:10.1016/j.tsf.2012.04.032 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Yang, Jingkai;Zhao, Hongli;Chen, Qian;Liu, Shengbo;Sha, Hesong;Zhang, Fucheng;
10:20:65 Ellipsometric studies of optical properties of Er-doped ZnO thin films synthesized by sol-gel method
DOI:10.1016/j.tsf.2013.02.034 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Miao, Lei;Tanemura, Sakae;Zhao, Lili;Xiao, Xiudi;Zhang, Xiao Ting;
10:20:66 Evaluation of optical parameters and characterization of ultrasonically sprayed MgO films by spectroscopic ellipsometry
DOI:10.1016/j.apsusc.2012.11.089 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Kurtaran, S.;Akyuz, I.;Atay, F.;
10:20:67 The characterization of fluorine doped tin oxide films by Fourier Transformation Infrared spectrum
DOI:10.1016/j.matlet.2010.08.065 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Zhang, B.;Tian, Y.;Zhang, J. X.;Cai, W.;
10:20:68 Structure, electrical conductivity and Hall Effect of amorphous Al-C-N thin films
DOI:10.1016/j.tsf.2010.07.053 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Luo, Q. H.;Lu, Y. H.;Lou, Y. Z.;Wang, Y. B.;Yu, D. L.;
10:21:1 A Review of Mechanical and Electromechanical Properties of Piezoelectric Nanowires
DOI:10.1002/adma.201104810 JN:ADVANCED MATERIALS PY:2012
TC:72 AU: Espinosa, Horacio D.;Bernal, Rodrigo A.;Minary-Jolandan, Majid;
10:21:2 Giant Piezoelectric Size Effects in Zinc Oxide and Gallium Nitride Nanowires. A First Principles Investigation
DOI:10.1021/nl104004d JN:NANO LETTERS PY:2011
TC:87 AU: Agrawal, Ravi;Espinosa, Horacio D.;
10:21:3 Surface piezoelectricity: Size effects in nanostructures and the emergence of piezoelectricity in non-piezoelectric materials
DOI:10.1063/1.3660431 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:36 AU: Dai, Shuangxing;Gharbi, Mohamed;Sharma, Pradeep;Park, Harold S.;
10:21:4 Fundamental study of mechanical energy harvesting using piezoelectric nanostructures
DOI:10.1063/1.3462468 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:37 AU: Sun, Chengliang;Shi, Jian;Wang, Xudong;
10:21:5 Strain effect on ferroelectric behaviors of BaTiO3 nanowires: a molecular dynamics study
DOI:10.1088/0957-4484/21/1/015701 JN:NANOTECHNOLOGY PY:2010
TC:38 AU: Zhang, Yihui;Hong, Jiawang;Liu, Bin;Fang, Daining;
10:21:6 In situ observation of size-scale effects on the mechanical properties of ZnO nanowires
DOI:10.1088/0957-4484/22/26/265712 JN:NANOTECHNOLOGY PY:2011
TC:37 AU: Asthana, A.;Momeni, K.;Prasad, A.;Yap, Y. K.;Yassar, R. S.;
10:21:7 Individual GaN Nanowires Exhibit Strong Piezoelectricity in 3D
DOI:10.1021/nl204043y JN:NANO LETTERS PY:2012
TC:30 AU: Minary-Jolandan, Majid;Bernal, Rodrigo A.;Kujanishvili, Irma;Parpoil, Victor;Espinosa, Horacio D.;
10:21:8 Size- and temperature-dependent piezoelectric properties of gallium nitride nanowires
DOI:10.1016/j.scriptamat.2012.12.022 JN:SCRIPTA MATERIALIA PY:2013
TC:9 AU: Zhang, Jin;Wang, Chengyuan;Chowdhury, Rajib;Adhikari, Sondipon;
10:21:9 Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation
DOI:10.1021/nl103450e JN:NANO LETTERS PY:2011
TC:30 AU: Bernal, Rodrigo A.;Agrawal, Ravi;Peng, Bei;Bertness, Kristine A.;Sanford, Norman A.;Davydov, Albert V.;Espinosa, Horacio D.;
10:21:10 Finite size effect on the piezoelectric properties of ZnO nanobelts: A molecular dynamics approach
DOI:10.1016/j.actamat.2012.06.041 JN:ACTA MATERIALIA PY:2012
TC:17 AU: Momeni, K.;Odegard, Gregory M.;Yassar, Reza S.;
10:21:11 Small-scale effect on the piezoelectric potential of gallium nitride nanowires
DOI:10.1063/1.4885538 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zhang, Jin;
10:21:12 Vibrating piezoelectric nanofilms as sandwich nanoplates
DOI:10.1063/1.4709754 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Zhang, Jin;Wang, Chengyuan;
10:21:13 First-principles based multiscale model of piezoelectric nanowires with surface effects
DOI:10.1063/1.4773333 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:10 AU: Hoang, M. -T.;Yvonnet, J.;Mitrushchenkov, A.;Chambaud, G.;
10:21:14 Small-scale effect on the mechanical properties of metallic nanotubes
DOI:10.1063/1.4748975 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Zhang, Jin;Wang, Chengyuan;Chowdhury, Rajib;Adhikari, Sondipon;
10:21:15 Radially dependent effective piezoelectric coefficient and enhanced piezoelectric potential due to geometrical stress confinement in ZnO nanowires/nanotubes
DOI:10.1063/1.4731779 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Kim, S. M.;Sohn, J. I.;Kim, H. J.;Ku, J.;Park, Y. J.;Cha, S. N.;Kim, J. M.;
10:21:16 Piezoelectric effect of one-dimensional gear-shaped ZnO microwires
DOI:10.1016/j.apsusc.2014.05.124 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Yin, Bing;Qiu, Yu;Zhang, Heqiu;Lei, Jixue;Ji, Jiuyu;Li, Lipeng;Hu, Lizhong;
10:21:17 The vibrational and buckling behaviors of piezoelectric nanobeams with surface effects
DOI:10.1088/0957-4484/22/24/245703 JN:NANOTECHNOLOGY PY:2011
TC:55 AU: Yan, Z.;Jiang, L. Y.;
10:21:18 Surface effects in various bending-based test methods for measuring the elastic property of nanowires
DOI:10.1088/0957-4484/21/20/205702 JN:NANOTECHNOLOGY PY:2010
TC:26 AU: Zheng, Xiu-Peng;Cao, Yan-Ping;Li, Bo;Feng, Xi-Qiao;Wang, Gang-Feng;
10:21:19 Optimal Aspect Ratio of Zinc Oxide Nanowires for a Nanocomposite Electrical Generator
DOI:10.1166/jctn.2012.2262 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:7 AU: Momeni, K.;Mortazavi, S. M. Z.;
10:21:20 Nanocomposite electrical generator based on piezoelectric zinc oxide nanowires
DOI:10.1063/1.3517095 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Momeni, K.;Odegard, G. M.;Yassar, R. S.;
10:21:21 Surface elasticity effect on the size-dependent elastic property of nanowires
DOI:10.1063/1.3703671 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Yao, Haiyan;Yun, Guohong;Bai, Narsu;Li, Jiangang;
10:21:22 Effect of interface energy on effective dynamic properties of piezoelectric medium with randomly distributed piezoelectric nano-fibers
DOI:10.1063/1.4764869 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Fang, Xue-Qian;Liu, Jin-Xi;Huang, Ming-Juan;
10:21:23 Fracture and buckling of piezoelectric nanowires subject to an electric field
DOI:10.1063/1.4829277 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Zhang, Jin;Wang, Chengyuan;Adhikari, Sondipon;
10:21:24 A multiscale approach to nanocomposite electrical generators
DOI:10.1016/j.nanoen.2013.12.012 JN:NANO ENERGY PY:2014
TC:3 AU: Momeni, Kasra;
10:21:25 An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires
DOI:10.1088/0957-4484/22/10/105704 JN:NANOTECHNOLOGY PY:2011
TC:16 AU: Xu, Xin;Potie, Alexis;Songmuang, Rudeesun;Lee, Jae Woo;Bercu, Bogdan;Baron, Thierry;Salem, Bassem;Montes, Laurent;
10:21:26 Acoustic gain in piezoelectric semiconductors at epsilon-near-zero response
DOI:10.1103/PhysRevB.89.041201 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Willatzen, M.;Christensen, J.;
10:21:27 Dynamic effective property of piezoelectric composites with coated piezoelectric nano-fibers
DOI:10.1016/j.compscitech.2014.04.017 JN:COMPOSITES SCIENCE AND TECHNOLOGY PY:2014
TC:2 AU: Fang, Xue-Qian;Huang, Ming-Juan;Liu, Jin-Xi;Feng, Wen-Jie;
10:21:28 Wurtzite-to-tetragonal structure phase transformation and size effect in ZnO nanorods
DOI:10.1063/1.3277053 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Wang, J.;Xiao, P.;Zhou, M.;Wang, Z. R.;Ke, F. J.;
10:21:29 Piezoelectric constants for ZnO calculated using classical polarizable core-shell potentials
DOI:10.1088/0957-4484/21/44/445707 JN:NANOTECHNOLOGY PY:2010
TC:21 AU: Dai, Shuangxing;Dunn, Martin L.;Park, Harold S.;
10:21:30 Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale
DOI:10.1021/nl501986d JN:NANO LETTERS PY:2015
TC:0 AU: Dai, Sheng;Zhao, Jiong;He, Mo-rigen;Wang, Xiaoguang;Wan, Jingchun;Shan, Zhiwei;Zhu, Jing;
10:21:31 Frequency analysis of nanotubes with consideration of surface effects
DOI:10.1063/1.3332579 JN:APPLIED PHYSICS LETTERS PY:2010
TC:26 AU: Farshi, Behrooz;Assadi, Abbas;Alinia-ziazi, Ali;
10:21:32 Photopatternable nano-composite (SU-8/ZnO) thin films for piezo-electric applications
DOI:10.1063/1.4748575 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Kandpal, Manoj;Sharan, Chandrashekhar;Poddar, Pankaj;Prashanthi, K.;Apte, Prakash R.;Rao, V. Ramgopal;
10:21:33 Vibration characteristics of circular nanoplates
DOI:10.1063/1.3486514 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:22 AU: Assadi, Abbas;Farshi, Behrooz;
10:21:34 Piezoelectricity in wurtzite polar semiconductor nanowires: A theoretical study
DOI:10.1063/1.3603036 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Sen, Banani;Stroscio, Michael;Dutta, Mitra;
10:21:35 Elastic, anelastic, and piezoelectric coefficients of GaN
DOI:10.1063/1.3674271 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Nakamura, N.;Ogi, H.;Hirao, M.;
10:21:36 Size dependent dynamic analysis of nanoplates
DOI:10.1063/1.3437041 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:27 AU: Assadi, Abbas;Farshi, Behrooz;Alinia-Ziazi, Ali;
10:21:37 Piezoelectricity in zincblende polar semiconductor nanowires: A theoretical study
DOI:10.1063/1.3692604 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Sen, Banani;Stroscio, Michael;Dutta, Mitra;
10:21:38 Surface effects on the scattering of compressional waves by a piezoelectric nano-cylinder
DOI:10.1063/1.4885059 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhang, L. L.;Liu, J. X.;Fang, X. Q.;Nie, G. Q.;
10:21:39 Vibrational modes of GaN nanowires in the gigahertz range
DOI:10.1088/0957-4484/23/49/495709 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Johnson, W. L.;Kim, S. A.;Geiss, R.;Flannery, C. M.;Bertness, K. A.;Heyliger, P. R.;
10:21:40 Piezoelectric properties of zinc oxide nanowires: an ab initio study
DOI:10.1088/0957-4484/24/47/475401 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Korir, K. K.;Cicero, G.;Catellani, A.;
10:21:41 Surface/interface effect around a piezoelectric nano-particle in a polymer matrix under compressional waves
DOI:10.1063/1.3702780 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Fang, X. Q.;Yang, Q.;Liu, J. X.;Feng, W. J.;
10:21:42 Surface effects on frequency analysis of nanotubes using nonlocal Timoshenko beam theory
DOI:10.1063/1.3503853 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Lee, Haw-Long;Chang, Win-Jin;
10:21:43 Postbuckling analysis of nanowires with surface effects
DOI:10.1063/1.3562138 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Wang, Gang-Feng;Yang, Fan;
10:21:44 Effects of residual surface stress and surface elasticity on the nonlinear free vibration of nanoscale plates
DOI:10.1063/1.4733345 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Wang, K. F.;Wang, B. L.;
10:21:45 Towards an elastic model of wurtzite AlN nanowires
DOI:10.1088/0957-4484/21/25/255702 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Mitrushchenkov, A.;Chambaud, G.;Yvonnet, J.;He, Q-C;
10:21:46 Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes
DOI:10.1063/1.4770314 JN:AIP ADVANCES PY:2012
TC:2 AU: Kim, Seong Min;Kim, Hyeok;Nam, Youngmin;Kim, Sungjin;
10:21:47 Characterization of surface and nonlinear elasticity in wurtzite ZnO nanowires
DOI:10.1063/1.4729545 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Yvonnet, J.;Mitrushchenkov, A.;Chambaud, G.;He, Q. -C.;Gu, S. -T.;
10:21:48 Postbuckling behaviors of nanorods including the effects of nonlocal elasticity theory and surface stress
DOI:10.1063/1.4829896 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Thongyothee, Chawis;Chucheepsakul, Somchai;
10:21:49 Influence of Surface Energy on the Pull-in Instability of Electrostatic Nano-Switches
DOI:10.1166/jctn.2013.2841 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:4 AU: Yang, Fan;Wang, Gang-Feng;Long, Jian-Min;Wang, Bao-Lin;
10:21:50 Design of a bent beam electrothermal actuator for in situ tensile testing of ceramic nanostructures
DOI:10.1016/j.jeurceramsoc.2013.12.001 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2014
TC:0 AU: Pantano, Maria F.;Pugno, Nicola M.;
10:21:51 Influence of surface effects on the pull-in instability of NEMS electrostatic switches
DOI:10.1088/0957-4484/21/50/505708 JN:NANOTECHNOLOGY PY:2010
TC:23 AU: Ma, Jianming Bryan;Jiang, Liying;Asokanthan, Samuel F.;
10:21:52 Effect of electrostatic force on a piezoelectric nanobeam
DOI:10.1088/0964-1726/21/1/015001 JN:SMART MATERIALS & STRUCTURES PY:2012
TC:9 AU: Liang, Xu;Shen, Shengping;
10:21:53 Effects of electrostatic force on piezoelectric materials under high electric field: Impact on GaN-based nanoscale structures
DOI:10.1063/1.3524259 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Rivera, Carlos;
10:21:54 Selective growth of ZnO nanorods and their applications to ferroelectric nanorods
DOI:10.1063/1.4745042 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Fujisawa, Hironori;Imi, Yasunori;Nakashima, Seiji;Shimizu, Masaru;Kotaka, Yasutoshi;Honda, Koichiro;
10:21:55 Introducing Structural Approximation Method for Modeling Nanostructures
DOI:10.1166/jctn.2010.1377 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2010
TC:1 AU: Momeni, Kasra;Alasty, Aria;
10:22:1:1 Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal beta-Ga2O3 (010) substrates
DOI:10.1063/1.3674287 JN:APPLIED PHYSICS LETTERS PY:2012
TC:64 AU: Higashiwaki, Masataka;Sasaki, Kohei;Kuramata, Akito;Masui, Takekazu;Yamakoshi, Shigenobu;
10:22:1:2 Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on beta-Ga2O3 (010) substrates and temperature dependence of their device characteristics
DOI:10.1063/1.4821858 JN:APPLIED PHYSICS LETTERS PY:2013
TC:18 AU: Higashiwaki, Masataka;Sasaki, Kohei;Kamimura, Takafumi;Wong, Man Hoi;Krishnamurthy, Daivasigamani;Kuramata, Akito;Masui, Takekazu;Yamakoshi, Shigenobu;
10:22:1:3 On the bulk beta-Ga2O3 single crystals grown by the Czochralski method
DOI:10.1016/j.jcrysgro.2014.07.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:12 AU: Galazka, Zbigniew;Irmscher, Klaus;Uecker, Reinhard;Bertram, Rainer;Pietsch, Mike;Kwasniewski, Albert;Naumann, Martin;Schulz, Tobias;Schewski, Robert;Klimm, Detlef;Bickermann, Matthias;
10:22:1:4 Electrical properties of beta-Ga2O3 single crystals grown by the Czochralski method
DOI:10.1063/1.3642962 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Irmscher, K.;Galazka, Z.;Pietsch, M.;Uecker, R.;Fornari, R.;
10:22:1:5 Quasi-heteroepitaxial growth of beta-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy
DOI:10.1016/j.crysgro.2014.10.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:2 AU: Oshima, Yuichi;Villora, Encarnacion G.;Shimamura, Kiyoshi;
10:22:1:6 Wide bandgap engineering of (AlGa)(2)O-3 films
DOI:10.1063/1.4900522 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhang, Fabi;Saito, Katsuhiko;Tanaka, Tooru;Nishio, Mitsuhiro;Arita, Makoto;Guo, Qixin;
10:22:1:7 Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2013.11.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:14 AU: Zhang, F. B.;Saito, K.;Tanaka, T.;Nishio, M.;Guo, Q. X.;
10:22:1:8 Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films
DOI:10.1016/j.jcrysgro.2014.02.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:6 AU: Fujita, Shizuo;Kaneko, Kentaro;
10:22:1:9 Epitaxial growth of gamma-Ga2O3 films by mist chemical vapor deposition
DOI:10.1016/j.jcrysgro.2012.08.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Oshima, Takayoshi;Nakazono, Taishi;Mukai, Akira;Ohtomo, Akira;
10:22:1:10 Conducting Si-doped gamma-Ga2O3 epitaxial films grown by pulsed-laser deposition
DOI:10.1016/j.jcrysgro.2015.04.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Oshima, Takayoshi;Matsuyama, Keitaro;Yoshimatsu, Kohei;Ohtomo, Akira;
10:22:1:11 Correlation between blue luminescence intensity and resistivity in beta-Ga2O3 single crystals
DOI:10.1063/1.4816759 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Onuma, T.;Fujioka, S.;Yamaguchi, T.;Higashiwaki, M.;Sasaki, K.;Masui, T.;Honda, T.;
10:22:1:12 Thermal annealing impact on crystal quality of (GaIn)(2)O-3 alloys
DOI:10.1016/j.jallcom.2014.06.091 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Zhang, Fabi;Saito, Katsuhiko;Tanaka, Tooru;Nishio, Mitsuhiro;Guo, Qixin;
10:22:1:13 Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers
DOI:10.1016/j.jcrysgro.2012.11.065 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Suzuki, Norihiro;Kaneko, Kentaro;Fujita, Shizuo;
10:22:1:14 Epitaxial growth of Mn-doped gamma-Ga2O3 on spinel substrate
DOI:10.1557/jmr.2010.32 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:9 AU: Hayashi, Hiroyuki;Huang, Rong;Oba, Fumiyasu;Hirayama, Tsukasa;Tanaka, Isao;
10:22:1:15 MBE grown Ga2O3 and its power device applications
DOI:10.1016/j.jcrysgro.2013.02.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:16 AU: Sasaki, Kohei;Higashiwaki, Masataka;Kuramata, Akito;Masui, Takekazu;Yamakoshi, Shigenobu;
10:22:1:16 Room-temperature fabrication of highly oriented beta-Ga2O3 thin films by excimer laser annealing
DOI:10.1016/j.jcrysgro.2015.04.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Shiojiri, Daishi;Yamauchi, Ryosuke;Fukuda, Daiji;Tsuchimine, Nobuo;Kaneko, Satoru;Matsuda, Akifumi;Yoshimoto, Mamoru;
10:22:1:17 Oxygen-radical-assisted pulsed-laser deposition of beta-Ga2O3 and beta-(AlxGa1-x)(2)O-3 films
DOI:10.1016/j.jcrysgro.2015.05.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Wakabayashi, Ryo;Oshima, Takayoshi;Hattori, Mai;Sasaki, Kohei;Masui, Takekazu;Kuramata, Akito;Yamakoshi, Shigenobu;Yoshimatsu, Kohei;Ohtomo, Akira;
10:22:1:18 Growth of corundum-structured (InxGa1-x)(2)O-3 alloy thin films on sapphire substrates with buffer layers
DOI:10.1016/j.jcrysgro.2014.02.0.51 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Suzuki, Norihiro;Kaneko, Kentaro;Fujita, Shizuo;
10:22:1:19 Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on beta-Ga2O3 (010) substrates by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.02.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Sasaki, Kohei;Higashiwaki, Masataka;Kuramata, Akito;Masui, Takekazu;Yamakoshi, Shigenobu;
10:22:1:20 Synthesis of gamma-Ga2O3-Al2O3 solid solutions by spray pyrolysis method
DOI:10.1016/j.ceramint.2011.05.085 JN:CERAMICS INTERNATIONAL PY:2011
TC:1 AU: Watanabe, Tsunenori;Miki, Yoshihisa;Masuda, Takeo;Deguchi, Hiroshi;Kanai, Hiroyoshi;Hosokawa, Saburo;Wada, Kenji;Inoue, Masashi;
10:22:1:21 Growth and electrical properties of AlOx grown by mist chemical vapor deposition
DOI:10.1063/1.4798303 JN:AIP ADVANCES PY:2013
TC:6 AU: Kawaharamura, Toshiyuki;Uchida, Takayuki;Sanada, Masaru;Furuta, Mamoru;
10:22:1:22 Structural properties of Si-doped beta-Ga2O3 layers grown by MOVPE
DOI:10.1016/j.jcrysgro.2013.11.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Gogova, D.;Wagner, G.;Baldini, M.;Schmidbauer, M.;Irmscher, K.;Schewski, R.;Galazka, Z.;Albrecht, M.;Fornari, R.;
10:22:1:23 Band alignment and electrical properties of Al2O3/beta-Ga2O3 heterojunctions
DOI:10.1063/1.4876920 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kamimura, Takafumi;Sasaki, Kohei;Wong, Man Hoi;Krishnamurthy, Daivasigamani;Kuramata, Akito;Masui, Takekazu;Yamakoshi, Shigenobu;Higashiwaki, Masataka;
10:22:1:24 Polarized Raman spectra in beta-Ga2O3 single crystals
DOI:10.1016/j.jcrysgro.2013.12.061 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Onuma, T.;Fujioka, S.;Yamaguchi, T.;Itoh, Y.;Higashiwaki, M.;Sasaki, K.;Masui, T.;Honda, T.;
10:22:1:25 Synthesis of Gallium-Aluminum Dawsonites and their Crystal Structures
DOI:10.1111/j.1551-2916.2010.03968.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:4 AU: Watanabe, Tsunenori;Masuda, Takeo;Miki, Yoshihisa;Miyahara, Yuya;Jeon, Hyung-Joon;Hosokawa, Saburo;Kanai, Hiroyoshi;Deguchi, Hiroshi;Inoue, Masashi;
10:22:1:26 Site preference of cation vacancies in Mn-doped Ga2O3 with defective spinel structure
DOI:10.1063/1.4770363 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Hayashi, Hiroyuki;Huang, Rong;Oba, Fumiyasu;Hirayama, Tsukasa;Tanaka, Isao;
10:22:1:27 A generation/recombination model assisted with two trap centers in wide band-gap semiconductors
DOI:10.1063/1.4795114 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Yamaguchi, Ken;Kuwabara, Takuhito;Uda, Tsuyoshi;
10:22:2:1 Oxygen vacancies and donor impurities in beta-Ga2O3
DOI:10.1063/1.3499306 JN:APPLIED PHYSICS LETTERS PY:2010
TC:56 AU: Varley, J. B.;Weber, J. R.;Janotti, A.;Van de Walle, C. G.;
10:22:2:2 Structural and optical evolution of Ga2O3/glass thin films deposited by radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2014.03.038 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Choi, K. H.;Kang, H. C.;
10:22:2:3 Ab initio calculations on the defect structure of beta-Ga2O3
DOI:10.1103/PhysRevB.87.235206 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Zacherle, T.;Schmidt, P. C.;Martin, M.;
10:22:2:4 The electronic structure of beta-Ga2O3
DOI:10.1063/1.3521255 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Mohamed, M.;Janowitz, C.;Unger, I.;Manzke, R.;Galazka, Z.;Uecker, R.;Fornari, R.;Weber, J. R.;Varley, J. B.;Van de Walle, C. G.;
10:22:2:5 Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films
DOI:10.1063/1.4803802 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Rubio, E. J.;Ramana, C. V.;
10:22:2:6 Atomically resolved silicon donor states of beta-Ga2O3
DOI:10.1063/1.3578195 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Iwaya, K.;Shimizu, R.;Aida, H.;Hashizume, T.;Hitosugi, T.;
10:22:2:7 Band bending and surface defects in beta-Ga2O3
DOI:10.1063/1.4711014 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Lovejoy, T. C.;Chen, Renyu;Zheng, X.;Villora, E. G.;Shimamura, K.;Yoshikawa, H.;Yamashita, Y.;Ueda, S.;Kobayashi, K.;Dunham, S. T.;Ohuchi, F. S.;Olmstead, M. A.;
10:22:2:8 Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal beta-Ga2O3
DOI:10.1063/1.4729289 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Lovejoy, T. C.;Chen, Renyu;Yitamben, E. N.;Shutthanadan, V.;Heald, S. M.;Villora, E. G.;Shimamura, K.;Zheng, S.;Dunham, S. T.;Ohuchi, F. S.;Olmstead, M. A.;
10:22:2:9 Observation of momentum space semi-localization in Si-doped beta-Ga2O3
DOI:10.1063/1.4769109 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Richard, P.;Sato, T.;Souma, S.;Nakayama, K.;Liu, H. W.;Iwaya, K.;Hitosugi, T.;Aida, H.;Ding, H.;Takahashi, T.;
10:22:3:1 Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films
DOI:10.1016/j.mssp.2013.03.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Cheng, Yi;Liang, Hongwei;Liu, Yang;Xia, Xiaochuan;Shen, Rensheng;Song, Shiwei;Wu, Yunfeng;Du, Guotong;
10:22:3:2 Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates
DOI:10.1016/j.tsf.2012.02.027 JN:THIN SOLID FILMS PY:2012
TC:18 AU: Kong, Lingyi;Ma, Jin;Luan, Caina;Mi, Wei;Lv, Yu;
10:22:3:3 Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films
DOI:10.1063/1.4862186 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Ramana, C. V.;Rubio, E. J.;Barraza, C. D.;Gallardo, A. Miranda;McPeak, Samantha;Kotru, Sushma;Grant, J. T.;
10:22:3:4 Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition
DOI:10.1016/j.matchemphys.2012.01.060 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:9 AU: Ou, Sin-Liang;Wuu, Dong-Sing;Fu, Yu-Chuan;Liu, Shu-Ping;Horng, Ray-Hua;Liu, Lei;Feng, Zhe-Chuan;
10:22:3:5 Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)
DOI:10.1016/j.matlet.2013.05.101 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Mi, Wei;Luan, Caina;Li, Zhao;Zhao, Cansong;Xiao, Hongdi;Ma, Jin;
10:22:3:6 High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures
DOI:10.1063/1.4894643 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Thomas, Stuart R.;Adamopoulos, George;Lin, Yen-Hung;Faber, Hendrik;Sygellou, Labrini;Stratakis, Emmanuel;Pliatsikas, Nikos;Patsalas, Panos A.;Anthopoulos, Thomas D.;
10:22:3:7 Structural, morphological, FTIR and photoluminescence properties of gallium oxide thin films
DOI:10.1116/1.4868523 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Cheng, Yi;Chen, Jixiang;Yang, Kun;Wang, Yizhuo;Yin, Yan;Liang, Hongwei;Du, Guotong;
10:22:3:8 Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2012.06.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Mi, Wei;Ma, Jin;Zhu, Zhen;Luan, Caina;Lv, Yu;Xiao, Hongdi;
10:22:3:9 Thermal annealing effect on material characterizations of beta-Ga2O3 epilayer grown by metal organic chemical vapor deposition
DOI:10.1063/1.4773247 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Huang, Chiung-Yi;Horng, Ray-Hua;Wuu, Dong-Sing;Tu, Li-Wei;Kao, Hsiang-Shun;
10:22:3:10 beta-Ga2O3 growth by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.3294715 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:12 AU: Tsai, Min-Ying;Bierwagen, Oliver;White, Mark E.;Speck, James S.;
10:22:3:11 Growth of thin zirconium and zirconium oxides films on the n-GaN(0001) surface studied by XPS and LEED
DOI:10.1016/j.apsusc.2014.01.102 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Idczak, K.;Mazur, P.;Zuber, S.;Markowski, L.;Skiscim, M.;Bilinska, S.;
10:22:4:1 Plasma enhanced atomic layer deposition of Ga2O3 thin films
DOI:10.1039/c4ta05007j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Ramachandran, Ranjith K.;Dendooven, Jolien;Botterman, Jonas;Sree, Sreeprasanth Pulinthanathu;Poelman, Dirk;Martens, Johan A.;Poelman, Hilde;Detavernier, Christophe;
10:22:4:2 Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
DOI:10.1116/1.4870381 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:3 AU: Goldenberg, Eda;Ozgit-Akgun, Cagla;Biyikli, Necmi;Okyay, Ali Kemal;
10:22:4:3 Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
DOI:10.1116/1.4758782 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:6 AU: Donmez, Inci;Ozgit-Akgun, Cagla;Biyikli, Necmi;
10:22:4:4 Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
DOI:10.1116/1.4875935 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:2 AU: Altuntas, Halit;Donmez, Inci;Ozgit-Akgun, Cagla;Biyikli, Necmi;
10:22:4:5 Low temperature Ga2O3 atomic layer deposition using gallium tri-isopropoxide and water
DOI:10.1016/j.tsf.2013.03.066 JN:THIN SOLID FILMS PY:2013
TC:10 AU: Choi, Dong-won;Chung, Kwun-Bum;Park, Jin-Seong;
10:22:4:6 Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
DOI:10.1116/1.4874535 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Gergova, Rositsa;Butcher, Kenneth Scott Alexander;Binsted, Peter W.;Gogova, Daniela;
10:22:4:7 Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems
DOI:10.1080/14786435.2012.669074 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:1 AU: Grieseler, R.;Klaus, J.;Stubenrauch, M.;Tonisch, K.;Michael, S.;Pezoldt, J.;Schaaf, P.;
10:22:4:8 Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
DOI:10.1116/1.4765642 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:5 AU: Chalker, Paul R.;Marshall, Paul A.;Romani, Simon;Roberts, Joseph W.;Irvine, Stuart J. C.;Lamb, Daniel A.;Clayton, Andrew J.;Williams, Paul A.;
10:22:5:1 Heteroepitaxial growth of multidomain Ga2O3/sapphire(001) thin films deposited using radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2014.01.030 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Kang, H. C.;
10:22:5:2 Microstructure, surface morphology and optical properties of N-incorporated Ga2O3 thin films on sapphire substrates
DOI:10.1016/j.jallcom.2013.06.132 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Sun, Rui;Wang, Gui-Gen;Zhang, Hua-Yu;Han, Jie-Cai;Wang, Xin-Zhong;Cui, Lin;Kuang, Xu-Ping;Zhu, Can;Jin, Lei;
10:22:5:3 Crystal orientation of beta-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
DOI:10.1016/j.jcrysgro.2012.04.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:18 AU: Nakagomi, Shinji;Kokubun, Yoshihiro;
10:22:5:4 Fabrication and characteristics of N-doped beta-Ga2O3 nanowires
DOI:10.1007/s00339-009-5538-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:8 AU: Liu, L. L.;Li, M. K.;Yu, D. Q.;Zhang, J.;Zhang, H.;Qian, C.;Yang, Z.;
10:22:6:1 Schottky barrier height of Au on the transparent semiconducting oxide beta-Ga2O3
DOI:10.1063/1.4755770 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Mohamed, M.;Irmscher, K.;Janowitz, C.;Galazka, Z.;Manzke, R.;Fornari, R.;
10:22:6:2 Deep ultraviolet photodiodes based on beta-Ga2O3/SiC heterojunction
DOI:10.1063/1.4818620 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Nakagomi, Shinji;Momo, Toshihiro;Takahashi, Syuhei;Kokubun, Yoshihiro;
10:22:6:3 Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction
DOI:10.1063/1.4883649 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Imura, S.;Kikuchi, K.;Miyakawa, K.;Ohtake, H.;Kubota, M.;
10:22:7:1 Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity
DOI:10.1063/1.3309694 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: King, P. D. C.;McKenzie, I.;Veal, T. D.;
10:22:7:2 Spectroscopic identification of shallow muonium acceptors in Si0.06Ge0.94
DOI:10.1063/1.4896343 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Carroll, B. R.;Lichti, R. L.;Mengyan, P. W.;Baker, B. B.;Celebi, Y. G.;King, P. J. C.;Chow, K. H.;Yonenaga, I.;
10:22:7:3 Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing
DOI:10.1063/1.3567635 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Kim, Won-Kyung;Lee, Seunghun;Cho, Yong Chan;Koinuma, Hideomi;Jeong, Se-Young;Shin, Jong Moon;Cho, Chae Ryong;Bae, Jong-Seong;Kim, Tae-Young;Park, Sungkyun;
10:22:7:4 Muonium defect levels in Czochralski-grown silicon-germanium alloys
DOI:10.1103/PhysRevB.82.205205 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Carroll, B. R.;Lichti, R. L.;King, P. J. C.;Celebi, Y. G.;Yonenaga, I.;Chow, K. H.;
10:22:8:1 High-voltage field effect transistors with wide-bandgap beta-Ga2O3 nanomembranes
DOI:10.1063/1.4879800 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Hwang, Wan Sik;Verma, Amit;Peelaers, Hartwin;Protasenko, Vladimir;Rouvimov, Sergei;Xing, Huili (Grace);Seabaugh, Alan;Haensch, Wilfried;Van de Walle, Chris;Galazka, Zbigniew;Albrecht, Martin;Fornari, Roberto;Jena, Debdeep;
10:22:8:2 High-voltage field effect transistors with wide-bandgap beta-Ga2O3 nanomembranes (vol 104, 203111, 2014)
DOI:10.1063/1.4884096 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hwang, Wan Sik;Verma, Amit;Peelaers, Hartwin;Protasenko, Vladimir;Rouvimov, Sergei;Xing, Huili (Grace);Seabaugh, Alan;Haensch, Wilfried;Van de Walle, Chris;Galazka, Zbigniew;Albrecht, Martin;Fornari, Roberto;Jena, Debdeep;
10:22:9:1 Thermodynamic study of beta-Ga2O3 growth by halide vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2014.06.051 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Nomura, Kazushiro;Goto, Ken;Togashi, Rie;Murakami, Hisashi;Kumagai, Yoshinao;Kuramata, Akito;Yamakoshi, Shigenobu;Koukitu, Akinori;
10:22:9:2 Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases
DOI:10.1016/j.jcrysgro.2010.05.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Masuda, Rui;Fujii, Tetsuo;Yoshii, Naoki;Kumagai, Yoshinao;Koukitu, Akinori;
10:22:9:3 Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments
DOI:10.1016/j.jcrysgro.2010.11.097 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Fujii, Tetsuo;Yoshii, Naoki;Kumagai, Yoshinao;Koukitu, Akinori;
10:22:10:1 Optical and structural properties of Cu-doped beta-Ga2O3 films
DOI:10.1016/j.mseb.2011.04.014 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:20 AU: Zhang, Yijun;Yan, Jinliang;Li, Qingshan;Qu, Chong;Zhang, Liying;Xie, Wanfeng;
10:22:10:2 Structural, optical, and opto-dielectric properties of W-doped Ga2O3 thin films
DOI:10.1007/s10853-011-6134-z JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:2 AU: Dakhel, A. A.;
10:23:1 Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates
DOI:10.1063/1.3459139 JN:APPLIED PHYSICS LETTERS PY:2010
TC:97 AU: Nakahara, K.;Akasaka, S.;Yuji, H.;Tamura, K.;Fujii, T.;Nishimoto, Y.;Takamizu, D.;Sasaki, A.;Tanabe, T.;Takasu, H.;Amaike, H.;Onuma, T.;Chichibu, S. F.;Tsukazaki, A.;Ohtomo, A.;Kawasaki, M.;
10:23:2 Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain
DOI:10.1063/1.3563705 JN:APPLIED PHYSICS LETTERS PY:2011
TC:37 AU: Hou, Y. N.;Mei, Z. X.;Liu, Z. L.;Zhang, T. C.;Du, X. L.;
10:23:3 Defect controlled ultra high ultraviolet photocurrent gain in Cu-doped ZnO nanorod arrays: De-trapping yield
DOI:10.1063/1.4816444 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Sarkar, Sanjit;Basak, Durga;
10:23:4 Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates
DOI:10.1016/j.jallcom.2012.10.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Wei, M.;Boutwell, R. C.;Garrett, G. A.;Goodman, K.;Rotella, P.;Wraback, M.;Schoenfeld, W. V.;
10:23:5 High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
DOI:10.1063/1.3340945 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Tabares, G.;Hierro, A.;Ulloa, J. M.;Guzman, A.;Munoz, E.;Nakamura, A.;Hayashi, T.;Temmyo, J.;
10:23:6 Growth of high quality ZnO thin films with a homonucleation on sapphire
DOI:10.1116/1.4813918 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Wei, Ming;Boutwell, Ryan Casey;Faleev, Nikolai;Osinsky, Andrei;Schoenfeld, Winston V.;
10:23:7 Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures
DOI:10.1063/1.3600789 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Hou, Y. N.;Mei, Z. X.;Liang, H. L.;Ye, D. Q.;Liang, S.;Gu, C. Z.;Du, X. L.;
10:23:8 Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices
DOI:10.1063/1.3662974 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Srour, H.;Salvestrini, J. P.;Ahaitouf, A.;Gautier, S.;Moudakir, T.;Assouar, B.;Abarkan, M.;Hamady, S.;Ougazzaden, A.;
10:23:9 Deep-ultraviolet light-emitting device realized via a hole-multiplication process
DOI:10.1063/1.3637575 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Zhu, H.;Shan, C. X.;Li, B. H.;Zhang, Z. Z.;Yao, B.;Shen, D. Z.;
10:23:10 Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
DOI:10.1063/1.3595342 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Liang, H. L.;Mei, Z. X.;Zhang, Q. H.;Gu, L.;Liang, S.;Hou, Y. N.;Ye, D. Q.;Gu, C. Z.;Yu, R. C.;Du, X. L.;
10:23:11 Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction
DOI:10.1063/1.4746772 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Xie, X. H.;Zhang, Z. Z.;Shan, C. X.;Chen, H. Y.;Shen, D. Z.;
10:23:12 Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer
DOI:10.1063/1.4811153 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Xie, X. H.;Zhang, Z. Z.;Li, B. H.;Wang, S. P.;Jiang, M. M.;Shan, C. X.;Zhao, D. X.;Chen, H. Y.;Shen, D. Z.;
10:23:13 Dual-band MgZnO ultraviolet photodetector integrated with Si
DOI:10.1063/1.4802486 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Hou, Y. N.;Mei, Z. X.;Liang, H. L.;Ye, D. Q.;Gu, C. Z.;Du, X. L.;
10:23:14 Effects of rapid thermal annealing on properties of Ga-doped MgxZn1-xO films and Ga-doped MgxZn1-xO/AlGaN heterojunction diodes
DOI:10.1063/1.4892591 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Hsueh, Kuang-Po;Cheng, Po-Wei;
10:23:15 Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film
DOI:10.1063/1.3670334 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Han, Shun;Zhang, Zhenzhong;Zhang, Jiying;Wang, Likun;Zheng, Jian;Zhao, Haifeng;Zhang, Yechi;Jiang, Mingming;Wang, Shuangpeng;Zhao, Dongxu;Shan, ChongXin;Li, Binghui;Shen, Dezhen;
10:23:16 Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures
DOI:10.1063/1.3628338 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Zhang, Zhipeng;von Wenckstern, Holger;Schmidt, Matthias;Grundmann, Marius;
10:23:17 MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates
DOI:10.1063/1.3596479 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Zheng, Qinghong;Huang, Feng;Ding, Kai;Huang, Jin;Chen, Dagui;Zhan, Zhibing;Lin, Zhang;
10:23:18 High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film
DOI:10.1063/1.4889914 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Fan, M. M.;Liu, K. W.;Zhang, Z. Z.;Li, B. H.;Chen, X.;Zhao, D. X.;Shan, C. X.;Shen, D. Z.;
10:23:19 High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons
DOI:10.1063/1.4862789 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Ni, Pei-Nan;Shan, Chong-Xin;Li, Bing-Hui;Shen, De-Zhen;
10:23:20 Influence of Zn/O ratio on structural, electrical and optical properties of ZnO thin films fabricated by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jallcom.2010.04.220 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:16 AU: Zhang, Bingye;Yao, Bin;Wang, Shuangpeng;Li, Yongfeng;Shan, Chongxin;Zhang, Jiying;Li, Binghui;Zhang, Zhenzhong;Shen, Dezhen;
10:23:21 Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
DOI:10.1063/1.4769874 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Gur, Emre;Tabares, G.;Arehart, A.;Chauveau, J. M.;Hierro, A.;Ringel, S. A.;
10:23:22 Monolithic color-selective ultraviolet (266-315 nm) photodetector based on a wurtzite MgxZn1-xO film
DOI:10.1063/1.4897300 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hou, Y. N.;Mei, Z. X.;Liang, H. L.;Gu, C. Z.;Du, X. L.;
10:23:23 High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction
DOI:10.1063/1.4893591 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Su, Longxing;Zhang, Quanlin;Wu, Tianzhun;Chen, Mingming;Su, Yuquan;Zhu, Yuan;Xiang, Rong;Gui, Xuchun;Tang, Zikang;
10:23:24 Bias-Polarity Dependent Ultraviolet/Visible Switchable Light-Emitting Devices
DOI:10.1021/am5010283 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Ni, Pei-Nan;Shan, Chong-Xin;Li, Bing-Hui;Wang, Shuang-Peng;Shen, De-Zhen;
10:23:25 Epitaxial growth of high quality cubic MgZnO films on MgO substrate
DOI:10.1016/j.jcrysgro.2010.01.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Wang, L. K.;Ju, Z. G.;Shan, C. X.;Zheng, J.;Li, B. H.;Zhang, Z. Z.;Yao, B.;Zhao, D. X.;Shen, D. Z.;Zhang, J. Y.;
10:23:26 Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films
DOI:10.1063/1.3604782 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Wei, M.;Boutwell, R. C.;Mares, J. W.;Scheurer, A.;Schoenfeld, W. V.;
10:23:27 The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy
DOI:10.1063/1.4815995 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Boutwell, R. Casey;Wei, Ming;Schoenfeld, Winston V.;
10:23:28 Wide Range Bandgap Modulation Based on ZnO-based Alloys and Fabrication of Solar Blind UV Detectors with High Rejection Ratio
DOI:10.1021/am503427u JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Su, Longxing;Zhu, Yuan;Yong, Dingyu;Chen, Mingming;Ji, Xu;Su, Yuquan;Gui, Xuchun;Pan, Bicai;Xiang, Rong;Tang, Zikang;
10:23:29 Surface morphologies of homoepitaxial ZnO thin films on non-miscut ZnO substrates
DOI:10.1016/j.apsusc.2013.04.037 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Wei, M.;Boutwell, R. C.;Schoenfeld, W. V.;
10:23:30 Effect of oxygen pressure on preferred deposition orientations and optical properties of cubic MgZnO thin films on amorphous quartz substrate
DOI:10.1016/j.jallcom.2013.01.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Han, S.;Shao, Y. K.;Lu, Y. M.;Cao, P. J.;Jia, F.;Zeng, Y. X.;Liu, W. J.;Zhu, D. L.;Ma, X. C.;
10:23:31 Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire
DOI:10.1016/j.jcrysgro.2011.04.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Chu, Sheng;Morshed, Muhammad;Li, Lin;Huang, Jian;Liu, Jianlin;
10:23:32 Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O
DOI:10.1063/1.4826596 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Zhang, Zhipeng;von Wenckstern, Holger;Grundmann, Marius;
10:23:33 Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer
DOI:10.1021/am100249a JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:14 AU: Han, Shun;Zhang, Jiying;Zhang, Zhenzhong;Zhao, Yanmin;Wang, Likun;Zheng, Jian;Yao, Bin;Zhao, Dongxu;Shen, Dezhen;
10:23:34 Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy
DOI:10.1016/j.jallcom.2013.09.064 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Boutwell, R. Casey;Wei, M.;Baudelet, Matthieu;Schoenfeld, Winston V.;
10:23:35 Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors
DOI:10.1016/j.jcrysgro.2013.07.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:5 AU: Liang, H. L.;Mei, Z. X.;Hou, Y. N.;Liang, S.;Liu, Z. L.;Liu, Y. P.;Li, J. Q.;Du, X. L.;
10:23:36 Epitaxial growth of cubic Mg0.45Zn0.55O thin films on SrTiO3 (001) substrate with MgO buffer layer
DOI:10.1016/j.jcrysgro.2013.05.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Zhu, Dapeng;Cai, Li;He, Shumin;Liu, Guolei;Yan, Shishen;Cao, Qiang;Chen, Yanxue;Kang, Shishou;Mei, Liangmo;Gao, Shang;Lian, Jie;
10:23:37 Effect of different migration energy for reaction atoms on growth orientation and optical absorption characteristics of cubic MgZnO thin films under different pressure by PLD method
DOI:10.1016/j.jcrysgro.2014.09.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Han, Shun;Shao, Yukun;Lu, Youming;Cao, Peijiang;Liu, Wenjun;Zeng, Yuxiang;Jia, Fang;Zhu, Deliang;Ma, Xiaocui;
10:23:38 The effect of substrate temperature and source flux on cubic ZnMgO UV sensors grown by plasma-enhanced molecular beam epitaxy
DOI:10.1016/j.apsusc.2013.07.090 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Boutwell, R. Casey;Wei, Ming;Schoenfeld, Winston V.;
10:23:39 Growth mechanism of ZnO low-temperature homoepitaxy
DOI:10.1063/1.3630030 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Park, S. H.;Minegishi, T.;Lee, H. J.;Oh, D. C.;Ko, H. J.;Chang, J. H.;Yao, T.;
10:23:40 Cubic ZnxMg1-xO thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications
DOI:10.1557/JMR.2010.0150 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:5 AU: Mares, J. W.;Boutwell, R. C.;Scheurer, A.;Schoenfeld, W. V.;
10:23:41 Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature
DOI:10.1016/j.matlet.2013.01.090 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Wei, M.;Boutwell, R. C.;Garrett, G. A.;Goodman, K.;Rotella, P.;Schoenfeld, W. V.;
10:23:42 High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
DOI:10.1063/1.3595303 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Martens, M.;Schlegel, J.;Vogt, P.;Brunner, F.;Lossy, R.;Wuerfl, J.;Weyers, M.;Kneissl, M.;
10:23:43 Deep-ultraviolet light-emitting diodes with gradually increased thicknesses from n-layers to p-layers
DOI:10.1063/1.3567786 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Tsai, Miao-Chan;Yen, Sheng-Horng;Kuo, Yen-Kuang;
10:23:44 Next-generation hydrothermal ZnO crystals
DOI:10.1016/j.jcrysgro.2011.01.005 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Ehrentraut, Dirk;Maeda, Katsumi;Kano, Masataka;Fujii, Katsushi;Fukuda, Tsuguo;
10:23:45 Degenerated MgZnO films obtained by excessive zinc
DOI:10.1016/j.jcrysgro.2012.03.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Liu, J. S.;Shan, C. X.;Wang, S. P.;Li, B. H.;Zhang, Z. Z.;Shen, D. Z.;
10:23:46 Growth of single-phase Mg0.3Zn0.7O films suitable for solar-blind optical devices on RS-MgO substrates
DOI:10.1016/j.tsf.2011.08.019 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Liang, H. L.;Mei, Z. X.;Liu, Z. L.;Guo, Y.;Azarov, A. Yu.;Kuznetsov, A. Yu.;Hallen, A.;Du, X. L.;
10:23:47 Rock-salt Zn1-xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.053 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Lu, C. -Y. J.;Yan, T.;Chang, L.;Ploog, K. H.;Chou, M. M. C.;Chiang, C. -M.;
10:23:48 Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.05.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Adolph, David;Tingberg, Tobias;Lye, Tommy;
10:23:49 The E3 Defect in Mg (x) Zn1-x O
DOI:10.1007/s11664-009-0967-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:2 AU: von Wenckstern, H.;Brachwitz, K.;Schmidt, M.;Dietrich, C. P.;Ellguth, M.;Stoelzel, M.;Lorenz, M.;Grundmann, M.;
10:23:50 Effects of thermal treatment on the MgxZn1-xO films and fabrication of visible-blind and solar-blind ultraviolet photodetectors
DOI:10.1016/j.materresbull.2014.08.021 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Tian, Chunguang;Jiang, Dayong;Tan, Zhendong;Duan, Qian;Liu, Rusheng;Sun, Long;Qin, Jieming;Hou, Jianhua;Gao, Shang;Liang, Qingcheng;Zhao, Jianxun;
10:23:51 A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN
DOI:10.1063/1.4789977 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Aoyagi, Y.;Kurose, N.;
10:23:52 High p-type conduction in high-Al content Mg-doped AlGaN
DOI:10.1063/1.4773594 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Kinoshita, Toru;Obata, Toshiyuki;Yanagi, Hiroyuki;Inoue, Shin-ichiro;
10:23:53 Nucleation and epitaxial growth of ZnO on GaN(0 0 0 1)
DOI:10.1016/j.apsusc.2014.04.051 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Adolph, David;Ive, Tommy;
10:23:54 Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire
DOI:10.1016/j.jcrysgro.2010.12.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Petukhov, Vladimir;Bakin, Andrey;Tsiaoussis, Ioannis;Rothman, Johan;Ivanov, Sergey;Stoemenos, John;Waag, Andreas;
10:23:55 Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells
DOI:10.1007/s11664-009-0973-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:1 AU: Polyakov, A. Y.;Smirnov, N. B.;Govorkov, A. V.;Kozhukhova, E. A.;Belogorokhov, A. I.;Norton, D. P.;Kim, H. S.;Pearton, S. J.;
10:23:56 Influences of deposition temperature on characteristics of B-doped ZnO films deposited by metal-organic chemical vapor deposition
DOI:10.1016/j.tsf.2013.11.137 JN:THIN SOLID FILMS PY:2014
TC:7 AU: Maejima, K.;Koida, T.;Sai, H.;Matsui, T.;Saito, K.;Kondo, M.;Takagawa, T.;
10:24:1 Stabilizing intrinsic defects in SnO2
DOI:10.1103/PhysRevB.87.205205 JN:PHYSICAL REVIEW B PY:2013
TC:9 AU: Rahman, Gul;Din, Naseem Ud;Garcia-Suarez, Victor M.;Kan, Erjun;
10:24:2 Oxygen-vacancy-induced ferromagnetism in undoped SnO2 thin films
DOI:10.1103/PhysRevB.85.165319 JN:PHYSICAL REVIEW B PY:2012
TC:29 AU: Chang, G. S.;Forrest, J.;Kurmaev, E. Z.;Morozovska, A. N.;Glinchuk, M. D.;McLeod, J. A.;Moewes, A.;Surkova, T. P.;Nguyen Hoa Hong;
10:24:3 Magnetic stability of SnO2 nanosheets
DOI:10.1088/0957-4484/23/7/075704 JN:NANOTECHNOLOGY PY:2012
TC:23 AU: Wang, Cen;Wu, Q.;Ge, H. L.;Shang, Tao;Jiang, J. Z.;
10:24:4 Room-temperature ferromagnetism properties of Cu-doped SnO2 nanowires
DOI:10.1063/1.3273497 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:29 AU: Li, Lijun;Yu, Ke;Tang, Zheng;Zhu, Ziqiang;Wan, Qing;
10:24:5 First-principles study of the magnetic properties of Zn-doped SnO2
DOI:10.1016/j.mssp.2013.01.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Shi, Li-Bin;Qi, Guo-Quan;Dong, Hai-Kuan;
10:24:6 Surface-induced magnetism in C-doped SnO2
DOI:10.1063/1.3302468 JN:APPLIED PHYSICS LETTERS PY:2010
TC:31 AU: Rahman, Gul;Garcia-Suarez, Victor M.;
10:24:7 Ferromagnetism in C-doped SnO2 thin films
DOI:10.1063/1.3617439 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Nguyen Hoa Hong;Song, J. -H.;Raghavender, A. T.;Asaeda, T.;Kurisu, M.;
10:24:8 Origin of ferromagnetism in Cu-doped SnO2: A first-principles study
DOI:10.1063/1.4790425 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:14 AU: Zhang, Kai-Cheng;Liu, Yong;Li, Yong-Feng;Zhu, Yan;
10:24:9 Density functional theory description of origin of ferromagnetism in Cu doped SnO2
DOI:10.1016/j.jmmm.2013.06.052 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:3 AU: Shi, Li-Bin;Dong, Hai-Kuan;Qi, Guo-Quan;
10:24:10 Room-temperature ferromagnetism in epitaxial Mg-doped SnO2 thin films
DOI:10.1063/1.4711220 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Wu, Ping;Zhou, Baozeng;Zhou, Wei;
10:24:11 Band gap widening and d(0) ferromagnetism in epitaxial Li-doped Sno(2) films
DOI:10.1016/j.apsusc.2014.06.144 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Wang, Jianchun;Zhou, Wei;Wu, Ping;
10:24:12 Density functional study of magnetic properties in Zn-doped SnO2
DOI:10.1063/1.3503224 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:19 AU: Wei, Wei;Dai, Ying;Guo, Meng;Lai, Kangrong;Huang, Baibiao;
10:24:13 Structural and optical properties of Cu doped SnO2 nanoparticles: An experimental and density functional study
DOI:10.1063/1.4811374 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:13 AU: Chetri, Pawan;Saikia, Bhamyarswa;Choudhury, Amarjyoti;
10:24:14 Effects of Fe doping and Fe-N-codoping on magnetic properties of SnO2 prepared by chemical co-precipitation
DOI:10.1016/j.jmmm.2010.12.018 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:16 AU: Ghosh, S.;Mandal, M.;Mandal, K.;
10:24:15 Magnetism of Zn-doped SnO2: Role of surfaces
DOI:10.1063/1.4859995 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Pushpa, Raghani;Ramanujam, Balaji;
10:24:16 First-principles study of ferromagnetism in Zn- and Cd-doped SnO2
DOI:10.1016/j.jmmm.2011.12.034 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Yang, Hui;Han, Ruilin;Yan, Yu;Du, Xiaobo;Zhan, Qing;Jin, Hanmin;
10:24:17 Intrinsic magnetism in nanosheets of SnO2: A first-principles study
DOI:10.1016/j.jmmm.2012.10.017 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:14 AU: Rahman, Gul;Garcia-Suarez, Victor M.;Morbec, J. M.;
10:24:18 Correlated room temperature ferromagnetism and photoluminescence in Al-doped SnO2 nanoparticles
DOI:10.1007/s11051-014-2573-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Wang, Jianchun;Zhou, Wei;Wu, Ping;
10:24:19 Growth and characterization of Mn-doped In2O3 nanowires and terraced microstructures
DOI:10.1016/j.actamat.2014.04.069 JN:ACTA MATERIALIA PY:2014
TC:0 AU: Herrera, M.;Cremades, A.;Maestre, D.;Piqueras, J.;
10:24:20 Structural, electrical and magnetic studies of Co:SnO2 and (Co,Mo):SnO2 films prepared by pulsed laser deposition
DOI:10.1016/j.apsusc.2012.12.039 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Dalui, S.;Rout, S.;Silvestre, A. J.;Lavareda, G.;Pereira, L. C. J.;Brogueira, P.;Conde, O.;
10:24:21 Magnetism in non-transition-metal doped CdS studied by density functional theory
DOI:10.1016/j.commatsci.2010.12.025 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2011
TC:22 AU: Ma, Yandong;Dai, Ying;Huang, Baibiao;
10:24:22 First-principles characterization of ferromagnetism in N-doped SrTiO3 and BaTiO3
DOI:10.1063/1.3684832 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Yang, Kesong;Dai, Ying;Huang, Baibiao;
10:24:23 Unexpected magnetic properties in carbon-doped SnO2 from first-principles calculation
DOI:10.1016/j.commatsci.2013.10.042 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:3 AU: Xiao, Wen-Zhi;Wang, Ling-Ling;Tan, Zhiyun;
10:24:24 Ferromagnetism of Cd doped SnO2: A first-principles study
DOI:10.1063/1.4748146 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Zhang, Kai-Cheng;Li, Yong-Feng;Liu, Yong;Zhu, Yan;
10:24:25 Origin of ferromagnetism in Zn-doped SnO2 from first-principles study
DOI:10.1016/j.jmmm.2012.08.004 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:10 AU: Zhang, Yun-Li;Tao, Xiang-Ming;Tan, Ming-Qiu;
10:24:26 Synthesis and room-temperature ferromagnetism of pure and Cu-doped SnO2 nano wires grown by thermal evaporation
DOI:10.1016/j.jmmm.2014.02.081 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:8 AU: Johari, Anima;Srivastav, Simant;Sharma, Manish;Bhatnagar, Mukesh C.;
10:24:27 Density-functional study on the robust ferromagnetism in rare-earth element Yb-doped SnO2
DOI:10.1016/j.jmmm.2014.02.054 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:2 AU: Zhang, Kai-Cheng;Li, Yong-Feng;Liu, Yong;Chi, Feng;
10:24:28 Magnetic behavior of SnO2 nanosheets at room temperature
DOI:10.1063/1.3473764 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Wang, Cen;Ge, Mingyuan;Jiang, J. Z.;
10:24:29 Origin of ferromagnetism in Ni-doped SnO2: First-principles calculation
DOI:10.1063/1.3428473 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Wang, Hongxia;Yan, Yu;Du, Xiaobo;Liu, Xiuqin;Li, Kai;Jin, Hanmin;
10:24:30 First-principles study of electronic structure and magnetic properties of doped SnO2 (rutile) with single and double impurities
DOI:10.1016/j.jmmm.2011.06.021 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:10 AU: Lamrani, A. Fakhim;Belaiche, M.;Benyoussef, A.;El Kenz, A.;Saidi, E. H.;
10:24:31 Effects of vacancy and lattice distortion on ferromagnetism in sputtered epitaxial Sn1-xKxO2 films
DOI:10.1016/j.jmmm.2013.12.003 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:3 AU: Zhou, Baozeng;Zhou, Wei;Wu, Ping;
10:24:32 Vacancy-induced room-temperature ferromagnetism in Ga-TiO2
DOI:10.1016/j.scriptamat.2012.02.031 JN:SCRIPTA MATERIALIA PY:2012
TC:8 AU: Bao, N. N.;Yi, J. B.;Fan, H. M.;Qin, X. B.;Zhang, P.;Wang, B. Y.;Ding, J.;Li, S.;
10:24:33 Tunable bandgap and ferromagnetism in sputtered epitaxial Sn1-xMgxO2 thin films
DOI:10.1063/1.4765346 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Zhou, Baozeng;Wu, Ping;Zhou, Wei;
10:24:34 Room temperature ferromagnetism in Sm-doped SnO2 PLD film
DOI:10.1016/j.apsusc.2013.05.139 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Cao, Ensi;Zhang, Yongjia;Hao, Wentao;Peng, Hua;Sun, Lihui;Hu, Jifan;
10:24:35 Indication of room temperature ferromagnetism in highly transparent and conductive Ga-doped SnO2 thin films
DOI:10.1016/j.tsf.2013.04.053 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Anwar, M. S.;Ahmed, Faheem;Heo, Si Nae;Park, Keun Young;Koo, Bon Heun;
10:24:36 Possible room-temperature ferromagnetism in K-doped SnO2: X-ray diffraction and high-resolution transmission electron microscopy study
DOI:10.1103/PhysRevB.82.193203 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Srivastava, S. K.;Lejay, P.;Barbara, B.;Pailhes, S.;Madigou, V.;Bouzerar, G.;
10:24:37 Room temperature ferromagnetism in N-doped rutile TiO2 films
DOI:10.1063/1.3535427 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:20 AU: Bao, N. N.;Fan, H. M.;Ding, J.;Yi, J. B.;
10:24:38 Magnetic properties of Fe and Co codoped SnO2 prepared by sol-gel method
DOI:10.1063/1.3651468 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Nomura, K.;Okabayashi, J.;Okamura, K.;Yamada, Y.;
10:24:39 Ferromagnetic spin-order in p-type N-doped SnO2 films prepared by thermal oxidation of SnNx
DOI:10.1016/j.jmmm.2014.03.017 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:3 AU: Zhou, Baozeng;Dong, Shengjie;Zhao, Hui;Liu, Yanyu;Wu, Ping;
10:24:40 Ferromagnetism induced by intrinsic defects and nitrogen substitution in SnO2 nanotube
DOI:10.1016/j.apsusc.2011.07.021 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Zhang, Yongjia;Liu, Hua;Qin, Hongwei;Hu, Jifan;
10:24:41 Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films
DOI:10.1016/j.jallcom.2013.04.109 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Salmani, E.;Mounkachi, O.;Ez-Zahraouy, H.;Benyoussef, A.;Hamedoun, M.;Hlil, E. K.;
10:24:42 High blocking temperature in SnO2 based super-paramagnetic diluted magnetic semiconductor
DOI:10.1016/j.jallcom.2014.06.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Mounkachi, O.;Salmani, E.;El Moussaoui, H.;Masrour, R.;Hamedoun, M.;Ez-Zahraouy, H.;Hlil, E. K.;Benyoussef, A.;
10:24:43 O-vacancy-mediated spin-spin interaction in Co-doped ZnO: First-principles total-energy calculations
DOI:10.1063/1.3284075 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Liu, En-Zuo;Jiang, J. Z.;
10:24:44 Competition between ferromagnetic and anti-ferromagnetic couplings in Co doped ZnO with vacancies and Ga co-dopants
DOI:10.1016/j.jmmm.2011.12.039 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Tsai, M. -H.;Jiang, T. -Y.;Huang, C. -Y.;
10:24:45 Magnetic and electronic properties of Fe and Ni codoped SnO2
DOI:10.1063/1.4754454 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Okabayashi, Jun;Kono, Shin;Yamada, Yasuhiro;Nomura, Kiyoshi;
10:25:1 Grain boundaries as the controlling factor for the ferromagnetic behaviour of Co-doped ZnO
DOI:10.1080/14786435.2012.736693 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:59 AU: Straumal, Boris B.;Mazilkin, Andrei A.;Protasova, Svetlana G.;Straumal, Petr B.;Myatiev, Ata A.;Schuetz, Gisela;Goering, Eberhard J.;Tietze, Thomas;Baretzky, Brigitte;
10:25:2 Amorphous grain boundary layers in the ferromagnetic nanograined ZnO films
DOI:10.1016/j.tsf.2011.04.154 JN:THIN SOLID FILMS PY:2011
TC:62 AU: Straumal, B. B.;Mazilkin, A. A.;Protasova, S. G.;Myatiev, A. A.;Straumal, P. B.;Goering, E.;Baretzky, B.;
10:25:3 Amorphous interlayers between crystalline grains in ferromagnetic ZnO films
DOI:10.1016/j.matlet.2011.11.082 JN:MATERIALS LETTERS PY:2012
TC:61 AU: Straumal, B. B.;Protasova, S. G.;Mazilkin, A. A.;Baretzky, B.;Myatiev, A. A.;Straumal, P. B.;Tietze, Th.;Schuetz, G.;Goering, E.;
10:25:4 Ferromagnetic properties of the Mn-doped nanograined ZnO films
DOI:10.1063/1.3486044 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:66 AU: Straumal, B. B.;Protasova, S. G.;Mazilkin, A. A.;Myatiev, A. A.;Straumal, P. B.;Schuetz, G.;Goering, E.;Baretzky, B.;
10:25:5 Synthesis of ZnO nanostructures by spontaneous oxidation of Zn films on p-type silicon substrates
DOI:10.1016/j.jallcom.2013.12.106 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Xu, Qiang;Cheng, Qijin;Zhang, Zifeng;Hong, Rongdun;Chen, Xiaping;Wu, Zhengyun;Zhang, Fengyan;
10:25:6 Hydrothermal synthesis and characterization of ZnO films with different nanostructures
DOI:10.1016/j.apsusc.2011.01.039 JN:APPLIED SURFACE SCIENCE PY:2011
TC:17 AU: Yu, Jiaoxian;Huang, Baibiao;Qin, Xiaoyan;Zhang, Xiaoyang;Wang, Zeyan;Liu, Haixia;
10:25:7 Enhanced band-gap emission in ZnO Nanocaves by two-step thermal oxidation Zn film
DOI:10.1016/j.matlet.2012.09.042 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Xu, Qiang;Hong, Rongdun;Huang, Huolin;Zhang, Zifeng;Chen, Xiaping;Wu, Zhengyun;
10:25:8 Facile and fast synthesis of flower-like ZnO nanostructures
DOI:10.1016/j.matlet.2012.11.042 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Ramasamy, Parthiban;Kim, Jinkwon;
10:25:9 Controllable synthesis of ZnO microstructures with morphologies from rods to disks
DOI:10.1016/j.matlet.2012.10.049 JN:MATERIALS LETTERS PY:2013
TC:6 AU: He, Minhong;Jiu, Hongfang;Liu, Yaqing;Tian, Ye;Li, Donglin;Sun, Youyi;Zhao, Guizhe;
10:25:10 Preparation of ZnO nanorods via aqueous solution process and their PL properties
DOI:10.1016/j.matlet.2012.09.070 JN:MATERIALS LETTERS PY:2013
TC:11 AU: Wang, Yixiao;Hou, Zhenqing;Guo, Hao;Shen, Lihua;Wang, Gongxin;Cui, Fei;Zhang, Qiqing;
10:25:11 Rapid photocatalytic degradation of crystal violet dye over ZnO flower nanomaterials
DOI:10.1016/j.matlet.2013.01.034 JN:MATERIALS LETTERS PY:2013
TC:20 AU: Ameen, Sadia;Akhtar, M. Shaheer;Nazim, M.;Shin, Hyung-Shik;
10:25:12 Advanced ZnO-graphene oxide nanohybrid and its photocatalytic Applications
DOI:10.1016/j.matlet.2013.03.012 JN:MATERIALS LETTERS PY:2013
TC:17 AU: Ameen, Sadia;Akhtar, M. Shaheer;Seo, Hyung-Kee;Shin, Hyung Shik;
10:25:13 Synthesis of three dimensional hierarchical ZnS coated ZnO nanoclusters by modifying ZnO nanocolumns
DOI:10.1016/j.matlet.2013.07.064 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Xu, Qiang;Zhong, Chuwei;Cheng, Qijin;Zhang, Zifeng;Zhang, Zhiwei;Chen, Chen;Wu, Zhengyun;Zhang, Fengyan;
10:25:14 ZnO nano-platelets by laser induced plasma assisted-irradiation with a pulse KrF laser
DOI:10.1016/j.matlet.2013.04.011 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Xu, Qiang;Zhang, Zifeng;Hong, Rongdun;Chen, Xiaping;Zhang, Fengyan;Wu, Zhengyun;
10:25:15 Nanocrystalline/nanoparticle ZnO synthesized by high energy ball milling process
DOI:10.1016/j.matlet.2012.07.041 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Amirkhanlou, Sajjad;Ketabchi, Mostafa;Parvin, Nader;
10:25:16 Reversible wettability control of ZnO thin films synthesized by hydrothermal process on different buffer layers
DOI:10.1016/j.matlet.2013.08.023 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Li, Bao-jia;Huang, Li-jing;Zhou, Ming;Ren, Nai-fei;
10:25:17 Surface-enhanced Raman scattering and photocurrent multiplication phenomenon of ZnO/Ag nanoarrays
DOI:10.1016/j.matlet.2012.11.128 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Liu, Xueqin;Li, Fei;Wang, Yongqian;Jin, Hongyun;Wang, Hao;Li, Zhen;
10:25:18 Localised zinc oxide nanowires growth on printed circuit board by in-situ joule heating
DOI:10.1016/j.matlet.2012.02.111 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Chew, Zheng J.;Li, Lijie;
10:25:19 Facile fabrication of transparent SnO2 nanorod array and their photoelectrochemical properties
DOI:10.1016/j.matlet.2012.11.050 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zhou, Xiaoming;Fu, Wuyou;Yang, Haibin;Mu, Yannan;Ma, Jinwen;Tian, Lecheng;Zhao, Bo;Li, Minghui;
10:25:20 Morphology-controlled synthesis of ZnO crystals with twinned structures and the morphology dependence of their antibacterial activities
DOI:10.1016/j.matlet.2013.10.056 JN:MATERIALS LETTERS PY:2014
TC:9 AU: Jin, Da-Hae;Kim, Dahye;Seo, Youngsik;Park, Heonyong;Huh, Young-Duk;
10:25:21 Mineralization of rhodamine 6G dye over rose flower-like ZnO nanomaterials
DOI:10.1016/j.matlet.2013.09.004 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Ameen, Sadia;Akhtar, M. Shaheer;Seo, Hyung-Kee;Shin, Hyung-Shik;
10:25:22 A discrete memristor made of ZnO nanowires synthesized on printed circuit board
DOI:10.1016/j.matlet.2012.10.011 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Chew, Zheng J.;Li, Lijie;
10:25:23 Low temperature grown ZnO nanotubes as smart sensing electrode for the effective detection of ethanolamine chemical
DOI:10.1016/j.matlet.2013.05.031 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Ameen, Sadia;Akhtar, M. Shaheer;Shin, Hyung-Shik;
10:25:24 Hierarchical ZnO "rod like" architecture synthesized via reverse micellar route for improved photocatalytic activity
DOI:10.1016/j.matlet.2013.03.065 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Kumar, Santosh;Surendar, T.;Das, Debashree;Kumar, Bharat;Shanker, Vishnu;
10:25:25 Optical properties of laser ablated ZnO nanoparticles prepared with Tween-80
DOI:10.1016/j.matlet.2014.02.022 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Hussain, Mian Zahid;Khan, Rashid;Ali, Raheel;Khan, Yagoob;
10:25:26 Metal buffer layer mediated wettability of nanostructured TiO2 films
DOI:10.1016/j.matlet.2012.10.070 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Purkayastha, Debarun Dhar;Pandeeswari, R.;Madhurima, V.;Krishna, M. Ghanashyam;
10:25:27 Template-free and eco-friendly synthesis of hierarchical Ag3PO4 microcrystals with sharp corners and edges for enhanced photocatalytic activity under visible light
DOI:10.1016/j.matlet.2014.02.106 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Kumar, Santosh;Surendar, Tonda;Shanker, Vishnu;
10:25:28 Pores on TiO2 nanosheets with exposed high active facets
DOI:10.1016/j.matlet.2014.02.110 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Tian, Feng;Li, Yuhang;Xing, Jun;Tian, Hua;Whitmore, Lawrence;Yang, HuaGui;Yang, Xiaohua;
10:25:29 Raman scattering studies of Mn-doped ZnO thin films deposited under pure Ar or Ar + N-2 sputtering atmosphere
DOI:10.1016/j.tsf.2010.09.023 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Hu, Y. M.;Wang, C. Y.;Lee, S. S.;Han, T. C.;Chou, W. Y.;
10:25:30 Controllable synthesis of ZnO architectures by a surfactant-free hydrothermal process
DOI:10.1016/j.matlet.2012.01.013 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Du, Guixiang;Zhang, Lidong;Feng, Yan;Xu, Yanyan;Sun, YuXiu;Ding, Bin;Wang, Qian;
10:25:31 Synthesis of cobalt oxide nanowires using a glycerol thermal route
DOI:10.1016/j.matlet.2013.01.019 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Bhatte, Kushal D.;Bhanage, Bhalchandra M.;
10:25:32 Synthesis and photocatalytic application of ZnO nanoarrows
DOI:10.1016/j.matlet.2014.04.081 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Murugan, R.;Woods, Trevor;Fleming, Peter;Sullivan, Dermot;Ramakrishna, Seeram;Babu, Ramesh P.;
10:25:33 Effect of the nanostructure on room temperature ferromagnetism and resistivity of undoped ZnO thin films grown by chemical vapor deposition
DOI:10.1016/j.tsf.2011.10.198 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Burova, Lidia I.;Perov, Nikolai S.;Semisalova, Anna S.;Kulbachinskii, Vladimir A.;Kytin, Vladimir G.;Roddatis, Vladimir V.;Vasiliev, Alexander L.;Kaul, Andrey R.;
10:25:34 Catalyst-free growth of Sb2Te3 nanowires
DOI:10.1016/j.matlet.2010.12.025 JN:MATERIALS LETTERS PY:2011
TC:4 AU: Kim, Byeong Geun;Kim, Byung-Sung;Jeong, Seong-Min;Choi, Soon-Mok;Whang, Dongmok;Lee, Hong-Lim;
10:25:35 Fabrication of silica nanotubes using Sb2Te3 nanowires as templates
DOI:10.1016/j.matlet.2012.03.108 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Kim, Byeong Geun;Jeong, Seong-Min;Choi, Soon-Mok;Hyun, Sang-Hoon;Lee, Hong-Lim;
10:25:36 Synthetics of ZnO nanowires on GaN micro-pyramids by gold catalyst
DOI:10.1016/j.matlet.2011.11.122 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Xu, C. H.;Leung, K.;Hu, J.;Surya, C.;
10:25:37 SnO2 Nanoparticle-Based Passive Capacitive Sensor for Ethylene Detection
DOI:10.1155/2012/145406 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:3 AU: Agarwal, Mangilal;Balachandran, Mercyma D.;Shrestha, Sudhir;Varahramyan, Kody;
10:25:38 Synthesis of novel pure SnO nanostructures by thermal evaporation
DOI:10.1016/j.matlet.2012.07.019 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Kim, Ki-Chul;Lee, Deuk-Hee;Maeng, Sunglyul;
10:25:39 Uniform single-crystalline zinc oxide round nanodisks, a comprehensive study on the hydrothermal growth
DOI:10.1016/j.matlet.2012.06.097 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Bin Jin, Bin;Zeng, Jing Hui;Wang, Ye Feng;Yang, Qing;
10:25:40 Formation of nano-crystalline Si quantum dots in ZnO thin-films using a ZnO/Si multilayer structure
DOI:10.1016/j.matlet.2011.11.022 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Kuo, Kuang-Yang;Hsu, Shu-Wei;Chuang, Wen-Ling;Lee, Po-Tsung;
10:25:41 A novel free-standing nanowire substrate with surface enhanced Raman scattering (SERS) activity
DOI:10.1016/j.matlet.2011.10.015 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Bayata, Fatma;Akinci, Z. Beril;Donatan, A. Senem;Urgen, Mustafa;
10:25:42 Enhanced structural and morphological properties of Gd-doped CeO2 thin films obtained by polymer-assisted deposition
DOI:10.1016/j.matlet.2014.03.119 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Mos, R. B.;Petrisor, T., Jr.;Nasui, M.;Calleja, A.;Puig, T.;Ciontea, L.;Petrisor, T.;
10:25:43 One-step synthesis and excellent microwave absorption of hierarchical tree-like ZnO nanostructures
DOI:10.1016/j.matlet.2013.11.084 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Zhuo, Renfu;Wang, Yinong;Yan, De;Li, Shuankui;Liu, Ying;Wang, Fengyi;
10:25:44 Growth mechanism and optical property of ZnO nanocrystals synthesized by corrosion of Cu-Zn alloy
DOI:10.1016/j.matlet.2013.11.116 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Yang, Chi;Wang, Qianwei;Wang, Peipei;Shao, Hua;Chen, Guangtong;
10:25:45 Surfactant-assisted synthesis of monodispersed ZnO nanorods at low temperature
DOI:10.1016/j.matlet.2013.09.122 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Wang, Mao-Hua;Zhou, Fu;Zhang, Bo;
10:26:1 Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition
DOI:10.1016/j.jallcom.2012.08.070 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:18 AU: Jiang, Jie;Zhu, Liping;Li, Yang;Guo, Yanmin;Zhou, Weishun;Cao, Ling;He, Haiping;Ye, Zhizhen;
10:26:2 Fabrication and properties of p-type K doped Zn1-xMgxO thin film
DOI:10.1016/j.jallcom.2011.04.047 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:17 AU: Zhang, L. Q.;Ye, Z. Z.;Huang, J. Y.;Lu, B.;He, H. P.;Lu, J. G.;Zhang, Y. Z.;Jiang, J.;Zhang, J.;Wu, K. W.;Zhang, W. G.;
10:26:3 Structural and optical properties of ZnSO alloy thin films with different S contents grown by pulsed laser deposition
DOI:10.1016/j.jallcom.2013.07.015 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Jiang, Jie;Xu, Hongbin;Zhu, Liping;Niu, Wenzhe;Guo, Yanmin;Li, Yang;Hu, Liang;He, Haiping;Ye, Zhizhen;
10:26:4 Preparation and properties of p-type Ag-doped ZnMgO thin films by pulsed laser deposition
DOI:10.1016/j.jallcom.2011.12.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:11 AU: Cao, Ling;Zhu, Liping;Jiang, Jie;Li, Yang;Zhang, Yinzhu;Ye, Zhizhen;
10:26:5 Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method
DOI:10.1016/j.apsusc.2013.03.132 JN:APPLIED SURFACE SCIENCE PY:2013
TC:12 AU: Shtepliuk, I.;Khranovskyy, V.;Lashkarev, G.;Khomyak, V.;Ievtushenko, A.;Tkach, V.;Lazorenko, V.;Timofeeva, I.;Yakimova, R.;
10:26:6 Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD
DOI:10.1016/j.jcrysgro.2010.02.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:26 AU: Yamamoto, Kenji;Tsuboi, Takako;Ohashi, Toshiya;Tawara, Takehiko;Gotoh, Hideki;Nakamura, Atsushi;Temmyo, Jiro;
10:26:7 Band gap engineering in Zn(1-x)CdxO and Zn(1-x)MgxO thin films by RF sputtering
DOI:10.1016/j.ceramint.2013.07.130 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Gowrishankar, S.;Balakrishnan, L.;Gopalakrishnan, N.;
10:26:8 The influence of temperature on the structure of Cd-doped ZnO nanopowders
DOI:10.1016/j.jallcom.2009.11.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:32 AU: Mahmoud, Waleed E.;Al-Ghamdi, A. A.;Al-Heniti, S.;Al-Ameer, S.;
10:26:9 Effect of cadmium oxide incorporation on the microstructural and optical properties of pulsed laser deposited nanostructured zinc oxide thin films
DOI:10.1016/j.matchemphys.2010.01.004 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:35 AU: Vinodkumar, R.;Lethy, K. J.;Arunkumar, P. R.;Krishnan, Renju R.;Pillai, N. Venugopalan;Pillai, V. P. Mahadevan;Philip, Reji;
10:26:10 Pulsed laser deposition of high-quality ZnCdO epilayers and ZnCdO/ZnO single quantum well on sapphire substrate
DOI:10.1063/1.3478006 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Yang, W. F.;Liu, B.;Chen, R.;Wong, L. M.;Wang, S. J.;Sun, H. D.;
10:26:11 Optoelectronic studies of sol-gel derived nanostructured CdO-ZnO composite films
DOI:10.1016/j.jallcom.2011.06.050 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:31 AU: Ziabari, A. Abdolahzadeh;Ghodsi, F. E.;
10:26:12 Doping and annealing effects on ZnO:Cd thin films by sol-gel method
DOI:10.1016/j.jallcom.2011.01.176 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:18 AU: Li, Gang;Zhu, Xuebin;Tang, Xianwu;Song, Wenhai;Yang, Zhaorong;Dai, Jianming;Sun, Yuping;Pan, Xu;Dai, Songyuan;
10:26:13 Gas sensing performance of the spray deposited Cd-ZnO thin films
DOI:10.1016/j.jallcom.2014.01.200 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Tarwal, N. L.;Patil, A. R.;Harale, N. S.;Rajgure, A. V.;Suryavanshi, S. S.;Bae, W. R.;Patil, P. S.;Kim, J. H.;Jang, J. H.;
10:26:14 Synthesis of cadmium oxide doped ZnO nanostructures using electrochemical deposition
DOI:10.1016/j.jallcom.2011.01.168 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:22 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:26:15 Growth of non-polar a-plane Zn1-xCdxO films by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2013.04.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Li, Y.;Pan, X. H.;Jiang, J.;He, H. P.;Huang, J. Y.;Ye, C. L.;Ye, Z. Z.;
10:26:16 Realization of band-gap engineering of ZnO thin films via Ca alloying
DOI:10.1016/j.matlet.2013.03.031 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Cao, Ling;Jiang, Jie;Zhu, Liping;
10:26:17 Optical properties of CdSe and CdO thin films electrochemically prepared
DOI:10.1016/j.tsf.2009.09.030 JN:THIN SOLID FILMS PY:2010
TC:32 AU: Henriquez, R.;Grez, P.;Munoz, E.;Gomez, H.;Badan, J. A.;Marotti, R. E.;Dalchiele, E. A.;
10:26:18 Influence of substrate temperature on structural and optical properties of ZnCdO thin films deposited by dc magnetron sputtering
DOI:10.1016/j.ceramint.2014.01.136 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Sui, Y. R.;Yue, Y. G.;Cao, Y.;Yao, B.;Liu, X. Y.;Lang, J. H.;Gao, M.;Li, X. F.;Li, X. Y.;Yang, J. H.;
10:26:19 Tuning visible emission by choosing excitation wavelength in Mg-doped ZnO/silica composites
DOI:10.1016/j.jallcom.2010.06.088 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Hong, Jian-He;Wang, Yan-Fen;He, Gang;Wang, Jun-Xia;
10:26:20 Structure and optical properties of Cd-substituted ZnO (Zn1-xCdxO) thin films synthesized by the dc reactive magnetron sputtering
DOI:10.1007/s00339-014-8451-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Yang, Jinghai;Yue, Yonggao;Sui, Yingrui;Cao, Yan;Wei, Maobin;Liu, Xiaoyan;Yang, Lili;Lang, Jihui;Li, Xuefei;Li, Xiuyan;
10:26:21 Structural, optical and electrical properties of Zn1-xCdxO thin films prepared by PLD
DOI:10.1016/j.apsusc.2011.01.070 JN:APPLIED SURFACE SCIENCE PY:2011
TC:18 AU: Zheng, B. J.;Lian, J. S.;Zhao, L.;Jiang, Q.;
10:26:22 (Zn,Cd)O thin films for the application in heterostructures: Structural and optical properties
DOI:10.1063/1.4766905 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Lange, M.;Dietrich, C. P.;Brachwitz, K.;Boentgen, T.;Lorenz, M.;Grundmann, M.;
10:26:23 Effect of Cd dopant on electrical and optical properties of ZnO thin films prepared by spray pyrolysis route
DOI:10.1016/j.tsf.2012.10.100 JN:THIN SOLID FILMS PY:2012
TC:14 AU: Acharya, A. D.;Moghe, Shweta;Panda, Richa;Shrivastava, S. B.;Gangrade, Mohan;Shripathi, T.;Phase, D. M.;Ganesan, V.;
10:26:24 Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition
DOI:10.1063/1.3567549 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Yang, W. F.;Wong, L. M.;Wang, S. J.;Sun, H. D.;Ge, C. H.;Lee, Alex Y. S.;Gong, H.;
10:26:25 Effect of post annealing temperature on structural and optical properties of ZnCdO thin films deposited by sol-gel method
DOI:10.1016/j.apsusc.2011.10.096 JN:APPLIED SURFACE SCIENCE PY:2011
TC:14 AU: Singh, Amanpal;Kumar, Dinesh;Khanna, P. K.;Joshi, Bhubesh Chander;Kumar, Mukesh;
10:26:26 Structural and optical properties of ZnCdO/ZnO multiple quantum wells grown on sapphire substrates using pulsed laser deposition
DOI:10.1063/1.4759325 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Jiang, J.;Zhu, L. P.;He, H. P.;Li, Y.;Guo, Y. M.;Cao, L.;Li, Y. G.;Wu, K. W.;Zhang, L. Q.;Ye, Z. Z.;
10:26:27 Surface plasmon driven enhancement in UV-emission of electrochemically grown Zn1-xCdxO nanorods using Au nanoparticles
DOI:10.1016/j.jallcom.2012.10.070 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:26:28 Luminescence properties of ZnO/Zn(1-x)CdxO/ZnO double heterostructures
DOI:10.1063/1.3372715 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Lange, M.;Dietrich, C. P.;Czekalla, C.;Zippel, J.;Benndorf, G.;Lorenz, M.;Zuniga-Perez, J.;Grundmann, M.;
10:26:29 Surface-plasmon enhancement of band gap emission from ZnCdO thin films by gold particles
DOI:10.1063/1.3476357 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Yang, W. F.;Chen, R.;Liu, B.;Gurzadyan, G. G.;Wong, L. M.;Wang, S. J.;Sun, H. D.;
10:26:30 Thermal stability of CdZnO thin films grown by molecular-beam epitaxy
DOI:10.1016/j.apsusc.2010.02.083 JN:APPLIED SURFACE SCIENCE PY:2010
TC:13 AU: Li, L.;Yang, Z.;Zuo, Z.;Lim, J. H.;Liu, J. L.;
10:26:31 Thermally stimulated current analysis of Zn1-xCdxO alloy films
DOI:10.1016/j.jallcom.2010.11.077 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Aybek, A. Senol;Baysal, Nihal;Zor, Muhsin;Turan, Evren;Kul, Metin;
10:26:32 Synthesis and characterization of ZnCdO/ZnO multiple quantum wells by remote-plasma-enhanced MOCVD
DOI:10.1016/j.jcrysgro.2010.01.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Yamamoto, Kenji;Adachi, Masahiko;Tawara, Takehiko;Gotoh, Hideki;Nakamura, Atsushi;Temmyo, Jiro;
10:26:33 Characterizations of ZnO and Zn(1-x)CdxO thin films grown on Zn- and O-face ZnO substrates by metal organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.02.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Boukadhaba, M. A.;Fouzri, A.;Saidi, C.;Sakly, N.;Souissi, A.;Bchetnia, A.;Sartel, C.;Sallet, V.;Oumezzine, M.;
10:26:34 Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films
DOI:10.1007/s10853-014-8396-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: Verma, Shruti;Pandey, Sushil Kumar;Gupta, Mukul;Mukherjee, Shaibal;
10:26:35 MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
DOI:10.1116/1.3531709 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:3 AU: Lange, M.;Dietrich, C. P.;Zuniga-Perez, J.;von Wenckstern, H.;Lorenz, M.;Grundmann, M.;
10:26:36 Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
DOI:10.1063/1.4799491 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Lopez-Ponce, M.;Hierro, A.;Ulloa, J. M.;Lefebvre, P.;Munoz, E.;Agouram, S.;Munoz-Sanjose, V.;Yamamoto, K.;Nakamura, A.;Temmyo, J.;
10:26:37 Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films
DOI:10.1063/1.4798605 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Sui, Yingrui;Yao, Bin;Xiao, Li;Xing, Guozhong;Yang, Lili;Li, Xuefei;Li, Xiuyan;Lang, Jihui;Lv, Shiquan;Cao, Jian;Gao, Ming;Yang, Jinghai;
10:26:38 A comparative structure and morphology study of Zn(1-x)CdxO solid solution grown on ZnO and different sapphire orientations
DOI:10.1016/j.jcrysgro.2011.06.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Fouzri, A.;Sallet, V.;Oumezzine, M.;
10:26:39 Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2011.06.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Lange, M.;Dietrich, C. P.;Benndorf, G.;Lorenz, M.;Zuniga-Perez, J.;Grundmann, M.;
10:26:40 VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion
DOI:10.1088/0957-4484/25/25/255202 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Lopez-Ponce, M.;Nakamura, A.;Suzuki, M.;Temmyo, J.;Agouram, S.;Martinez-Tomas, M. C.;Munoz-Sanjose, V.;Lefebvre, P.;Ulloa, J. M.;Munoz, E.;Hierro, A.;
10:26:41 Structural properties and morphology of Zn(1-x)CdxO solid solution grown on ZnO and C-plane sapphire substrate
DOI:10.1016/j.tsf.2011.11.027 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Fouzri, A.;Boukadhaba, M. A.;Oumezzine, M.;Sallet, V.;
10:26:42 Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films
DOI:10.1063/1.4818819 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Pandey, Sushil Kumar;Pandey, Saurabh Kumar;Awasthi, Vishnu;Gupta, M.;Deshpande, U. P.;Mukherjee, Shaibal;
10:26:43 Structural, morphological and optical properties of Cd doped ZnO film grown on a- and r-plane sapphire substrate by MOCVD
DOI:10.1016/j.apsusc.2014.05.131 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Fouzri, A.;Boukadhaba, M. A.;Toure, A.;Sakly, N.;Bchetnia, A.;Sallet, V.;
10:26:44 Temperature dependence of weak localization effects of excitons in ZnCdO/ZnO single quantum well
DOI:10.1063/1.3592887 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Yang, W. F.;Chen, R.;Liu, B.;Wong, L. M.;Wang, S. J.;Sun, H. D.;
10:26:45 Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers
DOI:10.1063/1.4896268 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Karaliunas, Mindaugas;Kuokstis, Edmundas;Ting, Shao-Ying;Huang, Jeng-Jie;Yang, C. C.;
10:26:46 Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO films
DOI:10.1016/j.jcrysgro.2010.03.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Zhang, Ruijie;Chen, Peiliang;Zhang, Yuanyuan;Ma, Xiangyang;Yang, Deren;
10:26:47 p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient
DOI:10.1063/1.4827379 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Pandey, Sushil Kumar;Pandey, Saurabh Kumar;Awasthi, Vishnu;Kumar, Ashish;Deshpande, Uday P.;Gupta, Mukul;Mukherjee, Shaibal;
10:26:48 Synthesis and characterization of CdxZn1-xO nanoparticles-doped aryl poly ether ether ketone for novel application potentials
DOI:10.1002/app.35570 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:7 AU: Mahmoud, Waleed E.;Shirbeeny, W.;Al-Ghamdi, A. A.;Al-Heniti, S.;
10:26:49 Effects of phosphorus doping in ZnO nanocrystals by metal organic chemical vapor deposition
DOI:10.1016/j.matlet.2011.10.072 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Jiang, Jie;Zhu, Liping;Wu, Yazhen;Zeng, Yujia;He, Haiping;Lin, Junming;Ye, Zhizhen;
10:26:50 The fabrication of Na doped p-type Zn1-x Mg (x) O films by pulsed laser deposition
DOI:10.1007/s00339-011-6547-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Zhang, L. Q.;Zhang, Y. Z.;Ye, Z. Z.;Lin, S. S.;Lu, B.;He, H. P.;Chen, L. X.;Lu, J. G.;Jiang, J.;Wu, K. W.;Huang, J. Y.;Zhu, L. P.;
10:26:51 Growth of MgxZn1-xO films using remote plasma MOCVD (vol 244, pg 385, 2005)
DOI:10.1016/j.apsusc.2011.06.024 JN:APPLIED SURFACE SCIENCE PY:2011
TC:0 AU: Nakamura, Atsushi;Ishihara, Junji;Shigemori, Satoshi;Aoki, Toru;Temmyo, Jiro;
10:26:52 Study on chemical solution deposition of aluminum-doped zinc oxide films
DOI:10.1016/j.jallcom.2010.06.083 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:3 AU: Li, Gang;Zhu, Xuebin;Lei, Hechang;Song, Wenhai;Yang, Zhaorong;Dai, Jianming;Sun, Yuping;Pan, Xu;Dai, Songyuan;
10:26:53 Thermoluminescence properties of Tl2Ga2S3Se layered single crystals
DOI:10.1063/1.4807165 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Delice, S.;Isik, M.;Bulur, E.;Gasanly, N. M.;
10:26:54 Growth studies and optical properties of Zn1-xCdxO films grown by metal-organic chemical-vapor deposition
DOI:10.1116/1.3567960 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:1 AU: Sartel, Corinne;Haneche, Nadia;Vilar, Christele;Amiri, Gaelle;Laroche, Jean-Michel;Jomard, Francois;Lusson, Alain;Galtier, Pierre;Sallet, Vincent;Couteau, Christophe;Lin, Jenny;Aad, Roy;Lerondel, Gilles;
10:26:55 Zn0.94Cd0.06O nanoparticles with various structures, morphologies and optical properties toward MB optodecolorization
DOI:10.1016/j.opmat.2013.11.015 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Karimi, M.;Jahangir, V.;Ezzati, M.;Saydi, J.;Lejbini, M. Behtaj;
10:26:56 Zinc cadmium oxide thin film transistors fabricated at room temperature
DOI:10.1016/j.tsf.2011.02.079 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Lee, Deuk-Hee;Kim, Sangsig;Lee, Sang Yeol;
10:26:57 Features of the influence of the deposition power and Ar/O-2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.10 films
DOI:10.1016/j.tsf.2011.10.181 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Shtepliuk, I.;Lashkarev, G.;Khomyak, V.;Lytvyn, O.;Marianchuk, P.;Timofeeva, I.;Ievtushenko, A.;Lazorenko, V.;
10:27:1 Transferable and Flexible Nanorod-Assembled TiO2 Cloths for Dye-Sensitized Solar Cells, Photodetectors, and Photocatalysts
DOI:10.1021/nn203315k JN:ACS NANO PY:2011
TC:85 AU: Wang, Zhuoran;Wang, Heng;Liu, Bin;Qiu, Wenzhe;Zhang, Jun;Ran, Sihan;Huang, Hongtao;Xu, Jing;Han, Hongwei;Chen, Di;Shen, Guozhen;
10:27:2 Metal oxide nanowire transistors
DOI:10.1039/c2jm31679j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:16 AU: Huang, Hongtao;Liang, Bo;Liu, Zhe;Wang, Xianfu;Chen, Di;Shen, Guozhen;
10:27:3 High performance rigid and flexible visible-light photodetectors based on aligned X(In, Ga)P nanowire arrays
DOI:10.1039/c3tc31507j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:6 AU: Chen, Gui;Liang, Bo;Liu, Zhe;Yu, Gang;Xie, Xuming;Luo, Tao;Xie, Zhong;Chen, Di;Zhu, Ming-Qiang;Shen, Guozhen;
10:27:4 Growth of Directly Transferable In2O3 Nanowire Mats for Transparent Thin-film Transistor Applications
DOI:10.1002/adma.201003474 JN:ADVANCED MATERIALS PY:2011
TC:48 AU: Shen, Guozhen;Xu, Jing;Wang, Xianfu;Huang, Hongtao;Chen, Di;
10:27:5 ZnO-nanoparticle-assembled cloth for flexible photodetectors and recyclable photocatalysts
DOI:10.1039/c2jm16781f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:34 AU: Liu, Bin;Wang, Zhuoran;Dong, Yuan;Zhu, Yuguang;Gong, Yue;Ran, Sihan;Liu, Zhe;Xu, Jing;Xie, Zhong;Chen, Di;Shen, Guozhen;
10:27:6 Ultrathin In2O3 Nanowires with Diameters below 4 nm: Synthesis, Reversible Wettability Switching Behavior, and Transparent Thin-Film Transistor Applications
DOI:10.1021/nn2014722 JN:ACS NANO PY:2011
TC:50 AU: Shen, Guozhen;Liang, Bo;Wang, Xianfu;Huang, Hongtao;Chen, Di;Wang, Zhong Lin;
10:27:7 Single-Crystalline p-Type Zn3As2 Nanowires for Field-Effect Transistors and Visible-Light Photodetectors on Rigid and Flexible Substrates
DOI:10.1002/adfm.201202739 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:23 AU: Chen, Gui;Liu, Zhe;Liang, Bo;Yu, Gang;Xie, Zhong;Huang, Hongtao;Liu, Bin;Wang, Xianfu;Chen, Di;Zhu, Ming-Qiang;Shen, Guozhen;
10:27:8 Enhanced HCHO gas sensing properties by Ag-loaded sunflower-like In2O3 hierarchical nanostructures
DOI:10.1039/c3ta15110g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:15 AU: Wang, Shuangming;Xiao, Bingxin;Yang, Tianye;Wang, Pan;Xiao, Chuanhai;Li, Zhifang;Zhao, Rui;Zhang, Mingzhe;
10:27:9 Electric transport, reversible wettability and chemical sensing of single-crystalline zigzag Zn2SnO4 nanowires
DOI:10.1039/c1jm13579a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:11 AU: Chen, Di;Xu, Jing;Liang, Bo;Wang, Xianfu;Chen, Po-Chiang;Zhou, Chongwu;Shen, Guozhen;
10:27:10 Nanowires Assembled SnO2 Nanopolyhedrons with Enhanced Gas Sensing Properties
DOI:10.1021/am2003312 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:58 AU: Chen, Di;Xu, Jing;Xie, Zhong;Shen, Guozhen;
10:27:11 Hierarchical SnO2 Nanostructures Made of Intermingled Ultrathin Nanosheets for Environmental Remediation, Smart Gas Sensor, and Supercapacitor Applications
DOI:10.1021/am405301v JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:46 AU: Liu, Yang;Jiao, Yang;Zhang, Zhenglin;Qu, Fengyu;Umar, Ahmad;Wu, Xiang;
10:27:12 Indium Oxide Nanospirals Made of Kinked Nanowires
DOI:10.1021/nn103358y JN:ACS NANO PY:2011
TC:28 AU: Shen, Guozhen;Liang, Bo;Wang, Xianfu;Chen, Po-Chiang;Zhou, Chongwu;
10:27:13 High-aspect-ratio single-crystalline porous In2O3 nanobelts with enhanced gas sensing properties
DOI:10.1039/c1jm11356a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:56 AU: Li, Yansong;Xu, Jing;Chao, Junfeng;Chen, Di;Ouyang, Shuxin;Ye, Jinhua;Shen, Guozhen;
10:27:14 Needle-like Zn-doped SnO2 nanorods with enhanced photocatalytic and gas sensing properties
DOI:10.1088/0957-4484/23/10/105502 JN:NANOTECHNOLOGY PY:2012
TC:29 AU: Huang, Hongtao;Tian, Shouqin;Xu, Jing;Xie, Zhong;Zeng, Dawen;Chen, Di;Shen, Guozhen;
10:27:15 Synthesis, characterizations and improved gas-sensing performance of SnO2 nanospike arrays
DOI:10.1039/c1jm13350k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:23 AU: Xu, Jing;Li, Yansong;Huang, Hongtao;Zhu, Yuguang;Wang, Zhuoran;Xie, Zhong;Wang, Xianfu;Chen, Di;Shen, Guozhen;
10:27:16 Synthesis of Sb2S3 nanowall arrays for high performance visible light photodetectors
DOI:10.1016/j.materresbull.2014.06.006 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Chao, Junfeng;Xing, Shumin;Zhang, Jijun;Qin, Changhai;Duan, Degong;Wu, Xinhui;Shen, Qingchao;
10:27:17 Contact printing of horizontally aligned Zn2GeO4 and In2Ge2O7 nanowire arrays for multi-channel field-effect transistors and their photoresponse performances
DOI:10.1039/c2tc00055e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:9 AU: Liu, Zhe;Liang, Bo;Chen, Gui;Yu, Gang;Xie, Zhong;Gao, Lina;Chen, Di;Shen, Guozhen;
10:27:18 Highly Ordered TiO2 Macropore Arrays as Transparent Photocatalysts
DOI:10.1155/2012/762510 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:3 AU: Dong, Yuan;Chao, Junfeng;Xie, Zhong;Xu, Xin;Wang, Zhuoran;Chen, Di;
10:27:19 Photostable Zn2SnO4 Nanowire Transistors for Transparent Displays
DOI:10.1021/nn300401w JN:ACS NANO PY:2012
TC:7 AU: Lim, Taekyung;Kim, Hwansoo;Meyyappan, M.;Ju, Sanghyun;
10:27:20 Fast-heating-vapor-trapping method to aligned indium oxide bi-crystalline nanobelts arrays and their electronic properties
DOI:10.1039/c0jm02189j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:13 AU: Shen, Guozhen;Chen, Di;
10:27:21 Synthesis, characterization and opto-electrical properties of ternary Zn2SnO4 nanowires
DOI:10.1088/0957-4484/21/46/465706 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Pang, Christina;Yan, Bin;Liao, Lei;Liu, Bo;Zheng, Zhe;Wu, Tom;Sun, Handong;Yu, Ting;
10:27:22 An evolution from 3D face-centered-cubic ZnSnO3 nanocubes to 2D orthorhombic ZnSnO3 nanosheets with excellent gas sensing performance
DOI:10.1088/0957-4484/23/41/415501 JN:NANOTECHNOLOGY PY:2012
TC:14 AU: Chen, Yuejiao;Yu, Ling;Li, Qing;Wu, Yan;Li, Qiuhong;Wang, Taihong;
10:27:23 Surface-Doping Effect of InVO4 Nanoribbons and the Distinctive Behavior as Gas Sensors
DOI:10.1021/am400221p JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Liu, Shanshan;Hu, Fei;Zhang, Jie;Tang, Hanxiao;Shao, Mingwang;
10:27:24 Metal-induced solid-phase crystallization of amorphous TiO2 thin films
DOI:10.1063/1.4739934 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Yang, Chang;Hirose, Yasushi;Nakao, Shoichiro;Hoang, Ngoc Lam Huong;Hasegawa, Tetsuya;
10:27:25 Aluminothermal Reaction Approach for Micro-/Nanofabrications: Syntheses of In2O3 Micro-/Nanostructures and InN Octahedral Nanoshells
DOI:10.1002/adma.200903656 JN:ADVANCED MATERIALS PY:2010
TC:10 AU: Yu, Jiefeng;Wang, Yu;Wen, Wen;Yang, Donghan;Huang, Bin;Li, Jianlong;Wu, Kai;
10:27:26 Themed issue: flexible electronics
DOI:10.1039/c4tc90001d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Shen, Guozhen;Liao, Lei;Zhou, Chongwu;Bando, Yoshio;
10:27:27 TiO2 thin film crystallization temperature lowered by Cu-induced solid phase crystallization
DOI:10.1016/j.tsf.2013.12.041 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Yang, Chang;Hirose, Yasushi;Nakao, Shoichiro;Hasegawa, Tetsuya;
10:28:1 Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory
DOI:10.1039/c0jm01816c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:58 AU: Walsh, Aron;Catlow, C. Richard A.;
10:28:2 High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration
DOI:10.1063/1.3480416 JN:APPLIED PHYSICS LETTERS PY:2010
TC:38 AU: Bierwagen, Oliver;Speck, James S.;
10:28:3 Surface Energies Control the Self-Organization of Oriented In2O3 Nanostructures on Cubic Zirconia
DOI:10.1021/nl102403t JN:NANO LETTERS PY:2010
TC:33 AU: Zhang, Kelvin H. L.;Walsh, Aron;Catlow, C. Richard A.;Lazarov, Vlado K.;Egdell, Russell G.;
10:28:4 Surface Origin of High Conductivities in Undoped In2O3 Thin Films
DOI:10.1103/PhysRevLett.108.016802 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:27 AU: Lany, S.;Zakutayev, A.;Mason, T. O.;Wager, J. F.;Poeppelmeier, K. R.;Perkins, J. D.;Berry, J. J.;Ginley, D. S.;Zunger, A.;
10:28:5 Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films
DOI:10.1103/PhysRevB.88.085305 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Preissler, Natalie;Bierwagen, Oliver;Ramu, Ashok T.;Speck, James S.;
10:28:6 Schottky contact by Ag on In2O3 (111) single crystals
DOI:10.1063/1.4899143 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nazarzadehmoafi, M.;Machulik, S.;Neske, F.;Scherer, V.;Janowitz, C.;Galazka, Z.;Mulazzi, M.;Manzke, R.;
10:28:7 Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals
DOI:10.1063/1.4719665 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Scherer, V.;Janowitz, C.;Krapf, A.;Dwelk, H.;Braun, D.;Manzke, R.;
10:28:8 Surface oxygen vacancy origin of electron accumulation in indium oxide
DOI:10.1063/1.3604811 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Walsh, Aron;
10:28:9 Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment
DOI:10.1063/1.3583446 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Bierwagen, Oliver;Speck, James S.;Nagata, Takahiro;Chikyow, Toyohiro;Yamashita, Yoshiyuki;Yoshikawa, Hideki;Kobayashi, Keisuke;
10:28:10 Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide
DOI:10.1103/PhysRevB.83.161202 JN:PHYSICAL REVIEW B PY:2011
TC:15 AU: Walsh, Aron;Catlow, C. Richard A.;Zhang, K. H. L.;Egdell, Russell G.;
10:28:11 Schottky contacts to In2O3
DOI:10.1063/1.4870536 JN:APL MATERIALS PY:2014
TC:8 AU: von Wenckstern, H.;Splith, D.;Schmidt, F.;Grundmann, M.;Bierwagen, O.;Speck, J. S.;
10:28:12 Bulk and surface characterization of In2O3(001) single crystals
DOI:10.1103/PhysRevB.85.115441 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Hagleitner, Daniel R.;Menhart, Manfred;Jacobson, Peter;Blomberg, Sara;Schulte, Karina;Lundgren, Edvin;Kubicek, Markus;Fleig, Juergen;Kubel, Frank;Puls, Christoph;Limbeck, Andreas;Hutter, Herbert;Boatner, Lynn A.;Schmid, Michael;Diebold, Ulrike;
10:28:13 Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films
DOI:10.1063/1.3298467 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:23 AU: Nagata, Takahiro;Bierwagen, Oliver;White, Mark E.;Tsai, Min-Ying;Speck, James S.;
10:28:14 Microscopic Origin of Electron Accumulation in In2O3
DOI:10.1103/PhysRevLett.110.056803 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:9 AU: Zhang, K. H. L.;Egdell, R. G.;Offi, F.;Iacobucci, S.;Petaccia, L.;Gorovikov, S.;King, P. D. C.;
10:28:15 Size-Dependent Shape and Tilt Transitions in In2O3 Nanoislands Grown on Cubic Y-Stabilized ZrO2(001) by Molecular Beam Epitaxy
DOI:10.1021/nn301382j JN:ACS NANO PY:2012
TC:9 AU: Zhang, Kelvin H. L.;Bourlange, Anne;Egdell, Russell G.;Collins, Stephen P.;Bean, Richard J.;Robinson, Ian K.;Cowley, Roger A.;
10:28:16 XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films
DOI:10.1063/1.3596449 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Nagata, T.;Bierwagen, O.;White, M. E.;Tsai, M. Y.;Yamashita, Y.;Yoshikawa, H.;Ohashi, N.;Kobayashi, K.;Chikyow, T.;Speck, J. S.;
10:28:17 Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies
DOI:10.1063/1.4751854 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Bierwagen, Oliver;Speck, James S.;
10:28:18 Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)
DOI:10.1063/1.3415539 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Bierwagen, Oliver;Speck, James S.;
10:28:19 Role of a universal branch-point energy at ZnO interfaces
DOI:10.1103/PhysRevB.82.165310 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Allen, M. W.;Durbin, S. M.;
10:28:20 Method of choice for fabrication of high-quality ZnO-based Schottky diodes
DOI:10.1063/1.4901637 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Mueller, Stefan;von Wenckstern, Holger;Schmidt, Florian;Splith, Daniel;Heinhold, Robert;Allen, Martin;Grundmann, Marius;
10:28:21 Macro- and microscopic properties of strontium doped indium oxide
DOI:10.1063/1.4891216 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Nikolaenko, Y. M.;Kuzovlev, Y. E.;Medvedev, Y. V.;Mezin, N. I.;Fasel, C.;Gurlo, A.;Schlicker, L.;Bayer, T. J. M.;Genenko, Y. A.;
10:28:22 Melt growth, characterization and properties of bulk In2O3 single crystals
DOI:10.1016/j.jcrysgro.2011.10.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:16 AU: Galazka, Z.;Uecker, R.;Irmscher, K.;Schulz, D.;Klimm, D.;Albrecht, M.;Pietsch, M.;Ganschow, S.;Kwasniewski, A.;Fornari, R.;
10:28:23 A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method
DOI:10.1016/j.jcrysgro.2013.11.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Galazka, Zbigniew;Uecker, Reinhard;Fornari, Roberto;
10:28:24 Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface
DOI:10.1557/jmr.2012.172 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:9 AU: Bierwagen, Oliver;Nagata, Takahiro;White, Mark E.;Tsai, Min-Ying;Speck, James S.;
10:28:25 Determination of the Poisson ratio of (001) and (111) oriented thin films of In2O3 by synchrotron-based x-ray diffraction
DOI:10.1103/PhysRevB.84.233301 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Zhang, K. H. L.;Regoutz, A.;Palgrave, R. G.;Payne, D. J.;Egdell, R. G.;Walsh, A.;Collins, S. P.;Wermeille, D.;Cowley, R. A.;
10:28:26 Composition-dependent electronic properties of indium-zinc-oxide elongated microstructures
DOI:10.1016/j.actamat.2012.12.014 JN:ACTA MATERIALIA PY:2013
TC:8 AU: Bartolome, J.;Maestre, D.;Cremades, A.;Amatti, M.;Piqueras, J.;
10:28:27 A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron-based x-ray diffraction
DOI:10.1557/jmr.2012.162 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:2 AU: Regoutz, Anna;Zhang, Kelvin H. L.;Egdell, Russell G.;Wermeille, Didier;Cowley, Roger A.;
10:28:28 The effects of various annealing regimes on the microstructure and physical properties of ITO (In2O3:Sn) thin films deposited by electron beam evaporation for solar energy applications
DOI:10.1016/j.renene.2010.09.005 JN:RENEWABLE ENERGY PY:2011
TC:19 AU: Alves Cardoso Diniz, Antonia Sonia;
10:28:29 Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere
DOI:10.1063/1.4871810 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Nie, Man;Mete, Tayfun;Ellmer, Klaus;
10:28:30 Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering-A case study on indium oxide
DOI:10.1063/1.4863211 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Albrecht, M.;Schewski, R.;Irmscher, K.;Galazka, Z.;Markurt, T.;Naumann, M.;Schulz, T.;Uecker, R.;Fornari, R.;Meuret, S.;Kociak, M.;
10:28:31 Resonant photoemission at the O1s threshold to characterize In2O3 single crystals
DOI:10.1016/j.tsf.2013.03.036 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Haeberle, Joerg;Richter, Matthias;Galazka, Zbigniew;Janowitz, Christoph;Schmeisser, Dieter;
10:28:32 Tilting during island growth of In2O3 on Y-stabilized ZrO2(001) revealed by high-resolution x-ray diffraction
DOI:10.1103/PhysRevB.82.165312 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Cowley, R. A.;Bourlange, A.;Hutchison, J. L.;Zhang, K. H. L.;Korsunsky, A. M.;Egdell, R. G.;
10:28:33 Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD
DOI:10.1016/j.apsusc.2010.07.024 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Kong, Lingyi;Ma, Jin;Yang, Fan;Zhu, Zhen;Luan, Caina;Xiao, Hongdi;
10:28:34 Electronic structure of cobalt-nickel mixed oxides
DOI:10.1016/j.ssi.2012.06.009 JN:SOLID STATE IONICS PY:2012
TC:3 AU: Schmidt, Stephan;Schmeisser, Dieter;
10:28:35 Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD
DOI:10.1016/j.ceramint.2013.08.078 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Li, Zhao;Zhao, Cansong;Mi, Wei;Luan, Caina;Feng, Xianjin;Ma, Jin;
10:28:36 Oxygen-induced metal-insulator-transition on single crystalline metal oxide wires
DOI:10.1063/1.3675204 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Berengue, O. M.;Amorim, C. A.;Kamimura, H.;Chiquito, A. J.;Leite, E. R.;
10:28:37 Influence of temperature on the epitaxial growth of In2O3 thin films on Y-ZrO2(1 1 1)
DOI:10.1016/j.jcrysgro.2010.10.143 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Zhang, K. H. L.;Lazarov, V. K.;Lai, H. H. -C.;Egdell, R. G.;
10:28:38 Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.07.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:5 AU: Du, Xuejian;Mi, Wei;Luan, Caina;Li, Zhao;Xia, Changtai;Ma, Jin;
10:28:39 Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface (vol 27, pg 2232, 2012)
DOI:10.1557/jmr.2012.293 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:0 AU: Bierwagen, Oliver;Nagata, Takahiro;White, Mark E.;Tsai, Min-Ying;Speck, James S.;
10:28:40 A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron based x-ray diffraction (vol 27, pg 2257, 2012)
DOI:10.1557/jmr.2012.270 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:1 AU: Regoutz, Anna;Zhang, Kelvin H. L.;Egdell, Russell G.;Wermeille, Didier;Cowley, Roger A.;
10:28:41 Quasiparticle optoelectronic properties of pure and doped indium oxide
DOI:10.1016/j.optmat.2012.02.038 JN:OPTICAL MATERIALS PY:2012
TC:2 AU: Aliabad, H. A. Rahnamaye;Asadi, Y.;Ahmad, I.;
10:29:1 Hierarchical SnO2 Nanostructures: Recent Advances in Design, Synthesis, and Applications
DOI:10.1021/cm4018248 JN:CHEMISTRY OF MATERIALS PY:2014
TC:75 AU: Wang, Hongkang;Rogach, Andrey L.;
10:29:2 Nanoscale SnO2 Hollow Spheres and Their Application as a Gas-Sensing Material
DOI:10.1021/cm1011235 JN:CHEMISTRY OF MATERIALS PY:2010
TC:95 AU: Gyger, Fabian;Huebner, Michael;Feldmann, Claus;Barsan, Nicolae;Weimar, Udo;
10:29:3 Au nanoparticle-decorated porous SnO2 hollow spheres: a new model for a chemical sensor
DOI:10.1039/c0jm00457j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:79 AU: Zhang, Jun;Liu, Xianghong;Wu, Shihua;Xu, Mijuan;Guo, Xianzhi;Wang, Shurong;
10:29:4 Hydrothermal synthesis of hierarchical SnO2 microspheres for gas sensing and lithium-ion batteries applications: Fluoride-mediated formation of solid and hollow structures
DOI:10.1039/c1jm14839g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:48 AU: Wang, Hongkang;Fu, Fang;Zhang, Feihu;Wang, Hong-En;Kershaw, Stephen V.;Xu, Jiaqiang;Sun, Shi-Gang;Rogach, Andrey L.;
10:29:5 One-Step Preparation of SnO2 and Pt-Doped SnO2 As Inverse Opal Thin Films for Gas Sensing
DOI:10.1021/cm100866g JN:CHEMISTRY OF MATERIALS PY:2010
TC:50 AU: D'Arienzo, Massimiliano;Armelao, Lidia;Cacciamani, Adriana;Mari, Claudio Maria;Polizzi, Stefano;Ruffo, Riccardo;Scotti, Roberto;Testino, Andrea;Wahba, Laura;Morazzoni, Franca;
10:29:6 Gold nanoparticle doped hollow SnO2 supersymmetric nanostructures for improved photocatalysis
DOI:10.1039/c3ta01099f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:23 AU: You, Hongjun;Liu, Rui;Liang, Congcong;Yang, Shengchun;Wang, Fei;Lu, Xuegang;Ding, Bingjun;
10:29:7 Recent development of core-shell SnO2 nanostructures and their potential applications
DOI:10.1039/c4tc01030b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:7 AU: Kar, Arik;Patra, Amitava;
10:29:8 A Facile and Green Approach for the Controlled Synthesis of Porous SnO2 Nanospheres: Application as an Efficient Photocatalyst and an Excellent Gas Sensing Material
DOI:10.1021/am301840s JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:4 AU: Boppella, P. Manjula Ramireddy;Manorama, Sunkara V.;
10:29:9 Hybrid Organotin and Tin Oxide-based Thin Films Processed from Alkynylorganotins: Synthesis, Characterization, and Gas Sensing Properties
DOI:10.1021/am504723t JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Renard, Laetitia;Broetz, Joachim;Fuess, Hartmut;Gurlo, Aleksander;Riedel, Ralf;Toupance, Thierry;
10:29:10 Porous FTO thin layers created with a facile one-step Sn4+-based anodic deposition process and their potential applications in ion sensing
DOI:10.1039/c2jm33060a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:6 AU: Lee, Kuan-Ting;Lu, Shih-Yuan;
10:29:11 Synthesis of monodispersed SnO2 nanocrystals and their remarkably high sensitivity to volatile organic compounds
DOI:10.1021/cm100228d JN:CHEMISTRY OF MATERIALS PY:2010
TC:66 AU: Kida, Tetsuya;Doi, Takayuki;Shimanoe, Kengo;
10:29:12 Transparent Conducting Aerogels of Antimony-Doped Tin Oxide
DOI:10.1021/am505115x JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Baena, Juan Pablo Correa;Agrios, Alexander G.;
10:29:13 Synthesis of rattle-type SnO2 structures with porous shells
DOI:10.1039/c2jm32520a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:23 AU: Wang, Lili;Fei, Teng;Deng, Jianan;Lou, Zheng;Wang, Rui;Zhang, Tong;
10:29:14 Engineering of Facets, Band Structure, and Gas-Sensing Properties of Hierarchical Sn2+-Doped SnO2 Nanostructures
DOI:10.1002/adfm.201300303 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:31 AU: Wang, Hongkang;Dou, Kunpeng;Teoh, Wey Yang;Zhan, Yawen;Hung, Tak Fu;Zhang, Feihu;Xu, Jiaqiang;Zhang, Ruiqin;Rogach, Andrey L.;
10:29:15 Preparation, characterization and electrical properties of fluorine-doped tin dioxide nanocrystals
DOI:10.1016/j.jcis.2010.02.031 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:33 AU: Wu, Shanshan;Yuan, Shuai;Shi, Liyi;Zhao, Yin;Fang, Jianhui;
10:29:16 New Strategy to Prepare Hollow Silica Microspheres with Tunable Holes on the Shell Wall
DOI:10.1021/la404595r JN:LANGMUIR PY:2014
TC:5 AU: Wan, Hongri;Long, Yue;Xu, Hui;Song, Kai;Yang, Guoqiang;Tung, Chen-Ho;
10:29:17 Functionalized SnO2 nanobelt field-effect transistor sensors for label-free detection of cardiac troponin
DOI:10.1016/j.bios.2011.05.019 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:20 AU: Cheng, Yi;Chen, Kan-Sheng;Meyer, Nancy L.;Yuan, Jing;Hirst, Linda S.;Chase, P. Bryant;Xiong, Peng;
10:29:18 Facile Fabrication and Optical Property of Hollow SnO2 Spheres and Their Application in Water Treatment
DOI:10.1021/la103769d JN:LANGMUIR PY:2010
TC:46 AU: Shi, Liang;Lin, Hailin;
10:29:19 Nanoscale Dispersions of Gelled SnO2: Material Properties and Device Applications
DOI:10.1021/cm402462m JN:CHEMISTRY OF MATERIALS PY:2013
TC:3 AU: Bob, Brion;Song, Tze-Bin;Chen, Chun-Chao;Xu, Zheng;Yang, Yang;
10:29:20 Polyvinylpyrrolidone-Assisted Ultrasonic Synthesis of SnO Nanosheets and Their Use as Conformal Templates for Tin Dioxide Nanostructures
DOI:10.1021/la301827p JN:LANGMUIR PY:2012
TC:10 AU: Wang, Hongkang;Wang, Yu;Xu, Jun;Yang, Haihua;Lee, Chun-Sing;Rogach, Andrey L.;
10:29:21 Synthesis and optoelectrical properties of SnO2 nanospheres derived by microwave-assisted hydrothermal method
DOI:10.1007/s00339-014-8366-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Wang, Xin;Huang, Rong;Kong, Xiang Yang;
10:29:22 Porous Fluorinated SnO2 Hollow Nanospheres: Transformative Self-assembly and Photocatalytic Inactivation of Bacteria
DOI:10.1021/am4047975 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:20 AU: Liu, Shengwei;Huang, Guocheng;Yu, Jiaguo;Ng, Tsz Wai;Yip, Ho Yin;Wong, Po Keung;
10:29:23 3D hierarchical porous SnO2 derived from self-assembled biological systems for superior gas sensing application
DOI:10.1039/c1jm13440j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:25 AU: Song, Fang;Su, Huilan;Chen, Jianjun;Moon, Won-Jin;Lau, Woon Ming;Zhang, Di;
10:29:24 Ethanol-sensing performance of tin dioxide octahedral nanocrystals with exposed high-energy {111} and {332} facets
DOI:10.1039/c4ta00844h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:5 AU: Wang, Chenxia;Cai, Daoping;Liu, Bin;Li, Han;Wang, Dandan;Liu, Yuan;Wang, Lingling;Wang, Yanrong;Li, Qiuhong;Wang, Taihong;
10:29:25 High-temperature humidity sensors based on WO3-SnO2 composite hollow nanospheres
DOI:10.1039/c4ta00363b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:7 AU: Li, Han;Liu, Bin;Cai, Daoping;Wang, Yanrong;Liu, Yuan;Mei, Lin;Wang, Lingling;Wang, Dandan;Li, Qiuhong;Wang, Taihong;
10:29:26 Hydrothermal synthesis and luminescence properties of TiO2: Eu3+ submicrospheres
DOI:10.1016/j.ceratnint.2014.04.162 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Qi, Xiaofei;Zou, Haifeng;Song, Yanhua;Zhang, Hongguang;Zhao, Huan;Shi, Zhan;Sheng, Ye;
10:29:27 Composite photoanodes of Zn2SnO4 nanoparticles modified SnO2 hierarchical microspheres for dye-sensitized solar cells
DOI:10.1016/j.matlet.2012.02.110 JN:MATERIALS LETTERS PY:2012
TC:13 AU: Liu, Ming;Yang, Junyou;Feng, Shuanglong;Zhu, Hu;Zhang, Jiansheng;Li, Gen;Peng, Jiangying;
10:29:28 Synthesis of sub-5 nm Co-doped SnO2 nanoparticles and their structural, microstructural, optical and photocatalytic properties
DOI:10.1016/j.matchemphys.2014.05.032 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Entradas, T.;Cabrita, J. F.;Dalui, S.;Nunes, M. R.;Monteiro, O. C.;Silvestre, A. J.;
10:29:29 New Insights into the SnO2 Sensing Mechanism Based on the Properties of Shape Controlled Tin Oxide Nanoparticles
DOI:10.1021/cm401895x JN:CHEMISTRY OF MATERIALS PY:2013
TC:11 AU: D'Arienzo, Massimiliano;Cristofori, Davide;Scotti, Roberto;Morazzoni, Franca;
10:29:30 Preparation of Au-sensitized 3D hollow SnO2 microspheres with an enhanced sensing performance
DOI:10.1016/j.jallcom.2013.09.147 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Li, Yangen;Qiao, Liang;Yan, Dong;Wang, Lili;Zeng, Yi;Yang, Haibin;
10:29:31 Synthesis, UV response, and room-temperature ethanol sensitivity of undoped and Pd-doped coral-like SnO2
DOI:10.1007/s11051-013-1998-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Chunliang, Guo;Zhidong, Lin;Song, Wenlong;Wang, Xuehua;Huang, Yangyi;Wang, Ke;
10:29:32 Template-free synthesis of uniform mesoporous SnO2 nanospheres for efficient phosphopeptide enrichment
DOI:10.1039/c3tb21617a JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2014
TC:5 AU: Li, Liping;Chen, Shuai;Xu, Linnan;Bai, Yu;Nie, Zongxiu;Liu, Huwei;Qi, Limin;
10:29:33 SnO2 Nanoslab as NO2 Sensor: Identification of the NO2 Sensing Mechanism on a SnO2 Surface
DOI:10.1021/am404397f JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:8 AU: Maeng, Sunglyul;Kim, Sang-Woo;Lee, Deuk-Hee;Moon, Seung-Eon;Kim, Ki-Chul;Maiti, Amitesh;
10:29:34 Electrocatalytic properties of platinum nanoparticles supported on fluorine tin dioxide/multi-walled carbon nanotube composites for methanol electrooxidation in acidic medium
DOI:10.1016/j.jcis.2011.03.019 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:5 AU: Guo, Dao-Jun;Jing, Zhi-Hong;
10:29:35 Cooperativity between two selected RNA Pdases in the synthesis of Pd nanoparticles
DOI:10.1039/c0jm02050h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:5 AU: Rouge, Jessica L.;Ackerson, Christopher J.;Feldheim, Daniel L.;Eaton, Bruce E.;
10:30:1 Facile one-step synthesis and photoluminescence properties of Ag-ZnO core-shell structure
DOI:10.1016/j.jallcom.2014.02.092 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Zhai, HongJu;Wang, LiJing;Han, DongLai;Wang, Huan;Wang, Jian;Liu, XiaoYan;Lin, Xue;Li, XiuYan;Gao, Ming;Yang, JingHai;
10:30:2 Ag nanoparticle/ZnO nanorods nanocomposites derived by a seed-mediated method and their photocatalytic properties
DOI:10.1016/j.jallcom.2012.02.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:34 AU: Yin, Xingtian;Que, Wenxiu;Fei, Duan;Shen, Fengyu;Guo, Qiushi;
10:30:3 One-step microwave synthesis of Ag/ZnO nanocomposites with enhanced photocatalytic performance
DOI:10.1007/s10853-012-6676-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:18 AU: Sun, Fazhe;Qiao, Xueliang;Tan, Fatang;Wang, Wei;Qiu, Xiaolin;
10:30:4 Controlled morphologies and optical properties of ZnO films and their photocatalytic activities
DOI:10.1016/j.jallcom.2011.07.017 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Duan, Jingjing;Liu, Xiaoheng;Han, Qiaofeng;Wang, Xin;
10:30:5 Simple and large scale one-pot method for preparation of AgBr-ZnO nanocomposites as highly efficient visible light photocatalyst
DOI:10.1016/j.apsusc.2013.07.079 JN:APPLIED SURFACE SCIENCE PY:2013
TC:23 AU: Pirhashemi, Mahsa;Habibi-Yangjeh, Aziz;
10:30:6 Effect of Ag shapes and surface compositions on the photocatalytic performance of Ag/ZnO nanorods
DOI:10.1016/j.jallcom.2014.08.096 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Lu, Jia;Wang, Huihu;Dong, Shijie;Wang, Fanqiang;Dong, Yifan;
10:30:7 Facile synthesis of Ag/ZnO heterostructure nanocrystals with enhanced photocatalytic performance
DOI:10.1016/j.materresbull.2012.07.025 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:11 AU: Sun, Fazhe;Tan, Fatang;Wang, Wei;Qiao, Xueliang;Qiu, Xiaolin;
10:30:8 Polydopamine-assisted decoration of ZnO nanorods with Ag nanoparticles: an improved photoelectrochemical anode
DOI:10.1039/c3ta10499k JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:24 AU: Wei, Yuefan;Kong, Junhua;Yang, Liping;Ke, Lin;Tan, Hui Ru;Liu, Hai;Huang, Yizhong;Sun, Xiao Wei;Lu, Xuehong;Du, Hejun;
10:30:9 Ag Nanoparticle Decorated Nanoporous ZnO Microrods and Their Enhanced Photocatalytic Activities
DOI:10.1021/am301682g JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:57 AU: Deng, Quan;Duan, Xiaowei;Ng, Dickon H. L.;Tang, Haibin;Yang, Yong;Kong, Mingguang;Wu, Zhikun;Cai, Weiping;Wang, Guozhong;
10:30:10 Facile synthesis of Ag/ZnO heterostructures assisted by UV irradiation: Highly photocatalytic property and enhanced photostability
DOI:10.1016/j.materresbull.2011.06.016 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:28 AU: Yang, Zhongmei;Zhang, Ping;Ding, Yanhuai;Jiang, Yong;Long, Zhilin;Dai, Wenli;
10:30:11 One-pot synthesis of ZnO/Ag nanospheres with enhanced photocatalytic activity
DOI:10.1016/j.matlet.2009.11.026 JN:MATERIALS LETTERS PY:2010
TC:39 AU: Xie, Jinsong;Wu, Qingsheng;
10:30:12 Single-crystalline hetero structure of ZnO nanowire arrays on large Ag microplates and its photocatalytic activity
DOI:10.1016/j.actamat.2013.08.013 JN:ACTA MATERIALIA PY:2013
TC:1 AU: Chang, C. -W.;Wu, H. -T.;Huang, S. -H.;Chen, C. -K.;Un, I. -W.;Yen, T. -J.;
10:30:13 Improved photocatalytic activity of single crystal ZnO nanorod derived from highly effective P/N heterojunction
DOI:10.1016/j.materresbull.2013.05.037 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Yan, Xiaoyan;Gong, Changwei;Wang, Jian;Liang, Liping;Zhao, Li;Zhang, Mingang;Chai, Yuesheng;
10:30:14 Largely improved photocatalytic properties of Ag/tetrapod-like ZnO nanocompounds prepared with different PEG contents
DOI:10.1016/j.apsusc.2011.04.026 JN:APPLIED SURFACE SCIENCE PY:2011
TC:22 AU: Wang, J.;Fan, X. M.;Tian, K.;Zhou, Z. W.;Wang, Y.;
10:30:15 Structure and photoluminescence properties of Ag-coated ZnO nano-needles
DOI:10.1016/j.jallcom.2011.01.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:21 AU: Li, Xiaozhu;Wang, Yongqian;
10:30:16 Highly Efficient Room Temperature Synthesis of Silver-Doped Zinc Oxide (ZnO:Ag) Nanoparticles: Structural, Optical, and Photocatalytic Properties
DOI:10.1111/jace.12218 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:17 AU: Yildirim, Ozlem Altintas;Unalan, Husnu Emrah;Durucan, Caner;
10:30:17 Preparation of Ag nanoparticles coated tetrapod-like ZnO whisker photocatalysts using photoreduction
DOI:10.1016/j.mseb.2011.05.027 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:15 AU: Wang, J.;Fan, X. M.;Zhou, Z. W.;Tian, K.;
10:30:18 Fabrication of CuO/T-ZnOw nanocomposites using photo-deposition and their photocatalytic property
DOI:10.1016/j.apsusc.2011.10.048 JN:APPLIED SURFACE SCIENCE PY:2011
TC:20 AU: Wang, J.;Fan, X. M.;Wu, D. Z.;Dai, J.;Liu, H.;Liu, H. R.;Zhou, Z. W.;
10:30:19 Visible-light photocatalytic degradation of methylene blue with laser-induced Ag/ZnO nanoparticles
DOI:10.1016/j.apsusc.2011.10.134 JN:APPLIED SURFACE SCIENCE PY:2012
TC:32 AU: Whang, Thou-Jen;Hsieh, Mu-Tao;Chen, Huang-Han;
10:30:20 Shape-dependent localized surface plasmon enhanced photocatalytic effect of ZnO nanorods decorated with Ag
DOI:10.1016/j.ijhydene.2014.03.153 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:7 AU: Zhang, Xiaoli;Zhao, Junliang;Wang, Shuguo;Dai, Haitao;Sun, Xiaowei;
10:30:21 Stabilization of intrinsic defects at high temperatures in ZnO nanoparticles by Ag modification
DOI:10.1016/j.jcis.2011.09.065 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:22 AU: Sahu, Ranjan K.;Ganguly, K.;Mishra, T.;Mishra, M.;Ningthoujam, R. S.;Roy, S. K.;Pathak, L. C.;
10:30:22 Photocatalytic studies of Ag/ZnO nanocomposite particles produced via ultrasonic spray pyrolysis method
DOI:10.1016/j.jallcom.2013.10.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Dermenci, Kamil Burak;Genc, Bora;Ebin, Burcak;Olmez-Hanci, Tugba;Gurmen, Sebahattin;
10:30:23 Synthesis and photocatalytic properties of hierarchical metal nanoparticles/ZnO thin films hetero nanostructures assisted by diblock copolymer inverse micellar nanotemplates
DOI:10.1016/j.jcis.2010.01.040 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:25 AU: Jang, Yoon Hee;Kochuveedu, Saji Thomas;Cha, Min-Ah;Jang, Yu Jin;Lee, Ji Yong;Lee, Jieun;Lee, Juyon;Kim, Jooyong;Ryu, Du Yeol;Kim, Dong Ha;
10:30:24 Nanostructured microspheres of silver @ zinc oxide: an excellent impeder of bacterial growth and biofilm
DOI:10.1007/s11051-014-2717-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Patil, Santosh S.;Patil, Rajendra H.;Kale, Sheetal B.;Tamboli, Mohaseen S.;Ambekar, Jalindar D.;Gade, Wasudev N.;Kolekar, Sanjay S.;Kale, Bharat B.;
10:30:25 Synthesis of Ag-ZnO powders by means of a mechanochemical process
DOI:10.1007/s00339-014-8447-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Guzman, D.;Munoz, P.;Aguilar, C.;Iturriza, I.;Lozada, L.;Rojas, P. A.;Thirumurugan, M.;Martinez, C.;
10:30:26 Facile synthesis of Ag/ZnO microstructures with enhanced photocatalytic activity
DOI:10.1016/j.matlet.2010.04.033 JN:MATERIALS LETTERS PY:2010
TC:20 AU: Song, Caixia;Lin, Yusheng;Wang, Debao;Hu, Zhengshui;
10:30:27 Microwave-assisted synthesis and photocatalytic performance of Ag-doped hierarchical ZnO architectures
DOI:10.1016/j.matlet.2012.04.062 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Wang, Libo;Hu, Qianku;Li, Zhengyang;Guo, Jinyu;Li, Yanwei;
10:30:28 Synthesis of micro-nano heterostructure AgBr/ZnO composite for advanced visible light photocatalysis
DOI:10.1016/j.matlet.2014.04.190 JN:MATERIALS LETTERS PY:2014
TC:9 AU: Dai, Kai;Lv, Jiali;Lu, Luhua;Liu, Qi;Zhu, Guangping;Li, Dongpei;
10:30:29 A twice liquid arc discharge approach for synthesis of visible-light-active nanocrystalline Ag:ZnO photocatalyst
DOI:10.1007/s00339-012-6797-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:10 AU: Ashkarran, Ali Akbar;
10:30:30 Growth and characterization of flower-like Ag/ZnO heterostructure composites with enhanced photocatalytic performance
DOI:10.1007/s10853-013-7935-z JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:6 AU: Zhang, Zhenfei;Li, Yong;Li, Kefeng;Chen, Kai;Yang, Yongzhen;Liu, Xuguang;Jia, Husheng;Xu, Bingshe;
10:30:31 A scalable synthesis technique of novel AgBr microcrystal and its visible light photocatalytic performance
DOI:10.1016/j.matlet.2012.07.074 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Dai, Kai;Lu, Luhua;Zhu, Guangping;Liu, Zhongliang;Liu, Qinzhuang;Chen, Zheng;
10:30:32 Synthesis of Cu2O/T-ZnOw nanocompound and characterization of its photocatalytic activity and stability property under UV irradiation
DOI:10.1016/j.mseb.2012.10.041 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:6 AU: Liu, H.;Wang, J.;Fan, X. M.;Zhang, F. Z.;Liu, H. R.;Dai, J.;Xiang, F. M.;
10:30:33 Ultraviolet photosensors fabricated with Ag nanowires coated with ZnO nanoparticles
DOI:10.1016/j.tsf.2014.04.056 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Shen, Guan-Hung;Hong, Franklin Chau-Nan;
10:30:34 Visible light responsive photocatalytic ZnO:Al films decorated with Ag nanoparticles
DOI:10.1016/j.tsf.2013.10.059 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Bizarro, M.;Martinez-Padilla, E.;
10:30:35 Improving dispersion of SnO2 nanoparticles in Ag-SnO2 electrical contact materials using template method
DOI:10.1016/j.jallcom.2013.03.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Cosovic, Vladan;Cosovic, Aleksandar;Talijan, Nadezda;Zivkovic, Dragana;Manasijevic, Dragan;Minic, Dusko;
10:30:36 Study of the Photocatalytic Activity of Na and Al-doped ZnO Powders
DOI:10.1080/00150193.2013.845068 JN:FERROELECTRICS PY:2013
TC:1 AU: Wu Xiaoliang;Ding Shihua;Peng Yong;Xu Qin;Lu Yun;
10:30:37 Production and characterization of nanocomposite thin films based on Ni matrix reinforced with SnO2 single-crystalline nanowires for electrical contact applications
DOI:10.1016/j.jallcom.2014.03.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Miguel, F. L.;Mueller, R.;Weinmann, M.;Hempelmann, R.;Mathur, S.;Muecklich, F.;
10:30:38 Effects of silver deposition on 405 nm light-driven zinc oxide photocatalyst
DOI:10.1116/1.3268133 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:5 AU: Seki, Shigeyuki;Sekizawa, Takumi;Haga, Koichi;Sato, Tomoaki;Takeda, Mitsuhiro;Seki, Yoshiyuki;Sawada, Yutaka;Yubuta, Kunio;Shishido, Toetsu;
10:31:1 Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering
DOI:10.1063/1.3291106 JN:APPLIED PHYSICS LETTERS PY:2010
TC:74 AU: Liu, K. W.;Chen, R.;Xing, G. Z.;Wu, T.;Sun, H. D.;
10:31:2 Synthesis and conductivity enhancement of Al-doped ZnO nanorod array thin films
DOI:10.1088/0957-4484/21/28/285603 JN:NANOTECHNOLOGY PY:2010
TC:42 AU: Hsu, Chih-Hsiung;Chen, Dong-Hwang;
10:31:3 Behind the change of the photoluminescence property of metal-coated ZnO nanowire arrays
DOI:10.1063/1.3543902 JN:APPLIED PHYSICS LETTERS PY:2011
TC:41 AU: Fang, Y. J.;Sha, J.;Wang, Z. L.;Wan, Y. T.;Xia, W. W.;Wang, Y. W.;
10:31:4 On the origin of enhanced photoconduction and photoluminescence from Au and Ti nanoparticles decorated aligned ZnO nanowire heterostructures
DOI:10.1063/1.3671023 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:21 AU: Dhara, Soumen;Giri, P. K.;
10:31:5 Effects of Annealing Environments on the Solution-Grown, Aligned Aluminium-Doped Zinc Oxide Nanorod-Array-Based Ultraviolet Photoconductive Sensor
DOI:10.1155/2012/189279 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:4 AU: Mamat, Mohamad Hafiz;Khalin, Mohd Izzudin Che;Mohammad, Nik Noor Hafizah Nik;Khusaimi, Zuraida;Sin, Nor Diyana Md;Shariffudin, Shafinaz Sobihana;Zahidi, Musa Mohamed;Mahmood, Mohamad Rusop;
10:31:6 Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate
DOI:10.1063/1.4767679 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Shao, Dali;Yu, Mingpeng;Lian, Jie;Sawyer, Shayla;
10:31:7 Exciton Localization and Optical Properties Improvement in Nanocrystal-Embedded ZnO Core-Shell Nanowires
DOI:10.1021/nl304433m JN:NANO LETTERS PY:2013
TC:19 AU: Chen, Rui;Ye, Quan-Lin;He, Tingchao;Van Duong Ta;Ying, Yongjun;Tay, Yee Yan;Wu, Tom;Sun, Handong;
10:31:8 Uniaxial tensile strain and exciton-phonon coupling in bent ZnO nanowires
DOI:10.1063/1.3601479 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Chen, Rui;Ye, Quan-Lin;He, T. C.;Wu, T.;Sun, H. D.;
10:31:9 Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps
DOI:10.1088/0957-4484/22/20/205204 JN:NANOTECHNOLOGY PY:2011
TC:35 AU: Park, Woojin;Jo, Gunho;Hong, Woong-Ki;Yoon, Jongwon;Choe, Minhyeok;Lee, Sangchul;Ji, Yongsung;Kim, Geunjin;Kahng, Yung Ho;Lee, Kwanghee;Wang, Deli;Lee, Takhee;
10:31:10 Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure
DOI:10.1063/1.4776691 JN:APPLIED PHYSICS LETTERS PY:2013
TC:11 AU: Shao, Dali;Yu, Mingpeng;Lian, Jie;Sawyer, Shayla;
10:31:11 Enhanced Photoluminescence and Photoconductivity of ZnO Nanowires with Sputtered Zn
DOI:10.1021/am1006047 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:29 AU: Bera, A.;Ghosh, T.;Basak, D.;
10:31:12 Pd-nanoparticle-decorated ZnO nanowires: ultraviolet photosensitivity and photoluminescence properties
DOI:10.1088/0957-4484/22/26/265501 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Bera, Ashok;Basak, Durga;
10:31:13 An ultraviolet photodetector fabricated from WO3 nanodiscs/reduced graphene oxide composite material
DOI:10.1088/0957-4484/24/29/295701 JN:NANOTECHNOLOGY PY:2013
TC:11 AU: Shao, Dali;Yu, Mingpeng;Lian, Jie;Sawyer, Shayla;
10:31:14 Surface Passivation Effect on the Photoluminescence of ZnO Nanorods
DOI:10.1021/am401418b JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:18 AU: Chen, Cong;He, Haiping;Lu, Yangfan;Wu, Kewei;Ye, Zhizhen;
10:31:15 The surface-plasmon- resonance and band bending effects on the photoluminescence enhancement of Ag-decorated ZnO nanorods
DOI:10.1063/1.4892874 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Su, Li;Qin, Ni;Xie, Wei;Fu, Jianhui;Bao, Dinghua;
10:31:16 Optoelectronic properties of three dimensional WO3 nanoshale and its application for UV sensing
DOI:10.1016/j.optmat.2014.01.010 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Shao, Dali;Yu, Mingpeng;Lian, Jie;Sawyer, Shayla;
10:31:17 ZnO/anthracene based inorganic/organic nanowire heterostructure: Photoresponse and photoluminescence studies
DOI:10.1063/1.3687936 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Dhara, Soumen;Giri, P. K.;
10:31:18 Enhanced ultraviolet sensitivity of zinc oxide nanoparticle photoconductors by surface passivation
DOI:10.1016/j.optmat.2010.09.020 JN:OPTICAL MATERIALS PY:2011
TC:23 AU: Qin, Liqiao;Shing, Christopher;Sawyer, Shayla;Dutta, Partha S.;
10:31:19 Enhanced Ultraviolet Emission from Poly(vinyl alcohol) ZnO Nanoparticles Using a SiO2-Au Core/Shell Structure
DOI:10.1021/nl3031955 JN:NANO LETTERS PY:2012
TC:19 AU: Shao, Dali;Sun, Hongtao;Yu, Mingpeng;Lian, Jie;Sawyer, Shayla;
10:31:20 Aluminum doped core-shell ZnO/ZnS nanowires: Doping and shell layer induced modification on structural and photoluminescence properties
DOI:10.1063/1.4824288 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Dhara, Soumen;Imakita, Kenji;Giri, P. K.;Mizuhata, Minoru;Fujii, Minoru;
10:31:21 Effect of ZnO seed layer on the catalytic growth of vertically aligned ZnO nanorod arrays
DOI:10.1016/j.matchemphys.2010.02.027 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:15 AU: Giri, P. K.;Dhara, Soumen;Chakraborty, Ritun;
10:31:22 Highly efficient ultraviolet photodetection in nanocolumnar RF sputtered ZnO films: a comparison between sputtered, sol-gel and aqueous chemically grown nanostructures
DOI:10.1088/0957-4484/21/37/375202 JN:NANOTECHNOLOGY PY:2010
TC:17 AU: Ghosh, T.;Basak, D.;
10:31:23 Tunable device properties of free-standing inorganic/organic flexible hybrid structures obtained by exfoliation
DOI:10.1063/1.4729550 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Shetty, Amitha;Nanda, Karuna Kar;
10:31:24 Violet Emission in ZnO Nanorods Treated with High-Energy Hydrogen Plasma
DOI:10.1021/am403133u JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:3 AU: Chen, Cong;Lu, Yangfan;He, Haiping;Xiao, Mu;Wang, Zheng;Chen, Lingxiang;Ye, Zhizhen;
10:31:25 High quality ZnO-TiO2 core-shell nanowires for efficient ultraviolet sensing
DOI:10.1016/j.apsusc.2014.06.182 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Shao, Dali;Sun, Hongtao;Xin, Guoqing;Lian, Jie;Sawyer, Shayla;
10:31:26 Ultraintense Short-Wavelength Emission from ZnO-Sheathed MgO Nanorods Induced by Subwavelength Optical Resonance Cavity Formation: Verification of Previous Hypothesis
DOI:10.1021/am2014794 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:7 AU: Jin, Changhyun;Kim, Hyunsu;Lee, Chongmu;
10:31:27 Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments
DOI:10.1063/1.4893550 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Simimol, A.;Manikandanath, N. T.;Anappara, Aji A.;Chowdhury, Prasanta;Barshilia, Harish C.;
10:31:28 ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor
DOI:10.1007/s11664-013-2572-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Dhingra, Mansi;Shrivastava, Sadhna;Kumar, P. Senthil;Annapoorni, S.;
10:31:29 Strong Enhancement of Near-Band-Edge Photoluminescence of ZnO Nanowires Decorated with Sputtered Metallic Nanoparticles
DOI:10.1007/s11664-013-2924-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Purahmad, Mohsen;Stroscio, Michael A.;Dutta, Mitra;
10:31:30 ZnO quantum dots-graphene composite for efficient ultraviolet sensing
DOI:10.1016/j.matlet.2013.09.031 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Shao, Dali;Sun, Xiang;Xie, Ming;Sun, Hongtao;Lu, Fengyuan;George, Steven M.;Lian, Jie;Sawyer, Shayla;
10:31:31 Enhanced photoconduction of free-standing ZnO nanowire films by L-lysine treatment
DOI:10.1088/0957-4484/21/48/485504 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Liu, Jinzhang;Park, Jaeku;Park, Kyung Ho;Ahn, Yeonghwan;Park, Ji-Yong;Koh, Ken Ha;Lee, Soonil;
10:31:32 High-Performance Ultraviolet Photodetector Based on Organic-Inorganic Hybrid Structure
DOI:10.1021/am504090e JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Shao, Dali;Yu, Mingpeng;Sun, Hongtao;Xin, Guoqing;Lian, Jie;Sawyer, Shayla;
10:31:33 Optical properties of polyvinyl alcohol (PVA) coated In2O3 nanoparticles
DOI:10.1016/j.optmat.2012.10.026 JN:OPTICAL MATERIALS PY:2013
TC:7 AU: Shao, Dali;Qin, Liqiao;Sawyer, Shayla;
10:31:34 Wavelength selective p-GaN/ZnO colloidal nanoparticle heterojunction photodiode
DOI:10.1063/1.4793210 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Qin, Liqiao;Shao, Dali;Shing, Christopher;Sawyer, Shayla;
10:31:35 ZnO Nanostructures Grown onto Polypyrrole Films Prepared in Swollen Liquid Crystals via Integrative Chemistry
DOI:10.1021/cm902770d JN:CHEMISTRY OF MATERIALS PY:2010
TC:5 AU: Lee, Dong Un;Pradhan, Debabrata;Mouawia, Rola;Oh, Doo Hwan;Heinig, Nina F.;Leung, Kam Tong;Prouzet, Eric;
10:31:36 Structural properties of ZnO nanowires directly grown on a carbon film in ZnCl2 aqueous solution
DOI:10.1016/j.jcrysgro.2014.08.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Choi, Hyung Woo;Theodore, N. David;Das, Sayantan;Dhar, Aritra;Alford, T. L.;
10:31:37 Nanocoral ZnO films fabricated on flexible poly(vinyl chloride) using a carrier substrate
DOI:10.1016/j.tsf.2013.10.127 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Borysiewicz, Michal A.;Wojciechowski, Tomasz;Dynowska, Elzbieta;Wielgus, Maciej;Bar, Jan;Wojtowicz, Tomasz;Kaminska, Eliana;Piotrowska, Anna;
10:31:38 Effect of seed layer on the self assembly of spray pyrolyzed Al-doped ZnO nanoparticles
DOI:10.1063/1.4795762 JN:AIP ADVANCES PY:2013
TC:3 AU: Dwivedi, Charu;Dutta, V.;
10:31:39 Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality
DOI:10.1063/1.4884611 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Hou, Dongchao;Voss, Tobias;Ronning, Carsten;Menzel, Andreas;Zacharias, Margit;
10:31:40 Detailed understanding of the excitation-intensity dependent photoluminescence of ZnO materials: Role of defects
DOI:10.1063/1.4881779 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Rao, T. Prasada;Goswami, G. K.;Nanda, K. K.;
10:31:41 Effects of annealing on the photoluminescence of ZnSe nanorods coated with Au
DOI:10.1016/j.matchemphys.2013.10.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Park, Sunghoon;An, Soyeon;Ko, Hyunsung;Lee, Chongmu;
10:32:1:1 Structural, electronic band transition and optoelectronic properties of delafossite CuGa1-xCrxO2 (0 <= x <= 1) solid solution films grown by the sol-gel method
DOI:10.1039/c2jm33027j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Han, Meijie;Jiang, Kai;Zhang, Jinzhong;Yu, Wenlei;Li, Yawei;Hu, Zhigao;Chu, Junhao;
10:32:1:2 Electronic transition and electrical transport properties of delafossite CuCr1-xMgxO2 (0 <= x <= 12%) films prepared by the sol-gel method: A composition dependence study
DOI:10.1063/1.4827856 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Han, M. J.;Duan, Z. H.;Zhang, J. Z.;Zhang, S.;Li, Y. W.;Hu, Z. G.;Chu, J. H.;
10:32:1:3 Temperature-dependent band gap, interband transitions, and exciton formation in transparent p-type delafossite CuCr1-xMgxO2 films
DOI:10.1103/PhysRevB.90.035308 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Li, Xurui;Han, Meijie;Zhang, Xiaolong;Shan, Chao;Hu, Zhigao;Zhu, Ziqiang;Chu, Junhao;
10:32:1:4 Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1-xMgxO2 semiconductor films
DOI:10.1063/1.4860994 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Li, X. R.;Han, M. J.;Chang, P.;Hu, Z. G.;Li, Y. W.;Zhu, Z. Q.;Chu, J. H.;
10:32:1:5 Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy
DOI:10.1063/1.4768726 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Shin, D.;Foord, J. S.;Egdell, R. G.;Walsh, A.;
10:32:1:6 Structural, optical and electrical properties of Mg-doped CuCrO2 thin films by sol-gel processing
DOI:10.1016/j.jallcom.2011.02.175 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:18 AU: Wang, Yunfeng;Gu, Yijing;Wang, Tao;Shi, Wangzhou;
10:32:1:7 Raman spectroscopy and field emission characterization of delafossite CuFeO2
DOI:10.1063/1.3284160 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:21 AU: Pavunny, Shojan P.;Kumar, Ashok;Katiyar, R. S.;
10:32:1:8 Temperature dependent phonon evolutions and optical properties of highly c-axis oriented CuGaO2 semiconductor films grown by the sol-gel method
DOI:10.1063/1.3641477 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Han, M. J.;Jiang, K.;Zhang, J. Z.;Li, Y. W.;Hu, Z. G.;Chu, J. H.;
10:32:1:9 Structural and physical effects of Mg-doping on p-type CuCrO2 and CuAl0.5Cr0.5O2 thin films
DOI:10.1039/b926424h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:21 AU: Bywalez, Robert;Goetzendoerfer, Stefan;Loebmann, Peer;
10:32:1:10 Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature
DOI:10.1063/1.4903733 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Li, X. R.;Han, M. J.;Wu, J. D.;Shan, C.;Hu, Z. G.;Zhu, Z. Q.;Chu, J. H.;
10:32:1:11 Room temperature deposited p-channel amorphous Cu1-xCrxO2-delta thin film transistors
DOI:10.1016/j.apsusc.2014.07.107 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Sanal, K. C.;Jayaraj, M. K.;
10:32:1:12 Electronic structure of the hole-doped delafossite oxides CuCr1-xMgxO2
DOI:10.1103/PhysRevB.87.195124 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Yokobori, T.;Okawa, M.;Konishi, K.;Takei, R.;Katayama, K.;Oozono, S.;Shinmura, T.;Okuda, T.;Wadati, H.;Sakai, E.;Ono, K.;Kumigashira, H.;Oshima, M.;Sugiyama, T.;Ikenaga, E.;Hamada, N.;Saitoh, T.;
10:32:1:13 Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2011.01.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Kim, Se-Yun;Sung, Sang-Yun;Jo, Kwang-Min;Lee, Joon-Hyung;Kim, Jeong-Joo;Pearton, S. J.;Norton, D. P.;Heo, Young-Woo;
10:32:2:1 Characterization and optoelectronic properties of sol-gel-derived CuFeO2 thin films
DOI:10.1016/j.tsf.2012.03.032 JN:THIN SOLID FILMS PY:2012
TC:14 AU: Chen, Hong-Ying;Wu, Jia-Hao;
10:32:2:2 Electronic structure of the delafossite-type CuMO2 (M = Sc, Cr, Mn, Fe, and Co): Optical absorption measurements and first-principles calculations
DOI:10.1103/PhysRevB.84.041411 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Hiraga, Hiroki;Makino, Takayuki;Fukumura, Tomoteru;Weng, Hongming;Kawasaki, Masashi;
10:32:2:3 Task-specific ionic liquid as a new green inhibitor of mild steel corrosion
DOI:10.1016/j.apsusc.2013.10.017 JN:APPLIED SURFACE SCIENCE PY:2014
TC:10 AU: Kowsari, E.;Payami, M.;Amini, R.;Ramezanzadeh, B.;Javanbakht, M.;
10:32:2:4 Transparent conductive CuFeO2 thin films prepared by sol-gel processing
DOI:10.1016/j.apsusc.2012.01.022 JN:APPLIED SURFACE SCIENCE PY:2012
TC:20 AU: Chen, Hong-Ying;Wu, Jia-Hao;
10:32:2:5 Delafossite-CuFeO2 thin films prepared by atmospheric pressure plasma annealing
DOI:10.1016/j.matlet.2014.01.017 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Chen, Hong-Ying;Fu, Jun-Rong;
10:32:2:6 Chemical solution deposition and transport properties of epitaxial CuFeO2 thin films
DOI:10.1016/j.matlet.2011.07.018 JN:MATERIALS LETTERS PY:2011
TC:11 AU: Zhang, Li;Li, Ping;Huang, Kai;Tang, Zhen;Liu, Guohong;Li, Yibao;
10:32:2:7 Characterization of crednerite-Cu1.1Mn0.9O2 films prepared using sol-gel processing
DOI:10.1016/j.apsusc.2013.11.021 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Chen, Hong-Ying;Hsu, Da-Je;
10:32:2:8 X-ray photoelectron spectroscopy studies the cation valencies and distributions in crednerite-Cu1.1Mn0.9O2 thin films
DOI:10.1016/j.jallcom.2014.02.018 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Chen, Hong-Ying;Hsu, Da-Je;
10:32:2:9 First-principle study on O-A-O dumbbell of delafossite crystal
DOI:10.1016/j.jallcom.2013.08.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Jiang, H. F.;Gui, C. Y.;Zhu, Y. Y.;Wu, D. J.;Sun, S. P.;Xiong, C.;Zhu, X. B.;
10:32:2:10 In situ high-temperature X-ray and neutron diffraction of Cu-Mn oxide phases
DOI:10.1007/s10853-009-4042-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:9 AU: Wei, Ping;Bieringer, Mario;Cranswick, Lachlan M. D.;Petric, Anthony;
10:32:3:1 Evidence of room temperature ferromagnetism in Co-doped transparent CuAlO2 semiconductor
DOI:10.1016/j.jallcom.2011.09.062 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:13 AU: Dong, C. J.;Yu, W. X.;Xu, M.;Cao, J. J.;Zhang, Y.;Chuai, Y. H.;Wang, Y. D.;
10:32:3:2 Magnetic, electrical and optical properties of p-type Fe-doped CuCrO2 semiconductor thin films
DOI:10.1016/j.jallcom.2013.07.160 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Lin, Fangting;Gao, Cai;Zhou, Xiaoshan;Shi, Wangzhou;Liu, Aiyun;
10:32:3:3 Synthesis, structural and magnetic studies of the CuCr1-xCoxO2 delafossite oxide
DOI:10.1016/j.jmmm.2012.10.037 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:6 AU: Elkhouni, T.;Amami, M.;Colin, C. V.;Strobel, P.;Ben Salah, A.;
10:32:3:4 Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal technique
DOI:10.1063/1.3575316 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Chen, Weibing;Li, Jingbo;
10:32:3:5 Structural, electrical, optical and magnetic properties of p-type Cu(Cr1-xMnx)O-2 thin films prepared by pulsed laser deposition
DOI:10.1016/j.jallcom.2014.06.127 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Zhou, Xiaoshan;Lin, Fangting;Shi, Wangzhou;Liu, Aiyun;
10:32:3:6 Metal transition doping effect on the structural and physical properties of delafossite-type oxide CuCrO2
DOI:10.1016/j.jallcom.2011.04.153 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Jlaiel, F.;Amami, M.;Boudjada, N.;Strobel, P.;Ben Salah, A.;
10:32:3:7 Enhanced magnetic and ferroelectric properties of multiferroic CuCrO2 by Ni-doping
DOI:10.1016/j.tsf.2010.03.127 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Luo, Shijun;Li, L.;Wang, K. F.;Li, S. Z.;Dong, X. W.;Yan, Z. B.;Liu, J. -M.;
10:32:3:8 The structure, Raman spectroscopy and evidence of ferromagnetic transition in CuCr1-xMxO2 (M=Mn and Rh) compounds
DOI:10.1016/j.jmmm.2013.12.004 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:1 AU: Elkhouni, T.;Amami, M.;Colin, C. V.;Strobel, P.;Ben Salah, A.;
10:32:4:1 Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol-gel method
DOI:10.1016/j.jallcom.2013.06.155 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Deng, Zanhong;Fang, Xiaodong;Wu, Suzhen;Zhao, Yiping;Dong, Weiwei;Shao, Jingzhen;Wang, Shimao;
10:32:4:2 Improving the electrical conductivity of CuCrO2 thin film by N doping
DOI:10.1016/j.apsusc.2010.01.094 JN:APPLIED SURFACE SCIENCE PY:2010
TC:14 AU: Dong, Guobo;Zhang, Ming;Zhao, Xueping;Yan, Hui;Tian, Chunyu;Ren, Yonggang;
10:32:4:3 Structural and physical properties of the (Ca, Mg)-doped delafossite powder CuGaO2
DOI:10.1016/j.materresbull.2012.11.103 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:4 AU: Jlaiel, F.;Elkhouni, T.;Amami, M.;Strobel, P.;Ben Salah, A.;
10:32:4:4 Characterization of transparent conductive delafossite-CuCr1-O-x(2) films
DOI:10.1016/j.apsusc.2013.02.038 JN:APPLIED SURFACE SCIENCE PY:2013
TC:11 AU: Chen, Hong-Ying;Chang, Kuei-Ping;Yang, Chun-Chao;
10:32:4:5 Electronic properties of bivalent cations (Be, Mg and Ca) substitution for Al in delafossite CuAlO2 semiconductor by first-principles calculations
DOI:10.1016/j.jallcom.2012.11.101 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Jiang, Haifeng;Wang, Xiancai;Zang, Xueping;Wu, Weifeng;Sun, Shunping;Xiong, Chao;Yin, Weiwei;Gui, Chuanyou;Zhu, Xuebin;
10:32:4:6 Preparation of delafossite CuFeO2 coral-like powder using a self-combustion glycine nitrate process
DOI:10.1016/j.ceramint.2012.10.138 JN:CERAMICS INTERNATIONAL PY:2013
TC:4 AU: Chiu, Te-Wei;Huang, Ping-Shuo;
10:32:5:1 Thermoelectric properties of Cu1-xPtxFeO2 (0.0 <= x <= 0.05) delafossite-type transition oxide
DOI:10.1016/j.jallcom.2011.01.113 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:18 AU: Ruttanapun, Chesta;Wichainchai, Aree;Prachamon, Wutthisak;Yangthaisong, Anucha;Charoenphakdee, Anek;Seetawan, Tosawat;
10:32:5:2 Characterization of delafossite-type CuCoO2 prepared by ion exchange
DOI:10.1016/j.jallcom.2009.09.124 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Beekman, M.;Salvador, J.;Shi, X.;Nolas, G. S.;Yang, J.;
10:32:5:3 High-throughput calculations of alloyed delafossite materials: Application to CuGa1-xFexO2
DOI:10.1016/j.commatsci.2014.01.024 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Haycock, Barry J.;Rice, M. Kylee;Lewis, James P.;
10:32:5:4 Preparation, Characterization and Finite Element Computation of Cu(Al1/2Fe1/2)O-2 Delafossite-Oxide Themoelectric Generator Module
DOI:10.1080/10584587.2014.906837 JN:INTEGRATED FERROELECTRICS PY:2014
TC:2 AU: Ruttanapun, Chesta;Jindajitawat, Phumin;Buranasiri, Prathan;Naenkieng, Daengdesh;Boonyopakorn, Narongchai;Harnwunggmoung, Adul;Thowladda, Warawoot;Neeyakorn, Worakarn;Thanachayanont, Chanchana;Charoenphakdee, Anek;
10:32:5:5 Effects of mechanical milling on preparation and properties of CuAl1-xFexO2 thermoelectric ceramics
DOI:10.1016/j.ceramint.2011.12.079 JN:CERAMICS INTERNATIONAL PY:2012
TC:2 AU: Liou, Yi-Cheng;Chang, Li-Shin;Lu, Yang-Ming;Tsai, Hong-Chou;Lee, Uang-Ru;
10:32:5:6 The effect of electronic structure changes in NaInO2 and NaIn0.9Fe0.1O2 on the photoreduction of methylene blue
DOI:10.1039/c4ta00906a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:1 AU: Lekse, Jonathan W.;Haycock, Barry J.;Lewis, James P.;Kauffman, Douglas R.;Matranga, Christopher;
10:32:6:1 Effect of Ca-doping on the structural and electrical properties of CuY1-xCaxO2 (0 <= x <= 0.10) ceramics
DOI:10.1016/j.jallcom.2011.01.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Deng, Zanhong;Fang, Xiaodong;Tao, Ruhua;Dong, Weiwei;Zhou, Shu;Meng, Gang;Shao, Jingzhen;
10:32:6:2 P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application
DOI:10.1016/j.jallcom.2011.09.067 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Zhao, Yiping;Dong, Weiwei;Fang, Xiaodong;Zhou, Yikai;Meng, Gang;Tao, Ruhua;Deng, Zanhong;Zhou, Shu;Dai, Songyuan;
10:32:6:3 Effects of Mg substitution on the structural, optical, and electrical properties of CuAlO2 thin films
DOI:10.1016/j.jallcom.2010.10.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Jiang, H. F.;Zhu, X. B.;Lei, H. C.;Li, G.;Yang, Z. R.;Song, W. H.;Dai, J. M.;Sun, Y. P.;Fu, Y. K.;
10:32:6:4 Cationic doping effect on the structural, magnetic and spectroscopic properties of delafossite oxides CuCr1-x(Sc,Mg)(x)O-2
DOI:10.1016/j.matchemphys.2011.03.021 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Amami, M.;Smari, S.;Tayeb, K.;Strobel, P.;Ben Salah, A.;
10:32:6:5 Synthesis, structural and magnetic studies of the CuCr1-xRhxO2 delafossite solid solution with 0 <= x <= 0.2
DOI:10.1016/j.materresbull.2011.05.033 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:11 AU: Amami, M.;Jlaiel, F.;Strobel, P.;Ben Salah, A.;
10:32:6:6 Structural and magnetoelectric interactions of (Ca, Mg)-doped polycrystalline multiferroic CuFeO2
DOI:10.1016/j.materresbull.2014.01.035 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Elkhouni, T.;Amami, M.;Colin, C. V.;Ben Salah, A.;
10:32:7:1 Preparation of delafossite-type CuCrO2 films by sol-gel method
DOI:10.1016/j.jallcom.2011.02.149 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Wang, Jinmei;Zheng, Peichao;Li, Da;Deng, Zanhong;Dong, Weiwei;Tao, Ruhua;Fang, Xiaodong;
10:32:7:2 Characterization of delafossite-CuCrO2 thin films prepared by post-annealing using an atmospheric pressure plasma torch
DOI:10.1016/j.apsusc.2012.05.090 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Chen, Hong-Ying;Yang, Wei-Jung;Chang, Kuei-Ping;
10:32:7:3 Optical, electrical properties, characterization and synthesis of Ca2Co2O5 by sucrose assisted sol gel combustion method
DOI:10.1016/j.apt.2014.01.006 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:1 AU: Agilandeswari, K.;Kumar, A. Ruban;
10:33:1 ZnO and TiO2 1D nanostructures for photocatalytic applications
DOI:10.1016/j.jallcom.2010.10.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:42 AU: Guo, M. Y.;Fung, M. K.;Fang, F.;Chen, X. Y.;Ng, A. M. C.;Djurisic, A. B.;Chan, W. K.;
10:33:2 Solvothermal synthesis of Cr-doped ZnO nanowires with visible light-driven photocatalytic activity
DOI:10.1016/j.matlet.2011.03.070 JN:MATERIALS LETTERS PY:2011
TC:46 AU: Wu, Changle;Shen, Li;Zhang, Yong-Cai;Huang, Qingli;
10:33:3 Synthesis of N-doped ZnO nanoparticles with improved photocatalytical activity
DOI:10.1016/j.ceramint.2012.12.018 JN:CERAMICS INTERNATIONAL PY:2013
TC:11 AU: Sun, Shibin;Chang, Xueting;Li, Xiujuan;Li, Zhenjiang;
10:33:4 Preparation, characterization and photocatalytic activity of Co-doped ZnO powders
DOI:10.1016/j.jallcom.2010.03.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:42 AU: Xu, Chao;Cao, Lixin;Su, Ge;Liu, Wei;Qu, Xiaofei;Yu, Yaqin;
10:33:5 Structure and photocatalytic activity of Ni-doped ZnO nanorods
DOI:10.1016/j.materresbull.2011.04.008 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:36 AU: Zhao, Jing;Wang, Li;Yan, Xiaoqin;Yang, Ya;Lei, Yang;Zhou, Jing;Huang, Yunhua;Gu, Yousong;Zhang, Yue;
10:33:6 Preparation and photocatalytic properties of visible light-driven samarium-doped ZnO nanorods
DOI:10.1016/j.ceramint.2013.01.004 JN:CERAMICS INTERNATIONAL PY:2013
TC:27 AU: Sin, Jin-Chung;Lam, Sze-Mun;Lee, Keat-Teong;Mohamed, Abdul Rahman;
10:33:7 Synthesis, characterization and photocatalytic activity of Cu-doped Zn/ZnO photocatalyst with carbon modification
DOI:10.1039/c2jm35110b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:13 AU: Ma, Hongchao;Yue, Lixia;Yu, Chunling;Dong, Xiaoli;Zhang, Xinxin;Xue, Mang;Zhang, Xiufang;Fu, Yinghuan;
10:33:8 Microwave hydrothermal synthesis of Sr2+ doped ZnO crystallites with enhanced photocatalytic properties
DOI:10.1016/j.ceramint.2013.10.061 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Li, Dan;Huang, Jian-Feng;Cao, Li-Yun;Li, Jia-Yin;OuYang, Hai-Bo;Yao, Chun-Yan;
10:33:9 Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation
DOI:10.1016/j.matchemphys.2013.02.044 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:9 AU: Moafi, Hadi Fallah;Zanjanchi, Mohammad Ali;Shojaie, Abdollah Fallah;
10:33:10 Synthesis of Sn-doped ZnO nanorods and their photocatalytic properties
DOI:10.1016/j.materresbull.2011.02.043 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:28 AU: Wu, Changle;Shen, Li;Yu, Huaguang;Huang, Qingli;Zhang, Yong Cai;
10:33:11 Preparation of rare earth-doped ZnO hierarchical micro/nanospheres and their enhanced photocatalytic activity under visible light irradiation
DOI:10.1016/j.ceramint.2013.10.128 JN:CERAMICS INTERNATIONAL PY:2014
TC:14 AU: Sin, Jin-Chung;Lam, Sze-Mun;Lee, Keat-Teong;Mohamed, Abdul Rahman;
10:33:12 Photodegradation of phenol and benzoic acid by sol-gel-synthesized alkali metal-doped ZnO
DOI:10.1016/j.mssp.2011.12.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:11 AU: Benhebal, Hadj;Chaib, Messaoud;Leonard, Angelique;Lambert, Stephanie D.;Crine, Michel;
10:33:13 Self-assembly fabrication of ZnO hierarchical micro/nanospheres for enhanced photocatalytic degradation of endocrine-disrupting chemicals
DOI:10.1016/j.mssp.2013.05.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:14 AU: Sin, Jin-Chung;Lam, Sze-Mun;Lee, Keat-Teong;Mohamed, Abdul Rahman;
10:33:14 Solvothermal synthesis of Cu-doped ZnO nanowires with visible light-driven photocatalytic activity
DOI:10.1016/j.matlet.2012.01.125 JN:MATERIALS LETTERS PY:2012
TC:15 AU: Wu, Changle;Shen, Li;Yu, Huaguang;Zhang, Yong-Cai;Huang, Qingli;
10:33:15 Catalytic and photocatalytic activity of lightly doped catalysts M:ZnO (M = Cu, Mn)
DOI:10.1016/j.matchemphys.2010.05.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:32 AU: Donkova, B.;Dimitrov, D.;Kostadinov, M.;Mitkova, E.;Mehandjiev, D.;
10:33:16 Liquid phase deposition of ZnO film for photoelectrocatalytic degradation of p-nitrophenol
DOI:10.1016/j.mssp.2013.09.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Fan, Mingming;Yang, Changzhu;Pu, Wenhong;Zhang, Jingdong;
10:33:17 Fabrication of tin-doped zinc oxide by parallel flow co-precipitation with enhanced photocatalytic performance
DOI:10.1016/j.mssp.2012.05.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:8 AU: Li, Jian Zhang;Zhong, Jun Bo;Hu, Wei;Lu, Yan;Zeng, Jun;Shen, Yue Cheng;
10:33:18 Photocatalytic degradation properties of Ni(OH)(2) nanosheets/ZnO nanorods composites for azo dyes under visible-light irradiation
DOI:10.1016/j.ceramint.2013.05.103 JN:CERAMICS INTERNATIONAL PY:2014
TC:11 AU: Cai, Xiaoyan;Cai, Yun;Liu, Yongjun;Deng, Shaojuan;Wang, Yan;Wang, Yude;Djerdj, Igor;
10:33:19 Synthesis of AgBr/ZnO nanocomposite with visible light-driven photocatalytic activity
DOI:10.1016/j.matlet.2011.08.030 JN:MATERIALS LETTERS PY:2012
TC:22 AU: Wu, Changle;Shen, Li;Zhang, Yong Cai;Huang, Qingli;
10:33:20 Green hydrothermal synthesis of ZnO nanotubes for photocatalytic degradation of methylparaben
DOI:10.1016/j.matlet.2012.12.008 JN:MATERIALS LETTERS PY:2013
TC:17 AU: Lam, Sze-Mun;Sin, Jin-Chung;Abdullah, Ahmad Zuhairi;Mohamed, Abdul Rahman;
10:33:21 Preparation and visible light photocatalytic activity of Zn1-xFexO nanocrystalline
DOI:10.1016/j.matchemphys.2011.07.012 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:14 AU: Xiao, Qi;Yao, Chi;
10:33:22 Fabrication of Bi3+-doped ZnO with enhanced photocatalytic performance
DOI:10.1016/j.apsusc.2012.01.121 JN:APPLIED SURFACE SCIENCE PY:2012
TC:20 AU: Zhong, Jun Bo;Li, Jian Zhang;Lu, Yan;He, Xi Yang;Zeng, Jun;Hu, Wei;Shen, Yue Cheng;
10:33:23 Eradication of Multi-drug Resistant Bacteria by Ni Doped ZnO Nanorods: Structural, Raman and optical characteristics
DOI:10.1016/j.apsusc.2014.04.100 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Jan, Tariq;Iqbal, Javed;Ismail, Muhammad;Mansoor, Qaisar;Mahmood, Arshad;Ahmad, Amaar;
10:33:24 Electron paramagnetic resonance in Zn1-xCoxO
DOI:10.1016/j.jmmm.2012.10.026 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:1 AU: Acosta-Humanez, F.;Cogollo Pitalua, R.;Almanza, O.;
10:33:25 Fabrication of erbium-doped spherical-like ZnO hierarchical nanostructures with enhanced visible light-driven photocatalytic activity
DOI:10.1016/j.matlet.2012.09.049 JN:MATERIALS LETTERS PY:2013
TC:15 AU: Sin, Jin-Chung;Lam, Sze-Mun;Lee, Keat-Teong;Mohamed, Abdul Rahman;
10:33:26 Investigation of the Photocatalytic Activity of ZnO Nanowires: Substrate Effect and Kinetics Analysis
DOI:10.1155/2014/426457 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:2 AU: Chang, Jan-Hau;Lin, Heh-Nan;
10:33:27 The seeding effect on the microstructure and photocatalytic properties of ZnO nano powders
DOI:10.1016/j.matlet.2010.06.043 JN:MATERIALS LETTERS PY:2010
TC:16 AU: Asl, Shahab Khameneh;Sadrnezhaad, S. K.;Rad, M. Kianpour;
10:33:28 Solvothermal synthesis of N-doped ZnO microcrystals from commercial ZnO powder with visible light-driven photocatalytic activity
DOI:10.1016/j.matlet.2013.12.111 JN:MATERIALS LETTERS PY:2014
TC:8 AU: Wu, Changle;Zhang, Yong Cai;Huang, Qingli;
10:33:29 Synthesis as well as Raman and optical properties of Cu-doped ZnO nanorods prepared at low temperature
DOI:10.1016/j.ceramint.2013.07.122 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Iqbal, Javed;Jan, Tariq;Shafiq, M.;Arshad, Aqsa;Ahmad, Naeem;Badshah, Saeed;Yu, Ronghai;
10:33:30 Solvothermal synthesis of Ag/ZnO nanocomposite with enhanced photocatalytic activity
DOI:10.1016/j.matlet.2013.05.004 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Wu, Changle;Shen, Li;Zhang, Yong Cai;Huang, Qingli;
10:33:31 Synthesis of Ag2CO3/ZnO nanocomposite with visible light-driven photocatalytic activity
DOI:10.1016/j.matlet.2014.08.074 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Wu, Changle;
10:33:32 Exploitation of piezoelectricity for enhancing photocatalytic activity of ZnO nanowires
DOI:10.1016/j.matlet.2014.06.066 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Chang, Jan-Hau;Lin, Heh-Nan;
10:33:33 X-ray spectroscopy study of ZnxSn1-xO2 nanorods synthesized by hydrothermal technique
DOI:10.1016/j.tsf.2013.05.123 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Gautam, Sanjeev;Thakur, Anup;Vij, Ankush;Suk, Jaekwon;Lee, Ik-Jae;Park, Yong-Jun;Shin, Tae-Joo;Kim, Min-Gyu;Shin, Hyun-Joon;Lee, Jenn-Min;Chen, Jin-Ming;Song, Jonghan;Chae, Keun Hwa;
10:33:34 Preparation of disk shaped ZnO particles using surfactant and their PL properties
DOI:10.1016/j.matlet.2012.02.031 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Choi, Kyeongmuk;Kang, Taeho;Oh, Seong-Geun;
10:33:35 Effect of Pr doping on the structural and optical properties of ZnO nanorods
DOI:10.1016/j.mseb.2010.07.035 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Ilanchezhiyan, P.;Kumar, G. Mohan;Subramanian, M.;Jayavel, R.;
10:33:36 Enhanced photocatalytic activity of sulfated silica-titania composites prepared by impregnation using ammonium persulfate solution
DOI:10.1016/j.mssp.2014.04.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Zhong, Junbo;Li, Jianzhang;Zeng, Jun;Huang, Shengtian;Hu, Wei;Chen, Jiufu;Li, Minjiao;Wang, Jie;Zhang, Shulin;
10:33:37 In-situ formation of Cu metal crystals within nanostructured ZnO electrospun fibers
DOI:10.1016/j.matlet.2011.05.086 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Wu, Yiquan;Dong, Zexuan;Jenness, Nathan J.;Clark, Robert L.;
10:34:1 High-quality vertically aligned ZnO nanorods synthesized by microwave-assisted CBD with ZnO-PVA complex seed layer on Si substrates
DOI:10.1016/j.jallcom.2011.03.153 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:43 AU: Hassan, J. J.;Hassan, Z.;Abu-Hassan, H.;
10:34:2 A high-sensitivity, fast-response, rapid-recovery p-n heterojunction photodiode based on rutile TiO2 nanorod array on p-Si(111)
DOI:10.1016/j.apsusc.2014.03.109 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Selman, Abbas M.;Hassan, Z.;Husham, M.;Ahmed, Naser M.;
10:34:3 Microwave assisted chemical bath deposition of vertically aligned ZnO nanorods on a variety of substrates seeded by PVA-Zn(OH)(2) nanocomposites
DOI:10.1016/j.apsusc.2012.01.007 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Hassan, J. J.;Mahdi, M. A.;Chin, C. W.;Hassan, Z.;Abu-Hassan, H.;
10:34:4 Facile synthesis of ZnO nanobullets/nanoflakes and their applications to dye-sensitized solar cells
DOI:10.1016/j.jallcom.2010.09.148 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:27 AU: Mou, Jixia;Zhang, Weiguang;Fan, Jun;Deng, Hong;Chen, Wei;
10:34:5 Preparation and characterization of ZnO transparent semiconductor thin films by sol-gel method
DOI:10.1016/j.jallcom.2010.01.100 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:62 AU: Tsay, Chien-Yie;Fan, Kai-Shiung;Chen, Sih-Han;Tsai, Chia-Hao;
10:34:6 Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films
DOI:10.1016/j.jallcom.2010.10.163 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:20 AU: Sharma, S. K.;Inamdar, A. I.;Im, Hyunsik;Kim, B. G.;Patil, P. S.;
10:34:7 Synthesis, characterization and optical properties of flower-like ZnO nanorods by non-catalytic thermal evaporation
DOI:10.1016/j.jallcom.2009.11.129 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:30 AU: Feng, Libing;Liu, Aihua;Liu, Mei;Ma, Yuying;Wei, Jing;Man, Baoyuan;
10:34:8 High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector
DOI:10.1063/1.4773245 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Hassan, J. J.;Mahdi, M. A.;Kasim, S. J.;Ahmed, Naser M.;Abu Hassan, H.;Hassan, Z.;
10:34:9 Annealing effect on the photoluminescence properties of ZnO nanorod array prepared by a PLD-assistant wet chemical method
DOI:10.1016/j.matchar.2010.08.002 JN:MATERIALS CHARACTERIZATION PY:2010
TC:32 AU: Wei, Sufeng;Lian, Jianshe;Wu, Hua;
10:34:10 Controllable vertically aligned ZnO nanorods on flexible polyethylene naphthalate (PEN) substrate using chemical bath deposition synthesis
DOI:10.1007/s00339-013-7619-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:5 AU: Shabannia, R.;Abu Hassan, H.;
10:34:11 Flake-like ZnO nanostructures density for improved absorption using electrochemical deposition in UV detection
DOI:10.1016/j.jallcom.2013.06.010 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Hassan, N. K.;Hashim, M. R.;
10:34:12 Preparation and DSC application of the size-tuned ZnO nanoarrays
DOI:10.1016/j.jallcom.2009.09.156 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Yuan, Kaidi;Yin, Xin;Li, Jiangtian;Wu, Jianjun;Wang, Yaoming;Huang, Fuqiang;
10:34:13 Structural and optical properties of nanocrystalline CdS thin films prepared using microwave-assisted chemical bath deposition
DOI:10.1016/j.tsf.2011.12.059 JN:THIN SOLID FILMS PY:2012
TC:26 AU: Mahdi, M. A.;Hassan, Z.;Ng, S. S.;Hassan, J. J.;Bakhori, S. K. Mohd;
10:34:14 Nanocrystalline zinc oxide thin films by novel double pulse single step electrodeposition
DOI:10.1016/j.jallcom.2010.01.090 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:19 AU: Inamdar, A. I.;Sonavane, A. C.;Sharma, S. K.;Im, Hyunsik;Patil, P. S.;
10:34:15 Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate
DOI:10.1007/s11051-009-9591-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:21 AU: He, Ying;Wang, Jun-An;Chen, Xiao-Ban;Zhang, Wen-Fei;Zeng, Xu-Yu;Gu, Qiu-Wen;
10:34:16 Growth and optical properties of ZnO nanorods prepared through hydrothermal growth followed by chemical vapor deposition
DOI:10.1016/j.jallcom.2011.02.010 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:17 AU: Kang, Dong-Suk;Lee, Hyo Sung;Han, Seok Kyu;Srivastava, Vibha;Babu, Eadi Sunil;Hong, Soon-Ku;Kim, Min-Jung;Song, Jae-Ho;Song, Jung-Hoon;Kim, Hyojin;Kim, Dojin;
10:34:17 Nanocrystalline ZnO film grown on porous silicon layer by radio frequency sputtering system
DOI:10.1016/j.matlet.2011.10.030 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Salman, Khaldun A.;Omar, Khalid;Hassan, Z.;
10:34:18 Characteristics of Photoconductive UV Photodetector Based on ZnO Nanorods Grown on Polyethylene Naphtha late Substrate by Chemical Bath Deposition Method
DOI:10.1007/s13391-014-3245-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:1 AU: Shabannia, R.;Abu Hassan, H.;
10:34:19 Bismuth-catalyzed synthesis of ZnO nanowires and their photoluminescence properties
DOI:10.1016/j.ceramint.2012.01.005 JN:CERAMICS INTERNATIONAL PY:2012
TC:1 AU: Na, Han Gil;Yang, Ju Chan;Kwak, Dong Sub;Kim, Hyoun Woo;
10:34:20 Growth and characterization of aligned ZnO nanorods synthesized on porous silicon
DOI:10.1016/j.matlet.2013.01.127 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Shabannia, R.;Abu Hassan, H.;
10:34:21 Effects of the morphology of nanostructured ZnO films on the efficiency of dye-sensitized solar cells
DOI:10.1016/j.renene.2011.10.010 JN:RENEWABLE ENERGY PY:2012
TC:23 AU: Giannouli, M.;Spiliopoulou, F.;
10:34:22 Green emission from ZnO nanorods: Role of defects and morphology
DOI:10.1016/j.scriptamat.2010.01.020 JN:SCRIPTA MATERIALIA PY:2010
TC:23 AU: Jayakumar, O. D.;Sudarsan, V.;Sudakar, C.;Naik, R.;Vatsa, R. K.;Tyagi, A. K.;
10:34:23 Nanostructured ZnO thin films by SDS-assisted electrodeposition for dye-sensitized solar cell applications
DOI:10.1016/j.ceramint.2012.11.103 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Lin, Yu;Yang, Jiyuan;Meng, Yongming;
10:34:24 Al-doped ZnO mechanical milled powders for dye sensitized cells
DOI:10.1016/j.jallcom.2009.11.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Damonte, L. C.;Donderis, V.;Ferrari, S.;Orozco, J.;Hernandez-Fenollosa, M. A.;
10:34:25 Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction
DOI:10.1155/2011/903176 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:2 AU: Chang, Sheng-Po;Chang, Ting-Hao;
10:34:26 Influence of growth parameters on texture of ZnO nanorods by using electrochemical deposition at low temperatures
DOI:10.1016/j.ssi.2011.12.010 JN:SOLID STATE IONICS PY:2012
TC:8 AU: Hsieh, Chien-Te;Yang, Shu-Ying;Gu, Jun-Lun;Jiang, Yun-Ru;
10:34:27 Hierarchical ZnO/Bi2O3 nanostructures: synthesis, characterization, and electron-beam modification
DOI:10.1007/s00339-009-5431-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:5 AU: Ling, Bo;Sun, Xiao Wei;Shen, Yi Qiang;Dong, Zhi Li;
10:34:28 Effects of platinum nano electrodeposits on corrosion of carbon substrate
DOI:10.1016/j.apsusc.2011.04.086 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Beom, Won-Jin;Kalubarme, R. S.;Yun, Kwi-Sub;Park, Chan-Jin;
10:34:29 Growth and characterization of different structured CdO using a vapor transport
DOI:10.1016/j.matlet.2013.03.093 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zaien, M.;Hmood, A.;Ahmed, N. M.;Hassan, Z.;
10:34:30 Formation of ordered TiO2 nanostructural arrays with tunable shapes by magnetron sputtering method
DOI:10.1016/j.matchemphys.2010.12.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:4 AU: Ren, Xin;Senapati, Kartik;Jiang, Wei-Tao;Jiang, Chuan-Hai;
10:35:1 Structural and optical characterizations of spin coated cobalt-doped cadmium oxide nanostructured thin films
DOI:10.1016/j.mssp.2014.05.019 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: El Sayed, A. M.;Ibrahim, Ali;
10:35:2 Structural, optical and electrical properties of chemically sprayed nanosized gallium doped CdO thin films
DOI:10.1016/j.jallcom.2010.01.150 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:24 AU: Deokate, R. J.;Salunkhe, S. V.;Agawane, G. L.;Pawar, B. S.;Pawar, S. M.;Rajpure, K. Y.;Moholkar, A. V.;Kim, J. H.;
10:35:3 Improvement of physical properties of CdO thin films by Au-Ag nanocluster codoping
DOI:10.1016/j.jallcom.2013.06.059 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Akin, Seckin;Karanfil, Gamze;Gultekin, Aytac;Sonmezoglu, Savas;
10:35:4 Structural, optical and electrical properties of cerium and gadolinium doped CdO thin films
DOI:10.1016/j.apsusc.2013.03.066 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Pan, L. L.;Li, G. Y.;Lian, J. S.;
10:35:5 Nanocluster n-CdO thin film by sol-gel for solar cell applications
DOI:10.1016/j.apsusc.2010.08.045 JN:APPLIED SURFACE SCIENCE PY:2010
TC:33 AU: Yakuphanoglu, Fahrettin;
10:35:6 Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition
DOI:10.1016/j.apsusc.2009.11.049 JN:APPLIED SURFACE SCIENCE PY:2010
TC:29 AU: Zheng, B. J.;Lian, J. S.;Zhao, L.;Jiang, Q.;
10:35:7 Synthesis and characterization of CdO nanocrystalline structure by mechanochemical method
DOI:10.1016/j.matlet.2010.12.054 JN:MATERIALS LETTERS PY:2011
TC:15 AU: Tadjarodi, A.;Imani, M.;
10:35:8 Influence of deposition temperature on morphological, optical, electrical and opto-electrical properties of highly textured nano-crystalline spray deposited CdO:Ga thin films
DOI:10.1016/j.apsusc.2010.06.043 JN:APPLIED SURFACE SCIENCE PY:2010
TC:19 AU: Moholkar, A. V.;Agawane, G. L.;Sim, Kyu-Ung;Kwon, Ye-bin;Rajpure, K. Y.;Kim, J. H.;
10:35:9 Facile synthesis of group-I elements (K, Li and Na)-doped nanostructured CdO films
DOI:10.1080/14786435.2014.981607 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Sahin, B.;Bayansal, F.;
10:35:10 Electrical characterization of nanocluster n-CdO/p-Si heterojunction diode
DOI:10.1016/j.jallcom.2010.06.174 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:27 AU: Yakuphanoglu, Fahrettin;Caglar, Mujdat;Caglar, Yasemin;Ilican, Saliha;
10:35:11 Bandgap variation in size controlled nanostructured Li-Ni co-doped CdO thin films
DOI:10.1016/j.jallcom.2011.11.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:19 AU: Gupta, R. K.;Serbetci, Z.;Yakuphanoglu, F.;
10:35:12 Electrical performance and interface states studies of undoped and Zn-doped CdO/p-Si heterojunction devices
DOI:10.1016/j.matchemphys.2011.11.068 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:12 AU: Farag, A. A. M.;Cavas, M.;Yakuphanoglu, F.;
10:35:13 Simple and rapid synthesis of Cadmium Oxide (CdO) nanospheres by a microwave-assisted combustion method
DOI:10.1016/j.powtec.2011.04.031 JN:POWDER TECHNOLOGY PY:2011
TC:19 AU: Selvam, N. Clament Sagaya;Kumar, R. Thinesh;Yogeenth, K.;Kennedy, L. John;Sekaran, G.;Vijaya, J. Judith;
10:35:14 Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics
DOI:10.1016/j.jallcom.2011.01.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:17 AU: Gupta, R. K.;Ghosh, K.;Patel, R.;Kahol, P. K.;
10:35:15 Optical, structural and surface characterization of ultrasonically sprayed CdO:F films
DOI:10.1016/j.jallcom.2010.10.097 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:23 AU: Akyuz, I.;Kose, S.;Ketenci, E.;Bilgin, V.;Atay, F.;
10:35:16 Nanopowder synthesis of aluminum doped cadmium oxide via sol-gel calcination processing
DOI:10.1016/j.jallcom.2010.09.111 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:19 AU: Aydin, C.;El-Nasser, H. M.;Yakuphanoglu, F.;Yahia, I. S.;Aksoy, M.;
10:35:17 Preparation and electrochemiluminescence behaviors of reduced graphene oxide/CdCO3 nanocomposites
DOI:10.1016/j.matlet.2012.04.075 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Wang, Kun;Guan, Qingmeng;Liu, Qian;Liu, Wei;Cai, Jianrong;
10:35:18 Experimental design to optimize the synthesis of CdO cauliflower-like nanostructure and high performance in photodegradation of toxic azo dyes
DOI:10.1016/j.materresbull.2012.11.042 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:5 AU: Tadjarodi, Azadeh;Imani, Mina;Kerdari, Hamed;
10:35:19 Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition
DOI:10.1016/j.apsusc.2012.11.096 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Zhu, Yuankun;Mendelsberg, Rueben J.;Zhu, Jiaqi;Han, Jiecai;Anders, Andre;
10:35:20 Preparation of nanostructured Bi-doped CdO thin films by sol-gel spin coating method
DOI:10.1016/j.matlet.2012.04.087 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Dagdelen, F.;Serbetci, Z.;Gupta, R. K.;Yakuphanoglu, F.;
10:35:21 Effect of cerium doping on the structural and optoelectrical properties of CdO nanocrystallite thin films
DOI:10.1016/j.matchemphys.2011.06.060 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:16 AU: Dakhel, A. A.;
10:35:22 Structural and electrical studies of Cu-doped CdO prepared by solid state reaction
DOI:10.1016/j.mssp.2012.12.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Colak, Hakan;Turkoglu, Orhan;
10:35:23 Synthesis, characterizations and antimicrobial activities of well dispersed ultra-long CdO nanowires
DOI:10.1063/1.4804930 JN:AIP ADVANCES PY:2013
TC:2 AU: Kumar, Sumeet;Ojha, Animesh K.;
10:35:24 Sol-gel dip coated CdO:Al films
DOI:10.1016/j.jallcom.2009.11.187 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:24 AU: Murali, K. R.;Kalaivanan, A.;Perumal, S.;Pillai, N. Neelakanda;
10:35:25 From nanowires to cubes of CdO: Ethanol gas response
DOI:10.1016/j.jallcom.2010.09.166 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:13 AU: Kamble, A. S.;Pawar, R. C.;Patil, J. Y.;Suryavanshi, S. S.;Patil, P. S.;
10:35:26 Analysis of electronic parameters of nanostructure copper doped cadmium oxide/p-silicon heterojunction
DOI:10.1016/j.jallcom.2012.05.025 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Karatas, Sukru;Yakuphanoglu, Fahrettin;
10:35:27 One dimensional well-aligned CdO nanocrystal by solvothermal method
DOI:10.1016/j.jallcom.2014.01.071 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Kaviyarasu, K.;Manikandan, E.;Paulraj, P.;Mohamed, S. B.;Kennedy, J.;
10:35:28 Studies on the synthesis of CdCO3 nanowires and porous CdO powder
DOI:10.1016/j.matlet.2009.10.036 JN:MATERIALS LETTERS PY:2010
TC:22 AU: Ashoka, S.;Chithaiah, P.;Chandrappa, G. T.;
10:35:29 A novel nanostructure of cadmium oxide synthesized by mechanochemical method
DOI:10.1016/j.materresbull.2011.07.016 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:6 AU: Tadjarodi, A.;Imani, M.;
10:35:30 Structural, optical and electrical properties of molybdenum-doped cadmium oxide thin films prepared by spray pyrolysis method
DOI:10.1007/s00339-012-7069-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Kumaravel, R.;Bhuvaneswari, S.;Ramamurthi, K.;Krishnakumar, V.;
10:35:31 Evolution of Structural, Optical and Electrical Characteristics of Spin-Coated CdO Thin Films with the Gelation State of the Sol-Gel
DOI:10.1007/s11664-014-3186-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Rajammal, R.;Anbarasu, V.;Savarimuthu, E.;Arumugam, S.;
10:35:32 Photoelectrochemical solar cells with chemically grown CdO rice grains on flexible stainless steel substrates
DOI:10.1016/j.matlet.2013.04.068 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Jambure, S. B.;Lokhande, C. D.;
10:35:33 Electrical, optical and structural properties of aluminum doped cadmium oxide thin films prepared by spray pyrolysis technique
DOI:10.1016/j.matchemphys.2010.03.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:16 AU: Kumaravel, R.;Menaka, S.;Snega, S. Regina Mary;Ramamurthi, K.;Jeganathan, K.;
10:35:34 A new route for the synthesis of CuIn0.5Ga0.5Se2 powder for solar cell applications
DOI:10.1016/j.powtec.2010.02.034 JN:POWDER TECHNOLOGY PY:2010
TC:27 AU: Yassitepe, Emre;Khalifa, Zaki;Jaffari, G. Hassnain;Chou, Chuen-Shii;Zulfiqar, Sonia;Sarwar, Muhammad Ilyas;Shah, Syed Ismat;
10:35:35 Impact of n-heptane as surfactant in the formation of CdO nanowires through microwave combustion
DOI:10.1016/j.apsusc.2012.12.009 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Raj, D. Sathya;Jayaprakash, R.;Prakash, T.;Kumar, Sanjay;Neri, G.;Krishnakumar, T.;
10:35:36 Ethanol sensing properties of chemosynthesized CdO nanowires and nanowalls
DOI:10.1016/j.matlet.2011.02.049 JN:MATERIALS LETTERS PY:2011
TC:20 AU: Kamble, A. S.;Pawar, R. C.;Tarwal, N. L.;More, L. D.;Patil, P. S.;
10:35:37 Annealing studies on the structural and optical properties of electrodeposited CdO thin films
DOI:10.1016/j.matchemphys.2011.09.035 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:10 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:35:38 Effects of illumination on electrical parameters of Ag/n-CdO/p-Si diode
DOI:10.1016/j.matchemphys.2012.10.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: Karatas, Sukru;Yakuphanoglu, Fahrettin;
10:35:39 Characterization of chemically sprayed CdO films on borate and phosphate glass substrates produced by melt-quenching technique
DOI:10.1016/j.matchemphys.2012.11.064 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Colak, S. Cetinkaya;Erdogan, B.;Akyuz, I.;Atay, F.;
10:35:40 Electrochemical deposition and characterization of elongated CdO nanostructures
DOI:10.1016/j.mseb.2011.05.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:8 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:35:41 Bandgap variation of nanostructure tin doped CdO films via SILAR processing
DOI:10.1016/j.ceramint.2014.01.089 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Sahin, B.;Taskopru, T.;Bayansal, F.;
10:35:42 Controlled synthesis of cadmium carbonate nanowires, nanoribbons, nanorings and sphere like architectures via hydrothermal method
DOI:10.1016/j.materresbull.2010.06.055 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:12 AU: Ashoka, S.;Nagaraju, G.;Thipperudraiah, K. V.;Chandrappa, G. T.;
10:35:43 Cadmium indate thin films, as transparent conducting oxides, obtained by the sol-gel technique
DOI:10.1016/j.solmat.2009.06.005 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:4 AU: Flores Mendoza, M. A.;Castanedo Perez, R.;Torres Delgado, G.;Zelaya Angel, O.;
10:35:44 Study of the optically diffused reflectance and thermal-microstructure for the phase transformation of AgNO3
DOI:10.1007/s00339-014-8257-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Hafez, M.;Yahia, I. S.;Taha, S.;
10:35:45 The importance of the methanol content in the precursor solution, on the physical properties of cadmium oxide thin films prepared by the sol-gel method
DOI:10.1016/j.jallcom.2010.07.054 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:2 AU: Martinez Ayala, A.;Torres Delgado, G.;Castanedo Perez, R.;Zelaya Angel, O.;
10:35:46 Effect of Sn doping on microstructural and optical properties of ZnO nanoparticles synthesized by microwave irradiation method
DOI:10.1007/s10853-013-7865-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:2 AU: Prakash, T.;Jayaprakash, R.;Espro, C.;Neri, G.;Kumar, E. Ranjith;
10:35:47 CdO Nanoparticle Toxicity on Growth, Morphology, and Cell Division in Escherichia coli
DOI:10.1021/la302872y JN:LANGMUIR PY:2012
TC:8 AU: Hossain, Sk Tofajjen;Mukherjee, Samir Kumar;
10:35:48 Ion irradiation induced formation of CdO microcrystals on CdTe surfaces
DOI:10.1016/j.matlet.2012.11.020 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Fabbri, F.;Armani, N.;Dierre, B.;Sekiguchi, T.;Plaza, J. L.;Martinez, O.;Salviati, G.;
10:35:49 Green hydrothermal synthesis and characterization of CdO2 nanoparticles
DOI:10.1016/j.matlet.2010.05.047 JN:MATERIALS LETTERS PY:2010
TC:2 AU: Liu, Yan;Zhang, Yong Cai;Zhang, Ming;
10:35:50 Effect of Ar+ ion irradiation on structural and optical properties of e-beam evaporated cadmium telluride thin films
DOI:10.1016/j.mssp.2010.12.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:5 AU: Shanmugan, S.;Mutharasu, D.;
10:35:51 Preparation and characterization of aluminum-incorporated cadmium oxide films
DOI:10.1016/j.mssp.2010.05.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:3 AU: Akyuz, I.;Kose, S.;Atay, F.;Bilgin, V.;
10:36:1 Optical and photocatalytic properties of La-doped ZnO nanoparticles prepared via precipitation and mechanical milling method
DOI:10.1016/j.ceramint.2012.09.050 JN:CERAMICS INTERNATIONAL PY:2013
TC:21 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Sukolrat, Apinya;Muensit, Nantakan;
10:36:2 Dependence of optical properties on doping metal, crystallite size and defect concentration of M-doped ZnO nanopowders (M = Al, Mg, Ti)
DOI:10.1016/j.ceramint.2010.12.010 JN:CERAMICS INTERNATIONAL PY:2011
TC:42 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Sukolrat, Apinya;
10:36:3 Preparation of zinc oxide ceramics with a sustainable antibacterial activity under dark conditions
DOI:10.1016/j.ceramint.2009.09.026 JN:CERAMICS INTERNATIONAL PY:2010
TC:59 AU: Hirota, Ken;Sugimoto, Maiko;Kato, Masaki;Tsukagoshi, Kazuhiko;Tanigawa, Tooru;Sugimoto, Hiroshi;
10:36:4 Structural, optical, photo catalytic and antibacterial activity of ZnO and Co doped ZnO nanoparticles
DOI:10.1016/j.matlet.2011.03.079 JN:MATERIALS LETTERS PY:2011
TC:66 AU: Nair, Manjula G.;Nirmala, M.;Rekha, K.;Anukaliani, A.;
10:36:5 Controlled synthesis of ZnO and TiO2 nanotubes by chemical method and their application in dye-sensitized solar cells
DOI:10.1016/j.renene.2010.09.019 JN:RENEWABLE ENERGY PY:2011
TC:53 AU: Liu, Zhifeng;Liu, Chengcheng;Ya, Jing;Lei, E.;
10:36:6 Optical, photocatalytic and bactericidal properties of Zn1-xLaxO and Zn1-xMgxO nanostructures prepared by a sol-gel method
DOI:10.1016/j.ceramint.2012.12.075 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Bangrak, Phuwadol;Muensit, Nantakan;
10:36:7 ZnO nanofluids: Green synthesis, characterization, and antibacterial activity
DOI:10.1016/j.matchemphys.2010.01.020 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:58 AU: Jalal, Razieh;Goharshadi, Elaheh K.;Abareshi, Maryam;Moosavi, Majid;Yousefi, Abbas;Nancarrow, Paul;
10:36:8 Synthesis, photocatalytic and antibacterial activities of ZnO particles modified by diblock copolymer
DOI:10.1016/j.powtec.2011.06.028 JN:POWDER TECHNOLOGY PY:2011
TC:32 AU: Amornpitoksuk, P.;Suwanboon, S.;Sangkanu, S.;Sukhoom, A.;Wudtipan, J.;Srijan, K.;Kaewtaro, S.;
10:36:9 Dependence of photocatalytic activity on structural and optical properties of nanocrystalline ZnO powders
DOI:10.1016/j.ceramint.2011.03.016 JN:CERAMICS INTERNATIONAL PY:2011
TC:27 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Muensit, Nantakan;
10:36:10 Effect of pH on the morphology and optical properties of modified ZnO particles by SDS via a precipitation method
DOI:10.1016/j.powtec.2010.05.014 JN:POWDER TECHNOLOGY PY:2010
TC:51 AU: Samaele, N.;Amornpitoksuk, P.;Suwanboon, S.;
10:36:11 Synthesis of large-scale uniform mulberry-like ZnO particles with microwave hydrothermal method and its antibacterial property
DOI:10.1016/j.ceramint.2012.09.049 JN:CERAMICS INTERNATIONAL PY:2013
TC:19 AU: Ma, Jianzhong;Liu, Junli;Bao, Yan;Zhu, Zhenfeng;Wang, Xiaofeng;Zhang, Jing;
10:36:12 Physical and chemical properties of multifunctional ZnO nanostructures prepared by precipitation and hydrothermal methods
DOI:10.1016/j.ceramint.2013.06.094 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Bangrak, Phuwadol;Randorn, Chamnan;
10:36:13 Synthesis, characterization and optical properties of Zn1-xTixO nanoparticles prepared via a high-energy ball milling technique
DOI:10.1016/j.ceramint.2010.08.039 JN:CERAMICS INTERNATIONAL PY:2011
TC:21 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Bangrak, Phuwadol;
10:36:14 Synthesis, characterization, photocatalytic and antibacterial activities of Ag-doped ZnO powders modified with a diblock copolymer
DOI:10.1016/j.powtec.2011.12.032 JN:POWDER TECHNOLOGY PY:2012
TC:24 AU: Amornpitoksuk, Pongsaton;Suwanboon, Sumetha;Sangkanu, Suthinee;Sukhoom, Ampaitip;Muensit, Nantakan;Baltrusaitis, Jonas;
10:36:15 The effect of Ce4+ incorporation on structural, morphological and photocatalytic characters of ZnO nanoparticles
DOI:10.1016/j.matchar.2014.08.021 JN:MATERIALS CHARACTERIZATION PY:2014
TC:7 AU: Kannadasan, N.;Shanmugam, N.;Cholan, S.;Sathishkumar, K.;Viruthagiri, G.;Poonguzhali, R.;
10:36:16 ZnO and Co-ZnO nanorods-Complementary role of oxygen vacancy in photocatalytic activity of under UV and visible radiation flux
DOI:10.1016/j.mseb.2013.11.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:6 AU: Rajbongshi, Biju Mani;Samdarshi, S. K.;
10:36:17 Structural, optical and antibacterial properties of nanocrystalline Zn1-xLaxO compound semiconductor
DOI:10.1016/j.mssp.2012.05.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;Bangrak, Phuwadol;Muensit, Nantakan;
10:36:18 Influence of alkaline solutions on morphology of ZnO prepared by hydrothermal method for using as photocatalyst and bactericidal agent
DOI:10.1016/j.matlet.2013.10.066 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Suwanboon, Sumetha;Klubnuan, Sarunya;Jantha, Nutsakon;Amornpitoksuk, Pongsaton;Bangrak, Phuwadol;
10:36:19 Preparation and characterization of nanocrystalline La-doped ZnO powders through a mechanical milling and their optical properties
DOI:10.1016/j.ceramint.2011.06.007 JN:CERAMICS INTERNATIONAL PY:2011
TC:10 AU: Suwanboon, Sumetha;Amornpitoksuk, Pongsaton;
10:36:20 Synthesis of ZnO nanoparticles using surfactant free in-air and microwave method
DOI:10.1016/j.apsusc.2011.06.094 JN:APPLIED SURFACE SCIENCE PY:2011
TC:37 AU: Sharma, Deepali;Sharma, Sapna;Kaith, B. S.;Rajput, Jaspreet;Kaur, Mohinder;
10:36:21 Fabrication of ZnO/SrTiO3 nanoarrays and its photoelectrochemical performances
DOI:10.1016/j.ijhydene.2014.04.018 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:1 AU: Guo, Keying;Liu, Zhifeng;Wang, Yun;Zhao, Yufeng;Xiao, Yuchen;Han, Jianhua;Li, Yajun;Wang, Bo;Cui, Ting;
10:36:22 Co-doped ZnO nanopowders: Location of cobalt and reduction in photocatalytic activity
DOI:10.1016/j.matchemphys.2011.12.061 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:19 AU: He, Rongliang;Hocking, Rosalie K.;Tsuzuki, Takuya;
10:36:23 Synergistic photodynamic action of ZnO nanomaterials encapsulated meso-tetra (4-sulfonatophenyl) porphyrin
DOI:10.1016/j.powtec.2012.12.024 JN:POWDER TECHNOLOGY PY:2013
TC:7 AU: Senthilkumar, S.;Hariharan, R.;Suganthi, A.;Ashokkumar, M.;Rajarajan, M.;Pitchumani, K.;
10:36:24 Effect of the mixing rate on the morphology and photocatalytic activity of ZnO powders prepared by a precipitation method
DOI:10.1016/j.apt.2013.02.001 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:2 AU: Intarasuwan, Khanitta;Amornpitoksuk, Pongsaton;Suwanboon, Sumetha;
10:36:25 Facile synthesis of ZnO and transition metal doped ZnO nanoparticles for the photocatalytic degradation of Methyl Orange
DOI:10.1016/j.ceramint.2013.12.088 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Kaur, Japinder;Singhal, Sonal;
10:36:26 Local structure and photocatalytic property of sol-gel synthesized ZnO doped with transition metal oxides
DOI:10.1007/s10853-011-6149-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:12 AU: He, Rongliang;Hocking, Rosalie K.;Tsuzuki, Takuya;
10:36:27 Morphology and optical properties of ZnO particles modified by diblock copolymer
DOI:10.1016/j.matlet.2009.11.055 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Samaele, N.;Amornpitoksuk, P.;Suwanboon, S.;
10:36:28 Controllable synthesis of spindle-like ZnO nanostructures by a simple low-temperature aqueous solution route
DOI:10.1016/j.apsusc.2010.12.115 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Lu, Hong-xia;Zhao, Yun-long;Yu, Xiu-jun;Chen, De-liang;Zhang, Li-wei;Xu, Hong-liang;Yang, Dao-yuan;Wang, Hai-long;Zhang, Rui;
10:36:29 Optimized dispersion of ZnO nanoparticles and antimicrobial activity against foodborne pathogens and spoilage microorganisms
DOI:10.1007/s11051-012-1324-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Perez Espitia, Paula Judith;Ferreira Soares, Nilda de Fatima;Teofilo, Reinaldo F.;Vitor, Debora M.;dos Reis Coimbra, Jane Selia;de Andrade, Nelio Jose;de Sousa, Frederico B.;Sinisterra, Ruben D.;Alves Medeiros, Eber Antonio;
10:36:30 Large-scale manufacture of ZnO nanorods by flame spray pyrolysis
DOI:10.1007/s11051-013-1461-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:6 AU: Hembram, K.;Sivaprakasam, D.;Rao, T. N.;Wegner, K.;
10:36:31 Enhanced visible-light-responsive photocatalytic property of CdS and PbS sensitized ZnO nanocomposite photocatalysts
DOI:10.1016/j.mseb.2012.03.020 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:5 AU: Liu, Chengcheng;Liu, Zhifeng;Li, Yabin;Liu, Zhichao;Wang, Yun;Lei, E.;Ya, Jing;Gargiulo, Nicola;Caputo, Domenico;
10:37:1 Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
DOI:10.1103/PhysRevB.84.035313 JN:PHYSICAL REVIEW B PY:2011
TC:51 AU: Wagner, M. R.;Callsen, G.;Reparaz, J. S.;Schulze, J. -H.;Kirste, R.;Cobet, M.;Ostapenko, I. A.;Rodt, S.;Nenstiel, C.;Kaiser, M.;Hoffmann, A.;Rodina, A. V.;Phillips, M. R.;Lautenschlaeger, S.;Eisermann, S.;Meyer, B. K.;
10:37:2 Optical signature of Mg-doped GaN: Transfer processes
DOI:10.1103/PhysRevB.86.075207 JN:PHYSICAL REVIEW B PY:2012
TC:11 AU: Callsen, G.;Wagner, M. R.;Kure, T.;Reparaz, J. S.;Buegler, M.;Brunnmeier, J.;Nenstiel, C.;Hoffmann, A.;Hoffmann, M.;Tweedie, J.;Bryan, Z.;Aygun, S.;Kirste, R.;Collazo, R.;Sitar, Z.;
10:37:3 Excited state properties of donor bound excitons in ZnO
DOI:10.1103/PhysRevB.82.115207 JN:PHYSICAL REVIEW B PY:2010
TC:24 AU: Meyer, Bruno K.;Sann, Joachim;Eisermann, Sebastian;Lautenschlaeger, Stefan;Wagner, Markus R.;Kaiser, Martin;Callsen, Gordon;Reparaz, Juan S.;Hoffmann, Axel;
10:37:4 Characteristics of point defects in the green luminescence from Zn- and O-rich ZnO
DOI:10.1103/PhysRevB.86.115205 JN:PHYSICAL REVIEW B PY:2012
TC:24 AU: Ton-That, C.;Weston, L.;Phillips, M. R.;
10:37:5 Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
DOI:10.1063/1.3554434 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Callsen, G.;Reparaz, J. S.;Wagner, M. R.;Kirste, R.;Nenstiel, C.;Hoffmann, A.;Phillips, M. R.;
10:37:6 Competition between exciton-phonon interaction and defects states in the 3.31 eV band in ZnO
DOI:10.1103/PhysRevB.81.115304 JN:PHYSICAL REVIEW B PY:2010
TC:27 AU: Tainoff, D.;Masenelli, B.;Melinon, P.;Belsky, A.;Ledoux, G.;Amans, D.;Dujardin, C.;Fedorov, N.;Martin, P.;
10:37:7 Optical signatures of nitrogen acceptors in ZnO
DOI:10.1103/PhysRevB.85.235204 JN:PHYSICAL REVIEW B PY:2012
TC:11 AU: Lautenschlaeger, S.;Eisermann, S.;Haas, G.;Zolnowski, E. A.;Hofmann, M. N.;Laufer, A.;Pinnisch, M.;Meyer, B. K.;Wagner, M. R.;Reparaz, J. S.;Callsen, G.;Hoffmann, A.;Chernikov, A.;Chatterjee, S.;Bornwasser, V.;Koch, M.;
10:37:8 Reduction of the transverse effective charge of optical phonons in ZnO under pressure
DOI:10.1063/1.3447798 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Reparaz, J. S.;Muniz, L. R.;Wagner, M. R.;Goni, A. R.;Alonso, M. I.;Hoffmann, A.;Meyer, B. K.;
10:37:9 Size-dependent recombination dynamics in ZnO nanowires
DOI:10.1063/1.3294327 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Reparaz, J. S.;Gueell, F.;Wagner, M. R.;Hoffmann, A.;Cornet, A.;Morante, J. R.;
10:37:10 Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
DOI:10.1063/1.3275889 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:30 AU: Rauch, C.;Gehlhoff, W.;Wagner, M. R.;Malguth, E.;Callsen, G.;Kirste, R.;Salameh, B.;Hoffmann, A.;Polarz, S.;Aksu, Y.;Driess, M.;
10:37:11 Low temperature near band edge recombination dynamics in ZnO nanorods
DOI:10.1063/1.4896488 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Urgessa, Z. N.;Botha, J. R.;Eriksson, M. O.;Mbulanga, C. M.;Dobson, S. R.;Djiokap, S. R. Tankio;Karlsson, K. F.;Khranovskyy, V.;Yakimova, R.;Holtz, Per-Olof;
10:37:12 Spatial mapping of exciton lifetimes in single ZnO nanowires
DOI:10.1063/1.4808441 JN:APL MATERIALS PY:2013
TC:0 AU: Reparaz, J. S.;Callsen, G.;Wagner, M. R.;Gueell, F.;Morante, J. R.;Sotomayor Torres, C. M.;Hoffmann, A.;
10:37:13 Nitrogen incorporation in ZnO nanowires using N2O dopant gas
DOI:10.1016/j.matlet.2013.02.057 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Zhu, Liangchen;Cuong Ton-That;Phillips, Matthew R.;
10:37:14 Dynamics of donor bound excitons in ZnO
DOI:10.1063/1.4798531 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Chen, S. L.;Chen, W. M.;Buyanova, I. A.;
10:37:15 Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
DOI:10.1063/1.4807581 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Gogova, D.;Petrov, P. P.;Buegler, M.;Wagner, M. R.;Nenstiel, C.;Callsen, G.;Schmidbauer, M.;Kucharski, R.;Zajac, M.;Dwilinski, R.;Phillips, M. R.;Hoffmann, A.;Fornari, R.;
10:37:16 Raman tensor elements of wurtzite ZnO
DOI:10.1103/PhysRevB.85.165208 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: Sander, T.;Eisermann, S.;Meyer, B. K.;Klar, P. J.;
10:37:17 Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films
DOI:10.1063/1.4845855 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Cai, B.;Nakarmi, M. L.;Oder, T. N.;McMaster, M.;Velpukonda, N.;Smith, A.;
10:37:18 Carbon related donor bound exciton transitions in ZnO nanowires
DOI:10.1063/1.4892090 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Mohammadbeigi, F.;Kumar, E. Senthil;Alagha, S.;Anderson, I.;Watkins, S. P.;
10:37:19 Identification of a donor-related recombination channel in ZnO thin films
DOI:10.1103/PhysRevB.81.073306 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Brandt, Matthias;von Wenckstern, Holger;Benndorf, Gabriele;Lange, Martin;Dietrich, Christof P.;Kranert, Christian;Sturm, Chris;Schmidt-Grund, Ruediger;Hochmuth, Holger;Lorenz, Michael;Grundmann, Marius;Wagner, Markus R.;Alic, Miran;Nenstiel, Christian;Hoffmann, Axel;
10:37:20 Optical evidence for donor behavior of Sb in ZnO nanowires
DOI:10.1063/1.4799385 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kumar, E. Senthil;Mohammadbeigi, F.;Alagha, S.;Deng, Z. W.;Anderson, I. P.;Wintschel, T.;Watkins, S. P.;
10:37:21 Study of the photoluminescence emission line at 3.33 eV in ZnO films
DOI:10.1063/1.4733952 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Yalishev, V. Sh;Kim, Y. S.;Deng, X. L.;Park, B. H.;Yuldashev, Sh U.;
10:37:22 Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
DOI:10.1063/1.4794094 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Kirste, Ronny;Hoffmann, Marc P.;Tweedie, James;Bryan, Zachary;Callsen, Gordon;Kure, Thomas;Nenstiel, Christian;Wagner, Markus R.;Collazo, Ramon;Hoffmann, Axel;Sitar, Zlatko;
10:37:23 Uniaxial stress and Zeeman spectroscopy of the 3.324-eV Ge-related photoluminescence in ZnO
DOI:10.1103/PhysRevB.87.165202 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Cullen, J.;Johnston, K.;McGlynn, E.;Henry, M. O.;Dunker, D.;Yakovlev, D. R.;Bayer, M.;
10:37:24 Spin dynamics of isoelectronic bound excitons in ZnO
DOI:10.1103/PhysRevB.89.235202 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Chen, S. L.;Chen, W. M.;Buyanova, I. A.;
10:37:25 Recombination dynamics in ZnO nanowires: Surfaces states versus mode quality factor
DOI:10.1063/1.3496444 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Reparaz, J. S.;Gueell, F.;Wagner, M. R.;Callsen, G.;Kirste, R.;Claramunt, S.;Morante, J. R.;Hoffmann, A.;
10:37:26 Chemical identification of luminescence due to Sn and Sb in ZnO
DOI:10.1063/1.4807288 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Cullen, J.;Byrne, D.;Johnston, K.;McGlynn, E.;Henry, M. O.;
10:37:27 Properties of ZnO Thin Films Codoped with Lithium and Phosphorus
DOI:10.1007/s11664-014-3074-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Oder, Tom Nelson;Smith, Andrew;Freeman, Mark;McMaster, Michael;Cai, Bo;Nakarmi, Mim Lal;
10:37:28 Microscopic origins of the surface exciton photoluminescence peak in ZnO nanostructures
DOI:10.1103/PhysRevB.83.235320 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Biswas, Mahua;Jung, Yun Suk;Kim, Hong Koo;Kumar, Kumarappan;Hughes, Gregory J.;Newcomb, S.;Henry, Martin O.;McGlynn, Enda;
10:37:29 Zeeman splitting and dynamics of an isoelectronic bound exciton near the band edge of ZnO
DOI:10.1103/PhysRevB.86.235205 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;
10:37:30 Annealing-induced changes of the 3.31 eV emission in ZnO nanorods
DOI:10.1007/s00339-013-7883-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Sun, Luwei;He, Haiping;Li, Shuili;Ye, Zhizhen;
10:37:31 Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies
DOI:10.1063/1.3628332 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Chen, S. L.;Chen, W. M.;Buyanova, I. A.;
10:37:32 Distribution of visible luminescence centers in hydrogen-doped ZnO
DOI:10.1557/jmr.2011.383 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:5 AU: Lem, Laurent L. C.;Ton-That, Cuong;Phillips, Matthew R.;
10:37:33 Biexciton emission and crystalline quality of ZnO nano-objects
DOI:10.1088/0957-4484/22/28/285710 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Corfdir, Pierre;Abid, Mohamed;Mouti, Anas;Stadelmann, Pierre A.;Papa, Elisa;Ansermet, Jean-Philippe;Ganiere, Jean-Daniel;Deveaud-Pledran, Benoit;
10:37:34 Synthesis, structural and optical characterization of ZnO crystals grown in the presence of silver
DOI:10.1016/j.tsf.2011.10.208 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Rodrigues, J.;Soares, M. R. N.;Carvalho, R. G.;Fernandes, A. J. S.;Correia, M. R.;Monteiro, T.;Costa, F. M.;
10:37:35 The Hg isoelectronic defect in ZnO
DOI:10.1063/1.4832458 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Cullen, J.;Johnston, K.;Dunker, D.;McGlynn, E.;Yakovlev, D. R.;Bayer, M.;Henry, M. O.;
10:37:36 Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods
DOI:10.1016/j.matlet.2012.09.020 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Liu, Huibin;Lu, Qiuyuan;He, Haiping;Wu, Kewei;Li, Shuili;Huang, Jingyun;Lu, Yangfan;Pan, Xinhua;Ye, Zhizhen;Chu, Paul K.;
10:37:37 Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
DOI:10.1103/PhysRevB.81.085211 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Gil, Bernard;Bigenwald, Pierre;Paskov, Plamen P.;Monemar, Bo;
10:37:38 Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted with As-73 and Ge-73
DOI:10.1103/PhysRevB.83.125205 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Johnston, K.;Cullen, J.;Henry, M. O.;McGlynn, E.;Stachura, M.;
10:37:39 Excitonic transition dynamics on front and back surfaces of ZnO thin films
DOI:10.1103/PhysRevB.84.205216 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Lee, Sun-Kyun;Kwon, Bong-Joon;Cho, Yong-Hoon;Ko, Hang-Ju;Yao, Takafumi;
10:37:40 Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization
DOI:10.1016/j.jcrysgro.2010.11.126 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Nagarajan, M.;Sudhakar, S.;Lourdudoss, S.;Baskar, K.;
10:37:41 High-pressure study of the infrared active modes in wurtzite and rocksalt ZnO
DOI:10.1103/PhysRevB.84.125202 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Pellicer-Porres, J.;Segura, A.;Panchal, V.;Polian, A.;Decremps, F.;Dumas, P.;
10:37:42 Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies (vol 99, 091909, 2011)
DOI:10.1063/1.4766168 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Chen, S. L.;Chen, W. M.;Buyanova, I. A.;
10:37:43 Characteristics of intermediate state related to anti-Stokes luminescence of ZnO single crystals
DOI:10.1063/1.4883956 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Fujii, Katsushi;Goto, Takenari;Yao, Takafumi;
10:38:1 Texture surfaces and etching mechanism of ZnO:Al films by a neutral agent for solar cells
DOI:10.1016/j.solmat.2014.07.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Jiang, Qingjun;Lu, Jianguo;Zhang, Jie;Yuan, Yuliang;Cai, Hui;Wu, Chuanjia;Sun, Rujie;Lu, Bin;Pan, Xinhua;Ye, Zhizhen;
10:38:2 Novel etching method on high rate ZnO:Al thin films reactively sputtered from dual tube metallic targets for silicon-based solar cells
DOI:10.1016/j.solmat.2010.11.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:51 AU: Zhu, H.;Huepkes, J.;Bunte, E.;Owen, J.;Huang, S. M.;
10:38:3 Texture-etched broad surface features of double-layered ZnO:Al transparent conductive films for high haze values
DOI:10.1016/j.jallcom.2013.12.220 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Jiang, Q. J.;Lu, J. G.;Zhang, J.;Yuan, Y. L.;Cai, H.;Hu, L.;Feng, L. S.;Lu, B.;Pan, X. H.;Ye, Z. Z.;
10:38:4 Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications
DOI:10.1016/j.apsusc.2010.08.001 JN:APPLIED SURFACE SCIENCE PY:2010
TC:39 AU: Yen, W. T.;Lin, Y. C.;Ke, J. H.;
10:38:5 Enhancement of the light trapping by double-layered surface texture of ITO/AZO and AZO/AZO transparent conductive films
DOI:10.1016/j.matlet.2014.02.074 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Jiang, Q. J.;Lu, J. G.;Yuan, Y. L.;Cai, H.;Zhang, J.;Deng, N.;Ye, Z. Z.;
10:38:6 Preparation and character of textured ZnO:Al thin films deposited on flexible substrates by RF magnetron sputtering
DOI:10.1016/j.matlet.2011.01.019 JN:MATERIALS LETTERS PY:2011
TC:14 AU: Wang, Xiao-jing;Wang, Hang;Zhou, Wen-li;Li, Gang-xian;Yu, Jun;
10:38:7 Transparent and conductive electrodes combining AZO and ATO thin films for enhanced light scattering and electrical performance
DOI:10.1016/j.apsusc.2012.10.042 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Guillen, C.;Montero, J.;Herrero, J.;
10:38:8 High quality textured ZnO:Al surfaces obtained by a two-step wet-chemical etching method for applications in thin film silicon solar cells
DOI:10.1016/j.solmat.2011.03.042 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:28 AU: Fernandez, S.;de Abril, O.;Naranjo, F. B.;Gandia, J. J.;
10:38:9 The catalytic effect of iron(III) on the etching of ZnO:Al front contacts for thin-film silicon solar cells
DOI:10.1016/j.solmat.2013.01.045 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:3 AU: Pust, Sascha E.;Worbs, Janine;Jost, Gabrielle;Huepkes, Juergen;
10:38:10 Transparent conducting oxide layers for thin film silicon solar cells
DOI:10.1016/j.tsf.2010.03.104 JN:THIN SOLID FILMS PY:2010
TC:20 AU: Rath, J. K.;Liu, Y.;de Jong, M. M.;de Wild, J.;Schuttauf, J. A.;Brinza, M.;Schropp, R. E. I.;
10:38:11 Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells
DOI:10.1016/j.tsf.2013.07.015 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Chen, Xin-liang;Wang, Fei;Geng, Xin-hua;Huang, Qian;Zhao, Ying;Zhang, Xiao-dan;
10:38:12 Improving conductivity and texture in ZnO:Al sputtered thin films by sequential chemical and thermal treatments
DOI:10.1016/j.apsusc.2013.06.090 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Guillen, C.;Herrero, J.;
10:38:13 Tailoring the morphology, optical and electrical properties of DC-sputtered ZnO:Al films by post thermal and plasma treatments
DOI:10.1016/j.matlet.2013.05.002 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Jiang, Q. J.;Lu, J. G.;Yuan, Y. L.;Sun, L. W.;Wang, X.;Wen, Z.;Ye, Z. Z.;Xiao, D.;Ge, H. Z.;Zhao, Y.;
10:38:14 Light scattering by textured transparent electrodes for thin-film silicon solar cells
DOI:10.1016/j.solmat.2010.05.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:17 AU: Krasnov, Alexey;
10:38:15 Process monitoring of texture-etched high-rate ZnO:Al front contacts for silicon thin-film solar cells
DOI:10.1016/j.tsf.2012.11.147 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Jost, Gabrielle;Merdzhanova, Tsvetelina;Zimmermann, Thomas;Huepkes, Juergen;
10:38:16 Mechanism of an AZO-coated FTO film in improving the hydrogen plasma durability of transparent conducting oxide thin films for amorphous-silicon based tandem solar cells
DOI:10.1039/c2jm15682b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:11 AU: Chantarat, N.;Hsu, Shu-Han;Lin, Chin-Ching;Chiang, Mei-Ching;Chen, San-Yuan;
10:38:17 Hydrogen mediated self-textured zinc oxide films for silicon thin film solar cells
DOI:10.1016/j.solmat.2012.03.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:11 AU: Huang, Qian;Liu, Yang;Yang, Susu;Zhao, Ying;Zhang, Xiaodan;
10:38:18 Etching process optimization using NH4Cl aqueous solution to texture ZnO:Al films for efficient light trapping in flexible thin film solar cells
DOI:10.1016/j.tsf.2011.04.207 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Fernandez, S.;de Abril, O.;Naranjo, F. B.;Gandia, J. J.;
10:38:19 Effect of temperature on the properties of Al:ZnO films deposited by magnetron sputtering with inborn surface texture
DOI:10.1007/s10853-011-6196-y JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:5 AU: Li, Weimin;Hao, Huiying;
10:38:20 Structural and Optical Properties of Smooth Surface TCO Thin Films Deposited on Different-Sized Staked Nanoparticle Layers for Window Electrode of Thin Film Si Solar Cells
DOI:10.2320/matertrans.M2014208 JN:MATERIALS TRANSACTIONS PY:2014
TC:0 AU: Miura, Shuhei;Suzuki, Kazutoshi;Noda, Shinichi;Inoue, Masanari;Murakami, Kouichi;Nonomura, Shuichi;
10:38:21 Investigation of textured Al-doped ZnO thin films using chemical wet-etching methods
DOI:10.1016/j.matchemphys.2011.02.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:15 AU: Lu, Wei-Lun;Huang, Kuo-Chan;Yeh, Chih-Hung;Hung, Chen-I;Houng, Mau-Phon;
10:38:22 Effect of NaOH solution on surface textured ZnO: Al films prepared by pulsed direct current magnetron sputtering
DOI:10.1016/j.mssp.2012.04.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:3 AU: Wang, Ying;Wang, Hualin;Liu, Chaoqian;Wang, Yun;Peng, Shou;Chai, Weiping;
10:38:23 Instabilities in reactive sputtering of ZnO:Al and reliable texture-etching solution for light trapping in silicon thin film solar cells
DOI:10.1016/j.tsf.2011.09.031 JN:THIN SOLID FILMS PY:2012
TC:12 AU: Huepkes, J.;Zhu, H.;Owen, J. I.;Jost, G.;Bunte, E.;
10:38:24 Effect of the duty ratio on the indium tin oxide (ITO) film deposited by in-line pulsed DC magnetron sputtering method for resistive touch panel
DOI:10.1016/j.apsusc.2011.09.081 JN:APPLIED SURFACE SCIENCE PY:2011
TC:15 AU: Ahn, Min Hyung;Cho, Eou-Sik;Kwon, Sang Jik;
10:38:25 Room temperature deposition of highly conductive and transparent hydrogen and tungsten co-doped ZnO films for thin film solar cells applications
DOI:10.1016/j.solmat.2012.12.008 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Wang, Yanfeng;Zhang, Xiaodan;Huang, Qian;Wei, Changchun;Zhao, Ying;
10:38:26 Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering
DOI:10.1016/j.tsf.2011.03.014 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Lin, Y. C.;Wang, B. L.;Yen, W. T.;Shen, C. H.;
10:38:27 Inline RF sputtered TAZO films for applications in hydrogenated amorphous silicon thin film solar cells
DOI:10.1016/j.apsusc.2013.11.052 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Lien, Shui-Yang;Hsu, Chia-Hsun;Chang, Chia-Hung;Wu, Hsin-Yu;Hsieh, In-Cha;Wang, Da-Yung;
10:38:28 Structural, optical and light scattering properties of post etched RF sputtered ZnO:Al thin films deposited at various substrate temperature
DOI:10.1016/j.optmat.2013.01.037 JN:OPTICAL MATERIALS PY:2013
TC:11 AU: Bhavanasi, Venkateswarlu;Singh, Chandra Bhal;Datta, Debjit;Singh, Vandana;Shahi, Keshawa;Kumar, Satyendra;
10:38:29 Development of two-step etching approach for aluminium doped zinc oxide using a combination of standard HCl and NH4Cl etch steps
DOI:10.1016/j.tsf.2011.10.190 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Fernandez, S.;Pust, S. E.;Huepkes, J.;Naranjo, F. B.;
10:38:30 Texture optimization process of ZnO:Al thin films using NH4Cl aqueous solution for applications as antireflective coating in thin film solar cells
DOI:10.1016/j.tsf.2011.10.132 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Fernandez, S.;Gandia, J. J.;
10:38:31 Well-controlled wet etching of ZnO films using hydrogen peroxide solution
DOI:10.1016/j.apsusc.2013.11.053 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Wang, Yuchao;Wu, Tianzhun;Chen, Mingming;Su, Longxing;Zhang, Quanlin;Yuan, Lifang;Zhu, Yuan;Tang, Zikang;
10:38:32 Indium Tin Oxide Films with Low Resistivity at Room Temperature Using DC Magnetron Sputtering with Grid Electrode
DOI:10.2320/matertrans.M2013316 JN:MATERIALS TRANSACTIONS PY:2014
TC:0 AU: Lee, Ho-Nyun;Hur, Jin-Young;Kim, Hyun Jong;Lee, Min Hyung;Lee, Hong Kee;
10:38:33 Sol-gel derived scattering layers as substrates for thin-film photovoltaic cells
DOI:10.1016/j.tsf.2014.06.012 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Hegmann, Jan;Mandl, Magdalena;Loebmann, Peer;
10:38:34 Tailoring the refractive index of aluminum doped zinc oxide thin films by co-doping with titanium
DOI:10.1016/j.apsusc.2012.09.029 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Wei, Tiefeng;Lan, Pinjun;Yang, Ye;Zhang, Xianpeng;Tan, Ruiqin;Li, Yong;Song, Weijie;
10:38:35 Surface Texturing of Ga-Doped ZnO Thin Films by Pulsed Direct-Current Magnetron Sputtering for Photovoltaic Applications
DOI:10.1007/s11664-011-1835-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:0 AU: Lin, Y. C.;Yen, W. T.;Shen, C. H.;Yao, P. C.;
10:39:1 A window on the future of spintronics
DOI:10.1038/nmat2913 JN:NATURE MATERIALS PY:2010
TC:89 AU: Ohno, Hideo;
10:39:2 Structural and paramagnetic properties of dilute Ga1-xMnxN
DOI:10.1103/PhysRevB.81.235210 JN:PHYSICAL REVIEW B PY:2010
TC:29 AU: Stefanowicz, Wiktor;Sztenkiel, Dariusz;Faina, Bogdan;Grois, Andreas;Rovezzi, Mauro;Devillers, Thibaut;d'Acapito, Francesco;Navarro-Quezada, Andrea;Li, Tian;Jakiela, Rafal;Sawicki, Maciej;Dietl, Tomasz;Bonanni, Alberta;
10:39:3 Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
DOI:10.1103/PhysRevB.84.035206 JN:PHYSICAL REVIEW B PY:2011
TC:21 AU: Bonanni, A.;Sawicki, M.;Devillers, T.;Stefanowicz, W.;Faina, B.;Li, Tian;Winkler, T. E.;Sztenkiel, D.;Navarro-Quezada, A.;Rovezzi, M.;Jakiela, R.;Grois, A.;Wegscheider, M.;Jantsch, W.;Suffczynski, J.;D'Acapito, F.;Meingast, A.;Kothleitner, G.;Dietl, T.;
10:39:4 Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg
DOI:10.1103/PhysRevB.84.155321 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Navarro-Quezada, A.;Szwacki, N. Gonzalez;Stefanowicz, W.;Li, Tian;Grois, A.;Devillers, T.;Rovezzi, M.;Jakiela, R.;Faina, B.;Majewski, J. A.;Sawicki, M.;Dietl, T.;Bonanni, A.;
10:39:5 Origin of low-temperature magnetic ordering in Ga1-xMnxN
DOI:10.1103/PhysRevB.85.205204 JN:PHYSICAL REVIEW B PY:2012
TC:11 AU: Sawicki, M.;Devillers, T.;Galeski, S.;Simserides, C.;Dobkowska, S.;Faina, B.;Grois, A.;Navarro-Quezada, A.;Trohidou, K. N.;Majewski, J. A.;Dietl, T.;Bonanni, A.;
10:39:6 Aggregation and magnetism of Cr, Mn, and Fe cations in GaN
DOI:10.1103/PhysRevB.83.184417 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Szwacki, N. Gonzalez;Majewski, J. A.;Dietl, T.;
10:39:7 Embedded magnetic phases in (Ga,Fe)N: Key role of growth temperature
DOI:10.1103/PhysRevB.81.205206 JN:PHYSICAL REVIEW B PY:2010
TC:20 AU: Navarro-Quezada, A.;Stefanowicz, W.;Li, Tian;Faina, B.;Rovezzi, M.;Lechner, R. T.;Devillers, T.;d'Acapito, F.;Bauer, G.;Sawicki, M.;Dietl, T.;Bonanni, A.;
10:39:8 Homogeneous and heterogeneous magnetism in (Zn,Co)O: From a random antiferromagnet to a dipolar superferromagnet by changing the growth temperature
DOI:10.1103/PhysRevB.88.085204 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Sawicki, M.;Guziewicz, E.;Lukasiewicz, M. I.;Proselkov, O.;Kowalik, I. A.;Lisowski, W.;Dluzewski, P.;Wittlin, A.;Jaworski, M.;Wolska, A.;Paszkowicz, W.;Jakiela, R.;Witkowski, B. S.;Wachnicki, L.;Klepka, M. T.;Luque, F. J.;Arvanitis, D.;Sobczak, J. W.;Krawczyk, M.;Jablonski, A.;Stefanowicz, W.;Sztenkiel, D.;Godlewski, M.;Dietl, T.;
10:39:9 Nearest-neighbor Mn antiferromagnetic exchange in Ga(1-x)MnxN
DOI:10.1103/PhysRevB.81.184425 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Granville, S.;Ruck, B. J.;Budde, F.;Trodahl, H. J.;Williams, G. V. M.;
10:39:10 Ga1-xMnxN epitaxial films with high magnetization
DOI:10.1063/1.4734761 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Kunert, G.;Dobkowska, S.;Li, Tian;Reuther, H.;Kruse, C.;Figge, S.;Jakiela, R.;Bonanni, A.;Grenzer, J.;Stefanowicz, W.;von Borany, J.;Sawicki, M.;Dietl, T.;Hommel, D.;
10:39:11 Phase diagram and critical behavior of the random ferromagnet Ga1-xMnxN
DOI:10.1103/PhysRevB.88.081201 JN:PHYSICAL REVIEW B PY:2013
TC:4 AU: Stefanowicz, S.;Kunert, G.;Simserides, C.;Majewski, J. A.;Stefanowicz, W.;Kruse, C.;Figge, S.;Li, Tian;Jakiela, R.;Trohidou, K. N.;Bonanni, A.;Hommel, D.;Sawicki, M.;Dietl, T.;
10:39:12 Planar arrays of magnetic nanocrystals embedded in GaN
DOI:10.1063/1.4747809 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Navarro-Quezada, A.;Devillers, T.;Li, Tian;Bonanni, A.;
10:39:13 Characterization of Fe-N nanocrystals and nitrogen-containing inclusions in (Ga, Fe)N thin films using transmission electron microscopy
DOI:10.1063/1.4816049 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Kovacs, A.;Schaffer, B.;Moreno, M. S.;Jinschek, J. R.;Craven, A. J.;Dietl, T.;Bonanni, A.;Dunin-Borkowski, R. E.;
10:39:14 Element-specific characterization of heterogeneous magnetism in (Ga,Fe)N films
DOI:10.1103/PhysRevB.85.184411 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Kowalik, I. A.;Persson, A.;Nino, M. A.;Navarro-Quezada, A.;Faina, B.;Bonanni, A.;Dietl, T.;Arvanitis, D.;
10:39:15 Experimental determination of Rashba spin-orbit coupling in wurtzite n-GaN:Si
DOI:10.1103/PhysRevB.89.205201 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Stefanowicz, W.;Adhikari, R.;Andrearczyk, T.;Faina, B.;Sawicki, M.;Majewski, J. A.;Dietl, T.;Bonanni, A.;
10:39:16 Clusters and Magnetic Anchoring Points in (Ga,Fe)N Condensed Magnetic Semiconductors
DOI:10.1103/PhysRevLett.107.196401 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:10 AU: Filippone, Francesco;Mattioli, Giuseppe;Alippi, Paola;Bonapasta, Aldo Amore;
10:39:17 Effects of s,p-d and s-p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
DOI:10.1103/PhysRevB.83.094421 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Suffczynski, J.;Grois, A.;Pacuski, W.;Golnik, A.;Gaj, J. A.;Navarro-Quezada, A.;Faina, B.;Devillers, T.;Bonanni, A.;
10:39:18 Structural, morphological and magnetic properties of AlGaN thin films co-implanted with Cr and Sm ions
DOI:10.1016/j.jmmm.2013.04.072 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:5 AU: Gao, Xingguo;Liu, Chao;Yin, Chunhai;Sun, Lili;Tao, Dongyan;Yang, Cheng;Man, Baoyuan;
10:39:19 Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach
DOI:10.1063/1.4734000 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Wierzbowska, Malgorzata;
10:39:20 Determination of the Fermi level position in dilute magnetic Ga1-xMnxN films
DOI:10.1063/1.4869134 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Barthel, S.;Kunert, G.;Gartner, M.;Stoica, M.;Mourad, D.;Kruse, C.;Figge, S.;Hommel, D.;Czycholl, G.;
10:39:21 Bound states of the Fe impurity in wurtzite GaN from hybrid density-functional calculations
DOI:10.1103/PhysRevB.84.033201 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Alippi, Paola;Filippone, F.;Mattioli, G.;Bonapasta, A. Amore;Fiorentini, Vincenzo;
10:39:22 Effect of annealing time on the structural and ferromagnetic properties of the GaMnN thin films
DOI:10.1007/s00339-013-8018-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Gao, Xingguo;Man, Baoyuan;Liu, Mei;Yang, Cheng;Chen, Chuansong;
10:39:23 Planar array of self-assembled GaxFe4-xN nanocrystals in GaN: magnetic anisotropy determined via ferromagnetic resonance
DOI:10.1088/0957-4484/25/39/395704 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Grois, A.;Devillers, T.;Li, Tian;Bonanni, A.;
10:39:24 Functional Mn-Mg-k cation complexes in GaN featured by Raman spectroscopy
DOI:10.1063/1.4833024 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Devillers, T.;Leite, D. M. G.;Dias da Silva, J. H.;Bonanni, A.;
10:39:25 The important role of Mn3+ in the room-temperature ferromagnetism of Mn-doped GaN films
DOI:10.1016/j.apsusc.2011.08.075 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Hu, B.;Man, B. Y.;Yang, C.;Liu, M.;Chen, C. S.;Gao, X. G.;Xu, S. C.;Wang, C. C.;Sun, Z. C.;
10:39:26 Stoichiometry determined exchange interactions in amorphous ternary transition metal oxides: Theory and experiment
DOI:10.1063/1.4891474 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Hu, Shu-jun;Yan, Shi-shen;Zhang, Yun-peng;Zhao, Ming-wen;Kang, Shi-shou;Mei, Liang-mo;
10:39:27 Spin polarization of Zn1-xCoxO probed by magnetoresistance
DOI:10.1063/1.4764542 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Li, Q.;Shen, T. T.;Dai, Z. K.;Cao, Y. L.;Yan, S. S.;Kang, S. S.;Dai, Y. Y.;Chen, Y. X.;Liu, G. L.;Mei, L. M.;
10:39:28 Columnar microstructure of nanocrystalline Ga1-xMnxN films deposited by reactive sputtering
DOI:10.1016/j.jcrysgro.2011.05.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Leite, D. M. G.;Li, T.;Devillers, T.;Schiaber, Z. S.;Lisboa-Filho, P. N.;Bonanni, A.;Dias da Silva, J. H.;
10:39:29 Density functional theory calculations for a single Re impurity in silicon
DOI:10.1103/PhysRevB.83.184418 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Wierzbowska, M.;Fleszar, A.;
10:39:30 Optical properties of Mn-doped GaN
DOI:10.1103/PhysRevB.85.033302 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Boukortt, A.;Hayn, R.;Virot, F.;
10:39:31 Nitrogen vacancy effects on the ferromagnetism of Mn doped GaN films
DOI:10.1007/s00339-012-6900-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Hu, B.;Man, B. Y.;Liu, M.;Yang, C.;Chen, C. S.;Gao, X. G.;Xu, S. C.;Wang, C. C.;Sun, Z. C.;
10:39:32 Mechanism of ultrahigh Mn concentration in epitaxially grown wurtzite Ga1-xMnxN
DOI:10.1063/1.3521278 JN:APPLIED PHYSICS LETTERS PY:2010
TC:0 AU: Chen, Z. T.;Wang, L.;Yang, X. L.;Wang, C. D.;Zhang, G. Y.;
10:39:33 Direct observation of room-temperature ferromagnetism of single-phase Ga0.962Mn0.038N by magnetic force microscopy
DOI:10.1063/1.3503460 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Chen, Z. T.;Yang, X. L.;Dai, T.;Wang, C. D.;Wen, Z. C.;Han, B. S.;Zhang, Y. H.;Lin, Z. Y.;Qian, Y. Z.;Zhang, H.;Zhang, G. Y.;
10:39:34 Critical behavior of diluted magnetic semiconductors: Apparent violation and eventual restoration of the Harris criterion for all regimes of disorder
DOI:10.1103/PhysRevB.81.224403 JN:PHYSICAL REVIEW B PY:2010
TC:2 AU: Priour, D. J., Jr.;Das Sarma, S.;
10:39:35 Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
DOI:10.1016/j.apsusc.2011.05.055 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Pan, Xu;Wang, Xiaoliang;Xiao, Hongling;Wang, Cuimei;Yang, Cuibai;Li, Wei;Wang, Weiying;Jin, Peng;Wang, Zhanguo;
10:39:36 The nature of Cr center in GaN: Magnetic anisotropy of GaN:Cr single crystals
DOI:10.1063/1.4767916 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Gosk, J. B.;Bockowski, M.;Grzegory, I.;Szczytko, J.;Twardowski, A.;
10:39:37 Magnetoresistance enhanced by inelastic cotunneling in a ferromagnetic MnAs nanoparticle sandwiched by nonmagnetic electrodes
DOI:10.1063/1.3695990 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Akiyama, Ryota;Ohya, Shinobu;Hai, Pham Nam;Tanaka, Masaaki;
10:39:38 The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
DOI:10.1016/j.matlet.2010.11.017 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Sun, Lili;Liu, Chao;Li, Jianming;Wang, Junxi;Yan, Fawang;Zeng, Yiping;Li, Jinmin;
10:39:39 More than just room temperature
DOI:10.1038/nmat2918 JN:NATURE MATERIALS PY:2010
TC:0 AU: [Anonymous];
10:40:1 The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets
DOI:10.1016/j.jeurceramsoc.2014.05.022 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2014
TC:5 AU: Wu, Ming-Wei;Lai, Pang-Hsin;Hong, Chia-Hong;Chou, Fang-Cheng;
10:40:2 Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials
DOI:10.1016/j.apsusc.2012.03.073 JN:APPLIED SURFACE SCIENCE PY:2012
TC:13 AU: Lee, Sanghun;Cheon, Dongkeun;Kim, Won-Jeong;Ham, Moon-Ho;Lee, Woong;
10:40:3 Effect of target properties on transparent conducting impurity-doped ZnO thin films deposited by DC magnetron sputtering
DOI:10.1016/j.tsf.2010.08.007 JN:THIN SOLID FILMS PY:2010
TC:31 AU: Minami, Tadatsugu;Oda, Jun-ichi;Nomoto, Jun-ichi;Miyata, Toshihiro;
10:40:4 Comparative study of resistivity characteristics between transparent conducting AZO and GZO thin films for use at high temperatures
DOI:10.1016/j.tsf.2009.10.134 JN:THIN SOLID FILMS PY:2010
TC:32 AU: Nomoto, Jun-ichi;Konagai, Manabu;Okada, Kenji;Ito, Tomoyuki;Miyata, Toshihiro;Minami, Tadatsugu;
10:40:5 Investigation of aluminum-gallium co-doped zinc oxide targets for sputtering thin film and photovoltaic application
DOI:10.1016/j.jallcom.2013.04.075 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Liu, Jia;Zhang, Weijia;Song, Dengyuan;Ma, Qiang;Zhang, Lei;Zhang, Hui;Zhang, Leng;Wu, Ransong;
10:40:6 Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application
DOI:10.1016/j.jeurceramsoc.2012.08.007 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:19 AU: Neves, Nuno;Barros, Raquel;Antunes, Elsa;Calado, Joao;Fortunato, Elvira;Martins, Rodrigo;Ferreira, Isabel;
10:40:7 Preparation of Al-doped ZnO transparent electrodes suitable for thin-film solar cell applications by various types of magnetron sputtering depositions
DOI:10.1016/j.tsf.2011.10.003 JN:THIN SOLID FILMS PY:2011
TC:32 AU: Nomoto, Jun-ichi;Hirano, Tomoyasu;Miyata, Toshihiro;Minami, Tadatsugu;
10:40:8 Al-doped ZnO nanostructured powders by emulsion detonation synthesis - Improving materials for high quality sputtering targets manufacturing
DOI:10.1016/j.jeurceramsoc.2014.02.019 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2014
TC:3 AU: Neves, Nuno;Lagoa, Ana;Calado, Joao;Botelho do Rego, A. M.;Fortunato, Elvira;Martins, Rodrigo;Ferreira, Isabel;
10:40:9 The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film
DOI:10.1016/j.jeurceramsoc.2012.04.030 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:21 AU: Wu, Ming-Wei;Liu, Day-Shan;Su, Yu-Hsiang;
10:40:10 Gallium-doped zinc oxide targets fabricated by sintering: Impact of target quality on sputtered thin film properties
DOI:10.1016/j.mssp.2014.06.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Liu, Jia;Zhang, Weijia;Song, Dengyuan;Ma, Qiang;Zhang, Lei;Zhang, Hui;Ma, Xiaobo;Song, Haiyang;
10:40:11 Improvements of spatial resistivity distribution in transparent conducting Al-doped ZnO thin films deposited by DC magnetron sputtering
DOI:10.1016/j.tsf.2009.09.174 JN:THIN SOLID FILMS PY:2010
TC:24 AU: Oda, Jun-ichi;Nomoto, Jun-ichi;Miyata, Toshihiro;Minami, Tadatsugu;
10:40:12 Comparative study of the sintering process and thin film sputtering of AZO, GZO and AGZO ceramics targets
DOI:10.1016/j.ceramint.2014.04.150 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Liu, Jia;Zhang, Weijia;Song, Dengyuan;Ma, Qiang;Zhang, Lei;Zhang, Hui;Ma, Xiaobo;Song, Haiyang;
10:40:13 Two-step sintering of aluminum-doped zinc oxide sputtering target by using a submicrometer zinc oxide powder
DOI:10.1016/j.ceramint.2012.04.076 JN:CERAMICS INTERNATIONAL PY:2012
TC:8 AU: Wu, Ming-Wei;
10:40:14 Densification of Al-doped ZnO via preliminary heat treatment under external pressure
DOI:10.1016/j.jallcom.2011.04.085 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Hwang, Byungjin;Paek, Yeong-Kyeun;Yang, Seung-Ho;Lim, Sunkwon;Seo, Won-Seon;Oh, Kyung-Sik;
10:40:15 Anode material properties of Ga-doped ZnO thin films by pulsed DC magnetron sputtering method for organic light emitting diodes
DOI:10.1016/j.tsf.2010.02.068 JN:THIN SOLID FILMS PY:2010
TC:22 AU: Nam, Eunkyoung;Kang, Young-Hun;Jung, Donggeun;Kim, Young Sung;
10:40:16 Highly conductive alumina-added ZnO ceramic target prepared by reduction sintering and its effects on the properties of deposited thin films by direct current magnetron sputtering
DOI:10.1016/j.tsf.2010.06.004 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Huang, H. S.;Tung, H. C.;Chiu, C. H.;Hong, I. T.;Chen, R. Z.;Chang, J. T.;Lin, H. K.;
10:40:17 DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets
DOI:10.1016/j.apsusc.2014.05.225 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Miccoli, I.;Spampinato, R.;Marzo, F.;Prete, P.;Lovergine, N.;
10:40:18 Resistivity characteristics of transparent conducting impurity-doped ZnO films for use in oxidizing environments at high temperatures
DOI:10.1116/1.3455814 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:9 AU: Nomoto, Jun-ichi;Konagai, Manabu;Miyata, Toshihiro;Minami, Tadatsugu;
10:40:19 High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films
DOI:10.1016/j.tsf.2014.07.032 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Isherwood, P. J. M.;Neves, N.;Bowers, J. W.;Newbatt, P.;Walls, J. M.;
10:40:20 Low-resistivity, high-transmittance Ga:ZnO films prepared through metalorganic chemical vapor deposition using an inexpensive solution of diethylzinc in n-hexane as the Zn precursor
DOI:10.1063/1.4804431 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Nam Giang Nguyen;Van Thi Thanh Ho;Hong, Lu-Sheng;
10:40:21 Sintering Behavior of Nano- and Micro-Sized ZnO Powder Targets for rf Magnetron Sputtering Applications
DOI:10.1111/j.1551-2916.2011.04874.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:10 AU: Neves, Nuno;Barros, Raquel;Antunes, Elsa;Ferreira, Isabel;Calado, Joao;Fortunato, Elvira;Martins, Rodrigo;
10:40:22 Determination of the initial heat treatment temperature in the two-step sintering of xAl-ZnO (x=1, 2, and 3 wt.%)
DOI:10.1016/j.jeurceramsoc.2012.08.019 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2013
TC:7 AU: Lee, Sung-Pyo;Hwang, Byungjin;Paek, Yeong-Kyeun;Chung, Tai-Joo;Yang, Seung-Ho;Lim, Sunkwon;Seo, Won-Seon;Oh, Kyung-Sik;
10:40:23 Influence of the kind and content of doped impurities on impurity-doped ZnO transparent electrode applications in thin-film solar cells
DOI:10.1016/j.tsf.2012.07.141 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Nomoto, Jun-ichi;Nishi, Yuki;Miyata, Toshihiro;Minami, Tadatsugu;
10:40:24 Study of high-density AZO ceramic target
DOI:10.1016/j.mssp.2011.02.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Zhang, Jing;Zhang, Weijia;Zhao, Erjing;Jacques, Havugimana Jean;
10:40:25 Characteristics of GZO thin films deposited by sot-gel dip coating
DOI:10.1016/j.mssp.2011.01.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:10 AU: Kalaivanan, A.;Perumal, S.;Pillai, N. Neelakanda;Murali, K. R.;
10:40:26 Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods
DOI:10.1116/1.3591348 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:7 AU: Nomoto, Jun-ichi;Miyata, Toshihiro;Minami, Tadatsugu;
10:40:27 Influence of rapid thermal annealing on surface texture-etched Al-doped ZnO films prepared by various magnetron sputtering methods
DOI:10.1016/j.tsf.2011.10.067 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Minami, Tadatsugu;Hirano, Tomoyasu;Miyata, Toshihiro;Nomoto, Jun-ichi;
10:40:28 Preparation and Sintering Behavior of the Tin-Doped Indium Oxide Nanopowders
DOI:10.1111/j.1551-2916.2010.03851.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:6 AU: Zhu, Guisheng;Yang, Zupei;Zhi, Li;Yang, Huijuan;Xu, Huarui;Yu, Aibing;
10:40:29 Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films
DOI:10.1007/s11664-012-2155-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:5 AU: Zhu, Guisheng;Zhi, Li;Yang, Huijuan;Xu, Huarui;Yu, Aibing;
10:40:30 Highly efficient fully flexible indium tin oxide free organic light emitting diodes fabricated directly on barrier-foil
DOI:10.1016/j.tsf.2013.06.090 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Bocksrocker, Tobias;Huelsmann, Neele;Eschenbaum, Carsten;Pargner, Andreas;Hoefle, Stefan;Maier-Flaig, Florian;Lemmer, Uli;
10:40:31 ZnO nanoparticles produced by reactive laser ablation
DOI:10.1016/j.apsusc.2011.04.084 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Gafiychuk, V. V.;Ostafiychuk, B. K.;Popovych, D. I.;Popovych, I. D.;Serednytski, A. S.;
10:40:32 Investigation of aluminum-gallium co-doped zinc oxide targets for sputtering thin film and photovoltaic application (vol 575, pg 174, 2013)
DOI:10.1016/j.jallcom.2013.08.083 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: Liu, Jia;Zhang, Weijia;Song, Dengyuan;Ma, Qiang;Zhang, Lei;Zhang, Hui;Zhang, Leng;Wu, Ransong;
10:40:33 Optical and electrical properties of heat-resistant Sb-doped Sn1-xHfxO2 transparent conducting films
DOI:10.1016/j.tsf.2011.08.026 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Ueda, Kazushige;Kishigawa, Yusuke;Takano, Yasukazu;
10:41:1 Growth of homogenous CuO nano-structured thin films by a simple solution method
DOI:10.1016/j.jallcom.2010.10.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:35 AU: Bayansal, F.;Kahraman, S.;Cankaya, G.;Cetinkara, H. A.;Guder, H. S.;Cakmak, H. M.;
10:41:2 Optical and structural properties of CuO nanofilm: Its diode application
DOI:10.1016/j.jallcom.2009.11.109 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:39 AU: Erdogan, Ibrahim Y.;Gullu, O.;
10:41:3 Characterization of CBD grown ZnO films with high c-axis orientation
DOI:10.1016/j.matchemphys.2012.03.108 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:7 AU: Kahraman, S.;Bayansal, F.;Cetinkara, H. A.;Cakmak, H. M.;Guder, H. S.;
10:41:4 Physical properties of nanocrystalline CuO thin films prepared by the SILAR method
DOI:10.1016/j.mssp.2012.09.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:11 AU: Mageshwari, K.;Sathyamoorthy, R.;
10:41:5 Nano-structured CuO films prepared by simple solution methods: Plate-like, needle-like and network-like architectures
DOI:10.1016/j.ceramint.2011.10.011 JN:CERAMICS INTERNATIONAL PY:2012
TC:21 AU: Bayansal, F.;Cetinkara, H. A.;Kahraman, S.;Cakmak, H. M.;Guder, H. S.;
10:41:6 Fabrication and characterization of Mn-doped CuO thin films by the SILAR method
DOI:10.1016/j.ceramint.2013.01.077 JN:CERAMICS INTERNATIONAL PY:2013
TC:16 AU: Gulen, Y.;Bayansal, F.;Sahin, B.;Cetinkara, H. A.;Guder, H. S.;
10:41:7 Influence of coumarin as an additive on CuO nanostructures prepared by successive ionic layer adsorption and reaction (SILAR) method
DOI:10.1016/j.jallcom.2013.03.018 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Bayansal, F.;Sahin, B.;Yuksel, M.;Biyikli, N.;Cetinkara, H. A.;Guder, H. S.;
10:41:8 Growth of hierarchical based ZnO micro/nanostructured films and their tunable wettability behavior
DOI:10.1016/j.apsusc.2011.02.101 JN:APPLIED SURFACE SCIENCE PY:2011
TC:29 AU: Kumar, P. Suresh;Raj, A. Dhayal;Mangalaraj, D.;Nataraj, D.;Ponpandian, N.;Li, Lin;Chabrol, G.;
10:41:9 CuO nanostructures on copper foil by a simple wet chemical route at room temperature
DOI:10.1016/j.materresbull.2010.02.014 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:27 AU: Jana, S.;Das, S.;Das, N. S.;Chattopadhyay, K. K.;
10:41:10 Characteristics of ZnO thin films doped by various elements
DOI:10.1016/j.jcrysgro.2012.10.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Kahraman, S.;Cakmak, H. M.;Cetinkaya, S.;Bayansal, F.;Cetinkara, H. A.;Guder, H. S.;
10:41:11 CuO nano-whiskers: Electrodeposition, Raman analysis, photoluminescence study and photocatalytic activity
DOI:10.1016/j.matlet.2011.07.016 JN:MATERIALS LETTERS PY:2011
TC:38 AU: Mukherjee, Nillohit;Show, Bibhutibhushan;Maji, Swarup Kumar;Madhu, Utpal;Bhar, Sanjib Kumar;Mitra, Bibhas Chandra;Khan, Gobinda Gopal;Mondal, Anup;
10:41:12 A facile process to prepare copper oxide thin films as solar selective absorbers
DOI:10.1016/j.apsusc.2011.07.088 JN:APPLIED SURFACE SCIENCE PY:2011
TC:25 AU: Xiao, Xiudi;Miao, Lei;Xu, Gang;Lu, Limei;Su, Zhanmin;Wang, Ning;Tanemura, Sakae;
10:41:13 Fabrication of nanostructured CuO films by electrodeposition and their photocatalytic properties
DOI:10.1016/j.apsosc.2014.08.144 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Wang, Yongqian;Jiang, Tingting;Meng, Dawei;Yang, Jun;Li, Yinchang;Ma, Qun;Han, Jun;
10:41:14 Seed Layer-Assisted Chemical Bath Deposition of CuO Films on ITO-Coated Glass Substrates with Tunable Crystallinity and Morphology
DOI:10.1021/cm500762w JN:CHEMISTRY OF MATERIALS PY:2014
TC:5 AU: Zhu, Changqiong;Panzer, Matthew J.;
10:41:15 Influence of manganese concentration and annealing temperatures on the physical properties of CdO films grown by the SILAR method
DOI:10.1080/14786435.2013.872812 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:1 AU: Sahin, B.;Bayansal, F.;Yuksel, M.;
10:41:16 Modification of morphological, structural and optical properties of SILAR-based growth of CuO films on glass-slides by addition of dextrin
DOI:10.1016/j.jallcom.2014.06.123 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Bayansal, F.;Sahin, B.;Yuksel, M.;Cetinkara, H. A.;
10:41:17 SILAR-based growth of nanostructured CuO thin films from alkaline baths containing saccharin as additive
DOI:10.1016/j.matlet.2013.02.030 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Bayansal, F.;Sahin, B.;Yuksel, M.;Cetinkara, H. A.;
10:41:18 Structural and optical characterization of Al-doped ZnO films prepared by thermal oxidation of evaporated Zn/Al multilayered films
DOI:10.1016/j.matchemphys.2010.04.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:23 AU: Rusu, G. G.;Rambu, A. P.;Buta, V. E.;Dobromir, M.;Luca, D.;Rusu, M.;
10:41:19 Characterisation of ZnO nanorod arrays grown by a low temperature hydrothermal method
DOI:10.1080/14786435.2012.669064 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:4 AU: Kahraman, S.;Cetinkara, H. A.;Bayansal, F.;Cakmak, H. M.;Guder, H. S.;
10:41:20 Structural and optical study of Li doped CuO thin films on Si (1 0 0) substrate deposited by pulsed laser deposition
DOI:10.1016/j.apsusc.2014.04.027 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Chand, Prakash;Gaur, Anurag;Kumar, Ashavani;Gaur, Umesh Kumar;
10:41:21 Growth of novel ZnO nanostructures by soft chemical routes
DOI:10.1016/j.jallcom.2010.06.206 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Kumar, R. Saravana;Sathyamoorthy, R.;Matheswaran, P.;Sudhagar, P.;Kang, Yong Soo;
10:41:22 Influence of annealing to the properties of un-doped and Co-doped CdO films
DOI:10.1016/j.mssp.2013.11.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Sahin, B.;Bayansal, F.;Yuksel, M.;Cetinkara, H. A.;
10:41:23 Synthesis and characterization of undoped and tin-doped ZnO nanostructures
DOI:10.1007/s00339-012-7093-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:3 AU: Kahraman, S.;Bayansal, F.;Cakmak, H. M.;Cetinkara, H. A.;Guder, H. S.;
10:41:24 Effect of coumarin concentration on the physical properties of CdO nanostructures
DOI:10.1016/j.ceramint.2013.10.093 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Sahin, B.;Bayansal, F.;Yuksel, M.;Biyikli, N.;Cetinkara, H. A.;
10:41:25 Improved optical performance of CdO films prepared with CTAB as surfactant
DOI:10.1080/14786435.2014.932459 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:2 AU: Sahin, B.;
10:41:26 Studies and correlation among the structural, electrical and gas response properties of aerosol spray deposited self assembled nanocrystalline CuO
DOI:10.1016/j.apsusc.2011.03.133 JN:APPLIED SURFACE SCIENCE PY:2011
TC:17 AU: Singh, Iqbal;Bedi, R. K.;
10:41:27 Cu(OH)(2) and CuO nanotube networks from hexaoxacyclooctadecane-like posnjakite microplates: Synthesis and electrochemical hydrogen storage
DOI:10.1016/j.ijhydene.2011.10.090 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:7 AU: Sun, Yuzeng;Ma, Lin;Zhou, Baibin;Gao, Peng;
10:41:28 Highly photosensitive properties of CdS thin films doped with boron in high doping levels
DOI:10.1016/j.matlet.2012.06.110 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Challa, Kiran Kumar;Magnone, Edoardo;Kim, Eui-Tae;
10:41:29 Magnetic properties of high-symmetry CuO
DOI:10.1063/1.4875042 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Rabinovich, K. S.;Samoilenko, L. L.;Zhuravleva, A. S.;Shneider, A. G.;
10:41:30 Microstructural and optical studies of CuO thin films prepared by chemical ageing of copper substrate in alkaline ammonia solution
DOI:10.1016/j.jallcom.2014.07.221 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Alami, Abdul Hai;Allagui, Anis;Alawadhi, Hussain;
10:41:31 Growth and microstructural study of CuO covered ZnO nanorods
DOI:10.1016/j.jcrysgro.2012.04.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Pola-Albores, F.;Antunez-Flores, W.;Amezaga-Madrid, P.;Rios-Valdovinos, E.;Valenzuela-Zapata, M.;Paraguay-Delgado, F.;Miki-Yoshida, M.;
10:41:32 Controlled synthesis of CuO nanostructures on Cu foil, rod and grid
DOI:10.1016/j.mseb.2011.02.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:10 AU: Vanithakumari, S. C.;Shinde, S. L.;Nanda, K. K.;
10:41:33 Room temperature weak ferromagnetism and magnetoconductance in functional CuO film
DOI:10.1016/j.apsusc.2011.07.096 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Das, S.;Majumdar, S.;Giri, S.;
10:41:34 Fabrication and characterization of novel nanostructured copper oxide films via a facile solution route
DOI:10.1016/j.matlet.2009.10.046 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Xu, Yanyan;Wang, Cuiqing;Chen, Dairong;Jiao, Xiuling;
10:41:35 Preparation and characterization of CuO nanostructures on copper substrate as selective solar absorbers
DOI:10.1016/j.matchemphys.2013.11.023 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:7 AU: Kumar, S. Karthick;Murugesan, S.;Suresh, S.;
10:41:36 Effect of organic dispersants on structural and mechanical properties of Al2O3/ZrO2 composites
DOI:10.1016/j.materresbull.2012.09.001 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:3 AU: Safinajafabadi, Ali;Sarraf-Mamoory, Rasoul;Karimi, Zahra;
10:41:37 Surface modifications and optical variations of (-111) lattice oriented CuO nanofilms for solar energy applications
DOI:10.1016/j.materresbull.2013.05.072 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:5 AU: Dhanasekaran, V.;Mahalingam, T.;
10:41:38 Physical properties evaluation of various substrates coated cupric oxide thin films by dip method
DOI:10.1016/j.jallcom.2012.05.092 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:8 AU: Dhanasekaran, V.;Mahalingam, T.;
10:41:39 Slow Crack Growth Behavior of Zirconia-Toughened Alumina and Alumina Using the Dynamic Fatigue Indentation Technique
DOI:10.1111/j.1551-2916.2010.04086.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:3 AU: Ramalingam, Subramanian;Reimanis, Ivar E.;Fuller, Edwin R., Jr.;Haftel, Jonathan D.;
10:41:40 Preparation, characterization, and electrochemical application of mesoporous copper oxide
DOI:10.1016/j.materresbull.2009.08.001 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:6 AU: Cheng, Liang;Shao, Mingwang;Chen, Dayan;Zhang, Yuzhong;
10:41:41 Controlling the crystallite size and influence of the film thickness on the optical and electrical characteristics of nanocrystalline Cu2S films
DOI:10.1016/j.materresbull.2011.11.035 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:8 AU: Rafea, M. Abdel;Farag, A. A. M.;Roushdy, N.;
10:42:1 Limits to doping in oxides
DOI:10.1103/PhysRevB.83.075205 JN:PHYSICAL REVIEW B PY:2011
TC:45 AU: Robertson, J.;Clark, S. J.;
10:42:2 Influence of orbital contributions to the valence band alignment of Bi2O3, Fe2O3, BiFeO3, and Bi0.5Na0.5TiO3
DOI:10.1103/PhysRevB.88.045428 JN:PHYSICAL REVIEW B PY:2013
TC:8 AU: Li, Shunyi;Morasch, Jan;Klein, Andreas;Chirila, Christina;Pintilie, Lucian;Jia, Lichao;Ellmer, Klaus;Naderer, Michael;Reichmann, Klaus;Groeting, Melanie;Albe, Karsten;
10:42:3 Transparent Conducting Oxides: Electronic Structure-Property Relationship from Photoelectron Spectroscopy with in situ Sample Preparation
DOI:10.1111/jace.12143 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:25 AU: Klein, Andreas;
10:42:4 Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy
DOI:10.1103/PhysRevB.81.165207 JN:PHYSICAL REVIEW B PY:2010
TC:32 AU: Koerber, C.;Krishnakumar, V.;Klein, A.;Panaccione, G.;Torelli, P.;Walsh, A.;Da Silva, J. L. F.;Wei, S. -H.;Egdell, R. G.;Payne, D. J.;
10:42:5 Ab initio modeling of diffusion in indium oxide
DOI:10.1103/PhysRevB.81.195205 JN:PHYSICAL REVIEW B PY:2010
TC:22 AU: Agoston, Peter;Albe, Karsten;
10:42:6 Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology
DOI:10.1063/1.3467780 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:31 AU: Agoston, Peter;Koerber, Christoph;Klein, Andreas;Puska, Martti J.;Nieminen, Risto M.;Albe, Karsten;
10:42:7 Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule
DOI:10.1016/j.tsf.2011.10.055 JN:THIN SOLID FILMS PY:2012
TC:28 AU: Klein, Andreas;
10:42:8 Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3
DOI:10.1021/cm301732t JN:CHEMISTRY OF MATERIALS PY:2012
TC:10 AU: Bayer, Thorsten J. M.;Wachau, Andre;Fuchs, Anne;Deuermeier, Jonas;Klein, Andreas;
10:42:9 Thermodynamic stability, stoichiometry, and electronic structure of bcc-In2O3 surfaces
DOI:10.1103/PhysRevB.84.045311 JN:PHYSICAL REVIEW B PY:2011
TC:14 AU: Agoston, Peter;Albe, Karsten;
10:42:10 Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide
DOI:10.1063/1.3592981 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:24 AU: Deuermeier, Jonas;Gassmann, Juergen;Broetz, Joachim;Klein, Andreas;
10:42:11 PbTiO3/SrTiO3 interface: Energy band alignment and its relation to the limits of Fermi level variation
DOI:10.1103/PhysRevB.84.045317 JN:PHYSICAL REVIEW B PY:2011
TC:15 AU: Schafranek, Robert;Li, Shunyi;Chen, Feng;Wu, Wenbin;Klein, Andreas;
10:42:12 Barrier heights, polarization switching, and electrical fatigue in Pb(Zr, Ti)O-3 ceramics with different electrodes
DOI:10.1063/1.3512969 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Chen, Feng;Schafranek, Robert;Wachau, Andre;Zhukov, Sergey;Glaum, Julia;Granzow, Torsten;von Seggern, Heinz;Klein, Andreas;
10:42:13 Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin
DOI:10.1016/j.tsf.2013.12.009 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Brinzari, V.;Damaskin, I.;Trakhtenbergc, L.;Cho, B. K.;Korotcenkov, G.;
10:42:14 Efficacy of the DFT plus U formalism for modeling hole polarons in perovskite oxides
DOI:10.1103/PhysRevB.90.035204 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Erhart, Paul;Klein, Andreas;Aberg, Daniel;Sadigh, Babak;
10:42:15 Structural, electronic, and optical properties of GaInO3: A hybrid density functional study
DOI:10.1063/1.4863210 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Wang, V.;Xiao, W.;Ma, D-M;Liu, R-J;Yang, C-M;
10:42:16 Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction
DOI:10.1016/j.materresbull.2013.12.013 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:3 AU: Shen, Kai;Wu, Kunjie;Wang, Deliang;
10:42:17 Potential energy landscapes for anion Frenkel-pair formation in ceria and india
DOI:10.1016/j.ssi.2010.08.010 JN:SOLID STATE IONICS PY:2011
TC:12 AU: Walsh, Aron;Woodley, Scott M.;Catlow, C. Richard A.;Sokol, Alexey A.;
10:42:18 Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides
DOI:10.1016/j.tsf.2012.04.075 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Proffit, Diana E.;Harvey, Steven P.;Klein, Andreas;Schafranek, Robert;Emery, Jonathan D.;Buchholz, D. Bruce;Chang, Robert P. H.;Bedzyk, Michael J.;Mason, Thomas O.;
10:42:19 Energy level alignment and electrical properties of (Ba, Sr)TiO3/Al2O3 interfaces for tunable capacitors
DOI:10.1063/1.3459899 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Li, Shunyi;Wachau, Andre;Schafranek, Robert;Klein, Andreas;Zheng, Yuliang;Jakoby, Rolf;
10:42:20 First-principles analysis of structural and opto-electronic properties of indium tin oxide
DOI:10.1063/1.4719980 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Tripathi, Madhvendra Nath;Shida, Kazuhito;Sahara, Ryoji;Mizuseki, Hiroshi;Kawazoe, Yoshiyuki;
10:42:21 Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy
DOI:10.1016/j.apsusc.2011.12.062 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Gassmann, Juergen;Broetz, Joachim;Klein, Andreas;
10:42:22 In situ Hall effect and conductivity measurements of ITO thin films
DOI:10.1016/j.ssi.2013.10.004 JN:SOLID STATE IONICS PY:2014
TC:1 AU: Hohmann, Mareike V.;Wachau, Andre;Klein, Andreas;
10:42:23 Disappearance of Fatigue Heterogeneity Due to an Introduction of La0.8Sr0.2MnO3 Buffer Layers in Modified Lead Zirconate Titanate Ceramics
DOI:10.1111/jace.12563 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:1 AU: Zhang, Yong;Wang, Xiangrong;Ma, Liang;Qv, Fuyang;Zhu, Jia;
10:42:24 Tailoring phase and oxidation states of Cu by varying oxygen gas flow rates in rf sputter deposition for photovoltaic devices
DOI:10.1016/j.apsusc.2011.12.072 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Lim, Kyounga;Park, Juyun;Ramsier, Rex D.;Kim, Do-Geun;Kang, Jae-Wook;Kang, Yong-Cheol;
10:42:25 Fatigue Degradation Underneath the Electrodes and its Role in Ferroelectric Switching in Lead Zirconate Titanate Ceramics
DOI:10.1080/00150193.2011.594723 JN:FERROELECTRICS PY:2011
TC:2 AU: Ma, Liang;Zhang, Yong;Li, Jiwei;
10:42:26 Photocatalytic degradation of phenol in aqueous solution by rare earth-doped SnO2 nanoparticles
DOI:10.1007/s10853-014-8223-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:6 AU: Al-Hamdi, Abdullah M.;Sillanpaa, Mika;Dutta, Joydeep;
10:42:27 Citrate gel process and thermoelectric properties of Ge-doped In2O3 bulk ceramics
DOI:10.1016/j.powtec.2010.08.050 JN:POWDER TECHNOLOGY PY:2011
TC:2 AU: Combe, E.;Chubilleau, C.;Berardan, D.;Guilmeau, E.;Maignan, A.;Raveau, B.;
10:43:1 A Novel Concept for Self-Reporting Materials: Stress Sensitive Photoluminescence in ZnO Tetrapod Filled Elastomers
DOI:10.1002/adma.201203849 JN:ADVANCED MATERIALS PY:2013
TC:46 AU: Jin, Xin;Goetz, Michael;Wille, Sebastian;Mishra, Yogendra Kumar;Adelung, Rainer;Zollfrank, Cordt;
10:43:2 Doped zinc oxide window layers for dye sensitized solar cells
DOI:10.1063/1.4824363 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:19 AU: Kumar, Vinod;Singh, Neetu;Kumar, Vijay;Purohit, L. P.;Kapoor, Avinashi;Ntwaeaborwa, Odireleng M.;Swart, Hendrik C.;
10:43:3 Synthesis and optical properties of flower-like ZnO nanorods by thermal evaporation method
DOI:10.1016/j.apsusc.2011.01.025 JN:APPLIED SURFACE SCIENCE PY:2011
TC:40 AU: Zheng, J. H.;Jiang, Q.;Lian, J. S.;
10:43:4 XPS and optical studies of different morphologies of ZnO nanostructures prepared by microwave methods
DOI:10.1016/j.ceramint.2012.08.075 JN:CERAMICS INTERNATIONAL PY:2013
TC:35 AU: Al-Gaashani, R.;Radiman, S.;Daud, A. R.;Tabet, N.;Al-Douri, Y.;
10:43:5 The role of pH and boron doping on the characteristics of sol gel derived ZnO films
DOI:10.1016/j.jallcom.2011.01.122 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:20 AU: Ilican, Saliha;Yakuphanoglu, Fahrettin;Caglar, Mujdat;Caglar, Yasemin;
10:43:6 Structure and photoluminescence of ultrathin films of SnO2 nanoparticles synthesized by means of pulsed laser deposition
DOI:10.1063/1.3485811 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:32 AU: Gaidi, M.;Hajjaji, A.;Smirani, R.;Bessais, B.;El Khakani, M. A.;
10:43:7 Bandgap tuning in highly c-axis oriented Zn1-xMgxO thin films
DOI:10.1063/1.4809575 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Kumar, Parmod;Malik, Hitendra K.;Ghosh, Anima;Thangavel, R.;Asokan, K.;
10:43:8 Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications
DOI:10.1016/j.jallcom.2012.07.124 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:12 AU: Kumar, Vinod;Singh, R. G.;Singh, Fouran;Purohit, L. P.;
10:43:9 Defect correlated fluorescent quenching and electron phonon coupling in the spectral transition of Eu3+ in CaTiO3 for red emission in display application
DOI:10.1063/1.4876316 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:13 AU: Som, S.;Kunti, A. K.;Kumar, Vinod;Kumar, Vijay;Dutta, S.;Chowdhury, M.;Sharma, S. K.;Terblans, J. J.;Swart, H. C.;
10:43:10 Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes
DOI:10.1016/j.materresbull.2013.07.061 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Kumar, Vinod;Singh, Neetu;Kapoor, Avinashi;Ntwaeaborwa, Odireleng M.;Swart, Hendrik C.;
10:43:11 The role of surface and deep-level defects on the emission of tin oxide quantum dots
DOI:10.1088/0957-4484/25/13/135701 JN:NANOTECHNOLOGY PY:2014
TC:8 AU: Kumar, Vinod;Kumar, Vijay;Som, S.;Neethling, J. H.;Olivier, Ezra;Ntwaeaborwa, O. M.;Swart, H. C.;
10:43:12 Facile synthesis of flower like FePt@ZnO core-shell structure and its bifunctional properties
DOI:10.1016/j.jallcom.2014.01.127 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Majeed, Jerina;Jayakumar, O. D.;Mandal, B. P.;Salunke, H. G.;Naik, R.;Tyagi, A. K.;
10:43:13 Effect of Br+6 ions on the structural, morphological and luminescent properties of ZnO/Si thin films
DOI:10.1016/j.apsusc.2013.04.145 JN:APPLIED SURFACE SCIENCE PY:2013
TC:10 AU: Kumar, Vinod;Singh, Fouran;Ntwaeaborwa, O. M.;Swart, H. C.;
10:43:14 Role of swift heavy ions irradiation on the emission of boron doped ZnO thin films for near white light application
DOI:10.1016/j.jallcom.2014.01.110 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Kumar, Vinod;Kumar, Vijay;Som, S.;Purohit, L. P.;Ntwaeaborwa, O. M.;Swart, H. C.;
10:43:15 Effect of Eu doping on the photoluminescence properties of ZnO nanophosphors for red emission applications
DOI:10.1016/j.apsusc.2014.04.192 JN:APPLIED SURFACE SCIENCE PY:2014
TC:15 AU: Kumar, Vinod;Kumar, Vijay;Som, S.;Duvenhage, M. M.;Ntwaeaborwa, O. M.;Swart, H. C.;
10:43:16 Origin of the red emission in zinc oxide nanophosphors
DOI:10.1016/j.matlet.2013.03.073 JN:MATERIALS LETTERS PY:2013
TC:24 AU: Kumar, Vinod;Swart, H. C.;Ntwaeaborwa, O. M.;Kroon, R. E.;Terblans, J. J.;Shaat, S. K. K.;Yousif, A.;Duvenhage, M. M.;
10:43:17 Synthesis and characterization of aluminum-boron co-doped ZnO nanostructures
DOI:10.1016/j.materresbull.2012.10.042 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:10 AU: Kumar, Vinod;Singh, R. G.;Singh, Neetu;Kapoor, Avinashi;Mehra, R. M.;Purohit, L. P.;
10:43:18 Effect of annealing on the structural, morphological and photoluminescence properties of ZnO thin films prepared by spin coating
DOI:10.1016/j.jcis.2014.04.035 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:17 AU: Kumar, Vinod;Kumar, Vijay;Som, S.;Yousif, A.;Singh, Neetu;Ntwaeaborwa, O. M.;Kapoor, Avinashi;Swart, H. C.;
10:43:19 SnO2 nanocrystals synthesized by microwave-assisted hydrothermal method: towards a relationship between structural and optical properties
DOI:10.1007/s11051-012-0750-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:17 AU: Mendes, Paulo G.;Moreira, Mario L.;Tebcherani, Sergio M.;Orlandi, Marcelo O.;Andres, J.;Li, Maximu S.;Diaz-Mora, Nora;Varela, Jose A.;Longo, Elson;
10:43:20 Softening of phonons by lattice defects and structural strain in heavy ion irradiated nanocrystalline zinc oxide films
DOI:10.1063/1.3651638 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Singh, Fouran;Singh, R. G.;Kumar, Vinod;Khan, S. A.;Pivin, J. C.;
10:43:21 Preparation of Al-doped ZnO thin films as transparent conductive substrate in dye-sensitized solar cell
DOI:10.1016/j.tsf.2011.08.100 JN:THIN SOLID FILMS PY:2012
TC:17 AU: Hirahara, N.;Onwona-Agyeman, B.;Nakao, M.;
10:43:22 Joining the Un-Joinable: Adhesion Between Low Surface Energy Polymers Using Tetrapodal ZnO Linkers
DOI:10.1002/adma.201201780 JN:ADVANCED MATERIALS PY:2012
TC:27 AU: Jin, Xin;Strueben, Jan;Heepe, Lars;Kovalev, Alexander;Mishra, Yogendra K.;Adelung, Rainer;Gorb, Stanislav N.;Staubitz, Anne;
10:43:23 Structural and optical investigations of Eu3+ ions in lead containing alkali fluoroborate glasses
DOI:10.1016/j.optmat.2012.01.027 JN:OPTICAL MATERIALS PY:2012
TC:18 AU: Raju, B. Deva Prasad;Reddy, C. Madhukar;
10:43:24 Effects of oxygen vacancies on the electrochemical performance of tin oxide
DOI:10.1039/c2ta01012g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:14 AU: Li, Na;Du, Kui;Liu, Gang;Xie, Yingpeng;Zhou, Guangmin;Zhu, Jing;Li, Feng;Cheng, Hui-Ming;
10:43:25 Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes
DOI:10.1016/j.tsf.2011.06.029 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Zheng, Hao;Mei, Z. X.;Zeng, Z. Q.;Liu, Y. Z.;Guo, L. W.;Jia, J. F.;Xue, Q. K.;Zhang, Z.;Du, X. L.;
10:43:26 Hierarchically Structured ZnO/Petal Hybrid Composites with Tuned Optoelectronic and Mechanical Properties
DOI:10.1021/am504414q JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Park, Cheolmin;So, Hye-Mi;Jeong, Hyeon Jun;Jeong, Mun Seok;Pippel, Eckhard;Chang, Won Seok;Lee, Seung-Mo;
10:43:27 Effect of magnetic field on the structure and magnetic properties of pulse-laser-deposited FePt films
DOI:10.1016/j.jallcom.2013.08.058 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Chang, H. W.;Yuan, F. T.;Yuan, C. W.;Yu, C. H.;Wang, C. R.;Chang, W. C.;
10:43:28 Band gap and trapping parameters of color tunable Yb3+/Er3+ codoped Y2O3 upconversion phosphor synthesized by combustion route
DOI:10.1007/s10853-013-7769-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:5 AU: Som, S.;Chowdhury, M.;Sharma, S. K.;
10:43:29 Effects of temperature and LT-ZnO template on structural and optical properties of thermal-evaporation deposited ZnO submicron crystals
DOI:10.1016/j.matler.2011.12.082 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Liu, H. F.;Chua, S. J.;Chi, D. Z.;
10:44:1 Nanomaterials via Laser Ablation/Irradiation in Liquid: A Review
DOI:10.1002/adfm.201102295 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:149 AU: Zeng, Haibo;Du, Xi-Wen;Singh, Subhash C.;Kulinich, Sergei A.;Yang, Shikuan;He, Jianping;Cai, Weiping;
10:44:2 Morphology Control of Nanostructures via Surface Reaction of Metal Nanodroplets
DOI:10.1021/ja102967a JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:45 AU: Niu, K. Y.;Yang, J.;Kulinich, S. A.;Sun, J.;Li, H.;Du, X. W.;
10:44:3 Epitaxial ZnO Nanowire-on-Nanoplate Structures as Efficient and Transferable Field Emitters
DOI:10.1002/adma.201302293 JN:ADVANCED MATERIALS PY:2013
TC:40 AU: Song, Jizhong;Kulinich, Sergei A.;Yan, Jian;Li, Zhigang;He, Jianping;Kan, Caixia;Zeng, Haibo;
10:44:4 Complex Oxide-Noble Metal Conjugated Nanoparticles
DOI:10.1002/adma.201204582 JN:ADVANCED MATERIALS PY:2013
TC:7 AU: Guo, Jun-Ling;Chiou, Yao-De;Liang, Wen-I;Liu, Heng-Jui;Chen, Ying-Jiun;Kuo, Wei-Cheng;Tsai, Chih-Ya;Tsai, Kai-An;Kuo, Ho-Hung;Hsieh, Wen-Feng;Juang, Jenh-Yih;Hsu, Yung-Jung;Lin, Hong-Ji;Chen, Chien-Te;Liao, Xue-Pin;Shi, Bi;Chu, Ying-Hao;
10:44:5 Hollow Nanoparticles of Metal Oxides and Sulfides: Fast Preparation via Laser Ablation in Liquid
DOI:10.1021/la1033146 JN:LANGMUIR PY:2010
TC:45 AU: Niu, K. Y.;Yang, J.;Kulinich, S. A.;Sun, J.;Du, X. W.;
10:44:6 Scalable synthesis of hollow Cu2O nanocubes with unique optical properties via a simple hydrolysis-based approach
DOI:10.1039/c2ta00138a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:17 AU: Liu, Hui;Zhou, Yue;Kulinich, Sergei A.;Li, Jia-Jun;Han, Li-Li;Qiao, Shi-Zhang;Du, Xi-Wen;
10:44:7 Revealing Bismuth Oxide Hollow Nanoparticle Formation by the Kirkendall Effect
DOI:10.1021/nl4035362 JN:NANO LETTERS PY:2013
TC:29 AU: Niu, Kai-Yang;Park, Jungwon;Zheng, Haimei;Aivisatos, A. Paul;
10:44:8 Nanoparticle formation in a cavitation bubble after pulsed laser ablation in liquid studied with high time resolution small angle x-ray scattering
DOI:10.1063/1.4750250 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Ibrahimkutty, Shyjumon;Wagener, Philipp;Menzel, Andreas;Plech, Anton;Barcikowski, Stephan;
10:44:9 Effects of oxidizing medium on the composition, morphology and optical properties of copper oxide nanoparticles produced by pulsed laser ablation
DOI:10.1016/j.apsusc.2013.09.038 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Gondal, M. A.;Qahtan, Talal F.;Dastageer, M. A.;Saleh, Tawfik A.;Maganda, Yasin W.;Anjum, D. H.;
10:44:10 Laser synthesis of gold/oxide nanocomposites
DOI:10.1039/b918945a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:23 AU: Lin, Feng;Yang, Jing;Lu, Su-Hong;Niu, Kai-Yang;Liu, Yuan;Sun, Jing;Du, Xi-Wen;
10:44:11 Slow dynamics of ablated zone observed around the density fluctuation ridge of fluid medium
DOI:10.1063/1.4834517 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Koizumi, Masato;Kulinich, Sergei A.;Shimizu, Yoshiki;Ito, Tsuyohito;
10:44:12 Pressure effect on ZnO nanoparticles prepared via laser ablation in water
DOI:10.1063/1.4775733 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Kulinich, S. A.;Kondo, Takahiro;Shimizu, Yoshiki;Ito, Tsuyohito;
10:44:13 One-step synthesis of MgO hollow nanospheres with blue emission
DOI:10.1088/0957-4484/21/29/295604 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Niu, Kai-Yang;Yang, Jing;Sun, Jing;Du, Xi-Wen;
10:44:14 Highly stable sub-5 nm Sn6O4(OH)(4) nanocrystals with ultrahigh activity as advanced photocatalytic materials for photodegradation of methyl orange
DOI:10.1088/0957-4484/25/13/135702 JN:NANOTECHNOLOGY PY:2014
TC:1 AU: Xiao, J.;Wu, Q. L.;Liu, P.;Liang, Y.;Li, H. B.;Wu, M. M.;Yang, G. W.;
10:44:15 Violet-blue photoluminescence from Si nanoparticles with zinc-blende structure synthesized by laser ablation in liquids
DOI:10.1063/1.4794203 JN:AIP ADVANCES PY:2013
TC:3 AU: Liu, P.;Liang, Y.;Li, H. B.;Xiao, J.;He, T.;Yang, G. W.;
10:44:16 Pb nanoparticle tipped ZnO nanowires heterostructures by long-pulse-width laser ablation of binary metal target in diluted gas
DOI:10.1016/j.matlet.2013.12.081 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Tian, Fei;Zhao, Yongguang;Liu, Yinan;Cao, Hongmei;Zhao, Jing;Lu, Xiaozuo;
10:44:17 A General Strategy To Fabricate Simple Polyoxometalate Nanostructures: Electrochemistry-Assisted Laser Ablation in Liquid
DOI:10.1021/nn2007282 JN:ACS NANO PY:2011
TC:28 AU: Liu, Pu;Liang, Ying;Lin, Xianzhong;Wang, Chengxin;Yang, Guowei;
10:44:18 Interface-dominated galvanic replacement reactions in the Zn/Cu2+ system
DOI:10.1088/0957-4484/23/36/365601 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Liu, Hui;Li, Jia-Jun;Kulinich, Sergei A.;Li, Xiang;Qiao, Shi Zhang;Du, Xi-Wen;
10:44:19 Pulsed laser ablation plasmas generated in CO2 under high-pressure conditions up to supercritical fluid
DOI:10.1063/1.4767839 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Kato, Toru;Stauss, Sven;Kato, Satoshi;Urabe, Keiichiro;Baba, Motoyoshi;Suemoto, Tohru;Terashima, Kazuo;
10:44:20 Synthesis of higher diamondoids by pulsed laser ablation plasmas in supercritical CO2
DOI:10.1063/1.3599887 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Nakahara, Sho;Stauss, Sven;Kato, Toru;Sasaki, Takehiko;Terashima, Kazuo;
10:44:21 Influence of the liquid environment on the products formed from the laser ablation of tin
DOI:10.1007/s00339-013-7635-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Musaev, O. R.;Driver, M. S.;Sutter, E. A.;Caruso, A. N.;Wrobel, J. M.;Kruger, M. B.;
10:44:22 Synthesis of silver nanoparticles and antimony oxide nanocrystals by pulsed laser ablation in liquid media
DOI:10.1007/s00339-012-7157-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Mendivil, M. I.;Krishnan, B.;Sanchez, F. A.;Martinez, S.;Aguilar-Martinez, J. A.;Castillo, G. A.;Garcia-Gutierrez, D. I.;Shaji, S.;
10:44:23 Dynamics of pulsed laser ablation in high-density carbon dioxide including supercritical fluid state
DOI:10.1063/1.4824538 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Urabe, Keiichiro;Kato, Toru;Stauss, Sven;Himeno, Shohei;Kato, Satoshi;Muneoka, Hitoshi;Baba, Motoyoshi;Suemoto, Tohru;Terashima, Kazuo;
10:44:24 Cetyltrimethyl ammonium bromide assisted hydrothermal growth of hematite hollow cubes
DOI:10.1016/j.materresbull.2010.07.001 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:3 AU: Wang, Wei-Wei;Yao, Jia-Liang;
10:44:25 Nanostructured hydrocerussite compound (Pb-3(CO3)(2)(OH)(2)) prepared by laser ablation technique in liquid environment
DOI:10.1016/j.materresbull.2013.08.030 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: da Cunha, D. L.;Pereira, G. F. C.;Felix, J. F.;Albino Aguiar, J.;de Azevedo, W. M.;
10:44:26 The structural and optical properties of supercontinuum emitting Si nanocrystals prepared by laser ablation in water
DOI:10.1063/1.4768210 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Alima, Dana;Estrin, Yevgeni;Rich, Daniel H.;Bar, Ilana;
10:44:27 Optimization of Rear Local Al-Contacts on High Efficiency Commercial PERC Solar Cells with Dot and Line Openings
DOI:10.1155/2014/515969 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Liu, Peisheng;Zhang, Xiaolong;Sun, Ling;Dai, Shanshan;Yu, Chenhui;Luo, Xiangdong;
10:44:28 Structure and size control of ZnO nanoparticles by applying high pressure to ambient liquid in liquid-phase laser ablation
DOI:10.1007/s00339-012-7152-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Soliman, W.;Takada, N.;Koshizaki, N.;Sasaki, K.;
10:44:29 Effect of picosecond laser induced cavitation bubbles generated on Au targets in a nanoparticle production set-up
DOI:10.1007/s00339-012-7165-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Tiberi, M.;Simonelli, A.;Cristoforetti, G.;Marsili, P.;Giammanco, F.;Giorgetti, E.;
10:44:30 Syntheses, Structures, and Magnetic and Thermoelectric Properties of Double-Tunnel Tellurides: A(x)RE(2)Cu(6-x)Te(6) (A = K-Cs; RE = La-Nd)
DOI:10.1021/cm201574a JN:CHEMISTRY OF MATERIALS PY:2011
TC:14 AU: Meng, Chang-Yu;Chen, Hong;Wang, Peng;Chen, Ling;
10:44:31 Single-Crystal MgO Hollow Nanospheres Formed in RF Impulse Discharge Plasmas
DOI:10.1155/2012/691874 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Iizuka, Satoru;Muraoka, Takumasa;
10:44:32 Graphitic encapsulation of MgO and Fe3C nanoparticles in the reaction of iron pentacarbonyl with magnesium
DOI:10.1016/j.matchar.2013.04.014 JN:MATERIALS CHARACTERIZATION PY:2013
TC:1 AU: Dyjak, Slawomir;Cudzilo, Stanislaw;Polanski, Marek;Budner, Boguslaw;Bystrzycki, Jerzy;
10:45:1 Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
DOI:10.1103/PhysRevB.84.115202 JN:PHYSICAL REVIEW B PY:2011
TC:42 AU: Look, D. C.;Leedy, K. D.;Vines, L.;Svensson, B. G.;Zubiaga, A.;Tuomisto, F.;Doutt, D. R.;Brillson, L. J.;
10:45:2 Impurity complexes and conductivity of Ga-doped ZnO
DOI:10.1103/PhysRevB.84.075201 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Demchenko, D. O.;Earles, B.;Liu, H. Y.;Avrutin, V.;Izyumskaya, N.;Oezguer, Ue.;Morkoc, H.;
10:45:3 Mobility analysis of highly conducting thin films: Application to ZnO
DOI:10.1063/1.3310043 JN:APPLIED PHYSICS LETTERS PY:2010
TC:50 AU: Look, D. C.;Leedy, K. D.;Tomich, D. H.;Bayraktaroglu, B.;
10:45:4 Highly conductive ZnO grown by pulsed laser deposition in pure Ar
DOI:10.1063/1.3481372 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Scott, Robin C.;Leedy, Kevin D.;Bayraktaroglu, Burhan;Look, David C.;Zhang, Yong-Hang;
10:45:5 Enhanced Electron Mobility Due to Dopant-Defect Pairing in Conductive ZnMgO
DOI:10.1002/adfm.201303204 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:3 AU: Ke, Yi;Lany, Stephan;Berry, Joseph J.;Perkins, John D.;Parilla, Philip A.;Zakutayev, Andriy;Ohno, Tim;O'Hayre, Ryan;Ginley, David S.;
10:45:6 Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy
DOI:10.1063/1.4720456 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Liu, H. Y.;Avrutin, V.;Izyumskaya, N.;Oezgur, Ue.;Yankovich, A. B.;Kvit, A. V.;Voyles, P. M.;Morkoc, H.;
10:45:7 Compensation in Al-Doped ZnO by Al-Related Acceptor Complexes: Synchrotron X-Ray Absorption Spectroscopy and Theory
DOI:10.1103/PhysRevLett.110.055502 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:12 AU: T-Thienprasert, J.;Rujirawat, S.;Klysubun, W.;Duenow, J. N.;Coutts, T. J.;Zhang, S. B.;Look, D. C.;Limpijumnong, S.;
10:45:8 Zinc oxide (ZnO) grown on sapphire substrate using dual-plasma-enhanced metal organic vapor deposition (DPEMOCVD) and its application
DOI:10.1016/j.apsusc.2012.07.163 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Lei, Po-Hsun;Wu, Hsiang-Ming;Hsu, Chia-Ming;Lee, Yuan-Chih;
10:45:9 Stable highly conductive ZnO via reduction of Zn vacancies
DOI:10.1063/1.4748869 JN:APPLIED PHYSICS LETTERS PY:2012
TC:18 AU: Look, D. C.;Droubay, T. C.;Chambers, S. A.;
10:45:10 Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films
DOI:10.1063/1.4841355 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Zakutayev, Andriy;Perry, Nicola H.;Mason, Thomas O.;Ginley, David S.;Lany, Stephan;
10:45:11 ZnO plasmonics for telecommunications
DOI:10.1063/1.4804984 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Look, D. C.;Leedy, K. D.;
10:45:12 Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and V-Zn in ZnO:Ga
DOI:10.1063/1.4884347 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Look, David C.;Leedy, Kevin D.;Agresta, Donald L.;
10:45:13 On the temperature dependence of mobility in hydrogenated indium-doped ZnO thin films
DOI:10.1016/j.actamat.2014.05.048 JN:ACTA MATERIALIA PY:2014
TC:1 AU: Singh, Anil;Chaudhary, Sujeet;Pandya, Dinesh K.;
10:45:14 Interplay of native point defects with ZnO Schottky barriers and doping
DOI:10.1116/1.4732531 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Brillson, Leonard J.;Dong, Yufeng;Tuomisto, Filip;Svensson, Bengt G.;Kuznetsov, Andrei Yu.;Doutt, Daniel;Mosbacker, H. Lee;Cantwell, Gene;Zhang, Jizhi;Song, Jin Joo;Fang, Z. -Q.;Look, David C.;
10:45:15 Defects in highly conductive ZnO for transparent electrodes and plasmonics
DOI:10.1063/1.4837956 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Look, D. C.;Leedy, K. D.;Thomson, D. B.;Wang, B.;
10:45:16 Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates
DOI:10.1016/j.tsf.2014.02.013 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Makino, Hisao;Song, Huaping;Yamamoto, Tetsuya;
10:45:17 Recrystallization of Highly-Mismatched BexZn1-xO Alloys: Formation of a Degenerate Interface
DOI:10.1021/am5043388 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Park, Dae-Sung;Farahani, Sepehr K. Vasheghani;Walker, Marc;Mudd, James J.;Wang, Haiyuan;Krupski, Aleksander;Thorsteinsson, Einar B.;Seghier, Djelloul;Choi, Chel-Jong;Youn, Chang-Ju;McConville, Chris F.;
10:45:18 Stable interstitial dopant-vacancy complexes in ZnO
DOI:10.1103/PhysRevB.85.195207 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Puchala, B.;Morgan, D.;
10:45:19 InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer
DOI:10.1063/1.3377872 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Tu, S. H.;Lan, C. J.;Wang, S. H.;Lee, M. L.;Chang, K. H.;Lin, R. M.;Chang, J. Y.;Sheu, J. K.;
10:45:20 Molecular beam epitaxy of n-Zn(Mg)O as a low-damping plasmonic material at telecommunication wavelengths
DOI:10.1063/1.4804366 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Sadofev, Sergey;Kalusniak, Sascha;Schaefer, Peter;Henneberger, Fritz;
10:45:21 Resonant interaction of molecular vibrations and surface plasmon polaritons: The weak coupling regime
DOI:10.1103/PhysRevB.90.125423 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Kalusniak, S.;Sadofev, S.;Henneberger, F.;
10:45:22 Optimization of Al-doped ZnO films for low loss plasmonic materials at telecommunication wavelengths
DOI:10.1063/1.4802901 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Kim, H.;Osofsky, M.;Prokes, S. M.;Glembocki, O. J.;Pique, A.;
10:45:23 On the variations of optical property and electronic structure in heavily Al-doped ZnO films during double-step growth process
DOI:10.1063/1.4862201 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Hu, Q. C.;Ding, K.;Zhang, J. Y.;Yan, F. P.;Pan, D. M.;Huang, F.;Chiou, J. W.;
10:45:24 Donor behavior of Sb in ZnO
DOI:10.1063/1.4742984 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Liu, H. Y.;Izyumskaya, N.;Avrutin, V.;Oezguer, Ue;Yankovich, A. B.;Kvit, A. V.;Voyles, P. M.;Morkoc, H.;
10:45:25 Ga and Al doped zinc oxide thin films for transparent conducting oxide applications: Structure-property correlations
DOI:10.1063/1.4861420 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Temizer, Namik K.;Nori, Sudhakar;Narayan, Jagdish;
10:45:26 Effects of Ar vs. O-2 ambient on pulsed-laser-deposited Ga-doped ZnO
DOI:10.1016/j.jcrysgro.2011.03.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Scott, Robin C.;Leedy, Kevin D.;Bayraktaroglu, Burhan;Look, David C.;Zhang, Yong-Hang;
10:45:27 Ga-doped ZnO grown by pulsed laser deposition in H-2: The roles of Ga and H
DOI:10.1116/1.3523296 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:5 AU: Look, David C.;Droubay, Timothy C.;McCloy, John S.;Zhu, Zihua;Chambers, Scott A.;
10:45:28 ZnO as a Tunable Metal: New Types of Surface Plasmon Polaritons
DOI:10.1103/PhysRevLett.112.137401 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:1 AU: Kalusniak, S.;Sadofev, S.;Henneberger, F.;
10:45:29 First-principles study of vacancy-assisted impurity diffusion in ZnO
DOI:10.1063/1.4894195 JN:APL MATERIALS PY:2014
TC:3 AU: Steiauf, Daniel;Lyons, John L.;Janotti, Anderson;Van de Walle, Chris G.;
10:45:30 XPS study of arsenic doped ZnO grown by Atomic Layer Deposition
DOI:10.1016/j.jallcom.2013.08.061 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Snigurenko, D.;Jakiela, R.;Guziewicz, E.;Przezdziecka, E.;Stachowicz, M.;Kopalko, K.;Barcz, A.;Lisowski, W.;Sobczak, J. W.;Krawczyk, M.;Jablonski, A.;
10:45:31 Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition
DOI:10.1007/s11664-010-1396-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:5 AU: Scott, Robin C.;Leedy, Kevin D.;Bayraktaroglu, Burhan;Look, David C.;Smith, David J.;Ding, Ding;Lu, Xianfeng;Zhang, Yong-Hang;
10:45:32 Stable interstitial dopant-vacancy complexes in ZnO (vol 85, 195207, 2012)
DOI:10.1103/PhysRevB.87.079908 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Puchala, B.;Morgan, D.;
10:45:33 Mott transition in Ga-doped MgxZn1-xO: A direct observation
DOI:10.1016/j.mseb.2010.03.078 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:2 AU: Wei, Wei;Nori, Sudhakar;Jin, Chunming;Narayan, Jagdish;Narayan, Roger J.;Ponarin, Dmtri;Smirnov, Alex;
10:46:1 Room Temperature Excitonic Whispering Gallery Mode Lasing from High-Quality Hexagonal ZnO Microdisks
DOI:10.1002/adma.201100423 JN:ADVANCED MATERIALS PY:2011
TC:87 AU: Chen, Rui;Ling, Bo;Sun, Xiao Wei;Sun, Han Dong;
10:46:2 ZnO-Microrod/p-GaN Heterostructured Whispering-Gallery-Mode Microlaser Diodes
DOI:10.1002/adma.201102184 JN:ADVANCED MATERIALS PY:2011
TC:63 AU: Dai, Jun;Xu, Chun Xiang;Sun, Xiao Wei;
10:46:3 Whispering Gallery Mode Lasing from Zinc Oxide Hexagonal Nanodisks
DOI:10.1021/nn9018174 JN:ACS NANO PY:2010
TC:93 AU: Gargas, Daniel J.;Moore, Michael C.;Ni, Adrian;Chang, Shu-Wei;Zhang, Zhaoyu;Chuang, Shun-Lien;Yang, Peidong;
10:46:4 Surface plasmon-enhanced light emission using silver nanoparticles embedded in ZnO
DOI:10.1063/1.3480417 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Xiao, X. H.;Ren, F.;Zhou, X. D.;Peng, T. C.;Wu, W.;Peng, X. N.;Yu, X. F.;Jiang, C. Z.;
10:46:5 Exciton and electron-hole plasma lasing in ZnO dodecagonal whispering-gallery-mode microcavities at room temperature
DOI:10.1063/1.3460281 JN:APPLIED PHYSICS LETTERS PY:2010
TC:26 AU: Dai, J.;Xu, C. X.;Wu, P.;Guo, J. Y.;Li, Z. H.;Shi, Z. L.;
10:46:6 Controllable fabrication and optical properties of Sn-doped ZnO hexagonal microdisk for whispering gallery mode microlaser
DOI:10.1063/1.4820432 JN:APL MATERIALS PY:2013
TC:5 AU: Dai, J.;Xu, C. X.;Xu, X. Y.;Li, J. T.;Guo, J. Y.;Lin, Y.;
10:46:7 Hybrid material based on plasmonic nanodisks decorated ZnO and its application on nanoscale lasers
DOI:10.1088/0957-4484/25/29/295203 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Chen, Zuxin;Lai, Boya;Zhang, Junming;Wang, Guoping;Chu, Sheng;
10:46:8 Noble metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence
DOI:10.1063/1.4739516 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Chu, Sheng;Ren, Jingjian;Yan, Dong;Huang, Jian;Liu, Jianlin;
10:46:9 Ultraviolet whispering-gallery-mode lasing in ZnO micro/nano sphere crystal
DOI:10.1063/1.4768696 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Okazaki, Kota;Shimogaki, Tetsuya;Fusazaki, Koshi;Higashihata, Mitsuhiro;Nakamura, Daisuke;Koshizaki, Naoto;Okada, Tatsuo;
10:46:10 Observation of whispering gallery modes from hexagonal ZnO microdisks using cathodoluminescence spectroscopy
DOI:10.1063/1.4826481 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Choi, Sumin;Ton-That, Cuong;Phillips, Matthew R.;Aharonovich, Igor;
10:46:11 Single-crystalline tower-like ZnO microrod UV lasers
DOI:10.1039/c2tc00070a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:18 AU: Dong, Hongxing;Liu, Yang;Lu, Jian;Chen, Zhanghai;Wang, Jun;Zhang, Long;
10:46:12 Self-Assembled Flexible Microlasers
DOI:10.1002/adma.201103409 JN:ADVANCED MATERIALS PY:2012
TC:17 AU: Ta, Van Duong;Chen, Rui;Sun, Han Dong;
10:46:13 Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities
DOI:10.1063/1.3579140 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Dai, J.;Xu, C. X.;Sun, X. W.;Zhang, X. H.;
10:46:14 Interfacial refractive index sensing using visible-excited intrinsic zinc oxide photoluminescence coupled to whispering gallery modes
DOI:10.1063/1.4817273 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Moirangthem, Rakesh Singh;Erbe, Andreas;
10:46:15 Localized surface plasmon resonance enhanced ultraviolet emission and F-P lasing from single ZnO microflower
DOI:10.1063/1.4898007 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lin, Yi;Li, Jitao;Xu, Chunxiang;Fan, Xuemei;Wang, Baoping;
10:46:16 Graphene Surface Plasmon Induced Optical Field Confinement and Lasing Enhancement in ZnO Whispering-Gallery Microcavity
DOI:10.1021/am502043f JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Li, Jitao;Xu, Chunxiang;Nan, Haiyan;Jiang, Mingming;Gao, Guangyu;Lin, Yi;Dai, Jun;Zhu, Gangyi;Ni, Zhenhua;Wang, Shufeng;Li, Yan;
10:46:17 Visible whispering-gallery modes in ZnO microwires with varied cross sections
DOI:10.1063/1.3610521 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Dai, Guozhang;Zhang, Yongyou;Liu, Ruibin;Wan, Qiang;Zhang, Qinglin;Pan, Anlian;Zou, Bingsuo;
10:46:18 Lasing Behavior Modulation for ZnO Whispering-Gallery Microcavities
DOI:10.1021/am301800k JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:11 AU: Zhu, Gangyi;Xu, Chunxiang;Cai, Lisha;Li, Jitao;Shi, Zengliang;Lin, Yi;Chen, Guofeng;Ding, Tao;Tian, Zhengshan;Dai, Jun;
10:46:19 The corner effect in hexagonal whispering gallery microresonators
DOI:10.1063/1.4757572 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Dietrich, C. P.;Lange, M.;Boentgen, T.;Grundmann, M.;
10:46:20 Role of recombination pathway competition in spatially resolved cathodoluminescence spectroscopy
DOI:10.1063/1.4904809 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Toth, Milos;Zachreson, Cameron;Aharonovich, Igor;
10:46:21 Determination of the refractive index of single crystal bulk samples and micro-structures
DOI:10.1016/j.tsf.2010.12.047 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Schmidt-Grund, R.;Kuehne, P.;Czekalla, C.;Schumacher, D.;Sturm, C.;Grundmann, M.;
10:46:22 Application of self-assembled hemispherical microlasers as gas sensors
DOI:10.1063/1.4788751 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Ta, V. D.;Chen, R.;Nguyen, D. M.;Sun, H. D.;
10:46:23 Phonon-assisted lasing in ZnO microwires at room temperature
DOI:10.1063/1.4902898 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Michalsky, T.;Wille, M.;Dietrich, C. P.;Roeder, R.;Ronning, C.;Schmidt-Grund, R.;Grundmann, M.;
10:46:24 Thermodynamic-effect-induced growth, optical modulation and UV lasing of hierarchical ZnO Fabry-Perot resonators
DOI:10.1039/c1jm14330a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:2 AU: Dong, Hongxing;Sun, Shulin;Sun, Liaoxin;Zhou, Weihang;Zhou, Lei;Shen, Xuechu;Chen, Zhanghai;Wang, Jun;Zhang, Long;
10:46:25 Response to "Comment on 'Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities'" [Appl. Phys. Lett. 99, 136101 (2011)]
DOI:10.1063/1.3643460 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Dai, J.;Xu, C. X.;Sun, X. W.;Zhang, X. H.;
10:46:26 Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)]
DOI:10.1063/1.3643457 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Dietrich, C. P.;Grundmann, M.;
10:46:27 Single-crystalline hexagonal ZnO microtube optical resonators
DOI:10.1039/c0jm00172d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:11 AU: Dong, Hongxing;Chen, Zhanghai;Sun, Liaoxin;Xie, Wei;Tan, H. Hoe;Lu, Jian;Jagadish, Chennupati;Shen, Xuechu;
10:46:28 Surface modification of monocrystalline zinc oxide induced by high-density electronic excitation
DOI:10.1063/1.3671006 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Museur, Luc;Manousaki, Alexandra;Anglos, Demetrios;Kanaev, Andrei V.;
10:46:29 Controlled growth and optical properties of hexagonal ZnO microdisks synthesized at ambient atmosphere
DOI:10.1016/j.matlet.2012.08.118 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Cai, Lisha;Chen, San;Zhang, Xuejin;Zhu, Yongyuan;
10:46:30 Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells
DOI:10.1063/1.4873161 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kim, T.;Liu, B.;Smith, R.;Athanasiou, M.;Gong, Y.;Wang, T.;
10:46:31 An analysis of coupling between a whispering gallery mode laser in an elliptical microring and the dominant mode in the coaxially oriented elliptical optical fiber
DOI:10.1063/1.3284947 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Baktur, Reyhan;Pearson, L. Wilson;Ballato, John;
10:46:32 Whispering gallery mode enhanced luminescence from an individual ZnO micro- and nanoscaled optical resonator
DOI:10.1063/1.3582125 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Yang, Y. H.;Dong, J. W.;Wang, N. W.;Yang, G. W.;
10:46:33 An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications
DOI:10.1016/j.tsf.2014.02.010 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Fricke, Lennart;Bontgen, Tammo;Lorbeer, Jan;Bundesmann, Carsten;Schmidt-Grund, Rudiger;Grundmann, Marius;
10:47:1 Vacancy defect and defect cluster energetics in ion-implanted ZnO
DOI:10.1103/PhysRevB.81.081201 JN:PHYSICAL REVIEW B PY:2010
TC:39 AU: Dong, Yufeng;Tuomisto, F.;Svensson, B. G.;Kuznetsov, A. Yu.;Brillson, Leonard J.;
10:47:2 P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process
DOI:10.1063/1.4751467 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Myers, M. A.;Myers, M. T.;General, M. J.;Lee, J. H.;Shao, L.;Wang, H.;
10:47:3 Lithium and electrical properties of ZnO
DOI:10.1063/1.3415551 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:28 AU: Vines, L.;Monakhov, E. V.;Schifano, R.;Mtangi, W.;Auret, F. D.;Svensson, B. G.;
10:47:4 Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2
DOI:10.1116/1.3456123 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:37 AU: Baer, D. R.;Engelhard, M. H.;Lea, A. S.;Nachimuthu, P.;Droubay, T. C.;Kim, J.;Lee, B.;Mathews, C.;Opila, R. L.;Saraf, L. V.;Stickle, W. F.;Wallace, R. M.;Wright, B. S.;
10:47:5 Identification of substitutional Li in n-type ZnO and its role as an acceptor
DOI:10.1103/PhysRevB.83.245208 JN:PHYSICAL REVIEW B PY:2011
TC:24 AU: Johansen, K. M.;Zubiaga, A.;Makkonen, I.;Tuomisto, F.;Neuvonen, P. T.;Knutsen, K. E.;Monakhov, E. V.;Kuznetsov, A. Yu.;Svensson, B. G.;
10:47:6 Effect of implanted species on thermal evolution of ion-induced defects in ZnO
DOI:10.1063/1.4866055 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Azarov, A. Yu;Hallen, A.;Du, X. L.;Rauwel, P.;Kuznetsov, A. Yu.;Svensson, B. G.;
10:47:7 Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO
DOI:10.1063/1.3679708 JN:APPLIED PHYSICS LETTERS PY:2012
TC:19 AU: Zhang, Z.;Knutsen, K. E.;Merz, T.;Kuznetsov, A. Yu.;Svensson, B. G.;Brillson, L. J.;
10:47:8 Nitrogen and vacancy clusters in ZnO
DOI:10.1557/jmr.2013.195 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:5 AU: Tuomisto, Filip;Rauch, Christian;Wagner, Markus R.;Hoffmann, Axel;Eisermann, Sebastian;Meyer, Bruno K.;Kilanski, Lukasz;Tarun, Marianne C.;McCluskey, Matthew D.;
10:47:9 Impurity-limited lattice disorder recovery in ion-implanted ZnO
DOI:10.1063/1.4768289 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Azarov, A. Yu.;Svensson, B. G.;Kuznetsov, A. Yu.;
10:47:10 Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO
DOI:10.1063/1.3537917 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Perillat-Merceroz, Guillaume;Gergaud, Patrice;Marotel, Pascal;Brochen, Stephane;Jouneau, Pierre-Henri;Feuillet, Guy;
10:47:11 Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
DOI:10.1103/PhysRevB.86.121203 JN:PHYSICAL REVIEW B PY:2012
TC:25 AU: Knutsen, K. E.;Galeckas, A.;Zubiaga, A.;Tuomisto, F.;Farlow, G. C.;Svensson, B. G.;Kuznetsov, A. Yu.;
10:47:12 Defect microstructure in heavy-ion-bombarded (0001) ZnO
DOI:10.1016/j.actamat.2012.07.046 JN:ACTA MATERIALIA PY:2012
TC:4 AU: Myers, M. T.;Charnvanichborikarn, S.;Wei, C. C.;Luo, Z. P.;Aitkaliyeva, A.;Shao, L.;Kucheyev, S. O.;
10:47:13 Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions
DOI:10.1063/1.3467532 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Azarov, A. Yu.;Svensson, B. G.;Hallen, A.;Du, X. L.;Kuznetsov, A. Yu.;
10:47:14 Defect formation and thermal stability of H in high dose H implanted ZnO
DOI:10.1063/1.4819216 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Chan, K. S.;Vines, L.;Johansen, K. M.;Monakhov, E. V.;Ye, J. D.;Parkinson, P.;Jagadish, C.;Svensson, B. G.;Wong-Leung, J.;
10:47:15 Effect of the surface on ion-beam damage build-up in ZnO
DOI:10.1016/j.scriptamat.2012.03.021 JN:SCRIPTA MATERIALIA PY:2012
TC:6 AU: Myers, M. T.;Charnvanichborikarn, S.;Shao, L.;Kucheyev, S. O.;
10:47:16 Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO
DOI:10.1063/1.4818712 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Zhang, Zhichun;Quemener, V.;Lin, C. -H.;Svensson, B. G.;Brillson, L. J.;
10:47:17 Crucial role of implanted atoms on dynamic defect annealing in ZnO
DOI:10.1063/1.4863817 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Azarov, A. Yu;Wendler, E.;Kuznetsov, A. Yu;Svensson, B. G.;
10:47:18 Structural recovery of ion implanted ZnO nanowires
DOI:10.1063/1.4704697 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Perillat-Merceroz, G.;Donatini, F.;Thierry, R.;Jouneau, P. -H.;Ferret, P.;Feuillet, G.;
10:47:19 Enhanced radiation tolerance of non-polar-terminated ZnO
DOI:10.1063/1.4842116 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Charnvanichborikarn, S.;Myers, M. T.;Shao, L.;Kucheyev, S. O.;
10:47:20 Defect evolution and impurity migration in Na-implanted ZnO
DOI:10.1103/PhysRevB.84.205202 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Neuvonen, Pekka T.;Vines, Lasse;Venkatachalapathy, Vishnukanthan;Zubiaga, Asier;Tuomisto, Filip;Hallen, Anders;Svensson, Bengt G.;Kuznetsov, Andrej Yu.;
10:47:21 Tailoring radiation damage in ZnO by surface modification
DOI:10.1016/j.apsusc.2013.03.045 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Myers, M. T.;Charnvanichborikarn, S.;Myers, M. A.;Lee, J. H.;Wang, H.;Biener, M. M.;Shao, L.;Kucheyev, S. O.;
10:47:22 Impurity Sublattice Localization in ZnO Revealed by Li Marker Diffusion
DOI:10.1103/PhysRevLett.110.175503 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:2 AU: Azarov, A. Yu.;Knutsen, K. E.;Neuvonen, P. T.;Vines, L.;Svensson, B. G.;Kuznetsov, A. Yu.;
10:47:23 Intrinsic Point-Defect Balance in Self-Ion-Implanted ZnO
DOI:10.1103/PhysRevLett.110.015501 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:6 AU: Neuvonen, Pekka T.;Vines, Lasse;Svensson, Bengt G.;Kuznetsov, Andrej Yu;
10:47:24 H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry
DOI:10.1103/PhysRevB.84.115203 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: Johansen, K. M.;Zubiaga, A.;Tuomisto, F.;Monakhov, E. V.;Kuznetsov, A. Yu;Svensson, B. G.;
10:47:25 Thermal stability of the OH-Li complex in hydrothermally grown single crystalline ZnO
DOI:10.1063/1.3522886 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Johansen, K. M.;Haug, H.;Lund, E.;Monakhov, E. V.;Svensson, B. G.;
10:47:26 Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam
DOI:10.1063/1.4789010 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Jiang, M.;Wang, D. D.;Chen, Z. Q.;Kimura, S.;Yamashita, Y.;Mori, A.;Uedono, A.;
10:47:27 Li and OH-Li Complexes in Hydrothermally Grown Single-Crystalline ZnO
DOI:10.1007/s11664-010-1404-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:5 AU: Johansen, K. M.;Haug, H.;Prytz, O.;Neuvonen, P. T.;Knutsen, K. E.;Vines, L.;Monakhov, E. V.;Kuznetsov, A. Yu.;Svensson, B. G.;
10:47:28 Doping properties of hydrogen in ZnO
DOI:10.1557/jmr.2012.192 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:3 AU: Weston, L.;Ton-That, C.;Phillips, M. R.;
10:47:29 Thermally induced surface instability in ion-implanted MgxZn1-xO films
DOI:10.1103/PhysRevB.84.014114 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Azarov, A. Yu.;Hallen, A.;Du, X. L.;Liu, Z. L.;Svensson, B. G.;Kuznetsov, A. Yu.;
10:47:30 Diffusion and configuration of Li in ZnO
DOI:10.1063/1.4773829 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Knutsen, K. E.;Johansen, K. M.;Neuvonen, P. T.;Svensson, B. G.;Kuznetsov, A. Yu;
10:47:31 Effects of diffusion temperature and diffusion time on fabrication of Na-diffused p-type ZnO thin films
DOI:10.1016/j.matlet.2012.04.092 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Liu, Huibin;Pan, Xinhua;Ding, Ping;Ye, Zhizhen;He, Haiping;Huang, Jingyun;
10:47:32 Understanding the presence of vacancy clusters in ZnO from a kinetic perspective
DOI:10.1063/1.4884653 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Bang, Junhyeok;Kim, Youg-Sung;Park, C. H.;Gao, F.;Zhang, S. B.;
10:47:33 Ion-beam-induced damage formation in CdTe
DOI:10.1063/1.3592265 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Rischau, C. W.;Schnohr, C. S.;Wendler, E.;Wesch, W.;
10:47:34 Rapid thermal annealing of rare earth implanted ZnO epitaxial layers
DOI:10.1016/j.optmat.2010.10.009 JN:OPTICAL MATERIALS PY:2011
TC:11 AU: Miranda, S. M. C.;Peres, M.;Monteiro, T.;Alves, E.;Sun, H. D.;Geruschke, T.;Vianden, R.;Lorenz, K.;
10:47:35 Effects of annealing temperature on the structure, photoluminescence and ferromagnetism properties of Cr-implanted ZnO nanowires
DOI:10.1007/s00339-012-7027-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:0 AU: Zou, C. W.;Shao, L. X.;Fu, D. J.;
10:47:36 Effect of pre-existing disorder on surface amorphization in GaN
DOI:10.1063/1.3462380 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Azarov, A. Yu.;Titov, A. I.;Kucheyev, S. O.;
10:47:37 Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics
DOI:10.1116/1.3543712 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:4 AU: Katz, E. J.;Zhang, Z.;Hughes, H. L.;Chung, K. -B.;Lucovsky, G.;Brillson, L. J.;
10:48:1 Controllable photoluminescent-magnetic dual-encoded wurtzite ZnS:Cu2+Mn2+ nanowires modulated by Cu2+ and Mn2+ ions
DOI:10.1016/j.jallcom.2013.05.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Yang, Jinghai;Wang, Bingji;Cao, Jian;Han, Donglai;Feng, Bo;Wei, Maobin;Fan, Lin;Kou, Chunlei;Liu, Qianyu;Wang, Tingting;
10:48:2 Hydrothermal synthesis of wurtzite Zn1-xNixS mesoporous nanospheres: With blue-green emissions and ferromagnetic Curie point above room temperature
DOI:10.1016/j.jallcom.2013.11.079 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Reddy, D. Amaranatha;Kim, D. H.;Rhee, S. J.;Jung, C. U.;Lee, B. W.;Liu, Chunli;
10:48:3 The structure and multifunctional behaviors of Mn-ZnO/Mn-ZnS nanocompo sites
DOI:10.1016/j.ceramint.2014.05.102 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Liu, Xiaofang;Chen, Xiaobo;Cui, Xinrui;Yu, Ronghai;
10:48:4 Structural, optical and magnetic properties of Zn0.97-xCuxCr0.03S nanoparticles
DOI:10.1016/j.apsusc.2012.01.123 JN:APPLIED SURFACE SCIENCE PY:2012
TC:17 AU: Reddy, D. Amaranatha;Murali, G.;Poornaprakash, B.;Vijayalakshmi, R. P.;Reddy, B. K.;
10:48:5 Magnetism and photoluminescence of Mn:ZnO/Mn:ZnS heterostructures
DOI:10.1016/j.matlet.2012.11.013 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Liu, X. F.;Yang, N.;Li, H.;Yu, R. H.;Wei, W.;
10:48:6 Room-temperature ferromagnetism in lightly Cr-doped ZnO nanoparticles
DOI:10.1007/s00339-010-5590-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:24 AU: Duan, L. B.;Zhao, X. R.;Liu, J. M.;Wang, T.;Rao, G. H.;
10:48:7 Room-temperature ferromagnetism in EDTA capped Cr-doped ZnS nanoparticles
DOI:10.1007/s00339-011-6563-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:22 AU: Reddy, D. Amaranatha;Murali, G.;Vijayalakshmi, R. P.;Reddy, B. K.;
10:48:8 Structural, optical and magnetic properties of Zn0.97-xAlxCr0.03S nanoparticles
DOI:10.1016/j.cerarnint.2013.07.006 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Reddy, D. Amaranatha;Liu, Chunli;Vijayalakshmi, R. P.;Reddy, B. K.;
10:48:9 Room temperature ferromagnetism in Ni doped ZnS nanoparticles
DOI:10.1016/j.jallcom.2012.12.001 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:15 AU: Kumar, Sanjeev;Chen, C. L.;Dong, C. L.;Ho, Y. K.;Lee, J. F.;Chan, T. S.;Thangavel, R.;Chen, T. K.;Mok, B. H.;Rao, S. M.;Wu, M. K.;
10:48:10 The effects of doping and shell thickness on the optical and magnetic properties of Mn/Cu/Fe-doped and Co-doped ZnS nanowires/ZnO quantum dots/SiO2 heterostructures
DOI:10.1063/1.4733948 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:16 AU: Cao, Jian;Yang, Jinghai;Yang, Lili;Wei, Maobin;Feng, Bo;Han, Donglai;Fan, Lin;Wang, Bingji;Fu, Hao;
10:48:11 First-principles study on the magnetism in ZnS-based diluted magnetic semiconductors
DOI:10.1016/j.jmmm.2010.04.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:27 AU: Xie, Jianming;
10:48:12 Effect of Mn co-doping on the structural, optical and magnetic properties of ZnS:Cr nanoparticles
DOI:10.1016/j.jallcom.2012.04.115 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:17 AU: Reddy, D. Amaranatha;Sambasivam, S.;Murali, G.;Poornaprakash, B.;Vijayalakshmi, R. P.;Aparna, Y.;Reddy, B. K.;Rao, J. L.;
10:48:13 Fe doping in ZnS for realizing nanocrystalline-diluted magnetic semiconductor phase
DOI:10.1007/s10853-014-8321-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:1 AU: Patel, Prayas Chandra;Srivastava, P. C.;
10:48:14 Room temperature ferromagnetism in Zn1-xCoxS thin films with wurtzite structure
DOI:10.1016/j.jmmm.2011.05.057 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:16 AU: Patel, Shiv P.;Pivin, J. C.;Chawla, A. K.;Chandra, Ramesh;Kanjilal, D.;Kumar, Lokendra;
10:48:15 Dopant induced RTFM and enhancement of fluorescence efficiencies in spintronic ZnS:Ni nanoparticles
DOI:10.1016/j.ceramint.2013.10.056 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Poornaprakash, B.;Sambasivam, S.;Reddy, D. Amaranatha;Murali, G.;Vijayalakshmi, R. P.;Reddy, B. K.;
10:48:16 Luminescence, structural and ferromagnetic properties of Zn1-xMnxSy films for different manganese contents
DOI:10.1016/j.jallcom.2012.12.142 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Ni, Wei-Shih;Lin, Yow-Jon;Liu, Chia-Jyi;Yang, Yao-Wei;Horng, Lance;
10:48:17 Composition dependent room temperature ferromagnetism and PL intensity of cobalt doped ZnS nanoparticles
DOI:10.1016/j.jallcom.2013.04.106 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Poornaprakash, B.;Reddy, D. Amaranatha;Murali, G.;Rao, N. Madhusudhana;Vijayalakshmi, R. P.;Reddy, B. K.;
10:48:18 Room-temperature ferromagnetism of the amorphous Cu-doped ZnO thin films
DOI:10.1016/j.apsusc.2009.10.096 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Qi, Jing;Gao, Daqiang;Zhang, Li;Yang, Yinghu;
10:48:19 Structural, optical and magnetic properties of Zn-1 (-) xCoxO prepared by the sol-gel route
DOI:10.1016/j.ceramint.2013.01.025 JN:CERAMICS INTERNATIONAL PY:2013
TC:11 AU: Srinet, Gunjan;Varshney, Prateek;Kumar, Ravindra;Sajal, Vivek;Kulriya, P. K.;Knobel, M.;Sharma, S. K.;
10:48:20 Study of composition dependent structural, optical, and magnetic properties of Cu-doped Zn1-xCdxS nanoparticles
DOI:10.1063/1.3524516 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Chawla, Amit Kumar;Singhal, Sonal;Nagar, Sandeep;Gupta, Hari Om;Chandra, Ramesh;
10:48:21 Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1-xCoxSy films
DOI:10.1063/1.4754423 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Ni, Wei-Shih;Lin, Yow-Jon;
10:48:22 Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations
DOI:10.1016/j.jmmm.2012.02.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:14 AU: Patel, Shiv P.;Pivin, J. C.;Patel, M. K.;Won, Jonghan;Chandra, Ramesh;Kanjilal, D.;Kumar, Lokendra;
10:48:23 Study of electrical properties of La3+/Mn4+-modified PbTiO3 nanoceramics
DOI:10.1007/s10853-012-6308-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:8 AU: Shukla, Archana;Choudhary, R. N. P.;
10:48:24 Optical properties of water-soluble Co2+:ZnS semiconductor nanocrystals synthesized by a hydrothermal process
DOI:10.1016/j.matlet.2011.08.025 JN:MATERIALS LETTERS PY:2012
TC:16 AU: Liu, Lingyun;Yang, Lin;Pu, Yunti;Xiao, Dingquan;Zhu, Jianguo;
10:48:25 Effect of Ni-doping concentration on structural, optical and magnetic properties of CdSe nanorods
DOI:10.1016/j.mssp.2014.03.032 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:7 AU: Singh, Jaspal;Kumar, Sanjeev;Verma, N. K.;
10:48:26 Shell-enhanced photoluminescence and ferromagnetism of Co:ZnS/Co:ZnO core-shell nanostructure
DOI:10.1016/j.materresbull.2013.09.048 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Liu, X. F.;Cui, X. R.;Chen, X. B.;Yang, N.;Yu, R. H.;
10:48:27 Room temperature ferromagnetism and cooling effect in dilute Co-doped ZnS nanoparticles with zinc blende structure
DOI:10.1016/j.jallcom.2013.08.215 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Fang, Wenjian;Liu, Yongsheng;Guo, Baozhi;Peng, Lin;Zhong, Yunbo;Zhang, Jincang;Zhao, Zhenjie;
10:48:28 Defects in Zn1-x-yCoxMgyO nanoparticles: Probed by XRD, RAMAN and PAS techniques
DOI:10.1016/j.mssp.2012.12.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Singh, V. P.;Singh, R. K.;Das, D.;Rath, Chandaha;
10:48:29 Photoluminescence and magnetic properties of Fe-doped ZnS nano-particles synthesized by chemical co-precipitation
DOI:10.1016/j.apsusc.2011.03.114 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Nie Eryong;Liu Donglai;Zhang Yunsen;Bai Xue;Yi Liang;Jin Yong;Jiao Zhifeng;Sun Xiaosong;
10:48:30 Room temperature ferromagnetism in MnxZn1-xS (x=0.00-0.07) nanoparticles
DOI:10.1016/j.jallcom.2012.07.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Ragam, M.;Kalaiselvan, G.;Arumugam, S.;Sankar, N.;Ramachandran, K.;
10:48:31 Observation of nonlinear absorption and visible photoluminescence emission in chemically synthesized Cu2+ doped ZnS nanoparticles
DOI:10.1063/1.3674307 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Kole, A. K.;Kumbhakar, P.;Chatterjee, U.;
10:48:32 Variation of half metallicity and magnetism of Cd(1-x)Cr(x)Z (Z = S, Se and Te) DMS compounds on reducing dilute limit
DOI:10.1016/j.jmmm.2012.10.044 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:16 AU: Saini, Hardev S.;Singh, Mukhtiyar;Reshak, Ali H.;Kashyap, Manish K.;
10:48:33 Room-Temperature Ferromagnetism in Cobalt and Aluminum Co-Doping Tin Dioxide Diluted Magnetic Semiconductors
DOI:10.2320/matertrans.M2009373 JN:MATERIALS TRANSACTIONS PY:2010
TC:5 AU: Ning, Xingzhi;Liu, XiaoFang;Yu, Ronghai;Shi, Ji;Nakamura, Yoshio;
10:48:34 Preparation of Cr-doped ZnS nanosheets with room temperature ferromagnetism via a solvothermal route
DOI:10.1016/j.jcrysgro.2013.02.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Zhang, Zhufeng;Li, Jin;Jian, Jikang;Wu, Rong;Sun, Yanfei;Wang, Shengfeng;Ren, Yinshuan;Li, Jiajie;
10:48:35 Reverse micelle-derived Cu-doped Zn1-xCdxS quantum dots and their core/shell structure
DOI:10.1016/j.jcis.2009.09.039 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:12 AU: Kim, Jong-Uk;Kim, Young Kwan;Yang, Heesun;
10:48:36 Correlations between microstructural and impedance properties of acceptor segregated nanosized lead titanate
DOI:10.1016/j.matlet.2012.06.047 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Shukla, Archana;
10:48:37 Inducing multiple functionalities in ZnS nanoparticles by doping Ni+2 ions
DOI:10.1016/j.materresbull.2013.02.011 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:7 AU: Dixit, Namrata;Anasane, Nishant;Chavda, Mukesh;Bodas, Dhananjay;Soni, Hemant P.;
10:48:38 Investigation of the properties of ferromagnetic ZnO:Cr2O3 nanocomposites
DOI:10.1016/j.mssp.2011.09.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Jacob, Sanith;Santhoskumar, A. U.;Bhuvana, K. P.;Palanivelu, K.;Nayak, S. K.;
10:49:1 Electrical properties of Li-doped NiO films
DOI:10.1016/j.jeurceramsoc.2009.05.041 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:52 AU: Jang, Wei-Luen;Lu, Yang-Ming;Hwang, Weng-Sing;Chen, Wei-Chien;
10:49:2 Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in heteroepitaxial p-n junctions
DOI:10.1063/1.3499276 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:28 AU: Dutta, Titas;Gupta, P.;Gupta, A.;Narayan, J.;
10:49:3 Li-doped NiMgO thin films as a promising p-type transparent conductive material with wide band-gap
DOI:10.1016/j.matlet.2013.07.128 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Cao, Ling;Li, Xuyan;Wang, Dongxiao;Zhu, Liping;
10:49:4 Correlation of ZnO orientation to band alignment in p-Mg0.2Ni0.8O/n-ZnO interfaces
DOI:10.1063/1.4824802 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Zhou, T. T.;Lu, B.;Wu, C. J.;Ye, Z. Z.;Lu, J. G.;Pan, X. H.;
10:49:5 High conductivity nickel oxide thin films by a facile sol-gel method
DOI:10.1016/j.matlet.2012.10.109 JN:MATERIALS LETTERS PY:2013
TC:20 AU: Guo, Wen;Hui, K. N.;Hui, K. S.;
10:49:6 Band engineering of Ni1-xMgxO alloys for photocathodes of high efficiency dye-sensitized solar cells
DOI:10.1063/1.4769210 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Deng, Junkai;Mortazavi, Majid;Medhekar, N. V.;Liu, Jefferson Zhe;
10:49:7 Deep-ultraviolet photodetectors from epitaxially grown NixMg1-xO
DOI:10.1063/1.3503634 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Mares, J. W.;Boutwell, R. C.;Wei, M.;Scheurer, A.;Schoenfeld, W. V.;
10:49:8 Valence Band-Edge Engineering of Nickel Oxide Nanoparticles via Cobalt Doping for Application in p-Type Dye-Sensitized Solar Cells
DOI:10.1021/am301565j JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:16 AU: Natu, Gayatri;Hasin, Panitat;Huang, Zhongjie;Ji, Zhiqiang;He, Mingfu;Wu, Yiying;
10:49:9 Preparation and properties of p-type transparent conductive Cu-doped NiO films
DOI:10.1016/j.tsf.2011.01.058 JN:THIN SOLID FILMS PY:2011
TC:22 AU: Chen, S. C.;Kuo, T. Y.;Lin, Y. C.;Lin, H. C.;
10:49:10 Experimental determination of band offsets of NiO-based thin film heterojunctions
DOI:10.1063/1.4900737 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Kawade, Daisuke;Chichibu, Shigefusa F.;Sugiyama, Mutsumi;
10:49:11 Modulation of Ni valence in p-type NiO films via substitution of Ni by Cu
DOI:10.1116/1.4774209 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:2 AU: Chen, Wei-Yu;Jeng, Jiann-Shing;Huang, Kuo-Lun;Chen, Jen-Sue;
10:49:12 Effect of cobalt doping on microstructural and optical properties of nickel oxide thin films
DOI:10.1016/j.mssp.2014.02.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Sharma, Ratnesh;Acharya, A. D.;Moghe, Shweta;Shrivastava, S. B.;Gangrade, Mohan;Shripathi, T.;Ganesan, V.;
10:49:13 Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition
DOI:10.1016/j.tsf.2010.12.009 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Yang, Ming;Shi, Zhan;Feng, Jiahan;Pu, Haifeng;Li, Guifeng;Zhou, Jun;Zhang, Qun;
10:49:14 Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method
DOI:10.1116/1.4804172 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:2 AU: Kwon, Yong Hun;Chun, Sung Hyun;Cho, Hyung Koun;
10:49:15 Preparation and band-gap modulation in MgxNi1-xO thin films as a function of Mg contents
DOI:10.1016/j.tsf.2011.01.082 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Yang, Zhi-Guo;Zhu, Li-Ping;Guo, Yan-Min;Ye, Zhi-Zhen;Zhao, Bing-Hui;
10:49:16 Hydrogen sensors fabricated with sprayed NiO, NiO:Li and NiO:Li,Pt thin films
DOI:10.1016/j.ijhydene.2013.01.122 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:4 AU: Garduno-Wilches, I.;Alonso, J. C.;
10:49:17 Structural, electrical, and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2014.10.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Roffi, Teuku Muhammad;Uchida, Kazuo;Nozaki, Shinji;
10:49:18 Investigations on Sn-doped Ni oxide thin films and their use as optical sensor devices
DOI:10.1016/j.jnoncrysol.2011.09.028 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Dakhel, A. A.;
10:49:19 Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition
DOI:10.1016/j.tsf.2012.05.005 JN:THIN SOLID FILMS PY:2012
TC:15 AU: Yang, Ming;Pu, Haifeng;Zhou, Qianfei;Zhang, Qun;
10:49:20 Optical and structural properties of NiMgO thin films formed by sol-gel spin coating
DOI:10.1016/j.tsf.2012.02.065 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Boutwell, R. C.;Wei, M.;Scheurer, A.;Mares, J. W.;Schoenfeld, W. V.;
10:49:21 Structural, electrical and optical properties of molybdenum-doped TiO2 thin films
DOI:10.1016/j.ceramint.2012.10.197 JN:CERAMICS INTERNATIONAL PY:2013
TC:7 AU: Houng, Boen;Liu, Cheng Chiu;Hung, Min Tai;
10:49:22 Effect of Substrate Temperature on Structural, Optical and Electrical Properties of Sputtered NiO-Ag Nanocrystalline Thin Films
DOI:10.1007/s13391-014-3351-z JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Reddy, Y. Ashok Kumar;Ajitha, B.;Reddy, P. Sreedhara;Reddy, M. Siva Pratap;Lee, Jung-Hee;
10:49:23 Optical and electrical properties of lithium doped nickel oxide films deposited by spray pyrolysis onto alumina substrates
DOI:10.1016/j.jcrysgro.2010.08.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Garduno, I. A.;Alonso, J. C.;Bizarro, M.;Ortega, R.;Rodriguez-Fernandez, L.;Ortiz, A.;
10:49:24 Improvement of electric properties in transparent p-Li0.07Ni0.93O(111)/n-ZnO(11(2)over-bar0) heterojunction with Mg1-xZnxO intermediate layer
DOI:10.1016/j.matlet.2013.09.112 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Zhou, Tingting;Lu, Bin;Ye, Yinghui;Pan, Xinhua;Lu, Jianguo;Ye, Zhizhen;
10:49:25 Effect of palladium content on microstructures, electrical and optical properties of NiO films by rf sputtering
DOI:10.1016/j.tsf.2013.07.017 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Chen, S. C.;Kuo, T. Y.;Lin, Y. C.;Hsu, S. W.;Lin, H. C.;
10:49:26 Controllable band-gap engineering of the ternary MgxNi1-xO thin films deposited by radio frequency magnetron sputtering for deep ultra-violet optical devices
DOI:10.1016/j.tsf.2012.06.021 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Kwon, Yong Hun;Chun, Sung Hyun;Cho, Hyung Koun;
10:49:27 Enhanced performance of NiMgO-based ultraviolet photodetector by rapid thermal annealing
DOI:10.1016/j.tsf.2014.02.072 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Guo, Yanmin;Zhu, Liping;Jiang, Jie;Li, Yaguang;Hu, Liang;Xu, Hongbin;Ye, Zhizhen;
10:49:28 Valence band offset of n-ZnO/p-MgxNi1-xO heterojunction measured by x-ray photoelectron spectroscopy
DOI:10.1063/1.4742172 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Guo, Y. M.;Zhu, L. P.;Jiang, J.;Hu, L.;Ye, C. L.;Ye, Z. Z.;
10:49:29 Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition
DOI:10.1016/j.apsusc.2012.04.057 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Huang, Yanwei;Zhang, Qun;Xi, Junhua;Ji, Zhenguo;
10:49:30 Investigation of the properties of In doped NiO films
DOI:10.1016/j.apsusc.2014.02.141 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Kerli, S.;Alver, U.;Yaykasli, H.;
10:49:31 Effect of oxygen partial pressure on the properties of NiO-Ag composite films grown by DC reactive magnetron sputtering
DOI:10.1016/j.jallcom.2013.08.180 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Reddy, Y. Ashok Kumar;Reddy, A. Sivasankar;Reddy, P. Sreedhara;
10:49:32 Exchange bias and training effect in Ni/Ag-doped NiO bilayers
DOI:10.1016/j.jmmm.2009.10.012 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:8 AU: Yang, P. Y.;Zeng, F.;Pan, F.;
10:49:33 Postdeposition annealing of NiOx thin films: A transition from n-type to p-type conductivity for short wave length optoelectronic devices
DOI:10.1557/jmr.2012.443 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Tyagi, Manisha;Tomar, Monika;Gupta, Vinay;
10:49:34 Structural, optical, and electrical properties of NiO-In composite films deposited by radio frequency cosputtering
DOI:10.1116/1.4865808 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Chen, Sheng-Chi;Kuo, Tsung-Yen;Lin, Hsin-Chih;Wen, Chao-Kuang;Lin, Yu-Chin;Chen, Cong-Da;
10:49:35 Effect of copper doping on the change in the optical absorption behaviour in NiO thin films
DOI:10.1016/j.renene.2012.02.028 JN:RENEWABLE ENERGY PY:2012
TC:13 AU: Moghe, Shweta;Acharya, A. D.;Panda, Richa;Shrivastava, S. B.;Gangrade, Mohan;Shripathi, T.;Ganesan, V.;
10:49:36 Electrochemical Determination of the Density of States of Nanostructured NiO Films
DOI:10.1021/am502827z JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Peiris, T. A. Nirmal;Sagu, Jagdeep S.;Wijayantha, K. G. Upul;Garcia-Canadas, Jorge;
10:49:37 Lattice spacings and domain sizes of room-temperature epitaxial LixNi1-xO (0 <= x <= 0.48) thin films grown on ultra-smooth sapphire substrates
DOI:10.1016/j.apsusc.2014.09.154 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Yang, Anli;Sakata, Osami;Yamauchi, Ryosuke;Katsuya, Yoshio;Kumara, L. S. R.;Shimada, Yoshitomo;Matsuda, Akifumi;Yoshimoto, Mamoru;
10:49:38 Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO Thin Films
DOI:10.1007/s11664-012-2213-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Chen, Xinman;Zhao, Lingzhi;Niu, Qiaoli;
10:49:39 Nickel oxide coated carbon nanoparticles as temperature sensing materials
DOI:10.1016/j.matchemphys.2014.07.048 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Huang, Chun-Chih;Su, Pei-Chen;Hsiao, Hao-Ming;Liao, Ying-Chih;
10:49:40 Conductive lithium nickel oxide thin film patterns via inkjet printing technology
DOI:10.1016/j.tsf.2013.02.101 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Huang, Chun-Chih;Su, Pei-Chen;Liao, Ying-Chih;
10:49:41 Characterization and properties of NiO films produced by rf magnetron sputtering with oxygen ion source assistance
DOI:10.1016/j.tsf.2014.07.062 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Chen, S. C.;We, C. K.;Kuo, T. Y.;Peng, W. C.;Lin, H. C.;
10:49:42 Functional properties of nickel cobalt oxide thin films
DOI:10.1016/j.tsf.2011.08.067 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Iacomi, F.;Calin, G.;Scarlat, C.;Irimia, M.;Doroftei, C.;Dobromir, M.;Rusu, G. G.;Iftimie, N.;Sandu, A. V.;
10:49:43 Effect of hot-filament annealing in a hydrogen atmosphere on the electrical and structural properties of Nb-doped TiO2 sputtered thin films
DOI:10.1016/j.tsf.2011.10.031 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Tavares, C. J.;Castro, M. V.;Marins, E. S.;Samantilleke, A. P.;Ferdov, S.;Rebouta, L.;Benelmekki, M.;Cerqueira, M. F.;Alpuim, P.;Xuriguera, E.;Riviere, J-P;Eyidi, D.;Beaufort, M-F;Mendes, A.;
10:49:44 Structural, optical and electrical properties of undoped and Li-doped NiO thin films prepared by sol-gel spin coating method
DOI:10.1016/j.tsf.2013.10.137 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Sta, I.;Jlassi, M.;Hajji, M.;Ezzaouia, H.;
10:50:1 Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls
DOI:10.1002/adfm.200901884 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:550 AU: Zeng, Haibo;Duan, Guotao;Li, Yue;Yang, Shikuan;Xu, Xiaoxia;Cai, Weiping;
10:50:2 A facile method for preparation ZnO with different morphology and their optical property
DOI:10.1016/j.jallcom.2013.06.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Zhou, Keqing;Zhang, Qiangjun;Shi, Yongqian;Jiang, Saihua;Hu, Yuan;Gui, Zhou;
10:50:3 Identification of visible emission from ZnO quantum dots: Excitation-dependence and size-dependence
DOI:10.1063/1.4705395 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Xu, Xiaoyong;Xu, Chunxiang;Shi, Zengliang;Yang, Chi;Yu, Bin;Hu, Jingguo;
10:50:4 Luminescence Properties of Cobalt-Doped ZnO Films Prepared by Sol-Gel Method
DOI:10.1007/s11664-013-2719-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:6 AU: Xu, Jianping;Shi, Shaobo;Li, Lan;Zhang, Xiaosong;Wang, Youwei;Shi, Qingliang;Li, Shubin;Wang, Hao;
10:50:5 High aspect ratio beta-MnO2 nanowires and sensor performance for explosive gases
DOI:10.1063/1.4819218 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Xiao, J.;Liu, P.;Liang, Y.;Li, H. B.;Yang, G. W.;
10:50:6 Supersaturation of aqueous species and hydrothermal crystal growth of ZnO
DOI:10.1016/j.jcrysgro.2015.02.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Gelabert, M. C.;
10:50:7 Gelatin-assisted hydrothermal synthesis of single crystalline zinc oxide nanostars and their photocatalytic properties
DOI:10.1016/j.jcis.2013.03.001 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:10 AU: Fang, Ke-Ming;Wang, Zhen-Zhen;Zhang, Ming;Wang, Ai-Jun;Meng, Zi-Yan;Feng, Jiu-Ju;
10:50:8 Zinc oxide synthesis via a microemulsion technique: morphology control with application to dye-sensitized solar cells
DOI:10.1039/c1jm15227k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:16 AU: Lin, Jen-Chieh;Lee, Chuan-Pei;Ho, Kuo-Chuan;
10:50:9 Synthesis and characterization of ZnO nanostructures using modified chemical bath deposition method
DOI:10.1016/j.matlet.2014.09.055 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Kale, Rohidas B.;Lu, Shih-Yuan;
10:50:10 Room-temperature blue-violet laser emission from individual ultra-long ZnO microbelts
DOI:10.1016/j.matlet.2014.01.086 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Zhang, Ning;Yu, Ke;Li, Qiong;Song, Changqing;Zhu, Lei;Zhu, Ziqiang;
10:50:11 Role of the surface polarity in governing the luminescence properties of ZnO nanoparticles synthesized by Sol-gel route
DOI:10.1016/j.apsusc.2013.01.215 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Sharma, A.;Dhar, S.;Singh, B. P.;
10:50:12 Hydrothermal growth and characterizations of dandelion-like ZnO nanostructures
DOI:10.1016/j.jallcom.2013.05.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Kale, Rohidas B.;Lu, Shih-Yuan;
10:50:13 Phosphorescent hybrid organic-inorganic light-emitting systems employing ZnO nanorods as a sensitizer
DOI:10.1016/j.materresbull.2014.06.014 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Park, Jun Kue;Jeon, Gi Wan;Lee, Kyu Won;Choi, E. H.;Lee, Cheol Eui;
10:50:14 Highly efficient white quantum dot light-emitting diode based on ZnO quantum dot
DOI:10.1007/s00339-014-8707-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Chen, Jing;Pan, Jiangyong;Du Qingguo;Alagappan, G.;Wei Lei;Qing Li;Jun Xia;
10:50:15 Temperature Effect on the Microstructures and Optical Properties of ZnO Nanowires
DOI:10.1155/2012/172312 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Chen, Yanglong;Wang, Xianying;Xie, Shufan;Liu, Jian;Cheng, Hongbin;Zheng, Xuejun;Liu, Fang;Yang, Junhe;
10:50:16 Light-assisted electrochemical construction of (111)Cu2O/(0001)ZnO heterojunction
DOI:10.1016/j.tsf.2011.09.022 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Fariza, Binti Mohamad;Sasano, Junji;Shinagawa, Tsutomu;Watase, Seiji;Izaki, Masanobu;
10:50:17 Magnetic behavior of Co-Mn co-doped ZnO nanoparticles
DOI:10.1016/j.jmmm.2014.07.006 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:3 AU: Li, Hengda;Liu, Xinzhong;Zheng, Zhigong;
10:50:18 Optical properties of petal-like aggregated nanocrystalline zinc oxide synthesized by laser ablation
DOI:10.1016/j.materresbull.2011.12.038 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:2 AU: Jafarkhani, P.;Chehrghani, A.;Torkamany, M. J.;
10:51:1 Room-temperature ferromagnetism via unpaired dopant electrons and p-p coupling in carbon-doped In2O3: Experiment and theory
DOI:10.1103/PhysRevB.86.115212 JN:PHYSICAL REVIEW B PY:2012
TC:9 AU: Green, R. J.;Boukhvalov, D. W.;Kurmaev, E. Z.;Finkelstein, L. D.;Ho, H. W.;Ruan, K. B.;Wang, L.;Moewes, A.;
10:51:2 Donor-band ferromagnetism in cobalt-doped indium oxide
DOI:10.1103/PhysRevB.84.085201 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Hakimi, A. M. H. R.;Blamire, M. G.;Heald, S. M.;Alshammari, Marzook S.;Alqahtani, M. S.;Score, D. S.;Blythe, H. J.;Fox, A. M.;Gehring, G. A.;
10:51:3 A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3
DOI:10.1016/j.apsusc.2010.07.106 JN:APPLIED SURFACE SCIENCE PY:2010
TC:21 AU: Singhal, R. K.;Samariya, A.;Kumar, Sudhish;Sharma, S. C.;Xing, Y. T.;Deshpande, U. P.;Shripathi, T.;Saitovitch, E.;
10:51:4 Room temperature ferromagnetism in transparent Fe-doped In2O3 films
DOI:10.1063/1.3678038 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Kim, H.;Osofsky, M.;Miller, M. M.;Qadri, S. B.;Auyeung, R. C. Y.;Pique, A.;
10:51:5 Nanocasting of Mesoporous In-TM (TM = Co, Fe, Mn) Oxides: Towards 3D Diluted-Oxide Magnetic Semiconductor Architectures
DOI:10.1002/adfm.201201486 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:9 AU: Pellicer, Eva;Cabo, Moises;Rossinyol, Emma;Solsona, Pau;Surinach, Santiago;Dolors Baro, Maria;Sort, Jordi;
10:51:6 Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films
DOI:10.1063/1.3303986 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Jiang, Feng-Xian;Xu, Xiao-Hong;Zhang, Jun;Fan, Xiao-Chen;Wu, Hai-Shun;Gehring, G. A.;
10:51:7 Local Mn structure and room temperature ferromagnetism in Mn-doped In2O3 films
DOI:10.1063/1.4808116 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: An, Yukai;Wang, Shiqi;Duan, Lingshen;Liu, Jiwen;Wu, Zhonghua;
10:51:8 Room temperature ferromagnetism in metallic and insulating (In1-xFex)(2)O-3 thin films
DOI:10.1063/1.3559298 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:23 AU: Jiang, Feng-Xian;Xu, Xiao-Hong;Zhang, Jun;Fan, Xiao-Chen;Wu, Hai-Shun;Alshammari, Marzook;Feng, Qi;Blythe, Harry J.;Score, David S.;Addison, Kiri;Al-Qahtani, Mohammed;Gehring, Gillian A.;
10:51:9 Effects of oxygen vacancy and local spin on the ferromagnetic properties of Ni-doped In2O3 powders
DOI:10.1016/j.matchemphys.2011.12.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:9 AU: Ma, Rong-Rong;Jiang, Feng-Xian;Qin, Xiu-Fang;Xu, Xiao-Hong;
10:51:10 The local structure, magnetic, and transport properties of Cr-doped In2O3 films
DOI:10.1063/1.4800828 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Wang, Shiqi;An, Yukai;Feng, Deqiang;Wu, Zhonghua;Liu, Jiwen;
10:51:11 Correlation between oxygen vacancies and magnetism in Fe-doped In2O3 films
DOI:10.1016/j.apsusc.2013.03.129 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: An, Yukai;Wang, Shiqi;Feng, Deqiang;Wu, Zhonghua;Liu, Jiwen;
10:51:12 Effect of Mn doping on the structural, optical, and magnetic properties of In2O3 films
DOI:10.1116/1.4824163 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:2 AU: Wang, Shiqi;An, Yukai;Duan, Lingshen;Liu, Huarui;Liu, Jiwen;Wu, Zhonghua;
10:51:13 Structural, optical and magnetic properties of (In1-xNix)(2)O-3 (0 <= x <= 0.09) powders synthesized by solid state reaction
DOI:10.1016/j.mssp.2013.10.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Krishna, N. Sai;Kaleemulla, S.;Amarendra, G.;Rao, N. Madhusudhana;Kuppan, M.;Begam, M. Rigana;Reddy, D. Sreekantha;
10:51:14 Three-Dimensional Spatial Distribution of Cr atoms in Doped Indium Oxide
DOI:10.1021/cm103439e JN:CHEMISTRY OF MATERIALS PY:2011
TC:15 AU: Payne, David J.;Marquis, Emmanuelle A.;
10:51:15 Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films
DOI:10.1016/j.jallcom.2014.05.176 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Myagkov, V. G.;Tambasov, I. A.;Bayukov, O. A.;Zhigalov, V. S.;Bykova, L. E.;Mikhlin, Yu. L.;Volochaev, M. N.;Bondarenko, G. N.;
10:51:16 Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor
DOI:10.1063/1.4865102 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Yan, Shiming;Qiao, Wen;Zhong, Wei;Au, Chak-Tong;Dou, Youwei;
10:51:17 Ferromagnetism in Tb doped ZnO nanocrystalline films
DOI:10.1063/1.4720381 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Zou, W. Q.;Ge, C. N.;Venkataiah, G.;Su, H. L.;Hsu, H. S.;Huang, J. C. A.;Liu, X. C.;Zhang, F. M.;Du, Y. W.;
10:51:18 Control of ferromagnetism in Fe-doped In2O3 by carbothermal annealing
DOI:10.1016/j.jmmm.2010.09.010 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:12 AU: Yan, Shiming;Ge, Shihui;Qiao, Wen;Zuo, Yalu;Xu, Feng;Xi, Li;
10:51:19 Impurity-vacancy complexes and ferromagnetism in doped sesquioxides
DOI:10.1103/PhysRevB.89.134423 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Alippi, Paola;Cesaria, Maura;Fiorentini, Vincenzo;
10:51:20 Room temperature ferromagnetism studies in Fe ion implanted indium oxide films
DOI:10.1016/j.mssp.2014.07.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Wang, J. W.;Shi, Y.;
10:51:21 Ferromagnetism in Cr doped In2O3
DOI:10.1016/j.tsf.2013.01.040 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Yi, J. B.;Bao, N. N.;Luo, X.;Fan, H. M.;Liu, T.;Li, S.;
10:51:22 Origin of magnetism in cobalt-doped indium tin oxide thin films
DOI:10.1103/PhysRevB.82.144429 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Hakimi, A. M. H. R.;Schoofs, F.;Bali, R.;Stelmashenko, N. A.;Blamire, M. G.;Langridge, S.;Cavill, S. A.;van der Laan, G.;Dhesi, S. S.;
10:51:23 Local structure of Fe-doped In2O3 films investigated by X-ray absorption fine structure spectroscopy
DOI:10.1007/s00339-013-7868-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: An, Yukai;Wang, Shiqi;Feng, Deqiang;Wu, Zhonghua;Liu, Jiwen;
10:51:24 Origin of ferromagnetism enhancement in bi-layer chromium-doped indium zinc oxides
DOI:10.1063/1.4745845 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Hsu, C. Y.;
10:51:25 Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films
DOI:10.1063/1.4722928 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Park, Chang-Yup;You, Chun-Yeol;Jeon, Kun-Rok;Shin, Sung-Chul;
10:51:26 Effect of Ni doping on the structure and properties of In2O3 nanocrystals prepared under magnetic field
DOI:10.1016/j.ceramint.2014.01.126 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Tong, Hui;Chu, Dewei;Zuo, Kaihui;Zeng, Yu-Ping;Enomoto, Naoya;Inada, Miki;Tanaka, Yumi;Hojo, Junichi;
10:51:27 Fluorine doping inducing high temperature ferromagnetism in (In1-xFex)(2)O-3
DOI:10.1016/j.jallcom.2012.10.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Yan, Shiming;Liu, Kun;Lv, Gang;Fan, Zhiqing;
10:51:28 Magneto-optic studies of magnetic oxides
DOI:10.1016/j.jmmm.2012.02.057 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:5 AU: Gehring, Gillian A.;Alshammari, Marzook S.;Score, David S.;Neal, James R.;Mokhtari, Abbas;Fox, A. Mark;
10:51:29 The role of Cu codoping on the Fe metal clustering and ferromagnetism in Fe-doped In2O3 films
DOI:10.1016/j.materresbull.2013.04.066 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Jiang, Feng-Xian;Feng, Qi;Quan, Zhi-Yong;Ma, Rong-Rong;Heald, S. M.;Gehring, G. A.;Xu, Xiao-Hong;
10:51:30 The electrical and optical properties of Cu-doped In2O3 thin films
DOI:10.1016/j.tsf.2014.01.006 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Ye, Fan;Cai, Xing-Min;Zhong, Xue;Tian, Xiao-Qing;Jing, Shou-Yong;Huang, Long-Biao;Roy, V. A. L.;Zhang, Dong-Ping;Fan, Ping;Luo, Jing-Tin;Zheng, Zhuang-Hao;Liang, Guang-Xing;
10:51:31 Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films
DOI:10.1063/1.3700864 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Kim, H.;Osofsky, M.;Auyeung, R. C. Y.;Pique, A.;
10:51:32 Contrasting behavior of the structural and magnetic properties in Mn- and Fe-doped In2O3 films
DOI:10.1063/1.4818169 JN:APL MATERIALS PY:2013
TC:4 AU: Feng, Qi;Blythe, Harry J.;Jiang, Feng-Xian;Xu, Xiao-Hong;Heald, Steve M.;Fox, A. Mark;Gehring, Gillian A.;
10:51:33 Roles of oxygen vacancy on ferromagnetism in Ni doped In2O3: A hybrid functional study
DOI:10.1016/j.jmmm.2013.08.001 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:2 AU: Wang, V.;You, C. -Y.;He, H. -P.;Ma, D. -M.;Mizuseki, H.;Kawazoe, Y.;
10:51:34 Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions
DOI:10.1063/1.3339882 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Hakimi, A. M. H. R.;Banerjee, N.;Aziz, A.;Robinson, J. W. A.;Blamire, M. G.;
10:51:35 Fabrication of Fe/Al2O3 composite foam via combination of combustion synthesis and spark plasma sintering techniques
DOI:10.1016/j.jallcom.2011.09.070 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Babakhani, A.;Zahabi, E.;Mehrabani, H. Yavari;
10:51:36 The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films
DOI:10.1016/j.jmmm.2011.06.032 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:3 AU: Khan, R. A.;Bhatti, A. S.;Ruan Kaibin;
10:51:37 Influence of Mn concentration on the electronic and magnetic properties of Mn doped beta-Ge3N4: A first-principles study
DOI:10.1016/j.jmmm.2012.04.021 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:1 AU: Wang, V.;He, H. P.;Zhang, S. L.;Ma, N.;Xiao, W.;Zhang, E. H.;Dou, H. Q.;
10:52:1 Universal conductance fluctuations in indium tin oxide nanowires
DOI:10.1103/PhysRevB.85.085423 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Yang, Ping-Yu;Wang, L. Y.;Hsu, Yao-Wen;Lin, Juhn-Jong;
10:52:2 Electrical conduction processes in ZnO in a wide temperature range 20-500 K
DOI:10.1063/1.3638120 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:23 AU: Lien, Chien-Chi;Wu, Chih-Yuan;Li, Zhi-Qing;Lin, Juhn-Jong;
10:52:3 Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films
DOI:10.1103/PhysRevB.85.104204 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Wu, Chih-Yuan;Lin, Bo-Tsung;Zhang, Yu-Jie;Li, Zhi-Qing;Lin, Juhn-Jong;
10:52:4 Quantum-interference transport through surface layers of indium-doped ZnO nanowires
DOI:10.1088/0957-4484/24/24/245203 JN:NANOTECHNOLOGY PY:2013
TC:2 AU: Chiu, Shao-Pin;Lu, Jia Grace;Lin, Juhn-Jong;
10:52:5 Structure and characteristics of ultrathin indium tin oxide films
DOI:10.1063/1.3536531 JN:APPLIED PHYSICS LETTERS PY:2011
TC:21 AU: Guo, Er-Jia;Guo, Haizhong;Lu, Huibin;Jin, Kuijuan;He, Meng;Yang, Guozhen;
10:52:6 Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films
DOI:10.1063/1.3357376 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:20 AU: Huang, Yung-Lung;Chiu, Shao-Pin;Zhu, Zhi-Xin;Li, Zhi-Qing;Lin, Juhn-Jong;
10:52:7 Low-temperature hopping and absence of spin-dependent transport in single crystals of cobalt-doped ZnO
DOI:10.1103/PhysRevB.82.125211 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Sharma, N.;Granville, S.;Kashyap, S. C.;Ansermet, J. -Ph.;
10:52:8 Logarithmic temperature dependence of Hall transport in granular metals
DOI:10.1103/PhysRevB.84.052202 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Zhang, Yu-Jie;Li, Zhi-Qing;Lin, Juhn-Jong;
10:52:9 Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires
DOI:10.1103/PhysRevB.82.195429 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Hsu, Yao-Wen;Chiu, Shao-Pin;Lien, An-Shao;Lin, Juhn-Jong;
10:52:10 Influence of Coulomb interaction on the electrical transport properties of ultrathin Al:ZnO films
DOI:10.1063/1.4730947 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Yang, Yang;Zhang, Yu-Jie;Liu, Xin-Dian;Li, Zhi-Qing;
10:52:11 Photoresponse in arrays of thermoelectric nanowire junctions
DOI:10.1063/1.4816621 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Huber, T. E.;Scott, R.;Johnson, S.;Brower, T.;Belk, J. H.;Hunt, J. H.;
10:52:12 Quantum coherence at low temperatures in mesoscopic systems: Effect of disorder
DOI:10.1103/PhysRevB.81.245306 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Niimi, Yasuhiro;Baines, Yannick;Capron, Thibaut;Mailly, Dominique;Lo, Fang-Yuh;Wieck, Andreas D.;Meunier, Tristan;Saminadayar, Laurent;Baeuerle, Christopher;
10:52:13 Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation
DOI:10.1021/nl2034656 JN:NANO LETTERS PY:2012
TC:12 AU: Zeng, Y. J.;Pereira, L. M. C.;Menghini, M.;Temst, K.;Vantomme, A.;Locquet, J. -P.;Van Haesendonck, C.;
10:52:14 Direct Observation of Electron Dephasing due to Inelastic Scattering from Defects in Weakly Disordered AuPd Wires
DOI:10.1103/PhysRevLett.104.206803 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:15 AU: Zhong, Yuan-Liang;Sergeev, Andrei;Chen, Chii-Dong;Lin, Juhn-Jong;
10:52:15 Mobility and carrier density in nanoporous indium tin oxide films
DOI:10.1103/PhysRevB.83.212201 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Gondorf, A.;Geller, M.;Weissbon, J.;Lorke, A.;Inhester, M.;Prodi-Schwab, A.;Adam, D.;
10:52:16 Electrical conduction mechanisms in natively doped ZnO nanowires (II)
DOI:10.1088/0957-4484/21/14/145202 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Tsai, Lin-Tzung;Chiu, Shao-Pin;Lu, Jia Grace;Lin, Juhn-Jong;
10:52:17 Origin of negative magnetoresistance in polycrystalline SnO2 films
DOI:10.1103/PhysRevB.83.165309 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Dauzhenka, T. A.;Ksenevich, V. K.;Bashmakov, I. A.;Galibert, J.;
10:52:18 Free-electronlike diffusive thermopower of indium tin oxide thin films
DOI:10.1063/1.3524522 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Wu, Chih-Yuan;Tra Vu Thanh;Chen, Yi-Fu;Lee, Jui-Kan;Lin, Juhn-Jong;
10:52:19 Conductivity and tunneling density of states in granular Cr films
DOI:10.1103/PhysRevB.82.054203 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Sun, Yu-Chen;Yeh, Sheng-Shiuan;Lin, Juhn-Jong;
10:52:20 Anisotropic magnetoconductance of a InAs nanowire: Angle-dependent suppression of one-dimensional weak localization
DOI:10.1103/PhysRevB.81.153304 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Liang, Dong;Du, Juan;Gao, Xuan P. A.;
10:52:21 Electrical transport properties of Al-doped ZnO films
DOI:10.1016/j.apsusc.2012.09.089 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Liu, Xin Dian;Liu, Jing;Chen, Si;Li, Zhi Qing;
10:52:22 Anomalous Hall effects in Co2FeSi Heusler compound films and Co2FeSi-Al2O3 granular films
DOI:10.1063/1.4707846 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Qin, Zhu;Liu, Xin-Dian;Li, Zhi-Qing;
10:52:23 Metal-insulator transitions in IZO, IGZO, and ITZO films
DOI:10.1063/1.4897501 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Makise, Kazumasa;Hidaka, Kazuya;Ezaki, Syohei;Asano, Takayuki;Shinozaki, Bunju;Tomai, Shigekazu;Yano, Koki;Nakamura, Hiroaki;
10:52:24 Electron transport and defect structure in highly conducting reactively sputtered ultrathin tin oxide films
DOI:10.1063/1.4866869 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bansal, Shikha;Pandya, Dinesh K.;Kashyap, Subhash C.;
10:52:25 Relaxor Ferroelectricity and Magnetoelectric Coupling in ZnO-Co Nanocomposite Thin Films: Beyond Multiferroic Composites
DOI:10.1021/am4053877 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Li, D. Y.;Zeng, Y. J.;Batuk, D.;Pereira, L. M. C.;Ye, Z. Z.;Fleischmann, C.;Menghini, M.;Nikitenko, S.;Hadermann, J.;Temst, K.;Vantomme, A.;Van Bael, M. J.;Locquet, J. -P.;Van Haesendonck, C.;
10:52:26 Giant Hall effect in nonmagnetic Mo/SnO2 granular films
DOI:10.1103/PhysRevB.82.092202 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Wu, Ya-Nan;Li, Zhi-Qing;Lin, Juhn-Jong;
10:52:27 Temporal universal conductance fluctuations in RuO2 nanowires due to mobile defects
DOI:10.1103/PhysRevB.84.155432 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Lien, An-Shao;Wang, L. Y.;Chu, C. S.;Lin, Juhn-Jong;
10:52:28 Theoretical, numerical, and experimental study of a flying qubit electronic interferometer
DOI:10.1103/PhysRevB.89.125432 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Bautze, Tobias;Suessmeier, Christoph;Takada, Shintaro;Groth, Christoph;Meunier, Tristan;Yamamoto, Michihisa;Tarucha, Seigo;Waintal, Xavier;Baeuerle, Christopher;
10:52:29 1/f noise in micrometer-sized ultrathin indium tin oxide films
DOI:10.1063/1.4821938 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Yeh, Sheng-Shiuan;Hsu, Wei-Ming;Lee, Jui-Kan;Lee, Yao-Jen;Lin, Juhn-Jong;
10:52:30 Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)
DOI:10.1063/1.4820770 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Lee, Y. F.;Wu, F.;Kumar, R.;Hunte, F.;Schwartz, J.;Narayan, J.;
10:52:31 Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films
DOI:10.1063/1.4891855 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lang, Wen-Jing;Li, Zhi-Qing;
10:52:32 Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films
DOI:10.1063/1.4815877 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Li, D. Y.;Zeng, Y. J.;Pereira, L. M. C.;Batuk, D.;Hadermann, J.;Zhang, Y. Z.;Ye, Z. Z.;Temst, K.;Vantomme, A.;Van Bael, M. J.;Van Haesendonck, C.;
10:52:33 Tunable electronic structure in dilute magnetic semiconductor Sr3SnO/c-YSZ/Si (001) epitaxial heterostructures
DOI:10.1063/1.4899438 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Lee, Y. F.;Narayan, J.;Schwartz, J.;
10:52:34 Magnetoresistance in semiconductor structures with hopping conductivity: Effects of random potential and generalization for the case of acceptor states
DOI:10.1103/PhysRevB.82.075201 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Agrinskaya, N. V.;Kozub, V. I.;Shumilin, A. V.;Sobko, E.;
10:52:35 Magnetoresistance effects and phase coherent transport phenomena in a magnetic nonplanar two-dimensional hole system
DOI:10.1103/PhysRevB.84.205302 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Knott, Stefan;Hirschmann, Thomas Ch.;Wurstbauer, Ursula;Hansen, Wolfgang;Wegscheider, Werner;
10:52:36 Crossover from weak localization to anti-weak localization in indium oxide systems with wide range of resistivity
DOI:10.1063/1.4801809 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Shinozaki, B.;Hidaka, K.;Ezaki, S.;Makise, K.;Asano, T.;Tomai, S.;Yano, K.;Nakamura, H.;
10:52:37 Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum
DOI:10.1016/j.tsf.2014.02.023 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Chauhan, Ram Narayan;Anand, R. S.;Kumar, Jitendra;
10:53:1 Optical and electronic properties of post-annealed ZnO:Al thin films
DOI:10.1063/1.3419859 JN:APPLIED PHYSICS LETTERS PY:2010
TC:55 AU: Kim, Yumin;Lee, Woojin;Jung, Dae-Ryong;Kim, Jongmin;Nam, Seunghoon;Kim, Hoechang;Park, Byungwoo;
10:53:2 Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure
DOI:10.1016/j.jallcom.2010.09.047 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:45 AU: Kim, Deok Kyu;Kim, Hong Bae;
10:53:3 Electrical characterization of DC sputtered ZnO/p-Si heterojunction
DOI:10.1016/j.jallcom.2011.10.005 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:12 AU: Ocak, Yusuf Selim;
10:53:4 Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
DOI:10.1016/j.jallcom.2011.03.114 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:10 AU: Ocak, Yusuf Selim;Kulakci, Mustafa;Turan, Rasit;Kilicoglu, Tahsin;Gullu, Omer;
10:53:5 Thermal stability of electrical properties of ZnO:Al films deposited by room temperature magnetron sputtering
DOI:10.1016/j.jallcom.2011.01.210 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Wang, Tao;Diao, Xungang;Ding, Peng;
10:53:6 Effect of annealing on the structural and luminescent properties of ZnO nanorod arrays grown at low temperature
DOI:10.1063/1.3586243 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Shi, Shaobo;Xu, Jianping;Zhang, Xaosong;Li, Lan;
10:53:7 A comparative study on structural, optical, photoconductivity properties of In and Al doped ZnO thin films grown onto glass and FTO substrates grown by spray pyrolysis process
DOI:10.1016/j.jallcom.2010.07.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Benhaliliba, M.;Benouis, C. E.;Aida, M. S.;Sanchez Juarez, A.;Yakuphanoglu, F.;Tiburcio Silver, A.;
10:53:8 Pulsed laser deposition of transparent ZnO/MgO multilayers
DOI:10.1016/j.jallcom.2010.09.077 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:16 AU: Kaushal, Ajay;Kaur, Davinder;
10:53:9 Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method
DOI:10.1016/j.jallcom.2012.01.103 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:18 AU: Karaagac, Hakan;Yengel, Emre;Islam, M. Saif;
10:53:10 Novel blue-violet photoluminescence from sputtered ZnO thin films
DOI:10.1016/j.jallcom.2011.02.084 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:17 AU: Liang, Zhiwen;Yu, Xiang;Lei, Bingfu;Liu, Pengyi;Mai, Wenjie;
10:53:11 Influence of oxygen partial pressure on structural, electrical, and optical properties of Al-doped ZnO film prepared by the ion beam co-sputtering method
DOI:10.1007/s10853-012-6863-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:6 AU: Chen, Yu-Yun;Hsu, Jin-Cherng;Lee, Chun-Yi;Wang, Paul W.;
10:53:12 Surface photovoltage analysis of ZnO nanorods/p-Si heterostructure
DOI:10.1016/j.mssp.2012.10.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Kang, Dawei;Bian, Jiming;Sang, Yongchang;Liu, Aimin;Sun, Jingchang;Xuan, Jun;
10:53:13 Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition
DOI:10.1016/j.apsusc.2010.11.043 JN:APPLIED SURFACE SCIENCE PY:2011
TC:15 AU: Chen, Yu-Yun;Hsu, Jin-Cherng;Wang, Paul W.;Pai, Yao-Wei;Wu, Chih-Yuan;Lin, Yung-Hsin;
10:53:14 Effects of secondary magnetic field on the properties of Al-doped ZnO films prepared by RF magnetron sputtering
DOI:10.1016/j.ceramint.2014.06.026 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Chen, Ming;Zhou, Xiying;Shao, Jiajia;Mao, Xiujuan;Yang, Guoliang;
10:53:15 A comparative study of ZnO film and nanorods for ZnO/polyfluorene inorganic/organic hybrid junction
DOI:10.1016/j.jallcom.2012.04.067 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Wu, W.;Bian, J. M.;Sun, J. C.;Cheng, C. H.;Wang, Y. X.;Luo, Y. M.;
10:53:16 Effect of Al doping on the visible photoluminescence of ZnO nanofibers
DOI:10.1016/j.jallcom.2010.07.067 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:14 AU: Liu, Yanxia;Zhang, Hongliang;An, Xiuyun;Gao, Caitian;Zhang, Zhenxing;Zhou, Jinyuan;Zhou, Ming;Xie, Erqing;
10:53:17 Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray
DOI:10.1016/j.mssp.2011.03.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:19 AU: Zebbar, N.;Kheireddine, Y.;Mokeddem, K.;Hafdallah, A.;Kechouane, M.;Aida, M. S.;
10:53:18 Synthesis and characterization of zinc oxide nanorods on silicon for the fabrication of p-Si/n-ZnO heterojunction diode
DOI:10.1016/j.jallcom.2010.08.048 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Badran, R. I.;Umar, Ahmad;Al-Heniti, S.;Al-Hajry, A.;Al-Harbi, T.;
10:53:19 The growth and conductivity of nano structured ZnO films grown on Al-doped ZnO precursor layers by pulsed laser deposition
DOI:10.1016/j.ceramint.2014.01.045 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Kumarakuru, Haridas;Cherns, David;Collins, Andrew M.;
10:53:20 Structural, optical and electrical properties of aluminum doped ZnO films annealed in air and hydrogen atmosphere
DOI:10.1016/j.jnoncrysol.2013.03.001 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2014
TC:3 AU: Wang, Paul W.;Chen, Yu-Yun;Hsu, Jin-Cherng;Wang, Cheng-yu;
10:53:21 Seaweed-ZnO Composite for Better Antibacterial Properties
DOI:10.1002/app.40948 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:0 AU: Pandimurugan, R.;Thambidurai, S.;
10:53:22 Polycrystalline ZnO Mott-barrier diodes
DOI:10.1063/1.4764555 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Liu, Zi-Jheng;Huang, Hsin-Wei;Gan, Jon-Yiew;Yew, Tri-Rung;
10:53:23 Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere
DOI:10.1016/j.apsusc.2013.07.168 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Gong, Yansheng;Wang, Chuanbin;Shen, Qiang;Zhang, Lianmeng;
10:53:24 The effect of alginates, fucans and phenolic substances from the brown seaweed Padina gymnospora in calcium carbonate mineralization in vitro
DOI:10.1016/j.jcrysgro.2011.02.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Salgado, L. T.;Amado Filho, G. M.;Fernandez, M. S.;Arias, J. L.;Farina, M.;
10:53:25 Nematic liquid crystal alignment on the ion beam-exposed ZnO film
DOI:10.1016/j.tsf.2010.08.105 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Hwang, Soo-Won;Seo, Joo-Hong;Yoon, Tae-Hoon;Kim, Jae Chang;
10:54:1 Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application
DOI:10.1002/smll.201401580 JN:SMALL PY:2014
TC:9 AU: Hsu, Cheng-Liang;Chang, Shoou-Jinn;
10:54:2 ZnO based advanced functional nanostructures: synthesis, properties and applications
DOI:10.1039/c0jm01645d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:79 AU: Ahmad, Mashkoor;Zhu, Jing;
10:54:3 Enhanced photoluminescence, Raman spectra and field-emission behavior of indium-doped ZnO nanostructures
DOI:10.1039/c3tc00082f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:30 AU: Mahmood, Khalid;Park, Seung Bin;Sung, Hyung Jin;
10:54:4 Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped ZnO Nanowires
DOI:10.1021/am200099c JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:31 AU: Ahmad, Mashkoor;Sun, Hongyu;Zhu, Jing;
10:54:5 High Field Emission Performance of Needle-on-Fiber Hierarchical-Structure ZnO
DOI:10.1111/j.1551-2916.2011.04734.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:9 AU: Liu, Yanxia;Xie, Yizhu;Chen, Jiangtao;Liu, Jing;Gao, Caitian;Yun, Chao;Lu, Bingan;Xie, Erqing;
10:54:6 Tip-morphology-dependent field emission from ZnO nanorod arrays
DOI:10.1088/0957-4484/21/22/225707 JN:NANOTECHNOLOGY PY:2010
TC:33 AU: Pan, Nan;Xue, Haizhou;Yu, Minghui;Cui, Xuefeng;Wang, Xiaoping;Hou, J. G.;Huang, Jianxing;Deng, S. Z.;
10:54:7 Influence of Li doping on the optical and magnetic properties of ZnO nanorods synthesized by low temperature hydrothermal method
DOI:10.1016/j.tsf.2012.05.044 JN:THIN SOLID FILMS PY:2013
TC:9 AU: Kung, C. Y.;Lin, C. C.;Young, S. L.;Horng, Lance;Shih, Y. T.;Kao, M. C.;Chen, H. Z.;Lin, H. H.;Lin, J. H.;Wang, S. J.;Li, J. M.;
10:54:8 Fabrication of hierarchical flower-like porous ZnO nanostructures from layered ZnC2O4 center dot 3Zn(OH)(2) and gas sensing properties
DOI:10.1016/j.apsusc.2014.03.155 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Cui, Jianshan;Sun, Jianbo;Liu, Xin;Li, Jinwei;Ma, Xinzhi;Chen, Tingting;
10:54:9 Electrochemical determination of L-Cysteine by an elbow shaped, Sb-doped ZnO nanowire-modified electrode
DOI:10.1039/c0jm01055c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:25 AU: Ahmad, Mashkoor;Pan, Caofeng;Zhu, Jing;
10:54:10 Ultrahigh field emission current density from nitrogen-implanted ZnO nanowires
DOI:10.1088/0957-4484/21/9/095701 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Zhao, Qing;Gao, Jingyun;Zhu, Rui;Cai, Tuocheng;Wang, Sheng;Song, Xuefeng;Liao, Zhimin;Chen, Xihong;Yu, Dapeng;
10:54:11 Stacked Silicon Nanowires with Improved Field Enhancement Factor
DOI:10.1021/am900490m JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:21 AU: Tzeng, Yu-Fen;Wu, Hung-Chi;Sheng, Pei-Sun;Tai, Nyan-Hwa;Chiu, Hsin Tien;Lee, Chi Young;Lin, I-Nan;
10:54:12 Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array
DOI:10.1063/1.3516156 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Xu, Hai Jun;Chan, Yu Fei;Su, Lei;Li, De Yao;Sun, Xiao Ming;
10:54:13 Effect of Pb-doping on the morphology, structural and optical properties of ZnO nanowires synthesized via modified thermal evaporation
DOI:10.1016/j.mseb.2010.03.039 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:21 AU: Ahmad, Mashkoor;Pan, Caofeng;Yan, Wang;Zhu, Jing;
10:54:14 Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film
DOI:10.1016/j.tsf.2013.02.077 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Li, Qian;Cheng, Kui;Weng, Wenjian;Du, Piyi;Han, Gaorong;
10:54:15 Synthesis and field-emission properties of novel hierarchical ZnO hexagonal towers
DOI:10.1016/j.jallcom.2012.04.003 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Wang, Ping;Zhang, Xitian;Wen, Jing;Wu, LiLi;Gao, Hong;Zhang, E.;Miao, Guoqing;
10:54:16 From Zn-4(CO3)(OH)(6)center dot H2O curling nanopetals to ZnO stretching porous nanosheets: Growth mechanism and gas sensing property
DOI:10.1016/j.tsf.2012.09.075 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Shao, Changlin;Tu, Luo;Yu, Ang;Li, Bo;Zhou, Xingfu;
10:54:17 Nanometer-scale sharpening and surface roughening of ZnO nanorods by argon ion bombardment
DOI:10.1016/j.apsusc.2012.03.157 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Chatterjee, Shyamal;Behera, Akshaya K.;Banerjee, Amarabha;Tribedi, Lokesh C.;Som, Tapobrata;Ayyub, Pushan;
10:54:18 A novel ozone detection at room temperature through UV-LED-assisted ZnO thick film sensors
DOI:10.1016/j.tsf.2011.04.173 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Carotta, M. C.;Cervi, A.;Fioravanti, A.;Gherardi, S.;Giberti, A.;Vendemiati, B.;Vincenzi, D.;Sacerdoti, M.;
10:54:19 Burstein-Moss shift and room temperature near-band-edge luminescence in lithium-doped zinc oxide
DOI:10.1007/s00339-011-6304-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:12 AU: Yogamalar, N. Rajeswari;Bose, A. Chandra;
10:54:20 Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires
DOI:10.1007/s00339-010-5636-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:12 AU: Zhao, Qing;Cai, Tuocheng;Wang, Sheng;Zhu, Rui;Liao, Zhimin;Yu, Dapeng;
10:54:21 Water- and Humidity-Enhanced UV Detector by Using p-Type La-Doped ZnO Nanowires on Flexible Polyimide Substrate
DOI:10.1021/am403364r JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:8 AU: Hsu, Cheng-Liang;Li, Hsieh-Heng;Hsueh, Ting-Jen;
10:54:22 Surface coating effect on field emission performance of ZnO nanowires
DOI:10.1007/s00339-011-6664-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:0 AU: Zhao, Qing;Zhu, Rui;Wang, Sheng;Rui, X. F.;Yu, Dapeng;
10:54:23 Zero-dimensional field emitter based on ZnO quantum dots
DOI:10.1063/1.3496443 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Zeng, Y. J.;Lin, S. S.;Volodin, A.;Lu, Y. F.;Ye, Z. Z.;Van Haesendonck, C.;
10:54:24 Terbium-Catalyzed Selective Area Growth of SiC Nanorods: Synthesis, Optimal Growth, and Field Emission Properties
DOI:10.1111/j.1551-2916.2009.03417.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:6 AU: Zhou, Jin-Yuan;Chen, Zhi-Yong;Xu, Xian-Bo;Zhou, Ming;Ma, Zi-Wei;Zhao, Jian-Guo;Li, Rui-Shan;Xie, Er-Qing;
10:55:1 Microstructures and optical, electrical and photocatalytic properties of sonochemically and hydrothermally synthesized SnO2 nanoparticles
DOI:10.1016/j.jallcom.2012.09.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:14 AU: Karunakaran, C.;Raadha, S. Sakthi;Gomathisankar, P.;
10:55:2 Facile method of synthesis of polyaniline-SnO2 hybrid nanocomposites: Microstructural, optical and electrical transport properties
DOI:10.1016/j.synthmet.2013.06.022 JN:SYNTHETIC METALS PY:2013
TC:8 AU: Khuspe, G. D.;Navale, S. T.;Chougule, M. A.;Sen, Shashwati;Agawane, G. L.;Kim, J. H.;Patil, V. B.;
10:55:3 Electrodeposition of arborous structure nanocrystalline SnO2 and application in flexible dye-sensitized solar cells
DOI:10.1016/j.jallcom.2011.10.116 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:20 AU: Chen, Zeng;Tian, Yafang;Li, Shengjun;Zheng, Haiwu;Zhang, Weifeng;
10:55:4 Synthesis of SnO2 functionalized amorphous carbon nanotube for efficient electron field emission application
DOI:10.1016/j.jallcom.2013.03.244 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Banerjee, D.;Nawn, D.;Chattopadhyay, K. K.;
10:55:5 Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies
DOI:10.1016/j.jallcom.2013.02.069 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Sakhare, R. D.;Khuspe, G. D.;Navale, S. T.;Mulik, R. N.;Chougule, M. A.;Pawar, R. C.;Lee, C. S.;Sen, Shashwati;Patil, V. B.;
10:55:6 Photoelectrochemical properties of ZnO-SnO2 films prepared by sol-gel method
DOI:10.1016/j.jallcom.2012.11.196 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Uchiyama, Hiroaki;Nagao, Ryosuke;Kozuka, Hiromitsu;
10:55:7 Photocatalytic activity of galvanically synthesized nanostructure SnO2 thin films
DOI:10.1016/j.jallcom.2014.02.182 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Jana, Sumanta;Mitra, Bibhas Chandra;Bera, Pulakesh;Sikdar, Moushumi;Mondal, Anup;
10:55:8 Fabrication of nanostructured ZnO thin film sensor for NO2 monitoring
DOI:10.1016/j.ceramint.2011.11.036 JN:CERAMICS INTERNATIONAL PY:2012
TC:27 AU: Chougule, M. A.;Sen, Shashwati;Patil, V. B.;
10:55:9 Synthesis of Fe2O3 nanoparticles for nitrogen dioxide gas sensing applications
DOI:10.1016/j.ceramint.2013.01.074 JN:CERAMICS INTERNATIONAL PY:2013
TC:29 AU: Navale, S. T.;Bandgar, D. K.;Nalage, S. R.;Khuspe, G. D.;Chougule, M. A.;Kolekar, Y. D.;Sen, Shashwati;Patil, V. B.;
10:55:10 Synthesis, characterization and photocatalysis of SnO2 nanorods with large aspect ratios
DOI:10.1016/j.matlet.2011.07.036 JN:MATERIALS LETTERS PY:2011
TC:21 AU: Cheng, Guoe;Chen, Jinyan;Ke, Hanzhong;Shang, Jin;Chu, Rui;
10:55:11 Nanostructured SnO2 thin films for NO2 gas sensing applications
DOI:10.1016/j.ceramint.2013.04.047 JN:CERAMICS INTERNATIONAL PY:2013
TC:18 AU: Khuspe, G. D.;Sakhare, R. D.;Navale, S. T.;Chougule, M. A.;Kolekar, Y. D.;Mulik, R. N.;Pawar, R. C.;Lee, C. S.;Patil, V. B.;
10:55:12 Fussy nanofibrous network of polyaniline (PANi) for NH3 detection
DOI:10.1016/j.synthmet.2012.08.022 JN:SYNTHETIC METALS PY:2012
TC:21 AU: Khuspe, G. D.;Bandgar, D. K.;Sen, Shashwati;Patil, V. B.;
10:55:13 CSA doped polyaniline/CdS organic-inorganic nanohybrid: Physical and gas sensing properties
DOI:10.1016/j.ceramint.2012.03.064 JN:CERAMICS INTERNATIONAL PY:2012
TC:21 AU: Raut, B. T.;Chougule, M. A.;Nalage, S. R.;Dalavi, D. S.;Mali, Sawanta;Patil, P. S.;Patil, V. B.;
10:55:14 Camphor sulfonic acid doped polyaniline-tin oxide hybrid nanocomposites: Synthesis, structural, morphological, optical and electrical transport properties
DOI:10.1016/j.ceramint.2013.08.091 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Khuspe, G. D.;Chougule, M. A.;Navale, S. T.;Pawar, S. A.;Patil, V. B.;
10:55:15 SnO(2)nanoparticles-modified Polyaniline Films as Highly Selective, Sensitive, Reproducible and Stable Ammonia Sensors
DOI:10.1007/s13391-013-3096-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:23 AU: Khuspe, G. D.;Navale, S. T.;Bandgar, D. K.;Sakhare, R. D.;Chougule, M. A.;Patil, V. B.;
10:55:16 New process for synthesis of ZnO thin films: Microstructural, optical and electrical characterization
DOI:10.1016/j.jallcom.2011.08.030 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:23 AU: Patil, S. L.;Chougule, M. A.;Pawar, S. G.;Raut, B. T.;Sen, Shashwati;Patil, V. B.;
10:55:17 Plasma electrolytic oxidation preparation and characterization of SnO2 film
DOI:10.1016/j.jallcom.2010.09.112 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:13 AU: He, J.;Cai, Q. Z.;Xiao, F.;Lie, X. W.;Sun, W.;Zhao, X.;
10:55:18 Structures and properties of SnO2 nanofibers derived from two different polymer intermediates
DOI:10.1007/s10853-012-7122-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:6 AU: Xia, Xin;Li, Shuli;Wang, Xin;Liu, Junxiong;Wei, Qufu;Zhang, Xiangwu;
10:55:19 Highly sensitive, reproducible, selective and stable CSA-polypyrrole NO2 sensor
DOI:10.1016/j.synthmet.2014.01.005 JN:SYNTHETIC METALS PY:2014
TC:6 AU: Navale, S. T.;Chougule, M. A.;Patil, V. B.;Mane, A. T.;
10:55:20 NO2 sensing properties of nanostructured tungsten oxide thin films
DOI:10.1016/j.ceramint.2014.08.001 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Mane, A. T.;Kulkarni, S. B.;Navale, S. T.;Ghanwat, A. A.;Shinde, N. M.;Kim, JunHo;Patil, V. B.;
10:55:21 Comparative AFM studies of water processable polyaniline films: Influence of reaction time on nanomorphology and conductivity
DOI:10.1016/j.matlet.2014.06.003 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Mondschein, Jared S.;Kowalski, Adam;Kehlbeck, Joanne D.;Hagerman, Michael E.;Cortez, Rebecca;
10:55:22 Anomalous conductivity-type transition sensing behaviors of n-type porous alpha-Fe2O3 nanostructures toward H2S
DOI:10.1016/j.mseb.2011.02.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:16 AU: Hao, Quanyi;Li, Limiao;Yin, Xiaoming;Liu, Shuang;Li, Qiuhong;Wang, Taihong;
10:55:23 Polypyrrole-ZnO hybrid sensor: Effect of camphor sulfonic acid doping on physical and gas sensing properties
DOI:10.1016/j.synthmet.2012.07.002 JN:SYNTHETIC METALS PY:2012
TC:11 AU: Chougule, M. A.;Sen, Shashwati;Patil, V. B.;
10:55:24 Sol-gel synthesis of nickel oxide thin films and their characterization
DOI:10.1016/j.tsf.2012.02.072 JN:THIN SOLID FILMS PY:2012
TC:23 AU: Nalage, S. R.;Chougule, M. A.;Sen, Shashwati;Joshi, P. B.;Patil, V. B.;
10:55:25 Ball milled SnO2: a modified vapor source for growing nanostructures
DOI:10.1016/j.jallcom.2010.02.193 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Tao, Tao;Glushenkov, Alexey M.;Hu, Huiping;Chen, Qiyuan;Chen, Ying;
10:55:26 Development of nanostructured polyaniline-titanium dioxide gas sensors for ammonia recognition
DOI:10.1002/app.35468 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:21 AU: Pawar, S. G.;Chougule, M. A.;Sen, Shashwati;Patil, V. B.;
10:55:27 Room temperature NO2 gas sensor based on PPy/alpha-Fe2O3 hybrid nanocomposites
DOI:10.1016/j.ceramint.2013.12.153 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Navale, S. T.;Khuspe, G. D.;Chougule, M. A.;Patil, V. B.;
10:55:28 Surface acidity and catalytic activity of aged SO42-/SnO2 catalyst supported with WO3
DOI:10.1016/j.jallcom.2013.05.145 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Alaya, M. Nasouh;Rabah, Marwa A.;
10:55:29 C2H5OH Gas Sensing Based on Poly(3-hexylthiophene)/Nb-Loaded ZnO Nanocomposite Films
DOI:10.1080/15421406.2014.934317 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:1 AU: Kruefu, Viruntachar;Wisitsoraat, Anurat;Tuantranont, Adisom;Phanichphant, Sukon;
10:55:30 Novel route for fabrication of nanostructured alpha-Fe2O3 gas sensor
DOI:10.1016/j.mssp.2013.08.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:7 AU: Bandgar, D. K.;Navale, S. T.;Khuspe, G. D.;Pawar, S. A.;Mulik, R. N.;Patil, V. B.;
10:55:31 Fabrication and field emission of carbon nanotubes/TiO(2)/Ti composite nanostructures
DOI:10.1116/1.3516017 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:1 AU: Chen, Jian-Biao;Wang, Cheng-Wei;Guo, Rui-Sheng;Wang, Lin-Qing;Zhu, Wei-Dong;Zhou, Feng;Liu, Wei-Min;
10:55:32 Morphosynthesis and morphology characterization of aniline and aniline/Laponite films
DOI:10.1016/j.matlet.2011.06.116 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Peace, Bernadette;Topka, Michael;Skorenko, Kenneth;Kowalski, Adam;Williams, Ursula;Hagerman, Michael;Cortez, Rebecca;
10:55:33 Synthesis and selective gas-sensing properties of hierarchically porous intestine-like SnO2 hollow nanostructures
DOI:10.1016/j.matchemphys.2010.03.068 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:7 AU: Liu, Shunqiang;Xie, Mingjiang;Li, Yanxing;Guo, Xuefeng;Ji, Weijie;Ding, Weiping;
10:56:1 Defects induced ferromagnetism in Mn doped ZnO
DOI:10.1016/j.jmmm.2010.09.042 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:32 AU: Chattopadhyay, S.;Neogi, S. K.;Sarkar, A.;Mukadam, M. D.;Yusuf, S. M.;Banerjee, A.;Bandyopadhyay, S.;
10:56:2 Structural and magnetic properties of Mn-doped ZnO powders
DOI:10.1016/j.jmmm.2011.03.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:24 AU: El-Hilo, M.;Dakhel, A. A.;
10:56:3 Enhanced indirect ferromagnetic p-d exchange coupling of Mn in oxygen rich ZnO:Mn nanoparticles synthesized by wet chemical method
DOI:10.1063/1.3679129 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Ilyas, Usman;Rawat, R. S.;Tan, T. L.;Lee, P.;Chen, R.;Sun, H. D.;Li Fengji;Zhang, Sam;
10:56:4 Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films
DOI:10.1016/j.apsusc.2012.03.043 JN:APPLIED SURFACE SCIENCE PY:2012
TC:14 AU: Ilyas, Usman;Rawat, R. S.;Wang, Y.;Tan, T. L.;Lee, P.;Chen, R.;Sun, H. D.;Li, Fengji;Zhang, Sam;
10:56:5 Structural; morphological; optical and magnetic properties of Mn doped ferromagnetic ZnO thin film
DOI:10.1016/j.apsusc.2012.09.133 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Karmakar, R.;Neogi, S. K.;Banerjee, Aritra;Bandyopadhyay, S.;
10:56:6 Role of additives; sodium dodecyl sulphate and manganese chloride on morphology of Zn1-xMnxO nanoparticles and their photoluminescence properties
DOI:10.1016/j.matchemphys.2014.05.010 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Pandey, Gajanan;Dixit, Supriya;Shrivastava, A. K.;
10:56:7 Ferromagnetic nanocrystalline Gd-doped ZnO powder synthesized by coprecipitation
DOI:10.1063/1.3448026 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Dakhel, A. A.;El-Hilo, M.;
10:56:8 Defect mediated ferromagnetism in Ni-doped ZnO nanocrystals evidenced by positron annihilation spectroscopy
DOI:10.1063/1.4759136 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Chen, Zhi-Yuan;Chen, Z. Q.;Zou, B.;Zhao, X. G.;Tang, Z.;Wang, S. J.;
10:56:9 Room-temperature ferromagnetism in Zn1-xMnxO
DOI:10.1016/j.jmmm.2009.10.046 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:24 AU: Hakeem, A. M. Abdel;
10:56:10 Different magnetic origins of (Mn, Fe)-codoped ZnO powders and thin films
DOI:10.1016/j.materresbull.2012.07.028 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Fan, Jiuping;Jiang, Fengxian;Quan, Zhiyong;Qing, Xiufang;Xu, Xiaohong;
10:56:11 Structural, chemical and magnetic investigations of polycrystalline Zn1-xMnxO
DOI:10.1016/j.jmmm.2009.10.011 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:18 AU: Deshmukh, Alka V.;Patil, S. I.;Yusuf, S. M.;Rajarajan, A. K.;Lalla, N. P.;
10:56:12 Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium
DOI:10.1063/1.4867036 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Sivagamasundari, A.;Chandrasekar, S.;Pugaze, R.;Rajagopan, S.;Kannan, R.;
10:56:13 Regulation of Magnetic Behavior and Electronic Configuration in Mn-Doped ZnO Nanorods through Surface Modifications
DOI:10.1021/cm203661c JN:CHEMISTRY OF MATERIALS PY:2012
TC:17 AU: Zhang, Linjuan;Wang, Jian-Qiang;Li, Jiong;Zhang, Shuo;Jiang, Zheng;Zhou, Jing;Cheng, Jie;Hu, Tiandou;Yan, Wensheng;Wei, Xiangjun;Wu, Ziyu;
10:56:14 Strain dependent defect mediated ferromagnetism in Mn-doped and undoped ZnO thin films
DOI:10.1063/1.3455856 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Schoofs, Frank;Fix, Thomas;Hakimi, Ali M. H. R.;Dhesi, Sarnjeet S.;van der Laan, Gerrit;Cavill, Stuart A.;Langridge, Sean;MacManus-Driscoll, Judith L.;Blamire, Mark G.;
10:56:15 Oxygen rich p-type ZnO thin films using wet chemical route with enhanced carrier concentration by temperature-dependent tuning of acceptor defects
DOI:10.1063/1.3660284 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:17 AU: Ilyas, Usman;Rawat, R. S.;Tan, T. L.;Lee, P.;Chen, R.;Sun, H. D.;Li Fengji;Zhang, Sam;
10:56:16 Influence of Mn doping on structural, optical, and magnetic properties of Zn1-xMnxO nanorods
DOI:10.1063/1.3478709 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Phan, The-Long;Yu, S. C.;Vincent, R.;Bui, H. M.;Thanh, T. D.;Lam, V. D.;Lee, Y. P.;
10:56:17 Enhanced ferromagnetic response in ZnO:Mn thin films by tailoring composition and defect concentration
DOI:10.1016/j.jmmm.2013.05.040 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:5 AU: Ilyas, Usman;Tan, T. L.;Lee, P.;Ramanujan, R. V.;Li, Fengji;Zhang, Sam;Chen, R.;Sun, H. D.;Rawat, R. S.;
10:56:18 Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency
DOI:10.1016/j.apsusc.2011.09.021 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Ilyas, Usman;Rawat, R. S.;Roshan, G.;Tan, T. L.;Lee, P.;Springham, S. V.;Zhang, Sam;Li Fengji;Chen, R.;Sun, H. D.;
10:56:19 Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films
DOI:10.1063/1.3481800 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Kumar, S. R. Sarath;Hedhili, Mohamed Nejib;Alshareef, H. N.;Kasiviswanathan, S.;
10:56:20 Ferromagnetic properties of Cu- and Fe-codoped nanocrystalline CdO powders: Annealing in hydrogen promote long-range ferromagnetic order
DOI:10.1016/j.apt.2014.07.015 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:0 AU: Dakhel, A. A.;El-Hilo, M.;Bououdina, M.;
10:56:21 Probing defects in chemically synthesized ZnO nanostrucures by positron annihilation and photoluminescence spectroscopy
DOI:10.1063/1.3483247 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Chaudhuri, S. K.;Ghosh, Manoranjan;Das, D.;Raychaudhuri, A. K.;
10:56:22 Ferromagnetism of Zn0.95Mn0.05O controlled by concentration of zinc acetate in ionic liquid precursor
DOI:10.1016/j.matchemphys.2010.04.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:5 AU: Xiao, Wenjun;Chen, Qin;Wu, Ying;Wu, Tinghua;Dai, Lizong;
10:56:23 Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase
DOI:10.1016/j.jmmm.2013.07.029 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:3 AU: Neogi, S. K.;Karmakar, R.;Misra, A. K.;Banerjee, A.;Das, D.;Bandyopadhyay, S.;
10:56:24 Structural, optical and magnetic characterizations of Mn-doped MgO nanoparticles
DOI:10.1016/j.matchemphys.2013.12.006 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:4 AU: Azzaza, S.;El-Hilo, M.;Narayanan, S.;Vijaya, J. Judith;Mamouni, N.;Benyoussef, A.;El Kenz, A.;Bououdina, M.;
10:56:25 Magnetic Exciton Relaxation and Spin-Spin Interaction by the Time-Delayed Photoluminescence Spectra of ZnO:Mn Nanowires
DOI:10.1021/am501835j JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Liu, Ruibin;Shi, Lijie;Zou, Bingsuo;
10:56:26 Influence of Tb doping on the luminescence characteristics of ZnO nanoparticles
DOI:10.1007/s11051-011-0676-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Sharma, A.;Dhar, S.;Singh, B. P.;Kundu, T.;Spasova, M.;Farle, M.;
10:56:27 Surface strain engineering through Tb doping to study the pressure dependence of exciton-phonon coupling in ZnO nanoparticles
DOI:10.1063/1.4838055 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Sharma, A.;Dhar, S.;Singh, B. P.;Nayak, C.;Bhattacharyya, D.;Jha, S. N.;
10:56:28 Room temperature ferromagnetism in Tb doped ZnO nanocrystalline films
DOI:10.1016/j.jmmm.2011.08.017 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:3 AU: Wu, Z.;Liu, X. C.;Huang, J. C. A.;
10:56:29 Reaction processes in a ZnO+1%Gd2O3 powder mixture during mechanical and laser processing
DOI:10.1016/j.mseb.2012.01.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:1 AU: Kakazey, M.;Vlasova, M.;Marquez Aguilar, P. A.;Coeto, B. Sosa;Gurdian Tapia, R.;Sobolev, N. A.;
10:56:30 On the structural analysis and magnetic behavior of heavily doped Zn1-xMnxO nanopowders synthesized by wet chemistry method
DOI:10.1016/j.jmmm.2011.12.025 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:1 AU: Mera, J.;Cordoba, C.;Paucar, C.;Gomez, A.;Fuchs, D.;Moran, O.;
10:56:31 Effect of indium doping on ZnO based-gas sensor for CO
DOI:10.1016/j.mssp.2014.07.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:9 AU: Hjiri, M.;Dhahri, R.;Omri, K.;El Mir, L.;Leonardi, S. G.;Donato, N.;Neri, G.;
10:57:1 ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing
DOI:10.1155/2013/196521 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:13 AU: Liu, Yanli;Li, Yufang;Zeng, Haibo;
10:57:2 Low temperature Si doped ZnO thin films for transparent conducting oxides
DOI:10.1016/j.solmat.2011.04.006 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:31 AU: Clatot, J.;Campet, G.;Zeinert, A.;Labrugere, C.;Nistor, M.;Rougier, A.;
10:57:3 Optical properties of zinc oxide thin films doped with aluminum and lithium
DOI:10.1016/j.tsf.2009.12.041 JN:THIN SOLID FILMS PY:2010
TC:28 AU: Galca, A. C.;Secu, M.;Vlad, A.;Pedarnig, J. D.;
10:57:4 Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films
DOI:10.1016/j.tsf.2011.10.194 JN:THIN SOLID FILMS PY:2012
TC:14 AU: Galca, A. C.;Socol, G.;Craciun, V.;
10:57:5 Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates
DOI:10.1016/j.apsusc.2012.02.148 JN:APPLIED SURFACE SCIENCE PY:2012
TC:16 AU: Socol, G.;Socol, M.;Stefan, N.;Axente, E.;Popescu-Pelin, G.;Craciun, D.;Duta, L.;Mihailescu, C. N.;Mihailescu, I. N.;Stanculescu, A.;Visan, D.;Sava, V.;Galca, A. C.;Luculescu, C. R.;Craciun, V.;
10:57:6 Stoichiometry dependence of the optical properties of amorphous-like Inx-wGawZn1-xO1+0.5x-delta thin films
DOI:10.1016/j.apsusc.2013.01.176 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Galca, A. C.;Socol, G.;Trinca, L. M.;Craciun, V.;
10:57:7 High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition
DOI:10.1016/j.tsf.2011.04.196 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Socol, G.;Craciun, D.;Mihailescu, I. N.;Stefan, N.;Besleaga, C.;Ion, L.;Antohe, S.;Kim, K. W.;Norton, D.;Pearton, S. J.;Galca, A. C.;Craciun, V.;
10:57:8 Self-seeded electrochemical growth of ZnO nanorods using textured glass/Al-doped ZnO substrates
DOI:10.1016/j.apsusc.2014.06.031 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Antohe, Vlad-Andrei;Mickan, Martin;Henry, Frederic;Delamare, Romain;Gence, Loik;Piraux, Luc;
10:57:9 Optical properties of amorphous indium zinc oxide thin films synthesized by pulsed laser deposition
DOI:10.1016/j.apsusc.2014.03.189 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Craciun, V.;Martin, C.;Socol, G.;Tanner, D.;Swart, H. C.;Becherescu, N.;Craciun, D.;
10:57:10 Co-sputtered ZnO:Si thin films as transparent conductive oxides
DOI:10.1016/j.tsf.2012.10.006 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Faure, C.;Clatot, J.;Teule-Gay, L.;Campet, G.;Labrugere, C.;Nistor, M.;Rougier, A.;
10:57:11 Room temperature transparent conducting oxides based on zinc oxide thin films
DOI:10.1016/j.apsusc.2010.12.010 JN:APPLIED SURFACE SCIENCE PY:2011
TC:15 AU: Clatot, J.;Campet, G.;Zeinert, A.;Labrugere, C.;Rougier, A.;
10:57:12 On the structural, morphological, optical and electrical properties of sol-gel deposited ZnO In films
DOI:10.1016/j.tsf.2010.07.006 JN:THIN SOLID FILMS PY:2010
TC:26 AU: Girtan, M.;Socol, M.;Pattier, B.;Sylla, M.;Stanculescu, A.;
10:57:13 Structural investigations of InZnO films grown by pulsed laser deposition technique
DOI:10.1016/j.tsf.2009.12.032 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Craciun, Doina;Socol, Gabriel;Stefan, Nicolaie;Miroiu, Marimona;Craciun, Valentin;
10:57:14 Tailoring the optical properties of Mg (x) Zn1-x O thin films by nitrogen doping
DOI:10.1007/s00339-011-6433-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Epurescu, G.;Birjega, R.;Galca, A. C.;
10:57:15 Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition
DOI:10.1007/s00339-014-8427-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Axente, E.;Socol, G.;Beldjilali, S. A.;Mercadier, L.;Luculescu, C. R.;Trinca, L. M.;Galca, A. C.;Pantelica, D.;Ionescu, P.;Becherescu, N.;Hermann, J.;Craciun, V.;
10:57:16 On the properties of aluminium doped zinc oxide thin films deposited on plastic substrates from ceramic targets
DOI:10.1016/j.apsusc.2013.03.046 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Girtan, M.;Vlad, A.;Mallet, R.;Bodea, M. A.;Pedarnig, J. D.;Stanculescu, A.;Mardare, D.;Leontie, L.;Antohe, S.;
10:57:17 Influence of Si concentration on electrical and optical properties of room temperature ZnO:Si thin films
DOI:10.1016/j.tsf.2013.01.046 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Clatot, J.;Nistor, M.;Rougier, A.;
10:57:18 The electrical, optical and magnetic properties of Si-doped ZnO films
DOI:10.1016/j.apsusc.2011.02.093 JN:APPLIED SURFACE SCIENCE PY:2012
TC:18 AU: Luo, J. T.;Zhu, X. Y.;Chen, G.;Zeng, F.;Pan, F.;
10:57:19 Characterization of ZnO structures by optical and X-ray methods
DOI:10.1016/j.apsusc.2012.12.035 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Petrik, P.;Pollakowski, B.;Zakel, S.;Gumprecht, T.;Beckhoff, B.;Lemberger, M.;Labadi, Z.;Baji, Z.;Jank, M.;Nutsch, A.;
10:57:20 From ZnF2 to ZnO thin films using pulsed laser deposition: Optical and electrical properties
DOI:10.1016/j.solmat.2012.07.008 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:10 AU: Thimont, Y.;Clatot, J.;Nistor, M.;Labrugere, C.;Rougier, A.;
10:57:21 Non-parabolicity and band gap re-normalisation in Si doped ZnO
DOI:10.1063/1.4863875 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Treharne, R. E.;Phillips, L. J.;Durose, K.;Weerakkody, A.;Mitrovic, I. Z.;Hall, S.;
10:57:22 A novel reflector of AZO thin films applicable for terahertz devices
DOI:10.1016/j.optmat.2013.01.015 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Lai, Wei-En;Zhu, Yao-Hua;Zhang, Huai-Wu;Wen, Qi-Ye;
10:57:23 Fluorine doped ZnO thin films by RF magnetron sputtering
DOI:10.1016/j.tsf.2010.12.126 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Treharne, R. E.;Durose, K.;
10:57:24 Approaches to calculate the dielectric function of ZnO around the band gap
DOI:10.1016/j.tsf.2014.03.028 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Agocs, E.;Fodor, B.;Pollakowski, B.;Beckhoff, B.;Nutsch, A.;Jank, M.;Petrik, P.;
10:57:25 Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition
DOI:10.1007/s00339-012-7198-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Bodea, M. A.;Sbarcea, G.;Naik, G. V.;Boltasseva, A.;Klar, T. A.;Pedarnig, J. D.;
10:57:26 ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell
DOI:10.1016/j.solmat.2013.04.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:6 AU: Bethge, O.;Nobile, M.;Abermann, S.;Glaser, M.;Bertagnolli, E.;
10:57:27 Deposition of ZnO rods by electrochemically induced hydrolysis
DOI:10.1016/j.apsusc.2013.10.163 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Steegstra, Patrick;Ahlberg, Elisabet;
10:57:28 Preparation and characterization of the defect-conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency-magnetron sputtering
DOI:10.1557/JMR.2010.0300 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:2 AU: Lalanne, M.;Soon, J. M.;Barnabe, A.;Presmanes, L.;Pasquet, I.;Tailhades, Ph;
10:57:29 Optical modelling of fluorine doped ZnO
DOI:10.1016/j.tsf.2011.04.155 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Treharne, R. E.;Durose, K.;
10:58:1 Room temperature hydrogen gas sensor based on ZnO nanorod arrays grown on a SiO2/Si substrate via a microwave-assisted chemical solution method
DOI:10.1016/j.jallcom.2012.08.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:28 AU: Hassan, J. J.;Mahdi, M. A.;Chin, C. W.;Abu-Hassan, H.;Hassan, Z.;
10:58:2 Ultrathin percolated WO3 cluster film and its resistive response to H-2
DOI:10.1016/j.jallcom.2014.05.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Zhao, Meng;Wong, Man Hon;Huang, Jian Xing;Ong, Chung Wo;
10:58:3 Preparation of porous flower-like CuO/ZnO nanostructures and analysis of their gas-sensing property
DOI:10.1016/j.jallcom.2013.04.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:28 AU: Huang, Jiarui;Dai, Yijuan;Gu, Cuiping;Sun, Yufeng;Liu, Jinhuai;
10:58:4 Fabrication and gas sensing properties of hollow core-shell SnO2/alpha-Fe2O3 heterogeneous structures
DOI:10.1016/j.jallcom.2013.10.176 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:24 AU: Wang, B. B.;Fu, X. X.;Liu, F.;Shi, S. L.;Cheng, J. P.;Zhang, X. B.;
10:58:5 A comparative study of porous ZnO nanostructures synthesized from different zinc salts as gas sensor materials
DOI:10.1016/j.jallcom.2013.05.211 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:16 AU: Song, Haiyan;Yang, Heng;Ma, Xicheng;
10:58:6 Synthesis of ZnO nanorods by spray pyrolysis for H2S gas sensor
DOI:10.1016/j.jallcom.2012.03.020 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:44 AU: Shinde, S. D.;Patil, G. E.;Kajale, D. D.;Gaikwad, V. B.;Jain, G. H.;
10:58:7 Synthesis, characterization and sensing properties of ZnO-modified BN-FeB49
DOI:10.1016/j.jallcom.2014.02.103 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Zhao, Tiekai;Zhang, Lianping;Li, Li;Zhang, Guo;Kankan;Shi, Keying;
10:58:8 Synthesis and characterization of NiO/TiO2 porous films and their photocurrent-enhanced mechanism in gas phase
DOI:10.1016/j.jallcom.2013.09.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Yu, Xueli;Xie, Changsheng;Zou, Zhijun;Yang, Li;Zou, Tao;Zhang, Guozhu;
10:58:9 Large-scale syntheses of uniform ZnO nanorods and ethanol gas sensors application
DOI:10.1016/j.jallcom.2010.09.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:29 AU: Chen, Jin;Li, Jin;Li, Jiahui;Xiao, Guoqing;Yang, Xiaofeng;
10:58:10 General and scalable route to synthesize nanowire-structured semiconducting metal oxides for gas-sensor applications
DOI:10.1016/j.jallcom.2012.09.051 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:16 AU: Nguyen Duc Hoa;Vu Van Quang;Kim, Dojin;Nguyen Van Hieu;
10:58:11 PEDOT:PSS shell on CdS nanowires: Room temperature LPG sensor
DOI:10.1016/j.jallcom.2013.12.090 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Sonawane, N. B.;Ahire, R. R.;Gurav, K. V.;Kim, J. H.;Sankapal, B. R.;
10:58:12 Effect of post-annealing treatment on the microstructure and optical properties of ZnO/PS nanocomposite films
DOI:10.1016/j.jallcom.2013.02.179 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Ma, S. Y.;Yang, X. H.;Huang, X. L.;Sun, A. M.;Song, H. S.;Zhu, H. B.;
10:58:13 Preparation of Pr-doped SnO2 hollow nanofibers by electrospinning method and their gas sensing properties
DOI:10.1016/j.jallcom.2014.03.182 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:10 AU: Li, W. Q.;Ma, S. Y.;Li, Y. F.;Li, X. B.;Wang, C. Y.;Yang, X. H.;Cheng, L.;Mao, Y. Z.;Luo, J.;Gengzang, D. J.;Wan, G. X.;Xu, X. L.;
10:58:14 Ethanol sensing properties of porous ZnO spheres via hydrothermal route
DOI:10.1007/s10853-012-7103-x JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:13 AU: Wang, Wenchuang;Tian, Yongtao;Wang, Xinchang;He, Hao;Xu, Yurui;He, Chuan;Li, Xinjian;
10:58:15 Enhanced NO2 sensing using ZnO-TiO2 nanocomposite thin films
DOI:10.1016/j.jallcom.2012.11.059 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Vyas, Rishi;Sharma, Sarla;Gupta, Parul;Vijay, Y. K.;Prasad, Arun K.;Tyagi, A. K.;Sachdev, K.;Sharma, S. K.;
10:58:16 Role of substrate temperature on the properties of Na-doped ZnO thin film nanorods and performance of ammonia gas sensors using nebulizer spray pyrolysis technique
DOI:10.1016/j.jallcom.2013.08.048 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Mariappan, R.;Ponnuswamy, V.;Suresh, R.;Suresh, P.;Bose, A. Chandra;Ragavendar, M.;
10:58:17 p-PEDOT:PSS as a heterojunction partner with n-ZnO for detection of LPG at room temperature
DOI:10.1016/j.jallcom.2011.11.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Ladhe, R. D.;Gurav, K. V.;Pawar, S. M.;Kim, J. H.;Sankapal, B. R.;
10:58:18 Template free hydrothermal synthesis and gas sensing application of lanthanum cuprate (La2CuO4): Effect of precursors on phase formation and morphology
DOI:10.1016/j.jallcom.2013.12.141 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Dharmadhikari, Dipti V.;Nikam, Shrikant K.;Athawale, Anjali A.;
10:58:19 Synthesis of ZnO nanowires on aluminum flake by aqueous method
DOI:10.1007/s00339-013-7845-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Yu, Naisen;Zhao, Haifeng;Zhang, Ligong;Hu, Danyang;Ma, Xueying;Dong, Bin;
10:58:20 Effect of annealing on the microstructure and optical properties of ZnO/V2O5 composite
DOI:10.1063/1.3566997 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Zou, C. W.;Yan, X. D.;Chen, R. Q.;Wu, Z. Y.;Alyamani, A.;Gao, W.;
10:58:21 Bacterial cellulose-assisted hydrothermal synthesis and catalytic performance of La2CuO4 nanofiber for methanol steam reforming
DOI:10.1016/j.ijhydene.2013.01.015 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:2 AU: Yang, Jiazhi;Tang, Weihua;Liu, Xiaoli;Chao, Cheng;Liu, Jianguo;Sun, Dongping;
10:58:22 Stability of hydrogen-induced optical switching properties of palladium-coated magnesium-nickel films
DOI:10.1016/j.ssi.2010.09.043 JN:SOLID STATE IONICS PY:2011
TC:2 AU: Tang, Y. M.;Ong, C. W.;
10:59:1 Preparation of porous flower-like ZnO nanostructures and their gas-sensing property
DOI:10.1016/j.jallcom.2010.11.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:34 AU: Gu, Cuiping;Huang, Jiarui;Wu, Youjie;Zhai, Muheng;Sun, Yufeng;Liu, Jinhuai;
10:59:2 Controlled synthesis of ZnO nanostructures with assorted morphologies via simple solution chemistry
DOI:10.1016/j.jallcom.2012.10.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:21 AU: Baviskar, Prashant Kishor;Nikam, Pratibha Rajaram;Gargote, Sandip Shankarrao;Ennaoui, Ahmed;Sankapal, Babasaheb Raghunath;
10:59:3 Morphology evolution of ZnO thin films from aqueous solutions and their application to liquefied petroleum gas (LPG) sensor
DOI:10.1016/j.jallcom.2012.01.082 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:14 AU: Gurav, K. V.;Patil, U. M.;Shin, S. W.;Pawar, S. M.;Kim, J. H.;Lokhande, C. D.;
10:59:4 Large-scale preparation of chestnut-like ZnO and Zn-ZnO hollow nanostructures by chemical vapor deposition
DOI:10.1016/j.jallcom.2010.04.042 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:29 AU: Wang, S. L.;Jia, X.;Jiang, P.;Fang, H.;Tang, W. H.;
10:59:5 Shape-controlled synthesis and photocatalytic properties of three-dimensional and porous zinc oxide
DOI:10.1016/j.jallcom.2010.12.073 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:18 AU: Ma, Peiyan;Wu, Yan;Fu, Zhengyi;Wang, Weimin;
10:59:6 Growth and optical properties of a- and c-axis oriented Zn-ZnO nanocables fabricated via a facile one-step process
DOI:10.1016/j.jallcom.2012.11.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Chen, Yen-Chih;Tu, Chia-Hao;Lai, Yi-Feng;Hsu, Kuang-Yuan;Liu, Chuan-Pu;
10:59:7 Influence of ZnO content and annealing temperature on the dielectric properties of ZnO/Al2O3 composite coatings
DOI:10.1016/j.jallcom.2011.03.018 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Zhou, Liang;Zhou, Wancheng;Liu, Tao;Luo, Fa;Zhu, Dongmei;
10:59:8 Preparation of zinc oxide particles by using layered basic zinc acetate as a precursor
DOI:10.1016/j.jallcom.2012.07.138 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:4 AU: Tang, Lanqin;Ding, Xuefeng;Zhao, Xu;Wang, Zichen;Zhou, Bing;
10:59:9 Room temperature soft chemical route for nanofibrous wurtzite ZnO thin film synthesis
DOI:10.1016/j.apsusc.2009.09.080 JN:APPLIED SURFACE SCIENCE PY:2010
TC:30 AU: Gurav, K. V.;Fulari, V. J.;Patil, U. M.;Lokhande, C. D.;Joo, Oh-Shim;
10:59:10 Chemical route to synthesis of mesoporous ZnO thin films and their liquefied petroleum gas sensor performance
DOI:10.1016/j.jallcom.2011.08.046 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Dhawale, D. S.;Lokhande, C. D.;
10:59:11 Optimization of transparent conducting oxide ZnO compound thickness in terms of four alloys thermo-physical performance aggregates
DOI:10.1016/j.jallcom.2010.12.154 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Amlouk, A.;Boubaker, K.;Bouhafs, M.;Amlouk, M.;
10:59:12 Phase evolution from rod-like ZnO to plate-like zinc hydroxysulfate during electrochemical deposition
DOI:10.1016/j.jallcom.2009.12.129 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Wang, Lida;Liu, Guichang;Zou, Longjiang;Xue, Dongfeng;
10:59:13 Nanobeads of zinc oxide with rhodamine B dye as a sensitizer for dye sensitized solar cell application
DOI:10.1016/j.jallcom.2011.08.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:17 AU: Baviskar, P. K.;Zhang, J. B.;Gupta, V.;Chand, S.;Sankapal, B. R.;
10:59:14 Room temperature synthesis of ZnO nanoflowers on Si substrate via seed-layer assisted solution route
DOI:10.1016/j.jallcom.2010.05.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Li, Qian;Sun, Haikuo;Luo, Ming;Weng, Wenjian;Cheng, Kui;Song, Chenlu;Du, Piyi;Shen, Ge;Han, Gaorong;
10:59:15 Self-assembly of TiSi nanowires on TiSi2 thin films by APCVD
DOI:10.1016/j.jallcom.2011.04.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:3 AU: Ren, Zhaodi;Hao, Peng;Du, Jun;Han, Gaorong;Weng, Wenjian;Ma, Ning;Du, Piyi;
10:59:16 ZnO interconnected network nanostructures grown on cracked GaN by the aqueous solution method
DOI:10.1016/j.jallcom.2010.06.129 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Yu, Naisen;Deng, Dongmei;Yang, Dong;Wang, Yong;Yang, Tianpeng;
10:59:17 Controlled crystallite orientation in ZnO nanorods prepared by chemical bath deposition: Effect of H2O2
DOI:10.1016/j.jallcom.2011.04.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:12 AU: Gurav, K. V.;Patil, U. M.;Pawar, S. M.;Kim, J. H.;Lokhande, C. D.;
10:59:18 Electron-Phonon Interaction and Small Polaron Mechanism of Temperature Dependent Resistivity of Zn Nanowires
DOI:10.1166/jctn.2011.1817 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2011
TC:2 AU: Choudhary, K. K.;Prasad, D.;Jayakumar, K.;Varshney, Dinesh;
10:60:1:1 Effect of dopant (Al, Nb, Bi, La) on varistor properties of ZnO-V2O5-MnO2-Co3O4-Dy2O3 ceramics
DOI:10.1016/j.ceramint.2009.12.002 JN:CERAMICS INTERNATIONAL PY:2010
TC:32 AU: Nahm, Choon-W.;
10:60:1:2 Er2O3 Doping Effect on Electrical Properties of ZnO-V2O5-MnO2-Nb2O5 Varistor Ceramics
DOI:10.1111/j.1551-2916.2011.04812.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:11 AU: Nahm, Choon-W.;
10:60:1:3 Sintering effect on electrical properties of ZnO-V2O5-MnO2-Nb2O5 ceramics
DOI:10.1016/j.jallcom.2011.06.065 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Nahm, Choon-W.;
10:60:1:4 Microstructure and electrical characteristics of MnTa-doped ZnO-V2O5-ceramics with sintering
DOI:10.1016/j.jallcom.2010.06.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Nahm, C. -W.;
10:60:1:5 Nb2O5 doping effect on electrical properties of ZnO-V2O5-Mn3O4 varistor ceramics
DOI:10.1016/j.ceramint.2012.02.052 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Nahm, Choon-W.;
10:60:1:6 Clamping characteristics and pulse aging behavior of ZnO-V2O5-Mn3O4 varistor ceramics modified with Nb2O5
DOI:10.1016/j.ceramint.2012.09.052 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Nahm, Choon-W.;
10:60:1:7 Non-ohmic effect and pulse aging behavior of V/Mn/Co/Bi/Dy co-doped ZnO semiconducting varistors with sintering processing
DOI:10.1016/j.mssp.2014.04.035 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Nahm, Choon-W.;
10:60:1:8 Grain growth of ZnO-V2O5 based varistor ceramics with different antimony dopants
DOI:10.1016/j.jeurceramsoc.2011.05.040 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:10 AU: Ming, Zhao;Yu, Shi;Sheng, Tian Chang;
10:60:1:9 Influence of Bi2O3 Doping on Microstructure and Electrical Properties of ZnO-V2O5-MnO2-Nb2O5 Varistor Ceramics
DOI:10.1111/j.1551-2916.2012.05230.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:3 AU: Nahm, Choon-W.;
10:60:1:10 Nonohmic properties of V/Mn/Nb/Gd co-doped zinc oxide semiconducting varistors with low-temperature sintering process
DOI:10.1016/j.mssp.2014.02.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Nahm, Choon-W.;
10:60:1:11 Low-temperature sintering effect on varistor properties of ZnO-V2O5-MnO2-Nb2O5-Bi2O3 ceramics
DOI:10.1016/j.ceramint.2012.07.025 JN:CERAMICS INTERNATIONAL PY:2013
TC:5 AU: Nahm, Choon-W;
10:60:1:12 Sintering Effect on Pulse Aging Behavior of Zn-V-Mn-Co-Nb Varistors
DOI:10.1111/j.1551-2916.2011.04626.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:4 AU: Nahm, Choon-W.;
10:60:1:13 Characteristics of ZnO-V2O5-MnO2-Nb2O5-Er2O3 semiconducting varistors with sintering processing
DOI:10.1016/j.mssp.2012.12.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Nahm, Choon-Woo;
10:60:1:14 Structural and dielectric properties of undoped ZnO pellets prepared by solid state route
DOI:10.1007/s00339-013-8199-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Chaari, Mariem;Matoussi, Adel;
10:60:1:15 Electrical and dielectric characteristics of erbium-added ZnO-V2O5-based varistor ceramics
DOI:10.1016/j.ceramint.2012.05.052 JN:CERAMICS INTERNATIONAL PY:2012
TC:1 AU: Nahm, Choon-Woo;
10:60:1:16 Major effects on electrical properties of ZnO-V2O5-MnO2-Nb2O5 ceramics with small Gd2O3 doping changes
DOI:10.1016/j.jallcom.2013.05.005 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Nahm, Choon-W;
10:60:1:17 Impulse Aging Behavior of ZnO-V2O5-Based Varistors with Nb2O5 Addition
DOI:10.1111/j.1551-2916.2011.04420.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:3 AU: Nahm, Choon-W;
10:60:1:18 Effect of sintering temperature on microstructure and electrical properties of ZVMCDN ceramics
DOI:10.1016/j.matlet.2010.01.030 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Nahm, Choon-W.;
10:60:1:19 Non-ohmic properties and impulse aging behavior of quaternary ZnO-V2O5-Mn3O4-Er2O3 semiconducting varistors with sintering processing
DOI:10.1016/j.mssp.2013.04.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Nahm, Choon-Woo;
10:60:1:20 Interface states and MWS polarization contributions to the dielectric response of low voltage ZnO varistor
DOI:10.1016/j.ceramint.2010.08.036 JN:CERAMICS INTERNATIONAL PY:2011
TC:6 AU: Tsonos, C.;Kanapitsas, A.;Triantis, D.;Anastasiadis, C.;Stavrakas, I.;Pissis, P.;Neagu, E.;
10:60:1:21 Major effects on varistor properties of ZnO-V2O5-MnO2-Nb2O5-Er2O3 ceramics with sintering changes
DOI:10.1016/j.ceramint.2011.10.050 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Nahm, Choon-W;
10:60:2:1 Influence of Fe2O3 doping on microstructural and electrical properties of ZnO-Pr6O11 based varistor ceramic materials
DOI:10.1016/j.jallcom.2010.08.100 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Peng, Zhijian;Fu, Xiuli;Zang, Yanxu;Fu, Zhiqiang;Wang, Chengbiao;Qi, Longhao;Miao, Hezhuo;
10:60:2:2 Microstructure and electrical properties of Y(NO3)(3)center dot 6H(2)O-doped ZnO-Bi2O3-based varistor ceramics
DOI:10.1016/j.jallcom.2011.07.015 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:25 AU: Xu, Dong;Cheng, Xiaonong;Yuan, Hongming;Yang, Juan;Lin, Yuanhua;
10:60:2:3 Effect of SnO2 doping on microstructural and electrical properties of ZnO-Pr6O11 based varistor ceramics
DOI:10.1016/j.jallcom.2011.04.042 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Feng, Hai;Peng, Zhijian;Fu, Xiuli;Fu, Zhiqiang;Wang, Chengbiao;Qi, Longhao;Miao, Hezhuo;
10:60:2:4 Effect of TiO2 doping on microstructural and electrical properties of ZnO-Pr6O11-based varistor ceramics
DOI:10.1016/j.jallcom.2010.03.047 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:15 AU: Feng, Hai;Peng, Zhijian;Fu, Xiuli;Fu, Zhiqiang;Wang, Chengbiao;Qi, Longhao;Miao, Hezhuo;
10:60:2:5 Microstructure and electrical properties of ZnO-V2O5-MnO2-Co3O4-Dy2O3-Nb2O5-based varistors
DOI:10.1016/j.jallcom.2009.11.143 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:12 AU: Nahm, C-W.;
10:60:2:6 Influence of B2O3 additives on microstructure and electrical properties of ZnO-Bi2O3-Sb2O3-based varistors
DOI:10.1016/j.jallcom.2010.10.074 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Liu, Fenghua;Xu, Gaojie;Duan, Lei;Li, Yali;Li, Yong;Cui, Ping;
10:60:2:7 Influence of Dopants on Electrical Properties of ZnO-V2O5 Varistors Deduced from AC Impedance and Variable-Temperature Dielectric Spectroscopy
DOI:10.1007/s11664-012-1935-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:4 AU: Wu, Jun;Li, Taotao;Qi, Ting;Qin, Qingwei;Li, Guangqiang;Zhu, Bailin;Wu, Run;Xie, Changsheng;
10:60:2:8 The Influence of ZnF2 Doping on the Electrical Properties and Microstructure in Bi2O3-ZnO-Based Varistors
DOI:10.1111/j.1551-2916.2009.03386.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:5 AU: Cheng, Lihong;Zheng, Liaoying;Li, Guorong;Yuan, Kaiyang;Gu, Yan;Zhang, Fuping;
10:60:3:1 Electrical behavior against current impulse in ZnO-Pr6O11-based varistor ceramics with terbium addition
DOI:10.1016/j.ceramint.2010.02.027 JN:CERAMICS INTERNATIONAL PY:2010
TC:11 AU: Nahm, Choon-W.;
10:60:3:2 Al doping effect on electrical and dielectric aging behavior against impulse surge in ZPCCYA-based varistors
DOI:10.1016/j.mseb.2010.03.036 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:12 AU: Nahm, Choon-W.;
10:60:3:3 Impulse Aging Behavior Against of Zn-Pr-Co-Cr-Dy Varistors with Cobalt Addition
DOI:10.1111/j.1551-2916.2010.04283.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:5 AU: Nahm, Choon-W.;
10:60:3:4 Sintering Temperature Dependence of Varistor Properties and Aging Behavior in ZnO-Pr6O11-CoO-Cr2O3-Al2O3-Y2O3 Ceramics
DOI:10.1111/j.1551-2916.2010.03713.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:11 AU: Nahm, Choon-W.;
10:60:3:5 Impulse degradation behavior of Co-Cr-Al-Y-doped ZnO-Pr6O11-based varistors with sintering temperature
DOI:10.1016/j.ceramint.2010.09.017 JN:CERAMICS INTERNATIONAL PY:2011
TC:2 AU: Nahm, Choon-W.;
10:60:3:6 Degradation behavior against surge stress of Zn-Pr-Co-Cr-Y-Er varistor ceramics modified with Er2O3
DOI:10.1016/j.ceramint.2011.12.063 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Nahm, Choon-W.;
10:60:3:7 Pulse aging behavior of ZnO-Pr6O11-CoO-Cr2O3-Dy2O3 varistor ceramics with sintering time
DOI:10.1016/j.ceramint.2011.01.011 JN:CERAMICS INTERNATIONAL PY:2011
TC:6 AU: Nahm, Choon-W.;
10:60:3:8 Major Effects on Impulse Aging Behavior of ZnO-Pr6O11-CoO-Cr2O3-Er2O3 Varistor Ceramics with Small Sintering Changes
DOI:10.1111/j.1551-2916.2010.04027.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:2 AU: Nahm, Choon-W.;
10:60:3:9 Sintering time dependence of varistor properties and aging behavior in Co/Cr/La/Y co-doped ZnO-PrO1.83-based ceramics
DOI:10.1016/j.ceramint.2014.03.164 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Nahm, Choon-W.;
10:60:3:10 Novel pulse ageing characteristics of ZPCCE varistor ceramics
DOI:10.1016/j.ceramint.2011.06.015 JN:CERAMICS INTERNATIONAL PY:2011
TC:1 AU: Nahm, Choon-W.;
10:60:3:11 Microstructure and varistor properties of Y2O3-doped ZnO-Pr6O11-CoO-Cr2O3-La2O3 ceramics
DOI:10.1016/j.ceramint.2013.07.007 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Nahm, Choon-W.;
10:60:3:12 Highly stable nonlinear behavior against impulse current of ZnO-Pr6O11-CoO-Cr2O3-Y2O3 varistors
DOI:10.1016/j.matlet.2010.08.042 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Nahm, Choon-W;
10:60:3:13 Excellent DC aging behavior of ZnO-Pr O-6(11)-CoO-Cr2O3-Y2O3 ceramics modified with Tb4O7
DOI:10.1016/j.ceramint.2012.11.009 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Nahm, Choon-W.;
10:60:3:14 Er2O3 Doping Effect on Varistor Properties and Multiimpulse Stress Behavior of ZnO-PrO1.83-CoO-Cr2O3-Dy2O3 Ceramics
DOI:10.1111/jace.12548 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:0 AU: Nahm, Choon W.;
10:60:3:15 Microstructure, electrical properties, and aging behavior of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-Er2O3 varistor ceramics
DOI:10.1016/j.ceramint.2011.05.032 JN:CERAMICS INTERNATIONAL PY:2011
TC:6 AU: Nahm, Choon-W.;
10:60:4:1 Densification and grain growth of CuO-doped Pr6O11 varistors
DOI:10.1016/j.ceramint.2010.02.028 JN:CERAMICS INTERNATIONAL PY:2010
TC:4 AU: Li, T. Y.;Wang, H. Q.;Hua, Z. Q.;Dong, L.;Zhao, H. W.;Wang, Y.;
10:60:4:2 Microstructure and Electrical Properties in Low- Sb2O3-Doped Pr6O11 Ceramics
DOI:10.1111/j.1551-2916.2012.05260.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:2 AU: Peng, Shujie;Wang, Yu;Wang, Haiqing;Dong, Xiang;Dong, Liang;Gan, Yingjie;
10:61:1 Magnetism in C- or N-doped MgO and ZnO: A Density-Functional Study of Impurity Pairs
DOI:10.1103/PhysRevLett.105.267203 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:47 AU: Wu, Hua;Stroppa, Alessandro;Sakong, Sung;Picozzi, Silvia;Scheffler, Matthias;Kratzer, Peter;
10:61:2 Origin of d(0) magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
DOI:10.1103/PhysRevB.81.125211 JN:PHYSICAL REVIEW B PY:2010
TC:52 AU: Yang, Kesong;Wu, Rongqin;Shen, Lei;Feng, Yuan Ping;Dai, Ying;Huang, Baibiao;
10:61:3 Defect-induced magnetism in nitride and oxide nanowires: Surface effects and quantum confinement
DOI:10.1103/PhysRevB.82.165319 JN:PHYSICAL REVIEW B PY:2010
TC:19 AU: Dev, Pratibha;Zeng, Hao;Zhang, Peihong;
10:61:4 Unconventional magnetism in semiconductors: Role of localized acceptor states
DOI:10.1103/PhysRevB.81.085207 JN:PHYSICAL REVIEW B PY:2010
TC:23 AU: Dev, Pratibha;Zhang, Peihong;
10:61:5 Can cation vacancy defects induce room temperature ferromagnetism in GaN?
DOI:10.1063/1.4792528 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Wang, Xiaopeng;Zhao, Mingwen;He, Tao;Wang, Zhenhai;Liu, Xiangdong;
10:61:6 High-spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO, and BeO: A first-principles study
DOI:10.1103/PhysRevB.83.205205 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Volnianska, O.;Boguslawski, P.;
10:61:7 Anisotropic ferromagnetism in carbon-doped zinc oxide from first-principles studies
DOI:10.1103/PhysRevB.86.054441 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Nayak, Sanjeev K.;Gruner, Markus E.;Sakong, Sung;Sil, Shreekantha;Kratzer, Peter;Behera, Surjyo N.;Entel, Peter;
10:61:8 First-principles analysis of ferromagnetism in hexagonal and rhombohedral BN
DOI:10.1016/j.jmmm.2013.04.068 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:0 AU: Han, Ruilin;Yang, Hui;Yang, Baishun;Du, Xiaobo;Yan, Yu;Jin, Hanmin;
10:61:9 Ferromagnetic Spin Coupling of 2p Impurities in Band Insulators Stabilized by an Intersite Coulomb Interaction: Nitrogen-Doped MgO
DOI:10.1103/PhysRevLett.107.137203 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:25 AU: Slipukhina, I.;Mavropoulos, Ph.;Bluegel, S.;Lezaic, M.;
10:61:10 Magnetism in undoped ZnS studied from density functional theory
DOI:10.1063/1.4881501 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Xiao, Wen-Zhi;Wang, Ling-ling;Rong, Qing-Yan;Xiao, Gang;Meng, Bo;
10:61:11 Nonconventional magnetism in pristine and alkali doped In2O3: Density functional study
DOI:10.1063/1.3504615 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Guan, L. X.;Tao, J. G.;Huan, C. H. A.;Kuo, J. L.;Wang, L.;
10:61:12 Vacancy complexes induce long-range ferromagnetism in GaN
DOI:10.1063/1.4901458 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhang, Zhenkui;Schwingenschloegl, Udo;Roqan, Iman S.;
10:61:13 Possible ferromagnetism in Li, Na and K-doped AlN: A first-principle study
DOI:10.1016/j.jmmm.2012.08.026 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:3 AU: Han, Ruilin;Yuan, Wei;Yang, Hui;Du, Xiaobo;Yan, Yu;Jin, Hanmin;
10:61:14 Catalytic growth of N-doped MgO on Mo(001)
DOI:10.1103/PhysRevB.86.075455 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Grob, Martin;Pratzer, Marco;Morgenstern, Markus;Lezaic, Marjana;
10:61:15 Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
DOI:10.1063/1.3654151 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Roul, Basanta;Rajpalke, Mohana K.;Bhat, Thirumaleshwara N.;Kumar, Mahesh;Kalghatgi, A. T.;Krupanidhi, S. B.;Kumar, Nitesh;Sundaresan, A.;
10:61:16 Weak d(0) magnetism in C and N doped ZnO
DOI:10.1063/1.3669491 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Pham, Anh;Assadi, M. H. N.;Zhang, Y. B.;Yu, A. B.;Li, S.;
10:61:17 Magnetic properties of ZnS doped with noble metals (X=Ru, Rh, Pd, and Ag)
DOI:10.1063/1.4772645 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Tan, Zhiyun;Xiao, Wenzhi;Wang, Lingling;Yang, Youchang;
10:61:18 Magnetically active vacancy related defects in irradiated GaN layers
DOI:10.1063/1.4745776 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Kilanski, L.;Tuomisto, F.;Szymczak, R.;Kruszka, R.;
10:61:19 Modulating magnetism of ZnO:C with vacancy and substitution
DOI:10.1063/1.3666051 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Li, W. Q.;Cao, J. X.;Ding, J. W.;Hu, Xuedong;
10:61:20 Effect of oxygen and zinc vacancies in ferromagnetic C-doped ZnO: Density-functional calculations
DOI:10.1016/j.jmmm.2013.11.015 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:1 AU: Fang, D. Q.;Zhang, R. Q.;Zhang, Y.;Zhang, S. L.;
10:61:21 Is N-doped SrO magnetic? A first-principles view
DOI:10.1063/1.3680087 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Wu, Hua;
10:61:22 Structural, electronic, and magnetic properties of C-doped GaN nanoribbon
DOI:10.1063/1.3587161 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Zheng, Fang-Ling;Zhang, Yan;Zhang, Jian-Min;Xu, Ke-Wei;
10:61:23 Monte Carlo simulation of magnetic phase transitions in Mn-doped ZnO
DOI:10.1016/j.jmmm.2011.06.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:0 AU: Drissi, L. B.;Benyoussef, A.;Saidi, E. H.;Bousmina, M.;
10:61:24 Mn-doped cubic BN as an atomiclike memory device: A density functional study
DOI:10.1103/PhysRevB.81.195432 JN:PHYSICAL REVIEW B PY:2010
TC:1 AU: da Silva, Antonio J. R.;Piquini, P.;Arantes, J. T.;Baierle, R. J.;Fazzio, A.;
10:62:1 Synthesis, characterization and photocatalytic activity of annealing dependent quasi spherical and capsule like ZnO nanostructures
DOI:10.1016/j.apsusc.2014.07.050 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Pudukudy, Manoj;Hetieqa, Ain;Yaakob, Zahira;
10:62:2 Alkali-dependent synthesis of flower-like ZnO structures with enhanced photocatalytic activity via a facile hydrothermal method
DOI:10.1016/j.apsusc.2012.02.034 JN:APPLIED SURFACE SCIENCE PY:2012
TC:30 AU: Sun, Lin;Shao, Rong;Chen, Zhidong;Tang, Lanqin;Dai, Yong;Ding, Jianfei;
10:62:3 Microwave-assisted hydrothermal synthesis of ZnO rod-assembled microspheres and their photocatalytic performances
DOI:10.1016/j.apt.2010.07.002 JN:ADVANCED POWDER TECHNOLOGY PY:2011
TC:40 AU: Zhu, Zhenfeng;Yang, Dong;Liu, Hui;
10:62:4 Facile solid state synthesis of ZnO hexagonal nanogranules with excellent photocatalytic activity
DOI:10.1016/j.apsusc.2013.12.004 JN:APPLIED SURFACE SCIENCE PY:2014
TC:13 AU: Pudukudy, Manoj;Yaakob, Zahira;
10:62:5 A comparative study on plate-like and flower-like ZnO nanocrystals surface photovoltage property and photocatalytic activity
DOI:10.1016/j.matchemphys.2011.04.004 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:36 AU: Lu, Yongchun;Wang, Lingling;Wang, Dejun;Xie, Tengfeng;Chen, Liping;Lin, Yanhong;
10:62:6 Sol-gel assisted hydrothermal synthesis of ZnO microstructures: Morphology control and photocatalytic activity
DOI:10.1016/j.apt.2013.06.004 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:9 AU: Zhao, Xiaohua;Li, Meng;Lou, Xiangdong;
10:62:7 Sol - gel-based hydrothermal method for the synthesis of 3D flower-like ZnO microstructures composed of nanosheets for photocatalytic applications
DOI:10.1016/j.ceramint.2013.10.140 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Zhao, Xiaohua;Lou, Feijian;Li, Meng;Lou, Xiangdong;Li, Zhenzhen;Zhou, Jianguo;
10:62:8 ZnO architectures synthesized by a microwave-assisted hydrothermal method and their photoluminescence properties
DOI:10.1016/j.ssi.2010.03.013 JN:SOLID STATE IONICS PY:2010
TC:33 AU: de Moura, A. P.;Lima, R. C.;Moreira, M. L.;Volanti, D. P.;Espinosa, J. W. M.;Orlandi, M. O.;Pizani, P. S.;Varela, J. A.;Longo, E.;
10:62:9 A CTAB-assisted hydrothermal and solvothermal synthesis of ZnO nanopowders
DOI:10.1016/j.ceramint.2011.04.134 JN:CERAMICS INTERNATIONAL PY:2011
TC:28 AU: Wang, Yan-Xiang;Sun, Jian;Fan, XueYun;Yu, Xi;
10:62:10 Photoluminescence emission at room temperature in zinc oxide nano-columns
DOI:10.1016/j.materresbull.2013.09.049 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Rocha, L. S. R.;Deus, R. C.;Foschini, C. R.;Moura, F.;Garcia, F. Gonzalez;Simoes, A. Z.;
10:62:11 Surfactant free microwave assisted synthesis of ZnO microspheres: Study of their antibacterial activity
DOI:10.1016/j.apsusc.2014.04.064 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Shinde, Vidula V.;Dalavi, Dhanaji S.;Mali, Sawanta S.;Hong, Chang K.;Kim, Jin H.;Patil, Pramod S.;
10:62:12 Controlled synthesis of zinc oxide nanoflowers by succinate-assisted hydrothermal route and their morphology-dependent photocatalytic performance
DOI:10.1016/j.mssp.2014.06.040 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Adhyapak, Parag V.;Meshram, Satish P.;Mulla, Imtiaz S.;Pardeshi, Satish K.;Amalnerkar, Dinesh P.;
10:62:13 Effect of preparation parameters on the morphologically induced photocatalytic activities of hierarchical zinc oxide nanostructures
DOI:10.1016/j.ceramint.2013.02.076 JN:CERAMICS INTERNATIONAL PY:2013
TC:5 AU: Adhyapak, Parag V.;Meshram, Satish P.;Tomar, Vijaykumar;Amalnerkar, Dinesh P.;Mulla, Imtiaz S.;
10:62:14 Optical and Photocatalytic Properties of Single Crystalline ZnO at the Air-Liquid Interface by an Aminolytic Reaction
DOI:10.1021/la203006n JN:LANGMUIR PY:2011
TC:7 AU: Vaishampayan, Mukta V.;Mulla, I. S.;Joshi, Satyawati S.;
10:62:15 The effect of H2O and PEG on the morphologies of ZnO nanostructures synthesized under microwave radiation
DOI:10.1016/j.jallcom.2009.11.033 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:12 AU: Thongtem, Titipun;Jattukul, Siriprapha;Phuruangrat, Anukorn;Thongtem, Somchai;
10:62:16 ZnO micro and nanocrystals with enhanced visible light absorption
DOI:10.1016/j.mseb.2012.05.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:7 AU: Stankovic, Ana;Stojanovic, Zoran;Veselinovic, Ljiljana;Skapin, Sreco Davor;Bracko, Ines;Markovic, Smilja;Uskokovic, Dragan;
10:62:17 Bulk synthesis of ZnO nanoparticles by the one-step electromagnetic levitational gas condensation method
DOI:10.1016/j.ceramint.2012.04.038 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Vaghayenegar, M.;Kermanpur, A.;Abbasi, M. H.;
10:62:18 Low temperature pH dependent synthesis of flower-like ZnO nanostructures with enhanced photocatalytic activity
DOI:10.1016/j.materresbull.2010.11.007 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:9 AU: Vaishampayan, Mukta V.;Mulla, Imtiaz S.;Joshi, Satyawati S.;
10:62:19 Structurally enhanced photocatalytic activity of flower-like ZnO synthesized by PEG-assited hydrothermal route
DOI:10.1016/j.ceramint.2013.07.104 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Adhyapak, Parag V.;Meshram, Satish P.;Amalnerkar, Dinesh P.;Mulla, Imtiaz S.;
10:62:20 DC-field-induced synthesis of ZnO nanowhiskers in water-in-oil microemulsions
DOI:10.1016/j.ceramint.2010.08.037 JN:CERAMICS INTERNATIONAL PY:2011
TC:9 AU: Lu, Hongxia;Yu, Xijun;Zeng, Zhaohuan;Chen, Deliang;Bao, Ke;Zhang, Liwei;Wang, Hailong;Xu, Hongliang;Zhang, Rui;
10:62:21 Rapid synthesis of ZnO nanostructures through microwave heating process
DOI:10.1016/j.ceramint.2012.07.043 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Bu, Ian Y. Y.;
10:62:22 Synthesis and characterization of nitrogen doped ZnO tetrapods and application in photocatalytic degradation of organic pollutants under visible light
DOI:10.1016/j.matlet.2013.02.087 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Qiu, Yongfu;Yang, Minlin;Fan, Hongbo;Xu, Yongjun;Shao, Youyuan;Yang, Xiaoxi;Yang, Shihe;
10:62:23 Structural, optical, and adsorptive properties of tantalates by a facile hydrothermal method
DOI:10.1063/1.4821340 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Liu, M.;Ma, R.;Fang, M.;Li, F. D.;Kang, S. H.;Wang, H. M.;Fei, G. T.;Zhang, L. D.;
10:62:24 Microwave-assisted synthesis of hexagonal structure ZnO micro-tubes
DOI:10.1016/j.matlet.2012.05.012 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Jiang, Qiuping;Liu, Yongju;Kan, Huen;Yuan, Bo;Zhao, Heyun;
10:62:25 Graphene sheets anchored with ZnO nanocrystals as electrode materials for electrochemical capacitors
DOI:10.1016/j.matchemphys.2013.10.024 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:7 AU: Hsieh, Chien-Te;Lin, Jiun-Sheng;Chen, Yu-Fu;Lin, Chi-Yuan;Li, Wen-Yen;
10:62:26 Effects of process parameters on synthesis of Zn ultrafine/nanoparticles by electromagnetic levitational gas condensation
DOI:10.1016/j.apt.2010.02.009 JN:ADVANCED POWDER TECHNOLOGY PY:2010
TC:9 AU: Vaghayenegar, M.;Kermanpur, A.;Abbasi, M. H.;Yazdabadi, H. Ghasemi;
10:62:27 Study of defect creation in self assembled ZnO nanostructures with electrically charged nanoparticles
DOI:10.1016/j.apsusc.2012.10.078 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Dwivedi, Charu;Dutta, V.;
10:62:28 Effect of nitrogen doping on the photo-catalytic properties of nitrogen doped ZnO tetrapods
DOI:10.1016/j.matlet.2014.05.156 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Qiu, Yongfu;Fan, Hongbo;Tan, Guiping;Yang, Minlin;Yang, Xiaoxi;Yang, Shihe;
10:62:29 Facile synthesis of snowflake-like ZnO nanostructures at low temperature and their super catalytic activity for the ozone decomposition
DOI:10.1016/j.materresbull.2012.11.095 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:4 AU: Xu, ZhenZhen;Ben, Yue;Chen, ZhongLin;Qi, Fei;
10:63:1 Hollow Urchin-like ZnO thin Films by Electrochemical Deposition
DOI:10.1002/adma.200903098 JN:ADVANCED MATERIALS PY:2010
TC:116 AU: Elias, Jamil;Levy-Clement, Claude;Bechelany, Mikhael;Michler, Johann;Wang, Guillaume-Yangshu;Wang, Zhao;Philippe, Laetitia;
10:63:2 Simple Synthetic Route for SERS-Active Gold Nanoparticles Substrate with Controlled Shape and Organization
DOI:10.1021/la1016356 JN:LANGMUIR PY:2010
TC:37 AU: Bechelany, Mikhael;Brodard, Pierre;Elias, Jamil;Brioude, Arnaud;Michler, Johann;Philippe, Laetitia;
10:63:3 Depth-sensing indentation of nanomaterials and nanostructures
DOI:10.1016/j.matchar.2013.01.009 JN:MATERIALS CHARACTERIZATION PY:2013
TC:10 AU: Palacio, Manuel L. B.;Bhushan, Bharat;
10:63:4 ZnO nanotubes by template-assisted sol-gel route
DOI:10.1007/s11051-012-0980-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:17 AU: Bechelany, Mikhael;Amin, Amin;Brioude, Arnaud;Cornu, David;Miele, Philippe;
10:63:5 Compression of freestanding gold nanostructures: from stochastic yield to predictable flow
DOI:10.1088/0957-4484/21/5/055701 JN:NANOTECHNOLOGY PY:2010
TC:31 AU: Mook, W. M.;Niederberger, C.;Bechelany, M.;Philippe, L.;Michler, J.;
10:63:6 Adhesion Control for Micro- and Nanomanipulation
DOI:10.1021/nn200658z JN:ACS NANO PY:2011
TC:12 AU: Dejeu, Jerome;Bechelany, Mikhael;Rougeot, Patrick;Philippe, Laetitia;Gauthier, Michael;
10:63:7 Nanocrystalline-to-amorphous transition in nanolaminates grown by low temperature atomic layer deposition and related mechanical properties
DOI:10.1063/1.4711767 JN:APPLIED PHYSICS LETTERS PY:2012
TC:17 AU: Raghavan, R.;Bechelany, M.;Parlinska, M.;Frey, D.;Mook, W. M.;Beyer, A.;Michler, J.;Utke, I.;
10:63:8 Reducing the Adhesion between Surfaces Using Surface Structuring with PS Latex Particle
DOI:10.1021/am100156c JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:15 AU: Dejeu, Jerome;Bechelany, Mikhael;Philippe, Laetitia;Rougeot, Patrick;Michler, Johann;Gauthier, Michael;
10:63:9 Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.07.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:15 AU: Lerose, Damiana;Bechelany, Mikhael;Philippe, Laetitia;Michler, Johann;Christiansen, Silke;
10:63:10 Nanowires with controlled porosity for hydrogen production
DOI:10.1039/c2ta00794k JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:11 AU: Bechelany, Mikhael;Abou Chaaya, Adib;Frances, Fabien;Akdim, Ouardia;Cot, Didier;Demirci, Umit B.;Miele, Philippe;
10:63:11 Urchin-inspired zinc oxide as building blocks for nanostructured solar cells
DOI:10.1016/j.nanoen.2012.07.002 JN:NANO ENERGY PY:2012
TC:26 AU: Elias, Jamil;Bechelany, Mikhael;Utke, Ivo;Erni, Rolf;Hosseini, Davood;Michler, Johann;Philippe, Laetitia;
10:63:12 Self-assembly epitaxial growth of nanorods on nanowalls in hierarchical ZnO hexagonal nanocastle
DOI:10.1007/s11051-013-2142-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Chen, Chenlong;Yan, Tao;Chou, Mitch M. C.;Lee, Chun-Yu;Wang, Bang-Min;Wen, Meng-Jie;Zhang, Xingwang;
10:63:13 The SL-assisted synthesis of hierarchical ZnO nanostructures and their enhanced photocatalytic activity
DOI:10.1007/s11051-013-1725-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:6 AU: Miao, Ting-Ting;Guo, Yuan-Ru;Pan, Qing-Jiang;
10:63:14 In situ electron backscatter diffraction (EBSD) during the compression of micropillars
DOI:10.1016/j.msea.2010.03.055 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:15 AU: Niederberger, C.;Mook, W. M.;Maeder, X.;Michler, J.;
10:63:15 Investigating the nanostructured gold thin films using the multifractal analysis
DOI:10.1007/s00339-014-8636-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Yadav, R. P.;Singh, U. B.;Mittal, A. K.;Dwivedi, S.;
10:63:16 Compression of Nanowires Using a Flat Indenter: Diametrical Elasticity Measurement
DOI:10.1021/nl300103z JN:NANO LETTERS PY:2012
TC:7 AU: Wang, Zhao;Mook, William M.;Niederberger, Christoph;Ghisleni, Rudy;Philippe, Laetitia;Michler, Johann;
10:63:17 Quantitative stress/strain mapping during micropillar compression
DOI:10.1080/14786435.2010.505178 JN:PHILOSOPHICAL MAGAZINE PY:2011
TC:5 AU: Maeder, X.;Mook, W. M.;Niederberger, C.;Michler, J.;
10:63:18 Sensitivity Gains in Chemosensing by Optical and Structural Modulation of Ordered Assembly Arrays of ZnO Nanorods
DOI:10.1021/nn103211d JN:ACS NANO PY:2011
TC:8 AU: Zhu, Defeng;He, Qingguo;Chen, Qing;Fu, Yanyan;He, Chao;Shi, Liqi;Meng, Xin;Deng, Changmin;Cao, Huimin;Cheng, Jiangong;
10:63:19 High performance aniline vapor detection based on multi-branched fluorescent triphenylamine-benzothiadiazole derivatives: branch effect and aggregation control of the sensing performance
DOI:10.1039/c2jm30933e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:21 AU: Shi, Liqi;He, Chao;Zhu, Defeng;He, Qingguo;Li, Yang;Chen, Yan;Sun, Yuxi;Fu, Yanyan;Wen, Dan;Cao, Huimin;Cheng, Jiangong;
10:63:20 Electrodeposition of amorphous silicon in non-oxygenated organic solvent
DOI:10.1016/j.tsf.2011.09.026 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Bechelany, Mikhael;Elias, Jamil;Brodard, Pierre;Michler, Johann;Philippe, Laetitia;
10:63:21 Suppression of CuS phases in CuInS2 electrodeposition and sulfurization with heat treatment
DOI:10.1016/j.tsf.2012.06.013 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Yeh, Yih-Min;Chen, Hsiang;Wang, Chau-le;Liao, Chuan Hao;
10:63:22 Scaling law analysis of paraffin thin films on different surfaces
DOI:10.1063/1.3280009 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Dotto, M. E. R.;Camargo, S. S., Jr.;
10:63:23 Synthesis of WS2 nanostructures from the reaction of WO3 with CS2 and mechanical characterization of WS2 nanotube composites
DOI:10.1088/0957-4484/22/28/285714 JN:NANOTECHNOLOGY PY:2011
TC:4 AU: Tehrani, M.;Luhrs, C. C.;Al-Haik, M. S.;Trevino, J.;Zea, H.;
10:63:24 Electrodeposition of gold thin films with controlled morphologies and their applications in electrocatalysis and SERS
DOI:10.1088/0957-4484/23/25/255705 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Elias, Jamil;Gizowska, Magdalena;Brodard, Pierre;Widmer, Roland;deHazan, Yoram;Graule, Thomas;Michler, Johann;Philippe, Laetitia;
10:63:25 The influence of sputtering procedure on nanoindentation and nanoscratch behaviour of W-S-C film
DOI:10.1016/j.apsusc.2010.04.100 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Roy, Manish;Koch, T.;Pauschitz, A.;
10:63:26 Electrodeposition of ZnO nanorods on opaline replica as hierarchically structured systems
DOI:10.1039/c0jm02759f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:1 AU: Steidl, Lorenz;Frank, Stefan;Weber, Stefan A. L.;Panthoefer, Martin;Birkel, Alexander;Koll, Dominik;Berger, Ruediger;Tremel, Wolfgang;Zentel, Rudolf;
10:64:1 Rectification and barrier height inhomogeneous in Rhodamine B based organic Schottky diode
DOI:10.1016/j.synthmet.2010.10.030 JN:SYNTHETIC METALS PY:2011
TC:40 AU: Farag, A. A. M.;Yahia, I. S.;
10:64:2 Study of barrier inhomogeneities in I-V-T and C-V-T characteristics of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode
DOI:10.1063/1.4737589 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Sharma, Mamta;Tripathi, S. K.;
10:64:3 The effects of temperature, radiation, and illumination on current-voltage characteristics of Au/PVA(Co, Zn-doped)/n-Si Schottky diodes
DOI:10.1002/app.36327 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:3 AU: Dokme, Ilbilge;Altindal, Semsettin;Uslu, Ibrahim;
10:64:4 Anomalous Peak in the Forward-Bias C-V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures
DOI:10.1007/s11664-010-1440-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:22 AU: Tunc, Tuncay;Altindal, Semsettin;Dokme, Ilbilge;Uslu, Habibe;
10:64:5 The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures
DOI:10.1063/1.3554479 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:22 AU: Altindal, Semsettin;Uslu, Habibe;
10:64:6 Analysis of the forward and reverse bias I-V and C-V characteristics on Al/PVA:n-PbSe polymer nanocomposites Schottky diode
DOI:10.1063/1.3698773 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Tripathi, S. K.;Sharma, Mamta;
10:64:7 Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures
DOI:10.1007/s00339-013-7552-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:10 AU: Sharma, Mamta;Tripathi, S. K.;
10:64:8 Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes
DOI:10.1063/1.3462427 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Bulbul, M. M.;Bengi, S.;Dokme, I.;Altindal, S.;Tunc, T.;
10:64:9 The Illumination Intensity and Applied Bias Voltage on Dielectric Properties of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes
DOI:10.1002/app.33131 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:13 AU: Uslu, Habibe;Altindal, Semsettin;Tunc, Tuncay;Uslu, Ibrahim;Mammadov, Tofig S.;
10:64:10 The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
DOI:10.1016/j.synthmet.2011.01.002 JN:SYNTHETIC METALS PY:2011
TC:16 AU: Dokme, Ilbilge;Tunc, T.;Uslu, I.;Altindal, S.;
10:64:11 Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer
DOI:10.1007/s00339-012-7087-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Tunc, T.;Gokcen, M.;Uslu, I.;
10:64:12 Electrical properties and conduction mechanism of an organic-modified Au/NiPc/n-InP Schottky barrier diode
DOI:10.1007/s00339-014-8238-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Reddy, V. Rajagopal;
10:64:13 The Effect of Gamma Irradiation on Electrical Characteristics of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes
DOI:10.1002/app.32450 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:11 AU: Tascioglu, I.;Uslu, H.;Altindal, S.;Durmus, P.;Dokme, I.;Tunc, T.;
10:64:14 Temperature-dependent barrier height in CdSe Schottky diode
DOI:10.1007/s10853-010-4601-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:22 AU: Tripathi, S. K.;
10:64:15 Controlling of silicon-insulator-metal junction by organic semiconductor polymer thin film
DOI:10.1016/j.synthmet.2010.05.024 JN:SYNTHETIC METALS PY:2010
TC:21 AU: Yakuphanoglu, Fahrettin;
10:64:16 Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure
DOI:10.1016/j.tsf.2012.04.020 JN:THIN SOLID FILMS PY:2012
TC:14 AU: Reddy, V. Rajagopal;Reddy, M. Siva Pratap;Kumar, A. Ashok;Choi, Chel-Jong;
10:64:17 Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level
DOI:10.1016/j.mssp.2014.05.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Altindal, S.;Tunc, T.;Tecimer, H.;Yucedag, I.;
10:64:18 Illumination effect on electrical characteristics of organic-based Schottky barrier diodes
DOI:10.1063/1.3504598 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Uslu, Habibe;Altindal, Semsettin;Dokme, Ilbilge;
10:64:19 About the determination of the Schottky barrier height with the C-V method
DOI:10.1063/1.3561372 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Bozhkov, V. G.;Torkhov, N. A.;Shmargunov, A. V.;
10:64:20 Electrical Properties and the Role of Inhomogeneities at the Polyvinyl Alcohol/n-InP Schottky Barrier Interface
DOI:10.1002/app.39773 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:1 AU: Reddy, M. Siva Pratap;Kang, Hee-Sung;Lee, Jung-Hee;Reddy, V. Rajagopal;Jang, Ja-Soon;
10:64:21 Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
DOI:10.1016/j.mssp.2011.01.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:15 AU: Tunc, Tuncay;Altindal, Semsettin;Uslu, Ibrahim;Dokme, Ilbilge;Uslu, Habibe;
10:64:22 Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
DOI:10.1016/j.tsf.2014.01.036 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Reddy, V. Rajagopal;
10:64:23 Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range
DOI:10.1016/j.jallcom.2011.01.183 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Soylu, M.;Abay, B.;Onganer, Y.;
10:64:24 Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode
DOI:10.1007/s11664-013-2592-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:5 AU: Reddy, V. Rajagopal;Umapathi, A.;Naik, S. Sankar;
10:64:25 Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J-V and C-V characteristics
DOI:10.1016/j.synthmet.2011.03.019 JN:SYNTHETIC METALS PY:2011
TC:7 AU: Osiris, W. G.;Farag, A. A. M.;Yahia, I. S.;
10:64:26 Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature
DOI:10.1007/s00339-013-7605-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Demirezen, Selcuk;
10:64:27 Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
DOI:10.1016/j.tsf.2011.09.043 JN:THIN SOLID FILMS PY:2012
TC:16 AU: Gullu, O.;Aydogan, S.;Turut, A.;
10:64:28 Electrical characteristics of beta-Ga2O3 thin films grown by PEALD
DOI:10.1016/j.jallcom.2014.01.029 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Altuntas, Halit;Donmez, Inci;Ozgit-Akgun, Cagla;Biyikli, Necmi;
10:64:29 n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties
DOI:10.1116/1.3377141 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:5 AU: Gullu, O.;Turut, A.;
10:64:30 Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current-voltage-temperature measurements
DOI:10.1016/j.mssp.2014.05.043 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Hamdaoui, N.;Ajjel, R.;Salem, B.;Gendry, M.;
10:64:31 Electrical and interfacial properties of Au/P3HT:PCBM/n-Si Schottky barrier diodes at room temperature
DOI:10.1016/j.mssp.2014.04.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Ozmen, O. Tuzun;Yaglioglu, E.;
10:64:32 Double barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based organic Schottky diode
DOI:10.1016/j.synthmet.2013.07.029 JN:SYNTHETIC METALS PY:2013
TC:1 AU: Baris, Behzad;Yuksel, Omer Faruk;Tugluoglu, Nihat;Karadeniz, Serdar;
10:64:33 Rectifying properties of TIPS-pentacene:rhodamine blend organic semiconductor-on-p-silicon diodes
DOI:10.1016/j.synthmet.2014.03.007 JN:SYNTHETIC METALS PY:2014
TC:1 AU: Hendi, A. A.;Al Orainy, R. H.;
10:64:34 Schottky barrier height extraction from forward current-voltage characteristics of non-ideal diodes with high series resistance
DOI:10.1063/1.4789989 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Ahmed, Khaled;Chiang, Tony;
10:64:35 Negative Dielectric Constant and Electrical Conductivity of Au/n-Si (111) Schottky Barrier Diodes with PVA/Ni,Zn Interfacial Layer
DOI:10.1002/app.34029 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:2 AU: Tunc, T.;Dokme, I.;Altindal, S.;Uslu, I.;
10:64:36 Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes
DOI:10.1016/j.mssp.2012.09.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:7 AU: Korucu, D.;Turut, A.;Turan, R.;Altindal, S.;
10:64:37 A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer
DOI:10.1016/j.mssp.2014.03.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Kaya, A.;Yucedag, I.;Tecimer, H.;Altindal, S.;
10:64:38 Alpha-sexthiophene/n(-) Si heterojunction diodes and solar cells investigated by I-V and C-V measurements
DOI:10.1016/j.synthmet.2011.10.021 JN:SYNTHETIC METALS PY:2012
TC:3 AU: Takanashi, Y.;Oyama, N.;Momiyama, K.;Kimura, Y.;Niwano, M.;Hirose, F.;
10:64:39 Two Gaussian distributions of the barrier height in chemical vapor deposition diamond/silicon junctions over a wide temperature range
DOI:10.1016/j.tsf.2010.10.003 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Rodrigues, A. M.;
10:64:40 Analysis of current-voltage and capacitance-voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer
DOI:10.1016/j.tsf.2011.04.011 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Aldemir, Durmus Ali;Esen, Mustafa;Kokce, Ali;Karatas, Selda;Ozdemir, Ahmet Faruk;
10:65:1 Nitrogen is a deep acceptor in ZnO
DOI:10.1063/1.3582819 JN:AIP ADVANCES PY:2011
TC:56 AU: Tarun, M. C.;Iqbal, M. Zafar;McCluskey, M. D.;
10:65:2 Generalized Koopmans density functional calculations reveal the deep acceptor state of N-O in ZnO
DOI:10.1103/PhysRevB.81.205209 JN:PHYSICAL REVIEW B PY:2010
TC:46 AU: Lany, Stephan;Zunger, Alex;
10:65:3 p-Type Conductivity in N-Doped ZnO: The Role of the N-Zn-V-O Complex
DOI:10.1103/PhysRevLett.108.215501 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:26 AU: Liu, Lei;Xu, Jilian;Wang, Dandan;Jiang, Mingming;Wang, Shuangpeng;Li, Binghui;Zhang, Zhenzhong;Zhao, Dongxu;Shan, Chong-Xin;Yao, Bin;Shen, D. Z.;
10:65:4 Defects in N, O and N, Zn implanted ZnO bulk crystals
DOI:10.1063/1.4795261 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:9 AU: Stehr, J. E.;Wang, X. J.;Filippov, S.;Pearton, S. J.;Ivanov, I. G.;Chen, W. M.;Buyanova, I. A.;
10:65:5 Photoluminescence study of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy
DOI:10.1007/s00339-014-8576-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Morshed, Muhammad M.;Zuo, Zheng;Huang, Jian;Zheng, Jian-Guo;Lin, Qiyin;Yan, Xiaoqing;Liu, Jianlin;
10:65:6 Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy
DOI:10.1063/1.4866662 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Kurtz, A.;Hierro, A.;Munoz, E.;Mohanta, S. K.;Nakamura, A.;
10:65:7 Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen
DOI:10.1063/1.4751857 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Muret, Pierre;Tainoff, Dimitri;Morhain, Christian;Chauveau, Jean-Michel;
10:65:8 Effect of nitrogen impurities on the physical properties of ZnO nanowires: First-principles study
DOI:10.1103/PhysRevB.85.165207 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Haffad, Slimane;Samah, Madani;Cicero, Giancarlo;
10:65:9 Acceptors in ZnO nanocrystals
DOI:10.1063/1.3598411 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Teklemichael, S. T.;Oo, W. M. Hlaing;McCluskey, M. D.;Walter, E. D.;Hoyt, D. W.;
10:65:10 Clustering of N impurities in ZnO
DOI:10.1063/1.3675867 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Furthmueller, J.;Hachenberg, F.;Schleife, A.;Rogers, D.;Teherani, F. Hosseini;Bechstedt, F.;
10:65:11 Shallow acceptor complexes in p-type ZnO
DOI:10.1063/1.4802753 JN:APPLIED PHYSICS LETTERS PY:2013
TC:13 AU: Reynolds, J. G.;Reynolds, C. L., Jr.;Mohanta, A.;Muth, J. F.;Rowe, J. E.;Everitt, H. O.;Aspnes, D. E.;
10:65:12 Acceptor and surface states of ZnO nanocrystals: a unified model
DOI:10.1088/0957-4484/22/47/475703 JN:NANOTECHNOLOGY PY:2011
TC:11 AU: Teklemichael, S. T.;McCluskey, M. D.;
10:65:13 Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma
DOI:10.1063/1.3647773 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Huang, Rui;Xu, Shuigang;Guo, Wenhao;Wang, Lin;Song, Jie;Ng, Tsz-Wai;Huang, Jianan;Lee, Shuit-Tong;Du, Shengwang;Wang, Ning;
10:65:14 Neutral nitrogen acceptors in ZnO: The Zn-67 hyperfine interactions
DOI:10.1063/1.4867736 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Golden, E. M.;Evans, S. M.;Halliburton, L. E.;Giles, N. C.;
10:65:15 Nitrogen impurity states in polycrystalline ZnO. A combined EPR and theoretical study
DOI:10.1039/b915578c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:21 AU: Gallino, F.;Di Valentin, C.;Pacchioni, G.;Chiesa, M.;Giamello, E.;
10:65:16 Optical Properties of ZnO-Alloyed Nanocrystalline Films
DOI:10.1155/2012/963485 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Che, Hui;Huso, Jesse;Morrison, John L.;Thapa, Dinesh;Huso, Michelle;Yeh, Wei Jiang;Tarun, M. C.;McCluskey, M. D.;Bergman, Leah;
10:65:17 Identification of a N-related shallow acceptor and electron paramagnetic resonance center in ZnO: N-2(+) on the Zn site
DOI:10.1103/PhysRevB.87.195207 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Lambrecht, Walter R. L.;Boonchun, Adisak;
10:65:18 Electron paramagnetic resonance and photo-electron paramagnetic resonance investigation on the recharging of the substitutional nitrogen acceptor in ZnO
DOI:10.1063/1.4765729 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Stehr, J. E.;Hofmann, D. M.;Meyer, B. K.;
10:65:19 Recharging behavior of nitrogen-centers in ZnO
DOI:10.1063/1.4892632 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Philipps, Jan M.;Stehr, Jan E.;Buyanova, Irina;Tarun, Marianne C.;McCluskey, Matthew D.;Meyer, Bruno K.;Hofmann, Detlev M.;
10:65:20 Synthesis of zinc oxide nanoparticles by dc arc dusty plasma
DOI:10.1007/s11051-012-1205-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:3 AU: Senthilkumar, K.;Senthilkumar, O.;Morito, S.;Ohba, T.;Fujita, Y.;
10:65:21 Hydrogen related defect complexes in ZnO nanoparticles
DOI:10.1063/1.3485049 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Senthilkumar, K.;Tokunaga, M.;Okamoto, H.;Senthilkumar, O.;Fujita, Y.;
10:65:22 Vibrational Spectroscopy of Na-H Complexes in ZnO
DOI:10.1007/s11664-013-2723-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:4 AU: Parmar, Narendra S.;McCluskey, Matthew D.;Lynn, Kelvin G.;
10:65:23 Structure and stability of N-H complexes in single-crystal ZnO
DOI:10.1063/1.3443457 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Jokela, S. J.;McCluskey, M. D.;
10:65:24 Defects and acceptor centers in ZnO introduced by C+-implantation
DOI:10.1007/s10853-013-7886-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:2 AU: Jiang, M.;Xue, X. D.;Chen, Z. Q.;Liu, Y. D.;Liang, H. W.;Zhang, H. J.;Kawasuso, A.;
10:65:25 Nitrogen-doped ZnO shells: Studies on optical transparency and electrical conductivity
DOI:10.1016/j.materresbull.2012.01.024 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Gaikwad, Rajendra S.;Mane, Rajaram S.;Pawar, Bhagwat N.;Ambade, Rohan B.;Ahn, Hee Joon;Han, Sung-Hwan;Joo, Oh-Shim;
10:65:26 Special Effect of Urea as a Stabilizer in Thermal Immersion Method to Synthesis Porous Zinc Oxide Nanostructures
DOI:10.1155/2013/163527 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Husairi, F. S.;Ali, Syahirah Mhd;Azlinda, A.;Rusop, M.;Abdullah, S.;
10:66:1 Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals
DOI:10.1103/PhysRevLett.106.087205 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:54 AU: Liu, Yu;Wang, Gang;Wang, Shunchong;Yang, Jianhui;Chen, Liang;Qin, Xiubo;Song, Bo;Wang, Baoyi;Chen, Xiaolong;
10:66:2 Rise and fall of defect induced ferromagnetism in SiC single crystals
DOI:10.1063/1.3597629 JN:APPLIED PHYSICS LETTERS PY:2011
TC:22 AU: Li, Lin;Prucnal, S.;Yao, S. D.;Potzger, K.;Anwand, W.;Wagner, A.;Zhou, Shengqiang;
10:66:3 Ferromagnetic ordering of silicon vacancies in N-doped silicon carbide
DOI:10.1063/1.3291562 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Zhao, Mingwen;Pan, Fengchun;Mei, Liangmo;
10:66:4 Adjustable nitrogen-vacancy induced magnetism in AlN
DOI:10.1063/1.3696023 JN:APPLIED PHYSICS LETTERS PY:2012
TC:16 AU: Liu, Yu;Jiang, Liangbao;Wang, Gang;Zuo, Sibin;Wang, Wenjun;Chen, Xiaolong;
10:66:5 Ferromagnetism in homogeneous (Al,Co)-codoped 4H-silicon carbides
DOI:10.1016/j.jmmm.2014.03.062 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:1 AU: Zhang, X. H.;Han, J. C.;Zhou, J. G.;Xin, C.;Zhang, Z. H.;Song, B.;
10:66:6 Irradiation-induced magnetic ordering in SiC: Experimental results and a density functional study
DOI:10.1063/1.4860957 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: He, Xiujie;Tan, Jie;Zhang, Baoliang;Zhao, Mingwen;Xia, Huihao;Liu, Xiangdong;He, Zhoutong;Yang, Xinmei;Zhou, Xingtai;
10:66:7 d(0) magnetism in semiconductors through confining delocalized atomic orbitals
DOI:10.1063/1.4788726 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Kan, E. J.;Wu, Fang;Wu, Haiping;Xiao, Chuanyun;Xiang, Hongjun;Deng, Kaiming;
10:66:8 Room-temperature ferromagnetism in Cu-implanted 6H-SiC single crystal
DOI:10.1063/1.4800562 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Zheng, H. W.;Yan, Y. L.;Lv, Z. C.;Yang, S. W.;Li, X. G.;Liu, J. D.;Ye, B. J.;Peng, C. X.;Diao, C. L.;Zhang, W. F.;
10:66:9 A comparative study on magnetism in Zn-doped AlN and GaN from first-principles
DOI:10.1063/1.4895057 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Xu, Liang;Wang, Lingling;Xiao, Wenzhi;Xiao, Gang;Huang, Weiqing;
10:66:10 Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN
DOI:10.1039/c0jm02083d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:13 AU: Song, Bo;Zhu, Kaixing;Liu, Jun;Jian, Jikang;Han, Jiecai;Bao, Huiqiang;Li, Hui;Liu, Yu;Zuo, Hongbo;Wang, Wanyan;Wang, Gang;Zhang, Xinghong;Meng, Songhe;Wang, Wenjun;Chen, Xiaolong;
10:66:11 Synthesis of CoS nanoplates and their ferromagnetic properties
DOI:10.1016/j.matlet.2011.11.109 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Lei, M.;Fu, X. L.;Zhang, Y. B.;Yang, H. J.;Huang, Y. T.;Zhang, L.;Wang, Y. G.;
10:66:12 Enhancing magnetic vacancies in semiconductors by strain
DOI:10.1063/1.3685488 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Kan, Erjun;Wu, Fang;Zhang, Yuemei;Xiang, Hongjun;Lu, Ruifeng;Xiao, Chuanyun;Deng, Kaiming;Su, Haibin;
10:66:13 Defect-induced room temperature ferromagnetism in un-doped InN film
DOI:10.1063/1.3698320 JN:AIP ADVANCES PY:2012
TC:9 AU: Xie, Q. Y.;Gu, M. Q.;Huang, L.;Zhang, F. M.;Wu, X. S.;
10:66:14 Local structure and magnetic properties of Mn-doped 3C-SiC nanoparticles
DOI:10.1063/1.3665258 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Zheng, H. W.;Wang, Z. Q.;Liu, X. Y.;Diao, C. L.;Zhang, H. R.;Gu, Y. Z.;
10:66:15 Investigation of room temperature ferromagnetism of 3C-SiC by vanadium carbide doping
DOI:10.1063/1.4756939 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Wang, Hui;Yan, Cheng-Feng;Kong, Hai-Kuan;Chen, Jian-Jun;Xin, Jun;Shi, Er-Wei;
10:66:16 Raman scattering and magnetizations studies of (Al, Cr)-codoped 4H-SiC
DOI:10.1016/j.jmmm.2011.06.044 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:10 AU: Song, B.;Chen, X. L.;Han, J. C.;Wang, G.;Bao, H. Q.;Duan, L. B.;Zhu, K. X.;Li, H.;Zhang, Z. H.;Wang, W. Y.;Wang, W. J.;Zhang, X. H.;Meng, S. H.;
10:66:17 Room temperature ferromagnetism induced by N-ion implantation in 6H-SiC single crystal
DOI:10.1016/j.matlet.2012.11.118 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Lv, Z. C.;Ma, X. P.;Zheng, H. W.;An, R.;Peng, C. X.;Liu, J. D.;Ye, B. J.;Diao, C. L.;Liu, X. Y.;Zhang, W. F.;
10:66:18 First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silicon carbide
DOI:10.1063/1.3471813 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Pan, Fengchun;Zhao, Mingwen;Mei, Liangmo;
10:66:19 Synthesis of N-deficient indium nitride nanowires and their room-temperature ferromagnetism
DOI:10.1016/j.matlet.2012.01.042 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Lei, M.;Fu, X. L.;Yang, H. J.;Wang, Y. G.;Zhang, Y. B.;Huang, Y. T.;Zhang, L.;
10:66:20 Effect of vacancies on magnetic behaviors of Cu-doped 6H-SiC
DOI:10.1007/s00339-014-8439-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Yan, Yu Li;Men, Bao Quan;Liu, Guang Sheng;Zheng, Hai Wu;
10:66:21 Magnetism in Ni-doped AIN with N vacancy: A first-principles study
DOI:10.1016/j.commatsci.2014.04.004 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:0 AU: Gonzalez-Garcia, Alvaro;Lopez-Perez, William;Gonzalez-Hernandez, Rafael;
10:66:22 Nitrogen-vacancy induced intrinsic ferromagnetism and half-metallicity in BN
DOI:10.1016/j.commatsci.2013.08.028 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:4 AU: Chen, Yifei;Mi, Wenbo;Chen, Guifeng;Song, Qinggong;Guo, Songqing;
10:66:23 First-principles characterization of an AlSiVC center in cubic silicon carbide
DOI:10.1063/1.3614494 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Wang, Xiaopeng;Zhao, Mingwen;Xia, Huihao;Yan, Shishen;Liu, Xiangdong;
10:66:24 Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles
DOI:10.1007/s00339-013-8065-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Ren, Huihui;Jian, Jikang;Chen, Chu;Pan, Dong;Ablat, Abdulezi;Sun, Yanfei;Li, Jin;Wu, Rong;
10:66:25 Ferromagnetic ordering and metallic-like conductivity in sputtered SnNx films
DOI:10.1016/j.jallcom.2014.03.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Zhou, Baozeng;Zhou, Wei;Wu, Ping;
10:66:26 Synthesis of well dispersed cobalt disulfide and their photoluminescence and magnetic properties
DOI:10.1016/j.matlet.2012.02.009 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Lei, M.;Zhang, R.;Yang, H. J.;Wang, Y. G.;
10:66:27 Magnetic Properties of Al-doped B4C and SiC Ceramics
DOI:10.1111/jace.12510 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:0 AU: Zhang, Caihong;Lian, Jiabiao;Ng, Dickon H. L.;
10:66:28 Impacts of enhanced electronic correlation in anion p-orbitals on electronic structure and magnetic properties of nitrogen or carbon doped zinc oxide
DOI:10.1063/1.3672090 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Zhang, Yao-fang;Liu, Hong;Wu, Jian;Zuo, Xu;
10:66:29 Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition
DOI:10.1016/j.tsf.2010.08.099 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Li, Siwei;Zeng, Bin;Feng, Zude;Liu, Yongsheng;Yang, Wenbin;Cheng, Iaifei;Zhang, Litong;
10:67:1 Photocatalytic performance of novel samarium-doped spherical-like ZnO hierarchical nanostructures under visible light irradiation for 2,4-dichlorophenol degradation
DOI:10.1016/j.jcis.2013.03.043 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:21 AU: Sin, Jin-Chung;Lam, Sze-Mun;Lee, Keat-Teong;Mohamed, Abdul Rahman;
10:67:2 Preparation and characterization of antimicrobial Ce-doped ZnO nanoparticles for photocatalytic detoxification of cyanide
DOI:10.1016/j.matchemphys.2010.05.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:51 AU: Karunakaran, Chockalingam;Gomathisankar, Paramasivan;Manikandan, Govindasamy;
10:67:3 Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties
DOI:10.1016/j.jallcom.2013.04.133 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:18 AU: Yayapao, Oranuch;Thongtem, Titipun;Phuruangrat, Anukorn;Thongtem, Somchai;
10:67:4 Simple and large scale refluxing method for preparation of Ce-doped ZnO nanostructures as highly efficient photocatalyst
DOI:10.1016/j.apsusc.2012.11.053 JN:APPLIED SURFACE SCIENCE PY:2013
TC:29 AU: Rezaei, M.;Habibi-Yangjeh, A.;
10:67:5 Synthesis and Characterization of Europium-Doped Zinc Oxide Photocatalyst
DOI:10.1155/2014/367529 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:2 AU: Phuruangrat, Anukorn;Yayapao, Oranuch;Thongtem, Titipun;Thongtem, Somchai;
10:67:6 Ultrasonic-assisted synthesis of Nd-doped ZnO for photocatalysis
DOI:10.1016/j.matlet.2012.09.027 JN:MATERIALS LETTERS PY:2013
TC:23 AU: Yayapao, Oranuch;Thongtem, Titipun;Phuruangrat, Anukorn;Thongtem, Somchai;
10:67:7 Enhanced optical properties of heterostructured ZnO/CeO2 nanocomposite fabricated by one-pot hydrothermal method: Fluorescence and ultraviolet absorption and visible light transparency
DOI:10.1016/j.optmat.2014.09.037 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: He, Geping;Fan, Huiqing;Wang, Zhiwei;
10:67:8 Electrochemical synthesis and photocatalytic behavior of flower shaped ZnO microstructures
DOI:10.1016/j.powtec.2012.04.021 JN:POWDER TECHNOLOGY PY:2012
TC:17 AU: Venkatesha, T. G.;Nayaka, Y. Arthoba;Viswanatha, R.;Vidyasagar, C. C.;Chethana, B. K.;
10:67:9 Facile one-step synthesis of N-doped ZnO micropolyhedrons for efficient photocatalytic degradation of formaldehyde under visible-light irradiation
DOI:10.1016/j.apsusc.2014.04.217 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Wu, Changle;
10:67:10 Detailed of X-ray diffraction and photoluminescence studies of Ce doped ZnO nanocrystals
DOI:10.1016/j.jallcom.2011.03.017 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:26 AU: George, Achamma;Sharma, Suchinder K.;Chawla, Santa;Malik, M. M.;Qureshi, M. S.;
10:67:11 Sonochemical synthesis, photocatalysis and photonic properties of 3% Ce-doped ZnO nanoneedles
DOI:10.1016/j.ceramint.2012.10.136 JN:CERAMICS INTERNATIONAL PY:2013
TC:11 AU: Yayapao, Oranuch;Thongtem, Somchai;Phuruangrat, Anukorn;Thongtem, Titipun;
10:67:12 Effect of annealing temperature on growth of Ce-ZnO nanocomposite thin films: X-ray photoelectron spectroscopy study
DOI:10.1016/j.tsf.2011.06.081 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Yousefi, M.;Azimirad, R.;Amiri, M.;Moshfegh, A. Z.;
10:67:13 Nanostructured CexZn1-xO thin films: Influence of Ce doping on the structural, optical and electrical properties
DOI:10.1016/j.jallcom.2013.10.210 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Mariappan, R.;Ponnuswamy, V.;Suresh, P.;Suresh, R.;Ragavendar, M.;Bose, A. Chandra;
10:67:14 Special morphologies of Mg, Ca, and Y-doped ZnO/La2O3 composite for photocatalysis
DOI:10.1016/j.matlet.2014.03.056 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Li, Chun;Hu, Ruisheng;Zhou, Tingting;Wu, Haitao;Song, Kunpeng;Liu, Xiaoxia;Wang, Ruida;
10:67:15 Synthesis, structural and optical properties of Sm3+ and Nd3+ doped cadmium sulfide nanocrystals
DOI:10.1016/j.materresbull.2013.12.054 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Saravanan, L.;Jayavel, R.;Pandurangan, A.;Liu Jih-Hsin;Miao Hsin-Yuan;
10:67:16 Effect of doping precursors on the optical properties of Ce-doped ZnO nanorods
DOI:10.1016/j.tsf.2011.08.022 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Chen, X. Y.;Fang, F.;Ng, A. M. C.;Djurisic, A. B.;Chan, W. K.;Lui, H. F.;Fong, P. W. K.;Surya, C.;Cheah, K. W.;
10:67:17 Influence of Sm doping on the microstructural properties of CdS nanocrystals
DOI:10.1016/j.powtec.2014.06.051 JN:POWDER TECHNOLOGY PY:2014
TC:3 AU: Saravanan, L.;Jayavel, R.;Pandurangan, A.;Jih-Hsin, Liu;Hsin-Yuan, Miao;
10:67:18 Blue luminescence from Ce-doped ZnO thin films prepared by magnetron sputtering
DOI:10.1007/s00339-012-6883-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:8 AU: Luo, Q.;Wang, L. S.;Guo, H. Z.;Lin, K. Q.;Chen, Y.;Yue, G. H.;Peng, D. L.;
10:67:19 Microwave-assisted preparation of Ce-doped ZnO nanostructures as an efficient photocatalyst
DOI:10.1016/j.matlet.2013.07.120 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Rezaei, M.;Habibi-Yangjeh, A.;
10:67:20 Preparation of lanthanide doped CdS, ZnS quantum dots in natural polysaccharide template and their optical properties
DOI:10.1016/j.optmat.2011.09.013 JN:OPTICAL MATERIALS PY:2012
TC:9 AU: Wang, Xiaohui;Li, Dong;Guo, Yanzhu;Wang, Xiaoying;Du, Yumin;Sun, Runcang;
10:67:21 Photoluminescence properties of rod-like Ce-doped ZnO nanostructured films formed by hot-water treatment of sol-gel derived coating
DOI:10.1016/j.optmat.2013.01.011 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Tan, Wai Kian;Razak, Khairunisak Abdul;Lockman, Zainovia;Kawamura, Go;Muto, Hiroyuki;Matsuda, Atsunori;
10:67:22 Influence of lanthanide ion on the morphology and luminescence properties of cadmium sulphide nanocrystals
DOI:10.1016/j.jallcom.2011.02.130 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:1 AU: Nisha, K. D.;Navaneethan, M.;Hayakawa, Y.;Ponnusamy, S.;Muthamizhchelvan, C.;
10:67:23 Structure analyses and growth mechanism of ZnO nanoladders
DOI:10.1016/j.matlet.2010.05.049 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Wang, Hua;Yong, Benshou;Wan, Yuting;Chen, Bo;Fang, Yanjun;Wang, Yewu;Sha, Jian;
10:67:24 Removal of polyvinyl alcohol from aqueous solutions using P-25 TiO2 and ZnO photocataysts: A comparative study
DOI:10.1016/j.powtec.2013.05.027 JN:POWDER TECHNOLOGY PY:2013
TC:3 AU: Lin, Chia-Chang;Hsu, Ling-Jung;
10:68:1 Transparent conductive Ga-doped MgxZn1-xO films with high optical transmittance prepared by radio frequency magnetron sputtering
DOI:10.1016/j.jallcom.2012.10.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:17 AU: Liu, Wei-Sheng;Chen, Wei-Ku;Hsueh, Kuang-Po;
10:68:2 Effects of Ag-induced acceptor defects on the band gap tuning and conductivity of Li:ZnO films
DOI:10.1063/1.4807932 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Li, Jian-Chang;Cao, Qing;Hou, Xue-Yan;
10:68:3 Transparent conductive Ga-doped MgZnO/Ag/Ga-doped MgZnO sandwich structure with improved conductivity and transmittance
DOI:10.1016/j.jallcom.2013.01.189 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Liu, Wei-Sheng;Liu, Yueh-Hung;Chen, Wei-Ku;Hsueh, Kuang-Po;
10:68:4 Improved Crystal Quality of Transparent Conductive Ga-doped ZnO Films by Magnesium Doping Through Radio-Frequency Magnetron Sputtering Preparation
DOI:10.1111/jace.12630 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:4 AU: Liu, Wei-Sheng;Chen, Wei-Ku;Wu, Shen-Yu;Hsueh, Kuang-Po;
10:68:5 Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping
DOI:10.1016/j.jallcom.2014.06.175 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Liu, Wei-Sheng;Wu, Shen-Yu;Hung, Chao-Yu;Tseng, Ching-Hsuan;Chang, Yu-Lin;
10:68:6 Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering
DOI:10.1016/j.tsf.2009.10.149 JN:THIN SOLID FILMS PY:2010
TC:35 AU: Yen, W. T.;Lin, Y. C.;Yao, P. C.;Ke, J. H.;Chen, Y. L.;
10:68:7 Quality improvement of high-performance transparent conductive Ti-doped GaZnO thin film
DOI:10.1016/j.tsf.2014.05.028 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Liu, Wei-Sheng;Wu, Shen-Yu;Tseng, Ching-Hsuan;Hung, Chao-Yu;
10:68:8 The transparence comparison of Ga- and Al-doped ZnO thin films
DOI:10.1016/j.apsusc.2011.04.138 JN:APPLIED SURFACE SCIENCE PY:2011
TC:20 AU: Li, Zheng-Zheng;Chen, Zhi-Zhan;Huang, Wei;Chang, Shao-Hui;Ma, Xue-Ming;
10:68:9 Field emission and optical properties of Ga-doped ZnO nanowires synthesized via thermal evaporation
DOI:10.1016/j.apsusc.2010.11.145 JN:APPLIED SURFACE SCIENCE PY:2011
TC:23 AU: Chang, Li Wei;Yeh, Jien Wei;Cheng, Chia Liang;Shieu, F. S.;Shih, Han C.;
10:68:10 Rapid thermal annealing of ITO films
DOI:10.1016/j.apsusc.2011.03.009 JN:APPLIED SURFACE SCIENCE PY:2011
TC:20 AU: Song, Shumei;Yang, Tianlin;Liu, Jingjing;Xin, Yanqing;Li, Yanhui;Han, Shenghao;
10:68:11 Characterization and antibacterial performance of bioactive Ti-Zn-O coatings deposited on titanium implants
DOI:10.1016/j.tsf.2012.05.093 JN:THIN SOLID FILMS PY:2013
TC:11 AU: Tsai, Ming-Tzu;Chang, Yin-Yu;Huang, Heng-Li;Hsu, Jui-Ting;Chen, Ya-Chi;Wu, Aaron Yu-Jen;
10:68:12 Changes in electrical and optical properties of polycrystalline Ga-doped ZnO thin films due to thermal desorption of zinc
DOI:10.1016/j.tsf.2011.10.039 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Makino, Hisao;Sato, Yasushi;Yamamoto, Naoki;Yamamoto, Tetsuya;
10:68:13 Effect of annealing treatment on structural, electrical, and optical properties of Ga-doped ZnO thin films deposited by RF magnetron sputtering
DOI:10.1016/j.tsf.2011.04.147 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Wu, F.;Fang, L.;Pan, Y. J.;Zhou, K.;Ruan, H. B.;Liu, G. B.;Kong, C. Y.;
10:68:14 Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films
DOI:10.1016/j.apsusc.2011.02.051 JN:APPLIED SURFACE SCIENCE PY:2011
TC:18 AU: Yu, Chang-Feng;Chen, Sy-Hann;Sun, Shih-Jye;Chou, Hsiung;
10:68:15 Effect of rapid thermal annealing on MgxZn1-xO films prepared by radio-frequency magnetron sputtering
DOI:10.1116/1.3442476 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:10 AU: Hsueh, Kuang-Po;Tun, Chun-Ju;Chiu, Hsien-Chin;Huang, Yu-Ping;Chi, Gou-Chung;
10:68:16 Effects of aluminium doping on zinc oxide transparent thin films grown by filtered vacuum arc deposition
DOI:10.1016/j.mseb.2012.02.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:4 AU: Gontijo, L. C.;Machado, R.;Nascimento, V. P.;
10:68:17 A study on Ti-doped ZnO transparent conducting thin films fabricated by pulsed laser deposition
DOI:10.1016/j.apsusc.2014.03.119 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Zhao, Wenda;Zhou, Qianfei;Zhang, Xin;Wu, Xiaojing;
10:68:18 High-temperature stability of postgrowth-annealed Al-doped MgxZn1-xO films without the phase separation effect
DOI:10.1116/1.4754813 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:3 AU: Hsueh, Kuang-Po;Cheng, Yi-Chang;Lin, Wen-Yen;Cheng, Po-Wei;Chiu, Hsien-Chin;Wang, Hsiang-Chun;Sheu, Jinn-Kong;Yeh, Yu-Hsiang;
10:68:19 Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film
DOI:10.1155/2013/502382 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Chen, Tao-Hsing;Liao, Tzu-Yu;
10:68:20 Effects of oxygen partial pressure and substrate temperature on the structure and optical properties of MgxZn1-xO thin films prepared by magnetron sputtering
DOI:10.1016/j.apsusc.2011.02.076 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Zhang, Xinghua;Lu, Zunming;Meng, Fanbin;Wang, Yongzhong;Li, Ying;Yu, Xiao;Tang, Chengchun;
10:68:21 Magnetic and electrical properties of TiO2:Nb thin films
DOI:10.1016/j.apsusc.2013.12.047 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Yu, Chang-Feng;Sun, Shih-Jye;Chen, Jian-Ming;
10:68:22 Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering
DOI:10.1007/s11664-010-1328-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:2 AU: Shen, Jung-Hsiung;Yeh, Sung-Wei;Gan, Dershin;Yang, Koho;Huang, Hsing-Lu;Mao, Shih-Wei;
10:68:23 High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type mu c-Si:H layer
DOI:10.1016/j.tsf.2011.12.083 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Chang, Ping-Kuan;Lu, Chun-Hsiung;Yeh, Chih-Hung;Houng, Mau-Phon;
10:68:24 Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputtering
DOI:10.1016/j.tsf.2013.03.019 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Lee, Geun-Hyoung;
10:69:1 Effect of polar and non-polar surfaces of ZnO nanostructures on photocatalytic properties
DOI:10.1016/j.jallcom.2012.02.162 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:19 AU: Yang, Jinghai;Wang, Jian;Li, Xiuyan;Lang, Jihui;Liu, Fuzhu;Yang, Lili;Zhai, Hongju;Gao, Ming;Zhao, Xiaoting;
10:69:2 Defect mediated photocatalytic activity in shape-controlled ZnO nanostructures
DOI:10.1016/j.jallcom.2011.03.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:40 AU: Gupta, Jagriti;Barick, K. C.;Bahadur, D.;
10:69:3 Comparison of photocatalytic activity of ZnO rod arrays with various diameter sizes and orientation
DOI:10.1016/j.jallcom.2013.05.037 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:10 AU: Li, Xiuyan;Wang, Jian;Yang, Jinghai;Lang, Jihui;Lu, Shiquan;Wei, Maobin;Meng, Xiangwei;Kou, Chunlei;Li, Xuefei;
10:69:4 Antibacterial and photocatalytic activities of sonochemically prepared ZnO and Ag-ZnO
DOI:10.1016/j.jallcom.2010.08.128 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:37 AU: Karunakaran, C.;Rajeswari, V.;Gomathisankar, P.;
10:69:5 Investigations of optical, structural and antibacterial properties of Al-Cr dual-doped ZnO nanostructures
DOI:10.1016/j.jallcom.2014.04.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Shah, A. H.;Ahamed, M. Basheer;Neena, D.;Mohmed, Fida;Iqbal, Aamir;
10:69:6 Photocatalytic activity of nanostructured ZnO films prepared by two different methods for the photoinitiated decolorization of malachite green
DOI:10.1016/j.jallcom.2010.04.020 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:27 AU: Kaneva, Nina;Stambolova, Irina;Blaskov, Vladimir;Dimitriev, Yanko;Vassilev, Sasho;Dushkin, Ceco;
10:69:7 Glucose-mediated solution-solid route for easy synthesis of Ag/ZnO particles with superior photocatalytic activity and photostability
DOI:10.1016/j.jallcom.2011.04.005 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:26 AU: Tian, Chungui;Zhang, Qi;Jiang, Baojiang;Tian, Guohui;Fu, Honggang;
10:69:8 Sonochemistry-assisted synthesis and optical properties of mesoporous ZnS nanomaterials
DOI:10.1039/c3ta13636a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:12 AU: Zhu, Yun-Pei;Li, Jie;Ma, Tian-Yi;Liu, Yu-Ping;Du, Gaohui;Yuan, Zhong-Yong;
10:69:9 ZnO hierarchical structures synthesized via hydrothermal method and their photoluminescence properties
DOI:10.1016/j.jallcom.2009.09.127 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:17 AU: Huang, Peng;Zhang, Xin;Wei, Jumeng;Feng, Boxue;
10:69:10 Photocatalytic activity of nanoneedles, nanospheres, and polyhedral shaped ZnO powders in organic dye degradation processes
DOI:10.1016/j.jallcom.2013.03.258 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Lucca Sanchez, Felipe Antonio;Takimi, Antonio Shigueaki;Rodembusch, Fabiano Severo;Bergmann, Carlos Perez;
10:69:11 A novel Ag/graphene composite: facile fabrication and enhanced antibacterial properties
DOI:10.1007/s10853-012-6964-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:14 AU: Jiang, Baojiang;Tian, Chungui;Song, Gang;Chang, Wei;Wang, Guofeng;Wu, Qian;Fu, Honggang;
10:69:12 Enhancement of photocatalytic property of ZnO for gaseous formaldehyde degradation by modifying morphology and crystal defect
DOI:10.1016/j.jallcom.2012.09.109 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Liao, Yichuan;Xie, Changsheng;Liu, Yuan;Huang, Qingwu;
10:69:13 Synthesis, characterization and photocatalytic property of flame sprayed zinc oxide nanoparticles
DOI:10.1016/j.jallcom.2009.10.147 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:16 AU: Trommer, R. M.;Alves, A. K.;Bergmann, C. P.;
10:69:14 A green route to synthesize novel Ag/C antibacterial agent
DOI:10.1016/j.materresbull.2011.10.018 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Jiang, Baojiang;Tian, Chungui;Song, Gang;Pan, Qingjiang;Wang, Zhiyi;Shi, Lulu;Qiao, Yingjie;Fu, Honggang;
10:69:15 Synthesis of ZnO-Pt nanoflowers and their photocatalytic applications
DOI:10.1088/0957-4484/21/18/185606 JN:NANOTECHNOLOGY PY:2010
TC:22 AU: Yuan, Jiaquan;Choo, Eugene Shi Guang;Tang, Xiaosheng;Sheng, Yang;Ding, Jun;Xue, Junmin;
10:69:16 Plasmonic enhancement of blue emission from ZnO nanorods grown on the anodic aluminum oxide (AAO) template
DOI:10.1007/s00339-012-7462-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:8 AU: Norek, Malgorzata;Luka, Grzegorz;Godlewski, Marek;Plocinski, Tomasz;Michalska-Domanska, Marta;Stepniowski, Wojciech J.;
10:69:17 Room temperature ferromagnetism and hopping conduction in Pt NCs/Al2O3 films
DOI:10.1063/1.3562872 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Ma, Y. W.;Ding, J.;Yi, J. B.;Chan, Lap;Herng, T. S.;Huang, Stella;Ran, M.;
10:70:1 Multifunctional ZnO-Nanowire-Based Sensor
DOI:10.1002/adfm.201101549 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:53 AU: Menzel, Andreas;Subannajui, Kittitat;Gueder, Firat;Moser, Dominik;Paul, Oliver;Zacharias, Margit;
10:70:2 Inkjet printed acrylic formulations based on UV-reduced graphene oxide nanocomposites
DOI:10.1007/s10853-012-6866-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:19 AU: Giardi, R.;Porro, S.;Chiolerio, A.;Celasco, E.;Sangermano, M.;
10:70:3 Zinc oxide nanostructures: from growth to application
DOI:10.1007/s10853-012-6938-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:32 AU: Gomez, Jorge L.;Tigli, Onur;
10:70:4 Photothermal Deoxygenation of Graphene Oxide for Patterning and Distributed Ignition Applications
DOI:10.1002/adma.200901902 JN:ADVANCED MATERIALS PY:2010
TC:57 AU: Gilje, Scott;Dubin, Sergey;Badakhshan, Alireza;Farrar, Jabari;Danczyk, Stephen A.;Kaner, Richard B.;
10:70:5 Selective growth of ZnO nanowires on substrates patterned by photolithography and inkjet printing
DOI:10.1007/s00339-014-8453-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Laurenti, M.;Verna, A.;Fontana, M.;Quaglio, M.;Porro, S.;
10:70:6 Controlled hydrothermal growth of multi-length-scale ZnO nanowires using liquid masking layers
DOI:10.1007/s10853-014-8507-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Jang, Hun Soo;Son, Bokyeong;Song, Hui;Jung, Gun Young;Ko, Heung Cho;
10:70:7 In Situ Monitoring of Laser-Assisted Hydrothermal Growth of ZnO Nanowires: Thermally Deactivating Growth Kinetics
DOI:10.1002/smll.201301599 JN:SMALL PY:2014
TC:5 AU: In, Jung Bin;Kwon, Hyuk-Jun;Lee, Daeho;Ko, Seung Hwan;Grigoropoulos, Costas P.;
10:70:8 Real-time monitoring of graphene oxide reduction in acrylic printable composite inks
DOI:10.1007/s00339-014-8533-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Porro, S.;Giardi, R.;Chiolerio, A.;
10:70:9 Rapid, One-Step, Digital Selective Growth of ZnO Nanowires on 3D Structures Using Laser Induced Hydrothermal Growth
DOI:10.1002/adfm.201203863 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:17 AU: Yeo, Junyeob;Hong, Sukjoon;Wanit, Manorotkul;Kang, Hyun Wook;Lee, Daeho;Grigoropoulos, Costas P.;Sung, Hyung Jin;Ko, Seung Hwan;
10:70:10 Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth
DOI:10.1155/2013/246328 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:7 AU: Hong, Sukjoon;Yeo, Junyeob;Manorotkul, Wanit;Kim, Gunho;Kwon, Jinhyeong;An, Kunsik;Ko, Seung Hwan;
10:70:11 Single Nanowire Resistive Nano-heater for Highly Localized Thermo-Chemical Reactions: Localized Hierarchical Heterojunction Nanowire Growth
DOI:10.1002/smll.201401427 JN:SMALL PY:2014
TC:3 AU: Yeo, Junyeob;Kim, Gunho;Hong, Sukjoon;Lee, Jinhwan;Kwon, Jinhyeong;Lee, Habeom;Park, Heeseung;Manoroktul, Wanit;Lee, Ming-Tsang;Lee, Bong Jae;Grigoropoulos, Costas P.;Ko, Seung Hwan;
10:70:12 Polyaniline micropattern onto flexible substrate by vapor deposition polymerization-mediated inkjet printing
DOI:10.1016/j.tsf.2010.02.041 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Cho, Joonhyuk;Shin, Kyoung-Hwan;Jang, Jyongsik;
10:70:13 Inkjet Printed Negative Supercapacitors: Synthesis of Polyaniline-Based Inks, Doping Agent Effect, and Advanced Electronic Devices Applications
DOI:10.1002/adfm.201303371 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:14 AU: Chiolerio, Alessandro;Bocchini, Sergio;Porro, Samuele;
10:70:14 Single step formation of indium and tin doped ZnO nanowires by thermal oxidation of indium-zinc and tin-zinc metal films: Growth and optical properties
DOI:10.1016/j.ceramint.2014.05.085 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Shaik, Ummar Pasha;Krishna, M. Ghanashyam;
10:70:15 Digital Selective Growth of ZnO Nanowire Arrays from Inkjet-Printed Nanoparticle Seeds on a Flexible Substrate
DOI:10.1021/la203781x JN:LANGMUIR PY:2012
TC:16 AU: Ko, Seung Hwan;Lee, Daeho;Hotz, Nico;Yeo, Junyeob;Hong, Sukjoon;Nam, Koo Hyun;Grigoropouloss, Costas P.;
10:70:16 Comparison between ZnO nanowires grown by chemical vapor deposition and hydrothermal synthesis
DOI:10.1007/s00339-013-7838-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:14 AU: Podrezova, L. V.;Porro, S.;Cauda, V.;Fontana, M.;Cicero, G.;
10:70:17 Zinc Oxide Nanoparticles Catalyze Rapid Hydrolysis of Poly( lactic acid) at Low Temperatures
DOI:10.1002/app.40287 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2014
TC:2 AU: Qu, Meng;Tu, Huilin;Amarante, Miranda;Song, Yi-Qiao;Zhu, S. Sherry;
10:70:18 Synthesis of polyaniline-based inks, doping thereof and test device printing towards electronic applications
DOI:10.1039/c3tc30764f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:15 AU: Bocchini, S.;Chiolerio, A.;Porro, S.;Accardo, D.;Garino, N.;Bejtka, K.;Perrone, D.;Pirri, C. F.;
10:70:19 Vacuum-assisted microcontact printing (mu CP) for aligned patterning of nano and biochemical materials
DOI:10.1039/c2tc00288d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:4 AU: Kang, Hyun Wook;Leem, Juyoung;Ko, Seung Hwan;Yoon, Sang Youl;Sung, Hyung Jin;
10:70:20 In situ synthesis of Ag-acrylic nanocomposites: Tomography-based percolation model, irreversible photoinduced electromigration and reversible electromigration
DOI:10.1016/j.mseb.2011.12.029 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:14 AU: Chiolerio, A.;Sangermano, M.;
10:70:21 Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors
DOI:10.1063/1.4739486 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Lee, In-yeal;Wang, Jianwei;Kim, Gil-Ho;Park, Jin-Hong;Kannan, E. S.;Jang, Ji-Hoon;Kwon, Young-Uk;
10:70:22 Reducing minimum flash ignition energy of Al microparticles by addition of WO3 nanoparticles
DOI:10.1063/1.4790152 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Ohkura, Yuma;Rao, Pratap M.;Cho, In Sun;Zheng, Xiaolin;
10:70:23 Hybrid Ag-based inks for nanocomposite inkjet printed lines: RF properties
DOI:10.1016/j.jallcom.2013.12.174 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Chiolerio, Alessandro;Camarchia, Vittorio;Quaglia, Roberto;Pirola, Marco;Pandolfi, Paolo;Pirri, Candido Fabrizio;
10:70:24 Synthesis of dimension-tunable ZnO nanostructures via the design of zinc hydroxide precursors
DOI:10.1007/s00339-010-6158-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Hua, Guomin;Zhang, Lide;Dai, Jun;Hu, Linhua;Dai, Songyuan;
10:70:25 The nanocomposites of zinc oxide/L-amino acid-based chiral poly(ester-imide) via an ultrasonic route: Synthesis, characterization, and thermal properties
DOI:10.1002/app.36686 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:5 AU: Mallakpour, Shadpour;Zeraatpisheh, Fatemeh;
10:70:26 Synthesis of Noble Metal-Doped Cu Nanoparticles by Ultrasonication
DOI:10.2320/matertrans.M2013077 JN:MATERIALS TRANSACTIONS PY:2013
TC:0 AU: Koubu, Hiroaki;Hayashi, Yamato;Fukushima, Jun;Takizawa, Hirotsugu;Narita, Ichihito;Yoshioka, Satoru;
10:71:1 Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO2 nanoparticles
DOI:10.1016/j.jallcom.2014.05.178 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Gomez-Polo, C.;Larumbe, S.;Monge, M.;
10:71:2 Evidence of defect-induced ferromagnetism and its "switch" action in pristine bulk TiO2
DOI:10.1063/1.3562328 JN:APPLIED PHYSICS LETTERS PY:2011
TC:36 AU: Singhal, R. K.;Kumar, Sudhish;Kumari, P.;Xing, Y. T.;Saitovitch, E.;
10:71:3 Signature of strong ferromagnetism and optical properties of Co doped TiO2 nanoparticles
DOI:10.1063/1.3665883 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:33 AU: Santara, Batakrushna;Pal, Bappaditya;Giri, P. K.;
10:71:4 Room temperature ferromagnetism in defective TiO2 nanoparticles: Role of surface and grain boundary oxygen vacancies
DOI:10.1063/1.4833562 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Choudhury, Biswajit;Choudhury, Amarjyoti;
10:71:5 Ferromagnetism at room temperature in Cr-doped anodic titanium dioxide nanotubes
DOI:10.1063/1.4867225 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Liao, Yulong;Zhang, Huaiwu;Li, Jie;Yu, Guoliang;Zhong, Zhiyong;Bai, Feiming;Jia, Lijun;Zhang, Shihong;Zhong, Peng;
10:71:6 Vacancy induced magnetism in SrTiO3
DOI:10.1016/j.jmmm.2011.12.036 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:15 AU: Zhang, Yongjia;Hu, Jifan;Cao, Ensi;Sun, Li;Qin, Hongwei;
10:71:7 Room temperature ferromagnetism in non-magnetic doped TiO2 nanoparticles
DOI:10.1063/1.4795615 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Gomez-Polo, C.;Larumbe, S.;Pastor, J. M.;
10:71:8 Catalytic effect of metal oxides on the oxidation resistance in carbon nanotube-inorganic hybrids
DOI:10.1039/c0jm01129k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:30 AU: Aksel, S.;Eder, D.;
10:71:9 Room-temperature ferromagnetism of Fe-doped TiO2 nanoparticles driven by oxygen vacancy
DOI:10.1016/j.materresbull.2012.11.031 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:6 AU: Patel, Sandeep K. S.;Kurian, Sajith;Gajbhiye, Namdeo S.;
10:71:10 Structural, optical, and ferromagnetic properties of Co-doped TiO2 films annealed in vacuum
DOI:10.1063/1.3319556 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Xu, Jianping;Shi, Shaobo;Li, Lan;Zhang, Xiaosong;Wang, Yaxin;Chen, Ximing;Wang, Jianfeng;Lv, Liya;Zhang, Fengming;Zhong, Wei;
10:71:11 d carrier induced intrinsic room temperature ferromagnetism in Nb:TiO2 film
DOI:10.1063/1.4707378 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Yang, J. Y.;Han, Y. L.;He, L.;Dou, R. F.;Xiong, C. M.;Nie, J. C.;
10:71:12 Ferromagnetic properties in undoped and Cr-doped SnO2 nanowires
DOI:10.1016/j.scriptamat.2010.06.025 JN:SCRIPTA MATERIALIA PY:2010
TC:15 AU: Zhang, Li;Ge, Shihui;Zuo, Yalu;Wang, Juan;Qi, Jing;
10:71:13 Phase dependent room-temperature ferromagnetism of Fe-doped TiO2 nanorods
DOI:10.1063/1.3679071 JN:AIP ADVANCES PY:2012
TC:12 AU: Patel, S. K. S.;Kurian, S.;Gajbhiye, N. S.;
10:71:14 Co environment and magnetic defects in anatase CoxTi1-O-x(2) nanopowders
DOI:10.1063/1.4802819 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Grecu, M. N.;Macovei, D.;Ghica, D.;Logofatu, C.;Valsan, S.;Apostol, N. G.;Lungu, G. A.;Negrea, R. F.;Piticescu, R. R.;
10:71:15 Oxygen deficiency induced ferromagnetism in Cr-doped TiO2 nanorods
DOI:10.1016/j.jmmm.2012.09.043 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:7 AU: Patel, Sandeep K. S.;Gajbhiye, Namdeo S.;
10:71:16 Room temperature ferromagnetism and phonon properties of pure and doped TiO2 nanoparticles
DOI:10.1016/j.jmmm.2013.10.026 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:2 AU: Apostolova, I. N.;Apostolov, A. T.;Bahoosh, S. G.;Wesselinowa, J. M.;
10:71:17 Structural phase analysis, band gap tuning and fluorescence properties of Co doped TiO2 nanoparticles
DOI:10.1016/j.optmat.2014.10.054 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Alamgir;Khan, Wasi;Ahmad, Shabbir;Hassan, M. Mehedi;Naqvi, A. H.;
10:71:18 Cr-doped TiO2 (rutile): Ferromagnetism in bulk form?
DOI:10.1063/1.3490997 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Koohpayeh, S. M.;Williams, A. J.;Abell, J. S.;Lim, J.;Blackburn, E.;
10:71:19 Origins of Electronic Band Gap Reduction in Cr/N Codoped TiO2
DOI:10.1103/PhysRevLett.112.036404 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:2 AU: Cheney, C. Parks;Vilmercati, P.;Martin, E. W.;Chiodi, M.;Gavioli, L.;Regmi, M.;Eres, G.;Callcott, T. A.;Weitering, H. H.;Mannella, N.;
10:71:20 Nano-precipitates induced room temperature ferromagnetism in heavily Nb-doped titania thin films
DOI:10.1016/j.tsf.2013.03.010 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Hsing, Hsiang Chun;Wong, Ming-Show;Wang, Hsiang-Li;Liou, Yung;
10:71:21 Nanoengineering with residual catalyst from CNT templates
DOI:10.1016/j.actamat.2010.04.037 JN:ACTA MATERIALIA PY:2010
TC:8 AU: Eder, Dominik;Motta, Marcelo S.;Windle, Alan H.;
10:71:22 Origin of Magnetism and Quasiparticles Properties in Cr-Doped TiO2
DOI:10.1103/PhysRevLett.110.136402 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:2 AU: Da Pieve, F.;Di Matteo, S.;Rangel, T.;Giantomassi, M.;Lamoen, D.;Rignanese, G. -M.;Gonze, X.;
10:71:23 Kondo-like effect in magnetoresistive CuCo alloys
DOI:10.1103/PhysRevB.82.172410 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Fabietti, L. M.;Ferreyra, J.;Villafuerte, M.;Urreta, S. E.;Heluani, S. P.;
10:71:24 Paramagnetism and clustering in Fe-doped TiO2 nanoparticles
DOI:10.1016/j.jallcom.2009.10.062 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Rodriguez-Torres, C. E.;Stewart, S. J.;Adan, C.;Cabrera, A. F.;
10:71:25 Controlling magnetic properties of Fe3+ doped indium oxide nanocubes by atmospheric annealing method
DOI:10.1063/1.3656992 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Sun, Qingbo;Zeng, Yuping;Jiang, Dongliang;
10:71:26 Coexistence of exchange bias effect and giant magnetoresistance in a Ni/NiO nanogranular sample
DOI:10.1063/1.3626063 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Del Bianco, L.;Spizzo, F.;Tamisari, M.;Castiglioni, A.;
10:71:27 Unexpected magnetic anisotropy induced by oxygen vacancy in anatase TiO2: A first-principles study
DOI:10.1063/1.4864142 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Shao, Bin;He, Ying-fang;Feng, Min;Lu, Yuan;Zuo, Xu;
10:72:1 Improved electrical transport in Al-doped zinc oxide by thermal treatment
DOI:10.1063/1.3269721 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:95 AU: Ruske, F.;Roczen, M.;Lee, K.;Wimmer, M.;Gall, S.;Huepkes, J.;Hrunski, D.;Rech, B.;
10:72:2 Room temperature deposition of Al-doped ZnO films on quartz substrates by radio-frequency magnetron sputtering and effects of thermal annealing
DOI:10.1016/j.tsf.2010.07.048 JN:THIN SOLID FILMS PY:2010
TC:49 AU: Yang, Weifeng;Wu, Zhengyun;Liu, Zhuguang;Pang, Aisuo;Tu, Yu-Li;Feng, Zhe Chuan;
10:72:3 Structural, electrical, photoluminescence and optical properties of n-type conducting, phosphorus-doped ZnO thin films prepared by pulsed laser deposition
DOI:10.1016/j.apsusc.2014.01.037 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Yu, Shihui;Zhang, Weifeng;Li, Lingxia;Dong, Helei;Xu, Dan;Jin, Yuxin;
10:72:4 Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering
DOI:10.1016/j.materresbull.2012.11.104 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:15 AU: Zhang, X. L.;Hui, K. N.;Hui, K. S.;Singh, Jai;
10:72:5 Fast response ultraviolet Ga-doped ZnO based photoconductive detector
DOI:10.1016/j.materresbull.2011.05.032 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:23 AU: Shinde, S. S.;Rajpure, K. Y.;
10:72:6 Effect of thickness on the structural and optical properties of sputtered ZnO and ZnO:Mn thin films
DOI:10.1016/j.jallcom.2014.06.166 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Rajalakshmi, R.;Angappane, S.;
10:72:7 High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering
DOI:10.1016/j.materresbull.2012.10.030 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:16 AU: Zhang, X. L.;Hui, K. S.;Hui, K. N.;
10:72:8 The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
DOI:10.1063/1.4813448 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Gerlach, D.;Wilks, R. G.;Wippler, D.;Wimmer, M.;Lozac'h, M.;Felix, R.;Mueck, A.;Meier, M.;Ueda, S.;Yoshikawa, H.;Gorgoi, M.;Lips, K.;Rech, B.;Sumiya, M.;Huepkes, J.;Kobayashi, K.;Baer, M.;
10:72:9 Defects in ZnO transparent conductors studied by capacitance transients at ZnO/Si interface
DOI:10.1063/1.3556440 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Li, Baoe;Adachi, Yutaka;Li, Jianyong;Okushi, Hedeyo;Sakaguchi, Isao;Ueda, Shigenori;Yoshikawa, Hideki;Yamashita, Yoshiyuki;Senju, Shoichi;Kobayashi, Keisuke;Sumiya, Masatomo;Haneda, Hajime;Ohashi, Naoki;
10:72:10 High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method
DOI:10.1016/j.matlet.2012.03.066 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Xia, Q. X.;Hui, K. S.;Hui, K. N.;Hwang, D. H.;Singh, Jai;Cho, Y. R.;Lee, S. K.;Zhou, W.;Wan, Z. P.;Chi-Nhan Ha Thuc;Son, Y. G.;
10:72:11 Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface
DOI:10.1063/1.3462316 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Baer, M.;Wimmer, M.;Wilks, R. G.;Roczen, M.;Gerlach, D.;Ruske, F.;Lips, K.;Rech, B.;Weinhardt, L.;Blum, M.;Pookpanratana, S.;Krause, S.;Zhang, Y.;Heske, C.;Yang, W.;Denlinger, J. D.;
10:72:12 Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si-O at the expense of Zn-O bonds
DOI:10.1063/1.3644084 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Wimmer, M.;Baer, M.;Gerlach, D.;Wilks, R. G.;Scherf, S.;Lupulescu, C.;Ruske, F.;Felix, R.;Huepkes, J.;Gavrila, G.;Gorgoi, M.;Lips, K.;Eberhardt, W.;Rech, B.;
10:72:13 Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power
DOI:10.1016/j.apsusc.2013.12.071 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Lee, JongWoo;Hui, K. N.;Hui, K. S.;Cho, Y. R.;Chun, Ho-Hwan;
10:72:14 Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al
DOI:10.1063/1.4789599 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:9 AU: Becker, Christiane;Pagels, Marcel;Zachaeus, Carolin;Pollakowski, Beatrix;Beckhoff, Burkhard;Kanngiesser, Birgit;Rech, Bernd;
10:72:15 Mn-doped ZnO transparent conducting films deposited by DC magnetron sputtering
DOI:10.1016/j.matlet.2009.12.015 JN:MATERIALS LETTERS PY:2010
TC:12 AU: Zhang, Hua-fu;Liu, Rui-jin;Liu, Han-fa;Lei, Cheng-xin;Feng, Dong-tai;Yuan, Chang-Kun;
10:72:16 Evolution in morphological, optical, and electronic properties of ZnO:Al thin films undergoing a laser annealing and etching process
DOI:10.1016/j.solmat.2014.02.027 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Charpentier, C.;Boukhicha, R.;Prod'homme, P.;Emeraud, T.;Lerat, J. -F.;i Cabarrocas, P. Roca;Johnson, E. V.;
10:72:17 Crack formation and Zn diffusion in high-temperature processed poly-Si/ZnO:Al stacks
DOI:10.1016/j.tsf.2014.07.025 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Zachaeus, Carolin;Becker, Christiane;Ruske, Florian;Rech, Bernd;
10:72:18 Photoconductive UV detectors based heterostructures of Cd and Mg doped ZnO sol gel thin films
DOI:10.1016/j.matchemphys.2014.02.008 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:3 AU: Vettumperumal, R.;Kalyanaraman, S.;Thangavel, R.;
10:72:19 Excimer laser annealing and chemical texturing of ZnO:Al sputtered at room temperature for photovoltaic applications
DOI:10.1016/j.solmat.2011.05.043 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:12 AU: Johnson, E. V.;Prod'homme, P.;Boniface, C.;Huet, K.;Emeraud, T.;Roca i Cabarrocas, P.;
10:72:20 Contact resistivity measurements of the buried Si-ZnO:Al interface of polycrystalline silicon thin-film solar cells on ZnO:Al
DOI:10.1016/j.tsf.2011.04.197 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Becker, C.;Haeberlein, H.;Schoepe, G.;Huepkes, J.;Rech, B.;
10:72:21 Direct determination of the band offset in atomic layer deposited ZnO/hydrogenated amorphous silicon heterojunctions from X-ray photoelectron spectroscopy valence band spectra
DOI:10.1063/1.4879915 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Korte, L.;Roessler, R.;Pettenkofer, C.;
10:72:22 Synthesis, characterization and photoresponse study of undoped and transition metal (Co, Ni, Mn) doped ZnO thin films
DOI:10.1016/j.mseb.2013.06.015 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:8 AU: Rajalakshmi, R.;Angappane, S.;
10:72:23 Boron diffusion into silicon crystal with SiNx layer as a reaction barrier
DOI:10.1016/j.solmat.2010.07.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:2 AU: Yang, Su-won;Kim, Young Kwan;
10:72:24 Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis
DOI:10.1016/j.materresbull.2012.09.022 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Gaikwad, Rajendra S.;Bhande, Sambhaji S.;Mane, Rajaram S.;Pawar, Bhagwat N.;Gaikwad, Sanjay L.;Han, Sung-Hwan;Joo, Oh-Shim;
10:73:1 Doping Rules and Doping Prototypes in A2BO4 Spinel Oxides
DOI:10.1002/adfm.201101469 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:50 AU: Paudel, Tula R.;Zakutayev, Andriy;Lany, Stephan;d'Avezac, Mayeul;Zunger, Alex;
10:73:2 Cation off-stoichiometry leads to high p-type conductivity and enhanced transparency in Co2ZnO4 and Co2NiO4 thin films
DOI:10.1103/PhysRevB.85.085204 JN:PHYSICAL REVIEW B PY:2012
TC:19 AU: Zakutayev, A.;Paudel, T. R.;Ndione, P. F.;Perkins, J. D.;Lany, S.;Zunger, A.;Ginley, D. S.;
10:73:3 Li-Doped Cr2MnO4 : A New p-Type Transparent Conducting Oxide by Computational Materials Design
DOI:10.1002/adfm.201300807 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:14 AU: Peng, Haowei;Zakutayev, Andriy;Lany, Stephan;Paudel, Tula R.;d'Avezac, Mayeul;Ndione, Paul F.;Perkins, John D.;Ginley, David S.;Nagaraja, Arpun R.;Perry, Nicola H.;Mason, Thomas O.;Zunger, Alex;
10:73:4 Universal Electrostatic Origin of Cation Ordering in A(2)BO(4) Spinel Oxides
DOI:10.1021/ja2034602 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:18 AU: Stevanovic, Vladan;d'Avezac, Mayeul;Zunger, Alex;
10:73:5 Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels
DOI:10.1103/PhysRevB.84.205207 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Perkins, J. D.;Paudel, T. R.;Zakutayev, A.;Ndione, P. F.;Parilla, P. A.;Young, D. L.;Lany, S.;Ginley, D. S.;Zunger, A.;Perry, N. H.;Tang, Y.;Grayson, M.;Mason, T. O.;Bettinger, J. S.;Shi, Y.;Toney, M. F.;
10:73:6 Band or Polaron: The Hole Conduction Mechanism in the p-Type Spinel Rh2ZnO4
DOI:10.1111/j.1551-2916.2011.04771.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:17 AU: Nagaraja, Arpun R.;Perry, Nicola H.;Mason, Thomas O.;Tang, Yang;Grayson, Matthew;Paudel, Tula R.;Lany, Stephan;Zunger, Alex;
10:73:7 Simple Point-Ion Electrostatic Model Explains the Cation Distribution in Spinel Oxides
DOI:10.1103/PhysRevLett.105.075501 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:12 AU: Stevanovic, Vladan;d'Avezac, Mayeul;Zunger, Alex;
10:73:8 Classification of spinel structures based on first-principles cluster expansion analysis
DOI:10.1103/PhysRevB.81.054114 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Seko, Atsuto;Oba, Fumiyasu;Tanaka, Isao;
10:73:9 Asymmetric cation nonstoichiometry in spinels: Site occupancy in Co2ZnO4 and Rh2ZnO4
DOI:10.1103/PhysRevB.84.064109 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Paudel, Tula R.;Lany, Stephan;d'Avezac, Mayeul;Zunger, Alex;Perry, Nicola H.;Nagaraja, Arpun R.;Mason, Thomas O.;Bettinger, Joanna S.;Shi, Yezhou;Toney, Michael F.;
10:73:10 Using design principles to systematically plan the synthesis of hole-conducting transparent oxides: Cu3VO4 and Ag3VO4 as a case study
DOI:10.1103/PhysRevB.84.165116 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: Trimarchi, Giancarlo;Peng, Haowei;Im, Jino;Freeman, Arthur J.;Cloet, Veerle;Raw, Adam;Poeppelmeier, Kenneth R.;Biswas, Koushik;Lany, Stephan;Zunger, Alex;
10:73:11 Control of the Electrical Properties in Spinel Oxides by Manipulating the Cation Disorder
DOI:10.1002/adfm.201302535 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:11 AU: Ndione, Paul F.;Shi, Yezhou;Stevanovic, Vladan;Lany, Stephan;Zakutayev, Andriy;Parilla, Philip A.;Perkins, John D.;Berry, Joseph J.;Ginley, David S.;Toney, Michael F.;
10:73:12 Experimental Characterization of a Theoretically Designed Candidate p-Type Transparent Conducting Oxide: Li-Doped Cr2MnO4
DOI:10.1021/cm501974t JN:CHEMISTRY OF MATERIALS PY:2014
TC:4 AU: Nagaraja, Arpun R.;Stone, Kevin H.;Toney, Michael F.;Peng, Haowei;Lany, Stephan;Mason, Thomas O.;
10:73:13 Diagrammatic Separation of Different Crystal Structures of A(2)BX(4) Compounds Without Energy Minimization: A Pseudopotential Orbital Radii Approach
DOI:10.1002/adfm.200901811 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:13 AU: Zhang, Xiuwen;Zunger, Alex;
10:73:14 Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes
DOI:10.1063/1.4861648 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Schein, Friedrich-Leonhard;Winter, Markus;Boentgen, Tammo;von Wenckstern, Holger;Grundmann, Marius;
10:73:15 Phase Equilibria of the Zinc Oxide-Cobalt Oxide System in Air
DOI:10.1111/jace.12103 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:4 AU: Perry, Nicola H.;Mason, Thomas O.;
10:73:16 Calculated properties of point native defects and p-type conductivity of ZnRh2O4
DOI:10.1063/1.4816000 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Volnianska, O.;Boguslawski, P.;
10:73:17 Atomic-Scale Imaging of Cation Ordering in Inverse Spinel Zn2SnO4 Nanowires
DOI:10.1021/nl503077y JN:NANO LETTERS PY:2014
TC:0 AU: Bao, Lihong;Zang, Jianfeng;Wang, Guofeng;Li, Xiaodong;
10:73:18 Transport and band structure studies of crystalline ZnRh2O4
DOI:10.1103/PhysRevB.81.075112 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Mansourian-Hadavi, Negar;Wansom, Supaporn;Perry, Nicola H.;Nagaraja, Arpun R.;Mason, Thomas O.;Ye, Lin-hui;Freeman, Arthur J.;
10:73:19 Thermodynamics and structures of oxide crystals by a systematic set of first principles calculations
DOI:10.1039/c0jm01932a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:3 AU: Tanaka, Isao;Togo, Atsushi;Seko, Atsuto;Oba, Fumiyasu;Koyama, Yukinori;Kuwabara, Akihide;
10:73:20 Hybrid density functional calculations of the defect properties of ZnO:Rh and ZnO:Ir
DOI:10.1016/j.tsf.2013.08.013 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Ramo, David Munoz;Bristowe, Paul D.;
10:73:21 Cation disorder in MgX2O4 (X = Al, Ga, In) spinels from first principles
DOI:10.1103/PhysRevB.86.024203 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Jiang, Chao;Sickafus, Kurt E.;Stanek, Christopher R.;Rudin, Sven P.;Uberuaga, Blas P.;
10:73:22 Self-Doping and Electrical Conductivity in Spinel Oxides: Experimental Validation of Doping Rules
DOI:10.1021/cm404031k JN:CHEMISTRY OF MATERIALS PY:2014
TC:4 AU: Shi, Yezhou;Ndione, Paul F.;Lim, Linda Y.;Sokaras, Dimosthenis;Weng, Tsu-Chien;Nagaraja, Arpun R.;Karydas, Andreas G.;Perkins, John D.;Mason, Thomas O.;Ginley, David S.;Zunger, Alex;Toney, Michael F.;
10:73:23 Exploring Structures and Phase Relationships of Ceramics from First Principles
DOI:10.1111/j.1551-2916.2010.03759.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:8 AU: Seko, Atsuto;
10:73:24 Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide
DOI:10.1063/1.3415543 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Kim, SeonHoo;Cianfrone, J. A.;Sadik, P.;Kim, K.-W.;Ivill, M.;Norton, D. P.;
10:73:25 Structural, Optical, and Transport Properties of alpha- and beta-Ag3VO4
DOI:10.1021/cm301119c JN:CHEMISTRY OF MATERIALS PY:2012
TC:3 AU: Cloet, V.;Raw, A.;Poeppelmeier, K. R.;Trimarchi, G.;Peng, H.;Im, J.;Freeman, A. J.;Perry, N. H.;Mason, T. O.;Zakutayev, A.;Ndione, P. F.;Ginley, D. S.;Perkins, J. D.;
10:73:26 How to get superhard MnB2: a first-principles study
DOI:10.1039/c2jm31385e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:2 AU: Fan, Jing;Bao, Kuo;Jin, Xilian;Meng, Xiangxu;Duan, Defang;Liu, Bingbing;Cui, Tian;
10:73:27 Electronic and optical properties of Ga3-xIn5+xSn2O16: An experimental and theoretical study
DOI:10.1063/1.4861130 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Dolgonos, Alex;Lam, Kanber;Poeppelmeier, Kenneth R.;Freeman, Arthur J.;Mason, Thomas O.;
10:74:1 Ultraviolet ZnO Nanorod Photosensors
DOI:10.1021/la902171j JN:LANGMUIR PY:2010
TC:71 AU: Su, Y. K.;Peng, S. M.;Ji, L. W.;Wu, C. Z.;Cheng, W. B.;Liu, C. H.;
10:74:2 Structural, optical and charge transport study of rutile TiO2 nanocrystals at two calcination temperatures
DOI:10.1016/j.jallcom.2011.05.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:43 AU: Maurya, Archana;Chauhan, Pratima;Mishra, Sheo K.;Srivastava, Rajneesh K.;
10:74:3 Structural, Photoconductivity and Photoluminescence Characterization of Cadmium Sulfide Quantum Dots Prepared by a Co-precipitation Method
DOI:10.1007/s13391-011-0305-6 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:26 AU: Mishra, Sheo K.;Srivastava, Rajneesh K.;Prakash, S. G.;Yadav, Raghvendra S.;Panday, A. C.;
10:74:4 Optical and magnetic properties of Fe2O3 nanoparticles synthesized by laser ablation/fragmentation technique in different liquid media
DOI:10.1016/j.apsusc.2013.10.009 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Pandey, B. K.;Shahi, A. K.;Shah, Jyoti;Kotnala, R. K.;Gopal, Ram;
10:74:5 ZnO nanoparticles: Structural, optical and photoconductivity characteristics
DOI:10.1016/j.jallcom.2012.06.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:25 AU: Mishra, Sheo K.;Srivastava, Rajneesh K.;Prakash, S. G.;
10:74:6 Study of structural transformation in TiO2 nanoparticles and its optical properties
DOI:10.1016/j.jallcom.2012.09.012 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:28 AU: Tripathi, Anand Kumar;Singh, Manish Kumar;Mathpal, Mohan Chandra;Mishra, Sheo Kumar;Agarwal, Arvind;
10:74:7 Structural, optical and photoconductivity characteristics of manganese doped cadmium sulfide nanoparticles synthesized by co-precipitation method
DOI:10.1016/j.jallcom.2011.10.003 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:12 AU: Mishra, Sheo K.;Srivastava, Rajneesh K.;Prakash, S. G.;Yadav, Raghvendra S.;Panday, A. C.;
10:74:8 Effect of Indium Doping and Annealing on Photoconducting Property of Wurtzite Type CdS
DOI:10.1007/s13391-012-2011-4 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:6 AU: Singh, Vineet Kumar;Chauhan, Pratima;Mishra, Sheo Kumar;Srivastava, Rajneesh K.;
10:74:9 Synthesis of CdS nanoparticles with enhanced optical properties
DOI:10.1016/j.matchar.2010.10.009 JN:MATERIALS CHARACTERIZATION PY:2011
TC:22 AU: Singh, Vineet;Sharma, P. K.;Chauhan, Pratima;
10:74:10 Surfactant mediated phase transformation of CdS nanoparticles
DOI:10.1016/j.matchemphys.2010.01.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:18 AU: Singh, Vineet;Sharma, Prashant K.;Chauhan, Pratima;
10:74:11 Synthesis based structural and optical behavior of anatase TiO2 nanoparticles
DOI:10.1016/j.mssp.2014.02.041 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:6 AU: Tripathi, Anand Kumar;Mathpal, Mohan Chandra;Kumar, Promod;Singh, Manish Kumar;Mishra, Sheo Kumar;Srivastava, Rajneesh Kumar;Chung, Jin Suk;Verma, Govind;Ahmad, M. M.;Agarwal, Arvind;
10:74:12 Structural, optical and photoconductivity study of ZnS nanoparticles synthesized by a low temperature solid state reaction method
DOI:10.1016/j.mssp.2013.12.028 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Farooqi, Mohd Mubashshir Hasan;Srivastava, Rajneesh K.;
10:74:13 Defect-dominated optical emission and enhanced ultraviolet photoconductivity properties of ZnO nanorods synthesized by simple and catalyst-free approach
DOI:10.1007/s00339-013-7959-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Mishra, Sheo K.;Bayan, Sayan;Chakraborty, Purushottam;Srivastava, Rajneesh K.;
10:74:14 Dumbbell shaped nickel nanocrystals synthesized by a laser induced fragmentation method
DOI:10.1039/c1jm12320c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:17 AU: Singh, Manish Kumar;Agarwal, Arvind;Gopal, Ram;Swarnkar, Raj Kumar;Kotnala, Ravinder Kumar;
10:74:15 Fabrication of UV sensor based on electrospun composite fibers
DOI:10.1016/j.matlet.2012.11.005 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Anitha, S.;Brabu, B.;Rajesh, K. P.;Natarajan, T. S.;
10:74:16 Cyclic Voltammetric and Chronoamperometric Deposition of CdS
DOI:10.2320/matertrans.M2013125 JN:MATERIALS TRANSACTIONS PY:2013
TC:1 AU: Kim, Yongkuk;Jung, Jaegoo;Kim, Seunghun;Chae, Won-Seok;
10:74:17 ZnO nanorod-based UV photodetection and the role of persistent photoconductivity
DOI:10.1080/14786435.2012.698761 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:5 AU: Bayan, S.;Mohanta, D.;
10:74:18 Enhanced vacuum-photoconductivity of chemically synthesized ZnO nanostructures
DOI:10.1080/14786435.2013.869367 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Bayan, Sayan;Mishra, Sheo K.;Chakraborty, Purushottam;Mohanta, Dambarudhar;Shankar, Ravi;Srivastava, Rajneesh K.;
10:74:19 Structural and thermoluminescence properties of undoped and Fe-doped-TiO2 nanopowders processed by sol-gel method
DOI:10.1007/s11051-010-0002-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:5 AU: Cernea, Marin;Secu, Mihail;Secu, Corina Elisabeta;Baibarac, Mihaela;Vasile, Bogdan S.;
10:74:20 In-situ preparation of high optical quality ZnO nanoparticles in nanofibrous PVA matrix
DOI:10.1016/j.matlet.2011.06.008 JN:MATERIALS LETTERS PY:2011
TC:4 AU: Anitha, S.;Thiruvadigal, D. John;Natarajan, T. S.;
10:74:21 Effect of Cu concentration on the photoconductivity properties of ZnS nanoparticles synthesized by co-precipitation method
DOI:10.1016/j.mssp.2013.06.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Srivastava, Rajneesh K.;Pandey, Nitin;Mishra, Sheo K.;
10:74:22 3D CFD Simulations of MOCVD Synthesis System of Titanium Dioxide Nanoparticles
DOI:10.1155/2013/123256 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Othman, Siti Hajar;Rashid, Suraya Abdul;Ghazi, Tinia Idaty Mohd;Abdullah, Norhafizah;
10:74:23 Enhancement of persistent photoconductivity of ZnO nanorods under polyvinyl alcohol encapsulation
DOI:10.1016/j.mssp.2014.03.039 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Bayan, Sayan;Mishra, Sheo K.;Satpati, Biswarup;Chakraborty, Purushottam;
10:74:24 Fluorescence quenching in PVK:ZnSe nanocomposite structure
DOI:10.1016/j.synthmet.2014.05.010 JN:SYNTHETIC METALS PY:2014
TC:1 AU: Ben Hamed, Zied;Benchaabane, Aida;Kouki, Faycal;Sanhoury, Mohamed Abderahmen;Bouchriha, Habib;
10:74:25 Template-free synthesis of mesoporous single-crystal CuO particles with dumbbell-shaped morphology
DOI:10.1016/j.matlet.2014.06.045 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Ghosh, Sourav;Roy, Mouni;Naskar, Milan Kanti;
10:74:26 Non-toxic silver iodide (AgI) quantum dots sensitized solar cells
DOI:10.1016/j.materresbull.2014.07.009 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Moosakhani, S.;Alvani, A. A. Sabbagh;Sarabi, A. A.;Sameie, H.;Salimi, R.;Kiani, S.;Ebrahimi, Y.;
10:74:27 Study on crystallinity and morphology controlling of titania using acrylamide gel method and their photocatalytic properties
DOI:10.1016/j.apt.2014.05.016 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:0 AU: Saket-Oskoui, M.;Khatamian, M.;Nofouzi, K.;Yavari, A.;
10:74:28 Laser pulse induced micropatterning on sandwiched thin films
DOI:10.1016/j.apsusc.2013.04.101 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Wei, Jingsong;Liu, Qian;Xiao, Mufei;
10:74:29 A study on defect controlled morphology of Organic/Inorganic composite nanofibers with different heat flow rates
DOI:10.1016/j.matlet.2010.09.070 JN:MATERIALS LETTERS PY:2011
TC:9 AU: Anitha, S.;Thiruvadigal, D. John;Natarajan, T. S.;
10:74:30 Morphology and crystalline phase-controllable synthesis of titania nanoparticles via acrylamide gel method and their photocatalytic properties
DOI:10.1016/j.mssp.2014.06.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Saket-Oskoui, M.;Khatamian, M.;
10:74:31 Transforming insulating rutile single crystal into a fully ordered nanometer-thick transparent semiconductor
DOI:10.1088/0957-4484/21/41/415303 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Singh, A.;Haenisch, J.;Matias, V.;Ronning, F.;Mara, N.;Pohl, D.;Rellinghaus, B.;Reagor, D.;
10:75:1 Synthesis, Characterization, and Applications of ZnO Nanowires
DOI:10.1155/2012/624520 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:36 AU: Zhang, Yangyang;Ram, Manoj K.;Stefanakos, Elias K.;Goswami, D. Yogi;
10:75:2 Effect of nickel doping on the photocatalytic activity of ZnO thin films under UV and visible light
DOI:10.1016/j.apsusc.2011.04.119 JN:APPLIED SURFACE SCIENCE PY:2011
TC:45 AU: Kaneva, Nina V.;Dimitrov, Dimitre T.;Dushkin, Ceco D.;
10:75:3 One dimensional-ZnO nanostructures: Synthesis, properties and environmental applications
DOI:10.1016/j.mssp.2013.06.017 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:22 AU: Udom, Innocent;Ram, Manoj K.;Stefanakos, Elias K.;Hepp, Aloysius F.;Goswami, D. Yogi;
10:75:4 Improved seedless hydrothermal synthesis of dense and ultralong ZnO nanowires
DOI:10.1088/0957-4484/22/24/245601 JN:NANOTECHNOLOGY PY:2011
TC:52 AU: Tian, Jing-Hua;Hu, Jie;Li, Si-Si;Zhang, Fan;Liu, Jun;Shi, Jian;Li, Xin;Tian, Zhong-Qun;Chen, Yong;
10:75:5 Control of the doping concentration, morphology and optoelectronic properties of vertically aligned chlorine-doped ZnO nanowires
DOI:10.1016/j.actamat.2011.07.037 JN:ACTA MATERIALIA PY:2011
TC:25 AU: Fan, Jiandong;Shavel, Alexey;Zamani, Reza;Fabrega, Cristian;Rousset, Jean;Haller, Servane;Gueell, Frank;Carrete, Alex;Andreu, Teresa;Arbiol, Jordi;Ramon Morante, Joan;Cabot, Andreu;
10:75:6 Low-temperature, catalyst-free vapor solid growth of ultralong ZnO nanowires
DOI:10.1016/j.matchemphys.2012.07.008 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Zhao, Xiaoli;Shaymurat, Talgar;Pei, Tengfei;Bai, Lu;Cai, Bin;Tong, Yanhong;Tang, Qingxin;Liu, Yichun;
10:75:7 The characteristic of the ZnO nanowire morphology grown by the hydrothermal method on various surface-treated seed layers
DOI:10.1016/j.matlet.2010.10.092 JN:MATERIALS LETTERS PY:2011
TC:17 AU: Kim, Joon-Yub;Cho, Jin Woo;Kim, Sung Hyun;
10:75:8 Structure and Opto-electrochemical Properties of ZnO Nanowires Grown on n-Si Substrate
DOI:10.1021/la200584j JN:LANGMUIR PY:2011
TC:20 AU: Ladanov, Mikhail;Ram, Manoj K.;Matthews, Garrett;Kumar, Ashok;
10:75:9 Fabrication of p-type ZnO nanowires based heterojunction diode
DOI:10.1016/j.matchemphys.2010.02.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:23 AU: Das, Sachindra Nath;Choi, Ji-Hyuk;Kar, Jyoti Prakash;Lee, Tae Il;Myoung, Jae-Min;
10:75:10 Zinc oxide nanorod mediated visible light photoinactivation of model microbes in water
DOI:10.1088/0957-4484/22/21/215703 JN:NANOTECHNOLOGY PY:2011
TC:25 AU: Sapkota, Ajaya;Anceno, Alfredo J.;Baruah, Sunandan;Shipin, Oleg V.;Dutta, Joydeep;
10:75:11 Radially Oriented ZnO Nanowires on Flexible Poly-L-Lactide Nanofibers for Continuous-Flow Photocatalytic Water Purification
DOI:10.1111/j.1551-2916.2010.03986.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:20 AU: Sugunan, Abhilash;Guduru, Veerendra K.;Uheida, Abdusalam;Toprak, Muhammet S.;Muhammed, Mamoun;
10:75:12 Synthesis, characterization, and dispersion behavior of ZnO/Ag nanocomposites
DOI:10.1016/j.apt.2012.06.006 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:6 AU: Meng, Alan;Sun, Shibin;Li, Zhenjiang;Han, Junkai;
10:75:13 A simple photolytic reactor employing Ag-doped ZnO nanowires for water purification
DOI:10.1016/j.tsf.2014.05.057 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Udom, Innocent;Zhang, Yangyang;Ram, Manoj K.;Stefanakos, Elias K.;Hepp, Aloysius F.;Elzein, Radwan;Schlaf, Rudy;Goswami, D. Yogi;
10:75:14 Assessment of absorber composition and nanocrystalline phases in CuInS2 based photovoltaic technologies by ex-situ/in-situ resonant Raman scattering measurements
DOI:10.1016/j.solmat.2010.11.014 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:12 AU: Izquierdo-Roca, V.;Shavel, A.;Saucedo, E.;Jaime-Ferrer, S.;Alvarez-Garcia, J.;Cabot, A.;Perez-Rodriguez, A.;Bermudez, V.;Morante, J. R.;
10:75:15 Comparative Study of the Photocatalytic Activity of Semiconductor Nanostructures and Their Hybrid Metal Nanocomposites on the Photodegradation of Malathion
DOI:10.1155/2012/524123 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:5 AU: Fouad, Dina Mamdouh;Mohamed, Mona Bakr;
10:75:16 A facile shape-selective growth of ZnO nanotips and graded nanowires from its oriented nanorods in a saturated ZnS solution
DOI:10.1088/0957-4484/21/50/505603 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Wang, Juan;Luo, Hong-fu;Chen, Tao;Yuan, Zhi-hao;
10:75:17 Ultrasensitive Diagnosis for an Anthrax-Protective Antigen Based on a Polyvalent Directed Peptide Polymer Coupled to Zinc Oxide Nanorods
DOI:10.1002/adma.201103284 JN:ADVANCED MATERIALS PY:2011
TC:7 AU: Park, Hye-Yeon;Gedi, Vinayakumar;Kim, Joungmok;Park, Hae-Chul;Han, Sung-Hwan;Yoon, Moon-Young;
10:75:18 Diameter and location control of ZnO nanowires using electrodeposition and sodium citrate
DOI:10.1007/s00339-012-7538-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Lifson, Max L.;Levey, Christopher G.;Gibson, Ursula J.;
10:75:19 Preparation, Characterization, and Mechanistic Understanding of Pd-Decorated ZnO Nanowires for Ethanol Sensing
DOI:10.1155/2013/297676 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Deng, Xiao;Sang, Shengbo;Li, Pengwei;Li, Gang;Gao, Fanqin;Sun, Yongjiao;Zhang, Wendong;Hu, Jie;
10:76:1 Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films
DOI:10.1103/PhysRevLett.105.127403 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:50 AU: Hwang, Sung Won;Shin, Dong Hee;Kim, Chang Oh;Hong, Seung Hui;Kim, Min Choul;Kim, Jungkil;Lim, Keun Yong;Kim, Sung;Choi, Suk-Ho;Ahn, Kwang Jun;Kim, Gunn;Sim, Sung Hyun;Hong, Byung Hee;
10:76:2 Surface plasmon enhanced band edge luminescence of ZnO nanorods by capping Au nanoparticles
DOI:10.1063/1.3323091 JN:APPLIED PHYSICS LETTERS PY:2010
TC:83 AU: Cheng, C. W.;Sie, E. J.;Liu, B.;Huan, C. H. A.;Sum, T. C.;Sun, H. D.;Fan, H. J.;
10:76:3 A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer
DOI:10.1088/0957-4484/25/5/055501 JN:NANOTECHNOLOGY PY:2014
TC:8 AU: Xu, Qiang;Cheng, Qijin;Zhong, Jinxiang;Cai, Weiwei;Zhang, Zifeng;Wu, Zhengyun;Zhang, Fengyan;
10:76:4 Evidence for coupling between exciton emissions and surface plasmon in Ni-coated ZnO nanowires
DOI:10.1088/0957-4484/23/42/425201 JN:NANOTECHNOLOGY PY:2012
TC:11 AU: Ren, Q. J.;Filippov, S.;Chen, S. L.;Devika, M.;Reddy, N. Koteeswara;Tu, C. W.;Chen, W. M.;Buyanova, I. A.;
10:76:5 Investigation of enhanced ultraviolet emission from different Ti-capped ZnO structures via surface passivation and surface plasmon coupling
DOI:10.1063/1.3489511 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Song, Jie;An, Xiuyun;Zhou, Jinyuan;Liu, Yanxia;Wang, Wei;Li, Xiaodong;Lan, Wei;Xie, Erqing;
10:76:6 Metal enhanced photoluminescence from Al-capped ZnMgO films: The roles of plasmonic coupling and non-radiative recombination
DOI:10.1063/1.3693396 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Wang, Yanjie;He, Haiping;Zhang, Yalin;Sun, Luwei;Hu, Liang;Wu, Kewei;Huang, Jingyun;Ye, Zhizhen;
10:76:7 Enhanced near band edge emission of ZnO via surface plasmon resonance of aluminum nanoparticles
DOI:10.1063/1.3607270 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Wu, Kewei;Lu, Yangfan;He, Haiping;Huang, Jingyun;Zhao, Binghui;Ye, Zhizhen;
10:76:8 Hybrid quadrupolar resonances stimulated at short wavelengths using coupled plasmonic silver nanoparticle aggregation
DOI:10.1039/c3tc31910e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Jiang, Ming-Ming;Chen, Hong-Yu;Li, Bing-Hui;Liu, Ke-Wei;Shan, Chong-Xin;Shen, De-Zhen;
10:76:9 Direct Resonant Coupling of Al Surface Plasmon for Ultraviolet Photoluminescence Enhancement of ZnO Microrods
DOI:10.1021/am505492r JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Lu, Junfeng;Li, Jitao;Xu, Chunxiang;Li, Yu;Dai, Jun;Wang, Yueyue;Lin, Yi;Wang, Shufeng;
10:76:10 CTAB-mediated synthesis and characterization of ZnO/Ag core-shell nanocomposites
DOI:10.1016/j.jallcom.2014.05.209 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Khan, Majid;Wei, Chengsha;Chen, Mingming;Tao, Jiaojiao;Huang, Ningdong;Qi, Zeming;Li, Liangbin;
10:76:11 Turning ZnO into an Efficient Energy Upconversion Material by Defect Engineering
DOI:10.1002/adfm.201400220 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:8 AU: Stehr, Jan E.;Chen, Shula L.;Reddy, Nandanapalli Koteeswara;Tu, Charles W.;Chen, Weimin M.;Buyanova, Irina A.;
10:76:12 Improving metal-enhanced photoluminescence by micro-pattern of metal nanoparticles: a case study of Ag-ZnCdO system
DOI:10.1007/s00339-014-8372-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Song, Shiyan;Sun, Luwei;He, Haiping;Ye, Zhizhen;
10:76:13 Enhancement of the near-band-edge photoluminescence of ZnO nanowires: Important role of hydrogen incorporation versus plasmon resonances
DOI:10.1063/1.3569951 JN:APPLIED PHYSICS LETTERS PY:2011
TC:26 AU: Dev, A.;Richters, J. P.;Sartor, J.;Kalt, H.;Gutowski, J.;Voss, T.;
10:76:14 Dual optical functionality of local surface plasmon resonance for RuO2 nanoparticle-ZnO nanorod hybrids grown by atomic layer deposition
DOI:10.1039/c2jm31513k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:6 AU: Bang, Seokhwan;Lee, Seungjun;Park, Taeyoung;Ko, Youngbin;Shin, Seokyoon;Yim, Sang-Youp;Seo, Hyungtak;Jeon, Hyeongtag;
10:76:15 Plasmonic enhancement of dual mode fluorescence in a silver nano-antenna-ZnO:Er3+ hybrid nanostructure
DOI:10.1039/c4tc01479k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Das, Rupali;Phadke, Parikshit;Khichar, Naveen;Chawla, Santa;
10:76:16 Hybrid nanostructure heterojunction solar cells fabricated using vertically aligned ZnO nanotubes grown on reduced graphene oxide
DOI:10.1088/0957-4484/22/40/405401 JN:NANOTECHNOLOGY PY:2011
TC:11 AU: Yang, Kaikun;Xu, Congkang;Huang, Liwei;Zou, Lianfeng;Wang, Howard;
10:76:17 Defect properties of ZnO nanowires revealed from an optically detected magnetic resonance study
DOI:10.1088/0957-4484/24/1/015701 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Stehr, J. E.;Chen, S. L.;Filippov, S.;Devika, M.;Reddy, N. Koteeswara;Tu, C. W.;Chen, W. M.;Buyanova, I. A.;
10:76:18 Tunable enhancement of exciton emission from MgZnO by hybridized quadrupole plasmons in Ag nanoparticle aggregation
DOI:10.1063/1.4867777 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Chen, Hong-Yu;Liu, Ke-Wei;Jiang, Ming-Ming;Zhang, Zhen-Zhong;Xie, Xiu-Hua;Wang, Deng-Kui;Liu, Lei;Li, Bing-Hui;Zhao, Dong-Xu;Shan, Chong-Xin;Shen, De-Zhen;
10:76:19 Effects of Ni-coating on ZnO nanowires: A Raman scattering study
DOI:10.1063/1.4807912 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Filippov, S.;Wang, X. J.;Devika, M.;Reddy, N. Koteeswara;Tu, C. W.;Chen, W. M.;Buyanova, I. A.;
10:76:20 Comment on "Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films"
DOI:10.1103/PhysRevLett.107.159701 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:2 AU: Yang, Wei;Hu, Xiaodong;
10:76:21 Comment on "Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films" Reply
DOI:10.1103/PhysRevLett.107.159702 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:0 AU: Ahn, Kwang Jun;Hwang, Sung Won;Shin, Dong Hee;Kim, Chang Oh;Hong, Seung Hui;Kim, Min Choul;Kim, Jungkil;Lim, Keun Yong;Kim, Sung;Choi, Suk-Ho;Kim, Gunn;Hong, Byung Hee;
10:77:1 Room temperature ferromagnetism in pristine MgO thin films
DOI:10.1063/1.3447376 JN:APPLIED PHYSICS LETTERS PY:2010
TC:46 AU: Araujo, C. Moyses;Kapilashrami, Mukes;Jun, Xu;Jayakumar, O. D.;Nagar, Sandeep;Wu, Yan;Arhammar, Cecilia;Johansson, Borje;Belova, Lyubov;Ahuja, Rajeev;Gehring, Gillian A.;Rao, K. V.;
10:77:2 Ferromagnetism in transparent thin films of MgO
DOI:10.1103/PhysRevB.82.024405 JN:PHYSICAL REVIEW B PY:2010
TC:32 AU: Martinez-Boubeta, C.;Beltran, J. I.;Balcells, Ll.;Konstantinovic, Z.;Valencia, S.;Schmitz, D.;Arbiol, J.;Estrade, S.;Cornil, J.;Martinez, B.;
10:77:3 Defect-induced magnetism in chemically synthesized nanoscale sheets of MgO
DOI:10.1103/PhysRevB.83.161201 JN:PHYSICAL REVIEW B PY:2011
TC:18 AU: Maoz, Ben M.;Tirosh, Einat;Bar Sadan, Maya;Markovich, Gil;
10:77:4 Polaronic distortion and vacancy-induced magnetism in MgO
DOI:10.1103/PhysRevB.81.092403 JN:PHYSICAL REVIEW B PY:2010
TC:29 AU: Droghetti, A.;Pemmaraju, C. D.;Sanvito, S.;
10:77:5 Oxygen vacancy enhanced room temperature magnetism in Al-doped MgO nanoparticles
DOI:10.1063/1.4804425 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Mishra, Debabrata;Mandal, Balaji P.;Mukherjee, Rupam;Naik, Ratna;Lawes, Gavin;Nadgorny, Boris;
10:77:6 Defect and adsorbate induced ferromagnetic spin-order in magnesium oxide nanocrystallites
DOI:10.1063/1.4712058 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Kumar, Ashok;Kumar, Jitendra;Priya, Shashank;
10:77:7 Magnetic properties of the glass-ceramic Mg2-xMxAl4Si5O18 (M=Ni and Fe) system
DOI:10.1016/j.ceramint.2014.03.032 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Kirat, G.;Aksan, M. A.;
10:77:8 Magnetic hysteresis behavior and magnetic pinning in a d(0) ferromagnet/superconductor nanostructure
DOI:10.1063/1.4865876 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Uchino, Takashi;Uenaka, Yuki;Soma, Haruka;Sakurai, Takahiro;Ohta, Hitoshi;
10:77:9 Highly defective MgO nanosheets from colloidal self-assembly
DOI:10.1039/c1jm10181a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Maoz, Ben M.;Tirosh, Einat;Bar Sadan, Maya;Popov, Inna;Rosenberg, Yuri;Markovich, Gil;
10:77:10 Spin-polarized ground states and ferromagnetic order induced by low-coordinated surface atoms and defects in nanoscale magnesium oxide
DOI:10.1103/PhysRevB.87.144414 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Uchino, Takashi;Yoko, Toshinobu;
10:77:11 Hole bipolaron formation at (100) MgO/CaO epitaxial interface
DOI:10.1103/PhysRevB.89.125118 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Bondarenko, N.;Eriksson, O.;Skorodumova, N. V.;
10:77:12 Aging of magnetic properties in MgO films
DOI:10.1063/1.3527963 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Balcells, Ll.;Beltran, J. I.;Martinez-Boubeta, C.;Konstantinovic, Z.;Arbiol, J.;Martinez, B.;
10:77:13 Origin of room temperature ferromagnetism in MgO films
DOI:10.1063/1.4793308 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Li, Jing;Jiang, Yinzhu;Li, Yong;Yang, Deren;Xu, Yongbing;Yan, Mi;
10:77:14 Symmetry and nonstoichiometry as possible origins of ferromagnetism in nanoscale oxides
DOI:10.1103/PhysRevB.85.012407 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Uchino, Takashi;Yoko, Toshinobu;
10:77:15 Room temperature ferromagnetism of amorphous MgO films prepared by pulsed laser deposition
DOI:10.1007/s00339-013-7922-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Li, Jing;Jiang, Yinzhu;Bai, Guohua;Ma, Tianyu;Yang, Deren;Du, Youwei;Yan, Mi;
10:77:16 Observation of magnetic behavior at low temperature in the Mg2Al4Si5O18 system
DOI:10.1016/j.jallcom.2013.06.164 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Kirat, G.;Aksan, M. A.;
10:77:17 Photoexcitation, trapping, and recombination processes of the F-type centers in lasing MgO microcrystals
DOI:10.1103/PhysRevB.83.195108 JN:PHYSICAL REVIEW B PY:2011
TC:8 AU: Uenaka, Y.;Uchino, T.;
10:77:18 Energetics and magnetic properties of V-doped MgO bulk and (001) surface: A GGA, GGA plus U, and hybrid density functional study
DOI:10.1103/PhysRevB.82.134406 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Arhammar, C.;Araujo, C. Moyses;Rao, K. V.;Norgren, Susanne;Johansson, Borje;Ahuja, Rajeev;
10:77:19 Ferromagnetism in IV main group element (C) and transition metal (Mn) doped MgO: A density functional perspective
DOI:10.1063/1.3625411 JN:AIP ADVANCES PY:2011
TC:5 AU: Sharma, Vinit;Pilania, Ghanshyam;Lowther, J. E.;
10:77:20 Degradation Resistance of Cordierite Diesel Particulate Filters to Diesel Fuel Ash Deposits
DOI:10.1111/j.1551-2916.2011.04997.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:4 AU: Pomeroy, M. J.;O'Sullivan, D.;Hampshire, S.;Murtagh, M. J.;
10:77:21 Room temperature ferromagnetic properties of Cu2O microcrystals
DOI:10.1016/j.jallcom.2013.07.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Prabhakaran, G.;Murugan, Ramaswamy;
10:77:22 Magnetization asymmetry of type-II superconductors in high magnetic fields
DOI:10.1063/1.3544038 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Gokhfeld, D. M.;Balaev, D. A.;Petrov, M. I.;Popkov, S. I.;Shaykhutdinov, K. A.;Val'kov, V. V.;
10:77:23 Possible room temperature ferromagnetism in Ca-doped AlP: First-principles study
DOI:10.1016/j.jmmm.2013.04.052 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:5 AU: Zhang, Yong;
10:77:24 Compression of a magnetic flux in the intergrain medium of a YBa2Cu3O7 granular superconductor from magnetic and magnetoresistive measurements
DOI:10.1063/1.3657775 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Balaev, D. A.;Popkov, S. I.;Sabitova, E. I.;Semenov, S. V.;Shaykhutdinov, K. A.;Shabanov, A. V.;Petrov, M. I.;
10:77:25 Proteresis of Cu2O/CuO core-shell nanoparticles: Experimental observations and theoretical considerations
DOI:10.1063/1.4902524 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Wu, Sheng Yun;Ji, Jhong-Yi;Shih, Po-Hsun;Gandhi, Ashish Chhaganlal;Chan, Ting-Shan;
10:78:1 Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications
DOI:10.1016/j.solmat.2009.08.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:49 AU: Fernandez, S.;Naranjo, F. B.;
10:78:2 The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate
DOI:10.1016/j.apsusc.2010.02.021 JN:APPLIED SURFACE SCIENCE PY:2010
TC:32 AU: Ding, J. J.;Chen, H. X.;Ma, S. Y.;
10:78:3 Highly conductive and transparent laser ablated nanostructured Al:ZnO thin films
DOI:10.1016/j.apsusc.2010.07.044 JN:APPLIED SURFACE SCIENCE PY:2010
TC:31 AU: Vinodkumar, R.;Navas, I.;Chalana, S. R.;Gopchandran, K. G.;Ganesan, V.;Philip, Reji;Sudheer, S. K.;Pillai, V. P. Mahadevan;
10:78:4 The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes
DOI:10.1016/j.tsf.2009.10.130 JN:THIN SOLID FILMS PY:2010
TC:35 AU: Cho, Hyung Jun;Lee, Sung Uk;Hong, Byungyou;Shin, Yong Deok;Ju, Jin Young;Kim, Hee Dong;Park, Mungi;Choi, Won Seok;
10:78:5 Room temperature preparation of high performance AZO films by MF sputtering
DOI:10.1016/j.ceramint.2012.07.037 JN:CERAMICS INTERNATIONAL PY:2013
TC:17 AU: Shi, Qian;Zhou, Kesong;Dai, Minjiang;Hou, Huijun;Lin, Songsheng;Wei, Chunbei;Hu, Fang;
10:78:6 Growth of high-quality Ga-F codoped ZnO thin films by mid-frequency sputtering
DOI:10.1016/j.ceramint.2013.05.125 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Shi, Qian;Zhou, Kesong;Dai, Mingjiang;Lin, Songsheng;Hou, Huijun;Wei, Chunbei;Hu, Fang;
10:78:7 Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators
DOI:10.1016/j.tsf.2009.08.036 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Jang, Kyungsoo;Park, Hyeongsik;Jung, Sungwook;Van Duy, Nguyen;Kim, Youngkuk;Cho, Jaehyun;Choi, Hyungwook;Kwon, Taeyoung;Lee, Wonbaek;Gong, Daeyeong;Park, Seungman;Yi, Junsin;Kim, Doyoung;Kim, Hyungjun;
10:78:8 High performance ZnO:Al films deposited on PET substrates using facing target sputtering
DOI:10.1016/j.apsusc.2013.05.155 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Guo, Tingting;Dong, Guobo;Gao, Fangyuan;Xiao, Yu;Chen, Qiang;Diao, Xungang;
10:78:9 Effects of pre-strain applied at a polyethylene terephthalate substrate before the coating of Al-doped ZnO film on film quality and optical and electrical properties
DOI:10.1016/j.ceramint.2011.03.042 JN:CERAMICS INTERNATIONAL PY:2011
TC:12 AU: Li, Tse-Chang;Hsieh, Po-Tsung;Lin, Jen-Fin;
10:78:10 Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2013.07.079 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Chen, Y. Y.;Yang, J. R.;Cheng, S. L.;Shiojiri, M.;
10:78:11 Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature
DOI:10.1016/j.apsusc.2014.08.051 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Chen, Jian;Sun, Yihua;Lv, Xin;Li, Derong;Fang, Liang;Wang, Hailin;Sun, Xiaohua;Huang, Caihua;Yu, Haizhou;Feng, Ping;
10:78:12 Effects of inclination angle applied to a polyethylene terephalate substrate before the coating of Al-doped ZnO on film quality and mechanical and optical properties
DOI:10.1016/j.ceramint.2013.12.026 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Li, Tse-Chang;Chung, Chung-Jen;Han, Chang-Fu;Lin, Jen-Fin;
10:78:13 Structural, electrical and optical properties of Ga-doped ZnO films on PET substrate
DOI:10.1016/j.apsusc.2010.08.014 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Kim, Byeong-Guk;Kim, Jeong-Yeon;Lee, Seok-Jin;Park, Jae-Hwan;Lim, Dong-Gun;Park, Mun-Gi;
10:78:14 Preparation of high transmittance ZnO:Al film by pulsed filtered cathodic arc technology and rapid thermal annealing
DOI:10.1016/j.apsusc.2011.03.013 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Gao, F.;Yu, K. M.;Mendelsberg, R. J.;Anders, A.;Walukiewicz, W.;
10:78:15 Structural-crossover-induced optical band gap variation of Hf-doped ZnO films
DOI:10.1016/j.apsusc.2014.09.194 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Bae, Jong-Seong;Jeong, Young-Eui;Park, Sungkyun;
10:78:16 Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread
DOI:10.1016/j.ceramint.2011.05.107 JN:CERAMICS INTERNATIONAL PY:2012
TC:12 AU: Jung, Keun;Choi, Won-Kook;Yoon, Seok-Jin;Kim, Hyun Jae;Choi, Ji-Won;
10:78:17 Effects of prestrain applied to poly(ethylene terephthalate) substrate on size, porosity, and geometry of TiO2 particles and optical properties of TiO2/PET specimens
DOI:10.1016/j.ceramint.2013.02.046 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Li, Tse-Chang;Chung, Chung-Jen;Han, Chang-Fu;Lin, Jen-Fin;
10:78:18 Influence of post-annealing temperature on the properties exhibited by nanostructured In doped ZnO thin films
DOI:10.1016/j.tsf.2010.03.087 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Abdullah, H.;Norazia, M. N.;Shaari, S.;Mandeep, J. S.;
10:78:19 Influences of roll-to-roll process and polymer substrate anisotropies on the tensile failure of thin oxide films
DOI:10.1016/j.tsf.2010.07.033 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Leterrier, Yves;Pinyol, Albert;Rougier, Luc;Waller, Judith H.;Manson, Jan-Anders;Dumont, Pierre J. J.;Andersons, Janis;Modniks, Janis;Campo, Manuel;Sauer, Peter;Schwenzel, Julian;
10:78:20 Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures
DOI:10.1016/j.apsusc.2012.10.158 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Kumar, B. Rajesh;Rao, T. Subba;
10:78:21 Effects of prestrain applied to poly (ethylene terephthalate) substrate before coating of indium-tin-oxide film on film quality and optical, electrical, and mechanical properties
DOI:10.1016/j.ceramint.2013.06.040 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Li, Tse-Chang;Chung, Chung-Jen;Han, Chang-Fu;Hsieh, Po-Tsung;Chen, Kuan-Jen;Lin, Jen-Fin;
10:78:22 Low temperature rf-sputtered In and Al co-doped ZnO thin films deposited on flexible PET substrate
DOI:10.1016/j.ceramint.2014.02.101 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Park, Sang-Uk;Koh, Jung-Hyuk;
10:78:23 Preparation and Properties of Aluminum-doped ZnO-SiO2 Composite Thin Films
DOI:10.1080/10584587.2013.780146 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Xu, Li;Qin, Xiaomei;Wu, Chuanlei;Chen, Enlong;Hu, Zhijuan;Du, Guoping;
10:78:24 Effects of pre-strain applied at a polyethylene terephthalate substrate before the coating of TiO2 film on the coating film quality and optical performance
DOI:10.1016/j.tsf.2011.02.051 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Li, Tse-Chang;Wu, Bo-Hsiung;Lin, Jen-Fin;
10:78:25 Mechanism of conductivity degradation of AZO thin film in high humidity ambient
DOI:10.1016/j.apsusc.2013.04.167 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Liu, Yen-Shuo;Hsieh, Chih-Yi;Wu, Yen-Ju;Wei, Yu-Shan;Lee, Po-Ming;Hsieh, Hsiu-Ming;Liu, Cheng-Yi;
10:78:26 Growth of Cu/Zn Alloy Films Sputtered on Flexible Acrylic Resin-Coated PET Substrates
DOI:10.1080/10584587.2011.575649 JN:INTEGRATED FERROELECTRICS PY:2011
TC:0 AU: Qu, Xiaoyue;Xie, Hui;Chen, Zhenxing;
10:78:27 Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors
DOI:10.1007/s11664-012-2166-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Han, Dong-Suk;Moon, Yeon-Keon;Lee, Sih;Kim, Kyung-Taek;Moon, Dae-Yong;Lee, Sang-Ho;Kim, Woong-Sun;Park, Jong-Wan;
10:78:28 Improve the Properties of p-i-n alpha-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films
DOI:10.1155/2013/495752 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Wang, Fang-Hsing;Fu, Ming-Yue;Su, Chean-Cheng;Yang, Cheng-Fu;Tzeng, Hua-Tz;Liu, Han-Wen;Kung, Chung-Yuan;
10:78:29 Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition
DOI:10.1016/j.matchemphys.2013.04.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:0 AU: Mohanty, Bhaskar Chandra;Yeon, Deuk Ho;Das, Sachindra Nath;Kwak, Ji Hye;Yoon, Kyung Hoon;Cho, Yong Soo;
10:78:30 Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
DOI:10.1016/j.tsf.2011.06.079 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Tohsophon, T.;Wattanasupinyo, N.;Silskulsuk, B.;Sirikulrat, N.;
10:79:1 Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers
DOI:10.1103/PhysRevLett.104.256803 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:29 AU: King, P. D. C.;Veal, T. D.;McConville, C. F.;Zuniga-Perez, J.;Munoz-Sanjose, V.;Hopkinson, M.;Rienks, E. D. L.;Jensen, M. Fuglsang;Hofmann, Ph.;
10:79:2 Fermi level stabilization energy in cadmium oxide
DOI:10.1063/1.3428444 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Speaks, D. T.;Mayer, M. A.;Yu, K. M.;Mao, S. S.;Haller, E. E.;Walukiewicz, W.;
10:79:3 Temperature dependence of the direct bandgap and transport properties of CdO
DOI:10.1063/1.4775691 JN:APPLIED PHYSICS LETTERS PY:2013
TC:12 AU: Farahani, S. K. Vasheghani;Munoz-Sanjose, V.;Zuniga-Perez, J.;McConville, C. F.;Veal, T. D.;
10:79:4 Ideal transparent conductors for full spectrum photovoltaics
DOI:10.1063/1.4729563 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:13 AU: Yu, Kin Man;Mayer, Marie A.;Speaks, Derrick T.;He, Hongcai;Zhao, Ruying;Hsu, L.;Mao, Samuel S.;Haller, E. E.;Walukiewicz, Wladek;
10:79:5 Crystal structure and properties of CdxZn1-xO alloys across the full composition range
DOI:10.1063/1.4809950 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Detert, D. M.;Lim, S. H. M.;Tom, K.;Luce, A. V.;Anders, A.;Dubon, O. D.;Yu, K. M.;Walukiewicz, W.;
10:79:6 Electron mobility in CdO films
DOI:10.1063/1.3562141 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Farahani, S. K. Vasheghani;Veal, T. D.;King, P. D. C.;Zuniga-Perez, J.;Munoz-Sanjose, V.;McConville, C. F.;
10:79:7 Structural, electrical and moisture resistance properties of Ga-doped ZnO films
DOI:10.1016/j.tsf.2011.10.037 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Sato, Yasushi;Makino, Hisao;Yamamoto, Naoki;Yamamoto, Tetsuya;
10:79:8 Current underestimation of the optical gap and Burstein-Moss shift in CdO thin films: A consequence of extended misuse of alpha(2)-versus-h nu plots
DOI:10.1063/1.3651338 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Segura, A.;Sanchez-Royo, J. F.;Garcia-Domene, B.;Almonacid, G.;
10:79:9 Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc discharge
DOI:10.1016/j.tsf.2012.07.140 JN:THIN SOLID FILMS PY:2013
TC:10 AU: Terasako, T.;Song, H.;Makino, H.;Shirakata, S.;Yamamoto, T.;
10:79:10 Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO
DOI:10.1103/PhysRevB.89.035203 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Mudd, J. J.;Lee, Tien-Lin;Munoz-Sanjose, V.;Zuniga-Perez, J.;Hesp, D.;Kahk, J. M.;Payne, D. J.;Egdell, R. G.;McConville, C. F.;
10:79:11 Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory study
DOI:10.1103/PhysRevB.89.165305 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Mudd, J. J.;Lee, Tien-Lin;Munoz-Sanjose, V.;Zuniga-Perez, J.;Payne, D. J.;Egdell, R. G.;McConville, C. F.;
10:79:12 Temperature-dependent optical properties of epitaxial CdO thin films determined by spectroscopic ellipsometry and Raman scattering
DOI:10.1063/1.4803876 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Choi, S. G.;Gedvilas, L. M.;Hwang, S. Y.;Kim, T. J.;Kim, Y. D.;Zuniga-Perez, J.;Munoz Sanjose, V.;
10:79:13 Material properties of Cd1-xMgxO alloys synthesized by radio frequency sputtering
DOI:10.1063/1.4816326 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Chen, Guibin;Yu, K. M.;Reichertz, L. A.;Walukiewicz, W.;
10:79:14 Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition
DOI:10.1007/s10853-013-7179-y JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Zhu, Yuankun;Mendelsberg, Rueben J.;Zhu, Jiaqi;Han, Jiecai;Anders, Andre;
10:79:15 Full multiple scattering analysis of XANES at the Cd L-3 and O K edges in CdO films combined with a soft-x-ray emission investigation
DOI:10.1103/PhysRevB.82.075107 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Demchenko, I. N.;Denlinger, J. D.;Chernyshova, M.;Yu, K. M.;Speaks, D. T.;Olalde-Velasco, P.;Hemmers, O.;Walukiewicz, W.;Derkachova, A.;Lawniczak-Jablonska, K.;
10:79:16 Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.3357377 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Cusco, R.;Ibanez, J.;Domenech-Amador, N.;Artus, L.;Zuniga-Perez, J.;Munoz-Sanjose, V.;
10:79:17 Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV
DOI:10.1116/1.3498755 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:10 AU: Choi, S. G.;Zuniga-Perez, J.;Munoz-Sanjose, V.;Norman, A. G.;Perkins, C. L.;Levi, D. H.;
10:79:18 Carrier transport in undoped CdO films grown by atmospheric-pressure chemical vapor deposition
DOI:10.1016/j.tsf.2014.07.061 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Terasako, Tomoaki;Ohmae, Ken;Yamane, Motohiro;Shirakata, Sho;
10:79:19 High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.4790383 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Oliva, R.;Ibanez, J.;Artus, L.;Cusco, R.;Zuniga-Perez, J.;Munoz-Sanjose, V.;
10:79:20 Carrier transport and photoluminescence properties of Ga-doped ZnO films grown by ion-plating and by atmospheric-pressure CVD
DOI:10.1016/j.tsf.2013.06.039 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Terasako, T.;Ogura, Y.;Fujimoto, S.;Song, H.;Makino, H.;Yagi, M.;Shirakata, S.;Yamamoto, T.;
10:79:21 Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces
DOI:10.1063/1.4896912 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nishitani, Junichi;Yu, Kin Man;Walukiewicz, Wladek;
10:79:22 Strongly enhanced electron-phonon coupling in the Rashba-split state of the Bi/Ag(111) surface alloy
DOI:10.1103/PhysRevB.83.155451 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Guan, Dandan;Bianchi, Marco;Bao, Shining;Perkins, Edward;Meier, Fabian;Dil, J. Hugo;Osterwalder, Juerg;Hofmann, Philip;
10:79:23 Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells
DOI:10.1016/j.tsf.2011.01.143 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Gessert, T. A.;Burst, J.;Li, X.;Scott, M.;Coutts, T. J.;
10:79:24 Large polaron formation induced by Rashba spin-orbit coupling
DOI:10.1103/PhysRevB.81.075306 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Grimaldi, C.;
10:79:25 Hydrogen impurities and native defects in CdO
DOI:10.1063/1.3641971 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Amini, M. N.;Saniz, R.;Lamoen, D.;Partoens, B.;
10:80:1 Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays
DOI:10.1021/nl101907h JN:NANO LETTERS PY:2010
TC:109 AU: Chen, Min-Teng;Lu, Ming-Pei;Wu, Yi-Jen;Song, Jinhui;Lee, Chung-Yang;Lu, Ming-Yen;Chang, Yu-Cheng;Chou, Li-Jen;Wang, Zhong Lin;Chen, Lih-Juann;
10:80:2 Metal oxide nanowire chemical and biochemical sensors
DOI:10.1557/jmr.2013.304 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Comini, Elisabetta;Baratto, Camilla;Faglia, Guido;Ferroni, Matteo;Ponzoni, Andrea;Zappa, Dario;Sberveglieri, Giorgio;
10:80:3 p-Type ZnO nanowires: From synthesis to nanoenergy
DOI:10.1016/j.nanoen.2011.12.004 JN:NANO ENERGY PY:2012
TC:15 AU: Lu, Ming-Pei;Lu, Ming-Yen;Chen, Lih-Juann;
10:80:4 Photovoltaic device on a single ZnO nanowire p-n homojunction
DOI:10.1088/0957-4484/23/11/115401 JN:NANOTECHNOLOGY PY:2012
TC:17 AU: Cho, Hak Dong;Zakirov, Anvar S.;Yuldashev, Shavkat U.;Ahn, Chi Won;Yeo, Yung Kee;Kang, Tae Won;
10:80:5 Size Dependence of Dielectric Constant in a Single Pencil-Like ZnO Nanowire
DOI:10.1021/nl204353t JN:NANO LETTERS PY:2012
TC:40 AU: Yang, Ya;Guo, Wen;Wang, Xueqiang;Wang, Zengze;Qi, Junjie;Zhang, Yue;
10:80:6 Coaxial p-Si/n-ZnO nanowire heterostructures for energy and sensing applications
DOI:10.1016/j.matchemphys.2012.05.034 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Gad, A. E.;Hoffmann, M. W. G.;Hernandez-Ramirez, F.;Prades, J. D.;Shen, H.;Mathur, S.;
10:80:7 Compensation mechanism in N-doped ZnO nanowires
DOI:10.1088/0957-4484/21/24/245703 JN:NANOTECHNOLOGY PY:2010
TC:24 AU: Gao, Jingyun;Zhang, Xinzheng;Sun, Yanghui;Zhao, Qing;Yu, Dapeng;
10:80:8 Multibit Programmable Optoelectronic Nanowire Memory with Sub-femtojoule Optical Writing Energy
DOI:10.1002/adfm.201303864 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:4 AU: Lu, Ming-Pei;Lu, Ming-Yen;Chen, Lih-Juann;
10:80:9 Vertical ZnO nanowire growth on metal substrates
DOI:10.1088/0957-4484/23/19/194015 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Tam Ngo-Duc;Singh, Karandeep;Meyyappan, M.;Oye, Michael M.;
10:80:10 Influences of different interdigital spacing on the performance of UV photodetectors based on ZnO nanofibers
DOI:10.1016/j.apsusc.2014.03.091 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Gu, Xuechi;Zhang, Min;Meng, Fanxu;Zhang, Xindong;Chen, Yu;Ruan, Shengping;
10:80:11 Low-frequency electrical fluctuations in metal-nanowire-metal phototransistors
DOI:10.1088/0957-4484/25/28/285202 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Lu, Ming-Pei;Lu, Ming-Yen;Wang, Ying-Jhe;
10:80:12 Two-step epitaxial synthesis and layered growth mechanism of bisectional ZnO nanowire arrays
DOI:10.1016/j.jcrysgro.2012.10.058 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Wang, Wenduo;Zhang, Zheng;Liao, Qingliang;Yu, Tong;Shen, Yanwei;Li, Peifeng;Huang, Yunhua;Zhang, Yue;
10:80:13 Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods
DOI:10.1007/s00339-013-7638-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Shimogaki, Tetsuya;Ofuji, Taihei;Tetsuyama, Norihiro;Okazaki, Kota;Higashihata, Mitsuhiro;Nakamura, Daisuke;Ikenoue, Hiroshi;Asano, Tanemasa;Okada, Tatsuo;
10:80:14 Control of Semiconducting and Metallic Indium Oxide Nanowires
DOI:10.1021/nn200390d JN:ACS NANO PY:2011
TC:16 AU: Lim, Taekyung;Lee, Sumi;Meyyappan, M.;Ju, Sanghyun;
10:80:15 Optical modulation in microsized optical resonators with irregular hexagonal cross-section
DOI:10.1039/c4tc01223b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Dong, Hongxing;Liu, Yang;Sun, Shulin;Chen, Zhanghai;Zhang, Long;
10:80:16 Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes
DOI:10.1016/j.tsf.2014.02.114 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Shen, Guan-Hung;Hong, Franklin Chau-Nan;
10:81:1 Electrical measurements of dielectric properties of molybdenum-doped zinc oxide thin films
DOI:10.1016/j.mssp.2014.01.042 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Larbi, T.;Ouni, B.;Boukachem, A.;Boubaker, K.;Amlouk, M.;
10:81:2 Investigation of structural, optical, electrical and dielectric properties of catalytic sprayed hausmannite thin film
DOI:10.1016/j.materresbull.2014.09.007 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:4 AU: Larbi, T.;Ouni, B.;Boukhachem, A.;Boubaker, K.;Amlouk, M.;
10:81:3 XRD and XPS characterization of mixed valence Mn3O4 hausmannite thin films prepared by chemical spray pyrolysis technique
DOI:10.1016/j.apsusc.2009.11.051 JN:APPLIED SURFACE SCIENCE PY:2010
TC:57 AU: Raj, A. Moses Ezhil;Victoria, S. Grace;Jothy, V. Bena;Ravidhas, C.;Wollschlaeger, Joachim;Suendorf, M.;Neumann, M.;Jayachandran, M.;Sanjeeviraja, C.;
10:81:4 Investigation of electrical and dielectric properties of antimony oxide (Sb2O4) semiconductor thin films for TCO and optoelectronic applications
DOI:10.1016/j.jnoncrysol.2013.02.006 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:17 AU: Ouni, B.;Lakhdar, M. Hai;Boughalmi, R.;Larbi, T.;Boukhachem, A.;Madani, A.;Boubaker, K.;Amlouk, M.;
10:81:5 Structural, opto-thermal and electrical properties of ZnO:Mo sprayed thin films
DOI:10.1016/j.mssp.2012.02.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:32 AU: Boukhachem, A.;Ouni, B.;Karyaoui, M.;Madani, A.;Chtourou, R.;Amlouk, M.;
10:81:6 Some transparent semi-conductor metal oxides: Comparative investigations in terms of Wemple-DiDomenico parameters, mechanical performance and Amlouk-Boubaker opto-thermal expansivity
DOI:10.1016/j.mssp.2010.12.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:15 AU: Ouni, B.;Boukhachem, A.;Dabbous, S.;Amlouk, A.;Boubaker, K.;Amlouk, M.;
10:81:7 SnO2 thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity psi(AB)
DOI:10.1016/j.jallcom.2009.10.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:21 AU: Amlouk, A.;Boubaker, K.;Amlouk, M.;
10:81:8 Physical investigations on MoO3 sprayed thin film for selective sensitivity applications
DOI:10.1016/j.ceramint.2014.05.062 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Boukhachem, A.;Bouzidi, C.;Boughalmi, R.;Ouerteni, R.;Kahlaoui, M.;Ouni, B.;Elhouichet, H.;Amlouk, M.;
10:81:9 Dielectric relaxation, modulus behavior and conduction mechanism in Sb2S3 thin films
DOI:10.1016/j.mssp.2013.11.038 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:8 AU: Lakhdar, M. Haj;Ouni, B.;Amlouk, M.;
10:81:10 Optical and structural investigations on Sb2S2O new kermesite alloy for optoelectronic applications
DOI:10.1016/j.jallcom.2013.06.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Lakhdar, M. Haj;Larbi, T.;Ouni, B.;Amlouk, M.;
10:81:11 Structural, mechanical and opto-thermal properties of non-crystalline SbxOy thin films
DOI:10.1016/j.jnoncrysol.2010.04.015 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:16 AU: Ouni, B.;Ouerfelli, J.;Amlouk, A.;Boubaker, K.;Amlouk, M.;
10:81:12 Physical investigations on Sb2S3 sprayed thin film for optoelectronic applications
DOI:10.1016/j.mssp.2014.05.059 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Boughalmi, R.;Boukhachem, A.;Kahlaoui, M.;Maghraoui, H.;Amlouk, M.;
10:81:13 Characterization of nanostructured Mn3O4 thin films grown by SILAR method at room temperature
DOI:10.1016/j.matchemphys.2012.08.052 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:6 AU: Ubale, A. U.;Belkhedkar, M. R.;Sakhare, Y. S.;Singh, Arvind;Gurada, Chetan;Kothari, D. C.;
10:81:14 Effect of tin content on the electrical and optical properties of sprayed silver sulfide semiconductor thin films
DOI:10.1016/j.mssp.2013.05.019 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:10 AU: Boughalmi, R.;Boukhachem, A.;Gaied, I.;Boubaker, K.;Bouhafs, M.;Amlouk, M.;
10:81:15 Vanadium doping patterns in ZnO lattices in the lattice compatibility theory framework
DOI:10.1016/j.mssp.2013.04.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Gherouel, D.;Dabbous, S.;Boubaker, K.;Amlouk, M.;
10:81:16 Synthesis and spectroscopic investigations of Mn3O4 nanoparticles
DOI:10.1016/j.matlet.2010.07.036 JN:MATERIALS LETTERS PY:2010
TC:18 AU: Dhaouadi, Hassouna;Madani, Adel;Touati, Fathi;
10:81:17 Characterization of nanostructured photosensitive (NiS)(x)(CdS)((1-x)) composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route
DOI:10.1016/j.materresbull.2011.03.016 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:10 AU: Ubale, A. U.;Bargal, A. N.;
10:81:18 An investigation on silar Cu(In1-xAlx)Se-2 thin films
DOI:10.1016/j.mseb.2010.03.028 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:13 AU: Dhanam, M.;Kavitha, B.;Velumani, S.;
10:81:19 Optimization of ZnO sheets dimension in terms of ductility, micro-indentation, mechanical resistance, Amlouk-Boubaker optothermal expansivity and crystallites size
DOI:10.1016/j.msea.2010.10.049 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2011
TC:0 AU: Boubaker, K.;
10:81:20 A novel mild route to hausmannite Mn3O4 nanocubes at room temperature and its catalytic performance
DOI:10.1016/j.matlet.2011.05.061 JN:MATERIALS LETTERS PY:2011
TC:13 AU: Zhang, Junhao;Du, Jin;Wang, Hongliang;Wang, Jiaolong;Qu, Zhaokun;Jia, Liang;
10:81:21 Effect of air annealing on the band gap and optical properties of SnSb2S4 thin films for solar cell application
DOI:10.1016/j.matlet.2013.02.097 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Ali, Nisar;Hussain, S. T.;Khan, Yaqoob;Ahmad, Nisar;Iqbal, M. A.;Abbas, Syed Mustansar;
10:81:22 Fabrication of GaN nanowires on porous GaN substrate by thermal evaporation
DOI:10.1016/j.mssp.2012.06.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Shekari, L.;Abu Hassan, H.;Thahab, S. M.;Hassan, Z.;
10:81:23 Transport properties of copper indium aluminum selenide thin films deposited by successive Ionic layer adsorption and reaction
DOI:10.1016/j.mssp.2012.05.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Kavitha, B.;Dhanam, M.;
10:81:24 Effect of air annealing on dispersive optical constants and electrical properties of SnSb2S4 thin films
DOI:10.1016/j.mssp.2014.05.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Fadhli, Y.;Rabhi, A.;Kanzari, M.;
10:81:25 Majority charge carrier reversal and its effect on thermal and electron transport in xV(2)O(5)-(1-x) As2O3 glasses
DOI:10.1016/j.jnoncrysol.2012.01.042 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:1 AU: Annamalai, Sezhian;Bhatta, Rudra P.;Pegg, Ian L.;Dutta, Biprodas;
10:81:26 Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique
DOI:10.1016/j.matchar.2012.11.002 JN:MATERIALS CHARACTERIZATION PY:2013
TC:7 AU: Martinez, H. M.;Torres, J.;Lopez Carreno, L. D.;Rodriguez-Garcia, M. E.;
10:81:27 On the notion of the Amlouk-Boubaker optothermal expansivity psi(AB)
DOI:10.1016/j.mssp.2012.06.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:0 AU: Chen, Yin-Jie;
10:82:1 A structure zone diagram including plasma-based deposition and ion etching
DOI:10.1016/j.tsf.2009.10.145 JN:THIN SOLID FILMS PY:2010
TC:103 AU: Anders, Andre;
10:82:2 High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition
DOI:10.1016/j.tsf.2009.10.006 JN:THIN SOLID FILMS PY:2010
TC:37 AU: Anders, Andre;Lim, Sunnie H. N.;Yu, Kin Man;Andersson, Joakim;Rosen, Johanna;McFarland, Mike;Brown, Jeff;
10:82:3 Reactive magnetron sputtering of transparent conductive oxide thin films: Role of energetic particle (ion) bombardment
DOI:10.1557/jmr.2011.428 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:33 AU: Ellmer, Klaus;Welzel, Thomas;
10:82:4 Evidence for the Formation of Nitrogen-Rich Platinum and Palladium Nitride Nanoparticles
DOI:10.1021/cm403224m JN:CHEMISTRY OF MATERIALS PY:2013
TC:3 AU: Veith, Gabriel M.;Lupini, Andrew R.;Baggetto, Loic;Browning, James F.;Keum, Jong K.;Villa, Alberto;Prati, Laura;Papandrew, Alexander B.;Goenaga, Gabriel A.;Mullins, David R.;Bullock, Steven E.;Dudney, Nancy J.;
10:82:5 Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides
DOI:10.1116/1.4762815 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:9 AU: Welzel, Thomas;Ellmer, Klaus;
10:82:6 The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films
DOI:10.1063/1.4811647 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Bikowski, Andre;Welzel, Thomas;Ellmer, Klaus;
10:82:7 Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. I. Negative ions
DOI:10.1063/1.3553846 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Welzel, Th.;Naumov, S.;Ellmer, K.;
10:82:8 Determination of miscibility in MgO-ZnO nanocrystal alloys by x-ray absorption spectroscopy
DOI:10.1063/1.3671987 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Limpijumnong, Sukit;Jutimoosik, Jaru;Palakawong, Nirawith;Klysubun, Wantana;Nukeaw, Jiti;Du, Mao-Hua;Rujirawat, Saroj;
10:82:9 Ultraviolet detection from graphitic-C/Zn1-xMgxO Schottky devices fabricated at moderate temperatures
DOI:10.1063/1.4826576 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Mayes, E. L. H.;McCulloch, D. G.;Partridge, J. G.;
10:82:10 Ultraviolet detection from energetically deposited titania films
DOI:10.1063/1.4870069 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Field, M. R.;Murdoch, B. J.;McCulloch, D. G.;Partridge, J. G.;
10:82:11 Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering
DOI:10.1016/j.apsusc.2009.09.096 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Cai, Yongan;Liu, Wei;He, Qing;Zhang, Yi;Yu, Tao;Sun, Yun;
10:82:12 Structural characterisation of energetically deposited Zn1-xMgxO films
DOI:10.1016/j.jcrysgro.2014.11.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Mayes, E. L. H.;McCulloch, D. G.;Partridge, J. G.;
10:82:13 The correlation between the radial distribution of high-energetic ions and the structural as well as electrical properties of magnetron sputtered ZnO:Al films
DOI:10.1063/1.4840975 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Bikowski, Andre;Welzel, Thomas;Ellmer, Klaus;
10:82:14 Stable n-channel metal-semiconductor field effect transistors on ZnO films deposited using a filtered cathodic vacuum arc
DOI:10.1063/1.4769899 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Elzwawi, S.;Kim, H-S.;Lynam, M.;Mayes, E. L. H.;McCulloch, D. G.;Allen, M. W.;Partridge, J. G.;
10:82:15 Development of a compact combined plasma sensor for plasma surface engineering processes
DOI:10.1063/1.4807892 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Welzel, T.;Kellermeier, M.;Harbauer, K.;Ellmer, K.;
10:82:16 Energy transferred to the substrate surface during reactive magnetron sputtering of aluminum in Ar/O-2 atmosphere
DOI:10.1016/j.tsf.2013.05.075 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Thomann, A. L.;Cormier, P. A.;Dolique, V.;Semmar, N.;Dussart, R.;Lecas, T.;Courtois, B.;Brault, P.;
10:82:17 Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. II. Positive ions
DOI:10.1063/1.3553847 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Welzel, Th.;Naumov, S.;Ellmer, K.;
10:82:18 Controlling ion fluxes during reactive sputter-deposition of SnO2:F
DOI:10.1063/1.4887119 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Jaeger, Timo;Romanyuk, Yaroslav E.;Tiwari, Ayodhya N.;Anders, Andre;
10:82:19 Pulsed electron beam deposition of transparent conducting Al-doped ZnO films
DOI:10.1016/j.tsf.2012.07.027 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Pham Hong Quang;Ngo Dinh Sang;Do Quang Ngoc;
10:82:20 IR emission from the target during plasma magnetron sputter deposition
DOI:10.1016/j.tsf.2013.07.025 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Cormier, P. -A.;Thomann, A. -L.;Dolique, V.;Balhamri, A.;Dussart, R.;Semmar, N.;Lecas, T.;Brault, P.;Snyders, R.;Konstantinidis, S.;
10:82:21 Probing dusty-plasma/surface interactions with a heat flux microsensor
DOI:10.1063/1.3674290 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Abolmasov, S. N.;Cormier, P. A.;Rios, A. Torres;Dussart, R.;Semmar, N.;Thomann, A. L.;Roca i Cabarrocas, P.;
10:82:22 Formation of porous low-dimensional nickel systems during near equilibrium condensation in ultrapure inert environment
DOI:10.1016/j.apsusc.2014.07.187 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Perekrestov, Vyacheslav;Kornyushchenko, Anna;Kosminska, Yuliya;Wilde, Gerhard;Ostendorp, Stefan;Winkler, Nina;
10:82:23 Measuring the energy flux at the substrate position during magnetron sputter deposition processes
DOI:10.1063/1.4773103 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Cormier, P-A;Balhamri, A.;Thomann, A-L;Dussart, R.;Semmar, N.;Mathias, J.;Snyders, R.;Konstantinidis, S.;
10:82:24 Preparation of Highly Textured ZnO Thin Films by Pulsed Electron Deposition
DOI:10.2320/matertrans.M2011141 JN:MATERIALS TRANSACTIONS PY:2011
TC:3 AU: Zhan, Peng;Li, Zhengcao;Zhang, Zhengjun;
10:82:25 Thin films of SnO2:F by reactive magnetron sputtering with rapid thermal post-annealing
DOI:10.1016/j.tsf.2013.12.038 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Jaeger, T.;Bissig, B.;Doebeli, M.;Tiwari, A. N.;Romanyuk, Y. E.;
10:82:26 Self-assembly of condensates with advanced surface by means of the competing field selectivity and Gibbs-Thomson effect
DOI:10.1016/j.apsusc.2014.01.153 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Perekrestov, Vyacheslav;Kosminska, Yuliya;Mokrenko, Alexander;Davydenko, Taras;
10:82:27 Effects of Mg Local Structure on Mg K-edge XANES Spectra of MgxZn1-xO Alloy: A First-principles Study
DOI:10.1080/10584587.2014.906285 JN:INTEGRATED FERROELECTRICS PY:2014
TC:0 AU: Palakawong, Nirawith;Jutimoosik, Jaru;T-Thienprasert, Jiraroj;Rujirawat, Saroj;Limpijumnong, Sukit;
10:82:28 The relationship between microstructure and electrical breakdown in cathodic arc deposited hafnium oxide films
DOI:10.1063/1.3607238 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Field, M. R.;Partridge, J. G.;Mayes, E. H.;Latham, K.;McCulloch, D. G.;
10:82:29 Residual stress in as-deposited Al-Cu-Fe-B quasicrystalline thin films
DOI:10.1557/jmr.2011.415 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:3 AU: Polishchuk, Sergey;Boulet, Pascal;Mezin, Andre;de Weerd, Marie-Cecile;Weber, Sylvain;Ledieu, Julian;Dubois, Jean-Marie;Fournee, Vincent;
10:82:30 Finite element simulation and experimental research on ZnO:Al by magnetron sputtering
DOI:10.1016/j.tsf.2011.04.168 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Song Ruiliang;Liu Wei;Zhang Yi;Cai Yongan;Sun Yun;
10:82:31 A combined sensor for the diagnostics of plasma and film properties in magnetron sputtering processes
DOI:10.1016/j.tsf.2012.06.053 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Harbauer, Karsten;Welzel, Thomas;Ellmer, Klaus;
10:82:32 Effect of zinc nitrate concentration on structural and optical properties of ZnO thin films deposited by Spray Plasma device
DOI:10.1016/j.tsf.2014.02.067 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Baba, K.;Lazzaroni, C.;Brinza, O.;Nikravech, M.;
10:83:1 Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium
DOI:10.1016/j.apsusc.2009.10.032 JN:APPLIED SURFACE SCIENCE PY:2010
TC:159 AU: Lupan, O.;Pauporte, T.;Chow, L.;Viana, B.;Pelle, F.;Ono, L. K.;Cuenya, B. Roldan;Heinrich, H.;
10:83:2 Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV Sensors
DOI:10.1002/adma.201304363 JN:ADVANCED MATERIALS PY:2014
TC:68 AU: Gedamu, Dawit;Paulowicz, Ingo;Kaps, Soeren;Lupan, Oleg;Wille, Sebastian;Haidarschin, Galina;Mishra, Yogendra Kumar;Adelung, Rainer;
10:83:3 Synthesis and characterization of ZnO nanowires for nanosensor applications
DOI:10.1016/j.materresbull.2010.03.027 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:71 AU: Lupan, O.;Emelchenko, G. A.;Ursaki, V. V.;Chai, G.;Redkin, A. N.;Gruzintsev, A. N.;Tiginyanu, I. M.;Chow, L.;Ono, L. K.;Cuenya, B. Roldan;Heinrich, H.;Yakimov, E. E.;
10:83:4 Hydrothermal treatment for the marked structural and optical quality improvement of ZnO nanowire arrays deposited on lightweight flexible substrates
DOI:10.1016/j.jcrysgro.2010.05.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:40 AU: Lupan, Oleg;Pauporte, Thierry;
10:83:5 Single Step Integration of ZnO Nano- and Microneedles in Si Trenches by Novel Flame Transport Approach: Whispering Gallery Modes and Photocatalytic Properties
DOI:10.1021/am5010877 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:34 AU: Reimer, Tim;Paulowicz, Ingo;Roeder, Robert;Kaps, Soeren;Lupan, Oleg;Chemnitz, Steffen;Benecke, Wolfgang;Ronning, Carsten;Adelung, Rainer;Mishra, Yogendra K.;
10:83:6 Eu-doped ZnO nanowire arrays grown by electrodeposition
DOI:10.1016/j.apsusc.2013.06.053 JN:APPLIED SURFACE SCIENCE PY:2013
TC:16 AU: Lupan, O.;Pauporte, T.;Viana, B.;Aschehoug, P.;Ahmadi, M.;Cuenya, B. Roldan;Rudzevich, Y.;Lin, Y.;Chow, L.;
10:83:7 Comparative study of hydrothermal treatment and thermal annealing effects on the properties of electrodeposited micro-columnar ZnO thin films
DOI:10.1016/j.tsf.2011.05.072 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Lupan, O.;Pauporte, T.;Tiginyanu, I. M.;Ursaki, V. V.;Sontea, V.;Ono, L. K.;Cuenya, B. Roldan;Chow, L.;
10:83:8 Growth, structure, and cathodeluminescence of Eu-doped ZnO nanowires prepared by high-temperature and high-pressure pulsed-laser deposition
DOI:10.1063/1.3319671 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Yang, Y. H.;Feng, Y.;Zhu, H. G.;Yang, G. W.;
10:83:9 Europium doping induced symmetry deviation and its impact on the second harmonic generation of doped ZnO nanowires
DOI:10.1088/0957-4484/25/22/225202 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Dhara, Soumen;Imakita, Kenji;Mizuhata, Minoru;Fujii, Minoru;
10:83:10 Intense Intrashell Luminescence of Eu-Doped Single ZnO Nanowires at Room Temperature by Implantation Created Eu-O-i Complexes
DOI:10.1021/nl5015553 JN:NANO LETTERS PY:2014
TC:3 AU: Geburt, Sebastian;Lorke, Michael;da Rosa, Andreia L.;Frauenheim, Thomas;Roeder, Robert;Voss, Tobias;Kaiser, Uwe;Heimbrodt, Wolfram;Ronning, Carsten;
10:83:11 Microfluidic hydrothermal growth of ZnO nanowires over high aspect ratio microstructures
DOI:10.1088/0957-4484/24/37/375301 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Ladanov, M.;Algarin-Amaris, P.;Matthews, G.;Ram, M.;Thomas, S.;Kumar, A.;Wang, J.;
10:83:12 Reply to Comment on 'Europium doping induced symmetry deviation and its impact on the second harmonic generation of doped ZnO nanowires'
DOI:10.1088/0957-4484/25/45/458002 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Soumen, Dhara;Kenji, Imakita;Minoru, Mizuhata;Minoru, Fujii;
10:84:1 Influence of Fe-doping on the structural and optical properties of ZnO thin films prepared by sol-gel method
DOI:10.1016/j.jcrysgro.2009.12.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:51 AU: Xu, Linhua;Li, Xiangyin;
10:84:2 Effects of substrate temperature on the growth orientation and optical properties of ZnO:Fe films synthesized via magnetron sputtering
DOI:10.1016/j.jallcom.2013.04.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Zhang, Xiaolei;Ma, Shuyi;Li, Faming;Yang, Fuchao;Liu, Jing;Zhao, Qiang;
10:84:3 Optical properties of Ti-doped ZnO films synthesized via magnetron sputtering
DOI:10.1016/j.jallcom.2012.04.064 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Chen, Haixia;Ding, Jijun;Shi, Feng;Li, Yingfeng;Guo, Wenge;
10:84:4 Microstructure, magnetic and optical properties of sputtered polycrystalline ZnO films with Fe addition
DOI:10.1016/j.apsusc.2009.10.040 JN:APPLIED SURFACE SCIENCE PY:2010
TC:26 AU: Wang, X. C.;Mi, W. B.;Kuang, D. F.;
10:84:5 Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films
DOI:10.1016/j.jallcom.2011.11.113 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:23 AU: Mosbah, A.;Aida, M. S.;
10:84:6 Spray-Deposited Nanocrystalline WO3 Thin Films Prepared Using Tungsten Hexachloride Dissolved in N-N Dimethylformamide and Influence of In Doping on Their Structural, Optical and Electrical Properties
DOI:10.1007/s13391-013-3221-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:5 AU: Mukherjee, Ramnayan;Kushwaha, Ajay;Sahay, P. P.;
10:84:7 Influence of Fe-doping on the structural, optical and magnetic properties of ZnO nanoparticles
DOI:10.1016/j.jmmm.2012.05.054 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:18 AU: Liu, Changzhen;Meng, Dawei;Pang, Haixia;Wu, Xiuling;Xie, Jing;Yu, Xiaohong;Chen, Long;Liu, Xiaoyang;
10:84:8 Structural, optical, and magnetic properties of Fe-doped ZnO films prepared by spray pyrolysis method
DOI:10.1016/j.tsf.2009.12.039 JN:THIN SOLID FILMS PY:2010
TC:26 AU: Soumahoro, I.;Moubah, R.;Schmerber, G.;Colis, S.;Aouaj, M. Ait;Abd-Iefdil, M.;Hassanain, N.;Berrada, A.;Dinia, A.;
10:84:9 Effect of Cu on the microstructure and electrical properties of Cu/ZnO thin films
DOI:10.1016/j.jallcom.2012.10.032 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Shafi, K. Muhammed;Vinodkumar, R.;Bose, R. Jolly;Uvais, V. N.;Pillai, V. P. Mahadevan;
10:84:10 Surface and photocatalytic properties of ZnO thin film prepared by sol-gel method
DOI:10.1016/j.tsf.2012.04.050 JN:THIN SOLID FILMS PY:2012
TC:17 AU: Jongnavakit, Patcharee;Amornpitoksuk, Pongsaton;Suwanboon, Sumetha;Ratana, Tanakorn;
10:84:11 Microstructure and optical properties of Fe-doped ZnO thin films prepared by DC magnetron sputtering
DOI:10.1016/j.jcrysgro.2013.02.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:8 AU: Gao, Fei;Liu, Xiao Yan;Zheng, Li Yun;Li, Mei Xia;Bai, Yong Mei;Xie, Juan;
10:84:12 Effect of substrate on structural and transport properties of sprayed Fe:ZnO polycrystalline thin films
DOI:10.1007/s10853-014-8452-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Boshta, M.;Chikoidze, E.;Sayed, M. H.;Vilar, C.;Berini, B.;Dumont, Y.;
10:84:13 Enhancement of room temperature ferromagnetism of Fe-doped ZnO epitaxial thin films with Al co-doping
DOI:10.1016/j.jmmm.2010.11.090 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:12 AU: Chattopadhyay, S.;Nath, T. K.;Behan, A. J.;Neal, J. R.;Score, D.;Feng, Q.;Fox, A. M.;Gehring, G. A.;
10:84:14 Structure and ferromagnetism of Fe-doped and Fe-and Co-codoped ZnO nanoparticles synthesized by homogeneous precipitation method
DOI:10.1016/j.matlet.2012.07.040 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Yu, Xiaohong;Meng, Dawei;Liu, Changzhen;He, Xiaowen;Wang, Yongqian;Xie, Jing;
10:84:15 Influence of Fe doping on the structural, optical and acetone sensing properties of sprayed ZnO thin films
DOI:10.1016/j.materresbull.2013.03.026 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Prajapati, C. S.;Kushwaha, Ajay;Sahay, P. P.;
10:84:16 Structural and magnetic properties of transition metal doped ZnO films
DOI:10.1016/j.tsf.2009.09.047 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Jin, C. G.;Gao, Y.;Wu, X. M.;Cui, M. L.;Zhuge, L. J.;Chen, Z. C.;Hong, B.;
10:84:17 Optoelectronics and formaldehyde sensing properties of tin-doped ZnO thin films
DOI:10.1007/s00339-013-7589-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Prajapati, C. S.;Kushwaha, Ajay;Sahay, P. P.;
10:84:18 Dopant concentration dependence of structure, optical, and magnetic properties of ZnO:Fe thin films
DOI:10.1016/j.jcrysgro.2010.11.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Hong, Ruijin;Wen, Herui;Liu, Caiming;Chen, Jinglin;Liao, Jinsheng;
10:84:19 Room temperature ferromagnetism and diamagnetism of Co-doped ZnO microspheres synthesized by sol-gel method
DOI:10.1016/j.matlet.2014.02.062 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Yu, Xiaohong;Liu, Changzhen;Meng, Dawei;Lu, Can;Liu, Jie;Li, Huixia;Wang, Yongqian;Wang, Junxia;
10:84:20 Low-Temperature Synthesis of Fe-Doped ZnO Nanotubes
DOI:10.1007/s11664-012-2127-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Sapkota, Gopal;Gryczynski, Karol;Mcdougald, Roy;Neogi, Arup;Philipose, U.;
10:84:21 Effect of precursors on structure, optical and electrical properties of chemically deposited nanocrystalline ZnO thin films
DOI:10.1016/j.apsusc.2011.10.141 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Prajapati, C. S.;Sahay, P. P.;
10:84:22 Optical and structural properties of thin films of ZnO at elevated temperature
DOI:10.1016/j.jallcom.2014.04.039 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Kayani, Zohra N.;Afzal, Tosif;Riaz, Saira;Naseem, Shahzad;
10:84:23 Facile synthesis of superparamagnetic Fe-doped ZnO nanoparticles in liquid polyols
DOI:10.1016/j.matlet.2010.07.062 JN:MATERIALS LETTERS PY:2010
TC:14 AU: Wang, Jianwei;Wan, Jiaqi;Chen, Kezheng;
10:84:24 Room temperature magnetic properties of Fe and C implanted ZnO films
DOI:10.1016/j.apsusc.2011.06.053 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Xue, Y. H.;Zhang, X. D.;Zhang, X. L.;Shen, Y. Y.;Zhu, F.;Zhang, L. H.;Wang, J.;Liu, C. L.;
10:84:25 Pure and Sn-, Ga- and Mn-doped ZnO gas sensors working at different temperatures for formaldehyde, humidity, NH3, toluene and CO
DOI:10.1007/s00339-011-6468-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:10 AU: Han, Ning;Liu, Haidi;Wu, Xiaofeng;Li, Dongyan;Chai, Linyu;Chen, Yunfa;
10:84:26 Fabrication and evolution of Cu nanoparticles in Al2O3 crystal by ion implantation and annealing at different atmospheres
DOI:10.1016/j.apsusc.2010.01.023 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Shen, Yanyan;Zhang, Lili;Li, Zhaodong;Zhang, Xiaodong;Zhang, Dacheng;Li, Xu;Wang, Zhuo;Yuan, Bing;Li, Mengkai;Liu, Changlong;
10:84:27 The Structure Research of Co Ions Implanted in Single Crystal ZnO
DOI:10.1080/10584587.2011.576173 JN:INTEGRATED FERROELECTRICS PY:2011
TC:1 AU: Gao, Xing-Xin;Li, Gong-Ping;Li, Tian-Jing;Pan, Xiao-Dong;Hu, Feng-Chun;He, Bo;Bao, Liang-Man;
10:85:1 Phase separation in nanocomposite indium tin oxide thin films grown at room temperature: on the role of oxygen deficiency
DOI:10.1039/c2jm16753k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Millon, Eric;Nistor, Magdalena;Hebert, Christian;Davila, Yohely;Perriere, Jacques;
10:85:2 Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity
DOI:10.1039/c3ta14816e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:1 AU: Leichtweiss, Thomas;Henning, Ralph A.;Koettgen, Julius;Schmidt, Ruediger M.;Hollaender, Bernd;Martin, Manfred;Wuttig, Matthias;Janek, Juergen;
10:85:3 Pure and Nb-doped TiO1.5 films grown by pulsed-laser deposition for transparent p-n homojunctions
DOI:10.1016/j.apsusc.2010.10.149 JN:APPLIED SURFACE SCIENCE PY:2011
TC:23 AU: Le Boulbar, E.;Millon, E.;Mathias, J.;Boulmer-Leborgne, C.;Nistor, M.;Gherendi, F.;Sbai, N.;Quoirin, J. B.;
10:85:4 Characterization of oxygen deficient gallium oxide films grown by PLD
DOI:10.1016/j.apsusc.2012.10.136 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Petitmangin, A.;Gallas, B.;Hebert, C.;Perriere, J.;Binet, L.;Barboux, P.;Portier, X.;
10:85:5 Effects of substrate and ambient gas on epitaxial growth indium oxide thin films
DOI:10.1016/j.apsusc.2014.04.056 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Nistor, M.;Seiler, W.;Hebert, C.;Matei, E.;Perriere, J.;
10:85:6 Formation of metallic nanoclusters in oxygen deficient indium tin oxide films
DOI:10.1063/1.3596578 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Perriere, J.;Hebert, C.;Petitmangin, A.;Portier, X.;Seiler, W.;Nistor, M.;
10:85:7 On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films
DOI:10.1063/1.4896379 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Perriere, J.;Hebert, C.;Jedrecy, N.;Seiler, W.;Zanellato, O.;Portier, X.;Perez-Casero, R.;Millon, E.;Nistor, M.;
10:85:8 Phase separation in oxygen deficient gallium oxide films grown by pulsed-laser deposition
DOI:10.1016/j.matchemphys.2011.12.078 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:5 AU: Hebert, C.;Petitmangin, A.;Perriere, J.;Millon, E.;Petit, A.;Binet, L.;Barboux, P.;
10:85:9 Metallic clusters in nonstoichiometric gallium oxide films
DOI:10.1063/1.3531536 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Petitmangin, Aline;Hebert, Christian;Perriere, Jacques;Gallas, Bruno;Binet, Laurent;Barboux, Philippe;Vermaut, Philippe;
10:85:10 Doping effects on growth and properties of oxygen deficient Ga oxide films
DOI:10.1016/j.tsf.2013.10.058 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Hebert, C.;Perriere, J.;
10:85:11 Nanocomposite oxide thin films grown by pulsed energy beam deposition
DOI:10.1016/j.apsusc.2010.11.139 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Nistor, M.;Petitmangin, A.;Hebert, C.;Seiler, W.;
10:85:12 Synthesis and characterization of beta-Ga2O3 nanowires on amorphous substrates using radio-frequency powder sputtering
DOI:10.1016/j.jcrysgro.2014.11.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Lee, S. Y.;Kang, H. C.;
10:85:13 Advanced functional oxide thin films grown by pulsed-laser deposition
DOI:10.1016/j.apsusc.2012.10.190 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Millon, E.;
10:85:14 Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature
DOI:10.1063/1.4758383 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Sun, Jian;Yang, Weifeng;Huang, Yanhua;Lai, Weng Soon;Lee, Alex Y. S.;Wang, Chiou Fu;Gong, Hao;
10:85:15 Epitaxial undoped indium oxide thin films: Structural and physical properties
DOI:10.1016/j.solmat.2013.04.002 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:7 AU: Seiler, W.;Nistor, M.;Hebert, C.;Perriere, J.;
10:85:16 Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide
DOI:10.1063/1.3485670 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Sun, Jian;Gong, Hao;
10:85:17 Crystal defects and related stress in Y2O3 thin films: Origin, modeling, and consequence on the stability of the C-type structure
DOI:10.1103/PhysRevB.84.014104 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Lacroix, Bertrand;Paumier, Fabien;Gaboriaud, Rolly J.;
10:85:18 Transport properties and microstructures of polycrystalline In2O3-ZnO thin films
DOI:10.1063/1.3452375 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Makise, K.;Mitsuishi, K.;Kokubo, N.;Yamaguchi, T.;Shinozaki, B.;Yano, K.;Inoue, K.;Nakamura, H.;
10:85:19 A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering
DOI:10.1016/j.solmat.2013.08.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:2 AU: Chen, Aqing;Zhu, Kaigui;Zhong, Huicai;Shao, Qingyi;Ge, Guanglu;
10:85:20 Phase-change activities on gallium-doped indium oxide
DOI:10.1063/1.3494089 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Wang, S. -L.;Peng, L. -H.;
10:85:21 Oxygen deficiency in oxide films grown by PLD
DOI:10.1016/j.apsusc.2010.10.075 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Davila, Y.;Petitmangin, A.;Hebert, C.;Perriere, J.;Seiler, W.;
10:85:22 Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates
DOI:10.1063/1.3475016 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Yuk, J. M.;Lee, J. Y.;Kim, Y.;No, Y. S.;Kim, T. W.;Choi, W. K.;
10:85:23 Angular distribution of species in pulsed energy beam deposition of oxide films
DOI:10.1016/j.apsusc.2012.01.164 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Nistor, M.;Gherendi, F.;Mandache, N. B.;
10:85:24 Infrared transparency and electrical conductivity of non-stoichiometric InxOy films
DOI:10.1016/j.mseb.2010.05.020 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Joseph, Shay;Berger, Shlomo;
10:85:25 Optical transparency and electrical conductivity of nonstoichiometric ultrathin InxOy films
DOI:10.1116/1.3599463 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:2 AU: Joseph, Shay;Berger, Shlomo;
10:85:26 Synthesis, structuring and characterization of rare earth oxide thin films: Modeling of the effects of stress and defects on the phase stability
DOI:10.1016/j.tsf.2013.12.035 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Gaboriaud, R. J.;Paumier, F.;Lacroix, B.;
10:86:1 Transparent conductive Sb-doped SnO2/Ag multilayer films fabricated by magnetron sputtering for flexible electronics
DOI:10.1016/j.actamat.2013.05.031 JN:ACTA MATERIALIA PY:2013
TC:13 AU: Yu, Shihui;Zhang, Weifeng;Li, Linngxia;Xu, Dan;Dong, Helei;Jin, Yuxin;
10:86:2 Investigation on preparation and electric field tunable dielectric properties of novel bismuth magnesium niobate transparent capacitors for opto-electronic devices
DOI:10.1039/c4tc01884b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Yu, Shihui;Li, Lingxia;Xu, Dan;Dong, Heilei;Jin, Yuxin;
10:86:3 Characterization of SnO2/Cu/SnO2 multilayers for high performance transparent conducting electrodes
DOI:10.1016/j.tsf.2014.04.064 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Yu, Shihui;Li, Lingxia;Xu, Dan;Dong, Helei;Jin, Yuxin;
10:86:4 Fabrication and characterization of electric field tunable Bi1.5MgNb1.5O7 transparent capacitors
DOI:10.1016/j.matlet.2013.10.071 JN:MATERIALS LETTERS PY:2014
TC:8 AU: Yu, Shihui;Li, Lingxia;Dong, Heilei;Xu, Dan;Jin, Yuxin;
10:86:5 Transparent conducting Sb-doped SnO2 thin films grown by pulsed laser deposition
DOI:10.1016/j.jnoncrysol.2012.09.009 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:16 AU: Yu, Shihui;Ding, Linghong;Xue, Chuang;Chen, Li;Zhang, W. F.;
10:86:6 Effects of substrate temperature on the dielectric properties of Bi1.5MgNb1.5O7 thin films derived from pulsed laser deposition
DOI:10.1016/j.matchemphys.2014.08.009 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Yu, Shihui;Li, Lingxia;Zhang, Weifeng;Xu, Dan;Dong, Helei;Jin, Yuxin;
10:86:7 Optimization of SnO2/Ag/SnO2 tri-layer films as transparent composite electrode with high figure of merit
DOI:10.1016/j.tsf.2013.11.109 JN:THIN SOLID FILMS PY:2014
TC:10 AU: Yu, Shihui;Zhang, Weifeng;Li, Lingxia;Xu, Dan;Dong, Helei;Jin, Yuxin;
10:86:8 Influence of oxygen pressure on the structural, electrical and optical properties of Nb-doped ZnO thin films prepared by pulsed laser deposition
DOI:10.1016/j.apsusc.2013.11.119 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Wu, Muying;Yu, Shihui;He, Lin;Zhang, Geng;Ling, Dongxiong;Zhang, Weifeng;
10:86:9 Self-limited grain growth, dielectric, leakage and ferroelectric properties of nanocrystalline BiFeO3 thin films by chemical solution deposition
DOI:10.1016/j.actamat.2012.11.048 JN:ACTA MATERIALIA PY:2013
TC:8 AU: Tang, Xianwu;Zhu, Xuebin;Dai, Jianming;Sun, Yuping;
10:86:10 Effects of growth temperature on structure and electrical properties of dielectric (Ba,Sr)TiO3 capacitors with transparent conducting oxide electrodes
DOI:10.1016/j.jallcom.2011.05.046 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Liang, Yuan-Chang;Huang, Chiem-Lum;Hu, Chia-Yen;
10:86:11 Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant
DOI:10.1016/j.apsusc.2013.09.107 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Yu, Shihui;Zhang, Weifeng;Li, Linngxia;Xu, Dan;Dong, Helei;Jin, Yuxin;
10:86:12 Grain growth, microstructure and surface modification of textured CeO2 thin films on Ni substrate
DOI:10.1016/j.actamat.2011.04.029 JN:ACTA MATERIALIA PY:2011
TC:21 AU: Mihalache, V.;Pasuk, I.;
10:86:13 Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate
DOI:10.1016/j.tsf.2013.01.068 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Zhu, Guisheng;Xu, Huarui;Yang, Zupei;Yu, Aibing;
10:86:14 Optimization of Nb2O5/Ag/Nb2O5 multilayers as transparent composite electrode on flexible substrate with high figure of merit
DOI:10.1063/1.4767662 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:22 AU: Dhar, Aritra;Alford, T. L.;
10:86:15 Highly tunable compositionally graded (1-x)Ba(Zr0.2Ti0.8)O-3-x(Ba0.7Ca0.3)TiO3 multilayer with low temperature capacitance coefficients
DOI:10.1016/j.matlet.2012.07.102 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Bhardwaj, Chandan;Daniel, B. S. S.;Kaur, Davinder;
10:86:16 Influence of temperature annealing on optical properties of SrTiO3/BaTiO3 multilayered films on indium tin oxide
DOI:10.1016/j.apsusc.2010.01.072 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Supasai, T.;Dangtip, S.;Learngarunsri, P.;Boonyopakorn, N.;Wisitsoraat, A.;Hodak, Satreerat K.;
10:86:17 Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets
DOI:10.1016/j.apsusc.2012.02.061 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Tseng, Chun-An;Lin, Jing-Chie;Chang, Yu-Fong;Chyou, San-Der;Peng, Kun-Cheng;
10:86:18 Influence of gamma irradiation on the refractive index of Fe-doped barium titanate thin films
DOI:10.1016/j.tsf.2010.05.023 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Kongwut, O.;Kornduangkeaw, A.;Jangsawang, N.;Hodak, Satreerat K.;
10:86:19 Dielectric enhancement of BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer thin films prepared by RF magnetron sputtering
DOI:10.1016/j.ceramint.2012.08.006 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Xu, Zunping;Yan, Dongxu;Xiao, Dingquan;Yu, Ping;Zhu, Jianguo;
10:86:20 Improved dielectric and insulating properties of Ba0.5Sr0.5TiO3 films fabricated by laser molecular-beam epitaxy with active oxygen
DOI:10.1016/j.jcrysgro.2011.03.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Wang, S. Y.;Qiu, Xue;Liu, W. F.;Zhu, Yun;Li, D. J.;
10:86:21 Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition
DOI:10.1016/j.tsf.2011.01.130 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Li, N.;Li, W. L.;Zhang, S. Q.;Fei, W. D.;
10:86:22 Enhanced dielectric and tunable characteristics of K-doped Ba0.5Sr0.5TiO3 thin films prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2012.11.012 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Sekhar, Koppole C.;Hong, Kyung Pyo;Key, Sung Hun;Han, Chan Su;Kim, Jun Chul;Kim, Dong Soo;Park, Jong Chul;Cho, Yong Soo;
10:86:23 Investigations on the structural, optical and electrical properties of Nb-doped SnO2 thin films
DOI:10.1007/s10853-011-5504-x JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:9 AU: Gokulakrishnan, V.;Parthiban, S.;Jeganathan, K.;Ramamurthi, K.;
10:86:24 Dielectric enhancement of BaTiO3/BaSrTiO3/SrTiO3 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method
DOI:10.1016/j.matlet.2011.08.004 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Zhao, Ning;Wan, Lixi;Cao, Liqiang;Yu, Daquan;Yu, Shuhui;Sun, Rong;
10:86:25 Epitaxial growth of CeO2 thin film on cube textured NiW substrate using a propionate-based metalorganic deposition (MOD) method
DOI:10.1016/j.matchemphys.2012.01.092 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:6 AU: Ciontea, L.;Ristoiu, T.;Mos, R. B.;Nasui, M.;Petrisor, T., Jr.;Gabor, M. S.;Mancini, A.;Rufoloni, A.;Celentano, G.;Petrisor, T.;
10:87:1 Size-Tunable Phosphorescence in Colloidal Metastable gamma-Ga2O3 Nanocrystals
DOI:10.1021/ja101333h JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:38 AU: Wang, Ting;Farvid, Shokouh S.;Abulikemu, Mutalifu;Radovanovic, Pavle V.;
10:87:2 Simultaneous Tailoring of Phase Evolution and Dopant Distribution in the Glassy Phase for Controllable Luminescence
DOI:10.1021/ja108512g JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:39 AU: Zhou, Shifeng;Jiang, Nan;Miura, Kiyotaka;Tanabe, Setsuhisa;Shimizu, Masahiro;Sakakura, Masaaki;Shimotsuma, Yasuhiko;Nishi, Masayuki;Qiu, Jianrong;Hirao, Kazuyuki;
10:87:3 Evidence of Charge-Transfer Ferromagnetism in Transparent Diluted Magnetic Oxide Nanocrystals: Switching the Mechanism of Magnetic Interactions
DOI:10.1021/ja501888a JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:2 AU: Farvid, Shokouh S.;Sabergharesou, Tahereh;Huffluss, Lisa N.;Hegde, Manu;Prouzet, Eric;Radovanovic, Pavle V.;
10:87:4 Interplay between Size, Composition, and Phase Transition of Nanocrystalline Cr3+-Doped BaTiO3 as a Path to Multiferroism in Perovskite-Type Oxides
DOI:10.1021/ja2091678 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:13 AU: Ju, Ling;Sabergharesou, Tahereh;Stamplecoskie, Kevin G.;Hegde, Manu;Wang, Ting;Combe, Nicole A.;Wu, Hongyu;Radovanovic, Pavle V.;
10:87:5 Colloidal Gallium Indium Oxide Nanocrystals: A Multifunctional Light-Emitting Phosphor Broadly Tunable by Alloy Composition
DOI:10.1021/ja111514u JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:21 AU: Farvid, Shokouh S.;Wang, Ting;Radovanovic, Pavle V.;
10:87:6 Phase-Controlled Synthesis of Colloidal In2O3 Nanocrystals via Size-Structure Correlation
DOI:10.1021/cm9014783 JN:CHEMISTRY OF MATERIALS PY:2010
TC:39 AU: Farvid, Shokouh S.;Dave, Neeshma;Radovanovic, Pavle V.;
10:87:7 Electronic structure and magnetic properties of sub-3 nm diameter Mn-doped SnO2 nanocrystals and nanowires
DOI:10.1063/1.4813011 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Sabergharesou, Tahereh;Wang, Ting;Ju, Ling;Radovanovic, Pavle V.;
10:87:8 Influence of the Host Lattice Electronic Structure on Dilute Magnetic Interactions in Polymorphic Cr(III)-Doped In2O3 Nanocrystals
DOI:10.1021/cm303317t JN:CHEMISTRY OF MATERIALS PY:2013
TC:12 AU: Farvid, Shokouh S.;Hegde, Manu;Radovanovic, Pavle V.;
10:87:9 Defect rich seed mediated growth: a novel synthesis method to enhance defect emission in nanocrystals
DOI:10.1039/c3tc32107j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Asok, Adersh;Kulkarni, A. R.;Gandhi, Mayuri N.;
10:87:10 Correlation between native defects and dopants in colloidal lanthanide-doped Ga2O3 nanocrystals: a path to enhance functionality and control optical properties
DOI:10.1039/c3tc31823k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Wang, Ting;Layek, Arunasish;Hosein, Ian D.;Chirmanov, Vadim;Radovanovic, Pavle V.;
10:87:11 Synthesis and surface control of colloidal Cr3+-doped SnO2 transparent magnetic semiconductor nanocrystals
DOI:10.1088/0957-4484/21/13/134023 JN:NANOTECHNOLOGY PY:2010
TC:24 AU: Dave, N.;Pautler, B. G.;Farvid, S. S.;Radovanovic, P. V.;
10:87:12 Tuning Manganese Dopant Spin Interactions in Single GaN Nanowires at Room Temperature
DOI:10.1021/nn201482y JN:ACS NANO PY:2011
TC:14 AU: Hegde, Manu;Farvid, Shokouh S.;Hosein, Ian D.;Radovanovic, Pavle V.;
10:87:13 Self-Limited Nanocrystallization-Mediated Activation of Semiconductor Nanocrystal in an Amorphous Solid
DOI:10.1002/adfm.201300969 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:5 AU: Zhou, Shifeng;Li, Chaoyu;Yang, Guang;Bi, Gang;Xu, Beibei;Hong, Zhanglian;Miura, Kiyotaka;Hirao, Kazuyuki;Qiu, Jianrong;
10:87:14 Synthesis and morphological transition of Ni2+ doped Rh-In2O3 nanocrystals under LiNO3 molten salts
DOI:10.1063/1.4746388 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Sun, Qingbo;Zeng, Yuping;Jiang, Dongliang;
10:87:15 Multi-color light emissions from mesoporous silica particles embedded with Ga2O3 nanocrystals
DOI:10.1364/OME.4.000518 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Zong, Yanhua;Meng, Xiangeng;Fujita, Koji;Tanaka, Katsuhisa;
10:87:16 Self-Assembled Metastable gamma-Ga2O3 Nanofl owers with Hexagonal Nanopetals for Solar-Blind Photodetection
DOI:10.1002/adma.201402047 JN:ADVANCED MATERIALS PY:2014
TC:5 AU: Teng, Yue;Song, Le Xin;Ponchel, Anne;Yang, Zheng Kun;Xia, Juan;
10:87:17 Origin of size-dependent photoluminescence decay dynamics in colloidal gamma-Ga2O3 nanocrystals
DOI:10.1063/1.3698390 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Hegde, Manu;Wang, Ting;Miskovic, Zoran L.;Radovanovic, Pavle V.;
10:87:18 Phase Transformation of Colloidal In2O3 Nanocrystals Driven by the Interface Nucleation Mechanism: A Kinetic Study
DOI:10.1021/ja211627r JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:13 AU: Farvid, Shokouh S.;Radovanovic, Pavle V.;
10:87:19 Electronic structure and magnetism of Mn dopants in GaN nanowires: Ensemble vs single nanowire measurements
DOI:10.1063/1.3664119 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Farvid, Shokouh S.;Hegde, Manu;Hosein, Ian D.;Radovanovic, Pavle V.;
10:87:20 Space-selective enhancement of blue photoluminescence in gallium germanosilicate glass through laser-induced nanostructuring
DOI:10.1016/j.matlet.2014.02.026 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Lotarev, Sergey V.;Lipatiev, Alexey S.;Golubev, Nikita V.;Ignat'eva, Elena S.;Usmanova, Liliana Z.;Priseko, Yury S.;Lepekhin, Nikolay M.;Paleari, Alberto;Sigaev, Vladimir N.;
10:87:21 Local order of Ca in a CaF2-Al2O3-SiO2 glass by electron energy-loss spectroscopy
DOI:10.1063/1.3608118 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Jiang, Nan;
10:87:22 Study of magnetic behaviour of Fe-doped SnO2 powders prepared by chemical method
DOI:10.1016/j.matchemphys.2012.04.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Bilovol, V.;Herme, C.;Jacobo, S.;Cabrera, A. F.;
10:88:1 Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films
DOI:10.1016/j.jallcom.2011.09.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:33 AU: Tsay, Chien-Yie;Fan, Kai-Shiung;Lei, Chien-Ming;
10:88:2 Influence of K-doping on the optical properties of ZnO thin films grown by chemical bath deposition method
DOI:10.1016/j.jallcom.2013.01.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Shanmuganathan, G.;Banu, I. B. Shameem;Krishnan, S.;Ranganathan, B.;
10:88:3 Thermally stable transparent conducting and highly infrared reflective Ga-doped ZnO thin films by metal organic chemical vapor deposition
DOI:10.1016/j.optmat.2010.12.008 JN:OPTICAL MATERIALS PY:2011
TC:31 AU: Zhao, J. L.;Sun, X. W.;Ryu, H.;Moon, Y. B.;
10:88:4 Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature
DOI:10.1063/1.3541885 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Wong, L. M.;Chiam, S. Y.;Huang, J. Q.;Wang, S. J.;Pan, J. S.;Chim, W. K.;
10:88:5 Boron doped nanostructure ZnO films onto ITO substrate
DOI:10.1016/j.jallcom.2010.12.038 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:31 AU: Caglar, Mujdat;Ilican, Saliha;Caglar, Yasemin;Yakuphanoglu, Fahrettin;
10:88:6 Effects of Ga concentration on electronic and optical properties of Ga-doped ZnO from first principles calculations
DOI:10.1016/j.optmat.2012.10.022 JN:OPTICAL MATERIALS PY:2013
TC:18 AU: Wu, Hsuan-Chung;Peng, Yen-Chun;Chen, Chieh-Cheng;
10:88:7 Examining the transparency of gallium-doped zinc oxide for photovoltaic applications
DOI:10.1016/j.solmat.2011.04.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:12 AU: Wong, L. M.;Chiam, S. Y.;Huang, J. Q.;Wang, S. J.;Chim, W. K.;Pan, J. S.;
10:88:8 Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition
DOI:10.1016/j.tsf.2013.08.069 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Wong, L. M.;Chiam, S. Y.;Chim, W. K.;Pan, J. S.;Wang, S. J.;
10:88:9 Effects of intrinsic defects on electronic structure and optical properties of Ga-doped ZnO
DOI:10.1016/j.jallcom.2014.07.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Lee, Ming-Hsien;Peng, Yen-Chun;Wu, Hsuan-Chung;
10:88:10 Sol-gel derived undoped and boron-doped ZnO semiconductor thin films: Preparation and characterization
DOI:10.1016/j.ceramint.2013.02.086 JN:CERAMICS INTERNATIONAL PY:2013
TC:10 AU: Tsay, Chien-Yie;Hsu, Wei-Tse;
10:88:11 Electronic and optical properties of Ga-doped ZnO
DOI:10.1016/j.tsf.2014.04.037 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Lee, Yih-Shing;Peng, Yen-Chun;Lu, Jong-Hong;Zhu, Yu-Ren;Wu, Hsuan-Chung;
10:88:12 Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread
DOI:10.1016/j.apsusc.2010.03.144 JN:APPLIED SURFACE SCIENCE PY:2010
TC:13 AU: Jung, Keun;Choi, Won-Kook;Yoon, Seok-Jin;Kim, Hyun Jae;Choi, Ji-Won;
10:88:13 Characteristics of indium zinc oxide thin films prepared by direct current magnetron sputtering for flexible solar cells
DOI:10.1016/j.solmat.2010.02.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:1 AU: Bin Xiao, Yu;Kong, Seon Mi;Kim, Eun Ho;Chung, Chee Won;
10:88:14 Effect of boron doping on optical properties of sol-gel based nanostructured zinc oxide films on glass
DOI:10.1016/j.materresbull.2011.08.038 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:13 AU: Jana, Sunirmal;Vuk, Angela Surca;Mallick, Aparajita;Orel, Boris;Biswas, Prasanta Kumar;
10:88:15 Effects of oxygen plasma treatment on the surface properties of Ga-doped ZnO thin films
DOI:10.1007/s00339-013-7718-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Xue, Ya;He, Haiping;Jin, Yizheng;Lu, Bin;Cao, Hongtao;Jiang, Jie;Bai, Sai;Ye, Zhizhen;
10:88:16 Origins of low resistivity in Al ion-implanted ZnO bulk single crystals
DOI:10.1063/1.3600072 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Oga, T.;Izawa, Y.;Kuriyama, K.;Kushida, K.;Kinomura, A.;
10:88:17 Establishment of the correlation law between electron density, infrared absorption and doping concentration in Ga3+-doped ZnO
DOI:10.1016/j.materresbull.2012.12.016 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Trenque, Isabelle;Mornet, Stephane;Duguet, Etienne;Gaudon, Manuel;
10:89:1 Aerosol assisted chemical vapour deposition of hydrophobic TiO2-SnO2 composite film with novel microstructure and enhanced photocatalytic activity
DOI:10.1039/c3ta10845g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:22 AU: Ponja, Sapna;Sathasivam, Sanjayan;Chadwick, Nicholas;Kafizas, Andreas;Bawaked, Salem M.;Obaid, Abdullah Y.;Al-Thabaiti, Shaeel;Basahel, Sulaiman N.;Parkin, Ivan P.;Carmalt, Claire J.;
10:89:2 Enhanced transparent-conducting fluorine-doped tin oxide films formed by Aerosol-Assisted Chemical Vapour Deposition
DOI:10.1039/c2tc00400c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:20 AU: Noor, Nuruzzaman;Parkin, Ivan P.;
10:89:3 Zinc oxide thin films: Characterization and potential applications
DOI:10.1016/j.tsf.2009.12.020 JN:THIN SOLID FILMS PY:2010
TC:32 AU: O'Brien, Shane;Nolan, Mark G.;Copuroglu, Mehmet;Hamilton, Jeff A.;Povey, Ian;Pereira, Luis;Martins, Rodrigo;Fortunato, Elvira;Pemble, Martyn;
10:89:4 The combinatorial atmospheric pressure chemical vapour deposition (cAPCVD) of a gradating N-doped mixed phase titania thin film
DOI:10.1039/b914117k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:29 AU: Kafizas, Andreas;Parkin, Ivan P.;
10:89:5 Aerosol-Assisted Chemical Vapor Deposition of Transparent Conductive Gallium-Indium-Oxide Films
DOI:10.1021/cm102292b JN:CHEMISTRY OF MATERIALS PY:2011
TC:30 AU: Knapp, Caroline E.;Hyett, Geoffrey;Parkin, Ivan P.;Carmalt, Claire J.;
10:89:6 Aerosol Assisted Chemical Vapor Deposition of Transparent Conductive Zinc Oxide Films
DOI:10.1021/cm302913b JN:CHEMISTRY OF MATERIALS PY:2012
TC:23 AU: Bhachu, Davinder S.;Sankar, Gopinathan;Parkin, Ivan P.;
10:89:7 Solution Processing Route to Multifunctional Titania Thin Films: Highly Conductive and Photcatalytically Active Nb:TiO2
DOI:10.1002/adfm.201400338 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:14 AU: Bhachu, Davinder S.;Sathasivam, Sanjayan;Sankar, Gopinathan;Scanlon, David O.;Cibin, Giannantonio;Carmalt, Claire J.;Parkin, Ivan P.;Watson, Graeme W.;Bawaked, Salem M.;Obaid, Abdullah Y.;Al-Thabaiti, Shaeel;Basahel, Sulaiman N.;
10:89:8 Combinatorial atmospheric pressure chemical vapour deposition (cAPCVD) of niobium doped anatase; effect of niobium on the conductivity and photocatalytic activity
DOI:10.1039/c0jm01244k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:29 AU: Kafizas, Andreas;Dunnill, Charles. W.;Parkin, Ivan P.;
10:89:9 Tantalum and Titanium doped In2O3 Thin Films by Aerosol-Assisted Chemical Vapor Deposition and their Gas Sensing Properties
DOI:10.1021/cm300596c JN:CHEMISTRY OF MATERIALS PY:2012
TC:20 AU: Bloor, Leanne G.;Manzi, Joe;Binions, Russell;Parkin, Ivan P.;Pugh, David;Afonja, Ayo;Blackman, Christopher S.;Sathasivam, Sanjayan;Carmalt, Claire J.;
10:89:10 The use of combinatorial aerosol-assisted chemical vapour deposition for the formation of gallium-indium-oxide thin films
DOI:10.1039/c1jm11606a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:14 AU: Knapp, Caroline E.;Kafizas, Andreas;Parkin, Ivan P.;Carmalt, Claire J.;
10:89:11 Visible light photocatalysts-N-doped TiO2 by sol-gel, enhanced with surface bound silver nanoparticle islands
DOI:10.1039/c1jm11557j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:25 AU: Dunnill, Charles W.;Ansari, Zarrin;Kafizas, Andreas;Perni, Stefano;Morgan, David. J.;Wilson, Mike;Parkin, Ivan P.;
10:89:12 Combinatorial aerosol assisted chemical vapour deposition of a photocatalytic mixed SnO2/TiO2 thin film
DOI:10.1039/c4ta00545g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:5 AU: Chadwick, Nicholas;Sathasivam, Sanjayan;Kafizas, Andreas;Bawaked, Salem M.;Obaid, Abdullah Y.;Al-Thabaiti, Shaeel;Basahel, Sulaiman N.;Parkin, Ivan P.;Carmalt, Claire J.;
10:89:13 Aerosol assisted chemical vapor deposition of conductive and photocatalytically active tantalum doped titanium dioxide films
DOI:10.1039/c4ta01618a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:5 AU: Bawaked, Salem M.;Sathasivam, Sanjayan;Bhachu, Davinder S.;Chadwick, Nicolas;Obaid, Abdullah Y.;Al-Thabaiti, Shaeel;Basahel, Sulaiman N.;Carmalt, Claire J.;Parkin, Ivan P.;
10:89:14 An investigation of the bandgap and Urbach tail of vacuum-evaporated SnO2 thin films
DOI:10.1016/j.renene.2012.01.045 JN:RENEWABLE ENERGY PY:2013
TC:7 AU: Ikhmayies, Shadia J.;Ahmad-Bitar, Riyad N.;
10:89:15 Halide doping effects on transparent conducting oxides formed by aerosol assisted chemical vapour deposition
DOI:10.1016/j.tsf.2012.10.110 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Noor, Nuruzzaman;Parkin, Ivan P.;
10:89:16 Solution Processing of GaAs Thin Films for Photovoltaic Applications
DOI:10.1021/cm501280e JN:CHEMISTRY OF MATERIALS PY:2014
TC:5 AU: Sathasivam, Sanjayan;Arnepalli, Ranga Rao;Kumar, Bhaskar;Singh, Kaushal K.;Visser, Robert J.;Blackman, Christopher S.;Carmalt, Claire J.;
10:89:17 A fast and effective method for N-doping TiO2 by post treatment with liquid ammonia: visible light photocatalysis
DOI:10.1016/j.tsf.2014.04.067 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Powell, Michael J.;Palgrave, Robert G.;Dunnill, Charles W.;Parkin, Ivan P.;
10:89:18 Chemical Vapor Deposition of GaP and GaAs Thin Films From [(Bu2Ga)-Bu-n(mu-(EBu2)-Bu-t)(2)(GaBu2)-Bu-n] (E = P or As) and Ga((PBu2)-Bu-t)(3)
DOI:10.1021/cm202158a JN:CHEMISTRY OF MATERIALS PY:2011
TC:3 AU: Cheng, Fei;George, Kathryn;Hector, Andrew L.;Jura, Marek;Kroner, Anna;Levason, William;Nesbitt, John;Reid, Gillian;Smith, David C.;Wilson, James W.;
10:89:19 The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition
DOI:10.1016/j.tsf.2010.07.051 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Salauen, A.;Hamilton, J. A.;Iacopino, D.;Newcomb, S. B.;Nolan, M. G.;Padmanabhan, S. C.;Povey, I. M.;Salauen, M.;Pemble, M. E.;
10:89:20 Antimicrobial activity of copper and copper(I) oxide thin films deposited via aerosol-assisted CVD
DOI:10.1039/c4tb00196f JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2014
TC:5 AU: Hassan, Iman A.;Parkin, Ivan P.;Nair, Sean P.;Carmalt, Claire J.;
10:89:21 Air purification by heterogeneous photocatalytic oxidation with multi-doped thin film titanium dioxide
DOI:10.1016/j.tsf.2013.04.016 JN:THIN SOLID FILMS PY:2013
TC:3 AU: O'Keeffe, Cormac;Gannon, Paul;Gilson, Paul;Kafizas, Andreas;Parkin, Ivan P.;Binions, Russell;
10:89:22 Deposition of thin film SnO2:F onto aluminium foil for use in flexible tandem solar cells
DOI:10.1016/j.tsf.2011.05.069 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Yates, H. M.;Evans, P.;Sheel, D. W.;Heessels, A.;Ammerlaan, J.;Dagkaldiran, Ue;Gordijn, A.;
10:89:23 The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition (vol 518, pg 3921, 2010)
DOI:10.1016/j.tsf.2010.09.020 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Salauen, A.;Hamilton, J. A.;Iacopino, D.;Newcomb, S. B.;Nolan, M. G.;Padmanabhan, S. C.;Povey, I. M.;Salauen, M.;Pemble, M. E.;
10:90:1 Inducing electrocatalytic functionality in ZnO thin film by N doping to realize a third generation uric acid biosensor
DOI:10.1016/j.bios.2013.11.015 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:3 AU: Jindal, Kajal;Tomar, Monika;Gupta, Vinay;
10:90:2 Nanostructured nickel oxide-chitosan film for application to cholesterol sensor
DOI:10.1063/1.3553765 JN:APPLIED PHYSICS LETTERS PY:2011
TC:33 AU: Singh, Jay;Kalita, Prasanta;Singh, Manish Kumar;Malhotra, B. D.;
10:90:3 Highly sensitive and selective uric acid biosensor based on RF sputtered NiO thin film
DOI:10.1016/j.bios.2011.09.026 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:25 AU: Arora, Kashima;Tomar, Monika;Gupta, Vinay;
10:90:4 CuO thin film based uric acid biosensor with enhanced response characteristics
DOI:10.1016/j.bios.2012.03.043 JN:BIOSENSORS & BIOELECTRONICS PY:2012
TC:19 AU: Jindal, Kajal;Tomar, Monika;Gupta, Vinay;
10:90:5 Zinc oxide-multiwalled carbon nanotubes hybrid nanocomposite based urea biosensor
DOI:10.1039/c3tb20935k JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2013
TC:4 AU: Tak, Manvi;Gupta, Vinay;Tomar, Monika;
10:90:6 NiO nanoparticle-based urea biosensor
DOI:10.1016/j.bios.2012.07.062 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:24 AU: Tyagi, Manisha;Tomar, Monika;Gupta, Vinay;
10:90:7 Zirconia based nucleic acid sensor for Mycobacterium tuberculosis detection
DOI:10.1063/1.3293447 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Das, Maumita;Sumana, Gajjala;Nagarajan, R.;Malhotra, B. D.;
10:90:8 Flower-like ZnO nanostructure based electrochemical DNA biosensor for bacterial meningitis detection
DOI:10.1016/j.bios.2014.03.036 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:13 AU: Tak, Manvi;Gupta, Vinay;Tomar, Monika;
10:90:9 Influence of surface defects in ZnO thin films on its biosensing response characteristic
DOI:10.1063/1.3633212 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Saha, Shibu;Gupta, Vinay;
10:90:10 Third generation biosensing matrix based on Fe-implanted ZnO thin film
DOI:10.1063/1.3496456 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Saha, Shibu;Gupta, Vinay;Sreenivas, K.;Tan, H. H.;Jagadish, C.;
10:90:11 Ring like self assembled Ni nanoparticles based biosensor for food toxin detection
DOI:10.1063/1.3690044 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Kalita, Prasanta;Singh, Jay;Singh, Manish Kumar;Solanki, Pratima R.;Sumana, G.;Malhotra, B. D.;
10:90:12 Glad assisted synthesis of NiO nanorods for realization of enzymatic reagentless urea biosensor
DOI:10.1016/j.bios.2013.08.020 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:6 AU: Tyagi, Manisha;Tomar, Monika;Gupta, Vinay;
10:90:13 Al:ZnO thin film: An efficient matrix for cholesterol detection
DOI:10.1063/1.4768450 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Batra, Neha;Tomar, Monika;Gupta, Vinay;
10:90:14 A highly efficient rare earth metal oxide nanorods based platform for aflatoxin detection
DOI:10.1039/c3tb20690d JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2013
TC:6 AU: Singh, Jay;Roychoudhury, Appan;Srivastava, Manish;Solanki, Pratima R.;Lee, Dong Won;Lee, Seung Hee;Malhotra, B. D.;
10:90:15 An amperometric uric acid biosensor based on Bis[sulfosuccinimidyl] suberate crosslinker/3-aminopropyltriethoxysilane surface modified ITO glass electrode
DOI:10.1016/j.tsf.2010.08.056 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Ahuja, Tarushee;Rajesh;Kumar, Devendra;Tanwar, Vinod Kumar;Sharma, Vikash;Singh, Nahar;Biradar, Ashok M.;
10:90:16 A novel urea biosensor based on zirconia
DOI:10.1016/j.tsf.2010.08.067 JN:THIN SOLID FILMS PY:2010
TC:16 AU: Sumana, G.;Das, Maumita;Srivastava, Saurabh;Malhotra, B. D.;
10:90:17 Efficient detection of total cholesterol using (ChEt-ChOx/ZnO/Pt/Si) bioelectrode based on ZnO matrix
DOI:10.1016/j.tsf.2014.04.045 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Batra, Neha;Sharma, Anjali;Tomar, Monika;Gupta, Vinay;
10:90:18 Iridium oxide pH sensor for biomedical applications. Case urea-urease in real urine samples
DOI:10.1016/j.bios.2012.07.022 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:18 AU: Prats-Alfonso, Elisabet;Abad, Llibertat;Casan-Pastor, Nieves;Gonzalo-Ruiz, Javier;Baldrich, Eva;
10:90:19 Comparative study of label-free electrochemical immunoassay on various gold nanostructures
DOI:10.1063/1.4827381 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Rafique, S.;Gao, C.;Li, C. M.;Bhatti, A. S.;
10:90:20 Complex dielectric constant of various biomolecules as a function of wavelength using surface plasmon resonance
DOI:10.1063/1.4890027 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Paliwal, Ayushi;Tomar, Monika;Gupta, Vinay;
10:90:21 Application of nanostructured ZnO films for electrochemical DNA biosensor
DOI:10.1016/j.tsf.2010.08.069 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Das, Maumita;Sumana, Gajjala;Nagarajan, R.;Malhotra, B. D.;
10:90:22 Nanostructured nickel oxide film for application to fish freshness biosensor
DOI:10.1063/1.4736578 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Yadav, Surendra K.;Singh, Jay;Agrawal, Ved Varun;Malhotra, B. D.;
10:90:23 Electrophoretically fabricated core-shell CNT-DNA biowires for biosensing
DOI:10.1039/c1jm12313k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:5 AU: Das, Maumita;Dhand, Chetna;Sumana, Gajjala;Srivastava, Avanish Kumar;Nagarajan, Rajamani;Malhotra, Bansi Dhar;
10:90:24 Antibody immobilized cysteamine functionalized-gold nanoparticles for aflatoxin detection
DOI:10.1016/j.tsf.2010.08.071 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Sharma, Aditya;Matharu, Zimple;Sumana, G.;Solanki, Pratima R.;Kim, C. G.;Malhotra, B. D.;
10:90:25 A microfabricated fringing field capacitive pH sensor with an integrated readout circuit
DOI:10.1063/1.4881263 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Arefin, Md Shamsul;Coskun, M. Bulut;Alan, Tuncay;Redoute, Jean-Michel;Neild, Adrian;Yuce, Mehmet Rasit;
10:90:26 ZnO sensing film thickness effects on the sensitivity of surface plasmon resonance sensors with angular interrogation
DOI:10.1016/j.mseb.2010.03.090 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Bao, Ming;Li, Ge;Jiang, Dongmei;Cheng, Wenjuan;Ma, Xueming;
10:90:27 PLD grown ZnO-K-3[Fe(CN)(6)] composite thin film for biosensing application
DOI:10.1016/j.tsf.2010.08.066 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Saha, Shibu;Arya, Sunil K.;Singh, S. P.;Sreenivas, K.;Malhotra, B. D.;Gupta, Vinay;
10:90:28 Ionic liquid assisted synthesis of nano Pd-Au particles and application for the detection of epinephrine, dopamine and uric acid
DOI:10.1016/j.tsf.2011.11.005 JN:THIN SOLID FILMS PY:2012
TC:17 AU: Tsai, Tsung-Hsuan;Thiagarajan, Soundappan;Chen, Shen-Ming;Cheng, Ching-Yi;
10:91:1 ZnO nanostructures: growth, properties and applications
DOI:10.1039/c2jm15548f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:117 AU: Djurisic, Aleksandra B.;Chen, Xinyi;Leung, Yu Hang;Ng, Alan Man Ching;
10:91:2 Synthesis of Au-Decorated V2O5@ZnO Heteronanostructures and Enhanced Plasmonic Photocatalytic Activity
DOI:10.1021/am501549n JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:8 AU: Yin, Haihong;Yu, Ke;Song, Changqing;Huang, Rong;Zhu, Ziqiang;
10:91:3 Self-assembled CdS/Au/ZnO heterostructure induced by surface polar charges for efficient photocatalytic hydrogen evolution
DOI:10.1039/c3ta01476b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:52 AU: Yu, Zong Bao;Xie, Ying Peng;Liu, Gang;Lu, Gao Qing (Max);Ma, Xiu Liang;Cheng, Hui-Ming;
10:91:4 Photochemical synthesis of ZnO/Ag2O heterostructures with enhanced ultraviolet and visible photocatalytic activity
DOI:10.1039/c4ta00464g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:26 AU: Ma, Shuaishuai;Xue, Jinjuan;Zhou, Yuming;Zhang, Zewu;
10:91:5 ZnO Nanocrystals: Surprisingly 'Alive'
DOI:10.1021/cm902240c JN:CHEMISTRY OF MATERIALS PY:2010
TC:35 AU: Ali, Moazzam;Winterer, Markus;
10:91:6 Green emission in ZnO nanostructures-Examination of the roles of oxygen and zinc vacancies
DOI:10.1016/j.apsusc.2013.01.160 JN:APPLIED SURFACE SCIENCE PY:2013
TC:16 AU: Leung, Y. H.;Chen, X. Y.;Ng, A. M. C.;Guo, M. Y.;Liu, F. Z.;Djurisic, A. B.;Chan, W. K.;Shi, X. Q.;Van Hove, M. A.;
10:91:7 Synthesis of ZnO nanorod grafted TiO2 nanotube 3-D arrayed heterostructure as supporting platform for nanoparticle deposition
DOI:10.1039/c1jm11659b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:16 AU: Huang, Yi-Ching;Chang, Shou-Yi;Lin, Chia-Feng;Tseng, Wenjea J.;
10:91:8 Heterogeneous Lollipop-like V2O5/ZnO Array: A Promising Composite Nanostructure for Visible Light Photocatalysis
DOI:10.1021/la101324e JN:LANGMUIR PY:2010
TC:37 AU: Zou, C. W.;Rao, Y. F.;Alyamani, A.;Chu, W.;Chen, M. J.;Patterson, D. A.;Emanuelsson, E. A. C.;Gao, W.;
10:91:9 Effect of starting properties and annealing on photocatalytic activity of ZnO nanoparticles
DOI:10.1016/j.apsusc.2013.07.043 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Liu, Fangzhou;Guo, Mu Yao;Leung, Yu Hang;Djurisic, Aleksandra B.;Alan Man Ching Ng;Chan, Wai Kin;
10:91:10 Nanostructured porous ZnO film with enhanced photocatalytic activity
DOI:10.1016/j.tsf.2011.02.070 JN:THIN SOLID FILMS PY:2011
TC:22 AU: Wang, Lina;Zheng, Yingying;Li, Xiaoyun;Dong, Wenjun;Tang, Weihua;Chen, Benyong;Li, Chaorong;Li, Xiao;Zhang, Tierui;Xu, Wei;
10:91:11 Hydrothermal treatment of ZnO nanostructures
DOI:10.1016/j.tsf.2011.11.019 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Chen, Xinyi;Ng, Alan Man Ching;Djurisic, Aleksandra B.;Ling, Chi Chung;Chan, Wai Kin;
10:91:12 Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique
DOI:10.1016/j.apsusc.2014.10.049 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Ahumada-Lazo, R.;Torres-Martinez, L. M.;Ruiz-Gomez, M. A.;Vega-Becerra, O. E.;Figueroa-Torres, M. Z.;
10:91:13 Doping-induced electron density modification at lattice sites of ZnO:Ga nanostructures: effects on vibrational and optical properties
DOI:10.1007/s10853-014-8242-z JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Saravanakumar, S.;Escobedo-Morales, A.;Pal, U.;Aranda, R. J.;Saravanan, R.;
10:91:14 Synthesis of CdTe/TiO2 nanoparticles and their photocatalytic activity
DOI:10.1016/j.materresbull.2013.06.052 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Li, Deliang;Wang, Shijun;Wang, Jing;Zhang, Xiaodan;Liu, Shanhu;
10:92:1 Electrical and optical properties of iron-doped CdO
DOI:10.1016/j.tsf.2009.11.026 JN:THIN SOLID FILMS PY:2010
TC:36 AU: Dakhel, A. A.;
10:92:2 Optical and magnetic properties of solid solutions of In2-xMnxO3 (0.05, 0.10 and 0.15) nanoparticles
DOI:10.1016/j.jallcom.2012.08.038 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:15 AU: Khatoon, Sarvari;Coolahan, Kelsey;Lofland, Samuel E.;Ahmad, Tokeer;
10:92:3 Silver nanoparticles: Large scale solvothermal synthesis and optical properties
DOI:10.1016/j.materresbull.2010.03.028 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:40 AU: Wani, Irshad A.;Khatoon, Sarvari;Ganguly, Aparna;Ahmed, Jahangeer;Ganguli, Ashok K.;Ahmad, Tokeer;
10:92:4 Solvothermal synthesis, optical and magnetic properties of nanocrystalline Cd1-xMnxO (0.04 < x = 0.10) solid solutions
DOI:10.1016/j.jallcom.2012.12.159 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Ahmad, Tokeer;Khatoon, Sarvari;Coolahan, Kelsey;Lofland, Samuel E.;
10:92:5 Wide band gap tunability of bulk Cd1-xCaxO
DOI:10.1063/1.3526300 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Srihari, Velaga;Sridharan, V.;Chandra, Sharat;Sastry, V. S.;Sahu, H. K.;Sundar, C. S.;
10:92:6 Optical and magnetic properties of Sn1-xMnxO2 dilute magnetic semiconductor nanoparticles
DOI:10.1016/j.jallcom.2014.06.161 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Ahmad, Tokeer;Khatoon, Sarvari;Coolahan, Kelsey;
10:92:7 Structural characterization and properties of nano-sized Cd1-xCoxO dilute magnetic semiconductors prepared by solvothermal method
DOI:10.1016/j.mssp.2013.09.025 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:9 AU: Ahmad, Tokeer;Khatoon, Sarvari;Lofland, Samuel E.;Thakur, Gohil S.;
10:92:8 Electrical and Optical Investigations on Tungsten-Incorporated CdO Thin Films
DOI:10.1007/s11664-012-2160-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:6 AU: Dakhel, A. A.;
10:92:9 Structural characterization, optical and magnetic properties of Ni-doped CdO dilute magnetic semiconductor nanoparticles
DOI:10.1557/jmr.2013.69 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:8 AU: Ahmad, Tokeer;Khatoon, Sarvari;Coolahan, Kelsey;Lofland, Samuel E.;
10:92:10 Influence of Mn doping on structural, optical and electrical properties of CdO thin films prepared by cost effective spray pyrolysis method
DOI:10.1016/j.mssp.2014.05.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Sankarasubramanian, K.;Soundarrajan, P.;Logu, T.;Kiruthika, S.;Sethuraman, K.;Babu, R. Ramesh;Ramamurthi, K.;
10:92:11 Improving carriers mobility in copper and iron-codoped CdO
DOI:10.1016/j.mssp.2013.10.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Dakhel, A. A.;
10:92:12 Structural, optical and electrical measurements on boron-doped CdO thin films
DOI:10.1007/s10853-011-5658-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:10 AU: Dakhel, A. A.;
10:92:13 Structural, electrical and optical properties of Cd1-xGdxO nanocomposite thin films
DOI:10.1016/j.jallcom.2010.05.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Dakhel, A. A.;
10:92:14 Development of transparent conducting copper and iron co-doped cadmium oxide films: Effect of annealing in hydrogen atmosphere
DOI:10.1016/j.mssp.2014.05.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Dakhel, A. A.;Bououdina, M.;
10:92:15 Creation of RT-FM in CdO nanocrystalline powder by codoping with Cu and Gd: Effect of annealing in hydrogen atmosphere
DOI:10.1016/j.jallcom.2014.02.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Bououdina, M.;Dakhel, A. A.;
10:92:16 Solvothermal Synthesis of In2-xCoxO3 (0.05 <= x <= 0.15) Dilute Magnetic Semiconductors: Optical, Magnetic, and Dielectric Properties
DOI:10.1111/jace.12361 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:6 AU: Khatoon, Sarvari;Coolahan, Kelsey;Lofland, Samuel E.;Ahmad, Tokeer;
10:92:17 Synthesis, magnetic and dielectric characterization of nanocrystalline solid solutions of In2-xNixO3 (x=0.05, 0.10 and 0.15)
DOI:10.1016/j.materresbull.2013.04.051 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Ahmad, Tokeer;Khatoon, Sarvari;Coolahan, Kelsey;
10:92:18 Room temperature ferromagnetism in Ni doped In2O3 nanoparticles
DOI:10.1016/j.tsf.2011.03.105 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Prakash, Ram;Kumar, Shalendra;Ahmed, Faheem;Lee, Chan Gyu;Il Song, Jung;
10:92:19 Manganese-doped indium oxide and its application in organic light-emitting diodes
DOI:10.1063/1.3610559 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Liao, Yaqin;Lu, Qipeng;Fan, Yi;Liu, Xingyuan;
10:92:20 Measurement of small concentrations of manganese in cadmium oxide (CdO) using electron magnetic resonance
DOI:10.1016/j.ceramint.2012.07.102 JN:CERAMICS INTERNATIONAL PY:2013
TC:4 AU: de Biasi, Ronaldo Sergio;Netto Grillo, Maria Lucia;
10:92:21 Synthesis, Structural and Magnetic Properties of Ni-Doped In2O3 Nanoparticles
DOI:10.1080/10584587.2011.574483 JN:INTEGRATED FERROELECTRICS PY:2011
TC:2 AU: Dussan, S.;Singh, M. K.;Kumar, A.;Katiyar, R. S.;
10:92:22 Ab-initio determination of X-ray structure factors and the Compton profiles of CdO
DOI:10.1016/j.jallcom.2010.04.060 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Dhaka, M. S.;Paliwal, U.;Sharma, G.;Mishra, M. C.;Joshi, K. B.;Kothari, R. K.;Sharma, B. K.;
10:92:23 Optoelectronic and magnetic properties of Mn-doped indium tin oxide: A first-principles study
DOI:10.1063/1.4757036 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Tripathi, Madhvendra Nath;Bahramy, Mohammad Saeed;Shida, Kazuhito;Sahara, Ryoji;Mizuseki, Hiroshi;Kawazoe, Yoshiyuki;
10:92:24 Influence of Yb-doping on optoelectrical properties of CdO nanocrystalline films
DOI:10.1007/s10853-010-4946-x JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:7 AU: Dakhel, A. A.;
10:92:25 Preparation of dendritic-like Ag crystals using monocrystalline silicon as template
DOI:10.1016/j.materresbull.2011.02.025 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:12 AU: Wei, Yanlin;Chen, Yashao;Ye, Linjing;Chang, Pengmei;
10:92:26 Growth and optical properties of uniform tungsten oxide nanowire bundles via a two-step heating process by thermal evaporation
DOI:10.1016/j.tsf.2010.08.162 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Hsieh, Yun-Tsung;Huang, Meng-Wen;Chang, Chen-Chuan;Chen, Uei-Shin;Shih, Han-C.;
10:92:27 Spin dynamics evidenced by EPR in Sn1-xMnxO2 nanoparticles annealed at different temperatures
DOI:10.1016/j.jallcom.2012.10.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Popa, A.;Toloman, D.;Raita, O.;Stan, M.;Vasile, B. S.;Leostean, C.;Giurgiu, L. M.;
10:92:28 Low-temperature synthesis, structural and magnetic properties of self-dopant LaMnO3+delta nanoparticles from a metal-organic polymeric precursor
DOI:10.1016/j.materresbull.2013.08.007 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:1 AU: Ahmad, Tokeer;Lone, Irfan H.;Ubaidullah, Mohd.;Coolhan, Kelsey;
10:93:1 Comparative study of ZnO nanorod array and nanoparticle film in photoelectric response and charge storage
DOI:10.1016/j.jallcom.2013.09.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:9 AU: Zhu, Qiang;Xie, Changsheng;Li, Huayao;Yang, Qicheng;
10:93:2 Oxygen Vacancy Induced Band-Gap Narrowing and Enhanced Visible Light Photocatalytic Activity of ZnO
DOI:10.1021/am300835p JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:132 AU: Wang, Junpeng;Wang, Zeyan;Huang, Baibiao;Ma, Yandong;Liu, Yuanyuan;Qin, Xiaoyan;Zhang, Xiaoyang;Dai, Ying;
10:93:3 Selectively enhanced UV and NIR photoluminescence from a degenerate ZnO nanorod array film
DOI:10.1039/c4tc00011k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:8 AU: Zhu, Qiang;Xie, Changsheng;Li, Huayao;Yang, Chaoqun;Zhang, Shunping;Zeng, Dawen;
10:93:4 Characterization of Incidental Photon-to-electron Conversion Efficiency (IPCE) of porous TiO2/SnO2 composite film
DOI:10.1016/j.jallcom.2013.03.126 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Li, Huayao;Xie, Changsheng;Liao, Yichuan;Liu, Yuan;Zou, Zhijun;Wu, Jun;
10:93:5 Near-infrared photoluminescence from ZnO
DOI:10.1063/1.3692584 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Wang, Mingsong;Zhou, Yajun;Zhang, Yiping;Kim, Eui Jung;Hahn, Sung Hong;Seong, Seung Gie;
10:93:6 Nanocrystalline ZnO films prepared by pulsed laser deposition and their abnormal optical properties
DOI:10.1016/j.apsusc.2013.07.018 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Xiao, S. S.;Zhao, L.;Liu, Y. H.;Lian, J. S.;
10:93:7 Disordered ZnO nanoparticles with extremely intense deep-level emission and enhanced photocatalytic activity
DOI:10.1016/j.apsusc.2014.06.103 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Bai, L. N.;Wang, S.;Sun, H. M.;Jiang, Q.;Lian, J. S.;
10:93:8 Photoconductivity and trap-related decay in porous TiO2/ZnO nanocomposites
DOI:10.1063/1.3662954 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Wu, Jun;Li, Huayao;Liu, Yuan;Xie, Changsheng;
10:93:9 Room temperature growth and properties of ZnO films by pulsed laser deposition
DOI:10.1016/j.apsusc.2010.08.057 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Ma, Xiangli;Zhang, Jun;Lu, Jianguo;Ye, Zhizhen;
10:93:10 Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
DOI:10.1063/1.3665713 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: To, C. K.;Yang, B.;Su, S. C.;Ling, C. C.;Beling, C. D.;Fung, S.;
10:93:11 Optical properties of anodically degraded ZnO
DOI:10.1063/1.4867178 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Messerschmidt, Daniel;Bratz, Kathrin;Gnehr, Wolf-Michael;Romanus, Henry;Eberhardt, Jens;Nicolay, Sylvain;Ballif, Christophe;
10:93:12 High efficiency NiO/ZnO heterojunction UV photodiode by sol-gel processing
DOI:10.1039/c3tc31444h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:8 AU: Park, Namseok;Sun, Ke;Sun, Zhelin;Jing, Yi;Wang, Deli;
10:93:13 Control of Optical Band Gap in La Doped Bismuth Titanate with Two Stage Doping
DOI:10.1080/15421406.2014.931786 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:1 AU: Han, Jun Young;Bark, Chung Wung;
10:93:14 Room temperature pulsed laser deposited ZnO thin films as photoluminiscence gas sensors
DOI:10.1016/j.apsusc.2012.07.128 JN:APPLIED SURFACE SCIENCE PY:2012
TC:15 AU: Padilla-Rueda, D.;Vadillo, J. M.;Laserna, J. J.;
10:93:15 Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition
DOI:10.1063/1.4890460 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Wang, Zilan;Su, Shichen;Ling, Francis Chi-Chung;Anwand, W.;Wagner, A.;
10:93:16 Oxygen Deficiency and Hydrogen Turn ZnO Red
DOI:10.1007/s11664-010-1115-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:9 AU: Weber, M. H.;Parmar, N. S.;Jones, K. A.;Lynn, K. G.;
10:93:17 Anodic degradation of ZnO on soda-lime glass
DOI:10.1016/j.solmat.2013.07.022 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:1 AU: Messerschmidt, Daniel;Hochmuth, Andreas;Raedlein, Edda;Romanus, Henry;Gnehr, Wolf-Michael;Eberhardt, Jens;Ballif, Christophe;
10:93:18 Characterization of microstructural defects in melt grown ZnO single crystals
DOI:10.1063/1.3559264 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Anwand, W.;Brauer, G.;Grynszpan, R. I.;Cowan, T. E.;Schulz, D.;Klimm, D.;Cizek, J.;Kuriplach, J.;Prochazka, I.;Ling, C. C.;Djurisic, A. B.;Klemm, V.;Schreiber, G.;Rafaja, D.;
10:93:19 Modelling of infrared optical constants for polycrystalline low pressure chemical vapour deposition ZnO:B films
DOI:10.1063/1.4795809 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Prunici, P.;Hamelmann, F. U.;Beyer, W.;Kurz, H.;Stiebig, H.;
10:93:20 Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition
DOI:10.1016/j.jallcom.2013.01.121 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Melikhova, O.;Cizek, J.;Lukac, F.;Vlcek, M.;Novotny, M.;Bulir, J.;Lancok, J.;Anwand, W.;Brauer, G.;Connolly, J.;McCarthy, E.;Krishnamurthy, S.;Mosnier, J. -P.;
10:93:21 Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping
DOI:10.1063/1.4742016 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Wang, Kun;Fang, Xiao-Yong;Li, Ya-Qin;Yin, Ai-Cha;Jin, Hai-Bo;Yuan, Jie;Cao, Mao-Sheng;
10:93:22 The investigation of an amorphous SiOx system for charge storage applications in nonvolatile memory at low temperature process
DOI:10.1016/j.mseb.2010.07.009 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Van Duy, Nguyen;Jung, Sungwook;Nga, Nguyen Thanh;Son, Dang Ngoc;Cho, Jaehyun;Lee, Sunhwa;Lee, Wonbaek;Yi, Junsin;
10:94:1 The correlation between magnetic and structural properties of nanocrystalline transition metal-doped ZnO particles prepared by the co-precipitation method
DOI:10.1016/j.jallcom.2012.08.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:24 AU: Saleh, Rosari;Djaja, Nadia Febiana;Prakoso, Suhendro Purbo;
10:94:2 The influence of Fe doping on the structural, magnetic and optical properties of nanocrystalline ZnO particles
DOI:10.1016/j.jmmm.2011.07.059 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:34 AU: Saleh, Rosari;Prakoso, Suhendro Purbo;Fishli, Adel;
10:94:3 Photocatalytic, optical and magnetic properties of Fe-doped ZnO nanoparticles prepared by chemical route
DOI:10.1016/j.jallcom.2013.11.127 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:9 AU: Kumar, Khanesh;Chitkara, Mansi;Sandhu, Inderjit Singh;Mehta, D.;Kumar, Sanjeev;
10:94:4 Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nanoparticles
DOI:10.1063/1.3294620 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:27 AU: Kataoka, T.;Kobayashi, M.;Sakamoto, Y.;Song, G. S.;Fujimori, A.;Chang, F. -H.;Lin, H. -J.;Huang, D. J.;Chen, C. T.;Ohkochi, T.;Takeda, Y.;Okane, T.;Saitoh, Y.;Yamagami, H.;Tanaka, A.;Mandal, S. K.;Nath, T. K.;Karmakar, D.;Dasgupta, I.;
10:94:5 Electronic structure and magnetic properties of (Fe,Co)-codoped ZnO: Theory and experiment
DOI:10.1103/PhysRevB.81.184421 JN:PHYSICAL REVIEW B PY:2010
TC:16 AU: Karmakar, Debjani;Rao, T. V. Chandrasekhar;Yakhmi, J. V.;Yaresko, A.;Antonov, V. N.;Kadam, R. M.;Mandal, S. K.;Adhikari, R.;Das, A. K.;Nath, T. K.;Ganguli, Nirmal;Dasgupta, I.;Das, G. P.;
10:94:6 Enhancement of dielectric constant in transition metal doped ZnO nanocrystals
DOI:10.1063/1.4894722 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Singh, Swati;Dey, P.;Roy, J. N.;Mandal, S. K.;
10:94:7 Synthesis and characterization of novel Fe@ZnO nanosystem
DOI:10.1016/j.jallcom.2013.05.015 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:12 AU: Dhiman, Pooja;Chand, Jagdish;Kumar, Amit;Kotnala, R. K.;Batoo, Khalid Mujasam;Singh, M.;
10:94:8 Magnetic properties of Fe doped, Co doped, and Fe plus Co co-doped ZnO
DOI:10.1063/1.4799778 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Beltran, J. J.;Osorio, J. A.;Barrero, C. A.;Hanna, C. B.;Punnoose, A.;
10:94:9 Effect of Fe doping concentration on optical and magnetic properties of ZnO nanorods
DOI:10.1088/0957-4484/23/11/115601 JN:NANOTECHNOLOGY PY:2012
TC:20 AU: Panigrahy, Bharati;Aslam, M.;Bahadur, D.;
10:94:10 Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction
DOI:10.1016/j.jmmm.2010.07.014 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:12 AU: Wang, Dong;Chen, Z. Q.;Wang, D. D.;Gong, J.;Cao, C. Y.;Tang, Z.;Huang, L. R.;
10:94:11 Cu-doping effect on structure and magnetic properties of Fe-doped ZnO powders
DOI:10.1016/j.matchemphys.2010.10.002 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:24 AU: Liu, Huilian;Yang, Jinghai;Hua, Zhong;Liu, Yang;Yang, Lili;Zhang, Yongjun;Cao, Jian;
10:94:12 Effect of Nd3+ incorporation on the microstructure and chemical structure of RF sputtered ZnO thin films
DOI:10.1016/j.mseb.2012.12.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:6 AU: Gottardi, Gloria;Pandiyan, Rajesh;Micheli, Victor;Pepponi, Giancarlo;Gennaro, Salvatore;Bartali, Ruben;Laidani, Nadhira;
10:94:13 Theoretical study of Fe-doped p-type ZnO
DOI:10.1063/1.3422486 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Deng, Bei;Guo, Zhiyou;Sun, Huiqing;
10:94:14 AC and DC electrical transport studies of (Fe, Co) codoped ZnO nanoparticles
DOI:10.1116/1.4887480 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Mandal, Sanjay Kumar;Dey, Puja;Nath, Tapan Kumar;
10:94:15 Effect of neodymium doping on structure, electrical and optical properties of nanocrystalline ZnO
DOI:10.1016/j.matchar.2012.04.015 JN:MATERIALS CHARACTERIZATION PY:2012
TC:15 AU: Roy, B.;Chakrabarty, S.;Mondal, O.;Pal, M.;Dutta, A.;
10:94:16 Conductivity modification of ZnO film by low energy Fe10+ ion implantation
DOI:10.1016/j.apsusc.2011.09.015 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Kumar, Ashutosh;Krishna, J. B. M.;Das, Dipankar;Keshri, Sunita;
10:94:17 The magnetic properties of FexZn1-xO synthesized via the solid-state reaction route: Experiment and theory
DOI:10.1016/j.jmmm.2013.03.026 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:10 AU: Wang, Feng;Huang, Wei-Wei;Li, Shan-Yu;Lian, A-Qiang;Zhang, Xiao-Ting;Cao, Wei;
10:94:18 Effects of O-2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation
DOI:10.1016/j.jallcom.2010.02.097 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Yun, Eui-Jung;Jung, Jin Woo;Lee, Byung Cheol;
10:94:19 Correlation between electronic structure and magnetic properties of Fe-doped ZnO films
DOI:10.1063/1.4730605 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Chen, Tiexin;Cao, Liang;Zhang, Wenhua;Zhang, Wang;Han, Yuyan;Zheng, Zhiyuan;Xu, Faqiang;Kurash, Ibrahim;Qian, Haijie;Wang, Jia'ou;
10:94:20 Fe doped ZnO thin film for mediator-less biosensing application
DOI:10.1063/1.4714670 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Saha, Shibu;Tomar, Monika;Gupta, Vinay;
10:94:21 Role of surface functionalization in ZnO:Fe nanostructures
DOI:10.1016/j.mseb.2013.12.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Lokesh, R. N.;Balakrishnan, L.;Jeganathan, K.;Layek, Samar;Verma, H. C.;Gopalakrishnan, N.;
10:94:22 Ab initio study of magnetic properties of complexes formed by an Fe impurity and an intrinsic interstitial defect in ZnO
DOI:10.1103/PhysRevB.84.024415 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Debernardi, A.;Fanciulli, M.;
10:94:23 Neutron diffraction study and ab-initio calculations of nanostructured doped ZnO
DOI:10.1016/j.jallcom.2012.04.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Bououdina, M.;Mamouni, N.;Lemine, O. M.;Al-Saie, A.;Jaafar, A.;Ouladdiaf, B.;El Kenz, A.;Benyoussef, A.;Hlil, E. K.;
10:94:24 Electrical, optical, and analytical characterization of bulk hydrothermal ZnO crystals doped with indium
DOI:10.1016/j.jcrysgro.2011.01.065 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Wang, Buguo;Callahan, Michael J.;Bouthillette, Lionel O.;Bliss, David F.;Look, David C.;
10:94:25 Effect of annealing on the structure and magnetic property of Zn0.9Fe0.1S nanoparticles
DOI:10.1016/j.matlet.2011.04.103 JN:MATERIALS LETTERS PY:2011
TC:3 AU: Li, Yanan;Cao, Chuanbao;Chen, Zhuo;
10:95:1 Defect-Related Emissions and Magnetization Properties of ZnO Nanorods
DOI:10.1002/adfm.200902018 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:105 AU: Panigrahy, Bharati;Aslam, Mohammed;Misra, Devi Shanker;Ghosh, Manoranjan;Bahadur, Dhirendra;
10:95:2 Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and physical properties
DOI:10.1063/1.3491037 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:32 AU: Mal, Siddhartha;Nori, Sudhakar;Jin, Chunming;Narayan, J.;Nellutla, S.;Smirnov, A. I.;Prater, J. T.;
10:95:3 Photoluminescence studies on structural defects and room temperature ferromagnetism in Ni and Ni-H doped ZnO nanoparticles
DOI:10.1063/1.3460644 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Tong, Liu-Niu;Cheng, Teng;Han, Huai-Bin;Hu, Jin-Lian;He, Xian-Mei;Tong, Yan;Schneider, Claus M.;
10:95:4 Influence of thermal treatment on tuning the ferromagnetism in Mn-doped ZnO film
DOI:10.1016/j.jallcom.2013.12.127 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Gao, Q. Q.;Yu, Q. X.;Chen, B.;Zhu, H.;
10:95:5 A threshold of Vo(+)/Vo(++) to room temperature ferromagnetism of hydrogenated Mn doped ZnO nanoparticles
DOI:10.1016/j.apsusc.2011.08.080 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Yuan, K.;Yu, Q. X.;Gao, Q. Q.;Wang, J.;Zhang, X. T.;
10:95:6 Influence of annealing atmosphere on room temperature ferromagnetism of Mn-doped ZnO nanoparticles
DOI:10.1016/j.apsusc.2012.08.108 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Gao, Q. Q.;Yu, Q. X.;Yuan, K.;Fu, X. N.;Chen, B.;Zhu, C. X.;Zhu, H.;
10:95:7 Defect induced high photocurrent in solution grown vertically aligned ZnO nanowire array films
DOI:10.1063/1.4749808 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Kushwaha, Ajay;Aslam, M.;
10:95:8 Role of defect states in magnetic and electrical properties of ZnO nanowires
DOI:10.1063/1.4801937 JN:AIP ADVANCES PY:2013
TC:8 AU: Kushwaha, Ajay;Tyagi, Himanshu;Aslam, M.;
10:95:9 Ion-irradiation-induced ferromagnetism in undoped ZnO thin films
DOI:10.1016/j.actamat.2012.09.071 JN:ACTA MATERIALIA PY:2013
TC:9 AU: Mal, Siddhartha;Nori, Sudhakar;Narayan, J.;Prater, J. T.;Avasthi, D. K.;
10:95:10 Triple perovskite Sr3CrFeMoO9 ultrathin films with ferromagnetism above room temperature
DOI:10.1016/j.scriptamat.2013.07.004 JN:SCRIPTA MATERIALIA PY:2013
TC:1 AU: Li, Zheng;Jiao, Long;Ji, Wei-Jing;Xu, Jie;Wang, Jin-Feng;Gu, Zheng-Bin;Zhou, Jian;Yao, Shu-Hua;Chen, Y. B.;Zhang, Shan-Tao;Chen, Yan-Feng;
10:95:11 Synthesis of blue emitting ZnO nanorods exhibiting room temperature ferromagnetism
DOI:10.1016/j.matchemphys.2013.01.013 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: Jana, Arpita;Devi, Parukuttyamma Sujatha;Mitra, Amitava;Bandyopadhyay, Nil Ratan;
10:95:12 Absence of ferromagnetism in single-phase wurtzite Zn1-xMnxO polycrystalline thin films
DOI:10.1063/1.3486017 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Gilliland, S.;Segura, A.;Sanchez-Royo, J. F.;Garcia, L. M.;Bartolome, F.;Sans, J. A.;Martinez-Criado, G.;Jimenez-Villacorta, F.;
10:95:13 Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films
DOI:10.1063/1.4768721 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Mal, Siddhartha;Nori, Sudhakar;Mula, Suhrit;Narayan, J.;Prater, J. T.;
10:95:14 d(0) Ferromagnetism in undoped ZnO thin films: Effect of thickness, interface and oxygen annealing
DOI:10.1016/j.scriptamat.2011.09.016 JN:SCRIPTA MATERIALIA PY:2011
TC:5 AU: Mal, Siddhartha;Yang, Tsung-Han;Jin, Chunming;Nori, Sudhakar;Narayan, J.;Prater, J. T.;
10:95:15 Manganese diffusion in annealed magnetic tunnel junctions with MgO tunnel barriers
DOI:10.1016/j.scriptamat.2010.12.021 JN:SCRIPTA MATERIALIA PY:2011
TC:5 AU: Larson, D. J.;Marquis, E. A.;Rice, P. M.;Prosa, T. J.;Geiser, B. P.;Yang, S. -H.;Parkin, S. S. P.;
10:95:16 Structural peculiarities and point defects of bulk-ZnO single crystals
DOI:10.1016/j.jallcom.2014.07.027 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Kaurova, I. A.;Kuz'micheva, G. M.;Rybakov, V. B.;Cousson, A.;Gayvoronsky, V. Ya.;
10:95:17 Tuning of crystal quality and optical properties of hydrothermally synthesized ZnO nanorods by magnetic field
DOI:10.1016/j.matchemphys.2014.09.028 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:2 AU: Chiang, Y. F.;Kuo, S. M.;Liu, C. P.;Huang, J. C. A.;Yao, W. T.;Wu, Y. C.;
10:96:1 Thin-film transistors based on p-type Cu2O thin films produced at room temperature
DOI:10.1063/1.3428434 JN:APPLIED PHYSICS LETTERS PY:2010
TC:43 AU: Fortunato, Elvira;Figueiredo, Vitor;Barquinha, Pedro;Elamurugu, Elangovan;Barros, Raquel;Goncalves, Goncalo;Park, Sang-Hee Ko;Hwang, Chi-Sun;Martins, Rodrigo;
10:96:2 Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates
DOI:10.1063/1.4739524 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Yao, Z. Q.;Liu, S. L.;Zhang, L.;He, B.;Kumar, A.;Jiang, X.;Zhang, W. J.;Shao, G.;
10:96:3 Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature
DOI:10.1063/1.3521310 JN:APPLIED PHYSICS LETTERS PY:2010
TC:28 AU: Sung, Sang-Yun;Kim, Se-Yun;Jo, Kwang-Min;Lee, Joon-Hyung;Kim, Jeong-Joo;Kim, Sang-Gon;Chai, Kyoung-Hoon;Pearton, S. J.;Norton, D. P.;Heo, Young-Woo;
10:96:4 p-channel thin-film transistors based on spray-coated Cu2O films
DOI:10.1063/1.4803085 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Pattanasattayavong, Pichaya;Thomas, Stuart;Adamopoulos, George;McLachlan, Martyn A.;Anthopoulos, Thomas D.;
10:96:5 Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying
DOI:10.1063/1.3683499 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Yao, Z. Q.;He, B.;Zhang, L.;Zhuang, C. Q.;Ng, T. W.;Liu, S. L.;Vogel, M.;Kumar, A.;Zhang, W. J.;Lee, C. S.;Lee, S. T.;Jiang, X.;
10:96:6 p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide
DOI:10.1021/am302251s JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:15 AU: Kim, Sang Yun;Ahn, Cheol Hyoun;Lee, Ju Ho;Kwon, Yong Hun;Hwang, Sooyeon;Lee, Jeong Yong;Cho, Hyung Koun;
10:96:7 Solution-processed oxide semiconductor SnO in p-channel thin-film transistors
DOI:10.1039/c2jm16426d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:20 AU: Okamura, Koshi;Nasr, Babak;Brand, Richard A.;Hahn, Horst;
10:96:8 Copper(I) oxide based thermoelectric powders and pastes with high Seebeck coefficients
DOI:10.1063/1.4903832 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Andrei, Virgil;Bethke, Kevin;Rademann, Klaus;
10:96:9 Room temperature deposited transparent p-channel CuO thin film transistors
DOI:10.1016/j.apsusc.2014.01.109 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Sanal, K. C.;Vikas, L. S.;Jayaraj, M. K.;
10:96:10 Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates
DOI:10.1063/1.3656974 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Dindar, A.;Kim, J. B.;Fuentes-Hernandez, C.;Kippelen, B.;
10:96:11 Potential distribution in channel of thin-film transistors
DOI:10.1063/1.4733290 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Okamura, Koshi;Hahn, Horst;
10:96:12 Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors
DOI:10.1063/1.4794061 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Jeong, Chan-Yong;Sohn, Joonsung;Song, Sang-Hun;Cho, In-Tak;Lee, Jong-Ho;Cho, Eou-Sik;Kwon, Hyuck-In;
10:96:13 Non-equilibrium deposition of phase pure Cu2O thin films at reduced growth temperature
DOI:10.1063/1.4865457 JN:APL MATERIALS PY:2014
TC:12 AU: Subramaniyan, Archana;Perkins, John D.;O'Hayre, Ryan P.;Lany, Stephan;Stevanovic, Vladan;Ginley, David S.;Zakutayev, Andriy;
10:96:14 Polymer stabilized ZnO nanoparticles for low-temperature and solution-processed field-effect transistors
DOI:10.1039/c0jm00185f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:13 AU: Okamura, Koshi;Nikolova, Donna;Mechau, Norman;Hahn, Horst;
10:96:15 Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability
DOI:10.1063/1.3684635 JN:AIP ADVANCES PY:2012
TC:0 AU: Kim, J. B.;Fuentes-Hernandez, C.;Hwang, D. K.;Potscavage, W. J., Jr.;Kippelen, B.;
10:96:16 Carrier transport in nanocrystalline field-effect transistors: Impact of interface roughness and geometrical carrier trap
DOI:10.1063/1.3495798 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Okamura, Koshi;Hahn, Horst;
10:96:17 Enhancement of photocathodic stability of p-type copper(I) oxide electrodes by surface etching treatment
DOI:10.1016/j.tsf.2013.10.122 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Amano, Fumiaki;Ebina, Toshihiro;Ohtani, Bunsho;
10:96:18 Thin-film transistors based on p-type Cu2O thin films produced at room temperature (vol 96, 192102, 2010)
DOI:10.1063/1.3449139 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Fortunato, Elvira;Figueiredo, Vitor;Barquinha, Pedro;Elamurugu, Elangovan;Barros, Raquel;Goncalves, Goncalo;Park, Sang-Hee Ko;Hwang, Chi-Sun;Martins, Rodrigo;
10:96:19 Metal-semiconductor hybrid thin films in field-effect transistors
DOI:10.1063/1.4851895 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Okamura, Koshi;Dehm, Simone;Hahn, Horst;
10:96:20 First-principles study of Be doped CuAlS2 for p-type transparent conductive materials
DOI:10.1063/1.3574662 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Huang, Dan;Zhao, Yu-Jun;Tian, Ren-Yu;Chen, Di-Hu;Nie, Jian-Jun;Cai, Xin-Hua;Yao, Chun-Mei;
10:97:1 Sol-gel-deposited ZnO thin films: A review
DOI:10.1016/j.mseb.2010.07.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:107 AU: Znaidi, Lamia;
10:97:2 The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films
DOI:10.1016/j.jallcom.2009.10.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:46 AU: Benouis, C. E.;Benhaliliba, M.;Sanchez Juarez, A.;Aida, M. S.;Chami, F.;Yakuphanoglu, F.;
10:97:3 In doped ZnO thin films
DOI:10.1016/j.jallcom.2011.04.058 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:36 AU: Hafdallah, A.;Yanineb, F.;Aida, M. S.;Attaf, N.;
10:97:4 Effect of Solution Spray Rate on the Properties of Chemically Sprayed ZnO:In Thin Films
DOI:10.1155/2013/423632 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Kriisa, Merike;Krunks, Malle;Kaerber, Erki;Kukk, Mart;Mikli, Valdek;Mere, Arvo;
10:97:5 On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition
DOI:10.1116/1.4842695 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Abrutis, Adulfas;Silimavicus, Laimis;Kubilius, Virgaudas;Murauskas, Tomas;Saltyte, Zita;Kuprenaite, Sabina;Plausinaitiene, Valentina;
10:97:6 Influence of In doping on the structural, optical and acetone sensing properties of ZnO nanoparticulate thin films
DOI:10.1016/j.mssp.2012.04.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:9 AU: Prajapati, C. S.;Sahay, P. P.;
10:97:7 Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis
DOI:10.1016/j.tsf.2011.04.152 JN:THIN SOLID FILMS PY:2011
TC:18 AU: Jiao, B. C.;Zhang, X. D.;Wei, C. C.;Sun, J.;Huang, Q.;Zhao, Y.;
10:97:8 Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis
DOI:10.1016/j.tsf.2014.09.030 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Jongthammanurak, Samerkhae;Cheawkul, Tinnaphob;Witana, Maetapa;
10:97:9 Highly c-axis oriented ZnO thin film using 1-propanol as solvent in sol-gel synthesis
DOI:10.1016/j.matlet.2012.10.099 JN:MATERIALS LETTERS PY:2013
TC:15 AU: Popa, M.;Mereu, R. A.;Filip, M.;Gabor, M.;Petrisor, T., Jr.;Ciontea, L.;Petrisor, T.;
10:97:10 Indium doped zinc oxide thin films deposited by ultrasonic spray pyrolysis technique: Effect of the substrate temperature on the physical properties
DOI:10.1016/j.mssp.2011.01.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:11 AU: Castaneda, L.;Maldonado, A.;Escobedo-Morales, A.;Avendano-Alejo, M.;Gomez, H.;Vega-Perez, J.;Olvera, M. de la L.;
10:97:11 Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors
DOI:10.1016/j.tsf.2013.10.182 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Choi, Mu Hee;Ma, Tae Young;
10:97:12 Optical and electrical properties of Mg-doped zinc tin oxide films prepared by radio frequency magnetron sputtering
DOI:10.1016/j.apsusc.2013.09.035 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Ma, Tae Young;Choi, Mu Hee;
10:97:13 Sol-gel derived ZnO thin films: Effect of amino-additives
DOI:10.1016/j.apsusc.2013.08.118 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Vajargah, P. Hosseini;Abdizadeh, H.;Ebrahimifard, R.;Golobostanfard, M. R.;
10:97:14 The effects of carrier gas and substrate temperature on ZnO films prepared by ultrasonic spray pyrolysis
DOI:10.1016/j.mssp.2012.11.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Jongthammanurak, Samerkhae;Witana, Maetapa;Cheawkul, Tinnaphob;Thanachayanont, Chanchana;
10:97:15 Structural, electrical and optical properties of indium chloride doped ZnO films synthesized by Ultrasonic Spray Pyrolysis technique
DOI:10.1016/j.tsf.2012.09.050 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Zaleta-Alejandre, E.;Camargo-Martinez, J.;Ramirez-Garibo, A.;Perez-Arrieta, M. L.;Balderas-Xicohtencatl, R.;Rivera-Alvarez, Z.;Aguilar-Frutis, M.;Falcony, C.;
10:97:16 Doping induced structural and compositional changes in ZnO spray pyrolysed films and the effects on optical and electrical properties
DOI:10.1016/j.tsf.2011.02.018 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Gledhill, Sophie;Grimm, Alexander;Greiner, Dieter;Bohne, Wolfgang;Lux-Steiner, Martha;Fischer, Christian-Herbert;
10:97:17 The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties
DOI:10.1007/s11051-014-2309-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Ghafouri, Vahid;Shariati, Mohsen;Ebrahimzad, Akbar;
10:97:18 Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires
DOI:10.1016/j.tsf.2013.09.001 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Lim, Sin Yee;Brahma, Sanjaya;Liu, Chuan-Pu;Wang, Ruey-Chi;Huang, Jow-Lay;
10:97:19 Refractive index and optical dispersion of In2O3, InBO3 and gahnite
DOI:10.1016/j.materresbull.2013.02.057 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Medenbach, O.;Siritanon, Theeranun;Subramanian, M. A.;Shannon, R. D.;Fischer, R. X.;Rossman, George R.;
10:97:20 Study on physical properties of indium-doped zinc oxide deposited by spray pyrolysis technique
DOI:10.1016/j.tsf.2011.04.200 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Rozati, S. M.;Zarenejad, F.;Memarian, N.;
10:97:21 Pulsed laser deposited ZnO:In as transparent conducting oxide
DOI:10.1016/j.tsf.2011.01.354 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Chirakkara, Saraswathi;Nanda, K. K.;Krupanidhi, S. B.;
10:97:22 MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air
DOI:10.1016/j.jcrysgro.2012.03.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:0 AU: Pflitsch, Christian;Nebatti, Abdelkader;Brors, Georg;Atakan, Burak;
10:97:23 Optical constants and crystal chemical parameters of Sc2W3O12
DOI:10.1016/j.materresbull.2011.11.037 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Shannon, Robert D.;Medenbach, Olaf;Mizoguchi, Hiroshi;Subramanian, M. A.;Fischer, Reinhard X.;
10:97:24 Sixth international conference on hot-wire CVD (Cat-CVD) process Preface
DOI:10.1016/j.tsf.2011.01.002 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Bouree, Jean-Eric;Mahan, A. Harv;
10:98:1 Shape Matters: Anisotropy of the Morphology of Inorganic Colloidal Particles - Synthesis and Function
DOI:10.1002/adfm.201101205 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:39 AU: Polarz, Sebastian;
10:98:2 Hierarchical Zinc Oxide Materials with Multiple Porosity Prepared by Ultrafast Temperature Gradient Chemical Gas-Phase Synthesis
DOI:10.1002/adma.201103557 JN:ADVANCED MATERIALS PY:2012
TC:20 AU: Dilger, Stefan;Lizandara-Pueyo, Carlos;Krumm, Michael;Polarz, Sebastian;
10:98:3 Shape Anisotropy Influencing Functional Properties: Trigonal Prismatic ZnO Nanoparticles as an Example
DOI:10.1002/adfm.201000997 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:28 AU: Lizandara-Pueyo, Carlos;Siroky, Stephan;Wagner, Markus R.;Hoffmann, Axel;Reparaz, Juan S.;Lehmann, Michael;Polarz, Sebastian;
10:98:4 Molecular Precursor Route to a Metastable Form of Zinc Oxide
DOI:10.1021/cm101240n JN:CHEMISTRY OF MATERIALS PY:2010
TC:22 AU: Pueyo, Carlos Lizandara;Siroky, Stephan;Landsmann, Steve;van den Berg, Maurits W. E.;Wagner, Markus R.;Reparaz, Juan S.;Hoffmann, Axel;Polarz, Sebastian;
10:98:5 Formation and Assembly-Disassembly Processes of ZnO Hexagonal Pyramids Driven by Dipolar and Excluded Volume Interactions
DOI:10.1021/ja906868h JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:39 AU: Yang, Ming;Sun, Kai;Kotov, Nicholas A.;
10:98:6 Stability of the Bulk Phase of Layered ZnO
DOI:10.1103/PhysRevLett.107.085508 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:13 AU: Rakshit, Bipul;Mahadevan, Priya;
10:98:7 Absence of rippling in graphene under biaxial tensile strain
DOI:10.1103/PhysRevB.82.153407 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Rakshit, Bipul;Mahadevan, Priya;
10:98:8 Temperature-Stable and Optically Transparent Thin-Film Zinc Oxide Aerogel Electrodes As Model Systems for 3D Interpenetrating Organic-Inorganic Heterojunction Solar Cells
DOI:10.1021/am302458n JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:5 AU: Krumm, Michael;Pawlitzek, Fabian;Weickert, Jonas;Schmidt-Mende, Lukas;Polarz, Sebastian;
10:98:9 Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution with Sulfur Leading to Materials with Advanced Properties for Optical Applications Like Full Inorganic UV Protection
DOI:10.1021/cm300239q JN:CHEMISTRY OF MATERIALS PY:2012
TC:13 AU: Lehr, Daniela;Luka, Martin;Wagner, Markus R.;Buelger, Max;Hoffmann, Axel;Polarz, Sebastian;
10:98:10 Role of cross section on the stability and electronic structure of Ag-doped ZnO nanowires
DOI:10.1007/s11051-012-0739-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Li, Yanlu;Zhao, Xian;Fan, Weiliu;Sun, Honggang;Cheng, Xiufeng;
10:98:11 Room-Temperature Ferromagnetism in Antiferromagnetic Cobalt Oxide Nanooctahedra
DOI:10.1021/nl4038533 JN:NANO LETTERS PY:2014
TC:9 AU: Fontaina-Troitino, Nerio;Liebana-Vinas, Sara;Rodriguez-Gonzalez, Benito;Li, Zi-An;Spasova, Marina;Farle, Michael;Salgueirino, Veronica;
10:98:12 Indirect to direct bandgap transition under uniaxial strain in layered ZnO
DOI:10.1063/1.4801314 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Rakshit, Bipul;Mahadevan, Priya;
10:98:13 Monolithic Zinc Oxide Aerogels from Organometallic Sol-Gel Precursors
DOI:10.1021/cm1006907 JN:CHEMISTRY OF MATERIALS PY:2010
TC:22 AU: Krumm, Michael;Pueyo, Carlos Lizandara;Polarz, Sebastian;
10:98:14 Electronic Structure of Nano-Sized ZnO: A Compton Profile Study
DOI:10.1007/s13391-012-2105-z JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Kumar, R.;Mishra, M. C.;Sharma, B. K.;Vyas, V.;Sharma, G.;
10:98:15 Comment on "Stability of the Bulk Phase of Layered ZnO"
DOI:10.1103/PhysRevLett.108.259601 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:5 AU: Kim, Bog G.;
10:98:16 Comment on "Stability of the Bulk Phase of Layered ZnO" Reply
DOI:10.1103/PhysRevLett.108.259602 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:1 AU: Rakshit, Bipul;Mahadevan, Priya;
10:98:17 The growth process of hierarchical porous hydroxyapatite microspheres precipitated by propionamide and citrate through hydrothermal synthesis
DOI:10.1016/j.matlet.2014.05.193 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Hao, Lijing;Yang, Hui;Du, Shaolong;Zhao, Naru;Wang, Yingjun;
10:98:18 The growth process of regular radiated nanorod bundles hydroxyapatite formed by thermal aqueous solution approach
DOI:10.1016/j.matchemphys.2013.05.048 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Yang, Hui;Hao, Lijing;Zhao, Naru;Huang, Miaojun;Du, Chang;Wang, Yingjun;
10:98:19 Three-Dimensional Spin Mapping of Antiferromagnetic Nanopyramids Having Spatially Alternating Surface Anisotropy at Room Temperature
DOI:10.1021/nl204192n JN:NANO LETTERS PY:2012
TC:2 AU: Wang, Kangkang;Smith, Arthur R.;
10:98:20 Organic Luminescent Molecule/ZnO Nanocomposite Film with Colors Tuning
DOI:10.1080/10584587.2013.789380 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Lv, Xiaojing;Hu, Bin;Ouyang, Mi;Fu, Zhiyan;Sun, Jingwei;Zhang, Cheng;
10:99:1 Size-Dependent Bacterial Growth Inhibition and Mechanism of Antibacterial Activity of Zinc Oxide Nanoparticles
DOI:10.1021/la104825u JN:LANGMUIR PY:2011
TC:191 AU: Raghupathi, Krishna R.;Koodali, Ranjit T.;Manna, Adhar C.;
10:99:2 Antibacterial activity of ZnO nanoparticles with a modified surface under ambient illumination
DOI:10.1088/0957-4484/23/47/475703 JN:NANOTECHNOLOGY PY:2012
TC:24 AU: Leung, Y. H.;Chan, C. M. N.;Ng, A. M. C.;Chan, H. T.;Chiang, M. W. L.;Djurisic, A. B.;Ng, Y. H.;Jim, W. Y.;Guo, M. Y.;Leung, F. C. C.;Chan, W. K.;Au, D. T. W.;
10:99:3 Silver-Coated Engineered Magnetic Nanoparticles Are Promising for the Success in the Fight against Antibacterial Resistance Threat
DOI:10.1021/nn300042m JN:ACS NANO PY:2012
TC:63 AU: Mahmoudi, Morteza;Serpooshan, Vahid;
10:99:4 Hollow Fiber Membrane Decorated with Ag/MWNTs: Toward Effective Water Disinfection and Biofouling Control
DOI:10.1021/nn2038725 JN:ACS NANO PY:2011
TC:43 AU: Gunawan, Poernomo;Guan, Cong;Song, Xianghua;Zhang, Quanyuan;Leong, Susanna Su Jan;Tang, Chuyang;Chen, Yuan;Chan-Park, Mary B.;Chang, Matthew Wook;Wang, Kean;Xu, Rong;
10:99:5 The molecular mechanism of action of bactericidal gold nanoparticles on Escherichia coli
DOI:10.1016/j.biomaterials.2011.11.057 JN:BIOMATERIALS PY:2012
TC:52 AU: Cui, Yan;Zhao, Yuyun;Tian, Yue;Zhang, Wei;Lu, Xiaoying;Jiang, Xingyu;
10:99:6 Eradicating Antibiotic-Resistant Biofilms with Silver-Conjugated Superparamagnetic Iron Oxide Nanoparticles
DOI:10.1002/adhm.201200215 JN:ADVANCED HEALTHCARE MATERIALS PY:2013
TC:11 AU: Durmus, Naside Gozde;Webster, Thomas J.;
10:99:7 Enhanced Efficacy of Superparamagnetic Iron Oxide Nanoparticles Against Antibiotic-Resistant Biofilms in the Presence of Metabolites
DOI:10.1002/adma.201302627 JN:ADVANCED MATERIALS PY:2013
TC:8 AU: Durmus, Naside Gozde;Taylor, Erik N.;Kummer, Kim M.;Webster, Thomas J.;
10:99:8 Antimicrobial Mechanism Based on H2O2 Generation at Oxygen Vacancies in ZnO Crystals
DOI:10.1021/la400378t JN:LANGMUIR PY:2013
TC:17 AU: Xu, Xiaoling;Chen, Dan;Yi, Zhigang;Jiang, Man;Wang, Li;Zhou, Zuowan;Fan, Ximei;Wang, Yong;Hui, David;
10:99:9 ZnO Nanoparticles: Synthesis, Characterization, and Ecotoxicological Studies
DOI:10.1021/la100293s JN:LANGMUIR PY:2010
TC:48 AU: Brayner, Roberta;Dahoumane, Si Amar;Yepremian, Claude;Djediat, Chakib;Meyer, Michael;Coute, Alain;Fievet, Fernand;
10:99:10 An Assessment of Fluorescence- and Absorbance-Based Assays to Study Metal-Oxide Nanoparticle ROS Production and Effects on Bacterial Membranes
DOI:10.1002/smll.201201455 JN:SMALL PY:2013
TC:13 AU: Horst, Allison M.;Vukanti, Raja;Priester, John H.;Holden, Patricia A.;
10:99:11 Antifungal activity of ZnO nanoparticles-the role of ROS mediated cell injury
DOI:10.1088/0957-4484/22/10/105101 JN:NANOTECHNOLOGY PY:2011
TC:51 AU: Lipovsky, Anat;Nitzan, Yeshayahu;Gedanken, Aharon;Lubart, Rachel;
10:99:12 Preliminary investigations on the antibacterial activity of zinc oxide nanostructures
DOI:10.1007/s11051-013-1557-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Ramani, Meghana;Ponnusamy, S.;Muthamizhchelvan, C.;
10:99:13 Unnatural amino acid-mediated synthesis of silver nanoparticles and their antifungal activity against Candida species
DOI:10.1007/s11051-014-2523-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Narayanan, Kannan Badri;Park, Hyun Ho;
10:99:14 Antibacterial activity of ZnO nanoparticles under ambient illumination - The effect of nanoparticle properties
DOI:10.1016/j.tsf.2013.05.167 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Ng, Y. H.;Leung, Y. H.;Liu, F. Z.;Ng, A. M. C.;Gao, M. H.;Chan, C. M. N.;Djurisic, A. B.;Leung, F. C. C.;Chan, W. K.;
10:99:15 Interaction between Oxide Nanoparticles and Biomolecules of the Bacterial Cell Envelope As Examined by Infrared Spectroscopy
DOI:10.1021/la103738e JN:LANGMUIR PY:2010
TC:25 AU: Jiang, Wei;Yang, Kun;Vachet, Richard W.;Xing, Baoshan;
10:99:16 Fibrinogen adsorption on zinc oxide nanoparticles: A Micro-Differential Scanning Calorimetry analysis
DOI:10.1016/j.jcis.2013.01.007 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:3 AU: Lousinian, S.;Missopolinou, D.;Panayiotou, C.;
10:99:17 Actinobacteria mediated synthesis of gold nanoparticles using Streptomyces sp VITDDK3 and its antifungal activity
DOI:10.1016/j.matlet.2012.11.125 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Gopal, Jannu Vinay;Thenmozhi, Mohankumar;Kannabiran, Krishnan;Rajakumar, Govindasamy;Velayutham, Kanayairam;Rahuman, Abdul Abdul;
10:100:1 High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires
DOI:10.1021/nl201850k JN:NANO LETTERS PY:2011
TC:37 AU: Gargas, Daniel J.;Gao, Hanwei;Wang, Hungta;Yang, Peidong;
10:100:2 Ultrafast screening and carrier dynamics in ZnO: Theory and experiment
DOI:10.1103/PhysRevB.84.035207 JN:PHYSICAL REVIEW B PY:2011
TC:15 AU: Versteegh, Marijn A. M.;Kuis, Tim;Stoof, H. T. C.;Dijkhuis, Jaap I.;
10:100:3 Room-Temperature Laser Emission of ZnO Nanowires Explained by Many-Body Theory
DOI:10.1103/PhysRevLett.108.157402 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:25 AU: Versteegh, Marijn A. M.;Vanmaekelbergh, Daniel;Dijkhuis, Jaap I.;
10:100:4 Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?
DOI:10.1103/PhysRevLett.107.236405 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:17 AU: Schleife, Andre;Roedl, Claudia;Fuchs, Frank;Hannewald, Karsten;Bechstedt, Friedhelm;
10:100:5 Intensive two-photon absorption induced decay pathway in a ZnO crystal: Impact of light-induced defect state
DOI:10.1063/1.4855375 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Li, Zhong-guo;Yang, Jun-yi;Wei, Tai-Huei;Song, Ying-lin;
10:100:6 Ultrafast Exciton Formation at the ZnO(10(1)over-bar0) Surface
DOI:10.1103/PhysRevLett.113.057602 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Deinert, J. -C.;Wegkamp, D.;Meyer, M.;Richter, C.;Wolf, M.;Staehler, J.;
10:100:7 Observation of preformed electron-hole Cooper pairs in highly excited ZnO
DOI:10.1103/PhysRevB.85.195206 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Versteegh, Marijn A. M.;van Lange, A. J.;Stoof, H. T. C.;Dijkhuis, Jaap I.;
10:100:8 Radiative efficiency of inelastic exciton-exciton scattering in ZnO nanocrystalline films
DOI:10.1364/OME.4.001023 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Chia, Chin-Hau;Yen, Ming-Hsiu;
10:100:9 The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities
DOI:10.1063/1.4829745 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Simmons, Jay G., Jr.;Foreman, John V.;Liu, Jie;Everitt, Henry O.;
10:100:10 Ultrafast all-optical gated amplifier based on ZnO nanowire lasing
DOI:10.1063/1.4733972 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Versteegh, Marijn A. M.;van Capel, Peter J. S.;Dijkhuis, Jaap I.;
10:100:11 Effects of reabsorption and spatial trap distributions on the radiative quantum efficiencies of ZnO
DOI:10.1103/PhysRevB.81.115318 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Foreman, J. V.;Everitt, H. O.;Yang, J.;McNicholas, T.;Liu, J.;
10:100:12 Optical nonlinearities and carrier dynamics in Fe doped GaN single crystal
DOI:10.1063/1.4900425 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Fang, Yu;Yang, Junyi;Li, Zhongguo;Yang, Yong;Wu, Xingzhi;Song, Yinglin;Zhou, Feng;
10:100:13 Thermally activated below-band-gap excitation behind green photoluminescence in ZnO
DOI:10.1063/1.4712624 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Kodama, Kanako;Uchino, Takashi;
10:100:14 Electron-hole plasma lasing in a ZnO random laser
DOI:10.1103/PhysRevB.86.205103 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Nakamura, Toshihiro;Firdaus, Kurniawan;Adachi, Sadao;
10:100:15 Ultrafast exciton dynamics in ZnO: Excitonic versus electron-hole plasma lasing
DOI:10.1063/1.3549614 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Shih, T.;Mazur, E.;Richters, J. -P.;Gutowski, J.;Voss, T.;
10:100:16 Ultrafast dynamics of the dielectric functions of ZnO and BaTiO3 thin films after intense femtosecond laser excitation
DOI:10.1063/1.4864017 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Acharya, S.;Chouthe, S.;Graener, H.;Boentgen, T.;Sturm, C.;Schmidt-Grund, R.;Grundmann, M.;Seifert, G.;
10:100:17 Experimental observation of spin-dependent electron many-body effects in CdTe
DOI:10.1063/1.4892399 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Horodyska, P.;Nemec, P.;Novotny, T.;Trojanek, F.;Maly, P.;
10:100:18 Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
DOI:10.1016/j.jcrysgro.2009.11.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Gladkov, P.;Humlicek, J.;Hulicius, E.;Simecek, T.;Paskova, T.;Evans, K.;
10:100:19 Analysis of strained surface layers of ZnO single crystals after irradiation with intense femtosecond laser pulses
DOI:10.1063/1.4807923 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Schneider, Andreas;Wolverson, Daniel;Sebald, Kathrin;Hodges, Chris;Kuball, Martin;Voss, Tobias;
10:100:20 Surface excitons on a ZnO(000-1) thin film
DOI:10.1063/1.4829466 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kuehn, S.;Friede, S.;Sadofev, S.;Blumstengel, S.;Henneberger, F.;Elsaesser, T.;
10:100:21 Localized excitons mediate defect emission in ZnO powders
DOI:10.1063/1.4798359 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Foreman, J. V.;Simmons, J. G., Jr.;Baughman, W. E.;Liu, J.;Everitt, H. O.;
10:100:22 Polarization-based all-optical logic controlled-NOT, XOR, and XNOR gates employing electro-optic effect in periodically poled lithium niobate
DOI:10.1063/1.3656000 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Zhang, Yinxing;Chen, Yuping;Chen, Xianfeng;
10:100:23 Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
DOI:10.1063/1.3678195 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Gladkov, P.;Hulicius, E.;Paskova, T.;Preble, E.;Evans, K. R.;
10:100:24 Ultrafast relaxation and absorption saturation at near exciton resonance in a thin ZnO epilayer
DOI:10.1063/1.3525993 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Ou, Po-Chi;Liu, Wei-Rein;Ton, Ho-Jei;Lin, Ja-Hon;Hsieh, Wen-Feng;
10:100:25 Dynamics of optical nonlinearities in GaN
DOI:10.1063/1.4820929 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Fang, Yu;Wu, Xing-Zhi;Ye, Fei;Chu, Xiang-Yong;Li, Zhong-Guo;Yang, Jun-Yi;Song, Ying-Lin;
10:100:26 Radial space-charge-limited electron flow in semi-insulating GaN:Fe
DOI:10.1063/1.3609071 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Mares, Jiri J.;Hubik, Pavel;Kristofik, Jozef;Prusakova, Lucie;Uxa, Stepan;Paskova, Tanya;Evans, Keith;
10:101:1 Advances in the synthesis of ZnO nanomaterials for varistor devices
DOI:10.1039/c3tc00575e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:19 AU: Pillai, Suresh C.;Kelly, John M.;Ramesh, Raghavendra;McCormack, Declan E.;
10:101:2 Microstructure Engineering to Drastically Reduce the Leakage Currents of High Voltage ZnO Varistor Ceramics
DOI:10.1111/j.1551-2916.2012.05318.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:2 AU: Peiteado, Marco;Reyes, Yhasmin;Cruz, Ana M.;Calatayud, David G.;Fernandez-Hevia, Daniel;Caballero, Amador C.;
10:101:3 Progressive degradation of high voltage ZnO commercial varistors upon Fe2O3 doping
DOI:10.1016/j.ceramint.2014.05.057 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Peiteado, M.;Cruz, A. M.;Reyes, Y.;De Frutos, J.;Calatayud, D. G.;Jardiel, T.;
10:101:4 Peculiar effects of microwave sintering on ZnO based varistors properties
DOI:10.1016/j.jallcom.2011.03.048 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Savary, Etienne;Marinel, Sylvain;Gascoin, Franck;Kinemuchi, Yoshiaki;Pansiot, Julien;Retoux, Richard;
10:101:5 Defect-induced room temperature ferromagnetism in B-doped ZnO
DOI:10.1016/j.ceramint.2012.11.060 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Yilmaz, S.;Nisar, J.;Atasoy, Y.;McGlynn, E.;Ahuja, R.;Parlak, M.;Bacaksiz, E.;
10:101:6 Improvement in electrical stability of ZnO varistors by infiltration of molten Bi2O3
DOI:10.1016/j.jallcom.2010.05.042 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Yuan, Kaiyang;Li, Guorong;Zheng, Liaoying;Cheng, Lihong;Meng, Lei;Yao, Zheng;Yin, Qingrui;
10:101:7 Synthesis of novel core-shell nanocomposites for fabricating high breakdown voltage ZnO varistors
DOI:10.1039/c1jm10807g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:5 AU: Meng, Lei;Zheng, Liaoying;Cheng, Lihong;Li, Guorong;Huang, Lizhu;Gu, Yan;Zhang, Fuping;
10:101:8 Microstructural engineering of ZnO-based varistor ceramics
DOI:10.1007/s10853-011-5937-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:9 AU: Recnik, Aleksander;Bernik, Slavko;Daneu, Nina;
10:101:9 Microstructure and electrical properties of Sc2O3-doped ZnO-Bi2O3-based varistor ceramics
DOI:10.1016/j.ceramint.2010.09.032 JN:CERAMICS INTERNATIONAL PY:2011
TC:27 AU: Xu, Dong;Cheng, Xiaonong;Zhao, Guoping;Yang, Juan;Shi, Liyi;
10:101:10 Sodium impurities in ZnO-Bi2O3-Sb2O3 based varistors
DOI:10.1016/j.ceramint.2010.10.016 JN:CERAMICS INTERNATIONAL PY:2011
TC:7 AU: Peiteado, M.;Iglesias, Y.;Caballero, A. C.;
10:101:11 Effect of thermal annealing on electrical degradation characteristics of Sb-Bi-Mn-Co-added ZnO varistors
DOI:10.1016/j.jeurceramsoc.2009.06.006 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:13 AU: Takada, Masayuki;Yoshikado, Shinzo;
10:101:12 Nanofillers in ZnO based materials: a 'smart' technique for developing miniaturized high energy field varistors
DOI:10.1039/c3tc31049c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Anas, S.;Mahesh, K. V.;Jobin, V.;Prasanth, S.;Ananthakumar, S.;
10:101:13 Microwave-assisted sintering of ZnO varistors: Local microstructure and functional property variations
DOI:10.1016/j.mseb.2010.02.018 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:11 AU: Leach, C.;Ali, N. K.;Cupertino, D.;Freer, R.;
10:101:14 Sintering of surfactant modified ZnO-Bi2O3 based varistor nanopowders
DOI:10.1016/j.ceramint.2010.07.017 JN:CERAMICS INTERNATIONAL PY:2010
TC:10 AU: Anas, S.;Metz, R.;Sanoj, M. A.;Mangalaraja, R. V.;Ananthakumar, S.;
10:101:15 Influence of the preparation process on the electrical properties of high-field co-doped zinc oxide varistors
DOI:10.1016/j.ceramint.2013.04.080 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Gadacz, Geoffroy;Beaudet-Savignat, Sophie;Longuet, Laurence;Longuet, Jean-Louis;
10:101:16 Microstructure and electrical properties of rare earth doped ZnO-based varistor ceramics
DOI:10.1016/j.ceramint.2012.08.067 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Li, Ji-le;Chen, Guo-hua;Yuan, Chang-lai;
10:101:17 Analysis of High-Voltage ZnO Varistor Prepared from a Novel Chemically Aided Method
DOI:10.1111/j.1551-2916.2010.03865.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:4 AU: Cheng, Lihong;Li, Guorong;Zheng, Liaoying;Zeng, Jiangtao;Gu, Yan;Zhang, Fuping;
10:101:18 Enhancement of the Electrical Stability of ZnO Varistors by a Novel Immersion Process
DOI:10.1111/j.1551-2916.2011.04453.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:2 AU: Meng, Lei;Zheng, Liaoying;Cheng, Lihong;Yao, Zheng;Li, Guorong;Bernik, Slavko;
10:101:19 Grain-Growth Phenomena in ZnO Ceramics in the Presence of Inversion Boundaries
DOI:10.1111/j.1551-2916.2010.04290.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:10 AU: Daneu, Nina;Recnik, Aleksander;Bernik, Slavko;
10:101:20 Microstructure and electrical properties of Dy2O3-doped ZnO-Bi2O3 based varistor ceramics
DOI:10.1016/j.materresbull.2013.10.032 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Chen, Guo-hua;Li, Ji-le;Yang, Yun;Yuan, Chang-lai;Zhou, Chang-rong;
10:101:21 Microstructure and electrical properties of Sm2O3 doped Bi2O3-based ZnO varistor ceramics
DOI:10.1016/j.mseb.2011.04.009 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:15 AU: Ashraf, M. A.;Bhuiyan, A. H.;Hakim, M. A.;Hossain, M. T.;
10:101:22 Effects of microwave sintering on intrinsic defects concentrations in ZnO-based varistors
DOI:10.1016/j.ceramint.2014.04.142 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Kharchouche, Faical;Savary, Etienne;Thuault, Anthony;Marinel, Sylvain;d'Astorg, Sophie;Rguiti, Mohamed;Belkhiat, Saad;Courtois, Christian;Leriche, Anne;
10:101:23 Structure of Spinel-Type Phases in the ZnO-MnxOy System
DOI:10.1111/j.1551-2916.2009.03445.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:3 AU: Peiteado, Marco;Kodre, Alojz;Arcon, Iztok;Caballero, Amador C.;Makovec, Darko;
10:101:24 Comparative Study of Microstructure and Electrical Properties of Varistors Prepared from Plasma Vapor-Phase Reaction Process and French Process ZnO Powders
DOI:10.1111/j.1551-2916.2011.04575.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:1 AU: Lu, Zhen-ya;Qiu, Pei;Wang, Xiao-qing;Chen, Zhiwu;Wu, Jian-qing;Zhang, Yao-ping;
10:101:25 Shock-sintering of low-voltage ZnO-based varistor ceramics with Bi4Ti3O12 additions
DOI:10.1016/j.jeurceramsoc.2012.08.023 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2013
TC:3 AU: Daneu, Nina;Gramc, Nives Novak;Recnik, Aleksander;Krzmanc, Marjeta Macek;Bernik, Slavko;
10:101:26 New insights on physico-chemical transformations of ZnO: From clustered multipods to single crystalline nanoplates
DOI:10.1016/j.matchemphys.2012.03.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:1 AU: Anas, S.;Mahesh, K. V.;Ambily, K. J.;Chandran, M. R.;Uma, K.;Warrier, K. G. K.;Ananthakumar, S.;
10:101:27 Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures
DOI:10.1016/j.tsf.2011.01.254 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Bacaksiz, E.;Aksu, S.;Cankaya, G.;Yilmaz, S.;Polat, I.;Kucukomeroglu, T.;Varilci, A.;
10:101:28 Influence of Ta2O5 doping and microwave sintering on TiO2-based varistor properties
DOI:10.1016/j.ceramint.2014.06.012 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Zhao, Jingzhong;Wang, Boxue;Lu, Kathy;
10:101:29 Na2CO3 doping effect on ZnO-Pr6O11-Co3O4 ceramic varistor properties
DOI:10.1016/j.jallcom.2013.01.047 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Mei, Li-Then;Hsiang, Hsing-I;Hsi, Chi-Shiung;Yen, Fu-Su;
10:101:30 The Effect of Bi2O3/SiO2 Molar Ratio and Annealing on the dc Degradation of ZnO Varistors
DOI:10.1111/j.1551-2916.2011.04654.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:2 AU: Meng, Lei;Li, Guorong;Zheng, Liaoying;Cheng, Lihong;Zeng, Jiangtao;Huang, Hualing;
10:101:31 Grain growth behaviour of ZnO-based multilayer varistors
DOI:10.1016/j.jeurceramsoc.2009.05.008 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:6 AU: Kuo, Shu-Ting;Tuan, Wei-Hsing;
10:101:32 Microstructure control to reduce leakage current of medium and high voltage ceramic varistors based on doped ZnO
DOI:10.1016/j.jeurceramsoc.2014.05.033 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2014
TC:2 AU: Izoulet, Antoine;Guillemet-Fritsch, Sophie;Estournes, Claude;Morel, Jonathan;
10:101:33 Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics
DOI:10.1007/s11664-010-1118-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:2 AU: Slankamenac, M.;Ivetic, T.;Nikolic, M. V.;Ivetic, N.;Zivanov, M.;Pavlovic, V. B.;
10:102:1 Preparation and characterization of Al doped ZnO thin films by sol-gel process
DOI:10.1016/j.jallcom.2012.07.075 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:16 AU: Li, Jianzi;Xu, Jian;Xu, Qingbo;Fang, Gang;
10:102:2 Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition
DOI:10.1016/j.apsusc.2010.08.064 JN:APPLIED SURFACE SCIENCE PY:2010
TC:31 AU: Yao, Pin-Chuan;Hang, Shih-Tse;Lin, Yu-Shuan;Yen, Wen-Tsai;Lin, Yi-Cheng;
10:102:3 Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing
DOI:10.1088/0957-4484/25/19/195301 JN:NANOTECHNOLOGY PY:2014
TC:4 AU: Vunnam, S.;Ankireddy, K.;Kellar, J.;Cross, W.;
10:102:4 The effect of heating rate on the structural and electrical properties of sol-gel derived Al-doped ZnO films
DOI:10.1016/j.apsusc.2011.03.031 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Gao, Meizhen;Wu, Xiaonan;Liu, Jing;Liu, Wenbao;
10:102:5 Preparation of Al-doped ZnO nanostructures and their application in acrylic resin-based heat insulation coatings
DOI:10.1016/j.mssp.2013.05.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Zhang, Yu;Liu, Leiying;Xing, Jianjun;Yu, Laigui;Zhang, Jingwei;Zhang, Zhijun;
10:102:6 Factors Influencing the Conductivity of Aqueous Sol(ution)-Gel-Processed Al-Doped ZnO Films
DOI:10.1021/cm501820a JN:CHEMISTRY OF MATERIALS PY:2014
TC:1 AU: Damm, Hanne;Adriaensens, Peter;De Dobbelaere, Christopher;Capon, Boris;Elen, Ken;Drijkoningen, Jeroen;Conings, Bert;Manca, Jean V.;D'Haen, Jan;Detavernier, Christophe;Magusin, Pieter C. M. M.;Hadermann, Joke;Hardy, An;Van Bael, Marlies K.;
10:102:7 Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries
DOI:10.1063/1.3511346 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:33 AU: Nasr, B.;Dasgupta, S.;Wang, D.;Mechau, N.;Kruk, R.;Hahn, H.;
10:102:8 A study on the Al doping behavior with sol aging time and its effect on structural and optical properties of sol-gel prepared ZnO thin films
DOI:10.1016/j.tsf.2013.02.126 JN:THIN SOLID FILMS PY:2013
TC:9 AU: Shahzad, M. Babar;Qi, Yang;Lu, Hong;Wang, Xiandi;
10:102:9 Synthesis of high-quality Al-doped ZnO nanoink
DOI:10.1063/1.3273501 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Thu, Tran V.;Maenosono, Shinya;
10:102:10 Low-temperature preparation of transparent conductive Al-doped ZnO thin films by a novel sol-gel method
DOI:10.1007/s10853-014-8172-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:2 AU: Guo, Dongyun;Sato, Kuninori;Hibino, Shingo;Takeuchi, Tetsuya;Bessho, Hisami;Kato, Kazumi;
10:102:11 Effect of Annealing Ambient on the Electrical and Optical Properties of Aluminum-Doped ZnO Films Produced via a Sol-Gel Process
DOI:10.1007/s11664-014-3114-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Ho, Yung-Shou;Chen, Yi-Siou;Wu, Cheng-Heng;
10:102:12 Electrical and optical properties of ultrasonically sprayed Al-doped zinc oxide thin films
DOI:10.1016/j.mseb.2010.03.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:27 AU: Babu, B. J.;Maldonado, A.;Velumani, S.;Asomoza, R.;
10:102:13 Effect of energetic electron beam treatment on transparent conductive ZnO thin films
DOI:10.1016/j.tsf.2013.10.012 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Park, Chanhyoung;Kim, Solbaro;Kim, Changheon;Jeong, Chaehwan;Lim, Sangwoo;
10:102:14 Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films
DOI:10.1063/1.3640406 JN:AIP ADVANCES PY:2011
TC:6 AU: Srivastava, Amit Kumar;Kumar, Jitendra;
10:102:15 A wet chemical preparation of transparent conducting thin films of Al-doped ZnO nanoparticles
DOI:10.1007/s11051-011-0578-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:5 AU: Tarasov, Konstantin;Raccurt, Olivier;
10:102:16 Doping optimization and surface modification of aluminum doped zinc oxide films as transparent conductive coating
DOI:10.1016/j.tsf.2012.01.019 JN:THIN SOLID FILMS PY:2012
TC:12 AU: Inamdar, Darshana;Agashe, Chitra;Kadam, Pratibha;Mahamuni, Shailaja;
10:102:17 Effects of atomic oxygen treatment on structures, morphologies and electrical properties of ZnO:Al films
DOI:10.1016/j.apsusc.2010.02.041 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Wang, Wenwen;Li, Chunzhi;Zhang, Junying;Diao, Xungang;
10:102:18 Structure and optical properties of AlxZn1-xO alloys by sol-gel technique
DOI:10.1016/j.materresbull.2010.12.010 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Wei, Min;Deng, Hong;Deng, Xueran;Yang, Chunrong;Chen, Jinju;
10:102:19 Sol-gel derived zinc oxide films alloyed with cobalt and aluminium
DOI:10.1016/j.tsf.2009.10.009 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Sharma, Mamta;Mehra, R. M.;
10:102:20 Effects of post-deposition heat treatment on the microstructure and properties of Al-doped ZnO thin films prepared by aqueous phase deposition
DOI:10.1016/j.tsf.2011.11.045 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Yao, Pin-Chuan;Hang, Shih-Tse;Wu, Menq-Jiun;Hsiao, Wen-Tse;
10:103:1 Transparent conductive Nb-doped TiO2 films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system.
DOI:10.1016/j.apsusc.2014.02.126 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Oka, Nobuto;Sanno, Yuta;Jia, Junjun;Nakamura, Shin-ichi;Shigesato, Yuzo;
10:103:2 In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films
DOI:10.1116/1.3430556 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:17 AU: Tsukamoto, Naoki;Watanabe, Daisuke;Saito, Motoaki;Sato, Yasushi;Oka, Nobuto;Shigesato, Yuzo;
10:103:3 High-rate deposition of Sb-doped SnO2 films by reactive sputtering using the impedance control method
DOI:10.1016/j.tsf.2011.04.151 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Muto, Yu;Oka, Nobuto;Tsukamoto, Naoki;Iwabuchi, Yoshinori;Kotsubo, Hidefumi;Shigesato, Yuzo;
10:103:4 High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn-Ta metal-sintered target
DOI:10.1016/j.tsf.2011.10.061 JN:THIN SOLID FILMS PY:2012
TC:12 AU: Muto, Y.;Nakatomi, S.;Oka, N.;Iwabuchi, Y.;Kotsubo, H.;Shigesato, Y.;
10:103:5 Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering
DOI:10.1016/j.tsf.2013.10.153 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Kusayanagi, Minehide;Uchida, Azusa;Oka, Nobuto;Jia, Junjun;Nakamura, Shin-Ichi;Shigesato, Yuzo;
10:103:6 In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process
DOI:10.1063/1.4812668 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Jia, Junjun;Torigoshi, Yoshifumi;Shigesato, Yuzo;
10:103:7 In-situ analyses on the reactive sputtering process to deposit Al-doped ZnO films using an Al-Zn alloy target
DOI:10.1016/j.tsf.2011.08.031 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Tsukamoto, Naoki;Oka, Nobuto;Shigesato, Yuzo;
10:103:8 Study on reactive sputtering to deposit transparent conductive amorphous In2O3-ZnO films using an In-Zn alloy target
DOI:10.1016/j.tsf.2013.10.109 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Tsukamoto, Naoki;Sensui, Sakae;Jia, Junjun;Oka, Nobuto;Shigesato, Yuzo;
10:103:9 Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar-pulsing and plasma-emission control systems
DOI:10.1016/j.tsf.2009.09.177 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Hirohata, Kento;Nishi, Yasutaka;Tsukamoto, Naoki;Oka, Nobuto;Sato, Yasushi;Yamamoto, Isao;Shigesato, Yuzo;
10:103:10 Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering
DOI:10.1016/j.tsf.2014.02.005 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Jia, Junjun;Yoshimura, Aya;Kagoya, Yukihiro;Oka, Nobuto;Shigesato, Yuzo;
10:103:11 Thermophysical and electrical properties of Al-doped ZnO films
DOI:10.1063/1.4706572 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Oka, Nobuto;Kimura, Kentaro;Yagi, Takashi;Taketoshi, Naoyuki;Baba, Tetsuya;Shigesato, Yuzo;
10:103:12 High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system
DOI:10.1116/1.3308621 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:11 AU: Nishi, Yasutaka;Hirohata, Kento;Tsukamoto, Naoki;Sato, Yasushi;Oka, Nobuto;Shigesato, Yuzo;
10:103:13 Review of pulmonary toxicity of indium compounds to animals and humans
DOI:10.1016/j.tsf.2009.10.123 JN:THIN SOLID FILMS PY:2010
TC:24 AU: Tanaka, Akiyo;Hirata, Miyuki;Kiyohara, Yutaka;Nakano, Makiko;Omae, Kazuyuki;Shiratani, Masaharu;Koga, Kazunori;
10:103:14 Thermophysical properties of SnO2-based transparent conductive films: Effect of dopant species and structure compared with In2O3-, ZnO-, and TiO2-based films
DOI:10.1557/jmr.2014.191 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:0 AU: Oka, Nobuto;Yamada, Saori;Yagi, Takashi;Taketoshi, Naoyuki;Jia, Junjun;Shigesato, Yuzo;
10:103:15 High-rate deposition of high-quality Sn-doped In2O3 films by reactive magnetron sputtering using alloy targets
DOI:10.1016/j.tsf.2011.06.063 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Oka, Nobuto;Kawase, Yukari;Shigesato, Yuzo;
10:103:16 Thermophysical properties of aluminum oxide and molybdenum layered films
DOI:10.1016/j.tsf.2009.09.180 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Oka, Nobuto;Arisawa, Ryo;Miyamura, Amica;Sato, Yasushi;Yagi, Takashi;Taketoshi, Naoyuki;Baba, Tetsuya;Shigesato, Yuzo;
10:103:17 In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering
DOI:10.1016/j.tsf.2011.04.143 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Tsukamoto, Naoki;Tazawa, Toshiyuki;Oka, Nobuto;Saito, Motoaki;Shigesato, Yuzo;
10:103:18 Sputter-deposited polycrystalline tantalum-doped SnO2 layers
DOI:10.1016/j.tsf.2013.05.147 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Weidner, Mirko;Broetz, Joachim;Klein, Andreas;
10:103:19 Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition
DOI:10.1016/j.tsf.2009.09.187 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Nakao, Shoichiro;Yamada, Naoomi;Hitosugi, Taro;Hirose, Yasushi;Shimada, Toshihiro;Hasegawa, Tetsuya;
10:103:20 Surface segregation in Nb-doped BaTiO3 films
DOI:10.1016/j.apsusc.2010.03.146 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Arveux, Emmanuel;Payan, Sandrine;Maglione, Mario;Klein, Andreas;
10:103:21 Ab initio investigation on a promising transparent conductive oxide, Nb:SnO2
DOI:10.1016/j.tsf.2012.04.049 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Zhang, Guanglei;Qin, Guoqiang;Yu, Gang;Hu, Qianku;Fu, Hua;Shao, Changtao;
10:104:1 The effect of seed layer on morphology of ZnO nanorod arrays grown by hydrothermal method
DOI:10.1016/j.jallcom.2009.09.020 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:48 AU: Tao, Yinglei;Fu, Ming;Zhao, Ailun;He, Dawei;Wang, Yongsheng;
10:104:2 Structural and blue emission properties of Al-doped ZnO nanorod array thin films grown by hydrothermal method
DOI:10.1007/s13391-012-2071-5 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:32 AU: Kim, Soaram;Kim, Min Su;Nam, Giwoong;Leem, Jae-Young;
10:104:3 Effects of post-heated ZnO seed layers on structural and optical properties of ZnO nanostructures grown by hydrothermal method
DOI:10.1007/s13391-013-2190-7 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:12 AU: Kim, Soaram;Nam, Giwoong;Yim, Kwang Gug;Lee, Jewon;Kim, Yangsoo;Leem, Jae-Young;
10:104:4 Synthesis, Oxygen Permeation, and Electrical Properties of (La1-xSrx)(Mn0.85Fe0.05Co0.05Ni0.05)O3+delta-YSZ Composite
DOI:10.1007/s13391-011-0910-4 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:4 AU: Choi, Hyorim;Kim, Eun Yi;Whang, Chin Myung;
10:104:5 Hydrothermally Grown Boron-Doped ZnO Nanorods for Various Applications: Structural, Optical, and Electrical Properties
DOI:10.1007/s13391-013-3130-2 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Kim, Soaram;Park, Hyunggil;Nam, Giwoong;Yoon, Hyunsik;Kim, Byunggu;Ji, Iksoo;Kim, Younggyu;Kim, Ikhyun;Park, Youngbin;Kang, Daeho;Leem, Jae-Young;
10:104:6 Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol-gel dip-coating method
DOI:10.1016/j.optmat.2013.06.048 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Kim, Soaram;Yoon, Hyunsik;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young;
10:104:7 Effects of Metal-Organic Chemical Vapour Deposition grown seed layer on the fabrication of well aligned ZnO nanorods by Chemical Bath Deposition
DOI:10.1016/j.tsf.2011.05.055 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Fragala, Maria Elena;Aleeva, Yana;Malandrino, Graziella;
10:104:8 Laser-assisted sol-gel growth and characteristics of ZnO thin films
DOI:10.1063/1.4729944 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kim, Min Su;Kim, Soaram;Leem, Jae-Young;
10:104:9 Structural, Optical, and Electrical Properties of ZnO Thin Films Deposited by Sol-Gel Dip-Coating Process at Low Temperature
DOI:10.1007/s13391-013-3312-y JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Kim, Soaram;Nam, Giwoong;Yoon, Hyunsik;Park, Hyunggil;Choi, Hyonkwang;Kim, Jong Su;Kim, Jin Soo;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young;
10:104:10 Solution growth of vertical aligned ZnO nanorod arrays on ZnO seed layers fabricated by Langmuir-Blodgett method
DOI:10.1016/j.jallcom.2013.05.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Feng, Qian;Tang, Dongyan;Jiang, Enying;Gu, Shuo;Han, Shuai;
10:104:11 Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures
DOI:10.1016/j.matchemphys.2012.05.062 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:9 AU: Pineda-Hernandez, G.;Escobedo-Morales, A.;Pal, U.;Chigo-Anota, E.;
10:104:12 Growth and Characterization of Seed Layer-Free ZnO Thin Films Deposited on Porous Silicon by Hydrothermal Method
DOI:10.1007/s13391-011-0130-y JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:10 AU: Kim, Min Su;Vim, Kwang Gug;Kim, Do Yeob;Kim, Soaram;Nam, Giwoong;Lee, Dong-Yul;Kim, Sung-O;Kim, Jin Soo;Kim, Jong Su;Son, Jeong-Sik;Leem, Jae-Young;
10:104:13 Effects of growth temperature for buffer layers on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.optmat.2012.03.024 JN:OPTICAL MATERIALS PY:2012
TC:7 AU: Kim, Min Su;Kim, Soaram;Nam, Giwoong;Lee, Dong-Yul;Leem, Jae-Young;
10:104:14 Compact and vertically-aligned ZnO nanorod thin films by the low-temperature solution method
DOI:10.1016/j.tsf.2009.11.082 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Ting, Chu-Chi;Li, Chang-Hung;Kuo, Chih-You;Hsu, Chia-Chen;Wang, Hsiang-Chen;Yang, Ming-Hsun;
10:104:15 Effects of cooling rate and post-heat treatment on properties of ZnO thin films deposited by sol-gel method
DOI:10.1016/j.apsusc.2011.05.092 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Kim, Min Su;Yim, Kwang Gug;Lee, Dong-Yul;Kim, Jin Soo;Kim, Jong Su;Son, Jeong-Sik;Leem, Jae-Young;
10:104:16 Effects of in doping on structural and optical properties of ZnO nanorods grown by hydrothermal method
DOI:10.1007/s13391-013-0048-7 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Kim, Soaram;Lee, Sang-heon;Kim, Jong Su;Kim, Jin Soo;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young;
10:104:17 Seed-layer-free hydrothermal growth of zinc oxide nanorods on porous silicon
DOI:10.1007/s13391-013-3139-6 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Kim, Soaram;Kim, Min Su;Park, Hyunggil;Nam, Giwoong;Yoon, Hyunsik;Leem, Jae-Young;
10:104:18 Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal method
DOI:10.1016/j.jcrysgro.2011.01.096 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Kim, Min Su;Yim, Kwang Gug;Choi, Hyun Young;Cho, Min Young;Kim, Ghun Sik;Jeon, Su Min;Lee, Dong-Yul;Kim, Jin Soo;Kim, Jong Su;Son, Jeong-Sik;Lee, Joo In;Leem, Jae-Young;
10:104:19 Influence of Gas Flow on Structural and Optical Properties of ZnO Submicron Particles Grown on Au Nano Thin Films by Vapor Phase Transport
DOI:10.1007/s13391-014-4004-y JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Kim, Soaram;Nam, Giwoong;Leem, Jae-Young;
10:104:20 Improvement of green cathodoluminescence of zinc oxide stacked films prepared by high-power excimer laser irradiation of sol-gel-derived precursors
DOI:10.1016/j.tsf.2009.10.137 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Nagase, T.;Kominami, H.;Nakanishi, Y.;Shinozaki, K.;Mizutani, N.;
10:104:21 Effects of annealing temperature on optical properties of ZnO nanorods with Mg0.2Zn0.8O capping layers
DOI:10.1007/s13391-013-0049-6 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:2 AU: Yoon, Hyunsik;Nam, Giwoong;Park, Hyunggil;Son, Jeong-Sik;Leem, Jae-Young;
10:104:22 Strain evolution in heteroepitaxial ZnO/sapphire(0001) thin films grown by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2010.03.049 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Seo, S. H.;Kang, H. C.;
10:105:1 Growth and photoluminescence of zinc blende ZnS nanowires via metalorganic chemical vapor deposition
DOI:10.1016/j.jallcom.2011.02.029 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:12 AU: Lei, M.;Fu, X. L.;Li, P. G.;Tang, W. H.;
10:105:2 Solvothermal route to Fe-N-S-O nanowires
DOI:10.1016/j.jallcom.2010.08.069 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:0 AU: Du, Yinxiao;Ding, Pei;
10:105:3 Texture-controlled growth of ZnO nanorods/films by aluminum ion and solvent
DOI:10.1016/j.jallcom.2010.07.198 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:3 AU: Wang, Mingsong;Xu, Zhijie;Ge, Longfei;Kim, Eui Jung;Hahn, Sung Hong;Yang, Juan;Cheng, Xiaonong;
10:105:4 Facile route to straight ZnGa2O4 nanowires and their cathodoluminescence properties
DOI:10.1016/j.jallcom.2009.09.145 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:26 AU: Lei, M.;Hu, Q. R.;Wang, X.;Wang, S. L.;Tang, W. H.;
10:105:5 Ultra-low turn-on field from ultra-long ZnO nanowire arrays emitters
DOI:10.1016/j.jallcom.2009.11.038 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Meng, Gang;Fang, Xiaodong;Zhou, Yikai;Seo, JongUk;Dong, Weiwei;Hasegawa, Shigehiko;Asahi, Hajime;Tambo, Hiroyuki;Kong, Mingguang;Li, Liang;
10:105:6 Amino acid-assisted synthesis of ZnO twin-prisms and functional group's influence on their morphologies
DOI:10.1016/j.jallcom.2010.07.192 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Liu, Haixia;Huang, Baibiao;Wang, Zeyan;Qin, Xiaoyan;Zhang, Xiaoyang;Wei, Jiyong;Dai, Ying;Wang, Peng;Whangbo, Myung-Hwan;
10:105:7 Synthesis of ZnO nanostructures in organic solvents and their photoluminescence properties
DOI:10.1016/j.jallcom.2010.02.086 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Hu, Q. R.;Wang, S. L.;Jiang, P.;Xu, H.;Zhang, Y.;Tang, W. H.;
10:105:8 High-Efficiency Mechanical Energy Storage and Retrieval Using Interfaces in Nanowires
DOI:10.1021/nl100263p JN:NANO LETTERS PY:2010
TC:21 AU: Li, Suzhi;Ding, Xiangdong;Li, Ju;Ren, Xiaobing;Sun, Jun;Ma, Evan;
10:105:9 Novel pulsed electron deposition route to ZnO nanowire arrays
DOI:10.1016/j.jallcom.2010.11.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:1 AU: Li, P. G.;Hu, Q. R.;Tang, W. H.;
10:105:10 Catalyst-free synthesis of honeycomb-like and straight ZnO nanowires
DOI:10.1016/j.jallcom.2010.01.084 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Du, Yinxiao;Yuan, Qing-Xin;
10:105:11 Annealing effects on the cathodoluminescence properties of individual ZnO nanowire
DOI:10.1016/j.matlet.2011.04.006 JN:MATERIALS LETTERS PY:2011
TC:3 AU: Du, Yinxiao;Zeng, Fanguang;
10:105:12 Low-temperature route to dispersed manganese dioxide nanorods
DOI:10.1016/j.matlet.2012.03.071 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Huang, K.;Lei, M.;Zhang, R.;Yang, H. J.;Yang, Y. G.;
10:105:13 Low-temperature synthesis and photoluminescence of ZnO nanostructures by a facile hydrothermal process
DOI:10.1016/j.jallcom.2009.09.110 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Li, P. G.;Wang, S. L.;Tang, W. H.;
10:105:14 Ultralong zinc-blende ZnS nanowires grown on polar C face of 6H-SiC substrates at low temperatures by metalorganic chemical vapor deposition
DOI:10.1016/j.materresbull.2011.01.006 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:4 AU: Lei, M.;Li, P. G.;Li, L. H.;Tang, W. H.;
10:105:15 Aging effects on the optical properties of an individual Zn-rich ZnO nanowire
DOI:10.1016/j.jallcom.2010.10.008 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Du, Yinxiao;Zeng, Fanguang;
10:105:16 Thermal evaporation route to zinc stannate nanowires and the cathodoluminescence of the individual nanowires
DOI:10.1016/j.jallcom.2010.04.121 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Du, Yinxiao;Ding, Pei;
10:105:17 Synthesis of hollow ZnO microspheres and its novel UV absorption
DOI:10.1016/j.matchemphys.2010.05.057 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:2 AU: Jin, Dalai;Liao, Na;Xu, Xiaoqin;Yu, Xiaojing;Wang, Lina;Wang, Longcheng;
10:105:18 Synthesis of Ga-riched zinc gallate nanowires by reactive evaporation and the cathodoluminescence properties of individual nanowires
DOI:10.1016/j.materresbull.2010.06.027 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:0 AU: Du, Yinxiao;Li, Guang-Cheng;
10:106:1 Electrical, optical, and microstructural properties of sol-gel derived HfZnO thin films
DOI:10.1016/j.jallcom.2014.02.172 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Li, Chih-Hung;Chen, Jian-Zhang;
10:106:2 Bandgap tuning of MgZnO in flexible transparent n(+)-ZnO:Al/n-MgZnO/p-CuAlOx:Ca diodes on polyethylene terephthalate substrates
DOI:10.1016/j.jallcom.2012.08.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:14 AU: Chi, Chu-Te;Cheng, I-Chun;Chen, Jian-Zhang;
10:106:3 Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments
DOI:10.1063/1.4819232 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Li, Chih-Hung;Chen, Jian-Zhang;Cheng, I-Chun;
10:106:4 Sol-gel derived amorphous/nanocrystalline MgZnO thin films annealed by atmospheric pressure plasma jets
DOI:10.1016/j.ceramint.2013.10.052 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Lien, Shao-Tzu;Chen, Jian-Zhang;Yang, Yao-Jhen;Hsu, Cheng-Che;Cheng, I-Chun;
10:106:5 Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments
DOI:10.1016/j.tsf.2014.02.028 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Li, Chih-Hung;Chung, Hantsun;Chen, Jian-Zhang;Cheng, I-Chun;
10:106:6 Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures
DOI:10.1002/adma.200902162 JN:ADVANCED MATERIALS PY:2010
TC:25 AU: Nakano, Masaki;Tsukazaki, Atsushi;Ohtomo, Akira;Ueno, Kazunori;Akasaka, Shunsuke;Yuji, Hiroyuki;Nakahara, Ken;Fukumura, Tomoteru;Kawasaki, Masashi;
10:106:7 Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process
DOI:10.1063/1.3475500 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:22 AU: Chin, Huai-An;Cheng, I-Chun;Huang, Chih-I;Wu, Yuh-Renn;Lu, Wen-Sen;Lee, Wei-Li;Chen, Jian Z.;Chiu, Kuo-Chuang;Lin, Tzer-Shen;
10:106:8 Flexible Transparent ZnO:Al/ZnO/CuAlO (x) :Ca Heterojunction Diodes on Polyethylene Terephthalate Substrates
DOI:10.1007/s11664-013-2573-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:11 AU: Chi, Chu-Te;Lu, I-Feng;Chiu, I-Chung;Chen, Po-Yuan;Huang, Bo-Wei;Cheng, I-Chun;Chen, Jian-Zhang;
10:106:9 Phase transitions of room temperature RF-sputtered ZnO/Mg0.4Zn0.6O multilayer thin films after thermal annealing
DOI:10.1016/j.tsf.2011.09.052 JN:THIN SOLID FILMS PY:2012
TC:12 AU: Chen, Jian Zhang;Li, Chih-Hung;Cheng, I-Chun;
10:106:10 Transport properties of the electron gas in ZnO/MgZnO heterostructures
DOI:10.1063/1.3455881 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Gold, A.;
10:106:11 Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping
DOI:10.1016/j.tsf.2011.01.402 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Kim, Woong-Sun;Moon, Yeon-Keon;Kim, Kyung-Taek;Shin, Sae-Young;Du Ahn, Byung;Lee, Je-Hun;Park, Jong-Wan;
10:106:12 Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties
DOI:10.1063/1.4901503 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lee, Su-Jae;Hwang, Chi-Sun;Pi, Jae-Eun;Yang, Jong-Heon;Oh, Himchan;Cho, Sung Haeng;Cho, Kyoung-Ik;Chu, Hye Yong;
10:106:13 Effects of drain-bias and ambient on hump formation in the transfer curves of positively gate-biased MgZnO thin film transistors
DOI:10.1016/j.tsf.2012.06.028 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Tsai, Yi-Shiuan;Li, Chih-Hung;Chiu, I-Chung;Chin, Huai-An;Cheng, I-Chun;Chen, Jian Z.;
10:106:14 Transport scattering time and single-particle relaxation time in ZnO/MgZnO heterostructures: Many-body effects
DOI:10.1063/1.3622310 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Gold, A.;
10:106:15 The influence of hafnium doping on bias stability in zinc oxide thin film transistors
DOI:10.1016/j.tsf.2011.01.079 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Kim, Woong-Sun;Moon, Yeon-Keon;Kim, Kyung-Taek;Shin, Sae-Young;Ahn, Byung Du;Lee, Je-Hun;Park, Jong-Wan;
10:106:16 Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering
DOI:10.1016/j.apsusc.2010.03.011 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Kong, Bo Hyun;Han, Won Suk;Kim, Young Yi;Cho, Hyung Koun;Kim, Jae Hyun;
10:106:17 Spatial distribution of two-dimensional electron gas in a ZnO/Mg0.2Zn0.8O heterostructure probed with a conducting polymer Schottky contact
DOI:10.1063/1.3309699 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Nakano, M.;Tsukazaki, A.;Ueno, K.;Gunji, R. Y.;Ohtomo, A.;Fukumura, T.;Kawasaki, M.;
10:106:18 Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate
DOI:10.1016/j.tsf.2010.08.158 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Hinoki, Toshio;Kyuhara, Chika;Agura, Hideaki;Yazawa, Kenji;Kinoshita, Kentaro;Ohmi, Koutoku;Kishida, Satoru;
10:107:1 Surface morphology and photoelectric properties of fluorine-doped tin oxide thin films irradiated with 532 nm nanosecond laser
DOI:10.1016/j.ceramint.2013.07.053 JN:CERAMICS INTERNATIONAL PY:2014
TC:11 AU: Li, Bao-jia;Huang, Li-jing;Zhou, Ming;Ren, Nai-fei;Wu, Bo;
10:107:2 A comparative study of different M(M = Al, Ag, Cu)/FTO bilayer composite films irradiated with nanosecond pulsed laser
DOI:10.1016/j.jallcom.2014.08.107 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Huang, Li-jing;Ren, Nai-fei;Li, Bao-jia;Zhou, Ming;
10:107:3 Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation
DOI:10.1016/j.apsusc.2011.03.091 JN:APPLIED SURFACE SCIENCE PY:2011
TC:14 AU: Tseng, Shih-Feng;Hsiao, Wen-Tse;Chiang, Donyau;Huang, Kuo-Cheng;Chou, Chang-Pin;
10:107:4 Structural and optical studies on sol-gel derived ZnO thin films by excimer laser annealing
DOI:10.1016/j.ceramint.2012.06.050 JN:CERAMICS INTERNATIONAL PY:2013
TC:12 AU: Tsay, Chien-Yie;Wang, Min-Chi;
10:107:5 Laser-assisted preparation and photoelectric properties of grating-structured Pt/FTO thin films
DOI:10.1016/j.apsusc.2014.06.184 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Ren, Nai-fei;Huang, Li-jing;Li, Bao-jia;Zhou, Ming;
10:107:6 Effects of nanosecond laser irradiation on photoelectric properties of AZO/FTO composite films
DOI:10.1016/j.apsusc.2012.11.065 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Li, Bao-jia;Zhou, Ming;Ma, Ming;Zhang, Wei;Tang, Wan-yi;
10:107:7 Effects of laser-induced recovery process on conductive property of SnO2: F thin films
DOI:10.1016/j.mseb.2010.10.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:19 AU: Chen, Ming-Fei;Lin, Keh-moh;Ho, Yu-Sen;
10:107:8 Improvement in overall photoelectric properties of Ag/FTO bilayer thin films using furnace/laser dual annealing
DOI:10.1016/j.matlet.2013.11.079 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Huang, Li-jing;Ren, Nai-fei;Li, Bao-jia;Zhou, Ming;
10:107:9 A study on electric properties for pulse laser annealing of ITO film after wet etching
DOI:10.1016/j.tsf.2012.09.010 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Lee, C. J.;Lin, H. K.;Li, C. H.;Chen, L. X.;Lee, C. C.;Wu, C. W.;Huang, J. C.;
10:107:10 Dye-sensitized solar tubes: A new solar cell design for efficient current collection and improved cell sealing
DOI:10.1016/j.solmat.2009.10.006 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:33 AU: Tachan, Zion;Ruhle, Sven;Zaban, Arie;
10:107:11 High precision patterning of ITO using femtosecond laser annealing process
DOI:10.1016/j.apsusc.2014.06.174 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Cheng, Chung-Wei;Lin, Cen-Ying;
10:107:12 High-resolution, resistless patterning of indium-tin-oxide thin films using excimer laser projection annealing process
DOI:10.1016/j.matlet.2010.01.068 JN:MATERIALS LETTERS PY:2010
TC:12 AU: Chae, Junghun;Jang, Linus;Jain, Kanti;
10:107:13 Patterning crystalline indium tin oxide by high repetition rate femtosecond laser-induced crystallization
DOI:10.1016/j.tsf.2010.07.025 JN:THIN SOLID FILMS PY:2010
TC:12 AU: Cheng, Chung-Wei;Lin, Cen-Ying;Shen, Wei-Chih;Lee, Yi-Ju;Chen, Jenq-Shyong;
10:107:14 Effects of laser irradiation on the structure and optical properties of ZnO thin films
DOI:10.1016/j.matlet.2010.06.022 JN:MATERIALS LETTERS PY:2010
TC:14 AU: Lu, Hui;Tu, Yaoquan;Lin, Xian;Fang, Bin;Luo, Duanbin;Laaksonen, Aatto;
10:107:15 Electrode patterning of ITO thin films by high repetition rate fiber laser
DOI:10.1016/j.apsusc.2014.04.084 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Lin, H. K.;Hsu, W. C.;
10:107:16 Femtosecond laser-induced nanoperiodic structures and simultaneous crystallization in amorphous indium-tin-oxide thin films
DOI:10.1016/j.apsusc.2014.07.071 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Cheng, C. W.;Lee, I. M.;Chen, J. S.;
10:107:17 Two-step optical annealing effects on spin-coated InAl-doped ZnO thin films
DOI:10.1016/j.jallcom.2014.07.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Park, Sang-Uk;Koh, Jung-Hyuk;
10:107:18 Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity
DOI:10.1016/j.matchemphys.2012.03.102 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:1 AU: da Silva, Vitor D. L.;de Andrade, Aloisio;Scalvi, Luis V. A.;Floriano, Emerson A.;Maciel, Jorge L. B., Jr.;Ravaro, Leandro P.;Santos, Julio C.;
10:107:19 Fabrication of micro/nano crystalline ITO structures by femtosecond laser pulses
DOI:10.1007/s00339-010-5810-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:11 AU: Cheng, C. W.;Shen, W. C.;Lin, C. Y.;Lee, Y. J.;Chen, J. S.;
10:107:20 High performance diffraction gratings made by e-beam lithography
DOI:10.1007/s00339-012-7346-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:13 AU: Zeitner, Uwe D.;Oliva, Maria;Fuchs, Frank;Michaelis, Dirk;Benkenstein, Tino;Harzendorf, Torsten;Kley, Ernst-Bernhard;
10:107:21 Sub-wavelength surface gratings for light redirection in transparent substrates
DOI:10.1063/1.4738777 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Buss, Thomas;Smith, Cameron L. C.;Christiansen, Mads Brokner;Marie, Rodolphe;Kristensen, Anders;
10:107:22 Throughput optimized a-Si/mu c-Si tandem solar cells on sputter-etched ZnO substrates
DOI:10.1016/j.solmat.2011.10.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:10 AU: Klein, Stefan;Rohde, Martin;Buschbaum, Susanne;Severin, Daniel;
10:107:23 Highly efficient broadband blazed grating in resonance domain
DOI:10.1063/1.4807764 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Oliva, M.;Michaelis, D.;Fuchs, F.;Tuennermann, A.;Zeitner, U. D.;
10:107:24 Micro-scale patterning of indium tin oxide film by spatially modulated pulsed Nd:YAG laser beam
DOI:10.1016/j.apsusc.2011.07.111 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Lee, Jinsoo;Kim, Seongsu;Lee, Myeongkyu;
10:108:1 NiOx Schottky-gated ZnO nanowire metal-semiconductor field effect transistor: fast logic inverter and photo-detector
DOI:10.1039/c4tc00266k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Raza, Syed Raza Ali;Shokouh, Seyyed Hossein Hosseini;Lee, Young Tack;Ha, Ryong;Choi, Heon-Jin;Im, Seongil;
10:108:2 ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect
DOI:10.1088/0957-4484/21/11/115205 JN:NANOTECHNOLOGY PY:2010
TC:34 AU: Kim, Joondong;Yun, Ju-Hyung;Kim, Chang Hyun;Park, Yun Chang;Woo, Ju Yeon;Park, Jeunghee;Lee, Jung-Ho;Yi, Junsin;Han, Chang-Soo;
10:108:3 Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric
DOI:10.1021/nl202767h JN:NANO LETTERS PY:2011
TC:32 AU: Kaelblein, Daniel;Weitz, R. Thomas;Boettcher, H. Jens;Ante, Frederik;Zschieschang, Ute;Kern, Klaus;Klauk, Hagen;
10:108:4 Review of hydrothermal ZnO nanowires: Toward FET applications
DOI:10.1116/1.4821801 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:1 AU: Burke-Govey, Conor P.;Plank, Natalie O. V.;
10:108:5 Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
DOI:10.1002/adma.201201051 JN:ADVANCED MATERIALS PY:2012
TC:15 AU: Lee, Young Tack;Jeon, Pyo Jin;Lee, Kwang H.;Ha, Ryong;Choi, Heon-Jin;Im, Seongil;
10:108:6 Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth
DOI:10.1088/0957-4484/23/34/344009 JN:NANOTECHNOLOGY PY:2012
TC:17 AU: Swanwick, Michael E.;Pfaendler, Sieglinde M-L;Akinwande, Akintude I.;Flewitt, Andrew J.;
10:108:7 Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation
DOI:10.1021/nl202239c JN:NANO LETTERS PY:2011
TC:22 AU: Ryu, Boram;Lee, Young Tack;Lee, Kwang H.;Ha, Ryong;Park, Ji Hoon;Choi, Heon-Jin;Im, Seongil;
10:108:8 Investigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode
DOI:10.1063/1.4893944 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Das, Avishek;Palit, Mainak;Paul, Somdatta;Chowdhury, Basudev Nag;Dutta, Himadri Sekhar;Karmakar, Anupam;Chattopadhyay, Sanatan;
10:108:9 High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric
DOI:10.1021/nn501484e JN:ACS NANO PY:2014
TC:4 AU: Kaelblein, Daniel;Ryu, Hyeyeon;Ante, Frederik;Fenk, Bernhard;Hahn, Kersten;Kern, Klaus;Klauk, Hagen;
10:108:10 Annealing-induced conductivity transition in ZnO nanowires for field-effect devices
DOI:10.1063/1.4739520 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Jeon, Pyo Jin;Lee, Young Tack;Ha, Ryong;Choi, Heon-Jin;Yoon, Kwan Hyuck;Sung, Myung M.;Im, Seongil;
10:108:11 ZnO nanowire and mesowire for logic inverter fabrication
DOI:10.1063/1.3492837 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Lee, Young Tack;Im, Seongil;Ha, Ryong;Choi, Heon-Jin;
10:108:12 ZnO nanowire transistor inverter using top-gate electrodes with different work functions
DOI:10.1063/1.3651753 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Lee, Young Tack;Kim, Jong Keun;Ha, Ryong;Choi, Heon-Jin;Im, Seongil;
10:108:13 Photoresponse of hydrothermally grown lateral ZnO nanowires
DOI:10.1016/j.tsf.2010.04.104 JN:THIN SOLID FILMS PY:2010
TC:20 AU: Yang, Po-Yu;Wang, Jyh-Liang;Tsai, Wei-Chih;Wang, Shui-Jinn;Lin, Jia-Chuan;Lee, I-Che;Chang, Chia-Tsung;Cheng, Huang-Chung;
10:108:14 A Comparison of ZnO Nanowires and Nanorods Grown Using MOCVD and Hydrothermal Processes
DOI:10.1007/s11664-012-2444-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:7 AU: Rivera, Abdiel;Zeller, John;Sood, Ashok;Anwar, Mehdi;
10:108:15 Unipolar Sequential Circuits Based on Individual-Carbon-Nanotube Transistors and Thin-Film Carbon Resistors
DOI:10.1021/nn202486v JN:ACS NANO PY:2011
TC:3 AU: Ryu, Hyeyeon;Kaelblein, Daniel;Schmidt, Oliver G.;Klauk, Hagen;
10:108:16 Manipulating ZnO nanowires for field-effect device integration by optical-fiber grip coated with thermoplastic copolymer
DOI:10.1039/c3tc31303d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Jeon, Pyo Jin;Lee, Sejin;Lee, Young Tack;Lee, Hee Sung;Oh, Kyunghwan;Im, Seongil;
10:108:17 Enhanced fabrication process of zinc oxide nanowires for optoelectronics
DOI:10.1016/j.tsf.2013.12.011 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Garcia Nunez, C.;Pau, J. L.;Ruiz, E.;Garcia Marin, A.;Garcia, B. J.;Piqueras, J.;Shen, G.;Wilbert, D. S.;Kim, S. M.;Kung, P.;
10:109:1 Microstructural, Optical, and Electrical Properties of SnO Thin Films Prepared on Quartz via a Two-Step Method
DOI:10.1021/am900838z JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:51 AU: Liang, Ling Yan;Liu, Zhi Min;Cao, Hong Tao;Pan, Xiao Qin;
10:109:2 Microstructure, optical, and electrical properties of p-type SnO thin films
DOI:10.1063/1.3277153 JN:APPLIED PHYSICS LETTERS PY:2010
TC:48 AU: Guo, W.;Fu, L.;Zhang, Y.;Zhang, K.;Liang, L. Y.;Liu, Z. M.;Cao, H. T.;Pan, X. Q.;
10:109:3 Structural, Chemical, Optical, and Electrical Evolution of SnOx Films Deposited by Reactive rf Magnetron Sputtering
DOI:10.1021/am301601s JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:16 AU: Luo, Hao;Liang, Ling Yan;Cao, Hong Tao;Liu, Zhi Min;Zhuge, Fei;
10:109:4 Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities
DOI:10.1063/1.4731271 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Liang, Ling Yan;Cao, Hong Tao;Chen, Xiao Bo;Liu, Zhi Min;Fei Zhuge;Luo, Hao;Li, Jun;Lu, Yi Cheng;Lu, Wei;
10:109:5 Low temperature and self-catalytic growth of tetragonal SnO nanobranch
DOI:10.1016/j.matlet.2010.02.028 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Shin, Jeong Ho;Song, Jae Yong;Kim, Young Heon;Park, Hyun Min;
10:109:6 Facile synthesis of self-assembled SnO nano-square sheets and hydrogen absorption characteristics
DOI:10.1016/j.materresbull.2012.07.002 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:14 AU: Iqbal, M. Zubair;Wang, Fengping;Feng, Ting;Zhao, Hailei;Rafique, M. Yasir;Din, Rafi Ud;Farooq, M. Hassan;Javed, Qurat ul Ain;Khan, Dil Faraz;
10:109:7 Synthesis and Applications of SnO Nanosheets: Parallel Control of Oxidation State and Nanostructure Through an Aqueous Solution Route
DOI:10.1002/smll.200902207 JN:SMALL PY:2010
TC:40 AU: Sakaushi, Ken;Oaki, Yuya;Uchiyama, Hiroaki;Hosono, Eiji;Zhou, Haoshen;Imai, Hiroaki;
10:109:8 Preparation, characterization and optical properties of tin monoxide micro-nano structure via hydrothermal synthesis
DOI:10.1016/j.matlet.2011.11.023 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Iqbal, M. Zubair;Wang, Fengping;Rafi-ud-din;Javed, Qurat-ul-ain;Rafique, M. Yasir;Li, Yan;Li, Pengfei;
10:109:9 Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by Using Al2O3 Capping Layer
DOI:10.1021/am100236s JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:13 AU: Liang, Ling Yan;Liu, Zhi Min;Cao, Hong Tao;Shi, Yuan Yuan;Sun, Xi Lian;Yu, Zheng;Chen, Ai Hua;Zhang, Hai Zhong;Fang, Yan Qun;
10:109:10 Synthesis of novel nano-flowers assembled with nano-petals array of stannous oxide
DOI:10.1016/j.matlet.2012.01.126 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Iqbal, M. Zubair;Wang, Fengping;Javed, Qurat-ul-ain;Rafique, M. Yasir;Qiu, Hongmei;Nabi, Ghulam;
10:109:11 Solvothermal synthesis and characterization of ultrathin SnO nanosheets
DOI:10.1016/j.matlet.2013.12.048 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Sun, Guang;Qi, Fengxiao;Li, Yanwei;Wu, Naiteng;Cao, Jianliang;Zhang, Saisai;Wang, Xiaodong;Yi, Guiyun;Bala, Hari;Zhang, Zhanying;
10:109:12 Structural and electrochemical properties of SnO nanoflowers as an anode material for lithium ion batteries
DOI:10.1016/j.scriptamat.2012.07.010 JN:SCRIPTA MATERIALIA PY:2012
TC:12 AU: Iqbal, M. Zubair;Wang, Fengping;Zhao, Hailei;Rafique, M. Yasir;Wang, Jie;Li, Quanshui;
10:109:13 Fast synthesis and optical property of SnO nanoparticles from choline chloride-based ionic liquid
DOI:10.1007/s11051-014-2288-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:3 AU: Zheng, Hui;Gu, Chang-Dong;Wang, Xiu-Li;Tu, Jiang-Ping;
10:109:14 Synthesis and characterization of SnO with controlled flowerlike microstructures
DOI:10.1016/j.matlet.2013.07.016 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Liang, Ying;Zheng, Huiwen;Fang, Bin;
10:109:15 Room-temperature synthesis, photoluminescence and photocatalytic properties of SnO nanosheet-based flowerlike architectures
DOI:10.1007/s00339-012-6760-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Liu, Bin;Ma, Junhu;Zhao, Hua;Chen, Yan;Yang, Heqing;
10:109:16 Nitrogen doped p-type SnO thin films deposited via sputtering
DOI:10.1016/j.mseb.2012.01.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:4 AU: Kim, Y.;Jang, J. H.;Kim, J. S.;Kim, S. D.;Kim, S. E.;
10:109:17 Effect of radio frequency power on the properties of p-type SnO deposited via sputtering
DOI:10.1016/j.mssp.2013.03.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Um, Joseph;Roh, Byeong-Min;Kim, Sungdong;Kim, Sarah Eunkyung;
10:109:18 Optical absorption spectra of P-type Tin monoxide thin films around their indirect fundamental gaps determined using photothermal deflection spectroscopy
DOI:10.1016/j.tsf.2013.05.141 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Toyama, Toshihiko;Seo, Yuichi;Konishi, Takafumi;Okamoto, Hiroaki;Morimoto, Ryohei;Nishikawa, Yuichi;Tsutsumi, Yasuo;
10:109:19 Synthesis of novel clinopinacoid structure of stannous oxide and hydrogen absorption characteristics
DOI:10.1016/j.matlet.2012.03.056 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Iqbal, M. Zubair;Wang, Fengping;Rafi-ud-Din;Rafique, M. Yasir;Javed, Qurat-ul-ain;Ullah, Asad;Qiu, Hongmei;
10:109:20 Hydrothermal synthesis of honeycomb-like SnO hierarchical microstructures assembled with nanosheets
DOI:10.1016/j.matlet.2013.02.028 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Sun, Guang;Wu, Naiteng;Li, Yanwei;Cao, Jianliang;Qi, Fengxiao;Bala, Hari;Zhang, Zhanying;
10:109:21 Influence of magnesium doping on the structural and optical properties of tin (II) oxide thin films deposited by electron beam evaporation
DOI:10.1016/j.mssp.2013.01.017 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Ali, Syed Mansoor;Hussain, Syed Tajammul;Muhammad, Jan;Ashraf, M.;Farooq, Aslam;Imran, M.;Abu Bakar, Shahzad;
10:109:22 Oxidation of SnO to SnO2 thin films in boiling water at atmospheric pressure
DOI:10.1063/1.4867654 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nose, K.;Suzuki, A. Y.;Oda, N.;Kamiko, M.;Mitsuda, Y.;
10:109:23 Epitaxial growth of tin(II) niobate with a pyrochlore structure
DOI:10.1016/j.jcrysgro.2015.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Katayama, Shota;Ogawa, Yusuke;Hayashi, Hiroyuki;Oba, Fumiyasu;Tanaka, Isao;
10:110:1 Effects of mineralizing agent on the morphologies and photoluminescence properties of Eu3+-doped ZnO nanomaterials
DOI:10.1016/j.jallcom.2011.08.021 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Yang, Jinghai;Li, Xue;Lang, Jihui;Yang, Lili;Gao, Ming;Liu, Xiaoyan;Wei, Maobin;Liu, Yang;Wang, Rui;
10:110:2 Tunable deep-level emission in ZnO nanoparticles via yttrium doping
DOI:10.1016/j.jallcom.2010.12.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:23 AU: Yang, Jinghai;Wang, Rui;Yang, Lili;Lang, Jihui;Wei, Maobin;Gao, Ming;Liu, Xiaoyan;Cao, Jian;Li, Xue;Yang, Nannan;
10:110:3 Effect of pH on ZnO nanoparticle properties synthesized by sol-gel centrifugation
DOI:10.1016/j.jallcom.2010.03.174 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:35 AU: Alias, S. S.;Ismail, A. B.;Mohamad, A. A.;
10:110:4 An optimization study on the leaching of zinc cathode melting furnace slag in ammonium chloride by Taguchi design and synthesis of ZnO nanorods via precipitation methods
DOI:10.1016/j.materresbull.2013.06.077 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:0 AU: Babaei-Dehkordi, Amin;Moghaddam, Javad;Mostafaei, Amir;
10:110:5 Effects of Y contents on surface, structural, optical, and electrical properties for Y-doped ZnO thin films
DOI:10.1016/j.tsf.2014.02.025 JN:THIN SOLID FILMS PY:2014
TC:11 AU: Heo, Sungeun;Sharma, Sanjeev K.;Lee, Sejoon;Lee, Youngmin;Kim, Changmin;Lee, Byungho;Lee, Hwangho;Kim, Deuk Young;
10:110:6 Fabrication and optical properties of Ce-doped ZnO nanorods
DOI:10.1063/1.3318613 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:28 AU: Lang, Jihui;Han, Qiang;Yang, Jinghai;Li, Changsheng;Li, Xue;Yang, Lili;Zhang, Yongjun;Gao, Ming;Wang, Dandan;Cao, Jian;
10:110:7 Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer
DOI:10.1063/1.3294635 JN:APPLIED PHYSICS LETTERS PY:2010
TC:22 AU: Lee, Sejoon;Shon, Yoon;Kim, Deuk Young;Kang, Tae Won;Yoon, Chong S.;
10:110:8 Rapid synthesis and luminescence of the Eu3+, Er3+ codoped ZnO quantum-dot chain via chemical precipitation method
DOI:10.1016/j.apsusc.2011.06.067 JN:APPLIED SURFACE SCIENCE PY:2011
TC:11 AU: Lang, Jihui;Li, Xue;Yang, Jinghai;Yang, Lili;Zhang, Yongjun;Yan, Yongsheng;Han, Qiang;Wei, Maobin;Gao, Ming;Liu, Xiaoyan;Wang, Rui;
10:110:9 Formation and characterization of ZnO nanopowder synthesized by sol-gel method
DOI:10.1016/j.jallcom.2010.02.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:28 AU: Azam, Ameer;Ahmed, Faheem;Arshi, Nishat;Chaman, M.;Naqvi, A. H.;
10:110:10 Influence of Yttrium on optical, structural and photoluminescence properties of ZnO nanopowders by sol-gel method
DOI:10.1016/j.optmat.2013.06.009 JN:OPTICAL MATERIALS PY:2013
TC:9 AU: Anandan, S.;Muthukumaran, S.;
10:110:11 Structural and optical properties of ZnO nanoparticles synthesized at different pH values
DOI:10.1016/j.jallcom.2012.05.104 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:12 AU: Chand, Prakash;Gaur, Anurag;Kumar, Ashavani;
10:110:12 Enhanced UV emission of Y-doped ZnO nanoparticles
DOI:10.1016/j.apsusc.2012.03.010 JN:APPLIED SURFACE SCIENCE PY:2012
TC:17 AU: Zheng, J. H.;Song, J. L.;Jiang, Q.;Lian, J. S.;
10:110:13 Synthesis and optical properties of Eu-doped ZnO nanosheets by hydrothermal method
DOI:10.1016/j.mssp.2011.04.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:18 AU: Yang, Jinghai;Li, Xue;Lang, Jihui;Yang, Lili;Wei, Maobin;Gao, Ming;Liu, Xiaoyan;Zhai, Hongju;Wang, Rui;Liu, Yang;Cao, Jian;
10:110:14 Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals
DOI:10.1063/1.3507894 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Lee, Sejoon;Lee, Youngmin;Shon, Yoon;Kim, Deuk Young;Kang, Tae Won;
10:110:15 Quantum cutting effect and photoluminescence emission at about 1,000 nm from Er-Yb co-doped ZnO nanoplates prepared by wet chemical precipitation method
DOI:10.1007/s00339-014-8664-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Zamiri, Reza;Rebelo, Avito;Poor, Hamid Reza Bahari;Ferreira, J. M. F.;
10:110:16 Optimization of the sputtering process parameters of GZO films using the Grey Taguchi method
DOI:10.1016/j.ceramint.2009.11.019 JN:CERAMICS INTERNATIONAL PY:2010
TC:14 AU: Chen, Chien-Chih;Tsao, Chung-Chen;Lin, You-Chiuan;Hsu, Chun-Yao;
10:110:17 Optimization of experimental parameters based on the Taguchi robust design for the formation of zinc oxide nanocrystals by solvothermal method
DOI:10.1016/j.materresbull.2011.02.004 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:6 AU: Yiamsawas, Doungporn;Boonpavanitchakul, Kanittha;Kangwansupamonkon, Wiyong;
10:110:18 Controlled Synthesis of ZnO Nanostructures by Electrodeposition Method
DOI:10.1155/2010/740628 JN:JOURNAL OF NANOMATERIALS PY:2010
TC:2 AU: Gong Jiangfeng;Dou Zhaoming;Ding Qingping;Xu Yuan;Zhu Weihua;
10:111:1 Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing
DOI:10.1021/am506298y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Bayati, R.;Molaeil, R.;Richmond, A.;Nori, S.;Wu, F.;Kumar, D.;Narayan, J.;Reynolds, J. G.;Reynolds, C. L., Jr.;
10:111:2 Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation
DOI:10.1063/1.4790327 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:11 AU: Bayati, M. R.;Joshi, S.;Molaei, R.;Narayan, R. J.;Narayan, J.;
10:111:3 Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation
DOI:10.1063/1.3671412 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:21 AU: Gupta, Pranav;Dutta, Titas;Mal, Siddhartha;Narayan, Jagdish;
10:111:4 Laser annealing induced ferromagnetism in SrTiO3 single crystal
DOI:10.1063/1.4891184 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Rao, S. S.;Lee, Y. F.;Prater, J. T.;Smirnov, A. I.;Narayan, J.;
10:111:5 Controlled epitaxial integration of polar ZnO(0001) with Si(001)
DOI:10.1063/1.4795126 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Molaei, R.;Bayati, M. R.;Alipour, H. M.;Narayan, J.;
10:111:6 Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment
DOI:10.1063/1.4811540 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Molaei, R.;Bayati, M. R.;Alipour, H. M.;Nori, S.;Narayan, J.;
10:111:7 Occurrence of Rotation Domains in Heteroepitaxy
DOI:10.1103/PhysRevLett.105.146102 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:17 AU: Grundmann, Marius;Boentgen, Tammo;Lorenz, Michael;
10:111:8 Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment
DOI:10.1063/1.4857155 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Molaei, R.;Bayati, R.;Nori, S.;Kumar, D.;Prater, J. T.;Narayan, J.;
10:111:9 Photocatalytic activity and formation of oxygen vacancies in cation doped anatase TiO2 nanoparticles
DOI:10.1016/j.ceramint.2014.02.114 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Gharagozlou, Mehrnaz;Bayati, R.;
10:111:10 Defect-mediated ferromagnetism and controlled switching characteristics in ZnO
DOI:10.1557/jmr.2011.74 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:12 AU: Mal, Siddhartha;Nori, Sudhakar;Narayan, Jagdish;Prater, John T.;
10:111:11 Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(001) substrates
DOI:10.1016/j.actamat.2010.12.058 JN:ACTA MATERIALIA PY:2011
TC:10 AU: Mal, Siddhartha;Yang, Tsung-Han;Gupta, P.;Prater, J. T.;Narayan, J.;
10:111:12 Ferroelectric and ferromagnetic properties in BaTiO3 thin films on Si (100)
DOI:10.1063/1.4894508 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Singamaneni, Srinivasa Rao;Punugupati, Sandhyarani;Prater, John T.;Hunte, Frank;Narayan, Jagdish;
10:111:13 Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties
DOI:10.1063/1.3406260 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Aggarwal, Ravi;Zhou, Honghui;Jin, Chunming;Narayan, J.;Narayan, Roger J.;
10:111:14 Coincident site lattice-matched InGaN on (111) spinel substrates
DOI:10.1063/1.3702577 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Norman, A. G.;Dippo, P. C.;Moutinho, H. R.;Simon, J.;Ptak, A. J.;
10:111:15 Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(0 0 1) substrates (vol 59, pg 2526, 2011)
DOI:10.1016/j.actamat.2011.08.010 JN:ACTA MATERIALIA PY:2012
TC:1 AU: Mal, Siddhartha;Yang, Tsung-Han;Gupta, P.;Prater, J. T.;Narayan, J.;
10:111:16 High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy
DOI:10.1063/1.4769082 JN:AIP ADVANCES PY:2012
TC:3 AU: Uchida, Kazuo;Yoshida, Ken-ichi;Zhang, Dongyuan;Koizumi, Atsushi;Nozaki, Shinji;
10:111:17 ZnO epitaxy on SiC(000(1)over-bar) substrate: Comparison with ZnO/SiC(0001) heterostructure
DOI:10.1016/j.apsusc.2011.02.029 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Ashrafi, Almamun;Aminuzzaman, Mohammod;
10:111:18 Fabrication of metallic micro/nano-particles by surface patterning and pulsed laser annealing
DOI:10.1016/j.tsf.2010.01.034 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Chen, Chun-Hung;Lee, Yung-Chun;
10:112:1 Analytical model of electron transport in polycrystalline, degenerately doped ZnO films
DOI:10.1063/1.4896839 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Bikowski, Andre;Ellmer, Klaus;
10:112:2 Microstructural, optical and electrical properties of annealed ZnO:Al thin films
DOI:10.1016/j.tsf.2013.01.077 JN:THIN SOLID FILMS PY:2013
TC:12 AU: Charpentier, C.;Prod'homme, P.;Roca i Cabarrocas, P.;
10:112:3 Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films
DOI:10.1063/1.3456527 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Kim, Dong-Ho;Lee, Sung-Hun;Lee, Gun-Hwan;Kim, Hyun-Bum;Kim, Kwang Ho;Lee, Yoon-Gyu;Yu, Tae-Hwan;
10:112:4 A comparative study of electronic and structural properties of polycrystalline and epitaxial magnetron-sputtered ZnO:Al and Zn1-xMgxO:Al Films-Origin of the grain barrier traps
DOI:10.1063/1.4817376 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Bikowski, Andre;Ellmer, Klaus;
10:112:5 Comparative study on effects of H-2 flux on structure and properties of Al-doped ZnO films by RF sputtering in Ar+H-2 ambient at two substrate temperatures
DOI:10.1016/j.ceramint.2014.04.049 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Zhu, B. L.;Xie, M.;Wang, J.;Shi, X. W.;Wu, J.;Zeng, D. W.;Xie, C. S.;
10:112:6 Influence of hydrogen introduction on structure and properties of ZnO thin films during sputtering and post-annealing
DOI:10.1016/j.tsf.2011.01.187 JN:THIN SOLID FILMS PY:2011
TC:18 AU: Zhu, B. L.;Wang, J.;Zhu, S. J.;Wu, J.;Wu, R.;Zeng, D. W.;Xie, C. S.;
10:112:7 Wide-spectrum Mg and Ga co-doped ZnO-TCO thin films with introduced hydrogen grown by magnetron sputtering at room temperature
DOI:10.1016/j.apsusc.2014.07.079 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Tian, Cong-sheng;Chen, Xin-liang;Liu, Jie-ming;Zhang, De-kun;Wei, Chang-chun;Zhao, Ying;Zhang, Xiao-dan;
10:112:8 Characteristics of Al-doped ZnO thin films prepared in Ar + H-2 atmosphere and their vacuum annealing behavior
DOI:10.1116/1.4823694 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:0 AU: Zhu, Bailin;Lu, Kun;Wang, Jun;Li, Taotao;Wu, Jun;Zeng, Dawen;Xie, Changsheng;
10:112:9 Influence of the deposition temperature on electronic transport and structural properties of radio frequency magnetron-sputtered Zn1-xMgxO:Al and ZnO:Al films
DOI:10.1557/jmr.2012.113 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:10 AU: Bikowski, Andre;Ellmer, Klaus;
10:112:10 Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering
DOI:10.1016/j.apsusc.2012.05.138 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Wang, Fei;Chen, Xin-liang;Geng, Xin-hua;Zhang, De-kun;Wei, Chang-chun;Huang, Qian;Zhang, Xiao-dan;Zhao, Ying;
10:112:11 Effects of thickness and atmospheric annealing on structural, electrical and optical properties of GZO thin films by spray pyrolysis
DOI:10.1016/j.jallcom.2012.05.128 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:19 AU: Rao, T. Prasada;Kumar, M. C. Santhosh;Sooraj Hussain, N.;
10:112:12 Transparent conductive Mg and Ga co-doped ZnO thin films for solar cells grown by magnetron sputtering: H-2 induced changes
DOI:10.1016/j.solmat.2014.02.028 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Tian, Cong-sheng;Chen, Xin-liang;Ni, Jian;Liu, Jie-ming;Zhang, De-Kun;Huang, Qian;Zhao, Ying;Zhang, Xiao-dan;
10:112:13 Electrical transport in hydrogen-aluminium Co-doped ZnO and Zn1-xMgxO films: Relation to film structure and composition
DOI:10.1063/1.4790314 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Bikowski, A.;Ellmer, K.;
10:112:14 Optical constants of hydrogenated zinc oxide thin films
DOI:10.1364/OME.4.002323 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Al-Kuhaili, M. F.;Alade, I. O.;Durrani, S. M. A.;
10:112:15 Conduction model covering non-degenerate through degenerate polycrystalline semiconductors with non-uniform grain-boundary potential heights based on an energy filtering model
DOI:10.1063/1.4770452 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Kajikawa, Y.;
10:112:16 Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature
DOI:10.1063/1.4803667 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Singh, Anil;Chaudhary, Sujeet;Pandya, D. K.;
10:112:17 Structure, luminescence and electrical properties of ZnO thin films annealed in H-2 and H2O ambient: A comparative study
DOI:10.1016/j.tsf.2009.12.099 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Liu, W. W.;Yao, B.;Li, Y. F.;Li, B. H.;Zhang, Z. Z.;Shan, C. X.;Zhao, D. X.;Zhang, J. Y.;Shen, D. Z.;Fan, X. W.;
10:112:18 Analysis of temperature dependence of electrical conductivity in degenerate n-type polycrystalline InAsP films in an energy-filtering model with potential fluctuations at grain boundaries
DOI:10.1063/1.4770417 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Kajikawa, Y.;Okamura, K.;Inoko, Y.;Mizuki, H.;
10:112:19 Effects of grain-boundary potential barrier height and its fluctuation on conductivity of polycrystalline semiconductors in the ionized-impurity-scattering dominated case
DOI:10.1063/1.4816795 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kajikawa, Y.;
10:112:20 Homoepitaxial MgxZn1 (-) O-x (0 <= x <= 0.22) thin films grown by pulsed laser deposition
DOI:10.1016/j.tsf.2009.12.046 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Lorenz, Michael;Brandt, Matthias;Lange, Martin;Benndorf, Gabriele;von Wenckstern, Holger;Klimm, Detlef;Grundmann, Marius;
10:112:21 Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering
DOI:10.1016/j.apsusc.2009.12.047 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Yen, W. T.;Lin, Y. C.;Yao, P. C.;Ke, J. H.;Chen, Y. L.;
10:112:22 Effects of potential barrier height and its fluctuations at grain boundaries on thermoelectric properties of polycrystalline semiconductors
DOI:10.1063/1.4817243 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Kajikawa, Y.;
10:112:23 Electrical properties of polycrystalline GaInAs thin films
DOI:10.1016/j.tsf.2010.07.077 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Kajikawa, Y.;Okuzako, T.;Takami, S.;Takushima, M.;
10:112:24 Effect of annealing on the electrical properties of ZnO crystals grown by chemical vapor transport
DOI:10.1116/1.3565026 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:0 AU: Abe, Koji;Miura, Masaaki;Oiwa, Masanori;
10:112:25 Thickness dependence of electrical properties of polycrystalline GaSbAs thin films grown on glass substrates: Analysis on the basis of a two-band conduction model using a differential Hall-effect method
DOI:10.1016/j.tsf.2013.07.065 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Kajikawa, Y.;Okamura, K.;Okuzako, T.;Matsui, Y.;
10:113:1 Sol-gel preparation and enhanced photocatalytic performance of Cu-doped ZnO nanoparticles
DOI:10.1016/j.apsusc.2011.10.003 JN:APPLIED SURFACE SCIENCE PY:2011
TC:49 AU: Fu, Min;Li, Yalin;Wu, Siwei;Lu, Peng;Liu, Jing;Dong, Fan;
10:113:2 Preparation and photocatalytic activity of Cu-doped ZnO thin films prepared by the sol-gel method
DOI:10.1016/j.apsusc.2012.05.021 JN:APPLIED SURFACE SCIENCE PY:2012
TC:35 AU: Jongnavakit, P.;Amornpitoksuk, P.;Suwanboon, S.;Ndiege, N.;
10:113:3 Structural, optical and magnetic properties of Cr doped ZnO microrods prepared by spray pyrolysis method
DOI:10.1016/j.apsusc.2011.05.017 JN:APPLIED SURFACE SCIENCE PY:2011
TC:32 AU: Yilmaz, S.;Parlak, M.;Ozcan, S.;Altunbas, M.;McGlynn, E.;Bacaksiz, E.;
10:113:4 Enhanced photocatalytic performance of ferromagnetic ZnO:Cu hierarchical microstructures
DOI:10.1016/j.apsusc.2014.01.065 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Liang, Gaofeng;Hu, Lingwei;Feng, Wenpo;Li, Guangda;Jing, Aihua;
10:113:5 Structural, optical and electrical properties of Al-doped ZnO microrods prepared by spray pyrolysis
DOI:10.1016/j.tsf.2009.10.141 JN:THIN SOLID FILMS PY:2010
TC:41 AU: Bacaksiz, Emin;Aksu, Serdar;Yilmaz, Salih;Parlak, Mehmet;Altunbas, Mustafa;
10:113:6 Defect-mediated ferromagnetism in ZnO:Mn nanorods
DOI:10.1007/s00339-013-7817-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Yilmaz, S.;McGlynn, E.;Bacaksiz, E.;Bogan, J.;
10:113:7 Effects of Cu diffusion-doping on structural, optical, and magnetic properties of ZnO nanorod arrays grown by vapor phase transport method
DOI:10.1063/1.3673861 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Yilmaz, S.;McGlynn, E.;Bacaksiz, E.;Ozcan, S.;Byrne, D.;Henry, M. O.;Chellappan, R. K.;
10:113:8 Cu doped ZnO nanoparticle sheets
DOI:10.1016/j.matchemphys.2010.09.021 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:27 AU: Wang, Ruey-Chi;Lin, Hsin-Ying;
10:113:9 Structural, optical and magnetic properties of Zn1-xMnxO micro-rod arrays synthesized by spray pyrolysis method
DOI:10.1016/j.tsf.2012.04.002 JN:THIN SOLID FILMS PY:2012
TC:13 AU: Yilmaz, S.;Bacaksiz, E.;McGlynn, E.;Polat, I.;Ozcan, S.;
10:113:10 The influence of Cu-doping on structural, optical and photocatalytic properties of ZnO nanorods
DOI:10.1016/j.matchemphys.2014.07.011 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Polat, Ismail;Yilmaz, Salih;Altin, Ilknur;Bacaksiz, Emin;Sokmen, Munevver;
10:113:11 Effect of open air annealing on spin coated aluminum doped ZnO nanostructure
DOI:10.1016/j.matchemphys.2013.04.027 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:9 AU: Shelke, Vrushali;Bhole, M. P.;Patil, D. S.;
10:113:12 Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions
DOI:10.1016/j.mseb.2012.03.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:7 AU: Yilmaz, Salih;Polat, Ismail;Altindal, Semsettin;Bacaksiz, Emin;
10:113:13 Structural and Magnetic properties of Cr-diffused CdTe nanocrystalline thin films deposited by electron beam evaporation
DOI:10.1007/s00339-014-8672-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Begam, M. Rigana;Rao, N. Madhusudhana;Kaleemulla, S.;Krishnamoorthi, C.;Krishna, N. Sai;Kuppan, M.;
10:113:14 Structural and photoluminescent properties of Ni doped ZnO nanorod arrays prepared by hydrothermal method
DOI:10.1016/j.apsusc.2011.02.074 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Liu Yanmei;Wang Tao;Sun Xia;Fang Qingqing;Lv Qingrong;Song Xueping;Sun Zaoqi;
10:113:15 Photodegradation of methylene blue of niobium-doped zinc oxide thin films produced by electrostatic spray deposition
DOI:10.1016/j.ceramint.2013.11.041 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Yoon, Hyun;Joshi, Bhavana N.;Na, Seung-Heon;Choi, Jae-Young;Yoon, Sam S.;
10:113:16 Properties of low-temperature deposited ZnO thin films prepared by cathodic vacuum arc technology on different flexible substrates
DOI:10.1016/j.tsf.2013.05.021 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Pan, Cheng-Tang;Yang, Ru-Yuan;Weng, Min-Hang;Huang, Chien-Wei;
10:114:1 Effect of aging time of ZnO sol on the structural and optical properties of ZnO thin films prepared by sol-gel method
DOI:10.1016/j.apsusc.2010.02.044 JN:APPLIED SURFACE SCIENCE PY:2010
TC:58 AU: Li, Yaoming;Xu, Linhua;Li, Xiangyin;Shen, Xingquan;Wang, Ailing;
10:114:2 Dependence of structural and optical properties of sol-gel derived ZnO thin films on sol concentration
DOI:10.1016/j.apsusc.2012.04.137 JN:APPLIED SURFACE SCIENCE PY:2012
TC:27 AU: Xu, Linhua;Zheng, Gaige;Miao, Juhong;Xian, Fenglin;
10:114:3 Correlated effects of preparation parameters and thickness on morphology and optical properties of ZnO very thin films
DOI:10.1016/j.jcrysgro.2015.04.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Gilliot, Mickael;Hadjadj, Aomar;
10:114:4 Influence of annealing temperature on the structural, topographical and optical properties of sol-gel derived ZnO thin films
DOI:10.1016/j.matlet.2011.06.021 JN:MATERIALS LETTERS PY:2011
TC:31 AU: Sengupta, Joydip;Sahoo, R. K.;Bardhan, K. K.;Mukherjee, C. D.;
10:114:5 Effects of annealing temperature on ZnO and AZO films prepared by sol-gel technique
DOI:10.1016/j.apsusc.2012.05.156 JN:APPLIED SURFACE SCIENCE PY:2012
TC:21 AU: Ng, Zi-Neng;Chan, Kah-Yoong;Tohsophon, Thanaporn;
10:114:6 Direct current magnetron sputter-deposited ZnO thin films
DOI:10.1016/j.apsusc.2010.10.012 JN:APPLIED SURFACE SCIENCE PY:2011
TC:18 AU: Hoon, Jian-Wei;Chan, Kah-Yoong;Krishnasamy, Jegenathan;Tou, Teck-Yong;Knipp, Dietmar;
10:114:7 Structural and optical characteristics of spin-coated ZnO thin films
DOI:10.1016/j.apsusc.2009.10.075 JN:APPLIED SURFACE SCIENCE PY:2010
TC:28 AU: Smirnov, M.;Baban, C.;Rusu, G. I.;
10:114:8 Nanocrystalline ZnO thin films by spin coating-pyrolysis method
DOI:10.1016/j.jallcom.2009.10.153 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Sahoo, Trilochan;Kim, Myoung;Lee, Mi-Hee;Jang, Lee-Woon;Jeon, Ju-Won;Kwak, Joon Seop;Ko, In-Yong;Lee, In-Hwan;
10:114:9 Zinc oxide films prepared by sol-gel spin coating technique
DOI:10.1007/s00339-010-6121-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:21 AU: Kamaruddin, Sharul Ashikin;Chan, Kah-Yoong;Yow, Ho-Kwang;Sahdan, Mohd Zainizan;Saim, Hashim;Knipp, Dietmar;
10:114:10 Influence of post-annealing condition on the properties of ZnO films
DOI:10.1016/j.ceramint.2012.10.074 JN:CERAMICS INTERNATIONAL PY:2013
TC:4 AU: Ng, Zi-Neng;Chan, Kah-Yoong;Sin, Yew-Keong;Hoon, Jian-Wei;Ng, Sha-Shiong;
10:114:11 Effect of different solvents on the structural and optical properties of zinc oxide thin films for optoelectronic applications
DOI:10.1016/j.ceramint.2013.06.065 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Foo, K. L.;Kashif, M.;Hashirn, U.;Liu, Wei-Wen;
10:114:12 Zinc oxide films deposited by radio frequency plasma magnetron sputtering technique
DOI:10.1016/j.ceramint.2012.10.075 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Hoon, Jian-Wei;Chan, Kah-Yoong;Tou, Teck-Yong;
10:114:13 Effect of aging time on the optical, structural and photoluminescence properties of nanocrystalline ZnO films prepared by a sol-gel method
DOI:10.1016/j.apsusc.2013.06.155 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Ibrahim, N. B.;AL-Shomar, S. M.;Ahmad, Sahrim Hj.;
10:114:14 Errors in inversion of ellipsometric equations for transparent films
DOI:10.1016/j.tsf.2013.06.088 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Gilliot, Mickael;
10:114:15 Hierarchical ZnO nanorod electrodes: Effect of post annealing on structural and photoelectrochemical performance
DOI:10.1016/j.matlet.2012.11.100 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Bhatti, Ijaz Ahmad;Peiris, T. A. Nirmal;Smith, Thomas D.;Wijayantha, K. G. Upul;
10:114:16 Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p-n hetero junction
DOI:10.1016/j.mseb.2013.04.007 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:7 AU: Sanal, K. C.;Jayaraj, M. K.;
10:114:17 Extraction of complex refractive index of absorbing films from ellipsometry measurement
DOI:10.1016/j.tsf.2012.04.047 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Gilliot, Mickael;
10:114:18 Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication
DOI:10.1063/1.3641638 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Lee, Eunju;Zhang, Ruirui;Yoon, Giwan;
10:114:19 Dielectric function of sol-gel prepared nano-granular zinc oxide by spectroscopic ellipsometry
DOI:10.1063/1.4830012 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Gilliot, Mickael;Eypert, Celine;Hadjadj, Aomar;
10:114:20 Effect of Surfactant Concentration Variation on the Thermoelectric Properties of Mesoporous ZnO
DOI:10.1155/2013/172504 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Hong, Min-Hee;Park, Chang-Sun;Shin, Sangwoo;Cho, Hyung Hee;Seo, Won-Seon;Lim, Young Soo;Lee, Jung-Kun;Park, Hyung-Ho;
10:114:21 Thermoelectric Properties of Al-Doped Mesoporous ZnO Thin Films
DOI:10.1155/2013/131537 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Hong, Min-Hee;Park, Chang-Sun;Seo, Won-Seon;Lim, Young Soo;Lee, Jung-Kun;Park, Hyung-Ho;
10:114:22 Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures
DOI:10.1016/j.tsf.2010.03.091 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Hezam, M.;Tabet, N.;Mekki, A.;
10:114:23 Effect of adding aluminum ion on the structural, optical, electrical and magnetic properties of terbium doped yttrium iron garnet nanoparticles films prepared by sol-gel method
DOI:10.1016/j.apsusc.2014.10.019 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Aldbea, Ftema W.;Ibrahim, N. B.;Yahya, M.;
10:114:24 Amorphous phase as possible origin of additional absorption bands in polycrystalline ZnO films
DOI:10.1016/j.jnoncrysol.2012.08.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Mera, J.;Cordoba, C.;Gomez, A.;Paucar, C.;Moran, O.;
10:115:1 Facile synthesis of highly oriented p-type aluminum co-doped zinc oxide film with aqua ammonia
DOI:10.1016/j.jallcom.2010.11.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:19 AU: Bu, Ian Y. Y.;
10:115:2 Effects of sulfidation on the optoelectronic properties of hydrothermally synthesized ZnO nanowires
DOI:10.1016/j.ceramint.2012.01.038 JN:CERAMICS INTERNATIONAL PY:2012
TC:17 AU: Bu, Ian Y. Y.;Yeh, Yih-Min;
10:115:3 Effects of the pre-annealing temperature on structural and optical properties of sol-gel deposited aluminium doped zinc oxide
DOI:10.1016/j.ceramint.2014.04.030 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Bu, Ian Y. Y.;
10:115:4 Effect of a ZnO buffer layer on the properties of epitaxial ZnO: Ga films deposited on c-sapphire substrate
DOI:10.1016/j.jallcom.2014.02.062 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Zhang, Zhiyun;Bao, Chonggao;Yi, Dawei;Yang, Bo;Li, Qun;Hou, Shuzeng;Han, Z. H.;
10:115:5 Optoelectronic properties of solution synthesis of carbon nanotube/ZnO:Al:N nanocomposite and its potential as a photocatalyst
DOI:10.1016/j.mssp.2014.01.043 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Bu, Ian Y. Y.;
10:115:6 Effect of NH4OH concentration on p-type doped ZnO film by solution based process
DOI:10.1016/j.apsusc.2011.02.011 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Bu, Ian Y. Y.;
10:115:7 A highly conductive and transparent solution processed AZO/MWCNT nanocomposite
DOI:10.1016/j.ceramint.2013.06.109 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Bu, Ian Y. Y.;Cole, Matthew T.;
10:115:8 Optoelectronic properties of ZnO nanowires deposited under different zinc nitrate/hexamine ratio concentrations
DOI:10.1016/j.ceramint.2013.11.038 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Bu, Ian Y. Y.;
10:115:9 Hierarchical ZnO microrods: synthesis, structure, optical and photocatalytic properties
DOI:10.1007/s00339-011-6452-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:11 AU: Yang, Yongqiang;Du, Gaohui;Xin, Xin;Xu, Bingshe;
10:115:10 Novel all solution processed heterojunction using p-type cupric oxide and n-type zinc oxide nanowires for solar cell applications
DOI:10.1016/j.ceramint.2013.03.079 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Bu, Ian Y. Y.;
10:115:11 Sol-gel production of wrinkled fluorine doped zinc oxide through hydrofluride acid
DOI:10.1016/j.ceramint.2014.06.043 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Bu, Ian Y. Y.;
10:115:12 Novel fabrication process for flexible dye sensitized solar cell using aluminum doped zinc oxide
DOI:10.1016/j.mssp.2013.07.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Bu, Ian Y. Y.;
10:115:13 Sol-gel production of aluminium doped zinc oxide using aluminium nitrate
DOI:10.1016/j.mssp.2014.06.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Bu, Ian Y. Y.;
10:115:14 Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine
DOI:10.1016/j.apsusc.2010.03.076 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Kim, Y. H.;Jeong, J.;Lee, K. S.;Park, J. K.;Baik, Y. J.;Seong, T. -Y.;Kim, W. M.;
10:115:15 Synthesis of a zinc oxide nanosheet-nanowire network complex by a low-temperature chemical route: Efficient UV detection and field emission property
DOI:10.1016/j.scriptamat.2009.11.026 JN:SCRIPTA MATERIALIA PY:2010
TC:15 AU: Maiti, U. N.;Chattopadhyay, K. K.;Karan, S.;Mallik, B.;
10:115:16 Deposition and properties of B-N codoped p-type ZnO thin films by RF magnetron sputtering
DOI:10.1016/j.apsusc.2009.11.017 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Sui, Y. R.;Yao, B.;Yang, J. H.;Cui, H. F.;Huang, X. M.;Yang, T.;Gao, L. L.;Deng, R.;Shen, D. Z.;
10:115:17 Photocatalytic performance of rice grain shaped ZnO microrods under solar irradiation
DOI:10.1016/j.matlet.2014.04.113 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Madhusudana, Gopannagari;Kumar, Puttapati Sampath;Kumar, Dharani Praveen;Srikanth, Vadali V. S. S.;Shankar, Muthukonda V.;
10:115:18 Effect of solvents and stabilizers on sol-gel deposition of Ga-doped zinc oxide TCO films
DOI:10.1557/jmr.2011.69 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:6 AU: Winer, Ido;Shter, Gennady E.;Mann-Lahav, Meirav;Grader, Gideon S.;
10:115:19 Fluorine doped zinc oxide thin films deposited by chemical spray, starting from zinc pentanedionate and hydrofluoric acid: Effect of the aging time of the solution
DOI:10.1016/j.mseb.2010.03.013 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:22 AU: Biswal, R. R.;Velumani, S.;Babu, B. J.;Maldonado, A.;Tirado-Guerra, S.;Castaneda, L.;Olvera, M. de la L.;
10:115:20 Raman and highly ultraviolet red-shifted near band edge properties of LaCe-co-doped ZnO nanoparticles (vol 57, pg 4790, 2009)
DOI:10.1016/j.actamat.2009.10.009 JN:ACTA MATERIALIA PY:2010
TC:1 AU: Iqbal, Javed;Liu, Xiaofang;Zhu, Huichao;Wu, Z. B.;Zhang, Yong;Yu, Dapeng;Yu, Ronghai;
10:115:21 Fabrication of transparent p-n junction diode based on oxide semiconductors deposited by RF magnetron sputtering
DOI:10.1016/j.ceramint.2011.05.111 JN:CERAMICS INTERNATIONAL PY:2012
TC:2 AU: Kim, Seiki;Seok, Hyewon;Lee, Hyunseok;Lee, Mijae;Choi, Duckkyun;Chai, Kyounghoon;
10:116:1 Single-Crystalline Rutile TiO2 Hollow Spheres: Room-Temperature Synthesis, Tailored Visible-Light-Extinction, and Effective Scattering Layer for Quantum Dot-Sensitized Solar Cells
DOI:10.1021/ja2049463 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:69 AU: Wang, Hongqiang;Miyauchi, Masahiro;Ishikawa, Yoshie;Pyatenko, Alexander;Koshizaki, Naoto;Li, Yue;Li, Liang;Li, Xiangyou;Bando, Yoshio;Golberg, Dmitri;
10:116:2 Size-Tailored ZnO Submicrometer Spheres: Bottom-Up Construction, Size-Related Optical Extinction, and Selective Aniline Trapping
DOI:10.1002/adma.201100078 JN:ADVANCED MATERIALS PY:2011
TC:45 AU: Wang, Hongqiang;Koshizaki, Naoto;Li, Liang;Jia, Lichao;Kawaguchi, Kenji;Li, Xiangyou;Pyatenko, Alexander;Swiatkowska-Warkocka, Zaneta;Bando, Yoshio;Golberg, Dmitri;
10:116:3 Laser-induced reshaping of particles aiming at energy-saving applications
DOI:10.1039/c2jm32041j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:8 AU: Hu, Xilun;Gong, Haibo;Wang, Yingzi;Chen, Qiang;Zhang, Jun;Zheng, Shaohua;Yang, Shikuan;Cao, Bingqiang;
10:116:4 Highly Enhanced Acetone Sensing Performances of Porous and Single Crystalline ZnO Nanosheets: High Percentage of Exposed (100) Facets Working Together with Surface Modification with Pd Nanoparticles
DOI:10.1021/am3010303 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:41 AU: Xiao, Yuanhua;Lu, Lingzhen;Zhang, Aiqin;Zhang, Yonghui;Sun, Li;Huo, Lei;Li, Feng;
10:116:5 ZnO Twin-Spheres Exposed in +/-(001) Facets: Stepwise Self-Assembly Growth and Anisotropic Blue Emission
DOI:10.1021/nn404591z JN:ACS NANO PY:2013
TC:12 AU: Li, Feng;Gong, Feilong;Xiao, Yuanhua;Zhang, Aiqin;Zhao, Jihong;Fang, Shaoming;Jia, Dianzeng;
10:116:6 Single-Crystalline ZnO Spherical Particles by Pulsed Laser Irradiation of Colloidal Nanoparticles for Ultraviolet Photodetection
DOI:10.1021/am500443a JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Wang, H.;Pyatenko, A.;Koshizaki, N.;Moehwald, H.;Shchukin, D.;
10:116:7 Tunable electronic and magnetic properties of graphene-like ZnO monolayer upon doping and CO adsorption: a first-principles study
DOI:10.1039/c4ta01874e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:3 AU: Zhang, Yong-Hui;Zhang, Mei-Ling;Zhou, Ye-Cheng;Zhao, Ji-Hong;Fang, Shao-Ming;Li, Feng;
10:116:8 Fabrication of Crystalline Silicon Spheres by Selective Laser Heating in Liquid Medium
DOI:10.1021/la200231f JN:LANGMUIR PY:2011
TC:22 AU: Li, Xiangyou;Pyatenko, Alexander;Shimizu, Yoshiki;Wang, Hongqiang;Koga, Kenji;Koshizaki, Naoto;
10:116:9 Preparation and optical property of porous ZnO nanobelts
DOI:10.1016/j.mssp.2011.08.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:6 AU: Qu, Xiurong;Lu, Shuchen;Wang, Jingju;Li, Zhongqiu;Xue, Huijie;
10:116:10 On-Chip Screening of Experimental Conditions for the Synthesis of Noble-Metal Nanostructures with Different Morphologies
DOI:10.1002/smll.201101299 JN:SMALL PY:2011
TC:14 AU: Zhou, Jianhua;Zeng, Jie;Grant, Jennifer;Wu, Hongkai;Xia, Younan;
10:116:11 Photomediated assembly of single crystalline silver spherical particles with enhanced electrochemical performance
DOI:10.1039/c2ta00389a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:3 AU: Wang, Hongqiang;Jia, Lichao;Li, Liang;Li, Xiangyou;Swiatkowska-Warkocka, Zaneta;Kawaguchi, Kenji;Pyatenko, Alexander;Koshizaki, Naoto;
10:116:12 Improving the performance of quantum dot-sensitized solar cells by using TiO2 nanosheets with exposed highly reactive facets
DOI:10.1088/0957-4484/24/24/245401 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: You, Ting;Jiang, Lei;Han, Ke-Li;Deng, Wei-Qiao;
10:117:1:1 Taming Random Lasers through Active Spatial Control of the Pump
DOI:10.1103/PhysRevLett.109.033903 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:26 AU: Bachelard, N.;Andreasen, J.;Gigan, S.;Sebbah, P.;
10:117:1:2 Pump-Controlled Directional Light Emission from Random Lasers
DOI:10.1103/PhysRevLett.111.023902 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:13 AU: Hisch, Thomas;Liertzer, Matthias;Pogany, Dionyz;Mintert, Florian;Rotter, Stefan;
10:117:1:3 Tuning random lasers by engineered absorption
DOI:10.1063/1.3571452 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: El-Dardiry, Ramy G. S.;Lagendijk, Ad;
10:117:1:4 Optofluidic random laser
DOI:10.1063/1.4757872 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Bhaktha, B. N. Shivakiran;Bachelard, Nicolas;Noblin, Xavier;Sebbah, Patrick;
10:117:1:5 Active subnanometer spectral control of a random laser
DOI:10.1063/1.4792759 JN:APPLIED PHYSICS LETTERS PY:2013
TC:14 AU: Leonetti, Marco;Lopez, Cefe;
10:117:1:6 Single-mode, quasi-stable coherent random lasing in an amplifying periodic-on-average random system
DOI:10.1063/1.4870631 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Tiwari, Anjani Kumar;Alee, K. Shadak;Uppu, Ravitej;Mujumdar, Sushil;
10:117:1:7 Forster energy transfer induced random lasing at unconventional excitation wavelengths
DOI:10.1063/1.4835216 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Alee, K. Shadak;Barik, Sabyasachi;Mujumdar, Sushil;
10:117:1:8 Random Lasing over Gap States from a Quasi-One-Dimensional Amplifying Periodic-on-Average Random Superlattice
DOI:10.1103/PhysRevLett.111.233903 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:4 AU: Tiwari, Anjani Kumar;Mujumdar, Sushil;
10:117:1:9 Active control of emission directionality of semiconductor microdisk lasers
DOI:10.1063/1.4883637 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Liew, Seng Fatt;Redding, Brandon;Ge, Li;Solomon, Glenn S.;Cao, Hui;
10:117:1:10 Random lasing action in a polydimethylsiloxane wrinkle induced disordered structure
DOI:10.1063/1.4890525 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Shen, Zhenhua;Wu, Leilei;Zhu, Shu;Zheng, Yuanlin;Chen, Xianfeng;
10:117:1:11 Tunable single mode lasing from an on-chip optofluidic ring resonator laser
DOI:10.1063/1.3554362 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Lee, Wonsuk;Li, Hao;Suter, Jonathan D.;Reddy, Karthik;Sun, Yuze;Fan, Xudong;
10:117:2:1 Low-threshold and quasi-single-mode random laser within a submicrometer-sized ZnO spherical particle film
DOI:10.1063/1.4792349 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Fujiwara, Hideki;Niyuki, Ryo;Ishikawa, Yoshie;Koshizaki, Naoto;Tsuji, Takeshi;Sasaki, Keiji;
10:117:2:2 Raman mode random lasing in ZnS-beta-carotene random gain media
DOI:10.1063/1.4807668 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Bingi, Jayachandra;Warrier, Anita R.;Vijayan, C.;
10:117:2:3 Improved lasing characteristics of ZnO/organic-dye random laser
DOI:10.1063/1.4705471 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Firdaus, Kurniawan;Nakamura, Toshihiro;Adachi, Sadao;
10:117:2:4 Random laser action in GaN nanocolumns
DOI:10.1063/1.3495993 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Sakai, Masaru;Inose, Yuta;Ema, Kazuhiro;Ohtsuki, Tomi;Sekiguchi, Hiroto;Kikuchi, Akihiko;Kishino, Katsumi;
10:117:2:5 Control of random lasing in ZnO/Al2O3 nanopowders
DOI:10.1063/1.3665913 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Nakamura, Toshihiro;Tiwari, Bishnu P.;Adachi, Sadao;
10:117:2:6 Temperature dependence of GaAs random laser characteristics
DOI:10.1103/PhysRevB.81.125324 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Nakamura, Toshihiro;Takahashi, Toru;Adachi, Sadao;
10:117:2:7 Ultraviolet random lasing from a diamond nanoparticle film
DOI:10.1063/1.4889080 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Niyuki, Ryo;Takashima, Hideaki;Fujiwara, Hideki;Sasaki, Keiji;
10:117:2:8 Random lasing from localized modes in strongly scattering systems consisting of macroporous titania monoliths infiltrated with dye solution
DOI:10.1063/1.3464962 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Murai, Shunsuke;Fujita, Koji;Konishi, Junko;Hirao, Kazuyuki;Tanaka, Katsuhisa;
10:117:2:9 Ultraviolet Random Lasing Action from Highly Disordered n-AlN/p-GaN Heterojunction
DOI:10.1021/am2002372 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:3 AU: Yang, H. Y.;Yu, S. F.;Wong, J. I.;Cen, Z. H.;Liang, H. K.;Chen, T. P.;
10:117:3:1 Random lasing and weak localization of light in transparent Nd+3 doped phosphate glass
DOI:10.1063/1.4788682 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Zhang, Jingwen;Xu, Long;Wang, Hao;Huang, Feng;Sun, Xiudong;Zhao, Hua;Chen, Xuesheng;
10:117:3:2 Electroinduced structural change- and random walks-based impact on the light emission in Er3+/Yb3+ doped (Pb,La)(Zr,Ti)O-3 ceramics
DOI:10.1063/1.4810899 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Xu, L.;Zhang, J.;Zhang, S.;Xu, C.;Zou, Y. K.;Zhao, H.;
10:117:3:3 Optical energy storage and reemission based weak localization of light and accompanying random lasing action in disordered Nd3+ doped (Pb, La)(Zr, Ti)O-3 ceramics
DOI:10.1063/1.4892873 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Xu, Long;Zhao, Hua;Xu, Caixia;Zhang, Siqi;Zhang, Jingwen;
10:117:3:4 Optoenergy storage, stimulated processes in optical amplification with electro-optic ceramic gain media of Nd3+ doped lanthanum lead zirconate titanate
DOI:10.1063/1.3618683 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Wu, Ye;Zhao, Hua;Zou, Yingyin K.;Chen, Xuesheng;Di Bartolo, Baldassare;Zhang, Jingwen W.;
10:117:4:1 Light localization characteristics in a random configuration of dielectric cylindrical columns
DOI:10.1103/PhysRevB.82.205328 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Inose, Yuta;Sakai, Masaru;Ema, Kazuhiro;Kikuchi, Akihiko;Kishino, Katsumi;Ohtsuki, Tomi;
10:117:4:2 A study on the effect of filling factor for laser action in dielectric random media
DOI:10.1007/s00339-011-6734-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:5 AU: Fujii, Garuda;Matsumoto, Toshiro;Takahashi, Toru;Ueta, Tsuyoshi;
10:118:1 Low-Threshold Electrically Pumped Random Lasers
DOI:10.1002/adma.200903623 JN:ADVANCED MATERIALS PY:2010
TC:62 AU: Zhu, Hai;Shan, Chong-Xin;Zhang, Ji-Ying;Zhang, Zhen-Zhong;Li, Bing-Hui;Zhao, Dong-Xu;Yao, Bin;Shen, De-Zhen;Fan, Xi-Wu;Tang, Zi-Kang;Hou, Xianghui;Choy, Kwang-Leong;
10:118:2 ZnO random laser diode arrays for stable single-mode operation at high power
DOI:10.1063/1.3527922 JN:APPLIED PHYSICS LETTERS PY:2010
TC:32 AU: Liang, H. K.;Yu, S. F.;Yang, H. Y.;
10:118:3 Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
DOI:10.1063/1.3356221 JN:APPLIED PHYSICS LETTERS PY:2010
TC:34 AU: Liang, H. K.;Yu, S. F.;Yang, H. Y.;
10:118:4 Electrically pumped lasing from single ZnO micro/nanowire and poly(3,4-ethylenedioxythiophene):poly(styrenexulfonate) hybrid heterostructures
DOI:10.1063/1.4739430 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Zhang, Qi;Qi, Junjie;Li, Xin;Yi, Fang;Wang, Zengze;Zhang, Yue;
10:118:5 Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films
DOI:10.1063/1.4824176 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Wang, Canxing;Jiang, Haotian;Li, Yunpeng;Ma, Xiangyang;Yang, Deren;
10:118:6 A chemical strategy to reinforce electrically pumped ultraviolet random lasing from ZnO films
DOI:10.1039/c2jm33225f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:10 AU: Li, Yunpeng;Ma, Xiangyang;Jin, Lu;Yang, Deren;
10:118:7 Enhancement of random lasing through fluorescence resonance energy transfer and light scattering mediated by nanoparticles
DOI:10.1063/1.3515913 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Wang, C. S.;Chen, Y. L.;Lin, H. Y.;Chen, Y. T.;Chen, Y. F.;
10:118:8 Electrically pumped near-ultraviolet lasing from ZnO/MgO core/shell nanowires
DOI:10.1063/1.3625925 JN:APPLIED PHYSICS LETTERS PY:2011
TC:29 AU: Liu, C. Y.;Xu, H. Y.;Ma, J. G.;Li, X. H.;Zhang, X. T.;Liu, Y. C.;Mu, R.;
10:118:9 Low-threshold electrically pumped ultraviolet laser diode
DOI:10.1039/c0jm04233a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:16 AU: Zhu, Hai;Shan, Chong-Xin;Li, Bing-Hui;Zhang, Z. Z.;Shen, De-Zhen;Choy, Kwang-Leong;
10:118:10 Use of distributed Bragg reflectors to enhance Fabry-P,rot lasing in vertically aligned ZnO nanowires
DOI:10.1007/s00339-012-7330-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Kong, Jieying;Chu, Sheng;Huang, Jian;Olmedo, Mario;Zhou, Weihang;Zhang, Long;Chen, Zhanghai;Liu, Jianlin;
10:118:11 Electrically pumped ultraviolet lasing from ZnO in metal-insulator-semi devices
DOI:10.1007/s00339-013-7710-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Wu, Kewei;Ding, Ping;Lu, Yangfan;Pan, Xinhua;He, Haiping;Huang, Jingyun;Zhao, Binghui;Chen, Cong;Chen, Lingxiang;Ye, Zhizhen;
10:118:12 Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device
DOI:10.1063/1.4902921 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Morshed, Muhammad M.;Suja, Mohammad;Zuo, Zheng;Liu, Jianlin;
10:118:13 Distributed Bragg reflector assisted low-threshold ZnO nanowire random laser diode
DOI:10.1063/1.4870513 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Huang, Jian;Morshed, Muhammad Monzur;Zuo, Zheng;Liu, Jianlin;
10:118:14 Electrically pumped random lasing in ZnO-based metal-insulator-semiconductor structured devices: Effect of ZnO film thickness
DOI:10.1063/1.4808445 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Li, Yunpeng;Wang, Canxing;Jin, Lu;Ma, Xiangyang;Yang, Deren;
10:118:15 Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure
DOI:10.1007/s00339-012-6850-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:6 AU: Kong, Jieying;Chu, Sheng;Zuo, Zheng;Ren, Jingjian;Olmedo, Mario;Liu, Jianlin;
10:118:16 Electrically pumped ultraviolet random lasing from ZnO films: Compensation between optical gain and light scattering
DOI:10.1063/1.3531960 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Tian, Ye;Ma, Xiangyang;Jin, Lu;Yang, Deren;
10:118:17 Electrically pumped ultraviolet random lasing from heterostructures formed by bilayered MgZnO films on silicon
DOI:10.1063/1.3478217 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Tian, Ye;Ma, Xiangyang;Li, Dongsheng;Yang, Deren;
10:118:18 Electrically pumped simultaneous ultraviolet and visible random laser actions from ZnO-CdO interdiffused film
DOI:10.1063/1.3672831 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Tian, Ye;Ma, Xiangyang;Xiang, Luelue;Yang, Deren;
10:118:19 Electrically pumped random lasing from the light-emitting device based on two-fold-tandem SiO2/ZnO structure
DOI:10.1063/1.4803020 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Li, Yunpeng;Wang, Canxing;Jin, Lu;Ma, Xiangyang;Yang, Deren;
10:118:20 Enhancement of random lasing assisted by light scattering and resonance energy transfer based on ZnO/SnO nanocomposites
DOI:10.1063/1.3684634 JN:AIP ADVANCES PY:2012
TC:3 AU: Wang, C. S.;Lin, H. Y.;Lin, T. H.;Chen, Y. F.;
10:118:21 Ultraviolet light emissions in MgZnO/ZnO double heterojunction diodes by molecular beam epitaxy
DOI:10.1116/1.3374436 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:3 AU: Kong, Jieying;Li, Lin;Yang, Zheng;Liu, Jianlin;
10:118:22 Carrier transport mechanisms of n-ZnO/ZnMgO/p-GaN heterojunctions revealed by temperature-dependent current-voltage characteristics
DOI:10.1016/j.mssp.2013.06.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Bian, Jiming;Kou, Xiaoqiang;Zhang, Zhikun;Zhang, Yuzhi;Sun, Jingchang;Qin, Fuwen;Liu, Weifeng;Luo, Yingmin;
10:118:23 Random lasing in the composites consisting of photonic crystals and semiconductor nanowires
DOI:10.1063/1.3631673 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Lu, M. L.;Lin, H. Y.;Chen, T. T.;Chen, Y. F.;
10:118:24 Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires
DOI:10.1088/0957-4484/22/24/245203 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Kim, Kwangeun;Moon, Taeho;Kim, Jeongyong;Kim, Sangsig;
10:119:1 Ion-Induced Synthesis of Uniform Single-Crystalline Sulphide-Based Quaternary-Alloy Hexagonal Nanorings for Highly Efficient Photocatalytic Hydrogen Evolution
DOI:10.1002/adma.201204545 JN:ADVANCED MATERIALS PY:2013
TC:12 AU: Hu, Peng;Pramana, Stevin Snellius;Cao, Shaowen;Ngaw, Chee Keong;Lin, Jingdong;Loo, Say Chye Joachim;Tan, Timothy Thatt Yang;
10:119:2 2,4,6-Trinitrotoluene (TNT) Chemical Sensing Based on Aligned Single-Walled Carbon Nanotubes and ZnO Nanowires
DOI:10.1002/adma.200904005 JN:ADVANCED MATERIALS PY:2010
TC:47 AU: Chen, Po-Chiang;Sukcharoenchoke, Saowalak;Ryu, Koungmin;de Arco, Lewis Gomez;Badmaev, Alexander;Wang, Chuan;Zhou, Chongwu;
10:119:3 Templating synthesis of ZnO hollow nanospheres loaded with Au nanoparticles and their enhanced gas sensing properties
DOI:10.1039/c2jm15342d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:29 AU: Wang, Lili;Lou, Zheng;Fei, Teng;Zhang, Tong;
10:119:4 Trisodium citrate assisted synthesis of ZnO hollow spheres via a facile precipitation route and their application as gas sensor
DOI:10.1039/c0jm04405a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:38 AU: Ge, Lan;Jing, Xiaoyan;Wang, Jun;Wang, Jing;Jamil, Saba;Liu, Qi;Liu, Fuchen;Zhang, Milin;
10:119:5 Fabrication of ZnO nanorod-assembled multishelled hollow spheres and enhanced performance in gas sensor
DOI:10.1039/c1jm11919b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:24 AU: Hu, Peng;Han, Ning;Zhang, Xing;Yao, Mingshui;Cao, Yuebin;Zuo, Ahui;Yang, Gang;Yuan, Fangli;
10:119:6 Rapid microwave-assisted synthesis of hierarchical ZnO hollow spheres and their application in Cr(VI) removal
DOI:10.1088/0957-4484/23/23/235604 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Zhao, Xiaowei;Qi, Limin;
10:119:7 Facile template-free hydrothermal fabrication of ZnO hollow microspheres for gas sensing applications
DOI:10.1016/j.ceramint.2014.07.156 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Sun, Hongming;Wang, Limin;Chu, Deqing;Ma, Zhongchao;Wang, Aoxuan;Zheng, Yangjun;Wang, Longdang;
10:119:8 Controlled Synthesis of Tuned Bandgap Nanodimensional Alloys of PbSxSe1-x
DOI:10.1021/ja200750s JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:28 AU: Akhtar, Javeed;Afzaal, Mohammad;Banski, Mateusz;Podhorodecki, Artur;Syperek, Marcin;Misiewicz, Jan;Bangert, Ursel;Hardman, Samantha J. O.;Graham, Darren M.;Flavell, Wendy R.;Binks, David J.;Gardonio, Sandra;O'Brien, Paul;
10:119:9 Zinc oxide core-shell hollow microspheres with multi-shelled architecture for gas sensor applications
DOI:10.1039/c1jm13354c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:37 AU: Wang, Lili;Lou, Zheng;Fei, Teng;Zhang, Tong;
10:119:10 Cross-linked p-type Co3O4 octahedral nanoparticles in 1D n-type TiO2 nanofibers for high-performance sensing devices
DOI:10.1039/c4ta00651h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:18 AU: Wang, Lili;Deng, Jianan;Lou, Zheng;Zhang, Tong;
10:119:11 Solvothermal synthesis of morphology controllable CoCO3 and their conversion to Co3O4 for catalytic application
DOI:10.1016/j.powtec.2011.11.040 JN:POWDER TECHNOLOGY PY:2012
TC:12 AU: Jing, Xiaoyan;Song, Shanshan;Wang, Jun;Ge, Lan;Jamil, Saba;Liu, Qi;Mann, Tom;He, Yang;Zhang, Milin;Wei, Hao;Liu, Lianhe;
10:119:12 Adsorption of 2,4,6-trinitrotoluene on the ZnO (2(1)over-bar(1)over-bar0) surface: A density functional theory study of the detection mechanism of ZnO nanowire chemiresistors
DOI:10.1063/1.4825365 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Alnemrat, Sufian;Brett, Gary T.;Hooper, Joseph P.;
10:119:13 Fabrication of novel multi-morphological tetrazole-based infinite coordination polymers; transformation studies and their calcination to mineral zinc oxide nano- and microarchitectures
DOI:10.1039/c3ta14904h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:4 AU: Sharifzadeh, Zahra;Abedi, Sedigheh;Morsali, Ali;
10:119:14 Facile Synthesis of Fe-Doped Titanate Nanotubes with Enhanced Photocatalytic Activity for Castor Oil Oxidation
DOI:10.1155/2013/621929 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Fu, Guozhu;Wei, Gang;Yang, Yanqiu;Xiang, WeiCheng;Qiao, Ning;
10:119:15 Fabrication and catalytic properties of novel urchin-like Co3O4
DOI:10.1016/j.ssi.2010.06.027 JN:SOLID STATE IONICS PY:2010
TC:8 AU: Zhang, DongEn;Xie, Qing;Chen, AiMei;Wang, MingYan;Li, ShanZhong;Zhang, XiaoBo;Han, GuiQuan;Ying, AiLing;Gong, JunYan;Tong, ZhiWei;
10:120:1 Shape-Selective Dependence of Room Temperature Ferromagnetism Induced by Hierarchical ZnO Nanostructures
DOI:10.1021/am501911y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:10 AU: Motaung, D. E.;Mhlongo, G. H.;Nkosi, S. S.;Malgas, G. F.;Mwakikunga, B. W.;Coetsee, E.;Swart, H. C.;Abdallah, H. M. I.;Moyo, T.;Ray, S. S.;
10:120:2 Orientation-dependent low field magnetic anomalies and room-temperature spintronic material - Mn doped ZnO films by aerosol spray pyrolysis
DOI:10.1016/j.jallcom.2013.06.090 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Nkosi, S. S.;Kortidis, I.;Motaung, D. E.;Malgas, G. F.;Keartland, J.;Sideras-Haddad, E.;Forbes, A.;Mwakikunga, B. W.;Sinha-Ray, S.;Kiriakidis, G.;
10:120:3 Defect-induced magnetism in undoped and Mn-doped wide band gap zinc oxide grown by aerosol spray pyrolysis
DOI:10.1016/j.apsusc.2014.04.183 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Motaung, D. E.;Kortidis, I.;Papadaki, D.;Nkosi, S. S.;Mhlongo, G. H.;Wesley-Smith, J.;Malgas, G. F.;Mwakikunga, B. W.;Coetsee, E.;Swart, H. C.;Kiriakidis, G.;Ray, S. S.;
10:120:4 Synthesis of Mn-doped ZnO diluted magnetic semiconductors in the presence of ethyl acetoacetate under solvothermal conditions
DOI:10.1016/j.jmmm.2010.02.044 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:27 AU: Jing, Chengbin;Jiang, Yingjing;Bai, Wei;Chu, Junhao;Liu, Aiyun;
10:120:5 Evidence of intrinsic magnetism in capped ZnO nanoparticles
DOI:10.1103/PhysRevB.82.064411 JN:PHYSICAL REVIEW B PY:2010
TC:34 AU: Chaboy, J.;Boada, R.;Piquer, C.;Laguna-Marco, M. A.;Garcia-Hernandez, M.;Carmona, N.;Llopis, J.;Ruiz-Gonzalez, M. L.;Gonzalez-Calbet, J.;Fernandez, J. F.;Garcia, M. A.;
10:120:6 Temperature-dependence on the structural, optical, and paramagnetic properties of ZnO nanostructures
DOI:10.1016/j.apsusc.2013.12.076 JN:APPLIED SURFACE SCIENCE PY:2014
TC:8 AU: Mhlongo, Gugu H.;Motaung, David E.;Nkosi, Steven S.;Swart, H. C.;Malgas, Gerald F.;Hillie, Kenneth T.;Mwakikunga, Bonex W.;
10:120:7 Structural and optical properties of ZnO nanostructures grown by aerosol spray pyrolysis: Candidates for room temperature methane and hydrogen gas sensing
DOI:10.1016/j.apsusc.2013.04.056 JN:APPLIED SURFACE SCIENCE PY:2013
TC:10 AU: Motaung, D. E.;Mhlongo, G. H.;Kortidis, I.;Nkosi, S. S.;Malgas, G. F.;Mwakikunga, W.;Ray, S. Sinha;Kiriakidis, G.;
10:120:8 Antiferromagnetic-paramagnetic state transition of NiO synthesized by pulsed laser deposition
DOI:10.1016/j.apsusc.2012.11.134 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Nkosi, S. S.;Yalisi, B.;Motaung, D. E.;Keartland, J.;Sideras-Haddad, E.;Forbes, A.;Mwakikunga, B. W.;
10:120:9 Optical constants correlated electrons-spin of micro doughnuts of Mn-doped ZnO films
DOI:10.1016/j.apsusc.2013.04.100 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Nkosi, S. S.;Kortidis, I.;Motaung, D. E.;Keartland, J.;Sideras-Haddad, E.;Forbes, A.;Mwakikunga, B. W.;Kiriakidis, G.;Sinha-Ray, S.;
10:120:10 dEvidence of Oxygen Ferromagnetism in ZnO Based Materials
DOI:10.1002/adfm.201303087 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:9 AU: Guglieri, Clara;Cespedes, Eva;Espinosa, Ana;Angeles Laguna-Marco, Maria;Carmona, Noemi;Takeda, Yukiharu;Okane, Tetsuo;Nakamura, Tetsuya;Garcia-Hernandez, Mar;Angel Garcia, Miguel;Chaboy, Jesus;
10:120:11 Preparation and characterization of carbon/nickel oxide nanocomposite coatings for solar absorber applications
DOI:10.1016/j.apsusc.2012.04.029 JN:APPLIED SURFACE SCIENCE PY:2012
TC:12 AU: Roro, Kittessa T.;Tile, Ngcali;Forbes, Andrew;
10:120:12 Evidence by EPR of ferromagnetic phase in Mn-doped ZnO nanoparticles annealed at different temperatures
DOI:10.1016/j.jallcom.2012.10.183 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Toloman, D.;Mesaros, A.;Popa, A.;Raita, O.;Silipas, T. D.;Vasile, B. S.;Pana, O.;Giurgiu, L. M.;
10:120:13 Low-field microwave absorption in pulse laser deposited FeSi thin film
DOI:10.1016/j.jmmm.2011.11.003 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:12 AU: Gavi, H.;Ngom, B. D.;Beye, A. C.;Strydom, A. M.;Srinivasu, V. V.;Chaker, M.;Manyala, N.;
10:120:14 The modification of structural and optical properties of nano- and submicron ZnO powders by variation of solvothermal syntheses conditions
DOI:10.1007/s11051-014-2670-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Golic, D. Lukovic;Cirkovic, J.;Scepanovic, M.;Sreckovic, T.;Longo, E.;Varela, J. A.;Daneu, N.;Stamenkovic, V.;Brankovic, G.;Brankovic, Z.;
10:120:15 Solar absorption and thermal emission properties of multiwall carbon nanotube/nickel oxide nanocomposite thin films synthesized by sol-gel process
DOI:10.1016/j.mseb.2012.03.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:14 AU: Roro, Kittessa T.;Tile, Ngcali;Mwakikunga, Bonex;Yalisi, Brian;Forbes, Andrew;
10:120:16 Optical design and co-sputtering preparation of high performance Mo-SiO2 cermet solar selective absorbing coating
DOI:10.1016/j.apsusc.2013.04.142 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Zheng, Liqing;Gao, Fangyuan;Zhao, Shuxi;Zhou, Fuyun;Nshimiyimana, Jean Pierre;Diao, Xungang;
10:120:17 Synthesis and structural, magnetic characterization of nanocrystalline Zn-1 (-) xMnxO diluted magnetic semiconductors (DMSs) synthesized by combustion reaction
DOI:10.1016/j.ceramint.2013.11.108 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Torquato, R. A.;Shirsath, Sagar E.;Kiminami, R. H. G. A.;Costa, A. C. F. M.;
10:120:18 The optical, magnetic, and electrical characteristics of Fe2Si thin films
DOI:10.1016/j.jallcom.2014.06.064 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Chen, Yuan-Tsung;Tan, Y. C.;
10:120:19 Size dependent ferromagnetism in dodecyl amine capped ZnO nanoparticles
DOI:10.1016/j.mseb.2013.08.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:0 AU: Nishad, K. K.;Pandey, R. K.;
10:120:20 Room Temperature Ferromagnetism in PLD Grown Zn1-xLixO1-yNy Thin Films
DOI:10.1080/10584587.2013.852039 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Jindal, Kajal;Tomar, Monika;Katiyar, R. S.;Gupta, Vinay;
10:120:21 Theoretical study of the gas sensitivity and response time of metal oxide thin films
DOI:10.1016/j.tsf.2011.04.163 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Li, J. C.;Han, X. B.;Jiang, Y. H.;Ba, D. C.;
10:120:22 Nanocomposites derived from silica and carbon for low temperature photothermal conversion
DOI:10.1016/j.tsf.2013.10.111 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Charlot, A.;Bruguier, O.;Toquer, G.;Grandjean, A.;Deschanels, X.;
10:121:1 Facile electrochemical synthesis of ZnO/PbSe heterostructure nanorod arrays and PbSe nanotube arrays
DOI:10.1016/j.apsusc.2012.05.127 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Li, Haohua;Yang, Juan;Liang, Chaolun;Zhang, Wei;Zhou, Ming;
10:121:2 Growth of ZnO hemispheres on silicon by a hydrothermal method
DOI:10.1016/j.ceramint.2012.09.083 JN:CERAMICS INTERNATIONAL PY:2013
TC:13 AU: Lee, Young-Seok;Lee, Sung-Nam;Park, Il-Kyu;
10:121:3 Growth of flower-like ZnO on polyhedron CuO fabricated by a facile hydrothermal method on Cu substrate
DOI:10.1016/j.ceramint.2013.09.061 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Shi, Ruixia;Yang, Ping;Zhang, Sha;Dong, Xiaobin;
10:121:4 In situ electrochemically etching-derived ZnO nanotube arrays for highly efficient and facilely recyclable photocatalyst
DOI:10.1016/j.apsusc.2012.05.014 JN:APPLIED SURFACE SCIENCE PY:2012
TC:17 AU: Xu, Feng;Chen, Jing;Guo, Liyong;Lei, Shuangying;Ni, Yaru;
10:121:5 Microstructures and photocatalytic properties of porous ZnO films synthesized by chemical bath deposition method
DOI:10.1016/j.apsusc.2011.12.080 JN:APPLIED SURFACE SCIENCE PY:2012
TC:19 AU: Wang, Huihu;Dong, Shijie;Chang, Ying;Zhou, Xiaoping;Hu, Xinbin;
10:121:6 A facile synthesis of ZnO nanotubes and their hydrogen sensing properties
DOI:10.1016/j.apsusc.2013.05.112 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Huang, Bohr-Ran;Lin, Jun-Cheng;
10:121:7 A two-step route to synthesize highly oriented ZnO nanotube arrays
DOI:10.1016/j.ceramint.2012.02.033 JN:CERAMICS INTERNATIONAL PY:2012
TC:27 AU: Yang, Jiyuan;Lin, Yu;Meng, Yongming;Liu, Yanhe;
10:121:8 ZnO photoanodes with different morphologies grown by electrochemical deposition and their dye-sensitized solar cell properties
DOI:10.1016/j.ceramint.2013.12.146 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Zi, Min;Zhu, Min;Chen, Ling;Wei, Haoming;Yang, Xiaopeng;Cao, Bingqiang;
10:121:9 Fabrication of hollow ZnO hexahedral nanocrystals grown on Si(100) substrate by a facile route
DOI:10.1016/j.matlet.2013.11.035 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Ye, Linjing;Guan, Weisheng;Lu, Changyu;Zhao, Huan;Lu, Xun;
10:121:10 Electrodeposition for the synthesis of ZnO nanorods modified by surface attachment with ZnO nanoparticles and their dye-sensitized solar cell applications
DOI:10.1016/j.ceramint.2013.07.065 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Meng, Yongming;Lin, Yu;Lin, Yibing;
10:121:11 Controlled synthesis of oriented ZnO nanorod arrays by seed-layer-free electrochemical deposition
DOI:10.1016/j.apsusc.2011.09.113 JN:APPLIED SURFACE SCIENCE PY:2011
TC:17 AU: Lin, Yu;Yang, Jiyuan;Zhou, Xiaoya;
10:121:12 Optical and current transport properties of CuO/ZnO nanocoral p-n heterostructure hydrothermally synthesized at low temperature
DOI:10.1007/s00339-012-6995-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:15 AU: Zainelabdin, A.;Zaman, S.;Amin, G.;Nur, O.;Willander, M.;
10:121:13 Fabrication and characterization of flower-like CuO-ZnO heterostructure nanowire arrays by photochemical deposition
DOI:10.1088/0957-4484/22/1/015606 JN:NANOTECHNOLOGY PY:2011
TC:19 AU: Jung, Sungmook;Jeon, Seongho;Yong, Kijung;
10:121:14 CuO/ZnO Nanocorals synthesis via hydrothermal technique: growth mechanism and their application as Humidity Sensor
DOI:10.1039/c2jm16597j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:32 AU: Zainelabdin, A.;Amin, G.;Zaman, S.;Nur, O.;Lu, J.;Hultman, L.;Willander, M.;
10:121:15 Controllable deposition of cadmium oxide and hydroxide nanostructures on silicon using a hydrothermal method
DOI:10.1016/j.jallcom.2014.01.045 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Jung, Yong-Il;Baek, Seong-Ho;Park, Il-Kyu;
10:121:16 Novel horseshoe-shaped ZnO nanorods and their optical properties
DOI:10.1016/j.apsusc.2011.12.114 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Li, Junlin;Zhuang, Huizhao;
10:121:17 A Single-Source Precursor Route to Unusual PbSe Nanostructures by a Solution-Liquid-Solid Method
DOI:10.1021/ja209831n JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:11 AU: Akhtar, Javeed;Akhtar, Masood;Malik, Mohammad Azad;O'Brien, Paul;Raftery, James;
10:122:1 Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen
DOI:10.1063/1.4767451 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Tang, Kun;Gu, Shulin;Ye, Jiandong;Huang, Shimin;Gu, Ran;Zhang, Rong;Zheng, Youdou;
10:122:2 Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition
DOI:10.1116/1.3549136 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:11 AU: Tang, Kun;Gu, Shulin;Li, Shuzhen;Ye, Jiandong;Zhu, Shunming;Chen, Hui;Liu, Jiagao;Zhang, Rong;Shi, Yi;Zheng, Youdou;
10:122:3 Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition
DOI:10.1116/1.4738949 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:2 AU: Tang, Kun;Gu, Shulin;Ye, Jiandong;Zhu, Shunming;Huang, Shimin;Gu, Ran;Zhang, Rong;Shi, Yi;Zheng, Youdou;
10:122:4 Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films
DOI:10.1063/1.4809669 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Tang, Kun;Gu, Shulin;Ye, Jiandong;Huang, Shimin;Gu, Ran;Zhu, Shunming;Zhang, Rong;Shi, Yi;Zheng, Youdou;
10:122:5 Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy
DOI:10.1063/1.3489101 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Ye, J. D.;Pannirselvam, S.;Lim, S. T.;Bi, J. F.;Sun, X. W.;Lo, G. Q.;Teo, K. L.;
10:122:6 Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures
DOI:10.1063/1.3662964 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Chen, Hui;Gu, Shulin;Liu, Jiagao;Ye, Jiandong;Tang, Kun;Zhu, Shunming;Zheng, Youdou;
10:122:7 The role of carriers in spin current and magnetic coupling for ZnO:Co diluted magnetic oxides
DOI:10.1063/1.3309588 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Chou, H.;Lin, C. P.;Hsu, H. S.;Sun, S. J.;
10:122:8 Tellurium assisted realization of p-type N-doped ZnO
DOI:10.1063/1.3453658 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Tang, Kun;Gu, Shulin;Wu, Kongping;Zhu, Shunming;Ye, Jiandong;Zhang, Rong;Zheng, Youdou;
10:122:9 Annealing temperature dependence of the structures and properties of Co-implanted ZnO films
DOI:10.1016/j.apsusc.2014.05.177 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Chen, Bin;Tang, Kun;Gu, Shulin;Ye, Jiandong;Huang, Shimin;Gu, Ran;Zhang, Yang;Yao, Zhengrong;Zhu, Shunming;Zheng, Youdou;
10:122:10 Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy
DOI:10.1063/1.3498800 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Park, S. H.;Minegishi, T.;Lee, H. J.;Park, J. S.;Im, I. H.;Yao, T.;Oh, D. C.;Taishi, T.;Yonenaga, I.;Chang, J. H.;
10:122:11 Spin-polarized two-dimensional electron gas in undoped MgxZn1-xO/ZnO heterostructures
DOI:10.1063/1.4711775 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Han, K.;Tang, N.;Ye, J. D.;Duan, J. X.;Liu, Y. C.;Teo, K. L.;Shen, B.;
10:122:12 Size effects on formation energies and electronic structures of oxygen and zinc vacancies in ZnO nanowires: A first-principles study
DOI:10.1063/1.3549131 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Fang, D. Q.;Zhang, R. Q.;
10:122:13 Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperature
DOI:10.1063/1.4805079 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Duan, J. X.;Tang, N.;Ye, J. D.;Mei, F. H.;Teo, K. L.;Chen, Y. H.;Ge, W. K.;Shen, B.;
10:122:14 p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing
DOI:10.1016/j.jcrysgro.2012.10.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:6 AU: Park, Seung-Hwan;Minegishi, Tsutomu;Oh, Dong-Cheol;Chang, Ji-Ho;Yao, Takafumi;Taishi, Toshinori;Yonenaga, Ichiro;
10:122:15 Improvement of physical properties of ZnO thin films by tellurium doping
DOI:10.1016/j.apsusc.2014.06.187 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Sonmezoglu, Savas;Akman, Erdi;
10:122:16 Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition
DOI:10.1063/1.3665203 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Shi, K.;Zhang, P. F.;Wei, H. Y.;Jiao, C. M.;Jin, P.;Liu, X. L.;Yang, S. Y.;Zhu, Q. S.;Wang, Z. G.;
10:122:17 Realization of p-type ZnO by (nN, Mg) codoping from first-principles
DOI:10.1016/j.optmat.2010.04.002 JN:OPTICAL MATERIALS PY:2010
TC:13 AU: Chen, Lanli;Xiong, Zhihua;Wan, Qixin;Li, Dongmei;
10:122:18 Influences of unintentionally doped carbon on magnetic properties in Mn-N co-doped ZnO
DOI:10.1016/j.tsf.2010.12.006 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Wu, Kongping;Gu, Shulin;Tang, Kun;Zhu, Shunming;Ye, Jiandong;Zhang, Rong;Zheng, Youdou;
10:122:19 Temperature dependence of electronic band transition in Mn-doped SnO2 nanocrystalline films determined by ultraviolet-near-infrared transmittance spectra
DOI:10.1016/j.materresbull.2011.09.019 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Chen, X. G.;Li, W. W.;Wu, J. D.;Sun, J.;Jiang, K.;Hu, Z. G.;Chu, J. H.;
10:122:20 Anomalous optical processes in photoluminescence from ultrasmall quantum dots of ZnO
DOI:10.1116/1.3578344 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:2 AU: Kukreja, L. M.;Misra, P.;Das, A. K.;Sartor, J.;Kalt, H.;
10:122:21 A pathway to p-type conductivity in (nN, B)-codoped ZnO
DOI:10.1016/j.scriptamat.2010.08.002 JN:SCRIPTA MATERIALIA PY:2010
TC:2 AU: Xiong, Zhihua;Chen, Lanli;Zheng, Changda;Luo, Lan;Wan, Qixin;
10:123:1 Growth of flower-like ZnO on ZnO nanorod arrays created on zinc substrate through low-temperature hydrothermal synthesis
DOI:10.1016/j.apsusc.2012.09.164 JN:APPLIED SURFACE SCIENCE PY:2013
TC:41 AU: Shi, Ruixia;Yang, Ping;Dong, Xiaobin;Ma, Qian;Zhang, Aiyu;
10:123:2 Controllable microwave and ultrasonic wave combined synthesis of ZnO micro-/nanostructures in HEPES solution and their shape-dependent photocatalytic activities
DOI:10.1016/j.jallcom.2013.03.077 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Li, Qin;Li, Hui;Wang, Runming;Li, Guangfang;Yang, Hao;Chen, Rong;
10:123:3 Fabrication of ordered flower-like ZnO nanostructures by a microwave and ultrasonic combined technique and their enhanced photocatalytic activity
DOI:10.1016/j.matlet.2011.07.049 JN:MATERIALS LETTERS PY:2011
TC:25 AU: Li, Hui;Liu, Er-tao;Chan, Frankie Y. F.;Lu, Zhong;Chen, Rong;
10:123:4 Optical properties and photocatalytic activities of spherical ZnO and flower-like ZnO structures synthesized by facile hydrothermal method
DOI:10.1016/j.jallcom.2013.05.183 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:15 AU: Fang, Yongling;Li, Zhongyu;Xu, Song;Han, Dandan;Lu, Dayong;
10:123:5 Room temperature chemical synthesis of flower-like ZnO nanostructures
DOI:10.1016/j.matlet.2011.10.018 JN:MATERIALS LETTERS PY:2012
TC:25 AU: Chakraborty, S.;Kole, A. K.;Kumbhakar, P.;
10:123:6 HEPES and polyol mediated solvothermal synthesis of hierarchical porous ZnO microspheres and their improved photocatalytic activity
DOI:10.1016/j.matlet.2014.05.092 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Li, Qin;Liu, Er-tao;Lu, Zhong;Yang, Hao;Chen, Rong;
10:123:7 ZnMnO diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, optical and magneto-optical properties
DOI:10.1016/j.apsusc.2013.09.177 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Savchuk, A. I.;Perrone, A.;Lorusso, A.;Stolyarchuk, I. D.;Savchuk, O. A.;Shporta, O. A.;
10:123:8 Synthesis of flower-like 3D ZnO microstructures and their size-dependent ethanol sensing properties
DOI:10.1016/j.ceramint.2011.09.055 JN:CERAMICS INTERNATIONAL PY:2012
TC:15 AU: Su, Xintai;Zhao, Hua;Xiao, Feng;Jian, Jikang;Wang, Jide;
10:123:9 Microwave-assisted synthesis of hierarchical ZnO nanostructures
DOI:10.1016/j.matlet.2013.08.119 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Tong, Laga;Liu, Ye;Rong, Hua;Gong, Liangfa;
10:123:10 Low temperature synthesis of single crystal ZnO microflower composed of hexagonal nanorods
DOI:10.1016/j.matlet.2013.05.104 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Amutha, R.;Lee, Gang-Juan;Repo, Eveliina;Sillanpaa, Mika;Wu, Jerry J.;
10:123:11 Fabrication and optical properties of ordered sea urchin-like ZnO nanostructures by a simple hydrothermal process
DOI:10.1016/j.matlet.2013.04.102 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Zhou, Yi;Liu, Ce;Li, Mengyao;Wu, Hongyan;Zhong, Xian;Li, Dang;Xu, Difa;
10:123:12 Properties of flower-like ZnO nanostructures synthesized using the chemical bath deposition
DOI:10.1016/j.mssp.2014.06.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Koao, L. F.;Dejene, F. B.;Swart, H. C.;
10:123:13 Drop shaped zinc oxide quantum dots and their self-assembly into dendritic nanostructures: Liquid assisted pulsed laser ablation and characterizations
DOI:10.1016/j.apsusc.2011.05.018 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Singh, Subhash C.;Gopal, Ram;
10:123:14 Hydrothermal synthesis of transition metal oxide nanomaterials in HEPES buffer solution
DOI:10.1016/j.matlet.2010.06.013 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Li, Hui;Lu, Zhong;Wu, Jiliang;Yu, Hui;Yu, Xianglin;Chen, Rong;
10:123:15 Synthesis and enhanced photocatalytic activity of 3D flowerlike ZnO microstructures on activated carbon fiber
DOI:10.1016/j.matlet.2014.03.029 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Chen, Guihua;Wang, Yong;Shen, Qianhong;Song, Yanjiang;Chen, Gangling;Yang, Hui;
10:124:1 Facile synthesis of porous ZnO microbelts and analysis of their gas-sensing property
DOI:10.1016/j.matchemphys.2013.12.050 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:2 AU: Huang, Jiarui;Shi, Chengcheng;Fu, Guijun;Sun, Pingping;Wang, Xinyue;Gu, Cuiping;
10:124:2 Simple fabrication and photocatalytic activity of ZnO particles with different morphologies
DOI:10.1016/j.powtec.2010.10.019 JN:POWDER TECHNOLOGY PY:2011
TC:55 AU: Xie, Juan;Li, Yanting;Zhao, Wei;Bian, Li;Wei, Yu;
10:124:3 Morphological Variation and Raman Spectroscopy of ZnO Hollow Microspheres Prepared by a Chemical Colloidal Process
DOI:10.1021/la904112j JN:LANGMUIR PY:2010
TC:32 AU: Lo, Shih-Shou;Huang, Dison;
10:124:4 Nanoporous ZnO film grown on sapphire by chemical vapor deposition
DOI:10.1016/j.matlet.2012.04.024 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Li, Zhenjun;Hu, Zuofu;Jiang, Li;Huang, Haigin;Liu, Fengjuan;Zhang, Xiqing;Wang, Yongsheng;Yin, Penggang;Guo, Lin;
10:124:5 Large-size porous ZnO flakes with superior gas-sensing performance
DOI:10.1063/1.4731876 JN:APPLIED PHYSICS LETTERS PY:2012
TC:22 AU: Wen, Wei;Wu, Jin-Ming;Wang, Yu-De;
10:124:6 Controllable synthesis of three-dimensional hierarchical porous ZnO film with mesoporous nanowalls
DOI:10.1016/j.matlet.2012.10.079 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Yan, Xiaoyan;Tong, Xili;Wang, Jian;Gong, Changwei;Zhang, Mingang;Liang, Liping;
10:124:7 Synthesis of ZnO hollow microspheres via an in-situ gas growth method
DOI:10.1016/j.powtec.2012.08.010 JN:POWDER TECHNOLOGY PY:2012
TC:4 AU: Yan, Yanxia;Liu, Qi;Wang, Jun;Ji, Lanyang;Jing, Xiaoyan;Li, Rumin;Liu, Lianhe;
10:124:8 Facile fabrication and enhanced gas sensing properties of the ultrathin ZnO nanoplates
DOI:10.1016/j.matlet.2014.06.015 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Wang, Shuangming;Wang, Pan;Xiao, Chuanhai;Li, Zhifang;Xiao, Bingxin;Zhao, Rui;Yang, Tianye;Zhang, Mingzhe;
10:124:9 Solvothermal synthesis of designed nonstoichiometric strontium titanate for efficient visible-light photocatalysis
DOI:10.1063/1.3486466 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Sulaeman, Uyi;Yin, Shu;Sato, Tsugio;
10:124:10 Synthesis of hierarchical porous ZnO microspheres and its photocatalytic deNO(x) activity
DOI:10.1016/j.ceramint.2012.03.007 JN:CERAMICS INTERNATIONAL PY:2012
TC:9 AU: Thi Hang Le;Quang Duc Truong;Kimura, Takeshi;Li, Huihui;Guo, Chongsen;Yin, Shu;Sato, Tsugio;Ling, Yong-Chien;
10:124:11 Novel ZnO parallel ordered arrays with lamellar structure: Fabrication and characterization
DOI:10.1016/j.matlet.2012.12.059 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Wang, Shuangming;Liu, Jinying;Cui, Guangliang;Yao, BinBin;Zhang, Mingzhe;
10:124:12 Optical and gas sensing properties of Al-doped ZnO transparent conducting films prepared by sol-gel method under different heat treatments
DOI:10.1016/j.ceramint.2014.02.090 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Liu, Xu;Pan, Kaimeng;Li, Weibo;Hu, Dan;Liu, Shuyang;Wang, Yude;
10:124:13 Hydrothermal synthesis of tubular ZnO materials
DOI:10.1016/j.matlet.2011.10.036 JN:MATERIALS LETTERS PY:2012
TC:13 AU: Li, Xiaobao;Dou, Wei;Bao, Ningzhong;
10:124:14 Influence of temperature on the morphology and photocatalytic activity of ZnGa2O4 crystallites prepared by hydrothermal method
DOI:10.1016/j.ceramint.2012.09.101 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Liu, Liangliang;Huang, Jianfeng;Cao, Liyun;Wu, Jianpeng;Fei, Jie;Ouyang, Haibo;Yao, Chunyan;
10:124:15 Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells
DOI:10.1016/j.apsusc.2012.07.082 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Kim, Doo-Soo;Park, Ji-Hyeon;Shin, Beom-Ki;Moon, Kyeong-Ju;Son, Myoungwoo;Ham, Moon-Ho;Lee, Woong;Myoung, Jae-Min;
10:124:16 Microwave-Assisted Hydrothermal Synthesis of Fe2O3-Sensitized SrTiO3 and its Luminescent Photocatalytic deNO(x) Activity with CaAl2O4:(Eu, Nd) Assistance
DOI:10.1111/jace.12206 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:4 AU: Li, Huihui;Yin, Shu;Wang, Yuhua;Sato, Tsugio;
10:124:17 Nano-ZnO/ZnO-HAPw prepared via sol-gel method and antibacterial activities of inorganic agents on six bacteria associated with oral infections
DOI:10.1007/s11051-014-2658-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:1 AU: Jin, Jianfeng;Liu, Wenying;Zhang, Wenyun;Chen, Qinghua;Yuan, Yanbo;Yang, Lidou;Wang, Qintao;
10:124:18 PbTe/Pb quasi-one-dimensional nanostructure material: controllable array synthesis and side branch formation by electrochemical deposition
DOI:10.1088/0957-4484/21/18/185302 JN:NANOTECHNOLOGY PY:2010
TC:4 AU: Zong, Zhaocun;Liu, Jinying;Hu, Tingting;Li, Dongdonng;Tian, Huifang;Liu, Chang;Zhang, Mingzhe;Zou, Guangtian;
10:125:1 Optical, electrical and morphological properties of p-type Mn-doped SnO2 nanostructured thin films prepared by sol-gel process
DOI:10.1007/s00339-012-6952-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:13 AU: Ghodsi, F. E.;Mazloom, J.;
10:125:2 Structural, morphological, and gas response properties of citrate gel synthesized nanocrystalline ZnO and Zn0.9Cd0.1O materials
DOI:10.1016/j.ceramint.2012.11.026 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Patil, J. Y.;Rajgure, A. V.;Bagal, L. K.;Pawar, R. C.;Mulla, I. S.;Suryavanshi, S. S.;
10:125:3 Effect of Mn doping on the structural and optical properties of SnO2 nanoparticles
DOI:10.1016/j.jallcom.2012.01.072 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:20 AU: Azam, Ameer;Ahmed, Arham S.;Habib, Sami S.;Naqvi, A. H.;
10:125:4 Raman spectra, photoluminescence and ferromagnetism of pure, Co and Fe doped SnO2 nanoparticles
DOI:10.1016/j.ceramint.2012.03.075 JN:CERAMICS INTERNATIONAL PY:2012
TC:18 AU: Kaur, Jasneet;Shah, Jyoti;Kotnala, R. K.;Verma, Kuldeep Chand;
10:125:5 Structural, morphological and gas sensing properties of undoped and Lanthanum doped nanocrystalline SnO2
DOI:10.1016/j.ceramint.2013.07.136 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Chikhale, L. P.;Paul, J. Y.;Rajgure, A. V.;Shaikh, F. I.;Mulla, I. S.;Suryavanshi, S. S.;
10:125:6 Synthesis, characterization and LPG response of Pd loaded Fe doped tin oxide thick films
DOI:10.1016/j.jallcom.2014.04.046 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Chikhale, L. P.;Patil, J. Y.;Rajgure, A. V.;Pawar, R. C.;Mulla, I. S.;Suryavanshi, S. S.;
10:125:7 Mn:SnO2 ceramics as p-type oxide semiconductor
DOI:10.1016/j.matlet.2010.11.021 JN:MATERIALS LETTERS PY:2011
TC:20 AU: Lee, Chil-Hyoung;Nam, Bo-Ae;Choi, Won-Kook;Lee, Jeon-Kook;Choi, Doo-Jin;Oh, Young-Jei;
10:125:8 Spectroscopic, microscopic, and electrical characterization of nanostructured SnO2:Co thin films prepared by sol-gel spin coating technique
DOI:10.1016/j.materresbull.2012.12.069 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:11 AU: Mazloom, J.;Ghodsi, F. E.;
10:125:9 Nanocrystalline Ce doped CoFe2O4 as an acetone gas sensor
DOI:10.1016/j.ceramint.2013.06.021 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Khandekar, M. S.;Tarwal, N. L.;Mulla, I. S.;Suryavanshi, S. S.;
10:125:10 Characterization of the p-type Sn1-x Mn (x) O-2 oxide semiconductor nanoparticles by Sol-Gel method
DOI:10.1007/s13391-012-2140-9 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:5 AU: Lee, Chil-Hyoung;Choi, Doo-Jin;Oh, Young-Jei;
10:125:11 Transparent bipolar resistive switching memory devices based on Mn doped SnO2 films
DOI:10.1016/j.jallcom.2014.02.145 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Wu, Xinghui;Xu, Zhimou;Zhao, Fei;Xu, Xiaohua;Liu, Binbing;Sun, Tangyou;Liu, Sisi;Zhao, Wenning;Ma, Zhichao;
10:125:12 Magnetic Properties of Mn-doped SnO2 Thin Films Prepared by the Sol-Gel Dip Coating Method for Dilute Magnetic Semiconductors
DOI:10.1111/jace.13084 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:2 AU: Lekshmy, Sivashankaran Nair Sujatha;Anitha, Vijayam Sukumaran Nair;Thomas, PuthenKadathil Vargehese;Joy, Kunjkunju;
10:125:13 A study on structural and optical properties of Mn- and Co-doped SnO2 nanocrystallites
DOI:10.1016/j.matchemphys.2010.08.029 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:19 AU: Sathyaseelan, B.;Senthilnathan, K.;Alagesan, T.;Jayavel, R.;Sivakumar, K.;
10:125:14 Structural, optical and electrical properties of Fe-doped SnO2 fabricated by sol-gel dip coating technique
DOI:10.1016/j.mssp.2010.03.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:14 AU: Soitah, Timonah N.;Yang, Chunhui;Sun, Liang;
10:125:15 Effect of Bi doping on structural, morphological, optical and ethanol vapor response properties of SnO2 nanoparticles
DOI:10.1016/j.mssp.2014.06.024 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Chikhale, L. P.;Patil, J. Y.;Shaikh, F. I.;Rajgure, A. V.;Pawar, R. C.;Mulla, I. S.;Suryavanshi, S. S.;
10:125:16 Structural, optical and morphological properties of La, Cu co-doped SnO2 nanocrystals by co-precipitation method
DOI:10.1016/j.optmat.2014.07.003 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Nilavazhagan, S.;Muthukumaran, S.;Ashokkumar, M.;
10:125:17 Influence of Pd-loading on gas sensing characteristics of SnO2 thick films
DOI:10.1016/j.ceramint.2012.02.073 JN:CERAMICS INTERNATIONAL PY:2012
TC:17 AU: Bagal, L. K.;Patil, J. Y.;Mulla, I. S.;Suryavanshi, S. S.;
10:125:18 Effect of La doping on microstructure of SnO2 nanopowders prepared by co-precipitation method
DOI:10.1016/j.jnoncrysol.2010.10.019 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:14 AU: Fu, Chong;Wang, Junbo;Yang, Minge;Su, Xiaolei;Xu, Jie;Jiang, Bailing;
10:125:19 Carbon dioxide sensitivity of La-doped thick film tin oxide gas sensor
DOI:10.1016/j.ceramint.2011.05.129 JN:CERAMICS INTERNATIONAL PY:2012
TC:8 AU: Kim, M. Y.;Choi, Y. N.;Bae, J. M.;Oh, T. S.;
10:125:20 Preparation of uniform 2D ZnO nanostructures by the ionic liquid-assisted sonochemical method and their optical properties
DOI:10.1016/j.ceramint.2013.12.119 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Sabbaghan, Maryam;Beheshtian, Javad;Mirsaeidi, Seyed Ali Mohammad;
10:125:21 Tin oxide thick film by doping rare earth for detecting traces of CO2: Operating in oxygen-free atmosphere
DOI:10.1016/j.materresbull.2013.12.057 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Xiong, Ya;Zhang, Guozhu;Zhang, Shunping;Zeng, Dawen;Xie, Changsheng;
10:126:1 Growth and physical properties of three-dimensional flower-like zinc oxide microcrystals
DOI:10.1016/j.ceramint.2011.08.028 JN:CERAMICS INTERNATIONAL PY:2012
TC:14 AU: Liang, Yuan-Chang;
10:126:2 Structure dependent luminescence evolution of c-axis-oriented ZnO nanofilms embedded with silver nanoparticles and clusters prepared by sputtering
DOI:10.1016/j.jallcom.2013.03.169 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Liang, Yuan-Chang;Deng, Xian-Shi;
10:126:3 Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer
DOI:10.1016/j.jallcom.2010.08.037 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:20 AU: Liang, Yuan-Chang;
10:126:4 Synthesis and substantially enhanced gas sensing sensitivity of homogeneously nanoscale Pd- and Au-particle decorated ZnO nanostructures
DOI:10.1016/j.jallcom.2014.01.167 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:13 AU: Liang, Yuan-Chang;Liao, Wen-Kai;Deng, Xian-Shi;
10:126:5 Effects of ultrathin layers on the growth of vertically aligned wurtzite ZnO nanostructures on perovskite single-crystal substrates
DOI:10.1016/j.apsusc.2012.08.072 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Liang, Yuan-Chang;Hu, Chia-Yen;Zhong, Hua;
10:126:6 Structural and optical properties of electrodeposited ZnO thin films on conductive RuO2 oxides
DOI:10.1016/j.jallcom.2010.12.059 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:12 AU: Liang, Yuan-Chang;Tsai, M. Y.;Huang, Chiem-Lum;Hu, Chia-Yen;Hwang, C. S.;
10:126:7 Microstructure evolution and optical properties of c-axis-oriented ZnO thin films incorporated with silver nanoisland layers
DOI:10.1016/j.ceramint.2013.07.060 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Liang, Yuan-Chang;Deng, Xian-Shi;
10:126:8 Structural and optoelectronic properties of transparent conductive c-axis-oriented ZnO based multilayer thin films with Ru interlayer
DOI:10.1016/j.ceramint.2011.10.076 JN:CERAMICS INTERNATIONAL PY:2012
TC:6 AU: Liang, Yuan-Chang;Deng, Xian-Shi;Zhong, Hua;
10:126:9 Microstructure and optical properties of electrodeposited Al-doped ZnO nanosheets
DOI:10.1016/j.ceramint.2011.05.154 JN:CERAMICS INTERNATIONAL PY:2012
TC:15 AU: Liang, Yuan-Chang;
10:126:10 Synthesis and structure-electrical response correlations of one-dimensional Barium Stannate-based heterostructure
DOI:10.1016/j.apsusc.2013.12.023 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Liang, Yuan-Chang;Liao, Wen-Kai;
10:126:11 Effect of annealing and room temperature sputtering power on optoelectronic properties of pure and Al-doped ZnO thin films
DOI:10.1016/j.ceramint.2012.07.022 JN:CERAMICS INTERNATIONAL PY:2013
TC:11 AU: Podobinski, D.;Zanin, S.;Pruna, A.;Pullini, D.;
10:126:12 Morphology and optical properties of ternary Zn-Sn-O semiconductor nanowires with catalyst-free growth
DOI:10.1016/j.jallcom.2012.04.041 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Liang, Yuan-Chang;Huang, Chiem-Lum;Hu, Chia-Yen;Deng, Xian-Shi;Zhong, Hua;
10:126:13 Characterization of nanostructured spinel zinc aluminate crystals on wurtzite zinc oxide template
DOI:10.1016/j.jcrysgro.2012.08.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Liang, Yuan-Chang;Hu, Chia-Yen;Deng, Xian-Shi;Zhong, Hua;Wu, Y. -J.;
10:126:14 Growth and structural characteristics of perovskite-wurtzite oxide ceramics thin films
DOI:10.1016/j.ceramint.2010.10.028 JN:CERAMICS INTERNATIONAL PY:2011
TC:3 AU: Liang, Yuan-Chang;
10:126:15 Fabrication of porous BaSnO3 hollow architectures using BaCO3@SnO2 core-shell nanorods as precursors
DOI:10.1016/j.apsusc.2010.06.064 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Li, Bi-Hui;Tang, Yi-Wen;Luo, Li-Juan;Xiao, Ting;Li, Da-Wei;Hu, Xiao-Yan;Yuan, Min;
10:126:16 Growth-temperature-dependent microstructure and ferromagnetic properties of perovskite manganite-based heterostructures
DOI:10.1016/j.ceramint.2010.07.025 JN:CERAMICS INTERNATIONAL PY:2010
TC:1 AU: Liang, Yuan-Chang;
10:126:17 Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering
DOI:10.1016/j.ceramint.2012.04.075 JN:CERAMICS INTERNATIONAL PY:2012
TC:4 AU: Balakrishnan, L.;Gowrishankar, S.;Gopalakrishnan, N.;
10:127:1 Microwave combustion synthesis, structural, optical and magnetic properties of Zn1-xCoAl2O4 (0 <= x <= 0.5) spinel nanostructures
DOI:10.1016/j.jallcom.2013.07.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Anand, G. Theophil;Kennedy, L. John;Vijaya, J. Judith;
10:127:2 Synthesis, characterization of nickel aluminate nanoparticles by microwave combustion method and their catalytic properties
DOI:10.1016/j.mseb.2014.01.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:7 AU: Ragupathi, C.;Vijaya, J. Judith;Kennedy, L. John;
10:127:3 Combustion synthesis, structure, magnetic and optical properties of cobalt aluminate spinel nanocrystals
DOI:10.1016/j.ceramint.2014.05.003 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Ragupathi, C.;Vijaya, J. Judith;Kennedy, L. John;Bououdina, M.;
10:127:4 Investigation on structural, optical and dielectric properties of Co doped ZnO nanoparticles synthesized by gel-combustion route
DOI:10.1016/j.mseb.2012.01.022 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:31 AU: Ansari, Sajid All;Nisar, Ambreen;Fatma, Bushara;Khan, Wasi;Naqvi, A. H.;
10:127:5 Synthesis of metal aluminate nanoparticles by sol-gel method and studies on their reactivity
DOI:10.1016/j.jallcom.2011.11.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:14 AU: Bayal, Nisha;Jeevanandam, P.;
10:127:6 Steam reforming of methane to syngas over NiAl2O4 spinel catalysts
DOI:10.1016/j.ijhydene.2010.11.071 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2011
TC:27 AU: Salhi, N.;Boulahouache, A.;Petit, C.;Kiennemann, A.;Rabia, C.;
10:127:7 High-resolution Al-27 MAS NMR spectroscopic studies of the response of spinel aluminates to mechanical action
DOI:10.1039/c0jm03721d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:14 AU: Sepelak, Vladimir;Bergmann, Ingo;Indris, Sylvio;Feldhoff, Armin;Hahn, Horst;Becker, Klaus Dieter;Grey, Clare P.;Heitjans, Paul;
10:127:8 Nickel-doped zinc aluminate oxides: starch-assisted synthesis, structural, optical properties, and their catalytic activity in oxidative coupling of methane
DOI:10.1007/s11051-013-1456-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:6 AU: Visinescu, Diana;Papa, Florica;Ianculescu, Adelina C.;Balint, Ioan;Carp, Oana;
10:127:9 Synthesis of NiAl2O4 with high surface area as precursor of Ni nanoparticles for hydrogen production
DOI:10.1016/j.ijhydene.2010.08.024 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2010
TC:15 AU: Ribeiro, Nielson F. P.;Neto, Raimundo C. R.;Moya, Silvia F.;Souza, Mariana M. V. M.;Schmal, Martin;
10:127:10 Co-doped willemite ceramic pigments: Technological behaviour, crystal structure and optical properties
DOI:10.1016/j.jeurceramsoc.2010.08.013 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:21 AU: Ozel, Emel;Yurdakul, Hilmi;Turan, Servet;Ardit, Matteo;Cruciani, Giuseppe;Dondi, Michele;
10:127:11 Enhancement of near infrared emission in La co-doped ZnO/Er nanoplates
DOI:10.1016/j.ceramint.2014.04.155 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Zamiri, Reza;Rebelo, Avito;Ahangar, Hossein Abastabar;Belsley, Michael Scott;Ferreira, J. M. F.;
10:127:12 Temperature dependence anomalous dielectric relaxation in Co doped ZnO nanoparticles
DOI:10.1016/j.materresbull.2012.08.079 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:11 AU: Ansari, Sajid Ali;Nisar, Ambreen;Fatma, Bushara;Khan, Wasi;Chaman, M.;Azam, Ameer;Naqvi, A. H.;
10:127:13 Eco-friendly combustion-based synthesis of metal aluminates MAl2O4 (M = Ni, Co)
DOI:10.1007/s11051-011-0392-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:14 AU: Tirsoaga, Alina;Visinescu, Diana;Jurca, Bogdan;Ianculescu, Adelina;Carp, Oana;
10:127:14 Cobalt and nickel aluminate spinels: Blue and cyan pigments
DOI:10.1016/j.ceramint.2013.10.081 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Gaudon, M.;Robertson, L. C.;Lataste, E.;Duttine, M.;Menetrier, M.;Demourgues, A.;
10:127:15 Electrical properties of Ag-doped ZnO nano-plates synthesized via wet chemical precipitation method
DOI:10.1016/j.ceramint.2013.08.120 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Zamiri, Reza;Singh, B. K.;Dutta, Dibakar;Reblo, Avito;Ferreira, J. M. F.;
10:127:16 Er doped ZnO nanoplates: Synthesis, optical and dielectric properties
DOI:10.1016/j.ceramint.2013.07.054 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Zamiri, Reza;Kaushal, Ajay;Rebelo, Avito;Ferreira, J. M. F.;
10:127:17 Effects of Co content and annealing temperature on the structure and optical properties of CoxMg1-xAl2O4 nanoparticles
DOI:10.1016/j.matchemphys.2012.10.016 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Duan, Xiulan;Wang, Xinqiang;Yu, Fapeng;Liu, Xitao;
10:127:18 Synthesis of nanosized (Zn1-xCox)Al2O4 spinels: New pink ceramic pigments
DOI:10.1016/j.materresbull.2011.10.024 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Fernandez-Osorio, A.;Pineda-Villanueva, E.;Chavez-Fernandez, J.;
10:127:19 Effects of rare-earth (Er, La and Yb) doping on morphology and structure properties of ZnO nanostructures prepared by wet chemical method
DOI:10.1016/j.ceramint.2013.06.034 JN:CERAMICS INTERNATIONAL PY:2014
TC:12 AU: Zamiri, Reza;Lemos, A. F.;Reblo, Avito;Ahangar, Hossein Abbastabar;Ferreira, J. M. F.;
10:127:20 Co-Doped Hardystonite, Ca-2(Zn,Co)Si2O7, a New Blue Ceramic Pigment
DOI:10.1111/j.1551-2916.2010.04203.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:6 AU: Dondi, Michele;Zanelli, Chiara;Ardit, Matteo;Cruciani, Giuseppe;
10:127:21 The effect of annealing temperature on the structure and optical properties of sol-gel derived nanocrystalline cobalt aluminate spinel
DOI:10.1016/j.matchemphys.2012.05.030 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:5 AU: Kurajica, S.;Popovic, J.;Tkalcec, E.;Grzeta, B.;Mandic, V.;
10:127:22 In situ formation of coloured M(II)-doped Zn2SiO4-willemite in ceramic glazes (M=Mn, Co, Ni, Cu)
DOI:10.1016/j.ceramint.2014.04.031 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Lavat, Araceli E.;Gayo, Griselda X.;
10:127:23 Manganese-promoted nickel/alumina catalysts for hydrogen production via auto-thermal reforming of ethanol
DOI:10.1016/j.ijhydene.2012.08.050 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:5 AU: Huang, Lihong;Zhang, Fangbai;Chen, Rongrong;Hsu, Andrew T.;
10:127:24 High yield synthesis of intrinsic, doped and composites of nano-zinc oxide using novel combinatorial method
DOI:10.1016/j.jcis.2011.12.020 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:2 AU: Singh, Nahar;Rashmi;Ahuja, Tarushee;Singh, Sukhvir;Pasricha, Renu;Haranath, D.;
10:128:1 Structural, optical, and electrical properties of Schottky diodes based on undoped and cobalt-doped ZnO nanorods prepared by RF-magnetron sputtering
DOI:10.1016/j.mseb.2013.06.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:4 AU: Al-Salman, Husam S.;Abdullah, M. J.;
10:128:2 Bulk compound synthesis and oxygen deficiency effect on electronic and magnetic properties of the Zn-based oxyarsenide LaZnAsO1-delta
DOI:10.1016/j.jallcom.2013.08.075 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Wang, Xia;Guo, Yanfeng;Li, Baoe;Tsujimoto, Yoshihiro;Yamaura, Kazunari;
10:128:3 The influence of layer thickness and post annealing on magnetism of pulsed laser deposited ZnO/Co multilayers
DOI:10.1016/j.jmmm.2013.06.015 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:0 AU: Wang, Zhanyong;Zhao, Hongyang;Yao, Qiwen;Xu, Jiayue;Kimura, Hideo;
10:128:4 The structure and optical properties of ZnO nanocrystals dependence on Co-doping levels
DOI:10.1016/j.jallcom.2010.05.183 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:25 AU: Wang, Sha;Li, Ping;Liu, Hui;Li, Jibiao;Wei, Yu;
10:128:5 Variation in structural, optical and magnetic properties of Zn1-xCrxO (x=0.0, 0.10, 0.15, and 0.20) nanoparticles: Role of dopant concentration on non-saturation of magnetization
DOI:10.1016/j.matchemphys.2010.09.075 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:10 AU: Bhargava, Richa;Sharma, Prashant K.;Chawla, Amit K.;Kumar, Sanjeev;Chandra, Ramesh;Pandey, Avinash C.;Kumar, Naresh;
10:128:6 Solution-based synthesis of cobalt-doped ZnO thin films
DOI:10.1016/j.tsf.2012.10.008 JN:THIN SOLID FILMS PY:2012
TC:14 AU: Vempati, Sesha;Shetty, Amitha;Dawson, P.;Nanda, K. K.;Krupanidhi, S. B.;
10:128:7 Ultralow-frequency photocurrent oscillation in ZnO nanowires
DOI:10.1063/1.3467457 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Liao, Zhi-Min;Zhang, Hong-Zhou;Yu, Da-Peng;
10:128:8 Influence of Co-doping on the thermal, structural, and optical properties of sol-gel derived ZnO nanoparticles
DOI:10.1016/j.matchemphys.2009.11.024 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:31 AU: Bhargava, Richa;Sharma, Prashant K.;Dutta, Ranu K.;Kumar, Sanjeev;Pandey, Avinash C.;Kumar, Naresh;
10:128:9 Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route
DOI:10.1016/j.materresbull.2010.06.011 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:12 AU: Freedsman, Joseph. J.;Kennedy, L. John;Kumar, R. Thinesh;Sekaran, G.;Vijaya, J. Judith;
10:128:10 Synthesis and characterization of Mn-doped ZnO nanorods grown in an ordered periodic honeycomb pattern using nanosphere lithography
DOI:10.1016/j.ceramint.2013.12.117 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Yilmaz, S.;Garry, S.;McGlynn, E.;Bacaksiz, E.;
10:128:11 Ab initio study of ZnCoO diluted magnetic semiconductor and its magnetic properties
DOI:10.1016/j.jallcom.2012.09.120 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Lardjane, S.;Merad, G.;Fenineche, N.;Billard, A.;Faraoun, H. I.;
10:128:12 Structure and deep ultraviolet emission of Co-doped ZnO films with Co3O4 nano-clusters
DOI:10.1016/j.matchemphys.2009.11.036 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:22 AU: Zhuge, L. J.;Wu, X. M.;Wu, Z. F.;Yang, X. M.;Chen, X. M.;Chen, Q.;
10:128:13 Cobalt-doped ZnO nanowires on quartz: Synthesis by simple chemical method and characterization
DOI:10.1016/j.jcrysgro.2012.01.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:14 AU: Vempati, Sesha;Shetty, Amitha;Dawson, P.;Nanda, Karunakar;Krupanidhi, S. B.;
10:128:14 Unusual photoresponse of indium doped ZnO/organic thin film heterojunction
DOI:10.1063/1.4704655 JN:APPLIED PHYSICS LETTERS PY:2012
TC:14 AU: Vempati, Sesha;Chirakkara, Saraswathi;Mitra, J.;Dawson, Paul;Nanda, Karuna Kar;Krupanidhi, S. B.;
10:128:15 Effect of alien cations on the growth mode and self-assemble fashion of ZnO nanostructures
DOI:10.1016/j.jallcom.2010.10.127 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Dong, Lihong;Liu, Yang;Zhuo, Yujiang;Chu, Ying;Wang, Yanping;
10:128:16 Microstructural, magnetic and optical characterizations of nanocrystalline Zn1-xMnxO dilute magnetic semiconductors synthesized by mechanical alloying
DOI:10.1016/j.jallcom.2011.12.132 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Sain, S.;Bhattacharjee, J.;Mukherjee, M.;Das, D.;Pradhan, S. K.;
10:128:17 Size and grain morphology dependent magnetic behaviour of Co-doped ZnO
DOI:10.1016/j.materresbull.2011.07.024 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:9 AU: Vagadia, Megha;Ravalia, Ashish;Khachar, Uma;Solanki, P. S.;Doshi, R. R.;Rayaprol, S.;Kuberkar, D. G.;
10:128:18 Co-substitution driven electronic structure modifications in Zn1-xCoxO
DOI:10.1016/j.jallcom.2014.04.213 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Vagadia, Megha;Ravalia, Ashish;Katba, Savan;Solanki, P. S.;Bapna, Komal;Kumar, Manish;Choudhary, R. J.;Phase, D. M.;Kuberkar, D. G.;
10:128:19 Structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method
DOI:10.1016/j.jmmm.2013.01.026 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:12 AU: Yang, Shenghong;Zhang, Yueli;
10:128:20 Synthesis of ZnO nanoflakes by the wet chemical method in the presence of Pb2+ alien cation and their structural and morphological properties
DOI:10.1016/j.matlet.2013.04.026 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Ramu, P.;Anbarasan, P. M.;Ramesh, R.;Ponnusamy, S.;Muthamizhchelvan, C.;
10:129:1 3D hierarchically porous ZnO structures and their functionalization by Au nanoparticles for gas sensors
DOI:10.1039/c0jm01800g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:137 AU: Liu, Xianghong;Zhang, Jun;Wang, Liwei;Yang, Taili;Guo, Xianzhi;Wu, Shihua;Wang, Shurong;
10:129:2 Synthesis of Nestlike ZnO Hierarchically Porous Structures and Analysis of Their Gas Sensing Properties
DOI:10.1021/am201476b JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:65 AU: Wang, Xinzhen;Liu, Wei;Liu, Jiurong;Wang, Fenglong;Kong, Jing;Qiu, Song;He, Cuizhu;Luan, Liqiang;
10:129:3 Porous ZnO microtubes with excellent cholesterol sensing and catalytic properties
DOI:10.1039/c2ta00107a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:21 AU: Giri, Arnab Kanti;Sinhamahapatra, Apurba;Prakash, S.;Chaudhari, Jayesh;Shahi, Vinod Kumar;Panda, Asit Baran;
10:129:4 An amperometric cholesterol biosensor with excellent sensitivity and limit of detection based on an enzyme-immobilized microtubular ZnO@ZnS heterostructure
DOI:10.1039/c4ta03627a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:3 AU: Giri, Arnab Kanti;Charan, Chumki;Saha, Arka;Shahi, Vinod Kumar;Panda, Asit Baran;
10:129:5 A rapid and green synthetic approach for hierarchically assembled porous ZnO nanoflakes with enhanced catalytic activity
DOI:10.1039/c2jm32998k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:20 AU: Sinhamahapatra, Apurba;Giri, Arnab Kanti;Pal, Provas;Pahari, Sandip Kumar;Bajaj, Hari C.;Panda, Asit Baran;
10:129:6 Improving the ethanol gas-sensing properties of porous ZnO microspheres by Co doping
DOI:10.1016/j.materresbull.2013.04.025 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Xiao, Qi;Wang, Tao;
10:129:7 Hierarchically order porous lotus shaped nano-structured MnO2 through MnCO3: chelate mediated growth and shape dependent improved catalytic activity
DOI:10.1039/c3ta11440f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:13 AU: Pal, Provas;Pahari, Sandip K.;Giri, Arnab Kanti;Pal, Sagar;Bajaj, Hari C.;Panda, Asit Baran;
10:129:8 Stress induction, UV emission variation and efficiency variation in dye-sensitized solar cells of hollow ZnS/ZnO/ZnS nanostructures
DOI:10.1039/c3ta12213a JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:4 AU: Lo, Shih-Shou;Hung, Yi Ting;Jan, Der Jun;
10:129:9 Highly efficient ZnO porous nanostructure for CdS/CdSe quantum dot sensitized solar cell
DOI:10.1016/j.tsf.2013.10.009 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Raj, C. Justin;Karthick, S. N.;Hemalatha, K. V.;Kim, Hee-Je;Prabakar, K.;
10:129:10 Controlled synthesis of Eu2+-doped barium silicate nanostructures and their optical properties
DOI:10.1016/j.ceramint.2012.02.095 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Lu, Zhengwu;Weng, Luqian;Song, Shenhua;Zhang, Peixin;Luo, Xiongbiao;Ren, Xiangzhong;
10:130:1 Unexpected magnetism in nanomaterials
DOI:10.1016/j.jmmm.2013.07.005 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:12 AU: Singh, Ranber;
10:130:2 d(0) ferromagnetism in undoped sphalerite ZnS nanoparticles
DOI:10.1063/1.3622303 JN:APPLIED PHYSICS LETTERS PY:2011
TC:23 AU: Gao, Daqiang;Yang, Guijin;Zhang, Jing;Zhu, Zhonghua;Si, Mingsu;Xue, Desheng;
10:130:3 Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering
DOI:10.1016/j.jallcom.2013.09.214 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Luo, J. T.;Li, Y. Z.;Kang, X. Y.;Zeng, F.;Pan, F.;Fan, P.;Jiang, Z.;Wang, Y.;
10:130:4 First-principles prediction of half-metallic ferromagnetism in Cu-doped ZnS
DOI:10.1063/1.3309771 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:34 AU: Zhang, Chang-wen;Yan, Shi-shen;
10:130:5 Self- Assembled Platinum Nanochain Networks Driven by Induced Magnetic Dipoles
DOI:10.1002/adfm.201302262 JN:ADVANCED FUNCTIONAL MATERIALS PY:2014
TC:9 AU: Gao, Min-Rui;Zhang, Shi-Ran;Xu, Yun-Fei;Zheng, Ya-Rong;Jiang, Jun;Yu, Shu-Hong;
10:130:6 Structure and magnetic characteristics of Si-doped AlN films
DOI:10.1016/j.jallcom.2011.12.015 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:11 AU: Pan, D.;Jian, J. K.;Sun, Y. F.;Wu, R.;
10:130:7 Structure and magnetic properties of Ni-doped AlN films
DOI:10.1063/1.4749408 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Pan, D.;Jian, J. K.;Ablat, A.;Li, J.;Sun, Y. F.;Wu, R.;
10:130:8 Ferromagnetism of Pt nanoparticles induced by surface chemisorption
DOI:10.1103/PhysRevB.83.104420 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: Sakamoto, Yasuhiro;Oba, Yojiro;Maki, Hideyuki;Suda, Masayuki;Einaga, Yasuaki;Sato, Tetsuya;Mizumaki, Masaichiro;Kawamura, Naomi;Suzuki, Motohiro;
10:130:9 Ab initio investigation of local magnetic structures around substitutional 3d transition metal impurities at cation sites in III-Vand II-VI semiconductors
DOI:10.1016/j.jmmm.2009.09.034 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:18 AU: Singh, Ranber;
10:130:10 A study on the magnetic properties of carbon-doped (1 1 (2)over-bar 0) ZnO thin films
DOI:10.1016/j.jmmm.2010.11.055 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:9 AU: Shi, Li-Bin;Yuan, Hong-Kuan;
10:130:11 The origin of ferromagnetism in Pd-doped CdS
DOI:10.1016/j.jmmm.2012.02.006 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Ren, Miaojuan;Zhang, Changwen;Li, Ping;Song, Zedong;Liu, Xiaojiang;
10:130:12 Local electronic structure of Cu-doped GaN investigated by XANES and x-ray linear dichrosim
DOI:10.1103/PhysRevB.84.155206 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Schuber, R.;Ganz, P. R.;Wilhelm, F.;Rogalev, A.;Schaadt, D. M.;
10:130:13 Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayers
DOI:10.1116/1.3271335 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Zeng, F.;Fan, B.;Yang, Y. C.;Yang, P. Y.;Luo, J. T.;Chen, C.;Pan, F.;Yan, W. S.;
10:130:14 Fabrication of ZnS:Cr nanoparticles with superparamagnetism and fluorescence properties
DOI:10.1016/j.matlet.2013.06.106 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Chawla, Santa;Sharma, Simmi;Shah, Jyoti;
10:130:15 Magnetic properties of Cu-doped GaN grown by molecular beam epitaxy
DOI:10.1103/PhysRevB.85.165204 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Ganz, Philipp R.;Fischer, Gerda;Suergers, Christoph;Schaadt, Daniel M.;
10:130:16 Symmetry and electronic states of Mn2+ in ZnS nanowires with mixed hexagonal and cubic stacking
DOI:10.1063/1.3475017 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Chen, Li;Kirilenko, Demid;Stesmans, Andre;Nguyen, Xuan Sang;Binnemans, Koen;Goderis, Bart;Vanacken, Johan;Lebedev, Oleg;Van Tendeloo, Gustaaf;Moshchalkov, Victor V.;
10:130:17 Half-metallic ferromagnetism in zinc-blende (CaX)(1)/(YX)(1) (001)(Y = Al, Ga, and In; X = N, P, and As) superlattices: A first-principles study
DOI:10.1016/j.commatsci.2013.12.031 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:3 AU: Song, Xiao-Sheng;Dong, Shengjie;Zhao, Hui;
10:130:18 Cluster and Thickness Dependence of Ferromagnetism in Nickel In Situ-Doped Amorphous AlN Thin Films
DOI:10.1007/s11664-013-2493-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Tanaka, H.;Jadwisienczak, W. M.;Kaya, S.;Chen, G.;Wan, C.;Kordesch, M. E.;
10:131:1 Transparent and crystalline Al-doped ZnO film-embedded heterojunction Si solar cell
DOI:10.1016/j.matlet.2012.01.144 JN:MATERIALS LETTERS PY:2012
TC:25 AU: Kim, Joondong;Yun, Ju-Hyung;Park, Yun Chang;Anderson, Wayne A.;
10:131:2 Effect of different concentration Li-doping on the morphology, defect and photovoltaic performance of Li-ZnO nanofibers in the dye-sensitized solar cells
DOI:10.1016/j.matchemphys.2013.09.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:5 AU: Bhattacharjee, Ripon;Hung, I-Ming;
10:131:3 Characterization of ZnO/polyaniline nanocomposites prepared by using surfactant solutions as polymerization media
DOI:10.1002/app.35502 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:5 AU: Alves, Kleber G. B.;Felix, Jorlandio F.;de Melo, Etelino F.;dos Santos, Clecio G.;Andrade, Cesar A. S.;de Melo, Celso P.;
10:131:4 Optical and Electrical Studies of Polyaniline/ZnO Nanocomposite
DOI:10.1155/2013/157810 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:5 AU: Alam, Manawwer;Alandis, Naser M.;Ansari, Anees A.;Shaik, Mohammed Rafi;
10:131:5 Preparation of a high-activity ZnO/TiO2 photocatalyst via homogeneous hydrolysis method with low temperature crystallization
DOI:10.1016/j.matlet.2010.05.054 JN:MATERIALS LETTERS PY:2010
TC:39 AU: Zhang, Maolin;An, Taicheng;Liu, Xiaolu;Hu, Xiaohong;Sheng, Guoying;Fu, Jiamo;
10:131:6 Rapid mass production of ZnO nanowires by a modified carbothermal reduction method
DOI:10.1016/j.matlet.2010.12.032 JN:MATERIALS LETTERS PY:2011
TC:15 AU: Zhou, Zhihua;Zhan, Changhua;Wang, Yanyan;Su, Yanjie;Yang, Zhi;Zhang, Yafei;
10:131:7 The inter-metallic oxide of ZnO/ITO/ZnO tri-layer films using a heat-induced diffusion mechanism
DOI:10.1016/j.apsusc.2013.02.084 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Chen, Kuan-Jen;Hung, Fei-Yi;Lui, Truan-Sheng;Chang, Sheng-Po;Wang, Wen-Lung;
10:131:8 Current-voltage characterization of Au contact on sol-gel ZnO films with and without conducting polymer
DOI:10.1016/j.apsusc.2010.01.080 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Lin, Yow-Jon;Jheng, Mei-Jyuan;Zeng, Jian-Jhou;
10:131:9 Self-assembled, wrinkled zinc oxide for enhanced solar cell performances
DOI:10.1016/j.matlet.2014.01.180 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Bu, Ian Y. Y.;
10:131:10 Microstructured ZnO photoelectrode grown on the sputter-deposited ZnO passivating-layer for improving the photovoltaic performances
DOI:10.1016/j.matchemphys.2010.07.052 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:15 AU: Hossain, M. F.;Takahashi, T.;
10:131:11 Crystalline-Si photovoltaic devices with ZnO nanowires
DOI:10.1016/j.solmat.2011.11.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:16 AU: Hsueh, Ting-Jen;Lin, Siou-Yi;Weng, Wen-Yin;Hsu, Cheng-Liang;Tsai, Tsung-Ying;Dai, Bau-Tong;Shieh, Jia-Min;
10:131:12 The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films
DOI:10.1016/j.apsusc.2011.09.056 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Chen, K. J.;Hung, F. Y.;Chang, S. J.;Liao, J. D.;Weng, C. C.;Hu, Z. S.;
10:131:13 Titania/zinc oxide nanocomposite coatings on glass or quartz substrate for photocatalytic degradation of direct blue 71
DOI:10.1016/j.apsusc.2012.03.042 JN:APPLIED SURFACE SCIENCE PY:2012
TC:14 AU: Habibi, Mohammad Hossein;Mikhak, Maryam;
10:131:14 Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide
DOI:10.1063/1.4704686 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Sun, Jian;Lai, Weng Soon;Gong, Hao;
10:131:15 Preparation and Characterization of PS-PMMA/ZnO Nanocomposite Films with Novel Properties of High Transparency and UV-Shielding Capacity
DOI:10.1002/app.32530 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:14 AU: Ge, Junlin;Zeng, Xiaofei;Tao, Xia;Li, Xue;Shen, Zhigang;Yun, Jimmy;Chen, Jianfeng;
10:131:16 Organometallic Route to Surface-Modified ZnO Nanoparticles Suitable for In Situ Nanocomposite Synthesis: Bound Carboxylate Stoichiometry Controls Particle Size or Surface Coverage
DOI:10.1021/cm300058d JN:CHEMISTRY OF MATERIALS PY:2012
TC:8 AU: Orchard, Katherine L.;Shaffer, Milo S. P.;Williams, Charlotte K.;
10:131:17 Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures
DOI:10.1016/j.tsf.2010.12.243 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Ji, Le-chun;Huang, Lei;Liu, Yang;Xie, Yi-qun;Liu, Feng;Liu, Ai-yun;Shi, Wang-zhou;
10:131:18 Photoactive curcumin-derived dyes with surface anchoring moieties used in ZnO nanoparticle-based dye-sensitized solar cells
DOI:10.1016/j.matchemphys.2010.03.062 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:6 AU: Ganesh, T.;Kim, Jong Hoon;Yoon, Seog Joon;Kil, Byung-Ho;Maldar, N. N.;Han, Jin Wook;Han, Sung-Hwan;
10:131:19 Metal silicide-templated growth of quality Si films for Schottky-diodes
DOI:10.1016/j.tsf.2010.01.049 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Kim, Joondong;Yi, Junsin;Anderson, Wayne A.;
10:132:1 Structural, optical and magnetic properties of Co-doped ZnO nanorods prepared by hydrothermal method
DOI:10.1016/j.jallcom.2013.04.011 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Shi, Shaobo;Yang, Yu;Xu, Jianping;Li, Lan;Zhang, Xiaosong;Hu, Guo-Hua;Dang, Zhi-Min;
10:132:2 High temperature ferromagnetism and optical properties of Co doped ZnO nanoparticles
DOI:10.1063/1.3500380 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:40 AU: Pal, Bappaditya;Giri, P. K.;
10:132:3 Structural, optical, and magnetic properties of Co-doped ZnO nanorods fabricated by a facile solution route
DOI:10.1016/j.jallcom.2011.11.112 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:20 AU: Hao, Hongjing;Qin, Mei;Li, Ping;
10:132:4 Room temperature ferromagnetism with high magnetic moment and optical properties of Co doped ZnO nanorods synthesized by a solvothermal route
DOI:10.1016/j.jallcom.2014.06.087 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Pal, Bappaditya;Dhara, Soumen;Giri, P. K.;Sarkar, D.;
10:132:5 Influence of Co doping on the structural, optical and magnetic properties of ZnO nanocrystals
DOI:10.1016/j.jallcom.2013.06.015 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:14 AU: Kaushik, A.;Dalela, B.;Rathore, R.;Vats, V. S.;Choudhary, B. L.;Alvi, P. A.;Kumar, Sudhish;Dalela, S.;
10:132:6 Lattice, band, and spin engineering in Zn1-xCoxO
DOI:10.1063/1.4804656 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Matsui, Hiroaki;Tabata, Hitoshi;
10:132:7 Morphology and optical properties of Co doped ZnO textured thin films
DOI:10.1016/j.jallcom.2011.06.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Wang, Tao;Liu, Yanmei;Fang, Qingqing;Xu, Yangguang;Li, Guang;Sun, Zhaoqi;Wu, Mingzai;Li, Junlei;He, Hao;
10:132:8 Photoluminescence quenching in cobalt doped ZnO nanocrystals
DOI:10.1063/1.4710533 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:12 AU: Yamamoto, Sekika;
10:132:9 Carrier recombination process and magneto-photoluminescence in Zn1-xCoxO layers
DOI:10.1063/1.3455854 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Xiao, Zhiyan;Matsui, Hiroaki;Katayama, Kouichi;Miyajima, Kensuke;Itoh, Tadashi;Tabata, Hitoshi;
10:132:10 Physical structure and optical properties of Co-doped ZnO nanoparticles prepared by co-precipitation
DOI:10.1007/s11051-013-2030-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: He, Rongliang;Tang, Bin;Ton-That, Cuong;Phillips, Matthew;Tsuzuki, Takuya;
10:132:11 Gd3+ incorporated ZnO nanoparticles: A versatile material
DOI:10.1016/j.materresbull.2013.12.031 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:3 AU: Kumar, Surender;Sahare, P. D.;
10:132:12 Structural, optical, vibrational, and magnetic properties of sol-gel derived Ni doped ZnO nanoparticles
DOI:10.1063/1.4813868 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Srinet, Gunjan;Kumar, Ravindra;Sajal, Vivek;
10:132:13 The structural and magnetic properties of Co+ implanted ZnO films
DOI:10.1016/j.apsusc.2014.03.085 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Guner, S.;Gurbuz, O.;Caliskan, S.;Nuzhdin, V. I.;Khaibullin, R.;Ozturk, M.;Akdogan, N.;
10:132:14 Carrier recombination process and magneto-photoluminescence in Zn1-xCoxO layers (vol 108, 013502, 2010)
DOI:10.1063/1.3474903 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:0 AU: Xiao, Zhiyan;Matsui, Hiroaki;Katayama, Kouichi;Miyajima, Kensuke;Itoh, Tadashi;Tabata, Hitoshi;
10:132:15 Flux growth of ZnO crystals doped by transition metals
DOI:10.1016/j.jcrysgro.2010.11.148 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Sofer, Zdenek;Sedmidubsky, David;Huber, Stepan;Hejtmanek, Jiri;Marysko, Miroslav;Jurek, Karel;Mikulics, Martin;
10:132:16 Local investigation of hyperfine interactions in pure and Co-doped ZnO
DOI:10.1016/j.jmmm.2009.06.051 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:8 AU: Mercurio, M. E.;Carbonari, A. W.;Cordeiro, M. R.;Saxena, R. N.;D'Agostino, L. Z.;
10:133:1 Controllable growth of well-aligned ZnO nanorod arrays by low-temperature wet chemical bath deposition method
DOI:10.1016/j.apsusc.2009.09.097 JN:APPLIED SURFACE SCIENCE PY:2010
TC:63 AU: Li, Qingwei;Bian, Jiming;Sun, Jingchang;Wang, Jingwei;Luo, Yingmin;Sun, Kaitong;Yu, Dongqi;
10:133:2 Optical, electrical and structural properties of nano-pyramidal ZnO films grown on glass substrate by spray pyrolysis technique
DOI:10.1016/j.optmat.2014.02.012 JN:OPTICAL MATERIALS PY:2014
TC:5 AU: Bedia, A.;Bedia, F. Z.;Aillerie, M.;Maloufi, N.;Hamady, S. Ould Saad;Perroud, O.;Benyoucef, B.;
10:133:3 Optical and structural properties of nanostructured ZnO thin films deposited onto FTO/glass substrate by a solution-based technique
DOI:10.1016/j.optmat.2013.08.018 JN:OPTICAL MATERIALS PY:2013
TC:7 AU: Berruet, M.;Pereyra, C. J.;Mhlongo, G. H.;Dhlamini, M. S.;Hillie, K. T.;Vazquez, M.;Marotti, R. E.;
10:133:4 Lateral growth and optical properties of ZnO microcrystal on sapphire substrate
DOI:10.1016/j.optmat.2012.05.033 JN:OPTICAL MATERIALS PY:2012
TC:1 AU: Li, Zhenjun;Hu, Zuofu;Liu, Fengjuan;Hang, Haiqin;Zhang, Xiqing;Wang, Yongsheng;Jiang, Li;Yin, Penggang;Guo, Lin;
10:133:5 Investigation of ZnO nanorods synthesized by a solvothermal method, using Al-doped ZnO seed films
DOI:10.1016/j.optmat.2011.10.013 JN:OPTICAL MATERIALS PY:2012
TC:21 AU: Ye, Nan;Chen, Chang Chun;
10:133:6 Effects of annealing temperature on photoluminescence of ZnO nanorods hydrothermally grown on a ZnO:Al seed layer
DOI:10.1016/j.optmat.2013.08.002 JN:OPTICAL MATERIALS PY:2013
TC:6 AU: Sui, Chenghua;Lu, Zhong;Xu, Tianning;
10:133:7 Annealing induced reorientation of crystallites in Sn doped ZnO films
DOI:10.1016/j.optmat.2014.04.045 JN:OPTICAL MATERIALS PY:2014
TC:4 AU: Ravichandran, K.;Vasanthi, M.;Thirumurugan, K.;Sakthivel, B.;Karthika, K.;
10:133:8 A novel fabrication of MEH-PPV/Al:ZnO nanorod arrays based ordered bulk heterojunction hybrid solar cells
DOI:10.1016/j.apsusc.2013.01.119 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Malek, M. F.;Sahdan, M. Z.;Mamat, M. H.;Musa, M. Z.;Khusaimi, Z.;Husairi, S. S.;Sin, N. D. Md;Rusop, M.;
10:133:9 Optical and structural characterization of solution processed zinc oxide nanorods via hydrothermal method
DOI:10.1016/j.ceramint.2014.02.098 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Chee, Ching Yern;Nadarajah, Kalyani;Siddiqui, Mohammad Khalid;Wong, Yhoong;
10:133:10 Bottom-up grown ZnO nanorods for an antireflective moth-eye structure on CuInGaSe2 solar cells
DOI:10.1016/j.solmat.2011.05.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:22 AU: Shin, Beom-Ki;Lee, Tae-Il;Xiong, Junjie;Hwang, Changhun;Noh, Gapseong;Cho, Joong-Hwee;Myoung, Jae-Min;
10:133:11 Performance of polymer/ZnO hybrid photovoltaic devices determined by reaction time for oriented ZnO nanorod growth
DOI:10.1016/j.tsf.2010.11.033 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Guo, Ying;Geng, Hongwei;
10:133:12 Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases
DOI:10.1016/j.tsf.2013.12.004 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Jin, J. D.;Luo, Y.;Bao, P.;Brox-Nilsen, C.;Potter, R.;Song, A. M.;
10:133:13 Color-tunable photoluminescence in Bi3.6Eu0.4Ti3O12/ZnO nanorods composite
DOI:10.1016/j.ceramint.2012.10.123 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: Zhou, Xiaoye;Wu, Guangheng;Zhou, Hong;Qin, Ni;Bao, Dinghua;
10:133:14 Playing with Dimensions: Rational Design for Heteroepitaxial p-n Junctions
DOI:10.1021/nl202963z JN:NANO LETTERS PY:2012
TC:7 AU: Lee, Tae Il;Lee, Sang Hoon;Kim, Young-Dong;Jang, Woo Soon;Oh, Jin Young;Baik, Hong Koo;Stampfl, Catherine;Soon, Aloysius;Myoung, Jae Min;
10:133:15 Silver Thin Film as a Temporal Template and Dopant Source for Vertically Aligned p-n homojunction of ZnO Nanorods
DOI:10.1021/am504587x JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Park, Ji-Hyeon;Lee, Tae Il;Hwang, Sung-Hwan;Myoung, Jae-Min;
10:133:16 Chemically assisted vapour transport for bulk ZnO crystal growth
DOI:10.1016/j.jcrysgro.2010.08.046 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Santailler, Jean-Louis;Audoin, Claire;Chichignoud, Guy;Obrecht, Remy;Kaouache, Belkhiri;Marotel, Pascal;Pelenc, Denis;Brochen, Stephane;Merlin, Jeremy;Bisotto, Isabelle;Granier, Carole;Feuillet, Guy;Levy, Francois;
10:133:17 Influence of ammonia, lithium hydroxide, and hexamine on ZnO films synthesized by successive ionic layer adsorption and reaction technique
DOI:10.1007/s10853-012-6982-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:0 AU: Murali, K. V.;Ragina, A. J.;Preetha, K. C.;Deepa, K.;Remadevi, T. L.;
10:134:1 Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering
DOI:10.1016/j.apsusc.2011.09.088 JN:APPLIED SURFACE SCIENCE PY:2011
TC:21 AU: Wang, Szu-Ko;Lin, Ting-Chun;Jian, Sheng-Rui;Juang, Jenh-Yih;Jang, Jason S. -C.;Tseng, Jiun-Yi;
10:134:2 Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films
DOI:10.1016/j.apsusc.2011.04.088 JN:APPLIED SURFACE SCIENCE PY:2011
TC:15 AU: Yen, C. -Y.;Jian, S. -R.;Chen, G. -J.;Lin, C. -M.;Lee, H. -Y.;Ke, W. -C.;Liao, Y. -Y.;Yang, P. -F.;Wang, C. -T.;Lai, Y. -S.;Jang, Jason S. -C.;Juang, J. -Y.;
10:134:3 Deformation behaviors of InP pillars under uniaxial compression
DOI:10.1063/1.4758479 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Jian, Sheng-Rui;Sung, T. -H.;Huang, J. C.;Juang, Jenh-Yih;
10:134:4 Yielding and plastic slip in ZnO
DOI:10.1063/1.4720169 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Sung, T. H.;Huang, J. C.;Hsu, J. H.;Jian, S. R.;Nieh, T. G.;
10:134:5 Mechanical responses of single-crystal ZnO
DOI:10.1016/j.jallcom.2009.11.142 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:14 AU: Jian, Sheng-Rui;
10:134:6 Nanoindentation-induced interfacial fracture of ZnO thin films deposited on Si(111) substrates by atomic layer deposition
DOI:10.1016/j.jallcom.2013.10.213 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Jian, Sheng-Rui;Lee, Ya-Hui;
10:134:7 Berkovich nanoindentation-induced dislocation energetics and pop-in effects in ZnSe thin films
DOI:10.1016/j.jallcom.2013.12.103 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Jian, Sheng-Rui;Lin, Ya-Yun;
10:134:8 Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire
DOI:10.1155/2012/914184 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:7 AU: Jian, Sheng-Rui;Juang, Jenh-Yih;
10:134:9 Mechanical response of GaN film and micropillar under nanoindentation and microcompression
DOI:10.1063/1.3506498 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Sung, T. H.;Huang, J. C.;Hsu, J. H.;Jian, S. R.;
10:134:10 Cathodoluminescence rosettes in c-plane GaN films under Berkovich nanoindentation
DOI:10.1016/j.optmat.2013.08.011 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Jian, Sheng-Rui;
10:134:11 Trajectory effect on the properties of large area ZnO thin films deposited by atmospheric pressure plasma jet
DOI:10.1016/j.apsusc.2014.05.220 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Juang, Jia-Yang;Chou, Tung-Sheng;Lin, Hsin-Tien;Chou, Yuan-Fang;Weng, Chih-Chiang;
10:134:12 Nanomechanical properties of GaSe thin films deposited on Si(111) substrates by pulsed laser deposition
DOI:10.1016/j.jallcom.2012.07.089 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Jian, Sheng-Rui;Juang, Jenh-Yih;Luo, Chih-Wei;Ku, Shin-An;Wu, Kaung-Hsiung;
10:134:13 Nanoindentation of Mg-doped AlGaN thin films
DOI:10.1016/j.jallcom.2013.12.222 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Huang, Chih-Yen;Hsieh, Pei-Ju;Chen, I-Chen;Ke, Wen-Cheng;Yang, Ping-Feng;Jian, Sheng-Rui;
10:134:14 Mechanical response of polar/non-polar ZnO under low dimensional stress
DOI:10.1063/1.4811554 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Sung, T. H.;Huang, J. C.;Chen, H. C.;
10:134:15 Effects of annealing ambience on ZnO:N films grown by MOCVD and the p-type doping mechanism of ZnO:N films investigated by XANES
DOI:10.1016/j.apsusc.2010.08.112 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Li, Qingwei;Bian, Jiming;Sun, Jingchang;Liang, Hongwei;Zou, Chongwen;Sun, Yinglan;Luo, Yingmin;
10:134:16 Nanoindentation responses of InN thin films
DOI:10.1016/j.jallcom.2014.04.128 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Jian, Sheng-Rui;Huang, Chih-Yen;Ke, Wen-Cheng;
10:134:17 Deformation behavior of nanostructured ZnO films on glass
DOI:10.1016/j.tsf.2011.10.150 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Zabels, Roberts;Muktepavela, Faina;Grigorjeva, Larisa;
10:134:18 Cross-sectional transmission electron microscopy studies for deformation behaviors of AlN thin films under Berkovich nanoindentation
DOI:10.1016/j.jallcom.2010.02.050 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:4 AU: Jian, Sheng-Rui;Chen, G. -J.;Chen, H. -G.;Jang, Jason S. -C.;Liao, Y. -Y.;Yang, P. -F.;Lai, Y. -S.;Chen, M. -R.;Kao, H. -L.;Juang, J. -Y.;
10:134:19 Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films
DOI:10.1016/j.matchemphys.2012.07.060 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Ke, Wen-Cheng;Jian, Sheng-Rui;Chen, I-Chen;Jang, Jason S. -C.;Chen, Wei-Kuo;Juang, Jenh-Yih;
10:135:1 Microwave assisted hydrothermal synthesis of single crystalline ZnO nanorods for gas sensor application
DOI:10.1016/j.matlet.2011.10.029 JN:MATERIALS LETTERS PY:2012
TC:43 AU: Rai, Prabhakar;Song, Hyeon-Min;Kim, Yun-Su;Song, Min-Kyung;Oh, Pyong-Rok;Yoon, Jeong-Mo;Yu, Yeon-Tae;
10:135:2 Gas-sensing property improvement of ZnO by hierarchical flower-like architectures
DOI:10.1016/j.matlet.2011.07.059 JN:MATERIALS LETTERS PY:2011
TC:34 AU: Guo, Weiwei;Liu, Tianmo;Zeng, Wen;Liu, Dejun;Chen, Yong;Wang, Zhongchang;
10:135:3 Synthesis of unique ZnO/SnO2 core-shell structural microspheres and their gas-sensing properties
DOI:10.1016/j.matlet.2012.08.055 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Guo, Weiwei;Liu, Tianmo;Sun, Rong;Chen, Yong;Zeng, Wen;Wang, Zhongchang;
10:135:4 Self-assembly of ZnO nanosheets into flower-like architectures and their gas sensing properties
DOI:10.1016/j.matlet.2013.08.118 JN:MATERIALS LETTERS PY:2013
TC:14 AU: Chen, Xiaoshuang;Liu, Jingyuan;Jing, Xiaoyan;Wang, Jun;Song, Dalei;Liu, Lianhe;
10:135:5 Hierarchical ZnO porous microspheres and their gas-sensing properties
DOI:10.1016/j.ceramint.2013.01.014 JN:CERAMICS INTERNATIONAL PY:2013
TC:5 AU: Guo, Weiwei;Liu, Tianmo;Wang, Jinxing;Yu, Weijie;Sun, Rong;Chen, Yong;Hussain, Shahid;Peng, Xianghe;Wang, Zhongchang;
10:135:6 High sensing properties of Ce-doped alpha-Fe2O3 nanotubes to acetone
DOI:10.1016/j.ceramint.2013.08.011 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Liu, Changbai;Shan, Hao;Liu, Li;Li, Shouchun;Li, Haiying;
10:135:7 Acetone sensing characteristics of ZnO hollow spheres prepared by one-pot hydrothermal reaction
DOI:10.1016/j.matlet.2012.07.058 JN:MATERIALS LETTERS PY:2012
TC:32 AU: Song, Peng;Wang, Qi;Yang, Zhongxi;
10:135:8 Abnormal photoelectrical properties and gas sensing of mesoporous Sn0.9Ti0.1O2 film under UV light
DOI:10.1016/j.matlet.2013.03.104 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Lin, Zhidong;Guo, Chunliang;Fu, Qiuming;Song, Wenlong;
10:135:9 Three-dimensional SnO2 microstructures assembled by porous nanosheets and their superior performance for gas sensing
DOI:10.1016/j.powtec.2013.10.002 JN:POWDER TECHNOLOGY PY:2013
TC:16 AU: Guo, Jing;Zhang, Jun;Ju, Dianxing;Xu, Hongyan;Cao, Bingqiang;
10:135:10 A comparative study on UV light activated porous TiO2 and ZnO film sensors for gas sensing at room temperature
DOI:10.1016/j.ceramint.2011.07.035 JN:CERAMICS INTERNATIONAL PY:2012
TC:29 AU: Chen, Hao;Liu, Yuan;Xie, Changsheng;Wu, Jun;Zeng, Dawen;Liao, Yichuan;
10:135:11 Novel SnO2 hierarchical nanostructures: Synthesis and their gas sensing properties
DOI:10.1016/j.matlet.2012.09.023 JN:MATERIALS LETTERS PY:2013
TC:12 AU: Zhou, Xiaoming;Fu, Wuyou;Yang, Haibin;Zhang, Yanyan;Li, Minghui;Li, Yixing;
10:135:12 Synthesis of unique SnO2/ZnO core-shell nanorods and nanoflowers and their field emission properties
DOI:10.1016/j.matlet.2013.04.028 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Jiang, Zhixing;Xue, Shaolin;Wu, Shuxian;Zou, Rujia;Zhang, Zhengyu;Jang, Meng;
10:135:13 Fe3O4-NiO core-shell composites: Hydrothermal synthesis and toluene sensing properties
DOI:10.1016/j.matlet.2014.06.060 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Qu, Fengdong;Wang, Yongfan;Liu, Juan;Wen, Shanpeng;Chen, Yu;Ruan, Shengping;
10:135:14 Patterned Zn-seeds and selective growth of ZnO nanowire arrays on transparent conductive substrate and their field emission characteristics
DOI:10.1016/j.ceramint.2012.01.085 JN:CERAMICS INTERNATIONAL PY:2012
TC:4 AU: Yang, C. M.;Hon, M. H.;Leu, I. C.;
10:135:15 The improved synthesis quality of crystalline Lu2Ti2O7 thin film by designing the calcinations modes
DOI:10.1016/j.matlet.2012.12.029 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Li, Bao-rang;Chen, Lei;Li, Zuo-dong;Zhang, Nai-qiang;
10:135:16 One-step synthesis of SnO2 hollow microspheres and its gas sensing properties
DOI:10.1016/j.matlet.2014.08.073 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Zhao, Yan;Liu, Jingyuan;Liu, Qi;Sun, Yanbo;Song, Dalei;Yang, Wanlu;Wang, Jun;Liu, Lianhe;
10:135:17 Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates
DOI:10.1063/1.3682080 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Esmaili-Sardari, Saeed;Berkovich, Andrew;Iliadis, Agis A.;
10:135:18 Structural and optical characterization of potassium doped zinc oxide nanosheets
DOI:10.1016/j.optmat.2014.10.034 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Athma, P. V.;Johns, N.;Anila, E. I.;Safeera, T. A.;
10:136:1 Tuning the Potentials of "Extra" Electrons in Colloidal n-Type ZnO Nanocrystals via Mg2+ Substitution
DOI:10.1021/ja3019934 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:22 AU: Cohn, Alicia W.;Kittilstved, Kevin R.;Gamelin, Daniel R.;
10:136:2 Mid-gap electronic states in Zn1-xMnxO
DOI:10.1103/PhysRevB.82.115202 JN:PHYSICAL REVIEW B PY:2010
TC:18 AU: Johnson, Claire A.;Kittilstved, Kevin R.;Kaspar, Tiffany C.;Droubay, Tim C.;Chambers, Scott A.;Salley, G. Mackay;Gamelin, Daniel R.;
10:136:3 Role of p-d and s-d interactions in the electronic structure and band gap of Zn1-xMxO (M = Cr, Mn, Fe, Co, Ni, and Cu): Photoelectron and optical spectroscopy and first-principles band structure calculations
DOI:10.1103/PhysRevB.86.155203 JN:PHYSICAL REVIEW B PY:2012
TC:6 AU: Gilliland, S. J.;Sans, J. A.;Sanchez-Royo, J. F.;Almonacid, G.;Garcia-Domene, B.;Segura, A.;Tobias, G.;Canadell, E.;
10:136:4 Influence of s,p-d and s-p exchange couplings on exciton splitting in Zn1-xMnxO
DOI:10.1103/PhysRevB.84.035214 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Pacuski, W.;Suffczynski, J.;Osewski, P.;Kossacki, P.;Golnik, A.;Gaj, J. A.;Deparis, C.;Morhain, C.;Chikoidze, E.;Dumont, Y.;Ferrand, D.;Cibert, J.;Dietl, T.;
10:136:5 Visible-light photoconductivity of Zn1-xCoxO and its dependence on Co2+ concentration
DOI:10.1103/PhysRevB.84.125203 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Johnson, Claire A.;Cohn, Alicia;Kaspar, Tiffany;Chambers, Scott A.;Salley, G. Mackay;Gamelin, Daniel R.;
10:136:6 Spin-on Spintronics: Ultrafast Electron Spin Dynamics in ZnO and Zn1-xCoxO Sol-Gel Films
DOI:10.1021/nl201736p JN:NANO LETTERS PY:2011
TC:18 AU: Whitaker, Kelly M.;Raskin, Maxim;Kiliani, Gillian;Beha, Katja;Ochsenbein, Stefan T.;Janssen, Nils;Fonin, Mikhail;Ruediger, Ulrich;Leitenstorfer, Alfred;Gamelin, Daniel R.;Bratschitsch, Rudolf;
10:136:7 Structure, band gap, and Mn-related mid-gap states in epitaxial single crystal (Zn1-xMgx)(1-y)MnyO thin films
DOI:10.1063/1.4803141 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Zhu, Dapeng;Liu, Guolei;Xiao, Shuqin;Yan, Shishen;He, Shumin;Cai, Li;Li, Qinghao;Cao, Qiang;Hu, Shujun;Chen, Yanxue;Kang, Shishou;Mei, Liangmo;
10:136:8 Sub-band-gap photoconductivity in Co2+-doped ZnO
DOI:10.1103/PhysRevB.81.125206 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Johnson, Claire A.;Kaspar, Tiffany C.;Chambers, Scott A.;Salley, G. Mackay;Gamelin, Daniel R.;
10:136:9 Spatial anisotropy of the exchange integrals in Mn-doped wurtzite-type semiconductors
DOI:10.1103/PhysRevB.84.165207 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Kuzian, R. O.;Dare, A. M.;Savoyant, A.;D'Ambrosio, S.;Stepanov, A.;
10:136:10 Photoluminescence in ZnO:Co2+ (0.01%-5%) Nanoparticles, Nanowires, Thin Films, and Single Crystals as a Function of Pressure and Temperature: Exploring Electron-Phonon Interactions
DOI:10.1021/cm403371n JN:CHEMISTRY OF MATERIALS PY:2014
TC:2 AU: Renero-Lecuna, Carlos;Martin-Rodriguez, Rosa;Gonzalez, Jesus A.;Rodriguez, Fernando;Almonacid, Gloria;Segura, Alfredo;Munoz-Sanjose, Vicente;Gamelin, Daniel R.;Valiente, Rafael;
10:136:11 Optical evidence of strong coupling between valence-band holes and d-localized spins in Zn1-xMnxO
DOI:10.1103/PhysRevB.81.153104 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Sokolov, V. I.;Druzhinin, A. V.;Gruzdev, N. B.;Dejneka, A.;Churpita, O.;Hubicka, Z.;Jastrabik, L.;Trepakov, V.;
10:136:12 Competing exchange interactions in Co-doped ZnO: Departure from the superexchange picture
DOI:10.1103/PhysRevB.86.035202 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: D'Ambrosio, S.;Pashchenko, V.;Mignot, J. -M.;Ignatchik, O.;Kuzian, R. O.;Savoyant, A.;Golacki, Z.;Grasza, K.;Stepanov, A.;
10:136:13 Determination of s-d exchange coupling in GaMnN by time-resolved Kerr rotation spectroscopy
DOI:10.1103/PhysRevB.90.125205 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Hsu, Wei-Ting;Hsieh, Ting-Yen;Chen, Hsin-Feng;Huang, Feng-Wen;Chen, Po-Cheng;Sheu, Jinn-Kong;Chang, Wen-Hao;
10:136:14 Charge-transfer absorption band in Zn1-xMxO (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure
DOI:10.1063/1.3454243 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Gilliland, S. G.;Sans, J. A.;Sanchez-Royo, J. F.;Almonacid, G.;Segura, A.;
10:136:15 Exchange integrals in Mn- and Co-doped II-VI semiconductors
DOI:10.1103/PhysRevB.90.075205 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Savoyant, A.;D'Ambrosio, S.;Kuzian, R. O.;Dare, A. M.;Stepanov, A.;
10:136:16 Electronic structure and optical properties in ZnO:M(Co, Cd) Effect of band-gap variation
DOI:10.1016/j.tsf.2009.12.033 JN:THIN SOLID FILMS PY:2010
TC:16 AU: Palacios, P.;Aguilera, I.;Wahnon, P.;
10:136:17 Puzzling magneto-optical properties of ZnMnO films
DOI:10.1016/j.optmat.2010.01.034 JN:OPTICAL MATERIALS PY:2010
TC:7 AU: Godlewski, M.;Wasiakowski, A.;Ivanov, V. Yu.;Wojcik-Glodowska, A.;Lukasiewicz, M.;Guziewicz, E.;Jakiela, R.;Kopalko, K.;Zakrzewski, A.;Dumont, Y.;
10:136:18 Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors: Ab initio calculations (vol 79, 205204, 2009)
DOI:10.1103/PhysRevB.83.239903 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Chanier, T.;Virot, F.;Hayn, R.;
10:136:19 Optical and magnetic properties of ZnCoO layers
DOI:10.1016/j.optmat.2012.03.031 JN:OPTICAL MATERIALS PY:2012
TC:2 AU: Godlewski, M.;Lukasiewicz, M. I.;Guziewicz, E.;Ivanov, V. Yu.;Owczarczyk, L.;Witkowski, B. S.;
10:137:1 A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range
DOI:10.1063/1.3610394 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:21 AU: Yuksel, O. F.;Kus, M.;Simsir, N.;Safak, H.;Sahin, M.;Yenel, E.;
10:137:2 Controlling of electrical characteristics of Al/p-Si Schottky diode by tris(8-hydroxyquinolinato) aluminum organic film
DOI:10.1016/j.synthmet.2010.10.005 JN:SYNTHETIC METALS PY:2010
TC:19 AU: Farag, A. A. M.;Gunduz, B.;Yakuphanoglu, Fahrettin;Farooq, W. A.;
10:137:3 Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode
DOI:10.1016/j.tsf.2010.01.042 JN:THIN SOLID FILMS PY:2010
TC:23 AU: Sonmezoglu, Sava;Senkul, Sevilay;Tas, Recep;Cankaya, Gueven;Can, Muzaffer;
10:137:4 Electrical properties of Au/perylene-monoimide/p-Si Schottky diode
DOI:10.1016/j.jallcom.2013.04.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Yuksel, O. F.;Tugluoglu, N.;Gulveren, B.;Safak, H.;Kus, M.;
10:137:5 Electrical characteristics of DNA-based metal-insulator-semiconductor structures
DOI:10.1063/1.3447985 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Sonmezoglu, S.;Sonmezoglu, O. Ates;Cankaya, G.;Yildirim, A.;Serin, N.;
10:137:6 Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer
DOI:10.1016/j.mssp.2012.01.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:6 AU: Kundu, Souvik;Kumar, Ajit;Banerjee, S.;Banerji, P.;
10:137:7 Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
DOI:10.1016/j.mssp.2013.01.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:8 AU: Tugluoglu, N.;Yuksel, O. F.;Karadeniz, S.;Safak, H.;
10:137:8 Polymer/metal hybrid multilayers modified Schottky devices
DOI:10.1063/1.4829532 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Torrisi, V.;Ruffino, F.;Isgro, G.;Crupi, I.;Li Destri, G.;Grimaldi, M. G.;Marletta, G.;
10:137:9 Improvement in electrical performance of half-metallic Fe3O4/GaAs structures using pyrolyzed polymer film as buffer layer
DOI:10.1080/14786435.2014.927599 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:2 AU: Akin, Seckin;Ozel, Faruk;Kus, Mahmut;Sonmezoglu, Savas;
10:137:10 Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes
DOI:10.1016/j.tsf.2013.02.042 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Yuksel, O. F.;Tugluoglu, N.;Safak, H.;Nalcacigil, Z.;Kus, M.;Karadeniz, S.;
10:137:11 The modification of Schottky barrier height of Au/p-Si Schottky devices by perylene-diimide
DOI:10.1063/1.4789021 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Yuksel, O. F.;Tugluoglu, N.;Safak, H.;Kus, M.;
10:137:12 Analysis of electrical properties of Al/p-Si Schottky contacts with and without rubrene layer
DOI:10.1016/j.synthmet.2013.01.012 JN:SYNTHETIC METALS PY:2013
TC:9 AU: Karadeniz, S.;Baris, B.;Yuksel, O. F.;Tugluoglu, N.;
10:137:13 Structural, optical and transport properties of 4-hydroxy coumarin: an organic Schottky diode
DOI:10.1007/s00339-014-8307-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Mir, Feroz A.;Rehman, Shakeel U.;Mir, Tawfeeq A.;Asokan, K.;Khan, S. H.;
10:137:14 Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
DOI:10.1016/j.jallcom.2013.08.067 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Tugluoglu, Nihat;Baris, Behzad;Gurel, Hatice;Karadeniz, Serdar;Yuksel, Omer Faruk;
10:137:15 Fabrication and electrical characterization of Au/Pyronine-G/p-Si diode
DOI:10.1016/j.mssp.2014.03.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Duman, S.;Ozcelik, F. S.;Gurbulak, B.;Korucu, D.;Baris, O.;Turgut, G.;
10:137:16 The effect of thickness of organic layer on electronic properties of Al/Rhodamine B/p-Si structure
DOI:10.1016/j.mssp.2011.02.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Soylu, Murat;
10:137:17 A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes
DOI:10.1016/j.mssp.2013.07.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Aydemir, Umut;Tascioglu, Ilke;Altindal, Semsettin;Uslu, Ibrahim;
10:137:18 Analysis of dark and photovoltaic characteristics of Au/Pyronine G(Y)/p-Si/Al heterojunction
DOI:10.1016/j.synthmet.2011.10.017 JN:SYNTHETIC METALS PY:2012
TC:7 AU: Farag, A. A. M.;Soliman, H. S.;Atta, A. A.;
10:137:19 Characterization of an Au/n-Si photovoltaic structure with an organic thin film
DOI:10.1016/j.mssp.2013.03.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Ozaydin, C.;Akkilic, K.;Ilhan, S.;Ruzgar, S.;Gullu, O.;Temel, H.;
10:137:20 Optical properties of perylene-monoimide (PMI) and perylene-diimide (PDI) organic semiconductor thin films
DOI:10.1016/j.synthmet.2014.05.003 JN:SYNTHETIC METALS PY:2014
TC:1 AU: Kisnisci, Z.;Yuksel, O. F.;Kus, M.;
10:137:21 Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au-DNA-Si interface
DOI:10.1016/j.apsusc.2012.11.002 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Bazlov, N. V.;Vyvenko, O. F.;Sokolov, P. A.;Kas'yanenko, N. A.;Petrov, Yu V.;
10:137:22 Study of Synthesis and Temperature Dependence of DC Conductivity in the Low Temperature Range for Poly(N-Methylaniline)
DOI:10.1007/s11664-011-1526-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:0 AU: Kapil, Atul;Chand, Subhash;
10:137:23 Heraclenin: A Potential Optoelectronic Device Material from Prangos pabularia
DOI:10.1007/s11664-013-2596-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:5 AU: Banday, Javid A.;Bhat, Ghulam M.;Mir, Feroz A.;Qurishi, Mushtaq A.;Koul, Surinder;Razdan, Tej K.;
10:137:24 Electrical Properties and Carrier Transport Mechanism of Au/n-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer
DOI:10.2320/matertrans.M2013449 JN:MATERIALS TRANSACTIONS PY:2014
TC:1 AU: Janardhanam, V.;Jyothi, I.;Lee, Ji-Hyun;Kim, Jae-Yeon;Reddy, V. Rajagopal;Choi, Chel-Jong;
10:137:25 Investigation of structural and optoelectronic properties of annealed nickel phthalocyanine thin films
DOI:10.1016/j.mssp.2013.08.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Neghabi, Mina;Zadsar, Mehdi;Ghorashi, Seyed Mohammad Bagher;
10:137:26 Modification of electrical properties of the Au/1,1 ' dimethyl ferrocenecarboxylate/n-Si Schottky diode
DOI:10.1016/j.synthmet.2010.08.006 JN:SYNTHETIC METALS PY:2010
TC:2 AU: Aydin, M. Enver;Yakuphanoglu, Fahrettin;Ozturk, Gulsen;
10:138:1 Effects of post-annealing on structural, optical and electrical properties of Al-doped ZnO thin films
DOI:10.1016/j.apsusc.2010.12.144 JN:APPLIED SURFACE SCIENCE PY:2011
TC:40 AU: Tong, Hao;Deng, Zhonghua;Liu, Zhuguang;Huang, Changgang;Huang, Jiquan;Lan, Hai;Wang, Chong;Cao, Yongge;
10:138:2 Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO
DOI:10.1021/am100298p JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:31 AU: Dong, J. J.;Zhang, X. W.;You, J. B.;Cai, P. F.;Yin, Z. G.;An, Q.;Ma, X. B.;Jin, P.;Wang, Z. G.;Chu, Paul K.;
10:138:3 Controlled optical and magnetic properties of ZnO nanorods by Ar ion irradiation
DOI:10.1063/1.3574772 JN:APPLIED PHYSICS LETTERS PY:2011
TC:19 AU: Panigrahy, Bharati;Aslam, M.;Bahadur, D.;
10:138:4 H mediated room temperature ferromagnetism in Zn0.98Cu0.02O
DOI:10.1016/j.jallcom.2012.05.032 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Zhang, Hua;Wen, Zheng;Qi, Xiaosi;Si, Lifang;Xu, Liguo;Zhong, Wei;Wu, Di;Shen, Kai;Xu, Mingxiang;Qiu, Teng;Xu, Qingyu;
10:138:5 Room temperature ferromagnetism in ZnO prepared by microemulsion
DOI:10.1063/1.3624926 JN:AIP ADVANCES PY:2011
TC:6 AU: Xu, Qingyu;Wen, Zheng;Zhang, Hua;Qi, Xiaosi;Zhong, Wei;Xu, Liguo;Wu, Di;Shen, Kai;Xu, Mingxiang;
10:138:6 Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation
DOI:10.1088/0957-4484/21/6/065709 JN:NANOTECHNOLOGY PY:2010
TC:39 AU: Dev, A.;Niepelt, R.;Richters, J. P.;Ronning, C.;Voss, T.;
10:138:7 Enhanced room temperature ferromagnetism in hydrogenated Zn0.98Mn0.02O
DOI:10.1016/j.apsusc.2013.02.009 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Zhang, Hua;Qin, Sai;Cao, Yanqiang;Yang, Zaixing;Si, Lifang;Zhong, Wei;Wu, Di;Xu, Mingxiang;Xu, Qingyu;
10:138:8 Enhanced room temperature ferromagnetism in Co-doped ZnO mediated by interstitial H
DOI:10.1016/j.matlet.2012.08.116 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Zhang, Hua;Cao, Yanqiang;Yang, Zaixing;Si, Lifang;Zhong, Wei;Wu, Di;Xu, Mingxiang;Xu, Qingyu;
10:138:9 Stability of hydrogen incorporated in ZnO nanowires by plasma treatment
DOI:10.1088/0957-4484/22/43/435703 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Li, Yanbo;Zhong, Miao;Tokizono, Takero;Yamada, Ichiro;Bremond, Georges;Delaunay, Jean-Jacques;
10:138:10 Evidence of Surface-Preferential Co Distribution in ZnO Nanocrystal and Its Effects on the Ferromagnetic Property
DOI:10.1021/am100303n JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:10 AU: Hao, Weichang;Li, Jianjun;Xu, Huaizhe;Wang, Jiaou;Wang, Tianmin;
10:138:11 Effect of Co content on magnetic and optical properties of Zn1-xCoxOy nanorods
DOI:10.1016/j.jallcom.2012.08.108 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Chen, Jia-Hong;Lin, Yow-Jon;Chang, Hsing-Cheng;Chen, Ya-Hui;Horng, Lance;Chang, Chia-Chi;
10:138:12 Tunable Schottky barrier height and surface potential by using hydrogen ions
DOI:10.1063/1.4821425 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Hsu, J. K.;Lin, T. Y.;Lai, C. Y.;Chien, T. C.;Song, J. H.;Yeh, P. H.;
10:138:13 Hydrogen released from bulk ZnO single crystals investigated by time-of-flight electron-stimulated desorption
DOI:10.1063/1.3505750 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Dierre, Benjamin;Yuan, Xiaoli;Ueda, Kazuyuki;Sekiguchi, Takashi;
10:138:14 Effects of Chemical Treatment on the Luminescence of ZnO
DOI:10.1007/s11664-010-1124-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:3 AU: Dierre, B.;Yuan, X. L.;Armani, N.;Fabbri, F.;Salviati, G.;Ueda, K.;Sekiguchi, T.;
10:138:15 Impurity induced bond-softening and defect states in ZnO:Cu
DOI:10.1063/1.3624918 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Samanta, Kousik;Arora, A. K.;Katiyar, Ram S.;
10:139:1 Formation of aligned ZnO nanorods on self-grown ZnO template and its enhanced field emission characteristics
DOI:10.1016/j.apsusc.2010.03.130 JN:APPLIED SURFACE SCIENCE PY:2010
TC:37 AU: Singh, Jai;Patil, Sandip S.;More, Mahendra A.;Joag, Dilip S.;Tiwari, R. S.;Srivastava, O. N.;
10:139:2 Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface
DOI:10.1016/j.jallcom.2010.09.016 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:10 AU: Cai, Fangping;Zhu, Liping;He, Haiping;Li, Jiesheng;Yang, Yefeng;Chen, Xiaojun;Ye, Zhizhen;
10:139:3 Luminescence characteristics and growth mechanism of awl-like ZnO Nanostructures fabricated on Ni-coated silicon substrate via chemical vapor deposition method
DOI:10.1016/j.ceramint.2014.04.074 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Cai, Xiaolong;Wang, Fuxue;Yan, Dawei;Zhu, Zhaomin;Gu, Xiaofeng;
10:139:4 Fabrication and characterization of tetrapod-like ZnO nanostructures prepared by catalyst-free thermal evaporation
DOI:10.1016/j.matchar.2009.10.011 JN:MATERIALS CHARACTERIZATION PY:2010
TC:28 AU: Feng, Libing;Liu, Aihua;Liu, Mei;Ma, Yuying;Wei, Jing;Man, Baoyuan;
10:139:5 Morphology control and improved field emission properties of ZnO tetrapod films deposited by electrophoretic deposition
DOI:10.1016/j.ceramint.2013.02.027 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Ma, L. A.;Guo, T. L.;
10:139:6 Optimal Zn/O ratio in vapor phase for the synthesis of high quality ZnO tetrapod nanocrystals via thermal evaporation of Zn in Air
DOI:10.1016/j.apsusc.2012.04.183 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Lee, Geun-Hyoung;
10:139:7 Enhanced NH3 gas sensing properties of a QCM sensor by increasing the length of vertically orientated ZnO nanorods
DOI:10.1016/j.apsusc.2012.11.028 JN:APPLIED SURFACE SCIENCE PY:2013
TC:16 AU: Vu Anh Minh;Le Anh Tuan;Tran Quang Huy;Vu Ngoc Hung;Nguyen Van Quy;
10:139:8 Synthesis and investigation of Indium doping and surfactant on the morphological, optical and UV/Vis photocatalytic properties of ZnO nanostructure
DOI:10.1016/j.ceramint.2013.09.085 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Rezapour, Mehdi;Talebian, Nasrin;
10:139:9 Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing
DOI:10.1016/j.mssp.2011.05.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:7 AU: Fan, X. M.;Zhang, H. G.;Wang, J.;Zhou, Z. W.;
10:139:10 Synthesis and cathodoluminescence of ZnO tetrapods prepared by a simple oxidation of Zn powder in air atmosphere
DOI:10.1016/j.ceramint.2010.09.025 JN:CERAMICS INTERNATIONAL PY:2011
TC:8 AU: Lee, Geun-Hyoung;
10:139:11 Electro-chemical deposition of zinc oxide nanostructures by using two electrodes
DOI:10.1063/1.3633476 JN:AIP ADVANCES PY:2011
TC:8 AU: Taleatu, B. A.;Fasasi, A. Y.;Di Santo, G.;Bernstorff, S.;Goldoni, A.;Fanetti, M.;Floreano, L.;Borghetti, P.;Casalis, L.;Sanavio, B.;Castellarin-Cudia, C.;
10:139:12 Controllable synthesis of the six prism zinc oxide microtubes and 3D microflowers consist of the six prism microrobs
DOI:10.1016/j.powtec.2012.01.038 JN:POWDER TECHNOLOGY PY:2012
TC:0 AU: Zhang, Shujuan;
10:139:13 Synthesis of magnetocoated tetrapod ZnO-whiskers by polymer precursor derived method
DOI:10.1016/j.apsusc.2010.12.016 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Xing, Xin;Li, Gongyi;Liu, Lin;Li, Xiaodong;Chu, Zengyong;Cheng, Haifeng;
10:139:14 Structural and electrical properties of single crystal indium doped ZnO films synthesized by low temperature solution method
DOI:10.1016/j.jcrysgro.2009.10.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Quang, Le Hong;Kuan, Lim Swee;Liang, Gregory Goh Kia;
10:139:15 Study on the structure and luminescence properties of the coordinated ZnO crystallites
DOI:10.1007/s00339-012-7500-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:0 AU: Chen, Qian-huo;Liu, Qing;Li, Qing;Sheng, Yu;Zhang, Wen-gong;
10:139:16 How hybridization with zinc oxide whiskers and carbon fibers affects the thermal diffusivity and mechanical properties of poly(L-lactic acid) nanocomposites
DOI:10.1007/s10853-010-4942-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:1 AU: Nakamura, Akinobu;Iji, Masatoshi;
10:140:1 Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates
DOI:10.1016/j.tsf.2011.01.266 JN:THIN SOLID FILMS PY:2011
TC:31 AU: Nistor, M.;Mandache, N. B.;Perriere, J.;Hebert, C.;Gherendi, F.;Seiler, W.;
10:140:2 Double layer structure of ZnO thin films deposited by RF-magnetron sputtering on glass substrate
DOI:10.1016/j.apsusc.2012.05.097 JN:APPLIED SURFACE SCIENCE PY:2012
TC:23 AU: Besleaga, C.;Stan, G. E.;Galca, A. C.;Ion, L.;Antohe, S.;
10:140:3 The effects of Dea:water ratio on the properties of ZnO nanofilms obtained by spin coating method
DOI:10.1016/j.mssp.2014.03.033 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Arier, Umet Ozlem Akkaya;Uysal, Bengu Ozugur;
10:140:4 Study of structural and optical properties of ZnO films grown by pulsed laser deposition
DOI:10.1016/j.apsusc.2010.03.026 JN:APPLIED SURFACE SCIENCE PY:2010
TC:31 AU: Lemlikchi, S.;Abdelli-Messaci, S.;Lafane, S.;Kerdja, T.;Guittoum, A.;Saad, M.;
10:140:5 Evolution of Wurtzite ZnO Films on Cubic MgO (001) Substrates: A Structural, Optical, and Electronic Investigation of the Misfit Structures
DOI:10.1021/am503256p JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Zhou, Hua;Wang, Hui-Qiong;Li, Yaping;Li, Kongyi;Kang, Junyong;Zheng, Jin-Cheng;Jiang, Zheng;Huang, Yuying;Wu, Lijun;Zhang, Lihua;Kisslinger, Kim;Zhu, Yimei;
10:140:6 Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.12.163 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Lu, C. -Y. J.;Chang, L.;Ploog, K. H.;Chou, M. M. C.;
10:140:7 Wurtzite ZnO (001) films grown on cubic MgO (001) with bulk-like opto-electronic properties
DOI:10.1063/1.3647846 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Zhou, Hua;Wang, Hui-Qiong;Wu, Lijun;Zhang, Lihua;Kisslinger, Kim;Zhu, Yimei;Chen, Xiaohang;Zhan, Huahan;Kang, Junyong;
10:140:8 Tuning structural, electrical, and optical properties of oxide alloys: ZnO1-xSex
DOI:10.1063/1.4724336 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Mayer, Marie A.;Yu, Kin Man;Haller, Eugene E.;Walukiewicz, Wladek;
10:140:9 The crossover of preferred orientation in heteroepitaxial ZnO/MgO(001) films
DOI:10.1016/j.jcrysgro.2011.01.089 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Seo, S. H.;Kang, H. C.;
10:140:10 Structural properties of ZnO films grown by picosecond pulsed-laser deposition
DOI:10.1016/j.apsusc.2011.08.047 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Lansiart, L.;Millon, E.;Perriere, J.;Mathias, J.;Petit, A.;Seiler, W.;Boulmer-Leborgne, C.;
10:140:11 Pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices
DOI:10.1016/j.apsusc.2013.10.075 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Serhane, Rafik;Abdelli-Messaci, Samira;Lafane, Slimane;Khales, Hammouche;Aouimeur, Walid;Hassein-Bey, Abdelkadder;Boutkedjirt, Tarek;
10:140:12 Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films
DOI:10.1016/j.solmat.2013.02.006 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:6 AU: Lozano, O.;Chen, Q. Y.;Wadekar, P. V.;Seo, H. W.;Chinta, P. V.;Chu, L. H.;Tu, L. W.;Lo, Ikai;Yeh, S. W.;Ho, N. J.;Chuang, F. C.;Jang, D. J.;Wijesundera, D.;Chu, Wei-Kan;
10:140:13 The role of the substrate material type in formation of laser induced periodical surface structures on ZnO thin films
DOI:10.1016/j.apsusc.2012.01.089 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Zamfirescu, Marian;Dinescu, Adrian;Danila, Mihai;Socol, Gabriel;Radu, Catalina;
10:140:14 FeZnO-Based Resistive Switching Devices
DOI:10.1007/s11664-012-2045-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:4 AU: Zhang, Yang;Duan, Ziqing;Li, Rui;Ku, Chieh-Jen;Reyes, Pavel;Ashrafi, Almamun;Lu, Yicheng;
10:140:15 Visible photoluminescense of the (11(2)over-bar0), (10(1)over-bar1) and (0001) surfaces of ZnO nanofilms
DOI:10.1016/j.matlet.2011.07.041 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Shen, Jung-Hsiung;Yeh, Sung-Wei;Mao, Shih-Wei;Huang, Hsing-Lu;Huang, Yau-Shiau;Gan, Dershin;
10:140:16 Interfaces of c-axis oriented ZnO thin films on MgO (001) substrates
DOI:10.1016/j.tsf.2014.03.011 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Mi, Shao-Bo;
10:140:17 Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films
DOI:10.1016/j.apsusc.2012.11.138 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Huang, S. -H.;Chou, Y. -C.;Chou, C. -M.;Hsiao, V. K. S.;
10:140:18 Structure, interface, and luminescence of (01(1)over-bar1) ZnO nanofilms
DOI:10.1016/j.tsf.2010.08.098 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Shen, Jung-Hsiung;Yeh, Sung-Wei;Huang, Hsing-Lu;Gan, Dershin;
10:140:19 Influence of Solution Concentrations on Surface Morphology and Wettability of ZnO Thin Films
DOI:10.1007/s13391-012-2170-3 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Lv, Jianguo;Liu, Changlong;Wang, Feng;Zhou, Zhitao;Zi, Zhenfa;Feng, Yuan;Chen, Xiaoshuang;Liu, Feng;He, Gang;Shi, Shiwei;Song, Xueping;Sun, Zhaoqi;
10:140:20 The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
DOI:10.1016/j.jcrysgro.2010.11.095 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Shi, K.;Yang, A. L.;Wang, J.;Song, H. P.;Xu, X. Q.;Sang, L.;Wei, H. Y.;Yang, S. Y.;Liu, X. L.;Zhu, Q. S.;Wang, Z. G.;
10:140:21 Visible photoluminescence of the (1120), (1011) and (0001) surfaces of ZnO nanofilms (vol 65, pg 3333, 2011)
DOI:10.1016/j.matlet.2011.10.022 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Shen, Jung-Hsiung;Yeh, Sung-Wei;Mao, Shih-Wei;Huang, Hsing-Lu;Huang, Yau-Shiau;Gan, Dershin;
10:141:1 Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
DOI:10.1063/1.3357431 JN:APPLIED PHYSICS LETTERS PY:2010
TC:58 AU: Sung, Sang-Yun;Choi, Jun Hyuk;Han, Un Bin;Lee, Ki Chang;Lee, Joon-Hyung;Kim, Jeong-Joo;Lim, Wantae;Pearton, S. J.;Norton, D. P.;Heo, Young-Woo;
10:141:2 Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy
DOI:10.1063/1.3600340 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Douglas, E. A.;Scheurmann, A.;Davies, P.;Gila, B. P.;Cho, Hyun;Craciun, V.;Lambers, E. S.;Pearton, S. J.;Ren, F.;
10:141:3 Band offsets in HfO2/InGaZnO4 heterojunctions
DOI:10.1063/1.3673905 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Cho, Hyun;Douglas, E. A.;Gila, B. P.;Craciun, V.;Lambers, E. S.;Ren, Fan;Pearton, S. J.;
10:141:4 Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy
DOI:10.1063/1.4773299 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Xie, Zhang-Yi;Lu, Hong-Liang;Xu, Sai-Sheng;Geng, Yang;Sun, Qing-Qing;Ding, Shi-Jin;Zhang, David Wei;
10:141:5 Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors
DOI:10.1116/1.3556921 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:13 AU: Heo, Young-Woo;Cho, Kwang-Min;Sun, Sang-Yun;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Norton, D. P.;Pearton, S. J.;
10:141:6 Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy
DOI:10.1063/1.4744983 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Lee, Kyeongmi;Nomura, Kenji;Yanagi, Hiroshi;Kamiya, Toshio;Ikenaga, Eiji;Sugiyama, Takeharu;Kobayashi, Keisuke;Hosono, Hideo;
10:141:7 Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers
DOI:10.1116/1.3276774 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:24 AU: Lim, Wantae;Douglas, E. A.;Norton, D. P.;Pearton, S. J.;Ren, F.;Heo, Young-Woo;Son, S. Y.;Yuh, J. H.;
10:141:8 Band offsets in ZrO2/InGaZnO4 heterojunction
DOI:10.1063/1.4750069 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Yao, Jianke;Zhang, Shengdong;Gong, Li;
10:141:9 Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films
DOI:10.1016/j.tsf.2013.05.031 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Park, Jong Cheon;Jeong, Ok Geun;Kim, Jin Kon;Yun, Young-Hoon;Pearton, Stephen J.;Cho, Hyun;
10:141:10 Border trap characterization in amorphous indium-gallium-zinc oxide thin-film transistors with SiOX and SiNX gate dielectrics
DOI:10.1063/1.4824118 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Jeong, Chan-Yong;Lee, Daeun;Song, Sang-Hun;Cho, In-Tak;Lee, Jong-Ho;Cho, Eou-Sik;Kwon, Hyuck-In;
10:141:11 Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates
DOI:10.1016/j.tsf.2009.12.010 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Lee, Chi-Yuan;Chang, Chienliu;Shih, Wen-Pin;Dai, Ching-Liang;
10:141:12 Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation
DOI:10.1063/1.3491553 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Park, Jae Chul;Kim, Sang Wook;Kim, Chang Jung;Kim, Sungchul;Kim, Dae Hwan;Cho, In-Tak;Kwon, Hyuck-In;
10:141:13 Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors
DOI:10.1116/1.3553205 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:4 AU: Lee, Ki Chang;Jo, Kwang-Min;Sung, Sang-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Jeong, Byoung-Seong;Pearton, S. J.;Norton, D. P.;Heo, Young-Woo;
10:141:14 High rate dry etching of InGaZnO by BCl3/O-2 plasma
DOI:10.1063/1.3624594 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Park, Wanjae;Whang, Ki-Woong;Yoon, Young Gwang;Kim, Jeong Hwan;Rha, Sang-Ho;Hwang, Cheol Seong;
10:141:15 Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy (vol 98, 242110, 2011)
DOI:10.1063/1.3617417 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Douglas, E. A.;Scheurmann, A.;Davies, R. P.;Gila, B. P.;Cho, Hyun;Craciun, V.;Lambers, E. S.;Pearton, S. J.;Ren, F.;
10:141:16 Low Damage and Anisotropic Dry Etching of High-k Dielectric HfO2 Films in Inductively Coupled Plasmas
DOI:10.3365/eml.2010.09.107 JN:ELECTRONIC MATERIALS LETTERS PY:2010
TC:5 AU: Park, Jong Cheon;Hwang, Sungu;Kim, Jong-Man;Kim, Jin Kon;Seo, Jun Hyuk;Choi, Duck-Kyun;Lee, Hee Soo;Cho, Hyun;
10:141:17 Study of wet etching thin films of indium tin oxide in oxalic acid by monitoring the resistance
DOI:10.1016/j.tsf.2014.07.027 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Mammana, Suelene S.;Greatti, Alessandra;Luiz, Francis H.;da Costa, Francisca I.;Mammana, Alaide P.;Calligaris, Guilherme A.;Cardoso, Lisandro P.;Mammana, Carlos I. Z.;den Engelsen, Daniel;
10:142:1 Preparation of reactively sputtered Sb-doped SnO2 thin films: Structural, electrical and optical properties
DOI:10.1016/j.solmat.2009.12.008 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:48 AU: Montero, J.;Herrero, J.;Guillen, C.;
10:142:2 Fiber-like stripe ATO (SnO2:Sb) nanostructured thin films grown by sol-gel method: Optical, topographical and electrical properties
DOI:10.1016/j.jallcom.2013.06.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Mazloom, J.;Ghodsi, F. E.;Gholami, M.;
10:142:3 Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol-gel spin coating technique
DOI:10.1016/j.jallcom.2011.05.009 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:34 AU: Farag, A. A. M.;Cavas, M.;Yakuphanoglu, F.;Amanullah, F. M.;
10:142:4 AZO/ATO double-layered transparent conducting electrode: A thermal stability study
DOI:10.1016/j.tsf.2010.12.103 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Montero, J.;Guillen, C.;Herrero, J.;
10:142:5 Sol-gel derived transparent conducting ZnO:Al thin films: Effect of crystallite orientation on conductivity and self-assembled network texture
DOI:10.1016/j.matchemphys.2012.03.079 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Wang, Mingsong;Liang, Weiqiang;Yang, Yunfeng;Yang, Juan;Cheng, Xiaonong;Hahn, Sung Hong;Kim, Eui Jung;
10:142:6 Optical and electrical properties of SnO2:Sb thin films deposited by oblique angle deposition
DOI:10.1016/j.apsusc.2009.09.084 JN:APPLIED SURFACE SCIENCE PY:2010
TC:28 AU: Xiao, Xiudi;Dong, Guoping;Shao, Jianda;He, Hongbo;Fan, Zhengxiu;
10:142:7 Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications
DOI:10.1016/j.mseb.2011.06.015 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:14 AU: Leem, J. W.;Yu, J. S.;
10:142:8 Discharge power dependence of structural, optical and electrical properties of DC sputtered antimony doped tin oxide (ATO) films
DOI:10.1016/j.solmat.2011.03.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:13 AU: Montero, J.;Guillen, C.;Herrero, J.;
10:142:9 Structural, electrical, and optical properties of Sb-doped SnO2 transparent conductive oxides fabricated using an electrospray technique
DOI:10.1016/j.ceramint.2013.08.108 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Koo, Bon-Ryul;Ahn, Hyo-Jin;
10:142:10 Fabrication of transparent conducting ATO films using the ATO sintered targets by pulsed laser deposition
DOI:10.1016/j.solmat.2012.05.032 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:5 AU: Chen, Fei;Li, Na;Shen, Qiang;Wang, Chuanbin;Zhang, Lianmeng;
10:142:11 Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements
DOI:10.1063/1.4870958 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Montero, J.;Guillen, C.;Granqvist, C. G.;Herrero, J.;Niklasson, G. A.;
10:142:12 Antimony doped whiskers of SnO2 grown from vapor phase
DOI:10.1016/j.jcrysgro.2009.11.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Zaytsev, V. B.;Zhukova, A. A.;Rumyantseva, M. N.;Dobrovolsky, A. A.;Calvo, L.;Gaskov, A. M.;
10:142:13 Structural, morphological and electronic study of CVD SnO2:Sb films
DOI:10.1016/j.matchemphys.2013.02.046 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:9 AU: Haireche, S.;Boumeddiene, A.;Guittoum, A.;El Hdiy, A.;Boufelfel, A.;
10:142:14 Structural and electronic properties of Sb-doped SnO2 (110) surface: A first principles study
DOI:10.1016/j.apsusc.2013.07.137 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Boumeddiene, A.;Bouamra, F.;Rerat, M.;Belkhir, H.;
10:142:15 Pd nanoparticles on SnO2(Sb) whiskers: Aggregation and reactivity in CO detection
DOI:10.1016/j.jallcom.2013.02.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Zhukova, A. A.;Rumyantseva, M. N.;Zaytsev, V. B.;Zaytseva, A. V.;Abakumov, A. M.;Gaskov, A. M.;
10:142:16 Bandgap narrowing in high dopant tin oxide degenerate thin film produced by atmosphere pressure chemical vapor deposition
DOI:10.1063/1.4798253 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Lin, Yang-Yi;Lee, Hsin-Yi;Ku, Ching-Shun;Chou, Li-Wei;Wu, Albert T.;
10:142:17 Decay of photo-induced conductivity in Sb-doped SnO2 thin films, using monochromatic light of about bandgap energy
DOI:10.1016/j.apsusc.2012.09.003 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Floriano, E. A.;Scalvi, L. V. A.;Sambrano, J. R.;de Andrade, A.;
10:143:1 Sequential Growth of Zinc Oxide Nanorod Arrays at Room Temperature via a Corrosion Process: Application in Visible Light Photocatalysis
DOI:10.1021/am504299v JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Iqbal, Danish;Kostka, Aleksander;Bashir, Asif;Sarfraz, Adnan;Chen, Ying;Wieck, Andreas D.;Erbe, Andreas;
10:143:2 Optical and Field-Emission Properties of ZnO Nanostructures Deposited Using High-Pressure Pulsed Laser Deposition
DOI:10.1021/am100539q JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:37 AU: Premkumar, T.;Zhou, Y. S.;Lu, Y. F.;Baskar, K.;
10:143:3 Enabling Antibacterial Coating via Bioinspired Mineralization of Nanostructured ZnO on Fabrics under Mild Conditions
DOI:10.1021/am400933n JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Manna, Joydeb;Begum, Gousia;Kumar, K. Pranay;Misra, Sunil;Rana, Rohit K.;
10:143:4 Nanosheet-constructed transparent conducting ZnO:In thin films
DOI:10.1016/j.jallcom.2013.01.181 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Wang, Mingsong;Zhang, Yiping;Yu, Haiyan;Li, Qihui;Hahn, Sung Hong;Kim, Eui Jung;
10:143:5 Controllable Low Temperature Vapor-Solid Growth and Hexagonal Disk Enhanced Field Emission Property of ZnO Nanorod Arrays and Hexagonal Nanodisk Networks
DOI:10.1021/am300561w JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:15 AU: Yang, Fan;Liu, Wei-Hua;Wang, Xue-Wen;Zheng, Jie;Shi, Ru-Yu;Zhao, Hua;Yang, He-Qing;
10:143:6 Metal Corrosion for Nanofabrication
DOI:10.1002/smll.201200475 JN:SMALL PY:2012
TC:8 AU: Yu, Hai-Dong;Zhang, Zhongping;Han, Ming-Yong;
10:143:7 Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels
DOI:10.1016/j.tsf.2011.04.067 JN:THIN SOLID FILMS PY:2012
TC:32 AU: Yamamoto, N.;Makino, H.;Osone, S.;Ujihara, A.;Ito, T.;Hokari, H.;Maruyama, T.;Yamamoto, T.;
10:143:8 Optical, Field-Emission, and Antimicrobial Properties of ZnO Nanostructured Films Deposited at Room Temperature by Activated Reactive Evaporation
DOI:10.1021/am900792k JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:20 AU: Yuvaraj, D.;Kaushik, R.;Rao, K. Narasimha;
10:143:9 Solvothermal Synthesis of ZnO Nanostructures and Their Morphology-Dependent Gas-Sensing Properties
DOI:10.1021/am302811h JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:27 AU: Rai, Prabhakar;Kwak, Woon-Ki;Yu, Yeon-Tae;
10:143:10 Large Surface Dipole Moments in ZnO Nanorods
DOI:10.1021/nl200647e JN:NANO LETTERS PY:2011
TC:14 AU: Dag, S.;Wang, Shuzhi;Wang, Lin-Wang;
10:143:11 Synthesis of nano ZnO thin film on Al foil by rf glow discharge plasma and its effect on E. coli and P. aeruginosa
DOI:10.1007/s00339-012-6929-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Panigrahi, Jagannath;Nayak, Bijan B.;Behera, Debadhyan;Subudhi, Umakanta;Acharya, Bhabani S.;
10:143:12 The structure, composition, and dimensions of TiO2 and ZnO nanomaterials in commercial sunscreens
DOI:10.1007/s11051-011-0438-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:24 AU: Lewicka, Zuzanna A.;Benedetto, Angelo F.;Benoit, Denise N.;Yu, William W.;Fortner, John D.;Colvin, Vicki L.;
10:144:1 Sol-gel synthesis of ZnO transparent and conductive films: A critical approach
DOI:10.1016/j.solmat.2012.06.016 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:15 AU: Tari, Orlando;Aronne, Antonio;Addonizio, Maria Luisa;Daliento, Santolo;Fanelli, Esther;Pernice, Pasquale;
10:144:2 Enhancing light harvesting by hierarchical functionally graded transparent conducting Al-doped ZnO nano- and mesoarchitectures
DOI:10.1016/j.solmat.2014.05.035 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Gondoni, Paolo;Mazzolini, Piero;Russo, Valeria;Petrozza, Annamaria;Srivastava, Avanish K.;Bassi, Andrea Li;Casari, Carlo S.;
10:144:3 Structural and functional properties of Al:ZnO thin films grown by Pulsed Laser Deposition at room temperature
DOI:10.1016/j.tsf.2011.10.072 JN:THIN SOLID FILMS PY:2012
TC:23 AU: Gondoni, P.;Ghidelli, M.;Di Fonzo, F.;Russo, V.;Bruno, P.;Marti-Rujas, J.;Bottani, C. E.;Bassi, A. Li;Casari, C. S.;
10:144:4 Structure-dependent optical and electrical transport properties of nanostructured Al-doped ZnO
DOI:10.1088/0957-4484/23/36/365706 JN:NANOTECHNOLOGY PY:2012
TC:13 AU: Gondoni, P.;Ghidelli, M.;Di Fonzo, F.;Carminati, M.;Russo, V.;Bassi, A. Li;Casari, C. S.;
10:144:5 Sol-gel synthesis of ZnO transparent conductive films: The role of pH
DOI:10.1016/j.apsusc.2014.03.037 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Addonizio, Maria Luisa;Aronne, Antonio;Daliento, Santolo;Tari, Orlando;Fanelli, Esther;Pernice, Pasquale;
10:144:6 Role of precursor material and annealing ambience on the physical properties of SILAR deposited ZnO films
DOI:10.1016/j.ceramint.2014.04.086 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Ravichandran, K.;Rajkumar, P. V.;Sakthivel, B.;Swarninathan, K.;Chinnappa, L.;
10:144:7 Impact of rapid thermal annealing on structural, optical and electrical properties of DC sputtered doped and co-doped ZnO thin film
DOI:10.1016/j.apsusc.2013.10.048 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Gupta, Chandan Ashis;Mangal, Sutanu;Singh, Udai P.;
10:144:8 Boron-doped zinc oxide layers grown by metal-organic CVD for silicon heterojunction solar cells applications
DOI:10.1016/j.solmat.2010.11.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:19 AU: Favier, A.;Munoz, D.;de Nicolas, S. Martin;Ribeyron, P-J;
10:144:9 Direct current sputtered aluminum-doped zinc oxide films for thin crystalline silicon heterojunction solar cell
DOI:10.1016/j.matchemphys.2013.06.002 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Qiu, Yu;Hermawan, Henrico;Gordon, Ivan;Poortmans, Jef;
10:144:10 Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide
DOI:10.1063/1.4866322 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Russo, V.;Ghidelli, M.;Gondoni, P.;Casari, C. S.;Bassi, A. Li;
10:144:11 Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method
DOI:10.1016/j.tsf.2010.03.094 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Kumar, P. Suresh;Raj, A. Dhayal;Mangalaraj, D.;Nataraj, D.;
10:144:12 Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties
DOI:10.1016/j.tsf.2014.08.023 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Fumagalli, F.;Marti-Rujas, J.;Di Fonzo, F.;
10:144:13 Frequency shifts of the E-2(high) Raman mode due to residual stress in epitaxial ZnO thin films
DOI:10.1063/1.4821222 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Harriman, T. A.;Bi, Z.;Jia, Q. X.;Lucca, D. A.;
10:145:1 Impact of defect distribution on transport properties for Au/ZnO Schottky contacts formed with H2O2-treated unintentionally doped n-type ZnO epilayers
DOI:10.1063/1.3374890 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Lee, Sejoon;Lee, Youngmin;Kim, Deuk Young;Kang, Tae Won;
10:145:2 Defect mediated optical emission of randomly oriented ZnO nanorods and unusual rectifying behavior of Schottky nanojunctions
DOI:10.1063/1.3631792 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Bayan, Sayan;Mohanta, Dambarudhar;
10:145:3 Schottky contact on ZnO nano-columnar film with H(2)O(2) treatment
DOI:10.1063/1.3582143 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Nakamura, A.;Temmyo, J.;
10:145:4 Back-gate tuning of Schottky barrier height in graphene/zinc-oxide photodiodes
DOI:10.1063/1.4812198 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Lee, Sejoon;Lee, Youngmin;Kim, Deuk Young;Song, Emil B.;Kim, Sung Min;
10:145:5 Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode
DOI:10.1155/2013/560542 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Chang, Ren-Hao;Yang, Kai-Chao;Chen, Tai-Hong;Lai, Li-Wen;Lee, Tsung-Hsin;Yao, Shiau-Lu;Liu, Day-Shan;
10:145:6 Unusual Rectifying Response of Nanojunctions Using Randomly Oriented Nanorods (RON) of ZnO Irradiated with 80-MeV Oxygen Ions
DOI:10.1007/s11664-012-1995-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Bayan, Sayan;Mohanta, Dambarudhar;
10:145:7 Study on the Formation of Zinc Peroxide on Zinc Oxide with Hydrogen Peroxide Treatment Using X-ray Photoelectron Spectroscopy (XPS)
DOI:10.1007/s13391-013-2244-x JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:4 AU: Lee, Hsin-Yen;Wu, Bin-Kun;Chern, Ming-Yau;
10:145:8 Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures
DOI:10.1016/j.tsf.2009.11.069 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Jung, Younghun;Mastro, Michael;Hite, Jennifer;Eddy, Charles R., Jr.;Kim, Jihyun;
10:145:9 Fabrication of Schottky barrier diodes using H2O2-treated non-polar ZnO (1 0 (1)over-bar 0) substrates
DOI:10.1016/j.apsusc.2013.09.034 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Kashiwaba, Yasuhiro;Sakuma, Mio;Abe, Takami;Nakagawa, Akira;Niikura, Ikuo;Kashiwaba, Yasube;Daibo, Masahiro;Osada, Hiroshi;
10:145:10 Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts
DOI:10.1016/j.apsusc.2010.07.043 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Tsai, Chia-Hung;Hung, Chen-I;Yang, Cheng-Fu;Houng, Mau-Phon;
10:145:11 Determination of activation behavior in annealed Al-N codoped ZnO Films
DOI:10.1063/1.3587164 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Yao, Shiau-Lu;Hong, Jhen-Dong;Lee, Ching-Ting;Ho, Chung-Yen;Liu, Day-Shan;
10:145:12 Formation of a ZnO2 layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment
DOI:10.1063/1.4792941 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Kashiwaba, Y.;Abe, T.;Nakagawa, A.;Niikura, I.;Kashiwaba, Y.;Daibo, M.;Fujiwara, T.;Osada, H.;
10:145:13 Directed growth characteristics and optoelectronic properties of Eu-doped ZnO nanorods and urchins
DOI:10.1063/1.3462396 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Bayan, S.;Mohanta, D.;
10:145:14 Characteristics of NiO-AZO thin films deposited by magnetron co-sputtering in an O-2 atmosphere
DOI:10.1016/j.matlet.2012.01.021 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Park, H. W.;Bang, J. H.;Hui, K. N.;Song, P. K.;Cheong, W. S.;Kang, B. S.;
10:145:15 Defect chemical modeling of Pd/ZnO Schottky junctions
DOI:10.1016/j.ssi.2012.12.014 JN:SOLID STATE IONICS PY:2013
TC:0 AU: Saraf, Shimon;Rothschild, Avner;
10:145:16 Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN
DOI:10.1016/j.tsf.2010.05.113 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Jung, Younghun;Mastro, Michael A.;Hite, Jennifer;Eddy, Charles R., Jr.;Kim, Jihyun;
10:145:17 Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films
DOI:10.1016/j.apsusc.2010.04.087 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Li, Chunye;Liang, Hongwei;Zhao, Jianze;Feng, Qiuju;Bian, Jiming;Liu, Yang;Shen, Rensheng;Li, Wangcheng;Wu, Guoguang;Du, G. T.;
10:145:18 Optical, structural and adsorption properties of zinc peroxide/hydrogel nanohybrid films
DOI:10.1016/j.apsusc.2009.12.075 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Sebok, Daniel;Janovak, Laszlo;Dekany, Imre;
10:145:19 Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process
DOI:10.1116/1.3462031 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:3 AU: Shan, Z. P.;Gu, S. L.;Wu, K. P.;Zhu, S. M.;Tang, K.;Zheng, Y. D.;
10:145:20 Schottky contact on ZnO nano-columnar film with H2O2 treatment (vol 109, 093517, 2011)
DOI:10.1063/1.3605554 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Nakamura, A.;Temmyo, J.;
10:145:21 Effect of Post-Deposition Processing on ZnO Thin Films and Devices
DOI:10.1007/s11664-009-0999-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:2 AU: Yen, Tingfang;Haungs, Alan;Kim, Sung Jin;Cartwright, Alexander;Anderson, Wayne A.;
10:145:22 Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors
DOI:10.1007/s11664-010-1411-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:1 AU: Catalfamo, Frank;Yen, Tingfang;Yun, Juhyung;Anderson, Wayne A.;
10:145:23 Renewable zinc dioxide nanoparticles and coatings
DOI:10.1016/j.matlet.2013.11.042 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Prikhodchenko, Petr V.;Medvedev, Alexander G.;Mikhaylov, Alexey A.;Tripol'skaya, Tatiana A.;Cumbal, Luis;Shelkov, Rimma;Wolanov, Yitzhak;Gun, Jenny;
10:146:1 Comparative study of microwave and conventional methods for the preparation and optical properties of novel MgO-micro and nano-structures
DOI:10.1016/j.jallcom.2011.08.032 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:34 AU: Selvam, N. Clament Sagaya;Kumar, R. Thinesh;Kennedy, L. John;Vijaya, J. Judith;
10:146:2 Synthesis, characterization, and catalytic property of nanosized MgO flakes with different shapes
DOI:10.1016/j.jallcom.2013.12.113 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Zhang, Yongfen;Ma, Mingzhen;Zhang, Xinyu;Wang, Baoan;Liu, Riping;
10:146:3 Effect of organic capping agent on the photocatalytic activity of MgO nanoflakes obtained by thermal decomposition route
DOI:10.1016/j.ceramint.2012.06.028 JN:CERAMICS INTERNATIONAL PY:2013
TC:4 AU: Sathyamoorthy, R.;Mageshwari, K.;Mali, Sawanta S.;Priyadharshini, S.;Patil, Pramod S.;
10:146:4 Rectangular MgO microsheets with strong catalytic activity
DOI:10.1016/j.matchemphys.2011.05.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:25 AU: Selvamani, T.;Sinhamahapatra, A.;Bhattacharjya, D.;Mukhopadhyay, I.;
10:146:5 Template-free synthesis of MgO nanoparticles for effective photocatalytic applications
DOI:10.1016/j.powtec.2013.09.016 JN:POWDER TECHNOLOGY PY:2013
TC:7 AU: Mageshwari, K.;Mali, Sawanta S.;Sathyamoorthy, R.;Patil, Pramod S.;
10:146:6 Preparation and enhanced visible light-driven catalytic activity of ZnO microrods sensitized by porphyrin heteroaggregate
DOI:10.1016/j.apsusc.2010.04.074 JN:APPLIED SURFACE SCIENCE PY:2010
TC:24 AU: Li, Xiangqing;Cheng, Ying;Kang, Shizhao;Mu, Jin;
10:146:7 Preparation of photoluminescent single crystalline MgO nanobelts by DC arc plasma jet CVD
DOI:10.1016/j.apsusc.2013.03.013 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Li, Mingji;Wang, Xiufeng;Li, Hongji;Di, Hairong;Wu, Xiaoguo;Fang, Changri;Yang, Baohe;
10:146:8 Preparation of MgO nano-rods with strong catalytic activity via hydrated basic magnesium carbonates
DOI:10.1016/j.materresbull.2011.02.024 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:22 AU: Sutradhar, Narottam;Sinhamahapatra, Apurba;Roy, Biplab;Bajaj, Hari C.;Mukhopadhyay, Indrajit;Panda, Asit Baran;
10:146:9 Solvo- or hydrothermal fabrication and excellent carbon dioxide adsorption behaviors of magnesium oxides with multiple morphologies and porous structures
DOI:10.1016/j.matchemphys.2011.02.073 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:19 AU: Zhao, Zhenxuan;Dai, Hongxing;Du, Yucheng;Deng, Jiguang;Zhang, Lei;Shi, Fengjuan;
10:146:10 Nanostructured copper aluminate spinels: Synthesis, structural, optical, magnetic, and catalytic properties
DOI:10.1016/j.mssp.2014.03.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Ragupathi, C.;Vijaya, J. Judith;Kennedy, L. John;Bououdina, M.;
10:146:11 A new approach: Synthesis, characterization and optical studies of nano-zinc aluminate
DOI:10.1016/j.apt.2013.04.013 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:6 AU: Ragupathi, C.;Kennedy, L. John;Vijaya, J. Judith;
10:146:12 Preparation of nanocrystalline MgO by surfactant assisted precipitation method
DOI:10.1016/j.materresbull.2011.06.007 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:13 AU: Rezaei, Mehran;Khajenoori, Majid;Nematollahi, Behzad;
10:146:13 Electrochemical properties of tadpole-like MgO nanobelts
DOI:10.1016/j.matlet.2013.05.026 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Li, Mingji;Wang, Xiufeng;Li, Hongji;Wei, Dai;Qiu, Guojun;Liu, Fude;Yang, Baohe;
10:146:14 Synthesis and optical properties of single-crystal MgO nanobelts
DOI:10.1016/j.matlet.2013.03.118 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Li, Hongji;Li, Mingji;Wang, Xiufeng;Wu, Xiaoguo;Liu, Fude;Yang, Baohe;
10:146:15 Local super-saturation dependent synthesis of MgO nanosheets
DOI:10.1016/j.apsusc.2010.11.087 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Sun, Luwei;He, Haiping;Liu, Chao;Ye, Zhizhen;
10:146:16 The influence of gas adsorption on photovoltage in porphyrin coated ZnO nanorods
DOI:10.1039/c2jm33929c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:9 AU: Sivalingam, Yuvaraj;Magna, Gabriele;Pomarico, Giuseppe;Catini, Alexandro;Martinelli, Eugenio;Paolesse, Roberto;Di Natale, Corrado;
10:146:17 Electrochemical properties and controlled-synthesis of hierarchical beta-Ni(OH)(2) micro-flowers and hollow microspheres
DOI:10.1016/j.materresbull.2010.09.014 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:4 AU: Wang, Yong;Zhu, Qingshan;
10:146:18 Assembly of nanoscale building blocks at solution/solid interfaces
DOI:10.1016/j.materresbull.2009.12.009 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:11 AU: Liu, Fei;Xue, Dongfeng;
10:146:19 Mechanically activated synthesis of single crystalline MgO nanostructures
DOI:10.1016/j.jallcom.2010.07.049 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:4 AU: Nusheh, M.;Yoozbashizadeh, H.;Askari, M.;Kobatake, H.;Fukuyama, H.;
10:146:20 Synthesis and characterization of mesoporous MgO by template-free hydrothermal method
DOI:10.1016/j.materresbull.2013.11.031 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Cui, Hongrnei;Wu, Xiaofeng;Chen, Yunfa;Boughton, R. I.;
10:147:1 Formation and Photocatalytic Application of ZnO Nanotubes Using Aqueous Solution
DOI:10.1021/la902866a JN:LANGMUIR PY:2010
TC:98 AU: Chu, Dewei;Masuda, Yoshitake;Ohji, Tatsuki;Kato, Kazumi;
10:147:2 Photoelectrochemical water splitting with nanocrystalline Zn1-xRuxO thin films
DOI:10.1016/j.ijhydene.2012.05.135 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:11 AU: Sharma, Vidhika;Kumar, Pushpendra;Singh, Nirupama;Upadhyay, Sumant;Satsangi, V. R.;Dass, Sahab;Shrivastau, Rohit;
10:147:3 ZnO thin films, surface embedded with biologically derived Ag/Au nanoparticles, for efficient photoelectrochemical splitting of water
DOI:10.1016/j.ijhydene.2014.09.025 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:0 AU: Kumari, Babita;Sharma, Shailja;Singh, Nirupama;Verma, Anuradha;Satsangi, Vibha R.;Dass, Sahab;Shrivastav, Rohit;
10:147:4 Vertically aligned nanocrystalline Cu-ZnO thin films for photoelectrochemical splitting of water
DOI:10.1007/s10853-011-5293-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:18 AU: Sharma, Vidhika;Kumar, Pushpendra;Shrivastava, Jaya;Solanki, Anjana;Satsangi, V. R.;Dass, Sahab;Shrivastav, Rohit;
10:147:5 Synthesis and characterization of nanocrystalline Zn1-x MxO (M = Ni, Cr) thin films for efficient photoelectrochemical splitting of water under UV irradiation
DOI:10.1016/j.ijhydene.2011.01.004 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2011
TC:17 AU: Sharma, Vidhika;Kumar, Pushpendra;Shrivastava, Jaya;Solanki, Anjana;Satsangi, V. R.;Dass, Sahab;Shrivastav, Rohit;
10:147:6 Photoelectrochemical splitting of water with nanocrystalline Zn1-xMnxO thin films: First-principle DFT computations supporting the systematic experimental endeavor
DOI:10.1016/j.ijhydene.2013.12.150 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:2 AU: Sharma, Vidhika;Dixit, Mudit;Satsangi, Vibha R.;Dass, Sahab;Pal, Sourav;Shrivastav, Rohit;
10:147:7 Nanostructured SrTiO3 thin films sensitized by Cu2O for photoelectrochemical hydrogen generation
DOI:10.1016/j.ijhydene.2013.12.201 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:5 AU: Sharma, Dipika;Verma, Anuradha;Satsangi, Vibha R.;Shrivastav, Rohit;Dass, Sahab;
10:147:8 Electrodeposition and sol-gel derived nanocrystalline N-ZnO thin films for photoelectrochemical splitting of water: Exploring the role of microstructure
DOI:10.1016/j.renene.2014.03.042 JN:RENEWABLE ENERGY PY:2014
TC:5 AU: Singh, Nirupama;Kumari, Babita;Sharma, Shailja;Chaudhary, Surbhi;Upadhyay, Sumant;Satsangi, Vibha R.;Dass, Sahab;Shrivastav, Rohit;
10:147:9 Tin Oxide Nanosheet Assembly for Hydrophobic/Hydrophilic Coating and Cancer Sensing
DOI:10.1021/am201811x JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:14 AU: Masuda, Yoshitake;Ohji, Tatsuki;Kato, Kazumi;
10:147:10 Optical and Magnetic Properties of Fe Doped ZnO Nanoparticles Obtained by Hydrothermal Synthesis
DOI:10.1155/2014/792102 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Wu, Xiaojuan;Wei, Zhiqiang;Zhang, Lingling;Wang, Xuan;Yang, Hua;Jiang, Jinlong;
10:147:11 Study of an antireflection surface constructed of controlled ZnO nanostructures
DOI:10.1016/j.tsf.2014.02.036 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Chung, Ren-Jei;Lin, Zih-Cian;Lin, Chin-An;Lai, Kun-Yu;
10:147:12 Irradiation-induced modifications and PEC response - A case study of SrTiO3 thin films irradiated by 120 MeV Ag9+ ions
DOI:10.1016/j.ijhydene.2011.01.149 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2011
TC:8 AU: Solanki, Anjana;Shrivastava, Jaya;Upadhyay, Sumant;Sharma, Vidhika;Sharma, Poonam;Kumar, Pushpendra;Kumar, Praveen;Gaskell, K.;Satsangi, Vibha R.;Shrivastav, Rohit;Dass, Sahab;
10:147:13 Preparation of nanostructured p-NiO/n-Fe2O3 heterojunction and study of their enhanced photoelectrochemical water splitting performance
DOI:10.1016/j.matlet.2014.06.157 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Rajendran, Ramesh;Yaakob, Zahira;Teridi, Mohd Asri Mat;Rahaman, Muhammad Syukri Abd;Sopian, Kamaruzzaman;
10:147:14 The influence of Mn content on luminescence properties in Mn-doped ZnO films deposited by ultrasonic spray assisted chemical vapor deposition
DOI:10.1016/j.apsusc.2011.02.001 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Shuang, D.;Zhu, X. X.;Wang, J. B.;Zhong, X. L.;Huang, G. J.;He, C.;
10:147:15 Micro-patterned composite films with bowl-like SnO2 microparticles
DOI:10.1016/j.matlet.2012.10.106 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Liu, Yong-Qiang;Pan, Ge-Bo;Zhang, Meng;Li, Feng;
10:147:16 Morphological Evolution and Optical Properties of Dumbbell-shaped ZnO Aggregates
DOI:10.1080/10584587.2013.789775 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Wang, Yong;Zou, Minggui;Li, Zhiqiang;
10:147:17 Superhydrophilic SnO2 nanosheet-assembled film
DOI:10.1016/j.tsf.2012.12.067 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Masuda, Yoshitake;Kato, Kazumi;
10:148:1 Transparent and flexible thin films of ZnO-polystyrene nanocomposite for UV-shielding applications
DOI:10.1039/b914156a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:48 AU: Tu, Yao;Zhou, Li;Jin, Yi Zheng;Gao, Chao;Ye, Zhi Zhen;Yang, Ye Feng;Wang, Qing Ling;
10:148:2 Variation of structural, optical and magnetic properties with Co-doping in Sn1-xCoxO2 nanoparticles
DOI:10.1016/j.jmmm.2012.09.040 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:11 AU: Zhuang, Shendong;Xu, Xiaoyong;Pang, Yaru;Li, He;Yu, Bin;Hu, Jingguo;
10:148:3 Spin-Assisted Multilayers of Poly(methyl methacrylate) and Zinc Oxide Quantum Dots for Ultraviolet-Blocking Applications
DOI:10.1021/am300243u JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:6 AU: Eita, Mohamed;Wagberg, Lars;Muhammed, Mamoun;
10:148:4 Highly transparent bulk PMMA/ZnO nanocomposites with bright visible luminescence and efficient UV-shielding capability
DOI:10.1039/c2jm30672g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:16 AU: Zhang, Yu;Wang, Xiao;Liu, Yongxin;Song, Shuyan;Liu, Dapeng;
10:148:5 Structural Characterization of a Spin-Assisted Colloid-Polyelectrolyte Assembly: Stratified Multilayer Thin Films
DOI:10.1021/la103609f JN:LANGMUIR PY:2010
TC:22 AU: Kiel, M.;Mitzscherling, S.;Leitenberger, W.;Santer, S.;Tiersch, B.;Sievers, T. K.;Moehwald, H.;Bargheer, M.;
10:148:6 Transparent and UV-shielding ZnO@PMMA nanocomposite films
DOI:10.1016/j.optmat.2013.08.021 JN:OPTICAL MATERIALS PY:2013
TC:8 AU: Zhang, Yewei;Zhuang, Shendong;Xu, Xiaoyong;Hu, Jingguo;
10:148:7 Optical properties of ZnO/PMMA nanocomposite films
DOI:10.1016/j.jallcom.2010.04.162 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Kulyk, B.;Kapustianyk, V.;Tsybulskyy, V.;Krupka, O.;Sahraoui, B.;
10:148:8 Transparent SnO2 QDs-based multifunctional glass for ultraviolet-blocking and enhanced hydrophobicity
DOI:10.1016/j.matlet.2014.04.158 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Zhuang, Shendong;Xu, Xiaoyong;Yu, Jianyu;Feng, Bing;Xu, Wei;Hu, Jingguo;
10:148:9 Optical properties of thin films of zinc oxide quantum dots and polydimethylsiloxane: UV-blocking and the effect of cross-linking
DOI:10.1016/j.jcis.2012.07.065 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:1 AU: Eita, Mohamed;El Sayed, Ramy;Muhammed, Mamoun;
10:148:10 Enhanced room temperature excitonic luminescence in ZnO/polymethyl methacrylate nanocomposites prepared by bulk polymerization
DOI:10.1063/1.3466773 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Paramo, J. Antonio;Strzhemechny, Yuri M.;Anzlovar, Alojz;Zigon, Majda;Orel, Zorica Crnjak;
10:148:11 On the Interesting Optical Properties of Highly Transparent, Thermally Stable, Spin-Coated Polystyrene/Zinc Oxide Nanocomposite Films
DOI:10.1002/app.33188 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:12 AU: Jeeju, P. P.;Jayalekshmi, S.;
10:148:12 Enhanced linear and nonlinear optical properties of thermally stable ZnO/poly(styrene)-poly(methyl methacrylate) nanocomposite films
DOI:10.1016/j.tsf.2012.12.043 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Jeeju, P. P.;Jayalekshmi, S.;Chandrasekharan, K.;Sudheesh, P.;
10:148:13 Growth Behaviors of ZnO Nanorods Grown with the Sn-Based Bilayer Catalyst-Covered Substrates
DOI:10.1155/2011/603098 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:5 AU: Kuo, Dong-Hau;Chang, Bo-Jie;
10:148:14 Micromechanism and Kinetic Formulation of Vertically Aligned ZnO Nanorods Grown on Catalytic Bilayers
DOI:10.1155/2012/350425 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Kuo, Dong-Hau;He, Jheng-Yu;
10:148:15 Polyol-Mediated Synthesis of Zinc Oxide Nanorods and Nanocomposites with Poly(methyl methacrylate)
DOI:10.1155/2012/760872 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Anzlovar, Alojz;Orel, Zorica Crnjak;Kogej, Ksenija;Zigon, Majda;
10:148:16 Deactivation of photocatalytically active ZnO nanoparticle and enhancement of its compatibility with organic compounds by surface-capping with organically modified silica
DOI:10.1016/j.apsusc.2010.11.188 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Cao, Zhi;Zhang, Zhijun;
10:148:17 Measuring the Range of Plasmonic Interaction
DOI:10.1021/la204577m JN:LANGMUIR PY:2012
TC:8 AU: Kiel, Mareike;Kloetzer, Madlen;Mitzscherling, Steffen;Bargheer, Matias;
10:148:18 The preparation of zinc silicate/ZnO particles and their use as an efficient UV absorber
DOI:10.1016/j.materresbull.2011.06.037 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Podbrscek, Peter;Drazic, Goran;Anzlovar, Alojz;Orel, Zorica Crnjak;
10:148:19 Preparation and characterizations of polyaniline (PANI)/ZnO nanocomposites film using solution casting method
DOI:10.1016/j.tsf.2011.03.090 JN:THIN SOLID FILMS PY:2011
TC:17 AU: Ahmed, Faheem;Kumar, Shalendra;Arshi, Nishat;Anwar, M. S.;Su-Yeon, Lee;Kil, Gyung-Suk;Park, Dae-Won;Koo, Bon Heun;Lee, Chan Gyu;
10:148:20 Enhanced photoluminescence in transparent thin films of polyaniline-zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles
DOI:10.1016/j.tsf.2014.03.083 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Augustine, M. Sajimol;Jeeju, P. P.;Varma, S. J.;Xavier, P. A. Francis;Jayalekshmi, S.;
10:148:21 Broadband measurements of the transient optical complex dielectric function of a nanoparticle/polymer composite upon ultrafast excitation
DOI:10.1103/PhysRevB.84.165121 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Kiel, M.;Moehwald, H.;Bargheer, M.;
10:148:22 Synthesis of Vertically Aligned ZnO Nanorods on Ni-Based Buffer Layers Using a Thermal Evaporation Process
DOI:10.1007/s11664-011-1823-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Kuo, Dong-Hau;He, Jheng-Yu;Huang, Ying-Sheng;
10:149:1 Anionic and Hidden Hydrogen in ZnO
DOI:10.1103/PhysRevLett.106.115502 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:42 AU: Du, Mao-Hua;Biswas, Koushik;
10:149:2 Phonon dispersion relations of zinc oxide: Inelastic neutron scattering and ab initio calculations
DOI:10.1103/PhysRevB.81.174304 JN:PHYSICAL REVIEW B PY:2010
TC:18 AU: Serrano, J.;Manjon, F. J.;Romero, A. H.;Ivanov, A.;Cardona, M.;Lauck, R.;Bosak, A.;Krisch, M.;
10:149:3 Infrared absorption of hydrogen-related defects in strontium titanate
DOI:10.1063/1.3561867 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Tarun, M. C.;McCluskey, M. D.;
10:149:4 On the origin of an additional Raman mode at 275 cm(-1) in N-doped ZnO thin films
DOI:10.1063/1.3697971 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:14 AU: Wu, Keyue;Fang, Qingqing;Wang, Weina;Thomas, M. Allan;Cui, Jingbiao;
10:149:5 Identification of hydrogen defects in SrTiO3 by first-principles local vibration mode calculations
DOI:10.1103/PhysRevB.85.125205 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: T-Thienprasert, Jiraroj;Fongkaew, Ittipon;Singh, D. J.;Du, M. -H.;Limpijumnong, Sukit;
10:149:6 Interplay between interstitial and substitutional hydrogen donors in ZnO
DOI:10.1103/PhysRevB.89.235203 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Koch, S. G.;Lavrov, E. V.;Weber, J.;
10:149:7 Hydrogenated vacancies and hidden hydrogen in SrTiO3
DOI:10.1103/PhysRevB.89.075202 JN:PHYSICAL REVIEW B PY:2014
TC:2 AU: Varley, J. B.;Janotti, A.;Van de Walle, C. G.;
10:149:8 Charge states of a hydrogen defect with a local vibrational mode at 3326 cm(-1) in ZnO
DOI:10.1103/PhysRevB.82.115206 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Herklotz, F.;Lavrov, E. V.;Kolkovsky, Vl.;Weber, J.;Stavola, M.;
10:149:9 Negatively charged hydrogen at oxygen-vacancy sites in BaTiO3: Density-functional calculation
DOI:10.1063/1.3483243 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Iwazaki, Yoshiki;Suzuki, Toshimasa;Tsuneyuki, Shinji;
10:149:10 Direct Spectroscopic Observation of a Shallow Hydrogenlike Donor State in Insulating SrTiO3
DOI:10.1103/PhysRevLett.113.156801 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Salman, Z.;Prokscha, T.;Amato, A.;Morenzoni, E.;Scheuermann, R.;Sedlak, K.;Suter, A.;
10:149:11 Metastable state of the VZnH2 defect in ZnO
DOI:10.1103/PhysRevB.83.195210 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Bastin, D.;Lavrov, E. V.;Weber, J.;
10:149:12 Temperature dependence of the local structure and lattice dynamics of wurtzite-type ZnO
DOI:10.1016/j.actamat.2014.07.029 JN:ACTA MATERIALIA PY:2014
TC:2 AU: Timoshenko, J.;Anspoks, A.;Kalinko, A.;Kuzmin, A.;
10:149:13 Rotating-frame nuclear magnetic resonance study of the distinct dynamics of hydrogen donors in ZnO
DOI:10.1063/1.4815868 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Park, Jun Kue;Lee, Kyu Won;Lee, Cheol Eui;
10:149:14 First principles calculations of Hydrogen-Titanium vacancy complexes in SrTiO3
DOI:10.1016/j.ceramint.2012.10.076 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Fongkaew, Ittipon;T-Thienprasert, Jiraroj;Singh, D. J.;Du, M. -H.;Limpijumnong, Sukit;
10:149:15 Identification of oxygen defects in CdTe revisited: First-principles study
DOI:10.1063/1.4880157 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: T-Thienprasert, J.;Watcharatharapong, T.;Fongkaew, I.;Du, M. H.;Singh, D. J.;Limpijumnong, S.;
10:149:16 Reassignment of the O-Te-V-Cd complex in CdTe
DOI:10.1103/PhysRevB.84.233201 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Lavrov, E. V.;Bastin, D.;Weber, J.;Schneider, J.;Fauler, A.;Fiederle, M.;
10:149:17 Cadmium vacancy passivated by two hydrogen atoms in CdSe
DOI:10.1103/PhysRevB.85.195204 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Bastin, D.;Lavrov, E. V.;Weber, J.;
10:149:18 Shallow donor level associated with hydrogen impurities in undoped BaTiO3
DOI:10.1063/1.4812348 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Ito, T. U.;Higemoto, W.;Matsuda, T. D.;Koda, A.;Shimomura, K.;
10:149:19 High frequency local vibrational modes of oxygen doped CdSe
DOI:10.1063/1.4831938 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Cheng, Wei;Liu, Lei;Yu, Peter Y.;
10:149:20 An oxyhydride of BaTiO3 exhibiting hydride exchange and electronic conductivity
DOI:10.1038/NMAT3302 JN:NATURE MATERIALS PY:2012
TC:38 AU: Kobayashi, Yoji;Hernandez, Olivier J.;Sakaguchi, Tatsunori;Yajima, Takeshi;Roisnel, Thierry;Tsujimoto, Yoshihiro;Morita, Masaki;Noda, Yasuto;Mogami, Yuuki;Kitada, Atsushi;Ohkura, Masatoshi;Hosokawa, Saburo;Li, Zhaofei;Hayashi, Katsuro;Kusano, Yoshihiro;Kim, Jung Eun;Tsuji, Naruki;Fujiwara, Akihiko;Matsushita, Yoshitaka;Yoshimura, Kazuyoshi;Takegoshi, Kiyonori;Inoue, Masashi;Takano, Mikio;Kageyama, Hiroshi;
10:149:21 Vibrational signatures of O-Te and O-Te-V-Cd in CdTe: A first-principles study
DOI:10.1016/j.commatsci.2010.01.024 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:2 AU: T-Thienprasert, J.;Limpijumnong, S.;Janotti, A.;Van de Walle, C. G.;Zhang, L.;Du, M. -H.;Singh, D. J.;
10:150:1 Vertically aligned ZnO@CdS nanorod heterostructures for visible light photoinactivation of bacteria
DOI:10.1016/j.jallcom.2013.12.158 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:14 AU: Zirak, M.;Akhavan, O.;Moradlou, O.;Nien, Y. T.;Moshfegh, A. Z.;
10:150:2 On the growth and photocatalytic activity of the vertically aligned ZnO nanorods grafted by CdS shells
DOI:10.1016/j.apsusc.2013.02.050 JN:APPLIED SURFACE SCIENCE PY:2013
TC:11 AU: Zirak, M.;Moradlou, O.;Bayati, M. R.;Nien, Y. T.;Moshfegh, A. Z.;
10:150:3 Role of CdO addition on the growth and photocatalytic activity of electrospun ZnO nanofibers: UV vs. visible light
DOI:10.1016/j.apsusc.2014.01.146 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Samadi, Morasae;Pourjavadi, Ali;Moshfegh, A. Z.;
10:150:4 Photoluminescence quenching of a CdS nanoparticles/ZnO nanorods core-shell heterogeneous film and its improved photovoltaic performance
DOI:10.1016/j.optmat.2014.09.005 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Vanalakar, S. A.;Mali, S. S.;Suryawanshi, M. P.;Tarwal, N. L.;Jadhav, P. R.;Agawane, G. L.;Gurav, K. V.;Kamble, A. S.;Shin, S. W.;Moholkar, A. V.;Kim, J. Y.;Kim, J. H.;Patil, P. S.;
10:150:5 ZnO/CdO composite nanorods for photocatalytic degradation of methylene blue under visible light
DOI:10.1016/j.matchemphys.2010.09.030 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:40 AU: Saravanan, R.;Shankar, H.;Prakash, T.;Narayanan, V.;Stephen, A.;
10:150:6 Application of microcrystalline cellulose to fabricate ZnO with enhanced photocatalytic activity
DOI:10.1016/j.jallcom.2014.08.071 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Zuo, Hong-Fen;Guo, Yuan-Ru;Li, Shu-Jun;Pan, Qing-Jiang;
10:150:7 Low temperature aqueous chemical synthesis of CdS sensitized ZnO nanorods
DOI:10.1016/j.matlet.2010.10.067 JN:MATERIALS LETTERS PY:2011
TC:32 AU: Vanalakar, S. A.;Pawar, R. C.;Suryawanshi, M. P.;Mali, S. S.;Dalavi, D. S.;Moholkar, A. V.;Sim, K. U.;Kown, Y. B.;Kim, J. H.;Patil, P. S.;
10:150:8 Farming of ZnO nanorod-arrays via aqueous chemical route for photoelectrochemical solar cell application
DOI:10.1016/j.ceramint.2012.05.023 JN:CERAMICS INTERNATIONAL PY:2012
TC:10 AU: Vanalakar, S. A.;Mali, S. S.;Pawar, R. C.;Dalavi, D. S.;Mohalkar, A. V.;Deshamukh, H. P.;Patil, P. S.;
10:150:9 Photoelectrochemical properties of CdS sensitized ZnO nanorod arrays: Effect of nanorod length
DOI:10.1063/1.4745881 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:15 AU: Vanalakar, S. A.;Mali, S. S.;Pawar, R. C.;Tarwal, N. L.;Moholkar, A. V.;Kim, J. H.;Patil, P. S.;
10:150:10 Photoluminescence of zinc oxide nanopowder synthesized by a combustion method
DOI:10.1016/j.powtec.2010.12.017 JN:POWDER TECHNOLOGY PY:2011
TC:17 AU: Tarwal, N. L.;Jadhav, P. R.;Vanalakar, S. A.;Kalagi, S. S.;Pawar, R. C.;Shaikh, J. S.;Mali, S. S.;Dalavi, D. S.;Shinde, P. S.;Patil, P. S.;
10:150:11 Thermal diffusion of Co into sputtered ZnO:Co thin film for enhancing visible-light-induced photo-catalytic activity
DOI:10.1016/j.apsusc.2011.10.050 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Kao, Chi-Yuan;Liao, Jiunn-Der;Chang, Chia-Wei;Wang, Ru-Yang;
10:150:12 CdS nanoparticle sensitized titanium dioxide decorated graphene for enhancing visible light induced photoanode
DOI:10.1016/j.apsusc.2014.09.167 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Yousefzadeh, S.;Faraji, M.;Nien, Y. T.;Moshfegh, A. Z.;
10:150:13 Study of thermal stability of ZnO:B films grown by LPCVD technique
DOI:10.1016/j.apsusc.2012.02.098 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Zhu, H.;Jia, H.;Liu, D.;Feng, Y.;Zhang, L.;Lai, B.;He, T.;Ma, Y.;Wang, Y.;Yin, J.;Huang, Y.;Mai, Y.;
10:150:14 Significance of crystallinity on the photoelectrochemical and photocatalytic activity of TiO2 nanotube arrays
DOI:10.1016/j.apsusc.2014.06.004 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Nishanthi, S. T.;Iyyapushpam, S.;Sundarakannan, B.;Subramanian, E.;Padiyan, D. Pathinettam;
10:151:1 SnO2 dendrites-nanowires for optoelectronic and gas sensing applications
DOI:10.1016/j.jallcom.2011.09.006 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:31 AU: Mohamed, S. H.;
10:151:2 Towards understanding the nanomaterials characteristics of vapor transported CdS in an open end tube
DOI:10.1016/j.matchemphys.2013.08.049 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Mohamed, S. H.;El-Hagary, M.;
10:151:3 Synthesis, structure and optical properties of single-crystalline In2O3 nanowires
DOI:10.1016/j.jallcom.2012.08.116 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Hadia, N. M. A.;Mohamed, H. A.;
10:151:4 Synthesis, photoluminescence and optical constants evaluations of ultralong CdO nanowires prepared by vapor transport method
DOI:10.1016/j.jallcom.2014.04.065 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Mohamed, S. H.;Hadia, N. M. A.;Diab, A. K.;Hakeem, A. M. Abdel;
10:151:5 Ultraviolet light emission and excitonic fine structures in ultrathin single-crystalline indium oxide nanowires
DOI:10.1063/1.3284654 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Wei, Z. P.;Guo, D. L.;Liu, B.;Chen, R.;Wong, L. M.;Yang, W. F.;Wang, S. J.;Sun, H. D.;Wu, T.;
10:151:6 Growth of beta-Ga2O3 nanowires and their photocatalytic and optical properties using Pt as a catalyst
DOI:10.1016/j.jallcom.2012.05.048 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:17 AU: Mohamed, S. H.;El-Hagary, M.;Althoyaib, S.;
10:151:7 Morphological and magnetic properties of the hydrothermally prepared alpha-Fe2O3 nanorods
DOI:10.1016/j.matchemphys.2014.06.056 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Hadia, N. M. A.;Garcia-Granda, Santiago;Garcia, Jose R.;Martinez-Blanco, D.;Mohamed, S. H.;
10:151:8 Synthesis, structural and ellipsometric evaluation of oxygen-deficient and nearly stoichiometric zinc oxide and indium oxide nanowires/nanoparticles
DOI:10.1080/14786435.2011.588185 JN:PHILOSOPHICAL MAGAZINE PY:2011
TC:9 AU: Mohamed, Sodky Hamed;
10:151:9 Formation mechanism and photoluminescence of necklace-like In2O3 nanowires
DOI:10.1016/j.matlet.2011.02.083 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Jeong, Jong Seok;Lee, Jeong Yong;
10:151:10 The synthesis and growth mechanism of bamboo-like In2O3 nanowires
DOI:10.1088/0957-4484/21/40/405601 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Jeong, Jong Seok;Lee, Jeong Yong;
10:151:11 Gas-phase synthesis of size-classified polyhedral In2O3 nanoparticles
DOI:10.1039/c2jm14306b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:1 AU: Nanda, Karuna Kar;Rouenhoff, Marcel;Kruis, Frank Einar;
10:151:12 Redox reaction-assisted growth of ZnO nanowires on SnO2 thin films
DOI:10.1016/j.matlet.2011.08.033 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Shin, Jeong Ho;Song, Jae Yong;Kim, Young Heon;Kim, Sung Dong;Park, Hyun Min;
10:151:13 Structural and optical properties of CdO nanostructures prepared by atmospheric-pressure CVD
DOI:10.1016/j.tsf.2012.08.061 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Terasako, T.;Fujiwara, T.;Nakata, Y.;Yagi, M.;Shirakata, S.;
10:151:14 Fabrication and CO gas-sensing properties of Pt-functionalized Ga2O3 nanowires
DOI:10.1016/j.ceramint.2011.12.072 JN:CERAMICS INTERNATIONAL PY:2012
TC:1 AU: Kim, Hyunsu;Jin, Changhyun;An, Soyeon;Lee, Chongmu;
10:151:15 Tailoring the photoluminescence of MgO nanowires using the Ag shell layers and nanoparticles
DOI:10.1016/j.tsf.2011.11.012 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Kim, Hyoun Woo;Na, Han Gil;Yang, Ju Chan;Kwak, Dong Sub;
10:152:1 Optical properties of Mn-doped ZnS semiconductor nanoclusters synthesized by a hydrothermal process
DOI:10.1016/j.optmat.2010.09.008 JN:OPTICAL MATERIALS PY:2011
TC:7 AU: Tran Thi Quynh Hoa;Ngo Duc The;McVitie, Stephen;Nguyen Hoang Nam;Le Van Vu;Ta Dinh Canh;Nguyen Ngoc Long;
10:152:2 Luminescence properties of Br-doped ZnS nanoparticles synthesized by a low temperature solid-state reaction method
DOI:10.1016/j.ceramint.2012.12.064 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Li, Yang;Zhou, Sheng;Chen, Zhong;Yang, Yi;Chen, Nan;Du, Guoping;
10:152:3 Study on the optical properties of Zn1-xMgxS (0 <= x <= 0.55) quantum dots prepared by precipitation method
DOI:10.1016/j.mseb.2011.12.028 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:7 AU: Chen, Zhong;Li, Xiao Xia;Chen, Nan;Du, Guoping;Li, Yangsheng;Liu, Guihua;Suen, Andy Y. M.;
10:152:4 Luminescence enhancement of zincblende ZnS:Cl- nanoparticles synthesized by a low temperature solid state reaction method
DOI:10.1016/j.ceramint.2013.02.005 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Zhou, Sheng;Li, Yang;Chen, Zhong;Li, Xiao Xia;Chen, Nan;Du, Guoping;
10:152:5 Luminescence properties of chlorine and oxygen co-doped ZnS nanoparticles synthesized by a solid-state reaction
DOI:10.1016/j.ceramint.2014.05.019 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Chen, Zhong;Li, Xiao Xia;Du, Guoping;Yu, Quanmao;Li, Bo;Huang, Xinyang;
10:152:6 Strong blue luminescence of O2- -doped ZnS nanoparticles synthesized by a low temperature solid state reaction method
DOI:10.1016/j.mssp.2013.01.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Chen, Zhong;Zhou, Sheng;Li, Yang;Li, Xiao Xia;Li, Yangsheng;Sun, Wei;Liu, Guihua;Chen, Nan;Du, Guoping;
10:152:7 Optical properties of ZnS nanoparticles produced by mechanochemical method
DOI:10.1016/j.ceramint.2012.04.070 JN:CERAMICS INTERNATIONAL PY:2012
TC:6 AU: Pathak, C. S.;Mishra, D. D.;Agarwala, V.;Mandal, M. K.;
10:152:8 Blue light emission from barium doped zinc sulfide nanoparticles
DOI:10.1016/j.ceramint.2012.03.063 JN:CERAMICS INTERNATIONAL PY:2012
TC:10 AU: Pathak, C. S.;Mishra, D. D.;Agarwala, V.;Mandal, M. K.;
10:152:9 Enhanced photoluminescence property of CaB2O4:Eu3+ phosphor prepared by calcining the Ca4B10O19 center dot 7H(2)O:Eu3+ precursor
DOI:10.1016/j.materresbull.2013.08.010 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Huang, Hong-Sheng;Liu, Zhi-Hong;
10:152:10 Synthesis and photoluminescence properties of Cl--doped ZnS nanoparticles prepared by a solid-state reaction
DOI:10.1016/j.mseb.2013.05.003 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:3 AU: Li, Xiao Xia;Chen, Zhong;Du, Guoping;Chen, Nan;Yu, Quanmao;
10:152:11 Enhanced photoluminescence properties of ZnS:Cu2+ nanoparticles using PMMA and CTAB surfactants
DOI:10.1016/j.mssp.2011.09.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:11 AU: Kuppayee, M.;Nachiyar, G. K. Vanathi;Ramasamy, V.;
10:152:12 Temperature dependence of morphology, structural and optical properties of ZnS nanostructures synthesized by wet chemical route
DOI:10.1016/j.jallcom.2010.07.002 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Navaneethan, M.;Archana, J.;Nisha, K. D.;Hayakawa, Y.;Ponnusamy, S.;Muthamizhchelvan, C.;
10:152:13 Photoluminescence spectra of ZnS:X- (X = F and I) nanoparticles synthesized via a solid-state reaction
DOI:10.1016/j.optmat.2014.01.002 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Chen, Zhong;Li, Xiao Xia;Du, Guoping;Yu, Quanmao;
10:152:14 Microstructure characterization of ball-mill prepared ternary Ti0.9Al0.1C by X-ray diffraction and electron microscopy
DOI:10.1016/j.jallcom.2010.04.101 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:3 AU: Dutta, H.;Sen, A.;Pradhan, S. K.;
10:152:15 Optical properties of ZnS nanoparticles prepared by high energy ball milling
DOI:10.1016/j.mssp.2012.10.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Pathak, C. S.;Mishra, D. D.;Agarwala, V.;Mandal, M. K.;
10:152:16 Quantum size effect on ZnO nanoparticle-based discs synthesized by mechanical milling
DOI:10.1016/j.apsusc.2012.04.163 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Sendi, Rabab Khalid;Mahmud, Shahrom;
10:152:17 Thermal stability and optical properties of HMTA capped zinc sulfide nanoparticles
DOI:10.1016/j.jallcom.2010.02.159 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Anand, K. Vijai;Chinnu, M. Karl;Kumar, R. Mohan;Mohan, R.;Jayavel, R.;
10:152:18 Mechanochemical solid state synthesis of (Cd0.8Zn0.2)S quantum dots: Microstructure and optical characterizations
DOI:10.1016/j.jallcom.2011.01.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:10 AU: Sain, S.;Pradhan, S. K.;
10:152:19 In situ co-assembly synthesis of zinc oxide encapsulated in mesoporous silica
DOI:10.1016/j.matlet.2012.11.041 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Lu, Qingshan;Yun, Guohong;Tian, Qiang;Zhou, Wenping;
10:152:20 Microstructure characterization and electrical transport of nanocrystalline ZrO2-CeO2 solid solution
DOI:10.1016/j.materresbull.2013.05.102 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:1 AU: Saha, S.;Dutta, H.;Meikap, A. K.;Pradhan, S. K.;
10:152:21 Luminescent ZnS:Mn/thioglycerol and ZnS:Mn/ZnS core/shell nanocrystals: Synthesis and characterization
DOI:10.1016/j.optmat.2012.07.018 JN:OPTICAL MATERIALS PY:2012
TC:0 AU: Tran Thi Quynh Hoa;Le Thi Thanh Binh;Le Van Vu;Nguyen Ngoc Long;Vu Thi Hong Hanh;Vu Duc Chinh;Pham Thu Nga;
10:152:22 Spectroscopy of the CaB4O7 and LiCaBO3 glasses, doped with terbium and dysprosium
DOI:10.1016/j.jnoncrysol.2013.02.018 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:4 AU: Padlyak, B.;Drzewiecki, A.;
10:152:23 A new fluorescent film sensor for Pb(II) ions developed by simulating bio-mineralization process synthesizing of ZnS/CS nanocomposite
DOI:10.1016/j.mseb.2011.05.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:3 AU: Wang, Shan;Yu, Demei;Wu, Guangwen;Guo, Jinchan;Lei, Cao;
10:153:1 ZnS Branched Architectures as Optoelectronic Devices and Field Emitters
DOI:10.1002/adma.200903643 JN:ADVANCED MATERIALS PY:2010
TC:53 AU: Chen, Zhi-Gang;Cheng, Lina;Xu, Hong-Yi;Liu, Ji-Zi;Zou, Jin;Sekiguchi, Takashi;Lu, Gao Qing (Max);Cheng, Hui-Ming;
10:153:2 Synthesis and photoluminescence of wurtzite CdS and ZnS architectural structures via a facile solvothermal approach in mixed solvents
DOI:10.1016/j.jallcom.2011.08.001 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:10 AU: Wang, Xinjuan;Zou, Bingsuo;Zhang, Qinglin;Lei, Aihua;Zhang, Wenjie;Ren, Pinyun;
10:153:3 Alcohothermal synthesis of flower-like ZnS nano-microstructures with high visible light photocatalytic activity
DOI:10.1016/j.matlet.2014.03.073 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Bai, Weibin;Cai, Lifang;Wu, Chunxiang;Xiao, Xueqing;Fan, Xuelin;Chen, Kuizhi;Lin, Jinhuo;
10:153:4 Solvothermal synthesis of wurtzite ZnS complex spheres with high hierarchy
DOI:10.1016/j.matlet.2014.01.028 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Chai, Lanlan;He, Wen;Sun, Lin;Jin, Feng;Hu, Xiangyang;Ma, Jilong;
10:153:5 Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications
DOI:10.1016/j.jallcom.2010.12.199 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Nie, Tian-Xiao;Chen, Zhi-Gang;Wu, Yue-Qin;Lin, Jian-Hui;Zhang, Jiu-Zhan;Fan, Yong-Liang;Yang, Xin-Ju;Jiang, Zui-Min;Zou, Jin;
10:153:6 Zinc sulfide nanowire arrays on silicon wafers for field emitters
DOI:10.1088/0957-4484/21/6/065701 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Chen, Zhi-Gang;Cheng, Lina;Zou, Jin;Yao, Xiangdong;Lu, Gao Qing (Max);Cheng, Hui-Ming;
10:153:7 Non-catalytic and template-free growth of single crystalline copper vanadate nanowires for field emission applications
DOI:10.1016/j.matchemphys.2011.08.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:3 AU: Shahid, Muhammad;Shakir, Imran;Yang, Hyoungwoo;Rai, Padmnabh;Kang, Dae Joon;
10:153:8 Oxygen vacancy induced structural variations of exfoliated monolayer MnO2 sheets
DOI:10.1103/PhysRevB.81.081401 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Wang, Yong;Sun, Chenghua;Zou, Jin;Wang, Lianzhou;Smith, Sean;Lu, G. Q.;Cockayne, David J. H.;
10:153:9 Synthesis and characterization of ZnS nanobelts based on substitution reaction
DOI:10.1007/s00339-011-6555-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:1 AU: Jiang, Feihong;Zhang, Jun;
10:153:10 Simple and greener synthesis of highly photoluminescence Mn2+-doped ZnS quantum dots and its surface passivation mechanism
DOI:10.1016/j.apsusc.2014.07.135 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Wang, Yongbo;Liang, Xuhua;Ma, Xuan;Hu, Yahong;Hu, Xiaoyun;Li, Xinghua;Fan, Jun;
10:153:11 Copper vanadate nanowires-based MIS capacitors: synthesis, characterization, and their electrical charge storage applications
DOI:10.1007/s11051-013-1826-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Shahid, Muhammad;Nafady, Ayman;Shakir, Imran;Rana, Usman Ali;Sarfraz, Mansoor;Warsi, Muhammad Farooq;Hussain, Rafaqat;Ashiq, Muhammad Naeem;
10:153:12 Low temperature method for synthesis of ZnS quantum dots and its luminescence characterization studies
DOI:10.1016/j.apsusc.2012.09.026 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Senthilkumara, K.;Kalaivani, T.;Kanagesan, S.;Balasubramanian, V.;
10:153:13 Large scale synthesis of silicon nanowires
DOI:10.1007/s11051-010-9928-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:1 AU: Iriarte, G. F.;
10:153:14 Synthesis of complex 3D ZnS architectures via a template-free solvothermal approach and the optical properties
DOI:10.1016/j.matlet.2013.08.123 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Li, Mingyan;Wang, Fengping;Wang, Zhiyuan;Iqbal, M. Zubair;Javed, Qurat-Ul-Ain;Lu, Yanzhen;Xu, Mei;Li, Quanshui;
10:153:15 Fabrication of crystal alpha-Si3N4/Si-SiOx core-shell/Au-SiOx peapod-like axial double heterostructures for optoelectronic applications
DOI:10.1088/0957-4484/23/30/305603 JN:NANOTECHNOLOGY PY:2012
TC:3 AU: Nie, Tianxiao;Chen, Zhi-Gang;Wu, Yueqin;Guo, Yanan;Zhang, Jiuzhan;Fan, Yongliang;Yang, Xinju;Jiang, Zuimin;Zou, Jin;
10:153:16 Solvothermal preparation of flower-like ZnS microspheres, their photoluminescence and hydrogen absorption characteristics
DOI:10.1016/j.matlet.2013.08.125 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Li, Mingyan;Wang, Fengping;Wang, Zhiyuan;Iqbal, M. Zubair;Javed, Qurat-Ul-Ain;Lu, Yanzhen;Xu, Mei;Li, Quanshui;
10:153:17 Sulfur-doped gallium phosphide nanowires and their optoelectronic properties
DOI:10.1088/0957-4484/21/37/375701 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Chen, Zhi-Gang;Cheng, Lina;Lu, Gao Qing (Max);Zou, Jin;
10:153:18 Investigation on one-pot hydrothermal synthesis, structural and optical properties of ZnS quantum dots
DOI:10.1016/j.matchemphys.2012.11.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: Jothi, N. S. Nirmala;Joshi, Amish G.;Vijay, R. Jerald;Muthuvinayagam, A.;Sagayaraj, P.;
10:154:1 Fabrication and photocatalytic activities of ZnO arrays with different nanostructures
DOI:10.1016/j.apsusc.2012.09.144 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Sun, Fazhe;Qiao, Xueliang;Tan, Fatang;Wang, Wei;Qiu, Xiaolin;
10:154:2 Nucleation mechanisms and their influences on characteristics of ZnO nanorod arrays prepared by a hydrothermal method
DOI:10.1016/j.actamat.2010.09.070 JN:ACTA MATERIALIA PY:2011
TC:37 AU: Chen, Shih-Wei;Wu, Jenn-Ming;
10:154:3 Effect of the seed layer thickness on the stability of ZnO nanorod arrays
DOI:10.1016/j.tsf.2014.03.019 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Ikizler, Berrin;Peker, Sumer M.;
10:154:4 Low-temperature growth of ZnO nanorods on PET fabrics with two-step hydrothermal method
DOI:10.1016/j.apsusc.2010.02.081 JN:APPLIED SURFACE SCIENCE PY:2010
TC:29 AU: Zhou, Zhaoyi;Zhao, Yaping;Cai, Zaisheng;
10:154:5 Enhancing the photocatalytic efficiency of sprayed ZnO thin films through double doping (Sn plus F) and annealing under different ambiences
DOI:10.1016/j.apsusc.2014.10.023 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Ravichandran, K.;Mohan, R.;Sakthivel, B.;Varadharajaperumal, S.;Devendran, P.;Alagesan, T.;Pandian, K.;
10:154:6 Characterization of optoelectronic properties of the ZnO nanorod array using surface photovoltage technique
DOI:10.1016/j.apsusc.2010.08.040 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Liu, Yiting;Liu, Aimin;Liu, Weifeng;Hu, Zengquan;Sang, Yongchang;
10:154:7 Structure, morphology, photocatalytic and antibacterial activities of ZnO thin films prepared by sol-gel dip-coating method
DOI:10.1016/j.apt.2012.07.002 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:18 AU: Thongsuriwong, K.;Amornpitoksuk, P.;Suwanboon, S.;
10:154:8 Synthesis and photoluminescence properties of ZnO nanorods and nanotubes
DOI:10.1016/j.apsusc.2010.06.068 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Liu, W. J.;Meng, X. Q.;Zheng, Yi;Xia, Wei;
10:154:9 Improving electrical performance of ultrasonic spray pyrolysis grown textured ZnO films by introducing In2O3:W interface layer
DOI:10.1016/j.apsusc.2013.04.140 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Jiao, Bao-chen;Zhang, Xiao-dan;Wei, Chang-chun;Huang, Qian;Chen, Xin-liang;Zhao, Ying;
10:154:10 Synthesis and optical properties of ZnO nanorods on indium tin oxide substrate
DOI:10.1016/j.apsusc.2011.08.012 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Zheng, J. H.;Jiang, Q.;Lian, J. S.;
10:154:11 Effect of Polymers (PEG and PVP) on Sol-Gel Synthesis of Microsized Zinc Oxide
DOI:10.1155/2013/362175 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Thirugnanam, Thilagavathi;
10:154:12 Research on surface modification and infrared emissivity of In2O3: W thin films
DOI:10.1016/j.tsf.2014.09.009 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Fu, Qiang;Wang, Wenwen;Li, Dongliang;Pan, Jiaojiao;
10:154:13 Study of the morphological evolution of ZnO nanostructures on various sapphire substrates
DOI:10.1016/j.apsusc.2010.03.040 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: Kar, J. P.;Das, S. N.;Choi, J. H.;Lee, T. I.;Myoung, J. M.;
10:154:14 Facile hydrothermal synthesis of large scale ZnO nanorod arrays and their growth mechanism
DOI:10.1016/j.matlet.2013.06.003 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Zou, Xinwei;Fan, Huiqing;Tian, Yuming;Yan, Shijian;
10:154:15 Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition
DOI:10.1016/j.tsf.2011.02.056 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Liu, Yun-yan;Cheng, Chuan-fu;Yang, Shan-ying;Song, Hong-sheng;Wei, Gong-xiang;Xue, Cheng-shan;Wang, Yong-zai;
10:155:1 Fabrication and performance of N-doped ZnO UV photoconductive detector
DOI:10.1016/j.jallcom.2012.01.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:34 AU: Shinde, S. S.;Rajpure, K. Y.;
10:155:2 Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films
DOI:10.1016/j.jallcom.2012.12.104 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Gu, J. L.;Lu, Y. F.;Zhang, J.;Chen, L. X.;Ye, Z. Z.;
10:155:3 Microwave-assisted fabrication and characterization of p-ZnO:(Ag,N) nanorods/n-Si photodetector
DOI:10.1016/j.jallcom.2014.03.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Duan, Li;Wang, Pei;Wei, Feng;Yu, Xiaochen;Fan, Jibin;Xia, Huiyun;Zhu, Panpan;Tian, Yapeng;
10:155:4 Effects of post-annealing on Schottky contacts of Pt/ZnO films toward UV photodetector
DOI:10.1016/j.jallcom.2011.04.039 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:16 AU: Li, Y. Z.;Li, X. M.;Gao, X. D.;
10:155:5 Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction structures
DOI:10.1016/j.matchemphys.2011.04.058 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:17 AU: Sun, Feng;Shan, Chong-Xin;Wang, Shuang-Peng;Li, Bing-Hui;Zhang, Zhen-Zhong;Yang, Chun-Lei;Shen, De-Zhen;
10:155:6 Facile fabrication of NaTaO3 film and its photoelectric properties
DOI:10.1016/j.jallcom.2014.02.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Zhang, Min;Liu, Guohua;Zhang, Dezhong;Chen, Yu;Wen, Shanpeng;Ruan, Shengping;
10:155:7 Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors
DOI:10.1063/1.4768786 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Lin, Tzu-Shun;Lee, Ching-Ting;
10:155:8 TiO2 ultraviolet detector based on LaAlO3 substrate with low dark current
DOI:10.1016/j.jallcom.2013.07.161 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Lv, Kaibo;Zhang, Min;Liu, Caixia;Liu, Guohua;Li, Huachen;Wen, Shanpeng;Chen, Yu;Ruan, Shengping;
10:155:9 Annealing effects on properties of Ag-N dual-doped ZnO films
DOI:10.1016/j.apsusc.2012.06.075 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Duan, Li;Zhang, Wenxue;Yu, Xiaochen;Jiang, Ziqiang;Luan, Lijun;Chen, Yongnan;Li, Donglin;
10:155:10 Performance improvement mechanisms of i-ZnO/(NH4)(2)S-x-treated AlGaN MOS diodes
DOI:10.1016/j.apsusc.2012.05.055 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Lee, Ching-Ting;Chiou, Ya-Lan;Lee, Hsin-Ying;Chang, Kuo-Jen;Lin, Jia-Ching;Chuang, Hao-Wei;
10:155:11 The effect of NH3 concentrations on the electrical properties of N-doped ZnO and study on mechanism
DOI:10.1016/j.jallcom.2010.09.032 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Tang Li-dan;Wang Bing;Zhang Yue;
10:155:12 Mechanisms of high quality i-ZnO thin films deposition at low temperature by vapor cooling condensation technique
DOI:10.1063/1.3477325 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Lee, Hsin-Ying;Xia, Shang-Da;Zhang, Wei-Ping;Lou, Li-Ren;Yan, Jheng-Tai;Lee, Ching-Ting;
10:155:13 Electrode effect on high-detectivity ultraviolet photodetectors based on perovskite oxides
DOI:10.1063/1.4845775 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Zhou, Wen-jia;Jin, Kui-juan;Guo, Hai-zhong;Ge, Chen;He, Meng;Lu, Hui-bin;
10:155:14 Photoresponse of n-ZnO/p-Si photodiodes to violet-green bandwidth light caused by defect states
DOI:10.1016/j.tsf.2013.07.068 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Cho, Seong Gook;Lee, Dong Uk;Kim, Eun Kyu;
10:155:15 Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O-2
DOI:10.1016/j.jallcom.2010.02.194 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Chang, P. C.;Su, Y. K.;Lee, K. J.;Yu, C. L.;Chang, S. J.;Liu, C. H.;
10:155:16 Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering
DOI:10.1016/j.tsf.2012.05.026 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Cho, Seong Gook;Lee, Dong Uk;Pak, Sang Woo;Nahm, Tschang-Uh;Kim, Eun Kyu;
10:156:1 Electrical conduction and NO2 gas sensing properties of ZnO nanorods
DOI:10.1016/j.apsusc.2014.02.083 JN:APPLIED SURFACE SCIENCE PY:2014
TC:10 AU: Sahin, Yasin;Ozturk, Sadullah;Kilinc, Necmettin;Kosemen, Arif;Erkovan, Mustafa;Ozturk, Zafer Ziya;
10:156:2 Hydrogen sensing properties of ZnO nanorods: Effects of annealing, temperature and electrode structure
DOI:10.1016/j.ijhydene.2014.01.066 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:9 AU: Ozturk, Sadullah;Kilinc, Necmettin;Torun, Imren;Kosemen, Arif;Sahin, Yasin;Ozturk, Zafer Ziya;
10:156:3 Structural, electrical transport and NO2 sensing properties of Y-doped ZnO thin films
DOI:10.1016/j.jallcom.2012.04.104 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:21 AU: Kilinc, Necmettin;Ozturk, Sadullah;Arda, Lutfi;Altindal, Ahmet;Ozturk, Zafer Ziya;
10:156:4 Synthesis, structural characterization and photoluminescent properties of mesoporous ZnO by direct precipitation with lignin-phosphate quaternary ammonium salt
DOI:10.1016/j.jallcom.2012.10.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:12 AU: Guo, Yuan-Ru;Yu, Fang-Dan;Fang, Gui-Zhen;Pan, Qing-Jiang;
10:156:5 Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes
DOI:10.1016/j.jallcom.2013.11.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Garino, Nadia;Lamberti, Andrea;Gazia, Rossana;Chiodoni, Angelica;Gerbaldi, Claudio;
10:156:6 Control growth of catalyst-free high-quality ZnO nanowire arrays on transparent quartz glass substrate by chemical vapor deposition
DOI:10.1016/j.apsusc.2010.10.100 JN:APPLIED SURFACE SCIENCE PY:2011
TC:21 AU: Wang, X. H.;Li, R. B.;Fan, D. H.;
10:156:7 Fabrication of ZnO nanorods for NO2 sensor applications: Effect of dimensions and electrode position
DOI:10.1016/j.jallcom.2013.07.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:14 AU: Ozturk, Sadullah;Kilinc, Necmettin;Ozturk, Zafer Ziya;
10:156:8 Photodetection and piezoelectric response from hard and flexible sponge-like ZnO-based structures
DOI:10.1016/j.nanoen.2013.06.010 JN:NANO ENERGY PY:2013
TC:4 AU: Gazia, Rossana;Motto, Paolo;Stassi, Stefano;Sacco, Adriano;Virga, Alessandro;Lamberti, Andrea;Canavese, Giancarlo;
10:156:9 A comparative study on the NO2 gas sensing properties of ZnO thin films, nanowires and nanorods
DOI:10.1016/j.tsf.2011.04.177 JN:THIN SOLID FILMS PY:2011
TC:32 AU: Ozturk, S.;Kilinc, N.;Tasaltin, N.;Ozturk, Z. Z.;
10:156:10 Novel spongelike nanostructured ZnO films: Properties and applications
DOI:10.1016/j.jallcom.2013.01.149 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Gazia, R.;Canavese, G.;Chiodoni, A.;Lamberti, A.;Stassi, S.;Sacco, A.;Bianco, S.;Virga, A.;Tresso, E.;Pirri, C. F.;
10:156:11 Zinc oxide nanowires
DOI:10.1016/j.matchar.2011.11.017 JN:MATERIALS CHARACTERIZATION PY:2012
TC:14 AU: Cui, Jingbiao;
10:156:12 Catalyst-free synthesis of ZnO microrod arrays on SiC substrate and their tunable photoluminescence by erosion process
DOI:10.1016/j.jallcom.2011.04.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Zhu, Kaixing;Wang, Wenjun;Chen, Xiaolong;Liu, Jun;Song, Bo;Jiang, Liangbao;Guo, Jiangang;Cheng, Jinyang;
10:156:13 Effect of growth conditions on zinc oxide nanowire array synthesized on Si (100) without catalyst
DOI:10.1016/j.mssp.2012.05.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Rajabi, M.;Dariani, R. S.;Zad, A. Iraji;
10:156:14 Sponge-like ZnO nanostructures by low temperature water vapor-oxidation method as dye-sensitized solar cell photoanodes
DOI:10.1016/j.jallcom.2013.12.091 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Lamberti, A.;Sacco, A.;Laurenti, M.;Fontana, M.;Pirri, C. F.;Bianco, S.;
10:156:15 An easy method for the room-temperature growth of spongelike nanostructured Zn films as initial step for the fabrication of nanostructured ZnO
DOI:10.1016/j.tsf.2012.09.076 JN:THIN SOLID FILMS PY:2012
TC:11 AU: Gazia, Rossana;Chiodoni, Angelica;Bianco, Stefano;Lamberti, Andrea;Quaglio, Marzia;Sacco, Adriano;Tresso, Elena;Mandracci, Pietro;Pirri, Candido Fabrizio;
10:156:16 Highly sensitive acetic acid gas sensor based on coral-like and Y-doped SnO2 nanoparticles prepared by electrospinning
DOI:10.1016/j.matlet.2014.09.040 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Cheng, L.;Ma, S. Y.;Wang, T. T.;Luo, J.;Li, X. B.;Li, W. Q.;Mao, Y. Z.;Gz, D. J.;
10:157:1 Synthesis, Characterization, Defect Chemistry, and FET Properties of Microwave-Derived Nanoscaled Zinc Oxide
DOI:10.1021/cm902300q JN:CHEMISTRY OF MATERIALS PY:2010
TC:48 AU: Schneider, Joerg J.;Hoffmann, Rudolf C.;Engstler, Joerg;Klyszcz, Andreas;Erdem, Emre;Jakes, Peter;Eichel, Ruediger-A;Pitta-Bauermann, Luciana;Bill, Joachim;
10:157:2 EPR and photoluminescence spectroscopy studies on the defect structure of ZnO nanocrystals
DOI:10.1103/PhysRevB.86.014113 JN:PHYSICAL REVIEW B PY:2012
TC:21 AU: Kaftelen, Hulya;Ocakoglu, Kasim;Thomann, Ralf;Tu, Suyan;Weber, Stefan;Erdem, Emre;
10:157:3 Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO2 electron blocking layer
DOI:10.1063/1.4893280 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Mo, Xiaoming;Long, Hao;Wang, Haoning;Li, Songzhan;Chen, Zhao;Wan, Jiawei;Feng, Yamin;Liu, Yuping;Ouyang, Yifang;Fang, Guojia;
10:157:4 Microwave power, temperature, atmospheric and light dependence of intrinsic defects in ZnO nanoparticles: A study of electron paramagnetic resonance (EPR) spectroscopy
DOI:10.1016/j.jallcom.2014.03.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Erdem, Emre;
10:157:5 Correlation between structural and electronic order-disorder effects and optical properties in ZnO nanocrystals
DOI:10.1039/c4tc01248h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: La Porta, F. A.;Andres, J.;Vismara, M. V. G.;Graeff, C. F. O.;Sambrano, J. R.;Li, M. S.;Varela, J. A.;Longo, E.;
10:157:6 Investigation of intrinsic defects in core-shell structured ZnO nanocrystals
DOI:10.1063/1.4725478 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:20 AU: Parashar, S. K. S.;Murty, B. S.;Repp, S.;Weber, S.;Erdem, E.;
10:157:7 Preparation of polymorphic ZnO with strong orange luminescence
DOI:10.1007/s10853-009-4102-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:13 AU: Du, Gaohui;Yang, Yongqiang;Li, Tianbao;Xu, Bingshe;
10:157:8 Strong and unusual violet-blue emission in ring shaped ZnO nanocrystals
DOI:10.1039/c1jm13083h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:10 AU: Mondal, Oindrila;Pal, Mrinal;
10:157:9 An X- and Q-band Fe3+ EPR study of nanoparticles of magnetic semiconductor Zn1-xFexO
DOI:10.1016/j.jmmm.2014.03.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:4 AU: Misra, Sushil K.;Andronenko, S. I.;Thurber, A.;Punnoose, A.;Nalepa, A.;
10:157:10 ZnO Hollow Quantum Dot: A Promising Deep-UV Light Emitter
DOI:10.1021/am201270r JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:4 AU: Ouyang, G.;Yang, G. W.;
10:157:11 Raman scattering and photoluminescence studies of ZnO nanowhiskers assembled as flowers in the presence of fullerene
DOI:10.1016/j.jcrysgro.2015.03.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Baibarac, M.;Baltog, I.;Matea, A.;Lefrant, S.;
10:157:12 Acceptors in ZnO nanocrystals: A reinterpretation
DOI:10.1063/1.4773524 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Gehlhoff, W.;Hoffmann, A.;
10:157:13 Spin dynamics investigation in nanosized zinc ferrite irradiated with 200 MeV Ag15+ ions
DOI:10.1016/j.matlet.2014.02.019 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Singh, Jitendra Pal;Dixit, Gagan;Pandey, Kamla;Kumar, Hemaunt;Srivastava, R. C.;Agrawal, H. M.;Asokan, K.;
10:158:1 Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties
DOI:10.1016/j.materresbull.2014.01.022 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Kumar, R. Rakesh;Rao, K. Narasimha;Rajanna, K.;Phani, A. R.;
10:158:2 Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection
DOI:10.1016/j.materresbull.2012.12.050 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:7 AU: Kumar, R. Rakesh;Rao, K. Narasimha;Rajanna, K.;Phani, A. R.;
10:158:3 Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices
DOI:10.1088/0957-4484/23/2/025706 JN:NANOTECHNOLOGY PY:2012
TC:14 AU: Kee, Yeh Yee;Tan, Sek Sean;Yong, Thian Khok;Nee, Chen Hon;Yap, Seong Shan;Tou, Teck Yong;Safran, Gyoergy;Horvath, Zsolt Endre;Moscatello, Jason P.;Yap, Yoke Khin;
10:158:4 Novel co-evaporation approach for the growth of Sb doped SnO2 nanowires
DOI:10.1016/j.matlet.2013.04.114 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Kumar, R. Rakesh;Rao, K. Narasimha;Rajanna, K.;Phani, A. R.;
10:158:5 Epitaxial growth of visible to infra-red transparent conducting In2O3 nanodot dispersions and reversible charge storage as a Li-ion battery anode
DOI:10.1088/0957-4484/24/6/065401 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Osiak, M.;Khunsin, W.;Armstrong, E.;Kennedy, T.;Sotomayor Torres, C. M.;Ryan, K. M.;O'Dwyer, C.;
10:158:6 Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes
DOI:10.1002/adfm.201100873 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:8 AU: Phadke, Sujay;Lee, Jung-Yong;West, Jack;Peumans, Peter;Salleo, Alberto;
10:158:7 Tin doped indium oxide core-TiO2 shell nanowires on stainless steel mesh for flexible photoelectrochemical cells
DOI:10.1063/1.3684805 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Noh, Jun Hong;Ding, Bo;Han, Hyun Soo;Kim, Ju Seong;Park, Jong Hoon;Park, Sang Baek;Jung, Hyun Suk;Lee, Jung-Kun;Hong, Kug Sun;
10:158:8 Novel low-temperature growth of SnO2 nanowires and their gas-sensing properties
DOI:10.1016/j.scriptamat.2012.11.002 JN:SCRIPTA MATERIALIA PY:2013
TC:7 AU: Kumar, R. Rakesh;Parmar, Mitesh;Rao, K. Narasimha;Rajanna, K.;Phani, A. R.;
10:158:9 Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature
DOI:10.1016/j.actamat.2010.01.041 JN:ACTA MATERIALIA PY:2010
TC:13 AU: Wan, Neng;Xu, Jun;Chen, Guran;Gan, Xinhui;Guo, Sihua;Xu, Ling;Chen, Kunji;
10:158:10 Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors
DOI:10.1016/j.jallcom.2014.03.088 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Szkutnik, P. D.;Roussel, H.;Lahootun, V.;Mescot, X.;Weiss, F.;Jimenez, C.;
10:158:11 Growth and characterization of germanium nanowires by electron beam evaporation
DOI:10.1016/j.matlet.2010.05.020 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Kumar, R. Rakesh;Yuvaraj, D.;Rao, K. Narasimha;
10:158:12 Bismuth catalyzed growth of silicon nanowires by electron beam evaporation
DOI:10.1016/j.matlet.2012.05.090 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Kumar, R. Rakesh;Rao, K. Narasimha;Phani, A. R.;
10:158:13 Performance of chromophore-type electrochromic devices employing indium tin oxide nanorod optical amplification
DOI:10.1016/j.solmat.2011.10.027 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:4 AU: Huang, Jen-Hsien;Hsu, Min-Hsiang;Hsiao, Yu-Sheng;Chen, Peilin;Yu, Peichen;Chu, Chih-Wei;
10:158:14 Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires
DOI:10.1063/1.4890848 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Huh, Chul;Kim, Bong Kyu;Ahn, Chang-Geun;Choi, Chel-Jong;Kim, Sang-Hyeob;
10:158:15 H2S sensors based on SnO2 films: RGTO verses RF sputtering
DOI:10.1016/j.matchemphys.2014.06.010 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Kaur, M.;Ramgir, Niranjan S.;Gautam, U. K.;Ganapathi, S. Kailasa;Bhattacharya, S.;Datta, N.;Saxena, V.;Debnath, A. K.;Aswal, D. K.;Gupta, S. K.;
10:158:16 The reversibility of ionic transport in PEDOT with application to a complementary electrochromic device
DOI:10.1016/j.apsusc.2014.04.157 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Chiang, Tun-Yuan;Huang, Ming-Chao;Tsai, Chien-Huang;
10:159:1 Fabrication of ZnO nanoparticles based sensitive methanol sensor and efficient photocatalyst
DOI:10.1016/j.apsusc.2012.04.075 JN:APPLIED SURFACE SCIENCE PY:2012
TC:43 AU: Faisal, M.;Khan, Sher Bahadar;Rahman, Mohammed M.;Jamal, Aslam;Abdullah, M. M.;
10:159:2 Ethanol chemi-sensor: Evaluation of structural, optical and sensing properties of CuO nanosheets
DOI:10.1016/j.matlet.2011.02.013 JN:MATERIALS LETTERS PY:2011
TC:63 AU: Faisal, M.;Khan, Sher Bahadar;Rahman, Mohammed M.;Jamal, Aslam;Umar, Ahmad;
10:159:3 CuO Codoped ZnO Based Nanostructured Materials for Sensitive Chemical Sensor Applications
DOI:10.1021/am200151f JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:61 AU: Rahman, Mohammed M.;Jamal, Aslam;Khan, Sher Bahadar;Faisal, Mohd;
10:159:4 Highly sensitive ethanol chemical sensor based on Ni-doped SnO2 nanostructure materials
DOI:10.1016/j.bios.2011.07.024 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:56 AU: Rahman, Mohammed M.;Jamal, Aslam;Khan, Sher Bahadar;Faisal, M.;
10:159:5 Growth of Mn3O4 on cellulose matrix: Nanohybrid as a solid phase adsorbent for trivalent chromium
DOI:10.1016/j.apsusc.2013.01.083 JN:APPLIED SURFACE SCIENCE PY:2013
TC:16 AU: Asiri, Abdullah M.;Khan, Sher Bahadar;Alamry, Khalid A.;Marwani, Hadi M.;Rahman, Mohammed M.;
10:159:6 Selective adsorption and determination of iron(III): Mn3O4/TiO2 composite nanosheets as marker of iron for environmental applications
DOI:10.1016/j.apsusc.2013.03.180 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Khan, Sher Bahadar;Rahman, Mohammed M.;Marwani, Hadi M.;Asiri, Abdullah M.;Alamry, Khalid A.;Rub, Malik Abdul;
10:159:7 Synthesis, characterizations, photocatalytic and sensing studies of ZnO nanocapsules
DOI:10.1016/j.apsusc.2011.07.067 JN:APPLIED SURFACE SCIENCE PY:2011
TC:37 AU: Faisal, M.;Khan, Sher Bahadar;Rahman, Mohammed M.;Jamal, Aslam;Asiri, Abdullah M.;Abdullah, M. M.;
10:159:8 Comparison of the photocatalytic degradation of trypan blue by undoped and silver-doped zinc oxide nanoparticles
DOI:10.1016/j.mssp.2014.03.027 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:7 AU: Ravishankar, T. N.;Manjunatha, K.;Ramakrishnappa, T.;Nagaraju, G.;Kumar, Dhanith;Sarakar, S.;Anandakumar, B. S.;Chandrappa, G. T.;Reddy, Viswanath;Dupont, J.;
10:159:9 Cobalt doped antimony oxide nano-particles based chemical sensor and photo-catalyst for environmental pollutants
DOI:10.1016/j.apsusc.2012.07.066 JN:APPLIED SURFACE SCIENCE PY:2012
TC:15 AU: Jamal, Aslam;Rahman, Mohammed M.;Khan, Sher Bahadar;Faisal, Mohd.;Akhtar, Kalsoom;Rub, Malik Abdul;Asiri, Abdullah M.;Al-Youbi, Abdulrahman O.;
10:159:10 Characterization and applications of as-grown beta-Fe2O3 nanoparticles prepared by hydrothermal method
DOI:10.1007/s11051-011-0301-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:48 AU: Rahman, Mohammed M.;Jamal, Aslam;Khan, Sher Bahadar;Faisal, Mohd;
10:159:11 Synthesis of nanostructured manganese oxides from a dipolar binary liquid (water/benzene) system and hydrogen storage ability research
DOI:10.1016/j.ijhydene.2010.06.022 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2010
TC:6 AU: Men, Hai;Gao, Peng;Sun, Yuzeng;Chen, Yujin;Wang, Xiaona;Wang, Longqiang;
10:159:12 Ionic liquid-assisted hydrothermal synthesis of TiO2 nanoparticles and its application in photocatalysis
DOI:10.1007/s10853-013-7654-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:8 AU: Nagaraju, G.;Manjunath, K.;Ravishankar, T. N.;Ravikumar, B. S.;Nagabhushan, H.;Ebeling, G.;Dupont, J.;
10:159:13 Ionothermal synthesis of TiO2 nanoparticles: Photocatalytic hydrogen generation
DOI:10.1016/j.matlet.2013.07.031 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Nagaraju, G.;Ravishankar, T. N.;Manjunatha, K.;Sarkar, S.;Nagabhushana, H.;Goncalves, R.;Dupont, J.;
10:159:14 An efficient and a novel route for the synthesis of titania via solution combustion of peroxotitanic acid
DOI:10.1016/j.matlet.2012.09.103 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Nagabhushana, Gowdaiahnapalya Puttaiah;Ashoka, Siddaramanna;Chithaiah, Pallellappa;Chandrappa, Gujjarahalli Thimmanna;
10:159:15 Structural transformation from Mn3O4 nanorods to nanoparticles and band gap tuning via Zn doping
DOI:10.1016/j.materresbull.2011.11.057 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:8 AU: Jha, A.;Thapa, R.;Chattopadhyay, K. K.;
10:160:1 Correlation between saturation magnetization, bandgap, and lattice volume of transition metal (M=Cr, Mn, Fe, Co, or Ni) doped Zn1-xMxO nanoparticles
DOI:10.1063/1.3360189 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:42 AU: Anghel, J.;Thurber, A.;Tenne, D. A.;Hanna, C. B.;Punnoose, A.;
10:160:2 Thiol-Capped ZnO Nanowire/Nanotube Arrays with Tunable Magnetic Properties at Room Temperature
DOI:10.1021/nn901353x JN:ACS NANO PY:2010
TC:39 AU: Deng, Su-Zi;Fan, Hai-Ming;Wang, Miao;Zheng, Min-Rui;Yi, Jia-Bao;Wu, Rong-Qin;Tan, Hui-Ru;Sow, Chorng-Haur;Ding, Jun;Feng, Yuan-Ping;Loh, Kian-Ping;
10:160:3 Magnetism of ZnO nanoparticles: Dependence on crystallite size and surfactant coating
DOI:10.1063/1.3536414 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Thurber, Aaron P.;Beausoleil, Geoffrey L., II;Alanko, Gordon A.;Anghel, Joshua J.;Jones, Michael S.;Johnson, Lydia M.;Zhang, Jianhui;Hanna, C. B.;Tenne, D. A.;Punnoose, Alex;
10:160:4 Transition metal dopants essential for producing ferromagnetism in metal oxide nanoparticles
DOI:10.1103/PhysRevB.82.054419 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Johnson, Lydia M.;Thurber, Aaron;Anghel, Joshua;Sabetian, Maryam;Engelhard, Mark H.;Tenne, Dmitri A.;Hanna, Charles B.;Punnoose, Alex;
10:160:5 Microstructural analysis and paramagnetic to ferromagnetic phase transition of chemically synthesized nanoparticles of Tb-doped ZnO
DOI:10.1007/s10853-011-6042-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:1 AU: Bandyopadhyay, A.;Deb, A. K.;Mukhopadhyay, K.;Roy, S. K.;Chakrabarti, P. K.;
10:160:6 Unusual crystallite growth and modification of ferromagnetism due to aging in pure and doped ZnO nanoparticles
DOI:10.1063/1.3679147 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Thurber, Aaron P.;Alanko, Gordon;Beausoleil, Geoffrey L., II;Dodge, Kelsey N.;Hanna, C. B.;Punnoose, Alex;
10:160:7 Vacancy mediated room temperature ferromagnetism in Co-doped Dy2O3
DOI:10.1063/1.4729386 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Bandyopadhyay, A.;Sutradhar, S.;Sarkar, B. J.;Deb, A. K.;Chakrabarti, P. K.;
10:160:8 Activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine
DOI:10.1016/j.jallcom.2012.11.006 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Jayalakshmi, G.;Gopalakrishnan, N.;Balasubramanian, T.;
10:160:9 Size, surface structure, and doping effects on ferromagnetism in SnO2
DOI:10.1063/1.3679455 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Alanko, Gordon A.;Thurber, Aaron;Hanna, Charles B.;Punnoose, Alex;
10:160:10 Dopant spin states and magnetism of Sn1-xFexO2 nanoparticles
DOI:10.1063/1.4869285 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Punnoose, A.;Dodge, Kelsey;Beltran, J. J.;Reddy, K. M.;Franco, Nevil;Chess, Jordan;Eixenberger, Josh;Barrero, C. A.;
10:160:11 Micro-structural investigations and paramagnetic susceptibilities of zinc oxide, europium oxide and their nanocomposite
DOI:10.1016/j.jmmm.2009.09.030 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:9 AU: Modak, S.;Acharya, S.;Bandyopadhyay, A.;Karan, S.;Roy, S. K.;Chakrabarti, P. K.;
10:160:12 Magnetism induced by capping of non-magnetic ZnO nanoparticles
DOI:10.1007/s11051-011-0257-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:10 AU: Hernando, A.;Garcia, M. A.;
10:160:13 Fluctuant magnetism in metal oxide nanocrystals capped with surfactants
DOI:10.1103/PhysRevB.88.085437 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Zhang, Jianhui;Xiong, Shijie;Wu, Xinglong;Thurber, Aaron;Jones, Michael;Gu, Min;Pan, Zhongda;Tenne, Dmitri A.;Hanna, Charles B.;Du, Youwei;Punnoose, Alex;
10:160:14 Room temperature ferromagnetism in Fe-doped europium oxide (Eu1.90Fe0.10O3-delta)
DOI:10.1016/j.jallcom.2014.05.111 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Bandyopadhyay, A.;Deb, A. K.;Kobayashi, S.;Yoshimura, K.;Chakrabarti, P. K.;
10:160:15 Ferromagnetic and optical properties of Co doped ZnO hexagonal bipods
DOI:10.1063/1.4757921 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Guo, Ting;Zhang, Yujung;Luo, Yidong;Nan, Ce-Wen;Lin, Yuan-Hua;
10:160:16 Correlation between magnetism and electronic structure of Zn1-xCoxO nanoparticles
DOI:10.1063/1.4794355 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Chess, Jordan;Alanko, Gordon;Tenne, Dmitri A.;Hanna, Charles B.;Punnoose, Alex;
10:160:17 Role of oxygen defects on the magnetic properties of ultra-small Sn1-xFexO2 nanoparticles
DOI:10.1063/1.4794140 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Dodge, Kelsey;Chess, Jordan;Eixenberger, Josh;Alanko, Gordon;Hanna, Charles B.;Punnoose, Alex;
10:160:18 Ostwald Ripening of the Platinum Nanoparticles in the Framework of the Modified LSW Theory
DOI:10.1155/2014/821584 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Vengrenovich, R. D.;Ivanskii, B. V.;Panko, I. I.;Yarema, S. V.;Kryvetskyi, V. I.;Stasyk, M. O.;
10:160:19 Extrinsic origin of room-temperature ferromagnetism in Co-doped ZnO annealed in Zn vapor
DOI:10.1063/1.3624601 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Yan, Guoqing;Xuan, Haicheng;
10:160:20 Magnetical behaviors observed in nanostructured ZnO with different morphologies
DOI:10.1016/j.matlet.2013.07.012 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Guo, Ting;Zhang, Yujung;Luo, Yidong;Nan, Ce-Wen;Lin, Yuan-Hua;
10:160:21 Influence of internal stress on the optical properties of CdS:Cu nanoparticles
DOI:10.1016/j.optmat.2012.12.016 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Lozada-Morales, R.;Portillo-Moreno, O.;Tomas, S. A.;Zelaya-Angel, O.;
10:160:22 Effect of Co Doping on the Properties of ZnO Bulk Samples
DOI:10.1007/s11664-012-2394-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Francis, S.;Saravanan, R.;Berchmans, L. John;
10:160:23 Magnetic phase transition of nanocrystalline Fe-doped samarium oxide (Sm1.90Fe0.10O3)
DOI:10.1016/j.jmmm.2014.06.068 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:0 AU: Mandal, J.;Sarkar, B. J.;Deb, A. K.;Chakrabarti, P. K.;
10:161:1 Junction properties of Au/ZnO single nanowire Schottky diode
DOI:10.1063/1.3339883 JN:APPLIED PHYSICS LETTERS PY:2010
TC:29 AU: Das, Sachindra Nath;Choi, Ji-Huck;Kar, Jyoti Prakash;Moon, Kyeong-Ju;Il Lee, Tae;Myoung, Jae-Min;
10:161:2 Electronic properties of light-emitting p-n hetero-junction array consisting of p(+)-Si and aligned n-ZnO nanowires
DOI:10.1063/1.4792302 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Bae, Min Young;Min, Kyung Whon;Yoon, Jangyeol;Kim, Gyu-Tae;Ha, Jeong Sook;
10:161:3 Tunable charge transport through n-ZnO nanorods on Au coated macroporous p-Si
DOI:10.1039/c4tc01556h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Jana, Arpita;Ghosh, Siddhartha;Devi, P. Sujatha;Bandyopadhyay, Nil Ratan;Ray, Mallar;
10:161:4 Fabrication of a Large-Area Al-Doped ZnO Nanowire Array Photosensor with Enhanced Photoresponse by Straining
DOI:10.1002/adfm.201200344 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:16 AU: Wang, Ruey-Chi;Lin, Hsin-Ying;Wang, Chao-Hung;Liu, Chuan-Pu;
10:161:5 Rigorous analysis of image force barrier lowering in bounded geometries: application to semiconducting nanowires
DOI:10.1088/0957-4484/25/14/145203 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Calahorra, Yonatan;Mendels, Dan;Epstein, Ariel;
10:161:6 Nanoscale contacts between semiconducting nanowires and metallic graphenes
DOI:10.1063/1.4745210 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kim, Seongmin;Janes, David B.;Choi, Sung-Yool;Ju, Sanghyun;
10:161:7 Electrostatics and electrical transport in semiconductor nanowire Schottky diodes
DOI:10.1063/1.4765653 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Hsu, Cheng-Han;Wang, Qiaoming;Tao, Xin;Gu, Yi;
10:161:8 Fabrication and characterization of well-aligned, high density ZnO nanowire arrays and their realizations in Schottky device applications using a two-step approach
DOI:10.1039/c1jm10496a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:19 AU: Wen, Liaoyong;Wong, Kin Mun;Fang, Yaoguo;Wu, Minghong;Lei, Yong;
10:161:9 Hybrid nanowire-multilayer graphene film light-emitting sources
DOI:10.1088/0957-4484/21/42/425203 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Kim, Sangdan;Choi, Hongkyw;Jung, Mi;Choi, Sung-Yool;Ju, Sanghyun;
10:161:10 Analysis and design principles for shear-mode piezoelectric energy harvesting with ZnO nanoribbons
DOI:10.1088/0964-1726/19/5/055027 JN:SMART MATERIALS & STRUCTURES PY:2010
TC:17 AU: Majidi, C.;Haataja, M.;Srolovitz, D. J.;
10:161:11 Electrostatics and electrical transport in semiconductor nanowire Schottky diodes (vol 101, 183103, 2012)
DOI:10.1063/1.4767342 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Hsu, Cheng-Han;Wang, Qiaoming;Tao, Xin;Gu, Yi;
10:161:12 The evolution of well-aligned amorphous carbon nanotubes and porous ZnO/C core-shell nanorod arrays for photosensor applications
DOI:10.1088/0957-4484/22/3/035704 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Wang, Ruey-Chi;Hsu, Chia-Chi;Chen, Shu-Jen;
10:162:1 High mobility transparent conducting oxides for thin film solar cells
DOI:10.1016/j.tsf.2009.09.044 JN:THIN SOLID FILMS PY:2010
TC:145 AU: Calnan, S.;Tiwari, A. N.;
10:162:2 Huge Photoresistance in Transparent and Conductive Indium Titanium Oxide Films Prepared by Electron Beam-Physical Vapor Deposition
DOI:10.1021/am404675n JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Martinez-Morillas, Rocio;Ramirez, Rafael;Sanchez-Marcos, Jorge;Fonda, Emiliano;de Andres, Alicia;Prieto, Carlos;
10:162:3 Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2011.08.060 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Yan, L. T.;Schropp, R. E. I.;
10:162:4 Coexistence of anion and cation vacancy defects in vacuum-annealed In2O3 thin films
DOI:10.1016/j.scriptamat.2009.10.001 JN:SCRIPTA MATERIALIA PY:2010
TC:11 AU: Sudakar, C.;Dixit, A.;Kumar, Sanjiv;Sahana, M. B.;Lawes, G.;Naik, R.;Naik, V. M.;
10:162:5 Electrical properties of vacuum-annealed titanium-doped indium oxide films
DOI:10.1016/j.apsusc.2011.06.035 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Yan, L. T.;Rath, J. K.;Schropp, R. E. I.;
10:162:6 Effects of Rapid Thermal Annealing on Electrical Transport in Heavily Doped ZnO Thin Films Deposited at Different Substrate Temperatures
DOI:10.1007/s11664-014-3254-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Zhu, Ke;Yang, Ye;Huang, Jinhua;Lu, Yuehui;Li, Jia;Tan, Ruiqin;Cui, Ping;Song, Weijie;
10:162:7 Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering
DOI:10.1016/j.apsusc.2012.12.133 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Chaoumead, Accarat;Joo, Bong-Hyun;Kwak, Dong-Joo;Sung, Youl-Moon;
10:162:8 Preparation of Titanium-doped Indium Oxide Films by Ultrasonic Spray Pyrolysis Method
DOI:10.1080/00150193.2013.842791 JN:FERROELECTRICS PY:2013
TC:0 AU: Panyata, Surapong;Eitssayeam, Sukum;Rujijanagul, Gobwut;Tunkasiri, Tawee;Sirisoonthorn, Sumnuk;Pengpat, Kamonpan;
10:162:9 First principles study on the p-type transparent conducting properties of rutile Ti1-xInxO2
DOI:10.1016/j.jallcom.2012.06.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Niu, Mang;Cheng, Daojian;Huo, Lingjun;Shao, Xiaohong;
10:162:10 Electron emission of Au nanoparticles embedded in ZnO for highly conductive oxide
DOI:10.1063/1.4870648 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Huang, Po-Shun;Kim, Dong Hoe;Lee, Jung-Kun;
10:162:11 Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study
DOI:10.1016/j.apsusc.2010.05.033 JN:APPLIED SURFACE SCIENCE PY:2010
TC:9 AU: Tripathi, Neeti;Rath, Shyama;Ganesan, V.;Choudhary, R. J.;
10:162:12 Tailoring the Structural and Optoelectronic Properties of Al-Doped Nanocrystalline ZnO Thin Films
DOI:10.1007/s11664-010-1428-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:8 AU: Periasamy, C.;Chakrabarti, P.;
10:162:13 Effects of surface treatments on high mobility ITiO coated glass substrates for dye sensitized solar cells and their tandem solar cell applications
DOI:10.1016/j.solmat.2009.10.023 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:8 AU: Bowers, J. W.;Upadhyaya, H. M.;Nakada, T.;Tiwari, A. N.;
10:162:14 Corrosion behavior in simulated environments of ITZO films prepared by two targets co-sputtering
DOI:10.1016/j.ceramint.2013.12.129 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Zhang, Bo;Wu, Zhengyong;Tao, Yongde;
10:162:15 Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates
DOI:10.1016/j.apsusc.2013.08.024 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Tseng, Kun-San;Lo, Yu-Lung;
10:162:16 Optimization of indium tin oxide by pulsed DC power on single junction amorphous silicon solar cells
DOI:10.1016/j.tsf.2011.03.035 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Carlson, Rebecca K.;Shim, Yunsic;Ingler, William B., Jr.;
10:163:1 Multipod structures of ZnO hydrothermally grown in the presence of Zn3P2
DOI:10.1016/j.materresbull.2010.07.026 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:11 AU: Peiteado, Marco;Jardiel, Teresa;Rubio, Fausto;Caballero, Amador C.;
10:163:2 Hydrothermal synthesis of dumbbell-shaped ZnO microstructures
DOI:10.1016/j.ceramint.2013.04.096 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Wang, Feng;Qin, Xiaofang;Guo, Zhenliang;Meng, Yanfeng;Yang, Lixia;Ming, Yongfei;
10:163:3 Formation of nanosize ZnO particles by thermal decomposition of zinc acetylacetonate monohydrate
DOI:10.1016/j.ceramint.2009.12.008 JN:CERAMICS INTERNATIONAL PY:2010
TC:24 AU: Music, Svetozar;Saric, Ankica;Popovic, Stanko;
10:163:4 Synthesis and characterization of ZnO with hexagonal dumbbell-like bipods microstructures
DOI:10.1016/j.apt.2011.05.011 JN:ADVANCED POWDER TECHNOLOGY PY:2011
TC:8 AU: Liu, Yumin;Lv, Hua;Li, Shuangqing;Xi, Guoxi;Xing, Xinyan;
10:163:5 One-step solution synthesis of urchin-like ZnO superstructures from ZnO rods
DOI:10.1016/j.ceramint.2012.08.077 JN:CERAMICS INTERNATIONAL PY:2013
TC:5 AU: Tang, Lanqin;Tian, Yumei;Liu, Yanhua;Wang, Zichen;Zhou, Bing;
10:163:6 Microstructural and optical investigations on sonochemically synthesized Cu doped ZnO nanobricks
DOI:10.1016/j.ceramint.2014.03.119 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Sahu, Dojalisa;Panda, N. R.;Acharya, B. S.;Panda, A. K.;
10:163:7 The synthesis of zinc oxide nanoparticles from zinc acetylacetonate hydrate and 1-butanol or isobutanol
DOI:10.1016/j.jcis.2010.03.001 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:28 AU: Ambrozic, Gabriela;Skapin, Sreco D.;Zigon, Majda;Orel, Zorica Crnjak;
10:163:8 Synthesis and characterization of ZnO microstructures via a cationic surfactant-assisted hydrothermal microemulsion process
DOI:10.1016/j.matchar.2011.03.010 JN:MATERIALS CHARACTERIZATION PY:2011
TC:13 AU: Liu, Yumin;Lv, Hua;Li, Shuangqing;Xi, Guoxi;Xing, Xinyan;
10:163:9 Synthesis, characterization and optical properties of star-like ZnO nanostructures
DOI:10.1016/j.matlet.2010.01.029 JN:MATERIALS LETTERS PY:2010
TC:19 AU: Peng, Zhiwei;Dai, Guozhang;Chen, Peng;Zhang, Qinglin;Wan, Qiang;Zou, Bingsuo;
10:163:10 Soft solution processing of ZnO nanoarrays by combining electrophoretic deposition and hydrothermal growth
DOI:10.1016/j.matchemphys.2013.02.067 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Verde, Maria;Peiteado, Marco;Villegas, Marina;Ferrari, Begona;Caballero, Amador C.;
10:163:11 The competition growth of ZnO microrods and nanorods in chemical bath deposition process
DOI:10.1016/j.materresbull.2009.11.005 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:9 AU: Yang, Zhan;Shi, Yuan-Yuan;Sun, Xi-Lian;Cao, Hong-Tao;Lu, Huan-Ming;Liu, Xu-Dong;
10:163:12 Morphology-tuned growth of ZnO microstructures
DOI:10.1016/j.materresbull.2009.12.011 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:26 AU: Wu, Junshu;Xue, Dongfeng;
10:163:13 Formation of hollow ZnO particles by simple hydrolysis of zinc acetylacetonate
DOI:10.1016/j.ceramint.2012.04.020 JN:CERAMICS INTERNATIONAL PY:2012
TC:9 AU: Music, Svetozar;Saric, Ankica;
10:163:14 Development of ZnO microstructures produced by rapid hydrolysis of zinc acetylacetonate
DOI:10.1016/j.ceramint.2014.03.095 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Petrovic, Zeljka;Ristic, Mira;Music, Svetozar;
10:163:15 Characterization of precursor-based ZnO transport layers in inverted polymer solar cells
DOI:10.1039/c4tc01393j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Grossiord, Nadia;de Bruyn, Paul;Moet, Date J. D.;Andriessen, Ronn;Blom, Paul W. M.;
10:163:16 Synthesis, characterization and optical properties of sheet-like ZnO
DOI:10.1016/j.materresbull.2011.05.012 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Liu, Changzhen;Meng, Dawei;Wu, Xiuling;Wang, Yongqian;Yu, Xiaohong;Zhang, Zhengjie;Liu, Xiaoyang;
10:163:17 The formation of zinc oxide nanoparticles from zinc acetylacetonate hydrate in tert-butanol: A comparative mechanistic study with isomeric C4 alcohols as the media
DOI:10.1016/j.materresbull.2011.08.018 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:5 AU: Ambrozic, Gabriela;Skapin, Sreco D.;Zigon, Majda;Orel, Zorica Crnjak;
10:164:1 The Fowler-Nordheim Plot Behavior and Mechanism of Field Electron Emission from ZnO Tetrapod Structures
DOI:10.1021/nn1008403 JN:ACS NANO PY:2010
TC:33 AU: Al-Tabbakh, Ahmed A.;More, Mahendra A.;Joag, Dilip S.;Mulla, Imtiaz S.;Pillai, Vijayamohanan K.;
10:164:2 Shape Dependent Synthesis and Field Emission Induced Rectification in Single ZnS Nanocrystals
DOI:10.1021/am501165p JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Thupakula, Umamahesh;Dalui, Amit;Debangshi, Anupam;Bal, Jayanta K.;Kumar, Gundam S.;Acharya, Somobrata;
10:164:3 Hierarchical Nanostructured ZnO with Nanorods Engendered to Nanopencils and Pin-Cushion Cactus with Its Field Emission Study
DOI:10.1021/am200686p JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:27 AU: Warule, Sambhaji S.;Chaudhari, Nilima S.;Ambekar, Jalindar D.;Kale, Bharat B.;More, Mahendra A.;
10:164:4 Organization of cubic CeO2 nanoparticles on the edges of self assembled tapered ZnO nanorods via a template free one-pot synthesis: significant cathodoluminescence and field emission properties
DOI:10.1039/c2jm30226h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:22 AU: Warule, Sambhaji S.;Chaudhari, Nilima S.;Kale, Bharat B.;Patil, Kashinath R.;Koinkar, Pankaj M.;More, Mahendra A.;Murakami, Ri-ichi;
10:164:5 Enhanced Field-Emission from SnO2:WO2.72 Nanowire Heterostructures
DOI:10.1021/am2011977 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:11 AU: Shinde, Deodatta R.;Chavan, Padmakar G.;Sen, Shashwati;Joag, Dilip S.;More, Mahendra A.;Gadkari, S. C.;Gupta, S. K.;
10:164:6 Size controlled ultranarrow PbS nanorods: spectroscopy and robust stability
DOI:10.1039/c0jm03665j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:18 AU: Khan, Ali Hossain;Ji, Qingmin;Ariga, Katsuhiko;Thupakula, Umamahesh;Acharya, Somobrata;
10:164:7 Vapor-Liquid-Solid Growth of One-Dimensional Tin Sulfide (SnS) Nanostructures with Promising Field Emission Behavior
DOI:10.1021/am405039j JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Suryawanshi, Sachin R.;Warule, Sambhaji S.;Patil, Sandip S.;Patil, Kashinath R.;More, Mahendra A.;
10:164:8 Chemically Programmed Ultrahigh Density Two-Dimensional Semiconductor Superlattice Array
DOI:10.1021/ja908868b JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:21 AU: Pradhan, Narayan;Acharya, Somobrata;Ariga, Katsuhiko;Karan, Niladri S.;Sarma, D. D.;Wada, Yoshiki;Efrima, Shlomo;Golan, Yuval;
10:164:9 Improved field emission and photocatalysis properties of cacti-like zinc oxide nanostructures
DOI:10.1016/j.scriptamat.2012.10.003 JN:SCRIPTA MATERIALIA PY:2013
TC:8 AU: Pawar, Rajendra C.;Kim, Hyung-sub;Lee, Caroline S.;
10:164:10 Ultranarrow PbS Nanorod-Nematic Liquid Crystal Blend for Enhanced Electro-optic Properties
DOI:10.1021/am100599y JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:26 AU: Kundu, Sudarshan;Hill, Jonathan P.;Richards, Gary J.;Ariga, Katsuhiko;Khan, Ali Hossain;Thupakula, Umamahesh;Acharya, Somobrata;
10:164:11 Current rectification by a single ZnS nanorod probed using a scanning tunneling microscopic technique
DOI:10.1039/c3tc31850h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Thupakula, Umamahesh;Bal, Jayanta K.;Dalui, Amit;Debangshi, Anupam;Sarma, D. D.;Acharya, Somobrata;
10:164:12 Dye sensitized solar cells based on zinc oxide bottle brush
DOI:10.1016/j.matlet.2011.04.045 JN:MATERIALS LETTERS PY:2011
TC:19 AU: Pawar, R. C.;Shaikh, J. S.;Shinde, P. S.;Patil, P. S.;
10:164:13 Improved Mechanical Stability of Acetoxypropyl Cellulose upon Blending with Ultranarrow PbS Nanowires in Langmuir Mono layer Matrix
DOI:10.1021/la402753n JN:LANGMUIR PY:2013
TC:2 AU: Maji, Subrata;Kundu, Sudarshan;Pinto, L. F. V.;Godinho, M. H.;Khan, Ali Hossain;Acharya, Somobrata;
10:164:14 Synthesis and cathodoluminescence properties of CdSe/ZnO hierarchical nanostructures
DOI:10.1039/c0jm03495a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:7 AU: Reddy, N. Koteeswara;Devika, M.;Shpaisman, Nava;Ben-Ishai, Moshit;Patolsky, Fernando;
10:164:15 Architectured Bi2S3 nanoflowers: photoenhanced field emission study
DOI:10.1007/s11051-012-0889-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:1 AU: Warule, Sambhaji S.;Kashid, Ranjit V.;Shinde, Deodatta R.;Chaudhari, Nilima S.;Kale, Bharat B.;More, Mahendra A.;
10:164:16 Electric field induced transition from electron-only to hole-only conduction in polymer-fullerene metal-insulator-metal devices
DOI:10.1063/1.4767455 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Chiguvare, Zivayi;
10:164:17 Hydrothermal synthesis of rutile TiO2 bottle brush for efficient dye-sensitized solar cells
DOI:10.1007/s11051-014-2406-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Mali, Sawanta S.;Patil, J. V.;Kadam, P. M.;Deshamukh, H. P.;Shim, Chang Su;Patil, Pramod S.;Hong, Chang Kook;
10:165:1 Surface morphology effects on the light-controlled wettability of ZnO nanostructures
DOI:10.1016/j.apsusc.2012.05.011 JN:APPLIED SURFACE SCIENCE PY:2012
TC:21 AU: Khranovskyy, V.;Ekblad, T.;Yakimova, R.;Hultman, L.;
10:165:2 Tunable surface wettability of ZnO nanorods prepared by two-step method
DOI:10.1016/j.apsusc.2011.03.113 JN:APPLIED SURFACE SCIENCE PY:2011
TC:19 AU: Lv, Jianguo;Zhu, Jianbo;Huang, Kai;Meng, Fanming;Song, Xueping;Sun, Zhaoqi;
10:165:3 Hydrophobic/hydrophilic switching on zinc oxide micro-textured surface
DOI:10.1016/j.apsusc.2012.10.024 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Myint, Myo Tay Zar;Kumar, Nithin Senthur;Hornyak, Gabor Louis;Dutta, Joydeep;
10:165:4 Effect of methanol ratio in mixed solvents on optical properties and wettability of ZnO films by cathodic electrodeposition
DOI:10.1016/j.jallcom.2014.06.178 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Zhang, Miao;Xu, Kai;Jiang, Xishun;Yang, Lei;He, Gang;Song, Xueping;Sun, Zhaoqi;Lv, Jianguo;
10:165:5 The role of seeding in the morphology and wettability of ZnO nanorods films on different substrates
DOI:10.1016/j.apsusc.2013.04.069 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Rodriguez, Juan;Onna, Diego;Sanchez, Luis;Claudia Marchi, M.;Candal, Roberto;Ponce, Silvia;Bilmes, Sara A.;
10:165:6 Reversible wettability of nanostructured ZnO thin films by sol-gel method
DOI:10.1016/j.apsusc.2010.02.080 JN:APPLIED SURFACE SCIENCE PY:2010
TC:17 AU: Lue, Jianguo;Kai Huang;Chen, Xuemei;Zhu, Jianbo;Meng, Fanming;Song, Xueping;Sun, Zhaoqi;
10:165:7 Facile Synthesis of Zn1-xCuxO Nanorods with a Very Broad Visible Band
DOI:10.1007/s13391-012-2044-8 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:2 AU: Lv, Jianguo;Liu, Changlong;Gong, Wanbing;Zi, Zhenfa;Chen, Xiaoshuang;Huang, Kai;Liu, Feng;Wang, Tao;He, Gang;Song, Xueping;Sun, Zhaoqi;
10:165:8 Study of intrinsic white light emission and its components from ZnO-nanorods/p-polymer hybrid junctions grown on glass substrates
DOI:10.1007/s10853-011-5708-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:6 AU: Hussain, I.;Bano, N.;Hussain, S.;Nur, O.;Willander, M.;
10:165:9 Selective homoepitaxial growth and luminescent properties of ZnO nanopillars
DOI:10.1088/0957-4484/22/18/185603 JN:NANOTECHNOLOGY PY:2011
TC:13 AU: Khranovskyy, V.;Tsiaoussis, I.;Hultman, L.;Yakimova, R.;
10:165:10 Conical surface structures on model thin-film electrodes and tape-cast electrode materials for lithium-ion batteries
DOI:10.1007/s00339-012-7205-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:12 AU: Kohler, R.;Proell, J.;Bruns, M.;Ulrich, S.;Seifert, H. J.;Pfleging, W.;
10:165:11 Control of wettability of hydrogenated amorphous carbon thin films by laser-assisted micro- and nanostructuring
DOI:10.1016/j.apsusc.2011.02.126 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Pfleging, Wilhelm;Kohler, Robert;Torge, Maika;Trouillet, Vanessa;Danneil, Friederike;Stueber, Michael;
10:165:12 Heteroepitaxial ZnO nano hexagons on p-type SiC
DOI:10.1016/j.jcrysgro.2009.09.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:17 AU: Khranovskyy, V.;Tsiaoussis, I.;Yazdi, G. R.;Hultman, L.;Yakimova, R.;
10:165:13 A new approach for rapid electrolyte wetting in tape cast electrodes for lithium-ion batteries
DOI:10.1039/c4ta02353f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:5 AU: Pfleging, Wilhelm;Proella, Johannes;
10:165:14 Enhanced photo-induced hydrophilicity of the sol-gel-derived ZnO thin films by Na-doping
DOI:10.1016/j.apsusc.2010.09.054 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Lue, Jianguo;Huang, Kai;Chen, Xuemei;Zhu, Jianbo;Meng, Fanming;Song, Xueping;Sun, Zhaoqi;
10:165:15 Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates
DOI:10.1063/1.3549140 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Tsiaoussis, I.;Khranovskyy, V.;Dimitrakopulos, G. P.;Stoemenos, J.;Yakimova, R.;Pecz, B.;
10:165:16 Microstructure, wettability and optical characteristics of ZnO/In2O3 thin films
DOI:10.1016/j.mseb.2010.10.014 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:4 AU: Sirbu, D.;Rambu, A. P.;Rusu, G. I.;
10:165:17 Tailoring the morphology of electrodeposited ZnO and its photoluminescence properties
DOI:10.1016/j.optmat.2010.09.010 JN:OPTICAL MATERIALS PY:2011
TC:4 AU: Cui, H.;Mollar, M.;Mari, B.;
10:166:1 Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells
DOI:10.1016/j.tsf.2009.09.189 JN:THIN SOLID FILMS PY:2010
TC:75 AU: Fay, Sylvie;Steinhauser, Jerome;Nicolay, Sylvain;Ballif, Christophe;
10:166:2 Growth of ZnOx:Al by high-throughput CVD at atmospheric pressure
DOI:10.1016/j.jcrysgro.2012.03.007 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:21 AU: Illiberi, A.;Simons, P. J. P. M.;Kniknie, B.;van Deelen, J.;Theelen, M.;Zeman, M.;Tijssen, M.;Zijlmans, W.;Steijvers, H. L. A. H.;Habets, D.;Janssen, A. C.;Beckers, E. H. A.;
10:166:3 Industrial high-rate (similar to 14 nm/s) deposition of low resistive and transparent ZnOx:Al films on glass
DOI:10.1016/j.solmat.2011.01.007 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:23 AU: Illiberi, A.;Kniknie, B.;van Deelen, J.;Steijvers, H. L. A. H.;Habets, D.;Simons, P. J. P. M.;Janssen, A. C.;Beckers, E. H. A.;
10:166:4 A study of ZnO:B films for thin film silicon solar cells
DOI:10.1016/j.apsusc.2012.07.117 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Yin, J.;Zhu, H.;Wang, Y.;Wang, Z.;Gao, J.;Mai, Y.;Ma, Y.;Wan, M.;Huang, Y.;
10:166:5 Improving solar cell efficiency with optically optimised TCO layers
DOI:10.1016/j.solmat.2012.01.037 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:14 AU: Fleischer, K.;Arca, E.;Shvets, I. V.;
10:166:6 Tuning the crystallographic, morphological, optical and electrical properties of ZnO:Al grown by spray pyrolysis
DOI:10.1016/j.tsf.2013.08.110 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Arca, Elisabetta;Fleischer, Karsten;Shvets, Igor;
10:166:7 Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide
DOI:10.1063/1.4747942 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Ponomarev, M. V.;Verheijen, M. A.;Keuning, W.;van de Sanden, M. C. M.;Creatore, M.;
10:166:8 Aluminium doped Zn1-xMgxO-A transparent conducting oxide with tunable optical and electrical properties
DOI:10.1063/1.4753937 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Fleischer, K.;Arca, E.;Smith, C.;Shvets, I. V.;
10:166:9 Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments
DOI:10.1016/j.tsf.2013.08.009 JN:THIN SOLID FILMS PY:2014
TC:2 AU: van Deelen, J.;Illiberi, A.;Kniknie, B.;Beckers, E. H. A.;Simons, P. J. P. M.;Lankhorst, A.;
10:166:10 Measurement of valence band structure in boron-zinc-oxide films by making use of ion beams
DOI:10.1063/1.3672052 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Uhm, Han S.;Kwon, Gi C.;Choi, Eun H.;
10:166:11 Measurement of the valence band structure in dielectric films by a focused ion beam
DOI:10.1063/1.3554433 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Uhm, Han S.;Hong, Young J.;Choi, Eun H.;Kim, Do Y.;
10:166:12 Valence band structure in boron-zinc oxide films characterized by secondary electron emission
DOI:10.1063/1.3689848 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Uhm, Han S.;Choi, Joon H.;Yoo, Ha J.;Kwon, Gi C.;Choi, Eun H.;
10:166:13 Study of back reflectors for thin film silicon solar cells
DOI:10.1016/j.tsf.2013.05.019 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Zhu, H.;Mai, Y.;Wan, M.;Gao, J.;Wang, Y.;He, T.;Feng, Y.;Yin, J.;Du, J.;Wang, J.;Sun, R.;Huang, Y.;
10:166:14 Improved carrier extraction of solar cell using transparent current spreading layer
DOI:10.1016/j.tsf.2014.04.027 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Lin, Chiung-Wei;Tsai, Yao-Ting;
10:166:15 Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition (vol 112, 043708, 2012)
DOI:10.1063/1.4754316 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Ponomarev, M. V.;Verheijen, M. A.;Keuning, W.;van de Sanden, M. C. M.;Creatore, M.;
10:166:16 Measurement of valence band structure in arbitrary dielectric films
DOI:10.1016/j.materresbull.2012.04.117 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:0 AU: Uhm, Han S.;Choi, Eun H.;
10:166:17 Maskless deposition of ZnO films
DOI:10.1016/j.solmat.2010.11.004 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:1 AU: Choppali, Uma;Kougianos, Elias;Mohanty, Saraju P.;Gorman, Brian P.;
10:167:1 A Cu2+ ion-F Center Complex View on the Photoluminescence Quenching and Correlating Ferrimagnetism in (Cu-2(+)/Cu-1(2+))(0.044)Zn0.956O Electrospun Nanobelts
DOI:10.1021/am5001135 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Li, Jian-Min;Zeng, Xian-Lin;Wei, Dan-Ping;Hu, Yun-Bing;Xu, Zhu-An;
10:167:2 Highly conducting zinc oxide thin films achieved without postgrowth annealing
DOI:10.1063/1.3525575 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Singh, Budhi;Khan, Zaheer Ahmed;Khan, Imran;Ghosha, Subhasis;
10:167:3 Robust room temperature ferromagnetism in Cu doped ZnO thin films
DOI:10.1063/1.3615714 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Khan, Zaheer Ahmed;Ghosh, Subhasis;
10:167:4 Multi-walled carbon nanotubes supported Cu-doped ZnO nanoparticles and their optical property
DOI:10.1007/s11051-012-0817-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:8 AU: Chen, C. S.;Xie, X. D.;Liu, T. G.;Lin, L. W.;Kuang, J. C.;Xie, X. L.;Lu, L. J.;Cao, S. Y.;
10:167:5 Zinc oxide and metal phthalocyanine based hybrid P-N junction diodes
DOI:10.1063/1.4821780 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Singh, Budhi;Ghosh, Subhasis;
10:167:6 Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films
DOI:10.1007/s11664-014-3256-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Singh, Budhi;Ghosh, Subhasis;
10:167:7 Mass production of graphene-like single-crystalline NbSe2 (004) nanosheets via intercalant-assisted thermal cleavage
DOI:10.1007/s00339-009-5505-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:17 AU: Li, Jian-Min;
10:167:8 Green luminescence and room temperature ferromagnetism in Cu doped ZnO
DOI:10.1063/1.4775359 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Khan, Zaheer Ahmed;Rai, Abhishek;Barman, Sudipta Roy;Ghosh, Subhasis;
10:167:9 Indium-doped ZnO nanowires: Optical properties and room-temperature ferromagnetism
DOI:10.1063/1.3464229 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Liu, K. W.;Sakurai, M.;Aono, M.;
10:167:10 Partial cationic inversion-induced magnetic hardening of densely packed 23-nm-sized nanocrystallite-interacting nickel ferrite electrospun nanowires
DOI:10.1063/1.4840320 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Li, Jian-Min;Zeng, Xian-Lin;Xu, Zhu-An;
10:167:11 Synthesis and characterization of single- and few-layer mica nanosheets by the microwave-assisted solvothermal approach
DOI:10.1088/0957-4484/24/14/145602 JN:NANOTECHNOLOGY PY:2013
TC:1 AU: Tran Van Khai;Na, Han Gil;Kwak, Dong Sub;Kwon, Yong Jung;Ham, Heon;Shim, Kwang Bo;Kim, Hyoun Woo;
10:167:12 An "edge to edge" jigsaw-puzzle two-dimensional vapor-phase transport growth of high-quality large-area wurtzite-type ZnO (0001) nanohexagons
DOI:10.1063/1.4761942 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Li, Jian-Min;Dai, Long-Gui;Wan, Xiao-Ping;Zeng, Xian-Lin;
10:167:13 Highly UV luminescent ZnO microtetrapod-on-nanowire hybrids
DOI:10.1088/0957-4484/21/17/175603 JN:NANOTECHNOLOGY PY:2010
TC:10 AU: Li, Jian-Min;
10:167:14 In situ loading of palladium nanoparticles on mica and their catalytic applications
DOI:10.1016/j.jcis.2010.09.027 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:8 AU: Tao, Ranting;Sun, Zhenyu;Xie, Yun;Zhang, Hongye;Huang, Changliang;Zhao, Yanfei;Liu, Zhimin;
10:167:15 Ultraviolet stimulated emission in periodically polarity-inverted ZnO structures at room temperature
DOI:10.1063/1.3503605 JN:APPLIED PHYSICS LETTERS PY:2010
TC:1 AU: Park, Jinsub;Goto, Takenari;Park, Sung Hyun;Ha, Jun-Seok;Yoon, Euijoon;Yao, Takafumi;
10:167:16 Oxygen vacancies adjacent to Cu2+ ions in TiO2 (rutile) crystals
DOI:10.1063/1.3552910 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Brant, A. T.;Yang, Shan;Giles, N. C.;Iqbal, M. Zafar;Manivannan, A.;Halliburton, L. E.;
10:167:17 Multi-walled carbon nanotube-supported metal-doped ZnO nanoparticles and their photocatalytic property
DOI:10.1007/s11051-012-1295-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:10 AU: Chen, C. S.;Liu, T. G.;Lin, L. W.;Xie, X. D.;Chen, X. H.;Liu, Q. C.;Liang, B.;Yu, W. W.;Qiu, C. Y.;
10:168:1 Plasmonics effect of Ag nanoislands covered n-Al:ZnO/p-Si heterostructure
DOI:10.1016/j.apsusc.2014.09.059 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Venugopal, N.;Kaur, Gurpreet;Mitra, Anirban;
10:168:2 Electrical characterization and device characterization of ZnO microring shaped films by sol-gel method
DOI:10.1016/j.jallcom.2010.07.151 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:62 AU: Yakuphanoglu, Fahrettin;
10:168:3 Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique
DOI:10.1016/j.jallcom.2014.06.042 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Chand, Subhash;Kumar, Rajender;
10:168:4 Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol-gel spin technique
DOI:10.1016/j.jallcom.2012.09.131 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:14 AU: Keskenler, E. F.;Tomakin, M.;Dogan, S.;Turgut, G.;Aydin, S.;Duman, S.;Gurbulak, B.;
10:168:5 Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes
DOI:10.1016/j.jallcom.2013.12.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Tascioglu, Ilke;Farooq, W. A.;Turan, Rasit;Altindal, Semsettin;Yakuphanoglu, Fahrettin;
10:168:6 Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors
DOI:10.1063/1.3553191 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Singh, Samarendra P.;Ooi, Zi-En;Geok, Serene Ng Lay;Goh, Gregory K. L.;Dodabalapur, Ananth;
10:168:7 Synthesis and characterization of the special ZnO nanostructure by mechanochemical process
DOI:10.1016/j.matlet.2012.10.045 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Tadjarodi, A.;Izadi, M.;Imani, M.;
10:168:8 The synthesis and characterization of sol-gel spin coated CdO thin films: As a function of solution molarity
DOI:10.1016/j.matlet.2014.04.063 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Duman, S.;Turgut, G.;Ozcelik, F. S.;Gurbulak, B.;
10:168:9 Light-Harvesting in n-ZnO/p-Silicon Heterojunctions
DOI:10.1007/s11664-010-1363-5 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:9 AU: Li, L.;Shan, C. X.;Li, B. H.;Yao, B.;Shen, D. Z.;Chu, B.;Lu, Y. M.;
10:168:10 The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode
DOI:10.1016/j.mssp.2014.07.037 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Cakici, Tuba;Saglam, Mustafa;Guzeldir, Betul;
10:168:11 Organic-inorganic photosensor controlled by frequency based on nanostructure 1,4-diaminoanthraquinone and p-silicon
DOI:10.1016/j.synthmet.2010.11.045 JN:SYNTHETIC METALS PY:2011
TC:4 AU: Yakuphanoglu, Fahrettin;Farooq, W. Aslam;
10:168:12 A study on characterization of Al/ZnS/p-Si/Al heterojunction diode synthesized by sol-gel technique
DOI:10.1016/j.matlet.2013.03.125 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Turgut, Guven;Keskenler, E. Fahri;Aydin, Serdar;Dogan, Seydi;Duman, Songul;Sonmez, Erdal;Esen, Bayram;Duzgun, Bahattin;
10:168:13 Region-dependent behavior of I-V characteristics in n-ZnO:Al/p-Si contacts
DOI:10.1016/j.mssp.2011.02.021 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:4 AU: Shen, L.;Du, H. W.;Ding, H.;Tang, J.;Ma, Z. Q.;
10:168:14 Sensing characteristics of zinc oxide thin films deposited by spray pyrolysis onto tubular Pyrex substrate
DOI:10.1016/j.mssp.2013.04.019 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Madhi, I.;Saadoun, M.;Bessais, B.;
10:168:15 Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
DOI:10.1016/j.tsf.2013.04.146 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Mosca, M.;Macaluso, R.;Cali, C.;Butte, R.;Nicolay, S.;Feltin, E.;Martin, D.;Grandjean, N.;
10:169:1 Structural and optical property characterization of epitaxial ZnO:Te thin films grown by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2014.10.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Sahu, R.;Dileep, K.;Negi, D. S.;Nagaraja, K. K.;Shetty, S.;Datta, R.;
10:169:2 Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film
DOI:10.1016/j.jmmm.2013.06.042 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:12 AU: Loukya, B.;Negi, D. S.;Dileep, K.;Kumar, N.;Ghatak, Jay;Datta, R.;
10:169:3 Controlling structural quality of ZnO thin film on c-plane sapphire during pulsed laser deposition
DOI:10.1016/j.jcrysgro.2011.06.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Loukya, B.;Sowjanya, P.;Dileep, K.;Shipra, R.;Kanuri, S.;Panchakarla, L. S.;Datta, R.;
10:169:4 Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film
DOI:10.1063/1.4864362 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Sahu, R.;Dileep, K.;Loukya, B.;Datta, R.;
10:169:5 Phase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-doping
DOI:10.1016/j.jallcom.2013.10.082 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:10 AU: Dileep, K.;Datta, R.;
10:169:6 Crystallographic phase separation and band gap of ZnO1-xSx (x=0.1-0.3) alloy thin films grown by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2014.05.017 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Dileep, K.;Sahu, R.;Nagaraja, K. K.;Datta, R.;
10:169:7 Robust room temperature ferromagnetism in epitaxial CoO thin film
DOI:10.1063/1.4847775 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Negi, D. S.;Loukya, B.;Dileep, K.;Sahu, R.;Nagaraja, K. K.;Kumar, N.;Datta, R.;
10:169:8 Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target
DOI:10.1016/j.jcrysgro.2014.02.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Negi, D. S.;Roy, A.;Loukya, B.;Dileep, K.;Shetty, S.;Kumar, N.;Kumar, P. S. Anil;Datta, R.;
10:169:9 Structural and magnetic characterization of mixed valence Co(II, III)(x)Zn1-xO epitaxial thin films
DOI:10.1016/j.jmmm.2013.10.059 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:2 AU: Negi, D. S.;Loukya, B.;Dileep, K.;Sahu, R.;Shetty, S.;Kumar, N.;Ghatak, J.;Pachauri, N.;Gupta, A.;Datta, R.;
10:169:10 Electron energy loss spectroscopy of ZnO nanocrystals with different oxygen vacancy concentrations
DOI:10.1063/1.3555604 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Dileep, K.;Panchakarla, L. S.;Balasubramanian, K.;Waghmare, U. V.;Datta, R.;
10:169:11 Magnetic characteristics of phase-separated CeO2:Co thin films
DOI:10.1063/1.4820145 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Prestgard, M. C.;Siegel, G.;Ma, Q.;Tiwari, A.;
10:169:12 Mean-field simulation of metal oxide antiferromagnetic films and multilayers
DOI:10.1103/PhysRevB.87.184433 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Charilaou, M.;Hellman, F.;
10:169:13 Dynamic superparamagnetism in cobalt doped Sm2O3 thin films
DOI:10.1063/1.3610790 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Gray, Nathan W.;Tiwari, Ashutosh;
10:169:14 Electron-Mediated Ferromagnetic Behavior in CoO/ZnO Multilayers
DOI:10.1103/PhysRevLett.110.087206 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:4 AU: Lee, H. -J.;Bordel, C.;Karel, J.;Cooke, David W.;Charilaou, M.;Hellman, F.;
10:169:15 Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection
DOI:10.1063/1.4869117 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Prestgard, Megan C.;Tiwari, Ashutosh;
10:169:16 Magnetization switching and inverted hysteresis in perpendicular antiferromagnetic superlattices
DOI:10.1063/1.4880821 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Charilaou, M.;Bordel, C.;Hellman, F.;
10:170:1 Synthesis and optical properties of Ce-doped ZnO hexagonal nanoplatelets
DOI:10.1016/j.jcrysgro.2010.07.040 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:40 AU: Mahmoud, Waleed E.;
10:170:2 Synthesis, characterization and photoluminescence properties of Sn doped ZnO nanonails
DOI:10.1016/j.jcrysgro.2011.05.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:27 AU: Mahmoud, Waleed E.;Al-Harbi, T.;
10:170:3 Single crystalline quasi aligned one dimensional P-type Cu2O nanowire for improving Schottky barrier characteristics
DOI:10.1016/j.matlet.2011.03.093 JN:MATERIALS LETTERS PY:2011
TC:21 AU: Hafez, M.;Al-Marzouki, F.;Mahmoud, Waleed E.;
10:170:4 Synthesis and characterization of self-assembly silver sulfide nanorods prepared by squalene assisted microwave technique
DOI:10.1016/j.matlet.2013.07.010 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Yaghmour, S. J.;Mahmoud, Waleed E.;
10:170:5 Synthesis, characterization and optical properties of NiO:Cs thin film
DOI:10.1016/j.matlet.2013.03.032 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Al-Agel, F. A.;
10:170:6 Schottky barrier effect of ZnO modified methyl glycol thin films for detection of hydrogen sulfide gas
DOI:10.1016/j.ceramint.2012.11.100 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Al-Ghamdi, S. A.;Al-Heniti, S. H.;Mahmoud, Waleed E.;
10:170:7 Low temperature growth of metastable cubic CdSe nanocrystals and their photoluminescence properties
DOI:10.1016/j.jcrysgro.2011.07.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:14 AU: Al-Amri, Amal M.;Yaghmour, S. J.;Mahmoud, Waleed E.;
10:170:8 Synthesis and characterization of AIS chalcopyrite thin films for solar cell applications
DOI:10.1016/j.matlet.2012.05.065 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Al-Agel, F. A.;Mahmoud, Waleed E.;
10:170:9 The influence of sintering temperature on the engineered nanoporous titania ceramics
DOI:10.1016/j.matlet.2013.01.039 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Mahmoud, Waleed E.;Al-Agel, F. A.;Al-Arfaj, E. A.;
10:170:10 Development of highly conductive and transparent copper doped zinc oxide thin films via 2-methoxyethanol modified sol-gel dip-coating technique
DOI:10.1016/j.ceramint.2013.07.100 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Al-Khanbashi, Hibah A.;Shirbeeny, W.;Al-Ghamdi, A. A.;Bronstein, Lyudmila M.;Mahmoud, Waleed E.;
10:170:11 Synthesis and characterization of thin shell hollow sphere NiO nanopowder via ultrasonic technique
DOI:10.1016/j.matlet.2012.07.036 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Al-Hazmi, F.;Al-Harbi, T.;Mahmoud, Waleed E.;
10:170:12 Low temperature synthesis of CdSe capped 2-mercaptoethanol quantum dots
DOI:10.1016/j.optmat.2012.01.001 JN:OPTICAL MATERIALS PY:2012
TC:15 AU: Mahmoud, Waleed E.;Al-Amri, Amal M.;Yaghmour, S. J.;
10:170:13 Synthesis, characterization and luminescence properties of thiol-capped CdSe quantum dots at different processing conditions
DOI:10.1016/j.optmat.2012.10.018 JN:OPTICAL MATERIALS PY:2013
TC:7 AU: Mahmoud, Waleed E.;Yaghmour, S. J.;
10:170:14 Microwave assisted hydrothermal synthesis of engineered cerium oxide nanopowders
DOI:10.1016/j.jeurceramsoc.2012.05.003 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:14 AU: Mahmoud, Waleed E.;Faidah, A.;
10:170:15 The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
DOI:10.1016/j.apsusc.2013.08.068 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Tatar, B.;Gokdemir, F. P.;Pehlivan, E.;Urgen, M.;
10:170:16 Synthesis of 1-D cuprous oxide by using CTAB as a soft template in an acidic system
DOI:10.1016/j.matlet.2011.10.069 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Duan, Xiuju;Zhang, Yadong;Gao, Rongjie;Jian, Ze;Zhao, Yanhui;Liu, Wei;Gao, Yun;
10:170:17 Hydrothermal synthesis of ultra fine beta-Co(OH)(2) nanowires with novel morphologies using supercritical water
DOI:10.1016/j.matlet.2010.12.061 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Mahmoud, Waleed E.;Al-Harbi, T.;
10:170:18 Recycling paths for thin-film chalcogenide photovoltaic waste - Current feasible processes
DOI:10.1016/j.renene.2012.12.038 JN:RENEWABLE ENERGY PY:2013
TC:12 AU: Marwede, Max;Berger, Wolfgang;Schlummer, Martin;Maeurer, Andreas;Reller, Armin;
10:171:1 Effect of oxygen deficiency on room temperature ferromagnetism in Co doped ZnO
DOI:10.1063/1.4717741 JN:APPLIED PHYSICS LETTERS PY:2012
TC:20 AU: Gu, Hao;Zhang, Wen;Xu, Yongbing;Yan, Mi;
10:171:2 Evidence of the defect-induced ferromagnetism in Na and Co codoped ZnO
DOI:10.1063/1.3533666 JN:APPLIED PHYSICS LETTERS PY:2011
TC:29 AU: Gu, Hao;Jiang, Yinzhu;Xu, Yongbing;Yan, Mi;
10:171:3 A comparative study on the ferromagnetic properties of undoped and Mn-doped ZnO
DOI:10.1016/j.jallcom.2012.07.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:17 AU: Wang, X. L.;Lai, K. H.;Ruotolo, A.;
10:171:4 Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films
DOI:10.1063/1.4795797 JN:APPLIED PHYSICS LETTERS PY:2013
TC:19 AU: Wang, X. L.;Luan, C. Y.;Shao, Q.;Pruna, A.;Leung, C. W.;Lortz, R.;Zapien, J. A.;Ruotolo, A.;
10:171:5 Role of oxygen defects in magnetic property of Cu doped ZnO
DOI:10.1016/j.jallcom.2014.07.033 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Liu, Weijing;Tang, Xiaodong;Tang, Zheng;Chu, Fenghong;Zeng, Tao;Tang, Naiyun;
10:171:6 Ferromagnetism in ZnO co-doped with Mn and N studied by soft x-ray magnetic circular dichroism
DOI:10.1063/1.3643044 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Kataoka, T.;Yamazaki, Y.;Singh, V. R.;Sakamoto, Y.;Fujimori, A.;Takeda, Y.;Ohkochi, T.;Fujimori, S. -I.;Okane, T.;Saitoh, Y.;Yamagami, H.;Tanaka, A.;Kapilashrami, M.;Belova, L.;Rao, K. V.;
10:171:7 Non-volatile, electric control of magnetism in Mn-substituted ZnO
DOI:10.1063/1.4865428 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Wang, X. L.;Shao, Q.;Leung, C. W.;Lortz, R.;Ruotolo, A.;
10:171:8 Electric field-induced magnetic switching in Mn:ZnO film
DOI:10.1063/1.4883259 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Ren, S. X.;Sun, G. W.;Zhao, J.;Dong, J. Y.;Wei, Y.;Ma, Z. C.;Zhao, X.;Chen, W.;
10:171:9 Effect of oxygen defects on ferromagnetism of Mn doped ZnO
DOI:10.1063/1.4823774 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Liu, Weijing;Tang, Xiaodong;Tang, Zheng;
10:171:10 Room temperature magnetoresistance of horizontally aligned Mn-doped ZnO nanowires on terrace edges
DOI:10.1016/j.matlet.2014.06.180 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Kim, Woo-Hee;Son, Jong Yeog;
10:171:11 Characterization of Co distribution in ZnO by x-ray magnetic circular dichroism
DOI:10.1063/1.4807915 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Zhang, Y.;Wang, Z.;Cao, J. X.;
10:171:12 Diluted magnetism in Mn-doped SrZnO2 single crystals
DOI:10.1063/1.4821958 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Rahman, M. R.;Koteswararao, B.;Huang, S. H.;Kim, Kee Hoon;Chou, F. C.;
10:171:13 Growth and characterization of nonpolar, heavily Mn-substituted ZnO films
DOI:10.1063/1.4862846 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Shao, Q.;Ku, P. S.;Wang, X. L.;Cheng, W. F.;Leung, C. W.;Ruotolo, A.;
10:171:14 Chemical states and ferromagnetism in heavily Mn-substituted zinc oxide thin films
DOI:10.1063/1.4871759 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Shao, Q.;Ku, P. S.;Wang, X. L.;Zapien, J. A.;Leung, C. W.;Borgatti, F.;Gambardella, A.;Dediu, V.;Ciprian, R.;Ruotolo, A.;
10:171:15 Transition-metal acceptor complexes in zinc oxide
DOI:10.1103/PhysRevB.87.085204 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Gluba, M. A.;Nickel, N. H.;
10:171:16 Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films
DOI:10.1063/1.4793639 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Wang, X. L.;Shao, Q.;Leung, C. W.;Ruotolo, A.;
10:172:1 Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays
DOI:10.1063/1.3367706 JN:APPLIED PHYSICS LETTERS PY:2010
TC:58 AU: Wang, K.;Chen, J. J.;Zeng, Z. M.;Tarr, J.;Zhou, W. L.;Zhang, Y.;Yan, Y. F.;Jiang, C. S.;Pern, J.;Mascarenhas, A.;
10:172:2 Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes
DOI:10.1063/1.3543845 JN:APPLIED PHYSICS LETTERS PY:2011
TC:34 AU: Um, Han-Don;Moiz, Syed Abdul;Park, Kwang-Tae;Jung, Jin-Young;Jee, Sang-Won;Ahn, Cheol Hyoun;Kim, Dong Chan;Cho, Hyung Koun;Kim, Dong-Wook;Lee, Jung-Ho;
10:172:3 Improved Open-Circuit Voltage in Polymer/Oxide-Nanoarray Hybrid Solar Cells by Formation of Homogeneous Metal Oxide Core/Shell Structures
DOI:10.1021/am400281s JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:16 AU: Wu, Fan;Cui, Qi;Qiu, Zeliang;Liu, Changwen;Zhang, Hui;Shen, Wei;Wang, Mingtai;
10:172:4 Colorimetric Disposable Paper Coated with ZnO@ZnS Core-Shell Nanoparticles for Detection of Copper Ions in Aqueous Solutions
DOI:10.1021/am505480y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Sadollahkhani, Azar;Hatamie, Amir;Nur, Omer;Willander, Magnus;Zargar, Behrooz;Kazeminezhad, Iraj;
10:172:5 Solution-growth and optoelectronic properties of ZnO:Cl@ZnS core-shell nanowires with tunable shell thickness
DOI:10.1016/j.jallcom.2012.11.166 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:18 AU: Fan, Jiandong;Fabrega, Cristian;Zamani, Reza;Shavel, Alexey;Gueell, Frank;Carrete, Alex;Andreu, Teresa;Lopez, Antonio M.;Ramon Morante, Joan;Arbiol, Jordi;Cabot, Andreu;
10:172:6 n-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition
DOI:10.1063/1.3679078 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Kang, Hyemin;Park, Jusang;Choi, Taejin;Jung, Hanearl;Lee, Kwang H.;Im, Seongil;Kim, Hyungjun;
10:172:7 CuO/ZnO core/shell nanowire arrays and their photovoltaics application
DOI:10.1016/j.matlet.2014.06.124 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Zhao, Xinhong;Wang, Peng;Gao, Yongfeng;Xu, Xiaofang;Yan, Zaoxue;Ren, Naifei;
10:172:8 High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface
DOI:10.1016/j.mssp.2014.07.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Ko, Kyung Yong;Kang, Hyemin;Kim, Jungkil;Lee, Woo;Lee, Hee Sung;Im, Seongil;Kang, Ji Yeon;Myoung, Jae-Min;Kim, Han-Gil;Kim, Soo-Hyun;Kim, Hyungjun;
10:172:9 Enhanced UV emission in ZnO/ZnS core shell nanoparticles prepared by epitaxial growth in solution
DOI:10.1007/s13391-012-2222-8 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:10 AU: Sharma, Simmi;Chawla, Santa;
10:172:10 Control of the shell structure of ZnO-ZnS core-shell structure
DOI:10.1007/s11051-011-0377-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:8 AU: Woo Hyun Nam;Lim, Young Soo;Seo, Won-Seon;Cho, Hyung Koun;Lee, Jeong Yong;
10:172:11 Enhanced photon-generated carrier extraction from Si nanostructure under additional infrared light irradiation
DOI:10.1063/1.4807281 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Yu, Wei;Xu, Yanmei;Li, Huimin;Wang, Jin;Fu, Guangsheng;Lu, Wanbing;
10:172:12 Tailoring magnetic and photoluminescence properties in ZnS/ZnO core/shell nanostructures through Cr doping
DOI:10.1016/j.apsusc.2013.06.144 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Chawla, Santa;Sharma, Simmi;Kotnala, R. K.;
10:172:13 Synthesis and Characterization of Zn2SiO4:Mn2+ Nanocrystals and Tuning of Phase by Controlling of Silica Shell Thickness
DOI:10.1007/s13391-014-4104-8 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Yu, Ri;Pee, Jae-Hwan;Kim, Hyeong-Jun;Kim, YooJin;
10:173:1 Electrodeposition of Hierarchical ZnO Nanorod-Nanosheet Structures and Their Applications in Dye-Sensitized Solar Cells
DOI:10.1021/am2002789 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:73 AU: Qiu, Jianhang;Guo, Min;Wang, Xidong;
10:173:2 Effect of annealing temperature on surface morphology and work function of ZnO nanorod arrays
DOI:10.1016/j.jallcom.2013.02.172 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:10 AU: Wu, Hainan;Xue, Mingshan;Ou, Junfei;Wang, Fajun;Li, Wen;
10:173:3 On the correlation between surface morphology and electron work function of indium tin oxide
DOI:10.1063/1.4730388 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Xue, Mingshan;Wu, Hainan;Ou, Junfei;Wang, Fajun;Li, Xibao;Li, Wen;Jiang, Zhonghao;
10:173:4 Lightning rod effect in surface work function of semiconductor nanomaterials
DOI:10.1063/1.4812238 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Xue, Mingshan;Wang, Wenfeng;Ou, Junfei;Wang, Fajun;Li, Wen;
10:173:5 Self-assembly growth and electron work function of copper phthalocyanine films on indium tin oxide glass
DOI:10.1016/j.apsusc.2011.10.143 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: xue, Mingshan;Jiang, Zhonghao;Li, Wen;Bi, Guangli;Ou, Junfei;Wang, Fajun;Li, Changquan;
10:173:6 Morphological control of copper phthalocyanine films by protonation-electrophoretic deposition
DOI:10.1016/j.apsusc.2010.10.033 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Zhu, Yuanyuan;Qian, Lingfeng;Xue, Minzhao;Sheng, Qiaorong;Zhang, Qing;Liu, Yangang;
10:173:7 The topography of magnetron sputter-deposited Mg-Ti alloy thin films
DOI:10.1016/j.matchemphys.2010.10.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:15 AU: Song, Guang-Ling;Haddad, Daad;
10:173:8 Understanding of the correlation between work function and surface morphology of metals and alloys
DOI:10.1016/j.jallcom.2013.04.113 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Xue, Mingshan;Wang, Wenfeng;Wang, Fajun;Ou, Junfei;Li, Changquan;Li, Wen;
10:173:9 Electrophoretic Deposition of Phthalocyanine in Organic Solutions Containing Trifluoroacetic Acid
DOI:10.1021/la102172t JN:LANGMUIR PY:2010
TC:10 AU: Shrestha, Nabeen K.;Kohn, Hideki;Imamura, Mitsuharu;Irie, Kazunobu;Ogihara, Hitoshi;Saji, Tetsuo;
10:173:10 Characterization of interfacial strength of dissimilar metallic joints using a scanning Kelvin probe
DOI:10.1016/j.scriptamat.2011.11.006 JN:SCRIPTA MATERIALIA PY:2012
TC:2 AU: Xue, Mingshan;Xie, Juan;Li, Wen;Ou, Junfei;Wang, Fajun;Zhong, Zhenchen;
10:173:11 A disposable electrochemiluminescence device for ultrasensitive monitoring of K562 leukemia cells based on aptamers and ZnO@carbon quantum dots
DOI:10.1016/j.bios.2013.05.003 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:22 AU: Zhang, Meng;Liu, Heng;Chen, Long;Yan, Mei;Ge, Lei;Ge, Shenguang;Yu, Jinghua;
10:173:12 Photoconductivity of thin organic films
DOI:10.1016/j.apsusc.2010.01.047 JN:APPLIED SURFACE SCIENCE PY:2010
TC:9 AU: Tkachenko, Nikolai V.;Chukharev, Vladimir;Kaplas, Petra;Tolkki, Antti;Efimov, Alexander;Haring, Kimmo;Viheriala, Jukka;Niemi, Tapio;Lemmetyinen, Helge;
10:173:13 Effects of vacuum heat treatment on the photoelectric work function and surface morphology of multilayered silver-metal electrical contacts
DOI:10.1016/j.apsusc.2014.02.110 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Akbi, Mohamed;Bouchou, Aissa;Zouache, Noureddine;
10:173:14 Binuclear transition metal phthalocyanines with superior performance as electrocatalysts for lithium/thionyl chloride battery
DOI:10.1557/jmr.2014.48 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:1 AU: Zhang, Ronglan;Xu, Bei;Wang, Jifeng;Zhao, Jianshe;
10:173:15 Growth of Copper Phthalocyanine Rods on Au Plasmon Electrodes through Micelle Disruption Methods
DOI:10.1021/la903455a JN:LANGMUIR PY:2010
TC:5 AU: Chen, Wei-Hung;Ko, Wen-Yin;Chen, Ying-Shiou;Cheng, Ching-Yuan;Chan, Chi-Ming;Lin, Kuan-Jiuh;
10:173:16 Ultrasound-assisted synthesis of six-fold-symmetrical ZnO hierarchical architecture assembled by nanorods arrays
DOI:10.1016/j.matlet.2014.08.120 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Du, Guofang;Liu, Yongju;Li, Yuehuan;Zhao, Kan;Zhao, Heyun;
10:174:1 SnO2: A comprehensive review on structures and gas sensors
DOI:10.1016/j.pmatsci.2014.06.003 JN:PROGRESS IN MATERIALS SCIENCE PY:2014
TC:26 AU: Das, Soumen;Jayaraman, V.;
10:174:2 SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
DOI:10.1088/0957-4484/21/24/245605 JN:NANOTECHNOLOGY PY:2010
TC:52 AU: Kim, Won-Sik;Lee, Byoung-Sun;Kim, Dai-Hong;Kim, Hong-Chan;Yu, Woong-Ryeol;Hong, Seong-Hyeon;
10:174:3 Structural and optical properties of SnO2 nanotowers and interconnected nanowires prepared by carbothermal reduction method
DOI:10.1016/j.jallcom.2013.12.268 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Bhardwaj, Neha;Kuriakose, Sini;Mohapatra, S.;
10:174:4 Reactive-Template Fabrication of Porous SnO2 Nanotubes and Their Remarkable Gas-Sensing Performance
DOI:10.1021/am4019884 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:28 AU: Zhang, Jun;Guo, Jing;Xu, Hongyan;Cao, Bingqiang;
10:174:5 Structural evolution of SnO2 nanostructure from core-shell faceted pyramids to nanorods and its gas-sensing properties
DOI:10.1016/j.jcrysgro.2010.10.151 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Das, Soumen;Kim, Dae-Young;Choi, Cheol-Min;Hahn, Y. B.;
10:174:6 Influence of aqueous hexamethylenetetramine on the morphology of self-assembled SnO2 nanocrystals
DOI:10.1016/j.materresbull.2010.12.034 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:8 AU: Das, Soumen;Kim, Dae-Young;Choi, Cheol-Min;Hahn, Yoon-Bong;
10:174:7 Synthesis of single-crystal SnO2 nanowires for NOx gas sensors application
DOI:10.1016/j.ceramint.2012.05.039 JN:CERAMICS INTERNATIONAL PY:2012
TC:12 AU: Do Dang Trung;Nguyen Van Toan;Pham Van Tong;Nguyen Van Duy;Nguyen Duc Hoa;Nguyen Van Hieu;
10:174:8 Electrochemically controlled synthesis and characterization of SnO2 nanostructures on FTO glass substrate
DOI:10.1016/j.matlet.2012.04.064 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Kim, Myung Sub;Lee, Hee Kwan;Yu, Jae Su;
10:174:9 Synthesis of High-Purity SnO2 Nanobelts by Using Exothermic Reaction
DOI:10.1155/2011/526094 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:3 AU: Zhang, Guodong;Liu, Nian;Ren, Zhengyuan;Yang, Bing;
10:174:10 Structure of SnO2 nanoparticles by sol-gel method
DOI:10.1016/j.matlet.2012.01.073 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Aziz, Madzlan;Abbas, Saad Saber;Baharom, Wan Rosemaria Wan;Mahmud, Wan Zuraidah Wan;
10:175:1 Fabrication of Nanofluidic Biochips with Nanochannels for Applications in DNA Analysis
DOI:10.1002/smll.201200240 JN:SMALL PY:2012
TC:28 AU: Xia, Deying;Yan, Juchao;Hou, Shifeng;
10:175:2 Challenges in the use of 1D nanostructures for on-chip biosensing and diagnostics: A review
DOI:10.1016/j.bios.2010.07.041 JN:BIOSENSORS & BIOELECTRONICS PY:2010
TC:35 AU: Balasubramanian, Kannan;
10:175:3 Biosensors based on one-dimensional nanostructures
DOI:10.1039/c1jm10521c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:33 AU: Feigel, Ian Matthew;Vedala, Harindra;Star, Alexander;
10:175:4 Field-effect-based chemical sensing using nanowire-nanoparticle hybrids: The ion-sensitive metal-semiconductor field-effect transistor
DOI:10.1063/1.4775579 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Pachauri, Vivek;Kern, Klaus;Balasubramanian, Kannan;
10:175:5 Site-Specific Self-Assembled Liquid-Gated ZnO Nanowire Transistors for Sensing Applications
DOI:10.1002/smll.200900876 JN:SMALL PY:2010
TC:20 AU: Pachauri, Vivek;Vlandas, Alexis;Kern, Klaus;Balasubramanian, Kannan;
10:175:6 Citrate-assisted one-pot assembly of palladium nanoparticles onto ZnO nanorods for CO sensing application
DOI:10.1016/j.matchemphys.2013.07.050 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Rai, Prabhakar;Yu, Yeon-Tae;
10:175:7 Peptide Nucleic Acid (PNA)-DNA Duplexes: Comparison of Hybridization Affinity between Vertically and Horizontally Tethered PNA Probes
DOI:10.1021/am4011429 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: De, Arpita;Souchelnytskyi, Serhiy;van den Berg, Albert;Carlen, Edwin T.;
10:175:8 Tuning the functional interface of carbon nanotubes by electrochemistry: Toward nanoscale chemical sensors and biosensors
DOI:10.1557/jmr.2011.410 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:14 AU: Balasubramanian, Kannan;Kurkina, Tetiana;Ahmad, Ashraf;Burghard, Marko;Kern, Klaus;
10:175:9 High performance field-effect transistors fabricated with laterally grown ZnO nanorods in solution
DOI:10.1088/0957-4484/22/18/185310 JN:NANOTECHNOLOGY PY:2011
TC:26 AU: Park, Yong Kyu;Choi, Han Seok;Kim, Jin-Hwan;Kim, Jeong-Hyun;Hahn, Yoon-Bong;
10:175:10 Detection of a Single Nucleotide Polymorphism Using Single-Walled Carbon-Nanotube Near-Infrared Fluorescence
DOI:10.1002/smll.200900944 JN:SMALL PY:2010
TC:19 AU: Jeng, Esther S.;Nelson, John D.;Prather, Kristala L. J.;Strano, Michael S.;
10:175:11 Immobilization Mechanisms of Deoxyribonucleic Acid (DNA) to Hafnium Dioxide (HfO2) Surfaces for Biosensing Applications
DOI:10.1021/am3013032 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:7 AU: Fahrenkopf, Nicholas M.;Rice, P. Zachary;Bergkvist, Magnus;Deskins, N. Aaron;Cady, Nathaniel C.;
10:175:12 Cinnamate-based DNA photolithography
DOI:10.1038/NMAT3645 JN:NATURE MATERIALS PY:2013
TC:9 AU: Feng, Lang;Romulus, Joy;Li, Minfeng;Sha, Ruojie;Royer, John;Wu, Kun-Ta;Xu, Qin;Seeman, Nadrian C.;Weck, Marcus;Chaikin, Paul;
10:175:13 Fabrication of fluidic devices with 30 nm nanochannels by direct imprinting
DOI:10.1116/1.3662886 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:7 AU: Fernandez-Cuesta, Irene;Palmarelli, Anna Laura;Liang, Xiaogan;Zhang, Jingyu;Dhuey, Scott;Olynick, Deirdre;Cabrini, Stefano;
10:175:14 Photoelectrocatalytic Oxidation of Glutathione Based on Porous TiO2-Pt Nanowhiskers
DOI:10.1021/la302355b JN:LANGMUIR PY:2012
TC:15 AU: Chen, Guihua;Wang, Jianling;Wu, Changyu;Li, Chen-zhong;Jiang, Hui;Wang, Xuemei;
10:175:15 Vertical alignment of liquid crystals with zinc oxide nanorods
DOI:10.1088/0957-4484/24/34/345702 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Lim, Young Jin;Choi, Young Eun;Kang, Shin-Woong;Kim, Dae Young;Lee, Seung Hee;Hahn, Yoon-Bong;
10:175:16 Rapid Prototyping of Nanofluidic Systems Using Size-Reduced Electrospun Nanofibers for Biomolecular Analysis
DOI:10.1002/smll.201000884 JN:SMALL PY:2010
TC:10 AU: Park, Seung-min;Huh, Yun Suk;Szeto, Kylan;Joe, Daniel J.;Kameoka, Jun;Coates, Geoffrey W.;Edel, Joshua B.;Erickson, David;Craighead, Harold G.;
10:175:17 Peptide Nucleic Acid (PNA)-DNA Duplexes: Comparison of Hybridization Affinity between Vertically and Horizontally Tethered PNA Probes (vol 5, pg 4607, 2013)
DOI:10.1021/am402515h JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:0 AU: De, Arpita;Souchelnytskyi, Serhiy;van den Berg, Albert;Carlen, Edwin T.;
10:175:18 Study of multilayer systems in electron beam lithography
DOI:10.1116/1.4827813 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Peters, Robert;Fito, Taras;Gutierrez-Rivera, Luis;Dew, Steven;Stepanova, Maria;
10:176:1 Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper-Doped ZnO
DOI:10.1002/adma.201004519 JN:ADVANCED MATERIALS PY:2011
TC:34 AU: Herng, Tun Seng;Wong, Meng Fei;Qi, Dongchen;Yi, Jiabao;Kumar, Amit;Huang, Alicia;Kartawidjaja, Fransiska Cecilia;Smadici, Serban;Abbamonte, Peter;Sanchez-Hanke, Cecilia;Shannigrahi, Santiranjan;Xue, Jun Min;Wang, John;Feng, Yuan Ping;Rusydi, Andrivo;Zeng, Kaiyang;Ding, Jun;
10:176:2 Correlation between saturation magnetization and surface morphological features in Zn1-xCrxO thin films
DOI:10.1063/1.3549696 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Hu, Y. M.;Li, S. S.;Chia, C. H.;
10:176:3 The dual effects of Al-doping on the ferromagnetism of Zn0.98-yEr0.02AlyO thin films
DOI:10.1063/1.4819455 JN:AIP ADVANCES PY:2013
TC:2 AU: Chen, Hong-Ming;Liu, Xue-Chao;Zhuo, Shi-Yi;Xiong, Ze;Zhou, Ren-Wei;Yang, Jian-Hua;Shi, Er-Wei;
10:176:4 Oxygen enhanced ferromagnetism in Cr-doped ZnO films
DOI:10.1063/1.3624589 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Xiong, Ze;Liu, Xue-Chao;Zhuo, Shi-Yi;Yang, Jian-Hua;Shi, Er-Wei;Yan, Wen-Sheng;
10:176:5 Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film
DOI:10.1063/1.4871937 JN:AIP ADVANCES PY:2014
TC:2 AU: Chen, Hong-Ming;Liu, Xue-Chao;Zhuo, Shi-Yi;Xiong, Ze;Zhou, Ren-Wei;Li, Fei;Shi, Er-Wei;
10:176:6 Influence of Ga doping on the Cr valence state and ferromagnetism in Cr: ZnO films
DOI:10.1063/1.4776689 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Xiong, Ze;Liu, Xue-Chao;Zhuo, Shi-Yi;Yang, Jian-Hua;Shi, Er-Wei;Yan, Wen-Sheng;Yao, Shu-De;Pan, Hui-Ping;
10:176:7 Optical and ferromagnetic properties of Cr doped ZnO nanorods
DOI:10.1016/j.apsusc.2014.07.006 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Lin, Bao-Zhu;Zhou, Lin;Yuldashev, Sh. U.;Fu, De-Jun;Kang, Tae-Won;
10:176:8 Nature of room-temperature ferromagnetism from undoped ZnO nanoparticles
DOI:10.1007/s00339-010-5703-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:24 AU: Zhang, Yongzhe;Xie, Erqing;
10:176:9 Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector
DOI:10.1063/1.4737648 JN:APPLIED PHYSICS LETTERS PY:2012
TC:13 AU: Reyes, Pavel Ivanoff;Ku, Chieh-Jen;Duan, Ziqing;Xu, Yi;Garfunkel, Eric;Lu, Yicheng;
10:176:10 Interplay of Cu and oxygen vacancy in optical transitions and screening of excitons in ZnO:Cu films
DOI:10.1063/1.4866029 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Darma, Yudi;Herng, Tun Seng;Marlina, Resti;Fauziah, Resti;Ding, Jun;Rusydi, Andrivo;
10:176:11 Large enhancement of ferromagnetism by Cr doping in Mn3O4 nanowires
DOI:10.1063/1.4874272 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Li, GaoMin;Tang, XiaoBing;Lou, ShiYun;Zhou, ShaoMin;
10:176:12 Optical and magnetic properties of Cr-doped ZnS nanocrystallites
DOI:10.1063/1.4729877 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Zeng, Xiaoling;Zhang, Jiye;Huang, Feng;
10:176:13 Effect of growth temperature on characteristics of Cr-doped ZnO nanorods by magnetron sputtering
DOI:10.1007/s00339-012-7030-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Jin, C. G.;Yu, T.;Wu, Z. F.;Chen, X. M.;Wu, X. M.;Zhuge, L. J.;
10:176:14 The controllable synthesis, structural, and ferromagnetic properties of Co doped GaN nanowires
DOI:10.1063/1.4724328 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Li, Yanan;Chen, Zhuo;Cao, Chuanbao;Usman, Zahid;Feng, Yajuan;Pan, Zhiyun;Wu, Ziyu;
10:176:15 Infra-red emission properties of ZnO:Er thin films prepared on the sapphire substrates
DOI:10.1016/j.ceramint.2011.05.103 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Lee, Jun Seong;Kim, Young Jin;
10:176:16 Atomic layer deposition of Pt growth template for orienting PbZrxTi1-xO3 thin films
DOI:10.1116/1.3664766 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:0 AU: Potrepka, Daniel M.;Sanchez, Luz M.;Polcawich, Ronald G.;
10:176:17 Zinc vacancies and interstitials in ZnO nanorods
DOI:10.1016/j.tsf.2011.10.138 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Boukos, N.;Chandrinou, C.;Travlos, A.;
10:177:1 Is it really intrinsic ferromagnetism?
DOI:10.1038/nmat2905 JN:NATURE MATERIALS PY:2010
TC:21 AU: Pulizzi, Fabio;Chambers, Scott;
10:177:2 (La1-xBax)(Zn1-xMnx)AsO: A two-dimensional 1111-type diluted magnetic semiconductor in bulk form
DOI:10.1103/PhysRevB.88.041102 JN:PHYSICAL REVIEW B PY:2013
TC:14 AU: Ding, Cui;Man, Huiyuan;Qin, Chuan;Lu, Jicai;Sun, Yunlei;Wang, Quan;Yu, Biqiong;Feng, Chunmu;Goko, T.;Arguello, C. J.;Liu, L.;Frandsen, B. A.;Uemura, Y. J.;Wang, Hangdong;Luetkens, H.;Morenzoni, E.;Han, W.;Jin, C. Q.;Munsie, T.;Williams, T. J.;D'Ortenzio, R. M.;Medina, T.;Luke, G. M.;Imai, T.;Ning, F. L.;
10:177:3 Suppression of T-C by overdoped Li in the diluted ferromagnetic semiconductor Li1+y(Zn1-xMnx)P: A mu SR investigation
DOI:10.1103/PhysRevB.90.085123 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Ning, F. L.;Man, Huiyuan;Gong, Xin;Zhi, Guoxiang;Guo, Shengli;Ding, Cui;Wang, Quan;Goko, T.;Liu, L.;Frandsen, B. A.;Uemura, Y. J.;Luetkens, H.;Morenzoni, E.;Jin, C. Q.;Munsie, T.;Luke, G. M.;Wang, Hangdong;Chen, Bin;
10:177:4 Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping
DOI:10.1103/PhysRevB.88.081203 JN:PHYSICAL REVIEW B PY:2013
TC:12 AU: Deng, Z.;Zhao, K.;Gu, B.;Han, W.;Zhu, J. L.;Wang, X. C.;Li, X.;Liu, Q. Q.;Yu, R. C.;Goko, T.;Frandsen, B.;Liu, L.;Zhang, Jinsong;Wang, Yayu;Ning, F. L.;Maekawa, S.;Uemura, Y. J.;Jin, C. Q.;
10:177:5 Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with T-C around 200 K
DOI:10.1063/1.4813540 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Yang, Xiaojun;Li, Yuke;Shen, Chenyi;Si, Bingqi;Sun, Yunlei;Tao, Qian;Cao, Guanghan;Xu, Zhuan;Zhang, Fuchun;
10:177:6 Li-1.1(Zn1-xCrx)As: Cr doped I-II-V diluted magnetic semiconductors in bulk form
DOI:10.1063/1.4867299 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Wang, Quan;Man, Huiyuan;Ding, Cui;Gong, Xin;Guo, Shengli;Jin, Huike;Wang, Hangdong;Chen, Bin;Ning, F. L.;
10:177:7 Layered Hydride CaNiGeH with a ZrCuSiAs-type Structure: Crystal Structure, Chemical Bonding, and Magnetism Induced by Mn Doping
DOI:10.1021/ja3026104 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:9 AU: Liu, Xiaofeng;Matsuishi, Satoru;Fujitsu, Satoru;Ishigaki, Toru;Kamiyama, Takashi;Hosono, Hideo;
10:177:8 A model ferromagnetic semiconductor
DOI:10.1038/nmat2908 JN:NATURE MATERIALS PY:2010
TC:11 AU: Pulizzi, Fabio;Samarth, Nitin;
10:177:9 NMR investigation of the diluted magnetic semiconductor Li(Zn1-xMnx)P (x=0.1)
DOI:10.1103/PhysRevB.88.041108 JN:PHYSICAL REVIEW B PY:2013
TC:7 AU: Ding, Cui;Qin, Chuan;Man, Huiyuan;Imai, T.;Ning, F. L.;
10:177:10 K and Mn co-doped BaCd2As2: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance
DOI:10.1063/1.4842875 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Yang, Xiaojun;Li, Yuke;Zhang, Pan;Jiang, Hao;Luo, Yongkang;Chen, Qian;Feng, Chunmu;Cao, Chao;Dai, Jianhui;Tao, Qian;Cao, Guanghan;Xu, Zhu-An;
10:177:11 Absence of a ferromagnetic phase in pure Ge quantum dots and Ge/SiO2 multilayer films
DOI:10.1016/j.jmmm.2014.03.060 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:0 AU: Chi, Y. C.;Chao, J. H.;
10:177:12 (Sr, Na)( Zn, Mn)(2)As-2: A diluted ferromagnetic semiconductor with the hexagonal CaAl2Si2 type structure
DOI:10.1103/PhysRevB.90.155202 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Chen, B. J.;Zhao, K.;Deng, Z.;Han, W.;Zhu, J. L.;Wang, X. C.;Liu, Q. Q.;Frandsen, B.;Liu, L.;Cheung, S.;Ning, F. L.;Munsie, T. J. S.;Medina, T.;Luke, G. M.;Carl, J. P.;Munevar, J.;Uemura, Y. J.;Jin, C. Q.;
10:177:13 (Ca,Na)(Zn,Mn)(2)As-2: A new spin and charge doping decoupled diluted ferromagnetic semiconductor
DOI:10.1063/1.4899190 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhao, K.;Chen, B. J.;Deng, Z.;Han, W.;Zhao, G. Q.;Zhu, J. L.;Liu, Q. Q.;Wang, X. C.;Frandsen, B.;Liu, L.;Cheung, S.;Ning, F. L.;Munsie, T. J. S.;Medina, T.;Luke, G. M.;Carlo, J. P.;Munevar, J.;Zhang, G. M.;Uemura, Y. J.;Jin, C. Q.;
10:177:14 Spin-glass-like behavior of CaNi1-xMnxGe
DOI:10.1103/PhysRevB.84.214439 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Liu, Xiaofeng;Matsuishi, Satoru;Fujitsu, Satoru;Hosono, Hideo;
10:177:15 New Hydrides REScSiH and REScGeH (RE = La, Ce): Structure, Magnetism, and Chemical Bonding
DOI:10.1021/cm101290f JN:CHEMISTRY OF MATERIALS PY:2010
TC:6 AU: Chevalier, Bernard;Hermes, Wilfried;Heying, Birgit;Rodewald, Ute Ch.;Hammerschmidt, Adrienne;Matar, Samir F.;Gaudin, Etienne;Poettgen, Rainer;
10:177:16 Ferromagnetism in Ge/SiO2 multilayer films
DOI:10.1063/1.3294621 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Zhen, Congmian;Liu, Yuanbo;Ma, Li;Pang, Zhaoguang;Pan, Chengfu;Hou, Denglu;
10:177:17 Photoluminescence studies of giant Zeeman effect in MBE-grown cobalt-based dilute magnetic semiconductors
DOI:10.1016/j.jcrysgro.2014.01.077 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Papaj, M.;Kobak, J.;Rousset, J. G.;Janik, E.;Nawrocki, M.;Kossacki, P.;Golnik, A.;Pacuski, W.;
10:177:18 Magnetic and structural phase diagram of CaMn2Sb2
DOI:10.1103/PhysRevB.86.184430 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;Scaling coefficient for three-dimensional grain coalescence of ZnO on;Si(111);PHYSICAL REVIEW B;86;22;224108;10.1103/PhysRevB.86.224108;DEC 11 2012;2012;Grain-rotation-induced coalescence is a well-known growth mechanism of;granular/polycrystalline systems in two dimensions. In three-dimensional;(3D) crystals there are more degrees of freedom, and influences of the;substrate play an important role. In the present work we analyze the 3D;coalescence of ZnO grains on Si(111) by thermal annealing under O-2;atmosphere. Atomic force microscopy and electron backscatter diffraction;measurements reveal a significant increase in the mean grain diameter;and a reorientation that matches the substrate orientation. This;structural reorganization leads to a substantial enhancement of the;electronic layer quality. We describe the grain growth with a diffusive;model and find a volume scaling coefficient of 1.5. This proves that the;additional degrees of freedom significantly accelerate grain-rotation;induced coalescence in three dimensions. DOI: 10.1103/PhysRevB.86.224108;Meier, Cedrik/E-4877-2011;Meier, Cedrik/0000-0002-3787-3572;4;0;0;0;4;1098-0121;WOS:000312291300001;;;J;van den Berg, T. L.;Lombardo, P.;Kuzian, R. O.;Hayn, R.;Orbital polaron in double-exchange ferromagnets;PHYSICAL REVIEW B;86;23;235114;10.1103/PhysRevB.86.235114;DEC 11 2012;2012;We investigate the spectral properties of the two-orbital Hubbard model,;including the pair hopping term, by means of the dynamical mean field;method. This Hamiltonian describes materials in which ferromagnetism is;realized by the double-exchange mechanism, as for instance manganites,;nickelates, or diluted magnetic semiconductors. The spectral function of;the unoccupied states is characterized by a specific equidistant three;peak structure. We emphasize the importance of the double hopping term;on the spectral properties. We show the existence of a ferromagnetic;phase due to electron doping near n = 1 by the double-exchange;mechanism. A quasiparticle excitation at the Fermi energy is found that;we attribute to what we will call an orbital polaron. We derive an;effective spin-pseudospin Hamiltonian for the two-orbital;double-exchange model at n = 1 filling to explain the existence and;dynamics of this quasiparticle. DOI: 10.1103/PhysRevB.86.235114;Kuzian, Roman/C-9079-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Kuzian, Roman/0000-0002-6672-7224;;1;0;0;0;1;1098-0121;WOS:000312291700003;;;J;van Wezel, Jasper;Comment on "Charge-parity symmetry observed through Friedel oscillations;in chiral charge-density waves";PHYSICAL REVIEW B;86;24;247101;10.1103/PhysRevB.86.247101;DEC 11 2012;2012;In their publication [Phys. Rev. B 84, 245125 (2011)], Ishioka et al.;discuss the recently discovered chiral charge-density wave state in;1T-TiSe2 in terms of a parameter H-CDW, whose sign is suggested to;correspond to the handedness of the chiral order. Here, we point out;that H-CDW, as defined by Ishioka et al., cannot be used to characterize;chirality in that way. An alternative measure of chirality for the;specific case of 1T-TiSe2 is suggested. DOI: 10.1103/PhysRevB.86.247101;2;0;0;0;2;1098-0121;WOS:000312292100006;;;J;Wan, Li;Iacovella, Christopher R.;Nguyen, Trung D.;Docherty, Hugh;Cummings, Peter T.;Confined fluid and the fluid-solid transition: Evidence from absolute;free energy calculations;PHYSICAL REVIEW B;86;21;214105;10.1103/PhysRevB.86.214105;DEC 11 2012;2012;The debate on whether an organic fluid nanoconfined by mica sheets will;undergo a fluid-to-solid transition as the fluid film thickness is;reduced below a critical value has lasted over two decades. Extensive;experimental and simulation investigations have thus far left this;question only partially addressed. In this work, we adapt and apply;absolute free energy calculations to analyze the phase behavior of a;simple model for nanoconfined fluids, consisting of spherical;Lennard-Jones (LJ) molecules confined between LJ solid walls, which we;use in combination with grand-canonical molecular dynamics simulations.;Absolute Helmholtz free energy calculations of the simulated;nanoconfined systems directly support the existence of order-disorder;phase transition as a function of decreasing wall separation, providing;results in close agreement with previous experiments and detailed;atomistic simulations. DOI: 10.1103/PhysRevB.86.214105;Iacovella, Christopher/D-2050-2011; Cummings, Peter/B-8762-2013;Cummings, Peter/0000-0002-9766-2216;5;0;0;0;5;1098-0121;WOS:000312290000001;;;J;Zaletel, Michael P.;Mong, Roger S. K.;Exact matrix product states for quantum Hall wave functions;PHYSICAL REVIEW B;86;24;245305;10.1103/PhysRevB.86.245305;DEC 11 2012;2012;We show that the model wave functions used to describe the fractional;quantum Hall effect have exact representations as matrix product states;(MPS). These MPS can be implemented numerically in the orbital basis of;both finite and infinite cylinders, which provides an efficient way of;calculating arbitrary observables. We extend this approach to the;charged excitations and numerically compute their Berry phases. Finally,;we present an algorithm for numerically computing the real-space;entanglement spectrum starting from an arbitrary orbital basis MPS,;which allows us to study the scaling properties of the real-space;entanglement spectra on infinite cylinders. The real-space entanglement;spectrum obeys a scaling form dictated by the edge conformal field;theory, allowing us to accurately extract the two entanglement;velocities of the Moore-Read state. In contrast, the orbital space;spectrum is observed to scale according to a complex set of power laws;that rule out a similar collapse. DOI: 10.1103/PhysRevB.86.245305;16;0;0;0;16;1098-0121;WOS:000312292100002;;;J;Berdiyorov, G. R.;Chao, X. H.;Peeters, F. M.;Wang, H. B.;Moshchalkov, V. V.;Zhu, B. Y.;Magnetoresistance oscillations in superconducting strips: A;Ginzburg-Landau study;PHYSICAL REVIEW B;86;22;224504;10.1103/PhysRevB.86.224504;DEC 10 2012;2012;Within the time-dependent Ginzburg-Landau theory we study the dynamic;properties of current-carrying superconducting strips in the presence of;a perpendicular magnetic field. We found pronounced voltage peaks as a;function of the magnetic field, the amplitude of which depends both on;sample dimensions and external parameters. These voltage oscillations;are a consequence of moving vortices, which undergo alternating static;and dynamic phases. At higher fields or for high currents, the;continuous motion of vortices is responsible for the monotonic;background on which the resistance oscillations due to the entry of;additional vortices are superimposed. Mechanisms for such;vortex-assisted resistance oscillations are discussed. Qualitative;changes in the magnetoresistance curves are observed in the presence of;random defects, which affect the dynamics of vortices in the system.;Zhu, Bei Yi/C-1506-2011; Moshchalkov, Victor/I-7232-2013; Wang, HB/M-7461-2013;2;0;0;0;2;1098-0121;WOS:000312064300004;;;J;Bogan, A.;Hatke, A. T.;Studenikin, S. A.;Sachrajda, A.;Zudov, M. A.;Pfeiffer, L. N.;West, K. W.;Microwave-induced resistance oscillations in tilted magnetic fields;PHYSICAL REVIEW B;86;23;235305;10.1103/PhysRevB.86.235305;DEC 10 2012;2012;We have studied the effect of an in-plane magnetic field on;microwave-induced resistance oscillations in a high mobility;two-dimensional electron system. We have found that the oscillation;amplitude decays exponentially with an in-plane component of the;magnetic field B-parallel to. While these findings cannot be accounted;for by existing theories, our analysis suggests that the decay can be;explained by a B-parallel to-induced correction to the quantum;scattering rate, which is quadratic in B-parallel to.;Zudov, Michael/A-3013-2008;7;1;0;0;7;1098-0121;WOS:000312064700005;;;J;Dahl, J.;Kuzmin, M.;Adell, J.;Balasubramanian, T.;Laukkanen, P.;Formation of polar InN with surface Fermi level near the valence band;maximum by means of ammonia nitridation;PHYSICAL REVIEW B;86;24;245304;10.1103/PhysRevB.86.245304;DEC 10 2012;2012;Development of InN films for devices is hindered due to metallic In;clusters, formed readily during growth, and unintentional n-type;conductivity of the nominally undoped films, including surface;electron-accumulation layers via the Fermi level pinning into the;conduction band. Plasma nitridation eliminates even large In clusters;from the surface by changing them to two-dimensional InN [Yamaguchi and;Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar;approach, that is, nitridation of In-covered surfaces with ammonia (NH3);to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001);substrates. By means of scanning tunneling microscopy and spectroscopy,;as well as photoelectron spectroscopy, we show that this simple NH3;nitridation provides the hitherto not reported formation of polar;InN(000-1) films with the surface Fermi level close to the valence band;maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84,;205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304;1;0;0;0;1;1098-0121;WOS:000312065400006;;;J;Ghosh, Sankha;English, Niall J.;Ab initio study on optoelectronic properties of interstitially versus;substitutionally doped titania;PHYSICAL REVIEW B;86;23;235203;10.1103/PhysRevB.86.235203;DEC 10 2012;2012;Density functional theory calculations were performed for Cr, N, and C;monodoping in both rutile and anatase phases of crystalline titania. The;formation and binding energies, electronic structure, and optical;properties were determined. It was found that although C has a;predominant preference for occupying a lattice O-site, N has higher;preference for interstitial occupancy in the vicinity of an O atom in;anatase, whereas both prefer to maintain interstitial occupancy in;rutile, albeit with both N and C exhibiting a relatively higher;preference for anatase over rutile. Furthermore, Cr is more;energetically stable in the rutile phase relative to anatase for;substitutional doping, albeit with comparable formation energies for;both interstitial and substitutional doping. Interstitial C-impurities;were observed to occupy the oxygen lattice sites in anatase, but not in;rutile. In terms of N-doping, it was found that interstitial doping;exhibits higher visible light photoactivity than substitutional doping.;1;0;0;0;1;1098-0121;WOS:000312064700003;;;J;Howie, Ross T.;Scheler, Thomas;Guillaume, Christophe L.;Gregoryanz, Eugene;Proton tunneling in phase IV of hydrogen and deuterium;PHYSICAL REVIEW B;86;21;214104;10.1103/PhysRevB.86.214104;DEC 10 2012;2012;Using in situ optical spectroscopy we have investigated the temperature;stability of the mixed atomic and molecular phases IV of dense deuterium;and hydrogen. Through a series of low-temperature experiments at high;pressures, we observe phase III-to-IV transformation, imposing;constraints on the P-T phase diagrams. The spectral features of the;phase IV-III transition and differences in appearances of the isotopes;Raman spectra strongly indicate the presence of proton tunneling in;phase IV. No differences between isotopes were observed in absorption;spectroscopic studies, resulting in identical values for the band gap.;The extrapolation of the combined band gap yields 375 GPa as the minimum;transition pressure to the metallic state of hydrogen (deuterium). The;minute changes in optical spectra above 275 GPa might suggest the;presence of a new solid modification of hydrogen (deuterium), closely;related structurally to phase IV. DOI: 10.1103/PhysRevB. 86.214104;15;1;0;0;15;1098-0121;WOS:000312063700001;;;J;Hrahsheh, Fawaz;Hoyos, Jose A.;Vojta, Thomas;Rounding of a first-order quantum phase transition to a strong-coupling;critical point;PHYSICAL REVIEW B;86;21;214204;10.1103/PhysRevB.86.214204;DEC 10 2012;2012;We investigate the effects of quenched disorder on first-order quantum;phase transitions on the example of the N-color quantum Ashkin-Teller;model. By means of a strong-disorder renormalization group, we;demonstrate that quenched disorder rounds the first-order quantum phase;transition to a continuous one for both weak and strong coupling between;the colors. In the strong-coupling case, we find a distinct type of;infinite-randomness critical point characterized by additional internal;degrees of freedom. We investigate its critical properties in detail and;find stronger thermodynamic singularities than in the random transverse;field Ising chain. We also discuss the implications for higher spatial;dimensions as well as unusual aspects of our renormalization-group;scheme. DOI: 10.1103/PhysRevB.86.214204;Hoyos, Jose/F-2742-2012;2;0;0;0;2;1098-0121;WOS:000312063700002;;;J;Huevonen, D.;Zhao, S.;Ehlers, G.;Mansson, M.;Gvasaliya, S. N.;Zheludev, A.;Excitations in a quantum spin liquid with random bonds;PHYSICAL REVIEW B;86;21;214408;10.1103/PhysRevB.86.214408;DEC 10 2012;2012;We present the results of an inelastic neutron-scattering study on two;bond disordered quasi-two-dimensional quantum magnets;(C4H12N2)Cu-2(Cl1-xBrx)(6) with x = 0.035 and 0.075. We observe an;increase of spin gap, a reduction of magnon bandwidth, and a decrease of;magnon lifetimes compared to the x = 0 sample. Additional magnon damping;is observed at higher energies away from the zone center, which is found;to follow the density of single-particle states. DOI:;10.1103/PhysRevB.86.214408;Instrument, CNCS/B-4599-2012; Ehlers, Georg/B-5412-2008; Huvonen, Dan/A-6664-2008; Mansson, Martin/C-1134-2014;8;0;0;0;8;1098-0121;WOS:000312063700005;;;J;Hwang, Kyusung;Park, Kwon;Kim, Yong Baek;Influence of Dzyaloshinskii-Moriya interactions on magnetic structure of;a spin-1/2 deformed kagome lattice antiferromagnet;PHYSICAL REVIEW B;86;21;214407;10.1103/PhysRevB.86.214407;DEC 10 2012;2012;Motivated by the recent neutron-scattering experiment on Rb2Cu3SnF12;[Nature Phys. 6, 865 (2010)], we investigate the effect of;Dzyaloshinskii-Moriya interactions in a theoretical model for the;magnetic structure of this material. Considering the valence bond solid;ground state, which has a 12-site unit cell, we develop the bond;operator mean-field theory. It is shown that the Dzyaloshinskii-Moriya;interactions significantly modify the triplon dispersions around the;Gamma point and cause a shift of the spin-gap (the minimum triplon gap);position from the K to Gamma point in the first Brillouin zone. The spin;gap is also evaluated in exact diagonalization studies on a 24-site;cluster. We discuss a magnetic transition induced by the;Dzyaloshinskii-Moriya interactions in the bond operator framework.;Moreover, the magnetization process under external magnetic fields is;studied within the exact diagonalization approach. We find that the;results of both approaches are consistent with the experimental;findings. DOI: 10.1103/PhysRevB.86.214407;3;0;0;0;3;1098-0121;WOS:000312063700004;;;J;Ignacio, M.;Pierre-Louis, O.;Impalement dynamics and Brownian motion of solid islands on nanopillars;PHYSICAL REVIEW B;86;23;235410;10.1103/PhysRevB.86.235410;DEC 10 2012;2012;We study the dynamics of solid islands deposited on nanopillars using;kinetic Monte Carlo simulations. The islands are initially placed on the;top of the pillars, in the so-called Cassie-Baxter state. For high;pillars, the dynamics is divided into two phases. The first phase;corresponds to the deterministic and irreversible impalement of the;island. The dynamics of this phase is governed by surface diffusion.;Once the island has collapsed, a second phase is observed where the;island exhibits Brownian motion along the pillars, characterized by a;diffusion constant D-i and a kinetic coefficient K-i accounting for the;interaction of the island with the top of the pillars. The random walk;stops when the island reaches the bottom of the substrate, where it;sticks irreversibly. When the island wettability is small, the island;diffusion constant D-i is controlled by adatom diffusion, and scales as;the inverse of the number of atoms in the island. In contrast, for large;wettabilities, we observe that D-i oscillates as the island size is;increased. The minimum of the oscillations corresponds to;nucleation-limited dynamics, where D-i is independent of the island;size. We also determine the time for partial irreversible collapse on;shorter pillars, leading to the so-called Wenzel state. Finally, we;discuss the orders of magnitude of the typical duration of these;processes.;2;0;0;0;2;1098-0121;WOS:000312064700007;;;J;Jarlborg, T.;Barbiellini, B.;Markiewicz, R. S.;Bansil, A.;Different doping from apical and planar oxygen vacancies in;Ba2CuO4-delta and La2CuO4-delta: First-principles band structure;calculations;PHYSICAL REVIEW B;86;23;235111;10.1103/PhysRevB.86.235111;DEC 10 2012;2012;First-principles band structure calculations for large supercells of;Ba2CuO4-delta and La2CuO4-delta with different distributions and;concentrations of oxygen vacancies show that the effective doping on;copper sites strongly depends on where the vacancy is located. A vacancy;within the Cu layer produces a weak doping effect while a vacancy;located at an apical oxygen site acts as a stronger electron dopant on;the copper layers and gradually brings the electronic structure close to;that of La2-xSrxCuO4. These effects are robust and only depend;marginally on lattice distortions. Our results show that deoxygenation;can reduce the effect of traditional La/Sr or La/Nd substitutions. Our;study clearly identifies location of the dopant in the crystal structure;as an important factor in doping of the cuprate planes.;6;0;0;0;6;1098-0121;WOS:000312064700002;;;J;Kunimori, K.;Nakamura, M.;Nohara, H.;Tanida, H.;Sera, M.;Nishioka, T.;Matsumura, M.;Unusual magnetic order in CeT2Al10 (T = Ru, Os) in comparison with;localized NdFe2Al10;PHYSICAL REVIEW B;86;24;245106;10.1103/PhysRevB.86.245106;DEC 10 2012;2012;We have investigated the magnetic properties in the well localized;compound NdFe2Al10 and the Kondo semiconductor CeT2Al10 (T = Ru, Os) to;clarify the origin of the unusual magnetic order in CeT2Al10. In;NdFe2Al10, the experimental results of the magnetic properties could be;reproduced very well by the mean-field calculation for the;two-sublattice model. In CeT2Al10 we could reproduce the anisotropic;magnetic susceptibility in the paramagnetic region above 60-100 K very;well by the mean-field calculation for the two-sublattice model;introducing an anisotropic exchange interaction and the recently;determined crystalline electric field (CEF) level scheme from Strigari;et al. [Phys. Rev. B 86, 081105 (2012)]. However, in the;antiferromagnetic (AFM) ordered state, we could not reproduce the;experimental results at all in the framework of the mean-field;calculation for the two-sublattice model. We propose that although the;magnetic properties in the paramagnetic region above 60-100 K could be;understood well by a localized picture, the ordered state could not, and;that the c-f hybridization, especially along the a axis, is associated;with the unusual magnetic order in CeT2Al10. DOI:;10.1103/PhysRevB.86.245106;Tanida, Hiroshi/E-1878-2013;14;0;0;0;14;1098-0121;WOS:000312065400003;;;J;Lee, Jin Bae;Hong, Won G.;Kim, Hae Jin;Jaglicic, Z.;Jazbec, S.;Wencka, M.;Jelen, A.;Dolinsek, J.;Canted antiferromagnetism on a nanodimensional spherical surface;geometry: The case of MnCO3 small hollow nanospheres;PHYSICAL REVIEW B;86;22;224407;10.1103/PhysRevB.86.224407;DEC 10 2012;2012;Canted antiferromagnetism on a nanodimensional spherical surface;geometry was investigated on manganese carbonate MnCO3 small hollow;nanospheres of mean diameter 7.0 +/- 0.3 nm and shell thickness of 0.7;nm, by performing magnetic measurements and specific heat study, in;comparison to the bulk form of the same material. Contrary to the;expectation that small magnetic nanoparticles become superparamagnetic,;the phase transition to the canted antiferromagnetic (AFM) state in the;MnCO3 hollow nanospheres is preserved and retains, at a qualitative;level, all the features of the canted AFM state of the bulk material. At;a quantitative level, some significant differences between the hollow;nanospheres and the bulk were observed, which can all be explained by;the weakened interspin interactions in the hollow nanospheres due to;reduced atomic coordination by the neighboring atoms. This makes the;canted AFM structure of the hollow nanospheres more soft and fragile;with respect to external forces like the magnetic field, as compared to;the rigid and robust structure of the bulk material.;1;0;0;0;1;1098-0121;WOS:000312064300002;;;J;Levkivskyi, Ivan P.;Froehlich, Juerg;Sukhorukov, Eugene V.;Theory of fractional quantum Hall interferometers;PHYSICAL REVIEW B;86;24;245105;10.1103/PhysRevB.86.245105;DEC 10 2012;2012;Interference of fractionally charged quasiparticles is expected to lead;to Aharonov-Bohm oscillations with periods larger than the flux quantum.;However, according to the Byers-Yang theorem, observables of an;electronic system are invariant under an adiabatic insertion of a;quantum of singular flux. We resolve this seeming paradox by considering;a microscopic model of electronic interferometers made from a quantum;Hall liquid at filling factor 1/m with the shape of a Corbino disk. In;such interferometers, the quantum Hall edge states are utilized in place;of optical beams, the quantum point contacts play the role of beam;splitters connecting different edge channels, and Ohmic contacts;represent a source and drain of quasiparticle currents. Depending on the;position of Ohmic contacts, one distinguishes interferometers of;Fabry-Perot (FP) and Mach-Zehnder (MZ) type. An approximate ground state;of such interferometers is described by a Laughlin-type wave function,;and low-energy excitations are incompressible deformations of this;state. We construct a low-energy effective theory by restricting the;microscopic Hamiltonian of electrons to the space of incompressible;deformations and show that the theory of the quantum Hall edge so;obtained is a generalization of a chiral conformal field theory. In our;theory, a quasiparticle tunneling operator is found to be a;single-valued function of tunneling point coordinates, and its phase;depends on the topology determined by the positions of Ohmic contacts.;We describe strong coupling of the edge states to Ohmic contacts and the;resulting quasiparticle current through the interferometer with the help;of a master equation. We find that the coherent contribution to the;average quasiparticle current through MZ interferometers does not vanish;after summation over quasiparticle degrees of freedom. However, it;acquires oscillations with the electronic period, in agreement with the;Byers-Yang theorem. Importantly, our theory does not rely on any ad hoc;constructions, such as Klein factors, etc. When the magnetic flux;through an FP interferometer is varied with a modulation gate, current;oscillations have the quasiparticle periodicity, thus allowing for;spectroscopy of quantum Hall edge states. DOI:;10.1103/PhysRevB.86.245105;2;0;0;0;2;1098-0121;WOS:000312065400002;;;J;Li, Chun-Mei;Luo, Hu-Bin;Hu, Qing-Miao;Yang, Rui;Johansson, Borje;Vitos, Levente;Role of magnetic and atomic ordering in the martensitic transformation;of Ni-Mn-In from a first-principles study;PHYSICAL REVIEW B;86;21;214205;10.1103/PhysRevB.86.214205;DEC 10 2012;2012;The composition-dependent lattice parameters, crystal structure, elastic;properties, magnetic moment, and electronic structure of Ni2Mn1+xIn1-x;(0 <= x <= 0.6) are studied by using first-principles calculations. It;is shown that the martensitic phase transition (MPT) from cubic L2(1) to;tetragonal L1(0) accompanies theMn(Mn)-Mn-In ferromagnetic (FM) to;antiferromagnetic (AFM) transition, at around the critical composition x;= 0.32, in agreement with the experimental measurement. The Mn-In atomic;disorder leads to decreasing stability of the martensite relative to the;austenite, which depresses the MPT. The shear elastic constant C' of the;parent phase first decreases slightly with increasing x and then remains;almost unchanged above x = 0.32, indicating C' alone cannot account for;the increase of the MPT temperature with x. The total magnetic moments;for the L2(1) phase are in good agreement with those determined by;experiments, whereas for the L1(0) phase they are slightly larger than;the experimental data due to the possibleMn-In atomic disorder in the;sample. The calculated density of states demonstrate that the covalent;bonding between the minority spin states of Ni and In plays an important;role in both the magnetic and structural stability. DOI:;10.1103/PhysRevB.86.214205;Hu, Qing-Miao/D-3345-2014;5;0;0;0;5;1098-0121;WOS:000312063700003;;;J;Liu, Bin;Seko, Atsuto;Tanaka, Isao;Cluster expansion with controlled accuracy for the MgO/ZnO pseudobinary;system via first-principles calculations;PHYSICAL REVIEW B;86;24;245202;10.1103/PhysRevB.86.245202;DEC 10 2012;2012;Using the cluster analysis of the structure population (CASP) method,;error of cluster expansion (CE) can be controlled. Combining the CASP-CE;with a systematic set of first-principles total energies, a model;wide-gap pseudobinary system with simple crystal structures MgO-ZnO is;revisited. Ground-state structures are exhaustively searched for both;rocksalt and wurtzite structures. A few structures as yet unreported are;found. The vibrational contribution to the Gibbs free-energy is;evaluated by first-principles phonon calculations within the;quasiharmonic approximation. Monte Carlo simulations are then made to;compute grand potentials of two structures using the thermodynamic;integration. DOI: 10.1103/PhysRevB.86.245202;Tanaka, Isao/B-5941-2009; Liu, Bin/N-9955-2014;1;1;0;0;1;1098-0121;WOS:000312065400005;;;J;Liu, Pan;Santana, Juan A. Colon;Dai, Qilin;Wang, Xianjie;Dowben, Peter A.;Tang, Jinke;Sign of the superexchange coupling between next-nearest neighbors in EuO;PHYSICAL REVIEW B;86;22;224408;10.1103/PhysRevB.86.224408;DEC 10 2012;2012;The sign of the superexchange coupling J(2) between next-nearest;neighboring Eu2+ magnetic moments in EuO is a matter subject to debate.;We have obtained evidence that this coupling is of antiferromagnetic;nature (J(2) < 0). EuO thin films grown at different temperatures;suggest that lattice expansion results in enhancement of T-C as clearly;observed in stoichiometric EuO films grown on CaF2 substrates. Resonant;photoemission spectroscopy provides compelling evidence of strong;hybridization between O 2p and Eu 5d6s6p weighted bands, suggesting that;strong superexchange may be mediated by oxygen, thus consistent with the;observed antiferromagnetic behavior between the next-nearest neighboring;Eu atoms via nearest neighbor oxygen in EuO.;Dai, Qilin/K-1437-2013;2;0;0;0;2;1098-0121;WOS:000312064300003;;;J;Luisier, Mathieu;Atomistic modeling of anharmonic phonon-phonon scattering in nanowires;PHYSICAL REVIEW B;86;24;245407;10.1103/PhysRevB.86.245407;DEC 10 2012;2012;Phonon transport is simulated in ultrascaled nanowires in the presence;of anharmonic phonon-phonon scattering. A modified valence-force-field;model containing four types of bond deformation is employed to describe;the phonon band structure. The inclusion of five additional bond;deformation potentials allows us to account for anharmonic effects.;Phonon-phonon interactions are introduced through inelastic scattering;self-energies solved in the self-consistent Born approximation in the;nonequilibrium Green's function formalism. After calibrating the model;with experimental data, the thermal current, resistance, and;conductivity of < 100 >-, < 110 >-, and < 111 >-oriented Si nanowires;with different lengths and temperatures are investigated in the presence;of anharmonic phonon-phonon scattering and compared to their ballistic;limit. It is found that all the simulated thermal currents exhibit a;peak at temperatures around 200 K if phonon scattering is turned on;while they monotonically increase when this effect is neglected.;Finally, phonon transport through Si-Ge-Si nanowires is considered. DOI:;10.1103/PhysRevB.86.245407;12;1;0;0;12;1098-0121;WOS:000312065400007;;;J;Nemirovskii, Sergey K.;Fluctuations of the vortex line density in turbulent flows of quantum;fluids;PHYSICAL REVIEW B;86;22;224505;10.1103/PhysRevB.86.224505;DEC 10 2012;2012;We present an analytical study of fluctuations of the vortex line;density (VLD) in turbulent flows of;quantum fluids. Two cases are considered. The first is the;counterflowing (Vinen) turbulence, where the vortex lines are;disordered, and the evolution of quantity L(t) obeys the Vinen equation.;The second case is the fluctuations of the VLD in a single vortex;bundle, which develops inside the domain of the concentrated;normal-fluid vorticity. The dynamics of the vortex bundle is described;by the Hall-Vinen-Bekarevich-Khalatnikov (HVBK) equations. The latter;case is of special interest, because the set of the quantum vortex;bundles is believed to mimic classical hydrodynamic turbulence. In;steady states the VLD is related to the normal velocity as L = (rho;gamma/rho(s))(2)upsilon(2)(n) for the Vinen case. In the vortex bundle;case, which appears inside the domain of a concentrated vorticity of;normal fluid, the stationary quantity L can be found from the matching;of velocities and is described by L = vertical bar del x v(n)vertical;bar/kappa. In nonstationary situations, and particularly in the;fluctuating turbulent flow, there is a retardation between the;instantaneous value of the normal velocity and the quantity L. This;retardation tends to decrease in accordance with the inner dynamics,;which has a relaxation character. In both cases, the relaxation dynamics;of the VLD is related to fluctuations of the relative velocity. However,;for the Vinen case the rate of temporal change for L(t) is directly;dependent upon delta v(ns), whereas for HVBK dynamics it depends on del;x delta v(ns). Therefore, for the disordered case the spectrum coincides with the spectrum omega(-5/3). In the;case of the bundle arrangement, the spectrum of the VLD varies (at;different temperatures) from omega(1/3) to omega(-5/3) dependencies.;This conclusion may serve as a basis for the experimental determination;of what kind of turbulence is implemented in different types of;generation.;0;0;0;0;0;1098-0121;WOS:000312064300005;;;J;Peelaers, H.;Van de Walle, C. G.;Effects of strain on band structure and effective masses in MoS2;PHYSICAL REVIEW B;86;24;241401;10.1103/PhysRevB.86.241401;DEC 10 2012;2012;We use hybrid density functional theory to explore the band structure;and effective masses of MoS2, and the effects of strain on the;electronic properties. Strain allows engineering the magnitude as well;as the nature (direct versus indirect) of the band gap. Deformation;potentials that quantify these changes are reported. The calculations;also allow us to investigate the transition in band structure from bulk;to monolayer, and the nature and degeneracy of conduction-band valleys.;Investigations of strain effects on effective masses reveal that small;uniaxial stresses can lead to large changes in the hole effective mass.;DOI: 10.1103/PhysRevB.86.241401;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;56;3;0;0;56;1098-0121;WOS:000312065400001;;;J;Phien, Ho N.;Vidal, Guifre;McCulloch, Ian P.;Infinite boundary conditions for matrix product state calculations;PHYSICAL REVIEW B;86;24;245107;10.1103/PhysRevB.86.245107;DEC 10 2012;2012;We propose a formalism to study dynamical properties of a quantum;many-body system in the thermodynamic limit by studying a finite system;with "infinite boundary conditions" where both finite-size effects and;boundary effects have been eliminated. For one-dimensional systems,;infinite boundary conditions are obtained by attaching two boundary;sites to a finite system, where each of these two sites effectively;represents a semi-infinite extension of the system. One can then use;standard finite-size matrix product state techniques to study a region;of the system while avoiding many of the complications normally;associated with finite-size calculations such as boundary Friedel;oscillations. We illustrate the technique with an example of time;evolution of a local perturbation applied to an infinite;(translationally invariant) ground state, and use this to calculate the;spectral function of the S = 1 Heisenberg spin chain. This approach is;more efficient and more accurate than conventional simulations based on;finite-size matrix product state and density-matrix;renormalization-group approaches. DOI: 10.1103/PhysRevB.86.245107;McCulloch, Ian/A-6037-2011;McCulloch, Ian/0000-0002-8983-6327;6;0;0;0;6;1098-0121;WOS:000312065400004;;;J;Polyakov, O. P.;Corbetta, M.;Stepanyuk, O. V.;Oka, H.;Saletsky, A. M.;Sander, D.;Stepanyuk, V. S.;Kirschner, J.;Spin-dependent Smoluchowski effect;PHYSICAL REVIEW B;86;23;235409;10.1103/PhysRevB.86.235409;DEC 10 2012;2012;Electron charge near atomically sharp corrugations at the surfaces of a;solid tends to spill out and smoothen the abrupt variation of the;positions of the positively charged atomic nuclei. The reason is that;electrons are much less localized than nuclei. This has been discussed;already some 70 years ago by Smoluchowski [R. Smoluchowski, Phys. Rev.;60, 661 (1941)], and the corresponding effect of charge redistribution;near surface corrugations bears his name. The Smoluchowski effect;focuses on the total electron charge density. It neglects that;electrons-in addition to charge-also carry a spin. We discuss;spin-dependent electron spill out and demonstrate in a combined;theoretical and experimental work that compelling consequences for;spin-polarization and spin-dependent transport arise at the edges of;magnetic nanostructures due to the spin-dependent Smoluchowski effect.;We find a variation of the tunnel magnetoresistance ratio of more than;20% on a length scale of a few atomic diameters.;3;0;0;0;3;1098-0121;WOS:000312064700006;;;J;Rajeswaran, B.;Khomskii, D. I.;Zvezdin, A. K.;Rao, C. N. R.;Sundaresan, A.;Field-induced polar order at the Neel temperature of chromium in;rare-earth orthochromites: Interplay of rare-earth and Cr magnetism;PHYSICAL REVIEW B;86;21;214409;10.1103/PhysRevB.86.214409;DEC 10 2012;2012;We report field-induced switchable polarization (P similar to 0.2-0.8 mu;C/cm(2)) below the Neel temperature of chromium (T-N(Cr)) in weakly;ferromagnetic rare-earth orthochromites, RCrO3 (R = rare earth) but only;when the rare-earth ion is magnetic. Intriguingly, the polarization in;ErCrO3 (T-C = 133 K) disappears at a spin-reorientation (Morin);transition (T-SR similar to 22 K) below which the weak ferromagnetism;associated with the Cr sublattice also disappears, demonstrating the;crucial role of weak ferromagnetism in inducing the polar order.;Further, the polarization (P) is strongly influenced by an applied;magnetic field, indicating a strong magnetoelectric effect. We suggest;that the polar order occurs in RCrO3, due to the combined effect of the;poling field that breaks the symmetry and the exchange field on the R;ion from the Cr sublattice that stabilizes the polar state. We propose;that a similar mechanism could work in the isostructural rare-earth;orthoferrites RFeO3 as well. DOI: 10.1103/PhysRevB.86.214409;Athinarayanan, Sundaresan/B-2176-2010; Zvezdin, Anatoly/K-2072-2013;24;1;0;0;24;1098-0121;WOS:000312063700006;;;J;Rhim, Jun-Won;Park, Kwon;Self-similar occurrence of massless Dirac particles in graphene under a;magnetic field;PHYSICAL REVIEW B;86;23;235411;10.1103/PhysRevB.86.235411;DEC 10 2012;2012;Intricate interplay between the periodicity of the lattice structure and;that of the cyclotron motion gives rise to a well-known self-similar;fractal structure of the energy eigenvalue, known as the Hofstadter;butterfly, for an electron moving in lattice under magnetic field.;Connected with the n = 0 Landau level, the central band of the;Hofstadter butterfly is especially interesting in the honeycomb lattice.;While the entire Hofstadter butterfly can be in principle obtained by;solving Harper's equations numerically, the weak-field limit, most;relevant for experiment, is intractable owing to the fact that the size;of the Hamiltonian matrix, which needs to be diagonalized, diverges. In;this paper, we develop an effective Hamiltonian method that can be used;to provide an accurate analytic description of the central Hofstadter;band in the weak-field regime. One of the most important discoveries;obtained in this work is that massless Dirac particles always exist;inside the central Hofstadter band no matter how small the magnetic flux;may become. In other words, with its bandwidth broadened by the lattice;effect, the n = 0 Landau level contains massless Dirac particles within;itself. In fact, by carefully analyzing the self-similar recursive;pattern of the central Hofstadter band, we conclude that massless Dirac;particles should occur under arbitrary magnetic field. As a corollary,;the central Hofstadter band also contains a self-similar structure of;recursive Landau levels associated with such massless Dirac particles.;To assess the experimental feasibility of observing massless Dirac;particles inside the central Hofstadter band, we compute the width of;the central Hofstadter band as a function of magnetic field in the;weak-field regime.;5;0;0;0;5;1098-0121;WOS:000312064700008;;;J;Robinson, Zachary R.;Tyagi, Parul;Mowll, Tyler R.;Ventrice, Carl A., Jr.;Hannon, James B.;Argon-assisted growth of epitaxial graphene on Cu(111);PHYSICAL REVIEW B;86;23;235413;10.1103/PhysRevB.86.235413;DEC 10 2012;2012;The growth of graphene by catalytic decomposition of ethylene on Cu(111);in an ultrahigh vacuum system was investigated with low-energy electron;diffraction, low-energy electron microscopy, and atomic force;microscopy. Attempts to form a graphene overlayer using ethylene at;pressures as high as 10 mTorr and substrate temperatures as high as 900;degrees C resulted in almost no graphene growth. By using an argon;overpressure, the growth of epitaxial graphene on Cu(111) was achieved.;The suppression of graphene growth without the use of an argon;overpressure is attributed to Cu sublimation at elevated temperatures.;During the initial stages of growth, a random distribution of rounded;graphene islands is observed. The predominant rotational orientation of;the islands is within +/- 1 degrees of the Cu(111) substrate lattice.;Robinson, Zachary/B-5128-2013;11;1;0;0;11;1098-0121;WOS:000312064700010;;;J;Sheps, Tatyana;Brocious, Jordan;Corso, Brad L.;Guel, O. Tolga;Whitmore, Desire;Durkaya, Goeksel;Potma, Eric O.;Collins, Philip G.;Four-wave mixing microscopy with electronic contrast of individual;carbon nanotubes;PHYSICAL REVIEW B;86;23;235412;10.1103/PhysRevB.86.235412;DEC 10 2012;2012;We review an extensive study of the factors that influence the intensity;of coherent, nonlinear four-wave mixing (FWM) in carbon nanotubes, with;particular attention to the variability inherent to single-walled carbon;nanotubes (SWNTs). Through a combination of spatial imaging and;spectroscopy applied to hundreds of individual SWNTs in optoelectronic;devices, the FWM response is shown to vary systematically with;free-carrier concentration. This dependence is manifested both in the;intrinsic SWNT band structure and also by extrinsic and environmental;effects. We demonstrate the sensitivity of the SWNT FWM signal by;investigating SWNTs transferred from one substrate to another, before;and after the introduction of chemical damage, and with chemical and;electrostatic doping. The results demonstrate FWM as a sensitive;technique for interrogating SWNT optoelectronic properties.;3;0;0;0;3;1098-0121;WOS:000312064700009;;;J;Tian, Zhiting;Esfarjani, Keivan;Chen, Gang;Enhancing phonon transmission across a Si/Ge interface by atomic;roughness: First-principles study with the Green's function method;PHYSICAL REVIEW B;86;23;235304;10.1103/PhysRevB.86.235304;DEC 10 2012;2012;Knowledge on phonon transmittance as a function of phonon frequency and;incidence angle at interfaces is vital for multiscale modeling of heat;transport in nanostructured materials. Although thermal conductivity;reduction in nanostructured materials can usually be described by phonon;scattering due to interface roughness, we show how a Green's function;method in conjunction with the Landauer formalism suggests that;interface roughness induced by atomic mixing can increase phonon;transmission and interfacial thermal conductance. This is an attempt to;incorporate first-principles force constants derived from ab initio;density-functional theory (DFT) into Green's function calculation for;infinitely large three-dimensional crystal structure. We also;demonstrate the importance of accurate force constants by comparing the;phonon transmission and thermal conductance using force constants;obtained from semiempirical Stillinger-Weber potential and;first-principles DFT calculations.;Chen, Gang/J-1325-2014;Chen, Gang/0000-0002-3968-8530;14;0;0;0;14;1098-0121;WOS:000312064700004;;;J;Uhm, Sang Hoon;Yeom, Han Woong;Electron-phonon interaction of one-dimensional and two-dimensional;surface states in indium adlayers on the Si(111) surface;PHYSICAL REVIEW B;86;24;245408;10.1103/PhysRevB.86.245408;DEC 10 2012;2012;We performed angle-resolved photoelectron spectroscopy measurements on;one-and two-dimensional (1D and 2D) metallic surface states in indium;layers on the Si(111) surface as a function of temperature. The;temperature dependence of surface-state energy widths was used to;estimate the electron-phonon coupling constant lambda. The 2D metallic;surface states of the root 7 x root 3-In layer above one monolayer;exhibit lambda = 0.8 similar to 1.0, similar to the value of bulk indium;0.9. This is discussed in the light of a recent structure model with a;double indium layer and the relatively high superconducting transition;temperature of this surface. On the other hand, the lambda's of two 1D;surface states of the 4 x 1-In surface with one monolayer of indium are;much higher than that of root 7 x root 3-In, reaching 1.8, which is the;largest ever reported for a surface state. The origin of the enhanced;electron-phonon coupling and its relationship to the charge-density-wave;phase transition of this surface are discussed. DOI:;10.1103/PhysRevB.86.245408;1;0;0;0;1;1098-0121;WOS:000312065400008;;;J;Vekilova, O. Yu.;Simak, S. I.;Ponomareva, A. V.;Abrikosov, I. A.;Influence of Ni on the lattice stability of Fe-Ni alloys at multimegabar;pressures;PHYSICAL REVIEW B;86;22;224107;10.1103/PhysRevB.86.224107;DEC 10 2012;2012;The lattice stability trends of the primary candidate for Earth's core;material, the Fe-Ni alloy, were examined from first principles. We;employed the exact muffin-tin orbital method (EMTO) combined with the;coherent potential approximation (CPA) for the treatment of alloying;effects. It was revealed that high pressure reverses the trend in the;relative stabilities of the body-centered cubic (bcc), face-centered;cubic (fcc), and hexagonal close-packed (hcp) phases observed at ambient;conditions. In the low pressure region the increase of Ni concentration;in the Fe-Ni alloy enhances the bcc phase destabilization relative to;the more close-packed fcc and hcp phases. However, at 300 GPa (Earth's;core pressure), the effect of Ni addition is opposite. The reverse of;the trend is associated with the suppression of the ferromagnetism of Fe;when going from ambient pressures to pressure conditions corresponding;to those of Earth's core. The first-principles results are explained in;the framework of the canonical band model.;0;0;0;0;0;1098-0121;WOS:000312064300001;;;J;Wang, Kang;Light wave states in quasiperiodic metallic structures;PHYSICAL REVIEW B;86;23;235110;10.1103/PhysRevB.86.235110;DEC 10 2012;2012;We investigate the light wave states in the octagonal and decagonal;quasiperiodic metallic structures by considering their respective;approximants at different orders. The mechanisms underlying the light;wave behaviors are studied in relation to various structure parameters;and configurations. We show that the formation of the first passbands,;that delimit the photonic band gaps and determine the plasma gaps,;involves only the lowest frequency resonance modes inside the fat tiles,;and that light localization occurs due to resonances in high symmetry;local centers as well as in the fragments of such centers, formed by the;skinny tiles. The structure filling rate affects the localized state;frequencies relative to the first passbands, as well as the plasma;frequency levels, by modulating the frequency levels of the resonance;modes and the widths of the passbands. The results of this study can be;generalized to other metallic quasiperiodic and related structures.;1;0;0;0;1;1098-0121;WOS:000312064700001;;;J;Singh, Shashi B.;Yang, L. T.;Wang, Y. F.;Shao, Y. C.;Chiang, C. W.;Chiou, J. W.;Lin, K. T.;Chen, S. C.;Wang, B. Y.;Chuang, C. H.;Ling, D. C.;Pong, W. F.;Tsai, M. H.;Tsai, H. M.;Pao, C. W.;Shiu, H. W.;Chen, C. H.;Lin, H.-J.;Lee, J. F.;Yamane, H.;Kosugi, N.;Correlation between p-type conductivity and electronic structure of;Cr-deficient CuCr1-xO2 (x = 0-0.1);PHYSICAL REVIEW B;86;24;241103;10.1103/PhysRevB.86.241103;DEC 7 2012;2012;The correlation between the p-type hole conduction and the electronic;structures of Cr-deficient CuCr1-xO2 (x = 0-0.1) compounds was;investigated using O K-, Cu, and Cr L-3,L-2-edge x-ray absorption;near-edge structure (XANES), scanning photoelectron microscopy, and;x-ray emission spectroscopy measurements. XANES spectra reveal a gradual;increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr;deficiency x, whereas, the valence of Cr remains constant as Cr3+. These;results indicate that the p-type conductivity in the CuCr1-xO2 samples;is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct;Cu1+-O-Cu2+ holemechanism. Remarkable Cr-deficiency-induced changes in;the densities of Cu 3d, Cu 3d-O 2p, andO2p states at or near the;valence-band maximum or the Fermi level were also observed. In addition,;a crossover of conductionmechanism from thermally activated (TA) hopping;to a combination of TA and Mott's three-dimensional variable range;hopping occurs around 250 K.;Yamane, Hiroyuki/K-5297-2013;0;0;0;0;0;1098-0121;WOS:000312025700004;;;J;Bossy, Jacques;Ollivier, Jacques;Schober, Helmut;Glyde, H. R.;Excitations of amorphous solid helium;PHYSICAL REVIEW B;86;22;224503;10.1103/PhysRevB.86.224503;DEC 7 2012;2012;We present neutron scattering measurements of the dynamic structure;factor S(Q,omega) of amorphous solid helium confined in 47-angstrom pore;diameter MCM-41 at pressure 48.6 bars. At low temperature T = 0.05 K, we;observe S(Q,omega) of the confined quantum amorphous solid plus the bulk;polycrystalline solid between the MCM-41 powder grains. No liquidlike;phonon-roton modes, other sharply defined modes at low energy (omega <;1.0 meV), or modes unique to a quantum amorphous solid that might;suggest superflow are observed. Rather, the S(Q, omega) of confined;amorphous and bulk polycrystalline solid appear to be very similar. At;higher temperature (T > 1 K), the amorphous solid in the MCM-41 pores;melts to a liquid which has a broad S(Q,omega) peaked near omega similar;or equal to 0, characteristic of normal liquid He-4 under pressure.;Expressions for the S(Q,omega) of amorphous and polycrystalline solid;helium are presented and compared. In previous measurements of liquid;He-4 confined in MCM-41 at lower pressure, the intensity in the liquid;roton mode decreases with increasing pressure until the roton vanishes;at the solidification pressure (38 bars), consistent with no roton in;the solid observed here.;2;0;0;0;2;1098-0121;WOS:000321857700002;;;J;Joly, Yves;Collins, S. P.;Grenier, Stephane;Tolentino, Helio C. N.;De Santis, Maurizio;Birefringence and polarization rotation in resonant x-ray diffraction;PHYSICAL REVIEW B;86;22;220101;10.1103/PhysRevB.86.220101;DEC 7 2012;2012;Birefringence can contribute to x-ray resonant Bragg diffraction and;likely explains recent novel data collected on CuO. We prove these;statements using ab initio simulations which reproduce the experimental;polarization effects quantitatively. We show that an unrotated;polarization signal-ruled out in resonant magnetic scattering within the;electric dipole approximation-arises from the dynamic change in;polarization inside the material. We are able to reproduce all the;related behavior with circular polarization and its dependence on the;angle of rotation about the Bragg wave vector. We provide a tool to;disentangle the various physical origins of the polarization rotation,;providing a more complete understanding of the illuminated material.;TOLENTINO, HELIO/J-1894-2014; Grenier, Stephane/N-1986-2014;TOLENTINO, HELIO/0000-0003-4032-5988; Grenier,;Stephane/0000-0001-8370-7375;12;1;0;0;12;1098-0121;WOS:000321857700001;;;J;Kovacs, Istvan A.;Igloi, Ferenc;Cardy, John;Corner contribution to percolation cluster numbers;PHYSICAL REVIEW B;86;21;214203;10.1103/PhysRevB.86.214203;DEC 7 2012;2012;We study the number of clusters in two-dimensional (2d) critical;percolation, N-Gamma, which intersect a given subset of bonds, Gamma. In;the simplest case, when Gamma is a simple closed curve, N-Gamma is;related to the entanglement entropy of the critical diluted quantum;Ising model, in which Gamma represents the boundary between the;subsystem and the environment. Due to corners in Gamma there are;universal logarithmic corrections to N-Gamma, which are calculated in;the continuum limit through conformal in-variance, making use of the;Cardy-Peschel formula. The exact formulas are confirmed by large scale;Monte Carlo simulations. These results are extended to anisotropic;percolation where they confirm a result of discrete holomorphicity.;Kovacs, Istvan/A-8447-2013;5;0;0;0;5;1098-0121;WOS:000312023100003;;;J;Komsa, Hannu-Pekka;Krasheninnikov, Arkady V.;Effects of confinement and environment on the electronic structure and;exciton binding energy of MoS2 from first principles;PHYSICAL REVIEW B;86;24;241201;10.1103/PhysRevB.86.241201;DEC 7 2012;2012;Using GW first-principles calculations for few-layer and bulk MoS2, we;study the effects of quantum confinement on the electronic structure of;this layered material. By solving the Bethe-Salpeter equation, we also;evaluate the exciton energy in these systems. Our results are in;excellent agreement with the available experimental data. Exciton;binding energy is found to dramatically increase from 0.1 eV in the bulk;to 1.1 eV in the monolayer. The fundamental band gap increases as well,;so that the optical transition energies remain nearly constant. We also;demonstrate that environments with different dielectric constants have a;profound effect on the electronic structure of the monolayer. Our;results can be used for engineering the electronic properties of MoS2;and other transition-metal dichalcogenides and may explain the;experimentally observed variations in the mobility of monolayer MoS2.;Krasheninnikov, Arkady/M-3020-2013;Krasheninnikov, Arkady/0000-0003-0074-7588;50;4;0;0;50;1098-0121;WOS:000312025700003;;;J;Ciuchi, S.;Fratini, S.;Electronic transport and quantum localization effects in organic;semiconductors;PHYSICAL REVIEW B;86;24;245201;10.1103/PhysRevB.86.245201;DEC 7 2012;2012;We explore the charge transport mechanism in organic semiconductors;based on a model that accounts for the thermal intermolecular disorder;at work in pure crystalline compounds, as well as extrinsic sources of;disorder that are present in current experimental devices. Starting from;the Kubo formula, we describe a theoretical framework that relates the;time-dependent quantum dynamics of electrons to the frequency-dependent;conductivity. The electron mobility is then calculated through a;relaxation time approximation that accounts for quantum localization;corrections beyond Boltzmann theory, and allows us to efficiently;address the interplay between highly conducting states in the band range;and localized states induced by disorder in the band tails. The;emergence of a "transient localization" phenomenon is shown to be a;general feature of organic semiconductors that is compatible with the;bandlike temperature dependence of the mobility observed in pure;compounds. Carrier trapping by extrinsic disorder causes a crossover to;a thermally activated behavior at low temperature, which is;progressively suppressed upon increasing the carrier concentration, as;is commonly observed in organic field-effect transistors. Our results;establish a direct connection between the localization of the electronic;states and their conductive properties, formalizing phenomenological;considerations that are commonly used in the literature.;Fratini, Simone/A-4692-2009;Fratini, Simone/0000-0002-4750-3241;4;0;0;0;4;1098-0121;WOS:000312025700001;;;J;Huang, Bing;Lee, Hoonkyung;Defect and impurity properties of hexagonal boron nitride: A;first-principles calculation;PHYSICAL REVIEW B;86;24;245406;10.1103/PhysRevB.86.245406;DEC 7 2012;2012;In this paper, we have systematically studied the structural and;electronic properties of vacancy defects and carbon impurity in;hexagonal boron nitride (h-BN) by using both normal GGA calculations and;advanced hybrid functional calculations. Our calculations show that the;defect configurations and the local bond lengths around defects are;sensitive to their charge states. The highest negative defect charge;states are largely determined by the nearly-free-electron state at the;conduction band minimum of BN. Generally, the in-gap defect levels;obtained from hybrid functional calculations are much deeper than those;obtained from normal GGA calculations. The formation energies of neutral;defects calculated by hybrid functional and GGA are close to each other,;but the defect transition energy levels are quite different between GGA;and hybrid functional calculations. Finally, we show that the charged;defect configurations as well as the transition energy levels exhibit;interesting layer effects.;Huang, Bing/D-8941-2011;Huang, Bing/0000-0001-6735-4637;8;0;0;0;8;1098-0121;WOS:000312025700002;;;J;Maassen, T.;Vera-Marun, I. J.;Guimaraes, M. H. D.;van Wees, B. J.;Contact-induced spin relaxation in Hanle spin precession measurements;PHYSICAL REVIEW B;86;23;235408;10.1103/PhysRevB.86.235408;DEC 7 2012;2012;In the field of spintronics the "conductivity mismatch" problem remains;an important issue. Here the difference between the resistance of;ferromagnetic electrodes and a (high resistive) transport channel causes;injected spins to be backscattered into the leads and to lose their spin;information. We study the effect of the resulting contact-induced spin;relaxation on spin transport, in particular on nonlocal Hanle precession;measurements. As the Hanle line shape is modified by the contact-induced;effects, the fits to Hanle curves can result in incorrectly determined;spin transport properties of the transport channel. We quantify this;effect that mimics a decrease of the spin relaxation time of the channel;reaching more than four orders of magnitude and a minor increase of the;diffusion coefficient by less than a factor of two. Then we compare the;results to spin transport measurements on graphene from the literature.;We further point out guidelines for a Hanle precession fitting procedure;that allows the reliable extraction of spin transport properties from;measurements.;Vera-Marun, Ivan/A-4704-2013; Guimaraes, Marcos/K-1940-2013;Vera-Marun, Ivan/0000-0002-6347-580X;;14;1;0;0;14;1098-0121;WOS:000312024900002;;;J;Murch, K. W.;Ginossar, E.;Weber, S. J.;Vijay, R.;Girvin, S. M.;Siddiqi, I.;Quantum state sensitivity of an autoresonant superconducting circuit;PHYSICAL REVIEW B;86;22;220503;10.1103/PhysRevB.86.220503;DEC 7 2012;2012;When a frequency chirped excitation is applied to a classical high-Q;nonlinear oscillator, its motion becomes dynamically synchronized to the;drive and large oscillation amplitude is observed, provided the drive;strength exceeds the critical threshold for autoresonance. We;demonstrate that when such an oscillator is strongly coupled to a;quantized superconducting qubit, both the effective nonlinearity and the;threshold become a nontrivial function of the qubit-oscillator detuning.;Moreover, the autoresonant threshold is dependent on the quantum state;of the qubit and may be used to realize a high-fidelity, latching;readout whose speed is not limited by the oscillator Q.;1;0;0;0;1;1098-0121;WOS:000312024300001;;;J;Ondrejkovic, P.;Kempa, M.;Vysochanskii, Y.;Saint-Gregoire, P.;Bourges, P.;Rushchanskii, K. Z.;Hlinka, J.;Neutron scattering study of ferroelectric Sn2P2S6 under pressure;PHYSICAL REVIEW B;86;22;224106;10.1103/PhysRevB.86.224106;DEC 7 2012;2012;Ferroelectric phase transition in the semiconductor Sn2P2S6 single;crystal has been studied by means of neutron scattering in the;pressure-temperature range adjacent to the anticipated tricritical;Lifshitz point (p approximate to 0.18 GPa, T approximate to 296 K). The;observations reveal a direct ferroelectric-paraelectric phase transition;in the whole investigated pressure range (0.18-0.6 GPa). These results;are in a clear disagreement with phase diagrams assumed in numerous;earlier works, according to which a hypothetical intermediate;incommensurate phase extends over several or even tens of degrees in the;0.5 GPa pressure range. Temperature dependence of the anisotropic;quasielastic diffuse scattering suggests that polarization fluctuations;present above T-C are strongly reduced in the ordered phase. Still, the;temperature dependence of the ((2) over bar 00) Bragg reflection;intensity at p = 0.18 GPa can be remarkably well modeled assuming the;order-parameter amplitude growth according to the power law with;logarithmic corrections predicted for a uniaxial ferroelectric;transition at the tricritical Lifshitz point.;Hlinka, Jiri/G-5985-2014; Ondrejkovic, Petr/G-6654-2014; Kempa, Martin/G-8830-2014;1;0;0;0;1;1098-0121;WOS:000312024300002;;;J;Svindrych, Z.;Janu, Z.;Kozlowski, A.;Honig, J. M.;Low-temperature magnetic anomaly in magnetite;PHYSICAL REVIEW B;86;21;214406;10.1103/PhysRevB.86.214406;DEC 7 2012;2012;We have studied experimentally the responses of high-quality single;crystals of stoichiometric synthetic magnetite to applied weak dc and ac;magnetic fields in the range of 6-60 K, far below the Verwey transition.;The results can be compared to so-called magnetic after effects (MAE);measurements, which are the most extensive magnetic measurements of;magnetite at these temperatures. We present a novel point of view on the;relaxation phenomena encountered at these temperatures-the;low-temperature anomaly, addressing the striking difference between the;results of conventional ac susceptibility measurements and those;accompanying MAE measurements, i.e., periodic excitations with strong;magnetic pulses. We also draw a connection between this anomaly and the;so-called glasslike transition, and discuss possible mechanisms;responsible for these effects.;janu, zdenek/G-9113-2014;0;0;0;0;0;1098-0121;WOS:000312023100001;;;J;Tarantini, C.;Lee, S.;Kametani, F.;Jiang, J.;Weiss, J. D.;Jaroszynski, J.;Folkman, C. M.;Hellstrom, E. E.;Eom, C. B.;Larbalestier, D. C.;Artificial and self-assembled vortex-pinning centers in superconducting;Ba(Fe1-xCox)(2)As-2 thin films as a route to obtaining very high;critical-current densities;PHYSICAL REVIEW B;86;21;214504;10.1103/PhysRevB.86.214504;DEC 7 2012;2012;We report on the superior vortex pinning of single-and multilayer;Ba(Fe1-xCox)(2)As-2 thin films with self-assembled c-axis and;artificially introduced ab-plane pins. Ba(Fe1-xCox)(2)As-2 can accept a;very high density of pins (15-20 vol %) without T-c suppression. The;matching field is greater than 12 T, producing a significant enhancement;of the critical current density J(c), an almost isotropic J(c) (theta,;20 T) > 10(5) A/cm(2), and global pinning force density F-p of similar;to 50 GN/m(3). This scenario strongly differs from the high-temperature;superconducting cuprates where the addition of pins without Tc;suppression is limited to 2-4 vol %, leading to small H-Irr enhancements;and improved J(c) only below 3-5 T.;Lee, Sanghan/C-8876-2012; Eom, Chang-Beom/I-5567-2014;7;2;0;0;7;1098-0121;WOS:000312023100002;;;J;Xia, Junchao;Carter, Emily A.;Density-decomposed orbital-free density functional theory for covalently;bonded molecules and materials;PHYSICAL REVIEW B;86;23;235109;10.1103/PhysRevB.86.235109;DEC 7 2012;2012;We propose a density decomposition scheme using a Wang-Govind-Carter-;(WGC-) based kinetic energy density functional (KEDF) to accurately and;efficiently simulate various covalently bonded molecules and materials;within orbital-free (OF) density functional theory (DFT). By using a;local, density-dependent scale function, the total density is decomposed;into a highly localized density within covalent bond regions and a;flattened delocalized density, with the former described by semilocal;KEDFs and the latter treated by the WGC KEDF. The new model predicts;reasonable equilibrium volumes, bulk moduli, and phase-ordering energies;for various semiconductors compared to Kohn-Sham (KS) DFT benchmarks.;The decomposition formalism greatly improves numerical stability and;accuracy, while retaining computational speed compared to simply;applying the original WGC KEDF to covalent materials. The surface energy;of Si(100) and various diatomic molecule properties can be stably;calculated and also agree well with KSDFT benchmarks. This;linear-scaled, computationally efficient, density-partitioned,;multi-KEDF scheme opens the door to large-scale simulations of;molecules, semiconductors, and insulators with OFDFT.;7;0;0;0;7;1098-0121;WOS:000312024900001;;;J;Zhao, Yang;Gong, Shou-Shu;Wang, Yong-Jun;Su, Gang;Low-energy effective theory and two distinct critical phases in a;spin-1/2 frustrated three-leg spin tube;PHYSICAL REVIEW B;86;22;224406;10.1103/PhysRevB.86.224406;DEC 7 2012;2012;Motivated by the crystal structures of [(CuCl(2)tachH)(3)Cl]Cl-2 and;Ca3Co2O6, we develop a low-energy effective theory using the;bosonization technique for a spin-1/2 frustrated three-leg spin tube;with trigonal prism units in two limit cases. The features obtained with;the effective theory are numerically elucidated by the density matrix;renormalization group method. Three different quantum phases in the;ground state of the system, say, one gapped dimerized phase and two;distinct gapless phases, are identified, where the two gapless phases;are found to have the conformal central charge c = 1 and 3/2,;respectively. Spin gaps, spin and dimer correlation functions, and the;entanglement entropy are obtained. In particular, it is disclosed that;the critical phase with c = 3/2 is the consequence of spin frustrations,;which might belong to the SU(2)(k=2) Wess-Zumino-Witten-Novikov;universality class, and is induced by the twist term in the bosonized;Hamiltonian density.;Su, Gang/G-6092-2011;Su, Gang/0000-0002-8149-4342;1;1;0;0;1;1098-0121;WOS:000312024300003;;;J;Vucicevic, J.;Goerbig, M. O.;Milovanovic, M. V.;d-wave superconductivity on the honeycomb bilayer;PHYSICAL REVIEW B;86;21;214505;10.1103/PhysRevB.86.214505;DEC 7 2012;2012;We introduce a microscopic model on the honeycomb bilayer, which in the;small-momentum limit captures the usual (quadratic dispersion in the;kinetic term) description of bilayer graphene. In the limit of strong;interlayer hopping it reduces to an effective honeycomb monolayer model;with also third-neighbor hopping. We study interaction effects in this;effective model, focusing on possible superconducting instabilities. We;find d(x2-y2) superconductivity in the strong-coupling limit of an;effective tJ -model-like description that gradually transforms into d +;id time-reversal symmetry-breaking superconductivity at weak couplings.;In this limit the small-momentum order-parameter expansion is (k(x) +;ik(y) )(2) [or (k(x) + ik(y) )(2)] in both valleys of the effective;low-energy description. The relevance of our model and investigation for;the physics of bilayer graphene is also discussed.;5;0;0;0;5;1098-0121;WOS:000312023100004;;;J;Etzioni, Yoav;Horovitz, Baruch;Le Doussal, Pierre;Rings and Coulomb boxes in dissipative environments;PHYSICAL REVIEW B;86;23;235406;10.1103/PhysRevB.86.235406;DEC 6 2012;2012;We study a particle on a ring in the presence of a dissipative;Caldeira-Leggett environment and derive its response to a dc field. We;show how this non-equilibrium response is related to a flux averaged;equilibrium response. We find, through a two-loop renormalization group;analysis, that a large dissipation parameter eta flows to a fixed point;eta(R) = (h) over bar/(2 pi). We also reexamine the mapping of this;problem to that of the Coulomb box and show that the relaxation;resistance, of recent interest, is quantized for large eta. For finite;eta > eta(R) we find that a certain average of the relaxation resistance;is quantized. We propose a Coulomb-box experiment to measure a quantized;noise. DOI: 10.1103/PhysRevB.86.235406;1;0;0;0;1;1098-0121;WOS:000312024600004;;;J;Fontana, Yannik;Grzela, Grzegorz;Bakkers, Erik P. A. M.;Rivas, Jaime Gomez;Mapping the directional emission of quasi-two-dimensional photonic;crystals of semiconductor nanowires using Fourier microscopy;PHYSICAL REVIEW B;86;24;245303;10.1103/PhysRevB.86.245303;DEC 6 2012;2012;Controlling the dispersion and directionality of the emission of;nanosources is one of the major goals of nanophotonics research. This;control will allow the development of highly efficient nanosources even;at the single-photon level. One of the ways to achieve this goal is to;couple the emission to Bloch modes of periodic structures. Here, we;present the first measurements of the directional emission from nanowire;photonic crystals by using Fourier microscopy. With this technique, we;efficiently collect and resolve the directional emission of nanowires;within the numerical aperture of a microscope objective. The light;emission from a heterostructure grown in each nanowire is governed by;the photonic (Bloch) modes of the photonic crystal. We also demonstrate;that the directionality of the emission can be easily controlled by;infiltrating the photonic crystal with a high refractive index liquid.;This work opens new possibilities for the control of the emission of;sources in nanowires.;5;0;0;0;5;1098-0121;WOS:000312025300005;;;J;Fujimori, Shin-ichi;Ohkochi, Takuo;Okane, Tetsuo;Saitoh, Yuji;Fujimori, Atsushi;Yamagami, Hiroshi;Haga, Yoshinori;Yamamoto, Etsuji;Onuki, Yoshichika;Itinerant nature of U 5f states in uranium mononitride revealed by;angle-resolved photoelectron spectroscopy;PHYSICAL REVIEW B;86;23;235108;10.1103/PhysRevB.86.235108;DEC 6 2012;2012;The electronic structure of the antiferromagnet uranium nitride (UN) has;been studied by angle-resolved photoelectron spectroscopy (ARPES) using;soft x-rays (h nu = 420-520 eV). Strongly dispersive bands with large;contributions from the U 5f states were observed in ARPES spectra and;form Fermi surfaces. The band structure as well as the Fermi surfaces in;the paramagnetic phase are well explained by the band-structure;calculation treating all the U 5f electrons as being itinerant,;suggesting that an itinerant description of the U 5f states is;appropriate for this compound. On the other hand, changes in the;spectral function due to the antiferromagnetic transition were very;small. The shapes of the Fermi surfaces in a paramagnetic phase are;highly three-dimensional, and the nesting of Fermi surfaces is unlikely;as the origin of the magnetic ordering. DOI: 10.1103/PhysRevB.86.235108;2;0;0;0;2;1098-0121;WOS:000312024600002;;;J;Hosseini, Mir Vahid;Zareyan, Malek;Unconventional superconducting states of interlayer pairing in bilayer;and trilayer graphene;PHYSICAL REVIEW B;86;21;214503;10.1103/PhysRevB.86.214503;DEC 6 2012;2012;We develop a theory for interlayer pairing of chiral electrons in;graphene materials which results in an unconventional superconducting;state with an s-wave spin-triplet order parameter. In a pure bilayer;graphene, this superconductivity exhibits a gapless property with an;exotic effect of temperature-induced condensation causing an increase of;the pairing amplitude with increasing temperature. We find that a finite;doping opens a gap in the excitation spectrum and weakens this anomalous;temperature dependence. We further explore the possibility of realizing;a variety of pairing patterns with different topologies of the Fermi;surface, by tuning the difference in the doping of the two layers. In;trilayer graphene, the interlayer superconductivity is characterized by;a two-component order parameter which can be used to define two distinct;phases in which only one of the components is nonvanishing. For ABA;stacking the stable state is determined by a competition between these;two phases. On variation of the relative amplitude of the corresponding;coupling strength, a first-order phase transition can occur between;these two phases. For ABC stacking, we find that the two phases coexist;with the possibility of a similar phase transition, which turns out to;be second order. DOI: 10.1103/PhysRevB.86.214503;1;0;0;0;1;1098-0121;WOS:000312022700003;;;J;Kajihara, Y.;Inui, M.;Matsuda, K.;Nagao, T.;Ohara, K.;Density fluctuations at the continuous liquid-liquid phase transition in;chalcogen systems;PHYSICAL REVIEW B;86;21;214202;10.1103/PhysRevB.86.214202;DEC 6 2012;2012;We have carried out density and small-angle x-ray scattering;measurements on a typical liquid chalcogen (Te, Se) system to;investigate its continuous liquid-liquid phase transition. With;increasing temperature, the zero-wave-number structure factor S(0) shows;a maximum in the middle of the transition region where the density;exhibits negative thermal expansion. This is direct evidence of density;fluctuations induced by the liquid-liquid phase transition. When the;sample is pressurized to 100 MPa, the density and S(0) curves shift to;the lower temperature side, which is consistent with the shift of the;structural transition. We discuss the similarity between liquid Te and;liquid water from the viewpoint of fluctuations induced by the;liquid-liquid transition. DOI: 10.1103/PhysRevB.86.214202;1;0;0;0;1;1098-0121;WOS:000312022700001;;;J;Khuntia, P.;Strydom, A. M.;Wu, L. S.;Aronson, M. C.;Steglich, F.;Baenitz, M.;Field-tuned critical fluctuations in YFe2Al10: Evidence from;magnetization, Al-27 NMR, and NQR investigations;PHYSICAL REVIEW B;86;22;220401;10.1103/PhysRevB.86.220401;DEC 6 2012;2012;We report magnetization, specific heat, and NMR investigations on;YFe2Al10 over a wide range of temperature and magnetic field and zero;field (NQR) measurements. Magnetic susceptibility, specific heat, and;spin-lattice relaxation rate divided by T (1/T1T) follow a weak power;law (similar to T-0.4) temperature dependence, which is a signature of;the critical fluctuations of Fe moments. The value of the;Sommerfeld-Wilson ratio and the linear relation between 1/T1T and.;suggest the existence of ferromagnetic correlations in this system. No;magnetic ordering down to 50 mK in C-p(T)/T and the unusual T and H;scaling of the bulk and NMR data are associated with a magnetic;instability which drives the system to quantum criticality. The magnetic;properties of the system are tuned by field wherein ferromagnetic;fluctuations are suppressed and a crossover from quantum critical to;Fermi-liquid behavior is observed with increasing magnetic field.;Khuntia, Panchanan /E-4270-2010;5;1;0;0;5;1098-0121;WOS:000312023600001;;;J;Marsh, J.;Camley, R. E.;Two-wave mixing in nonlinear magnetization dynamics: A perturbation;expansion of the Landau-Lifshitz-Gilbert equation;PHYSICAL REVIEW B;86;22;224405;10.1103/PhysRevB.86.224405;DEC 6 2012;2012;Recent experiments have shown that two electromagnetic waves can be;mixed together by a nonlinear process in magnetic materials and can;produce a wide variety of output waves, each with a different frequency.;A perturbation expansion of the Landau-Lifschitz-Gilbert equation is;presented which provides qualitative and quantitative understanding of;this process. The results of this expansion are compared to both;experiment and direct numerical solutions.;1;0;0;0;1;1098-0121;WOS:000312023600004;;;J;Norris, Scott A.;Stress-induced patterns in ion-irradiated silicon: Model based on;anisotropic plastic flow;PHYSICAL REVIEW B;86;23;235405;10.1103/PhysRevB.86.235405;DEC 6 2012;2012;We present a model for the effect of stress on thin amorphous films that;develop atop ion-irradiated silicon, based on the mechanism of;ion-induced anisotropic plastic flow. Using only parameters directly;measured or known to high accuracy, the model exhibits remarkably good;agreement with the wavelengths of experimentally observed patterns and;agrees qualitatively with limited data on ripple propagation speed. The;predictions of the model are discussed in the context of other;mechanisms recently theorized to explain the wavelengths, including;extensive comparison with an alternate model of stress. DOI:;10.1103/PhysRevB.86.235405;14;0;0;0;14;1098-0121;WOS:000312024600003;;;J;Ostlin, A.;Chioncel, L.;Vitos, L.;One-particle spectral function and analytic continuation for many-body;implementation in the exact muffin-tin orbitals method;PHYSICAL REVIEW B;86;23;235107;10.1103/PhysRevB.86.235107;DEC 6 2012;2012;We investigate one of the most common analytic continuation techniques;in condensed matter physics, namely the Pade approximant. Aspects;concerning its implementation in the exact muffin-tin orbitals (EMTO);method are scrutinized with special regard towards making it stable and;free of artificial defects. The electronic structure calculations are;performed for solid hydrogen, and the performance of the analytical;continuation is assessed by monitoring the density of states constructed;directly and via the Pade approximation. We discuss the difference;between the k-integrated and k-resolved analytical continuations, as;well as describing the use of random numbers and pole residues to;analyze the approximant. It is found that the analytic properties of the;approximant can be controlled by appropriate modifications, making it a;robust and reliable tool for electronic structure calculations. At the;end, we propose a route to perform analytical continuation for the;EMTO+dynamical mean field theory method. DOI: 10.1103/PhysRevB.86.235107;0;0;0;0;0;1098-0121;WOS:000312024600001;;;J;Rauch, D.;Suellow, S.;Bleckmann, M.;Klemke, B.;Kiefer, K.;Kim, M. S.;Aronson, M. C.;Bauer, E.;Magnetic phase diagram of CePt3B1-xSix;PHYSICAL REVIEW B;86;24;245104;10.1103/PhysRevB.86.245104;DEC 6 2012;2012;We present a study of the main bulk properties (susceptibility,;magnetization, resistivity, and specific heat) of CePt3B1-xSix, an;alloying system that crystallizes in a noncentrosymmetric lattice, and;derive the magnetic phase diagram. The materials at the end point of the;alloying series have previously been studied, with CePt3B established as;a material with two different magnetic phases at low temperatures;(antiferromagnetic below T-N = 7.8 K, weakly ferromagnetic below T-C;approximate to 5 K), while CePt3Si is a heavy fermion superconductor;(T-c = 0.75 K) coexisting with antiferromagnetism (T-N = 2.2 K). From;our experiments we conclude that the magnetic phase diagram is divided;into two regions. In the region of low Si content (up to x similar to;0.7) the material properties resemble those of CePt3B. Upon increasing;the Si concentration further the magnetic ground state continuously;transforms into that of CePt3Si. In essence, we argue that CePt3B can be;understood as a low pressure variant of CePt3Si.;Kiefer, Klaus/J-3544-2013; Klemke, Bastian/J-4746-2013;Kiefer, Klaus/0000-0002-5178-0495; Klemke, Bastian/0000-0003-4560-6025;0;0;0;0;0;1098-0121;WOS:000312025300004;;;J;Schoenecker, Stephan;Richter, Manuel;Koepernik, Klaus;Eschrig, Helmut;Ferromagnetic elements by epitaxial growth: A density functional;prediction (vol 85, 024407, 2012);PHYSICAL REVIEW B;86;21;219901;10.1103/PhysRevB.86.219901;DEC 6 2012;2012;0;0;0;0;0;1098-0121;WOS:000312022700004;;;J;Sedlmeier, Katrin;Elsaesser, Sebastian;Neubauer, David;Beyer, Rebecca;Wu, Dan;Ivek, Tomislav;Tomic, Silvia;Schlueter, John A.;Dressel, Martin;Absence of charge order in the dimerized kappa-phase BEDT-TTF salts;PHYSICAL REVIEW B;86;24;245103;10.1103/PhysRevB.86.245103;DEC 6 2012;2012;Utilizing infrared vibrational spectroscopy we have investigated;dimerized two-dimensional organic salts in order to search for possible;charge redistribution that might constitute electronic dipoles and;ferroelectricity: the quantum spin liquid kappa-(BEDT-TTF)(2)Cu-2(CN)(3);[BEDT-TTF: bis-(ethylenedithio)tetrathiafulvalene], the;antiferromagnetic Mott insulator kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Cl, and;the superconductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br. None of them;exhibit any indication of charge disproportionation. Upon cooling to low;temperatures all BEDT-TTF molecules remain homogeneously charged within;+/- 0.005e. No modification in the charge distribution is observed;around T = 6 K where a low-temperature anomaly has been reported for the;spin-liquid material kappa-(BEDT-TTF)(2)Cu-2(CN)(3). In this compound;the in-plane optical response and vibrational coupling are rather;anisotropic, indicating that the tilt of the BEDT-TTF molecules in c;direction and their coupling to the anion layers has to be considered in;the explanation of the electromagnetic properties.;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;14;0;0;0;14;1098-0121;WOS:000312025300003;;;J;Siloi, I.;Troiani, F.;Towards the chemical tuning of entanglement in molecular nanomagnets;PHYSICAL REVIEW B;86;22;224404;10.1103/PhysRevB.86.224404;DEC 6 2012;2012;Antiferromagnetic spin rings represent prototypical realizations of;highly correlated, low-dimensional systems. Here we theoretically show;how the introduction of magnetic defects by controlled chemical;substitutions results in a strong spatial modulation of spin-pair;entanglement within each ring. Entanglement between local degrees of;freedom (individual spins) and collective ones (total ring spins) are;shown to coexist in exchange-coupled ring dimers, as can be deduced from;general symmetry arguments. We verify the persistence of these features;at finite temperatures, and discuss them in terms of experimentally;accessible observables.;Troiani, Filippo/B-4787-2011;5;0;0;0;5;1098-0121;WOS:000312023600003;;;J;Sreenivasulu, G.;Petrov, V. M.;Fetisov, L. Y.;Fetisov, Y. K.;Srinivasan, G.;Magnetoelectric interactions in layered composites of piezoelectric;quartz and magnetostrictive alloys;PHYSICAL REVIEW B;86;21;214405;10.1103/PhysRevB.86.214405;DEC 6 2012;2012;Mechanical strain mediated magnetoelectric effects are studied in;bilayers and trilayers of piezoelectric quartz and magnetostrictive;permendur (P), an alloy of Fe-Co-V. It is shown that the magnetoelectric;voltage coefficient (MEVC), proportional to the ratio of the;piezoelectric coupling coefficient to the permittivity, is higher in;quartz-based composites than for traditional ferroelectrics-based ME;composites. In bilayers of X-cut single crystal quartz and permendur,;the MEVC varies from 1.5 V/cm Oe at 20 Hz to similar to 185 V/cm Oe at;bending resonance or electromechanical resonance corresponding to;longitudinal acoustic modes. In symmetric X-cut quartz-P trilayers, the;MEVC similar to 4.8 V/cm Oe at 20 Hz and similar to 175 V/cm Oe at;longitudinal acoustic resonance. Trilayers of Y-cut quartz and permendur;show ME coupling under a shear strain with an MEVC that is an order of;magnitude smaller than for longitudinal strain in samples with X-cut;quartz. A model for low-frequency and resonance ME effects which allows;for explicit expressions of MEVC and resonance frequencies is provided;and calculated. MEVCs are in general agreement with measured values.;Magnetoelectric composites with quartz have the desired characteristics;such as the absence of ferroelectric hysteresis and pyroelectric losses;and could potentially replace ferroelectrics in composite-based magnetic;sensors, transducers, and high-frequency devices. DOI:;10.1103/PhysRevB.86.214405;Gollapudi, Sreenivasulu/G-9832-2012;Gollapudi, Sreenivasulu/0000-0002-6136-7119;8;0;0;0;8;1098-0121;WOS:000312022700002;;;J;Syzranov, S. V.;Yevtushenko, O. M.;Efetov, K. B.;Fermionic and bosonic ac conductivities at strong disorder;PHYSICAL REVIEW B;86;24;241102;10.1103/PhysRevB.86.241102;DEC 6 2012;2012;We study the ac conduction in a system of fermions or bosons strongly;localized in a disordered array of sites with short-range interactions;at frequencies larger than the intersite tunneling but smaller than the;characteristic fluctuation of the on-site energy. While the main;contribution sigma(0)(omega) to the conductivity comes from local;dipole-type excitations on close pairs of sites, coherent processes on;three or more sites lead to an interference correction sigma(1)(omega),;which depends on the statistics of the charge carriers and can be;suppressed by a magnetic field. For bosons the correction is always;positive, while for fermions it can be positive or negative depending on;whether the conduction is dominated by effective single-particle or;single-hole processes. We calculate the conductivity explicitly assuming;a constant density of states of single-site excitations. Independently;of the statistics, sigma(0)(omega) = const. For bosons, sigma(1)(omega);proportional to log(C/omega). For fermions, sigma(1)(omega) proportional;to log[max(A,omega)/omega] - log[max(B,omega)/omega], where the first;and the second term are, respectively, the particle and hole;contributions, A and B being the particle and hole energy cutoffs. The;ac magnetoresistance has the same sign as sigma(1)(omega).;Efetov, Konstantin/H-8852-2013;0;0;0;0;0;1098-0121;WOS:000312025300001;;;J;Troeppner, C.;Schmitt, T.;Reuschl, M.;Hammer, L.;Schneider, M. A.;Mittendorfer, F.;Redinger, J.;Podloucky, R.;Weinert, M.;Incommensurate Moire overlayer with strong local binding: CoO(111);bilayer on Ir(100);PHYSICAL REVIEW B;86;23;235407;10.1103/PhysRevB.86.235407;DEC 6 2012;2012;Incommensurate relaxed overlayer Moire structures are often interpreted;as systems with weak lateral variations of the binding potential and;thus no structural modulations in the overlayer material. We discuss;here the example of a CoO(111) bilayer on Ir(100), which is a relaxed;overlayer with strong structural response to the lateral modulation of;interface properties but nevertheless is incommensurate. By means of;density functional theory (DFT) calculations, we quantitatively;reproduce all the structural parameters of the CoO(111) bilayer on;Ir(100) as proposed by a recent low-energy electron diffraction analysis;[Ebensperger et al., Phys. Rev. B 81, 235405 (2010)]. The calculations;predict energetic degeneracies with respect to registry shifts of the;CoO(111) film along [01 (1) over bar]. Large-scale, low-temperature;scanning tunneling microscopy topographies reveal that the true;structure of the film is incommensurate in this direction, exhibiting a;one-dimensional Moire pattern with a period of about 9.4 a(Ir). From DFT;calculations for limiting (periodic) models, we can sample the potential;landscape of the cobalt and oxygen atoms in the Moire structure across;the Ir(100) unit cell. We find that despite the non-commensurability of;the film, the binding to the substrate is site specific with strong;attraction and repulsion points for both cobalt and oxygen atoms,;leading to severe local distortions in the film. The lateral modulation;of the structural elements within the oxide film can be understood as a;combination of the lateral variation in the Co-Ir binding potential and;additional O-Ir binding. DOI: 10.1103/PhysRevB.86.235407;Schneider, M. Alexander/C-6241-2013; Hammer, Lutz/D-9863-2013; Schneider, M. Alexander/B-4444-2012; Mittendorfer, Florian/L-5929-2013;Schneider, M. Alexander/0000-0002-8607-3301;;3;0;0;0;3;1098-0121;WOS:000312024600005;;;J;Tyunina, M.;Dejneka, A.;Chvostova, D.;Levoska, J.;Plekh, M.;Jastrabik, L.;Phase transitions in ferroelectric Pb0.5Sr0.5TiO3 films probed by;spectroscopic ellipsometry;PHYSICAL REVIEW B;86;22;224105;10.1103/PhysRevB.86.224105;DEC 6 2012;2012;Phase transitions occurring in 130-nm-thick films of;perovskite-structure ferroelectric Pb0.5Sr0.5TiO3 are experimentally;studied by combining spectroscopic ellipsometry and low-frequency;dielectric analysis. Polycrystalline and polydomain epitaxial films with;relaxed misfit strain and columnar microstructure are investigated. The;paraelectric and the ferroelectric states, and the temperatures and;widths of the paraelectric-to-ferroelectric phase transitions, are;identified from the temperature evolution of refractive index measured;in transparency range. The temperatures at which transitions start on;cooling are found to be considerably higher than the temperatures of the;dielectric peaks. In contrast to the broad dielectric peaks, the;transition width of 60 K in the polycrystalline film and that of 20 K in;the polydomain epitaxial film are revealed. The discrepancies between;optical and dielectric data are explained by the influence of extrinsic;factors on the low-frequency response of the thin-film capacitors. It is;suggested that fundamental mechanisms of ferroelectric phase transitions;in thin films can be revealed by studies of thermo-optical properties.;Dejneka, Alexandr/G-6384-2014; Jastrabik, Lubomir /H-1217-2014; Chvostova, Dagmar/G-9360-2014;6;0;0;0;6;1098-0121;WOS:000312023600002;;;J;Zeng, Hualing;Zhu, Bairen;Liu, Kai;Fan, Jiahe;Cui, Xiaodong;Zhang, Q. M.;Low-frequency Raman modes and electronic excitations in atomically thin;MoS2 films;PHYSICAL REVIEW B;86;24;241301;10.1103/PhysRevB.86.241301;DEC 6 2012;2012;Atomically thin MoS2 crystals have been recognized as;quasi-two-dimensional semiconductors with remarkable physical;properties. We report our Raman scattering measurements on multilayer;and monolayer MoS2, especially in the low-frequency range (<50 cm(-1)).;We find two low-frequency Raman modes with a contrasting thickness;dependence. When increasing the number of MoS2 layers, one mode shows a;significant increase in frequency while the other decreases following a;1/N (N denotes the number of unit layers) trend. With the aid of;first-principles calculations we assign the former as the shear mode;E-2g(2). The latter is distinguished as the compression vibrational;mode, similar to the surface vibration of other epitaxial thin films.;The opposite evolution of the two modes with thickness demonstrates;vibrational modes in an atomically thin crystal as well as a more;precise way to characterize the thickness of atomically thin MoS2 films.;In addition, we observe a broad feature around 38 cm(-1) (5 meV) which;is visible only under near-resonance excitation and pinned at a fixed;energy, independent of thickness. We interpret the feature as an;electronic Raman scattering associated with the spin-orbit coupling;induced splitting in a conduction band at K points in their Brillouin;zone.;Liu, Kai/K-4157-2012; Cui, Xiaodong/C-2023-2009; Zeng, Hualing/J-4411-2014;Cui, Xiaodong/0000-0002-2013-8336;;19;1;0;0;19;1098-0121;WOS:000312025300002;;;J;Anand, V. K.;Johnston, D. C.;Observation of a phase transition at 55 K in single-crystal CaCu1.7As2;PHYSICAL REVIEW B;86;21;214501;10.1103/PhysRevB.86.214501;DEC 5 2012;2012;We present the structural, magnetic, thermal and ab-plane electronic;transport properties of single crystals of CaCu1.7As2 grown by the;self-flux technique that were investigated by powder x-ray diffraction,;magnetic susceptibility chi, isothermal magnetization M, specific heat;C-p, and electrical resistivity rho measurements as a function of;temperature T and magnetic field H. X-ray diffraction analysis of;crushed crystals at room temperature confirm the collapsed tetragonal;ThCr2Si2-type structure with similar to 15% vacancies on the Cu sites as;previously reported, corresponding to the composition CaCu1.7As2. The;chi(T) data are diamagnetic, anisotropic, and nearly independent of T.;The chi is larger in the ab plane than along the c axis, as also;observed previously for SrCu2As2 and for pure and doped BaFe2As2. The;C-p(T) and rho(T) data indicate metallic sp-band character. In contrast;to the rho(T) and C-p(T) data that do not show any evidence for phase;transitions below 300 K, the rho(T) data exhibit a sharp decrease on;cooling below a temperature T-t = 54-56 K, depending on the crystal. The;chi(T) data show no hysteresis on warming and cooling through T-t and;the transition thus appears to be second order. The phase transition may;arise from spatial ordering of the vacancies on the Cu sublattice. The;T-t is found to be independent of H for H <= 8 T. A positive;magnetoresistance is observed below T-t that increases with decreasing T;and attains a value in H = 8.0 T of 8.7% at T = 1.8 K.;Anand, Vivek Kumar/J-3381-2013;Anand, Vivek Kumar/0000-0003-2023-7040;5;0;0;0;5;1098-0121;WOS:000311910400003;;;J;Avetisyan, Siranush;Pietilaeinen, Pekka;Chakraborty, Tapash;Strong enhancement of Rashba spin-orbit coupling with increasing;anisotropy in the Fock-Darwin states of a quantum dot (vol 85, 153301,;2012);PHYSICAL REVIEW B;86;23;239901;10.1103/PhysRevB.86.239901;DEC 5 2012;2012;1;0;0;0;1;1098-0121;WOS:000311911500005;;;J;Berman, Oleg L.;Kezerashvili, Roman Ya.;Ziegler, Klaus;Superfluidity and collective properties of excitonic polaritons in;gapped graphene in a microcavity;PHYSICAL REVIEW B;86;23;235404;10.1103/PhysRevB.86.235404;DEC 5 2012;2012;We predict the formation and superfluidity of polaritons in an optical;microcavity formed by excitons in gapped graphene embedded there and;microcavity photons. The Rabi splitting related to the creation of an;exciton in a graphene layer in the presence of the band gap is obtained.;It is demonstrated that the Rabi splitting decreases when the energy gap;increases, while the larger value of the dielectric constant of the;microcavity gives a smaller value for the Rabi splitting. The analysis;of collective excitations as well as the sound velocity is presented. We;show that the superfluid density n(s) and temperature of the;Kosterlitz-Thouless phase transition T-c are decreasing functions of the;energy gap.;2;0;0;0;2;1098-0121;WOS:000311911500004;;;J;Bernu, S.;Fertey, P.;Itie, J. -P.;Berger, H.;Foury-Leylekian, P.;Pouget, J. -P.;Vanishing of the metal-insulator Peierls transition in pressurized BaVS3;PHYSICAL REVIEW B;86;23;235105;10.1103/PhysRevB.86.235105;DEC 5 2012;2012;BaVS3 presents a metal-to-insulator (MI) transition at ambient pressure;due to the stabilization of a 2k(F) commensurate charge density wave;(CDW) Peierls ground state built on the dz(2) V orbitals. The MI;transition vanishes under pressure at a quantum critical point (QCP);where the electronic properties exhibit a non-Fermi liquid behavior. In;this paper, we determine the CDW phase diagram under pressure and show;that it combines both the vanishing of the second-order Peierls;transition and a commensurate-incommensurate first-order delocking;transition of the 2k(F) wave vector. We explain quantitatively the drop;of the MI critical temperature by the decrease of the electron-hole pair;lifetime of the CDW condensate due to an enhancement of the;hybridization between the dz(2) and e(t(2g)) levels of the V under;pressure.;0;0;0;0;0;1098-0121;WOS:000311911500001;;;J;Bobaru, S.;Gaudry, E.;de Weerd, M. -C.;Ledieu, J.;Fournee, V.;Competing allotropes of Bi deposited on the Al13Co4(100) alloy surface;PHYSICAL REVIEW B;86;21;214201;10.1103/PhysRevB.86.214201;DEC 5 2012;2012;The growth and stability of Bi thin films on the Al13Co4(100) surface;has been investigated from the submonolayer to high-coverage regime by;scanning tunneling microscopy (STM) and low-energy electron diffraction;(LEED) for temperatures ranging from 57 to 633 K. Initially, Bi;adsorption leads to the formation of a pseudomorphic monolayer, followed;by the growth of islands of different heights with increasing coverage.;The in-plane structure, island height, and island morphology indicate;that these islands adopt either a pseudocubic (110) or hexagonal (111);orientation normal to the surface. The (110)-oriented islands correspond;to bilayer stacking (either two or four monolayers in height) while the;(111)-oriented islands correspond to either three-or four-layer;stacking. The in-plane orientation of (110) islands with respect to the;substrate is random, while (111) islands adopt one of four possible;orientations. In addition, the (111) islands show a moire structure. The;fact that Bi islands grow with either (110) or (111) orientation;simultaneously on the same substrate relates to a subtle energy balance;between both orientations according to ab initio calculations, allowing;both structures to coexist. The island density dependence versus both;deposition temperature and flux, their most frequent structure type,;reshaping effects, and chemical reactivity of the different allotropes;are also discussed in this paper.;Gaudry, Emilie/G-9682-2011; Ledieu, Julian/F-1430-2010;2;0;0;0;2;1098-0121;WOS:000311910400002;;;J;Czarnik, Piotr;Cincio, Lukasz;Dziarmaga, Jacek;Projected entangled pair states at finite temperature: Imaginary time;evolution with ancillas;PHYSICAL REVIEW B;86;24;245101;10.1103/PhysRevB.86.245101;DEC 5 2012;2012;A projected entangled pair state (PEPS) with ancillas is evolved in;imaginary time. This tensor network represents a thermal state of a;two-dimensional (2D) lattice quantum system. A finite-temperature phase;diagram of the 2D quantum Ising model in a transverse field is obtained;as a benchmark application.;2;0;0;0;2;1098-0121;WOS:000311912300002;;;J;de Jong, Maarten;Olmsted, David L.;van de Walle, Axel;Asta, Mark;First-principles study of the structural and elastic properties of;rhenium-based transition-metal alloys;PHYSICAL REVIEW B;86;22;224101;10.1103/PhysRevB.86.224101;DEC 5 2012;2012;Structural, energetic, and elastic properties of hexagonal-close-packed;rhenium-based transition-metal alloys are computed by density-functional;theory. The practical interest in these materials stems from the;attractive combination of mechanical properties displayed by rhenium for;structural applications requiring the combination of high melting;temperature and low-temperature ductility. Single-crystal elastic;constants, atomic volumes, axial c/a ratios, and dilute heats of;solution for Re-X alloys are computed, considering all possible;transition-metal solute species X. Calculated elastic constants are used;to compute values of a commonly considered intrinsic-ductility parameter;K/G, where K is the bulk modulus and G denotes the Voigt average of the;shear modulus, as well as the anisotropies in the Young's modulus and;shear modulus. The calculated properties show clear trends as a function;of d-band filling, which can be rationalized through tight-binding;theory. The results indicate that solutes to the left of rhenium in the;periodic table show a tendency to increase the intrinsic ductility;parameter, a trend that correlates with an increase of the c/a ratio;towards the ideal value associated optimal close packing. The Young's;modulus shows a trend towards increasing isotropy with alloying of;solutes X to the left of Re, while the shear modulus shows the opposite;trend but with an overall weaker dependence on solute additions. DOI:;10.1103/PhysRevB.86.224101;van de Walle, Axel/L-5676-2013;van de Walle, Axel/0000-0002-3415-1494;0;0;0;0;0;1098-0121;WOS:000311910900001;;;J;Fingerhut, Benjamin P.;Richter, Marten;Luo, Jun-Wei;Zunger, Alex;Mukamel, Shaul;Dissecting biexciton wave functions of self-assembled quantum dots by;double-quantum-coherence optical spectroscopy;PHYSICAL REVIEW B;86;23;235303;10.1103/PhysRevB.86.235303;DEC 5 2012;2012;Biexcitons feature prominently in various scenarios for utilization of;quantum dots (QDs) for enhancing the efficiencies of solar cells, and;for the generation of entangled photon pairs in single QD sources.;Two-dimensional double quantum coherence (2D-DQC) nonlinear optical;spectra provide novel spectroscopic signatures of such states beyond;global intensity and lifetime characteristics which are available by;more conventional techniques. We report the simulation of a prototype;2D-DQC optical experiment of a self-assembled InAs/GaAs dot. The;simulations consider the QD in different charged states and are based on;a state-of-the-art atomistic many-body pseudopotential method for the;calculation of the electronic structure and transition dipole matrix;elements. Comparison of the spectra of negatively charged, neutral, and;positively charged QD reveals optical signatures of their electronic;excitations. This technique directly accesses the biexciton (XX);energies as well as the projections of their wave functions on the;single-exciton manifold. These signals also provide a unique tool for;probing the charged state of the QD and thus the occupation of the;quantum state. Signatures of Pauli blockade of the creation of certain;single and two excitons due to charges on the particles are observed.;For all quantum states of the QD, the spectra reveal a strong;multiconfiguration character of the biexciton wave functions. Peak;intensities can be explained by interference of the contributing;Liouville space pathways.;Zunger, Alex/A-6733-2013; LUO, JUNWEI/B-6545-2013; LUO, JUN-WEI/A-8491-2010; Richter, Marten/B-7790-2008;Richter, Marten/0000-0003-4160-1008;2;0;0;0;2;1098-0121;WOS:000311911500003;;;J;Haskins, Justin B.;Moriarty, John A.;Hood, Randolph Q.;Polymorphism and melt in high-pressure tantalum;PHYSICAL REVIEW B;86;22;224104;10.1103/PhysRevB.86.224104;DEC 5 2012;2012;Recent small-cell (<150 atom) quantum molecular dynamics (QMD);simulations for Ta based on density functional theory (DFT) have;predicted a hexagonal omega (hex-omega)phase more stable than the normal;bcc phase at high temperature (T) and pressure (P) above 70 GPa [;Burakovsky et al., Phys. Rev. Lett. 104, 255702 (2010)]. Here we examine;possible high-T, P polymorphism in Ta with complementary DFT-based model;generalized pseudopotential theory (MGPT) multi-ion interatomic;potentials, which allow accurate treatment of much larger system sizes;(up to similar to 80000 atoms). We focus on candidate bcc, A15, fcc,;hcp, and hex-omega phases for the high-T, P phase diagram to 420 GPa,;studying the mechanical and relative thermodynamic stability of these;phases for both small and large computational cells. Our MGPT potentials;fully capture the T = 0 DFT energetics of these phases, while MGPT-MD;simulations demonstrate that the higher-energy fcc, hcp, and hex-omega;structures are only mechanically stabilized at high temperature by;large, size-dependent, anharmonic vibrational effects, with the;stability of the hex-omega phase also being found to be a sensitive;function of its c/a ratio. Both two-phase and Z-method melting;techniques have been used in MGPT-MD simulations to determine relative;phase stability and its size dependence. In the large-cell limit, the;two-phase method yields accurate equilibrium melt curves for all five;phases, with bcc producing the highest melt temperatures at all;pressures and hence being the most stable phase of those considered. The;two-phase bcc melt curve is also in good agreement with dynamic;experimental data as well as with the MGPT melt curve calculated from;bcc and liquid free energies. In contrast, we find that the Z method;produces only an upper bound to the equilibrium melt curve in the;large-cell limit. For the bcc and hex-omega structures, however, this is;a close upper bound within 5% of the two-phase results, although for the;A15, fcc, and hcp structures, the Z-melt curves are 25%-35% higher in;temperature than the two-phase results. Nonetheless, the Z method has;allowed us to study melt size effects in detail. We find these effects;to be either small or modest for the cubic bcc, A15, and fcc structures,;but to have a large impact on the hexagonal hcp and hex-omega melt;curves, which are dramatically pushed above that of bcc for simulation;cells less than 150 atoms. The melt size effects are driven by and;closely correlated with similar size effects on the mechanical stability;and the vibrational anharmonicity. We further show that for the same;simulation cell sizes and choice of c/a ratio, the MGPT-MD bcc and;hex-omega melt curves are in good agreement with the QMD results, so the;QMD prediction is confirmed in the small-cell limit. But in the;large-cell limit, the MGPT-MD hex-omega melt curve is always lowered;below that of bcc for any choice of c/a, so bcc is the most stable;phase. We conclude that for the non-bcc Ta phases studied, one requires;simulation cells of at least 250-500 atoms to be free of size effects;impacting mechanical and thermodynamic phase stability. DOI:;10.1103/PhysRevB.86.224104;8;0;0;0;8;1098-0121;WOS:000311910900004;;;J;Iwazaki, Yoshiki;Suzuki, Toshimasa;Mizuno, Youichi;Tsuneyuki, Shinji;Doping-induced phase transitions in ferroelectric BaTiO3 from;first-principles calculations;PHYSICAL REVIEW B;86;21;214103;10.1103/PhysRevB.86.214103;DEC 5 2012;2012;Carrier-electron-induced phase transition from tetragonal to cubic;phases in BaTiO3 is studied using first-principles calculation. Our;results show that the disappearance of the ferroelectric phase is an;intrinsic effect resulting from carrier electron doping in BaTiO3. We;further clarify that the lattice disorder induced by donor dopants such;as oxygen vacancies and substitutionally doped Nb5+ at Ti4+ sites;accelerates the disappearance of the tetragonal phase in BaTiO3.;7;0;0;0;7;1098-0121;WOS:000311910400001;;;J;Koshelev, A. E.;Phase diagram of Josephson junction between s and s(+/-) superconductors;in the dirty limit;PHYSICAL REVIEW B;86;21;214502;10.1103/PhysRevB.86.214502;DEC 5 2012;2012;The s(+/-) state in which the order parameter has different signs in;different bands is a leading candidate for the superconducting state in;the iron-based superconductors. We investigate a Josephson junction;between s and s(+/-) superconductors within microscopic theory.;Frustration, caused by interaction of the s-wave gap parameter with the;opposite-sign gaps of the s(+/-) superconductor, leads to nontrivial;phase diagram. When the partial Josephson coupling energy between the;s-wave superconductor and one of the s(+/-) bands dominates, s-wave gap;parameter aligns with the order parameter in this band. In this case,;the partial Josephson energies have different signs corresponding to;signs of the gap parameters. In the case of strong frustration,;corresponding to almost complete compensation of the total Josephson;energy, a nontrivial time-reversal-symmetry breaking (TRSB) state;realizes. In this state, all gap parameters become essentially complex.;As a consequence, this state provides realization for so-called;phi-junction with finite phase difference in the ground state. The width;of the TRSB state region is determined by the second harmonic in;Josephson current, proportional to sin(2 phi f), which appears in the;second order with respect to the boundary transparency. Using the;microscopic theory, we establish a range of parameters where different;states are realized. Our analysis shows insufficiency of the simple;phenomenological approach for treatment of this problem.;Koshelev, Alexei/K-3971-2013;Koshelev, Alexei/0000-0002-1167-5906;3;0;0;0;3;1098-0121;WOS:000311910400004;;;J;Krueger, Peter;Koutiri, Issam;Bourgeois, Sylvie;First-principles study of hexagonal tungsten trioxide: Nature of lattice;distortions and effect of potassium doping;PHYSICAL REVIEW B;86;22;224102;10.1103/PhysRevB.86.224102;DEC 5 2012;2012;A density functional theory study is reported on pure and potassium;doped tungsten trioxide. The nature of lattice distortions in the;hexagonal phase is analyzed and a new symmetry group is proposed. The;structure and stability of cubic, monoclinic, and hexagonal phases is;studied as a function of potassium doping and an approximate phase;diagram is derived. KxWO3 undergoes a monoclinic to hexagonal phase;transition at x similar to 3%. DOI: 10.1103/PhysRevB.86.224102;1;0;0;0;1;1098-0121;WOS:000311910900002;;;J;Landsgesell, S.;Abou-Ras, D.;Alber, D.;Prokes, K.;Wolf, T.;Direct evidence of chemical and crystallographic phase separation in;K0.65Fe1.74Se2;PHYSICAL REVIEW B;86;22;224502;10.1103/PhysRevB.86.224502;DEC 5 2012;2012;In the present work, we report on a chemical phase separation in;crystalline superconducting K0.65Fe1.74Se2, investigated by means of;magnetization experiments, scanning electron microscopy, electron;backscatter diffraction, and energy-dispersive x-ray spectrometry. It is;shown that the crystal consists of platelets oriented in < 100 > with an;approximated volume fraction of about 30% in the surrounding < 001 >;oriented matrix. The platelets (the matrix) are depleted in K (Fe) and;enriched in Fe (K). Chemical phase separation is demonstrated by a;stable, antiferromagnetic K0.8Fe1.6Se2 matrix, and KxFe2-y Se-2;platelets inducing superconductivity. This time-driven, chemical phase;separation is therefore responsible for various coexistent magnetic and;electrical properties measured in KxFeySe2 samples. DOI:;10.1103/PhysRevB.86.224502;Landsgesell, Sven/B-1467-2013; Prokes, Karel/J-5438-2013;Landsgesell, Sven/0000-0002-2469-3548; Prokes, Karel/0000-0002-7034-1738;10;0;0;0;10;1098-0121;WOS:000311910900005;;;J;Liu, Wei;Carrasco, Javier;Santra, Biswajit;Michaelides, Angelos;Scheffler, Matthias;Tkatchenko, Alexandre;Benzene adsorbed on metals: Concerted effect of covalency and van der;Waals bonding;PHYSICAL REVIEW B;86;24;245405;10.1103/PhysRevB.86.245405;DEC 5 2012;2012;The adsorption of aromatic molecules on metal surfaces plays a key role;in condensed matter physics and functional materials. Depending on the;strength of the interaction between the molecule and the surface, the;binding is typically classified as either physisorption or;chemisorption. Van der Waals (vdW) interactions contribute significantly;to the binding in physisorbed systems, but the role of the vdW energy in;chemisorbed systems remains unclear. Here we study the interaction of;benzene with the (111) surface of transition metals, ranging from weak;adsorption (Ag and Au) to strong adsorption (Pt, Pd, Ir, and Rh). When;vdW interactions are accurately accounted for, the barrier to adsorption;predicted by standard density-functional theory (DFT) calculations;essentially vanishes, producing a metastable precursor state on Pt and;Ir surfaces. Notably, vdW forces contribute more to the binding of;covalently bonded benzene than they do when benzene is physisorbed.;Comparison to experimental data demonstrates that some of the recently;developed methods for including vdW interactions in DFT allow;quantitative treatment of both weakly and strongly adsorbed aromatic;molecules on metal surfaces, extending the already excellent performance;found for molecules in the gas phase.;Michaelides, Angelos/K-8727-2012; Santra, Biswajit/C-4818-2008; Tkatchenko, Alexandre/E-7148-2011;Santra, Biswajit/0000-0003-3609-2106; Tkatchenko,;Alexandre/0000-0002-1012-4854;52;2;0;0;52;1098-0121;WOS:000311912300005;;;J;Ou, Xin;Koegler, Reinhard;Zhou, Hong-Bo;Anwand, Wolfgang;Grenzer, Joerg;Huebner, Rene;Voelskow, Matthias;Butterling, Maik;Zhou, Shengqiang;Skorupa, Wolfgang;Release of helium from vacancy defects in yttria-stabilized zirconia;under irradiation;PHYSICAL REVIEW B;86;22;224103;10.1103/PhysRevB.86.224103;DEC 5 2012;2012;Fission gas retention or release has a critical impact on the function;of advanced nuclear materials. Helium trapping in, and release from,;radiation defects induced by neutrons and by a decay in YSZ;(yttria-stabilized zirconia) is experimentally simulated using;synchronized Zr+ and He+ dual ion beam irradiation. The measured damage;profiles consist of two peaks which agree well with the calculated;profiles of implantation induced excess point defects. This special;implantation related effect has to be carefully considered in the;evaluation of experimental investigations which simulate isotropic;irradiation effects such as a decay. First-principles calculations show;that helium is energetically favorable to be trapped by Zr vacancies in;YSZ. Implanted helium alone in YSZ is accumulated in undesirable helium;bubbles and results in local surface swelling and lift-off. However,;under dual beam irradiation helium is released from vacancy defects and;is out-diffused at room temperature. Helium is mobilized by a;vacancy-assisted trapping/detrapping mechanism induced by the;simultaneous Zr+ ion implantation. This behavior avoids the deleterious;helium bubble formation and contributes to the suitable application;characteristics of YSZ which result in its excellent radiation hardness.;DOI: 10.1103/PhysRevB.86.224103;Zhou, Shengqiang/C-1497-2009;Zhou, Shengqiang/0000-0002-4885-799X;3;0;2;0;3;1098-0121;WOS:000311910900003;;;J;Pauly, C.;Bihlmayer, G.;Liebmann, M.;Grob, M.;Georgi, A.;Subramaniam, D.;Scholz, M. R.;Sanchez-Barriga, J.;Varykhalov, A.;Bluegel, S.;Rader, O.;Morgenstern, M.;Probing two topological surface bands of Sb2Te3 by spin-polarized;photoemission spectroscopy;PHYSICAL REVIEW B;86;23;235106;10.1103/PhysRevB.86.235106;DEC 5 2012;2012;Using high-resolution spin-and angle-resolved photoemission;spectroscopy, we map the electronic structure and spin texture of the;surface states of the topological insulator Sb2Te3. In combination with;density functional calculations (DFT), we directly show that Sb2Te3;exhibits a partially occupied, single spin-Dirac cone around the Fermi;energy E-F, which is topologically protected. DFT obtains a spin;polarization of the occupied Dirac cone states of 80-90%, which is in;reasonable agreement with the experimental data after careful background;subtraction. Furthermore, we observe a strongly spin-orbit split surface;band at lower energy. This state is found at E - E-F similar or equal to;-0.8 eV at the (Gamma) over bar point, disperses upward, and disappears;at about E - E-F = -0.4 eV into two different bulk bands. Along the;(Gamma) over bar-(K) over bar direction, the band is located within a;spin-orbit gap. According to an argument given by Pendry and Gurman in;1975, such a gap must contain a surface state, if it is located away;from the high-symmetry points of the Brillouin zone. Thus, the novel;spin-split state is protected by symmetry, too.;Bihlmayer, Gustav/G-5279-2013; Rader, Oliver/H-8498-2013; Sanchez-Barriga, Jaime/I-3493-2013; Varykhalov, Andrei/I-3571-2013; Blugel, Stefan/J-8323-2013; Liebmann, Marcus/G-6254-2012; Morgenstern, Markus/K-7785-2013;Bihlmayer, Gustav/0000-0002-6615-1122; Rader,;Oliver/0000-0003-3639-0971; Sanchez-Barriga, Jaime/0000-0001-9947-6700;;Varykhalov, Andrei/0000-0002-7901-3562; Blugel,;Stefan/0000-0001-9987-4733; Liebmann, Marcus/0000-0003-4787-0129;;Morgenstern, Markus/0000-0002-3993-6880;15;0;0;0;15;1098-0121;WOS:000311911500002;;;J;Silveirinha, Mario G.;Engheta, Nader;Metamaterial-inspired model for electron waves in bulk semiconductors;PHYSICAL REVIEW B;86;24;245302;10.1103/PhysRevB.86.245302;DEC 5 2012;2012;Based on an analogy with electromagnetic metamaterials, we develop an;effective medium description for the propagation of electron matter;waves in bulk semiconductors with a zinc-blende structure. It is;formally demonstrated that even though departing from a different;starting point, our theory gives results for the energy stationary;states consistent with Bastard's envelope-function approximation in the;long-wavelength limit. Using the proposed approach, we discuss the time;evolution of a wave packet in a bulk semiconductor with a zero-gap and;linear energy-momentum dispersion.;4;0;0;0;4;1098-0121;WOS:000311912300004;;;J;Valla, T.;Ji, Huiwen;Schoop, L. M.;Weber, A. P.;Pan, Z. -H.;Sadowski, J. T.;Vescovo, E.;Fedorov, A. V.;Caruso, A. N.;Gibson, Q. D.;Muechler, L.;Felser, C.;Cava, R. J.;Topological semimetal in a Bi-Bi2Se3 infinitely adaptive superlattice;phase;PHYSICAL REVIEW B;86;24;241101;10.1103/PhysRevB.86.241101;DEC 5 2012;2012;We report spin-and angle-resolved photoemission studies of a topological;semimetal from the infinitely adaptive series between elemental Bi and;Bi2Se3. The compound, based on Bi4Se3, is a 1:1 natural superlattice of;alternating Bi-2 layers and Bi2Se3 layers; the inclusion of S allows the;growth of large crystals, with the formula Bi4Se2.6S0.4. The crystals;cleave along the interfaces between the Bi-2 and Bi2Se3 layers, with the;surfaces obtained having alternating Bi or Se termination. The resulting;terraces, observed by photoemission electron microscopy, create avenues;suitable for the study of one-dimensional topological physics. The;electronic structure, determined by spin-and angle-resolved;photoemission spectroscopy, shows the existence of a surface state that;forms a large, hexagonally shaped Fermi surface around the Gamma point;of the surface Brillouin zone, with the spin structure indicating that;this material is a topological semimetal.;Felser, Claudia/A-5779-2009; Schoop, Leslie/A-4627-2013; Muchler, Lukas/A-4628-2013; Ji, Huiwen/O-5145-2014;Schoop, Leslie/0000-0003-3459-4241;;15;2;0;0;15;1098-0121;WOS:000311912300001;;;J;Witczak-Krempa, William;Ghaemi, Pouyan;Senthil, T.;Kim, Yong Baek;Universal transport near a quantum critical Mott transition in two;dimensions;PHYSICAL REVIEW B;86;24;245102;10.1103/PhysRevB.86.245102;DEC 5 2012;2012;We discuss the universal-transport signatures near a zero-temperature;continuous Mott transition between a Fermi liquid and a quantum spin;liquid in two spatial dimensions. The correlation-driven transition;occurs at fixed filling and involves fractionalization of the electron:;upon entering the spin liquid, a Fermi surface of neutral spinons;coupled to an internal gauge field emerges. We present a controlled;calculation of the value of the zero-temperature universal resistivity;jump predicted to occur at the transition. More generally, the behavior;of the universal scaling function that collapses the temperature-and;pressure-dependent resistivity is derived, and is shown to bear a strong;imprint of the emergent gauge fluctuations. We further predict a;universal jump of the thermal conductivity across the Mott transition,;which derives from the breaking of conformal invariance by the damped;gauge field, and leads to a violation of the Wiedemann-Franz law in the;quantum critical region. A connection to the quasitriangular organic;salts is made, where such a transition might occur. Finally, we present;some transport results for the pure rotor O(N) conformal field theory.;10;0;0;0;10;1098-0121;WOS:000311912300003;;;J;Apostolov, Stanislav;Levchenko, Alex;Josephson current and density of states in proximity circuits with;s(+)-superconductors;PHYSICAL REVIEW B;86;22;224501;10.1103/PhysRevB.86.224501;DEC 4 2012;2012;We study the emergent proximity effect in mesoscopic circuits that;involve a conventional superconductor and an unconventional pnictide;superconductor separated by a diffusive normal or ferromagnetic wire.;The focus is placed on revealing signatures of the proposed s(+)-state;of pnictides from the proximity-induced density of states and Josephson;current. We find analytically a universal result for the density of;states that exhibits both the Thouless gap at low energies and peculiar;features near the superconducting gap edges at higher energies. The;latter may be used to discriminate between s(+)- and s(++) symmetry;scenarios in scanning tunneling spectroscopy experiments. We also;calculate Josephson current-phase relationships for different junction;configurations, which are found to display robust 0-pi transitions for a;wide range of parameters.;3;0;0;0;3;1098-0121;WOS:000311910600005;;;J;Balci, Sinan;Kocabas, Coskun;Ates, Simge;Karademir, Ertugrul;Salihoglu, Omer;Aydinli, Atilla;Tuning surface plasmon-exciton coupling via thickness dependent plasmon;damping;PHYSICAL REVIEW B;86;23;235402;10.1103/PhysRevB.86.235402;DEC 4 2012;2012;In this paper, we report experimental and theoretical investigations on;tuning of the surface plasmon-exciton coupling by controlling the;plasmonic mode damping, which is defined by the plasmonic layer;thickness. The results reveal the formation of plasmon-exciton hybrid;state characterized by a tunable Rabi splitting with energies ranging;from 0 to 150 meV. Polarization-dependent spectroscopic reflection;measurements were employed to probe the dispersion of the coupled;system. The transfer matrix method and analytical calculations were used;to model the self-assembled J-aggregate/metal multilayer structures in;excellent agreement with experimental observations.;Kocabas, Coskun/C-6018-2013;6;0;0;0;6;1098-0121;WOS:000311911100002;;;J;Belashchenko, K. D.;Glasbrenner, J. K.;Wysocki, A. L.;Spin injection from a half-metal at finite temperatures;PHYSICAL REVIEW B;86;22;224402;10.1103/PhysRevB.86.224402;DEC 4 2012;2012;Spin injection from a half-metallic electrode in the presence of thermal;spin disorder is analyzed using a combination of random matrix theory,;spin-diffusion theory, and explicit simulations for the tight-binding;s-d model. It is shown that efficient spin injection from a half-metal;is possible as long as the effective resistance of the normal metal does;not exceed a characteristic value, which does not depend on the;resistance of the half-metallic electrode but, rather, is controlled by;spin-flip scattering at the interface. This condition can be formulated;as alpha less than or similar to l/l(sf)(N) T-c(-1) where a is the;relative deviation of the magnetization from saturation, l and l(sf)(N);are the mean-free path and the spin-diffusion length in the nonmagnetic;channel, and T-c is the transparency of the tunnel barrier at the;interface (if present). The general conclusions are confirmed by;tight-binding s-d model calculations. A rough estimate suggests that;efficient spin injection from true half-metallic ferromagnets into;silicon or copper may be possible at room temperature across a;transparent interface.;Wysocki, Aleksander/D-6928-2013;1;0;0;0;1;1098-0121;WOS:000311910600003;;;J;Bessas, D.;Sergueev, I.;Wille, H. -C.;Persson, J.;Ebling, D.;Hermann, R. P.;Lattice dynamics in Bi2Te3 and Sb2Te3: Te and Sb density of phonon;states;PHYSICAL REVIEW B;86;22;224301;10.1103/PhysRevB.86.224301;DEC 4 2012;2012;The lattice dynamics in Bi2Te3 and Sb2Te3 were investigated both;microscopically and macroscopically using Sb-121 and Te-125 nuclear;inelastic scattering, x-ray diffraction, and heat capacity measurements.;In combination with earlier inelastic neutron scattering data, the;element-specific density of phonon states was obtained for both;compounds and phonon polarization analysis was carried out for Bi2Te3. A;prominent peak in the Te specific density of phonon states at 13 meV,;that involves mainly in-plane vibrations, is mostly unaffected upon;substitution of Sb with Bi revealing vibrations with essentially Te;character. A significant softening is observed for the density of;vibrational states of Bi with respect to Sb, consistently with the mass;homology relation in the long-wavelength limit. In order to explain the;energy mismatch in the optical phonon region, a similar to 20% force;constant softening of the Sb-Te bond with respect to the Bi-Te bond is;required. The reduced average speed of sound at 20 K in Bi2Te3, 1.75(1);km/s, compared to Sb2Te3, 1.85(4) km/s, is not only related to the;larger mass density but also to a larger Debye level. The observed low;lattice thermal conductivity at 295 K, 2.4 Wm(-1)K(-1) for Sb2Te3 and;1.6 Wm(-1)K(-1) for Bi2Te3, cannot be explained by anharmonicity alone;given the rather modest Gruneisen parameters, 1.7(1) for Sb2Te3 and;1.5(1) for Bi2Te3, without accounting for the reduced speed of sound and;more importantly the low acoustic cutoff energy.;Wille, Hans-Christian/C-3881-2013; Hermann, Raphael/F-6257-2013; Bessas, Dimitrios/I-5262-2013;Hermann, Raphael/0000-0002-6138-5624; Bessas,;Dimitrios/0000-0003-0240-2540;5;0;1;0;5;1098-0121;WOS:000311910600002;;;J;de Resseguier, T.;Lescoute, E.;Loison, D.;Influence of elevated temperature on the wave propagation and spallation;in laser shock-loaded iron;PHYSICAL REVIEW B;86;21;214102;10.1103/PhysRevB.86.214102;DEC 4 2012;2012;Laser shock experiments have been performed on preheated iron samples to;address the role of initial temperature on the elastic limit, wave;propagation, and spall fracture in this metal over the temperature range;300-1000 K at very high expansion rates of the order of 3 x 10(6) s(-1).;Time-resolved measurements of the free-surface velocity indicate a;slight, roughly linear decrease of the spall strength with increasing;temperature, accompanied by a clear change from brittle to ductile;fracture behavior evidenced from post-shot examination of the recovered;samples. The results are discussed on the basis of simulations;accounting for laser-matter interaction, pressure wave propagation, and;subsequent polymorphic transformations throughout the sample thickness.;Over the explored range of loading conditions, the occurrence of such;transformations prior to spallation, which takes place near the;free-surface under tensile loading after reversion to the alpha phase,;does not seem to strongly affect dynamic fracture.;loison, didier/N-2122-2014;3;0;0;0;3;1098-0121;WOS:000311910100001;;;J;Ellis, David S.;Uchiyama, Hiroshi;Tsutsui, Satoshi;Sugimoto, Kunihisa;Kato, Kenichi;Ishikawa, Daisuke;Baron, Alfred Q. R.;Phonon softening and dispersion in EuTiO3;PHYSICAL REVIEW B;86;22;220301;10.1103/PhysRevB.86.220301;DEC 4 2012;2012;We measured phonon dispersion in single-crystal EuTiO3 using inelastic;x-ray scattering. Astructural transition to an antiferrodistortive phase;was found at a critical temperature T-0 = 287 +/- 1K using powder and;single-crystal x-ray diffraction. Clear softening of the zone boundary;R-point q = (0.5 0.5 0.5) acoustic phonon shows this to be a displacive;transition. The mode energy plotted against reduced temperature could be;seen to nearly overlap that of SrTiO3, suggesting a universal scaling;relation. Phonon dispersion was measured along Gamma-X (0 0 0) -> (0.5 0;0). Mode eigenvectors were obtained from a shell model consistent with;the q dependence of intensity and energy, which also showed that the;dispersion is nominally the same as in SrTiO3 at room temperature, but;corrected for mass. The lowest-energy optical mode, determined to be of;Slater character, softens approximately linearly with temperature until;the 70-100 K range where the softening stops, and at low temperature,;the mode disperses linearly near the zone center.;7;0;0;0;7;1098-0121;WOS:000311910600001;;;J;Fock, J.;Leijnse, M.;Jennum, K.;Zyazin, A. S.;Paaske, J.;Hedegard, P.;Nielsen, M. Brondsted;van der Zant, H. S. J.;Manipulation of organic polyradicals in a single-molecule transistor;PHYSICAL REVIEW B;86;23;235403;10.1103/PhysRevB.86.235403;DEC 4 2012;2012;Inspired by cotunneling spectroscopy of spin-states in a single;OPE5-based molecule, we investigate the prospects for electric control;of magnetism in purely organic molecules contacted in a three-terminal;geometry. Using the gate electrode, the molecule is reversibly switched;between three different redox states, with magnetic spectra revealing;both ferromagnetic and antiferromagnetic exchange couplings on the;molecule. These observations are shown to be captured by an effective;low-energy Heisenberg model, which we substantiate microscopically by a;simple valence bond description of the molecule. These preliminary;findings suggest an interesting route towards functionalized all-organic;molecular magnetism.;Fock, Jeppe/A-9074-2011;Fock, Jeppe/0000-0002-7515-4026;3;0;0;0;3;1098-0121;WOS:000311911100003;;;J;Li, P. H. Y.;Bishop, R. F.;Campbell, C. E.;Farnell, D. J. J.;Goetze, O.;Richter, J.;Spin-1/2 Heisenberg antiferromagnet on an anisotropic kagome lattice;PHYSICAL REVIEW B;86;21;214403;10.1103/PhysRevB.86.214403;DEC 4 2012;2012;We use the coupled-cluster method to study the zero-temperature;properties of an extended two-dimensional Heisenberg antiferromagnet;formed from spin-1/2 moments on an infinite spatially anisotropic kagome;lattice of corner-sharing isosceles triangles, with nearest-neighbor;bonds only. The bonds have exchange constants J(1) > 0 along two of the;three lattice directions and J(2) = kappa J(1) > 0 along the third. In;the classical limit, the ground-state (GS) phase for kappa < 1/2 has;collinear ferrimagnetic (Neel') order where the J(2)-coupled chain spins;are ferromagnetically ordered in one direction with the remaining spins;aligned in the opposite direction, while for kappa > 1/2 there exists an;infinite GS family of canted ferrimagnetic spin states, which are;energetically degenerate. For the spin-1/2 case, we find that quantum;analogs of both these classical states continue to exist as stable GS;phases in some regions of the anisotropy parameter kappa, namely, for 0;< kappa < kappa(c1) for the Neel' state and for (at least part of) the;region kappa > kappa(c2) for the canted phase. However, they are now;separated by a paramagnetic phase without either sort of magnetic order;in the region kappa(c1) < kappa < kappa(c2), which includes the;isotropic kagome point kappa = 1 where the stable GS phase is now;believed to be a topological (Z(2)) spin liquid. Our best numerical;estimates are kappa(c1) = 0.515 +/- 0.015 and kappa(c2) = 1.82 +/- 0.03.;Richter, Johannes/A-6339-2009; Bishop, Raymond/D-9715-2012;Bishop, Raymond/0000-0001-5565-0658;4;0;0;0;4;1098-0121;WOS:000311910100002;;;J;Monozon, B. S.;Schmelcher, P.;Bound and resonant impurity states in a narrow gapped armchair graphene;nanoribbon;PHYSICAL REVIEW B;86;24;245404;10.1103/PhysRevB.86.245404;DEC 4 2012;2012;An analytical study of discrete and resonant impurity quasi-Coulomb;states in a narrow gapped armchair graphene nanoribbon (GNR) is;performed. We employ the adiabatic approximation assuming that the;motions parallel ("slow") and perpendicular ("fast") to the boundaries;of the ribbon are separated adiabatically. The energy spectrum comprises;a sequence of series of quasi-Rydberg levels relevant to the slow motion;adjacent from the low energies to the size-quantized levels associated;with the fast motion. Only the series attributed to the ground;size-quantized subband is really discrete, while others corresponding to;the excited subbands consist of quasidiscrete (Fano resonant) levels of;nonzero energetic widths, caused by the coupling with the states of the;continuous spectrum branching from the low lying subbands. In the;two-and three-subband approximation the spectrum of the complex energies;of the impurity electron is derived in an explicit form. Narrowing the;GNR leads to an increase of the binding energy and the resonant width;both induced by the finite width of the ribbon. Displacing the impurity;center from the midpoint of the GNR causes the binding energy to;decrease, while the resonant width of the first excited Rydberg series;increases. As for the second excited series, their widths become;narrower with the shift of the impurity. A successful comparison of our;analytical results with those obtained by other theoretical and;experimental methods is presented. Estimates of the binding energies and;the resonant widths taken for the parameters of typical GNRs show that;not only the strictly discrete but also some resonant states are quite;stable and could be studied experimentally in doped GNRs.;Monozon, Boris/E-6412-2012; Schmelcher, Peter/D-9592-2014;Schmelcher, Peter/0000-0002-2637-0937;0;0;0;0;0;1098-0121;WOS:000311911900002;;;J;Thiaville, Andre;Vukadinovic, Nicolas;Acher, Olivier;Sum rule for the magnetic permeability of arbitrary textures;PHYSICAL REVIEW B;86;21;214404;10.1103/PhysRevB.86.214404;DEC 4 2012;2012;The f-sum rule for the magnetic permeability, derived previously for an;assembly of isolated macrospins, is generalized for an arbitrary;nonuniform three-dimensional magnetization texture, in which the;magnetizations at different points are coupled by exchange and;magnetostatic interactions. The sum value depends only on the magnetic;texture at rest. It has no direct contribution from the exchange energy,;but depends on the anisotropy, applied field, and demagnetizing;energies. The derived formula is tested against numerical calculations;for several complex and very different magnetization structures. This;generalized sum rule should be useful for experiments, numerical;simulations, and metrology.;1;0;0;0;1;1098-0121;WOS:000311910100003;;;J;Troc, R.;Gajek, Z.;Pikul, A.;Dualism of the 5f electrons of the ferromagnetic superconductor UGe2 as;seen in magnetic, transport, and specific-heat data;PHYSICAL REVIEW B;86;22;224403;10.1103/PhysRevB.86.224403;DEC 4 2012;2012;Single-crystalline UGe2 was investigated by means of magnetic;susceptibility, magnetization, electrical resistivity,;magnetoresistivity, and specific-heat measurements, all carried out in;wide temperature and magnetic-field ranges. An analysis of the obtained;data points out the dual behavior of the 5f electrons in this compound,;i. e., possessing simultaneously local and itinerant characters in two;substates. The magnetic and thermal characteristics of the compound were;modeled using the effective crystal field (CF) in the intermediate;coupling scheme and initial parameters obtained in the angular overlap;model. Various configurations of the localized 5f(n) (n = 1, 2, and 3);electrons on the uranium ion have been probed. The best results were;obtained for the 5f(2) (U4+) configuration. The CF parameters obtained;in the paramagnetic region allowed us to reproduce satisfactorily the;experimental findings in the whole temperature range including also the;magnitude of the ordered magnetic moment of uranium at low temperature.;The electrical resistivity data after subtraction of the phonon;contribution reveal the presence of a Kondo-like interaction in UGe2;supporting the idea of partial localization of the 5f electrons in UGe2.;On the other hand, magnetoresistivity and an excess of specific heat;originated from the hybridized (itinerant) part of 5f states, apparent;around the characteristic temperature T*, give a distinct signature for;the presence of the coupled charge-density wave and spin-density wave;fluctuations over all the ferromagnetic region with a maximum at T*,;postulated earlier in the literature.;7;0;0;0;7;1098-0121;WOS:000311910600004;;;J;Williams, T. J.;Yamani, Z.;Butch, N. P.;Luke, G. M.;Maple, M. B.;Buyers, W. J. L.;Neutron scattering study of URu2-xRexSi2 (x=0.10): Driving order towards;quantum criticality;PHYSICAL REVIEW B;86;23;235104;10.1103/PhysRevB.86.235104;DEC 4 2012;2012;We report inelastic neutron scattering measurements in the hidden order;state of URu2-xRexSi2 with x = 0.10. We observe that towards the;ferromagnetic quantum critical point induced by the negative chemical;pressure of Re doping, the gapped incommensurate fluctuations are robust;and comparable in intensity to the parent material. As the Re doping;moves the system toward the quantum critical point, the commensurate;spin fluctuations related to hidden order weaken, display a shortened;lifetime, and slow down. Halfway to the quantum critical point, the;hidden order phase survives, albeit weakened, in contrast to its;destruction by hydrostatic pressure and by positive chemical pressure;from Rh doping.;yamani, zahra/B-7892-2012; Luke, Graeme/A-9094-2010;0;0;0;0;0;1098-0121;WOS:000311911100001;;;J;Wolfowicz, Gary;Simmons, Stephanie;Tyryshkin, Alexei M.;George, Richard E.;Riemann, Helge;Abrosimov, Nikolai V.;Becker, Peter;Pohl, Hans-Joachim;Lyon, Stephen A.;Thewalt, Mike L. W.;Morton, John J. L.;Decoherence mechanisms of Bi-209 donor electron spins in isotopically;pure Si-28;PHYSICAL REVIEW B;86;24;245301;10.1103/PhysRevB.86.245301;DEC 4 2012;2012;Bismuth (Bi-209) is the deepest group V donor in silicon and possesses;the most extreme characteristics such as a 9/2 nuclear spin and a 1.5;GHz hyperfine coupling. These lead to several potential advantages for a;Si:Bi donor electron spin qubit compared to the more common phosphorus;donor. Most previous studies on Si: Bi have been performed using natural;silicon where linewidths and electron spin coherence times are limited;by the presence of Si-29 impurities. Here, we describe electron spin;resonance (ESR) and electron nuclear double resonance (ENDOR) studies on;Bi-209 in isotopically pure Si-28. ESR and ENDOR linewidths, transition;probabilities, and coherence times are understood in terms of the spin;Hamiltonian parameters showing a dependence on field and m(I) of the;Bi-209 nuclear spin. We explore various decoherence mechanisms;applicable to the donor electron spin, measuring coherence times up to;700 ms at 1.7 K at X band, comparable with Si-28:P. Importantly, the;coherence times we measure follow closely to the calculated field;gradients of the transition frequencies (df/dB), providing a strong;motivation to explore "clock" transitions where coherence lifetimes;could be further enhanced.;Morton, John/I-3515-2013;6;1;0;0;6;1098-0121;WOS:000311911900001;;;J;Armbruster, Oskar;Lungenschmied, Christoph;Bauer, Siegfried;Investigation of trap states and mobility in organic semiconductor;devices by dielectric spectroscopy: Oxygen-doped P3HT:PCBM solar cells;PHYSICAL REVIEW B;86;23;235201;10.1103/PhysRevB.86.235201;DEC 3 2012;2012;We investigate the dielectric response of solar cell devices based on;oxygen-doped poly(3-hexylthiophene):[6,6]-phenyl-C-61-butyric acid;methyl ester (P3HT:PCBM) blends as a function of temperature between 133;K and 303 K. The spectra are analyzed using a recently introduced model;[O. Armbruster, C. Lungenschmied, and S. Bauer, Phys. Rev. B 84, 085208;(2011)] which is based on a trapping and reemission mechanism of charge;carriers. A dominating trap depth of 130 meV is determined and the;broadening of this trap level identified as purely thermal. In addition;we estimate the density of charge carriers after doping as well as their;mobility. We show that the concentration of mobile holes approximately;doubles by heating the device from the lowest to the highest measured;temperature. This is indicative of a second, shallow trap level of;approximately 14 meV. Dielectric spectroscopy hence proves to be a;valuable tool to assess device parameters such as dopant concentration,;charge carrier transport characteristics, and mobility which are of;crucial interest for understanding degradation in organic semiconductor;devices.;Bauer, Siegfried/A-2354-2009; Armbruster, Oskar/G-1154-2014;Armbruster, Oskar/0000-0002-4235-4451;3;0;0;0;3;1098-0121;WOS:000311806300004;;;J;Chen, Bo;Abbey, Brian;Dilanian, Ruben;Balaur, Eugeniu;van Riessen, Grant;Junker, Mark;Tran, Chanh Q.;Jones, Michael W. M.;Peele, Andrew G.;McNulty, Ian;Vine, David J.;Putkunz, Corey T.;Quiney, Harry M.;Nugent, Keith A.;Diffraction imaging: The limits of partial coherence;PHYSICAL REVIEW B;86;23;235401;10.1103/PhysRevB.86.235401;DEC 3 2012;2012;Coherent diffraction imaging (CDI) typically requires that the source;should be highly coherent both laterally and longitudinally. In this;paper, we demonstrate that lateral and longitudinal partial coherence;can be successfully included in a CDI reconstruction algorithm;simultaneously using experimental x-ray data. We study the interplay;between lateral partial coherence and longitudinal partial coherence and;their relative influence on CDI. We compare our results against the;coherence criteria published by Spence et al. [Spence et al.,;Ultramicroscopy 101, 149 (2004)] and show that for iterative ab initio;phase-recovery algorithms based on those typically used in CDI and in;cases where the coherence properties are known, we are able to relax the;minimal coherence requirements by a factor of 2 both laterally and;longitudinally, potentially yielding significant reduction in exposure;time.;Jones, Michael/M-6895-2013; Abbey, Brian/D-3274-2011;Jones, Michael/0000-0002-0720-8715;;5;1;0;0;5;1098-0121;WOS:000311806300008;;;J;Gawarecki, Krzysztof;Lueker, Sebastian;Reiter, Doris E.;Kuhn, Tilmann;Glaessl, Martin;Axt, Vollrath Martin;Grodecka-Grad, Anna;Machnikowski, Pawel;Dephasing in the adiabatic rapid passage in quantum dots: Role of;phonon-assisted biexciton generation;PHYSICAL REVIEW B;86;23;235301;10.1103/PhysRevB.86.235301;DEC 3 2012;2012;We study the evolution of an exciton confined in a quantum dot;adiabatically controlled by a frequency-swept (chirped) laser pulse in;the presence of carrier-phonon coupling. We focus on the dynamics;induced by a linearly polarized beam and analyze the decoherence due to;phonon-assisted biexciton generation. We show that if the biexciton;state is shifted down by a few meV, as is typically the case, then the;resulting decoherence is strong even at low temperatures. As a result,;efficient state preparation is restricted to a small parameter area;corresponding to low temperatures, positive chirps, and moderate pulse;areas.;Kuhn, Tilmann/C-1190-2008;6;0;0;0;6;1098-0121;WOS:000311806300006;;;J;Hellstrom, Matti;Spangberg, Daniel;Hermansson, Kersti;Broqvist, Peter;Cu dimer formation mechanism on the ZnO(10(1)over-bar0) surface;PHYSICAL REVIEW B;86;23;235302;10.1103/PhysRevB.86.235302;DEC 3 2012;2012;The formation of Cu dimers on the ZnO(10 (1) over bar0) surface has been;studied using hybrid density functional theory. Depending on the;adsorption site, Cu atoms are found to adsorb with either oxidation;state 0 or +1. In the latter case, the Cu atom has donated an electron;to the ZnO conduction band. The two modes of adsorption display similar;stability at low coverages, while at higher coverages the neutral;species is more stable. Single Cu atoms diffuse across the ZnO(10 (1);over bar0) surface with small barriers of migration (0.3-0.4 eV) along;ZnO[1 (2) over bar 10], repeatedly switching their oxidation states,;while the barrier along ZnO[0001] is significantly higher (>1.5 eV). The;formation of a Cu dimer from two adsorbed Cu atoms is energetically;favorable with two competing structures of similar stability, both being;charge neutral. The minimum energy paths for Cu atom diffusion and dimer;formation are characterized by at least one of the two Cu atoms being in;oxidation state 0.;5;0;0;0;5;1098-0121;WOS:000311806300007;;;J;Huang, Yu-Kun;Chen, Pochung;Kao, Ying-Jer;Accurate computation of low-temperature thermodynamics for quantum spin;chains;PHYSICAL REVIEW B;86;23;235102;10.1103/PhysRevB.86.235102;DEC 3 2012;2012;We apply the biorthonormal transfer-matrix renormalization group (BTMRG);[Huang, Phys. Rev. E 83, 036702 (2011)] to study low-temperature;properties of quantum spin chains. Simulations on anisotropic Heisenberg;spin-1/2 chains demonstrate that the BTMRG outperforms the conventional;transfer-matrix renormalization group by successfully accessing far;lower temperature than previously reported, while retaining the same;level of accuracy. The power of the method is further illustrated by the;calculation of the low-temperature specific heat for a frustrated spin;chain.;Kao, Ying Jer/B-5297-2009; Chen, Pochung/G-1241-2010;Kao, Ying Jer/0000-0002-3329-6018;;4;0;0;0;4;1098-0121;WOS:000311806300002;;;J;Kim, Jin Hee;Rhyee, Jong-Soo;Kwon, Yong Seung;Magnon gap formation and charge density wave effect on thermoelectric;properties in the SmNiC2 compound;PHYSICAL REVIEW B;86;23;235101;10.1103/PhysRevB.86.235101;DEC 3 2012;2012;We studied the electrical, thermal, and thermoelectric properties of the;polycrystalline compound of SmNiC2. The electrical resistivity and;magnetization measurement show the interplay between the charge density;wave at T-CDW = 150 K and the ferromagnetic ordering of T-c = 18 K.;Below the ferromagnetic transition temperature, we observed the magnon;gap formation of Delta similar or equal to 4.3- 4.4 meV by rho(T) and;C-p (T) measurements. The charge density wave is attributed to the;increase of the Seebeck coefficient resulting in the increase of the;power factor S-2 sigma. The thermal conductivity anomalously increases;with increasing temperature along the whole measured temperature range,;which implies the weak attribution of Umklapp phonon scattering. The;thermoelectric figure of merit ZT significantly increases due to the;increase of the power factor at T-CDW = 150 K. Here we argue that the;competing interaction between electron-phonon and electron-magnon;couplings exhibits the unconventional behavior of electrical and thermal;properties.;6;0;1;0;6;1098-0121;WOS:000311806300001;;;J;Osorio-Guillen, J. M.;Larrauri-Pizarro, Y. D.;Dalpian, G. M.;Pressure-induced metal-insulator transition and absence of magnetic;order in FeGa3 from a first-principles study;PHYSICAL REVIEW B;86;23;235202;10.1103/PhysRevB.86.235202;DEC 3 2012;2012;The intermetallic compound FeGa3 is a narrow-gap semiconductor with a;measured gap between 0.2 and 0.6 eV. The presence of iron d states on;the top of the valence band and on the bottom of the conduction band,;together with its moderate electronic correlation (U/W similar to 0.6),;have led to the question of whether there is magnetic order in this;compound. We have examined the possible presence of magnetism in FeGa3;as well as its electronic structure at high pressures, using the density;functional theory (DFT) + U method with the intermediated;double-counting scheme. We have found that for an optimized value of the;Yukawa screening length., there is no magnetic moment on the iron ions;(mu = 0), implying that FeGa3 is nonmagnetic. We have also found that;around a pressure of 25 GPa a metal-insulator transition takes place.;Osorio-Guillen, Jorge/B-7587-2008; Dalpian, Gustavo/B-9746-2008;Osorio-Guillen, Jorge/0000-0002-7384-8999;;3;0;0;0;3;1098-0121;WOS:000311806300005;;;J;Yuan, Xun;Zhang, Yubo;Abtew, Tesfaye A.;Zhang, Peihong;Zhang, Wenqing;VO2: Orbital competition, magnetism, and phase stability;PHYSICAL REVIEW B;86;23;235103;10.1103/PhysRevB.86.235103;DEC 3 2012;2012;The relative phase stability of VO2 is one of the most fundamental;issues concerning the metal-insulator transition in this material but;has been so far largely unexplored theoretically. We investigate the;relative stability of various phases of VO2 using different levels of;energy functionals within density functional theory (DFT). It is found;that straightforward applications of several popular energy functionals,;including the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, result in;a wrong prediction for the ground state of VO2. In particular, although;the HSE and DFT + U methods are able to produce a band gap in the M-1;phase, they strongly favor the formation of local magnetic moments, a;result that clearly disagrees with experiments. We also examine the;effect of the occupation and the redistribution of the d derived t(2g);(i.e., d(xz), d(yz), and d(x2-y2)) orbitals of V atoms on the calculated;relative phase stability of VO2. We find that a small change in d;occupation can result in a drastically different theoretical prediction.;With the introduction of an orbital-dependent potential, a complete;separation between the d(x2-y2) derived valence band and d(xz) and d(yz);derived conduction bands in the M-1 phase is achieved, resulting in a;slight redistribution of the d occupation and a more faithful account of;the polarization of the t(2g) orbitals. This slight rearrangement of the;d occupation also leads to a relative phase stability of VO2 ( including;structural and magnetic phases) that agrees well with experiment.;Zhang, Wenqing/K-1236-2012; Zhang, Peihong/D-2787-2012;4;0;0;0;4;1098-0121;WOS:000311806300003;;;J;Campi, Davide;Bernasconi, Marco;Benedek, Giorgio;Electronic properties and lattice dynamics of the As(111) surface;PHYSICAL REVIEW B;86;24;245403;10.1103/PhysRevB.86.245403;DEC 3 2012;2012;The bulk and surface electronic and structural properties of As(111);have been studied with first-principles methods. The inclusion of;spin-orbit interaction reveals that As shares the same topologically;nontrivial order of the bulk electronic bands of Sb which gives rise to;two spin-polarized surface states connecting valence-like and;conduction-like states. Bulk and surface phonons have been calculated by;means of density functional perturbation theory. The surface phonon;bands reveal features related to a remarkable stiffening of the surface;bilayer with respect to the bulk ones similarly to what is measured for;the Bi(111) and to what is expected for the Sb(111) surface.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000311806500003;;;J;Chakraborty, Akash;Wenk, Paul;Bouzerar, Richard;Bouzerar, Georges;Spontaneous magnetization in the presence of nanoscale inhomogeneities;in diluted magnetic systems;PHYSICAL REVIEW B;86;21;214402;10.1103/PhysRevB.86.214402;DEC 3 2012;2012;The presence of nanoscale inhomogeneities has been experimentally;evidenced in several diluted magnetic systems, which in turn often leads;to interesting physical phenomena. However, a proper theoretical;understanding of the underlying physics is lacking in most of the cases.;Here, we present a detailed and comprehensive theoretical study of the;effects of nanoscale inhomogeneities on the temperature-dependent;spontaneous magnetization in diluted magnetic systems, which is found to;exhibit an unusual and unconventional behavior. The effects of impurity;clustering on the magnetization response have hardly been studied until;now. We show that nanosized clusters of magnetic impurities can lead to;drastic effects on the magnetization compared to that of homogeneously;diluted compounds. The anomalous nature of the magnetization curves;strongly depends on the relative concentration of the inhomogeneities as;well as the effective range of the exchange interactions. In addition,;we also provide a systematic discussion of the nature of the;distributions of the local magnetizations.;3;0;0;0;3;1098-0121;WOS:000311805500004;;;J;Dmitriev, A. P.;Gornyi, I. V.;Polyakov, D. G.;Coulomb drag between ballistic quantum wires;PHYSICAL REVIEW B;86;24;245402;10.1103/PhysRevB.86.245402;DEC 3 2012;2012;We develop a kinetic equation description of Coulomb drag between;ballistic one-dimensional electron systems, which enables us to;demonstrate that equilibration processes between right- and left-moving;electrons are crucially important for establishing dc drag. In;one-dimensional geometry, this type of equilibration requires either;backscattering near the Fermi level or scattering with small-momentum;transfer near the bottom of the electron spectrum. Importantly, pairwise;forward scattering in the vicinity of the Fermi surface alone is not;sufficient to produce a nonzero dc drag resistivity rho(D), in contrast;to a number of works that have studied Coulomb drag due to this;mechanism of scattering before. We show that slow equilibration between;two subsystems of electrons of opposite chirality, "bottlenecked" by;inelastic collisions involving cold electrons near the bottom of the;conduction band, leads to a strong suppression of Coulomb drag, which;results in an activation dependence of rho(D) on temperature, instead of;the conventional power law. We demonstrate the emergence of a drag;regime in which rho(D) does not depend on the strength of interwire;interactions, while depending strongly on the strength of interactions;inside the wires.;4;0;0;0;4;1098-0121;WOS:000311806500002;;;J;Etz, Corina;Costa, Marcio;Eriksson, Olle;Bergman, Anders;Accelerating the switching of magnetic nanoclusters by anisotropy-driven;magnetization dynamics;PHYSICAL REVIEW B;86;22;224401;10.1103/PhysRevB.86.224401;DEC 3 2012;2012;In this work, the magnetization dynamics of clusters supported on;nonmagnetic substrates is shown to exhibit a complex response when;subjected to external magnetic fields. The field-driven magnetization;reversal of small Co clusters deposited on a Cu(111) surface has been;studied by means of first-principles calculations and atomistic spin;dynamics simulations. For applied fields ranging from 1 to 10 Tesla, we;observe a coherent magnetization reversal with switching times in the;range of several tenths of picoseconds to several nanoseconds, depending;on the field strength. We find a nonmonotonous dependence of the;switching times with respect to the strength of the applied field, which;we prove has its origin in the complex magnetic anisotropy landscape of;these low-dimensional systems. This effect is shown to be stable for;temperatures around 10 K, and is possible to realize over a range of;exchange interactions and anisotropy landscapes. Possible experimental;routes to achieve this unique switching behavior are discussed.;Bergman, Anders/H-7996-2012; Etz, Corina/E-3112-2014; Eriksson, Olle/E-3265-2014;Bergman, Anders/0000-0002-5134-1978;;3;1;0;0;3;1098-0121;WOS:000311805700003;;;J;Harada, S.;Zhou, J. J.;Yao, Y. G.;Inada, Y.;Zheng, Guo-qing;Abrupt enhancement of noncentrosymmetry and appearance of a spin-triplet;superconducting state in Li-2(Pd1-xPtx)(3)B beyond x=0.8;PHYSICAL REVIEW B;86;22;220502;10.1103/PhysRevB.86.220502;DEC 3 2012;2012;We report synthesis, Pt-195, B-11, and Li-7 NMR measurements, and;first-principles band calculations for noncentrosymmetric;superconductors Li-2(Pd1-xPtx)(3)B (x = 0, 0.2, 0.5, 0.8, 0.84, 0.9, and;1). For 0 <= x <= 0.8, the spin-lattice relaxation rate 1/T-1 shows a;clear coherence peak just below T-c, decreasing exponentially at low;temperature, and the Knight shift K-195 decreases below Tc. For x = 0.9;and 1.0, in contrast, 1/T-1 shows no coherence peak but a T-3 variation;and K-195 remains unchanged across T-c. These results indicate that the;superconducting state changes drastically from a spin-singlet dominant;to a spin-triplet dominant state at x = 0.8. We find that the distortion;of B(Pt,Pd)(6) increases abruptly above x = 0.8, which leads to an;abrupt enhancement of the asymmetric spin-orbit coupling as confirmed by;band calculation. Such structure distortion that enhances the extent of;inversion-symmetry breaking is primarily responsible for the pairing;symmetry evolution. The insight obtained here provides a guideline for;searching for noncentrosymmetric superconductors with a large;spin-triplet component.;Yao, Yugui/A-8411-2012; Zheng, Guo-qing/B-1524-2011;6;0;0;0;6;1098-0121;WOS:000311805700002;;;J;Huang, C. L.;Fritsch, V.;Kittler, W.;v. Loehneysen, H.;Low-temperature properties of CeAu2Ge2 single crystals grown from Au-Ge;and Sn flux;PHYSICAL REVIEW B;86;21;214401;10.1103/PhysRevB.86.214401;DEC 3 2012;2012;The specific heat of CeAu2Ge2 single crystals grown from Au-Ge (AGF) or;Sn flux (SF) was measured at temperatures T between 1.8 and 200 K. Two;magnetic transitions are observed in the zero-field specific heat at;12.1 and 14.5 K in the AGF sample, while only a single sharp transition;at 9.2 K is seen in the SF sample, confirming our recent susceptibility;results [Fritsch et al., Phys. Rev. B 84, 104446 (2011)]. We observe;several field-induced transitions in the magnetoresistance of the AGF;sample measured at 1.6 and 2.3 K in accordance with the B-T phase;diagram constructed from isothermal magnetization curves M(B). In;addition, we have measured M(B) under hydrostatic pressure P up to 10.5;kbar. The Neel temperature T-N increases linearly with P at a small rate;of 0.049 K/kbar, which suggests that, if T-N(P) is attributed to a pure;volume effect, this compound is close to the maximum transition;temperature of the Doniach diagram. The transition fields B-M between;the field-induced phases increase linearly with P as well. The;comparable Gruneisen parameters of T-N and B-M indicate that the energy;scale depending on the sample's volume is given by the antiferromagnetic;correlations and not by the Kondo effect. We discuss possible reasons;for the different magnetic behavior of AGF and SF samples.;Huang, Chien-Lung/O-2028-2013;2;0;0;0;2;1098-0121;WOS:000311805500003;;;J;Jadczak, J.;Kubisa, M.;Ryczko, K.;Bryja, L.;Potemski, M.;High magnetic field spin splitting of excitons in asymmetric GaAs;quantum wells;PHYSICAL REVIEW B;86;24;245401;10.1103/PhysRevB.86.245401;DEC 3 2012;2012;Low-temperature photoluminescence from high-quality GaAs quantum wells,;asymmetrically doped with carbon, are investigated under high magnetic;fields (up to 20 T) directed along the [001] growth axis. At higher;fields, in the sigma(-) polarized emission, we observe two well-resolved;lines which are attributed to the recombination of neutral (X) and;charged (X+) excitons. In contrast, only the neutral exciton line is;observed for the sigma(+) polarization. From the difference of the X;line positions for the two polarizations we determine the effective;Zeeman splitting of neutral excitons and then the g factor g(h) of;confined holes. We find that g(h) depends substantially on the well size;and changes the sign at moderate magnetic fields. To explain the;experimental results, the valence Landau levels are calculated using the;Luttinger model beyond the axial approximation. We demonstrate that;mainly the excited hole levels contribute to the excitonic state at;higher magnetic fields. Due to their light-hole character, resulting;from the valence-band mixing, the excited hole states have a sizable;overlap with the electron states confined far from the doped barrier.;The calculated values of g(h) are in an excellent quantitative agreement;with the experimental data.;2;0;0;0;2;1098-0121;WOS:000311806500001;;;J;Lane, Nina J.;Vogel, Sven C.;Hug, Gilles;Togo, Atsushi;Chaput, Laurent;Hultman, Lars;Barsoum, Michel W.;Neutron diffraction measurements and first-principles study of thermal;motion of atoms in select M(n+1)AX(n) and binary MX transition-metal;carbide phases;PHYSICAL REVIEW B;86;21;214301;10.1103/PhysRevB.86.214301;DEC 3 2012;2012;Herein, we compare the thermal vibrations of atoms in select ternary;carbides with the formula M(n+1)AX(n) ("MAX phases," M = Ti, Cr; A = Al,;Si, Ge; X = C, N) as determined from first-principles phonon;calculations to those obtained from high-temperature neutron powder;diffraction studies. The transition metal carbides TiC, TaC, and WC are;also studied to test our methodology on simpler carbides. Good;qualitative and quantitative agreement is found between predicted and;experimental values for the binary carbides. For all the MAX phases;studied-Ti3SiC2, Ti3GeC2, Ti2AlN, Cr2GeC and Ti4AlN3-density functional;theory calculations predict that the A element vibrates with the highest;amplitude and does so anisotropically with a higher amplitude within the;basal plane, which is in line with earlier results from high-temperature;neutron diffraction studies. In some cases, there are quantitative;differences in the absolute values between the theoretical and;experimental atomic displacement parameters (ADPs), such as reversal of;anisotropy or a systematic offset of temperature-dependent ADPs. The;mode-dependent Gruneisen parameters are also computed to explore the;anharmonicity in the system.;Lujan Center, LANL/G-4896-2012;4;0;0;0;4;1098-0121;WOS:000311805500002;;;J;Niemann, R.;Baro, J.;Heczko, O.;Schultz, L.;Faehler, S.;Vives, E.;Manosa, L.;Planes, A.;Tuning avalanche criticality: Acoustic emission during the martensitic;transformation of a compressed Ni-Mn-Ga single crystal;PHYSICAL REVIEW B;86;21;214101;10.1103/PhysRevB.86.214101;DEC 3 2012;2012;The propagation of a phase front during a thermally induced martensitic;transition is discontinuous due to pinning at various defects, an effect;which results in acoustic emission. Here we analyze the consequences of;an applied compressive stress exemplarily on a Ni50.4Mn27.9Ga21.7 single;crystal. Our experiments show that the distribution of the energies of;the acoustic emission events follows a power law for more than three;decades. This indicates that the transition exhibits avalanche;criticality. The exponent characterizing the distribution of energies;depends on the applied stress, and decreases from 1.9 +/- 0.1 at zero;stress to 1.5 +/- 0.2 at stress above 3 MPa. This decrease could be;attributed to the reduced multiplicity of variants possible under;uniaxial compression.;Niemann, Robert/F-3634-2012; Schultz, Ludwig/B-3383-2010; Manosa, Lluis/D-8579-2014; Heczko, Oleg/G-9355-2014; Vives, Eduard/I-4821-2014;Manosa, Lluis/0000-0002-1182-2670; Vives, Eduard/0000-0002-5916-7214;4;0;0;0;4;1098-0121;WOS:000311805500001;;;J;Usui, Hidetomo;Suzuki, Katsuhiro;Kuroki, Kazuhiko;Minimal electronic models for superconducting BiS2 layers;PHYSICAL REVIEW B;86;22;220501;10.1103/PhysRevB.86.220501;DEC 3 2012;2012;We construct minimal electronic models for a newly discovered;superconductor LaO1-xFxBiS2 (T-c = 10.6 K) possessing BiS2 layers based;on a first-principles band calculation. First, we obtain a model;consisting of two Bi 6p and two S 3p orbitals, which give nearly;electron-hole symmetric bands. Further focusing on the bands that;intersect the Fermi level, we obtain a model with two p orbitals. The;two bands (per BiS2 layer) have a quasi-one-dimensional character with a;double minimum dispersion, which gives good nesting of the Fermi;surface. At around x similar to 0.5 the topology of the Fermi surface;changes, so that the density of states at the Fermi level becomes large.;Possible pairing states are discussed.;42;0;0;0;42;1098-0121;WOS:000311805700001;;;J;Cammarata, Antonio;Rondinelli, James M.;Spin-assisted covalent bond mechanism in "charge-ordering" perovskite;oxides;PHYSICAL REVIEW B;86;19;195144;10.1103/PhysRevB.86.195144;NOV 30 2012;2012;First-principles density functional calculations on the metal-insulator;transition (MIT) in perovskite CaFeO3 point to local ferromagnetic;coupling as the microscopic origin for the electronic "charge order";transition. Our atomic, electronic, and magnetic structure analyses;reveal that the MIT results from a spin-assisted covalent bonding;mechanism between the O 2p and Fe 3d states with anisotropic Fe-O bonds;and negligible intersite Fe-Fe charge transfer. We suggest that control;of the lattice distortions, which mediate the covalent bond formation,;in oxides containing late transition-metal row cations in high valence;states provides a platform to tailor electronic transitions.;Rondinelli, James/A-2071-2009; Cammarata, Antonio/A-4883-2014;Rondinelli, James/0000-0003-0508-2175; Cammarata,;Antonio/0000-0002-5691-0682;7;0;0;0;7;1098-0121;WOS:000311715000003;;;J;Clem, John R.;Kogan, V. G.;Kinetic impedance and depairing in thin and narrow superconducting films;PHYSICAL REVIEW B;86;17;174521;10.1103/PhysRevB.86.174521;NOV 30 2012;2012;We use both Eilenberger-Usadel and Ginzburg-Landau (GL) theory to;calculate the superfluid's temperature-dependent kinetic inductance for;all currents up to the depairing current in thin and narrow;superconducting films. The calculations apply to BCS weak-coupling;superconductors with isotropic gaps and transport mean-free paths much;less than the BCS coherence length. The kinetic inductance is calculated;for the response to a small alternating current when the film is;carrying a dc bias current. In the slow-experiment/fast-relaxation;limit, in which the superconducting order parameter quasistatically;follows the time-dependent current, the kinetic inductance diverges as;the bias current approaches the depairing value. However, in the;fast-experiment/slow-relaxiation limit, in which the the superconducting;order parameter remains fixed at a value corresponding to the dc bias;current, the kinetic inductance rises to a finite value at the depairing;current. We then use time-dependent GL theory to calculate the kinetic;impedance of the superfluid, which includes not only the kinetic;reactance, but also the kinetic resistance of the superfluid arising;from dissipation due to order-parameter relaxation. The kinetic;resistance is largest for angular frequencies omega obeying omega tau(s);> 1, where tau(s) is the order-parameter relaxation time, and for bias;currents close to the depairing current. We also include the normal;fluid's contribution to dissipation in deriving an expression for the;total kinetic impedance. The Appendices contain many details about the;temperature-dependent behavior of superconductors carrying current up to;the depairing value.;3;0;0;0;3;1098-0121;WOS:000311714600005;;;J;Cohn, J. L.;Boynton, P.;Trivino, J. S.;Trastoy, J.;White, B. D.;dos Santos, C. A. M.;Neumeier, J. J.;Stoichiometry, structure, and transport in the quasi-one-dimensional;metal Li0.9Mo6O17;PHYSICAL REVIEW B;86;19;195143;10.1103/PhysRevB.86.195143;NOV 30 2012;2012;A correlation between lattice parameters, oxygen composition, and the;thermoelectric and Hall coefficients is presented for single-crystal;Li0.9Mo6O17, a quasi-one-dimensional (Q1D) metallic compound. The;possibility that this compound is a compensated metal is discussed in;light of a substantial variability observed in the literature for these;transport coefficients.;1;0;0;0;1;1098-0121;WOS:000311715000002;;;J;Crepaldi, A.;Ressel, B.;Cilento, F.;Zacchigna, M.;Grazioli, C.;Berger, H.;Bugnon, Ph.;Kern, K.;Grioni, M.;Parmigiani, F.;Ultrafast photodoping and effective Fermi-Dirac distribution of the;Dirac particles in Bi2Se3;PHYSICAL REVIEW B;86;20;205133;10.1103/PhysRevB.86.205133;NOV 30 2012;2012;We exploit time- and angle-resolved photoemission spectroscopy to;determine the evolution of the out-of-equilibrium electronic structure;of the topological insulator Bi2Se3. The response of the Fermi-Dirac;distribution to ultrashort IR laser pulses has been studied by modeling;the dynamics of hot electrons after optical excitation. We disentangle a;large increase in the effective temperature (T*) from a shift of the;chemical potential (mu*), which is consequence of the ultrafast;photodoping of the conduction band. The relaxation dynamics of T* and;mu* are k independent and these two quantities uniquely define the;evolution of the excited charge population. We observe that the energy;dependence of the nonequilibrium charge population is solely determined;by the analytical form of the effective Fermi-Dirac distribution.;14;1;0;0;14;1098-0121;WOS:000311715100007;;;J;Dumlich, Heiko;Reich, Stephanie;Nanotube bundles and tube-tube orientation: A van der Waals density;functional study (vol 84, 064121, 2011);PHYSICAL REVIEW B;86;17;179905;10.1103/PhysRevB.86.179905;NOV 30 2012;2012;0;0;0;0;0;1098-0121;WOS:000311714600007;;;J;Fukutani, Keisuke;Hayashi, Hirokazu;Yakovkin, Ivan N.;Habuchi, Takafumi;Hirayama, Daisuke;Jiang, Jian;Iwasawa, Hideaki;Shimada, Kenya;Losovyj, Ya. B.;Dowben, Peter A.;Enhanced electron-phonon coupling at the Au/Mo(112) surface;PHYSICAL REVIEW B;86;20;205432;10.1103/PhysRevB.86.205432;NOV 30 2012;2012;A detailed investigation of the electronic structure and electron-phonon;coupling for a Au monolayer on the Mo(112) surface is presented. The;electronic states of bulk Mo and the (112) surface-derived states are;seen to strongly hybridize with those of the Au overlayer, resulting in;the formation of surface resonance states localized near the surface and;the interface of Au/Mo(112). The experimentally extracted self-energy;due to the electron-phonon coupling on one of the surface resonance;bands gives a good quantitative agreement with the calculations. The;strength of electron-phonon coupling for Au/Mo(112) is discussed in;terms of the mass enhancement factor and is considerably larger than for;the Mo(112) surface. Such an increase in the mass enhancement factor in;the vicinity of the Fermi level likely derives from the soft surface;phonon modes created upon Au adsorption.;2;0;0;0;2;1098-0121;WOS:000311715100011;;;J;Hamada, Ikutaro;Adsorption of water on graphene: A van der Waals density functional;study;PHYSICAL REVIEW B;86;19;195436;10.1103/PhysRevB.86.195436;NOV 30 2012;2012;The van der Waals density functional (vdW-DF) was used to investigate;the interaction of a water monomer with graphene. It was found that a;variant of vdW-DF [Hamada and Otani, Phys. Rev. B 82, 153412 (2010)];predicts geometries and energetics of water on graphene which are in;good agreement with those obtained using more elaborate random-phase;approximation and quantum Monte Carlo approaches. Interfacial electronic;structures were also analyzed in detail.;Hamada, Ikutaro/E-8040-2010;Hamada, Ikutaro/0000-0001-5112-2452;12;1;0;0;12;1098-0121;WOS:000311715000010;;;J;Hofmann, D.;Kuemmel, S.;Integer particle preference during charge transfer in Kohn-Sham theory;PHYSICAL REVIEW B;86;20;201109;10.1103/PhysRevB.86.201109;NOV 30 2012;2012;We investigate the static and dynamic charge transfer that is triggered;by external electric fields in model molecular wires. A self-interaction;correction in Kohn-Sham density functional theory leads to the desired;integer electron transfers that do not occur with standard functionals;which miss Coulomb blockade effects. Analysis of the multiplicative;exchange-correlation potential in stationary cases and during real-time;propagation shows how the local exchange-correlation potential builds up;step and reverse-step structures that enforce the integer particle;preference. The role of spin-symmetry breaking is discussed.;Kummel, Stephan/K-5634-2014;8;0;0;0;8;1098-0121;WOS:000311715100002;;;J;Illg, Christian;Meyer, Bernd;Faehnle, Manfred;Frequencies and polarization vectors of phonons: Results from force;constants which are fitted to experimental data or calculated ab initio;PHYSICAL REVIEW B;86;17;174309;10.1103/PhysRevB.86.174309;NOV 30 2012;2012;The properties of phonons may be calculated from the dynamical matrix;which is determined by force constants. Often the force constants are;obtained by fitting them to experimental phonon frequencies, e. g., for;wave vectors q on high-symmetry directions of the Brillouin zone. It is;well known that these force constants do not necessarily lead to correct;frequencies for wave vectors for nonsymmetrical q and to correct;polarization vectors. In the present paper this is demonstrated by;comparing for fcc Ni, fcc Al, and bcc Fe the frequencies and;polarization vectors calculated from fitted force constants with the;results from ab initio calculated force constants. However, for most;regions of the Brillouin zone the differences between the results;obtained from the two sets of force constants are not large.;1;0;0;0;1;1098-0121;WOS:000311714600003;;;J;Iori, Federico;Rodolakis, Fanny;Gatti, Matteo;Reining, Lucia;Upton, M.;Shvyd'ko, Y.;Rueff, Jean-Pascal;Marsi, Marino;Low-energy excitations in strongly correlated materials: A theoretical;and experimental study of the dynamic structure factor in V2O3;PHYSICAL REVIEW B;86;20;205132;10.1103/PhysRevB.86.205132;NOV 30 2012;2012;This work contains an experimental and theoretical study of the dynamic;structure factor at large momentum transfer vertical bar Q vertical bar;similar to 4 angstrom(-1) of the strongly correlated transition-metal;oxide V2O3. We focus in particular on the transitions between d states;that give rise to the spectra below 6 eV. We show that the main peak in;this energy range is mainly due to t(2g) -> e(g)(sigma) transitions, and;that it carries a signature of the phase transition between the;paramagnetic insulator and the paramagnetic metal that can already be;understood from the joint density of states calculated at the level of;the static local density approximation. Instead, in order to obtain;theoretical spectra that are overall similar to the measured ones, we;have to go beyond the static approximation and include at least crystal;local field effects. The latter turn out to be crucial in order to;eliminate a spurious peak and hence allow a safe comparison between;theory and experiment, including an analysis of the strong anisotropy of;the spectra.;CSIC-UPV/EHU, CFM/F-4867-2012; Iori, Federico/E-5372-2013; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Iori, Federico/0000-0002-7677-3435;;4;0;0;0;4;1098-0121;WOS:000311715100006;;;J;Kharitonov, Maxim;Antiferromagnetic state in bilayer graphene;PHYSICAL REVIEW B;86;19;195435;10.1103/PhysRevB.86.195435;NOV 30 2012;2012;Motivated by the recent experiment of Velasco Jr. et al. [J. Velasco Jr.;et al., Nat. Nanotechnology 7, 156 (2012)], we develop a mean-field;theory of the interaction-induced antiferromagnetic (AF) state in;bilayer graphene at charge neutrality point at arbitrary perpendicular;magnetic field B. We demonstrate that the AF state can persist at all B.;At higher B, the state continuously crosses over to the AF phase of the;nu = 0 quantum Hall ferromagnet, recently argued to be realized in the;insulating nu = 0 state. The mean-field quasiparticle gap is finite at B;= 0 and grows with increasing B, becoming quasilinear in the quantum;Hall regime, in accord with the reported behavior of the transport gap.;By adjusting the two free parameters of the model, we obtain a;simultaneous quantitative agreement between the experimental and;theoretical values of the key parameters of the gap dependence-its;zero-field value and slope at higher fields. Our findings suggest that;the insulating state observed in bilayer graphene in Ref. 1 is;antiferromagnetic (canted, once the Zeeman effect is taken into account);at all magnetic fields.;19;1;0;0;19;1098-0121;WOS:000311715000009;;;J;Klos, J. W.;Kumar, D.;Romero-Vivas, J.;Fangohr, H.;Franchin, M.;Krawczyk, M.;Barman, A.;Effect of magnetization pinning on the spectrum of spin waves in;magnonic antidot waveguides;PHYSICAL REVIEW B;86;18;184433;10.1103/PhysRevB.86.184433;NOV 30 2012;2012;We study the spin-wave spectra in magnonic antidot waveguides (MAWs) for;two limiting cases (strong and negligible) of the surface anisotropy at;the ferromagnet/air interface. The MAWs under investigation have the;form of a thin stripe of permalloy with a single row of periodically;arranged antidots in the middle. The introduction of a magnetization;pinning at the edges of the permalloy stripe and the edges of antidots;is found to modify the spin-wave spectrum. This effect is shown to be;necessary for magnonic gaps to open in the considered systems. Our study;demonstrates that the surface anisotropy can be crucial in the practical;applications of MAWs and related structures and in the interpretation of;experimental results in one-and two-dimensional magnonic crystals. We;used three different numerical methods, i.e., plane waves method (PWM),;finite difference method, and finite element method to validate the;results. We showed that PWM in the present formulation assumes pinned;magnetization, while in micromagnetic simulations special care must be;taken to introduce pinning.;Fangohr, Hans/C-6367-2008; Klos, Jaroslaw/G-9728-2012;Fangohr, Hans/0000-0001-5494-7193; Klos, Jaroslaw/0000-0002-5858-2950;13;2;0;0;13;1098-0121;WOS:000311714700002;;;J;Kolata, K.;Koester, N. S.;Chernikov, A.;Drexler, M. J.;Gatti, E.;Cecci, S.;Chrastina, D.;Isella, G.;Guzzi, M.;Chatterjee, S.;Dephasing in Ge/SiGe quantum wells measured by means of coherent;oscillations;PHYSICAL REVIEW B;86;20;201303;10.1103/PhysRevB.86.201303;NOV 30 2012;2012;We present a dephasing time analysis of the excitonic resonances in;Ge/SiGe quantum wells for various lattice temperatures by coherent;oscillation spectroscopy (COS). The results are compared to the;linewidths of the excitonic resonances determined from linear absorption;measurements. Additionally, COS is applied to different samples with;varying linewidth, identifying one sample with a dominating;homogeneously broadened 1s excitonic resonance down to 7 K.;Chatterjee, Sangam/E-3124-2012;2;0;0;0;2;1098-0121;WOS:000311715100003;;;J;Lang, Li-Jun;Chen, Shu;Majorana fermions in density-modulated p-wave superconducting wires;PHYSICAL REVIEW B;86;20;205135;10.1103/PhysRevB.86.205135;NOV 30 2012;2012;We study the p-wave superconducting wire with a periodically modulated;chemical potential and show that the Majorana edge states are robust;against the periodic modulation. We find that the critical amplitude of;modulated potential, at which the Majorana edge fermions and topological;phase disappear, strongly depends on the phase shifts. For some specific;values of the phase shift, the critical amplitude tends to infinity. The;existence of Majorana edge fermions in the open chain can be;characterized by a topological Z(2) invariant of the bulk system, which;can be applied to determine the phase boundary between the topologically;trivial and nontrivial superconducting phases. We also demonstrate the;existence of the zero-energy peak in the spectral function of the;topological superconducting phase, which is only sensitive to the open;boundary condition but robust against the disorder.;Lang, Li-Jun/C-2815-2014;Lang, Li-Jun/0000-0001-6038-8340;11;0;0;0;11;1098-0121;WOS:000311715100009;;;J;Lazicki, Amy;Dewaele, Agnes;Loubeyre, Paul;Mezouar, Mohamed;High-pressure-temperature phase diagram and the equation of state of;beryllium;PHYSICAL REVIEW B;86;17;174118;10.1103/PhysRevB.86.174118;NOV 30 2012;2012;X-ray diffraction of beryllium in a laser-heated diamond anvil cell;provides experimental insight into its behavior at high pressure and;temperature. We measure the cold compression of Be in helium and NaCl;pressure media up 192 GPa, and its thermal expansion up to 82 GPa and;2630 K. The new measurements form a P-V-T data set which is fit by the;Vinet-Debye form to establish a Be experimental equation of state. We;compare the results to several theoretical models. The crystal structure;of Be is determined up to 205 GPa and 4000 K; no evidence for the;predicted high-temperature transition to a cubic phase is found.;Finally, the maximum temperature stability of the solid phase along;isobaric heating ramps gives a lower bound for the melting curve.;5;0;0;0;5;1098-0121;WOS:000311714600002;;;J;Li, J.;Ekuma, C. E.;Vekhter, I.;Jarrell, M.;Moreno, J.;Stadler, S.;Karki, A. B.;Jin, R.;Physical properties of Ba2Mn2Sb2O single crystals;PHYSICAL REVIEW B;86;19;195142;10.1103/PhysRevB.86.195142;NOV 30 2012;2012;We report both experimental and theoretical investigations of the;physical properties of Ba2Mn2Sb2O single crystals. This material;exhibits a hexagonal structure with lattice constants a = 4.7029(15) A;and c = 19.9401(27) A, as obtained from powder x-ray diffraction;measurements, and in agreement with structural optimization through;density functional theory (DFT) calculations. The magnetic;susceptibility and specific heat show anomalies at T-N = 60 K,;consistent with antiferromagnetic ordering. However, the magnitude of;T-N is significantly smaller than the Curie-Weiss temperature (vertical;bar Theta(CW)vertical bar approximate to 560 K), suggesting a magnetic;system of reduced dimensionality. The temperature dependence of both the;in-plane and out-of-plane resistivity changes from activated at T > T-x;similar to 200 K to logarithmic at T < T-x. Correspondingly, the;magnetic susceptibility displays a bump at T-x. DFT calculations at the;DFT + U level support the experimental observation of an;antiferromagnetic ground state.;Vekhter, Ilya/M-1780-2013; Moreno, Juana/D-5882-2012;0;0;0;0;0;1098-0121;WOS:000311715000001;;;J;Mafra, D. L.;Kong, J.;Sato, K.;Saito, R.;Dresselhaus, M. S.;Araujo, P. T.;Using gate-modulated Raman scattering and electron-phonon interactions;to probe single-layer graphene: A different approach to assign phonon;combination modes;PHYSICAL REVIEW B;86;19;195434;10.1103/PhysRevB.86.195434;NOV 30 2012;2012;Gate-modulated and laser-dependent Raman spectroscopy have been widely;used to study q = 0 zone center phonon modes, their self-energy, and;their coupling to electrons in graphene systems. In this work we use;gate-modulated Raman of q not equal 0 phonons as a technique to;understand the nature of five second-order Raman combination modes;observed in the frequency range of 1700-2300 cm(-1) of single-layer;graphene (SLG). Anomalous phonon self-energy renormalization phenomena;are observed in all five combination modes within this intermediate;frequency region, which can clearly be distinguished from one another.;By combining the anomalous phonon renormalization effect with the double;resonance Raman theory, which includes both phonon dispersion relations;and angular dependence of the electron-phonon scattering matrix;elements, and by comparing it to the experimentally obtained phonon;dispersion, measured by using different laser excitation energies, we;can assign each Raman peak to the proper phonon combination mode. This;approach should also shed light on the understanding of more complex;structures such as few-layer graphene (FLG) and its stacking orders as;well as other two-dimensional (2D)-like materials.;Sato, Kentaro/B-7163-2008; Saito, Riichiro/B-1132-2008;Sato, Kentaro/0000-0001-6706-2175;;5;2;1;0;5;1098-0121;WOS:000311715000008;;;J;Mazza, Giacomo;Fabrizio, Michele;Dynamical quantum phase transitions and broken-symmetry edges in the;many-body eigenvalue spectrum;PHYSICAL REVIEW B;86;18;184303;10.1103/PhysRevB.86.184303;NOV 30 2012;2012;Many-body models undergoing a quantum phase transition to a;broken-symmetry phase that survives up to a critical temperature must;possess, in the ordered phase, symmetric as well as nonsymmetric;eigenstates. We predict, and explicitly show in the fully connected;Ising model in a transverse field, that these two classes of eigenstates;do not overlap in energy, and therefore that an energy edge exists;separating low-energy symmetry-breaking eigenstates from high-energy;symmetry-invariant ones. This energy is actually responsible, as we;show, for the dynamical phase transition displayed by this model under a;sudden large increase of the transverse field. A second situation we;consider is the opposite, where the symmetry-breaking eigenstates are;those in the high-energy sector of the spectrum, whereas the low-energy;eigenstates are symmetric. In that case too a special energy must exist;marking the boundary and leading to unexpected out-of-equilibrium;dynamical behavior. An example is the fermonic repulsive Hubbard model;Hamiltonian H. Exploiting the trivial fact that the high-energy spectrum;of H is also the low-energy one of -H, we conclude that the high-energy;eigenstates of the Hubbard model are superfluid. Simulating in a;time-dependent Gutzwiller approximation the time evolution of a;high-energy BCS-like trial wave function, we show that a small;superconducting order parameter will actually grow in spite of the;repulsive nature of the interaction.;fabrizio, michele/N-3762-2014;2;0;0;0;2;1098-0121;WOS:000311714700001;;;J;Mueller, T.;Aharonovich, I.;Wang, Z.;Yuan, X.;Castelletto, S.;Prawer, S.;Atatuere, M.;Phonon-induced dephasing of chromium color centers in diamond;PHYSICAL REVIEW B;86;19;195210;10.1103/PhysRevB.86.195210;NOV 30 2012;2012;We report on the coherence properties of single photons from;chromium-based color centers in diamond. We use field-correlation and;spectral line-shape measurements to reveal the interplay between slow;spectral wandering and fast dephasing mechanisms as a function of;temperature. The zero-phonon transition frequency and its linewidth;follow a power-law dependence on temperature, which is consistent with;direct electron-phonon coupling and phonon-modulated Coulomb coupling to;nearby impurities, which are the predominant fast dephasing mechanisms;for these centers. Further, the observed reduction in the quantum yield;for photon emission as a function of temperature suggests the opening of;additional nonradiative channels through thermal activation to;higher-energy states and indicates a near-unity quantum efficiency at 4;K.;castelletto, stefania/G-1516-2011; McKenzie, Warren/J-2137-2014;3;0;0;0;3;1098-0121;WOS:000311715000007;;;J;Murthy, Ganpathy;Shankar, R.;Hamiltonian theory of fractionally filled Chern bands;PHYSICAL REVIEW B;86;19;195146;10.1103/PhysRevB.86.195146;NOV 30 2012;2012;There is convincing numerical evidence that fractional quantum-Hall-like;ground states arise in fractionally filled Chern bands. Here, we show;that the Hamiltonian theory of composite fermions (CF) can be as useful;in describing these states as it was in describing the fractional;quantum Hall effect (FQHE) in the continuum. We are able to introduce;CFs into the fractionally filled Chern-band problem in two stages.;First, we construct an algebraically exact mapping which expresses the;electron density projected to the Chern band rho(FCB) as a sum of;Girvin-MacDonald-Platzman density operators rho(GMP) that obey the;magnetic translation algebra. Next, following our Hamiltonian treatment;of the FQH problem, we rewrite the operators rho(GMP) in terms of CF;variables which reproduce the same algebra. This naturally produces a;unique Hartree-Fock ground state for the CFs, which can be used as a;springboard for computing gaps, response functions,;temperature-dependent phenomena, and the influence of disorder. We give;two concrete examples, one of which has no analog in the continuum FQHE;with nu = 1/5 and sigma(xy) = 2/5. Our approach can be easily extended;to fractionally filled, strongly interacting two-dimensional;time-reversal-invariant topological insulators.;15;0;0;0;15;1098-0121;WOS:000311715000005;;;J;Ovsyannikov, Sergey V.;Morozova, Natalia V.;Karkin, Alexander E.;Shchennikov, Vladimir V.;High-pressure cycling of hematite alpha-Fe2O3: Nanostructuring, in situ;electronic transport, and possible charge disproportionation;PHYSICAL REVIEW B;86;20;205131;10.1103/PhysRevB.86.205131;NOV 30 2012;2012;We studied electronic transport properties of hematite (alpha-Fe2O3) at;room temperature under cycling of high pressure up to similar to 22 GPa.;The original samples and those recovered after high-pressure experiments;were examined by x-ray diffraction and Raman and optical absorption;spectroscopy. At ambient pressure the original samples were also;characterized by temperature measurements of electrical and;galvanomagnetic properties. Upon compression, the original single;crystals underwent a sluggish structural deconfinement starting above 5;GPa into a nanometric state. Above 5-7 GPa, the nanostructured hematite;showed a reversible transition to a state with enhanced electrical;conductivity and moderate values of thermoelectric power (Seebeck;effect) of about -150 mu V/K. This electronic phase corresponds to;neither conventional trivalent oxidation state of the iron ions in;hematite nor metallic conductivity. Analysis of the electronic transport;data in the frameworks of two models, of polaron hopping, and of;intrinsic semiconductor conductivity, revealed a change from the;electron conductivity to two-band electrical conductivity and suggested;that the observed enhancement of the electrical properties in;nanocrystalline alpha-Fe2O3 above 5-7 GPa is related to the;mixed-valence state of the iron ions. Since alpha-Fe2O3 is believed to;undergo a "spin-flop" (Morin) transition near 2-5 GPa at room;temperature, we discuss potential contributions of magnetoelastic and;other effects to the observed high-pressure properties of hematite.;Ovsyannikov, Sergey/J-7802-2012; Morozova, Natalia/J-3568-2013; Karkin, Alexander/J-6712-2013; Shchennikov, Vladimir/J-8533-2013;Morozova, Natalia/0000-0002-2377-1372; Karkin,;Alexander/0000-0003-0464-4762; Shchennikov, Vladimir/0000-0003-2887-1652;4;0;0;0;4;1098-0121;WOS:000311715100005;;;J;Pielawa, Susanne;Berg, Erez;Sachdev, Subir;Frustrated quantum Ising spins simulated by spinless bosons in a tilted;lattice: From a quantum liquid to antiferromagnetic order;PHYSICAL REVIEW B;86;18;184435;10.1103/PhysRevB.86.184435;NOV 30 2012;2012;We study spinless bosons in a decorated square lattice with a;near-diagonal tilt. The resonant subspace of the tilted Mott insulator;is described by an effective Hamiltonian of frustrated quantum Ising;spins on a nonbipartite lattice. This generalizes an earlier proposal;for the unfrustrated quantum Ising model in one dimension which was;realized in a recent experiment on ultracold Rb-87 atoms in an optical;lattice. Very close to diagonal tilt, we find a quantum liquid state;which is continuously connected to the paramagnet. Frustration can be;reduced by increasing the tilt angle away from the diagonal, and the;system undergoes a transition to an antiferromagnetically ordered state.;Using quantum Monte Carlo simulations and exact diagonalization, we find;that for realistic system sizes the antiferromagnetic order appears to;be quasi-one-dimensional, however, in the thermodynamic limit the order;is two-dimensional.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;1;0;0;0;1;1098-0121;WOS:000311714700004;;;J;Popov, V. V.;Polischuk, O. V.;Davoyan, A. R.;Ryzhii, V.;Otsuji, T.;Shur, M. S.;Plasmonic terahertz lasing in an array of graphene nanocavities;PHYSICAL REVIEW B;86;19;195437;10.1103/PhysRevB.86.195437;NOV 30 2012;2012;We propose a novel concept of terahertz lasing based on stimulated;generation of plasmons in a planar array of graphene resonant;micro/nanocavities strongly coupled to terahertz radiation. Due to the;strong plasmon confinement and superradiant nature of terahertz emission;by the array of plasmonic nanocavities, the amplification of terahertz;waves is enhanced by many orders of magnitude at the plasmon resonance;frequencies. We show that the lasing regime is ensured by the balance;between the plasmon gain and plasmon radiative damping.;Davoyan, Artur/K-8567-2013;Davoyan, Artur/0000-0002-4662-1158;15;0;0;0;15;1098-0121;WOS:000311715000011;;;J;Romanov, Sergei G.;Vogel, Nicolas;Bley, Karina;Landfester, Katharina;Weiss, Clemens K.;Orlov, Sergej;Korovin, Alexander V.;Chuiko, Gennady P.;Regensburger, Alois;Romanova, Alexandra S.;Kriesch, Arian;Peschel, Ulf;Probing guided modes in a monolayer colloidal crystal on a flat metal;film;PHYSICAL REVIEW B;86;19;195145;10.1103/PhysRevB.86.195145;NOV 30 2012;2012;Two-dimensional slab hybrid metal-dielectric photonic crystals, which;are prepared by assembling polymer colloidal spheres into closely packed;monolayers of hexagonal symmetry on a gold-coated glass substrate, show;an improved confinement of light compared with a colloidal monolayer on;a glass substrate. We demonstrated that the optical response of such;hybrid crystals consists of diffractively coupled waveguiding modes,;Fabry-Perot resonances, and Mie resonances. Correspondingly, two major;mechanisms, namely, band transport and hopping of localized excitations,;participate in the in-plane light transport in such hybrid crystals.;Weiss, Clemens/C-9932-2009; Peschel, Ulf/C-3356-2013; Romanov, Sergei/H-6868-2013; Kriesch, Arian/A-7337-2011;Weiss, Clemens/0000-0001-8559-0385; Romanov, Sergei/0000-0003-0546-9505;;Kriesch, Arian/0000-0002-8347-0344;6;1;0;0;6;1098-0121;WOS:000311715000004;;;J;Schoop, Leslie;Muechler, Lukas;Schmitt, Jennifer;Ksenofontov, Vadim;Medvedev, Sergey;Nuss, Juergen;Casper, Frederick;Jansen, Martin;Cava, R. J.;Felser, Claudia;Effect of pressure on superconductivity in NaAlSi;PHYSICAL REVIEW B;86;17;174522;10.1103/PhysRevB.86.174522;NOV 30 2012;2012;The ternary superconductor NaAlSi, isostructural with LiFeAs, the "111";iron pnictide superconductor, is investigated under pressure. The;structure remains stable up to 15 GPa. Resistivity and susceptibility;measurements show an increase of T-c up to 2 GPa, followed by a decrease;until superconductivity disappears at 4.8 GPa. Band structure;calculations show that pressure should have a negligible effect on the;electronic structure and the Fermi surface and thus the disappearance of;superconductivity under pressure must have a different origin. We;compare the electronic structure of NaAlSi under pressure with that of;nonsuperconducting isostructural NaAlGe.;Felser, Claudia/A-5779-2009; Casper, Frederick/A-5782-2009; Nuss, Juergen/G-2711-2010; Muchler, Lukas/A-4628-2013; Schoop, Leslie/A-4627-2013;Nuss, Juergen/0000-0002-0679-0184; Schoop, Leslie/0000-0003-3459-4241;1;0;0;0;1;1098-0121;WOS:000311714600006;;;J;Schwier, E. F.;Scherwitzl, R.;Vydrova, Z.;Garcia-Fernandez, M.;Gibert, M.;Zubko, P.;Garnier, M. G.;Triscone, J. -M.;Aebi, P.;Unusual temperature dependence of the spectral weight near the Fermi;level of NdNiO3 thin films;PHYSICAL REVIEW B;86;19;195147;10.1103/PhysRevB.86.195147;NOV 30 2012;2012;We investigate the behavior of the spectral weight near the Fermi level;of NdNiO3 thin films as a function of temperature across the;metal-to-insulator transition (MIT) by means of ultraviolet;photoelectron spectroscopy. The spectral weight was found to exhibit;thermal hysteresis, similar to that of the dc conductivity. A detailed;analysis of the temperature dependence reveals two distinct regimes of;spectral loss close to the Fermi level. The temperature evolution of one;regime is found to be independent of the MIT.;Garcia-Fernandez, Mirian/B-6018-2013; Zubko, Pavlo/B-5496-2009;Zubko, Pavlo/0000-0002-7330-3163;2;0;0;0;2;1098-0121;WOS:000311715000006;;;J;Sen, Arnab;Damle, Kedar;Moessner, R.;Vacancy-induced spin textures and their interactions in a classical spin;liquid;PHYSICAL REVIEW B;86;20;205134;10.1103/PhysRevB.86.205134;NOV 30 2012;2012;Motivated by experiments on the archetypal frustrated magnet;SrCr9pGa12-9pO19 (SCGO), we study the classical Heisenberg model on the;pyrochlore slab (kagome bilayer) lattice with site dilution x = 1 - p.;This allows us to address generic aspects of the physics of nonmagnetic;vacancies in a classical spin liquid. We explicitly demonstrate that the;pure (x = 0) system remains a spin liquid down to the lowest;temperatures, with an unusual nonmonotonic temperature dependence of the;susceptibility, which even turns diamagnetic for the apical spins;between the two kagome layers. For x > 0 but small, the low-temperature;magnetic response of the system is most naturally described in terms of;the properties of spatially extended spin textures that cloak an;"orphan" S = 3/2 Cr3+ spin in direct proximity to a pair of missing;sites belonging to the same triangular simplex. In the T -> 0 limit,;these orphan-texture complexes each carry a net magnetization that is;exactly half the magnetic moment of an individual spin of the undiluted;system. Furthermore, we demonstrate that they interact via an entropic;temperature-dependent pairwise exchange interaction J(eff) (T,(r) over;right arrow) similar to T J ((r) over right arrow root T) that has a;logarithmic form at short distances and decays exponentially beyond a;thermal correlation length xi(T) similar to 1/root T. The sign of J(eff);depends on whether the two orphan spins belong to the same kagome layer;or not. We provide a detailed analytical account of these properties;using an effective field theory approach specifically tailored for the;problem at hand. These results are in quantitative agreement with;large-scale Monte Carlo numerics.;3;1;0;0;3;1098-0121;WOS:000311715100008;;;J;Solanki, Ravindra Singh;Mishra, S. K.;Senyshyn, Anatoliy;Ishii, I.;Moriyoshi, Chikako;Suzuki, Takashi;Kuroiwa, Yoshihiro;Pandey, Dhananjai;Antiferrodistortive phase transition in pseudorhombohedral;(Pb0.94Sr0.06)( Zr0.550Ti0.450)O-3: A combined synchrotron x-ray and;neutron powder diffraction study;PHYSICAL REVIEW B;86;17;174117;10.1103/PhysRevB.86.174117;NOV 30 2012;2012;The controversies about the structure of the true ground state of;pseudorhombohedral compositions of Pb(ZrxTi1-x)O-3 (PZT) are addressed;using a 6% Sr2+ substituted sample with x = 0.550. Sound velocity;measurements reveal a phase transition at T-c similar to 279 K. The;temperature dependence of full width at half maximum of (h00)(pc) peaks;and the unit cell volume also show anomalies around 279 K even though;there is no indication of any change of space group in the synchrotron;x-ray powder diffraction (SXRD) patterns. The neutron powder diffraction;patterns reveal appearance of superlattice peaks below T-c similar to;279 K, confirming the existence of an antiferrodistortive phase;transition. The Rietveld analysis of the room-temperature and;low-temperature SXRD data below T-c shows that the structure corresponds;to single monoclinic phase in the Cm space group while the analysis of;neutron powder diffraction data reveals that the structure of the;ground-state phase below T-c corresponds to the Cc space group. Our;analysis shows that the structural models for the ground-state phase;based on the R3c space group with or without the coexistence of the;room-temperature monoclinic phase in the Cm space group can be rejected.;SOLANKI, RAVINDRA /H-7221-2013; Senyshyn, Anatoliy/C-8267-2014;Senyshyn, Anatoliy/0000-0002-1473-8992;3;0;0;0;3;1098-0121;WOS:000311714600001;;;J;Steinke, N. -J.;Moore, T. A.;Mansell, R.;Bland, J. A. C.;Barnes, C. H. W.;Nonuniversal dynamic magnetization reversal in the Barkhausen-dominated;and mesofrequency regimes;PHYSICAL REVIEW B;86;18;184434;10.1103/PhysRevB.86.184434;NOV 30 2012;2012;Dynamic magnetization reversal in the mesofrequency range is studied by;ac magneto-optical Kerr effect (ac-MOKE) and ac anisotropic;magnetoresistance (ac-AMR) magnetometry in a series of epitaxial and;polycrystalline thin magnetic films. The dynamic coercive field was;found to scale as a power law with scaling exponents <= 1/2 depending on;the ferromagnetic material. In addition, there is a low sweep rate;regime in which the dynamic coercivity reaches a minimum. These findings;are explained in the context of reversal proceeding by motion of a few;domain walls (similar to 1). At dc and low field sweep rates the;reversal proceeds between local pinning sites via Barkhausen avalanches;and the overall reversal speed is strongly dependent on the field sweep;rate. At higher field sweep rates a continuous motion regime is entered;in which the reversal velocity depends linearly on the applied field;sweep rate and only an average pinning force is experienced by the wall.;The fit of the dynamic coercivity vs applied field sweep rate allows the;determination of the average nonlocal pinning field. The nonuniversal;scaling exponent can be explained using recently developed models and;introducing a field rate-dependent number of active domain walls.;Mansell, Rhodri/A-1450-2013;2;0;0;0;2;1098-0121;WOS:000311714700003;;;J;Stoffel, M.;Fagot-Revurat, Y.;Tejeda, A.;Kierren, B.;Nicolaou, A.;Le Fevre, P.;Bertran, F.;Taleb-Ibrahimi, A.;Malterre, D.;Electron-phonon coupling on strained Ge/Si(111)-(5x5) surfaces;PHYSICAL REVIEW B;86;19;195438;10.1103/PhysRevB.86.195438;NOV 30 2012;2012;We investigate the structural and electronic properties of strained;Ge/Si(111)-(5 x 5) surfaces by means of scanning tunneling microscopy;and high-resolution angle-resolved photoemission spectroscopy. The;homogeneous (5 x 5) reconstructed overlayers are characterized by three;electronic surface states, similar to the Si(111)-(7 x 7) surface. The;dispersion of the dangling bond related surface state exhibits the same;periodicity as that of the (5 x 5) reconstruction. Moreover, a careful;analysis of the shape and width of this surface state provides striking;evidence of electron-phonon coupling at low temperatures. By considering;the spectral function within a simple Debye model, we determine both the;Debye energy and the electron-phonon coupling strength. The latter value;is further confirmed by analyzing the temperature-dependent phonon;broadening of the dangling bond related surface state linewidth.;BERTRAN, Francois/B-7515-2008; Tejeda, Antonio/C-4711-2014;BERTRAN, Francois/0000-0002-2416-0514; Tejeda,;Antonio/0000-0003-0125-4603;1;0;0;0;1;1098-0121;WOS:000311715000012;;;J;Turek, I.;Kudrnovsky, J.;Carva, K.;Magnetic anisotropy energy of disordered tetragonal Fe-Co systems from;ab initio alloy theory;PHYSICAL REVIEW B;86;17;174430;10.1103/PhysRevB.86.174430;NOV 30 2012;2012;We present results of systematic fully relativistic first-principles;calculations of the uniaxial magnetic anisotropy energy (MAE) of a;disordered and partially ordered tetragonal Fe-Co alloy using the;coherent potential approximation (CPA). This alloy has recently become a;promising system for thin ferromagnetic films with a perpendicular;magnetic anisotropy. We find that existing theoretical approaches to;homogeneous random bulk Fe-Co alloys, based on a simple virtual crystal;approximation (VCA), overestimate the maximum MAE values obtained in the;CPA by a factor of 4. This pronounced difference is ascribed to the;strong disorder in the minority spin channel of real alloys, which is;neglected in the VCA and which leads to a broadening of the d-like;eigenstates at the Fermi energy and to the reduction of the MAE. The;ordered Fe-Co alloys with a maximum L1(0)-like atomic long-range order;can exhibit high values of the MAE, which, however, get dramatically;reduced by small perturbations of the perfect order.;Carva, Karel/A-3703-2008; Turek, Ilja/G-5553-2014; KUDRNOVSKY, Josef/G-5581-2014;KUDRNOVSKY, Josef/0000-0002-9968-6748;10;0;0;0;10;1098-0121;WOS:000311714600004;;;J;Uppstu, Andreas;Harju, Ari;High-field magnetoresistance revealing scattering mechanisms in graphene;PHYSICAL REVIEW B;86;20;201409;10.1103/PhysRevB.86.201409;NOV 30 2012;2012;We show that the type of charge carrier scattering significantly affects;the high-field magnetoresistance of graphene nanoribbons. This effect;has the potential to be used in identifying the scattering mechanisms in;graphene. The results also provide an explanation for the experimentally;found, intriguing differences in the behavior of the magnetoresistance;of graphene Hall bars placed on different substrates. Additionally, our;simulations indicate that the peaks in the longitudinal resistance tend;to become pinned to fractionally quantized values, as different;transport modes have very different scattering properties.;Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;1;0;0;0;1;1098-0121;WOS:000311715100004;;;J;White, Alexander J.;Sukharev, Maxim;Galperin, Michael;Molecular nanoplasmonics: Self-consistent electrodynamics in;current-carrying junctions;PHYSICAL REVIEW B;86;20;205324;10.1103/PhysRevB.86.205324;NOV 30 2012;2012;We consider a biased molecular junction subjected to an external;time-dependent electromagnetic field. We discuss local field formation;due to both surface plasmon-polariton excitations in the contacts and;the molecular response. Employing realistic parameters we demonstrate;that such self-consistent treatment is crucial for the proper;description of the junction transport characteristics.;White, Alexander/D-8754-2014;White, Alexander/0000-0002-7771-3899;3;0;0;0;3;1098-0121;WOS:000311715100010;;;J;Wierschem, Keola;Kato, Yasuyuki;Nishida, Yusuke;Batista, Cristian D.;Sengupta, Pinaki;Magnetic and nematic orderings in spin-1 antiferromagnets with;single-ion anisotropy;PHYSICAL REVIEW B;86;20;201108;10.1103/PhysRevB.86.201108;NOV 30 2012;2012;We study a spin-1 Heisenberg model with exchange interaction J, uniaxial;single-ion exchange anisotropy D, and Zeeman coupling to a magnetic;field B parallel to the symmetry axis. We compute the (D/J, B/J) quantum;phase diagram for square and simple cubic lattices by combining;analytical and quantum Monte Carlo approaches, and find a transition;between XY antiferromagnetic and ferronematic phases that spontaneously;break the U(1) symmetry of the model. In the language of bosonic gases,;this is a transition between a Bose-Einstein condensate (BEC) of single;bosons and a BEC of pairs. Our work opens up new avenues for measuring;this transition in real magnets.;8;0;0;0;8;1098-0121;WOS:000311715100001;;;J;Wu, Chien-Te;Valls, Oriol T.;Halterman, Klaus;Proximity effects in conical-ferromagnet/superconductor bilayers;PHYSICAL REVIEW B;86;18;184517;10.1103/PhysRevB.86.184517;NOV 30 2012;2012;We present a study of various aspects of proximity effects in F/S;(ferromagnet/superconductor) bilayers, where F has a spiral magnetic;texture such as that found in holmium, erbium, and other materials, and;S is a conventional s-wave superconductor. We numerically solve the;Bogoliubov-de Gennes (BdG) equations self-consistently and use the;solutions to compute physical quantities relevant to the proximity;effects in these bilayers. We obtain the relation between the;superconducting transition temperature T-c and the thicknesses d(F) of;the magnetic layer by solving the linearized BdG equations. We find that;the T-c (d(F)) curves include multiple oscillations. Moreover, the;system may be reentrant not only with d(F), as is the case when the;magnet is uniform, but also with temperature T : the superconductivity;disappears in certain ranges of d(F) or T. The T reentrance reported;here occurs when d(F) is larger than the spatial period of the conical;exchange field. We compute the condensation free energies and entropies;from the full BdG equations and find the results are in agreement with;T-c values obtained by linearization. The inhomogeneous nature of the;magnet makes it possible for all odd triplet pairing components to be;induced. We have investigated their properties and found that, as;compared to the singlet amplitude, both the m = 0 and +/- 1 triplet;components exhibit long-range penetration. For nanoscale bilayers, the;proximity lengths for both layers are also obtained. These lengths;oscillate with d(F) and they are found to be long range on both sides.;These results are shown to be consistent with recent experiments. We;also calculate the reverse proximity effect described by the;three-dimensional local magnetization, and the local density of states,;which reveals important energy-resolved signatures associated with the;proximity effects.;6;0;0;0;6;1098-0121;WOS:000311714700005;;;J;Altarelli, M.;Kurta, R. P.;Vartanyants, I. A.;X-ray cross-correlation analysis and local symmetries of disordered;systems: General theory (vol 82, 104207, 2010);PHYSICAL REVIEW B;86;17;179904;10.1103/PhysRevB.86.179904;NOV 29 2012;2012;1;0;0;0;1;1098-0121;WOS:000311693600006;;;J;Beheshtian, J.;Sadeghi, A.;Neek-Amal, M.;Michel, K. H.;Peeters, F. M.;Induced polarization and electronic properties of carbon-doped boron;nitride nanoribbons;PHYSICAL REVIEW B;86;19;195433;10.1103/PhysRevB.86.195433;NOV 29 2012;2012;The electronic properties of boron nitride nanoribbons (BNNRs) doped;with a line of carbon atoms are investigated using density functional;calculations. By replacing a line of alternating B and N atoms with;carbons, three different configurations are possible depending on the;type of the atoms which bond to the carbons. We found very different;electronic properties for these configurations: (i) the NCB arrangement;is strongly polarized with a large dipole moment having an unexpected;direction, (ii) the BCB and NCN arrangements are nonpolar with zero;dipole moment, (iii) the doping by a carbon line reduces the band gap;regardless of the local arrangement of the borons and the nitrogens;around the carbon line, and (iv) the polarization and energy gap of the;carbon-doped BNNRs can be tuned by an electric field applied parallel to;the carbon line. Similar effects were found when either an armchair or;zigzag line of carbon was introduced.;Sadeghi, Ali/D-1554-2013;8;0;0;0;8;1098-0121;WOS:000311694200006;;;J;Chi, Hang;Kim, Hyoungchul;Thomas, John C.;Su, Xianli;Stackhouse, Stephen;Kaviany, Massoud;Van der Ven, Anton;Tang, Xinfeng;Uher, Ctirad;Configuring pnicogen rings in skutterudites for low phonon conductivity;PHYSICAL REVIEW B;86;19;195209;10.1103/PhysRevB.86.195209;NOV 29 2012;2012;Dominant heat-carrying modes in skutterudites are associated with;vibrations of the pnicogen rings. Apart from filling the structural;cages with foreign species, disrupting the pnicogen ring structure by;substitutional alloying should be an effective approach to reduce;thermal conductivity. In this paper we explore alloying configurations;of pnicogen rings (Sb rings in the case of CoSb3) that yield;particularly low values of the thermal conductivity. We find that IV-VI;double substitution (replacing two Sb atoms with one atom each from the;column IV and column VI elements to achieve an average charge of two Sb;atoms) is a very effective approach. Our ab initio calculations, in;combination with a cluster expansion, have allowed us to identify stable;alloy configurations on the Sb rings. Subsequent molecular and lattice;dynamics simulations on low energy configurations establish the range of;atomic displacement parameters and values of the thermal conductivity.;Theoretical results are in good agreement with our experimental thermal;conductivity values. Combining both approaches of compensated double;substitution and filling of structural cages should be an effective way;of improving the thermoelectric figure of merit of skutterudites.;Su, Xianli/A-9685-2012; Chi, Hang/F-1537-2011; Thomas, John/A-2764-2009; Kim, Hyoungchul/F-2557-2014;Chi, Hang/0000-0002-1299-1150; Thomas, John/0000-0002-3162-0152; Kim,;Hyoungchul/0000-0003-3109-660X;8;0;0;0;8;1098-0121;WOS:000311694200003;;;J;Fortmann, C.;Niemann, C.;Glenzer, S. H.;Theory of x-ray scattering in high-pressure electrides;PHYSICAL REVIEW B;86;17;174116;10.1103/PhysRevB.86.174116;NOV 29 2012;2012;We report on a theoretical model for the calculation of x-ray scattering;from high-pressure electrides. By treating interstitial electrons as;effective anions forming a sublattice within the crystal, we explicitly;account for Bragg reflections from the sublattice as well as for;scattering interferences between the ion lattice and the anion;sublattice. The additional reflections and interferences lead to;significant modifications of the static structure factor as compared to;the pure lattices. Our results are important for accurate calculations;of material properties in the high-pressure phase and allow for direct;experimental verification of electride phases in matter at ultrahigh;pressures through angle-resolved x-ray scattering.;2;0;0;0;2;1098-0121;WOS:000311693600001;;;J;Guclu, Caner;Campione, Salvatore;Capolino, Filippo;Hyperbolic metamaterial as super absorber for scattered fields generated;at its surface;PHYSICAL REVIEW B;86;20;205130;10.1103/PhysRevB.86.205130;NOV 29 2012;2012;We show that hyperbolic metamaterials (HMs) that exhibit hyperbolic;wave-vector dispersion diagrams possess two important features related;to super absorption: The total power scattered by a nanosphere is (i);greatly enhanced when placed at the HM surface, compared to other;material surfaces, and (ii) almost totally directed into the HM. We show;that these two features are peculiar of HM interfaces, and we support;them using a spectral theory study of transverse-electric and magnetic;waves scattered by a subwavelength nanosphere. We analyze the;nanosphere's scattered power absorbed by various substrate;configurations. We also consider various nanosphere materials.;22;0;0;0;22;1098-0121;WOS:000311694300002;;;J;Hebbache, M.;Entanglement of electron spins and geometric phases in the diamond color;center coupled to the P1 center;PHYSICAL REVIEW B;86;19;195316;10.1103/PhysRevB.86.195316;NOV 29 2012;2012;Impurity spins in semiconductors are potential quantum bits.;Entanglement and topological phases are key resources in quantum;computation. We prove that the coupled electron spins carried by a;diamond nitrogen-vacancy color center (NV-) and a single substitutional;nitrogen impurity (P1 center) are entangled in the immediate vicinity of;the level anticrossing that appears in the Zeeman energy diagram at;about 500 G. We also determine the Aharonov-Anandan, Berry, and marginal;geometric phases that can be accumulated by the state vectors of this;spin system when it is magnetically transported around a closed path. At;the resonance where the gap between two energy levels is minimum, the;geometric phases undergo discontinuities, and the entanglement of the;two electron spins is maximal.;2;0;0;0;2;1098-0121;WOS:000311694200004;;;J;Kerdsongpanya, Sit;Alling, Bjorn;Eklund, Per;Effect of point defects on the electronic density of states of ScN;studied by first-principles calculations and implications for;thermoelectric properties;PHYSICAL REVIEW B;86;19;195140;10.1103/PhysRevB.86.195140;NOV 29 2012;2012;We have investigated the effect of defects and impurities on the;electronic density of states of scandium nitride using first-principles;calculations with the generalized gradient approximation and hybrid;functionals for the exchange correlation energy. Our results show that;Sc and N vacancies can introduce asymmetric peaks in the density of;states close to the Fermi level. We also find that the N vacancy states;are sensitive to total electron concentration of the system due to their;possibility for spin polarization. Substitutional point defects shift;the Fermi level in the electronic band according to their valence but do;not introduce sharp features. The energetics and electronic structure of;defect pairs are also studied. By using hybrid functional calculations,;a correct description of the band gap of scandium nitride is obtained.;Our results envisage ways for improving the thermoelectric figure of;merit of ScN by electronic structure engineering through stoichiometry;tuning and doping.;Eklund, Per/B-7677-2011; Alling, Bjorn/I-3193-2012;Eklund, Per/0000-0003-1785-0864; Alling, Bjorn/0000-0001-5863-5605;8;0;0;0;8;1098-0121;WOS:000311694200001;;;J;Kim, Jiseok;Fischetti, Massimo V.;Aboud, Shela;Structural, electronic, and transport properties of silicane nanoribbons;PHYSICAL REVIEW B;86;20;205323;10.1103/PhysRevB.86.205323;NOV 29 2012;2012;Silicane ribbons do not suffer from aromatic dependence of the band gap;making them a more promising candidate for near-term nanoelectronic;application compared to armchair graphene nanoribbons. The structural,;electronic, and transport properties of free-standing sp(3)-hybridized;armchair- and zigzag-edge silicane nanoribbons have been investigated;using ab initio and nonlocal empirical pseudopotential calculations.;Under ambient conditions, two-dimensional silicane sheets will;spontaneously break into stable one-dimensional ribbons similar to;density functional theory studies of graphene ribbons. The calculated;low-field electron mobility and ballistic conductance show a strong edge;dependence, due to differences in the effective mass and momentum;relaxation rates along the two transport directions. The mobility in;zigzag-edge ribbons is found to be approximately twenty times higher;than in armchair-edge ribbons.;7;0;0;0;7;1098-0121;WOS:000311694300004;;;J;Kim, Kyou-Hyun;Payne, David A.;Zuo, Jian-Min;Symmetry of piezoelectric (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (x=0.31);single crystal at different length scales in the morphotropic phase;boundary region;PHYSICAL REVIEW B;86;18;184113;10.1103/PhysRevB.86.184113;NOV 29 2012;2012;We use probes of three different length scales to examine symmetry of (1;- x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) single crystals in the;morphotropic phase boundary (MPB) region at composition x = 0.31;(PMN-31% PT). On the macroscopic scale, x-ray diffraction (XRD) shows a;mixture of strong and weak diffraction peaks of different widths. The;closest match to XRD peak data is made with monoclinic Pm (M-C);symmetry. On the local scale of a few nanometers, convergent beam;electron diffraction (CBED) studies, with a 1.6-nm electron probe,;reveal no obvious symmetry. These CBED experimental patterns can be;approximately matched with simulations based on monoclinic symmetry,;which suggests locally distorted monoclinic structure. A monoclinic Cm;(M-A or M-B)-like symmetry could also be obtained from certain regions;of the crystal by using a larger electron probe size of several tens of;nanometers in diameter. Thus the monoclinic symmetry of single crystal;PMN-31% PT is developed only in parts of the crystal by averaging over;locally distorted structure on the scale of few tens of nanometers. The;macroscopic symmetry observed by XRD is a result of averaging from the;local structure in PMN-31% PT single crystal. The lack of local symmetry;at a few nanometers scale suggests that the polarization switching;results from a change in local displacements, which are not restricted;to specific symmetry planes or directions.;2;0;0;0;2;1098-0121;WOS:000311693900002;;;J;Kossacki, P.;Faugeras, C.;Kuehne, M.;Orlita, M.;Mahmood, A.;Dujardin, E.;Nair, R. R.;Geim, A. K.;Potemski, M.;Circular dichroism of magnetophonon resonance in doped graphene;PHYSICAL REVIEW B;86;20;205431;10.1103/PhysRevB.86.205431;NOV 29 2012;2012;The polarization-resolved Raman-scattering response due to E-2g phonons;in monolayer graphene has been investigated in magnetic fields up to 29;T. The hybridization of the E-2g phonon is only observed with the;fundamental inter-Landau-level excitation (involving the n = 0 Landau;level) and in just one of the two configurations of the circularly;cross-polarized excitation and scattered light. This polarization;anisotropy of the magnetophonon resonance is shown to be inherent to;relatively strongly doped graphene samples with carrier concentrations;typical for graphene deposited on Si/SiO2 substrates.;Dujardin, Erik/A-2748-2010; Raveendran Nair, Rahul/G-5839-2010; Orlita, Milan/H-1130-2014;Dujardin, Erik/0000-0001-7242-9250;;3;0;0;0;3;1098-0121;WOS:000311694300005;;;J;Kostylev, M.;Stashkevich, A. A.;Roussigne, Y.;Grigoryeva, N. A.;Mistonov, A. A.;Menzel, D.;Sapoletova, N. A.;Napolskii, K. S.;Eliseev, A. A.;Lukashin, A. V.;Grigoriev, S. V.;Samarin, S. N.;Microwave properties of Ni-based ferromagnetic inverse opals;PHYSICAL REVIEW B;86;18;184431;10.1103/PhysRevB.86.184431;NOV 29 2012;2012;Investigations of microwave properties of Ni-based inverse ferromagnetic;opal-like film with the [111] axis of the fcc structure along the normal;direction to the film have been carried out in the 2-18 GHz frequency;band. We observed multiple spin wave resonances for the magnetic field;applied perpendicular to the film, i.e., along the [111] axis of this;artificial crystal. For the field applied in the film plane, a broad;band of microwave absorption is observed, which does not contain a fine;structure. The field ranges of the responses observed are quite;different for these two magnetization directions. This suggests a;collective magnetic ground state or shape anisotropy and collective;microwave dynamics for this foam-like material. This result is in;agreement with SQUID measurements of hysteresis loops for the material.;Two different models for this collective behavior are suggested that;satisfactorily explain the major experimental results.;Lukashin, Alexey/F-6746-2013; Mistonov, Alexander/H-2098-2013; Grigoryeva, Natalia/K-2253-2013; Kostylev, Mikhail/H-5214-2014;Mistonov, Alexander/0000-0003-0138-3579; Grigoryeva,;Natalia/0000-0002-9910-6192;;1;0;0;0;1;1098-0121;WOS:000311693900004;;;J;Kvashnin, Y. O.;Khmelevskyi, S.;Kudrnovsky, J.;Yaresko, A. N.;Genovese, L.;Bruno, P.;Noncollinear magnetic ordering in compressed FePd3 ordered alloy: A;first principles study;PHYSICAL REVIEW B;86;17;174429;10.1103/PhysRevB.86.174429;NOV 29 2012;2012;By means of ab initio calculations based on the density functional;theory we investigated the magnetic phase diagram of ordered FePd3 alloy;as a function of external pressure. Considering several magnetic;configurations we concluded that the system under pressure has a;tendency toward noncollinear spin alignment. Analysis of the Heisenberg;exchange parameters J(ij) revealed strong dependence of iron-iron;magnetic couplings on polarization of Pd atoms. To take into account;that effect we built an extended Heisenberg model with higher order;(biquadratic) terms. Minimizing the energy of this Hamiltonian, fully;parametrized using the results of ab initio calculations, we found a;candidate for a ground state of compressed FePd3, which can be seen as;two interpenetrating "triple-Q" phases.;Genovese, Luigi/C-5937-2011; Bruno, Patrick/C-9159-2009; KUDRNOVSKY, Josef/G-5581-2014;Genovese, Luigi/0000-0003-1747-0247; Bruno, Patrick/0000-0002-2574-1943;;KUDRNOVSKY, Josef/0000-0002-9968-6748;1;0;0;0;1;1098-0121;WOS:000311693600004;;;J;Li, Wu;Lindsay, L.;Broido, D. A.;Stewart, Derek A.;Mingo, Natalio;Thermal conductivity of bulk and nanowire Mg2SixSn1-x alloys from first;principles;PHYSICAL REVIEW B;86;17;174307;10.1103/PhysRevB.86.174307;NOV 29 2012;2012;The lattice thermal conductivity (kappa) of the thermoelectric;materials, Mg2Si, Mg2Sn, and their alloys, are calculated for bulk and;nanowires, without adjustable parameters. We find good agreement with;bulk experimental results. For large nanowire diameters, size effects;are stronger for the alloy than for the pure compounds. For example, in;200 nm diameter nanowires kappa is lower than its bulk value by 30%,;20%, and 20% for Mg2Si0.6Sn0.4, Mg2Si, and Mg2Sn, respectively. For;nanowires less than 20 nm thick, the relative decrease surpasses 50%,;and it becomes larger in the pure compounds than in the alloy. At room;temperature, kappa of Mg2SixSn1-x is less sensitive to nanostructuring;size effects than SixGe1-x, but more sensitive than PbTexSe1-x. This;suggests that further improvement of Mg2SixSn1-x as a nontoxic;thermoelectric may be possible.;Lindsay, Lucas/C-9221-2012; Stewart, Derek/B-6115-2008;25;1;0;0;25;1098-0121;WOS:000311693600002;;;J;Niklasson, Anders M. N.;Cawkwell, Marc J.;Fast method for quantum mechanical molecular dynamics;PHYSICAL REVIEW B;86;17;174308;10.1103/PhysRevB.86.174308;NOV 29 2012;2012;As the processing power available for scientific computing grows,;first-principles Born-Oppenheimer molecular dynamics simulations are;becoming increasingly popular for the study of a wide range of problems;in materials science, chemistry, and biology. Nevertheless, the;computational cost of Born-Oppenheimer molecular dynamics still remains;prohibitively large for many potential applications. Here we show how to;avoid a major computational bottleneck: the self-consistent-field;optimization prior to force calculations. The optimization-free quantum;mechanical molecular dynamics method gives trajectories that are almost;indistinguishable from an "exact" microcanonical Born-Oppenheimer;molecular dynamics simulation even when low-prefactor linear scaling;sparse matrix algebra is used. Our findings show that the computational;gap between classical and quantum mechanical molecular dynamics;simulations can be significantly reduced.;4;0;0;0;4;1098-0121;WOS:000311693600003;;;J;Ong, Zhun-Yong;Fischetti, Massimo V.;Theory of interfacial plasmon-phonon scattering in supported graphene;(vol 86, 165422, 2012);PHYSICAL REVIEW B;86;19;199904;10.1103/PhysRevB.86.199904;NOV 29 2012;2012;Ong, Zhun-Yong/B-9486-2013;Ong, Zhun-Yong/0000-0003-2668-6453;6;0;0;0;6;1098-0121;WOS:000311694200007;;;J;Per, Manolo C.;Snook, Ian K.;Russo, Salvy P.;Efficient calculation of unbiased expectation values in diffusion;quantum Monte Carlo;PHYSICAL REVIEW B;86;20;201107;10.1103/PhysRevB.86.201107;NOV 29 2012;2012;Despite the proven utility of quantum Monte Carlo methods in addressing;the quantum many-body problem, many important observables are difficult;to calculate due to the presence of large, and sometimes divergent,;statistical errors. The present state of the art allows the construction;of renormalized estimators which result in finite variances, but which;invariably include some systematic bias. We present a simple method for;calculating unbiased expectation values of local operators in the;diffusion quantum Monte Carlo method which is applicable to both bare;and renormalized estimators, allowing the accurate calculation of;important properties such as forces.;snook, ian/A-3427-2009; Per, Manolo/C-3680-2011;1;0;0;0;1;1098-0121;WOS:000311694300001;;;J;Simonson, J. W.;Smith, G. J.;Post, K.;Pezzoli, M.;Kistner-Morris, J. J.;McNally, D. E.;Hassinger, J. E.;Nelson, C. S.;Kotliar, G.;Basov, D. N.;Aronson, M. C.;
10:177:19 New Quaternary Hydride CeZnSnH1.5: Structure, Magnetism, and Chemical Bonding
DOI:10.1021/cm1016504 JN:CHEMISTRY OF MATERIALS PY:2011
TC:8 AU: Hermes, Wilfried;Chevalier, Bernard;Rodewald, Ute Ch.;Matar, Samir F.;Weill, Francois;Schellenberg, Inga;Poettgen, Rainer;Lueken, Heiko;Speldrich, Manfred;
10:178:1 Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films
DOI:10.1063/1.4733969 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:31 AU: Jia, Junjun;Takasaki, Aiko;Oka, Nobuto;Shigesato, Yuzo;
10:178:2 Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient
DOI:10.1063/1.4879995 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Wang, Yaqin;Zhu, Junhao;Tang, Wu;
10:178:3 Electron concentration dependence of optical band gap shift in Ga-doped ZnO thin films by magnetron sputtering
DOI:10.1016/j.tsf.2014.06.046 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Wang, Yaqin;Tang, Wu;Zhang, Lan;Zhao, Junliang;
10:178:4 Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters
DOI:10.1063/1.4729571 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:14 AU: Kim, J. S.;Jeong, J. -H.;Park, J. K.;Baik, Y. J.;Kim, I. H.;Seong, T. -Y.;Kim, W. M.;
10:178:5 Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA
DOI:10.1063/1.3627233 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Han, T.;Meng, F. Y.;Zhang, S.;Cheng, X. M.;Oh, J. I.;
10:178:6 The change of electrical transport characterizations in Ga doped ZnO films with various thicknesses
DOI:10.1063/1.4789985 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Li, Ying;Huang, Qin;Bi, Xiaofang;
10:178:7 Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films
DOI:10.1016/j.tsf.2011.06.094 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Shinde, S. D.;Deshmukh, A. V.;Date, S. K.;Sathe, V. G.;Adhi, K. P.;
10:178:8 Temperature-dependent electrical property and optical transparency of Al/Ga-doped ZnO double-layer system
DOI:10.1007/s00339-013-7793-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Li, Ying;Bi, Xiaofang;
10:178:9 Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
DOI:10.1063/1.4769801 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Kvit, A. V.;Yankovich, A. B.;Avrutin, V.;Liu, H.;Izyumskaya, N.;Oezguer, Ue;Morkoc, H.;Voyles, P. M.;
10:178:10 Scanning tunneling microscope investigation of local density of states in Al-doped ZnO thin films
DOI:10.1103/PhysRevB.83.075430 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Likovich, Edward M.;Jaramillo, Rafael;Russell, Kasey J.;Ramanathan, Shriram;Narayanamurti, Venkatesh;
10:178:11 Al-doped ZnO nanocrystals: Electronic states through scanning tunneling spectroscopy
DOI:10.1063/1.3662104 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Ghosh, Batu;Pal, Amlan J.;
10:178:12 Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.02.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Chen, Cheng-Yu;Hsiao, Li-Han;Chyi, Jen-Inn;
10:178:13 Effect of substrate temperature on the properties of Al-doped ZnO films sputtered from aerogel nanopowders for solar cells applications
DOI:10.1016/j.tsf.2010.12.120 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Ben Ayadi, Z.;El Mir, L.;Djessas, K.;Alaya, S.;
10:178:14 The materials characteristic and the efficiency degradation of solar cells from solar grade silicon from a metallurgical process route
DOI:10.1007/s10853-010-4870-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:11 AU: Yang, Hong;Wang, He;
10:178:15 Transport Gap of Nanoparticle-Passivated Silicon Substrates
DOI:10.1002/smll.200901327 JN:SMALL PY:2010
TC:3 AU: Ghosh, Batu;Das, Bikas C.;Pal, Amlan J.;
10:178:16 Conductive and transparent V-doped ZnO thin films grown by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2014.01.027 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Okuda, Shuhei;Matsuo, Takuya;Chiba, Hiroshi;Mori, Tatsuya;Washio, Katsuyoshi;
10:179:1 A simple microwave-assisted combustion synthesis and structural, optical and magnetic characterization of ZnO nanoplatelets
DOI:10.1016/j.ceramint.2013.09.008 JN:CERAMICS INTERNATIONAL PY:2014
TC:14 AU: Koseoglu, Yuksel;
10:179:2 Effects of Ni concentration on structural, magnetic and optical properties of Ni-doped ZnO nanoparticles
DOI:10.1016/j.jallcom.2014.03.079 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Liu, Yang;Liu, Hongbo;Chen, Zhenguo;Kadasala, Naveen;Mao, Chenyi;Wang, Yaxin;Zhang, Yongjun;Liu, Huilian;Liu, Yanqing;Yang, Jinghai;Yan, Yongsheng;
10:179:3 Structural, optical and magnetic properties of nanoparticles of ZnO:Ni-DMS prepared by sol-gel method
DOI:10.1016/j.matchemphys.2010.04.039 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:31 AU: Elilarassi, R.;Chandrasekaran, G.;
10:179:4 Influence of defects on magnetism of Co-doped ZnO
DOI:10.1016/j.jmmm.2011.09.015 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:11 AU: Guo, Shuxia;Du, Zuliang;
10:179:5 Stabilization of ferromagnetism in (Cr, V) co-doped ZnO diluted magnetic semiconductors
DOI:10.1016/j.jmmm.2013.03.025 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:5 AU: Mamouni, N.;El Kenz, A.;Ez-Zahraouy, H.;Loulidi, M.;Benyoussef, A.;Bououdina, M.;
10:179:6 Optical and magnetic properties of Ni doped ZnO planetary ball milled nanopowder synthesized by co-precipitation
DOI:10.1016/j.ceramint.2014.07.148 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Shinde, K. P.;Pawar, R. C.;Sinha, B. B.;Kim, H. S.;Oh, S. S.;Chung, K. C.;
10:179:7 Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism
DOI:10.1016/j.jmmm.2011.08.050 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:14 AU: Peng, Yingzi;Huo, Dexuan;He, Haiping;Li, Yuan;Li, Lingwei;Wang, Huawen;Qian, Zhenghong;
10:179:8 Influence of pH on the structural optical and magnetic properties of Zn1-xMnxO thin films grown by sol-gel method
DOI:10.1016/j.jallcom.2012.11.097 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Goktas, A.;Mutlu, I. H.;Yamada, Y.;Celik, E.;
10:179:9 Effect of preparation technique on the selected characteristics of Zn1-xCoxO nanocrystalline thin films deposited by sol-gel and magnetron sputtering
DOI:10.1016/j.jallcom.2014.06.160 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Goktas, A.;Aslan, F.;Mutlu, I. H.;
10:179:10 GGA plus U investigations of impurity d-electrons effects on the electronic and magnetic properties of ZnO
DOI:10.1016/j.jmmm.2014.03.033 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:0 AU: Ul Haq, Bakhtiar;Ahmed, R.;Shaari, A.;Goumri-Said, Souraya;
10:179:11 Influence of vanadium concentration on the microstructure and magnetic properties of V-doped ZnO thin films
DOI:10.1016/j.tsf.2010.04.034 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Naydenova, Ts.;Atanasov, P.;Koleva, M.;Nedialkov, N.;Perriere, J.;Defourneau, D.;Fukuoka, H.;Obara, M.;Baumgart, Ch.;Zhou, Sh.;Schmidt, H.;
10:179:12 Microfabrication of dilute magnetic semiconducting Ti1-xCoxO2 films using photosensitive sol-gel method
DOI:10.1016/j.tsf.2010.10.043 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Chen, Y.;Zhao, G.;Ren, Y.;Wang, Z.;
10:179:13 Improvements of the ferroelectric properties of high-valence Tb-doped Bi4Ti3O12 thin film grown by sol-gel method
DOI:10.1016/j.matlet.2009.11.017 JN:MATERIALS LETTERS PY:2010
TC:9 AU: Pei, Ling;Li, Meiya;Liu, Jun;Yu, Benfang;Wang, Jing;Zhao, Xingzhong;
10:179:14 Controllable synthesis and magnetic investigation of ZnO: Co nanowires and nanotubes
DOI:10.1016/j.matlet.2012.07.099 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Li, Jianjun;Zhang, Liting;Zhu, Jinbo;Liu, Yin;Hao, Weichang;Li, Benxia;
10:179:15 Microstructural, optical and magnetic properties of cobalt-doped zinc oxysulfide thin films
DOI:10.1016/j.matchemphys.2011.07.069 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:3 AU: Polat, I.;Aksu, S.;Altunbas, M.;Bacaksiz, E.;
10:179:16 Magnetism in Cr doped ZnO: Density-functional theory studies
DOI:10.1016/j.jmmm.2010.11.027 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:4 AU: Jia, Xingtao;Qin, Minghui;Yang, Wei;
10:179:17 Synthesis and characterization of Bi4Ti3O12, (Bi3.25La0.75)Ti3O12, and Bi4Ti3O12/(Bi3.25La0.75)Ti3O12 multilayered films prepared using novel photochemical sol-gel method
DOI:10.1016/j.matlet.2011.09.029 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Chen, Yuanqing;Zhao, Gaoyang;Liang, Hongwei;Xia, Weiming;
10:179:18 Ferromagnetic ZnO nanoparticles prepared by pulsed laser deposition in liquid
DOI:10.1016/j.matlet.2012.06.088 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Zhao, Chenlin;Huang, Yi;Abiade, Jeremiah T.;
10:180:1 The role of substrate temperature on the properties of nanocrystalline Mo doped ZnO thin films by spray pyrolysis
DOI:10.1016/j.ceramint.2012.01.039 JN:CERAMICS INTERNATIONAL PY:2012
TC:21 AU: Swapna, R.;Kumar, M. C. Santhosh;
10:180:2 Deposition of the low resistive Ag-N dual acceptor doped p-type ZnO thin films
DOI:10.1016/j.ceramint.2012.08.027 JN:CERAMICS INTERNATIONAL PY:2013
TC:10 AU: Swapna, R.;Kumar, M. C. Santhosh;
10:180:3 Rapid synthesis and thermal catalytic performance of N-doped ZnO/Ag nanocomposites
DOI:10.1016/j.ceramint.2013.07.033 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Lu, Juan;Zhu, Jia;Wang, Zuoshan;Cao, Jialei;Zhou, Xiufeng;
10:180:4 Fabrication and characterization of n-ZnO:Eu/p-ZnO:(Ag, N) homojunction by spray pyrolysis
DOI:10.1016/j.materresbull.2013.08.045 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Swapna, R.;Kumar, M. C. Santhosh;
10:180:5 Deposition of Na-N dual acceptor doped p-type ZnO thin films and fabrication of p-ZnO:(Na, N)/n-ZnO:Eu homojunction
DOI:10.1016/j.mseb.2013.06.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:4 AU: Swapna, R.;Kumar, M. C. Santhosh;
10:180:6 Realization of stable p-type ZnO thin films using Li-N dual acceptors
DOI:10.1016/j.jallcom.2011.05.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Rao, T. Prasada;Kumar, M. C. Santhosh;
10:180:7 Effect of K-N on the structural and optical properties of K-N co-doped ZnO film
DOI:10.1016/j.mssp.2011.04.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Zhao, Yue;Zhou, Mingtao;Lv, Zhiyong;Li, Zhao;Huang, Jian;Liang, Xiaoyan;Min, Jiahua;
10:180:8 Ag-N doped ZnO film and its p-n junction fabricated by ion beam assisted deposition
DOI:10.1016/j.apsusc.2009.10.054 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Yan, Zhi;Ma, Youpeng;Deng, Peiran;Yu, Zhishui;Liu, Cheng;Song, Zhitang;
10:180:9 p-Type conductivity and stability of Ag-N codoped ZnO thin films
DOI:10.1016/j.jallcom.2014.04.051 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:11 AU: Li, Wanjun;Kong, Chunyang;Qin, Guoping;Ruan, Haibo;Fang, Liang;
10:180:10 Efficient ultraviolet emission of ZnS nanospheres: Co doping enhancement
DOI:10.1016/j.matlet.2013.03.036 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Tang, Li-Juan;Huang, Gui-Fang;Tian, Yong;Huang, Wei-Qing;Xia, Ming-Gang;Jiao, Chao;Long, Jin-Ping;Zhan, Si-Qi;
10:180:11 Structural and electrical properties of Li-doped p-type ZnO thin films fabricated by RF magnetron sputtering
DOI:10.1016/j.mseb.2010.12.018 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:7 AU: Tang, Lidan;Wang, Bing;Zhang, Yue;Gu, Yousong;
10:180:12 Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen
DOI:10.1016/j.tsf.2009.12.007 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Wang, X. H.;Yao, B.;Cong, C. X.;Wei, Z. P.;Shen, D. Z.;Zhang, Z. Z.;Li, B. H.;Lu, Y. M.;Zhao, D. X.;Zhang, J. Y.;Fan, X. W.;
10:180:13 Morphology controlled synthesis of ZnO particles through the oxidation of Al-Zn mixture
DOI:10.1016/j.ceramint.2010.03.024 JN:CERAMICS INTERNATIONAL PY:2010
TC:5 AU: Lee, Geun-Hyoung;
10:180:14 Optical and electronic properties of highly stable and textured hydrogenated ZnO:Al thin films
DOI:10.1016/j.materresbull.2012.05.013 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:2 AU: Hwang, Younghun;Kim, Hyungmin;Um, Youngho;Park, Hyoyeol;
10:181:1 Synthesis of K-doped p-type ZnO nanorods along (100) for ferroelectric and dielectric applications
DOI:10.1016/j.matlet.2010.05.044 JN:MATERIALS LETTERS PY:2010
TC:28 AU: Gupta, Manoj K.;Sinha, Nidhi;Singh, B. K.;Kumar, Binay;
10:181:2 Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods
DOI:10.1016/j.materresbull.2014.07.032 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Sinha, Nidhi;Ray, Geeta;Godara, Sanjay;Gupta, Manoj K.;Kumar, Binay;
10:181:3 p-type K-doped ZnO nanorods for optoelectronic applications
DOI:10.1063/1.3574656 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Gupta, Manoj K.;Sinha, Nidhi;Kumar, Binay;
10:181:4 Synthesis and enhanced properties of cerium doped ZnO nanorods
DOI:10.1016/j.ceramint.2014.04.079 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Sinha, Nidhi;Ray, Geeta;Bhandari, Sonia;Godara, Sanjay;Kumar, Binay;
10:181:5 High T-c ferroelectricity in Ba-doped ZnO nanoparticles
DOI:10.1016/j.matlet.2014.04.054 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Srinet, Gunjan;Kumar, Ravindra;Sajal, Vivek;
10:181:6 Effects of Ni doping on structural, optical and dielectric properties of ZnO
DOI:10.1016/j.ceramint.2013.03.008 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Srinet, Gunjan;Kumar, Ravindra;Sajal, Vivek;
10:181:7 Ferromagnetism and ferroelectric properties of (Mn, Li) co-doped ZnO nanorods arrays deposited by electrodeposition
DOI:10.1016/j.jcrysgro.2011.06.039 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Zou, C. W.;Shao, L. X.;Guo, L. P.;Fu, D. J.;Kang, T. W.;
10:181:8 High T-c ferroelectricity in V-doped ZnO nanorods
DOI:10.1039/c1jm12107c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Gupta, Manoj Kumar;Kumar, Binay;
10:181:9 Effect of processing on dielectric properties of (0.95)PbZr0.52Ti0.48O3-(0.05)BiFeO3
DOI:10.1007/s00339-012-7458-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:7 AU: Sharma, Subhash;Singh, Vikash;Parkash, Om;Dwivedi, R. K.;
10:181:10 Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO
DOI:10.1063/1.3456381 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Liu, S. H.;Hsu, H. S.;Venkataiah, G.;Qi, X.;Lin, C. R.;Lee, J. F.;Liang, K. S.;Huang, J. C. A.;
10:181:11 Enhanced ferroelectric, dielectric and optical behavior in Li-doped ZnO nanorods
DOI:10.1016/j.jallcom.2011.03.119 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:18 AU: Gupta, Manoj K.;Kumar, Binay;
10:181:12 Dielectric studies and band gap tuning of ferroelectric Cr-doped ZnO nanorods
DOI:10.1063/1.4730933 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Gupta, Manoj K.;Sinha, Nidhi;Kumar, Binay;
10:181:13 Ferromagnetic ZnO nanocrystals and Al-induced defects
DOI:10.1063/1.3665637 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Phadnis, Chinmay;Inamdar, Darshana Y.;Dubenko, Igor;Pathak, Arjun;Ali, Naushad;Mahamuni, Shailaja;
10:181:14 Microwave hydrothermal synthesis of K+ doped ZnO nanoparticles with enhanced photocatalytic properties under visible-light
DOI:10.1016/j.matlet.2013.12.052 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Li, Dan;Huang, Jian-Feng;Cao, Li-Yun;OuYang, Hai-Bo;Li, Jia-Yin;Yao, Chun-Yon;
10:181:15 Electrodeposition of ZnO nanorod arrays on ZnO substrate with tunable orientation and optical properties
DOI:10.1088/0957-4484/21/39/395603 JN:NANOTECHNOLOGY PY:2010
TC:15 AU: Jehl, Z.;Rousset, J.;Donsanti, F.;Renou, G.;Naghavi, N.;Lincot, D.;
10:181:16 Co-existence of tetragonal and monoclinic phases and multiferroic properties for x <= 0.30 in the (1-x)Pb(Zr0.52Ti0.48)O-3-(x)BiFeO3 system
DOI:10.1016/j.jallcom.2014.06.061 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Sharma, Subhash;Singh, Vikash;Kotnala, R. K.;Ranjan, Rajeev;Dwivedi, R. K.;
10:181:17 The stress-dependent piezoelectric coefficient of ZnO wire measured by piezoresponse force microscopy
DOI:10.1016/j.scriptamat.2011.10.013 JN:SCRIPTA MATERIALIA PY:2012
TC:4 AU: Lee, Hyunsoo;Park, Joonkyu;Han, Sang A.;Lee, Donghyeok;Kim, K. B.;Lee, N. S.;Park, Jun-Young;Seo, Yongho;Lee, SangWook;Choi, Young Jin;
10:181:18 V-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering
DOI:10.1080/00150193.2010.484319 JN:FERROELECTRICS PY:2010
TC:2 AU: Shao, W. D.;Chen, X. F.;Ren, W.;Shi, P.;Wu, X. Q.;Tan, O. K.;Zhu, W. G.;Yao, X.;
10:182:1 Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation
DOI:10.1021/nn9014246 JN:ACS NANO PY:2010
TC:31 AU: Hong, Woong-Ki;Jo, Gunho;Sohn, Jung Inn;Park, Woojin;Choe, Minhyeok;Wang, Gunuk;Kahng, Yung Ho;Welland, Mark E.;Lee, Takhee;
10:182:2 Probing Surface Band Bending of Surface-Engineered Metal Oxide Nanowires
DOI:10.1021/nn205097e JN:ACS NANO PY:2012
TC:50 AU: Chen, Cheng-Ying;Retamal, Jose Ramon Duran;Wu, I-Wen;Lien, Der-Hsien;Chen, Ming-Wei;Ding, Yong;Chueh, Yu-Lun;Wu, Chih-I;He, Jr-Hau;
10:182:3 p-Type Beta-Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties
DOI:10.1002/adfm.201300413 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:5 AU: Feng, Mei;Luo, Lin-Bao;Nie, Biao;Yu, Shu-Hong;
10:182:4 p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires
DOI:10.1002/adma.201101376 JN:ADVANCED MATERIALS PY:2011
TC:36 AU: Lee, JunSeok;Cha, SeungNam;Kim, JongMin;Nam, HyeWon;Lee, SangHyo;Ko, WonBae;Wang, Kang L.;Park, JeaGun;Hong, JinPyo;
10:182:5 Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
DOI:10.1063/1.3611032 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Khanal, D. R.;Levander, A. X.;Yu, K. M.;Liliental-Weber, Z.;Walukiewicz, W.;Grandal, J.;Sanchez-Garcia, M. A.;Calleja, E.;Wu, J.;
10:182:6 Factors that determine and limit the resistivity of high-quality individual ZnO nanowires
DOI:10.1088/0957-4484/24/43/435706 JN:NANOTECHNOLOGY PY:2013
TC:15 AU: Lord, Alex M.;Maffeis, Thierry G.;Walton, Alex S.;Kepaptsoglou, Despoina M.;Ramasse, Quentin M.;Ward, Michael B.;Koeble, Juergen;Wilks, Steve P.;
10:182:7 Zinc Oxide Nanowire Rigid Platforms on Elastomeric Substrates
DOI:10.1021/am200665q JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:8 AU: Bendall, James S.;Graz, Ingrid;Lacour, Stephanie P.;
10:182:8 Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors
DOI:10.1088/0957-4484/23/48/485201 JN:NANOTECHNOLOGY PY:2012
TC:7 AU: Choe, Minhyeok;Park, Woojin;Kang, Jang-Won;Jeong, Sehee;Hong, Woong-Ki;Lee, Byoung Hun;Park, Seong-Ju;Lee, Takhee;
10:182:9 Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping
DOI:10.1021/nn200963k JN:ACS NANO PY:2011
TC:16 AU: Tang, Yong-Bing;Bo, Xiang-Hui;Xu, Jun;Cao, Yu-Lin;Chen, Zhen-Hua;Song, Hai-Sheng;Liu, Chao-Ping;Hung, Tak-Fu;Zhang, Wen-Jun;Cheng, Hui-Ming;Bello, Igor;Lee, Shuit-Tong;Lee, Chun-Sing;
10:183:1 Structural, optical, spectroscopic and electrical properties of Mo-doped ZnO thin films grown by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2014.07.017 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Soumahoro, I.;Colis, S.;Schmerber, G.;Leuvrey, C.;Barre, S.;Ulhaq-Bouillet, C.;Muller, D.;Abd-Lefdil, M.;Hassanain, N.;Petersen, J.;Berrada, A.;Slaoui, A.;Dinia, A.;
10:183:2 Structural, optical, and electrical properties of Yb-doped ZnO thin films prepared by spray pyrolysis method
DOI:10.1063/1.3544307 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:22 AU: Soumahoro, I.;Schmerber, G.;Douayar, A.;Colis, S.;Abd-Lefdil, M.;Hassanain, N.;Berrada, A.;Muller, D.;Slaoui, A.;Rinnert, H.;Dinia, A.;
10:183:3 Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering
DOI:10.1063/1.3436628 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:15 AU: Petersen, Julien;Brimont, Christelle;Gallart, Mathieu;Schmerber, Guy;Gilliot, Pierre;Ulhaq-Bouillet, Corinne;Rehspringer, Jean-Luc;Colis, Silviu;Becker, Claude;Slaoui, Abdelillah;Dinia, Aziz;
10:183:4 Structural and near-infra red luminescence properties of Nd-doped TiO2 films deposited by RF sputtering
DOI:10.1039/c2jm34708c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:16 AU: Pandiyan, Rajesh;Micheli, Victor;Ristic, Davor;Bartali, Ruben;Pepponi, Giancarlo;Barozzi, Mario;Gottardi, Gloria;Ferrari, Maurizio;Laidani, Nadhira;
10:183:5 Efficient energy transfer from ZnO to Nd3+ ions in Nd-doped ZnO films deposited by magnetron reactive sputtering
DOI:10.1039/c4tc00980k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Balestrieri, Matteo;Colis, Silviu;Gallart, Mathieu;Ferblantier, Gerald;Muller, Dominique;Gilliot, Pierre;Bazylewski, Paul;Chang, Gap Soo;Slaoui, Abdelillah;Dinia, Aziz;
10:183:6 Structural and optical properties of Yb-doped ZnO films deposited by magnetron reactive sputtering for photon conversion
DOI:10.1016/j.solmat.2013.06.032 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:15 AU: Balestrieri, M.;Ferblantier, G.;Colis, S.;Schmerber, G.;Ulhaq-Bouillet, C.;Muller, D.;Slaoui, A.;Dinia, A.;
10:183:7 Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering
DOI:10.1016/j.tsf.2010.03.007 JN:THIN SOLID FILMS PY:2010
TC:27 AU: Lin, Y. C.;Wang, B. L.;Yen, W. T.;Ha, C. T.;Peng, Chris;
10:183:8 Effects of Codoping Al3+ on Luminescence of ZnO: Eu and ZnO:Tb Thin-Films
DOI:10.1080/10584587.2013.790200 JN:INTEGRATED FERROELECTRICS PY:2013
TC:1 AU: Wu, Zhenglong;Wang, Yanhui;Zhang, Jianguo;Wang, Yinshu;
10:183:9 Optical properties of rare earth-doped TiO2 anatase and rutile thin films grown by pulsed-laser deposition
DOI:10.1016/j.tsf.2013.11.032 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Le Boulbar, E.;Millon, E.;Boulmer-Leborgne, C.;Cachoncinlle, C.;Hakim, B.;Ntsoenzok, E.;
10:183:10 Gold nanosphere enhanced green and red fluorescence in ZnO: Al, Eu3+
DOI:10.1063/1.4904014 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bishnoi, Swati;Das, Rupali;Chawla, Santa;
10:183:11 Fabrication and photocatalytic activity of electrospun nylon-6 nanofibers containing tourmaline and titanium dioxide nanoparticles
DOI:10.1016/j.ceramint.2013.02.057 JN:CERAMICS INTERNATIONAL PY:2013
TC:4 AU: Kang, Seung-Ji;Tijing, Leonard D.;Hwang, Bo-sang;Jiang, Zhe;Kim, Hak Yong;Kim, Cheol Sang;
10:183:12 Nd:SrTiO3 thin films as photon downshifting layers for photovoltaics
DOI:10.1016/j.solmat.2012.03.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:16 AU: Fix, T.;Rinnert, H.;Blamire, M. G.;Slaoui, A.;MacManus-Driscoll, J. L.;
10:183:13 Annealing effects on the photoluminescence of terbium doped zinc oxide films
DOI:10.1016/j.tsf.2013.11.123 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Ziani, A.;Davesnne, C.;Labbe, C.;Cardin, J.;Marie, P.;Frilay, C.;Boudin, S.;Portier, X.;
10:183:14 Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films
DOI:10.1016/j.tsf.2013.08.014 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Boukhicha, Rym;Charpentier, Coralie;Prod'Homme, Patricia;Roca i Cabarrocas, Pere;Lerat, Jean-Francois;Emeraud, Thierry;Johnson, Erik;
10:183:15 Energy transfer mechanism between terbium and europium ions in zinc oxide and zinc silicates thin films
DOI:10.1016/j.tsf.2013.11.122 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Davesnne, C.;Ziani, A.;Labbe, C.;Marie, P.;Frilay, C.;Portier, X.;
10:183:16 Optical operation by electrooptical features of ZnO nanocrystalline films doped by Tm3+ ions
DOI:10.1016/j.jallcom.2012.10.106 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Douayar, A.;Belayachi, A.;Abd-Lefdil, M.;Nouneh, K.;Laghfour, Z.;Kityk, I. V.;Slezak, A.;Miedzisnki, R.;
10:183:17 Optical transmittance enhancement and bandgap widening of ZnO:Al powders by W codoping
DOI:10.1007/s10853-012-6748-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: He, H. -Y.;He, Z.;Shen, Q.;Lu, J.;
10:183:18 Size-dependent effect of energy transfer on photoluminescence from Si nanocrystals in close proximity with ZnO films
DOI:10.1016/j.tsf.2011.12.026 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Kim, Sung;Shin, Dong Hee;Kim, Chang Oh;Hong, Seung Hui;Choi, Suk-Ho;
10:183:19 Effect of interface bonding on the transport properties in CoFe2/SrTiO3/CoFe2/NiFe magnetic tunnel junctions
DOI:10.1103/PhysRevB.82.024415 JN:PHYSICAL REVIEW B PY:2010
TC:1 AU: Moubah, R.;Colis, S.;Schleicher, F.;Najjari, N.;Majjad, H.;Versini, G.;Barre, S.;Ulhaq-Bouillet, C.;Schmerber, G.;Bowen, M.;Dinia, A.;
10:183:20 On the correlation of crystal defects and band gap properties of ZnO nanobelts
DOI:10.1007/s00339-011-6554-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:3 AU: Asthana, A.;Momeni, K.;Prasad, A.;Yap, Y. K.;Yassar, R. S.;
10:183:21 Acoustically induced optical effects in Pr3+ and Tm3+ doped calcium gadolinium oxyborate nanocomposites
DOI:10.1016/j.jallcom.2010.12.172 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Lukasiewicz, T.;Kisielewski, J.;Lipinska, L.;Majchrowski, A.;Lakshminarayana, G.;Kityk, I. V.;
10:183:22 Improving 1.54 mu m emission by inducting Ti ion in Er3+/Yb3+ codoped phosphate glass ceramic
DOI:10.1016/j.optmat.2013.06.004 JN:OPTICAL MATERIALS PY:2013
TC:0 AU: Ming, Chengguo;Song, Feng;An, Liqun;Ren, Xiaobin;
10:183:23 Luminescence properties of Nd3+-doped (Y,Gd)BO3 phosphors
DOI:10.1016/j.tsf.2010.04.048 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Yi, Soung Soo;Kim, Ji-Chul;Kim, Dong Woo;Balakrishnaiah, R.;Kim, Sung Hoon;Jang, Kiwan;Lee, Ho Sueb;Moon, Byung Kee;Jeong, Jung Hyun;
10:184:1 Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance
DOI:10.1063/1.4805349 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:16 AU: Hatch, S. M.;Briscoe, J.;Sapelkin, A.;Gillin, W. P.;Gilchrist, J. B.;Ryan, M. P.;Heutz, S.;Dunn, S.;
10:184:2 Nanostructured p-n Junctions for Kinetic-to-Electrical Energy Conversion
DOI:10.1002/aenm.201200205 JN:ADVANCED ENERGY MATERIALS PY:2012
TC:21 AU: Briscoe, Joe;Stewart, Mark;Vopson, Melvin;Cain, Markys;Weaver, Paul M.;Dunn, Steve;
10:184:3 Acoustic Enhancement of Polymer/ZnO Nanorod Photovoltaic Device Performance
DOI:10.1002/adma.201303304 JN:ADVANCED MATERIALS PY:2014
TC:23 AU: Shoaee, Safa;Briscoe, Joe;Durrant, James R.;Dunn, Steve;
10:184:4 Enhanced quantum dot deposition on ZnO nanorods for photovoltaics through layer-by-layer processing
DOI:10.1039/c0jm02279a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:32 AU: Briscoe, Joe;Gallardo, Diego E.;Hatch, Sabina;Lesnyak, Vladimir;Gaponik, Nikolai;Dunn, Steve;
10:184:5 Measured efficiency of a ZnO nanostructured diode piezoelectric energy harvesting device
DOI:10.1063/1.4749279 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Briscoe, J.;Bilotti, E.;Dunn, S.;
10:184:6 Dynamic nanomechanics of zinc oxide nanowires
DOI:10.1063/1.4704919 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Wang, Lifen;Tian, Xuezeng;Yang, Shize;Xu, Zhi;Wang, Wenlong;Bai, Xuedong;
10:184:7 Improved performance of p-n junction-based ZnO nanogenerators through CuSCN-passivation of ZnO nanorods
DOI:10.1039/c4ta01714e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:8 AU: Jalali, Nimra;Woolliams, Peter;Stewart, Mark;Weaver, Paul M.;Cain, Markys G.;Dunn, Steve;Briscoe, Joe;
10:184:8 Improved CuSCN-ZnO diode performance with spray deposited CuSCN
DOI:10.1016/j.tsf.2012.12.114 JN:THIN SOLID FILMS PY:2013
TC:9 AU: Hatch, S. M.;Briscoe, J.;Dunn, S.;
10:184:9 Solid-state dye-sensitized solar cells based on ordered ZnO nanowire arrays
DOI:10.1088/0957-4484/23/20/205401 JN:NANOTECHNOLOGY PY:2012
TC:12 AU: Desai, Umang V.;Xu, Chengkun;Wu, Jiamin;Gao, Di;
10:184:10 Investigating the source of deep-level photoluminescence in ZnO nanorods using optically detected x-ray absorption spectroscopy
DOI:10.1063/1.4824810 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Hatch, Sabina M.;Sapelkin, Andrei;Cibin, Giannantonio;Taylor, Richard;Dent, Andrew;Briscoe, Joe;Dunn, Steve;
10:184:11 Small-scale piezoelectric devices: Pyroelectric contributions to the piezoelectric response
DOI:10.1063/1.3380824 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Wooldridge, Jenny;Blackburn, John F.;McCartney, Neil L.;Stewart, Mark;Weaver, Paul;Cain, Markys G.;
10:184:12 Mechanism and Growth of Flexible ZnO Nanostructure Arrays in a Facile Controlled Way
DOI:10.1155/2011/473629 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:5 AU: Sheng, Yangping;Jiang, Yang;Lan, Xinzheng;Wang, Chun;Li, Shanying;Liu, Xinmei;Zhong, Honghai;
10:184:13 Small-scale piezoelectric devices: Pyroelectric contributions to the piezoelectric response (vol 107, 104118, 2010)
DOI:10.1063/1.3572036 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Wooldridge, Jenny;Blackburn, John F.;McCartney, Neil L.;Stewart, Mark;Weaver, Paul;Cain, Markys G.;
10:185:1 Enhanced gas sensing properties by SnO2 nanosphere functionalized TiO2 nanobelts
DOI:10.1039/c2jm15017d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:56 AU: Zeng, Wen;Liu, Tianmo;Wang, Zhongchang;
10:185:2 Synthesis and conductivity of cerium oxide nanoparticles
DOI:10.1016/j.matlet.2010.02.062 JN:MATERIALS LETTERS PY:2010
TC:35 AU: Jin, Hongyun;Wang, Ning;Xu, Liang;Hou, Shuen;
10:185:3 Gas sensing mechanism and properties of Ce-doped SnO2 sensors for volatile organic compounds
DOI:10.1016/j.mssp.2012.02.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:21 AU: Liu, Dejun;Liu, Tianmo;Zhang, Hejing;Lv, Chengling;Zeng, Wen;Zhang, Jianyue;
10:185:4 Hydrothermal synthesis of hierarchical flower-like SnO2 nanostructures with enhanced ethanol gas sensing properties
DOI:10.1016/j.materresbull.2014.05.019 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:7 AU: Zeng, Wen;Zhang, He;Li, Yanqiong;Chen, Weigen;Wang, Zhongchang;
10:185:5 Response time and mechanism of Pd modified TiO2 gas sensor
DOI:10.1016/j.mssp.2013.09.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Zhang, Maolin;Ning, Tao;Zhang, Shuyuan;Li, Zhimin;Yuan, Zhanheng;Cao, Quanxi;
10:185:6 Hydrothermal synthesis of ceria hybrid architectures of nano-rods and nano-octahedrons
DOI:10.1016/j.matlet.2013.01.069 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Chen, Yong;Liu, Tianmo;Chen, Chunlin;Guo, Weiwei;Sun, Rong;Lv, Shuhui;Saito, Mitsuhiro;Tsukimoto, Susumu;Wang, Zhongchang;
10:185:7 Facile synthesis of hybrid hexagonal CeF3 nano-disks on CeO2 frustum pyramids
DOI:10.1016/j.matlet.2012.10.068 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Chen, Yong;Liu, Tianmo;Chen, Chunlin;Sun, Rong;Lv, Shuhui;Saito, Mitsuhiro;Tsukimoto, Susumu;Wang, Zhongchang;
10:185:8 Oxygen Adsorption on Anatase TiO2 (101) and (001) Surfaces from First Principles
DOI:10.2320/matertrans.M2009317 JN:MATERIALS TRANSACTIONS PY:2010
TC:27 AU: Zeng, Wen;Liu, Tianmo;Wang, Zhongchang;Tsukimoto, Susumu;Saito, Mitushiro;Ikuhara, Yuichi;
10:185:9 Ethanol gas sensing property and mechanism of ZnSnO3 doped with Ti ions
DOI:10.1016/j.mssp.2012.02.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:1 AU: Zeng, Wen;Liu, Tian-mo;Lin, Li-yang;
10:185:10 Synthesis and characterization of CeO2 nano-rods
DOI:10.1016/j.ceramint.2013.01.096 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Chen, Yong;Liu, Tianmo;Chen, Chunlin;Guo, Weiwei;Sun, Rong;Lv, Shuhui;Saito, Mitsuhiro;Tsukimoto, Susumu;Wang, Zhongchang;
10:185:11 Facile synthesis of ceria nanospheres by Ce(OH)CO3 precursors
DOI:10.1016/j.matlet.2014.01.178 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Chen, Yong;Qiu, Changjun;Chen, Chunlin;Fan, Xiangfang;Xu, Sibo;Guo, Weiwei;Wang, Zhongchang;
10:185:12 Effect of reaction temperature on crystallization of nanocrystalline zirconia synthesized by microwave-hydrothermal process
DOI:10.1016/j.jallcom.2013.01.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Li, Cuiyan;Li, Kezhi;Li, Hejun;Zhang, Yulei;Ouyang, Haibo;Liu, Lei;Sun, Can;
10:185:13 UV Light Activation of TiO2-Doped SnO2 Thick Film for Sensing Ethanol at Room Temperature
DOI:10.2320/matertrans.MC200904 JN:MATERIALS TRANSACTIONS PY:2010
TC:10 AU: Zeng, Wen;Liu, Tianmo;Wang, Zhongchang;
10:185:14 Tree-like SnO2 nanowires and optical properties
DOI:10.1016/j.matchemphys.2010.11.052 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Tao, Tao;Chen, Qi-yuan;Hu, Hui-ping;Chen, Ying;
10:185:15 Microstructure and Gas-Sensing Property of Titania-Added ZnSnO3
DOI:10.2320/matertrans.M2010017 JN:MATERIALS TRANSACTIONS PY:2010
TC:5 AU: Zeng, Wen;Liu, Tianmo;Wang, Zhongchang;
10:185:16 p-n Heterojunction formation in polyaniline-SnO2 organic-inorganic hybrid composite materials leading to enhancement in sensor functionality toward benzene and toluene vapors at room temperature
DOI:10.1016/j.synthmet.2014.03.017 JN:SYNTHETIC METALS PY:2014
TC:7 AU: Murugan, C.;Subramanian, E.;Padiyan, D. Pathinettam;
10:186:1 Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System
DOI:10.1021/cm1004592 JN:CHEMISTRY OF MATERIALS PY:2010
TC:76 AU: Hoel, Cathleen A.;Mason, Thomas O.;Gaillard, Jean-Francois;Poeppelmeier, Kenneth R.;
10:186:2 Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films
DOI:10.1063/1.4896051 JN:APL MATERIALS PY:2014
TC:0 AU: Morales-Masis, M.;Ding, L.;Dauzou, F.;Jeangros, Q.;Hessler-Wyser, A.;Nicolay, S.;Ballif, C.;
10:186:3 Enhanced performance in polymer light emitting diodes using an indium-zinc-tin oxide transparent anode by the controlling of oxygen partial pressure at room temperature
DOI:10.1039/c3tc30789a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Heo, Soo Won;Ko, Yoon Duk;Kim, Young Sung;Moon, Doo Kyung;
10:186:4 Hydrogen-doped In2O3 transparent conducting oxide films prepared by solid-phase crystallization method
DOI:10.1063/1.3284960 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:28 AU: Koida, Takashi;Kondo, Michio;Tsutsumi, Koichi;Sakaguchi, Akio;Suzuki, Michio;Fujiwara, Hiroyuki;
10:186:5 Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films
DOI:10.1063/1.4861378 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Zhu, Q.;Ma, Q.;Buchholz, D. B.;Chang, R. P. H.;Bedzyk, M. J.;Mason, T. O.;
10:186:6 Analysis of Urbach-like absorption tails in thermally treated ZnO:Al thin films
DOI:10.1063/1.4829999 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Schoenau, S.;Ruske, F.;Neubert, S.;Rech, B.;
10:186:7 Characteristics of Thin-Film-Transistors Based on Zn-In-Sn-O Thin Films Prepared by Co-Sputtering System
DOI:10.2320/matertrans.M2011347 JN:MATERIALS TRANSACTIONS PY:2012
TC:1 AU: Chen, K. J.;Hung, F. Y.;Lui, T. S.;Chang, S. J.;Liao, T. Y.;
10:186:8 Structural and Physical Property Studies of Amorphous Zn-In-Sn-O Thin Films
DOI:10.1111/j.1551-2916.2012.05390.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:7 AU: Proffit, Diana E.;Ma, Qing;Buchholz, Donald B.;Chang, Robert P. H.;Bedzyk, Michael J.;Mason, Thomas O.;
10:186:9 Correlation between oxygen stoichiometry, structure, and opto-electrical properties in amorphous In2O3:H films
DOI:10.1063/1.3696978 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Koida, Takashi;Shibata, Hajime;Kondo, Michio;Tsutsumi, Koichi;Sakaguchi, Akio;Suzuki, Michio;Fujiwara, Hiroyuki;
10:186:10 High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers
DOI:10.1016/j.tsf.2011.10.136 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Kuwahara, Kazunari;Itagaki, Naho;Nakahara, Kenta;Yamashita, Daisuke;Uchida, Giichiro;Kamataki, Kunihiro;Koga, Kazunori;Shiratani, Masaharu;
10:186:11 Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films
DOI:10.1016/j.apsusc.2014.03.047 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Denny, Yus Rama;Lee, Kangil;Seo, Soonjoo;Oh, Suhk Kun;Kang, Hee Jae;Yang, Dong Seok;Heo, Sung;Chung, Jae Gwan;Lee, Jae Cheol;
10:186:12 Structural anisotropy in amorphous SnO2 film probed by X-ray absorption spectroscopy
DOI:10.1063/1.4815984 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Zhu, Q.;Ma, Q.;Buchholz, D. B.;Chang, R. P. H.;Bedzyk, M. J.;Mason, T. O.;
10:186:13 Electrical and Optical Properties of Sb-Doped BaSnO3
DOI:10.1021/cm4019309 JN:CHEMISTRY OF MATERIALS PY:2013
TC:9 AU: Mizoguchi, Hiroshi;Chen, Ping;Boolchand, Punit;Ksenofontov, Vadim;Felser, Claudia;Barnes, Paris W.;Woodward, Patrick M.;
10:186:14 Transparent conducting indium zinc tin oxide thin films with low indium content deposited by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2014.02.016 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Putri, Maryane;Koo, Chang Young;Lee, Jung-A;Kim, Jeong-Joo;Lee, Hee Young;
10:187:1 Transparent semiconductor zinc oxide thin films deposited on glass substrates by sol-gel process
DOI:10.1016/j.ceramint.2010.03.005 JN:CERAMICS INTERNATIONAL PY:2010
TC:37 AU: Tsay, Chien-Yie;Fan, Kai-Shiung;Wang, Yu-Wu;Chang, Chi-Jung;Tseng, Yung-Kuan;Lin, Chung-Kwei;
10:187:2 Ce-doped ZnO nanorods based low operation temperature NO2 gas sensors
DOI:10.1016/j.ceramint.2014.03.080 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Chang, Chi-Jung;Lin, Chang-Yi;Chen, Jem-Kun;Hsu, Mu-Hsiang;
10:187:3 Selective growth of ZnO nanorods for gas sensors using ink-jet printing and hydrothermal processes
DOI:10.1016/j.tsf.2010.08.153 JN:THIN SOLID FILMS PY:2010
TC:35 AU: Chang, Chi-Jung;Hung, Shao-Tsu;Lin, Chung-Kwei;Chen, Chin-Yi;Kuo, En-Hong;
10:187:4 Hierarchical ZnO nanorod-array films with enhanced photocatalytic performance
DOI:10.1016/j.tsf.2012.09.083 JN:THIN SOLID FILMS PY:2013
TC:12 AU: Chang, Chi-Jung;Hsu, Mu-Hsiang;Weng, Yu-Ching;Tsay, Chien-Yie;Lin, Chung-Kwei;
10:187:5 S-doped ZnO nanorods on stainless-steel wire mesh as immobilized hierarchical photocatalysts for photocatalytic H-2 production
DOI:10.1016/j.ijhydene.2014.02.110 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:4 AU: Hsu, Mu-Hsiang;Chang, Chi-Jung;
10:187:6 Highly Efficient Decomposition of Organic Dye by Aqueous-Solid Phase Transfer and In Situ Photocatalysis Using Hierarchical Copper Phthalocyanine Hollow Spheres
DOI:10.1021/am200412t JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:23 AU: Zhang, Mingyi;Shao, Changlu;Guo, Zengcai;Zhang, Zhenyi;Mu, Jingbo;Zhang, Peng;Cao, Tieping;Liu, Yichun;
10:187:7 Chemical vapor deposition preparation of nanostructured ZnO particles and their gas-sensing properties
DOI:10.1007/s11051-013-1580-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:6 AU: Zhang, Dangwen;Wu, Xiaofeng;Han, Ning;Chen, Yunfa;
10:187:8 Hydrothermal synthesis and gas-sensing properties of ultrathin hexagonal ZnO nano sheets
DOI:10.1016/j.ceramint.2013.07.150 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Guo, Weiwei;Fu, Min;Zhai, Chongzhi;Wang, Zhongchang;
10:187:9 Synthesis and properties of ZnFe2O4 replica with biological hierarchical structure
DOI:10.1016/j.mseb.2013.06.012 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:5 AU: Liu, Hongyan;Guo, Yiping;Zhang, Yangyang;Wu, Fen;Liu, Yun;Zhang, Di;
10:187:10 Work function effects of ZnO thin film for acetone gas detection
DOI:10.1016/j.ceramint.2011.05.128 JN:CERAMICS INTERNATIONAL PY:2012
TC:6 AU: Yoon, Young Soo;Jee, Seung Hyun;Kakati, Nitul;Maiti, Jatindranath;Kim, Dong-Joo;Lee, Seok Hee;Yoon, Hyon Hee;
10:187:11 Replication of polypyrrole with photonic structures from butterfly wings as biosensor
DOI:10.1016/j.matchemphys.2011.10.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:7 AU: Tang, Jie;Zhu, Shenmin;Chen, Zhixin;Feng, Chuanliang;Shen, Yanjun;Yao, Fan;Zhang, Di;Moon, Won-Jin;Song, Deok-Min;
10:187:12 Synergistic effects of SPR and FRET on the photoluminescence of ZnO nanorod heterostructures
DOI:10.1088/0957-4484/22/42/425708 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Chang, Jee-Young;Kim, Tae Geun;Sung, Yun-Mo;
10:187:13 Gas sensors with porous three-dimensional framework using TiO(2)/polymer double-shell hollow microsphere
DOI:10.1016/j.tsf.2011.09.065 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Chang, Chi-Jung;Lin, Chung-Kwei;Chen, Chien-Chon;Chen, Chin-Yi;Kuo, En-Hong;
10:187:14 Effect of AZO Substrates on Self-Seeded Electrochemical Growth of Vertically Aligned ZnO Nanorod Arrays and Their Optical Properties
DOI:10.1155/2012/457904 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Peic, A.;Dimopoulos, T.;Resel, R.;Abermann, S.;Postl, M.;List, E. J. W.;Brueckl, H.;
10:187:15 Ab initio study on preferred growth of ZnO
DOI:10.1016/j.scriptamat.2010.11.021 JN:SCRIPTA MATERIALIA PY:2011
TC:10 AU: Liu, Po-Liang;Siao, Yu-Jin;
10:187:16 Variation in the structural and optical properties of ZnSe/ZnS core/shell nanocrystals with shell thickness
DOI:10.1007/s11051-012-1036-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:1 AU: Sung, Yun-Mo;You, Minkyou;Kim, Tae Geun;
10:188:1 Evidence of Superparamagnetic Co Clusters in Pulsed Laser Deposition-Grown Zn0.9Co0.1O Thin Films Using Atom Probe Tomography
DOI:10.1021/ja108290u JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:36 AU: Larde, Rodrigue;Talbot, Etienne;Pareige, Philippe;Bieber, Herrade;Schmerber, Guy;Colis, Silviu;Pierron-Bohnes, Veronique;Dinia, Aziz;
10:188:2 Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation
DOI:10.1063/1.4901465 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Devaraj, A.;Kaspar, T. C.;Ramanan, S.;Walvekar, S.;Bowden, M. E.;Shutthanandan, V.;Kurtz, R. J.;
10:188:3 High-k Hf-based layers grown by RF magnetron sputtering
DOI:10.1088/0957-4484/21/9/095704 JN:NANOTECHNOLOGY PY:2010
TC:18 AU: Khomenkova, L.;Dufour, C.;Coulon, P-E;Bonafos, C.;Gourbilleau, F.;
10:188:4 Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-kappa silicates
DOI:10.1063/1.4718440 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Talbot, E.;Roussel, M.;Genevois, C.;Pareige, P.;Khomenkova, L.;Portier, X.;Gourbilleau, F.;
10:188:5 Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering
DOI:10.1088/0957-4484/21/28/285707 JN:NANOTECHNOLOGY PY:2010
TC:17 AU: Khomenkova, L.;Portier, X.;Cardin, J.;Gourbilleau, F.;
10:188:6 Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures
DOI:10.1088/0957-4484/21/5/055606 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Perego, M.;Seguini, G.;Wiemer, C.;Fanciulli, M.;Coulon, P-E;Bonafos, C.;
10:188:7 Influence of the supersaturation on Si diffusion and growth of Si nanoparticles in silicon-rich silica
DOI:10.1063/1.4792218 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Roussel, M.;Talbot, E.;Pareige, P.;Gourbilleau, F.;
10:188:8 Hafnium silicate dielectrics fabricated by RF magnetron sputtering
DOI:10.1016/j.jnoncrysol.2010.12.048 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:6 AU: Khomenkova, L.;Portier, X.;Marie, P.;Gourbilleau, F.;
10:188:9 Three-dimensional chemical imaging of embedded nanoparticles using atom probe tomography
DOI:10.1088/0957-4484/23/21/215704 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Kuchibhatla, Satyanarayana V. N. T.;Shutthanandan, V.;Prosa, T. J.;Adusumilli, P.;Arey, B.;Buxbaum, A.;Wang, Y. C.;Tessner, T.;Ulfig, R.;Wang, C. M.;Thevuthasan, S.;
10:188:10 Temperature-dependent electron transport in highly ordered Co/Al2O3 core-shell nanocrystal memory synthesized with di-block co-polymers
DOI:10.1063/1.3698322 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Zhou, Huimei;Dorman, James A.;Perng, Ya-Chuan;Chang, Jane P.;Liu, Jianlin;
10:188:11 Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering
DOI:10.1016/j.mseb.2011.10.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:5 AU: Talbot, Etienne;Roussel, Manuel;Khomenkova, Larysa;Gourbilleau, Fabrice;Pareige, Philippe;
10:188:12 Confined phase separation in SiOx nanometric thin layers
DOI:10.1063/1.4830375 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Roussel, M.;Talbot, E.;Pareige, C.;Nalini, R. Pratibha;Gourbilleau, F.;Pareige, P.;
10:188:13 Subsurface synthesis and characterization of Ag nanoparticles embedded in MgO
DOI:10.1088/0957-4484/24/9/095707 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Vilayurganapathy, S.;Devaraj, A.;Colby, R.;Pandey, A.;Varga, T.;Shutthanandan, V.;Manandhar, S.;El-Khoury, P. Z.;Kayani, Asghar;Hess, W. P.;Thevuthasan, S.;
10:188:14 Nanoscale characterization of powder materials by atom probe tomography
DOI:10.1016/j.powtec.2010.08.014 JN:POWDER TECHNOLOGY PY:2011
TC:6 AU: Larde, R.;Bran, J.;Jean, M.;Le Breton, J. M.;
10:188:15 Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)(x)(SiO2)(1-x)
DOI:10.1063/1.3448232 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Liu, J.;Wu, X.;Lennard, W. N.;Landheer, D.;Dharma-Wardana, M. W. C.;
10:188:16 Laser assisted crystallization of ferromagnetic amorphous ribbons: A multimodal characterization and thermal model study
DOI:10.1063/1.4864065 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Katakam, Shravana;Devaraj, Arun;Bowden, Mark;Santhanakrishnan, S.;Smith, Casey;Ramanujan, R. V.;Thevuthasan, Suntharampillai;Banerjee, Rajarshi;Dahotre, Narendra B.;
10:188:17 Femtosecond laser writing over silver nanoparticles system embedded in silica using nonlinear microscopy
DOI:10.1016/j.optmat.2013.11.012 JN:OPTICAL MATERIALS PY:2014
TC:3 AU: Licea-Rodriguez, Jacob;Rocha-Mendoza, Israel;Rangel-Rojo, Raul;Rodriguez-Fernandez, Luis;Oliver, Alicia;
10:188:18 De-vitrification of nanoscale phase-separated amorphous thin films in the immiscible copper-niobium system
DOI:10.1080/14786435.2014.892223 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:3 AU: Puthucode, A.;Devaraj, A.;Nag, S.;Bose, S.;Ayyub, P.;Kaufman, M. J.;Banerjee, R.;
10:188:19 Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors
DOI:10.1016/j.tsf.2009.12.006 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Chen, Shih-Ching;Chang, Ting-Chang;Wu, Yung-Chun;Chin, Jing-Yi;Syu, Yong-En;Sze, S. M.;Chang, Chun-Yen;Wu, Hsing-Hua;Chen, Yi-Chan;
10:189:1 Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H-2 ambient at room temperature
DOI:10.1016/j.tsf.2012.07.049 JN:THIN SOLID FILMS PY:2012
TC:11 AU: Zhu, B. L.;Wang, J.;Zhu, S. J.;Wu, J.;Zeng, D. W.;Xie, C. S.;
10:189:2 Influence of substrate temperature on mechanical, optical and electrical properties of ZnO:Al films
DOI:10.1016/j.jallcom.2010.08.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:31 AU: Wen, Ruitao;Wang, Laisen;Wang, Xuan;Yue, Guang-Hui;Chen, Yuanzhi;Peng, Dong-Liang;
10:189:3 Effects of argon pressure and r.f. power on magnetron sputtered aluminum doped ZnO thin films
DOI:10.1016/j.jcrysgro.2014.02.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:4 AU: Duygulu, N. Evcimen;Kodolbas, A. O.;Ekerim, A.;
10:189:4 Dependence of the properties of sputter deposited Al-doped ZnO thin films on base pressure
DOI:10.1016/j.jallcom.2012.01.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:12 AU: Kim, Deok-Kyu;Kim, Hong-Bae;
10:189:5 Influence of r.f power on structural properties of ZnO thin films
DOI:10.1016/j.jcrysgro.2013.07.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Duygulu, N. Evcimen;Kodolbas, A. O.;Ekerim, A.;
10:189:6 Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties
DOI:10.1016/j.tsf.2010.06.063 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Rahmane, S.;Djouadi, M. A.;Aida, M. S.;Barreau, N.;Abdallah, B.;Zoubir, N. Hadj;
10:189:7 Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells
DOI:10.1016/j.solmat.2013.11.031 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:10 AU: Hussain, Shahzada Qamar;Kim, Sunbo;Ahn, Shihyun;Balaji, Nagarajan;Lee, Youngseok;Lee, Jae Hyeong;Yi, Junsin;
10:189:8 Role of double ITO/In2O3 layer for high efficiency amorphous/crystalline silicon heterojunction solar cells
DOI:10.1016/j.materresbull.2014.05.003 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Kim, Sunbo;Jung, Junhee;Lee, Youn-Jung;Ahn, Shihyun;Hussain, Shahzada Qamar;Park, Jinjoo;Song, Bong-Shik;Han, Sangmyeng;Dao, Vinh Ai;Lee, Jaehyeong;Yi, Junsin;
10:189:9 Highly transparent RF magnetron-sputtered indium tin oxide films for a-Si:H/c-Si heterojunction solar cells amorphous/crystalline silicon
DOI:10.1016/j.mssp.2014.02.044 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Hussain, Shahzada Qamar;Oh, Woong-Kyo;Ahn, Shihyun;Anh Huy Tuan Le;Kim, Sunbo;Iftiquar, S. M.;Velumani, Subramaniam;Lee, Youngseok;Yi, Junsin;
10:189:10 Study on the ITO work function and hole injection barrier at the interface of ITO/a-Si: H(p) in amorphous/crystalline silicon heterojunction solar cells
DOI:10.1016/j.materresbull.2012.04.106 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:11 AU: Oh, Woong-Kyo;Hussain, Shahzada Qamar;Lee, Youn-Jung;Lee, Youngseok;Ahn, Shihyun;Yi, Junsin;
10:189:11 Effect of rf power on the properties of rf magnetron sputtered ZnO:Al thin films
DOI:10.1016/j.matchemphys.2012.06.053 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:6 AU: Saad, M.;Kassis, A.;
10:189:12 Improvement of electrical and optical properties of molybdenum doped zinc oxide films by introducing hydrogen
DOI:10.1016/j.apsusc.2012.05.093 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Wang, Yanfeng;Huang, Qian;Wei, Changchun;Zhang, Dekun;Zhao, Ying;Zhang, Xiaodan;
10:189:13 Advanced light trapping materials: Double layer ZnO:B based transparent conductive oxide
DOI:10.1016/j.tsf.2011.04.148 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Zhang, Xiaodan;Huang, Qian;Wang, Yanfeng;Liu, Yang;Chen, Xinliang;Zhao, Ying;
10:190:1 Growth, stability, optical and photoluminescent properties of aqueous colloidal ZnS nanoparticles in relation to surfactant molecular structure
DOI:10.1016/j.jcis.2011.04.079 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:40 AU: Mehta, S. K.;Kumar, Sanjay;Gradzielski, Michael;
10:190:2 Surfactant assisted surface studies of zinc sulfide nanoparticles
DOI:10.1016/j.apsusc.2011.06.046 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Shahi, Ashutosh K.;Pandey, B. K.;Swarnkar, R. K.;Gopal, R.;
10:190:3 Laser assisted solid state reaction for the synthesis of ZnS and CdS nanoparticles from metal xanthate
DOI:10.1016/j.matlet.2013.10.118 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Onwudiwe, Damian C.;Krueger, Tjaart P. J.;Strydom, Christien A.;
10:190:4 Reagents for ZnS Hierarchical and Non-Hierarchical Porous Self-Assembly
DOI:10.1021/am100390u JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:16 AU: Muruganandham, Manickavachagam;Amutha, Ramakrishnan;Sillanpaa, Mika;
10:190:5 Facile fabrication of wurtzite ZnS hollow nanospheres using polystyrene spheres as templates
DOI:10.1016/j.matlet.2010.05.006 JN:MATERIALS LETTERS PY:2010
TC:11 AU: Bi, Chong;Pan, Liqing;Guo, Zhengang;Zhao, Yuelei;Huang, Miaofeng;Ju, Xin;Xiao, John Q.;
10:190:6 Effect of temperature on the optical and structural properties of hexadecylamine capped ZnS nanoparticles using Zinc(II) N-ethyl-N-phenyldithiocarbamate as single source precursor
DOI:10.1016/j.materresbull.2012.09.038 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:8 AU: Onwudiwe, Damian C.;Strydom, Christien;Oluwafemi, Oluwatobi S.;Songca, Sandile P.;
10:190:7 Zn(II), Cd(II) and Hg(II) complexes of N-methyl-N-phenyl dithiocarbamate as single-source precursors for the synthesis of metal sulfide nanoparticles
DOI:10.1016/j.matlet.2011.07.012 JN:MATERIALS LETTERS PY:2011
TC:18 AU: Onwudiwe, Damian C.;Ajibade, Peter A.;
10:190:8 Colloidal-route synthesis of N-butylaniline capped ZnS and CdS nanoparticles
DOI:10.1016/j.matlet.2012.10.061 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Onwudiwe, Damian C.;Strydom, Christien A.;
10:190:9 Observation of negative persistent photoconductivity in ZnS/PVA nanocomposite materials
DOI:10.1016/j.jallcom.2013.11.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Shahi, A. K.;Pandey, B. K.;Singh, S. C.;Gopal, R.;
10:190:10 Synthesis, optical properties and growth mechanism of MnO nano structures
DOI:10.1016/j.apsusc.2013.06.126 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Pandey, B. K.;Shahi, A. K.;Gopal, R.;
10:190:11 Nanosecond laser irradiation synthesis of CdS nanoparticles in a PVA system
DOI:10.1016/j.apsusc.2013.10.165 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Onwudiwe, Damian C.;Krueger, Tjaart P. J.;Oluwatobi, Oluwafemi S.;Strydom, Christien A.;
10:190:12 Synthesis, characterization, and measurement of structural, optical, and phtotoluminescent properties of zinc sulfide quantum dots
DOI:10.1016/j.mssp.2012.09.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:7 AU: Goharshadi, Elaheh K.;Mehrkhah, Roya;Nancarrow, Paul;
10:190:13 Laser-assisted synthesis, and structural and thermal properties of ZnS nanoparticles stabilised in polyvinylpyrrolidone
DOI:10.1016/j.apsusc.2014.10.022 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Onwudiwe, Damian C.;Krueger, Tjaart P. J.;Jordaan, Anine;Strydom, Christien A.;
10:190:14 Synthesis and photoluminescence properties of hydrophilic ZnS nanoparticles
DOI:10.1016/j.matlet.2010.04.009 JN:MATERIALS LETTERS PY:2010
TC:13 AU: Zhang, Yue;Liang, Xihui;Li, Langchen;
10:190:15 PEG mediated solvothermal synthesis of fine ZnS sub-micro and microspheres and their optical properties
DOI:10.1016/j.matlet.2013.10.099 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Shahi, A. K.;Pandey, B. K.;Gopal, R.;
10:190:16 Synthesis of size tuneable cadmium sulphide nanoparticles from a single source precursor using ammonia as the solvent
DOI:10.1016/j.materresbull.2011.08.062 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:6 AU: Zhang, Wei-Min;Sun, Zhong-Xi;Hao, Wei;Su, Da-Wei;Vaughan, David J.;
10:190:17 Formation and morphological investigation of petal-like cadmium sulphide nanostructures
DOI:10.1016/j.optmat.2013.04.020 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Nisha, K. D.;Navaneethan, M.;Dhanalakshmi, B.;Hayakawa, Y.;Ponnusamy, S.;Muthamizhchelvan, C.;
10:191:1 One-Dimensional Metal-Oxide Nanostructures: Recent Developments in Synthesis, Characterization, and Applications
DOI:10.1002/adfm.201201008 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:168 AU: Devan, Rupesh S.;Patil, Ranjit A.;Lin, Jin-Han;Ma, Yuan-Ron;
10:191:2 A Novel Avenue to Gold Nanostructured Microtubes Using Functionalized Fiber as the Ligand, the Reductant, and the Template
DOI:10.1021/am4022574b JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:2 AU: Ma, Hongjuan;Chi, Hongying;Wu, Jingxia;Wang, Min;Li, Jingye;Hoshina, Hiroyuki;Saiki, Seiichi;Seko, Noriaki;
10:191:3 Large-area nanoscale farmland-like surfaces of one-dimensional NbO2 nanorods with multi-growth directions: studies on the purple-blue photoluminescence and low-field electron emissions
DOI:10.1039/c4tc01347f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Lin, Jin-Han;Patil, Ranjit A.;Wu, Ming-Ann;Yu, Lian-Guang;Liu, Ken-Da;Gao, Wan-Ting;Devan, Rupesh S.;Ho, Ching-Hwa;Liou, Yung;Ma, Yuan-Ron;
10:191:4 Synthesis of niobium oxide nanowires using an atmospheric pressure plasma jet
DOI:10.1016/j.tsf.2010.12.024 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Lin, Yun;Yang, Yao-Jhen;Hsu, Cheng-che;
10:191:5 Aerosol assisted chemical vapour deposition of gas-sensitive nanomaterials
DOI:10.1016/j.tsf.2013.04.090 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Ezahra Annanouch, Fatima;Vallejos, Stella;Stoycheva, Toni;Blackman, Christopher;Llobet, Eduard;
10:191:6 Thermal oxidation mechanism and stress evolution in Ta thin films
DOI:10.1557/JMR.2010.0157 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:2 AU: Jin, Yusung;Song, Jae Yong;Jeong, Soo-Hwan;Kim, Jeong Won;Lee, Tae Geol;Kim, Ju Hwang;Hahn, Junhee;
10:192:1 Opto-electronic properties of molybdenum doped indium tin oxide nanostructured thin films prepared via sol-gel spin coating
DOI:10.1016/j.ceramint.2013.02.032 JN:CERAMICS INTERNATIONAL PY:2013
TC:12 AU: Mohammadi, Saeed;Abdizadeh, Hossein;Golobostanfard, Mohammad Reza;
10:192:2 Fabrication of Highly Transparent and Conductive Indium-Tin Oxide Thin Films with a High Figure of Merit via Solution Processing
DOI:10.1021/la4033282 JN:LANGMUIR PY:2013
TC:23 AU: Chen, Zhangxian;Li, Wanchao;Li, Ran;Zhang, Yunfeng;Xu, Guoqin;Cheng, Hansong;
10:192:3 Incorporating Carbon Nanotubes in Sol-Gel Synthesized Indium Tin Oxide Transparent Conductive Films
DOI:10.1021/Ia5031608 JN:LANGMUIR PY:2014
TC:0 AU: Golobostanfard, Mohammad Reza;Mohammadi, Saeed;Abdizadeh, Hossein;Baghchesara, Mohammad Amin;
10:192:4 Effect of niobium doping on opto-electronic properties of sol-gel based nano structured indium tin oxide thin films
DOI:10.1016/j.ceramint.2012.11.027 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Mohammadi, Saeed;Abdizadeh, Hossein;Golobostanfard, Mohammad Reza;
10:192:5 Effect of annealing treatment on electrical and optical properties of Nb doped TiO2 thin films as a TCO prepared by sol-gel spin coating method
DOI:10.1016/j.apsusc.2014.08.029 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Fallah, Milad;Zamani-Meymian, Mohammad-Reza;Rahimi, Rahmatollah;Rabbanib, Mahboubeh;
10:192:6 Effect of content silver and heat treatment temperature on morphological, optical, and electrical properties of ITO films by sol-gel technique
DOI:10.1007/s11051-014-2582-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Mirzaee, Majid;Dolati, Abolghasem;
10:192:7 Characterization of indium tin oxide (ITO) thin films prepared by a sol-gel spin coating process
DOI:10.1016/j.ceramint.2010.09.033 JN:CERAMICS INTERNATIONAL PY:2011
TC:21 AU: Cho, Hyun;Yun, Young-Hoon;
10:192:8 Preparation and characterization of Ga2xIn2(1-x)O3 films deposited on ZrO2 (100) substrates by MOCVD
DOI:10.1016/j.jallcom.2010.02.092 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Kong, Lingyi;Ma, Jin;Yang, Fan;Luan, Caina;Zhu, Zhen;
10:192:9 Surface morphology and conductivity of zirconium-doped nanostructured indium oxide films with various crystallographic features
DOI:10.1016/j.ceramint.2010.03.004 JN:CERAMICS INTERNATIONAL PY:2010
TC:13 AU: Liang, Yuan-Chang;
10:192:10 Comparison of hydrophilic properties of TiO2 thin films prepared by sol-gel method and reactive magnetron sputtering system
DOI:10.1016/j.tsf.2011.04.144 JN:THIN SOLID FILMS PY:2011
TC:21 AU: Nam, S. -H.;Cho, S. -J.;Jung, C. -K.;Boo, J. -H.;Sicha, J.;Herman, D.;Musil, J.;Vlcek, J.;
10:192:11 Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels
DOI:10.1016/j.jallcom.2010.05.068 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Kaleemulla, S.;Rao, N. Madhusudhana;Joshi, M. Girish;Reddy, A. Sivasankar;Uthanna, S.;Reddy, P. Sreedhara;
10:192:12 Mo-doped indium oxide films by dip-coating: Synthesis, microstructure and optical properties
DOI:10.1016/j.ceramint.2013.07.087 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Nanni, Francesca;Lamastra, Francesca Romana;Franceschetti, Fabio;Biccari, Francesco;Cacciotti, Ilaria;
10:192:13 Titanium dioxide prepared by APCVD for using as an interfacial layer in polymer solar cells
DOI:10.1016/j.jallcom.2013.12.031 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Hatem, D.;Belkaid, M. S.;
10:192:14 Superhydrophilic Transparent Titania Films by Supersonic Aerosol Deposition
DOI:10.1111/jace.12164 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:5 AU: Park, Jung-Jae;Kim, Do-Yeon;Lee, Jong-Gun;Kim, Donghwan;Oh, Joon-Ho;Seong, Tae-Yeon;van Hest, Maikel F. A. M.;Yoon, Sam S.;
10:192:15 Influence of annealing and Ag doping on structural and optical properties of indium tin oxide thin films
DOI:10.1116/1.3264478 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:3 AU: Cao, Chun-Bin;Xiao, Lei;Song, Xue-Ping;Sun, Zhao-Qi;
10:193:1 Na-Doped p-Type ZnO Microwires
DOI:10.1021/ja908521s JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:54 AU: Liu, Wei;Xiu, Faxian;Sun, Ke;Xie, Ya-Hong;Wang, Kang L.;Wang, Yong;Zou, Jin;Yang, Zheng;Liu, Jianlin;
10:193:2 Effect of (Li, Mn) co-doping on structural, optical and magnetic properties of chunk-shaped nano ZnO
DOI:10.1016/j.jallcom.2014.06.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Rajamanickam, N.;Mariammal, R. N.;Rajashabala, S.;Ramachandran, K.;
10:193:3 Temperature dependence of the optical band gap and electrical conductivity of sol-gel derived undoped and Li-doped ZnO films
DOI:10.1016/j.apsusc.2010.03.010 JN:APPLIED SURFACE SCIENCE PY:2010
TC:32 AU: Caglar, Mujdat;Caglar, Yasemin;Aksoy, Seval;Ilican, Saliha;
10:193:4 The effects of group-I elements co-doping with Mn in ZnO dilute magnetic semiconductor
DOI:10.1063/1.4729530 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Zhang, Liqiang;Zhang, Yinzhu;Ye, Zhizhen;Lu, Jianguo;Lu, Bin;He, Bo;
10:193:5 Ferromagnetic enhancement and magnetic anisotropy in nonpolar-oriented (Mn, Na)-codoped ZnO thin films
DOI:10.1063/1.4770290 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Lu, B.;Zhang, L. Q.;Lu, Y. H.;Ye, Z. Z.;Lu, J. G.;Pan, X. H.;Huang, J. Y.;
10:193:6 Defects related room temperature ferromagnetism in p-type (Mn, Li) co-doped ZnO films deposited by reactive magnetron sputtering
DOI:10.1016/j.apsusc.2009.10.086 JN:APPLIED SURFACE SCIENCE PY:2010
TC:18 AU: Zou, C. W.;Wang, H. J.;Yi, M. L.;Li, M.;Liu, C. S.;Guo, L. P.;Fu, D. J.;Kang, T. W.;
10:193:7 Unexpected positive role of oxygen vacancies in Na-doped ZnO
DOI:10.1063/1.4768279 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Yang, X. P.;Lu, J. G.;Zhang, H. H.;Lu, B.;Huang, J. Y.;Ye, C. L.;Ye, Z. Z.;
10:193:8 Non-polar p-type Zn0.94Mn0.05Na0.01O texture: Growth mechanism and codoping effect
DOI:10.1063/1.4792493 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Zhang, L. Q.;Lu, B.;Lu, Y. H.;Ye, Z. Z.;Lu, J. G.;Pan, X. H.;Huang, J. Y.;
10:193:9 Effects of rapid thermal annealing on the structural and electrical properties of Na-doped ZnMgO films
DOI:10.1016/j.apsusc.2011.01.048 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Xue, Ya;He, Haiping;Jin, Yizheng;Ye, Zhizhen;
10:193:10 Toward p-type conduction in Cs-doped ZnO: an eco-friendly synthesis method
DOI:10.1007/s10853-014-8442-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Ragupathi, Veena;Krishnaswamy, Srimathi;Sada, Senthilkumaar;Nagarajan, Ganapathi Subramanian;Raman, Sudarkodi;
10:193:11 Carrier type- and concentration-dependent absorption and photoluminescence of ZnO films doped with different Na contents
DOI:10.1016/j.mssp.2012.12.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Zheng, Z.;Lu, Y. F.;Ye, Z. Z.;He, H. P.;Zhao, B. H.;
10:194:1 Highly Efficient, Solar Active, and Reusable Photocatalyst: Zr-Loaded Ag-ZnO for Reactive Red 120 Dye Degradation with Synergistic Effect and Dye-Sensitized Mechanism
DOI:10.1021/la303842c JN:LANGMUIR PY:2013
TC:62 AU: Subash, B.;Krishnakumar, B.;Swaminathan, M.;Shanthi, M.;
10:194:2 An efficient nanostructured ZnO for dye sensitized degradation of Reactive Red 120 dye under solar light
DOI:10.1016/j.solmat.2010.11.029 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:67 AU: Velmurugan, R.;Swaminathan, M.;
10:194:3 Dilute magnetic semi-conductor properties of Ga/Al/Co-codoped ZnO oxides
DOI:10.1016/j.materresbull.2011.12.006 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:10 AU: Serier, H.;Toulemonde, O.;Bernard, D.;Demourgues, A.;Majimel, J.;Gaudon, M.;
10:194:4 Synthesis, characterization and catalytic activity of co-doped Ag-Au-ZnO for MB dye degradation under UV-A light
DOI:10.1016/j.mssp.2014.02.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:16 AU: Senthilraja, A.;Subash, B.;Krishnakumar, B.;Rajamanickam, D.;Swaminathan, M.;Shanthi, M.;
10:194:5 Synthesis and characterization of cerium-silver co-doped zinc oxide as a novel sunlight-driven photocatalyst for effective degradation of Reactive Red 120 dye
DOI:10.1016/j.mssp.2013.04.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:11 AU: Subash, B.;Krishnakumar, B.;Swaminathan, M.;Shanthi, M.;
10:194:6 Synthesis and characterization of novel WO3 loaded Ag-ZnO and its photocatalytic activity
DOI:10.1016/j.materresbull.2012.10.010 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:16 AU: Subash, B.;Krishnakumar, B.;Pandiyan, V.;Swaminathan, M.;Shanthi, M.;
10:194:7 An efficient nanosized strontium fluoride-loaded titania for azo dye (RY 84) degradation with solar light
DOI:10.1016/j.mssp.2013.01.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:8 AU: Subash, B.;Krishnakumar, B.;Velumurugan, R.;Balachandran, S.;Swaminathan, M.;
10:194:8 Preparation and characterization of carbon nanoparticles loaded TiO2 and its catalytic activity driven by natural sunlight
DOI:10.1016/j.solmat.2012.09.018 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:19 AU: Velmurugan, R.;Krishnakumar, B.;Subash, B.;Swaminathan, M.;
10:194:9 Highly active Zr co-doped Ag-ZnO photocatalyst for the mineralization of Acid Black 1 under UV-A light illumination
DOI:10.1016/j.matchemphys.2013.04.033 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:9 AU: Subash, B.;Krishnakumar, B.;Swaminathan, M.;Shanthi, M.;
10:194:10 A novel sunshine active cerium loaded zinc oxide photocatalyst for the effective degradation of AR 27 dye
DOI:10.1016/j.mssp.2014.08.046 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Kuzhalosai, V.;Subash, B.;Shanthi, M.;
10:194:11 Sonochemical synthesis and characterization of barium fluoride-titanium dioxide nanocomposites and activity for photodegradation of Trypan Blue dye
DOI:10.1016/j.mssp.2014.07.049 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Velmurugan, R.;Krishnakumar, B.;Swaminathan, M.;
10:194:12 Synthesis of Pd co-doped nano-TiO2-SO42- and its synergetic effect on the solar photodegradation of Reactive Red 120 dye
DOI:10.1016/j.mssp.2013.10.024 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Velmurugan, R.;Krishnakumar, B.;Swaminathan, M.;
10:194:13 Photodynamic action of curcumin derived polymer modified ZnO nanocomposites
DOI:10.1016/j.materresbull.2012.08.028 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Hariharan, R.;Senthilkumar, S.;Suganthi, A.;Rajarajan, M.;
10:195:1 Morphology, mechanism and optical properties of nanometer-sized MgO synthesized via facile wet chemical method
DOI:10.1016/j.matchemphys.2014.09.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Verma, Rajni;Naik, Kusha Kumar;Gangwar, Jitendra;Srivastava, Avanish Kumar;
10:195:2 NiO-based nanostructures with efficient optical and electrochemical properties for high-performance nanofluids
DOI:10.1088/0957-4484/24/41/415705 JN:NANOTECHNOLOGY PY:2013
TC:6 AU: Gangwar, Jitendra;Dey, Kajal Kumar;Tripathi, Surya Kant;Wan, Meher;Yadav, Raja Ram;Singh, Rajiv Kumar;Samta;Srivastava, Avanish Kumar;
10:195:3 Influence of cobalt doping on the crystalline structure, optical and mechanical properties of ZnO thin films
DOI:10.1016/j.tsf.2010.04.113 JN:THIN SOLID FILMS PY:2010
TC:27 AU: Bahadur, Nupur;Srivastava, A. K.;Kumar, Sushil;Deepa, M.;Nag, Bhavya;
10:195:4 Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(100) substrates by sol-gel process
DOI:10.1016/j.jallcom.2013.07.105 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Tian, Jianjun;Gao, Huiping;Deng, Hongmei;Sun, Lin;Kong, Hui;Yang, Pingxiong;Chu, Junhao;
10:195:5 Effect of nominal doping of Ag and Ni on the crystalline structure and photo-catalytic properties of meso porous titania
DOI:10.1016/j.matchemphys.2010.07.020 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:19 AU: Bahadur, Nupur;Jain, Kiran;Srivastava, A. K.;Govind;Gakhar, Ruchi;Haranath, Divi;Dulat, M. S.;
10:195:6 Air-stable n-type organic thin-film transistor array and high gain complementary inverter on flexible substrate
DOI:10.1063/1.3491815 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Fujisaki, Yoshihide;Nakajima, Yoshiki;Kumaki, Daisuke;Yamamoto, Toshihiro;Tokito, Shizuo;Kono, Takahiro;Nishida, Jun-ichi;Yamashita, Yoshiro;
10:195:7 Structural characterization and optical property of TiO2 powders prepared by the sol-gel method
DOI:10.1016/j.ceramint.2014.01.083 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: You, Y. F.;Xu, C. H.;Xu, S. S.;Cao, S.;Wang, J. P.;Huang, Y. B.;Shi, S. Q.;
10:195:8 Synthesis of iron-doped TiO2 nanoparticles by ball-milling process: the influence of process parameters on the structural, optical, magnetic, and photocatalytic properties
DOI:10.1007/s10853-014-8453-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:4 AU: Carneiro, J. O.;Azevedo, S.;Fernandes, F.;Freitas, E.;Pereira, M.;Tavares, C. J.;Lanceros-Mendez, S.;Teixeira, V.;
10:195:9 Effect of Ni doping on the microstructure and high Curie temperature ferromagnetism in sol-gel derived titania powders
DOI:10.1016/j.matchemphys.2012.01.068 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:11 AU: Bahadur, Nupur;Pasricha, Renu;Govind;Chand, Suresh;Kotnala, Ravinder Kumar;
10:195:10 Synthesis of one-dimensional beta-Ni(OH)(2) nanostructure and their application as nonenzymatic glucose sensors
DOI:10.1016/j.matchemphys.2011.11.041 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:14 AU: Luo, Zhijun;Yin, Sheng;Wang, Kun;Li, Huaming;Wang, Leigang;Xu, Hui;Xia, Jiexiang;
10:195:11 Dielectric and photocatalytic properties of sulfur doped TiO2 nanoparticles prepared by ball milling
DOI:10.1016/j.materresbull.2013.05.023 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:6 AU: Jalalah, Mohammed;Faisal, M.;Bouzid, Houcine;Ismail, Adel A.;Al-Sayari, Saleh A.;
10:195:12 Influence of annealing process on ferromagnetism of undoped TiO2 nanoparticles prepared by sol-gel method
DOI:10.1016/j.mssp.2014.01.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Wang, Qing;Wei, Xuegang;Dai, Jianfeng;Jiang, Jinlong;Huo, Xiaodi;
10:195:13 Facile photo-patterning of source and drain electrodes with photo-sensitive polyimide for organic thin-film transistors
DOI:10.1016/j.synthmet.2012.12.023 JN:SYNTHETIC METALS PY:2013
TC:1 AU: Yoon, Jun-Young;Wee, Duyoung;Kim, Yun Ho;Ka, Jae-Won;Jeong, Sunho;Hong, Sung-Kwon;Yi, Mi Hye;Jang, Kwang-Suk;
10:195:14 Enhanced conductivity of Y-doped ZnO thin films by incorporation of multiple walled carbon nanotubes
DOI:10.1016/j.tsf.2012.12.003 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Das, Sayantan;Vemuri, Rajitha N. P.;Alford, T. L.;
10:195:15 Crossover from incoherent to coherent electron tunneling between defects in MgO
DOI:10.1103/PhysRevB.86.245110 JN:PHYSICAL REVIEW B PY:2012
TC:11 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;
10:195:16 Atomic steps on the MgO(100) surface
DOI:10.1103/PhysRevB.87.165436 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Lu, S. R.;Yu, R.;Zhu, J.;
10:195:17 Preparation of boron-doped TiO2 films by autoclaved-sol method at low temperature and study on their photocatalytic activity
DOI:10.1016/j.tsf.2010.07.071 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Lu, Xiaona;Tian, Baozhu;Chen, Feng;Zhang, Jinlong;
10:196:1 Growth and characterization of ZnO nanowires grown on the Si(1 1 1) and Si(1 0 0) substrates: Optical properties and biaxial stress of nanowires
DOI:10.1016/j.mssp.2011.02.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:37 AU: Yousefi, Ramin;Zak, A. K.;
10:196:2 Opto-electrical properties of Sb-doped p-type ZnO nanowires
DOI:10.1063/1.4869355 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Kao, Tzu-Hsuan;Chen, Jui-Yuan;Chiu, Chung-Hua;Huang, Chun-Wei;Wu, Wen-Wei;
10:196:3 Influence of Sb as a catalyst in the growth of ZnO nano wires and nano sheets using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD)
DOI:10.1016/j.mseb.2011.09.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:17 AU: Palani, I. A.;Nakamura, D.;Okazaki, K.;Higashihata, M.;Okada, T.;
10:196:4 Synthesis and characterization of Sb doped ZnO thin films for photodetector application
DOI:10.1016/j.optmat.2013.12.007 JN:OPTICAL MATERIALS PY:2014
TC:8 AU: Mohite, S. V.;Rajpure, K. Y.;
10:196:5 Application of ultrasonic irradiation method for preparation of ZnO nanostructures doped with Sb+3 ions as a highly efficient photocatalyst
DOI:10.1016/j.apsusc.2013.03.118 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Omidi, Amir;Habibi-Yangjeh, Aziz;Pirhashemi, Mahsa;
10:196:6 Influence of Sb in synthesize of ZnO nanowire using sandwich type substrate in carbothermal evaporation method
DOI:10.1016/j.apsusc.2011.11.124 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Palani, I. A.;Okazaki, K.;Nakamura, D.;Sakai, K.;Higashihata, M.;Okada, T.;
10:196:7 Structural and optical properties of Sb-Al co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD) with Sb as catalyst
DOI:10.1016/j.jallcom.2012.02.177 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Palani, I. A.;Nakamura, D.;Okazaki, K.;Highasiata, M.;Okada, T.;
10:196:8 Structural and photoluminescence properties of aligned Sb-doped ZnO nanocolumns synthesized by the hydrothermal method
DOI:10.1016/j.tsf.2010.04.031 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Fang, Xuan;Li, Jinhua;Zhao, Dongxu;Li, Binghui;Zhang, Zhenzhong;Shen, Dezhen;Wang, Xiaohua;Wei, Zhipeng;
10:196:9 Nitrogen dioxide induced conductivity switching in ZnO thin film
DOI:10.1016/j.jallcom.2013.03.217 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Vyas, Rishi;Sharma, Sarla;Gupta, Parul;Prasad, Arun K.;Dhara, S. K.;Tyagi, A. K.;Sachdev, K.;Sharma, S. K.;
10:196:10 Study of structural and optical properties of Sb doped ZnO thin films deposited by spin coating method
DOI:10.1016/j.optmat.2010.02.011 JN:OPTICAL MATERIALS PY:2010
TC:13 AU: Benelmadjat, H.;Touka, N.;Harieche, B.;Boudine, B.;Halimi, O.;Sebais, M.;
10:196:11 The effect of heat treatment process on structure and properties of ZnO nano layer produced by sol-gel method
DOI:10.1016/j.mssp.2010.12.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:8 AU: Hejazi, Seyyed Mohammad Hossein;Majidi, Fatemeh;Tavandashti, Mohammad Pirhadi;Ranjbar, Mohammad;
10:196:12 Influence of Sb on a controlled-growth of aligned ZnO nanowires in nanoparticle-assisted pulsed-laser deposition
DOI:10.1007/s00339-011-6401-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Nakamura, D.;Okazaki, K.;Palani, I. A.;Higashihata, M.;Okada, T.;
10:196:13 Adsorption and photocatalytic degradation of methylene blue on Zn1-xCuxS nanoparticles prepared by a simple green method
DOI:10.1016/j.apsusc.2010.09.103 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Naghiloo, S.;Habibi-Yangjeh, A.;Behboudnia, M.;
10:196:14 Fabrication of ZnO nanorods using metal nanoparticles as growth nuclei
DOI:10.1016/j.mseb.2011.02.030 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:4 AU: Dikovska, A. Og.;Nedyalkov, N. N.;Atanasov, P. A.;
10:197:1 Effect of Mn doping on the microstructures and sensing properties of ZnO nanofibers
DOI:10.1016/j.apsusc.2014.01.133 JN:APPLIED SURFACE SCIENCE PY:2014
TC:13 AU: Mao, Yuzhen;Ma, Shuyi;Li, Xiangbing;Wang, Caiyun;Li, Faming;Yang, Xiaohong;Zhu, Jing;Ma, Lin;
10:197:2 C2H2 gas sensor based on Ni-doped ZnO electrospun nanofibers
DOI:10.1016/j.ceramint.2012.09.062 JN:CERAMICS INTERNATIONAL PY:2013
TC:24 AU: Wang, Xinchang;Zhao, Minggang;Liu, Fang;Jia, Jianfeng;Li, Xinjian;Cao, Liangliang;
10:197:3 CO gas sensing of Pd-doped ZnO nanofibers synthesized by electrospinning method
DOI:10.1016/j.matlet.2010.07.038 JN:MATERIALS LETTERS PY:2010
TC:39 AU: Wei, Shaohong;Yu, Yang;Zhou, Meihua;
10:197:4 Self-assembled hierarchical flowerlike ZnO architectures and their gas-sensing properties
DOI:10.1016/j.powtec.2011.10.032 JN:POWDER TECHNOLOGY PY:2012
TC:13 AU: Liu, Xianghong;Zhang, Jun;Yang, Taili;Wang, Liwei;Kang, Yanfei;Wang, Shurong;Wu, Shihua;
10:197:5 Porous spheres-like ZnO nanostructure as sensitive gas sensors for acetone detection
DOI:10.1016/j.matlet.2013.02.117 JN:MATERIALS LETTERS PY:2013
TC:28 AU: Li, X. B.;Ma, S. Y.;Li, F. M.;Chen, Y.;Zhang, Q. Q.;Yang, X. H.;Wang, C. Y.;Zhu, J.;
10:197:6 Low temperature operating In2-xNixO3 sensors with high response and good selectivity for NO2 gas
DOI:10.1016/j.jallcom.2013.07.168 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Chen, Yu;Zhu, Linghui;Feng, Caihui;Liu, Juan;Li, Chao;Wen, Shanpeng;Ruan, Shengping;
10:197:7 Structure-property relationship of sol-gel electrospun ZnO nanofibers developed for ammonia gas sensing
DOI:10.1016/j.jcis.2014.06.029 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:6 AU: Senthil, T.;Anandhan, S.;
10:197:8 Y-Doped ZnO Nanorods by Hydrothermal Method and Their Acetone Gas Sensitivity
DOI:10.1155/2013/751826 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Yu, Peng;Wang, Jing;Du, Hai-ying;Yao, Peng-jun;Hao, Yuwen;Li, Xiao-gan;
10:197:9 The mesoscopic structure of flower-like ZnO nanorods for acetone detection
DOI:10.1016/j.matlet.2014.01.155 JN:MATERIALS LETTERS PY:2014
TC:8 AU: Luo, J.;Ma, S. Y.;Li, F. M.;Li, X. B.;Li, W. Q.;Cheng, L.;Mao, Y. Z.;Gz, D. J.;
10:197:10 Ethanol sensing enhancement by optimizing ZnO nanostructure: From 1D nanorods to 3D nanoflower
DOI:10.1016/j.matlet.2014.08.108 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Luo, J.;Ma, S. Y.;Sun, A. M.;Cheng, L.;Yang, G. J.;Wang, T.;Li, W. Q.;Li, X. B.;Mao, Y. Z.;Gz, D. J.;
10:197:11 Synthesis and acetone sensing properties of Ce-doped ZnO nanofibers
DOI:10.1016/j.matlet.2013.09.094 JN:MATERIALS LETTERS PY:2014
TC:9 AU: Wan, G. X.;Ma, S. Y.;Li, X. B.;Li, F. M.;Bian, H. Q.;Zhang, L. P.;Li, W. Q.;
10:197:12 Controllable synthesis of prism- and lamella-like ZnO and their gas sensing
DOI:10.1016/j.matlet.2014.08.077 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Du, Jianping;Yao, Huanli;Zhao, Ruihua;Wang, Heyan;Xie, Yajuan;Li, Jinping;
10:197:13 ZnO-Ag ceramics for ethanol sensors
DOI:10.1016/j.ceramint.2012.08.080 JN:CERAMICS INTERNATIONAL PY:2013
TC:4 AU: Lyashkov, A. Yu.;Tonkoshkur, A. S.;Aguilar-Martinez, J. A.;Glot, A. B.;
10:197:14 Fabrication of Pt/CeO2 nanofibers for use in water-gas shift reaction
DOI:10.1016/j.matlet.2012.02.122 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Tang, Huijuan;Sun, Haiyan;Chen, Dairong;Jiao, Xiuling;
10:197:15 Gas sensitivity of ZnO-based ceramics to vapors of saturated monohydric alcohols
DOI:10.1016/j.matchemphys.2013.02.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Lyashkov, A. Yu.;Tonkoshkur, A. S.;
10:198:1 Effects of the annealing temperature and atmosphere on the microstructures and dielectric properties of ZnO/Al2O3 composite coatings
DOI:10.1016/j.apsusc.2013.08.096 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Wei, Ping;Zhu, Dongmei;Huang, Shanshan;Zhou, Wancheng;Luo, Fa;
10:198:2 Pencil-like zinc oxide micro/nano-scale structures: Hydrothermal synthesis, optical and photocatalytic properties
DOI:10.1016/j.materresbull.2013.05.116 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Moulahi, A.;Sediri, F.;
10:198:3 Reversible band gap tuning of metal oxide films using hydrogen and oxygen plasmas
DOI:10.1016/j.tsf.2012.12.044 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Peng, Jr-Wei;Liu, Po-Chun;Lee, Szetsen;
10:198:4 Defects at oxygen plasma cleaned ZnO polar surfaces
DOI:10.1063/1.3514102 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Dong, Yufeng;Fang, Z. -Q.;Look, D. C.;Doutt, D. R.;Cantwell, G.;Zhang, J.;Song, J. J.;Brillson, Leonard J.;
10:198:5 Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films
DOI:10.1016/j.tsf.2011.07.004 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Tang, W. M.;Greiner, M. T.;Lu, Z. H.;Ng, W. T.;Nam, H. G.;
10:198:6 Synthesis, characterization and optical properties of a red organic-inorganic phosphor based on terephthalate intercalated Zn/Al/Eu layered double hydroxide
DOI:10.1016/j.jallcom.2013.09.168 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Gao, Xiaorui;Lei, Lixu;Kang, Lianwei;Wang, Yuqiao;Lian, Yiwei;Jiang, Kangle;
10:198:7 Effects of additive gases and plasma post-treatment on electrical properties and optical transmittance of ZnO thin films
DOI:10.1016/j.tsf.2010.08.088 JN:THIN SOLID FILMS PY:2010
TC:15 AU: Bang, Jung-Hwan;Uhm, Hyun-Seok;Kim, Won;Park, Jin-Seok;
10:198:8 Ultrafast and mass production of ZnO nanotetrapods by induction-heating under air ambient
DOI:10.1016/j.matlet.2013.12.077 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Zhao, Guoliang;Xia, Long;Wu, Songsong;Song, Liang;Wei, Aoran;Wen, Guangwu;
10:198:9 Reversible tuning of ZnO optical band gap by plasma treatment
DOI:10.1016/j.matchemphys.2011.09.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:3 AU: Lee, Szetsen;Peng, Jr-Wei;Ho, Ching-Yuan;
10:198:10 Effects of co-sputtering powers on the properties of silicon-incorporated zinc oxide used as a channel layer of thin film transistors
DOI:10.1016/j.tsf.2013.08.073 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Lee, Sang-Hyuk;Kim, Won;Park, Jin-Seok;
10:198:11 Field-emission properties of patterned ZnO nanowires on 2.5D MEMS substrate
DOI:10.1007/s00339-010-5981-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Park, Seung-Beum;Kim, Byeong-Guk;Kim, Jeong-Yeon;Jung, Tae-Hwan;Lim, Dong-Gun;Park, Jae-Hwan;Park, Jae-Gwan;
10:198:12 Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films
DOI:10.1016/j.apsusc.2010.10.053 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Oh, Joon-Ho;Kim, Kyoung-Kook;Seong, Tae-Yeon;
10:198:13 Investigation of the effects of atomic oxygen exposure on the electrical and field emission properties of ZnO nanowires
DOI:10.1016/j.apsusc.2012.12.100 JN:APPLIED SURFACE SCIENCE PY:2013
TC:13 AU: Zhao, C. X.;Huang, K.;Deng, S. Z.;Xu, N. S.;Chen, Jun;
10:198:14 Improvement of the crystallinity and photocatalytic property of zinc oxide as calcination product of Zn-Al layered double hydroxide
DOI:10.1016/j.jallcom.2012.05.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:15 AU: Ahmed, Abdullah Ahmed Ali;Talib, Zainal Abidin;bin Hussein, Mohd Zobir;Zakaria, Azmi;
10:198:15 Effects of additive hydrogen gas on the instability due to air exposure in ZnO-based thin film transistors
DOI:10.1016/j.tsf.2011.08.051 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Lee, Sang-Hyuk;Bang, Jung-Hwan;Kim, Won;Uhm, Hyun-Seok;Park, Jin-Seok;
10:198:16 Tracking Luminescence of ZnO During Electron Beam Irradiation
DOI:10.1007/s11664-014-3066-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Todd, Devin M. J.;Clark, Jerry D.;Farlow, G. C.;
10:199:1 Transport, electronic, and structural properties of nanocrystalline CuAlO2 delafossites
DOI:10.1103/PhysRevB.83.045202 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Dura, O. J.;Boada, R.;Rivera-Calzada, A.;Leon, C.;Bauer, E.;Lopez de la Torre, M. A.;Chaboy, J.;
10:199:2 In-Depth Understanding of the Relation between CuAlO2 Particle Size and Morphology for Ozone Gas Sensor Detection at a Nanoscale Level
DOI:10.1021/am507158z JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Thirumalairajan, S.;Mastelaro, Valmor R.;Escanhoela, Carlos A., Jr.;
10:199:3 Rapid synthesis and electrical transition in p-type delafossite CuAlO2
DOI:10.1039/c4tc01349b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Mudenda, Steven;Kale, Girish M.;Hara, Yotamu R. S.;
10:199:4 Tuning the formation of p-type defects by peroxidation of CuAlO2 films
DOI:10.1063/1.4816044 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Luo, Jie;Lin, Yow-Jon;Hung, Hao-Che;Liu, Chia-Jyi;Yang, Yao-Wei;
10:199:5 Development of phase-pure CuAlO2 thin films grown on c-plane sapphire substrates prepared by RF sputtering
DOI:10.1016/j.jcrysgro.2011.06.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Su, Chun-Tsung;Lee, Hsin-Yen;Wu, Bin-Kun;Chern, Ming-Yau;
10:199:6 Phase development and crystallization of CuAlO2 thin films prepared by pulsed laser deposition
DOI:10.1016/j.jeurceramsoc.2009.05.025 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:20 AU: Lee, Jong-Chul;Um, Se-Young;Heo, Young-Woo;Lee, Joon-Hyung;Kim, Jeong-Joo;
10:199:7 Synthesis of delafossite CuAlO2 p-type semiconductor with a nanoparticle-based Cu(I) acetate-loaded boehmite precursor
DOI:10.1016/j.materresbull.2011.07.047 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:12 AU: Thu, Tran V.;Thanh, Pham D.;Suekuni, Koichiro;Hai, Nguyen H.;Mott, Derrick;Koyano, Mikio;Maenosono, Shinya;
10:199:8 Delafossite-CuAlO2 films prepared by annealing of amorphous Cu-Al-O films at high temperature under controlled atmosphere
DOI:10.1016/j.tsf.2011.03.041 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Chen, Hong-Ying;Tsai, Ming-Wei;
10:199:9 Effect of oxygen partial pressure on the structure and properties of Cu-Al-O thin films
DOI:10.1016/j.apsusc.2012.02.003 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Zhang, Yongjian;Liu, Zhengtang;Feng, Liping;Zang, Duyang;
10:199:10 Scalable synthesis of delafossite CuAlO2 nanoparticles for p-type dye-sensitized solar cells applications
DOI:10.1016/j.jallcom.2013.12.199 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:10 AU: Ahmed, Jahangeer;Blakely, Colin K.;Prakash, Jai;Bruno, Shaun R.;Yu, Mingzhe;Wu, Yiying;Poltavets, Viktor V.;
10:199:11 The photoconductivity properties of transparent Ni doped CuAlO2 films
DOI:10.1016/j.matlet.2013.01.013 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Pan, Jiaqi;Guo, Shikuan;Zhang, Xin;Feng, Boxue;Lan, Wei;
10:199:12 Role of oxygen in structural properties of annealed CuAlO2 films
DOI:10.1016/j.jcrysgro.2010.11.172 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Lan, W.;Pan, J. Q.;Zhu, C. Q.;Wang, G. Q.;Su, Q.;Liu, X. Q.;Xie, E. Q.;Yan, H.;
10:199:13 DC reactive magnetron sputtering, annealing, and characterization of CuAlO2 thin films
DOI:10.1116/1.3525640 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:6 AU: Stevens, Blake L.;Hoel, Cathleen A.;Swanborg, Carolyn;Tang, Yang;Zhou, Chuanle;Grayson, Matthew;Poeppelmeier, Kenneth R.;Barnett, Scott A.;
10:199:14 Solid state synthesis of nano-boehmite-derived CuAlO2 powder and processing of the ceramics
DOI:10.1016/j.jeurceramsoc.2013.05.025 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2013
TC:6 AU: Vojisavljevic, K.;Malic, B.;Senna, M.;Drnovsek, S.;Kosec, M.;
10:199:15 Synthesis of the p-type semiconducting ternary oxide CuAlO2 using the Pechini method
DOI:10.1016/j.materresbull.2013.06.003 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Jarman, Richard H.;Bafia, Julie;Gebreslasse, Tsige;Ingram, Brian J.;Carter, J. David;
10:199:16 Synthesis and characterization of mixed phases in the Ca-Co-O system using the Pechini method
DOI:10.1016/j.materresbull.2013.02.060 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:6 AU: Tran, Hoa;Mehta, Tejas;Zeller, Matthias;Jarman, Richard H.;
10:199:17 Growth conditions of CuAlO2 films - Thermodynamic considerations
DOI:10.1016/j.tsf.2011.04.162 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Neumann-Spallart, M.;Pinto, R.;
10:199:18 Effects of RF power on the growth behaviors of CuAlO2 thin films
DOI:10.1016/j.ceramint.2014.02.003 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Hsieh, Ping-Hung;Lu, Yang-Ming;Hwang, Weng-Sing;
10:199:19 Properties of CuAlO2 thin films deposited by polyacrylamide gel route
DOI:10.1016/j.mssp.2012.07.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Murali, K. R.;Balasubramanian, M.;
10:200:1 Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy
DOI:10.1016/j.apsusc.2009.12.160 JN:APPLIED SURFACE SCIENCE PY:2010
TC:32 AU: Yang, L. L.;Zhao, Q. X.;Willander, M.;Liu, X. J.;Fahlman, M.;Yang, J. H.;
10:200:2 Surface effects on the optical and photocatalytic properties of graphene-like ZnO:Eu3+ nanosheets
DOI:10.1063/1.4776225 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Yang, Lili;Wang, Zhe;Zhang, Zhiqiang;Sun, Yunfei;Gao, Ming;Yang, Jinghai;Yan, Yongsheng;
10:200:3 Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications
DOI:10.1016/j.apsusc.2011.08.128 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Shin, Beom-Ki;Lee, Tae-Il;Park, Ji-Hyeon;Park, Kang-Il;Ahn, Kyung-Jun;Park, Sung-Kee;Lee, Woong;Myoung, Jae-Min;
10:200:4 Stability of the electro-optical properties and structural characteristics of H and Al co-doped ZnO films after heat treatment in H/Ar plasma
DOI:10.1016/j.ceramint.2014.04.020 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Liang, Chih-Hao;Hwang, Weng-Sing;
10:200:5 Preparation of amorphous Ga-Sn-Zn-O semiconductor thin films by RF-sputtering method
DOI:10.1016/j.mseb.2013.12.003 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:4 AU: Liang, Chih-Hao;Chau, Joseph Lik Hang;Yang, Chih-Chao;Shih, Hsi-Hsin;
10:200:6 Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2010.03.044 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Mitsugi, Fumiaki;Umeda, Yoshihiro;Sakai, Norihiro;Ikegami, Tomoaki;
10:200:7 Indirect interaction in Ag and Pd adsorbed layers on the Mo(1 1 2) surface
DOI:10.1016/j.apsusc.2012.11.060 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Sliwinski, J.;Wiejak, M.;Kolaczkiewicz, J.;Yakovkin, I. N.;
10:200:8 Indirect optical transition due to surface band bending in ZnO nanotubes
DOI:10.1063/1.3511345 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Yang, L. L.;Zhao, Q. X.;Israr, M. Q.;Sadaf, J. R.;Willander, M.;Pozina, G.;Yang, J. H.;
10:200:9 Preparation of thin Ga-doped ZnO layers for core-shell GaP/ZnO nanowires
DOI:10.1016/j.apsusc.2012.04.100 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Novak, J.;Novotny, I.;Kovac, J.;Elias, P.;Hasenoehrl, S.;Krizanova, Z.;Vavra, I.;Stoklas, R.;
10:200:10 Influence of film thickness on the texture, morphology and electro-optical properties of indium tin oxide films
DOI:10.1016/j.tsf.2010.07.095 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Liang, Chih-Hao;Chen, Sheng-Chau;Qi, Xiaoding;Chen, Chi-San;Yang, Chih-Chao;
10:200:11 Concentration-dependent behavior of hydrogen in Al-doped ZnO thin films
DOI:10.1016/j.jallcom.2011.04.070 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Zhao, Lin;Shao, Guang-Jie;Qin, Xiu-Juan;Han, Si-Hui-Zhi;
10:200:12 Hydrogen-related n-type conductivity in hydrothermally grown epitaxial ZnO films
DOI:10.1063/1.3500353 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Zhang, Y. B.;Goh, G. K. L.;Ooi, K. F.;Tripathy, S.;
10:200:13 Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization
DOI:10.1016/j.apsusc.2012.10.051 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Dujavova-Laurencikova, A.;Hasenoehrl, S.;Elias, P.;Stoklas, R.;Blaho, M.;Novotny, I.;Krizanova, Z.;Novak, J.;
10:200:14 Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires
DOI:10.1016/j.apsusc.2014.05.198 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Novak, J.;Sutta, P.;Vavra, I.;Elias, P.;Hasenoehrl, S.;Laurencikova, A.;Novotny, I.;
10:200:15 Fast deposition of microcrystalline Si films from SiH2Cl2 using a high-density microwave plasma source for Si thin-film solar cells
DOI:10.1016/j.solmat.2009.11.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:6 AU: Saha, Jhantu Kumar;Ohse, Naoyuki;Hamada, Kazu;Matsui, Hiroyuki;Kobayashi, Tomohiro;Jia, Haijun;Shirai, Hajime;
10:201:1 Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients
DOI:10.1063/1.3693612 JN:APPLIED PHYSICS LETTERS PY:2012
TC:12 AU: Quemener, V.;Vines, L.;Monakhov, E. V.;Svensson, B. G.;
10:201:2 Effects of thermal annealing on variations of electron traps in the channel region of amorphous In-Ga-Zn-O thin film transistor
DOI:10.1116/1.4876155 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: Hino, Aya;Takanashi, Yasuyuki;Tao, Hiroaki;Morita, Shinya;Ochi, Mototaka;Goto, Hiroshi;Hayashi, Kazushi;Kugimiya, Toshihiro;
10:201:3 The E3 center in zinc oxide: Evidence for involvement of hydrogen
DOI:10.1063/1.4867908 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Hupfer, A.;Bhoodoo, C.;Vines, L.;Svensson, B. G.;
10:201:4 A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
DOI:10.1063/1.4796139 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Mtangi, W.;Schmidt, M.;Auret, F. D.;Meyer, W. E.;van Rensburg, P. J. Janse;Diale, M.;Nel, J. M.;Das, A. G. M.;Ling, F. C. C.;Chawanda, A.;
10:201:5 Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators
DOI:10.1063/1.4769803 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Hino, Aya;Morita, Shinya;Yasuno, Satoshi;Kishi, Tomoya;Hayashi, Kazushi;Kugimiya, Toshihiro;
10:201:6 The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress
DOI:10.1063/1.3429588 JN:APPLIED PHYSICS LETTERS PY:2010
TC:27 AU: Jung, Ji Sim;Son, Kyoung Seok;Lee, Kwang-Hee;Park, Joon Seok;Kim, Tae Sang;Kwon, Jang-Yeon;Chung, Kwun-Bum;Park, Jin-Seong;Koo, Bonwon;Lee, Sangyun;
10:201:7 Electronic properties of vacancy related defects in ZnO induced by mechanical polishing
DOI:10.1063/1.3638470 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Quemener, V.;Vines, L.;Monakhov, E. V.;Svensson, B. G.;
10:201:8 On the radiation hardness of (Mg,Zn)O thin films grown by pulsed-laser deposition
DOI:10.1063/1.4733358 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Schmidt, Florian;von Wenckstern, Holger;Spemann, Daniel;Grundmann, Marius;
10:201:9 A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques
DOI:10.1063/1.3658027 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Mtangi, W.;Auret, F. D.;van Rensburg, P. J. Janse;Coelho, S. M. M.;Legodi, M. J.;Nel, J. M.;Meyer, W. E.;Chawanda, A.;
10:201:10 Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals
DOI:10.1063/1.4817824 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Schmidt, F.;Mueller, S.;von Wenckstern, H.;Dietrich, C. P.;Heinhold, R.;Kim, H-S.;Allen, M. W.;Grundmann, M.;
10:201:11 Acceptor-like deep level defects in ion-implanted ZnO
DOI:10.1063/1.4720514 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Vines, L.;Wong-Leung, J.;Jagadish, C.;Quemener, V.;Monakhov, E. V.;Svensson, B. G.;
10:201:12 Iron related donor-like defect in zinc oxide
DOI:10.1063/1.4809941 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Quemener, V.;Vines, L.;Monakhov, E. V.;Svensson, B. G.;
10:201:13 Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation Displays
DOI:10.1007/s11664-012-2425-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Vinh Ai Dao;Thanh Thuy Trinh;Jang, Kyungsoo;Ryu, Kyungyul;Yi, Junsin;
10:201:14 Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS
DOI:10.1063/1.4709728 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Mtangi, W.;Auret, F. D.;Meyer, W. E.;Legodi, M. J.;van Rensburg, P. J. Janse;Coelho, S. M. M.;Diale, M.;Nel, J. M.;
10:201:15 Effects of high temperature annealing on single crystal ZnO and ZnO devices
DOI:10.1063/1.3700186 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Mtangi, W.;Auret, F. D.;Diale, M.;Meyer, W. E.;Chawanda, A.;de Meyer, H.;van Rensburg, P. J. Janse;Nel, J. M.;
10:201:16 Defect properties of ZnO and ZnO:P microwires
DOI:10.1063/1.3530610 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Dietrich, Christof P.;Brandt, Matthias;Lange, Martin;Kupper, Johannes;Boentgen, Tammo;von Wenckstern, Holger;Grundmann, Marius;
10:202:1 Effect of doping concentration on the properties of aluminium doped zinc oxide thin films prepared by spray pyrolysis for transparent electrode applications
DOI:10.1016/j.ceramint.2010.09.042 JN:CERAMICS INTERNATIONAL PY:2011
TC:48 AU: Muiva, C. M.;Sathiaraj, T. S.;Maabong, K.;
10:202:2 Boron doped ZnO thin films fabricated by RF-magnetron sputtering
DOI:10.1016/j.apsusc.2010.10.009 JN:APPLIED SURFACE SCIENCE PY:2011
TC:41 AU: Gao, Li;Zhang, Yan;Zhang, Jian-Min;Xu, Ke-Wei;
10:202:3 Effect of dopants and thermal treatment on properties of Ga-Al-ZnO thin films fabricated by hetero targets sputtering system
DOI:10.1016/j.tsf.2013.01.089 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Hong, JeongSoo;Matsushita, Nobuhiro;Kim, KyungHwan;
10:202:4 Properties of ITO/Ga-Al Doped ZnO Bilayer Thin Film for Saving ITO Material
DOI:10.1080/15421406.2014.944363 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Jung, Yu Sup;Choi, Hyung Wook;Kim, Kyung Hwan;
10:202:5 Effects of intermediate metal layer on the properties of Ga-Al doped ZnO/metal/Ga-Al doped ZnO multilayers deposited on polymer substrate
DOI:10.1016/j.materresbull.2012.04.104 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:8 AU: Jung, Yu Sup;Kim, Kyung Hwan;
10:202:6 Transparent conductive ZnO:B films deposited by magnetron sputtering
DOI:10.1016/j.tsf.2012.05.014 JN:THIN SOLID FILMS PY:2012
TC:14 AU: Huang, Qian;Wang, Yanfeng;Wang, Shuo;Zhang, Dekun;Zhao, Ying;Zhang, Xiaodan;
10:202:7 Effects of intermediate GAZO layer thickness on the properties of GAZO/Ag/GAZO/Ag/GAZO film
DOI:10.1016/j.tsf.2013.08.098 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Jung, Yu Sup;Choi, Hyung Wook;Kim, Kyung Hwan;
10:202:8 Fabrication of Tantalum and Nitrogen Codoped ZnO (Ta, N-ZnO) Thin Films Using the Electrospay: Twin Applications as an Excellent Transparent Electrode and a Field Emitter
DOI:10.1021/am4003342 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Mahmood, Khalid;Park, Seung Bin;Sung, Hyung Jin;
10:202:9 Preparation of ZnO Based Thin Films for OLED Anode by Facing Targets Sputtering System
DOI:10.1080/15421406.2011.563666 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2011
TC:7 AU: Hong, Jeong Soo;Jang, Kyung Wook;Park, Yong Seo;Choi, Hyung Wook;Kim, Kyung Hwan;
10:202:10 Properties of Ga-Al Doped ZnO with Various Thicknesses Prepared by Facing Targets Sputtering Method
DOI:10.1080/15421406.2012.701832 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:3 AU: Jung, Yu Sup;Choi, Hyung-Wook;Kim, Kyung Hwan;Bark, Chung Wung;
10:202:11 Conductivity enhancement by fluorine doping in boron-doped ZnO thin films deposited by the electrospraying method
DOI:10.1016/j.jcrysgro.2012.08.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Mahmood, Khalid;Park, Seung Bin;
10:202:12 Characteristics of Ga-Al Doped Zinc Oxide Thin Films Deposited by Facing Targets Sputtering
DOI:10.1080/15421406.2014.936772 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Lee, Jin Seon;Jung, Yu Sup;Bark, Chung Wung;Kim, Kyung Hwan;
10:202:13 Transparent Al-doped ZnO anodes in organic light-emitting diodes investigated using a hole-only device
DOI:10.1016/j.apsusc.2012.08.014 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Tseng, Zong-Liang;Kao, Po-Ching;Yang, Chi-Shin;Juang, Yung-Der;Chu, Sheng-Yuan;
10:202:14 Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering
DOI:10.1116/1.3624787 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:3 AU: Shantheyanda, B. P.;Todi, V. O.;Sundaram, K. B.;Vijayakumar, A.;Oladeji, I.;
10:202:15 Effect of Post Annealing in Various Atmospheric Environment Applied to ZnO:Ga Films
DOI:10.1080/15421406.2012.691698 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:3 AU: Lee, Kyu-Ho;Bark, Chung Wung;Choi, Hyung-Wook;Kim, Kyung Hwan;
10:202:16 Effect of fluorine addition on boron doped ZnO transparent electrode by room temperature spray method and thermal treatment
DOI:10.1016/j.matchemphys.2011.07.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:8 AU: Kim, Gil Ho;Hwang, Deok Hyun;Woo, Seong Ihl;
10:202:17 Optical and electrical properties of ZnO films, codoped with Al and Ga deposited at room temperature by an RF sputtering method
DOI:10.1016/j.tsf.2010.04.050 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Kim, Jong-Pil;Bae, Jong-Seong;Hong, Tae-Eun;Won, Mi-Sook;Yoon, Jang-Hee;Lee, Byoung-Seob;Lee, Haeng-Jung;
10:202:18 Influence of precursor type, deposition time and doping concentration on the morphological, electrical and optical properties of ZnO and ZnO:Al thin films grown by ultrasonic spray pyrolysis
DOI:10.1016/j.tsf.2013.10.015 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Kenanakis, G.;Katsarakis, N.;Koudoumas, E.;
10:203:1 ZnO Schottky barriers and Ohmic contacts
DOI:10.1063/1.3581173 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:138 AU: Brillson, Leonard J.;Lu, Yicheng;
10:203:2 Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition
DOI:10.1063/1.4836955 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Ma, Alex M.;Gupta, Manisha;Afshar, Amir;Shoute, Gem;Tsui, Ying Y.;Cadien, Kenneth C.;Barlage, Douglas W.;
10:203:3 Electrical characterization of Schottky contacts to n-MgZnO films
DOI:10.1016/j.tsf.2013.09.007 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Mohanta, S. K.;Nakamura, A.;Tabares, G.;Hierro, A.;Guzman, A.;Munoz, E.;Temmyo, J.;
10:203:4 Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes
DOI:10.1063/1.4871509 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Mao, Shimin;Shang, Tao;Park, Byoungnam;Anderson, Daniel D.;Dillon, Shen J.;
10:203:5 Schottky Barrier Thin Film Transistors Using Solution-Processed n-ZnO
DOI:10.1021/am201656h JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:12 AU: Adl, Ahmad H.;Ma, Alex;Gupta, Manisha;Benlamri, Mourad;Tsui, Ying Y.;Barlage, Douglas W.;Shankar, Karthik;
10:203:6 Simultaneous Electrical and Thermoelectric Parameter Retrieval via Two Terminal Current-Voltage Measurements on Individual ZnO Nanowires
DOI:10.1002/adfm.201100701 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:7 AU: Liu, Yang;Zhang, Zhiyong;Wei, Xianlong;Li, Quan;Peng, Lian-Mao;
10:203:7 Effect of ultrathin gold on the Ohmic-to-Schottky transition in Al/ZnO contacts: A first-principles investigation
DOI:10.1063/1.4862954 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Catellani, Alessandra;Calzolari, Arrigo;Ruini, Alice;
10:203:8 Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
DOI:10.1063/1.4880240 JN:AIP ADVANCES PY:2014
TC:0 AU: Xia, Minggang;Cheng, Zhaofang;Han, Jinyun;Zheng, Minrui;Sow, Chorng-Haur;Thong, John T. L.;Zhang, Shengli;Li, Baowen;
10:203:9 Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors
DOI:10.1063/1.3490208 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Ponce, M. A.;Ramirez, M. A.;Parra, R.;Malagu, C.;Castro, M. S.;Bueno, P. R.;Varela, J. A.;
10:203:10 Microstructural investigation of Ti/Au ohmic contacts on Ga doped single crystalline n-ZnO films
DOI:10.1016/j.mseb.2010.01.026 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Park, Jang-Ho;Kim, Tae-Hwan;Chang, Na-Young;Kim, Jeong-Sun;Kim, Geun-Hong;Lee, Byung-Teak;
10:203:11 ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
DOI:10.1063/1.4812475 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: von Hauff, P.;Afshar, A.;Foroughi-Abari, A.;Bothe, K.;Cadien, K.;Barlage, D.;
10:204:1 Enhanced NO2 sensing characteristics of Pd-functionalized networked In2O3 nanowires
DOI:10.1016/j.jallcom.2011.06.104 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Kim, Sang Sub;Park, Jae Young;Choi, Sun-Woo;Na, Han Gil;Yang, Ju Chan;Kim, Hyoun Woo;
10:204:2 Fabrication and magnetic properties of In2O3/NiMnGa core-shell nanowires
DOI:10.1016/j.tsf.2013.03.077 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Kim, Hyoun Woo;Na, Han Gil;Kwak, Dong Sub;Kwon, Yong Jung;Van Khai, Tran;Lee, Chongmu;Jung, Jong Hoon;
10:204:3 Preparation of heterostructured Ag/BaTiO3 nanofibers via electrospinning
DOI:10.1016/j.jallcom.2010.08.114 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Li, Heping;Sun, Yao;Zhang, Wei;Pan, Wei;
10:204:4 Structural and optical properties of Al-doped SnO2 nanowires
DOI:10.1016/j.matlet.2009.09.058 JN:MATERIALS LETTERS PY:2010
TC:27 AU: Lei, M.;Hu, Q. R.;Wang, S. L.;Tang, W. H.;
10:204:5 Synthesis and cathodoluminescence of In2O3-SnO2 nanowires heterostructures
DOI:10.1016/j.jallcom.2010.07.201 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Du, Yinxiao;Ding, Pei;
10:204:6 Single-crystalline polyhedral In2O3 vertical Fabry-Perot resonators
DOI:10.1063/1.3540650 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Dong, Hongxing;Sun, Shulin;Sun, Liaoxin;Xie, Wei;Zhou, Lei;Shen, Xuechu;Chen, Zhanghai;
10:204:7 Structural and optical properties of glancing angle deposited In2O3 columnar arrays and Si/In2O3 photodetector
DOI:10.1007/s00339-013-7835-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:5 AU: Mondal, A.;Shougaijam, B.;Goswami, T.;Dhar, J. C.;Singh, N. K.;Choudhury, S.;Chattopadhay, K. K.;
10:204:8 Preparation and annealing of GaN/Cu core-shell nanowires
DOI:10.1016/j.jallcom.2010.03.234 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Kim, Hyoun Woo;Kim, Hyo Sung;Na, Han Gil;Yang, Ju Chan;Lee, Chongmu;
10:204:9 Core-shell-structure Ag-SaTiO(3) composite nanopowders prepared directly by flame spray pyrolysis
DOI:10.1016/j.matchemphys.2013.03.033 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Choi, Seung Ho;Ko, You Na;Lee, Jung-Kul;Park, Byung Kyu;Kang, Yun Chan;
10:204:10 2D Like Photonic Crystal Using In2O3-SiOx Heterostructure Nanocolumn Arrays and Humidity Sensing
DOI:10.1007/s13391-014-3325-1 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Khelchand, Naorem;Choudhuri, Bijit;Mondal, Aniruddha;Dhar, Jay Chandra;Goswami, Tamal;Saha, Saptadip;Ngangbam, Chitralekha;
10:204:11 Selective growth of TiO2 tips on CdSe nanowires
DOI:10.1016/j.jallcom.2011.10.101 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:0 AU: Lei, M.;Zhang, Y. B.;Fu, X. L.;Yang, H. J.;Wang, Y. G.;
10:204:12 Solvothermal route to novel TiO2 capped ZnS nanowires
DOI:10.1016/j.matlet.2011.07.065 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Lei, M.;Zhang, Y. B.;Fu, X. L.;Huang, Y. T.;Zhang, L.;Xiao, J. H.;
10:204:13 Ferromagnetism in Cu-doped polar and nonpolar GaN surfaces
DOI:10.1016/j.commatsci.2013.11.024 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Gonzalez-Hernandez, Rafael;Gonzalez-Garcia, Alvaro;Lopez-Perez, William;
10:204:14 Fabrication and luminescence properties of In2O3-capped ZnS nanowires
DOI:10.1016/j.jallcom.2011.03.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:6 AU: Park, Sunghoon;Jin, Changhyun;Kim, Hyoun Woo;Lee, Chongmu;
10:204:15 Synthesis of Co-Doped ZnO Nanofibers and Their Magnetic Properties
DOI:10.1111/j.1551-2916.2011.04751.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:3 AU: Li, Heping;Qin, Xiaolu;Zhang, Wei;Pan, Wei;
10:204:16 Growth and characterization of PdO films obtained by thermal oxidation of nanometric Pd films by electroless deposition technique
DOI:10.1016/j.mseb.2010.03.064 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Garcia-Serrano, O.;Lopez-Rodriguez, C.;Andraca-Adame, J. A.;Romero-Paredes, G.;Pena-Sierra, R.;
10:204:17 Magnetic resonance on core-shell nanowires with notches
DOI:10.1063/1.3637042 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Xu, Lina;Zhang, Zhi-Jian;Lee, Bong Jae;
10:205:1 Model for determination of mid-gap states in amorphous metal oxides from thin film transistors
DOI:10.1063/1.4808457 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Bubel, S.;Chabinyc, M. L.;
10:205:2 Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide
DOI:10.1063/1.4824022 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Bubel, S.;Meyer, S.;Kunze, F.;Chabinyc, M. L.;
10:205:3 Electronic properties of polyvinylpyrrolidone at the zinc oxide nanoparticle surface PVP in ZnO dispersions and nanoparticulate ZnO thin films for thin film transistors
DOI:10.1007/s10853-011-5757-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:10 AU: Bubel, Simon;Mechau, Norman;Schmechel, Roland;
10:205:4 Charge transport in amorphous InGaZnO thin-film transistors
DOI:10.1103/PhysRevB.86.155319 JN:PHYSICAL REVIEW B PY:2012
TC:7 AU: Germs, W. Chr.;Adriaans, W. H.;Tripathi, A. K.;Roelofs, W. S. C.;Cobb, B.;Janssen, R. A. J.;Gelinck, G. H.;Kemerink, M.;
10:205:5 High performance low temperature solution-processed zinc oxide thin film transistor
DOI:10.1016/j.tsf.2011.02.073 JN:THIN SOLID FILMS PY:2011
TC:19 AU: Theissmann, R.;Bubel, S.;Sanlialp, M.;Busch, C.;Schierning, G.;Schmechel, R.;
10:205:6 Relationship between variable range hopping transport and carrier density of amorphous In2O3-10 wt. % ZnO thin films
DOI:10.1063/1.4745055 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Makise, Kazumasa;Shinozaki, Bunju;Asano, Takayuki;Mitsuishi, Kazutaka;Yano, Koki;Inoue, Kazuyoshi;Nakamura, Hiroaki;
10:205:7 Transparent, amorphous and organics-free ZnO thin films produced by chemical solution deposition at 150 degrees C
DOI:10.1016/j.tsf.2010.03.010 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Tellier, J.;Kuscer, D.;Malic, B.;Cilensek, J.;Skarabot, M.;Kovac, J.;Goncalves, G.;Musevic, I.;Kosec, M.;
10:205:8 Trap states and space charge limited current in dispersion processed zinc oxide thin films
DOI:10.1063/1.3524184 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Bubel, S.;Mechau, N.;Hahn, H.;Schmechel, R.;
10:205:9 Ink-Jet Printing of In2O3/ZnO Two-Dimensional Structures from Solution
DOI:10.1111/j.1551-2916.2011.04425.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:2 AU: Tellier, Jenny;Malic, Barbara;Kuscer, Danjela;Trefalt, Gregor;Kosec, Marija;
10:205:10 Electron weak localization and electron-electron interaction effects on magneto-conductivity in In-Ga-Zn oxide films
DOI:10.1016/j.tsf.2013.11.088 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Shinozaki, Bunju;Hidaka, Kazuya;Ezaki, Syouhei;Makise, Kazumasa;Asano, Takayuki;Tomai, Shigekazu;Yano, Koki;Nakamura, Hiroaki;
10:206:1 Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering
DOI:10.1016/j.jallcom.2012.03.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:27 AU: You, Z. Z.;Hua, G. J.;
10:206:2 UV assisted photoelectrocatalytic oxidation of phthalic acid using spray deposited Al doped zinc oxide thin films
DOI:10.1016/j.jallcom.2014.05.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Mahadik, M. A.;Shinde, S. S.;Hunge, Y. M.;Mohite, V. S.;Kumbhar, S. S.;Moholkar, A. V.;Rajpure, K. Y.;Bhosale, C. H.;
10:206:3 Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering
DOI:10.1016/j.apsusc.2014.01.163 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Zhu, D. L.;Wang, Q.;Han, S.;Cao, P. J.;Liu, W. J.;Jia, F.;Zeng, Y. X.;Ma, X. C.;Lu, Y. M.;
10:206:4 Temperature-dependent growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering
DOI:10.1016/j.apsusc.2013.03.069 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Zhang, Chi;Chen, Xin-liang;Geng, Xin-hua;Tian, Cong-sheng;Huang, Qian;Zhao, Ying;Zhang, Xiao-dan;
10:206:5 Fluorine-doped ZnO transparent conducting thin films prepared by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2010.03.086 JN:THIN SOLID FILMS PY:2010
TC:35 AU: Tsai, Yu-Zen;Wang, Na-Fu;Tsai, Chun-Lung;
10:206:6 Influence of annealing on the structural and optical properties of ZnO films grown by MOCVD
DOI:10.1016/j.jallcom.2011.03.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Su, Jianfeng;Wang, Changqing;Tang, Chunjuan;Niu, Qiang;Zhang, Yongsheng;Fu, Zhuxi;
10:206:7 Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films
DOI:10.1016/j.apsusc.2012.06.058 JN:APPLIED SURFACE SCIENCE PY:2012
TC:25 AU: Shinde, S. S.;Shinde, P. S.;Oh, Y. W.;Haranath, D.;Bhosale, C. H.;Rajpure, K. Y.;
10:206:8 ZnO:H indium-free transparent conductive electrodes for active-matrix display applications
DOI:10.1063/1.4903499 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, Shuming;Wang, Sisi;
10:206:9 Microstructure and optoelectronic properties of titanium-doped ZnO thin films prepared by magnetron sputtering
DOI:10.1016/j.matlet.2013.01.025 JN:MATERIALS LETTERS PY:2013
TC:11 AU: Zhong, Z. Y.;Zhang, T.;
10:206:10 Characterization of ZnO:Ga transparent contact electrodes for microcrystalline silicon thin film solar cells
DOI:10.1016/j.solmat.2009.12.002 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:17 AU: Lai, Kuang-Chieh;Liu, Chien-Chih;Lu, Chun-Hsiung;Yeh, Chih-Hung;Houng, Mau-Phon;
10:206:11 Structural, optical and electrical characterization of ZnO:Ga thin films for organic photovoltaic applications
DOI:10.1016/j.matlet.2011.06.117 JN:MATERIALS LETTERS PY:2011
TC:16 AU: You, Zhong Zhi;Hua, Gu Jin;
10:207:1 Structural and magnetic analysis of epitaxial films of Gd-doped ZnO
DOI:10.1103/PhysRevB.85.235203 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Ney, V.;Ye, S.;Kammermeier, T.;Ollefs, K.;Wilhelm, F.;Rogalev, A.;Lebegue, S.;da Rosa, A. L.;Ney, A.;
10:207:2 Intrinsic ferromagnetism and magnetic anisotropy in Gd-doped ZnO thin films synthesized by pulsed spray pyrolysis method
DOI:10.1063/1.3475992 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:23 AU: Subramanian, M.;Thakur, P.;Tanemura, M.;Hihara, T.;Ganesan, V.;Soga, T.;Chae, K. H.;Jayavel, R.;Jimbo, T.;
10:207:3 Effect of annealing on the structural, electrical and magnetic properties of Gd-implanted ZnO thin films
DOI:10.1007/s10853-011-5883-z JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:8 AU: Murmu, P. P.;Kennedy, J.;Ruck, B. J.;Williams, G. V. M.;Markwitz, A.;Rubanov, S.;Suvorova, A. A.;
10:207:4 Properties of nitrogen implanted and electron beam annealed bulk ZnO
DOI:10.1063/1.3380592 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Kennedy, J.;Carder, D. A.;Markwitz, A.;Reeves, R. J.;
10:207:5 Optical properties of (100) oriented ZnO:Gd films deposited by reactive radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2014.06.071 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Lan, Changyong;Lin, Boning;Jiang, Yuwen;Li, Chun;
10:207:6 Investigation of structural and photoluminescence properties of gas and metal ions doped zinc oxide single crystals
DOI:10.1016/j.jallcom.2014.07.179 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Kennedy, J.;Murmu, P. P.;Manikandan, E.;Lee, S. Y.;
10:207:7 Structural and photoluminescence properties of Gd implanted ZnO single crystals
DOI:10.1063/1.3619852 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Murmu, P. P.;Mendelsberg, R. J.;Kennedy, J.;Carder, D. A.;Ruck, B. J.;Markwitz, A.;Reeves, R. J.;Malar, P.;Osipowicz, T.;
10:207:8 The optical properties of rare earth Gd doped ZnO nanocrystals
DOI:10.1016/j.mssp.2011.05.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:12 AU: Ma, Xiying;Wang, Zui;
10:207:9 Observation of magnetism, low resistivity, and magnetoresistance in the near-surface region of Gd implanted ZnO
DOI:10.1063/1.4747525 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Murmu, P. P.;Kennedy, J.;Williams, G. V. M.;Ruck, B. J.;Granville, S.;Chong, S. V.;
10:207:10 The magnetic properties of Gd doped ZnO nanowires
DOI:10.1016/j.tsf.2012.04.046 JN:THIN SOLID FILMS PY:2012
TC:15 AU: Ma, Xiying;
10:207:11 White Light Emitting Magnetic ZnO:Sm Nanoparticles Prepared by Inclusive Co-Precipitation Synthesis
DOI:10.1007/s13391-013-3082-6 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:4 AU: Chawla, Santa;Saroha, Monica;Kotnala, R. K.;
10:207:12 Structural and magnetic properties of Gd-doped ZnO
DOI:10.1039/c4tc01237b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Bantounas, Ioannis;Singaravelu, Venkatesh;Roqan, Iman S.;Schwingenschloegl, Udo;
10:207:13 Study of Sm-doped ZnO samples sintered in a nitrogen atmosphere and deposited on n-Si(1 0 0) by evaporation technique
DOI:10.1016/j.jmmm.2011.07.021 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:7 AU: Rai, G. Murtaza;Iqbal, M. A.;Xu, Y. B.;Will, I. G.;Huang, Z. C.;
10:207:14 Electrical and microstructural properties of N+ ion-implanted ZnO and ZnO:Ag thin films
DOI:10.1116/1.3554836 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:1 AU: Myers, Michelle A.;Myers, Michael T.;Tsai, Chen-Fong;Lee, Joon Hwan;Lu, Tianlin;Shao, Lin;Wang, Haiyan;
10:207:15 Structure, optical and electrical properties of ZnO thin films on the flexible substrate by cathodic vacuum arc technology with different arc currents
DOI:10.1016/j.ceramint.2011.05.043 JN:CERAMICS INTERNATIONAL PY:2011
TC:5 AU: Weng, Min-Hang;Pan, Cheng-Tang;Yang, Ru-Yuan;Huang, Chun-Chih;
10:207:16 Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition
DOI:10.1016/j.jnoncrysol.2011.12.099 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Tsuji, Takahiro;Terai, Yoshikazu;bin Kamarudin, Muhammad Hakim;Kawabata, Masatoshi;Fujiwara, Yasufumi;
10:208:1 Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics
DOI:10.1021/nn204848r JN:ACS NANO PY:2012
TC:59 AU: Liu, Xi;Long, Yun-Ze;Liao, Lei;Duan, Xiangfeng;Fan, Zhiyong;
10:208:2 Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors
DOI:10.1021/nl401498t JN:NANO LETTERS PY:2013
TC:22 AU: Zou, Xuming;Wang, Jingli;Liu, Xingqiang;Wang, Chunlan;Jiang, Ying;Wang, Yong;Xiao, Xiangheng;Ho, Johnny C.;Li, Jinchai;Jiang, Changzhong;Fang, Ying;Liu, Wei;Liao, Lei;
10:208:3 Soluble Polymer-Based, Blown Bubble Assembly of Single- and Double-Layer Nanowires with Shape Control
DOI:10.1021/nn406610d JN:ACS NANO PY:2014
TC:2 AU: Wu, Shiting;Huang, Kai;Shi, Enzheng;Xu, Wenjing;Fang, Ying;Yang, Yanbing;Cao, Anyuan;
10:208:4 The role of tin oxide surface defects in determining nanonet FET response to humidity and photoexcitation
DOI:10.1039/c3tc31713g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Sun, Cheng;Karthik, K. R. G.;Pramana, Stevin S.;Wong, Lydia H.;Zhang, Jie;Huang Yizhong;Sow, Chorng Haur;Mathews, Nripan;Mhaisalkar, Subodh G.;
10:208:5 Transport Phenomena and Conduction Mechanism of Individual Cross-Junction SnO2 Nanobelts
DOI:10.1002/smll.201200672 JN:SMALL PY:2013
TC:1 AU: Guo, Zheng;Chen, Xing;Liu, Jin-Huai;Huang, Xing-Jiu;
10:208:6 V-doped In2O3 nanofibers for H2S detection at low temperature
DOI:10.1016/j.ceramint.2013.11.129 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Liu, Juan;Guo, Wenbin;Qu, Fengdong;Feng, Caihui;Li, Chao;Zhu, Linghui;Zhou, Jingran;Ruan, Shengping;Chen, Weiyou;
10:208:7 Photoemission studies of the surface electronic properties of L-CVD SnO2 ultra thin films
DOI:10.1016/j.apsusc.2012.03.174 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Kwoka, M.;Ottaviano, L.;Szuber, J.;
10:208:8 Resistance Fluctuations in GaAs Nanowire Grids
DOI:10.1155/2014/428390 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Marasovic, Ivan;Milanovic, Zeljka;Betti, Tihomir;
10:209:1 High Density Unaggregated Au Nanoparticles on ZnO Nanorod Arrays Function as Efficient and Recyclable Photocatalysts for Environmental Purification
DOI:10.1002/smll.201300424 JN:SMALL PY:2013
TC:23 AU: Yang, Tung-Han;Huang, Li-De;Harn, Yeu-Wei;Lin, Chun-Cheng;Chang, Jan-Kai;Wu, Chih-I;Wu, Jenn-Ming;
10:209:2 Gold nanoparticles modified ZnO nanorods with improved photocatalytic activity
DOI:10.1016/j.jcis.2011.07.005 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:39 AU: Sun, Lanlan;Zhao, Dongxu;Song, Zhiming;Shan, Chongxin;Zhang, Zhenzhong;Li, Binghui;Shen, Dezhen;
10:209:3 Photo-directed growth of Au nanowires on ZnO arrays for enhancing photoelectrochemical performances
DOI:10.1039/c4ta02960g JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:3 AU: Wang, Teng;Jin, Bingjun;Jiao, Zhengbo;Lu, Gongxuan;Ye, Jinhua;Bi, Yingpu;
10:209:4 Modification of ZnO nanorods through Au nanoparticles surface coating for dye-sensitized solar cells applications
DOI:10.1016/j.matlet.2010.03.022 JN:MATERIALS LETTERS PY:2010
TC:38 AU: Peh, C. K. N.;Ke, L.;Ho, G. W.;
10:209:5 A facile, coverage controlled deposition of Au nanoparticles on ZnO nanorods by sonochemical reaction for enhancement of photocatalytic activity
DOI:10.1007/s11051-012-1033-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:5 AU: Kim, Jaehyun;Yong, Kijung;
10:209:6 Activity of Au/ZnO catalysts prepared by photodeposition for the preferential CO oxidation in a H-2-rich gas
DOI:10.1016/j.ijhydene.2014.02.038 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:5 AU: Dulnee, S.;Luengnaruemitchai, A.;Wanchanthuek, R.;
10:209:7 Synthesis of ZnO and Au tethered ZnO pyramid-like microflower for photocatalytic degradation of orange II
DOI:10.1016/j.mseb.2011.12.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:10 AU: Chen, Pei-Kuan;Lee, Gang-Juan;Anandan, Sambandam;Wu, Jerry J.;
10:209:8 The catalytic performance of Au/La-CeOx catalyst for PROX reaction in H-2 rich stream
DOI:10.1016/j.ijhydene.2014.08.048 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:1 AU: Luengnaruemitchai, Apanee;Chawla, Sahli;Wanchanthuek, Ratchaneekorn;
10:209:9 Enhancement of current injection in inverted organic light emitting diodes with thermal annealing
DOI:10.1063/1.3512911 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Wang, Po-Sheng;Wu, I. -Wen;Wu, Chih-I.;
10:209:10 The sensitivity and dynamic response of field ionization gas sensor based on ZnO nanorods
DOI:10.1007/s11051-011-0500-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:2 AU: Min, Jiahua;Liang, Xiaoyan;Wang, Bin;Wang, Linjun;Zhao, Yue;Shi, Weimin;Xia, Yiben;
10:210:1 Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering
DOI:10.1016/j.apsusc.2011.10.076 JN:APPLIED SURFACE SCIENCE PY:2012
TC:25 AU: Cui, Lin;Zhang, Hua-Yu;Wang, Gui-Gen;Yang, Fang-Xu;Kuang, Xu-Ping;Sun, Rui;Han, Jie-Cai;
10:210:2 Structural and optical properties of ZnO thin films prepared by sol-gel method with different thickness
DOI:10.1016/j.apsusc.2010.11.170 JN:APPLIED SURFACE SCIENCE PY:2011
TC:54 AU: Xu, Linhua;Li, Xiangyin;Chen, Yulin;Xu, Fei;
10:210:3 Effect of film thickness and annealing temperature on the structural and optical properties of ZnO thin films deposited on sapphire (0001) substrates by sol-gel
DOI:10.1016/j.ceramint.2012.10.014 JN:CERAMICS INTERNATIONAL PY:2013
TC:12 AU: Cui, Lin;Wang, Gui-Gen;Zhang, Hua-Yu;Sun, Rui;Kuang, Xu-Ping;Han, Jie-Cai;
10:210:4 Influence of annealing on polymeric precursor derived ZnO thin films on sapphire
DOI:10.1016/j.tsf.2013.07.085 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Choppali, Uma;Kougianos, Elias;Mohanty, Saraju P.;Gorman, Brian P.;
10:210:5 Photovoltaic behavior and work function of zinc oxides as solar cells
DOI:10.1016/j.apsusc.2010.07.031 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Tan, Xun-qiong;Wu, Zheng-qiu;Zhi, Wen;
10:210:6 Morphology transition of ZnO films with DMZn flow rate in MOCVD process
DOI:10.1016/j.apsusc.2010.05.070 JN:APPLIED SURFACE SCIENCE PY:2010
TC:6 AU: Liang, J. H.;Lai, H. Y.;Chen, Y. J.;
10:210:7 Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates
DOI:10.1016/j.apsusc.2011.01.037 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Zhao, Ziwen;Hu, Lizhong;Zhang, Heqiu;Sun, Jingchang;Bian, Jiming;Zhao, Jianze;
10:210:8 Structural and electrical properties of nitrogen-doped ZnO thin films
DOI:10.1016/j.apsusc.2014.02.118 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Tuzemen, Ebru Senadim;Kara, Kamuran;Elagoz, Sezai;Takci, Deniz Kadir;Altuntas, Ismail;Esen, Ramazan;
10:210:9 Heteroepitaxial ZnO/sapphire (0001) structure prepared by sol-gel process
DOI:10.1016/j.ceramint.2010.06.007 JN:CERAMICS INTERNATIONAL PY:2010
TC:7 AU: Hwang, Kyu-Seog;Kang, Bo-An;Kim, Yu-Sang;Hwangbo, Seung;Kim, Jin-Tae;
10:210:10 Low-frequency magnetic susceptibility and photoelectric properties of glass/Fe40Pd40B20/ZnO and glass/ZnO/Fe40Pd40B20
DOI:10.1016/j.jallcom.2014.02.058 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Chen, Yuan-Tsung;Jheng, Hao-Yi;Huang, Yan-Bo;
10:210:11 The study of rapid thermal annealing on arsenic-doped ZnO for the p-type ZnO formation
DOI:10.1016/j.jcrysgro.2012.03.060 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Chen, Yijia J.;Jen, Hsin-Wei;Wong, Ming-Show;Ho, Ching-Hwa;Liang, Jia-Hao;Liu, Jun-Ting;Pang, Ju-Hua;
10:210:12 Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method
DOI:10.1016/j.apsusc.2010.11.003 JN:APPLIED SURFACE SCIENCE PY:2011
TC:17 AU: Phan, Duy-Thach;Chung, Gwiy-Sang;
10:210:13 Epitaxial growth of vertically aligned highly conducting ZnO nanowires by modified aqueous chemical growth process
DOI:10.1016/j.ceramint.2014.03.154 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Amiruddin, R.;Kumar, M. C. Santhosh;
10:210:14 Effect of ZnO sacrificial layer thickness on the structure and optical properties of GaN nanoparticles prepared by RF magnetron sputtering
DOI:10.1007/s00339-012-7506-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:0 AU: Cui, Lin;Zhang, Hua-Yu;Wang, Gui-Gen;Sun, Rui;Han, Jie-Cai;Gao, Shang;
10:210:15 Photovoltaic behavior and work function of zinc oxides as solar cells (vol 257, pg 1141, 2010)
DOI:10.1016/j.apsusc.2011.10.105 JN:APPLIED SURFACE SCIENCE PY:2011
TC:0 AU: Tan, Xun-qiong;Wu, Zheng-qiu;Zhi, Wen;
10:210:16 Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities
DOI:10.1016/j.jcrysgro.2011.03.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Dangbegnon, J. K.;Talla, K.;Vines, L.;Botha, J. R.;
10:211:1 Enhanced electromechanical response of Fe-doped ZnO films by modulating the chemical state and ionic size of the Fe dopant
DOI:10.1103/PhysRevB.82.014116 JN:PHYSICAL REVIEW B PY:2010
TC:22 AU: Luo, J. T.;Yang, Y. C.;Zhu, X. Y.;Chen, G.;Zeng, F.;Pan, F.;
10:211:2 Correlation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin films
DOI:10.1063/1.4804613 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Liu, Hongyan;Zeng, Fei;Lin, Yisong;Wang, Guangyue;Pan, Feng;
10:211:3 Interplay between chemical state, electric properties, and ferromagnetism in Fe-doped ZnO films
DOI:10.1063/1.4794882 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:9 AU: Chen, G.;Peng, J. J.;Song, C.;Zeng, F.;Pan, F.;
10:211:4 Synthesis of Fe-Doped ZnO Nanorods by Rapid Mixing Hydrothermal Method and Its Application for High Performance UV Photodetector
DOI:10.1155/2014/524530 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Chey, Chan Oeurn;Masood, Ansar;Riazanova, A.;Liu, Xianjie;Rao, K. V.;Nur, Omer;Willander, Magnus;
10:211:5 Cost-effective and high frequency surface acoustic wave filters on ZnO:Fe/Si for low-loss and wideband application
DOI:10.1063/1.4764540 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Luo, J. T.;Pan, F.;Fan, P.;Zeng, F.;Zhang, D. P.;Zheng, Z. H.;Liang, G. X.;
10:211:6 Thermoelectric properties optimization of Al-doped ZnO thin films prepared by reactive sputtering Zn-Al alloy target
DOI:10.1016/j.apsusc.2013.07.070 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Fan, Ping;Li, Ying-zhen;Zheng, Zhuang-hao;Lin, Qing-yun;Luo, Jing-ting;Liang, Guang-xing;Zhang, Miao-qin;Chen, Min-cong;
10:211:7 Filtering performance improvement in V-doped ZnO/diamond surface acoustic wave filters
DOI:10.1016/j.apsusc.2009.11.077 JN:APPLIED SURFACE SCIENCE PY:2010
TC:17 AU: Luo, J. T.;Zeng, F.;Pan, F.;Li, H. F.;Niu, J. B.;Jia, R.;Liu, M.;
10:211:8 Thermoelectric Property of Polycrystalline Aluminum-Doped Zinc Oxide Enhanced by Micropore Foaming
DOI:10.1111/j.1551-2916.2011.04837.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:3 AU: Teranishi, Takashi;Mori, Yosuke;Hayashi, Hidetaka;Kishimoto, Akira;
10:211:9 Influence of preparation condition and doping concentration of Fe-doped ZnO thin films: Oxygen-vacancy related room temperature ferromagnetism
DOI:10.1016/j.tsf.2011.04.233 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Zhang, Wei-Guang;Lu, Bin;Zhang, Li-Qiang;Lu, Jian-Guo;Fang, Min;Wu, Ke-Wei;Zhao, Bing-Hui;Ye, Zhi-Zhen;
10:211:10 Mg doping in wurtzite ZnO coupled with native point defects: A mechanism for enhanced n-type conductivity and photoluminescence
DOI:10.1063/1.4738990 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Dutta, Rajkrishna;Mandal, Nibir;
10:212:1 Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates
DOI:10.1016/j.jallcom.2012.11.085 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Naderi, N.;Hashim, M. R.;
10:212:2 Deep ultraviolet detecting property of AlxZn1-xO alloy thin film as photocathode layer
DOI:10.1016/j.jallcom.2013.02.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: Deng, Xue-Ran;Deng, Hong;Wei, Min;
10:212:3 Substrate temperature effect on the SiC passivation layer synthesized by an RF magnetron sputtering method
DOI:10.1016/j.tsf.2011.04.052 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Seo, Jae Keun;Joung, Yeun-Ho;Park, Young;Choi, Won Seok;
10:212:4 Crystalline silicon interface passivation improvement with a-Si1-xCx:H and its application in hetero-junction solar cells with intrinsic layer
DOI:10.1063/1.4770308 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Chang, Teng-Hsiang;Chu, Yen-Ho;Lee, Chien-Chieh;Chang, Jenq-Yang;
10:212:5 A combination of electroless and electrochemical etching methods for enhancing the uniformity of porous silicon substrate for light detection application
DOI:10.1016/j.apsusc.2012.03.056 JN:APPLIED SURFACE SCIENCE PY:2012
TC:15 AU: Naderi, N.;Hashim, M. R.;
10:212:6 Effect of different current densities on optical properties of porous silicon carbide using photo-electrochemical etching
DOI:10.1016/j.matlet.2012.08.014 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Naderi, N.;Hashim, M. R.;
10:212:7 The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method
DOI:10.1016/j.jcrysgro.2011.01.093 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Seo, Jae Keun;Ko, Ki-han;Choi, Won Seok;Park, Mungi;Lee, Jong Hwan;Yi, Jun-Sin;
10:212:8 Enhanced optical and electrical stability of thermally carbonized porous silicon
DOI:10.1016/j.mssp.2012.09.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Naderi, N.;Hashim, M. R.;Rouhi, J.;Mahmodi, H.;
10:212:9 Enhancing photoresponse time of low cost Pd/ZnO nanorods prepared by thermal evaporation techniques for UV detection
DOI:10.1016/j.apsusc.2011.08.093 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Abdulgafour, H. I.;Hassan, Z.;Yam, F. K.;AL-Heuseen, K.;Yusof, Y.;
10:212:10 Visible-blind ultraviolet photodetectors on porous silicon carbide substrates
DOI:10.1016/j.materresbull.2013.02.078 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Naderi, N.;Hashim, M. R.;
10:212:11 Front and backside-illuminated GaN/Si based metal-semiconductor-metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies
DOI:10.1016/j.tsf.2011.09.045 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Mueller, Alexandru;Konstantinidis, George;Androulidaki, Maria;Dinescu, Adrian;Stefanescu, Alexandra;Cismaru, Alina;Neculoiu, Dan;Pavelescu, Emil;Stavrinidis, Antonis;
10:212:12 DFT Study of the Electronic Structure of Cubic-SiC Nanopores with a C-Terminated Surface
DOI:10.1155/2014/471351 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Calvino, M.;Trejo, A.;Iturrios, M. I.;Crisostomo, M. C.;Carvajal, Eliel;Cruz-Irisson, M.;
10:212:13 Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N-2, O-2 plasmas
DOI:10.1116/1.3655561 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:1 AU: Efremov, Alexander;Kang, Sungchil;Kwon, Kwang-Ho;Choi, Won Seok;
10:212:14 Effect of substrate temperature on the properties of transparent conductive ZnO:Al thin films prepared by RF sputtering
DOI:10.1116/1.3610175 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:1 AU: Deng, Xue-Ran;Deng, Hong;Wei, Min;Chen, Jin-Ju;Chen, Han;
10:212:15 Performance improvement of GaN-based ultraviolet metal-semiconductor-metal photodetectors using chlorination surface treatment
DOI:10.1116/1.4711215 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:1 AU: Lee, Hsin-Ying;Lu, De-En;Lee, Ching-Ting;
10:212:16 Investigation of hydrogenated amorphous silicon as passivation layer by high density plasma
DOI:10.1016/j.tsf.2014.03.064 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Chu, Yen-Ho;Lee, Chien-Chieh;Chang, Teng-Hsiang;Chang, Shan-Yuan;Chang, Jenq-Yang;Li, Tomi;Chen, I-Chen;
10:213:1 Nitrogen and copper doping in MgxZn1-xO films and their impact on p-type conductivity
DOI:10.1063/1.3603038 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Mohanta, S. K.;Nakamura, A.;Temmyo, J.;
10:213:2 Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode
DOI:10.1063/1.3598136 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Chu, Sheng;Zhao, Jianze;Zuo, Zheng;Kong, Jieying;Li, Lin;Liu, Jianlin;
10:213:3 Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol-gel technique
DOI:10.1016/j.jallcom.2012.09.011 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Xu, Linhua;Su, Jing;Chen, Yulin;Zheng, Gaige;Pei, Shixin;Sun, Tingting;Wang, Junfeng;Lai, Min;
10:213:4 Origin of the responsivity characteristics of Au/ZnO/MgZnO and Au/MgZnO/ZnO structured ultraviolet photodetectors
DOI:10.1063/1.4891963 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, Rusheng;Jiang, Dayong;Duan, Qian;Sun, Long;Tian, Chunguang;Liang, Qingcheng;Gao, Shang;Qin, Jieming;
10:213:5 Effect of Cu-doping on the microstructural and optical properties of Mg0.2Zn0.8O thin films prepared by sol-gel spin coating
DOI:10.1016/j.tsf.2013.03.069 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Moon, Jin Young;Kim, Hyunghoon;Lee, Ho Seong;
10:213:6 Microstructure evolution and photoluminescence in nanocrystalline MgxZn1-xO thin films
DOI:10.1088/0957-4484/22/42/425706 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Sahaym, U.;Norton, M. G.;Huso, J.;Morrison, J. L.;Che, H.;Bergman, L.;
10:213:7 Effects of Mg content and B doping on structural, electrical and optical properties of Zn1-xMgxO thin films prepared by MOCVD
DOI:10.1016/j.jcrysgro.2010.03.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Li, C.;Meng, F. Y.;Zhang, S.;Wang, J. Q.;
10:213:8 Synthesis and characterization of N, In co-doped MgZnO films using remote-plasma-enhanced metalorganic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2013.03.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Mohanta, S. K.;Nakamura, A.;Temmyo, J.;
10:213:9 Shallow Donor States Induced by In-Diffused Cu in ZnO: A Combined HREELS and Hybrid DFT Study
DOI:10.1103/PhysRevLett.106.066401 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:18 AU: Qiu, Hengshan;Gallino, Federico;Di Valentin, Cristiana;Wang, Yuemin;
10:213:10 Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors
DOI:10.1080/15421406.2013.853531 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2013
TC:1 AU: Kim, Jung-Hye;Kim, Joonwoo;Lee, Gwang Jun;Jeong, Jaewook;Choi, Byeongdae;
10:213:11 N-doped MgZnO alloy thin film prepared by sol-gel method
DOI:10.1016/j.matlet.2011.03.090 JN:MATERIALS LETTERS PY:2011
TC:4 AU: Chongsri, K.;Boonruang, S.;Techitdheera, W.;Pecharapa, W.;
10:213:12 Phase evolution, bandgap engineering and p-type conduction in undoped/N-doped BexZn1-xO alloy epitaxial films
DOI:10.1016/j.jallcom.2014.07.134 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Zhu, Yuan;Chen, Mingming;Su, Longxing;Su, Yuquan;Ji, Xu;Gui, Xuchun;Tang, Zikang;
10:213:13 Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors
DOI:10.1016/j.mseb.2010.06.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:6 AU: Jiang, Dayong;Zhang, Xiyan;Liu, Quansheng;Bai, Zhaohui;Lu, Liping;Wang, Xiaochun;Mi, Xiaoyun;Wang, Nengli;Shen, Dezhen;
10:213:14 Structural and optical properties of ZnO nanorods grown on MgxZn1-xO buffer layers
DOI:10.1016/j.apsusc.2009.09.063 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Ji, Liang-Wen;Lin, Chih-Ming;Fang, Te-Hua;Chu, Tung-Te;Jiang, Huilin;Shi, Wei-Shun;Wu, Cheng-Zhi;Chang, Tian-Long;Meen, Teen-Hang;Zhong, Jingchang;
10:213:15 The substrate effect on the optical band gap of the Mg0.53Zn0.47O thin films
DOI:10.1016/j.matchemphys.2010.09.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:2 AU: Han, S.;Zhang, J. Y.;Zhang, Z. Z.;Zhao, Y. M.;Jiang, D. Y.;Ju, Z. G.;Shen, D. Z.;Zhao, D. X.;Yao, B.;
10:213:16 Effect of growth parameters on MgxZn1-xO films grown by metalorganic chemical vapour deposition
DOI:10.1016/j.jcrysgro.2010.08.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:1 AU: Talla, K.;Dangbegnon, J. K.;Wagener, M. C.;Weber, J.;Botha, J. R.;
10:213:17 Analysis of effective channel length variation for thin-film transistors with edge waviness in source/drain electrodes
DOI:10.1016/j.tsf.2010.03.158 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Jeong, Jaewook;Hong, Yongtaek;
10:214:1 Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation
DOI:10.1103/PhysRevB.81.125116 JN:PHYSICAL REVIEW B PY:2010
TC:31 AU: Medvedeva, Julia E.;Hettiarachchi, Chaminda L.;
10:214:2 Possible n-type carrier sources in In2O3(ZnO)(k)
DOI:10.1021/cm202020g JN:CHEMISTRY OF MATERIALS PY:2012
TC:11 AU: Peng, Haowei;Song, Jung-Hwan;Hopper, E. Mitchell;Zhu, Qimin;Mason, Thomas O.;Freeman, Arthur J.;
10:214:3 Carrier Generation in Multicomponent Wide-Bandgap Oxides: InGaZnO4
DOI:10.1021/ja311955g JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2013
TC:7 AU: Murat, Altynbek;Adler, Alexander U.;Mason, Thomas O.;Medvedeva, Julia E.;
10:214:4 Free energy of defect formation: Thermodynamics of anion Frenkel pairs in indium oxide
DOI:10.1103/PhysRevB.83.224105 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Walsh, Aron;Sokol, Alexey A.;Catlow, C. Richard A.;
10:214:5 Composition-dependent oxygen vacancy formation in multicomponent wide-band-gap oxides
DOI:10.1103/PhysRevB.86.085123 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Murat, Altynbek;Medvedeva, Julia E.;
10:214:6 Activation entropies for diffusion in cubic silicon carbide from first principles
DOI:10.1103/PhysRevB.82.134115 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Bedoya-Martinez, O. N.;Roma, Guido;
10:214:7 Electronic and thermoelectric analysis of phases in the In2O3(ZnO)(k) system
DOI:10.1063/1.3530733 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Hopper, E. Mitchell;Zhu, Qimin;Song, Jung-Hwan;Peng, Haowei;Freeman, Arthur J.;Mason, Thomas O.;
10:214:8 Defect mechanisms in the In2O3(ZnO)(k) system (k=3, 5, 7, 9)
DOI:10.1063/1.4764924 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Hopper, E. Mitchell;Peng, Haowei;Hawks, Steven A.;Freeman, Arthur J.;Mason, Thomas O.;
10:214:9 High-Temperature Thermoelectric Properties of Compounds in the System ZnxInyOx+1.5y
DOI:10.1007/s11664-012-2300-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Amani, Matin;Tougas, Ian M.;Gregory, Otto J.;Fralick, Gustave C.;
10:214:10 Electronic properties of layered multicomponent wide-band-gap oxides: A combinatorial approach
DOI:10.1103/PhysRevB.85.155101 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Murat, Altynbek;Medvedeva, Julia E.;
10:214:11 Photocatalytic H-2 Evolution from Water-Methanol System by Anisotropic InFeO3(ZnO)(m) Oxides without Cocatalyst in Visible Light
DOI:10.1021/am501976z JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Narendranath, Soumya B.;Yadav, Ashok Kumar;Bhattacharyya, Dibyendu;Jha, Shambu Nath;Devi, R. Nandini;
10:214:12 Donor-donor binding in In2O3: Engineering shallow donor levels
DOI:10.1063/1.3374644 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Tang, Li-Ming;Wang, Ling-Ling;Wang, Dan;Liu, Jian-Zhe;Chen, Ke-Qiu;
10:214:13 Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)(k) compounds
DOI:10.1016/j.apsusc.2012.10.143 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Hopper, E. Mitchell;Zhu, Qimin;Gassmann, Juergen;Klein, Andreas;Mason, Thomas O.;
10:214:14 Investigation of defects in In-Ga-Zn oxide thin film using electron spin resonance signals
DOI:10.1063/1.4873638 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Nonaka, Yusuke;Kurosawa, Yoichi;Komatsu, Yoshihiro;Ishihara, Noritaka;Oota, Masashi;Nakashima, Motoki;Hirohashi, Takuya;Takahashi, Masahiro;Yamazaki, Shunpei;Obonai, Toshimitsu;Hosaka, Yasuharu;Koezuka, Junichi;Yamauchi, Jun;
10:214:15 Defects annealing in 4H-SiC epitaxial layer probed by low temperature photoluminescence
DOI:10.1016/j.mssp.2012.07.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:0 AU: Litrico, G.;Zimbone, M.;Musumeci, P.;Calcagno, L.;
10:215:1 Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits
DOI:10.1002/adma.201001375 JN:ADVANCED MATERIALS PY:2010
TC:51 AU: Frenzel, Heiko;Lajn, Alexander;von Wenckstern, Holger;Lorenz, Michael;Schein, Friedrich;Zhang, Zhipeng;Grundmann, Marius;
10:215:2 Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
DOI:10.1063/1.4789000 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Lajn, Alexander;von Wenckstern, Holger;Grundmann, Marius;Wagner, Gerald;Barquinha, Pedro;Fortunato, Elvira;Martins, Rodrigo;
10:215:3 Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors
DOI:10.1063/1.4791673 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Zhang, Hongliang;Wan, Qing;Wan, Changjin;Wu, Guodong;Zhu, Liqiang;
10:215:4 Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors
DOI:10.1002/adma.201103087 JN:ADVANCED MATERIALS PY:2011
TC:19 AU: Lorenz, Michael;von Wenckstern, Holger;Grundmann, Marius;
10:215:5 Ultrathin gate-contacts for metal-semiconductor field-effect transistor devices: An alternative approach in transparent electronics
DOI:10.1063/1.3430988 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Frenzel, H.;Lajn, A.;von Wenckstern, H.;Grundmann, M.;
10:215:6 Design rules of (Mg,Zn)O-based thin-film transistors with high-kappa WO3 dielectric gates
DOI:10.1063/1.4764559 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Lorenz, M.;Reinhardt, A.;von Wenckstern, H.;Grundmann, M.;
10:215:7 Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
DOI:10.1063/1.3525932 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Lorenz, M.;Lajn, A.;Frenzel, H.;Wenckstern, H. V.;Grundmann, M.;Barquinha, P.;Martins, R.;Fortunato, E.;
10:215:8 High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology
DOI:10.1063/1.3339876 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Frenzel, H.;Schein, F.;Lajn, A.;von Wenckstern, H.;Grundmann, M.;
10:215:9 Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
DOI:10.1063/1.3569628 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Kluepfel, F. J.;Lajn, A.;Frenzel, H.;von Wenckstern, H.;Grundmann, M.;
10:215:10 Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO
DOI:10.1007/s11664-010-1395-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:6 AU: Lajn, A.;Schmidt, M.;von Wenckstern, H.;Grundmann, M.;
10:215:11 Comment on "Organometallic Complexes for Nonlinear Optics. 45. Dispersion of the Third-order Nonlinear Optical Properties of Triphenylamine-cored Alkynylruthenium Dendrimers" - Increasing the Nonlinear Optical Response by Two Orders of Magnitude
DOI:10.1002/adma.201003421 JN:ADVANCED MATERIALS PY:2011
TC:10 AU: Perez-Moreno, Javier;Kuzyk, Mark G.;
10:215:12 Dielectric Passivation of ZnO-Based Schottky Diodes
DOI:10.1007/s11664-009-0974-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:5 AU: von Wenckstern, H.;Mueller, S.;Biehne, G.;Hochmuth, H.;Lorenz, M.;Grundmann, M.;
10:215:13 Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO (vol 40, pg 473, 2011)
DOI:10.1007/s11664-011-1566-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:0 AU: Lajn, A.;Schmidt, M.;von Wenckstern, H.;Grundmann, M.;
10:215:14 Transparent magnetic oxide thin films of Fe3O4 on glass
DOI:10.1016/j.tsf.2010.12.003 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Baghaie Yazdi, M.;Goyallon, M. -L.;Bitsch, T.;Kastner, A.;Schlott, M.;Alff, L.;
10:216:1 Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films
DOI:10.1063/1.3447981 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:55 AU: Yamada, Takahiro;Makino, Hisao;Yamamoto, Naoki;Yamamoto, Tetsuya;
10:216:2 Mechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electron-cyclotron-resonance plasma on polyethylene naphtalate substrates
DOI:10.1116/1.4831979 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Akazawa, Housei;
10:216:3 Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress
DOI:10.1007/s13391-012-2006-1 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:9 AU: Lim, Young Soo;Seo, Seul Gi;Kim, Bo Bae;Choi, Hyoung-Seuk;Seo, Won-Seon;Cho, Yong Soo;Park, Hyung-Ho;
10:216:4 Structural, electrical and bending properties of transparent conductive Ga-doped ZnO films on polymer substrates
DOI:10.1016/j.tsf.2011.08.081 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Nagamoto, Koichi;Kato, Kunihisa;Naganawa, Satoshi;Kondo, Takeshi;Sato, Yasushi;Makino, Hisao;Yamamoto, Naoki;Yamamoto, Tetsuya;
10:216:5 Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiOx nano-films prepared by atmospheric pressure plasma deposition system
DOI:10.1016/j.tsf.2013.09.082 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Chang, Kow-Ming;Ho, Po-Ching;Ariyarit, Atthaporn;Yang, Kuo-Hui;Hsu, Jui-Mei;Wu, Chin-Jyi;Chang, Chia-Chiang;
10:216:6 Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells
DOI:10.1016/j.apsusc.2013.03.165 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Chang, Kow-Ming;Ho, Po-Ching;Yu, Shu-Hung;Hsu, Jui-Mei;Yang, Kuo-Hui;Wu, Chin-Jyi;Chang, Chia-Chiang;
10:216:7 Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet
DOI:10.1016/j.tsf.2011.01.156 JN:THIN SOLID FILMS PY:2011
TC:16 AU: Chang, Kow-Ming;Huang, Sung-Hung;Wu, Chin-Jyi;Lin, Wei-Li;Chen, Wei-Chiang;Chi, Chia-Wei;Lin, Je-Wei;Chang, Chia-Chiang;
10:216:8 Study of optical and electrical properties of ZnO/Cu/ZnO multilayers deposited on flexible substrate
DOI:10.1016/j.tsf.2012.10.064 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Ionescu, Mihnea Ioan;Bensebaa, Farid;Luan, Ben Li;
10:216:9 Plasma-aided hydrogenation and Al-doping: Increasing the conductivity and optical transparency of ZnO transparent conducting oxide
DOI:10.1016/j.apsusc.2011.06.121 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Ong, T.;Xu, L.;van der Laan, T. A.;Xu, S.;Ostrikov, K.;
10:216:10 Frictional behavior of atmospheric plasma jet deposited carbon-ZnO composite coatings
DOI:10.1016/j.compscitech.2013.01.005 JN:COMPOSITES SCIENCE AND TECHNOLOGY PY:2013
TC:4 AU: Penkov, Oleksiy V.;Lee, Doo-Hee;Kim, Haejin;Kim, Dae-Eun;
10:216:11 Optical and Electrical Characterization of AZO Films Grown on c-Plane Sapphire Substrates by Atomic Layer Deposition
DOI:10.1007/s13391-013-3042-1 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Choi, Nak-Jung;Kim, Ki-Wook;Son, Hyo-Soo;Lee, Sung-Nam;
10:216:12 Deposition of the ZnO transparent electrodes at atmospheric pressure using a DC Arc Plasmatron
DOI:10.1016/j.tsf.2010.02.072 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Penkov, Oleksiy V.;Lee, Heon-Ju;Plaksin, Vadim Y.;Mansur, Rakib;Kim, Ji Hun;
10:216:13 Effect of low energy ion bombardment on structure and photoluminescence characterization of Al-doped ZnO thin films
DOI:10.1016/j.tsf.2012.09.055 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Jin, Chenggang;Yu, Tao;Wu, Zaofeng;Wu, Xuemei;Zhuge, Lanjian;
10:216:14 Effects of UV assistance on the properties of al-doped ZnO thin films deposited by sol-gel method
DOI:10.1007/s13391-013-6009-3 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:4 AU: Tseng, Yung-Kuan;Pai, Feng-Ming;Chen, Yan-Cheng;Wu, Chao-Hsien;
10:216:15 Improved damp heat stability of Ga-Doped ZnO thin film by pretreatment of the polyethylene terephthalate substrate
DOI:10.1007/s13391-013-2208-1 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Kim, B. B.;Seo, S. G.;Lim, Y. S.;Choi, H. -S.;Seo, W. -S.;Park, H. -H.;
10:217:1 Controlled hybridization of Sn-SnO2 nanoparticles via simple-programmed microfluidic processes for tunable ultraviolet and blue emissions
DOI:10.1039/c4tc00842a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:4 AU: Li, Shuai;Zhong, Xiaodi;Song, Yujun;Shen, Xiaomiao;Sun, Jiaguang;Song, Yuanjun;Wang, Rongming;Zhu, Min;Zhong, Haizheng;Zheng, Aiguo;
10:217:2 Growth of tin oxide nanorods induced by nanocube-oriented coalescence mechanism
DOI:10.1063/1.3572021 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Liu, L. Z.;Li, X. X.;Wu, X. L.;Chen, X. T.;Chu, Paul K.;
10:217:3 Mechanisms in photoluminescence enhancement of ZnO nanorod arrays by the localized surface plasmons of Ag nanoparticles
DOI:10.1016/j.apsusc.2012.05.046 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Bian, Jun-Cao;Yang, Fei;Li, Zhe;Zeng, Jie-Liang;Zhang, Xi-Wen;Chen, Zhong-Dong;Tan, Jeannie Ziang Yie;Peng, Rui-Qun;He, Hai-Yan;Wang, Juan;
10:217:4 Oxygen-vacancy and depth-dependent violet double-peak photoluminescence from ultrathin cuboid SnO2 nanocrystals
DOI:10.1063/1.3696044 JN:APPLIED PHYSICS LETTERS PY:2012
TC:11 AU: Liu, L. Z.;Wu, X. L.;Xu, J. Q.;Li, T. H.;Shen, J. C.;Chu, Paul K.;
10:217:5 Electrodeposition of silver nanoparticle arrays on ITO coated glass and their application as reproducible surface-enhanced Raman scattering substrate
DOI:10.1016/j.apsusc.2011.10.055 JN:APPLIED SURFACE SCIENCE PY:2011
TC:18 AU: Bian, Jun-Cao;Li, Zhe;Chen, Zhong-Dong;He, Hai-Yan;Zhang, Xi-Wen;Li, Xiang;Han, Gao-Rong;
10:217:6 Optical identification of oxygen vacancy types in SnO2 nanocrystals
DOI:10.1063/1.4789538 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Liu, L. Z.;Xu, J. Q.;Wu, X. L.;Li, T. H.;Shen, J. C.;Chu, Paul K.;
10:217:7 Aqueous phase Ag nanoparticles with controlled shapes fabricated by a modified nanosphere lithography and their optical properties
DOI:10.1016/j.apsusc.2010.03.102 JN:APPLIED SURFACE SCIENCE PY:2010
TC:18 AU: Song, Yujun;Elsayed-Ali, Hani E.;
10:217:8 Microfluidic synthesis of Fe nanoparticles
DOI:10.1016/j.matlet.2010.05.025 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Song, Yujun;Jin, Pengyun;Zhang, Tao;
10:217:9 Electrodeposition of hierarchical Ag nanostructures on ITO glass for reproducible and sensitive SERS application
DOI:10.1016/j.apsusc.2012.03.093 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Bian, Jun-Cao;Chen, Zhong-Dong;Li, Zhe;Yang, Fei;He, Hai-Yan;Wang, Juan;Tan, Jeannie Ziang Yie;Zeng, Jie-Liang;Peng, Rui-Qun;Zhang, Xi-Wen;Han, Gao-Rong;
10:217:10 Influence of confinement regimes on magnetic property of pristine SnO2 quantum dots
DOI:10.1039/c2jm35274e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:13 AU: Dutta, Dipa;Bahadur, D.;
10:217:11 Synthesis of boron nitride nanotubes by an oxide-assisted chemical method
DOI:10.1007/s11051-010-0012-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:13 AU: Song, Yujun;Sun, Qiangqiang;Zhang, Tao;Jin, Pengyun;Han, Li;
10:217:12 N-doped SnO2 nanocrystals with green emission dependent upon mutual effects of nitrogen dopant and oxygen vacancy
DOI:10.1016/j.actamat.2013.08.040 JN:ACTA MATERIALIA PY:2013
TC:1 AU: Zhou, G. X.;Xiong, S. J.;Wu, X. L.;Liu, L. Z.;Li, T. H.;Chu, Paul K.;
10:217:13 Influence of in-plane and bridging oxygen vacancies of SnO2 nanostructures on CH4 sensing at low operating temperatures
DOI:10.1063/1.4904457 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bonu, Venkataramana;Das, A.;Prasad, Arun K.;Krishna, Nanda Gopala;Dhara, Sandip;Tyagi, A. K.;
10:217:14 Continuous-flow biosynthesis of Au-Ag bimetallic nanoparticles in a microreactor
DOI:10.1007/s11051-014-2698-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:1 AU: Liu, Hongyu;Huang, Jiale;Sun, Daohua;Odoom-Wubah, Tareque;Li, Jun;Li, Qingbiao;
10:217:15 Synthesis of nanostructured SnO and SnO2 by high-energy milling of Sn powder with stearic acid
DOI:10.1557/jmr.2013.220 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:1 AU: Manzato, Lizandro;Triches, Daniela Menegon;de Souza, Sergio Michielon;de Oliveira, Marcelo Falcao;
10:218:1 Effect of precursor concentration on structural, morphological and opto-electric properties of ZnO thin films prepared by spray pyrolysis
DOI:10.1016/j.ceramint.2014.01.048 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Baneto, Mazabalo;Enesca, Alexandru;Lare, Yendoube;Jondo, Koffi;Napo, Kossi;Duta, Anca;
10:218:2 Comparison of structural, optical properties and photocatalytic activity of ZnO with different morphologies: Effect of synthesis methods and reaction media
DOI:10.1016/j.matchemphys.2011.04.012 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:27 AU: Rezapour, Mehdi;Talebian, Nasrin;
10:218:3 Hydrothermal synthesis of nanostructured zinc oxide and study of their optical properties
DOI:10.1016/j.materresbull.2011.12.027 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:13 AU: Moulahi, A.;Sediri, F.;Gharbi, N.;
10:218:4 Effect of heterojunction on photocatalytic properties of multilayered ZnO-based thin films
DOI:10.1016/j.ceramint.2012.02.042 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Talebian, Nasrin;Nilforoushan, Mohammad Reza;Salehi, Zahra;
10:218:5 Microstructural characterization, optical and photocatalytic properties of bilayered CuO and ZnO based thin films
DOI:10.1016/j.jallcom.2014.01.149 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Saenz-Trevizo, A.;Amezaga-Madrid, P.;Piza-Ruiz, P.;Solis-Canto, O.;Ornelas-Gutierrez, C.;Perez-Garcia, S.;Miki-Yoshida, M.;
10:218:6 Effect of substrate morphology on the nucleation and growth of ZnO nanorods prepared by spray pyrolysis
DOI:10.1016/j.tsf.2011.11.068 JN:THIN SOLID FILMS PY:2012
TC:12 AU: Dedova, T.;Acik, I. Oja;Krunks, M.;Mikli, V.;Volobujeva, O.;Mere, A.;
10:218:7 Synthesis, microstructural characterization and optical properties of undoped, V and Sc doped ZnO thin films
DOI:10.1016/j.jallcom.2011.01.044 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Amezaga-Madrid, P.;Antunez-Flores, W.;Ledezma-Sillas, J. E.;Murillo-Ramirez, J. G.;Solis-Canto, O.;Vega-Becerra, O. E.;Martinez-Sanchez, R.;Miki-Yoshida, M.;
10:218:8 Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition
DOI:10.1016/j.matchar.2014.11.005 JN:MATERIALS CHARACTERIZATION PY:2014
TC:1 AU: Saenz-Trevizo, A.;Amezaga-Madrid, P.;Fuentes-Cobas, L.;Piza-Ruiz, P.;Antunez-Flores, W.;Ornelas-Gutierrez, C.;Perez-Garcia, S. A.;Miki-Yoshida, M.;
10:218:9 Al-doping effects on structure and optical properties of ZnO nanostructures
DOI:10.1016/j.matlet.2013.11.126 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Li, Yan;Meng, Jian;
10:218:10 Facile synthesis of pompon-like ZnO-Ag nanocomposites and their enhanced photocatalytic performance
DOI:10.1016/j.materresbull.2013.06.051 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:7 AU: Cheng, Yang;An, Liang;Lan, Jing;Gao, Fang;Tan, Ruiqin;Li, Xiao-min;Wang, Guang-hui;
10:218:11 Optical band gap modulation by Mg-doping in In2O3(ZnO)(3) ceramics
DOI:10.1016/j.ceramint.2012.05.058 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Lee, Hwa-Jong;Lee, Jung-A;Lee, Joon-Hyung;Heo, Young-Woo;Kim, Jeong-Joo;Park, Seong-Kee;Lim, Jungshik;
10:218:12 New methods for determining the band gap behavior of ZnO
DOI:10.1016/j.optmat.2011.12.019 JN:OPTICAL MATERIALS PY:2012
TC:6 AU: Li, Feng;Liu, Changshi;Ma, Zhongquan;Zhao, Lei;
10:218:13 The influence of organic additives on the morphologic and crystalline properties of SnO2 obtained by spray pyrolysis deposition
DOI:10.1016/j.tsf.2010.12.199 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Enesca, Alexandru;Duta, Anca;
10:218:14 The influence of the precursor concentration on the properties of SnO2 thin films
DOI:10.1016/j.tsf.2010.07.007 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Enesca, Alexandru;Duta, Anca;
10:219:1 Magnetism and electronic structure in Zn and Ti doped CoO: A first-principles study
DOI:10.1016/j.commatsci.2014.06.016 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:0 AU: Yin, M. Y.;Wang, X. C.;Mi, W. B.;Ding, Y. H.;Chen, G. F.;Yang, B. H.;
10:219:2 Role of oxygen concentration on ferromagnetism and electronic transport properties of Co0.53Ti0.47O delta nanocomposite films
DOI:10.1016/j.jallcom.2013.12.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Wang, X. C.;Zhou, J.;Liu, R. X.;Bai, Y. T.;Yin, M. Y.;Chen, X. M.;Yang, B. H.;
10:219:3 Investigation of structure and magnetoresistance in Co/ZnO films
DOI:10.1063/1.3511752 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Quan, Zhi-Yong;Xu, Xiao-Hong;Li, Xiao-Li;Feng, Q.;Gehring, G. A.;
10:219:4 Structural and magnetotransport properties in Co/nonmagnetic films
DOI:10.1016/j.matlet.2011.06.027 JN:MATERIALS LETTERS PY:2011
TC:7 AU: Quan, Zhiyong;Liu, Wei;Li, Xiaoli;Xu, Xiaohong;Addison, K.;Score, D. S.;Gehring, G. A.;
10:219:5 Tunneling magnetoresistance in epitaxial discontinuous Fe/MgO multilayers
DOI:10.1063/1.3569149 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Garcia-Garcia, A.;Pardo, J. A.;Strichovanec, P.;Magen, C.;Vovk, A.;De Teresa, J. M.;Kakazei, G. N.;Pogorelov, Y. G.;Morellon, L.;Algarabel, P. A.;Ibarra, M. R.;
10:219:6 Tunneling magnetoresistance in Fe/MgO granular multilayers
DOI:10.1063/1.3298504 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Garcia-Garcia, A.;Vovk, A.;Pardo, J. A.;Strichovanec, P.;Algarabel, P. A.;Magen, C.;De Teresa, J. M.;Morellon, L.;Ibarra, M. R.;
10:219:7 Structural and magnetotransport properties of ultrathin Co/ZnO and Co/ZnAlO films
DOI:10.1063/1.4883535 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Quan, Zhi-Yong;Zhang, Xian-Peng;Liu, Wei;Albargi, H. B.;Gehring, G. A.;Xu, Xiao-Hong;
10:219:8 Negative magnetoresistance in reactive sputtered non-uniform amorphous FexTi1-xO delta films
DOI:10.1016/j.materresbull.2013.05.033 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Wang, X. C.;Bai, Y. T.;Mi, W. B.;
10:219:9 Enhanced Room Temperature Magnetoresistance and Spin Injection from Metallic Cobalt in Co/ZnO and Co/ZnAlO Films
DOI:10.1021/am303276b JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Quan, Zhiyong;Zhang, Xianpeng;Liu, Wei;Li, Xiaoli;Addison, Kiri;Gehring, Gillian A.;Xu, Xiaohong;
10:219:10 Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors
DOI:10.1063/1.3305457 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Tian, Y. F.;Yan, Shi-shen;Zhao, M. W.;Dai, Y. Y.;Zhang, Y. P.;Qiao, R. M.;Hu, S. J.;Chen, Y. X.;Liu, G. L.;Mei, L. M.;Qiang, Y.;Jiao, J.;
10:219:11 Magnetoresistance and electron-hole exchange interaction in (Co1-xInx)(2)O3-v concentrated ferromagnetic semiconductors
DOI:10.1063/1.4831689 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Xu, T. S.;Qiao, R. M.;Tian, Y. F.;Yan, S. S.;Zhang, K.;Cao, Y. L.;Kang, S. S.;Chen, Y. X.;Liu, G. L.;Mei, L. M.;
10:219:12 Magnetic field strength and orientation effects on Co-Fe discontinuous multilayers close to percolation
DOI:10.1103/PhysRevB.82.144432 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Silva, H. G.;Pereira, A. M.;Teixeira, J. M.;Moreira, J. M.;Kakazei, G. N.;Araujo, J. P.;Pogorelov, Yu. G.;Sousa, J. B.;Braga, M. E.;Raquet, B.;Rakoto, H.;Gatel, C.;Snoeck, E.;Cardoso, S.;Freitas, P. P.;
10:219:13 Combinatorial pulsed laser deposition of Fe/MgO granular multilayers
DOI:10.1007/s00339-012-6808-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:1 AU: Garcia-Garcia, A.;Pardo, J. A.;Navarro, E.;Strichovanec, P.;Vovk, A.;Morellon, L.;Algarabel, P. A.;Ibarra, M. R.;
10:219:14 A first-principles prediction on the magnetism in CoO with Co and O Vacancies
DOI:10.1016/j.jallcom.2014.05.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Yin, M. Y.;Wang, X. C.;Mi, W. B.;Chen, G. F.;Yang, B. H.;
10:219:15 Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam pulsed laser deposition
DOI:10.1063/1.3277023 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Jesche, A.;Gorbunoff, A.;Mensch, A.;Stoecker, H.;Levin, A. A.;Meyer, D. C.;
10:219:16 In-situ electrical resistance measurement for determining minimum continuous thickness of Sn films by DC magnetron sputtering
DOI:10.1016/j.matlet.2012.01.020 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Kwon, Se-Hun;Kwon, Na-Hyun;Song, Pung-Keun;Hui, Kwun Nam;Hui, Kwan-San;Cho, Young-Rae;
10:219:17 Imprint Behavior of Piezoelectric PZT Thin Films Deposited onto Cu-Coated Polymer Substrates
DOI:10.1080/00150193.2011.594754 JN:FERROELECTRICS PY:2011
TC:0 AU: Suchaneck, G.;Hubicka, Z.;Cada, M.;Kiselev, D. A.;Bdikin, I.;Levin, A. A.;Jastrabik, L.;Kholkin, A. L.;Gerlach, G.;Dejneka, A.;
10:220:1 Effect of Zn/Sn ratio on structure and properties of ZnO-SnO2 nanocomposite films
DOI:10.1016/j.jallcom.2014.05.124 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Li, Jian-Chang;Hou, Xue-Yan;Cao, Qing;
10:220:2 Enhanced antibacterial performance of hybrid semiconductor nanomaterials: ZnO/SnO2 nanocomposite thin films
DOI:10.1016/j.apsusc.2011.08.070 JN:APPLIED SURFACE SCIENCE PY:2011
TC:29 AU: Talebian, Nasrin;Nilforoushan, Mohammad Reza;Zargar, Elahe Badri;
10:220:3 Pulse electrodeposition of ZnO/SnO2 composite films: Growth mechanism, structural and optical studies
DOI:10.1016/j.jallcom.2012.11.177 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Chen, Zeng;Li, Shengjun;Zhang, Weifeng;
10:220:4 Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition
DOI:10.1063/1.4811187 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Guo, Hangwen;Sun, Dali;Wang, Wenbin;Gai, Zheng;Kravchenko, Ivan;Shao, Jian;Jiang, Lu;Ward, Thomas Z.;Snijders, Paul C.;Yin, Lifeng;Shen, Jian;Xu, Xiaoshan;
10:220:5 Characterization of ZnO-SnO2 thin film composites prepared by pulsed laser deposition
DOI:10.1016/j.apsusc.2011.07.049 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Sinha, S. K.;Rakshit, T.;Ray, S. K.;Manna, I.;
10:220:6 Influence of deposition temperature on structure and morphology of nanostructured SnO2 films synthesized by pulsed laser deposition
DOI:10.1016/j.matlet.2010.09.076 JN:MATERIALS LETTERS PY:2011
TC:18 AU: Sinha, S. K.;Bhattacharya, R.;Ray, S. K.;Manna, I.;
10:220:7 Ultraviolet to visible-light range photocatalytic activity of ZnO films prepared using sol-gel method: The influence of solvent
DOI:10.1016/j.tsf.2012.11.138 JN:THIN SOLID FILMS PY:2013
TC:9 AU: Talebian, Nasrin;Nilforoushan, Mohammad Reza;Maleki, Najimeh;
10:220:8 In Situ Observations and Tuning of Physical and Chemical Phenomena on the Surfaces of Strongly Correlated Oxides
DOI:10.1002/adfm.201203425 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:3 AU: Gai, Zheng;Kalinin, S. V.;Li, An-Ping;Shen, Jian;Baddorf, A. P.;
10:220:9 Facile synthesis of silver sulfide/bismuth sulfide nanocomposites for photocatalytic inactivation of Escherichia coli under solar light irradiation
DOI:10.1016/j.matlet.2012.09.074 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Sun, Bing;Qiao, Zhi;Shang, Kun;Fan, Hai;Ai, Shiyun;
10:220:10 Structural and optical properties of ZnO-SnO2 mixed thin films deposited by spray pyrolysis
DOI:10.1016/j.tsf.2014.02.022 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Tharsika, T.;Haseeb, A. S. M. A.;Sabri, M. F. M.;
10:220:11 Influences of doping and annealing conditions on the photoluminescence from In2O3 nanocrystals and Eu3+ ions co-doped sol-gel SiO2 films
DOI:10.1063/1.3569889 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Lin, Tao;Ding, Xue-yun;Xu, Jun;Wan, Neng;Xu, Ling;Chen, Kun-ji;
10:220:12 Effect of Al doping on structural, optical and electrical properties of SnO2 thin films synthesized by pulsed laser deposition
DOI:10.1080/14786435.2014.962641 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Sinha, S. K.;Ray, S. K.;Manna, I.;
10:220:13 Strong energy-transfer-induced enhancement of Er3+ luminescence in In2O3 nanocrystal codoped silica films
DOI:10.1063/1.4827883 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Lin, Tao;Zhang, Xiaowei;Xu, Jun;Liu, Xin;Swihart, Mark T.;Xu, Ling;Chen, Kunji;
10:220:14 In-situ deposition of zinc oxide nanowires onto UV-cured chitin derivatives and their antibacterial properties
DOI:10.1016/j.mssp.2013.12.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Kilic, Bayram;Omay, Didem;
10:221:1 Sol-gel derived aluminum doped zinc oxide for application as anti-reflection coating in terrestrial silicon solar cells
DOI:10.1016/j.tsf.2009.08.010 JN:THIN SOLID FILMS PY:2010
TC:34 AU: Verma, Amita;Khan, F.;Kumar, D.;Kar, M.;Chakravarty, B. C.;Singh, S. N.;Husain, M.;
10:221:2 Influence of Ag doping on structural, optical, and photoluminescence properties of nanostructured AZO films by sol-gel technique
DOI:10.1016/j.jallcom.2013.09.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:8 AU: Khan, Firoz;Baek, Seong-Ho;Kim, Jae Hyun;
10:221:3 Optical and electrical properties of aluminum-doped zinc oxide nanoparticles
DOI:10.1007/s10853-010-4813-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:16 AU: Zhang, Yulong;Yang, Ye;Zhao, Junhua;Tan, Ruiqin;Wang, Weiyan;Cui, Ping;Song, Weijie;
10:221:4 Effect of aluminum oxide doping on the structural, electrical, and optical properties of zinc oxide (AOZO) nanofibers synthesized by electrospinning
DOI:10.1016/j.mseb.2009.10.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:26 AU: Lotus, A. F.;Kang, Y. C.;Walker, J. I.;Ramsier, R. D.;Chase, G. G.;
10:221:5 Structural and dielectric properties of Al-doped ZnO nanostructures
DOI:10.1016/j.ceramint.2013.11.052 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Zamiri, Reza;Singh, Budhendra;Belsley, Michael Scott;Ferreira, J. M. F.;
10:221:6 Tuning the oxidation states and crystallinity of copper oxide nanofibers by calcination
DOI:10.1116/1.4874617 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Park, Juyun;Seo, SungYong;Kang, Yong-Cheol;Koh, Sung-Wi;
10:221:7 Preparation and characterization of transparent Bi3.6Ho0.4Ti3O12/ZnO: Al ferroelectric-semiconductor heterostructure by pulsed laser deposition
DOI:10.1016/j.matlet.2012.04.032 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Luo, Sijun;Wang, Chuanbin;Zhang, Song;Tu, Rong;Shen, Qiang;Chen, Fei;Zhang, Lianmeng;
10:221:8 Investigation of aluminum and gallium co-doped ZnO powders and their effects on the properties of targets
DOI:10.1016/j.mssp.2013.11.034 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Wu, Ransong;Zhang, Weijia;Zhang, Hui;Song, Dengyuan;Ma, Qiang;Liu, Jia;Ma, Xiaobo;Zhang, Leng;Zhang, Lei;Song, Haiyang;
10:221:9 rf Power dependence on the chemical and structural properties of copper oxide thin films obtained at various oxygen fractions
DOI:10.1016/j.apsusc.2012.05.159 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Lim, Kyounga;Park, Juyun;Kim, Do-Geun;Kim, Jong-Kuk;Kang, Jae-Wook;Kang, Yong-Cheol;
10:221:10 Controlled growth and properties of p-type cuprous oxide films by plasma-enhanced atomic layer deposition at low temperature
DOI:10.1016/j.apsusc.2013.08.063 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Kwon, Jung-Dae;Kwon, Se-Hun;Jung, Tae-Hoon;Nam, Kee-Seok;Chung, Kwun-Bum;Kim, Dong-Ho;Park, Jin-Seong;
10:221:11 Sol-gel derived hydrogen annealed ZnO:Al films for silicon solar cell application
DOI:10.1016/j.solmat.2011.04.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:14 AU: Khan, Firoz;Vandana;Singh, S. N.;Husain, M.;Singh, P. K.;
10:221:12 Low-emitting surfaces prepared by applying transparent aluminum-doped zinc oxide coatings via a sol-gel process
DOI:10.1016/j.tsf.2011.04.105 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Rydzek, M.;Reidinger, M.;Arduini-Schuster, M.;Manara, J.;
10:221:13 Synthesis of supported fibrous nanoceramics via electrospinning
DOI:10.1016/j.ceramint.2012.02.046 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Starbova, K.;Petrov, D.;Starbov, N.;Lovchinov, V.;
10:221:14 Sol-gel-derived nanocrystalline aluminum-doped zinc oxide thin films for use as antireflection coatings in silicon solar cells
DOI:10.1557/jmr.2013.273 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:0 AU: Verma, Amita;Vijayan, Narayanasamy;
10:222:1 Effect of deposition parameters and annealing temperature on the structure and properties of Al-doped ZnO thin films
DOI:10.1016/j.matchemphys.2010.06.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:24 AU: Hsu, C. Y.;Lin, Y. C.;Kao, L. M.;Lin, Y. C.;
10:222:2 Deposition of Al-doped ZnO films on polyethylene naphthalate substrate with radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2010.05.098 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Kim, Jung-Min;Thiyagarajan, P.;Rhee, Shi-Woo;
10:222:3 Improved properties of Ti-doped ZnO thin films by hydrogen plasma treatment
DOI:10.1016/j.tsf.2011.01.083 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Wang, F. H.;Chang, H. P.;Chao, J. C.;
10:222:4 Structural and optoelectronic properties of Al-doped zinc oxide films deposited on flexible substrates by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2011.05.017 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Tseng, C. H.;Huang, C. H.;Chang, H. C.;Chen, D. Y.;Chou, C. P.;Hsu, C. Y.;
10:222:5 Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films
DOI:10.1016/j.ceramint.2012.12.099 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Lin, Y. C.;Hsu, C. Y.;Hung, S. K.;Wen, D. C.;
10:222:6 Fabrication and Characterization of Transparent Conductive ZnO:Al Thin Films Deposited on Polyethylene Terephthalate Substrates
DOI:10.1111/j.1551-2916.2012.05178.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:5 AU: Yang, Wei-Jen;Tsao, Chung-Chen;Hsu, Chun-Yoa;Chang, Hung-Chih;Chou, Chang-Ping;Kao, Jin-Yih;
10:222:7 Combining the Taguchi Method with an Artificial Neural Network to Construct a Multi-Target Prediction Model for Aluminum Zinc Oxide Semiconducting Transparent Thin Film
DOI:10.1166/jctn.2012.2610 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2012
TC:5 AU: Yang, Ching-Been;Hsu, Hsin-Yun;Chen, Chun-Sheng;
10:222:8 Photocatalytic Performance of TiO2 Thin Films Deposited on Soda-Lime Glass and the Effect of Post-Annealing on Their Properties
DOI:10.1166/jctn.2014.3549 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:0 AU: Wang, S. S.;Shiou, F. J.;Chiou, K. L.;Tsao, C. C.;Hsu, C. Y.;
10:222:9 The effect of SiO2 buffer layer on the electrical and structural properties of Al-doped ZnO films deposited on soda lime glasses
DOI:10.1016/j.apsusc.2010.10.099 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Ri, K. H.;Wang, Y. B.;Zhou, W. L.;Gao, J. X.;Wang, X. J.;Yu, J.;
10:222:10 The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing
DOI:10.1016/j.apsusc.2012.06.046 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Lina, Y. C.;Hsu, C. Y.;Hung, S. K.;Chang, C. H.;Wen, D. C.;
10:222:11 Structural Properties of Ga-Doped ZnO Films Grown on Polymer Substrates
DOI:10.1166/jctn.2014.3423 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2014
TC:2 AU: Wang, S. S.;Yang, C. B.;Shiou, F. J.;Hsu, C. Y.;
10:222:12 Room temperature DC magnetron sputtering deposition of hydrogenated aluminum doped zinc oxide thin films on polyethylene terephthalate substrates
DOI:10.1016/j.matlet.2013.05.063 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Zhu, Ke;Yang, Ye;Wei, Tiefeng;Tan, Ruiqin;Cui, Ping;Song, Weijie;Choy, Kwang-Leong;
10:222:13 Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering
DOI:10.1007/s00339-013-7733-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Hu, Yuehui;Chen, Yichuan;Chen, Jun;Chen, Xinhua;Ma, Defu;
10:222:14 Multi-Objective Prediction Model and Parameter Optimization Model for the Sputtering of Aluminum Zinc Oxide Semiconducting Transparent Thin Films
DOI:10.1166/jctn.2013.3168 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:2 AU: Yang, Ching-Been;Chiang, Hsiu-Lu;Hsu, Chun-Yao;
10:222:15 Study on the photocatalytic activities of TiO2 films prepared by reactive RF sputtering
DOI:10.1016/j.ceramint.2011.04.030 JN:CERAMICS INTERNATIONAL PY:2011
TC:7 AU: Huang, C. H.;Tsao, C. C.;Hsu, C. Y.;
10:222:16 Structural and electrical properties of sodium bismuth titanate (Na0.5Bi0.5TiO3) thin films optimized using the Taguchi approach
DOI:10.1016/j.ceramint.2013.08.019 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Daryapurkar, A. S.;Kolte, J. T.;Apte, P. R.;Gopalan, P.;
10:222:17 Highly conductive and transparent Al-doped ZnO films on glass substrate via incorporating hydrogen at low substrate temperatures
DOI:10.1016/j.matlet.2012.01.034 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Zhou, H. B.;Zhang, H. Y.;Wang, Z. G.;Tan, M. L.;
10:222:18 Transparent Zn-Doped In2O3 Electrode Prepared by Radio Frequency Facing Target Sputtering for Flexible Dye-Sensitized Solar Cells
DOI:10.1080/15421406.2011.563681 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2011
TC:0 AU: Choi, Young Cheol;Shin, Han Jae;Han, Dong Cheul;Ahn, Kwang-Soon;Kim, Jae Hong;Lee, Do Kyung;
10:223:1 Evidence for carrier-mediated magnetism in Mn-doped ZnO thin films
DOI:10.1103/PhysRevB.81.205202 JN:PHYSICAL REVIEW B PY:2010
TC:22 AU: Mukherjee, Devajyoti;Dhakal, Tara;Srikanth, Hariharan;Mukherjee, Pritish;Witanachchi, Sarath;
10:223:2 Influences of the type of dopant and substrate on ferromagnetism in ZnO:Mn
DOI:10.1016/j.jmmm.2013.11.048 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:9 AU: Wu, Kongping;Jiang, Jianhui;Tang, Kun;Gu, Shulin;Ye, Jiandong;Zhu, Shunming;Lu, Kailin;Zhou, Mengran;Xu, Mingxiang;Zhang, Rong;Zheng, Youdou;
10:223:3 Effects of codoping on the ferromagnetic enhancement in ZnO
DOI:10.1103/PhysRevB.83.235203 JN:PHYSICAL REVIEW B PY:2011
TC:12 AU: Lisenkov, Sergey;Andriotis, Antonis N.;Sheetz, R. Michael;Menon, Madhu;
10:223:4 Carrier-mediated nonlocal ferromagnetic coupling between local magnetic polarons in Fe-doped In2O3 and Co-doped ZnO
DOI:10.1103/PhysRevB.84.205204 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Qi, Shifei;Jiang, Fengxian;Fan, Jiuping;Wu, H.;Zhang, S. B.;Gehring, Gillian A.;Zhang, Zhenyu;Xu, Xiaohong;
10:223:5 Raman scattering and electrical properties of Zn1-xMnxO films
DOI:10.1016/j.jallcom.2012.03.116 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Ruan, H. B.;Fang, L.;Qin, G. P.;Wu, F.;Yang, T. Y.;Li, W. J.;Kong, C. Y.;
10:223:6 The electronic and magnetic properties of (Mn,N)-codoped ZnO from first principles
DOI:10.1063/1.3511365 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Zhao, L.;Lu, P. F.;Yu, Z. Y.;Guo, X. T.;Shen, Y.;Ye, H.;Yuan, G. F.;Zhang, L.;
10:223:7 Local structure and paramagnetic properties of Zn1-xMnxO
DOI:10.1063/1.3639303 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: The-Long Phan;Zhang, P.;Yang, D. S.;Nghia, N. X.;Yu, S. C.;
10:223:8 Post-annealing effects on structural and magnetic properties of Mn-N codoped ZnO thin films
DOI:10.1016/j.mssp.2014.01.019 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Ruan, Haibo;Fang, Liang;Li, Wanjun;Qin, Guoping;Wu, Fang;Kong, Chunyang;
10:223:9 Influence of Mn doping content on magnetic properties of a (Mn, N) co-doped ZnO system
DOI:10.1016/j.jmmm.2014.06.024 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:0 AU: Ruan, H. B.;Kong, C. Y.;Qin, G. P.;Li, W. J.;Yang, T. Y.;Wu, F.;Fang, L.;
10:223:10 Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.11.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Chien, K. F.;Yang, Y. L.;Tzou, A. J.;Chou, W. C.;
10:223:11 Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors
DOI:10.1016/j.jmmm.2011.12.030 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:11 AU: Wu, Kongping;Gu, Shulin;Tang, Kun;Ye, Jiandong;Zhu, Shunming;Zhou, Mengran;Huang, Yourui;Xu, Mingxiang;Zhang, Rong;Zheng, Youdou;
10:223:12 Electronic structure and magnetic interactions in Zn-doped beta-Ga2O3 from first-principles calculations
DOI:10.1016/j.commatsci.2014.02.020 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:1 AU: Guo, Yanrui;Yan, Huiyu;Song, Qinggong;Chen, Yifei;Guo, Songqing;
10:223:13 Carrier-mediated interaction of magnetic moments in oxygen vacancy-controlled epitaxial Mn-doped ZnO thin films
DOI:10.1063/1.3679067 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Mukherjee, Devajyoti;Mukherjee, Pritish;Srikanth, Hariharan;Witanachchi, Sarath;
10:223:14 Room temperature ferromagnetism in combustion reaction prepared iron-doped zinc oxide nanoparticles
DOI:10.1016/j.mssp.2013.07.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Franco, A., Jr.;Alves, T. E. P.;
10:224:1 Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
DOI:10.1016/j.jcrysgro.2011.03.004 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:15 AU: Kim, Dai Hong;Kwon, Ji-Hwan;Kim, Miyoung;Hong, Seong-Hyeon;
10:224:2 Epitaxial growth of orthorhombic SnO2 films on various YSZ substrates by plasma enhanced atomic layer deposition
DOI:10.1016/j.jcrysgro.2012.03.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Kim, Sungtae;Kim, Dai-Hong;Hong, Seong-Hyeon;
10:224:3 Brookite TiO2 Thin Film Epitaxially Grown on (110) YSZ Substrate by Atomic Layer Deposition
DOI:10.1021/am501656r JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Kim, Dai-Hong;Kim, Won-Sik;Kim, Sungtae;Hong, Seong-Hyeon;
10:224:4 Structural and optical properties of single crystalline columbite tin oxide film
DOI:10.1063/1.3603936 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Kong, Lingyi;Ma, Jin;Luan, Caina;Zhu, Zhen;
10:224:5 Synthesis of orthorhombic structure epitaxial tin oxide film
DOI:10.1016/j.matlet.2010.03.058 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Kong, Lingyi;Ma, Jin;Zhu, Zhen;Luan, Caina;Yu, Xinhao;Yu, Qiaoqun;
10:224:6 Heteroepitaxial growth of SnO2 thin films on SrTiO3 (111) single crystal substrate by laser molecular beam epitaxy
DOI:10.1063/1.3273494 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Ke, C.;Yang, Z.;Zhu, W.;Pan, J. S.;Karamat, S.;
10:224:7 Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates
DOI:10.1016/j.apsusc.2010.10.013 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Zhu, Zhen;Ma, Jin;Luan, Caina;Kong, Lingyi;Yu, Qiaoqun;
10:224:8 Epitaxial growth of SnO2 films on 6H-SiC (0001) by MOCVD
DOI:10.1016/j.materresbull.2011.11.034 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:4 AU: Zhu, Zhen;Ma, Jin;Luan, Caina;Mi, Wei;Lv, Yu;
10:224:9 Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD
DOI:10.1016/j.jcrysgro.2011.04.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Zhu, Zhen;Ma, Jin;Kong, Lingyi;Luan, Caina;Yu, Qiaoqun;
10:224:10 Twin structures of epitaxial SnO2 films grown on a-cut sapphire by metalorganic chemical vapor deposition
DOI:10.1116/1.3683042 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:2 AU: Zhu, Zhen;Ma, Jin;Luan, Caina;Mi, Wei;Lv, Yu;
10:224:11 Annealing induced anomalous electrical transport behavior in SnO2 thin films prepared by pulsed laser deposition
DOI:10.1063/1.3481376 JN:APPLIED PHYSICS LETTERS PY:2010
TC:1 AU: Ke, C.;Yang, Z.;Pan, J. S.;Zhu, W.;Wang, L.;
10:224:12 RHEED study of the growth of cerium oxide on Cu(111)
DOI:10.1016/j.apsusc.2012.06.014 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Masek, Karel;Beran, Jan;Matolin, Vladimir;
10:224:13 RHEED and XPS study of cerium interaction with SnO2 (110) surface
DOI:10.1016/j.ceramint.2013.06.005 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Beran, J.;Hishita, S.;Masek, K.;Matolin, V.;Haneda, H.;
10:224:14 Growth and structure of an ultrathin tin oxide film on Rh(111)
DOI:10.1063/1.3537871 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Yuhara, J.;Tajima, D.;Matsui, T.;Tatsumi, K.;Muto, S.;Schmid, M.;Varga, P.;
10:224:15 Disordered surface structure of an ultra-thin tin oxide film on Rh(100)
DOI:10.1063/1.3697995 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Zenkyu, R.;Tajima, D.;Yuhara, J.;
10:224:16 Epitaxial growth of tin oxide film on TiO2(110) using molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.07.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Hishita, Shunichi;Janecek, Petr;Haneda, Hajime;
10:224:17 Characterization of beta-Ga2O3 epitaxial films grown on MgO (111) substrates by metal-organic chemical vapor deposition
DOI:10.1016/j.matlet.2012.07.106 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Mi, Wei;Ma, Jin;Luan, Caina;Lv, Yu;Xiao, Hongdi;Li, Zhao;
10:224:18 Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films
DOI:10.1007/s00339-012-7337-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Abhirami, K. M.;Matheswaran, P.;Gokul, B.;Sathyamoorthy, R.;Asokan, K.;
10:224:19 Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on (001) ceria
DOI:10.1016/j.jcrysgro.2014.09.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Solovyov, Vyacheslav F.;Wu, Li-jun;Rupich, Martin W.;Sathyamurthy, Srivatsan;Li, Xiaoping;Li, Qiang;
10:225:1 Hydrothermal synthesis and humidity sensing property of ZnO nanostructures and ZnO-In(OH)(3) nanocomposites
DOI:10.1016/j.jcis.2012.04.050 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:5 AU: Pal, Edit;Hornok, Viktoria;Kun, Robert;Oszko, Albert;Seemann, Torben;Dekany, Imre;Busse, Matthias;
10:225:2 Fast photocatalytic degradation of an organic dye and photoluminescent properties of Zn doped In(OH)(3) obtained by the microwave-assisted hydrothermal method
DOI:10.1016/j.mssp.2014.08.034 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Tavares, M. T. S.;Lovisa, L. X.;Araujo, V. D.;Longo, E.;Li, M. S.;Nascimento, R. M.;Paskocimas, C. A.;Bomio, M. R. D.;Motta, F. V.;
10:225:3 Growth of raspberry-, prism- and flower-like ZnO particles using template-free low-temperature hydrothermal method and their application as humidity sensors
DOI:10.1007/s11051-012-1002-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:1 AU: Pal, Edit;Hornok, Viktoria;Kun, Robert;Chernyshev, Vladimir;Seemann, Torben;Dekany, Imre;Busse, Matthias;
10:225:4 Indium hydroxide nanocubes and microcubes obtained by microwave-assisted hydrothermal method
DOI:10.1016/j.jallcom.2010.03.069 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:15 AU: Motta, F. V.;Lima, R. C.;Marques, A. P. A.;Li, M. S.;Leite, E. R.;Varela, J. A.;Longo, E.;
10:225:5 Preparation and photoluminescence characteristics of In(OH)(3):xTb(3+) obtained by Microwave-Assisted Hydrothermal method
DOI:10.1016/j.jallcom.2012.11.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Motta, F. V.;Marques, A. P. A.;Li, M. S.;Abreu, M. F. C.;Paskocimas, C. A.;Bomio, M. R. D.;Souza, R. P.;Varela, J. A.;Longo, E.;
10:225:6 Synthesis of colloidal PbSe nanoparticles using a microwave-assisted segmented flow reactor
DOI:10.1016/j.matlet.2014.04.089 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Hostetler, Eric B.;Kim, Ki-Joong;Oleksak, Richard P.;Fitzmorris, Robert C.;Peterson, Daniel A.;Chandran, Padmavathi;Chang, Chih-Hung;Paul, Brian K.;Schut, David M.;Herman, Gregory S.;
10:225:7 Morphology-luminescence correlations in europium-doped ZnO nanomaterials
DOI:10.1007/s11051-009-9598-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:8 AU: Yang, Yuming;Lai, Hua;Xu, Haitao;Tao, Chunyan;Yang, Hua;
10:225:8 Synthesis and characterization of Mg-doped ZnO hollow spheres
DOI:10.1007/s11051-010-9978-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:11 AU: Hammad, Talaat M.;Salem, Jamil K.;
10:225:9 Effect of surface oxide film and atmosphere on microwave heating of compacted copper powder
DOI:10.1016/j.matchemphys.2010.09.066 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:1 AU: Sueyoshi, Hidekazu;Hashiguchi, Tomokazu;Nakatsuru, Nobuhiro;Kakiuchi, Shigeki;
10:225:10 One-pot synthesis of ferromagnetic Fe2.25W0.75O4 nanoparticles as a magnetically recyclable photocatalyst
DOI:10.1007/s11051-012-0992-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:3 AU: Guo, Jinxue;Zhou, Xiaoyu;Chen, Lei;Lu, Yibin;Zhang, Xiao;Hou, Wanguo;
10:225:11 Electrodeposition of CuInxGa1-xSe2 from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid
DOI:10.1016/j.matlet.2014.06.147 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Ji, Shanshan;Yang, Peixia;Zhang, Jinqiu;Lian, Ye;Zhang, Jie;An, Maozhong;
10:225:12 The effect of polyvinyl alcohol addition on the physicochemical properties of ZnO synthesized by ethylene glycol-hydrothermal method
DOI:10.1016/j.matchemphys.2010.06.069 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:3 AU: Zobir, Syazwan Afif Mohd;Zainal, Zulkarnain;Hussein, Mohd Zobir;
10:225:13 Self-assembled Cu(In,Ga)Se-2 nanocrystals formed by Ar ion beam irradiation
DOI:10.1016/j.solmat.2012.05.034 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:1 AU: Lee, Ji-Yeong;Ahmed, Sk Faruque;Park, Min-Ho;Ha, Seung-kyu;Park, Jong-Ku;Yun, Jae Ho;Ahn, Se Jin;Lee, Kwang-Ryeol;Choi, Won Jun;Moon, Myoung-Woon;Yang, Cheol-Woong;
10:225:14 In2O3 microcrystals obtained from rapid calcination in domestic microwave oven
DOI:10.1016/j.materresbull.2010.06.056 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:9 AU: Motta, F. V.;Lima, R. C.;Marques, A. P. A.;Leite, E. R.;Varela, J. A.;Longo, E.;
10:225:15 Synthesis of MnCO3 nanoparticles by microemulsions: statistical evaluation of the effects of operating conditions on particle size distribution
DOI:10.1007/s11051-013-1887-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Pagnanelli, Francesca;Granata, Giuseppe;Moscardini, Emanuela;Toro, Luigi;
10:225:16 Preparation and photoluminescence study of mesoporous indium hydroxide nanorods
DOI:10.1016/j.materresbull.2009.10.002 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:4 AU: Li, Changyu;Lian, Suoyuan;Liu, Yang;Liu, Shouxin;Kang, Zhenhui;
10:226:1 Deposition of transparent and conductive ZnO films by an atmospheric pressure plasma-jet-assisted process
DOI:10.1016/j.tsf.2014.02.102 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Hsu, C. M.;Lien, S. T.;Yang, Y. J.;Chen, J. Z.;Cheng, I. C.;Hsu, C. C.;
10:226:2 Deposition of zinc oxide thin films by an atmospheric pressure plasma jet
DOI:10.1016/j.tsf.2010.12.156 JN:THIN SOLID FILMS PY:2011
TC:28 AU: Hsu, Yao-wen;Li, Hsin-Chieh;Yang, Yao-Jhen;Hsu, Cheng-che;
10:226:3 Role of film thickness on the properties of ZnO thin films grown by sol-gel method
DOI:10.1016/j.tsf.2013.05.088 JN:THIN SOLID FILMS PY:2013
TC:14 AU: Kumar, Vinod;Singh, Neetu;Mehra, R. M.;Kapoor, Avinashi;Purohit, L. P.;Swart, H. C.;
10:226:4 Thickness dependency of sol-gel derived ZnO thin films on gas sensing behaviors
DOI:10.1016/j.tsf.2010.08.005 JN:THIN SOLID FILMS PY:2010
TC:33 AU: Kakati, Nitul;Jee, Seung Hyun;Kim, Su Hyun;Oh, Jun Young;Yoon, Young Soo;
10:226:5 Super-Fast Switching of Twisted Nematic Liquid Crystals on 2D Single Wall Carbon Nanotube Networks
DOI:10.1002/adfm.201101345 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:20 AU: Lee, Won-Kyu;Choi, Yeon Sik;Kang, Young-Gu;Sung, Jinwoo;Seo, Dae-Shik;Park, Cheolmin;
10:226:6 Influence of precursor solution volume on the properties of spray deposited alpha-MoO3 thin films
DOI:10.1016/j.ceramint.2013.11.022 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Kaman, B.;Pandeeswari, R.;Jeyaprakash, B. G.;
10:226:7 Influence of core temperature on physical and H2S sensing properties of zinc oxide thin films
DOI:10.1016/j.jallcom.2012.06.083 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Shewale, P. S.;Moholkar, A. V.;Kim, J. H.;Uplane, M. D.;
10:226:8 Surface reformation on solution-derived zinc oxide films for liquid crystal systems via ion-beam irradiation
DOI:10.1039/c3tc31470g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:5 AU: Lee, Jong-Jin;Park, Hong-Gyu;Han, Jae-Jun;Kim, Dai-Hyun;Seo, Dae-Shik;
10:226:9 Spontaneous liquid crystal alignment on solution-derived nanocrystalline tin-oxide films
DOI:10.1039/c4tc00303a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Park, Hong-Gyu;Jeong, Hae-Chang;Han, Jae-Jun;Kim, Seon Yeong;Kim, Jeong-Hwan;Kim, Dai-Hyun;Seo, Dae-Shik;
10:226:10 Study of plasma enhanced chemical vapor deposition of ZnO films by non-thermal plasma jet at atmospheric pressure
DOI:10.1016/j.tsf.2009.11.034 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Ito, Yosuke;Sakai, Osamu;Tachibana, Kunihide;
10:226:11 Tin dioxide inorganic nanolevel films with different liquid crystal molecular orientations for application in liquid crystal displays (LCDs)
DOI:10.1039/c2jm13689a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:16 AU: Kang, Young-Gu;Kim, Hyung-Jun;Park, Hong-Gyu;Kim, Byoung-Yong;Seo, Dae-Shik;
10:226:12 Influence of mesoporous substrate morphology on the structural, optical and electrical properties of RF sputtered ZnO layer deposited over porous silicon nanostructure
DOI:10.1016/j.apsusc.2011.09.131 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Kumar, Yogesh;Escorcia Garcia, J.;Singh, Fouran;Olive-Mendez, S. F.;Sivakumar, V. V.;Kanjilal, D.;Agarwal, V.;
10:227:1 Growth of Transparent and Conductive Polycrystalline (0001)-ZnO Films on Glass Substrates Under Low-Temperature Hydrothermal Conditions
DOI:10.1002/adfm.201200214 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:22 AU: Podlogar, Matejka;Richardson, Jacob J.;Vengust, Damjan;Daneu, Nina;Samardzija, Zoran;Bernik, Slavko;Recnik, Aleksander;
10:227:2 Hydrothermal epitaxial growth of ZnO films on sapphire substrates presenting epitaxial ZnAl2O4 buffer layers
DOI:10.1016/j.matchemphys.2013.12.044 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Chen, Hou-Guang;Wang, Chi-Wei;Tu, Zhi-Fan;
10:227:3 Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: growth and post-annealing
DOI:10.1007/s10853-012-6918-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:5 AU: Nijikovsky, Boris;Richardson, Jacob J.;Garbrecht, Magnus;DenBaars, Steven P.;Kaplan, Wayne D.;
10:227:4 Seed-assisted growth of epitaxial ZnO nanorod arrays with self-organized periodicity and directional alignment
DOI:10.1016/j.apsusc.2011.08.069 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Chen, Hou-Guang;Li, Zheng-Wei;
10:227:5 Epitaxial growth of self-ordered ZnO nanostructures on sapphire substrates by seed-assisted hydrothermal growth
DOI:10.1016/j.jcrysgro.2011.12.092 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:9 AU: Chen, Hou-Guang;Lian, Hong-De;Hung, Sung-Po;Wang, Chih-Feng;
10:227:6 Facile hydrothermal epitaxial growth of vertical ZnO post arrays on sapphire substrates
DOI:10.1016/j.matlet.2013.06.024 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Chen, Hou-Guang;Wang, Chi-Wei;Tu, Zhi-Fan;
10:227:7 Control of epitaxial growth orientation in ZnO nanorods on c-plane sapphire substrates
DOI:10.1016/j.tsf.2010.04.054 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Chen, Hou-Guang;Li, Zheng-Wei;Lian, Hong-De;
10:227:8 Epitaxial growth of self-arranged periodic ZnO nanostructures on sapphire substrates grown by MOCVD
DOI:10.1016/j.jallcom.2010.02.195 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Chen, Hou-Guang;Jian, Sheng-Rui;Li, Zheng-Wei;Chen, Kuan-Wei;Li, Jhih-Cheng;
10:227:9 ZnO microrod/PDMS composites promote biaxially oriented growth of ZnO films on glass substrates
DOI:10.1016/j.matlet.2014.09.049 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Chen, Hou-Guang;Yu, Ming-Yang;
10:227:10 Growth of aligned ZnO nanorods on transparent electrodes by hybrid methods
DOI:10.1007/s10853-011-6002-x JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:7 AU: Melendrez, M. F.;Hanks, K.;Leonard-Deepak, Francis;Solis-Pomar, F.;Martinez-Guerra, E.;Perez-Tijerina, E.;Jose-Yacaman, M.;
10:227:11 Aqueous lateral epitaxy overgrowth of ZnO on (0001) GaN at 90 degrees C: Part I. Increasing the critical thickness
DOI:10.1016/j.tsf.2010.03.066 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Fillery, Scott P.;Lange, Frederick F.;
10:227:12 Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method
DOI:10.1016/j.apsusc.2010.04.083 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Shan, Hai-Yan;Li, Jie;Li, Shuai;Zhang, Qing-Yu;
10:227:13 Epitaxial Growth of ZnO Films on ZnO-Buffered Al2O3 (0001) in Water at 95 degrees C
DOI:10.1111/j.1551-2916.2011.04406.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:6 AU: Park, Jae Young;Choi, Sun-Woo;Kim, Sang Sub;
10:227:14 The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties
DOI:10.1016/j.tsf.2010.07.117 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Jiang, Yinzhu;Bahlawane, Naoufal;
10:227:15 Reduction of threading dislocations in hydrothermally grown ZnO films by lateral epitaxial overgrowth
DOI:10.1016/j.tsf.2010.03.111 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Zhang, Y. B.;Goh, G. K. L.;Li, S.;
10:228:1 Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates
DOI:10.1016/j.solmat.2010.02.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:42 AU: Gong, Li;Lu, Jianguo;Ye, Zhizhen;
10:228:2 Optical and structural properties of Zn1-xMgxO ceramic materials
DOI:10.1007/s00339-014-8279-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:4 AU: Othman, Zayani Jaafar;Matoussi, Adel;Fabbri, Filippo;Rossi, Francesca;Salviati, Giancarlo;
10:228:3 Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells
DOI:10.1016/j.apsusc.2011.11.028 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Tao, Ke;Sun, Yun;Cai, Hongkun;Zhang, Dexian;Xie, Ke;Wang, Yuan;
10:228:4 Optical and electrical properties of ZnO:Al thin films synthesized by low-pressure pulsed laser deposition
DOI:10.1016/j.mssp.2011.01.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:13 AU: Gu, X. Q.;Zhu, L. P.;Cao, L.;Ye, Z. Z.;He, H. P.;Chu, Paul K.;
10:228:5 Study on the thermal stability of Ga-doped ZnO thin film: A transparent conductive layer for dye-sensitized TiO2 nanoparticles based solar cells
DOI:10.1016/j.mssp.2014.05.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Gong, Li;Liu, Yunzhen;Gu, Xiuquan;Lu, Jianguo;Zhang, Jie;Ye, Zhizhen;Chen, Zhaoyong;Li, Lingjun;
10:228:6 Properties of cobalt-doped zinc oxide thin films grown by pulsed laser deposition on glass substrates
DOI:10.1016/j.mssp.2014.05.074 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Taabouche, Adel;Bouabellou, Abderrahmane;Kermiche, Fouad;Hanini, Faouzi;Bouachiba, Yacine;Grid, Azzeddine;Kerdjac, Tahar;
10:228:7 Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells
DOI:10.1016/j.tsf.2011.04.199 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Chen, Xin-liang;Lin, Quan;Ni, Jian;Zhang, De-kun;Sun, Jian;Zhao, Ying;Geng, Xin-hua;
10:228:8 Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature
DOI:10.1016/j.mssp.2013.07.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Ahn, Kyung-Jun;Lee, Sanghun;Kim, Won-Jeong;Yeom, Geun Young;Lee, Woong;
10:228:9 Deposition of aluminum oxide-doped zinc oxide transparent nano-films on glass substrates for electrostatic discharge applications
DOI:10.1016/j.mssp.2012.03.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:4 AU: Aussawasathien, Darunee;Teerawattananon, Chanpen;
10:228:10 Development of low temperature RF magnetron sputtered ITO films on flexible substrate
DOI:10.1016/j.solmat.2010.03.037 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:12 AU: Muneshwar, T. P.;Varma, V.;Meshram, N.;Soni, S.;Dusane, R. O.;
10:228:11 ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties
DOI:10.1155/2011/691582 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:5 AU: Huso, Jesse;Morrison, John L.;Che, Hui;Sundararajan, Jency P.;Yeh, Wei Jiang;McIlroy, David;Williams, Thomas J.;Bergman, Leah;
10:228:12 Electrochemical deposition of Al-doped ZnO transparent conducting nanowire arrays for thin-film solar cell electrodes
DOI:10.1016/j.matlet.2013.11.122 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Chen, Jianlin;Chen, Jian;Chen, Ding;Zhou, Yi;Li, Wei;Ren, Yanjie;Hu, Linlin;
10:228:13 Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering
DOI:10.1016/j.tsf.2011.04.084 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Park, Hyeongsik;Jang, Kyungsoo;Kumar, Krishna;Ahn, Shihyun;Cho, Jaehyun;Jang, Juyeon;Ahn, Kyungjun;Yeom, Jeonghoon;Kim, Dongseok;Yi, Junsin;
10:229:1 Study on field emission and photoluminescence properties of ZnO/graphene hybrids grown on Si substrates
DOI:10.1016/j.matchemphys.2012.01.051 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:21 AU: Ding, Jijun;Yan, Xingbin;Xue, Qunji;
10:229:2 Photoluminescence investigation about zinc oxide with graphene oxide & reduced graphene oxide buffer layers
DOI:10.1016/j.jcis.2013.10.059 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:1 AU: Ding, Jijun;Wang, Minqiang;Zhang, Xiangyu;Yang, Zhi;Song, Xiaohui;Ran, Chenxin;
10:229:3 Temperature-dependent photoluminescence from chemically and thermally reduced graphene oxide
DOI:10.1063/1.3616142 JN:APPLIED PHYSICS LETTERS PY:2011
TC:16 AU: Tran Viet Cuong;Viet Hung Pham;Shin, Eun Woo;Chung, Jin Suk;Hur, Seung Hyun;Kim, Eui Jung;Quang Trung Tran;Hoang Hung Nguyen;Kohl, Paul A.;
10:229:4 Interface-Engineered Resistive Switching: CeO2 Nanocubes as High-Performance Memory Cells
DOI:10.1021/am403243g JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:16 AU: Younis, Adnan;Chu, Dewei;Mihail, Ionsecu;Li, Sean;
10:229:5 A simple method of synthesis and optical properties of Mn doped ZnO nanocups
DOI:10.1016/j.matlet.2012.10.034 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Chakraborty, S.;Tiwary, C. S.;Kole, A. K.;Kumbhakar, P.;Chattopadhyay, K.;
10:229:6 Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films
DOI:10.1063/1.4903796 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ding, Jijun;Wang, Minqiang;Zhang, Xiangyu;Ran, Chenxin;Shao, Jinyou;Ding, Yucheng;
10:229:7 Facile Synthesis, Characterization of ZnO Nanotubes and Nanoflowers in an Aqueous Solution
DOI:10.1111/j.1551-2916.2009.03506.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:16 AU: Chu, Dewei;Masuda, Yoshitake;Ohji, Tatsuki;Kato, Kazumi;
10:229:8 Point defects analysis of zinc oxide thin films annealed at different temperatures with photoluminescence, Hall mobility, and low frequency noise
DOI:10.1063/1.3494046 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Ke, Lin;Lai, Szu Cheng;Ye, Jian Dong;Kaixin, Vivian Lin;Chua, Soo Jin;
10:229:9 Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles
DOI:10.1016/j.materresbull.2012.11.026 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:8 AU: Singh, V. P.;Das, D.;Rath, Chandana;
10:229:10 Resonant photoluminescent charging of epitaxial graphene
DOI:10.1063/1.3396201 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Lounis, S. D.;Siegel, D. A.;Broesler, R.;Hwang, C. G.;Haller, E. E.;Lanzara, A.;
10:230:1 The evolution behavior of structures and photoluminescence of K-doped ZnO thin films under different annealing temperatures
DOI:10.1016/j.jallcom.2010.11.164 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:30 AU: Xu, Linhua;Gu, Fang;Su, Jing;Chen, Yulin;Li, Xiangyin;Wang, Xiaoxiong;
10:230:2 Room-temperature ferromagnetism induced by Na co-doping and K co-doping in the rare earth Er doped ZnO nanocrystallites
DOI:10.1016/j.jallcom.2014.06.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Sivasankari, J.;Sankar, S.;Selvakumar, S.;Sivaji, K.;
10:230:3 Synthesis, structural and optical properties of Er doped, Li doped and Er plus Li co-doped ZnO nanocrystallites by solution-combustion method
DOI:10.1016/j.matchemphys.2013.12.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:5 AU: Sivasankari, J.;Sankar, S.;Selvakumar, S.;Vimaladevi, L.;Krithiga, R.;
10:230:4 Origin of the unexpected room temperature ferromagnetism: formation of artificial defects on the surface in NaCl particles
DOI:10.1039/c3tc30972j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Zhang, Jing;Gao, Daqiang;Si, Mingsu;Zhu, Zhonghua;Yang, Guijin;Shi, Zhenhua;Xue, Desheng;
10:230:5 Optical and structural analysis of rare earth and Li co-doped ZnO nanoparticles
DOI:10.1016/j.jallcom.2012.10.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:16 AU: Li, Honglin;Zhang, Zhong;Huang, Jinzhao;Liu, Ruxi;Wang, Qingbao;
10:230:6 Structural and optical characterization of MgO: X (X = Li, Na, and K) by solution combustion technique
DOI:10.1016/j.jallcom.2014.07.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Sivasankari, J.;Selvakumar, S.;Sivaji, K.;Sankar, S.;
10:230:7 Effect of the annealing temperature on the structural and magnetic properties of ZnO nanoparticles
DOI:10.1016/j.matlet.2013.02.064 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Aljawfi, Rezq Naji;Rahman, F.;Shukla, D. K.;
10:230:8 Influence of Ni doping on magnetic behavior of Mn doped ZnO
DOI:10.1016/j.matlet.2010.11.044 JN:MATERIALS LETTERS PY:2011
TC:12 AU: Das, J.;Mishra, D. K.;Sahu, D. R.;Roul, B. K.;
10:230:9 Effects of surfactants, solvents and time on the morphology of MgO nanoparticles prepared by the wet chemical method
DOI:10.1016/j.matlet.2013.07.085 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Samodi, Asadollah;Rashidi, Alimorad;Marjani, Katayoun;Ketabi, Sakineh;
10:230:10 Effect of trivalent dopants on local coordination and electronic structure in crystalline and amorphous ZnO
DOI:10.1016/j.tsf.2013.05.140 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Ramo, D. Munoz;Chroneos, A.;Rushton, M. J. D.;Bristowe, P. D.;
10:230:11 First-principle studies on the conductive behaviors of Ga, N single-doped and Ga-N codoped ZnO
DOI:10.1016/j.commatsci.2010.07.019 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:7 AU: Li, P.;Deng, Sh. H.;Zhang, L.;Li, Y. B.;Zhang, X. Y.;Xu, J. R.;
10:230:12 First-principles study of p-type nitrogen/aluminum co-doped zinc oxide
DOI:10.1016/j.mssp.2014.07.050 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Li Honglin;Lv Yingbo;Li Jinzhu;Yu Ke;
10:230:13 Metastability of heavy lanthanides in the ZnO wurtzite structure
DOI:10.1016/j.jallcom.2011.02.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:2 AU: Hernan Otal, Eugenio;Yoon, Songhak;Aguirre, Myriam;Weidenkaff, Anke;
10:230:14 Synthesis and characterizations of nano sized MgO and its nano composite with poly(vinyl alcohol)
DOI:10.1016/j.jnoncrysol.2010.09.050 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:9 AU: Gandhi, S.;Abiramipriya, P.;Pooja, N.;Jeyakumari, J. Juliat Latha;Arasi, A. Yelil;Dhanalakshmi, V.;Nair, M. R. Gopinathan;Anbarasan, R.;
10:231:1 Biodegradability study and pH influence on growth and orientation of ZnO nanorods via aqueous solution process
DOI:10.1016/j.apsusc.2012.03.051 JN:APPLIED SURFACE SCIENCE PY:2012
TC:20 AU: Kumar, P. Suresh;Paik, P.;Raj, A. Dhayal;Mangalaraj, D.;Nataraj, D.;Gedanken, A.;Ramakrishna, S.;
10:231:2 Enhanced super-hydrophobic and switching behavior of ZnO nanostructured surfaces prepared by simple solution - Immersion successive ionic layer adsorption and reaction process
DOI:10.1016/j.jcis.2011.07.015 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:29 AU: Kumar, P. Suresh;Sundaramurthy, J.;Mangalaraj, D.;Nataraj, D.;Rajarathnam, D.;Srinivasan, M. P.;
10:231:3 Dye-Sensitized Solar Cells: Sensitizer-Dependent Injection into ZnO Nanotube Electrodes
DOI:10.1021/la902991z JN:LANGMUIR PY:2010
TC:31 AU: Jensen, Rebecca A.;Van Ryswyk, Hal;She, Chunxing;Szarko, Jodi M.;Chen, Lin X.;Hupp, Joseph T.;
10:231:4 Enhanced acetone sensing characteristics by decorating Au nanoparticles on ZnO flower-like structures
DOI:10.1007/s00339-012-7333-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Peng, Cheng;Liu, Yanli;
10:231:5 Nanostructured films from phthalocyanine and carbon nanotubes: Surface morphology and electrical characterization
DOI:10.1016/j.jcis.2011.10.004 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:10 AU: Brito, Jackeline B.;Gomes, Douglas J. C.;Justina, Vanessa D.;Lima, Aline M. F.;Olivati, Clarissa A.;Silva, Josmary R.;de Souza, Nara C.;
10:231:6 Synthesis, characterization and optical-electrical properties of nano Al(III)-8-hydroxy-5,7-dinitroquinolate thin films
DOI:10.1016/j.tsf.2014.07.008 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Haggag, Sawsan M. S.;Farag, A. A. M.;Refea, M. Abdel;
10:231:7 The fabrication of a patterned ZnO nanorod array for high brightness LEDs
DOI:10.1088/0957-4484/21/35/355304 JN:NANOTECHNOLOGY PY:2010
TC:24 AU: Park, Hyoungwon;Byeon, Kyeong-Jae;Yang, Ki-Yeon;Cho, Joong-Yeon;Lee, Heon;
10:231:8 Effect of Annealing on the Structure and Photoluminescence of Eu-Doped ZnO Nanorod Ordered Array Thin Films
DOI:10.1155/2012/263679 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Zhong, Wen-Wu;Guan, Da-Wei;Liu, Yue-Lin;Zhang, Li;Liu, Yan-Ping;Li, Zhi-Gang;Chen, Wei-Ping;
10:231:9 Performance enhancement of NiTsPc based photo sensor using treated TiO2 NPs film
DOI:10.1007/s11051-014-2705-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Qadir, Karwan Wasman;Ahmad, Zubair;Sulaiman, Khaulah;
10:231:10 Synthesis and characterization of fluorescent chitosan-ZnO hybrid nanospheres
DOI:10.1016/j.mseb.2011.01.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:10 AU: Yan, Eryun;Wang, Cheng;Wang, Shuhong;Sun, Liguo;Wang, Yuwei;Fan, Liquan;Zhang, Deqing;
10:231:11 Growth of strained La1-xSrxCoO30 films and multilayers using layer-by-layer growth
DOI:10.1016/j.tsf.2010.07.061 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Trommler, S.;Huehne, R.;Rata, A. D.;Schultz, L.;Holzapfel, B.;
10:232:1 Recent progress in the ZnO nanostructure-based sensors
DOI:10.1016/j.mseb.2011.09.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:91 AU: Wei, Ang;Pan, Liuhua;Huang, Wei;
10:232:2 Performance of Cr-doped ZnO for acetone sensing
DOI:10.1016/j.apsusc.2013.01.064 JN:APPLIED SURFACE SCIENCE PY:2013
TC:14 AU: Al-Hardan, N. H.;Abdullah, M. J.;Aziz, A. Abdul;
10:232:3 The properties of ethanol gas sensor based on Ti doped ZnO nanotetrapods
DOI:10.1016/j.mseb.2009.09.029 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:44 AU: Zheng, Kaibo;Gu, Leilei;Sun, Dalin;Mo, XiaoLiang;Chen, Guorong;
10:232:4 Low operating temperature of oxygen gas sensor based on undoped and Cr-doped ZnO films
DOI:10.1016/j.apsusc.2009.12.055 JN:APPLIED SURFACE SCIENCE PY:2010
TC:26 AU: Al-Hardan, N.;Abdullah, M. J.;Aziz, A. Abdul;Ahmad, H.;
10:232:5 Preparation of high-aspect-ratio ZnO nanorod arrays for the detection of several organic solvents at room working temperature
DOI:10.1016/j.apsusc.2013.08.046 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Lee, Yi-Mu;Zheng, Min-Ren;
10:232:6 Impedance spectroscopy of undoped and Cr-doped ZnO gas sensors under different oxygen concentrations
DOI:10.1016/j.apsusc.2011.05.078 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Al-Hardan, N.;Abdullah, M. J.;Aziz, A. Abdul;
10:232:7 Enhanced ethanol sensing properties of Zn-doped SnO2 porous hollow microspheres
DOI:10.1016/j.apsusc.2012.08.118 JN:APPLIED SURFACE SCIENCE PY:2012
TC:15 AU: Wang, Wenchuang;Tian, Yongtao;Li, Xinjian;Wang, Xinchang;He, Hao;Xu, Yurui;He, Chuan;
10:232:8 Gas sensitive ZnO thin films with desired (002) or (100) orientation obtained by ultrasonic spray pyrolysis
DOI:10.1016/j.matchemphys.2014.08.039 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Dimitrov, O.;Nesheva, D.;Blaskov, V.;Stambolova, I.;Vassilev, S.;Levi, Z.;Tonchev, V.;
10:232:9 The characterization of Cr secondary oxide phases in ZnO films studied by X-ray spectroscopy and photoemission spectroscopy
DOI:10.1016/j.apsusc.2010.12.125 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Chiou, J. W.;Chang, S. Y.;Huang, W. H.;Chen, Y. T.;Hsu, C. W.;Hu, Y. M.;Chen, J. M.;Chen, C. -H.;Kumar, K.;Guo, J. -H.;
10:232:10 Thin nanocrystalline TiO2-SnO2 sprayed films: Influence of the dopant concentration, substrate and thermal treatment on the phase composition and crystallites sizes
DOI:10.1016/j.jallcom.2009.09.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:16 AU: Stambolova, I.;Blaskov, V.;Vassilev, S.;Shipochka, M.;Dushkin, C.;
10:232:11 Rapid thermal annealing of ZnO thin films grown at room temperature
DOI:10.1116/1.3290759 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:11 AU: Jang, Young Rae;Yoo, Keon-Ho;Park, Seung Min;
10:232:12 Nanostructured mixed ZnO and CdO thin film for selective ethanol sensing
DOI:10.1016/j.matlet.2012.03.009 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Sivalingam, Durgajanani;Gopalakrishnan, Jeyaprakash Beri;Rayappan, John Bosco Balaguru;
10:232:13 Electronic structure of chromium-containing amorphous hydrogenated carbon thin films studied by X-ray absorption spectroscopy
DOI:10.1016/j.apsusc.2012.09.172 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Cheng, Hsin-Yen;Chiou, Jau-Wern;Ting, Jyh-Ming;Chen, Jin-Ming;Lee, Jyh-Fu;Tzeng, Yonhua;
10:233:1 Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers
DOI:10.1016/j.jallcom.2013.08.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:14 AU: Mhamdi, A.;Ouni, B.;Amlouk, A.;Boubaker, K.;Amlouk, M.;
10:233:2 Effect of nickel doping on structural, optical, electrical and ethanol sensing properties of spray deposited nanostructured ZnO thin films
DOI:10.1016/j.ceramint.2013.12.150 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Muniyandi, Indumathy;Mani, Ganesh Kumar;Shankar, Prabakaran;Rayappan, John Bosco Balaguru;
10:233:3 Selective detection of ammonia using spray pyrolysis deposited pure and nickel doped ZnO thin films
DOI:10.1016/j.apsusc.2014.05.075 JN:APPLIED SURFACE SCIENCE PY:2014
TC:6 AU: Mani, Ganesh Kumar;Rayappan, John Bosco Balaguru;
10:233:4 Physical properties of spray deposited Ni-doped zinc oxide thin films
DOI:10.1016/j.ceramint.2012.10.234 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Patil, S. K.;Shinde, S. S.;Rajpure, K. Y.;
10:233:5 Third-order nonlinear optical properties of Mn doped ZnO thin films under cw laser illumination
DOI:10.1016/j.optmat.2012.09.028 JN:OPTICAL MATERIALS PY:2013
TC:27 AU: Nagaraja, K. K.;Pramodini, S.;Kumar, A. Santhosh;Nagaraja, H. S.;Poornesh, P.;Kekuda, Dhananjaya;
10:233:6 Non-linear optical and electrical properties of ZnO doped Ni Thin Films obtained using spray ultrasonic technique
DOI:10.1016/j.optmat.2011.01.018 JN:OPTICAL MATERIALS PY:2011
TC:18 AU: Abed, S.;Aida, M. S.;Bouchouit, K.;Arbaoui, A.;Iliopoulos, K.;Sahraoui, B.;
10:233:7 Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer
DOI:10.1016/j.matchemphys.2012.10.023 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:10 AU: Bouaoud, A.;Rmili, A.;Ouachtari, E.;Louardi, A.;Chtouki, T.;Elidrissi, B.;Erguig, H.;
10:233:8 Influence of copper doping on structural, optical and sensing properties of spray deposited zinc oxide thin films
DOI:10.1016/j.jallcom.2013.07.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:11 AU: Mani, Ganesh Kumar;Rayappan, John Bosco Balaguru;
10:233:9 Linear and nonlinear optical properties of nanostructured Zn-(1_(x))SrxO-PVA composite thin films
DOI:10.1016/j.optmat.2014.04.036 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Tamgadge, Y. S.;Sunatkari, A. L.;Talwatkar, S. S.;Pahurkar, V. G.;Muley, G. G.;
10:233:10 Investigation of Molybdenum Doped ZnO Thin Films Prepared by Spray Pyrolysis Technique
DOI:10.1080/00150193.2011.620898 JN:FERROELECTRICS PY:2011
TC:4 AU: Gokulakrishnan, V.;Parthiban, S.;Jeganathan, K.;Ramamurthi, K.;
10:233:11 Solvent volume driven ZnO nanopetals thin films: Spray pyrolysis
DOI:10.1016/j.matlet.2014.07.019 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Sivalingam, Kovalakannan;Shankar, Prabakaran;Mani, Ganesh Kumar;Rayappan, John Bosco Balaguru;
10:234:1 Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers
DOI:10.1063/1.4872175 JN:APPLIED PHYSICS LETTERS PY:2014
TC:6 AU: Lu, Hong-Liang;Yang, Ming;Xie, Zhang-Yi;Geng, Yang;Zhang, Yuan;Wang, Peng-Fei;Sun, Qing-Qing;Ding, Shi-Jin;Zhang, David Wei;
10:234:2 Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy
DOI:10.1063/1.4767524 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Singh, S. D.;Ajimsha, R. S.;Sahu, Vikas;Kumar, Ravi;Misra, P.;Phase, D. M.;Oak, S. M.;Kukreja, L. M.;Ganguli, Tapas;Deb, S. K.;
10:234:3 Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure
DOI:10.1063/1.3385384 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:30 AU: You, J. B.;Zhang, X. W.;Zhang, S. G.;Tan, H. R.;Ying, J.;Yin, Z. G.;Zhu, Q. S.;Chu, Paul K.;
10:234:4 Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system
DOI:10.1063/1.3698387 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Wu, Po-Ching;Lee, Hsin-Ying;Lee, Ching-Ting;
10:234:5 Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction
DOI:10.1063/1.4861117 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Singh, S. D.;Ganguli, Tapas;Ajimsha, R. S.;Misra, P.;Phase, D. M.;Kukreja, L. M.;Deb, S. K.;
10:234:6 Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures
DOI:10.1063/1.4730774 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:18 AU: Kukreja, L. M.;Misra, P.;Fallert, J.;Phase, D. M.;Kalt, H.;
10:234:7 Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition
DOI:10.1016/j.jallcom.2014.08.042 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Singh, S. D.;Ajimsha, R. S.;Mukherjee, C.;Kumar, Ravi;Kukreja, L. M.;Ganguli, Tapas;
10:234:8 Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer
DOI:10.1063/1.4768238 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Huang, Huihui;Fang, Guojia;Mo, Xiaoming;Long, Hao;Wang, Haoning;Li, Songzhan;Li, Yuan;Zhang, Yupeng;Pan, Chunxu;Carroll, David L.;
10:234:9 Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC
DOI:10.1063/1.4789380 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Zhang, Feng;Sun, Guosheng;Zheng, Liu;Liu, Shengbei;Liu, Bin;Dong, Lin;Wang, Lei;Zhao, Wanshun;Liu, Xingfang;Yan, Guoguo;Tian, Lixin;Zeng, Yiping;
10:234:10 Studies on highly resistive ZnO thin films grown by DC-discharge-assisted pulsed laser deposition
DOI:10.1007/s00339-013-7653-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Das, Amit K.;Misra, P.;Kumar, Ravi;Ganguli, Tapas;Singh, M. K.;Phase, D. M.;Kukreja, L. M.;
10:234:11 Experimental determination of valence band offset at PbTe/Ge(100) interface by synchrotron radiation photoelectron spectroscopy
DOI:10.1016/j.apsusc.2010.03.119 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Cai, C. F.;Wu, H. Z.;Si, J. X.;Zhang, W. H.;Xu, Y.;Zhu, J. F.;
10:235:1 Ascorbate-Assisted Growth of Hierarchical ZnO Nanostructures: Sphere, Spindle, and Flower and Their Catalytic Properties
DOI:10.1021/la904507q JN:LANGMUIR PY:2010
TC:96 AU: Raula, Manoj;Rashid, Md. Harunar;Paira, Tapas K.;Dinda, Enakshi;Mandal, Tarun K.;
10:235:2 Controllable Fabrication of Patterned ZnO Nanorod Arrays: Investigations into the Impacts on Their Morphology
DOI:10.1021/am3003473 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:21 AU: Zhang, Dian-bo;Wang, Shu-jie;Cheng, Ke;Dai, Shu-xi;Hu, Bin-bin;Han, Xiao;Shi, Qing;Du, Zu-liang;
10:235:3 Two-step synthesis of centipede-like Ag/ZnO nanoarchitectures with tunable optical property
DOI:10.1016/j.matlet.2014.03.175 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Hou, Xianming;
10:235:4 Morphological evolution of flower-like ZnO microstructures and their gas sensing properties
DOI:10.1016/j.ceramint.2013.04.039 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Gao, Xiaoqing;Zhao, Hua;Wang, Jide;Su, Xintai;Xiao, Feng;
10:235:5 Synthesis and characterization of ZnO-Ag core-shell nanocomposites with uniform thin silver layers
DOI:10.1016/j.apsusc.2010.03.123 JN:APPLIED SURFACE SCIENCE PY:2010
TC:25 AU: Li, Fei;Yuan, Yuliang;Luo, Junyang;Qin, Qinghua;Wu, Jianfang;Li, Zhen;Huang, Xintang;
10:235:6 Ultrathin and nanostructured ZnO-based films for fluorescence biosensing applications
DOI:10.1016/j.jcis.2011.09.014 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:9 AU: Satriano, Cristina;Fragala, Maria Elena;Aleeva, Yana;
10:235:7 Zinc oxide hollow micro spheres and nano rods: Synthesis and applications in gas sensor
DOI:10.1016/j.matchemphys.2014.04.033 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Jamil, Saba;Janjua, Muhammad Ramzan Saeed Ashraf;Ahmad, Tauqeer;Mehmood, Tahir;Ii, Songnan;Jing, Xiaoyan;
10:235:8 beta-Ag2S-ZnO as a novel sunshine photocatalyst for the effective degradation of RR 120 dye
DOI:10.1016/j.powtec.2013.03.002 JN:POWDER TECHNOLOGY PY:2013
TC:3 AU: Subash, B.;Krishnakumar, B.;Swaminathan, M.;Shanthi, M.;
10:235:9 3D flowerlike ZnO micro-nanostructures via site-specific second nucleation in the zinc-ethylenediamine-hexamethylenetetramine tertiary system
DOI:10.1016/j.mssp.2011.02.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Yang, Lejiao;Qiu, Deliang;Yu, Fei;Chen, Shougang;Yin, Yansheng;
10:235:10 Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays
DOI:10.1016/j.tsf.2010.04.005 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Fragala, Maria Elena;Satriano, Cristina;Aleeva, Yana;Malandrino, Graziella;
10:235:11 Enhanced Raman scattering and nonlinear conductivity in Ag-doped hollow ZnO microspheres
DOI:10.1007/s00339-012-7053-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:0 AU: Tringe, Joseph W.;Levie, Harold W.;McCall, Scott K.;Teslich, Nick E.;Wall, Mark A.;Orme, Christine A.;Matthews, Manyalibo J.;
10:235:12 ZnO nanosheet network formation by ZnTe oxidation in humid argon atmosphere annealing
DOI:10.1016/j.matlet.2012.05.016 JN:MATERIALS LETTERS PY:2012
TC:1 AU: de Melo, O.;Larramendi, S.;Contreras-Puente, G.;Behar, M.;Rodriguez-Lopez, S.;Trabada, D. G.;Hernandez-Velez, M.;
10:236:1 Template-free synthesis of zinc citrate yolk-shell microspheres and their transformation to ZnO yolk-shell nanospheres
DOI:10.1039/c2jm31243c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:22 AU: Xie, Qingshui;Li, Jiangong;Tian, Qiang;Shi, Rongrong;
10:236:2 Anisotropic photoelectric film assembled from mesoporous silica (MS)@CuO@FeS2 composite microspheres for improving photoelectric conversion
DOI:10.1016/j.jcis.2013.03.025 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:0 AU: Zong, Jie;Zhu, Yihua;Shen, Jianhua;Yang, Xiaoling;Li, Chunzhong;
10:236:3 Exposed Crystal Face Controlled Synthesis of 3D ZnO Superstructures
DOI:10.1021/la102126m JN:LANGMUIR PY:2010
TC:52 AU: Cho, Seungho;Jang, Ji-Wook;Lee, Jae Sung;Lee, Kun-Hong;
10:236:4 Confined growth of CuO, NiO, and Co3O4 nanocrystals in mesoporous silica (MS) spheres
DOI:10.1016/j.jallcom.2010.11.175 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Zong, Jie;Zhu, Yihua;Yang, Xiaoling;Li, Chunzhong;
10:236:5 Facile Solvothermal Synthesis of BiOCl/ZnO Heterostructures with Enhanced Photocatalytic Activity
DOI:10.1155/2014/347061 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Li, Yong-Fang;Zhang, Ming;Guo, Dan-Lu;He, Fei-Xia;Li, Ying-Zhu;Wang, Ai-Jun;
10:236:6 Control growth of single crystalline ZnO nanorod arrays and nanoflowers with enhanced photocatalytic activity
DOI:10.1007/s11051-013-1565-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Feng, Jiu-Ju;Wang, Zhen-Zhen;Li, Yong-Fang;Chen, Jian-Rong;Wang, Ai-Jun;
10:236:7 Gallium ion-assisted room temperature synthesis of small-diameter ZnO nanorods
DOI:10.1016/j.jcis.2011.06.004 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:6 AU: Cho, Seungho;Kim, Semi;Lee, Kun-Hong;
10:236:8 Tunable, Flexible Antireflection Layer of ZnO Nanowires Embedded in PDMS
DOI:10.1021/la9043599 JN:LANGMUIR PY:2010
TC:16 AU: Kim, Min Kyu;Yi, Dong Kee;Paik, Ungyu;
10:236:9 SBA-15-Supported Mixed-Metal Oxides: Partial Hydrolytic Sol-Gel Synthesis, Adsorption, and Structural Properties
DOI:10.1021/am900625c JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:9 AU: Fulvio, Pasquale F.;Pikus, Stanislaw;Jaroniec, Mietek;
10:236:10 Synthesis and characterization of micrometer Cu/PVP architectures
DOI:10.1016/j.materresbull.2011.04.022 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:0 AU: Luo, Huajuan;Zhao, Yanbao;Sun, Lei;
10:236:11 Effect of Ag film thickness on the crystallization mechanism and photoluminescence properties of ZnO/Ag nanoflower arrays
DOI:10.1016/j.apsusc.2012.04.170 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Hu, Zhan-Shuo;Hung, Fei-Yi;Chang, Shoou-Jinn;Huang, Bohr-Ran;Lin, Bo-Cheng;Hsieh, Wei-Kang;Chen, Kuan-Jen;
10:236:12 A simple method for preparation of superparamagnetic porous silica
DOI:10.1016/j.jallcom.2009.12.114 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:3 AU: Wang, Chao;Ao, Yanhui;Wang, Peifang;Qian, Jin;Hou, Jun;Zhang, Songhe;
10:237:1 Synthesis of self-assembled 3D hollow microspheres of SnO2 with an enhanced gas sensing performance
DOI:10.1016/j.apsusc.2013.07.010 JN:APPLIED SURFACE SCIENCE PY:2013
TC:11 AU: Li, Yangen;Qiao, Liang;Wang, Lili;Zeng, Yi;Fu, Wuyou;Yang, Haibin;
10:237:2 A study of hydrogen sensing properties and microstructure for highly dispersed Pd SnO2 thin films with high response magnitude
DOI:10.1016/j.apsusc.2014.05.003 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Yang, Liu;Yin, Chenbo;Zhang, Zili;Zhu, Bin;
10:237:3 Enhancement of Hydrogen Gas Sensing of Nanocrystalline Nickel Oxide by Pulsed-Laser Irradiation
DOI:10.1021/am301024a JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:15 AU: Soleimanpour, A. M.;Khare, Sanjay V.;Jayatissa, Ahalapitiya H.;
10:237:4 Structural, optical and electrical studies on Mg-doped NiO thin films for sensitivity applications
DOI:10.1016/j.mssp.2014.08.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Ben Amor, M.;Boukhachem, A.;Boubaker, K.;Amlouk, M.;
10:237:5 The effect of UV irradiation on nanocrysatlline zinc oxide thin films related to gas sensing characteristics
DOI:10.1016/j.apsusc.2010.11.022 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Soleimanpour, A. M.;Hou, Yue;Jayatissa, Ahalapitiya H.;
10:237:6 Synthesis and gas sensing characteristic based on metal oxide modification multi wall carbon nanotube composites
DOI:10.1016/j.apsusc.2011.05.081 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Liu, Hongzhong;Ma, Hui;Zhou, Weiman;Liu, Weihua;Jie, Zheng;Li, Xin;
10:237:7 LPG sensing characteristics of electrospray deposited SnO2 nanoparticles
DOI:10.1016/j.apsusc.2014.09.185 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Gurbuz, Mevlut;Gunkaya, Goktug;Dogan, Aydin;
10:237:8 Effect of laser irradiation on gas sensing properties of sol-gel derived nanocrystalline Al-doped ZnO thin films
DOI:10.1016/j.tsf.2014.03.089 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Hou, Yue;Jayatissa, Ahalapitiya H.;
10:237:9 Characterizing individual SnO2 nanobelt field-effect transistors and their intrinsic responses to hydrogen and ambient gases
DOI:10.1016/j.matchemphys.2012.09.037 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:8 AU: Cheng, Yi;Yang, Rusen;Zheng, Jian-Ping;Wang, Zhong Lin;Xiong, Peng;
10:237:10 Surface and gas sensing properties of nanocrystalline nickel oxide thin films
DOI:10.1016/j.apsusc.2013.03.085 JN:APPLIED SURFACE SCIENCE PY:2013
TC:12 AU: Soleimanpour, Amir M.;Jayatissa, Ahalapitiya H.;Sumanasekera, Gamini;
10:237:11 Field Emission Properties of the Dendritic Carbon Nanotubes Film Embedded with ZnO Quantum Dots
DOI:10.1155/2011/382068 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:6 AU: Zuo, Shu;Li, Xin;Liu, Weihua;He, Yongning;Xiao, Zhihao;Zhu, Changchun;
10:237:12 Preparation of SnO2 thin films at low temperatures with H-2 gas by the hot-wire CVD method
DOI:10.1016/j.tsf.2011.01.309 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Natsuhara, H.;Tatsuyama, T.;Ushiro, M.;Furuhashi, M.;Fujii, T.;Ohashi, F.;Yoshida, N.;Nonomura, S.;
10:237:13 CO sensitivity of La2O3-doped SnO2 thick film gas sensor
DOI:10.1016/j.tsf.2013.02.039 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Choi, J. Y.;Oh, T. S.;
10:237:14 Crystallinity and morphology-controlled synthesis of SnO2 nanoparticles for higher gas sensitivity
DOI:10.1016/j.powtec.2013.04.019 JN:POWDER TECHNOLOGY PY:2013
TC:4 AU: Liu, Shimin;Li, Li;Jiang, Weiwei;Liu, Chaoqian;Ding, Wanyu;Chai, Weiping;
10:237:15 Synthesis, field emission and glucose-sensing characteristics of nanostructural ZnO on free-standing carbon nanotubes films
DOI:10.1016/j.apsusc.2009.11.011 JN:APPLIED SURFACE SCIENCE PY:2010
TC:1 AU: Bai, Dan;Zhang, Zhi;Yu, Ke;
10:238:1 Hydrothermal synthesis and optical property of scale- and spindle-like ZnO
DOI:10.1016/j.ceramint.2012.07.002 JN:CERAMICS INTERNATIONAL PY:2013
TC:21 AU: Kiomarsipour, Narges;Razavi, Reza Shoja;
10:238:2 Hydrothermal synthesis of ZnO nanopigments with high UV absorption and vis/NIR reflectance
DOI:10.1016/j.ceramint.2014.03.178 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Kiomarsipour, Narges;Razavi, Reza Shoja;
10:238:3 Low temperature synthesis of fluorescent ZnO nanoparticles
DOI:10.1016/j.apsusc.2010.09.011 JN:APPLIED SURFACE SCIENCE PY:2010
TC:33 AU: Khan, Yaqoob;Durrani, S. K.;Mehmood, Mazhar;Ahmad, Jamil;Khan, M. Riaz;Firdous, Shamraz;
10:238:4 Synthesis, morphology and growth mechanism of brush-like ZnO nanostructures
DOI:10.1016/j.apsusc.2010.09.056 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Wang, Jie;Zhuang, Huizhao;Li, Junlin;Xu, Peng;
10:238:5 Evaluation of shape and size effects on optical properties of ZnO pigment
DOI:10.1016/j.apsusc.2012.11.167 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Kiomarsipour, Narges;Razavi, Reza Shoja;Ghani, Kamal;Kioumarsipour, Marjan;
10:238:6 Synthesis of ZnO microstructures in glycerol/water solution
DOI:10.1016/j.ceramint.2013.05.114 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Dong, Xiaobin;Zhang, Aiyu;Yang, Ping;
10:238:7 Synthesis and gas sensor properties of flower-like 3D ZnO microstructures
DOI:10.1016/j.mseb.2011.01.019 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:15 AU: Zhao, Hua;Su, Xintai;Xiao, Feng;Wang, Jide;Jian, Jikang;
10:238:8 Synthesis of ZnO compound nanostructures via a chemical route for photovoltaic applications
DOI:10.1016/j.apsusc.2010.05.092 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Zhu, Y. F.;Shen, W. Z.;
10:238:9 Catalyst-free synthesis of novel brush-shaped ZnO particles by a simple oxidation in air
DOI:10.1016/j.apsusc.2009.11.036 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Lee, Geun-Hyoung;Song, Jeong-Hwan;
10:238:10 Photoelectrochemical performance of ZnO thin film anodes prepared by solution method
DOI:10.1016/j.ijhydene.2014.07.010 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:0 AU: Dang-Thanh Nguyen;Shin, Eui-Chol;Cho, Dong-Chun;Chae, Ki-Woong;Lee, Jong-Sook;
10:238:11 The sintering characteristics of pure tetrapod ZnO nanopowders prepared by thermal evaporation deposition (TED)
DOI:10.1016/j.ceramint.2011.06.002 JN:CERAMICS INTERNATIONAL PY:2011
TC:5 AU: Wu, Jun;Li, Taotao;Wang, Chao;Zhu, Bailin;Wu, Run;Xie, Changsheng;
10:238:12 Chestnut Bur-Like ZnO Crystals Synthesized by Solar Thermal Evaporation Technique
DOI:10.2320/matertrans.M2012091 JN:MATERIALS TRANSACTIONS PY:2012
TC:0 AU: Kim, Min-Sung;Lee, Geun-Hyoung;
10:239:1 Oriented growth of ZnO nanostructures on different substrates via a hydrothermal method
DOI:10.1016/j.jallcom.2009.08.159 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:30 AU: Yang, Jinghai;Zheng, Jiahong;Zhai, Hongju;Yang, Xiangmin;Yang, Lili;Liu, Yang;Lang, Jihui;Gao, Ming;
10:239:2 Antibacterial and photocatalytic properties of Ag/TiO2/ZnO nano-flowers prepared by facile one-pot hydrothermal process
DOI:10.1016/j.ceramint.2012.07.097 JN:CERAMICS INTERNATIONAL PY:2013
TC:19 AU: Pant, Hem Raj;Pant, Bishweshwar;Sharma, Ram Kumar;Amarjargal, Altangerel;Kim, Han Joo;Park, Chan Hee;Tijing, Leonard D.;Kim, Cheol Sang;
10:239:3 Synthesis, characterization, and photocatalytic properties of ZnO nano-flower containing TiO2 NPs
DOI:10.1016/j.ceramint.2011.11.071 JN:CERAMICS INTERNATIONAL PY:2012
TC:22 AU: Pant, Hem Raj;Park, Chan Hee;Pant, Bishweshwar;Tijing, Leonard D.;Kim, Hak Yong;Kim, Cheol Sang;
10:239:4 Carbon nanofibers decorated with binary semiconductor (TiO2/ZnO) nanocomposites for the effective removal of organic pollutants and the enhancement of antibacterial activities
DOI:10.1016/j.ceramint.2013.02.041 JN:CERAMICS INTERNATIONAL PY:2013
TC:19 AU: Pant, Bishweshwar;Pant, Hem Raj;Barakat, Nasser A. M.;Park, Mira;Jeon, Kyungsoo;Choi, Yuri;Kim, Hak-Yong;
10:239:5 ZnO micro-flowers assembled on reduced graphene sheets with high photocatalytic activity for removal of pollutants
DOI:10.1016/j.powtec.2012.11.050 JN:POWDER TECHNOLOGY PY:2013
TC:23 AU: Pant, Hem Raj;Park, Chan Hee;Pokharel, Pashupati;Tijing, Leonard D.;Lee, Dai Soo;Kim, Cheol Sang;
10:239:6 Synthesis and photocatalytic activities of CdS/TiO2 nanoparticles supported on carbon nanofibers for high efficient adsorption and simultaneous decomposition of organic dyes
DOI:10.1016/j.jcis.2014.07.039 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:8 AU: Pant, Bishweshwar;Barakat, Nasser A. M.;Pant, Hem Raj;Park, Mira;Saud, Prem Singh;Kim, Jong-Wan;Kim, Hak-Yong;
10:239:7 Sol-gel synthesis of novel cobalt doped zinc tin oxide composite for photocatalytic application
DOI:10.1016/j.ceramint.2014.01.004 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Bu, Ian Yi-Yu;
10:239:8 Incorporation of cadmium sulfide nanoparticles on the cadmium titanate nanofibers for enhanced organic dye degradation and hydrogen release
DOI:10.1016/j.ceramint.2013.07.042 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Pant, Bishweshwar;Pant, Hem Raj;Barakat, Nasser A. M.;Park, Mira;Han, Tae-Hwan;Lim, Baek Ho;Kim, Hak-Yong;
10:239:9 Silver nanoparticles in combination with acetic acid and zinc oxide quantum dots for antibacterial activities improvement-A comparative study
DOI:10.1016/j.apsusc.2014.05.132 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Sedira, Sofiane;Ayachi, Ahmed Abdelhakim;Lakehal, Sihem;Fateh, Merouane;Achour, Slimane;
10:239:10 Excellent humidity sensing properties of cadmium titanate nanofibers
DOI:10.1016/j.ceramint.2012.06.048 JN:CERAMICS INTERNATIONAL PY:2013
TC:9 AU: Imran, Z.;Batool, S. S.;Jamil, H.;Usman, M.;Israr-Qadir, M.;Shah, S. H.;Jamil-Rana, S.;Rafiq, M. A.;Hasan, M. M.;Willander, M.;
10:239:11 TiOx/N-y nanowire arrays: NH3-assisted controllable vertical oriented growth and the electrophotochemical properties
DOI:10.1016/j.jallcom.2010.05.053 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:3 AU: Wang, Xin;Yang, Yu Lin;Fan, Ruiqing;Wang, Yonghui;Jiang, Zhao Hua;
10:239:12 Synthesis of High aspect ratio CdTiO3 nanofibers via electrospinning: characterization and photocatalytic activity
DOI:10.1016/j.ceramint.2013.06.018 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Hassan, M. Shamshi;Amna, Touseef;Khil, Myung-Seob;
10:240:1 Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations
DOI:10.1103/PhysRevB.83.045206 JN:PHYSICAL REVIEW B PY:2011
TC:38 AU: Vidya, R.;Ravindran, P.;Fjellvag, H.;Svensson, B. G.;Monakhov, E.;Ganchenkova, M.;Nieminen, R. M.;
10:240:2 Origin of green emission and charge trapping dynamics in ZnO nanowires
DOI:10.1103/PhysRevB.87.115309 JN:PHYSICAL REVIEW B PY:2013
TC:10 AU: Li, Mingjie;Xing, Guichuan;Xing, Guozhong;Wu, Bo;Wu, Tom;Zhang, Xinhai;Sum, Tze Chien;
10:240:3 Effects of Interface States on Photoexcited Carriers in ZnO/Zn2SnO4 Type-II Radial Heterostructure Nanowires
DOI:10.1021/am405569k JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Cheng, Baochang;Wu, Guohong;Ouyang, Zhiyong;Su, Xiaohui;Xiao, Yanhe;Lei, Shuijin;
10:240:4 Energy-Transfer Efficiency in Eu-Doped ZnO Thin Films: The Effects of Oxidative Annealing on the Dynamics and the Intermediate Defect States
DOI:10.1021/am404662k JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Ahmed, Samah M.;Szymanski, Paul;El-Nadi, Lotfia M.;El-Sayed, Mostafa A.;
10:240:5 Power- and energy-dependent photoluminescence of Eu3+ incorporated and segregated ZnO polycrystalline nanobelts synthesized by a facile combustion method followed by heat treatment
DOI:10.1039/c0jm00804d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:16 AU: Cheng, Baochang;Zhang, Zhaodong;Liu, Hongjuan;Han, Zhihui;Xiao, Yanhe;Lei, Shuijin;
10:240:6 Strong luminescence and efficient energy transfer in Eu3+/Tb3+-codoped ZnO nanocrystals
DOI:10.1016/j.optmat.2014.07.008 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Luo, L.;Huang, F. Y.;Dong, G. S.;Fan, H. H.;Li, K. F.;Cheah, K. W.;Chen, J.;
10:240:7 Defect spectroscopy of single ZnO microwires
DOI:10.1063/1.4869555 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Villafuerte, M.;Ferreyra, J. M.;Zapata, C.;Barzola-Quiquia, J.;Iikawa, F.;Esquinazi, P.;Heluani, S. P.;de Lima, M. M., Jr.;Cantarero, A.;
10:240:8 Quantifying Bulk and Surface Recombination Processes in Nanostructured Water Splitting Photocatalysts via In Situ Ultrafast Spectroscopy
DOI:10.1021/nl504035j JN:NANO LETTERS PY:2015
TC:1 AU: Appavoo, Kannatassen;Liu, Mingzhao;Black, Charles T.;Sfeir, Matthew Y.;
10:240:9 Role of size and defects in ultrafast broadband emission dynamics of ZnO nanostructures
DOI:10.1063/1.4868534 JN:APPLIED PHYSICS LETTERS PY:2014
TC:4 AU: Appavoo, Kannatassen;Liu, Mingzhao;Sfeir, Matthew Y.;
10:241:1 Low Temperature Atomic Layer Deposition of Tin Oxide
DOI:10.1021/cm1011108 JN:CHEMISTRY OF MATERIALS PY:2010
TC:45 AU: Heo, Jaeyeong;Hock, Adam S.;Gordon, Roy G.;
10:241:2 Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
DOI:10.1021/cm503112v JN:CHEMISTRY OF MATERIALS PY:2014
TC:1 AU: Han, Jeong Hwan;Chung, Yoon Jang;Park, Bo Keun;Kim, Seong Keun;Kim, Hyo-Suk;Kim, Chang Gyoun;Chung, Taek-Mo;
10:241:3 Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas
DOI:10.1039/c2jm16557k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:13 AU: Heo, Jaeyeong;Kim, Sang Bok;Gordon, Roy G.;
10:241:4 Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water
DOI:10.1116/1.4812717 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:13 AU: Mullings, Marja N.;Haegglund, Carl;Bent, Stacey F.;
10:241:5 The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics
DOI:10.1016/j.apsusc.2014.06.027 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Choi, Dong-won;Maeng, W. J.;Park, Jin-Seong;
10:241:6 SnO2 thin films grown by atomic layer deposition using a novel Sn precursor
DOI:10.1016/j.apsusc.2014.09.054 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Choi, Min-Jung;Cho, Cheol Jin;Kim, Kwang-Chon;Pyeon, Jung Joon;Park, Hyung-Ho;Kim, Hyo-Suk;Han, Jeong Hwan;Kim, Chang Gyoun;Chung, Taek-Mo;Park, Tae Joo;Kwon, Beomjin;Jeong, Doo Seok;Baek, Seung-Hyub;Kang, Chong-Yun;Kim, Jin-Sang;Kim, Seong Keun;
10:241:7 Core-shell-structured nanothermites synthesized by atomic layer deposition
DOI:10.1007/s11051-013-2150-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:2 AU: Qin, Lijun;Gong, Ting;Hao, Haixia;Wang, Keyong;Feng, Hao;
10:241:8 Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone
DOI:10.1116/1.4837915 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:2 AU: Selvaraj, Sathees Kannan;Feinerman, Alan;Takoudis, Christos G.;
10:241:9 Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition
DOI:10.1016/j.materresbull.2012.04.120 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Lee, Byung Kook;Jung, Eunae;Kim, Seok Hwan;Moon, Dae Chul;Lee, Sun Sook;Park, Bo Keun;Hwang, Jin Ha;Chung, Taek-Mo;Kim, Chang Gyoun;An, Ki-Seok;
10:242:1 On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications
DOI:10.1063/1.3605589 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Lee, Sunghwan;Paine, David C.;
10:242:2 A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source-drain metallization
DOI:10.1063/1.3549810 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:25 AU: Lee, Sunghwan;Park, Hongsik;Paine, David C.;
10:242:3 Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation
DOI:10.1063/1.4790187 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Lee, Sunghwan;Paine, David C.;
10:242:4 Metallization strategies for In2O3-based amorphous oxide semiconductor materials
DOI:10.1557/jmr.2012.141 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:4 AU: Lee, Sunghwan;Park, Keunhan;Paine, David C.;
10:242:5 Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors
DOI:10.1016/j.tsf.2011.06.082 JN:THIN SOLID FILMS PY:2012
TC:13 AU: Lee, Sunghwan;Bierig, Brian;Paine, David C.;
10:242:6 The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In-Zn-O thin film transistors
DOI:10.1016/j.tsf.2011.11.067 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Lee, Sunghwan;Park, Hongsik;Paine, David C.;
10:242:7 Metallization selection and the performance of amorphous In-Zn-O thin film transistors
DOI:10.1063/1.4885118 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lee, Sunghwan;Paine, David C.;
10:242:8 Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors
DOI:10.1063/1.4894769 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Xu, Rui;He, Jian;Song, Yang;Li, Wei;Zaslavsky, A.;Paine, D. C.;
10:242:9 Structural and electrical properties of transparent conducting Al2O3-doped ZnO thin films using off-axis DC magnetron sputtering
DOI:10.1016/j.matlet.2012.06.094 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Lee, Sunghwan;Kim, Seung-Hyun;Kim, Youngha;Kingon, Angus I.;Paine, David C.;No, Kwangsoo;
10:242:10 Growth and properties of transparent conducting CuAlO2 single crystals by a flux self-removal method
DOI:10.1016/j.jcrysgro.2012.12.134 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Yoon, J. S.;Nam, Y. S.;Baek, K. S.;Park, C. W.;Ju, H. L.;Chang, S. K.;
10:243:1 Hydrothermal synthesis of SnO2 nanocorals, nanofragments and nanograss and their formaldehyde gas-sensing properties
DOI:10.1016/j.mssp.2013.04.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Wu, Mingyu;Zeng, Wen;He, Qiongyao;Zhang, Jianyue;
10:243:2 Hydrothermal Synthesis and Hydrogen Sensing Properties of Nanostructured SnO2 with Different Morphologies
DOI:10.1155/2014/291273 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Chen, Weigen;Gan, Hongli;Zhang, Wei;Mao, Zeyu;
10:243:3 Synthesis of porous SnO2 nanospheres and their application for lithium-ion battery
DOI:10.1016/j.matlet.2011.11.036 JN:MATERIALS LETTERS PY:2012
TC:23 AU: Wen, Zhigang;Zheng, Feng;Liu, Kanglian;
10:243:4 Synthesis, characterization and alcohol sensing property of Zn-doped SnO2 nanoparticles
DOI:10.1016/j.ceramint.2011.10.081 JN:CERAMICS INTERNATIONAL PY:2012
TC:20 AU: Mishra, R. K.;Sahay, P. P.;
10:243:5 Synthesis of flower-like SnO2 single crystals and its enhanced photocatalytic activity
DOI:10.1016/j.apsusc.2012.02.065 JN:APPLIED SURFACE SCIENCE PY:2012
TC:13 AU: Dai, Shudong;Yao, Zhongliang;
10:243:6 High-yield synthesis of SnO2 nanobelts by water-assisted chemical vapor deposition for sensor applications
DOI:10.1016/j.materresbull.2012.07.023 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Zhang, Jing Bo;Li, Xiao Ning;Bai, Shou Li;Luo, Rui Xian;Chen, Ai Fan;Lin, Yuan;
10:243:7 Synthesis of hollow SnO2 microspheres and its enhanced photocatalytic properties
DOI:10.1016/j.matlet.2014.09.028 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Wang, Yanzhong;Su, Tingting;Chen, Huiyu;Liu, Wei;Dong, Yingge;Hu, Shengliang;
10:243:8 Cactus-Like SnO2 Nanostructures Grown by Thermal Evaporation Technique
DOI:10.2320/matertrans.M2013240 JN:MATERIALS TRANSACTIONS PY:2013
TC:0 AU: Lee, Geun-Hyoung;
10:243:9 Giant enhancement of H2S gas response by decorating n-type SnO2 nanowires with p-type NiO nanoparticles
DOI:10.1063/1.4772488 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Nguyen Van Hieu;Phung Thi Hong Van;Le Tien Nhan;Nguyen Van Duy;Nguyen Duc Hoa;
10:243:10 Highly sensitive H2S gas sensors based on CuO-coated ZnSnO3 nanorods synthesized by thermal evaporation
DOI:10.1016/j.ceramint.2012.04.050 JN:CERAMICS INTERNATIONAL PY:2012
TC:10 AU: Jin, Changhyun;Kim, Hyunsu;An, Soyeon;Lee, Chongmu;
10:243:11 The synthesis and photocatalytic properties of epitaxial SnO2-ZnS nanocomb heterostructure
DOI:10.1016/j.matlet.2010.08.057 JN:MATERIALS LETTERS PY:2010
TC:2 AU: Ling, Shiting;She, Guangwei;Li, Fuqiang;Shi, Wensheng;Meng, Xiangmin;
10:243:12 Porous sheet-like and sphere-like nano-architectures of SnO2 nanoparticles via a solvent-thermal approach and their gas-sensing performances
DOI:10.1016/j.mseb.2013.06.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:1 AU: Liu, Jie;Tang, Xin-Cun;Xiao, Yuan-Hua;Jia, Hai;Gong, Mei-Li;Huang, Fu-Qin;
10:243:13 Size, morphology and optical properties of SnO2 nanoparticles synthesized by facile surfactant-assisted solvothermal processing
DOI:10.1016/j.mssp.2012.01.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:10 AU: Rajendran, V.;Anandan, K.;
10:243:14 Preparation and gas sensitivity of WO3 hollow microspheres and SnO2 doped heterojunction sensors
DOI:10.1016/j.mssp.2013.05.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Gui, Yanghai;Dong, Fanghong;Zhang, Yonghui;Zhang, Yong;Tian, Junfeng;
10:243:15 Fast response detection of H2S by CuO-doped SnO2 films prepared by electrodeposition and oxidization at low temperature
DOI:10.1016/j.matchemphys.2011.09.023 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:11 AU: Wang, Shulan;Xiao, Yang;Shi, Dongqi;Liu, Hua Kun;Dou, Shi Xue;
10:244:1 A Facile Integration of Zero- (I-III-VI Quantum Dots) and One-(Single SnO2 Nanowire) Dimensional Nanomaterials: Fabrication of a Nanocomposite Photodetector with Ultrahigh Gain and Wide Spectral Response
DOI:10.1021/nl3041367 JN:NANO LETTERS PY:2013
TC:11 AU: Lu, Meng-Lin;Lai, Chih-Wei;Pan, Hsing-Ju;Chen, Chung-Tse;Chou, Pi-Tai;Chen, Yang-Fang;
10:244:2 Diameter-Engineered SnO2 Nanowires over Contact-Printed Gold Nanodots Using Size-Controlled Carbon Nanopost Array Stamps
DOI:10.1021/nn100197u JN:ACS NANO PY:2010
TC:32 AU: Lee, Sang Ho;Jo, Gunho;Park, Woojin;Lee, Seungkyo;Kim, Youn-Su;Cho, Beong Ki;Lee, Takhee;Kim, Won Bae;
10:244:3 Tin-Oxide-Nanowire-Based Electronic Nose Using Heterogeneous Catalysis as a Functionalization Strategy
DOI:10.1021/nn100394a JN:ACS NANO PY:2010
TC:36 AU: Baik, Jeong Min;Zielke, Mark;Kim, Myung Hwa;Turner, Kimberly L.;Wodtke, Alec M.;Moskovits, Martin;
10:244:4 Single-Nanobelt Electronic Nose: Engineering and Tests of the Simplest Analytical Element
DOI:10.1021/nn100435h JN:ACS NANO PY:2010
TC:24 AU: Sysoev, Victor V.;Strelcov, Evghenii;Sommer, Martin;Bruns, Michael;Kiselev, Ilia;Habicht, Wilhelm;Kar, Swastik;Gregoratti, Luca;Kiskinova, Maya;Kolmakov, Andrei;
10:244:5 Photoinduced Electron Transfer in Dye-Sensitized SnO2 Nanowire Field-Effect Transistors
DOI:10.1002/adfm.201001521 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:11 AU: Wu, Hsing-Chen;Huang, Yuan-Chang;Ding, I-Kang;Chen, Chun-Cing;Yang, Yi-Han;Tsai, Chia-Chang;Chen, Chii-Dong;Chen, Yit-Tsong;
10:244:6 Gate-Tunable Surface Processes on a Single-Nanowire Field-Effect Transistor
DOI:10.1002/adma.201004203 JN:ADVANCED MATERIALS PY:2011
TC:17 AU: Mubeen, Syed;Moskovits, Martin;
10:244:7 Enhanced photocurrent gain and spectrum range based on the composite consisting of SnO2 nanowires and CdSe quantum dots
DOI:10.1063/1.3626588 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Lu, M. L.;Lin, C. H.;Chen, Y. F.;
10:244:8 Fabrication of an efficient GLAD-assisted p-NiO nanorod/n-ZnO thin film heterojunction UV photodiode
DOI:10.1039/c3tc32030h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Tyagi, Manisha;Tomar, Monika;Gupta, Vinay;
10:244:9 Hydrogen Sensing under Ambient Conditions Using SnO2 Nanowires: Synergetic Effect of Pd/Sn Codeposition
DOI:10.1021/nl402998g JN:NANO LETTERS PY:2013
TC:8 AU: Jeong, Seung Ho;Kim, Sol;Cha, Junho;Son, Min Soo;Park, Sang Han;Kim, Ha-Yeong;Cho, Man Ho;Whangbo, Myung-Hwan;Yoo, Kyung-Hwa;Kim, Sung-Jin;
10:244:10 The electrical characterization of a multi-electrode odor detection sensor array based on the single SnO2 nanowire
DOI:10.1016/j.tsf.2011.04.179 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Sysoev, V. V.;Strelcov, E.;Kar, S.;Kolmakov, A.;
10:245:1 High efficient ZnO nanowalnuts photocatalyst: A case study
DOI:10.1016/j.materresbull.2014.06.026 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Yan, Feng;Zhang, Siwen;Liu, Yang;Liu, Hongfeng;Qu, Fengyu;Cai, Xue;Wu, Xiang;
10:245:2 Aqueous phase approach to ZnO microspindles at low temperature
DOI:10.1016/j.jallcom.2010.04.110 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:24 AU: Gong, Lihong;Wu, Xiang;Ye, Cai;Qu, Fengyu;An, Maozhong;
10:245:3 Facile hydrothermal synthesis of novel ZnO nanocubes
DOI:10.1016/j.jallcom.2010.05.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:32 AU: Yu, Lijie;Qu, Fengyu;Wu, Xiang;
10:245:4 Solution synthesis and optimization of ZnO nanowindmills
DOI:10.1016/j.apsusc.2011.02.130 JN:APPLIED SURFACE SCIENCE PY:2011
TC:20 AU: Yu, Lijie;Qu, Fengyu;Wu, Xiang;
10:245:5 Growth of Thin Sheet Assembled Hierarchical ZnO Nanostructures
DOI:10.1155/2012/796815 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Jia, Boxiang;Jia, Weina;Wang, Jing;Qu, Fengyu;Wu, Xiang;
10:245:6 Facile Hydrothermal Approach to ZnO Nanorods at Mild Temperature
DOI:10.1155/2013/690639 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Jiao, Yang;Liu, Yang;Yin, Bosi;Zhang, Siwen;Qu, Fengyu;Wu, Xiaodan;Wu, Xiang;
10:245:7 Facile Synthesis of Template-Induced SnO2 Nanotubes
DOI:10.1155/2013/610964 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Liu, Yang;Jiao, Yang;Qu, Fengyu;Gong, Lihong;Wu, Xiang;
10:245:8 Methanol-Sensing Property Improvement of Mesostructured Zinc Oxide Prepared by the Nanocasting Strategy
DOI:10.1155/2013/263852 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Gao, Qian;Zheng, Wei-Tao;Wei, Cun-Di;Lin, Hui-Ming;
10:245:9 Synthesis of Vertically Aligned Dense ZnO Nanowires
DOI:10.1155/2011/428172 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:6 AU: Gong, Lihong;Wu, Xiang;Chen, Huibo;Qu, Fengyu;An, Maozhong;
10:245:10 Gas Phase Growth of Wurtzite ZnS Nanobelts on a Large Scale
DOI:10.1155/2013/596313 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Wang, Jing;Jiao, Yang;Liu, Yang;Zhang, Zhenglin;Qu, Fengyu;Wu, Xiang;
10:245:11 Hydrothermal synthesis of coral-like Au/ZnO catalyst and photocatalytic degradation of Orange II dye
DOI:10.1016/j.materresbull.2013.02.062 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:6 AU: Chen, P. K.;Lee, G. J.;Davies, S. H.;Masten, S. J.;Amutha, R.;Wu, J. J.;
10:245:12 Ferromagnetism induced by oxygen related defects in CeO2 from first principles study
DOI:10.1016/j.commatsci.2013.12.051 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:3 AU: El Hachimi, A. G.;Zaari, H.;Boujnah, M.;Benyoussef, A.;El Yadari, M.;El Kenz, A.;
10:246:1 Study of oxygen vacancies' influence on the lattice parameter in ZnO thin film
DOI:10.1016/j.matlet.2012.06.107 JN:MATERIALS LETTERS PY:2012
TC:28 AU: Li, Xinyi;Wang, Yunlan;Liu, Weifeng;Jiang, Guoshun;Zhu, Changfei;
10:246:2 Structural, optical, and ferroelectric behavior of Zn1-xLixO (0 <= x <= 0.09) nanostructures
DOI:10.1016/j.jallcom.2013.09.160 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Chand, Prakash;Gaur, Anurag;Kumar, Ashavani;
10:246:3 Nanostructuration and band gap emission enhancement of ZnO film via electrochemical anodization
DOI:10.1016/j.tsf.2014.10.061 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Achour, A.;Soussou, M. A.;Aissa, K. Ait;Islam, M.;Barreau, N.;Faulques, E.;Le Brizoual, L.;Djouadi, M. A.;Boujtita, M.;
10:246:4 Structural, morphological and optical study of Li doped ZnO thin films on Si (100) substrate deposited by pulsed laser deposition
DOI:10.1016/j.ceramint.2014.04.027 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Chand, Prakash;Gaur, Anurag;Kumar, Ashavani;Gaur, Umesh Kumar;
10:246:5 Enhancement of near-band edge photoluminescence of ZnO film buffered with TiN
DOI:10.1016/j.tsf.2012.11.117 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Achour, A.;Aissa, K. Ait;Mbarek, M.;El Hadj, K.;Ouldhamadouche, N.;Barreau, N.;Le Brizoual, L.;Djouadi, M. A.;
10:246:6 An Almost Transparent Image Pixel with a Pentacene/ZnO Photodiode, a Pentacene Thin-Film Transistor, and a 6,13-Pentacenequinone Phosphor Layer
DOI:10.1002/adma.201003646 JN:ADVANCED MATERIALS PY:2011
TC:8 AU: Lee, Kwang H.;Lee, Hee Sung;Lee, Kimoon;Ha, Taewoo;Kim, Jae Hoon;Im, Seongil;
10:246:7 ZnO nanorods/plates on Si substrate grown by low-temperature hydrothermal reaction
DOI:10.1016/j.apsusc.2009.11.028 JN:APPLIED SURFACE SCIENCE PY:2010
TC:17 AU: Gao, S. Y.;Li, H. D.;Yuan, J. J.;Li, Y. A.;Yang, X. X.;Liu, J. W.;
10:246:8 Modified ZnO nanorod arrays with TiO2 nanoparticles insertion: Effect on growth and properties
DOI:10.1016/j.mssp.2014.08.031 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Abderrahmane, Berchi;Djamila, Abdi;Aicha, Medjahed;
10:246:9 Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
DOI:10.1063/1.4803080 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Macaluso, R.;Mosca, M.;Cali, C.;Di Franco, F.;Santamaria, M.;Di Quarto, F.;Reverchon, J. -L.;
10:246:10 One-dimensional ZnO nanostructured films: Effect of oxide nanoparticles
DOI:10.1016/j.matlet.2012.05.028 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Frade, T.;Melo Jorge, M. E.;Gomes, A.;
10:246:11 Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction
DOI:10.1016/j.apsusc.2012.05.004 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Shei, Shih-Chang;Lee, Pay-Yu;Chang, Shoou-Jinn;
10:246:12 Structural and photoluminescence characterization of vertically aligned multiwalled carbon nanotubes coated with ZnO by magnetron sputtering
DOI:10.1016/j.tsf.2011.10.069 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Ouldhamadouche, N.;Achour, A.;Musa, I.;Aissa, K. Ait;Massuyeau, F.;Jouan, P. Y.;Kechouane, M.;Le Brizoual, L.;Faulques, E.;Barreau, N.;Djouadi, M. A.;
10:247:1 Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of alpha-IGZO thin-film transistors
DOI:10.1016/j.jallcom.2013.12.115 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Wu, Jia-Ling;Lin, Han-Yu;Su, Bo-Yuan;Chen, Yu-Cheng;Chu, Sheng-Yuan;Liu, Ssu-Yin;Chang, Chia-Chiang;Wu, Chin-Jyi;
10:247:2 Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate
DOI:10.1016/j.apsusc.2011.04.070 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Zhang, Zhiyun;Bao, Chonggao;Ma, Shengqiang;Hou, Shuzeng;
10:247:3 Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics
DOI:10.1016/j.jallcom.2013.09.133 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Shin, Seung Wook;Kim, In Young;Kishor, G. V.;Yoo, Yeong Yung;Kim, Young Baek;Heo, Jae Yeong;Heo, Gi-Seok;Patil, P. S.;Kim, Jin Hyeok;Lee, Jeong Yong;
10:247:4 Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at a low growth temperature of 250 degrees C
DOI:10.1016/j.jcrysgro.2010.02.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Shin, Seung Wook;Sim, Kyu Ung;Pawar, S. M.;Moholkar, A. V.;Jung, In Ok;Yun, Jae Ho;Moon, Jong-Ha;Kim, Jin Hyeok;Lee, Jeong Yong;
10:247:5 Highly conductive and damp heat stable transparent ZnO based thin films for flexible electronics
DOI:10.1016/j.jallcom.2012.11.021 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Jung, Keun;Choi, Won-Kook;Chae, Keun Hwa;Song, Jong-Han;Yoon, Seok-Jin;Lee, Myung-Hyun;Choi, Ji-Won;
10:247:6 Transparent conducting Ga-doped ZnO thin films grown by reactive co-sputtering of Zn and GaAs
DOI:10.1016/j.tsf.2013.11.020 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Singh, Devendra;Singh, S.;Kumar, Uttam;Srinivasa, R. S.;Major, S. S.;
10:247:7 Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers
DOI:10.1016/j.apsusc.2012.01.109 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Shin, Seung Wook;Agawane, G. L.;Kim, In Young;Kwon, Ye Bin;Jung, In Ok;Gang, Myeng Gil;Moholkar, A. V.;Moon, Jong-Ha;Kim, Jin Hyeok;Lee, Jeong Yong;
10:247:8 Microstructure, optical and electrical properties of gallium-doped ZnO films prepared by sol-gel method
DOI:10.1016/j.jallcom.2013.03.288 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Li Qian;Li Xifeng;Zhang Jianhua;
10:247:9 Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates
DOI:10.1016/j.jcrysgro.2011.03.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Shin, Seung Wook;Kwon, Ye Bin;Moholkar, A. V.;Heo, Gi-Seok;Jung, In Ok;Moon, Jong-Ha;Kim, Jin Hyeok;Lee, Jeong Yong;
10:247:10 A study on the epitaxy nature and properties of 3 wt% Ga-doped epitaxial ZnO thin film on Al2O3 (0001) substrates
DOI:10.1016/j.jcrysgro.2011.03.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Shin, Seung Wook;Lee, Gyoung Hoon;Moholkar, A. V.;Moon, Jong-Ha;Heo, Gi-Seok;Kim, Tae-Won;Kim, Jin Hyeok;Lee, Jeong Yong;
10:247:11 Highly transparent and conductive Ga-doped ZnO films with good thermal stability prepared by dual-target reactive sputtering
DOI:10.1016/j.matlet.2014.09.052 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Wang, Gui-Gen;Zeng, Jie;Han, Jie-Cai;Wang, Li-Yi;
10:247:12 The effect of Mg0.1Zn0.9O layer thickness on optical band gap of ZnO/Mg0.1Zn0.9O nano-scale multilayer thin films prepared by pulsed laser deposition method
DOI:10.1016/j.tsf.2011.02.010 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Cho, Ja Young;Shin, Seung Wook;Bin Kwon, Ye;Lee, Hyun-Ki;Sim, Kyu Ung;Kim, Hong Seung;Moon, Jong-Ha;Kim, Jin Hyeok;
10:247:13 Thermal stability of conductive and transparent V-doped ZnO thin films
DOI:10.1016/j.tsf.2014.01.026 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Chiba, Hiroshi;Mori, Tatsuya;Okuda, Shuhei;Washio, OkudaKatsuyoshi;
10:248:1 Enhanced photovoltaic performance of inverted organic solar cells with In-doped ZnO as an electron extraction layer
DOI:10.1016/j.renene.2013.12.031 JN:RENEWABLE ENERGY PY:2014
TC:10 AU: Thambidurai, M.;Kim, Jun Young;Kang, Chan-mo;Muthukumarasamy, N.;Song, Hyung-Jun;Song, Jiyun;Ko, Youngjun;Velauthapillai, Dhayalan;Lee, Changhee;
10:248:2 Highly concentrated ZnO sol with ultra-strong green emission
DOI:10.1016/j.matlet.2013.08.035 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Efafi, B.;Ghamsari, M. Sasani;Aberoumand, M. A.;Ara, M. H. Majles;Rad, H. Hojati;
10:248:3 Comparative study of structural and optical properties of ZnO nanostructures prepared by three different aqueous solution methods
DOI:10.1016/j.matchemphys.2013.07.024 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Gomes, Maria de Andrade;Giroldo Valerio, Mario Ernesto;Queiruga Rey, Jose Fernando;Macedo, Zelia Soares;
10:248:4 Study of ZnO sol-gel films: Effect of annealing
DOI:10.1016/j.matlet.2010.02.033 JN:MATERIALS LETTERS PY:2010
TC:49 AU: Ivanova, T.;Harizanova, A.;Koutzarova, T.;Vertruyen, B.;
10:248:5 Controlling morphologies and growth mechanism of hexagonal prisms with planar and pyramid tips of ZnO microflowers by microwave radiation
DOI:10.1016/j.ceramint.2014.01.120 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Phuruangrat, Anukorn;Thongtem, Titipun;Thongtem, Somchai;
10:248:6 Characterization of nanostructured ZnO produced by microwave irradiation
DOI:10.1016/j.ceramint.2009.07.027 JN:CERAMICS INTERNATIONAL PY:2010
TC:22 AU: Thongtem, Titipun;Phuruangrat, Anukorn;Thongtem, Somchai;
10:248:7 Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness
DOI:10.1016/j.apsusc.2013.03.171 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Sun, Jingchang;Bian, Jiming;Chen, Liansong;Wang, Yuxin;Gong, Yu;Li, Yang;Liu, Kuichao;Chang, Cheng;Li, Ming;Du, Guotong;
10:248:8 The effect of various capping agents on the surface modifications of sol-gel synthesised ZnO nanoparticles
DOI:10.1016/j.jallcom.2012.06.032 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:18 AU: Chandrasekaran, P.;Viruthagiri, G.;Srinivasan, N.;
10:248:9 Blue green and UV emitting ZnO nanoparticles synthesized through a non-aqueous route
DOI:10.1016/j.optmat.2012.01.021 JN:OPTICAL MATERIALS PY:2012
TC:9 AU: Rajalakshmi, M.;Sohila, S.;Ramya, S.;Divakar, R.;Ghosh, Chanchal;Kalavathi, S.;
10:248:10 Morphology development of ZnO produced by sonothermal process
DOI:10.1016/j.ceramint.2011.02.019 JN:CERAMICS INTERNATIONAL PY:2011
TC:5 AU: Jattukul, Siriprapha;Thongtem, Somchai;Thongtem, Titipun;
10:248:11 Synthesis and characterization of wires-like ZnO structures grown on a graphite support by microwave irradiation
DOI:10.1016/j.jcrysgro.2015.06.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Mora-Hernandez, J. M.;Arce-Estrada, E. M.;Zarazua-Villalobos, L.;Estrada-Flores, M.;Medina-Flores, J.;Reza-San German, C.;
10:249:1 Determining magnetic nanoparticle size distributions from thermomagnetic measurements
DOI:10.1063/1.3441411 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: DiPietro, R. S.;Johnson, H. G.;Bennett, S. P.;Nummy, T. J.;Lewis, L. H.;Heiman, D.;
10:249:2 Selective response inversion to NO2 and acetic acid in ZnO and CdS nanocomposite gas sensor
DOI:10.1088/0957-4484/25/36/365502 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Calestani, D.;Villani, M.;Mosca, R.;Lazzarini, L.;Coppede, N.;Dhanabalan, S. C.;Zappettini, A.;
10:249:3 Aldehyde detection by ZnO tetrapod-based gas sensors
DOI:10.1039/c1jm12561c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:32 AU: Calestani, Davide;Mosca, Roberto;Zanichelli, Massimiliano;Villani, Marco;Zappettini, Andrea;
10:249:4 Composite multifunctional nanostructures based on ZnO tetrapods and superparamagnetic Fe3O4 nanoparticles
DOI:10.1088/0957-4484/24/13/135601 JN:NANOTECHNOLOGY PY:2013
TC:5 AU: Villani, M.;Rimoldi, T.;Calestani, D.;Lazzarini, L.;Chiesi, V.;Casoli, F.;Albertini, F.;Zappettini, A.;
10:249:5 Thermomagnetic determination of Fe3O4 magnetic nanoparticle diameters for biomedical applications
DOI:10.1016/j.jmmm.2011.04.013 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:10 AU: Plouffe, Brian D.;Nagesha, Dattatri K.;DiPietro, Robert S.;Sridhar, Srinvas;Heiman, Don;Murthy, Shashi K.;Lewis, Lewis H.;
10:249:6 Effect of Surface Etching on the Efficiency of ZnO-Based Dye-Sensitized Solar Cells
DOI:10.1021/la904238n JN:LANGMUIR PY:2010
TC:24 AU: Yan, Fengpo;Huang, Lihua;Zheng, Jinsheng;Huang, Jin;Lin, Zhang;Huang, Feng;Wei, Mingdeng;
10:249:7 Extended functionality of ZnO nanotetrapods by solution-based coupling with CdS nanoparticles
DOI:10.1039/c2jm16164h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:9 AU: Villani, Marco;Calestani, Davide;Lazzarini, Laura;Zanotti, Lucio;Mosca, Roberto;Zappettini, Andrea;
10:249:8 Comment on "Determining magnetic nanoparticle size distributions from thermomagnetic measurements" [Appl. Phys. Lett. 96, 222506 (2010)]
DOI:10.1063/1.3593497 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Tournus, Florent;Tamion, Alexandre;
10:249:9 Surface scattering dominated magnetotransport for improved quantitative estimation of particle size in Ag100-xCox nanogranular films
DOI:10.1016/j.jmmm.2014.06.067 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:4 AU: Kumar, Dinesh;Chaudhary, Sujeet;Pandya, Dinesh K.;
10:249:10 Evolution of particle size and interparticle magnetic interactions with thickness in co-sputtered Cu79Co21 nanogranular thin films
DOI:10.1063/1.4813138 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Kumar, Dinesh;Chaudhary, Sujeet;Pandya, Dinesh K.;
10:249:11 Response to "Comment on 'Determining magnetic nanoparticle size distributions from thermomagnetic measurements'" [Appl. Phys. Lett. 98, 216102 (2011)]
DOI:10.1063/1.3593498 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: DiPietro, R. S.;Johnson, H. G.;Bennett, S. P.;Nummy, T. J.;Lewis, L. H.;Heiman, D.;
10:249:12 Dye-sensitized solar cells based on nanoparticle-decorated ZnO/SnO2 core/shell nanoneedle arrays
DOI:10.1016/j.apsusc.2013.11.095 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Zhou, Yang;Xia, Chao;Hu, Xiaoyan;Huang, Wei;Aref, A. A.;Wang, Bixiao;Liu, Zhengjing;Sun, Yongming;Zhou, Wei;Tang, Yiwen;
10:249:13 Transition in spin dependent transport from superparamagnetic-superparamagnetic to superparamagnetic-ferromagnetic in sputtered Cu100-xCox granular films
DOI:10.1063/1.4761965 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Kumar, Dinesh;Chaudhary, Sujeet;Pandya, Dinesh K.;
10:249:14 Structural and magnetization studies on nanoparticles of Nd doped alpha-Fe2O3
DOI:10.1016/j.matchemphys.2012.02.041 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Goyal, Gaurav;Dogra, Anjana;Rayaprol, S.;Kaushik, S. D.;Siruguri, V.;Kishan, H.;
10:249:15 Microstructure and micromechanics of polydisperse granular materials: Effect of the shape of particle size distribution
DOI:10.1016/j.powtec.2014.08.020 JN:POWDER TECHNOLOGY PY:2014
TC:1 AU: Wiacek, Joanna;Molenda, Marek;
10:249:16 The effect of different random number distributions on the porosity of spherical particles
DOI:10.1016/j.apt.2012.01.006 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:3 AU: Roozbahani, Mohammad Mahdi;Huat, Bujang B. K.;Asadi, Afshin;
10:249:17 Solution synthesis and characterization of zinc oxide thin film consisted of nanosize particles and controllable surface structure
DOI:10.1016/j.matlet.2014.05.136 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Zhao, Zhihuan;Fan, Jimin;Gong, Chao;Yin, Shu;Sato, Tsugio;
10:249:18 Selective H2S detection by CuO functionalized ZnO nanotetrapods at room temperature
DOI:10.1016/j.matchemphys.2013.11.041 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:3 AU: Kaur, Manmeet;Ganapathi, Kailasa;Mukund, Vignesh;Jain, Chavi;Ramgir, Niranjan S.;Datta, Niyanta;Bhattacharya, S.;Debnath, A. K.;Aswal, D. K.;Gupta, S. K.;
10:250:1 Fabrication and growth mechanism of hexagonal zinc oxide nanorods via solution process
DOI:10.1007/s10853-010-4294-x JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:28 AU: Wahab, Rizwan;Kim, Young-Soon;Lee, Kyeongseop;Shin, Hyung-Shik;
10:250:2 In situ TPR removal: a generic method for fabricating tubular array devices with mechanical and structural soundness, and functional robustness on various substrates
DOI:10.1039/c2jm34606k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:4 AU: Zhang, Zhonghua;Gao, Haiyong;Cai, Wenjie;Liu, Caihong;Guo, Yanbing;Gao, Pu-Xian;
10:250:3 Facile Synthesis of Titania Nanowires via a Hot Filament Method and Conductometric Measurement of Their Response to Hydrogen Sulfide Gas
DOI:10.1021/am302655j JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:13 AU: Munz, Martin;Langridge, Mark T.;Devarepally, Kishore K.;Cox, David C.;Patel, Pravin;Martin, Nicholas A.;Vargha, Gergely;Stolojan, Vlad;White, Sam;Curry, Richard J.;
10:250:4 Titania-Hydroxypropyl Cellulose Thin Films for the Detection of Peroxide Vapors
DOI:10.1021/am501535g JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: James, Travis H.;Cannon, Cody;Scott, Dane;AlOthman, Zeid;Apblett, Allen;Materer, Nicholas F.;
10:250:5 Synthesis of ZnO nanorod arrays on Zn substrates by a gas-solution-solid method and their application as an ammonia sensor
DOI:10.1007/s10853-013-7711-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:2 AU: Qiu, Yongfu;Yang, Minlin;Fan, Hongbo;Xu, Yongjun;Shao, Youyuan;Yang, Xiaoxi;Yang, Shihe;
10:250:6 Synthesis of visible light driven ZnO: Characterization and photocatalytic performance
DOI:10.1016/j.apsusc.2014.10.067 JN:APPLIED SURFACE SCIENCE PY:2014
TC:6 AU: Raza, Waseem;Haque, M. M.;Muneer, M.;
10:250:7 Gas sensing performance of hydrothermally grown CeO2-ZnO composites
DOI:10.1016/j.ceramint.2013.11.025 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Rajgure, A. V.;Tarwal, N. L.;Patil, J. Y.;Chikhale, L. P.;Pawar, R. C.;Lee, C. S.;Mulla, I. S.;Suryavanshi, S. S.;
10:250:8 Synthesis of linear ZnO structures by a thermal decomposition method and their characterisation
DOI:10.1007/s10853-011-5978-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:7 AU: Devarepally, K. K.;Cox, D. C.;Fry, A. T.;Stolojan, V.;Curry, R. J.;Munz, M.;
10:250:9 ZnO films and nanorod/shell arrays electrodeposited on PET-ITO electrodes
DOI:10.1016/j.materresbull.2012.12.045 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Sima, Mariana;Vasile, Eugeniu;Sima, Marian;
10:250:10 Template-free electrodeposition of highly oriented and aspect-ratio controlled ZnO hexagonal columnar arrays
DOI:10.1088/0957-4484/23/25/255602 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Antohe, Vlad Andrei;Gence, Loik;Srivastava, Sandeep Kumar;Piraux, Luc;
10:250:11 Oxide-catalyzed growth of Ag2O/Zn2SnO4 hybrid nanowires and their reversible catalytic ambient ethanol/oxygen detection
DOI:10.1039/c0jm00200c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:6 AU: Cai, Wenjie;Shimpi, Paresh;Jian, Dunliang;Gao, Pu-Xian;
10:251:1 Synthesis, characterization and photocatalytic activity of beta-Ga2O3 nanostructures
DOI:10.1016/j.powtec.2010.06.004 JN:POWDER TECHNOLOGY PY:2010
TC:28 AU: Hou, Yidong;Zhang, Jinshui;Ding, Zhengxin;Wu, Ling;
10:251:2 Synthesis of ultrafine beta-Ga2O3 nanopowder via hydrothermal approach: A strong UV "excimer-like" emission
DOI:10.1016/j.matlet.2010.10.007 JN:MATERIALS LETTERS PY:2011
TC:10 AU: El-Sayed, E. I.;Ai-Ghamdi, A. A.;Al-Heniti, S.;Al-Marzouki, F.;El-Tantawy, F.;
10:251:3 Enhanced Photocatalytic Activity in beta-Ga2O3 Nanobelts
DOI:10.1111/j.1551-2916.2011.04479.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:23 AU: Tien, Li-Chia;Chen, Wei-Tong;Ho, Ching-Hwa;
10:251:4 Synthesis and characteristics of pure beta-Ga2O3 and Tb3+ doped beta-Ga2O3 hollow nanostructures
DOI:10.1016/j.matlet.2013.08.063 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Kang, Bong Kyun;Mang, Sung Ryul;Go, Da Hyeon;Yoon, Dae Ho;
10:251:5 Synthesis, morphology, optical and photocatalytic performance of nanostructured beta-Ga2O3
DOI:10.1016/j.materresbull.2013.02.047 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:8 AU: Girija, K.;Thirumalairajan, S.;Avadhani, G. S.;Mahgalaraj, D.;Ponpandian, N.;Viswanathan, C.;
10:251:6 Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor-solid deposition
DOI:10.1016/j.jcrysgro.2014.03.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Hosein, Ian D.;Hegde, Manu;Jones, Peter D.;Chirmanov, Vadim;Radovanovic, Pavle V.;
10:251:7 Ga2O3 nanowires grown on GaN-Ga2O3 core-shell nanoparticles using a new method: Structure, morphology, and composition
DOI:10.1016/j.matlet.2010.07.050 JN:MATERIALS LETTERS PY:2010
TC:11 AU: Xiao, Hongdi;Pei, Haiyan;Hu, Wenrong;Jiang, Bo;Qiu, Yingbin;
10:251:8 Synthesis, morphology and optical properties of pure and Eu3+ doped beta-Ga2O3 hollow nanostructures by hydrothermal method
DOI:10.1016/j.matchemphys.2014.04.025 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Kang, B. K.;Mang, S. R.;Lim, H. D.;Song, K. M.;Song, Y. H.;Go, D. H.;Jung, M. K.;Senthil, K.;Yoon, D. H.;
10:251:9 Application of soluble salt-assisted route to synthesis of beta-Ga2O3 nanopowders
DOI:10.1007/s00339-013-8175-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Lv, Yingying;Yu, Leshu;Zha, Guojun;Zheng, Dagui;Jiang, Chengming;
10:251:10 A comparative study of beta-Ga2O3 nanowires grown on different substrates using CVD technique
DOI:10.1016/j.jallcom.2013.10.165 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Kumar, Sudheer;Tessarek, C.;Christiansen, S.;Singh, R.;
10:251:11 CL study of blue and UV emissions in beta-Ga2O3 nanowires grown by thermal evaporation of GaN
DOI:10.1063/1.3620986 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:10 AU: Guzman-Navarro, G.;Herrera-Zaldivar, M.;Valenzuela-Benavides, J.;Maestre, D.;
10:251:12 Synthesis and enhanced optical properties of Eu3+-doped beta-Ga2O3 nanoparticles using Eu2O3@B2O3 core-shell
DOI:10.1016/j.matlet.2013.01.068 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Kang, Bong Kyun;Kim, Myung-Oh;Mang, Sung Ryul;Yoon, Dae Ho;
10:251:13 Influence of annealing time on microstructure of one-dimensional Ga2O3 nanorods
DOI:10.1016/j.jallcom.2010.03.106 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Shi, Feng;Zhang, Shiying;Xue, Chengshan;
10:251:14 Synthesis and characterization of gallium oxide nanowires via a hydrothermal method
DOI:10.1016/j.matchemphys.2010.01.009 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:14 AU: Quan, Yu;Fang, Dong;Zhang, Xueying;Liu, Suqin;Huang, Kelong;
10:251:15 Persistent luminescence and photocatalytic properties of Ga2O3:Cr3+, Zn2+ phosphors
DOI:10.1016/j.optmat.2014.03.005 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Wang, Yinhai;Xu, Ke;Li, Darong;Zhao, Hui;Hu, Zhengfa;
10:251:16 Synthesis and enhanced blue emission of Eu2+-doped GaN/SiO2 nanocomposites by addition of SiO2 nanoparticles
DOI:10.1016/j.matlet.2012.03.089 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Kang, Bong Kyun;Kim, Myung-Oh;Yoon, Dae Ho;
10:251:17 Synthesis and structural properties of beta-Ga2O3 nanoparticles by liquid phase precursor method
DOI:10.1016/j.mseb.2009.12.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Kang, S. M.;Kang, B. K.;Song, Y. H.;Yoon, D. H.;
10:251:18 The effect of deposition time on the structural and optical properties of beta-Ga2O3 nanowires grown using CVD technique
DOI:10.1007/s11051-013-2189-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:5 AU: Kumar, Sudheer;Kumar, Vipin;Singh, Trilok;Haehnel, A.;Singh, R.;
10:251:19 Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors
DOI:10.1116/1.4769863 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Seok, Ogyun;Ahn, Woojin;Han, Min-Koo;Ha, Min-Woo;
10:252:1 High performance stretchable UV sensor arrays of SnO2 nanowires
DOI:10.1088/0957-4484/24/31/315502 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Kim, Daeil;Shin, Gunchul;Yoon, Jangyeol;Jang, Dongseok;Lee, Seung-Jung;Zi, Goangseup;Ha, Jeong Sook;
10:252:2 White-Light Emitting Diode Array of p(+)-Si/Aligned n-SnO2 Nanowires Heterojunctions
DOI:10.1002/adfm.201001678 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:16 AU: Min, Kyung Whon;Kim, Yong Kwan;Shin, Gunchul;Jang, Seunghun;Han, Moonsup;Huh, Junghwan;Kim, Gyu Tae;Ha, Jeong Sook;
10:252:3 Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film
DOI:10.1088/0957-4484/24/45/455701 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Kim, Joonsung;Yoon, Jangyeol;Na, Junhong;Yee, Seongmin;Kim, Gyu Tae;Ha, Jeong Sook;
10:252:4 p-n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO2 nanowires
DOI:10.1088/0957-4484/23/26/265301 JN:NANOTECHNOLOGY PY:2012
TC:5 AU: Yoon, Jangyeol;Min, Kyung Whon;Kim, Joonsung;Kim, Gyu Tae;Ha, Jeong Sook;
10:252:5 Facile Fabrication of SWCNT/SnO2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate
DOI:10.1002/adfm.201101470 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:9 AU: Park, Jaehyun;Kim, Yoonchul;Kim, Gyu-Tae;Ha, Jeong Sook;
10:252:6 Array of Single-Walled Carbon Nanotube Intrajunction Devices Fabricated via Type Conversion by Partial Coating with beta-Nicotinamide Adenine Dinucleotide
DOI:10.1002/adfm.201100265 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:6 AU: Yoon, Jangyeol;Park, Jaehyun;Kim, Junsung;Kim, Gyu Tae;Ha, Jeong Sook;
10:252:7 Effect of humidity and thermal curing of polymer gate dielectrics on the electrical hysteresis of SnO2 nanowire field effect transistors
DOI:10.1063/1.3562950 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Hong, Sahngki;Kim, Daeil;Kim, Gyu-Tae;Ha, Jeong Sook;
10:252:8 Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric
DOI:10.1088/0957-4484/24/40/405203 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Opoku, C.;Hoettges, K. F.;Hughes, M. P.;Stolojan, V.;Silva, S. R. P.;Shkunov, M.;
10:252:9 Integrating ZnO Microwires with Nanoscale Electrodes Using a Suspended PMMA Ribbon for Studying Reliable Electrical and Electromechanical Properties
DOI:10.1002/aenm.201301973 JN:ADVANCED ENERGY MATERIALS PY:2014
TC:1 AU: Kim, Hakseong;Yun, Hoyeol;Yoon, Ho Ang;Lee, Sang Wook;
10:252:10 Gel-based separation of single-walled carbon nanotubes for metallic and semiconducting fractions
DOI:10.1016/j.materresbull.2011.06.028 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Lukaszczuk, Pawel;Borowiak-Palen, Ewa;Ruemmeli, Mark H.;Kalenczuk, Ryszard J.;
10:252:11 p-n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film
DOI:10.1088/0957-4484/22/38/385302 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Park, Jaehyun;Yoon, Jangyeol;Kim, Gyu-Tae;Ha, Jeong Sook;
10:252:12 Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors
DOI:10.1063/1.3357432 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Park, Hyun Hee;Kang, Pil Soo;Kim, Gyu Tae;Ha, Jeong Sook;
10:253:1 First-principle study on magnetic properties of Mn/Fe codoped ZnS
DOI:10.1016/j.jmmm.2012.02.011 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:9 AU: Chen, Hongxia;
10:253:2 Magnetism in ZnO nanowire with Fe/Co codoping: First-principles density functional calculations
DOI:10.1103/PhysRevB.81.235215 JN:PHYSICAL REVIEW B PY:2010
TC:17 AU: Ghosh, S.;Wang, Q.;Das, G. P.;Jena, P.;
10:253:3 Comparative studies on magnetic properties of Mn/Fe codoped ZnS nanowires
DOI:10.1016/j.jmmm.2012.10.042 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:1 AU: Chen, Hongxia;Chen, Changyuan;
10:253:4 Comparative studies on the magnetic properties of ZnS nanowires doped with transition metal atoms
DOI:10.1063/1.3573388 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Chen, Hongxia;Shi, Daning;Qi, Jingshan;
10:253:5 Origin of magnetism in undoped MoO2 studied by first-principles calculations
DOI:10.1103/PhysRevB.81.134407 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Wang, Fenggong;Pang, Zhiyong;Lin, Liang;Fang, Shaojie;Dai, Ying;Han, Shenghao;
10:253:6 Magnetic properties of Ni doped gallium nitride with vacancy induced defect
DOI:10.1016/j.jmmm.2009.09.028 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:8 AU: Basha, S. Munawar;Ramasubramanian, S.;Thangavel, R.;Rajagopalan, M.;Kumar, J.;
10:253:7 First-principles study on the magnetic properties of transition-metal atoms doped (ZnS)(12) cluster
DOI:10.1016/j.jmmm.2010.10.044 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:6 AU: Chen, Hongxia;Shi, Daning;Qi, Jingshan;Wang, Baolin;
10:253:8 Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles
DOI:10.1016/j.jmmm.2011.12.042 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Tong, Liu-Niu;Wang, Yi-Chao;He, Xian-Mei;Han, Huai-Bin;Xia, Ai-Lin;Hu, Jin-Lian;
10:253:9 Exchange mechanism of half-metallic ferromagnetism of TiO2 doped with double impurities: A first-principles ASW study
DOI:10.1016/j.jmmm.2009.09.075 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:8 AU: Lamrani, A. Fakhim;Belaiche, M.;Benyoussef, A.;El Kenz, A.;Saidi, E. H.;
10:253:10 Effect of carbon co-doping on the magnetic properties of bulk Mn doped ZnO
DOI:10.1016/j.jmmm.2011.07.005 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:3 AU: Sharma, V. K.;Najim, M.;Varma, G. D.;
10:253:11 Magnetic properties in (Mn,Fe)-codoped ZnO nanowire
DOI:10.1016/j.tsf.2013.09.081 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Cao, Huawei;Lu, Pengfei;Cong, Zixiang;Yu, Zhongyuan;Cai, Ningning;Zhang, Xianlong;Gao, Tao;Wang, Shumin;
10:253:12 Electronic structures and ferromagnetism of SnO2 (rutile) doped with double-impurities: First-principles calculations
DOI:10.1063/1.4852475 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Lamrani, A. Fakhim;Belaiche, M.;Benyoussef, A.;Kenz, El;
10:253:13 Formation and identification of secondary oxide phases in co-sputtered ZnO:Cr films
DOI:10.1016/j.tsf.2009.10.162 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Hu, Y. M.;Hsu, C. W.;Wang, C. Y.;Lee, S. S.;Chiou, J. W.;Han, T. C.;Chen, G. J.;Chou, W. Y.;Chang, J.;
10:254:1 Growth and Bending-Sensitive Photoluminescence of a Flexible PbTiO3/ZnO Nanocomposite
DOI:10.1021/am5009024 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Jiang, Shan;Ren, Zhaohui;Yin, Simin;Gong, Siyu;Yu, Yifeng;Li, Xiang;Wei, Xiao;Xu, Gang;Shen, Ge;Han, Gaorong;
10:254:2 PbTiO3 Nanofibers with Edge-Shared TiO6 Octahedra
DOI:10.1021/ja1011614 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:35 AU: Ren, Zhaohui;Xu, Gang;Liu, Yong;Wei, Xiao;Zhu, Yihan;Zhang, Xiaobin;Lv, Guanglie;Wang, Youwen;Zeng, Yuewu;Du, Piyi;Weng, Wenjian;Shen, Ge;Jiang, J. Z.;Han, Gaorong;
10:254:3 A straightforward synthesis of carbon nanotube-perovskite composites for solid oxide fuel cells
DOI:10.1039/c1jm11632k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:6 AU: Pinedo, Ricardo;Ruiz de Larramendi, Idoia;Jimenez de Aberasturi, Dorleta;Gil de Muro, Izaskun;Tomas Aguayo, Andres;Ignacio Ruiz de larramendi, Jose;Rojo, Teofilo;
10:254:4 Single-crystal nanofibers of Zr-doped new structured PbTiO3: hydrothermal synthesis, characterization and phase transformation
DOI:10.1039/c0jm04212a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:8 AU: Xiao, Zhen;Ren, Zhaohui;Liu, Zhenya;Wei, Xiao;Xu, Gang;Liu, Yong;Li, Xiang;Shen, Ge;Han, Gaorong;
10:254:5 Size-Controlled Single-Crystal Perovskite PbTiO3 Nanofibers from Edge-Shared TiO6 Octahedron Columns
DOI:10.1002/smll.201200795 JN:SMALL PY:2012
TC:11 AU: Liu, Zhenya;Ren, Zhaohui;Xiao, Zhen;Chao, Chunying;Wei, Xiao;Liu, Yong;Li, Xiang;Xu, Gang;Shen, Ge;Han, Gaorong;
10:254:6 Fabrication of a Vertically Aligned Ferroelectric Perovskite Nanowire Array on Conducting Substrate
DOI:10.1021/cm101412d JN:CHEMISTRY OF MATERIALS PY:2010
TC:20 AU: Im, Badro;Jun, Hwichan;Lee, Kyung Hee;Lee, Sung-Ho;Yang, Il Kyu;Jeong, Yoon Hee;Lee, Jae Sung;
10:254:7 Theoretical and experimental study of Raman spectra of pre-perovskite PbTiO3
DOI:10.1063/1.3632070 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Ni, Li-Hong;Liu, Yong;Ren, Zhao-Hui;Li, Xiang;Xu, Gang;Song, Chen-Lu;Han, Gao-Rong;
10:254:8 Single-crystal lead titanate perovskite dendrites derived from single-crystal lead titanate pyrochlore dendrites by phase transition at elevated temperature
DOI:10.1016/j.jcrysgro.2012.02.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Xu, Gang;Zhang, Yanfang;He, Wanbo;Zhao, Yan-Gang;Liu, Yong;Shen, Ge;Han, Gaorong;
10:254:9 Facile synthesis of single crystalline vanadium pentoxide nanowires and their photocatalytic behavior
DOI:10.1016/j.matlet.2010.08.022 JN:MATERIALS LETTERS PY:2010
TC:5 AU: Shahid, Muhammad;Rhen, Danielle S.;Shakir, Imran;Patole, Shashikant P.;Yoo, Ji Beom;Yang, Seok-Jo;Kang, Dae Joon;
10:254:10 Morphology controlled fabrication and ferroelectric properties of vertically aligned one-dimensional lead titanate nanoarrays
DOI:10.1088/0957-4484/23/13/135602 JN:NANOTECHNOLOGY PY:2012
TC:2 AU: Jun, Hwichan;Im, Badro;Lee, Kyung Hee;Yang, Il Kyu;Jeong, Yoon Hee;Lee, Jae Sung;
10:255:1 Green synthesis of hollow-nanostructured ZnO2 and ZnO
DOI:10.1016/j.matlet.2011.12.062 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Liu, Shuang Zhi;Zhang, Yong Cai;Wang, Tian Xi;Yang, Feng Xia;
10:255:2 Nanostructured morphology control and optical properties of ZnO thin film deposited from chemical solution
DOI:10.1016/j.materresbull.2014.01.014 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Chen, Chen;Xu, Haiyan;Zhang, Fengjun;Wu, Guotian;
10:255:3 Field emission property of ZnO nanoneedle arrays with different morphology
DOI:10.1016/j.matlet.2013.01.028 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zhang, Guanghua;Wei, Lin;Chen, Yanxue;Mei, Liangmo;Jiao, Jun;
10:255:4 Green hydrothermal synthesis and optical absorption properties of ZnO2 nanocrystals and ZnO nanorods
DOI:10.1016/j.matlet.2010.11.032 JN:MATERIALS LETTERS PY:2011
TC:10 AU: Guo, Tian Hong;Liu, Yan;Zhang, Yong Cai;Zhang, Ming;
10:255:5 Green synthesis of ZnO2 nanoparticles from hydrozincite and hydrogen peroxide at room temperature
DOI:10.1016/j.matlet.2010.04.022 JN:MATERIALS LETTERS PY:2010
TC:14 AU: Yang, Li Yun;Feng, Gui Peng;Wang, Tian Xi;
10:255:6 Green hydrothermal synthesis and photoluminescence property of ZnO2 nanoparticles
DOI:10.1016/j.matlet.2009.11.008 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Bai, Haixin;Liu, Xiaohua;
10:255:7 Low-temperature growth of well-aligned ZnO nanorods/nanowires on flexible graphite sheet and their photoluminescence properties
DOI:10.1016/j.materresbull.2012.02.038 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:9 AU: Zhong, Guo;Kalam, Abul;Al-Shihri, Ayed Sad;Su, Qingmei;Li, Jie;Du, Gaohui;
10:255:8 Solvothermal synthesis of the special shape (deformable) hollow g-C3N4 nanospheres
DOI:10.1016/j.matlet.2011.01.008 JN:MATERIALS LETTERS PY:2011
TC:11 AU: Bai, Xinjiao;Li, Jie;Cao, Chuanbao;Hussain, Sajad;
10:255:9 Green synthesis of flower-like CuI microstructures composed of trigonal nanostructures using pomegranate juice
DOI:10.1016/j.matlet.2013.02.114 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Tavakoli, Farnosh;Salavati-Niasari, Masoud;Mohandes, Fatemeh;
10:255:10 Template assisted synthesis of europium sulfide nanotubes
DOI:10.1016/j.matlet.2010.10.058 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Harrison, Melissa A.;Somarajan, Suseela;Mahajan, Sameer V.;Koktysh, Dmitry S.;van Benthem, Klaus;Dickerson, James H.;
10:255:11 Fabrication of ZnO nanorod arrays via electrospinning assisted hydrothermal method
DOI:10.1016/j.matlet.2014.07.102 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Dong, Xiaobin;Yang, Ping;Shi, Ruixia;
10:255:12 Synthesis and photocatalytic activity of SiO2/g-C3N4 composite photocatalyst
DOI:10.1016/j.matlet.2013.10.016 JN:MATERIALS LETTERS PY:2014
TC:13 AU: Wang, Xiaoxing;Wang, Sisi;Hu, Wenda;Cai, Jun;Zhang, Lihong;Dong, Lvzhuo;Zhao, Leihong;He, Yiming;
10:255:13 Controlled synthesis of 1D ZnO nanostructures via hydrothermal process
DOI:10.1016/j.materresbull.2013.09.046 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Liu, Di;Liu, Yanfang;Zong, Ruilong;Bai, Xiaojuan;Zhu, Yongfa;
10:255:14 Layer-structured ZnO nanowire arrays with dominant surface- and acceptor-related emissions
DOI:10.1016/j.matlet.2011.01.080 JN:MATERIALS LETTERS PY:2011
TC:3 AU: He, Haiping;Yang, Qian;Wang, Jingrui;Ye, Zhizhen;
10:256:1 Synthesis, optical properties, and chemical-biological sensing applications of one-dimensional inorganic semiconductor nanowires
DOI:10.1016/j.pmatsci.2013.01.001 JN:PROGRESS IN MATERIALS SCIENCE PY:2013
TC:6 AU: Kenry;Lim, Chwee Teck;
10:256:2 Co-crystallization of trace amounts of M2+ ions with ZnSeO4 center dot 6H(2)O at 25 degrees C
DOI:10.1016/j.jcrysgro.2009.11.054 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Smolik, Marek;Kowalik, Anna;
10:256:3 Vapor-liquid-solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder
DOI:10.1016/j.jcrysgro.2011.08.025 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Yu, Leshu;Lv, Yingying;Zhang, Xiaolan;Zhang, Yiyue;Zou, Ruyi;Zhang, Fan;
10:256:4 AlN nanowires: synthesis, physical properties, and nanoelectronics applications
DOI:10.1007/s10853-012-6388-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:3 AU: Kenry;Yong, Ken-Tye;Yu, Siu Fung;
10:256:5 Formation and growth mechanism of ripple-like AlN nanowires
DOI:10.1007/s00339-009-5541-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:8 AU: Shen, Longhai;Li, Xuefei;Cui, Qiliang;Liu, Bingbing;Cui, Tian;
10:256:6 Synthesis and optical characterization of vertically grown ZnO nanowires in high crystallinity through vapor-liquid-solid growth mechanism
DOI:10.1016/j.apsusc.2010.08.067 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Suh, Duk-Il;Byeon, Clare Chisu;Lee, Chang-Lyoul;
10:256:7 Synthesis of rhombic and triangular cross-sectional AlN nanorods on Si substrate via thermal CVD
DOI:10.1016/j.matlet.2011.02.052 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Yu, Leshu;Lv, Yingying;Liu, Pingying;Yu, Xinquan;
10:256:8 Low-temperature vapor synthesis of 1D beta-Ga2O3 nanostructures on Si substrate by inert salt-assisted route
DOI:10.1016/j.mseb.2012.08.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:3 AU: Lv, Yingying;Yu, Leshu;Zheng, Dagui;Xie, Aili;Chen, Xueli;
10:256:9 Comparison of structural and photoluminescence properties of zinc oxide nanowires grown by vapor-solid and vapor-liquid-solid methods
DOI:10.1016/j.tsf.2011.10.071 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Mousavi, S. H.;Haratizadeh, H.;Minaee, H.;
10:256:10 Phase-Equilibrium-Dominated Vapor-Liquid-Solid Growth Mechanism
DOI:10.1021/ja910874x JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:8 AU: He, Chengyu;Wang, Xizhang;Wu, Qiang;Hu, Zheng;Ma, Yanwen;Fu, Jijiang;Chen, Yi;
10:256:11 Large-scale synthesis of AN nanofibers by direct nitridation of aluminum
DOI:10.1016/j.ceramint.2010.05.024 JN:CERAMICS INTERNATIONAL PY:2010
TC:6 AU: Zhang, P. G.;Wang, K. Y.;Guo, S. M.;
10:256:12 Synthesis of AlN porous-shell hollow spheres by a combustion route
DOI:10.1016/j.ceramint.2012.10.235 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Shi, Zhongqi;Yang, Wanli;Kang, Yongfeng;Qiao, Guanjun;Jin, Zhihao;
10:256:13 Coefficients, D-2/1 of cocrystallization of M2+ ions with ZnSeO4 center dot 5H(2)O at 40 degrees C and ZnSeO4 center dot H2O at 50 degrees C and their dependences on various physicochemical and crystal-chemical factors
DOI:10.1016/j.jcrysgro.2011.09.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:0 AU: Smolik, Marek;Kowalik, Anna;Maczka, Konrad;
10:257:1 Structural and optical properties of gel-combustion synthesized Zr doped ZnO nanoparticles
DOI:10.1016/j.optmat.2013.01.019 JN:OPTICAL MATERIALS PY:2013
TC:12 AU: Khan, Imran;Khan, Shakeel;Nongjai, Razia;Ahmed, Hilal;Khan, Wasi;
10:257:2 Synthesis and optical characterization of aluminum doped ZnO nanoparticles
DOI:10.1016/j.ceramint.2014.04.057 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Mallika, A. N.;RamachandraReddy, A.;SowriBabu, K.;Reddy, K. Venugopal;
10:257:3 Optimization of UV emission intensity of ZnO nanoparticles by changing the excitation wavelength
DOI:10.1016/j.matlet.2013.02.079 JN:MATERIALS LETTERS PY:2013
TC:15 AU: Babu, K. Sowri;Reddy, A. Ramachandra;Sujatha, Ch.;Reddy, K. Venugopal;
10:257:4 Structural and photoluminescence properties of Mg substituted ZnO nanoparticles
DOI:10.1016/j.optmat.2013.12.015 JN:OPTICAL MATERIALS PY:2014
TC:7 AU: Mallika, A. N.;Reddy, A. Ramachandra;Babu, K. Sowri;Sujatha, Ch.;Reddy, K. Venugopal;
10:257:5 Excitation-dependent photoluminescence of ZnO microrods with MgO surface coating
DOI:10.1016/j.matlet.2012.05.060 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Yu, Bin;Xu, Xiaoyong;Zhuang, Shengdong;Pan, Jing;Hu, Jingguo;
10:257:6 Controlling the size and optical properties of ZnO nanoparticles by capping with SiO2
DOI:10.1016/j.materresbull.2013.09.024 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:5 AU: Babu, K. Sowri;Reddy, A. Ramachandra;Reddy, K. Venugopal;
10:257:7 Annealing effects on photoluminescence of ZnO nanoparticles
DOI:10.1016/j.matlet.2013.07.114 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Babu, K. Sowri;Reddy, A. Ramachandra;Sujatha, Ch.;Reddy, K. V. G.;Mallika, A. N.;
10:257:8 Synthesis and characterization of porous ZnO nanoparticles by hydrothermal treatment of a pure aqueous precursor
DOI:10.1016/j.materresbull.2011.01.002 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:9 AU: Sahoo, Trilochan;Kim, Myoung;Baek, Jong Hyeob;Jeon, Seong-Ran;Kim, Jin Soo;Yu, Yeon-Tae;Lee, Cheul-Ro;Lee, In-Hwan;
10:257:9 High thermal annealing effect on structural and optical properties of ZnO-SiO2 nanocomposite
DOI:10.1016/j.mssp.2014.07.055 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Babu, K. Sowri;Reddy, A. Ramachandra;Reddy, K. Venugopal;Mallika, A. N.;
10:257:10 Temperature-dependent dielectric and magnetic properties of Mn doped zinc oxide nanoparticles
DOI:10.1016/j.mssp.2014.05.028 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Khan, Imran;Khan, Shakeel;Khan, Wasi;
10:257:11 Effect of Annealing on Lattice Strain and Near-Band-Edge Emission of ZnO Nanorods
DOI:10.1007/s13391-014-4007-8 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Babikier, Musbah;Wang, Jinzhong;Wang, Dunbo;Li, Qian;Sun, Jianming;Yan, Yuan;Wang, Wenqi;Yu, Qingjiang;Jiao, Shujie;Gao, Shiyong;Li, Hongtao;
10:257:12 Zinc oxide nanoparticles: A study of defect level blue-green emission
DOI:10.1016/j.optmat.2011.11.015 JN:OPTICAL MATERIALS PY:2012
TC:8 AU: Ramani, Meghana;Ponnusamy, S.;Muthamizhchelvan, C.;
10:257:13 Passivation of defects in ZnO nanowires by SiO2 sputtering deposition
DOI:10.1016/j.matlet.2014.07.066 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Sombrio, C. I. L.;Franzen, P. L.;dos Reis, R.;Boudinov, H. I.;Baptista, D. L.;
10:257:14 Zinc oxide composites prepared by in situ process: UV barrier and luminescence properties
DOI:10.1016/j.matlet.2014.03.149 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Mauricio, Marcos R.;Velasco, Daniel S.;Guilherme, Marcos R.;Kunita, Marcos H.;Medina Neto, Antonio;Bento, Antonio C.;Rubira, Adley F.;
10:258:1 Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer
DOI:10.1016/j.apsusc.2013.04.155 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Novruzov, V. D.;Keskenler, E. F.;Tomakin, M.;Kahraman, S.;Gorur, O.;
10:258:2 Ag/CdS heterostructural composites: Fabrication, characterizations and photocatalysis
DOI:10.1016/j.apsusc.2014.06.022 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Liu, Yang;Chi, Mei;Dong, Hailiang;Jia, Husheng;Xu, Bingshe;Zhang, Zhuxia;
10:258:3 Structural and optoelectronic properties of Zn-incorporated CdO films prepared by sol-gel method
DOI:10.1016/j.jallcom.2012.05.117 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Dakhel, A. A.;
10:258:4 Cu-doping effects on the physical properties of cadmium sulfide thin films
DOI:10.1016/j.jallcom.2011.09.060 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Shah, N. A.;Sagar, R. R.;Mahmood, W.;Syed, W. A. A.;
10:258:5 Effect of magnesium incorporation on the structural, morphological, optical and electrical properties of CdS thin films
DOI:10.1016/j.mssp.2014.08.024 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Sivaraman, T.;Balu, A. R.;Nagarethinam, V. S.;
10:258:6 Physical properties of sublimated zinc telluride thin films for solar cell applications
DOI:10.1016/j.tsf.2013.03.088 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Shah, Nazar Abbas;Mahmood, Waqar;
10:258:7 Comparative study of electrical properties of Cd and Te-enriched CdTe thin films at cryogenic temperature
DOI:10.1016/j.jallcom.2010.07.038 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Shah, Nazar Abbas;
10:258:8 Physical properties and characterization of Ag doped CdS thin films
DOI:10.1016/j.jallcom.2011.08.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Shah, N. A.;Nazir, A.;Mahmood, W.;Syed, W. A. A.;Butt, S.;Ali, Z.;Maqsood, A.;
10:258:9 CdZnS thin films sublimated by closed space using mechanical mixing: A new approach
DOI:10.1016/j.optmat.2013.09.003 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Mahmood, Waciar;Shah, Nazar Abbas;
10:258:10 Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition
DOI:10.1016/j.tsf.2010.12.139 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Orlianges, J. C.;Champeaux, C.;Dutheil, P.;Catherinot, A.;Mejean, T. Merle;
10:258:11 Investigations of CdS and Ag-CdS nanoparticles by X-ray photoelectron spectroscopy
DOI:10.1016/j.apsusc.2010.08.035 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Thakur, Priya;Joshi, Satyawati S.;Patil, K. R.;
10:258:12 The effect of metal content on nickel-based catalysts obtained from hydrotalcites for WGSR in one step
DOI:10.1016/j.ijhydene.2013.10.114 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:1 AU: Fuentes, Edgardo Meza;Aires, Francisco J. Cadete Santos;Prakash, Swamy;Faro, Arnaldo da Costa, Jr.;Silua, Tatiana de Freitas;Assaf, Jose Mansur;Rangel, Maria do Carmo;
10:258:13 Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications
DOI:10.1016/j.jallcom.2014.04.144 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Nazir, Adnan;Toma, Andrea;Shah, Nazar Abbas;Panaro, Simone;Butt, Sajid;Sagar, Rizwan Ur Rehman;Raja, Waseem;Rasool, Kamran;Maqsood, Asghari;
10:258:14 Plasmonics properties of trimetallic Al@Al2O3@Ag@Au and Al@Al2O3@AuAg nanostructures
DOI:10.1007/s00339-014-8455-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Singh, Rina;Soni, R. K.;
10:258:15 Influence of film thickness and In-doping on physical properties of CdS thin films
DOI:10.1016/j.jallcom.2013.10.221 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Butt, Sajid;Shah, Nazar Abbas;Nazir, Adnan;Ali, Zulfiqar;Maqsood, Asghri;
10:258:16 Elaboration and characterization of bimetallic nanoparticles obtained by laser ablation of Ni75Pd25 and Au75Ag25 targets in water
DOI:10.1007/s11051-010-9949-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:10 AU: Mahfouz, R.;Aires, F. J. Cadete Santos;Brenier, A.;Ehret, E.;Roumie, M.;Nsouli, B.;Jacquier, B.;Bertolini, J. C.;
10:258:17 Vibrational and morphological properties of Sn-doped CdS films deposited by ultrasonic spray pyrolysis method
DOI:10.1016/j.mssp.2011.02.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:2 AU: Ozer, Tulay;Aksay, Sabiha;Kose, Salih;
10:258:18 Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films
DOI:10.1007/s00339-010-5598-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:3 AU: Chandramohan, S.;Kanjilal, A.;Sarangi, S. N.;Majumder, S.;Sathyamoorthy, R.;Som, T.;
10:259:1 Electrical Crystallization Mechanism and Interface Characteristics of Nanowire ZnO/Al Structures Fabricated by the Solution Method
DOI:10.1155/2012/208362 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Tseng, Yi-Wei;Hung, Fei-Yi;Lui, Truan-Sheng;Chen, Yen-Ting;Xiao, Ren-Syuan;Chen, Kuan-Jen;
10:259:2 The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
DOI:10.2320/matertrans.M2011072 JN:MATERIALS TRANSACTIONS PY:2011
TC:4 AU: Chen, Kuan-Jen;Hung, Fei-Yi;Lui, Truan-Sheng;Chang, Shoou-Jinn;Hu, Zhan-Shuo;
10:259:3 Microstructural Characteristics of InGaZnO Thin Film Using an Electrical Current Method
DOI:10.2320/matertrans.M2011312 JN:MATERIALS TRANSACTIONS PY:2012
TC:2 AU: Chen, Yen-Ting;Hung, Fei-Yi;Chang, Shoou-Jinn;Lui, Truan-Sheng;Chen, Li-Hui;
10:259:4 A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system
DOI:10.1016/j.jallcom.2010.12.155 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Chen, K. J.;Hung, F. Y.;Chang, S. J.;Chang, S. P.;Mai, Y. C.;Hu, Z. S.;
10:259:5 Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
DOI:10.2320/matertrans.M2009378 JN:MATERIALS TRANSACTIONS PY:2010
TC:18 AU: Chen, Kuan Jen;Hung, Fei Yi;Chen, Yen Ting;Chang, Shoou Jinn;Hu, Zhan Shuo;
10:259:6 The Low-Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias-Crystallization Mechanism
DOI:10.1155/2012/272387 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Chen, K. J.;Hung, F. Y.;Lui, T. S.;Chang, S. J.;Hu, Z. S.;
10:259:7 Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method
DOI:10.2320/matertrans.M2010361 JN:MATERIALS TRANSACTIONS PY:2011
TC:6 AU: Hung, Fei-Yi;
10:259:8 The Effects of Crystallization on Mechanical Mechanism and Residual Stress of Sputtered Ag Thin Films
DOI:10.2320/matertrans.M2012199 JN:MATERIALS TRANSACTIONS PY:2012
TC:1 AU: Hung, F. Y.;Lui, T. S.;Hu, Z. S.;Chang, S. J.;Chen, L. H.;Chen, K. J.;
10:259:9 Effect of cold work on the mechanical response of drawn ultra-fine gold wire
DOI:10.1016/j.commatsci.2009.12.038 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:2 AU: Narayanan, Karthic R.;Sridhar, I.;Subbiah, S.;
10:259:10 Effect of the Twins on Mechanical Properties of AISI 304 Stainless Steel Wire Using Electrical Current Method
DOI:10.2320/matertrans.M2010262 JN:MATERIALS TRANSACTIONS PY:2011
TC:3 AU: Chuang, Hsu-Chi;Hung, Fei-Yi;Lui, Truan-Sheng;Chen, Li-Hui;
10:259:11 Properties of Transparent Conducting ATO Films Deposited by RF Magnetron Sputtering
DOI:10.1080/15421406.2010.497119 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:2 AU: Huh, Kwang Soo;Hong, Hyun Joo;Lee, Eun Woo;Park, Soon Yong;Jeon, Chan Wook;Lee, Sung Ho;
10:259:12 Preparation of In2O3-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)
DOI:10.1080/15421401003608287 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:5 AU: Hong, Jeong Soo;Kim, Sang Mo;Park, Sang Joon;Choi, Hyung Wook;Kim, Kyung Hwan;
10:259:13 Preparation of Transparent Metal Films, Titanium-Doped Zinc-Oxide Films (TiO2)(2) (ZnO)(98) on PEN by Using a RF-Magnetron Sputtering Method
DOI:10.1080/15421406.2014.940569 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Seo, Sungbo;Litao, Yao;Kim, Hwamin;
10:259:14 Forced diffusion via electrically induced crystallization for fabricating ZnO-Ti-Si structures
DOI:10.1016/j.materresbull.2014.07.028 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Chen, Yen-Ting;Hung, Fei-Yi;
10:260:1 Loss of magnetization induced by doping in CeO2 films
DOI:10.1063/1.3664764 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Fernandes, V.;Schio, P.;de Oliveira, A. J. A.;Schreiner, W. H.;Varalda, J.;Mosca, D. H.;
10:260:2 Electronic structure studies of Fe doped CeO2 thin films by resonance photoemission spectroscopy
DOI:10.1063/1.3594717 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Khare, Amit;Choudhary, R. J.;Phase, D. M.;Sanyal, Sankar P.;
10:260:3 Room temperature ferromagnetism in Fe-doped CeO2 thin films grown on LaAlO3 (001)
DOI:10.1016/j.tsf.2010.08.096 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Sharma, S. K.;Thakur, P.;Kumar, Shalendra;Shukla, D. K.;Brookes, N. B.;Lee, C. G.;Pirota, K. R.;Koo, B. H.;Knobel, M.;
10:260:4 Study of valence band structure of Fe doped anatase TiO2 thin films
DOI:10.1063/1.3624775 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Bapna, Komal;Phase, D. M.;Choudhary, R. J.;
10:260:5 Effect of oxygen partial pressure and Fe doping on growth and properties of metallic and insulating molybdenum oxide thin films
DOI:10.1063/1.3703669 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Tiwari, Shailja;Master, Ridhi;Choudhary, R. J.;Phase, D. M.;Ahuja, B. L.;
10:260:6 A novel recipe to improve the magnetic properties of Mn doped Ce02 as a room temperature ferromagnetic diluted metal oxide
DOI:10.1016/j.jmmm.2014.02.013 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:6 AU: Al-Agel, Faisal A.;Al-Arfaj, Esam;Al-Ghamdi, Ahmed A.;Losovyj, Yaroslav;Bronstein, Lyudmila M.;Mahmoud, Waleed E.;
10:260:7 Magnetic properties and photoabsorption of the Mn-doped CeO2 nanorods
DOI:10.1016/j.materresbull.2010.03.015 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:14 AU: Xia, Chuanhui;Hu, Chenguo;Chen, Peng;Wan, Buyong;He, Xiaoshan;Tian, Yongshu;
10:260:8 Defect induced room temperature ferromagnetism in well-aligned ZnO nanorods grown on Si (100) substrate
DOI:10.1016/j.tsf.2011.03.062 JN:THIN SOLID FILMS PY:2011
TC:19 AU: Ahmed, Faheem;Kumar, Shalendra;Arshi, Nishat;Anwar, M. S.;Koo, Bon Heun;Lee, Chan Gyu;
10:260:9 Resonance photoemission studies of (111) oriented CeO2 thin film grown on Si (100) substrate by pulsed laser deposition
DOI:10.1063/1.3514571 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Khare, Amit;Choudhary, R. J.;Bapna, Komal;Phase, D. M.;Sanyal, Sankar P.;
10:260:10 Extrinsic ferromagnetism in epitaxial Co-doped CeO2 pulsed laser deposited films
DOI:10.1063/1.3481026 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Colis, S.;Bouaine, A.;Moubah, R.;Schmerber, G.;Ulhaq-Bouillet, C.;Dinia, A.;Daheron, L.;Petersen, J.;Becker, C.;
10:260:11 Signature of room temperature ferromagnetism in Mn doped CeO2 nanoparticles
DOI:10.1016/j.materresbull.2012.04.136 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Kumar, Shalendra;Ahmed, Faheem;Anwar, M. S.;Choi, H. K.;Chung, Hanshik;Koo, B. H.;
10:260:12 Electronic structure, magnetic and structural properties of Ni doped ZnO nanoparticles
DOI:10.1016/j.materresbull.2014.07.044 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Kumar, Shalendra;Vats, Prashant;Gautam, S.;Gupta, V. P.;Verma, K. D.;Chae, K. H.;Hashim, Mohd.;Choi, H. K.;
10:260:13 Epitaxial Gd2O3 on strained Si1-xGex layers for next generation complementary metal oxide semiconductor device application
DOI:10.1063/1.4824422 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Ghosh, Kankat;Das, Sudipta;Fissel, A.;Osten, H. J.;Laha, Apurba;
10:260:14 Highly (100)-oriented Ce1-xFexO2-delta solid solution films prepared by laser chemical vapor deposition
DOI:10.1016/j.tsf.2011.09.017 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Vargas-Garcia, J. R.;Tu, R.;Goto, T.;
10:260:15 Pulsed laser deposition of molybdenum oxide thin films
DOI:10.1007/s00339-009-5444-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:3 AU: Al-Kuhaili, M. F.;Durrani, S. M. A.;Bakhtiari, I. A.;
10:260:16 Facile growth of ZnO nanorod arrays by a microwave-assisted solution method for oxygen gas sensing
DOI:10.1016/j.tsf.2013.03.099 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Ahmed, Faheem;Arshi, Nishat;Anwar, M. S.;Danish, Rehan;Koo, Bon Heun;
10:261:1 Influence of simultaneous doping of Cd and F on certain physical properties of ZnO nanopowders synthesized via a simple soft chemical route
DOI:10.1016/j.apsusc.2012.08.023 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Ravichandran, K.;Saravanakumar, K.;Chandramohan, R.;Nandhakumar, V.;
10:261:2 Fabrication of protective over layer for enhanced thermal stability of zinc oxide based TCO films
DOI:10.1016/j.apsusc.2013.09.150 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Ravichandran, K.;Ravikumar, P.;Sakthivel, B.;
10:261:3 Low power deposition of high quality hexagonal ZnO film grown on Al2O3 (0001) sapphire by dc sputtering
DOI:10.1016/j.ceramint.2012.12.085 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Vijayalakshmi, K.;Karthick, K.;Dhivya, P.;Sridharan, M.;
10:261:4 Growth of high quality ZnO:Mg films on ITO coated glass substrates for enhanced H-2 sensing
DOI:10.1016/j.ceramint.2013.11.070 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Vijayalakshmi, K.;Renitta, A.;Karthick, K.;
10:261:5 Simultaneous doping of aluminum and fluorine on zinc oxide nanopowder using a low-cost soft chemical route
DOI:10.1016/j.matlet.2011.04.070 JN:MATERIALS LETTERS PY:2011
TC:18 AU: Saravanakumar, K.;Sakthivel, B.;Ravichandran, K.;
10:261:6 Influence of annealing on the structural, optical and photoluminescence properties of ZnO thin films for enhanced H-2 sensing application
DOI:10.1016/j.ceramint.2012.11.061 JN:CERAMICS INTERNATIONAL PY:2013
TC:23 AU: Vijayalakshmi, K.;Karthick, K.;Gopalakrishna, D.;
10:261:7 Violet-blue-green emission and shift in Mg-doped ZnO films with different ratios of oxygen to argon gas flow
DOI:10.1016/j.apsusc.2012.06.050 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Chen, Haixia;Ding, Jijun;Guo, Wenge;Shi, Feng;Li, Yingfeng;
10:261:8 Influence of deposition parameters and heat treatment on the NO2 sensing properties of nanostructured indium tin oxide thin film
DOI:10.1016/j.tsf.2010.12.164 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Vijayalakshmi, K.;Ravidhas, C.;Pillay, V. Vasanthi;GopalaKrishna, D.;
10:261:9 Existence of ferromagnetism and structural characterization of nickel doped ZnO nanocrystals
DOI:10.1016/j.apsusc.2012.04.021 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Varadhaseshan, R.;Sundar, S. Meenakshi;
10:261:10 Band gap tuning of ZnO nanoparticles via Mg doping by femtosecond laser ablation in liquid environment
DOI:10.1016/j.apsusc.2011.08.132 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Chelnokov, E.;Rivoal, M.;Colignon, Y.;Gachet, D.;Bekere, L.;Thibaudau, F.;Giorgio, S.;Khodorkovsky, V.;Marine, W.;
10:262:1 Interaction of vacuum ultraviolet excimer laser radiation with fused silica. III. Negative ion formation
DOI:10.1063/1.3290945 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: George, Sharon R.;Langford, S. C.;Dickinson, J. T.;
10:262:2 Interaction of vacuum ultraviolet excimer laser radiation with fused silica. I. Positive ion emission
DOI:10.1063/1.3253732 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: George, Sharon R.;Leraas, John A.;Langford, S. C.;Dickinson, J. T.;
10:262:3 The interaction of 193 nm excimer laser radiation with single-crystal zinc oxide: Generation of long lived highly excited particles with evidence of Zn Rydberg formation
DOI:10.1063/1.4892847 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Khan, Enamul H.;Langford, S. C.;Dickinson, J. T.;Boatner, L. A.;
10:262:4 Optical signatures of photoinduced Zn vacancies in ZnO single crystal
DOI:10.1063/1.4861144 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Khan, Enamul H.;
10:262:5 Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy
DOI:10.1103/PhysRevLett.111.017401 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:6 AU: Khan, Enamul H.;Weber, Marc H.;McCluskey, Matthew D.;
10:262:6 Interaction of vacuum ultraviolet excimer laser radiation with fused silica: II. Neutral atom and molecule emission
DOI:10.1063/1.3290879 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: George, Sharon R.;Langford, S. C.;Dickinson, J. T.;
10:262:7 Positive ion emission from oxidized aluminum during ultraviolet excimer laser irradiation
DOI:10.1063/1.3608152 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Khan, Enamul;Langford, S. C.;Dickinson, J. T.;
10:262:8 The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Positive ion emission
DOI:10.1063/1.3691939 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Khan, Enamul H.;Langford, S. C.;Dickinson, J. T.;Boatner, L. A.;
10:262:9 The interaction of 193-nm excimer laser radiation with single-crystal zinc oxide: The generation of atomic Zn line emission at laser fluences below breakdown
DOI:10.1063/1.4818833 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Khan, Enamul H.;Langford, S. C.;Dickinson, J. T.;Boatner, L. A.;
10:262:10 Persistent conductivity in post-growth doped ZnO films following pulsed UV laser irradiation
DOI:10.1016/j.tsf.2010.04.118 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Wang, Lisa J.;Exarhos, Gregory J.;
10:262:11 The interaction of 193 nm excimer laser radiation with single-crystal zinc oxide: Neutral atomic zinc and oxygen emission
DOI:10.1063/1.4816270 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Khan, Enamul H.;Langford, S. C.;Dickinson, J. T.;Boatner, L. A.;
10:262:12 The effect of thermal oxidation on laser-induced photoelectron emission during tensile deformation of polycrystalline aluminum
DOI:10.1063/1.3327237 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Cai, M.;Ricker, R. E.;Levine, L. E.;Langford, S. C.;Dickinson, J. T.;
10:263:1 Nanostructured ZnO Films for Room Temperature Ammonia Sensing
DOI:10.1007/s11664-014-3253-8 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:1 AU: Ponnusamy, Dhivya;Madanagurusamy, Sridharan;
10:263:2 Study on Ni-doped ZnO films as gas sensors
DOI:10.1016/j.apsusc.2013.05.033 JN:APPLIED SURFACE SCIENCE PY:2013
TC:15 AU: Rambu, A. P.;Ursu, L.;Iftimie, N.;Nica, V.;Dobromir, M.;Iacomi, F.;
10:263:3 Effect of In incorporation on the structural, electrical, and gas sensing properties of ZnO films
DOI:10.1007/s10853-012-6648-z JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:9 AU: Rambu, A. P.;Iftimie, N.;Nica, V.;
10:263:4 Polycrystalline ZnO-In2O3 thin films as gas sensors
DOI:10.1016/j.tsf.2011.04.158 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Rambu, A. P.;Sirbu, D.;Iftimie, N.;Rusu, G. I.;
10:263:5 Influence of the substrate nature on the properties of ZnO thin films
DOI:10.1016/j.mseb.2011.10.015 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:10 AU: Rambu, A. P.;Iftimie, N.;Rusu, G. I.;
10:263:6 Influence of the oxidation conditions on the structural characteristics and optical properties of zinc oxide thin films
DOI:10.1116/1.3484243 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:9 AU: Rambu, A. P.;Sirbu, D.;Rusu, G. I.;
10:263:7 Room temperature fabrication of highly textured hydrogen and tungsten co-doped ZnO film for solar cell applications
DOI:10.1016/j.solmat.2013.10.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Wang, Yanfeng;Zhang, Xiaodan;Zhang, He;Huang, Qian;Yang, Fu;Meng, Xudong;Wei, Changchun;Zhao, Ying;
10:263:8 Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films
DOI:10.1016/j.tsf.2010.08.048 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Jain, Vipin Kumar;Kumar, Praveen;Bhandari, Deepika;Vijay, Y. K.;
10:263:9 Evolution of the properties of ZnO thin films subjected to heating treatments
DOI:10.1016/j.tsf.2011.10.168 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Prepelita, Petronela;Stefan, N.;Luculescu, C.;Garoi, F.;Birjega, R.;
10:263:10 Functional properties of ZnO films prepared by thermal oxidation of metallic films
DOI:10.1063/1.4811357 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Rambu, A. P.;Tiron, V.;Nica, V.;Iftimie, N.;
10:263:11 On the structural and electrical characteristics of zinc oxide thin films
DOI:10.1016/j.tsf.2009.12.044 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Prepelita, Petronela;Medianu, R.;Garoi, F.;Stefan, N.;Iacomi, Felicia;
10:263:12 Characterization and ammonia sensing properties of pure and modified ZnO films
DOI:10.1007/s00339-010-6021-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Bal, Amandeep Kaur;Singh, Amarjit;Bedi, R. K.;
10:263:13 Influence of molar concentration on the physical properties of nebulizer-sprayed ZnO thin films for ammonia gas sensor
DOI:10.1016/j.mssp.2012.10.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Mariappan, R.;Ponnuswamy, V.;Ragavendar, M.;
10:263:14 Thickness dependence of microstructure and properties of ZnO thin films deposited by metal-organic chemical vapor deposition using ultrasonic nebulization
DOI:10.1016/j.tsf.2013.05.029 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Lee, Choon-Ho;Kim, Do-Woo;
10:263:15 Characteristics of Y2O3-doped indium zinc oxide films grown by radio frequency magnetron co-sputtering system
DOI:10.1016/j.tsf.2013.01.043 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Lee, Young-Jun;Kim, Joo-Hyung;Kang, Jangha;
10:264:1 Characterization and photo-chemical applications of nano-ZnO prepared by wet chemical and thermal decomposition methods
DOI:10.1016/j.materresbull.2013.07.050 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:1 AU: Mousa, M. A.;Bayoumy, W. A. A.;Khairy, M.;
10:264:2 Low-temperature growth of multiple-stack high-density ZnO nanoflowers/nanorods on plastic substrates
DOI:10.1088/0957-4484/23/48/485606 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Kim, Do Yeob;Kim, Jae Young;Chang, Hyuk;Kim, Min Su;Leem, Jae-Young;Ballato, John;Kim, Sung-O;
10:264:3 Density- and adhesion-controlled ZnO nanorod arrays on the ITO flexible substrates and their electrochromic performance
DOI:10.1016/j.jallcom.2010.07.173 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Hu, Anzheng;Wu, Fei;Liu, Jinping;Jiang, Jian;Ding, Ruimin;Li, Xin;Cheng, Cuixia;Zhu, Zhihong;Huang, Xintang;
10:264:4 ZnO/Ag heterogeneous structure nanoarrays: Photocatalytic synthesis and used as substrate for surface-enhanced Raman scattering detection
DOI:10.1016/j.jallcom.2010.10.125 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:24 AU: Hu, Haibo;Wang, Zhenghua;Wang, Sufan;Zhang, Fengwei;Zhao, Suping;Zhu, Shiyu;
10:264:5 Honeycomb-like NiO/ZnO heterostructured nanorods: photochemical synthesis, characterization, and enhanced UV detection performance
DOI:10.1039/c4tc00157e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:5 AU: Dai, Wen;Pan, Xinhua;Chen, Shanshan;Chen, Cong;Wen, Zhen;Zhang, Honghai;Ye, Zhizhen;
10:264:6 Fabrication of flower-like ZnO microstructures from ZnO nanorods and their photoluminescence properties
DOI:10.1016/j.matchemphys.2010.06.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:22 AU: Rai, Prabhakar;Jo, Jin-Nyeong;Lee, In-Hwan;Yu, Yeon-Tae;
10:264:7 Catalyst size limitation in vapor-liquid-solid ZnO nanowire growth using pulsed laser deposition
DOI:10.1016/j.tsf.2011.10.126 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Marcu, A.;Trupina, L.;Zamani, R.;Arbiol, J.;Grigoriu, C.;Morante, J. R.;
10:264:8 Growth, structure, and cathodoluminescence of Dy-doped ZnO nanowires
DOI:10.1007/s00339-011-6328-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Yang, Y. H.;Zhu, H. G.;Yang, G. W.;
10:264:9 Synthesis and optical properties of pencil-like and shuttle-like ZnO microrods
DOI:10.1007/s00339-014-8424-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Wang, Fuxue;Yao, Yao;Yan, Dawei;Zhu, Zhaomin;Gu, Xiaofeng;
10:264:10 Etch-free selective area growth of well-aligned ZnO nanorod arrays by economical polymer mask for large-area solar cell applications
DOI:10.1016/j.solmat.2011.11.002 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:7 AU: Ahsanulhaq, Qurashi;Kim, Jin Hwan;Hahn, Yoon-Bong;
10:264:11 Preparation of nano-sized flower-like ZnO bunches by a direct precipitation method
DOI:10.1016/j.apt.2012.11.002 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:5 AU: Wang, Hongqiang;Li, Caihong;Zhao, Haigang;Liu, Jinrong;
10:264:12 Synthesis and characterization of ZnO nanowires grown on different seed layers: The application for dye-sensitized solar cells
DOI:10.1016/j.renene.2013.05.006 JN:RENEWABLE ENERGY PY:2013
TC:16 AU: Nayeri, F. Dehghan;Soleimani, E. Asl;Salehi, F.;
10:265:1 Evolution of SnO2 nanoparticles into 3D nanoflowers through crystal growth in aqueous solution and its optical properties
DOI:10.1016/j.matchemphys.2011.01.043 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:18 AU: Wang, Lei;Ren, Jiawen;Liu, Xiaohui;Lu, Guanzhong;Wang, Yanqin;
10:265:2 Quantum-sized ZnO nanoparticles: Synthesis, characterization and sensing properties for NO2
DOI:10.1039/c1jm11302j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:36 AU: Bai, Shouli;Hu, Jingwei;Li, Dianqing;Luo, Ruixian;Chen, Aifan;Liu, Chung Chiun;
10:265:3 W18O49 nanowire networks for catalyzed dehydration of isopropyl alcohol to propylene under visible light
DOI:10.1039/c3ta10835j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:11 AU: Bai, Hua;Su, Ning;Li, Wentao;Zhang, Xuan;Yan, Yan;Li, Peng;Ouyang, Shuxin;Ye, Jinhua;Xi, Guangcheng;
10:265:4 Mechanism enhancing gas sensing and first-principle calculations of Al-doped ZnO nanostructures
DOI:10.1039/c3ta11516j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:15 AU: Bai, Shouli;Guo, Teng;Zhao, Yangbo;Luo, Ruixian;Li, Dianqing;Chen, Aifan;Liu, Chung Chiun;
10:265:5 Gas sensing properties of Cd-doped ZnO nanofibers synthesized by the electrospinning method
DOI:10.1039/c4ta03665d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:8 AU: Bai, Shouli;Chen, Song;Zhao, Yangbo;Guo, Teng;Luo, Ruixian;Li, Dianqing;Chen, Aifan;
10:265:6 Nanoporous ZnO nanostructures for photocatalytic degradation of organic pollutants
DOI:10.1007/s00339-012-7273-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:9 AU: Ying, Yulong;Song, Tao;Huang, Hongwen;Peng, Xinsheng;
10:265:7 Synthesis and gas sensing characteristics of SnO2 "dandelions"
DOI:10.1016/j.matchemphys.2009.09.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:11 AU: Sun, Peng;Fu, Wuyou;Yang, Haibin;Liu, Shikai;Luo, Baomin;Sui, Yongming;Zhang, Yanyan;Yuan, Mingxia;Ma, Dong;
10:265:8 Synthesis of metal and metal oxide nanostructures and their application for gas sensing
DOI:10.1016/j.matchemphys.2011.01.048 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:14 AU: Shaalan, N. M.;Yamazaki, T.;Kikuta, T.;
10:265:9 Properties of Cu-doped ZnO films by RF sputtering method: Thickness dependence
DOI:10.1016/j.materresbull.2012.04.103 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Sung, Nark-Eon;Lee, Ik-Jae;Thakur, Anup;Chae, Keun Hwa;Shin, Hyun-Joon;Lee, Han-Koo;
10:265:10 Cu doping effects on the electronic and optical properties of Cu-doped ZnO thin films fabricated by radio frequency sputtering
DOI:10.1016/j.tsf.2012.11.046 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Sung, Nark-Eon;Kang, Seen-Woong;Shin, Hyun-Joon;Lee, Han-Koo;Lee, Ik-Jae;
10:265:11 Synthesis of high surface area ZnO powder by continuous precipitation
DOI:10.1016/j.materresbull.2012.02.005 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Boz, Ismail;Kaluza, Stefan;Boroglu, Mehtap Safak;Muhler, Martin;
10:265:12 Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy
DOI:10.1016/j.tsf.2011.02.009 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Yu, Chung-Jong;Sung, Nark-Eon;Lee, Han-Koo;Shin, Hyun-Joon;Yun, Young-Duck;Kang, Seen-Woong;Lee, Ik-Jae;
10:265:13 Influences of the Amorphous Phase on Local Structures and Properties of Ferroelectric Thin Films
DOI:10.1080/00150193.2013.842443 JN:FERROELECTRICS PY:2013
TC:1 AU: Hu, Xiao-Pei;Duan, Da-Wei;Zhang, Kai;Zhang, Ying-Chun;Chu, Sheng-Qi;Zhang, Jing;Xie, Ya-Ning;Guo, Dong;Cao, Jiang-Li;
10:266:1 Properties of Co/Ni codoped ZnO based nanocrystalline DMS
DOI:10.1016/j.jmmm.2011.06.069 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:28 AU: Aljawfi, Rezq Naji;Mollah, S.;
10:266:2 Structural, magnetic and transport properties of Ni-doped ZnO films
DOI:10.1016/j.jmmm.2010.11.025 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:18 AU: Lu, J. J.;Lin, T. C.;Tsai, S. Y.;Mo, T. S.;Gan, K. J.;
10:266:3 Surface defect mediated magnetic interactions and ferromagnetism in Cr/Co Co-doped ZnO nanoparticles
DOI:10.1016/j.jmmm.2012.12.014 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:8 AU: Aljawfi, Rezq Naji;Rahman, F.;Batoo, Khalid Mujasam;
10:266:4 Mediating distribution of magnetic Co ions by Cr-codoping in (Co,Cr): ZnO thin films
DOI:10.1063/1.3470090 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Yan, Wensheng;Sun, Zhihu;Liu, Qinghua;Yao, Tao;Jiang, Qinghua;Hu, Fengchun;Li, Yuanyuan;He, Jingfu;Peng, Yanhua;Wei, Shiqiang;
10:266:5 Room temperature ferromagnetism and structural characterization of Fe,Ni co-doped ZnO nanocrystals
DOI:10.1016/j.apsusc.2013.09.144 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Dhiman, Pooja;Batoo, Khalid Mujasam;Kotnala, R. K.;Chand, Jagdish;Singh, M.;
10:266:6 Temperature dependent structural, luminescent and XPS studies of CdO: Ga thin films deposited by spray pyrolysis
DOI:10.1016/j.jallcom.2010.07.072 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Moholkar, A. V.;Agawane, G. L.;Sim, Kyu-Ung;Kwon, Ye-bin;Choi, Doo Sun;Rajpure, K. Y.;Kim, J. H.;
10:266:7 Characterization of dilute magnetic semiconducting transition metal doped ZnO thin films by sol-gel spin coating method
DOI:10.1016/j.apsusc.2014.06.093 JN:APPLIED SURFACE SCIENCE PY:2014
TC:9 AU: Vijayaprasath, G.;Murugan, R.;Ravi, G.;Mahalingam, T.;Hayakawa, Y.;
10:266:8 Effect of manganese inclusion on structural, optical and electrical properties of ZnO thin films
DOI:10.1016/j.jallcom.2010.04.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:16 AU: Ubale, A. U.;Deshpande, V. P.;
10:266:9 Magnetism of Cr-doped ZnO with intrinsic defects
DOI:10.1063/1.4727951 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Weng, Z. Z.;Huang, Z. G.;Lin, W. X.;
10:266:10 Room temperature ferroelectric and magnetic properties of (Co, Li) coimplanted ZnO films
DOI:10.1063/1.3298931 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:11 AU: Li, M.;Zou, C. W.;Wang, G. F.;Wang, H. J.;Yin, M. L.;Liu, C. S.;Guo, L. P.;Fu, D. J.;Kang, T. W.;
10:266:11 Hole mediated ferromagnetism in Cu-doped ZnO thin films on GaAs substrate
DOI:10.1016/j.jmmm.2012.09.060 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:1 AU: Singh, A. P.;Park, B. -G.;Lee, Ik-Jae;Lee, Kyu Joon;Jung, Myung-Hwa;Kim, Jinhee;Kim, J. -Y.;
10:266:12 Structural, optical, and magnetic characterization of Co and N co-doped ZnO nanopowders
DOI:10.1007/s10853-012-7055-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Kumar, Sanjeev;Chen, C. L.;Dong, C. L.;Ho, Y. K.;Lee, J. F.;Chan, T. S.;Thangavel, R.;Chen, T. K.;Mok, B. H.;Rao, S. M.;Wu, M. K.;
10:266:13 Interaction of porphyrins with CdTe quantum dots
DOI:10.1088/0957-4484/22/19/195501 JN:NANOTECHNOLOGY PY:2011
TC:13 AU: Zhang, Xing;Liu, Zhongxin;Ma, Lun;Hossu, Marius;Chen, Wei;
10:267:1 Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors
DOI:10.1063/1.4818343 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Peng, Jun;Sun, Qijun;Wang, Suidong;Wang, Hai-Qiao;Ma, Wanli;
10:267:2 Formation of highly crystallized ZnO nanostructures by hot-water treatment of etched Zn foils
DOI:10.1016/j.matlet.2012.08.103 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Tan, Wai Kian;Razak, Khairunisak Abdul;Lockman, Zainovia;Kawamura, Go;Muto, Hiroyuki;Matsuda, Atsunori;
10:267:3 Investigations on the structural and optical properties of Li, N and (Li, N) co-doped ZnO thin films prepared by sot-gel technique
DOI:10.1016/j.mssp.2010.02.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:17 AU: Ravichandran, C.;Srinivasan, G.;Lennon, Craig;Sivanathan, S.;Kumar, J.;
10:267:4 Elaboration and characterization of sol-gel derived ZrO2 thin films treated with hot water
DOI:10.1016/j.apsusc.2012.02.008 JN:APPLIED SURFACE SCIENCE PY:2012
TC:16 AU: Soo, Mun Teng;Prastomo, Niki;Matsuda, Atsunori;Kawamura, Go;Muto, Hiroyuki;Noor, Ahmad Fauzi Mohd;Lockman, Zainovia;Cheong, Kuan Yew;
10:267:5 Development of high-k hafnium-aluminum oxide dielectric films using sol-gel process
DOI:10.1557/jmr.2014.186 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:2 AU: Zhu, Leyong;Gao, Yana;Li, Xifeng;Sun, X. W.;Zhang, Jianhua;
10:267:6 Formation and stabilization of tetragonal phase in sol-gel derived ZrO2 treated with base-hot-water
DOI:10.1016/j.mseb.2009.12.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:13 AU: Prastomo, Niki;Muto, Hiroyuki;Sakai, Mototsugu;Matsuda, Atsunori;
10:267:7 Morphology-control of crystallites precipitated from ZnO gel films by applying electric field during hot-water treatment
DOI:10.1016/j.mssp.2012.12.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Matsuda, Atsunori;Tan, Wai Kian;Furukawa, Shuhei;Muto, Hiroyuki;
10:267:8 The growth and optical property of ZnO rods evolved from layered basic zinc acetate in humid atmosphere
DOI:10.1016/j.mssp.2011.04.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:3 AU: Qu, Xiurong;Wang, Wen;Liu, Wei;Yang, Zhihua;Duan, Xiaoming;Jia, Dechang;
10:267:9 Growth and characterization of sol-gel prepared Gd2O3 films as gate insulators for Zn-Sn-O thin film transistors
DOI:10.1016/j.tsf.2013.03.023 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Choi, Sungho;Park, Byung-Yoon;Jung, Ha-Kyun;
10:267:10 Synthesis, characterization, and dielectric properties of nanocrystalline Ba1-xPbxZrO3 (0 <= x <= 0.75) by polymeric citrate precursor route
DOI:10.1557/jmr.2012.242 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:4 AU: Al-Hartomy, Omar A.;Ubaidullah, Mohd;Khatoon, Sarvari;Madani, Jamal H.;Ahmad, Tokeer;
10:267:11 Formamide driven synthesis of well-aligned ZnO nanorod arrays on glass substrate
DOI:10.1016/j.mssp.2010.05.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:4 AU: AbuDakka, Mohamed;Qurashi, Ahsanulhaq;Hari, Parameswar;Alam, Mir Wakas;
10:267:12 Oxidation of Zn in UHV environment at low temperature
DOI:10.1016/j.apsusc.2011.06.071 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Noothongkaew, Suttinart;Nakajima, Hideki;Tong-on, Anusorn;Meevasana, Worawat;Songsiriritthigul, Prayoon;
10:267:13 Evolution of nanostructure, defect-free photoluminescence and enhanced photoconductivity of oxidized Zn films
DOI:10.1063/1.3592650 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Koshy, Obey;Khadar, M. Abdul;
10:267:14 High surface area BaZrO3 photocatalyst prepared by base-hot-water treatment
DOI:10.1016/j.jeurceramsoc.2011.03.026 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:4 AU: Prastomo, Niki;Zakaria, Nor Hana Binti;Kawamura, Go;Muto, Hiroyuki;Sakai, Mototsugu;Matsuda, Atsunori;
10:267:15 Colloidal and chemical aspects of nanosized hydrated zirconium dioxide synthesized via a sol-gel process
DOI:10.1016/j.jcis.2010.12.086 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:6 AU: Chepurna, Iryna;Smotraev, Roman;Kanibolotsky, Valentyn;Strelko, Volodymyr;
10:267:16 Synthesis and Raman spectra of hammer-shaped ZnO nanostructures via thermal evaporation growth
DOI:10.1016/j.mssp.2011.10.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:3 AU: Kong, Jinfang;Fan, Donghua;Zhu, Yufu;
10:268:1 ZnO nanotube-based dye-sensitized solar cell and its application in self-powered devices
DOI:10.1088/0957-4484/21/40/405203 JN:NANOTECHNOLOGY PY:2010
TC:65 AU: Han, Jingbin;Fan, Fengru;Xu, Chen;Lin, Shisheng;Wei, Min;Duan, Xue;Wang, Zhong Lin;
10:268:2 Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process
DOI:10.1016/j.tsf.2010.08.170 JN:THIN SOLID FILMS PY:2010
TC:39 AU: Tsay, Chien-Yie;Wu, Chun-Wei;Lei, Chien-Ming;Chen, Fan-Shiong;Lin, Chung-Kwei;
10:268:3 Tunable optical properties of ZnO via doping monovalent (Li+), divalent (Mn2+) and trivalent (Fe3+) cations
DOI:10.1016/j.matchemphys.2014.04.031 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Hoque, Ajnur;Boruah, Ratan;Das, Shyamal K.;
10:268:4 Polymer assisted Ga doped ZnO nanodisk/nanorod structures prepared by a low temperature one-pot hydrothermal method
DOI:10.1016/j.matlet.2011.10.071 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Ramalingam, R. Jothi;Chung, G. S.;
10:268:5 Characterization of high concentration Ga-doped ZnO nano-powders prepared by sol-gel combustion
DOI:10.1016/j.matlet.2013.08.096 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Zhang, Xinjuan;Pu, Xipeng;Chen, Yu;Gu, Xiaoyu;Xu, Di;Zhang, Sheng;
10:268:6 Preparation and electrical properties of Ga-doped ZnO nanoparticles by a polymer pyrolysis method
DOI:10.1016/j.matlet.2010.04.026 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Li, Yuan-Qing;Yong, Kang;Xiao, Hong-Mei;Ma, Wang-Jing;Zhang, Guang-Lei;Fu, Shao-Yun;
10:268:7 Synthesis and structural characterization of Ga-ZnO nanodisk/nanorods formation by polymer assisted hydrothermal process
DOI:10.1016/j.powtec.2013.01.068 JN:POWDER TECHNOLOGY PY:2013
TC:5 AU: Thirunavukkarasu, K.;Jothiramalingam, R.;
10:268:8 Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering
DOI:10.1039/c4tc00074a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Jin, C. G.;Yang, Y.;Wu, Z. F.;Zhuge, L. J.;Han, Q.;Wu, X. M.;Li, Y. Y.;Feng, Z. C.;
10:268:9 Understanding the Selective Etching of Electrodeposited ZnO Nanorods
DOI:10.1021/la503765a JN:LANGMUIR PY:2014
TC:0 AU: Illy, Benoit N.;Ingham, Bridget;Toney, Michael F.;Nandhakumar, Irish;Ryan, Mary P.;
10:269:1 Synthesis and optical properties of Mg-doped ZnO nanofibers prepared by electrospinning
DOI:10.1016/j.jallcom.2010.07.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:31 AU: Zhao, Minggang;Wang, Xinchang;Ning, Lingling;He, Hao;Jia, Jianfeng;Zhang, Liwei;Li, Xinjian;
10:269:2 The role of Al and Mg in the hydrogen storage of electrospun ZnO nanofibers
DOI:10.1016/j.ijhydene.2012.02.092 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:9 AU: Yaakob, Zahira;Khadem, Dariush Jafar;Shahgaldi, Samaneh;Daud, Wan Ramli Wan;Tasirin, Siti Masrinda;
10:269:3 Structural and hydrogenation studies of ZnO and Mg doped ZnO nanowires
DOI:10.1016/j.ijhydene.2011.04.010 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:15 AU: Singh, Jai;Hudson, M. S. L.;Pandey, S. K.;Tiwari, R. S.;Srivastava, O. N.;
10:269:4 Fabrication of CoNi alloy hollow-nanostructured microspheres for hydrogen storage application
DOI:10.1007/s11051-013-1768-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Rafique, M. Yasir;Pan, Liqing;Iqbal, M. Zubair;Rafi-ud-din;Qiu, Hongmei;Farooq, M. Hassan;Guo, Zhengang;Ellahi, Mujtaba;
10:269:5 Effect of Mg doping level on the antibacterial activity of (Mg + F)-doped ZnO nanopowders synthesized using a soft chemical route
DOI:10.1080/14786435.2014.921349 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:3 AU: Ravichandran, K.;Snega, S.;Begum, N. Jabena;Christena, L. Rene;Dheivamalar, S.;Swaminathan, K.;
10:269:6 Synthesis of Fe-doped NiO nanofibers using electrospinning method and their ferromagnetic properties
DOI:10.1016/j.jmmm.2012.02.017 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:13 AU: Liu, Shaohui;Jia, Jianfeng;Wang, Jiao;Liu, Shijiang;Wang, Xinchang;Song, Hongzhang;Hu, Xing;
10:269:7 Characterization of Mg doped ZnO nanocrystallites prepared via electrospinning
DOI:10.1016/j.ceramint.2012.02.003 JN:CERAMICS INTERNATIONAL PY:2012
TC:12 AU: Cetin, Saime Sebnem;Uslu, Ibrahim;Aytimur, Arda;Ozcelik, Suleyman;
10:269:8 Uniaxially aligned ceramic nanofibers obtained by chemical mechanical processing
DOI:10.1016/j.jallcom.2014.03.149 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Tararam, R.;Foschini, C. R.;Destro, F. B.;Simoes, A. Z.;Longo, E.;Varela, J. A.;
10:269:9 Impact of alkaline metal ions Mg2+, Ca2+, Sr2+ and Ba2+ on the structural, optical, thermal and antibacterial properties of ZnO nanoparticles prepared by the co-precipitation method
DOI:10.1039/c3tb21068e JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2013
TC:12 AU: Hameed, Abdulrahman Syedahamed Haja;Karthikeyan, Chandrasekaran;Sasikumar, Seemaisamy;Kumar, Venugopal Senthil;Kumaresan, Subramanian;Ravi, Ganesan;
10:269:10 Growth mechanism of single-crystal alpha-Al2O3 nanofibers fabricated by electrospinning techniques
DOI:10.1016/j.jeurceramsoc.2010.11.011 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:14 AU: Yu, Pei-Ching;Yang, Rung-Je;Tsai, Yi-Yang;Sigmund, Wolfgang;Yen, Fu-Su;
10:269:11 Ferromagnetic behaviors in NiO-based nanofibers synthesized by electrospinning method
DOI:10.1063/1.4768907 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Luo, Yi-Dong;Lin, Yuan-Hua;Feng, Yan-Nan;Zhang, Yu-Jun;Song, Yu;Shen, Yang;Nan, Ce-Wen;
10:269:12 Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method
DOI:10.1155/2013/252593 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Luo, Yi-Dong;Lin, Yuan-Hua;Zhang, Xuehui;Liu, Deping;Shen, Yang;Nan, Ce-Wen;
10:270:1 First-principles density functional study of dopant elements at grain boundaries in ZnO
DOI:10.1103/PhysRevB.81.085324 JN:PHYSICAL REVIEW B PY:2010
TC:23 AU: Koerner, Wolfgang;Elsaesser, Christian;
10:270:2 Analysis of electronic subgap states in amorphous semiconductor oxides based on the example of Zn-Sn-O systems
DOI:10.1103/PhysRevB.86.165210 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Koerner, Wolfgang;Gumbsch, Peter;Elsaesser, Christian;
10:270:3 Origin of subgap states in amorphous In-Ga-Zn-O
DOI:10.1063/1.4826895 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Koerner, Wolfgang;Urban, Daniel F.;Elsaesser, Christian;
10:270:4 Density functional theory study for polycrystalline ZnO doped with Si or Nb
DOI:10.1103/PhysRevB.83.205306 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Koerner, Wolfgang;Elsaesser, Christian;
10:270:5 Density-functional theory study of stability and subgap states of crystalline and amorphous Zn-Sn-O
DOI:10.1016/j.tsf.2013.05.146 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Koerner, Wolfgang;Elsaesser, Christian;
10:270:6 Density functional theory study of dopants in polycrystalline TiO2
DOI:10.1103/PhysRevB.83.205315 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Koerner, Wolfgang;Elsaesser, Christian;
10:270:7 Density functional theory study of stoichiometric and nonstoichiometric ZnO grain boundaries
DOI:10.1103/PhysRevB.84.045305 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Koerner, Wolfgang;Bristowe, Paul D.;Elsaesser, Christian;
10:270:8 Grain-boundary structural transformation induced by geometry and chemistry
DOI:10.1103/PhysRevB.87.140101 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Sato, Yukio;Roh, Ji-Young;Ikuhara, Yuichi;
10:270:9 Atomic Structure of ZnO Sigma 13 [0001]/{13(4)over-bar0} Symmetric Tilt Grain Boundary
DOI:10.1111/jace.12666 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:0 AU: Roh, Ji-Young;Sato, Yukio;Ikuhara, Yuichi;
10:271:1 Tracking defect-induced ferromagnetism in GaN:Gd
DOI:10.1103/PhysRevB.84.081201 JN:PHYSICAL REVIEW B PY:2011
TC:19 AU: Roever, Martin;Malindretos, Joerg;Bedoya-Pinto, Amilcar;Rizzi, Angela;Rauch, Christian;Tuomisto, Filip;
10:271:2 Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN
DOI:10.1063/1.3437085 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Davies, R. P.;Gila, B. P.;Abernathy, C. R.;Pearton, S. J.;Stanton, C. J.;
10:271:3 Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons
DOI:10.1063/1.4819767 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Buss, J. H.;Rudolph, J.;Shvarkov, S.;Semond, F.;Reuter, D.;Wieck, A. D.;Haegele, D.;
10:271:4 Superparamagnetism in Gd-doped GaN induced by Ga-vacancy clustering
DOI:10.1103/PhysRevB.86.180401 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Thiess, A.;Dederichs, P. H.;Zeller, R.;Bluegel, S.;Lambrecht, W. R. L.;
10:271:5 Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films
DOI:10.1063/1.4891226 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Lo, Fang-Yuh;Huang, Cheng-De;Chou, Kai-Chieh;Guo, Jhong-Yu;Liu, Hsiang-Lin;Ney, Verena;Ney, Andreas;Shvarkov, Stepan;Pezzagna, Sebastien;Reuter, Dirk;Chia, Chi-Ta;Chern, Ming-Yau;Wieck, Andreas D.;Massies, Jean;
10:271:6 Atomistic structure and energetics of GdN clusters in Gd-doped GaN
DOI:10.1016/j.actamat.2014.05.009 JN:ACTA MATERIALIA PY:2014
TC:1 AU: Wu, Mingjian;Erwin, Steven C.;Trampert, Achim;
10:271:7 Structural, Optical, and Magnetic Properties of Nd-Doped GaN Powders
DOI:10.1111/jace.13164 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:0 AU: Zhou, Chenglin;Jian, Jikang;Wang, Wenjun;Wang, Gang;Song, Bong;Wu, Rong;Li, Jin;
10:271:8 Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters
DOI:10.1016/j.jmmm.2009.06.033 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:9 AU: Ney, A.;Kammermeier, T.;Ollefs, K.;Ney, V.;Ye, S.;Dhar, S.;Ploog, K. H.;Roever, M.;Malindretos, J.;Rizzi, A.;Wilhelm, F.;Rogalev, A.;
10:271:9 Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy
DOI:10.1088/0957-4484/24/25/255701 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Wu, Mingjian;Trampert, Achim;
10:271:10 Electrical and magnetic properties of Ga1-xGdxN grown by metal organic chemical vapor deposition
DOI:10.1063/1.3656019 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Gupta, Shalini;Zaidi, Tahir;Melton, Andrew;Malguth, Enno;Yu, Hongbo;Liu, Zhiqiang;Liu, Xiaotao;Schwartz, Justin;Ferguson, Ian T.;
10:271:11 Calculated x-ray linear dichroism spectra for Gd-doped GaN
DOI:10.1103/PhysRevB.84.205119 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Cheiwchanchamnangij, Tawinan;Lambrecht, Walter R. L.;
10:271:12 Optical detection of the defects associated with the magnetic properties observed in GaN:Gd layers grown by reactive molecular beam epitaxy
DOI:10.1063/1.3626034 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Mishra, J. K.;Singh, B. P.;Dhar, S.;
10:271:13 Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation
DOI:10.1063/1.4717243 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Liu, Zhiqiang;Yi, Xiaoyan;Wang, Jianwei;Kang, Jun;Melton, Andrew G.;Shi, Yi;Lu, Na;Wang, Junxi;Li, Jinmin;Ferguson, Ian;
10:271:14 Strong atomic ordering in Gd-doped GaN
DOI:10.1063/1.4751245 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Ishimaru, Manabu;Higashi, Kotaro;Hasegawa, Shigehiko;Asahi, Hajime;Sato, Kazuhisa;Konno, Toyohiko J.;
10:271:15 Effects of the gas ambient in thermal activation of Mg-doped p-GaN on Hall effect and photoluminescence
DOI:10.1116/1.4768174 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:3 AU: Lu, Wei;Aplin, David;Clawson, Arthur R.;Yu, Paul K. L.;
10:272:1 Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity
DOI:10.1021/nn500620t JN:ACS NANO PY:2014
TC:10 AU: Consonni, Vincent;Sarigiannidou, Eirini;Appert, Estelle;Bocheux, Amandine;Guillemin, Sophie;Donatini, Fabrice;Robin, Ivan-Christophe;Kioseoglou, Joseph;Robaut, Florence;
10:272:2 Chemical Bath Deposition of ZnO Nanowires at Near-Neutral pH Conditions without Hexamethylenetetramine (HMTA): Understanding the Role of HMTA in ZnO Nanowire Growth
DOI:10.1021/la105147u JN:LANGMUIR PY:2011
TC:44 AU: McPeak, Kevin M.;Le, Thinh P.;Britton, Nathan G.;Nickolov, Zhorro S.;Elabd, Yossef A.;Baxter, Jason B.;
10:272:3 In Situ X-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition
DOI:10.1021/cm102155m JN:CHEMISTRY OF MATERIALS PY:2010
TC:22 AU: McPeak, Kevin M.;Becker, Matthew A.;Britton, Nathan G.;Majidi, Hasti;Bunker, Bruce A.;Baxter, Jason B.;
10:272:4 A facile route to patterned epitaxial ZnO nanostructures by soft lithography
DOI:10.1039/c1jm13167b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:11 AU: Richardson, Jacob J.;Estrada, Daniel;DenBaars, Steven P.;Hawker, Craig J.;Campos, Luis M.;
10:272:5 Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal
DOI:10.1063/1.3454240 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Kim, Ja-Yeon;Kwon, Min-Ki;Park, Seong-Ju;Kim, Sang Hoon;Lee, Ki-Dong;
10:272:6 Opposite crystal polarities observed in spontaneous and vapour-liquid-solid grown ZnO nanowires
DOI:10.1063/1.4804254 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Sallet, V.;Sartel, C.;Vilar, C.;Lusson, A.;Galtier, P.;
10:272:7 Position-controlled vertical arrays of single-crystalline ZnO nanowires on periodically polarity inverted templates
DOI:10.1016/j.jallcom.2011.10.015 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Park, Jinsub;Yao, Takafumi;
10:272:8 Constrained, aqueous growth of three-dimensional single crystalline zinc oxide structures
DOI:10.1063/1.4863075 JN:APL MATERIALS PY:2014
TC:2 AU: Pooley, Kathryn J.;Joo, John H.;Hu, Evelyn L.;
10:272:9 Synthesis and photocatalytic activity of monodisperse single crystalline NiO octahedrons by the selective adsorption of Cl- ions
DOI:10.1016/j.jallcom.2012.06.111 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Liu, Bin;Wei, Aihua;Zhang, Jianying;An, Lijuan;Zhang, Qiangqiang;Yang, Heqing;
10:272:10 Enhancement of light extraction in GaN-based light-emitting diodes by Al2O3-coated ZnO nanorod arrays
DOI:10.1016/j.jallcom.2014.05.019 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Park, Jinsub;Shin, Dong Su;Kim, Do-Hyun;
10:272:11 Rapid synthesis of epitaxial ZnO films from aqueous solution using microwave heating
DOI:10.1039/c0jm02907f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:8 AU: Richardson, Jacob J.;Lange, Frederick F.;
10:272:12 Towards high-performance, low-cost quartz sensors with high-density, well-separated, vertically aligned ZnO nanowires by low-temperature, seed-less, single-step, double-sided growth
DOI:10.1088/0957-4484/24/35/355503 JN:NANOTECHNOLOGY PY:2013
TC:7 AU: Orsini, Andrea;Medaglia, Pier Gianni;Scarpellini, David;Pizzoferrato, Roberto;Falconi, Christian;
10:272:13 Template-assisted assembly of ZnO nanorods with postdeposition growth
DOI:10.1116/1.4750036 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:1 AU: Lee, Tao-Hua;Sue, Hung-Jue;Cheng, Xing;
10:272:14 Fabrication of periodically polarity-inverted ZnO structures on (0001) Al2O3
DOI:10.1016/j.tsf.2009.11.011 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Park, J. S.;Minegishi, T.;Ahn, S.;Park, S. H.;Hong, S. K.;Jeon, H.;Im, I. H.;Chang, J. H.;Yao, T.;
10:273:1 Transparent and conductive W-doped SnO2 thin films fabricated by an aqueous solution process
DOI:10.1016/j.tsf.2013.02.088 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Wang, Mi;Gao, Yanfeng;Chen, Zhang;Cao, Chuanxiang;Zhou, Jiadong;Dai, Lei;Guo, Xuhong;
10:273:2 Electronic and optical properties of W-doped SnO2 from first-principles calculations
DOI:10.1016/j.commatsci.2011.10.028 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:8 AU: Zhou, Wei;Liu, Lijuan;Yuan, Mengying;Song, Qinggong;Wu, Ping;
10:273:3 Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films
DOI:10.1016/j.tsf.2009.07.119 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Huang, Yanwei;Li, Guifeng;Feng, Jiahan;Zhang, Qun;
10:273:4 Correlation between defects and conductivity of Sb-doped tin oxide thin films
DOI:10.1063/1.4816084 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Mao, Wenfeng;Xiong, Bangyun;Liu, Yong;He, Chunqing;
10:273:5 Electron Scattering Mechanism of FTO Films Grown by Spray Pyrolysis Method
DOI:10.1007/s11664-010-1225-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:19 AU: Oshima, Minoru;Yoshino, Kenji;
10:273:6 Fourier transformation infrared spectrum studies on the role of fluorine in SnO2 : F films
DOI:10.1063/1.3533801 JN:APPLIED PHYSICS LETTERS PY:2011
TC:12 AU: Zhang, B.;Tian, Y.;Zhang, J. X.;Cai, W.;
10:273:7 The effect of Mo and F double doping on structural, morphological, electrical and optical properties of spray deposited SnO2 thin films
DOI:10.1016/j.ceramint.2014.04.148 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Turgut, G.;Sonmez, E.;Aydin, S.;Dilber, R.;Turgut, U.;
10:273:8 Preliminary investigation on the modification of electronic properties in surface passivated SnO2 nanowires with Schottky contacts on being exposed to Cs-137 gamma-radiation
DOI:10.1063/1.4706557 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Kar, Ayan;Ahern, Ryan;Gopalsami, N.;Raptis, A. C.;Stroscio, Michael A.;Dutta, Mitra;
10:273:9 Tailoring the surface properties and carrier dynamics in SnO2 nanowires
DOI:10.1088/0957-4484/22/28/285709 JN:NANOTECHNOLOGY PY:2011
TC:11 AU: Kar, Ayan;Stroscio, Michael A.;Meyyappan, M.;Gosztola, David J.;Wiederrecht, Gary P.;Dutta, Mitra;
10:273:10 Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (111) substrate deposited by magnetron sputtering
DOI:10.1016/j.apsusc.2011.04.032 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Xiao, Qingquan;Xie, Quan;Shen, Xiangqian;Zhang, Jinmin;Yu, Zhiqiang;Zhao, Kejie;
10:273:11 Processing dependence of structural and physical properties of Mg2Ge thin films prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2012.05.071 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Chuang, L.;Wang, D. Y.;Tan, T. T.;Assadi, M. H. N.;Li, S.;
10:273:12 Structural properties of porous silicon/SnO2:F heterostructures
DOI:10.1016/j.tsf.2012.02.009 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Garces, F. A.;Acquaroli, L. N.;Urteaga, R.;Dussan, A.;Koropecki, R. R.;Arce, R. D.;
10:273:13 High intensity UV radiation ozone treatment of nanocrystalline TiO2 layers for high efficiency of dye-sensitized solar cells
DOI:10.1016/j.jnoncrysol.2012.01.050 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:3 AU: Saekow, Samarn;Maiakgree, Wasan;Jarernboon, Wirat;Pimanpang, Samuk;Amornkitbamrung, Vittaya;
10:273:14 Magnesium silicide thin film formation by reactive diffusion
DOI:10.1016/j.tsf.2012.08.037 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Kogut, Iu.;Record, M. -C.;
10:274:1 Controlled fabrication of ordered structure-based ZnO films by electrochemical deposition
DOI:10.1016/j.tsf.2014.11.009 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Lei, J. F. y;Wang, Z. W.;Li, W. S.;
10:274:2 Fabrication of Ordered ZnO/TiO2 Heterostructures via a Templating Technique
DOI:10.1021/la4027859 JN:LANGMUIR PY:2013
TC:11 AU: Lei, Jian F.;Li, Li B.;Shen, Xue H.;Du, Kai;Ni, Jing;Liu, Chao J.;Li, Wei S.;
10:274:3 Nanoconic TiO2 hollow spheres: novel buffers architectured for high-capacity anode materials
DOI:10.1039/c2jm34332k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:24 AU: Lei, Jianfei;Li, Weishan;Li, Xiaoping;Cairns, Elton J.;
10:274:4 Thermo-catalytic decomposition of formaldehyde: a novel approach to produce mesoporous ZnO for enhanced photocatalytic activities
DOI:10.1088/0957-4484/25/25/255701 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Lei, Jian F.;Li, Li B.;Du, Kai;Ni, Jing;Zhang, Shao F.;Zhao, Ling Z.;
10:274:5 Assembly of binary templates for fabricating arrayed pores of TiO2 films with hierarchical structures
DOI:10.1016/j.matlet.2014.06.175 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Lei, Jianfei;Du, Kai;Wei, Ronghui;Hang, Shaofeng;Ni, Jing;Li, Weishan;
10:274:6 Thermally Induced Superhydrophilicity in TiO2 Films Prepared by Supersonic Aerosol Deposition
DOI:10.1021/am401083y JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:9 AU: Park, Jung-Jae;Kim, Do-Yeon;Latthe, Sanjay S.;Lee, Jong-Gun;Swihart, Mark T.;Yoon, Sam S.;
10:274:7 Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application
DOI:10.1016/j.tsf.2013.02.027 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Dewald, Wilma;Sittinger, Volker;Szyszka, Bernd;Saeuberlich, Frank;Stannowski, Bernd;Koehl, Dominik;Ries, Patrick;Wuttig, Matthias;
10:275:1 Large-scale synthesis of ZnO balls made of fluffy thin nanosheets by simple solution process: Structural, optical and photocatalytic properties
DOI:10.1016/j.jcis.2011.07.058 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:46 AU: Umar, Ahmad;Chauhan, M. S.;Chauhan, S.;Kumar, R.;Kumar, G.;Al-Sayari, S. A.;Hwang, S. W.;Al-Hajry, A.;
10:275:2 Effective photocatalytic degradation of rhodamine B dye by ZnO nanoparticles
DOI:10.1016/j.matlet.2012.09.044 JN:MATERIALS LETTERS PY:2013
TC:42 AU: Rahman, Qazi Inamur;Ahmad, Musheer;Misra, Sunil Kumar;Lohani, Minaxi;
10:275:3 Low-temperature synthesis of ZnO quantum dots for photocatalytic degradation of methyl orange dye under UV irradiation
DOI:10.1016/j.ceramint.2014.06.076 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Khan, Rizwan;Hassan, M. Shamshi;Jang, Lee-Woon;Yun, Jin Hyeon;Ahn, Haeng-Keun;Khil, Myung-Seob;Lee, In-Hwan;
10:275:4 ZnO nano-mushrooms for photocatalytic degradation of methyl orange
DOI:10.1016/j.matlet.2013.01.044 JN:MATERIALS LETTERS PY:2013
TC:30 AU: Kumar, Rajesh;Kumar, Girish;Umar, Ahmad;
10:275:5 ZnO nanocapsules for photocatalytic degradation of thionine
DOI:10.1016/j.matlet.2012.04.039 JN:MATERIALS LETTERS PY:2012
TC:15 AU: Khayyat, Suzan A.;Akhtar, M. S.;Umar, Ahmad;
10:275:6 Photocatalytic degradation of methyl orange dye by ZnO nanoneedle under UV irradiation
DOI:10.1016/j.matlet.2014.08.064 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Tripathy, Nirmalya;Ahmad, Rafiq;Song, Jeong Eun;Ko, Hyun Ah;Hahn, Yoon-Bong;Khang, Gilson;
10:275:7 Facile low-temperature synthesis of ZnO nanopyramid and its application to photocatalytic degradation of methyl orange dye under UV irradiation
DOI:10.1016/j.matlet.2014.07.006 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Khan, Rizwan;Hassan, M. Shamshi;Cho, Han-Su;Polyakov, Alexander Y.;Khil, Myung-Seob;Lee, In-Hwan;
10:275:8 Photocatalytic degradation of Alizarin Red S using simply synthesized ZnO nanoparticles
DOI:10.1016/j.matlet.2013.05.074 JN:MATERIALS LETTERS PY:2013
TC:16 AU: Kansal, Sushil Kumar;Lamba, Randeep;Mehta, S. K.;Umar, Ahmad;
10:275:9 Robust and Multifunctional Nanosheath for Chemical and Biological Nanodevices
DOI:10.1021/nl204280d JN:NANO LETTERS PY:2012
TC:14 AU: Ra, Hyun-Wook;Kim, Jin-Tae;Khan, Rizwan;Sharma, Deepti;Yook, Yeong-Geun;Hahn, Yoon-Bong;Park, Jin-Ho;Kim, Dae-Ghon;Im, Yeon-Ho;
10:276:1 Preparation and characterization of SnO2 nanoparticles using high power pulsed laser
DOI:10.1016/j.apsusc.2010.05.027 JN:APPLIED SURFACE SCIENCE PY:2010
TC:23 AU: Gondal, M. A.;Drmosh, Q. A.;Saleh, T. A.;
10:276:2 Optical and electrochemical studies of polyaniline/SnO2 fibrous nanocomposites
DOI:10.1016/j.materresbull.2012.11.033 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:11 AU: Manivel, P.;Ramakrishnan, S.;Kothurkar, Nikhil K.;Balamurugan, A.;Ponpandian, N.;Mangalaraj, D.;Viswanathan, C.;
10:276:3 Synthesis, characterization and photoluminescence properties of Dy3+-doped nano-crystalline SnO2
DOI:10.1016/j.matchemphys.2009.12.010 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:15 AU: Pillai, Sreejarani K.;Sikhwivhilu, Lucky M.;Hillie, Thembela K.;
10:276:4 Effect of Pd ion doping in the band gap of SnO2 nanoparticles: structural and optical studies
DOI:10.1007/s11051-013-1999-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Nandan, Brajesh;Venugopal, B.;Amirthapandian, S.;Panigrahi, B. K.;Thangadurai, P.;
10:276:5 SO42-/SnO2 as a new electrode for electrochemical supercapacitors
DOI:10.1016/j.ceramint.2014.01.047 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Gao, Yilong;Wu, Jianxiang;Zhang, Wei;Tan, Yueyue;Tang, Ting;Wang, Shuyun;Tang, Bohejin;Zhao, Jiachang;
10:276:6 Hydrothermal synthesis of SnO2 nanorods: Morphology dependence, growth mechanism and surface properties
DOI:10.1016/j.materresbull.2013.06.040 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:4 AU: Liang, Ying;Fang, Bin;
10:276:7 Interfacial hydrothermal synthesis of SnO2 nanorods towards photocatalytic degradation of methyl orange
DOI:10.1016/j.materresbull.2014.08.006 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Hou, L. R.;Lian, L.;Zhou, L.;Zhang, L. H.;Yuan, C. Z.;
10:276:8 Thermally induced structural changes and optical properties of tin dioxide nanoparticles synthesized by a conventional precipitation method
DOI:10.1016/j.mssp.2013.06.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Gaber, A.;Abdel-Latief, A. Y.;Abdel-Rahim, M. A.;Abdel-Salam, Mahmoud N.;
10:276:9 Hydrothermal Synthesis of SnO2 Nanostructures with Different Morphologies and Their Optical Properties
DOI:10.1155/2011/529874 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:10 AU: Tan, Lin;Wang, Lihong;Wang, Yude;
10:276:10 Effect of synthesis condition on morphology and yield of hydrothermally grown SnO2 nanorod clusters
DOI:10.1016/j.jeurceramsoc.2011.02.018 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:9 AU: Supothina, S.;Rattanakam, R.;Vichaphund, S.;Thavorniti, P.;
10:276:11 Porous antimony-doped tin oxide cathodes formed by supercritical CO2 treatment at low temperature for silver electro-deposition
DOI:10.1116/1.3682990 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:1 AU: Tien, W. C.;Chu, A. K.;Wen, H. Y.;Chang, M. Y.;Huang, W. Y.;
10:276:12 Size-controlled synthesis of SnO2 nanoparticles by sol-gel method
DOI:10.1016/j.matlet.2012.09.079 JN:MATERIALS LETTERS PY:2013
TC:14 AU: Aziz, Madzlan;Abbas, Saad Saber;Baharom, Wan Rosemaria Wan;
10:276:13 Optical properties of tin oxide nanoparticles prepared by laser ablation in water: Influence of laser ablation time duration and laser fluence
DOI:10.1016/j.matchar.2012.08.014 JN:MATERIALS CHARACTERIZATION PY:2012
TC:1 AU: Desarkar, Himadri Sankar;Kumbhakar, P.;Mitra, A. K.;
10:276:14 Preparation and electrochemical properties of ultra-fine Mn-Ni-Cu oxides for supercapacitors
DOI:10.1016/j.matchemphys.2011.03.024 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:10 AU: Fang, Dao-Lai;Chen, Zhi-Dao;Wu, Bing-Cai;Yan, Yong;Zheng, Cui-Hong;
10:276:15 Single step synthesis of SnO2-SiO2 core-shell microcables
DOI:10.1016/j.jcrysgro.2011.06.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Filippo, Emanuela;Manno, Daniela;De Bartolomeo, A. R.;Serra, Antonio;
10:276:16 Nanoparticles of IrO2 or Sb-SnO2 increase the performance of iridium oxide DSA electrodes
DOI:10.1007/s10853-011-5958-x JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Marshall, Aaron T.;Haverkamp, Richard G.;
10:277:1 Synthesis, structural and morphological characteristics, magnetic and optical properties of Co doped ZnO nanoparticles
DOI:10.1016/j.ceramint.2013.10.030 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Mesaros, Amalia;Ghitulica, Cristina D.;Popa, Mihaela;Mereu, Raluca;Popa, Adriana;Petrisor, Traian, Jr.;Gabor, Mihai;Cadis, Adrian Ionut;Vasile, Bogdan S.;
10:277:2 Enhanced gas-sensing response by gamma ray irradiation: Ag/Ag2SnO3 nanoparticle-based sensor to ethanol, nitromethane and acetic acid
DOI:10.1039/c4tc01604a JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Yin, Kui;Liao, Fan;Zhu, Yan;Gao, Aimin;Wang, Tao;Shao, Mingwang;
10:277:3 Spectromicroscopy and photoluminescence analysis of prickly ZnO nanostructures
DOI:10.1007/s11051-010-0125-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:4 AU: Abyaneh, Majid Kazemian;Jafarkhani, Shiva;Gregoratti, Luca;Kulkani, Sulabha;
10:277:4 Investigation on the enhancement of ultraviolet emission in Ag-ZnO microrods
DOI:10.1016/j.apsusc.2013.06.147 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: He, Xin;Qian, Haolong;Zhi, Qisen;Zhang, Mei;Luo, Jianyi;He, Ruihui;Zeng, Qingguang;
10:277:5 An effective oxide shell-protected surface-enhanced Raman scattering (SERS) substrate: the easy route to Ag@AgxO-silicon nanowire films via surface doping
DOI:10.1039/c2tc00761d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:10 AU: Liao, Fan;Cheng, Liang;Li, Jing;Shao, Mingwang;Wang, Zhenghua;Lee, Shuit-Tong;
10:277:6 Synthesis and characterization of nanostructured zinc oxide particles synthesized by the pyrosol method
DOI:10.1007/s11051-012-1269-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:12 AU: Vasile, Otilia-Ruxandra;Andronescu, Ecaterina;Ghitulica, Cristina;Vasile, Bogdan Stefan;Oprea, Ovidiu;Vasile, Eugeniu;Trusca, Roxana;
10:277:7 Effect of ITO buffer layers on the structural, optical and electrical properties of ZnO multilayer thin films prepared by pulsed laser deposition technique
DOI:10.1016/j.solmat.2009.02.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:31 AU: Vinodkumar, R.;Lethy, K. J.;Beena, D.;Detty, A. P.;Navas, I.;Nayar, U. V.;Pillai, V. P. Mahadevan;Ganesan, V.;Reddy, V. R.;
10:277:8 Photon energy conversion via localized surface plasmons in ZnO/Ag/ZnO nanostructures
DOI:10.1016/j.apsusc.2012.02.130 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Xu, Tian Ning;Hu, Lian;Jin, Shu Qiang;Zhang, Bing Po;Cai, Xi Kun;Wu, Hui Zhen;Sui, Chen Hua;
10:277:9 A novel method to measure the generated voltage of a ZnO nanogenerator
DOI:10.1088/0957-4484/22/39/395204 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: van den Heever, T. Stanley;Buettner, Ulrich;Perold, Andwillem J.;
10:277:10 Comparison of Two Novel Solution-Based Routes for the Synthesis of Equiaxed ZnO Nanoparticles
DOI:10.1155/2011/390621 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:5 AU: Elen, K.;Kelchtermans, A.;Van den Rul, H.;Peeters, R.;Mullens, J.;Hardy, A.;Van Bael, M. K.;
10:278:1 Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells
DOI:10.1063/1.3465445 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:31 AU: Wong, L. M.;Chiam, S. Y.;Huang, J. Q.;Wang, S. J.;Pan, J. S.;Chim, W. K.;
10:278:2 High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2015.03.021 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Huo, Wenxing;Shi, Jin'an;Mei, Zengxia;Liu, Lishu;Li, Junqiang;Gu, Lin;Du, Xiaolong;Xue, Qikun;
10:278:3 Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates
DOI:10.1016/j.tsf.2012.06.043 JN:THIN SOLID FILMS PY:2012
TC:15 AU: De Los Santos Valladares, L.;Hurtado Salinas, D.;Bustamante Dominguez, A.;Acosta Najarro, D.;Khondaker, S. I.;Mitrelias, T.;Barnes, C. H. W.;Albino Aguiar, J.;Majima, Y.;
10:278:4 Fabrication of two domain Cu2O(011) films on MgO(001) by pulsed laser deposition
DOI:10.1016/j.apsusc.2013.01.019 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Fu, Yajun;Lei, Hongwei;Wang, Xuemin;Yan, Dawei;Cao, Linhong;Yao, Gang;Shen, Changle;Peng, Liping;Zhao, Yan;Wang, Yuying;Wu, Weidong;
10:278:5 Epitaxial growth of Cu2O and ZnO/Cu2O thin films on MgO by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2011.01.071 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Darvish, Davis S.;Atwater, Harry A.;
10:278:6 Growth of single-crystalline Cu2O (111) film on ultrathin MgO modified alpha-Al2O3 (0001) substrate by molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2012.05.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:9 AU: Li, Junqiang;Mei, Zengxia;Ye, Daqian;Liang, Huili;Liu, Yaoping;Du, Xiaolong;
10:278:7 Single phase, single orientation Cu2O (100) and (110) thin films grown by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2014.10.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:1 AU: Tolstova, Yulia;Wilson, Samantha S.;Atwater, Harry A.;
10:278:8 Structural and electrical properties of Cu2O thin films deposited on ZnO by metal organic chemical vapor deposition
DOI:10.1116/1.3491036 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:8 AU: Jeong, SeongHo;Aydil, Eray S.;
10:278:9 Annealing Effects of Sputtered Cu2O Nanocolumns on ZnO-Coated Glass Substrate for Solar Cell Applications
DOI:10.1155/2013/891365 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Chen, Lung-Chien;Wang, Chung-Chieh;Lu, Suz-Wei;
10:278:10 Preparation of Cu2O nanorods by a simple solvothermal method
DOI:10.1016/j.matchemphys.2010.01.036 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:10 AU: Wei, Mingzhen;Huo, Jianzhen;
10:278:11 Engineering of optically defect free Cu2O enabling exciton luminescence at room temperature
DOI:10.1364/OME.3.002072 JN:OPTICAL MATERIALS EXPRESS PY:2013
TC:4 AU: Li, Junqiang;Mei, Zenxia;Ye, Daqian;Liang, Huili;Liu, Lishu;Liu, Yaoping;Galeckas, Augustinas;Kuznetsov, Andrej Yu;Du, Xiaolong;
10:278:12 Synthesis of pure Cu2O thin layers controlled by in-situ conductivity measurements
DOI:10.1016/j.ceramint.2013.12.130 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Labidi, A.;Ouali, H.;Bejaoui, A.;Wood, T.;Lambert-Mauriat, C.;Maaref, M.;Aguir, K.;
10:278:13 Copper oxide based nanostructures for improved solar cell efficiency
DOI:10.1016/j.tsf.2014.09.056 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Bhaumik, A.;Haque, A.;Karnati, P.;Taufique, M. F. N.;Patel, R.;Ghosh, K.;
10:279:1 Growth by thermal evaporation of Al doped ZnS elongated micro- and nanostructures and their cathodoluminescence properties
DOI:10.1016/j.jallcom.2014.03.045 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Sotillo, B.;Fernandez, P.;Piqueras, J.;
10:279:2 Thermal growth and luminescence of wurtzite ZnS nanowires and nanoribbons
DOI:10.1016/j.jcrysgro.2012.04.002 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:8 AU: Sotillo, B.;Fernandez, P.;Piqueras, J.;
10:279:3 Observation of red emission in wurtzite ZnS nanoparticles and the investigation of phonon modes by Raman spectroscopy
DOI:10.1016/j.matchemphys.2011.05.073 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:8 AU: Radhu, S.;Vijayan, C.;
10:279:4 Green photoluminescence mechanism in ZnS nanostructures
DOI:10.1007/s10853-010-5141-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:13 AU: Chen, Haitao;Hu, Yipei;Zeng, Xianghua;
10:279:5 Cathodoluminescence of In doped ZnS nanostructures grown by vapor-solid method
DOI:10.1016/j.jallcom.2013.02.109 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Sotillo, B.;Fernandez, P.;Piqueras, J.;
10:279:6 Synthesis of luminescent zinc sulphide thin films by chemical bath deposition
DOI:10.1016/j.jallcom.2012.09.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Stefan, Maria;Popovici, Elisabeth-Jeanne;Pana, Ovidiu;Indrea, Emil;
10:279:7 Novel microwave assisted synthesis of ZnS nanomaterials
DOI:10.1088/0957-4484/24/4/045704 JN:NANOTECHNOLOGY PY:2013
TC:8 AU: Synnott, Damian W.;Seery, Michael K.;Hinder, Steven J.;Colreavy, John;Pillai, Suresh C.;
10:279:8 Growth of Ga-doped ZnS nanowires constructed by self-assembled hexagonal platelets with excellent photocatalytic properties
DOI:10.1088/0957-4484/21/45/455604 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Chen, Yen-Chih;Wang, Chao-Hung;Lin, Hsin-Ying;Li, Bi-Hua;Chen, Wei-Ting;Liu, Chuan-Pu;
10:279:9 Synthesis and characterization of GaN/ZnS core-shell nanowires
DOI:10.1016/j.matlet.2012.07.097 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Zhang, A. L.;Zhang, Z. H.;Tao, H. L.;Wu, R.;Li, J.;Sun, Y. F.;Jian, J. K.;
10:279:10 The light emission properties of ZnS:Mn nanoparticles
DOI:10.1016/j.tsf.2011.01.125 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Ma, Xiying;Song, Jingwei;Yu, Zhangsen;
10:279:11 One-dimensional protuberant optically active ZnO structure fabricated by oxidizing ZnS nanowires
DOI:10.1016/j.matlet.2010.04.021 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Do, V. Nam;Tuan, N. T.;Trung, D. Q.;Kien, N. D. T.;Chien, N. D.;Huy, P. T.;
10:279:12 Monitoring of incorporation of magnetic ions into II-VI semiconductor nanocrystals by optical and magneto-optical spectroscopy
DOI:10.1016/j.tsf.2012.10.127 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Savchuk, A. I.;Stolyarchuk, I. D.;Savchuk, T. A.;Smolinsky, M. M.;Shporta, O. A.;Shynkura, L. M.;
10:279:13 Synthesis and optical properties of ZnS hollow spheres from single source precursor
DOI:10.1016/j.materresbull.2010.04.001 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:7 AU: Song, Caixia;Yang, Maoli;Wang, Debao;Hu, Zhengshui;
10:279:14 Solvothermal synthesis, characterization and photoluminescence studies of ZnS:Eu nanocrystals
DOI:10.1016/j.optmat.2014.07.019 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Ashwini, K.;Yashaswini;Pandurangappa, C.;
10:280:1 Poole-Frenkel effect in sputter-deposited CuAlO2+x nanocrystals
DOI:10.1088/0957-4484/24/16/165705 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Banerjee, Arghya Narayan;Joo, Sang Woo;
10:280:2 Synthesis and photoelectric characterization of delafossite conducting oxides CuAlO2 laminar crystal thin films via sol-gel method
DOI:10.1016/j.apsusc.2010.04.032 JN:APPLIED SURFACE SCIENCE PY:2010
TC:20 AU: Ding, Juan;Sui, Yongming;Fu, Wuyou;Yang, Haibin;Liu, Shikai;Zeng, Yi;Zhao, Wenyan;Sun, Peng;Guo, Jin;Chen, Hui;Li, Minghui;
10:280:3 Optical and Wetting Properties of CuAlO2 Films Prepared by Radio Frequency Magnetron Sputtering
DOI:10.1111/j.1551-2916.2011.04943.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:7 AU: Li, Junlei;Wang, Xian;Shi, Shiwei;Song, Xueping;Lv, Jianguo;Cui, Jingbiao;Sun, Zhaoqi;
10:280:4 Synthesis and characterisation of nickel nanorods for cold cathode fluorescent lamps
DOI:10.1016/j.matchemphys.2012.05.066 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Feizi, E.;Scott, K.;Baxendale, M.;Pal, C.;Ray, A. K.;Wang, W.;Pang, Y.;Hodgson, S. N. B.;
10:280:5 Low-macroscopic field emission properties of wide bandgap copper aluminium oxide nanoparticles for low-power panel applications
DOI:10.1088/0957-4484/22/36/365705 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Banerjee, Arghya Narayan;Joo, Sang W.;
10:280:6 Effect of Al components on the properties of CuAlO2 thin films deposited by RF magnetron sputtering
DOI:10.1016/j.jallcom.2013.07.143 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Sun, Zhaoqi;Jiang, Xishun;Li, Junlei;He, Gang;Song, Xueping;
10:280:7 Quantum size effect in the photoluminescence properties of p-type semiconducting transparent CuAlO2 nanoparticles
DOI:10.1063/1.4768933 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Banerjee, Arghya Narayan;Joo, Sang Woo;Min, Bong-Ki;
10:280:8 Field emission characterization of vertically oriented uniformly grown nickel nanorod arrays on metal-coated silicon substrate
DOI:10.1063/1.3443577 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Joo, Sang Woo;Banerjee, Arghya Narayan;
10:280:9 FESEM studies of densely packed aligned nickel nanopillars on silicon substrate by electrochemical deposition through porous alumina membrane
DOI:10.1016/j.mseb.2010.06.016 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Joo, S. W.;Banerjee, A. N.;
10:280:10 ZnO nanorod array/CuAlO2 nanofiber heterojunction on Ni substrate: synthesis and photoelectrochemical properties
DOI:10.1088/0957-4484/22/29/295706 JN:NANOTECHNOLOGY PY:2011
TC:3 AU: Ding, Juan;Sui, Yongming;Fu, Wuyou;Yang, Haibin;Zhao, Bo;Li, Minghui;
10:280:11 Large field enhancement at electrochemically grown quasi-1D Ni nanostructures with low-threshold cold-field electron emission
DOI:10.1088/0957-4484/22/3/035702 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Banerjee, Arghya Narayan;Qian, Shizhi;Joo, Sang W.;
10:280:12 Blueshift in near-band-edge emission in Y3+-doped CuAlO2 nanofibers
DOI:10.1364/OME.4.002602 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Liu, Yin;Huang, Yanlin;Seo, Hyo Jin;Wu, Yiquan;
10:280:13 Effect of Cr doping on the optical-electrical property of CuAlO2 thin films derived by chemical solution deposition
DOI:10.1016/j.tsf.2010.12.025 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Jiang, H. F.;Zhu, X. B.;Lei, H. C.;Li, G.;Yang, Z. R.;Song, W. H.;Dai, J. M.;Sun, Y. P.;Fu, Y. K.;
10:280:14 On work function and characteristics of anomalous electrodeposited nickel-cobalt films
DOI:10.1016/j.tsf.2010.10.044 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Chung, C. K.;Chang, W. T.;Liao, M. W.;
10:280:15 Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide
DOI:10.1007/s11664-011-1508-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:9 AU: Liu, Chang;Morelli, Donald T.;
10:280:16 Sb-doped CuAlO2: widening of band gap and nonlinear J-E characteristics
DOI:10.1007/s10853-010-4975-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:2 AU: Ghosh, C. K.;Popuri, S. R.;Sarkar, D.;Chattopadhyay, K. K.;
10:280:17 Facile fabrication of scalable patterned nickel nanocone arrays for field emission applications
DOI:10.1116/1.4769349 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:0 AU: Shim, Ee Le;Yoo, Eunji;Kang, Chi Jung;Choi, Young Jin;Bae, Joonho;Lee, Sang Bum;Lee, Kyu Wang;
10:281:1 Microwave-assisted synthesis and optical properties of cuprous oxide micro/nanocrystals
DOI:10.1016/j.materresbull.2014.09.067 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Sun, Dandan;Du, Yi;Tian, Xiuying;Li, Zhongfu;Chen, Zhongtao;Zhu, Chaofeng;
10:281:2 Microwave assisted combustion synthesis of coupled ZnO-ZrO2 nanoparticles and their role in the photocatalytic degradation of 2,4-dichlorophenol
DOI:10.1016/j.ceramint.2013.11.006 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Sherly, E. D.;Vijaya, J. Judith;Selvam, N. Clament Sagaya;Kennedy, L. John;
10:281:3 A rapid, one step microwave assisted synthesis of nanosize zinc oxide
DOI:10.1016/j.matlet.2011.10.112 JN:MATERIALS LETTERS PY:2012
TC:15 AU: Bhatte, Kushal D.;Sawant, Dinesh N.;Watile, Rahul A.;Bhanage, Bhalchandra M.;
10:281:4 Microwave-assisted additive free synthesis of nanocrystalline zinc oxide
DOI:10.1016/j.powtec.2010.05.036 JN:POWDER TECHNOLOGY PY:2010
TC:18 AU: Bhatte, Kushal D.;Tambade, Pawan;Fujita, Shin-ichiro;Arai, Masahiko;Bhanage, Bhalchandra M.;
10:281:5 Multifunctional finishing of cotton fabric based on in situ fabrication of polymer-hybrid nanoparticles
DOI:10.1002/app.39634 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:3 AU: Zhang, Desuo;Zhang, Guangyu;Chen, Ling;Liao, Yanfen;Chen, Yuyue;Lin, Hong;
10:281:6 Shape controllable preparation and characterization of submicron lamellar and rod clusters of zinc oxide via conventional and microwave accelerated reaction methods
DOI:10.1016/j.matlet.2012.09.021 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Islam, Shafiqul;Karim, Mohammad Rezaul;Zaman, Md. Badruz;
10:281:7 In vitro efficacy and toxicology evaluation of silver nanoparticle-loaded gelatin hydrogel pads as antibacterial wound dressings
DOI:10.1002/app.35195 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:16 AU: Rattanaruengsrikul, Vichayarat;Pimpha, Nuttaporn;Supaphol, Pitt;
10:281:8 One pot green synthesis of nano sized zinc oxide by sonochemical method
DOI:10.1016/j.matlet.2012.03.012 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Bhatte, Kushal D.;Sawant, Dinesh N.;Pinjari, Dipak V.;Pandit, Aniruddha B.;Bhanage, Bhalchandra M.;
10:281:9 A rapid, one pot microwave assisted synthesis of nanosize cuprous oxide
DOI:10.1016/j.powtec.2012.11.006 JN:POWDER TECHNOLOGY PY:2013
TC:10 AU: Bhosale, Manohar A.;Bhatte, Kushal D.;Bhanage, Bhalchandra M.;
10:281:10 Optical Properties and Fabrication of Cuprous Oxide Nanoparticles by Microemulsion Method
DOI:10.1111/j.1551-2916.2011.04413.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:7 AU: Suzuki, Keigo;Tanaka, Nobuhiko;Ando, Akira;Takagi, Hiroshi;
10:281:11 Size-selected copper oxide nanoparticles synthesized by laser ablation
DOI:10.1007/s11051-012-0863-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:5 AU: Suzuki, Keigo;Tanaka, Nobuhiko;Ando, Akira;Takagi, Hiroshi;
10:281:12 In-situ synthesis of ZnO nanoparticles on bamboo pulp fabric
DOI:10.1016/j.matlet.2013.01.096 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zhang, Guangyu;Morikawa, Hideaki;Chen, Yuyue;Miura, Mikihiko;
10:281:13 A facile synthesis of ZnWO4 nanoparticles by microwave assisted technique and its application in photocatalysis
DOI:10.1016/j.materresbull.2012.12.002 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:12 AU: Garadkar, K. M.;Ghule, L. A.;Sapnar, K. B.;Dhole, S. D.;
10:282:1 A Template and Catalyst-Free Metal-Etching-Oxidation Method to Synthesize Aligned Oxide Nanowire Arrays: NiO as an Example
DOI:10.1021/nn1005396 JN:ACS NANO PY:2010
TC:24 AU: Wei, Zhi Peng;Arredondo, Miryam;Peng, Hai Yang;Zhang, Zhou;Guo, Dong Lai;Xing, Guo Zhong;Li, Yong Feng;Wong, Lai Mun;Wang, Shi Jie;Valanoor, Nagarajan;Wu, Tom;
10:282:2 Epitaxial Magnetic Oxide Nanocrystals Via Phase Decomposition of Bismuth Perovskite Precursors
DOI:10.1002/adfm.201201066 JN:ADVANCED FUNCTIONAL MATERIALS PY:2012
TC:11 AU: Bogle, Kashinath A.;Cheung, Jeffrey;Chen, Yong-Lun;Liao, Sheng-Chieh;Lai, Chih-Hung;Chu, Ying-Hao;Gregg, John M.;Ogale, Satishchandra B.;Valanoor, Nagarajan;
10:282:3 Growth temperature effect on the structural and magnetic properties of Fe3O4 films grown by the self-template method
DOI:10.1063/1.4890510 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Takahashi, R.;Misumi, H.;Lippmaa, M.;
10:282:4 Synthesis of Epitaxial Metal Oxide Nanocrystals via a Phase Separation Approach
DOI:10.1021/nn1010123 JN:ACS NANO PY:2010
TC:15 AU: Bogle, Kashinath A.;Anbusathaiah, Varatharajan;Arredondo, Miryam;Lin, Jiunn-Yuan;Chu, Ying-Hao;O'Neill, Christopher;Gregg, John M.;Castell, Martin R.;Nagarajan, Valanoor;
10:282:5 Attachment of nickel oxide nanoparticles on the surface of palygorskite nanofibers
DOI:10.1016/j.jcis.2012.06.029 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:11 AU: Huo, Chengli;Yang, Huaming;
10:282:6 Zinc-doped nickel oxide dendritic crystals with fast response and self-recovery for ammonia detection at room temperature
DOI:10.1039/c2jm34192a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:2 AU: Wang, Jian;Wei, Liangming;Zhang, Liying;Zhang, Jing;Wei, Hao;Jiang, Chuanhai;Zhang, Yafei;
10:282:7 Phase evolution of magnetite nanocrystals on oxide supports via template-free bismuth ferrite precursor approach
DOI:10.1063/1.4766748 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Cheung, Jeffrey;Bogle, Kashinath;Cheng, Xuan;Sullaphen, Jivika;Kuo, Chang-Yang;Chen, Ying-Jiun;Lin, Hong-Ji;Chen, Chien-Te;Yang, Jan-Chi;Chu, Ying-Hao;Valanoor, Nagarajan;
10:282:8 Big-Data Reflection High Energy Electron Diffraction Analysis for Understanding Epitaxial Film Growth Processes
DOI:10.1021/nn504730n JN:ACS NANO PY:2014
TC:1 AU: Vasudevan, Rama K.;Tselev, Alexander;Baddorf, Arthur P.;Kalinin, Sergei V.;
10:282:9 Long-range spontaneous structural ordering in barium stannate thin films
DOI:10.1063/1.3481364 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Takahashi, R.;Valset, K.;Folven, E.;Eberg, E.;Grepstad, J. K.;Tybell, T.;
10:282:10 Growth of InFeCoO4 thin films on SrTiO3 and MgO substrates
DOI:10.1016/j.jcrysgro.2010.05.001 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Matvejeff, M.;Lippmaa, M.;
10:283:1 Electrical and photoelectric properties of transparent Li-doped ZnO/ZnO homojunctions by pulsed laser deposition
DOI:10.1016/j.tsf.2013.05.125 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Yu, Shihui;Ding, Linghong;Zheng, Haiwu;Xue, Chuang;Chen, Li;Zhang, Weifeng;
10:283:2 Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency
DOI:10.1063/1.4879643 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Nian, Qiong;Zhang, Martin Y.;Schwartz, Bradley D.;Cheng, Gary J.;
10:283:3 Highly conductive and transparent alumina-doped ZnO films processed by direct pulsed laser recrystallization at room temperature
DOI:10.1063/1.3622645 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Zhang, Martin Y.;Cheng, Gary J.;
10:283:4 Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating
DOI:10.1063/1.4795763 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Yang, W. F.;Liu, Z. G.;Wu, Z. Y.;Hong, M. H.;Wang, C. F.;Lee, Alex Y. S.;Gong, H.;
10:283:5 Effect of injected spins with different polarized orientations on the superconductivity of La0.7Sr0.3MnO3/La1.85Sr0.15CuO4 thin films
DOI:10.1063/1.4829141 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Zhang, M. J.;Yin, Y. W.;Su, T. S.;Teng, M. L.;Zhang, D. L.;Li, X. G.;Zou, L. J.;
10:283:6 Transparent conductive Al-doped ZnO thin films grown at room temperature
DOI:10.1116/1.3565462 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:14 AU: Wang, Yuping;Lu, Jianguo;Bie, Xun;Gong, Li;Li, Xiang;Song, Da;Zhao, Xuyang;Ye, Wenyi;Ye, Zhizhen;
10:283:7 Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization
DOI:10.1063/1.4894861 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nian, Qiong;Zhang, Martin Y.;Wang, Yuefeng;Das, Suprem R.;Bhat, Venkataprasad S.;Huang, Fuqiang;Cheng, Gary J.;
10:283:8 Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization
DOI:10.1063/1.3702460 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Zhang, Martin Y.;Nian, Qiong;Cheng, Gary J.;
10:283:9 Optical and electrical properties of nanocrystal zinc oxide films prepared by dc magnetron sputtering at different sputtering pressures
DOI:10.1016/j.apsusc.2010.03.059 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: Tanusevski, Atanas;Georgieva, Verka;
10:283:10 Development of thickness measurement program for transparent conducting oxide thin films
DOI:10.1016/j.tsf.2010.03.047 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Mitsugi, Fumiaki;Matsuoka, Aya;Umeda, Yoshihiro;Ikegami, Tomoaki;
10:284:1 Effect of Sn2O3 doping on structural, optical and dielectric properties of ZnO ceramics
DOI:10.1016/j.mseb.2013.06.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:4 AU: Chaari, Mariem;Matoussi, Adel;
10:284:2 Visible-light-sensitive nanoscale Au-ZnO photocatalysts
DOI:10.1007/s11051-013-1606-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:3 AU: Kim, Ki-Joong;Kreider, Peter B.;Chang, Chih-Hung;Park, Chul-Min;Ahn, Ho-Geun;
10:284:3 Enhanced visible-light photocatalytic activity of Fe/ZnO for rhodamine B degradation and its photogenerated charge transfer properties
DOI:10.1016/j.apsusc.2014.06.151 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Yi, Shasha;Cui, Jiabao;Li, Shuo;Zhang, Lijing;Wang, Dejun;Lin, Yanhong;
10:284:4 Visible light-activated cadmium-doped ZnO nanostructured photocatalyst for the treatment of methylene blue dye
DOI:10.1007/s10853-011-6016-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:21 AU: Zhang, Dongfang;Zeng, Fanbin;
10:284:5 Synthesis, characterization, and catalytic application of Au/ZnO nanocomposites prepared by coprecipitation
DOI:10.1007/s10853-011-5503-y JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:12 AU: Donkova, B.;Vasileva, P.;Nihtianova, D.;Velichkova, N.;Stefanov, P.;Mehandjiev, D.;
10:284:6 Synthesis, Characterization, and Photocatalysis of ZnO and Er-Doped ZnO
DOI:10.1155/2013/372951 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Yu, Kai-sheng;Shi, Jian-ying;Zhang, Zai-li;Liang, Yong-mei;Liu, Wei;
10:284:7 Synthesis of carbon doped ZnO with a porous structure and its solar-light photocatalytic properties
DOI:10.1016/j.matlet.2013.08.081 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Ouyang Haibo;Huang Jian Feng;Li Cuiyan;Cao Liyun;Fei Jie;
10:284:8 Growth and enhanced optical properties of ZnO:S nanorods and multipodes
DOI:10.1016/j.matlet.2013.03.059 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Panda, N. R.;Acharya, B. S.;Nayak, P.;
10:284:9 Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters
DOI:10.1016/j.tsf.2013.01.078 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Kim, Won Mok;Kim, Jin Soo;Jeong, Jeung-hyun;Park, Jong-Keuk;Baik, Young-Jun;Seong, Tae-Yeon;
10:284:10 Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films
DOI:10.1016/j.apsusc.2010.06.045 JN:APPLIED SURFACE SCIENCE PY:2010
TC:17 AU: Kim, Y. H.;Jeong, J.;Lee, K. S.;Cheong, B.;Seong, T. -Y.;Kim, W. M.;
10:284:11 Direct relationship between lattice volume, bandgap, morphology and magnetization of transition metals (Cr, Mn and Fe)-doped ZnO nano structures
DOI:10.1016/j.actamat.2012.06.033 JN:ACTA MATERIALIA PY:2012
TC:10 AU: Ahmed, Faheem;Kumar, Shalendra;Arshi, Nishat;Anwar, M. S.;Heo, Si Nae;Koo, Bon Heun;
10:284:12 Thermoluminescence and decay studies on cerium doped ZnO nanopowders
DOI:10.1016/j.matlet.2012.12.094 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Panda, N. R.;Acharya, B. S.;Singh, Th. Basanta;Gartia, R. K.;
10:284:13 Thermal stability of hydrogen-doped AZO thin films for photovoltaic applications
DOI:10.1016/j.materresbull.2014.04.050 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Lee, Sooho;Park, Yongseob;Kim, Donguk;Baek, Dohyun;Yi, Junsin;Hong, Byungyou;Choi, Wonseok;Lee, Jaehyeong;
10:284:14 Electrical conductivity studies of Bi2O3-Li2O-ZnO-B2O3 glasses
DOI:10.1016/j.materresbull.2012.02.007 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Bale, Shashidhar;Rahman, Syed;
10:285:1 Characterization of ZnO coated polyester fabrics for UV protection
DOI:10.1016/j.apsusc.2013.04.084 JN:APPLIED SURFACE SCIENCE PY:2013
TC:12 AU: Broasca, G.;Borcia, G.;Dumitrascu, N.;Vrinceanu, N.;
10:285:2 Preparation of antibacterial coating based on in situ synthesis of ZnO/SiO2 hybrid nanocomposite on cotton fabric
DOI:10.1016/j.apsusc.2014.09.102 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Barani, Hossein;
10:285:3 Photocatalytic self-cleaning properties of cellulosic fibers modified by nano-sized zinc oxide
DOI:10.1016/j.tsf.2011.01.347 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Moafi, Nadi Fallah;Shojaie, Abdollah Fallah;Zanjanchi, Mohammad Ali;
10:285:4 ZnO and ZnTiO3 nanopowders for antimicrobial stone coating
DOI:10.1007/s00339-010-5658-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:19 AU: Ruffolo, S. A.;La Russa, M. F.;Malagodi, M.;Rossi, C. Oliviero;Palermo, A. M.;Crisci, G. M.;
10:285:5 Preparation and characterization of ZnO-deposited DBD plasma-treated PP packaging film with antibacterial activities
DOI:10.1016/j.apsusc.2013.03.026 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Paisoonsin, Sutida;Pornsunthorntawee, Orathai;Rujiravanit, Ratana;
10:285:6 Band gap coupling in photocatalytic activity in ZnO-TiO2 thin films
DOI:10.1007/s00339-012-6890-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:11 AU: Garcia-Ramirez, E.;Mondragon-Chaparro, M.;Zelaya-Angel, O.;
10:285:7 The comparison of photocatalytic activity of synthesized TiO2 and ZrO2 nanosize onto wool fibers
DOI:10.1016/j.apsusc.2010.02.022 JN:APPLIED SURFACE SCIENCE PY:2010
TC:23 AU: Moafi, Hadi Fallah;Shojaie, Abdollah Fallah;Zanjanchi, Mohammad Ali;
10:285:8 Development of film sensors based on ZnO nanoparticles for amine gas detection
DOI:10.1016/j.apsusc.2011.08.042 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Xia, Huiyun;Liu, Taihong;Gao, Lining;Yan, Luke;Wu, Junwen;
10:285:9 Photoactive Behavior of Polyacrylonitrile Fibers Based on Silver and Zirconium Co-Doped Titania Nanocomposites: Synthesis, Characterization, and Comparative Study of Solid-Phase Photocatalytic Self-Cleaning
DOI:10.1002/app.37664 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:0 AU: Moafi, Hadi Fallah;Shojaie, Abdollah Fallah;Zanjanchi, Mohammad Ali;
10:285:10 Photocatalytic and antimicrobial Ag/ZnO nanocomposites for functionalization of textile fabrics
DOI:10.1016/j.jallcom.2014.04.138 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Ibanescu (Busila), Mariana;Musat, Viorica;Textor, Torsten;Badilita, Viorel;Mahltig, Boris;
10:285:11 The Comparative Study of Photocatalytic Self-Cleaning Properties of Synthesized Nanoscale Titania and Zirconia onto Polyacrylonitrile Fibers
DOI:10.1002/app.32463 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:5 AU: Moafi, Hadi Fallah;Shojaie, Abdollah Fallah;Zanjanchi, Mohammad Ali;
10:285:12 Nanophotonic, Electro-and Magnetoactive Nanocomposites for Printing and Packaging
DOI:10.1080/15421406.2013.873608 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Sarapulova, Olha;Sherstiuk, Valentyn;
10:285:13 Efficacy of nanolime in restoration procedures of salt weathered limestone rock
DOI:10.1007/s00339-013-7982-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:4 AU: Ruffolo, Silvestro A.;La Russa, Mauro F.;Aloise, Piergiorgio;Belfiore, Cristina M.;Macchia, Andrea;Pezzino, Antonino;Crisci, Gino M.;
10:285:14 Characterization of ZnO coated polyester fabrics for UV protection (vol 279, pg 272, 2013)
DOI:10.1016/j.apsusc.2013.06.071 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Broasca, G.;Borcia, G.;Dumitrascu, N.;Vrinceanu, N.;
10:285:15 Semiconductor-Assisted Self-Cleaning Polymeric Fibers Based on Zinc Oxide Nanoparticles
DOI:10.1002/app.34179 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:4 AU: Moafi, Hadi Fallah;Shojaie, Abdollah Fallah;Zanjanchi, Mohammad Ali;
10:285:16 Organic-ligand-assisted hydrothermal synthesis of ultrafine and hydrophobic ZnO nanoparticles
DOI:10.1557/JMR.2010.0037 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:6 AU: Mousavand, Tahereh;Ohara, Satoshi;Naka, Takashi;Umetsu, Mitsuo;Takami, Seiichi;Adschiri, Tadafumi;
10:285:17 UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles
DOI:10.1007/s11051-011-0499-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:3 AU: Dadvar, Saeed;Tavanai, Hossein;Morshed, Mohammad;
10:285:18 Synthesis of whorl shaped zinc oxide nanostructure crystals by simple wet synthesis route
DOI:10.1016/j.matlet.2013.08.090 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Bhardwaj, Deepesh;Sharma, Pankaj;Khare, Purnima S.;
10:286:1 Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects
DOI:10.1063/1.4823779 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Mukherjee, Bablu;Tok, Eng Soon;Sow, Chorng Haur;
10:286:2 Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity
DOI:10.1039/c2jm35006h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Mukherjee, Bablu;Hu, Zhibin;Zheng, Minrui;Cai, Yongqing;Feng, Yuan Ping;Tok, Eng Soon;Sow, Chorng Haur;
10:286:3 Field emission from GeSe2 nanowalls
DOI:10.1063/1.3569147 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Zhang, Yanjun;Li, Hui;Jiang, Li;Liu, Huibiao;Shu, Chunying;Li, Yuliang;Wang, Chunru;
10:286:4 Synthesis of GeSe2 Nanobelts Using Thermal Evaporation and Their Photoelectrical Properties
DOI:10.1155/2014/310716 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Zhang, Lijie;Yu, Hongfei;Yang, Yun;Yang, Keqin;Dong, Youqing;Huang, Shaoming;Dai, Ning;Zhu, Da-Ming;
10:286:5 Synthesis, characterization and electrical properties of hybrid Zn2GeO4-ZnO beaded nanowire arrays
DOI:10.1016/j.jcrysgro.2012.02.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Mukherjee, Bablu;Varghese, Binni;Zheng, Minrui;Karthik, K. R. G.;Mathews, Nripan;Mhaisalkar, Subodh G.;Tok, Eng Soon;Sow, Chorng Haur;
10:286:6 Probing the photoresponse of individual Nb2O5 nanowires with global and localized laser beam irradiation
DOI:10.1088/0957-4484/22/11/115202 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Tamang, Rajesh;Varghese, Binni;Mhaisalkar, Subodh G.;Tok, Eng Soon;Sow, Chorng Haur;
10:286:7 Electrical and photoresponse properties of Co3O4 nanowires
DOI:10.1063/1.4712497 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Varghese, Binni;Mukherjee, Bablu;Karthik, K. R. G.;Jinesh, K. B.;Mhaisalkar, S. G.;Tok, Eng Soon;Sow, Chorng Haur;
10:286:8 Biocompatible Single-Crystal Selenium Nanobelt Based Nanodevice as a Temperature-Tunable Photosensor
DOI:10.1155/2012/384671 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Niu, Yongshan;Qin, Aimiao;Song, Wei;Wang, Menghang;Gu, Xuenan;Zhang, Yangfei;Yu, Min;Zhao, Xiaoguang;Dai, Ming;Yan, Ling;Li, Zhou;Fan, Yubo;
10:286:9 Localized photo-induced voltage with controlled polarity in single K enriched MoO3 nanobundle
DOI:10.1088/0957-4484/23/47/475204 JN:NANOTECHNOLOGY PY:2012
TC:0 AU: Hu, Zhibin;Tok, Eng Soon;Sow, Chorng Haur;
10:287:1 First-principles study of electronic structure and optical properties of (Zr-Al)-codoped ZnO
DOI:10.1016/j.commatsci.2013.09.021 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Luo, Jin-Hua;Liu, Qun;Yang, Li-Na;Sun, Zhu-Zhu;Li, Ze-Sheng;
10:287:2 Enhanced blue-green emission and ethanol sensing of Co-doped ZnO nanocrystals prepared by a solvothermal route
DOI:10.1007/s00339-009-5489-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:42 AU: Li, Jin;Fan, Huiqing;Jia, Xiaohua;Yang, Weiwei;Fang, Pinyang;
10:287:3 First-principles study of dopants and defects in S-doped ZnO and its effect on photocatalytic activity
DOI:10.1016/j.commatsci.2012.01.016 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:6 AU: Zhang, Haifeng;Tao, Zhuo;Xu, Wenguo;Lu, Shixiang;Yuan, Feng;
10:287:4 Synthesis of 1D and heavily doped Zn1-xCoxO six-prism nanorods: improvement of blue-green emission and room temperature ferromagnetism
DOI:10.1039/c1jm12721g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:6 AU: Wang, Tao;Liu, Yanmei;Xu, Yangguang;He, Gang;Li, Guang;Lv, Jianguo;Wu, Mingzai;Sun, Zhaoqi;Fang, Qingqing;Ma, Yongqing;Li, Junlei;
10:287:5 Ferromagnetic properties, electronic structures, and formation energies of Zn vacancy monodoping and (Zn vacancy, Li) codoped ZnO by first principles study
DOI:10.1016/j.commatsci.2011.02.022 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2011
TC:11 AU: Chen, Yifei;Song, Qinggong;Yan, Huiyu;
10:287:6 Ab initio intraband contributions to the optical properties of metals
DOI:10.1103/PhysRevB.82.035104 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Cazzaniga, Marco;Caramella, Lucia;Manini, Nicola;Onida, Giovanni;
10:287:7 First-principles study of doping effect on the phase transition of zinc oxide with transition metal doped
DOI:10.1016/j.jallcom.2012.06.091 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:12 AU: Wu, Liang;Hou, Tingjun;Wang, Yi;Zhao, Yanfei;Guo, Zhenyu;Li, Youyong;Lee, Shuit-Tong;
10:287:8 Controlled synthesis and gas sensing properties of In2O3 with different phases from urchin-like InOOH microspheres
DOI:10.1016/j.materresbull.2014.01.036 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Song, Peng-Yuan;Zhang, Wei-De;
10:287:9 Enhanced ethanol gas sensing properties of SnO2 nanobelts functionalized with Au
DOI:10.1016/j.ceramint.2012.05.043 JN:CERAMICS INTERNATIONAL PY:2012
TC:8 AU: Jin, Changhyun;Kim, Hyunsu;Park, Sunghoon;Kim, Hyoun Woo;Lee, Sangmin;Lee, Chongmu;
10:287:10 First-principles study of electronic structures and photocatalytic activity of low-Miller-index surfaces of ZnO
DOI:10.1063/1.4775766 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Zhang, Haifeng;Lu, Shixiang;Xu, Wenguo;Yuan, Feng;
10:287:11 Magnetic properties of high Li doped ZnO sol-gel thin films
DOI:10.1016/j.materresbull.2013.10.015 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Vettumperumal, R.;Kalyanaraman, S.;Santoshkumar, B.;Thangavel, R.;
10:287:12 Dependence of the selectivity of SnO2 nanorod gas sensors on functionalization materials
DOI:10.1007/s00339-014-8514-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Park, Sunghoon;Kim, Soohyun;Ko, Hyunsung;Lee, Chongmu;
10:288:1 Synthesis of nickel oxide nanoparticles using pulsed laser ablation in liquids and their optical characterization
DOI:10.1016/j.apsusc.2012.03.147 JN:APPLIED SURFACE SCIENCE PY:2012
TC:24 AU: Gondal, M. A.;Saleh, Tawfik A.;Drmosh, Q. A.;
10:288:2 Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction
DOI:10.1016/j.jcrysgro.2012.10.037 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:11 AU: Jung, Byung Oh;Kwon, Yong Hun;Seo, Dong Ju;Lee, Dong Seon;Cho, Hyung Koun;
10:288:3 Preparation and characterization of NiO, ZnO and NiO-ZnO composite nanofibers by electrospinning method
DOI:10.1016/j.matchemphys.2014.09.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Dorneanu, Petronela Pascariu;Airinei, Anton;Olaru, Niculae;Homocianu, Mihaela;Nica, Valentin;Doroftei, Florica;
10:288:4 Sonochemical synthesis, size controlling and gas sensing properties of NiO nanoparticles
DOI:10.1016/j.apsusc.2010.11.174 JN:APPLIED SURFACE SCIENCE PY:2011
TC:24 AU: Aslani, Alireza;Oroojpour, Vahid;Fallahi, Mehrab;
10:288:5 Spectroscopic characterization approach to study surfactants effect on ZnO2 nanoparticles synthesis by laser ablation process
DOI:10.1016/j.apsusc.2010.02.068 JN:APPLIED SURFACE SCIENCE PY:2010
TC:25 AU: Drmosh, Q. A.;Gondal, M. A.;Yamani, Z. H.;Saleh, T. A.;
10:288:6 Ultrasound-assisted synthesis of mesoporous beta-Ni(OH)(2) and NiO nano-sheets using ionic liquids
DOI:10.1039/c2jm32849f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:17 AU: Alammar, Tarek;Shekhah, Osama;Wohlgemuth, Jonas;Mudring, Anja-Verena;
10:288:7 Preparation of a MWCNT/ZnO nanocomposite and its photocatalytic activity for the removal of cyanide from water using a laser
DOI:10.1088/0957-4484/21/49/495705 JN:NANOTECHNOLOGY PY:2010
TC:17 AU: Saleh, Tawfik A.;Gondal, M. A.;Drmosh, Q. A.;
10:288:8 Barium peroxide nanoparticles: synthesis, characterization and their use for actuating the luminol chemiluminescence
DOI:10.1039/c3tc32273d JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Gomes, Raquel;Roming, Sabine;Przybilla, Andreas;Meier, Michael A. R.;Feldmann, Claus;
10:288:9 Growth and properties of transparent p-NiO/n-ITO (In2O3:Sn) p-n junction thin film diode
DOI:10.1016/j.tsf.2011.01.255 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Mistry, B. V.;Bhatt, P.;Bhavsar, K. H.;Trivedi, S. J.;Trivedi, U. N.;Joshi, U. S.;
10:288:10 Fabricate Heterojunction Diode by Using the Modified Spray Pyrolysis Method to Deposit Nickel-Lithium Oxide on Indium Tin Oxide Substrate
DOI:10.1021/am400763m JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:2 AU: Wu, Chia-Ching;Yang, Cheng-Fu;
10:288:11 Morphology and properties of NiO electrodes for p-DSSCs based on hydrothermal method
DOI:10.1016/j.apsusc.2013.03.108 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Wu, Qishuang;Shen, Yue;Li, Linyu;Cao, Meng;Gu, Feng;Wang, Linjun;
10:288:12 Preparation of PbS and PbO nanopowders from new Pb(II)(saccharine) coordination polymers
DOI:10.1016/j.apsusc.2014.03.088 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Aslani, Alireza;Musevi, Seyid Javad;Sahin, Ertan;Yilmaz, Veysel T.;
10:288:13 Sonochemical preparation of TiO2 nanoparticles in the ionic liquid 1-(3-hydroxypropyl)-3-methylimidazolium-bis(trifluoromethylsulfonyl)amid e
DOI:10.1016/j.matchemphys.2009.10.029 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:20 AU: Alammar, Tarek;Birkner, Alexander;Shekhah, Osama;Mudring, Anja-Verena;
10:288:14 Solvothermal synthesis, characterization and optical properties of ZnO, ZnO-MgO and ZnO-NiO, mixed oxide nanoparticles
DOI:10.1016/j.apsusc.2010.12.135 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Aslani, Alireza;Arefi, Mohammad Reza;Babapoor, Aziz;Amiri, Asghar;Beyki-Shuraki, Khalil;
10:288:15 Field-emission properties of individual GaN nanowires grown by chemical vapor deposition
DOI:10.1063/1.3685903 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Choi, Yongho;Michan, Mario;Johnson, Jason L.;Naieni, Ali Kashefian;Ural, Ant;Nojeh, Alireza;
10:288:16 Structural and vibrational properties of hydrothermally grown ZnO2 nanoparticles
DOI:10.1016/j.jcrysgro.2010.12.057 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Escobedo-Morales, A.;Esparza, R.;Garcia-Ruiz, A.;Aguilar, A.;Rubio-Rosas, E.;Perez, R.;
10:289:1 ZnO nanoswords and nanopills: Hydrothermal synthesis, characterization and optical properties
DOI:10.1016/j.ceramint.2013.06.090 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Moulahi, A.;Sediri, F.;
10:289:2 Oriented growth of urchin-like zinc oxide micro/nano-scale structures in aqueous solution
DOI:10.1016/j.materresbull.2012.01.006 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Hou, Kun;Gao, Ziwei;Da, Min;Li, Zimei;Sun, Huaming;Li, Jinling;Xie, Yunhui;Kang, Taoying;Mijit, Alimjan;
10:289:3 Synthesis of sea urchin-like ZnO by a simple soft template method and its photoelectric properties
DOI:10.1016/j.mssp.2014.09.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Zhou, Yi;Li, Mengyao;Wang, Yutang;Yi, Qin;Li, Xuzhi;Liu, Ce;
10:289:4 Synthesis and microstructural properties of ZnO nanoparticles prepared by precipitation method
DOI:10.1016/j.renene.2012.08.076 JN:RENEWABLE ENERGY PY:2013
TC:33 AU: Raoufi, Davood;
10:289:5 Low-temperature synthesis of ZnO nanorods using a seed layer of zinc acetate/sodium dodecyle sulfate nanocomposite
DOI:10.1016/j.matlet.2009.11.062 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Ueno, Naoyuki;Maruo, Takanori;Nishiyama, Norikazu;Egashira, Yasuyuki;Ueyama, Korekazu;
10:289:6 Transparent electrode with ZnO nanoparticles in tandem organic solar cells
DOI:10.1016/j.solmat.2010.04.020 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:13 AU: Lee, Donggu;Bae, Wan Ki;Park, Insun;Yoon, Do Y.;Lee, Seonghoon;Lee, Changhee;
10:289:7 Well aligned ZnO nanorods growth on the gold coated glass substrate by aqueous chemical growth method using seed layer of Fe3O4 and Co3O4 nanoparticles
DOI:10.1016/j.jcrysgro.2013.01.009 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Ibupoto, Z. H.;Khun, K.;Lu, Jun;Liu, Xianjie;AlSalhi, M. S.;Atif, M.;Ansari, Anees A.;Willander, M.;
10:289:8 Architecture of ZnO nanosheets and nanochips via zinc oxalato-hydrazinate complex
DOI:10.1007/s11051-014-2450-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Thorat, Jyoti H.;Chaudhari, Prasad D.;Tamboli, Mohaseen S.;Arbuj, Sudhir S.;Patil, Dilip B.;Kale, Bharat B.;
10:289:9 Low-temperature synthesis of ZnO nanorods using organic-inorganic composite as a seed layer
DOI:10.1016/j.tsf.2012.02.054 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Ueno, Naoyuki;Nakanishi, Kouji;Ohta, Toshiaki;Egashira, Yasuyuki;Nishiyama, Norikazu;
10:289:10 Rapid chemical synthesis and optical properties of ZnO ellipsoidal nanostructures
DOI:10.1016/j.apt.2010.02.010 JN:ADVANCED POWDER TECHNOLOGY PY:2010
TC:11 AU: Pu, Xipeng;Zhang, Dafeng;Yi, Xiujie;Shao, Xin;Li, Wenzhi;Sun, Mingyan;Li, Lei;Qian, Xianhua;
10:290:1 Synthesis and photocatalysis properties of ZnO structures with different morphologies via hydrothermal method
DOI:10.1016/j.apsusc.2011.01.105 JN:APPLIED SURFACE SCIENCE PY:2011
TC:44 AU: Xie, Juan;Wang, Hu;Duan, Ming;Zhang, Liehui;
10:290:2 Facile synthesis of ZnO micro-nanostructures with controllable morphology and their applications in dye-sensitized solar cells
DOI:10.1016/j.apsusc.2012.07.160 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Zhou, Yi;Li, Dang;Zhang, Xiangchao;Chen, Jianlin;Zhang, Shiying;
10:290:3 Sol-gel derived nanostructure undoped and cobalt doped ZnO: Structural, optical and electrical studies
DOI:10.1016/j.jallcom.2013.01.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:17 AU: Caglar, Yasemin;
10:290:4 Simple hydrothermal preparation of new type of sea urchin-like hierarchical ZnO micro/nanostructures and their formation mechanism
DOI:10.1016/j.ceramint.2014.03.012 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Zhou, Yi;Liu, Ce;Zhong, Xian;Wu, Hongyan;Li, Mengyao;Wang, Liping;
10:290:5 Fabrication and optical properties of needle-like ZnO array by a simple hydrothermal process
DOI:10.1016/j.matlet.2011.08.071 JN:MATERIALS LETTERS PY:2012
TC:20 AU: You, Tiangui;Yan, Junfeng;Zhang, Zhiyong;Li, Jun;Tian, Jiangxiao;Yun, Jiangni;Zhao, Wu;
10:290:6 Hydrothermal Synthesis of Different Zinc Oxide Nanostructures: Growth, Structure and Gas Sensing Properties
DOI:10.2320/matertrans.M2012203 JN:MATERIALS TRANSACTIONS PY:2012
TC:1 AU: Wang, Ping;Liu, Dong-yan;Li, Dong-sheng;
10:290:7 On thickness and annealing dependence of optical properties of Te-67.5 Ga-2.5 As-30 thin film as optoelectronic material
DOI:10.1016/j.jallcom.2012.11.001 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Abd-Elrahman, Mostafa. I.;Hafiz, Mohmed. M.;
10:290:8 Switching Phenomena of Amorphous Ga5Ge15Te80 Chalcogenide Thin Films for Phase-Change Memories
DOI:10.1007/s11664-012-2152-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:0 AU: Sakr, G. B.;
10:290:9 Crystallization behavior of e-beam evaporated Ga5Ge15Te80 thin films
DOI:10.1016/j.jnoncrysol.2011.05.013 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:2 AU: El-Gendy, Y. A.;Sakr, G. B.;
10:290:10 Pulsed electrical discharge synthesis of red photoluminescence zinc oxide nanoparticles
DOI:10.1007/s11051-014-2611-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Su, S. S.;Chang, I. T. H.;Kuo, W. C. H.;Price, D.;Pikramenou, Z.;Lead, J.;
10:291:1 Influence of working pressure on ZnO:Al films from tube targets for silicon thin film solar cells
DOI:10.1016/j.tsf.2010.02.065 JN:THIN SOLID FILMS PY:2010
TC:30 AU: Zhu, H.;Huepkes, J.;Bunte, E.;Gerber, A.;Huang, S. M.;
10:291:2 Influence of oxygen and argon flow on properties of aluminum-doped zinc oxide thin films prepared by magnetron sputtering
DOI:10.1016/j.tsf.2014.07.021 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Zhu, Hua;Wang, Hemei;Wan, Wenqiong;Yu, Shijin;Feng, XiaoWei;
10:291:3 Oxygen influence on sputtered high rate ZnO:Al films from dual rotatable ceramic targets
DOI:10.1016/j.apsusc.2010.02.057 JN:APPLIED SURFACE SCIENCE PY:2010
TC:19 AU: Zhu, H.;Huepkes, J.;Bunte, E.;Huang, S. M.;
10:291:4 Preparation and characterization of the ZnO:Al/Fe65Co35/ZnO:Al multifunctional films
DOI:10.1007/s00339-011-6679-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:0 AU: Wang, L. S.;Liu, S. J.;Guo, H. Z.;Chen, Y.;Yue, G. H.;Peng, D. L.;Hihara, T.;Sumiyama, K.;
10:291:5 Sol-gel synthesis, structure and magnetic properties of Mn-doped ZnO diluted magnetic semiconductors
DOI:10.1016/j.mseb.2011.07.007 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:14 AU: Jiang, Yingjing;Wang, Wei;Jing, Chengbin;Cao, Chunyue;Chu, Junhao;
10:291:6 Reactive sputtering of ZnO:Al thin films from rotatable dual metallic targets
DOI:10.1016/j.apsusc.2012.07.080 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Zhu, H.;Huepkes, J.;Bunte, E.;Huang, S. M.;
10:291:7 Influence of substrate temperature on surface textured ZnO:Al films etched with NaOH solution
DOI:10.1016/j.apsusc.2011.04.093 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Wang, Ying;Gu, Yousong;Peng, Shou;Ding, Wanyu;Wang, Hualin;Chai, Weiping;
10:291:8 Sputtering of ZnO:Al films from dual tube targets with tilted magnetrons
DOI:10.1016/j.tsf.2010.10.072 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Zhu, H.;Bunte, E.;Huepkes, J.;Huang, S. M.;
10:291:9 A Novel Al-Y Codoped ZnO Thin Film as Anode for Organic Light Emitting Diode
DOI:10.1080/10584587.2013.795831 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Wang, Na-Fu;Tsai, Yu-Zen;Tseng, Mei-Rurng;Hsu, Feng-Hao;
10:291:10 X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates
DOI:10.1016/j.tsf.2010.04.037 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Conchon, F.;Renault, P. O.;Goudeau, P.;Le Bourhis, E.;Sondergard, E.;Barthel, E.;Grachev, S.;Gouardes, E.;Rondeau, V.;Gy, R.;Lazzari, R.;Jupille, J.;Brun, N.;
10:291:11 Optical and magnetic properties of Ni-implanted and post-annealed ZnO thin films
DOI:10.1007/s00339-011-6314-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Okay, C.;Rameev, B. Z.;Guler, S.;Khaibullin, R. I.;Khakimova, R. R.;Osin, Y. N.;Akdogan, N.;Gumarov, A. I.;Nefedov, A.;Zabel, H.;Aktas, B.;
10:291:12 Ethyl acetoacetate ligand distribution in the course of titanium n-butoxide chelation
DOI:10.1016/j.matchemphys.2014.06.059 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Kurajica, S.;Skoric, I.;Lozic, I.;Mandic, V.;
10:292:1 Scaling Dopant States in a Semiconducting Nanostructure by Chemically Resolved Electron Energy-Loss Spectroscopy: A Case Study on Co-Doped ZnO
DOI:10.1021/ja100912k JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:28 AU: Wang, Xuefeng;Song, Fengqi;Chen, Qian;Wang, Tingyu;Wang, Jinlan;Liu, Peng;Shen, Mingrong;Wan, Jianguo;Wang, Guanghou;Xu, Jian-Bin;
10:292:2 Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition
DOI:10.1088/0957-4484/21/38/385705 JN:NANOTECHNOLOGY PY:2010
TC:16 AU: Chang, Yuan-Ming;Jian, Sheng-Rui;Lee, Hsin-Yi;Lin, Chih-Ming;Juang, Jenh-Yih;
10:292:3 Piezomagnetic behavior of Co-doped ZnO nanoribbons
DOI:10.1103/PhysRevB.84.155309 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Miwa, R. H.;Schmidt, T. M.;Fazzio, A.;
10:292:4 Cu related doublets green band emission in ZnO:Cu thin films
DOI:10.1063/1.3516459 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Liu, Yuanda;Liang, Hongwei;Xu, Lu;Zhao, Jianze;Bian, Jiming;Luo, Yingmin;Liu, Yang;Li, Wancheng;Wu, Guoguang;Du, Guotong;
10:292:5 A facile method for the synthesis of tapered ZnO:Cu nanorod arrays and its secondary growth
DOI:10.1016/j.jcrysgro.2012.04.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Huang, Jun;Hu, Liang;Zhang, Honghai;Zhang, Jie;Yang, Xiaopeng;Li, Dehui;Zhu, Liping;Ye, Zhizhen;
10:292:6 Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet
DOI:10.1103/PhysRevB.81.195413 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Schmidt, T. M.;Miwa, R. H.;Fazzio, A.;
10:292:7 Magnetism of Co doped graphitic ZnO layers adsorbed on Si and Ag surfaces
DOI:10.1063/1.4823733 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Fernandes, Marcelo;Schmidt, Tome M.;
10:292:8 Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si, (111) heterojunction grown by atomic layer deposition
DOI:10.1063/1.3511284 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Ku, Ching-Shun;Huang, Jheng-Ming;Cheng, Ching-Yuan;Lin, Chih-Ming;Lee, Hsin-Yi;
10:292:9 Epitaxial growth of thin films and nanodots of ZnO on Si(111) by pulsed laser deposition
DOI:10.1063/1.3698470 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Lee, Sung Kyun;Son, Jong Yeog;
10:292:10 Synthesis and electrical and magnetic properties of Mn-doped SnO2 nanowires
DOI:10.1063/1.3650458 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Chi, Junhong;Ge, Honglei;Wang, Juan;Zuo, Yalu;Zhang, Li;
10:292:11 Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure
DOI:10.1557/jmr.2011.71 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:3 AU: Xu, Hai Jun;Su, Lei;Chan, Yu Fei;Sun, Xiao Ming;
10:292:12 Structure and ferromagnetism in vanadium-doped LiNbO3
DOI:10.1063/1.4745053 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Sheng, P.;Zeng, F.;Tang, G. S.;Pan, F.;Yan, W. S.;Hu, F. C.;
10:292:13 Tunable photoluminescence and photoconductivity in ZnO one-dimensional nanostructures with a second below-gap beam
DOI:10.1063/1.3590152 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Shih, H. Y.;Chen, Y. T.;Huang, N. H.;Wei, C. M.;Chen, Y. F.;
10:293:1 Sb2O3 nanobelt networks for excellent visible-light-range photodetectors
DOI:10.1088/0957-4484/22/16/165704 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Li, L.;Zhang, Y. X.;Fang, X. S.;Zhai, T. Y.;Liao, M. Y.;Wang, H. Q.;Li, G. H.;Koide, Y.;Bando, Y.;Golberg, D.;
10:293:2 Study of luminescence and optical resonances in Sb2O3 micro- and nanotriangles
DOI:10.1007/s11051-012-1215-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Cebriano, Teresa;Mendez, Bianchi;Piqueras, Javier;
10:293:3 Sb2O3 microrods: self-assembly phenomena, luminescence and phase transition
DOI:10.1007/s11051-013-1667-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Cebriano, Teresa;Mendez, Bianchi;Piqueras, Javier;
10:293:4 Micro- and nanostructures of Sb2O3 grown by evaporation-deposition: Self assembly phenomena, fractal and dendritic growth
DOI:10.1016/j.matchemphys.2012.06.024 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:7 AU: Cebriano, T.;Mendez, B.;Piqueras, J.;
10:293:5 Structure and properties of low-phonon antimony glasses and nano glass-ceramics in K2O-B2O3-Sb2O3 system
DOI:10.1016/j.jnoncrysol.2010.01.026 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:15 AU: Som, Tirtha;Karmakar, Basudeb;
10:293:6 Synthesis of micro-sized Sb2O3 hierarchical structures by carbothermal reduction method
DOI:10.1016/j.matlet.2010.09.084 JN:MATERIALS LETTERS PY:2011
TC:12 AU: Fan, Gaochao;Huang, Zaiyin;Chai, Chunfang;Liao, Dankui;
10:293:7 Gram-scale synthesis and optical properties of Sb2O3 octahedron microcrystals
DOI:10.1016/j.matlet.2012.01.119 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Zhang, Lei;Pan, Cheng-Ling;Liu, Yin;
10:293:8 Study of mechanical resonances of Sb2O3 micro- and nanorods
DOI:10.1088/0957-4484/25/23/235701 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Cebriano, T.;Ortega, Y.;Hidalgo, P.;Maestre, D.;Mendez, B.;Piqueras, J.;
10:293:9 Review on oxides of antimony nanoparticles: synthesis, properties, and applications
DOI:10.1007/s10853-010-4849-x JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:7 AU: Chin, Hui Shun;Cheong, Kuan Yew;Razak, Khairunisak Abdul;
10:293:10 Hydrothermal synthesis of Sb2O3 nanorod-bundles via self-assembly assisted oriented attachment
DOI:10.1016/j.apsusc.2011.01.124 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Wang, Qingyao;Yang, Xiuchun;Hou, Junwei;Huang, Min;Zhao, Yuhua;
10:293:11 Controllable synthesis and formation mechanism of bow-tie-like Sb2O3 nanostructures via a surfactant-free solvothermal route
DOI:10.1016/j.jallcom.2010.01.064 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:16 AU: Ge, Shengsong;Wang, Qingyao;Li, Jiayuan;Shao, Qian;Wang, Xiaojie;
10:293:12 Effect of process parameters on size, shape, and distribution of Sb2O3 nanoparticles
DOI:10.1007/s10853-011-5444-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:2 AU: Chin, Hui Shun;Cheong, Kuan Yew;Razak, Khairunisak Abdul;
10:293:13 Novel organo-colloidal synthesis, optical properties, and structural analysis of antimony sesquioxide nanoparticles
DOI:10.1007/s11051-012-1347-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:2 AU: Validzic, Ivana Lj.;Abazovic, Nadica D.;Mitric, Miodrag;Lalic, Milan V.;Popovic, Zoran S.;Vukajlovic, Filip R.;
10:293:14 Transverse-microcavity modulation of photoluminescence from GaN nanowires
DOI:10.1063/1.3488018 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Long, J. P.;Flynn, R. A.;Vurgaftman, I.;Simpkins, B. S.;Maekinen, A. J.;Mastro, M. A.;Pehrsson, P. E.;
10:293:15 Controlled synthesis of Sb2O3 nanoparticles by chemical reducing method in ethylene glycol
DOI:10.1007/s11051-010-0169-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:3 AU: Chin, Hui Shun;Cheong, Kuan Yew;Razak, Khairunisak Abdul;
10:294:1 Vertical ZnO nanorod/Si contact light-emitting diode
DOI:10.1063/1.3562608 JN:APPLIED PHYSICS LETTERS PY:2011
TC:32 AU: Lee, Sang Wuk;Cho, Hak Dong;Panin, Gennady;Kang, Tae Won;
10:294:2 Controllable electrochemical synthesis of ZnO nanorod arrays on flexible ITO/PET substrate and their structural and optical properties
DOI:10.1016/j.apsusc.2012.06.109 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Ko, Yeong Hwan;Kim, Myung Sub;Yu, Jae Su;
10:294:3 Effect of AZO seed layer on electrochemical growth and optical properties of ZnO nanorod arrays on ITO glass
DOI:10.1088/0957-4484/22/44/445602 JN:NANOTECHNOLOGY PY:2011
TC:27 AU: Lee, Hee Kwan;Kim, Myung Sub;Yu, Jae Su;
10:294:4 Nucleation effect and growth mechanism of ZnO nanostructures by electrodeposition from aqueous zinc nitrate baths
DOI:10.1016/j.jcrysgro.2012.08.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:12 AU: Sun, Sujuan;Jiao, Shujie;Zhang, Kejun;Wang, Dongbo;Gao, Shiyong;Li, Hongtao;Wang, Jinzhong;Yu, Qingjiang;Guo, Fengyun;Zhao, Liancheng;
10:294:5 Controllable synthesis of periodic flower-like ZnO nanostructures on Si subwavelength grating structures
DOI:10.1088/0957-4484/22/20/205604 JN:NANOTECHNOLOGY PY:2011
TC:17 AU: Ko, Yeong Hwan;Leem, Jung Woo;Yu, Jae Su;
10:294:6 Defect-free ZnO nanorods for low temperature hydrogen sensor applications
DOI:10.1063/1.4902520 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ranwa, Sapana;Kulriya, Pawan K.;Sahu, Vikas Kumar;Kukreja, L. M.;Kumar, Mahesh;
10:294:7 Fabrication of nanostructured ZnO thin films using self-assembled organic molecule templates and optical transitions
DOI:10.1016/j.tsf.2014.04.083 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Inamdar, A. I.;Yuldashev, Shavkat U.;Jo, Yongcheol;Kim, Jongmin;Pawar, S. M.;Han, J.;Woo, Hyeonseok;Gurav, K. V.;Kim, J. H.;Jung, W.;Kim, Hyungsang;Im, Hyunsik;
10:294:8 Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering
DOI:10.1063/1.4883961 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:5 AU: Ranwa, Sapana;Kulriya, Pawan Kumar;Dixit, Vivek;Kumar, Mahesh;
10:294:9 Galvanic deposition of ZnO using mixed electrolyte and their photoluminescence properties
DOI:10.1016/j.tsf.2011.01.073 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Wang, Lida;Liu, Guichang;Zou, Longjiang;Xue, Dongfeng;
10:294:10 Effect of pH on the morphological evolution of NiO thin film synthesized on ZnO nanorod arrays by electrodeposition and post-annealing
DOI:10.1016/j.matlet.2013.03.077 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Kim, Ho Beom;Kim, Hyunghoon;Sohn, Ho Sang;Son, Injoon;Lee, Ho Seong;
10:295:1 ZnO-ZnS heterostructures with enhanced optical and photocatalytic properties
DOI:10.1007/s11051-010-0176-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:28 AU: Wu, Dapeng;Jiang, Yi;Yuan, Yafei;Wu, Junshu;Jiang, Kai;
10:295:2 Oxide content optimized ZnS-ZnO heterostructures via facile thermal treatment process for enhanced photocatalytic hydrogen production
DOI:10.1016/j.ijhydene.2014.04.137 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:5 AU: Hong, Eunpyo;Kim, Jung Hyeun;
10:295:3 L-Cysteine-Assisted Growth of Core-Satellite ZnS-Au Nanoassemblies with High Photocatalytic Efficiency
DOI:10.1021/la904389y JN:LANGMUIR PY:2010
TC:28 AU: Chen, Wei-Ta;Hsu, Yung-Jung;
10:295:4 One step from ZnO rod to ZnS porous tube
DOI:10.1016/j.mseb.2010.07.026 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:12 AU: Wu, Dapeng;Xiao, Bo;Liu, Ning;Xiao, Ying;Jiang, Kai;
10:295:5 Shape-controlled synthesis of self-assembly cubic CuO nanostructures by microwave
DOI:10.1016/j.matlet.2011.11.105 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Guo, Leilei;Tong, Fang;Liu, Haowen;Yang, Hanmin;Li, Jinlin;
10:295:6 Hydrothermal synthesis and optical property of ZnS/CdS composites
DOI:10.1557/jmr.2013.272 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Liu, Shuling;Wang, Zhengqi;Liu, Hui;Xu, QingQing;
10:295:7 One-pot fast synthesis of spherical ZnS/Au nanocomposites and their optical properties
DOI:10.1007/s10853-012-6767-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Geng, Jun;Song, Guanghui;
10:295:8 Highly porous ZnS microspheres for superior photoactivity after Au and Pt deposition and thermal treatment
DOI:10.1016/j.materresbull.2013.06.064 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Singla, Shilpa;Pal, Bonamali;
10:295:9 Synthesis of well-aligned ZnO nanorods on silicon substrate at lower temperature
DOI:10.1016/j.jallcom.2013.05.068 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Urgessa, Z. N.;Oluwafemi, O. S.;Olivier, E. J.;Neethling, J. H.;Botha, J. R.;
10:295:10 Growth of ZnS-coated ZnO nanorod arrays on (100) silicon substrate by two-step chemical synthesis
DOI:10.1016/j.jallcom.2014.05.131 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Kumarakuru, Haridas;Urgessa, Zelalem N.;Olivier, Ezra J.;Botha, Johannes R.;Venter, Andre;Neethling, Johannes H.;
10:295:11 Rapid microwave-assisted synthesis of ball-in-ball CuO microspheres and its application as a H2O2 sensor
DOI:10.1016/j.matlet.2012.10.058 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Wang, Fengxian;Kalam, Abul;Chang, Ling;Xie, Dong;Al-Shihri, Ayed S.;Du, Gaohui;
10:295:12 Effects of coating and thermal annealing on the photoluminescence properties of ZnS/ZnO one-dimensional radial heterostructures
DOI:10.1016/j.mseb.2010.02.029 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Jin, Changhyun;Kim, Hyunsoo;Baek, Kyungjoon;Lee, Chongmu;
10:295:13 Morphology-controlled synthesis of ZnS nanostructures via single-source approaches
DOI:10.1016/j.materresbull.2010.03.013 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:8 AU: Han, Qiaofeng;Qiang, Fei;Wang, Meijuan;Zhu, Junwu;Lu, Lude;Wang, Xin;
10:295:14 Monolithic film photocatalyst and its application for hydrogen production with repeated unit structures
DOI:10.1016/j.tsf.2012.12.048 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Hong, Eunpyo;Choi, Juseok;Kim, Jung Hyeun;
10:296:1 Defect-induced magnetism: Codoping and a prescription for enhanced magnetism
DOI:10.1103/PhysRevB.87.155309 JN:PHYSICAL REVIEW B PY:2013
TC:9 AU: Andriotis, Antonis N.;Menon, Madhu;
10:296:2 Hydrogen lithography for nanomagnetic domain on Co-doped ZnO using an anodic aluminum oxide template
DOI:10.1063/1.4864150 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Lee, Seunghun;Kim, Won-Kyung;Cho, Yong Chan;Kim, Bum-Su;Park, Ji Hun;Lee, Chang-Won;Lee, YoungPak;Lee, Sangbok;Fackler, Sean;Takeuchi, Ichiro;Cho, Chae Ryong;Jeong, Se-Young;
10:296:3 Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
DOI:10.1103/PhysRevB.85.174430 JN:PHYSICAL REVIEW B PY:2012
TC:20 AU: Li, Li;Guo, Y.;Cui, X. Y.;Zheng, Rongkun;Ohtani, K.;Kong, C.;Ceguerra, A. V.;Moody, M. P.;Ye, J. D.;Tan, H. H.;Jagadish, C.;Liu, Hui;Stampfl, C.;Ohno, H.;Ringer, S. P.;Matsukura, F.;
10:296:4 Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples
DOI:10.1063/1.3459885 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:22 AU: de Carvalho, H. B.;de Godoy, M. P. F.;Paes, R. W. D.;Mir, M.;Ortiz de Zevallos, A.;Iikawa, F.;Brasil, M. J. S. P.;Chitta, V. A.;Ferraz, W. B.;Boselli, M. A.;Sabioni, A. C. S.;
10:296:5 Direct observation of deuterium in ferromagnetic Zn0.9Co0.1O:D
DOI:10.1103/PhysRevB.81.212408 JN:PHYSICAL REVIEW B PY:2010
TC:17 AU: Kim, Su Jae;Lee, Seunghun;Cho, Yong Chan;Choi, Y. N.;Park, S.;Jeong, I. K.;Kuroiwa, Yoshihiro;Moriyoshi, Chikako;Jeong, Se-Young;
10:296:6 Study of the relation between oxygen vacancies and ferromagnetism in Fe-doped TiO2 nano-powders
DOI:10.1063/1.4883183 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Mudarra Navarro, Azucena M.;Rodriguez Torres, Claudia E.;Bilovol, Vitaliy;Fabiana Cabrera, A.;Errico, L. A.;Weissmann, M.;
10:296:7 Strong ferromagnetism in Pt-coated ZnCoO: The role of interstitial hydrogen
DOI:10.1063/1.4705304 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Shin, Jong Moon;Lee, Ho Sik;Cha, Su Young;Lee, Seunghun;Kim, Ji Young;Park, Noejung;Cho, Yong Chan;Kim, Su Jae;Kim, Sung-Kyu;Bae, Jong-Seong;Park, Sungkyun;Cho, Chae Ryong;Koinuma, Hideomi;Jeong, Se-Young;
10:296:8 Conductive and ferromagnetic contributions of H in ZnCoO using H-2 hot isostatic pressure
DOI:10.1063/1.3694040 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Cho, Yong Chan;Lee, Seunghun;Nahm, Ho Hyun;Kim, Su Jae;Park, Chul Hong;Lee, Su Yeon;Kim, Sung-Kyu;Cho, Chae Ryong;Koinuma, Hideomi;Jeong, Se-Young;
10:296:9 Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors
DOI:10.1103/PhysRevB.81.115209 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Santos, J. P. T.;Marques, M.;Teles, L. K.;Ferreira, L. G.;
10:296:10 Concentration dependence of magnetic moment in Ce1-xFexO2
DOI:10.1063/1.3688933 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Beausoleil, Geoffrey L., II;Thurber, Aaron;Rao, S. S.;Alanko, Gordon;Hanna, C. B.;Punnoose, Alex;
10:296:11 Hydrogen lithography for nanomagnetic domain on Co-doped ZnO using an anodic aluminum oxide template (vol 104, 052405, 2014)
DOI:10.1063/1.4903302 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Lee, Seunghun;Kim, Won-Kyung;Cho, Yong Chan;Kim, Bum-Su;Park, Ji Hun;Lee, Chang-Won;Lee, YoungPak;Lee, Sang Bok;Fackler, Sean;Takeuchi, Ichiro;Cho, Chae Ryong;Jeong, Se-Young;
10:296:12 A study of the correlation between hydrogen content and magnetism in ZnCoO
DOI:10.1063/1.3671786 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Lee, Seunghun;Kim, Bum-Su;Seo, Seung-Wan;Cho, Yong Chan;Kim, Sung Kyu;Kim, Jong Pil;Jeong, Il-Kyoung;Cho, Chae Ryong;Jung, Chang Uk;Koinuma, Hideomi;Jeong, Se-Young;
10:297:1 Photoluminescence and photoelectrochemical properties of nanocrystalline ZnO thin films synthesized by spray pyrolysis technique
DOI:10.1016/j.apsusc.2011.07.099 JN:APPLIED SURFACE SCIENCE PY:2011
TC:30 AU: Tarwal, N. L.;Shinde, V. V.;Kamble, A. S.;Jadhav, P. R.;Patil, D. S.;Patil, V. B.;Patil, P. S.;
10:297:2 Optical and structural properties of Sr-doped ZnO thin films
DOI:10.1016/j.matchemphys.2014.08.040 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Xu, Linhua;Xiao, Shaorong;Zhang, Chengyi;Zheng, Gaige;Su, Jing;Zhao, Lilong;Wang, Junfeng;
10:297:3 Photoluminescence and photoelectrochemical properties of the spray deposited copper doped zinc oxide thin films
DOI:10.1016/j.ceramint.2013.12.108 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Tarwal, N. L.;Gurav, K. V.;Mujawar, S. H.;Sadale, S. B.;Nam, K. W.;Bae, W. R.;Moholkar, A. V.;Kim, J. H.;Patil, P. S.;Jang, J. H.;
10:297:4 Ultrasonically sprayed ZnO:Co thin films: Growth and characterization
DOI:10.1016/j.apsusc.2013.02.065 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Demirselcuk, Barbaros;Bilgin, Vildan;
10:297:5 Alteration of magnetic and optical properties of ultrafine dilute magnetic semiconductor ZnO:Co2+ nanoparticles
DOI:10.1016/j.jcis.2010.01.050 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:22 AU: Sharma, Prashant K.;Dutta, Ranu K.;Pandey, Avinash C.;
10:297:6 A selective ethanol gas sensor based on spray-derived Ag-ZnO thin films
DOI:10.1007/s10853-013-7547-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:8 AU: Tarwal, N. L.;Rajgure, A. V.;Patil, J. Y.;Khandekar, M. S.;Suryavanshi, S. S.;Patil, P. S.;Gang, M. G.;Kim, J. H.;Jang, J. H.;
10:297:7 Nickel-induced microwheel-like surface morphological evolution of ZnO thin films by spray pyrolysis
DOI:10.1007/s00339-012-7071-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Tarwal, N. L.;Shinde, P. S.;Oh, Y. W.;Korosec, Romana Cerc;Patil, P. S.;
10:297:8 Synthesis of hydrophobic ZnO branches by a phase transfer-based solution method
DOI:10.1016/j.ceramint.2012.12.096 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Tang, Lanqin;Yang, Shaofeng;Wang, Zichen;Zhou, Bing;
10:297:9 Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis
DOI:10.1016/j.apsusc.2011.05.102 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Gokulakrishnan, V.;Parthiban, S.;Jeganathan, K.;Ramamurthi, K.;
10:297:10 Morphology controllable synthesis of ZnO crystals-pH-dependent growth
DOI:10.1016/j.matchemphys.2010.03.067 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:6 AU: Huang, Wen;Jia, Jianguang;Zhou, Xiaowen;Lin, Yuan;
10:298:1 Photoelectrocatalytic degradation of oxalic acid by spray deposited nanocrystalline zinc oxide thin films
DOI:10.1016/j.jallcom.2012.05.124 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:11 AU: Shinde, S. S.;Shinde, P. S.;Sapkal, R. T.;Oh, Y. W.;Haranath, D.;Bhosale, C. H.;Rajpure, K. Y.;
10:298:2 Green luminescent ZnO:Cu2+ nanoparticles for their applications in white-light generation from UV LEDs
DOI:10.1007/s11051-010-9916-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:36 AU: Sharma, Prashant K.;Kumar, Manvendra;Pandey, Avinash C.;
10:298:3 Sputtered zinc oxide thin films deposited on polyimide substrate and annealing effect on the physical characteristics
DOI:10.1016/j.tsf.2013.07.037 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Prepelita, P.;Craciun, V.;Filipescu, M.;Garoi, F.;
10:298:4 Synthesis and characterization of coupled semiconductor metal oxide (ZnO/CuO) nanocomposite
DOI:10.1016/j.matlet.2013.11.063 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Gajendiran, J.;Rajendran, V.;
10:298:5 Effect of Fe doping on the microstructure and electrical properties of transparent ZnO nanocrystalline films
DOI:10.1016/j.tsf.2012.03.058 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Lin, C. C.;Young, S. L.;Kung, C. Y.;Jhang, M. C.;Lin, C. H.;Kao, M. C.;Chen, H. Z.;Ou, C. R.;Cheng, C. C.;Lin, H. H.;
10:298:6 Microwave-assisted hydrothermal synthesis of zinc oxide particles starting from chloride precursor
DOI:10.1016/j.materresbull.2011.09.027 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Tseng, Chun-Chieh;Chou, Yu-Hsien;Liu, Chung-Ming;Liu, Yih-Ming;Ger, Ming-Der;Shu, Youn-Yuen;
10:298:7 Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se-2 solar cells
DOI:10.1016/j.tsf.2011.08.093 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Warasawa, Moe;Kaijo, Akira;Sugiyama, Mutsumi;
10:298:8 Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature
DOI:10.1016/j.tsf.2012.12.101 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Yan, Y.;Zhang, X. -F.;Ding, Y. -T.;
10:298:9 ZnO thin films preparation by spray pyrolysis and electrical characterization
DOI:10.1016/j.matlet.2011.11.004 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Goyal, Ankit;Kachhwaha, S.;
10:298:10 Investigation of chemical mechanical polishing of zinc oxide thin films
DOI:10.1016/j.apsusc.2011.01.116 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Gupta, Sushant;Kumar, Purushottam;Chakkaravathi, A. Arul;Craciun, Doina;Singh, Rajiv K.;
10:298:11 Physical properties of indium and fluorine codoped zinc oxide thin films deposited by chemical spray
DOI:10.1016/j.matchemphys.2011.03.071 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:8 AU: Maldonado, A.;Rodriguez-Baez, J.;Olvera, M. de la L.;
10:298:12 Theoretical Aspect of Nanonematic Composite: Energy Functional and Threshold Voltage
DOI:10.1080/15421406.2013.803917 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2013
TC:0 AU: Pandey, Kamal K. R.;Misra, Abhishek K. R.;Tripathi, Pankaj K. R.;Yadav, Satya P.;Manohar, Rajiv;
10:299:1 Microwave dielectric properties of Al-doped ZnO powders synthesized by coprecipitation method
DOI:10.1016/j.ceramint.2013.04.056 JN:CERAMICS INTERNATIONAL PY:2013
TC:11 AU: Wang, Yuan;Luo, Fa;Zhang, Ling;Zhu, Dongmei;Zhou, Wancheng;
10:299:2 Highly Transparent and Conductive ZnO: Al Thin Films from a Low Temperature Aqueous Solution Approach
DOI:10.1002/adma.201303186 JN:ADVANCED MATERIALS PY:2014
TC:19 AU: Hagendorfer, Harald;Lienau, Karla;Nishiwaki, Shiro;Fella, Carolin M.;Kranz, Lukas;Uhl, Alexander R.;Jaeger, Dominik;Luo, Li;Gretener, Christina;Buecheler, Stephan;Romanyuk, Yaroslav E.;Tiwari, Ayodhya N.;
10:299:3 Sol-Gel-Derived High-Performance Stacked Transparent Conductive Oxide Thin Films
DOI:10.1111/jace.13116 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:2 AU: Sugahara, Tohru;Hirose, Yukiko;Cong, Shuren;Koga, Hirotaka;Jiu, Jinting;Nogi, Masaya;Nagao, Shijo;Suganuma, Katsuaki;
10:299:4 Synthesis of pristine In2O3/ZnO-In2O3 composited nanotubes and investigate the enhancement of their acetone sensing properties
DOI:10.1016/j.mssp.2014.07.032 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Chi, Xiao;Liu, Changbai;Li, Yu;Li, Haiying;Liu, Li;Bo, Xiaoqing;Liu, Lili;Su, Chang;
10:299:5 A Novel Alcohol Detector Based on ZrO2-Doped SnO2 Electrospun Nanofibers
DOI:10.1111/j.1551-2916.2009.03480.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:13 AU: Wang, Zhaojie;Li, Zhenyu;Liu, Li;Xu, Xiuru;Zhang, Hongnan;Wang, Wei;Zheng, Wei;Wang, Ce;
10:299:6 Effect of heat treatment on microstructural and optical properties of CBD grown Al-doped ZnO thin films
DOI:10.1016/j.mseb.2010.10.017 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:24 AU: Chandramohan, R.;Vijayan, T. A.;Arumugam, S.;Ramalingam, H. B.;Dhanasekaran, V.;Sundaram, K.;Mahalingam, T.;
10:299:7 Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction of GaN light emitting diode applications
DOI:10.1063/1.4724326 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: An, Sung Jin;
10:299:8 Preparation, dielectric property and infrared emissivity of Fe-doped ZnO powder by coprecipitation method at various reaction time
DOI:10.1016/j.ceramint.2013.10.107 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Su, Xiaolei;Jia, Yan;Liu, Xiaoqin;Wang, Junbo;Xu, Jie;He, Xinhai;Fu, Chong;Liu, Songtao;
10:299:9 Morphologies and electrochemical properties of 0.6Li(2)MnO(3)center dot 0.4LiCoO(2) composite cathode powders prepared by spray pyrolysis
DOI:10.1016/j.matchemphys.2013.07.045 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Kim, Min Ho;Kang, Yun Chan;Jeong, Sang Mun;Choi, Yun Ju;Kim, Yang Soo;
10:299:10 Strip twisted electrospun nanofiber yarns: Structural effects on tensile properties
DOI:10.1557/jmr.2011.295 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:7 AU: Zhou, Yaqiong;Fang, Jian;Wang, Xungai;Lin, Tong;
10:299:11 Microstructural and photoluminescence properties of Co-doped ZnO films fabricated using a simple solution growth method
DOI:10.1016/j.mssp.2010.11.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:16 AU: Elilarassi, R.;Chandrasekaran, G.;
10:299:12 OXIDE ELECTRONICS Like wildfire
DOI:10.1038/nmat3016 JN:NATURE MATERIALS PY:2011
TC:3 AU: Hardy, An;Van Bael, Marlies K.;
10:299:13 Mechanical properties of electrospun PMMA micro-yarns: Effects of NaCl mediation and yarn twist
DOI:10.1016/j.polymer.2012.08.062 JN:POLYMER PY:2012
TC:7 AU: Sui, Xiaomeng;Wiesel, Erica;Wagner, H. Daniel;
10:300:1 Development of a wet chemical method for the synthesis of arrayed ZnO nanorods
DOI:10.1016/j.jallcom.2010.03.235 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:23 AU: Hu, Shao-Hwa;Chen, Yi-Chuan;Hwang, Chyi-Ching;Peng, Cheng-Hsiung;Gong, Dah-Chuan;
10:300:2 Facile synthesis and improved photoluminescence of periodic SiC nanorod arrays by SiO2 templates-assisted magnetron sputtering method
DOI:10.1016/j.jallcom.2012.05.082 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Li, Zhenyu;Ge, Dengteng;Yang, Lili;Liu, Xin;Ding, Yanbo;Pan, Lei;Zhao, Jiupeng;Li, Yao;
10:300:3 Properties of ZnO:Bi thin films prepared by spray pyrolysis technique
DOI:10.1016/j.jallcom.2013.07.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Kumar, N. Sadananda;Bangera, Kasturi V.;Anandan, C.;Shivakumar, G. K.;
10:300:4 Elaboration and characterization of Al doped ZnO nanorod thin films annealed in hydrogen
DOI:10.1016/j.jallcom.2010.12.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Zhong, Wen-Wu;Liu, Fa-Min;Cai, Lu-Gang;Peng-Ding;Zhou, Chuan-Cang;Zeng, Le-Gui;Liu, Xue-Quan;Li, Yi;
10:300:5 Synthesis of different ZnO nanostructures by modified PVD process and potential use for 1dye-sensitized solar cells
DOI:10.1016/j.matchemphys.2010.07.035 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:16 AU: Jimenez-Cadena, G.;Comini, E.;Ferroni, M.;Vomiero, A.;Sberveglieri, G.;
10:300:6 Influences of Co doping on the structural and optical properties of ZnO nanostructured
DOI:10.1007/s00339-010-5840-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:22 AU: Khan, M. A. Majeed;Khan, M. Wasi;Alhoshan, Mansour;AlSalhi, M. S.;Aldwayyan, A. S.;
10:300:7 Low-temperature deposited ZnO thin films on the flexible substrate by cathodic vacuum arc technology
DOI:10.1016/j.apsusc.2011.03.065 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Yang, Ru-Yuan;Weng, Min-Hang;Pan, Cheng-Tang;Hsiung, Chin-Min;Huang, Chun-Chih;
10:300:8 Preparation and characterization of Mg-doped ZnO nanorods
DOI:10.1016/j.jallcom.2009.11.168 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:15 AU: Fang, Te-Hua;Kang, Shao-Hui;
10:300:9 Room temperature ferromagnetism in Mn-doped zinc oxide nanorods prepared by hybrid wet chemical route
DOI:10.1016/j.jallcom.2011.04.034 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Sharma, M. K.;Gayen, R. N.;Pal, A. K.;Kanjilal, D.;Chatterjee, Ratnamala;
10:301:1 Concurrent synthetic control of dopant (nitrogen) and defect complexes to realize broadband (UV-650 nm) absorption in ZnO nanorods for superior photo-electrochemical performance
DOI:10.1039/c2jm32812g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:15 AU: Game, Onkar;Singh, Upendra;Gupta, Anubha A.;Suryawanshi, Anil;Banpurkar, Arun;Ogale, Satishchandra;
10:301:2 P-Type Nitrogen-Doped ZnO Nanoparticles Stable under Ambient Conditions
DOI:10.1021/ja208044k JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:30 AU: Chavillon, Benoit;Cario, Laurent;Renaud, Adele;Tessier, Franck;Chevire, Francois;Boujtita, Mohammed;Pellegrin, Yann;Blart, Errol;Smeigh, Amanda;Hammarstrom, Leif;Odobel, Fabrice;Jobic, Stephane;
10:301:3 P-Type Nitrogen-Doped ZnO Nanostructures with Controlled Shape and Doping Level by Facile Microwave Synthesis
DOI:10.1021/la404593w JN:LANGMUIR PY:2014
TC:14 AU: Herring, Natalie P.;Panchakarla, Leela S.;El-Shall, M. Samy;
10:301:4 Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition
DOI:10.1016/j.materresbull.2014.05.020 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:3 AU: Naouar, M.;Ka, I.;Gaidi, M.;Alawadhi, H.;Bessais, B.;El Khakani, M. A.;
10:301:5 Thermal stability of sol-gel p-type Al-N codoped ZnO films and electric properties of nanostructured ZnO homojunctions fabricated by spin-coating them on ZnO nanorods
DOI:10.1016/j.actamat.2012.02.045 JN:ACTA MATERIALIA PY:2012
TC:12 AU: Yang, T. -H.;Wu, J. -M.;
10:301:6 Influence of N-doping on photocatalytic activity of ZnO nanoparticles under visible light irradiation
DOI:10.1016/j.matlet.2014.07.073 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Rajbongshi, Biju Mani;Ramchiary, Anjalu;Samdarshi, S. K.;
10:301:7 Crystallinity-dependent substitutional nitrogen doping in ZnO and its improved visible light photocatalytic activity
DOI:10.1016/j.jcis.2013.02.046 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:13 AU: Yu, Zongbao;Yin, Li-Chang;Xie, Yingpeng;Liu, Gang;Ma, Xiuliang;Cheng, Hui-Ming;
10:301:8 Effect of the oxidation temperature on microstructure and conductivity of ZnxNy thin films and their conversion into p-type ZnO:N films
DOI:10.1016/j.apsusc.2013.01.076 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Erdogan, N. H.;Kara, K.;Ozdamar, H.;Esen, R.;Kavak, H.;
10:301:9 Tuning the Oxygen Release Temperature of Metal Peroxides over a Wide Range by Formation of Solid Solutions
DOI:10.1021/cm500622u JN:CHEMISTRY OF MATERIALS PY:2014
TC:0 AU: Lingampalli, S. R.;Dileep, K.;Datta, Ranjan;Gautam, Ujjal K.;
10:301:10 Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications
DOI:10.1016/j.tsf.2010.03.150 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Lee, Jong Hyun;Lee, Jun Seok;Lee, Sang Hyo;Nam, Hye Won;Hong, Jin Pyo;Cha, Seoung Nam;Park, Young Jun;Kim, Jong Min;
10:302:1 ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method
DOI:10.1063/1.3475473 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:39 AU: Bano, N.;Zaman, S.;Zainelabdin, A.;Hussain, S.;Hussain, I.;Nur, O.;Willander, M.;
10:302:2 Synthesis and optical properties of three-dimensional nanowall ZnO film prepared by atmospheric pressure chemical vapor deposition
DOI:10.1016/j.apsusc.2012.06.101 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Li, Zhenjun;Hu, Zuofu;Jiang, Li;Huang, Haiqin;Liu, Fengjuan;Zhang, Xiqing;Wang, Yongsheng;Yin, Penggang;Guo, Lin;
10:302:3 Effect of the polymer emission on the electroluminescence characteristics of n-ZnO nanorods/p-polymer hybrid light emitting diode
DOI:10.1007/s00339-011-6411-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:13 AU: Zaman, S.;Zainelabdin, A.;Amin, G.;Nur, O.;Willander, M.;
10:302:4 Enhanced surface photovoltage response of ZnO nanorod based inorganic/organic hybrid junctions by constructing embedded bulk composite structures
DOI:10.1007/s00339-012-7314-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Kang, Dawei;Liu, Aimin;Bian, Jiming;Hu, Zengquan;Liu, Yiting;Qiao, Fen;
10:302:5 Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties
DOI:10.1063/1.3577607 JN:APPLIED PHYSICS LETTERS PY:2011
TC:13 AU: Kim, Jae-Min;Nam, Taewook;Lim, S. J.;Seol, Y. G.;Lee, N. -E.;Kim, Doyoung;Kim, Hyungjun;
10:302:6 Influence of the polymer concentration on the electroluminescence of ZnO nanorod/polymer hybrid light emitting diodes
DOI:10.1063/1.4754542 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Zaman, Saima;Zainelabdin, Ahmed;Amin, Gul;Nur, Omer;Willander, Magnus;
10:302:7 The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction
DOI:10.1007/s00339-009-5386-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:7 AU: Chen, Tao;Liu, Shu-Yi;Xie, Qi;Detavernier, Christophe;Van Meirhaeghe, R. L.;Qu, Xin-Ping;
10:302:8 Development of tilted hexagonal platelet ZnO using atmospheric pressure chemical vapor deposition and investigation of its growth mechanism
DOI:10.1063/1.3681163 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Yoo, Y. Z.;Kim, S. H.;Yoon, G. S.;Choi, E. H.;Park, J. -W.;Park, J. H.;Kim, B. -G.;Jung, S. C.;Park, B. M.;
10:302:9 Effect of Si substrate on ethanol gas sensing properties of ZnO films
DOI:10.1016/j.tsf.2011.04.009 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Zhou, Xiaoyan;Xue, Qingzhong;Ma, Ming;Li, Jianpeng;
10:302:10 A Flexible Blue Light-Emitting Diode Based on ZnO Nanowire/Polyaniline Heterojunctions
DOI:10.1155/2013/870254 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Liu, Y. Y.;Wang, X. Y.;Cao, Y.;Chen, X. D.;Xie, S. F.;Zheng, X. J.;Zeng, H. D.;
10:302:11 White light electroluminescence from poly(9-vinylcarbazole) (PVK)/ZnO NRs/poly(2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene) (MEH-PPV) dual heterojunctions
DOI:10.1007/s00339-014-8354-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Wang, You-Wei;Xu, Jian-Ping;Wang, Hao;Li, Shu-Bin;Shi, Qing-Liang;Hong, Yuan;Jiang, Li-Fang;Yuan, Hu-Chen;Li, Lan;
10:302:12 On the interface properties of ZnO/Si electroluminescent diodes
DOI:10.1063/1.3305530 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Pau, J. L.;Piqueras, J.;Rogers, D. J.;Teherani, F. Hosseini;Minder, K.;McClintock, R.;Razeghi, M.;
10:302:13 Study of (100) orientated ZnO films by APCVD system
DOI:10.1016/j.mseb.2010.04.030 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:3 AU: Pacio, M.;Juarez, H.;Escalante, G.;Garcia, G.;Diaz, T.;Rosendo, E.;
10:302:14 Enhanced photoluminescence of polyfluorene by incorporation of Al-doped ZnO nanoparticles
DOI:10.1016/j.tsf.2012.12.087 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Cuong Ton-That;Thien-Phap Nguyen;Dan, Yi;
10:303:1 Doping concentration driven morphological evolution of Fe doped ZnO nanostructures
DOI:10.1063/1.4900721 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Sahai, A.;Kumar, Y.;Agarwal, V.;Olive-Mendez, S. F.;Goswami, N.;
10:303:2 Investigation on Fe-doped ZnO nanostructures prepared by a chemical route
DOI:10.1016/j.mseb.2010.03.045 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:33 AU: Mishra, A. K.;Das, D.;
10:303:3 Solvent thermal synthesis and gas-sensing properties of Fe-doped ZnO
DOI:10.1007/s10853-009-3920-y JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:22 AU: Zhang, Wen-Hui;Zhang, Wei-De;Zhou, Jue-Fei;
10:303:4 Fe dopants enhancing ethanol sensitivity of ZnO thin film deposited by RF magnetron sputtering
DOI:10.1007/s10853-014-8349-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:1 AU: Hassan, M. Mehedi;Khan, Wasi;Naqvi, A. H.;Mishra, Prabhash;Islam, S. S.;
10:303:5 Structural and frequency dependent dielectric properties of Fe3+ doped ZnO nanoparticles
DOI:10.1016/j.materresbull.2012.08.015 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:18 AU: Hassan, M. Mehedi;Ahmed, Arham S.;Chaman, M.;Khan, Wasi;Naqvi, A. H.;Azam, Ameer;
10:303:6 Structure and gas sensing properties of nanocrystalline Fe-doped ZnO films prepared by spin coating method
DOI:10.1007/s10853-013-7245-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:9 AU: Rambu, A. P.;Doroftei, C.;Ursu, L.;Iacomi, F.;
10:303:7 Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films
DOI:10.1016/j.jallcom.2014.04.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Mhamdi, A.;Mimouni, R.;Amlouk, A.;Amlouk, M.;Belgacem, S.;
10:303:8 Probing the dominance of interstitial oxygen defects in ZnO nanoparticles through structural and optical characterizations
DOI:10.1016/j.ceramint.2014.06.041 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Sahai, Anshuman;Goswami, Navendu;
10:303:9 Structural transformation in nickel doped zinc oxide nanostructures
DOI:10.1016/j.materresbull.2012.10.045 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:7 AU: Goswami, Navendu;Sahai, Anshuman;
10:303:10 Mechanical doping of ZnO powders
DOI:10.1016/j.jallcom.2011.12.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Damonte, L. C.;Meyer, M.;Mendoza-Zelis, L. A.;
10:304:1 Role of Self-Assembled Monolayer Passivation in Electrical Transport Properties and Flicker Noise of Nanowire Transistors
DOI:10.1021/nn302484c JN:ACS NANO PY:2012
TC:15 AU: Kim, Seongmin;Carpenter, Patrick D.;Jean, Rand K.;Chen, Haitian;Zhou, Chongwu;Ju, Sanghyun;Janes, David B.;
10:304:2 Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors
DOI:10.1021/nn305289w JN:ACS NANO PY:2013
TC:6 AU: Zou, Xuming;Liu, Xingqiang;Wang, Chunlan;Jiang, Ying;Wang, Yong;Xiao, Xiangheng;Ho, Johnny C.;Li, Jinchai;Jiang, Changzhong;Xiong, Qihua;Liao, Lei;
10:304:3 Oxygen plasma exposure effects on indium oxide nanowire transistors
DOI:10.1088/0957-4484/21/14/145207 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Kim, Seongmin;Delker, Collin;Chen, Pochiang;Zhou, Chongwu;Ju, Sanghyun;Janes, David B.;
10:304:4 Interface studies of N-2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements
DOI:10.1088/0957-4484/24/30/305201 JN:NANOTECHNOLOGY PY:2013
TC:4 AU: Kim, Seongmin;Kim, Hwansoo;Janes, David B.;Ju, Sanghyun;
10:304:5 Effect of nitrogen plasma on the surface of indium oxide nanowires
DOI:10.1088/0957-4484/23/43/435201 JN:NANOTECHNOLOGY PY:2012
TC:4 AU: Seo, Keumyoung;Kim, Seongmin;Janes, David B.;Jung, Min Wook;An, Ki-Seok;Ju, Sanghyun;
10:304:6 Control of Current Saturation and Threshold Voltage Shift in Indium Oxide Nanowire Transistors with Femtosecond Laser Annealing
DOI:10.1021/nn102723w JN:ACS NANO PY:2011
TC:9 AU: Lee, Chunghun;Srisungsitthisunti, Pornsak;Park, Sangphill;Kim, Seongmin;Xu, Xianfan;Roy, Kaushik;Janes, David B.;Zhou, Chongwu;Ju, Sanghyun;Qi, Minghao;
10:304:7 Nanowire-based ternary transistor by threshold-voltage manipulation
DOI:10.1063/1.4871413 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Han, Junebeom;Lim, Taekyung;Bong, Jihye;Seo, Keumyoung;Kim, Sunkook;Ju, Sanghyun;
10:304:8 Tunable-white-light-emitting nanowire sources
DOI:10.1088/0957-4484/21/25/255201 JN:NANOTECHNOLOGY PY:2010
TC:11 AU: Seo, Keumyoung;Lim, Taekyung;Kim, Sangdan;Park, Hong-Lee;Ju, Sanghyun;
10:304:9 A nanowire-based shift register for display scan drivers
DOI:10.1088/0957-4484/22/40/405203 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Lim, Taekyung;Ahn, Seong-Jin;Suh, Misook;Kwon, Oh-Kyong;Meyyappan, Meyya;Ju, Sanghyun;
10:304:10 Fabrication of reliable semiconductor nanowires by controlling crystalline structure
DOI:10.1088/0957-4484/22/30/305704 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Kim, Sangdan;Lim, Taekyung;Ju, Sanghyun;
10:304:11 Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications
DOI:10.1063/1.4789405 JN:AIP ADVANCES PY:2013
TC:2 AU: Lee, Sumi;Kim, Seongmin;Janes, David B.;Meyyappan, M.;Ju, Sanghyun;
10:304:12 Laser Annealing of Nanocrystalline Gold Nanowires
DOI:10.1021/am401716u JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:1 AU: Kim, Jungyun;Lin, Chia-Yu;Xing, Wendong;Mecartney, Martha L.;Potma, Eric O.;Penner, Reginald M.;
10:305:1 Investigation of photoluminescence mechanisms of ZnO through experimental and first-principles calculation methods
DOI:10.1016/j.actamat.2010.09.016 JN:ACTA MATERIALIA PY:2011
TC:17 AU: Kim, Y.;Kang, S.;
10:305:2 Effect of particle size on photoluminescence emission intensity in ZnO
DOI:10.1016/j.actamat.2011.01.042 JN:ACTA MATERIALIA PY:2011
TC:16 AU: Kim, Yongseon;Kong, Shinhoo;
10:305:3 Experimental and First-Principles Thermodynamic Study of the Formation and Effects of Vacancies in Layered Lithium Nickel Cobalt Oxides
DOI:10.1021/cm202415x JN:CHEMISTRY OF MATERIALS PY:2011
TC:19 AU: Kim, Yongseon;Kim, Doyu;Kang, Shinhoo;
10:305:4 Lithium Nickel Cobalt Manganese Oxide Synthesized Using Alkali Chloride Flux: Morphology and Performance As a Cathode Material for Lithium Ion Batteries
DOI:10.1021/am300386j JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:25 AU: Kim, Yongseon;
10:305:5 First-principles and experimental investigation of the morphology of layer-structured LiNiO2 and LiCoO2
DOI:10.1039/c2jm31145c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:11 AU: Kim, Yongseon;Lee, Hyundeok;Kang, Shinhoo;
10:305:6 Mechanism of gas evolution from the cathode of lithium-ion batteries at the initial stage of high-temperature storage
DOI:10.1007/s10853-013-7673-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Kim, Yongseon;
10:305:7 Factors Affecting the Volumetric Energy Density of Lithium-Ion Battery Materials: Particle Density Measurements and Cross-Sectional Observations of Layered LiCo1-xNixO2 with 0 <= x <= 1
DOI:10.1021/am502242z JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Mukai, Kazuhiko;Nakano, Hideyuki;
10:305:8 First principles investigation of the structure and stability of LiNiO2 doped with Co and Mn
DOI:10.1007/s10853-012-6299-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:3 AU: Kim, Yongseon;
10:305:9 Synthesis of High-Density Nickel Cobalt Aluminum Hydroxide by Continuous Coprecipitation Method
DOI:10.1021/am201585z JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:8 AU: Kim, Yongseon;Kim, Doyu;
10:305:10 First-principles investigation of the gas evolution from the cathodes of lithium-ion batteries during the storage test
DOI:10.1007/s10853-014-8554-z JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Kim, Yongseon;Jeong, Dae-Yong;Han, Seung Chul;
10:306:1 Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies
DOI:10.1021/nl1006307 JN:NANO LETTERS PY:2010
TC:84 AU: Feigenbaum, Eyal;Diest, Kenneth;Atwater, Harry A.;
10:306:2 Transparent conductive oxides: Plasmonic materials for telecom wavelengths
DOI:10.1063/1.3604792 JN:APPLIED PHYSICS LETTERS PY:2011
TC:46 AU: Noginov, M. A.;Gu, Lei;Livenere, J.;Zhu, G.;Pradhan, A. K.;Mundle, R.;Bahoura, M.;Barnakov, Yu A.;Podolskiy, V. A.;
10:306:3 Ultrafast plasmonics using transparent conductive oxide hybrids in the epsilon-near-zero regime
DOI:10.1063/1.4798833 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Traviss, Daniel;Bruck, Roman;Mills, Ben;Abb, Martina;Muskens, Otto L.;
10:306:4 Energy harvesting in semiconductor-insulator-semiconductor junctions through excitation of surface plasmon polaritons
DOI:10.1063/1.3684833 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: Pradhan, A. K.;Holloway, Terence;Mundle, Rajeh;Dondapati, Hareesh;Bahoura, M.;
10:306:5 Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties
DOI:10.1063/1.4900936 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Liu, Xiaoge;Park, Junghyun;Kang, Ju-Hyung;Yuan, Hongtao;Cui, Yi;Hwang, Harold Y.;Brongersma, Mark L.;
10:306:6 Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering
DOI:10.1063/1.4824751 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Dondapati, Hareesh;Santiago, Kevin;Pradhan, A. K.;
10:306:7 Modulation of surface plasmon wave by photo-induced refractive index changes of CdSe quantum dots
DOI:10.1063/1.3673560 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Chen, Horng-Shyang;Wang, Jyh-Yang;Yeh, Sheng-Shiuan;Chen, Chii-Dong;Lin, Hung-Yi;
10:307:1 Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu
DOI:10.1063/1.3496038 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Pan, H. L.;Yao, B.;Yang, T.;Xu, Y.;Zhang, B. Y.;Liu, W. W.;Shen, D. Z.;
10:307:2 Chemical states of gold doped in ZnO films and its effect on electrical and optical properties
DOI:10.1016/j.jallcom.2013.09.199 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Xu, Y.;Yao, B.;Li, Y. F.;Ding, Z. H.;Li, J. C.;Wang, H. Z.;Zhang, Z. Z.;Zhang, L. G.;Zhao, H. F.;Shen, D. Z.;
10:307:3 Effects of S on solid solubility of Ag and electrical properties of Ag-doped ZnO films grown by radio frequency magnetron sputtering
DOI:10.1016/j.jallcom.2012.10.103 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Li, J. C.;Li, Y. F.;Yang, T.;Yao, B.;Ding, Z. H.;Xu, Y.;Zhang, Z. Z.;Zhang, L. G.;Zhao, H. F.;Shen, D. Z.;
10:307:4 Robust low resistivity p-type ZnO:Na films after ultraviolet illumination: The elimination of grain boundaries
DOI:10.1063/1.4754003 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Lin, S. S.;
10:307:5 Vertical p-Type Cu-Doped ZnO/n-Type ZnO Homojunction Nanowire-Based Ultraviolet Photodetector by the Furnace System with Hotwire Assistance
DOI:10.1021/am406030d JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:6 AU: Hsu, Cheng-Liang;Gao, Yi-Dian;Chen, You-Syuan;Hsueh, Ting-Jen;
10:307:6 Influence of Ag-S codoping on silver chemical states and stable p-type conduction behavior of the ZnO films
DOI:10.1016/j.ceramint.2013.07.133 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Xu, Y.;Yang, T.;Yao, B.;Li, Y. F.;Ding, Z. H.;Li, J. C.;Wang, H. Z.;Zhang, Z. Z.;Zhang, L. G.;Zhao, H. F.;Shen, D. Z.;
10:307:7 Effect of (O, As) dual implantation on p-type doping of ZnO films
DOI:10.1063/1.3662908 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Kim, Chang Oh;Shin, Dong Hee;Kim, Sung;Choi, Suk-Ho;Belay, K.;Elliman, R. G.;
10:307:8 Luminescence properties of defects in nanocrystalline ZnO
DOI:10.1063/1.4794001 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Smith, Jeremy;Akbari-Sharbaf, Arash;Ward, Matthew J.;Murphy, Michael W.;Fanchini, Giovanni;Sham, Tsun Kong;
10:307:9 Structural and optical properties of Au-implanted ZnO films
DOI:10.1016/j.apsusc.2011.08.022 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Zhang, X. D.;Wu, P.;Shen, Y. Y.;Zhang, L. H.;Xue, Y. H.;Zhu, F.;Zhang, D. C.;Liu, C. L.;
10:307:10 ZnO:Ag film growth on Si substrate with ZnO buffer layer by rf sputtering
DOI:10.1016/j.apsusc.2010.11.047 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Duan, Li;Yu, Xiaochen;Ni, Lei;Wang, Zhuo;
10:307:11 Realization of Ag-S codoped p-type ZnO thin films
DOI:10.1016/j.apsusc.2014.07.156 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Xu, Tian Ning;Li, Xiang;Lu, Zhong;Chen, Yong Yue;Sui, Cheng Hua;Wu, Hui Zhen;
10:307:12 Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO
DOI:10.1063/1.3357999 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Ankiewicz, A. O.;Martins, J. S.;Carmo, M. C.;Grundmann, M.;Zhou, Shengqiang;Schmidt, H.;Sobolev, N. A.;
10:308:1 Structural and optical characterizations of pyronine B thin films and its photovoltaic applications
DOI:10.1016/j.jallcom.2011.03.096 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Farag, A. A. M.;Osiris, W. G.;El-Shazly, E. A. A.;
10:308:2 Combustion synthesis of Co-doped zinc oxide nanoparticles using mixture of citric acid-glycine fuels
DOI:10.1016/j.jallcom.2010.10.087 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:17 AU: Rasouli, Sousan;Moeen, Shirin Jebeli;
10:308:3 Electrical characterization of the polyaniline/p-silicon and polyaniline titanium dioxide tetradecyltrimethylammonium bromide/p-silicon heterojunctions
DOI:10.1016/j.tsf.2009.07.140 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Boyarbay, B.;Cetin, H.;Uygun, A.;Ayyildiz, E.;
10:308:4 Annealing temperatures induced optical constant variations of methyl violet 2B thin films manufactured by the spin coating technique
DOI:10.1016/j.jnoncrysol.2011.10.027 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:12 AU: Zeyada, H. M.;El-Nahass, M. M.;Elashmawi, I. S.;Habashi, A. A.;
10:308:5 Influence of annealing on the optical properties of 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride thin films
DOI:10.1016/j.matchemphys.2010.09.017 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:12 AU: El-Nahass, M. M.;El-Deeb, A. F.;Metwally, H. S.;Hassanien, A. M.;
10:308:6 Structural, absorption and dispersion characteristics of nanocrystalline copper tetraphenyl porphyrin thin films
DOI:10.1016/j.synthmet.2014.05.013 JN:SYNTHETIC METALS PY:2014
TC:3 AU: El-Nahass, M. M.;Farag, A. A. M.;El-Metwally, Mossad;Abu-Samaha, F. S. H.;Elesh, Eman;
10:308:7 Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques
DOI:10.1063/1.4733569 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Felix, J. F.;Aziz, M.;da Cunha, D. L.;Seidel, K. F.;Huemmelgen, I. A.;de Azevedo, W. M.;da Silva, E. F., Jr.;Taylor, D.;Henini, M.;
10:308:8 Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction
DOI:10.1016/j.synthmet.2011.08.030 JN:SYNTHETIC METALS PY:2011
TC:13 AU: El-Nahass, M. M.;Metwally, H. S.;El-Sayed, H. E. A.;Hassanien, A. M.;
10:308:9 The charge transfer characteristic of porphyrin Langmuir-Blodgett films
DOI:10.1016/j.apsusc.2013.04.098 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Qi, P.;Li, Z. H.;Zhou, Y.;Wang, F.;Du, Y.;Zhang, L. Q.;Li, G.;Zhang, H. Z.;
10:308:10 Effect of gamma-ray irradiation on structure formation and optical constants of thermally evaporated rhodamine B thin films
DOI:10.1016/j.jnoncrysol.2012.01.008 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:7 AU: Zeyada, H. M.;EL-Nahass, M. M.;Samak, S. A.;
10:308:11 Photovoltaic and spectroscopic studies of selected halogenated porphyrins for their application in organic solar cells
DOI:10.1016/j.solmat.2009.11.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:15 AU: Wrobel, Danuta;Siejak, Aleksandra;Siejak, Przemyslaw;
10:308:12 The charge transfer characteristic of tetraphenylporphyrin iron chloride Langmuir-Blodgett films
DOI:10.1016/j.apsusc.2013.07.142 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Du, Y.;Li, Z. H.;Qi, P.;Wang, F.;Liu, D.;
10:308:13 Structural and optical properties of Tris(8-hydroxyquinoline) aluminum (III) (Alq(3)) thermal evaporated thin films
DOI:10.1016/j.jallcom.2010.07.110 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:15 AU: El-Nahass, M. M.;Farid, A. M.;Atta, A. A.;
10:308:14 Influence of X-ray irradiation on the optical properties of ruthenium(II)octa-(n-hexyl)-phthalocyanine thin film
DOI:10.1016/j.jallcom.2010.04.029 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: El-Nahass, M. M.;Youssef, Tamer E.;
10:308:15 Gamma-ray irradiation induced structural and optical constants changes of thermally evaporated neutral red thin films
DOI:10.1007/s10853-011-5825-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:3 AU: Zeyada, H. M.;El-Nahass, M. M.;El-Shabaan, M. M.;
10:309:1:1 Magnetism of Co doped ZnO with Al codoping: Carrier-induced mechanisms versus extrinsic origins
DOI:10.1103/PhysRevB.82.041202 JN:PHYSICAL REVIEW B PY:2010
TC:22 AU: Ney, A.;Ney, V.;Ye, S.;Ollefs, K.;Kammermeier, T.;Kaspar, T. C.;Chambers, S. A.;Wilhelm, F.;Rogalev, A.;
10:309:1:2 Valence State-Dependent Ferromagnetism in Mn-Doped NiO Thin Films
DOI:10.1002/adma.201103436 JN:ADVANCED MATERIALS PY:2012
TC:14 AU: Yan, Wensheng;Sun, Zhihu;Li, Zhongrui;Liu, Qinghua;Yao, Tao;Pan, Zhiyun;Wang, Chao;Hu, Fengchun;Jiang, Yong;Qi, Zeming;Zeng, Fei;Wei, Shiqiang;
10:309:1:3 High-frequency magneto-electrical properties of Zn1-x-yAlxCoyO thin films
DOI:10.1016/j.tsf.2011.03.100 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Kuo, Ming-Feng;Fu, Chao-Ming;Hsu, Chao-Yi;Lee, Jung-Chuan;Lee, Yu-Hua;Chang, Chia-Ou;Chou, Chan-Shin;
10:309:1:4 Valence State-Dependent Ferromagnetism in Mn-Doped NiO Thin Films (vol 24, pg 353, 2012)
DOI:10.1002/adma.201290008 JN:ADVANCED MATERIALS PY:2012
TC:0 AU: Yan, Wensheng;Sun, Zhihu;Li, Zhongrui;Liu, Qinghua;Yao, Tao;Pan, Zhiyun;Wang, Chao;Hu, Fengchun;Jiang, Yong;Qi, Zeming;Zeng, Fei;Wei, Shiqiang;
10:309:2:1 Three-dimensional spin orientation in antiferromagnetic domain walls of NiO studied by x-ray magnetic linear dichroism photoemission electron microscopy
DOI:10.1103/PhysRevB.85.104418 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Arai, Kuniaki;Okuda, Taichi;Tanaka, Arata;Kotsugi, Masato;Fukumoto, Keiki;Ohkochi, Takuo;Nakamura, Tetsuya;Matsushita, Tomohiro;Muro, Takayuki;Oura, Masaki;Senba, Yasunori;Ohashi, Haruhiko;Kakizaki, Akito;Mitsumata, Chiharu;Kinoshita, Toyohiko;
10:309:2:2 Direct observation of spin configuration in an exchange coupled Fe/NiO(100) system by x-ray magnetic circular- and linear- dichroism photoemission electron microscope
DOI:10.1063/1.3647776 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Arai, Kuniaki;Okuda, Taichi;Tanaka, Arata;Fukumoto, Keiki;Hasegawa, Takahide;Nakamura, Tetsuya;Matsushita, Tomohiro;Muro, Takayuki;Kakizaki, Akito;Kinoshita, Toyohiko;
10:309:2:3 Anisotropic x-ray magnetic linear dichroism and spectromicroscopy of interfacial Co/NiO(001)
DOI:10.1103/PhysRevB.83.064409 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: van der Laan, G.;Telling, N. D.;Potenza, A.;Dhesi, S. S.;Arenholz, E.;
10:309:2:4 Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory
DOI:10.1063/1.3427555 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Ohshima, Norikazu;Numata, Hideaki;Fukami, Shunsuke;Nagahara, Kiyokazu;Suzuki, Tetsuhiro;Ishiwata, Nobuyuki;Fukumoto, Keiki;Kinoshita, Toyohiko;Ono, Teruo;
10:309:2:5 Direct observation of twin domains of NiO(100) by x-ray linear dichroism at the O K edge using photoemission electron microscopy
DOI:10.1103/PhysRevB.85.174401 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Arai, Kuniaki;Okuda, Taichi;Tanaka, Arata;Kotsugi, Masato;Fukumoto, Keiki;Ohkochi, Takuo;Guo, Fangzhun;Nakamura, Tetsuya;Matsushita, Tomohiro;Muro, Takayuki;Oura, Masaki;Senba, Yasunori;Ohashi, Haruhiko;Kakizaki, Akito;Kinoshita, Toyohiko;
10:309:3:1 Electric and magnetic behaviors observed in NiO-based thin films under light-irradiation
DOI:10.1063/1.4895047 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Luo, Yi-Dong;Song, Kenan;Shun, Li;Gao, Junqi;Xu, Ben;Lin, Yuan-Hua;Nan, Ce-Wen;Liu, Wei;
10:309:3:2 Ferromagnetism in antiferromagnetic NiO-based thin films
DOI:10.1063/1.3626053 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Lin, Yuan-Hua;Zhan, Bin;Nan, Ce-Wen;Zhao, Rongjuan;Xu, Xiang;Kobayashi, M.;
10:309:3:3 Tunable ferromagnetism in Ni0.97-yMnyO thin films with hole doping and their electronic structures
DOI:10.1103/PhysRevB.83.193105 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Lin, Yuan-Hua;Kobayashi, M.;Zhao, Rongjuan;Song, G. S.;Nan, Ce-Wen;Li, Shun;Yan, Wen-Sheng;Hwang, J. I.;Ooki, Y.;Fujimori, A.;Takeda, Y.;Fujimori, S. I.;Terai, K.;Okane, T.;Saitoh, Y.;Yamagami, H.;Gao, Chen;
10:309:3:4 Effect of electron and hole doping on magnetic properties of zinc-blende SrC and BaC from first principles
DOI:10.1016/j.jmmm.2012.02.029 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Dong, Shengjie;Zhao, Hui;
10:309:3:5 Ferromagnetism in antiferromagnetic NiO-based thin films (vol 110, 043921, 2011)
DOI:10.1063/1.3656440 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:0 AU: Lin, Yuan-Hua;Zhan, Bin;Nan, Ce-Wen;Zhao, Rongjuan;Xu, Xiang;Kobayashi, M.;
10:309:4:1 Thickness dependence of room temperature ferromagnetism observed in Fe-doped NiO thin films
DOI:10.1063/1.4865555 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Zhang, Yu-Jun;Luo, Yi-Dong;Lin, Yuan-Hua;Nan, Ce-Wen;
10:309:4:2 Tunable Ferromagnetic Behaviors Observed in Highly Orientated Co-Doped ZnO Thin Films by the Bandgap Engineering
DOI:10.1111/jace.12145 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:6 AU: Zhang, Yujun;Guo, Ting;Luo, Yi-Dong;Lin, Yuan-Hua;Nan, Ce-Wen;
10:309:4:3 Effects of calcining temperature on structural and magnetic properties of nanosized Fe-doped NiO prepared by diol-based sol-gel process
DOI:10.1016/j.jmmm.2011.05.014 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:2 AU: Khemprasit, Jinda;Kaen-ngam, Suriyasit;Khumpaitool, Bualan;Kamkhou, Phalakorn;
10:309:5:1 Surface antiferromagnetic domain imaging using low-energy unpolarized electrons
DOI:10.1103/PhysRevB.84.132402 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Menon, Krishnakumar S. R.;Mandal, Suman;Das, Jayanta;Mentes, Tevfik Onur;Angel Nino, Miguel;Locatelli, Andrea;Belkhou, Rachid;
10:309:5:2 Magnetic skin layer of NiO(100) probed by polarization-dependent spectromicroscopy
DOI:10.1063/1.4884517 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Mandal, Suman;Belkhou, Rachid;Maccherozzi, Francesco;Menon, Krishnakumar S. R.;
10:309:5:3 Antiferromagnetism in NiO Observed by Transmission Electron Diffraction
DOI:10.1103/PhysRevLett.109.267204 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:0 AU: Loudon, J. C.;
10:310:1 Microwave assisted synthesis of ZnO nanoparticles in ionic liquid [Bmim]cl and their photocatalytic investigation
DOI:10.1016/j.mssp.2014.05.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Rabieh, Sasan;Bagheri, Mozhgan;Heydari, Mojgan;Badiei, Elahe;
10:310:2 The fabrication of rod-like and hierarchical ZnO nanomaterials by a simple and controllable method
DOI:10.1016/j.mssp.2013.08.017 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Peng, Chongnan;Zhang, Guoping;Gong, Xiaozhong;Sun, Rong;
10:310:3 Preparation of metal oxide nanoparticles in ionic liquid medium
DOI:10.1007/s11051-012-0939-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:5 AU: Rodriguez-Cabo, Borja;Rodil, Eva;Soto, Ana;Arce, Alberto;
10:310:4 Ultrasonic Approach for Formation of Erbium Oxide Nanoparticles with Variable Geometries
DOI:10.1021/la203622u JN:LANGMUIR PY:2011
TC:8 AU: Radziuk, Darya;Skirtach, Andre;Gessner, Andre;Kumke, Michael U.;Zhang, Wei;Moehwald, Helmuth;Shchukin, Dmitry;
10:310:5 Enhanced photocatalytic activity of zinc oxide synthesized by calcination of zinc sulfide precursor
DOI:10.1016/j.mssp.2012.06.006 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Zhao, Xiaohua;Li, Meng;Lou, Xiangdong;
10:310:6 Ultrasonic Alloying of Preformed Gold and Silver Nanoparticles
DOI:10.1002/smll.200901623 JN:SMALL PY:2010
TC:24 AU: Radziuk, Darya V.;Zhang, Wei;Shchukin, Dmitry;Moehwald, Helmuth;
10:310:7 Coalescence of Ag2S and Au nanocrystals at room temperature
DOI:10.1039/c1jm12358k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Qu, Jianglan;Liu, Hui;Wei, Yifeng;Wu, Xiaofeng;Yue, Renliang;Chen, Yunfa;Yang, Jun;
10:310:8 Photocatalytic degradation of methyl orange and gas-sensing performance of nanosized ZnO
DOI:10.1016/j.mssp.2012.12.027 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Li, Guizhi;Liu, Yanli;
10:310:9 Facile combustion synthesis of ZnO nanoparticles using Cajanus cajan (L.) and its multidisciplinary applications
DOI:10.1016/j.materresbull.2014.06.010 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:3 AU: Manjunath, K.;Ravishankar, T. N.;Kumar, Dhanith;Priyanka, K. P.;Varghese, Thomas;Naika, H. Raja;Nagabhushana, H.;Sharma, S. C.;Dupont, J.;Ramakrishnappa, T.;Nagaraju, G.;
10:310:10 Surfactant free hydrothermally derived ZnO nanowires, nanorods, microrods and their characterization
DOI:10.1016/j.mssp.2010.02.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:14 AU: Nagaraju, G.;Ashoka, S.;Chithaiah, P.;Tharamani, C. N.;Chandrappa, G. T.;
10:310:11 Ultrasonic synthesis and photocatalytic performance of metal-ions doped TiO2 catalysts under solar light irradiation
DOI:10.1016/j.materresbull.2012.11.027 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:12 AU: Feng, Huajun;Yu, Liya E.;Zhang, Min-Hong;
10:310:12 Intracellular Silicon Chips in Living Cells
DOI:10.1002/smll.200901041 JN:SMALL PY:2010
TC:8 AU: Gomez-Martinez, Rodrigo;Vazquez, Patricia;Duch, Marta;Muriano, Alejandro;Pinacho, Daniel;Sanvicens, Nuria;Sanchez-Baeza, Francisco;Boya, Patricia;de la Rosa, Enrique J.;Esteve, Jaume;Suarez, Teresa;Plaza, Jose A.;
10:310:13 Photodegradation of methylene blue with sphere-like ZnO particles prepared via aqueous solution
DOI:10.1016/j.ceramint.2013.05.024 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Akin, M. Bora;Oner, Mualla;
10:311:1 Metal Oxides Mono-Dimensional Nanostructures for Gas Sensing and Light Emission
DOI:10.1111/j.1551-2916.2011.05056.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:18 AU: Soldano, Caterina;Comini, Elisabetta;Baratto, Camilla;Ferroni, Matteo;Faglia, Guido;Sberveglieri, Giorgio;
10:311:2 Synthesis of BiFeO3/ZnO core-shell hetero-structures using ZnO nanorod positive templates
DOI:10.1088/0957-4484/22/11/115605 JN:NANOTECHNOLOGY PY:2011
TC:12 AU: Chen, Shih-Wei;Lee, Chia-Ching;Chen, Ming-Teng;Wu, Jenn-Ming;
10:311:3 Electrospun TiO2 nanowires for hybrid photovoltaic cells
DOI:10.1557/jmr.2011.167 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:9 AU: Chuangchote, Surawut;Sagawa, Takashi;Yoshikawa, Susumu;
10:311:4 Preparation and characterization of La1-xSr xFeO3 materials and their formaldehyde gas-sensing properties
DOI:10.1007/s10853-012-6758-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:7 AU: Yao, Peng-Jun;Wang, Jing;Chu, Wen-Ling;Hao, Yu-Wen;
10:311:5 Preparation of Cd-Loaded In2O3 Hollow Nanofibers by Electrospinning and Improvement of Formaldehyde Sensing Performance
DOI:10.1155/2014/431956 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Hu, Ruijin;Wang, Jing;Chen, Pengpeng;Hao, Yuwen;Zhang, Chunli;Li, Xiaogan;
10:311:6 Preparation of LaFeO3 nanofibers by electrospinning for gas sensors with fast response and recovery
DOI:10.1088/0957-4484/22/11/115502 JN:NANOTECHNOLOGY PY:2011
TC:11 AU: Fan, Hui-Tao;Xu, Xiu-Juan;Ma, Xiao-Kang;Zhang, Tong;
10:311:7 Direct integration of metal oxide nanowires into an effective gas sensing device
DOI:10.1088/0957-4484/21/14/145502 JN:NANOTECHNOLOGY PY:2010
TC:18 AU: Vomiero, Alberto;Ponzoni, Andrea;Comini, Elisabetta;Ferroni, Matteo;Faglia, Guido;Sberveglieri, Giorgio;
10:311:8 Electrospun V2O5 composite fibers: Synthesis, characterization and ammonia sensing properties
DOI:10.1016/j.tsf.2013.03.137 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Modafferi, V.;Trocino, S.;Donato, A.;Panzera, G.;Neri, G.;
10:311:9 Gas sensing properties under UV radiation of In2O3 nanostructures processed by electrospinning
DOI:10.1016/j.matchemphys.2014.03.057 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:3 AU: Trocino, S.;Frontera, P.;Donato, A.;Busacca, C.;Scarpino, L. A.;Antonucci, P.;Neri, G.;
10:311:10 Gasochromic response of nanocrystalline vanadium pentoxide films deposited from ethanol dispersions
DOI:10.1016/j.tsf.2010.07.010 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Rizzo, G.;Arena, A.;Bonavita, A.;Donato, N.;Neri, G.;Saitta, G.;
10:311:11 Electrospun TiO2 nanowires for hybrid photovoltaic cells (vol 26, pg 2316, 2011)
DOI:10.1557/jmr.2011.261 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:0 AU: Chuangchote, Surawut;Sagawa, Takashi;Yoshikawa, Susumu;
10:311:12 Violet electroluminescence from poly(N-vinylcarbazole)/ZnO-nanrod composite polymer light-emitting devices
DOI:10.1016/j.synthmet.2010.12.027 JN:SYNTHETIC METALS PY:2011
TC:6 AU: Tu, Ming-Lung;Su, Yan-Kuin;Wu, Shang-Shang;Guo, Tzung-Fang;Wen, Ten-Chin;Huang, Chun-Yuan;
10:311:13 Gas reception and signal transduction of neat tin oxide semiconductor sensor for response to oxygen
DOI:10.1016/j.tsf.2013.03.139 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Yamazoe, Noboru;Suematsu, Koichi;Shimanoe, Kengo;
10:312:1 Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
DOI:10.1002/adma.201200293 JN:ADVANCED MATERIALS PY:2012
TC:25 AU: Ahn, Seung-Eon;Song, Ihun;Jeon, Sanghun;Jeon, Youg Woo;Kim, Young;Kim, Changjung;Ryu, Byungki;Lee, Je-Hun;Nathan, Arokia;Lee, Sungsik;Kim, Gyu Tae;Chung, U-In;
10:312:2 High-Performance Nanowire Oxide Photo-Thin Film Transistors
DOI:10.1002/adma201301102 JN:ADVANCED MATERIALS PY:2013
TC:12 AU: Ahn, Seung-Eon;Jeon, Sanghun;Jeon, Youg Woo;Kim, Changjung;Lee, Myoung-Jae;Lee, Chang-Won;Park, Jongbong;Song, Ihun;Nathan, Arokia;Lee, Sungsik;Chung, U-In;
10:312:3 Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects
DOI:10.1002/adma.201401955 JN:ADVANCED MATERIALS PY:2014
TC:2 AU: Jeon, Sanghun;Song, Ihun;Lee, Sungsik;Ryu, Byungki;Ahn, Seung-Eon;Lee, Eunha;Kim, Young;Nathan, Arokia;Robertson, John;Chung, U-In;
10:312:4 Impact of transparent electrode on photoresponse of ZnO-based phototransistor
DOI:10.1063/1.4855055 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lee, Seunghyup;Ahn, Seung-Eon;Jeon, Yongwoo;Ahn, Ji-Hoon;Song, Ihun;Jeon, Sanghun;Yun, Dong-Jin;Kim, Jungwoo;Choi, Hyung;Chung, U-In;Park, Jaechul;
10:312:5 Polyelectrolyte multilayer-assisted fabrication of p-Cu2S/n-CdS heterostructured thin-film phototransistors
DOI:10.1039/c4tc01428f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Sharma, Ramphal;Cai, Gangri;Shinde, Dipak V.;Patil, Supriya A.;Shaikh, Shaheed;Ghule, Anil Vithal;Mane, Rajaram S.;Han, Sung-Hwan;
10:312:6 The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility
DOI:10.1063/1.4705406 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Choi, Hyun-Sik;Jeon, Sanghun;Kim, Hojung;Shin, Jaikwang;Kim, Changjung;Chung, U-In;
10:312:7 Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination
DOI:10.1063/1.4862318 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Choi, Hyun-Sik;Jeon, Sanghun;
10:312:8 Phototransistor with nanocrystalline Si/amorphous Si bilayer channel
DOI:10.1063/1.3422479 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Vygranenko, Yuri;Nathan, Arokia;Vieira, Manuela;Sazonov, Andrei;
10:313:1 Hydrothermal synthesis and optical properties of antimony sulfide micro and nano-size with different morphologies
DOI:10.1016/j.matlet.2011.12.038 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Sheikhiabadi, Parvaneh Ghaderi;Salavati-Niasari, Masoud;Davar, Fatemeh;
10:313:2 Synthesis and characterization of single-crystal Sb2S3 nanotubes via an EDTA-assisted hydrothermal route
DOI:10.1016/j.matchemphys.2010.04.002 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:11 AU: Chen, Guang-Yi;Zhang, Wan-Xi;Xu, An-Wu;
10:313:3 Preparation of Sb2S3 nanostructures by the [BMIM][BF4] ionic liquid assisted low power sonochemical method
DOI:10.1016/j.matlet.2010.08.044 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Salinas-Estevane, Pablo;Sanchez, Eduardo M.;
10:313:4 Large-scale synthesis of double cauliflower-like Sb2S3 microcrystallines by hydrothermal method
DOI:10.1016/j.jallcom.2013.03.199 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Wu, Lei;Xu, Hanyue;Han, Qiaofeng;Wang, Xin;
10:313:5 Synthesis of Coral-Like, Straw-Tied-Like, and Flower-Like Antimony Sulfides by a Facile Wet-Chemical Method
DOI:10.1155/2013/719679 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Kavinchan, Jutarat;Thongtem, Titipun;Thongtem, Somchai;Saksornchai, Eksuree;
10:313:6 Low-temperature synthesis of uniform Sb2S3 nanorods and its visible-light-driven photocatalytic activities
DOI:10.1016/j.mseb.2009.10.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:13 AU: Han, Qiaofeng;Chen, Liang;Wang, Meijuan;Yang, Xujie;Lu, Lude;Wang, Xin;
10:313:7 Hydrothermal synthesis of double sheaf-like Sb2S3 using copolymer as a crystal splitting agent
DOI:10.1016/j.jallcom.2010.08.003 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Pilapong, Chalermchai;Thongtem, Titipun;Thongtem, Somchai;
10:313:8 Nanoparticles of antimony sulfide by pulsed laser ablation in liquid media
DOI:10.1007/s10853-013-7446-y JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: Garza, Daniel;Grisel Garcia, G.;Mendivil Palma, M. I.;Avellaneda, D.;Castillo, G. A.;Das Roy, T. K.;Krishnan, B.;Shaji, S.;
10:313:9 Efficient adsorption and photocatalytic degradation of Congo red onto hydrothermally synthesized NiS nanoparticles
DOI:10.1007/s11051-013-1475-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:10 AU: Guo, Hongxu;Ke, Yingchang;Wang, Dongfeng;Lin, Kaili;Shen, Ruxiang;Chen, Jianhua;Weng, Wen;
10:313:10 Cyclic microwave assisted synthesis of Sb2S3 dumb-bells using polyvinylpyrrolidone as a template and splitting agent
DOI:10.1016/j.matlet.2010.07.075 JN:MATERIALS LETTERS PY:2010
TC:8 AU: Kavinchan, Jutarat;Thongtem, Titipun;Thongtem, Somchai;
10:313:11 Study of various Sb2S3 nanostructures synthesized by simple solvothermal and hydrothermal methods
DOI:10.1016/j.matchar.2014.06.014 JN:MATERIALS CHARACTERIZATION PY:2014
TC:0 AU: Senthil, T. S.;Muthukumarasamy, N.;Kang, Misook;
10:313:12 Building crystalline Sb2S3 nanowire dandelions with multiple crystal splitting motif
DOI:10.1016/j.matlet.2011.09.074 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Wang, Gonghua;Cheung, Chin Li;
10:313:13 Synthesis and Characterization of Sb2S3 Nanorods via Complex Decomposition Approach
DOI:10.1155/2011/414798 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:3 AU: Alemi, Abdolali;Hanifehpour, Younes;Joo, Sang Woo;
10:313:14 Hydrothermal Synthesis of Sb2S3 Nanorods Using Iodine via Redox Mechanism
DOI:10.1155/2011/186528 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:6 AU: Alemi, Abdolali;Joo, Sang Woo;Hanifehpour, Younes;Khandar, Aliakbar;Morsali, Ali;Min, Bong-Ki;
10:313:15 New fan blade-like core-shell Sb2TixSy photocatalytic nanorod for hydrogen production from methanol/water photolysis
DOI:10.1016/j.ijhydene.2012.12.002 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:2 AU: Kim, Jiyeon;Sohn, Youngku;Kang, Misook;
10:313:16 Synthesis of ternary Ni1-xFexS single crystalline nanorods
DOI:10.1016/j.jallcom.2014.07.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Chang, Xiaoying;Zhang, Zhihua;Wu, Rong;Li, Jin;Jian, Jikang;
10:314:1 Differences in n-type doping efficiency between Al- and Ga-ZnO films
DOI:10.1063/1.4803063 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:12 AU: Gabas, Mercedes;Landa-Canovas, Angel;Luis Costa-Kraemer, Jose;Agullo-Rueda, Fernando;Gonzalez-Elipe, Agustin R.;Diaz-Carrasco, Pilar;Hernandez-Moro, Jorge;Lorite, Israel;Herrero, Pilar;Castillero, Pedro;Barranco, Angel;Ramon Ramos-Barrado, Jose;
10:314:2 Direct observation of the band gap shrinkage in amorphous In2O3-ZnO thin films
DOI:10.1063/1.4802441 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Jia, Junjun;Oka, Nobuto;Shigesato, Yuzo;
10:314:3 Optoelectronic properties of Al:ZnO: Critical dosage for an optimal transparent conductive oxide
DOI:10.1063/1.3567513 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Bazzani, Mirco;Neroni, Andrea;Calzolari, Arrigo;Catellani, Alessandra;
10:314:4 High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering
DOI:10.1016/j.solmat.2011.04.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:20 AU: Gabas, M.;Diaz-Carrasco, P.;Agullo-Rueda, F.;Herrero, P.;Landa-Canovas, A. R.;Ramos-Barrado, J. R.;
10:314:5 Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films
DOI:10.1103/PhysRevB.84.153303 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Gabas, Mercedes;Torelli, Piero;Barrett, Nicholas T.;Sacchi, Maurizio;Bruneval, Fabien;Cui, Ying;Simonelli, Laura;Diaz-Carrasco, Pilar;Ramos Barrado, Jose R.;
10:314:6 Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy
DOI:10.1063/1.4863595 JN:APL MATERIALS PY:2014
TC:3 AU: Gabas, M.;Torelli, P.;Barrett, N. T.;Sacchi, M.;Barrado, Jose R. Ramos;
10:314:7 Electronic structural analysis of transparent In2O3-ZnO films by hard X-ray photoelectron spectroscopy
DOI:10.1016/j.tsf.2009.09.170 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Shibuya, Tadao;Yoshinaka, Masahiro;Shimane, Yukio;Utsuno, Futoshi;Yano, Koki;Inoue, Kazuyoshi;Ikenagab, Eiji;Kim, Jung J.;Ueda, Shigenori;Obata, Masaaki;Kobayashi, Keisuke;
10:314:8 ITO/AZO Double-Layered Transparent Conducting Oxide Films for Organic Photovoltaic Cells
DOI:10.1080/15421406.2014.931772 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Cho, Jung Min;Kim, Joondong;Kim, Hyunyub;Kim, Mingeon;Moon, Sang-Jin;Jo, Jeongdai;Shin, Won Suk;
10:314:9 Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
DOI:10.1063/1.4867236 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chasin, Adrian;Simoen, Eddy;Bhoolokam, Ajay;Nag, Manoj;Genoe, Jan;Gielen, Georges;Heremans, Paul;
10:314:10 LSDA plus U method: A calculation of the U values at the Hartree-Fock level of approximation
DOI:10.1103/PhysRevB.81.245103 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Andriotis, Antonis N.;Sheetz, R. Michael;Menon, Madhu;
10:314:11 Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si
DOI:10.1063/1.4804332 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Nyamhere, C.;Cristiano, F.;Olivie, F.;Essa, Z.;Bedel-Pereira, E.;Bolze, D.;Yamamoto, Y.;
10:315:1 Characterization and properties of ZnO1-xSx alloy films fabricated by radio-frequency magnetron sputtering
DOI:10.1016/j.apsusc.2010.02.061 JN:APPLIED SURFACE SCIENCE PY:2010
TC:20 AU: Pan, H. L.;Yang, T.;Yao, B.;Deng, R.;Sui, R. Y.;Gao, L. L.;Shen, D. Z.;
10:315:2 Solubility limits and phase structures in epitaxial ZnOS alloy films grown by pulsed laser deposition
DOI:10.1016/j.jallcom.2012.04.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: He, Yunbin;Wang, Liangheng;Zhang, Lei;Li, Mingkai;Shang, Xunzhong;Fang, Yanyan;Chen, Changqing;
10:315:3 Growth of non-polar alpha-plane ZnO1-xSx films by pulsed laser deposition
DOI:10.1016/j.matlet.2014.05.150 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Zhou, Yusong;Pan, Xinhua;Li, Yang;Huang, Jingyun;Ye, Zhizhen;
10:315:4 Tuning the composition and optical band gap of pulsed laser deposited ZnO1-xSx alloy films by controlling the substrate temperature
DOI:10.1016/j.jallcom.2014.08.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Zhang, Lei;Li, Lei;Wang, Liangheng;Li, Mingkai;Lu, Yinmei;Meyer, Bruno K.;He, Yunbin;
10:315:5 Structural and optical properties of single-phase ZnO1-xSx alloy films epitaxially grown by pulsed laser deposition
DOI:10.1016/j.jallcom.2013.10.201 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: He, Yunbin;Zhang, Lei;Wang, Liangheng;Li, Mingkai;Shang, Xunzhong;Liu, Xiong;Lu, Yinmei;Meyer, Bruno K.;
10:315:6 Structure and optical band gap of ZnO1-xSx thin films synthesized by chemical spray pyrolysis for application in solar cells
DOI:10.1063/1.4754014 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Thankalekshmi, Ratheesh R.;Rastogi, A. C.;
10:315:7 Wavelength tunable photoluminescence of ZnO1-xSx alloy thin films grown by reactive sputtering
DOI:10.1063/1.4820383 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Xu, Hongbin;Zhu, Liping;Jiang, Jie;Cai, Hui;Chen, Wenfeng;Hu, Liang;Guo, Yanmin;Ye, Zhizhen;
10:315:8 Electronic and optical properties of CdZnO quantum well structures with electric field and polarization effects
DOI:10.1063/1.3340946 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Jeon, H. C.;Park, S. H.;Lee, S. J.;Kang, T. W.;George, T. F.;
10:315:9 Ab-initio study of fundamental properties of ternary ZnO1-xSx alloys by using special quasi-random structures
DOI:10.1016/j.commatsci.2014.04.032 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:1 AU: Rashid, Muhammad;Noor, N. A.;Sabir, Bushra;Ali, S.;Sajjad, M.;Hussain, F.;Khan, N. U.;Amin, B.;Khenata, R.;
10:315:10 Realization of p-type Se-N co-doped ZnO films by radio-frequency magnetron sputtering
DOI:10.1016/j.matlet.2013.07.008 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Cai, Hui;Xu, Hongbin;Ye, Zhizhen;Huang, Jingyun;
10:315:11 Nonlinear Optical Properties in a Strained ZnxCd1-xO/Zn0.1Mg0.9O Quantum Dot
DOI:10.1166/jctn.2013.2885 JN:JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE PY:2013
TC:0 AU: Elangovan, R.;Peter, A. John;Yoo, Chang Kyoo;
10:316:1 A ZnO-Nanowire Phototransistor Prepared on Glass Substrates
DOI:10.1021/am100746c JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:35 AU: Weng, W. Y.;Chang, S. J.;Hsu, C. L.;Hsueh, T. J.;
10:316:2 Field Emission Properties of Gold Nanoparticle-Decorated ZnO Nanopillars
DOI:10.1021/am301848a JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:19 AU: Chang, Yuan-Ming;Lin, Man-Ling;Lai, Tung-Yen;Lee, Hsin-Yi;Lin, Chih-Ming;Wu, Yew-Chung Sermon;Juang, Jenh-Yih;
10:316:3 Field Emission in Vertically Aligned ZnO/Si-Nanopillars with Ultra Low Turn-On Field
DOI:10.1021/am201667m JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:17 AU: Chang, Yuan-Ming;Liu, Mao-Chen;Kao, Pin-Hsu;Lin, Chih-Ming;Lee, Hsin-Yi;Juang, Jenh-Yih;
10:316:4 Modelling the growth of ZnO nanocombs based on the piezoelectric effect
DOI:10.1063/1.4824616 JN:AIP ADVANCES PY:2013
TC:2 AU: Comjani, F. Fattahi;Willer, U.;Kontermann, S.;Schade, W.;
10:316:5 Structure, optical properties and visible-light-induced photochemical activity of nanocrystalline ZnO films deposited by atomic layer deposition onto Si(100)
DOI:10.1016/j.tsf.2014.11.023 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Drozd, V. E.;Titov, V. V.;Kasatkin, I. A.;Basov, L. L.;Lisachenko, A. A.;Stroyuk, O. L.;Kuchmiy, S. Y.;
10:316:6 Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition
DOI:10.1021/am201062t JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:13 AU: Chang, Yuan-Ming;Shieh, Jiann;Chu, Pei-Yuan;Lee, Hsin-Yi;Lin, Chih-Ming;Juang, Jenh-Yih;
10:316:7 Electrochemical synthesis of ZnO nanoflowers and nanosheets on porous Si as photoelectric materials
DOI:10.1016/j.apsusc.2010.12.108 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Kou, Huanhuan;Zhang, Xin;Du, Yongling;Ye, Weichun;Lin, Shaoxiong;Wang, Chunming;
10:316:8 Role of nanocrystalline ZnO coating on the stability of porous silicon formed on textured (1 0 0) Si
DOI:10.1016/j.apsusc.2013.08.094 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Verma, Daisy;Sharma, Shailesh N.;Kharkwal, Aneeta;Bhagavannarayana, G.;Kumar, Mahesh;Singh, Shiv Nath;Singh, Parakram Kumar;Mehdib, Syed Sazad;Husain, Mushahid;
10:316:9 Dual-Gate Multiple-Channel ZnO Nanowire Transistors
DOI:10.1007/s11664-009-0984-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:1 AU: Kim, Dong-Joo;Hyung, Jung-Hwan;Seo, Deok-Won;Suh, Duk-Il;Lee, Sang-Kwon;
10:317:1 Facile hydrothermal preparation of hierarchically assembled, porous single-crystalline ZnO nanoplates and their application in dye-sensitized solar cells
DOI:10.1039/b917305f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:67 AU: Qiu, Yongcai;Chen, Wei;Yang, Shihe;
10:317:2 Precursor-Directed Self-Assembly of Porous ZnO Nanosheets as High-Performance Surface-Enhanced Raman Scattering Substrate
DOI:10.1002/smll.201300440 JN:SMALL PY:2014
TC:9 AU: Liu, Qian;Jiang, Li;Guo, Lin;
10:317:3 Solution-processable ZnO nanoparticles obtained by low-temperature solventless synthesis
DOI:10.1039/c0jm03812a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:5 AU: Estruga, Marc;Domingo, Concepcion;Ayllon, Jose A.;
10:317:4 ZnO Nanosheets Derived from Surfactant-Directed Process: Growth Mechanism, and Application in Dye-Sensitized Solar Cells
DOI:10.1111/j.1551-2916.2011.05030.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:10 AU: Li, Hui;Zhang, Yu;Wang, John;
10:317:5 Hydrothermal synthesis of Mn vanadate nanosheets and visible-light photocatalytic performance for the degradation of methyl blue
DOI:10.1016/j.materresbull.2013.03.011 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Pei, L. Z.;Xie, Y. K.;Pei, Y. Q.;Jiang, Y. X.;Yu, H. Y.;Cai, Z. Y.;
10:317:6 Zinc Oxide Nanostructures by Solvothermal Synthesis
DOI:10.1080/15421406.2012.634363 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:1 AU: Segovia, M.;Sotomayor, C.;Gonzalez, G.;Benavente, E.;
10:317:7 Photoluminescence and SERS investigation of plasma treated ZnO nanorods
DOI:10.1016/j.apsusc.2013.08.120 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Lee, Szetsen;Peng, Jr-Wei;Liu, Chih-Sheng;
10:317:8 Enhancing the SERS performance of semiconductor nanostructures through a facile surface engineering strategy
DOI:10.1016/j.apsusc.2014.09.120 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Jin, Liangliang;She, Guangwei;Wang, Xiaotian;Mu, Lixuan;Shi, Wensheng;
10:318:1 Synthesis of ZnO nanoparticles by modified polyol method
DOI:10.1016/j.matlet.2012.01.004 JN:MATERIALS LETTERS PY:2012
TC:24 AU: Chieng, Buong Woei;Loo, Yuet Ying;
10:318:2 Seed-free electrochemical growth of ZnO nanotube arrays on single-layer graphene
DOI:10.1016/j.matlet.2011.12.057 JN:MATERIALS LETTERS PY:2012
TC:21 AU: Xu, Chunju;Kim, Byung-Sung;Lee, Jae-Hyun;Kim, Minjin;Hwang, Sung Woo;Choi, Byong Lyong;Lee, Eun Kyung;Kim, Jong Min;Whang, Dongmok;
10:318:3 Synthesis of ZnO nanoparticles and flower-like nanostructures using nonsono- and sono-electrooxidation methods
DOI:10.1016/j.matlet.2012.10.064 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Kazeminezhad, Iraj;Sadollahkhani, Azar;Farbod, Mansoor;
10:318:4 Synthesis of Al-doping ZnO nanoparticles via mechanochemical method and investigation of their structural and optical properties
DOI:10.1016/j.matlet.2013.07.059 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Echresh, Ahmad;Shoushtari, Morteza Zargar;
10:318:5 Photocatalytic degradation of Eriochrome black-T dye using ZnO nanoparticles
DOI:10.1016/j.matlet.2014.01.118 JN:MATERIALS LETTERS PY:2014
TC:9 AU: Kazeminezhad, Iraj;Sadollahkhani, Azar;
10:318:6 Magnetic distributions of iron-(nickel zinc ferrite) nanocomposites from first order reversal curve analysis
DOI:10.1063/1.4803545 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Giri, Anit K.;Hirsh, Gary;Duncan, Kate J.;Karna, Shashi P.;Dennis, C. L.;
10:318:7 Effect of growth angle and post-growth annealing on the structural and optical properties of ZnO nanorods grown hydrothermally on p-Si substrate
DOI:10.1016/j.matlet.2013.08.020 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Echresh, Ahmad;Shoushtari, Morteza Zargar;Farbod, Mansoor;
10:318:8 Distinguishing magnetic particle size of iron oxide nanoparticles with first-order reversal curves
DOI:10.1063/1.4896481 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Kumari, Monika;Widdrat, Marc;Eva Tompa;Uebe, Rene;Schueler, Dirk;Mihaly Posfai;Faivre, Damien;Hirt, Ann M.;
10:318:9 Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs
DOI:10.1016/j.jcrysgro.2010.02.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:16 AU: Soh, C. B.;Tay, C. B.;Chua, S. J.;Le, H. Q.;Ang, N. S. S.;Teng, J. H.;
10:318:10 Electromagnetic properties of NiZn ferrite nanoparticles and their polymer composites
DOI:10.1063/1.4873235 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Parsons, P.;Duncan, K.;Giri, A. K.;Xiao, J. Q.;Karna, S. P.;
10:318:11 Electrochemical synthesis of nanostructured nickel oxide powder using nickel as anode
DOI:10.1016/j.matlet.2013.05.022 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Boroun, Zh.;Vaezi, M. R.;Kavei, G.;Youzbashi, A. A.;Kazeminezhad, I.;
10:319:1 Electrochemically grown vertically aligned ZnO nanorod array/p(+)-Si (100) heterojunction contact diodes
DOI:10.1016/j.tsf.2013.09.091 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Rodriguez-Moreno, Jorge;Navarrete-Astorga, Elena;Romero, Rocio;Martin, Francisco;Schrebler, Ricardo;Ramos-Barrado, Jose R.;Dalchiele, Enrique A.;
10:319:2 Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques
DOI:10.1016/j.tsf.2012.10.067 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Rodriguez-Moreno, Jorge;Navarrete-Astorga, Elena;Martin, Francisco;Schrebler, Ricardo;Ramos-Barrado, Jose R.;Dalchiele, Enrique A.;
10:319:3 Properties of sol-gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction
DOI:10.1016/j.matchemphys.2013.08.043 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:3 AU: Soylu, Murat;Yakuphanoglu, Fahrettin;
10:319:4 Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector
DOI:10.1016/j.mseb.2011.03.003 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:9 AU: Zhou, Hai;Fang, Guo-Jia;Liu, Nishuang;Zhao, Xing-Zhong;
10:319:5 Properties of PEDOT:PEG/ZnO/p-Si heterojunction diode
DOI:10.1016/j.mseb.2012.03.025 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:8 AU: Soylu, Murat;Girtan, Mihaela;Yakuphanoglu, Fahrettin;
10:319:6 Effect of hydrogen peroxide treatment on the electrical characteristics of Au/ZnO epitaxial Schottky diode
DOI:10.1016/j.mssp.2010.12.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:9 AU: Singh, C. S.;Agarwal, G.;Rao, G. Durga;Chaudhary, Sujeet;Singh, R.;
10:319:7 Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz
DOI:10.1016/j.tsf.2011.03.021 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Lee, Deuk-Hee;Park, Dong-Hoon;Kim, Sangsig;Lee, Sang Yeol;
10:320:1 Core/shell structured ZnO/SiO2 nanoparticles: Preparation, characterization and photocatalytic property
DOI:10.1016/j.apsusc.2010.06.091 JN:APPLIED SURFACE SCIENCE PY:2010
TC:47 AU: Zhai, Jing;Tao, Xia;Pu, Yuan;Zeng, Xiao-Fei;Chen, Jian-Feng;
10:320:2 Controllable electrodeposition of ZnO nanorod arrays on flexible stainless steel mesh substrate for photocatalytic degradation of Rhodamine B
DOI:10.1016/j.apsusc.2014.08.153 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Lu, Hui;Zhang, Mei;Guo, Min;
10:320:3 Natural resource limitations to terawatt-scale solar cells
DOI:10.1016/j.solmat.2011.06.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:39 AU: Tao, Coby S.;Jiang, Jiechao;Tao, Meng;
10:320:4 Effective photocatalytic decolorization of methylene blue utilizing ZnO/rectorite nanocomposite under simulated solar irradiation
DOI:10.1016/j.jallcom.2014.07.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Li Shi-qian;Zhou Pei-jiang;Zhang Wan-shun;Chen Sheng;Peng Hong;
10:320:5 Photocatalytic degradation in aqueous solution using quantum-sized ZnO particles supported on sepiolite
DOI:10.1016/j.jcis.2010.07.052 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:23 AU: Xu, W. G.;Liu, S. F.;Lu, S. X.;Kang, S. Y.;Zhou, Y.;Zhang, H. F.;
10:320:6 Low-temperature hydrothermal synthesis of ZnO nanosheet using organic/inorganic composite as seed layer
DOI:10.1016/j.matlet.2012.07.033 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Ueno, Naoyuki;Yamamoto, Akinobu;Uchida, Yoshiaki;Egashira, Yasuyuki;Nishiyama, Norikazu;
10:320:7 ZnO Nanoparticles Immobilized on Flaky Layered Double Hydroxides as Photocatalysts with Enhanced Adsorptivity for Removal of Acid Red G
DOI:10.1021/la1019313 JN:LANGMUIR PY:2010
TC:31 AU: Zhi, Yun;Li, Yaogang;Zhang, Qinghong;Wang, Hongzhi;
10:320:8 Synthesis of silica coated zinc oxide-poly(ethylene-co-acrylic acid) matrix and its UV shielding evaluation
DOI:10.1016/j.materresbull.2013.12.004 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:3 AU: Ramasamy, Mohankandhasamy;Kim, Yu Jun;Gao, Haiyan;Yi, Dong Kee;An, Jeong Ho;
10:320:9 A greener electrodeposition recipe for ZnO films in terawatt photovoltaics
DOI:10.1016/j.tsf.2012.07.038 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Zhou, Bin;Han, Xiaofei;Feng, Qing;Tao, Meng;
10:320:10 Mechanism for wettability alteration of ZnO nanorod arrays via thermal annealing in vacuum and air
DOI:10.1016/j.apsusc.2012.11.013 JN:APPLIED SURFACE SCIENCE PY:2013
TC:9 AU: Zhang, Jun;Liu, Yanru;Wei, Zhiyang;Zhang, Junyan;
10:320:11 Synthesis of mesoporous ZnO, AZO, and BZO transparent conducting films using nonionic triblock copolymer as template
DOI:10.1016/j.matlet.2013.03.011 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Ueno, Naoyuki;Dwijaya, Bram;Uchida, Yoshiaki;Egashira, Yasuyuki;Nishiyama, Norikazu;
10:320:12 Structural and spectral investigations of Rhodamine (Rh6G) dye-silica core-shell nanoparticles
DOI:10.1016/j.optmat.2011.11.003 JN:OPTICAL MATERIALS PY:2012
TC:4 AU: Al Dwayyan, A. S.;Qaid, Saif M. H.;Khan, M. A. Majeed;Al Salhi, M. S.;
10:321:1 Exchange bias in single-crystalline CuO nanowires
DOI:10.1063/1.3428658 JN:APPLIED PHYSICS LETTERS PY:2010
TC:20 AU: Diaz-Guerra, C.;Vila, M.;Piqueras, J.;
10:321:2 Transforming from paramagnetism to room temperature ferromagnetism in CuO by ball milling
DOI:10.1063/1.3670360 JN:AIP ADVANCES PY:2011
TC:3 AU: Gao, Daqiang;Yang, Zhaolong;Zhang, Jing;Yang, Guijin;Zhu, Zhonghua;Qi, Jing;Si, Mingsu;Xue, Desheng;
10:321:3 Room-temperature ferromagnetism in CuO sol-gel powders and films
DOI:10.1016/j.jmmm.2010.01.021 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:21 AU: Qin, Hongwei;Zhang, Zhongli;Liu, Xing;Zhang, Yongjia;Hu, Jifan;
10:321:4 Aligned CuO nanorod arrays: fabrication and anisotropic ferromagnetism
DOI:10.1007/s00339-013-7958-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Liu, Liqing;Hong, Kunquan;Ge, Xing;Xu, Mingxiang;
10:321:5 Magnetic hardness features and loop shift in nanostructured CuO
DOI:10.1063/1.4758307 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Bianchi, A. E.;Stewart, S. J.;Zysler, R. D.;Punte, G.;
10:321:6 ZnO nanobarbed fibers: Fabrication, sensing NO2 gas, and their sensing mechanism
DOI:10.1063/1.3590202 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Lee, Hyun-Uk;Ahn, Kyun;Lee, Su-Jae;Kim, Jong-Pil;Kim, Hyun-Gyu;Jeong, Se-Young;Cho, Chae-Ryong;
10:321:7 Hydrothermal synthesis and ferromagnetism of CuO nanosheets
DOI:10.1016/j.apsusc.2011.06.099 JN:APPLIED SURFACE SCIENCE PY:2011
TC:14 AU: Zhao, J. G.;Liu, S. J.;Yang, S. H.;Yang, S. G.;
10:321:8 Effects of coexisting spin disorder and antiferromagnetism on the magnetic behavior of nanostructured (Fe79Mn21)(1-x)Cu-x alloys
DOI:10.1063/1.4881498 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Mizrahi, M.;Cabrera, A. F.;Stewart, S. J.;Desimoni, J.;
10:321:9 Spin glass behavior of mechanically alloyed fcc-(Fe79Mn21)(1-x)Cu-x (0.00 < x < 0.30)
DOI:10.1063/1.3309223 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Mizrahi, M.;Cabrera, A. F.;Desimoni, J.;
10:321:10 Effect of aging on the magnetic characteristics of nickel nanowires embedded in polycarbonate
DOI:10.1063/1.3603006 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Maaz, K.;Ishrat, S.;Karim, S.;Kim, Gil-Ho;
10:322:1 Preparation and photocatalytic property of mesoporous ZnO/SnO2 composite nanofibers
DOI:10.1016/j.jallcom.2010.04.211 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:44 AU: Liu, Ruilai;Huang, Yingxing;Xiao, Aihua;Liu, Haiqing;
10:322:2 Synthesis of electrospun ZnO/CuO nanocomposite fibers and their dielectric and non-linear optic studies
DOI:10.1016/j.jallcom.2010.07.161 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:14 AU: Vijayakumar, G. Nixon Samuel;Devashankar, S.;Rathnakumari, M.;Sureshkumar, P.;
10:322:3 The roles of various Ni species over SnO2 in enhancing the photocatalytic properties for hydrogen generation under visible light irradiation
DOI:10.1016/j.apsusc.2014.03.043 JN:APPLIED SURFACE SCIENCE PY:2014
TC:6 AU: Du, Quanchao;Lu, Gongxuan;
10:322:4 Surfactant-assisted photochemical deposition of three-dimensional nanoporous nickel oxyhydroxide films and their energy storage and conversion properties
DOI:10.1039/c3ta00968h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:4 AU: Zhang, Liying;Zhong, Yuan;He, Zhishun;Wang, Jianming;Xu, Jing;Cai, Jing;Zhang, Na;Zhou, Huan;Fan, Huiqing;Shao, Haibo;Zhang, Jianqing;Cao, Chu-nan;
10:322:5 Synthesis of p-type NiO/n-type ZnO heterostructure and its enhanced photocatalytic activity
DOI:10.1016/j.scriptamat.2013.05.040 JN:SCRIPTA MATERIALIA PY:2013
TC:8 AU: Tian, Fengshou;Liu, Yanli;
10:322:6 Effect of reduction treatment on structural properties of TiO2 supported Pt nanoparticles and their catalytic activity for formaldehyde oxidation
DOI:10.1039/c1jm10413f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:29 AU: Huang, Haibao;Leung, Dennis Y. C.;Ye, Daiqi;
10:322:7 Photoinduced charge separation enhanced by the confinement of electron donor and acceptor at different surfaces of porous TiO2 nanotubes and its application in olefin oxidation
DOI:10.1039/c2jm31549a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:0 AU: Cui, Guan-wei;Shi, Xi-Feng;Li, Na;Wang, Chongbin;Dong, Yu-Bin;Wang, Xu;Tang, Bo;
10:322:8 Carbon nanotubes and nanofibers synthesized by CVD on nickel coatings deposited with a vacuum arc
DOI:10.1016/j.jallcom.2009.11.162 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:3 AU: Escobar, M.;Giuliani, L.;Candal, R. J.;Lamas, D. G.;Caso, A.;Rubiolo, G.;Grondona, D.;Goyanes, S.;Marquez, A.;
10:322:9 TiO2/CuPc hybrid nanocomposites prepared by low-energy ball milling for dye-sensitized solar cell application
DOI:10.1016/j.mseb.2010.05.022 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Mekprasart, W.;Jarernboon, W.;Pecharapa, W.;
10:323:1 Promising electron field emitters composed of conducting perovskite LaNiO3 shells on ZnO nanorod arrays
DOI:10.1039/c2jm32483k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Yang, Tung-Han;Harn, Yeu-Wei;Chiu, Kuan-Chang;Fan, Cheng-Li;Wu, Jenn-Ming;
10:323:2 Vapor treatment of nanocrystalline WO3 photoanodes for enhanced photoelectrochemical performance in the decomposition of water
DOI:10.1039/c1jm14785d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:16 AU: Hsiao, Po-Tsung;Chen, Liang-Che;Li, Tzung-Luen;Teng, Hsisheng;
10:323:3 Ultrasensitive visible light photoresponse and electrical transportation properties of nonstoichiometric indium oxide nanowire arrays by electrospinning
DOI:10.1039/c3tc31051e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Huang, Siya;Ou, Gang;Cheng, Jing;Li, Heping;Pan, Wei;
10:323:4 Highly Ordered Mesoporous TiO2-Fe2O3 Mixed Oxide Synthesized by Sol-Gel Pathway: An Efficient and Reusable Heterogeneous Catalyst for Dehalogenation Reaction
DOI:10.1021/am301394u JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:25 AU: Patra, Astam K.;Dutta, Arghya;Bhaumik, Asim;
10:323:5 Silicon Rice-Straw Array Emitters and Their Superior Electron Field Emission
DOI:10.1021/am100716y JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:11 AU: Wu, Hung-Chi;Tsai, Hung-Yin;Chiu, Hsin-Tien;Lee, Chi-Young;
10:323:6 Molecular based, chimie douce approach to 0D and 1D indium oxide nanostructures. Evaluation of their sensing properties towards CO and H-2
DOI:10.1039/c0jm01490g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:18 AU: Pashchanka, Mikhail;Hoffmann, Rudolf C.;Gurlo, Aleksander;Schneider, Joerg J.;
10:323:7 Microstructural and chemical variation of TiO2 electrodes in DSSCs after ethanol vapour treatment
DOI:10.1016/j.mseb.2012.10.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:1 AU: Chen, Yanhui;Zhang, Hongzhou;Fox, Daniel;Faulkner, Colm C.;Jeng, David;Bari, Mazhar;
10:324:1 Improved UV resistance in wood through the hydrothermal growth of highly ordered ZnO nanorod arrays
DOI:10.1007/s10853-012-6304-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:10 AU: Sun, Qingfeng;Lu, Yun;Zhang, Haimin;Yang, Dongjiang;Wang, Yun;Xu, Jiasheng;Tu, Jinchun;Liu, Yixing;Li, Jian;
10:324:2 Cross-Linked ZnO Nanowalls Immobilized onto Bamboo Surface and Their Use as Recyclable Photocatalysts
DOI:10.1155/2014/687350 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Jin, Chunde;Li, Jingpeng;Wang, Jin;Han, Shenjie;Wang, Zhe;Sun, Qingfeng;
10:324:3 Process of in situ forming well-aligned Zinc Oxide nanorod arrays on wood substrate using a two-step bottom-up method
DOI:10.1016/j.jcis.2013.06.043 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:4 AU: Liu, Yongzhuang;Fu, Yanchun;Yu, Haipeng;Liu, Yixing;
10:324:4 Growth of TiO2 coating on wood surface using controlled hydrothermal method at low temperatures
DOI:10.1016/j.apsusc.2010.03.053 JN:APPLIED SURFACE SCIENCE PY:2010
TC:29 AU: Li, Jian;Yu, Haipeng;Sun, Qingfeng;Liu, Yixing;Cui, Yongzhi;Lu, Yun;
10:324:5 Hydrothermal synthesis of zirconium dioxide coating on the surface of wood with improved UV resistance
DOI:10.1016/j.apsusc.2014.09.135 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Wan, Caichao;Lu, Yun;Sun, Qingfeng;Li, Jian;
10:324:6 Growth of hydrophobic TiO2 on wood surface using a hydrothermal method
DOI:10.1007/s10853-011-5750-y JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:25 AU: Sun, Qingfeng;Lu, Yun;Liu, Yixing;
10:324:7 Prolonging the combustion duration of wood by TiO2 coating synthesized using cosolvent-controlled hydrothermal method
DOI:10.1007/s10853-010-4758-z JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:12 AU: Sun, Qingfeng;Yu, Haipeng;Liu, Yixing;Li, Jian;Cui, Yongzhi;Lu, Yun;
10:324:8 Hydrothermal fabrication of rutile TiO2 submicrospheres on wood surface: An efficient method to prepare UV-protective wood
DOI:10.1016/j.matchemphys.2012.01.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:13 AU: Sun, Qingfeng;Lu, Yun;Zhang, Haimin;Zhao, Huijun;Yu, Haipeng;Xu, Jiasheng;Fu, Yanchun;Yang, Dongjiang;Liu, Yixing;
10:324:9 Surface characteristics of coated soft- and hardwoods due to UV-B ageing
DOI:10.1016/j.apsusc.2010.05.097 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Ncube, E.;Meincken, M.;
10:324:10 ZnO nanoparticle-containing emulsions for transparent, hydrophobic UV-absorbent films
DOI:10.1016/j.jcis.2010.01.032 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:10 AU: Tigges, Britta;Moeller, Martin;Weichold, Oliver;
10:324:11 Study of a sol-gel process in the preparation of hybrid coatings for corrosion protection using FTIR and H-1 NMR methods
DOI:10.1016/j.jnoncrysol.2014.04.013 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2014
TC:4 AU: Rodic, Peter;Iskra, Jernej;Milosev, Ingrid;
10:325:1 Structural properties of zinc oxide deposited using atmospheric pressure combustion chemical vapour deposition
DOI:10.1016/j.tsf.2014.06.042 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Zunke, I.;Wolf, S.;Heft, A.;Schimanski, A.;Gruenler, B.;Ronning, C.;Seidel, P.;
10:325:2 Properties of Sb-doped SnO2 transparent conductive thin films deposited by radio-frequency magnetron sputtering
DOI:10.1016/j.tsf.2013.06.077 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Yang, Wenhao;Yu, Shihui;Zhang, Yang;Zhang, Weifeng;
10:325:3 Synthesis of c-axis preferred orientation ZnO:Al transparent conductive thin films using a novel solvent method
DOI:10.1016/j.tsf.2010.03.143 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Tseng, Yung-Kuan;Gao, Guo-Jhan;Chien, Shih-Chun;
10:325:4 Impact of water corrosion on nanoscale conductance on aluminum doped zinc oxide
DOI:10.1016/j.tsf.2013.03.100 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Kim, Jong-Hun;Lee, Hyunsoo;Choi, Sunghyun;Bae, Kyoung Hwan;Park, Jeong Young;
10:325:5 Conductive zinc oxide thin film coatings by combustion chemical vapour deposition at atmospheric pressure
DOI:10.1016/j.tsf.2012.11.151 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Zunke, I.;Heft, A.;Schaefer, P.;Haidu, F.;Lehmann, D.;Gruenler, B.;Schimanski, A.;Zahn, D. R. T.;
10:325:6 The influences of high energetic oxygen negative ions and active oxygen on the microstructure and electrical properties of ZnO:Al films by MF magnetron sputtering
DOI:10.1016/j.apsusc.2012.05.027 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Hao, Changshan;Xie, Bin;Li, Ming;Wang, Haiqian;Jiang, Yousong;Song, Yizhou;
10:325:7 Structural, optical, and electrical properties of AZO films by tilted angle sputtering method
DOI:10.1016/j.tsf.2010.02.075 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Leem, J. W.;Yu, J. S.;
10:325:8 The use of silver(I)-2-[2-(2-methoxyethoxy)ethoxy]acetate as precursor in the deposition of thin silver layers on float glass by the atmospheric pressure combustion chemical vapor deposition process
DOI:10.1016/j.tsf.2010.05.082 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Struppert, Thomas;Jakob, Alexander;Heft, Andreas;Gruenler, Bernd;Lang, Heinrich;
10:325:9 Solution derived ZnO:Al films with low resistivity
DOI:10.1016/j.tsf.2012.09.059 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Schellens, K.;Capon, B.;De Dobbelaere, C.;Detavernier, C.;Hardy, A.;Van Bael, M. K.;
10:325:10 Electronic transport and optical properties of thin oxide films
DOI:10.1016/j.tsf.2009.12.036 JN:THIN SOLID FILMS PY:2010
TC:9 AU: El Amrani, A.;Hijazi, F.;Lucas, B.;Boucle, J.;Aldissi, M.;
10:325:11 Thin functional films by combustion chemical vapour deposition (C-CVD)
DOI:10.1016/j.tsf.2011.06.048 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Struppert, Thomas;Heft, Andreas;Gruenler, Bernd;
10:325:12 Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt
DOI:10.1016/j.mseb.2010.02.012 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:9 AU: Xu, Jiwen;Wang, Hua;Yang, Ling;Jiang, Minghong;Wei, Shuai;Zhang, Tingting;
10:326:1 Effect of thermal treatment on the performance of ZnO based metal-insulator-semiconductor ultraviolet photodetectors
DOI:10.1063/1.3467204 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Ali, Ghusoon M.;Chakrabarti, P.;
10:326:2 Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector
DOI:10.1063/1.3427417 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Yadav, Harish Kumar;Sreenivas, K.;Gupta, Vinay;
10:326:3 Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles
DOI:10.1016/j.apsusc.2013.03.124 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Hu, Zhan-Shuo;Hung, Fei-Yi;Chen, Kuan-Jen;Chang, Shoou-Jinn;Hsieh, Wei-Kang;Liao, Tsai-Yu;Chen, Tse-Pu;
10:326:4 Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation
DOI:10.1063/1.3291133 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:28 AU: Yadav, Harish Kumar;Sreenivas, K.;Gupta, Vinay;
10:326:5 A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques
DOI:10.1063/1.4714715 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Yadav, Harish Kumar;Gupta, Vinay;
10:326:6 Performance Enhancement of ZnO UV Photodetectors by Surface Plasmons
DOI:10.1021/am405292p JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:9 AU: Tian, Chunguang;Jiang, Dayong;Li, Baozeng;Lin, Jingquan;Zhao, Yajun;Yuan, Wenxiang;Zhao, Jianxun;Liang, Qingcheng;Gao, Shang;Hou, Jianhua;Qin, Jieming;
10:326:7 Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching
DOI:10.1016/j.jallcom.2010.11.018 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Hu, Zhan-Shuo;Hung, Fei-Yi;Chang, Shoou-Jinn;Huang, Bohr-Ran;Lin, Bo-Cheng;Chen, Kuan-Jen;Hsu, Wen-I.;
10:326:8 Effects of continuous annealing on the performance of ZnO based metal-semiconductor-metal ultraviolet photodetectors
DOI:10.1016/j.mseb.2014.01.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:5 AU: Tian, Chunguang;Jiang, Dayong;Zhao, Yajun;Liu, Qingfei;Hou, Jianhua;Zhao, Jianxun;Liang, Qingcheng;Gao, Shang;Qin, Jieming;
10:326:9 Investigation of the blue-green emission and UV photosensitivity of Cu-doped ZnO films
DOI:10.1016/j.mssp.2013.03.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Li, F. M.;Zhu, C. T.;Ma, S. Y.;Sun, A. M.;Song, H. S.;Li, X. B.;Wang, X.;
10:326:10 Band gap control and photoluminescence properties of Ba(Co2xTi1-x)O-3 thin films prepared by Sol-gel method
DOI:10.1007/s00339-014-8471-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Srivastava, Anchal;Misra, Kamakhya Prakash;
10:326:11 Plasmonic enhancement of optical absorption of UV radiation by Au nanoparticles dispersed on ZnO thin film
DOI:10.1007/s00339-014-8462-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Rajan, Akshta;Yadav, Harish K.;Gupta, Vinay;Tomar, Monika;
10:326:12 Fabrication and characterization of thin film ZnO Schottky contacts based UV photodetectors: A comparative study
DOI:10.1116/1.3701945 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:7 AU: Ali, Ghusoon M.;Chakrabarti, Parthasarathi;
10:326:13 Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements
DOI:10.1016/j.mseb.2011.10.003 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:4 AU: Mtangi, W.;Auret, F. D.;Chawanda, A.;van Rensburg, P. J. Janse;Coelho, S. M. M.;Nel, J. M.;Diale, M.;van Schalkwyk, L.;Nyamhere, C.;
10:326:14 Structural and optical properties of ZnO films produced by a modified ultrasonic spray pyrolysis technique
DOI:10.1016/j.tsf.2013.11.011 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Silva, T. G.;Silveira, E.;Ribeiro, E.;Machado, K. D.;Mattoso, N.;Huemmelgen, I. A.;
10:326:15 Effect of aerosol carriers on ultrasonically prepared nanocrystalline ZnO powders
DOI:10.1016/j.apt.2010.10.011 JN:ADVANCED POWDER TECHNOLOGY PY:2011
TC:4 AU: Patil, L. A.;Bari, A. R.;Shinde, M. D.;Deo, Vinita;Kaushik, M. P.;
10:326:16 Core-Shell Structure of a Silicon Nanorod/Carbon Nanotube Field Emission Cathode
DOI:10.1155/2012/369763 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Huang, Bohr-Ran;Yang, Ying-Kan;Lin, Tzu-Ching;Yang, Wen-Luh;
10:327:1:1 Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts
DOI:10.1016/j.mseb.2012.04.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:6 AU: Qasrawi, A. F.;Gasanly, N. M.;
10:327:1:2 Hall mobility and photoconductivity in TlGaSeS crystals
DOI:10.1063/1.4775577 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Qasrawi, A. F.;Gasanly, N. M.;
10:327:1:3 Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals
DOI:10.1016/j.jallcom.2011.01.065 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Gasanly, N. M.;
10:327:1:4 Measurements of transport properties of TlGaSe2 crystals
DOI:10.1016/j.matchemphys.2009.08.034 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:6 AU: Shaban, H. T.;
10:327:1:5 Study of the switching phenomena of TlGaS2 single crystals
DOI:10.1016/j.apsusc.2010.10.140 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Al Ghamdi, A. A.;Nagat, A. T.;Bahabri, F. S.;Al Orainy, R. H.;Al Garni, S. E.;
10:327:1:6 Influence of temperature on the thermal transport properties of a TlGaSSe compound
DOI:10.1016/j.jcrysgro.2013.05.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Al Garni, S. E.;
10:327:2:1 Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes
DOI:10.1007/s11664-013-2740-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Qasrawi, A. F.;Khanfar, H. K.;
10:327:2:2 Illumination Effects on the Capacitance Spectra and Signal Quality Factor of Al/InSe/C Microwave Sensors
DOI:10.1007/s11664-013-2502-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Qasrawi, A. F.;
10:327:2:3 Effects of Laser Excitation and Temperature on Ag/GaSe0.5S0.5/C Microwave Filters
DOI:10.1007/s11664-014-3296-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:1 AU: Qasrawi, A. F.;Khanfar, H. K.;
10:327:2:4 Effects of photoexcitation on the current transport mechanism in amorphous indium selenide thin films
DOI:10.1080/14786431003767041 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:4 AU: Qasrawi, A. F.;
10:327:2:5 Structured MgO film coated electrodes for glow discharge sustainment
DOI:10.1016/j.tsf.2013.02.006 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Akasaka, Hiroki;Matsuda, Kuniyuki;Minami, Ryohei;Kiyokawa, Toshio;Takano, Akihiro;Ohshio, Shigeo;Toda, Ikumi;Saitoh, Hidetoshi;
10:327:2:6 Fabrication and lithium electrochemistry of InSe thin film
DOI:10.1016/j.apsusc.2010.10.085 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Li, Wen-Jing;Zhou, Yong-Ning;Fu, Zheng-Wen;
10:327:3:1 Fabrication of Al/MgO/C and C/MgO/InSe/C tunneling barriers for tunable negative resistance and negative capacitance applications
DOI:10.1016/j.mseb.2013.03.021 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:8 AU: Qasrawi, A. F.;
10:327:3:2 Ge quantum dot tunneling diode with room temperature negative differential resistance
DOI:10.1063/1.3462069 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Oehme, M.;Karmous, A.;Sarlija, M.;Werner, J.;Kasper, E.;Schulze, J.;
10:327:3:3 Silicon interband tunneling diodes with high peak-to-valley ratios
DOI:10.1016/j.tsf.2011.10.098 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Oehme, M.;
10:327:3:4 Optical dynamics of MgO/Ga4Se3S interface
DOI:10.1016/j.jallcom.2013.08.026 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Qasrawi, A. F.;Abd-Alrazq, Mariam M.;Gasanly, N. M.;
10:327:3:5 Antimony doped Si Esaki diodes without post growth annealing
DOI:10.1016/j.tsf.2009.10.057 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Oehme, M.;Kirfel, O.;Werner, J.;Kaschel, M.;Kasper, E.;Schulze, J.;
10:327:4:1 Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures
DOI:10.1016/j.mssp.2011.08.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:11 AU: Gokcen, M.;Altuntas, H.;Altindal, S.;Ozcelik, S.;
10:327:4:2 Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation
DOI:10.1016/j.mssp.2014.01.041 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Bouiadjra, Wadi Bachir;Kadaoui, Mustapha Amine;Saidane, Abdelkader;Henini, Mohamed;Shafi, Muhammad;
10:327:4:3 Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys
DOI:10.1016/j.jcrysgro.2012.03.059 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:2 AU: Chen, X. Z.;Zhang, D. H.;Jin, Y. J.;Li, J. H.;Teng, J. H.;Yakovlev, N.;
10:328:1 Simple, Large-Scale Patterning of Hydrophobic ZnO Nanorod Arrays
DOI:10.1021/am3007142 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:14 AU: Kim, Seong Been;Lee, Won Woo;Yi, Jaeseok;Park, Won Il;Kim, Jin-Sang;Nichols, William T.;
10:328:2 Superhydrophobic surfaces using selected zinc oxide microrod growth on ink-jetted patterns
DOI:10.1016/j.jcis.2010.11.004 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:29 AU: Myint, Myo Tay Zar;Kitsomboonloha, Rungrot;Baruah, Sunandan;Dutta, Joydeep;
10:328:3 Synthesis of ZnO nanotubes and nanotube-nanorod hybrid hexagonal networks using a hexagonally close-packed colloidal monolayer template
DOI:10.1039/c0jm00011f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:14 AU: Pyun, Yong Bum;Yi, Jaeseok;Lee, Dong Hyun;Son, Kwang Soo;Liu, Guanchen;Yi, Dong Kee;Paik, Ungyu;Park, Won Il;
10:328:4 Electroless deposition of multi-functional zinc oxide surfaces displaying photoconductive, superhydrophobic, photowetting, and antibacterial properties
DOI:10.1039/c2jm14260k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:14 AU: Wood, T. J.;Hurst, G. A.;Schofield, W. C. E.;Thompson, R. L.;Oswald, G.;Evans, J. S. O.;Sharples, G. J.;Pearson, C.;Petty, M. C.;Badyal, J. P. S.;
10:328:5 Effects of the morphology of inkjet printed zinc oxide (ZnO) on thin film transistor performance and seeded ZnO nanorod growth
DOI:10.1016/j.tsf.2013.01.032 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Liang, Yen Nan;Lok, Boon Keng;Wang, Libo;Feng, Chengang;Lu, Albert Chee Wai;Mei, Ting;Hu, Xiao;
10:328:6 Large-Scale Synthesis of Vertically Aligned ZnO Hexagonal Nanotube-Rod Hybrids Using a Two-Step Growth Method
DOI:10.1111/jace.12507 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:1 AU: Kim, Seong Been;Kim, Sungwoong;Kwon, Sun Sang;Lee, Won Woo;Kim, Jin-Sang;Park, Won Il;
10:328:7 A novel method to prepare a microflower-like superhydrophobic epoxy resin surface
DOI:10.1016/j.matchemphys.2012.04.049 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Wang, Chunqi;Xiao, Jiayu;Zeng, Jingcheng;Jiang, Dazhi;Yuan, Zhiqing;
10:328:8 Facile fabrication of superhydrophobic flower-like polyaniline architectures by using valine as a dopant in polymerization
DOI:10.1016/j.apsusc.2011.12.077 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Sun, Jun;Bi, Hong;
10:328:9 Polymeric nanofiber composites with aligned ZnO nanorods
DOI:10.1016/j.compscitech.2013.06.017 JN:COMPOSITES SCIENCE AND TECHNOLOGY PY:2013
TC:2 AU: Nain, Ratyakshi;Jassal, Manjeet;Agrawal, Ashwini K.;
10:328:10 Piezoelectric inkjet printed films and patterns of ZnO and Mn doped ZnO: formation of bifunctional Zn0.98Mn0.02O films
DOI:10.1039/c1jm10836k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:2 AU: Jayakumar, O. D.;Tyagi, A. K.;
10:328:11 Bioinspired Morphogenesis of Highly Intricate and Symmetric Silica Nanostructures
DOI:10.1021/nl301568y JN:NANO LETTERS PY:2012
TC:8 AU: Yi, Jaeseok;Jang, Hee Su;Lee, Jin Seok;Park, Won Il;
10:328:12 ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability
DOI:10.1063/1.4803553 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Beaini, Sara S.;Kronawitter, Coleman X.;Carey, Van P.;Mao, Samuel S.;
10:329:1 Increased photocatalytic activity of tube-brush-like ZnO nanostructures fabricated by using PVP nanofibers as templates
DOI:10.1016/j.apsusc.2014.07.148 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Chen, Xinying;Zhai, Yingjiao;Li, Jinhua;Fang, Xuan;Fang, Fang;Chu, Xueying;Wei, Zhipeng;Wang, Xiaohua;
10:329:2 Electrospun graphene-ZnO nanofiber mats for photocatalysis applications
DOI:10.1016/j.apsusc.2013.12.159 JN:APPLIED SURFACE SCIENCE PY:2014
TC:10 AU: An, Seongpil;Joshi, Bhavana N.;Lee, Min Wook;Kim, Na Young;Yoon, Sam S.;
10:329:3 Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment
DOI:10.1088/0957-4484/22/37/375201 JN:NANOTECHNOLOGY PY:2011
TC:11 AU: Liao, Zhi-Min;Lu, Yi;Wu, Han-Chun;Bie, Ya-Qing;Zhou, Yang-Bo;Yu, Da-Peng;
10:329:4 Controllable synthesis and characterization of tube brush-like ZnO nanowires produced via a simple chemical vapor deposition method
DOI:10.1007/s00339-009-5478-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:15 AU: Bie, Ya-Qing;Liao, Zhi-Min;Xu, Hong-Jun;Zhang, Xin-Zheng;Shan, Xu-Dong;Yu, Da-Peng;
10:329:5 Improved optical properties of ZnO thin films by concurrently introduced interfacial voids during thermal annealing
DOI:10.1063/1.3609321 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Gueder, Firat;Yang, Yang;Danhof, Julia;Hartel, Andreas;Schwarz, Ulrich T.;Zacharias, Margit;
10:329:6 Electrohydrodynamic Direct-Write Orderly Micro/Nanofibrous Structure on Flexible Insulating Substrate
DOI:10.1155/2014/708186 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Zheng, Jiang-Yi;Liu, Hai-Yan;Wang, Xiang;Zhao, Yang;Huang, Wei-Wei;Zheng, Gao-Feng;Sun, Dao-Heng;
10:329:7 Nanostructures and Surface Nanomechanical Properties of Polyacrylonitrile/Graphene Oxide Composite Nanofibers by Electrospinning
DOI:10.1002/app.38273 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:9 AU: Wang, Qingqing;Du, Yuanzhi;Feng, Quan;Huang, Fenglin;Lu, Keyu;Liu, Jingyan;Wei, Qufu;
10:329:8 Preparation of cadmium-doped zinc oxide nanoflowers with enhanced photocatalytic activity
DOI:10.1016/j.mssp.2014.04.023 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Zhai, Y. J.;Li, J. H.;Fang, X.;Chen, X. Y.;Fang, F.;Chu, X. Y.;Wei, Z. P.;Wang, X. H.;
10:329:9 Controlled Positioning of Large Interfacial Nanocavities via Stress-Engineered Void Localization
DOI:10.1002/smll.201000561 JN:SMALL PY:2010
TC:14 AU: Gueder, Firat;Yang, Yang;Goetze, Silvana;Berger, Andreas;Ramgir, Niranjan;Hesse, Dietrich;Zacharias, Margit;
10:329:10 High-temperature gold metallization for ZnO nanowire device on a SiC substrate
DOI:10.1063/1.4729802 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Gurwitz, Ron;Tuboul, Guy;Shikler, Boaz;Shalish, Ilan;
10:329:11 Electrohydrodynamic direct-writing ZnO nanofibers for device applications
DOI:10.1016/j.matlet.2013.07.051 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Wang, Xiang;Zheng, Gaofeng;He, Guangqi;Wei, Jin;Liu, Haiyan;Lin, Yihong;Zheng, Jianyi;Sun, Daoheng;
10:330:1 Thickness study of Al:ZnO film for application as a window layer in Cu(In1-xGax)Se-2 thin film solar cell
DOI:10.1016/j.apsusc.2010.11.169 JN:APPLIED SURFACE SCIENCE PY:2011
TC:29 AU: Islam, M. M.;Ishizuka, S.;Yamada, A.;Matsubara, K.;Niki, S.;Sakurai, T.;Akimoto, K.;
10:330:2 Sol-gel synthesis of intrinsic and aluminum-doped zinc oxide thin films as transparent conducting oxides for thin film solar cells
DOI:10.1016/j.tsf.2012.10.079 JN:THIN SOLID FILMS PY:2013
TC:10 AU: Salam, Shahzad;Islam, Mohammad;Akram, Aftab;
10:330:3 First-principles study of fluorine-doped zinc oxide
DOI:10.1063/1.3492444 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Liu, Bo;Gu, Mu;Liu, Xiaolin;Huang, Shiming;Ni, Chen;
10:330:4 Polyol synthesis of Al-doped ZnO spherical nanoparticles and their UV-vis NIR absorption properties
DOI:10.1016/j.ceramint.2014.01.099 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Izu, Noriya;Shimada, Kazuhiko;Akamatsu, Takafumi;Itoh, Toshio;Shin, Woosuck;Shiraishi, Kentaro;Usui, Taketoshi;
10:330:5 Longitudinal optical phonon-plasmon coupled modes of degenerate Al-doped ZnO films
DOI:10.1063/1.4737647 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Ding, K.;Hu, Q. C.;Lin, W. W.;Huang, J. K.;Huang, F.;
10:330:6 Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing
DOI:10.1063/1.4903074 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Prucnal, S.;Gao, Kun;Zhou, Shengqiang;Wu, Jiada;Cai, Hua;Gordan, Ovidiu D.;Zahn, Dietrich R. T.;Larkin, G.;Helm, M.;Skorupa, W.;
10:330:7 Correlation between structure and photoluminescence of c-axis oriented nanocrystalline ZnO films and evolution of photo-generated excitons
DOI:10.1016/j.solmat.2011.09.033 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:5 AU: Gao, Kun;Li, Qian;Hu, Zhigao;Yu, Wenlei;Sun, Jian;Xu, Ning;Wu, Jiada;
10:330:8 Gas sensing enhancement of aluminum-doped ZnO nanovase structure with many gas facile diffusivity paths
DOI:10.1016/j.apsusc.2012.10.144 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Yu Lingmin;Fan Xinhui;Cao Lei;Qi Lijun;Yan Wen;
10:330:9 Study of the properties of undoped and fluorine doped zinc oxide nanoparticles
DOI:10.1016/j.matlet.2010.04.001 JN:MATERIALS LETTERS PY:2010
TC:14 AU: Gonzalez-Hernandez, R.;Martinez, Arturo I.;Falcony, C.;Lopez, A. A.;Pech-Canul, M. I.;Hdz-Garcia, H. M.;
10:330:10 Improved optical transmittance of Al-doped ZnO thin films by use of ZnO nanorods
DOI:10.1016/j.matchemphys.2011.07.034 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:8 AU: Lu, Wei-Lun;Hung, Pin-Kun;Hung, Chen-I;Yeh, Chih-Hung;Houng, Mau-Phon;
10:330:11 Electrolytic Synthesis of Al-Doped ZnO Nanopowders With Low Electrical Resistivity
DOI:10.1111/j.1551-2916.2010.04048.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:4 AU: Takaki, Takeshi;Kurosawa, Keiko;Razavi, Hadi;Sukenaga, Sohei;Saito, Noritaka;Kaneko, Kenji;Nakashima, Kunihiko;Hiraakiy, Taisei;
10:330:12 ZnO:Al/i-ZnO bi-layers deposited on large substrates by pulsed DC magnetron sputtering for chalcogenide photovoltaics
DOI:10.1016/j.ceramint.2014.06.044 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Mereu, R. A.;Marchionna, S.;Le Donne, A.;Ciontea, L.;Binetti, S.;Acciarri, M.;
10:331:1 On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts
DOI:10.1063/1.3517810 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:25 AU: Yildirim, Nezir;Ejderha, Kadir;Turut, Abdulmecit;
10:331:2 Electrical characterization of a-Si:H(n)/c-Si(p) structure
DOI:10.1016/j.jallcom.2011.07.044 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Kavasoglu, A. Sertap;Birgi, Ozcan;Kavasoglu, Nese;Oylumluoglu, Gorkem;Kodolbas, A. Osman;Kangi, Rifat;Yilmaz, Okan;
10:331:3 Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector
DOI:10.1016/j.jallcom.2013.07.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Bao, Xichang;Xu, Jintong;Li, Chao;Qiao, Hui;Zhang, Yan;Li, Xiangyang;
10:331:4 Analysis of current-voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
DOI:10.1016/j.mseb.2010.03.044 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:14 AU: Mtangi, W.;van Rensburg, P. J. Janse;Diale, M.;Auret, F. D.;Nyamhere, C.;Nel, J. M.;Chawanda, A.;
10:331:5 Analysis of multi-crystalline silicon solar cells at low illumination levels using a modified two-diode model
DOI:10.1016/j.solmat.2010.06.036 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:27 AU: Kassis, A.;Saad, M.;
10:331:6 Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
DOI:10.1016/j.tsf.2011.01.258 JN:THIN SOLID FILMS PY:2011
TC:18 AU: Reddy, M. Siva Pratap;Kumar, A. Ashok;Reddy, V. Rajagopal;
10:331:7 Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD
DOI:10.1016/j.jallcom.2010.06.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:4 AU: Suresh, S.;Balaji, M.;Ganesh, V.;Baskar, K.;
10:331:8 The analysis of the current-voltage characteristics of the high barrier Au/Anthracene/n-Si MIS devices at low temperatures
DOI:10.1016/j.matchemphys.2013.09.030 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Kacus, H.;Deniz, A. R.;Caldiran, Z.;Aydogan, S.;Yesildag, A.;Ekinci, D.;
10:331:9 Interface state effects in GaN Schottky diodes
DOI:10.1016/j.tsf.2012.08.029 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Ahaitouf, A.;Srour, H.;Hamady, S. Ould Saad;Fressengeas, N.;Ougazzaden, A.;Salvestrini, J. P.;
10:331:10 Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions
DOI:10.1063/1.4862471 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Kumar, Ashish;Kumar, Tanuj;Haehnel, A.;Kanjilal, D.;Singh, R.;
10:331:11 Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaN
DOI:10.1016/j.jallcom.2010.04.230 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Reddy, M. Siva Pratap;Reddy, V. Rajagopal;Choi, Chel-Jong;
10:331:12 Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study
DOI:10.1016/j.synthmet.2011.05.018 JN:SYNTHETIC METALS PY:2011
TC:2 AU: Kavasoglu, A. Sertap;Kavasoglu, Nese;Oylumluoglu, Gorkem;
10:331:13 Electrical and microstructural analyses of 200 MeV Ag14+ ion irradiated Ni/GaN Schottky barrier diode
DOI:10.1063/1.4758929 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Kumar, Ashish;Haehnel, A.;Kanjilal, D.;Singh, R.;
10:331:14 Electrical behaviour of lateral Al/n-GaN/Al structures
DOI:10.1016/j.apsusc.2010.03.031 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Horvath, Zs. J.;Dobos, L.;Beaumont, B.;Bougrioua, Z.;Pecza, B.;
10:331:15 Effect of annealing on Ni/GaN(0001) contact morphology
DOI:10.1016/j.apsusc.2014.01.023 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Grodzicki, M.;Mazur, P.;Zuber, S.;Pers, J.;Brona, J.;Ciszewski, A.;
10:331:16 Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
DOI:10.1016/j.jallcom.2009.11.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:2 AU: Zhao, D. G.;Jiang, D. S.;Zhu, J. J.;Wang, H.;Liu, Z. S.;Zhang, S. M.;Yang, Hui;
10:331:17 I-V characteristics of a-Si-c-Si hetero-junction diodes made by hot wire CVD
DOI:10.1016/j.solmat.2010.05.024 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:6 AU: Hernandez-Como, Norberto;Morales-Acevedo, Arturo;Matsumoto, Y.;
10:332:1 Effects of growth substrates on the morphologies of TiO2 nanowire arrays and the performance of assembled UV detectors
DOI:10.1016/j.apsusc.2014.07.115 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Liu, Guohua;Zhang, Min;Zhang, Dezhong;Gu, Xuehui;Meng, Fanxu;Wen, Shanpeng;Chen, Yu;Ruan, Shengping;
10:332:2 Plasma process for development of a bulk heterojunction optoelectronic device: A highly sensitive UV detector
DOI:10.1016/j.apsusc.2012.04.115 JN:APPLIED SURFACE SCIENCE PY:2012
TC:13 AU: Sharma, Shyamalima;Pal, Arup R.;Chutia, Joyanti;Bailung, Heremba;Sarma, Neelotpal S.;Dass, Narendra N.;Patil, Dinkar;
10:332:3 Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films
DOI:10.1063/1.3537918 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:14 AU: Xie, Yannan;Huang, Huolin;Yang, Weifeng;Wu, Zhengyun;
10:332:4 Highly efficient ultraviolet photodetectors based on TiO2 nanocrystal-polymer composites via wet processing
DOI:10.1088/0957-4484/21/18/185708 JN:NANOTECHNOLOGY PY:2010
TC:19 AU: Han, Yangang;Wu, Gang;Li, Haiguo;Wang, Mang;Chen, Hongzheng;
10:332:5 Near ultraviolet photodetector fabricated from polyvinyl-alcohol coated In2O3 nanoparticles
DOI:10.1016/j.apsusc.2012.07.111 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Shao, Dali;Qin, Liqiao;Sawyer, Shayla;
10:332:6 Pulsed DC discharge for synthesis of conjugated plasma polymerized aniline thin film
DOI:10.1016/j.apsusc.2012.07.099 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Barman, Tapan;Pal, Arup R.;
10:332:7 Photoelectron Properties of Nanocrystalline TiO2 Films Prepared by a Powerful Hydrothermal Technique
DOI:10.1111/j.1551-2916.2012.05131.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:4 AU: Feng, Caihui;Zhang, Haifeng;Wang, Yu;Li, Wei;Zhou, Jingran;Chen, Lihua;Yu, Lianxiang;Ruan, Shengping;
10:332:8 Tunable photoluminescence properties of well-aligned ZnO nanorod array by oxygen plasma post-treatment
DOI:10.1016/j.apsusc.2013.10.146 JN:APPLIED SURFACE SCIENCE PY:2014
TC:9 AU: Jiang, Shan;Ren, Zhaohui;Gong, Siyu;Yin, Simin;Yu, Yifeng;Li, Xiang;Xu, Gang;Shen, Ge;Han, Gaorong;
10:332:9 Comparative study of structural, and optical properties of pulsed and RF plasma polymerized aniline films
DOI:10.1016/j.apsusc.2014.05.205 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Barman, Tapan;Pal, Arup R.;Chutia, Joyanti;
10:332:10 Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications
DOI:10.1016/j.matchemphys.2014.07.035 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Hussain, Amreen A.;Pal, Arup R.;Kar, Rajib;Bailung, Heremba;Chutia, Joyanti;Patil, Dinkar S.;
10:332:11 High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 film
DOI:10.1016/j.apsusc.2012.12.084 JN:APPLIED SURFACE SCIENCE PY:2013
TC:11 AU: Zhang, Min;Gu, Xuehui;Lv, Kaibo;Dong, Wei;Ruan, Shengping;Chen, Yu;Zhang, Haifeng;
10:333:1 Insight into the Aging Effect on Enhancement of Hydrogen-Sensing Characteristics of a Zirconia-Based Sensor Utilizing a Zn-Ta-O-Based Sensing Electrode
DOI:10.1021/am403952w JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:4 AU: Anggraini, Sri Ayu;Breedon, Michael;Ikeda, Hiroshi;Miura, Norio;
10:333:2 Doping of Co into V2O5 nanoparticles enhances of methylene blue
DOI:10.1016/j.jallcom.2014.02.041 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Suresh, R.;Giribabu, K.;Manigandan, R.;Munusamy, S.;Kumar, S. Praveen;Muthamizh, S.;Stephen, A.;Narayanan, V.;
10:333:3 Synthesis burger/donut like V and W doped ZnO and study of their optical and gas sensing properties
DOI:10.1016/j.ceramint.2014.04.050 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Adhyapak, Parag V.;Meshram, Satish P.;Pawar, Aarti A.;Amalnerkar, Dinesh P.;Mulik, Uttam P.;Mulla, Imtiaz S.;
10:333:4 Temperature-dependent growth mode of W-doped ZnO nanostructures
DOI:10.1016/j.apsusc.2011.02.043 JN:APPLIED SURFACE SCIENCE PY:2011
TC:11 AU: Ngom, B. D.;Chaker, M.;Manyala, N.;Lo, B.;Maaza, M.;Beye, A. C.;
10:333:5 Structural, compositional and magnetic characterization of bulk V2O5 doped ZnO system
DOI:10.1016/j.apsusc.2009.09.039 JN:APPLIED SURFACE SCIENCE PY:2010
TC:19 AU: Karamat, S.;Rawat, R. S.;Lee, P.;Tan, T. L.;Ramanujan, R. V.;Zhou, W.;
10:333:6 The formation of anomalous Hall effect depending on W atoms in ZnO thin films
DOI:10.1016/j.apsusc.2014.02.079 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Can, Musa Mutlu;Shah, S. Ismat;Firat, Tezer;
10:333:7 Magnetoelectrical properties of W doped ZnO thin films
DOI:10.1016/j.jmmm.2012.07.014 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Can, Musa M.;Firat, Tezer;Shah, S. Ismat;
10:333:8 The shift of optical band gap in W-doped ZnO with oxygen pressure and doping level
DOI:10.1016/j.materresbull.2014.03.005 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Chu, J.;Peng, X. Y.;Dasari, K.;Palai, R.;Peng, P.;
10:333:9 Properties of metal-insulator transition and electron spin relaxation in GaN:Si
DOI:10.1103/PhysRevB.83.165206 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Wolos, A.;
10:333:10 Effect of yttria-stabilized zirconia sintering temperature on mixed potential sensor performance
DOI:10.1016/j.ssi.2010.05.029 JN:SOLID STATE IONICS PY:2010
TC:10 AU: Sekhar, Praveen K.;Brosha, Eric L.;Mukundan, Rangachary;Nelson, Mark A.;Toracco, Dennis;Garzon, Fernando H.;
10:333:11 Stabilized zirconia-based sensor utilizing SnO2-based sensing electrode with an integrated Cr2O3 catalyst layer for sensitive and selective detection of hydrogen
DOI:10.1016/j.ijhydene.2012.10.049 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:9 AU: Yamaguchi, Mami;Anggraini, Sri Ayu;Fujio, Yuki;Sato, Tomoaki;Breedon, Michael;Miura, Norio;
10:334:1 Morphology control of ZnO bilayer structure by low-temperature hydrothermal process
DOI:10.1016/j.matlet.2013.05.072 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Lou, Yanyan;Yuan, Shuai;Zhao, Yin;Hu, Pengfei;Wang, Zhuyi;Zhang, Meihong;Shi, Liyi;
10:334:2 Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property
DOI:10.1016/j.apsusc.2011.12.090 JN:APPLIED SURFACE SCIENCE PY:2012
TC:21 AU: Tian, Yu;Li, Jinchai;Xiong, Hui;Dai, Jiangnan;
10:334:3 Tip-growth mode and base-growth mode of Au-catalyzed zinc oxide nanowires using chemical vapor deposition technique
DOI:10.1016/j.jcrysgro.2010.03.035 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:20 AU: Pung, Swee-Yong;Choy, Kwang-Leong;Hou, Xianghui;
10:334:4 Standing porous ZnO nanoplate-built hollow microspheres and kinetically controlled dissolution/crystal growth mechanism
DOI:10.1557/jmr.2012.15 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:7 AU: Wang, Xianbiao;Cai, Weiping;Wang, Guozhong;Liang, Changhao;
10:334:5 Influence of Drying Temperature on the Structural, Optical, and Electrical Properties of Layer-by-Layer ZnO Nanoparticles Seeded Catalyst
DOI:10.1155/2012/359103 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Shariffudin, S. S.;Mamat, M. H.;Herman, S. H.;Rusop, M.;
10:334:6 In situ application of polyelectrolytes in zinc oxide nanorod synthesis: Understanding the effects on the structural and optical characteristics
DOI:10.1016/j.jcis.2012.11.027 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:1 AU: Suresh, Vignesh;Jayaraman, Sundaramurthy;Jailani, Muhammad Iskhandar bin Muhamad;Srinivasan, M. P.;
10:334:7 Synthesis of pencil-shaped ZnO nanowires using sunlight
DOI:10.1016/j.matlet.2011.12.120 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Lee, Geun-Hyoung;
10:334:8 Surfactant-assisted synthesis of the pencil-like zinc oxide and its sensing properties
DOI:10.1016/j.matlet.2013.06.014 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Du, Jianping;Wang, Heyan;Zhao, Ruihua;Xie, Yajuan;Yao, Huanli;
10:334:9 Twinned tabour-like ZnO: Surfactant-, template-free synthesis and gas sensing behaviors
DOI:10.1016/j.apsusc.2011.01.102 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Zhang, Yanyan;Fu, Wuyou;Sui, Yongming;Yang, Haibin;Cao, Jing;Li, Minghui;Li, Yixing;Zhou, Xiaoming;Leng, Yan;Zhao, Wenyan;Chen, Hui;Zhang, Lina;Jing, Qiang;Zhao, Hui;
10:334:10 Fabrication of highly oriented (002) ZnO film on glass by sol-gel method
DOI:10.1016/j.tsf.2010.09.006 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Ho, Yung-Shou;Lee, Kuan-Yi;
10:334:11 Preparation of large diameter and low density ZnS microtube arrays via a sacrificial template method
DOI:10.1016/j.matlet.2013.10.029 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Miao, Chengcheng;Yang, Guangwu;Bu, Zhongheng;Lu, Xiaoqing;Zhao, Lianming;Guo, Wenyue;Xue, Qingzhong;
10:334:12 Hydrothermal growth of low-density ZnO microrod arrays on nonseeded FTO substrates
DOI:10.1016/j.matlet.2012.09.025 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Yang, Guangwu;Wang, Baoli;Guo, Wenyue;Wang, Qing;Liu, Yanmin;Miao, Chengcheng;Bu, Zhongheng;
10:335:1 Development of textured back reflector for n-i-p flexible silicon thin film solar cells
DOI:10.1016/j.solmat.2009.11.001 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:15 AU: Tao, Ke;Zhang, Dexian;Wang, Linshen;Zhao, Jingfang;Cai, Hongkun;Sui, Yanping;Qiao, Zaixiang;He, Qing;Zhang, Yi;Sun, Yun;
10:335:2 Plasma-induced TCO texture of ZnO:Ga back contacts on silicon thin film solar cells
DOI:10.1016/j.solmat.2010.10.010 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:16 AU: Lai, Kuang-Chieh;Wang, Jen-Hung;Lu, Chun-hsiung;Tsai, Fu-Ji;Yeh, Chih-Hung;Houng, Mau-Phon;
10:335:3 CO2 gas sensing properties of DC reactive magnetron sputtered ZnO thin film
DOI:10.1016/j.ceramint.2014.05.011 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Kannan, Padmanathan Karthick;Saraswathi, Ramiah;Rayappan, John Bosco Balaguru;
10:335:4 Natively textured surface Al-doped ZnO-TCO layers with gradual oxygen growth for thin film solar cells via magnetron sputtering
DOI:10.1016/j.apsusc.2011.12.061 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Chen, Xin-liang;Wang, Fei;Geng, Xin-hua;Zhang, De-kun;Wei, Chang-chun;Zhang, Xiao-dan;Zhao, Ying;
10:335:5 New natively textured surface Al-doped ZnO-TCOs for thin film solar cells via magnetron sputtering
DOI:10.1016/j.materresbull.2012.04.009 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:3 AU: Chen, Xin-liang;Wang, Fei;Geng, Xin-hua;Zhang, De-kun;Wei, Chang-chun;Zhang, Xiao-dan;Zhao, Ying;
10:335:6 As-grown textured zinc oxide films by ion beam treatment and magnetron sputtering
DOI:10.1016/j.tsf.2011.04.098 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Zhang, Wendi;Bunte, Eerke;Ruske, Florian;Koehl, Dominik;Besmehn, Astrid;Worbs, Janine;Siekmann, Hilde;Kirchhoff, Joachim;Gordijn, Aad;Huepkes, Juergen;
10:335:7 Natively textured surface aluminum-doped zinc oxide transparent conductive layers for thin film solar cells via pulsed direct-current reactive magnetron sputtering
DOI:10.1016/j.tsf.2012.03.120 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Chen, Xin-liang;Li, Lin-na;Wang, Fei;Ni, Jian;Geng, Xin-hua;Zhang, Xiao-dan;Zhao, Ying;
10:335:8 CdO-based nanostructures as novel CO2 gas sensors
DOI:10.1088/0957-4484/22/32/325501 JN:NANOTECHNOLOGY PY:2011
TC:11 AU: Krishnakumar, T.;Jayaprakash, R.;Prakash, T.;Sathyaraj, D.;Donato, N.;Licoccia, S.;Latino, M.;Stassi, A.;Neri, G.;
10:335:9 Investigation of CdO nanostructures synthesized by microwave assisted irradiation technique for NO2 gas detection
DOI:10.1016/j.jallcom.2014.04.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Rajesh, N.;Kannan, J. C.;Leonardi, S. G.;Neri, G.;Krishnakumar, T.;
10:335:10 A study of the i/p interface for flexible n-i-p a-Si:H thin film solar cells
DOI:10.1016/j.mssp.2013.11.024 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Wang, Jin;Tao, Ke;Cai, Hongkun;Zhang, Dexian;Li, Guofeng;
10:335:11 High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells
DOI:10.1016/j.solmat.2013.11.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:6 AU: Meng, Fanying;Shi, Jianhua;Liu, Zhengxin;Cui, Yanfeng;Lu, Zhongdan;Feng, Zhiqiang;
10:335:12 Preparation and characterization of chemically synthesized polyaniline-polystyrene blends as a carbon dioxide gas sensor
DOI:10.1016/j.synthmet.2013.07.026 JN:SYNTHETIC METALS PY:2013
TC:3 AU: Bhadra, J.;Al-Thani, N. J.;Madi, N. K.;Al-Maadeed, Mariam A.;
10:335:13 Flexible n-i-p thin filmsilicon solar cells on polyimide foils with textured ZnO:Ga back reflector
DOI:10.1016/j.tsf.2014.09.026 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Marins, E.;Warzecha, M.;Micharda, S.;Hotovy, J.;Boettler, W.;Alpuim, P.;Finger, F.;
10:336:1 Facile synthesis, characterization, and evaluation of neurotoxicity effect of cerium oxide nanoparticles
DOI:10.1016/j.ceramint.2013.02.026 JN:CERAMICS INTERNATIONAL PY:2013
TC:16 AU: Darroudi, Majid;Hakimi, Mohammad;Sarani, Mina;Oskuee, Reza Kazemi;Zak, Ali Khorsand;Gholami, Leila;
10:336:2 Superparamagnetic iron oxide nanoparticles (SPIONs): Green preparation, characterization and their cytotoxicity effects
DOI:10.1016/j.ceramint.2014.06.051 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Darroudi, Majid;Hakimi, Mohammad;Goodarzi, Elham;Oskuee, Reza Kazemi;
10:336:3 Synthesis of nanocrystalline cerium oxide by high energy ball milling
DOI:10.1016/j.ceramint.2012.04.025 JN:CERAMICS INTERNATIONAL PY:2012
TC:12 AU: Yadav, T. P.;Srivastava, O. N.;
10:336:4 Synthesis of crystalline cerium dioxide hydrosol by a sol-gel method
DOI:10.1016/j.ceramint.2011.05.063 JN:CERAMICS INTERNATIONAL PY:2012
TC:11 AU: He, Hong-Wei;Wu, Xiao-Qing;Ren, Wei;Shi, Peng;Yao, Xi;Song, Zhi-Tang;
10:336:5 Green synthesis and evaluation of metabolic activity of starch mediated nanoceria
DOI:10.1016/j.ceramint.2013.07.116 JN:CERAMICS INTERNATIONAL PY:2014
TC:9 AU: Darroudi, Majid;Sarani, Mina;Oskuee, Reza Kazemi;Zake, Ali Khorsand;Hosseini, Hasan Ali;Gholami, Leila;
10:336:6 Food-directed synthesis of cerium oxide nanoparticles and their neurotoxicity effects
DOI:10.1016/j.ceramint.2013.12.089 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Darroudi, Majid;Hoseini, Seyed Javad;Oskuee, Reza Kazemi;Hosseini, Hasan Ali;Gholami, Leila;Gerayli, Sina;
10:336:7 Nanoceria: Gum mediated synthesis and in vitro viability assay
DOI:10.1016/j.ceramint.2013.10.026 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Darroudi, Majid;Sarani, Mina;Oskuee, Reza Kazemi;Zak, Ali Khorsand;Amiri, Mohammad Sadegh;
10:336:8 The preparation of ceria colloids dispersed by polyvinyl alcohol
DOI:10.1016/j.ceramint.2012.10.147 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: He, Hong-wei;Wu, Xiao-qing;Ren, Wei;Shi, Peng;Song, Zhi-tang;
10:336:9 Effect of Ba2+Addition on Phase Separation and Oxygen Storage Capacity of Ce0.5Zr0.5O2 Powder
DOI:10.1111/j.1551-2916.2010.04159.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:5 AU: Chuang, Chia-Che;Chen, Ming-Jay;Hsiang, Hsing-I;Yen, Fu-Su;Chen, Chih-Cheng;
10:337:1 Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots
DOI:10.1103/PhysRevB.81.035336 JN:PHYSICAL REVIEW B PY:2010
TC:40 AU: Nistor, S. V.;Stefan, M.;Nistor, L. C.;Goovaerts, E.;Van Tendeloo, G.;
10:337:2 Evaluation of the Segregation of Paramagnetic Impurities at Grain Boundaries in Nanostructured ZnO Films
DOI:10.1021/am5035329 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Ghica, Daniela;Stefan, Mariana;Ghica, Corneliu;Stan, George E.;
10:337:3 Substitutional and surface Mn2+ centers in cubic ZnS:Mn nanocrystals. A correlated EPR and photoluminescence study
DOI:10.1103/PhysRevB.83.045301 JN:PHYSICAL REVIEW B PY:2011
TC:17 AU: Stefan, M.;Nistor, S. V.;Ghica, D.;Mateescu, C. D.;Nikl, M.;Kucerkova, R.;
10:337:4 Magnetic defects in crystalline Zn(OH)(2) and nanocrystalline ZnO resulting from its thermal decomposition
DOI:10.1016/j.jallcom.2012.09.016 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Nistor, S. V.;Ghica, D.;Stefan, M.;Vlaicu, I.;Barascu, J. N.;Bartha, C.;
10:337:5 Structural phase transformations in annealed cubic ZnS nanocrystals
DOI:10.1007/s11051-011-0379-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:10 AU: Ghica, D.;Nistor, S. V.;Nistor, L. C.;Stefan, M.;Mateescu, C. D.;
10:337:6 Effect of impurity strength and impurity domain on excitation of doped quantum dot induced by discontinuously reversing pulsed field
DOI:10.1063/1.3510478 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:8 AU: Datta, Nirmal Kumar;Ghosh, Subhasree;Ghosh, Manas;
10:337:7 Influence of impurity propagation and concomitant enhancement of impurity spread on excitation profile of doped quantum dots
DOI:10.1063/1.4732137 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Datta, Nirmal Kr;Pal, Suvajit;Ghosh, Manas;
10:337:8 Effect of Indium Segregation on the Surface versus Bulk Chemistry for Indium-Doped TiO2
DOI:10.1021/am301729z JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:13 AU: Atanacio, Armand J.;Bak, Tadeusz;Nowotny, Janusz;
10:337:9 Excitations in doped quantum dot induced by accelerating impurity center
DOI:10.1063/1.3624664 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Datta, Nirmal Kr;Ghosh, Manas;
10:337:10 Excitations in doped quantum dot driven by periodically fluctuating impurity domain
DOI:10.1063/1.3581091 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Chatterjee, Kashinath;Datta, Nirmal Kr;Ghosh, Manas;
10:337:11 Photoinduced absorption study of carrier dynamics in Ru-doped Bi12SiO20 crystals after nanosecond laser pulse excitation
DOI:10.1063/1.3418443 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Marinova, V.;Ahmad, I.;Goovaerts, E.;
10:337:12 Impurity modulated excitation profile of doped quantum dot subject to oscillatory magnetic field
DOI:10.1016/j.matchemphys.2010.12.059 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:2 AU: Datta, Nirmal Kumar;Ghosh, Manas;
10:337:13 Phase-modulated ellipsometry for probing the temperature-induced phase transition in ruthenium-doped lead zinc niobate-lead titanate single crystal
DOI:10.1016/j.tsf.2010.12.085 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Chuang, Chun-I;Marinova, Vera;Lin, Shiuan-Huei;Chao, Yu-Faye;
10:338:1 Comparison of ethanol sensitivity based on cobalt-indium combined oxide nanotubes and nanofibers
DOI:10.1016/j.jallcom.2014.07.112 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Liu, Changbai;Chi, Xiao;Liu, Xingyi;Wang, Shenglei;
10:338:2 Enhanced formaldehyde-sensing properties of mixed Fe2O3-In2O3 nanotubes
DOI:10.1016/j.mssp.2013.11.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:6 AU: Chi, Xiao;Liu, Changbai;Liu, Li;Li, Shouchun;Li, Haiying;Zhang, Xiaobo;Bo, Xiaoqing;Shan, Hao;
10:338:3 Oxygen sensing performance of Nb-doped TiO2 thin film with porous structure
DOI:10.1016/j.jallcom.2013.09.161 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Gan, Linhui;Wu, Congcong;Tan, Yuan;Chi, Bo;Pu, Jian;Jian, Li;
10:338:4 Synthesis and H-2 sensing properties of aligned ZnO nanotubes
DOI:10.1016/j.apsusc.2010.09.085 JN:APPLIED SURFACE SCIENCE PY:2011
TC:22 AU: Liu, Yanxia;Gao, Caitian;Pan, Xiaojun;An, Xiuyun;Xie, Yizhu;Zhou, Ming;Song, Jie;Zhang, Hongliang;Liu, Zhaoyu;Zhao, Qin;Zhang, Yonghai;Xie, Erqing;
10:338:5 Synthesis and ethanol sensing properties of CuO nanorods coated with In2O3
DOI:10.1016/j.ceramint.2012.12.026 JN:CERAMICS INTERNATIONAL PY:2013
TC:8 AU: Park, Sunghoon;Ko, Hyunsung;An, Soyeon;Lee, Wan In;Lee, Sangmin;Lee, Chongmu;
10:338:6 Detection of explosive markers using zeolite modified gas sensors
DOI:10.1039/c2ta01027e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:8 AU: Peveler, William J.;Binions, Russell;Hailes, Stephen M. V.;Parkin, Ivan P.;
10:338:7 Functionalized Ga2O3 Nanowires as Active Material in Room Temperature Capacitance-Based Gas Sensors
DOI:10.1021/la101760k JN:LANGMUIR PY:2010
TC:15 AU: Mazeina, Lena;Perkins, F. Keith;Bermudez, Victor M.;Arnold, Stephen P.;Prokes, S. M.;
10:338:8 In situ diffuse reflectance infrared Fourier transform spectroscopy study of formaldehyde adsorption and reactions on nano gamma-Fe2O3 films
DOI:10.1016/j.apsusc.2013.01.038 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Huang, Kaijin;Kong, Lingcong;Yuan, Fangli;Xie, Changsheng;
10:338:9 Assessing the potential of metal oxide semiconducting gas sensors for illicit drug detection markers
DOI:10.1039/c4ta00357h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:8 AU: Hernandez, P. Tarttelin;Naik, A. J. T.;Newton, E. J.;Hailes, Stephen M. V.;Parkin, I. P.;
10:338:10 Highly sensitive detection of explosive triacetone triperoxide by an In2O3 sensor
DOI:10.1088/0957-4484/21/31/315502 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Zhang, Wen-Hui;Zhang, Wei-De;Chen, Lu-Ya;
10:338:11 Surface modification of bone char for removal of formaldehyde from air
DOI:10.1016/j.apsusc.2013.09.053 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Rezaee, Abbas;Rangkooy, Hosseinali;Jonidi-Jafari, Ahmad;Khavanin, Ali;
10:339:1 Synthesis and characterization of hierarchical ZnS architectures based nanoparticles in the presence of thioglycolic acid
DOI:10.1016/j.ceramint.2012.10.001 JN:CERAMICS INTERNATIONAL PY:2013
TC:24 AU: Mohammadikish, Maryam;Davar, Fatemeh;Loghman-Estarki, Mohammad Reza;Hamidi, Zohreh;
10:339:2 Preparation and Periodic Emission of Superlattice CdS/CdS:SnS2 Microwires
DOI:10.1021/ja1037963 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:12 AU: Dai, Guozhang;Zou, Bingsuo;Wang, Zhonglin;
10:339:3 Synthesis and characterization of cauliflower-like ZnS microspheres by simple self-assembly method
DOI:10.1016/j.matlet.2014.01.012 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Park, Ju-Young;Park, Seo-Jin;Lee, Ju-Heon;Hwang, Cheol-Ho;Hwang, Kyung-Jun;Jin, Sungho;Choi, Do-Young;Yoon, Soon-Do;Lee, In-Hwa;
10:339:4 Synthesis of micro-and nanosized PbS with different morphologies by the hydrothermal process
DOI:10.1016/j.ceramint.2014.01.009 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Davar, Fatemeh;Mohammadikish, Maryam;Loghman-Estarki, Mohammad Reza;Masteri-Farahani, Majid;
10:339:5 Spectral characteristics and morphology of nanostructured Pb-S-O thin films synthesized via two different methods
DOI:10.1016/j.mssp.2014.08.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Mohamed, H. S. H.;Abdel-Hafiez, M.;Miroshnikov, B. N.;Barinov, A. D.;Miroshnikova, I. N.;
10:339:6 Supercrystal structures of polyhedral PbS nanocrystals
DOI:10.1016/j.jcis.2011.04.042 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:8 AU: Zhao, Zhihui;Zhang, Junhu;Dong, Fengxia;Yang, Bai;
10:339:7 Synthesis and characterization of zinc sulfide nanobelts with periodically modulated thickness
DOI:10.1016/j.matlet.2014.06.102 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Wang, Xiaoxu;Li, Jing;Zhang, Wensheng;Guo, Shuai;Zhang, Yongyou;Zou, Bingsuo;Liu, Ruibin;
10:339:8 Morphology-controlling synthesis of ZnS through a hydrothermal/solvthermal method
DOI:10.1016/j.ceramint.2011.10.013 JN:CERAMICS INTERNATIONAL PY:2012
TC:14 AU: Wang, Ling;Dai, Jinhui;Liu, Xizhong;Zhu, Zhibin;Huang, Xiang;Wu, Pingwei;
10:339:9 A study on the precursor of vanadium pentoxide by the hydrothermal method
DOI:10.1016/j.ceramint.2013.06.004 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Wang, Jinxing;Yu, Weijie;Xu, Shun;Dai, Songyan;Wang, Jiadong;Wang, Chenxi;Zeng, Wen;Cao, Peishan;
10:339:10 Thickness dependent physical properties of chemically deposited nanocrystalline MgSe thin films deposited at room temperature by solution growth method
DOI:10.1016/j.mssp.2013.06.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Ubale, Ashok U.;Sakhare, Yogesh S.;
10:339:11 Comparison of EDTA and SDS as potential surface impregnation agents for lead adsorption by activated carbon
DOI:10.1016/j.apsusc.2014.04.152 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Chen, Wei-fang;Pan, Ling;Chen, Li-fang;Yu, Zhe;Wang, Qiong;Yan, Chang-cheng;
10:340:1 Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile
DOI:10.1063/1.3673287 JN:APPLIED PHYSICS LETTERS PY:2011
TC:15 AU: Fan, Jiandong;Gueell, Frank;Fabrega, Cristian;Shavel, Alexey;Carrete, Alex;Andreu, Teresa;Ramon Morante, Joan;Cabot, Andreu;
10:340:2 Synthesis and luminescence properties of electrodeposited ZnO films
DOI:10.1063/1.3622627 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:23 AU: Manzano, C. V.;Alegre, D.;Caballero-Calero, O.;Alen, B.;Martin-Gonzalez, M. S.;
10:340:3 Thickness effect on the evolution of morphology and optical properties of ZnO films
DOI:10.1016/j.apsusc.2010.11.173 JN:APPLIED SURFACE SCIENCE PY:2011
TC:15 AU: Zhong, Aihua;Tan, Jin;Huang, Huali;Chen, Shengchang;Wang, Man;Xu, Sai;
10:340:4 Effect of Al doping on the structural, optical and photoluminescence properties of ZnS nanoparticles
DOI:10.1016/j.jallcom.2013.08.051 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Reddy, D. Amaranatha;Liu, Chunli;Vijayalakshmi, R. P.;Reddy, B. K.;
10:340:5 Effect of compressive stress on stability of N-doped p-type ZnO
DOI:10.1063/1.3631677 JN:APPLIED PHYSICS LETTERS PY:2011
TC:14 AU: Chen, Xingyou;Zhang, Zhenzhong;Yao, Bin;Jiang, Mingming;Wang, Shuangpeng;Li, Binghui;Shan, Chongxin;Liu, Lei;Zhao, Dongxu;Shen, Dezhen;
10:340:6 Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111) Si Substrate: The Effect of Film Thickness
DOI:10.1155/2014/861234 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Yu, Cheng-Chang;Lan, Wen-How;Huang, Kai-Feng;
10:340:7 Enhanced ultraviolet lasing from europium-doped zinc oxide nanocrystals
DOI:10.1016/j.optmat.2010.02.032 JN:OPTICAL MATERIALS PY:2010
TC:15 AU: Luo, L.;Gong, L.;Liu, Y. F.;Chen, J.;Ding, C. R.;Tang, X. G.;Li, X. L.;Qiu, Z. R.;Wang, H. Z.;Chen, X. M.;Li, K. F.;Fan, H. H.;Cheah, K. W.;
10:340:8 Attracting shallow donors: Hydrogen passivation in (Al,Ga,In)-doped ZnO
DOI:10.1103/PhysRevB.86.165207 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Matsubara, M.;Amini, M. N.;Saniz, R.;Lamoen, D.;Partoens, B.;
10:340:9 Microstructural and photoluminescence properties of sol-gel derived Tb3+ doped ZnO nanocrystals
DOI:10.1016/j.jallcom.2013.12.075 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Kabongo, Guy L.;Mhlongo, Gugu H.;Malwela, Thomas;Mothudi, Bakang M.;Hillie, Kenneth T.;Dhlamini, Mokhotjwa S.;
10:340:10 Microstructure, interdiffusion and magnetic properties of ZnO/MnOx multilayers grown by pulse laser deposition
DOI:10.1016/j.tsf.2009.12.042 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Martin-Gonzalez, M. S.;Steplecaru, C. S.;Briones, F.;Lopez-Ponce, E.;Fernandez, J. F.;Garcia, M. A.;Quesada, A.;Ballesteros, C.;Costa-Kraemer, J. L.;
10:341:1 Doping by diffusion of dopants from the substrate: synthesis of doped ZnO nanowires
DOI:10.1039/c2tc00438k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:3 AU: Sugavaneshwar, R. P.;Goswami, Gopal Krishna;Nanda, Karuna Kar;
10:341:2 Roles of carbon in light emission of ZnO
DOI:10.1063/1.3340934 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Lu, Y. H.;Hong, Z. X.;Feng, Y. P.;Russo, S. P.;
10:341:3 Highly efficient green light harvesting from Mg doped ZnO nanoparticles: Structural and optical studies
DOI:10.1016/j.jallcom.2012.10.084 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Sharma, Sarla;Vyas, Rishi;Sharma, Neha;Singh, Vidyadhar;Singh, Arvind;Kataria, Vanjula;Gupta, Bipin Kumar;Vijay, K.;
10:341:4 Vertically aligned ZnO/amorphous-Si core-shell heterostructured nanowire arrays
DOI:10.1088/0957-4484/21/47/475703 JN:NANOTECHNOLOGY PY:2010
TC:18 AU: Cheng, Chun;Wang, Tai-Lun;Feng, Lin;Li, Wei;Ho, Kin Ming;Loy, Michael M. T.;Fung, Kwok Kwong;Wang, Ning;
10:341:5 Carbon nanotube-ZnO nanowire hybrid architectures as multifunctional devices
DOI:10.1063/1.4817837 JN:AIP ADVANCES PY:2013
TC:3 AU: Singh, L. T.;Sugavaneshwar, R. P.;Nanda, K. K.;
10:341:6 Highly efficient luminescence from hybrid structures of ZnO/multi-walled carbon nanotubes for high performance display applications
DOI:10.1088/0957-4484/21/47/475701 JN:NANOTECHNOLOGY PY:2010
TC:12 AU: Gupta, Bipin Kumar;Grover, Vaneet;Gupta, Govind;Shanker, V.;
10:341:7 A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions
DOI:10.1063/1.4811091 JN:AIP ADVANCES PY:2013
TC:0 AU: Deka, Angshuman;Nanda, Karuna Kar;
10:341:8 Green emission in carbon doped ZnO films
DOI:10.1063/1.4882172 JN:AIP ADVANCES PY:2014
TC:2 AU: Tseng, L. T.;Yi, J. B.;Zhang, X. Y.;Xing, G. Z.;Fan, H. M.;Herng, T. S.;Luo, X.;Ionescu, M.;Ding, J.;Li, S.;
10:341:9 ZnO nanostructures grown on vertically aligned carbon nanotubes by laser-assisted flow deposition
DOI:10.1016/j.actamat.2012.06.005 JN:ACTA MATERIALIA PY:2012
TC:10 AU: Rodrigues, J.;Mata, D.;Fernandes, A. J. S.;Neto, M. A.;Silva, R. F.;Monteiro, T.;Costa, F. M.;
10:341:10 Carbon-assisted nucleation and vertical growth of high-quality ZnO nanowire arrays
DOI:10.1063/1.3613643 JN:AIP ADVANCES PY:2011
TC:3 AU: Cheng, Chun;Wong, Tai Lun;Li, Wei;Zhu, Chao;Xu, Shuigang;Wang, Lin;Fung, Kwok Kwong;Wang, Ning;
10:341:11 First-principles study of structural, electronic and optical properties of Zn1-xMgxO ternary alloys using modified Becke-Johnson potential
DOI:10.1016/j.mssp.2013.10.031 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Rashid, Muhammad;Hussain, Fayyaz;Imran, Muhammad;Abo, Gavin S.;Ahmad, S. A.;Feng, Yuan Ping;
10:341:12 Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells
DOI:10.1155/2012/192456 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Murphy, John W.;Mejia, Israel;Gnade, Bruce E.;Quevedo-Lopez, Manuel A.;
10:341:13 Crack free ZnO thick film on sapphire substrate without GaN template grown by MVPE
DOI:10.1016/j.mssp.2012.02.013 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:2 AU: Wang, X. F.;Duan, Y.;Cui, J. P.;Zeng, Y. P.;
10:342:1 Single Step Growth and Characterization of Zinc Oxide, Tin Oxide, and Composite (ZnxSn1-xOy) Nanoplate and Nanocolumn Electrodes
DOI:10.1111/j.1551-2916.2011.04525.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:10 AU: Dharmadasa, Ruvini;Tahir, Asif A.;Wijayantha, K. G. Upul;
10:342:2 Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films
DOI:10.1021/cm903636j JN:CHEMISTRY OF MATERIALS PY:2010
TC:22 AU: Li, Zhefeng;Gordon, Roy G.;Pallem, Venkateswara;Li, Huazhi;Shenai, Deo V.;
10:342:3 Sponge-like Nickel and Nickel Nitride Structures for Catalytic Applications
DOI:10.1002/adma.201304288 JN:ADVANCED MATERIALS PY:2014
TC:8 AU: Shalom, Menny;Molinari, Valerio;Esposito, Davide;Clavel, Guylhaine;Ressnig, Debora;Giordano, Cristina;Antonietti, Markus;
10:342:4 Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB2 Thin Films by Chemical Vapor Deposition
DOI:10.1021/cm303205u JN:CHEMISTRY OF MATERIALS PY:2013
TC:8 AU: Babar, S.;Kumar, N.;Zhang, P.;Abelson, J. R.;
10:342:5 Chemical routes to chalcogenide materials as thin films or particles with critical dimensions with the order of nanometres
DOI:10.1039/b923898k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:23 AU: Afzaal, Mohammad;Malik, Mohammad Azad;O'Brien, Paul;
10:342:6 Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition
DOI:10.1016/j.tsf.2013.05.117 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Ehsan, Muhammad Ali;Peiris, T. A. Nirmal;Wijayantha, K. G. Upul;Khaledi, Hamid;Ming, Huang Nay;Misran, Misni;Arifin, Zainudin;Mazhar, Muhammad;
10:342:7 A photoconductive semiconductor switch based on an individual ZnS nanobelt
DOI:10.1016/j.scriptamat.2009.12.031 JN:SCRIPTA MATERIALIA PY:2010
TC:12 AU: Zheng, X. J.;Chen, Y. Q.;Zhang, T.;Jiang, C. B.;Yang, B.;Yuan, B.;Mao, S. X.;Lie, W.;
10:342:8 Sol-Gel Processing of Bi2Ti2O7 and Bi2Ti4O11 Films with Photocatalytic Activity
DOI:10.1111/j.1551-2916.2010.03796.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:10 AU: Kidchob, Tongjit;Malfatti, Luca;Marongiu, Daniela;Enzo, Stefano;Innocenzi, Plinio;
10:342:9 Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia
DOI:10.1116/1.4865903 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Cloud, Andrew N.;Davis, Luke M.;Girolami, Gregory S.;Abelson, John R.;
10:342:10 Fabrication and photoelectrochemical studies of Bi2Ti2O7 pyrochlore thin films by aerosol assisted chemical vapour deposition
DOI:10.1016/j.matlet.2014.08.151 JN:MATERIALS LETTERS PY:2014
TC:0 AU: McInnes, Andrew;Sagu, Jagdeep S.;Wijayantha, K. G. U.;
10:342:11 Energetic stability and magnetic moment of tri-, tetra-, and octa- ferromagnetic element nitrides predicted by first-principle calculations
DOI:10.1016/j.jallcom.2014.04.171 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Imai, Yoji;Sohma, Mitsugu;Suemasu, Takashi;
10:342:12 Low-temperature CVD of eta-Mn3N2-x from bis[di(tert-butyl)amido]manganese(II) and ammonia
DOI:10.1116/1.4799036 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Spicer, Teresa S.;Spicer, Charles W.;Cloud, Andrew N.;Davis, Luke M.;Girolami, Gregory S.;Abelson, John R.;
10:342:13 Photocatalytic activity of tin-doped TiO2 film deposited via aerosol assisted chemical vapor deposition
DOI:10.1016/j.tsf.2012.12.066 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Chua, Chin Sheng;Tan, Ooi Kiang;Tse, Man Siu;Ding, Xingzhao;
10:342:14 Shear strength measurements of hafnium diboride thin solid films
DOI:10.1016/j.wear.2014.06.017 JN:WEAR PY:2014
TC:0 AU: Lee, Jungkyu;Polychronopoulou, Kyriaki;Cloud, Andrew N.;Abelson, John R.;Polycarpou, Andreas A.;
10:343:1 Preparation of Ni-doped ZnO ceramics for thermoelectric applications
DOI:10.1016/j.jeurceramsoc.2011.07.006 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:30 AU: Colder, H.;Guilmeau, E.;Harnois, C.;Marinel, S.;Retoux, R.;Savary, E.;
10:343:2 Energy transfer studies of Ce:Eu system in phosphate glasses
DOI:10.1016/j.jnoncrysol.2009.09.031 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:11 AU: Paulose, P. I.;Jose, Gijo;Unnikrishnan, N. V.;
10:343:3 Positive temperature coefficient and high Seebeck coefficient in ZnO-P2O5/Co composites
DOI:10.1016/j.jnoncrysol.2013.11.003 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2014
TC:0 AU: Oabi, O.;Maaroufi, A.;Lucas, B.;Degot, S.;El Amrani, A.;
10:343:4 Preparation and properties of Zn0.9Ni0.1O diluted magnetic semiconductor nanoparticles
DOI:10.1007/s11051-010-0084-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:16 AU: Srinivas, K.;Rao, S. Manjunath;Reddy, P. Venugopal;
10:343:5 Magneto-optic characteristics of ferric oxide quantum-dot-phosphate glass nanocomposite
DOI:10.1007/s00339-009-5481-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:7 AU: Kumar, Ganapathy;Apte, Sanjay K.;Garaje, Sunil N.;Kulkarni, Milind V.;Mahajan, Satish M.;Kale, B. B.;
10:343:6 New composites of ZnO-P2O5/Ni having PTC transition and high Seebeck coefficient
DOI:10.1016/j.jnoncrysol.2012.09.003 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:1 AU: Maaroufi, A.;Oabi, O.;Lucas, B.;El Amrani, A.;Degot, S.;
10:343:7 Electrical conductivity of new zinc phosphate glass/metal composites
DOI:10.1016/j.jnoncryso1.2012.06.028 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Maaroufi, A.;Oabi, O.;Pinto, G.;Ouchetto, M.;Benavente, R.;Perena, J. M.;
10:343:8 Nanosizing as a way to enhanced solubility of transition metals in ZnO
DOI:10.1007/s11051-013-1450-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Leitner, J.;Vonka, P.;Sedmidubsky, D.;Kamradek, M.;
10:343:9 First-Principles Study of the Electronic Structure and Thermoelectric Properties of Al-Doped ZnO
DOI:10.1007/s11664-013-2834-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:1 AU: Jantrasee, Sakwiboon;Pinitsoontorn, Supree;Moontragoon, Pairot;
10:343:10 Ni-doped vertically aligned zinc oxide nanorods prepared by hybrid wet chemical route
DOI:10.1016/j.tsf.2009.11.067 JN:THIN SOLID FILMS PY:2010
TC:19 AU: Gayen, R. N.;Rajaram, A.;Bhar, R.;Pal, A. K.;
10:343:11 Study of structural, electrical, optical, thermoelectric and photoconductive properties of S and Al co-doped SnO2 semiconductor thin films prepared by spray pyrolysis
DOI:10.1016/j.tsf.2012.06.075 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Moharrami, F.;Bagheri-Mohagheghi, M. -M.;Azimi-Juybari, H.;
10:343:12 Thermoelectric and photoconductivity properties of zinc oxide-tin oxide binary systems prepared by spray pyrolysis
DOI:10.1016/j.tsf.2013.12.010 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Ardyanian, M.;Moeini, M.;Juybari, H. Azimi;
10:343:13 Tin doped beta-In2S3 thin films prepared by spray pyrolysis: Correlation between structural, electrical, optical, thermoelectric and photoconductive properties
DOI:10.1016/j.tsf.2013.03.047 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Maha, M. Hasan Zadeh;Bagheri-Mohagheghi, M. -M.;Azimi-Juybari, H.;
10:343:14 Thermodynamics of the CoO-ZnO System at Bulk and Nanoscale
DOI:10.1021/cm3005198 JN:CHEMISTRY OF MATERIALS PY:2012
TC:7 AU: Ma, Chengcheng;Navrotsky, Alexandra;
10:343:15 Ferric oxide quantum dots in stable phosphate glass system and their magneto-optical study
DOI:10.1016/j.materresbull.2012.11.082 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Garaje, Sunil N.;Apte, Sanjay K.;Kumar, Ganpathy;Panmand, Rajendra P.;Naik, Sonali D.;Mahajan, Satish M.;Chand, Ramesh;Kale, Bharat B.;
10:344:1 Solid phase growth of tin oxide nanostructures
DOI:10.1016/j.mseb.2012.03.035 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:7 AU: Kamali, Ali Reza;Fray, Derek J.;
10:344:2 Optical properties of SnO2 nanostructures prepared via one-step thermal decomposition of tin (II) chloride dihydrate
DOI:10.1016/j.mseb.2012.02.006 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:11 AU: Al-Gaashani, R.;Radiman, S.;Tabet, N.;Daud, A. R.;
10:344:3 Luminescent and photocatalytic properties of hollow SnO2 nanospheres
DOI:10.1016/j.mseb.2013.03.006 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:3 AU: Zhu, Yanhua;Wang, Lingling;Huang, Guifang;Chai, Yifeng;Zhai, Xiang;Huang, Weiqing;
10:344:4 Synthesis and characterization of tin oxide (SnO2) nanocrystalline powders by a simple modified sol-gel route
DOI:10.1007/s00339-013-8197-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Wongsaprom, Kwanruthai;Bornphotsawatkun, Rung-arun;Swatsitang, Ekaphan;
10:344:5 Synthesis of SnO2 hollow microspheres from ultrasonic atomization and their role in hydrogen sensing
DOI:10.1016/j.mseb.2010.12.019 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:10 AU: Patil, L. A.;Shinde, M. D.;Bari, A. R.;Deo, V. V.;
10:344:6 Growth and lattice dynamics of single-crystalline SnO2 nanowires prepared by annealing a gel precursor
DOI:10.1016/j.matchemphys.2011.04.020 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:11 AU: Cheng, Baochang;Xie, Cuicui;Fang, Liting;Xiao, Yanhe;Lei, Shuijin;
10:344:7 Structural, electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD
DOI:10.1016/j.jcrysgro.2010.07.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Kong, Lingyi;Ma, Jin;Zhu, Zhen;Luan, Caina;Ji, Feng;
10:344:8 Production of SnO2 nano-particles by hydrogel thermal decomposition method
DOI:10.1016/j.matlet.2010.10.028 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Jajarmi, P.;Barzegar, S.;Ebrahimi, G. R.;Varahram, N.;
10:344:9 Effect of the graphite electrode material on the characteristics of molten salt electrolytically produced carbon nanomaterials
DOI:10.1016/j.matchar.2011.06.010 JN:MATERIALS CHARACTERIZATION PY:2011
TC:13 AU: Kamali, Ali Reza;Schwandt, Carsten;Fray, Derek J.;
10:345:1 Safe, stable and effective nanotechnology: phase mapping of ZnS nanoparticles
DOI:10.1039/b924697e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:28 AU: Feigl, C.;Russo, S. P.;Barnard, A. S.;
10:345:2 Molecular conformation dependent emission behaviour (blue, red and white light emissions) of all-trans-beta-carotene-ZnS quantum dot hybrid nanostructures
DOI:10.1039/c2jm32982d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:3 AU: Devarajan, V. Perumal;Nataraj, Devaraj;Pazhanivel, Thangavelu;Senthil, Karuppanan;Seol, Minsu;Yong, Kijung;Hermannsdorfer, Justus;Kempe, Rhett;
10:345:3 Tailoring the properties of aqueous-ionic liquid interfaces for tunable synthesis and self-assembly of ZnS nanoparticles
DOI:10.1039/c3ta15006b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Yao, Kaisheng;Lu, Weiwei;Li, Xinying;Wang, Jianji;
10:345:4 One-pot synthesis of monodispersed ZnS nanospheres with high antibacterial activity
DOI:10.1039/c0jm01776k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:20 AU: Li, Gaiping;Zhai, Junfeng;Li, Dan;Fang, Xiaona;Jiang, Hong;Dong, Qingzhe;Wang, Erkang;
10:345:5 Excitation induced tunable emission in biocompatible chitosan capped ZnS nanophosphors
DOI:10.1063/1.3374472 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Sharma, Manoj;Singh, Sukhvir;Pandey, O. P.;
10:345:6 Modelling polar wurtzite ZnS nanoparticles: the effect of sulphur supersaturation on size- and shape-dependent phase transformations
DOI:10.1039/c2jm33758d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:3 AU: Feigl, Christopher A.;Barnard, Amanda S.;Russo, Salvy P.;
10:345:7 Boosted UV emission at 349 nm from mesoporous ZnS
DOI:10.1007/s00339-013-7969-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Sajan, P.;Bushiri, Junaid M.;Vinod, R.;
10:345:8 Surface enhanced Raman scattering effect of CdSe/ZnS quantum dots hybridized with Au nanowire
DOI:10.1063/1.4788926 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Lee, Yong-Baek;Lee, Seok Ho;Lee, Sunmi;Lee, Hyunsoo;Kim, Jeongyong;Joo, Jinsoo;
10:345:9 Conformational behavior of DNA-templated CdS inorganic nanowire
DOI:10.1088/0957-4484/22/37/375604 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Pu, Shengyan;Zinchenko, Anatoly;Murata, Shizuaki;
10:345:10 One-pot synthesis of fluorescent hybrid nanoparticles and their assembly into transparent and multi-coloured nanofilms
DOI:10.1039/c2tc00312k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:2 AU: Fukui, Yuuka;Ozawa, Yui;Fujimoto, Keiji;
10:345:11 Red luminescent manganese-doped zinc sulphide nanocrystals and their antibacterial study
DOI:10.1039/c3tb21363c JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2014
TC:1 AU: Singh, Prashant K.;Sharma, Prashant K.;Kumar, Manvendra;Dutta, Ranu;Sundaram, Shanthy;Pandey, Avinash C.;
10:345:12 Effect of Annealing on the ZnS Nanocrystals Prepared by Chemical Precipitation Method
DOI:10.1155/2013/351798 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Shanmugam, Nadana;Cholan, Shanmugam;Kannadasan, Natesan;Sathishkumar, Kannadasan;Viruthagiri, G.;
10:346:1 Prediction of structure candidates for zinc oxide as a function of pressure and investigation of their electronic properties
DOI:10.1103/PhysRevB.89.075201 JN:PHYSICAL REVIEW B PY:2014
TC:1 AU: Zagorac, D.;Schoen, J. C.;Zagorac, J.;Jansen, M.;
10:346:2 Structural characterization of self-assembled ZnO nanoparticles obtained by the sol-gel method from Zn(CH3COO)(2)center dot 2H(2)O
DOI:10.1088/0957-4484/22/39/395603 JN:NANOTECHNOLOGY PY:2011
TC:16 AU: Golic, D. Lukovic;Brankovic, G.;Nesic, M. Pocuca;Vojisavljevic, K.;Recnik, A.;Daneu, N.;Bernik, S.;Scepanovic, M. .;Poleti, D.;Brankovic, Z.;
10:346:3 An investigation into the influence of zinc precursor on the microstructural, photoluminescence, and gas-sensing properties of ZnO nanoparticles
DOI:10.1007/s11051-014-2760-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Catto, Ariadne C.;da Silva, Luis F.;Bernardi, Maria I. B.;Li, Maximo S.;Longo, Elson;Lisboa-Filho, Paulo N.;Nascimento, Otaciro R.;Mastelaro, Valmor R.;
10:346:4 Defect induced variation in vibrational and optoelectronic properties of nanocrystalline ZnO powders
DOI:10.1063/1.3525987 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Scepanovic, Maja;Grujic-Brojcin, Mirjana;Vojisavljevic, Katarina;Sreckovic, Tatjana;
10:346:5 Ab initio structure prediction for lead sulfide at standard and elevated pressures
DOI:10.1103/PhysRevB.84.045206 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Zagorac, D.;Doll, K.;Schoen, J. C.;Jansen, M.;
10:346:6 Structural and magnetic properties of cobalt-doped ZnO thin films on sapphire (0001) substrate deposited by pulsed laser deposition
DOI:10.1016/j.jallcom.2013.07.113 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Yang, Shanying;Lv, Rongqing;Wang, Changzheng;Liu, Yunyan;Song, Zeqing;
10:346:7 Electron beam induced nanostructures and band gap tuning of ZnO thin films
DOI:10.1016/j.jallcom.2013.02.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Siraj, K.;Javaid, Kashif;Pedarnig, J. D.;Bodea, M. A.;Naseem, S.;
10:346:8 Alternative structure predicted for lithium at ambient pressure
DOI:10.1103/PhysRevB.84.172101 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Kulkarni, A.;Doll, K.;Prasad, D. L. V. K.;Schoen, J. C.;Jansen, M.;
10:346:9 Microscopic view of the role of repeated polytypism in self-organization of hierarchical nanostructures
DOI:10.1103/PhysRevB.87.085306 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Liu, Ming;Ma, Guo-Bin;Xiong, Xiang;Wang, Zhao-Wu;Peng, Ru-Wen;Zheng, Jian-Guo;Shu, Da-Jun;Zhang, Zhenyu;Wang, Mu;
10:346:10 Effect of oxygen partial pressure on the photoluminescence properties of sol-gel synthesized nano-structured ZnO thin films
DOI:10.1016/j.tsf.2013.10.045 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Das, Sagnik;Bhattacharjee, Kaustav;Maitra, Saikat;Das, G. C.;
10:347:1 Scale-up synthesis of ZnO nanorods for printing inexpensive ZnO/polymer white light-emitting diode
DOI:10.1007/s10853-012-6342-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:8 AU: Amin, G.;Sandberg, M. O.;Zainelabdin, A.;Zaman, S.;Nur, O.;Willander, M.;
10:347:2 Morphological syntheses of ZnO nanostructures under microwave irradiation
DOI:10.1007/s10853-012-7017-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: Shen, Xiaoping;Sun, Jiquan;Zhu, Guoxing;Ji, Zhenyuan;Chen, Zhixin;Li, Niya;
10:347:3 Diameter regulated ZnO nanorod synthesis and its application in gas sensor optimization
DOI:10.1016/j.jallcom.2013.10.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:11 AU: Yin, Mingli;Liu, Mengdi;Liu, Shengzhong;
10:347:4 A study on rapid growth and piezoelectric effect of ZnO nanowires array
DOI:10.1016/j.matchemphys.2012.04.032 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Hsu, Nai-Feng;Chang, Ming;
10:347:5 Experimental study of electrical properties of ZnO nanowire random networks for gas sensing and electronic devices
DOI:10.1007/s00339-010-5567-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:18 AU: Zhang, D.;Chava, S.;Berven, C.;Lee, S. K.;Devitt, R.;Katkanant, V.;
10:347:6 A rapid synthesis/growth process producing massive ZnO nanowires for humidity and gas sensing
DOI:10.1007/s00339-013-8217-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Hsu, Nai-Feng;Chung, Tien-Kan;
10:347:7 Giant temperature coefficient of resistance in Co-doped ZnO thin films
DOI:10.1007/s00339-013-7665-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Zhou, X. F.;Zhang, H.;Yan, H.;He, C. L.;Lu, M. H.;Hao, R. Y.;
10:347:8 Capillary-driven assembly of ZnO nanowire arrays into micropatterns
DOI:10.1016/j.matchemphys.2010.02.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:7 AU: Tang, Yang;Zhao, Dongxu;Chen, Jie;Wanderka, Nelia;Shen, Dezhen;Fang, Fang;Guo, Zhen;Zhang, Jiying;Wang, Xiaohua;
10:347:9 Visible light emission and UV light detection properties of solution-grown ZnO/polymer heterojunction diodes on stainless steel foil
DOI:10.1016/j.apsusc.2014.05.122 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Rakhshani, A. E.;
10:347:10 Distribution-tunable growth of ZnO nanorods on the inner walls of microcapillaries from reverse micelle deriving seed patterns
DOI:10.1016/j.matchemphys.2009.08.056 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:5 AU: He, Zhongyuan;Zhang, Qinghong;Li, Yaogang;Wang, Hongzhi;
10:348:1 Chemically fashioned ZnO nanowalls and their potential application for potentiometric cholesterol biosensor
DOI:10.1063/1.3599583 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Israr, M. Q.;Sadaf, J. R.;Nur, O.;Willander, M.;Salman, S.;Danielsson, B.;
10:348:2 Synthesis and neuro-cytocompatibility of magnetic Zn-ferrite nanorods via peptide-assisted process
DOI:10.1016/j.jcis.2013.07.017 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:0 AU: Zou, Yuanwen;Huang, Zhongbing;Deng, Min;Yin, Guangfu;Chen, Xianchun;Liu, Juan;Wang, Yan;Yan, Li;Gu, Jianwen;
10:348:3 Cathodoluminescence characterization of ZnO nanorods synthesized by chemical solution and of its conversion to ellipsoidal morphology
DOI:10.1557/jmr.2014.242 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:0 AU: Israr-Qadir, Muhammad;Jamil-Rana, Sadaf;Nur, Omer;Willander, Magnus;Lu, Jun;Hultman, Lars;
10:348:4 Potentiometric cholesterol biosensor based on ZnO nanorods chemically grown on Ag wire
DOI:10.1016/j.tsf.2010.08.052 JN:THIN SOLID FILMS PY:2010
TC:26 AU: Israr, M. Q.;Sadaf, J. R.;Asif, M. H.;Nur, O.;Willander, M.;Danielsson, B.;
10:348:5 Cellular Compatibility of Biomineralized ZnO Nanoparticles Based on Prokaryotic and Eukaryotic Systems
DOI:10.1021/la2008107 JN:LANGMUIR PY:2011
TC:10 AU: Yan, Danhong;Yin, Guangfu;Huang, Zhongbing;Li, Liang;Liao, Xiaoming;Chen, Xianchun;Yao, Yadong;Hao, Baoqing;
10:348:6 Core-shell and multilayered magnetite nanoparticles-Structural and Mossbauer studies
DOI:10.1016/j.apsusc.2014.04.102 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Kalska-Szostko, B.;Wykowska, U.;Satula, D.;
10:348:7 Fabrication of ZnO nanodisks from structural transformation of ZnO nanorods through natural oxidation and their emission characteristics
DOI:10.1016/j.ceramint.2013.08.017 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Israr-Qadir, M.;Jamil-Rana, S.;Nur, O.;Willander, M.;Larsson, L. A.;Holtz, P. O.;
10:348:8 Biochemical-, Biophysical-, and Microarray-Based Antifungal Evaluation of the Buffer-Mediated Synthesized Nano Zinc Oxide: An in Vivo and in Vitro Toxicity Study
DOI:10.1021/la304120k JN:LANGMUIR PY:2012
TC:11 AU: Patra, Prasun;Mitra, Shouvik;Debnath, Nitai;Goswami, Arunava;
10:348:9 Enzymes immobilization on Fe3O4-gold nanoparticles
DOI:10.1016/j.apsusc.2011.10.132 JN:APPLIED SURFACE SCIENCE PY:2012
TC:20 AU: Kalska-Szostko, B.;Rogowska, M.;Dubis, A.;Szymanski, K.;
10:348:10 Naturally oxidized synthesis of ZnO dahlia-flower nanoarchitecture
DOI:10.1016/j.ceramint.2014.04.108 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Jamil-Rana, S.;Israr-Qadir, M.;Nur, O.;Willander, M.;
10:348:11 Surface modification of core-shell nanowire with protein adsorption
DOI:10.1016/j.matchemphys.2011.04.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Kalska-Szostko, B.;Orzechowska, E.;
10:348:12 Enzymatic synthesis of gold nanoflowers with trypsin
DOI:10.1088/0957-4484/21/30/305603 JN:NANOTECHNOLOGY PY:2010
TC:21 AU: Li, Linmei;Weng, Jian;
10:348:13 Surface modification of carbon fiber by direct growth of zinc oxide nanowalls using a radio-frequency magnetron sputtering technique
DOI:10.1016/j.tsf.2014.02.112 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Sharma, Sahendra P.;Chang, C. K.;Ting, Jyh-Ming;
10:349:1 Formation behavior of BexZn1-xO alloys grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.4807605 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Chen, Mingming;Zhu, Yuan;Su, Longxing;Zhang, Quanlin;Chen, Anqi;Ji, Xu;Xiang, Rong;Gui, Xuchun;Wu, Tianzhun;Pan, Bicai;Tang, Zikang;
10:349:2 The wurtzite-rocksalt phase transition for a BexMgyZn1-x-yO alloy: Be content vs Mg content
DOI:10.1016/j.jallcom.2014.04.122 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Yong, D. Y.;He, H. Y.;Su, L. X.;Zhu, Y.;Tang, Z. K.;Pan, B. C.;
10:349:3 Structure and optical properties of ternary alloy BeZnO and quaternary alloy BeMgZnO films growth by molecular beam epitaxy
DOI:10.1016/j.apsusc.2013.03.058 JN:APPLIED SURFACE SCIENCE PY:2013
TC:12 AU: Su, Longxing;Zhu, Yuan;Zhang, Quanlin;Chen, Mingming;Wu, Tianzhun;Gui, Xuchun;Pan, Bicai;Xiang, Rong;Tang, Zikang;
10:349:4 Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap
DOI:10.1016/j.jcrysgro.2014.04.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Toporkov, M.;Avrutin, V.;Okur, S.;Izyumskaya, N.;Demchenko, D.;Volk, J.;Smith, D. J.;Morkoc, H.;Oezguer, U.;
10:349:5 Composition-temperature phase diagram of BexZn1-xO from first principles
DOI:10.1016/j.commatsci.2010.01.040 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:11 AU: Gan, Chee Kwan;Fan, Xiao Feng;Kuo, Jer-Lai;
10:349:6 Influence of interstitial beryllium on properties of ZnO: A first-principle research
DOI:10.1016/j.commatsci.2012.04.008 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:4 AU: Kong, F. T.;Gong, H. R.;
10:349:7 Interstitial hydrogen in ZnO and BeZnO
DOI:10.1016/j.ijhydene.2013.02.059 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:1 AU: Kong, F. T.;Tao, H. J.;Gong, H. R.;
10:349:8 A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system
DOI:10.1016/j.jcrysgro.2010.02.014 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Yu, J. H.;Kim, J. H.;Park, D. S.;Kim, T. S.;Jeong, T. S.;Youn, C. J.;Hong, K. J.;
10:349:9 Post-growth annealing and wide bandgap modulation of BeZnO layers grown by RF co-sputtering of ZnO and Be targets
DOI:10.1007/s10853-009-3902-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:6 AU: Yu, J. H.;Park, D. S.;Kim, J. H.;Jeong, T. S.;Youn, C. J.;Hong, K. J.;
10:349:10 Temperature-dependent structural relaxation of BeZnO alloys
DOI:10.1063/1.4818155 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Su, Longxing;Zhu, Yuan;Chen, Mingming;Zhang, Quanlin;Su, Yuquan;Ji, Xu;Wu, Tianzhun;Gui, Xuchun;Xiang, Rong;Tang, Zikang;
10:349:11 Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement
DOI:10.1007/s10853-012-6445-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Yu, J. H.;Kim, J. H.;Yang, H. J.;Kim, T. S.;Jeong, T. S.;Youn, C. J.;Hong, K. J.;
10:349:12 Controlled hydrothermal growth and optical characterization of wide band gap Be (x) Zn1-x O nanorod arrays
DOI:10.1007/s10853-013-7197-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:0 AU: Zeng, Chunyan;Zhang, Weixin;Li, Bin Bin;Xu, Xiaofeng;de Souza, Christina F.;Ruda, Harry E.;
10:349:13 An empirical law for the band gaps of MgZnO nanowires
DOI:10.1063/1.3671013 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Zhang, Y. G.;He, H. Y.;Pan, B. C.;
10:350:1 Influences in high quality zinc oxide films and their photoelectrochemical performance
DOI:10.1016/j.jallcom.2010.05.019 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:23 AU: Shinde, S. S.;Patil, Prakash S.;Gaikwad, R. S.;Mane, R. S.;Pawar, B. N.;Rajpure, K. Y.;
10:350:2 Influence of tin doping onto structural, morphological, optoelectronic and impedance properties of sprayed ZnO thin films
DOI:10.1016/j.jallcom.2012.11.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:11 AU: Shinde, S. S.;Korade, A. P.;Bhosale, C. H.;Rajpure, K. Y.;
10:350:3 X-ray photoelectron spectroscopic study of catalyst based zinc oxide thin films
DOI:10.1016/j.jallcom.2011.01.117 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Shinde, S. S.;Rajpure, K. Y.;
10:350:4 Sprayed lanthanum doped zinc oxide thin films
DOI:10.1016/j.apsusc.2011.11.019 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Bouznit, Y.;Beggah, Y.;Ynineb, F.;
10:350:5 Structural, morphological and electrical properties of spray deposited CdIn2Se4 thin films
DOI:10.1016/j.jallcom.2010.12.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Nikale, V. M.;Shinde, S. S.;Bhosale, C. H.;Rajpure, K. Y.;
10:350:6 Physical properties of chemical vapour deposited nanostructured carbon thin films
DOI:10.1016/j.jallcom.2010.11.021 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Mahadik, D. B.;Shinde, S. S.;Bhosale, C. H.;Rajpure, K. Y.;
10:350:7 Semiconductor-septum solar rechargeable storage cells
DOI:10.1016/j.jallcom.2010.10.020 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:2 AU: Sawant, R. R.;Shinde, S. S.;Bhosale, C. H.;Rajpure, K. Y.;
10:350:8 Synthesis of CdIn2Se4 compound used as thermoelectric materials via the solution method
DOI:10.1016/j.jallcom.2010.04.023 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:2 AU: Adpakpang, Kanyaporn;Sarakonsri, Thapanee;Isoda, Seiji;Shinoda, Yasuhiro;Thanachayanont, Chanchana;
10:350:9 Synthesis of CdIn2Se4 and Cu0.5Ag1.5InSe3 Compounds via Chemical and Solid-State Methods
DOI:10.1007/s11664-013-2961-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Laokawee, Viratchara;Sarakonsri, Thapanee;Thanachayanont, Chanchana;
10:350:10 Electrosynthesis and studies on Cadmium-Indium-Selenide thin films
DOI:10.1016/j.mseb.2010.03.055 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Mahalingam, T.;Thanikaikarasan, S.;Chandramohan, R.;Chung, Kihyun;Chu, J. P.;Velumani, S.;Rhee, Jin-Koo;
10:351:1 Recent advances in wide bandgap semiconductor biological and gas sensors
DOI:10.1016/j.pmatsci.2009.08.003 JN:PROGRESS IN MATERIALS SCIENCE PY:2010
TC:114 AU: Pearton, S. J.;Ren, F.;Wang, Yu-Lin;Chu, B. H.;Chen, K. H.;Chang, C. Y.;Lim, Wantae;Lin, Jenshan;Norton, D. P.;
10:351:2 Characterization and photocatalytic activity of (ZnO-CuO)/SBA-15 nanocomposites synthesized by two-solvent method
DOI:10.1016/j.materresbull.2014.05.012 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Dai, Peng;Zhang, Lili;Zhang, Gongtuo;Li, Guang;Sun, Zhaoqi;Liu, Xiansong;Wu, Mingzai;
10:351:3 AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study
DOI:10.1016/j.bios.2012.09.066 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:6 AU: Huang, Chih-Cheng;Lee, Geng-Yen;Chyi, Jen-Inn;Cheng, Hui-Teng;Hsu, Chen-Pin;Hsu, You-Ren;Hsu, Chia-Hsien;Huang, Yu-Fen;Sun, Yuh-Chang;Chen, Chih-Chen;Li, Sheng-Shian;Yeh, J. Andrew;Yao, Da-Jeng;Ren, Fan;Wang, Yu-Lin;
10:351:4 Multi-sample acoustic biosensing microsystem for protein interaction analysis
DOI:10.1016/j.bios.2011.05.030 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:18 AU: Mitsakakis, Konstantinos;Gizeli, Electra;
10:351:5 Analyte-Driven Switching of DNA Charge Transport: De Novo Creation of Electronic Sensors for an Early Lung Cancer Biomarker
DOI:10.1021/ja305458u JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:10 AU: Thomas, Jason M.;Chakraborty, Banani;Sen, Dipankar;Yu, Hua-Zhong;
10:351:6 Acoustic Characterization of Nanoswitch Structures: Application to the DNA Holliday Junction
DOI:10.1021/nl103491v JN:NANO LETTERS PY:2010
TC:18 AU: Papadakis, George;Tsortos, Achilleas;Gizeli, Electra;
10:351:7 Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
DOI:10.1063/1.4803916 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Kang, Yen-Wen;Lee, Geng-Yen;Chyi, Jen-Inn;Hsu, Chen-Pin;Hsu, You-Ren;Hsu, Chia-Hsien;Huang, Yu-Fen;Sun, Yuh-Chang;Chen, Chih-Chen;Hung, Sheng Chun;Ren, Fan;Yeh, J. Andrew;Wang, Yu-Lin;
10:351:8 Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor
DOI:10.1016/j.apsusc.2012.11.141 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Khun, K.;Ibupoto, Z. H.;Chey, C. O.;Lu, Jun;Nur, O.;Willander, M.;
10:351:9 A sensitive quartz crystal microbalance assay of adenosine triphosphate via DNAzyme-activated and aptamer-based target-triggering circular amplification
DOI:10.1016/j.bios.2013.09.067 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:6 AU: Song, Weiling;Zhu, Zheng;Mao, Yaning;Zhang, Shusheng;
10:351:10 Fluorescence aptameric sensor for isothermal circular strand-displacement polymerization amplification detection of adenosine triphosphate
DOI:10.1016/j.bios.2014.04.030 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:7 AU: Song, Weiling;Zhang, Qiao;Xie, Xuxu;Zhang, Shusheng;
10:351:11 Detection of CO2 in solution with a Pt-NiO solid-state sensor
DOI:10.1016/j.jcis.2010.04.020 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:4 AU: Yue, Zhao;Niu, Wencheng;Zhang, Wei;Liu, Guohua;Parak, Wolfgang J.;
10:351:12 New complexes based on tridentate bispyrazole ligand for optical gas sensing
DOI:10.1016/j.matchemphys.2010.11.008 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Touzani, Rachid;Vasapollo, Guiseppe;Scorrano, Sonia;Del Sole, Roberta;Manera, Maria Grazia;Rella, Roberto;El Kadiri, Sghir;
10:352:1 A Mobile Sn Nanowire Inside a beta-Ga2O3 Tube: A Practical Nanoscale Electrically/Thermally Driven Switch
DOI:10.1002/smll.201101204 JN:SMALL PY:2011
TC:8 AU: Zou, Rujia;Zhang, Zhenyu;Tian, Qiwei;Ma, Guanxing;Song, Guosheng;Chen, Zhigang;Hu, Junqing;
10:352:2 Magnetoresistance based resonance monitoring with pulse-excited planar coils
DOI:10.1063/1.4802756 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Hu, Jiafei;Tian, Wugang;Zhao, Jianqiang;Pan, Mengchun;Chen, Dixiang;Tian, Guiyun;Luo, Feilu;
10:352:3 Ultralow Superharmonic Resonance for Functional Nanowires
DOI:10.1021/nl903302q JN:NANO LETTERS PY:2010
TC:14 AU: Cohen-Tanugi, David;Akey, Austin;Yao, Nan;
10:352:4 Thermoelectric-mechanical vibration of piezoelectric nanobeams based on the nonlocal theory
DOI:10.1088/0964-1726/21/2/025018 JN:SMART MATERIALS & STRUCTURES PY:2012
TC:26 AU: Ke, Liao-Liang;Wang, Yue-Sheng;
10:352:5 Helium ion beam milling to create a nano-structured domain wall magnetoresistance spin valve
DOI:10.1088/0957-4484/23/39/395302 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Wang, Yudong;Boden, S. A.;Bagnall, D. M.;Rutt, H. N.;de Groot, C. H.;
10:352:6 Nonlinear optical mass sensor with an optomechanical microresonator
DOI:10.1063/1.4757004 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Li, Jin-Jin;Zhu, Ka-Di;
10:352:7 Integrating magnetoresistive sensors with microelectromechanical systems for noise reduction
DOI:10.1063/1.4769903 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Hu, Jiafei;Pan, Mengchun;Tian, Wugang;Chen, Dixiang;Luo, Feilu;
10:352:8 Domain wall configuration and magneto-transport properties in dual spin-valve with nanoconstriction
DOI:10.1063/1.4729126 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Chun, Byong Sun;Wu, Han-Chun;Noh, Su Jung;Chu, In Chang;Serrano-Guisan, Santiago;Hwang, Chanyong;Shvets, Igor V.;Liao, Zhi-Min;Abid, Mohamed;Kim, Young Keun;
10:352:9 A Timoshenko beam model for cantilevered piezoelectric energy harvesters
DOI:10.1088/0964-1726/19/5/055018 JN:SMART MATERIALS & STRUCTURES PY:2010
TC:17 AU: Dietl, J. M.;Wickenheiser, A. M.;Garcia, E.;
10:352:10 Adjustable stiffness of individual piezoelectric nanofibers by electron beam polarization
DOI:10.1063/1.3660226 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Chen, Xi;Li, Anton;Yao, Nan;Shi, Yong;
10:352:11 Wiring Nanoscale Biosensors with Piezoelectric Nanomechanical Resonators
DOI:10.1021/nl100245z JN:NANO LETTERS PY:2010
TC:8 AU: Sadek, Akram S.;Karabalin, Rassul B.;Du, Jiangang;Roukes, Michael L.;Koch, Christof;Masmanidis, Sotiris C.;
10:352:12 Stability control of nonlinear micromechanical resonators under simultaneous primary and superharmonic resonances
DOI:10.1063/1.3589988 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Kacem, N.;Baguet, S.;Dufour, R.;Hentz, S.;
10:352:13 Vibration suppression of composite laminated beams using distributed piezoelectric patches
DOI:10.1088/0964-1726/19/11/115018 JN:SMART MATERIALS & STRUCTURES PY:2010
TC:9 AU: Foda, M. A.;Almajed, A. A.;ElMadany, M. M.;
10:352:14 Distributed piezoelectric sensors for boundary force measurements in Euler-Bernoulli beams
DOI:10.1088/0964-1726/20/7/075009 JN:SMART MATERIALS & STRUCTURES PY:2011
TC:4 AU: Chesne, S.;Pezerat, C.;
10:353:1 Orientation and Morphological Evolution of Catalyst Nanoparticles During Carbon Nanotube Growth
DOI:10.1021/nn100944n JN:ACS NANO PY:2010
TC:28 AU: Behr, Michael J.;Mkhoyan, K. Andre;Aydil, Eray S.;
10:353:2 Encapsulation of Cu(InGa)Se-2 solar cell with Al2O3 thin-film moisture barrier grown by atomic layer deposition
DOI:10.1016/j.solmat.2010.08.021 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:25 AU: Carcia, P. F.;McLean, R. S.;Hegedus, Steven;
10:353:3 Damp heat stable doped zinc oxide films
DOI:10.1016/j.tsf.2013.08.011 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Huepkes, J.;Owen, J. I.;Wimmer, M.;Ruske, F.;Greiner, D.;Klenk, R.;Zastrow, U.;Hotovy, J.;
10:353:4 Sputter deposition of semicrystalline tin dioxide films
DOI:10.1016/j.tsf.2011.10.169 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Tosun, B. Selin;Feist, Rebekah K.;Gunawan, Aloysius;Mkhoyan, K. Andre;Campbell, Stephen A.;Aydil, Eray S.;
10:353:5 High temperature stability of dye solar cells
DOI:10.1016/j.solmat.2013.04.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2013
TC:20 AU: Jiang, Nancy;Sumitomo, Taro;Lee, Timothy;Pellaroque, Alba;Bellon, Olivier;Milliken, Damion;Desilvestro, Hans;
10:353:6 Dye stability and performances of dye-sensitized solar cells with different nitrogen additives at elevated temperatures-Can sterically hindered pyridines prevent dye degradation?
DOI:10.1016/j.solmat.2010.04.076 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:33 AU: Nguyen, Phuong Tuyet;Andersen, Anders Rand;Skou, Eivind Morten;Lund, Torben;
10:353:7 Effects of ZnO:Al films on CIGS PV modules degraded under accelerated damp heat
DOI:10.1016/j.solmat.2012.05.002 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:10 AU: Lee, Dong-Won;Kwon, Oh-Yun;Song, Jun-Kwang;Park, Chi-Hong;Park, Kyung-Eun;Nam, Song-Min;Kim, Yong-Nam;
10:353:8 Improving the damp-heat stability of copper indium gallium diselenide solar cells with a semicrystalline tin dioxide overlayer
DOI:10.1016/j.solmat.2012.02.017 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:8 AU: Tosun, B. Selin;Feist, Rebekah K.;Gunawan, Aloysius;Mkhoyan, K. Andre;Campbell, Stephen A.;Aydil, Eray S.;
10:353:9 Tin dioxide as an alternative window layer for improving the damp-heat stability of copper indium gallium diselenide solar cells
DOI:10.1116/1.3692225 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:0 AU: Tosun, B. Selin;Feist, Rebekah K.;Campbell, Stephen A.;Aydil, Eray S.;
10:353:10 Development of large area photovoltaic dye cells at 3GSolar
DOI:10.1016/j.solmat.2009.11.019 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:18 AU: Goldstein, Jonathan;Yakupov, Ilya;Breen, Barry;
10:354:1 Effect of oxygen vacancy and dopant concentration on the magnetic properties of high spin Co2+ doped TiO2 nanoparticles
DOI:10.1016/j.jmmm.2010.09.043 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:34 AU: Choudhury, B.;Choudhury, A.;Islam, A. K. M. Maidul;Alagarsamy, P.;Mukherjee, M.;
10:354:2 Novel magnetic behavior of Mn-doped ZnO hierarchical hollow spheres
DOI:10.1007/s11051-011-0659-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:7 AU: Hao, YaoMing;Lou, ShiYun;Zhou, ShaoMin;Wang, YongQiang;Chen, XiLiang;Zhu, GongYu;Yuan, RuiJian;Li, Ning;
10:354:3 Synthesis of nanosized (Co, Nb, Sm)-doped SnO2 powders using co-precipitation method
DOI:10.1016/j.jallcom.2010.01.099 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:16 AU: Bastami, H.;Taheri-Nassaj, E.;
10:354:4 Role of aqueous ammonia on the growth of ZnO nanostructures and its influence on solid-state dye sensitized solar cells
DOI:10.1007/s10853-012-6981-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Kanmani, S. S.;Ramachandran, K.;
10:354:5 Synthesis, characterization, and FTIR study on Sn1-X MnXO2 powders
DOI:10.1016/j.powtec.2012.12.012 JN:POWDER TECHNOLOGY PY:2013
TC:0 AU: Dakhel, A. A.;
10:354:6 Effects of temperature and atmosphere on the magnetic properties of Co-doped ZnO rods
DOI:10.1016/j.jmmm.2011.02.032 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:12 AU: Xu, Xingyan;Cao, Chuanbao;Chen, Zhuo;
10:354:7 Impedance performances of SnO2-Zn2SnO4 composite ceramics
DOI:10.1016/j.jallcom.2013.07.152 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Zang, Guo-Zhong;Li, Li-Ben;Liu, Huan-Huan;Wang, Xiao-Fei;Gai, Zhi-Gang;
10:354:8 (Co, Nb, Sm)-Doped Tin Dioxide Varistor Ceramics Sintered Using Nanopowders Prepared by Coprecipitation Method
DOI:10.1111/j.1551-2916.2011.04467.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:4 AU: Bastami, Hajieh;Taheri-Nassaj, Ehsan;Smet, Philippe F.;Korthout, Katleen;Poelman, Dirk;
10:354:9 Room-temperature ferromagnetism of diamagnetically-doped ZnO aligned nanorods fabricated by vapor reaction
DOI:10.1007/s00339-010-6011-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Zhou, ShaoMin;Liu, LiSheng;Lou, ShiYun;Wang, YongQiang;Chen, XiLiang;Yuan, HongLei;Hao, YaoMing;Yuan, RuiJian;Li, Ning;
10:354:10 Electrical properties and AC degradation characteristics of low voltage ZnO varistors doped with Nd2O3
DOI:10.1016/j.ceramint.2009.12.006 JN:CERAMICS INTERNATIONAL PY:2010
TC:4 AU: Wang, Mao-hua;Tang, Qing-hua;Yao, Chao;
10:355:1 Sol-Gel Growth of Hexagonal Faceted ZnO Prism Quantum Dots with Polar Surfaces for Enhanced Photocatalytic Activity
DOI:10.1021/am100274d JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:61 AU: Zhang, Luyuan;Yin, Longwei;Wang, Chengxiang;Lun, Ning;Qi, Yongxin;
10:355:2 Size control of sol-gel-synthesized ZnO quantum dots using photo-induced desorption
DOI:10.1088/0957-4484/22/21/215605 JN:NANOTECHNOLOGY PY:2011
TC:14 AU: Liu, Y.;Morishima, T.;Yatsui, T.;Kawazoe, T.;Ohtsu, M.;
10:355:3 Preparation and photocatalytic activity of MgxZn1-xO thin films on silicon substrate through sol-gel process
DOI:10.1016/j.apsusc.2014.03.192 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Liu, Changlong;Shang, Fengjiao;Pan, Guangcai;Wang, Feng;Zhou, Zhitao;Gong, Wanbing;Zi, Zhenfa;Wei, Yiyong;Chen, Xiaoshuang;Lv, Jianguo;He, Gang;Zhang, Miao;Song, Xueping;Sun, Zhaoqi;
10:355:4 Solution-processed anchoring zinc oxide quantum dots on covalently modified graphene oxide
DOI:10.1007/s11051-014-2704-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Zhang, Zengxing;Li, Dong;Wang, Yipu;Wang, Xiaojuan;Zou, Liping;Zhang, Qichong;Ge, Binghui;
10:355:5 Self-assembly method of linearly aligning ZnO quantum dots for a nanophotonic signal transmission device
DOI:10.1063/1.3372639 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Yatsui, T.;Ryu, Y.;Morishima, T.;Nomura, W.;Kawazoe, T.;Yonezawa, T.;Washizu, M.;Fujita, H.;Ohtsu, M.;
10:355:6 Emission from a dipole-forbidden energy state in a ZnO quantum dot induced by a near-field interaction with a fiber probe
DOI:10.1063/1.4723574 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Yatsui, T.;Tsuji, M.;Liu, Y.;Kawazoe, T.;Ohtsu, M.;
10:355:7 Stochastic processes in light-assisted nanoparticle formation
DOI:10.1063/1.4711808 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Naruse, Makoto;Liu, Yang;Nomura, Wataru;Yatsui, Takashi;Aida, Masaki;Kish, Laszlo B.;Ohtsu, Motoichi;
10:355:8 Effects of laser irradiation on the self-assembly of MnAs nanoparticles in a GaAs matrix
DOI:10.1063/1.4765355 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Pham Nam Hai;Nomura, Wataru;Yatsui, Takashi;Ohtsu, Motoichi;Tanaka, Masaaki;
10:355:9 Magnetic ZnFe2O4 octahedra: Synthesis and visible light induced photocatalytic activities
DOI:10.1016/j.matlet.2013.02.014 JN:MATERIALS LETTERS PY:2013
TC:14 AU: Sun, Yuanyuan;Wang, Wenzhong;Zhang, Ling;Sun, Songmei;Gao, Erping;
10:355:10 Log-normal distribution of single molecule fluorescence bursts in micro/nano-fluidic channels
DOI:10.1063/1.3648118 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Kish, Lazar L.;Kameoka, Jun;Granqvist, Claes G.;Kish, Laszlo B.;
10:355:11 Emission from a dipole-forbidden energy state in a GaAs quantum-ring induced by dressed photon
DOI:10.1007/s00339-013-7905-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Yatsui, T.;Nomura, W.;Mano, T.;Miyazaki, H. T.;Sakoda, K.;Kawazoe, T.;Ohtsu, M.;
10:355:12 Optimum drift velocity for single molecule fluorescence bursts in micro/nano-fluidic channels
DOI:10.1063/1.4739471 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Kish, Lazar L.;Kameoka, Jun;Granqvist, Claes G.;Kish, Laszlo B.;
10:356:1 Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode
DOI:10.1007/s10853-013-7438-y JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: Rakhshani, A. E.;Thomas, S.;
10:356:2 Demonstration of homojunction ZnTe solar cells
DOI:10.1063/1.3463421 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Tanaka, Tooru;Yu, Kin M.;Stone, Peter R.;Beeman, Jeffrey W.;Dubon, Oscar D.;Reichertz, Lothar A.;Kao, Vincent M.;Nishio, Mitsuhiro;Walukiewicz, Wladek;
10:356:3 Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy
DOI:10.1063/1.4794950 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Guo, Qixin;Takahashi, Kazutoshi;Saito, Katsuhiko;Akiyama, Hajime;Tanaka, Tooru;Nishio, Mitsuhiro;
10:356:4 Thickness-dependent field emission from ZnTe films prepared by magnetron sputtering
DOI:10.1016/j.jallcom.2012.09.046 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Zhang, Zhenxing;Li, Jian;Zhang, Haijun;Pan, Xiaojun;Xie, Erqing;
10:356:5 Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films
DOI:10.1063/1.4829453 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: El Akkad, Fikry;Abdulraheem, Yaser;
10:356:6 ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells
DOI:10.1007/s11664-011-1641-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:9 AU: Wang, W.;Phillips, J. D.;Kim, S. J.;Pan, X.;
10:356:7 Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.tsf.2011.01.231 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Nishio, M.;Kai, K.;Saito, K.;Tanaka, T.;Guo, Q.;
10:356:8 Studies on the photoconductivity of vacuum deposited ZnTe thin films
DOI:10.1016/j.materresbull.2010.06.050 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:5 AU: Rao, Gowrish K.;Bangera, Kasturi V.;Shivakumar, G. K.;
10:356:9 Effect of substrate temperature on photoconductivity, structural, and optical properties of vacuum evaporated Zinc Telluride films
DOI:10.1016/j.jallcom.2012.06.096 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Seyam, M. A. M.;
10:356:10 Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2011.12.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Guo, Qixin;Akiyama, Hajime;Mikuriya, Yuta;Saito, Katsuhiko;Tanaka, Tooru;Nishio, Mitsuhiro;
10:356:11 Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2012.07.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Nishio, Mitsuhiro;Hayashida, Yuji;Saito, Katsuhiko;Tanaka, Tooru;Guo, Qixin;
10:356:12 Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates
DOI:10.1016/j.tsf.2013.04.040 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Zhang, Lei;Ji, Ziwu;Huang, Shulai;Wang, Huining;Xiao, Hongdi;Zheng, Yujun;Xu, Xiangang;Lu, Yun;Guo, Qixin;
10:356:13 ZnTe thin films grown by electrodeposition technique on Fluorine Tin Oxide substrates
DOI:10.1016/j.tsf.2014.06.002 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Skhouni, O.;El Manouni, A.;Mollar, M.;Schrebler, R.;Mari, B.;
10:356:14 Electrical determination of the diffusion barrier for gold in ZnTe
DOI:10.1063/1.4838659 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: El Akkad, Fikry;
10:356:15 ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy
DOI:10.1016/j.apsusc.2010.11.019 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Wang, X. J.;Tari, S.;Sporken, R.;Sivananthan, S.;
10:356:16 Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates
DOI:10.1016/j.materresbull.2010.12.033 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Guo, Qixin;Nada, Masaki;Ding, Yaliu;Saito, Katsuhiko;Tanaka, Tooru;Nishio, Mitsuhiro;
10:356:17 Effect of growth temperature, thermal annealing and nitrogen doping on optoelectronic properties of sputter-deposited ZnTe films
DOI:10.1016/j.tsf.2013.03.136 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Rakhshani, A. E.;
10:357:1 Narcis-like zinc oxide: Chiral ionic liquid assisted synthesis, photoluminescence and photocatalytic activity
DOI:10.1016/j.mssp.2014.01.024 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Mahjoub, Ali R.;Movahedi, Maryam;Kowsari, Elaheh;Yavari, Issa;
10:357:2 Effect of ionic liquid [C(4)mim]Cl on morphology of nanosized-zinc oxide
DOI:10.1016/j.matlet.2014.02.037 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Rabieh, Sasan;Bagheri, Mozhgan;
10:357:3 Preparation of ZnO nanopowder by a novel ultrasound assisted non-hydrolytic sol-gel process and its application in photocatalytic degradation of CI Acid Red 249
DOI:10.1016/j.powtec.2012.09.018 JN:POWDER TECHNOLOGY PY:2013
TC:16 AU: Peng, Yonggang;Ji, Junling;Zhao, Xiaoyan;Wan, Huaixin;Chen, Dajun;
10:357:4 Microwave assisted synthesis of ZnS quantum dots using ionic liquids
DOI:10.1016/j.matlet.2012.08.143 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Shahid, Robina;Gorlov, Mikhail;El-Sayed, Ramy;Toprak, Muhammet S.;Sugunan, Abhilash;Kloo, Lars;Muhammed, Mamoun;
10:357:5 Preparation, structural characterization, semiconductor and photoluminescent properties of zinc oxide nanoparticles in a phosphonium-based ionic liquid
DOI:10.1016/j.mssp.2011.01.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:8 AU: Goharshadi, Elaheh K.;Abareshi, Maryam;Mehrkhah, Roya;Samiee, Sara;Moosavi, Majid;Youssefi, Abbas;Nancarrow, Paul;
10:357:6 An efficient room-temperature route to uniform ZnO nanorods with an ionic liquid
DOI:10.1016/j.materresbull.2011.02.017 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:7 AU: Chen, Chuyan;Li, Qing;Nie, Ming;Lin, Hua;Li, Yuan;Wu, Huijie;Wang, Yiying;
10:357:7 One-step, solid-state reaction to ZnO nanoparticles in the presence of ionic liquid
DOI:10.1016/j.mssp.2011.02.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:13 AU: Li, Kangfeng;Luo, Hao;Ying, Taokai;
10:357:8 Synthesis of mordenite zeolite in absence of organic template
DOI:10.1016/j.apt.2011.10.003 JN:ADVANCED POWDER TECHNOLOGY PY:2012
TC:4 AU: Aly, Hisham M.;Moustafa, Moustafa E.;Abdelrahman, Ehab A.;
10:357:9 Ultrasound assisted synthesis of nanocrystalline zinc oxide: Experiments and modelling
DOI:10.1016/j.jallcom.2013.12.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Hosni, Mongia;Farhat, Samir;Schoenstein, Frederic;Karmous, Farah;Jouini, Noureddine;Viana, Bruno;Mgaidi, Arbi;
10:357:10 Nano sized ZnO composites: Preparation, characterization and application as photocatalysts for degradation of AB92 azo dye
DOI:10.1016/j.mssp.2013.12.023 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:12 AU: Mohaghegh, Neda;Tasviri, Mahboubeh;Rahimi, Esmail;Gholami, Mohammad Reza;
10:357:11 One-pot synthesis of supported-nanoparticle materials in ionic liquid solvents
DOI:10.1016/j.matlet.2010.09.031 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Dash, Priyabrat;Scott, Robert W. J.;
10:357:12 Alkaline-acid treated mordenite and beta zeolites featuring mesoporous dimensional uniformity
DOI:10.1016/j.matlet.2014.06.027 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Liu, Jinhuan;Cui, Liang;Wang, Liang;Ni, Xiangqian;Zhang, Shudong;Jin, Yingjie;
10:358:1 Effect of ALD surface treatment on structural and optical properties of ZnO nanorods
DOI:10.1016/j.apsusc.2013.03.133 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Jang, Jin-Tak;Ryu, Hyukhyun;Lee, Won-Jae;
10:358:2 Fast vertical growth of ZnO nanorods using a modified chemical bath deposition
DOI:10.1016/j.jallcom.2014.02.003 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Lee, Tae-hyun;Ryu, Hyukhyun;Lee, Won-Jae;
10:358:3 Vertically aligned ZnO nanorods synthesized using chemical bath deposition method on seed-layer ZnO/polyethylene naphthalate (PEN) substrates
DOI:10.1016/j.matlet.2012.09.037 JN:MATERIALS LETTERS PY:2013
TC:13 AU: Shabannia, R.;Abu-Hassan, H.;
10:358:4 One step synthesis of vertically aligned ZnO nanowire arrays with tunable length
DOI:10.1016/j.apsusc.2010.04.045 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Meng, Gang;Fang, Xiaodong;Dong, Weiwei;Tao, Ruhua;Zhao, Yiping;Deng, Zanhong;Zhou, Shu;Shao, Jingzhen;Li, Liang;
10:358:5 Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates
DOI:10.1016/j.apsusc.2011.06.078 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Jeong, Y. I.;Shin, C. M.;Heo, J. H.;Ryu, H.;Lee, W. J.;Chang, J. H.;Son, C. S.;Yun, J.;
10:358:6 ZnO nanorod growth by plasma-enhanced vapor phase transport with different growth durations
DOI:10.1116/1.4890007 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Kim, Chang-Yong;Oh, Hee-bong;Ryu, Hyukhyun;Yun, Jondo;Lee, Won-Jae;
10:358:7 Structural and optical properties of hydrothermally grown zinc oxide nanorods on polyethersulfone substrates as a function of the growth temperature and duration
DOI:10.1016/j.tsf.2011.10.006 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Shin, C. M.;Heo, J. H.;Jeong, Y. I.;Oh, H. B.;Ryu, H.;Lee, W. J.;Chang, J. H.;Kim, J. H.;Choi, H.;
10:358:8 Physical and chemical contributions of a plasma treatment in the growth of ZnO nanorods
DOI:10.1016/j.jallcom.2013.05.227 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Jang, J. T.;Ryu, H.;Lee, W. J.;Yun, J.;
10:358:9 Impact of first-step potential and time on the vertical growth of ZnO nanorods on ITO substrate by two-step electrochemical deposition
DOI:10.1016/j.jallcom.2013.07.093 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Kim, Tae Gyoum;Jang, Jin-Tak;Ryu, Hyukhyun;Lee, Won-Jae;
10:358:10 Low temperature deposition of zinc oxide nanoparticles via zinc-rich vapor phase transport and condensation
DOI:10.1016/j.jcrysgro.2010.08.062 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Trad, Tarek M.;Donley, Kyle B.;Look, David C.;Eyink, Kurt G.;Tomich, David H.;Taylor, Curtis R.;
10:359:1 Stabilization Principles for Polar Surfaces of ZnO
DOI:10.1021/nn2017606 JN:ACS NANO PY:2011
TC:48 AU: Lauritsen, Jeppe V.;Porsgaard, Soeren;Rasmussen, Morten K.;Jensen, Mona C. R.;Bechstein, Ralf;Meinander, Kristoffer;Clausen, Bjerne S.;Helveg, Stig;Wahl, Roman;Kresse, Georg;Besenbacher, Flemming;
10:359:2 Simulation of reconstructions of the polar ZnO(0001) surfaces
DOI:10.1103/PhysRevB.84.165430 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Meskine, H.;Mulheran, P. A.;
10:359:3 Hydrogen adsorption on polar ZnO(0001)-Zn: Extending equilibrium surface phase diagrams to kinetically stabilized structures
DOI:10.1103/PhysRevB.82.165418 JN:PHYSICAL REVIEW B PY:2010
TC:20 AU: Valtiner, Markus;Todorova, Mira;Neugebauer, Joerg;
10:359:4 Stabilization of ZnO polar plane with charged surface nanodefects
DOI:10.1103/PhysRevB.82.155406 JN:PHYSICAL REVIEW B PY:2010
TC:14 AU: Lai, Ju Hong;Su, Shu Hsuan;Chen, Hsin-Hsien;Huang, J. C. A.;Wu, Chung-Lin;
10:359:5 Effect of surface reconstruction on the electronic structure of ZnO(0001)
DOI:10.1103/PhysRevB.87.085445 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Pal, Sougata;Jasper-Toennies, Torben;Hack, Michael;Pehlke, Eckhard;
10:359:6 "Magic'' Vicinal Zinc Oxide Surfaces
DOI:10.1103/PhysRevLett.111.086101 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:2 AU: Zheng, Hao;Gruyters, Markus;Pehlke, Eckhard;Berndt, Richard;
10:359:7 Cu/ZnO(0001) under oxidating and reducing conditions: A first-principles survey of surface structures
DOI:10.1103/PhysRevB.84.125311 JN:PHYSICAL REVIEW B PY:2011
TC:10 AU: Warschkow, O.;Chuasiripattana, K.;Lyle, M. J.;Delley, B.;Stampfl, C.;
10:359:8 Role of hydrogen on the ZnO(000(1)over-bar)-(1x1) surface
DOI:10.1103/PhysRevB.84.075437 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Chamberlin, S. E.;Hirschmugl, C. J.;King, S. T.;Poon, H. C.;Saldin, D. K.;
10:359:9 Stabilization mechanism for the polar ZnO(000(1)over-bar)-O surface
DOI:10.1103/PhysRevB.87.085313 JN:PHYSICAL REVIEW B PY:2013
TC:8 AU: Wahl, Roman;Lauritsen, Jeppe V.;Besenbacher, Flemming;Kresse, Georg;
10:359:10 Stabilizing forces acting on ZnO polar surfaces: STM, LEED, and DFT
DOI:10.1103/PhysRevB.89.235403 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Xu, H.;Dong, L.;Shi, X. Q.;Van Hove, M. A.;Ho, W. K.;Lin, N.;Wu, H. S.;Tong, S. Y.;
10:359:11 Coverage and charge-state dependent adsorption of carbon monoxide on the zinc oxide (0001) surface
DOI:10.1103/PhysRevB.82.165401 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Lyle, M. J.;Warschkow, O.;Delley, B.;Stampfl, C.;
10:359:12 High-Pressure Phase Transition of ZnO Nanorods Using Density Functional Theory
DOI:10.1080/10584587.2014.906866 JN:INTEGRATED FERROELECTRICS PY:2014
TC:1 AU: Kotmool, Komsilp;Bovornratanaraks, Thiti;Ahuja, Rajeev;
10:360:1 A low temperature situ precipitation route to designing Zn-doped SnO2 photocatalyst with enhanced photocatalytic performance
DOI:10.1016/j.apsusc.2014.05.118 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Jia, Xiaohua;Liu, Yingying;Wu, Xiangyang;Zhang, Zhen;
10:360:2 Microstructural evolution of oxides and semiconductor thin films
DOI:10.1016/j.pmatsci.2011.02.001 JN:PROGRESS IN MATERIALS SCIENCE PY:2011
TC:32 AU: Chen, Z. W.;Jiao, Z.;Wu, M. H.;Shek, C. H.;Wu, C. M. L.;Lai, J. K. L.;
10:360:3 Synthesis of ZnO-SnO2 composite oxides by CTAB-assisted co-precipitation and photocatalytic properties
DOI:10.1016/j.apsusc.2009.11.047 JN:APPLIED SURFACE SCIENCE PY:2010
TC:23 AU: Yang, Zhijun;Lv, Linlin;Dai, Yali;Xv, Zhihui;Qian, Dong;
10:360:4 Dependence of precursor composition on patterning and morphology of sol-gel soft lithography based zinc zirconium oxide thin films
DOI:10.1016/j.apsusc.2013.01.079 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Bera, Susanta;Pal, Moumita;Sarkar, Saswati;Jana, Sunirmal;
10:360:5 Catalyst free growth of MgO nanoribbons
DOI:10.1016/j.ceramint.2013.10.139 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Das, Pradip Sekhar;Chanda, Dipak Kr.;Dey, Arjun;Mandal, Ashok K.;Das Gupta, Kajari;Dey, Nitai;Mukhopadhyay, Anoop K.;
10:360:6 Photocatalytic and bactericidal activities of hydrothermally and sonochemically prepared Fe2O3-SnO2 nanoparticles
DOI:10.1016/j.mssp.2012.12.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Karunakaran, C.;SakthiRaadha, S.;Gomathisankar, P.;
10:360:7 Influence of Mg doping level on morphology, optical, electrical properties and antibacterial activity of ZnO nanostructures
DOI:10.1016/j.ceramint.2013.12.099 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Iqbal, Javed;Jan, Tariq;Ismail, Muhammad;Ahmad, Naeem;Arif, Asim;Khan, Mohsin;Adil, M.;Sami-ul-Haq;Arshad, Aqsa;
10:360:8 Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes
DOI:10.1063/1.4876737 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Haldar, Arpita;Bera, Susanta;Jana, Sunirmal;Bhattacharya, Kallol;Chakraborty, Rajib;
10:360:9 Heterojunctions and optical properties of ZnO/SnO2 nanocomposites adorned with quantum dots
DOI:10.1016/j.solmat.2014.05.038 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:3 AU: Wang, Jian;Chen, Zhiwen;Liu, Yanyu;Shek, Chan-Hung;Wu, C. M. Lawrence;Lai, Joseph K. L.;
10:360:10 Annealing-dependent growth and nonlinear electrical properties of fractal Ge nanojoints based on Pd matrix
DOI:10.1016/j.matlet.2013.10.032 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Hou, Linggui;Liu, Peng;Chen, Zhiwen;Wang, Wenfeng;Shek, Chan-Hung;Wu, C. M. Lawrence;Lai, Joseph K. L.;
10:361:1 Sonochemically assisted synthesis and application of hollow spheres, hollow prism, and coralline-like ZnO nanophotocatalyst
DOI:10.1007/s11051-011-0255-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:23 AU: Kowsari, E.;
10:361:2 Synthesis by an ionic liquid-assisted method and optical properties of nanoflower Y2O3
DOI:10.1016/j.materresbull.2010.04.015 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:23 AU: Kowsari, E.;Faraghi, G.;
10:361:3 Ionic liquid-assisted, facile synthesis of ZnO/SnO2 nanocomposites, and investigation of their photocatalytic activity
DOI:10.1016/j.matlet.2011.10.028 JN:MATERIALS LETTERS PY:2012
TC:12 AU: Kowsari, Elaheh;Ghezelbash, Mohammad Reza;
10:361:4 Synthesis of cactus-like zincoxysulfide (ZnOxS1-x) nanostructures assisted by a task-specific ionic liquid and their photocatalytic activities
DOI:10.1016/j.matlet.2011.07.078 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Kowsari, Elaheh;Ghezelbash, Mohammad Reza;
10:361:5 Using a chiral ionic liquid for morphological evolution of BaCO3 and its radar absorbing properties as a dendritic nanofiller
DOI:10.1016/j.matlet.2012.03.022 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Kowsari, E.;Karimzadeh, A. H.;
10:361:6 Ionic liquid assisted sonochemical synthesis of NiS submicron particles
DOI:10.1016/j.mssp.2014.02.019 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: de la Parra-Arciniega, Salome M.;Garcia-Gomez, Nora A.;Garcia-Gutierrez, Domingo I.;Salinas-Estevane, Pablo;Sanchez, Eduardo M.;
10:361:7 Enhanced photocatalytic activity of ZnO/La2O3 composite modified by potassium for phenol degradation
DOI:10.1016/j.matlet.2013.09.050 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Li, Chun;Hu, Ruisheng;Qin, Liting;Ding, Ranran;Li, Xue;Wu, Haitao;
10:361:8 Fabrication of fern-like, fish skeleton-like, and butterfly-like BaO nanostructures as nanofillers for radar-absorbing nanocomposites
DOI:10.1016/j.matlet.2012.01.060 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Kowsari, E.;Karimzadeh, A. H.;
10:361:9 Electrospun PAN nanofiber process control by ionic liquids and electromagnetic wave absorbing properties
DOI:10.1016/j.matlet.2012.03.075 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Kowsari, E.;Mallakmohamadi, M.;
10:361:10 A sonochemical-assisted synthesis of spherical silica nanostructures by using a new capping agent
DOI:10.1016/j.ceramint.2013.06.029 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Masjedi-Arani, Maryam;Salavati-Niasari, Masoud;Ghanbari, Davood;Nabiyouni, Gholamreza;
10:362:1 Characterization of AZO and Ag based films prepared by RF magnetron sputtering
DOI:10.1016/j.jallcom.2014.07.105 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Miao, Dagang;Jiang, Shouxiang;Zhao, Hongmei;Shang, Songmin;Chen, Zhuoming;
10:362:2 Effect of heat treatment on infrared reflection property of Al-doped ZnO films
DOI:10.1016/j.solmat.2014.04.030 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:9 AU: Miao, Dagang;Jiang, Shouxiang;Shang, Songmin;Chen, Zhuoming;
10:362:3 Third harmonic generation process in Al doped ZnO thin films
DOI:10.1016/j.jallcom.2013.08.134 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Abd-Lefdil, M.;Douayar, A.;Belayachi, A.;Reshak, A. H.;Fedorchuk, A. O.;Pramodini, S.;Poornesh, P.;Nagaraja, K. K.;Nagaraja, H. S.;
10:362:4 Fabrication of nanowires of Al-doped ZnO using nanoparticle assisted pulsed laser deposition (NAPLD) for device applications
DOI:10.1016/j.jallcom.2013.09.046 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:8 AU: Rajan, S. Thanka;Subramanian, B.;Kumar, A. K. Nanda;Jayachandran, M.;Rao, M. S. Ramachandra;
10:362:5 Enhanced H-2 sensitivity at room temperature of ZnO nanowires functionalized by Pd nanoparticles
DOI:10.1063/1.3647310 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:15 AU: Ren, Shoutian;Fan, Guanghua;Qu, Shiliang;Wang, Qiang;
10:362:6 Infrared and microwave shielding of transparent Al-doped ZnO superlattice grown via atomic layer deposition
DOI:10.1007/s10853-012-7043-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:7 AU: Fernandes, Gustavo E.;Lee, Do-Joong;Kim, Jin Ho;Kim, Ki-Bum;Xu, Jimmy;
10:362:7 Near-infrared reflection from periodically aluminium-doped zinc oxide thin films
DOI:10.1016/j.tsf.2010.11.007 JN:THIN SOLID FILMS PY:2011
TC:18 AU: Okuhara, Yoshiki;Kato, Takeharu;Matsubara, Hideaki;Isu, Norifumi;Takata, Masasuke;
10:362:8 Pd nanoparticles formation by femtosecond laser irradiation and the nonlinear optical properties at 532 nm using nanosecond laser pulses
DOI:10.1063/1.3533738 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:16 AU: Fan, Guanghua;Qu, Shiliang;Wang, Qiang;Zhao, Chongjun;Zhang, Lei;Li, Zhongguo;
10:363:1 p-Type NiZnO thin films grown by photo-assist metal-organic chemical vapor deposition
DOI:10.1016/j.jallcom.2013.04.192 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Wang, Jin;Dong, Xin;Zhang, Baolin;Zhang, Yuantao;Wang, Hui;Shi, Zhifeng;Zhang, Shikai;Yin, Wei;Du, Guotong;
10:363:2 Gold-Catalyzed Growth of Aluminium-Doped Zinc Oxide Nanorods by Sputtering Method
DOI:10.1155/2014/672047 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Rosli, A. B.;Marbie, M. M.;Herman, S. H.;Ani, M. H.;
10:363:3 Effect of nickel doping on physical properties of zinc oxide thin films prepared by the spray pyrolysis method
DOI:10.1016/j.apsusc.2014.02.045 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Jlassi, M.;Sta, I.;Hajji, M.;Ezzaouia, H.;
10:363:4 On the electrical conductivity and photocatalytic activity of aluminum-doped zinc oxide
DOI:10.1016/j.powtec.2013.12.001 JN:POWDER TECHNOLOGY PY:2014
TC:2 AU: Zhang, P.;Hong, R. Y.;Chen, Q.;Feng, W. G.;
10:363:5 Characteristics of aluminum-doped zinc oxide films with oxygen plasma treatment for solar cell applications
DOI:10.1016/j.tsf.2013.05.065 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Park, Yong Seob;Seo, Munsoo;Yi, Junsin;Lim, Donggun;Lee, Jaehyeong;
10:363:6 In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system
DOI:10.1063/1.4795525 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Lin, Chun-Cheng;Chang, Chia-Chiang;Wu, Chin-Jyi;Tseng, Zong-Liang;Tang, Jian-Fu;Chu, Sheng-Yuan;Chen, Yi-Chun;Qi, Xiaoding;
10:363:7 Electron hopping interactions in amorphous ZnO films probed by x-ray absorption near edge structure analysis
DOI:10.1063/1.3596701 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Cho, Deok-Yong;Kim, Jeong Hwan;Hwang, Cheol Seong;
10:363:8 Local electronic structure of ZnO nanorods grown by radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2013.11.034 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Venkatesh, P. Sundara;Dong, C. L.;Chen, C. L.;Pong, W. F.;Asokan, K.;Jeganathan, K.;
10:363:9 Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide
DOI:10.1016/j.tsf.2013.09.060 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Johnson, Kyle W.;Guruvenket, Srinivasan;Sailer, Robert A.;Ahrenkiel, S. Phillip;Schulz, Douglas L.;
10:363:10 Nanostructured ZnO films with various morphologies prepared by ultrasonic spray pyrolysis and its growing process
DOI:10.1016/j.apsusc.2013.07.060 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Ma, H. L.;Liu, Z. W.;Zeng, D. C.;Zhong, M. L.;Yu, H. Y.;Mikmekova, E.;
10:364:1 The Transparent Conductive Properties of Manganese-Doped Zinc Oxide Films Deposited by Chemical Bath Deposition
DOI:10.1007/s11664-011-1770-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:6 AU: Fang, J. S.;Luo, W. H.;Hsu, C. H.;Yang, J. C.;Tsai, T. K.;
10:364:2 Tuning the combined magnetic and antibacterial properties of ZnO nanopowders through Mn doping for biomedical applications
DOI:10.1016/j.jmmm.2014.01.008 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:9 AU: Ravichandran, K.;Karthika, K.;Sakthivel, B.;Begum, N. Jabena;Snega, S.;Swaminathan, K.;Senthamilselvi, V.;
10:364:3 Effect of dopant concentration on the structural, electrical and optical properties of Mn-doped ZnO films
DOI:10.1016/j.tsf.2011.01.132 JN:THIN SOLID FILMS PY:2011
TC:16 AU: Ruan, H. B.;Fang, L.;Li, D. C.;Saleem, M.;Qin, G. P.;Kong, C. Y.;
10:364:4 Synthesis and characterization of Mn-doped ZnO column arrays
DOI:10.1016/j.apsusc.2010.01.125 JN:APPLIED SURFACE SCIENCE PY:2010
TC:13 AU: Yang, Mei;Guo, Zhixing;Qiu, Kehui;Long, Jianping;Yin, Guangfu;Guan, Denggao;Liu, Sutian;Zhou, Shijie;
10:364:5 Structural and magnetic properties of Zn1-xMnxO nanocrystalline powders and thin films
DOI:10.1016/j.tsf.2012.10.053 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Mera, J.;Cordoba, C.;Doria, J.;Gomez, A.;Paucar, C.;Fuchs, D.;Moran, O.;
10:364:6 Effect of sol-layers on Sb-doped SnO2 thin films as solution-based transparent conductive oxides
DOI:10.1016/j.ceramint.2013.06.013 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: An, Ha-Rim;Kim, ChangYeoul;Oh, Sung-Tag;Ahn, Hyo-Jin;
10:364:7 Ferromagnetic and optical behaviors observed in Mn-doped ZnO-based thin films
DOI:10.1016/j.tsf.2013.04.082 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Zhang, Yu-Jun;Luo, Yi-Dong;Lin, Yuan-Hua;Nan, Ce-Wen;
10:364:8 Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition
DOI:10.1016/j.mseb.2012.05.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:4 AU: Aravind, Arun;Jayaraj, M. K.;Kumar, Mukesh;Chandra, Ramesh;
10:364:9 Synthesis of Mn doped ZnO nanocrystals by solvothermal route and its characterization
DOI:10.1016/j.matchemphys.2010.09.029 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:7 AU: Vethanathan, S. John Kennady;Brightson, M.;Sundar, S. Meenakshi;Perumal, S.;
10:364:10 No ferromagnetic properties in polycrystalline Al-doped Zn0.97Mn0.03O diluted magnetic semiconductor
DOI:10.1016/j.tsf.2009.12.028 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Brihi, N.;Bouaine, A.;Berbadj, A.;Schmerber, G.;Colis, S.;Dinia, A.;
10:364:11 Room temperature paramagnetism of ZnO:Mn films grown by RF-sputtering
DOI:10.1016/j.tsf.2009.12.043 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Oliveira, F.;Cerqueira, M. F.;Vasilevskiy, M. I.;Viseu, T.;de Campos, J. Ayres;Rolo, A. G.;Martins, J. S.;Sobolev, N. A.;Alves, E.;
10:364:12 Tunable Band Gap Energy of Mn-Doped ZnO Nanoparticles Using the Coprecipitation Technique
DOI:10.1155/2014/371720 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Tan, Tong Ling;Lai, Chin Wei;Abd Hamid, Sharifah Bee;
10:364:13 Optical and ferromagnetic characteristics of Mn doped ZnO thin films grown by filtered cathodic vacuum arc technique
DOI:10.1016/j.tsf.2010.06.062 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Liang, H. K.;Yu, S. F.;Lau, S. P.;Herng, T. S.;Tsang, S. H.;Wang, L.;Chen, J. S.;Teng, K. S.;
10:365:1 Effects of Annealing Atmosphere and Temperature on Properties of ZnO Thin Films on Porous Silicon Grown by Plasma-Assisted Molecular Beam Epitaxy
DOI:10.1007/s13391-012-1089-z JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:10 AU: Kim, Min Su;Kim, Tae Hoon;Kim, Do Yoeb;Lee, Dong-Yul;Kim, Sung-O;Leem, Jae-Young;
10:365:2 Atmospheric Pressure Based Electrostatic Spray Deposition of Transparent Conductive ZnO and Al-Doped ZnO (AZO) Thin Films: Effects of Al Doping and Annealing Treatment
DOI:10.1007/s13391-012-2188-6 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:10 AU: Mahmood, Khalid;Park, Seung Bin;
10:365:3 Relationship between Crystal Structure and Photoluminescence Properties of ZnO Films Formed by Oxidation of Metallic Zn
DOI:10.3365/eml.2010.12.155 JN:ELECTRONIC MATERIALS LETTERS PY:2010
TC:8 AU: Lee, Geun-Hyoung;
10:365:4 F-doped ZnO by sol-gel spin-coating as a transparent conducting thin film
DOI:10.1007/s13391-011-0607-8 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:14 AU: Nam, Gil Mo;Kwon, Myoung Seok;
10:365:5 Enhancement of Band Gap of ZnO Nanocrystalline Films at a Faster Rate Using Sr Dopant
DOI:10.1007/s13391-014-3131-9 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Srivastava, Anchal;Kumar, Nishant;Misra, Kamakhya Prakash;Khare, Sanjay;
10:365:6 Influence of grain size on the properties of AlN doped ZnO thin film
DOI:10.1016/j.mssp.2011.01.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:6 AU: Bhuvana, K. P.;Elanchezhiyan, J.;Gopalakrishnan, N.;Balasubramanian, T.;
10:365:7 Temperature Dependence of the Growth of ZnO Nanorod Arrays by Electrochemical Deposition
DOI:10.1007/s13391-011-0309-2 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:14 AU: Kim, Hyunghoon;Moon, Jin Young;Lee, Ho Seong;
10:365:8 Transparent non-volatile memory device using silicon quantum dots
DOI:10.1007/s13391-013-0028-y JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:4 AU: Park, Nae-Man;Shin, Jaeheon;Kim, Bosul;Kim, Kyung Hyun;Cheong, Woo-Seok;
10:365:9 Effect of solution concentration on the functional properties of ZnO nanostructures: Role of Hexamethylenetetramine
DOI:10.1007/s13391-013-2223-2 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:5 AU: Heo, Si Nae;Park, Keun Young;Seo, Yong Jun;Ahmed, Faheem;Anwar, M. S.;Koo, Bon Heun;
10:365:10 Electron backscatter diffraction analysis of ZnO:Al thin films
DOI:10.1016/j.apsusc.2012.07.081 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Garcia, C. B.;Ariza, E.;Tavares, C. J.;Villechaise, P.;
10:365:11 Growth temperature dependent properties of ZnO nanorod arrays on glass substrate prepared by wet chemical method
DOI:10.1016/j.ceramint.2013.10.134 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Heo, Si Nae;Ahmed, Faheem;Koo, Bon Heun;
10:365:12 A Facile Method for Patterned Growth of ZnO Nanowires Using a Black Ink
DOI:10.1007/s13391-012-2047-5 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:6 AU: Lee, Sang Hyun;Lee, Hyun Jung;Shiku, Hitoshi;Yao, Takafumi;Matsue, Tomokazu;
10:365:13 Rapid synthesis of ZnO dandelion-like nanostructures and their applications in humidity sensing and photocatalysis
DOI:10.1016/j.mssp.2013.09.019 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Hsu, Nai-Feng;Chang, Ming;Hsu, Kuei-Ting;
10:366:1 Temperature-dependent electron transport in ZnO micro/nanowires
DOI:10.1063/1.4759311 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Li, Xin;Qi, Junjie;Zhang, Qi;Zhang, Yue;
10:366:2 Photoluminescence and field emission properties of Sn-doped ZnO microrods
DOI:10.1016/j.apsusc.2009.12.034 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Li, Lijun;Yu, Ke;Wang, Yang;Zhu, Ziqiang;
10:366:3 Hysteretic I-V nature of ethanol adsorbed ZnO nanorods
DOI:10.1016/j.matlet.2013.04.103 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Kathalingam, A.;Rhee, Jin-Koo;
10:366:4 Bascule nanobridges self-assembled with ZnO nanowires as double Schottky barrier UV switches
DOI:10.1088/0957-4484/21/29/295502 JN:NANOTECHNOLOGY PY:2010
TC:29 AU: Li, Yanbo;Paulsen, Alexander;Yamada, Ichiro;Koide, Yasuo;Delaunay, Jean-Jacques;
10:366:5 Synthesis of tin-doped zinc oxide microrods for gas sensor application
DOI:10.1016/j.matlet.2013.06.082 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Zhang, Ning;Yu, Ke;Li, Lijun;Zhu, Ziqiang;
10:366:6 Negative differential resistance in ZnO nanowires induced by surface state modulation
DOI:10.1016/j.matchemphys.2011.09.036 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Zhang, Qi;Qi, Junjie;Huang, Yunhua;Li, Xin;Zhang, Yue;
10:366:7 High ethanol sensitivity of Palladium/TiO2 nanobelt surface heterostructures dominated by enlarged surface area and nano-Schottky junctions
DOI:10.1016/j.jcis.2012.08.034 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:11 AU: Wang, Dongzhou;Zhou, Weijia;Hu, Peiguang;Guan, Yu;Chen, Limei;Li, Jianhua;Wang, Guancong;Liu, Hong;Wang, Jiyang;Cao, Guozhong;Jiang, Huaidong;
10:366:8 Controlled synthesis of defects-containing ZnO by the French process modified with pulsed injection and its luminescence properties
DOI:10.1016/j.ceramint.2011.03.001 JN:CERAMICS INTERNATIONAL PY:2011
TC:1 AU: Charnhattakorn, Busarakam;Charinpanitkul, Tawatchai;Sirisuk, Akawat;Pavarajarn, Varong;
10:366:9 Structural inhomogeneity and piezoelectric enhancement in ZnO nanobelts
DOI:10.1007/s00339-012-7081-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:5 AU: Momeni, Kasra;Asthana, Anjana;Prasad, Abhishek;Yap, Yoke K.;Shahbazian-Yassar, Reza;
10:367:1 Plasmonic transparent conducting metal oxide nanoparticles and nanoparticle films for optical sensing applications
DOI:10.1016/j.tsf.2013.04.145 JN:THIN SOLID FILMS PY:2013
TC:16 AU: Ohodnicki, Paul R., Jr.;Wang, Congjun;Andio, Mark;
10:367:2 Effects of Deposition Temperature on the Electrochemical Deposition of Zinc Oxide Thin Films from a Chloride Solution
DOI:10.2320/matertrans.M2013386 JN:MATERIALS TRANSACTIONS PY:2014
TC:0 AU: Hori, Shigeo;Suzuki, Toshimasa;Suzuki, Tsukasa;Miura, Shuhei;Nonomura, Shuichi;
10:367:3 Zinc oxide-based thin film functional layers for chemiresistive sensors
DOI:10.1016/j.tsf.2012.07.016 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Miller, James B.;Ashok, Tejasvi;Lee, Sojung;Broitman, Esteban;
10:367:4 In-situ and ex-situ characterization of TiO2 and Au nanoparticle incorporated TiO2 thin films for optical gas sensing at extreme temperatures
DOI:10.1063/1.3695380 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:16 AU: Ohodnicki, Paul R., Jr.;Wang, Congjun;Natesakhawat, Sittichai;Baltrus, John P.;Brown, Thomas D.;
10:367:5 Microstructural evolution of sol-gel derived ZnO thin films
DOI:10.1016/j.tsf.2010.06.032 JN:THIN SOLID FILMS PY:2010
TC:16 AU: Miller, James B.;Hsieh, Hsin-Jung;Howard, Bret H.;Broitman, Esteban;
10:367:6 Characterization of optical, chemical, and structural changes upon reduction of sol-gel deposited SnO2 thin films for optical gas sensing at high temperatures
DOI:10.1016/j.tsf.2012.05.023 JN:THIN SOLID FILMS PY:2012
TC:13 AU: Ohodnicki, Paul R., Jr.;Natesakhawat, Sittichai;Baltrus, John P.;Howard, Bret;Brown, Thomas D.;
10:367:7 Process optimization of Al-doped zinc oxide films as a window layer for Cu(In,Ga)Se-2 thin film solar cells
DOI:10.1016/j.apsusc.2013.07.108 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Li, Zhao-Hui;Kwon, Sang Jik;
10:367:8 Optical gas sensing responses in transparent conducting oxides with large free carrier density
DOI:10.1063/1.4890011 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:7 AU: Ohodnicki, P. R., Jr.;Andio, M.;Wang, C.;
10:367:9 Template-guided self-ordering of wrinkled ZnO microstructures
DOI:10.1016/j.scriptamat.2009.11.014 JN:SCRIPTA MATERIALIA PY:2010
TC:4 AU: Lee, J. C.;Hon, M. H.;Leu, I. C.;
10:367:10 Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications
DOI:10.1016/j.apsusc.2010.06.073 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Yang, Yanyan;Zeng, Xiangbin;Zeng, Yu;Liu, Luo;Chen, Qiankun;
10:368:1 Photoluminescence and Raman Scattering in Ag-doped ZnO Nanoparticles
DOI:10.1063/1.3530631 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:45 AU: Sanchez Zeferino, R.;Barboza Flores, M.;Pal, U.;
10:368:2 Effects of aluminium doping on structural and photoluminescence properties of ZnO nanoparticles
DOI:10.1016/j.ceramint.2013.08.055 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Srinet, Gunjan;Kumar, Ravindra;Sajal, Vivek;
10:368:3 Optical, structural, enhanced local vibrational and fluorescence properties in K-doped ZnO nanostructures
DOI:10.1007/s00339-013-8139-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Bharathi, V.;Sivakumar, M.;Udayabhaskar, R.;Takebe, Hiromichi;Karthikeyan, B.;
10:368:4 Optical and phonon properties of ZnO:CuO mixed nanocomposite
DOI:10.1063/1.4870447 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Udayabhaskar, R.;Karthikeyan, B.;
10:368:5 Cr doping induced structural, phonon and excitonic properties of ZnO nanoparticles
DOI:10.1007/s11051-011-0647-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:18 AU: Pandiyarajan, T.;Karthikeyan, B.;
10:368:6 Role of Fe doping on structural and vibrational properties of ZnO nanostructures
DOI:10.1007/s00339-011-6755-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:16 AU: Pandiyarajan, T.;Udayabhaskar, R.;Karthikeyan, B.;
10:368:7 A possibility to obtain room temperature ferromagnetism by transition metal doping of ZnO nanoparticles
DOI:10.1063/1.3329457 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Wesselinowa, J. M.;Apostolov, A. T.;
10:368:8 Theory of the phonon properties of pure and ion-doped ZnO nanoparticles
DOI:10.1063/1.3467530 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Wesselinowa, J. M.;Apostolov, A. T.;
10:368:9 Effect of high manganese substitution at ZnO host lattice using solvothermal method: Structural characterization and properties
DOI:10.1016/j.matchemphys.2012.12.013 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:3 AU: Khatoon, Sarvari;Wani, Irshad A.;Ahmed, Jahangeer;Magdaleno, Travis;Al-Hartomy, Omar A.;Ahmad, Tokeer;
10:369:1 Structural, Optical, Electrical, and Photoresponse Properties of Postannealed Sn-Doped ZnO Nanorods
DOI:10.1155/2013/792930 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Humayun, Q.;Kashif, M.;Hashim, U.;
10:369:2 Area-Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV Sensing
DOI:10.1155/2013/301674 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:3 AU: Humayun, Q.;Kashif, M.;Hashim, U.;
10:369:3 Effect of Different Seed Solutions on the Morphology and Electrooptical Properties of ZnO Nanorods
DOI:10.1155/2012/452407 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:6 AU: Kashif, M.;Hashim, U.;Ali, M. E.;Ali, Syed M. Usman;Rusop, M.;Ibupoto, Z. H.;Willander, Magnus;
10:369:4 Morphological, Structural, and Electrical Characterization of Sol-Gel-Synthesized ZnO Nanorods
DOI:10.1155/2013/478942 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:3 AU: Kashif, M.;Hashim, U.;Ali, M. E.;Foo, K. L.;Ali, Syed M. Usman;
10:369:5 Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots
DOI:10.1016/j.apsusc.2010.01.041 JN:APPLIED SURFACE SCIENCE PY:2010
TC:9 AU: Zhang, Xiangqiang;Hou, Shili;Mao, Huibing;Wang, Jiqing;Zhu, Ziqiang;
10:369:6 Synthesis and optical properties of Pr3+-doped ZnO quantum dots
DOI:10.1016/j.jnoncrysol.2013.04.028 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2014
TC:2 AU: Li, Hong;Luo, Kaifei;Xia, Mengling;Wang, Paul W.;
10:369:7 Influence of Annealing on Properties of Spray Deposited ZnO Thin Films
DOI:10.1155/2013/146382 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:3 AU: Nadarajah, Kalyani;Chee, Ching Yern;Tan, Chou Yong;
10:369:8 Strong UV intensity enhancement in ZnO nanorods via surface modification of formic acid
DOI:10.1016/j.mssp.2013.07.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:0 AU: Liu, Wenyan;Wang, Haiyan;Qi, Lijing;Yang, Lili;
10:369:9 Investigation of the effect of annealing on the photoluminescence properties of ZnO nanoparticles, synthesized at low temperature
DOI:10.1016/j.optmat.2012.10.047 JN:OPTICAL MATERIALS PY:2013
TC:4 AU: Orimi, R. Lotfi;
10:369:10 Preparation of n-ZnO/p-Si solar cells by oxidation of zinc nanoparticles: effect of oxidation temperature on the photovoltaic properties
DOI:10.1007/s00339-014-8605-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Ismail, Raid A.;Al-Jawad, Selma M. H.;Hussein, Naba;
10:369:11 Effect of annealing temperature on ZnO:Al/p-Si heterojunctions
DOI:10.1016/j.tsf.2012.04.044 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Baydogan, N.;Karacasu, O.;Cimenoglu, H.;
10:369:12 Effect of the substrate on the properties of ZnO-MgO thin films grown by atmospheric pressure metal-organic chemical vapor deposition
DOI:10.1016/j.tsf.2011.03.030 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Torres-Huerta, A. M.;Dominguez-Crespo, M. A.;Brachetti-Sibaja, S. B.;Arenas-Alatorre, J.;Rodriguez-Pulido, A.;
10:370:1 Effects of substrate parameters on structure and optical properties of ZnO thin films fabricated by pulsed laser deposition
DOI:10.1016/j.mseb.2009.10.029 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:25 AU: Wei, X. Q.;Huang, J. Z.;Zhang, M. Y.;Du, Y.;Man, B. Y.;
10:370:2 Structural reconstruction and defects transition in mediating room temperature ferromagnetism in Co-doped ZnO film
DOI:10.1063/1.4799641 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Chen, B.;Yu, Q. X.;Gao, Q. Q.;Liao, Y.;Wang, G. Z.;
10:370:3 Microstructure and physical properties of sol gel derived SnO2:Sb thin films for optoelectronic applications
DOI:10.1016/j.apsusc.2013.02.109 JN:APPLIED SURFACE SCIENCE PY:2013
TC:20 AU: Lekshmy, S. Sujatha;Daniel, Georgi P.;Joy, K.;
10:370:4 Room temperature ferromagnetism in Co doped ZnO within an optimal doping level of 5%
DOI:10.1016/j.materresbull.2012.02.046 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:12 AU: Mohapatra, J.;Mishra, D. K.;Mishra, Debabrata;Perumal, A.;Medicherla, V. R. R.;Phase, D. M.;Singh, S. K.;
10:370:5 Effects of Substrate Temperature on the Microstructure and Morphology of CdZnTe Thin Films
DOI:10.1007/s11664-014-3371-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Malkas, Hasan;Kaya, Senol;Yilmaz, Ercan;
10:370:6 Influence of annealing on structural, morphological, compositional and surface properties of magnetron sputtered nickel-titanium thin films
DOI:10.1016/j.apsusc.2013.05.159 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Sharma, S. K.;Mohan, S.;
10:370:7 Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition
DOI:10.1016/j.materresbull.2014.04.070 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Wan, Zhixin;Kwack, Won-Sub;Lee, Woo-Jae;Jang, Seung-II;Kim, Hye-Ri;Kim, Jin-Woong;Jung, Kang-Won;Min, Won-Ja;Yu, Kyu-Sang;Park, Sung-Hun;Yun, Eun-Young;Kim, Jin-Hyock;Kwon, Se-Hun;
10:370:8 Effect of substrate temperature on the morphology, structural and optical properties of Zn1-xCoxO thin films
DOI:10.1016/j.apsusc.2010.11.057 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Yang, S. Y.;Man, B. Y.;Liu, M.;Chen, C. S.;Gao, X. G.;Wang, C. C.;Hu, B.;
10:370:9 Surface morphology and depth profile study of Cd1-xZnxTe alloy nanostructures
DOI:10.1016/j.jallcom.2012.08.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Yilmaz, Ercan;Tugay, Evrin;Aktag, Aliekber;Yildiz, Ilker;Parlak, Mehmet;Turan, Rasit;
10:370:10 Microstructure and magnetic properties of Co-doped ZnO films deposited by gas flow sputtering
DOI:10.1016/j.mseb.2010.02.006 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Sakuma, H.;Watanabe, Y.;Aramaki, K.;Yun, K. S.;Ishii, K.;Ikeda, Y.;Kondo, H.;
10:371:1 Synthesis and characteristics of Li-doped ZnO powders for p-type ZnO
DOI:10.1016/j.jallcom.2010.05.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:28 AU: Wang, Bing;Tang, Lidan;Qi, Jingang;Du, Huiling;Zhang, Zhenbin;
10:371:2 Sol-gel-hydrothermal synthesis and conductive properties of Al-doped ZnO nanopowders with controllable morphology
DOI:10.1016/j.jallcom.2013.10.241 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Chen, Zhiwu;Zhan, Guanghui;Wu, Yongpeng;He, Xinhua;Lu, Zhenya;
10:371:3 Synthesis of Na-doped ZnO nanowires and their antibacterial properties
DOI:10.1016/j.powtec.2010.09.003 JN:POWDER TECHNOLOGY PY:2011
TC:13 AU: Wu, Changle;Shen, Li;Huang, Qingli;Zhang, Yong-Cai;
10:371:4 Large scale preparation of urchin like Li doped ZnO using simple radio frequency chemical vapor synthesis
DOI:10.1016/j.matlet.2013.02.105 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Qian, Lei;Liu, Zhen;Mo, Yan;Yuan, Hongyan;Xiao, Dan;
10:371:5 Opto-electrical characterization of transparent conducting sand dune shaped indium doped ZnO nanostructures
DOI:10.1016/j.jallcom.2013.01.160 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Shelke, Vrushali;Bhole, M. P.;Patil, D. S.;
10:371:6 Effect of sublayer surface treatments on ZnO transparent conductive oxides using dc magnetron sputtering
DOI:10.1016/j.tsf.2009.09.198 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Imanishi, Yasuo;Taguchi, Mitsuo;Onisawa, Ken-ichi;
10:371:7 Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission
DOI:10.1039/c2jm31391j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:6 AU: Chalker, Paul R.;Marshall, Paul A.;King, Peter J.;Dawson, Karl;Romani, Simon;Williams, Paul A.;Ridealgh, John;Rosseinsky, Matthew J.;
10:371:8 Structural and luminescence properties of pure and Al-doped ZnO nanopowders
DOI:10.1016/j.mseb.2012.04.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:5 AU: Louiza, Arab;Saliha, Hamdelou;Sofiane, Harouni;Kamel, Guergouri;Lakhder, Guerbous;
10:371:9 Effects of reaction time on the morphological, structural, and gas sensing properties of ZnO nanostructures
DOI:10.1016/j.mssp.2013.10.028 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Hussain, Shahid;Liu, Tianmo;Kashif, M.;Lin, Liyang;Wu, Shufang;Guo, Weiwei;Zeng, Wen;Hashim, U.;
10:371:10 An Investigation of the Electrical Properties and Microstructure of Li-Doped ZnO Ceramics
DOI:10.1080/10584587.2012.741916 JN:INTEGRATED FERROELECTRICS PY:2012
TC:0 AU: Jun, Min-Chul;Koh, Jung-Hyuk;
10:372:1 Synthesis of wurtzite ZnS nanoparticles using the microwave assisted solvothermal method
DOI:10.1016/j.jallcom.2012.12.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:22 AU: La Porta, Felipe A.;Ferrer, Mateus M.;de Santana, Yuri V. B.;Raubach, Cristiane W.;Longo, Valeria M.;Sambrano, Julio R.;Longo, Elson;Andres, Juan;Li, Maximo S.;Varela, Jose A.;
10:372:2 A DFT Study of Structural and Electronic Properties of ZnS Polymorphs and its Pressure-Induced Phase Transitions
DOI:10.1111/jace.13191 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:3 AU: La Porta, Felipe A.;Gracia, Lourdes;Andres, Juan;Sambrano, Julio R.;Varela, Jose A.;Longo, Elson;
10:372:3 Facile hydrothermal synthesis of Mn doped ZnS nanocrystals and luminescence properties investigations
DOI:10.1016/j.jallcom.2013.06.061 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:8 AU: Pan, Qiwen;Yang, Dandan;Zhao, Yi;Ma, Zhijun;Dong, Guoping;Qiu, Jianrong;
10:372:4 Synthesis of wurtzite ZnS nanorods by microwave assisted chemical route
DOI:10.1016/j.matlet.2011.08.082 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Navaneethan, M.;Archana, J.;Nisha, K. D.;Ponnusamy, S.;Arivanandhan, M.;Hayakawa, Y.;Muthamizhchelvan, C.;
10:372:5 Size-Dependent Photoionization in Single CdSe/ZnS Nanocrystals
DOI:10.1021/nl402607a JN:NANO LETTERS PY:2013
TC:7 AU: Early, Kevin T.;Nesbitt, David J.;
10:372:6 Phase and morphology controlled synthesis of high-quality ZnS nanocrystals
DOI:10.1016/j.matlet.2010.10.061 JN:MATERIALS LETTERS PY:2011
TC:7 AU: Hou, Li;Gao, Faming;
10:372:7 Photoluminescence properties of Zn0.9Mg0.1S phosphors doped by europium and manganese ions
DOI:10.1016/j.jallcom.2012.11.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Liang, Yujun;Wu, Jiamin;Yu, Dongyan;Li, Guogang;
10:372:8 UV-Visible spectroscopic study of ZnS nanostructures synthesized by a novel micellar method
DOI:10.1007/s10853-011-6122-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:2 AU: Goswami, Navendu;Sen, P.;
10:372:9 Size-Dependent Photoionization in Single CdSe/ZnS Nanocrystals (vol 13, pg 4844, 2013)
DOI:10.1021/nl501734g JN:NANO LETTERS PY:2014
TC:0 AU: Early, Kevin T.;Nesbitt, David J.;
10:373:1 Lattice deformation of wurtzite MgxZn1-xO alloys: An extended X-ray absorption fine structure study
DOI:10.1016/j.jallcom.2013.08.021 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Zheng, Wei;Feng, Zhe Chuan;Lee, Jyh-Fu;Wuu, Dong-Sing;Zheng, Rui Sheng;
10:373:2 Ab initio description of heterostructural alloys: Thermodynamic and structural properties of MgxZn1-xO and CdxZn1-xO
DOI:10.1103/PhysRevB.81.245210 JN:PHYSICAL REVIEW B PY:2010
TC:15 AU: Schleife, A.;Eisenacher, M.;Roedl, C.;Fuchs, F.;Furthmueller, J.;Bechstedt, F.;
10:373:3 p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jallcom.2010.05.148 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:15 AU: Liu, W. W.;Yao, B.;Li, Y. F.;Li, B. H.;Zhang, Z. Z.;Shan, C. X.;Zhang, J. Y.;Shen, D. Z.;Fan, X. W.;
10:373:4 Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method
DOI:10.1063/1.3485600 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Sawai, Y.;Hazu, K.;Chichibu, S. F.;
10:373:5 Structural, elastic, and polarization parameters and band structures of wurtzite ZnO and MgO
DOI:10.1063/1.4757023 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Jang, S-H;Chichibu, S. F.;
10:373:6 Nonlinear characteristics of structural properties and spontaneous polarization in wurtzite MgxZn1-xO: A first-principles study
DOI:10.1103/PhysRevB.88.075203 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Shimada, Kazuhiro;Takahashi, Naomichi;Nakagawa, Yoshiaki;Hiramatsu, Tomoyasu;Kato, Hitoshi;
10:373:7 Preparation of Na delta-doped p-type ZnO thin films by pulsed laser deposition using NaF and ZnO ceramic targets
DOI:10.1016/j.tsf.2013.05.133 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Liu, H. B.;Pan, X. H.;Huang, J. Y.;He, H. P.;Ye, Z. Z.;
10:373:8 Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped MgxZn1-xO thin films prepared by the plasma-assisted reactive evaporation method
DOI:10.1016/j.tsf.2014.02.091 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Abe, Takami;Nakagawa, Akira;Nakagawa, Michiko;Chiba, Tetsuya;Takahashi, Shuzo;Kashiwaba, Yasuhiro;Chiba, Shigeki;Ojima, Tsutomu;Aota, Katsumi;Daibo, Masahiro;Osada, Hiroshi;Fujiwara, Tamiya;Niikura, Ikuo;Kashiwaba, Yasube;Tsutsumi, Kouichi;Suzuki, Michio;
10:373:9 Characterization of MgxZn1 (-) O-x thin films grown on sapphire substrates by metalorganic chemical vapor deposition
DOI:10.1016/j.tsf.2010.10.036 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Wu, C. C.;Wuu, D. S.;Lin, P. R.;Chen, T. N.;Horng, R. H.;Ou, S. L.;Tu, Y. L.;Wei, C. C.;Feng, Z. C.;
10:374:1 Self-Powered UV-vis Photodetector Based on ZnIn2S4/Hydrogel Interface
DOI:10.1021/am4025356 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:5 AU: Mandal, Lily;Chaudhari, Nilima S.;Ogale, Satishchandra;
10:374:2 A Quasi-Liquid Iontronic-Electronic Light-Harvesting Hybrid Photodetector with Giant Response
DOI:10.1002/adma.201200613 JN:ADVANCED MATERIALS PY:2012
TC:10 AU: Mandal, Lily;Deo, Meenal;Yengantiwar, Ashish;Banpurkar, Arun;Jog, Jyoti;Ogale, Satishchandra;
10:374:3 Ion-Current Diode with Aqueous Gel/SiO2 Nanofilm Interfaces
DOI:10.1002/smll.200902069 JN:SMALL PY:2010
TC:18 AU: Koo, Hyung-Jun;Chang, Suk Tai;Velev, Orlin D.;
10:374:4 Aqueous soft matter based photovoltaic devices
DOI:10.1039/c0jm01820a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:22 AU: Koo, Hyung-Jun;Chang, Suk Tai;Slocik, Joseph M.;Naik, Rajesh R.;Velev, Orlin D.;
10:374:5 Biomimetic photocatalytic reactor with a hydrogel-embedded microfluidic network
DOI:10.1039/c3ta12483e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:4 AU: Koo, Hyung-Jun;Velev, Orlin D.;
10:374:6 Electric field induced reversible control of visible photoluminescence from ZnO nanoparticles
DOI:10.1063/1.3578194 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Ghosh, Manoranjan;Raychaudhuri, A. K.;
10:375:1 Fast production of ZnO nanorods by arc discharge in de-ionized water and applications in dye-sensitized solar cells
DOI:10.1016/j.jallcom.2013.10.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:8 AU: Sonmezoglu, S.;Eskizeybek, V.;Toumiat, A.;Avci, A.;
10:375:2 ZnO-TiO2 nanocomposites formed under submerged DC arc discharge: preparation, characterization and photocatalytic properties
DOI:10.1007/s00339-013-8194-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Avci, Ahmet;Eskizeybek, Volkan;Gulce, Handan;Haspulat, Bircan;Sahin, Omer Sinan;
10:375:3 Double-nucleation hydrothermal growth of dense and large-scale ZnO nanorod arrays with high aspect ratio on zinc substrate for stable photocatalytic property
DOI:10.1016/j.matlet.2013.05.134 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Zhang, Jing;Su, Yanjie;Wei, Hao;Wang, Jian;Zhang, Chao;Zhao, Jiang;Yang, Zhi;Xu, Maojie;Zhang, Liling;Zhang, Yafei;
10:375:4 Morphology control of Cu(OH)(2) nanowire bundles via a simple template-free route
DOI:10.1016/j.matlet.2012.09.011 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Cheng, Zhipeng;Chu, Xiaozhong;Zhong, Hui;Kan, Yuhe;Yin, Jingzhou;Xu, Jiming;
10:375:5 Structural and photocatalytic study of titanium dioxide films deposited by DC sputtering
DOI:10.1016/j.mssp.2014.01.035 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Wang, Zhaoyong;Yao, Ning;Hu, Xing;Shi, Xinwei;
10:375:6 Solution growth of ZnO nanostructure arrays on FTO substrates at near room temperature
DOI:10.1016/j.matlet.2014.05.209 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Xia, Yongmei;Zhang, Wen;Zhang, Youfa;Yu, Xinquan;Chen, Feng;
10:375:7 Photocatalytic activity of ZnO nanoparticles prepared via submerged arc discharge method
DOI:10.1007/s00339-010-5707-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:16 AU: Ashkarran, Ali Akbar;Zad, Azam Iraji;Mahdavi, Seyed Mohammad;Ahadian, Mohammad Mahdi;
10:375:8 Structural properties of zinc oxide and titanium dioxide nanoparticles prepared by chemical vapor synthesis
DOI:10.1016/j.jallcom.2012.11.158 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Akgul, Guvenc;Akgul, Funda Aksoy;Attenkofer, Klaus;Winterer, Markus;
10:375:9 Synthesis and characterization of cadmium hydroxide nanowires by arc discharge method in de-ionized water
DOI:10.1007/s11051-011-0430-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:7 AU: Eskizeybek, Volkan;Demir, Okan;Avci, Ahmet;Chhowalla, Manish;
10:375:10 Effect of nanosphere monolayer on the morphology of ZnO nanowires grown by hydrothermal method
DOI:10.1016/j.matlet.2012.04.038 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Khanh, N. Q.;Lukacs, I.;Safran, Gy.;Erdelyi, R.;Fueloep, E.;Deak, A.;Volk, J.;
10:375:11 Photo-degradation of Acid Yellow 11 in aqueous on nano-ZnO/Bentonite under ultraviolet and visible light irradiation
DOI:10.1016/j.matlet.2013.12.022 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Xu, Hang;Yu, Tianlong;Liu, Junfeng;
10:376:1 Structure, composition and properties of p-type CuCrO2 thin films
DOI:10.1016/j.ceramint.2014.01.018 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Yu, Ruei-Sung;Tasi, Chorng-Pyng;
10:376:2 Fast synthesis of CuCrO2 delafossite by monomode microwave heating
DOI:10.1016/j.matlet.2011.11.091 JN:MATERIALS LETTERS PY:2012
TC:11 AU: Kumar, Sanjay;Marinel, S.;Miclau, M.;Martin, C.;
10:376:3 Bulk and surface structure characterization of nanoscopic silver doped lanthanum chromites
DOI:10.1016/j.apsusc.2012.10.067 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Desai, P. A.;Joshi, P. N.;Patil, K. R.;Athawale, Anjali A.;
10:376:4 Characteristics of p-type transparent conductive CuCrO2 thin films
DOI:10.1016/j.apsusc.2013.05.061 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Yu, Ruei-Sung;Wu, Chung-Ming;
10:376:5 Silver doped lanthanum chromites by microwave combustion method
DOI:10.1016/j.ceramint.2011.05.008 JN:CERAMICS INTERNATIONAL PY:2011
TC:10 AU: Athawale, A. A.;Desai, P. A.;
10:376:6 Hydrothermal Synthesis of AgCrO2 Delafossite in Supercritical Water: A New Single-Step Process
DOI:10.1021/cm400420e JN:CHEMISTRY OF MATERIALS PY:2013
TC:3 AU: Kumar, Sanjay;Miclau, Marinela;Martin, Christine;
10:376:7 Structure and optoelectronic properties of multi-element oxide thin film
DOI:10.1016/j.apsusc.2011.01.139 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Yu, Ruei-Sung;Huang, Chueh-Jung;Huang, Rong-Hsin;Sun, Chung-Hsing;Shieu, Fuh-Sheng;
10:376:8 Synthesis of amorphous Si-Ge alloys using microwave energy
DOI:10.1016/j.jallcom.2009.10.260 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:5 AU: Cheng, J.;Agrawal, D.;Zhang, Y.;Roy, R.;Santra, A. K.;
10:376:9 Hexagonal polytype of CuCrO2 nanocrystals obtained by hydrothermal method
DOI:10.1007/s11051-012-1110-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:7 AU: Miclau, M.;Ursu, D.;Kumar, S.;Grozescu, I.;
10:376:10 Structural and optoelectronic properties of p-type semiconductor CuAlO2 thin films
DOI:10.1016/j.tsf.2012.11.033 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Yu, Ruei-Sung;Yin, Hui-Hsun;
10:376:11 Interlayer effect on the characterization of the La-Cr-O coatings with post-sputtering annealing treatment
DOI:10.1016/j.apsusc.2009.11.014 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Ho, Wei-Yu;Hsu, Cheng-Hsun;Tsai, Ming-Hua;Yang, Yu-Sen;Wang, Da-Yung;
10:376:12 Epitaxial pore-free gadolinia-doped ceria thin films on yttria-stabilized zirconia by RF magnetron sputtering
DOI:10.1016/j.ceramint.2013.05.014 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Ansari, Haris M.;Rauscher, Michael D.;Dregia, Suliman A.;Akbar, Sheikh A.;
10:376:13 Optical bandgap modulation and magnetic characterization of Fe-doped CuCrO2 nanopowders
DOI:10.1016/j.jallcom.2012.03.059 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:4 AU: Lin, Fangting;Shi, Wangzhou;Liu, Aiyun;
10:376:14 Thermal stability of nanocrystalline 3R-CuCrO2
DOI:10.1007/s11051-013-2160-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Ursu, D.;Miclau, M.;
10:376:15 Effective Ag doping and resistance to sulfur poisoning of La-Mn perovskites for the catalytic flameless combustion of methane
DOI:10.1039/c0jm01344g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:7 AU: Buchneva, O.;Rossetti, I.;Oliva, C.;Scavini, M.;Cappelli, S.;Sironi, B.;Allieta, M.;Kryukov, A.;Forni, L.;
10:377:1 In Situ Study of Thermal Stability of Copper Oxide Nanowires at Anaerobic Environment
DOI:10.1155/2014/670849 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Zhang, Lihui;Feng, Qiong;Nie, Anmin;Liu, Jiabin;Wang, Hongtao;Fang, Youtong;
10:377:2 Vibrational Order, Structural Properties, and Optical Gap of ZnO Nanostructures Sintered through Thermal Decomposition
DOI:10.1155/2014/340384 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Londono-Calderon, Alejandra;Jurado-Lasso, Fernando F.;Romero-Salazar, Juan D.;Jurado-Lasso, Nathaly;Fabian Jurado, J.;
10:377:3 Hydrothermal synthesis of different colors and morphologies of ZnO nanostructures and comparison of their photocatalytic properties
DOI:10.1016/j.ceramint.2013.11.116 JN:CERAMICS INTERNATIONAL PY:2014
TC:11 AU: Farbod, Mansoor;Jafarpoor, Esmat;
10:377:4 Effect of growth parameters on photocatalytic properties of CuO nanowires fabricated by direct oxidation
DOI:10.1016/j.matlet.2012.05.017 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Farbod, Mansoor;Ghaffari, Narges Meamar;Kazeminezhad, Iraj;
10:377:5 Synthesis of TiO2 nanoparticles by a combined sol-gel ball milling method and investigation of nanoparticle size effect on their photocatalytic activities
DOI:10.1016/j.powtec.2011.08.026 JN:POWDER TECHNOLOGY PY:2011
TC:19 AU: Farbod, Mansoor;Khademalrasool, Marzieh;
10:377:6 Fabrication of single phase CuO nanowires and effect of electric field on their growth and investigation of their photocatalytic properties
DOI:10.1016/j.ceramint.2013.06.032 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Farbod, Mansoor;Ghaffari, Narges Meamar;Kazeminezhad, Raj;
10:377:7 Fabrication of different ZnO nanostructures and investigation of morphology dependence of their photocatalytic properties
DOI:10.1016/j.matlet.2012.06.080 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Farbod, Mansoor;Jafarpoor, Esmat;
10:377:8 Effect of nanoparticle surface modification on the adsorption-enhanced photocatalysis of Gd/TiO2 nanocomposite
DOI:10.1016/j.powtec.2013.02.027 JN:POWDER TECHNOLOGY PY:2013
TC:13 AU: Farbod, Mansoor;Kajbafvala, Marzieh;
10:377:9 CuO supported Clinoptilolite towards solar photocatalytic degradation of p-aminophenol
DOI:10.1016/j.powtec.2012.10.017 JN:POWDER TECHNOLOGY PY:2013
TC:31 AU: Nezamzadeh-Ejhieh, Alireza;Amiri, Mehdi;
10:377:10 Evolution of nanoscale morphology in single and binary metal oxide microparticles during reduction and oxidation processes
DOI:10.1039/c4ta04338c JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:3 AU: Qin, Lang;Majumder, Ankita;Fan, Jonathan A.;Kopechek, David;Fan, Liang-Shih;
10:377:11 Study on Vibration Behavior of Doubly Clamped Silicon Nanowires by Molecular Dynamics
DOI:10.1155/2012/342329 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:4 AU: Yu, H.;Zhang, W. W.;Lei, S. Y.;Lu, L. B.;Sun, C.;Huang, Q. A.;
10:377:12 Thermally decomposition of high quality flower-like ZnO nanorods from zinc acetate dihydrate
DOI:10.1016/j.matlet.2014.06.111 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Madavali, Babu;Kim, Hyo-Seob;Hong, Soon-Jik;
10:377:13 Processing temperature dependent morphological and optical properties of ZnO nanorods
DOI:10.1016/j.mssp.2014.01.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Shakti, Nanda;Prakash, Asit;Mandal, Tapendu;Katiyar, Monica;
10:378:1 Structural, optical and magnetic properties of sol-gel derived ZnO:Co diluted magnetic semiconductor nanocrystals: an EXAFS study
DOI:10.1039/c3tc31834f JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:8 AU: Kumar, Shiv;Basu, S.;Rana, B.;Barman, A.;Chatterjee, S.;Jha, S. N.;Bhattacharyya, D.;Sahoo, N. K.;Ghosh, Anup K.;
10:378:2 Structural and optical properties of sol-gel derived nanocrystalline Fe-doped ZnO
DOI:10.1063/1.3658221 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:18 AU: Kumar, Shiv;Mukherjee, Subhrajit;Singh, Ranjan Kr.;Chatterjee, S.;Ghosh, A. K.;
10:378:3 Surface- and bulk-sensitive x-ray absorption study of the valence states of Mn and Co ions in Zn1-2xMnxCoxO nanoparticles
DOI:10.1063/1.3449556 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Kataoka, T.;Yamazaki, Y.;Sakamoto, Y.;Fujimori, A.;Chang, F. -H.;Lin, H. -J.;Huang, D. J.;Chen, C. T.;Tanaka, A.;Mandal, S. K.;Nath, T. K.;Karmakar, D.;Dasgupta, I.;
10:378:4 Structural, thermal and magnetic investigations of heavily Mn-doped ZnO nanoparticles
DOI:10.1016/j.jmmm.2011.04.018 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:10 AU: Duan, Libing;Zhao, Xiaoru;Liu, Jinming;Geng, Wangchang;Xie, Haiyan;Chen, Shuai;
10:378:5 Antiferromagnetic interaction between paramagnetic Co ions in the diluted magnetic semiconductor Zn1-xCoxO
DOI:10.1103/PhysRevB.81.075204 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: Kobayashi, M.;Ishida, Y.;Hwang, J. I.;Osafune, Y.;Fujimori, A.;Takeda, Y.;Okane, T.;Saitoh, Y.;Kobayashi, K.;Saeki, H.;Kawai, T.;Tabata, H.;
10:378:6 Structural, optical and magnetic characterization of Ru doped ZnO nanorods
DOI:10.1016/j.jallcom.2013.11.137 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:6 AU: Kumar, Sanjeev;Kaur, Palvinder;Chen, C. L.;Thangavel, R.;Dong, C. L.;Ho, Y. K.;Lee, J. F.;Chan, T. S.;Chen, T. K.;Mok, B. H.;Rao, S. M.;Wu, M. K.;
10:378:7 Improving the Solubility of Mn and Suppressing the Oxygen Vacancy Density in Zn0.98Mn0.02O Nanocrystals via Octylamine Treatment
DOI:10.1021/am301471v JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:5 AU: Cheng, Yan;Hao, Weichang;Xu, Huaizhe;Yu, YouXing;Wang, Tianmin;Chen, Rui;Zhang, Linjuan;Du, Y.;Wang, X. L.;Dou, S. X.;
10:378:8 X-ray absorption spectroscopy of doped ZrO2 systems
DOI:10.1063/1.3693470 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Basu, S.;Varma, Salil;Shirsat, A. N.;Wani, B. N.;Bharadwaj, S. R.;Chakrabarti, A.;Jha, S. N.;Bhattacharyya, D.;
10:378:9 Extended X-ray absorption fine structure study of Gd doped ZrO2 systems
DOI:10.1063/1.4788823 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Basu, S.;Varma, Salil;Shirsat, A. N.;Wani, B. N.;Bharadwaj, S. R.;Chakrabarti, Aparna;Jha, S. N.;Bhattacharyya, D.;
10:379:1 High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method
DOI:10.1016/j.tsf.2009.12.023 JN:THIN SOLID FILMS PY:2010
TC:26 AU: Ievtushenko, A. I.;Karpyna, V. A.;Lazorenko, V. I.;Lashkarev, G. V.;Khranovskyy, V. D.;Baturin, V. A.;Karpenko, O. Y.;Lunika, M. M.;Avramenko, K. A.;Strelchuk, V. V.;Kutsay, O. M.;
10:379:2 Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation
DOI:10.1016/j.jallcom.2014.05.074 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:9 AU: Zhang, J. W.;He, G.;Zhou, L.;Chen, H. S.;Chen, X. S.;Chen, X. F.;Deng, B.;Lv, J. G.;Sun, Z. Q.;
10:379:3 Evidence of hydrogen-mediated ferromagnetic coupling in Mn-doped ZnO
DOI:10.1063/1.3561775 JN:APPLIED PHYSICS LETTERS PY:2011
TC:18 AU: Park, Jun Kue;Lee, Kyu Won;Kweon, Hyocheon;Lee, Cheol Eui;
10:379:4 Structural and optical properties of textured ZnO:Al films on glass substrates prepared by in-line rf magnetron sputtering
DOI:10.1016/j.solmat.2010.03.032 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:15 AU: Cho, Jun-Sik;Kim, Young-Jin;Lee, Jeong Chul;Park, Sang-Hyun;Yoon, Kyung Hoon;
10:379:5 Structural and optical properties of Zn-In-Te thin films deposited by thermal evaporation technique
DOI:10.1016/j.jallcom.2013.03.030 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Gullu, H. H.;Bayrakli, O.;Candan, I.;Coskun, E.;Parlak, M.;
10:379:6 Modification of the optical properties of ZnO thin films by proton implantation
DOI:10.1016/j.materresbull.2012.05.029 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Ham, Yong Ju;Park, Jun Kue;Lee, W.;Lee, Cheol Eui;Park, W.;
10:379:7 Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process
DOI:10.1016/j.jallcom.2011.12.094 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Aqili, Akram K. S.;Saleh, Ahmad J.;Ali, Zulfiqar;Al-Omari, S.;
10:379:8 First-principles investigation of electrical and magnetic properties of ZnO based diluted magnetic semiconductors codoped with H
DOI:10.1063/1.4719977 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Assadi, M. H. N.;Zheng, R. K.;Li, S.;Ringer, S. R.;
10:379:9 In situ measurement of the internal stress evolution during sputter deposition of ZnO:Al
DOI:10.1016/j.solmat.2011.11.013 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:1 AU: Michotte, S.;Proost, J.;
10:379:10 Multi-phonon excitations in ZnO textured crystalline films by Raman spectroscopy
DOI:10.1016/j.tsf.2012.06.076 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Lashkarev, G.;Karpyna, V.;Yaremko, A.;
10:380:1 Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment
DOI:10.1016/j.tsf.2010.05.020 JN:THIN SOLID FILMS PY:2010
TC:23 AU: Chang, H. P.;Wang, F. H.;Wu, J. Y.;Kung, C. Y.;Liu, H. W.;
10:380:2 Room-temperature preparation and properties of cadmium sulfide thin films by ion-beam sputtering deposition
DOI:10.1016/j.apsusc.2013.02.067 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Liang, Guang-Xing;Fan, Ping;Zheng, Zhuang-Hao;Luo, Jing-Ting;Zhang, Dong-Ping;Chen, Chao-Ming;Cao, Peng-Ju;
10:380:3 Elastic constants and bulk modulus of semiconductors: Performance of plane-wave pseudopotential and local-density-approximation density functional theory
DOI:10.1016/j.commatsci.2012.01.013 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2012
TC:6 AU: Tan, Jiajin;Li, Ying;Ji, Guangfu;
10:380:4 Effects of growth process on the optical and electrical properties in Al-doped ZnO thin films
DOI:10.1063/1.4866997 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Prabhakar, Tejas;Dai, Lingling;Zhang, Lin;Yang, Rong;Li, Liwei;Guo, Ted;Yan, Yanfa;
10:380:5 The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering
DOI:10.1007/s11664-010-1503-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:12 AU: Liang, Guang-Xing;Fan, Ping;Cai, Xing-Min;Zhang, Dong-Ping;Zheng, Zhuang-Hao;
10:380:6 Direct on chip cadmium sulfide thin film transistors synthesized via modified chemical surface deposition
DOI:10.1039/c3tc31475h JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Ramos, Juan C.;Mejia, Israel;Martinez, Carlos A.;Quevedo-Lopez, M. A.;
10:380:7 Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition
DOI:10.1557/jmr.2011.342 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:0 AU: Zhu, Yuankun;Mendelsberg, Rueben J.;Lim, Sunnie H. N.;Zhu, Jiaqi;Han, Jiecai;Anders, Andre;
10:380:8 Electrical and optical properties of sputter-deposited cadmium sulfide thin films optimized by annealing temperature
DOI:10.1016/j.mssp.2011.09.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:17 AU: Kim, Nam-Hoon;Ryu, Seung-Han;Noh, Hyo-Sup;Lee, Woo-Sun;
10:380:9 Influence of Ni-Ni separation on the optoelectronic and magnetic properties of Ni-doped cubic cadmium sulphide
DOI:10.1016/j.mssp.2013.08.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Benstaali, W.;Bentata, S.;Bentounes, H. A.;Abbad, A.;Bouadjemi, B.;
10:380:10 Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition
DOI:10.1016/j.tsf.2013.10.168 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Hernandez-Como, N.;Martinez-Landeros, V.;Mejia, I.;Aguirre-Tostado, F. S.;Nascimento, C. D.;Azevedo, G. de M.;Krug, C.;Quevedo-Lopez, M. A.;
10:380:11 High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy
DOI:10.1063/1.4755775 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Bhasker, H. P.;Dhar, S.;Sain, A.;Kesaria, Manoj;Shivaprasad, S. M.;
10:380:12 Structural and optical characterization of Ni-doped CdS quantum dots
DOI:10.1007/s10853-010-5204-y JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:6 AU: Thambidurai, M.;Muthukumarasamy, N.;Agilan, S.;Arul, N. Sabari;Murugan, N.;Balasundaraprabhu, R.;
10:381:1 Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy
DOI:10.1063/1.4861421 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Tang, J.;Deng, L. Y.;Tay, C. B.;Zhang, X. H.;Chai, J. W.;Qin, H.;Liu, H. W.;Venkatesan, T.;Chua, S. J.;
10:381:2 Origin of the Variation of Exciton Binding Energy in Semiconductors
DOI:10.1103/PhysRevLett.110.016402 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:23 AU: Dvorak, Marc;Wei, Su-Huai;Wu, Zhigang;
10:381:3 Transferability of solution processed epitaxial Ga:ZnO films; tailored for gas sensor and transparent conducting oxide applications
DOI:10.1039/c2jm32590j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:8 AU: Kevin, Moe;Tho, Wee Hong;Ho, Ghim Wei;
10:381:4 Terahertz time-domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films
DOI:10.1063/1.4721490 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Lim, Meehyun;Choi, Sung-Jin;Lee, Gyu-Seok;Seol, Myeong-Lok;Do, Youngwoong;Choi, Yang-Kyu;Han, Haewook;
10:381:5 Temperature dependent distinct coupling and dispersions of heavy- and light-hole excitonic polaritons in ZnO
DOI:10.1063/1.4722933 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Zheng, C. C.;Xu, S. J.;Ning, J. Q.;Chen, Y. N.;Zhang, F.;Che, C. M.;
10:381:6 Two-electron-satellite transition of donor bound exciton in ZnO: Radiative Auger effect
DOI:10.1063/1.4804619 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Wang, X. H.;Xu, S. J.;
10:381:7 Determination of effective mass of heavy hole from phonon-assisted excitonic luminescence spectra in ZnO
DOI:10.1063/1.3549724 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Shi, S. L.;Xu, S. J.;
10:381:8 Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?
DOI:10.1063/1.4766188 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Zheng, C. C.;Xu, S. J.;Zhang, F.;Ning, J. Q.;Zhao, D. G.;Yang, H.;Che, C. M.;
10:381:9 Optical properties of light-hole excitons in GaN epilayers
DOI:10.1063/1.3520218 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Zhang, Fan;Xu, S. J.;Ning, J. Q.;Zheng, C. C.;Zhao, D. G.;Yang, H.;Che, C. M.;
10:381:10 Terahertz dielectric response and optical conductivity of n-type single-crystal ZnO epilayers grown by metalorganic chemical vapor deposition
DOI:10.1063/1.3294650 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Zhang, X. H.;Guo, H. C.;Yong, A. M.;Ye, J. D.;Tan, S. T.;Sun, X. W.;
10:381:11 Origin of the Variation of Exciton Binding Energy in Semiconductors (vol 110, 016402, 2013)
DOI:10.1103/PhysRevLett.110.169904 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:0 AU: Dvorak, Marc;Wei, Su-Huai;Wu, Zhigang;
10:382:1 Synthesis and characterization of nanostructured ZnO multilayer grown by DC magnetron sputtering
DOI:10.1016/j.jallcom.2014.03.029 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Shirazi, Marzieh;Hosseinnejad, M. T.;Zendehnam, Akbar;Ghoranneviss, Mahmood;Etaati, G. Reza;
10:382:2 The Urbach-Martienssen absorption tails in the optical spectra of semiconducting variable-sized zinc selenide and cadmium selenide quantum dots in thin film form
DOI:10.1016/j.matchemphys.2009.08.064 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:20 AU: Pejova, Bijana;
10:382:3 Effects of oxygen/argon ratio and annealing on structural and optical properties of ZnO thin films
DOI:10.1016/j.apsusc.2012.02.088 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Zhou, Bing;Rogachev, Aleksandr V.;Liu, Zhubo;Piliptsou, Dzmitry G.;Ji, Hongjun;Jiang, Xiaohong;
10:382:4 Influence of oxygen/argon ratio on structural, electrical and optical properties of Ag-doped ZnO thin films
DOI:10.1016/j.jcrysgro.2010.02.042 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Deng, R.;Yao, B.;Li, Y. F.;Yang, T.;Li, B. H.;Zhang, Z. Z.;Shan, C. X.;Zhang, J. Y.;Shen, D. Z.;
10:382:5 Characterization of ZnO thin films grown on various substrates by RF magnetron sputtering
DOI:10.1016/j.apsusc.2010.02.009 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Lee, Kyu-Hang;Cho, Nam-In;Yun, Eui-Jung;Nam, H. G.;
10:382:6 Influence of annealing conditions on the crystallographic structure, chemical composition and luminescence of ZnO thin films
DOI:10.1016/j.apsusc.2013.11.043 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Khojier, K.;Savaloni, H.;Amani, E.;
10:382:7 Effects of thermal annealing on the optical, spectroscopic, and structural properties of tris (8-hydroxyquinolinate) gallium films grown on quartz substrates
DOI:10.1016/j.matchemphys.2011.05.077 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:9 AU: Muhammad, Fahmi Fariq;Sulaiman, Khaulah;
10:382:8 Deposition of ZnO multilayer on LiNbO3 single crystals by DC-magnetron sputtering
DOI:10.1016/j.apsusc.2011.07.027 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Shirazi, M.;Hosseinnejad, M. T.;Zendehnam, A.;Ghorannevis, Z.;Ghoranneviss, M.;
10:382:9 Structural and optical properties of In-doped ZnO thin films under wet annealing
DOI:10.1016/j.matlet.2013.11.088 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Ooi, P. K.;Ng, S. S.;Abdullah, M. J.;Hassan, Z.;
10:383:1 Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films
DOI:10.1016/j.apsusc.2010.09.100 JN:APPLIED SURFACE SCIENCE PY:2011
TC:24 AU: Wang, Tao;Liu, Yanmei;Fang, Qingqing;Wu, Mingzai;Sun, Xia;Lu, Fei;
10:383:2 Structural and optical properties of (Al, K)-co-doped ZnO thin films deposited by a sol-gel technique
DOI:10.1016/j.mssp.2012.12.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:8 AU: Xu, Jianping;Shi, Shaobo;Zhang, Xiaosong;Wang, Youwei;Zhu, Mingxue;Li, Lan;
10:383:3 Preparation and characterization of sol-gel Al-doped ZnO thin films and ZnO nanowire arrays grown on Al-doped ZnO seed layer by hydrothermal method
DOI:10.1016/j.solmat.2010.07.009 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:39 AU: Zhang, Jin;Que, Wenxiu;
10:383:4 Sol-gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study
DOI:10.1016/j.apsusc.2013.11.062 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Ebrahimifard, Reza;Golobostanfard, Mohammad Reza;Abdizadeh, Hossein;
10:383:5 Response to the comment on "Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films"
DOI:10.1016/j.apsusc.2011.05.037 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Wang, Tao;Liu, Yanmei;
10:383:6 Comment on "Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films"
DOI:10.1016/j.apsusc.2011.05.036 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Wang, Mingsong;
10:383:7 Comment on "Blue light emission from barium doped zinc sulfide nanoparticles"
DOI:10.1016/j.ceramint.2013.05.037 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: Bouznit, Y.;Beggah, Y.;
10:383:8 Response to the comment on "Blue light emission from barium doped zinc sulphide nanoparticles"
DOI:10.1016/j.ceramint.2013.05.040 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: Pathak, C. S.;Mandal, M. K.;Mishra, D. D.;Agarwala, V.;
10:383:9 TiO2 supported on bamboo charcoal for H2O2-assisted pollutant degradation under solar light
DOI:10.1016/j.mssp.2013.08.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Zhang, Wei;Huang, Ying;Liu, Panbo;Zhao, Yang;Wu, Haiwei;Guan, Mengmeng;Zhang, Hailong;
10:384:1 Study on formaldehyde gas-sensing of In2O3-sensitized ZnO nanoflowers under visible light irradiation at room temperature
DOI:10.1039/c2jm16105b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:24 AU: Han, Lina;Wang, Dejun;Cui, Jiabao;Chen, Liping;Jiang, Tengfei;Lin, Yanhong;
10:384:2 Morphology-tuned synthesis of arrayed one-dimensional ZnO nanostructures from Zn(NO3)(2) and dimethylamine borane solutions and their photoluminescence and photocatalytic properties
DOI:10.1016/j.matchemphys.2011.11.082 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:6 AU: Tian, Qiang;Li, Jiangong;Xie, Qingshui;Wang, Qian;
10:384:3 A highly sensitive and selective formaldehyde gas sensor using a molecular imprinting technique based on Ag-LaFeO3
DOI:10.1039/c4tc01972e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:0 AU: Zhang, Yumin;Liu, Qingju;Zhang, Jin;Zhu, Qin;Zhu, Zhongqi;
10:384:4 One-step hydrothermal synthesis of In2O3-ZnO heterostructural composites and their enhanced visible-light photocatalytic activity
DOI:10.1016/j.matlet.2014.05.182 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Liu, Hairui;He, Xia;Hu, Yanchun;Liu, Xuguang;Jia, Husheng;Xu, Bingshe;
10:384:5 Synthesis and characterization of ZnO and Ag nanoparticle-loaded TiO2 nanotube composite layers intended for antibacterial coatings
DOI:10.1016/j.tsf.2013.11.057 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Roguska, A.;Pisarek, M.;Andrzejczuk, M.;Lewandowska, M.;
10:384:6 Interconnected Networks of Zn(NO3)(2)center dot 6(H2O) Nanotubes and Its Solid-Phase Transformation into Porous Zinc Oxide Architectures
DOI:10.1021/cm902490g JN:CHEMISTRY OF MATERIALS PY:2010
TC:12 AU: Wu, Ji Hong;Varghese, Binni;Zhou, Xue Dong;Teo, Si Ying;Sow, Chorng Haur;Ang, Siau Gek;Xu, Guo Qin;
10:384:7 Leaf-like ZnO nanostructure and its excellent photocatalytic activity
DOI:10.1016/j.matlet.2014.01.182 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Xu, Linhua;Zheng, Gaige;Wang, Junfeng;Lai, Min;Miao, Juhong;Xian, Fenglin;Gu, Fang;Sun, Tingting;
10:384:8 Chemical Tuning versus Microstructure Features in Solid-State Gas Sensors: LaFe1-xGaxO3, a Case Study
DOI:10.1021/cm4018858 JN:CHEMISTRY OF MATERIALS PY:2014
TC:7 AU: Natile, Marta Maria;Ponzoni, Andrea;Concina, Isabella;Glisenti, Antonella;
10:384:9 Studies of bacterial adhesion on TiN, SiO2-TiO2 and hydroxyapatite thin layers deposited on titanium and Ti6Al4V alloy for medical applications
DOI:10.1016/j.tsf.2010.08.117 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Belcarz, Anna;Bienias, Jaroslaw;Surowska, Barbara;Ginalska, Grazyna;
10:385:1 Aqueous-based route toward Fe:ZnSe semiconductor nanocrystals: Synthesis and characterization
DOI:10.1016/j.matchar.2011.03.016 JN:MATERIALS CHARACTERIZATION PY:2011
TC:4 AU: Xie, Ruishi;Li, Yuanli;Liu, Lingyun;Yang, Lin;Xiao, Dingquan;Zhu, Jianguo;
10:385:2 Study of physical properties of cobalt oxide (Co3O4) nanocrystals
DOI:10.1016/j.matchar.2010.02.017 JN:MATERIALS CHARACTERIZATION PY:2010
TC:41 AU: Pal, Jagriti;Chauhan, Pratima;
10:385:3 A simple route in the synthesis of CdS nanoparticles
DOI:10.1016/j.matlet.2013.07.081 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Ristic, Mira;Popovic, Stanko;Ivanda, Mile;Music, Svetozar;
10:385:4 Ultrasonic/surfactant assisted of CdS nano hollow sphere synthesis and characterization
DOI:10.1016/j.matchar.2010.11.003 JN:MATERIALS CHARACTERIZATION PY:2011
TC:20 AU: Rafati, Amir Abbas;Borujeni, Ahmad Reza Afraz;Najafi, Mojgan;Bagheri, Ahmad;
10:385:5 A new synthesis of hexadecylamine-capped Mn-doped wurtzite CdSe nanoparticles
DOI:10.1016/j.matlet.2010.04.007 JN:MATERIALS LETTERS PY:2010
TC:11 AU: Oluwafemi, Oluwatobi S.;Revaprasadu, N.;Adeyemi, Olufemi O.;
10:385:6 Structural and morphological evolution of CdS nanosheets-based superstructures by surfactant assisted solvothermal method
DOI:10.1016/j.matchemphys.2012.08.047 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Nisha, K. D.;Navaneethan, M.;Hayakawa, Y.;Ponnusamy, S.;Muthamizhchelvan, C.;
10:385:7 XAFS analysis and luminescent properties of ZnS:Mn2+ nanoparticles and nanorods with cubic and hexagonal structure
DOI:10.1016/j.optmat.2010.01.017 JN:OPTICAL MATERIALS PY:2010
TC:8 AU: Cao, Jian;Yang, Jinghai;Zhang, Yongjun;Wang, Yaxin;Yang, Lili;Wang, Dandan;Liu, Yang;Liu, Xiaoyan;Xie, Zhi;
10:385:8 Synthesis and Characterization of Sodium Bis(2-ethylhexyl) Sulfonsuccinate (AOT) Capped Pure and Mn-Doped CdS Nanoparticles
DOI:10.1155/2012/492573 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Venkatesan, D.;Deepan, D.;Ramkumar, J.;Babu, S. Moorthy;Dhanasekaran, R.;
10:385:9 Biomimetic synthesis of PbS nanocubes in the lysozyme solution
DOI:10.1016/j.matlet.2011.08.036 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Qin, Dezhi;Zhang, Li;He, Guoxu;Liu, Qiaoru;
10:385:10 Microstructural and optical characterizations of highly stable nanospheres of crystalline CdS via selective approach
DOI:10.1364/OME.4.0129 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Leal-Cruz, A. L.;Vera-Marquina, A.;Berman-Mendoza, D.;VillaVelazquez-Mendoza, C.;Zaldivar-Huerta, I. E.;Garcia-Delgado, L. A.;Garcia-Juarez, A.;Gomez-Fuentes, R.;Rojas-Hernandez, A. G.;
10:385:11 Aqueous-based route toward Fe:ZnSe semiconductor nanocrystals: Synthesis and characterization (vol 62, pg 582, 2011)
DOI:10.1016/j.matchar.2012.08.012 JN:MATERIALS CHARACTERIZATION PY:2012
TC:0 AU: Xie, Ruishi;Li, Yuanli;Liu, Lingyun;Yang, Lin;Xiao, Dingquan;Zhu, Jianguo;
10:385:12 Synthesis and characterization of MnS and MnSe nanoparticles: Morphology, optical and magnetic properties
DOI:10.1016/j.optmat.2013.06.023 JN:OPTICAL MATERIALS PY:2013
TC:3 AU: Moloto, N.;Moloto, M. J.;Kalenga, M.;Govindraju, S.;Airo, M.;
10:386:1 High performance ethanol sensing films fabricated from ZnO and In2O3 nanofibers with a double-layer structure
DOI:10.1016/j.apsusc.2012.03.098 JN:APPLIED SURFACE SCIENCE PY:2012
TC:24 AU: Zhang, Xiao-Juan;Qiao, Guan-Jun;
10:386:2 Synthesis of SnO2/ZnO composite nanofibers by electrospinning method and study of its ethanol sensing properties
DOI:10.1016/j.apsusc.2011.04.052 JN:APPLIED SURFACE SCIENCE PY:2011
TC:27 AU: Khorami, Hamed Akbari;Keyanpour-Rad, Mansoor;Vaezi, Mohammad Reza;
10:386:3 A highly sensitive ethanol sensor based on Ag@TiO2 nanoparticles at room temperature
DOI:10.1016/j.apsusc.2014.09.108 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Zhu, Zhen;Kao, Cheng-Tse;Wu, Ren-Jang;
10:386:4 Effects of MeV ion irradiation on structural and optical properties of SnO2-ZnO nanocomposites prepared by carbothermal evaporation
DOI:10.1016/j.jallcom.2014.08.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Bhardwaj, Neha;Kuriakose, Sini;Pandey, A.;Sharma, R. C.;Avasthi, D. K.;Mohapatra, Satyabrata;
10:386:5 Effect of magnetism on the ethanol sensitivity of undoped and Mn-doped CuO nanoflakes
DOI:10.1016/j.apsusc.2013.01.084 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Mariammal, R. N.;Ramachandran, K.;Kalaiselvan, G.;Arumugam, S.;Renganathan, B.;Sastikumar, D.;
10:386:6 Enhancement of ferromagnetic properties in Zn0.95Co0.05O nanoparticles by indium codoping: An experimental and theoretical study
DOI:10.1063/1.3517450 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Jayakumar, O. D.;Sudakar, C.;Persson, C.;Salunke, H. G.;Naik, R.;Tyagi, A. K.;
10:386:7 Effect of 100 MeV O7+ ions irradiation on ethanol sensing response of nanostructures of ZnO and SnO2
DOI:10.1007/s00339-009-5442-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:7 AU: Singh, Ravi Chand;Singh, Manmeet Pal;Singh, Onkar;Chandi, Paramdeep Singh;Kumar, Ravi;
10:386:8 Local structural disorder in Zn0.9Co0.1O nanocrystals studied using neutron total scattering analysis
DOI:10.1063/1.4758183 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Jeong, I. -K.;Lee, Seunghun;Llobet, A.;
10:386:9 Room temperature ferromagnetism in Fe doped CuO nanorods
DOI:10.1016/j.jmmm.2010.04.020 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:15 AU: Manna, S.;De, S. K.;
10:386:10 Investigation of gas sensing materials tin oxide nanofibers treated by oxygen plasma
DOI:10.1007/s11051-013-2216-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Du, Hai-Ying;Wang, Jing;Yu, Peng;Yu, Nai-Seng;Sun, Yan-Hui;Tian, Jiang-Li;
10:386:11 Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection
DOI:10.1016/j.apsusc.2011.06.112 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Labidi, A.;Bejaoui, A.;Ouali, H.;Akkari, F. Chaffar;Hajjaji, A.;Gaidi, M.;Kanzari, M.;Bessais, B.;Maaref, M.;
10:386:12 Temperature-dependent linear or nonlinear gas sensing characteristics of In2O3 mixed alpha-Fe2O3 nanorods with high sensitivity
DOI:10.1016/j.apsusc.2011.05.020 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Xing, Li-Li;Ma, Chun-Hua;Chen, Zhao-Hui;Xue, Xin-Yu;
10:386:13 Effect of reaction temperature on crystallite size and sensing response of chromium oxide nanoparticles
DOI:10.1016/j.materresbull.2012.03.065 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Kohli, Nipin;Singh, Onkar;Anand, Kanika;Singh, Ravi Chand;
10:387:1 Observation of exciton-phonon coupling and enhanced photoluminescence emission in ZnO nanotwins synthesized by a simple wet chemical approach
DOI:10.1016/j.matlet.2013.02.111 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Chakraborty, S.;Kumbhakar, P.;
10:387:2 Effect of substrate temperature on the growth of pulsed-laser deposited ZnO nanostructures
DOI:10.1007/s00339-014-8347-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Ghosh, Poulami;Sharma, Ashwini Kumar;
10:387:3 Optical Characterization and Growth Mechanism of Combination of Zinc Oxide Nanowires and Nanorods at Various Substrate Temperatures
DOI:10.1155/2013/480164 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Ghosh, Poulami;Sharma, A. K.;
10:387:4 Growth and optical characterization of diamond-shaped zinc oxide nanostructures deposited by pulsed laser ablation
DOI:10.1007/s00339-013-8054-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Ghosh, Poulami;Sharma, Ashwini Kumar;
10:387:5 Experimental evidence and physical understanding of ZnO vapor-liquid-solid nanowire growth
DOI:10.1007/s00339-010-5944-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:8 AU: Yang, Y. H.;Feng, Y.;Yang, G. W.;
10:387:6 Hybrid Ag2O/ZnO Heterostructures
DOI:10.1155/2013/684797 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Wang, Jing;Liu, Yang;Jiao, Yang;Qu, Fengyu;Pan, Qingzhi;Wu, Xiang;
10:387:7 Nanosheet-Assembled ZnO Microflower Photocatalysts
DOI:10.1155/2014/532317 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Zhang, Siwen;Yin, Bosi;Jiao, Yang;Liu, Yang;Qu, Fengyu;Wu, Xiang;
10:387:8 Statistical Parameters Effects on Photocatalytic Degradation of Rhodamine 6G Dye with Hexagonal Zinc Oxide Nanorods Synthesized via Solution Process
DOI:10.1007/s11664-014-3397-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Wahab, Rizwan;Khan, Farheen;
10:387:9 Three-photon absorption induced whispering gallery mode lasing in ZnO twin-rods microstructure
DOI:10.1016/j.optmat.2010.08.030 JN:OPTICAL MATERIALS PY:2011
TC:9 AU: Dai, J.;Xu, C. X.;Shi, Z. L.;Ding, R.;Guo, J. Y.;Li, Z. H.;Gu, B. X.;Wu, P.;
10:387:10 Surfactant dependent growth of twinned ZnO nanodisks
DOI:10.1016/j.matlet.2013.12.068 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Hussain, Shahid;Liu, Tianmo;Kashif, M.;Miao, Bin;He, Jiejun;Zeng, Wen;Zhang, Yu;Hashim, U.;Pan, Fusheng;
10:387:11 Aqueous chemical growth of free standing vertical ZnO nanoprisms, nanorods and nanodiskettes with improved texture co-efficient and tunable size uniformity
DOI:10.1007/s00339-011-6518-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Ram, S. D. Gopal;Ravi, G.;Athimoolam, A.;Mahalingam, T.;Kulandainathan, M. Anbu;
10:388:1 Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels
DOI:10.1016/j.apsusc.2010.08.080 JN:APPLIED SURFACE SCIENCE PY:2010
TC:32 AU: Tseng, Shih-Feng;Hsiao, Wen-Tse;Huang, Kuo-Cheng;Chiang, Donyau;Chen, Ming-Fei;Chou, Chang-Pin;
10:388:2 The effect of laser patterning parameters on fluorine-doped tin oxide films deposited on glass substrates
DOI:10.1016/j.apsusc.2011.04.055 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Tseng, Shih-Feng;Hsiao, Wen-Tse;Huang, Kuo-Cheng;Chiang, Donyau;
10:388:3 Electrode patterning on PEDOT:PSS thin films by pulsed ultraviolet laser for touch panel screens
DOI:10.1007/s00339-012-7172-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:8 AU: Tseng, Shih-Feng;Hsiao, Wen-Tse;Huang, Kuo-Cheng;Chiang, Donyau;
10:388:4 Temperature profile of the multilayer structure irradiated by pulsed laser
DOI:10.1007/s00339-012-7129-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Chiang, Donyau;Tseng, Shih-Feng;Hsiao, Wen-Tse;Hsiao, Chien-Nan;
10:388:5 Sapphire surface patterning using femtosecond laser micromachining
DOI:10.1007/s00339-012-7048-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:6 AU: Chang, Cho-Wei;Chen, Chien-Yu;Chang, Tien-Li;Ting, Chia-Jen;Wang, Chien-Ping;Chou, Chang-Pin;
10:388:6 Picosecond laser patterning of PEDOT:PSS thin films
DOI:10.1016/j.synthmet.2010.12.022 JN:SYNTHETIC METALS PY:2011
TC:13 AU: Semaltianos, N. G.;Koidis, C.;Pitsalidis, C.;Karagiannidis, P.;Logothetidis, S.;Perrie, W.;Liu, D.;Edwardson, S. P.;Fearon, E.;Potter, R. J.;Dearden, G.;Watkins, K. G.;
10:388:7 Direct patterning of microelectrode arrays using femtosecond laser micromachining
DOI:10.1016/j.apsusc.2010.01.022 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Hayden, C. J.;Dalton, C.;
10:388:8 Laser direct patterning of a reduced-graphene oxide transparent circuit on a graphene oxide thin film
DOI:10.1063/1.4812233 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Yung, K. C.;Liem, H.;Choy, H. S.;Chen, Z. C.;Cheng, K. H.;Cai, Z. X.;
10:388:9 Fabricating planar spiral inductances for a wireless charging module by using 355 nm ultraviolet laser ablation
DOI:10.1007/s00339-014-8657-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Yang, Ching-Ching;Tsai, Hsin-Yi;Yang, Chih-Chung;Hsiao, Wen-Tse;Huang, Kuo-Cheng;
10:388:10 Microelectrode patterning of metal films using pulsed UV-laser system
DOI:10.1007/s00339-014-8315-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Yang, Chih-Chung;Hsiao, Wen-Tse;Chung, Chien-Kai;Tsai, Hsin-Yi;Yeh, Jer-Liang Andrew;Huang, Kuo-Cheng;
10:388:11 Excimer laser patterning of PEDOT:PSS thin-films on flexible barrier foils: A surface analysis study
DOI:10.1016/j.apsusc.2013.05.018 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Naithani, Sanjeev;Schaubroeck, David;Vercammen, Yannick;Mandamparambil, Rajesh;Yakimets, Iryna;Van Vaeck, Luc;Van Steenberge, Geert;
10:388:12 Ablation of PEDOT/PSS with excimer lasers for micro structuring of organic electronic devices
DOI:10.1016/j.synthmet.2011.03.014 JN:SYNTHETIC METALS PY:2011
TC:8 AU: Schaefer, Moritz;Holtkamp, Jens;Gillner, Arnold;
10:389:1 Fabrication of TiO2 nanostructured films by spray deposition with high photocatalytic activity of methylene blue
DOI:10.1016/j.matlet.2010.03.033 JN:MATERIALS LETTERS PY:2010
TC:22 AU: Nguyen-Phan, Thuy-Duong;Pham, Viet Hung;Cuong, Tran Viet;Hahn, Sung Hong;Kim, Eui Jung;Chung, Jin Suk;Hur, Seung Hyun;Shin, Eun Woo;
10:389:2 Cactus architecture of ZnO nanoparticles network through simple wet chemistry: Efficient dye sensitized solar cells
DOI:10.1016/j.matlet.2013.10.106 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Baviskar, Prashant;Gore, Ratnakar;Ennaoui, Ahmed;Sankapal, Babasaheb;
10:389:3 Controllable growth of ZnO nanorods by seed layers annealing using hydrothermal method
DOI:10.1016/j.matlet.2013.06.100 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Xian, Fenglin;Bai, Wangfeng;Xu, Linhua;Wang, Xiaoxiong;Li, Xiangyin;
10:389:4 Synthesis of garland like ZnO nanorods and their application in dye sensitized solar cells
DOI:10.1016/j.matlet.2012.10.036 JN:MATERIALS LETTERS PY:2013
TC:16 AU: Thambidurai, M.;Muthukumarasamy, N.;Velauthapillai, Dhayalan;Lee, Changhee;
10:389:5 One-step large-scale synthesis of porous ZnO nanofibers and their application in dye-sensitized solar cells
DOI:10.1016/j.matlet.2011.06.073 JN:MATERIALS LETTERS PY:2011
TC:19 AU: Li, Su;Zhang, Xiaozhong;Jiao, Xingjian;Lin, Hong;
10:389:6 Metal-free indoline dye sensitized zinc oxide nanowires solar cell
DOI:10.1016/j.matlet.2010.03.037 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Chen, Guanyu;Zheng, Kaibo;Mo, Xiaoliang;Sun, Dalin;Meng, Qinghua;Chen, Guorong;
10:389:7 Hydrothermally grown ZnO nanoflowers for environmental remediation and clean energy applications
DOI:10.1016/j.materresbull.2012.05.028 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:11 AU: Umar, Ahmad;Akhtar, M. S.;Al-Hajry, A.;Al-Assiri, M. S.;Almehbad, Noura Y.;
10:389:8 Controllable hydrothermal synthesis of ZnO nanowires arrays on Al-doped ZnO seed layer and patterning of ZnO nanowires arrays via surface modification of substrate
DOI:10.1016/j.apsusc.2011.06.163 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Zhang, Jin;Que, Wenxiu;Jia, Qiaoying;Ye, Xiangdong;Ding, Yucheng;
10:389:9 One-dimensional TiO2 nanostructures with improved UV-blocking properties
DOI:10.1016/j.matlet.2012.11.130 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Kwon, Hye-Jin;Lee, Young-Woo;Kim, Hyun-Su;Zhoh, Choon-Koo;Park, Kyung-Won;
10:389:10 Orderly interconnected nanosheets for dye-sensitized solar cells
DOI:10.1016/j.matlet.2014.03.111 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Wang, Juangang;Chen, Tiedan;
10:389:11 Influence of TiO2 dimension and graphene oxide content on the self-cleaning activity of methylene blue-stained photocatalytic films
DOI:10.1016/j.materresbull.2012.04.091 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:3 AU: Yun, Hyunran;Nguyen-Phan, Thuy-Duong;Pham, Viet Hung;Kweon, Hyukmin;Chung, Jin Suk;Lee, Byunghwan;Shin, Eun Woo;
10:390:1 Surface related and intrinsic exciton recombination dynamics in ZnO nanoparticles synthesized by a sol-gel method
DOI:10.1063/1.4774002 JN:APPLIED PHYSICS LETTERS PY:2013
TC:9 AU: Hsu, Hsu-Cheng;Huang, Hsin-Ying;Eriksson, Martin O.;Dai, Tsen-Fang;Holtz, Per-Olof;
10:390:2 Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device
DOI:10.1063/1.3682307 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Omata, T.;Tani, Y.;Kobayashi, S.;Takahashi, K.;Miyanaga, A.;Maeda, Y.;Otsuka-Yao-Matsuo, S.;
10:390:3 Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics
DOI:10.1063/1.3493157 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Toyama, Toshihiko;Takeuchi, Hisazumi;Yamaguchi, Daisaku;Kawasaki, Hayato;Itatani, Kazuki;Okamoto, Hiroaki;
10:390:4 Digestive ripening and green synthesis of ultra-small (r < 2 nm) stable ZnO quantum dots
DOI:10.1016/j.ceramint.2014.05.116 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Jacob, Niya Mary;Thomas, Tiju;
10:390:5 Oriented Attachment Growth of Quantum-Sized CdS Nanorods by Direct Thermolysis of Single-Source Precursor
DOI:10.1021/la1043552 JN:LANGMUIR PY:2011
TC:16 AU: Li, Zhiguo;Sui, Jiehe;Li, Xiaoli;Cai, Wei;
10:390:6 Application of ZnO single crystals for light-induced water splitting under UV irradiation
DOI:10.1016/j.matchemphys.2013.11.031 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Suhak, Yuriy;Izdebska, Katarzyna;Skupinski, Pawel;Wierzbicka, Aleksandra;Reszka, Anna;Sybilski, Piotr;Kowalski, Bogdan J.;Mycielski, Andrzej;Zytkiewicz, Zbigniew R.;Soszko, Michal;Suchocki, Andrzej;
10:390:7 Observation of dark exciton luminescence from ZnO nanocrystals in the quantum confinement regime
DOI:10.1103/PhysRevB.83.165435 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Yamamoto, Sekika;Mishina, Tomobumi;
10:390:8 Temperature and size dependence of time-resolved exciton recombination in ZnO quantum dots
DOI:10.1063/1.3669511 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Musa, I.;Massuyeau, F.;Cario, L.;Duvail, J. L.;Jobic, S.;Deniard, P.;Faulques, E.;
10:390:9 UV luminescent organic-capped ZnO quantum dots synthesized by alkoxide hydrolysis with dilute water
DOI:10.1016/j.jcis.2010.12.014 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:8 AU: Omata, Takahisa;Takahashi, Kazuyuki;Hashimoto, Shinichi;Maeda, Yasuhiro;Nose, Katsuhiro;Otsuka-Yao-Matsuo, Shinya;Kanaori, Kenji;
10:390:10 Quantum dot phosphors and their application to inorganic electroluminescence device
DOI:10.1016/j.tsf.2011.10.057 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Omata, Takahisa;Tani, Yuki;Kobayashi, Satoshi;Otsuka-Yao-Matsuo, Shinya;
10:390:11 Synthesis of LiGaO2 nanocrystals and their application toward bright UV emission from ZnO quantum dots
DOI:10.1016/j.jcrysgro.2011.06.032 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Omata, Takahisa;Tazuke, Atsushi;Nose, Katsuhiro;Otsuka-Yao-Matsuo, Shinya;
10:390:12 Mapping emissive channels of quantum dots: Influence of size and environment on energy transfer in the time domain
DOI:10.1063/1.3497269 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Faulques, E.;Massuyeau, F.;Wang, Q.;Seo, D. -K.;Jobic, S.;
10:391:1 Focused-ion-beam Assisted Growth, Patterning, and Narrowing the Size Distributions of ZnO Nanowires for Variable Optical Properties and Enhanced Nonmechanical Energy Conversion
DOI:10.1021/cm401195v JN:CHEMISTRY OF MATERIALS PY:2013
TC:7 AU: Wang, Xianying;Xie, Shufang;Liu, Jian;Kucheyev, Sergei O.;Wang, Y. Morris;
10:391:2 Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation
DOI:10.1002/adfm.201001058 JN:ADVANCED FUNCTIONAL MATERIALS PY:2010
TC:30 AU: Yuan, Dajun;Guo, Rui;Wei, Yaguang;Wu, Wenzhuo;Ding, Yong;Wang, Zhong Lin;Das, Suman;
10:391:3 Fabrication of Patterned Polymer Nanowire Arrays
DOI:10.1021/nn103319p JN:ACS NANO PY:2011
TC:12 AU: Fang, Hao;Yuan, Dajun;Guo, Rui;Zhang, Su;Han, Ray P. S.;Das, Suman;Wang, Zhong Lin;
10:391:4 Highly controllable and reproducible ZnO nanowire arrays growth with focused ion beam and low-temperature hydrothermal method
DOI:10.1016/j.apsusc.2014.08.088 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Diao, Kaidi;Zhang, Jicheng;Zhou, Minjie;Tang, Yongjian;Wang, Shuxia;Cui, Xudong;
10:391:5 Effects of annealing temperature on the properties of ZnO/SnO2 core/shell nanorod arrays
DOI:10.1016/j.matlet.2012.07.037 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Tu, Ya-Fang;Fu, Qiu-Ming;Sang, Jian-Ping;Tan, Zhi-Jie;Zou, Xian-Wu;
10:391:6 Microstructure evolution and enhanced green luminescence in P-doped ZnO nanowires
DOI:10.1016/j.matlet.2011.11.100 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Liu, J.;Xie, S. F.;Cao, Y.;Chen, Y. L.;Zeng, H. D.;Yang, J. H.;Liu, F.;Wang, X. Y.;
10:391:7 Batteryless Chemical Detection with Semiconductor Nanowires
DOI:10.1002/adma.201003221 JN:ADVANCED MATERIALS PY:2011
TC:11 AU: Wang, Xianying;Wang, Yinmin;Aberg, Daniel;Erhart, Paul;Misra, Nipun;Noy, Aleksandr;Hamza, Alex V.;Yang, Junhe;
10:391:8 Heterojunction solar cells with integrated Si and ZnO nanowires and a chalcopyrite thin film
DOI:10.1016/j.matchemphys.2013.03.053 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Karaagac, Hakan;Parlak, Mehmet;Yengel, Emre;Islam, M. Saif;
10:391:9 Kinetics of Congruent Vaporization of ZnO Islands
DOI:10.1103/PhysRevLett.107.146101 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:2 AU: Kim, B. J.;Garcia, R. E.;Stach, E. A.;
10:391:10 Effect of phosphorus incorporation on the morphology and optical properties of ZnO nanorods
DOI:10.1016/j.materresbull.2010.12.026 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:5 AU: Fan, Donghua;Zhang, Rong;Wang, Xianghu;
10:392:1 A template-free sol-gel technique for controlled growth of ZnO nanorod arrays
DOI:10.1016/j.apsusc.2011.01.112 JN:APPLIED SURFACE SCIENCE PY:2011
TC:17 AU: Huang, N.;Zhu, M. W.;Gao, L. J.;Gong, J.;Sun, C.;Jiang, X.;
10:392:2 Effect of Eosin Y Dye on Electrical Properties of ZnO Film Synthesized by Sol-Gel Technique
DOI:10.1007/s11664-013-2925-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:4 AU: Rani, Mamta;Tripathi, S. K.;
10:392:3 Structure and CO gas sensing properties of electrospun TiO2 nanofibers
DOI:10.1016/j.matlet.2009.10.052 JN:MATERIALS LETTERS PY:2010
TC:37 AU: Park, Jin-Ah;Moon, Jaehyun;Lee, Su-Jae;Kim, Seong Hyun;Zyung, Taehyoung;Chu, Hye Yong;
10:392:4 Synthesis of ZnO Crystals with Octahedral Morphology through Thermal Evaporation Technique in Air
DOI:10.2320/matertrans.M2013402 JN:MATERIALS TRANSACTIONS PY:2014
TC:0 AU: Kim, Min-Sung;Lee, Geun-Hyoung;
10:392:5 Wet chemical growth of zinc oxide octahedrons and their optical property
DOI:10.1016/j.matlet.2011.11.034 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Samanta, Pijus Kanti;Chaudhuri, Partha Roy;
10:392:6 Solution phase synthesis of ZnO nanopencils and their optical property
DOI:10.1016/j.matlet.2012.10.014 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Samanta, Pijus Kanti;Mishra, Santanu;
10:392:7 Microstructure evolution of zinc oxide films derived from dip-coating sol-gel technique: formation of nanorods through orientation attachment
DOI:10.1088/0957-4484/22/26/265612 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Huang, Nan;Sun, Chao;Zhu, Mingwei;Zhang, Bin;Gong, Jun;Jiang, Xin;
10:392:8 Properties of composite films of titania nanofibers and Safranin O dye
DOI:10.1016/j.synthmet.2010.10.006 JN:SYNTHETIC METALS PY:2010
TC:2 AU: Drabik, M.;Touskova, J.;Hanus, J.;Kobayashi, H.;Biederman, H.;
10:392:9 Growth of ZnO nanorod arrays by sol-gel method: transition from two-dimensional film to one-dimensional nanostructure
DOI:10.1007/s00339-010-6041-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Zhu, M. W.;Huang, N.;Gong, J.;Zhang, B.;Wang, Z. J.;Sun, C.;Jiang, X.;
10:392:10 Mechanical characterization of aluminum doped zinc oxide (Al:ZnO) nanorods prepared by sol-gel method
DOI:10.1016/j.apsusc.2012.11.101 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Kumar, A.;Huang, N.;Staedler, T.;Sun, C.;Jiang, X.;
10:392:11 Characterization of hexagonal ZnO nanostructures prepared by hexamethylenetetramine (HMTA) assisted wet chemical method
DOI:10.1016/j.matlet.2014.03.100 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Sornalatha, D. Jesuvathy;Murugakoothan, P.;
10:392:12 The effect of multiwalled carbon nanotube doping on the CO gas sensitivity of TiO2 xerogel composite film
DOI:10.1016/j.apsusc.2012.10.020 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Lee, Jin-Seok;Ha, Tae-Jung;Hong, Min-Hee;Park, Chang-Sun;Park, Hyung-Ho;
10:393:1 Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing
DOI:10.1063/1.3337099 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Liu, H. F.;Chua, S. J.;
10:393:2 Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices
DOI:10.1063/1.4863409 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Liu, Shuai;Liu, Shu-Liang;Long, Yun-Ze;Liu, Ling-Zhi;Zhang, Hong-Di;Zhang, Jun-Cheng;Han, Wen-Peng;Liu, Yi-Chen;
10:393:3 Photoluminescence and highly selective photoresponse of ZnO nanorod arrays
DOI:10.1016/j.optmat.2013.03.018 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Yi, Fang;Huang, Yunhua;Zhang, Zheng;Zhang, Qi;Zhang, Yue;
10:393:4 Temperature dependent photoluminescence studies of ZnO thin film grown on (111) YSZ substrate
DOI:10.1016/j.jcrysgro.2011.01.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Sentosa, D.;Liu, B.;Wong, L. M.;Lim, Y. V.;Wong, T. I.;Foo, Y. L.;Sun, H. D.;Wang, S. J.;
10:393:5 Spray pyrolized Ag-N co-doped p-type ZnO thin films' preparation and study of their structural, surface morphology and opto-electrical properties
DOI:10.1016/j.tsf.2013.02.024 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Islam, M. Bodiul;Rahman, M. Mozibur;Khan, M. K. R.;Halim, M. A.;Sattar, M. A.;Saha, Dilip Kumar;Hakim, M. A.;
10:393:6 Investigations on the growth and optical properties of one dimensional ZnO nanostructures grown by radio frequency magnetron sputter deposition
DOI:10.1016/j.materresbull.2013.05.089 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:4 AU: Venkatesh, P. Sundara;Ramakrishnan, V.;Jeganathan, K.;
10:393:7 Control of N/N-2 species ratio in NO plasma for p-type doping of ZnO
DOI:10.1063/1.3626069 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Chen, Xingyou;Zhang, Zhenzhong;Yao, Bin;Jiang, Mingming;Wang, Shuangpeng;Li, Binghui;Shan, Chongxin;Liu, Lei;Zhao, Dongxu;Zhao, Haifeng;Shen, Dezhen;
10:393:8 Comparative study of ZnO thin film and nanopillar growth on YSZ(111) and sapphire (0001) substrates by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2010.03.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Verma, Himanshu;Mukherjee, Devajyoti;Witanachchi, Sarath;Mukherjee, Pritish;Batzill, Matthias;
10:393:9 Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods
DOI:10.1016/j.optmat.2012.05.030 JN:OPTICAL MATERIALS PY:2012
TC:10 AU: Lv, Jianguo;Liu, Changlong;Gong, Wanbing;Zi, Zhenfa;Chen, Xiaoshuang;Huang, Kai;Wang, Tao;He, Gang;Shi, Shiwei;Song, Xueping;Sun, Zhaoqi;
10:393:10 Local Vibration Modes in Phosphorus-Doped ZnO Nanostructure
DOI:10.1080/10584587.2012.685695 JN:INTEGRATED FERROELECTRICS PY:2012
TC:0 AU: Lin, Z. G.;Zhang, C. Q.;Liang, Z. H.;Liu, R.;Chi, L. F.;Wu, P.;
10:393:11 Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering
DOI:10.1016/j.jcrysgro.2011.03.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Liu, H. F.;Chua, S. J.;
10:393:12 Effect of microwave remote plasma and radiofrequency plasma on the photoluminescence of (0001) epitaxial ZnO films
DOI:10.1016/j.matchemphys.2014.05.040 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Margueron, Samuel;Ropers, Solene;Maertens, Alban;Legrani, Ouarda;Genty, Frederic;Bartasyte, Ausrine;Belmonte, Thierry;
10:393:13 Activation of phosphorous doping in high quality ZnO thin film grown on Yttria-stabilized zirconia (111) by thermal treatment
DOI:10.1016/j.tsf.2011.06.010 JN:THIN SOLID FILMS PY:2011
TC:0 AU: Sentosa, D.;Liu, B.;Wong, L. M.;Lim, Y. V.;Wong, T. I.;Foo, Y. L.;Sun, H. D.;Wang, S. J.;
10:394:1 Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices
DOI:10.1063/1.4816002 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:10 AU: Zhou, Jian;He, Xingli;Jin, Hao;Wang, Wenbo;Feng, Bin;Dong, Shurong;Wang, Demiao;Zou, Guangyi;Luo, J. K.;
10:394:2 ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer
DOI:10.1063/1.4807124 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lai, Wei-Chih;Chen, Jiun-Ting;Yang, Ya-Yu;
10:394:3 High sensitivity humidity sensors using flexible surface acoustic wave devices made on nanocrystalline ZnO/polyimide substrates
DOI:10.1039/c3tc31126k JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:11 AU: He, X. L.;Li, D. J.;Zhou, J.;Wang, W. B.;Xuan, W. P.;Dong, S. R.;Jin, H.;Luo, J. K.;
10:394:4 Bendable ZnO thin film surface acoustic wave devices on polyethylene terephthalate substrate
DOI:10.1063/1.4879850 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: He, Xingli;Guo, Hongwei;Chen, Jinkai;Wang, Wenbo;Xuan, Weipeng;Xu, Yang;Luo, Jikui;
10:394:5 Thermal annealing effect on ZnO surface acoustic wave-based ultraviolet light sensors on glass substrates
DOI:10.1063/1.4880898 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Wang, Wenbo;Gu, Hang;He, Xingli;Xuan, Weipeng;Chen, Jinkai;Wang, Xiaozhi;Luo, J. K.;
10:394:6 Highly sensitive ultraviolet detector using a ZnO/Si layered SAW oscillator
DOI:10.1016/j.tsf.2009.07.207 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Wei, Ching-Liang;Chen, Ying-Chung;Cheng, Chien-Chuan;Kao, Kuo-Sheng;Cheng, Da-Long;Cheng, Po-Shu;
10:394:7 Bendable transparent ZnO thin film surface acoustic wave strain sensors on ultra-thin flexible glass substrates
DOI:10.1039/c4tc01307g JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Chen, Jinkai;He, Xingli;Wang, Wenbo;Xuan, Weipeng;Zhou, Jian;Wang, Xiaozhi;Dong, S. R.;Garner, Sean;Cimo, Pat;Luo, J. K.;
10:394:8 Influence of thermal annealing and ion irradiation on zinc silicate phases in nanocomposite ZnO-SiOx thin films
DOI:10.1016/j.apsusc.2014.09.003 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Valiveti, Venkata Siva Kumar;Singh, F.;Ojha, S.;Kanjilal, D.;
10:394:9 14%-efficient flexible CdTe solar cells on ultra-thin glass substrates
DOI:10.1063/1.4870834 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Rance, W. L.;Burst, J. M.;Meysing, D. M.;Wolden, C. A.;Reese, M. O.;Gessert, T. A.;Metzger, W. K.;Garner, S.;Cimo, P.;Barnes, T. M.;
10:395:1 Hierarchical SnO2 Nanoparticle-ZnO Nanorod Photoanode for Improving Transport and Life Time of Photoinjected Electrons in Dye-Sensitized Solar Cell
DOI:10.1021/am302729v JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:21 AU: Nguyen Khac Huu;Son, Dae-Yong;Jang, In-Hyuk;Lee, Chang-Ryul;Park, Nam-Gyu;
10:395:2 Morphology-controlled synthesis of SnO2 nanostructures using hydrothermal method and their photocatalytic applications
DOI:10.1016/j.ceramint.2013.03.101 JN:CERAMICS INTERNATIONAL PY:2013
TC:21 AU: Talebian, Nasrin;Jafarinezhad, Farzaneh;
10:395:3 Catalyst free single-step fabrication of SnO2/ZnO core-shell nanostructures
DOI:10.1016/j.ceramint.2013.11.124 JN:CERAMICS INTERNATIONAL PY:2014
TC:7 AU: Tharsika, T.;Haseeb, A. S. M. A.;Akbar, S. A.;Sabri, M. F. M.;
10:395:4 Co-synthesis of ZnO/SnO2 mixed nanowires via a single-step carbothermal reduction method
DOI:10.1016/j.ceramint.2013.08.142 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Tharsika, T.;Haseeb, A. S. M. A.;Akbar, S. A.;Sabri, M. F. M.;
10:395:5 Facile hydrothermal synthesis of crystalline Ta2O5 nanorods, MTaO3 (M = H, Na, K, Rb) nanoparticles, and their photocatalytic behaviour
DOI:10.1039/c4ta00183d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:6 AU: Goempel, Dorothea;Tahir, Muhammad Nawaz;Panthoefer, Martin;Mugnaioli, Enrico;Brandscheid, Robert;Kolb, Ute;Tremel, Wolfgang;
10:395:6 Interaction of Alkaline Metal Cations with Oxidic Surfaces: Effect on the Morphology of SnO2 Nanoparticles
DOI:10.1021/la902994r JN:LANGMUIR PY:2010
TC:14 AU: Birkel, Alexander;Loges, Niklas;Mugnaioli, Enrico;Branscheid, Robert;Koll, Dominik;Frank, Stefan;Panthoefer, Martin;Tremel, Wolfgang;
10:395:7 Green and facile synthesis of porous ZnCO3 as a novel anode material for advanced lithium-ion batteries
DOI:10.1016/j.matlet.2013.12.028 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Zhang, Ruihan;Zhang, Fan;Feng, Jinkui;Qian, Yitai;
10:395:8 Hierarchical ZnO@NiO core-shell nanorod array as high performance anode material for lithium-ion batteries
DOI:10.1016/j.matlet.2013.08.058 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Fang, J.;Yuan, Y. F.;Wang, L. K.;Ni, H. L.;Zhu, H. L.;Gui, J. S.;Yang, J. L.;Chen, Y. B.;Guo, S. Y.;
10:395:9 Improved electrochemical performance of CuCrO2 anode with CNTs as conductive agent for lithium ion batteries
DOI:10.1016/j.matlet.2013.01.103 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Zhu, Xiao-Dong;Tian, Jing;Le, Shi-Ru;Zhang, Nai-Qing;Sun, Ke-Ning;
10:395:10 Synthesis of SnO2 nanowires their structural and H-2 gas sensing properties
DOI:10.1016/j.ceramint.2013.01.112 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: El-Maghraby, E. M.;Qurashi, Ahsanulhaq;Yamazaki, Toshinari;
10:395:11 Enhanced electrochemical performance of Ag-coated CuCr2O4 as anode material for lithium-ion batteries
DOI:10.1016/j.ceramint.2014.04.025 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Lao, Mengmeng;Shu, Jie;Shao, Lianyi;Lin, Xiaoting;Wu, Kaiqiang;Shui, Miao;Li, Peng;Long, Nengbing;Ren, Yuanlong;
10:395:12 Enhanced electrochemical performances of CuCrO2-CNTs nanocomposites anodes by in-situ hydrothermal synthesis for lithium ion batteries
DOI:10.1016/j.matlet.2013.05.137 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zhu, Xiao-Dong;Tian, Jing;Le, Shi-Ru;Chen, Jin-Run;Sun, Ke-Ning;
10:395:13 Preparation of Pyrochlore Potassium Tantalate Thin Films on Ta/ITO Glass via Mild Hydrothermal Growth
DOI:10.2320/matertrans.MC200914 JN:MATERIALS TRANSACTIONS PY:2010
TC:2 AU: Hashizume, T.;Saiki, A.;Terayama, K.;
10:396:1 Programmable Direct-Printing Nanowire Electronic Components
DOI:10.1021/nl904190y JN:NANO LETTERS PY:2010
TC:1 AU: Il Lee, Tae;Choi, Won Jin;Moon, Kyeong Ju;Choi, Ji Hyuk;Kar, Jyoti Prakash;Das, Sachindra Nath;Kim, Youn Sang;Baik, Hong Koo;Myoung, Jae Min;
10:396:2 Intrinsic memory behavior of rough silicon nanowires and enhancement via facile Ag NPs decoration
DOI:10.1039/c1jm10473j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Choi, Ji-Hyuk;Sung, Jinwoo;Moon, Kyeong-Ju;Jeon, Joohee;Kang, Youn Hee;Il Lee, Tae;Park, Cheolmin;Myoung, Jae-Min;
10:396:3 One-Dimensional Semiconductor Nanostructure Based Thin-Film Partial Composite Formed by Transfer Implantation for High-Performance Flexible and Printable Electronics at Low Temperature
DOI:10.1021/nn102104k JN:ACS NANO PY:2011
TC:8 AU: Moon, Kyeong-Ju;Lee, Tae-Il;Choi, Ji-Hyuk;Jeon, Joohee;Kang, Youn Hee;Kar, Jyoti Prakash;Kang, Jung Han;Yun, Ilgu;Myoung, Jae-Min;
10:396:4 A simple and rapid formation of wet chemical etched silicon nanowire films at the air-water interface
DOI:10.1039/c1jm12167g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:3 AU: Lee, Tae Il;Choi, Won Jin;Moon, Kyeong-Ju;Choi, Ji-Hyuk;Park, Jee Ho;Jeong, Unyong;Baik, Hong Koo;Myoung, Jae Min;
10:396:5 Kinetically controlled way to create highly uniform mono-dispersed ZnO sub-microrods for electronics
DOI:10.1039/c2jm34050j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:6 AU: Jang, Woo Soon;Il Lee, Tea;Oh, Jin Young;Hwang, Sung Hwan;Shon, Sung Woo;Kim, Do Hyang;Xia, Younan;Myoung, Jea Min;Baik, Hong Koo;
10:396:6 Logic inverters based on the property modulated Si nanowires by controlled surface modifications
DOI:10.1039/c1jm14719f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:4 AU: Moon, Kyeong-Ju;Lee, Tae-Il;Lee, Woong;Myoung, Jae-Min;
10:396:7 Electrical Contact Tunable Direct Printing Route for a ZnO Nanowire Schottky Diode
DOI:10.1021/nl101684c JN:NANO LETTERS PY:2010
TC:15 AU: Lee, Tae Il;Choi, Won Jin;Kar, Jyoti Prakash;Kang, Youn Hee;Jeon, Joo Hee;Park, Jee Ho;Kim, Youn Sang;Baik, Hong Koo;Myoung, Jae Min;
10:396:8 Electricity generated from ambient heat across a silicon surface
DOI:10.1063/1.4825269 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Tai, Guoan;Xu, Zihan;Liu, Jinsong;
10:396:9 Intrinsic Ge nanowire nonvolatile memory based on a simple core-shell structure
DOI:10.1088/0957-4484/25/7/075201 JN:NANOTECHNOLOGY PY:2014
TC:3 AU: Chen, Wen-Hua;Liu, Chang-Hai;Li, Qin-Liang;Sun, Qi-Jun;Liu, Jie;Gao, Xu;Sun, Xuhui;Wang, Sui-Dong;
10:397:1 Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
DOI:10.1063/1.4773367 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Goh, E. S. M.;Yang, H. Y.;Han, Z. J.;Chen, T. P.;Ostrikov, K.;
10:397:2 Ultraviolet Electroluminescence from Randomly Assembled n-SnO2 Nanowiresp-GaN:Mg Heterojunction
DOI:10.1021/am1000294 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:22 AU: Yang, H. Y.;Yu, S. F.;Liang, H. K.;Lau, S. P.;Pramana, S. S.;Ferraris, C.;Cheng, C. W.;Fan, H. J.;
10:397:3 Surface localized exciton emission from undoped SnO2 nanocrystal films
DOI:10.1063/1.3524196 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Pan, S. S.;Tian, Y. H.;Luo, Y. Y.;Zhang, Y. X.;Wang, S.;Li, G. H.;
10:397:4 Color tunable light-emitting diodes based on p(+)-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions
DOI:10.1063/1.3459963 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Ling, Bo;Zhao, Jun Liang;Sun, Xiao Wei;Tan, Swee Tiam;Kyaw, Aung Ko Ko;Divayana, Yoga;Dong, Zhi Li;
10:397:5 Growth ambient dependence of defects, structural disorder and photoluminescence in SnO2 films deposited by reactive magnetron sputtering
DOI:10.1016/j.jallcom.2013.08.135 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:7 AU: Bansal, Shikha;Pandya, D. K.;Kashyap, Subhash C.;Haranath, D.;
10:397:6 Crystallite size-modulated exciton emission in SnO2 nanocrystalline films grown by sputtering
DOI:10.1063/1.4800896 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Pan, Shu Sheng;Yu, Siu Fung;Zhang, Yun Xia;Luo, Yuan Yuan;Wang, Shuan;Xu, Jun Min;Li, Guang Hai;
10:397:7 X-ray absorption spectroscopy study of thermally annealed Cu-Al-O thin films
DOI:10.1016/j.matchemphys.2014.01.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Hsieh, Ping-Hung;Lu, Yang-Ming;Hwang, Weng-Sing;Jang, Wei-Luen;Dung, Chung-Li;Chan, Ting-Shan;
10:397:8 Study of the absorption edge of SnO2 nanoparticles embedded in silica films
DOI:10.1016/j.jnoncrysol.2010.12.045 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:7 AU: Lorenzi, R.;Lauria, A.;Mochenova, N.;Chiodini, N.;Paleari, A.;
10:397:9 Effect of Sb doping on the opto-electronic properties of SnO2 nanowires
DOI:10.1016/j.tsf.2012.07.001 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Kim, Yoon Chul;Yoon, Chang Hoon;Park, Jaehyun;Yoon, Jangyeol;Han, Noh Soo;Song, Jae Kyu;Park, Seung Min;Ha, Jeong Sook;
10:397:10 A route to improved extraction efficiency of light-emitting diodes
DOI:10.1063/1.3301614 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Zhu, H.;Shan, C. X.;Wang, L. K.;Yang, Y.;Zhang, J. Y.;Yao, B.;Shen, D. Z.;Fan, X. W.;
10:397:11 Electroluminescence from AlN nanowires grown on p-SiC substrate
DOI:10.1063/1.3513308 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Yang, H. Y.;Yu, S. F.;Hui, Y. Y.;Lau, S. P.;
10:397:12 Ultraviolet Electroluminescence from Randomly Assembled n-SnO2 Nanowiresp-GaN:Mg Heterojunction (vol 2, pg 1191, 2010)
DOI:10.1021/am1002734 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:1 AU: Yang, H. Y.;Yu, S. F.;Liang, H. K.;Lau, S. P.;Pramana, S. S.;Ferraris, C.;Cheng, C. W.;Fan, H. J.;
10:398:1 Aqueous synthesis of interconnected ZnO nanowires using spray pyrolysis deposited seed layers
DOI:10.1016/j.matlet.2009.10.065 JN:MATERIALS LETTERS PY:2010
TC:41 AU: Breedon, Michael;Rahmani, Mohammad Bagher;Keshmiri, Sayyed-Hossein;Wlodarski, Wojtek;Kalantar-zadeh, Kourosh;
10:398:2 A white-emitting ZnO-Au nanocomposite and its SERS applications
DOI:10.1016/j.apsusc.2012.04.039 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Sun, Lanlan;Zhao, Dongxu;Ding, Meng;Zhao, Haifeng;Zhang, Zhenzhong;Li, Binghui;Shen, Dezhen;
10:398:3 Synthesis of hybrid Au-ZnO nanoparticles using a one pot polyol process
DOI:10.1016/j.matchemphys.2014.05.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Mezni, Amine;Mlayah, Adnen;Serin, Virginie;Smiri, Leila Samia;
10:398:4 Facile Route for the Synthesis of a Vertically Aligned ZnO-PANI Nanohybrid Film for Polyphenol Sensing
DOI:10.1021/am401257q JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:8 AU: Singh, Jagvir;Bhondekar, Amol Purushottam;Singla, Madan Lal;Sharma, Anupama;
10:398:5 I-V characteristics of the p-n junction between vertically aligned ZnO nanorods and polyaniline thin film
DOI:10.1016/j.synthmet.2009.11.037 JN:SYNTHETIC METALS PY:2010
TC:31 AU: Li, Yinhua;Gong, Jian;McCune, Mallarie;He, Gaohong;Deng, Yulin;
10:398:6 Fabrication of two-dimensional zinc oxide nanorod patterns and their application for optical diffraction grating effect
DOI:10.1007/s10853-014-8541-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Kim, Un Jeong;Kim, Sun Il;Hwang, Sungwoo;Hur, Jaehyun;
10:398:7 Facile synthesis of ZnO nanocrystals in polyol
DOI:10.1016/j.matlet.2012.07.054 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Mezni, Amine;Kouki, Faycal;Romdhane, Samir;Warot-Fonrose, Benedicte;Joulie, Sebastien;Mlayah, Adnen;Smiri, Leila Samia;
10:398:8 Controllable growth of flowerlike ZnO nanostructures by combining laser direct writing and hydrothermal synthesis
DOI:10.1016/j.matlet.2011.09.008 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Guo, X. D.;Pi, H. Y.;Zhao, Q. Z.;Li, R. X.;
10:398:9 DNA-based fabrication of density-controlled vertically aligned ZnO nanorod arrays and their SERS applications
DOI:10.1039/c1jm10830a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Sun, Lanlan;Zhao, Dongxu;Zhang, Zhenzhong;Li, Binghui;Shen, Dezhen;
10:399:1 Self-formation of sub-10 nm nanogaps based on silicidation
DOI:10.1088/0957-4484/25/11/115201 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Tang, Xiaohui;Francis, Laurent A.;Dutu, Constantin Augustin;Reckinger, Nicolas;Raskin, Jean-Pierre;
10:399:2 Suspended and localized single nanostructure growth across a nanogap by an electric field
DOI:10.1088/0957-4484/22/40/405301 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Lee, Chung-Hoon;Han, Jun Hyun;Schneider, Susan C.;Josse, Fabien;
10:399:3 Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators
DOI:10.1063/1.3441406 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: George, H. Bola;Hoogerheide, David P.;Madi, Charbel S.;Bell, David C.;Golovchenko, Jene A.;Aziz, Michael J.;
10:399:4 Direct Fabrication of Zero- and One-Dimensional Metal Nanocrystals by Thermally Assisted Electromigration
DOI:10.1021/nn901674p JN:ACS NANO PY:2010
TC:6 AU: Yuk, Jong Min;Kim, Kwanpyo;Lee, Zonghoon;Watanabe, Masashi;Zettl, A.;Kim, Tae Whan;No, Young Soo;Choi, Won Kook;Lee, Jeong Yong;
10:399:5 A suspended nanogap formed by field-induced atomically sharp tips
DOI:10.1063/1.4764562 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Han, Jun Hyun;Song, Kyung;Radhakrishnan, Shankar;Oh, Sang Ho;Lee, Chung Hoon;
10:399:6 Negative Differential Resistance Behavior and Memory Effect in Laterally Bridged ZnO Nanorods Grown by Hydrothermal Method
DOI:10.1021/am404875s JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Chuang, Ming-Yueh;Chen, Ying-Chih;Su, Yan-Kuin;Hsiao, Chih-Hung;Huang, Chien-Sheng;Tsai, Jeng-Je;Yu, Hsin-Chieh;
10:399:7 Tunable nanometer electrode gaps by MeV ion irradiation
DOI:10.1063/1.3702778 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Cheang-Wong, J. -C.;Narumi, K.;Schuermann, G. M.;Aziz, M. J.;Golovchenko, J. A.;
10:399:8 Thermal activation and saturation of ion beam sculpting
DOI:10.1063/1.3569705 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Hoogerheide, David P.;George, Bola;Golovchenko, Jene A.;Aziz, Michael J.;
10:399:9 High voltage-derived enhancement of electric conduction in nanogap devices for detection of prostate-specific antigen
DOI:10.1063/1.3464160 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Park, Hyung Ju;Chi, Young Shik;Choi, Insung S.;Yun, Wan Soo;
10:399:10 Long nanoscale gaps on III-V substrates by electron beam lithography
DOI:10.1116/1.4766881 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Thoms, Stephen;Macintyre, Douglas S.;
10:399:11 Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment
DOI:10.1088/0957-4484/22/5/055704 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Lee, Chung-Hoon;Ritz, Clark S.;Huang, Minghuang;Ziwisky, Michael W.;Blise, Robert J.;Lagally, Max G.;
10:399:12 Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography
DOI:10.1088/0957-4484/23/12/125302 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Manheller, Marcel;Trellenkamp, Stefan;Waser, Rainer;Karthaeuser, Silvia;
10:399:13 Current-induced nanogap formation and graphitization in boron-doped diamond films
DOI:10.1063/1.4766346 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Seshan, V.;Arroyo, C. R.;Castellanos-Gomez, A.;Prins, F.;Perrin, M. L.;Janssens, S. D.;Haenen, K.;Nesladek, M.;Sudhoelter, E. J. R.;de Smet, L. C. P. M.;van der Zant, H. S. J.;Dulic, D.;
10:399:14 Fabrication of nanopore on pyramid
DOI:10.1016/j.apsusc.2014.03.058 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Choi, Seong Soo;Park, Myong-Jin;Yamaguchi, Tokutaro;Kim, Sung-In;Park, Kyung-Jin;Park, Nam Kyoo;
10:399:15 Electrical properties of high density arrays of silicon nanowire field effect transistors
DOI:10.1063/1.4824367 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Kim, Hye-Young;Lee, Kangho;Lee, Jae Woo;Kim, Sangwook;Kim, Gyu-Tae;Duesberg, Georg S.;
10:400:1:1 Fractal and multifractal analysis of LiF thin film surface
DOI:10.1016/j.apsusc.2012.08.053 JN:APPLIED SURFACE SCIENCE PY:2012
TC:23 AU: Yadav, R. P.;Dwivedi, S.;Mittal, A. K.;Kumar, M.;Pandey, A. C.;
10:400:1:2 Insight on Fractal Assessment Strategies for Tin Dioxide Thin Films
DOI:10.1021/nn901635f JN:ACS NANO PY:2010
TC:25 AU: Chen, Zhiwen;Pan, Dengyu;Zhao, Bing;Ding, Guoji;Jiao, Zheng;Wu, Minghong;Shek, Chan-Hung;Wu, Lawrence C. M.;Lai, Joseph K. L.;
10:400:1:3 On the scaling law analysis of nanodimensional LiF thin film surfaces
DOI:10.1016/j.matlet.2014.04.046 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Yadav, R. P.;Kumar, Manvendra;Mittal, A. K.;Dwivedi, S.;Pandey, Avinash C.;
10:400:2:1 Comparison of surface fractal dimensions of chromizing coating and P110 steel for corrosion resistance estimation
DOI:10.1016/j.apsusc.2014.05.062 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Lin, Naiming;Guo, Junwen;Xie, Faqin;Zou, Jiaojuan;Tian, Wei;Yao, Xiaofei;Zhang, Hongyan;Tang, Bin;
10:400:2:2 Surface fractal dimensions and textural properties of mesoporous alkaline-earth hydroxyapatites
DOI:10.1016/j.apsusc.2013.04.042 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Vilchis-Granados, J.;Granados-Correa, F.;Barrera-Diaz, C. E.;
10:400:2:3 Surface properties of porous hydroxyapatite derived from natural phosphate
DOI:10.1016/j.matchemphys.2012.08.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Rhaiti, H.;Laghzizil, A.;Saoiabi, A.;El Asri, S.;Lahlil, K.;Gacoin, T.;
10:400:2:4 Evolution of fractal features of pores in compacting and sintering process
DOI:10.1016/j.apt.2010.06.012 JN:ADVANCED POWDER TECHNOLOGY PY:2011
TC:6 AU: Kong, Jian;Xu, Caiping;Li, Jianliang;Chen, Wen;Hou, Huaiyu;
10:400:3:1 Fractal analysis of engineering ceramics ground surface
DOI:10.1016/j.apsusc.2012.03.050 JN:APPLIED SURFACE SCIENCE PY:2012
TC:11 AU: Liang, Xiaohu;Lin, Bin;Han, Xuesong;Chen, Shangong;
10:400:3:2 Fractals in several electrode materials
DOI:10.1016/j.apsusc.2014.06.065 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Zhang, Chunyong;Wu, Jingyu;Fu, Degang;
10:400:3:3 A comparative study of correlation methods for determination of fractal parameters in surface characterization
DOI:10.1016/j.apsusc.2013.12.132 JN:APPLIED SURFACE SCIENCE PY:2014
TC:7 AU: Kulesza, Slawomir;Bramowicz, Miroslaw;
10:400:4:1 Box-counting methods to directly estimate the fractal dimension of a rock surface
DOI:10.1016/j.apsusc.2014.06.152 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Ai, T.;Zhang, R.;Zhou, H. W.;Pei, J. L.;
10:400:4:2 Quantitative roughness characterization and 3D reconstruction of electrode surface using cyclic voltammetry and SEM image
DOI:10.1016/j.apsusc.2013.05.071 JN:APPLIED SURFACE SCIENCE PY:2013
TC:10 AU: Dhillon, Shweta;Kant, Rama;
10:400:4:3 Multifractal, structural, and optical properties of Mn-doped ZnO films
DOI:10.1016/j.apsusc.2012.07.150 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Ma, C. Y.;Wang, W. J.;Li, S. L.;Miao, C. Y.;Zhang, Q. Y.;
10:400:4:4 Multifractal analysis of textured silicon surfaces
DOI:10.1016/j.apsusc.2014.02.102 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Jurecka, Stanislav;Angermann, Heike;Kobayashi, Hikaru;Takahashi, Masao;Pincik, Emil;
10:400:5:1 AFM imaging and fractal analysis of surface roughness of AIN epilayers on sapphire substrates
DOI:10.1016/j.apsusc.2014.05.086 JN:APPLIED SURFACE SCIENCE PY:2014
TC:9 AU: Dallaeva, Dinara;Talu, Stefan;Stach, Sebastian;Skarvada, Pavel;Tomanek, Pavel;Grmela, Lubomir;
10:400:5:2 Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma
DOI:10.1016/j.tsf.2012.11.023 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Dallaeva, D. S.;Bilalov, B. A.;Gitikchiev, M. A.;Kardashova, G. D.;Safaraliev, G. K.;Tomanek, P.;Skarvada, P.;Smith, S.;
10:400:6:1 Local multifractal detrended fluctuation analysis for non-stationary image's texture segmentation
DOI:10.1016/j.apsusc.2014.10.065 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Wang, Fang;Li, Zong-shou;Li, Jin-wei;
10:400:6:2 Leaf image segmentation method based on multifractal detrended fluctuation analysis
DOI:10.1063/1.4839815 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Wang, Fang;Li, Jin-Wei;Shi, Wen;Liao, Gui-Ping;
10:401:1 Polymer-assisted precipitation of ZnO nanoparticles with narrow particle size distribution
DOI:10.1016/j.jeurceramsoc.2009.06.010 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:40 AU: Aimable, Anne;Buscaglia, Maria Teresa;Buscaglia, Vincenzo;Bowen, Paul;
10:401:2 Preparation of ZnO nanoparticles using the direct precipitation method in a membrane dispersion micro-structured reactor
DOI:10.1016/j.powtec.2010.04.027 JN:POWDER TECHNOLOGY PY:2010
TC:35 AU: Wang, Yujun;Zhang, Chunling;Bi, Siwei;Luo, Guangsheng;
10:401:3 Electric force microscopy investigations of barrier formations in ZnO-based varistors
DOI:10.1016/j.jeurceramsoc.2009.05.039 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:13 AU: Gheno, S. M.;Kiminami, R. H. G. A.;Morelli, M. R.;Paulin Filho, P. I.;
10:401:4 Aqueous combustion synthesis and characterization of ZnO powders
DOI:10.1016/j.matchemphys.2011.05.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:3 AU: Ianos, Robert;Lazau, Ioan;Pacurariu, Cornelia;Sfirloaga, Paula;
10:401:5 Influence of pH and HPC concentration on the synthesis of zinc oxide photocatalyst particle from zinc-dust waste by hydrothermal treatment
DOI:10.1016/j.apt.2014.03.002 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:1 AU: Sujaridworakun, P.;Natrchalayuth, K.;
10:401:6 Study of effect of planetary ball milling on ZnO nanopowder synthesized by co-precipitation
DOI:10.1016/j.jallcom.2014.08.030 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Shinde, K. P.;Pawar, R. C.;Sinha, B. B.;Kim, H. S.;Oh, S. S.;Chung, K. C.;
10:401:7 Electrochemical synthesis of nanocrystalline zinc oxide and phase transformations of zinc hydroxides
DOI:10.1007/s11051-011-0490-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:5 AU: Grobelsek, Ingrid;Rabung, Benjamin;Quilitz, Mario;Veith, Michael;
10:401:8 Effect of the POSS-Polyimide nanostructure on its mechanical and electrical properties
DOI:10.1016/j.compscitech.2012.05.014 JN:COMPOSITES SCIENCE AND TECHNOLOGY PY:2012
TC:4 AU: Verker, R.;Grossman, E.;Eliaz, N.;
10:401:9 Structural and optical characterization of hydroxy-propyl methyl cellulose-capped ZnO nanorods
DOI:10.1007/s10853-013-7348-z JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:6 AU: Bhatti, H. S.;Kumar, Sunil;Singh, Karamjit;Kavita;
10:401:10 Photodegradation of phenol by zinc oxide, titania and zinc oxide-titania composites: Nanoparticle synthesis, characterization and comparative photocatalytic efficiencies
DOI:10.1016/j.mssp.2014.05.031 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Prabha, I.;Lathasree, S.;
10:401:11 Preparation and characterization of dispersive carbon-coupling ZnO photocatalysts
DOI:10.1016/j.powtec.2012.09.004 JN:POWDER TECHNOLOGY PY:2013
TC:10 AU: Yu, Hsuan-Fu;Chou, Hung-Yu;
10:402:1 A single-source precursor route to Ag/SnO2 heterogeneous nanomaterials and its photo-catalysis in degradation of Conco Red
DOI:10.1016/j.materresbull.2012.06.037 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Yin, Kui;Shao, Mingwang;Zhang, Zhaoshun;Lin, Zhangqing;
10:402:2 Silica-Dendrimer Core-Shell Microspheres with Encapsulated Ultrasmall Palladium Nanoparticles: Efficient and Easily Recyclable Heterogeneous Nanocatalysts
DOI:10.1021/la203066d JN:LANGMUIR PY:2011
TC:29 AU: Biradar, Ankush V.;Biradar, Archana A.;Asefa, Tewodros;
10:402:3 Polarity-controlled ultraviolet/visible light ZnO nanorods/p-Si photodetector
DOI:10.1063/1.4771696 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Xie, Yong;Madel, Manfred;Li, Yujie;Jie, Wanqi;Neuschl, Benjamin;Feneberg, Martin;Thonke, Klaus;
10:402:4 Zn-doped and undoped SnO2 nanoparticles: A comparative structural, optical and LPG sensing properties study
DOI:10.1016/j.materresbull.2012.08.051 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Mishra, R. K.;Sahay, P. P.;
10:402:5 Sensing behaviour of nanosized zinc-tin composite oxide towards liquefied petroleum gas and ethanol
DOI:10.1016/j.materresbull.2010.05.025 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:8 AU: Singh, Ravi Chand;Singh, Onkar;Singh, Manmeet Pal;Chandi, Paramdeep Singh;Thangaraj, R.;
10:402:6 Preparation and characterization of sol-gel Li and Al codoped ZnO thin films
DOI:10.1016/j.matlet.2009.10.030 JN:MATERIALS LETTERS PY:2010
TC:16 AU: Nian, Hongen;Hahn, Sung Hong;Koo, Kee-Kahb;Kim, Jae Seong;Kim, Sunwook;Shin, Eun Woo;Kim, Eui Jung;
10:402:7 Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors
DOI:10.1116/1.3628638 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:7 AU: Periasamy, C.;Chakrabarti, P.;
10:402:8 Enhancement in ethanol sensing response by surface activation of ZnO with SnO2
DOI:10.1016/j.materresbull.2011.12.049 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Singh, Onkar;Singh, Ravi Chand;
10:402:9 Effect of solid inorganic salts on the formation of cubic-like aggregates of ZnSnO3 nanoparticles in solventless, organic-free reactions and their gas sensing behaviors
DOI:10.1016/j.mseb.2012.04.020 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:4 AU: Lu, Lingzhen;Zhang, Aiqin;Xiao, Yuanhua;Gong, Feilong;Jia, Dianzeng;Li, Feng;
10:403:1 Investigation of initial growth of ZnO nanowires and their growth mechanism
DOI:10.1088/0957-4484/21/47/475603 JN:NANOTECHNOLOGY PY:2010
TC:19 AU: Jeong, Jong Seok;Lee, Jeong Yong;
10:403:2 Investigate the interface structure and growth mechanism of high quality ZnO films grown on multilayer graphene layers
DOI:10.1016/j.apsusc.2014.02.088 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Zeng, Yong;Zhao, Yan;Jiang, Yijian;
10:403:3 Horizontally aligned ZnO nanowire transistors using patterned graphene thin films
DOI:10.1063/1.3684614 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Kim, Hwansoo;Park, Ji-Hoon;Suh, Misook;Ahn, Joung Real;Ju, Sanghyun;
10:403:4 Enhanced stability of zinc oxide-based hybrid polymer solar cells by manipulating ultraviolet light distribution in the active layer
DOI:10.1063/1.3593020 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Shao, Shuyan;Liu, Jian;Zhang, Baohua;Xie, Zhiyuan;Wang, Lixiang;
10:403:5 Preparation and performance of ZnO nanowires modified carbon fibers reinforced NiFe2O4 ceramic matrix composite
DOI:10.1016/j.jallcom.2013.06.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Zhang, Lei;Jiao, Wanli;
10:403:6 Construction of 3D Arrays of Cylindrically Hierarchical Structures with ZnO Nanorods Hydrothermally Synthesized on Optical Fiber Cores
DOI:10.1155/2014/925689 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Jing, Weixuan;Qi, Han;Shi, Jiafan;Jiang, Zhuangde;Zhou, Fan;Cheng, Yanyan;
10:403:7 Characterization of ZnO threads obtained using dip coating method at room temperature
DOI:10.1016/j.matlet.2012.03.068 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Alfaro Cruz, M. R.;Ortega Zarzosa, G.;Martinez-Castanon, G. A.;Martinez, J. R.;
10:403:8 Tailoring the synthesis of stainless steel wire mesh-supported ZnO
DOI:10.1016/j.materresbull.2012.02.017 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:8 AU: Vu, Tan T.;del Rio, Laura;Valdes-Solis, Teresa;Marban, Gregorio;
10:403:9 Direct growth of SnO2 nanowires on WOx thin films
DOI:10.1088/0957-4484/23/48/485702 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Lim, Taekyung;Ryu, Seung Yoon;Ju, Sanghyun;
10:403:10 Direct growth of oxide nanowires on CuOx thin film
DOI:10.1088/0957-4484/23/4/045604 JN:NANOTECHNOLOGY PY:2012
TC:1 AU: Kim, Hwansoo;Lee, Byung Kook;An, Ki-Seok;Ju, Sanghyun;
10:404:1 Physical fabrication of colloidal ZnO nanoparticles combining wet-grinding and laser fragmentation
DOI:10.1007/s00339-012-6971-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Wagener, Philipp;Lau, Marcus;Breitung-Faes, Sandra;Kwade, Arno;Barcikowski, Stephan;
10:404:2 Adsorption of sodium dodecyl sulfate (SDS) at ZnSe and alpha-Fe2O3 surfaces: Combining infrared spectroscopy and batch uptake studies
DOI:10.1016/j.jcis.2010.04.011 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:17 AU: Gao, Xiaodong;Chorover, Jon;
10:404:3 Red luminescence of Eu3+ doped ZnO nanoparticles fabricated by laser ablation in aqueous solution
DOI:10.1007/s00339-012-6962-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:9 AU: Katsuki, Daichi;Sato, Toshiyuki;Suzuki, Ryoji;Nanai, Yasushi;Kimura, Seiji;Okuno, Tsuyoshi;
10:404:4 Micronization of red-emitting K2SiF6:Mn4+ phosphor by pulsed laser irradiation in liquid
DOI:10.1016/j.apsusc.2014.09.113 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Nakamura, Toshihiro;Yuan, Ze;Adachi, Sadao;
10:404:5 Fabrication of ZnO nanoparticles by laser ablation of sintered ZnO in aqueous solution
DOI:10.1007/s00339-011-6745-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Kawabata, Keisuke;Nanai, Yasushi;Kimura, Seiji;Okuno, Tsuyoshi;
10:404:6 Laser fragmentation of organic microparticles into colloidal nanoparticles in a free liquid jet
DOI:10.1007/s00339-010-5814-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:8 AU: Wagener, Philipp;Barcikowski, Stephan;
10:404:7 Growth fusion of submicron spherical boron carbide particles by repetitive pulsed laser irradiation in liquid media
DOI:10.1007/s00339-010-5745-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:21 AU: Ishikawa, Yoshie;Feng, Qi;Koshizaki, Naoto;
10:404:8 Preparation of long-afterglow colloidal solution of Sr2MgSi2O7: Eu2+, Dy3+ by laser ablation in liquid
DOI:10.1016/j.apsusc.2010.09.067 JN:APPLIED SURFACE SCIENCE PY:2011
TC:20 AU: Yoshimura, Fumitaka;Nakamura, Kazutaka;Wakai, Fumihiro;Hara, Masahiko;Yoshimoto, Mamoru;Odawara, Osamu;Wada, Hiroyuki;
10:404:9 Preparation of monodispersed Pd nanoparticles by laser ablation at air-suspension interface
DOI:10.1007/s11051-013-1569-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:4 AU: Nishi, Teppei;Suzuki, Noritomo;Takahashi, Naoko;Yano, Kazuhisa;
10:404:10 Ultrafast laser processing of drug particles in water for pharmaceutical discovery
DOI:10.1007/s00339-013-8089-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Ding, Weimeng;Sylvestre, Jean-Philippe;Bouvier, Emmanuelle;Leclair, Gregoire;Meunier, Michel;
10:404:11 Laser-assisted fragmentation of Al particles suspended in liquid
DOI:10.1016/j.apsusc.2013.12.174 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Kuzmin, P. G.;Shafeev, G. A.;Serkov, A. A.;Kirichenko, N. A.;Shcherbina, M. E.;
10:404:12 Amphiphile Disruption of Pathogen Attachment at the Hematite (alpha-Fe2O3)-Water Interface
DOI:10.1021/la104907j JN:LANGMUIR PY:2011
TC:5 AU: Gao, Xiaodong;Chorover, Jon;
10:405:1 Blue emission of ZnO nanoporous arrays membrane prepared by novel catalysis-free vertical pulsed-laser ablation
DOI:10.1016/j.mssp.2010.12.015 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:4 AU: Niu, Haijun;Hao, Lina;Zhang, Milin;Fan, Liquan;Bai, Xuduo;Wang, Wen;
10:405:2 Development of ZnO Nanostructured Films via Sodium Chloride Solution and Investigation of Its Growth Mechanism and Optical Properties
DOI:10.1111/jace.12252 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:0 AU: Wee, R. Q.;Yang, W. F.;Zhou, T. J.;Chen, R.;Sun, H. D.;Wang, C. F.;Lee, Alex Y. S.;Gong, H.;
10:405:3 Electrochemical synthesis of Sn doped ZnO nanowires on zinc foil and their field emission studies
DOI:10.1016/j.tsf.2010.07.106 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Sheini, Farid Jamali;Joag, Dilip S.;More, Mahendra A.;
10:405:4 Oxidation of etched Zn foil for the formation of ZnO nanostructure
DOI:10.1016/j.jallcom.2011.03.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:15 AU: Tan, W. K.;Razak, K. Abdul;Ibrahim, K.;Lockman, Zainovia;
10:405:5 Characterization and antibacterial activity of nanostructured ZnO thin films synthesized through a hydrothermal method
DOI:10.1016/j.powtec.2014.01.010 JN:POWDER TECHNOLOGY PY:2014
TC:3 AU: Ekthammathat, Nuengruethai;Thongtem, Somchai;Thongtem, Titipun;Phuruangrat, Anukorn;
10:405:6 Barrier-controlled electron transport in Sn-doped ZnO polycrystalline thin films
DOI:10.1016/j.tsf.2012.09.006 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Yildiz, A.;Serin, T.;Ozturk, E.;Serin, N.;
10:405:7 Surface-plasmon-assisted modal gain enhancement in Au-hybrid CdSe/ZnS nanocrystal quantum dots
DOI:10.1063/1.3664114 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Kim, Jihoon;Lee, Jaebeom;Kyhm, Kwangseuk;
10:405:8 Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2010.09.034 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Park, Jae Young;Je, Jung Ho;Kim, Sang Sub;
10:405:9 Optical nonlinearities of fine exciton states in a CdSe quantum dot
DOI:10.1063/1.3488019 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Je, Koo-Chul;Shin, In-Chul;Kim, Jihoon;Kyhm, Kwangseuk;
10:405:10 Polarization asymmetry and optical modal gain saturation via carrier-photon interaction in ZnO
DOI:10.1063/1.3473729 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Kim, Bumjin;Kim, Heedae;Park, Sungkyun;Kyhm, Kwangseuk;Cho, Chaeryong;
10:405:11 Ultrasound-assisted synthesis, characterization and optical property of 0-3 wt% Sn-doped ZnO
DOI:10.1016/j.matlet.2012.09.091 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Phuruangrat, Anukorn;Kongnuanyai, Sumittra;Thongtem, Titipun;Thongtem, Somchai;
10:406:1 Band gap and superior refractive index tailoring properties in nanocomposite thin film achieved through sol-gel co-deposition method
DOI:10.1016/j.jallcom.2011.09.051 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Joy, K.;Lakshmy, S. Sujatha;Nair, Prabitha B.;Daniel, Georgi P.;
10:406:2 Structural and nano-composite features of TiO2-Al2O3 powders prepared by sol-gel method
DOI:10.1016/j.jallcom.2010.10.172 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Ahmed, M. A.;Abdel-Messih, M. F.;
10:406:3 Influence of nano boehmite on solid state reaction of alumina and magnesia
DOI:10.1016/j.jallcom.2010.07.186 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Zargar, H. R.;Bayati, M. R.;Rezaie, H. R.;Golestani-Fard, F.;Molaei, Roya;Zanganeh, Saeid;Kajbafvala, Amir;
10:406:4 Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO2 films
DOI:10.1016/j.matchemphys.2012.02.011 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Reddy, A. Sivasankar;Figueiredo, N. M.;Cho, H. C.;Lee, K. S.;Cavaleiro, A.;
10:406:5 Annealing driven performance and optical effects in nanocrystalline SnO2 thin films induced by pulsed delivery
DOI:10.1016/j.jallcom.2011.07.053 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: He, G.;Bhat, G.;Chen, Z. W.;
10:406:6 Experimentation and simulation of tin oxide deposition on glass based on the SnCl4 hydrolysis in an in-line atmospheric pressure chemical vapor deposition reactor
DOI:10.1016/j.tsf.2013.10.114 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Park, Jun-Woo;Kim, Byung-Kuk;Kim, Hyoung June;Park, Seungho;
10:406:7 Preparation of nanostructured Al2O3-TiO2 composite films by MOCVD
DOI:10.1016/j.jallcom.2009.10.200 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Galaviz Perez, J. A.;de Oca Valero, J. A. Montes;Vargas Garcia, J. R.;Rosales, H. J. Dorantes;
10:406:8 Optical band gap tuning of discontinuous [SnO2/Mn](n) multilayers
DOI:10.1016/j.jallcom.2011.07.019 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:2 AU: Saipriya, S.;Singh, R.;
10:406:9 The effect of substrate temperature on the electrical and optic properties of nanocrystalline tin oxide coatings produced by APCVD
DOI:10.1016/j.jcrysgro.2011.06.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Karshoglu, R.;Uysal, M.;Akbulut, H.;
10:406:10 The effect of nano-Cr2O3 on solid-solution assisted sintering of MgO refractories
DOI:10.1016/j.ceramint.2012.04.077 JN:CERAMICS INTERNATIONAL PY:2012
TC:2 AU: Zargar, H. R.;Oprea, C.;Oprea, G.;Troczynski, T.;
10:406:11 Effect of annealing and argon-to-oxygen ratio on sputtered SnO2 thin film sensor for ethylene gas detection
DOI:10.1016/j.matchemphys.2010.07.012 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:10 AU: Ahn, Hosang;Noh, Joo Hyon;Kim, Seon-Bae;Overfelt, Rue A.;Yoon, Young Soo;Kim, Dong-Joo;
10:406:12 Large-area SnO2: F thin films by offline APCVD
DOI:10.1016/j.materresbull.2011.03.031 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:2 AU: Wang, Yan;Wu, Yucheng;Qin, Yongqiang;Zhang, Zhihai;Shi, Chengwu;Zhang, Qingfeng;Li, Changhao;Xia, Xiaohong;Sun, Stanley;Chen, Leon;
10:407:1 Structural, magnetic and XPS studies of Sn0.95Co0.05O2-0.05 and Sn0.95Fe0.05O2-0.05 nanoparticles
DOI:10.1080/14786435.2012.720042 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:0 AU: Kaur, Jasneet;Sahni, Kunal;Kumar, Vikas;Thakur, Kartik;Kotnala, R. K.;Verma, Kuldeep Chand;
10:407:2 Growth of ZnO nanorods on graphite substrate and its application for Schottky diode
DOI:10.1016/j.jallcom.2014.05.110 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Nam, Gwang-Hee;Baek, Seong-Ho;Park, Il-Kyu;
10:407:3 Structure and magnetic properties of Ti1-xCoxO2 nanoparticles prepared by chemical route
DOI:10.1016/j.jcrysgro.2011.02.023 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Sharma, Sunil;Thakur, Nagesh;Kotnala, R. K.;Verma, Kuldeep Chand;
10:407:4 Growth of ZnO nanorod forests and characterization of ZnO-coated nylon fibers
DOI:10.1016/j.matlet.2009.11.005 JN:MATERIALS LETTERS PY:2010
TC:22 AU: Xue, Chao-Hua;Wang, Rui-Li;Zhang, Jing;Jia, Shun-Tian;Tian, Li-Qiang;
10:407:5 Hydrothermal growth of single crystal ZnO nanorods on surface-modified graphite
DOI:10.1007/s13391-013-3049-7 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Sahoo, Trilochan;Jang, Lee-Woon;Jeon, Dae-Woo;Yu, Yeon-Tae;Lee, In-Hwan;
10:407:6 Morphological and ferroelectric studies of Li-doped ZnO thin films
DOI:10.1016/j.matlet.2013.06.039 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Bornand, Veronique;Mezy, Aude;
10:407:7 Room temperature ferromagnetism and ferroelectricity behavior of (Cu, Li) co-doped ZnO films deposited by reactive magnetron sputtering
DOI:10.1016/j.jcrysgro.2009.11.044 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:12 AU: Zou, C. W.;Wang, H. J.;Yin, M. L.;Li, M.;Liu, C. S.;Guo, L. P.;Fu, D. J.;Kang, T. W.;
10:407:8 Aqueous synthesis of single-crystalline ZnO prisms on graphite substrates
DOI:10.1016/j.jcrysgro.2010.10.161 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Hamada, Takahiro;Fujii, Eiji;Chu, Dewei;Kato, Kazumi;Masuda, Yoshitake;
10:407:9 Growth of nanostructured ZnO on wearable fabrics for functional garment
DOI:10.1016/j.matlet.2013.12.041 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Park, Hyejin;Tong, Fei;Sujan, Achintya;Chung, Yoonsung;Park, Minseo;Tatarchuk, Bruce J.;Koo, Helen;Ahn, Hosang;Yoon, Young Soo;Kim, Dong-Joo;
10:407:10 Structures and properties of the polyacrylonitrile fabric coated with ZnO-Ag composites
DOI:10.1016/j.apsusc.2010.08.056 JN:APPLIED SURFACE SCIENCE PY:2010
TC:1 AU: Shao, Dongfeng;Gao, Dawei;Wei, Qufu;Zhu, Hong;Tao, Lizhen;Ge, Mingqiao;
10:407:11 ZnO films grown on cotton fibers surface at low temperature by a simple two-step process
DOI:10.1016/j.matlet.2011.01.072 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Wang, Hongjun;Zakirov, Anvar;Yuldashev, Shavkat U.;Lee, Jaechun;Fu, Dejun;Kang, Taewon;
10:407:12 An alternative approach for the oriented growth of ZnO nanostructures
DOI:10.1016/j.matlet.2011.01.083 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Bornand, V.;Mezy, A.;
10:407:13 Effect of temperature on GaN films deposited on graphite substrates at low-temperature
DOI:10.1016/j.apsusc.2013.05.090 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Duan, Zhongwei;Qin, Fuwen;Lin, Guoqiang;Bian, Jiming;Zhang, Dong;Wang, Enping;
10:407:14 Magnetic and magneto-optical properties of Co/Nb-codoped TiO2 films deposited by gas flow sputtering
DOI:10.1016/j.jmmm.2009.11.003 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:2 AU: Sakuma, H.;Nagamatsu, T.;Kashiwakura, T.;Ishii, K.;
10:408:1 The growth of heavily Mg-doped GaN thin film on Si substrate by molecular beam epitaxy
DOI:10.1016/j.tsf.2011.06.070 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Chin, C. W.;Yam, F. K.;Beh, K. P.;Hassan, Z.;Ahmad, M. A.;Yusof, Y.;Bakhori, S. K. Mohd;
10:408:2 The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jallcom.2010.06.204 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Beh, K. P.;Yam, F. K.;Chin, C. W.;Tneh, S. S.;Hassan, Z.;
10:408:3 Infrared reflectance studies of hillock-like porous zinc oxide thin films
DOI:10.1016/j.tsf.2013.05.001 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Ching, C. G.;Lee, S. C.;Ng, S. S.;Hassan, Z.;Abu Hassan, H.;
10:408:4 Sensing devices based on ZnO hexagonal tube-like nanostructures grown on p-GaN heterojunction by wet thermal evaporation
DOI:10.1016/j.tsf.2013.05.091 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Abdulgafour, H. I.;Hassan, Z.;Yam, F. K.;Chin, C. W.;
10:408:5 Nanostructured GaN on silicon fabricated by electrochemical and laser-induced etching
DOI:10.1016/j.matlet.2010.09.054 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Ramizy, Asmiet;Hassan, Z.;Omar, Khalid;
10:408:6 Fabrication and characterization of metal-semiconductor-metal photodetector based on porous InGaN
DOI:10.1016/j.matchemphys.2013.12.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Abud, Saleh H.;Hassan, Z.;Yam, F. K.;
10:408:7 Surface phonon polariton characteristic of honeycomb nanoporous GaN thin films
DOI:10.1063/1.4794906 JN:APPLIED PHYSICS LETTERS PY:2013
TC:6 AU: Cheah, S. F.;Lee, S. C.;Ng, S. S.;Yam, F. K.;Abu Hassan, H.;Hassan, Z.;
10:408:8 Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy
DOI:10.1016/j.matchemphys.2014.03.008 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Lee, S. C.;Ng, S. S.;Abu Hassan, H.;Hassan, Z.;Zainal, N.;Novikov, S. V.;Foxon, C. T.;Kent, A. J.;
10:408:9 In-situ investigation of spontaneous and plasma-enhanced oxidation of AIN film surfaces
DOI:10.1063/1.3640219 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Song, Shigeng;Placido, Frank;
10:408:10 Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.apsusc.2010.11.189 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Hussein, A. S. H.;Hassan, Z.;Thahab, S. M.;Ng, S. S.;Abu Hassan, H.;Chin, C. W.;
10:408:11 Synthesis of hexagonal and cubic GaN thin film on Si (111) using a low-cost electrochemical deposition technique
DOI:10.1016/j.matlet.2010.04.043 JN:MATERIALS LETTERS PY:2010
TC:13 AU: Al-Heuseen, K.;Hashim, M. R.;Ali, N. K.;
10:408:12 Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching
DOI:10.1016/j.matlet.2013.06.056 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Abud, Saleh H.;Hassan, Z.;Yam, F. K.;
10:408:13 Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy
DOI:10.1016/j.tsf.2011.01.229 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Ooi, P. K.;Lee, S. C.;Ng, S. S.;Hassan, Z.;Abu Hassan, H.;Chen, W. L.;
10:408:14 Structural characterizations of GaN nanowires grown on Si (111) substrates by thermal evaporation
DOI:10.1016/j.matlet.2013.09.117 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Shekari, L.;Abu Hassan, H.;Hassan, Z.;
10:408:15 Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes
DOI:10.1016/j.tsf.2009.11.073 JN:THIN SOLID FILMS PY:2010
TC:12 AU: Senawiratne, J.;Chatterjee, A.;Detchprohm, T.;Zhao, W.;Li, Y.;Zhu, M.;Xia, Y.;Li, X.;Plawsky, J.;Wetzel, C.;
10:408:16 Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
DOI:10.1016/j.tsf.2011.08.017 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Zhang, Guiju;Cao, Bing;Wang, Chinhua;Han, Qin;Peng, Changsi;Wang, Jianfeng;Xu, Ke;Yang, Hui;Pessa, Markus;
10:409:1 Stability, transparency, and conductivity of MgxZn1-xO and CdxZn1-xO: Designing optimum transparency conductive oxides
DOI:10.1063/1.4861637 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Yin, Wan-Jian;Dai, Lingling;Zhang, Lin;Yang, Rong;Li, Liwei;Guo, Ted;Yan, Yanfa;
10:409:2 The origin of electrical property deterioration with increasing Mg concentration in ZnMgO:Ga
DOI:10.1016/j.tsf.2011.12.020 JN:THIN SOLID FILMS PY:2012
TC:15 AU: Ke, Yi;Berry, Joseph;Parilla, Philip;Zakutayev, Andriy;O'Hayre, Ryan;Ginley, David;
10:409:3 Strain effects and band parameters in MgO, ZnO, and CdO
DOI:10.1063/1.4759107 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Yan, Qimin;Rinke, Patrick;Winkelnkemper, Momme;Qteish, Abdallah;Bimberg, Dieter;Scheffler, Matthias;Van de Walle, Chris G.;
10:409:4 Optical and electrical properties of gallium-doped MgxZn1-xO
DOI:10.1063/1.3271415 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Wei, Wei;Jin, Chunming;Narayan, Jagdish;Narayan, Roger J.;
10:409:5 Effect of annealing ambient on electrical and optical properties of Ga-doped MgxZn1-xO films
DOI:10.1016/j.apsusc.2012.03.026 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Liu, Jinming;Zhao, Xiaoru;Duan, Libing;Sun, Huinan;Bai, Xiaojun;Chen, Liu;Chen, Changle;
10:409:6 Segregation of Mg in Zn1-xMgxO single crystals grown from the melt
DOI:10.1016/j.jcrysgro.2011.08.036 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Schulz, Detlev;Bertram, Rainer;Klimm, Detlef;Schulz, Tobias;Thiede, Elvira;
10:410:1 Evidences of V-O, V-Zn, and O-i defects as the green luminescence origins in ZnO
DOI:10.1063/1.4844735 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Lv, Jinpeng;Li, Chundong;
10:410:2 The effect of process parameters on the size of ZnO nanoparticles synthesized via the sol-gel technique
DOI:10.1016/j.jallcom.2012.09.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:20 AU: Ba-Abbad, Muneer M.;Kadhum, Abdul Amir H.;Mohamad, Abu Bakar;Takriff, Mohd S.;Sopian, Kamaruzzaman;
10:410:3 Raman spectra and photoluminescence properties of In-doped ZnO nanostructures
DOI:10.1016/j.matlet.2009.11.074 JN:MATERIALS LETTERS PY:2010
TC:25 AU: Zhao, Jing;Yan, Xiaoqin;Yang, Ya;Huang, Yunhua;Zhang, Yue;
10:410:4 Synthesis of ZnO/Zn2SiO4/SiO2 composite pigments with enhanced reflectance and radiation-stability under low-energy proton irradiation
DOI:10.1016/j.matlet.2010.06.027 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Li, Chundong;Liang, Zhiqiang;Xiao, Haiying;Wu, Yiyong;Liu, Yong;
10:410:5 Controlled mechanochemically assisted synthesis of ZnO nanopowders in the presence of oxalic acid
DOI:10.1007/s10853-011-5273-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:8 AU: Stankovic, A.;Veselinovic, Lj.;Skapin, S. D.;Markovic, S.;Uskokovic, D.;
10:410:6 Study on the optical absorption and green emission of ZnO phosphors by varying Al doping contents
DOI:10.1016/j.optmat.2012.10.037 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Li, Chundong;Lv, Jinpeng;Liang, Zhiqiang;Yao, Shulong;
10:410:7 Bandedge Emission in Sprayed ZnO Thin Films
DOI:10.1007/s13391-014-3361-x JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:1 AU: Thakur, Vikas;Verma, Udai Pratap;Poolla, Rajaram;
10:411:1 Effect of rapid thermal annealing on texture and properties of pulsed laser deposited zinc oxide thin films
DOI:10.1016/j.matlet.2013.02.032 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Sekhar, K. C.;Levichev, S.;Kamakshi, Koppole;Doyle, S.;Chahboun, A.;Gomes, M. J. M.;
10:411:2 Structural enhancement of ZnO on SiO2 for photonic applications
DOI:10.1063/1.4815974 JN:AIP ADVANCES PY:2013
TC:2 AU: Ruth, Marcel;Meier, Cedrik;
10:411:3 Effect of oxygen partial pressure on the Fermi level of ZnO1-x films fabricated by pulsed laser deposition
DOI:10.1063/1.3432398 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Min, Chul-Hee;Cho, Suyeon;Lee, Seung-Hyuk;Cho, Deok-Yong;Park, Won Goo;Chung, Jae Gwan;Lee, Eunha;Lee, Jae Cheol;Anass, Benayad;Lee, Jae Hak;Hwang, Cheol Seong;Oh, Se-Jung;
10:411:4 Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3 matrix
DOI:10.1007/s00339-013-7809-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Sekhar, K. C.;Levichev, S.;Buljan, M.;Bernstorff, S.;Kamakshi, Koppole;Chahboun, A.;Almeida, A.;Agostinho Moreira, J.;Pereira, M.;Gomes, M. J. M.;
10:411:5 Carrier localization in ZnO quantum wires
DOI:10.1063/1.4731767 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Kroeger, Philipp;Ruth, Marcel;Weber, Nils;Meier, Cedrik;
10:411:6 Oxygen partial pressure effect on structural and electrical behavior of pulsed laser deposited Zn0.98Co0.02O thin films
DOI:10.1016/j.matchemphys.2012.04.047 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Sekhar, K. C.;Khodorov, A.;Chahboun, A.;Levichev, S.;Almeida, A.;Moreira, J. Agostinho;Kamakshi, Koppole;Silva, C. J. R.;Pereira, M.;Gomes, M. J. M.;
10:411:7 Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films
DOI:10.1016/j.tsf.2012.12.035 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Yao, Jianke;Gong, Li;Xie, Lei;Zhang, Shengdong;
10:411:8 Mn-doped ZnO nanocrystals embedded in Al2O3: structural and electrical properties
DOI:10.1088/0957-4484/21/50/505705 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Khodorov, A.;Levichev, S.;Rolo, A. G.;Karzazi, O.;Chahboun, A.;Novak, J.;Vorobiev, A.;Tavares, C. J.;Eyidi, D.;Riviere, J-P;Beaufort, M. F.;Barradas, N. P.;Alves, E.;Barber, D. J.;Lanceros-Mendez, S.;Gomes, M. J. M.;
10:411:9 Scaling coefficient for three-dimensional grain coalescence of ZnO on Si(111)
DOI:10.1103/PhysRevB.86.224108 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;
10:411:10 Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures
DOI:10.1063/1.3665204 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Redondo-Cubero, A.;Vinnichenko, M.;Krause, M.;Muecklich, A.;Munoz, E.;Kolitsch, A.;Gago, R.;
10:411:11 Grain Boundary Carrier Scattering in ZnO Thin Films: a Study by Temperature-Dependent Charge Carrier Transport Measurements
DOI:10.1007/s11664-012-1907-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:2 AU: Naidu, R. V. Muniswami;Subrahmanyam, Aryasomayajula;Verger, Arnaud;Jain, M. K.;Rao, S. V. N. Bhaskara;Jha, S. N.;Phase, D. M.;
10:412:1 The Effect of Plasmonic Nanoparticles on the Optoelectronic Characteristics of CdTe Nanowires
DOI:10.1002/smll.201303388 JN:SMALL PY:2014
TC:7 AU: Luo, Lin-Bao;Huang, Xiao-Li;Wang, Ming-Zheng;Xie, Chao;Wu, Chun-Yan;Hu, Ji-Gang;Wang, Li;Huang, Jian-An;
10:412:2 High-quality CdTe nanowires: Synthesis, characterization, and application in photoresponse devices
DOI:10.1063/1.3474991 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:27 AU: Ye, Y.;Dai, L.;Sun, T.;You, L. P.;Zhu, R.;Gao, J. Y.;Peng, R. M.;Yu, D. P.;Qin, G. G.;
10:412:3 CdTe microwire-based ultraviolet photodetectors aligned by a non-uniform electric field
DOI:10.1063/1.4816780 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Park, Hyunik;Yang, Gwangseok;Chun, Seungju;Kim, Donghwan;Kim, Jihyun;
10:412:4 Nanowire transformation and annealing by Joule heating
DOI:10.1088/0957-4484/21/16/165704 JN:NANOTECHNOLOGY PY:2010
TC:15 AU: Hummelgard, Magnus;Zhang, Renyun;Carlberg, Torbjorn;Vengust, Damjan;Dvorsek, Damjan;Mihailovic, Dragan;Olin, Hakan;
10:412:5 Nature of AX Centers in Antimony-Doped Cadmium Telluride Nanobelts
DOI:10.1021/nl503781u JN:NANO LETTERS PY:2015
TC:1 AU: Huang, Liubing;Lin, Chien-Chih;Riediger, Max;Roeder, Robert;Tse, Pok Lam;Ronning, Carsten;Lu, Jia Grace;
10:412:6 In situ observation of morphological change in CdTe nano- and submicron wires
DOI:10.1088/0957-4484/22/43/435204 JN:NANOTECHNOLOGY PY:2011
TC:5 AU: Davami, Keivan;Ghassemi, Hessam M.;Sun, Xuhui;Yassar, Reza S.;Lee, Jeong-Soo;Meyyappan, M.;
10:412:7 Optical modulation of persistent photoconductivity in ZnO nanowires
DOI:10.1063/1.3590926 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Wang, Yao;Liao, Zhaoliang;She, Guangwei;Mu, Lixuan;Chen, Dongmin;Shi, Wensheng;
10:413:1 Gas sensing applications of 1D-nanostructured zinc oxide: Insights from density functional theory calculations
DOI:10.1016/j.pmatsci.2011.06.001 JN:PROGRESS IN MATERIALS SCIENCE PY:2012
TC:48 AU: Spencer, Michelle J. S.;
10:413:2 Template-free electrochemical synthesis of tin nanostructures
DOI:10.1007/s10853-013-7917-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:6 AU: Mackay, David T.;Janish, Matthew T.;Sahaym, Uttara;Kotula, Paul G.;Jungjohann, Katherine L.;Carter, C. Barry;Norton, M. Grant;
10:413:3 Polymeric Micelle Assembly for the Direct Synthesis of Platinum-Decorated Mesoporous TiO2 toward Highly Selective Sensing of Acetaldehyde
DOI:10.1021/am4039954 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:15 AU: Bastakoti, Bishnu Prasad;Torad, Nagy L.;Yamauchi, Yusuke;
10:413:4 Crystal growth behaviour in Au-ZnO nanocomposite under different annealing environments and photoswitchability
DOI:10.1063/1.4752469 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:30 AU: Mishra, Y. K.;Chakravadhanula, V. S. K.;Hrkac, V.;Jebril, S.;Agarwal, D. C.;Mohapatra, S.;Avasthi, D. K.;Kienle, L.;Adelung, R.;
10:413:5 Molecular Simulation for Gas Adsorption at NiO (100) Surface
DOI:10.1021/am3016894 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:1 AU: Wang, Baochang;Nisar, Jawad;Ahuja, Rajeev;
10:413:6 Novel, Nanoporous Silica and Titania Layers Fabricated by Magnetron Sputtering
DOI:10.1021/am100904w JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:7 AU: McCann, Michael T. P.;Mooney, Damian A.;Rahman, Mahfujur;Dowling, Denis P.;MacElroy, J. M. Don;
10:413:7 Electronic structure and magnetic properties of Mn-doped ZnO nanotubes: An ab initio study
DOI:10.1063/1.3493207 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: He, A. L.;Wang, X. Q.;Fan, Y. Q.;Feng, Y. P.;
10:413:8 Water Interaction with native defects on rutile TiO2 nanowire: Ab initio calculations
DOI:10.1063/1.3556276 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Nisar, J.;Araujo, C. Moyses;Ahuja, R.;
10:413:9 Self-Catalytic Growth of Tin Oxide Nanowires by Chemical Vapor Deposition Process
DOI:10.1155/2013/712361 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:2 AU: Thabethe, Bongani S.;Malgas, Gerald F.;Motaung, David E.;Malwela, Thomas;Arendse, Christopher J.;
10:414:1 Intrinsic nature of visible-light absorption in amorphous semiconducting oxides
DOI:10.1063/1.4868175 JN:APL MATERIALS PY:2014
TC:6 AU: Kang, Youngho;Song, Hochul;Nahm, Ho-Hyun;Jeon, Sang Ho;Cho, Youngmi;Han, Seungwu;
10:414:2 Microscopic Origin of Universal Quasilinear Band Structures of Transparent Conducting Oxides
DOI:10.1103/PhysRevLett.108.196404 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:14 AU: Kang, Youngho;Jeon, Sang Ho;Son, Young-Woo;Lee, Young-Su;Ryu, Myungkwan;Lee, Sangyoon;Han, Seungwu;
10:414:3 An efficient method to generate amorphous structures based on local geometry
DOI:10.1016/j.commatsci.2014.07.053 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:0 AU: Youn, Yong;Kang, Youngho;Han, Seungwu;
10:414:4 Cation disorder as the major electron scattering source in crystalline InGaZnO
DOI:10.1063/1.4802093 JN:APPLIED PHYSICS LETTERS PY:2013
TC:8 AU: Kang, Youngho;Cho, Youngmi;Han, Seungwu;
10:414:5 Bottom-gate amorphous In2O3 thin film transistors fabricated by magnetron sputtering
DOI:10.1007/s13391-012-2198-4 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:7 AU: Jiao, Yang;Zhang, Xinan;Zhai, Junxia;Yu, Xiankun;Ding, Linghong;Zhang, Weifeng;
10:414:6 Structural properties of amorphous selenium: An ab initio molecular-dynamics simulation
DOI:10.1016/j.commatsci.2009.11.026 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:3 AU: Reyes-Retana, J. A.;Valladares, Ariel A.;
10:415:1 Solution precursor plasma-sprayed tungsten oxide coatings for nitrogen dioxide detection
DOI:10.1016/j.ceramint.2014.03.109 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Zhang, Chao;Geng, Xin;Olivier, Marjorie;Liao, Hanlin;Debliquy, Marc;
10:415:2 Zinc oxide micro- and nanoparticles: Synthesis, structure and optical properties
DOI:10.1016/j.materresbull.2009.09.021 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:12 AU: Kumari, Latha;Li, W. Z.;Vannoy, Charles H.;Leblanc, Roger M.;Wang, D. Z.;
10:415:3 Fabrication of hierarchical ZnO architectures by a biomineralization process
DOI:10.1016/j.apt.2011.01.009 JN:ADVANCED POWDER TECHNOLOGY PY:2012
TC:6 AU: Ma, Peiyan;Wu, Yan;Fu, Zhengyi;Wang, Weimin;
10:415:4 Synthesis of WO3 thin films by surfactant mediated spray pyrolysis
DOI:10.1016/j.ceramint.2011.11.060 JN:CERAMICS INTERNATIONAL PY:2012
TC:12 AU: Bertus, L. M.;Duta, A.;
10:415:5 One-step synthesis of nanocrystalline ZnO via cryomilling
DOI:10.1016/j.powtec.2012.10.049 JN:POWDER TECHNOLOGY PY:2013
TC:0 AU: Fabian, M.;Tyuliev, G.;Feldhoff, A.;Kostova, N.;Kollar, P.;Suzuki, S.;Saito, F.;Sepelak, V.;
10:415:6 Synthesis of nitrogen-doped ZnO nanocrystallites with one-dimensional structure and their catalytic activity for ammonium perchlorate decomposition
DOI:10.1007/s11051-009-9787-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:12 AU: Zheng, Min;Wang, Zuo-shan;Wu, Jia-qing;Wang, Qing;
10:415:7 Structural and optical characterization of hemimorphite with flower-like morphology synthesized by a novel low-temperature method
DOI:10.1016/j.matlet.2012.06.111 JN:MATERIALS LETTERS PY:2012
TC:0 AU: Validzic, Ivana Lj.;Mitric, Miodrag;Jokic, Bojan M.;Comor, Mirjana I.;
10:415:8 Microstructure and field emission characteristics of ZnO nanoneedles grown by physical vapor deposition
DOI:10.1016/j.matchemphys.2010.05.029 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:13 AU: George, A.;Kumari, P.;Soin, N.;Roy, S. S.;McLaughlin, J. A.;
10:415:9 Effect of annealing temperature on PL spectrum and surface morphology of zinc oxide thin films
DOI:10.1016/j.apsusc.2012.12.154 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Zendehnam, A.;Mirzaee, M.;Miri, S.;
10:415:10 Solution precursor plasma deposition of nanostructured ZnO coatings
DOI:10.1016/j.materresbull.2011.03.028 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:2 AU: Tummala, Raghavender;Guduru, Ramesh K.;Mohanty, Pravansu S.;
10:415:11 Hydrothermal synthesis and optical properties of zinc silicate hierarchical superstructures
DOI:10.1016/j.matlet.2011.06.068 JN:MATERIALS LETTERS PY:2011
TC:3 AU: Yang, Jianmao;Sun, Yangang;Chen, Zhigang;Zhao, Xiaopeng;
10:415:12 Magnesium nanopowder for hydrogen absorption and ammonium perchlorate decomposition
DOI:10.1016/j.matlet.2012.07.008 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Fahimpour, V.;Sadrnezhaad, S. K.;
10:415:13 Formation and characterization of flame synthesized hexagonal zinc oxide nanorods for gas sensor applications
DOI:10.1016/j.ceramint.2012.12.037 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Kathirvel, P.;Chandrasekaran, J.;Manoharan, D.;Kumar, S.;
10:415:14 Interactions of different counterions with cationic and anionic surfactants
DOI:10.1016/j.jcis.2010.03.043 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:18 AU: Jakubowska, Anna;
10:416:1 Mechanical milled doped Zn-based semiconductors powders for photovoltaic devices
DOI:10.1016/j.ijhydene.2013.12.051 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:0 AU: Laborde, J. I.;Hoya, J.;Reyes Tolosa, M. D.;Hernandez-Fenollosa, M. A.;Damonte, L. C.;
10:416:2 Dye-sensitized solar cell based on nanocrystalline ZnO thin film electrodes combined with a novel light absorbing dye Coomassie Brilliant Blue in acetonitrile solution
DOI:10.1016/j.ijhydene.2011.12.064 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:8 AU: Srivastava, Pankaj;Bahadur, Lal;
10:416:3 ZnO-based nanocrystalline powders with applications in hybrid photovoltaic cells
DOI:10.1016/j.ijhydene.2009.12.131 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2010
TC:8 AU: Damonte, L. C.;Donderis, V.;Ferrari, S.;Meyer, M.;Orozco, J.;Hernandez-Fenollosa, M. A.;
10:416:4 Microstructure and magnetism of hydrothermal synthesized Mn-doped ZnTe nanoparticles
DOI:10.1016/j.jallcom.2014.08.012 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Tang, F. L.;Su, H. L.;Huang, S. Y.;Wu, Y. C.;Huang, J. C. A.;Du, Y. W.;Huang, X. L.;Jin, Y.;
10:416:5 Characterization of some metal-free organic dyes as photosensitizer for nanocrystalline ZnO-based dye sensitized solar cells
DOI:10.1016/j.ijhydene.2011.06.018 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2011
TC:9 AU: Kushwaha, Suman;Bahadur, Lal;
10:416:6 Structural characterization of mechanical milled ZnSe and ZnTe powders for photovoltaic devices
DOI:10.1016/j.ijhydene.2011.12.082 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:2 AU: Hoya, J.;Laborde, J. I.;Damonte, L. C.;
10:416:7 Growth of ZnTe films by pulsed laser deposition technique
DOI:10.1016/j.jallcom.2012.06.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Ghosh, B.;Ghosh, D.;Hussain, S.;Bhar, R.;Pal, A. K.;
10:416:8 Intense near-infrared emission from undoped ZnTe nanostructures synthesized by thermal evaporation
DOI:10.1016/j.jallcom.2013.06.107 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Ko, Hyunsung;Park, Sunghoon;An, Soyeon;Lee, Chongmu;
10:416:9 Preparation and characterization of ZnTe as an interlayer for CdS/CdTe substrate thin film solar cells on flexible substrates
DOI:10.1016/j.tsf.2012.11.103 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Feng, Xianjin;Singh, Kartikay;Bhavanam, Sushma;Palekis, Vasilios;Morel, Don L.;Ferekides, Chris;
10:416:10 Optical properties of CdTe/ZnTe self-assembled quantum dots: Raman and photoluminescence spectroscopy
DOI:10.1016/j.jallcom.2013.06.081 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Gilic, M.;Romcevic, N.;Romcevic, M.;Stojanovic, D.;Kostic, R.;Trajic, J.;Dobrowolski, W. D.;Karczewski, G.;Galazka, R.;
10:416:11 Magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe from first-principles calculations
DOI:10.1016/j.jmmm.2010.08.044 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:5 AU: Guo, Mei;Gao, Guoying;Hu, Yunxiang;
10:417:1 Water-soluble ZnS:Mn/ZnS core/shell nanoparticles prepared by a novel two-step method
DOI:10.1016/j.jallcom.2009.11.096 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:22 AU: Dong, Bohua;Cao, Lixin;Su, Ge;Liu, Wei;Qu, Hua;Zhai, Hui;
10:417:2 ZnS nanoparticles for high-sensitive fluorescent detection of pyridine compounds
DOI:10.1016/j.jallcom.2013.01.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Li, Zhe;Ma, Jiantao;Zong, Yanqing;Men, Yi;
10:417:3 Observations of unusual temperature dependent photoluminescence anti-quenching in two-dimensional nanosheets of ZnS/ZnO composites and polarization dependent photoluminescence enhancement in fungi-like ZnO nanostructures
DOI:10.1063/1.4883244 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Kole, A. K.;Kumbhakar, P.;Ganguly, T.;
10:417:4 Defect states of ZnO nanoparticles: Discrimination by time-resolved photoluminescence spectroscopy
DOI:10.1063/1.3382915 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:24 AU: Han, Noh Soo;Shim, Hyeong Seop;Seo, Joo Hee;Kim, Sun Young;Park, Seung Min;Song, Jae Kyu;
10:417:5 Synthesis and characterization of Mn doped ZnS d-dots with controllable dual-color emissions
DOI:10.1016/j.jcis.2011.10.010 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:14 AU: Dong, Bohua;Cao, Lixin;Su, Ge;Liu, Wei;
10:417:6 White light emission from Mn2+ doped ZnS nanocrystals through the surface chelating of 8-hydroxyquinoline-5-sulfonic acid
DOI:10.1088/0957-4484/21/11/115702 JN:NANOTECHNOLOGY PY:2010
TC:26 AU: Lue, Xiaodan;Yang, Jing;Fu, Yuqin;Liu, Qianqian;Qi, Bin;Lue, Changli;Su, Zhongmin;
10:417:7 Room temperature synthesis of Mn2+ doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination
DOI:10.1063/1.4795779 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Kole, A. K.;Tiwary, C. S.;Kumbhakar, P.;
10:417:8 Fabrication and photoluminescence of ZnS:Mn(2+) nanowires/ZnO quantum dots/SiO(2) heterostructure
DOI:10.1063/1.3467762 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Yang, Jinghai;Cao, Jian;Yang, Lili;Zhang, Yongjun;Wang, Yaxin;Liu, Xiaoyan;Wang, Dandan;Wei, Maobin;Gao, Ming;Lang, Jihui;
10:417:9 Mechanism of millisecond lifetime luminescence of Li nanoclusters dispersed in ZnO:Li nanocrystals
DOI:10.1016/j.optmat.2012.10.015 JN:OPTICAL MATERIALS PY:2013
TC:0 AU: Velazquez, J. J.;Shestakov, M. V.;Tikhomirov, V. K.;Cuong, N. T.;Lahoz, F.;Chibotaru, L. F.;Nguyen, M. T.;Rodriguez, V. D.;Moshchalkov, V. V.;
10:417:10 Experimental verification of nanoparticle jet minimum quantity lubrication effectiveness in grinding
DOI:10.1007/s11051-014-2758-7 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Jia, Dongzhou;Li, Changhe;Zhang, Dongkun;Zhang, Yanbin;Zhang, Xiaowei;
10:418:1 Review Paper: Semiconductor Nanoparticles with Surface Passivation and Surface Plasmon
DOI:10.1007/s13391-011-0902-4 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:16 AU: Jung, Dae-Ryong;Kim, Jongmin;Nahm, Changwoo;Choi, Hongsik;Nam, Seunghoon;Park, Byungwoo;
10:418:2 Surface-passivation effects on the photoluminescence enhancement in ZnS:Mn nanoparticles by ultraviolet irradiation with oxygen bubbling
DOI:10.1063/1.3431267 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Jung, Dae-Ryong;Kim, Jongmin;Park, Byungwoo;
10:418:3 Effect of Ordered Intermediate Porosity on Ion Transport in Hierarchically Nanoporous Electrodes
DOI:10.1021/am300798j JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:17 AU: Chae, Weon-Sik;Van Gough, Dara;Ham, Sung-Kyoung;Robinson, David B.;Braun, Paul V.;
10:418:4 Realization of enhanced room temperature ferromagnetism in pure and V-doped ZnO films on TOP functionalization
DOI:10.1557/jmr.2013.359 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:0 AU: Jayalakshmi, G.;Balasubramanian, T.;
10:418:5 Self-catalytic synthesis, structure and properties of ultra-fine luminescent ZnO nanostructures for field emission applications
DOI:10.1088/0957-4484/21/22/225709 JN:NANOTECHNOLOGY PY:2010
TC:14 AU: Gupta, Bipin Kumar;Haranath, D.;Chawla, S.;Chander, H.;Singh, V. N.;Shanker, V.;
10:418:6 Enhancement of the ultraviolet emission of ZnO nanorods by terphenyl liquid-crystalline ligands modification
DOI:10.1016/j.apsusc.2011.04.022 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Chen, Wei;Li, Fan;Chen, Yiwang;Yuan, Kai;Chen, Lie;
10:418:7 Application of Flower-Like ZnO Nanorods Gas Sensor Detecting SF6 Decomposition Products
DOI:10.1155/2013/135147 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Peng, Shudi;Wu, Gaolin;Song, Wei;Wang, Qian;
10:418:8 Sulfur dioxide and nitrogen dioxide adsorption on zinc oxide and zirconium hydroxide nanoparticles and the effect on photoluminescence
DOI:10.1016/j.apsusc.2012.02.093 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Singh, Jagdeep;Mukherjee, Anupama;Sengupta, Sandip K.;Im, Jisun;Peterson, Gregory W.;Whitten, James E.;
10:418:9 Bimodal porous gold opals for molecular sensing
DOI:10.1007/s13391-013-6011-9 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Chae, Weon-Sik;Yu, Hyunung;Ham, Sung-Kyoung;Lee, Myung-Jin;Jung, Jin-Seung;Robinson, David B.;
10:418:10 Effect of Electrolyte and Adsorbates on Charging Rates in Mesoporous Gold Electrodes
DOI:10.1021/la903816f JN:LANGMUIR PY:2010
TC:9 AU: Robinson, David B.;Wu, Chung-An Max;Ong, Markus D.;Jacobs, Benjamin W.;Pierson, Bonnie E.;
10:418:11 Adaptive background model for non-static background subtraction by estimation of the color change ratio
DOI:10.1007/s13391-013-3172-5 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Lee, Jeisung;Cheon, Minkyu;Hyun, Chang-Ho;Eum, Hyukmin;Park, Mignon;
10:419:1 Compression behavior and phase transition of cubic In2O3 nanocrystals
DOI:10.1063/1.3561363 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:13 AU: Qi, J.;Liu, J. F.;He, Y.;Chen, W.;Wang, C.;
10:419:2 High-pressure lattice dynamical study of bulk and nanocrystalline In2O3
DOI:10.1063/1.4769747 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Garcia-Domene, B.;Ortiz, H. M.;Gomis, O.;Sans, J. A.;Manjon, F. J.;Munoz, A.;Rodriguez-Hernandez, P.;Achary, S. N.;Errandonea, D.;Martinez-Garcia, D.;Romero, A. H.;Singhal, A.;Tyagi, A. K.;
10:419:3 Spectroscopic ellipsometry of wurtzite ZnO and GaN: Examination of a special case
DOI:10.1063/1.3285485 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Shokhovets, S.;Spiess, L.;Gobsch, G.;
10:419:4 Dielectric function in the NIR-VUV spectral range of (InxGa1-x)(2)O-3 thin films
DOI:10.1063/1.4891521 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Schmidt-Grund, R.;Kranert, C.;Boentgen, T.;von Wenckstern, H.;Krauss, H.;Grundmann, M.;
10:419:5 Lattice parameters and Raman-active phonon modes of (InxGa1-x)(2)O-3 for x < 0.4
DOI:10.1063/1.4886895 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:6 AU: Kranert, Christian;Lenzner, Joerg;Jenderka, Marcus;Lorenz, Michael;von Wenckstern, Holger;Schmidt-Grund, Ruediger;Grundmann, Marius;
10:419:6 Synthesis and characterization of indium aluminate (InAlO3) nanoparticles by wet chemical method
DOI:10.1016/j.apt.2014.01.023 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:0 AU: Sathish, S.;Shekar, B. Chandar;Nataraj, D.;
10:419:7 Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire
DOI:10.1063/1.3658217 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Wang, Ch Y.;Kirste, L.;Morales, F. M.;Manuel, J. M.;Roehlig, C. C.;Koehler, K.;Cimalla, V.;Garcia, R.;Ambacher, O.;
10:419:8 Synthesis of indium oxide cubic crystals by modified hydrothermal route for application in room temperature flexible ethanol sensors
DOI:10.1016/j.matchemphys.2011.12.034 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:5 AU: Seetha, M.;Meena, P.;Mangalaraj, D.;Masuda, Yoshitake;Senthil, K.;
10:419:9 Factors to determine the pressure change tendencies in pressure-induced phase transition of semiconductor nanocrystals
DOI:10.1016/j.matchemphys.2014.04.013 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Jiang, Xiaobao;Zhao, Ming;Zheng, Wei Tao;Jiang, Qing;
10:419:10 Stoichiometry dependent electron transport and gas sensing properties of indium oxide nanowires
DOI:10.1088/0957-4484/24/22/225704 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Gali, Pradeep;Sapkota, Gopal;Syllaios, A. J.;Littler, Chris;Philipose, U.;
10:419:11 Structural characterization of sputtered indium oxide films deposited at room temperature
DOI:10.1016/j.tsf.2009.12.018 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Hotovy, I.;Pezoldt, J.;Kadlecikova, M.;Kups, T.;Spiess, L.;Breza, J.;Sakalauskas, E.;Goldhahn, R.;Rehacek, V.;
10:419:12 Study on growth of hollow nanoparticles of alumina
DOI:10.1007/s10853-010-5059-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:5 AU: Kulkarni, Naveen V.;Karmakar, Soumen;Asthana, Srinanadan N.;Nawale, Ashok B.;Sheikh, Arif;Patole, Shashikant P.;Yoo, J. B.;Mathe, Vikas L.;Das, Ashok K.;Bhoraskar, Sudha V.;
10:419:13 The role of stoichiometry of indium and oxygen on gas sensing properties of indium oxide nanostructures
DOI:10.1063/1.3371717 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Kumar, Mukesh;Mehta, B. R.;Singh, V. N.;Chatterjee, R.;Milikisiyants, S.;Lakshmi, K. V.;Singh, J. P.;
10:420:1 Field emission behavior of vertically aligned ZnO nanowire planar cathodes
DOI:10.1063/1.3549837 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Semet, V.;Vu Thien Binh;Pauporte, Th.;Joulaud, L.;Vermersch, F. J.;
10:420:2 Field emission in ordered arrays of ZnO nanowires prepared by nanosphere lithography and extended Fowler-Nordheim analyses
DOI:10.1063/1.3671402 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: McCarthy, E.;Garry, S.;Byrne, D.;McGlynn, E.;Mosnier, J. -P.;
10:420:3 Field emission from ZnO whiskers under intervalley electron redistribution
DOI:10.1016/j.apsusc.2012.01.153 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Yilmazoglu, O.;Biethan, J. -P.;Evtukh, A.;Semenenko, M.;Pavlidis, D.;Hartnagel, H. L.;Litovchenko, V.;
10:420:4 A novel, substrate independent three-step process for the growth of uniform ZnO nanorod arrays
DOI:10.1016/j.tsf.2009.12.014 JN:THIN SOLID FILMS PY:2010
TC:16 AU: Byrne, D.;McGlynn, E.;Henry, M. O.;Kumar, K.;Hughes, G.;
10:420:5 Field emission from zinc oxide nanorod bundles grown on silicon nanoporous pillar array
DOI:10.1016/j.apsusc.2012.12.136 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Wang, Ling Li;Gong, Shang Dong;Wu, Li Hong;Li, Xin Jian;
10:420:6 Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures
DOI:10.1063/1.3481061 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Zeng, J. Z.;Deng, S. Z.;She, J. C.;He, H.;Xua, N. S.;
10:420:7 Peculiarities of the photon-assisted field emissions from GaN nanorods
DOI:10.1116/1.3368463 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:4 AU: Evtukh, A.;Yilmazoglu, O.;Litovchenko, V.;Semenenko, M.;Kyriienko, O.;Hartnagel, H. L.;Pavlidis, D.;
10:420:8 Hybrid thermal-field emission of ZnO nanowires
DOI:10.1063/1.3670331 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Ulisse, Giacomo;Brunetti, Francesca;Vomiero, Alberto;Natile, Marta M.;Sberveglieri, Giorgio;Di Carlo, Aldo;
10:420:9 Multiphoton-absorption induced ultraviolet luminescence of ZnO nanorods using low-energy femtosecond pulses
DOI:10.1063/1.3468632 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:10 AU: Das, Susanta Kumar;Biswas, Mahua;Byrne, Daragh;Bock, Martin;McGlynn, Enda;Breusing, Markus;Grunwald, Ruediger;
10:420:10 Pulsed-laser treatment of solution-grown ZnO nanowires in nitrogen: Enhancing in electrical conduction and field emission
DOI:10.1063/1.3284948 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Chen, J. B.;Xu, C. J.;She, J. C.;Deng, S. Z.;Chen, Jun;Xu, N. S.;
10:420:11 Influence of ZnO nanowire array morphology on field emission characteristics
DOI:10.1088/0957-4484/25/13/135604 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Garry, S.;McCarthy, E.;Mosnier, J-P;McGlynn, E.;
10:420:12 Electrical field induced direct-to-indirect bandgap transition in ZnO nanowires
DOI:10.1063/1.3462407 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Li, S.;Li, J. L.;Jiang, Q.;Yang, G. W.;
10:420:13 GaN surface electron field emission efficiency enhancement by low-energy photon illumination
DOI:10.1116/1.3692253 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Evtukh, Anatoli;Yilmazoglu, Oktay;Litovchenko, Vladimir;Ievtukh, Valery;Hartnagel, Hans L.;Pavlidis, Dimitris;
10:421:1 Synthesis of ZnO and Zn Nanoparticles in Microwave Plasma and Their Deposition on Glass Slides
DOI:10.1021/la904499s JN:LANGMUIR PY:2010
TC:33 AU: Irzh, Alexander;Genish, Isaschar;Klein, Lior;Solovyov, Leonid A.;Gedanken, Aharon;
10:421:2 Preparation of zinc oxide coatings by using newly designed metal-organic complexes of Zn: Effect of molecular structure of the precursor and surfactant over the crystallization, growth and luminescence
DOI:10.1016/j.jallcom.2013.09.060 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Brahma, Sanjaya;Shivashankar, S. A.;
10:421:3 One-minute microwave-assisted chemical bath deposition of nanostructured ZnO rod-arrays
DOI:10.1016/j.matlet.2010.12.017 JN:MATERIALS LETTERS PY:2011
TC:9 AU: Kothari, Anjana;Chaudhuri, Tapas K.;
10:421:4 Low temperature and rapid deposition of ZnO nanorods on Si(100) substrate with tunable optical emissions
DOI:10.1016/j.matchemphys.2013.04.017 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:4 AU: Brahma, Sanjaya;Huang, J-L;Liu, C. P.;Kukreja, L. M.;Shivashankar, S. A.;
10:421:5 Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers
DOI:10.1155/2011/582764 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:6 AU: Shim, Jang Bo;Chang, Hyuk;Kim, Sung-O;
10:421:6 One-step deposition of ZnO morphologies from single aqueous chemical bath prepared from reverse osmosis processed water
DOI:10.1016/j.matlet.2014.09.017 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Kothari, Anjana;Chaudhuri, Tapas K.;
10:421:7 Microwave irradiation-assisted method for the deposition of adherent oxide films on semiconducting and dielectric substrates
DOI:10.1016/j.tsf.2010.05.078 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Brahma, Sanjaya;Shivashankar, S. A.;
10:421:8 Phase reduction of coated maghemite (gamma-Fe2O3) nanoparticles under microwave-induced plasma heating for rapid heat treatment
DOI:10.1039/c1jm12524a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:5 AU: Azadmanjiri, Jalal;Simon, George P.;Suzuki, Kiyonori;Selomulya, Cordelia;Cashion, John D.;
10:421:9 The use of plasma treatment for simultaneous carbonization and reduction of iron oxide/polypyrrole core/shell nanoparticles
DOI:10.1007/s11051-012-1078-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:2 AU: Azadmanjiri, Jalal;Suzuki, Kiyonori;Selomulya, Cordelia;Amiet, Andrew;Cashion, John D.;Simon, George P.;
10:422:1 Hydrothermal synthesis of Ti oxide nanostructures and TiO2:SnO2 heterostructures applied to the photodegradation of rhodamine B
DOI:10.1016/j.matchemphys.2012.05.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:13 AU: Mourao, Henrique A. J. L.;Avansi Junior, Waldir;Ribeiro, Caue;
10:422:2 Hydrothermal synthesis and photocatalytic properties of anatase TiO2 nanocrystals obtained from peroxytitanium complex precursor
DOI:10.1016/j.mssp.2014.01.028 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Mourao, Henrique A. J. L.;Lopes, Osmando Ferreira;Malagutti, Andrea Renata;Paris, Elaine Cristina;Ribeiro, Caue;
10:422:3 Nickel oxide nanoparticles: Synthesis and spectral studies of interactions with glucose
DOI:10.1016/j.mssp.2013.05.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: El-Kemary, M.;Nagy, N.;El-Mehasseb, I.;
10:422:4 Surface-enhanced Raman scattering of SnO2 bulk material and colloidal solutions
DOI:10.1103/PhysRevB.85.195423 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Fazio, Enza;Neri, Fortunato;Savasta, Salvatore;Spadaro, Salvatore;Trusso, Sebastiano;
10:422:5 Study of substrate temperature effects on structural, optical, mechanical and opto-thermal properties of NiO sprayed semiconductor thin films
DOI:10.1016/j.mseb.2014.06.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:4 AU: Boukhachem, A.;Boughalmi, R.;Karyaoui, M.;Mhamdi, A.;Chtourou, R.;Boubaker, K.;Amlouk, M.;
10:422:6 Effects of calcination temperatures and additives on the photodegradation of methylene blue by tin dioxide nanocrystals
DOI:10.1016/j.mssp.2014.07.048 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Wan, Xia;Ma, Rui;Tie, Shaolong;Lan, Shen;
10:422:7 Preparation of rod shaped nickel oxide thin films by a novel and cost effective nebulizer technique
DOI:10.1016/j.mssp.2014.09.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Gowthami, V.;Meenakshi, M.;Perumal, P.;Sivakuma, R.;Sanjeeviraja, C.;
10:422:8 The Effect of Thermal Gradients in SERS Spectroscopy
DOI:10.1002/smll.201000996 JN:SMALL PY:2010
TC:16 AU: Kang, Taewook;Hong, Soongweon;Choi, Yeonho;Lee, Luke P.;
10:422:9 Structural properties of pulsed laser deposited SnOx thin films
DOI:10.1016/j.apsusc.2010.10.015 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Fazio, E.;Neri, F.;Ruggeri, R.;Sabatino, G.;Trusso, S.;Mannino, G.;
10:422:10 Influence of the plasma expansion dynamics on the structural properties of pulsed laser ablation deposited tin oxide thin films
DOI:10.1016/j.tsf.2010.03.067 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Trusso, S.;Fazio, B.;Fazio, E.;Neri, F.;Barreca, F.;
10:422:11 Optical and electrical properties of nickel oxide thin films synthesized by sol-gel spin coating
DOI:10.1016/j.mssp.2014.01.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Jlassi, M.;Sta, I.;Hajji, M.;Ezzaouia, H.;
10:422:12 Solar-powered potentially induced TiO2, ZnO and SnO2-catalyzed iodine generation
DOI:10.1016/j.solmat.2010.01.015 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:10 AU: Karunakaran, C.;Anilkumar, P.;Manikandan, G.;Gomathisankar, P.;
10:423:1 Nanostructured TiO2 films: Enhanced NH3 detection at room temperature
DOI:10.1016/j.ceramint.2013.06.016 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Dhivya, P.;Prasad, Arun K.;Sridharan, M.;
10:423:2 Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with c-axis orientation and pyramidal surface texture
DOI:10.1016/j.apsusc.2013.09.099 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Mondal, Praloy;Das, Debajyoti;
10:423:3 Shuttle-like ZnO nano/microrods: Facile synthesis, optical characterization and high formaldehyde sensing properties
DOI:10.1016/j.apsusc.2011.07.116 JN:APPLIED SURFACE SCIENCE PY:2011
TC:32 AU: Zhang, Lexi;Zhao, Jianghong;Zheng, Jianfeng;Li, Li;Zhu, Zhenping;
10:423:4 Self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering
DOI:10.1016/j.matlet.2012.12.007 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Seo, S. H.;Kang, H. C.;
10:423:5 Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive films deposited by pulsed DC magnetron sputtering
DOI:10.1016/j.mssp.2013.02.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Kim, Doo-Soo;Park, Ji-Hyeon;Lee, Su-Jeong;Ahn, Kyung-Jun;Lee, Mi-So;Ham, Moon-Ho;Lee, Woong;Myoung, Jae-Min;
10:423:6 Oxygen effect in radio frequency magnetron sputtered aluminium doped zinc oxide films
DOI:10.1016/j.tsf.2014.03.073 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Rahmane, Saad;Djouadi, Mohamed Abdou;Aida, Mohamed Salah;Barreau, Nicolas;
10:423:7 Optical and room temperature sensing properties of highly oxygen deficient flower-like ZnO nanostructures
DOI:10.1016/j.apsusc.2010.08.093 JN:APPLIED SURFACE SCIENCE PY:2010
TC:24 AU: Singh, N. Kamal;Shrivastava, Sadhna;Rath, Shyama;Annapoorni, S.;
10:423:8 Electrochemical Growth of Hexagonal ZnO Pyramids and their Optical Property
DOI:10.1016/j.matlet.2012.05.133 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Samanta, Pijus Kanti;Basak, Shibabrata;
10:423:9 Influence of the method of synthesis on hydrogen adsorption properties of mesoporous binary B(2)O(3)/Al(2)O(3) gel systems
DOI:10.1016/j.ijhydene.2011.04.091 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2011
TC:2 AU: Martyla, Agnieszka;Olejnik, Barbara;Kirszensztejn, Piotr;Przekop, Robert;
10:423:10 Formation and characterization of a SnO2-Al2O3 system derived from a sol-gel process based on different tin precursors
DOI:10.1016/j.jnoncrysol.2011.01.027 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:2 AU: Kirszensztejn, Piotr;Jurek, Katarzyna;Tolinska, Agnieszka;Kawalko, Adriana;
10:423:11 Porous xerogel systems B2O3-Al2O3 obtained by the sol-gel method
DOI:10.1016/j.jnoncryso1.2014.05.027 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2014
TC:0 AU: Przekop, Robert;Kirszensztejn, Piotr;
10:423:12 Effects of sputtering power and pressure on properties of ZnO:Ga thin films prepared by oblique-angle deposition
DOI:10.1016/j.tsf.2011.06.073 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Flickyngerova, S.;Netrvalova, M.;Sutta, P.;Novotny, I.;Tvarozek, V.;Gaspierik, P.;Bruncko, J.;
10:423:13 Effect of sputtering pressure and post-annealing on hydrophilicity of TiO2 thin films deposited by reactive magnetron sputtering
DOI:10.1016/j.tsf.2010.04.106 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Liao, M. C.;Niu, H.;Chen, G. S.;
10:424:1 Effect of ZnO decoration on the photovoltaic performance of TiO2 based dye sensitized solar cells
DOI:10.1016/j.jallcom.2014.03.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Yang, Long;Zhai, Bao-gai;Ma, Qing-lan;Huang, Yuan Ming;
10:424:2 Preparation of ZnO-coated TiO2 electrodes using dip coating and their applications in dye-sensitized solar cells
DOI:10.1016/j.powtec.2011.09.003 JN:POWDER TECHNOLOGY PY:2012
TC:27 AU: Chou, Chuen-Shii;Chou, Feng-Cheng;Kang, Jhe-Yuan;
10:424:3 Enhanced photovoltaic performance of dye sensitized solar cells using one dimensional ZnO nanorod decorated porous TiO2 film electrode
DOI:10.1016/j.apsusc.2013.11.134 JN:APPLIED SURFACE SCIENCE PY:2014
TC:9 AU: Yang, Long;Ma, Qing-lan;Cai, Yungao;Huang, Yuan Ming;
10:424:4 Luminescent single-crystal ZnO nanorods: Controlled synthesis through altering the solvents composition
DOI:10.1016/j.matlet.2012.05.019 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Li, Chunyang;Du, Xiaodi;Lu, Wei;Liu, Kuili;Chang, Jiazhong;Chen, Songling;Yue, Dan;Wang, Zhenling;
10:424:5 A simple method to grow one-dimensional ZnO nanostructures in air
DOI:10.1016/j.matlet.2012.11.101 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Huang, Yuan Ming;Ma, Qing-lan;Zhai, Bao-gai;
10:424:6 Controlled morphology of ZnO nanostructures by adjusting the zinc foil heating temperature in an air-filled box furnace
DOI:10.1016/j.matchemphys.2014.06.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:5 AU: Huang, Yuan Ming;Ma, Qing-lan;Zhai, Bao-gai;
10:424:7 Structural, optical, and magnetic properties of polycrystalline Co-doped TiO2 synthesized by solid-state method
DOI:10.1016/j.mseb.2012.08.014 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:6 AU: Bouaine, Abdelhamid;Schmerber, G.;Ihiawakrim, D.;Derory, A.;
10:424:8 TiO2 rutile nanowire electrodes for dye-sensitized solar cells
DOI:10.1016/j.matlet.2011.09.105 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Oh, Jae-Kyung;Lee, Jin-Kyu;Han, Biao;Kim, Si-Jin;Park, Kyung-Won;
10:424:9 The effect of photoanode thickness on the performance of dye-sensitized solar cells containing TiO2 nanosheets with exposed reactive {001} facets
DOI:10.1557/jmr.2012.372 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:4 AU: Wu, Xia;Lu, Gaoqing;Wang, Lianzhou;
10:424:10 Growth and characterization of wurtzite ZnO nanocombs and nanosaws
DOI:10.1016/j.matlet.2011.11.042 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Mousavi, S. H.;Haratizadeh, H.;de Oliveira, P. W.;
10:425:1 Preparation and characterization of electrodeposited ZnO and ZnO:Co nanorod films for heterojunction diode applications
DOI:10.1016/j.jallcom.2013.04.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:12 AU: Caglar, Yasemin;Arslan, Andac;Ilican, Saliha;Hur, Evrim;Aksoy, Seval;Caglar, Mujdat;
10:425:2 The effect of surfactant on the structure and properties of ZnO films prepared by electrodeposition
DOI:10.1016/j.mseb.2012.08.012 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:7 AU: Qin, Xiujuan;Shao, Guangjie;Zhao, Lin;
10:425:3 Photocatalytic zinc oxide thin films obtained by surfactant assisted spray pyrolysis deposition
DOI:10.1016/j.apsusc.2014.02.132 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Duta, M.;Perniu, D.;Duta, A.;
10:425:4 Electrochemical deposition of ordered macroporous ZnO on transparent conducting electrodes
DOI:10.1016/j.matchemphys.2011.04.021 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:11 AU: McLachlan, M. A.;Rahman, H.;Illy, B.;McComb, D. W.;Ryan, M. P.;
10:425:5 Growth of porous ZnO nanosheets by electrodeposition with the addition of KBr in nitrate electrolyte
DOI:10.1016/j.matlet.2012.08.137 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Hou, Qin;Zhu, Liqun;Chen, Haining;Liu, Huicong;Li, Weiping;
10:425:6 Optical and structural properties of porous zinc oxide fabricated via electrochemical etching method
DOI:10.1016/j.mseb.2013.05.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:3 AU: Ching, C. G.;Lee, S. C.;Ooi, P. K.;Ng, S. S.;Hassan, Z.;Abu Hassan, H.;Abdullah, M. J.;
10:425:7 Crystal orientation dependence of polarized infrared reflectance response of hexagonal sapphire crystal
DOI:10.1016/j.optmat.2014.09.006 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Lee, S. C.;Ng, S. S.;Abu Hassan, H.;Hassan, Z.;Dumelow, T.;
10:425:8 Nucleation and growth mechanisms of ZnO heterostructures controlled by temperature and pressure of CVD
DOI:10.1016/j.mseb.2010.01.023 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:4 AU: d'Abbadie, L.;Tan, T. T.;Yang, C. C.;Li, S.;
10:425:9 Microstructure-property relationship in textured ZnO-based varistors
DOI:10.1016/j.actamat.2010.04.003 JN:ACTA MATERIALIA PY:2010
TC:5 AU: Ozer, I. Ozguer;Suvaci, Ender;Bernik, Slavko;
10:426:1 Conformal growth of ZnO on TiO2 nanowire array for enhanced photocatalytic activity
DOI:10.1016/j.apsusc.2013.04.092 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Tao, Ru-Hua;Wu, Jin-Ming;Xiao, Jing-Zhong;Zhao, Yi-Ping;Dong, Wei-Wei;Fang, Xiao-Dong;
10:426:2 Improved separation efficiency of photogenerated carriers for Fe2O3/SrTiO3 heterojunction semiconductor
DOI:10.1016/j.ijhydene.2013.05.064 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2013
TC:5 AU: Zhang, Zhenlong;Liu, Guangsheng;Mao, Yanli;
10:426:3 Growth specificity of vertical ZnO nanorods on patterned seeded substrates through integrated chemical process
DOI:10.1016/j.matchemphys.2011.12.076 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:3 AU: Kumar, P. Suresh;Maniam, S. M.;Sundaramurthy, J.;Arokiaraj, J.;Mangalaraj, D.;Rajarathnam, D.;Srinivasan, M. P.;Jian, L. K.;
10:426:4 Pure ZnO and composite ZnO/TiO2 catalyst plates: A comparative study for the degradation of azo dye, pesticide and antibiotic in aqueous solutions
DOI:10.1016/j.jcis.2014.05.022 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:7 AU: Topkaya, Eylem;Konyar, Mehmet;Yatmaz, H. Cengiz;Ozturk, Koray;
10:426:5 Sintering temperature effect on photocatalytic efficiencies of ZnO/TiO2 composite plates
DOI:10.1016/j.apsusc.2012.04.058 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Konyar, Mehmet;Yatmaz, H. Cengiz;Ozturk, Koray;
10:426:6 The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct
DOI:10.1088/0957-4484/21/4/045701 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Black, K.;Jones, A. C.;Alexandrou, I.;Heys, P. N.;Chalker, P. R.;
10:426:7 Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors
DOI:10.1007/s00339-010-5973-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:9 AU: Yoshida, T.;Tachibana, T.;Maemoto, T.;Sasa, S.;Inoue, M.;
10:426:8 Light-induced antifungal activity of TiO2 nanoparticles/ZnO nanowires
DOI:10.1016/j.apsusc.2011.06.145 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Haghighi, N.;Abdi, Y.;Haghighi, F.;
10:426:9 Enhanced Light Response of Titania Nanotube Arrays Sensitized with Pyrite FeS2
DOI:10.1111/j.1551-2916.2010.03649.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:12 AU: Song, Xiao-Mei;Wu, Jin-Ming;Meng, Liang;Yan, Mi;
10:427:1 Structural study and phase transition investigation in a simple synthesis of porous architected-ZnO nanopowder
DOI:10.1016/j.matchar.2013.10.004 JN:MATERIALS CHARACTERIZATION PY:2013
TC:3 AU: Shang, C.;Barnabe, A.;
10:427:2 Effects of alkali on the morphologies and photoluminescence properties of ZnO nanostructures
DOI:10.1016/j.matlet.2010.05.030 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Hu, Q. R.;Wang, S. L.;Tang, W. H.;
10:427:3 Porous ZnO nanobelts: synthesis, mechanism, and morphological evolutions
DOI:10.1007/s11051-009-9588-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:21 AU: Cao, Xia;Wang, Ning;Wang, Long;Guo, Lin;
10:427:4 Sonochemical synthesis and optical properties of amorphous ZnO nanowires
DOI:10.1007/s11051-011-0403-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:4 AU: Zhou, ShaoMin;Yuan, RuiJian;Lou, ShiYun;Wang, YongQiang;Yuan, HongLei;Zhu, GongYu;Liu, LiSheng;Hao, YaoMing;Li, Ning;
10:427:5 Hydrothermal growth of upright-standing ZnO sheet microcrystals
DOI:10.1016/j.mseb.2014.03.011 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Shi, Ruixia;Yang, Ping;Dong, Xiaobin;Jia, Changchao;Li, Jia;
10:427:6 Organic acid-based wet etching behaviors of Ga-doped ZnO films sputter-deposited at different substrate temperatures
DOI:10.1016/j.tsf.2010.01.063 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Lee, Dong-Kyoon;Bang, Jungsik;Park, Mungi;Lee, Jae-Ho;Yang, Heesun;
10:427:7 Conversion of ZnO microrods into microdisks like structures and its effect on photoluminescence properties
DOI:10.1016/j.ceramint.2013.03.098 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Rai, Prabhakar;Raj, Sudarsan;Lee, In-Hwan;Kwak, Woon-Ki;Yu, Yeon-Tae;
10:427:8 Large ZnO Mesocrystals of Hexagonal Columnar Morphology Derived from Liquid Crystal Templates
DOI:10.1111/j.1551-2916.2011.04498.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:6 AU: Li, Hui;Zhang, Yu;Liu, Hongfei;Wang, John;
10:427:9 A simple method for preparation of micro-sized ZnO flakes
DOI:10.1016/j.matlet.2012.10.013 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zareie, Mehdi;Gholami, Abed;Bahrami, Mohammad;Rezaei, Amir Hossein;Keshavarz, Mohammad Hossein;
10:427:10 Effect of ultrasonic treatment before and after hydrothermal process on the morphologies and formation mechanism of ZnO nanorods
DOI:10.1007/s00339-013-7604-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Zhang, J. J.;Guo, E. J.;Yue, H. Y.;Wang, L. P.;Zhang, C. Y.;
10:427:11 Synthesis of zinc oxide porous structures by anodization with water as an electrolyte
DOI:10.1007/s00339-012-7023-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Shetty, Amitha;Nanda, Karuna Kar;
10:427:12 Preparation of multi-interfacial ZnO particles and their growth mechanism
DOI:10.1016/j.apt.2010.09.017 JN:ADVANCED POWDER TECHNOLOGY PY:2011
TC:6 AU: Xu, Xiaoling;Pang, Hemiao;Zhou, Zuowan;Fan, Ximei;Hu, Shuchun;Wang, Yong;
10:427:13 Sonochemical synthesis of nanostructured VOPO4 center dot 2H(2)O/carbon nanotube composites with improved lithium ion battery performance
DOI:10.1007/s11051-009-9626-x JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:4 AU: Sun, Yongfu;Wu, Changzheng;Xie, Yi;
10:428:1 Understanding phase separation in ZnCdO by a combination of structural and optical analysis
DOI:10.1103/PhysRevB.83.125315 JN:PHYSICAL REVIEW B PY:2011
TC:22 AU: Venkatachalapathy, Vishnukanthan;Galeckas, Augustinas;Trunk, Mareike;Zhang, Tianchong;Azarov, Alexander;Kuznetsov, Andrej Yu;
10:428:2 Cd diffusion and thermal stability of CdZnO/ZnO heterostructures
DOI:10.1063/1.3639129 JN:APPLIED PHYSICS LETTERS PY:2011
TC:9 AU: Azarov, A. Yu.;Zhang, T. C.;Svensson, B. G.;Kuznetsov, A. Yu.;
10:428:3 Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing
DOI:10.1016/j.jcrysgro.2010.09.056 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Venkatachalapathy, Vishnukanthan;Galeckas, Augustinas;Sellappan, Raja;Chakarov, Dinko;Kuznetsov, Andrej Yu.;
10:428:4 Carrier dynamics in linearly and step graded bandgap Zn1-xCdxO structures
DOI:10.1063/1.4807387 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Trunk, M.;Galeckas, A.;Venkatachalapathy, V.;Azarov, A. Yu.;Kuznetsov, A. Yu.;
10:428:5 Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
DOI:10.1063/1.3462394 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Venkatachalapathy, Vishnukanthan;Galeckas, Augustinas;Zubiaga, Asier;Tuomisto, Filip;Kuznetsov, Andrej Yu.;
10:428:6 On the interplay of point defects and Cd in non-polar ZnCdO films
DOI:10.1063/1.4775396 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Zubiaga, A.;Reurings, F.;Tuomisto, F.;Plazaola, F.;Garcia, J. A.;Kuznetsov, A. Yu.;Egger, W.;Zuniga-Perez, J.;Munoz-Sanjose, V.;
10:428:7 Nanoscale Structure, Composition, and Charge Transport Analysis of Transparent Conducting Oxide Nanowires Written by Focused Ion Beam Implantation
DOI:10.1021/ja9092242 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:2 AU: Sosa, Norma E.;Chen, Christopher;Liu, Jun;Xie, Sujing;Marks, Tobin J.;Hersam, Mark C.;
10:428:8 Stability and electronic properties of ZnxCd1-xO alloys
DOI:10.1016/j.matchemphys.2009.10.027 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:13 AU: Zaoui, A.;Zaoui, M.;Kadmi, S.;Boukortt, A.;Bouhafs, B.;
10:428:9 Large-scale, nonsubtractive patterning of transparent conducting oxides by ion bombardment
DOI:10.1063/1.3610444 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Sosa, Norma E.;Chen, Christopher;Liu, Jun;Marks, Tobin J.;Hersam, Mark C.;
10:428:10 Surface/strain energy balance controlling preferred orientation in CdZnO films
DOI:10.1063/1.3632071 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Zhang, T. C.;Kuznetsov, A. Yu.;
10:428:11 Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD
DOI:10.1016/j.jcrysgro.2014.04.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Sarkijarvi, Suvi;Sintonen, Sakari;Tuomisto, Filip;Bosund, Markus;Suihkonen, Sami;Lipsanen, Harri;
10:429:1 ZnO thin film synthesis by reactive radio frequency magnetron sputtering
DOI:10.1016/j.apsusc.2013.10.044 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Senay, Volkan;Pat, Suat;Korkmaz, Sadan;Aydogmus, Tuna;Elmas, Saliha;Ozen, Soner;Ekem, Naci;Balbag, M. Zafer;
10:429:2 Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films
DOI:10.1016/j.mssp.2011.10.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:3 AU: Zhang, Bo;
10:429:3 Effect of inserting a buffer layer on the characteristics of transparent conducting impurity-doped ZnO thin films prepared by dc magnetron sputtering
DOI:10.1016/j.tsf.2010.08.093 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Nomoto, Jun-ichi;Oda, Jun-ichi;Miyata, Toshihiro;Minami, Tadatsugu;
10:429:4 The influence of homo-buffer layer on structural, optical and electrical properties of ZnO:Al films
DOI:10.1016/j.apsusc.2013.06.158 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Li, Q. K.;Wang, J. B.;Li, B.;Zhong, X. L.;Wang, F.;Tan, C. B.;
10:429:5 Deposition of Al doped ZnO thin films on the different substrates with radio frequency magnetron sputtering
DOI:10.1016/j.jnoncrysol.2012.09.024 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:8 AU: Elmas, Saliha;Korkmaz, Sadan;
10:429:6 Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering
DOI:10.1016/j.apsusc.2011.12.057 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Kim, Y. S.;Heo, S. B.;Lee, H. M.;Lee, Y. J.;Kim, I. S.;Kang, M. S.;Choi, D. H.;Lee, B. H.;Kim, M. G.;Kim, Daeil;
10:429:7 Improved electrical and optical properties of GZO films with a thin TiO2 buffer layer deposited by RF magnetron sputtering
DOI:10.1016/j.ceramint.2013.07.029 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Kim, Daeil;
10:429:8 Electrical and structural properties of multicomponent transparent conducting oxide films prepared by co-sputtering of AZO and ITO
DOI:10.1016/j.jnoncrysol.2010.07.024 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:5 AU: Kim, Dong-Ho;Kim, Hye-Ri;Lee, Sung-Hun;Byon, Eungsun;Lee, Gun-Hwan;
10:429:9 Low-indium content bilayer transparent conducting oxide thin films as effective anodes in organic photovoltaic cells
DOI:10.1016/j.tsf.2009.10.005 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Liu, Jun;Hains, Alexander W.;Wang, Lian;Marks, Tobin J.;
10:429:10 Effect of surfactants and digestion time on nano crystalline cerium oxide characteristics synthesized by differential precipitation
DOI:10.1016/j.ceramint.2014.04.112 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Heidari, Fatemeh;Iranichah, Abdullah;
10:429:11 Transparent UV-absorbers thin films of zinc oxide: Ceria system synthesized via sol-gel process
DOI:10.1016/j.optmat.2012.06.016 JN:OPTICAL MATERIALS PY:2012
TC:2 AU: de Lima, Juliana Fonseca;Martins, Renata Figueredo;Serra, Osvaldo Antonio;
10:429:12 Spatial resistivity distribution of transparent conducting impurity-doped ZnO thin films deposited on substrates by dc magnetron sputtering
DOI:10.1116/1.3357284 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:3 AU: Minami, Tadatsugu;Oda, Jun-ichi;Nomoto, Jun-ichi;Miyata, Toshihiro;
10:430:1 Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering
DOI:10.1016/j.tsf.2012.03.015 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Jin, H.;Zhou, J.;Dong, S. R.;Feng, B.;Luo, J. K.;Wang, D. M.;Milne, W. I.;Yang, C. Y.;
10:430:2 Fully crystallized ultrathin ITO films deposited by sputtering with in-situ electron beam irradiation for touch-sensitive screens
DOI:10.1016/j.ceramint.2014.03.145 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Wie, Sung-Min;Hong, Chan-Hwa;Oh, Seung Kyu;Cheong, Woo-Seok;Yoon, Young Joon;Kwak, Joon Seop;
10:430:3 Formation of Orientation Adhesion and Dendritic Crystal of ZnO Nanocrystallites
DOI:10.1080/10584587.2013.792607 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Guo, Yun;Yang, Gang;Shi, Jinhe;Wang, Lirong;Gao, Qun;
10:430:4 Investigation of brittle failure in transparent conductive oxide and permeation barrier oxide multilayers on flexible polymers
DOI:10.1016/j.tsf.2009.08.057 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Lee, Gun-Hwan;Yun, Jungheum;Lee, Sunghun;Jeong, Yujeong;Jung, Jae-Hye;Cho, Sang-Hyun;
10:430:5 Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays
DOI:10.1016/j.tsf.2009.09.166 JN:THIN SOLID FILMS PY:2010
TC:17 AU: Hanada, Toru;Negishi, Tuyoto;Shiroishi, Isao;Shiro, Takashi;
10:430:6 Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition
DOI:10.1016/j.jallcom.2013.10.025 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Krishnaprasad, P. S.;Antony, Aldrin;Rojas, Fredy;Bertomeu, Joan;Jayaraj, M. K.;
10:430:7 Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics
DOI:10.1016/j.tsf.2010.03.061 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Cho, Kwang-Hwan;Kang, Min-Gyu;Oh, Seung-Min;Kang, Chong-Yun;Lee, YoungPak;Yoon, Seok-Jin;
10:430:8 Investigation of Barrier Layer Deposited on Flexible Polymers Substrate by Facing Target Sputtering System
DOI:10.1080/15421406.2012.691758 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:0 AU: Cho, Sang Hyun;Lee, Sung Ho;Kim, Hyo Jin;Song, Pung Keun;
10:430:9 Properties of ITO (Indium Tin Oxide) Film Deposited by Ion-Beam-Assisted Sputter
DOI:10.1080/15421406.2012.691772 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:2 AU: Lee, Sung Ho;Cho, Sang Hyun;Kim, Hyo Jin;Kim, Sung Hong;Lee, Sang Geul;Song, Kyu Ho;Song, Pung Keun;
10:430:10 Flexible strain sensors fabricated with carbon nano-tube and carbon nano-fiber composite thin films
DOI:10.1016/j.tsf.2010.04.108 JN:THIN SOLID FILMS PY:2010
TC:19 AU: Chang, Fuh-Yu;Wang, Ruoh-Huey;Yang, Hsiharng;Lin, Yu-Hsien;Chen, Tse-Min;Huang, Shu-Jiuan;
10:430:11 Electro-Optical Properties of Index Matched ITO-PET Film for Touch Panel Application
DOI:10.1080/15421406.2012.708842 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2012
TC:2 AU: Oh, Chang Seok;Lee, Sang Mun;Kim, Eun Hye;Lee, Eun-Woo;Park, Lee Soon;
10:431:1 Hydrothermal synthesis of novel SnO2 nanoflowers and their gas-sensing properties
DOI:10.1016/j.matlet.2013.04.010 JN:MATERIALS LETTERS PY:2013
TC:17 AU: Wu, Mingyu;Zeng, Wen;Li, Yanqiong;
10:431:2 Preparation of Band Gap Tunable SnO2 Nanotubes and Their Ethanol Sensing Properties
DOI:10.1021/la104529h JN:LANGMUIR PY:2011
TC:35 AU: Shi, Liang;Lin, Hailin;
10:431:3 An inward etching route to synthesize ZnSn(OH)(6) nanoboxes with enhanced ethanol sensing property
DOI:10.1016/j.matlet.2014.08.049 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Zhang, Huihui;Song, Peng;Han, Dan;Cao, Qian;Yang, Zhongxi;Wang, Qi;
10:431:4 Hollow alpha-Fe2O3 quasi-cubic structures: Hydrothermal synthesis and gas sensing properties
DOI:10.1016/j.matlet.2014.01.047 JN:MATERIALS LETTERS PY:2014
TC:12 AU: Zhou, Xin;Wang, Chen;Feng, Wei;Sun, Peng;Li, Xiaowei;Lu, Geyu;
10:431:5 Synthesis of hollow SnO2 nanobelts and their application in acetone sensor
DOI:10.1016/j.matlet.2014.06.112 JN:MATERIALS LETTERS PY:2014
TC:20 AU: Li, W. Q.;Ma, S. Y.;Luo, J.;Mao, Y. Z.;Cheng, L.;Gengzang, D. J.;Xu, X. L.;Yan, S. H.;
10:431:6 Facile Hydrothermal Synthesis and Basic Gas-Sensing Properties of Two Three-Dimensional Nanostructures of SnO2
DOI:10.1155/2014/954734 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Xu, Lingna;Chen, Weigen;Wang, Caisheng;Gao, Tuoyu;Zhou, Qu;
10:431:7 Alpha-Fe2O3@ZnO heterostructured nanotubes for gas sensing
DOI:10.1016/j.matlet.2012.02.086 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Wang, Fenglong;Liu, Jiurong;Wang, Xinzhen;Kong, Jing;Qiu, Song;Lu, Guixia;He, Cuizhu;
10:431:8 SnO2/CuO nano-hybrid foams synthesized by electrochemical deposition and their gas sensing properties
DOI:10.1016/j.matlet.2013.04.036 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Jeun, Jeong-Hoon;Kim, Dai-Hong;Hong, Seong-Hyeon;
10:431:9 Facile hard template approach for synthetic hectorite hollow microspheres
DOI:10.1016/j.matlet.2014.04.067 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Sawant, Sandesh Y.;Pawar, Radheshyam R.;Somani, Rajesh S.;Bajaj, Hari C.;
10:432:1 Single-valley quantum Hall ferromagnet in a dilute MgxZn1-xO/ZnO strongly correlated two-dimensional electron system
DOI:10.1103/PhysRevB.85.075302 JN:PHYSICAL REVIEW B PY:2012
TC:14 AU: Kozuka, Y.;Tsukazaki, A.;Maryenko, D.;Falson, J.;Bell, C.;Kim, M.;Hikita, Y.;Hwang, H. Y.;Kawasaki, M.;
10:432:2 Rashba spin-orbit interaction in a MgxZn1-xO/ZnO two-dimensional electron gas studied by electrically detected electron spin resonance
DOI:10.1103/PhysRevB.87.205411 JN:PHYSICAL REVIEW B PY:2013
TC:8 AU: Kozuka, Y.;Teraoka, S.;Falson, J.;Oiwa, A.;Tsukazaki, A.;Tarucha, S.;Kawasaki, M.;
10:432:3 Insulating phase of a two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures below v=1/3
DOI:10.1103/PhysRevB.84.033304 JN:PHYSICAL REVIEW B PY:2011
TC:16 AU: Kozuka, Y.;Tsukazaki, A.;Maryenko, D.;Falson, J.;Akasaka, S.;Nakahara, K.;Nakamura, S.;Awaji, S.;Ueno, K.;Kawasaki, M.;
10:432:4 Temperature-Dependent Magnetotransport around nu=1/2 in ZnO Heterostructures
DOI:10.1103/PhysRevLett.108.186803 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:13 AU: Maryenko, D.;Falson, J.;Kozuka, Y.;Tsukazaki, A.;Onoda, M.;Aoki, H.;Kawasaki, M.;
10:432:5 Correlation-Enhanced Effective Mass of Two-Dimensional Electrons in MgxZn1-xO/ZnO Heterostructures
DOI:10.1103/PhysRevLett.109.246401 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:6 AU: Kasahara, Y.;Oshima, Y.;Falson, J.;Kozuka, Y.;Tsukazaki, A.;Kawasaki, M.;Iwasa, Y.;
10:432:6 Magneto-photoluminescence of charged excitons from MgxZn1-xO/ZnO heterojunctions
DOI:10.1103/PhysRevB.87.085312 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Makino, T.;Segawa, Y.;Tsukazaki, A.;Saito, H.;Takeyama, S.;Akasaka, S.;Nakahara, K.;Kawasaki, M.;
10:432:7 Electron spin resonance of Zn1-xMgxO thin films grown by plasma-assisted molecular beam epitaxy
DOI:10.1063/1.3477951 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Wassner, T. A.;Laumer, B.;Althammer, M.;Goennenwein, S. T. B.;Stutzmann, M.;Eickhoff, M.;Brandt, M. S.;
10:432:8 Enhanced quantum oscillatory magnetization and nonequilibrium currents in an interacting two-dimensional electron system in MgZnO/ZnO with repulsive scatterers
DOI:10.1103/PhysRevB.89.075307 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Brasse, M.;Sauther, S. M.;Falson, J.;Kozuka, Y.;Tsukazaki, A.;Heyn, Ch.;Wilde, M. A.;Kawasaki, M.;Grundler, D.;
10:432:9 Magnetic thaw down and boil-off of electrons in the quantum Hall effect regime due to magnetoacceptors in GaAs/GaAlAs heterostructures
DOI:10.1103/PhysRevB.86.085321 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Bisotto, I.;Chaubet, C.;Raymond, A.;Harmand, J. C.;Kubisa, M.;Zawadzki, W.;
10:433:1 Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted pulsed laser deposition grown ZnO/sapphire film
DOI:10.1063/1.3284091 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Pandey, B.;Ghosh, S.;Srivastava, P.;Kumar, P.;Kanjilal, D.;Zhou, S.;Schmidt, H.;
10:433:2 Effect of oxygen defects on ferromagnetic of undoped ZnO
DOI:10.1063/1.3601107 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:31 AU: Liu, Weijing;Li, Wenwu;Hu, Zhigao;Tang, Zheng;Tang, Xiaodong;
10:433:3 Structural modification by Li3+ ion irradiation and intrinsic magnetic properties of un-irradiated and Li3+ irradiated Zn-0.96 Mn0.04O samples
DOI:10.1016/j.jallcom.2013.04.003 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Neogi, S. K.;Chattopadhyay, S.;Karmakar, R.;Banerjee, Aritra;Bandyopadhyay, S.;Banerjee, A.;
10:433:4 Coexistence of intrinsic and extrinsic origins of room temperature ferromagnetism in as implanted and thermally annealed ZnO films probed by x-ray absorption spectroscopy
DOI:10.1063/1.4804253 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Satyarthi, P.;Ghosh, S.;Pandey, B.;Kumar, P.;Chen, C. L.;Dong, C. L.;Pong, W. F.;Kanjilal, D.;Asokan, K.;Srivastava, P.;
10:433:5 Tuning the magnetic properties of Zn1-xCoxO films
DOI:10.1016/j.jmmm.2009.04.024 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:9 AU: Ney, V.;Ye, S.;Kammermeier, T.;Ollefs, K.;Ney, A.;Kaspar, T. C.;Chambers, S. A.;Wilhelm, F.;Rogalev, A.;
10:433:6 Probing origin of room temperature ferromagnetism in Ni ion implanted ZnO films with x-ray absorption spectroscopy
DOI:10.1063/1.3676260 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Srivastava, P.;Ghosh, S.;Joshi, B.;Satyarthi, P.;Kumar, P.;Kanjilal, D.;Buerger, D.;Zhou, S.;Schmidt, H.;Rogalev, A.;Wilhelm, F.;
10:433:7 Magnetic and Raman scattering studies of Co-doped ZnO thin films grown by pulsed laser deposition
DOI:10.1007/s00339-013-7875-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Aravind, Arun;Hasna, K.;Jayaraj, M. K.;Kumar, Mukesh;Chandra, Ramesh;
10:433:8 Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni2+ ion implanted zinc oxide (ZnO) thin films
DOI:10.1007/s00339-012-6785-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Joshi, B.;Ghosh, S.;Srivastava, P.;Kumar, P.;Kanjilal, D.;
10:433:9 Modulation effects of Cu doping on magnetic properties of Zn(Ni)O: First-principle calculations
DOI:10.1016/j.jmmm.2011.06.067 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:3 AU: Li, W. Q.;Cao, J. X.;Zhang, J. H.;Ding, J. W.;
10:434:1 ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer
DOI:10.1016/j.materresbull.2012.05.054 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Chen, Mingming;Zhang, Quanlin;Su, Longxing;Su, Yuquan;Cao, Jiashi;Zhu, Yuan;Wu, Tianzhun;Gui, Xuchun;Yang, Chunlei;Xiang, Rong;Tang, Zikang;
10:434:2 Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering
DOI:10.1016/j.apsusc.2010.07.091 JN:APPLIED SURFACE SCIENCE PY:2010
TC:31 AU: Sun, Jian;Liu, Feng-Juan;Huang, Hai-Qin;Zhao, Jian-Wei;Hu, Zuo-Fu;Zhang, Xi-Qing;Wang, Yong-Sheng;
10:434:3 On the origin of intrinsic donors in ZnO
DOI:10.1016/j.apsusc.2009.12.040 JN:APPLIED SURFACE SCIENCE PY:2010
TC:13 AU: Sun, F.;Shan, C. X.;Wang, S. P.;Li, B. H.;Zhang, J. Y.;Zhang, Z. Z.;Zhao, D. X.;Yao, B.;Shen, D. Z.;Fan, X. W.;
10:434:4 A route to single-crystalline ZnO films with low residual electron concentration
DOI:10.1016/j.jcrysgro.2010.07.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Liu, J. S.;Shan, C. X.;Wang, S. P.;Sun, F.;Yao, B.;Shen, D. Z.;
10:434:5 Facile fabrication of ZnO nanowire-based UV sensors by focused ion beam micromachining and thermal oxidation
DOI:10.1016/j.apsusc.2013.05.140 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Chao, Liang-Chiun;Ye, Chi-Chao;Chen, Yi-Pei;Yu, Hua-Zhong;
10:434:6 Suppression of oxygen vacancies in Be alloyed ZnO
DOI:10.1016/j.jallcom.2013.04.174 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Chen, Mingming;Zhu, Yuan;Su, Longxing;Zhang, Quanlin;Xiang, Rong;Gui, Xuchun;Wu, Tianzhun;Cao, Xingzhong;Zhang, Peng;Wang, Baoyi;Tang, Zikang;
10:434:7 The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum
DOI:10.1063/1.4896683 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, S. S.;Pan, X. H.;Chen, W.;Zhang, H. H.;Dai, W.;Ding, P.;Huang, J. Y.;Lu, B.;Ye, Z. Z.;
10:434:8 Low dark current and high speed ZnO metal-semiconductor-metal photodetector on SiO2/Si substrate
DOI:10.1063/1.4899297 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Caliskan, Deniz;Butun, Bayram;Cakir, M. Cihan;Ozcan, Sadan;Ozbay, Ekmel;
10:434:9 Correlations between low temperature thermoluminescence and oxygen vacancies in ZnO crystals
DOI:10.1063/1.3556743 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Wang, Y.;Yang, B.;Can, N.;Townsend, P. D.;
10:434:10 Zinc Oxide Nanoparticle Photodetector
DOI:10.1155/2012/602398 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:4 AU: Chang, Sheng-Po;Chen, Kuan-Jen;
10:434:11 Metal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrate
DOI:10.1116/1.4794526 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:8 AU: Caliskan, Deniz;Butun, Bayram;Ozcan, Sadan;Ozbay, Ekmel;
10:434:12 Indications of bulk property changes from surface ion implantation
DOI:10.1080/14786435.2010.518986 JN:PHILOSOPHICAL MAGAZINE PY:2011
TC:3 AU: Wang, Y.;Yang, B.;Can, N.;Townsend, P. D.;
10:435:1 A new precursor strategy to prepare ZnCo2O4 nanorods and their excellent catalytic activity for thermal decomposition of ammonium perchlorate
DOI:10.1016/j.apsusc.2013.01.022 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Jia, Zhigang;Ren, Daping;Wang, Qiuze;Zhu, Rongsun;
10:435:2 Exceptional activity of mesoporous beta-MnO2 in the catalytic thermal sensitization of ammonium perchlorate
DOI:10.1039/c2jm16169a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:23 AU: Chandru, R. Arun;Patra, Snehangshu;Oommen, Charlie;Munichandraiah, N.;Raghunandan, B. N.;
10:435:3 Generalized preparation of metal oxalate nano/submicro-rods by facile solvothermal method and their calcined products
DOI:10.1016/j.matlet.2012.02.067 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Jia, Zhigang;Ren, Daping;Xu, Lixin;
10:435:4 Investigation of the catalytic activity of nano-sized CuO, Co3O4 and CuCo2O4 powders on thermal decomposition of ammonium perchlorate
DOI:10.1016/j.powtec.2011.10.045 JN:POWDER TECHNOLOGY PY:2012
TC:26 AU: Alizadeh-Gheshlaghi, Ebrahim;Shaabani, Behrouz;Khodayari, Ali;Azizian-Kalandaragh, Yashar;Rahimi, Rahmatollah;
10:435:5 Novel urchin-like Pd nanostructures prepared by a simple replacement reaction and their catalytic properties
DOI:10.1016/j.apsusc.2011.04.085 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Cheng, Zhipeng;Xu, Jiming;Zhong, Hui;Chu, XiaoZhong;Song, Juan;
10:435:6 Effect of anatase-brookite mixed phase titanium dioxide nanoparticles on the high temperature decomposition kinetics of ammonium perchlorate
DOI:10.1016/j.matchemphys.2013.01.054 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:4 AU: Vargeese, Anuj A.;Muralidharan, Krishnamurthi;
10:435:7 Facile preparation of mesoporous nickel oxide microspheres and their adsorption property for methyl orange from aqueous solution
DOI:10.1016/j.mssp.2014.06.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Jia, Zhigang;Liu, Jianhong;Wang, Qiuze;Ye, Mingfu;Zhu, Rongsun;
10:435:8 Cu/Fe hydrotalcite derived mixed oxides as new catalyst for thermal decomposition of ammonium perchlorate
DOI:10.1016/j.matlet.2010.04.061 JN:MATERIALS LETTERS PY:2010
TC:12 AU: Liu, Hongbo;Jiao, Qingze;Zhao, Yun;Li, Hansheng;Sun, Chongbo;Li, Xuefei;Wu, Hongyu;
10:435:9 Synthesis and characterization of KNd2Ti3O9.5 nanocrystal and its catalytic effect on decomposition of ammonium perchlorate
DOI:10.1016/j.matchemphys.2010.10.051 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Zhang, Lili;Zhang, Weiguang;Zhong, Hui;Lu, Lude;Yang, Xujie;Wang, Xin;
10:435:10 Thermal decomposition of ammonium perchlorate in the presence of Cu(OH)(2)center dot 2Cr(OH)(3) nanoparticles
DOI:10.1016/j.powtec.2014.08.038 JN:POWDER TECHNOLOGY PY:2014
TC:3 AU: Zheng, Xiaodan;Li, Ping;Zheng, Sili;Zhang, Yi;
10:435:11 Preparation of cobalt oxalate powders with the presence of a pulsed electromagnetic field
DOI:10.1016/j.powtec.2009.12.015 JN:POWDER TECHNOLOGY PY:2010
TC:7 AU: Du, Huiling;Wang, Jianzhong;Wang, Bing;Cang, Daqiang;
10:436:1 Solution-free and catalyst-free synthesis of ZnO-based nanostructured TCOs by PED and vapor phase growth techniques
DOI:10.1088/0957-4484/23/19/194008 JN:NANOTECHNOLOGY PY:2012
TC:11 AU: Calestani, D.;Pattini, F.;Bissoli, F.;Gilioli, E.;Villani, M.;Zappettini, A.;
10:436:2 Influences of Target and Liquid Media on Morphologies and Optical Properties of ZnO Nanoparticles Prepared by Laser Ablation in Solution
DOI:10.1111/j.1551-2916.2011.04643.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:8 AU: Hu, Xilun;Gong, Haibo;Xu, Hongyan;Wei, Haoming;Cao, Bingqiang;Liu, Guangqiang;Zeng, Haibo;Cai, Weiping;
10:436:3 Sodium-Doped ZnO Nanowires Grown by High-pressure PLD and their Acceptor-Related Optical Properties
DOI:10.1111/jace.12941 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:3 AU: Qiu, Zhiwen;Yang, Xiaopeng;Han, Jun;Zhang, Peng;Cao, Bingqiang;Dai, Zhengfei;Duan, Guotao;Cai, Weiping;
10:436:4 The Effect of Aluminum on Electrical Properties of ZnO Varistors
DOI:10.1111/j.1551-2916.2010.03787.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:13 AU: Long, Wangcheng;Hu, Jun;Liu, Jun;He, Jinliang;Zong, Rong;
10:436:5 A novel route to ZnO nanorods with small diameters of 20 nm
DOI:10.1016/j.materresbull.2013.08.036 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:1 AU: Zhou, Xiaoguang;Liao, Lixia;Tian, Chungui;
10:436:6 A novel maskless approach towards aligned, density modulated and multi-junction ZnO nanowires for enhanced surface area and light trapping solar cells
DOI:10.1088/0957-4484/21/31/315602 JN:NANOTECHNOLOGY PY:2010
TC:19 AU: Kevin, M.;Fou, Y. H.;Wong, A. S. W.;Ho, G. W.;
10:436:7 Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures
DOI:10.1039/b926475b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:15 AU: Cao, B. Q.;Zuniga-Perez, J.;Czekalla, C.;Hilmer, H.;Lenzner, J.;Boukos, N.;Travlos, A.;Lorenz, M.;Grundmann, M.;
10:436:8 Patterned growth of vertically-aligned ZnO nanorods on a flexible platform for feasible transparent and conformable electronics applications
DOI:10.1039/c2jm00027j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:9 AU: Ong, W. L.;Low, Q. X.;Huang, W.;van Kan, J. A.;Ho, G. W.;
10:436:9 Effect of ZnO seed layer thickness on hierarchical ZnO nanorod growth on flexible substrates for application in dye-sensitised solar cells
DOI:10.1007/s11051-013-2115-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Peiris, T. A. Nirmal;Alessa, Hussain;Sagu, Jagdeep S.;Bhatti, Ijaz Ahmad;Isherwood, Patrick;Wijayantha, K. G. Upul;
10:436:10 Growth of Al-doped ZnO films with tilted nano-columns on r-cut sapphire substrates by pulsed laser deposition
DOI:10.1016/j.tsf.2012.09.052 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Lee, Joon Hwan;Lu, Tianlin;Cho, Sungmee;Khatkatay, Fauzia;Chen, Li;Wang, Haiyan;
10:437:1 Evidence of Cobalt-Vacancy Complexes in Zn1-xCoxO Dilute Magnetic Semiconductors
DOI:10.1103/PhysRevLett.107.127206 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:32 AU: Ciatto, G.;Di Trolio, A.;Fonda, E.;Alippi, P.;Testa, A. M.;Bonapasta, A. Amore;
10:437:2 Realizing Ferromagnetic Coupling in Diluted Magnetic Semiconductor Quantum Dots
DOI:10.1021/ja411900w JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2014
TC:4 AU: Yan, Wensheng;Liu, Qinghua;Wang, Chao;Yang, Xiaoyu;Yao, Tao;He, Jingfu;Sun, Zhihu;Hu, Fengchun;Wu, Ziyu;Xie, Zhi;Wei, Shiqiang;
10:437:3 Determination of the role of O vacancy in Co:ZnO magnetic film
DOI:10.1063/1.3456085 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Yan, Wensheng;Jiang, Qinghua;Sun, Zhihu;Yao, Tao;Hu, Fengchun;Wei, Shiqiang;
10:437:4 X-ray absorption spectra of InxGa1-xN alloys with insight from atom-specific simulations
DOI:10.1103/PhysRevB.86.155211 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Amidani, L.;Filippone, F.;Bonapasta, A. Amore;Ciatto, G.;Lebedev, V.;Knuebel, A.;Boscherini, F.;
10:437:5 Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition
DOI:10.1016/j.apsusc.2013.10.081 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Li, Qiang;Wang, Yuyin;Liu, Jiandang;Kong, Wei;Ye, Bangjiao;
10:437:6 Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling
DOI:10.1063/1.3319511 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Knuebel, A.;Polyakov, V. M.;Kirste, L.;Aidam, R.;
10:437:7 Influence of the surface structure on the magnetic properties of Zn1-xCoxO
DOI:10.1063/1.4772473 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Ciatto, G.;Di Trolio, A.;Fonda, E.;Amidani, L.;Boscherini, F.;Thomasset, M.;Alippi, P.;Bonapasta, A. Amore;
10:437:8 An XANES and XES investigation of the electronic structure of indium rich InxGa1-xN films
DOI:10.1016/j.jallcom.2011.07.059 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:3 AU: Demchenko, I. N.;Chernyshova, M.;Piskorska-Hommel, E.;Minikayev, R.;Domagala, J. Z.;Yamaguchi, T.;Stolte, W. C.;Lawniczak-Jablonska, K.;
10:438:1 Effect of surface modification and UVA photoactivation on antibacterial bioactivity of zinc oxide powder
DOI:10.1016/j.apsusc.2013.11.152 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Ann, Ling Chuo;Mahmud, Shahrom;Bakhori, Siti Khadijah Mohd;Sirelkhatim, Amna;Mohamad, Dasmawati;Hasan, Habsah;Seeni, Azman;Rahman, Rosliza Abdul;
10:438:2 Synthesis and characterization of ZnO tetrapods for optical and antibacterial applications
DOI:10.1016/j.tsf.2010.08.077 JN:THIN SOLID FILMS PY:2010
TC:28 AU: Tawale, J. S.;Dey, K. K.;Pasricha, R.;Sood, K. N.;Srivastava, A. K.;
10:438:3 Electron spectroscopy imaging and surface defect configuration of zinc oxide nanostructures under different annealing ambient
DOI:10.1016/j.apsusc.2012.10.152 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Ann, Ling Chuo;Mahmud, Shahrom;Bakhori, Siti Khadijah Mohd;
10:438:4 Antibacterial responses of zinc oxide structures against Staphylococcus aureus, Pseudomonas aeruginosa and Streptococcus pyogenes
DOI:10.1016/j.ceratnint.2013.10.008 JN:CERAMICS INTERNATIONAL PY:2014
TC:10 AU: Ann, Ling Chuo;Mahmud, Shahrom;Bakhori, Siti Khadijah Mohd;Sirelkhatim, Amna;Mohamad, Dasmawati;Hasan, Habsah;Seeni, Azman;Rahman, Rosliza Abdul;
10:438:5 One-dimensional growth of zinc oxide nanostructures from large micro-particles in a highly rapid synthesis
DOI:10.1016/j.jallcom.2011.01.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:21 AU: Mahmud, Shahrom;
10:438:6 Uniform Hierarchical Frameworks Patterned by Movable Magnetic Microparticles
DOI:10.1021/nn2003794 JN:ACS NANO PY:2011
TC:7 AU: Wang, Xiaolei;Zhu, Hui;Bao, Yi;Yang, Fan;Yang, Xiurong;
10:438:7 A detailed approach to study the antibacterial mechanisms of nanostructure
DOI:10.1016/j.apsusc.2011.12.124 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Fang, Fang;Fang, Xuan;Li, Jinhua;Wei, Zhipeng;Wang, Xin;Wang, Xiaohua;
10:438:8 Optical and electrical properties of individual p-type ZnO microbelts with Ag dopant
DOI:10.1039/c1jm13104d JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:8 AU: Fang, Fang;Zhao, Dongxu;Fang, Xuan;Li, Jinhua;Wei, Zhipeng;Wang, Shaozhuan;Wu, Jilong;Wang, Xiaohua;
10:438:9 Surface reconstruction of ZnO nanowire arrays via solvent-evaporation-induced self-assembly
DOI:10.1016/j.apsusc.2010.11.027 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Fang, Fang;Zhao, Dongxu;Li, Binghui;Zhang, Zhenzhong;Shen, Dezhen;Wang, Xiaohua;
10:439:1 In Situ Transmission Electron Microscopy Investigation on Fatigue Behavior of Single ZnO Wires under High-Cycle Strain
DOI:10.1021/nl403426c JN:NANO LETTERS PY:2014
TC:17 AU: Li, Peifeng;Liao, Qingliang;Yang, Shize;Bai, Xuedong;Huang, Yunhua;Yan, Xiaoqin;Zhang, Zheng;Liu, Shuo;Lin, Pei;Kang, Zhuo;Zhang, Yue;
10:439:2 Scanning Probe Study on the Piezotronic Effect in ZnO Nanomaterials and Nanodevices
DOI:10.1002/adma.201104382 JN:ADVANCED MATERIALS PY:2012
TC:51 AU: Zhang, Yue;Yan, Xiaoqin;Yang, Ya;Huang, Yunhua;Liao, Qingliang;Qi, Junjie;
10:439:3 Electrical breakdown of ZnO nanowires in metal-semiconductor-metal structure
DOI:10.1063/1.3457169 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Zhang, Qi;Qi, Junjie;Yang, Ya;Huang, Yunhua;Li, Xin;Zhang, Yue;
10:439:4 The Smallest Resonator Arrays in Atmosphere by Chip-Size-Grown Nanowires with Tunable Q-factor and Frequency for Subnanometer Thickness Detection
DOI:10.1021/nl504135x JN:NANO LETTERS PY:2015
TC:0 AU: Jiang, Chengming;Tang, Chaolong;Song, Jinhui;
10:439:5 Electrical and mechanical coupling nanodamage in single ZnO nanobelts
DOI:10.1063/1.3368699 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Yang, Ya;Qi, Junjie;Gu, Yousong;Guo, Wen;Zhang, Yue;
10:439:6 Investigation on the Mechanism of Nanodamage and Nanofailure for Single ZnO Nanowires under an Electric Field
DOI:10.1021/am4044079 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:3 AU: Li, Peifeng;Liao, Qingliang;Zhang, Zheng;Wang, Zengze;Lin, Pei;Zhang, Xiaohui;Kang, Zhuo;Huang, Yunhua;Gu, Yousong;Yan, Xiaoqin;Zhang, Yue;
10:439:7 Significant Photoelectric Property Change Caused by Additional Nano-confinement: A Study of Half-Dimensional Nanomaterials
DOI:10.1002/smll.201400704 JN:SMALL PY:2014
TC:3 AU: Jiang, Chengming;Song, Jinhui;
10:439:8 Electrical failure behaviors of semiconductor oxide nanowires
DOI:10.1088/0957-4484/22/40/405703 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Nie, Anmin;Liu, Jiabin;Dong, Cezhou;Wang, Hongtao;
10:439:9 Shear Modulus Property Characterization of Nanorods
DOI:10.1021/nl3036542 JN:NANO LETTERS PY:2013
TC:2 AU: Jiang, Chengming;Lu, Wenqiang;Song, Jinhui;
10:440:1 Soft-solution route to ZnO nanowall array with low threshold power density
DOI:10.1063/1.3466910 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Jang, Eue-Soon;Chen, Xiaoyuan;Won, Jung-Hee;Chung, Jae-Hun;Jang, Du-Jeon;Kim, Young-Woon;Choy, Jin-Ho;
10:440:2 Microstructure and optical properties of Ag-doped ZnO nanostructures prepared by a wet oxidation doping process
DOI:10.1088/0957-4484/22/10/105706 JN:NANOTECHNOLOGY PY:2011
TC:15 AU: Chen, Ruiqun;Zou, Chongwen;Bian, Jiming;Sandhu, Adarsh;Gao, Wei;
10:440:3 Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors
DOI:10.1016/j.tsf.2010.12.022 JN:THIN SOLID FILMS PY:2011
TC:20 AU: Yuan, Zijian;Zhu, Xiaming;Wang, Xiong;Cai, Xikun;Zhang, Bingpo;Qiu, Dongjiang;Wu, Huizhen;
10:440:4 Growth mechanism of ZnO nanostructures in wet-oxidation process
DOI:10.1016/j.tsf.2010.10.012 JN:THIN SOLID FILMS PY:2011
TC:13 AU: Chen, Ruiqun;Zou, Chongwen;Yan, Xiaodong;Alyamani, Ahmed;Gao, Wei;
10:440:5 Doping transition of doped ZnO nanorods measured by Kelvin probe force microscopy
DOI:10.1016/j.tsf.2011.10.129 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Ben, Chu Van;Cho, Hak Dong;Kang, Tae Won;Yang, Woochul;
10:440:6 Controlled Aspect Ratios of Gold Nanorods in Reduction-Limited Conditions
DOI:10.1155/2011/405853 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:2 AU: Kim, Jong-Yeob;Ah, Chil Seong;Jang, Du-Jeon;
10:440:7 Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors
DOI:10.1016/j.mssp.2012.09.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Choi, Mu Hee;Ma, Tae Young;
10:440:8 Parametric study of self-forming ZnO Nanowall network with honeycomb structure by Pulsed Laser Deposition
DOI:10.1016/j.apsusc.2013.12.014 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: El Zein, B.;Boulfrad, S.;Jabbour, G. E.;Dogheche, E.;
10:440:9 Influence of Ag doping on structural and optical properties of ZnO thin films synthesized by the sol-gel technique
DOI:10.1007/s00339-013-8029-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Chelouche, A.;Djouadi, D.;Merzouk, H.;Aksas, A.;
10:440:10 Influence of Mn doping on structural and optical properties of ZnO nano thin films synthesized by sol-gel technique
DOI:10.1007/s00339-012-7379-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Merzouk, H.;Chelouche, A.;Saoudi, S.;Djouadi, D.;Aksas, A.;
10:440:11 UV-visible light reshaping of gold nanorods
DOI:10.1016/j.matchemphys.2010.01.048 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:5 AU: Al-Sherbini, El-Sayed A. M.;
10:441:1 Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics
DOI:10.1063/1.3294325 JN:APPLIED PHYSICS LETTERS PY:2010
TC:21 AU: Lu, Aixia;Sun, Jia;Jiang, Jie;Wan, Qing;
10:441:2 Tailoring the luminescence emission of ZnO nanostructures by hydrothermal post-treatment in water
DOI:10.1063/1.3443636 JN:APPLIED PHYSICS LETTERS PY:2010
TC:23 AU: Yao, Baodian;Feng, Lin;Cheng, Chun;Loy, Michael M. T.;Wang, Ning;
10:441:3 Improvement of UV emission from highly crystalline ZnO nanoparticles by pulsed laser ablation under O-2/He glow discharge
DOI:10.1063/1.3551534 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Ma, Qiang;Saraswati, Teguh Endah;Ogino, Akihisa;Nagatsu, Masaaki;
10:441:4 Atomic layer deposition of ZnO on thermal SiO2 and Si surfaces using N-2-diluted diethylzinc and H2O2 precursors
DOI:10.1016/j.apsusc.2012.01.054 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Qian, Ke-Jia;Chen, Sun;Zhu, Bao;Chen, Lin;Ding, Shi-Jin;Lu, Hong-Liang;Sun, Qing-Qing;Zhang, David Wei;Chen, Zhenyi;
10:441:5 Photocatalytic properties of hierarchical ZnO flowers synthesized by a sucrose-assisted hydrothermal method
DOI:10.1016/j.apsusc.2012.04.182 JN:APPLIED SURFACE SCIENCE PY:2012
TC:10 AU: Lv, Wei;Wei, Bo;Xu, Lingling;Zhao, Yan;Gao, Hong;Liu, Jia;
10:441:6 SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors
DOI:10.1063/1.3640221 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Kim, Eunkyeom;Kim, Youngill;Kim, Do Han;Lee, Kyoungmi;Parsons, Gregory N.;Park, Kyoungwan;
10:441:7 Suppressing the atmosphere-induced performance instability of solution-grown zinc oxide-nanowire ultra-violet photodetector by hydrothermal treatment in water
DOI:10.1016/j.matchemphys.2013.02.062 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:2 AU: Tzeng, Shi-Kai;Hon, Min-Hsiung;Leu, Ing-Chi;
10:441:8 Ultraviolet photodetector arrays assembled by dielectrophoresis of ZnO nanoparticles
DOI:10.1088/0957-4484/21/11/115501 JN:NANOTECHNOLOGY PY:2010
TC:13 AU: Yan, Wenjing;Mechau, Norman;Hahn, Horst;Krupke, Ralph;
10:441:9 Luminescent properties of ZnO thin films treated by pulse-modulated high-power inductively coupled plasma
DOI:10.1016/j.apsusc.2011.03.078 JN:APPLIED SURFACE SCIENCE PY:2011
TC:0 AU: Wang, J. B.;Hu, Z. S.;Zhong, X. L.;Zhang, Y. J.;Ishigaki, T.;Sekiguchi, T.;
10:441:10 Cathodoluminescence property of ZnO nano-phosphors fabricated by pulsed Nd:YAG laser ablation in plasma circumstance
DOI:10.1016/j.tsf.2009.11.037 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Ma, Qiang;Ogino, Akihisa;Matsuda, Takafumi;Shinji, Kosuke;Nagatsu, Masaaki;
10:441:11 ZnO nanocrystals on SiO2/Si surfaces thermally cleaned in ultrahigh vacuum and characterized using spectroscopic photoemission and low energy electron microscopy
DOI:10.1116/1.3372804 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:1 AU: Ericsson, Leif K. E.;Magnusson, Kjell O.;Zakharov, Alexei A.;
10:441:12 X-ray photoelectron spectroscopy investigations of zinc-magnesium alloy coated steel
DOI:10.1016/j.matchemphys.2010.06.068 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:6 AU: Chen, Sheng;Yan, Fei;Xue, Fei;Yang, Lihong;Liu, Junliang;
10:442:1 Synthesis, characterization, electrical and sensing properties of ZnO nanoparticles
DOI:10.1016/j.apt.2010.02.002 JN:ADVANCED POWDER TECHNOLOGY PY:2010
TC:34 AU: Singh, A. K.;
10:442:2 Structural characterization and observation of variable range hopping conduction mechanism at high temperature in CdSe quantum dot solids
DOI:10.1063/1.4794019 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Sinha, Subhojyoti;Chatterjee, Sanat Kumar;Ghosh, Jiten;Meikap, Ajit Kumar;
10:442:3 Synthesis of porous spherical ZnO nanoparticles and measurement of their gas-sensing property
DOI:10.1016/j.matlet.2014.07.036 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Mao, Y. Z.;Ma, S. Y.;Li, W. Q.;Xu, X. L.;Gengzang, D. J.;Luo, J.;Cheng, L.;
10:442:4 Synthesis and characterization of low-dimensional ZnO nanocrystals in an aqueous solution
DOI:10.1016/j.jallcom.2013.06.184 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Wang, Mao-Hua;Zhou, Fu;Zhang, Bo;Yao, Chao;
10:442:5 One step synthesis of ZnO nanoparticles in free organic medium: Structural and optical characterizations
DOI:10.1016/j.mssp.2014.07.025 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Jaber, B.;Laanab, L.;
10:442:6 The novel, one step and facile synthesis of ZnO nanoparticles using heteropolyoxometalates and their photoluminescence behavior
DOI:10.1016/j.apt.2012.10.008 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:7 AU: Rashidi, Hamed;Ahmadpour, Ali;Bamoharram, Fatemeh F.;Heravi, Majid M.;Ayati, Ali;
10:442:7 NO2 gas sensing properties of Au-functionalized porous ZnO nanosheets enhanced by UV irradiation
DOI:10.1016/j.ceramint.2013.04.035 JN:CERAMICS INTERNATIONAL PY:2013
TC:11 AU: Mun, Youngho;Park, Sunghoon;An, Soyeon;Lee, Chongmu;Kim, Hyoun Woo;
10:442:8 Correlated barrier hopping in ZnO nanorods
DOI:10.1063/1.3594709 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Soosen, Samuel M.;Chandran, Anoop;Koshy, Jiji;George, K. C.;
10:442:9 Synthesis of ZnO nanoparticles in aqueous solution by hyperbranched polymer
DOI:10.1016/j.matlet.2013.03.123 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Zhang, Desuo;Zhang, Guangyu;Liao, Yanfen;Wang, Cheng;Chen, Yuyue;Lin, Hong;Morikawa, Hideaki;
10:442:10 Synthesis of ZnO nanoparticles by hydrothermal method in aqueous rinds extracts of Sapindus rarak DC
DOI:10.1016/j.matlet.2013.12.044 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Maryanti, Evi;Damayanti, Demi;Gustian, Irfan;Yudha S, Salprima;
10:442:11 Anomalous electrical transport properties of polyvinyl alcohol-multiwall carbon nanotubes composites below room temperature
DOI:10.1063/1.3544204 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Chakraborty, G.;Gupta, K.;Meikap, A. K.;Babu, R.;Blau, W. J.;
10:442:12 Synthesis of ZnO@Co2O3-Bi2O3-MnO core-shell structured nanoparticles for varistors applications
DOI:10.1016/j.powtec.2014.04.013 JN:POWDER TECHNOLOGY PY:2014
TC:1 AU: Wang, Mao-Hua;Zhou, Fu;Zhang, Bo;
10:443:1 Combustion synthesis of doped nanocrystalline ZnO powders for varistors applications
DOI:10.1016/j.jeurceramsoc.2011.04.005 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:20 AU: Hembram, K.;Sivaprahasam, D.;Rao, T. N.;
10:443:2 Synthesis and characterization of (CuO)(x)(ZnO)(1-x) composite thin films with tunable optical and electrical properties
DOI:10.1016/j.tsf.2012.06.064 JN:THIN SOLID FILMS PY:2012
TC:13 AU: Caglar, Yasemin;Oral, Dilek Duygu;Caglar, Mujdat;Ilican, Saliha;Thomas, M. Allan;Wu, Keyue;Sun, Zhaoqi;Cui, Jingbiao;
10:443:3 Microwave-assisted hydrothermal synthesis of Ni(OH)(2) architectures and their in situ thermal convention to NiO
DOI:10.1016/j.apt.2010.06.008 JN:ADVANCED POWDER TECHNOLOGY PY:2011
TC:33 AU: Zhu, Zhenfeng;Wei, Na;Liu, Hui;He, Zuoli;
10:443:4 Investigation of structural, morphological and optical properties of nickel zinc oxide films prepared by sol-gel method
DOI:10.1016/j.jallcom.2010.11.054 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:8 AU: Dogan, D. Duygu;Caglar, Yasemin;Ilican, Saliha;Caglar, Mujdat;
10:443:5 MgxZn1-xO (x=0-1) films fabricated by sol-gel spin coating
DOI:10.1016/j.materresbull.2009.12.025 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:12 AU: Caglar, Mujdat;Wu, Junshu;Li, Keyan;Caglar, Yasemin;Ilican, Saliha;Xue, Dongfeng;
10:443:6 pH-dependant structural and morphology evolution of Ni(OH)(2) nanostructures and their morphology retention upon thermal annealing to NiO
DOI:10.1016/j.matchemphys.2011.08.052 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:4 AU: Khan, Yaqoob;Durrani, S. K.;Mehmood, Mazhar;Jan, Abdullah;Abbasi, Mazhar Ali;
10:443:7 Spectroscopic ellipsometry studies of sol-gel-derived Cu-doped ZnO thin films
DOI:10.1016/j.tsf.2014.02.097 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Yang, Shenghong;Zhang, Yueli;Mo, Dang;
10:443:8 Influence of Cr2O3 on ZnO-Bi2O3-MnO2-based varistor ceramics
DOI:10.1016/j.ceramint.2014.02.035 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Ma, Shuai;Xu, Zhijun;Chu, Ruiqing;Hao, Jigong;Liu, Meijun;Cheng, Lihong;Li, Guorong;
10:443:9 Self-aligned nanocrystalline ZnO hexagons by facile solid-state and co-precipitation route
DOI:10.1007/s11051-011-0657-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:1 AU: Thorat, J. H.;Kanade, K. G.;Nikam, L. K.;Chaudhari, P. D.;Panmand, R. P.;Kale, B. B.;
10:443:10 A comparison of chemical structures of soot precursor nanoparticles from liquid fuel combustion in flames and engine
DOI:10.1007/s11051-013-1550-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Paul, Bireswar;Datta, Amitava;Datta, Aparna;Saha, Abhijit;
10:443:11 Low-Temperature Sintering and Electrical Properties of ZnO-Bi2O3-TiO2-Co2O3-MnCO3-Based Varistor with Bi2O3-B2O3 Frit for Multilayer Chip Varistor Applications
DOI:10.1111/j.1551-2916.2010.03866.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:6 AU: Wan, Shuai;Lu, Wenzhong;Wang, Xiaochuan;
10:444:1 Simulation and ZnO nanowires-based generation of a hierarchical structure on an optical fiber core
DOI:10.1016/j.apsusc.2013.04.123 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Jing, Weixuan;Niu, Lingling;Wang, Bing;Chen, Lujia;Jiang, Zhuangde;
10:444:2 Formation of self-aligned ZnO nanorods in aqueous solution
DOI:10.1016/j.jallcom.2009.12.196 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:26 AU: Lockman, Zainovia;Fong, Yeo Pet;Kian, Tan Wai;Ibrahim, Kamarulazizi;Razak, Khairunisak Abdul;
10:444:3 Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates
DOI:10.1016/j.jallcom.2011.02.063 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:5 AU: Martinez, O.;Hortelano, V.;Jimenez, J.;Plaza, J. L.;de Dios, S.;Olvera, J.;Dieguez, E.;Fath, R.;Lozano, J. G.;Ben, T.;Gonzalez, D.;Mass, J.;
10:444:4 Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition
DOI:10.1016/j.apsusc.2012.05.072 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Shi, Zhifeng;Zhang, Shikai;Wu, Bin;Cai, Xupu;Zhang, Jinxiang;Yin, Wei;Wang, Hui;Wang, Jin;Xia, Xiaochuan;Dong, Xin;Zhang, Baolin;Du, Guotong;
10:444:5 Self-assembled nanocolumnar ZnO films chemically deposited on stainless steel with controlled morphology and thickness
DOI:10.1016/j.matlet.2013.09.115 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Rodrigues, Adriana;Alves, Maria C. M.;Morais, Jonder;
10:444:6 Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method
DOI:10.1016/j.apsusc.2010.08.018 JN:APPLIED SURFACE SCIENCE PY:2010
TC:18 AU: Feng, Q. J.;Hu, L. Z.;Liang, H. W.;Feng, Y.;Wang, J.;Sun, J. C.;Zhao, J. Z.;Li, M. K.;Dong, L.;
10:444:7 Synthesis of ZnO Nanowires via Hotwire Thermal Evaporation of Brass (CuZn) Assisted by Vapor Phase Transport of Methanol
DOI:10.1155/2014/105875 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Thandavan, Tamil Many K.;Gani, Siti Meriam Abdul;Wong, Chiow San;Nor, Roslan Md;
10:444:8 Heteroepitaxial growth and surface electronic structures of ordered zinc oxide films on Mo(110) substrates
DOI:10.1016/j.jallcom.2010.04.115 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:4 AU: Xue, M. S.;Li, W.;Wang, F. J.;Lu, J. S.;Yao, J. P.;
10:444:9 Growth and characteristics of annealed ZnO layer on 6H-SiC substrate
DOI:10.1016/j.jcrysgro.2010.05.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Lee, Ju-Young;Kim, Hong Seung;Lee, Won-Jae;Ku, Kap-Ryeol;
10:445:1 Enhancing photoresponsivity of ultra violet photodetectors based on Fe doped ZnO/ZnO shell/core nanorods
DOI:10.1016/j.jallcom.2014.06.157 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Azimirad, R.;Khayatian, A.;Safa, S.;Kashi, M. Almasi;
10:445:2 Ultraviolet photodetectors based on ZnO sheets: The effect of sheet size on photoresponse properties
DOI:10.1016/j.apsusc.2012.02.024 JN:APPLIED SURFACE SCIENCE PY:2012
TC:20 AU: Ardakani, Abbas Ghasempour;Pazoki, Meysam;Mahdavi, Seyed Mohammad;Bahrampour, Ali Reza;Taghavinia, Nima;
10:445:3 A crossbar-type high sensitivity ultraviolet photodetector array based on a one hole-one nanorod configuration via nanoimprint lithography
DOI:10.1088/0957-4484/22/27/275310 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Jeong, Huisu;Kim, Ki Seok;Kim, Yong Hwan;Jeong, Hyun;Song, Hui;Lee, KwangHo;Jeong, Mun Seok;Wang, Deli;Jung, Gun Young;
10:445:4 Effect of zinc nitrate concentration on the structural and the optical properties of ZnO nanostructures
DOI:10.1016/j.apsusc.2010.03.129 JN:APPLIED SURFACE SCIENCE PY:2010
TC:19 AU: Yang, Hee Yeon;Lee, Se Han;Kim, Tae Whan;
10:445:5 Electrodeposition from ZnO nano-rods to nano-sheets with only zinc nitrate electrolyte and its photoluminescence
DOI:10.1016/j.apsusc.2011.05.132 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Bai Xue;Yi Liang;Liu Donglai;Nie Eryong;Sun Congli;Feng Huanhuan;Xu Jingjing;Jin Yong;Jiao Zhifeng;Sun Xiaosong;
10:445:6 Lactic acid aided electrochemical deposition of c-axis preferred orientation of zinc oxide thin films: Structural and morphological features
DOI:10.1016/j.apsusc.2011.06.058 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Whang, Thou-Jen;Hsieh, Mu-Tao;Tsai, Jia-Ming;Lee, Shyan-Jer;
10:445:7 Structural, optical, and electrical properties of Cu2O nanocubes grown on indium-tin-oxide-coated glass substrates by using seed-layer-free electrochemical deposition method
DOI:10.1016/j.apsusc.2012.04.091 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: No, Young Soo;Oh, Do Hyon;Kim, Su Yeon;Yoo, Keon-Ho;Kim, Tae Whan;
10:445:8 Template-based fabrication of Ag-ZnO core-shell nanorod arrays
DOI:10.1016/j.jcrysgro.2010.06.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:6 AU: Chatterjee, Sriparna;Jayakumar, O. D.;Tyagi, Avesh K.;Ayyub, Pushan;
10:446:1 Self-assembled magnetic liposomes from electrospun fibers
DOI:10.1016/j.materresbull.2014.02.026 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Song, Heng-huan;Gong, Xiao;Williams, Gareth R.;Quan, Jing;Nie, Hua-li;Zhu, Li-min;Nan, Er-long;Shao, Ming;
10:446:2 A simple route to form magnetic chitosan nanoparticles from coaxial-electrospun composite nanofibers
DOI:10.1007/s10853-013-7208-x JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:8 AU: Wang, Bin;Zhang, Pei-pei;Williams, Gareth R.;Branford-White, Christopher;Quan, Jing;Nie, Hua-li;Zhu, Li-min;
10:446:3 Ferromagnetism in Electrospun Co-doped SrTiO3 Nanofibers
DOI:10.1007/s10853-012-6717-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:8 AU: Zhang, Wei;Li, He-Ping;Pan, Wei;
10:446:4 Formation and characterization of core-sheath nanofibers through electrospinning and surface-initiated polymerization
DOI:10.1016/j.polymer.2010.07.042 JN:POLYMER PY:2010
TC:17 AU: Ji, Liwen;Lin, Zhan;Li, Ying;Li, Shuli;Liang, Yinzheng;Toprakci, Ozan;Shi, Quan;Zhang, Xiangwu;
10:446:5 Immobilization of cholesterol oxidase to finely dispersed silica-coated maghemite nanoparticles based magnetic fluid
DOI:10.1016/j.apsusc.2010.02.055 JN:APPLIED SURFACE SCIENCE PY:2010
TC:16 AU: Sulek, Franja;Knez, Zeljko;Habulin, Maja;
10:446:6 ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?
DOI:10.1007/s10853-010-4710-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:6 AU: Golmar, F.;Villafuerte, M.;Mudarra Navarro, A.;Rodriguez Torres, C. E.;Barzola-Quiquia, J.;Esquinazi, P.;Heluani, S. P.;
10:447:1 Biphasic Pd-Au Alloy Catalyst for Low-Temperature CO Oxidation
DOI:10.1021/ja102617r JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:94 AU: Xu, Jing;White, Tim;Li, Ping;He, Chongheng;Yu, Jianguo;Yuan, Weikang;Han, Yi-Fan;
10:447:2 ZnO nanocontainers: structural study and controlled release
DOI:10.1039/c2jm31609a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:4 AU: Leidinger, Peter;Dingenouts, Nico;Popescu, Radian;Gerthsen, Dagmar;Feldmann, Claus;
10:447:3 Towards one key to one lock: catalyst modified indium oxide nanoparticle thin film sensor array for selective gas detection
DOI:10.1039/c2jm15179k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:12 AU: Yao, Kun;Caruntu, Daniela;Wozny, Sarah;Huang, Rong;Ikuhara, Yumi H.;Cao, Baobao;O'Connor, Charles J.;Zhou, Weilie;
10:447:4 Structure of hollow spheres analyzed by X-ray diffraction, transmission electron microscopy, and dynamic light scattering
DOI:10.1007/s11051-013-1648-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:4 AU: Popescu, R.;Leidinger, P.;Kind, C.;Feldmann, C.;Gerthsen, D.;
10:447:5 Nanoscale La(OH)(3) Hollow Spheres and Fine-Tuning of Its Outer Diameter and Cavity Size
DOI:10.1002/smll.201000575 JN:SMALL PY:2010
TC:22 AU: Leidinger, Peter;Popescu, Radian;Gerthsen, Dagmar;Feldmann, Claus;
10:447:6 Confined space synthesis of fully alloyed and sinter-resistant AuPd nanoparticles encapsulated in porous silica
DOI:10.1039/c3ta15194h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:2 AU: Samanta, Anupam;Rajesh, Thattarathody;Devi, R. Nandini;
10:447:7 Innovative electrodes for direct methanol fuel cells based on carbon nanofibers and bimetallic PtAu nanocatalysts
DOI:10.1016/j.ijhydene.2014.06.053 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:1 AU: Giorgi, L.;Salernitano, E.;Makris, Th. Dikonimos;Gagliardi, S.;Contini, V.;De Francesco, M.;
10:447:8 ARXPS and DFT studies of thermally induced Pb surface segregation on Au/Cu alloys
DOI:10.1016/j.jallcom.2013.10.119 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Voelker, Edgar;Williams, Federico J.;Jacob, Timo;Schiffrin, David J.;
10:448:1 Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies
DOI:10.1016/j.apsusc.2014.08.068 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Siddheswaran, R.;Savkova, Jarmila;Medlin, Rostislav;Ocenasek, Jan;Zivotsky, Ondrej;Novak, Petr;Sutta, Pavol;
10:448:2 Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation
DOI:10.1063/1.3385024 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Vinnichenko, M.;Gago, R.;Cornelius, S.;Shevchenko, N.;Rogozin, A.;Kolitsch, A.;Munnik, F.;Moeller, W.;
10:448:3 Effect of vacuum magnetic annealing on the structural and physical properties of the Ni and Al co-doped ZnO films
DOI:10.1016/j.tsf.2010.07.045 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Yu, Mingpeng;Qiu, Hong;Chen, Xiaobai;
10:448:4 Effect of oxygen on active Al concentration in ZnO: Al thin films made by PLD
DOI:10.1016/j.apsusc.2014.08.138 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Kodu, M.;Arroval, T.;Avarmaa, T.;Jaaniso, R.;Kink, I.;Leinberg, S.;Savi, K.;Timusk, M.;
10:448:5 Tweaking electrical and magnetic properties of Al-Ni co-doped ZnO nanopowders
DOI:10.1016/j.ceramint.2014.06.089 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Anita;Luthra, Vandna;
10:448:6 Deposition of Ni, Ag, and Pt-based Al-doped ZnO double films for the transparent conductive electrodes by RF magnetron sputtering
DOI:10.1016/j.apsusc.2010.06.007 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Yang, Weifeng;Wu, Zhengyun;Liu, Zhuguang;Kong, Lingmin;
10:448:7 Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN
DOI:10.1063/1.4869137 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Huang, Bohr-Ran;Liao, Chung-Chi;Ke, Wen-Cheng;Chang, Yuan-Ching;Huang, Hao-Ping;Chen, Nai-Chuan;
10:448:8 Effect of Al-doping on the structure and optical properties of electrospun zinc oxide nanofiber films
DOI:10.1016/j.jcis.2011.05.022 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:5 AU: Yun, Sining;Lim, Sangwoo;
10:448:9 Electrical, optical and structural properties of Al-doped ZnO thin films grown on GaAs(111)B substrates by pulsed laser deposition
DOI:10.1016/j.tsf.2013.07.052 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Weigand, Christian;Crisp, Ryan;Ladam, Cecile;Furtak, Tom;Collins, Reuben;Grepstad, Jostein;Weman, Helge;
10:448:10 Effect of Mn doping on the nanostructure and optical properties of ZnO films synthesized by magnetron sputtering
DOI:10.1016/j.apsusc.2009.10.049 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Wu, Z. F.;Wu, X. M.;Zhuge, L. J.;Hong, B.;Yang, X. M.;Yu, T.;He, J. J.;Chen, Q.;
10:448:11 Observation of disorder-driven carrier localization by Auger resonant Raman scattering in n-type doped ZnO
DOI:10.1103/PhysRevB.83.155210 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Sakamaki, M.;Kawai, N.;Miki, T.;Kaneko, T.;Konishi, T.;Fujikawa, T.;Amemiya, K.;Kitajima, Y.;Kato, Y.;Muro, T.;Yamauchi, H.;Sakai, M.;
10:448:12 Surface morphology and crystalline structure of sequentially sputtered ZnO nanocoatings
DOI:10.1016/j.apsusc.2014.05.121 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Novotny, I.;Flickyngerova, S.;Tvarozek, V.;Sutta, P.;Netrvalova, M.;Rossberg, D.;Schaaf, P.;
10:448:13 Influence of the nanoscale structural features on the properties and electronic structure of Al-doped ZnO thin films: An X-ray absorption study
DOI:10.1016/j.solmat.2011.04.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:11 AU: Jullien, M.;Horwat, D.;Manzeh, F.;Escobar Galindo, R.;Bauer, Ph.;Pierson, J. F.;Endrino, J. L.;
10:449:1 Analysis of the Urbach tails in absorption spectra of undoped ZnO thin films
DOI:10.1063/1.4801900 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Rai, R. C.;
10:449:2 The high temperature photoluminescence and optical absorption of undoped ZnO single crystals and thin films
DOI:10.1063/1.4901833 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Margueron, Samuel;Clarke, David R.;
10:449:3 Urbach tail studies by Iuminescence filtering in moderately doped bulk InP
DOI:10.1063/1.3510470 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Subashiev, Arsen V.;Semyonov, Oleg;Chen, Zhichao;Luryi, Serge;
10:449:4 On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation
DOI:10.1063/1.4721495 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Bhattacharya, Rupak;Pal, Bipul;Bansal, Bhavtosh;
10:449:5 Direct observation of Levy flights of holes in bulk n-doped InP
DOI:10.1103/PhysRevB.86.201201 JN:PHYSICAL REVIEW B PY:2012
TC:5 AU: Luryi, Serge;Semyonov, Oleg;Subashiev, Arsen;Chen, Zhichao;
10:449:6 Inelastic Multiple Scattering of Interacting Bosons in Weak Random Potentials
DOI:10.1103/PhysRevLett.109.030601 JN:PHYSICAL REVIEW LETTERS PY:2012
TC:4 AU: Geiger, Tobias;Wellens, Thomas;Buchleitner, Andreas;
10:449:7 Relationship between dielectric coefficient and Urbach tail width of hydrogenated amorphous germanium carbon alloy films
DOI:10.1063/1.4739788 JN:APPLIED PHYSICS LETTERS PY:2012
TC:0 AU: Hu, C. Q.;Meng, F. F.;Wen, M.;Gu, Z. Q.;Wang, J. Y.;Fan, X. F.;Zheng, W. T.;
10:449:8 Radiation efficiency of heavily doped bulk n-InP semiconductor
DOI:10.1063/1.3455874 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Semyonov, Oleg;Subashiev, Arsen;Chen, Zhichao;Luryi, Serge;
10:449:9 Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO
DOI:10.1063/1.3653273 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Dang, Giang T.;Kanbe, Hiroshi;Kawaharamura, Toshiyuki;Taniwaki, Masafumi;
10:449:10 Superfluid Motion of Light
DOI:10.1103/PhysRevLett.105.163904 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:8 AU: Leboeuf, Patricio;Moulieras, Simon;
10:449:11 Photoluminescence lineshape of ZnO
DOI:10.1063/1.4897383 JN:AIP ADVANCES PY:2014
TC:2 AU: Ullrich, Bruno;Singh, Akhilesh K.;Bhowmick, Mithun;Barik, Puspendu;Ariza-Flores, David;Xi, Haowen;Tomm, Jens W.;
10:449:12 Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions
DOI:10.1063/1.3598068 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Dang, Giang T.;Kawaharamura, Toshiyuki;Nitta, Noriko;Hirao, Takashi;Yoshiie, Toshimasa;Taniwaki, Masafumi;
10:449:13 Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition
DOI:10.1063/1.3699365 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Rai, R. C.;Guminiak, M.;Wilser, S.;Cai, B.;Nakarmi, M. L.;
10:449:14 Coherent Backscattering in Fock Space: A Signature of Quantum Many-Body Interference in Interacting Bosonic Systems
DOI:10.1103/PhysRevLett.112.140403 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:0 AU: Engl, Thomas;Dujardin, Julien;Arguelles, Arturo;Schlagheck, Peter;Richter, Klaus;Urbina, Juan Diego;
10:450:1 Effect of Cu ions on the morphology, structure and luminescence properties of ZnO nanorod arrays prepared by hydrothermal method
DOI:10.1016/j.apsusc.2012.04.009 JN:APPLIED SURFACE SCIENCE PY:2012
TC:14 AU: Xu, Jianping;Liu, Pei;Shi, Shaobo;Zhang, Xiaosong;Wang, Lishi;Ren, Zhirui;Ge, Lin;Li, Lan;
10:450:2 Synthesis, structural, optical and magnetic properties of Cu-doped ZnO nanorods prepared by a simple direct thermal decomposition route
DOI:10.1007/s00339-014-8475-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Noipa, Kiattisak;Rujirawat, Saroj;Yimnirun, Rattikorn;Promarak, Vinich;Maensiri, Santi;
10:450:3 Zinc oxide/carboxylic acid lamellar structures
DOI:10.1016/j.materresbull.2011.06.040 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Segovia, M.;Lemus, K.;Moreno, M.;Santa Ana, M. A.;Gonzalez, G.;Ballesteros, B.;Sotomayor, C.;Benavente, E.;
10:450:4 Control of the Morphology and Optical Properties of ZnO Nanostructures via Hot Mixing of Reverse Micelles
DOI:10.1021/la102197r JN:LANGMUIR PY:2010
TC:7 AU: Mao, Jing;Li, Xiao-Lei;Qin, Wen-Jing;Niu, Kai-Yang;Yang, Jing;Ling, Tao;Du, Xi-Wen;
10:450:5 Structural and magnetic properties of Co-Ga co-doped ZnO thin films fabricated by pulsed laser deposition
DOI:10.1016/j.tsf.2009.07.118 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Zhu, Liping;Ye, Zhigao;Wang, Xuetao;Ye, Zhizhen;Zhao, Binghui;
10:450:6 A Layered Titanium Phosphate Ti2O3(H2PO4)(2)center dot 2H(2)O with Rectangular Morphology: Synthesis, Structure, and Cysteamine Intercalation
DOI:10.1021/cm9034159 JN:CHEMISTRY OF MATERIALS PY:2010
TC:6 AU: Korosi, Laszlo;Papp, Szilvia;Dekany, Imre;
10:450:7 Synthesis, experimental and theoretical investigations of Zn1-xCuxO nanopowders
DOI:10.1016/j.jmmm.2012.08.008 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:4 AU: Ghajari, N.;Kompany, A.;Movlarooy, T.;Roozban, F.;Majidiyan, M.;
10:450:8 Silica-controlled structure and optical properties of zinc oxide sol-gel thin films
DOI:10.1557/jmr.2011.7 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:3 AU: Zhang, Yi-Dong;Wang, Li-Wei;Mi, Li-Wei;Yang, Feng-Ling;Zheng, Zhi;
10:450:9 Transport and magnetic properties of ZnCo2O4/Si heterostructures grown by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2014.10.103 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Chen, Z.;Wen, X. L.;Niu, L. W.;Duan, M.;Zhang, Y. J.;Dong, X. L.;Zhang, R. L.;Chen, C. L.;
10:450:10 Structural, optical and electrical properties of Ga-doped and (Ga, Co)-codoped ZnO films
DOI:10.1016/j.jcrysgro.2010.07.010 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:8 AU: Liu, Xue-Chao;Chen, Zhi-Zhan;Chen, Bo-Yuan;Shi, Er-Wei;Liao, Da-Qian;
10:450:11 Morphology investigation of hydrothermally prepared ZnO micro-crystals influenced by Cu2+ ions
DOI:10.1016/j.materresbull.2009.11.002 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:2 AU: Jin, Dalai;Yue, Linhai;Zheng, Yifan;
10:451:1 Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis
DOI:10.1039/c3tc31129e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:15 AU: Rashidi, Nazanin;Kuznetsov, Vladimir L.;Dilworth, Jonathan R.;Pepper, Michael;Dobson, Peter J.;Edwards, Peter P.;
10:451:2 Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles
DOI:10.1063/1.3360930 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:14 AU: Noriega, Rodrigo;Rivnay, Jonathan;Goris, Ludwig;Kaelblein, Daniel;Klauk, Hagen;Kern, Klaus;Thompson, Linda M.;Palke, Aaron C.;Stebbins, Jonathan F.;Jokisaari, Jacob R.;Kusinski, Greg;Salleo, Alberto;
10:451:3 Studies on temperature dependent semiconductor to metal transitions in ZnO thin films sparsely doped with Al
DOI:10.1063/1.4765733 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Das, Amit K.;Misra, P.;Ajimsha, R. S.;Bose, A.;Joshi, S. C.;Phase, D. M.;Kukreja, L. M.;
10:451:4 Aluminum-doped ZnO nanoparticles: gas-phase synthesis and dopant location
DOI:10.1007/s11051-014-2506-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:1 AU: Schilling, Carolin;Zaehres, Manfred;Mayer, Christian;Winterer, Markus;
10:451:5 Dopant-induced bandgap shift in Al-doped ZnO thin films prepared by spray pyrolysis
DOI:10.1063/1.4759208 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Lai, Henry Hung-Chun;Basheer, Tahseen;Kuznetsov, Vladimir L.;Egdell, Russell G.;Jacobs, Robert M. J.;Pepper, Michael;Edwards, Peter P.;
10:451:6 Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si0.02Zn0.98O thin films grown by pulsed laser deposition
DOI:10.1063/1.4878698 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Das, Amit K.;Ajimsha, R. S.;Kukreja, L. M.;
10:451:7 Quantum corrections to temperature dependent electrical conductivity of ZnO thin films degenerately doped with Si
DOI:10.1063/1.4863743 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Das, Amit K.;Ajimsha, R. S.;Kukreja, L. M.;
10:451:8 Structural, electrical and photoluminescence properties of ZnO:Al films grown on MgO(001) by direct current magnetron sputtering with the oblique target
DOI:10.1016/j.matchemphys.2010.12.026 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:2 AU: Li, Hui;Qiu, Hong;Yu, Mingpeng;Chen, Xiaobai;
10:451:9 Combinatorial Nanopowder Synthesis Along the ZnO-Al2O3 Tie Line Using Liquid-Feed Flame Spray Pyrolysis
DOI:10.1111/j.1551-2916.2011.04585.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:2 AU: Kim, Min;Lai, Samson;Laine, Richard M.;
10:452:1 alpha-Fe2O3/(PVA + PEG) Nanocomposite films; synthesis, optical, and dielectric characterizations
DOI:10.1007/s10853-014-8245-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: El Sayed, A. M.;Morsi, W. M.;
10:452:2 Preparation and characterization of dye sensitized solar cell based on nanostructured Fe2O3
DOI:10.1016/j.matlet.2013.04.053 JN:MATERIALS LETTERS PY:2013
TC:13 AU: Cavas, M.;Gupta, R. K.;Al-Ghamdi, Ahmed A.;Gafer, Zarah H.;El-Tantawy, Farid;Yakuphanoglu, F.;
10:452:3 Green synthesis of mesoporous hematite (alpha-Fe2O3) nanoparticles and their photocatalytic activity
DOI:10.1016/j.apt.2012.04.005 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:21 AU: Ahmmad, Bashir;Leonard, Kwati;Islam, Md Shariful;Kurawaki, Junichi;Muruganandham, Manickavachagam;Ohkubo, Takahiro;Kuroda, Yasushige;
10:452:4 Synthesis and optical properties of CuO nanostructures in imidazolium-based ionic liquids
DOI:10.1016/j.matlet.2013.11.090 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Sabbaghan, Maryam;Behbahani, Behnoosh Mirzaei;
10:452:5 TiO2/modified natural clay semiconductor as a potential electrode for natural dye-sensitized solar cell
DOI:10.1016/j.ceramint.2010.09.001 JN:CERAMICS INTERNATIONAL PY:2011
TC:8 AU: Saelim, Ni-on;Magaraphan, Rathanawan;Sreethawong, Thammanoon;
10:452:6 Sol-gel deposition of fluorine-doped tin oxide glasses for dye sensitized solar cells
DOI:10.1016/j.ceramint.2013.06.017 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Bu, Ian Y. Y.;
10:452:7 One-step and large scale synthesis of non-metal doped TiO2 submicrospheres and their photocatalytic activity
DOI:10.1016/j.apt.2009.12.009 JN:ADVANCED POWDER TECHNOLOGY PY:2010
TC:9 AU: Ahmmad, Bashir;Kusumoto, Yoshihumi;Islam, Md Shariful;
10:452:8 Oriented growth of alpha-Fe2O3 nanocrystals with different morphology and their optical behavior
DOI:10.1016/j.jcrysgro.2013.07.013 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:3 AU: Chakrabarty, S.;Chatterjee, K.;
10:452:9 Use of l-tyrosine amino acid as biomodifier of Cloisite Na+ for preparation of novel poly(vinyl alcohol)/organoclay bionanocomposites film
DOI:10.1007/s10853-011-5336-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:6 AU: Mallakpour, Shadpour;Madani, Maryam;
10:452:10 Fabrication, nanostructure evaluation, 3D electrical transport and electrochemical capacitance of PEDOT-Ti(IV)-doped iron(III) oxide nanocomposite
DOI:10.1007/s10853-013-7760-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:3 AU: Nandi, Debabrata;Ghosh, Arup K.;De, Amitabha;Sen, Pintu;Ghosh, Uday Chand;
10:452:11 Nanoporous hematite nanoparticles: Synthesis and applications for benzylation of benzene and aromatic compounds
DOI:10.1016/j.jallcom.2013.08.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Nguyen Duc Cuong;Nguyen Duc Hoa;Tran Thai Hoa;Dinh Quang Khieu;Duong Tuan Quang;Vu Van Quang;Nguyen Van Hieu;
10:453:1 The Lattice Compatibility Theory (LCT): An attempt to explain Urbach tailing patterns in copper-doped bismuth sillenites (BSO) and germanates (BGO)
DOI:10.1016/j.jallcom.2012.08.086 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:13 AU: Petkova, P.;Boubaker, K.;
10:453:2 Synthesis and Properties of Homogeneous Nb-Doped Bismuth Oxide
DOI:10.1111/j.1551-2916.2010.03836.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:10 AU: Weng, Ching-Hung;Wei, Wen-Cheng J.;
10:453:3 Mass production of Al2O3 and ZrO2 nanoparticles by hot-air spray pyrolysis
DOI:10.1016/j.powtec.2012.08.028 JN:POWDER TECHNOLOGY PY:2013
TC:11 AU: Manivasakan, Palanisamy;Karthik, Arumugam;Rajendran, Venkatachalam;
10:453:4 Assessment of structurally stable cubic Bi12TiO20 as intermediate temperature solid oxide fuels electrolyte
DOI:10.1016/j.jeurceramsoc.2011.04.039 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:5 AU: Kuo, Yu-Lin;Liu, Li-Der;Lin, Sung-En;Chou, Chia-Hao;Wei, Weng-Cheng J.;
10:453:5 Characterization of electrolyte films deposited by using RF magnetron sputtering a 20 mol% gadolinia-doped ceria target
DOI:10.1016/j.tsf.2010.04.082 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Lin, Sung-En;Kuo, Yu-Lin;Chou, Chia-Hao;Wei, Wen-Cheng J.;
10:453:6 Synthesis of Monoclinic and Cubic ZrO2 Nanoparticles from Zircon
DOI:10.1111/j.1551-2916.2010.04277.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:24 AU: Manivasakan, Palanisamy;Rajendran, Venkatachalam;Rauta, Prema Ranjan;Sahu, Bhakta Bandhu;Panda, Bharati Krushna;
10:453:7 Effect of mineral acids on the production of alumina nanopowder from raw bauxite
DOI:10.1016/j.powtec.2011.03.037 JN:POWDER TECHNOLOGY PY:2011
TC:10 AU: Manivasakan, Palanisamy;Rajendran, Venkatachalam;Rauta, Prema Ranjan;Sahu, Bhakta Bandhu;Panda, Bharati Krushna;
10:453:8 Processing of nano to microparticulates with controlled morphology by a novel spray pyrolysis technique: A mathematical approach to understand the process mechanism
DOI:10.1016/j.powtec.2013.02.040 JN:POWDER TECHNOLOGY PY:2013
TC:2 AU: Mukhopadhyay, Jayanta;Maiti, Himadri Sekhar;Basu, Rajendra Nath;
10:453:9 One-step fabrication of tetragonal ZrO2 particles by atmospheric pressure plasma jet
DOI:10.1016/j.powtec.2014.07.004 JN:POWDER TECHNOLOGY PY:2014
TC:0 AU: Su, Yu-Ming;Kuo, Yu-Lin;Lin, Chun-Ming;Lee, Sun-Fen;
10:453:10 Growth of 20 mol% Gd-doped ceria thin films by RF reactive sputtering: The O-2/Ar flow ratio effect
DOI:10.1016/j.jeurceramsoc.2011.05.002 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:4 AU: Kuo, Yu-Lin;Chen, Yong-Siou;Lee, Chiapyng;
10:453:11 Synthesis and study on phase diagram of 1-10 mol% SnO2-doped Bi2O3
DOI:10.1016/j.jeurceramsoc.2011.05.012 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:5 AU: Kuo, Tzu-Chi;Kuo, Yu-Lin;Wei, Wen-Cheng J.;
10:453:12 A facile method for the deposition of Gd2O3-doped ceria films by atmospheric pressure plasma jet
DOI:10.1016/j.tsf.2014.02.105 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Kuo, Yu-Lin;Su, Yu-Ming;Chang, Jia-Yu;
10:453:13 Effect of V2O5 doping on microstructure and electrical properties of Bi2O3-TiO2 solid oxide electrolyte system
DOI:10.1016/j.ceramint.2012.08.015 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Lin, Chun-Ming;Kuo, Yu-Lin;Chou, Chia-Hao;
10:453:14 Long-term degradation of Ta2O5-doped Bi2O3 systems
DOI:10.1016/j.jeurceramsoc.2011.04.015 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:3 AU: Lin, S. E.;Wei, W. C. J.;
10:454:1 Anisotropic paramagnetism of Co-doped ZnO epitaxial films
DOI:10.1103/PhysRevB.81.054420 JN:PHYSICAL REVIEW B PY:2010
TC:27 AU: Ney, A.;Kammermeier, T.;Ollefs, K.;Ye, S.;Ney, V.;Kaspar, T. C.;Chambers, S. A.;Wilhelm, F.;Rogalev, A.;
10:454:2 Quantification of the magnetic exchange via element-selective high-field magnetometry: Co-doped ZnO epitaxial films
DOI:10.1103/PhysRevB.85.245202 JN:PHYSICAL REVIEW B PY:2012
TC:8 AU: Ney, A.;Ney, V.;Wilhelm, F.;Rogalev, A.;Usadel, K.;
10:454:3 p-type doping and codoping of ZnO based on nitrogen is ineffective: An ab initio clue
DOI:10.1063/1.3473762 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Cui, Ying;Bruneval, Fabien;
10:454:4 Role of preparation and implantation-related defects for the magnetic properties of Zn0.9Co0.1O epitaxial films
DOI:10.1063/1.4891454 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Ney, V.;Lenz, K.;Ollefs, K.;Wilhelm, F.;Rogalev, A.;Ney, A.;
10:454:5 Structure, valence, and magnetism of Co-doped ZnO at the coalescence limit (invited)
DOI:10.1063/1.4870916 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Ney, A.;Ney, V.;Kieschnick, M.;Wilhelm, F.;Ollefs, K.;Rogalev, A.;
10:454:6 Incorporation of nitrogen in Co:ZnO studied by x-ray absorption spectroscopy and x-ray linear dichroism
DOI:10.1103/PhysRevB.87.125206 JN:PHYSICAL REVIEW B PY:2013
TC:5 AU: Schauries, D.;Ney, V.;Nayak, S. K.;Entel, P.;Guda, A. A.;Soldatov, A. V.;Wilhelm, F.;Rogalev, A.;Kummer, K.;Yakhou, F.;Ney, A.;
10:454:7 Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy
DOI:10.1063/1.4851015 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Kovacs, A.;Ney, A.;Duchamp, M.;Ney, V.;Boothroyd, C. B.;Galindo, P. L.;Kaspar, T. C.;Chambers, S. A.;Dunin-Borkowski, R. E.;
10:454:8 Structure of epitaxial (Fe,N) codoped rutile TiO2 thin films by x-ray absorption
DOI:10.1103/PhysRevB.86.035322 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Kaspar, T. C.;Ney, A.;Mangham, A. N.;Heald, S. M.;Joly, Y.;Ney, V.;Wilhelm, F.;Rogalev, A.;Yakou, F.;Chambers, S. A.;
10:455:1 The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer
DOI:10.1063/1.3486058 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Luka, G.;Stakhira, P.;Cherpak, V.;Volynyuk, D.;Hotra, Z.;Godlewski, M.;Guziewicz, E.;Witkowski, B.;Paszkowicz, W.;Kostruba, A.;
10:455:2 Pulsed laser deposition of Li-N dual acceptor in p-ZnO:(Li, N) thin film and the p-ZnO:(Li, N)/n-ZnO homojunctions on Si(100)
DOI:10.1063/1.4868515 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Yang, Jing-Jing;Fang, Qing-Qing;Wang, Wei-Na;Wang, Dan-Dan;Wang, Can;
10:455:3 Dominant shallow donors in zinc oxide layers obtained by low-temperature atomic layer deposition: Electrical and optical investigations
DOI:10.1016/j.actamat.2013.11.054 JN:ACTA MATERIALIA PY:2014
TC:3 AU: Krajewski, Tomasz A.;Dybko, Krzysztof;Luka, Grzegorz;Guziewicz, Elzbieta;Nowakowski, Piotr;Witkowski, Bartlomiej S.;Jakiela, Rafal;Wachnicki, Lukasz;Kaminska, Agata;Suchocki, Andrzej;Godlewski, Marek;
10:455:4 Annealing effect on conductivity behavior of Li-doped ZnO thin film and its application as ZnO-based homojunction device
DOI:10.1016/j.jcrysgro.2011.01.058 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Tsai, Shu-Yi;Hon, Min-Hsiung;Lu, Yang-Ming;
10:455:5 Thin film transistors with a ZnO channel and gate dielectric layers of HfO2 by atomic layer deposition
DOI:10.1116/1.3501338 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:8 AU: Grundbacher, Ronald;Chikkadi, Kiran;Hierold, Christofer;
10:455:6 Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering
DOI:10.1016/j.tsf.2009.09.008 JN:THIN SOLID FILMS PY:2010
TC:11 AU: Zhao, T. T.;Yang, T.;Yao, B.;Cong, C. X.;Sui, Y. R.;Xing, G. Z.;Sun, Y.;Su, S. C.;Zhu, H.;Shen, D. Z.;
10:455:7 Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
DOI:10.1063/1.4805778 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Li, Jichao;Yao, Bin;Li, Yongfeng;Ding, Zhanhui;Xu, Ying;Zhang, Ligong;Zhao, Haifeng;Shen, Dezhen;
10:455:8 The origin of p-type conduction in Li-N codoped ZnO: An ab initio calculation study
DOI:10.1063/1.3606410 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Tang, Xin;Cheng, Xiangfeng;Wagner, Dustin;Lue, Haifeng;Zhang, Qingyu;
10:455:9 Trap levels in the atomic layer deposition-ZnO/GaN heterojunction-Thermal admittance spectroscopy studies
DOI:10.1063/1.4805655 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Krajewski, Tomasz A.;Stallinga, Peter;Zielony, Eunika;Goscinski, Krzysztof;Kruszewski, Piotr;Wachnicki, Lukasz;Aschenbrenner, Timo;Hommel, Detlef;Guziewicz, Elzbieta;Godlewski, Marek;
10:455:10 Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
DOI:10.1007/s11664-009-1017-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:3 AU: Lajn, A.;von Wenckstern, H.;Benndorf, G.;Dietrich, C. P.;Brandt, M.;Biehne, G.;Hochmuth, H.;Lorenz, M.;Grundmann, M.;
10:455:11 Gd and Sm on clean semiconductor surfaces-Resonant photoemission studies
DOI:10.1016/j.apsusc.2013.05.128 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Guziewicz, E.;Orlowski, B. A.;Kowalski, B. J.;Kowalik, I. A.;Reszka, A.;Wachnicki, L.;Gieraltowska, S.;Godlewski, M.;Johnson, R. L.;
10:456:1 Role of Ti 3d Carriers in Mediating the Ferromagnetism of Co:TiO2 Anatase Thin Films
DOI:10.1103/PhysRevLett.106.047602 JN:PHYSICAL REVIEW LETTERS PY:2011
TC:18 AU: Ohtsuki, T.;Chainani, A.;Eguchi, R.;Matsunami, M.;Takata, Y.;Taguchi, M.;Nishino, Y.;Tamasaku, K.;Yabashi, M.;Ishikawa, T.;Oura, M.;Senba, Y.;Ohashi, H.;Shin, S.;
10:456:2 Role of Co doping on structural, optical and magnetic properties of TiO2
DOI:10.1016/j.jallcom.2012.10.076 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Kaushik, A.;Dalela, B.;Kumar, Sudhish;Alvi, P. A.;Dalela, S.;
10:456:3 Ferromagnetism of cobalt-doped anatase TiO2 studied by bulk- and surface-sensitive soft x-ray magnetic circular dichroism
DOI:10.1063/1.4729123 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Singh, V. R.;Ishigami, K.;Verma, V. K.;Shibata, G.;Yamazaki, Y.;Kataoka, T.;Fujimori, A.;Chang, F. -H.;Huang, D. -J.;Lin, H. -J.;Chen, C. T.;Yamada, Y.;Fukumura, T.;Kawasaki, M.;
10:456:4 Anomalous Hall effect in two-phase semiconductor structures: The role of ferromagnetic inclusions
DOI:10.1103/PhysRevB.90.024415 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Kudrin, A. V.;Shvetsov, A. V.;Danilov, Yu. A.;Timopheev, A. A.;Pavlov, D. A.;Bobrov, A. I.;Malekhonova, N. V.;Sobolev, N. A.;
10:456:5 The role of anomalous Hall effect in diluted magnetic semiconductors and oxides
DOI:10.1063/1.3431294 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Hsu, H. S.;Lin, C. P.;Sun, S. J.;Chou, H.;
10:456:6 Control of ferromagnetism at room temperature in (Ti,Co)O2-delta via chemical doping of electron carriers
DOI:10.1063/1.3669505 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Yamada, Y.;Fukumura, T.;Ueno, K.;Kawasaki, M.;
10:456:7 Atomic layer deposition of ferromagnetic cobalt doped titanium oxide thin films
DOI:10.1016/j.tsf.2011.01.191 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Pore, Viljami;Dimri, Mukesh;Khanduri, Himani;Stern, Raivo;Lu, Jun;Hultman, Lars;Kukli, Kaupo;Ritala, Mikko;Leskela, Markku;
10:456:8 The Kondo effect and carrier transport in amorphous Cr-doped In2O3 thin films
DOI:10.1063/1.4773317 JN:AIP ADVANCES PY:2012
TC:1 AU: Lin, C. P.;Hsu, C. Y.;Sun, S. J.;Chou, H.;
10:456:9 X-ray absorption and magnetic circular dichroism characterization of Fe-doped TiO2-delta thin films
DOI:10.1016/j.jmmm.2012.12.046 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:3 AU: Sakai, Enju;Amemiya, Kenta;Chikamatsu, Akira;Hirose, Yasushi;Shimada, Toshihiro;Hasegawa, Tetsuya;
10:457:1 Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature
DOI:10.1016/j.matlet.2012.10.083 JN:MATERIALS LETTERS PY:2013
TC:48 AU: Zang, Zhigang;Nakamura, Atsushi;Temmyo, Jiro;
10:457:2 Optical properties correlated with morphology and structure of TEAH modified ZnO nanoparticles via precipitation method
DOI:10.1016/j.jallcom.2013.04.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Popa, M.;Mesaros, A.;Mereu, R. A.;Suciu, R.;Vasile, B. S.;Gabor, M. S.;Ciontea, L.;Petrisor, T.;
10:457:3 Facile synthesis of one-dimensional Fe-doped ZnO nanostructures from a single-source inorganic precursor
DOI:10.1016/j.matlet.2014.07.111 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Yue, Shuang;Wang, Lianying;Zhang, Dingheng;Yang, Shuangxia;Guo, Xiaodi;Lu, Yanluo;He, Jing;
10:457:4 The different electron transport of two nanotubes incorporated in working electrode of dye-sensitized solar cells
DOI:10.1016/j.jallcom.2013.06.041 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: Zhang, Xiaobo;Tian, Hanmin;Wang, Xiangyan;Xue, Guogang;Tian, Zhipeng;Zhang, Jiyuan;Yuan, Shikui;Yu, Tao;Zou, Zhigang;
10:457:5 Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper
DOI:10.1016/j.matlet.2011.12.044 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Rajani, K. V.;Daniels, S.;McGlynn, E.;Gandhirarnan, R. P.;Groarke, R.;McNally, P. J.;
10:457:6 High-excitation effect on photoluminescence of sol-gel ZnO nanopowder
DOI:10.1063/1.3327338 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Chia, C. H.;Lai, Y. J.;Han, T. C.;Chiou, J. W.;Hu, Y. M.;Chou, W. C.;
10:457:7 Size dependence of exciton-phonon coupling in sol-gel ZnMgO powders
DOI:10.1063/1.3563574 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Chia, C. H.;Chen, J. N.;Han, T. C.;Chiou, J. W.;Lin, Y. C.;Hsu, W. L.;Chou, W. C.;
10:457:8 High-density excitation effect on photoluminescence in ZnO nanoparticles
DOI:10.1063/1.3425783 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: Suzuki, Keigo;Inoguchi, Masashi;Fujita, Koji;Murai, Shunsuke;Tanaka, Katsuhisa;Tanaka, Nobuhiko;Ando, Akira;Takagi, Hiroshi;
10:457:9 Formation of cuprous oxide films via oxygen plasma
DOI:10.1016/j.tsf.2010.03.102 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Ooi, Chinchun;Goh, Gregory K. L.;
10:458:1 Schottky contacts on differently grown n-type ZnO single crystals
DOI:10.1063/1.3558728 JN:APPLIED PHYSICS LETTERS PY:2011
TC:20 AU: Kolkovsky, Vl.;Scheffler, L.;Hieckmann, E.;Lavrov, E. V.;Weber, J.;
10:458:2 Study of growing zinc oxide on polycrystalline silicon/glass substrate prepared by aluminum-induced crystallization of amorphous silicon
DOI:10.1016/j.mssp.2014.09.018 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Hwang, J. D.;Yan, W. J.;Chen, J. H.;
10:458:3 Hydrothermal growth of ZnO nanorods on a-plane GaN/sapphire template
DOI:10.1016/j.jcrysgro.2010.06.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Sahoo, Trilochan;Choi, Jung-Hun;Yoo, Ju-Wan;Yu, Yeon-Tae;Jeon, Seong-Ran;Baek, Jong-Hyeob;Yoon, Hyung-Do;Hwang, Sung-Min;Lee, In-Hwan;
10:458:4 Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer
DOI:10.1088/0957-4484/24/11/115709 JN:NANOTECHNOLOGY PY:2013
TC:9 AU: Hwang, J. D.;Lin, Y. L.;Kung, C. Y.;
10:458:5 Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique
DOI:10.1063/1.4819731 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kolkovsky, Vl.;Zytkiewicz, Z. R.;Sobanska, M.;Klosek, K.;
10:458:6 High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes
DOI:10.1063/1.4901443 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chun, Young Tea;Neeves, Matthew;Smithwick, Quinn;Placido, Frank;Chu, Daping;
10:458:7 Carrier transport mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres annealing hydrothermal seed-layer
DOI:10.1016/j.tsf.2012.03.048 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Hwang, J. D.;Chen, Y. H.;
10:458:8 Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes
DOI:10.1063/1.4761958 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Yatskiv, R.;Grym, J.;
10:458:9 Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method
DOI:10.1016/j.tsf.2012.04.015 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Hwang, J. D.;Chen, Y. H.;
10:458:10 Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique
DOI:10.1063/1.4897538 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Stuebner, R.;Kolkovsky, V. I.;Leibiger, Gunnar;Habel, Frank;Weber, J.;
10:458:11 Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method
DOI:10.1016/j.jcrysgro.2009.11.045 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Shi, Yuanyuan;Yang, Zhan;Cao, Hongtao;Liu, Zhimin;
10:459:1 Annealing impact on the structural and photoluminescence properties of ZnO thin films on Ag substrates
DOI:10.1016/j.jallcom.2013.09.009 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:9 AU: Xu, Linhua;Zheng, Gaige;Lai, Min;Pei, Shixin;
10:459:2 Growth and green defect emission of ZnPbO nanorods by a catalyst-assisted thermal evaporation-oxidation method
DOI:10.1016/j.jcrysgro.2015.01.003 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Tsega, Moges;Kuo, Dong-Hau;Dejene, F. B.;
10:459:3 Surface-plasmon mediated photoluminescence from Ag-coated ZnO/MgO core-shell nanowires
DOI:10.1016/j.tsf.2013.11.131 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Mayo, Daniel C.;Marvinney, Claire E.;Bililign, Ephraim S.;McBride, James R.;Mu, Richard R.;Haglund, Richard F., Jr.;
10:459:4 Enhancement of ZnO photoluminescence by laser nanostructuring of Ag underlayer
DOI:10.1016/j.apsusc.2012.01.052 JN:APPLIED SURFACE SCIENCE PY:2012
TC:12 AU: Koleva, M. E.;Dikovska, A. Og.;Nedyalkov, N. N.;Atanasov, P. A.;Bliznakova, I. A.;
10:459:5 Highly efficient orange emission in ZnO:Se nanorods
DOI:10.1063/1.3524538 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Sun, Luwei;He, Haiping;Liu, Chao;Ye, Zhizhen;
10:459:6 Coupling of photoluminescent centers in ZnO to localized and propagating surface plasmons
DOI:10.1016/j.tsf.2009.12.049 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Haglund, Richard F., Jr.;Lawrie, Benjamin J.;Mu, Richard;
10:459:7 Near field properties of nanoparticle arrays fabricated by laser annealing of thin Au and Ag films
DOI:10.1016/j.apsusc.2010.08.016 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Imamova, S.;Nedyalkov, N.;Dikovska, A.;Atanasov, P.;Sawczak, M.;Jendrzejewski, R.;Sliwinski, G.;Obara, M.;
10:459:8 Structural and Optical Characterization of ZnO/MgxZn1-xO Multiple Quantum Wells Based Random Laser Diodes
DOI:10.1021/am302378v JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:7 AU: Jiang, Qike;Zheng, He;Wang, Jianbo;Long, Hao;Fang, Guojia;
10:460:1 Physical investigations on (In2S3)(x)(In2O3)(y) and In2S3_Se-x(x) thin films processed through In2S3 annealing in air and selenide atmosphere
DOI:10.1016/j.mssp.2014.03.043 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Gantassi, A.;Essaidi, H.;Boubaker, K.;Bernede, J. C.;Colantoni, A.;Amlouk, M.;Manoubi, T.;
10:460:2 Hydrothermal synthesis and photoelectrochemical properties of In2S3 thin films with a wedgelike structure
DOI:10.1016/j.apsusc.2012.05.141 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Zhang, Lina;Zhang, Wei;Yang, Haibin;Fu, Wuyou;Li, Minghui;Zhao, Hui;Ma, Jinwen;
10:460:3 Flowerlike cubic beta-In2S3 microspheres: Synthesis and characterization
DOI:10.1016/j.jallcom.2009.12.089 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Liu, Lijun;Xiang, Weidong;Zhong, Jiasong;Yang, Xinyu;Liang, Xiaojuan;Liu, Haitao;Cai, Wen;
10:460:4 Synthesis, optical properties and growth process of In2S3 nanoparticles
DOI:10.1016/j.jcis.2010.03.053 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:16 AU: Ning, Jiajia;Men, Kangkang;Xiao, Guanjun;Zhao, Liyan;Wang, Li;Liu, Bingbing;Zou, Bo;
10:460:5 Simple Synthesis of Flower-Like In2S3 Structures and Their Use as Templates to Prepare CuS Particles
DOI:10.1155/2011/280216 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:5 AU: Sheng, Xia;Wang, Lei;Chen, Guanbi;Yang, Deren;
10:460:6 CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films
DOI:10.1016/j.apsusc.2010.09.071 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Pena, Y.;Lugo, S.;Calixto-Rodriguez, M.;Vazquez, A.;Gomez, I.;Elizondo, P.;
10:460:7 Hybrid complementary metal-oxide-semiconductor inverters based on single nanowires
DOI:10.1039/c0jm03821k JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:2 AU: Dai, Yu;Wu, Peicai;Dai, Lun;Fang, Xiaolong;Qin, Guogang;
10:460:8 Preparation and characterization of Cd(S,Se) films via the selenium-vapor-assisted annealing process
DOI:10.1016/j.jallcom.2012.07.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Cheng, Hao-Yu;Ma, Jeng-Shin;Lu, Chung-Hsin;
10:460:9 Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In2S3 Films for Solar Applications Using the Taguchi Method
DOI:10.1155/2014/302159 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Mughal, Maqsood Ali;Newell, M. Jason;Vangilder, Joshua;Thapa, Shyam;Wood, Kayla;Engelken, Robert;Carroll, B. Ross;Johnson, J. Bruce;
10:460:10 Very narrow In2S3 nanorods and nanowires from a single source precursor
DOI:10.1016/j.matlet.2013.02.061 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Abdelhady, Ahmed Lutfi;Ramasamy, Karthik;Malik, Mohammad A.;O'Brien, Paul;
10:461:1 Structural and optical analysis of ZnBeMgO powder and thin films
DOI:10.1016/j.jallcom.2010.09.193 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:13 AU: Panwar, Neeraj;Liriano, J.;Katiyar, Ram S.;
10:461:2 MgZnO/MgO strained multiple-quantum-well nanocolumnar films: Stress-induced structural transition and deep ultraviolet emission
DOI:10.1016/j.jallcom.2011.10.056 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Wang, L.;Xu, H. Y.;Zhang, C.;Li, X. H.;Liu, Y. C.;Zhang, X. T.;Tao, Y.;Huang, Y.;Chen, D. L.;
10:461:3 Effects of the oxygen pressure on the structural and optical properties of ZnBeMgO films prepared by pulsed laser deposition
DOI:10.1016/j.jcrysgro.2009.12.068 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:13 AU: Yang, C.;Li, X. M.;Gao, X. D.;Cao, X.;Yang, R.;Li, Y. Z.;
10:461:4 Anisotropic strained cubic MgZnO/MgO multiple-quantum-well nanorods: Growths and optical properties
DOI:10.1063/1.4788685 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Wang, Lei;Ma, Jiangang;Xu, Haiyang;Zhang, Cen;Li, Xinghua;Liu, Yichun;
10:461:5 Effects of Ga concentration, process conditions, and substrate materials on properties of ZnMgBeGaO ultraviolet-range transparent conducting films
DOI:10.1016/j.tsf.2014.11.006 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Cuong, Hoang Ba;Lee, Che-Sin;Lee, Byung-Teak;
10:461:6 Influence of sputtering pressure on band gap of Zn1-xMgxO thin films prepared by radio frequency magnetron sputtering
DOI:10.1116/1.3622316 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:1 AU: Wang, Dapeng;Narusawa, Tadashi;Kawaharamura, Toshiyuki;Furuta, Mamoru;Li, Chaoyang;
10:461:7 Exciton localization in inhomogeneously broadened ZnO/MgxZn1-xO quantum wells
DOI:10.1063/1.3452379 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Ashrafi, Almamun;
10:461:8 Temperature dependence of Zn1-xMgxO films grown on c-plane sapphire by metal organic vapor phase epitaxy
DOI:10.1016/j.jcrysgro.2010.01.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Thiandoume, C.;Lusson, A.;Galtier, P.;Sallet, V.;
10:461:9 Effects of growth variables on the properties of deep-UV ZnMgAlO thin films lattice matched to ZnO
DOI:10.1016/j.jcrysgro.2013.07.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:0 AU: Park, Jang-Ho;Yoon, Nae-Sang;Lee, Jong-Sook;Lee, Byung-Teak;
10:461:10 Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering
DOI:10.1116/1.3271250 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:3 AU: Li, Chaoyang;Matsuda, Tokiyoshi;Kawaharamura, Toshiyuki;Furuta, Hiroshi;Furuta, Mamoru;Hiramatsu, Takahiro;Hirao, Takashi;Nakanishi, Yoichiro;Ichinomiya, Keiji;
10:462:1 Effect of substrate temperature on indium tin oxide (ITO) thin films deposited by jet nebulizer spray pyrolysis and solar cell application
DOI:10.1016/j.mssp.2014.07.036 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Marikkannu, S.;Kashif, M.;Sethupathy, N.;Vidhya, V. S.;Piraman, Shakkthivel;Ayeshamariam, A.;Bououdina, M.;Ahmed, Naser M.;Jayachandran, M.;
10:462:2 Optical, electrical and sensing properties of In2O3 nanoparticles
DOI:10.1016/j.mssp.2012.12.009 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:14 AU: Ayeshamariam, A.;Bououdina, M.;Sanjeeviraja, C.;
10:462:3 Abrasion resistance of biaxially oriented polypropylene films coated with nanocomposite hard coatings
DOI:10.1016/j.apsusc.2013.08.112 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Wang, Jing;Zhu, Yaofeng;Fu, Yaqin;
10:462:4 Diluted magnetic semiconductors based on Mn-doped In2O3 nanoparticles
DOI:10.1016/j.jallcom.2014.01.085 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Vazquez-Olmos, America R.;Gomez-Peralta, Juan I.;Sato-Berru, Roberto Y.;Fernandez-Osorio, Ana L.;
10:462:5 Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition
DOI:10.1016/j.tsf.2011.04.191 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Gaskell, Jeffrey M.;Sheel, David W.;
10:462:6 Effects of annealing and plasma treatment on the electrical and optical properties of spin-coated ITZO films
DOI:10.1016/j.jallcom.2013.09.008 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Lee, Dong-min;Kim, Jae-Kwan;Hao, Jinchen;Kim, Han-Ki;Yoon, Jae-Sik;Lee, Ji-Myon;
10:462:7 Modeling of an inductively-coupled Cl-2/Ar plasma using neural network
DOI:10.1016/j.tsf.2012.03.076 JN:THIN SOLID FILMS PY:2012
TC:0 AU: Kim, Moonkeun;Jang, Hanbyeol;Lee, Yong-Hwa;Kwon, Kwang-Ho;Park, Kang-Bak;
10:462:8 Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method
DOI:10.1016/j.apsusc.2011.05.065 JN:APPLIED SURFACE SCIENCE PY:2011
TC:14 AU: Venkatachalam, S.;Nanjo, H.;Kawasaki, K.;Wakui, Y.;Hayashi, H.;Ebina, T.;
10:462:9 Morphological, structural, and gas-sensing characterization of tin-doped indium oxide nanoparticles
DOI:10.1016/j.ceramint.2013.07.012 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Ayeshamariam, A.;Kashif, M.;Bououdina, M.;Hashim, U.;Jayachandran, M.;Ali, M. E.;
10:462:10 Band gap narrowing in zinc oxide-based semiconductor thin films
DOI:10.1063/1.4870709 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Kumar, Jitendra;Srivastava, Amit Kumar;
10:462:11 Etch mechanism of In2O3 and SnO2 thin films in HBr-based inductively coupled plasmas
DOI:10.1116/1.3294712 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:5 AU: Kwon, Kwang-Ho;Efremov, Alexander;Kim, Moonkeun;Min, Nam Ki;Jeong, Jaehwa;Hong, MunPyo;Kim, Kwangsoo;
10:462:12 Contribution to carrier densities of the oxygen vacancy in a low-resistivity tin-doped indium oxide film by the hot-cathode plasma sputtering method
DOI:10.1016/j.matlet.2009.12.022 JN:MATERIALS LETTERS PY:2010
TC:2 AU: Kono, Akihiko;Nagai, Tatsuzo;Shoji, Fumiya;
10:462:13 Impact of radio frequency source power-induced ion energy on a refractive index of SiN film deposited by a pulsed-PECVD at room temperature
DOI:10.1016/j.tsf.2010.04.007 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Kim, Suyeon;Kim, Byungwhan;
10:462:14 HfO2 etching mechanism in inductively-coupled Cl-2/Ar plasma
DOI:10.1016/j.tsf.2011.04.059 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Kim, Moonkeun;Efremov, Alexander;Lee, Hyun Woo;Park, Hyung-Ho;Hong, MunPyo;Min, Nam Ki;Kwon, Kwang-Ho;
10:463:1 X-ray magnetic dichroism in the (Zn, Co)O diluted magnetic semiconductors from first principle calculations
DOI:10.1063/1.3699276 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Antonov, V. N.;Bekenov, L. V.;Jepsen, O.;Mazur, D. V.;Germash, L. P.;
10:463:2 X-ray magnetic dichroism in III-V diluted magnetic semiconductors: First-principles calculations
DOI:10.1103/PhysRevB.81.075209 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Antonov, V. N.;Yaresko, A. N.;Jepsen, O.;
10:463:3 Valence-state model of strain-dependent Mn L-2,L-3 x-ray magnetic circular dichroism from ferromagnetic semiconductors
DOI:10.1103/PhysRevB.81.214422 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: van der Laan, G.;Edmonds, K. W.;Arenholz, E.;Farley, N. R. S.;Gallagher, B. L.;
10:463:4 Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) thin films
DOI:10.1063/1.3609776 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Wadley, P.;Casiraghi, A.;Wang, M.;Edmonds, K. W.;Campion, R. P.;Rushforth, A. W.;Gallagher, B. L.;Staddon, C. R.;Wang, K. Y.;van der Laan, G.;Arenholz, E.;
10:463:5 Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from K-edge x-ray magnetic circular dichroism
DOI:10.1103/PhysRevB.81.235208 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Wadley, P.;Freeman, A. A.;Edmonds, K. W.;van der Laan, G.;Chauhan, J. S.;Campion, R. P.;Rushforth, A. W.;Gallagher, B. L.;Foxon, C. T.;Wilhelm, F.;Smekhova, A. G.;Rogalev, A.;
10:463:6 Enhancement of room temperature ferromagnetism in Mn-implanted Si by He implantation
DOI:10.1063/1.4754712 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Chen, Jihong;Guo, Liping;Liu, Congxiao;Luo, Fengfeng;Li, Tiecheng;Zheng, Zhongcheng;Jin, Shuoxue;Yang, Zheng;
10:463:7 Electronic and magnetic properties of (Zn1-xVx)O diluted magnetic semiconductors elucidated from x-ray magnetic circular dichroism at V L-2,L-3 edges and first-principles calculations
DOI:10.1103/PhysRevB.84.134421 JN:PHYSICAL REVIEW B PY:2011
TC:4 AU: Bekenov, L. V.;Antonov, V. N.;Ostanin, S.;Yaresko, A. N.;Maznichenko, I. V.;Hergert, W.;Mertig, I.;Ernst, A.;
10:463:8 Induced magnetism on silicon in Fe3Si quasi-Heusler compound
DOI:10.1103/PhysRevB.85.214432 JN:PHYSICAL REVIEW B PY:2012
TC:4 AU: Antoniak, C.;Herper, H. C.;Zhang, Y. N.;Warland, A.;Kachel, T.;Stromberg, F.;Krumme, B.;Weis, C.;Fauth, K.;Keune, W.;Entel, P.;Wu, R. Q.;Lindner, J.;Wende, H.;
10:464:1 Photovoltaic and photoelectrical response of n-ZnO/p-Si heterostructures with ZnO films grown by an Atomic Layer Deposition method
DOI:10.1016/j.mssp.2013.11.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:5 AU: Pietruszka, R.;Luka, G.;Kopalko, K.;Zielony, E.;Bieganski, P.;Placzek-Popko, E.;Godlewski, M.;
10:464:2 Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer
DOI:10.1016/j.tsf.2012.05.003 JN:THIN SOLID FILMS PY:2012
TC:15 AU: Chirakkara, Saraswathi;Krupanidhi, S. B.;
10:464:3 Study of ZnO:Al films for silicon thin film solar cells
DOI:10.1016/j.apsusc.2012.07.159 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Zhu, H.;Huepkes, J.;Bunte, E.;Huang, S. M.;
10:464:4 ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics
DOI:10.1063/1.3672218 JN:APPLIED PHYSICS LETTERS PY:2011
TC:7 AU: Kaspar, T. C.;Droubay, T.;Jaffe, J. E.;
10:464:5 Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si
DOI:10.1063/1.3490622 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:17 AU: Rakhshani, A. E.;
10:464:6 Variation in band offsets at ZnO/Sn:In2O3 heterojunctions measured by x-ray photoelectron spectroscopy
DOI:10.1116/1.4719541 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:0 AU: Kaspar, Tiffany C.;Droubay, Tim C.;
10:464:7 Effect of the composition on physical properties of CdTe absorber layer fabricated by chemical molecular beam deposition for use in thin film solar cells
DOI:10.1063/1.4739277 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Razykov, T. M.;Amin, N.;Alghoul, M. A.;Ergashev, B.;Ferekides, C. S.;Goswami, Y.;Hakkulov, M. K.;Kouchkarov, K. M.;Sopian, K.;Sulaiman, M. Y.;Ullal, H. S.;
10:464:8 Electrical and photovoltaic properties of ZnO/Si heterostructures with ZnO films grown by atomic layer deposition
DOI:10.1016/j.tsf.2013.10.110 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Pietruszka, R.;Luka, G.;Witkowski, B. S.;Kopalko, K.;Zielony, E.;Bieganski, P.;Placzek-Popko, E.;Godlewski, M.;
10:464:9 Physical and photo-electrochemical characterizations of ZnO thin films deposited by ultrasonic spray method: Application to HCrO4- photoreduction
DOI:10.1016/j.apsusc.2013.12.059 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Zebbar, N.;Trari, M.;Doulache, M.;Boughelout, A.;Chabane, L.;
10:464:10 Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)
DOI:10.1116/1.4816951 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:0 AU: Jaffe, John E.;Kaspar, Tiffany C.;Droubay, Timothy C.;Varga, Tamas;
10:465:1 Effect of annealing on SiOx-TiO2 axial heterostructure nanowires and improved photodetection
DOI:10.1063/1.4858420 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Dhar, J. C.;Mondal, A.;Singh, N. K.;Chakrabartty, S.;Bhattacharyya, A.;Chattopadhyay, K. K.;
10:465:2 Enhanced photoemission from glancing angle deposited SiOx-TiO2 axial heterostructure nanowire arrays
DOI:10.1063/1.4803550 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Dhar, J. C.;Mondal, A.;Singh, N. K.;Chattopadhyay, K. K.;
10:465:3 Investigation of electrical transport in anodized single TiO2 nanotubes
DOI:10.1063/1.4789763 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Hattori, Masashi;Noda, Kei;Nishi, Tatsuya;Kobayashi, Kei;Yamada, Hirofumi;Matsushige, Kazumi;
10:465:4 Band gap enhancement of glancing angle deposited TiO2 nanowire array
DOI:10.1063/1.4749801 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Chinnamuthu, P.;Mondal, A.;Singh, N. K.;Dhar, J. C.;Chattopadhyay, K. K.;Bhattacharya, Sekhar;
10:465:5 Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis
DOI:10.1063/1.4811128 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Garcia Marin, A.;Garcia Nunez, C.;Ruiz, E.;Piqueras, J.;Pau, J. L.;
10:465:6 Ordered Si/Si-O nanowire array and its optical properties
DOI:10.1007/s00339-012-7250-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:3 AU: Mondal, A.;Singh, N. K.;Chinnamuthu, P.;Dhar, J. C.;Das, T. D.;Bose, P. K.;
10:465:7 High-purity hydrogen generation by ultraviolet illumination with the membrane composed of titanium dioxide nanotube array and Pd layer
DOI:10.1063/1.3643052 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Hattori, Masashi;Noda, Kei;Matsushige, Kazumi;
10:465:8 Enhanced ultraviolet electroluminescence from ZnO nanowires in TiO2/ZnO coaxial nanowires/poly(3,4-ethylenedioxythiophene)-poly(styrene-sulfonate) heterojunction
DOI:10.1063/1.3304896 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:12 AU: Lee, Chun-Yu;Wang, Jen-Yi;Chou, Yi;Liu, Meng-Yueh;Su, Wei-Fang;Chen, Yang-Fang;Lin, Ching-Fuh;
10:465:9 A simple method for the determination of doping type in nanomaterials based on electrical response to humidity
DOI:10.1063/1.4757609 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Han, Jin-Woo;Kim, Beomseok;Kobayashi, Nobuhiko P.;Li, Jing;Meyyappan, M.;
10:465:10 Transport properties of single TiO2 nanotubes
DOI:10.1063/1.4826640 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Stiller, Markus;Barzola-Quiquia, Jose;Lorite, Israel;Esquinazi, Pablo;Kirchgeorg, Robin;Albu, Sergiu P.;Schmuki, Patrik;
10:465:11 Investigation of electrical transport in anodized single TiO2 nanotubes (vol 102, 043105, 2013)
DOI:10.1063/1.4815940 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Hattori, Masashi;Noda, Kei;Nishi, Tatsuya;Kobayashi, Kei;Yamada, Hirofumi;Matsushige, Kazumi;
10:465:12 Effect of calcinations on electrical properties of TiO2 nanotubes
DOI:10.1063/1.4759358 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Vijayan, Pournami P.;Thomas, Marykutty;George, K. C.;
10:466:1 The influence of using different substrates on the structural and optical characteristics of ZnO thin films
DOI:10.1016/j.apsusc.2009.10.011 JN:APPLIED SURFACE SCIENCE PY:2010
TC:44 AU: Prepelita, Petronela;Medianu, R.;Sbarcea, Beatrice;Garoi, F.;Filipescu, Mihaela;
10:466:2 Spray-deposited Al-doped ZnO transparent contacts for CdTe solar cells
DOI:10.1016/j.solmat.2012.02.008 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2012
TC:28 AU: Crossay, A.;Buecheler, S.;Kranz, L.;Perrenoud, J.;Fella, C. M.;Romanyuk, Y. E.;Tiwari, A. N.;
10:466:3 Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method
DOI:10.1016/j.tsf.2013.05.150 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Kriisa, Merike;Kaerber, Erki;Krunks, Malle;Mikli, Valdek;Unt, Tarmo;Kukk, Mart;Mere, Arvo;
10:466:4 Photosensitive sol-gel preparation and direct micro-patterning of c-oriented ZnO film
DOI:10.1016/j.apsusc.2011.03.003 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Chen Yuanqing;Yan Fuxue;Zhao Gaoyang;Wang Zhezhe;
10:466:5 ZnO thin film nanostructures for hydrogen gas sensing applications
DOI:10.1016/j.ceramint.2012.10.111 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Al-Salman, Husam S.;Abdullah, M. J.;Al-Hardan, Naif;
10:466:6 Porous ZnO as a novel encapsulation matrix for quantum dot based luminescent down-shifting films
DOI:10.1016/j.matlet.2014.05.087 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Hodgson, S. D.;Jones, S.;Holliman, P. J.;Rugen-Hankey, S. L.;Barrioz, V.;Irvine, S. J. C.;
10:466:7 Characterization of novel sprayed Zn1-xMgxO films for photovoltaic application
DOI:10.1016/j.solmat.2010.04.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:6 AU: Prathap, P.;Reddy, A. Suryanarayana;Reddy, G. Ramachandra;Miles, R. W.;Reddy, K. T. Ramakrishna;
10:466:8 Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography
DOI:10.1016/j.apsusc.2009.12.039 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Sepulveda-Guzman, S.;Reeja-Jayan, B.;De la Rosa, E.;Ortiz-Mendez, U.;Reyes-Betanzo, C.;Cruz-Silva, R.;Jose-Yacaman, M.;
10:467:1 Development of a novel water-soluble magnetic fluorescent nanoparticle for the selective detection and removal of Cu2+
DOI:10.1088/0957-4484/24/49/495502 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Zhu, Baocun;Yang, Peilun;Yu, Haiqin;Yan, Liangguo;Wei, Qin;Du, Bin;
10:467:2 Preparation of spherical ZnO/ZnS core/shell particles and the photocatalytic activity for methyl orange
DOI:10.1016/j.matlet.2013.01.077 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Li, Wenjiang;Song, Ge;Xie, Fei;Chen, Minfang;Zhao, Yue;
10:467:3 Facile synthesis and photocatalytic activity of hollow micro-spherical zinc sulfide caps
DOI:10.1016/j.mssp.2013.07.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Liu, Zhongkui;Zhang, Danhui;Yang, Houbo;He, Ru;
10:467:4 A reusable naphthalimide-functionalized magnetic fluorescent nanosensor for the simultaneous determination and removal of trace Hg2+ in aqueous solution
DOI:10.1016/j.jcis.2012.09.005 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:11 AU: Zhao, Jie;Zhu, Baocun;Yu, Haiqin;Yan, Liangguo;Wei, Qin;Du, Bin;
10:467:5 Effects of Au catalysts for synthesis of ZnS microstructures on the sapphire substrate
DOI:10.1016/j.matlet.2012.11.120 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Lu, Junfeng;Zeng, Xianghua;Liu, Hongfei;Zhang, Wei;Zhang, Yong;Cui, Jieya;Hu, Chuan;
10:467:6 Controlled growth and photoluminescence of one-dimensional and platelike ZnS nanostructures
DOI:10.1016/j.apsusc.2012.05.042 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Lu, Junfeng;Zeng, Xianghua;Liu, Hongfei;Zhang, Wei;Zhang, Yong;
10:467:7 Low-temperature synthesis of hexagonal transition metal ion doped ZnS nanoparticles by a simple colloidal method
DOI:10.1016/j.apsusc.2012.12.160 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Wang, Liping;Huang, Shungang;Sun, Yujie;
10:467:8 Research on tribological behaviors of composite Zn/ZnS coating under dry condition
DOI:10.1016/j.apsusc.2011.06.149 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Kang Jia-jie;Wang Cheng-biao;Wang Hai-dou;Xu Bin-shi;Liu Jia-jun;Li Guo-lu;
10:467:9 Synthesis and adsorption/photocatalysis performance of pyrite FeS2
DOI:10.1016/j.apsusc.2012.12.061 JN:APPLIED SURFACE SCIENCE PY:2013
TC:11 AU: Liu, Shuling;Li, Miaomiao;Li, Shu;Li, Honglin;Yan, Lu;
10:467:10 Low-cost route for synthesis of mesoporous silica materials with high silanol groups and their application for Cu(II) removal
DOI:10.1016/j.matchemphys.2011.12.064 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:13 AU: Wang, Yangang;Huang, Sujun;Kang, Shifei;Zhang, Chengli;Li, Xi;
10:467:11 Development of novel naphthalimide-functionalized magnetic fluorescent nanoparticle for simultaneous determination and removal of Hg2+
DOI:10.1016/j.optmat.2013.06.006 JN:OPTICAL MATERIALS PY:2013
TC:2 AU: Zhu, Baocun;Zhao, Jie;Yu, Haiqin;Yan, Liangguo;Wei, Qin;Du, Bin;
10:468:1 Surfactant-free hydrothermal synthesis and optical properties of ZnS solid microspheres
DOI:10.1016/j.matlet.2014.03.103 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Zhao, Jingang;Liu, Renming;
10:468:2 Self-assembly of layered wurtzite ZnS nanorods/nanowires as highly efficient photocatalysts
DOI:10.1039/c1jm13259h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:17 AU: Liu, Yong;Hu, Juncheng;Zhou, Tengfei;Che, Renchao;Li, Jinlin;
10:468:3 Controlled synthesis, conversion and photoluminescence properties of hierarchical flower-like ZnS(En)(0.5) superstructures, ZnS and ZnO
DOI:10.1016/j.jallcom.2013.05.052 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Zhao, Jingang;Yin, Jingzhou;Yang, Mao;
10:468:4 Monodispersed synthesis of hierarchical wurtzite ZnS nanostructures and its functional properties
DOI:10.1016/j.matlet.2012.05.005 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Silambarasan, A.;Kavitha, Helen P.;Ponnusamy, S.;Navaneethan, M.;Hayakawa, Y.;
10:468:5 One-pot solvothermal strategy for the synthesis of ultrathin ZnS nanowires
DOI:10.1016/j.matlet.2013.01.128 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Zhang, Wen-Hui;Zhang, Wei-De;
10:468:6 Preparation of controlled-shape ZnS microcrystals and photocatalytic property
DOI:10.1016/j.ceramint.2013.08.131 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Zhang, Shujuan;
10:468:7 High-resolution transmission electron microscopy study of twinned ZnS nanoparticles
DOI:10.1016/j.matlet.2013.05.066 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Ahn, H. B.;Lee, J. Y.;
10:468:8 Wet chemical synthesis of Bi2S3 nanorods for efficient photocatalysis
DOI:10.1016/j.matlet.2013.04.006 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Luo, Yongfeng;Chen, Hong;Li, Xi;Gong, Zhiqiang;Wang, Xinjun;Peng, Xiaofang;He, Mengdong;Sheng, Zhongzhi;
10:469:1 Recent progress on growth and device development of ZnO and CuO nanostructures and graphene nanosheets
DOI:10.1039/c1jm15152e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:15 AU: Willander, Magnus;ul Hasan, Kamran;Nur, Omer;Zainelabdin, Ahmed;Zaman, Saima;Amin, Gul;
10:469:2 Low temperature aqueous chemical growth, structural, and optical properties of Mn-doped ZnO nanowires
DOI:10.1016/j.jcrysgro.2013.04.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Chey, Chan Oeurn;Nur, Omer;Willander, Magnus;
10:469:3 Synthesis and characterization of well-aligned catalyst-free phosphorus-doped ZnO nanowires
DOI:10.1016/j.jallcom.2011.09.018 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Karamdel, J.;Dee, C. F.;Saw, K. G.;Varghese, B.;Sow, C. H.;Ahmad, I.;Majlis, B. Y.;
10:469:4 Synthesis of ZnO nanoneedles by thermal oxidation of Zn thin films
DOI:10.1016/j.jnoncrysol.2013.05.003 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:4 AU: Mihailova, I.;Gerbreders, V.;Tamanis, E.;Sledevskis, E.;Viter, R.;Sarajevs, P.;
10:469:5 Synthetics of ZnO nanostructures by thermal oxidation in water vapor containing environments
DOI:10.1016/j.matlet.2010.09.052 JN:MATERIALS LETTERS PY:2011
TC:11 AU: Xu, C. H.;Lui, H. F.;Surya, C.;
10:469:6 Facile synthesis of ZnO/CuO nanostructures on cellulose paper and their p-n junction properties
DOI:10.1016/j.matlet.2013.10.103 JN:MATERIALS LETTERS PY:2014
TC:7 AU: Nagaraju, Goli;Ko, Yeong Hwan;Yu, Jae Su;
10:469:7 Mn-doped ZnO nanonails and their magnetic properties
DOI:10.1088/0957-4484/21/9/095606 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Zhang, Yuliang;Zhang, Hua;Li, Xiaofeng;Dong, Lihua;Zhong, Xinhua;
10:469:8 Obtaining ZnO/CIS heterostructures
DOI:10.1016/j.jnoncrysol.2010.12.018 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:2 AU: Mihailova, I.;Gerbreders, V.;Tamanis, E.;Sledevskis, E.;
10:470:1 The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films
DOI:10.1063/1.3483232 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Chun, B. S.;Wu, H. C.;Abid, M.;Chu, I. C.;Serrano-Guisan, S.;Shvets, I. V.;Choi, Daniel. S.;
10:470:2 Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering
DOI:10.1016/j.jallcom.2010.10.037 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:18 AU: Hsu, Che-Wei;Cheng, Tsung-Chieh;Yang, Chun-Hui;Shen, Yi-Ling;Wu, Jong-Shinn;Wu, Sheng-Yao;
10:470:3 The formation and acceptor related emission behavior of ZnO/ZnAl2O4 core-shell structures
DOI:10.1016/j.jallcom.2013.03.198 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Chen, X. Y.;Li, J. H.;Sun, Z. H.;Fang, X.;Wei, Z. P.;Fang, F.;Chu, X. Y.;Li, S.;Wang, X. H.;
10:470:4 Band gaps of graphene on layered ZnO substrate: A first principles study
DOI:10.1063/1.4789627 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Guo, X.;Zhou, Y. G.;
10:470:5 Role of electronic correlations in Ga
DOI:10.1063/1.3599532 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Zhu, Zhiyong;Wang, Xuhui;Schwingenschloegl, Udo;
10:470:6 Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal
DOI:10.1007/s00339-012-6874-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Yang, W. F.;Liu, Z. G.;Xie, Y. N.;Cai, J. F.;Liu, S.;Gong, H.;Wu, Z. Y.;
10:470:7 Room temperature electroluminescence from n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction device grown by PLD
DOI:10.1007/s13391-013-2206-3 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Zhang, Lichun;Li, Qingshan;Wang, Feifei;Qu, Chong;Zhao, Fengzhou;
10:470:8 Relation between the plasma characteristics and physical properties of functional zinc oxide thin film prepared by radio frequency magnetron sputtering process
DOI:10.1016/j.tsf.2009.07.181 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Hsu, Che-Wei;Cheng, Tsung-Chieh;Huang, Wen-Hsien;Wu, Jong-Shinn;Cheng, Cheng-Chih;Cheng, Kai-Wen;Huang, Shih-Chiang;
10:470:9 Study on oxygen source and its effect on film properties of ZnO deposited by radio frequency magnetron sputtering
DOI:10.1016/j.apsusc.2011.07.100 JN:APPLIED SURFACE SCIENCE PY:2011
TC:0 AU: Kamada, Yudai;Furuta, Mamoru;Hiramatsu, Takahiro;Kawaharamura, Toshiyuki;Wang, Dapeng;Shimakawa, Shin-ichi;Li, Chaoyang;Fujita, Shizuo;Hirao, Takashi;
10:470:10 Electron-electron interactions based metal-insulator transition in Ga doped ZnO thin films
DOI:10.1007/s13391-012-1086-2 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:4 AU: Naidu, R. V. Muniswami;Subrahmanyam, A.;Verger, A.;Jain, M. K.;Rao, S. V. N. Bhaskara;Jha, S. N.;Phase, D. M.;
10:470:11 Populations of metastable and resonant argon atoms in radio frequency magnetron plasmas used for deposition of indium-zinc-oxide films
DOI:10.1116/1.3674162 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:1 AU: Maaloul, L.;Morel, S.;Stafford, L.;
10:470:12 Measurements of sputtered neutrals and ions and investigation of their roles on the plasma properties during rf magnetron sputtering of Zn and ZnO targets
DOI:10.1116/1.4821186 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Maaloul, L.;Stafford, L.;
10:471:1 d(0) ferromagnetism in undoped n and p-type In2O3 films
DOI:10.1063/1.4755771 JN:APPLIED PHYSICS LETTERS PY:2012
TC:15 AU: Sun, Shaohua;Wu, Ping;Xing, Pengfei;
10:471:2 p-type conduction in sputtered indium oxide films
DOI:10.1063/1.3430035 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Stankiewicz, Jolanta;Villuendas, Francisco;Alcala, Rafael;
10:471:3 Defect-induced ferromagnetism in undoped In2O3 nanowires
DOI:10.1016/j.materresbull.2014.09.043 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Tien, Li-Chia;Hsieh, Yu-Yun;
10:471:4 Mechanism for p-type conduction in polycrystalline indium oxide films
DOI:10.1103/PhysRevB.85.125306 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Stankiewicz, Jolanta;Pilar Lozano, Maria;Villuendas, Francisco;
10:471:5 Transparent p-type AlN:SnO2 and p-AlN:SnO2/n-SnO2:In2O3 p-n junction fabrication
DOI:10.1063/1.4754134 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Liu, Y. S.;Hsieh, C. I.;Wu, Y. J.;Wei, Y. S.;Lee, P. M.;Liu, C. Y.;
10:471:6 Indium oxide thin-film homo-junctions: Morphology and electrical properties
DOI:10.1063/1.4819177 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Stankiewicz, Jolanta;Villuendas, Francisco;Pilar Lozano, Maria;Diez, Isabel;
10:471:7 Effects of crystalline structural transition on electronic-band structure of chromium-doped indium oxide
DOI:10.1016/j.tsf.2011.09.024 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Hsu, C. Y.;
10:472:1 Defect-induced ferromagnetism in undoped and Mn-doped zirconia thin films
DOI:10.1103/PhysRevB.82.125209 JN:PHYSICAL REVIEW B PY:2010
TC:22 AU: Zippel, Jan;Lorenz, Michael;Setzer, Annette;Wagner, Gerald;Sobolev, Nikolai;Esquinazi, Pablo;Grundmann, Marius;
10:472:2 O-vacancies mediated room temperature ferromagnetism in Cu-implanted In2O3:Cu nanowires
DOI:10.1063/1.4881840 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Zou, C. W.;Wu, H. Z.;Liang, F.;Xue, S. W.;Shao, L. X.;
10:472:3 Nanoscale inhomogeneities: A new path toward high Curie temperature ferromagnetism in diluted materials
DOI:10.1103/PhysRevB.85.014201 JN:PHYSICAL REVIEW B PY:2012
TC:9 AU: Chakraborty, Akash;Bouzerar, Richard;Kettemann, Stefan;Bouzerar, Georges;
10:472:4 Electrical transport and optical emission of MnxZr1-xO2(0 <= x <= 0.5) thin films
DOI:10.1063/1.3624581 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Zippel, J.;Lorenz, M.;Lenzner, J.;Grundmann, M.;Hammer, T.;Jacquot, A.;Boettner, H.;
10:472:5 Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates
DOI:10.1016/j.tsf.2013.11.100 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Guo, Yao;Inoue, Shigeru;Kobayashi, Atsushi;Ohta, Jitsuo;Fujioka, Hiroshi;
10:472:6 Dynamical properties of a three-dimensional diluted Heisenberg model
DOI:10.1103/PhysRevB.81.172406 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Chakraborty, Akash;Bouzerar, Georges;
10:472:7 Absence of ferromagnetism in Mn-doped tetragonal zirconia
DOI:10.1063/1.3626788 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Srivastava, S. K.;Lejay, P.;Barbara, B.;Boisron, O.;Pailhes, S.;Bouzerar, G.;
10:472:8 Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films
DOI:10.1080/14786435.2013.772307 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:0 AU: Zippel, Jan;Lorenz, Michael;Lenzner, Joerg;Wagner, Gerald;Grundmann, Marius;
10:472:9 Spontaneous magnetization in the presence of nanoscale inhomogeneities in diluted magnetic systems
DOI:10.1103/PhysRevB.86.214402 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Aizin, Gregory R.;Dyer, Gregory C.;Transmission line theory of collective plasma excitations in periodic;two-dimensional electron systems: Finite plasmonic crystals and Tamm;states;PHYSICAL REVIEW B;86;23;235316;10.1103/PhysRevB.86.235316;DEC 28 2012;2012;We present a comprehensive theory of the one-dimensional plasmonic;crystal formed in the grating-gated two-dimensional electron gas (2DEG);in semiconductor heterostructures. To describe collective plasma;excitations in the 2DEG, we develop a generalized transmission line;theoretical formalism consistent with the plasma hydrodynamic model. We;then apply this formalism to analyze the plasmonic spectra of 2DEG;systems with steplike periodic changes of electron density, gate;screening, or both. We show that in a periodically modulated 2DEG, a;plasmonic crystal is formed, and we derive closed-form analytical;expressions describing its energy band spectrum for both infinite and;finite size crystals. Our results demonstrate a nonmonotonic dependence;of the plasmonic band gap width on the electron density modulation. At;so-called transparency points, where the plasmon propagates through the;periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In;semi-infinite plasmonic crystals, we demonstrate the formation of;plasmonic Tamm states and analytically derive their energy dispersion;and spatial localization. Finally, we present detailed numerical;analysis of the plasmonic band structure of a finite four-period;plasmonic crystal terminated either by an ohmic contact or by an;infinite barrier on each side. We trace the evolution of the plasmonic;band spectrum, including the Tamm states, with changing electron density;modulation and analyze the boundary conditions necessary for formation;of the Tamm states. We also analyze interaction between the Tamm states;formed at the opposite edges of the short length plasmonic crystal. The;validity of our theoretical approach was confirmed in experimental;studies of plasmonic crystals in short, modulated plasmonic cavities;[Dyer et al., Phys. Rev. Lett. 109, 126803 (2012)], which demonstrated;excellent quantitative agreement between theory and experiment.;DOI:10.1103/PhysRevB.86.235316;9;0;0;0;9;1098-0121;WOS:000312833200005;;;J;Arakawa, Tomonori;Tanaka, Takahiro;Chida, Kensaku;Matsuo, Sadashige;Nishihara, Yoshitaka;Chiba, Daichi;Kobayashi, Kensuke;Ono, Teruo;Fukushima, Akio;Yuasa, Shinji;Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling;junctions;PHYSICAL REVIEW B;86;22;224423;10.1103/PhysRevB.86.224423;DEC 28 2012;2012;The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic;tunneling junctions were studied at low temperature. The measured 1/f;noise around the magnetic hysteresis loops of the free layer indicates;that the main origin of the 1/f noise is the magnetic fluctuation, which;is discussed in terms of a fluctuation-dissipation relation. Random;telegraph noise (RTN) is observed to be symmetrically enhanced in the;hysteresis loop with regard to the two magnetic configurations. We found;that this enhancement is caused by the fluctuation between two magnetic;states in the free layer. Although the 1/f noise is almost independent;of the magnetic configuration, the RTN is enhanced in the antiparallel;configuration. These findings indicate the presence of spin-dependent;activation of RTN. Shot noise reveals the spin-dependent coherent;tunneling process via a crystalline MgO barrier. DOI:;10.1103/PhysRevB.86.224423;Kobayashi, Kensuke/E-5404-2010;Kobayashi, Kensuke/0000-0001-7072-5945;4;0;0;0;4;1098-0121;WOS:000312832400004;;;J;Cucchiara, J.;Le Gall, S.;Fullerton, E. E.;Kim, J. -V.;Ravelosona, D.;Henry, Y.;Katine, J. A.;Kent, A. D.;Bedau, D.;Gopman, D.;Mangin, S.;Domain wall motion in nanopillar spin-valves with perpendicular;anisotropy driven by spin-transfer torques;PHYSICAL REVIEW B;86;21;214429;10.1103/PhysRevB.86.214429;DEC 28 2012;2012;Using transport measurements and micromagnetic simulations we have;investigated the domain wall motion driven by spin-transfer torques in;all-perpendicular hexagonal nanopillar spin-valves. In particular, we;probe domain walls nucleated in the free layer of the spin-valves, which;are then pinned in the devices. We have determined both the;field-current state diagrams for the domain-wall state and the thermally;activated dynamics of the nucleation and depinning processes. We show;that the nucleation process is well-described by a modified Neel-Brown;model taking into account the spin-transfer torque, whereas the;depinning process is independent of the current. This is confirmed by an;analytical calculation which shows that spin-torques have no effect on;the Arrhenius escape rate associated with thermally activated domain;wall depinning in this geometry. Furthermore, micromagnetic simulations;indicate that spin-transfer only weakly affects the domain wall motion,;but instead modifies the inner domain wall structure. DOI:;10.1103/PhysRevB.86.214429;Kim, Joo-Von/B-3672-2008; Fullerton, Eric/H-8445-2013;Kim, Joo-Von/0000-0002-3849-649X; Fullerton, Eric/0000-0002-4725-9509;0;0;0;0;0;1098-0121;WOS:000312830800003;;;J;Fernandez-Dominguez, A. I.;Zhang, P.;Luo, Y.;Maier, S. A.;Garcia-Vidal, F. J.;Pendry, J. B.;Transformation-optics insight into nonlocal effects in separated;nanowires;PHYSICAL REVIEW B;86;24;241110;10.1103/PhysRevB.86.241110;DEC 28 2012;2012;We present a transformation-optics approach which sheds analytical;insight into the impact that spatial dispersion has on the optical;response of separated dimers of metallic nanowires. We show that;nonlocal effects are apparent at interparticle distances one order of;magnitude larger than the longitudinal plasmon decay length, which;coincides with the spatial regime where electron tunneling phenomena;occur. Our method also clarifies the interplay between nonlocal and;radiation effects taking place in the nanostructure, yielding the dimer;dimensions that optimize its light harvesting capabilities. DOI:;10.1103/PhysRevB.86.241110;Luo, Yu/C-7799-2009; Fernandez-Dominguez, Antonio I./C-4448-2013; Garcia-Vidal, Francisco /B-8280-2011;Luo, Yu/0000-0003-2925-682X; Fernandez-Dominguez, Antonio;I./0000-0002-8082-395X; Garcia-Vidal, Francisco /0000-0003-4354-0982;10;0;0;0;10;1098-0121;WOS:000312834100001;;;J;Gati, E.;Koehler, S.;Guterding, D.;Wolf, B.;Knoener, S.;Ran, S.;Bud'ko, S. L.;Canfield, P. C.;Lang, M.;Hydrostatic-pressure tuning of magnetic, nonmagnetic, and;superconducting states in annealed Ca(Fe1-xCox)(2)As-2;PHYSICAL REVIEW B;86;22;220511;10.1103/PhysRevB.86.220511;DEC 28 2012;2012;We report on measurements of the magnetic susceptibility and electrical;resistance under He-gas pressure on single crystals of;Ca(Fe1-xCox)(2)As-2. We find that for properly heat-treated crystals;with modest Co concentration, x = 0.028, the salient ground states;associated with iron-arsenide superconductors, i.e.,;orthorhombic/antiferromagnetic (o/afm), superconducting, and nonmagnetic;collapsed-tetragonal (cT) states can be accessed all in one sample with;reasonably small and truly hydrostatic pressure. This is possible owing;to the extreme sensitivity of the o/afm (for T <= T-s,T-N) and;superconducting (T <= T-c) states against variation of pressure,;disclosing pressure coefficients of dT(s,N)/dP = -(1100 +/- 50) K/GPa;and dT(c)/dP = -(60 +/- 3) K/GPa, respectively. Systematic;investigations of the various phase transitions and ground states via;pressure tuning revealed no coexistence of bulk superconductivity (sc);with the o/afm state which we link to the strongly first-order character;of the corresponding structural/magnetic transition in this compound.;Our results, together with literature results, indicate that preserving;fluctuations associated with the o/afm transition to low enough;temperatures is vital for sc to form. DOI: 10.1103/PhysRevB.86.220511;Canfield, Paul/H-2698-2014;14;0;0;0;14;1098-0121;WOS:000312832400001;;;J;Hakobyan, Ye.;Tadmor, E. B.;James, R. D.;Objective quasicontinuum approach for rod problems;PHYSICAL REVIEW B;86;24;245435;10.1103/PhysRevB.86.245435;DEC 28 2012;2012;An objective quasicontinuum (OQC) method is developed for simulating;rodlike systems that can be represented as a combination of locally;objective structures. An objective structure (OS) is one for which a;group of atoms, called a "fundamental domain" (FD), is repeated using;specific rules of translation and rotation to build a more complex;structure. An objective Cauchy-Born rule defines the kinematics of the;OS atoms in terms of a set of symmetry parameters and the positions of;the FD atoms. The computational advantage lies in the capability of;representing a large system of atoms through a small set of symmetry;parameters and FD atom positions. As an illustrative example, we;consider the deformation of a copper single-crystal nanobeam which can;be described as an OS. OQC simulations are performed for uniform and;nonuniform bending for two different orientations (nanobeam axis;oriented along [111] and [100]) and compared with elastica results. In;the uniform bending case, the [111]-oriented single-crystal nanobeam;experiences elongation, while the [100]-oriented nanobeam experiences;contraction in total length. The nonuniform bending allows for;stretching, contraction, and bending as deformation. Under certain;loading conditions, dislocation nucleation is observed within the FD.;DOI: 10.1103/PhysRevB.86.245435 PACS number(s): 61.46.Km, 62.23.Hj,;81.07.Gf, 02.70.Ns;1;0;0;0;1;1098-0121;WOS:000312834100006;;;J;He, Jing;Wang, Bo;Kou, Su-Peng;Ferromagnetism and antiferromagnetism of a correlated topological;insulator with a flat band;PHYSICAL REVIEW B;86;23;235146;10.1103/PhysRevB.86.235146;DEC 28 2012;2012;In this paper, based on the mean-field approach and random-phase;approximation, we studied the magnetic properties of the spinfull;Haldane model on honeycomb lattice of topological flat band with onsite;repulsive Coulomb interaction. We found that the antiferromagnetic (AF);order is more stable than the ferromagnetic (FM) order at, or near, half;filling. Away from half filling, the phase diagram becomes complex: at;large doping, the FM order is more stable than the AF order due to the;flatness of band structure. In particular, we found that at quarter;filling, the system becomes a Chern number Q = 1 topological insulator;induced by the FM order. DOI:10.1103/PhysRevB.86.235146;1;0;0;0;1;1098-0121;WOS:000312833200002;;;J;Hu, Jianbo;Misochko, Oleg V.;Goto, Arihiro;Nakamura, Kazutaka G.;Delayed formation of coherent LO phonon-plasmon coupled modes in n- and;p-type GaAs measured using a femtosecond coherent control technique;PHYSICAL REVIEW B;86;23;235145;10.1103/PhysRevB.86.235145;DEC 28 2012;2012;Coherent control experiments using a pair of collinear femtosecond laser;pulses have been carried out to manipulate longitudinal optical (LO);phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning;the interpulse separation, remarkably distinct responses have been;observed in the two samples. To understand the results obtained a;phenomenological model taking the delayed formation of coherent LOPC;modes into account is proposed. The model suggests that the lifetime of;coherent LOPC modes plays a key role and the interference of the;coherent LO phonons excited successively by two pump pulses strongly;affects the manipulation of coherent LOPC modes.;DOI:10.1103/PhysRevB.86.235145;Oleg, Misochko/E-6136-2013; Nakamura, Kazutaka/F-4095-2014;0;0;0;0;0;1098-0121;WOS:000312833200001;;;J;Imura, Ken-Ichiro;Okamoto, Mayuko;Yoshimura, Yukinori;Takane, Yositake;Ohtsuki, Tomi;Finite-size energy gap in weak and strong topological insulators;PHYSICAL REVIEW B;86;24;245436;10.1103/PhysRevB.86.245436;DEC 28 2012;2012;The nontrivialness of a topological insulator (TI) is characterized;either by a bulk topological invariant or by the existence of a;protected metallic surface state. Yet, in realistic samples of finite;size, this nontrivialness does not necessarily guarantee the gaplessness;of the surface state. Depending on the geometry and on the topological;indices, a finite-size energy gap of different nature can appear, and,;correspondingly, exhibit various scaling behaviors of the gap. The;spin-to-surface locking provides one such gap-opening mechanism,;resulting in a power-law scaling of the energy gap. Weak and strong TIs;show different degrees of sensitivity to the geometry of the sample. As;a noteworthy example, a strong TI nanowire of a rectangular-prism shape;is shown to be more gapped than that of a weak TI of precisely the same;geometry. DOI: 10.1103/PhysRevB.86.245436 PACS number(s): 73.22.-f,;73.20.At, 72.80.Sk;Imura, Ken/D-6633-2013;11;0;0;0;11;1098-0121;WOS:000312834100007;;;J;Lenertz, M.;Alaria, J.;Stoeffler, D.;Colis, S.;Dinia, A.;Mentre, O.;Andre, G.;Porcher, F.;Suard, E.;Magnetic structure of ground and field-induced ordered states of;low-dimensional alpha-CoV2O6: Experiment and theory;PHYSICAL REVIEW B;86;21;214428;10.1103/PhysRevB.86.214428;DEC 28 2012;2012;In this work, we investigate the magnetic properties of the monoclinic;alpha-CoV2O6 by powder neutron diffraction measurements and ab initio;calculations. An emphasis has been pointed towards the magnetic;structure and the interaction between the Co ions leading to magnetic;frustrations in this compound. Neutron diffraction experiments were;carried out both in the ground state (zero magnetic field) and under;applied external field of 2.5 and 5 T corresponding to the ferrimagnetic;and ferromagnetic states, respectively. The antiferromagnetic ground;state below 14 K corresponds to k = (1,0, 1/2) magnetic propagation;vector in C1 space group. The magnetic structure can be described by;ferromagnetic interactions along the chains (b axis) and;antiferromagnetic coupling between the chains (along a and c axes). The;ferrimagnetic structure implies a ninefold unit cell (3a, b, 3c) in;which ferromagnetic chains follow an "up-up-down" sequence along the a;and c axes. In the ferromagnetic state, the spin orientations remain;unchanged while every chain lies ferromagnetically ordered. In all;cases, the magnetic moments lie in the ac plane, along the CoO6;octahedra axis, at an angle of 9.3 degrees with respect to the c axis.;The magnetic structure of alpha-CoV2O6 resolved for all the ordered;states is successfully related to a theoretical model. Ab initio;calculations allowed us to (i) confirm the ground-state magnetic;structure, (ii) calculate the interactions between the Co ions, (iii);explain the frustration leading to the stepped variation of the;magnetization curves, (iv) calculate the orbital magnetic moment (1.5;mu(B)) on Co atoms, and (v) confirm the direction of the magnetic;moments near the c direction. DOI: 10.1103/PhysRevB.86.214428;10;0;0;0;10;1098-0121;WOS:000312830800002;;;J;Nakajima, Nobuo;Oki, Megumi;Isohama, Yoichi;Maruyama, Hiroshi;Tezuka, Yasuhisa;Ishiji, Kotaro;Iwazumi, Toshiaki;Okada, Kozo;Enhancement of dielectric constant of BaTiO3 nanoparticles studied by;resonant x-ray emission spectroscopy;PHYSICAL REVIEW B;86;22;224114;10.1103/PhysRevB.86.224114;DEC 28 2012;2012;The nanoscopic origin of the enhancement of the dielectric constant of;BaTiO3 nanoparticles was investigated by means of Ti K beta resonant;x-ray emission spectroscopy. Two inelastic peaks due to charge-transfer;excitations were observed, one of which disappeared as the particle size;(d) was reduced, while the other remained unchanged. This is consistent;with the fact that tetragonality was also reduced with decreasing d. The;origin of the large enhancement in the dielectric constant is briefly;discussed from a microscopic point of view. DOI:;10.1103/PhysRevB.86.224114;3;0;0;0;3;1098-0121;WOS:000312832400003;;;J;Olmon, Robert L.;Slovick, Brian;Johnson, Timothy W.;Shelton, David;Oh, Sang-Hyun;Boreman, Glenn D.;Raschke, Markus B.;Optical dielectric function of gold;PHYSICAL REVIEW B;86;23;235147;10.1103/PhysRevB.86.235147;DEC 28 2012;2012;In metal optics gold assumes a special status because of its practical;importance in optoelectronic and nano-optical devices, and its role as a;model system for the study of the elementary electronic excitations that;underlie the interaction of electromagnetic fields with metals. However,;largely inconsistent values for the frequency dependence of the;dielectric function describing the optical response of gold are found in;the literature. We performed precise spectroscopic ellipsometry;measurements on evaporated gold, template-stripped gold, and;single-crystal gold to determine the optical dielectric function across;a broad spectral range from 300 nm to 25 mu m (0.05-4.14 eV) with high;spectral resolution. We fit the data to the Drude free-electron model,;with an electron relaxation time tau(D) = 14 +/- 3 fs and plasma energy;h omega(p) = 8.45 eV. We find that the variation in dielectric functions;for the different types of samples is small compared to the range of;values reported in the literature. Our values, however, are comparable;to the aggregate mean of the collection of previous measurements from;over the past six decades. This suggests that although some variation;can be attributed to surface morphology, the past measurements using;different approaches seem to have been plagued more by systematic errors;than previously assumed. DOI:10.1103/PhysRevB.86.235147;22;2;0;0;22;1098-0121;WOS:000312833200003;;;J;Phuong, L. Q.;Ichimiya, M.;Ishihara, H.;Ashida, M.;Multiple light-coupling modes of confined excitons observable in;photoluminescence spectra of high-quality CuCl thin films;PHYSICAL REVIEW B;86;23;235449;10.1103/PhysRevB.86.235449;DEC 28 2012;2012;We report the observation of multiple light-coupling modes of excitons;confined in CuCl thin films with thicknesses of a few hundred nanometers;beyond the long-wavelength approximation in photoluminescence spectra.;Due to a remarkably long coupling length between light and;multinode-type excitons resulted from very high crystalline quality of;thin films, photoluminescence signals from the excitonic states;corresponding to not only odd but also even quantum numbers, which are;optically forbidden in the long-wavelength approximation, are clearly;observed. The full width at half maximum of the excitonic state deduced;qualitatively from the corresponding photoluminescence band shows almost;the same dependence on the quantum number as the theoretical prediction.;DOI:10.1103/PhysRevB.86.235449;0;0;0;0;0;1098-0121;WOS:000312833200008;;;J;Reynoso, Andres A.;Usaj, Gonzalo;Balseiro, C. A.;Feinberg, D.;Avignon, M.;Spin-orbit-induced chirality of Andreev states in Josephson junctions;PHYSICAL REVIEW B;86;21;214519;10.1103/PhysRevB.86.214519;DEC 28 2012;2012;We study Josephson junctions (JJs) in which the region between the two;superconductors is a multichannel system with Rashba spin-orbit coupling;(SOC) where a barrier or a quantum point contact (QPC) is present. These;systems might present unconventional Josephson effects such as Josephson;currents for zero phase difference or critical currents that depend on;the current direction. Here, we discuss how the spin polarizing;properties of the system in the normal state affect the spin;characteristics of the Andreev bound states inside the junction. This;results in a strong correlation between the spin of the Andreev states;and the direction in which they transport Cooper pairs. While the;current-phase relation for the JJ at zero magnetic field is;qualitatively unchanged by SOC, in the presence of a weak magnetic;field, a strongly anisotropic behavior and the mentioned anomalous;Josephson effects follow. We show that the situation is not restricted;to barriers based on constrictions such as QPCs and should generically;arise if in the normal system the direction of the carrier's spin is;linked to its direction of motion. DOI: 10.1103/PhysRevB.86.214519;Usaj, Gonzalo/E-6394-2010;Usaj, Gonzalo/0000-0002-3044-5778;5;0;0;0;5;1098-0121;WOS:000312830800005;;;J;Sato, W.;Komatsuda, S.;Ohkubo, Y.;Characteristic local association of In impurities dispersed in ZnO;PHYSICAL REVIEW B;86;23;235209;10.1103/PhysRevB.86.235209;DEC 28 2012;2012;Local environments in 0.5 at.% In-doped ZnO were investigated by means;of the time-differential perturbed angular correlation (TDPAC) method.;In a comparative study, using the Cd-111 probe nuclei as the decay;products of different parents, In-111 and Cd-111m, we found that In-111;microscopically forms a unique structure with nonradioactive In ion(s);dispersed in ZnO, whereas (111)mCd has no specific interaction with the;In impurities. The spectral damping of the TDPAC spectra is attributed;to the aftereffect following the EC decay of In-111. It was demonstrated;from the aftereffect that the local density and/or mobility of;conduction electrons at the In-111 probe site in the In-doped ZnO is;lowered due to the characteristic structure locally formed by the;dispersed In ion(s). DOI:10.1103/PhysRevB.86.235209;1;0;0;0;1;1098-0121;WOS:000312833200004;;;J;Sherman, Benjamin L.;Wilson, Hugh F.;Weeraratne, Dayanthie;Militzer, Burkhard;Ab initio simulations of hot dense methane during shock experiments;PHYSICAL REVIEW B;86;22;224113;10.1103/PhysRevB.86.224113;DEC 28 2012;2012;Using density functional theory molecular dynamics simulations, we;predict shock Hugoniot curves of precompressed methane up to 75 000 K;for initial densities ranging from 0.35 to 0.70 g cm(-3). At 4000 K, we;observe the transformation into a metallic, polymeric state consisting;of long hydrocarbon chains. These chains persist when the sample is;quenched to 300 K, leading to an increase in shock compression. At 6000;K, the sample transforms into a plasma composed of many, short-lived;chemical species. We conclude by discussing implications for the;interiors of Uranus and Neptune and analyzing the possibility of;creating a superionic state of methane in high pressure experiments.;DOI:10.1103/PhysRevB.86.224113;Wilson, Hugh/B-3447-2009;4;0;0;0;4;1098-0121;WOS:000312832400002;;;J;Trescher, Maximilian;Bergholtz, Emil J.;Flat bands with higher Chern number in pyrochlore slabs;PHYSICAL REVIEW B;86;24;241111;10.1103/PhysRevB.86.241111;DEC 28 2012;2012;A large number of recent works point to the emergence of intriguing;analogs of fractional quantum Hall states in lattice models due to;effective interactions in nearly flat bands with Chern number C = 1.;Here, we provide an intuitive and efficient construction of almost;dispersionless bands with higher Chern numbers. Inspired by the physics;of quantum Hall multilayers and pyrochlore-based transition-metal;oxides, we study a tight-binding model describing spin-orbit coupled;electrons in N parallel kagome layers connected by apical sites forming;N - 1 intermediate triangular layers (as in the pyrochlore lattice). For;each N, we find finite regions in parameter space giving a virtually;flat band with C = N. We analytically express the states within these;topological bands in terms of single-layer states and thereby explicitly;demonstrate that the C = N wave functions have an appealing structure in;which layer index and translations in reciprocal space are intricately;coupled. This provides a promising arena for new collective states of;matter. DOI: 10.1103/PhysRevB.86.241111;Bergholtz, Emil/C-3820-2008;Bergholtz, Emil/0000-0002-9739-2930;29;0;1;0;29;1098-0121;WOS:000312834100002;;;J;van Duijn, J.;Ruiz-Bustos, R.;Daoud-Aladine, A.;Kagome-like lattice distortion in the pyrochlore material Hg2Ru2O7;PHYSICAL REVIEW B;86;21;214111;10.1103/PhysRevB.86.214111;DEC 28 2012;2012;The structural transition which accompanies the metal to insulator;transition (MIT), at T = 107 K, in the pyrochlore material Hg2Ru2O7, was;investigated by high-resolution neutron powder diffraction measurements.;Below the MIT the symmetry is lowered from cubic to monoclinic and the;Ru-Ru bonds, which are equal in the pyrochlore phase (3.60147 angstrom),;become split into short (3.599 37 angstrom), medium (3.6028 angstrom),;and long bonds (3.6047 angstrom). As a result the exchange interactions;between the Ru atoms become more two dimensional. The short and medium;bonds form layers, which are separated by the long bonds, that run;parallel to the monoclinic ab plane. Overall the low-temperature;structure of Hg2Ru2O7 can best be described as a stacking of Kagome-like;layers. DOI: 10.1103/PhysRevB.86.214111;0;0;0;0;0;1098-0121;WOS:000312830800001;;;J;Vanevic, Mihajlo;Belzig, Wolfgang;Control of electron-hole pair generation by biharmonic voltage drive of;a quantum point contact;PHYSICAL REVIEW B;86;24;241306;10.1103/PhysRevB.86.241306;DEC 28 2012;2012;A time-dependent electromagnetic field creates electron-hole excitations;in a Fermi sea at low temperature. We show that the electron-hole pairs;can be generated in a controlled way using harmonic and biharmonic;time-dependent voltages applied to a quantum contact, and we obtain the;probabilities of the pair creations. For a biharmonic voltage drive, we;find that the probability of a pair creation decreases in the presence;of an in-phase second harmonic. This accounts for the suppression of the;excess noise observed experimentally (Gabelli and Reulet,;arXiv:1205.3638), proving that dynamic control and detection of;elementary excitations in quantum conductors are within the reach of the;present technology. DOI: 10.1103/PhysRevB.86.241306;6;1;0;0;6;1098-0121;WOS:000312834100004;;;J;Virgus, Yudistira;Purwanto, Wirawan;Krakauer, Henry;Zhang, Shiwei;Ab initio many-body study of cobalt adatoms adsorbed on graphene;PHYSICAL REVIEW B;86;24;241406;10.1103/PhysRevB.86.241406;DEC 28 2012;2012;Many recent calculations have been performed to study a Co atom adsorbed;on graphene, with significantly varying results on the nature of the;bonding. We use the auxiliary-field quantum Monte Carlo method and a;size-correction embedding scheme to accurately calculate the binding;energy of Co on graphene. We find that as a function of the distance h;between the Co atom and the sixfold hollow site, there are three;distinct ground states corresponding to three electronic configurations;of the Co atom. Two of these states provide binding and exhibit a;double-well feature with nearly equal binding energy of 0.4 eV at h =;1.51 and h = 1.65 angstrom, corresponding to low-spin Co-2 (3d(9) 4s(0));and high-spin Co-4 (3d(8) 4s(1)), respectively. DOI:;10.1103/PhysRevB.86.241406;3;0;0;0;3;1098-0121;WOS:000312834100005;;;J;Xing, Jie;Li, Sheng;Ding, Xiaxin;Yang, Huan;Wen, Hai-Hu;Superconductivity appears in the vicinity of semiconducting-like;behavior in CeO1-xFxBiS2;PHYSICAL REVIEW B;86;21;214518;10.1103/PhysRevB.86.214518;DEC 28 2012;2012;Resistive and magnetic properties have been measured in BiS2-based;samples CeO1-xFxBiS2 with a systematic substitution of O with F (0 < x <;0.6). In contrast to the band-structure calculations, it is found that;the parent phase of CeOBiS2 is a bad metal instead of a band insulator.;By doping electrons into the system, it is surprising to find that;superconductivity appears together with a semiconducting normal state.;This evolution is clearly different from the cuprate and the iron;pnictide systems, and is interpreted as approaching the Pomeranchuk;transition with a von Hove singularity and the possible;charge-density-wave instability. Furthermore, ferromagnetism, which may;arise from the Ce magnetic moments, has been observed in the;low-temperature region in all samples, suggesting the coexistence of;superconductivity and ferromagnetism in the superconducting samples.;DOI: 10.1103/PhysRevB.86.214518;55;0;1;0;56;1098-0121;WOS:000312830800004;;;J;Yaji, Koichiro;Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi;Structural and electronic properties of the Pb/Ge(111)-beta(root 3 x;root 3)R30 degrees surface studied by photoelectron spectroscopy and;first-principles calculations;PHYSICAL REVIEW B;86;23;235317;10.1103/PhysRevB.86.235317;DEC 28 2012;2012;We have studied structural and electronic properties of a Ge(111);surface covered with a monatomic Pb layer [Pb/Ge(111)-beta] by means of;core-level photoelectron spectroscopy, angle-resolved photoelectron;spectroscopy (ARPES), and a first-principles band structure calculation.;There has been a controversy about the surface structure of;Pb/Ge(111)-beta between a close-packed model with a coverage of 4/3;monolayers and a trimer model with a coverage of 1 monolayer. This;problem has been examined by analyzing the line shape of a Pb 5d;core-level spectrum and comparing the experimental band structure with;those calculated for two models. The line shape of the core-level;spectrum agrees with a close-packed model. The valence band structure;observed by ARPES has been well reproduced by the calculation employing;the close-packed model. The close-packed model therefore describes;correctly the surface structure of Pb/Ge(111)-beta. The;scanning-tunneling microscopy (STM) image simulated for the close-packed;model is in good agreement with the experimental filled-state STM image,;in which three protrusions per unit cell were observed.;DOI:10.1103/PhysRevB.86.235317;Aruga, Tetsuya/B-7782-2010; Okuyama, Hiroshi/H-7570-2014;2;1;0;0;2;1098-0121;WOS:000312833200006;;;J;Yang, Shuo;Gu, Zheng-Cheng;Sun, Kai;Das Sarma, S.;Topological flat band models with arbitrary Chern numbers;PHYSICAL REVIEW B;86;24;241112;10.1103/PhysRevB.86.241112;DEC 28 2012;2012;We report the theoretical discovery of a systematic scheme to produce;topological flat bands (TFBs) with arbitrary Chern numbers. We find that;generically a multiorbital high Chern number TFB model can be;constructed by considering multilayer Chern number C = 1 TFB models with;enhanced translational symmetry. A series of models are presented as;examples, including a two-band model on a triangular lattice with a;Chern number C = 3 and an N-band square lattice model with C = N for an;arbitrary integer N. In all these models, the flatness ratio for the;TFBs is larger than 30 and increases with increasing Chern number. In;the presence of appropriate interparticle interactions, these models are;likely to lead to the formation of Abelian and non-Abelian fractional;Chern insulators. As a simple example, we test the C = 2 model with;hardcore bosons at 1/3 filling, and an intriguing fractional quantum;Hall state is observed. DOI: 10.1103/PhysRevB.86.241112;Sun, Kai/F-2282-2010; Yang, Shuo/D-1372-2011; Das Sarma, Sankar/B-2400-2009; Gu, Zheng-Cheng/L-5415-2014;Sun, Kai/0000-0001-9595-7646; Yang, Shuo/0000-0001-9733-8566;;24;0;1;0;24;1098-0121;WOS:000312834100003;;;J;Yue, Qu;Chang, Shengli;Tan, Jichun;Qin, Shiqiao;Kang, Jun;Li, Jingbo;Symmetry-dependent transport properties and bipolar spin filtering in;zigzag alpha-graphyne nanoribbons;PHYSICAL REVIEW B;86;23;235448;10.1103/PhysRevB.86.235448;DEC 28 2012;2012;First-principles calculations are performed to investigate the transport;properties of zigzag alpha-graphyne nanoribbons (ZaGNRs). It is found;that asymmetric Z alpha GNRs behave as conductors with linear;current-voltage relationships, whereas symmetric Z alpha GNRs have very;small currents under finite bias voltages, similar to those of zigzag;graphene nanoribbons. The symmetry-dependent transport properties arise;from different coupling rules between the pi and pi* subbands around the;Fermi level, which are dependent on the wave-function symmetry of the;two subbands. Based on the coupling rules, we further demonstrate the;bipolar spin-filtering effect in the symmetric Z alpha GNRs. It is shown;that nearly 100% spin-polarized current can be produced and modulated by;the direction of bias voltage and/or magnetization configuration of the;electrodes. Moreover, the magnetoresistance effect with the order larger;than 500 000% is also predicted. Our calculations suggest Z alpha GNRs;as a promising candidate material for spintronics.;DOI:10.1103/PhysRevB.86.235448;Kang, Jun/F-7105-2011;7;1;0;0;7;1098-0121;WOS:000312833200007;;;J;Berry, Joel;Provatas, Nikolas;Rottler, Joerg;Sinclair, Chad W.;Defect stability in phase-field crystal models: Stacking faults and;partial dislocations;PHYSICAL REVIEW B;86;22;224112;10.1103/PhysRevB.86.224112;DEC 27 2012;2012;The primary factors controlling defect stability in phase-field crystal;(PFC) models are examined, with illustrative examples involving several;existing variations of the model. Guidelines are presented for;constructing models with stable defect structures that maintain high;numerical efficiency. The general framework combines both long-range;elastic fields and basic features of atomic-level core structures, with;defect dynamics operable over diffusive time scales. Fundamental;elements of the resulting defect physics are characterized for the case;of fcc crystals. Stacking faults and split Shockley partial dislocations;are stabilized for the first time within the PFC formalism, and various;properties of associated defect structures are characterized. These;include the dissociation width of perfect edge and screw dislocations,;the effect of applied stresses on dissociation, Peierls strains for;glide, and dynamic contraction of gliding pairs of partials. Our results;in general are shown to compare favorably with continuum elastic;theories and experimental findings. DOI: 10.1103/PhysRevB.86.224112;Rottler, Joerg/L-5539-2013;8;0;0;0;8;1098-0121;WOS:000312831900001;;;J;Emary, Clive;Lambert, Neill;Nori, Franco;Leggett-Garg inequality in electron interferometers;PHYSICAL REVIEW B;86;23;235447;10.1103/PhysRevB.86.235447;DEC 27 2012;2012;We consider the violation of the Leggett-Garg inequality in electronic;Mach-Zehnder inteferometers. This setup has two distinct advantages over;earlier quantum-transport proposals: Firstly, the required correlation;functions can be obtained without time-resolved measurements. Secondly,;the geometry of an interferometer allows one to construct the;correlation functions from ideal negative measurements, which addresses;the noninvasiveness requirement of the Leggett-Garg inequality. We;discuss two concrete realizations of these ideas: the first in quantum;Hall edge-channels, the second in a double quantum dot interferometer.;DOI: 10.1103/PhysRevB.86.235447 PACS number(s): 03.65.Ud, 73.23.-b,;03.65.Ta, 42.50.Lc;Lambert, Neill/B-4998-2009; Emary, Clive/B-9596-2008; Nori, Franco/B-1222-2009;Emary, Clive/0000-0002-9822-8390; Nori, Franco/0000-0003-3682-7432;3;0;0;0;3;1098-0121;WOS:000312832900004;;;J;Kato, Yuto;Endo, Akira;Katsumoto, Shingo;Iye, Yasuhiro;Geometric resonances in the magnetoresistance of hexagonal lateral;superlattices;PHYSICAL REVIEW B;86;23;235315;10.1103/PhysRevB.86.235315;DEC 27 2012;2012;We have measured magnetoresistance of hexagonal lateral superlattices.;We observe three types of oscillations engendered by periodic potential;modulation having hexagonal-lattice symmetry: amplitude modulation of;the Shubnikov-de Haas oscillations, commensurability oscillations, and;the geometric resonances of open orbits generated by Bragg reflections.;The latter two reveal the presence of two characteristic periodicities,;root 3a/2 and a/2, inherent in a hexagonal lattice with the lattice;constant a. The formation of the hexagonal-superlattice minibands;manifested by the observation of open orbits marks the first step toward;realizing massless Dirac fermions in semiconductor 2DEGs. DOI:;10.1103/PhysRevB.86.235315 PACS number(s): 73.43.Qt, 73.23.-b, 73.21.Cd;1;0;0;0;1;1098-0121;WOS:000312832900002;;;J;Lin, I-Tan;Liu, Jia-Ming;Shi, Kai-Yao;Tseng, Pei-Shan;Wu, Kuang-Hsiung;Luo, Chih-Wei;Li, Lain-Jong;Terahertz optical properties of multilayer graphene: Experimental;observation of strong dependence on stacking arrangements and;misorientation angles;PHYSICAL REVIEW B;86;23;235446;10.1103/PhysRevB.86.235446;DEC 27 2012;2012;The optical conductivity of monolayer and multilayer graphene in the;terahertz spectral region is experimentally measured using terahertz;time-domain spectroscopy. The stacking arrangement and the;misorientation angle of each sample are determined by Raman;spectroscopy. The chemical potential of each sample is measured using;ultrafast midinfrared pump-probe spectroscopy to be 63 or 64 meV for all;samples. The intraband scattering rate can be obtained by fitting the;measured data with theoretical models. Other physical parameters,;including carrier density, dc conductivity, and carrier mobility, of;each sample can also be deduced from the theoretical fitting. The;fitting results show the existence of misoriented or AA-stacked layers;with an interaction energy of alpha(1) = 217 meV in our multilayer;samples. Here we show that the scattering rate strongly depends on the;stacking arrangement of the sample. High scattering rates and high;optical conductivity are associated with AA-stacked samples, while lower;ones are associated with misoriented multilayer graphene. This implies;that the THz optoelectronic properties of multilayer graphene can be;tuned by purposefully misorienting layers or employing different;stacking schemes. DOI: 10.1103/PhysRevB.86.235446 PACS number(s):;78.67.Wj, 61.48.Gh, 72.80.Vp, 73.50.Mx;Li, Lain-Jong/D-5244-2011; Luo, Chih Wei/D-3485-2013;Li, Lain-Jong/0000-0002-4059-7783; Luo, Chih Wei/0000-0002-6453-7435;11;0;0;0;11;1098-0121;WOS:000312832900003;;;J;Lundgren, Rex;Chua, Victor;Fiete, Gregory A.;Entanglement entropy and spectra of the one-dimensional Kugel-Khomskii;model;PHYSICAL REVIEW B;86;22;224422;10.1103/PhysRevB.86.224422;DEC 27 2012;2012;We study the quantum entanglement of the spin and orbital degrees of;freedom in the one-dimensional Kugel-Khomskii model, which includes both;gapless and gapped phases, using analytical techniques and exact;diagonalization with up to 16 sites. We compute the entanglement entropy;and the entanglement spectra using a variety of partitions or "cuts" of;the Hilbert space, including two distinct real-space cuts and a;momentum-space cut. Our results show that the Kugel-Khomski model;possesses a number of new features not previously encountered in studies;of the entanglement spectra. Notably, we find robust gaps in the;entanglement spectra for both gapped and gapless phases with the orbital;partition, and show these are not connected to each other. The counting;of the low-lying entanglement eigenvalues shows that the "virtual edge";picture, which equates the low-energy Hamiltonian of a virtual edge,;here one gapless leg of a two-leg ladder, to the "low-energy";entanglement Hamiltonian, breaks down for this model, even though the;equivalence has been shown to hold for a similar cut in a large class of;closely related models. In addition, we show that a momentum space cut;in the gapless phase leads to qualitative differences in the;entanglement spectrum when compared with the same cut in the gapless;spin-1/2 Heisenberg spin chain. We emphasize the new information content;in the entanglement spectra compared to the entanglement entropy, and;using quantum entanglement, we present a refined phase diagram of the;model. Using analytical arguments, exploiting various symmetries of the;model, and applying arguments of adiabatic continuity from two exactly;solvable points of the model, we are also able to prove several results;regarding the structure of the low-lying entanglement eigenvalues. DOI:;10.1103/PhysRevB.86.224422;11;0;1;0;12;1098-0121;WOS:000312831900002;;;J;L'vov, Victor S.;Nazarenko, Sergey V.;Comment on "Symmetry of Kelvin-wave dynamics and the Kelvin-wave cascade;in the T=0 superfluid turbulence";PHYSICAL REVIEW B;86;22;226501;10.1103/PhysRevB.86.226501;DEC 27 2012;2012;We comment on the paper by Sonin [Phys. Rev. B 85, 104516 (2012)] with;most statements of which we disagree. We use this option to shed light;on some important issues of a theory of Kelvin-wave turbulence, touched;on in Sonin's paper, in particular, on the relation between the Vinen;spectrum of strong and the L'vov-Nazarenko spectrum of weak turbulence;of Kelvin waves. We also discuss the role of explicit calculation of the;Kelvin-wave interaction Hamiltonian and "symmetry arguments" that have;to resolve a contradiction between the Kozik-Svistunov and the;L'vov-Nazarenko spectrum of weak turbulence of Kelvin waves. DOI:;10.1103/PhysRevB.86.226501;5;1;0;0;5;1098-0121;WOS:000312831900003;;;J;Misguich, G.;Schwinger boson mean-field theory: Numerics for the energy landscape and;gauge excitations in two-dimensional antiferromagnets;PHYSICAL REVIEW B;86;24;245132;10.1103/PhysRevB.86.245132;DEC 27 2012;2012;We perform some systematic numerical search for Schwinger boson;mean-field states on square and triangular clusters. We look for;possible inhomogeneous ground states as well as low-energy excited;saddle points. The spectrum of the Hessian is also computed for each;solution. On the square lattice, we find gapless U(1) gauge modes in the;nonmagnetic phase. In the Z(2) liquid phase of the triangular lattice,;we identify the topological degeneracy as well as vison states.;DOI:10.1103/PhysRevB.86.245132;2;0;0;0;2;1098-0121;WOS:000312833600001;;;J;Mokhlespour, Salman;Haverkort, J. E. M.;Slepyan, Gregory;Maksimenko, Sergey;Hoffmann, A.;Collective spontaneous emission in coupled quantum dots: Physical;mechanism of quantum nanoantenna;PHYSICAL REVIEW B;86;24;245322;10.1103/PhysRevB.86.245322;DEC 27 2012;2012;We investigate the collective spontaneous emission in a system of two;identical quantum dots (QDs) strongly coupled through the dipole-dipole;(d-d) interaction. The QDs are modeled as two-level quantum objects,;while the d-d interaction is described as the exchange of a virtual;photon through the photonic reservoir. The master equation approach is;used in the analysis. The main attention is focused on antenna;characteristics of the two-QD system-the radiation intensity dependence;on the meridian and azimuthal angles of observation. We show that the;radiation pattern of such a system is nonstationary and its temporal;behavior depends on the initial quantum state. In particular, for;entangled initial states the radiative pattern exhibits oscillations on;the frequency which corresponds to the d-d interaction energy. We also;analyze spectral properties of the directional diagram. The comparison;of radiation patterns is carried out for two QDs and two classical;dipoles. The concept of quantum nanoantenna is proposed based on;collective spontaneous emission in QD ensembles.;DOI:10.1103/PhysRevB.86.245322;Maksimenko, Sergey/F-1888-2011;Maksimenko, Sergey/0000-0002-8271-0449;8;1;0;0;8;1098-0121;WOS:000312833600002;;;J;Muravev, V. M.;Gusikhin, P. A.;Tsydynzhapov, G. E.;Fortunatov, A. A.;Kukushkin, I. V.;Spectroscopy of terahertz radiation using high-Q photonic crystal;microcavities;PHYSICAL REVIEW B;86;23;235144;10.1103/PhysRevB.86.235144;DEC 27 2012;2012;We report observation of high-Q resonance in the photoresponse of a;detector embedded in the 2D photonic crystal slab (PCS) microcavity;illuminated by terahertz radiation. The detector and PCS are fabricated;from a single GaAs wafer in a unified process. The influence of the;period of PCS lattice, microcavity geometry, and detector location on;the resonant photoresponse is studied. The resonance is found to;originate from coupling of the fundamental PCS microcavity photon mode;to the detector. The phenomenon can be exploited to devise a;spectrometer-on-a-chip for terahertz range. DOI:;10.1103/PhysRevB.86.235144 PACS number(s): 42.50.-p, 42.70.Qs, 42.79.-e,;73.21.-b;0;0;0;0;0;1098-0121;WOS:000312832900001;;;J;Reguzzoni, M.;Fasolino, A.;Molinari, E.;Righi, M. C.;Potential energy surface for graphene on graphene: Ab initio derivation,;analytical description, and microscopic interpretation;PHYSICAL REVIEW B;86;24;245434;10.1103/PhysRevB.86.245434;DEC 27 2012;2012;We derive an analytical expression that describes the interaction energy;between two graphene layers identically oriented as a function of the;relative lateral and vertical positions, in excellent agreement with;first principles calculations. Thanks to its formal simplicity, the;proposed model allows for an immediate interpretation of the;interactions, in particular of the potential corrugation. This last;quantity plays a crucial role in determining the intrinsic resistance to;interlayer sliding and its increase upon compression influences the;frictional behavior under load. We show that, for these weakly adherent;layers, the corrugation possesses the same nature and z dependence of;Pauli repulsion. We investigate the microscopic origin of these;phenomena by analyzing the electronic charge distribution: We observe a;pressure-induced charge transfer from the interlayer region toward the;near-layer regions, with a much more consistent depletion of charge;occurring for the AA stacking than for the AB stacking of the two;layers. DOI:10.1103/PhysRevB.86.245434;8;0;0;0;8;1098-0121;WOS:000312833600003;;;J;Sonin, E. B.;Reply to "Comment on 'Symmetry of Kelvin-wave dynamics and the;Kelvin-wave cascade in the T=0 superfluid turbulence'";PHYSICAL REVIEW B;86;22;226502;10.1103/PhysRevB.86.226502;DEC 27 2012;2012;The goal of the Comment by L'vov and Nazarenko is to refute my;perviously published criticism of their mechanism of the Kelvin-wave;cascade. It is important, however, that, in their Comment, L'vov and;Nazarenko admitted that the Hamiltonian, from which they derived their;mechanism, is not tilt invariant. This provides full ammunition to their;critics, who believe that their mechanism is in conflict with the tilt;symmetry of the Kelvin-wave dynamics and, therefore, is not valid for;the real isotropic world. DOI: 10.1103/PhysRevB.86.226502;3;1;0;0;3;1098-0121;WOS:000312831900004;;;J;Swaminathan, Narasimhan;Morgan, Dane;Szlufarska, Izabela;Role of recombination kinetics and grain size in radiation-induced;amorphization;PHYSICAL REVIEW B;86;21;214110;10.1103/PhysRevB.86.214110;DEC 27 2012;2012;Using a rate theory model for a generic one-component material, we;investigated interactions between grain size and recombination kinetics;of radiation-induced defects. Specifically, by varying parametrically;nondimensional kinetic barriers for defect diffusion and recombination,;we determined the effect of these parameters on the shape of the dose to;amorphization versus temperature curves. We found that whether grain;refinement to the nanometer regime improves or deteriorates radiation;resistance of a material depends on the barriers to defect migration and;recombination, as well as on the temperature for the intended use of the;material. We show that the effects of recombination barriers and of;grain refinement can be coupled to each other to produce a phenomenon of;interstitial starvation. In interstitial starvation, a significant;number of interstitials annihilate at the grain boundary, leaving behind;unrecombined vacancies, which in turn amorphize the material. The same;rate theory model with material-specific parameters was used to predict;the grain-size dependence of the critical amorphization temperature in;SiC. Parameters for the SiC model were taken from ab initio;calculations. We find that the fine-grained SiC has a lower radiation;resistance when compared to the polycrystalline SiC due to the presence;of high-energy barrier for recombination of carbon Frenkel pairs and due;to the interstitial starvation phenomenon. DOI:;10.1103/PhysRevB.86.214110;Morgan, Dane/B-7972-2008;Morgan, Dane/0000-0002-4911-0046;5;0;0;0;5;1098-0121;WOS:000312830600001;;;J;Ahart, Muhtar;Sinogeikin, Stanislav;Shebanova, Olga;Ikuta, Daijo;Ye, Zuo-Guang;Mao, Ho-kwang;Cohen, R. E.;Hemley, Russell J.;Pressure dependence of the monoclinic phase in;(1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) solid solutions;PHYSICAL REVIEW B;86;22;224111;10.1103/PhysRevB.86.224111;DEC 26 2012;2012;We combine high-pressure x-ray diffraction, high-pressure Raman;scattering, and optical microscopy to investigate a series of (1 -;x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMN-xPT) solid solutions (x = 0.2, 0.3,;0.33, 0.35, 0.37, 0.4) in diamond anvil cells up to 20 GPa at 300 K. The;Raman spectra show a peak centered at 380 cm(-1) starting above 6 GPa;for all samples, in agreement with previous observations. X-ray;diffraction measurements are consistent with this spectral change;indicating a structural phase transition; we find that the triplet at;the pseudocubic (220) Bragg peak merges into a doublet above 6 GPa. Our;results indicate that the morphotropic phase boundary region (x = 0.33 -;0.37) with the presence of monoclinic symmetry persists up to 7 GPa. The;pressure dependence of ferroelectric domains in PMN-0.32PT single;crystals was observed using a polarizing optical microscope. The domain;wall density decreases with pressure and the domains disappear at a;modest pressure of 3 GPa. We propose a pressure-composition phase;diagram for PMN-xPT solid solutions. DOI: 10.1103/PhysRevB.86.224111;Cohen, Ronald/B-3784-2010;Cohen, Ronald/0000-0001-5871-2359;2;0;0;0;2;1098-0121;WOS:000312831800006;;;J;Akrap, Ana;Tran, Michael;Ubaldini, Alberto;Teyssier, Jeremie;Giannini, Enrico;van der Marel, Dirk;Lerch, Philippe;Homes, Christopher C.;Optical properties of Bi2Te2Se at ambient and high pressures;PHYSICAL REVIEW B;86;23;235207;10.1103/PhysRevB.86.235207;DEC 26 2012;2012;The temperature dependence of the complex optical properties of the;three-dimensional topological insulator Bi2Te2Se is reported for light;polarized in the a-b planes at ambient pressure, as well as the effects;of pressure at room temperature. This material displays a semiconducting;character with a bulk optical gap of E-g similar or equal to 300 meV at;295 K. In addition to the two expected infrared-active vibrations;observed in the planes, there is an additional fine structure that is;attributed to either the removal of degeneracy or the activation of;Raman modes due to disorder. A strong impurity band located at similar;or equal to 200 cm(-1) is also observed. At and just above the optical;gap, several interband absorptions are found to show a strong;temperature and pressure dependence. As the temperature is lowered these;features increase in strength and harden. The application of pressure;leads to a very abrupt closing of the gap above 8 GPa, and strongly;modifies the interband absorptions in the midinfrared spectral range.;While ab initio calculations fail to predict the collapse of the gap,;they do successfully describe the size of the band gap at ambient;pressure, and the magnitude and shape of the optical conductivity. DOI:;10.1103/PhysRevB.86.235207;Teyssier, Jeremie/A-6867-2013; Akrap, Ana/G-1409-2013;Akrap, Ana/0000-0003-4493-5273;10;0;0;0;10;1098-0121;WOS:000312832600007;;;J;Andersen, Kirsten;Jacobsen, Karsten W.;Thygesen, Kristian S.;Spatially resolved quantum plasmon modes in metallic nano-films from;first-principles;PHYSICAL REVIEW B;86;24;245129;10.1103/PhysRevB.86.245129;DEC 26 2012;2012;Electron energy loss spectroscopy (EELS) can be used to probe plasmon;excitations in nanostructured materials with atomic-scale spatial;resolution. For structures smaller than a few nanometers, quantum;effects are expected to be important, limiting the validity of widely;used semiclassical response models. Here we present a method to identify;and compute spatially resolved plasmon modes from first-principles based;on a spectral analysis of the dynamical dielectric function. As an;example we calculate the plasmon modes of 0.5 to 4 nm thick Na films and;find that they can be classified as (conventional) surface modes,;subsurface modes, and a discrete set of bulk modes resembling standing;waves across the film. We find clear effects of both quantum confinement;and nonlocal response. The quantum plasmon modes provide an intuitive;picture of collective excitations of confined electron systems and offer;a clear interpretation of spatially resolved EELS spectra. DOI:;10.1103/PhysRevB.86.245129;Jacobsen, Karsten/B-3602-2009; Thygesen, Kristian /B-1062-2011;6;0;0;0;6;1098-0121;WOS:000312833400007;;;J;Baker, A. M. R.;Alexander-Webber, J. A.;Altebaeumer, T.;Janssen, T. J. B. M.;Tzalenchuk, A.;Lara-Avila, S.;Kubatkin, S.;Yakimova, R.;Lin, C. -T.;Li, L. -J.;Nicholas, R. J.;Weak localization scattering lengths in epitaxial, and CVD graphene;PHYSICAL REVIEW B;86;23;235441;10.1103/PhysRevB.86.235441;DEC 26 2012;2012;Weak localization in graphene is studied as a function of carrier;density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2);using devices produced by epitaxial growth onto SiC and CVD growth on;thin metal film. The magnetic field dependent weak localization is found;to be well fitted by theory, which is then used to analyze the;dependence of the scattering lengths L-phi, L-i, and L-* on carrier;density. We find no significant carrier dependence for L-phi, a weak;decrease for L-i with increasing carrier density just beyond a large;standard error, and a n(-1/4) dependence for L-*. We demonstrate that;currents as low as 0.01 nA are required in smaller devices to avoid;hot-electron artifacts in measurements of the quantum corrections to;conductivity. DOI: 10.1103/PhysRevB.86.235441;Lara-Avila, Samuel/B-4878-2013; Lin, Cheng-Te/D-5203-2011; Materials, Semiconductor/I-6323-2013;Lara-Avila, Samuel/0000-0002-8331-718X; Lin,;Cheng-Te/0000-0002-7090-9610;;11;0;0;0;11;1098-0121;WOS:000312832600015;;;J;Bergeret, F. S.;Verso, A.;Volkov, A. F.;Electronic transport through ferromagnetic and superconducting junctions;with spin-filter tunneling barriers;PHYSICAL REVIEW B;86;21;214516;10.1103/PhysRevB.86.214516;DEC 26 2012;2012;We present a theoretical study of the quasiparticle and subgap;conductance of generic X/I-sf/S-M junctions with a spin-filter barrier;I-sf, where X is either a normal N or a ferromagnetic metal F and S-M is;a superconductor with a built-in exchange field. Our study is based on;the tunneling Hamiltonian and the Green's-function technique. First, we;focus on the quasiparticle transport, both above and below the;superconducting critical temperature. We obtain a general expression for;the tunneling conductance which is valid for arbitrary values of the;exchange field and arbitrary magnetization directions in the electrodes;and in the spin-filter barrier. In the second part, we consider the;subgap conductance of a N/I-sf/S junction, where S is a conventional;superconductor. In order to account for the spin-filter effect at;interfaces, we heuristically derive boundary conditions for the;quasiclassical Green's functions. With the help of these boundary;conditions, we show that the proximity effect and the subgap conductance;are suppressed by spin filtering in a N/I-sf/S junction. Our work;provides useful tools for the study of spin-polarized transport in;hybrid structures both in the normal and in the superconducting state.;DOI: 10.1103/PhysRevB.86.214516;CSIC-UPV/EHU, CFM/F-4867-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;7;1;0;0;7;1098-0121;WOS:000312830400009;;;J;Beugnot, Jean-Charles;Laude, Vincent;Electrostriction and guidance of acoustic phonons in optical fibers;PHYSICAL REVIEW B;86;22;224304;10.1103/PhysRevB.86.224304;DEC 26 2012;2012;We investigate the generation of acoustic phonons in optical fibers via;electrostriction from coherent optical waves. Solving the elastodynamic;equation subject to the electrostrictive force, we are able to reproduce;the experimental spectra found in standard and photonic crystal fibers.;We discuss the two important practical cases of forward interaction,;dominated by elastic resonances of the fiber, and backward interaction,;for which an efficient mechanism of phonon guidance is found. The last;result describes the formation of the coherent phonon beam involved in;stimulated Brillouin scattering. DOI: 10.1103/PhysRevB.86.224304;Laude, Vincent/C-4484-2008;Laude, Vincent/0000-0001-8930-8797;3;0;0;0;3;1098-0121;WOS:000312831800007;;;J;Blanc, Nils;Coraux, Johann;Vo-Van, Chi;N'Diaye, Alpha T.;Geaymond, Olivier;Renaud, Gilles;Local deformations and incommensurability of high-quality epitaxial;graphene on a weakly interacting transition metal;PHYSICAL REVIEW B;86;23;235439;10.1103/PhysRevB.86.235439;DEC 26 2012;2012;We investigate the fine structure of graphene on iridium, which is a;model for graphene weakly interacting with a transition-metal substrate.;Even the highest-quality epitaxial graphene displays tiny imperfections,;i.e., small biaxial strains of similar to 0.3%, rotations of similar to;0.5 degrees, and shears over distances of similar to 100 nm, and is;found incommensurate, as revealed by x-ray diffraction and scanning;tunneling microscopy. These structural variations are mostly induced by;the increase of the lattice parameter mismatch when cooling the sample;from the graphene preparation temperature to the measurement;temperature. Although graphene weakly interacts with iridium, its;thermal expansion is found to be positive, contrary to free-standing;graphene. The structure of graphene and its variations is very sensitive;to the preparation conditions. All these effects are consistent with;initial growth and subsequent pinning of graphene at steps. DOI:;10.1103/PhysRevB.86.235439;Coraux, Johann/A-7897-2008;5;0;0;0;5;1098-0121;WOS:000312832600013;;;J;Blomeier, S.;Candeloro, P.;Hillebrands, B.;Reuscher, B.;Brodyanski, A.;Kopnarski, M.;Micromagnetism and magnetization reversal of embedded ferromagnetic;elements (vol 74, 184405, 2006);PHYSICAL REVIEW B;86;21;219904;10.1103/PhysRevB.86.219904;DEC 26 2012;2012;Hillebrands, Burkard/C-6242-2008;Hillebrands, Burkard/0000-0001-8910-0355;0;0;0;0;0;1098-0121;WOS:000312830400011;;;J;Bud'ko, Sergey L.;Liu, Yong;Lograsso, Thomas A.;Canfield, Paul C.;Hydrostatic and uniaxial pressure dependence of superconducting;transition temperature of KFe2As2 single crystals;PHYSICAL REVIEW B;86;22;224514;10.1103/PhysRevB.86.224514;DEC 26 2012;2012;We present heat capacity, c-axis thermal expansion and;pressure-dependent, low-field, temperature-dependent magnetization for;pressures up to similar to 12 kbar, data for KFe2As2 single crystals.;T-c decreases under pressure with dT(c)/dP approximate to -0.10 K/kbar.;The inferred uniaxial, c-axis, pressure derivative is positive,;dT(c)/dp(c) approximate to 0.11 K/kbar. The data are analyzed in;comparison with those for overdoped Fe-based superconductors. Arguments;are presented that superconductivity in KFe2As2 may be different from;the other overdoped, Fe-based materials in the 122 family. DOI:;10.1103/PhysRevB.86.224514;Canfield, Paul/H-2698-2014;9;0;0;0;9;1098-0121;WOS:000312831800013;;;J;Bulaevskii, Lev N.;Lin, Shi-Zeng;Self-induced pinning of vortices in the presence of ac driving force in;magnetic superconductors;PHYSICAL REVIEW B;86;22;224513;10.1103/PhysRevB.86.224513;DEC 26 2012;2012;We derive the response of the magnetic superconductors in the vortex;state to the ac Lorentz force, F-L (t) = F-ac sin(omega t), taking into;account the interaction of vortices with the magnetic moments described;by the relaxation dynamics (polaronic effect). At low amplitudes of the;driving force F-ac the dissipation in the system is suppressed due to;the enhancement of the effective viscosity at low frequencies and due to;formation of the magnetic pinning at high frequencies omega. In the;adiabatic limit with low frequencies omega and high amplitude of the;driving force F-ac, the vortex and magnetic polarization form a vortex;polaron when F-L (t) is small. When F-L increases, the vortex polaron;accelerates and at a threshold driving force, the vortex polaron;dissociates and the motion of vortex and the relaxation of magnetization;are decoupled. When F-L decreases, the vortex is retrapped by the;background of remnant magnetization and they again form vortex polaron.;This process repeats when F-L (t) increases in the opposite direction.;Remarkably, after dissociation, decoupled vortices move in the periodic;potential induced by magnetization which remains for some periods of;time due to retardation after the decoupling. At this stage vortices;oscillate with high frequencies determined by the Lorentz force at the;moment of dissociation. We derive also the creep rate of vortices and;show that magnetic moments suppress creep rate. DOI:;10.1103/PhysRevB.86.224513;Lin, Shi-Zeng/B-2906-2008;Lin, Shi-Zeng/0000-0002-4368-5244;3;0;0;0;3;1098-0121;WOS:000312831800012;;;J;Butler, C. A. M.;Hobson, P. A.;Hibbins, A. P.;Sambles, J. R.;Resonant microwave transmission from a double layer of subwavelength;metal square arrays: Evanescent handedness;PHYSICAL REVIEW B;86;24;241109;10.1103/PhysRevB.86.241109;DEC 26 2012;2012;Adouble layer of identical subwavelengthmetal patch arrays is;experimentally shown to be electromagnetically chiral due to the;evanescent coupling of the near fields between nonchiral layers-it;exhibits "evanescent handedness." Despite each layer being intrinsically;isotropic in the plane with four mirror planes orthogonal to the plane;of the structure, circular dichroism, leading to significant;polarization rotation, is found in the resonant microwave transmission;for any incident linear polarization. DOI: 10.1103/PhysRevB.86.241109;1;0;0;0;1;1098-0121;WOS:000312833400002;;;J;Calder, S.;Cao, G. -X.;Lumsden, M. D.;Kim, J. W.;Gai, Z.;Sales, B. C.;Mandrus, D.;Christianson, A. D.;Magnetic structural change of Sr2IrO4 upon Mn doping;PHYSICAL REVIEW B;86;22;220403;10.1103/PhysRevB.86.220403;DEC 26 2012;2012;The layered 5d transition-metal oxide Sr2IrO4 has been shown to host a;novel J(eff) = 1/2 Mott spin-orbit insulating state with;antiferromagnetic ordering, leading to comparisons with the layered;cuprates. Here we study the effect of substituting Mn for Ir in single;crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk;measurements and resonant x-ray and neutron scattering. We observe a new;long-range magnetic structure emerge upon doping through a reordering of;the spins from the basal plane to the c axis with a reduced ordering;temperature compared to Sr2IrO4 . The strong enhancement of the magnetic;x-ray scattering intensity at the L-3 edge relative to the L-2 edge;indicates that the J(eff) = 1/2 state is robust and capable of hosting a;variety of ground states. DOI: 10.1103/PhysRevB.86.220403;Gai, Zheng/B-5327-2012; Mandrus, David/H-3090-2014;Gai, Zheng/0000-0002-6099-4559;;9;1;0;0;9;1098-0121;WOS:000312831800002;;;J;Camjayi, Alberto;Arrachea, Liliana;Conductance of a quantum dot in the Kondo regime connected to dirty;wires;PHYSICAL REVIEW B;86;23;235143;10.1103/PhysRevB.86.235143;DEC 26 2012;2012;We study the transport behavior induced by a small bias voltage through;a quantum dot connected to one-channel disordered wires by means of a;quantum Monte Carlo method. We model the quantum dot by the;Hubbard-Anderson impurity and the wires by the one-dimensional Anderson;model with diagonal disorder within a length. We present a complete;description of the probability distribution function of the conductance;within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143;1;0;0;0;1;1098-0121;WOS:000312832600005;;;J;Chen, Ying;Liu, Rui;Cai, Min;Shinar, Ruth;Shinar, Joseph;Extremely strong room-temperature transient photocurrent-detected;magnetic resonance in organic devices;PHYSICAL REVIEW B;86;23;235442;10.1103/PhysRevB.86.235442;DEC 26 2012;2012;An extremely strong room-temperature photocurrent- (PC- or I-PC-);detected magnetic resonance (PCDMR) that elucidates transport and;trapping phenomena in organic devices, in particular solar cells, is;described. When monitoring the transient PCDMR in indium tin oxide;(ITO)/poly(2-methoxy-5-(2'-ethyl)-hexoxy-1,4-phenylenevinylene);(MEH-PPV)/Al devices, where the MEH-PPV film was baked overnight at 100;degrees C in O-2, it is observed that | Delta I-PC/I-PC| peaks at values;>> 1, where Delta I-PC is the change in I-PC induced by magnetic;resonance conditions. Importantly, Delta I-PC and I-PC are of different;origin. The mechanism most likely responsible for this effect is the;spin-dependent formation of spinless bipolarons adjacent to negatively;charged deep traps, apparently induced in particular by oxygen centers,;to form trions. DOI: 10.1103/PhysRevB.86.235442;Cai, Min/A-2678-2014;1;0;0;0;1;1098-0121;WOS:000312832600016;;;J;Cho, Gil Young;Bardarson, Jens H.;Lu, Yuan-Ming;Moore, Joel E.;Superconductivity of doped Weyl semimetals: Finite-momentum pairing and;electronic analog of the He-3-A phase;PHYSICAL REVIEW B;86;21;214514;10.1103/PhysRevB.86.214514;DEC 26 2012;2012;We study superconducting states of doped inversion-symmetric Weyl;semimetals. Specifically, we consider a lattice model realizing a Weyl;semimetal with an inversion symmetry and study the superconducting;instability in the presence of a short-ranged attractive interaction.;With a phonon-mediated attractive interaction, we find two competing;states: a fully gapped finite-momentum Fulde-Ferrell-Larkin-Ovchinnikov;pairing state and a nodal even-parity pairing state. We show that, in a;BCS-type approximation, the finite-momentum pairing state is;energetically favored over the usual even-parity paired state and is;robust against weak disorder. Although energetically unfavorable, the;even-parity pairing state provides an electronic analog of the He-3-A;phase in that the nodes of the even-parity state carry nontrivial;winding numbers and therefore support a surface flat band. We briefly;discuss other possible superconducting states that may be realized in;Weyl semimetals. DOI: 10.1103/PhysRevB.86.214514;12;0;0;0;12;1098-0121;WOS:000312830400007;;;J;Duivenvoorden, Kasper;Quella, Thomas;Discriminating string order parameter for topological phases of gapped;SU(N) spin chains;PHYSICAL REVIEW B;86;23;235142;10.1103/PhysRevB.86.235142;DEC 26 2012;2012;One-dimensional gapped spin chains with symmetry PSU(N) = SU(N)/Z(N) are;known to possess N different topological phases. In this paper, we;introduce a nonlocal string order parameter which characterizes each of;these N phases unambiguously. Numerics confirm that our order parameter;allows one to extract a quantized topological invariant from a given;nondegenerate gapped ground state wave function. Discontinuous jumps in;the discrete topological order that arise when varying physical;couplings in the Hamiltonian may be used to detect quantum phase;transitions between different topological phases. DOI:;10.1103/PhysRevB.86.235142;Quella, Thomas/A-2630-2012;Quella, Thomas/0000-0002-5441-4124;6;0;0;0;6;1098-0121;WOS:000312832600004;;;J;Gao Xianlong;Chen, A-Hai;Tokatly, I. V.;Kurth, S.;Lattice density functional theory at finite temperature with strongly;density-dependent exchange-correlation potentials;PHYSICAL REVIEW B;86;23;235139;10.1103/PhysRevB.86.235139;DEC 26 2012;2012;The derivative discontinuity of the exchange-correlation (xc) energy at;an integer particle number is a property of the exact, unknown xc;functional of density functional theory (DFT) which is absent in many;popular local and semilocal approximations. In lattice DFT,;approximations exist which exhibit a discontinuity in the xc potential;at half-filling. However, due to convergence problems of the Kohn-Sham;(KS) self-consistency cycle, the use of these functionals is mostly;restricted to situations where the local density is away from;half-filling. Here a numerical scheme for the self-consistent solution;of the lattice KS Hamiltonian with a local xc potential with rapid (or;quasidiscontinuous) density dependence is suggested. The problem is;formulated in terms of finite-temperature DFT where the discontinuity in;the xc potential emerges naturally in the limit of zero temperature. A;simple parametrization is suggested for the xc potential of the uniform;one-dimensional (1D) Hubbard model at finite temperature which is;obtained from the solution of the thermodynamic Bethe ansatz. The;feasibility of the numerical scheme is demonstrated by application to a;model of fermionic atoms in a harmonic trap. The corresponding density;profile exhibits a plateau of integer occupation at low temperatures;which melts away for higher temperatures. DOI:;10.1103/PhysRevB.86.235139;Tokatly, Ilya/D-9554-2011; Chen, Ahai/D-6169-2013; Xianlong, Gao/K-8744-2012;Tokatly, Ilya/0000-0001-6288-0689; Xianlong, Gao/0000-0001-6914-3163;4;0;0;0;4;1098-0121;WOS:000312832600001;;;J;Hanson, George W.;Forati, Ebrahim;Linz, Whitney;Yakovlev, Alexander B.;Excitation of terahertz surface plasmons on graphene surfaces by an;elementary dipole and quantum emitter: Strong electrodynamic effect of;dielectric support;PHYSICAL REVIEW B;86;23;235440;10.1103/PhysRevB.86.235440;DEC 26 2012;2012;The excitation of transverse magnetic (TM) surface plasmons by a point;dipole in the vicinity of a multilayered graphene/dielectric system is;examined. It was previously shown that the surface plasmon (SP) excited;by a vertical dipole on an isolated graphene sheet exhibits a strong;excitation peak in the THz region; here we show that, in the presence of;a finite-thickness dielectric support layer such as SiO2, considerable;spectral content is transferred to a second (perturbed dielectric slab);mode, greatly decreasing and redshifting the excitation peak. The;presence of a Si half-space also diminishes the excitation strength, but;for graphene on top of SiO2-Si the presence of the SiO2 layer creates a;spacer restoring the excitation peak. A two-level quantum emitter is;also considered, where it is shown that the addition of a thin;dielectric support slab and SiO2-Si geometries affects the spontaneous;decay rate in a manner similar to the classical dipole SP excitation;peak. DOI: 10.1103/PhysRevB.86.235440;10;0;0;0;10;1098-0121;WOS:000312832600014;;;J;Hillier, N. J.;Foroozani, N.;Zocco, D. A.;Hamlin, J. J.;Baumbach, R. E.;Lum, I. K.;Maple, M. B.;Schilling, J. S.;Intrinsic dependence of T-c on hydrostatic (He-gas) pressure for;superconducting LaFePO, PrFePO, and NdFePO single crystals;PHYSICAL REVIEW B;86;21;214517;10.1103/PhysRevB.86.214517;DEC 26 2012;2012;Since their discovery in 2008, the Fe-based superconductors have;attracted a great deal of interest. Regrettably, themechanism(s);responsible for the superconductivity has yet to be unequivocally;identified. High pressure is an important variable since its application;moderates the pairing interaction. Thus far, the LnFePO (Ln = La, Pr,;Nd, Sm, Gd) family of superconductors has received relatively little;attention. Early high-pressure studies on LaFePO found that T-c;initially increased with pressure before passing through a maximum at;higher pressures. The present studies on both polycrystalline and;single-crystalline LaFePO, PrFePO, and NdFePO utilize the most;hydrostatic pressure medium available, i.e., dense He. Surprisingly, for;all samples, T-c is found to initially decrease rapidly with pressure at;the rate dT(c)/dP similar or equal to -2 to -3K/GPa. Less hydrostatic;pressure media thus appear to enhance the value of T-c in these;materials. These results give yet further evidence that the;superconducting state in Fe-based superconductors is extraordinarly;sensitive to lattice strain. DOI: 10.1103/PhysRevB.86.214517;Foroozani, Neda/H-2720-2013; Zocco, Diego/O-3440-2014;2;0;0;0;2;1098-0121;WOS:000312830400010;;;J;Hinuma, Yoyo;Oba, Fumiyasu;Kumagai, Yu;Tanaka, Isao;Ionization potentials of (112) and (11(2)over-bar) facet surfaces of;CuInSe2 and CuGaSe2;PHYSICAL REVIEW B;86;24;245433;10.1103/PhysRevB.86.245433;DEC 26 2012;2012;The ionization potentials of the faceted and nonfaceted (110) surfaces;of CuInSe2 (CIS) and CuGaSe2 (CGS), which are key components of;CuIn1-xGaxSe2 (CIGS) thin-film solar cells, are investigated using;first-principles calculations based on a hybrid Hartree-Fock density;functional theory approach. Slab models of the chalcopyrite (110);surface with both (112) and (11 (2) over bar) facets on each surface of;the slab are employed. Surface energy evaluations point out that two;types of faceted surfaces with point defects, namely a combination of;Cu-In (Cu-Ga) and In-Cu (Ga-Cu) antisites and a combination of Cu;vacancies and In-Cu (Ga-Cu) antisites, are the most stable depending on;the chemical potentials. The ionization potentials are evaluated with;two definitions: One highly sensitive to and the other less sensitive to;localized surface states. The latter varies by 0.4 eV in CIS and 0.5 eV;in CGS with the surface structure. The ionization potentials are reduced;by 0.2 eV for faceted surfaces with Cu-In (Cu-Ga) and In-Cu (Ga-Cu);antisites when the effects of the localized surface states are;considered. The values of both ionization potentials are similar between;CIS and CGS with a difference of about 0.1 eV for the most stable;surface structures. DOI: 10.1103/PhysRevB.86.245433;Kumagai, Yu/H-8104-2012; Tanaka, Isao/B-5941-2009; Oba, Fumiyasu/J-9723-2014;9;0;1;0;9;1098-0121;WOS:000312833400018;;;J;Hortamani, M.;Wiesendanger, R.;Role of hybridization in the Rashba splitting of noble metal monolayers;on W(110);PHYSICAL REVIEW B;86;23;235437;10.1103/PhysRevB.86.235437;DEC 26 2012;2012;In contradiction to the nature of the spin-orbit driven Rashba splitting;of surface states which increases with atomic number, Shikin et al.;[Phys. Rev. Lett. 100, 057601 (2008)] have observed that the size of the;splitting in Au overlayers on W(110) is smaller than for Ag overlayers.;In the framework of first-principle density functional theory, we have;studied the origin of the Rashba splitting at Au/Ag overlayers on the;W(110) surface. We show how the asymmetric behavior of the wave function;in the vicinity of the surface atom nucleus, in addition to the strength;of the nuclear potential gradient, plays a crucial role for the size of;the splitting. The influence of the electronic structure and spin;dependent hybridization on the Rashba splitting is discussed. The;asymmetric behavior of the surface wave function originates from the;surface-interface sp-d hybridization. We find that a spin dependent;hybridization in the Ag overlayer influences strongly the size of the;Rashba splitting. DOI: 10.1103/PhysRevB.86.235437;1;0;0;0;1;1098-0121;WOS:000312832600011;;;J;Hu, Xiang;Rueegg, Andreas;Fiete, Gregory A.;Topological phases in layered pyrochlore oxide thin films along the;[111] direction;PHYSICAL REVIEW B;86;23;235141;10.1103/PhysRevB.86.235141;DEC 26 2012;2012;We theoretically study a multiband Hubbard model of pyrochlore oxides of;the form A(2)B(2)O(7), where B is a heavy transition metal ion with;strong spin-orbit coupling, in a thin-film geometry orientated along the;[111] direction. Along this direction, the pyrochlore lattice consists;of alternating kagome and triangular lattice planes of B ions. We;consider a single kagome layer, a bilayer, and the two different;trilayers. As a function of the strength of the spin-orbit coupling, the;direct and indirect d-orbital hopping, and the band filling, we identify;a number of scenarios where a noninteracting time-reversal-invariant;Z(2) topological phase is expected and we suggest some candidate;materials. We study the interactions in the half-filled d shell within;Hartree-Fock theory and identify parameter regimes where a zero magnetic;field Chern insulator with Chern number +/- 1 can be found. The most;promising geometries for topological phases appear to be the bilayer;which supports both a Z(2) topological insulator and a Chern insulator,;and the triangular-kagome-triangular trilayer which supports a;relatively robust Chern insulator phase. DOI: 10.1103/PhysRevB.86.235141;Ruegg, Andreas/B-4498-2010;12;0;0;0;12;1098-0121;WOS:000312832600003;;;J;Janotti, A.;Bjaalie, L.;Gordon, L.;Van de Walle, C. G.;Controlling the density of the two-dimensional electron gas at the;SrTiO3/LaAlO3 interface;PHYSICAL REVIEW B;86;24;241108;10.1103/PhysRevB.86.241108;DEC 26 2012;2012;The polar discontinuity at the SrTiO3/LaAlO3 interface (STO/LAO) can in;principle sustain an electron density of 3.3 x 10(14) cm(-2) (0.5;electrons per unit cell). However, experimentally observed densities are;more than an order of magnitude lower. Using a combination of;first-principles and Schrodinger-Poisson simulations we show that the;problem lies in the asymmetric nature of the structure, i.e., the;inability to form a second LAO/STO interface that is a mirror image of;the first, or to fully passivate the LAO surface. Our insights apply to;oxide interfaces in general, explaining for instance why the;SrTiO3/GdTiO3 interface has been found to exhibit the full density of;3.3 x 10(14) cm(-2). DOI: 10.1103/PhysRevB.86.241108;Janotti, Anderson/F-1773-2011; Van de Walle, Chris/A-6623-2012;Janotti, Anderson/0000-0001-5028-8338; Van de Walle,;Chris/0000-0002-4212-5990;11;0;0;0;11;1098-0121;WOS:000312833400001;;;J;Kim, Changsoo;Jo, Euna;Kang, Byeongki;Kwon, Sangil;Lee, Soonchil;Shim, Jeong Hyun;Suzuki, Takehiko;Katsufuji, Takuro;Giant magnetic anisotropy in Mn3O4 investigated by Mn-55(2+) and;Mn-55(3+) NMR;PHYSICAL REVIEW B;86;22;224420;10.1103/PhysRevB.86.224420;DEC 26 2012;2012;In Mn3O4, the magnetization along the c axis is different from that;along the ab plane even in the strong field of 30 T. To investigate the;origin of the huge magnetic anisotropy, Mn2+ and Mn3+ nuclear magnetic;resonance spectra were measured in the 7-T magnetic field. The canting;angle of the magnetic moments was estimated for various directions of;field by rotating a single-crystalline Mn3O4 sample. One of the main;results is that Mn3+ moments lie nearly in the ab plane in the external;field perpendicular to the plane, meaning that the macroscopic magnetic;anisotropy of Mn3O4 originates from the magnetic anisotropy of Mn3+ in;the ab plane. The anisotropy field is estimated to be about 65 T. It is;obvious that the Yafet-Kittel structure made of Mn2+ and Mn3+ spins lies;in the ab plane due to this huge magnetic anisotropy, contrary to the;previous reports. By the least-squares fit of the canting angle data for;various field directions to a simple model, we obtained that J(BB) =;1.88J(AB) - 0.09 meV and K-A = -14.7J(AB) + 2.0 meV, where J(AB), J(BB),;and K-A are the exchange interaction constants between Mn2+ moments,;Mn2+ and Mn3+ moments, and an anisotropy constant of Mn2+, respectively.;DOI: 10.1103/PhysRevB.86.224420;Suzuki, Takehito/B-3038-2013; Lee, Soonchil/C-1963-2011;3;0;0;0;3;1098-0121;WOS:000312831800010;;;J;Kimber, Robin G. E.;Wright, Edward N.;O'Kane, Simon E. J.;Walker, Alison B.;Blakesley, James C.;Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device;characteristics;PHYSICAL REVIEW B;86;23;235206;10.1103/PhysRevB.86.235206;DEC 26 2012;2012;Measured mobility and current-voltage characteristics of single layer;and photovoltaic (PV) devices composed of;poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4;-phenylene)diamine} (PFB) and;poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been;reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC);approach. Our aim is to show how to avoid the uncertainties common in;electrical transport models arising from the need to fit a large number;of parameters when little information is available, for example, a;single current-voltage curve. Here, simulation parameters are derived;from a series of measurements using a self-consistent "building-blocks";approach, starting from data on the simplest systems. We found that site;energies show disorder and that correlations in the site energies and a;distribution of deep traps must be included in order to reproduce;measured charge mobility-field curves at low charge densities in bulk;PFB and F8BT. The parameter set from the mobility-field curves;reproduces the unipolar current in single layers of PFB and F8BT and;allows us to deduce charge injection barriers. Finally, by combining;these disorder descriptions and injection barriers with an optical;model, the external quantum efficiency and current densities of blend;and bilayer organic PV devices can be successfully reproduced across a;voltage range encompassing reverse and forward bias, with the;recombination rate the only parameter to be fitted, found to be 1 x;10(7) s(-1). These findings demonstrate an approach that removes some of;the arbitrariness present in transport models of organic devices, which;validates the KMC as an accurate description of organic optoelectronic;systems, and provides information on the microscopic origins of the;device behavior. DOI: 10.1103PhysRevB.86.235206;20;0;1;0;20;1098-0121;WOS:000312832600006;;;J;Kishine, Jun-ichiro;Bostrem, I. G.;Ovchinnikov, A. S.;Sinitsyn, Vl. E.;Coherent sliding dynamics and spin motive force driven by crossed;magnetic fields in a chiral helimagnet;PHYSICAL REVIEW B;86;21;214426;10.1103/PhysRevB.86.214426;DEC 26 2012;2012;We demonstrate that the chiral soliton lattice formed from a chiral;helimagnet exhibits a coherent sliding motion when a time-dependent;magnetic field is applied parallel to the helical axis, in addition to a;static field perpendicular to the helical axis. To describe the coherent;sliding, we use the collective coordinate method and a numerical;analysis. We also show that the time-dependent sliding velocity causes a;time-varying Berry cap which creates a spin motive force. A salient;feature of the chiral soliton lattice is the appearance of a strongly;amplified spin motive force which is directly proportional to the;macroscopic number of solitons (magnetic kinks). DOI:;10.1103/PhysRevB.86.214426;2;0;0;0;2;1098-0121;WOS:000312830400005;;;J;Kratzer, M.;Rubezhanska, M.;Prehal, C.;Beinik, I.;Kondratenko, S. V.;Kozyrev, Yu N.;Teichert, C.;Electrical and photovoltaic properties of self-assembled Ge nanodomes on;Si(001);PHYSICAL REVIEW B;86;24;245320;10.1103/PhysRevB.86.245320;DEC 26 2012;2012;SiGe nano-size islands play a key role in novel electronic and;optoelectronic devices. Therefore, the understanding of basic electrical;properties of individual nanoislands is crucial. Here, the electrical;and photovoltaic properties of individual self-assembled Ge nanodomes;(NDs) on Si(001) have been studied by conductive and photoconductive;atomic force microscopy (AFM). The transition areas between the {113};and {15 3 23} facets turned out to be most conductive whereas the {113};facets exhibit minimum conductivity, which is attributed to a local;increase in Si concentration. Local current-to-voltage measurements;revealed that the NDs show an ohmic resistance, which is in the M Omega;region and scales with the ND-substrate interface area. Upon;illumination by the AFM feedback laser at 860 nm, a photovoltage is;generated. This photovoltage originates in the p-i-n structure formed;between the p-type substrate, the Ge ND, and the n-type diamond AFM;probe. DOI: 10.1103/PhysRevB.86.245320;Teichert, Christian/F-1003-2013;3;0;0;0;3;1098-0121;WOS:000312833400010;;;J;Kudasov, Yu. B.;Maslov, D. A.;Frustration and charge order in LuFe2O4;PHYSICAL REVIEW B;86;21;214427;10.1103/PhysRevB.86.214427;DEC 26 2012;2012;The nature of a transition from two-to three-dimensional charge order;(2D-CO -> 3D-CO) in the multiferroic material LuFe2O4 is discussed. It;is shown that a high-temperature ordered phase of the Ising model with;antiferromagnetic or antiferroelectric (AF) interactions on a triangular;bilayer (W layer) is a dimer partially disordered AF (DPDA) state, which;is a generalization of a well-known partially disordered AF structure;for the triangular lattice. The DPDA state is stable against a variation;of interaction parameters in a wide range. It is demonstrated that the;transition of W layers to the DPDA state gives rise to the 2D-CO phase;in LuFe2O4 at a high temperature. DOI: 10.1103/PhysRevB.86.214427;1;1;0;0;1;1098-0121;WOS:000312830400006;;;J;Lee, Janghee;Park, Joonbum;Lee, Jae-Hyeong;Kim, Jun Sung;Lee, Hu-Jong;Gate-tuned differentiation of surface-conducting states in;Bi1.5Sb0.5Te1.7Se1.3 topological-insulator thin crystals;PHYSICAL REVIEW B;86;24;245321;10.1103/PhysRevB.86.245321;DEC 26 2012;2012;Using field-angle, temperature, and back-gate-voltage dependence of the;weak antilocalization (WAL) and universal conductance fluctuations of;thin Bi1.5Sb0.5Te1.7Se1.3 topological-insulator single crystals, in;combination with gate-tuned Hall resistivity measurements, we reliably;separated the surface conduction of the topological nature from both the;bulk conduction and topologically trivial surface conduction. We;minimized the bulk conduction in the crystals and back-gate tuned the;Fermi level to the topological bottom-surface band while keeping the top;surface insensitive to back-gating with the optimal crystal thickness of;similar to 100 nm. We argue that the WAL effect occurring by the;coherent diffusive motion of carriers in relatively low magnetic fields;is more essential than other transport tools such as the Shubnikov-de;Hass oscillations for confirming the conduction by the topologically;protected surface state. Our approach provides a highly coherent picture;of the surface transport properties of topological insulators and a;reliable means of investigating the fundamental topological nature of;surface conduction and possible quantum-device applications related to;momentum-locked spin polarization in surface states. DOI:;10.1103/PhysRevB.86.245321;Kim, Jun Sung/G-8861-2012; Lee, Janghee/E-7471-2013;Lee, Janghee/0000-0002-7398-9097;11;2;1;0;11;1098-0121;WOS:000312833400011;;;J;Lee, Soo-Yong;Lee, Hyun-Woo;Sim, H. -S.;Visibility recovery by strong interaction in an electronic Mach-Zehnder;interferometer;PHYSICAL REVIEW B;86;23;235444;10.1103/PhysRevB.86.235444;DEC 26 2012;2012;We study the evolution of a single-electron packet of Lorentzian shape;along an edge of the integer quantum Hall regime or in a Mach-Zehnder;interferometer, considering a capacitive Coulomb interaction and using a;bosonization approach. When the packet propagates along a chiral quantum;Hall edge, we find that its electron density profile becomes more;distorted from Lorentzian due to the generation of electron-hole;excitations, as the interaction strength increases yet stays in a;weak-interaction regime. However, as the interaction strength becomes;larger and enters a strong-interaction regime, the distortion becomes;weaker and eventually the Lorentzian packet shape is recovered. The;recovery of the packet shape leads to an interesting feature of the;interference visibility of the symmetric Mach-Zehnder interferometer;whose two arms have the same interaction strength. As the interaction;strength increases, the visibility decreases from the maximum value in;the weak-interaction regime and then increases to the maximum value in;the strong-interaction regime. We argue that this counterintuitive;result also occurs under other types of interactions. DOI:;10.1103/PhysRevB.86.235444;Lee, Hyun-Woo/B-8995-2008; Sim, Heung-Sun/C-1624-2011;Lee, Hyun-Woo/0000-0002-1648-8093;;1;0;0;0;1;1098-0121;WOS:000312832600018;;;J;Li, Qiuzi;Rossi, E.;Das Sarma, S.;Two-dimensional electronic transport on the surface of three-dimensional;topological insulators;PHYSICAL REVIEW B;86;23;235443;10.1103/PhysRevB.86.235443;DEC 26 2012;2012;We present a theoretical approach to describe the two-dimensional (2D);transport properties of the surfaces of three-dimensional topological;insulators (3DTIs) including disorder and phonon scattering effects. The;method that we present is able to take into account the effects of the;strong disorder-induced carrier density inhomogeneities that;characterize the ground state of the surfaces of 3DTIs, especially at;low doping, as recently shown experimentally. Due to the inhomogeneous;nature of the carrier density landscape, standard theoretical techniques;based on ensemble averaging over disorder assuming a spatially uniform;average carrier density are inadequate. Moreover the presence of strong;spatial potential and density fluctuations greatly enhances the effect;of thermally activated processes on the transport properties. The theory;presented is able to take into account all the effects due to the;disorder-induced inhomogeneities, momentum scattering by disorder, and;the effect of electron-phonon scattering processes. As a result the;developed theory is able to accurately describe the transport properties;of the surfaces of 3DTIs both at zero and finite temperature. DOI:;10.1103/PhysRevB.86.235443;Rossi, Enrico/K-2837-2012; Li, Qiuzi/F-6474-2011; Das Sarma, Sankar/B-2400-2009;Rossi, Enrico/0000-0002-2647-3610;;8;1;0;0;8;1098-0121;WOS:000312832600017;;;J;Liang, S. H.;Liu, D. P.;Tao, L. L.;Han, X. F.;Guo, Hong;Organic magnetic tunnel junctions: The role of metal-molecule interface;PHYSICAL REVIEW B;86;22;224419;10.1103/PhysRevB.86.224419;DEC 26 2012;2012;We report a first-principles theoretical investigation of spin-polarized;quantum transport in organic magnetic tunnel junctions (OMTJs) to;provide a microscopic understanding on the sign of the tunnel;magnetoresistance ratio (TMR). We consider two different OMTJs, formed;by sandwiching 1-stearic acid radicals (1-SAR) or 1,18-stearic diacid;radicals (1,18-SDR) between two Ni electrodes. Even though the main;difference between them is only on one of the Ni/molecule contacts, such;a structure difference is found to induce a significant sign change of;the TMR. The TMR is negative for 1-SAR at -19.6%, but is positive for;1,18-SDR at 13.7%. By investigating the concept of scattering density of;states (SDOS), we found that scattering processes of p electrons at the;Ni/molecule interface determines the sign of TMR. Based on spin;polarization of the SDOS, we extend the Julliere model to explain both;the sign and the value of the TMR qualitatively and semiquantitatively.;It is concluded that understanding spin-polarized quantum transport in;organic magnetic tunnel junction requires a comprehensive knowledge of;the electronic structures of the molecule, the metal electrode, and the;metal-molecule contacts. DOI: 10.1103/PhysRevB.86.224419;Guo, Hong/A-8084-2010;4;0;0;0;4;1098-0121;WOS:000312831800009;;;J;Liew, T. C. H.;Holographic arrays based on semiconductor microstructures;PHYSICAL REVIEW B;86;23;235314;10.1103/PhysRevB.86.235314;DEC 26 2012;2012;A concept of complex reflectivity modulation is proposed based on the;electrical control of quantum well exciton resonances that influence the;propagation of light in a layered semiconductor structure. By variation;in exciton energies, both the intensity and the phase of reflected light;can be fully controlled. Unlike previous devices, for full complex light;modulation, the design is based on a single device in a single;structure. The device allows complete 100% intensity contrast and allows;for the construction of small pixel sizes with fast response times. DOI:;10.1103/PhysRevB.86.235314;1;0;0;0;1;1098-0121;WOS:000312832600010;;;J;Lin, Chien-Hung;Sensarma, Rajdeep;Sengupta, K.;Sarma, S. Das;Quantum dynamics of disordered bosons in an optical lattice;PHYSICAL REVIEW B;86;21;214207;10.1103/PhysRevB.86.214207;DEC 26 2012;2012;We study the equilibrium and nonequilibrium properties of strongly;interacting bosons on a lattice in the presence of a random bounded;disorder potential. Using a Gutzwiller projected variational technique,;we study the equilibrium phase diagram of the disordered Bose-Hubbard;model and obtain the Mott insulator, Bose glass, and superfluid phases.;We also study the nonequilibrium response of the system under a periodic;temporal drive where, starting from the superfluid phase, the hopping;parameter is ramped down linearly in time, and back to its initial;value. We study the density of excitations created, the change in the;superfluid order parameter, and the energy pumped into the system in;this process as a function of the inverse ramp rate tau. For the clean;case the density of excitations goes to a constant, while the order;parameter and energy relax as 1/tau and 1/tau(2) respectively. With;disorder, the excitation density decays exponentially with t, with the;decay rate increasing with the disorder, to an asymptotic value;independent of the disorder. The energy and change in order parameter;also decrease as tau is increased. DOI: 10.1103/PhysRevB.86.214207;Das Sarma, Sankar/B-2400-2009;1;0;0;0;1;1098-0121;WOS:000312830400001;;;J;Luo, Yongkang;Bao, Jinke;Shen, Chenyi;Han, Jieke;Yang, Xiaojun;Lv, Chen;Li, Yuke;Jiao, Wenhe;Si, Bingqi;Feng, Chunmu;Dai, Jianhui;Cao, Guanghan;Xu, Zhu-An;Magnetism and crystalline electric field effect in ThCr2Si2-type;CeNi2As2;PHYSICAL REVIEW B;86;24;245130;10.1103/PhysRevB.86.245130;DEC 26 2012;2012;A millimeter-sized ThCr2Si2-type CeNi2As2 single crystal was synthesized;by the NaAs flux method and its physical properties were investigated by;magnetization, transport, and specific-heat measurements. In contrast to;the previously reported CaBe2Ge2-type CeNi2As2, the ThCr2Si2-type;CeNi2As2 is a highly anisotropic uniaxial antiferromagnet with the;transition temperature T-N = 4.8 K. A magnetic-field-induced spin-flop;transition was seen below T-N when the applied B is parallel to the c;axis, the magnetic easy axis, together with a huge frustration parameter;f = theta(W)/T-N. A pronounced Schottky-type anomaly in specific heat;was also found around 160 K, which could be attributed to the;crystalline electric field effect with the excitation energies being;fitted to Delta(1) = 325 K and Delta(2) = 520 K, respectively. Moreover,;the in-plane resistivity anisotropy and low-temperature x-ray;diffractions suggest that this compound is a rare example exhibiting a;possible structure distortion induced by the 4f-electron magnetic;frustration. DOI: 10.1103/PhysRevB.86.245130;Cao, Guanghan/C-4753-2008;5;0;0;0;5;1098-0121;WOS:000312833400008;;;J;Margaris, G.;Trohidou, K. N.;Iannotti, V.;Ausanio, G.;Lanotte, L.;Fiorani, D.;Magnetic behavior of dense nanoparticle assemblies: Interplay of;interparticle interactions and particle system morphology;PHYSICAL REVIEW B;86;21;214425;10.1103/PhysRevB.86.214425;DEC 26 2012;2012;The role of interparticle interactions and the morphology in the;magnetic behavior of dense assemblies of Fe nanoparticles with;concentration well above the percolation threshold has been studied;using the Monte Carlo simulations technique. The initial and;temperature-dependent magnetization curves have been calculated for;different conditions of the assembly morphology and the interparticle;interaction strengths. Our simulations showed that the strong;competition between the anisotropy and exchange energies in nonuniform;dense assemblies results in a frustration of the nanoparticles moments;coupling and creates plateaus and abrupt steps, which indicate a sudden,;collective spin reversal, for low and intermediate dipolar strengths. In;the case of strong dipolar interactions, the stepwise behavior becomes;smoother and gradually disappears. DOI: 10.1103/PhysRevB.86.214425;2;0;0;0;2;1098-0121;WOS:000312830400004;;;J;Marom, Noa;Caruso, Fabio;Ren, Xinguo;Hofmann, Oliver T.;Koerzdoerfer, Thomas;Chelikowsky, James R.;Rubio, Angel;Scheffler, Matthias;Rinke, Patrick;Benchmark of GW methods for azabenzenes;PHYSICAL REVIEW B;86;24;245127;10.1103/PhysRevB.86.245127;DEC 26 2012;2012;Many-body perturbation theory in the GW approximation is a useful method;for describing electronic properties associated with charged;excitations. A hierarchy of GW methods exists, starting from;non-self-consistent G(0)W(0), through partial self-consistency in the;eigenvalues and in the Green's function (scGW(0)), to fully;self-consistent GW (scGW). Here, we assess the performance of these;methods for benzene, pyridine, and the diazines. The quasiparticle;spectra are compared to photoemission spectroscopy (PES) experiments;with respect to all measured particle removal energies and the ordering;of the frontier orbitals. We find that the accuracy of the calculated;spectra does not match the expectations based on their level of;self-consistency. In particular, for certain starting points G(0)W(0);and scGW(0) provide spectra in better agreement with the PES than scGW.;DOI: 10.1103/PhysRevB.86.245127;Rinke, Patrick/A-4208-2010; Caruso, Fabio/D-5917-2013; Korzdorfer, Thomas/B-8266-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Ren, Xinguo/N-4768-2014;Rinke, Patrick/0000-0002-5967-9965;;17;0;0;0;17;1098-0121;WOS:000312833400006;;;J;Marty, K.;Christianson, A. D.;dos Santos, A. M.;Sipos, B.;Matsubayashi, K.;Uwatoko, Y.;Fernandez-Baca, J. A.;Tulk, C. A.;Maier, T. A.;Sales, B. C.;Lumsden, M. D.;Effect of pressure on the neutron spin resonance in the unconventional;superconductor FeTe0.6Se0.4;PHYSICAL REVIEW B;86;22;220509;10.1103/PhysRevB.86.220509;DEC 26 2012;2012;We have carried out a pressure study of the unconventional;superconductor FeTe0.6Se0.4 up to 1.5 GPa by neutron scattering,;resistivity, and magnetic susceptibility measurements. The neutron spin;resonance energy and the superconducting transition temperature have;been extracted as a function of applied pressure in samples obtained;from the same crystal. Both increase with pressure up to amaximum at;approximate to 1.3 GPa, directly demonstrating a correlation between;these two fundamental parameters of unconventional superconductivity. A;comparison between the quantitative evolution of T-c and the resonance;energy as a function of applied pressure is also discussed. These;measurements serve to demonstrate the feasibility of using pressure;dependent inelastic neutron scattering to explore the relationship;between the resonance energy and T-c in unconventional superconductors.;DOI: 10.1103/PhysRevB.86.220509;Maier, Thomas/F-6759-2012; Fernandez-Baca, Jaime/C-3984-2014; Matsubayashi, Kazuyuki/F-7696-2013;3;0;0;0;3;1098-0121;WOS:000312831800004;;;J;Mesterhazy, D.;Berges, J.;von Smekal, L.;Effect of short-range interactions on the quantum critical behavior of;spinless fermions on the honeycomb lattice;PHYSICAL REVIEW B;86;24;245431;10.1103/PhysRevB.86.245431;DEC 26 2012;2012;We present a functional renormalization group investigation of an;Euclidean three-dimensional matrix Yukawa model with U(N) symmetry,;which describes N = 2 Weyl fermions that effectively interact via a;short-range repulsive interaction. This system relates to an effective;low-energy theory of spinless electrons on the honeycomb lattice and can;be seen as a simple model for suspended graphene. We find a continuous;phase transition characterized by large anomalous dimensions for the;fermions and composite degrees of freedom. The critical exponents define;a new universality class distinct from Gross-Neveu type models,;typically considered in this context. DOI: 10.1103/PhysRevB.86.245431;7;0;0;0;7;1098-0121;WOS:000312833400016;;;J;Mizuguchi, Yoshikazu;Fujihisa, Hiroshi;Gotoh, Yoshito;Suzuki, Katsuhiro;Usui, Hidetomo;Kuroki, Kazuhiko;Demura, Satoshi;Takano, Yoshihiko;Izawa, Hiroki;Miura, Osuke;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;86;22;220510;10.1103/PhysRevB.86.220510;DEC 26 2012;2012;Exotic superconductivity has often been discovered in materials with a;layered (two-dimensional) crystal structure. The low dimensionality can;affect the electronic structure and can realize high transition;temperatures (T-c) and/or unconventional superconductivity mechanisms.;We show superconductivity in a new bismuth-oxysulfide compound Bi4O4S3.;Crystal structure analysis indicates that this superconductor has a;layered structure composed of a stacking of spacer layers and BiS2;layers. Band calculation suggests that the Fermi level for Bi4O4S3 is;just on the peak position of the partial density of states of the Bi 6p;orbital within the BiS2 layer. The BiS2 layer will be a basic structure;which provides another universality class for a layered superconducting;family, and this opens up a new field in the physics and chemistry of;low-dimensional superconductors. DOI: 10.1103/PhysRevB.86.220510;68;0;3;0;70;1098-0121;WOS:000312831800005;;;J;Mutiso, Rose M.;Sherrott, Michelle C.;Li, Ju;Winey, Karen I.;Simulations and generalized model of the effect of filler size;dispersity on electrical percolation in rod networks;PHYSICAL REVIEW B;86;21;214306;10.1103/PhysRevB.86.214306;DEC 26 2012;2012;We present a three-dimensional simulation of electrical conductivity in;isotropic, polydisperse rod networks from which we determine the;percolation threshold (phi(c)). Existing analytical models that account;for size dispersity are formulated in the slender-rod limit and are less;accurate for predicting phi(c) in composites with rods of modest L/D.;Using empirical approximations from our simulation data, we generalized;the excluded volume percolation model to account for both finite L/D and;size dispersity, providing a solution for phi(c) of polydisperse rod;networks that is quantitatively accurate across the entire L/D range.;DOI: 10.1103/PhysRevB.86.214306;Li, Ju/A-2993-2008;Li, Ju/0000-0002-7841-8058;12;0;0;0;12;1098-0121;WOS:000312830400002;;;J;Nishikawa, Y.;Hewson, A. C.;Hund's rule coupling in models of magnetic impurities and quantum dots;PHYSICAL REVIEW B;86;24;245131;10.1103/PhysRevB.86.245131;DEC 26 2012;2012;Studies of the effects of the Hund's rule coupling J(H) in multiple;orbit impurities or quantum dots using different models have led to;quite different predictions for the Kondo temperature T-K as a function;of J(H). We show that the differences depend on whether or not the;models conserve orbital angular momentum about the impurity site. Using;numerical renormalization-group calculations, we deduce the renormalized;parameters for the Fermi liquid regime and show that, despite the;differences between the models, the low-energy fixed point in the;strong-correlation regime is universal, with a single energy scale T-K;and just two renormalized interaction parameters, a renormalized single;orbital term, (U) over tilde = 4T(K), and a renormalized Hund's rule;term, (J) over tilde (H) = 8T(K)/3. DOI: 10.1103/PhysRevB.86.245131;3;0;0;0;3;1098-0121;WOS:000312833400009;;;J;Oliveira, G. N. P.;Pereira, A. M.;Lopes, A. M. L.;Amaral, J. S.;dos Santos, A. M.;Ren, Y.;Mendonca, T. M.;Sousa, C. T.;Amaral, V. S.;Correia, J. G.;Araujo, J. P.;Dynamic off-centering of Cr3+ ions and short-range magneto-electric;clusters in CdCr2S4;PHYSICAL REVIEW B;86;22;224418;10.1103/PhysRevB.86.224418;DEC 26 2012;2012;The cubic spinel CdCr2S4 gained recently a vivid interest, given the;relevance of relaxor-like dielectric behavior in its paramagnetic phase.;By a singular combination of local probe techniques, namely, pair;distribution function and perturbed angular correlation, we firmly;establish that the Cr ion plays the central key role on this exotic;phenomenon, namely, through a dynamic off-centering displacement of its;coordination sphere. We further show that this off-centering of the;magnetic Cr ion gives rise to a peculiar entanglement between the polar;and magnetic degrees of freedom, stabilizing, in the paramagnetic phase,;short-range magnetic clusters, clearly seen in ultralow-field;susceptibility measurements. Moreover, the Landau theory is here used to;demonstrate that a linear coupling between the magnetic and polar order;parameters is sufficient to justify the appearance of magnetic cluster;in the paramagnetic phase of this compound. These results open insights;on the hotly debated magnetic and polar interaction, setting a step;forward in the reinterpretation of the coupling of different physical;degrees of freedom. DOI: 10.1103/PhysRevB.86.224418;Universidade Aveiro, Departamento Fisica/E-4128-2013; Amaral, Vitor/A-1570-2009; Pereira, Andre/B-4648-2008; Amaral, Joao/C-6354-2009; Lopes, Armandina/I-5066-2013; Martins Correia, Joao Guilherme/J-5473-2013; Esteves de Araujo, Joao Pedro/D-4389-2011;Amaral, Vitor/0000-0003-3359-7133; Pereira, Andre/0000-0002-8587-262X;;Amaral, Joao/0000-0003-0488-9372; Lopes, Armandina/0000-0001-8776-0894;;Martins Correia, Joao Guilherme/0000-0002-8848-0824; Esteves de Araujo,;Joao Pedro/0000-0002-1646-7727;7;1;0;0;7;1098-0121;WOS:000312831800008;;;J;Olund, Christopher T.;Zhao, Erhai;Current-phase relation for Josephson effect through helical metal;PHYSICAL REVIEW B;86;21;214515;10.1103/PhysRevB.86.214515;DEC 26 2012;2012;Josephson junctions fabricated on the surface of three-dimensional;topological insulators ( TI) show a few unusual properties distinct from;conventional Josephson junctions. In these devices, the Josephson;coupling and the supercurrent are mediated by helical metal, the;two-dimensional surface state of the TI. A line junction of this kind is;known to support Andreev bound states at zero energy for phase bias pi;and, consequently, the so-called fractional ac Josephson effect.;Motivated by recent experiments on TI-based Josephson junctions, here we;describe a convenient algorithm to compute the bound-state spectrum and;the current-phase relation for junctions of finite length and width. We;present analytical results for the bound-state spectrum, and discuss the;dependence of the current-phase relation on the length and width of the;junction, the chemical potential of the helical metal, and temperature.;A thorough understanding of the current-phase relation may help in;designing topological superconducting qubits and manipulating Majorana;fermions. DOI: 10.1103/PhysRevB.86.214515;Zhao, Erhai/B-3463-2010;Zhao, Erhai/0000-0001-8954-1601;5;0;0;0;5;1098-0121;WOS:000312830400008;;;J;Pakdel, Sahar;Miri, MirFaez;Faraday rotation and circular dichroism spectra of gold and silver;nanoparticle aggregates;PHYSICAL REVIEW B;86;23;235445;10.1103/PhysRevB.86.235445;DEC 26 2012;2012;We study the magneto-optical response of noble metal nanoparticle;clusters. We consider the interaction between the light-induced dipoles;of particles. In the presence of a magnetic field, the simplest achiral;cluster, a dimer, exhibits circular dichroism (CD). The CD of a dimer;depends on the directions of the magnetic field and the light wave;vector. The CD of a populous cluster weakly depends on the magnetic;field. Upon scattering from the cluster, an incident linearly polarized;light with polarization azimuth. becomes elliptically polarized. The;polarization azimuth rotation and ellipticity angle variation are;sinusoidal functions of 2 phi.. The anisotropy and the chirality of the;cluster control the amplitude and offset of these sinusoidal functions.;The Faraday rotation and Faraday ellipticity are also sinusoidal;functions of 2 phi. Near the surface plasmon frequency, Faraday rotation;and Faraday ellipticity increase. DOI: 10.1103/PhysRevB.86.235445;6;0;0;0;6;1098-0121;WOS:000312832600019;;;J;Pedersen, Jesper Goor;Brynildsen, Mikkel H.;Cornean, Horia D.;Pedersen, Thomas Garm;Optical Hall conductivity in bulk and nanostructured graphene beyond the;Dirac approximation;PHYSICAL REVIEW B;86;23;235438;10.1103/PhysRevB.86.235438;DEC 26 2012;2012;We present a perturbative method for calculating the optical Hall;conductivity in a tight-binding framework based on the Kubo formalism.;The method involves diagonalization only of the Hamiltonian in absence;of the magnetic field, and thus avoids the computational problems;usually arising due to the huge magnetic unit cells required to maintain;translational invariance in the presence of a Peierls phase. A recipe;for applying the method to numerical calculations of the magneto-optical;response is presented. We apply the formalism to the case of ordinary;and gapped graphene in a next-nearest-neighbor tight-binding model as;well as graphene antidot lattices. In both cases, we find unique;signatures in the Hall response that are not captured in continuum;(Dirac) approximations. These include a nonzero optical Hall;conductivity even when the chemical potential is at the Dirac point;energy. Numerical results suggest that this effect should be measurable;in experiments. DOI: 10.1103/PhysRevB.86.235438;Goor Pedersen, Jesper/C-3965-2008; Cornean, Horia/A-4064-2008;Goor Pedersen, Jesper/0000-0002-8411-240X; Cornean,;Horia/0000-0003-2700-8785;1;0;0;0;1;1098-0121;WOS:000312832600012;;;J;Rodriguez, Alejandro W.;Reid, M. T. Homer;Johnson, Steven G.;Fluctuating-surface-current formulation of radiative heat transfer for;arbitrary geometries;PHYSICAL REVIEW B;86;22;220302;10.1103/PhysRevB.86.220302;DEC 26 2012;2012;We describe a fluctuating-surface-current formulation of radiative heat;transfer, applicable to arbitrary geometries in both the near and far;field, that directly exploits efficient and sophisticated techniques;from the boundary-element method. We validate as well as extend previous;results for spheres and cylinders, and also compute the heat transfer in;a more complicated geometry consisting of two interlocked rings.;Finally, we demonstrate how this method can be adapted to compute the;spatial distribution of heat flux on the surfaces of the bodies. DOI:;10.1103/PhysRevB.86.220302;13;0;0;0;13;1098-0121;WOS:000312831800001;;;J;Saidi, Wissam A.;Lee, Minyoung;Li, Liang;Zhou, Guangwen;McGaughey, Alan J. H.;Ab initio atomistic thermodynamics study of the early stages of Cu(100);oxidation;PHYSICAL REVIEW B;86;24;245429;10.1103/PhysRevB.86.245429;DEC 26 2012;2012;Using an ab initio atomistic thermodynamics framework, we identify the;stable surface structures during the early stages of Cu(100) oxidation;at finite temperature and pressure conditions. We predict the clean;surface, the 0.25 monolayer oxygen-covered surface, and the missing-row;reconstruction as thermodynamically stable structures in range of;100-1000 K and 10(-15)-10(5) atm, consistent with previous experimental;and theoretical results. We also investigate the thermodynamic;stabilities of possible precursors to Cu2O formation including;missing-row reconstruction structures that include extra on-or;subsurface oxygen atoms as well as boundary phases formed from two;missing-row nanodomains. While these structures are not predicted to be;thermodynamically stable for oxygen chemical potentials below the;nucleation limit of Cu2O, they are likely to exist due to kinetic;hindrance. DOI: 10.1103/PhysRevB.86.245429;Li, Liang/C-5782-2012;7;0;0;0;7;1098-0121;WOS:000312833400014;;;J;Sakuma, R.;Miyake, T.;Aryasetiawan, F.;Self-energy and spectral function of Ce within the GW approximation;PHYSICAL REVIEW B;86;24;245126;10.1103/PhysRevB.86.245126;DEC 26 2012;2012;To investigate how far the GW approximation can treat systems with;strong on-site correlations, we perform calculations of the;self-energies and spectral functions of alpha-and gamma-Ce within the GW;approximation. For this strongly correlated material, the screened;interaction exhibits a complex and rich structure which is attributed to;strong particle-hole transitions involving localized 4f states. This;structure in the screened interaction is carried over to the;self-energy, which in turn yields spectral functions with multiple;peaks. A satellite at around 5 eV above the Fermi level is formed, which;is reminiscent of the experimentally observed upper Hubbard band, while;the experimentally observed peak structure below the Fermi level at -2;eV and disappearance of the quasiparticle peak in the. phase are not;reproduced. DOI: 10.1103/PhysRevB.86.245126;6;0;0;0;6;1098-0121;WOS:000312833400005;;;J;Schulze, T. P.;Smereka, P.;Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting;layers, quantum dots, capping, and nanorings;PHYSICAL REVIEW B;86;23;235313;10.1103/PhysRevB.86.235313;DEC 26 2012;2012;A new kinetic Monte Carlo algorithm that efficiently accounts for;elastic strain is presented and applied to study various phenomena that;take place during heteroepitaxial growth. For example, it is;demonstrated that faceted quantum dots occur via the layer-by-layer;nucleation of prepyramids on top of a critical layer with faceting;occurring by anisotropic surface diffusion. It is also shown that the;dot growth is enhanced by the depletion of the critical layer which;leaves behind a wetting layer. Capping simulations provide insight into;the mechanisms behind dot erosion and ring formation. The algorithm used;for the simulations presented here is based on the observation that;adatom and dimer motion is essentially decoupled from the elastic field.;This is exploited by decomposing the film into two parts: the weakly;bonded portion and the strongly bonded portion. The weakly bonded;portion is taken to evolve independent of the elastic field. In this way;the elastic field need only be updated infrequently. Extensive;validation reveals that there is little loss of fidelity but the;algorithm is fifteen to twenty times faster. DOI:;10.1103/PhysRevB.86.235313;Smereka, Peter/F-9974-2013;7;0;0;0;7;1098-0121;WOS:000312832600009;;;J;Shukla, D. K.;Francoual, S.;Skaugen, A.;von Zimmermann, M.;Walker, H. C.;Bezmaternykh, L. N.;Gudim, I. A.;Temerov, V. L.;Strempfer, J.;Ho and Fe magnetic ordering in multiferroic HoFe3(BO3)(4);PHYSICAL REVIEW B;86;22;224421;10.1103/PhysRevB.86.224421;DEC 26 2012;2012;Resonant and nonresonant x-ray scattering studies on HoFe3(BO3)(4);reveal competing magnetic ordering of Ho and Fe moments. Temperature and;x-ray polarization dependent measurements employed at the Ho L-3 edge;directly reveal a spiral spin order of the induced Ho moments in the ab;plane propagating along the c axis, a screw-type magnetic structure. At;about 22.5 K the Fe spins are observed to rotate within the basal plane;inducing spontaneous electric polarization, P. Components of P in the;basal plane and along the c axis can be scaled with the separated;magnetic x-ray scattering intensities of the Fe and Ho magnetic;sublattices, respectively. DOI: 10.1103/PhysRevB.86.224421;Walker, Helen/C-4201-2011; Shukla, Dinesh /D-2232-2012;Walker, Helen/0000-0002-7859-5388;;1;0;0;0;1;1098-0121;WOS:000312831800011;;;J;Smolenski, T.;Kazimierczuk, T.;Goryca, M.;Jakubczyk, T.;Klopotowski, L.;Cywinski, L.;Wojnar, P.;Golnik, A.;Kossacki, P.;In-plane radiative recombination channel of a dark exciton in;self-assembled quantum dots;PHYSICAL REVIEW B;86;24;241305;10.1103/PhysRevB.86.241305;DEC 26 2012;2012;We demonstrate evidence for a radiative recombination channel of dark;excitons in self-assembled quantum dots. This channel is due to a light;hole admixture in the excitonic ground state. Its presence was;experimentally confirmed by a direct observation of the dark exciton;photoluminescence from a cleaved edge of the sample. The;polarization-resolved measurements revealed that a photon created from;the dark exciton recombination is emitted only in the direction;perpendicular to the growth axis. Strong correlation between the dark;exciton lifetime and the in-plane hole g factor enabled us to show that;the radiative recombination is a dominant decay channel of the dark;excitons in CdTe/ZnTe quantum dots. DOI: 10.1103/PhysRevB.86.241305;Cywinski, Lukasz/E-5348-2010;8;0;0;0;8;1098-0121;WOS:000312833400004;;;J;Tahara, H.;Bamba, M.;Ogawa, Y.;Minami, F.;Observation of a dynamical mixing process of exciton-polaritons in a;ZnSe epitaxial layer using four-wave mixing spectroscopy;PHYSICAL REVIEW B;86;23;235208;10.1103/PhysRevB.86.235208;DEC 26 2012;2012;We have observed a coherent spectral change of exciton-polaritons in a;ZnSe epitaxial layer through spectrally resolved four-wave mixing;spectroscopy. The spectra exhibit an exchange of the dominant peak;position between the different polariton branches depending on the delay;time of the second pulse. This result reflects the initial creation;process of polaritons with many-body interactions. The calculation based;on the exciton-photon microscopic model reveals that the spectral change;occurs due to the four-particle correlations between heavy-hole and;light-hole excitons; it clearly shows the dynamical mixing process of;exciton-polaritons in the initial creation. DOI:;10.1103/PhysRevB.86.235208;1;0;0;0;1;1098-0121;WOS:000312832600008;;;J;Tomio, Yuh;Suzuura, Hidekatsu;Ando, Tsuneya;Cross-polarized excitons in double-wall carbon nanotubes;PHYSICAL REVIEW B;86;24;245428;10.1103/PhysRevB.86.245428;DEC 26 2012;2012;Optical absorption in double-wall carbon nanotubes for light polarized;perpendicular to the tube axis is studied by taking into account exciton;effects and depolarization effects within an effective-mass theory. The;Coulomb interaction is suppressed by not only intrawall screening;effects but also interwall screening, leading to the reduction of;exciton binding energies and band gaps. When two tubes are both;semiconducting, a clear exciton peak still survives even under;depolarization effects for the outer tube, but the exciton peak of the;inner tube has an asymmetric Fano line shape due to the coupling with;continuum states of the outer tube. When a double-wall nanotube contains;a metallic tube, either inner or outer, the exciton of the;semiconducting tube loses its peak structure under depolarization;effects. DOI: 10.1103/PhysRevB.86.245428;SUZUURA, Hidekatsu/F-7605-2012;0;0;0;0;0;1098-0121;WOS:000312833400013;;;J;Tsvelik, A. M.;Model description of the supersolid state in YBa2Cu3O6+x;PHYSICAL REVIEW B;86;22;220508;10.1103/PhysRevB.86.220508;DEC 26 2012;2012;I employ a semiphenomenological model introduced by Tsvelik and Chubukov;[Phys. Rev. Lett. 98, 237001 (2007)] to describe the state with;coexisting superconductivity (SC) and charge density wave (CDW) recently;discovered in YBa2Cu3O6+x (YBCO). The SC and the CDW order parameter;fields are united in a single pseudospin and can be rotated into each;other. It is suggested that disorder creates isolated pseudospins which;become centers of inelastic scattering of electrons. It is suggested;that this scattering is responsible for the logarithmic upturn in the;resistivity rho(T) similar to - ln T observed at low doping. DOI:;10.1103/PhysRevB.86.220508;0;0;0;0;0;1098-0121;WOS:000312831800003;;;J;Uebelacker, Stefan;Honerkamp, Carsten;Self-energy feedback and frequency-dependent interactions in the;functional renormalization group flow for the two-dimensional Hubbard;model;PHYSICAL REVIEW B;86;23;235140;10.1103/PhysRevB.86.235140;DEC 26 2012;2012;We study the impact of including self-energy feedback and;frequency-dependent interactions on functional renormalization group;flows for the two-dimensional Hubbard model on the square lattice at;weak to moderate coupling strength. Previous studies using the;functional renormalization group had ignored these two ingredients to a;large extent, and the question is how much the flows to strong coupling;analyzed by this method depend on these approximations. Here we include;the imaginary part of the self-energy on the imaginary axis and the;frequency dependence of the running interactions on a frequency mesh of;10 frequencies on the Matsubara axis. We find that (i) the critical;scales for the flows to strong coupling are shifted downward by a factor;that is usually of order 1 but can get larger in specific parameter;regions, and (ii) that the leading channel in this flow does not depend;strongly on whether self-energies and frequency dependence is included;or not. We also discuss the main features of the self-energies;developing during the flows. DOI: 10.1103/PhysRevB.86.235140;5;0;0;0;5;1098-0121;WOS:000312832600002;;;J;Velizhanin, Kirill A.;Shahbazyan, Tigran V.;Long-range plasmon-assisted energy transfer over doped graphene;PHYSICAL REVIEW B;86;24;245432;10.1103/PhysRevB.86.245432;DEC 26 2012;2012;We demonstrate that longitudinal plasmons in doped monolayer graphene;can mediate highly efficient long-range energy transfer between nearby;fluorophores, e.g., semiconductor quantum dots. We derive a simple;analytical expression for the energy transfer efficiency that;incorporates all the essential processes involved. We perform numerical;calculations of the transfer efficiency for a pair of PbSe quantum dots;near graphene for interfluorophore distances of up to 1 mu m and find;that the plasmon-assisted long-range energy transfer can be enhanced by;up to a factor of similar to 10(4) relative to the Forster's transfer in;vacuum.;Velizhanin, Kirill/C-4835-2008;3;0;0;0;3;1098-0121;WOS:000312833400017;;;J;Vivo, Edoardo;Nicoli, Matteo;Engler, Martin;Michely, Thomas;Vazquez, Luis;Cuerno, Rodolfo;Strong anisotropy in surface kinetic roughening: Analysis and;experiments;PHYSICAL REVIEW B;86;24;245427;10.1103/PhysRevB.86.245427;DEC 26 2012;2012;We report an experimental assessment of surface kinetic roughening;properties that are anisotropic in space. Working for two specific;instances of silicon surfaces irradiated by ion-beam sputtering under;diverse conditions (with and without concurrent metallic impurity;codeposition), we verify the predictions and consistency of a recently;proposed scaling Ansatz for surface observables like the two-dimensional;(2D) height power spectral density (PSD). In contrast with other;formulations, this ansatz is naturally tailored to the study of;two-dimensional surfaces, and allows us to readily explore the;implications of anisotropic scaling for other observables, such as;real-space correlation functions and PSD functions for 1D profiles of;the surface. Our results confirm that there are indeed actual;experimental systems whose kinetic roughening is strongly anisotropic,;as consistently described by this scaling analysis. In the light of our;work, some types of experimental measurements are seen to be more;affected by issues like finite space resolution effects, etc. that may;hinder a clear-cut assessment of strongly anisotropic scaling in the;present and other practical contexts. DOI: 10.1103/PhysRevB.86.245427;VAZQUEZ, LUIS/A-1272-2009;VAZQUEZ, LUIS/0000-0001-6220-2810;2;0;0;0;2;1098-0121;WOS:000312833400012;;;J;Weiler, S.;Ulhaq, A.;Ulrich, S. M.;Richter, D.;Jetter, M.;Michler, P.;Roy, C.;Hughes, S.;Phonon-assisted incoherent excitation of a quantum dot and its emission;properties;PHYSICAL REVIEW B;86;24;241304;10.1103/PhysRevB.86.241304;DEC 26 2012;2012;We present a detailed study of a phonon-assisted incoherent excitation;mechanism of single quantum dots. A spectrally detuned continuous-wave;laser couples to a quantum dot transition by mediation of acoustic;phonons, whereby excitation efficiencies up to 20% with respect to;strictly resonant excitation can be achieved at T = 9 K.;Laser-frequency-dependent analysis of the quantum dot intensity;distinctly maps the underlying acoustic phonon bath and shows good;agreement with our polaron master equation theory. An analytical;solution for the steady-state exciton density (which is proportional to;the photoluminescence) is introduced which predicts a broadband;incoherent coupling process mediated by electron-phonon scattering.;Moreover, we investigate the coherence properties of the emitted light;with respect to strictly resonant versus phonon-assisted excitation,;revealing the importance of narrow band triggered emitter-state;initialization for possible applications of a quantum dot exciton system;as a qubit. DOI: 10.1103/PhysRevB.86.241304;Jetter, Michael/I-8270-2012;8;0;0;0;8;1098-0121;WOS:000312833400003;;;J;Zhang, L.;Schwertfager, N.;Cheiwchanchamnangij, T.;Lin, X.;Glans-Suzuki, P. -A.;Piper, L. F. J.;Limpijumnong, S.;Luo, Y.;Zhu, J. F.;Lambrecht, W. R. L.;Guo, J. -H.;Electronic band structure of graphene from resonant soft x-ray;spectroscopy: The role of core-hole effects;PHYSICAL REVIEW B;86;24;245430;10.1103/PhysRevB.86.245430;DEC 26 2012;2012;The electronic structure and band dispersion of graphene on SiO2 have;been studied by x-ray-absorption spectroscopy (XAS), x-ray-emission;spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS).;Using first-principles calculations, it is found that the core-hole;effect is dramatic in XAS while it has negligible consequences in XES.;Strong dispersive features, due to the conservation of crystal momentum,;are observed in RIXS spectra. Simulated RIXS spectra based on the;Kramers-Heisenberg theory agree well with the experimental results,;provided a shift between RIXS and XAS due to the absence or presence of;the core hole is taken into account. DOI: 10.1103/PhysRevB.86.245430;Luo, Yi/B-1449-2009; Zhu, Junfa/E-4020-2010;Luo, Yi/0000-0003-0007-0394; Zhu, Junfa/0000-0003-0888-4261;10;1;0;0;10;1098-0121;WOS:000312833400015;;;J;Zhang, Steven S. -L.;Zhang, Shufeng;Spin convertance at magnetic interfaces;PHYSICAL REVIEW B;86;21;214424;10.1103/PhysRevB.86.214424;DEC 26 2012;2012;Exchange interaction between conduction electrons and magnetic moments;at magnetic interfaces leads to mutual conversion between spin current;and magnon current. We introduce a concept of spin convertance which;quantitatively measures magnon current induced by spin accumulation and;spin current created by magnon accumulation at a magnetic interface. We;predict several phenomena on charge and spin drag across a magnetic;insulator spacer for a few layered structures. DOI:;10.1103/PhysRevB.86.214424;Zhang, Shufeng/G-7833-2011;10;1;0;0;10;1098-0121;WOS:000312830400003;;;J;Nakhmedov, Enver;Alekperov, Oktay;Oppermann, Reinhold;Effects of randomness on the critical temperature in;quasi-two-dimensional organic superconductors;PHYSICAL REVIEW B;86;21;214513;10.1103/PhysRevB.86.214513;DEC 21 2012;2012;The effects of nonmagnetic disorder on the critical temperature T-c of;organic weak-linked layered superconductors with singlet in-plane;pairing are considered. A randomness in the interlayer Josephson;coupling is shown to destroy phase coherence between the layers, and T-c;suppresses smoothly in a large extent of the disorder strength.;Nevertheless, the disorder of arbitrarily high strength cannot destroy;completely the superconducting phase. The obtained quasilinear decrease;of the critical temperature with increasing disorder strength is in good;agreement with experimental measurements. DOI:;10.1103/PhysRevB.86.214513;0;0;0;0;0;1098-0121;WOS:000312693200004;;;J;Sanson, Andrea;Giarola, Marco;Rossi, Barbara;Mariotto, Gino;Cazzanelli, Enzo;Speghini, Adolfo;Vibrational dynamics of single-crystal YVO4 studied by polarized;micro-Raman spectroscopy and ab initio calculations;PHYSICAL REVIEW B;86;21;214305;10.1103/PhysRevB.86.214305;DEC 21 2012;2012;The vibrational properties of yttrium orthovanadate (YVO4) single;crystals, with tetragonal zircon structure, have been investigated by;means of polarized micro-Raman spectroscopy and ab initio calculations.;Raman spectra were taken at different polarizations and orientations;carefully set by the use of a micromanipulator, so that all of the;twelve Raman-active modes, expected on the basis of the group theory,;were selected in turn and definitively assigned in wave number and;symmetry. In particular the E-g(4) mode, assigned incorrectly in;previous literature, has been observed at 387 cm(-1). Moreover, the very;weak E-g(1) mode, peaked at about 137 cm(-1), was clearly observed only;under some excitation wavelengths, and its peculiar Raman excitation;profile was measured within a wide region of the visible. Finally, ab;initio calculations based on density-functional theory have been;performed in order to determine both Raman and infrared vibrational;modes and to corroborate the experimental results. The rather good;agreement between computational and experimental frequencies is slightly;better than in previous computational works and supports our;experimental symmetry assignments. DOI: 10.1103/PhysRevB.86.214305;Mariotto, Gino/B-1629-2013; Speghini, Adolfo/G-3474-2012;1;0;0;0;1;1098-0121;WOS:000312693200002;;;J;Thomson, R. I.;Jain, P.;Cheetham, A. K.;Carpenter, M. A.;Elastic relaxation behavior, magnetoelastic coupling, and order-disorder;processes in multiferroic metal-organic frameworks;PHYSICAL REVIEW B;86;21;214304;10.1103/PhysRevB.86.214304;DEC 21 2012;2012;Resonant ultrasound spectroscopy has been used to analyze magnetic and;ferroelectric phase transitions in two multiferroic metal-organic;frameworks (MOFs) with perovskite-like structures;[(CH3)(2)NH2]M(HCOO)(3)(DMA[M] F, M = Co, Mn). Elastic and anelastic;anomalies are evident at both the magnetic ordering temperature and;above the higher temperature ferroelectric transition. Broadening of;peaks above the ferroelectric transition implies the diminishing;presence of a dynamic process and is caused by an ordering of the;central DMA ([(CH3)(2)NH2](+)) cation which ultimately causes a change;in the hydrogen bond conformation and provides the driving mechanism for;ferroelectricity. This is unlike traditional mechanisms for;ferroelectricity in perovskites which typically involve ionic;displacements. A comparison of these mechanisms is made by drawing on;examples from the literature. Small elastic stiffening at low;temperatures suggests weak magnetoelastic coupling in these materials.;This behavior is consistent with other magnetic systems studied,;although there is no change in Q(-1) associated with magnetic;order-disorder, and is the first evidence of magnetoelastic coupling in;MOFs. This could help lead to the tailoring of MOFs with a larger;coupling leading to magnetoelectric coupling via a common strain;mechanism. DOI: 10.1103/PhysRevB.86.214304;Jain, Prashant/C-8135-2009;15;4;0;0;15;1098-0121;WOS:000312693200001;;;J;Yin, Junqi;Eisenbach, Markus;Nicholson, Don M.;Rusanu, Aurelian;Effect of lattice vibrations on magnetic phase transition in bcc iron;PHYSICAL REVIEW B;86;21;214423;10.1103/PhysRevB.86.214423;DEC 21 2012;2012;The most widely taught example of a magnetic transition is that of Fe at;1043 K. Despite the high temperature most discussions of this transition;focus on the magnetic states of a fixed spin lattice with lattice;vibrations analyzed separately and simply added. We propose a model of;alpha iron that fully couples spin and displacement degrees of freedom.;Results demonstrate a significant departure from models that treat these;coordinates independently. The success of the model rests on a first;principles calculation of changes in energy with respect to spin;configurations on a bcc-iron lattice with displacements. Complete;details of environment-dependent exchange interactions that augment the;Finnis-Sinclair potential are given and comparisons to measurements are;made. We find that coupling has no effect on critical exponents, a small;effect on the transition temperature, T-c, and a large effect on the;entropy of transformation. DOI: 10.1103/PhysRevB.86.214423;Ni, Daye/F-6920-2014;5;0;0;0;5;1098-0121;WOS:000312693200003;;;J;Butler, Keith T.;Harding, John H.;Atomistic simulation of doping effects on growth and charge transport in;Si/Ag interfaces in high-performance solar cells;PHYSICAL REVIEW B;86;24;245319;10.1103/PhysRevB.86.245319;DEC 21 2012;2012;We present the results of a first-principles atomistic simulation study;of the effects of phosphorus doping on the silver/silicon interface as;found in high-performance solar cells. Calculating the interfacial;stabilities of the (110)/(110) and (111)/(111) interfaces we demonstrate;how the presence of phosphorus increases the nucleation rate of silver;crystallites and how the relative stabilities of the interfaces depend;on the doping. We then calculate the electronic structure of the;interfaces, demonstrating how the presence of phosphorus leads to a;buildup of positive charge in the silicon and an opposite negative;charge in the silver. Finally we show how this charge buildup;significantly affects the n-type Schottky barriers at the interfaces, in;both cases lowering the Schottky barrier by more than 100 meV. DOI:;10.1103/PhysRevB.86.245319;4;0;0;0;4;1098-0121;WOS:000312697500004;;;J;Carbotte, J. P.;Schachinger, E.;c-axis optical sum in underdoped superconducting cuprates;PHYSICAL REVIEW B;86;22;224512;10.1103/PhysRevB.86.224512;DEC 21 2012;2012;In conventional metals, the total optical spectral weight under the real;part of the dynamical conductivity remains unchanged in going from;normal to superconducting state. In the underdoped cuprates, however,;experiments found that the interlayer conductivity no longer respects;this sum rule. Here, we find that a recently proposed phenomenological;model of the pseudogap state which is based on ideas of a resonating;valence bond spin liquid naturally leads to such a sum-rule violation.;For the interplane charge transfer, a coherent tunneling model is used.;We also obtain analytic results based on a simplification of the theory;which reduces it to an arc model. This provides further insight into the;effect of the opening of a pseudogap on the c-axis optical conductivity;Re[sigma(c)(omega)]. The missing area under Re[sigma(c)(omega)];normalized to the superfluid density, which is found to be one in the;Fermi-liquid limit with no pseudogap, is considerably reduced when the;pseudogap becomes large and the size of the Luttinger pockets or arcs is;small.;2;0;0;0;2;1098-0121;WOS:000312693900004;;;J;Das Sarma, S.;Sau, Jay D.;Stanescu, Tudor D.;Splitting of the zero-bias conductance peak as smoking gun evidence for;the existence of the Majorana mode in a superconductor-semiconductor;nanowire;PHYSICAL REVIEW B;86;22;220506;10.1103/PhysRevB.86.220506;DEC 21 2012;2012;Recent observations of a zero-bias conductance peak in tunneling;transport measurements in superconductor-semiconductor nanowire devices;provide evidence for the predicted zero-energy Majorana modes, but not;the conclusive proof of their existence. We establish that direct;observation of a splitting of the zero-bias conductance peak can serve;as the smoking gun evidence for the existence of the Majorana mode. We;show that the splitting has an oscillatory dependence on the Zeeman;field (chemical potential) at fixed chemical potential (Zeeman field).;By contrast, when the density is constant rather than the chemical;potential-the likely situation in the current experimental setups-the;splitting oscillations are generically suppressed. Our theory predicts;the conditions under which the splitting oscillations can serve as the;smoking gun for the experimental confirmation of the elusive Majorana;mode.;Das Sarma, Sankar/B-2400-2009;23;0;0;0;23;1098-0121;WOS:000312693900001;;;J;Durach, Maxim;Rusina, Anastasia;Transforming Fabry-Perot resonances into a Tamm mode;PHYSICAL REVIEW B;86;23;235312;10.1103/PhysRevB.86.235312;DEC 21 2012;2012;We propose an optical structure composed of two metal nanolayers;enclosing a distributed Bragg reflector (DBR) mirror. The structure is;an open photonic system whose bound modes are coupled to external;radiation. We apply the special theoretical treatment based on inversion;symmetry of the structure to classify its resonances. We show that the;structure supports resonances transitional between Fabry-Perot modes and;Tamm plasmons. When the dielectric contrast of the DBR is removed these;modes are a pair of conventional Fabry-Perot resonances. They spectrally;merge into a Tamm mode at high contrast. The optical properties of the;structure in the frequency range of the DBR stop band, including highly;beneficial 50% transmittivity through thick structures with;sub-skin-depth metal films, are determined by the hybrid quasinormal;modes of the open nonconservative structure under consideration. The;results can find a broad range of applications in photonics and;optoelectronics, including the possibility of coherent control over;optical fields in the class of structures similar to the one proposed;here. DOI: 10.1103/PhysRevB.86.235312;3;0;1;0;4;1098-0121;WOS:000312694800003;;;J;Gumeniuk, Roman;Sarkar, Rajib;Geibel, Christoph;Schnelle, Walter;Paulmann, Carsten;Baenitz, Michael;Tsirlin, Alexander A.;Guritanu, Violeta;Sichelschmidt, Joerg;Grin, Yuri;Leithe-Jasper, Andreas;YbPtGe2: A multivalent charge-ordered system with an unusual spin;pseudogap;PHYSICAL REVIEW B;86;23;235138;10.1103/PhysRevB.86.235138;DEC 21 2012;2012;We performed a study of the structural and physical properties of;YbPtGe2. This compound is a multivalent charge-ordered system presenting;an unusual spin pseudogap below 200 K. The crystal structure of YbPtGe2;is refined from single-crystal and powder high-resolution synchrotron;x-ray diffraction data at different temperatures. Analysis of the;structural features of YbPtGe2, together with a combined study of Yb;L-III x-ray absorption spectroscopy, magnetic susceptibility chi(T),;thermopower S(T), and Yb-171 and Pt-195 NMR indicate half of the Yb;atoms to be in an intermediate valence state with an electronic;configuration close to 4f(13) (Yb3+), while for the remaining Yb atoms;the 4f(14) (Yb2+) configuration with almost no valence fluctuations is;most likely. A drastic drop of the magnetic susceptibility and a;decrease of the isotropic shift K-195(iso)(T) with decreasing;temperature in the temperature range of 50-200 K evidence the opening of;a spin pseudogap with an activation energy of Delta/k(B) similar to 200;K. Surprisingly, transport properties do not show clear evidence for the;opening of a charge gap, thus excluding a standard Kondo-insulator;scenario. Possible origins for this unusual electronic (valence);behavior are discussed. DOI: 10.1103/PhysRevB.86.235138;Sichelschmidt, Joerg/A-6005-2013; Sarkar, Rajib/G-9738-2011; Tsirlin, Alexander/D-6648-2013;3;1;0;0;3;1098-0121;WOS:000312694800002;;;J;Ivek, T.;Kovacevic, I.;Pinteric, M.;Korin-Hamzic, B.;Tomic, S.;Knoblauch, T.;Schweitzer, D.;Dressel, M.;Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)(2)I-3;PHYSICAL REVIEW B;86;24;245125;10.1103/PhysRevB.86.245125;DEC 21 2012;2012;Electric-field-dependent pulse measurements are reported in the;charge-ordered state of alpha-(BEDT-TTF)(2)I-3. At low electric fields;up to about 50 V/cm only negligible deviations from Ohmic behavior can;be identified with no threshold field. At larger electric fields and up;to about 100 V/cm a reproducible negative differential resistance is;observed with a significant change in shape of the measured resistivity;in time. These changes critically depend on whether constant voltage or;constant current is applied to the single crystal. At high enough;electric fields the resistance displays a dramatic drop down to metallic;values and relaxes subsequently in a single-exponential manner to its;low-field steady-state value. We argue that such an;electric-field-induced negative differential resistance and switching to;transient states are fingerprints of cooperative domain-wall dynamics;inherent to two-dimensional bond-charge density waves with;ferroelectric-like nature. DOI: 10.1103/PhysRevB.86.245125;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;3;0;0;0;3;1098-0121;WOS:000312697500002;;;J;Katanin, A.;Longitudinal and transverse static spin fluctuations in layered;ferromagnets and antiferromagnets;PHYSICAL REVIEW B;86;22;224416;10.1103/PhysRevB.86.224416;DEC 21 2012;2012;We analyze the momentum dependence of static susceptibilities of layered;local-moment systems below Curie (Neel) temperature within the 1/S;expansion, the renormalization-group (RG) approach, and the first order;of the 1/N expansion. We argue that already at sufficiently low;temperatures the previously known results of the spin-wave theory and RG;approach for the transverse spin susceptibility acquire strong;corrections, which appear due to the interaction of the incoming magnon;having momentum q with virtual magnons having momenta k < q. Such;corrections cannot be treated in the standard RG approach but can be;described by both 1/S and 1/N expansions. The results of these;expansions can be successfully extrapolated to T = T-M, yielding the;correct weight of static spin fluctuations, determined by the O(3);symmetry. For the longitudinal susceptibility, the summation of leading;terms of the 1/S expansion within the parquet approach allows us to;fulfill the sum rule for the weights of transverse and longitudinal;fluctuations in a broad temperature region below T-M outside the;critical regime. We also discuss the effect of longitudinal spin;fluctuations on the (sublattice) magnetization of layered systems.;Katanin, Andrey/J-4706-2013;Katanin, Andrey/0000-0003-1574-657X;0;0;0;0;0;1098-0121;WOS:000312693900002;;;J;Liu, Jingbo;Mendis, Rajind;Mittleman, Daniel M.;Designer reflectors using spoof surface plasmons in the terahertz range;PHYSICAL REVIEW B;86;24;241405;10.1103/PhysRevB.86.241405;DEC 21 2012;2012;We show that spoof surface plasmons can be used to control the;reflection of terahertz radiation at the output facet of a;parallel-plate waveguide. Using a periodic groove pattern on the output;face, reflectivity approaching 100% can be achieved within a limited;spectral range. Unlike the conventional geometry for plasmon-enhanced;transmission, this approach enables a unique method for studying the;coupling between the guided mode and the surface plasmon through;angle-dependent measurement of the plasmon-mediated reflection. A simple;model incorporating the surface plasmon coupling to the waveguide mode;can adequately explain all of the observed phenomena, including the;observed Goos-Hanchen shift in the reflected beam. DOI:;10.1103/PhysRevB.86.241405;2;0;0;0;2;1098-0121;WOS:000312697500001;;;J;Sato, Toshihiro;Hattori, Kazumasa;Tsunetsugu, Hirokazu;Transport criticality at the Mott transition in a triangular-lattice;Hubbard model;PHYSICAL REVIEW B;86;23;235137;10.1103/PhysRevB.86.235137;DEC 21 2012;2012;We study electric transport near the Mott metal-insulator transition in;a triangular-lattice Hubbard model at half filling. We calculate optical;conductivity sigma(omega) based on a cellular dynamical mean-field;theory including vertex corrections inside the cluster. Near the Mott;critical end point, a Drude analysis in the metallic region suggests;that the change in the Drude weight is important rather than that in the;transport scattering rate for the Mott transition. In the insulating;region, there emerges an "in-gap" peak in sigma(omega) at low omega near;the Mott transition, and this smoothly connects to the Drude peak in the;metallic region with decreasing Coulomb repulsion. We find that the;weight of these peaks exhibits a power-law behavior upon controlling;Coulomb repulsion at the critical temperature. The obtained critical;exponent suggests that conductivity does not correspond to magnetization;or energy density of the Ising universality class in contrast to several;previous works. DOI: 10.1103/PhysRevB.86.235137;Hattori, Kazumasa/B-2554-2013;1;0;0;0;1;1098-0121;WOS:000312694800001;;;J;Schaffer, Robert;Bhattacharjee, Subhro;Kim, Yong Baek;Quantum phase transition in Heisenberg-Kitaev model;PHYSICAL REVIEW B;86;22;224417;10.1103/PhysRevB.86.224417;DEC 21 2012;2012;We explore the nature of the quantum phase transition between a;magnetically ordered state with collinear spin pattern and a gapless;Z(2) spin liquid in the Heisenberg-Kitaev model. We construct a slave;particle mean-field theory for the Heisenberg-Kitaev model in terms of;complex fermionic spinons. It is shown that this theory, formulated in;the appropriate basis, is capable of describing the Kitaev spin liquid;as well as the transition between the gapless Z(2) spin liquid and the;so-called stripy antiferromagnet. Within our mean-field theory, we find;a discontinuous transition from the Z(2) spin liquid to the stripy;antiferromagnet. We argue that subtle spinon confinement effects,;associated with the instability of gapped U(1) spin liquid in two;spatial dimensions, play an important role at this transition. The;possibility of an exotic continuous transition is briefly addressed.;13;0;0;0;13;1098-0121;WOS:000312693900003;;;J;Schaich, W. L.;Puscasu, Irina;Tuning infrared emission from microstrip arrays;PHYSICAL REVIEW B;86;24;245423;10.1103/PhysRevB.86.245423;DEC 21 2012;2012;Earlier work has shown that a narrow-frequency-band, wide-angle emission;is produced by an array of metal patches supported on a thin dielectric;layer covering a ground plane. The modes responsible for this emission;are local plasmons trapped under the metal patches. As the dielectric;layer thickness, h(d), is increased, the resonant emission fades in;strength because the plasmon modes can no longer be trapped under a;single patch. Further increases in h(d), making it comparable to the;light wavelength in the dielectric layer, lead to a collection of new;emission peaks. These are narrower than the one peak found for small;h(d) but they are not well separated. We have found that some of these;peaks can be suppressed over a narrow range of h(d). This leaves one;with well-separated, narrow-band emission peaks. We have identified the;physical mechanism for this selective suppression of emission peaks.;DOI: 10.1103/PhysRevB.86.245423;0;0;0;0;0;1098-0121;WOS:000312697500005;;;J;Teperik, T. V.;Degiron, A.;Design strategies to tailor the narrow plasmon-photonic resonances in;arrays of metallic nanoparticles;PHYSICAL REVIEW B;86;24;245425;10.1103/PhysRevB.86.245425;DEC 21 2012;2012;Arrays of metallic nanoparticles can support mixed plasmon-photonic;resonances known as lattice surface modes. Their properties are well;known, but a general strategy to control their properties is still;lacking. In this article, we offer a perspective on the formation of;these modes and show that their excitation depends on constructive and;destructive interferences between the excitation field and the light;scattered by the resonant nanoparticles. It is therefore possible to;design the response of the system through a careful choice of the;excitation conditions and/or by tuning the polarizability of the;particles forming the periodic arrays. DOI: 10.1103/PhysRevB.86.245425;10;0;0;0;10;1098-0121;WOS:000312697500007;;;J;Thakurathi, Manisha;Sen, Diptiman;Dutta, Amit;Fidelity susceptibility of one-dimensional models with twisted boundary;conditions;PHYSICAL REVIEW B;86;24;245424;10.1103/PhysRevB.86.245424;DEC 21 2012;2012;Recently it has been shown that the fidelity of the ground state of a;quantum many-body system can be used todetect its quantum critical;points (QCPs). If g denotes the parameter in the Hamiltonian with;respect to which the fidelity is computed, we find that for;one-dimensional models with large but finite size, the fidelity;susceptibility chi(F) can detect a QCP provided that the correlation;length exponent satisfies nu < 2. We then show that chi(F) can be used;to locate a QCP even if nu >= 2 if we introduce boundary conditions;labeled by a twist angle N theta, where N is the system size. If the QCP;lies at g = 0, we find that if N is kept constant, chi(F) has a scaling;form given by chi(F) similar to theta(-2/nu) f (g/theta(1/nu)) if theta;<< 2 pi/N. We illustrate this both in a tight-binding model of fermions;with a spatially varying chemical potential with amplitude h and period;2q in which nu = q, and in a XY spin-1/2 chain in which nu = 2. Finally;we show that when q is very large, the model has two additional QCPs at;h = +/- 2 which cannot be detected by studying the energy spectrum but;are clearly detected by chi(F). The peak value and width of chi(F) seem;to scale as nontrivial powers of q at these QCPs. We argue that these;QCPs mark a transition between extended and localized states at the;Fermi energy. DOI: 10.1103/PhysRevB.86.245424;3;0;0;0;3;1098-0121;WOS:000312697500006;;;J;Thalmeier, Peter;Akbari, Alireza;Inelastic magnetic scattering effect on local density of states of;topological insulators;PHYSICAL REVIEW B;86;24;245426;10.1103/PhysRevB.86.245426;DEC 21 2012;2012;Magnetic ions such as Fe, Mn, and Co with localized spins may be;adsorbed on the surface of topological insulators such as Bi2Se3. They;form scattering centers for the helical surface states which have a;Dirac cone dispersion as long as the local spins are disordered.;However, the local density of states (LDOS) may be severely modified by;the formation of bound states. Commonly, only elastic scattering due to;normal and exchange potentials of the adatom is assumed. Magnetization;measurements show, however, that considerable magnetic single-ion;anisotropies exist which lead to a splitting of the local impurity spin;states, resulting in a singlet ground state. Therefore inelastic;scattering processes of helical Dirac electrons become possible, as;described by a dynamical local self-energy of second order in the;exchange interaction. The self energy influences bound-state formation;and leads to significant new anomalies in the LDOS at low energies and;low temperatures, which we calculate within the T-matrix approach. We;propose that they may be used for spectroscopy of local impurity spin;states by appropriate tuning of the chemical potential and magnetic;field. DOI: 10.1103/PhysRevB.86.245426;Akbari, Alireza/A-3738-2012;0;0;0;0;0;1098-0121;WOS:000312697500008;;;J;Ungier, W.;Wilamowski, Z.;Jantsch, W.;Spin-orbit force due to Rashba coupling at the spin resonance condition;PHYSICAL REVIEW B;86;24;245318;10.1103/PhysRevB.86.245318;DEC 21 2012;2012;We analyze the effect of Rashba type of spin-orbit (SO) coupling on the;electron dynamics and the rf electrical conductivity. We show that in;addition to the momentum current an additional SO current occurs which;can be attributed to a SO contribution to the electric Lorentz force.;This Rashba SO force is proportional to the time derivative of the;electron magnetization. Therefore, in a static electromagnetic field SO;interaction does not affect the electric or the spin current. Applying;an rf electric current, however, an rf magnetization can be efficiently;induced via the rf Rashba field. Thus, at the Larmor frequency a;characteristic current induced electron spin resonance occurs. There the;absorbed electric power is efficiently converted into magnetic energy.;DOI: 10.1103/PhysRevB.86.245318;1;0;0;0;1;1098-0121;WOS:000312697500003;;;J;Chen, Xie;Wen, Xiao-Gang;Chiral symmetry on the edge of two-dimensional symmetry protected;topological phases;PHYSICAL REVIEW B;86;23;235135;10.1103/PhysRevB.86.235135;DEC 20 2012;2012;Symmetry protected topological (SPT) states are short-range entangled;states with symmetry. The boundary of a SPT phases has either gapless;excitations or degenerate ground states, around a gapped bulk. Recently,;we proposed a systematic construction of SPT phases in interacting;bosonic systems, however it is not very clear what is the form of the;low-energy excitations on the gapless edge. In this paper, we answer;this question for two-dimensional (2D) bosonic SPT phases with Z(N) and;U(1) symmetry. We find that while the low-energy modes of the gapless;edges are nonchiral, symmetry acts on them in a "chiral" way, i.e., acts;on the right movers and the left movers differently. This special;realization of symmetry protects the gaplessness of the otherwise;unstable edge states by prohibiting a direct scattering between the left;and right movers. Moreover, understanding of the low-energy effective;theory leads to experimental predictions about the SPT phases. In;particular, we find that all the 2D U(1) SPT phases have even integer;quantized Hall conductance. DOI: 10.1103/PhysRevB.86.235135;12;1;1;0;12;1098-0121;WOS:000312694400001;;;J;Croy, Alexander;Midtvedt, Daniel;Isacsson, Andreas;Kinaret, Jari M.;Nonlinear damping in graphene resonators;PHYSICAL REVIEW B;86;23;235435;10.1103/PhysRevB.86.235435;DEC 20 2012;2012;Based on a continuum mechanical model for single-layer graphene, we;propose and analyze a microscopic mechanism for dissipation in;nanoelectromechanical graphene resonators. We find that coupling between;flexural modes and in-plane phonons leads to linear and nonlinear;damping of out-of-plane vibrations. By tuning external parameters such;as bias and ac voltages, one can cross over from a linear-to a;nonlinear-damping dominated regime. We discuss the behavior of the;effective quality factor in this context. DOI:;10.1103/PhysRevB.86.235435;Isacsson, Andreas/A-6932-2008; Croy, Alexander/D-4149-2013;Croy, Alexander/0000-0001-9296-9350;13;1;0;0;13;1098-0121;WOS:000312694400004;;;J;Juarez-Reyes, L.;Pastor, G. M.;Stepanyuk, V. S.;Tuning substrate-mediated magnetic interactions by external surface;charging: Co and Fe impurities on Cu(111);PHYSICAL REVIEW B;86;23;235436;10.1103/PhysRevB.86.235436;DEC 20 2012;2012;The substrate-mediated magnetic interactions between substitutional Co;and Fe impurities at the Cu(111) surface have been theoretically;investigated as a function of external surface charging. The;modification of the interactions as a result of the metallic screening;and charge rearrangements are determined self-consistently from first;principles by using the Green's-function Korringa-Kohn-Rostoker method.;As in the neutral Cu(111) surface, the effective magnetic exchange;coupling Delta E between impurities shows;Ruderman-Kittel-Kasuya-Yosida-like (RKKY) oscillations as a function of;the interimpurity distance. At large interimpurity distances, the;wavelength of the RKKY oscillation is not significantly affected by the;value and polarity of the external surface charge. Still, important;changes in the magnitude of Delta E are observed. For short distances,;up to fourth nearest neighbors, surface charging offers remarkable;possibilities of controlling the sign and strength of the magnetic;coupling. A nonmonotonous dependence of Delta E, including changes from;ferromagnetic to antiferromagnetic coupling, is observed as a function;of overlayer charging. The charge-induced changes in the surface;electronic structure, local magnetic moments, electronic densities of;states, and interaction energies are analyzed from a local perspective.;The resulting possibilities of manipulating the magnetic interactions in;surface nanostructures are discussed. DOI: 10.1103/PhysRevB.86.235436;2;0;0;0;2;1098-0121;WOS:000312694400005;;;J;Kurahashi, M.;Sun, X.;Yamauchi, Y.;Magnetic properties of O-2 adsorbed on Cu(100): A spin-polarized;metastable He beam study;PHYSICAL REVIEW B;86;24;245421;10.1103/PhysRevB.86.245421;DEC 20 2012;2012;Magnetic properties of O-2 adsorbed on Cu(100) were investigated by;monitoring the spin dependence in Penning ionization of metastable;He(2(3)S) under external magnetic fields of 0-5 T. A clear spin;polarization was found for the 3 sigma and 1 pi(u) orbitals of;physisorbed O-2 under external fields, while the spin polarization;disappeared when O-2 was changed into the chemisorbed state at >50 K.;The magnetic susceptibility at the surface of multilayer and monolayer;of physisorbed O-2 on Cu(100) was similar to that for the bulk liquid;O-2. Observed exchange splittings and spin polarization suggest that a;physisorbed O-2 molecule has a magnetic moment close to that for an;isolated O-2 molecule even at submonolayer coverages, while a density;functional theory calculation predicts a much reduced magnetic moment;for O-2 directly adsorbed on Cu(100). DOI: 10.1103/PhysRevB.86.245421;KURAHASHI, Mitsunori/H-2801-2011;1;0;0;0;1;1098-0121;WOS:000312696900004;;;J;Livneh, Y.;Klipstein, P. C.;Klin, O.;Snapi, N.;Grossman, S.;Glozman, A.;Weiss, E.;k . p model for the energy dispersions and absorption spectra of;InAs/GaSb type-II superlattices;PHYSICAL REVIEW B;86;23;235311;10.1103/PhysRevB.86.235311;DEC 20 2012;2012;We have fitted the k . p model derived recently by one of the authors;[Klipstein, Phys. Rev. B 81, 235314 (2010)] to experimentally measured;photoabsorption spectra at 77 and 300 K for representative InAs/GaSb;superlattices with band-gap wavelengths between 4.3 and 10.5 mu m. The;model is able to reproduce the main features of the absorption spectra,;including a strong peak from the zone boundary HH2 -> E-1 transition. We;have also used the same model to predict the band-gap wavelengths of;over 30 more superlattices, measured by photoluminescence spectroscopy.;The maximum error is 0.6 mu m, which corresponds to an uncertainty of;less than 0.4 ML in layer width. This is comparable with the;experimental uncertainty in layer widths, determined by in situ;beam-flux measurements in the growth reactor. By eliminating all terms;from the Hamiltonian, the energy contribution of which is less than the;error due to the uncertainty in layer widths, the number of unknown;fitting parameters has been reduced to six: two Luttinger parameters,;three interface parameters, and the valence band offset. The remaining;four Luttinger parameters are not independent and are determined from;the two independent ones. Our set of Luttinger parameters is close to;that reported by Lawaetz [Phys. Rev. B 4, 3460 (1971)], with a maximum;deviation in any parameter of 0.6. The interface parameters are diagonal;and have values of D-S = 3 eV angstrom, D-X = 1.3 eV angstrom, and D-Z =;1.1 eV angstrom at 77 K. The off-diagonal interface parameters alpha and;beta are too small to be fitted with any accuracy and have negligible;effect on the unpolarized photoabsorption spectra. We also propose;values for the room-temperature Luttinger and interface parameters. The;fitted unstrained InAs/GaSb band overlap is 0.142 eV. DOI:;10.1103/PhysRevB.86.235311;5;0;0;0;5;1098-0121;WOS:000312694400003;;;J;Sales, Brian C.;May, Andrew F.;McGuire, Michael A.;Stone, Matthew B.;Singh, David J.;Mandrus, David;Transport, thermal, and magnetic properties of the narrow-gap;semiconductor CrSb2;PHYSICAL REVIEW B;86;23;235136;10.1103/PhysRevB.86.235136;DEC 20 2012;2012;Resistivity, the Hall effect, the Seebeck coefficient, thermal;conductivity, heat capacity, and magnetic susceptibility data are;reported for CrSb2 single crystals. In spite of some unusual features in;electrical transport and Hall measurements below 100 K, only one phase;transition is found in the temperature range from 2 to 750 K;corresponding to long-range antiferromagnetic order below T-N;approximate to 273 K. Many of the low-temperature properties can be;explained by the thermal depopulation of carriers from the conduction;band into a low-mobility band located approximately 16 meV below the;conduction-band edge, as deduced from the Hall effect data. In analogy;with what occurs in Ge, the low-mobility band is likely an impurity;band. The Seebeck coefficient, S, is large and negative for temperatures;from 2 to 300 K ranging from approximate to -70 mu V/K at 300 K to -4500;mu V/K at 18 K. A large maximum in vertical bar S vertical bar at 18 K;is likely due to phonon drag, with the abrupt drop in vertical bar S;vertical bar below 18 K due to the thermal depopulation of the;high-mobility conduction band. The large thermal conductivity between 10;and 20 K (approximate to 350 W/m K) is consistent with this;interpretation, as are detailed calculations of the Seebeck coefficient;made using the complete calculated electronic structure. These data are;compared to data reported for FeSb2, which crystallizes in the same;marcasite structure, and FeSi, another unusual narrow-gap semiconductor.;DOI: 10.1103/PhysRevB.86.235136;Stone, Matthew/G-3275-2011; McGuire, Michael/B-5453-2009; May, Andrew/E-5897-2011; Mandrus, David/H-3090-2014;McGuire, Michael/0000-0003-1762-9406;;7;0;0;0;7;1098-0121;WOS:000312694400002;;;J;Toews, W.;Pastor, G. M.;Spin-polarized density-matrix functional theory of the single-impurity;Anderson model;PHYSICAL REVIEW B;86;24;245123;10.1103/PhysRevB.86.245123;DEC 20 2012;2012;Lattice density functional theory (LDFT) is used to investigate spin;excitations in the single-impurity Anderson model. In this method, the;single-particle density matrix gamma(ij sigma) with respect to the;lattice sites replaces the wave function as the basic variable of the;many-body problem. A recently developed two-level approximation (TLA) to;the interaction-energy functional W[gamma] is extended to systems having;spin-polarized density distributions and bond orders. This allows us to;investigate the effect of external magnetic fields and, in particular,;the important singlet-triplet gap Delta E, which determines the Kondo;temperature. Applications to finite Anderson rings and square lattices;show that the gap Delta E as well as other ground-state and;excited-state properties are very accurately reproduced. One concludes;that the spin-polarized TLA is reliable in all interaction regimes, from;weak to strong correlations, for different hybridization strengths and;for all considered impurity valence states. In this way the efficiency;of LDFT to account for challenging electron-correlation effects is;demonstrated. DOI: 10.1103/PhysRevB.86.245123;1;0;0;0;1;1098-0121;WOS:000312696900002;;;J;Weichselbaum, Andreas;Tensor networks and the numerical renormalization group;PHYSICAL REVIEW B;86;24;245124;10.1103/PhysRevB.86.245124;DEC 20 2012;2012;The full-density-matrix numerical renormalization group has evolved as a;systematic and transparent setting for the calculation of;thermodynamical quantities at arbitrary temperatures within the;numerical renormalization group (NRG) framework. It directly evaluates;the relevant Lehmann representations based on the complete basis sets;introduced by Anders and Schiller [Phys. Rev. Lett. 95, 196801 (2005)].;In addition, specific attention is given to the possible feedback from;low-energy physics to high energies by the explicit and careful;construction of the full thermal density matrix, naturally generated;over a distribution of energy shells. Specific examples are given in;terms of spectral functions (fdmNRG), time-dependent NRG (tdmNRG),;Fermi-golden-rule calculations (fgrNRG) as well as the calculation of;plain thermodynamic expectation values. Furthermore, based on the very;fact that, by its iterative nature, the NRG eigenstates are naturally;described in terms of matrix product states, the language of tensor;networks has proven enormously convenient in the description of the;underlying algorithmic procedures. This paper therefore also provides a;detailed introduction and discussion of the prototypical NRG;calculations in terms of their corresponding tensor networks. DOI:;10.1103/PhysRevB.86.245124;Weichselbaum, Andreas/I-8858-2012;Weichselbaum, Andreas/0000-0002-5832-3908;8;0;0;0;8;1098-0121;WOS:000312696900003;;;J;Yan, Jun;Jacobsen, Karsten W.;Thygesen, Kristian S.;Conventional and acoustic surface plasmons on noble metal surfaces: A;time-dependent density functional theory study;PHYSICAL REVIEW B;86;24;241404;10.1103/PhysRevB.86.241404;DEC 20 2012;2012;First-principles calculations of the conventional and acoustic surface;plasmons (CSPs and ASPs) on the (111) surfaces of Cu, Ag, and Au are;presented. The effect of s-d interband transitions on both types of;plasmons is investigated by comparing results from the local density;approximation and an orbital-dependent exchange-correlation (xc);potential that improves the position and width of the d bands. The;plasmon dispersions calculated with the latter xc potential agree well;with electron energy loss spectroscopy (EELS) experiments. For both the;CSP and ASP, the same trend of Cu < Au < Ag is found for the plasmon;energies and is attributed to the reduced screening by interband;transitions from Cu, to Au and Ag. This trend for the ASP, however,;contradicts a previous model prediction. While the ASP is seen as a weak;feature in the EELS, it can be clearly identified in the static and;dynamic dielectric band structure. DOI: 10.1103/PhysRevB.86.241404;Jacobsen, Karsten/B-3602-2009; Yan, Jun/K-3474-2012; Thygesen, Kristian /B-1062-2011;7;0;0;0;7;1098-0121;WOS:000312696900001;;;J;Euchner, H.;Pailhes, S.;Nguyen, L. T. K.;Assmus, W.;Ritter, F.;Haghighirad, A.;Grin, Y.;Paschen, S.;de Boissieu, M.;Phononic filter effect of rattling phonons in the thermoelectric;clathrate Ba8Ge40+xNi6-x;PHYSICAL REVIEW B;86;22;224303;10.1103/PhysRevB.86.224303;DEC 20 2012;2012;One of the key requirements for good thermoelectric materials is a low;lattice thermal conductivity. Here we present a combined neutron;scattering and theoretical investigation of the lattice dynamics in the;type I clathrate system Ba-Ge-Ni, which fulfills this requirement. We;observe a strong hybridization between phonons of the Ba guest atoms and;acoustic phonons of the Ge-Ni host structure over a wide region of the;Brillouin zone, which is in contrast with the frequently adopted picture;of isolated Ba atoms in Ge-Ni host cages. It occurs without a strong;decrease of the acoustic phonon lifetime, which contradicts the usual;assumption of strong anharmonic phonon-phonon scattering processes.;Within the framework of ab initio density-functional theory calculations;we interpret these hybridizations as a series of anticrossings which act;as a low-pass filter, preventing the propagation of acoustic phonons. To;highlight the effect of such a phononic low-pass filter on the thermal;transport, we compute the contribution of acoustic phonons to the;thermal conductivity of Ba8Ge40Ni6 and compare it to those of pure Ge;and a Ge-46 empty-cage model system. DOI: 10.1103/PhysRevB.86.224303;Paschen, Silke/C-3841-2014;Paschen, Silke/0000-0002-3796-0713;8;1;0;0;8;1098-0121;WOS:000312693600002;;;J;Harvey, J. -P.;Gheribi, A. E.;Chartrand, P.;Thermodynamic integration based on classical atomistic simulations to;determine the Gibbs energy of condensed phases: Calculation of the;aluminum-zirconium system;PHYSICAL REVIEW B;86;22;224202;10.1103/PhysRevB.86.224202;DEC 20 2012;2012;In this work, an in silico procedure to generate a fully coherent set of;thermodynamic properties obtained from classical molecular dynamics (MD);and Monte Carlo (MC) simulations is proposed. The procedure is applied;to the Al-Zr system because of its importance in the development of high;strength Al-Li alloys and of bulk metallic glasses. Cohesive energies of;the studied condensed phases of the Al-Zr system (the liquid phase, the;fcc solid solution, and various orthorhombic stoichiometric compounds);are calculated using the modified embedded atom model (MEAM) in the;second-nearest-neighbor formalism (2NN). The Al-Zr MEAM-2NN potential is;parameterized in this work using ab initio and experimental data found;in the literature for the AlZr3-L1(2) structure, while its predictive;ability is confirmed for several other solid structures and for the;liquid phase. The thermodynamic integration (TI) method is implemented;in a general MC algorithm in order to evaluate the absolute Gibbs energy;of the liquid and the fcc solutions. The entropy of mixing calculated;from the TI method, combined to the enthalpy of mixing and the heat;capacity data generated from MD/MC simulations performed in the;isobaric-isothermal/canonical (NPT/NVT) ensembles are used to;parameterize the Gibbs energy function of all the condensed phases in;the Al-rich side of the Al-Zr system in a CALculation of PHAse Diagrams;(CALPHAD) approach. The modified quasichemical model in the pair;approximation (MQMPA) and the cluster variation method (CVM) in the;tetrahedron approximation are used to define the Gibbs energy of the;liquid and the fcc solid solution respectively for their entire range of;composition. Thermodynamic and structural data generated from our MD/MC;simulations are used as input data to parameterize these thermodynamic;models. A detailed analysis of the validity and transferability of the;Al-Zr MEAM-2NN potential is presented throughout our work by comparing;the predicted properties obtained from this formalism with available ab;initio and experimental data for both liquid and solid phases. DOI:;10.1103/PhysRevB.86.224202;0;0;0;0;0;1098-0121;WOS:000312693600001;;;J;Hoffman, Silas;Upadhyaya, Pramey;Tserkovnyak, Yaroslav;Spin-torque ac impedance in magnetic tunnel junctions;PHYSICAL REVIEW B;86;21;214420;10.1103/PhysRevB.86.214420;DEC 20 2012;2012;Subjecting a magnetic tunnel junction (MTJ) to a spin-transfer torque;and/or electric voltage-induced magnetic anisotropy induces magnetic;precession, which can reciprocally pump current through the circuit.;This results in an ac impedance, which is sensitive to the magnetic;field applied to the MTJ. Measurement of this impedance can be used to;characterize the nature of the coupling between the magnetic free layer;and the electric input as well as a readout of the magnetic;configuration of the MTJ. DOI: 10.1103/PhysRevB.86.214420;1;0;0;0;1;1098-0121;WOS:000312674200003;;;J;Martinez, Enrique;Caro, Alfredo;Atomistic modeling of long-term evolution of twist boundaries under;vacancy supersaturation;PHYSICAL REVIEW B;86;21;214109;10.1103/PhysRevB.86.214109;DEC 20 2012;2012;Vacancy accumulation in 4 degrees {110} bcc Fe and 2 degrees {111} fcc;Cu twist boundaries (TBs) has been studied. These interfaces are;characterized by different sets of screw dislocations: two sets of;a(0)/2 < 111 > and one set of a(0)/2 < 100 > in Fe and three sets of;a(0)/6 < 112 > in Cu. We observe that vacancies agglomerate;preferentially at the misfit dislocation intersections (MDIs), where;their formation energy is lower. In bcc the dislocation structure;remains stable, but in fcc the interface rearranges itself increasing;the stacking fault area. To perform this study a kinetic Monte Carlo;algorithm coupled with the molecular dynamics code LAMMPS has been;developed. Atomic positions are relaxed at every step after an event;takes place to account for long-range strain fields. The events;considered in this work are vacancy migration hops. The rates are;calculated via harmonic transition state theory with the energy at the;saddle point obtained either by a linear approximation considering the;relaxed energy of the initial and final configurations or the;nudged-elastic band method depending on the vacancy position in the;sample. Vacancy diffusivities at both interfaces have also been;calculated. For the {110} TB in Fe the diffusivity is of the same order;of magnitude as in bulk (D-TB(Fe) = 2.60 x 10(-13) m(2)/s) while at the;{111} TB in Cu, diffusivities are two orders of magnitude larger than in;bulk (D-TB(Cu) = 2.06 x 10(-12) m(2)/s). The correlation factors at both;interfaces are extremely low (f(TB)(Fe) = 1.61 x 10(-4) and f(TB)(Cu) =;3.34 x 10(-4)), highlighting the importance of trapping sites at these;interfaces. DOI: 10.1103/PhysRevB.86.214109;3;1;0;0;3;1098-0121;WOS:000312674200002;;;J;McCash, Kevin;Srikanth, A.;Ponomareva, I.;Competing polarization reversal mechanisms in ferroelectric nanowires;PHYSICAL REVIEW B;86;21;214108;10.1103/PhysRevB.86.214108;DEC 20 2012;2012;Polarization reversal in ferroelectrics has been a subject of intense;interest for many years owing to both its scientific appeal and;practical utility. In recent years the interest has increased even;further thanks to the expectations of achieving ultrafast polarization;reversal at the nanoscale. While most of the studies up to now are;focused on the polarization reversal in ferroelectric thin films, we;report the intrinsic dynamics of ultrafast polarization reversal in;ferroelectric nanowires. Using atomistic first-principles-based;simulations, we trace the time evolution of polarization under applied;electric field to reveal the existence of two competing polarization;reversal mechanisms: (i) domain-driven and (ii) homogeneous. The;analysis of their microscopic origin allows us to postulate the;associated laws and leads to a deeper understanding of polarization;reversal dynamics in general. In addition, we find that in defect-free;nanowires the polarization reversal can occur within picoseconds, which;potentially is very promising for ultrafast memory and other;applications. DOI: 10.1103/PhysRevB.86.214108;Ponomareva, Inna/C-4067-2012;6;0;0;0;6;1098-0121;WOS:000312674200001;;;J;Silaev, M. A.;Volovik, G. E.;Topological Fermi arcs in superfluid He-3;PHYSICAL REVIEW B;86;21;214511;10.1103/PhysRevB.86.214511;DEC 20 2012;2012;We consider fermionic states bound on domain walls in a Weyl superfluid;He-3-A and on interfaces between He-3-A and a fully gapped topological;superfluid He-3-B. We demonstrate that in both cases the fermionic;spectrum contains Fermi arcs that are continuous nodal lines of energy;spectrum terminating at the projections of two Weyl points to the plane;of surface states in momentum space. The number of Fermi arcs is;determined by the index theorem that relates bulk values of the;topological invariant to the number of zero-energy surface states. The;index theorem is consistent with an exact spectrum of Bogolubov-de;Gennes equation obtained numerically, meanwhile, the quasiclassical;approximation fails to reproduce the correct number of zero modes. Thus;we demonstrate that topology describes the properties of the exact;spectrum beyond the quasiclassical approximation. DOI:;10.1103/PhysRevB.86.214511;8;0;0;0;8;1098-0121;WOS:000312674200006;;;J;Sluka, V.;Kakay, A.;Deac, A. M.;Buergler, D. E.;Hertel, R.;Schneider, C. M.;Quenched Slonczewski windmill in spin-torque vortex oscillators;PHYSICAL REVIEW B;86;21;214422;10.1103/PhysRevB.86.214422;DEC 20 2012;2012;We present a combined analytical and numerical study on double-vortex;spin-torque nano-oscillators and describe a mechanism that suppresses;the windmill modes. The magnetization dynamics is dominated by the;gyrotropic precession of the vortex in one of the ferromagnetic layers.;In the other layer, the vortex gyration is strongly damped. The;dominating layer for the magnetization dynamics is determined by the;sign of the product between sample current and the chiralities.;Measurements on Fe/Ag/Fe nanopillars support these findings. The results;open up a new perspective for building high quality-factor spin-torque;oscillators operating at selectable, well-separated frequency bands.;DOI: 10.1103/PhysRevB.86.214422;Deac, Alina/D-2961-2012; Buergler, Daniel/I-7408-2012; Kakay, Attila/B-7106-2008; Schneider, Claus/H-7453-2012;Buergler, Daniel/0000-0002-5579-4886; Kakay, Attila/0000-0002-3195-219X;;Schneider, Claus/0000-0002-3920-6255;4;0;0;0;4;1098-0121;WOS:000312674200005;;;J;Strohm, C.;Roth, T.;Detlefs, C.;van der Linden, P.;Mathon, O.;Element-selective magnetometry in ferrimagnetic erbium iron garnet;PHYSICAL REVIEW B;86;21;214421;10.1103/PhysRevB.86.214421;DEC 20 2012;2012;The emergence of a field induced canted phase below a critical;temperature is one of the characteristic properties of ferrimagnets with;two inequivalent antiferromagnetically coupled sublattices. Using x-ray;magnetic circular dichroism at the Fe K edge, we have performed element;selective magnetometry in ferrimagnetic erbium iron garnet in fields up;to 30 T. The signal from the tetrahedral Fe sites at 70 K allows the;detection of the two transitions at 10 and 23 T bounding the canted;phase and the direct observation of the reversal of the Fe-sublattice;magnetization within this phase. DOI: 10.1103/PhysRevB.86.214421;Detlefs, Carsten/B-6244-2008;Detlefs, Carsten/0000-0003-2573-2286;0;0;0;0;0;1098-0121;WOS:000312674200004;;;J;Yang, Huan;Wang, Zhenyu;Fang, Delong;Li, Sheng;Kariyado, Toshikaze;Chen, Genfu;Ogata, Masao;Das, Tanmoy;Balatsky, A. V.;Wen, Hai-Hu;Unexpected weak spatial variation in the local density of states induced;by individual Co impurity atoms in superconducting Na(Fe1-xCox)As;crystals revealed by scanning tunneling spectroscopy;PHYSICAL REVIEW B;86;21;214512;10.1103/PhysRevB.86.214512;DEC 20 2012;2012;We use spatially resolved scanning tunneling spectroscopy in;Na(Fe1-xCox)As to investigate the impurity effect induced by Co dopants.;The Co impurities are successfully identified, and the spatial;distributions of local density of state at different energies around;these impurities are investigated. It is found that the spectrum shows;negligible spatial variation at different positions near the Co;impurity, although there is a continuum of the in-gap states which lifts;the zero-bias conductance to a finite value. Our results put constraints;on the S +/- and S++ models and sharpen the debate on the role of;scattering potentials induced by the Co dopants. DOI:;10.1103/PhysRevB.86.214512;Das, Tanmoy/F-7174-2013;9;0;1;0;9;1098-0121;WOS:000312674200007;;;J;Chen, Gang;Hermele, Michael;Magnetic orders and topological phases from f-d exchange in pyrochlore;iridates;PHYSICAL REVIEW B;86;23;235129;10.1103/PhysRevB.86.235129;DEC 19 2012;2012;We study theoretically the effects of f-d magnetic exchange interaction;in the R2Ir2O7 pyrochlore iridates. The R3+ f electrons form localized;Kramers or non-Kramers doublets, while the Ir4+ d electrons are more;itinerant and feel a strong spin-orbit coupling. We construct and;analyze a minimal model capturing this physics, treating the Ir;subsystem using a Hubbard-type model. First neglecting the Hubbard;interaction, we find Weyl semimetal and Axion insulator phases induced;by the f-d exchange. Next, we find that f-d exchange can cooperate with;the Hubbard interaction to stabilize the Weyl semimetal over a larger;region of parameter space than when it is induced by d-electron;correlations alone. Applications to experiments are discussed. DOI:;10.1103/PhysRevB.86.235129;15;1;0;0;15;1098-0121;WOS:000312495500002;;;J;Hung, Ling-Yan;Wan, Yidun;String-net models with Z(N) fusion algebra;PHYSICAL REVIEW B;86;23;235132;10.1103/PhysRevB.86.235132;DEC 19 2012;2012;We study the Levin-Wen string-net model with a Z(N) type fusion algebra.;Solutions of the local constraints of this model correspond to Z(N);gauge theory and double Chern-Simons theories with quantum groups. For;the first time, we explicitly construct a spin-(N - 1)/2 model with Z(N);gauge symmetry on a triangular lattice as an exact dual model of the;string-net model with a Z(N) type fusion algebra on a honeycomb lattice.;This exact duality exists only when the spins are coupled to a Z(N);gauge field living on the links of the triangular lattice. The ungauged;Z(N) lattice spin models are a class of quantum systems that bear;symmetry-protected topological phases that may be classified by the;third cohomology group H-3(Z(N), U(1)) of Z(N). Our results apply also;to any case where the fusion algebra is identified with a finite group;algebra or a quantum group algebra. DOI: 10.1103/PhysRevB.86.235132;9;0;0;0;9;1098-0121;WOS:000312495500005;;;J;Husser, H.;Pehlke, E.;Analysis of two-photon photoemission from Si(001);PHYSICAL REVIEW B;86;23;235134;10.1103/PhysRevB.86.235134;DEC 19 2012;2012;We have applied our ab initio simulation approach for the photoemission;process at solid surfaces to calculate two-photon photoemission spectra;from the p(2 x 2)-reconstructed Si(001) surface. In this approach, the;ground-state electronic structure of the surface is obtained within;density functional theory. The subsequent time-dependent simulation is;carried through at frozen effective potential, while an optical;potential is applied to account for inelastic scattering in the excited;state. We have derived normal emission spectra for s-and p-polarized;light with photon energies in the range (h) over bar omega = 3.85-4.75;eV. The dependence of the theoretical spectra on photon energy and;polarization is analyzed and compared to experimental spectra from the;literature. To unravel the role of the unoccupied states between Fermi;energy and the vacuum level which are acting as intermediate states in;the excitation process, we investigate the expression for the two-photon;photocurrent from perturbation theory. The scattering states, which;serve as the final states of photoemission, are obtained from a;time-dependent simulation of a LEED-type experiment. The evaluation of;the dipole matrix elements allows us to identify the relevant bulk band;transitions and to address the influence of surface states. DOI:;10.1103/PhysRevB.86.235134;0;0;0;0;0;1098-0121;WOS:000312495500007;;;J;Jenkins, Gregory S.;Sushkov, Andrei B.;Schmadel, Don C.;Kim, M. -H.;Brahlek, Matthew;Bansal, Namrata;Oh, Seongshik;Drew, H. Dennis;Giant plateau in the terahertz Faraday angle in gated Bi2Se3;PHYSICAL REVIEW B;86;23;235133;10.1103/PhysRevB.86.235133;DEC 19 2012;2012;We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3;thin films capped with In2Se3. A plateau is observed in the real part of;the Faraday angle at an onset gate voltage corresponding to no band;bending at the surface, which persists into accumulation. The plateau is;two orders of magnitude flatter than the step size expected from a;single Landau level in the low-frequency limit, quantized in units of;the fine structure constant. At 8 T, the plateau extends over a range of;gate voltage that spans an electron density greater than 14 times the;quantum flux density. Both the imaginary part of the Faraday angle and;transmission measurements indicate dissipative off-axis and longitudinal;conductivity channels associated with the plateau. DOI:;10.1103/PhysRevB.86.235133;6;0;0;0;6;1098-0121;WOS:000312495500006;;;J;Maciejko, Joseph;Qi, Xiao-Liang;Karch, Andreas;Zhang, Shou-Cheng;Models of three-dimensional fractional topological insulators;PHYSICAL REVIEW B;86;23;235128;10.1103/PhysRevB.86.235128;DEC 19 2012;2012;Time-reversal invariant three-dimensional topological insulators can be;defined fundamentally by a topological field theory with a quantized;axion angle theta of 0 or pi. It was recently shown that fractional;quantized values of theta are consistent with time-reversal invariance;if deconfined, gapped, fractionally charged bulk excitations appear in;the low-energy spectrum due to strong correlation effects, leading to;the concept of a fractional topological insulator. These fractionally;charged excitations are coupled to emergent gauge fields, which ensure;that the microscopic degrees of freedom, the original electrons, are;gauge-invariant objects. A first step towards the construction of;microscopic models of fractional topological insulators is to understand;the nature of these emergent gauge theories and their corresponding;phases. In this work, we show that low-energy effective gauge theories;of both Abelian or non-Abelian type are consistent with a fractional;quantized axion angle if they admit a Coulomb phase or a Higgs phase;with gauge group broken down to a discrete subgroup. The Coulomb phases;support gapless but electrically neutral bulk excitations while the;Higgs phases are fully gapped. The Higgs and non-Abelian Coulomb phases;exhibit multiple ground states on boundaryless spatial three-manifolds;with nontrivial first homology, while the Abelian Coulomb phase has a;unique ground state. The ground-state degeneracy receives an additional;contribution on manifolds with boundary due to the induced boundary;Chern-Simons term. DOI: 10.1103/PhysRevB.86.235128;Zhang, Shou-Cheng/B-2794-2010;6;0;0;0;6;1098-0121;WOS:000312495500001;;;J;Mikheev, E.;Stolichnov, I.;De Ranieri, E.;Wunderlich, J.;Trodahl, H. J.;Rushforth, A. W.;Riester, S. W. E.;Campion, R. P.;Edmonds, K. W.;Gallagher, B. L.;Setter, N.;Magnetic domain wall propagation under ferroelectric control;PHYSICAL REVIEW B;86;23;235130;10.1103/PhysRevB.86.235130;DEC 19 2012;2012;Control of magnetic domain walls (DWs) and their propagation is among;the most promising development directions for future information-storage;devices. The well-established tools for such manipulation are the;spin-torque transfer from electrical currents and strain. The focus of;this paper is an alternative concept based on the nonvolatile;ferroelectric field effect on DWs in a ferromagnet with carrier-mediated;exchange coupling. The integrated ferromagnet/ferroelectric structure;yields two superimposed ferroic patterns strongly coupled by an electric;field. Using this coupling, we demonstrate an easy-to-form, stable,;nondestructive, and electrically rewritable switch on magnetic domain;wall propagation. DOI: 10.1103/PhysRevB.86.235130;Stolichnov, Igor/B-3331-2014; Wunderlich, Joerg/G-6918-2014;Stolichnov, Igor/0000-0003-0606-231X;;2;0;0;0;2;1098-0121;WOS:000312495500003;;;J;Yamaoka, Hitoshi;Zekko, Yumiko;Kotani, Akio;Jarrige, Ignace;Tsujii, Naohito;Lin, Jung-Fu;Mizuki, Jun'ichiro;Abe, Hideki;Kitazawa, Hideaki;Hiraoka, Nozomu;Ishii, Hirofumi;Tsuei, Ku-Ding;Electronic transitions in CePd2Si2 studied by resonant x-ray emission;spectroscopy at high pressures and low temperatures;PHYSICAL REVIEW B;86;23;235131;10.1103/PhysRevB.86.235131;DEC 19 2012;2012;Temperature and pressure dependences of the electronic structure of the;heavy-fermion system CePd2Si2 have been investigated using partial;fluorescence yield x-ray absorption spectroscopy and resonant x-ray;emission spectroscopy at the Ce L-3 edge. The temperature dependence has;also been measured for CeRh2Si2 for comparison. In both compounds Ce is;in a weakly mixed valence state at ambient pressure, mostly f(1) with a;small contribution from the f(0) component. No temperature dependence of;the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at;19 K, however, the Ce valence shows a continuous increase with pressure,;indicating pressure-induced delocalization of the 4f states. Theoretical;calculations based on the single impurity Anderson model reproduce the;experimental results well. Pressure dependence of the difference between;the ground state valence and the measured valence including the final;state effect is also discussed. DOI: 10.1103/PhysRevB.86.235131;Lin, Jung-Fu/B-4917-2011;3;0;0;0;3;1098-0121;WOS:000312495500004;;;J;Zolyomi, V.;Ivady, V.;Gali, A.;Enhancement of electron-nuclear hyperfine interaction at lattice defects;in semiconducting single-walled carbon nanotubes studied by ab initio;density functional theory calculations;PHYSICAL REVIEW B;86;23;235433;10.1103/PhysRevB.86.235433;DEC 19 2012;2012;We present a first principles study of the electron-nuclear;hyperfine-interaction (HF) in achiral single-walled carbon nanotubes;(SWCNTs). We show that while HF coupling is small in perfect nanotubes,;it is significantly enhanced near lattice defects such as vacancies and;Stone-Wales pairs. The enhancement of hyperfine coupling near the;defects varies considerably in different nanotubes which might pave the;way to simultaneously identifying the chirality of carbon nanotubes and;the defects inside them by sophisticated magnetic resonance techniques.;Charged vacancy is proposed as a candidate for solid state qubit in;semiconducting SWCNTs. DOI: 10.1103/PhysRevB.86.235433;0;0;0;0;0;1098-0121;WOS:000312495500008;;;J;Castro, M.;Gago, R.;Vazquez, L.;Munoz-Garcia, J.;Cuerno, R.;Stress-induced solid flow drives surface nanopatterning of silicon by;ion-beam irradiation;PHYSICAL REVIEW B;86;21;214107;10.1103/PhysRevB.86.214107;DEC 19 2012;2012;Ion-beam sputtering (IBS) is known to produce surface nanopatterns over;macroscopic areas on a wide range of materials. However, in spite of the;technological potential of this route to nanostructuring, the physical;process by which these surfaces self-organize remains poorly understood.;We have performed detailed experiments of IBS on Si substrates that;validate dynamical and morphological predictions from a hydrodynamic;description of the phenomenon. We introduce a systematic approach to;perform the experiments under conditions that guarantee the;applicability of a linear description, helping to clarify the;experimental framework in which theories should be tested. Among our;results, the pattern wavelength is experimentally seen to depend almost;linearly on ion energy, in agreement with existing results for other;targets that are amorphous or become so under irradiation. Our work;substantiates flow of a nanoscopically thin and highly viscous surface;layer, driven by the stress created by the ion beam, as an accurate;description of this class of systems.;Gago, Raul/C-6762-2008; VAZQUEZ, LUIS/A-1272-2009; Munoz-Garcia, Javier/C-1135-2011; Castro, Mario/A-3585-2009;Gago, Raul/0000-0003-4388-8241; VAZQUEZ, LUIS/0000-0001-6220-2810;;Castro, Mario/0000-0003-3288-6144;22;0;0;0;22;1098-0121;WOS:000312494800001;;;J;Fishman, Randy S.;Furukawa, Nobuo;Haraldsen, Jason T.;Matsuda, Masaaki;Miyahara, Shin;Identifying the spectroscopic modes of multiferroic BiFeO3;PHYSICAL REVIEW B;86;22;220402;10.1103/PhysRevB.86.220402;DEC 19 2012;2012;We have identified the modes of multiferroic BiFeO3 measured by THz and;Raman spectroscopies. Excellent agreement with the observed peaks is;obtained by including the effects of easy-axis anisotropy along the;direction of the electric polarization. By distorting the cycloidal spin;state, anisotropy splits the Psi(perpendicular to 1) mode into peaks at;20 and 21.5 cm(-1) and activates the lower Phi(+/- 2) mode at 27 cm(-1);(T = 200 K). An electromagnon is identified with the upper Psi(+/- 1);mode at 21.5 cm(-1). Our results also explain recent inelastic;neutron-scattering measurements. DOI:10.1103/PhysRevB.86.220402;Haraldsen, Jason/B-9809-2012; Fishman, Randy/C-8639-2013; Lujan Center, LANL/G-4896-2012;Haraldsen, Jason/0000-0002-8641-5412;;8;0;0;0;8;1098-0121;WOS:000312495200001;;;J;Geraedts, Scott D.;Motrunich, Olexei I.;Monte Carlo study of a U(1) x U(1) loop model with modular invariance;PHYSICAL REVIEW B;86;24;245121;10.1103/PhysRevB.86.245121;DEC 19 2012;2012;We study a U(1) x U(1) system in (2+1) dimensions with long-range;interactions and mutual statistics. The model has the same form after;the application of operations from the modular group, a property which;we call modular invariance. Using the modular invariance of the model,;we propose a possible phase diagram. We obtain a sign-free reformulation;of the model and study it in Monte Carlo. This study confirms our;proposed phase diagram. We use the modular invariance to analytically;determine the current-current correlation functions and conductivities;in all the phases in the diagram, as well as at special "fixed" points;which are unchanged by an operation from the modular group. We;numerically determine the order of the phase transitions, and find;segments of second-order transitions. For the statistical interaction;parameter theta = pi, these second-order transitions are evidence of a;critical loop phase obtained when both loops are trying to condense;simultaneously. We also measure the critical exponents of the;second-order transitions. DOI: 10.1103/PhysRevB.86.245121;1;0;0;0;1;1098-0121;WOS:000312495800003;;;J;Giering, Kay-Uwe;Salmhofer, Manfred;Self-energy flows in the two-dimensional repulsive Hubbard model;PHYSICAL REVIEW B;86;24;245122;10.1103/PhysRevB.86.245122;DEC 19 2012;2012;We study the two-dimensional repulsive Hubbard model by functional;renormalization group methods, using our recently proposed channel;decomposition of the interaction vertex. The main technical advance of;this work is that we calculate the full Matsubara frequency dependence;of the self-energy and the interaction vertex in the whole frequency;range without simplifying assumptions on its functional form, and that;the effects of the self-energy are fully taken into account in the;equations for the flow of the two-body vertex function. At Van Hove;filling, we find that the Fermi-surface deformations remain small at;fixed particle density and have a minor impact on the structure of the;interaction vertex. The frequency dependence of the self-energy,;however, turns out to be important, especially at a transition from;ferromagnetism to d-wave superconductivity. We determine;non-Fermi-liquid exponents at this transition point. DOI:;10.1103/PhysRevB.86.245122;14;0;0;0;14;1098-0121;WOS:000312495800004;;;J;Le Roux, Sebastien;Bouzid, Assil;Boero, Mauro;Massobrio, Carlo;Structural properties of glassy Ge2Se3 from first-principles molecular;dynamics;PHYSICAL REVIEW B;86;22;224201;10.1103/PhysRevB.86.224201;DEC 19 2012;2012;The structural properties of glassy Ge2Se3 were studied in the framework;of first-principles molecular dynamics by using the Becke-Lee-Yang-Parr;scheme for the treatment of the exchange-correlation functional in;density functional theory. Our results for the total neutron structure;factor and the total pair distribution function are in very good;agreement with the experimental results. When compared to the structural;description obtained for liquid Ge2Se3, glassy Ge2Se3 is found to be;characterized by a larger percentage of fourfold coordinated Ge atoms;and a lower number of miscoordinations. However, Ge-Ge homopolar bonds;inevitably occur due to the lack of Se atoms available, at this;concentration, to form GeSe4 tetrahedra. Focusing on the family of;glasses GexSe1-x, the present results allow a comparison to be carried;out in reciprocal and real space among three prototypical glassy;structures. The first was obtained at the stoichiometric composition;(glassy GeSe2), the second at a Se-rich composition (glassy GeSe4) and;the third at a Ge-rich composition (glassy Ge2Se3). All networks are;consistent with the "8 - N" rule, in particular, glassy GeSe4, which;exhibits the highest degree of chemical order. The electronic structure;of glassy Ge2Se3 has been characterized by using the Wannier localized;orbital formalism. The analysis of the Ge environment shows the presence;of dangling, ionocovalent Ge-Se, and covalent bonds, the latter related;to Ge-Ge connections. DOI: 10.1103/PhysRevB.86.224201;BOERO, Mauro/M-2358-2014;BOERO, Mauro/0000-0002-5052-2849;6;0;0;0;6;1098-0121;WOS:000312495200004;;;J;Matthews, M. J.;Castelnovo, C.;Moessner, R.;Grigera, S. A.;Prabhakaran, D.;Schiffer, P.;High-temperature onset of field-induced transitions in the spin-ice;compound Dy2Ti2O7;PHYSICAL REVIEW B;86;21;214419;10.1103/PhysRevB.86.214419;DEC 19 2012;2012;We have studied the field-dependent ac magnetic susceptibility of single;crystals of Dy2Ti2O7 spin ice along the [111] direction in the;temperature range 1.8-7 K. Our data reflect the onset of local spin-ice;order in the appearance of different field regimes. In particular, we;observe a prominent feature at approximately 1.0 T that is a precursor;of the low-temperature metamagnetic transition out of field-induced;kagome ice, below which the kinetic constraints imposed by the ice rules;manifest themselves in a substantial frequency dependence of the;susceptibility. Despite the relatively high temperatures, our results;are consistent with a monopole picture, and they demonstrate that such a;picture can give physical insight into spin-ice systems even outside the;low-temperature, low-density limit where monopole excitations are;well-defined quasiparticles.;6;2;0;0;6;1098-0121;WOS:000312494800002;;;J;Nuss, Martin;Heil, Christoph;Ganahl, Martin;Knap, Michael;Evertz, Hans Gerd;Arrigoni, Enrico;von der Linden, Andwolfgang;Steady-state spectra, current, and stability diagram of a quantum dot: A;nonequilibrium variational cluster approach;PHYSICAL REVIEW B;86;24;245119;10.1103/PhysRevB.86.245119;DEC 19 2012;2012;We calculate steady-state properties of a strongly correlated quantum;dot under voltage bias by means of nonequilibrium cluster perturbation;theory and the nonequilibrium variational cluster approach,;respectively. Results for the steady-state current are benchmarked;against data from accurate matrix product state based time evolution. We;show that for low to medium interaction strength, nonequilibrium cluster;perturbation theory already yields good results, while for higher;interaction strength the self-consistent feedback of the nonequilibrium;variational cluster approach significantly enhances the accuracy. We;report the current-voltage characteristics for different interaction;strengths. Furthermore we investigate the nonequilibrium local density;of states of the quantum dot and illustrate that within the variational;approach a linear splitting and broadening of the Kondo resonance is;predicted which depends on interaction strength. Calculations with;applied gate voltage, away from particle-hole symmetry, reveal that the;maximum current is reached at the crossover from the Kondo regime to the;doubly occupied or empty quantum dot. Obtained stability diagrams;compare very well to recent experimental data [A. V. Kretinin et al.,;Phys. Rev. B 84, 245316 (2011)]. DOI: 10.1103/PhysRevB.86.245119;Knap, Michael/H-3344-2011; Arrigoni, Enrico/E-4507-2012; Nuss, Martin/J-5674-2014;Knap, Michael/0000-0002-7093-9502; Arrigoni, Enrico/0000-0002-1347-3080;;;7;0;0;0;7;1098-0121;WOS:000312495800001;;;J;Rottler, Andreas;Krueger, Benjamin;Heitmann, Detlef;Pfannkuche, Daniela;Mendach, Stefan;Route towards cylindrical cloaking at visible frequencies using an;optimization algorithm;PHYSICAL REVIEW B;86;24;245120;10.1103/PhysRevB.86.245120;DEC 19 2012;2012;We derive a model based on the Maxwell-Garnett effective-medium theory;that describes a cylindrical cloaking shell composed of metal rods which;are radially aligned in a dielectric host medium. We propose and;demonstrate a minimization algorithm that calculates for given material;parameters the optimal geometrical parameters of the cloaking shell such;that its effective optical parameters fit the best to the required;permittivity distribution for cylindrical cloaking. By means of;sophisticated full-wave simulations we find that a cylindrical cloak;with good performance using silver as the metal can be designed with our;algorithm for wavelengths in the red part of the visible spectrum (623;nm < lambda < 773 nm). We also present a full-wave simulation of such a;cloak at an exemplary wavelength of lambda = 729 nm (h omega = 1.7 eV);which indicates that our model is useful to find design rules of cloaks;with good cloaking performance. Our calculations investigate a structure;that is easy to fabricate using standard preparation techniques and;therefore pave the way to a realization of guiding light around an;object at visible frequencies, thus rendering it invisible. DOI:;10.1103/PhysRevB.86.245120;Krueger, Benjamin/B-7466-2009;Krueger, Benjamin/0000-0001-8502-368X;0;0;0;0;0;1098-0121;WOS:000312495800002;;;J;Tokiwa, Y.;Huebner, S. -H.;Beck, O.;Jeevan, H. S.;Gegenwart, P.;Unique phase diagram with narrow superconducting dome in;EuFe2(As1-xPx)(2) due to Eu2+ local magnetic moments;PHYSICAL REVIEW B;86;22;220505;10.1103/PhysRevB.86.220505;DEC 19 2012;2012;The interplay between superconductivity and Eu2+ magnetic moments in;EuFe2(As1-xPx)(2) is studied with electrical resistivity measurements;under hydrostatic pressure on x = 0.13 and x = 0.18 single crystals. We;can map hydrostatic pressure to chemical pressure x and show that;superconductivity is confined to a very narrow range 0.18 <= x <= 0.23;in the phase diagram, beyond which ferromagnetic (FM) Eu ordering;suppresses superconductivity. The change from antiferro- to FM Eu;ordering at the latter concentration coincides with a Lifshitz;transition and the complete depression of iron magnetic order. DOI:;10.1103/PhysRevB.86.220505;6;0;0;0;6;1098-0121;WOS:000312495200002;;;J;Tran Doan Huan;Amsler, Maximilian;Vu Ngoc Tuoc;Willand, Alexander;Goedecker, Stefan;Low-energy structures of zinc borohydride Zn(BH4)(2);PHYSICAL REVIEW B;86;22;224110;10.1103/PhysRevB.86.224110;DEC 19 2012;2012;We present a systematic study of the low-energy structures of zinc;borohydride, a crystalline material proposed for the purpose of hydrogen;storage. In addition to previously proposed structures, many new;low-energy structures of zinc borohydride are found by utilizing;theminima-hopping method. We identify a new dynamically stable structure;which belongs to the I4(1)22 space group as the lowest-energy phase of;zinc borohydride at low temperatures. A low transition barrier between;I4(1)22 and P1, the two lowest-lying phases of zinc borohydride, is;predicted, implying that a coexistence of low-energy phases of zinc;borohydride is possible at ambient conditions. An analysis based on the;simulated x-ray-diffraction pattern reveals that the I4(1)22 structure;exhibits the same major features as the experimentally synthesized zinc;borohydride samples. DOI: 10.1103/PhysRevB.86.224110;Amsler, Maximilian/H-4718-2013; Tran, Huan/K-3587-2013;Tran, Huan/0000-0002-8093-9426;4;0;0;0;4;1098-0121;WOS:000312495200003;;;J;van den Berg, T. L.;Raymond, L.;Verga, A.;Enhanced spin Hall effect in strong magnetic disorder;PHYSICAL REVIEW B;86;24;245420;10.1103/PhysRevB.86.245420;DEC 19 2012;2012;We consider a two-dimensional electron gas in an inversion asymmetric;layer and in the presence of spatially distributed magnetic impurities.;We investigate the relationship between the geometrical properties of;the wave function and the system's spin-dependent transport properties.;A localization transition, arising when disorder is increased, is;exhibited by the appearance of a fractal state with finite inverse;participation ratio. Below the transition, interference effects modify;the carrier's diffusion, as revealed by the dependence on the scattering;time of the power law exponents characterizing the spreading of a wave;packet. Above the transition, in the strong disorder regime, we find;that the states are spin polarized and localized around the impurities.;A significant enhancement of the spin current develops in this regime.;DOI: 10.1103/PhysRevB.86.245420;RAYMOND, Laurent/B-6025-2008;RAYMOND, Laurent/0000-0002-5014-1333;0;0;0;0;0;1098-0121;WOS:000312495800005;;;J;Bauer, Oliver;Mercurio, Giuseppe;Willenbockel, Martin;Reckien, Werner;Schmitz, Christoph Heinrich;Fiedler, Benjamin;Soubatch, Serguei;Bredow, Thomas;Tautz, Frank Stefan;Sokolowski, Moritz;Role of functional groups in surface bonding of planar pi-conjugated;molecules;PHYSICAL REVIEW B;86;23;235431;10.1103/PhysRevB.86.235431;DEC 18 2012;2012;The trends in the bonding mechanism of 3,4,9,10-perylenetetracarboxylic;acid dianhydride (PTCDA) to the Ag(111), Ag(100), and Ag(110) surfaces;were analyzed on the basis of data obtained from x-ray standing waves;and dispersion-corrected density functional theory. Of importance are;the attractive local O-Ag bonds on the anhydride groups. They are the;shorter, the more open the surface is, and lead even to partly repulsive;interactions between the perylene core and the surface. In parallel,;there is an increasing charge donation from the Ag surface into the pi;system of the PTCDA. This synergism explains the out-of-plane distortion;of the adsorbed PTCDA and the surface buckling. DOI:;10.1103/PhysRevB.86.235431;13;1;0;0;13;1098-0121;WOS:000312445200001;;;J;Saptsov, R. B.;Wegewijs, M. R.;Fermionic superoperators for zero-temperature nonlinear transport:;Real-time perturbation theory and renormalization group for Anderson;quantum dots;PHYSICAL REVIEW B;86;23;235432;10.1103/PhysRevB.86.235432;DEC 18 2012;2012;We study electron quantum transport through a strongly interacting;Anderson quantum dot at finite bias voltage and magnetic field at zero;temperature using the real-time renormalization group (RT-RG) in the;framework of a kinetic (generalized master) equation for the reduced;density operator. To this end, we further develop the general,;finite-temperature real-time transport formalism by introducing field;superoperators that obey fermionic statistics. This direct second;quantization in Liouville Fock space strongly simplifies the;construction of operators and superoperators that transform irreducibly;under the Anderson-model symmetry transformations. The fermionic field;superoperators naturally arise from the univalence (fermion-parity);superselection rule of quantum mechanics for the total system of quantum;dot plus reservoirs. Expressed in these field superoperators, the causal;structure of the perturbation theory for the effective time-evolution;superoperator kernel becomes explicit. Using the constraints of the;causal structure, we construct a parametrization of the exact effective;time-evolution kernel for which we analytically find the eigenvectors;and eigenvalues in terms of a minimal set of only 30 independent;coefficients. The causal structure also implies the existence of a;fermion-parity protected eigenvector of the exact Liouvillian,;explaining a recently reported result on adiabatic driving;[Contreras-Pulido et al., Phys. Rev. B 85, 075301 (2012)] and;generalizing it to arbitrary order in the tunnel coupling Gamma.;Furthermore, in the wide-band limit, the causal representation;exponentially reduces the number of diagrams for the time-evolution;kernel. The remaining diagrams can be identified simply by their;topology and are manifestly independent of the energy cutoff term by;term. By an exact reformulation of this series, we integrate out all;infinite-temperature effects, obtaining an expansion targeting only the;nontrivial, finite-temperature corrections, and the exactly conserved;transport current follows directly from the time-evolution kernel. From;this new series, the previously formulated RT-RG equations are obtained;naturally. We perform a complete one-plus-two-loop RG analysis at finite;voltage and magnetic field, while systematically accounting for the;dependence of all renormalized quantities on both the quantum dot and;reservoir frequencies. Using the second quantization in Liouville space;and symmetry restrictions, we obtain analytical RT-RG equations, which;can be solved numerically in an efficient way, and we extensively study;the model parameter space, excluding the Kondo regime where the;one-plus-two-loop approach is obviously invalid. The incorporated;renormalization effects result in an enhancement of the inelastic;cotunneling peak, even at a voltage similar to magnetic field similar to;tunnel coupling Gamma. Moreover, we find a tunnel-induced nonlinearity;of the stability diagrams (Coulomb diamonds) at finite voltage, both in;the single-electron tunneling and inelastic cotunneling regime. DOI:;10.1103/PhysRevB.86.235432;Wegewijs, Maarten/A-3512-2012;Wegewijs, Maarten/0000-0002-2972-3822;9;0;0;0;9;1098-0121;WOS:000312445200002;;;J;Tyrrell, E. J.;Smith, J. M.;Effective mass modeling of excitons in type-II quantum dot;heterostructures (vol 84, 165328, 2011);PHYSICAL REVIEW B;86;23;239905;10.1103/PhysRevB.86.239905;DEC 18 2012;2012;0;0;0;0;0;1098-0121;WOS:000312445200003;;;J;Buividovich, P. V.;Polikarpov, M. I.;Monte Carlo study of the electron transport properties of monolayer;graphene within the tight-binding model;PHYSICAL REVIEW B;86;24;245117;10.1103/PhysRevB.86.245117;DEC 18 2012;2012;We study the effect of Coulomb interaction between charge carriers on;the properties of graphene monolayer, assuming that the strength of the;interaction is controlled by the dielectric permittivity of the;substrate on which the graphene layer is placed. To this end, we;consider the tight-binding model on the hexagonal lattice coupled to the;noncompact gauge field. The action of the latter is also discretized on;the hexagonal lattice. Equilibrium ensembles of gauge field;configurations are obtained using the hybrid Monte Carlo algorithm. Our;numerical results indicate that at sufficiently strong coupling, that;is, at sufficiently small substrate dielectric permittivities epsilon;less than or similar to 4 and at sufficiently small temperatures T less;than or similar to 1 x 10(4) K, the symmetry between simple sublattices;of hexagonal lattice breaks down spontaneously and the low-frequency;conductivity gradually decreases down to 20-30% of its weak-coupling;value. On the other hand, in the weak-coupling regime (with epsilon;greater than or similar to 4), the conductivity practically does not;depend on epsilon and is close to the universal value sigma(0) = 1/4.;DOI: 10.1103/PhysRevB.86.245117;15;0;0;0;15;1098-0121;WOS:000312445700002;;;J;Cheng, Ran;Niu, Qian;Electron dynamics in slowly varying antiferromagnetic texture;PHYSICAL REVIEW B;86;24;245118;10.1103/PhysRevB.86.245118;DEC 18 2012;2012;Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM);materials with slowly varying spin texture is developed. Quite different;from the ferromagnetic (FM) case, adiabaticity in AFM texture does not;imply perfect alignment of conduction electron spins with background;profile, instead, it introduces an internal dynamics between degenerate;bands. As a result, the orbital motion of conduction electrons becomes;spin dependent and is affected by two emergent gauge fields: one of them;is the non-Abelian version of what has been discovered in FM systems;;the other leads to an anomalous velocity that has no FM counterpart. Two;examples with experimental predictions are provided. DOI:;10.1103/PhysRevB.86.245118;Niu, Qian/G-9908-2013; Cheng, Ran/M-9260-2014;Cheng, Ran/0000-0003-0166-2172;12;0;0;0;12;1098-0121;WOS:000312445700003;;;J;Cuadrado, R.;Chantrell, R. W.;Electronic and magnetic properties of bimetallic L1(0) cuboctahedral;clusters by means of fully relativistic density-functional-based;calculations;PHYSICAL REVIEW B;86;22;224415;10.1103/PhysRevB.86.224415;DEC 18 2012;2012;By means of density functional theory and the generalized gradient;approximation, we present a structural, electronic, and magnetic study;of FePt-, CoPt-, FeAu-, and FePd-based L1(0) ordered cuboctahedral;nanoparticles, with total numbers of atoms N-tot = 13, 55, 147. After a;conjugate gradient relaxation, the nanoparticles retain their L1(0);symmetry, but the small displacements of the atomic positions tune the;electronic and magnetic properties. The value of the total magnetic;moment stabilizes as the size increases. We also show that the magnetic;anisotropy energy (MAE) depends on the size as well as the position of;the Fe-atomic planes in the clusters. We address the influence on the;MAE of the surface shape, finding a small in-plane MAE for (Fe,;Co)(24)Pt-31 nanoparticles. DOI: 10.1103/PhysRevB.86.224415;7;0;0;0;7;1098-0121;WOS:000312445000002;;;J;Deisenhofer, J.;Schaile, S.;Teyssier, J.;Wang, Zhe;Hemmida, M.;von Nidda, H. -A. Krug;Eremina, R. M.;Eremin, M. V.;Viennois, R.;Giannini, E.;van der Marel, D.;Loidl, A.;Electron spin resonance and exchange paths in the orthorhombic dimer;system Sr2VO4;PHYSICAL REVIEW B;86;21;214417;10.1103/PhysRevB.86.214417;DEC 18 2012;2012;We report on susceptibility and electron spin resonance (ESR);measurements at X- and Q-band frequencies of Sr2VO4 with orthorhombic;symmetry. In this dimer system, the V4+ ions are in tetrahedral;environment and are coupled by an antiferromagnetic intradimer exchange;constant J/k(B) approximate to 100 K to form a singlet ground state;without any phase transitions between room temperature and 2 K. Based on;an extended Huckel tight-binding analysis, we identify the strongest;exchange interaction to occur between two inequivalent vanadium sites;via two intermediate oxygen ions. The ESR absorption spectra can be well;fitted by a single Lorentzian line and the temperature dependence of the;ESR intensity, and the dc susceptibility can be modeled by using the;Bleaney-Bowers approach for independent dimers. The temperature;dependence of the ESR linewidth at X-band frequency can be modeled by a;superposition of a linear increase with temperature with a slope alpha =;1.35 Oe/K and a thermally activated behavior with an activation energy;Delta/k(B) = 1418 K, both of which point to spin-phonon coupling as the;dominant relaxation mechanism in this compound.;Teyssier, Jeremie/A-6867-2013; Deisenhofer, Joachim/G-8937-2011;Deisenhofer, Joachim/0000-0002-7645-9390;3;0;0;0;3;1098-0121;WOS:000312444700001;;;J;Hsu, Chen-Hsuan;Wang, Zhiqiang;Chakravarty, Sudip;Spin dynamics of possible density wave states in the pseudogap phase of;high-temperature superconductors;PHYSICAL REVIEW B;86;21;214510;10.1103/PhysRevB.86.214510;DEC 18 2012;2012;In a recent inelastic neutron scattering experiment in the pseudogap;state of the high-temperature superconductor YBa2Cu3O6.6, an unusual;"vertical" dispersion of the spin excitations with a large in-plane;anisotropy was observed. In this paper, we discuss in detail the spin;susceptibility of the singlet d-density wave, the triplet d-density wave;as well as the more common spin density wave orders with hopping;anisotropies. From numerical calculations within the framework of random;phase approximation, we find nearly vertical dispersion relations for;spin excitations with anisotropic incommensurability at low energy omega;<= 90 meV, which are reminiscent of the experiments. At very high energy;omega >= 165 meV, we also find energy-dependent incommensurability.;Although there are some important differences between the three cases,;unpolarized neutron measurements cannot discriminate between these;alternate possibilities; the vertical dispersion, however, is a distinct;feature of all three density wave states in contrast to the;superconducting state, which shows an hour-glass shape dispersion.;0;0;0;0;0;1098-0121;WOS:000312444700003;;;J;Jain, S.;Schultheiss, H.;Heinonen, O.;Fradin, F. Y.;Pearson, J. E.;Bader, S. D.;Novosad, V.;Coupled vortex oscillations in mesoscale ferromagnetic double-disk;structures;PHYSICAL REVIEW B;86;21;214418;10.1103/PhysRevB.86.214418;DEC 18 2012;2012;Coupled resonance modes in connected ferromagnetic double-dot structures;have been investigated as a function of the overlap between the dots,;both experimentally and via micromagnetic simulations. An asymmetry is;observed in the frequency spectrum about zero field. Softening of the;magnetization during vortex core precession when the cores are near the;overlap region results in low-frequency modes and a splitting;corresponding to different polarity combinations. A range of vortex;resonance frequencies are identified that can be tuned by varying the;overlap area. This study provides insight into the control of the;dynamic response in coupled mesoscale magnetic structures.;Jain, Shikha/J-4734-2012; Novosad, Valentyn/C-2018-2014;7;0;0;0;7;1098-0121;WOS:000312444700002;;;J;Kim, Isaac H.;Perturbative analysis of topological entanglement entropy from;conditional independence;PHYSICAL REVIEW B;86;24;245116;10.1103/PhysRevB.86.245116;DEC 18 2012;2012;We use the structure of conditionally independent states to analyze the;stability of topological entanglement entropy. For the ground state of;the quantum double or Levin-Wen model, we obtain a bound on the;first-order perturbation of topological entanglement entropy in terms of;its energy gap and subsystem size. The bound decreases superpolynomially;with the size of the subsystem, provided the energy gap is nonzero. We;also study the finite-temperature stability of stabilizer models, for;which we prove a stronger statement than the strong subadditivity of;entropy. Using this statement and assuming (i) finite correlation length;and (ii) small conditional mutual information of certain configurations,;first-order perturbation effect for arbitrary local perturbation can be;bounded. We discuss the technical obstacles in generalizing these;results. DOI: 10.1103/PhysRevB.86.245116;4;0;0;0;4;1098-0121;WOS:000312445700001;;;J;Metelmann, A.;Brandes, T.;Transport through single-level systems: Spin dynamics in the;nonadiabatic regime;PHYSICAL REVIEW B;86;24;245317;10.1103/PhysRevB.86.245317;DEC 18 2012;2012;We investigate the Fano-Anderson model coupled to a large ensemble of;spins under the influence of an external magnetic field. The interaction;between the two spin systems is treated within a mean-field approach,;and we assume an anisotropic coupling between these two systems. By;using a nonadiabatic approach, we make no further approximations in the;theoretical description of our system, apart from the semiclassical;treatment. Therewith, we can include the short-time dynamics as well as;the broadening of the energy levels arising due to the coupling to the;external electronic reservoirs. We study the spin dynamics in the regime;of low and high bias. For the infinite bias case, we compare our results;to those obtained from a simpler rate equation approach, where;higher-order transitions are neglected. We show that these higher-order;terms are important in the range of low magnetic field. Additionally, we;analyze extensively the finite bias regime with methods from nonlinear;dynamics, and we discuss the possibility of switching of the large spin.;DOI: 10.1103/PhysRevB.86.245317;2;0;0;0;2;1098-0121;WOS:000312445700004;;;J;Nastar, M.;Soisson, F.;Atomistic modeling of phase transformations: Point-defect concentrations;and the time-scale problem;PHYSICAL REVIEW B;86;22;220102;10.1103/PhysRevB.86.220102;DEC 18 2012;2012;The time scale of diffusive phase transformations in alloys depends on;point-defect concentrations, which evolve with the microstructure. We;present a simple method that provides a physical time scale for;atomistic simulations of such transformations, even when performed with;constant point-defect numbers. It also gives an on-the-fly evaluation of;the real point-defect concentration, when equilibrium conditions are;fulfilled. The method is applied to kinetic Monte Carlo simulations of;precipitation in binary alloys occurring by vacancy diffusion. The;vacancy concentration is found to be very dependent on the difference in;formation energy between the matrix and the precipitates, and therefore;on the composition and volume fraction of these two phases. The effect;of the interface curvature, through a Gibbs-Thomson effect, is revealed.;A mean-field approximation is also developed for computing the;point-defect concentrations. Contrary to previous models, it takes into;account the short range order in nonideal and concentrated solutions.;Atomistic simulations and mean-field simulations are validated by direct;comparisons. DOI: 10.1103/PhysRevB.86.220102;soisson, frederic/B-2917-2009;soisson, frederic/0000-0001-6435-6119;6;0;0;0;6;1098-0121;WOS:000312445000001;;;J;Abd El-Fattah, Z. M.;Matena, M.;Corso, M.;Ormaza, M.;Ortega, J. E.;Schiller, F.;Modifying the Cu(111) Shockley surface state by Au alloying;PHYSICAL REVIEW B;86;24;245418;10.1103/PhysRevB.86.245418;DEC 17 2012;2012;The deposition of submonolayer amounts of Au onto Cu(111) results in a;Au-Cu surface alloy with temperature- and thickness-dependent;stoichiometry. Upon alloying, the characteristic Shockley state of;Cu(111) is modified, shifting to 0.53 eV binding energy for a particular;surface Au2Cu concentration, which is a very high binding energy for a;noble-metal surface. Based on a phase accumulation model analysis, we;discuss how this unusually large shift is likely reflecting an effective;increase in the topmost layer thickness of the order of, but smaller;than, the value expected from the moire undulation. DOI:;10.1103/PhysRevB.86.245418;CSIC-UPV/EHU, CFM/F-4867-2012; ortega, enrique/I-4445-2012; Corso, Martina/B-7768-2014; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000312365800013;;;J;Baledent, V.;Rullier-Albenque, F.;Colson, D.;Monaco, G.;Rueff, J. -P.;Stability of the Fe electronic structure through temperature-, doping-,;and pressure-induced transitions in the BaFe2As2 superconductors;PHYSICAL REVIEW B;86;23;235123;10.1103/PhysRevB.86.235123;DEC 17 2012;2012;We report on a survey of Fe electronic properties in the;temperature-pressure phase diagram of the Co-doped pnictides BaFe2As2;superconductors by hard x-ray absorption spectroscopy at the Fe K edge;in the high-resolution, partial fluorescence yield mode. The absorption;spectra are found remarkably stable through the temperature-induced;phase transitions while pressure leads to slight energy shift of the;main edge but not of the pre-edge. The latter effect is ascribed to the;lattice compression and band widening effects under pressure as;confirmed by multiple scattering simulations. Our results suggest that;from the Fe electronic structure point of view, doping and pressure are;equivalent ways to destabilize the magnetic phase to the advantage of;superconductivity. DOI: 10.1103/PhysRevB.86.235123;0;0;0;0;0;1098-0121;WOS:000312365200003;;;J;Bejas, Matias;Greco, Andres;Yamase, Hiroyuki;Possible charge instabilities in two-dimensional doped Mott insulators;PHYSICAL REVIEW B;86;22;224509;10.1103/PhysRevB.86.224509;DEC 17 2012;2012;Motivated by the growing evidence of the importance of charge;fluctuations in the pseudogap phase in high-temperature cuprate;superconductors, we apply a large-N expansion formulated in a path;integral representation of the two-dimensional t - J model on a square;lattice. We study all possible charge instabilities of the paramagnetic;state in leading order of the 1/N expansion. While the d-wave charge;density wave (flux phase) becomes the leading instability for various;choices of model parameters, we find that a d-wave Pomeranchuk;(electronic nematic phase) instability occurs as a next leading one. In;particular, the nematic state has a strong tendency to become;inhomogeneous. In the presence of a large second nearest-neighbor;hopping integral, the flux phase is suppressed and the electronic;nematic instability becomes leading in a high doping region. Besides;these two major instabilities, bond-order phases occur as weaker;instabilities close to half-filling. Phase separation is also detected;in a finite temperature region near half-filling. DOI:;10.1103/PhysRevB.86.224509;7;0;0;0;7;1098-0121;WOS:000312364700006;;;J;Chen, S. L.;Chen, W. M.;Buyanova, I. A.;Zeeman splitting and dynamics of an isoelectronic bound exciton near the;band edge of ZnO;PHYSICAL REVIEW B;86;23;235205;10.1103/PhysRevB.86.235205;DEC 17 2012;2012;Comprehensive time-resolved photoluminescence and magneto-optical;measurements are performed on a bound exciton (BX) line peaking at;3.3621 eV (labeled as I*). Though the energy position of I* lies within;the same energy range as that for donor bound exciton (DX) transitions,;its behavior in an applied magnetic field is found to be distinctly;different from that observed for DXs bound to either ionized or neutral;donors. An exciton bound to an isoelectronic center with a;hole-attractive local potential is shown to provide a satisfactory model;that can account for all experimental results of the I* transition. DOI:;10.1103/PhysRevB.86.235205;Chen, Weimin/J-4660-2012;Chen, Weimin/0000-0002-6405-9509;5;0;0;0;5;1098-0121;WOS:000312365200008;;;J;Chen, Zuhuang;Zou, Xi;Ren, Wei;You, Lu;Huang, Chuanwei;Yang, Yurong;Yang, Ping;Wang, Junling;Sritharan, Thirumany;Bellaiche, L.;Chen, Lang;Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin;films using planar electrodes;PHYSICAL REVIEW B;86;23;235125;10.1103/PhysRevB.86.235125;DEC 17 2012;2012;Epitaxial strain plays an important role in determining physical;properties of perovskite ferroelectric oxide thin films because of the;inherent coupling between the strain and the polarization. However, it;is very challenging to directly measure properties such as polarization;in ultrathin strained films, using traditional sandwich capacitor;devices, because of high leakage current. Hence, a planar electrode;device with different crystallographical orientations between;electrodes, which is able to measure the polarization response with;different electric field orientation, is used successfully in this work;to directly measure the in-plane polarization-electric-field (P-E);hysteresis loops in fully strained thin films. We used BiFeO3 (BFO) as a;model system and measured in-plane P-E loops not only in the;rhombohedral-like (R-like) BFO thin films but also in largely strained;BFO films exhibiting the pure tetragonal-like (T-like) phase. The exact;magnitude and direction of the spontaneous polarization vector of the;T-like phase is deduced thanks to the collection of in-plane;polarization components along different orientations. It is also shown;that the polarization vector in the R-like phase of BiFeO3 is;constrained to lie within the (1 (1) over bar 10) plane and rotates from;the [111] towards the [001] pseudocubic direction when the compressive;strain is increased from zero. At high misfit strains such as -4.4%, the;pure T-like phase is obtained and its polarization vector is constrained;to lie in the (010) plane with a significantly large in-plane component,;similar to 44 mu C/cm(2). First-principles calculations are carried out;in parallel, and provide a good agreement with the experimental results.;DOI: 10.1103/PhysRevB.86.235125;CHEN, LANG/A-2251-2011; You, Lu/H-1512-2011; Ren, Wei/D-2081-2009; HUANG, CHUANWEI/F-9858-2011; WANG, Junling/B-3596-2009; Yang, Ping/C-5612-2008; Chen, Zuhuang/E-7131-2011; Sritharan, Thirumany/G-4890-2010;WANG, Junling/0000-0003-3663-7081; Chen, Zuhuang/0000-0003-1912-6490;;8;1;0;0;8;1098-0121;WOS:000312365200005;;;J;Croitoru, M. D.;Buzdin, A. I.;Extended Lawrence-Doniach model: The temperature evolution of the;in-plane magnetic field anisotropy;PHYSICAL REVIEW B;86;22;224508;10.1103/PhysRevB.86.224508;DEC 17 2012;2012;Using the quasiclassical formalism, we provide the description of the;temperature and field-direction dependence of the in-plane upper;critical field in layered superconductors, taking into account the;interlayer Josephson coupling and the paramagnetic spin splitting. We;generalize the Lawrence-Doniach model for the case of high magnetic;fields and show that the reentrant superconductivity is naturally;described by our formalism when neglecting the Pauli pair-breaking;effect. We demonstrate that in layered superconductors the in-plane;anisotropy of the onset of superconductivity exhibits four different;temperature regimes: from the Ginzburg-Landau type in the vicinity of;the critical temperature T-c0 with anisotropies of coherence lengths, up;to the Fulde-Ferell-Larkin-Ovchinnikov type induced by the strong;interference between the modulation vector and the orbital effect. Our;results are in agreement with the experimental measurements of the;field-angle dependence of the superconducting onset temperature of the;organic compound (TMTSF)(2)ClO4. DOI: 10.1103/PhysRevB.86.224508;Buzdin, Alexander/I-6038-2013; Croitoru, Mihail/J-9934-2014;Croitoru, Mihail/0000-0002-3014-8634;3;0;0;0;3;1098-0121;WOS:000312364700005;;;J;Dhital, Chetan;Abernathy, D. L.;Zhu, Gaohua;Ren, Zhifeng;Broido, D.;Wilson, Stephen D.;Inelastic neutron scattering study of phonon density of states in;nanostructured Si1-xGex thermoelectrics;PHYSICAL REVIEW B;86;21;214303;10.1103/PhysRevB.86.214303;DEC 17 2012;2012;Inelastic neutron scattering measurements are utilized to explore;relative changes in the generalized phonon density of states of;nanocrystalline Si1-xGex thermoelectric materials prepared via;ball-milling and hot-pressing techniques. Dynamic signatures of Ge;clustering can be inferred from the data by referencing the resulting;spectra to a density functional theoretical model assuming homogeneous;alloying via the virtual-crystal approximation. Comparisons are also;presented between as-milled Si nanopowder and bulk, polycrystalline Si;where a preferential low-energy enhancement and lifetime broadening of;the phonon density of states appear in the nanopowder. Negligible;differences are however observed between the phonon spectra of bulk Si;and hot-pressed, nanostructured Si samples suggesting that changes to;the single-phonon dynamics above 4 meV play only a secondary role in the;modified heat conduction of this compound.;BL18, ARCS/A-3000-2012; Abernathy, Douglas/A-3038-2012; Ren, Zhifeng/B-4275-2014;1;0;0;0;1;1098-0121;WOS:000312364200002;;;J;Farahani, S. K. Vasheghani;Veal, T. D.;Sanchez, A. M.;Bierwagen, O.;White, M. E.;Gorfman, S.;Thomas, P. A.;Speck, J. S.;McConville, C. F.;Influence of charged-dislocation density variations on carrier mobility;in heteroepitaxial semiconductors: The case of SnO2 on sapphire;PHYSICAL REVIEW B;86;24;245315;10.1103/PhysRevB.86.245315;DEC 17 2012;2012;In highly mismatched heteroepitaxial systems, the influence of carrier-;and dislocation-density variations on carrier mobility is revealed.;Transmission electronmicroscopy reveals the variation of dislocation;density through a series of SnO2 films grown by molecular-beam epitaxy;on sapphire substrates where the lattice mismatch exceeds 11%. A;layer-by-layer parallel conduction treatment of the carrier mobility in;SnO2 epilayers is used to illustrate the dominant role of the;depth-dependent dislocation density and charge profile in determining;the film-thickness dependence of the transport properties.;Thomas, Pam/G-3532-2010; Sanchez, Ana/F-3153-2010;Sanchez, Ana/0000-0002-8230-6059;0;0;0;0;0;1098-0121;WOS:000312365800009;;;J;Ferraz, Alvaro;Kochetov, Evgeny;Comment on "Fermi surface reconstruction in hole-doped t-J models;without long-range antiferromagnetic order";PHYSICAL REVIEW B;86;24;247103;10.1103/PhysRevB.86.247103;DEC 17 2012;2012;0;0;0;0;0;1098-0121;WOS:000312365800015;;;J;Frimmer, Martin;Koenderink, A. Femius;Superemitters in hybrid photonic systems: A simple lumping rule for the;local density of optical states and its breakdown at the unitary limit;PHYSICAL REVIEW B;86;23;235428;10.1103/PhysRevB.86.235428;DEC 17 2012;2012;We theoretically investigate how the enhancement of the radiative decay;rate of a spontaneous emitter provided by coupling to an optical antenna;is modified when this "superemitter" is introduced into a complex;photonic environment that provides an enhanced local density of optical;states (LDOS) itself, such as a microcavity or stratified medium. We;show that photonic environments with increased LDOS further boost the;performance of antennas that scatter weakly, for which a simple;multiplicative LDOS lumping rule holds. In contrast, enhancements;provided by antennas close to the unitary limit, i.e., close to the;limit of maximally possible scattering strength, are strongly reduced by;an enhanced LDOS of the environment. Thus, we identify multiple;scattering in hybrid photonic systems as a powerful mechanism for LDOS;engineering. DOI: 10.1103/PhysRevB.86.235428;Koenderink, A. Femius/A-3955-2008;Koenderink, A. Femius/0000-0003-1617-5748;7;0;0;0;7;1098-0121;WOS:000312365200011;;;J;Gasparinetti, S.;Kamleitner, I.;Coherent Cooper-pair pumping by magnetic flux control;PHYSICAL REVIEW B;86;22;224510;10.1103/PhysRevB.86.224510;DEC 17 2012;2012;We introduce and discuss a scheme for Cooper-pair pumping. The scheme;relies on the coherent transfer of a superposition of charge states;across a superconducting island and is realized by adiabatic;manipulation of magnetic fluxes. Differently from previous;implementations, it does not require any modulation of electrostatic;potentials. We find a peculiar dependence of the pumped charge on the;superconducting phase bias across the pump and that an arbitrarily large;amount of charge can be pumped in a single cycle when the phase bias is;pi. We explain these features and their relation to the adiabatic;theorem. DOI: 10.1103/PhysRevB.86.224510;Gasparinetti, Simone/C-2991-2014;Gasparinetti, Simone/0000-0002-7238-693X;3;0;0;0;3;1098-0121;WOS:000312364700007;;;J;Gu, B.;Ziman, T.;Maekawa, S.;Theory of the spin Hall effect, and its inverse, in a ferromagnetic;metal near the Curie temperature;PHYSICAL REVIEW B;86;24;241303;10.1103/PhysRevB.86.241303;DEC 17 2012;2012;We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic;metals based on skew scattering via collective spin fluctuations. This;extends Kondo's theory of the anomalous Hall effect (AHE) to include;short-range spin-spin correlations. We find a relation between the ISHE;and the four-spin correlations near the Curie temperature T-C. Such;four-spin correlations do not contribute to the AHE, which relates to;the three-spin correlations. Thus our theory shows an essential;difference between the AHE and ISHE, providing an essential complement;to Kondo's classic theory of the AHE in metals. We note the relation to;skew-scattering mechanisms based on impurity scattering. Our theory can;be compared to recent experimental results by Wei et al. [Nat. Commun.;3, 1058 (2012)] for the ISHE in ferromagnetic alloys. DOI:;10.1103/PhysRevB.86.241303;Gu, Bo/B-6145-2011;Gu, Bo/0000-0003-2216-8413;1;0;0;0;1;1098-0121;WOS:000312365800003;;;J;Guedes, E. B.;Abbate, M.;Ishigami, K.;Fujimori, A.;Yoshimatsu, K.;Kumigashira, H.;Oshima, M.;Vicentin, F. C.;Fonseca, P. T.;Mossanek, R. J. O.;Core level and valence band spectroscopy of SrRuO3: Electron correlation;and covalence effects;PHYSICAL REVIEW B;86;23;235127;10.1103/PhysRevB.86.235127;DEC 17 2012;2012;We studied the electronic structure of SrRuO3 using several;spectroscopic techniques. These include ( resonant) photoemission, x-ray;absorption, and optical conductivity. The experimental results were;interpreted using an extended cluster model, which takes into account;electron correlation and the Ru 4d-O 2p covalence. The analysis shows;that this material is in the negative charge transfer regime, where the;ground state is dominated by the 4d(5) (L) under bar configuration with;an occupation of 47%. This is mainly due to the relatively large crystal;field and exchange splitting in the Ru 4d states. The electronic;structure of SrRuO3 is strongly influenced by the Ru 4d-O 2p;hybridization. Thus, the oxygen states should be explicitly considered;in the analysis of the physical properties of this system. However,;correlation effects are also important in this system giving rise to the;coherent peak in the valence band spectra. DOI:;10.1103/PhysRevB.86.235127;Mossanek, Rodrigo /E-8113-2010;1;0;0;0;1;1098-0121;WOS:000312365200007;;;J;Gull, E.;Millis, A. J.;Energetics of superconductivity in the two-dimensional Hubbard model;PHYSICAL REVIEW B;86;24;241106;10.1103/PhysRevB.86.241106;DEC 17 2012;2012;The energetics of the interplay between superconductivity and the;pseudogap in high-temperature superconductivity is examined using the;eight-site dynamical cluster approximation to the two-dimensional;Hubbard model. Two regimes of superconductivity are found: a;weak-coupling/large-doping regime in which the onset of;superconductivity causes a reduction in potential energy and an increase;in kinetic energy, and a strong-coupling regime in which;superconductivity is associated with an increase in potential energy and;a decrease in kinetic energy. The crossover between the two regimes is;found to coincide with the boundary of the normal-state pseudogap,;providing further evidence of the unconventional nature of;superconductivity in the pseudogap regime. However, the absence, in the;strongly correlated but nonsuperconducting state, of discernibly;nonlinear response to an applied pairing field suggests that resonating;valence bond physics is not the origin of the kinetic-energy driven;superconductivity. DOI: 10.1103/PhysRevB.86.241106;Gull, Emanuel/A-2362-2010;Gull, Emanuel/0000-0002-6082-1260;10;1;0;0;10;1098-0121;WOS:000312365800001;;;J;Hiltscher, Bastian;Governale, Michele;Koenig, Juergen;ac Josephson transport through interacting quantum dots;PHYSICAL REVIEW B;86;23;235427;10.1103/PhysRevB.86.235427;DEC 17 2012;2012;We investigate the ac Josephson current through a quantum dot with;strong Coulomb interaction attached to two superconducting and one;normal lead. To this end, we perform a perturbation expansion in the;tunneling couplings within a diagrammatic real-time technique. The ac;Josephson current is connected to the reduced density matrix elements;that describe superconducting correlations induced on the quantum dot;via proximity effect. We analyze the dependence of the ac signal on the;level position of the quantum dot, the charging energy, and the applied;bias voltages. DOI: 10.1103/PhysRevB.86.235427;2;0;0;0;2;1098-0121;WOS:000312365200010;;;J;Kambe, Takashi;He, Xuexia;Takahashi, Yosuke;Yamanari, Yusuke;Teranishi, Kazuya;Mitamura, Hiroki;Shibasaki, Seiji;Tomita, Keitaro;Eguchi, Ritsuko;Goto, Hidenori;Takabayashi, Yasuhiro;Kato, Takashi;Fujiwara, Akihiko;Kariyado, Toshikaze;Aoki, Hideo;Kubozono, Yoshihiro;Synthesis and physical properties of metal-doped picene solids;PHYSICAL REVIEW B;86;21;214507;10.1103/PhysRevB.86.214507;DEC 17 2012;2012;We report electronic-structure and physical properties of metal-doped;picene as well as selective synthesis of the phase that exhibits 18-K;superconducting transition. First, Raman scattering is used to;characterize the number of electrons transferred from the dopants to;picene molecules, where a softening of Raman scattering peaks enables us;to determine the number of transferred electrons. From this, we have;identified that three electrons are transferred to each picene molecule;in the superconducting doped picene solids. Second, we report pressure;dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase;shows a negative pressure dependence, while the 18-K phase exhibits a;positive pressure dependence which can not be understood with a simple;phonon mechanism of BCS superconductivity. Third, we report a synthesis;method for superconducting K(3)picene by a solution process with;monomethylamine CH3NH2. This method enables us to prepare selectively;the K(3)picene sample exhibiting 18-K superconducting transition. The;method for preparing K(3)picene with T-c = 18 K found here may;facilitate clarification of the mechanism of superconductivity.;Takabayashi, Yasuhiro/A-5014-2013; EGUCHI, Ritsuko/H-4129-2011; Aoki, Hideo/A-2525-2009; KUBOZONO, Yoshihiro/B-2091-2011; KAMBE, Takashi/B-2117-2011;Takabayashi, Yasuhiro/0000-0002-3493-2194; Aoki,;Hideo/0000-0002-7332-9355;;14;0;0;0;14;1098-0121;WOS:000312364200006;;;J;Kandpal, Hem C.;Koepernik, Klaus;Richter, Manuel;Strong magnetic anisotropy of chemically bound Co dimers in a graphene;sheet;PHYSICAL REVIEW B;86;23;235430;10.1103/PhysRevB.86.235430;DEC 17 2012;2012;The magnetism of cobalt atoms and dimers bound by single vacancies in a;graphene sheet is investigated by means of relativistic density;functional calculations. In both cases, local magnetic moments are;formed despite strong chemical binding. While orbital magnetism is;suppressed in the Co atoms, magnetic bistability with an anisotropy;barrier of about 50 meV is possible in the chemically bound Co dimers.;The feasibility of their preparation is demonstrated and a general;construction principle for similar (sub-)nanometer size magnets is;proposed. DOI: 10.1103/PhysRevB.86.235430;3;0;0;0;3;1098-0121;WOS:000312365200013;;;J;Kawai, Shigeki;Glatzel, Thilo;Such, Bartosz;Koch, Sascha;Baratoff, Alexis;Meyer, Ernst;Energy dissipation in dynamic force microscopy on KBr(001) correlated;with atomic-scale adhesion phenomena;PHYSICAL REVIEW B;86;24;245419;10.1103/PhysRevB.86.245419;DEC 17 2012;2012;Atomic-scale adhesion phenomena between KBr tip and sample were studied;by dynamic force spectroscopy with a small amplitude of down to 285 pm;at room temperature. The high-resonance frequency of the second flexural;mode of a silicon cantilever (approximate to 1 MHz) suppresses an;apparent dissipation energy caused by undesirable mechanical couplings;in between the cantilever and the dither piezo actuator. Further, the;Joule heating dissipation contribution and the noise-equivalent;dissipation energy were reduced by setting a smaller amplitude. Usage of;a high resonance frequency and a smaller amplitude enables us to perform;highly sensitive measurements of the atomic-scale adhesion and the;tip-instability-related energy dissipation. Tip changes, caused by;tip-sample interactions and thermal energy, resulted in three different;dissipation energy levels (Delta E-ts approximate to 25 meV/cycle). This;infrequent change of the tip apex condition often prevents a stable;imaging with small amplitude. Our systematic measurement shows that the;atomic adhesion is caused mainly in the tip itself, and a sharper and;softer tip induced a larger energy dissipation. DOI:;10.1103/PhysRevB.86.245419;Glatzel, Thilo/F-2639-2011; Kawai, Shigeki/C-8517-2012;2;0;0;0;2;1098-0121;WOS:000312365800014;;;J;Kim, Younghyun;Cano, Jennifer;Nayak, Chetan;Majorana zero modes in semiconductor nanowires in contact with;higher-T-c superconductors;PHYSICAL REVIEW B;86;23;235429;10.1103/PhysRevB.86.235429;DEC 17 2012;2012;We analyze the prospects for stabilizing Majorana zero modes in;semiconductor nanowires that are proximity coupled to higher-temperature;superconductors. We begin with the case of iron pnictides which, though;they are s-wave superconductors, are believed to have superconducting;gaps that change sign. We then consider the case of cuprate;superconductors. We show that a nanowire on a steplike surface,;especially in an orthorhombic material such as YBCO, can support;Majorana zero modes at an elevated temperature. DOI:;10.1103/PhysRevB.86.235429;1;0;0;0;1;1098-0121;WOS:000312365200012;;;J;Kovylina, Miroslavna;Morales, Rafael;Labarta, Amilcar;Batlle, Xavier;Magnetization reversal in Ni/FeF2 heterostructures with the coexistence;of positive and negative exchange bias;PHYSICAL REVIEW B;86;22;224414;10.1103/PhysRevB.86.224414;DEC 17 2012;2012;Magnetization reversal mechanisms are studied in Ni/FeF2;heterostructures with the coexistence of positive and negative exchanged;bias (PEB/NEB), showing single and double hysteresis loops (DHL) in;magnetoresistance measurements. Micromagnetic simulations show that PEB;and NEB domains of a minimum critical size must be introduced in order;to reproduce the occurrence of DHLs. The simulations reveal that;different magnetic configurations and, hence, different magnetization;reversal processes take place in a ferromagnet (FM) on top of minority;PEB domains that are either greater or smaller than the critical size.;In particular, for the case of DHLs, core reversal of a depthwise domain;wall is observed over minority PEB domains when the magnetic field is;decreased from positive saturation. As the field is further decreased, a;complex domain-wall evolution takes place in the FM, including the;dependences of the domain-wall width and domain size on the magnetic;field and distance from the antiferromagnet (AF). These effects should;be taken into account when the domain size is estimated from data;measured by depth-dependent techniques since they average the;distribution of domain sizes in the FM for different distances from the;AF. DOI: 10.1103/PhysRevB.86.224414;Labarta, Amilcar/B-4539-2012; Batlle, Xavier/H-5795-2012;Labarta, Amilcar/0000-0003-0904-4678;;2;0;0;0;2;1098-0121;WOS:000312364700004;;;J;Kuga, Kentaro;Morrison, Gregory;Treadwell, LaRico;Chan, Julia Y.;Nakatsuji, Satoru;Magnetic order induced by Fe substitution of Al site in the;heavy-fermion systems alpha-YbAlB4 and beta-YbAlB4;PHYSICAL REVIEW B;86;22;224413;10.1103/PhysRevB.86.224413;DEC 17 2012;2012;beta-YbAlB4 is a heavy-fermion superconductor that exhibits a quantum;criticality without tuning at zero field and under ambient pressure. We;have succeeded in substituting Fe for Al in beta-YbAlB4 as well as the;polymorphous compound alpha-YbAlB4, which in contrast has a heavy;Fermi-liquid ground state. Full structure determination by;single-crystal x-ray diffraction confirmed no change in crystal;structure for both alpha- and beta-YbAlB4, in addition to volume;contraction with Fe substitution. Our measurements of the magnetization;and specific heat indicate that both alpha-YbAl0.93Fe0.07B4 and;beta-YbAl0.94Fe0.06B4 exhibit a magnetic order, most likely of a canted;antiferromagnetic type, at 7 similar to 9 K. The increase in the entropy;as well as the decrease in the antiferromagnetic Weiss temperature with;the Fe substitution in both systems indicates that the chemical pressure;due to the Fe substitution suppresses the Kondo temperature and induces;the magnetism. DOI: 10.1103/PhysRevB.86.224413;Chan, Julia/C-5392-2008;2;0;0;0;2;1098-0121;WOS:000312364700003;;;J;Lee, Yu-Wen;Lee, Yu-Li;Chung, Chung-Hou;Nonequilibrium noise correlations in a point contact of helical edge;states;PHYSICAL REVIEW B;86;23;235121;10.1103/PhysRevB.86.235121;DEC 17 2012;2012;We investigate theoretically the nonequilibrium finite-frequency current;noise in a four-terminal quantum point contact of interacting helical;edge states at a finite bias voltage. Special focus is put on the;effects of the single-particle and two-particle scattering between the;two helical edge states on the fractional charge quasiparticle;excitations shown in the nonequilibrium current noise spectra. Via the;Keldysh perturbative approach, we find that the effects of the;single-particle and the two-particle scattering processes on the current;noise depend sensitively on the Luttinger liquid parameter. Moreover,;the Fano factors for the auto-and cross correlations of the currents in;the terminals are distinct from the ones for tunneling between the;chiral edge states in the quantum Hall liquid. The current noise spectra;in the single-particle-scattering-dominated and the;two-particle-scattering-dominated regime are shown. Experimental;implications of our results on the transport through the helical edges;in two-dimensional topological insulators are discussed. DOI:;10.1103/PhysRevB.86.235121;6;0;0;0;6;1098-0121;WOS:000312365200001;;;J;Leppert, L.;Albuquerque, R. Q.;Kuemmel, S.;Gold-platinum alloys and Vegard's law on the nanoscale;PHYSICAL REVIEW B;86;24;241403;10.1103/PhysRevB.86.241403;DEC 17 2012;2012;The structure of gold-platinum nanoparticles is heavily debated as;theoretical calculations predict core-shell particles, whereas x-ray;diffraction experiments frequently detect randomly mixed alloys. By;calculating the structure of gold-platinum nanoparticles with diameters;of up to approximate to 3.5 nm and simulating their x-ray diffraction;patterns, we show that these seemingly opposing findings need not be in;contradiction: Shells of gold are hardly visible in usual x-ray;scattering, and the interpretation of Vegard's law is ambiguous on the;nanoscale. DOI: 10.1103/PhysRevB.86.241403;Albuquerque, Rodrigo/A-8433-2013; Kummel, Stephan/K-5634-2014;4;0;0;0;4;1098-0121;WOS:000312365800004;;;J;Lin, Chien-Hung;Sau, Jay D.;Das Sarma, S.;Zero-bias conductance peak in Majorana wires made of;semiconductor/superconductor hybrid structures;PHYSICAL REVIEW B;86;22;224511;10.1103/PhysRevB.86.224511;DEC 17 2012;2012;Motivated by a recent experimental report Mourik et al. [Science 336,;1003 (2012)] claiming the likely observation of the Majorana mode in a;semiconductor-superconductor hybrid structure, we study theoretically;the dependence of the zero-bias conductance peak associated with the;zero-energy Majorana mode in the topological superconducting phase as a;function of temperature, tunnel barrier potential, and a magnetic field;tilted from the direction of the wire for realistic wires of finite;lengths. We find that higher temperatures and tunnel barriers as well as;a large magnetic field in the direction transverse to the wire length;could very strongly suppress the zero- bias conductance peak as observed;in recent experiments. We also show that a strong magnetic field along;the wire could eventually lead to the splitting of the zero bias peak;into a doublet with the doublet energy splitting oscillating as a;function of increasing magnetic field. Our results based on the standard;theory of topological superconductivity in a semiconductor hybrid;structure in the presence of proximity-induced superconductivity,;spin-orbit coupling, and Zeeman splitting show that the recently;reported experimental data are generally consistent with the existing;theory that led to the predictions for the existence of the Majorana;modes in the semiconductor hybrid structures in spite of some apparent;anomalies in the experimental observations at first sight. We also make;a prediction for the future observation of Majorana splitting in finite;wires used in the experiments. DOI: 10.1103/PhysRevB. 86.224511;Das Sarma, Sankar/B-2400-2009;22;0;1;0;22;1098-0121;WOS:000312364700008;;;J;Marchal, R.;Boyko, O.;Bonello, B.;Zhao, J.;Belliard, L.;Oudich, M.;Pennec, Y.;Djafari-Rouhani, B.;Dynamics of confined cavity modes in a phononic crystal slab;investigated by in situ time-resolved experiments;PHYSICAL REVIEW B;86;22;224302;10.1103/PhysRevB.86.224302;DEC 17 2012;2012;The confinement of elastic waves within a single defect in a phononic;crystal slab is investigated both experimentally and theoretically. The;structure is formed by a honeycomb lattice of air holes in a silicon;plate with one hole missing in its center. The frequencies and;polarizations of the localized modes in the first band gap are computed;with a finite element method. A noncontact laser ultrasonic technique is;used both to excite flexural Lamb waves and to monitor in situ the;displacement field within the cavity. We report on the time evolution of;confinement, which is distinct according to the symmetry of the;eigenmode. DOI: 10.1103/PhysRevB.86.224302;3;0;0;0;3;1098-0121;WOS:000312364700002;;;J;Martinez, Enrique;Senninger, Oriane;Fu, Chu-Chun;Soisson, Frederic;Decomposition kinetics of Fe-Cr solid solutions during thermal aging;PHYSICAL REVIEW B;86;22;224109;10.1103/PhysRevB.86.224109;DEC 17 2012;2012;The decomposition of Fe-Cr solid solutions during thermal aging is;modeled by atomistic kinetic Monte Carlo simulations, using a rigid;lattice approximation with pair interactions that depend on the local;composition and temperature. The pair interactions are fitted on ab;initio calculations of mixing energies and vacancy migration barriers at;0 K. The entropic contributions to the mixing of Fe-Cr alloys and to the;vacancy formation and migration free energies are taken into account.;The model reproduces the change in sign of the mixing energy with the;alloy composition and gives realistic thermodynamic and kinetic;properties, including an asymmetrical miscibility gap at low temperature;and diffusion coefficients in good agreement with available experimental;data. Simulations of short-range ordering and alpha-alpha' decomposition;are performed at 773 and 813 K for Cr concentrations between 10% and;50%. They are compared with experimental kinetics based on;three-dimensional atom probe and neutron scattering measurements. The;possible effect of magnetic properties on diffusion in the alpha and;alpha' phases, and therefore on the decomposition kinetics, is;emphasized. DOI: 10.1103/PhysRevB.86.224109;soisson, frederic/B-2917-2009; Lujan Center, LANL/G-4896-2012;soisson, frederic/0000-0001-6435-6119;;6;0;0;0;6;1098-0121;WOS:000312364700001;;;J;Moon, Eun-Gook;Xu, Cenke;Exotic continuous quantum phase transition between Z(2) topological spin;liquid and Neel order;PHYSICAL REVIEW B;86;21;214414;10.1103/PhysRevB.86.214414;DEC 17 2012;2012;Recent numerical simulations with different techniques have all;suggested the existence of a continuous quantum phase transition between;the Z(2) topological spin-liquid phase and a conventional Neel order.;Motivated by this numerical progress, we propose a candidate theory for;such Z(2)-Neel transition. We first argue on general grounds that, for a;SU(2)-invariant system, this transition can not be interpreted as the;condensation of spinons in the Z(2) spin-liquid phase. Then, we propose;that such Z(2)-Neel transition is driven by proliferating the bound;state of the bosonic spinon and vison excitation of the Z(2) spin;liquid, i.e., the so-called (e, m)-type excitation. Universal critical;exponents associated with this exotic transition are computed using 1/N;expansion. This theory predicts that at the Z(2)-Neel transition, there;is an emergent quasi-long-range power-law correlation of columnar;valence bond solid order parameter.;6;0;0;0;6;1098-0121;WOS:000312364200003;;;J;Moskvin, A. S.;Gippius, A. A.;Tkachev, A. V.;Mahajan, A. V.;Chakrabarty, T.;Presniakov, I. A.;Sobolev, A. V.;Demazeau, G.;Direct evidence of non-Zhang-Rice Cu3+ centers in La2Li0.5Cu0.5O4;PHYSICAL REVIEW B;86;24;241107;10.1103/PhysRevB.86.241107;DEC 17 2012;2012;A well-isolated Zhang-Rice (ZR) singlet as a ground state of the Cu3+;center in hole-doped cuprates is a leading paradigm in modern theories;of high-temperature superconductivity. However, a dramatic temperature;evolution of the Li-6,Li-7 NMR signal in La2Li0.5Cu0.5O4, a system with;a regular lattice of well-isolated Cu3+ centers, reveals significant;magnetic fluctuations and suggests a quasidegeneracy to be a generic;property of their ground state at variance with the simple ZR model. We;argue for a competition of the ZR state with nearby states formed by a;"doped" hole occupying purely oxygen nonbonding a(2g)(pi) and e(u)(pi);orbitals rather than a conventional b(1g)(d(x2-y2))Cu 3d-O 2p hybrid.;The temperature variation of the Li-6,Li-7 NMR line shape and;spin-lattice relaxation rate point to a gradual slowing down of some;magnetic order parameter's fluctuations without distinct signatures of a;phase transition down to T = 2 K. This behavior agrees with a stripelike;ferrodistortive fluctuating Ammm order in a two-dimensional structure of;the (CuLi)O-2 planes accompanied by unconventional oxygen orbital;antiferromagnetic fluctuations. DOI: 10.1103/PhysRevB.86.241107;Gippius, Andrey/D-1139-2010; Sobolev, Alexey/C-3832-2009;Sobolev, Alexey/0000-0002-8085-5425;0;0;0;0;0;1098-0121;WOS:000312365800002;;;J;Nguyen, P. D.;Kepaptsoglou, D. M.;Erni, R.;Ramasse, Q. M.;Olsen, A.;Quantum confinement of volume plasmons and interband transitions in;germanium nanocrystals;PHYSICAL REVIEW B;86;24;245316;10.1103/PhysRevB.86.245316;DEC 17 2012;2012;The plasmonic properties of individual quantum-sized Ge nanocrystals;(NCs) were observed and systematically analyzed by aberration-corrected;scanning transmission electron microscopy (STEM) and electron energy;loss spectroscopy (EELS). For this purpose, Ge NCs embedded in an SiO2;matrix with controllable size, density, and structure were fabricated;using magnetron sputtering. The size dependence of the Ge plasmon;energies in the size range of 5-9 nm is shown to be well depicted by the;so-called medium quantum confinement (QC) model, with an effective mass;of 0.57m(0) (contrary to expectations of a stronger quantum effect). In;the very low-loss region of the EEL spectra, an apparent blue shift of;the E-2 interband transition peak up to 2 eV and a strong reduction in;the oscillator strength were measured for the NCs in the size range of;4-6 nm. It indicates for this smaller size range a transition to a QC;regime where the band structure and the density of states are modified;dramatically. These trends are explained by a combination of low-loss;and core-loss EELS results, which show that the Ge NCs are surrounded;uniformly by nearly stoichiometric SiO2. This local chemistry is shown;to provide an infinite potential barrier and to confine electrons and;holes in the spherically shaped Ge NCs. In addition to pure QC effects;in the Ge NCs, the SiO2 matrix thus plays an important role in the;strength of the observed QC and interband transitions. DOI:;10.1103/PhysRevB.86.245316;2;0;0;0;2;1098-0121;WOS:000312365800010;;;J;Roedl, Claudia;Bechstedt, Friedhelm;Optical and energy-loss spectra of the antiferromagnetic transition;metal oxides MnO, FeO, CoO, and NiO including quasiparticle and;excitonic effects;PHYSICAL REVIEW B;86;23;235122;10.1103/PhysRevB.86.235122;DEC 17 2012;2012;We calculate the frequency-dependent dielectric function for the series;of antiferromagnetic transition metal oxides (TMOs) from MnO to NiO;using many-body perturbation theory. Quasiparticle, excitonic, and;local-field effects are taken into account by solving the Bethe-Salpeter;equation in the framework of collinear spin polarization. The optical;spectra are based on electronic structures which have been obtained;using density-functional theory with a hybrid functional containing;screened exchange (HSE03) and a subsequent quasiparticle calculation in;the GW approximation to describe exchange and correlation effects;adequately. These sophisticated quasiparticle band structures are mapped;to electronic structures resulting from the computationally less;expensive GGA + U + Delta scheme that includes an on-site interaction U;and a scissors shift Delta and allows us to calculate the large number;of electronic states that is necessary to construct the Bethe-Salpeter;Hamiltonian. For an accurate description of the optical spectra, an;appropriate treatment of the strong electron-hole attraction is;mandatory to obtain agreement with the experimentally observed;absorption-peak positions. The itinerant s and p states as well as the;localized transition metal 3d states have to be considered on an equal;footing. We find that a purely atomic picture is not suitable to;understand the optical absorption spectra of the TMOs. Reflectivity;spectra, absorption coefficients, and loss functions at vanishing;momentum transfer are computed in a wide spectral range and discussed in;light of the available experimental data. DOI:;10.1103/PhysRevB.86.235122;8;1;0;0;8;1098-0121;WOS:000312365200002;;;J;Schlickeiser, F.;Atxitia, U.;Wienholdt, S.;Hinzke, D.;Chubykalo-Fesenko, O.;Nowak, U.;Temperature dependence of the frequencies and effective damping;parameters of ferrimagnetic resonance;PHYSICAL REVIEW B;86;21;214416;10.1103/PhysRevB.86.214416;DEC 17 2012;2012;Recent experiments on all-optical switching in GdFeCo and CoGd have;raised the question about the importance of the angular momentum or the;magnetization compensation point for ultrafast magnetization dynamics.;We investigate the dynamics of ferrimagnets by means of computer;simulations as well as analytically. The results from atomistic modeling;are explained by a theory based on the two-sublattice;Landau-Lifshitz-Bloch equation. Similarly to the experimental results;and unlike predictions based on the macroscopic Landau-Lifshitz;equation, we find an increase in the effective damping at temperatures;approaching the Curie temperature. Further results for the temperature;dependence of the frequencies and effective damping parameters of the;normal modes represent an improvement of former approximated solutions,;building a better basis for comparison to recent experiments.;Atxitia, Unai/A-8870-2010;4;0;0;0;4;1098-0121;WOS:000312364200005;;;J;Smith, R. F.;Minich, R. W.;Rudd, R. E.;Eggert, J. H.;Bolme, C. A.;Brygoo, S. L.;Jones, A. M.;Collins, G. W.;Orientation and rate dependence in high strain-rate compression of;single-crystal silicon;PHYSICAL REVIEW B;86;24;245204;10.1103/PhysRevB.86.245204;DEC 17 2012;2012;High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1));compression of single crystal Si reveals strong orientation- and;rate-dependent precursor stresses. At these high compression rates, the;peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111];exceeds twice the Hugoniot elastic limit. Near the loading surface, the;rate at which Si evolves from uniaxial compression to a;three-dimensional relaxed state is exponentially dependent on;sigma(E_Peak) and independent of initial crystal orientation. At later;times, the high elastic wave speed results in a temporal decoupling of;the elastic precursor from the main inelastic wave. A rapid;high-(epsilon)over dot increase in the measured elastic stress at the;onset of inelastic deformation is consistent with a transition from;dislocation flow mediated by thermal activation to a phonon drag regime.;DOI: 10.1103/PhysRevB.86.245204;3;0;0;0;3;1098-0121;WOS:000312365800006;;;J;Svensson, S. P.;Sarney, W. L.;Hier, H.;Lin, Y.;Wang, D.;Donetsky, D.;Shterengas, L.;Kipshidze, G.;Belenky, G.;Band gap of InAs1-xSbx with native lattice constant;PHYSICAL REVIEW B;86;24;245205;10.1103/PhysRevB.86.245205;DEC 17 2012;2012;The band gap energy of the alloy InAsSb has been studied as a function;of composition with special emphasis on minimization of strain-induced;artifacts. The films were grown by molecular beam epitaxy on GaSb;substrates with compositionally graded buffer layers that were designed;to produce strain-free films. The compositions were precisely determined;by high-resolution x-ray diffraction. Evidence for weak, long-range,;group-V ordering was detected in materials exhibiting residual strain;and relaxation. In contrast, unstrained films having the nondistorted;cubic form showed no evidence of group-V ordering. The photoluminescence;(PL) peak positions therefore corresponds to the inherent band gap of;unstrained, unrelaxed, InAsSb. PL peaks were recorded for compositions;up to 46% Sb, reaching a peak wavelength of 10.3 mu m, observed under;low excitation at T = 13 K. The alloy band gap energies determined from;PL maxima are described with a bowing parameter of 0.87 eV, which is;significantly larger than measured for InAsSb in earlier work. The;sufficiently large bowing parameter and the ability to grow the alloys;without ordering allows direct band gap InAsSb to be a candidate;material for low-temperature long-wavelength infrared detector;applications. DOI: 10.1103/PhysRevB.86.245205;8;0;0;0;8;1098-0121;WOS:000312365800007;;;J;Thirupathaiah, S.;Evtushinsky, D. V.;Maletz, J.;Zabolotnyy, V. B.;Kordyuk, A. A.;Kim, T. K.;Wurmehl, S.;Roslova, M.;Morozov, I.;Buechner, B.;Borisenko, S. V.;Weak-coupling superconductivity in electron-doped NaFe0.95Co0.05As;revealed by ARPES;PHYSICAL REVIEW B;86;21;214508;10.1103/PhysRevB.86.214508;DEC 17 2012;2012;We report a systematic study on the electronic structure and;superconducting (SC) gaps in electron-doped NaFe0.95Co0.05As;superconductor using angle-resolved photoemission spectroscopy. Holelike;Fermi sheets are at the zone center and electronlike Fermi sheets are at;the zone corner, and are mainly contributed by xz and yz orbital;characters. Our results reveal a Delta/KBTc in the range of 1.8-2.1,;suggesting a weak-coupling superconductivity in these compounds. Gap;closing above the transition temperature (T-c) shows the absence of;pseudogaps. Gap evolution with temperature follows the BCS gap equation;near the Gamma, Z, and M high symmetry points. Furthermore, an almost;isotropic superconductivity along the k(z) direction in the momentum;space is observed by varying the excitation energies.;Wurmehl, Sabine/A-5872-2009; Morozov, Igor/C-4329-2011; Borisenko, Sergey/G-6743-2012; Roslova, Maria/F-7352-2013;Borisenko, Sergey/0000-0002-5046-4829;;6;0;0;0;6;1098-0121;WOS:000312364200007;;;J;Tsuda, Kenji;Sano, Rikiya;Tanaka, Michiyoshi;Nanoscale local structures of rhombohedral symmetry in the orthorhombic;and tetragonal phases of BaTiO3 studied by convergent-beam electron;diffraction;PHYSICAL REVIEW B;86;21;214106;10.1103/PhysRevB.86.214106;DEC 17 2012;2012;The symmetries of the rhombohedral, orthorhombic, and tetragonal phases;of barium titanate (BaTiO3) are investigated using convergent-beam;electron diffraction. Nanometer-sized local structures with rhombohedral;symmetry are observed in both the orthorhombic and tetragonal phases.;This indicates that an order-disorder character exists in phase;transformations of BaTiO3. The nanostructures in these phases are;discussed in terms of an order-disorder model with off-centered Ti in;the < 111 > directions.;6;0;0;0;6;1098-0121;WOS:000312364200001;;;J;Ulstrup, Soren;Frederiksen, Thomas;Brandbyge, Mads;Nonequilibrium electron-vibration coupling and conductance fluctuations;in a C-60 junction;PHYSICAL REVIEW B;86;24;245417;10.1103/PhysRevB.86.245417;DEC 17 2012;2012;We investigate chemical bond formation and conductance in a molecular;C-60 junction under finite bias voltage using first-principles;calculations based on density functional theory and nonequilibrium;Green's functions (DFT-NEGF). At the point of contact formation we;identify a remarkably strong coupling between the C-60 motion and the;molecular electronic structure. This is only seen for positive sample;bias, although the conductance itself is not strongly polarity;dependent. The nonequilibrium effect is traced back to a sudden shift in;the position of the voltage drop with a small C-60 displacement.;Combined with a vibrational heating mechanism we construct a model from;our results that explain the polarity-dependent two-level conductance;fluctuations observed in recent scanning tunneling microscopy (STM);experiments [N. Neel et al., Nano Lett. 11, 3593 (2011)]. These findings;highlight the significance of nonequilibrium effects in chemical bond;formation/breaking and in electron-vibration coupling in molecular;electronics. DOI: 10.1103/PhysRevB.86.245417;Frederiksen, Thomas/D-3545-2011; Brandbyge, Mads/C-6095-2008; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Frederiksen, Thomas/0000-0001-7523-7641;;4;0;0;0;4;1098-0121;WOS:000312365800012;;;J;Urdaniz, M. C.;Barral, M. A.;Llois, A. M.;Magnetic exchange coupling in 3d-transition-metal atomic chains adsorbed;on Cu2N/Cu(001);PHYSICAL REVIEW B;86;24;245416;10.1103/PhysRevB.86.245416;DEC 17 2012;2012;Covalent substrates can give rise to a variety of magnetic interaction;mechanisms among adsorbed transition-metal atoms building atomic;nanostructures. We show this by calculating the ground state magnetic;configuration of monoatomic 3d chains deposited on a monolayer of Cu2N;grown on Cu(001) as a function of d filling and of adsorption sites of;these nanostructures. DOI: 10.1103/PhysRevB.86.245416;1;0;0;0;1;1098-0121;WOS:000312365800011;;;J;Vaz, Eduardo;Kyriakidis, Jordan;Resonant regimes in the Fock-space coherence of multilevel quantum dots;PHYSICAL REVIEW B;86;23;235310;10.1103/PhysRevB.86.235310;DEC 17 2012;2012;The coherence between quantum states with different particle numbers-the;Fock-space coherence-qualitatively differs from the more common;Hilbert-space coherence between states with equal particle numbers. For;a quantum dot with multiple channels available for transport, we find;the conditions for decoupling the dynamics of the Fock-space coherence;from both the Hilbert-space coherence as well as the population;dynamics. We further find specific energy and coupling regimes where a;long-lived resonance in the Fock-space coherence of the system is;realized, even where no resonances are found either in the populations;or Hilbert-space coherence. Numerical calculations show this resonance;remains robust in the presence of both boson-mediated relaxation and;transport through the quantum dot. DOI: 10.1103/PhysRevB.86.235310;1;0;0;0;1;1098-0121;WOS:000312365200009;;;J;Ward, D. K.;Zhou, X. W.;Wong, B. M.;Doty, F. P.;Zimmerman, J. A.;Analytical bond-order potential for the Cd-Zn-Te ternary system;PHYSICAL REVIEW B;86;24;245203;10.1103/PhysRevB.86.245203;DEC 17 2012;2012;Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in;radiation detection and photovoltaic applications. Currently,;crystalline defects such as dislocations limit the performance of these;materials. Atomistic simulations are a powerful method for exploring;crystalline defects at a resolution unattainable by experimental;techniques. To enable accurate atomistic simulations of defects in the;Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order;potential. This Cd-Zn-Te potential has numerous unique advantages over;other potential formulations: (1) It is analytically derived from;quantum mechanical theories and is therefore more likely to be;transferable to environments that are not explicitly tested. (2) A;variety of elemental and compound configurations (with coordination;varying from 1 to 12) including small clusters, bulk lattices, defects,;and surfaces are explicitly considered during parameterization. As a;result, the potential captures structural and property trends close to;those seen in experiments and quantum mechanical calculations and;provides a good description of melting temperature, defect;characteristics, and surface reconstructions. (3) Most importantly, this;potential is validated to correctly predict the crystalline growth of;the ground-state structures for Cd, Zn, Te elements as well as CdTe,;ZnTe, and Cd1-xZnxTe compounds during highly challenging molecular;dynamics vapor deposition simulations. DOI: 10.1103/PhysRevB.86.245203;Wong, Bryan/B-1663-2009;Wong, Bryan/0000-0002-3477-8043;7;0;0;0;7;1098-0121;WOS:000312365800005;;;J;Williams, M. E.;Sims, H.;Mazumdar, D.;Butler, W. H.;Effects of 3d and 4d transition metal substitutional impurities on the;electronic properties of CrO2;PHYSICAL REVIEW B;86;23;235124;10.1103/PhysRevB.86.235124;DEC 17 2012;2012;We present first-principles-based density functional theory calculations;of the electronic and magnetic structure of CrO2 with 3d and 4d;substitutional impurities. We find that the half-metallicity of CrO2;remains intact for the ground state of all of the calculated;substitutions. We also observe two periodic trends as a function of the;number of valence electrons: if the substituted atom has six or fewer;valence electrons, the number of down spin electrons associated with the;impurity ion is zero, resulting in ferromagnetic alignment of the;impurity magnetic moment with the magnetization of the CrO2 host. For;substituent atoms with eight to ten valence electrons (with the;exception of Ni), the number of down-spin electrons contributed by the;impurity ion remains fixed at three as the number contributed to the;majority increases from one to three resulting in antiferromagnetic;alignment between impurity moment and host magnetization. In impurities;with seven valence electrons, the zero down-spin and threse down-spin;configurations are very close in energy. At 11 valence electrons, the;energy is minimized when the substituent ion contributes five down-spin;electrons. The moments on the 4d impurities, particularly Nb and Mo,;tend to be delocalized compared with those of the 3ds. DOI:;10.1103/PhysRevB.86.235124;0;0;0;0;0;1098-0121;WOS:000312365200004;;;J;Yan, Xin-Zhong;Ting, C. S.;Possible broken inversion and time-reversal symmetry state of electrons;in bilayer graphene;PHYSICAL REVIEW B;86;23;235126;10.1103/PhysRevB.86.235126;DEC 17 2012;2012;With the two-band continuum model, we study the broken inversion and;time-reversal symmetry state of electrons with finite-range repulsive;interactions in bilayer graphene. In the state, there are overlapped;loop currents in each layer. With the analytical solution to the;mean-field Hamiltonian, we obtain the electronic spectra. The ground;state is gapped. In the presence of the magnetic field B, the energy gap;grows with increasing B, in excellent agreement with the experimental;observation. Such an energy-gap behavior originates from the;disappearance of a Landau level of n = 0 and 1 states. The present;result resolves explicitly the puzzle of the gap dependence of B. DOI:;10.1103/PhysRevB.86.235126;6;0;0;0;6;1098-0121;WOS:000312365200006;;;J;Yin, Z. P.;Haule, K.;Kotliar, G.;Fractional power-law behavior and its origin in iron-chalcogenide and;ruthenate superconductors: Insights from first-principles calculations;(vol 86, 195141, 2012);PHYSICAL REVIEW B;86;23;239904;10.1103/PhysRevB.86.239904;DEC 17 2012;2012;2;0;0;0;2;1098-0121;WOS:000312365200014;;;J;Zhigadlo, N. D.;Weyeneth, S.;Katrych, S.;Moll, P. J. W.;Rogacki, K.;Bosma, S.;Puzniak, R.;Karpinski, J.;Batlogg, B.;High-pressure flux growth, structural, and superconducting properties of;LnFeAsO (Ln = Pr, Nd, Sm) single crystals;PHYSICAL REVIEW B;86;21;214509;10.1103/PhysRevB.86.214509;DEC 17 2012;2012;Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with;lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high;pressure. The crystals are of good structural quality and become;superconducting when O is partially substituted by F (PrFeAsO1-xFx and;NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From;magnetization measurements, we estimate the temperature dependence and;anisotropy of the upper critical field and the critical current density;of underdoped PrFeAsO0.7F0.3 crystal with T-c approximate to 25 K.;Single crystals of SmFe1-xCoxAsO with maximal T-c up to 16.3 K for x;approximate to 0.08 were grown. From transport and magnetic;measurements, we estimate the critical fields and their anisotropy and;find these superconducting properties to be quite comparable to the ones;in SmFeAsO1-xFx with a much higher T-c approximate to 50 K. The;magnetically measured critical current densities are as high as 10(9);A/m(2) at 2 K up to 7 T, with indication of the usual fishtail effect.;The upper critical field estimated from resistivity measurements is;anisotropic with slopes of similar to - 8.7 T/K (H parallel to ab plane);and similar to - 1.7 T/K (H parallel to c axis). This anisotropy;(similar to 5) is similar to that in other Ln1111 crystals with various;higher T-c's.;Puzniak, Roman/N-1643-2013;Puzniak, Roman/0000-0001-5636-5541;7;0;0;0;7;1098-0121;WOS:000312364200008;;;J;Zhu, Guobao;Yang, Shengyuan A.;Fang, Cheng;Liu, W. M.;Yao, Yugui;Theory of orbital magnetization in disordered systems;PHYSICAL REVIEW B;86;21;214415;10.1103/PhysRevB.86.214415;DEC 17 2012;2012;We present a general formula of the orbital magnetization of disordered;systems based on the Keldysh Green's function theory in the;gauge-covariant Wigner space. In our approach, the gauge invariance of;physical quantities is ensured from the very beginning, and the vertex;corrections are easily included. Our formula applies not only for;insulators but also for metallic systems where the quasiparticle;behavior is usually strongly modified by the disorder scattering. In the;absence of disorders, our formula recovers the previous results obtained;from the semiclassical theory and the perturbation theory. As an;application, we calculate the orbital magnetization of a weakly;disordered two-dimensional electron gas with Rashba spin-orbit coupling.;We find that for the short-range disorder scattering, its major effect;is to the shifting of the distribution of orbital magnetization;corresponding to the quasiparticle energy renormalization.;Yao, Yugui/A-8411-2012; Yang, Shengyuan/L-2848-2014;6;0;1;0;7;1098-0121;WOS:000312364200004;;;J;Zhukov, E. A.;Yugov, O. A.;Yugova, I. A.;Yakovlev, D. R.;Karczewski, G.;Wojtowicz, T.;Kossut, J.;Bayer, M.;Resonant spin amplification of resident electrons in CdTe/(Cd,Mg)Te;quantum wells subject to tilted magnetic fields;PHYSICAL REVIEW B;86;24;245314;10.1103/PhysRevB.86.245314;DEC 17 2012;2012;Electron spin coherence in CdTe/(Cd,Mg)Te quantum wells is studied;experimentally and theoretically in tilted external magnetic fields;generated by a superconducting vector magnet. The long-lived spin;coherence is measured by pump-probe Kerr rotation in the resonant spin;amplification (RSA) regime. The shape of RSA signals is very sensitive;to weak magnetic field components deviating from the Voigt or Faraday;geometries. DOI: 10.1103/PhysRevB.86.245314;Yugova, Irina/F-6823-2011;Yugova, Irina/0000-0003-0020-3679;3;0;0;0;3;1098-0121;WOS:000312365800008;;;J;Adelstein, Nicole;Mun, B. Simon;Ray, Hannah L.;Ross, Philip N., Jr.;Neaton, Jeffrey B.;De Jonghe, Lutgard C.;Structure and electronic properties of cerium orthophosphate: Theory and;experiment (vol 83, 205104, 2011);PHYSICAL REVIEW B;86;23;239903;10.1103/PhysRevB.86.239903;DEC 14 2012;2012;Mun, Bongjin /G-1701-2013;0;0;0;0;0;1098-0121;WOS:000312365100009;;;J;Bagchi, Debarshee;Mohanty, P. K.;Thermally driven classical Heisenberg model in one dimension;PHYSICAL REVIEW B;86;21;214302;10.1103/PhysRevB.86.214302;DEC 14 2012;2012;We study thermal transport in a classical one-dimensional Heisenberg;model employing a discrete-time odd-even precessional update scheme.;This dynamics equilibrates a spin chain for any arbitrary temperature;and finite value of the integration time step Delta t. We rigorously;show that in presence of driving, the system attains local thermal;equilibrium, which is a strict requirement of Fourier law. In the;thermodynamic limit, heat current for such a system obeys Fourier law;for all temperatures, as has been recently shown [A. V. Savin, G. P.;Tsironis, and X. Zotos, Phys. Rev. B 72, 140402(R) (2005)]. Finite;systems, however, show an apparent ballistic transport which crosses;over to a diffusive one as the system size is increased. We provide;exact results for current and energy profiles in zero- and;infinite-temperature limits. DOI: 10.1103/PhysRevB.86.214302;3;0;0;0;3;1098-0121;WOS:000312364100001;;;J;Barasinski, A.;Kamieniarz, G.;Drzewinski, A.;Magnetization-based assessment of correlation energy in canted;single-chain magnets;PHYSICAL REVIEW B;86;21;214412;10.1103/PhysRevB.86.214412;DEC 14 2012;2012;We demonstrate numerically that for the strongly anisotropic;homometallic S = 2 canted single-chain magnet described by the quantum;antiferromagnetic Heisenberg model, the correlation energy and exchange;coupling constant can be directly estimated from the;in-field-magnetization profile found along the properly selected;crystallographic direction. In the parameter space defined by the;spherical angles (phi, theta) determining the axes orientation, four;regions are identified with different sequences of the characteristic;field-dependent magnetization profiles representing the;antiferromagnetic, metamagnetic, and weak ferromagnetic type behavior.;These sequences provide a criterion for the applicability of the;anisotropic quantum Heisenberg model to a given experimental system. Our;analysis shows that the correlation energy decreases linearly with field;and vanishes for a given value H-cr, which defines a special coordinates;in the metamagnetic profile relevant for the zero-field correlation;energy and magnetic coupling. For the single-chain magnet formed by the;strongly anisotropic manganese(III) acetate meso-tetraphenylporphyrin;complexes coupled to the phenylphosphinate ligands, the experimental;metamagnetic-type magnetization curve in the c direction yields an;accurate estimate of the values of correlation energy Delta(xi)/k(B) =;7.93 K and exchange coupling J/k(B) = 1.20 K. DOI:;10.1103/PhysRevB.86.214412;1;0;0;0;1;1098-0121;WOS:000312364100004;;;J;Brinzari, T. V.;Chen, P.;Tung, L. -C.;Kim, Y.;Smirnov, D.;Singleton, J.;Miller, Joel. S.;Musfeldt, J. L.;Magnetoelastic coupling in [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] molecule-based;magnet;PHYSICAL REVIEW B;86;21;214411;10.1103/PhysRevB.86.214411;DEC 14 2012;2012;Infrared and Raman vibrational spectroscopies were employed to explore;the lattice dynamics of [Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] through the;field- and temperature-driven magnetic transitions. The high field work;reveals systematic changes in the C equivalent to N stretching mode and;Cr-containing phonons as the system is driven away from the;antiferromagnetic state. The magnetic intersublattice coalescence;transition at B-c similar or equal to 0.08 T, on the contrary, is purely;magnetic and takes place with no lattice involvement. The variable;temperature spectroscopy affirms overall [Cr(CN)(6)](3-) flexibility;along with stronger intermolecular interactions at low temperature.;Based on a displacement pattern analysis, we discuss the local lattice;distortions in terms of an adaptable chromium environment. These;findings provide deeper understanding of spin-lattice coupling in;[Ru-2(O2CMe)(4)](3)[Cr(CN)(6)] and may be useful in the development of;technologically important molecule-based magnets. DOI:;10.1103/PhysRevB.86.214411;4;2;0;0;4;1098-0121;WOS:000312364100003;;;J;Chan, Tzu-Liang;Capacitance of metallic and semiconducting nanowires examined by;first-principles calculations;PHYSICAL REVIEW B;86;24;245414;10.1103/PhysRevB.86.245414;DEC 14 2012;2012;The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few;nanometers in diameter are examined by first-principles calculations.;During charging, the metallic nanowire expels the charge to its surface,;and its capacitance stays relatively constant. For the semiconducting;nanowire, depletion of conduction electrons can lead to an increase in;the work function, which results in a drop in the capacitance when;charged beyond a threshold. This study is made possible by developing a;formalism for total energy calculations of charged periodic systems with;a specific electrostatic boundary condition. DOI:;10.1103/PhysRevB.86.245414;1;0;0;0;1;1098-0121;WOS:000312365400006;;;J;Dias, R. G.;del Rio, Lidia;Goltsev, A. V.;Interplay between potential and spin-flip scattering in systems with;depleted density of states;PHYSICAL REVIEW B;86;23;235120;10.1103/PhysRevB.86.235120;DEC 14 2012;2012;We study the behavior of a magnetic impurity in systems with a depleted;density of states by use of the spin-1/2 single-impurity Anderson model;and the equation of motion approach. We calculate the impurity spectral;function and study the role of potential and spin-flip scattering. We;show that in these systems, if the hybridization is larger than a;critical value, a narrow virtual bound resonance emerges. The resonance;peak appears much below the Fermi energy and is dominated by the;contribution of potential scattering of conduction electrons by the;magnetic impurity while spin-flip scattering only gives a nonsingular;temperature-dependent contribution to this peak. These results are in;contrast to behavior of impurities in normal metals where it is;spin-flip scattering that is responsible for the Kondo peak near the;Fermi level while potential scattering gives a nonsignificant;renormalization of the exchange coupling. We also show that the virtual;bound resonance leads to a strong renormalization of the effective;exchange coupling between conduction and impurity spins. The narrow;virtual bound resonance can be observed in graphene with magnetic;impurities where its spectral weight and position is strongly influenced;by the van Hove singularity. DOI: 10.1103/PhysRevB.86.235120;Universidade Aveiro, Departamento Fisica/E-4128-2013; Dias, Ricardo/J-6007-2013;Dias, Ricardo/0000-0002-5128-5531;0;0;0;0;0;1098-0121;WOS:000312365100001;;;J;Ganeshan, Sriram;Abanov, Alexander G.;Averin, Dmitri V.;Fractional quantum Hall interferometers in a strong tunneling regime:;The role of compactness in edge fields;PHYSICAL REVIEW B;86;23;235309;10.1103/PhysRevB.86.235309;DEC 14 2012;2012;We consider multiple-point tunneling in the interferometers formed;between edges of electron liquids with, in general, different filling;factors in the regime of the fractional quantum Hall effect (FQHE). We;derive an effective matrix Caldeira-Leggett model for the multiple;tunneling contacts connecting the chiral single-mode FQHE edges. It is;shown that the compactness of the Wen-Frohlich chiral boson fields;describing the FQHE edge modes plays a crucial role in eliminating the;spurious nonlocality of the electron transport properties of the FQHE;interferometers arising in the regime of strong tunneling. DOI:;10.1103/PhysRevB.86.235309;0;0;0;0;0;1098-0121;WOS:000312365100004;;;J;Giannazzo, F.;Deretzis, I.;La Magna, A.;Roccaforte, F.;Yakimova, R.;Electronic transport at monolayer-bilayer junctions in epitaxial;graphene on SiC;PHYSICAL REVIEW B;86;23;235422;10.1103/PhysRevB.86.235422;DEC 14 2012;2012;Two-dimensional maps of the electronic conductance in epitaxial graphene;grown on SiC were obtained by calibrated conductive atomic force;microscopy. The correlation between morphological and electrical maps;revealed the local conductance degradation in epitaxial graphene over;the SiC substrate steps or at the junction between monolayer (1L) and;bilayer (2L) graphene regions. The effect of steps strongly depends on;the charge transfer phenomena between the step sidewall and graphene,;whereas the resistance increase at the 1L/2L junction is a purely;quantum-mechanical effect independent on the interaction with the;substrate. First-principles transport calculations indicate that the;weak wave-function coupling between the 1L pi/pi* bands with the;respective first bands of the 2L region gives rise to a strong;suppression of the conductance for energies within +/- 0.48 eV from the;Dirac point. Conductance degradation at 1L/2L junctions is therefore a;general issue for large area graphene with a certain fraction of;inhomogeneities in the layer number, including graphene grown by;chemical vapor deposition on metals. DOI: 10.1103/PhysRevB.86.235422;Materials, Semiconductor/I-6323-2013;11;0;0;0;11;1098-0121;WOS:000312365100005;;;J;Hintzsche, L. E.;Fang, C. M.;Watts, T.;Marsman, M.;Jordan, G.;Lamers, M. W. P. E.;Weeber, A. W.;Kresse, G.;Density functional theory study of the structural and electronic;properties of amorphous silicon nitrides: Si3N4-x:H;PHYSICAL REVIEW B;86;23;235204;10.1103/PhysRevB.86.235204;DEC 14 2012;2012;We present ab initio density functional theory studies for;stoichiometric as well as nonstoichiometric amorphous silicon nitride,;varying the stoichiometry between Si3N4.5 and Si3N3. Stoichiometric;amorphous Si3N4 possesses the same local structure as crystalline Si3N4,;with Si being fourfold coordinated and N being threefold coordinated.;Only few Si-Si and N-N bonds and other defects are found in;stoichiometric silicon nitride, and the electronic properties are very;similar to the crystalline bulk. In over-stoichiometric Si3N4+x, the;additional N results in N-N bonds, whereas in under-stoichiometric;Si3N4-x the number of homopolar Si-Si bonds increases with decreasing N;content. Analysis of the structure factor and the local coordination of;the Si atoms indicates a slight tendency towards Si clustering, although;at the investigated stoichiometries, phase separation is not observed.;In the electronic properties, the conduction-band minimum is dominated;by Si states, whereas the valence-band maximum is made up by lone pair N;states. Towards Si rich samples, the character of the valence-band;maximum becomes dominated by Si states corresponding to Si-Si bonding;linear combinations. Adding small amounts of hydrogen, as typically used;in passivating layers of photovoltaic devices, has essentially no impact;on the overall structural and electronic properties. DOI:;10.1103/PhysRevB.86.235204;Fang, Chang Ming/E-9213-2013;3;0;0;0;3;1098-0121;WOS:000312365100002;;;J;Joung, Daeha;Khondaker, Saiful I.;Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets;of varying carbon sp(2) fraction;PHYSICAL REVIEW B;86;23;235423;10.1103/PhysRevB.86.235423;DEC 14 2012;2012;We investigate the low-temperature electron transport properties of;chemically reduced graphene oxide (RGO) sheets with different carbon;sp(2) fractions of 55% to 80%. We show that in the low-bias (Ohmic);regime, the temperature (T) dependent resistance (R) of all the devices;follow Efros-Shklovskii variable range hopping (ES-VRH) R similar to;exp[(T-ES/T)(1/2)] with T-ES decreasing from 3.1 x 10(4) to 0.42 x 10(4);K and electron localization length increasing from 0.46 to 3.21 nm with;increasing sp(2) fraction. From our data, we predict that for the;temperature range used in our study, Mott-VRH may not be observed even;at 100% sp(2) fraction samples due to residual topological defects and;structural disorders. From the localization length, we calculate a;band-gap variation of our RGO from 1.43 to 0.21 eV with increasing sp(2);fraction from 55 to 80%, which agrees remarkably well with theoretical;predictions. We also show that, in the high bias non-Ohmic regime at low;temperature, the hopping is field driven and the data follow R similar;to exp[(E0/E)(1/2)] providing further evidence of ES-VRH. DOI:;10.1103/PhysRevB.86.235423;14;0;0;0;14;1098-0121;WOS:000312365100006;;;J;Kim, Se-Heon;Homyk, Andrew;Walavalkar, Sameer;Scherer, Axel;High-Q impurity photon states bounded by a photonic band pseudogap in an;optically thick photonic crystal slab;PHYSICAL REVIEW B;86;24;245114;10.1103/PhysRevB.86.245114;DEC 14 2012;2012;We show that, taking a two-dimensional photonic crystal slab system as;an example, surprisingly high quality factors (Q) over 10(5) are;achievable, even in the absence of a rigorous photonic band gap. We find;that the density of in-plane Bloch modes can be controlled by creating;additional photon feedback from a finite-size photonic-crystal boundary;that serves as a low-Q resonator. This mechanism enables significant;reduction in the coupling strength between the bound state and the;extended Bloch modes by more than a factor of 40. DOI:;10.1103/PhysRevB.86.245114;Walavalkar, Sameer/B-3196-2013; Kim, Se-Heon/C-5498-2008;Walavalkar, Sameer/0000-0002-7628-9600;;2;0;0;0;2;1098-0121;WOS:000312365400001;;;J;Kravets, A. F.;Timoshevskii, A. N.;Yanchitsky, B. Z.;Bergmann, M. A.;Buhler, J.;Andersson, S.;Korenivski, V.;Temperature-controlled interlayer exchange coupling in strong/weak;ferromagnetic multilayers: A thermomagnetic Curie switch;PHYSICAL REVIEW B;86;21;214413;10.1103/PhysRevB.86.214413;DEC 14 2012;2012;We investigate interlayer exchange coupling based on driving a;strong/weak/strong ferromagnetic trilayer through the Curie point of the;weakly ferromagnetic spacer, with exchange coupling between the strongly;ferromagnetic outer layers that can be switched on and off, or varied;continuously in magnitude by controlling the temperature of the;material. We use Ni-Cu alloys of varied composition as the spacer;material and model the effects of proximity-induced magnetism and the;interlayer exchange coupling through the spacer from first principles,;taking into account not only thermal spin disorder but also the;dependence of the atomic moment of Ni on the nearest-neighbor;concentration of the nonmagnetic Cu. We propose and demonstrate a;gradient-composition spacer, with a lower Ni concentration at the;interfaces, for greatly improved effective-exchange uniformity and;significantly improved thermomagnetic switching in the structure. The;reported multilayer materials can form the base for a variety of;magnetic devices, such as sensors, oscillators, and memory elements;based on thermomagnetic Curie switching. DOI: 10.1103/PhysRevB.86.214413;Korenivski, Vladislav/N-7355-2014;Korenivski, Vladislav/0000-0003-2339-1692;4;0;0;0;4;1098-0121;WOS:000312364100005;;;J;Little, C. E.;Anufriev, R.;Iorsh, I.;Kaliteevski, M. A.;Abram, R. A.;Brand, S.;Tamm plasmon polaritons in multilayered cylindrical structures;PHYSICAL REVIEW B;86;23;235425;10.1103/PhysRevB.86.235425;DEC 14 2012;2012;It is shown that cylindrical Bragg reflector structures with either a;metal core, a metal cladding, or both can support Tamm plasmon;polaritons (TPPs) that can propagate axially along the interface between;the metallic layer and the adjacent dielectric. A transfer matrix;formalism for cylindrical multilayered structures is used in association;with cavity phase matching considerations to design structures that;support Tamm plasmon polaritons at specified frequencies, and to explore;the field distributions and the dispersion relations of the excitations.;The cylindrical TPPs can exist in both the TE and TM polarizations for;the special cases of modes with either azimuthal isotropy or zero axial;propagation constant and also as hybrid cylindrical modes when neither;of those conditions applies. In the cases considered the TPPs have low;effective masses and low group velocities. Also, when there is both;metallic core and cladding, near degenerate modes localized at each;metallic interface can couple to produce symmetric and antisymmetric;combinations whose frequency difference is in the terahertz regime. DOI:;10.1103/PhysRevB.86.235425;Brand, Stuart/A-1658-2009;Brand, Stuart/0000-0002-1757-5017;3;0;0;0;3;1098-0121;WOS:000312365100008;;;J;Machida, Manabu;Iitaka, Toshiaki;Miyashita, Seiji;ESR intensity and the Dzyaloshinsky-Moriya interaction of the nanoscale;molecular magnet V-15;PHYSICAL REVIEW B;86;22;224412;10.1103/PhysRevB.86.224412;DEC 14 2012;2012;The intensity of electron spin resonance (ESR) of the nanoscale;molecular magnet V-15 is studied. We calculate the temperature;dependence of the intensity at temperatures from high to low. In;particular, we find that the low-temperature ESR intensity is;significantly affected by the Dzyaloshinsky-Moriya interaction. DOI:;10.1103/PhysRevB.86.224412;1;0;0;0;1;1098-0121;WOS:000312364500003;;;J;Meinert, Markus;Friedrich, Christoph;Reiss, Guenter;Bluegel, Stefan;GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi;PHYSICAL REVIEW B;86;24;245115;10.1103/PhysRevB.86.245115;DEC 14 2012;2012;Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi;Heusler compounds have been calculated within the one-shot GW;approximation in an all-electron framework without adjustable;parameters. For Co2FeSi the many-body corrections are crucial: a;pseudogap opens and good agreement of the magnetic moment with;experiment is obtained. Otherwise, however, the changes with respect to;the density-functional-theory starting point are moderate. For both;cases we find that photoemission and x-ray absorption spectra are well;described by the calculations. By comparison with the GW density of;states, we conclude that the Kohn-Sham eigenvalue spectrum provides a;reasonable approximation for the quasiparticle spectrum of the Heusler;compounds considered in this work. DOI: 10.1103/PhysRevB.86.245115;Reiss, Gunter/A-3423-2010; Meinert, Markus/E-8794-2011; Blugel, Stefan/J-8323-2013; Friedrich, Christoph/L-5029-2013;Reiss, Gunter/0000-0002-0918-5940; Blugel, Stefan/0000-0001-9987-4733;;Friedrich, Christoph/0000-0002-3315-7536;7;1;0;0;7;1098-0121;WOS:000312365400002;;;J;Misiorny, Maciej;Weymann, Ireneusz;Barnas, Jozef;Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange,;anisotropy, and temperature effects;PHYSICAL REVIEW B;86;24;245415;10.1103/PhysRevB.86.245415;DEC 14 2012;2012;We present a theoretical analysis of the effects of uniaxial magnetic;anisotropy and contact-induced exchange field on the underscreened Kondo;effect in S = 1 magnetic quantum dots coupled to ferromagnetic leads.;First, by using the second-order perturbation theory we show that the;coupling to spin-polarized electrode results in an effective exchange;field B-eff and an effective magnetic anisotropy D-eff. Second, we;confirm these findings by using the numerical renormalization group;method, which is employed to study the dependence of the quantum-dot;spectral functions, as well as quantum-dot spin, on various parameters;of the system. We show that the underscreened Kondo effect is generally;suppressed due to the presence of effective exchange field and can be;restored by tuning the anisotropy constant, when vertical bar D-eff;vertical bar = |B-eff vertical bar. The Kondo effect can also be;restored by sweeping an external magnetic field, and the restoration;occurs twice in a single sweep. From the distance between the restored;Kondo resonances one can extract the information about both the exchange;field and the effective anisotropy. Finally, we calculate the;temperature dependence of linear conductance for the parameters where;the Kondo effect is restored and show that the restored Kondo resonances;display a universal scaling of S = 1/2 Kondo effect. DOI:;10.1103/PhysRevB.86.245415;3;0;0;0;3;1098-0121;WOS:000312365400007;;;J;Monette, Gabriel;Nateghi, Nima;Masut, Remo A.;Francoeur, Sebastien;Menard, David;Plasmonic enhancement of the magneto-optical response of MnP;nanoclusters embedded in GaP epilayers;PHYSICAL REVIEW B;86;24;245312;10.1103/PhysRevB.86.245312;DEC 14 2012;2012;We report on the magneto-optical activity of MnP nanoclusters embedded;in GaP epilayers and MnP thin film as a function of temperature,;magnetic field, and wavelength in the near infrared and visible. The;measured Faraday rotation originates from the ferromagnetic;magnetization of the metallic MnP phase and exhibits a hysteretic;behavior as a function of an externally applied magnetic field closely;matching that of the magnetization. The Faraday rotation spectrum of MnP;shows a magnetoplasmonic resonance whose energy depends on the MnP;filling factor and surrounding matrix permittivity. At resonance, the;measured rotary power for the epilayer systems increases by a factor of;2 compared to that of the MnP film in terms of degrees of rotation per;MnP thickness for an applied magnetic field of 410 mT. We propose an;effective medium model, which qualitatively reproduces the Faraday;rotation and the magnetocircular dichroism spectra, quantitatively;determines the spectral shift induced by variations in the MnP volume;fraction, and demonstrates the influence of the shape and orientation;distributions of ellipsoidal MnP nanoclusters on the magneto-optical;activity and absorption spectra. DOI: 10.1103/PhysRevB.86.245312;Menard, David/A-6862-2010; Francoeur, Sebastien/E-6614-2011; Masut, Remo/I-3727-2014;Menard, David/0000-0003-2207-3422;;2;0;0;0;2;1098-0121;WOS:000312365400003;;;J;Morgan, Steven W.;Oganesyan, Vadim;Boutis, Gregory S.;Multispin correlations and pseudothermalization of the transient density;matrix in solid-state NMR: Free induction decay and magic echo;PHYSICAL REVIEW B;86;21;214410;10.1103/PhysRevB.86.214410;DEC 14 2012;2012;Quantum unitary evolution typically leads to thermalization of generic;interacting many-body systems. There are very few known general methods;for reversing this process, and we focus on the magic echo, a;radio-frequency pulse sequence known to approximately "rewind" the time;evolution of dipolar coupled homonuclear spin systems in a large;magnetic field. By combining analytic, numerical, and experimental;results, we systematically investigate factors leading to the;degradation of magic echoes, as observed in reduced revival of mean;transverse magnetization. Going beyond the conventional analysis based;on mean magnetization, we use a phase-encoding technique to measure the;growth of spin correlations in the density matrix at different points in;time following magic echoes of varied durations and compare the results;to those obtained during a free induction decay. While considerable;differences are documented at short times, the long-time behavior of the;density matrix appears to be remarkably universal among the types of;initial states considered: simple low-order multispin correlations are;observed to decay exponentially at the same rate, seeding the onset of;increasingly complex high-order correlations. This manifestly athermal;process is constrained by conservation of the second moment of the;spectrum of the density matrix and proceeds indefinitely, assuming;unitary dynamics. DOI: 10.1103/PhysRevB.86.214410;3;0;0;0;3;1098-0121;WOS:000312364100002;;;J;Sung, N. H.;Roh, C. J.;Kim, K. S.;Cho, B. K.;Possible multigap superconductivity and magnetism in single crystals of;superconducting La2Pt3Ge5 and Pr2Pt3Ge5;PHYSICAL REVIEW B;86;22;224507;10.1103/PhysRevB.86.224507;DEC 14 2012;2012;We herein describe our investigation of the superconducting and magnetic;properties of the rare-earth ternary germanide intermetallic compounds;La2Pt3Ge5 and Pr2Pt3Ge5. Single crystals of La2Pt3Ge5 and Pr2Pt3Ge5 were;synthesized using the high-temperature metal flux method. Both types of;crystal formed in a U2Co3Si5-type orthorhombic structure (space group;Ibam). La2Pt3Ge5 showed the onset of superconducting phase transition at;T-c = 8.1 K, which, to the best of our knowledge, is the highest Tc of;all the R2M3X5 (R = rare-earth elements, M = transition metal, and X =;s-p metal) superconductors, and from the specific heat data, it was;found to have multigap superconductivity. Pr2Pt3Ge5 showed both a;superconducting phase transition at T-c = 7.8 K and two;antiferromagnetic transitions at T-N1 = 3.5 K and T-N2 = 4.2 K, which;indicates the coexistence of superconductivity and magnetism. However,;the correlation between the superconductivity and the magnetism was too;weak to be observed. In its normal state, Pr2Pt3Ge5 revealed strong;magnetic anisotropy, probably due to the crystalline electric field;effect. DOI: 10.1103/PhysRevB.86.224507;1;0;0;0;1;1098-0121;WOS:000312364500004;;;J;Suzuki, Takafumi;Sato, Masahiro;Gapless edge states and their stability in two-dimensional quantum;magnets;PHYSICAL REVIEW B;86;22;224411;10.1103/PhysRevB.86.224411;DEC 14 2012;2012;We study the nature of edge states in extrinsically and spontaneously;dimerized states of two-dimensional spin-1/2 antiferromagnets, by;performing quantum Monte Carlo simulation. We show that a gapless edge;mode emerges in the wide region of the dimerized phases, and the;critical exponent of spin correlators along the edge deviates from the;value of Tomonaga-Luttinger liquid (TLL) universality in large but;finite systems at low temperatures. We also demonstrate that the gapless;nature at edges is stable against several perturbations such as external;magnetic field, easy-plane XXZ anisotropy, Dzyaloshinskii-Moriya;interaction, and further-neighbor exchange interactions. The edge states;exhibit non-TLL behavior, depending strongly on model parameters and;kinds of perturbations. Possible ways of detecting these edge states are;discussed. Properties of edge states we show in this paper could also be;used as reference points to study other edge states of more exotic;gapped magnetic phases such as spin liquids. DOI:;10.1103/PhysRevB.86.224411;0;0;0;0;0;1098-0121;WOS:000312364500002;;;J;Tian, H. Y.;Chan, K. S.;Wang, J.;Efficient spin injection in graphene using electron optics;PHYSICAL REVIEW B;86;24;245413;10.1103/PhysRevB.86.245413;DEC 14 2012;2012;We investigate theoretically spin injection efficiency from the;ferromagnetic graphene to normal graphene (FG/NG) based on electron;optics, where the magnetization in the FG is assumed from the magnetic;proximity effect. Based on a graphene lattice model, we demonstrated;that one spin-species electron flow from a point source could be nearly;suppressed through the FG-NG interface, when the total internal;reflection effect occurs with the help of an additional barrier masking;the Klein tunneling, while the opposite spin-species electron flow could;even be collimated due to the negative refraction under suitable;parameters. Not only at the focusing point is the efficient spin;injection achieved, but in the whole NG region the spin injection;efficiency can also be maintained at a high level. It is also shown that;the nonideal FG-NG interface could reduce the spin injection efficiency;since the electron optics phenomena are weakened owing to the;interfacial backscattering. Our findings may shed light on making;graphene-based spin devices in the spintronics field. DOI:;10.1103/PhysRevB.86.245413;3;0;2;0;3;1098-0121;WOS:000312365400005;;;J;Vasko, F. T.;Mitin, V. V.;Ryzhii, V.;Otsuji, T.;Interplay of intra- and interband absorption in a disordered graphene;PHYSICAL REVIEW B;86;23;235424;10.1103/PhysRevB.86.235424;DEC 14 2012;2012;The absorption of heavily doped graphene in the terahertz and;midinfrared spectral regions is considered, taking into account both the;elastic scattering due to finite-range disorder and the variations of;concentration due to long-range disorder. The interplay between intra-;and interband transitions is analyzed for the high-frequency regime of;response, near the Pauli blocking threshold. The gate voltage and;temperature dependencies of the absorption efficiency are calculated. It;is demonstrated that for typical parameters, the smearing of the;interband absorption edge is determined by a partly screened;contribution to long-range disorder while the intraband absorption is;determined by finite-range scattering. The latter yields the spectral;dependencies which deviate from those following from the Drude formula.;The obtained dependencies are in agreement with recent experimental;results. The comparison of the results of our calculations with the;experimental data provides a possibility to extract the disorder;characteristics. DOI: 10.1103/PhysRevB.86.235424;10;0;0;0;10;1098-0121;WOS:000312365100007;;;J;Violante, C.;Conte, A. Mosca;Bechstedt, F.;Pulci, O.;Geometric, electronic, and optical properties of the Si(111)2x1 surface:;Positive and negative buckling;PHYSICAL REVIEW B;86;24;245313;10.1103/PhysRevB.86.245313;DEC 14 2012;2012;The Si(111)2x1 is among the most investigated surfaces. Nonetheless,;several issues are still not understood. Its reconstruction is well;explained in terms of the Pandey model with a slight buckling (tilting);of the topmost atoms; two different isomers of the surface,;conventionally named positive and negative buckling, exist. Usually,;scanning tunneling microscopy (STM) experiments identify the positive;buckling isomer as the stable reconstruction at room temperature.;However, at low temperatures and for high n doping of the substrate,;recent scanning tunneling spectroscopy (STS) measurements found the;coexistence of positive and negative buckling on the Si(111) 2x1;surface. In this work, state-of-the-art ab initio methods, based on;density functional theory and on many-body perturbation theory, have;been used to obtain structural, electronic, and optical properties of;Si(111) 2x1 positive and negative buckling. The theoretical reflectance;anisotropy spectra (RAS), with the inclusion of the excitonic effects,;can provide a way to deepen the understanding of the coexistence of the;isomers. DOI: 10.1103/PhysRevB.86.245313;5;0;0;0;5;1098-0121;WOS:000312365400004;;;J;Yuge, Tatsuro;Sagawa, Takahiro;Sugita, Ayumu;Hayakawa, Hisao;Geometrical pumping in quantum transport: Quantum master equation;approach;PHYSICAL REVIEW B;86;23;235308;10.1103/PhysRevB.86.235308;DEC 14 2012;2012;For an open quantum system, we investigate the pumped current induced by;a slow modulation of control parameters on the basis of the quantum;master equation and full counting statistics. We find that the average;and the cumulant generating function of the pumped quantity are;characterized by the geometrical Berry-phase-like quantities in the;parameter space, which is associated with the generator of the master;equation. From our formulation, we can discuss the geometrical pumping;under the control of the chemical potentials and temperatures of;reservoirs. We demonstrate the formulation by spinless electrons in;coupled quantum dots. We show that the geometrical pumping is prohibited;for the case of noninteracting electrons if we modulate only;temperatures and chemical potentials of reservoirs, while the;geometrical pumping occurs in the presence of an interaction between;electrons. DOI: 10.1103/PhysRevB.86.235308;5;0;0;0;5;1098-0121;WOS:000312365100003;;;J;Zhang, Yanning;Wang, Hui;Wu, Ruqian;First-principles determination of the rhombohedral magnetostriction of;Fe100-xAlx and Fe100-xGax alloys;PHYSICAL REVIEW B;86;22;224410;10.1103/PhysRevB.86.224410;DEC 14 2012;2012;Through systematic density functional calculations using the full;potential linearized augmented plane-wave (FLAPW) method, the;rhombohedral magnetostriction (lambda(111)) of Fe100-xAlx and Fe100-xGax;alloys are studied for x up to 25. Theoretical calculations;satisfactorily reproduce the main features of experimental;lambda(111)(x) curves, except for dilute alloys with x < 5. Detailed;analyses on electronic and structural properties indicate the importance;of availability and symmetry of dangling bonds for the sign change of;lambda(111) around x = 16. In addition, the impurity induced local;distortion might be a possible reason for the disagreement between;theory and experiment for lambda(111) of the bulk bcc Fe. DOI:;10.1103/PhysRevB.86.224410;ZHANG, YANNING/A-3316-2013; Wu, Ruqian/C-1395-2013;0;0;0;0;0;1098-0121;WOS:000312364500001;;;J;Al Attar, Hameed A.;Monkman, Andrew P.;Controlled energy transfer between isolated donor-acceptor molecules;intercalated in thermally self-ensemble two-dimensional hydrogen bonding;cages;PHYSICAL REVIEW B;86;23;235420;10.1103/PhysRevB.86.235420;DEC 13 2012;2012;Thermally assembled hydrogen bonding cages which are neither size nor;guest specific have been developed using a poly (vinyl alcohol) (PVA);host. A water-soluble conjugated polymer;poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium;salt-alt-1,4-phenylene) (PPP-OPSO3) as a donor and;tris(2,2-bipyridyl)-ruthenium(II) [Ru(bpy)(3)(2+)] as an acceptor have;been isolated and trapped in such a PVA matrix network. This is a unique;system that shows negligible exciton diffusion and the donor and;acceptor predominantly interact by a direct single step excitation;transfer process (DSSET). Singlet and triplet exciton quenching have;been studied. Time-resolved fluorescence lifetime measurement at;different acceptor concentrations has enabled us to determine the;dimensionality of the energy-transfer process within the PVA scaffold.;Our results reveal that the PVA hydrogen bonding network effectively;isolates the donor-acceptor molecules in a two-dimensional layer;structure (lamella) leading to the condition where a precise control of;the energy and charge transfer is possible.;Monkman, Andy/B-1521-2013;Monkman, Andy/0000-0002-0784-8640;0;0;0;0;0;1098-0121;WOS:000312291900005;;;J;Anzenberg, Eitan;Perkinson, Joy C.;Madi, Charbel S.;Aziz, Michael J.;Ludwig, Karl F., Jr.;Nanoscale surface pattern formation kinetics on germanium irradiated by;Kr+ ions;PHYSICAL REVIEW B;86;24;10.1103/PhysRevB.86.245412;DEC 13 2012;2012;Nanoscale surface topography evolution on Ge surfaces irradiated by 1;keV Kr+ ions is examined in both directions perpendicular and parallel;to the projection of the ion beam on the surface. Grazing incidence;small angle x-ray scattering is used to measure in situ the evolution of;surface morphology via the linear dispersion relation. A transition from;smoothing (stability) to pattern-forming instability is observed at a;critical ion incidence angle of approximately 62 degrees with respect to;the surface normal. The linear theory quadratic coefficients which;determine the surface stability/instability are determined as a function;of bombardment angle. The Ge surface evolution during Kr+ irradiation is;qualitatively similar to that observed for Ar+ irradiation of Si.;However, in contrast to the case of Si under Ar+ irradiation, the;critical angle separating stability and instability for Ge under Kr+;irradiation cannot be quantitatively reproduced by the simple;Carter-Vishnyakov mass redistribution model. DOI:;10.1103/PhysRevB.86.245412;5;0;0;0;5;1098-0121;WOS:000312292600006;;;J;Arnardottir, K. B.;Kyriienko, O.;Shelykh, I. A.;Hall effect for indirect excitons in an inhomogeneous magnetic field;PHYSICAL REVIEW B;86;24;245311;10.1103/PhysRevB.86.245311;DEC 13 2012;2012;We study the effect of an inhomogeneous out-of-plane magnetic field on;the behavior of two-dimensional (2D) spatially indirect excitons. Due to;the difference of the magnetic field acting on electrons and holes, the;total Lorentz force affecting the center of mass motion of an indirect;exciton appears. Consequently, an indirect exciton acquires an effective;charge proportional to the gradient of the magnetic field. The;appearance of the Lorentz force causes the Hall effect for neutral;bosons, which can be detected by measurement of the spatially;inhomogeneous blueshift of the photoluminescence using a counterflow;experiment. DOI: 10.1103/PhysRevB.86.245311;Kyriienko, Oleksandr/M-5163-2014;Kyriienko, Oleksandr/0000-0002-6259-6570;2;0;0;0;2;1098-0121;WOS:000312292600004;;;J;Baek, S. -H.;Loew, T.;Hinkov, V.;Lin, C. T.;Keimer, B.;Buechner, B.;Grafe, H. -J.;Evidence of a critical hole concentration in underdoped YBa2Cu3Oy single;crystals revealed by Cu-63 NMR;PHYSICAL REVIEW B;86;22;220504;10.1103/PhysRevB.86.220504;DEC 13 2012;2012;We report a Cu-63 NMR investigation in detwinned YBa2Cu3Oy single;crystals, focusing on the highly underdoped regime (y = 6.35-6.6).;Measurements of both the spectra and the spin-lattice relaxation rates;of Cu-63 uncover the emergence of static order at a well-defined onset;temperature T-0 with an as yet unknown order parameter. While T-0 is;rapidly suppressed with increasing hole doping concentration p, the spin;pseudogap was identified only near and above the doping content at which;T-0 -> 0. Our data indicate the presence of a critical hole doping p(c);similar to 0.1, which may control both the static order at p < p(c) and;the spin pseudogap at p > p(c). DOI: 10.1103/PhysRevB.86.220504;Baek, Seung-Ho/F-4733-2011;Baek, Seung-Ho/0000-0002-0059-8255;6;1;0;0;6;1098-0121;WOS:000312291200001;;;J;Bieri, Samuel;Serbyn, Maksym;Senthil, T.;Lee, Patrick A.;Paired chiral spin liquid with a Fermi surface in S=1 model on the;triangular lattice;PHYSICAL REVIEW B;86;22;224409;10.1103/PhysRevB.86.224409;DEC 13 2012;2012;Motivated by recent experiments on Ba3NiSb2O9, we investigate possible;quantum spin liquid ground states for spin S = 1 Heisenberg models on;the triangular lattice. We use variational Monte Carlo techniques to;calculate the energies of microscopic spin liquid wave functions where;spin is represented by three flavors of fermionic spinon operators.;These energies are compared with the energies of various competing;three-sublattice ordered states. Our approach shows that the;antiferromagnetic Heisenberg model with biquadratic term and single-ion;anisotropy does not have a low-temperature spin liquid phase. However,;for an SU(3)-invariant model with sufficiently strong ring-exchange;terms, we find a paired chiral quantum spin liquid with a Fermi surface;of deconfined spinons that is stable against all types of ordering;patterns we considered. We discuss the physics of this exotic spin;liquid state in relation to the recent experiment and suggest new ways;to test this scenario. DOI: 10.1103/PhysRevB.86.224409;Bieri, Samuel/L-1045-2013;11;0;0;0;11;1098-0121;WOS:000312291200002;;;J;Busch, M.;Seifert, J.;Meyer, E.;Winter, H.;Evidence for longitudinal coherence in fast atom diffraction;PHYSICAL REVIEW B;86;24;241402;10.1103/PhysRevB.86.241402;DEC 13 2012;2012;Angular distributions for grazing scattering of keV H atoms from an;Al2O3(11 (2) over bar0) surface were recorded. These distributions;reveal defined diffraction patterns which can be understood in terms of;quantum scattering from well-ordered surfaces. From the observation of;so-called Laue circles, we conclude a high degree of longitudinal;coherence for fast atom diffraction at surfaces which allows one to;resolve periodicity intervals of several 100 angstrom. We demonstrate;this feature in scattering experiments from the reconstructed (12 x 4);phase of an Al2O3(11 (2) over bar0) surface obtained after annealing at;temperatures of about 2000 K. DOI: 10.1103/PhysRevB.86.241402;4;0;0;0;4;1098-0121;WOS:000312292600002;;;J;Chen, Chien-Chun;Jiang, Huaidong;Rong, Lu;Salha, Sara;Xu, Rui;Mason, Thomas G.;Miao, Jianwei;Reply to "Comment on 'Three-dimensional imaging of a phase object from a;single sample orientation using an optical laser'";PHYSICAL REVIEW B;86;22;226102;10.1103/PhysRevB.86.226102;DEC 13 2012;2012;In a technical comment to our paper [Phys. Rev. B 84, 224104 (2011)],;Wei and Liu criticized our work without providing theoretical,;numerical, or experimental evidence. Furthermore, we believe they;misinterpreted our matrix rank analysis of ankylography and their;statements about our experiment are inaccurate. Below is our detailed;point-by-point response to their criticisms. DOI:;10.1103/PhysRevB.86.226102;Rong, Lu/L-6195-2014;Rong, Lu/0000-0003-4614-6411;0;0;0;0;0;1098-0121;WOS:000312291200004;;;J;Dubail, J.;Read, N.;Rezayi, E. H.;Edge-state inner products and real-space entanglement spectrum of trial;quantum Hall states;PHYSICAL REVIEW B;86;24;245310;10.1103/PhysRevB.86.245310;DEC 13 2012;2012;We consider the trial wave functions for the fractional quantum Hall;effect that are given by conformal blocks, and construct their;associated edge excited states in full generality. The inner products;between these edge states are computed in the thermodynamic limit,;assuming generalized screening (i.e., short-range correlations only);inside the quantum Hall droplet and using the language of boundary;conformal field theory (boundary CFT). These inner products take;universal values in this limit: they are equal to the corresponding;inner products in the bulk two-dimensional chiral CFT which underlies;the trial wave function. This is a bulk/edge correspondence; it shows;the equality between equal-time correlators along the edge and the;correlators of the bulk CFT up to a Wick rotation. This approach is then;used to analyze the entanglement spectrum of the ground state obtained;with a bipartition A boolean OR B in real space. Starting from our;universal result for inner products in the thermodynamic limit, we;tackle corrections to scaling using standard field-theoretic and;renormalization- group arguments. We prove that generalized screening;implies that the entanglement Hamiltonian H-E = -ln rho(A) is;isospectral to an operator that is local along the cut between A and B.;We also show that a similar analysis can be carried out for particle;partition. We discuss the close analogy between the formalism of trial;wave functions given by conformal blocks and tensor product states, for;which results analogous to ours have appeared recently. Finally, the;edge theory and entanglement spectrum of p(x) +/- ip(y) paired;superfluids are treated in a similar fashion in the Appendixes. DOI:;10.1103/PhysRevB.86.245310;Read, Nicholas/J-6030-2012;14;0;0;0;14;1098-0121;WOS:000312292600003;;;J;He, Jiangang;Franchini, Cesare;Screened hybrid functional applied to 3d(0)-> 3d(8) transition-metal;perovskites LaMO3 (M = Sc-Cu): Influence of the exchange mixing;parameter on the structural, electronic, and magnetic properties;PHYSICAL REVIEW B;86;23;235117;10.1103/PhysRevB.86.235117;DEC 13 2012;2012;We assess the performance of the Heyd-Scuseria-Ernzerhof (HSE) screened;hybrid density functional scheme applied to the perovskite family LaMO3;(M = Sc-Cu) and discuss the role of the mixing parameter alpha [which;determines the fraction of exact Hartree-Fock exchange included in the;density functional theory (DFT) exchange-correlation functional] on the;structural, electronic, and magnetic properties. The physical complexity;of this class of compounds, manifested by the largely varying electronic;characters (band/Mott-Hubbard/charge-transfer insulators and metals),;magnetic orderings, structural distortions (cooperative Jahn-Teller-type;instabilities), as well as by the strong competition between;localization/delocalization effects associated with the gradual filling;of the t(2g) and e(g) orbitals, symbolize a critical and challenging;case for theory. Our results indicate that HSE is able to provide a;consistent picture of the complex physical scenario encountered across;the LaMO3 series and significantly improve the standard DFT description.;The only exceptions are the correlated paramagnetic metals LaNiO3 and;LaCuO3, which are found to be treated better within DFT. By fitting the;ground-state properties with respect to alpha, we have constructed a set;of "optimum" values of alpha from LaScO3 to LaCuO3: it is found that the;optimum mixing parameter decreases with increasing filling of the d;manifold (LaScO3: 0.25; LaTiO3 and LaVO3: 0.10-0.15; LaCrO3, LaMnO3, and;LaFeO3: 0.15; LaCoO3: 0.05; LaNiO3 and LaCuO3: 0). This trend can be;nicely correlated with the modulation of the screening and dielectric;properties across the LaMO3 series, thus providing a physical;justification to the empirical fitting procedure. Finally, we show that;by using this set of optimum mixing parameter, HSE predict dielectric;constants in very good agreement with the experimental ones.;17;1;1;0;17;1098-0121;WOS:000312291900002;;;J;Imura, Ken-Ichiro;Yoshimura, Yukinori;Takane, Yositake;Fukui, Takahiro;Spherical topological insulator;PHYSICAL REVIEW B;86;23;235119;10.1103/PhysRevB.86.235119;DEC 13 2012;2012;The electronic spectrum on the spherical surface of a topological;insulator reflects an active property of the helical surface state that;stems from a constraint on its spin on a curved surface. The induced;spin connection can be interpreted as an effective vector potential;associated with a fictitious magnetic monopole induced at the center of;the sphere. The strength of the induced magnetic monopole is found to be;g = +/-2 pi, being the smallest finite (absolute) value compatible with;the Dirac quantization condition. We have established an explicit;correspondence between the bulk Hamiltonian and the effective Dirac;operator on the curved spherical surface. An explicit construction of;the surface spinor wave functions implies a rich spin texture possibly;realized on the surface of topological insulator nanoparticles. The;electronic spectrum inferred by the obtained effective surface Dirac;theory, confirmed also by the bulk tight-binding calculation, suggests a;specific photoabsorption/emission spectrum of such nanoparticles.;Imura, Ken/D-6633-2013;6;0;0;0;6;1098-0121;WOS:000312291900004;;;J;Kamburov, D.;Shayegan, M.;Winkler, R.;Pfeiffer, L. N.;West, K. W.;Baldwin, K. W.;Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic;fields;PHYSICAL REVIEW B;86;24;241302;10.1103/PhysRevB.86.241302;DEC 13 2012;2012;We report a severe, spin-dependent, Fermi contour anisotropy induced by;parallel magnetic field in a high-mobility (001) GaAs two-dimensional;hole system. Employing commensurability oscillations created by a;unidirectional, surface-strain-induced, periodic potential modulation,;we directly probe the anisotropy of the two spin subband Fermi contours.;Their areas are obtained from the Fourier transform of the Shubnikov-de;Haas oscillations. Our findings are in semiquantitative agreement with;the results of parameter-free calculations of the energy bands. DOI:;10.1103/PhysRevB.86.241302;5;0;0;0;5;1098-0121;WOS:000312292600001;;;J;Kourtis, Stefanos;Venderbos, Joern W. F.;Daghofer, Maria;Fractional Chern insulator on a triangular lattice of strongly;correlated t(2g) electrons;PHYSICAL REVIEW B;86;23;235118;10.1103/PhysRevB.86.235118;DEC 13 2012;2012;We discuss the low-energy limit of three-orbital Kondo-lattice and;Hubbard models describing t(2g) orbitals on a triangular lattice near;half-filling. We analyze how very flat single-particle bands with;nontrivial topological character, a Chern number C = +/-1, arise both in;the limit of infinite on-site interactions as well as in more realistic;regimes. Exact diagonalization is then used to investigate an effective;one-orbital spinless-fermion model at fractional fillings including;nearest-neighbor interaction V; it reveals signatures of fractional;Chern insulator (FCI) states for several filling fractions. In addition;to indications based on energies, e. g., flux insertion and fractional;statistics of quasiholes, Chern numbers are obtained. It is shown that;FCI states are robust against disorder in the underlying magnetic;texture that defines the topological character of the band. We also;investigate competition between a FCI state and a charge density wave;(CDW) and discuss the effects of particle-hole asymmetry and;Fermi-surface nesting. FCI states turn out to be rather robust and do;not require very flat bands, but can also arise when filling or an;absence of Fermi-surface nesting disfavor the competing CDW.;Nevertheless, very flat bands allow FCI states to be induced by weaker;interactions than those needed for more dispersive bands.;Daghofer, Maria/C-5762-2008;Daghofer, Maria/0000-0001-9434-8937;10;0;0;0;10;1098-0121;WOS:000312291900003;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;23;230001;10.1103/PhysRevB.86.230001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312291900001;;;J;Molenkamp, Laurens W.;Editorial: The End of PRB Brief Reports;PHYSICAL REVIEW B;86;21;210001;10.1103/PhysRevB.86.210001;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700001;;;J;Ochoa, H.;Castro Neto, A. H.;Fal'ko, V. I.;Guinea, F.;Spin-orbit coupling assisted by flexural phonons in graphene;PHYSICAL REVIEW B;86;24;245411;10.1103/PhysRevB.86.245411;DEC 13 2012;2012;We analyze the couplings between spins and phonons in graphene. We;present a complete analysis of the possible couplings between spins and;flexural, out-of-plane, vibrations. From tight-binding models, we obtain;analytical and numerical estimates of their strength. We show that;dynamical effects, induced by quantum and thermal fluctuations,;significantly enhance the spin-orbit gap. DOI:;10.1103/PhysRevB.86.245411;Guinea, Francisco/A-7122-2008; Castro Neto, Antonio/C-8363-2014;Guinea, Francisco/0000-0001-5915-5427; Castro Neto,;Antonio/0000-0003-0613-4010;9;1;0;0;9;1098-0121;WOS:000312292600005;;;J;Suewattana, Malliga;Singh, David J.;Limpijumnong, Sukit;Crystal structure and cation off-centering in Bi(Mg1/2Ti1/2)O-3 (vol 86,;064105, 2012);PHYSICAL REVIEW B;86;21;219903;10.1103/PhysRevB.86.219903;DEC 13 2012;2012;0;0;0;0;0;1098-0121;WOS:000312290700002;;;J;Wei, Haiqing;Liu, Shiyuan;Comment on "Three-dimensional imaging of a phase object from a single;sample orientation using an optical laser";PHYSICAL REVIEW B;86;22;226101;10.1103/PhysRevB.86.226101;DEC 13 2012;2012;A recent article by Chen et al. [Phys. Rev. B 84, 224104 (2011)];purports a "matrix rank analysis" and an optical experiment in support;of the three-dimensional (3D) imaging technique called "ankylography.";However, the mathematical analysis does not appear to be conclusive, and;the one used in the experiment is more a 3D-supported scattering object;of actually 2D complexity than a 3D-distributed scattering object of;truly 3D complexity. Consequently, the article provides little support;to the "ankylography" technique. DOI: 10.1103/PhysRevB.86.226101;Liu, Shiyuan/H-1463-2012;Liu, Shiyuan/0000-0002-0756-1439;1;0;0;0;1;1098-0121;WOS:000312291200003;;;J;Bobes, Omar;Zhang, Kun;Hofsaess, Hans;Ion beam induced surface patterns due to mass redistribution and;curvature-dependent sputtering;PHYSICAL REVIEW B;86;23;235414;10.1103/PhysRevB.86.235414;DEC 12 2012;2012;Recently it was reported that ion-induced mass redistribution would;solely determine nano pattern formation on ion-irradiated surfaces. We;investigate the pattern formation on amorphous carbon thin films;irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter;yield as well as number of displacements within the collision cascade;vary strongly as function of ion energy and allow us to investigate the;contributions of curvature-dependent erosion according to the;Bradley-Harper model as well as mass redistribution according to the;Carter-Vishnyakov model. We find parallel ripple orientations for an ion;incidence angle of 60 degrees and for all energies. A transition to;perpendicular pattern orientation or a rather flat surface occurs around;80 degrees for energies between 1 keV and 10 keV. Our results are;compared with calculations based on both models. For the calculations we;extract the shape and size of Sigmund's energy ellipsoid (parameters a,;sigma, mu), the angle-dependent sputter yield, and the mean mass;redistribution distance from the Monte Carlo simulations with program;SDTrimSP. The calculated curvature coefficients S-x and S-y describing;the height evolution of the surface show that mass redistribution is;dominant for parallel pattern formation in the whole energy regime.;Furthermore, the angle where the parallel pattern orientation starts to;disappear is related to curvature-dependent sputtering. In addition, we;investigate the case of Pt erosion with 200 eV Ne ions, where mass;redistribution vanishes. In this case, we observe perpendicular ripple;orientation in accordance with curvature-dependent sputtering and the;predictions of the Bradley-Harper model.;10;0;0;0;10;1098-0121;WOS:000312291600004;;;J;Bradlyn, Barry;Goldstein, Moshe;Read, N.;Kubo formulas for viscosity: Hall viscosity, Ward identities, and the;relation with conductivity;PHYSICAL REVIEW B;86;24;245309;10.1103/PhysRevB.86.245309;DEC 12 2012;2012;Motivated by recent work on Hall viscosity, we derive from first;principles the Kubo formulas for the stress-stress response function at;zero wave vector that can be used to define the full complex;frequency-dependent viscosity tensor, both with and without a uniform;magnetic field. The formulas in the existing literature are frequently;incomplete, incorrect, or lack a derivation; in particular, Hall;viscosity is overlooked. Our approach begins from the response to a;uniform external strain field, which is an active time-dependent;coordinate transformation in d space dimensions. These transformations;form the group GL(d, R) of invertible matrices, and the infinitesimal;generators are called strain generators. These enable us to express the;Kubo formula in different ways, related by Ward identities; some of;these make contact with the adiabatic transport approach. The importance;of retaining contact terms, analogous to the diamagnetic term in the;familiar Kubo formula for conductivity, is emphasized. For;Galilean-invariant systems, we derive a relation between the stress;response tensor and the conductivity tensor that is valid at all;frequencies and in both the presence and absence of a magnetic field. In;the presence of a magnetic field and at low frequency, this yields a;relation between the Hall viscosity, the q(2) part of the Hall;conductivity, the inverse compressibility (suitably defined), and the;diverging part of the shear viscosity (if any); this relation;generalizes a result found recently by others. We show that the correct;value of the Hall viscosity at zero frequency can be obtained (at least;in the absence of low-frequency bulk and shear viscosity) by assuming;that there is an orbital spin per particle that couples to a perturbing;electromagnetic field as a magnetization per particle. We study several;examples as checks on our formulation. We also present formulas for the;stress response that directly generalize the Berry (adiabatic) curvature;expressions for zero-frequency Hall conductivity or viscosity to the;full tensors at all frequencies. DOI: 10.1103/PhysRevB.86.245309;Read, Nicholas/J-6030-2012;21;0;0;0;21;1098-0121;WOS:000312292400010;;;J;Calvo, Hernan L.;Classen, Laura;Splettstoesser, Janine;Wegewijs, Maarten R.;Interaction-induced charge and spin pumping through a quantum dot at;finite bias;PHYSICAL REVIEW B;86;24;245308;10.1103/PhysRevB.86.245308;DEC 12 2012;2012;We investigate charge and spin transport through an adiabatically;driven, strongly interacting quantum dot weakly coupled to two metallic;contacts with finite bias voltage. Within a kinetic equation approach,;we identify coefficients of response to the time-dependent external;driving and relate these to the concepts of charge and spin emissivities;previously discussed within the time-dependent scattering matrix;approach. Expressed in terms of auxiliary vector fields, the response;coefficients allow for a straightforward analysis of recently predicted;interaction-induced pumping under periodic modulation of the gate and;bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)].;We perform a detailed study of this effect and the related adiabatic;Coulomb blockade spectroscopy, and, in particular, extend it to spin;pumping. Analytic formulas for the pumped charge and spin in the regimes;of small and large driving amplitude are provided for arbitrary bias. In;the absence of a magnetic field, we obtain a striking, simple relation;between the pumped charge at zero bias and at bias equal to the Coulomb;charging energy. At finite magnetic field, there is a possibility to;have interaction-induced pure spin pumping at this finite bias value,;and generally, additional features appear in the pumped charge. For;large-amplitude adiabatic driving, the magnitude of both the pumped;charge and spin at the various resonances saturates at values which are;independent of the specific shape of the pumping cycle. Each of these;values provides an independent, quantitative measure of the junction;asymmetry. DOI: 10.1103/PhysRevB.86.245308;Calvo, Hernan/D-9825-2011; Wegewijs, Maarten/A-3512-2012; Splettstoesser, Janine/B-4003-2012;Wegewijs, Maarten/0000-0002-2972-3822;;6;0;1;0;6;1098-0121;WOS:000312292400009;;;J;Drummond, David;Pryadko, Leonid P.;Shtengel, Kirill;Suppression of hyperfine dephasing by spatial exchange of double quantum;dots;PHYSICAL REVIEW B;86;24;245307;10.1103/PhysRevB.86.245307;DEC 12 2012;2012;We examine the logical qubit system of a pair of electron spins in;double quantum dots. Each electron experiences a different hyperfine;interaction with the local nuclei of the lattice, leading to a relative;phase difference, and thus decoherence. Methods such as nuclei;polarization, state narrowing, and spin-echo pulses have been proposed;to delay decoherence. Instead we propose to suppress hyperfine dephasing;by the adiabatic rotation of the dots in real space, leading to the same;average hyperfine interaction. We show that the additional effects due;to the motion in the presence of spin-orbit coupling are still smaller;than the hyperfine interaction, and result in an infidelity below 10(-4);after ten decoupling cycles. We discuss a possible experimental setup;and physical constraints for this proposal. DOI:;10.1103/PhysRevB.86.245307;0;0;0;0;0;1098-0121;WOS:000312292400008;;;J;Estienne, B.;Regnault, N.;Bernevig, B. A.;D-algebra structure of topological insulators;PHYSICAL REVIEW B;86;24;241104;10.1103/PhysRevB.86.241104;DEC 12 2012;2012;In the quantum Hall effect, the density operators at different wave;vectors generally do not commute and give rise to the Girvin-MacDonald-;Plazmann (GMP) algebra, with important consequences such as ground-state;center-of-mass degeneracy at fractional filling fraction, and;W1+infinity symmetry of the filled Landau levels. We show that the;natural generalization of the GMP algebra to higher-dimensional;topological insulators involves the concept of a D commutator. For;insulators in even-dimensional space, the D commutator is isotropic and;closes, and its structure factors are proportional to the D/2 Chern;number. In odd dimensions, the algebra is not isotropic, contains the;weak topological insulator index (layers of the topological insulator in;one fewer dimension), and does not contain the Chern-Simons theta form.;This algebraic structure paves the way towards the identification of;fractional topological insulators through the counting of their;excitations. The possible relation to D-dimensional volume-preserving;diffeomorphisms and parallel transport of extended objects is also;discussed. DOI: 10.1103/PhysRevB.86.241104;7;0;0;0;7;1098-0121;WOS:000312292400001;;;J;Gingrich, E. C.;Quarterman, P.;Wang, Yixing;Loloee, R.;Pratt, W. P., Jr.;Birge, Norman O.;Spin-triplet supercurrent in Co/Ni multilayer Josephson junctions with;perpendicular anisotropy;PHYSICAL REVIEW B;86;22;224506;10.1103/PhysRevB.86.224506;DEC 12 2012;2012;We have measured spin-triplet supercurrent in Josephson junctions of the;form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer;with in-plane magnetization, and F is a Ni/[Co/Ni](n) multilayer with;out-of-plane magnetization. The supercurrent in these junctions decays;very slowly with F-layer thickness and is much larger than in similar;junctions not containing the two F' layers. Those two features are the;characteristic signatures of spin-triplet supercurrent, which is;maximized by the orthogonality of the magnetizations in the F and F';layers. Magnetic measurements confirm the out-of-plane anisotropy of the;Co/Ni multilayers. These samples have their critical current optimized;in the as-prepared state, which will be useful for future applications.;DOI: 10.1103/PhysRevB.86.224506;7;1;0;0;7;1098-0121;WOS:000312291100001;;;J;Golub, Anatoly;Grosfeld, Eytan;Charge resistance in a Majorana RC circuit;PHYSICAL REVIEW B;86;24;241105;10.1103/PhysRevB.86.241105;DEC 12 2012;2012;We investigate the dynamical charge response in a "Majorana Coulomb box";realized by two Majorana bound states hosted at the ends of a mesoscopic;topological superconductor. One side of the wire is coupled to a normal;lead and low frequency gate voltage is applied to the system. There is;no dc current; the system can be considered as an RC quantum circuit. We;calculate the effective capacitance and charge relaxation resistance.;The latter is in agreement with the Korringa-Shiba formula where,;however, the charge relaxation resistance is equal to h/2e(2). This;value corresponds to the strong Coulomb blockade limit described by a;resonant model formulated by Fu [Phys. Rev. Lett. 104, 056402 (2010)].;We also performed direct calculations using the latter model and defined;its parameters by direct comparison with our perturbation theory;results. DOI: 10.1103/PhysRevB.86.241105;4;1;0;0;4;1098-0121;WOS:000312292400002;;;J;Guenter, T.;Rubano, A.;Paparo, D.;Lilienblum, M.;Marrucci, L.;Granozio, F. Miletto;di Uccio, U. Scotti;Jany, R.;Richter, C.;Mannhart, J.;Fiebig, M.;Spatial inhomogeneities at the LaAlO3/SrTiO3 interface: Evidence from;second harmonic generation;PHYSICAL REVIEW B;86;23;235418;10.1103/PhysRevB.86.235418;DEC 12 2012;2012;Phase-sensitive, spatially resolved optical second-harmonic-generation;experiments were performed on LaAlO3/SrTiO3 heterostructures. Lateral;inhomogeneities on a length scale of approximate to 30 mu m are found;when a one-unit-cell-thick epitaxial monolayer of LaAlO3 is grown on;TiO2-terminated SrTiO3 single crystals. The inhomogeneity is absent in;samples with LaAlO3 layers of more than one unit cell. The results are;discussed in the framework of electronic, oxidic, and chemical;inhomogeneities.;Marrucci, Lorenzo/A-4331-2012; Richter, Christoph/A-6172-2013;Marrucci, Lorenzo/0000-0002-1154-8966; Richter,;Christoph/0000-0002-6591-1118;7;0;0;0;7;1098-0121;WOS:000312291600008;;;J;Huang, Zhoushen;Arovas, Daniel P.;Entanglement spectrum and Wannier center flow of the Hofstadter problem;PHYSICAL REVIEW B;86;24;245109;10.1103/PhysRevB.86.245109;DEC 12 2012;2012;We examine the quantum entanglement spectra and Wannier functions of the;square lattice Hofstadter model. Consistent with previous work on;entanglement spectra of topological band structures, we find that the;entanglement levels exhibit a spectral flow similar to that of the full;system's energy spectrum. While the energy spectra are continuous, with;cylindrical boundary conditions the entanglement spectra exhibit;discontinuities associated with the passage of an energy edge state;through the Fermi level. We show how the entanglement spectrum can be;understood by examining the band projectors of the full system and their;behavior under adiabatic pumping. In so doing we make connections with;the original work by Thouless, Kohmoto, Nightingale, and den Nijs (TKNN);[Phys. Rev. Lett. 49, 405 (1982)] on topological two-dimensional band;structures and their Chern numbers. Finally, we consider Wannier states;and their adiabatic flows and draw connections to the entanglement;properties. DOI: 10.1103/PhysRevB.86.245109;5;0;0;0;5;1098-0121;WOS:000312292400003;;;J;Humeniuk, Stephan;Roscilde, Tommaso;Quantum Monte Carlo calculation of entanglement Renyi entropies for;generic quantum systems;PHYSICAL REVIEW B;86;23;235116;10.1103/PhysRevB.86.235116;DEC 12 2012;2012;We present a general scheme for the calculation of the Renyi entropy of;a subsystem in quantum many-body models that can be efficiently;simulated via quantum Monte Carlo. When the simulation is performed at;very low temperature, the above approach delivers the entanglement Renyi;entropy of the subsystem, and it allows us to explore the crossover to;the thermal Renyi entropy as the temperature is increased. We implement;this scheme explicitly within the stochastic series expansion as well as;within path-integral Monte Carlo, and apply it to quantum spin and;quantum rotor models. In the case of quantum spins, we show that;relevant models in two dimensions with reduced symmetry (XX model or;hard-core bosons, transverse-field Ising model at the quantum critical;point) exhibit an area law for the scaling of the entanglement entropy.;23;0;0;0;23;1098-0121;WOS:000312291600002;;;J;Jacobs, Th;Katterwe, S. O.;Motzkau, H.;Rydh, A.;Maljuk, A.;Helm, T.;Putzke, C.;Kampert, E.;Kartsovnik, M. V.;Krasnov, V. M.;Electron-tunneling measurements of low-T-c single-layer;Bi2+xSr2-yCuO6+delta: Evidence for a scaling disparity between;superconducting and pseudogap states;PHYSICAL REVIEW B;86;21;214506;10.1103/PhysRevB.86.214506;DEC 12 2012;2012;We experimentally study intrinsic tunneling and high magnetic field (up;to 65 T) transport characteristics of the single-layer cuprate;Bi2+xSr2-yCuO6+delta, with a very low superconducting critical;temperature T-c less than or similar to 4 K. It is observed that the;superconducting gap, the collective bosonic mode energy, the upper;critical field, and the fluctuation temperature range are scaling down;with T-c, while the corresponding pseudogap characteristics remain the;same as in high-T-c cuprates with 20 to 30 times higher T-c. The;observed disparity of the superconducting and pseudogap scales clearly;reveals their different origins. DOI: 10.1103/PhysRevB.86.214506;Kartsovnik, Mark/E-3598-2013; Rydh, Andreas/A-7068-2012;Kartsovnik, Mark/0000-0002-3011-0169; Rydh, Andreas/0000-0001-6641-4861;4;1;0;0;4;1098-0121;WOS:000312290600002;;;J;Klinovaja, Jelena;Ferreira, Gerson J.;Loss, Daniel;Helical states in curved bilayer graphene;PHYSICAL REVIEW B;86;23;235416;10.1103/PhysRevB.86.235416;DEC 12 2012;2012;We study spin effects of quantum wires formed in bilayer graphene by;electrostatic confinement. With a proper choice of the confinement;direction, we show that in the presence of magnetic field, spin orbit;interaction induced by curvature, and intervalley scattering, bound;states emerge that are helical. The localization length of these helical;states can be modulated by the gate voltage which enables the control of;the tunnel coupling between two parallel wires. Allowing for proximity;effect via an s-wave superconductor, we show that the helical modes give;rise to Majorana fermions in bilayer graphene.;J. Ferreira, Gerson/K-1948-2013; Klinovaja, Jelena/L-2510-2013; Loss, Daniel/A-3721-2008;J. Ferreira, Gerson/0000-0002-4933-3119; Loss,;Daniel/0000-0001-5176-3073;17;0;0;0;17;1098-0121;WOS:000312291600006;;;J;Lee, Wei-Cheng;Phillips, Philip W.;Non-Fermi liquid due to orbital fluctuations in iron pnictide;superconductors;PHYSICAL REVIEW B;86;24;245113;10.1103/PhysRevB.86.245113;DEC 12 2012;2012;We study the influence of quantum fluctuations on the electron;self-energy in the normal state of iron pnictide superconductors using a;five-orbital tight-binding model with generalized Hubbard on-site;interactions. Within a one-loop treatment, we find that an overdamped;collective mode develops at low frequency in channels associated with;quasi-one-dimensional d(xz) and d(yz) bands. When the critical point for;the C-4-symmetry-broken phase (structural phase transition) is;approached, the overdamped collective modes soften, and acquire;increased spectral weight, resulting in non-Fermi-liquid behavior at the;Fermi surface characterized by a frequency dependence of the imaginary;part of the electron self-energy of the form. omega(lambda), 0 < lambda;< 1. We argue that this non-Fermi-liquid behavior is responsible for the;recently observed zero-bias enhancement in the tunneling signal in;point-contact spectroscopy. A key experimental test of this proposal is;the absence of non-Fermi-liquid behavior in the hole-doped materials.;Our result suggests that quantum criticality plays an important role in;understanding the normal-state properties of iron pnictide;superconductors. DOI: 10.1103/PhysRevB.86.245113;11;0;0;0;11;1098-0121;WOS:000312292400007;;;J;McKenna, Keith P.;Blumberger, Jochen;Crossover from incoherent to coherent electron tunneling between defects;in MgO;PHYSICAL REVIEW B;86;24;245110;10.1103/PhysRevB.86.245110;DEC 12 2012;2012;Long-range electron tunneling is a fundamental process that is critical;to the performance of oxide materials in microelectronics, energy;generation, and photocatalysis, but extremely challenging to probe;experimentally. Here we devise a computational approach that allows one;to probe the mechanism and calculate the rate of electron transfer (ET);in such materials from first principles. Application to ET between;defects in MgO reveals that the activation energy for ET depends;strongly on defect separation, an effect not usually taken into account;in semiempirical models of ET processes in oxides. Importantly, for;distances below a critical defect separation (6 angstrom), the nature of;ET changes from incoherent to coherent tunneling, suggesting that;existing empirical models require essential modifications. These;calculations extend first-principles modeling of ET in oxides to the;regime of long-range incoherent transport, an outstanding problem;important for modeling many processes of technological relevance. DOI:;10.1103/PhysRevB.86.245110;Blumberger, Jochen/L-5949-2013; McKenna, Keith/A-5084-2010;6;1;0;0;6;1098-0121;WOS:000312292400004;;;J;Mol, L. A. S.;Pereira, A. R.;Moura-Melo, W. A.;Extending spin ice concepts to another geometry: The artificial;triangular spin ice (vol 85, 184410, 2012);PHYSICAL REVIEW B;86;21;219902;10.1103/PhysRevB.86.219902;DEC 12 2012;2012;Mol, Lucas/D-9575-2013;Mol, Lucas/0000-0002-5001-0499;0;0;0;0;0;1098-0121;WOS:000312290600003;;;J;Palotas, Krisztian;Mandi, Gabor;Szunyogh, Laszlo;Orbital-dependent electron tunneling within the atom superposition;approach: Theory and application to W(110);PHYSICAL REVIEW B;86;23;235415;10.1103/PhysRevB.86.235415;DEC 12 2012;2012;We introduce an orbital-dependent electron tunneling model and implement;it within the atom superposition approach for simulating scanning;tunneling microscopy (STM) and spectroscopy (STS). Applying our method,;we analyze the convergence and the orbital contributions to the;tunneling current and the corrugation of constant-current STM images;above the W(110) surface. In accordance with a previous study [Heinze et;al., Phys. Rev. B 58, 16432 (1998)], we find atomic contrast reversal;depending on the bias voltage. Additionally, we analyze this effect;depending on the tip-sample distance using different tip models and find;two qualitatively different behaviors based on the tip orbital;composition. As an explanation, we highlight the role of the real-space;shape of the orbitals involved in the tunneling. STM images calculated;by our model agree well with those obtained using Tersoff and Hamann's;and Bardeen's approaches. The computational efficiency of our model is;remarkable as the k-point samplings of the surface and tip Brillouin;zones do not affect the computation time, in contrast to the Bardeen;method.;Palotas, Krisztian/C-5338-2009;5;0;0;0;5;1098-0121;WOS:000312291600005;;;J;Rodrigues, J. N. B.;Peres, N. M. R.;Lopes dos Santos, J. M. B.;Scattering by linear defects in graphene: A continuum approach;PHYSICAL REVIEW B;86;21;214206;10.1103/PhysRevB.86.214206;DEC 12 2012;2012;We study the low-energy electronic transport across periodic extended;defects in graphene. In the continuum low-energy limit, such defects act;as infinitessimally thin stripes separating two regions where the Dirac;Hamiltonian governs the low-energy phenomena. The behavior of these;systems is defined by the boundary condition imposed by the defect on;the massless Dirac fermions. We demonstrate how this low-energy boundary;condition can be computed from the tight-binding model of the defect;line. For simplicity we consider defect lines oriented along the zigzag;direction, which requires the consideration of only one copy of the;Dirac equation. Three defect lines of this kind are studied and shown to;be mappable between them: the pentagon-only, the zz(558), and the;zz(5757) defect lines. In addition, in this same limit, we calculate the;conductance across such defect lines with size L and find it to be;proportional to k(F)L at low temperatures. DOI:;10.1103/PhysRevB.86.214206;6;0;0;0;6;1098-0121;WOS:000312290600001;;;J;Saloriutta, Karri;Uppstu, Andreas;Harju, Ari;Puska, Martti J.;Ab initio transport fingerprints for resonant scattering in graphene;PHYSICAL REVIEW B;86;23;235417;10.1103/PhysRevB.86.235417;DEC 12 2012;2012;We have recently shown that by using a scaling approach for randomly;distributed topological defects in graphene, reliable estimates for;transmission properties of macroscopic samples can be calculated based;even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85,;041401 (2012)]. We now extend this approach of energy-dependent;scattering cross sections to the case of adsorbates on graphene by;studying hydrogen and carbon adatoms as well as epoxide and hydroxyl;groups. We show that a qualitative understanding of resonant scattering;can be gained through density functional theory results for a;single-defect system, providing a transmission "fingerprint";characterizing each adsorbate type. This information can be used to;reliably predict the elastic mean free path for moderate defect;densities directly using ab initio methods. We present tight-binding;parameters for carbon and epoxide adsorbates, obtained to match the;density-functional theory based scattering cross sections.;Puska, Martti/E-7362-2012; Harju, Ari/C-2828-2009;Harju, Ari/0000-0002-2233-2896;4;0;0;0;4;1098-0121;WOS:000312291600007;;;J;Schuster, R.;Pyon, S.;Knupfer, M.;Azuma, M.;Takano, M.;Takagi, H.;Buechner, B.;Angle-dependent spectral weight transfer and evidence of a;symmetry-broken in-plane charge response in Ca1.9Na0.1CuO2Cl2;PHYSICAL REVIEW B;86;24;245112;10.1103/PhysRevB.86.245112;DEC 12 2012;2012;We report about the energy and momentum dependent charge response in;Ca1.9Na0.1CuO2Cl2 employing electron energy-loss spectroscopy. Along the;diagonal of the Brillouin zone (BZ) we find a plasmon peak-indicating;the presence of metallic states in this momentum region-which emerges as;a consequence of substantial spectral-weight transfer from excitations;across the charge-transfer (CT) gap and is the two-particle;manifestation of the small Fermi pocket or arc observed with;photoemission in this part of the BZ. In contrast, the spectrum along;the [100] direction is almost entirely dominated by CT excitations,;reminiscent of the insulating parent compound. We argue that the;observed polarization dependent shape of the spectrum is suggestive of a;breaking of the underlying tetragonal lattice symmetry, possibly due to;fluctuating nematic order in the charge channel. In addition we find the;plasmon bandwidth to be suppressed compared to optimally doped cuprates.;DOI: 10.1103/PhysRevB.86.245112;Takagi, Hidenori/B-2935-2010; PYON, Sunseng/B-2618-2011; Azuma, Masaki/C-2945-2009;0;0;0;0;0;1098-0121;WOS:000312292400006;;;J;Swingle, Brian;Experimental signatures of three-dimensional fractional topological;insulators;PHYSICAL REVIEW B;86;24;245111;10.1103/PhysRevB.86.245111;DEC 12 2012;2012;In this paper we explore experimental signatures of fractional;topological insulators in three dimensions. These are states of matter;with a fully gapped bulk that host exotic gapless surface states and;fractionally charged quasiparticles. They are partially characterized by;a nontrivial magneto-electric response while preserving time reversal.;We describe how these phases appear in a variety of probes including;photoemmission, tunneling, and quantum oscillations. We also discuss the;effects of doping and proximate superconductivity. We argue that despite;our current theoretical inability to predict materials where such phases;will be realized, they should be relatively easy to detect;experimentally. DOI:10.1103/PhysRevB.86.245111;0;0;0;0;0;1098-0121;WOS:000312292400005;;;J;Thomas, Mark;Romito, Alessandro;Decoherence effects on weak value measurements in double quantum dots;PHYSICAL REVIEW B;86;23;235419;10.1103/PhysRevB.86.235419;DEC 12 2012;2012;We study the effect of decoherence on a weak value measurement in a;paradigm system consisting of a double quantum dot continuously measured;by a quantum point contact. Fluctuations of the parameters controlling;the dot state induce decoherence. We find that, for measurements longer;than the decoherence time, weak values are always reduced within the;range of the eigenvalues of the measured observable. For measurements at;shorter time scales, the measured weak value strongly depends on the;interplay between the decoherence dynamics of the system and the;detector backaction. In particular, depending on the postselected state;and the strength of the decoherence, a more frequent classical readout;of the detector might lead to an enhancement of weak values.;Romito, Alessandro/L-3564-2013;Romito, Alessandro/0000-0003-3082-6279;1;0;0;0;1;1098-0121;WOS:000312291600009;;;J;Witczak-Krempa, William;Sachdev, Subir;Quasinormal modes of quantum criticality;PHYSICAL REVIEW B;86;23;235115;10.1103/PhysRevB.86.235115;DEC 12 2012;2012;We study charge transport of quantum critical points described by;conformal field theories in 2 + 1 space-time dimensions. The transport;is described by an effective field theory on an asymptotically anti-de;Sitter space-time, expanded to fourth order in spatial and temporal;gradients. The presence of a horizon at nonzero temperatures implies;that this theory has quasinormal modes with complex frequencies. The;quasinormal modes determine the poles and zeros of the conductivity in;the complex frequency plane, and so fully determine its behavior on the;real frequency axis, at frequencies both smaller and larger than the;absolute temperature. We describe the role of particle-vortex or S;duality on the conductivity, specifically how it maps poles to zeros and;vice versa. These analyses motivate two sum rules obeyed by the quantum;critical conductivity: the holographic computations are the first to;satisfy both sum rules, while earlier Boltzmann-theory computations;satisfy only one of them. Finally, we compare our results with the;analytic structure of the O(N) model in the large-N limit, and other;CFTs.;Sachdev, Subir/A-8781-2013;Sachdev, Subir/0000-0002-2432-7070;13;0;0;0;13;1098-0121;WOS:000312291600001;;;J;Zielke, Robert;Braunecker, Bernd;Loss, Daniel;Cotunneling in the v=5/2 fractional quantum Hall regime;PHYSICAL REVIEW B;86;23;235307;10.1103/PhysRevB.86.235307;DEC 12 2012;2012;We show that cotunneling in the 5/2 fractional quantum Hall regime;allows us to test the Moore-Read wave function, proposed for this;regime, and to probe the nature of the fractional charge carriers. We;calculate the cotunneling current for electrons that tunnel between two;quantum Hall edge states via a quantum dot and for quasiparticles with;fractional charges e/4 and e/2 that tunnel via an antidot. While;electron cotunneling is strongly suppressed, the quasiparticle tunneling;shows signatures characteristic of the Moore-Read state. For comparison,;we also consider cotunneling between Laughlin states, and find that;electron transport between Moore-Read states and between Laughlin states;at filling factor 1/3 have identical voltage dependences.;Loss, Daniel/A-3721-2008;Loss, Daniel/0000-0001-5176-3073;0;0;0;0;0;1098-0121;WOS:000312291600003;;;J;de Andres, P. L.;Guinea, F.;Katsnelson, M. I.;Density functional theory analysis of flexural modes, elastic constants,;and corrugations in strained graphene;PHYSICAL REVIEW B;86;24;245409;10.1103/PhysRevB.86.245409;DEC 11 2012;2012;Ab initio density functional theory has been used to analyze flexural;modes, elastic constants, and atomic corrugations on single-and bi-layer;graphene. Frequencies of flexural modes are sensitive to compressive;stress; its variation under stress can be related to the anomalous;thermal expansion via a simple model based in classical elasticity;theory [P. L. de Andres, F. Guinea, and M. I. Katsnelson, Phys. Rev. B;86, 144103 (2012)]. Under compression, flexural modes are responsible;for a long-wavelength rippling with a large amplitude and a marked;anharmonic behavior. This is compared with corrugations created by;thermal fluctuations and the adsorption of a light impurity (hydrogen).;Typical values for the later are in the sub-Angstrom regime, while;maximum corrugations associated to bending modes quickly increase up to;a few Angstroms under a compressive stress, due to the intrinsic;instability of flexural modes. DOI: 10.1103/PhysRevB.86.245409;Katsnelson, Mikhail/D-4359-2012; Guinea, Francisco/A-7122-2008; de Andres, Pedro/B-2043-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Guinea, Francisco/0000-0001-5915-5427;;8;1;0;0;8;1098-0121;WOS:000312292100004;;;J;Glaessl, M.;Axt, V. M.;Polarization dependence of phonon influences in exciton-biexciton;quantum dot systems;PHYSICAL REVIEW B;86;24;245306;10.1103/PhysRevB.86.245306;DEC 11 2012;2012;We report on a strong dependence of the phonon-induced damping of Rabi;dynamics in an optically driven exciton-biexciton quantum dot system on;the polarization of the exciting pulse. While for a fixed pulse;intensity the damping is maximal for linearly polarized excitation, it;decreases with increasing ellipticity of the polarization. This finding;is most remarkable considering that the carrier-phonon coupling is spin;independent. In addition to simulations based on a numerically exact;real-time path-integral approach, we present an analysis within a;weak-coupling theory that allows for analytical expressions for the;pertinent damping rates. We demonstrate that an efficient coupling to;the biexciton state is of central importance for the reported;polarization dependencies. Further, we discuss influences of various;system parameters and show that, for finite biexciton binding energies,;Rabi scenarios differ qualitatively from the widely studied two-level;dynamics. DOI: 10.1103/PhysRevB.86.245306;2;0;0;0;2;1098-0121;WOS:000312292100003;;;J;Ishioka, J.;Fujii, T.;Katono, K.;Ichimura, K.;Kurosawa, T.;Oda, M.;Tanda, S.;Reply to "Comment on 'Charge-parity symmetry observed through Friedel;oscillations in chiral charge-density waves' ";PHYSICAL REVIEW B;86;24;247102;10.1103/PhysRevB.86.247102;DEC 11 2012;2012;We are responding to the Comment by J. Wezel on our paper. This study;was developed from our previous work [Ishioka et al., Phys. Rev. Lett.;105, 176401 (2010)]. In the PRL paper, H-CDW was defined as a new;parameter for expressing CDW chirality for the first time. In his;Comment, he claims that H-CDW is ill defined. He also claims that the;initial phase phi of the CDW wave function is a more appropriate;parameter for expressing chiral CDW, despite our early introduction of;phi to explain the experimental data described in the PRL paper.;However, we conclude that H-CDW can distinguish the CDW chirality by its;sign. Moreover, by considering different H-CDW signs, we had succeeded;in demonstrating the difference of the spatial distributions of CDWs as;shown in Fig. 4 of the PRB paper [Phys. Rev. B 84, 245125 (2011)]. In;our Reply, we discuss the validity of H-CDW. We show that his argument;regarding the identification of the CDW with the opposite sign of q is;wrong, since the logic is inapplicable to a wave function with a nonzero;phi. We also discuss the applicability of H-CDW to two- or;three-dimensional CDWs in transition metal dichalcogenides. DOI:;10.1103/PhysRevB.86.247102;0;0;0;0;0;1098-0121;WOS:000312292100007;;;J;Kallos, Efthymios;Chremmos, Ioannis;Yannopapas, Vassilios;Resonance properties of optical all-dielectric metamaterials using;two-dimensional multipole expansion;PHYSICAL REVIEW B;86;24;245108;10.1103/PhysRevB.86.245108;DEC 11 2012;2012;We examine the electromagnetic response of metamaterial unit elements;consisting of dielectric rods embedded in a nonmagnetic background;medium. We establish a theoretical framework in which the response is;described through the electric and magnetic multipole moments that are;simultaneously generated via the polarization currents that are excited;upon the incidence of plane waves. The corresponding dipole and;quadrupole polarizabilities are then calculated as a function of the Mie;scattering coefficients, and their resonances are mapped for the case of;dielectric cylindrical rods as a function of the geometry and the;material parameters used. The results provide critical insight into the;anisotropic response of two-dimensional rod-type metamaterials and can;be used as a unified methodology in the calculation of exotic effective;electromagnetic parameters involved in phenomena such as optical;magnetism. DOI: 10.1103/PhysRevB.86.245108;5;0;0;0;5;1098-0121;WOS:000312292100001;;;J;Lim, Linda Y.;Lany, Stephan;Chang, Young Jun;Rotenberg, Eli;Zunger, Alex;Toney, Michael F.;Angle-resolved photoemission and quasiparticle calculation of ZnO: The;need for d band shift in oxide semiconductors;PHYSICAL REVIEW B;86;23;235113;10.1103/PhysRevB.86.235113;DEC 11 2012;2012;ZnO is a prototypical semiconductor with occupied d(10) bands that;interact with the anion p states and is thus challenging for electronic;structure theories. Within the context of these theories, incomplete;cancellation of the self-interaction energy results in a Zn d band that;is too high in energy, resulting in upwards repulsion of the valence;band maximum (VBM) states, and an unphysical reduction of the band gap.;Methods such as GW should significantly reduce the self-interaction;error, and in order to evaluate such calculations, we measured;high-resolution and resonant angle-resolved photoemission spectroscopy;(ARPES) and compared these to several electronic structure calculations.;We find that, in a standard GW calculation, the d bands remain too high;in energy by more than 1 eV irrespective of the Hamiltonian used for;generating the input wave functions, causing a slight underestimation of;the band gap due to the p-d repulsion. We show that a good agreement;with the ARPES data over the full valence band spectrum is obtained,;when the Zn-d band energy is shifted down by applying an on-site;potential V-d for Zn-d states during the GW calculations to match the;measured d band position. The magnitude of the GW quasiparticle energy;shift relative to the initial density functional calculation is of;importance for the prediction of charged defect formation energies,;band-offsets, and ionization potentials. DOI: 10.1103/PhysRevB.86.235113;Zunger, Alex/A-6733-2013; Lim, Ying Wen Linda/A-8608-2012; Rotenberg, Eli/B-3700-2009; Chang, Young Jun/N-3440-2014;Rotenberg, Eli/0000-0002-3979-8844; Chang, Young Jun/0000-0001-5538-0643;15;0;0;0;15;1098-0121;WOS:000312291700002;;;J;Liu, Tao;Lee, Kenneth E.;Wang, Qi Jie;Microscopic density matrix model for optical gain of terahertz quantum;cascade lasers: Many-body, nonparabolicity, and resonant tunneling;effects;PHYSICAL REVIEW B;86;23;235306;10.1103/PhysRevB.86.235306;DEC 11 2012;2012;Intersubband semiconductor-Bloch equations are investigated by;incorporating many-body Coulomb interaction, nonparabolicity, and;coherence of resonant tunneling transport in a quantitative way based on;the density matrix theory. The calculations demonstrate the importance;of these parameters on optical properties, especially the optical gain;spectrum, of terahertz (THz) quantum cascade lasers (QCLs). The results;show that the lasing frequency at gain peak calculated by the proposed;microscopic density matrix model is closer to the experimentally;measured result, compared with that calculated by the existing;macroscopic density matrix model. Specifically, both the many-body;interaction and nonparabolicity effects red-shift the gain spectrum and;reduce the gain peak. In addition, as the injection-coupling strength;increases, the gain peak value is enhanced and the spectrum is slightly;broadened, while an increase of the extraction-coupling strength reduces;the gain peak value and broadens the gain spectrum. The dependence of;optical gain of THz QCLs on device parameters such as external;electrical bias, dephasing rate, doping density, and temperature is also;systematically studied in details. This model provides a more;comprehensive picture of the optical properties of THz QCLs from a;microscopic point of view and potentially enables a more accurate and;faster prediction and calculation of the device performance, e. g., gain;spectra, current-voltage characteristics, optical output powers, and;nonlinear amplitude-phase coupling. DOI: 10.1103/PhysRevB.86.235306;Wang, Qi Jie/E-6987-2010;5;0;0;0;5;1098-0121;WOS:000312291700004;;;J;Pedersen, Jesper Goor;Gunst, Tue;Markussen, Troels;Pedersen, Thomas Garm;Graphene antidot lattice waveguides;PHYSICAL REVIEW B;86;24;245410;10.1103/PhysRevB.86.245410;DEC 11 2012;2012;We introduce graphene antidot lattice waveguides: nanostructured;graphene where a region of pristine graphene is sandwiched between;regions of graphene antidot lattices. The band gaps in the surrounding;antidot lattices enable localized states to emerge in the central;waveguide region. We model the waveguides via a position-dependent mass;term in the Dirac approximation of graphene and arrive at analytical;results for the dispersion relation and spinor eigenstates of the;localized waveguide modes. To include atomistic details we also use a;tight-binding model, which is in excellent agreement with the analytical;results. The waveguides resemble graphene nanoribbons, but without the;particular properties of ribbons that emerge due to the details of the;edge. We show that electrons can be guided through kinks without;additional resistance and that transport through the waveguides is;robust against structural disorder. DOI: 10.1103/PhysRevB.86.245410;Goor Pedersen, Jesper/C-3965-2008; Gunst, Tue/C-6575-2013; Markussen, Troels/B-7800-2012;Goor Pedersen, Jesper/0000-0002-8411-240X; Gunst,;Tue/0000-0002-3000-5940; Markussen, Troels/0000-0003-1192-4025;9;0;0;0;9;1098-0121;WOS:000312292100005;;;J;Ramos, J. G. G. S.;Barbosa, A. L. R.;Bazeia, D.;Hussein, M. S.;Lewenkopf, C. H.;Generalized correlation functions for conductance fluctuations and the;mesoscopic spin Hall effect;PHYSICAL REVIEW B;86;23;235112;10.1103/PhysRevB.86.235112;DEC 11 2012;2012;We study the spin Hall conductance fluctuations in ballistic mesoscopic;systems. We obtain universal expressions for the spin and charge current;fluctuations, cast in terms of current-current autocorrelation;functions. We show that the latter are conveniently parametrized as;deformed Lorentzian shape lines, functions of an external applied;magnetic field and the Fermi energy. We find that the charge current;fluctuations show quite unique statistical features at the;symplectic-unitary crossover regime. Our findings are based on an;evaluation of the generalized transmission coefficients correlation;functions within the stub model and are amenable to experimental test.;DOI: 10.1103/PhysRevB.86.235112;1, INCT/G-5846-2013; Informacao quantica, Inct/H-9493-2013; Lewenkopf, Caio/A-1791-2014;Lewenkopf, Caio/0000-0002-2053-2798;1;0;0;0;1;1098-0121;WOS:000312291700001;;;J;Ruth, Marcel;Meier, Cedrik;Scaling coefficient for three-dimensional grain coalescence of ZnO on;Si(111);PHYSICAL REVIEW B;86;22;224108;10.1103/PhysRevB.86.224108;DEC 11 2012;2012;Grain-rotation-induced coalescence is a well-known growth mechanism of;granular/polycrystalline systems in two dimensions. In three-dimensional;(3D) crystals there are more degrees of freedom, and influences of the;substrate play an important role. In the present work we analyze the 3D;coalescence of ZnO grains on Si(111) by thermal annealing under O-2;atmosphere. Atomic force microscopy and electron backscatter diffraction;measurements reveal a significant increase in the mean grain diameter;and a reorientation that matches the substrate orientation. This;structural reorganization leads to a substantial enhancement of the;electronic layer quality. We describe the grain growth with a diffusive;model and find a volume scaling coefficient of 1.5. This proves that the;additional degrees of freedom significantly accelerate grain-rotation;induced coalescence in three dimensions. DOI: 10.1103/PhysRevB.86.224108;Meier, Cedrik/E-4877-2011;Meier, Cedrik/0000-0002-3787-3572;4;0;0;0;4;1098-0121;WOS:000312291300001;;;J;van den Berg, T. L.;Lombardo, P.;Kuzian, R. O.;Hayn, R.;Orbital polaron in double-exchange ferromagnets;PHYSICAL REVIEW B;86;23;235114;10.1103/PhysRevB.86.235114;DEC 11 2012;2012;We investigate the spectral properties of the two-orbital Hubbard model,;including the pair hopping term, by means of the dynamical mean field;method. This Hamiltonian describes materials in which ferromagnetism is;realized by the double-exchange mechanism, as for instance manganites,;nickelates, or diluted magnetic semiconductors. The spectral function of;the unoccupied states is characterized by a specific equidistant three;peak structure. We emphasize the importance of the double hopping term;on the spectral properties. We show the existence of a ferromagnetic;phase due to electron doping near n = 1 by the double-exchange;mechanism. A quasiparticle excitation at the Fermi energy is found that;we attribute to what we will call an orbital polaron. We derive an;effective spin-pseudospin Hamiltonian for the two-orbital;double-exchange model at n = 1 filling to explain the existence and;dynamics of this quasiparticle. DOI: 10.1103/PhysRevB.86.235114;Kuzian, Roman/C-9079-2012; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;Kuzian, Roman/0000-0002-6672-7224;;1;0;0;0;1;1098-0121;WOS:000312291700003;;;J;van Wezel, Jasper;Comment on "Charge-parity symmetry observed through Friedel oscillations;in chiral charge-density waves";PHYSICAL REVIEW B;86;24;247101;10.1103/PhysRevB.86.247101;DEC 11 2012;2012;In their publication [Phys. Rev. B 84, 245125 (2011)], Ishioka et al.;discuss the recently discovered chiral charge-density wave state in;1T-TiSe2 in terms of a parameter H-CDW, whose sign is suggested to;correspond to the handedness of the chiral order. Here, we point out;that H-CDW, as defined by Ishioka et al., cannot be used to characterize;chirality in that way. An alternative measure of chirality for the;specific case of 1T-TiSe2 is suggested. DOI: 10.1103/PhysRevB.86.247101;2;0;0;0;2;1098-0121;WOS:000312292100006;;;J;Wan, Li;Iacovella, Christopher R.;Nguyen, Trung D.;Docherty, Hugh;Cummings, Peter T.;Confined fluid and the fluid-solid transition: Evidence from absolute;free energy calculations;PHYSICAL REVIEW B;86;21;214105;10.1103/PhysRevB.86.214105;DEC 11 2012;2012;The debate on whether an organic fluid nanoconfined by mica sheets will;undergo a fluid-to-solid transition as the fluid film thickness is;reduced below a critical value has lasted over two decades. Extensive;experimental and simulation investigations have thus far left this;question only partially addressed. In this work, we adapt and apply;absolute free energy calculations to analyze the phase behavior of a;simple model for nanoconfined fluids, consisting of spherical;Lennard-Jones (LJ) molecules confined between LJ solid walls, which we;use in combination with grand-canonical molecular dynamics simulations.;Absolute Helmholtz free energy calculations of the simulated;nanoconfined systems directly support the existence of order-disorder;phase transition as a function of decreasing wall separation, providing;results in close agreement with previous experiments and detailed;atomistic simulations. DOI: 10.1103/PhysRevB.86.214105;Iacovella, Christopher/D-2050-2011; Cummings, Peter/B-8762-2013;Cummings, Peter/0000-0002-9766-2216;5;0;0;0;5;1098-0121;WOS:000312290000001;;;J;Zaletel, Michael P.;Mong, Roger S. K.;Exact matrix product states for quantum Hall wave functions;PHYSICAL REVIEW B;86;24;245305;10.1103/PhysRevB.86.245305;DEC 11 2012;2012;We show that the model wave functions used to describe the fractional;quantum Hall effect have exact representations as matrix product states;(MPS). These MPS can be implemented numerically in the orbital basis of;both finite and infinite cylinders, which provides an efficient way of;calculating arbitrary observables. We extend this approach to the;charged excitations and numerically compute their Berry phases. Finally,;we present an algorithm for numerically computing the real-space;entanglement spectrum starting from an arbitrary orbital basis MPS,;which allows us to study the scaling properties of the real-space;entanglement spectra on infinite cylinders. The real-space entanglement;spectrum obeys a scaling form dictated by the edge conformal field;theory, allowing us to accurately extract the two entanglement;velocities of the Moore-Read state. In contrast, the orbital space;spectrum is observed to scale according to a complex set of power laws;that rule out a similar collapse. DOI: 10.1103/PhysRevB.86.245305;16;0;0;0;16;1098-0121;WOS:000312292100002;;;J;Berdiyorov, G. R.;Chao, X. H.;Peeters, F. M.;Wang, H. B.;Moshchalkov, V. V.;Zhu, B. Y.;Magnetoresistance oscillations in superconducting strips: A;Ginzburg-Landau study;PHYSICAL REVIEW B;86;22;224504;10.1103/PhysRevB.86.224504;DEC 10 2012;2012;Within the time-dependent Ginzburg-Landau theory we study the dynamic;properties of current-carrying superconducting strips in the presence of;a perpendicular magnetic field. We found pronounced voltage peaks as a;function of the magnetic field, the amplitude of which depends both on;sample dimensions and external parameters. These voltage oscillations;are a consequence of moving vortices, which undergo alternating static;and dynamic phases. At higher fields or for high currents, the;continuous motion of vortices is responsible for the monotonic;background on which the resistance oscillations due to the entry of;additional vortices are superimposed. Mechanisms for such;vortex-assisted resistance oscillations are discussed. Qualitative;changes in the magnetoresistance curves are observed in the presence of;random defects, which affect the dynamics of vortices in the system.;Zhu, Bei Yi/C-1506-2011; Moshchalkov, Victor/I-7232-2013; Wang, HB/M-7461-2013;2;0;0;0;2;1098-0121;WOS:000312064300004;;;J;Bogan, A.;Hatke, A. T.;Studenikin, S. A.;Sachrajda, A.;Zudov, M. A.;Pfeiffer, L. N.;West, K. W.;Microwave-induced resistance oscillations in tilted magnetic fields;PHYSICAL REVIEW B;86;23;235305;10.1103/PhysRevB.86.235305;DEC 10 2012;2012;We have studied the effect of an in-plane magnetic field on;microwave-induced resistance oscillations in a high mobility;two-dimensional electron system. We have found that the oscillation;amplitude decays exponentially with an in-plane component of the;magnetic field B-parallel to. While these findings cannot be accounted;for by existing theories, our analysis suggests that the decay can be;explained by a B-parallel to-induced correction to the quantum;scattering rate, which is quadratic in B-parallel to.;Zudov, Michael/A-3013-2008;7;1;0;0;7;1098-0121;WOS:000312064700005;;;J;Dahl, J.;Kuzmin, M.;Adell, J.;Balasubramanian, T.;Laukkanen, P.;Formation of polar InN with surface Fermi level near the valence band;maximum by means of ammonia nitridation;PHYSICAL REVIEW B;86;24;245304;10.1103/PhysRevB.86.245304;DEC 10 2012;2012;Development of InN films for devices is hindered due to metallic In;clusters, formed readily during growth, and unintentional n-type;conductivity of the nominally undoped films, including surface;electron-accumulation layers via the Fermi level pinning into the;conduction band. Plasma nitridation eliminates even large In clusters;from the surface by changing them to two-dimensional InN [Yamaguchi and;Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar;approach, that is, nitridation of In-covered surfaces with ammonia (NH3);to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001);substrates. By means of scanning tunneling microscopy and spectroscopy,;as well as photoelectron spectroscopy, we show that this simple NH3;nitridation provides the hitherto not reported formation of polar;InN(000-1) films with the surface Fermi level close to the valence band;maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84,;205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304;1;0;0;0;1;1098-0121;WOS:000312065400006;;;J;Ghosh, Sankha;English, Niall J.;Ab initio study on optoelectronic properties of interstitially versus;substitutionally doped titania;PHYSICAL REVIEW B;86;23;235203;10.1103/PhysRevB.86.235203;DEC 10 2012;2012;Density functional theory calculations were performed for Cr, N, and C;monodoping in both rutile and anatase phases of crystalline titania. The;formation and binding energies, electronic structure, and optical;properties were determined. It was found that although C has a;predominant preference for occupying a lattice O-site, N has higher;preference for interstitial occupancy in the vicinity of an O atom in;anatase, whereas both prefer to maintain interstitial occupancy in;rutile, albeit with both N and C exhibiting a relatively higher;preference for anatase over rutile. Furthermore, Cr is more;energetically stable in the rutile phase relative to anatase for;substitutional doping, albeit with comparable formation energies for;both interstitial and substitutional doping. Interstitial C-impurities;were observed to occupy the oxygen lattice sites in anatase, but not in;rutile. In terms of N-doping, it was found that interstitial doping;exhibits higher visible light photoactivity than substitutional doping.;1;0;0;0;1;1098-0121;WOS:000312064700003;;;J;Howie, Ross T.;Scheler, Thomas;Guillaume, Christophe L.;Gregoryanz, Eugene;Proton tunneling in phase IV of hydrogen and deuterium;PHYSICAL REVIEW B;86;21;214104;10.1103/PhysRevB.86.214104;DEC 10 2012;2012;Using in situ optical spectroscopy we have investigated the temperature;stability of the mixed atomic and molecular phases IV of dense deuterium;and hydrogen. Through a series of low-temperature experiments at high;pressures, we observe phase III-to-IV transformation, imposing;constraints on the P-T phase diagrams. The spectral features of the;phase IV-III transition and differences in appearances of the isotopes;Raman spectra strongly indicate the presence of proton tunneling in;phase IV. No differences between isotopes were observed in absorption;spectroscopic studies, resulting in identical values for the band gap.;The extrapolation of the combined band gap yields 375 GPa as the minimum;transition pressure to the metallic state of hydrogen (deuterium). The;minute changes in optical spectra above 275 GPa might suggest the;presence of a new solid modification of hydrogen (deuterium), closely;related structurally to phase IV. DOI: 10.1103/PhysRevB. 86.214104;15;1;0;0;15;1098-0121;WOS:000312063700001;;;J;Hrahsheh, Fawaz;Hoyos, Jose A.;Vojta, Thomas;Rounding of a first-order quantum phase transition to a strong-coupling;critical point;PHYSICAL REVIEW B;86;21;214204;10.1103/PhysRevB.86.214204;DEC 10 2012;2012;We investigate the effects of quenched disorder on first-order quantum;phase transitions on the example of the N-color quantum Ashkin-Teller;model. By means of a strong-disorder renormalization group, we;demonstrate that quenched disorder rounds the first-order quantum phase;transition to a continuous one for both weak and strong coupling between;the colors. In the strong-coupling case, we find a distinct type of;infinite-randomness critical point characterized by additional internal;degrees of freedom. We investigate its critical properties in detail and;find stronger thermodynamic singularities than in the random transverse;field Ising chain. We also discuss the implications for higher spatial;dimensions as well as unusual aspects of our renormalization-group;scheme. DOI: 10.1103/PhysRevB.86.214204;Hoyos, Jose/F-2742-2012;2;0;0;0;2;1098-0121;WOS:000312063700002;;;J;Huevonen, D.;Zhao, S.;Ehlers, G.;Mansson, M.;Gvasaliya, S. N.;Zheludev, A.;Excitations in a quantum spin liquid with random bonds;PHYSICAL REVIEW B;86;21;214408;10.1103/PhysRevB.86.214408;DEC 10 2012;2012;We present the results of an inelastic neutron-scattering study on two;bond disordered quasi-two-dimensional quantum magnets;(C4H12N2)Cu-2(Cl1-xBrx)(6) with x = 0.035 and 0.075. We observe an;increase of spin gap, a reduction of magnon bandwidth, and a decrease of;magnon lifetimes compared to the x = 0 sample. Additional magnon damping;is observed at higher energies away from the zone center, which is found;to follow the density of single-particle states. DOI:;10.1103/PhysRevB.86.214408;Instrument, CNCS/B-4599-2012; Ehlers, Georg/B-5412-2008; Huvonen, Dan/A-6664-2008; Mansson, Martin/C-1134-2014;8;0;0;0;8;1098-0121;WOS:000312063700005;;;J;Hwang, Kyusung;Park, Kwon;Kim, Yong Baek;Influence of Dzyaloshinskii-Moriya interactions on magnetic structure of;a spin-1/2 deformed kagome lattice antiferromagnet;PHYSICAL REVIEW B;86;21;214407;10.1103/PhysRevB.86.214407;DEC 10 2012;2012;Motivated by the recent neutron-scattering experiment on Rb2Cu3SnF12;[Nature Phys. 6, 865 (2010)], we investigate the effect of;Dzyaloshinskii-Moriya interactions in a theoretical model for the;magnetic structure of this material. Considering the valence bond solid;ground state, which has a 12-site unit cell, we develop the bond;operator mean-field theory. It is shown that the Dzyaloshinskii-Moriya;interactions significantly modify the triplon dispersions around the;Gamma point and cause a shift of the spin-gap (the minimum triplon gap);position from the K to Gamma point in the first Brillouin zone. The spin;gap is also evaluated in exact diagonalization studies on a 24-site;cluster. We discuss a magnetic transition induced by the;Dzyaloshinskii-Moriya interactions in the bond operator framework.;Moreover, the magnetization process under external magnetic fields is;studied within the exact diagonalization approach. We find that the;results of both approaches are consistent with the experimental;findings. DOI: 10.1103/PhysRevB.86.214407;3;0;0;0;3;1098-0121;WOS:000312063700004;;;J;Ignacio, M.;Pierre-Louis, O.;Impalement dynamics and Brownian motion of solid islands on nanopillars;PHYSICAL REVIEW B;86;23;235410;10.1103/PhysRevB.86.235410;DEC 10 2012;2012;We study the dynamics of solid islands deposited on nanopillars using;kinetic Monte Carlo simulations. The islands are initially placed on the;top of the pillars, in the so-called Cassie-Baxter state. For high;pillars, the dynamics is divided into two phases. The first phase;corresponds to the deterministic and irreversible impalement of the;island. The dynamics of this phase is governed by surface diffusion.;Once the island has collapsed, a second phase is observed where the;island exhibits Brownian motion along the pillars, characterized by a;diffusion constant D-i and a kinetic coefficient K-i accounting for the;interaction of the island with the top of the pillars. The random walk;stops when the island reaches the bottom of the substrate, where it;sticks irreversibly. When the island wettability is small, the island;diffusion constant D-i is controlled by adatom diffusion, and scales as;the inverse of the number of atoms in the island. In contrast, for large;wettabilities, we observe that D-i oscillates as the island size is;increased. The minimum of the oscillations corresponds to;nucleation-limited dynamics, where D-i is independent of the island;size. We also determine the time for partial irreversible collapse on;shorter pillars, leading to the so-called Wenzel state. Finally, we;discuss the orders of magnitude of the typical duration of these;processes.;2;0;0;0;2;1098-0121;WOS:000312064700007;;;J;Jarlborg, T.;Barbiellini, B.;Markiewicz, R. S.;Bansil, A.;Different doping from apical and planar oxygen vacancies in;Ba2CuO4-delta and La2CuO4-delta: First-principles band structure;calculations;PHYSICAL REVIEW B;86;23;235111;10.1103/PhysRevB.86.235111;DEC 10 2012;2012;First-principles band structure calculations for large supercells of;Ba2CuO4-delta and La2CuO4-delta with different distributions and;concentrations of oxygen vacancies show that the effective doping on;copper sites strongly depends on where the vacancy is located. A vacancy;within the Cu layer produces a weak doping effect while a vacancy;located at an apical oxygen site acts as a stronger electron dopant on;the copper layers and gradually brings the electronic structure close to;that of La2-xSrxCuO4. These effects are robust and only depend;marginally on lattice distortions. Our results show that deoxygenation;can reduce the effect of traditional La/Sr or La/Nd substitutions. Our;study clearly identifies location of the dopant in the crystal structure;as an important factor in doping of the cuprate planes.;6;0;0;0;6;1098-0121;WOS:000312064700002;;;J;Kunimori, K.;Nakamura, M.;Nohara, H.;Tanida, H.;Sera, M.;Nishioka, T.;Matsumura, M.;Unusual magnetic order in CeT2Al10 (T = Ru, Os) in comparison with;localized NdFe2Al10;PHYSICAL REVIEW B;86;24;245106;10.1103/PhysRevB.86.245106;DEC 10 2012;2012;We have investigated the magnetic properties in the well localized;compound NdFe2Al10 and the Kondo semiconductor CeT2Al10 (T = Ru, Os) to;clarify the origin of the unusual magnetic order in CeT2Al10. In;NdFe2Al10, the experimental results of the magnetic properties could be;reproduced very well by the mean-field calculation for the;two-sublattice model. In CeT2Al10 we could reproduce the anisotropic;magnetic susceptibility in the paramagnetic region above 60-100 K very;well by the mean-field calculation for the two-sublattice model;introducing an anisotropic exchange interaction and the recently;determined crystalline electric field (CEF) level scheme from Strigari;et al. [Phys. Rev. B 86, 081105 (2012)]. However, in the;antiferromagnetic (AFM) ordered state, we could not reproduce the;experimental results at all in the framework of the mean-field;calculation for the two-sublattice model. We propose that although the;magnetic properties in the paramagnetic region above 60-100 K could be;understood well by a localized picture, the ordered state could not, and;that the c-f hybridization, especially along the a axis, is associated;with the unusual magnetic order in CeT2Al10. DOI:;10.1103/PhysRevB.86.245106;Tanida, Hiroshi/E-1878-2013;14;0;0;0;14;1098-0121;WOS:000312065400003;;;J;Lee, Jin Bae;Hong, Won G.;Kim, Hae Jin;Jaglicic, Z.;Jazbec, S.;Wencka, M.;Jelen, A.;Dolinsek, J.;Canted antiferromagnetism on a nanodimensional spherical surface;geometry: The case of MnCO3 small hollow nanospheres;PHYSICAL REVIEW B;86;22;224407;10.1103/PhysRevB.86.224407;DEC 10 2012;2012;Canted antiferromagnetism on a nanodimensional spherical surface;geometry was investigated on manganese carbonate MnCO3 small hollow;nanospheres of mean diameter 7.0 +/- 0.3 nm and shell thickness of 0.7;nm, by performing magnetic measurements and specific heat study, in;comparison to the bulk form of the same material. Contrary to the;expectation that small magnetic nanoparticles become superparamagnetic,;the phase transition to the canted antiferromagnetic (AFM) state in the;MnCO3 hollow nanospheres is preserved and retains, at a qualitative;level, all the features of the canted AFM state of the bulk material. At;a quantitative level, some significant differences between the hollow;nanospheres and the bulk were observed, which can all be explained by;the weakened interspin interactions in the hollow nanospheres due to;reduced atomic coordination by the neighboring atoms. This makes the;canted AFM structure of the hollow nanospheres more soft and fragile;with respect to external forces like the magnetic field, as compared to;the rigid and robust structure of the bulk material.;1;0;0;0;1;1098-0121;WOS:000312064300002;;;J;Levkivskyi, Ivan P.;Froehlich, Juerg;Sukhorukov, Eugene V.;Theory of fractional quantum Hall interferometers;PHYSICAL REVIEW B;86;24;245105;10.1103/PhysRevB.86.245105;DEC 10 2012;2012;Interference of fractionally charged quasiparticles is expected to lead;to Aharonov-Bohm oscillations with periods larger than the flux quantum.;However, according to the Byers-Yang theorem, observables of an;electronic system are invariant under an adiabatic insertion of a;quantum of singular flux. We resolve this seeming paradox by considering;a microscopic model of electronic interferometers made from a quantum;Hall liquid at filling factor 1/m with the shape of a Corbino disk. In;such interferometers, the quantum Hall edge states are utilized in place;of optical beams, the quantum point contacts play the role of beam;splitters connecting different edge channels, and Ohmic contacts;represent a source and drain of quasiparticle currents. Depending on the;position of Ohmic contacts, one distinguishes interferometers of;Fabry-Perot (FP) and Mach-Zehnder (MZ) type. An approximate ground state;of such interferometers is described by a Laughlin-type wave function,;and low-energy excitations are incompressible deformations of this;state. We construct a low-energy effective theory by restricting the;microscopic Hamiltonian of electrons to the space of incompressible;deformations and show that the theory of the quantum Hall edge so;obtained is a generalization of a chiral conformal field theory. In our;theory, a quasiparticle tunneling operator is found to be a;single-valued function of tunneling point coordinates, and its phase;depends on the topology determined by the positions of Ohmic contacts.;We describe strong coupling of the edge states to Ohmic contacts and the;resulting quasiparticle current through the interferometer with the help;of a master equation. We find that the coherent contribution to the;average quasiparticle current through MZ interferometers does not vanish;after summation over quasiparticle degrees of freedom. However, it;acquires oscillations with the electronic period, in agreement with the;Byers-Yang theorem. Importantly, our theory does not rely on any ad hoc;constructions, such as Klein factors, etc. When the magnetic flux;through an FP interferometer is varied with a modulation gate, current;oscillations have the quasiparticle periodicity, thus allowing for;spectroscopy of quantum Hall edge states. DOI:;10.1103/PhysRevB.86.245105;2;0;0;0;2;1098-0121;WOS:000312065400002;;;J;Li, Chun-Mei;Luo, Hu-Bin;Hu, Qing-Miao;Yang, Rui;Johansson, Borje;Vitos, Levente;Role of magnetic and atomic ordering in the martensitic transformation;of Ni-Mn-In from a first-principles study;PHYSICAL REVIEW B;86;21;214205;10.1103/PhysRevB.86.214205;DEC 10 2012;2012;The composition-dependent lattice parameters, crystal structure, elastic;properties, magnetic moment, and electronic structure of Ni2Mn1+xIn1-x;(0 <= x <= 0.6) are studied by using first-principles calculations. It;is shown that the martensitic phase transition (MPT) from cubic L2(1) to;tetragonal L1(0) accompanies theMn(Mn)-Mn-In ferromagnetic (FM) to;antiferromagnetic (AFM) transition, at around the critical composition x;= 0.32, in agreement with the experimental measurement. The Mn-In atomic;disorder leads to decreasing stability of the martensite relative to the;austenite, which depresses the MPT. The shear elastic constant C' of the;parent phase first decreases slightly with increasing x and then remains;almost unchanged above x = 0.32, indicating C' alone cannot account for;the increase of the MPT temperature with x. The total magnetic moments;for the L2(1) phase are in good agreement with those determined by;experiments, whereas for the L1(0) phase they are slightly larger than;the experimental data due to the possibleMn-In atomic disorder in the;sample. The calculated density of states demonstrate that the covalent;bonding between the minority spin states of Ni and In plays an important;role in both the magnetic and structural stability. DOI:;10.1103/PhysRevB.86.214205;Hu, Qing-Miao/D-3345-2014;5;0;0;0;5;1098-0121;WOS:000312063700003;;;J;Liu, Bin;Seko, Atsuto;Tanaka, Isao;Cluster expansion with controlled accuracy for the MgO/ZnO pseudobinary;system via first-principles calculations;PHYSICAL REVIEW B;86;24;245202;10.1103/PhysRevB.86.245202;DEC 10 2012;2012;Using the cluster analysis of the structure population (CASP) method,;error of cluster expansion (CE) can be controlled. Combining the CASP-CE;with a systematic set of first-principles total energies, a model;wide-gap pseudobinary system with simple crystal structures MgO-ZnO is;revisited. Ground-state structures are exhaustively searched for both;rocksalt and wurtzite structures. A few structures as yet unreported are;found. The vibrational contribution to the Gibbs free-energy is;evaluated by first-principles phonon calculations within the;quasiharmonic approximation. Monte Carlo simulations are then made to;compute grand potentials of two structures using the thermodynamic;integration. DOI: 10.1103/PhysRevB.86.245202;Tanaka, Isao/B-5941-2009; Liu, Bin/N-9955-2014;1;1;0;0;1;1098-0121;WOS:000312065400005;;;J;Liu, Pan;Santana, Juan A. Colon;Dai, Qilin;Wang, Xianjie;Dowben, Peter A.;Tang, Jinke;Sign of the superexchange coupling between next-nearest neighbors in EuO;PHYSICAL REVIEW B;86;22;224408;10.1103/PhysRevB.86.224408;DEC 10 2012;2012;The sign of the superexchange coupling J(2) between next-nearest;neighboring Eu2+ magnetic moments in EuO is a matter subject to debate.;We have obtained evidence that this coupling is of antiferromagnetic;nature (J(2) < 0). EuO thin films grown at different temperatures;suggest that lattice expansion results in enhancement of T-C as clearly;observed in stoichiometric EuO films grown on CaF2 substrates. Resonant;photoemission spectroscopy provides compelling evidence of strong;hybridization between O 2p and Eu 5d6s6p weighted bands, suggesting that;strong superexchange may be mediated by oxygen, thus consistent with the;observed antiferromagnetic behavior between the next-nearest neighboring;Eu atoms via nearest neighbor oxygen in EuO.;Dai, Qilin/K-1437-2013;2;0;0;0;2;1098-0121;WOS:000312064300003;;;J;Luisier, Mathieu;Atomistic modeling of anharmonic phonon-phonon scattering in nanowires;PHYSICAL REVIEW B;86;24;245407;10.1103/PhysRevB.86.245407;DEC 10 2012;2012;Phonon transport is simulated in ultrascaled nanowires in the presence;of anharmonic phonon-phonon scattering. A modified valence-force-field;model containing four types of bond deformation is employed to describe;the phonon band structure. The inclusion of five additional bond;deformation potentials allows us to account for anharmonic effects.;Phonon-phonon interactions are introduced through inelastic scattering;self-energies solved in the self-consistent Born approximation in the;nonequilibrium Green's function formalism. After calibrating the model;with experimental data, the thermal current, resistance, and;conductivity of < 100 >-, < 110 >-, and < 111 >-oriented Si nanowires;with different lengths and temperatures are investigated in the presence;of anharmonic phonon-phonon scattering and compared to their ballistic;limit. It is found that all the simulated thermal currents exhibit a;peak at temperatures around 200 K if phonon scattering is turned on;while they monotonically increase when this effect is neglected.;Finally, phonon transport through Si-Ge-Si nanowires is considered. DOI:;10.1103/PhysRevB.86.245407;12;1;0;0;12;1098-0121;WOS:000312065400007;;;J;Nemirovskii, Sergey K.;Fluctuations of the vortex line density in turbulent flows of quantum;fluids;PHYSICAL REVIEW B;86;22;224505;10.1103/PhysRevB.86.224505;DEC 10 2012;2012;We present an analytical study of fluctuations of the vortex line;density (VLD) in turbulent flows of;quantum fluids. Two cases are considered. The first is the;counterflowing (Vinen) turbulence, where the vortex lines are;disordered, and the evolution of quantity L(t) obeys the Vinen equation.;The second case is the fluctuations of the VLD in a single vortex;bundle, which develops inside the domain of the concentrated;normal-fluid vorticity. The dynamics of the vortex bundle is described;by the Hall-Vinen-Bekarevich-Khalatnikov (HVBK) equations. The latter;case is of special interest, because the set of the quantum vortex;bundles is believed to mimic classical hydrodynamic turbulence. In;steady states the VLD is related to the normal velocity as L = (rho;gamma/rho(s))(2)upsilon(2)(n) for the Vinen case. In the vortex bundle;case, which appears inside the domain of a concentrated vorticity of;normal fluid, the stationary quantity L can be found from the matching;of velocities and is described by L = vertical bar del x v(n)vertical;bar/kappa. In nonstationary situations, and particularly in the;fluctuating turbulent flow, there is a retardation between the;instantaneous value of the normal velocity and the quantity L. This;retardation tends to decrease in accordance with the inner dynamics,;which has a relaxation character. In both cases, the relaxation dynamics;of the VLD is related to fluctuations of the relative velocity. However,;for the Vinen case the rate of temporal change for L(t) is directly;dependent upon delta v(ns), whereas for HVBK dynamics it depends on del;x delta v(ns). Therefore, for the disordered case the spectrum coincides with the spectrum omega(-5/3). In the;case of the bundle arrangement, the spectrum of the VLD varies (at;different temperatures) from omega(1/3) to omega(-5/3) dependencies.;This conclusion may serve as a basis for the experimental determination;of what kind of turbulence is implemented in different types of;generation.;0;0;0;0;0;1098-0121;WOS:000312064300005;;;J;Peelaers, H.;Van de Walle, C. G.;Effects of strain on band structure and effective masses in MoS2;PHYSICAL REVIEW B;86;24;241401;10.1103/PhysRevB.86.241401;DEC 10 2012;2012;We use hybrid density functional theory to explore the band structure;and effective masses of MoS2, and the effects of strain on the;electronic properties. Strain allows engineering the magnitude as well;as the nature (direct versus indirect) of the band gap. Deformation;potentials that quantify these changes are reported. The calculations;also allow us to investigate the transition in band structure from bulk;to monolayer, and the nature and degeneracy of conduction-band valleys.;Investigations of strain effects on effective masses reveal that small;uniaxial stresses can lead to large changes in the hole effective mass.;DOI: 10.1103/PhysRevB.86.241401;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;56;3;0;0;56;1098-0121;WOS:000312065400001;;;J;Phien, Ho N.;Vidal, Guifre;McCulloch, Ian P.;Infinite boundary conditions for matrix product state calculations;PHYSICAL REVIEW B;86;24;245107;10.1103/PhysRevB.86.245107;DEC 10 2012;2012;We propose a formalism to study dynamical properties of a quantum;many-body system in the thermodynamic limit by studying a finite system;with "infinite boundary conditions" where both finite-size effects and;boundary effects have been eliminated. For one-dimensional systems,;infinite boundary conditions are obtained by attaching two boundary;sites to a finite system, where each of these two sites effectively;represents a semi-infinite extension of the system. One can then use;standard finite-size matrix product state techniques to study a region;of the system while avoiding many of the complications normally;associated with finite-size calculations such as boundary Friedel;oscillations. We illustrate the technique with an example of time;evolution of a local perturbation applied to an infinite;(translationally invariant) ground state, and use this to calculate the;spectral function of the S = 1 Heisenberg spin chain. This approach is;more efficient and more accurate than conventional simulations based on;finite-size matrix product state and density-matrix;renormalization-group approaches. DOI: 10.1103/PhysRevB.86.245107;McCulloch, Ian/A-6037-2011;McCulloch, Ian/0000-0002-8983-6327;6;0;0;0;6;1098-0121;WOS:000312065400004;;;J;Polyakov, O. P.;Corbetta, M.;Stepanyuk, O. V.;Oka, H.;Saletsky, A. M.;Sander, D.;Stepanyuk, V. S.;Kirschner, J.;Spin-dependent Smoluchowski effect;PHYSICAL REVIEW B;86;23;235409;10.1103/PhysRevB.86.235409;DEC 10 2012;2012;Electron charge near atomically sharp corrugations at the surfaces of a;solid tends to spill out and smoothen the abrupt variation of the;positions of the positively charged atomic nuclei. The reason is that;electrons are much less localized than nuclei. This has been discussed;already some 70 years ago by Smoluchowski [R. Smoluchowski, Phys. Rev.;60, 661 (1941)], and the corresponding effect of charge redistribution;near surface corrugations bears his name. The Smoluchowski effect;focuses on the total electron charge density. It neglects that;electrons-in addition to charge-also carry a spin. We discuss;spin-dependent electron spill out and demonstrate in a combined;theoretical and experimental work that compelling consequences for;spin-polarization and spin-dependent transport arise at the edges of;magnetic nanostructures due to the spin-dependent Smoluchowski effect.;We find a variation of the tunnel magnetoresistance ratio of more than;20% on a length scale of a few atomic diameters.;3;0;0;0;3;1098-0121;WOS:000312064700006;;;J;Rajeswaran, B.;Khomskii, D. I.;Zvezdin, A. K.;Rao, C. N. R.;Sundaresan, A.;Field-induced polar order at the Neel temperature of chromium in;rare-earth orthochromites: Interplay of rare-earth and Cr magnetism;PHYSICAL REVIEW B;86;21;214409;10.1103/PhysRevB.86.214409;DEC 10 2012;2012;We report field-induced switchable polarization (P similar to 0.2-0.8 mu;C/cm(2)) below the Neel temperature of chromium (T-N(Cr)) in weakly;ferromagnetic rare-earth orthochromites, RCrO3 (R = rare earth) but only;when the rare-earth ion is magnetic. Intriguingly, the polarization in;ErCrO3 (T-C = 133 K) disappears at a spin-reorientation (Morin);transition (T-SR similar to 22 K) below which the weak ferromagnetism;associated with the Cr sublattice also disappears, demonstrating the;crucial role of weak ferromagnetism in inducing the polar order.;Further, the polarization (P) is strongly influenced by an applied;magnetic field, indicating a strong magnetoelectric effect. We suggest;that the polar order occurs in RCrO3, due to the combined effect of the;poling field that breaks the symmetry and the exchange field on the R;ion from the Cr sublattice that stabilizes the polar state. We propose;that a similar mechanism could work in the isostructural rare-earth;orthoferrites RFeO3 as well. DOI: 10.1103/PhysRevB.86.214409;Athinarayanan, Sundaresan/B-2176-2010; Zvezdin, Anatoly/K-2072-2013;24;1;0;0;24;1098-0121;WOS:000312063700006;;;J;Rhim, Jun-Won;Park, Kwon;Self-similar occurrence of massless Dirac particles in graphene under a;magnetic field;PHYSICAL REVIEW B;86;23;235411;10.1103/PhysRevB.86.235411;DEC 10 2012;2012;Intricate interplay between the periodicity of the lattice structure and;that of the cyclotron motion gives rise to a well-known self-similar;fractal structure of the energy eigenvalue, known as the Hofstadter;butterfly, for an electron moving in lattice under magnetic field.;Connected with the n = 0 Landau level, the central band of the;Hofstadter butterfly is especially interesting in the honeycomb lattice.;While the entire Hofstadter butterfly can be in principle obtained by;solving Harper's equations numerically, the weak-field limit, most;relevant for experiment, is intractable owing to the fact that the size;of the Hamiltonian matrix, which needs to be diagonalized, diverges. In;this paper, we develop an effective Hamiltonian method that can be used;to provide an accurate analytic description of the central Hofstadter;band in the weak-field regime. One of the most important discoveries;obtained in this work is that massless Dirac particles always exist;inside the central Hofstadter band no matter how small the magnetic flux;may become. In other words, with its bandwidth broadened by the lattice;effect, the n = 0 Landau level contains massless Dirac particles within;itself. In fact, by carefully analyzing the self-similar recursive;pattern of the central Hofstadter band, we conclude that massless Dirac;particles should occur under arbitrary magnetic field. As a corollary,;the central Hofstadter band also contains a self-similar structure of;recursive Landau levels associated with such massless Dirac particles.;To assess the experimental feasibility of observing massless Dirac;particles inside the central Hofstadter band, we compute the width of;the central Hofstadter band as a function of magnetic field in the;weak-field regime.;5;0;0;0;5;1098-0121;WOS:000312064700008;;;J;Robinson, Zachary R.;Tyagi, Parul;Mowll, Tyler R.;Ventrice, Carl A., Jr.;Hannon, James B.;Argon-assisted growth of epitaxial graphene on Cu(111);PHYSICAL REVIEW B;86;23;235413;10.1103/PhysRevB.86.235413;DEC 10 2012;2012;The growth of graphene by catalytic decomposition of ethylene on Cu(111);in an ultrahigh vacuum system was investigated with low-energy electron;diffraction, low-energy electron microscopy, and atomic force;microscopy. Attempts to form a graphene overlayer using ethylene at;pressures as high as 10 mTorr and substrate temperatures as high as 900;degrees C resulted in almost no graphene growth. By using an argon;overpressure, the growth of epitaxial graphene on Cu(111) was achieved.;The suppression of graphene growth without the use of an argon;overpressure is attributed to Cu sublimation at elevated temperatures.;During the initial stages of growth, a random distribution of rounded;graphene islands is observed. The predominant rotational orientation of;the islands is within +/- 1 degrees of the Cu(111) substrate lattice.;Robinson, Zachary/B-5128-2013;11;1;0;0;11;1098-0121;WOS:000312064700010;;;J;Sheps, Tatyana;Brocious, Jordan;Corso, Brad L.;Guel, O. Tolga;Whitmore, Desire;Durkaya, Goeksel;Potma, Eric O.;Collins, Philip G.;Four-wave mixing microscopy with electronic contrast of individual;carbon nanotubes;PHYSICAL REVIEW B;86;23;235412;10.1103/PhysRevB.86.235412;DEC 10 2012;2012;We review an extensive study of the factors that influence the intensity;of coherent, nonlinear four-wave mixing (FWM) in carbon nanotubes, with;particular attention to the variability inherent to single-walled carbon;nanotubes (SWNTs). Through a combination of spatial imaging and;spectroscopy applied to hundreds of individual SWNTs in optoelectronic;devices, the FWM response is shown to vary systematically with;free-carrier concentration. This dependence is manifested both in the;intrinsic SWNT band structure and also by extrinsic and environmental;effects. We demonstrate the sensitivity of the SWNT FWM signal by;investigating SWNTs transferred from one substrate to another, before;and after the introduction of chemical damage, and with chemical and;electrostatic doping. The results demonstrate FWM as a sensitive;technique for interrogating SWNT optoelectronic properties.;3;0;0;0;3;1098-0121;WOS:000312064700009;;;J;Tian, Zhiting;Esfarjani, Keivan;Chen, Gang;Enhancing phonon transmission across a Si/Ge interface by atomic;roughness: First-principles study with the Green's function method;PHYSICAL REVIEW B;86;23;235304;10.1103/PhysRevB.86.235304;DEC 10 2012;2012;Knowledge on phonon transmittance as a function of phonon frequency and;incidence angle at interfaces is vital for multiscale modeling of heat;transport in nanostructured materials. Although thermal conductivity;reduction in nanostructured materials can usually be described by phonon;scattering due to interface roughness, we show how a Green's function;method in conjunction with the Landauer formalism suggests that;interface roughness induced by atomic mixing can increase phonon;transmission and interfacial thermal conductance. This is an attempt to;incorporate first-principles force constants derived from ab initio;density-functional theory (DFT) into Green's function calculation for;infinitely large three-dimensional crystal structure. We also;demonstrate the importance of accurate force constants by comparing the;phonon transmission and thermal conductance using force constants;obtained from semiempirical Stillinger-Weber potential and;first-principles DFT calculations.;Chen, Gang/J-1325-2014;Chen, Gang/0000-0002-3968-8530;14;0;0;0;14;1098-0121;WOS:000312064700004;;;J;Uhm, Sang Hoon;Yeom, Han Woong;Electron-phonon interaction of one-dimensional and two-dimensional;surface states in indium adlayers on the Si(111) surface;PHYSICAL REVIEW B;86;24;245408;10.1103/PhysRevB.86.245408;DEC 10 2012;2012;We performed angle-resolved photoelectron spectroscopy measurements on;one-and two-dimensional (1D and 2D) metallic surface states in indium;layers on the Si(111) surface as a function of temperature. The;temperature dependence of surface-state energy widths was used to;estimate the electron-phonon coupling constant lambda. The 2D metallic;surface states of the root 7 x root 3-In layer above one monolayer;exhibit lambda = 0.8 similar to 1.0, similar to the value of bulk indium;0.9. This is discussed in the light of a recent structure model with a;double indium layer and the relatively high superconducting transition;temperature of this surface. On the other hand, the lambda's of two 1D;surface states of the 4 x 1-In surface with one monolayer of indium are;much higher than that of root 7 x root 3-In, reaching 1.8, which is the;largest ever reported for a surface state. The origin of the enhanced;electron-phonon coupling and its relationship to the charge-density-wave;phase transition of this surface are discussed. DOI:;10.1103/PhysRevB.86.245408;1;0;0;0;1;1098-0121;WOS:000312065400008;;;J;Vekilova, O. Yu.;Simak, S. I.;Ponomareva, A. V.;Abrikosov, I. A.;Influence of Ni on the lattice stability of Fe-Ni alloys at multimegabar;pressures;PHYSICAL REVIEW B;86;22;224107;10.1103/PhysRevB.86.224107;DEC 10 2012;2012;The lattice stability trends of the primary candidate for Earth's core;material, the Fe-Ni alloy, were examined from first principles. We;employed the exact muffin-tin orbital method (EMTO) combined with the;coherent potential approximation (CPA) for the treatment of alloying;effects. It was revealed that high pressure reverses the trend in the;relative stabilities of the body-centered cubic (bcc), face-centered;cubic (fcc), and hexagonal close-packed (hcp) phases observed at ambient;conditions. In the low pressure region the increase of Ni concentration;in the Fe-Ni alloy enhances the bcc phase destabilization relative to;the more close-packed fcc and hcp phases. However, at 300 GPa (Earth's;core pressure), the effect of Ni addition is opposite. The reverse of;the trend is associated with the suppression of the ferromagnetism of Fe;when going from ambient pressures to pressure conditions corresponding;to those of Earth's core. The first-principles results are explained in;the framework of the canonical band model.;0;0;0;0;0;1098-0121;WOS:000312064300001;;;J;Wang, Kang;Light wave states in quasiperiodic metallic structures;PHYSICAL REVIEW B;86;23;235110;10.1103/PhysRevB.86.235110;DEC 10 2012;2012;We investigate the light wave states in the octagonal and decagonal;quasiperiodic metallic structures by considering their respective;approximants at different orders. The mechanisms underlying the light;wave behaviors are studied in relation to various structure parameters;and configurations. We show that the formation of the first passbands,;that delimit the photonic band gaps and determine the plasma gaps,;involves only the lowest frequency resonance modes inside the fat tiles,;and that light localization occurs due to resonances in high symmetry;local centers as well as in the fragments of such centers, formed by the;skinny tiles. The structure filling rate affects the localized state;frequencies relative to the first passbands, as well as the plasma;frequency levels, by modulating the frequency levels of the resonance;modes and the widths of the passbands. The results of this study can be;generalized to other metallic quasiperiodic and related structures.;1;0;0;0;1;1098-0121;WOS:000312064700001;;;J;Singh, Shashi B.;Yang, L. T.;Wang, Y. F.;Shao, Y. C.;Chiang, C. W.;Chiou, J. W.;Lin, K. T.;Chen, S. C.;Wang, B. Y.;Chuang, C. H.;Ling, D. C.;Pong, W. F.;Tsai, M. H.;Tsai, H. M.;Pao, C. W.;Shiu, H. W.;Chen, C. H.;Lin, H.-J.;Lee, J. F.;Yamane, H.;Kosugi, N.;Correlation between p-type conductivity and electronic structure of;Cr-deficient CuCr1-xO2 (x = 0-0.1);PHYSICAL REVIEW B;86;24;241103;10.1103/PhysRevB.86.241103;DEC 7 2012;2012;The correlation between the p-type hole conduction and the electronic;structures of Cr-deficient CuCr1-xO2 (x = 0-0.1) compounds was;investigated using O K-, Cu, and Cr L-3,L-2-edge x-ray absorption;near-edge structure (XANES), scanning photoelectron microscopy, and;x-ray emission spectroscopy measurements. XANES spectra reveal a gradual;increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr;deficiency x, whereas, the valence of Cr remains constant as Cr3+. These;results indicate that the p-type conductivity in the CuCr1-xO2 samples;is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct;Cu1+-O-Cu2+ holemechanism. Remarkable Cr-deficiency-induced changes in;the densities of Cu 3d, Cu 3d-O 2p, andO2p states at or near the;valence-band maximum or the Fermi level were also observed. In addition,;a crossover of conductionmechanism from thermally activated (TA) hopping;to a combination of TA and Mott's three-dimensional variable range;hopping occurs around 250 K.;Yamane, Hiroyuki/K-5297-2013;0;0;0;0;0;1098-0121;WOS:000312025700004;;;J;Bossy, Jacques;Ollivier, Jacques;Schober, Helmut;Glyde, H. R.;Excitations of amorphous solid helium;PHYSICAL REVIEW B;86;22;224503;10.1103/PhysRevB.86.224503;DEC 7 2012;2012;We present neutron scattering measurements of the dynamic structure;factor S(Q,omega) of amorphous solid helium confined in 47-angstrom pore;diameter MCM-41 at pressure 48.6 bars. At low temperature T = 0.05 K, we;observe S(Q,omega) of the confined quantum amorphous solid plus the bulk;polycrystalline solid between the MCM-41 powder grains. No liquidlike;phonon-roton modes, other sharply defined modes at low energy (omega <;1.0 meV), or modes unique to a quantum amorphous solid that might;suggest superflow are observed. Rather, the S(Q, omega) of confined;amorphous and bulk polycrystalline solid appear to be very similar. At;higher temperature (T > 1 K), the amorphous solid in the MCM-41 pores;melts to a liquid which has a broad S(Q,omega) peaked near omega similar;or equal to 0, characteristic of normal liquid He-4 under pressure.;Expressions for the S(Q,omega) of amorphous and polycrystalline solid;helium are presented and compared. In previous measurements of liquid;He-4 confined in MCM-41 at lower pressure, the intensity in the liquid;roton mode decreases with increasing pressure until the roton vanishes;at the solidification pressure (38 bars), consistent with no roton in;the solid observed here.;2;0;0;0;2;1098-0121;WOS:000321857700002;;;J;Joly, Yves;Collins, S. P.;Grenier, Stephane;Tolentino, Helio C. N.;De Santis, Maurizio;Birefringence and polarization rotation in resonant x-ray diffraction;PHYSICAL REVIEW B;86;22;220101;10.1103/PhysRevB.86.220101;DEC 7 2012;2012;Birefringence can contribute to x-ray resonant Bragg diffraction and;likely explains recent novel data collected on CuO. We prove these;statements using ab initio simulations which reproduce the experimental;polarization effects quantitatively. We show that an unrotated;polarization signal-ruled out in resonant magnetic scattering within the;electric dipole approximation-arises from the dynamic change in;polarization inside the material. We are able to reproduce all the;related behavior with circular polarization and its dependence on the;angle of rotation about the Bragg wave vector. We provide a tool to;disentangle the various physical origins of the polarization rotation,;providing a more complete understanding of the illuminated material.;TOLENTINO, HELIO/J-1894-2014; Grenier, Stephane/N-1986-2014;TOLENTINO, HELIO/0000-0003-4032-5988; Grenier,;Stephane/0000-0001-8370-7375;12;1;0;0;12;1098-0121;WOS:000321857700001;;;J;Kovacs, Istvan A.;Igloi, Ferenc;Cardy, John;Corner contribution to percolation cluster numbers;PHYSICAL REVIEW B;86;21;214203;10.1103/PhysRevB.86.214203;DEC 7 2012;2012;We study the number of clusters in two-dimensional (2d) critical;percolation, N-Gamma, which intersect a given subset of bonds, Gamma. In;the simplest case, when Gamma is a simple closed curve, N-Gamma is;related to the entanglement entropy of the critical diluted quantum;Ising model, in which Gamma represents the boundary between the;subsystem and the environment. Due to corners in Gamma there are;universal logarithmic corrections to N-Gamma, which are calculated in;the continuum limit through conformal in-variance, making use of the;Cardy-Peschel formula. The exact formulas are confirmed by large scale;Monte Carlo simulations. These results are extended to anisotropic;percolation where they confirm a result of discrete holomorphicity.;Kovacs, Istvan/A-8447-2013;5;0;0;0;5;1098-0121;WOS:000312023100003;;;J;Komsa, Hannu-Pekka;Krasheninnikov, Arkady V.;Effects of confinement and environment on the electronic structure and;exciton binding energy of MoS2 from first principles;PHYSICAL REVIEW B;86;24;241201;10.1103/PhysRevB.86.241201;DEC 7 2012;2012;Using GW first-principles calculations for few-layer and bulk MoS2, we;study the effects of quantum confinement on the electronic structure of;this layered material. By solving the Bethe-Salpeter equation, we also;evaluate the exciton energy in these systems. Our results are in;excellent agreement with the available experimental data. Exciton;binding energy is found to dramatically increase from 0.1 eV in the bulk;to 1.1 eV in the monolayer. The fundamental band gap increases as well,;so that the optical transition energies remain nearly constant. We also;demonstrate that environments with different dielectric constants have a;profound effect on the electronic structure of the monolayer. Our;results can be used for engineering the electronic properties of MoS2;and other transition-metal dichalcogenides and may explain the;experimentally observed variations in the mobility of monolayer MoS2.;Krasheninnikov, Arkady/M-3020-2013;Krasheninnikov, Arkady/0000-0003-0074-7588;50;4;0;0;50;1098-0121;WOS:000312025700003;;;J;Ciuchi, S.;Fratini, S.;Electronic transport and quantum localization effects in organic;semiconductors;PHYSICAL REVIEW B;86;24;245201;10.1103/PhysRevB.86.245201;DEC 7 2012;2012;We explore the charge transport mechanism in organic semiconductors;based on a model that accounts for the thermal intermolecular disorder;at work in pure crystalline compounds, as well as extrinsic sources of;disorder that are present in current experimental devices. Starting from;the Kubo formula, we describe a theoretical framework that relates the;time-dependent quantum dynamics of electrons to the frequency-dependent;conductivity. The electron mobility is then calculated through a;relaxation time approximation that accounts for quantum localization;corrections beyond Boltzmann theory, and allows us to efficiently;address the interplay between highly conducting states in the band range;and localized states induced by disorder in the band tails. The;emergence of a "transient localization" phenomenon is shown to be a;general feature of organic semiconductors that is compatible with the;bandlike temperature dependence of the mobility observed in pure;compounds. Carrier trapping by extrinsic disorder causes a crossover to;a thermally activated behavior at low temperature, which is;progressively suppressed upon increasing the carrier concentration, as;is commonly observed in organic field-effect transistors. Our results;establish a direct connection between the localization of the electronic;states and their conductive properties, formalizing phenomenological;considerations that are commonly used in the literature.;Fratini, Simone/A-4692-2009;Fratini, Simone/0000-0002-4750-3241;4;0;0;0;4;1098-0121;WOS:000312025700001;;;J;Huang, Bing;Lee, Hoonkyung;Defect and impurity properties of hexagonal boron nitride: A;first-principles calculation;PHYSICAL REVIEW B;86;24;245406;10.1103/PhysRevB.86.245406;DEC 7 2012;2012;In this paper, we have systematically studied the structural and;electronic properties of vacancy defects and carbon impurity in;hexagonal boron nitride (h-BN) by using both normal GGA calculations and;advanced hybrid functional calculations. Our calculations show that the;defect configurations and the local bond lengths around defects are;sensitive to their charge states. The highest negative defect charge;states are largely determined by the nearly-free-electron state at the;conduction band minimum of BN. Generally, the in-gap defect levels;obtained from hybrid functional calculations are much deeper than those;obtained from normal GGA calculations. The formation energies of neutral;defects calculated by hybrid functional and GGA are close to each other,;but the defect transition energy levels are quite different between GGA;and hybrid functional calculations. Finally, we show that the charged;defect configurations as well as the transition energy levels exhibit;interesting layer effects.;Huang, Bing/D-8941-2011;Huang, Bing/0000-0001-6735-4637;8;0;0;0;8;1098-0121;WOS:000312025700002;;;J;Maassen, T.;Vera-Marun, I. J.;Guimaraes, M. H. D.;van Wees, B. J.;Contact-induced spin relaxation in Hanle spin precession measurements;PHYSICAL REVIEW B;86;23;235408;10.1103/PhysRevB.86.235408;DEC 7 2012;2012;In the field of spintronics the "conductivity mismatch" problem remains;an important issue. Here the difference between the resistance of;ferromagnetic electrodes and a (high resistive) transport channel causes;injected spins to be backscattered into the leads and to lose their spin;information. We study the effect of the resulting contact-induced spin;relaxation on spin transport, in particular on nonlocal Hanle precession;measurements. As the Hanle line shape is modified by the contact-induced;effects, the fits to Hanle curves can result in incorrectly determined;spin transport properties of the transport channel. We quantify this;effect that mimics a decrease of the spin relaxation time of the channel;reaching more than four orders of magnitude and a minor increase of the;diffusion coefficient by less than a factor of two. Then we compare the;results to spin transport measurements on graphene from the literature.;We further point out guidelines for a Hanle precession fitting procedure;that allows the reliable extraction of spin transport properties from;measurements.;Vera-Marun, Ivan/A-4704-2013; Guimaraes, Marcos/K-1940-2013;Vera-Marun, Ivan/0000-0002-6347-580X;;14;1;0;0;14;1098-0121;WOS:000312024900002;;;J;Murch, K. W.;Ginossar, E.;Weber, S. J.;Vijay, R.;Girvin, S. M.;Siddiqi, I.;Quantum state sensitivity of an autoresonant superconducting circuit;PHYSICAL REVIEW B;86;22;220503;10.1103/PhysRevB.86.220503;DEC 7 2012;2012;When a frequency chirped excitation is applied to a classical high-Q;nonlinear oscillator, its motion becomes dynamically synchronized to the;drive and large oscillation amplitude is observed, provided the drive;strength exceeds the critical threshold for autoresonance. We;demonstrate that when such an oscillator is strongly coupled to a;quantized superconducting qubit, both the effective nonlinearity and the;threshold become a nontrivial function of the qubit-oscillator detuning.;Moreover, the autoresonant threshold is dependent on the quantum state;of the qubit and may be used to realize a high-fidelity, latching;readout whose speed is not limited by the oscillator Q.;1;0;0;0;1;1098-0121;WOS:000312024300001;;;J;Ondrejkovic, P.;Kempa, M.;Vysochanskii, Y.;Saint-Gregoire, P.;Bourges, P.;Rushchanskii, K. Z.;Hlinka, J.;Neutron scattering study of ferroelectric Sn2P2S6 under pressure;PHYSICAL REVIEW B;86;22;224106;10.1103/PhysRevB.86.224106;DEC 7 2012;2012;Ferroelectric phase transition in the semiconductor Sn2P2S6 single;crystal has been studied by means of neutron scattering in the;pressure-temperature range adjacent to the anticipated tricritical;Lifshitz point (p approximate to 0.18 GPa, T approximate to 296 K). The;observations reveal a direct ferroelectric-paraelectric phase transition;in the whole investigated pressure range (0.18-0.6 GPa). These results;are in a clear disagreement with phase diagrams assumed in numerous;earlier works, according to which a hypothetical intermediate;incommensurate phase extends over several or even tens of degrees in the;0.5 GPa pressure range. Temperature dependence of the anisotropic;quasielastic diffuse scattering suggests that polarization fluctuations;present above T-C are strongly reduced in the ordered phase. Still, the;temperature dependence of the ((2) over bar 00) Bragg reflection;intensity at p = 0.18 GPa can be remarkably well modeled assuming the;order-parameter amplitude growth according to the power law with;logarithmic corrections predicted for a uniaxial ferroelectric;transition at the tricritical Lifshitz point.;Hlinka, Jiri/G-5985-2014; Ondrejkovic, Petr/G-6654-2014; Kempa, Martin/G-8830-2014;1;0;0;0;1;1098-0121;WOS:000312024300002;;;J;Svindrych, Z.;Janu, Z.;Kozlowski, A.;Honig, J. M.;Low-temperature magnetic anomaly in magnetite;PHYSICAL REVIEW B;86;21;214406;10.1103/PhysRevB.86.214406;DEC 7 2012;2012;We have studied experimentally the responses of high-quality single;crystals of stoichiometric synthetic magnetite to applied weak dc and ac;magnetic fields in the range of 6-60 K, far below the Verwey transition.;The results can be compared to so-called magnetic after effects (MAE);measurements, which are the most extensive magnetic measurements of;magnetite at these temperatures. We present a novel point of view on the;relaxation phenomena encountered at these temperatures-the;low-temperature anomaly, addressing the striking difference between the;results of conventional ac susceptibility measurements and those;accompanying MAE measurements, i.e., periodic excitations with strong;magnetic pulses. We also draw a connection between this anomaly and the;so-called glasslike transition, and discuss possible mechanisms;responsible for these effects.;janu, zdenek/G-9113-2014;0;0;0;0;0;1098-0121;WOS:000312023100001;;;J;Tarantini, C.;Lee, S.;Kametani, F.;Jiang, J.;Weiss, J. D.;Jaroszynski, J.;Folkman, C. M.;Hellstrom, E. E.;Eom, C. B.;Larbalestier, D. C.;Artificial and self-assembled vortex-pinning centers in superconducting;Ba(Fe1-xCox)(2)As-2 thin films as a route to obtaining very high;critical-current densities;PHYSICAL REVIEW B;86;21;214504;10.1103/PhysRevB.86.214504;DEC 7 2012;2012;We report on the superior vortex pinning of single-and multilayer;Ba(Fe1-xCox)(2)As-2 thin films with self-assembled c-axis and;artificially introduced ab-plane pins. Ba(Fe1-xCox)(2)As-2 can accept a;very high density of pins (15-20 vol %) without T-c suppression. The;matching field is greater than 12 T, producing a significant enhancement;of the critical current density J(c), an almost isotropic J(c) (theta,;20 T) > 10(5) A/cm(2), and global pinning force density F-p of similar;to 50 GN/m(3). This scenario strongly differs from the high-temperature;superconducting cuprates where the addition of pins without Tc;suppression is limited to 2-4 vol %, leading to small H-Irr enhancements;and improved J(c) only below 3-5 T.;Lee, Sanghan/C-8876-2012; Eom, Chang-Beom/I-5567-2014;7;2;0;0;7;1098-0121;WOS:000312023100002;;;J;Xia, Junchao;Carter, Emily A.;Density-decomposed orbital-free density functional theory for covalently;bonded molecules and materials;PHYSICAL REVIEW B;86;23;235109;10.1103/PhysRevB.86.235109;DEC 7 2012;2012;We propose a density decomposition scheme using a Wang-Govind-Carter-;(WGC-) based kinetic energy density functional (KEDF) to accurately and;efficiently simulate various covalently bonded molecules and materials;within orbital-free (OF) density functional theory (DFT). By using a;local, density-dependent scale function, the total density is decomposed;into a highly localized density within covalent bond regions and a;flattened delocalized density, with the former described by semilocal;KEDFs and the latter treated by the WGC KEDF. The new model predicts;reasonable equilibrium volumes, bulk moduli, and phase-ordering energies;for various semiconductors compared to Kohn-Sham (KS) DFT benchmarks.;The decomposition formalism greatly improves numerical stability and;accuracy, while retaining computational speed compared to simply;applying the original WGC KEDF to covalent materials. The surface energy;of Si(100) and various diatomic molecule properties can be stably;calculated and also agree well with KSDFT benchmarks. This;linear-scaled, computationally efficient, density-partitioned,;multi-KEDF scheme opens the door to large-scale simulations of;molecules, semiconductors, and insulators with OFDFT.;7;0;0;0;7;1098-0121;WOS:000312024900001;;;J;Zhao, Yang;Gong, Shou-Shu;Wang, Yong-Jun;Su, Gang;Low-energy effective theory and two distinct critical phases in a;spin-1/2 frustrated three-leg spin tube;PHYSICAL REVIEW B;86;22;224406;10.1103/PhysRevB.86.224406;DEC 7 2012;2012;Motivated by the crystal structures of [(CuCl(2)tachH)(3)Cl]Cl-2 and;Ca3Co2O6, we develop a low-energy effective theory using the;bosonization technique for a spin-1/2 frustrated three-leg spin tube;with trigonal prism units in two limit cases. The features obtained with;the effective theory are numerically elucidated by the density matrix;renormalization group method. Three different quantum phases in the;ground state of the system, say, one gapped dimerized phase and two;distinct gapless phases, are identified, where the two gapless phases;are found to have the conformal central charge c = 1 and 3/2,;respectively. Spin gaps, spin and dimer correlation functions, and the;entanglement entropy are obtained. In particular, it is disclosed that;the critical phase with c = 3/2 is the consequence of spin frustrations,;which might belong to the SU(2)(k=2) Wess-Zumino-Witten-Novikov;universality class, and is induced by the twist term in the bosonized;Hamiltonian density.;Su, Gang/G-6092-2011;Su, Gang/0000-0002-8149-4342;1;1;0;0;1;1098-0121;WOS:000312024300003;;;J;Vucicevic, J.;Goerbig, M. O.;Milovanovic, M. V.;d-wave superconductivity on the honeycomb bilayer;PHYSICAL REVIEW B;86;21;214505;10.1103/PhysRevB.86.214505;DEC 7 2012;2012;We introduce a microscopic model on the honeycomb bilayer, which in the;small-momentum limit captures the usual (quadratic dispersion in the;kinetic term) description of bilayer graphene. In the limit of strong;interlayer hopping it reduces to an effective honeycomb monolayer model;with also third-neighbor hopping. We study interaction effects in this;effective model, focusing on possible superconducting instabilities. We;find d(x2-y2) superconductivity in the strong-coupling limit of an;effective tJ -model-like description that gradually transforms into d +;id time-reversal symmetry-breaking superconductivity at weak couplings.;In this limit the small-momentum order-parameter expansion is (k(x) +;ik(y) )(2) [or (k(x) + ik(y) )(2)] in both valleys of the effective;low-energy description. The relevance of our model and investigation for;the physics of bilayer graphene is also discussed.;5;0;0;0;5;1098-0121;WOS:000312023100004;;;J;Etzioni, Yoav;Horovitz, Baruch;Le Doussal, Pierre;Rings and Coulomb boxes in dissipative environments;PHYSICAL REVIEW B;86;23;235406;10.1103/PhysRevB.86.235406;DEC 6 2012;2012;We study a particle on a ring in the presence of a dissipative;Caldeira-Leggett environment and derive its response to a dc field. We;show how this non-equilibrium response is related to a flux averaged;equilibrium response. We find, through a two-loop renormalization group;analysis, that a large dissipation parameter eta flows to a fixed point;eta(R) = (h) over bar/(2 pi). We also reexamine the mapping of this;problem to that of the Coulomb box and show that the relaxation;resistance, of recent interest, is quantized for large eta. For finite;eta > eta(R) we find that a certain average of the relaxation resistance;is quantized. We propose a Coulomb-box experiment to measure a quantized;noise. DOI: 10.1103/PhysRevB.86.235406;1;0;0;0;1;1098-0121;WOS:000312024600004;;;J;Fontana, Yannik;Grzela, Grzegorz;Bakkers, Erik P. A. M.;Rivas, Jaime Gomez;Mapping the directional emission of quasi-two-dimensional photonic;crystals of semiconductor nanowires using Fourier microscopy;PHYSICAL REVIEW B;86;24;245303;10.1103/PhysRevB.86.245303;DEC 6 2012;2012;Controlling the dispersion and directionality of the emission of;nanosources is one of the major goals of nanophotonics research. This;control will allow the development of highly efficient nanosources even;at the single-photon level. One of the ways to achieve this goal is to;couple the emission to Bloch modes of periodic structures. Here, we;present the first measurements of the directional emission from nanowire;photonic crystals by using Fourier microscopy. With this technique, we;efficiently collect and resolve the directional emission of nanowires;within the numerical aperture of a microscope objective. The light;emission from a heterostructure grown in each nanowire is governed by;the photonic (Bloch) modes of the photonic crystal. We also demonstrate;that the directionality of the emission can be easily controlled by;infiltrating the photonic crystal with a high refractive index liquid.;This work opens new possibilities for the control of the emission of;sources in nanowires.;5;0;0;0;5;1098-0121;WOS:000312025300005;;;J;Fujimori, Shin-ichi;Ohkochi, Takuo;Okane, Tetsuo;Saitoh, Yuji;Fujimori, Atsushi;Yamagami, Hiroshi;Haga, Yoshinori;Yamamoto, Etsuji;Onuki, Yoshichika;Itinerant nature of U 5f states in uranium mononitride revealed by;angle-resolved photoelectron spectroscopy;PHYSICAL REVIEW B;86;23;235108;10.1103/PhysRevB.86.235108;DEC 6 2012;2012;The electronic structure of the antiferromagnet uranium nitride (UN) has;been studied by angle-resolved photoelectron spectroscopy (ARPES) using;soft x-rays (h nu = 420-520 eV). Strongly dispersive bands with large;contributions from the U 5f states were observed in ARPES spectra and;form Fermi surfaces. The band structure as well as the Fermi surfaces in;the paramagnetic phase are well explained by the band-structure;calculation treating all the U 5f electrons as being itinerant,;suggesting that an itinerant description of the U 5f states is;appropriate for this compound. On the other hand, changes in the;spectral function due to the antiferromagnetic transition were very;small. The shapes of the Fermi surfaces in a paramagnetic phase are;highly three-dimensional, and the nesting of Fermi surfaces is unlikely;as the origin of the magnetic ordering. DOI: 10.1103/PhysRevB.86.235108;2;0;0;0;2;1098-0121;WOS:000312024600002;;;J;Hosseini, Mir Vahid;Zareyan, Malek;Unconventional superconducting states of interlayer pairing in bilayer;and trilayer graphene;PHYSICAL REVIEW B;86;21;214503;10.1103/PhysRevB.86.214503;DEC 6 2012;2012;We develop a theory for interlayer pairing of chiral electrons in;graphene materials which results in an unconventional superconducting;state with an s-wave spin-triplet order parameter. In a pure bilayer;graphene, this superconductivity exhibits a gapless property with an;exotic effect of temperature-induced condensation causing an increase of;the pairing amplitude with increasing temperature. We find that a finite;doping opens a gap in the excitation spectrum and weakens this anomalous;temperature dependence. We further explore the possibility of realizing;a variety of pairing patterns with different topologies of the Fermi;surface, by tuning the difference in the doping of the two layers. In;trilayer graphene, the interlayer superconductivity is characterized by;a two-component order parameter which can be used to define two distinct;phases in which only one of the components is nonvanishing. For ABA;stacking the stable state is determined by a competition between these;two phases. On variation of the relative amplitude of the corresponding;coupling strength, a first-order phase transition can occur between;these two phases. For ABC stacking, we find that the two phases coexist;with the possibility of a similar phase transition, which turns out to;be second order. DOI: 10.1103/PhysRevB.86.214503;1;0;0;0;1;1098-0121;WOS:000312022700003;;;J;Kajihara, Y.;Inui, M.;Matsuda, K.;Nagao, T.;Ohara, K.;Density fluctuations at the continuous liquid-liquid phase transition in;chalcogen systems;PHYSICAL REVIEW B;86;21;214202;10.1103/PhysRevB.86.214202;DEC 6 2012;2012;We have carried out density and small-angle x-ray scattering;measurements on a typical liquid chalcogen (Te, Se) system to;investigate its continuous liquid-liquid phase transition. With;increasing temperature, the zero-wave-number structure factor S(0) shows;a maximum in the middle of the transition region where the density;exhibits negative thermal expansion. This is direct evidence of density;fluctuations induced by the liquid-liquid phase transition. When the;sample is pressurized to 100 MPa, the density and S(0) curves shift to;the lower temperature side, which is consistent with the shift of the;structural transition. We discuss the similarity between liquid Te and;liquid water from the viewpoint of fluctuations induced by the;liquid-liquid transition. DOI: 10.1103/PhysRevB.86.214202;1;0;0;0;1;1098-0121;WOS:000312022700001;;;J;Khuntia, P.;Strydom, A. M.;Wu, L. S.;Aronson, M. C.;Steglich, F.;Baenitz, M.;Field-tuned critical fluctuations in YFe2Al10: Evidence from;magnetization, Al-27 NMR, and NQR investigations;PHYSICAL REVIEW B;86;22;220401;10.1103/PhysRevB.86.220401;DEC 6 2012;2012;We report magnetization, specific heat, and NMR investigations on;YFe2Al10 over a wide range of temperature and magnetic field and zero;field (NQR) measurements. Magnetic susceptibility, specific heat, and;spin-lattice relaxation rate divided by T (1/T1T) follow a weak power;law (similar to T-0.4) temperature dependence, which is a signature of;the critical fluctuations of Fe moments. The value of the;Sommerfeld-Wilson ratio and the linear relation between 1/T1T and.;suggest the existence of ferromagnetic correlations in this system. No;magnetic ordering down to 50 mK in C-p(T)/T and the unusual T and H;scaling of the bulk and NMR data are associated with a magnetic;instability which drives the system to quantum criticality. The magnetic;properties of the system are tuned by field wherein ferromagnetic;fluctuations are suppressed and a crossover from quantum critical to;Fermi-liquid behavior is observed with increasing magnetic field.;Khuntia, Panchanan /E-4270-2010;5;1;0;0;5;1098-0121;WOS:000312023600001;;;J;Marsh, J.;Camley, R. E.;Two-wave mixing in nonlinear magnetization dynamics: A perturbation;expansion of the Landau-Lifshitz-Gilbert equation;PHYSICAL REVIEW B;86;22;224405;10.1103/PhysRevB.86.224405;DEC 6 2012;2012;Recent experiments have shown that two electromagnetic waves can be;mixed together by a nonlinear process in magnetic materials and can;produce a wide variety of output waves, each with a different frequency.;A perturbation expansion of the Landau-Lifschitz-Gilbert equation is;presented which provides qualitative and quantitative understanding of;this process. The results of this expansion are compared to both;experiment and direct numerical solutions.;1;0;0;0;1;1098-0121;WOS:000312023600004;;;J;Norris, Scott A.;Stress-induced patterns in ion-irradiated silicon: Model based on;anisotropic plastic flow;PHYSICAL REVIEW B;86;23;235405;10.1103/PhysRevB.86.235405;DEC 6 2012;2012;We present a model for the effect of stress on thin amorphous films that;develop atop ion-irradiated silicon, based on the mechanism of;ion-induced anisotropic plastic flow. Using only parameters directly;measured or known to high accuracy, the model exhibits remarkably good;agreement with the wavelengths of experimentally observed patterns and;agrees qualitatively with limited data on ripple propagation speed. The;predictions of the model are discussed in the context of other;mechanisms recently theorized to explain the wavelengths, including;extensive comparison with an alternate model of stress. DOI:;10.1103/PhysRevB.86.235405;14;0;0;0;14;1098-0121;WOS:000312024600003;;;J;Ostlin, A.;Chioncel, L.;Vitos, L.;One-particle spectral function and analytic continuation for many-body;implementation in the exact muffin-tin orbitals method;PHYSICAL REVIEW B;86;23;235107;10.1103/PhysRevB.86.235107;DEC 6 2012;2012;We investigate one of the most common analytic continuation techniques;in condensed matter physics, namely the Pade approximant. Aspects;concerning its implementation in the exact muffin-tin orbitals (EMTO);method are scrutinized with special regard towards making it stable and;free of artificial defects. The electronic structure calculations are;performed for solid hydrogen, and the performance of the analytical;continuation is assessed by monitoring the density of states constructed;directly and via the Pade approximation. We discuss the difference;between the k-integrated and k-resolved analytical continuations, as;well as describing the use of random numbers and pole residues to;analyze the approximant. It is found that the analytic properties of the;approximant can be controlled by appropriate modifications, making it a;robust and reliable tool for electronic structure calculations. At the;end, we propose a route to perform analytical continuation for the;EMTO+dynamical mean field theory method. DOI: 10.1103/PhysRevB.86.235107;0;0;0;0;0;1098-0121;WOS:000312024600001;;;J;Rauch, D.;Suellow, S.;Bleckmann, M.;Klemke, B.;Kiefer, K.;Kim, M. S.;Aronson, M. C.;Bauer, E.;Magnetic phase diagram of CePt3B1-xSix;PHYSICAL REVIEW B;86;24;245104;10.1103/PhysRevB.86.245104;DEC 6 2012;2012;We present a study of the main bulk properties (susceptibility,;magnetization, resistivity, and specific heat) of CePt3B1-xSix, an;alloying system that crystallizes in a noncentrosymmetric lattice, and;derive the magnetic phase diagram. The materials at the end point of the;alloying series have previously been studied, with CePt3B established as;a material with two different magnetic phases at low temperatures;(antiferromagnetic below T-N = 7.8 K, weakly ferromagnetic below T-C;approximate to 5 K), while CePt3Si is a heavy fermion superconductor;(T-c = 0.75 K) coexisting with antiferromagnetism (T-N = 2.2 K). From;our experiments we conclude that the magnetic phase diagram is divided;into two regions. In the region of low Si content (up to x similar to;0.7) the material properties resemble those of CePt3B. Upon increasing;the Si concentration further the magnetic ground state continuously;transforms into that of CePt3Si. In essence, we argue that CePt3B can be;understood as a low pressure variant of CePt3Si.;Kiefer, Klaus/J-3544-2013; Klemke, Bastian/J-4746-2013;Kiefer, Klaus/0000-0002-5178-0495; Klemke, Bastian/0000-0003-4560-6025;0;0;0;0;0;1098-0121;WOS:000312025300004;;;J;Schoenecker, Stephan;Richter, Manuel;Koepernik, Klaus;Eschrig, Helmut;Ferromagnetic elements by epitaxial growth: A density functional;prediction (vol 85, 024407, 2012);PHYSICAL REVIEW B;86;21;219901;10.1103/PhysRevB.86.219901;DEC 6 2012;2012;0;0;0;0;0;1098-0121;WOS:000312022700004;;;J;Sedlmeier, Katrin;Elsaesser, Sebastian;Neubauer, David;Beyer, Rebecca;Wu, Dan;Ivek, Tomislav;Tomic, Silvia;Schlueter, John A.;Dressel, Martin;Absence of charge order in the dimerized kappa-phase BEDT-TTF salts;PHYSICAL REVIEW B;86;24;245103;10.1103/PhysRevB.86.245103;DEC 6 2012;2012;Utilizing infrared vibrational spectroscopy we have investigated;dimerized two-dimensional organic salts in order to search for possible;charge redistribution that might constitute electronic dipoles and;ferroelectricity: the quantum spin liquid kappa-(BEDT-TTF)(2)Cu-2(CN)(3);[BEDT-TTF: bis-(ethylenedithio)tetrathiafulvalene], the;antiferromagnetic Mott insulator kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Cl, and;the superconductor kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br. None of them;exhibit any indication of charge disproportionation. Upon cooling to low;temperatures all BEDT-TTF molecules remain homogeneously charged within;+/- 0.005e. No modification in the charge distribution is observed;around T = 6 K where a low-temperature anomaly has been reported for the;spin-liquid material kappa-(BEDT-TTF)(2)Cu-2(CN)(3). In this compound;the in-plane optical response and vibrational coupling are rather;anisotropic, indicating that the tilt of the BEDT-TTF molecules in c;direction and their coupling to the anion layers has to be considered in;the explanation of the electromagnetic properties.;Dressel, Martin/D-3244-2012; Ivek, Tomislav/D-5298-2011; Tomic, Silvia/D-5466-2011;14;0;0;0;14;1098-0121;WOS:000312025300003;;;J;Siloi, I.;Troiani, F.;Towards the chemical tuning of entanglement in molecular nanomagnets;PHYSICAL REVIEW B;86;22;224404;10.1103/PhysRevB.86.224404;DEC 6 2012;2012;Antiferromagnetic spin rings represent prototypical realizations of;highly correlated, low-dimensional systems. Here we theoretically show;how the introduction of magnetic defects by controlled chemical;substitutions results in a strong spatial modulation of spin-pair;entanglement within each ring. Entanglement between local degrees of;freedom (individual spins) and collective ones (total ring spins) are;shown to coexist in exchange-coupled ring dimers, as can be deduced from;general symmetry arguments. We verify the persistence of these features;at finite temperatures, and discuss them in terms of experimentally;accessible observables.;Troiani, Filippo/B-4787-2011;5;0;0;0;5;1098-0121;WOS:000312023600003;;;J;Sreenivasulu, G.;Petrov, V. M.;Fetisov, L. Y.;Fetisov, Y. K.;Srinivasan, G.;Magnetoelectric interactions in layered composites of piezoelectric;quartz and magnetostrictive alloys;PHYSICAL REVIEW B;86;21;214405;10.1103/PhysRevB.86.214405;DEC 6 2012;2012;Mechanical strain mediated magnetoelectric effects are studied in;bilayers and trilayers of piezoelectric quartz and magnetostrictive;permendur (P), an alloy of Fe-Co-V. It is shown that the magnetoelectric;voltage coefficient (MEVC), proportional to the ratio of the;piezoelectric coupling coefficient to the permittivity, is higher in;quartz-based composites than for traditional ferroelectrics-based ME;composites. In bilayers of X-cut single crystal quartz and permendur,;the MEVC varies from 1.5 V/cm Oe at 20 Hz to similar to 185 V/cm Oe at;bending resonance or electromechanical resonance corresponding to;longitudinal acoustic modes. In symmetric X-cut quartz-P trilayers, the;MEVC similar to 4.8 V/cm Oe at 20 Hz and similar to 175 V/cm Oe at;longitudinal acoustic resonance. Trilayers of Y-cut quartz and permendur;show ME coupling under a shear strain with an MEVC that is an order of;magnitude smaller than for longitudinal strain in samples with X-cut;quartz. A model for low-frequency and resonance ME effects which allows;for explicit expressions of MEVC and resonance frequencies is provided;and calculated. MEVCs are in general agreement with measured values.;Magnetoelectric composites with quartz have the desired characteristics;such as the absence of ferroelectric hysteresis and pyroelectric losses;and could potentially replace ferroelectrics in composite-based magnetic;sensors, transducers, and high-frequency devices. DOI:;10.1103/PhysRevB.86.214405;Gollapudi, Sreenivasulu/G-9832-2012;Gollapudi, Sreenivasulu/0000-0002-6136-7119;8;0;0;0;8;1098-0121;WOS:000312022700002;;;J;Syzranov, S. V.;Yevtushenko, O. M.;Efetov, K. B.;Fermionic and bosonic ac conductivities at strong disorder;PHYSICAL REVIEW B;86;24;241102;10.1103/PhysRevB.86.241102;DEC 6 2012;2012;We study the ac conduction in a system of fermions or bosons strongly;localized in a disordered array of sites with short-range interactions;at frequencies larger than the intersite tunneling but smaller than the;characteristic fluctuation of the on-site energy. While the main;contribution sigma(0)(omega) to the conductivity comes from local;dipole-type excitations on close pairs of sites, coherent processes on;three or more sites lead to an interference correction sigma(1)(omega),;which depends on the statistics of the charge carriers and can be;suppressed by a magnetic field. For bosons the correction is always;positive, while for fermions it can be positive or negative depending on;whether the conduction is dominated by effective single-particle or;single-hole processes. We calculate the conductivity explicitly assuming;a constant density of states of single-site excitations. Independently;of the statistics, sigma(0)(omega) = const. For bosons, sigma(1)(omega);proportional to log(C/omega). For fermions, sigma(1)(omega) proportional;to log[max(A,omega)/omega] - log[max(B,omega)/omega], where the first;and the second term are, respectively, the particle and hole;contributions, A and B being the particle and hole energy cutoffs. The;ac magnetoresistance has the same sign as sigma(1)(omega).;Efetov, Konstantin/H-8852-2013;0;0;0;0;0;1098-0121;WOS:000312025300001;;;J;Troeppner, C.;Schmitt, T.;Reuschl, M.;Hammer, L.;Schneider, M. A.;Mittendorfer, F.;Redinger, J.;Podloucky, R.;Weinert, M.;Incommensurate Moire overlayer with strong local binding: CoO(111);bilayer on Ir(100);PHYSICAL REVIEW B;86;23;235407;10.1103/PhysRevB.86.235407;DEC 6 2012;2012;Incommensurate relaxed overlayer Moire structures are often interpreted;as systems with weak lateral variations of the binding potential and;thus no structural modulations in the overlayer material. We discuss;here the example of a CoO(111) bilayer on Ir(100), which is a relaxed;overlayer with strong structural response to the lateral modulation of;interface properties but nevertheless is incommensurate. By means of;density functional theory (DFT) calculations, we quantitatively;reproduce all the structural parameters of the CoO(111) bilayer on;Ir(100) as proposed by a recent low-energy electron diffraction analysis;[Ebensperger et al., Phys. Rev. B 81, 235405 (2010)]. The calculations;predict energetic degeneracies with respect to registry shifts of the;CoO(111) film along [01 (1) over bar]. Large-scale, low-temperature;scanning tunneling microscopy topographies reveal that the true;structure of the film is incommensurate in this direction, exhibiting a;one-dimensional Moire pattern with a period of about 9.4 a(Ir). From DFT;calculations for limiting (periodic) models, we can sample the potential;landscape of the cobalt and oxygen atoms in the Moire structure across;the Ir(100) unit cell. We find that despite the non-commensurability of;the film, the binding to the substrate is site specific with strong;attraction and repulsion points for both cobalt and oxygen atoms,;leading to severe local distortions in the film. The lateral modulation;of the structural elements within the oxide film can be understood as a;combination of the lateral variation in the Co-Ir binding potential and;additional O-Ir binding. DOI: 10.1103/PhysRevB.86.235407;Schneider, M. Alexander/C-6241-2013; Hammer, Lutz/D-9863-2013; Schneider, M. Alexander/B-4444-2012; Mittendorfer, Florian/L-5929-2013;Schneider, M. Alexander/0000-0002-8607-3301;;3;0;0;0;3;1098-0121;WOS:000312024600005;;;J;Tyunina, M.;Dejneka, A.;Chvostova, D.;Levoska, J.;Plekh, M.;Jastrabik, L.;Phase transitions in ferroelectric Pb0.5Sr0.5TiO3 films probed by;spectroscopic ellipsometry;PHYSICAL REVIEW B;86;22;224105;10.1103/PhysRevB.86.224105;DEC 6 2012;2012;Phase transitions occurring in 130-nm-thick films of;perovskite-structure ferroelectric Pb0.5Sr0.5TiO3 are experimentally;studied by combining spectroscopic ellipsometry and low-frequency;dielectric analysis. Polycrystalline and polydomain epitaxial films with;relaxed misfit strain and columnar microstructure are investigated. The;paraelectric and the ferroelectric states, and the temperatures and;widths of the paraelectric-to-ferroelectric phase transitions, are;identified from the temperature evolution of refractive index measured;in transparency range. The temperatures at which transitions start on;cooling are found to be considerably higher than the temperatures of the;dielectric peaks. In contrast to the broad dielectric peaks, the;transition width of 60 K in the polycrystalline film and that of 20 K in;the polydomain epitaxial film are revealed. The discrepancies between;optical and dielectric data are explained by the influence of extrinsic;factors on the low-frequency response of the thin-film capacitors. It is;suggested that fundamental mechanisms of ferroelectric phase transitions;in thin films can be revealed by studies of thermo-optical properties.;Dejneka, Alexandr/G-6384-2014; Jastrabik, Lubomir /H-1217-2014; Chvostova, Dagmar/G-9360-2014;6;0;0;0;6;1098-0121;WOS:000312023600002;;;J;Zeng, Hualing;Zhu, Bairen;Liu, Kai;Fan, Jiahe;Cui, Xiaodong;Zhang, Q. M.;Low-frequency Raman modes and electronic excitations in atomically thin;MoS2 films;PHYSICAL REVIEW B;86;24;241301;10.1103/PhysRevB.86.241301;DEC 6 2012;2012;Atomically thin MoS2 crystals have been recognized as;quasi-two-dimensional semiconductors with remarkable physical;properties. We report our Raman scattering measurements on multilayer;and monolayer MoS2, especially in the low-frequency range (<50 cm(-1)).;We find two low-frequency Raman modes with a contrasting thickness;dependence. When increasing the number of MoS2 layers, one mode shows a;significant increase in frequency while the other decreases following a;1/N (N denotes the number of unit layers) trend. With the aid of;first-principles calculations we assign the former as the shear mode;E-2g(2). The latter is distinguished as the compression vibrational;mode, similar to the surface vibration of other epitaxial thin films.;The opposite evolution of the two modes with thickness demonstrates;vibrational modes in an atomically thin crystal as well as a more;precise way to characterize the thickness of atomically thin MoS2 films.;In addition, we observe a broad feature around 38 cm(-1) (5 meV) which;is visible only under near-resonance excitation and pinned at a fixed;energy, independent of thickness. We interpret the feature as an;electronic Raman scattering associated with the spin-orbit coupling;induced splitting in a conduction band at K points in their Brillouin;zone.;Liu, Kai/K-4157-2012; Cui, Xiaodong/C-2023-2009; Zeng, Hualing/J-4411-2014;Cui, Xiaodong/0000-0002-2013-8336;;19;1;0;0;19;1098-0121;WOS:000312025300002;;;J;Anand, V. K.;Johnston, D. C.;Observation of a phase transition at 55 K in single-crystal CaCu1.7As2;PHYSICAL REVIEW B;86;21;214501;10.1103/PhysRevB.86.214501;DEC 5 2012;2012;We present the structural, magnetic, thermal and ab-plane electronic;transport properties of single crystals of CaCu1.7As2 grown by the;self-flux technique that were investigated by powder x-ray diffraction,;magnetic susceptibility chi, isothermal magnetization M, specific heat;C-p, and electrical resistivity rho measurements as a function of;temperature T and magnetic field H. X-ray diffraction analysis of;crushed crystals at room temperature confirm the collapsed tetragonal;ThCr2Si2-type structure with similar to 15% vacancies on the Cu sites as;previously reported, corresponding to the composition CaCu1.7As2. The;chi(T) data are diamagnetic, anisotropic, and nearly independent of T.;The chi is larger in the ab plane than along the c axis, as also;observed previously for SrCu2As2 and for pure and doped BaFe2As2. The;C-p(T) and rho(T) data indicate metallic sp-band character. In contrast;to the rho(T) and C-p(T) data that do not show any evidence for phase;transitions below 300 K, the rho(T) data exhibit a sharp decrease on;cooling below a temperature T-t = 54-56 K, depending on the crystal. The;chi(T) data show no hysteresis on warming and cooling through T-t and;the transition thus appears to be second order. The phase transition may;arise from spatial ordering of the vacancies on the Cu sublattice. The;T-t is found to be independent of H for H <= 8 T. A positive;magnetoresistance is observed below T-t that increases with decreasing T;and attains a value in H = 8.0 T of 8.7% at T = 1.8 K.;Anand, Vivek Kumar/J-3381-2013;Anand, Vivek Kumar/0000-0003-2023-7040;5;0;0;0;5;1098-0121;WOS:000311910400003;;;J;Avetisyan, Siranush;Pietilaeinen, Pekka;Chakraborty, Tapash;Strong enhancement of Rashba spin-orbit coupling with increasing;anisotropy in the Fock-Darwin states of a quantum dot (vol 85, 153301,;2012);PHYSICAL REVIEW B;86;23;239901;10.1103/PhysRevB.86.239901;DEC 5 2012;2012;1;0;0;0;1;1098-0121;WOS:000311911500005;;;J;Berman, Oleg L.;Kezerashvili, Roman Ya.;Ziegler, Klaus;Superfluidity and collective properties of excitonic polaritons in;gapped graphene in a microcavity;PHYSICAL REVIEW B;86;23;235404;10.1103/PhysRevB.86.235404;DEC 5 2012;2012;We predict the formation and superfluidity of polaritons in an optical;microcavity formed by excitons in gapped graphene embedded there and;microcavity photons. The Rabi splitting related to the creation of an;exciton in a graphene layer in the presence of the band gap is obtained.;It is demonstrated that the Rabi splitting decreases when the energy gap;increases, while the larger value of the dielectric constant of the;microcavity gives a smaller value for the Rabi splitting. The analysis;of collective excitations as well as the sound velocity is presented. We;show that the superfluid density n(s) and temperature of the;Kosterlitz-Thouless phase transition T-c are decreasing functions of the;energy gap.;2;0;0;0;2;1098-0121;WOS:000311911500004;;;J;Bernu, S.;Fertey, P.;Itie, J. -P.;Berger, H.;Foury-Leylekian, P.;Pouget, J. -P.;Vanishing of the metal-insulator Peierls transition in pressurized BaVS3;PHYSICAL REVIEW B;86;23;235105;10.1103/PhysRevB.86.235105;DEC 5 2012;2012;BaVS3 presents a metal-to-insulator (MI) transition at ambient pressure;due to the stabilization of a 2k(F) commensurate charge density wave;(CDW) Peierls ground state built on the dz(2) V orbitals. The MI;transition vanishes under pressure at a quantum critical point (QCP);where the electronic properties exhibit a non-Fermi liquid behavior. In;this paper, we determine the CDW phase diagram under pressure and show;that it combines both the vanishing of the second-order Peierls;transition and a commensurate-incommensurate first-order delocking;transition of the 2k(F) wave vector. We explain quantitatively the drop;of the MI critical temperature by the decrease of the electron-hole pair;lifetime of the CDW condensate due to an enhancement of the;hybridization between the dz(2) and e(t(2g)) levels of the V under;pressure.;0;0;0;0;0;1098-0121;WOS:000311911500001;;;J;Bobaru, S.;Gaudry, E.;de Weerd, M. -C.;Ledieu, J.;Fournee, V.;Competing allotropes of Bi deposited on the Al13Co4(100) alloy surface;PHYSICAL REVIEW B;86;21;214201;10.1103/PhysRevB.86.214201;DEC 5 2012;2012;The growth and stability of Bi thin films on the Al13Co4(100) surface;has been investigated from the submonolayer to high-coverage regime by;scanning tunneling microscopy (STM) and low-energy electron diffraction;(LEED) for temperatures ranging from 57 to 633 K. Initially, Bi;adsorption leads to the formation of a pseudomorphic monolayer, followed;by the growth of islands of different heights with increasing coverage.;The in-plane structure, island height, and island morphology indicate;that these islands adopt either a pseudocubic (110) or hexagonal (111);orientation normal to the surface. The (110)-oriented islands correspond;to bilayer stacking (either two or four monolayers in height) while the;(111)-oriented islands correspond to either three-or four-layer;stacking. The in-plane orientation of (110) islands with respect to the;substrate is random, while (111) islands adopt one of four possible;orientations. In addition, the (111) islands show a moire structure. The;fact that Bi islands grow with either (110) or (111) orientation;simultaneously on the same substrate relates to a subtle energy balance;between both orientations according to ab initio calculations, allowing;both structures to coexist. The island density dependence versus both;deposition temperature and flux, their most frequent structure type,;reshaping effects, and chemical reactivity of the different allotropes;are also discussed in this paper.;Gaudry, Emilie/G-9682-2011; Ledieu, Julian/F-1430-2010;2;0;0;0;2;1098-0121;WOS:000311910400002;;;J;Czarnik, Piotr;Cincio, Lukasz;Dziarmaga, Jacek;Projected entangled pair states at finite temperature: Imaginary time;evolution with ancillas;PHYSICAL REVIEW B;86;24;245101;10.1103/PhysRevB.86.245101;DEC 5 2012;2012;A projected entangled pair state (PEPS) with ancillas is evolved in;imaginary time. This tensor network represents a thermal state of a;two-dimensional (2D) lattice quantum system. A finite-temperature phase;diagram of the 2D quantum Ising model in a transverse field is obtained;as a benchmark application.;2;0;0;0;2;1098-0121;WOS:000311912300002;;;J;de Jong, Maarten;Olmsted, David L.;van de Walle, Axel;Asta, Mark;First-principles study of the structural and elastic properties of;rhenium-based transition-metal alloys;PHYSICAL REVIEW B;86;22;224101;10.1103/PhysRevB.86.224101;DEC 5 2012;2012;Structural, energetic, and elastic properties of hexagonal-close-packed;rhenium-based transition-metal alloys are computed by density-functional;theory. The practical interest in these materials stems from the;attractive combination of mechanical properties displayed by rhenium for;structural applications requiring the combination of high melting;temperature and low-temperature ductility. Single-crystal elastic;constants, atomic volumes, axial c/a ratios, and dilute heats of;solution for Re-X alloys are computed, considering all possible;transition-metal solute species X. Calculated elastic constants are used;to compute values of a commonly considered intrinsic-ductility parameter;K/G, where K is the bulk modulus and G denotes the Voigt average of the;shear modulus, as well as the anisotropies in the Young's modulus and;shear modulus. The calculated properties show clear trends as a function;of d-band filling, which can be rationalized through tight-binding;theory. The results indicate that solutes to the left of rhenium in the;periodic table show a tendency to increase the intrinsic ductility;parameter, a trend that correlates with an increase of the c/a ratio;towards the ideal value associated optimal close packing. The Young's;modulus shows a trend towards increasing isotropy with alloying of;solutes X to the left of Re, while the shear modulus shows the opposite;trend but with an overall weaker dependence on solute additions. DOI:;10.1103/PhysRevB.86.224101;van de Walle, Axel/L-5676-2013;van de Walle, Axel/0000-0002-3415-1494;0;0;0;0;0;1098-0121;WOS:000311910900001;;;J;Fingerhut, Benjamin P.;Richter, Marten;Luo, Jun-Wei;Zunger, Alex;Mukamel, Shaul;Dissecting biexciton wave functions of self-assembled quantum dots by;double-quantum-coherence optical spectroscopy;PHYSICAL REVIEW B;86;23;235303;10.1103/PhysRevB.86.235303;DEC 5 2012;2012;Biexcitons feature prominently in various scenarios for utilization of;quantum dots (QDs) for enhancing the efficiencies of solar cells, and;for the generation of entangled photon pairs in single QD sources.;Two-dimensional double quantum coherence (2D-DQC) nonlinear optical;spectra provide novel spectroscopic signatures of such states beyond;global intensity and lifetime characteristics which are available by;more conventional techniques. We report the simulation of a prototype;2D-DQC optical experiment of a self-assembled InAs/GaAs dot. The;simulations consider the QD in different charged states and are based on;a state-of-the-art atomistic many-body pseudopotential method for the;calculation of the electronic structure and transition dipole matrix;elements. Comparison of the spectra of negatively charged, neutral, and;positively charged QD reveals optical signatures of their electronic;excitations. This technique directly accesses the biexciton (XX);energies as well as the projections of their wave functions on the;single-exciton manifold. These signals also provide a unique tool for;probing the charged state of the QD and thus the occupation of the;quantum state. Signatures of Pauli blockade of the creation of certain;single and two excitons due to charges on the particles are observed.;For all quantum states of the QD, the spectra reveal a strong;multiconfiguration character of the biexciton wave functions. Peak;intensities can be explained by interference of the contributing;Liouville space pathways.;Zunger, Alex/A-6733-2013; LUO, JUNWEI/B-6545-2013; LUO, JUN-WEI/A-8491-2010; Richter, Marten/B-7790-2008;Richter, Marten/0000-0003-4160-1008;2;0;0;0;2;1098-0121;WOS:000311911500003;;;J;Haskins, Justin B.;Moriarty, John A.;Hood, Randolph Q.;Polymorphism and melt in high-pressure tantalum;PHYSICAL REVIEW B;86;22;224104;10.1103/PhysRevB.86.224104;DEC 5 2012;2012;Recent small-cell (<150 atom) quantum molecular dynamics (QMD);simulations for Ta based on density functional theory (DFT) have;predicted a hexagonal omega (hex-omega)phase more stable than the normal;bcc phase at high temperature (T) and pressure (P) above 70 GPa [;Burakovsky et al., Phys. Rev. Lett. 104, 255702 (2010)]. Here we examine;possible high-T, P polymorphism in Ta with complementary DFT-based model;generalized pseudopotential theory (MGPT) multi-ion interatomic;potentials, which allow accurate treatment of much larger system sizes;(up to similar to 80000 atoms). We focus on candidate bcc, A15, fcc,;hcp, and hex-omega phases for the high-T, P phase diagram to 420 GPa,;studying the mechanical and relative thermodynamic stability of these;phases for both small and large computational cells. Our MGPT potentials;fully capture the T = 0 DFT energetics of these phases, while MGPT-MD;simulations demonstrate that the higher-energy fcc, hcp, and hex-omega;structures are only mechanically stabilized at high temperature by;large, size-dependent, anharmonic vibrational effects, with the;stability of the hex-omega phase also being found to be a sensitive;function of its c/a ratio. Both two-phase and Z-method melting;techniques have been used in MGPT-MD simulations to determine relative;phase stability and its size dependence. In the large-cell limit, the;two-phase method yields accurate equilibrium melt curves for all five;phases, with bcc producing the highest melt temperatures at all;pressures and hence being the most stable phase of those considered. The;two-phase bcc melt curve is also in good agreement with dynamic;experimental data as well as with the MGPT melt curve calculated from;bcc and liquid free energies. In contrast, we find that the Z method;produces only an upper bound to the equilibrium melt curve in the;large-cell limit. For the bcc and hex-omega structures, however, this is;a close upper bound within 5% of the two-phase results, although for the;A15, fcc, and hcp structures, the Z-melt curves are 25%-35% higher in;temperature than the two-phase results. Nonetheless, the Z method has;allowed us to study melt size effects in detail. We find these effects;to be either small or modest for the cubic bcc, A15, and fcc structures,;but to have a large impact on the hexagonal hcp and hex-omega melt;curves, which are dramatically pushed above that of bcc for simulation;cells less than 150 atoms. The melt size effects are driven by and;closely correlated with similar size effects on the mechanical stability;and the vibrational anharmonicity. We further show that for the same;simulation cell sizes and choice of c/a ratio, the MGPT-MD bcc and;hex-omega melt curves are in good agreement with the QMD results, so the;QMD prediction is confirmed in the small-cell limit. But in the;large-cell limit, the MGPT-MD hex-omega melt curve is always lowered;below that of bcc for any choice of c/a, so bcc is the most stable;phase. We conclude that for the non-bcc Ta phases studied, one requires;simulation cells of at least 250-500 atoms to be free of size effects;impacting mechanical and thermodynamic phase stability. DOI:;10.1103/PhysRevB.86.224104;8;0;0;0;8;1098-0121;WOS:000311910900004;;;J;Iwazaki, Yoshiki;Suzuki, Toshimasa;Mizuno, Youichi;Tsuneyuki, Shinji;Doping-induced phase transitions in ferroelectric BaTiO3 from;first-principles calculations;PHYSICAL REVIEW B;86;21;214103;10.1103/PhysRevB.86.214103;DEC 5 2012;2012;Carrier-electron-induced phase transition from tetragonal to cubic;phases in BaTiO3 is studied using first-principles calculation. Our;results show that the disappearance of the ferroelectric phase is an;intrinsic effect resulting from carrier electron doping in BaTiO3. We;further clarify that the lattice disorder induced by donor dopants such;as oxygen vacancies and substitutionally doped Nb5+ at Ti4+ sites;accelerates the disappearance of the tetragonal phase in BaTiO3.;7;0;0;0;7;1098-0121;WOS:000311910400001;;;J;Koshelev, A. E.;Phase diagram of Josephson junction between s and s(+/-) superconductors;in the dirty limit;PHYSICAL REVIEW B;86;21;214502;10.1103/PhysRevB.86.214502;DEC 5 2012;2012;The s(+/-) state in which the order parameter has different signs in;different bands is a leading candidate for the superconducting state in;the iron-based superconductors. We investigate a Josephson junction;between s and s(+/-) superconductors within microscopic theory.;Frustration, caused by interaction of the s-wave gap parameter with the;opposite-sign gaps of the s(+/-) superconductor, leads to nontrivial;phase diagram. When the partial Josephson coupling energy between the;s-wave superconductor and one of the s(+/-) bands dominates, s-wave gap;parameter aligns with the order parameter in this band. In this case,;the partial Josephson energies have different signs corresponding to;signs of the gap parameters. In the case of strong frustration,;corresponding to almost complete compensation of the total Josephson;energy, a nontrivial time-reversal-symmetry breaking (TRSB) state;realizes. In this state, all gap parameters become essentially complex.;As a consequence, this state provides realization for so-called;phi-junction with finite phase difference in the ground state. The width;of the TRSB state region is determined by the second harmonic in;Josephson current, proportional to sin(2 phi f), which appears in the;second order with respect to the boundary transparency. Using the;microscopic theory, we establish a range of parameters where different;states are realized. Our analysis shows insufficiency of the simple;phenomenological approach for treatment of this problem.;Koshelev, Alexei/K-3971-2013;Koshelev, Alexei/0000-0002-1167-5906;3;0;0;0;3;1098-0121;WOS:000311910400004;;;J;Krueger, Peter;Koutiri, Issam;Bourgeois, Sylvie;First-principles study of hexagonal tungsten trioxide: Nature of lattice;distortions and effect of potassium doping;PHYSICAL REVIEW B;86;22;224102;10.1103/PhysRevB.86.224102;DEC 5 2012;2012;A density functional theory study is reported on pure and potassium;doped tungsten trioxide. The nature of lattice distortions in the;hexagonal phase is analyzed and a new symmetry group is proposed. The;structure and stability of cubic, monoclinic, and hexagonal phases is;studied as a function of potassium doping and an approximate phase;diagram is derived. KxWO3 undergoes a monoclinic to hexagonal phase;transition at x similar to 3%. DOI: 10.1103/PhysRevB.86.224102;1;0;0;0;1;1098-0121;WOS:000311910900002;;;J;Landsgesell, S.;Abou-Ras, D.;Alber, D.;Prokes, K.;Wolf, T.;Direct evidence of chemical and crystallographic phase separation in;K0.65Fe1.74Se2;PHYSICAL REVIEW B;86;22;224502;10.1103/PhysRevB.86.224502;DEC 5 2012;2012;In the present work, we report on a chemical phase separation in;crystalline superconducting K0.65Fe1.74Se2, investigated by means of;magnetization experiments, scanning electron microscopy, electron;backscatter diffraction, and energy-dispersive x-ray spectrometry. It is;shown that the crystal consists of platelets oriented in < 100 > with an;approximated volume fraction of about 30% in the surrounding < 001 >;oriented matrix. The platelets (the matrix) are depleted in K (Fe) and;enriched in Fe (K). Chemical phase separation is demonstrated by a;stable, antiferromagnetic K0.8Fe1.6Se2 matrix, and KxFe2-y Se-2;platelets inducing superconductivity. This time-driven, chemical phase;separation is therefore responsible for various coexistent magnetic and;electrical properties measured in KxFeySe2 samples. DOI:;10.1103/PhysRevB.86.224502;Landsgesell, Sven/B-1467-2013; Prokes, Karel/J-5438-2013;Landsgesell, Sven/0000-0002-2469-3548; Prokes, Karel/0000-0002-7034-1738;10;0;0;0;10;1098-0121;WOS:000311910900005;;;J;Liu, Wei;Carrasco, Javier;Santra, Biswajit;Michaelides, Angelos;Scheffler, Matthias;Tkatchenko, Alexandre;Benzene adsorbed on metals: Concerted effect of covalency and van der;Waals bonding;PHYSICAL REVIEW B;86;24;245405;10.1103/PhysRevB.86.245405;DEC 5 2012;2012;The adsorption of aromatic molecules on metal surfaces plays a key role;in condensed matter physics and functional materials. Depending on the;strength of the interaction between the molecule and the surface, the;binding is typically classified as either physisorption or;chemisorption. Van der Waals (vdW) interactions contribute significantly;to the binding in physisorbed systems, but the role of the vdW energy in;chemisorbed systems remains unclear. Here we study the interaction of;benzene with the (111) surface of transition metals, ranging from weak;adsorption (Ag and Au) to strong adsorption (Pt, Pd, Ir, and Rh). When;vdW interactions are accurately accounted for, the barrier to adsorption;predicted by standard density-functional theory (DFT) calculations;essentially vanishes, producing a metastable precursor state on Pt and;Ir surfaces. Notably, vdW forces contribute more to the binding of;covalently bonded benzene than they do when benzene is physisorbed.;Comparison to experimental data demonstrates that some of the recently;developed methods for including vdW interactions in DFT allow;quantitative treatment of both weakly and strongly adsorbed aromatic;molecules on metal surfaces, extending the already excellent performance;found for molecules in the gas phase.;Michaelides, Angelos/K-8727-2012; Santra, Biswajit/C-4818-2008; Tkatchenko, Alexandre/E-7148-2011;Santra, Biswajit/0000-0003-3609-2106; Tkatchenko,;Alexandre/0000-0002-1012-4854;52;2;0;0;52;1098-0121;WOS:000311912300005;;;J;Ou, Xin;Koegler, Reinhard;Zhou, Hong-Bo;Anwand, Wolfgang;Grenzer, Joerg;Huebner, Rene;Voelskow, Matthias;Butterling, Maik;Zhou, Shengqiang;Skorupa, Wolfgang;Release of helium from vacancy defects in yttria-stabilized zirconia;under irradiation;PHYSICAL REVIEW B;86;22;224103;10.1103/PhysRevB.86.224103;DEC 5 2012;2012;Fission gas retention or release has a critical impact on the function;of advanced nuclear materials. Helium trapping in, and release from,;radiation defects induced by neutrons and by a decay in YSZ;(yttria-stabilized zirconia) is experimentally simulated using;synchronized Zr+ and He+ dual ion beam irradiation. The measured damage;profiles consist of two peaks which agree well with the calculated;profiles of implantation induced excess point defects. This special;implantation related effect has to be carefully considered in the;evaluation of experimental investigations which simulate isotropic;irradiation effects such as a decay. First-principles calculations show;that helium is energetically favorable to be trapped by Zr vacancies in;YSZ. Implanted helium alone in YSZ is accumulated in undesirable helium;bubbles and results in local surface swelling and lift-off. However,;under dual beam irradiation helium is released from vacancy defects and;is out-diffused at room temperature. Helium is mobilized by a;vacancy-assisted trapping/detrapping mechanism induced by the;simultaneous Zr+ ion implantation. This behavior avoids the deleterious;helium bubble formation and contributes to the suitable application;characteristics of YSZ which result in its excellent radiation hardness.;DOI: 10.1103/PhysRevB.86.224103;Zhou, Shengqiang/C-1497-2009;Zhou, Shengqiang/0000-0002-4885-799X;3;0;2;0;3;1098-0121;WOS:000311910900003;;;J;Pauly, C.;Bihlmayer, G.;Liebmann, M.;Grob, M.;Georgi, A.;Subramaniam, D.;Scholz, M. R.;Sanchez-Barriga, J.;Varykhalov, A.;Bluegel, S.;Rader, O.;Morgenstern, M.;Probing two topological surface bands of Sb2Te3 by spin-polarized;photoemission spectroscopy;PHYSICAL REVIEW B;86;23;235106;10.1103/PhysRevB.86.235106;DEC 5 2012;2012;Using high-resolution spin-and angle-resolved photoemission;spectroscopy, we map the electronic structure and spin texture of the;surface states of the topological insulator Sb2Te3. In combination with;density functional calculations (DFT), we directly show that Sb2Te3;exhibits a partially occupied, single spin-Dirac cone around the Fermi;energy E-F, which is topologically protected. DFT obtains a spin;polarization of the occupied Dirac cone states of 80-90%, which is in;reasonable agreement with the experimental data after careful background;subtraction. Furthermore, we observe a strongly spin-orbit split surface;band at lower energy. This state is found at E - E-F similar or equal to;-0.8 eV at the (Gamma) over bar point, disperses upward, and disappears;at about E - E-F = -0.4 eV into two different bulk bands. Along the;(Gamma) over bar-(K) over bar direction, the band is located within a;spin-orbit gap. According to an argument given by Pendry and Gurman in;1975, such a gap must contain a surface state, if it is located away;from the high-symmetry points of the Brillouin zone. Thus, the novel;spin-split state is protected by symmetry, too.;Bihlmayer, Gustav/G-5279-2013; Rader, Oliver/H-8498-2013; Sanchez-Barriga, Jaime/I-3493-2013; Varykhalov, Andrei/I-3571-2013; Blugel, Stefan/J-8323-2013; Liebmann, Marcus/G-6254-2012; Morgenstern, Markus/K-7785-2013;Bihlmayer, Gustav/0000-0002-6615-1122; Rader,;Oliver/0000-0003-3639-0971; Sanchez-Barriga, Jaime/0000-0001-9947-6700;;Varykhalov, Andrei/0000-0002-7901-3562; Blugel,;Stefan/0000-0001-9987-4733; Liebmann, Marcus/0000-0003-4787-0129;;Morgenstern, Markus/0000-0002-3993-6880;15;0;0;0;15;1098-0121;WOS:000311911500002;;;J;Silveirinha, Mario G.;Engheta, Nader;Metamaterial-inspired model for electron waves in bulk semiconductors;PHYSICAL REVIEW B;86;24;245302;10.1103/PhysRevB.86.245302;DEC 5 2012;2012;Based on an analogy with electromagnetic metamaterials, we develop an;effective medium description for the propagation of electron matter;waves in bulk semiconductors with a zinc-blende structure. It is;formally demonstrated that even though departing from a different;starting point, our theory gives results for the energy stationary;states consistent with Bastard's envelope-function approximation in the;long-wavelength limit. Using the proposed approach, we discuss the time;evolution of a wave packet in a bulk semiconductor with a zero-gap and;linear energy-momentum dispersion.;4;0;0;0;4;1098-0121;WOS:000311912300004;;;J;Valla, T.;Ji, Huiwen;Schoop, L. M.;Weber, A. P.;Pan, Z. -H.;Sadowski, J. T.;Vescovo, E.;Fedorov, A. V.;Caruso, A. N.;Gibson, Q. D.;Muechler, L.;Felser, C.;Cava, R. J.;Topological semimetal in a Bi-Bi2Se3 infinitely adaptive superlattice;phase;PHYSICAL REVIEW B;86;24;241101;10.1103/PhysRevB.86.241101;DEC 5 2012;2012;We report spin-and angle-resolved photoemission studies of a topological;semimetal from the infinitely adaptive series between elemental Bi and;Bi2Se3. The compound, based on Bi4Se3, is a 1:1 natural superlattice of;alternating Bi-2 layers and Bi2Se3 layers; the inclusion of S allows the;growth of large crystals, with the formula Bi4Se2.6S0.4. The crystals;cleave along the interfaces between the Bi-2 and Bi2Se3 layers, with the;surfaces obtained having alternating Bi or Se termination. The resulting;terraces, observed by photoemission electron microscopy, create avenues;suitable for the study of one-dimensional topological physics. The;electronic structure, determined by spin-and angle-resolved;photoemission spectroscopy, shows the existence of a surface state that;forms a large, hexagonally shaped Fermi surface around the Gamma point;of the surface Brillouin zone, with the spin structure indicating that;this material is a topological semimetal.;Felser, Claudia/A-5779-2009; Schoop, Leslie/A-4627-2013; Muchler, Lukas/A-4628-2013; Ji, Huiwen/O-5145-2014;Schoop, Leslie/0000-0003-3459-4241;;15;2;0;0;15;1098-0121;WOS:000311912300001;;;J;Witczak-Krempa, William;Ghaemi, Pouyan;Senthil, T.;Kim, Yong Baek;Universal transport near a quantum critical Mott transition in two;dimensions;PHYSICAL REVIEW B;86;24;245102;10.1103/PhysRevB.86.245102;DEC 5 2012;2012;We discuss the universal-transport signatures near a zero-temperature;continuous Mott transition between a Fermi liquid and a quantum spin;liquid in two spatial dimensions. The correlation-driven transition;occurs at fixed filling and involves fractionalization of the electron:;upon entering the spin liquid, a Fermi surface of neutral spinons;coupled to an internal gauge field emerges. We present a controlled;calculation of the value of the zero-temperature universal resistivity;jump predicted to occur at the transition. More generally, the behavior;of the universal scaling function that collapses the temperature-and;pressure-dependent resistivity is derived, and is shown to bear a strong;imprint of the emergent gauge fluctuations. We further predict a;universal jump of the thermal conductivity across the Mott transition,;which derives from the breaking of conformal invariance by the damped;gauge field, and leads to a violation of the Wiedemann-Franz law in the;quantum critical region. A connection to the quasitriangular organic;salts is made, where such a transition might occur. Finally, we present;some transport results for the pure rotor O(N) conformal field theory.;10;0;0;0;10;1098-0121;WOS:000311912300003;;;J;Apostolov, Stanislav;Levchenko, Alex;Josephson current and density of states in proximity circuits with;s(+)-superconductors;PHYSICAL REVIEW B;86;22;224501;10.1103/PhysRevB.86.224501;DEC 4 2012;2012;We study the emergent proximity effect in mesoscopic circuits that;involve a conventional superconductor and an unconventional pnictide;superconductor separated by a diffusive normal or ferromagnetic wire.;The focus is placed on revealing signatures of the proposed s(+)-state;of pnictides from the proximity-induced density of states and Josephson;current. We find analytically a universal result for the density of;states that exhibits both the Thouless gap at low energies and peculiar;features near the superconducting gap edges at higher energies. The;latter may be used to discriminate between s(+)- and s(++) symmetry;scenarios in scanning tunneling spectroscopy experiments. We also;calculate Josephson current-phase relationships for different junction;configurations, which are found to display robust 0-pi transitions for a;wide range of parameters.;3;0;0;0;3;1098-0121;WOS:000311910600005;;;J;Balci, Sinan;Kocabas, Coskun;Ates, Simge;Karademir, Ertugrul;Salihoglu, Omer;Aydinli, Atilla;Tuning surface plasmon-exciton coupling via thickness dependent plasmon;damping;PHYSICAL REVIEW B;86;23;235402;10.1103/PhysRevB.86.235402;DEC 4 2012;2012;In this paper, we report experimental and theoretical investigations on;tuning of the surface plasmon-exciton coupling by controlling the;plasmonic mode damping, which is defined by the plasmonic layer;thickness. The results reveal the formation of plasmon-exciton hybrid;state characterized by a tunable Rabi splitting with energies ranging;from 0 to 150 meV. Polarization-dependent spectroscopic reflection;measurements were employed to probe the dispersion of the coupled;system. The transfer matrix method and analytical calculations were used;to model the self-assembled J-aggregate/metal multilayer structures in;excellent agreement with experimental observations.;Kocabas, Coskun/C-6018-2013;6;0;0;0;6;1098-0121;WOS:000311911100002;;;J;Belashchenko, K. D.;Glasbrenner, J. K.;Wysocki, A. L.;Spin injection from a half-metal at finite temperatures;PHYSICAL REVIEW B;86;22;224402;10.1103/PhysRevB.86.224402;DEC 4 2012;2012;Spin injection from a half-metallic electrode in the presence of thermal;spin disorder is analyzed using a combination of random matrix theory,;spin-diffusion theory, and explicit simulations for the tight-binding;s-d model. It is shown that efficient spin injection from a half-metal;is possible as long as the effective resistance of the normal metal does;not exceed a characteristic value, which does not depend on the;resistance of the half-metallic electrode but, rather, is controlled by;spin-flip scattering at the interface. This condition can be formulated;as alpha less than or similar to l/l(sf)(N) T-c(-1) where a is the;relative deviation of the magnetization from saturation, l and l(sf)(N);are the mean-free path and the spin-diffusion length in the nonmagnetic;channel, and T-c is the transparency of the tunnel barrier at the;interface (if present). The general conclusions are confirmed by;tight-binding s-d model calculations. A rough estimate suggests that;efficient spin injection from true half-metallic ferromagnets into;silicon or copper may be possible at room temperature across a;transparent interface.;Wysocki, Aleksander/D-6928-2013;1;0;0;0;1;1098-0121;WOS:000311910600003;;;J;Bessas, D.;Sergueev, I.;Wille, H. -C.;Persson, J.;Ebling, D.;Hermann, R. P.;Lattice dynamics in Bi2Te3 and Sb2Te3: Te and Sb density of phonon;states;PHYSICAL REVIEW B;86;22;224301;10.1103/PhysRevB.86.224301;DEC 4 2012;2012;The lattice dynamics in Bi2Te3 and Sb2Te3 were investigated both;microscopically and macroscopically using Sb-121 and Te-125 nuclear;inelastic scattering, x-ray diffraction, and heat capacity measurements.;In combination with earlier inelastic neutron scattering data, the;element-specific density of phonon states was obtained for both;compounds and phonon polarization analysis was carried out for Bi2Te3. A;prominent peak in the Te specific density of phonon states at 13 meV,;that involves mainly in-plane vibrations, is mostly unaffected upon;substitution of Sb with Bi revealing vibrations with essentially Te;character. A significant softening is observed for the density of;vibrational states of Bi with respect to Sb, consistently with the mass;homology relation in the long-wavelength limit. In order to explain the;energy mismatch in the optical phonon region, a similar to 20% force;constant softening of the Sb-Te bond with respect to the Bi-Te bond is;required. The reduced average speed of sound at 20 K in Bi2Te3, 1.75(1);km/s, compared to Sb2Te3, 1.85(4) km/s, is not only related to the;larger mass density but also to a larger Debye level. The observed low;lattice thermal conductivity at 295 K, 2.4 Wm(-1)K(-1) for Sb2Te3 and;1.6 Wm(-1)K(-1) for Bi2Te3, cannot be explained by anharmonicity alone;given the rather modest Gruneisen parameters, 1.7(1) for Sb2Te3 and;1.5(1) for Bi2Te3, without accounting for the reduced speed of sound and;more importantly the low acoustic cutoff energy.;Wille, Hans-Christian/C-3881-2013; Hermann, Raphael/F-6257-2013; Bessas, Dimitrios/I-5262-2013;Hermann, Raphael/0000-0002-6138-5624; Bessas,;Dimitrios/0000-0003-0240-2540;5;0;1;0;5;1098-0121;WOS:000311910600002;;;J;de Resseguier, T.;Lescoute, E.;Loison, D.;Influence of elevated temperature on the wave propagation and spallation;in laser shock-loaded iron;PHYSICAL REVIEW B;86;21;214102;10.1103/PhysRevB.86.214102;DEC 4 2012;2012;Laser shock experiments have been performed on preheated iron samples to;address the role of initial temperature on the elastic limit, wave;propagation, and spall fracture in this metal over the temperature range;300-1000 K at very high expansion rates of the order of 3 x 10(6) s(-1).;Time-resolved measurements of the free-surface velocity indicate a;slight, roughly linear decrease of the spall strength with increasing;temperature, accompanied by a clear change from brittle to ductile;fracture behavior evidenced from post-shot examination of the recovered;samples. The results are discussed on the basis of simulations;accounting for laser-matter interaction, pressure wave propagation, and;subsequent polymorphic transformations throughout the sample thickness.;Over the explored range of loading conditions, the occurrence of such;transformations prior to spallation, which takes place near the;free-surface under tensile loading after reversion to the alpha phase,;does not seem to strongly affect dynamic fracture.;loison, didier/N-2122-2014;3;0;0;0;3;1098-0121;WOS:000311910100001;;;J;Ellis, David S.;Uchiyama, Hiroshi;Tsutsui, Satoshi;Sugimoto, Kunihisa;Kato, Kenichi;Ishikawa, Daisuke;Baron, Alfred Q. R.;Phonon softening and dispersion in EuTiO3;PHYSICAL REVIEW B;86;22;220301;10.1103/PhysRevB.86.220301;DEC 4 2012;2012;We measured phonon dispersion in single-crystal EuTiO3 using inelastic;x-ray scattering. Astructural transition to an antiferrodistortive phase;was found at a critical temperature T-0 = 287 +/- 1K using powder and;single-crystal x-ray diffraction. Clear softening of the zone boundary;R-point q = (0.5 0.5 0.5) acoustic phonon shows this to be a displacive;transition. The mode energy plotted against reduced temperature could be;seen to nearly overlap that of SrTiO3, suggesting a universal scaling;relation. Phonon dispersion was measured along Gamma-X (0 0 0) -> (0.5 0;0). Mode eigenvectors were obtained from a shell model consistent with;the q dependence of intensity and energy, which also showed that the;dispersion is nominally the same as in SrTiO3 at room temperature, but;corrected for mass. The lowest-energy optical mode, determined to be of;Slater character, softens approximately linearly with temperature until;the 70-100 K range where the softening stops, and at low temperature,;the mode disperses linearly near the zone center.;7;0;0;0;7;1098-0121;WOS:000311910600001;;;J;Fock, J.;Leijnse, M.;Jennum, K.;Zyazin, A. S.;Paaske, J.;Hedegard, P.;Nielsen, M. Brondsted;van der Zant, H. S. J.;Manipulation of organic polyradicals in a single-molecule transistor;PHYSICAL REVIEW B;86;23;235403;10.1103/PhysRevB.86.235403;DEC 4 2012;2012;Inspired by cotunneling spectroscopy of spin-states in a single;OPE5-based molecule, we investigate the prospects for electric control;of magnetism in purely organic molecules contacted in a three-terminal;geometry. Using the gate electrode, the molecule is reversibly switched;between three different redox states, with magnetic spectra revealing;both ferromagnetic and antiferromagnetic exchange couplings on the;molecule. These observations are shown to be captured by an effective;low-energy Heisenberg model, which we substantiate microscopically by a;simple valence bond description of the molecule. These preliminary;findings suggest an interesting route towards functionalized all-organic;molecular magnetism.;Fock, Jeppe/A-9074-2011;Fock, Jeppe/0000-0002-7515-4026;3;0;0;0;3;1098-0121;WOS:000311911100003;;;J;Li, P. H. Y.;Bishop, R. F.;Campbell, C. E.;Farnell, D. J. J.;Goetze, O.;Richter, J.;Spin-1/2 Heisenberg antiferromagnet on an anisotropic kagome lattice;PHYSICAL REVIEW B;86;21;214403;10.1103/PhysRevB.86.214403;DEC 4 2012;2012;We use the coupled-cluster method to study the zero-temperature;properties of an extended two-dimensional Heisenberg antiferromagnet;formed from spin-1/2 moments on an infinite spatially anisotropic kagome;lattice of corner-sharing isosceles triangles, with nearest-neighbor;bonds only. The bonds have exchange constants J(1) > 0 along two of the;three lattice directions and J(2) = kappa J(1) > 0 along the third. In;the classical limit, the ground-state (GS) phase for kappa < 1/2 has;collinear ferrimagnetic (Neel') order where the J(2)-coupled chain spins;are ferromagnetically ordered in one direction with the remaining spins;aligned in the opposite direction, while for kappa > 1/2 there exists an;infinite GS family of canted ferrimagnetic spin states, which are;energetically degenerate. For the spin-1/2 case, we find that quantum;analogs of both these classical states continue to exist as stable GS;phases in some regions of the anisotropy parameter kappa, namely, for 0;< kappa < kappa(c1) for the Neel' state and for (at least part of) the;region kappa > kappa(c2) for the canted phase. However, they are now;separated by a paramagnetic phase without either sort of magnetic order;in the region kappa(c1) < kappa < kappa(c2), which includes the;isotropic kagome point kappa = 1 where the stable GS phase is now;believed to be a topological (Z(2)) spin liquid. Our best numerical;estimates are kappa(c1) = 0.515 +/- 0.015 and kappa(c2) = 1.82 +/- 0.03.;Richter, Johannes/A-6339-2009; Bishop, Raymond/D-9715-2012;Bishop, Raymond/0000-0001-5565-0658;4;0;0;0;4;1098-0121;WOS:000311910100002;;;J;Monozon, B. S.;Schmelcher, P.;Bound and resonant impurity states in a narrow gapped armchair graphene;nanoribbon;PHYSICAL REVIEW B;86;24;245404;10.1103/PhysRevB.86.245404;DEC 4 2012;2012;An analytical study of discrete and resonant impurity quasi-Coulomb;states in a narrow gapped armchair graphene nanoribbon (GNR) is;performed. We employ the adiabatic approximation assuming that the;motions parallel ("slow") and perpendicular ("fast") to the boundaries;of the ribbon are separated adiabatically. The energy spectrum comprises;a sequence of series of quasi-Rydberg levels relevant to the slow motion;adjacent from the low energies to the size-quantized levels associated;with the fast motion. Only the series attributed to the ground;size-quantized subband is really discrete, while others corresponding to;the excited subbands consist of quasidiscrete (Fano resonant) levels of;nonzero energetic widths, caused by the coupling with the states of the;continuous spectrum branching from the low lying subbands. In the;two-and three-subband approximation the spectrum of the complex energies;of the impurity electron is derived in an explicit form. Narrowing the;GNR leads to an increase of the binding energy and the resonant width;both induced by the finite width of the ribbon. Displacing the impurity;center from the midpoint of the GNR causes the binding energy to;decrease, while the resonant width of the first excited Rydberg series;increases. As for the second excited series, their widths become;narrower with the shift of the impurity. A successful comparison of our;analytical results with those obtained by other theoretical and;experimental methods is presented. Estimates of the binding energies and;the resonant widths taken for the parameters of typical GNRs show that;not only the strictly discrete but also some resonant states are quite;stable and could be studied experimentally in doped GNRs.;Monozon, Boris/E-6412-2012; Schmelcher, Peter/D-9592-2014;Schmelcher, Peter/0000-0002-2637-0937;0;0;0;0;0;1098-0121;WOS:000311911900002;;;J;Thiaville, Andre;Vukadinovic, Nicolas;Acher, Olivier;Sum rule for the magnetic permeability of arbitrary textures;PHYSICAL REVIEW B;86;21;214404;10.1103/PhysRevB.86.214404;DEC 4 2012;2012;The f-sum rule for the magnetic permeability, derived previously for an;assembly of isolated macrospins, is generalized for an arbitrary;nonuniform three-dimensional magnetization texture, in which the;magnetizations at different points are coupled by exchange and;magnetostatic interactions. The sum value depends only on the magnetic;texture at rest. It has no direct contribution from the exchange energy,;but depends on the anisotropy, applied field, and demagnetizing;energies. The derived formula is tested against numerical calculations;for several complex and very different magnetization structures. This;generalized sum rule should be useful for experiments, numerical;simulations, and metrology.;1;0;0;0;1;1098-0121;WOS:000311910100003;;;J;Troc, R.;Gajek, Z.;Pikul, A.;Dualism of the 5f electrons of the ferromagnetic superconductor UGe2 as;seen in magnetic, transport, and specific-heat data;PHYSICAL REVIEW B;86;22;224403;10.1103/PhysRevB.86.224403;DEC 4 2012;2012;Single-crystalline UGe2 was investigated by means of magnetic;susceptibility, magnetization, electrical resistivity,;magnetoresistivity, and specific-heat measurements, all carried out in;wide temperature and magnetic-field ranges. An analysis of the obtained;data points out the dual behavior of the 5f electrons in this compound,;i. e., possessing simultaneously local and itinerant characters in two;substates. The magnetic and thermal characteristics of the compound were;modeled using the effective crystal field (CF) in the intermediate;coupling scheme and initial parameters obtained in the angular overlap;model. Various configurations of the localized 5f(n) (n = 1, 2, and 3);electrons on the uranium ion have been probed. The best results were;obtained for the 5f(2) (U4+) configuration. The CF parameters obtained;in the paramagnetic region allowed us to reproduce satisfactorily the;experimental findings in the whole temperature range including also the;magnitude of the ordered magnetic moment of uranium at low temperature.;The electrical resistivity data after subtraction of the phonon;contribution reveal the presence of a Kondo-like interaction in UGe2;supporting the idea of partial localization of the 5f electrons in UGe2.;On the other hand, magnetoresistivity and an excess of specific heat;originated from the hybridized (itinerant) part of 5f states, apparent;around the characteristic temperature T*, give a distinct signature for;the presence of the coupled charge-density wave and spin-density wave;fluctuations over all the ferromagnetic region with a maximum at T*,;postulated earlier in the literature.;7;0;0;0;7;1098-0121;WOS:000311910600004;;;J;Williams, T. J.;Yamani, Z.;Butch, N. P.;Luke, G. M.;Maple, M. B.;Buyers, W. J. L.;Neutron scattering study of URu2-xRexSi2 (x=0.10): Driving order towards;quantum criticality;PHYSICAL REVIEW B;86;23;235104;10.1103/PhysRevB.86.235104;DEC 4 2012;2012;We report inelastic neutron scattering measurements in the hidden order;state of URu2-xRexSi2 with x = 0.10. We observe that towards the;ferromagnetic quantum critical point induced by the negative chemical;pressure of Re doping, the gapped incommensurate fluctuations are robust;and comparable in intensity to the parent material. As the Re doping;moves the system toward the quantum critical point, the commensurate;spin fluctuations related to hidden order weaken, display a shortened;lifetime, and slow down. Halfway to the quantum critical point, the;hidden order phase survives, albeit weakened, in contrast to its;destruction by hydrostatic pressure and by positive chemical pressure;from Rh doping.;yamani, zahra/B-7892-2012; Luke, Graeme/A-9094-2010;0;0;0;0;0;1098-0121;WOS:000311911100001;;;J;Wolfowicz, Gary;Simmons, Stephanie;Tyryshkin, Alexei M.;George, Richard E.;Riemann, Helge;Abrosimov, Nikolai V.;Becker, Peter;Pohl, Hans-Joachim;Lyon, Stephen A.;Thewalt, Mike L. W.;Morton, John J. L.;Decoherence mechanisms of Bi-209 donor electron spins in isotopically;pure Si-28;PHYSICAL REVIEW B;86;24;245301;10.1103/PhysRevB.86.245301;DEC 4 2012;2012;Bismuth (Bi-209) is the deepest group V donor in silicon and possesses;the most extreme characteristics such as a 9/2 nuclear spin and a 1.5;GHz hyperfine coupling. These lead to several potential advantages for a;Si:Bi donor electron spin qubit compared to the more common phosphorus;donor. Most previous studies on Si: Bi have been performed using natural;silicon where linewidths and electron spin coherence times are limited;by the presence of Si-29 impurities. Here, we describe electron spin;resonance (ESR) and electron nuclear double resonance (ENDOR) studies on;Bi-209 in isotopically pure Si-28. ESR and ENDOR linewidths, transition;probabilities, and coherence times are understood in terms of the spin;Hamiltonian parameters showing a dependence on field and m(I) of the;Bi-209 nuclear spin. We explore various decoherence mechanisms;applicable to the donor electron spin, measuring coherence times up to;700 ms at 1.7 K at X band, comparable with Si-28:P. Importantly, the;coherence times we measure follow closely to the calculated field;gradients of the transition frequencies (df/dB), providing a strong;motivation to explore "clock" transitions where coherence lifetimes;could be further enhanced.;Morton, John/I-3515-2013;6;1;0;0;6;1098-0121;WOS:000311911900001;;;J;Armbruster, Oskar;Lungenschmied, Christoph;Bauer, Siegfried;Investigation of trap states and mobility in organic semiconductor;devices by dielectric spectroscopy: Oxygen-doped P3HT:PCBM solar cells;PHYSICAL REVIEW B;86;23;235201;10.1103/PhysRevB.86.235201;DEC 3 2012;2012;We investigate the dielectric response of solar cell devices based on;oxygen-doped poly(3-hexylthiophene):[6,6]-phenyl-C-61-butyric acid;methyl ester (P3HT:PCBM) blends as a function of temperature between 133;K and 303 K. The spectra are analyzed using a recently introduced model;[O. Armbruster, C. Lungenschmied, and S. Bauer, Phys. Rev. B 84, 085208;(2011)] which is based on a trapping and reemission mechanism of charge;carriers. A dominating trap depth of 130 meV is determined and the;broadening of this trap level identified as purely thermal. In addition;we estimate the density of charge carriers after doping as well as their;mobility. We show that the concentration of mobile holes approximately;doubles by heating the device from the lowest to the highest measured;temperature. This is indicative of a second, shallow trap level of;approximately 14 meV. Dielectric spectroscopy hence proves to be a;valuable tool to assess device parameters such as dopant concentration,;charge carrier transport characteristics, and mobility which are of;crucial interest for understanding degradation in organic semiconductor;devices.;Bauer, Siegfried/A-2354-2009; Armbruster, Oskar/G-1154-2014;Armbruster, Oskar/0000-0002-4235-4451;3;0;0;0;3;1098-0121;WOS:000311806300004;;;J;Chen, Bo;Abbey, Brian;Dilanian, Ruben;Balaur, Eugeniu;van Riessen, Grant;Junker, Mark;Tran, Chanh Q.;Jones, Michael W. M.;Peele, Andrew G.;McNulty, Ian;Vine, David J.;Putkunz, Corey T.;Quiney, Harry M.;Nugent, Keith A.;Diffraction imaging: The limits of partial coherence;PHYSICAL REVIEW B;86;23;235401;10.1103/PhysRevB.86.235401;DEC 3 2012;2012;Coherent diffraction imaging (CDI) typically requires that the source;should be highly coherent both laterally and longitudinally. In this;paper, we demonstrate that lateral and longitudinal partial coherence;can be successfully included in a CDI reconstruction algorithm;simultaneously using experimental x-ray data. We study the interplay;between lateral partial coherence and longitudinal partial coherence and;their relative influence on CDI. We compare our results against the;coherence criteria published by Spence et al. [Spence et al.,;Ultramicroscopy 101, 149 (2004)] and show that for iterative ab initio;phase-recovery algorithms based on those typically used in CDI and in;cases where the coherence properties are known, we are able to relax the;minimal coherence requirements by a factor of 2 both laterally and;longitudinally, potentially yielding significant reduction in exposure;time.;Jones, Michael/M-6895-2013; Abbey, Brian/D-3274-2011;Jones, Michael/0000-0002-0720-8715;;5;1;0;0;5;1098-0121;WOS:000311806300008;;;J;Gawarecki, Krzysztof;Lueker, Sebastian;Reiter, Doris E.;Kuhn, Tilmann;Glaessl, Martin;Axt, Vollrath Martin;Grodecka-Grad, Anna;Machnikowski, Pawel;Dephasing in the adiabatic rapid passage in quantum dots: Role of;phonon-assisted biexciton generation;PHYSICAL REVIEW B;86;23;235301;10.1103/PhysRevB.86.235301;DEC 3 2012;2012;We study the evolution of an exciton confined in a quantum dot;adiabatically controlled by a frequency-swept (chirped) laser pulse in;the presence of carrier-phonon coupling. We focus on the dynamics;induced by a linearly polarized beam and analyze the decoherence due to;phonon-assisted biexciton generation. We show that if the biexciton;state is shifted down by a few meV, as is typically the case, then the;resulting decoherence is strong even at low temperatures. As a result,;efficient state preparation is restricted to a small parameter area;corresponding to low temperatures, positive chirps, and moderate pulse;areas.;Kuhn, Tilmann/C-1190-2008;6;0;0;0;6;1098-0121;WOS:000311806300006;;;J;Hellstrom, Matti;Spangberg, Daniel;Hermansson, Kersti;Broqvist, Peter;Cu dimer formation mechanism on the ZnO(10(1)over-bar0) surface;PHYSICAL REVIEW B;86;23;235302;10.1103/PhysRevB.86.235302;DEC 3 2012;2012;The formation of Cu dimers on the ZnO(10 (1) over bar0) surface has been;studied using hybrid density functional theory. Depending on the;adsorption site, Cu atoms are found to adsorb with either oxidation;state 0 or +1. In the latter case, the Cu atom has donated an electron;to the ZnO conduction band. The two modes of adsorption display similar;stability at low coverages, while at higher coverages the neutral;species is more stable. Single Cu atoms diffuse across the ZnO(10 (1);over bar0) surface with small barriers of migration (0.3-0.4 eV) along;ZnO[1 (2) over bar 10], repeatedly switching their oxidation states,;while the barrier along ZnO[0001] is significantly higher (>1.5 eV). The;formation of a Cu dimer from two adsorbed Cu atoms is energetically;favorable with two competing structures of similar stability, both being;charge neutral. The minimum energy paths for Cu atom diffusion and dimer;formation are characterized by at least one of the two Cu atoms being in;oxidation state 0.;5;0;0;0;5;1098-0121;WOS:000311806300007;;;J;Huang, Yu-Kun;Chen, Pochung;Kao, Ying-Jer;Accurate computation of low-temperature thermodynamics for quantum spin;chains;PHYSICAL REVIEW B;86;23;235102;10.1103/PhysRevB.86.235102;DEC 3 2012;2012;We apply the biorthonormal transfer-matrix renormalization group (BTMRG);[Huang, Phys. Rev. E 83, 036702 (2011)] to study low-temperature;properties of quantum spin chains. Simulations on anisotropic Heisenberg;spin-1/2 chains demonstrate that the BTMRG outperforms the conventional;transfer-matrix renormalization group by successfully accessing far;lower temperature than previously reported, while retaining the same;level of accuracy. The power of the method is further illustrated by the;calculation of the low-temperature specific heat for a frustrated spin;chain.;Kao, Ying Jer/B-5297-2009; Chen, Pochung/G-1241-2010;Kao, Ying Jer/0000-0002-3329-6018;;4;0;0;0;4;1098-0121;WOS:000311806300002;;;J;Kim, Jin Hee;Rhyee, Jong-Soo;Kwon, Yong Seung;Magnon gap formation and charge density wave effect on thermoelectric;properties in the SmNiC2 compound;PHYSICAL REVIEW B;86;23;235101;10.1103/PhysRevB.86.235101;DEC 3 2012;2012;We studied the electrical, thermal, and thermoelectric properties of the;polycrystalline compound of SmNiC2. The electrical resistivity and;magnetization measurement show the interplay between the charge density;wave at T-CDW = 150 K and the ferromagnetic ordering of T-c = 18 K.;Below the ferromagnetic transition temperature, we observed the magnon;gap formation of Delta similar or equal to 4.3- 4.4 meV by rho(T) and;C-p (T) measurements. The charge density wave is attributed to the;increase of the Seebeck coefficient resulting in the increase of the;power factor S-2 sigma. The thermal conductivity anomalously increases;with increasing temperature along the whole measured temperature range,;which implies the weak attribution of Umklapp phonon scattering. The;thermoelectric figure of merit ZT significantly increases due to the;increase of the power factor at T-CDW = 150 K. Here we argue that the;competing interaction between electron-phonon and electron-magnon;couplings exhibits the unconventional behavior of electrical and thermal;properties.;6;0;1;0;6;1098-0121;WOS:000311806300001;;;J;Osorio-Guillen, J. M.;Larrauri-Pizarro, Y. D.;Dalpian, G. M.;Pressure-induced metal-insulator transition and absence of magnetic;order in FeGa3 from a first-principles study;PHYSICAL REVIEW B;86;23;235202;10.1103/PhysRevB.86.235202;DEC 3 2012;2012;The intermetallic compound FeGa3 is a narrow-gap semiconductor with a;measured gap between 0.2 and 0.6 eV. The presence of iron d states on;the top of the valence band and on the bottom of the conduction band,;together with its moderate electronic correlation (U/W similar to 0.6),;have led to the question of whether there is magnetic order in this;compound. We have examined the possible presence of magnetism in FeGa3;as well as its electronic structure at high pressures, using the density;functional theory (DFT) + U method with the intermediated;double-counting scheme. We have found that for an optimized value of the;Yukawa screening length., there is no magnetic moment on the iron ions;(mu = 0), implying that FeGa3 is nonmagnetic. We have also found that;around a pressure of 25 GPa a metal-insulator transition takes place.;Osorio-Guillen, Jorge/B-7587-2008; Dalpian, Gustavo/B-9746-2008;Osorio-Guillen, Jorge/0000-0002-7384-8999;;3;0;0;0;3;1098-0121;WOS:000311806300005;;;J;Yuan, Xun;Zhang, Yubo;Abtew, Tesfaye A.;Zhang, Peihong;Zhang, Wenqing;VO2: Orbital competition, magnetism, and phase stability;PHYSICAL REVIEW B;86;23;235103;10.1103/PhysRevB.86.235103;DEC 3 2012;2012;The relative phase stability of VO2 is one of the most fundamental;issues concerning the metal-insulator transition in this material but;has been so far largely unexplored theoretically. We investigate the;relative stability of various phases of VO2 using different levels of;energy functionals within density functional theory (DFT). It is found;that straightforward applications of several popular energy functionals,;including the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, result in;a wrong prediction for the ground state of VO2. In particular, although;the HSE and DFT + U methods are able to produce a band gap in the M-1;phase, they strongly favor the formation of local magnetic moments, a;result that clearly disagrees with experiments. We also examine the;effect of the occupation and the redistribution of the d derived t(2g);(i.e., d(xz), d(yz), and d(x2-y2)) orbitals of V atoms on the calculated;relative phase stability of VO2. We find that a small change in d;occupation can result in a drastically different theoretical prediction.;With the introduction of an orbital-dependent potential, a complete;separation between the d(x2-y2) derived valence band and d(xz) and d(yz);derived conduction bands in the M-1 phase is achieved, resulting in a;slight redistribution of the d occupation and a more faithful account of;the polarization of the t(2g) orbitals. This slight rearrangement of the;d occupation also leads to a relative phase stability of VO2 ( including;structural and magnetic phases) that agrees well with experiment.;Zhang, Wenqing/K-1236-2012; Zhang, Peihong/D-2787-2012;4;0;0;0;4;1098-0121;WOS:000311806300003;;;J;Campi, Davide;Bernasconi, Marco;Benedek, Giorgio;Electronic properties and lattice dynamics of the As(111) surface;PHYSICAL REVIEW B;86;24;245403;10.1103/PhysRevB.86.245403;DEC 3 2012;2012;The bulk and surface electronic and structural properties of As(111);have been studied with first-principles methods. The inclusion of;spin-orbit interaction reveals that As shares the same topologically;nontrivial order of the bulk electronic bands of Sb which gives rise to;two spin-polarized surface states connecting valence-like and;conduction-like states. Bulk and surface phonons have been calculated by;means of density functional perturbation theory. The surface phonon;bands reveal features related to a remarkable stiffening of the surface;bilayer with respect to the bulk ones similarly to what is measured for;the Bi(111) and to what is expected for the Sb(111) surface.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000311806500003;;;J;Chakraborty, Akash;Wenk, Paul;Bouzerar, Richard;Bouzerar, Georges;
10:472:10 Understanding of ferromagnetism in thiol capped Mn doped CdS nanocrystals
DOI:10.1063/1.4820258 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Ghosh, Anirudha;Paul, Sanhita;Raj, Satyabrata;
10:472:11 High temperature ferromagnetism in cubic Mn-doped ZrO2 thin films
DOI:10.1016/j.jmmm.2012.04.047 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Nguyen Hoa Hong;Park, Chul-Kwon;Raghavender, A. T.;Ruyter, Antoine;Chikoidze, Ekaterina;Dumont, Yves;
10:472:12 Hafnium oxide thin films studied by time differential perturbed angular correlations
DOI:10.1063/1.3592245 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Dey, C. C.;Dey, S.;Bedi, S. C.;Das, S. K.;Lorenz, M.;Grundmann, M.;Vogt, J.;Butz, T.;
10:473:1 Polychromatic ZnO/CdxZn1-xO composite nanorods prepared by simple chemical methods: nanoscale optical characteristics
DOI:10.1364/OME.4.001987 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Kim, Min Su;Lee, Jubok;Kim, Jeongyong;
10:473:2 Optical properties of sputtered hexagonal CdZnO films with band gap energies from 1.8 to 3.3 eV
DOI:10.1016/j.jallcom.2011.03.101 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:17 AU: Ma, Xiangyang;Chen, Peiliang;Zhang, Ruijie;Yang, Deren;
10:473:3 Fermi level stabilization and band edge energies in CdxZn1-xO alloys
DOI:10.1063/1.4884683 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:3 AU: Detert, Douglas M.;Tom, Kyle B.;Battaglia, Corsin;Denlinger, Jonathan D.;Lim, Sunnie H. N.;Javey, Ali;Anders, Andre;Dubon, Oscar D.;Yu, Kin M.;Walukiewicz, Wladek;
10:473:4 Photoluminescent properties of Cd (x) Zn1-x O thin films prepared by sol-gel spin-coating method
DOI:10.1007/s13391-013-0047-8 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:4 AU: Park, Hyunggil;Nam, Giwoong;Yoon, Hyunsik;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young;
10:473:5 Electronic structure of ternary CdxZn1-xO (0 <= x <= 0.075) alloys
DOI:10.1063/1.3684251 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Lai, Henry Hung-Chun;Kuznetsov, Vladimir L.;Egdell, Russell G.;Edwards, Peter P.;
10:473:6 Electrically pumped wavelength-tunable blue random lasing from CdZnO films on silicon
DOI:10.1063/1.4725486 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Tian, Ye;Ma, Xiangyang;Jin, Lu;Li, Dongsheng;Yang, Deren;
10:473:7 Realization of 479 nm (2.59 eV) emission CdZnO nanorods and the application on solar cells
DOI:10.1016/j.matlet.2012.06.098 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Chu, Sheng;Wang, Guoping;
10:473:8 Study on the Structural and Optical Properties of Cd1-xZnxO Layers Enhanced by Rapid Thermal Annealing
DOI:10.1007/s13391-011-0907-z JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:4 AU: Yu, J. H.;Kim, J. H.;Jeong, T. S.;Akhtar, M. Shaheer;Youn, C. J.;Hong, K. J.;
10:473:9 Hexagonal structured Zn(1-x)CdxO solid solution thin films: synthesis, characterization and applications in photoelectrochemical water splitting
DOI:10.1039/c3ta10558j JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:7 AU: Mansoor, Muhammad Adil;Ehsan, Muhammad Ali;McKee, Vickie;Huang, Nay-Ming;Ebadi, Mehdi;Arifin, Zainudin;Basirun, Wan Jeffrey;Mazhar, Muhammad;
10:474:1 Shape-Dependent Antibacterial Activities of Ag2O Polyhedral Particles
DOI:10.1021/la9028172 JN:LANGMUIR PY:2010
TC:66 AU: Wang, Xin;Wu, Hui-Fang;Kuang, Qin;Huang, Rong-Bin;Xie, Zhao-Xiong;Zheng, Lan-Sun;
10:474:2 Monitoring the formation of inorganic fullerene-like MoS2 nanostructures by laser ablation in liquid environments
DOI:10.1016/j.apsusc.2012.02.053 JN:APPLIED SURFACE SCIENCE PY:2012
TC:13 AU: Compagnini, Giuseppe;Sinatra, Marco G.;Messina, Gabriele C.;Patane, Giacomo;Scalese, Silvia;Puglisi, Orazio;
10:474:3 Plasma-assisted speedy synthesis of mesporous Ag2O nanotube
DOI:10.1016/j.matlet2014.04.023 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Li, Yonghe;Zhang, Yuefei;Fu, Haoyu;Wang, Zhenyu;Li, Xiaodong;
10:474:4 Effective Electrocatalysis Based on Ag2O Nanowire Arrays Supported on a Copper Substrate
DOI:10.1021/am4016523 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Ji, Rong;Wang, Lingling;Yu, Liutao;Geng, Baoyou;Wang, Guangfeng;Zhang, Xiaojun;
10:474:5 Generation of Ag2O Micro-/Nanostructures by Pulsed Excimer Laser Ablation of Ag in Aqueous Solutions of Polysorbate 80
DOI:10.1021/la104331p JN:LANGMUIR PY:2011
TC:15 AU: Yan, Zijie;Bao, Ruqiang;Chrisey, Douglas B.;
10:474:6 Hydrothermal synthesis and magnetic properties of CoS2 nano-octahedrons
DOI:10.1016/j.matlet.2011.05.064 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Liu, Bo;Wang, Fangfang;Zheng, Dafang;Liu, Xianchun;Sun, Xiujuan;Hou, Suying;Xing, Yan;
10:474:7 Photoluminescence of reactively sputtered Ag2O films
DOI:10.1016/j.tsf.2013.04.026 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Lund, Esben;Galeckas, Augustinas;Azarov, Alexander;Monakhov, Edouard V.;Svensson, Bengt G.;
10:475:1 Tailored defect-induced sharp excitonic emission from microcrystalline CuI and its ab initio validation
DOI:10.1039/c4tc00955j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:3 AU: Das, Swati;Saha, Subhajit;Sen, Dipayan;Ghorai, Uttam Kumar;Chattopadhyay, Kalyan Kumar;
10:475:2 A facile, green, one pot synthesis of cuprous iodide nanoparticles using the mechanochemical method
DOI:10.1016/j.matlet.2013.10.072 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Shahbazi, Saeed;Afshar, Shahrara;
10:475:3 Mechanism of band-edge luminescence in cuprous iodide single crystals
DOI:10.1016/j.jallcom.2014.07.202 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Gao, Pan;Gu, Mu;Liu, Xi;Liu, Bo;Zheng, Yan-Qing;Shi, Er-Wei;Shi, Jun-Yan;Zhang, Guo-bin;
10:475:4 Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method
DOI:10.1016/j.apsusc.2010.01.058 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Dhere, Sunetra L.;Latthe, Sanjay S.;Kappenstein, Charles;Mukherjee, S. K.;Rao, A. Venkateswara;
10:475:5 Preparation of CuI particles and their applications in carbon nanotube-Si heterojunction solar cells
DOI:10.1016/j.matlet.2012.03.114 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Wang, Hongguang;Bai, Xi;Wei, Jinquan;Li, Peixu;Jia, Yi;Zhu, Hongwei;Wang, Kunlin;Wu, Dehai;
10:475:6 Ambient synthesis and optoelectronic properties of copper iodide semiconductor nanoparticles
DOI:10.1016/j.jallcom.2012.12.120 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:4 AU: Sharma, Bindu;Rabinal, M. K.;
10:475:7 A study on mechanochemical behavior of CaO-P2O5-CaF2-ZrO2 system to produce fluorapatite-zirconia composite nanopowders
DOI:10.1016/j.powtec.2013.03.034 JN:POWDER TECHNOLOGY PY:2013
TC:4 AU: Nasiri-Tabrizi, Bahman;Fahami, Abbas;Ebrahimi-Kahrizsangi, Reza;Khazraei, Armin;Yazdani, Mohammad Reza;Kajbafzadeh, Mohammad Javad;
10:475:8 Large single crystal growth and characterization of CuX (X=Cl, Br) by temperature reduction method
DOI:10.1016/j.jcrysgro.2014.05.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:1 AU: Lv, Yangyang;Xu, Zhihuang;Ye, Liwang;Su, Genbo;Zhuang, Xinxin;
10:475:9 7-Cul crystal growth in ionic liquids by the oxygen-free cooling method
DOI:10.1016/j.jcrysgro.2013.11.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Lou, Bingqian;Zhang, Jingfu;Luo, Hong;Pan, Jingen;Pan, Jianguo;
10:475:10 Fabrication, characterization and optical property of CuI nanospheres
DOI:10.1016/j.matlet.2011.03.016 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Xu, Yanyan;Yang, Shuang;Zhang, Guoying;Sun, Yaqiu;Gao, Dongzhao;Sun, Yuxiu;
10:475:11 The rapid growth of large-scale KDP single crystal in brief procedure
DOI:10.1016/j.jcrysgro.2010.11.019 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:11 AU: Zhuang Xinxin;Ye Liwang;Zheng Guozong;Su Genbo;He Youpin;Lin Xiuqin;Xu Zhihuang;
10:475:12 Colloidal synthesis of uniform CuI nanoparticles and their size dependent optical properties
DOI:10.1016/j.matlet.2013.02.082 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Ma, Yongsheng;Gu, Mu;Huang, Shiming;Liu, Xiaolin;Liu, Bo;Ni, Chen;
10:475:13 Crystal growth and characterization of CuI single crystals by solvent evaporation technique
DOI:10.1016/j.materresbull.2010.01.005 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:14 AU: Gu, Mu;Gao, Pan;Liu, Xiao-Lin;Huang, Shi-Ming;Liu, Bo;Ni, Chen;Xu, Rong-Kun;Ning, Jia-min;
10:476:1 Synthesis of Cu2O crystals with negative surface curvature at various positions via Al3+ ions inducing
DOI:10.1016/j.matlet.2013.12.013 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Yang, Renchun;Wu, Zhichun;Tang, Dingxing;Xing, Yuanyuan;Ren, Yiming;Li, Fang;Li, Xingyang;
10:476:2 Synthesis and characterization of p-Cu2O nanowires arrays
DOI:10.1016/j.matlet.2012.11.012 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Grez, P.;Herrera, F.;Riveros, G.;Henriquez, R.;Ramirez, A.;Munoz, E.;Dalchiele, E. A.;Celedon, C.;Schrebler, R.;
10:476:3 Room temperature additive-free synthesis of uniform Cu2O nanocubes with tunable size from 20 nm to 500 nm and photocatalytic property
DOI:10.1016/j.matlet.2013.09.102 JN:MATERIALS LETTERS PY:2014
TC:9 AU: Cao, Yanyan;Xu, Yanyan;Hao, Hongying;Zhang, Guoying;
10:476:4 Template-free non-aqueous electrochemical growth of CdO nanorods
DOI:10.1016/j.tsf.2011.06.030 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Henriquez, R.;Grez, P.;Munoz, E.;Dalchiele, E. A.;Marotti, R. E.;Gomez, H.;
10:476:5 Morphology-dependent antibacterial activities of Cu2O
DOI:10.1016/j.matlet.2010.12.023 JN:MATERIALS LETTERS PY:2011
TC:16 AU: Lee, Yong-Jung;Kim, Sunghyen;Park, Seong-Hun;Park, Heonyong;Huh, Young-Duk;
10:476:6 Ultrasound-assisted synthesis of sea urchin-like Cu2O architectures
DOI:10.1016/j.matlet.2013.07.046 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Mao, Bao-Guang;Chu, De-Qing;Wang, Li-Min;Wang, Ao-Xuan;Wen, Ying-Jie;Yang, Xiao-Zhong;
10:476:7 Synthesis and study of the photoluminescence and optical characteristics of Cd/CdO nanorods prepared by the electrospinning process
DOI:10.1016/j.matlet.2011.08.074 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Barakat, Nasser A. M.;Al-Deyab, Salem;Kim, Hak Yong;
10:476:8 In situ synthesis and characterization of Cu2O nanowire networks from CuSCN films
DOI:10.1016/j.matlet.2014.04.151 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Xiao, Xingxing;Xia, Peng;Ji, Xin;Xu, Wei;
10:476:9 Preparation of novel layer-stack hexagonal CdO micro-rods by a pre-oxidation and subsequent evaporation process
DOI:10.1016/j.materresbull.2014.09.009 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Peng, Kun;Jiang, Pan;Zhu, Jiajun;Zhou, Lingping;Li, Deyi;
10:476:10 Facile hydrothermal synthesis of novel Cu2O core-shell nanospheres via a template-free route
DOI:10.1016/j.matlet.2012.06.021 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Cui, Yuchi;Zhang, Huijuan;Wong, C. Cheong;
10:477:1 Local piezoelectric properties of ZnO thin films prepared by RF-plasma-assisted pulsed-laser deposition method
DOI:10.1088/0957-4484/21/23/235703 JN:NANOTECHNOLOGY PY:2010
TC:17 AU: Bdikin, I. K.;Gracio, J.;Ayouchi, R.;Schwarz, R.;Kholkin, A. L.;
10:477:2 Large-Scale Nano Piezo Force Position Arrays as Ultrahigh-Resolution Micro- and Nanoparticle Tracker
DOI:10.1002/adfm.201201201 JN:ADVANCED FUNCTIONAL MATERIALS PY:2013
TC:5 AU: Subannajui, Kittitat;Menzel, Andreas;Gueder, Firat;Yang, Yang;Schumann, Katrin;Lu, Xiaoli;Zacharias, Margit;
10:477:3 Atomic Layer Deposition on Phase-Shift Lithography Generated Photoresist Patterns for 1D Nanochannel Fabrication
DOI:10.1021/am100592f JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:10 AU: Gueder, Firat;Yang, Yang;Krueger, Michael;Stevens, Gregory B.;Zacharias, Margit;
10:477:4 Superior Functionality by Design: Selective Ozone Sensing Realized by Rationally Constructed High-Index ZnO Surfaces
DOI:10.1002/smll.201200841 JN:SMALL PY:2012
TC:5 AU: Gueder, Firat;Yang, Yang;Menzel, Andreas;Wang, Chunyu;Danhof, Julia;Subannajui, Kittitat;Hartel, Andreas;Hiller, Daniel;Kozhummal, Rajeevan;Ramgir, Niranjan S.;Cimalla, Volker;Schwarz, Ulrich T.;Zacharias, Margit;
10:477:5 Toward Discrete Multilayered Composite Structures: Do Hollow Networks Form in a Polycrystalline Infinite Nanoplane by the Kirkendall Effect?
DOI:10.1021/cm201446y JN:CHEMISTRY OF MATERIALS PY:2011
TC:7 AU: Gueder, Firat;Yang, Yang;Goetze, Silvana;Berger, Andreas;Scholz, Roland;Hiller, Daniel;Hesse, Dietrich;Zacharias, Margit;
10:477:6 Correlation between polarity distribution and piezoelectric response of solution-deposited Zn1-xLixO films
DOI:10.1063/1.3665636 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Nagase, Toshimi;Kamohara, Toshihiro;Nishikubo, Keiko;Fukamachi, Satoru;Shobu, Kazuhisa;Akiyama, Morito;
10:477:7 Surface structure and anion effects in the oxidation of ethanol on platinum nanoparticles
DOI:10.1039/c3ta10996h JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:8 AU: Buso-Rogero, Carlos;Grozovski, Vitali;Vidal-Iglesias, Francisco J.;Solla-Gullon, Jose;Herrero, Enrique;Feliu, Juan M.;
10:477:8 Structure and morphology of polar and semi-polar pyramidal surfaces coating wurtzite ZnO micro-wires
DOI:10.1007/s10853-013-7187-y JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Tang, Dinghao;Allard, Lawrence F.;Boley, Allison;Smith, David J.;Liu, Jingyue;
10:477:9 Significantly Enhancing Catalytic Activity of Tetrahexahedral Pt Nanocrystals by Bi Adatom Decoration
DOI:10.1021/ja2042029 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2011
TC:41 AU: Chen, Qing-Song;Zhou, Zhi-You;Vidal-Iglesias, Francisco J.;Solla-Gullon, Jose;Feliu, Juan M.;Sun, Shi-Gang;
10:477:10 Foam fractionation of ZnO crystal growth and its photocatalysis of the degradation of methylene blue
DOI:10.1557/jmr.2012.179 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:0 AU: Atla, Shashi Bairagi;Chen, Chien-Yen;Chen, Chien-Cheng;Shih, Shao-Ju;Lin, Pin-Yun;Chung, Pei-Hua;Yang, Jheng-Sian;Reddy, Akuri Satyanarayana;Cheng, Kai-Chien;Chang, Young-Fo;
10:477:11 Local Piezoelectricity and Polarity Distribution of Preferred c-Axis-Oriented ZnO Film Investigated by Piezoresponse Force Microscopy
DOI:10.1007/s11664-010-1415-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:2 AU: Li, Cui Ping;Yang, Bao He;
10:478:1 Synthesis of zinc oxide nanotetrapods by a novel fast microemulsion-based hydrothermal method
DOI:10.1016/j.matlet.2010.07.026 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Jiang, Junying;Li, Yanfen;Tan, Shengwei;Huang, Zaiyin;
10:478:2 Urea-Based Synthesis of Zinc Oxide Nanostructures at Low Temperature
DOI:10.1155/2012/427172 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Marinho, J. Z.;Romeiro, F. C.;Lemos, S. C. S.;Motta, F. V.;Riccardi, C. S.;Li, M. S.;Longo, E.;Lima, R. C.;
10:478:3 Synthesis and characterization of dense and fine nickel ferrite ceramics through two-step sintering
DOI:10.1016/j.ceramint.2011.12.044 JN:CERAMICS INTERNATIONAL PY:2012
TC:2 AU: Zhang, Zhigang;Liu, Yihan;Yao, Guangchun;Zu, Guoyin;Wu, Di;Hao, Yi;
10:478:4 Effect of pH Values on the Morphology of Zinc Oxide Nanostructures and their Photoluminescence Spectra
DOI:10.1111/j.1551-2916.2010.04146.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:9 AU: Wu, Wan-Yu;Kung, Wen-Yen;Ting, Jyh-Ming;
10:478:5 Analysis of growth parameters for hydrothermal synthesis of ZnO nanoparticles through a statistical experimental design method
DOI:10.1007/s10853-010-4576-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:6 AU: Hu, Shao-Hwa;Chen, Yi-Chuan;Hwang, Chyi-Ching;Peng, Cheng-Hsiung;Gong, Dah-Chuan;
10:478:6 Flash synthesis of flower-like ZnO nanostructures by microwave-induced combustion process
DOI:10.1016/j.matlet.2010.09.072 JN:MATERIALS LETTERS PY:2011
TC:18 AU: Cao, Yuan;Liu, Bolin;Huang, Rui;Xia, Zhining;Ge, Song;
10:478:7 On the study of pH effects in the microwave enhanced rapid synthesis of nano-ZnO
DOI:10.1007/s00339-009-5496-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:11 AU: Ram, S. D. Gopal;Kulandainathan, M. Anbu;Ravi, G.;
10:478:8 Electron irradiation effect and photoluminescence properties of ZnO-tetrapod nanostructures
DOI:10.1016/j.matchemphys.2009.11.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:10 AU: Ahmad, Mashkoor;Pan, Caofeng;Zhao, Jiong;Iqbal, Javed;Zhu, Jing;
10:478:9 Microwave sintering of nano-sized ZnO synthesized by a liquid route
DOI:10.1016/j.powtec.2010.08.053 JN:POWDER TECHNOLOGY PY:2011
TC:6 AU: Savary, E.;Marinel, S.;Colder, H.;Harnois, C.;Lefevre, F. X.;Retoux, R.;
10:478:10 Effect of source temperature on the morphology and photoluminescence properties of ZnO nanostructures
DOI:10.1016/j.apsusc.2010.03.101 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: Al-Azri, Khalifa;Nor, Roslan Md;Amin, Y. M.;Al-Ruqeishi, Majid. S.;
10:478:11 Green route biosynthesis: Characterization and catalytic activity of ZnO nanoparticles
DOI:10.1016/j.matlet.2013.06.095 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Nagajyothi, P. C.;An, T. N. Minh;Sreekanth, T. V. M.;Lee, Jae-il;Lee, Dong Joo;Lee, K. D.;
10:478:12 Synthesis of dumbbell shaped ZnO crystals using one-pot hydrothermal method and their characterisations
DOI:10.1016/j.matlet.2014.02.021 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Ramu, P.;Anbarasan, P. M.;Ramesh, R.;Aravindan, S.;Ponnusamy, S.;Muthamizhchelvan, C.;Yaakob, Z.;
10:479:1 New Insights into the Mechanism of ZnO Formation from Aqueous Solutions of Zinc Acetate and Zinc Nitrate
DOI:10.1021/cm501096p JN:CHEMISTRY OF MATERIALS PY:2014
TC:8 AU: Liang, Mei-Keat;Limo, Marion J.;Sola-Rabada, Anna;Roe, Martin J.;Perry, Carole C.;
10:479:2 Study on the structural and physical properties of ZnO nanowire arrays grown via electrochemical and hydrothermal depositions
DOI:10.1063/1.3657843 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Laurent, K.;Brouri, T.;Capo-Chichi, M.;Yu, D. P.;Leprince-Wang, Y.;
10:479:3 Temperature stress on pristine ZnO nanowire field effect transistor
DOI:10.1063/1.3567795 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Kim, Kyoungwon;Debnath, Pulak Chandra;Kim, Sangsig;Lee, Sang Yeol;
10:479:4 Growth mechanism studies of ZnO nanowire arrays via hydrothermal method
DOI:10.1007/s00339-013-7908-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Chevalier-Cesar, Clotaire;Capochichi-Gnambodoe, Martine;Leprince-Wang, Yamin;
10:479:5 Evolution of the zinc compound nanostructures in zinc acetate single-source solution
DOI:10.1007/s11051-011-0504-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:19 AU: Wang, Ying;Li, Yinhua;Zhou, Zhengzhi;Zu, Xihong;Deng, Yulin;
10:479:6 Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire
DOI:10.1063/1.3327826 JN:APPLIED PHYSICS LETTERS PY:2010
TC:18 AU: Kim, Kyoungwon;Debnath, Pulak Chandra;Park, Dong-Hoon;Kim, Sangsig;Lee, Sang Yeol;
10:479:7 ZnO nanorod composite with quenched photoactivity for UV protection application
DOI:10.1016/j.matlet.2014.01.103 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Yin, Hong;Casey, Philip S.;
10:479:8 First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
DOI:10.1016/j.tsf.2013.02.033 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Chong, Eugene;Kang, Iljoon;Park, Chul Hong;Lee, Sang Yeol;
10:480:1 Metal-Free Doping Process to Enhance the Conductivity of Zinc Oxide Nanorods Retaining the Transparency
DOI:10.1021/am300348g JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:4 AU: Panigrahi, Shrabani;Sarkar, Sanjit;Basak, Durga;
10:480:2 Influence of S doping on structural, optical and visible light photocatalytic activity of ZnO thin films
DOI:10.1016/j.ceramint.2014.06.062 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Poongodi, G.;Kumar, R. Mohan;Jayavel, R.;
10:480:3 Synthesis of zinc oxide nanoparticles with strong, tunable and stable visible light emission by solid-state transformation of Zn(II)-organic coordination polymers
DOI:10.1039/c1jm10809c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:31 AU: Shi, Hong-Yan;Deng, Bin;Zhong, Sheng-Liang;Wang, Lei;Xu, An-Wu;
10:480:4 Photoluminescence and Raman analysis of novel ZnO tetrapod and multipod nanostructures
DOI:10.1016/j.apsusc.2010.04.094 JN:APPLIED SURFACE SCIENCE PY:2010
TC:21 AU: Peng, Zhiwei;Dai, Guozhang;Zhou, Weichang;Chen, Peng;Wan, Qiang;Zhang, Qinglin;Zou, Bingsuo;
10:480:5 Structural and optical properties of the S-doped ZnO particles synthesized by hydrothermal method
DOI:10.1016/j.apsusc.2010.08.041 JN:APPLIED SURFACE SCIENCE PY:2010
TC:9 AU: Sun, Yuanping;He, Tao;Guo, Hongying;Zhang, Tao;Wang, Weitian;Dai, Zhenhong;
10:480:6 Spatial-resolved cathode luminescence study of S-doped ZnO particles for the luminescence of UV, green and orange band emission
DOI:10.1016/j.apsusc.2013.06.096 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Sun, Yuanping;Guo, Hongying;Jiang, Feihong;Yuan, Run;Zhang, Jun;Zeng, Xionghui;Zhou, Taofei;Qiu, Yongxin;Zhang, Baoshun;Xu, Ke;Yang, Hui;
10:480:7 Cation-exchange process in an anionic metal-organic framework: New precursors for facile fabrication of ZnO nanostructures
DOI:10.1016/j.matlet.2014.08.116 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Cheng, Bao;Karizi, Farnoosh Zare;Hu, Mao-Lin;Morsali, Ali;
10:481:1 Highly transparent conductive F-doped ZnO films in wide range of visible and near infrared wavelength deposited on polycarbonate substrates
DOI:10.1016/j.jallcom.2014.06.098 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Zhang, Xiangyu;Zhu, Liping;Xu, Hongbin;Chen, Linxiang;Guo, Yanmin;Ye, Zhizhen;
10:481:2 Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering
DOI:10.1016/j.solmat.2010.03.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:15 AU: Gong, Li;Lu, Jianguo;Ye, Zhizhen;
10:481:3 Effect of substrate temperature on the structural, electrical, and optical properties of GZO/ZnO films deposited by radio frequency magnetron sputtering
DOI:10.1016/j.ceramint.2013.11.127 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Kim, Sun-Kyung;Kim, Seung-Hong;Kim, So-Young;Jeon, Jae-Hyun;Gong, Tae-Kyung;Choi, Dong-Hyuk;Son, Dong-Il;Kim, Daeil;
10:481:4 High intense violet luminescence in fluorine doped zinc oxide (FZO) thin films deposited by aerosol assisted CVD
DOI:10.1016/j.jallcom.2013.05.073 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:7 AU: Anusha, Muthukumar;Arivuoli, Dakshnamoorthy;
10:481:5 Nitrogen doping in pulsed laser deposited ZnO thin films using dense plasma focus
DOI:10.1016/j.apsusc.2010.09.038 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Karamat, S.;Rawat, R. S.;Tan, T. L.;Lee, P.;Springham, V.;Ghareshabani, E.;Chen, R.;Sun, H. D.;
10:481:6 Chemical spray pyrolysis deposited fluorine-doped zinc oxide thin films: Effect of acetic acid content in the starting solution on the physical properties
DOI:10.1016/j.mssp.2011.06.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Castaneda, L.;Maldonado, A.;Rodriguez-Baez, J.;Cheang-Wong, J. C.;Lopez-Fuentes, M.;Olvera, M. de la L.;
10:481:7 Textured surface ZnO:B/(hydrogenated gallium-doped ZnO) and (hydrogenated gallium-doped ZnO)/ZnO:B transparent conductive oxide layers for Si-based thin film solar cells
DOI:10.1016/j.tsf.2011.10.203 JN:THIN SOLID FILMS PY:2012
TC:5 AU: Yan, Cong-bo;Chen, Xin-liang;Wang, Fei;Sun, Jian;Zhang, De-kun;Wei, Chang-chun;Zhang, Xiao-dan;Zhao, Ying;Geng, Xin-hua;
10:481:8 Influence of deposition parameters and annealing treatment on the properties of GZO films grown using rf magnetron sputtering
DOI:10.1016/j.ceramint.2011.08.031 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Huang, C. H.;Chen, D. Y.;Hsu, C. Y.;
10:481:9 Structure, microstructure and optical properties of Sn-doped ZnO thin films
DOI:10.1016/j.jallcom.2014.01.024 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:8 AU: Chahmat, N.;Souier, T.;Mokri, A.;Bououdina, M.;Aida, M. S.;Ghers, M.;
10:481:10 InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer
DOI:10.1016/j.jcrysgro.2011.01.085 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Kong, Bo Hyun;Cho, Hyung Koun;Kim, Mi Yang;Choi, Rak Jun;Kim, Bae Kyun;
10:482:1:1 Design and laser fabrication of controllable non-Gaussian roughness surfaces at microscale
DOI:10.1016/j.apsusc.2013.03.040 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Luo, Tingting;Liu, Xiaoning;Chen, Yuhang;Huang, Wenhao;Liu, Zhe;
10:482:1:2 Laser assisted fabrication of random rough surfaces for optoelectronics
DOI:10.1016/j.apsusc.2011.10.137 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Brissonneau, V.;Escoubas, L.;Flory, F.;Berginc, G.;Maire, G.;Giovannini, H.;
10:482:1:3 Numerical generation of anisotropic 3D non-Gaussian engineering surfaces with specified 3D surface roughness parameters
DOI:10.1016/j.wear.2010.02.005 JN:WEAR PY:2010
TC:16 AU: Manesh, K. K.;Ramamoorthy, B.;Singaperumal, M.;
10:482:1:4 Generation of 3D random topography datasets with periodic boundaries for surface metrology algorithms and measurement standards
DOI:10.1016/j.wear.2010.04.035 JN:WEAR PY:2011
TC:9 AU: Uchidate, M.;Yanagi, K.;Yoshida, I.;Shimizu, T.;Iwabuchi, A.;
10:482:1:5 Rough surface scattering simulations using graphics cards
DOI:10.1016/j.apsusc.2010.03.028 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Klapetek, Petr;Valtr, Miroslav;Poruba, Ales;Necas, David;Ohlidal, Miloslav;
10:482:2:1 Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application
DOI:10.1016/j.apsusc.2011.03.029 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Luo, Xinze;Xu, Lin;Xu, Bingbing;Li, Fengyan;
10:482:2:2 Molecular Dynamics of Film Formation of Metal Tetrasulfonated Phthalocyanine and Poly Amidoamine Dendrimers
DOI:10.1155/2013/816285 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Silva, L. G.;Neto, A. M. J. C.;Gaffo, L.;Borges, R. S.;Ramalho, Teodorico C.;Machado, Nelio;
10:482:2:3 Structural and morphological study of ZnO thin films electrodeposited on n-type silicon
DOI:10.1016/j.apsusc.2010.05.087 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Ahmed, N. Ait;Fortas, G.;Hammache, H.;Sam, S.;Keffous, A.;Manseri, A.;Guerbous, L.;Gabouze, N.;
10:482:2:4 Electrical Properties of Zn-Phthalocyanine and Poly (3-hexylthiophene) Doped Nematic Liquid Crystal
DOI:10.1155/2011/729085 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:2 AU: Karakus, Y.;Okutan, M.;Kosemen, A.;San, S. E.;Alpaslan, Z.;Demir, A.;
10:482:3:1 Electrical characterization of cobalt phthalocyanine/n-Si heterojunction
DOI:10.1016/j.synthmet2014.10.007 JN:SYNTHETIC METALS PY:2014
TC:4 AU: Wahab, Fazal;Sayyad, M. Hassan;Tahir, Muhammad;Khan, Dil Nawaz;Aziz, Fakhra;Shahid, Muhammad;Munawar, Munawar Ali;Chaudry, Jamil Anwar;Khan, Gulzar;
10:482:3:2 Electrical characterization of cobalt phthalocyanine/p-silicon heterojunction
DOI:10.1016/j.mssp.2014.04.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Wahab, Fazal;Sayyad, M. H.;Khan, Dil Nawaz;Tahir, Muhammad;Aziz, Fakhra;Shahid, Muhammad;Munawar, Munawar Ali;Chaudry, Jamil Anwar;
10:482:3:3 Photovoltaic performance analysis of organic device based on PTCDA/n-Si heterojunction
DOI:10.1016/j.synthmet.2011.05.038 JN:SYNTHETIC METALS PY:2011
TC:12 AU: Farag, A. A. M.;Osiris, W. G.;Yahia, I. S.;
10:482:4:1 Multifractal Characterization of Water Soluble Copper Phthalocyanine Based Films Surfaces
DOI:10.1007/s13391-013-3270-4 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:8 AU: Talu, Stefan;Stach, Sebastian;Mahajan, Aman;Pathak, Dinesh;Wagner, Tomas;Kumar, Anshul;Bedi, R. K.;Talu, Mihai;
10:482:4:2 Modeling of the rough spherical nanoparticles manipulation on a substrate based on the AFM nanorobot
DOI:10.1007/s00339-014-8668-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Zakeri, M.;Faraji, J.;
10:482:4:3 Dynamic modeling of manipulation of micro/nanoparticles on rough surfaces
DOI:10.1016/j.apsusc.2011.02.055 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Korayem, M. H.;Zakeri, M.;
10:483:1 Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol-gel method
DOI:10.1016/j.jallcom.2013.04.089 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:9 AU: Baqiah, H.;Ibrahim, N. B.;Abdi, M. H.;Halim, S. A.;
10:483:2 Electrical properties of nano-sized indium tin oxide (ITO) doped with CuO, Cr2O3 and ZrO2
DOI:10.1007/s11051-014-2518-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Abbas, H. A.;Youssef, A. M.;Hammad, F. F.;Hassan, A. M. A.;Hanafi, Z. M.;
10:483:3 Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light
DOI:10.1016/j.materresbull.2014.02.023 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Zhang, Yan;Yu, Jianqiang;Sun, Kai;Zhu, Yukun;Bu, Yuyu;Chen, Zhuoyuan;
10:483:4 Structural and opto-electrical properties of the tin-doped indium oxide thin films fabricated by the wet chemical method with different indium starting materials
DOI:10.1016/j.tsf.2011.02.004 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Ting, Chu-Chi;Cheng, Wei-Lun;Lin, Guang-Chun;
10:483:5 Electrical and optical properties of ITO and ITO/Cr-doped ITO films
DOI:10.1007/s00339-010-5988-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:7 AU: Caricato, A. P.;Cesaria, M.;Luches, A.;Martino, M.;Maruccio, G.;Valerini, D.;Catalano, M.;Cola, A.;Manera, M. G.;Lomascolo, M.;Taurino, A.;Rella, R.;
10:483:6 Laser direct patterning of the T-shaped ITO electrode for high-efficiency alternative current plasma display panels
DOI:10.1016/j.apsusc.2010.07.063 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Li, Zhao-Hui;Cho, Eou Sik;Kwon, Sang Jik;
10:483:7 Effects of Zr dopant and sintering temperature on electrical properties of In2O3-SrO based ceramics
DOI:10.1016/j.ceramint.2014.03.096 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Bondarchuk, A. N.;Aguilar-Martinez, J. A.;Pech-Canul, M. I.;
10:483:8 The Physical Properties of Erbium-Doped Yttrium Iron Garnet Films Prepared by Sol-Gel Method
DOI:10.1155/2012/524903 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:4 AU: Shaiboub, Ramadan;Ibrahim, Noor Baa'yah;Abdullah, Mustafa;Abdulhade, Ftema;
10:483:9 Synthesis of sol-gel based nanostructured Cr(III)-doped indium tin oxide films on glass and their optical and magnetic characterizations
DOI:10.1016/j.optmat.2012.12.005 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Kundu, Susmita;Das, Nilanjana;Chakraborty, Sriparna;Bhattacharya, Dipten;Biswas, Prasanta Kumar;
10:483:10 Electrical and ferromagnetic properties of Tb-doped indium-tin oxide films fabricated by sol-gel method
DOI:10.1016/j.apsusc.2010.03.111 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Zuo, Yalu;Ge, Shihui;Yu, Zhenhua;Yan, Shiming;Zhou, Xueyun;Zhang, Li;
10:483:11 Current limiting and negative differential resistance in indium oxide based ceramics
DOI:10.1016/j.jeurceramsoc.2009.06.033 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:6 AU: Glot, A. B.;Mazurik, S. V.;Jones, B. J.;Bondarchuk, A. N.;Bulpett, R.;Verma, N.;
10:483:12 Effects of Annealing Temperature on Structure and Magnetic Properties of TbxY3-xFe5O12 (x=0.2 and 0.4) Thin Films
DOI:10.1155/2012/154192 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Ibrahim, N. B.;Aldbea, FtemaW.;Abdullah, Andmustaffa Hj;
10:484:1 Dense electronic excitation induced modification in TiO2 doped SnO2 nanocomposite films
DOI:10.1016/j.jallcom.2014.04.182 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Jaiswal, Manoj Kumar;Kumar, Rajesh;Kanjilal, D.;
10:484:2 Room temperature ferromagnetic multilayer thin film based on indium oxide and iron oxide for transparent spintronic applications
DOI:10.1016/j.matlet.2010.06.026 JN:MATERIALS LETTERS PY:2010
TC:17 AU: Gupta, R. K.;Ghosh, K.;Kahol, P. K.;
10:484:3 Structure and magnetic properties of Sn1-xMnxO2
DOI:10.1016/j.jmmm.2011.07.056 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:8 AU: Hakeem, A. M. Abdel;
10:484:4 Room temperature ferromagnetism behavior of Sn1-xMnxO2 powders
DOI:10.1016/j.jmmm.2011.09.025 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:7 AU: Ahmed, S. A.;Mohamed, S. H.;
10:484:5 Study of magnetic state of Sn0.9Fe0.1O2 powders at low temperature
DOI:10.1016/j.jmmm.2013.05.059 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:2 AU: Bilovol, V.;Cabrera, A. F.;Rodriguez Torres, C. E.;Mudarra Navarro, A. M.;
10:484:6 Transparent, conducting, and ferromagnetic multilayer films based on ZnO/Fe3O4 by pulsed laser deposition technique
DOI:10.1016/j.matlet.2010.03.069 JN:MATERIALS LETTERS PY:2010
TC:3 AU: Gupta, R. K.;Ghosh, K.;Kahol, P. K.;
10:484:7 Exchange bias of Co/CoO multilayers deposited on nanosphere array
DOI:10.1007/s00339-012-6892-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Yang, J. H.;Yang, S. Y.;Wei, M. B.;Wang, Y. X.;Zhang, Y. J.;Yang, N. N.;Li, J.;Liu, S. S.;Li, W.;Wu, X. T.;
10:484:8 Novel structural and magnetic properties of Mg doped copper nanoferrites prepared by conventional and wet methods
DOI:10.1016/j.jmmm.2012.02.025 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:9 AU: Ahmed, M. A.;Afify, H. H.;El Zawawia, I. K.;Azab, A. A.;
10:484:9 Vertical exchange bias effects in multilayer thin films based on iron oxide and chromium oxide
DOI:10.1016/j.matlet.2011.05.049 JN:MATERIALS LETTERS PY:2011
TC:2 AU: Gupta, R. K.;Ghosh, K.;Kahol, P. K.;
10:484:10 Structural and magnetic properties of epitaxial SnFe2O4 thin films
DOI:10.1016/j.matlet.2011.04.059 JN:MATERIALS LETTERS PY:2011
TC:1 AU: Gupta, R. K.;Ghosh, K.;Kahol, P. K.;
10:484:11 Room temperature ferromagnetism behaviour of Sn1-xMnxO2 powders (vol 324, pg 812, 2012)
DOI:10.1016/j.jmmm.2011.12.016 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:0 AU: Ahmed, S. A.;Mohamed, S. H.;
10:485:1 High-quality ZnO nanorods grown on graphite substrates by chemical solution method
DOI:10.1007/s00339-012-7504-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Zhang, ZhiKun;Zhang, Yuzhi;Bian, Jiming;Sun, Jingchang;Qin, Fuwen;Wang, Yuxin;Li, Mengke;Zhang, Dong;Luo, Yingmin;
10:485:2 ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance high-power devices
DOI:10.1063/1.4742150 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Zhang, ZhiKun;Bian, Jiming;Sun, Jingchang;Ju, Zhenhe;Wang, Yuxin;Qin, Fuwen;Zhang, Dong;Luo, Yingmin;Liu, Hongzhu;
10:485:3 Use of laser lift-off for flexible device applications
DOI:10.1063/1.3511716 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Lee, Choong Hee;Kim, Sang Jin;Oh, Yongsoo;Kim, Mi Yang;Yoon, Yeo-Joo;Lee, Hwan-Soo;
10:485:4 Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates
DOI:10.1116/1.3605298 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Kang, T. S.;Lo, C. F.;Liu, L.;Finch, R.;Ren, F.;Wang, X. T.;Douglas, E.;Pearton, S. J.;Hung, S. T.;Chang, C. -J.;
10:485:5 High optical quality ZnO films grown on graphite substrate for transferable optoelectronics devices by ultrasonic spray pyrolysis
DOI:10.1016/j.materresbull.2012.05.010 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:4 AU: Zhang, ZhiKun;Bian, Jiming;Sun, Jingchang;Ma, Xiaowen;Wang, Yuxin;Cheng, Chuanhui;Luo, Yingmin;Liu, Hongzhu;
10:485:6 Synthesis of SiO2/beta-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition
DOI:10.1063/1.4833255 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Zhang, Zhikun;Bian, Jiming;Bi, Kaifeng;Liu, Yanhong;Zhang, Dong;Qin, Fuwen;Liu, Hongzhu;Miao, Lihua;
10:485:7 GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors
DOI:10.1116/1.4739769 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2012
TC:3 AU: Jung, Younghun;Kim, Sung Hyun;Kim, Jihyun;Wang, Xiaotie;Ren, Fan;Choi, Kyoung Jin;Pearton, Stephen J.;
10:485:8 Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.3664283 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:1 AU: Kang, T. S.;Wang, X. T.;Lo, C. F.;Ren, F.;Pearton, S. J.;Laboutin, O.;Cao, Yu;Johnson, J. W.;Kim, Jihyun;
10:485:9 Ultra-low threshold optically pumped random laser emission behavior of highly oriented pyrolytic graphite
DOI:10.1016/j.matlet.2013.10.045 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Zhang, Zhikun;Bian, Jiming;Zhang, Yuzhi;Zhang, Junfeng;Qin, Fuwen;Luo, Yingmin;
10:485:10 Emission enhancement from nonpolar a-plane III-nitride nanopillar
DOI:10.1116/1.3545696 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:3 AU: Kim, Byung-Jae;Jung, Younghun;Mastro, Michael A.;Hite, Jennifer;Nepal, Neeraj;Eddy, Charles R., Jr.;Kim, Jihyun;
10:485:11 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors
DOI:10.1116/1.4751278 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Wang, Xiaotie;Lo, Chien-Fong;Liu, Lu;Cuervo, Camilo V.;Fan, Ren;Pearton, Stephen J.;Gila, Brent;Johnson, Michael R.;Zhou, Lin;Smith, David J.;Kim, Jihyun;Laboutin, Oleg;Cao, Yu;Johnson, Jerry W.;
10:486:1 Preparation and characterization of Mg-doped ZnO thin films by sol-gel method
DOI:10.1016/j.apsusc.2011.12.011 JN:APPLIED SURFACE SCIENCE PY:2012
TC:28 AU: Huang, Kai;Tang, Zhen;Zhang, Li;Yu, Jiangyin;Lv, Jianguo;Liu, Xiansong;Liu, Feng;
10:486:2 Possibility of room-temperature multiferroism in Mg-doped ZnO
DOI:10.1007/s00339-013-7664-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:9 AU: Kumar, Parmod;Kumar, Yogesh;Malik, Hitendra K.;Annapoorni, S.;Gautam, Sanjeev;Chae, Keun Hwa;Asokan, K.;
10:486:3 Red luminescent and structural properties of Mg-doped ZnO phosphors prepared by sol-gel method
DOI:10.1016/j.mseb.2012.03.045 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:12 AU: Shi, Qiang;Zhang, Junying;Zhang, Dong;Wang, Changzheng;Yang, Bing;Zhang, Bingyuan;Wang, Wenjun;
10:486:4 Vertical ZnO nanorod array as an effective hydrogen gas sensor
DOI:10.1016/j.ceramint.2012.06.035 JN:CERAMICS INTERNATIONAL PY:2013
TC:17 AU: Lim, Y. T.;Son, J. Y.;Rhee, J. -S.;
10:486:5 Influence of thickness of MgO overlayer on the properties of ZnO thin films prepared on c-plane sapphire for H-2 sensing
DOI:10.1016/j.ceramint.2013.06.075 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Vijayalakshmi, K.;Karthick, K.;Raj, P. Deepak;Sridharan, M.;
10:486:6 Effect of Mg Doping on Optical Properties of ZnO Films by Ultrasonic Spray Pyrolysis
DOI:10.1080/10584587.2014.907078 JN:INTEGRATED FERROELECTRICS PY:2014
TC:1 AU: Thonglem, Sutatip;Sirisoonthorn, Somnuk;Pengpat, Kamonpan;Rujijanagul, Gobwute;Tunkasiri, Tawee;Intatha, Uraiwan;Eitssayeam, Sukum;
10:486:7 Dielectric study on Zn1-xMgxO ceramic materials prepared by the solid-state route
DOI:10.1007/s00339-014-8587-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Othman, Zayani Jaafar;Matoussi, Adel;Rossi, Francesca;Salviati, Giancarlo;
10:486:8 Au nanoparticle modified flower-like ZnO structures with their enhanced properties for gas sensing
DOI:10.1016/j.mssp.2014.01.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Tian, Fengshou;Liu, Yanli;Guo, Kunkun;
10:487:1 Structural, Optical, and Improved Field-Emission Properties of Tetrapod-Shaped Sn-Doped ZnO Nanostructures Synthesized via Thermal Evaporation
DOI:10.1021/am4026246 JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:10 AU: Zhou, Xiongtu;Lin, Tihang;Liu, Yuhui;Wu, Chaoxing;Zeng, Xiangyao;Jiang, Dong;Zhang, Yong-ai;Guo, Tailiang;
10:487:2 Long lifetime of free excitons in ZnO tetrapod structures
DOI:10.1063/1.3328099 JN:APPLIED PHYSICS LETTERS PY:2010
TC:17 AU: Lee, S. -K.;Chen, S. L.;Hongxing, D.;Sun, L.;Chen, Z.;Chen, W. M.;Buyanova, I. A.;
10:487:3 On the origin of suppression of free exciton no-phonon emission in ZnO tetrapods
DOI:10.1063/1.3292027 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Chen, S. L.;Lee, S. K.;Chen, W. M.;Dong, H. X.;Sun, L.;Chen, Z. H.;Buyanova, I. A.;
10:487:4 Effects of P implantation and post-implantation annealing on defect formation in ZnO
DOI:10.1063/1.3687919 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Wang, X. J.;Chen, W. M.;Ren, F.;Pearton, S.;Buyanova, I. A.;
10:487:5 Cathodoluminescence characterization of ZnO tetrapod structures
DOI:10.1016/j.tsf.2013.02.106 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Lee, S-K.;Chen, W. M.;Hongxing, D.;Chen, Z.;Buyanova, I. A.;
10:487:6 Correlation of quantum efficiency and photoluminescence lifetime of ZnO tetrapods grown at different temperatures
DOI:10.1063/1.4737785 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Tam, M. C.;Ng, A. M. C.;Djurisic, A. B.;Wong, K. S.;
10:487:7 Investigation of tailored planar defects arising from ZnO tetrapods doped with In2O3
DOI:10.1016/j.matlet.2014.01.153 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Yu, Lingmin;Fan, Xinhui;Lei, Man;Wei, Jiansong;Jin, Yao-Hua;Yan, Wen;
10:487:8 Correlation of quantum efficiency and photoluminescence lifetime of ZnO tetrapods grown at different temperatures (vol 112, 023515, 2012)
DOI:10.1063/1.4751269 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Tam, M. C.;Ng, A. M. C.;Djurisic, A. B.;Wong, K. S.;
10:488:1 Growth and electron field emission of ZnO nanorods on diamond films
DOI:10.1016/j.apsusc.2011.08.060 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Sang, Dandan;Li, Hongdong;Cheng, Shaoheng;
10:488:2 Ultrahydrophobicity of ZnO modified CVD diamond films
DOI:10.1016/j.apsusc.2012.12.172 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Yang, YiZhou;Wang, ChuanXi;Li, HongDong;Lin, Quan;
10:488:3 Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films
DOI:10.1016/j.jcrysgro.2010.03.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:22 AU: Li, Hongdong;Zhang, Tong;Li, Liuan;Lue, Xianyi;Li, Bo;Jin, Zengsun;Zou, Guangtian;
10:488:4 Epitaxial growth of ZnO nanorods on diamond and negative differential resistance of n-ZnO nanorod/p-diamond heterojunction
DOI:10.1016/j.apsusc.2013.04.126 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Li, Hongdong;Sang, Dandan;Cheng, Shaoheng;Lu, Jing;Zhai, Xiuhua;Chen, Lixue;Pei, Xiao-qiang;
10:488:5 Electrical transport behavior of n-ZnO nanorods/p-diamond heterojunction device at higher temperatures
DOI:10.1063/1.4745039 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Sang, D. D.;Li, H. D.;Cheng, S. H.;Wang, Q. L.;Yu, Q.;Yang, Y. Z.;
10:488:6 Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films
DOI:10.1016/j.apsusc.2009.09.109 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Li, Liuan;Li, Hongdong;Lue, Xianyi;Cheng, Shaoheng;Wang, Qiliang;Ren, Shiyuan;Liu, Junwei;Zou, Guangtian;
10:488:7 Anisotropic Wet Etched Silicon Substrates for Reoriented and Selective Growth of ZnO Nanowires and Enhanced Hydrophobicity
DOI:10.1021/la201157m JN:LANGMUIR PY:2011
TC:5 AU: Li, Sisi;Hu, Jie;Li, Junjun;Tian, Jinghua;Han, Zhitao;Zhou, Xiongtu;Chen, Yong;
10:488:8 Anodic oxidation of anthraquinone dye Alizarin Red S at Ti/BDD electrodes
DOI:10.1016/j.apsusc.2011.02.099 JN:APPLIED SURFACE SCIENCE PY:2011
TC:21 AU: Sun, Jianrui;Lu, Haiyan;Du, Lili;Lin, Haibo;Li, Hongdong;
10:488:9 Effects of Boron Doping on the Properties of Ultrananocrystalline Diamond Films
DOI:10.1007/s11664-014-3062-0 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Yuan, Wen-Xiang;WU, Q. X.;Luo, Z. K.;Wu, H. S.;
10:489:1 Sol-gel synthesis of SnO2-MgO nanoparticles and their photocatalytic activity towards methylene blue degradation
DOI:10.1016/j.materresbull.2013.05.092 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:3 AU: Bayal, Nisha;Jeevanandam, P.;
10:489:2 CuSn(OH)(6) submicrospheres: Room-temperature synthesis, growth mechanism, and weak antiferromagnetic behavior
DOI:10.1016/j.materresbull.2011.08.053 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:4 AU: Zhong, Sheng-Liang;Xu, Rong;Wang, Lei;Li, Yuan;Zhang, Lin-Fei;
10:489:3 Quantum confinement effects and band gap engineering of SnO2 nanocrystals in a MgO matrix
DOI:10.1016/j.actamat.2011.11.012 JN:ACTA MATERIALIA PY:2012
TC:14 AU: Sahana, M. B.;Sudakar, C.;Dixit, A.;Thakur, J. S.;Naik, R.;Naik, V. M.;
10:489:4 Reverse microemulsion synthesis and characterization of CaSnO3 nanoparticles
DOI:10.1016/j.ceramint.2014.02.037 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Shojaei, Shandokht;Hassanzadeh-Tabrizi, S. A.;Ghashang, M.;
10:489:5 CuSn(OH)(6) submicrospheres: Room-temperature synthesis and weak antiferromagnetic behavior
DOI:10.1016/j.matlet.2010.11.061 JN:MATERIALS LETTERS PY:2011
TC:3 AU: Xu, Rong;Deng, Bin;Min, Lu;Xu, Huifen;Zhong, Shengliang;
10:489:6 Quantification of MgO surface excess on the SnO2 nanoparticles and relationship with nanostability and growth
DOI:10.1016/j.apsusc.2010.12.023 JN:APPLIED SURFACE SCIENCE PY:2011
TC:10 AU: Gouvea, Douglas;Pereira, Gilberto J.;Gengembre, Leon;Steil, Marlu C.;Roussel, Pascal;Rubbens, Annick;Hidalgo, Pilar;Castro, Ricardo H. R.;
10:489:7 Chirality-enriched semiconducting carbon nanotubes synthesized on high surface area MgO-supported catalyst
DOI:10.1016/j.matlet.2011.03.040 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Xu, Yang;Dervishi, Enkeleda;Biris, Alexandru R.;Biris, Alexandru S.;
10:489:8 Fabrication of flexible SWCNT thin films through electrohydrodynamic atomization technique and investigation of their electrical properties
DOI:10.1016/j.matlet.2013.10.088 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Sundharam, Sridharan;Choi, Kyung-Hyun;
10:489:9 Fast sonochemical synthesis of CoSn(OH)(6) nanocubes, conversion towards shape-preserved SnO2-Co3O4 hybrids and their photodegradation properties
DOI:10.1016/j.matlet.2012.08.111 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Cheng, Pandi;Ni, Yonghong;Yuan, Kefeng;Hong, Jianming;
10:489:10 Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique
DOI:10.1016/j.materresbull.2013.04.059 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:0 AU: Murali, K. V.;Ragina, A. J.;Preetha, K. C.;Deepa, K.;Remadevi, T. L.;
10:489:11 Synthesis of SrSnO3 thin films by pulsed laser deposition deposition temperature
DOI:10.1016/j.tsf.2010.07.092 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Alves, M. C. F.;Boursicot, S.;Ollivier, S.;Bouquet, V.;Deputier, S.;Perrin, A.;Weber, I. T.;Souza, A. G.;Santos, I. M. G.;Guilloux-Viry, M.;
10:489:12 Quantification of MgO surface excess on the SnO2 nanoparticles and relationship with nanostability and growth (vol 257, pg 4219, 2011)
DOI:10.1016/j.apsusc.2014.05.017 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Gouvea, Douglas;Pereira, Gilberto J.;Gengembre, Leon;Steil, Marlu C.;Roussel, Pascal;Rubbens, Annick;Hidalgo, Pilar;Castro, Ricardo H. R.;
10:490:1:1 Surface and catalytic properties of doped tin oxide nanoparticles
DOI:10.1016/j.apsusc.2010.06.048 JN:APPLIED SURFACE SCIENCE PY:2010
TC:9 AU: Wang, Chien-Tsung;Lai, De-Lun;Chen, Miao-Ting;
10:490:1:2 Vanadium-Tin Oxide Nanoparticles with Gas-Sensing and Catalytic Activity
DOI:10.1111/j.1551-2916.2011.04733.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:1 AU: Wang, Chien-Tsung;Chen, Miao-Ting;Lai, De-Lun;
10:490:1:3 Surface characterization and reactivity of vanadium-tin oxide nanoparticles
DOI:10.1016/j.apsusc.2011.01.031 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Wang, Chien-Tsung;Chen, Miao-Ting;Lai, De-Lun;
10:490:1:4 A Rapidly Responding Sensor for Methanol Based on Electrospun In2O3-SnO2 Nanofibers
DOI:10.1111/j.1551-2916.2009.03354.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:11 AU: Zheng, Wei;Lu, Xiaofeng;Wang, Wei;Dong, Bo;Zhang, Hongnan;Wang, Zhaojie;Xu, Xiuru;Wang, Ce;
10:490:2:1 Investigation of Change in Surface Area and Grain Size of Cadmium Titanate Nanofibers upon Annealing and Their Effect on Oxygen Sensing
DOI:10.1021/am500354a JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:2 AU: Imran, Z.;Batool, S. S.;Rafiq, M. A.;Rasool, Kamran;Ahmad, Mushtaq;Shahid, R. N.;Hasan, M. M.;
10:490:2:2 Titania-Based Miniature Potentiometric Carbon Monoxide Gas Sensors with High Sensitivity
DOI:10.1111/j.1551-2916.2009.03446.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:10 AU: Park, Jun-Young;Azad, Abdul-Majeed;Song, Sun-Ju;Wachsman, Eric D.;
10:490:2:3 Electrospun La0.8Sr0.2MnO3 nanofibers for a high-temperature electrochemical carbon monoxide sensor
DOI:10.1088/0957-4484/23/30/305501 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Zhi, Mingjia;Koneru, Anveeksh;Yang, Feng;Manivannan, Ayyakkannu;Li, Jing;Wu, Nianqiang;
10:490:3:1 Phase transformation and morphological evolution of electrospun zirconia nanofibers during thermal annealing
DOI:10.1016/j.ceramint.2009.09.030 JN:CERAMICS INTERNATIONAL PY:2010
TC:20 AU: Li, Luping;Zhang, Peigen;Liang, Jiandong;Guo, S. M.;
10:490:3:2 The Influences of Excess Sodium on Low-Temperature NaSICON Synthesis
DOI:10.1111/jace.13167 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:0 AU: Bell, Nelson S.;Edney, Cynthia;Wheeler, Jill S.;Ingersoll, David;Spoerke, Erik D.;
10:490:3:3 Morphological evolution of NiO-ScSZ composite in a high-temperature reducing atmosphere
DOI:10.1016/j.jeurceramsoc.2011.07.033 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:0 AU: Puengjinda, Pramote;Muroyama, Hiroki;Matsui, Toshiaki;Kawano, Mitsunobu;Inagaki, Toru;Eguchi, Koichi;
10:490:4:1 C-11-radiolabeling study of methanol decomposition on copper oxide modified mesoporous SBA-15 silica
DOI:10.1016/j.apsusc.2011.02.098 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Tsoncheva, Tanya;Sarkadi-Priboczki, Eva;
10:490:4:2 Nanostructured copper, chromium, and tin oxide multicomponent materials as catalysts for methanol decomposition: C-11-radiolabeling study
DOI:10.1016/j.jcis.2012.09.011 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:3 AU: Tsoncheva, Tanya;Sarkadi-Priboczki, Eva;Dimitrova, Momtchil;Genova, Izabela;
10:490:4:3 C-11-radiolabeling study of nickel modified H-MCM-41 with methanol as a probe molecule
DOI:10.1007/s10853-010-4518-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:3 AU: Sarkadi-Priboczki, E.;Tsoncheva, T.;Kumar, N.;Murzin, D. Yu.;
10:490:5:1 Ferromagnetic behaviour of vanadium doped SnO2 nanoparticles annealed at different temperatures
DOI:10.1016/j.jallcom.2013.12.189 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Popa, A.;Toloman, D.;Raita, O.;Stan, M.;Pana, O.;Silipas, T. D.;Giurgiu, L. M.;
10:490:5:2 Luminescent properties of vanadium-doped SnO2 nanoparticles
DOI:10.1016/j.optmat.2014.05.032 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Toloman, D.;Popa, A.;Raita, O.;Stan, M.;Suciu, R.;Miclaus, M. O.;Biris, A. R.;
10:491:1 Synthesis of ZnO nanoparticles by an aerosol process
DOI:10.1016/j.ceramint.2013.12.044 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Ozcelik, Beril K.;Ergun, Celaletdin;
10:491:2 A study on the photoluminescence properties of electrospray deposited amorphous and crystalline nanostructured ZnO thin films
DOI:10.1016/j.ceramint.2011.10.031 JN:CERAMICS INTERNATIONAL PY:2012
TC:9 AU: Hosseinmardi, A.;Shojaee, N.;Keyanpour-Rad, M.;Ebadzadeh, T.;
10:491:3 Low temperature dielectric studies of zinc oxide (ZnO) nanoparticles prepared by precipitation method
DOI:10.1016/j.apt.2012.08.005 JN:ADVANCED POWDER TECHNOLOGY PY:2013
TC:21 AU: Lanje, Amrut S.;Sharma, Satish J.;Ningthoujam, Raghumani S.;Ahn, J. -S.;Pode, Ramchandra B.;
10:491:4 ZnO nanoparticles produced by novel reactive physical deposition process
DOI:10.1016/j.apsusc.2010.12.001 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Thangadurai, P.;Zergioti, I.;Saranu, S.;Chandrinou, C.;Yang, Z.;Tsoukalas, D.;Kean, A.;Boukos, N.;
10:491:5 Copper oxide nanoparticle made by flame spray pyrolysis for photoelectrochemical water splitting - Part I. CuO nanoparticle preparation
DOI:10.1016/j.ijhydene.2011.10.033 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2012
TC:9 AU: Chiang, Chia-Ying;Aroh, Kosi;Ehrman, Sheryl H.;
10:491:6 Natural convection of nanofluids in enclosures with low aspect ratios
DOI:10.1016/j.ijhydene.2014.04.069 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:2 AU: Bouhalleb, Mefteh;Abbassi, Hassan;
10:491:7 Microstructural investigation of ZnO films grown on (111) Si substrates by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.jcrysgro.2010.01.048 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Yang, Sang Mo;Han, Seok Kyu;Lee, Jae Wook;Kim, Jung-Hyun;Kim, Jae Goo;Hong, Soon-Ku;Lee, Jeong Yong;Song, Jung-Hoon;Hong, Sun Ig;Park, Jin Sub;Yao, Takafumi;
10:491:8 Spray roasting of iron chloride FeCl2: laboratory scale experiments and a model for numerical simulation
DOI:10.1016/j.powtec.2012.05.037 JN:POWDER TECHNOLOGY PY:2012
TC:4 AU: Schiemann, Martin;Wirtz, Siegmar;Scherer, Viktor;Baerhold, Frank;
10:491:9 The preparation of nano size nickel oxide powder by spray pyrolysis process
DOI:10.1016/j.powtec.2012.11.031 JN:POWDER TECHNOLOGY PY:2013
TC:2 AU: Yu, Jaekeun;Kim, Donghee;
10:491:10 Spray roasting of iron chloride FeCl2: Numerical modelling of industrial scale reactors
DOI:10.1016/j.powtec.2013.04.034 JN:POWDER TECHNOLOGY PY:2013
TC:2 AU: Schiemann, Martin;Wirtz, Siegmar;Scherer, Viktor;Baerhold, Frank;
10:492:1 Relevance of annealing on the stoichiometry and morphology of transparent thin films
DOI:10.1016/j.apsusc.2014.02.063 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Prepelita, P.;Craciun, V.;Sbarcea, G.;Garoi, F.;
10:492:2 Nanostructured hydrophobic DC sputtered inorganic oxide coating for outdoor glass insulators
DOI:10.1016/j.apsusc.2013.12.153 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Dave, V.;Gupta, H. O.;Chandra, R.;
10:492:3 Annealing effect on CdS/SnO2 films grown by chemical bath deposition
DOI:10.1016/j.apsusc.2010.03.063 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Metin, H.;Erat, S.;Durmus, S.;Ari, M.;
10:492:4 F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition
DOI:10.1016/j.tsf.2011.07.025 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Kim, H.;Auyeung, R. C. Y.;Pique, A.;
10:492:5 Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering
DOI:10.1016/j.apsusc.2012.02.030 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Houng, Boen;Wang, Adam;
10:492:6 Aluminum-doped zinc oxide (ZnO:Al) thin films deposited on glass substrates by chemical spray starting from zinc pentanedionate and aluminum chloride
DOI:10.1016/j.mseb.2010.03.074 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:9 AU: Olvera, M. de la L.;Maldonado, A.;Vega-Perez, J.;Solorza-Feria, O.;
10:492:7 Electrical, optical, and structural properties of thin films with tri-layers of AZO/ZnMgO/AZO grown by filtered vacuum arc deposition
DOI:10.1016/j.mseb.2012.09.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:3 AU: Gontijo, Leonardo C.;Cunha, Alfredo G.;Nascente, Pedro A. P.;
10:492:8 Phase transition in sputtered HfO2 thin films: A qualitative Raman study
DOI:10.1016/j.apsusc.2012.08.088 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Belo, G. S.;Nakagomi, F.;Minko, A.;da Silva, S. W.;Morais, P. C.;Buchanan, D. A.;
10:492:9 X-ray absorption near-edge spectroscopy investigation of the oxidation state of Pd species in nanoporous SnO2 gas sensors for methane detection
DOI:10.1016/j.tsf.2011.04.187 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Wagner, Th;Bauer, M.;Sauerwald, T.;Kohl, C. -D.;Tiemann, M.;
10:493:1 Combinatorial characterization of transparent conductive properties of Ga-doped ZnO films cosputtered from electron cyclotron resonance and rf magnetron plasma sources
DOI:10.1116/1.3328053 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:14 AU: Akazawa, Housei;
10:493:2 Degradation of transparent conductive properties of undoped ZnO and Ga-doped ZnO films left in atmospheric ambient for several years and trials to recover initial conductance
DOI:10.1116/1.4866233 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Akazawa, Housei;
10:493:3 DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction
DOI:10.1016/j.tsf.2009.09.176 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Aoi, Takafumi;Oka, Nobuto;Sato, Yasushi;Hayashi, Ryo;Kumomi, Hideya;Shigesato, Yuzo;
10:493:4 Modification of transparent conductive ZnO and Ga-doped ZnO films by irradiation with electron cyclotron resonance argon plasma
DOI:10.1116/1.3571603 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:4 AU: Akazawa, Housei;
10:493:5 Thermal stability of carrier centers in various types of transparent conductive ZnO and Ga-doped ZnO films
DOI:10.1016/j.tsf.2011.09.078 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Akazawa, Housei;
10:493:6 Concentration effect of H/OH and Eu3+ species on activating photoluminescence from ZnO:Eu3+ thin films
DOI:10.1063/1.4825121 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Akazawa, Housei;Shinojima, Hiroyuki;
10:493:7 Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors
DOI:10.1116/1.4892777 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Akazawa, Housei;
10:493:8 Double layer structures of transparent conductive oxide suitable for solar cells: Ga-doped ZnO on undoped ZnO
DOI:10.1016/j.tsf.2012.10.111 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Akazawa, Housei;
10:493:9 Transmission/absorption measurements for in situ monitoring of transparent conducting Ga:ZnO films grown via aqueous methods
DOI:10.1039/c3ta12461d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:1 AU: Kevin, Moe;Ho, Ghim Wei;
10:493:10 Sputtering characteristics, crystal structures, and transparent conductive properties of TiOxNy films deposited on alpha-Al2O3(0001) and glass substrates
DOI:10.1016/j.apsusc.2012.09.049 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Akazawa, Housei;
10:493:11 Sub-gap absorption study of amorphous InGaZnO4 films by photothermal deflection spectroscopy
DOI:10.1016/j.jnoncrysol.2011.12.013 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Gotoh, Tamihiro;Kaneda, Kenji;
10:494:1 Electrical conduction mechanism in ZnS nanoparticles
DOI:10.1016/j.jallcom.2014.05.163 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Ali, Hassan;Karim, S.;Rafiq, M. A.;Maaz, K.;Rahman, Atta Ur;Nisar, A.;Ahmad, M.;
10:494:2 Synthesis and characterizations of flower-like ZnS and ZnS: Cu2+ nanostructures
DOI:10.1016/j.matlet.2014.05.103 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Jiang, Long;Sun, Yuyang;Chen, Huan;Luo, Jianyong;Zeng, Tian;Wei, Jin;Liu, Lin;Jin, Yong;Jiao, Zhifeng;Sun, Xiaosong;
10:494:3 Structural and photoluminescence properties of Eu-doped ZnS nanoparticles
DOI:10.1016/j.mssp.2013.07.039 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:10 AU: Lotey, Gurmeet Singh;Jindal, Zinki;Singhi, Vaishali;Verma, N. K.;
10:494:4 Fabrication and characterization of Cu-CdSe-Cu nanowire heterojunctions
DOI:10.1007/s11051-011-0526-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:17 AU: Lotey, Gurmeet Singh;Verma, N. K.;
10:494:5 Synthesis and optical properties of wurtzite ZnS nanorings
DOI:10.1016/j.matlet.2011.05.062 JN:MATERIALS LETTERS PY:2011
TC:9 AU: Chen, Xue;Lee, Chun-Sing;Meng, Xiang-Min;Zhang, Wen-Jun;
10:494:6 Solution-combustion: the versatile route to synthesize silver nanoparticles
DOI:10.1007/s11051-010-0148-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:7 AU: Sharma, Poonam;Lotey, Gurmeet Singh;Singh, Sukhpreet;Verma, N. K.;
10:494:7 The structure and room temperature ferromagnetism property of the ZnS:Cu2+ nanoparticles
DOI:10.1016/j.mssp.2013.01.022 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Wei, Maobin;Cao, Jian;Fu, Hao;Yang, Jinghai;Yan, Yongsheng;Yang, Lili;Wang, Dandan;Han, Donglai;Fan, Lin;Wang, Bingji;
10:494:8 A novel combustion method to prepare CuO nanorods and its antimicrobial and photocatalytic activities
DOI:10.1016/j.powtec.2012.11.045 JN:POWDER TECHNOLOGY PY:2013
TC:7 AU: Christy, A. Jegatha;Nehru, L. C.;Umadevi, M.;
10:494:9 Enhancement of electrical conductivity and dielectric constant in Sn-doped nanocrystlline CoFe2O4
DOI:10.1007/s11051-013-1703-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:2 AU: Rahman, Atta Ur;Rafiq, Muhammad Aftab;ul Hasan, Masood;Khan, Maaz;Karim, Shafqat;Cho, Sung Oh;
10:494:10 Role of Copper Oxides in Contact Killing of Bacteria
DOI:10.1021/1a404091z JN:LANGMUIR PY:2013
TC:16 AU: Hans, Michael;Erbe, Andreas;Mathews, Salima;Chen, Ying;Solioz, Marc;Muecklich, Frank;
10:494:11 Current-voltage and capacitance-voltage studies of nanocrystalline CdSe/Au Schottky junction interface
DOI:10.1007/s11051-009-9796-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:3 AU: Sarangi, S. N.;Adhikari, P. K.;Pandey, D.;Sahu, S. N.;
10:495:1 High-quality hexagonal ZnO crystals grown by chemical vapor deposition
DOI:10.1016/j.matlet.2010.12.027 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Li, Zhenjun;Hu, Zuofu;Liu, Fengjuan;Sun, Jian;Huang, Haiqin;Zhang, Xiqing;Wang, Yongsheng;
10:495:2 Hydrothermal synthesis and infrared emissivity property of flower- like SnO2 particles
DOI:10.1063/1.4873536 JN:AIP ADVANCES PY:2014
TC:0 AU: Tian, J. X.;Zhang, Z. Y.;Yan, J. F.;Ruan, X. F.;Yun, J. N.;Zhao, W.;Zhai, C. X.;
10:495:3 Facile synthesis of SnO2 nanograss array films by hydrothermal method
DOI:10.1016/j.tsf.2010.03.003 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Wang, Yali;Guo, Min;Zhang, Mei;Wang, Xidong;
10:495:4 Controlled growth of zinc oxide crystals with tunable shape
DOI:10.1016/j.jcrysgro.2010.01.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Huang, Aisheng;Caro, Juergen;
10:495:5 Preparation and infrared emissivities of self-assembled ZnO spherical aggregates
DOI:10.1016/j.mssp.2014.03.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Yang, Hui;Cai, Weiwei;Guo, Xingzhong;
10:495:6 Controlled synthesis of ZnO spheres using structure directing agents
DOI:10.1016/j.tsf.2013.01.105 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Foe, Kurniawan;Namkoong, Gon;Abdel-Fattah, Tarek M.;Baumgart, Helmut;Jeong, Mun Seok;Lee, Dong-Seon;
10:495:7 First-principles and experimental studies of the IR emissivity of Sn-doped ZnO
DOI:10.1016/j.mssp.2013.04.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Zhang, Shuyuan;Cao, Quanxi;
10:495:8 Lattice variation and Raman spectroscopy in hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts
DOI:10.1088/0957-4484/21/2/025704 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Cheng, Baochang;Jiao, Jin;Sun, Wei;Tian, Baixiang;Xiao, Yanhe;Lei, Shuijin;
10:495:9 Shape evolution of zinc oxide from twinned disks to single spindles through solvothermal synthesis in binary solvents
DOI:10.1016/j.jcrysgro.2010.07.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Huang, Aisheng;Caro, Juergen;
10:495:10 Effect of preparation techniques on infrared emissivities of Zn0.9Co0.1O powders
DOI:10.1016/j.mssp.2012.12.023 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Yao, Yinhua;Cao, Quanxi;
10:495:11 Localized Nanoscopic Surface Measurements of Nickel-Modified Mica for Single-Molecule DNA Sequence Sampling
DOI:10.1021/am100697z JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:5 AU: Hsueh, Carlin;Chen, Haijian;Gimzewski, James K.;Reed, Jason;Abdel-Fattah, Tarek M.;
10:496:1 Enhanced carrier collection in p-Ni-1 (-) O-x: Li/n-Si heterojunction solar cells using LiF/Al electrodes
DOI:10.1016/j.tsf.2014.11.025 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Hsu, Feng-Hao;Wang, Na-Fu;Tsai, Yu-Zen;Wu, Chung-Yi;Cheng, Yu-Song;Chien, Ming-Hao;Houng, Mau-Phon;
10:496:2 Structures and properties of the Al-doped ZnO thin films prepared by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2011.03.026 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Yue, Hongyun;Wu, Aimin;Feng, Yudong;Zhang, Xueyu;Li, Tingju;
10:496:3 Study of working pressure on the optoelectrical properties of Al-Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications
DOI:10.1016/j.apsusc.2013.04.103 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Hsu, Feng-Hao;Wang, Na-Fu;Tsai, Yu-Zen;Chuang, Ming-Chieh;Cheng, Yu-Song;Houng, Mau-Phon;
10:496:4 Investigation of defects in N-doped ZnO powders prepared by a facile solvothermal method and their UV photocatalytic properties
DOI:10.1016/j.materresbull.2013.08.034 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Gu, Pengfei;Wang, Xudong;Li, Tao;Meng, Huimin;
10:496:5 Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells
DOI:10.1016/j.mseb.2012.10.029 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:3 AU: Kim, Sunbo;Lee, Jaehyeong;Dao, Vinh Ai;Lee, Seungho;Balaji, Nagarajan;Ahn, Shihyun;Hussain, Shahzada Qamar;Han, Sangmyeong;Jung, Junhee;Jang, Juyeon;Lee, Yunjung;Yi, Junsin;
10:496:6 Modeling and optimization study of industrial n-type high-efficiency back-contact back-junction silicon solar cells
DOI:10.1016/j.solmat.2009.11.025 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:24 AU: Kluska, Sven;Granek, Filip;Ruediger, Marc;Hermle, Martin;Glunz, Stefan W.;
10:496:7 Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell
DOI:10.1016/j.solmat.2013.06.026 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:11 AU: Lee, Seung-Yoon;Choi, Hongsik;Li, Hongmei;Ji, Kwangsun;Nam, Seunghoon;Choi, Junghoon;Ahn, Seh-Won;Lee, Heon-Min;Park, Byungwoo;
10:496:8 A new phase and optical properties of the N-doped ZnO film
DOI:10.1016/j.materresbull.2010.06.008 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:6 AU: Zhao, Yue;Li, Zhao;Lv, Zhiyong;Liang, Xiaoyan;Min, Jiahua;Wang, Lingjun;Shi, Yin;
10:496:9 Surface recombination parameters of interdigitated-back-contact silicon solar cells obtained by modeling luminescence images
DOI:10.1016/j.solmat.2013.05.050 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:4 AU: Padilla, M.;Hoeffler, H.;Reichel, C.;Chu, H.;Greulich, J.;Rein, S.;Warta, W.;Hermle, M.;Schubert, M. C.;
10:496:10 The photoluminescence characterization of the N-doped ZnO films produced by wet chemical deposition
DOI:10.1007/s00339-012-6841-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Zhao, Yue;Peng, Xiang;Li, Zhao;Zhou, Mingtao;Liang, Xiaoyan;Wang, Jian;Min, Jiahua;Wang, Linjun;Shi, Weimin;
10:496:11 Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem
DOI:10.1063/1.3524506 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Reichel, C.;Granek, F.;Hermle, M.;Glunz, S. W.;
10:496:12 Transparent conducting Al and Y codoped ZnO thin film deposited by DC sputtering
DOI:10.1016/j.matchemphys.2010.04.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:10 AU: Tsai, Yu-Zen;Wang, Na-Fu;Tseng, Mei-Rurng;Hsu, Feng-Hao;
10:497:1 Magnesium, nitrogen codoped Cr2O3: A p-type transparent conducting oxide
DOI:10.1063/1.3638461 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Arca, E.;Fleischer, K.;Shvets, I. V.;
10:497:2 Influence of anode roughness and buffer layer nature on organic solar cells performance
DOI:10.1016/j.tsf.2010.06.009 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Dahou, F. Z.;Cattin, L.;Garnier, J.;Ouerfelli, J.;Morsli, M.;Louarn, G.;Bouteville, A.;Khellil, A.;Bernede, J. C.;
10:497:3 Misfit layered Ca3Co4O9 as a high figure of merit p-type transparent conducting oxide film through solution processing
DOI:10.1063/1.4871506 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Aksit, M.;Kolli, S. K.;Slauch, I. M.;Robinson, R. D.;
10:497:4 Epitaxial Bi2Sr2Co2Oy thin films as a promising p-type transparent conducting oxides
DOI:10.1364/OME.4.002209 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Wang, Shufang;Sun, Liqing;Zhang, Hongrui;Elhadj, Dogheche;Wang, Jianglong;Fu, Guangsheng;
10:497:5 Indium-doped molybdenum oxide as a new p-type transparent conductive oxide
DOI:10.1039/c0jm03815f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:11 AU: Chen, Han-Yi;Su, Huan-Chieh;Chen, Chia-Hsiang;Liu, Kuo-Liang;Tsai, Chung-Min;Yen, Shiang-Jie;Yew, Tri-Rung;
10:497:6 Redox Switching of Polyoxometalate-Methylene Blue-Based Layer-by-Layer Films
DOI:10.1021/la3004068 JN:LANGMUIR PY:2012
TC:13 AU: Anwar, Nargis;Vagin, Mikhail;Naseer, Rashda;Imar, Shahzad;Ibrahim, Masooma;Mal, Sib Sankar;Kortz, Ulrich;Laffir, Fathima;McCormac, Timothy;
10:497:7 Effect of substrate temperature on orientation of subphthalocyanine molecule in organic photovoltaic cells
DOI:10.1016/j.tsf.2011.09.062 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Chou, Chi-Ta;Tang, Wei-Li;Tai, Yian;Lin, Chien-Hung;Liu, Chin-Hsin J.;Chen, Li-Chyong;Chen, Kuei-Hsien;
10:498:1 ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
DOI:10.1063/1.3551628 JN:APPLIED PHYSICS LETTERS PY:2011
TC:37 AU: Wang, Guoping;Chu, Sheng;Zhan, Ning;Lin, Yuqing;Chernyak, Leonid;Liu, Jianlin;
10:498:2 Doping efficiency, optical and electrical properties of nitrogen-doped ZnO films
DOI:10.1063/1.3579454 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:24 AU: Liu, W. W.;Yao, B.;Zhang, Z. Z.;Li, Y. F.;Li, B. H.;Shan, C. X.;Zhang, J. Y.;Shen, D. Z.;Fan, X. W.;
10:498:3 Hydrogen influence on the electrical and optical properties of ZnO thin films grown under different atmospheres
DOI:10.1016/j.tsf.2013.12.057 JN:THIN SOLID FILMS PY:2014
TC:4 AU: Lorite, I.;Wasik, J.;Michalsky, T.;Schmidt-Grund, R.;Esquinazi, P.;
10:498:4 Self-assembly growth of ZnO-based axial and radial junctions via a two-step method
DOI:10.1016/j.apsusc.2012.10.096 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Chang, Yongqin;Lu, Yingdong;Wang, Mingwen;Long, Yi;Ye, Rongchang;
10:498:5 Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications
DOI:10.1088/0957-4484/24/39/395203 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Huang, Jian;Qi, Jing;Li, Zonglin;Liu, Jianlin;
10:498:6 Atom Probe Tomography of Zinc Oxide Nanowires
DOI:10.1007/s11664-011-1803-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:5 AU: Dawahre, Nabil;Shen, Gang;Balci, Soner;Baughman, William;Wilbert, David S.;Harris, Nick;Butler, Lee;Martens, Rich;Kim, Seongsin Margaret;Kung, Patrick;
10:498:7 Effect of annealing and hydrogen plasma treatment on the luminescence of hydrothermally grown bulk ZnO
DOI:10.1016/j.optmat.2011.12.015 JN:OPTICAL MATERIALS PY:2012
TC:4 AU: Dangbegnon, J. K.;Talla, K.;Botha, J. R.;
10:498:8 P-type behavior of Sb doped ZnO from p-n-p memory structure
DOI:10.1063/1.4769097 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Huang, Jian;Li, Zonglin;Chu, Sheng;Liu, Jianlin;
10:498:9 Bandgap-engineered CdxZn1-xO nanowires as active regions for green-light-emitting diodes
DOI:10.1088/0957-4484/25/35/355201 JN:NANOTECHNOLOGY PY:2014
TC:0 AU: Lai, Boya;Chen, Zuxin;Zhang, Junming;Chu, Sheng;Chu, Guang;Peng, Rufang;
10:499:1 ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection
DOI:10.1088/0957-4484/23/27/275602 JN:NANOTECHNOLOGY PY:2012
TC:14 AU: Vega, N. C.;Wallar, R.;Caram, J.;Grinblat, G.;Tirado, M.;LaPierre, R. R.;Comedi, D.;
10:499:2 Enhanced optical properties and (Zn, Mg) interdiffusion in vapour transport grown ZnO/MgO core/shell nanowires
DOI:10.1088/0957-4484/25/3/035705 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Grinblat, G.;Borrero-Gonzalez, L. J.;Nunes, L. A. O.;Tirado, M.;Comedi, D.;
10:499:3 Hierarchical ZnO nanostructures: Growth mechanisms and surface correlated photoluminescence
DOI:10.1063/1.4724195 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Grinblat, G.;Capeluto, M. G.;Tirado, M.;Bragas, A. V.;Comedi, D.;
10:499:4 Luminescence and electrical properties of single ZnO/MgO core/shell nanowires
DOI:10.1063/1.4868648 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Grinblat, Gustavo;Bern, Francis;Barzola-Quiquia, Jose;Tirado, Monica;Comedi, David;Esquinazi, Pablo;
10:499:5 Growth and great UV emission improvement of highly crystalline quality core-shell ZnO/MgO nanowires
DOI:10.1016/j.matlet.2012.06.081 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Wu, Y.;Wu, W.;Zou, X. M.;Xu, L.;Li, J. C.;
10:499:6 One-step vapor deposition of ZnO nanowires/MgO film composite structures
DOI:10.1016/j.matlet.2014.07.187 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Ryzhova, M. V.;Redkin, A. N.;Yakimov, E. E.;
10:499:7 Electrophoretic deposition of ZnO nanostructures: Au nanoclusters on Si substrates induce self-assembled nanowire growth
DOI:10.1016/j.mseb.2014.04.002 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:4 AU: Sandoval, Claudia;Marin, Oscar;Real, Silvina;Comedi, David;Tirado, Monica;
10:499:8 The effect of substrate surface roughness on ZnO nanostructures growth
DOI:10.1016/j.apsusc.2010.11.005 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Roozbehi, Maryam;Sangpour, Parvaneh;Khademi, Ali;Moshfegh, Alireza Z.;
10:499:9 Randomly oriented ZnO nanowires grown on amorphous SiO2 by metal-catalyzed vapour deposition
DOI:10.1016/j.jallcom.2009.10.070 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Comedi, D.;Tirado, M.;Zapata, C.;Heluani, S. P.;Villafuerte, M.;Mohseni, P. K.;LaPierre, R. R.;
10:500:1 Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes
DOI:10.1063/1.4823480 JN:AIP ADVANCES PY:2013
TC:9 AU: Kumar, Mohit;Kanjilal, Aloke;Som, Tapobrata;
10:500:2 Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content
DOI:10.1016/j.tsf.2011.10.066 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Lee, Kyeongmi;Nomura, Kenji;Yanagi, Hiroshi;Kamiya, Toshio;Hosono, Hideo;
10:500:3 Vertically arrayed Ga-doped ZnO nanorods grown by magnetron sputtering: The effect of Ga contents and microstructural evaluation
DOI:10.1016/j.jcrysgro.2011.06.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:13 AU: Kim, Young Yi;Kong, Bo Hyun;Cho, Hyung Koun;
10:500:4 Structural and optical properties of ZnO nanorods grown chemically on sputtered GaN buffer layers
DOI:10.1016/j.tsf.2013.10.152 JN:THIN SOLID FILMS PY:2014
TC:6 AU: Nandi, R.;Joshi, Pranav;Singh, Devendra;Mohanta, Pravanshu;Srinivasa, R. S.;Major, S. S.;
10:500:5 Photoluminescence study of ZnO structures grown by aqueous chemical growth
DOI:10.1016/j.tsf.2011.04.123 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Kenanakis, G.;Androulidaki, M.;Vernardou, D.;Katsarakis, N.;Koudoumas, E.;
10:500:6 Growth of ZnO nanorods on fluorine-doped tin oxide substrate without catalyst by radio-frequency magnetron sputtering
DOI:10.1016/j.tsf.2014.11.010 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Yang, Myung;Kim, Hong Chan;Hong, Seong-Hyeon;
10:500:7 Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias
DOI:10.1021/am500300g JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Wang, Dapeng;Hung, Mai Phi;Jiang, Jingxin;Toda, Tatsuya;Furuta, Mamoru;
10:500:8 A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering
DOI:10.1016/j.jallcom.2013.06.144 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: He, Bo;Wang, HongZhi;Li, YaoGang;Ma, ZhongQuan;Xu, Jing;Zhang, QingHong;Wang, ChunRui;Xing, HuaiZhong;Zhao, Lei;Rui, YiChuan;
10:500:9 Physical properties of InGaO3(ZnO)(m) with various content ratio grown by PAMBE
DOI:10.1016/j.jcrysgro.2015.02.054 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yang, Chu Shou;Huang, Shin Jung;Kao, Yu Chung;Chen, Guan He;Chou, Wu-Ching;
10:500:10 Thickness-controlled photoresponsivity of ZnO:Al/Si heterostructures: Role of junction barrier height
DOI:10.1016/j.matlet.2014.07.171 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Basu, Tanmoy;Kumar, Mohit;Som, Tapobrata;
10:500:11 Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN/Mg layer through a chemical bath deposition process
DOI:10.1016/j.tsf.2010.05.017 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Lin, Ming-Shiou;Chen, Chi-Chi;Wang, Wei-Cheng;Lin, Chia-Feng;Chang, Shou-Yi;
10:501:1 Biopolymer-assisted hydrothermal synthesis of SnO2 porous nanospheres and their photocatalytic properties
DOI:10.1016/j.ceramint.2014.05.078 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Ma, Lin;Zhou, Xiao-Ping;Xu, Li-Mei;Xu, Xu-Yao;Zhang, Ling-Ling;
10:501:2 Controllable construction of ordered porous SnO2 nanostructures and their application in photocatalysis
DOI:10.1016/j.matlet.2013.10.111 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Chen, Haitao;Zhang, Dan;Zhou, Xuming;Zhu, Jun;Chen, Xiaobing;Zeng, Xianghua;
10:501:3 Hybrid structure comprised of SnO2, ZnO and Cu2S thin film semiconductors with controlled optoelectric and photocatalytic properties
DOI:10.1016/j.tsf.2013.06.008 JN:THIN SOLID FILMS PY:2013
TC:8 AU: Enesca, Alexandru;Isac, Luminita;Duta, Anca;
10:501:4 Preparation, performances of PVDF/ZnO hybrid membranes and their applications in the removal of copper ions
DOI:10.1016/j.apsusc.2014.08.004 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Zhang, Xia;Wang, Yang;Liu, Yufeng;Xu, Junli;Han, Yide;Xu, Xinxin;
10:501:5 The influence of the additives composition and concentration on the properties of SnOx thin films used in photocatalysis
DOI:10.1016/j.matlet.2011.03.111 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Dudita, Mihaela;Bogatu, Cristina;Enesca, Alexandru;Duta, Anca;
10:501:6 Opto-electronic properties of SnO2 layers obtained by SPD and ECD techniques
DOI:10.1016/j.tsf.2010.07.008 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Enesca, Alexandru;Bogatu, Cristina;Voinea, Mihaela;Duta, Anca;
10:501:7 A novel method to synthesize ordered porous SnO2 nanostructures and their optical properties
DOI:10.1007/s00339-012-6860-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Chen, H. T.;Zhou, X. M.;Zhu, W. M.;Zhu, J.;Fan, L.;Chen, X. B.;
10:502:1 Role of heteroepitaxial misfit strains on the band offsets of Zn1-xBexO/ZnO quantum wells: A first-principles analysis
DOI:10.1063/1.4729079 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Dong, L.;Alpay, S. P.;
10:502:2 Synthesis of carbon nanotube/Ni nanocomposite film by electrophoresis and electroless deposition without Pd pretreatment
DOI:10.1016/j.tsf.2012.12.077 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Hakamada, Masataka;Moriguchi, Akitoshi;Matsumura, Satoshi;Mabuchi, Mamoru;
10:502:3 Electrochemical actuation of nanoporous Ni in NaOH solution
DOI:10.1016/j.matlet.2011.12.012 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Hakamada, Masataka;Matsumura, Satoshi;Mabuchi, Mamoru;
10:502:4 One-step synthesis of open-cell Ni foams by annealing the Ni2+-based precursor in air
DOI:10.1039/c2jm30548h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:4 AU: Gao, Daqiang;Yang, Guijin;Zhu, Zhonghua;Zhang, Jing;Yang, Zhaolong;Zhang, Zhipeng;Xue, Desheng;
10:502:5 Surface effects on saturation magnetization in nanoporous Ni
DOI:10.1080/14786430903571461 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:6 AU: Hakamada, Masataka;Takahashi, Masaki;Furukawa, Toshiyuki;Mabuchi, Mamoru;
10:502:6 Visible-light photocatalysis of ZnO deposited on nanoporous Au
DOI:10.1007/s00339-014-8299-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Hakamada, Masataka;Yuasa, Motohiro;Yoshida, Takashi;Hirashima, Fumi;Mabuchi, Mamoru;
10:502:7 Efficient electroless nickel plating from highly active Ni-B nanoparticles for electric circuit patterns on Al2O3 ceramics
DOI:10.1039/c3tc31048e JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:0 AU: Zhai, Teng;Lu, Xihong;Cui, Guofeng;Wu, Gang;Qu, Junxiong;Tong, Yexiang;
10:502:8 Large-strain-induced magnetic properties of Co electrodeposited on nanoporous Au
DOI:10.1063/1.3575327 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Hakamada, Masataka;Hirashima, Fumi;Takahashi, Masaki;Nakazawa, Takumi;Mabuchi, Mamoru;
10:502:9 Electroless preparation and characterization of Ni-B nanoparticles supported on multi-walled carbon nanotubes and their catalytic activity towards hydrogenation of styrene
DOI:10.1016/j.materresbull.2011.11.010 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:9 AU: Liu, Zheng;Li, Zhilin;Wang, Feng;Liu, Jingjun;Ji, Jing;Park, Ki Chul;Endo, Morinobu;
10:502:10 Nanostructured metallic foam electrodeposits on a nonconductive substrate
DOI:10.1039/c1jm13760c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:8 AU: Choi, Woo-Sung;Jung, Hye-Ran;Kwon, Se-Hun;Lee, Jong-Won;Liu, Meilin;Shin, Heon-Cheol;
10:503:1 Optical and structural properties of Nd doped SnO2 powder fabricated by the sol-gel method
DOI:10.1039/c4tc01202j JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Bouras, K.;Rehspringer, J. -L.;Schmerber, G.;Rinnert, H.;Colis, S.;Ferblantier, G.;Balestrieri, M.;Ihiawakrim, D.;Dinia, A.;Slaoui, A.;
10:503:2 Photoluminescence of undoped and Ce-doped SnO2 thin films deposited by sol-gel-dip-coating method
DOI:10.1016/j.apsusc.2011.11.077 JN:APPLIED SURFACE SCIENCE PY:2012
TC:19 AU: Chen, Shuai;Zhao, Xiaoru;Xie, Haiyan;Liu, Jinming;Duan, Libing;Ba, Xiaojun;Zhao, Jianlin;
10:503:3 Controlled synthesis of SnO2 nanostructures with different morphologies and the influence on photocatalysis properties
DOI:10.1063/1.4821140 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Guan, Mengmeng;Zhao, Xiaoru;Duan, Libing;Cao, Mengmeng;Guo, Wenrui;Liu, Jinru;Zhang, Wei;
10:503:4 SnO2 based sensors with improved sensitivity and response-recovery time
DOI:10.1016/j.ceramint.2014.01.050 JN:CERAMICS INTERNATIONAL PY:2014
TC:8 AU: Kumar, Manjeet;Kumar, Akshay;Abhyankar, A. C.;
10:503:5 Gram-scale synthesis of highly crystalline, 0-D and 1-D SnO2 nanostructures through surfactant-free hydrothermal process
DOI:10.1007/s11051-012-0969-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:6 AU: Pal, Umapada;Pal, Mou;Sanchez Zeferino, Raul;
10:503:6 Influence of In doping on the structural, photo-luminescence and alcohol response characteristics of the SnO2 nanoparticles
DOI:10.1016/j.materresbull.2013.06.071 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:2 AU: Mishra, R. K.;Pandey, Shiv K.;Sahay, P. P.;
10:503:7 Photoluminescence of Nd-doped SnO2 thin films
DOI:10.1063/1.3692747 JN:APPLIED PHYSICS LETTERS PY:2012
TC:9 AU: Rinnert, H.;Miska, P.;Vergnat, M.;Schmerber, G.;Colis, S.;Dinia, A.;Muller, D.;Ferblantier, G.;Slaoui, A.;
10:503:8 Dose enhancing behavior of hydrothermally grown Eu-doped SnO2 nanoparticles
DOI:10.1063/1.4790486 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Sanchez Zeferino, R.;Pal, U.;Melendrez, R.;Duran-Munoz, H. A.;Barboza Flores, M.;
10:503:9 Structural, optical, electrical properties and FTIR studies of fluorine doped SnO2 films deposited by spray pyrolysis
DOI:10.1007/s10853-010-5021-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:13 AU: Zhang, B.;Tian, Y.;Zhang, J. X.;Cai, W.;
10:503:10 Synthesis and Characterization of Single-Crystalline SnO2 Nanowires
DOI:10.1155/2013/761498 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Wei, Dezhou;Shen, Yanbai;Li, Mingyang;Liu, Wengang;Gao, Shuling;Jia, Lijun;Han, Cong;Cui, Baoyu;
10:503:11 Synthesis and ethanol-sensing properties of flowerlike SnO2 nanorods bundles by poly(ethylene glycol)-assisted hydrothermal process
DOI:10.1016/j.matchemphys.2010.07.022 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:14 AU: Zhou, Xiaoming;Fu, Wuyou;Yang, Haibin;Ma, Dong;Cao, Jing;Leng, Yan;Guo, Jin;Zhang, Yanyan;Sui, Yongming;Zhao, Wenyan;Li, Minghui;
10:504:1 Preparation of thermo-responsive superhydrophobic TiO2/poly(N-isopropylacrylamide) microspheres
DOI:10.1016/j.apsusc.2012.04.096 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Chen, Hao;Pan, Shuaijun;Xiong, Yuzi;Peng, Chang;Pang, Xiangzhong;Li, Ling;Xiong, Yuanqin;Xu, Weijian;
10:504:2 Structural characteristics of mixed oxides MOx/SiO2 affecting photocatalytic decomposition of methylene blue
DOI:10.1016/j.apsusc.2012.03.025 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Gun'ko, V. M.;Blitz, J. P.;Bandaranayake, B.;Pakhlov, E. M.;Zarko, V. I.;Sulym, I. Ya.;Kulyk, K. S.;Galaburda, M. V.;Bogatyrev, V. M.;Oranska, O. I.;Borysenko, M. V.;Leboda, R.;Skubiszewska-Zieba, J.;Janush, W.;
10:504:3 Sol-gel based alumina powders with catalytic applications
DOI:10.1016/j.apsusc.2011.08.104 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Crisan, Maria;Zaharescu, Maria;Kumari, Valluri Durga;Subrahmanyam, Machiraju;Crisan, Dorel;Dragan, Nicolae;Raileanu, Malina;Jitianu, Mihaela;Rusu, Adriana;Sadanandam, Gullapelli;Reddy, Jakkidi Krishna;
10:504:4 Sol-gel derived Cr(III) and Cu(II)/gamma-Al2O3 doped solids: Effect of the dopant precursor nature on the structural, textural and morphological properties
DOI:10.1016/j.materresbull.2013.01.027 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:1 AU: Khaleel, Abbas;Nawaz, Muhammad;Hindawi, Bassam;
10:504:5 Effect of the functional groups of carbon on the surface and catalytic properties Ru/C catalysts for hydrogenolysis of glycerol
DOI:10.1016/j.apsusc.2013.09.087 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Gallegos-Suarez, E.;Perez-Cadenas, M.;Guerrero-Ruiz, A.;Rodriguez-Ramos, I.;Arcoya, A.;
10:504:6 Textural, structural, and morphological characterizations and catalytic activity of nanosized CeO2-MOx (M = Mg2+, Al3+, Si4+) mixed oxides for CO oxidation
DOI:10.1016/j.jcis.2010.10.043 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:25 AU: Yu, Qiang;Wu, Xiaoxia;Tang, Changjin;Qi, Lei;Liu, Bin;Gao, Fei;Sun, Keqin;Dong, Lin;Chen, Yi;
10:504:7 Superhydrophobicity of superparamagnetic nanocomposite modified with polystyrene
DOI:10.1016/j.apsusc.2012.01.113 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Zhang, Jingjing;Lei, Zhongli;
10:504:8 Diffusion of Cr, Fe, and Ti ions from Ni-base alloy Inconel-718 into a transition alumina coating
DOI:10.1016/j.tsf.2012.02.006 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Dressler, M.;Nofz, M.;Doerfel, I.;Saliwan-Neumann, R.;
10:504:9 Synthesis and characterization of spherical core-shell particles SiO2@AgEu(MoO4)(2)
DOI:10.1016/j.apsusc.2009.10.006 JN:APPLIED SURFACE SCIENCE PY:2010
TC:4 AU: Xu, Yan;Guo, Chongfeng;Luan, Lin;Ding, Xu;
10:504:10 'Structural characteristics of mixed oxides MOx/SiO2 affecting photocatalytic decomposition of methylene blue' (vol 258, pg 6288, 2012)
DOI:10.1016/j.apsusc.2012.07.048 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Gun'ko, V. M.;Blitz, J. P.;Bandaranayake, B.;Pakhlov, E. M.;Zarko, V. I.;Sulym, I. Ya.;Kulyk, K. S.;Galaburda, M. V.;Bogatyrev, V. M.;Oranska, O. I.;Borysenko, M. V.;Leboda, R.;Skubiszewska-Zieba, J.;Janusz, W.;
10:504:11 Stable Ir/SiO2 catalyst for selective hydrogenation of crotonaldehyde
DOI:10.1016/j.apsusc.2013.01.035 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Hong, Xiao;Li, Bo;Wang, Yuejuan;Lu, Jiqing;Hu, Gengshen;Luo, Mengfei;
10:504:12 Promoting effect of Ir on the catalytic property of Ru/ZnO catalysts for selective hydrogenation of crotonaldehyde
DOI:10.1016/j.apsusc.2013.04.122 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Li, Bo;Hong, Xiao;Lin, Jian-Jun;Hu, Geng-Shen;Yu, Qin;Wang, Yue-Juan;Luo, Meng-Fei;Lu, Ji-Qing;
10:504:13 Differences between films and monoliths of sol-gel derived aluminas
DOI:10.1016/j.tsf.2010.07.057 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Dressler, M.;Nofz, M.;Klobes, P.;Doerfel, I.;Reinsch, S.;
10:505:1 Characteristics of organic light emitting diodes with copper iodide as injection layer
DOI:10.1016/j.tsf.2010.06.051 JN:THIN SOLID FILMS PY:2010
TC:25 AU: Stakhira, P.;Cherpak, V.;Volynyuk, D.;Ivastchyshyn, F.;Hotra, Z.;Tataryn, V.;Luka, G.;
10:505:2 Blue organic light-emitting diodes based on pyrazoline phenyl derivative
DOI:10.1016/j.synthmet.2011.12.017 JN:SYNTHETIC METALS PY:2012
TC:9 AU: Stakhira, P.;Khomyak, S.;Cherpak, V.;Volyniuk, D.;Simokaitiene, J.;Tomkeviciene, A.;Kukhta, N. A.;Grazulevicius, J. V.;Kukhta, A. V.;Sun, X. W.;Demir, H. V.;Hotra, Z.;Voznyak, L.;
10:505:3 ORGANIC ELECTRONICS Enlightened organic transistors
DOI:10.1038/nmat2775 JN:NATURE MATERIALS PY:2010
TC:9 AU: Melzer, Christian;von Seggern, Heinz;
10:505:4 3,6-Di(9-carbazolyl)-9-(2-ethylhexyl)carbazole based single-layer blue organic light emitting diodes
DOI:10.1016/j.synthmet.2011.04.035 JN:SYNTHETIC METALS PY:2011
TC:9 AU: Cherpak, V. V.;Stakhira, P. Y.;Volynyuk, D. Yu.;Simokaitiene, J.;Tomkeviciene, A.;Grazulevicius, J. V.;Bucinskas, A.;Yashchuk, V. M.;Kukhta, A. V.;Kukhta, I. N.;Kosach, V. V.;Hotra, Z. Yu.;
10:505:5 Electro-Acoustic Effect in Organic Structure Based on Star-Shaped Carbazole Derivatives
DOI:10.1080/15421406.2013.871918 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Hotra, Z.;Volyniuk, D.;Cherpak, V.;Stakhira, P.;Grygorchak, I.;Grazulevicius, J. V.;Michaleviciute, A.;Tomkeviciene, A.;Barylo, G.;Kus, N.;Hladun, M.;
10:505:6 Properties of 2,6-di-tert.-butyl-4-(2,5-diphenyl-3,4-dihydro-2H-pyrazol-3-yl)-phenol as hole-transport material for life extension of organic light emitting diodes
DOI:10.1016/j.optmat.2011.05.034 JN:OPTICAL MATERIALS PY:2011
TC:6 AU: Cherpak, V.;Stakhira, P.;Khomyak, S.;Volynyuk, D.;Hotra, Z.;Voznyak, L.;Dovbeshko, G.;Fesenko, O.;Sorokin, V.;Rybalochka, A.;Oliynyk, O.;
10:505:7 Ambipolar conductivity in organic field-effect transistors based on 1, 7-bis(9-ethyl-3-carbazoly1) N,N '-2-ethyl hexyl perylene bisimide under the light illumination
DOI:10.1016/j.optmat.2014.04.013 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Cherpak, V.;Stakhira, P.;Volynyuk, D.;Politanskiy, L.;Kus, N.;Reghu, R. R.;Grazulevicius, J. V.;
10:505:8 Diferrocenyl Molecular Wires. The Role of Heteroatom Linkers
DOI:10.1021/ja101585z JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:28 AU: Li, Yu;Josowicz, Mira;Tolbert, Laren M.;
10:505:9 Delocalization-to-Localization Charge Transition in Diferrocenyl-Oligothienylene-Vinylene Molecular Wires as a Function of the Size by Raman Spectroscopy
DOI:10.1021/ja3005607 JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:9 AU: Rodriguez Gonzalez, Sandra;Ruiz Delgado, M. Carmen;Caballero, Ruben;De la Cruz, Pilar;Langa, Fernando;Lopez Navarrete, Juan T.;Casado, Juan;
10:506:1 Theoretical investigation of growth, stability, and electronic properties of beaded ZnO nanoclusters
DOI:10.1039/c1jm12061a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:15 AU: Zhang, Shengli;Zhang, Yonghong;Huang, Shiping;Liu, Hui;Wang, Peng;Tian, Huiping;
10:506:2 Prospective Role of Multicenter Bonding for Efficient and Selective Hydrogen Transport
DOI:10.1103/PhysRevLett.105.045901 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:9 AU: Stradi, Daniele;Illas, Francesc;Bromley, Stefan T.;
10:506:3 Investigation on the sulfur state and phase transformation of spent and regenerated S zorb sorbents using XPS and XRD
DOI:10.1016/j.apsusc.2012.11.156 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Qiu, Limei;Zou, Kang;Xu, Guangtong;
10:506:4 Nonstoichiometric Mn-doped ZnO magic nanoclusters and their composite structures from ab initio calculations
DOI:10.1103/PhysRevB.86.205320 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Nanavati, Sachin P.;Sundararajan, Vijayaraghavan;Mahamuni, Shailaja;Ghaisas, S. V.;Kumar, Vijay;
10:506:5 Peak overlaps and corresponding solutions in the X-ray photoelectron spectroscopic study of hydrodesulfurization catalysts
DOI:10.1016/j.apsusc.2009.12.043 JN:APPLIED SURFACE SCIENCE PY:2010
TC:24 AU: Qiu, Limei;Xu, Guangtong;
10:506:6 Mechanistic investigations on the adsorption of thiophene over Zn3NiO4 bimetallic oxide cluster
DOI:10.1016/j.apsusc.2012.06.096 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Zhang, Shengli;Zhang, Yonghong;Huang, Shiping;Wang, Peng;Tian, Huiping;
10:506:7 Theoretical investigation of assembled (CdTe)(12xN) (N=1-5) multi-cage nanochains
DOI:10.1016/j.commatsci.2012.10.040 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:2 AU: Wu, Zheng;Zhang, Yonghong;Huang, Shiping;Zhang, Shengli;
10:506:8 Preparation of supported hydrodesulfurization catalysts with enhanced performance using Mo-based inorganic-organic hybrid nanocrystals as a superior precursor
DOI:10.1039/c2jm34979e JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:11 AU: Han, Wei;Yuan, Pei;Fan, Yu;Shi, Gang;Liu, Haiyan;Bai, Danjiang;Bao, Xiaojun;
10:506:9 Synthesis of highly luminescent CdTe/ZnO core/shell quantum dots in aqueous solution
DOI:10.1007/s10853-011-6228-7 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:9 AU: Yuan, Zhimin;Ma, Qian;Zhang, Aiyu;Cao, Yongqiang;Yang, Jie;Yang, Ping;
10:506:10 Adsorption of NO and N2O on Fe-BEA and H-BEA zeolites
DOI:10.1016/j.apsusc.2010.01.075 JN:APPLIED SURFACE SCIENCE PY:2010
TC:15 AU: Wang, Yuli;Lei, Zhigang;Chen, Biaohua;Guo, Quanhui;Liu, Ning;
10:506:11 A theoretical study of thiophenic compounds adsorption on cation-exchanged Y zeolites
DOI:10.1016/j.apsusc.2011.03.115 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Wang, Lingtao;Sun, Zhaolin;Ding, Yong;Chen, Yongchang;Li, Qiang;Xu, Ming;Li, Huailei;Song, Lijuan;
10:506:12 Synthesis, self-assembly and disassembly of mono-dispersed Mo-based inorganic-organic hybrid nanocrystals
DOI:10.1039/c2jm31033c JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:6 AU: Han, Wei;Yuan, Pei;Fan, Yu;Liu, Haiyan;Bao, Xiaojun;
10:506:13 Discovery of a nonstoichiometric Zn11MnSe13 magnetic magic quantum dot from ab initio calculations
DOI:10.1103/PhysRevB.84.045306 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Nanavati, Sachin P.;Sundararajan, Vijayaraghavan;Mahamuni, Shailaja;Ghaisas, S. V.;Kumar, Vijay;
10:506:14 Electronic structure and magnetism of transition metal doped Zn12O12 clusters: Role of defects
DOI:10.1063/1.3525649 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Ganguli, Nirmal;Dasgupta, Indra;Sanyal, Biplab;
10:507:1 Correlation between the structural and optical properties of Mn-doped ZnO nanoparticles
DOI:10.1016/j.jallcom.2012.01.116 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:10 AU: Ton-That, Cuong;Foley, Matthew;Phillips, Matthew R.;Tsuzuki, Takuya;Smith, Zoe;
10:507:2 Effect of Al co-doping on the electrical and magnetic properties of Cu-doped ZnO nanorods
DOI:10.1016/j.jallcom.2014.06.204 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Wu, Z. F.;Cheng, K.;Zhang, F.;Guan, R. F.;Wu, X. M.;Zhuge, L. J.;
10:507:3 Synthesis and magnetic properties of Mn-doped ZnO nanorods via radio frequency plasma deposition
DOI:10.1016/j.matlet.2009.11.053 JN:MATERIALS LETTERS PY:2010
TC:8 AU: Wu, Z. F.;Wu, X. M.;Zhuge, L. J.;Hong, B.;Yang, X. M.;Chen, X. M.;Chen, Q.;
10:507:4 X-ray photoelectron spectroscopy of Zn0.98Cu0.02O thin film grown on ZnO seed layer by RF sputtering
DOI:10.1016/j.matlet.2012.08.017 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Vij, Ankush;Gautam, Sanjeev;Won, Sung Ok;Thakur, Anup;Lee, Ik-Jae;Chae, Keun Hwa;
10:507:5 Magnetic and optical properties of monosized Eu-doped ZnO nanocrystals from nanoemulsion
DOI:10.1063/1.3676422 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Yoon, Hayoung;Wu, Jun Hua;Min, Ji Hyun;Lee, Ji Sung;Ju, Jae-Seon;Kim, Young Keun;
10:507:6 Microstructure and magnetic properties of Mn-doped 3C-SiC nanowires
DOI:10.1016/j.matlet.2012.02.109 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Tian, Y.;Zheng, H. W.;Liu, X. Y.;Li, S. J.;Zhang, Y. J.;Hu, J. F.;Lv, Z. C.;Liu, Y. F.;Gu, Y. Z.;Zhang, W. F.;
10:507:7 Diffusion synthesis and electronic properties of Fe-doped ZnO
DOI:10.1016/j.matlet.2009.11.024 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Ton-That, Cuong;Foley, Matthew;Lem, Laurent Lee Cheong;McCredie, Geoff;Phillips, Matthew R.;Cowie, Bruce C. C.;
10:507:8 Intra-manganese luminescence in ZnO:Mn2+ nanorods prepared by a simple thermal evaporation process
DOI:10.1016/j.matlet.2012.12.054 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Tong, Yan-Hua;Cao, Feng;Yang, Jin-Tian;Tang, Pei-Song;Xu, Min-Hong;
10:507:9 Enhancement of UV emission in ZnO nanorods by growing additional ZnO layers on the surface
DOI:10.1088/0957-4484/22/27/275707 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Kim, Yongseon;Kang, Shinhoo;
10:507:10 Effect of annealing atmospheres on photo-luminescence property of ZnO nano-thin films
DOI:10.1016/j.materresbull.2012.06.069 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:3 AU: Li, Ya-Nan;Cheng, Xiao-Li;Huo, Li-Hua;Zhao, Hui;Gao, Shan;
10:508:1 Structural, magnetic and nanomechanical properties in Ni-doped AlN films
DOI:10.1016/j.jallcom.2014.03.178 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Xiong, Juan;Guo, Peng;Cai, Yaxuan;Stradel, Bohumir;Brumek, Jan;He, Yunbin;Gu, Haoshuang;
10:508:2 Magnetic and transport properties of Mn0.02Sn0.98O22-delta thin films grown on p-Si varying O-2 pressure
DOI:10.1063/1.4869741 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Bhaumik, S.;Ray, S. K.;Das, A. K.;
10:508:3 Tunable magnetic and transport properties of p-type ZnMnO films with n-type Ga, Cr, and Fe codopants
DOI:10.1063/1.4795519 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Fan, Jiu-Ping;Li, Xiao-Li;Quan, Zhi-Yong;Xu, Xiao-Hong;
10:508:4 Effect of oxygen pressure on the structural, optical and magnetic properties of pulsed laser ablated ZnCoO thin films
DOI:10.1016/j.jallcom.2011.12.170 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Wang, C. C.;Liu, M.;Man, B. Y.;Chen, C. S.;Jiang, S. Z.;Yang, S. Y.;Gao, X. G.;Xu, S. C.;Hu, B.;Sun, Z. C.;
10:508:5 Microstructure and friction-reducing performance of sulfurized W doped diamond-like carbon film
DOI:10.1016/j.matlet.2012.01.044 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Yue, Wen;Gao, Xiaocheng;Wang, Chengbiao;Fu, Zhiqiang;Yu, Xiang;Liu, Jiajun;
10:509:1 Thermal growth, luminescence and whispering gallery resonance modes of indium oxide microrods and microcrystals
DOI:10.1039/c3tc31195c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:6 AU: Bartolome, Javier;Cremades, Ana;Piqueras, Javier;
10:509:2 Dense vertical nanoplates arrays and nanobelts of indium doped ZnO grown by thermal treatment of ZnS-In2O3 powders
DOI:10.1016/j.jcrysgro.2010.07.066 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Aleman, B.;Fernandez, P.;Piqueras, J.;
10:509:3 Dispersion and polarization conversion of whispering gallery modes in nanowires
DOI:10.1103/PhysRevB.82.195328 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Pavlovic, G.;Malpuech, G.;Gippius, N. A.;
10:509:4 Whispering gallery modes with different polarizations in semiconductor microrod with rectangle shape
DOI:10.1063/1.3673329 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Ye, Xiaoliang;Mao, Huibing;Wang, Jiqing;Zhu, Ziqiang;
10:509:5 Resonant cavity modes in gallium oxide microwires
DOI:10.1063/1.4732153 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Lopez, Inaki;Nogales, Emilio;Mendez, Bianchi;Piqueras, Javier;
10:509:6 Luminescence and waveguiding behavior in Tb doped ZnO micro and nanostructures
DOI:10.1016/j.jallcom.2014.05.007 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Urbieta, A.;del Campo, R.;Perez, R.;Fernandez, P.;Piqueras, J.;
10:509:7 Zn-catalyzed growth processes and ferromagnetism of Mn-doped ZnO nanorods on Si substrate
DOI:10.1016/j.apsusc.2011.01.013 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Yan, H. L.;Wang, J. B.;Zhong, X. L.;
10:509:8 Nanowires and stacks of nanoplates of Mn doped ZnO synthesized by thermal evaporation-deposition
DOI:10.1016/j.matchemphys.2011.12.084 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:7 AU: Urbieta, A.;Fernandez, P.;Piqueras, J.;
10:509:9 Indium oxide octahedra optical microcavities
DOI:10.1063/1.3521266 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Dong, Hongxing;Sun, Liaoxin;Sun, Shulin;Xie, Wei;Zhou, Lei;Shen, Xuechu;Chen, Zhanghai;
10:510:1 Room temperature ferromagnetism in Mn doped TiO2 thin films: Electronic structure and Raman investigations
DOI:10.1063/1.3567938 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:31 AU: Sharma, Sudesh;Chaudhary, Sujeet;Kashyap, Subhash C.;Sharma, Shiv K.;
10:510:2 Room temperature ferromagnetism in Mn-doped TiO2 nanopillar matrices
DOI:10.1016/j.matlet.2013.09.097 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Sellers, Meredith C. K.;Seebauer, Edmund G.;
10:510:3 Measurement method for carrier concentration in TiO2 via the Mott-Schottky approach
DOI:10.1016/j.tsf.2010.10.071 JN:THIN SOLID FILMS PY:2011
TC:28 AU: Sellers, Meredith C. K.;Seebauer, Edmund G.;
10:510:4 Manipulation of polycrystalline TiO2 carrier concentration via electrically active native defects
DOI:10.1116/1.3635373 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:4 AU: Sellers, Meredith C. K.;Seebauer, Edmund G.;
10:510:5 Structural and magnetic properties of Mn-doped anatase TiO2 films synthesized by atomic layer deposition
DOI:10.1007/s00339-011-6308-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:5 AU: Sellers, Meredith C. K.;Seebauer, Edmund G.;
10:510:6 Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique
DOI:10.1016/j.jmmm.2013.12.025 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:5 AU: Mohanty, P.;Kabiraj, D.;Mandal, R. K.;Kulriya, P. K.;Sinha, A. S. K.;Rath, Chandana;
10:510:7 Magnetic, structural, electronic, and optical investigations of Ti1-xMnxO2 films
DOI:10.1557/jmr.2012.238 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:0 AU: Sharma, Sudesh;Chaudhary, Sujeet;Kashyap, Subhash Chand;
10:510:8 Structural and magnetic properties of Mn:TiO2 films grown by plasma-assisted molecular beam epitaxy
DOI:10.1016/j.mseb.2012.03.030 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:0 AU: Li, X. Y.;Xiao, J. R.;Wang, Z. Y.;Li, S. W.;
10:511:1 Magnetic and optical properties of electrospun hollow nanofibers of SnO2 doped with Ce-ion
DOI:10.1063/1.4886804 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Mohanapriya, P.;Pradeepkumar, R.;Jaya, N. Victor;Natarajan, T. S.;
10:511:2 The effect of surfactants on the magnetic and optical properties of Co-doped SnO2 nanoparticles
DOI:10.1016/j.apsusc.2011.08.037 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Jiang, He;Liu, Xiao Fang;Zou, Zhi Yu;Wu, Zhang Ben;He, Bo;Yu, Rong Hai;
10:511:3 Modification of the structural and optical properties of tin oxide nanoparticles by Co doping and thermal annealing
DOI:10.1007/s00339-013-7805-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Vijayarangamuthu, K.;Rath, Shyama;
10:511:4 Structural, electronic, and magnetic properties of Co doped SnO(2) nanoparticles
DOI:10.1063/1.3415541 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:18 AU: Sharma, Aditya;Singh, Abhinav Pratap;Thakur, P.;Brookes, N. B.;Kumar, Shalendra;Lee, Chan Gyu;Choudhary, R. J.;Verma, K. D.;Kumar, Ravi;
10:511:5 Influence of a TiO2 buffer layer on the magnetic properties of anatase Co:TiO2 thin films
DOI:10.1063/1.4706570 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Gabor, M. S.;Petrisor, T., Jr.;Tiusan, C.;Hehn, M.;Vasile, B. S.;Petrisor, T.;
10:511:6 Structural, magnetic and electronic structure studies of Mn doped TiO2 thin films
DOI:10.1016/j.apsusc.2011.07.050 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Kumar, Shalendra;Gautam, S.;Kim, G. W.;Ahmed, Faheem;Anwar, M. S.;Chae, K. H.;Choi, H. K.;Chung, H.;Koo, B. H.;
10:511:7 Nitrogen doping-mediated room-temperature ferromagnetism in insulating Co-doped SnO2 films
DOI:10.1016/j.apsusc.2010.01.079 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Liu, X. F.;Iqbal, Javed;Yang, S. L.;He, B.;Yu, R. H.;
10:511:8 Nanoparticle size, oxidation state, and sensing response of tin oxide nanopowders using Raman spectroscopy
DOI:10.1016/j.jallcom.2014.04.187 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:5 AU: Vijayarangamuthu, K.;Rath, Shyama;
10:512:1 Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids
DOI:10.1063/1.4790155 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Spalenka, Josef W.;Gopalan, Padma;Katz, Howard E.;Evans, Paul G.;
10:512:2 Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride
DOI:10.1063/1.4795146 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:6 AU: Hadi, Walid A.;Guram, Prabhjot K.;Shur, Michael S.;O'Leary, Stephen K.;
10:512:3 A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide
DOI:10.1063/1.4771679 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:10 AU: Hadi, Walid A.;Chowdhury, Shamsul;Shur, Michael S.;O'Leary, Stephen K.;
10:512:4 Spectral resolution of states relevant to photoinduced charge transfer in modified pentacene/ZnO field-effect transistors
DOI:10.1063/1.3660225 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Spalenka, Josef W.;Mannebach, Ehren M.;Bindl, Dominick J.;Arnold, Michael S.;Evans, Paul G.;
10:512:5 An enhancement in the low-field electron mobility associated with a ZnMgO/ZnO heterostructure: The role of a two-dimensional electron gas
DOI:10.1063/1.4812492 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Baghani, Erfan;O'Leary, Stephen K.;
10:512:6 Molecular control of pentacene/ZnO photoinduced charge transfer
DOI:10.1063/1.3560481 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Spalenka, Josef W.;Paoprasert, Peerasak;Franking, Ryan;Hamers, Robert J.;Gopalan, Padma;Evans, Paul G.;
10:512:7 A transient electron transport analysis of bulk wurtzite zinc oxide
DOI:10.1063/1.4745027 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Hadi, Walid A.;Shur, Michael S.;O'Leary, Stephen K.;
10:512:8 Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
DOI:10.1063/1.3488024 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Visalli, Domenica;Van Hove, Marleen;Srivastava, Puneet;Derluyn, Joff;Das, Johan;Leys, Maarten;Degroote, Stefan;Cheng, Kai;Germain, Marianne;Borghs, Gustaaf;
10:513:1 Radio frequency-H2O plasma treatment on indium tin oxide films produced by electron beam and radio frequency magnetron sputtering methods
DOI:10.1016/j.tsf.2014.07.035 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Kiristi, Melek;Gulec, Ali;Bozduman, Ferhat;Oksuz, Lutfi;Oksuz, Aysegul Uygun;Hala, Ahmed;
10:513:2 Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering
DOI:10.1016/j.tsf.2010.03.041 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Kim, Youn J.;Jin, Su B.;Kim, Sung I.;Choi, Yoon S.;Choi, In S.;Han, Jeon G.;
10:513:3 Effects of H-2/O-2 mixed gas plasma treatment on electrical and optical property of indium tin oxide
DOI:10.1016/j.apsusc.2012.10.153 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Kim, Jun Young;Lee, Dong-Min;Kim, Jae-Kwan;Yang, Su-Hwan;Lee, Ji-Myon;
10:513:4 Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications
DOI:10.1016/j.materresbull.2013.07.026 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:6 AU: Park, Yong Seob;Kim, Eungkwon;Hong, Byungyou;Lee, Jaehyoeng;
10:513:5 Towards anode with low indium content as effective anode in organic solar cells
DOI:10.1016/j.apsusc.2011.10.146 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Touihri, S.;Cattin, L.;Nguyen, D-T;Morsli, M.;Louarn, G.;Bouteville, A.;Froger, V.;Bernede, J. C.;
10:513:6 The deposition of low temperature sputtered In2O3 films using pulsed d.c magnetron sputtering from a powder target
DOI:10.1016/j.tsf.2013.10.141 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Karthikeyan, Sreejith;Hill, Arthur E.;Pilkington, Richard D.;
10:513:7 Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature
DOI:10.1016/j.tsf.2014.01.039 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Xiao, Yu;Gao, Fangyuan;Dong, Guobo;Guo, Tingting;Liu, Qirong;Ye, Di;Diao, Xungang;
10:513:8 Properties of indium tin oxide thin films prepared on the oxygen plasma-treated polycarbonate substrate
DOI:10.1016/j.tsf.2011.01.407 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Jung, Yu Sup;Kim, Woo-Jae;Choi, Hyung-Wook;Park, Yong-Seo;Kim, Kyung Hwan;
10:513:9 Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices
DOI:10.1063/1.3486180 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Park, Jaehoon;Kim, Hey Min;Kim, Dong Wook;Choi, Jong Sun;
10:513:10 Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing
DOI:10.1016/j.jallcom.2013.07.035 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Ye, Yi;Song, Lixin;Song, Xianglian;Zhang, Tao;
10:514:1 ZnO nanoparticles decorated with organic anion receptor: Selective recognition of sulfate anion
DOI:10.1016/j.matlet.2013.02.100 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Kaur, Simanpreet;Kaur, Amanpreet;Kaur, Navneet;
10:514:2 Imine coupled ZnO based fluorescent chemosensor for the simultaneous estimation of Al3+ and Cr3+
DOI:10.1016/j.matlet.2012.04.043 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Kaur, Kamalpreet;Kaur, Navneet;Singh, Narinder;
10:514:3 Imine linked chemosensors coupled with ZnO: Fluorescent and chromogenic detection of Al3+
DOI:10.1016/j.matlet.2012.06.066 JN:MATERIALS LETTERS PY:2012
TC:15 AU: Sharma, Hemant;Narang, Karan;Singh, Narinder;Kaur, Navneet;
10:514:4 Flower-like hierarchical zinc oxide architectures: Synthesis and gas sensing properties
DOI:10.1016/j.matlet.2011.11.037 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Cao, Yang;Hu, Xiaolong;Wang, Dawei;Sun, Yanfeng;Sun, Peng;Zheng, Jie;Ma, Jian;Lu, Geyu;
10:514:5 Differential recognition of anions with ZnO based urea-coupled sensors
DOI:10.1016/j.matlet.2013.05.130 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Kaur, Simanpreet;Bharadwaj, Vimal K.;Kaur, Amanpreet;Singh, Narinder;Kaur, Navneet;
10:514:6 Thermoresponsive Copolymer Containing a Coumarin-Spiropyran Conjugate: Reusable Fluorescent Sensor for Cyanide Anion Detection in Water
DOI:10.1021/am201069n JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:30 AU: Shiraishi, Yasuhiro;Sumiya, Shigehiro;Manabe, Kenji;Hirai, Takayuki;
10:514:7 Synthesis of hierarchical ZnO orientation-ordered film by chemical bath deposition and its gas sensing properties
DOI:10.1016/j.matlet.2012.04.090 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Xu, Jing;Yu, Yingshuo;He, Xinxin;Sun, Jianbo;Liu, Fengmin;Lu, Geyu;
10:514:8 Sensing of the uranyl ion based on its complexation with bisphosphonate-capped gold nanoparticles
DOI:10.1016/j.matlet.2014.01.097 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Drogat, Nicolas;Jauberty, Loic;Chaleix, Vincent;Granet, Robert;Guenin, Erwann;Sol, Vincent;Gloaguen, Vincent;
10:514:9 Laser-assisted hydrothermal growth of size-controlled ZnO nanorods for sensing applications
DOI:10.1088/0957-4484/21/36/365502 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Henley, S. J.;Fryar, J.;Jayawardena, K. D. G. I.;Silva, S. R. P.;
10:514:10 Synthesis of 16-Mercaptohexadecanoic acid capped gold nanoparticles and their immobilization on a substrate
DOI:10.1016/j.matlet.2011.09.047 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Gupta, Raju Kumar;Srinivasan, M. P.;Dharmarajan, R.;
10:515:1 Thickness dependent physical and photocatalytic properties of ITO thin films prepared by reactive DC magnetron sputtering
DOI:10.1016/j.apsusc.2010.10.119 JN:APPLIED SURFACE SCIENCE PY:2011
TC:21 AU: Kumar, K. Jagadeesh;Raju, N. Ravi Chandra;Subrahmanyam, A.;
10:515:2 Oxygen-deficient indium tin oxide thin films annealed by atmospheric pressure plasma jets with/without air-quenching
DOI:10.1016/j.apsusc.2013.11.118 JN:APPLIED SURFACE SCIENCE PY:2014
TC:13 AU: Liao, Wei-Yang;Chang, Haoming;Yang, Yao-Jhen;Hsu, Cheng-Che;Cheng, I-Chun;Chen, Jian-Zhang;
10:515:3 A direct method to measure the fracture toughness of indium tin oxide thin films on flexible polymer substrates
DOI:10.1016/j.tsf.2013.05.116 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Chang, Rwei-Ching;Tsai, Fa-Ta;Tu, Chin-Hsiang;
10:515:4 Optical analysis of room temperature magnetron sputtered ITO films by reflectometry and spectroscopic ellipsometry
DOI:10.1557/jmr.2014.173 JN:JOURNAL OF MATERIALS RESEARCH PY:2014
TC:1 AU: Lohner, Tivadar;Kumar, K. Jagadeesh;Petrik, Peter;Subrahmanyam, Aryasomayajula;Barsony, Istvan;
10:515:5 Indium tin oxide sol-gel precursor conversion process using the third harmonics of Nd:YAG laser
DOI:10.1016/j.apsusc.2011.06.135 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Chen, Jian Z.;Huang, Chang-Pin;Tseng, Wei-Hsuan;Cheng, I-Chun;Wu, Chih-I;
10:515:6 (211)-Orientation Preference of Transparent Conducting In2O3:Sn Films and Its Formation Mechanism
DOI:10.1021/am2012432 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:0 AU: Wan, Dongyun;Chen, Ping;Liang, Jun;Li, Shaotang;Huang, Fuqiang;
10:515:7 Rethinking the role that the "step" in the load-displacement curves can play in measurement of fracture toughness for hard coatings
DOI:10.1016/j.tsf.2011.12.056 JN:THIN SOLID FILMS PY:2012
TC:6 AU: Zhang, Xiaomin;Zhang, Sam;
10:515:8 Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates
DOI:10.1016/j.apsusc.2011.12.016 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Chang, R. C.;Li, T. C.;Lin, C. W.;
10:515:9 RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers
DOI:10.1016/j.mseb.2011.01.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:2 AU: Kulik, M.;Zuk, J.;Drozdziel, A.;Pyszniak, K.;Komarov, F. F.;Rzodkiewicz, W.;
10:515:10 Investigation into inhomogeneous electrical and optical properties of indium tin oxide film using spectroscopic ellipsometry with multi-layer optical models
DOI:10.1364/OME.4.0043 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:1 AU: Tseng, Kun-San;Lo, Yu-Lung;
10:516:1 The preparation, characterization and optical properties of Cd2V2O7 and CdCO3 compounds
DOI:10.1016/j.matchemphys.2014.06.050 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Huang, Peng;Zhang, Xin;Wei, Jumeng;Pan, Jiaqi;Sheng, Yingzho;Feng, Boxue;
10:516:2 Charge transfer and optical properties of wurtzite-type ZnS/(CdS/ZnS)(n) (n=2, 4, 8) superlattices
DOI:10.1016/j.materresbull.2013.11.010 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:2 AU: Zeng, Xianghua;Zhang, Wei;Cui, Jieya;Zhou, Min;Chen, Haitao;
10:516:3 Synthesis and magnetic property of FeMoO4 nanorods
DOI:10.1016/j.mseb.2011.02.018 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:10 AU: Zhang, Zhiyi;Hu, Chenguo;Hashim, Muhammad;Chen, Peng;Xiong, Yuanqiang;Zhang, Cuiling;
10:516:4 UV-irradiation-enhanced ferromagnetism of barium vanadate (Ba3V2O8) nanoflowers
DOI:10.1016/j.jallcom.2012.10.152 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Guo, Donglin;Hu, Chenguo;Xi, Yi;
10:516:5 Influence of Selective Nucleation on the One Step Chemical Bath Deposition of CdS/ZnO and CdS/ZnS Composite Films
DOI:10.1021/cm101248r JN:CHEMISTRY OF MATERIALS PY:2010
TC:11 AU: Kokotov, Michael;Hodes, Gary;
10:516:6 Hydrothermal synthesis of MgCO3 and its optical properties
DOI:10.1016/j.jallcom.2011.04.064 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:1 AU: Ni, Shibing;Li, Tao;Yang, Xuelin;
10:516:7 High-pressure behavior of otavite (CdCO3)
DOI:10.1016/j.jallcom.2010.08.090 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Minch, R.;Seoung, D. H.;Ehm, L.;Winkler, B.;Knorr, K.;Peters, L.;Borkowski, L. A.;Parise, J. B.;Lee, Y.;Dubrovinsky, L.;Depmeier, W.;
10:516:8 Synthesis of Co-3(OH)(2)V2O7 center dot 1.7H(2)O nanosheets and its application in lithium ion batteries
DOI:10.1016/j.matlet.2011.05.065 JN:MATERIALS LETTERS PY:2011
TC:0 AU: Ni, Shibing;Li, Tao;Yang, Xuelin;
10:516:9 Shape- and size controlled synthesis of CdCO3 in situ-doped-Er3+
DOI:10.1016/j.matlet.2014.01.042 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Chavez Portillo, M.;Chaltel Lima, L. A.;Pena Rosas, U.;Hernandez Tellez, G.;Gutierrez Perez, R.;Portillo Moreno, O.;
10:516:10 Optical properties of Zn-3(OH)(2)V2O7 center dot nH(2)O nanosheets
DOI:10.1016/j.matchemphys.2010.07.065 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:5 AU: Ni, Shibing;Wang, Xinghui;Sun, Xiaolei;Yang, Feng;Liu, Yingqi;He, Deyan;
10:516:11 Vanadium oxide nanodisks: Synthesis, characterization, and electrochemical properties
DOI:10.1016/j.materresbull.2011.09.025 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:5 AU: Ren, Ling;Cao, Minhua;Shi, Shufeng;Hu, Changwen;
10:516:12 Synthesis of MgCO3 microcrystals at 160 degrees C starting from various magnesium sources
DOI:10.1016/j.matlet.2010.03.042 JN:MATERIALS LETTERS PY:2010
TC:6 AU: Xing, Zheng;Hao, Qin;Ju, Zhicheng;Xu, Liqiang;Qian, Yitai;
10:517:1 Structural Characterisation of ZnO Particles Obtained by the Emulsion Precipitation Method
DOI:10.1155/2012/656353 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Kolodziejczak-Radzimska, Agnieszka;Markiewicz, Ewa;Jesionowski, Teofil;
10:517:2 A simple robust method for synthesis of metallic copper nanoparticles of high antibacterial potency against E. coli
DOI:10.1088/0957-4484/23/8/085103 JN:NANOTECHNOLOGY PY:2012
TC:36 AU: Chatterjee, Arijit Kumar;Sarkar, Raj Kumar;Chattopadhyay, Asoke Prasun;Aich, Pulakesh;Chakraborty, Ruchira;Basu, Tarakdas;
10:517:3 Moderating effect of ammonia on particle growth and stability of quasi-monodisperse silver nanoparticles synthesized by the Turkevich method
DOI:10.1016/j.jcis.2011.04.099 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:20 AU: Gorup, Luiz F.;Longo, Elson;Leite, Edson R.;Camargo, Emerson R.;
10:517:4 Biopolymer-assisted in situ route toward Cu hollow spheres as antibacterial materials
DOI:10.1016/j.matlet.2014.07.088 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Cai, Aijun;Sun, Yanfeng;Chang, Yongfang;Guo, Aiying;Du, Liqiang;
10:517:5 Structural, spectroscopic and biological investigation of copper oxides nanoparticles with various capping agents
DOI:10.1016/j.matchemphys.2014.02.049 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:5 AU: Nowak, A.;Szade, J.;Talik, E.;Ratuszna, A.;Ostafin, M.;Peszke, J.;
10:517:6 Fast synthesis of DNA-assisted flower-like ZnO superstructures with improved photocatalytic and antibacterial performances
DOI:10.1016/j.matlet.2013.08.085 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Cai, Aijun;Guo, Aiying;Chang, Yongfang;Sun, Yanfeng;Xing, Shengtao;Ma, Zichuan;
10:517:7 Synthesis and antibacterial activity of mesoporous zinc oxide particle with high specific surface area
DOI:10.1016/j.matlet.2013.09.028 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Zhang, Wen;Tu, Guoping;Zhang, Huaji;Zheng, Ying;Yang, LiLi;
10:517:8 Synergistic adsorption of As(V) from aqueous solution onto mesoporous silica decorated orderly with Al2O3 and Fe2O3 nanoparticles
DOI:10.1016/j.jcis.2013.05.055 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:5 AU: Li, Guoliang;Lan, Jing;Liu, Jiyan;Jiang, Guibin;
10:517:9 A novel arsenic removal process for water using cupric oxide nanoparticles
DOI:10.1016/j.jcis.2013.01.041 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:18 AU: Reddy, K. J.;McDonald, K. J.;King, H.;
10:517:10 Growth and Structure of Pure ZnO Micro/Nanocombs
DOI:10.1155/2012/797935 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:4 AU: Xu, Tengfei;Ji, Pengfei;He, Meng;Li, Jianye;
10:517:11 Monodispersed hollow microsphere of ZnO mesoporous nanopieces: Preparation, growth mechanism and photocatalytic performance
DOI:10.1016/j.materresbull.2010.06.016 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:10 AU: Zhu, Qiyong;Chen, Jie;Zhu, Qing;Cui, Yuming;Liu, Lei;Li, Bo;Zhou, Xingfu;
10:517:12 Mechanism of antibacterial activity of copper nanoparticles
DOI:10.1088/0957-4484/25/13/135101 JN:NANOTECHNOLOGY PY:2014
TC:15 AU: Chatterjee, Arijit Kumar;Chakraborty, Ruchira;Basu, Tarakdas;
10:517:13 Nanostructured ZnO Arrays with Self-ZnO Layer Created Using Simple Electrostatic Layer-by-Layer Assembly
DOI:10.1155/2012/131672 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Huh, PilHo;Kim, Seong-Cheol;
10:518:1 Unexpected magnetic behavior of Cu-doped CeO2
DOI:10.1063/1.3383238 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Slusser, Paul;Kumar, Dhananjay;Tiwari, Ashutosh;
10:518:2 Self-assembling of strain-induced Y2O3 nanostructures grown on LaAlO3 by photo-assisted MOCVD
DOI:10.1016/j.apsusc.2012.10.115 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Li, Wei;Li, Shanwen;Li, Guoxing;Zhang, Baolin;Chou, Penchu;
10:518:3 Nanoscale strain-induced pair suppression as a vortex-pinning mechanism in high-temperature superconductors
DOI:10.1038/NMAT3247 JN:NATURE MATERIALS PY:2012
TC:68 AU: Llordes, A.;Palau, A.;Gazquez, J.;Coll, M.;Vlad, R.;Pomar, A.;Arbiol, J.;Guzman, R.;Ye, S.;Rouco, V.;Sandiumenge, F.;Ricart, S.;Puig, T.;Varela, M.;Chateigner, D.;Vanacken, J.;Gutierrez, J.;Moshchalkov, V.;Deutscher, G.;Magen, C.;Obradors, X.;
10:518:4 Self-Organized Ce1-xGdxO2-y Nanowire Networks with Very Fast Coarsening Driven by Attractive Elastic Interactions
DOI:10.1002/smll.201001237 JN:SMALL PY:2010
TC:11 AU: Gibert, Marta;Abellan, Patricia;Benedetti, Alessandro;Puig, Teresa;Sandiumenge, Felip;Garcia, Alberto;Obradors, Xavier;
10:518:5 Interaction between solution derived BaZrO3 nanodot interfacial templates and YBa2Cu3O7 films leading to enhanced critical currents
DOI:10.1016/j.actamat.2010.12.008 JN:ACTA MATERIALIA PY:2011
TC:9 AU: Abellan, Patricia;Sandiumenge, Felip;Casanove, Marie-Jose;Gibert, Marta;Palau, Anna;Puig, Teresa;Obradors, Xavier;
10:518:6 Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires
DOI:10.1016/j.apsusc.2010.12.158 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Kar, J. P.;Das, S. N.;Choi, J. H.;Lee, T. I.;Seo, J.;Lee, T.;Myoung, J. M.;
10:518:7 In-situ synchrotron x-ray study of the crystallization behavior of Ce0.9La0.1O2 (-) (x) thin films deposited on NiW alloy substrates by chemical solution method
DOI:10.1016/j.matlet.2011.05.072 JN:MATERIALS LETTERS PY:2011
TC:7 AU: Zhao, Y.;Grivel, J. C.;Abrahamsen, A. B.;Pallewatta, P. G. A. P.;He, D.;Bednarcik, J.;Zimmermann, M. V.;
10:518:8 Origin of weak-link behavior of grain boundaries in superconducting cuprates and pnictides
DOI:10.1063/1.3367723 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Deutscher, Guy;
10:518:9 Effects of Cu doping on the magnetism of CeO2 nanoparticles
DOI:10.1063/1.3676223 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Seehra, M. S.;Suri, S.;Singh, V.;
10:518:10 A simple method to obtain Fe-doped CeO2 nanocrystals at room temperature
DOI:10.1016/j.jmmm.2012.09.007 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:4 AU: Almeida, J. M. A.;Santos, P. E. C.;Cardoso, L. P.;Meneses, C. T.;
10:518:11 Thermodynamic stability analysis of isometric and elongated epitaxial Ce1-xGdxO2-y nanostructures on perovskite substrates
DOI:10.1103/PhysRevB.82.165415 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Gibert, Marta;Garcia, Alberto;Puig, Teresa;Obradors, Xavier;
10:518:12 The role of Cu-O bond length fluctuations in the high temperature superconductivity mechanism
DOI:10.1063/1.4726157 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Deutscher, Guy;
10:518:13 Structural, magnetic and charge-related properties of nano-sized cerium manganese oxide, a dilute magnetic oxide semiconductor
DOI:10.1016/j.mssp.2013.10.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Saravanakumar, S.;Sasikumar, S.;Israel, S.;Pradhiba, G. R.;Saravanan, R.;
10:519:1 Visualization of nanomechanical mapping on polymer nanocomposites by AFM force measurement
DOI:10.1016/j.polymer.2010.03.052 JN:POLYMER PY:2010
TC:20 AU: Wang, Dong;Fujinami, So;Nakajima, Ken;Inukai, Shigeki;Ueki, Hiroyuki;Magario, Akira;Noguchi, Toru;Endo, Morinobu;Nishi, Toshio;
10:519:2 Effect of Ag doping on the performance of ZnO thin film transistor
DOI:10.1016/j.tsf.2011.04.064 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Lee, Deuk-Hee;Park, Ki-Ho;Kim, Sangsig;Lee, Sang Yeol;
10:519:3 Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires
DOI:10.1016/j.apsusc.2010.12.139 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Jumidali, Mohd Muzafa;Sulieman, Kamal Mahir;Hashim, Md Roslan;
10:519:4 Surface analysis of Ga-doped 3D urchin-like ZnO structure and density functional theory investigation of the quenching in photoluminescence property
DOI:10.1016/j.jallcom.2014.03.114 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Yu Lingmin;Fan Xinhui;Lei Man;Wei Jiansong;Jin Yao Hua;Yan Wen;
10:519:5 Investigation on nano-frictional performance of glucose-assisted ZnO sol-gel film on quartz substrate
DOI:10.1016/j.wear.2012.07.012 JN:WEAR PY:2012
TC:0 AU: Zhang, Yidong;Mi, Liwei;Li, Qingyu;Zheng, Zhi;
10:519:6 Phase behavior and nanomechanical mapping of block ionomer complexes
DOI:10.1039/c2sm27512k JN:SOFT MATTER PY:2013
TC:1 AU: Wu, Shuying;Guo, Qipeng;Zhang, Taiye;Mai, Yiu-Wing;
10:519:7 Carbon nanotube enables quantum leap in oil recovery
DOI:10.1016/j.materresbull.2011.04.028 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:1 AU: Ito, Masaei;Noguchi, Toru;Ueki, Hiroyuki;Takeuchi, Kenji;Endo, Morinobu;
10:519:8 Interfacial shear strengths between carbon nanotubes
DOI:10.1088/0957-4484/21/11/115704 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Li, Chengxiang;Liu, Yilun;Yao, Xuefeng;Ito, Masaei;Noguchi, Toru;Zheng, Quanshui;
10:519:9 Analysis of the properties of germanium/zinc silicate film growth through a simple thermal evaporation technique for hydrogen gas sensing and deep UV photodetector application
DOI:10.1016/j.mssp.2012.12.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Jumidali, Mohd Muzafa;Hashim, M. R.;Al-Heuseen, K.;
10:520:1 Microstructure and magnetic properties in Sn1-xFexO2 (x=0.01, 0.05, 0.10) nanoparticles synthesized by hydrothermal method
DOI:10.1016/j.jallcom.2009.11.044 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Fang, Limei;Zu, Xiaotao;Liu, Chunming;Li, Zhijie;Peleckis, Germanas;Zhu, Sha;Liu, Huakun;Wang, Lumin;
10:520:2 Structural disorder of ball-milled, nanosized, Fe-doped SnO2: X-ray diffraction and Mossbauer spectroscopy characterization
DOI:10.1007/s10853-011-6088-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:2 AU: Ribeiro, Thiago S.;Sasaki, Jose M.;Vasconcelos, Igor F.;
10:520:3 The influence of phosphate on crystal grain growth of nanosized SnO2
DOI:10.1016/j.jallcom.2009.12.131 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Wang, Cici;Li, Jibiao;Zhang, Yanfeng;Wei, Yu;Liu, Jingze;
10:520:4 Crystallographic and magnetic properties of Fe-doped SnO2 nanopowders obtained by a sol-gel method
DOI:10.1007/s10853-010-4454-z JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:9 AU: Beltran, J. J.;Sanchez, L. C.;Osorio, J.;Tirado, L.;Baggio-Saitovitch, E. M.;Barrero, C. A.;
10:520:5 Highly homogeneous nanostructured templates based on environmental friendly microemulsion for nanomaterials processing
DOI:10.1016/j.matlet.2014.06.072 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Rogozea, Elena Adina;Olteanu, Nicoleta Liliana;Crisciu, Adrian Victor;Petcu, Adina Roxana;Mihaly, Maria;
10:520:6 Influence of substrate on the growth of microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition
DOI:10.1016/j.mssp.2012.02.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Qi, Limin;Hu, Zhijuan;Li, Wang;Qin, Xiaomei;Du, Guoping;Han, Weizhi;Shi, Wangzhou;
10:520:7 Structural investigations of nanomixed oxides SnO2-xAl(2)O(3) prepared by sol-gel technique
DOI:10.1016/j.jallcom.2010.07.170 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Heiba, Z. K.;Ahmed, M. A.;Ahmed, Sameh I.;
10:520:8 Fabrication of microcrystalline silicon solar cells on a SnO2 coated substrate using seed layer insertion
DOI:10.1016/j.solmat.2010.04.061 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:5 AU: Im, Jong-San;Park, San Il;Jeon, Jin-Wan;Lim, Koeng Su;
10:520:9 Structural and luminescence characteristics of SnO2:Eu and SnO2:Eu,Sb nanophosphors upon annealing at high temperatures
DOI:10.1016/j.matchemphys.2011.06.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Kiisk, Valter;Kangur, Triin;Paalo, Madis;Taette, Tanel;Lange, Sven;Pikker, Siim;Sildos, Ilmo;
10:520:10 The hindering function of phosphate on the grain growth behavior of nanosized zirconia powders calcined at high temperatures
DOI:10.1016/j.ceramint.2010.10.015 JN:CERAMICS INTERNATIONAL PY:2011
TC:0 AU: Liu, Juan;Lu, Bin;Liu, Jingze;Zhang, Yanfeng;Wei, Yu;
10:520:11 NiO-silica based nanostructured materials obtained by microemulsion assisted sol-gel procedure
DOI:10.1016/j.materresbull.2011.05.031 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:8 AU: Mihaly, M.;Comanescu, A. F.;Rogozea, A. E.;Vasile, E.;Meghea, A.;
10:521:1 Mechanical properties of ZnO thin films deposited on polyester substrates used in flexible device applications
DOI:10.1016/j.tsf.2010.07.081 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Sierros, Konstantinos A.;Banerjee, Derrick A.;Morris, Nicholas J.;Cairns, Darran R.;Kortidis, Ioannis;Kiriakidis, George;
10:521:2 Ceramic Thin Films on Plastics: A Versatile Transfer Process for Large Area as Well as Patterned Coating
DOI:10.1021/am3019993 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:8 AU: Kozuka, Hiromitsu;Fukui, Takafumi;Takahashi, Mitsuru;Uchiyama, Hiroaki;Tsuboi, Shohei;
10:521:3 Wet processing for the fabrication of ceramic thin films on plastics
DOI:10.1557/jmr.2013.13 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:6 AU: Kozuka, Hiromitsu;
10:521:4 Dip pen nanolithography and transfer of ZnO patterns on plastics for large-area flexible optoelectronic applications
DOI:10.1016/j.tsf.2013.12.018 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Cronin, S. D.;Sabolsky, K.;Sabolsky, E. M.;Sierros, K. A.;
10:521:5 Controlled buckling behavior of patterned oxide structures on compliant substrates for flexible optoelectronics
DOI:10.1016/j.tsf.2013.05.173 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Bejitual, T. S.;Morris, N. J.;Cairns, D. R.;Sierros, K. A.;
10:521:6 Tribological investigation of piezoelectric ZnO films for rolling contact-based energy harvesting and sensing applications
DOI:10.1016/j.tsf.2013.05.149 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Kiriakidis, G.;Kortidis, I.;Cronin, S. D.;Morris, N. J.;Cairns, D. R.;Sierros, K. A.;
10:521:7 Large area ceramic thin films on plastics: A versatile route via solution processing
DOI:10.1063/1.3676281 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Kozuka, H.;Yamano, A.;Fukui, T.;Uchiyama, H.;Takahashi, M.;Yoki, M.;Akase, T.;
10:521:8 Flexibility and electrical stability of polyester-based device electrodes under monotonic and cyclic buckling conditions
DOI:10.1016/j.tsf.2012.09.082 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Potoczny, G. A.;Bejitual, T. S.;Abell, J. S.;Sierros, K. A.;Cairns, D. R.;Kukureka, S. N.;
10:522:1 Influence of doping concentrations on the aluminum doped zinc oxide thin films properties for ultraviolet photoconductive sensor applications
DOI:10.1016/j.optmat.2009.12.005 JN:OPTICAL MATERIALS PY:2010
TC:56 AU: Mamat, M. H.;Sahdan, M. Z.;Khusaimi, Z.;Ahmed, A. Zain;Abdullah, S.;Rusop, M.;
10:522:2 Coexistence of ultraviolet photo-response and room-temperature ferromagnetism in polycrystalline ZnO thin films
DOI:10.1016/j.matlet.2010.03.011 JN:MATERIALS LETTERS PY:2010
TC:5 AU: Kapilashrami, Mukes;Xu, Jun;Biswas, Anis;Tamaki, Takahiko;Sharma, Parmanand;Rao, K. V.;Belova, Lyuba;
10:522:3 Photoconductive characteristics of ZnO: Al network films sputter-deposited at different deposition temperatures
DOI:10.1016/j.matlet.2013.04.105 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Liu, Jinping;Qiu, Hong;Zou, Guoshou;Hu, Bin;Yang, Zhiwei;
10:522:4 Structural, optical and photocurrent properties of undoped and Al-doped ZnO thin films deposited by sol-gel spin coating technique
DOI:10.1016/j.matlet.2014.07.099 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Mahroug, A.;Boudjadar, S.;Hamrit, S.;Guerbous, L.;
10:522:5 Structural, electrical and photoluminescence properties of ZnO:Al network films grown on nanochannel Al2O3 substrates by direct current magnetron sputtering with an oblique target
DOI:10.1016/j.matchemphys.2012.01.076 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Zuo, Yueping;Qiu, Hong;Chen, Xiaobai;He, Jianping;
10:522:6 Effect of Al dopant concentration on structural, optical and photoconducting properties in nanostructured zinc oxide thin films
DOI:10.1016/j.mssp.2012.10.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Ganesh, T.;Rajesh, S.;Xavier, Francis P.;
10:522:7 Directed photoluminescent emission of ZnO tetrapods on biotemplated Al2O3
DOI:10.1016/j.optmat.2013.10.035 JN:OPTICAL MATERIALS PY:2013
TC:2 AU: Rambo, Carlos R.;Hotza, Dachamir;da Cunha, Carlo R.;Zollfrank, Cordt;
10:522:8 Preparation and thermal stability of F-doped ZnO transparent conducting thin films
DOI:10.1016/j.optmat.2013.02.003 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Cao, L.;Zhu, L. P.;Chen, W. F.;Ye, Z. Z.;
10:522:9 Microchanneled biomorphic AlN-coated Al2O3 by pressureless infiltration-nitridation
DOI:10.1016/j.ceramint.2014.04.015 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Rambo, Carlos R.;Hotza, Dachamir;
10:522:10 Effect of Al dopant concentration on structural, optical and photoconducting properties in nanostructured zinc oxide thin films (vol 16, pg 295, 2013)
DOI:10.1016/j.mssp.2013.07.001 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:0 AU: Ganesh, T.;Rajesh, S.;Xavier, Francis P.;
10:523:1 Porous Fe3O4 nanoparticles: Synthesis and application in catalyzing epoxidation of styrene
DOI:10.1016/j.jcis.2011.08.066 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:21 AU: Huang, Changliang;Zhang, Hongye;Sun, Zhenyu;Zhao, Yanfei;Chen, Sha;Tao, Ranting;Liu, Zhimin;
10:523:2 Superior ethanol-sensing performance research of WO3 center dot 0.33H(2)O doped chrysanthemum-like NiO composite
DOI:10.1016/j.matlet.2013.06.065 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Lin, Liyang;Liu, Tianmo;Zhang, Yu;Hussain, Shahid;Wu, Shufang;Zeng, Wen;
10:523:3 Synthesis of NiO-Al2O3 nanocomposites by sol-gel process and their use as catalyst for the oxidation of styrene
DOI:10.1016/j.jallcom.2014.05.059 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Yadav, Sudheer Kumar;Jeevanandam, P.;
10:523:4 Novel NiO nanodisks and hollow nanodisks derived from Ni(OH)(2) nanostructures and their catalytic performance in epoxidation of styrene
DOI:10.1016/j.matlet.2012.04.063 JN:MATERIALS LETTERS PY:2012
TC:13 AU: Ren, Shutong;Yang, Chao;Sun, Chao;Hui, Yonghai;Dong, Zejuan;Wang, Jide;Su, Xintai;
10:523:5 Synthesis, characterization and photoluminescence of ZnO spindles by polyvinylpyrrolidone-assisted low-temperature wet-chemistry process
DOI:10.1016/j.jcrysgro.2011.10.028 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:6 AU: Gu, Pengfei;Wang, Xudong;Li, Tao;Meng, Huimin;Yu, Hongying;Fan, Zishuan;
10:523:6 A simple preparation of ZnO nanocones and exposure to formaldehyde
DOI:10.1016/j.matlet.2014.04.115 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Hussain, Shahid;Liu, Tianmo;Kashif, M.;Cao, Shixiu;Zeng, Wen;Xu, Sibo;Naseer, Khalid;Hashim, Uda;
10:523:7 Effect of morphology and solvent on two-photon absorption of nano zinc oxide
DOI:10.1016/j.materresbull.2013.01.052 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:7 AU: Kavitha, M. K.;Haripadmam, P. C.;Gopinath, Pramod;Krishnan, Bindu;John, Honey;
10:523:8 Polyvinyl pyrrolidone assisted low temperature synthesis of ZnO nanocones and its linear and nonlinear optical studies
DOI:10.1016/j.materresbull.2013.08.056 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:7 AU: Kavitha, M. K.;John, Honey;Gopinath, Pramod;
10:523:9 Calcium oxide supported gold nanoparticles as catalysts for the selective epoxidation of styrene by t-butyl hydroperoxide
DOI:10.1016/j.jcis.2013.10.016 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:7 AU: Dumbre, Deepa K.;Choudhary, Vasant R.;Patil, Nilesh S.;Uphade, Balu S.;Bhargava, Suresh K.;
10:524:1 Simple synthesis of flower-like ZnO by a dextran assisted solution route and their photocatalytic degradation property
DOI:10.1016/j.matlet.2013.06.054 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Qi, Lei;Li, Houshen;Dong, Lin;
10:524:2 Improved photocatalytic performance of ZnO prepared by sol-gel method with the assistance of CTAB
DOI:10.1016/j.matlet.2012.10.040 JN:MATERIALS LETTERS PY:2013
TC:14 AU: Zhong, Jun Bo;Li, Jian Zhang;Xiao, Zheng Hua;Hu, Wei;Zhou, Xiao Bei;Zheng, Xing Wen;
10:524:3 Preparation, characterization and photocatalytic activity of hexagonal ZnO nanoparticles
DOI:10.1016/j.matlet.2014.04.155 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Messali, M.;Al Wadaani, F.;Oudghiri-Hassani, H.;Rakass, S.;Al Amri, S.;Benaissa, M.;Abboudi, M.;
10:524:4 Effect of supporting and hybridizing of FeO and ZnO semiconductors onto an Iranian clinoptilolite nano-particles and the effect of ZnO/FeO ratio in the solar photodegradation of fish ponds waste water
DOI:10.1016/j.mssp.2014.08.030 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:7 AU: Bahrami, Mohsen;Nezamzadeh-Ejhieh, Alireza;
10:524:5 Template synthesis of zinc oxide nanoparticles entrapped in the zeolite Y matrix and applying them for thermal control paint
DOI:10.1016/j.mssp.2012.08.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:9 AU: Fereshteh, Zeinab;Loghman-Estarki, Mohammad Reza;Razavi, Reza Shoja;Taheran, Mehrdad;
10:524:6 Environmentally friendly synthetic route to the monodispersed ZnO nanoparticles on large-scale
DOI:10.1016/j.matlet.2014.06.118 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Chen, Yan-Ming;Jia, Hong-Wei;
10:525:1 In situ thermal residual stress evolution in ultrathin ZnO and Ag films studied by synchrotron x-ray diffraction
DOI:10.1016/j.tsf.2011.07.060 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Renault, P. O.;Krauss, C.;Le Bourhis, E.;Geandier, G.;Benedetto, A.;Grachev, S. Y.;Barthel, E.;
10:525:2 Influences of in situ annealing on microstructure, residual stress and electrical resistivity for sputter-deposited Be coating
DOI:10.1016/j.jallcom.2014.03.128 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Luo, B. C.;Li, K.;Tan, X. L.;Zhang, J. Q.;Luo, J. S.;Jiang, X. D.;Wu, W. D.;Tang, Y. J.;
10:525:3 Comparative study of ultraviolet detectors based on ZnO nanostructures grown on different substrates
DOI:10.1063/1.4757619 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:9 AU: Abdulgafour, H. I.;Hassan, Z.;Ahmed, N. M.;Yam, F. K.;
10:525:4 Facile synthesis of ZnO nanostructures and investigation of structural and optical properties
DOI:10.1016/j.matchar.2013.10.008 JN:MATERIALS CHARACTERIZATION PY:2013
TC:1 AU: Tripathi, Neeti;Rath, Shyama;
10:525:5 X-ray diffraction study of thermal stress relaxation in ZnO films deposited by magnetron sputtering
DOI:10.1016/j.tsf.2010.07.013 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Conchon, F.;Renault, P. O.;Le Bourhis, E.;Krauss, C.;Goudeau, P.;Barthel, E.;Grachev, S. Yu;Sondergard, E.;Rondeau, V.;Gy, R.;Lazzari, R.;Jupille, J.;Brun, N.;
10:525:6 One-step synthesis of flower-like Au-ZnO microstructures at room temperature and their photocatalytic properties
DOI:10.1007/s00339-012-7441-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:4 AU: Chen, Cong;Lu, Yangfan;He, Haiping;Wu, Kewei;Ye, Zhizhen;
10:525:7 ZnO nanocoral reef grown on porous silicon substrates without catalyst
DOI:10.1016/j.jallcom.2011.02.100 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Abdulgafour, H. I.;Yam, F. K.;Hassan, Z.;AL-Heuseen, K.;Jawad, M. J.;
10:525:8 Thick beryllium coatings by ion-assisted magnetron sputtering
DOI:10.1557/jmr.2011.378 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:2 AU: Xu, Hongwei;Alford, Craig;Chason, Eric;Detor, Andrew J.;Fuller, Tim;Hamza, Alex V.;Hayes, Jeff;Moreno, Kari A.;Nikroo, Abbas;van Buuren, Tony;Wang, Yinmin;Wu, Jun-jim;Wilkens, Heather;Youngblood, Kelly P.;
10:525:9 Overview and applicability of residual stress estimation of film-substrate structure
DOI:10.1016/j.tsf.2011.04.220 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Chou, Tsung-Lin;Yang, Shin-Yueh;Chiang, Kuo-Ning;
10:526:1 Synthesis and Characterization of One-Dimensional Ag-Doped ZnO/Ga-Doped ZnO Coaxial Nanostructure Diodes
DOI:10.1021/am500470y JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:5 AU: Chiu, Hsien-Ming;Chang, Yu-Tsui;Wu, Wen-Wei;Wu, Jenn-Ming;
10:526:2 Synthesis, photoluminescence and growth mechanism of ZnO nanorods via RTIL-assisted solid-state reaction
DOI:10.1016/j.matlet.2012.11.129 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Hou, Xianming;Wang, Lixia;Hao, Jingcheng;
10:526:3 ZnO Coaxial Nanorod Homojunction UV Light-Emitting Diodes Prepared by Aqueous Solution Method
DOI:10.1002/smll.201102369 JN:SMALL PY:2012
TC:16 AU: Xuan Sang Nguyen;Tay, Chuan Beng;Fitzgerald, Eugene A.;Chua, Soo Jin;
10:526:4 Electrical and structural properties of antimony-doped p-type ZnO nanorods with self-corrugated surfaces
DOI:10.1088/0957-4484/23/49/495712 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Kang, Jang-Won;Choi, Yong-Seok;Choe, Minhyeok;Kim, Na-Yeong;Lee, Takhee;Kim, Bong-Joong;Tu, C. W.;Park, Seong-Ju;
10:526:5 Electroluminescence emission from light-emitting diode of p-ZnO/(InGaN/GaN) multiquantum well/n-GaN
DOI:10.1063/1.3601915 JN:APPLIED PHYSICS LETTERS PY:2011
TC:10 AU: Park, Tae-Young;Choi, Yong-Seok;Kim, Sang-Mook;Jung, Gun-Young;Park, Seong-Ju;Kwon, Bong-Joon;Cho, Yong-Hoon;
10:526:6 Ionic liquid assisted synthesis of nano-porous TiO2 and studies on confined ionic liquid
DOI:10.1016/j.matlet.2012.07.025 JN:MATERIALS LETTERS PY:2012
TC:14 AU: Verma, Yogendra Lal;Singh, Manish Pratap;Singh, Rajendra Kumar;
10:526:7 Structural and electrical properties of phosphorous-doped p-type ZnSxO1-x film grown by co-sputtering
DOI:10.1016/j.scriptamat.2014.04.015 JN:SCRIPTA MATERIALIA PY:2014
TC:0 AU: Kang, Jang-Won;Choi, Yong-Seok;Kim, Byeong-Hyeok;Kim, Na-Yeong;Tu, C. W.;Park, Seong-Ju;
10:526:8 A facile and green approach for the fabrication of ZnO nanorods using bamboo charcoal as the template
DOI:10.1016/j.matlet.2010.08.073 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Gong, Liangyu;Jiang, Haiyan;Zhu, FengHua;
10:526:9 Fabrication of ZnO/alpha-NPD:F-4-TCNQ based inorganic-organic hybrid junction: Effect of doping of organic layer on the diode like characteristics
DOI:10.1016/j.tsf.2010.03.123 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Kumar, Rajesh;Khare, Neeraj;Bhalla, G. L.;Kamalasanan, M. N.;
10:527:1 Solution growth of functional zinc oxide films and nanostructures
DOI:10.1557/mrs2010.507 JN:MRS BULLETIN PY:2010
TC:30 AU: Lincot, D.;
10:527:2 Shape controllability and photoluminescence properties of ZnO nanorods grown by chemical bath deposition
DOI:10.1016/j.tsf.2013.05.174 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Terasako, Tomoaki;Murakami, Toshihiro;Yagi, Masakazu;Shirakata, Sho;
10:527:3 Porous ZnO platelets via controlled thermal decomposition of zinc glycerolate
DOI:10.1016/j.jallcom.2011.10.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Dong, Hailong;Feldmann, Claus;
10:527:4 Photoluminescence, photoacoustic and Raman spectra of zinc oxide films grown by LP-MOCVD using diethylzinc and water as precursors
DOI:10.1016/j.tsf.2010.06.061 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Terasako, Tomoaki;Yamanaka, Takahiro;Yura, Shinichiro;Yagi, Masakazu;Shirakata, Sho;
10:527:5 Effect of precipitation temperature and organic additives on size and morphology of ZnO nanoparticles
DOI:10.1557/jmr.2012.58 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:1 AU: Yildirim, Ozlem Altintas;Durucan, Caner;
10:527:6 Photothermal investigation Study of ZnO thin films: effects of Zn and O polar substrate
DOI:10.1007/s00339-013-7614-6 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Ktifa, S.;Souissi, A.;Saadallah, F.;Sallet, V.;Oueslati, M.;Yacoubi, N.;
10:527:7 Synthesis of zinc oxide nanoparticles elaborated by microemulsion method
DOI:10.1016/j.jallcom.2010.07.125 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Yildirim, Ozlem Altintas;Durucan, Caner;
10:527:8 Optical characterization of ZnO nanopillars on Si and macroporous periodic Si structure
DOI:10.1063/1.4729260 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Castro Meira, M. V.;Ferreira da Silva, A.;Baldissera, G.;Persson, C.;Freitas, J. A., Jr.;Gutman, N.;Sa'ar, A.;Nur, O.;Willander, M.;
10:527:9 Effect of oxygen injection on the size and compositional evolution of ZnO/Zn(OH)(2) nanocomposite synthesized by pulsed laser ablation in distilled water
DOI:10.1007/s11051-011-0359-2 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:9 AU: Singh, S. C.;
10:527:10 Nanosized hexagonal plateletlike ZnO for nanophosphor applications
DOI:10.1116/1.3292573 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:2 AU: Han, Gui;Shibukawa, Atsushi;Okada, Morihiro;Neo, Yoichiro;Aoki, Toru;Mimura, Hidenori;
10:527:11 Properties of V-Ce mixed-oxide thin films deposited by RF magnetron sputtering
DOI:10.1016/j.mssp.2013.10.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Malini, D. Rachel;Sanjeeviraja, C.;
10:527:12 Face-selective electrostatic control of hydrothermal zinc oxide nanowire synthesis
DOI:10.1038/NMAT3069 JN:NATURE MATERIALS PY:2011
TC:123 AU: Joo, Jaebum;Chow, Brian Y.;Prakash, Manu;Boyden, Edward S.;Jacobson, Joseph M.;
10:528:1 Synthesis and properties of boron doped ZnO nanorods on silicon substrate by low-temperature hydrothermal reaction
DOI:10.1016/j.apsusc.2011.01.081 JN:APPLIED SURFACE SCIENCE PY:2011
TC:16 AU: Yu, Qi;Li, Liuan;Li, Hongdong;Gao, Shiyong;Sang, Dandan;Yuan, Jujun;Zhu, Pinwen;
10:528:2 Novel synthesis of aligned Zinc oxide nanorods on a glass substrate by sonicated sol-gel immersion
DOI:10.1016/j.matlet.2010.02.053 JN:MATERIALS LETTERS PY:2010
TC:30 AU: Mamat, M. H.;Khusaimi, Z.;Musa, M. Z.;Sandan, M. Z.;Rusop, M.;
10:528:3 UV Enhanced Oxygen Response Resistance Ratio of ZnO Prepared by Thermally Oxidized Zn on Sapphire Substrate
DOI:10.1155/2013/531328 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:0 AU: Yu, Cheng-Chang;Hsu, Yu-Ting;Lan, Wen-How;Shih, Ming-Chang;Hong, Jin-Hua;Huang, Kai-Feng;Huang, Chien-Jung;
10:528:4 Fabrication of thin, dense and small-diameter zinc oxide nanorod array-based ultraviolet photoconductive sensors with high sensitivity by catalyst-free radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2012.11.105 JN:MATERIALS LETTERS PY:2013
TC:7 AU: Mamat, M. H.;Hafizah, N. N.;Rusop, M.;
10:528:5 Growth and characteristics of ZnO films on growth side of freestanding diamond substrate dependent on buffer layer thickness
DOI:10.1016/j.tsf.2010.03.071 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Gao, Shiyong;Li, Hongdong;Liu, Junwei;Li, Yingai;Lue, Xianyi;Yang, Xuxin;Ren, Shiyuan;Zou, Guangtian;
10:528:6 Site-specific multi-stage CVD of large-scale arrays of ultrafine ZnO nanorods
DOI:10.1088/0957-4484/22/13/135603 JN:NANOTECHNOLOGY PY:2011
TC:8 AU: Zhang, X. X.;Zhao, D.;Gao, M.;Dong, H. B.;Zhou, W. Y.;Xie, S. S.;
10:528:7 ZnO Nanoparticles on Si, Si/Au, and Si/Au/ZnO Substrates by Mist-Atomisation
DOI:10.1155/2012/872856 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Khusaimi, Z.;Mamat, M. H.;Abdullah, N.;Rusop, M.;
10:528:8 Hydrothermal synthesis, characterization and properties of boron-doped ZnO sheets grown on p-diamond film
DOI:10.1016/j.matlet.2014.04.184 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Yu, Qi;Li, Hongdong;Wang, Qiliang;Cheng, Shaoheng;Jiang, Liyun;Zhang, Yingtang;Ai, Taotao;Guo, CongSheng;
10:528:9 A novel method for synthesis of well-aligned hexagonal cone-shaped ZnO nanostructures in field emission applications
DOI:10.1016/j.matlet.2014.03.183 JN:MATERIALS LETTERS PY:2014
TC:9 AU: Rouhi, J.;Alimanesh, M.;Mahmud, S.;Dalvand, R. A.;Ooi, C. H. Raymond;Rusop, M.;
10:529:1 Universal Medium-Range Order of Amorphous Metal Oxides
DOI:10.1103/PhysRevLett.111.155502 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:1 AU: Nishio, Kengo;Miyazaki, Takehide;Nakamura, Hisao;
10:529:2 Weak localization and percolation effects in annealed In2O3-ZnO thin films
DOI:10.1063/1.3635375 JN:AIP ADVANCES PY:2011
TC:1 AU: Shinozaki, B.;Ezaki, S.;Hidaka, K.;Makise, K.;Asano, T.;Yano, K.;Nakamura, H.;
10:529:3 Electronic conduction in amorphous and polycrystalline zinc-indium oxide films
DOI:10.1063/1.3533382 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Kuznetsov, Vladimir L.;O'Neil, David H.;Pepper, Michael;Edwards, Peter P.;
10:529:4 Characterization of amorphous In2O3: An ab initio molecular dynamics study
DOI:10.1063/1.3664224 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Aliano, Antonio;Catellani, Alessandra;Cicero, Giancarlo;
10:529:5 The Structure and Properties of Amorphous Indium Oxide
DOI:10.1021/cm502689x JN:CHEMISTRY OF MATERIALS PY:2014
TC:10 AU: Buchholz, D. Bruce;Ma, Qing;Alducin, Diego;Ponce, Arturo;Jose-Yacaman, Miguel;Khanal, Rabi;Medvedeva, Julia E.;Chang, Robert P. H.;
10:529:6 Modeling amorphous thin films: Kinetically limited minimization
DOI:10.1103/PhysRevB.90.094203 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Zawadzki, Pawel P.;Perkins, John;Lany, Stephan;
10:529:7 Molecular dynamics study of amorphous Ga-doped In2O3: A promising material for phase change memory devices
DOI:10.1063/1.4818788 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Ramzan, M.;Kaewmaraya, T.;Ahuja, R.;
10:529:8 Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors
DOI:10.1103/PhysRevB.87.125203 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Deng, Hui-Xiong;Wei, Su-Huai;Li, Shu-Shen;Li, Jingbo;Walsh, Aron;
10:530:1 Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer
DOI:10.1063/1.4832237 JN:AIP ADVANCES PY:2013
TC:6 AU: El-Atab, Nazek;Rizk, Ayman;Okyay, Ali K.;Nayfeh, Ammar;
10:530:2 Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission
DOI:10.1063/1.4861590 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: El-Atab, Nazek;Ozcan, Ayse;Alkis, Sabri;Okyay, Ali K.;Nayfeh, Ammar;
10:530:3 Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
DOI:10.1063/1.4826583 JN:AIP ADVANCES PY:2013
TC:6 AU: El-Atab, Nazek;Alqatari, Samar;Oruc, Feyza B.;Souier, Tewfic;Chiesa, Matteo;Okyay, Ali K.;Nayfeh, Ammar;
10:530:4 Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer
DOI:10.1063/1.4891050 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: El-Atab, Nazek;Cimen, Furkan;Alkis, Sabri;Okyay, Ali K.;Nayfeh, Ammar;
10:530:5 Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness
DOI:10.1063/1.4866988 JN:AIP ADVANCES PY:2014
TC:0 AU: Lau, W. S.;Zhang, J.;Wan, X.;Luo, J. K.;Xu, Y.;Wong, H.;
10:530:6 Enhanced memory effect via quantum confinement in 16nm InN nanoparticles embedded in ZnO charge trapping layer
DOI:10.1063/1.4885397 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: El-Atab, Nazek;Cimen, Furkan;Alkis, Sabri;Orta, Bulend;Alevli, Mustafa;Dietz, Nikolaus;Okyay, Ali K.;Nayfeh, Ammar;
10:530:7 Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film
DOI:10.1007/s11051-012-1048-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:2 AU: Alkis, Sabri;Alevli, Mustafa;Burzhuev, Salamat;Vural, Huseyin Avni;Okyay, Ali Kemal;Ortac, Bulend;
10:530:8 Electric-field and temperature dependence of the activation energy associated with gate induced drain leakage
DOI:10.1063/1.4789382 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:4 AU: Alnuaimi, Aaesha;Nayfeh, Ammar;Koldyaev, Victor;
10:530:9 Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
DOI:10.1063/1.4891569 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Mo, Jiongjiong;Lind, Erik;Roll, Guntrade;Wernersson, Lars-Erik;
10:531:1 Optoelectronic Properties of ZnO Nanoparticle/Pentacene Heterojunction Photodiode
DOI:10.1007/s11664-014-3268-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:2 AU: Yuan, Zhaolin;Fu, Mingxing;Ren, Yajie;
10:531:2 Structural and electronic properties of SnO2
DOI:10.1016/j.jallcom.2013.05.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:6 AU: Akgul, Funda Aksoy;Gumus, Cebrail;Er, Ali O.;Farha, Ashraf H.;Akgul, Guvenc;Ufuktepe, Yuksel;Liu, Zhi;
10:531:3 p-type conduction in nitrogen-doped SnO2 films grown by thermal processing of tin nitride films
DOI:10.1007/s00339-012-7288-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Pan, S. S.;Wang, S.;Zhang, Y. X.;Luo, Y. Y.;Kong, F. Y.;Xu, S. C.;Xu, J. M.;Li, G. H.;
10:531:4 Bicolor Light-Emitting Diode Based on Zinc Oxide Nanorod Arrays and Poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene
DOI:10.1007/s11664-011-1783-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:6 AU: Song, Jizhong;He, Ying;Chen, Jie;Zhu, Di;Pan, Zhaodong;Zhang, Yaofei;Wang, Jun-An;
10:531:5 Development of new transparent conductors and device applications utilizing a multidisciplinary approach
DOI:10.1016/j.tsf.2009.10.125 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Szyszka, Bernd;Loebmann, Peer;Georg, Andreas;May, Christian;Elsaesser, Christian;
10:531:6 Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios
DOI:10.1016/j.tsf.2014.10.035 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Choi, Sujin;Kang, Jisoo;Park, Juyun;Kang, Yong-Cheol;
10:531:7 Fabrication of Bistable Switching Memory Devices Utilizing Polymer-ZnO Nanocomposites
DOI:10.1007/s11664-012-2125-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:3 AU: Kathalingam, A.;Rhee, Jin-Koo;
10:531:8 Perovskite-type transparent and conductive oxide films: Sb- and Nd-doped SrSnO3
DOI:10.1016/j.tsf.2011.03.038 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Liu, Qinzhuang;Dai, Jianming;Zhang, Xiaobo;Zhu, Guangping;Liu, Zhongliang;Ding, Guohua;
10:532:1 Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting
DOI:10.1557/JMR.2010.0017 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:29 AU: Shet, Sudhakar;Ahn, Kwang-Soon;Deutsch, Todd;Wang, Heli;Ravindra, Nuggehalli;Yan, Yanfa;Turner, John;Al-Jassim, Mowafak;
10:532:2 Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films
DOI:10.1007/s10853-010-4561-x JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:14 AU: Shet, Sudhakar;Ahn, Kwang-Soon;Wang, Heli;Nuggehalli, Ravindra;Yan, Yanfa;Turner, John;Al-Jassim, Mowafak;
10:532:3 Phase separation in Ga and N co-incorporated ZnO films and its effects on photo-response in photoelectrochemical water splitting
DOI:10.1016/j.tsf.2011.03.050 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Shet, Sudhakar;Ahn, Kwang-Soon;Nuggehalli, Ravindra;Yan, Yanfa;Turner, John;Al-Jassim, Mowafak;
10:532:4 Solution grown nanocrystalline ZnO thin films for UV emission and LPG sensing
DOI:10.1007/s10853-010-4559-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:12 AU: Patil, S. B.;Singh, A. K.;
10:532:5 Effect of compressive stress on doping efficiency of nitrogen in ZnO films
DOI:10.1016/j.optmat.2013.07.003 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Liu, Wei-Wei;Zhang, Zhen-Zhong;Yao, Bin;Shen, De-Zhen;Liu, Cheng-Lin;
10:532:6 Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique
DOI:10.1016/j.apsusc.2013.01.134 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Shet, Sudhakar;Yan, Yanfa;Ravindra, Nuggehalli;Turner, John;Al-Jassim, Mowafak;
10:532:7 An approach to enhanced acceptor concentration in ZnO:N films
DOI:10.1007/s10853-010-4497-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:4 AU: Li, L.;Shan, C. X.;Li, B. H.;Zhang, J. Y.;Yao, B.;Shen, D. Z.;Fan, X. W.;Lu, Y. M.;
10:532:8 Properties of In-N doped ZnO films synthesized by ion beam assisted deposition
DOI:10.1007/s10853-011-5258-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:2 AU: Yan, Zhi;Zhang, Xia;Liu, Yanhui;Zhou, Xiying;Liang, Jun;
10:532:9 Physical investigations on pulsed laser deposited nanocrystalline ZnO thin films
DOI:10.1007/s00339-012-6895-5 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:2 AU: Srinivasarao, K.;Rajinikanth, B.;Pandurangarao, K.;Mukhopadhyay, P. K.;
10:533:1 Effect of reaction time and Sb doping ratios on the architecturing of ZnO nanomaterials for gas sensor applications
DOI:10.1016/j.apsusc.2013.04.003 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Hassan, H. Shokry;Kashyout, A. B.;Soliman, H. M. A.;Uosif, M. A.;Afify, N.;
10:533:2 Temperature impact on morphological evolution of ZnO and its consequent effect on physico-chemical properties
DOI:10.1016/j.jallcom.2010.12.036 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:14 AU: Kulkarni, S. B.;Patil, U. M.;Salunkhe, R. R.;Joshi, S. S.;Lokhande, C. D.;
10:533:3 SnO2-Au nanocomposite synthesized by successive ionic layer deposition method: Characterization and application in gas sensors
DOI:10.1016/j.matchemphys.2011.03.041 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:9 AU: Korotcenkov, G.;Gulina, L. B.;Cho, B. K.;Han, S. H.;Tolstoy, V. P.;
10:533:4 Annealing effects on zinc oxide-silica films prepared by sol-gel technique for chemical sensing applications
DOI:10.1016/j.tsf.2014.02.058 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Ali, Atif Mossad;Ismail, Adel A.;Najmy, Rasha;Al-Hajry, Ali;
10:533:5 Properties of pulsed laser deposited nanocomposite NiO:Au thin films for gas sensing applications
DOI:10.1007/s00339-012-6816-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:4 AU: Fasaki, I.;Kandyla, M.;Kompitsas, M.;
10:533:6 Formulation of Synthesized Zinc Oxide Nanopowder into Hybrid Beads for Dye Separation
DOI:10.1155/2014/967492 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:2 AU: Hassan, H. Shokry;Elkady, M. F.;El-Shazly, A. H.;Bamufleh, Hisham S.;
10:533:7 Nanocomposite NiO:Pd hydrogen sensors with sub-ppm detection limit and low operating temperature
DOI:10.1016/j.matlet.2013.12.104 JN:MATERIALS LETTERS PY:2014
TC:5 AU: Kandyla, M.;Chatzimanolis-Moustakas, C.;Guziewicz, M.;Kompitsas, M.;
10:533:8 Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent
DOI:10.1016/j.solmat.2010.08.012 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2010
TC:3 AU: Choppali, Uma;Kougianos, Elias;Mohanty, Saraju P.;Gorman, Brian P.;
10:533:9 Fabrication of ZnO and ZnO:Sb Nanoparticles for Gas Sensor Applications
DOI:10.1155/2010/341841 JN:JOURNAL OF NANOMATERIALS PY:2010
TC:7 AU: Kashyout, A. B.;Soliman, H. M. A.;Hassan, H. Shokry;Abousehly, A. M.;
10:533:10 Coralloid SnO2 with hierarchical structure and their application as recoverable gas sensors for the detection of benzaldehyde/acetone
DOI:10.1016/j.matchemphys.2010.03.005 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:5 AU: Fang, Caihong;Wang, Shaozhen;Wang, Qian;Liu, Jun;Geng, Baoyou;
10:534:1 Pulsed laser deposition of indium tin oxide films on flexible polyethylene naphthalate display substrates at room temperature
DOI:10.1016/j.tsf.2009.08.002 JN:THIN SOLID FILMS PY:2010
TC:21 AU: Sierros, Konstantinos A.;Cairns, Darran R.;Abell, J. Stuart;Kukureka, Stephen N.;
10:534:2 Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition
DOI:10.1016/j.tsf.2011.04.202 JN:THIN SOLID FILMS PY:2011
TC:10 AU: Bruncko, J.;Vincze, A.;Netrvalova, M.;Sutta, P.;Hasko, D.;Michalka, M.;
10:534:3 Observation of the amorphous zinc oxide recrystalline process by molecular dynamics simulation
DOI:10.1063/1.4789956 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Lin, Ken-Huang;Sun, Shih-Jye;Ju, Shin-Pon;Tsai, Jen-Yu;Chen, Hsin-Tsung;Hsieh, Jin-Yuan;
10:534:4 Electromechanical properties of indium-tin-oxide/poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) hybrid electrodes for flexible transparent electrodes
DOI:10.1016/j.tsf.2013.09.075 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Jung, Sunghoon;Lim, Kyounga;Kang, Jae-Wook;Kim, Jong-Kuk;Oh, Se-In;Eun, Kyoungtae;Kim, Do-Geun;Choa, Sung-Hoon;
10:534:5 Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies
DOI:10.1063/1.3662202 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Huang, W. H.;Sun, S. J.;Chiou, J. W.;Chou, H.;Chan, T. S.;Lin, H. -J.;Kumar, Krishna;Guo, J. -H.;
10:534:6 Spherical indentation and scratch durability studies of transparent conducting layers on polymer substrates
DOI:10.1016/j.tsf.2011.08.024 JN:THIN SOLID FILMS PY:2011
TC:8 AU: Sierros, Konstantinos A.;Kessman, Aaron J.;Nair, Rahul;Randall, Nick X.;Cairns, Darran R.;
10:534:7 In-process ZnO thin films alloying during pulsed laser deposition
DOI:10.1007/s00339-012-7190-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Bruncko, Jaroslav;Vincze, Andrej;Netrvalova, Marie;Sutta, Pavol;Michalka, Miroslav;Uherek, Frantisek;
10:534:8 The Effects of Magnetic Field Size on the Electronic Structure of Al-Doped ZnO Thin Films Studied by X-ray Absorption and Emission Spectroscopy
DOI:10.1111/jace.12689 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:0 AU: Chiou, Jau-Wern;Huang, Wei-Hao;Sun, Shih-Jye;Yu, Chang-Feng;Chou, Hsiung;Yang, Hung-Duen;Yu, Yueh-Chung;Chan, Ting-Shan;Lin, Hong-Ji;Kumar, Krishna;Yang, Wanli;Guo, Jinghua;
10:535:1 Self-organized ZnO nanodot arrays: Effective control using SiNx interlayers and low-temperature plasmas
DOI:10.1063/1.3673593 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:7 AU: Huang, S. Y.;Cheng, Q. J.;Xu, S.;Wei, D. Y.;Zhou, H. P.;Long, J. D.;Levchenko, I.;Ostrikov, K.;
10:535:2 Role of ambient air on photoluminescence and electrical conductivity of assembly of ZnO nanoparticles
DOI:10.1063/1.3632059 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Ghosh, Manoranjan;Ningthoujam, R. S.;Vatsa, R. K.;Das, D.;Nataraju, V.;Gadkari, S. C.;Gupta, S. K.;Bahadur, D.;
10:535:3 Photoluminescence study of beta-Ga2O3 nanostructures annealed in different environments
DOI:10.1063/1.4742048 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Jangir, R.;Porwal, S.;Tiwari, Pragya;Monda, Puspen;Rai, S. K.;Ganguli, Tapas;Oak, S. M.;Deb, S. K.;
10:535:4 Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth
DOI:10.1063/1.4813116 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Alizadeh, M.;Mehdipour, H.;Goh, B. T.;Rahman, S. A.;
10:535:5 Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films
DOI:10.1007/s00339-014-8649-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Alizadeh, M.;Mehdipour, H.;Ganesh, V.;Ameera, A. N.;Goh, B. T.;Shuhaimi, A.;Rahman, S. A.;
10:535:6 Applicability of Langmuir equation to oxygen pressure dependent photoluminescence from beta-Ga2O3 nanostructures
DOI:10.1063/1.4818835 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Jangir, R.;Ganguli, Tapas;Porwal, S.;Tiwari, Pragya;Rai, S. K.;Bhaumik, Indranil;Kukreja, L. M.;Gupta, P. K.;Deb, S. K.;
10:535:7 Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization
DOI:10.1016/j.jcrysgro.2010.11.170 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:7 AU: Alzoubi, T.;Usman, M.;Benyoucef, M.;Reithmaier, J. P.;
10:535:8 Synthesis and characterization of self-assembled ZnO nano-dots grown on SiNx/Si(001) substrates by radio frequency magnetron sputtering
DOI:10.1016/j.tsf.2010.01.047 JN:THIN SOLID FILMS PY:2010
TC:4 AU: Sun, J. H.;Kang, Hyon Chol;
10:535:9 Synthesis and characterization of beta-Ga2O3 nanostructures grown on GaAs substrates
DOI:10.1016/j.apsusc.2011.05.039 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Jangir, R.;Ganguli, Tapas;Tiwari, Pragya;Porwal, S.;Srivastava, Himanshu;Rai, S. K.;Khattak, B. Q.;Oak, S. M.;
10:535:10 Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)
DOI:10.1016/j.jcrysgro.2010.05.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:2 AU: Enzmann, Roland;Bareiss, Mario;Baierl, Daniela;Hauke, Norman;Boehm, Gerhard;Meyer, Ralf;Finley, Jonathan;Amann, Markus-Christian;
10:536:1 The bound states of Fe impurity in wurtzite GaN
DOI:10.1063/1.3679133 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Zhang, M.;Zhou, T. F.;Zhang, Y. M.;Li, B.;Zheng, S. N.;Huang, J.;Sun, Y. P.;Ren, G. Q.;Wang, J. F.;Xu, K.;Yang, H.;
10:536:2 A high frequency GaN Lamb-wave sensor device
DOI:10.1063/1.3427484 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Pantazis, A. K.;Gizeli, E.;Konstantinidis, G.;
10:536:3 Luminescence and superradiance in electron-beam-excited AlxGa1-xN
DOI:10.1063/1.4894774 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Bokhan, P. A.;Gugin, P. P.;Zakrevsky, Dm. E.;Zhuravlev, K. S.;Malin, T. V.;Osinnykh, I. V.;Solomonov, V. I.;Spirina, A. V.;
10:536:4 Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy
DOI:10.1063/1.4893156 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Fan, Yingmin;Liu, Zhenghui;Xu, Gengzhao;Zhong, Haijian;Huang, Zengli;Zhang, Yumin;Wang, Jianfeng;Xu, Ke;
10:536:5 Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
DOI:10.1063/1.3592343 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Dumcenco, D. O.;Levcenco, S.;Huang, Y. S.;Reynolds, C. L., Jr.;Reynolds, J. G.;Tiong, K. K.;Paskova, T.;Evans, K. R.;
10:536:6 A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN
DOI:10.1063/1.4725484 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:6 AU: Kamyczek, P.;Placzek-Popko, E.;Kolkovsky, Vl;Grzanka, S.;Czernecki, R.;
10:536:7 Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors
DOI:10.1063/1.3665625 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Shao, Lei;Zhang, Meng;Banerjee, Animesh;Bhattacharya, Pallab;Pipe, Kevin P.;
10:536:8 Deep traps in n-type GaN epilayers grown by plasma assisted molecular beam epitaxy
DOI:10.1063/1.4861180 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kamyczek, P.;Placzek-Popko, E.;Zytkiewicz, Z. R.;Zielony, E.;Gumienny, Z.;
10:536:9 Electron-beam generation in a wide-aperture open gas discharge: A comparative study for different inert gases
DOI:10.1063/1.3485051 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Bokhan, P. A.;Zakrevsky, Dm. E.;
10:536:10 Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN
DOI:10.1063/1.3353971 JN:APPLIED PHYSICS LETTERS PY:2010
TC:6 AU: Pedros, J.;Calle, F.;Cuerdo, R.;Grajal, J.;Bougrioua, Z.;
10:536:11 Electrically driven nanoscale acoustic source based on a two-dimensional electron gas
DOI:10.1063/1.4818550 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Shao, Lei;Zhang, Meng;Banerjee, Animesh;Bhattacharya, Pallab K.;Pipe, Kevin P.;
10:536:12 Design and fabrication of GaN crystal ultra-small lateral comb-drive actuators
DOI:10.1116/1.3668114 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:2 AU: Tanae, Takuma;Sameshima, Hidehisa;Hane, Kazuhiro;
10:537:1 Electrical properties of ZnO nanorods studied by conductive atomic force microscopy
DOI:10.1063/1.3623764 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:19 AU: Beinik, I.;Kratzer, M.;Wachauer, A.;Wang, L.;Lechner, R. T.;Teichert, C.;Motz, C.;Anwand, W.;Brauer, G.;Chen, X. Y.;Hsu, X. Y.;Djurisic, A. B.;
10:537:2 Local piezoelectric effect on single crystal ZnO microbelt transverse I-V characteristics
DOI:10.1063/1.3555456 JN:APPLIED PHYSICS LETTERS PY:2011
TC:8 AU: Li, M.;Su, Y. J.;Chu, W. Y.;Qiao, L. J.;Volinsky, Alex A.;Kravchenko, Grygoriy;
10:537:3 Number Density and Diameter Control of Chemical Bath Deposition of ZnO Nanorods on FTO by Forced Hydrolysis of Seed Crystals
DOI:10.1111/jace.12819 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:1 AU: Manthina, Venkata;Patel, Tulsi;Agrios, Alexander G.;
10:537:4 Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy
DOI:10.1016/j.apsusc.2012.10.159 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Wu, Yunfeng;Yu, Naisen;Liu, Dongping;He, Yangyang;Liu, Yuanda;Liang, Hongwei;Du, Guotong;
10:537:5 Physical model construction for electrical anisotropy of single crystal zinc oxide micro/nanobelt using finite element method
DOI:10.1063/1.4871703 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yu, Guangbin;Tang, Chaolong;Song, Jinhui;Lu, Wenqiang;
10:537:6 Schottky nanocontact on single crystalline ZnO nanorod using conductive atomic force microscopy
DOI:10.1007/s11051-012-1361-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Panda, S. K.;Sant, S. B.;Jacob, C.;Shin, Hyunjung;
10:537:7 Synthesis and local electrical characterization of ZnO microwalls grown on cracked GaN/Si(111) by aqueous method
DOI:10.1063/1.4762824 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Yu, Naisen;Wu, Yunfeng;Du, Lifang;Du, Haiying;Mao, Zhangwen;Hu, Danyang;Wang, Yong;Zhu, Xueliang;
10:537:8 Electrical properties of ZnO nanorods studied by conductive atomic force microscopy (vol 110, 052005, 2011)
DOI:10.1063/1.4758293 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Beinik, I.;Kratzer, M.;Wachauer, A.;Wang, L.;Lechner, R. T.;Teichert, C.;Motz, C.;Anwand, W.;Brauer, G.;Chen, X. Y.;Hsu, Y. F.;Djurisic, A. B.;
10:538:1 Photoluminescence in laser ablated nanostructured indium oxide thin films
DOI:10.1016/j.jallcom.2009.09.055 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:17 AU: Beena, D.;Lethy, K. J.;Vinodkumar, R.;Detty, A. P.;Pillai, V. P. Mahadevan;Ganesan, V.;
10:538:2 Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In2O3 thin film
DOI:10.1063/1.4896321 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Schmidt-Grund, R.;Krauss, H.;Kranert, C.;Bonholzer, M.;Grundmann, M.;
10:538:3 Structural, optical and methanol sensing properties of sprayed In2O3 nanoparticle thin films
DOI:10.1016/j.ceramint.2012.01.075 JN:CERAMICS INTERNATIONAL PY:2012
TC:10 AU: Pramod, N. G.;Pandey, S. N.;Sahay, P. P.;
10:538:4 Comparative effects of indium/ytterbium doping on, mechanical and gas-sensitivity-related morphological, properties of sprayed ZnO compounds
DOI:10.1016/j.jallcom.2010.04.100 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:4 AU: Boukhachem, A.;Fridjine, S.;Amlouk, A.;Boubaker, K.;Bouhafs, M.;Amlouk, M.;
10:538:5 Efficient photoluminescence from pulsed laser ablated nanostructured indium oxide films
DOI:10.1016/j.mseb.2010.03.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:8 AU: Beena, D.;Vinodkumar, R.;Navas, I.;Rajan, Geo;Pillai, V. P. Mahadevan;
10:538:6 Synthesis of ultrafine single crystals and nanostructured coatings of indium oxide from solution precursor
DOI:10.1016/j.apsusc.2011.03.018 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Pentyala, Nagaswetha;Guduru, Ramesh K.;Shnerpunas, Elizabeth M.;Mohanty, Pravansu S.;
10:538:7 Influence of Sb doping on the structural, optical, electrical and acetone sensing properties of In2O3 thin films
DOI:10.1016/j.ceramint.2013.09.084 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Pramod, N. G.;Pandey, S. N.;
10:538:8 Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides
DOI:10.1063/1.4776781 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Lin, Y. H.;Liu, Y. S.;Lin, Y. C.;Wei, Y. S.;Liao, K. S.;Lee, K. R.;Lai, J. Y.;Chen, H. M.;Jean, Y. C.;Liu, C. Y.;
10:538:9 In situ growth of In2O3 nanocrystals by electron irradiation in transmission electron microscope
DOI:10.1016/j.matlet.2014.01.068 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Su, Qingmei;Du, Gaohui;Xu, Bingshe;
10:538:10 Effects of In2O3 modification of sprayed multiwalled carbon nanotubes for pH-sensing applications
DOI:10.1016/j.mssp.2014.06.033 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Huang, Bohr-Ran;Hung, Shang-Chao;Lo, Yuan-Pin;
10:539:1 Preparation and band gap energies of ZnO nanotubes, nanorods and spherical nanostructures
DOI:10.1016/j.powtec.2011.02.005 JN:POWDER TECHNOLOGY PY:2011
TC:34 AU: Rusdi, Roshidah;Rahman, Azilah Abd;Mohamed, Nor Sabirin;Kamarudin, Norashikin;Kamarulzaman, Norlida;
10:539:2 Individually aligned tubular ZnO nanostructures on solid substrates
DOI:10.1016/j.matlet.2014.09.014 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Jeon, Gumhye;Moon, Jong-Sik;Lee, Seunghyun;Lee, Jae Ho;An, Beum-Soo;Hwang, Dae Youn;Kim, Hong Sung;Jung, Young Jin;Kim, Jin Kon;Yang, Seung Yun;
10:539:3 Investigations on the influence of surfactant in morphology and optical properties of zinc oxide nanopowders for dye-sensitized solar cells applications
DOI:10.1016/j.mssp.2013.03.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Dumbrava, Anca;Prodan, Gabriel;Moscalu, Florin;
10:539:4 The relationship of etching behavior and crystal orientation of aluminum doped zinc oxide films
DOI:10.1016/j.apsusc.2010.08.054 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Ding, J. N.;Ye, F.;Yuan, N. Y.;Tan, C. B.;Zhu, Y. Y.;Ding, G. Q.;Chen, Z. H.;
10:539:5 Fabrication of porous ZnO via electrochemical etching using 10 wt% potassium hydroxide solution
DOI:10.1016/j.mssp.2012.06.017 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: Ching, C. G.;Ooi, P. K.;Ng, S. S.;Ahmad, M. A.;Hassan, Z.;Abu Hassan, H.;Abdullah, M. J.;
10:539:6 Control parameters on the fabrication of ZnO hollow nanocolumns
DOI:10.1016/j.mssp.2012.04.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Cembrero, J.;Busquets-Mataix, D.;Rayon, E.;Pascual, M.;Perez-Puig, M. A.;Mari, B.;
10:539:7 Comparative study of the properties of ZnO thin films deposited on poly propylene carbonate (PPC) and glass substrates
DOI:10.1007/s10853-011-5992-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:1 AU: Jandow, N. N.;Abu Hassan, H.;Yam, F. K.;Ibrahim, K.;
10:539:8 Hydrothermal synthesis of Zinc oxide (ZnO) nanotubes and its electrophoretic deposition on nickel filter
DOI:10.1016/j.matlet.2013.02.099 JN:MATERIALS LETTERS PY:2013
TC:9 AU: Ipeksac, Tugba;Kaya, Figen;Kaya, Cengiz;
10:539:9 Band gap energies of Li2xMg(1-x)O materials synthesized by the sol-gel method
DOI:10.1016/j.jcrysgro.2011.12.090 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Chayed, Nor Fadilah;Badar, Nurhanna;Rusdi, Roshidah;Azahidi, Azira;Kamarulzaman, Norlida;
10:539:10 Effects of the Absorption Behaviour of ZnO Nanoparticles on Cytotoxicity Measurements
DOI:10.1155/2014/694737 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Najim, Nigar;Rusdi, Roshidah;Hamzah, Ahmad Sazali;Shaameri, Zurina;Zain, Mazatulikhma Mat;Kamarulzaman, Norlida;
10:539:11 The characteristics of ZnO deposited on PPC plastic substrate
DOI:10.1016/j.matlet.2010.07.025 JN:MATERIALS LETTERS PY:2010
TC:3 AU: Jandow, N. N.;Yam, F. K.;Thahab, S. M.;Ibrahim, K.;Abu Hassan, H.;
10:540:1 Superhydrophilic zinc oxide film prepared by controlling ZnO microrods growth and its attractive recyclable photocatalytic performance
DOI:10.1016/j.tsf.2013.04.135 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Dai, Kai;Chen, Zheng;Lu, Luhua;Zhu, Guangping;Liu, Zhongliang;Liu, Qinzhuang;
10:540:2 Controlled fabrication and properties of three-dimensional ZnO@hemimorphite nano-heterostructures
DOI:10.1016/j.ceramint.2014.05.146 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Sun, Yangang;Cai, Liyuan;Zhang, Wenlong;
10:540:3 Facile synthesis of ZnO nanopencil arrays for photoelectrochemical water splitting
DOI:10.1016/j.nanoen.2014.04.020 JN:NANO ENERGY PY:2014
TC:3 AU: Lv, Rui;Wang, Tuo;Su, Fengli;Zhang, Peng;Li, Changjiang;Gong, Jinlong;
10:540:4 Facile preparation and growth mechanism of zinc oxide nanopencils
DOI:10.1016/j.matlet.2011.09.079 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Dai, Kai;Zhu, Guangping;Liu, Zhongliang;Liu, Qingzhuang;Chen, Zheng;Lu, Luhua;
10:540:5 Effect of Glass Dissolution on the Solution Deposition of ZnO Films and Its Exploitation for Deposition of Zn Silicates
DOI:10.1021/ja907580u JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:10 AU: Kokotov, Michael;Bar-Nachum, Shay;Edri, Eran;Hodes, Gary;
10:540:6 Thermodynamic Modeling of Hydroxyapatite Crystallization with Biomimetic Precursor Design Considerations
DOI:10.1021/cm900183v JN:CHEMISTRY OF MATERIALS PY:2010
TC:7 AU: Mossaad, Christina;Starr, Matthew;Patil, Swanand;Riman, Richard E.;
10:540:7 Growth mechanism and multiphoton-induced photoluminescence of crownlike zinc oxide
DOI:10.1007/s10853-010-5019-x JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:4 AU: Zhu, G. P.;Xu, C. X.;Zhu, J.;Wang, M. H.;
10:540:8 Selenium-Modified TiO2 and Its Impact on Photocatalysis
DOI:10.1021/la1026569 JN:LANGMUIR PY:2010
TC:21 AU: Rockafellow, Erin M.;Haywood, Jessica M.;Witte, Travis;Houk, Robert S.;Jenks, William S.;
10:540:9 Growth of polycrystalline nickel hydroxide films from aqueous solution. Solution chemistry, deposition methods, film morphology and texture
DOI:10.1016/j.tsf.2013.12.008 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Presto, Sabrina;Giraud, Damien;Testino, Andrea;Bottino, Carlo;Viviani, Massimo;Buscaglia, Vincenzo;
10:541:1 Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes
DOI:10.1016/j.mseb.2012.01.004 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:17 AU: Gokcen, M.;Tunc, T.;Altindal, S.;Uslu, I.;
10:541:2 Electrical modulus and dielectric spectroscopy behavior of spin coated perylene-monoimide semiconductor films
DOI:10.1016/j.mssp.2014.08.043 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Tugluoglu, Nihat;Karadeniz, Serdar;Baris, Behzad;
10:541:3 Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis
DOI:10.1007/s11664-010-1367-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:15 AU: Arslan, Engin;Butun, Serkan;Safak, Yasemin;Ozbay, Ekmel;
10:541:4 Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes
DOI:10.1007/s11664-012-2332-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Gokcen, M.;
10:541:5 On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode
DOI:10.1063/1.3681371 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Safak, Yasemin;Soylu, Murat;Yakuphanoglu, Fahrettin;Altindal, Semsettin;
10:541:6 Electrical conductivity and dielectric measurements of CoMTPP
DOI:10.1016/j.matchemphys.2013.08.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:2 AU: El-Nahass, M. M.;Atta, A. A.;El-Zaidia, E. F. M.;Farag, A. A. M.;Ammar, A. H.;
10:541:7 Dielectric, conduction and interface properties of Au/Pc/p-Si Schottky barrier diode
DOI:10.1016/j.synthmet.2012.01.002 JN:SYNTHETIC METALS PY:2012
TC:7 AU: Altindal, Ahmet;Coskun, Mustafa;Bekaroglu, Ozer;
10:541:8 Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer
DOI:10.1016/j.synthmet.2013.10.012 JN:SYNTHETIC METALS PY:2013
TC:11 AU: Reddy, M. Siva Pratap;Lee, Jung-Hee;Jang, Ja-Soon;
10:541:9 Electrical conductivity and dielectric relaxation of bulk iron (III) chloride tetraphenylporphyrin
DOI:10.1016/j.matchemphys.2012.01.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:6 AU: El-Nahass, M. M.;Metwally, H. S.;El-Sayed, H. E. A.;Hassanien, A. M.;
10:541:10 Fabrication and characterization of DBM/p-Si heterojunction solar cell
DOI:10.1016/j.matchemphys.2012.09.013 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: El-Nahass, M. M.;Kamel, M. A.;Atta, A. A.;Huthaily, S. Y.;
10:542:1 Field emission properties of CdS cubes with concave planes via gamma-irradiation
DOI:10.1016/j.matlet.2012.02.002 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Liu, Weijun;Wang, Fang;
10:542:2 Synthesis, growth mechanism, photoluminescence and field emission properties of metal-semiconductor Zn-ZnO core-shell microcactuses
DOI:10.1016/j.matchemphys.2010.06.072 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:15 AU: Khan, Waheed S.;Cao, Chuanbao;Chen, Zhou;Nabi, Ghulam;
10:542:3 The growth of Sea-urchin-like AlN nanostructures by modified CVD and their Field Emission properties
DOI:10.1016/j.jcrysgro.2015.05.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Guo, Lu'an;Chen, Guangde;Zhu, Youzhang;Duan, Xiangyang;Ye, Honggang;
10:542:4 Ultrashort Single-Wall Carbon Nanotubes Reveal Field-Emission Coulomb Blockade and Highest Electron-Source Brightness
DOI:10.1103/PhysRevLett.112.126805 JN:PHYSICAL REVIEW LETTERS PY:2014
TC:1 AU: Pascale-Hamri, A.;Perisanu, S.;Derouet, A.;Journet, C.;Vincent, P.;Ayari, A.;Purcell, S. T.;
10:542:5 Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties
DOI:10.1016/j.matlet.2011.08.049 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Nabi, Ghulam;Cao, Chuanbao;Khan, Waheed S.;Hussain, Sajad;Usman, Zahid;Khattak, Noor Abass Din;Ali, Zulfiqar;Butt, Faheem K.;Shah, Sajjad Hussain;Safdar, Muhammad;
10:542:6 Coulomb-Controlled Single Electron Field Emission via a Freely Suspended Metallic Island
DOI:10.1021/nl903644u JN:NANO LETTERS PY:2010
TC:9 AU: Kim, Chulki;Kim, Hyun S.;Qin, Hua;Blick, Robert H.;
10:542:7 Enhanced near-UV emission from self-catalytic brush-like GaN nanowires
DOI:10.1016/j.matlet.2013.11.040 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Kim, Soohyun;Park, Sunghoon;Ko, Hyunsung;Jeong, Bong Yong;Lee, Chongmu;
10:542:8 Electron emission Si-based resonant-tunneling diode
DOI:10.1116/1.3693977 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:1 AU: Evtukh, A.;Litovchenko, V.;Goncharuk, N.;Mimura, H.;
10:542:9 Influence of the emitted electron energy distribution from nanocathodes upon the current-voltage characteristics
DOI:10.1116/1.4843715 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:0 AU: Evtukh, Anatoliy;Grygoriev, Anton;Litovchenko, Volodymyr;Steblova, Olga;Yilmazoglu, Oktay;Hartnagel, Hans L.;Mimura, Hidenori;
10:542:10 Field emission properties of electrodeposited cobalt nanowire arrays grown in anodic aluminum oxide
DOI:10.1016/j.matlet.2010.09.024 JN:MATERIALS LETTERS PY:2011
TC:4 AU: Song, Zhenxing;Xie, Yujuan;Yao, Suwei;Wang, Hongzhi;
10:542:11 Host-guest interaction and nano-microstructure of spherical poly(amidoamine) dendrimer/gold hybrid colloids under gamma-ray irradiation
DOI:10.1016/j.matlet.2011.09.043 JN:MATERIALS LETTERS PY:2012
TC:1 AU: Li, Rui;Xie, Anjian;Pang, Wenmin;Zhu, Qingren;Nie, Kangming;
10:543:1 Electronic transitions and genuine crystal-field parameters in copper metaborate CuB2O4
DOI:10.1103/PhysRevB.84.075160 JN:PHYSICAL REVIEW B PY:2011
TC:6 AU: Pisarev, R. V.;Kalashnikova, A. M.;Schoeps, O.;Bezmaternykh, L. N.;
10:543:2 Resonant inelastic x-ray scattering study of intraband charge excitations in hole-doped high-T-c cuprates
DOI:10.1103/PhysRevB.87.104511 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Wakimoto, Shuichi;Ishii, Kenji;Kimura, Hiroyuki;Ikeuchi, Kazuhiko;Yoshida, Masahiro;Adachi, Tadashi;Casa, Diego;Fujita, Masaki;Fukunaga, Yasushi;Gog, Thomas;Koike, Yoji;Mizuki, Jun'ichiro;Yamada, Kazuyoshi;
10:543:3 Visible-light-responsive copper(II) borate photocatalysts with intrinsic midgap states for water splitting
DOI:10.1039/c2ta00522k JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:12 AU: Liu, Jikai;Wen, Shuhao;Zou, Xiaoxin;Zuo, Fan;Beran, Gregory J. O.;Feng, Pingyun;
10:543:4 Polarization dependence and symmetry analysis in indirect K-edge RIXS
DOI:10.1103/PhysRevB.82.035113 JN:PHYSICAL REVIEW B PY:2010
TC:8 AU: Chabot-Couture, G.;Hancock, J. N.;Mang, P. K.;Casa, D. M.;Gog, T.;Greven, M.;
10:543:5 d-d excitations and charge ordering in La5/3Sr1/3NiO4
DOI:10.1103/PhysRevB.81.195124 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Simonelli, L.;Huotari, S.;Filippi, M.;Saini, N. L.;Monaco, G.;
10:543:6 Charge transfer and Mott-Hubbard excitations in FeBO3: An Fe K-edge resonant inelastic x-ray scattering study
DOI:10.1103/PhysRevB.83.235109 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Kim, Jungho;Shvyd'ko, Yuri;Ovchinnikov, S. G.;
10:543:7 Observation of dd excitations in NiO and NiCl2 using K-edge resonant inelastic x-ray scattering
DOI:10.1103/PhysRevB.83.045101 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: van Veenendaal, Michel;Liu, Xiaosong;Carpenter, Matthew H.;Cramer, Stephen P.;
10:543:8 Near-band gap electronic structure of the tetragonal rare-earth cuprates R2CuO4 and the bismuth cuprate Bi2CuO4
DOI:10.1103/PhysRevB.82.224502 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Pisarev, R. V.;Pavlov, V. V.;Kalashnikova, A. M.;Moskvin, A. S.;
10:543:9 Orbital excitation in Sr2CuO2Cl2: Resonant inelastic x-ray scattering at the Cu K pre-edge
DOI:10.1103/PhysRevB.81.073109 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Kim, Jungho;Ellis, D. S.;Gog, T.;Casa, D.;Kim, Young-June;
10:543:10 Lattice dynamics of piezoelectric copper metaborate CuB2O4
DOI:10.1103/PhysRevB.88.024301 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Pisarev, R. V.;Boldyrev, K. N.;Popova, M. N.;Smirnov, A. N.;Davydov, V. Yu.;Bezmaternykh, L. N.;Smirnov, M. B.;Kazimirov, V. Yu.;
10:543:11 Pressure effect on the electronic structure of La5/3Sr1/3NiO4 by XES and RIXS
DOI:10.1103/PhysRevB.84.195140 JN:PHYSICAL REVIEW B PY:2011
TC:2 AU: Simonelli, L.;Giordano, V. M.;Saini, N. L.;Monaco, G.;
10:543:12 Electronic structure of La5/3Sr1/3NiO4 by x-ray emission spectroscopy and resonant inelastic x-ray scattering
DOI:10.1063/1.4726248 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Simonelli, L.;Saini, N. L.;Huotari, S.;Giordano, V. M.;Monaco, G.;
10:544:1 Effect of the doping level on the radiative life time in ZnO nanowires
DOI:10.1063/1.4705370 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Robin, Ivan-Christophe;
10:544:2 Waveguiding-assisted random lasing in epitaxial ZnO thin film
DOI:10.1063/1.3527087 JN:APPLIED PHYSICS LETTERS PY:2010
TC:12 AU: Dupont, P. -H.;Couteau, C.;Rogers, D. J.;Teherani, F. Hosseini;Lerondel, G.;
10:544:3 Stimulated emission from ZnO thin films with high optical gain and low loss
DOI:10.1063/1.4803081 JN:APPLIED PHYSICS LETTERS PY:2013
TC:10 AU: Gadallah, A. -S.;Nomenyo, K.;Couteau, C.;Rogers, D. J.;Lerondel, G.;
10:544:4 Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring
DOI:10.1063/1.4875744 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Nomenyo, K.;Gadallah, A. -S.;Kostcheev, S.;Rogers, D. J.;Lerondel, G.;
10:544:5 Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer
DOI:10.1063/1.4864750 JN:AIP ADVANCES PY:2014
TC:2 AU: Yang, Qing;Zhou, Xiaohong;Nukui, Takao;Saeki, Yu;Izumi, Sotaro;Tackeuchi, Atsushi;Tatsuoka, Hirokazu;Liang, Shuhua;
10:544:6 Fabrication and characterization of solution processed vertically aligned ZnO microrods
DOI:10.1016/j.apsusc.2014.05.037 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Gadallah, A. -S.;
10:544:7 Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire
DOI:10.1063/1.4752428 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Aad, Roy;Divay, Laurent;Bruyant, Aurelien;Blaize, Sylvain;Couteau, Christophe;Rogers, David J.;Lerondel, Gilles;
10:544:8 On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO
DOI:10.1063/1.4847615 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Lettieri, S.;Capello, V.;Santamaria, L.;Maddalena, P.;
10:544:9 Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers
DOI:10.1016/j.apsusc.2010.04.049 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Yang, Qing;Saeki, Yu;Izumi, Sotaro;Nukui, Takao;Tackeuchi, Atsushi;Ishida, Akihiro;Tatsuoka, Hirokazu;
10:544:10 Enhancement of ultrathin film emission using a waveguiding active layer
DOI:10.1063/1.3524537 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Aad, R.;Blaize, S.;Bruyant, A.;Couteau, C.;Lerondel, G.;
10:545:1 Solid-state synthesis and effect of temperature on optical properties of Cu-ZnO, Cu-CdO and CuO nanoparticles
DOI:10.1016/j.powtec.2011.08.025 JN:POWDER TECHNOLOGY PY:2011
TC:36 AU: Vidyasagar, C. C.;Naik, Y. Arthoba;Venkatesh, T. G.;Viswanatha, R.;
10:545:2 Producing CuO and ZnO composite thin films using the spin coating method on microscope glasses
DOI:10.1016/j.mseb.2013.01.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:5 AU: Nalbant, Aykut;Ertek, Ozlem;Okur, Ibrahim;
10:545:3 Size dependent carrier recombination in ZnO nanocrystals
DOI:10.1063/1.3494535 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Pozina, G.;Yang, L. L.;Zhao, Q. X.;Hultman, L.;Lagoudakis, P. G.;
10:545:4 Preparation of CuO nanopowders and their catalytic activity in photodegradation of Rhodamine-B
DOI:10.1016/j.apt.2014.02.005 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:6 AU: Shaabani, Behrouz;Alizadeh-Gheshlaghi, Ebrahim;Azizian-Kalandaragh, Yashar;Khodayari, Ali;
10:545:5 Influence of thickness and coatings morphology in the antimicrobial performance of zinc oxide coatings
DOI:10.1016/j.apsusc.2014.04.072 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Carvalho, P.;Sampaio, P.;Azevedo, S.;Vaz, C.;Espinos, J. P.;Teixeira, V.;Carneiro, J. O.;
10:545:6 Properties of doped ZnO thin films grown by simultaneous dc and RF magnetron sputtering
DOI:10.1016/j.mseb.2010.03.080 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:2 AU: Sahu, D. R.;
10:545:7 Excitonic diffusion dynamics in ZnO
DOI:10.1063/1.3690055 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Jeong, H.;Min, K.;Byun, S.;Stanton, C. J.;Reitze, D. H.;Yoo, J. K.;Yi, G. C.;Jho, Y. D.;
10:545:8 Studying the Raman spectra of Ag doped ZnO films grown by PLD
DOI:10.1016/j.mssp.2011.05.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:9 AU: Wang, L. N.;Hu, L. Z.;Zhang, H. Q.;Qiu, Y.;Lang, Y.;Liu, G. Q.;Ji, J. Y.;Ma, J. X.;Zhao, Z. W.;
10:545:9 Preparation and physicomechanical properties of co-precipitated rice starch-colloidal silicon dioxide
DOI:10.1016/j.powtec.2011.10.051 JN:POWDER TECHNOLOGY PY:2012
TC:3 AU: Kittipongpatana, Ornanong Suwannapakul;Kittipongpatana, Nisit;
10:546:1 Syntheses and characterization of thin films of Te94Se6 nanoparticles for semiconducting and optical devices
DOI:10.1016/j.tsf.2012.12.021 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Salah, Numan;Habib, Sami S.;Memic, Adnan;Alharbi, Najlaa D.;Babkair, Saeed S.;Khan, Zishan H.;
10:546:2 Influence of pH, Precursor Concentration, Growth Time, and Temperature on the Morphology of ZnO Nanostructures Grown by the Hydrothermal Method
DOI:10.1155/2011/269692 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:24 AU: Amin, G.;Asif, M. H.;Zainelabdin, A.;Zaman, S.;Nur, O.;Willander, M.;
10:546:3 Synthesis and Characterization of Se35Te65-xGex Nanoparticle Films and Their Optical Properties
DOI:10.1155/2012/393084 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Salah, Numan;Habib, Sami S.;Khan, Zishan H.;Alarfaj, Esam;Khan, Shamshad A.;
10:546:4 Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles
DOI:10.1007/s11051-011-0711-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:7 AU: Selishcheva, Elena;Parisi, Juergen;Kolny-Olesiak, Joanna;
10:546:5 Laser ablation synthesis of indium oxide nanoparticles in water
DOI:10.1016/j.apsusc.2010.05.003 JN:APPLIED SURFACE SCIENCE PY:2010
TC:11 AU: Acacia, N.;Barreca, F.;Barletta, E.;Spadaro, D.;Curro, G.;Neri, F.;
10:546:6 Propeller-Shaped ZnO Nanostructures Obtained by Chemical Vapor Deposition: Photoluminescence and Photocatalytic Properties
DOI:10.1155/2012/594290 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:3 AU: Wang, S. L.;Zhu, H. W.;Tang, W. H.;Li, P. G.;
10:546:7 CO sensing devices based on indium oxide nanoparticles prepared by laser ablation in water
DOI:10.1016/j.tsf.2011.04.182 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Donato, N.;Neri, F.;Neri, G.;Latino, M.;Barreca, F.;Spadaro, S.;Pisagatti, I.;Curro, G.;
10:546:8 Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method
DOI:10.1016/j.jcrysgro.2010.04.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Kang, Se-Koo;Jeon, Min-Hwan;Park, Jong-Yoon;Lee, Hyoung-Cheol;Park, Byung-Jae;Yeon, Je-Kwan;Yeom, Geun-Young;
10:546:9 Solvothermal synthesis of In(OH)(3) nanorods and their conversion to In2O3
DOI:10.1016/j.matlet.2010.03.030 JN:MATERIALS LETTERS PY:2010
TC:6 AU: Yang, Hongxiao;Yang, Zhijie;Liang, Hui;Liu, Ling;Guo, Jinxin;Yang, Yanzhao;
10:547:1 Accurate determination of homogeneous and inhomogeneous excitonic broadening in ZnO by linear and nonlinear spectroscopies
DOI:10.1103/PhysRevB.87.161202 JN:PHYSICAL REVIEW B PY:2013
TC:1 AU: Mallet, E.;Disseix, P.;Lagarde, D.;Mihailovic, M.;Reveret, F.;Shubina, T. V.;Leymarie, J.;
10:547:2 Polariton effects in the dielectric function of ZnO excitons obtained by ellipsometry
DOI:10.1063/1.3284656 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Cobet, Munise;Cobet, Christoph;Wagner, Markus R.;Esser, Norbert;Thomsen, Christian;Hoffmann, Axel;
10:547:3 Delay and distortion of slow light pulses by excitons in ZnO
DOI:10.1103/PhysRevB.84.075202 JN:PHYSICAL REVIEW B PY:2011
TC:5 AU: Shubina, T. V.;Glazov, M. M.;Gippius, N. A.;Toropov, A. A.;Lagarde, D.;Disseix, P.;Leymarie, J.;Gil, B.;Pozina, G.;Bergman, J. P.;Monemar, B.;
10:547:4 Slowdown of light due to exciton-polariton propagation in ZnO
DOI:10.1103/PhysRevB.83.245212 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Chen, S. L.;Chen, W. M.;Buyanova, I. A.;
10:547:5 Subnanosecond delay of light in CdxZn1-xTe crystals
DOI:10.1103/PhysRevB.82.115332 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Godde, T.;Akimov, I. A.;Yakovlev, D. R.;Mariette, H.;Bayer, M.;
10:547:6 Excitonic parameters of GaN studied by time-of-flight spectroscopy
DOI:10.1063/1.3625431 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Shubina, T. V.;Toropov, A. A.;Pozina, G.;Bergman, J. P.;Glazov, M. M.;Gippius, N. A.;Disseix, P.;Leymarie, J.;Gil, B.;Monemar, B.;
10:547:7 Magnetic field induced nutation of exciton-polariton polarization in (Cd,Zn)Te crystals
DOI:10.1103/PhysRevB.88.155203 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Godde, T.;Glazov, M. M.;Akimov, I. A.;Yakovlev, D. R.;Mariette, H.;Bayer, M.;
10:547:8 Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities
DOI:10.1063/1.3476553 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Medard, F.;Lagarde, D.;Zuniga-Perez, J.;Disseix, P.;Mihailovic, M.;Leymarie, J.;Frayssinet, E.;Moreno, J. C.;Semond, F.;Leroux, M.;Bouchoule, S.;
10:547:9 Intra-excitonic relaxation dynamics in ZnO
DOI:10.1063/1.3668102 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Chernikov, Alexej;Koch, Martin;Laumer, Bernhard;Wassner, Thomas A.;Eickhoff, Martin;Koch, Stephan W.;Chatterjee, Sangam;
10:548:1 Size-Selective Incorporation of DNA Nanocages into Nanoporous Antimony-Doped Tin Oxide Materials
DOI:10.1021/nn2019286 JN:ACS NANO PY:2011
TC:10 AU: Simmons, Chad R.;Schmitt, Dominik;Wei, Xixi;Han, Dongran;Volosin, Alex M.;Ladd, Danielle M.;Seo, Dong-Kyun;Liu, Yan;Yan, Hao;
10:548:2 Highly enhanced ultraviolet photosensitivity and recovery speed in electrospun Ni-doped SnO2 nanobelts
DOI:10.1063/1.4824026 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Huang, Siya;Matsubara, Kohei;Cheng, Jing;Li, Heping;Pan, Wei;
10:548:3 One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganic/organic networks
DOI:10.1039/c1jm12362a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:12 AU: Volosin, Alex M.;Sharma, Sudhanshu;Traverse, Christopher;Newman, Nathan;Seo, Dong-Kyun;
10:548:4 Preparation and electrochemical properties of nanoporous transparent antimony-doped tin oxide (ATO) coatings
DOI:10.1039/c2ta00002d JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:5 AU: Sharma, Sudhanshu;Volosin, Alex M.;Schmitt, Dominik;Seo, Dong-Kyun;
10:548:5 Preparation of highly porous gamma-alumina via combustion of biorenewable oil
DOI:10.1039/b927510j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:5 AU: Ladd, Danielle M.;Volosin, Alex;Seo, Dong-Kyun;
10:548:6 A novel method for fabricating Fe nanobelts
DOI:10.1016/j.matlet.2014.03.117 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Yang, Feng;Cui, Lishan;Liu, Yinong;Feng, Chun;
10:548:7 Width-to-thickness ratio dependence on photoplastic effect of ZnS nanobelt
DOI:10.1063/1.4749273 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Wei, Y.;Xu, L. H.;Tao, Y. W.;Zheng, X. J.;Yang, J. H.;Zou, D. F.;Mao, S. X.;
10:548:8 Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation
DOI:10.1063/1.3500421 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Zheng, X. J.;Yu, G. C.;Chen, Y. Q.;Mao, S. X.;Zhang, T.;
10:548:9 Simple fabrication of transparent flexible devices using SnO2 nanowires and their optoelectronic properties
DOI:10.1016/j.matlet.2011.10.016 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Woo, Hyung-Sik;Hwang, In-Sung;Na, Chan Woong;Kim, Sun-Jung;Choi, Joong-Ki;Lee, Jae-Seung;Choi, Jaewan;Kim, Gyu-Tae;Lee, Jong-Heun;
10:548:10 Nanoparticles of antimony doped tin dioxide as a liquid petroleum gas sensor: effect of size on sensitivity
DOI:10.1088/0957-4484/22/27/275506 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Banerjee, Suparna;Bumajdad, Ali;Devi, P. Sujatha;
10:549:1 A Raman spectroscopic study of structural evolution of electrochemically deposited ZnO films with deposition time
DOI:10.1016/j.matchemphys.2011.01.026 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Tripathi, Neeti;Vijayarangamuthu, K.;Rath, Shyama;
10:549:2 Surface plasmon enhanced bandgap emission of electrochemically grown ZnO nanorods using Au nanoparticles
DOI:10.1016/j.tsf.2011.11.074 JN:THIN SOLID FILMS PY:2012
TC:17 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:549:3 Thickness dependence of optoelectronic properties in ALD grown ZnO thin films
DOI:10.1016/j.apsusc.2013.10.071 JN:APPLIED SURFACE SCIENCE PY:2014
TC:10 AU: Singh, Trilok;Lehnen, Thomas;Leuning, Tessa;Sahu, Diptiranjan;Mathur, Sanjay;
10:549:4 Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique
DOI:10.1016/j.apsusc.2010.01.093 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Mouet, T.;Devers, T.;Telia, A.;Messai, Z.;Harel, V.;Konstantinov, K.;Kante, I.;Ta, M. T.;
10:549:5 Effect of supporting electrolytes on the growth and optical properties of electrochemically deposited ZnO nanorods
DOI:10.1016/j.optmat.2013.03.015 JN:OPTICAL MATERIALS PY:2013
TC:4 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:549:6 Concentration dependent structural and optical properties of electrochemically grown ZnO thin films and nanostructures
DOI:10.1016/j.apsusc.2013.01.088 JN:APPLIED SURFACE SCIENCE PY:2013
TC:11 AU: Singh, Trilok;Pandya, D. K.;Singh, R.;
10:549:7 Control of cathodic potential for deposition of ZnO by constant-current electrochemical method
DOI:10.1016/j.tsf.2009.09.194 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Nouzu, Naoya;Ashida, Atsushi;Yoshimura, Takeshi;Fujimura, Norifumi;
10:550:1 Characterization of wurtzite ZnO using valence electron energy loss spectroscopy
DOI:10.1103/PhysRevB.84.155203 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Huang, Michael R. S.;Erni, Rolf;Lin, Hsin-Ying;Wang, Ruey-Chi;Liu, Chuan-Pu;
10:550:2 Effects of gas environment on electronic and optical properties of amorphous indium zinc tin oxide thin films
DOI:10.1116/1.4801023 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Denny, Yus Rama;Lee, Sunyoung;Lee, Kangil;Seo, Soonjoo;Oh, Suhk Kun;Kang, Hee Jae;Heo, Sung;Chung, Jae Gwan;Lee, Jae Cheol;Tougaard, Sven;
10:550:3 Electronic and optical properties of selected polymers studied by reflection electron energy loss spectroscopy
DOI:10.1063/1.3688327 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Tahir, Dahlang;Tougaard, Sven;
10:550:4 Electronic and optical properties of Fe, Pd, and Ti studied by reflection electron energy loss spectroscopy
DOI:10.1063/1.4885876 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Tahir, Dahlang;Kraaer, Jens;Tougaard, Sven;
10:550:5 Effects of the O-2 flow rate and post-deposition thermal annealing on the optical absorption spectra of Ga-doped ZnO films
DOI:10.1016/j.tsf.2010.08.168 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Makino, Hisao;Yamada, Takahiro;Yamamoto, Naoki;Yamamoto, Tetsuya;
10:550:6 Dielectric response functions of the (000(1)over-bar), (10(1)over-bar3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
DOI:10.1063/1.3622674 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Romanyuk, O.;Jiricek, P.;Zemek, J.;Tougaard, S.;Paskova, T.;
10:550:7 The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio
DOI:10.1016/j.tsf.2011.10.064 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Damisih;Ma, Hong Chan;Kim, Jeong-Joo;Lee, Hee Young;
10:550:8 Plasmons dispersion and nonvertical interband transitions in single crystal Bi2Se3 investigated by electron energy-loss spectroscopy
DOI:10.1103/PhysRevB.87.085126 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Liou, S. C.;Chu, M. -W.;Sankar, R.;Huang, F-T.;Shu, G. J.;Chou, F. C.;Chen, C. H.;
10:550:9 Dielectric spectroscopy for probing the relaxation and charge transport in polypyrrole nanofibers
DOI:10.1063/1.3592974 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Banerjee, Somik;Kumar, A.;
10:550:10 Influence of surface oxidation on the valence electron energy-loss spectrum of wurtzite aluminum nitride
DOI:10.1063/1.4790395 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Huang, Michael R. S.;Erni, Rolf;Liu, Chuan-Pu;
10:550:11 The Characteristics of IZTO Thin Films Prepared by FTS with a Hetero-Target at Various Substrate Temperatures
DOI:10.1080/15421406.2010.497036 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:3 AU: Kim, Dae Hyun;Choi, Hyung Wook;Park, Sang Joon;Yoon, Hyon Hee;Kim, Kyung Hwan;
10:550:12 Room temperature deposition of IZTO transparent anode films for organic light-emitting diodes
DOI:10.1016/j.materresbull.2012.04.089 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:3 AU: Ko, Yoon Duk;Kim, Young Sung;
10:551:1 Interaction of Bovine Serum Albumin and Lysozyme with Stainless Steel Studied by Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy
DOI:10.1021/la3039279 JN:LANGMUIR PY:2012
TC:10 AU: Hedberg, Yolanda S.;Killian, Manuela S.;Blomberg, Eva;Virtanen, Sannakaisa;Schmuki, Patrik;Wallinder, Inger Odnevall;
10:551:2 Ab initio DFT plus U predictions of tensile properties of iron oxides
DOI:10.1039/c0jm01199a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:19 AU: Liao, Peilin;Carter, Emily A.;
10:551:3 Transition metal oxide alloys as potential solar energy conversion materials
DOI:10.1039/c2ta00816e JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:10 AU: Toroker, Maytal Caspary;Carter, Emily A.;
10:551:4 Biomolecule-Biomaterial Interaction: A DFT-D Study of Glycine Adsorption and Self-Assembly on Hydroxylated Cr2O3 Surfaces
DOI:10.1021/la104317j JN:LANGMUIR PY:2011
TC:23 AU: Costa, D.;Garrain, P. -A.;Diawara, B.;Marcus, P.;
10:551:5 Local structure, magnetic and electronic properties of N-doped alpha-Cr2O3 from the first-principles
DOI:10.1016/j.commatsci.2013.08.042 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:0 AU: Stashans, Arvids;Jacome, Soraya;
10:551:6 Protein arrangement on modified diamond-like carbon surfaces - An ARXPS study
DOI:10.1016/j.apsusc.2014.10.005 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Oosterbeek, Reece N.;Seal, Christopher K.;Hyland, Margaret M.;
10:551:7 Adsorption and protein-induced metal release from chromium metal and stainless steel
DOI:10.1016/j.jcis.2011.09.068 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2012
TC:16 AU: Lundin, M.;Hedberg, Y.;Jiang, T.;Herting, G.;Wang, X.;Thormann, E.;Blomberg, E.;Wallinder, I. Odnevall;
10:551:8 Ab initio density functional theory plus U predictions of the shear response of iron oxides
DOI:10.1016/j.actamat.2010.07.007 JN:ACTA MATERIALIA PY:2010
TC:4 AU: Liao, Peilin;Carter, Emily A.;
10:551:9 Thermal Expansion, Heat Capacity, and Thermal Conductivity of Nickel Ferrite (NiFe2O4)
DOI:10.1111/jace.12901 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:3 AU: Nelson, Andrew T.;White, Joshua T.;Andersson, David A.;Aguiar, Jeffery A.;McClellan, Kenneth J.;Byler, Darrin D.;Short, Michael P.;Stanek, Christopher R.;
10:551:10 Influences of properties of protein and adsorption surface on removal kinetics of protein adsorbed on metal surface by H2O2-electrolysis treatment
DOI:10.1016/j.jcis.2010.01.083 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:2 AU: Imamura, Koreyoshi;Oshita, Manabu;Iwai, Masumi;Kuroda, Toshiki;Watanabe, Ippei;Sakiyama, Takaharu;Nakanishi, Kazuhiro;
10:552:1 On tuning the orientation of grains of spray pyrolysed ZnO thin films
DOI:10.1016/j.apsusc.2010.03.113 JN:APPLIED SURFACE SCIENCE PY:2010
TC:16 AU: Vimalkumar, T. V.;Poornima, N.;Kartha, C. Sudha;Vijayakumar, K. P.;
10:552:2 Control of interconnected ZnO nanowires to vertically aligned ZnO nanorod arrays by tailoring the underlying spray deposited ZnO seed layer
DOI:10.1016/j.materresbull.2014.08.009 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:0 AU: Ranjith, K. S.;Geethu, R.;Vijayakumar, K. P.;Rajendrakumar, R. T.;
10:552:3 Effect of precursor medium on structural, electrical and optical properties of sprayed polycrystalline ZnO thin films
DOI:10.1016/j.mseb.2010.06.012 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:16 AU: Vimalkumar, T. V.;Poornima, N.;Kartha, C. Sudha;Vijayakumar, K. P.;
10:552:4 Synthesis and characterization of ZnO nanorod films for photocatalytic disinfection of contaminated water
DOI:10.1016/j.tsf.2010.08.139 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Rodriguez, Juan;Paraguay-Delgado, F.;Lopez, Alcides;Alarcon, Julio;Estrada, Walter;
10:552:5 Intermittent spray pyrolytic growth of nanocrystalline and highly oriented transparent conducting ZnO thin films: Effect of solution spray rate
DOI:10.1016/j.jallcom.2013.08.136 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:3 AU: Mahajan, C. M.;Takwale, M. G.;
10:552:6 Effect of substrate temperature on the properties of ZnO thin films prepared by spray pyrolysis
DOI:10.1016/j.mssp.2012.11.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:13 AU: Zahedi, F.;Dariani, R. S.;Rozati, S. M.;
10:552:7 Electrical and optical properties of nanostructured indium doped zinc oxide thin films deposited by ultrasonic chemical spray technique, starting from zinc acetylacetonate and indium chloride
DOI:10.1016/j.mssp.2014.05.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Castaneda, L.;Maldonado, A.;Vega Perez, J.;Olvera, M. de la L.;Torres-Torres, C.;
10:552:8 Effect of precursor concentration on structural and optical properties of ZnO microrods by spray pyrolysis
DOI:10.1016/j.tsf.2011.09.006 JN:THIN SOLID FILMS PY:2012
TC:11 AU: Zahedi, F.;Dariani, R. S.;
10:552:9 Mineral wool fibers incorporated with cuprous oxide for visible light photocatalytic inactivation of Escherichia coli
DOI:10.1016/j.ceramint.2013.10.122 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Zhu, Qingwei;Zhang, Yihe;Wu, Fade;Tan, Danjun;Wang, Pengqi;Chu, Paul. K.;
10:552:10 Effect of gamma-irradiation on the growth of ZnO nanorod films for photocatalytic disinfection of contaminated water
DOI:10.1016/j.jcis.2011.08.025 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:8 AU: Alarcon, Julio;Ponce, Silvia;Paraguay-Delgado, Francisco;Rodriguez, Juan;
10:553:1 Room-temperature ferromagnetic Mn-doped ZnO nanocrystal synthesized by hydrothermal method under high magnetic field
DOI:10.1016/j.mseb.2010.03.037 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:21 AU: Yang, T.;Li, Y.;Zhu, M. Y.;Li, Y. B.;Huang, J.;Jin, H. M.;Hu, Y. M.;
10:553:2 Carriers-mediated ferromagnetic enhancement in Al-doped ZnMnO dilute magnetic semiconductors
DOI:10.1016/j.matchar.2011.08.003 JN:MATERIALS CHARACTERIZATION PY:2011
TC:5 AU: Saleem, Murtaza;Siddiqi, Saadat A.;Atiq, Shahid;Anwar, M. Sabieh;Hussain, Irshad;Alam, Shahzad;
10:553:3 Room temperature ferromagnetism in sol-gel prepared Co-doped ZnO
DOI:10.1016/j.mssp.2012.02.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:8 AU: Varshney, Prateek;Srinet, Gunjan;Kumar, Ravindra;Sajal, Vivek;Sharma, S. K.;Knobel, M.;Chandra, Jeewan;Gupta, Govind;Kulriya, P. K.;
10:553:4 Effect of shallow donors on Curie-Weiss temperature of Co-doped ZnO
DOI:10.1016/j.jmmm.2014.07.041 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:0 AU: Guo, Shuxia;Li, Jiwu;Du, Zuliang;
10:553:5 Structural and luminescence correlation of annealed Er-ZnO/Si thin films deposited by AACVD process
DOI:10.1016/j.mseb.2013.07.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:10 AU: Elleuch, R.;Salhi, R.;Maalej, N.;Deschanvres, J-L;Maalej, R.;
10:553:6 The effect of Al3+ co-doping on the structural, magnetic and optical properties of ZnCoO thin films
DOI:10.1016/j.mssp.2011.01.012 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2011
TC:8 AU: Cao, P.;Bai, Y.;Zhao, D. X.;Shen, D. Z.;
10:553:7 Room temperature ferromagnetism in Eu-doped ZnO nanoparticulate powders prepared by combustion reaction method
DOI:10.1016/j.jmmm.2013.12.028 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:2 AU: Franco, A., Jr.;Pessoni, H. V. S.;Soares, M. P.;
10:553:8 Role of cobalt in room-temperature ferromagnetic Co-doped ZnO thin films
DOI:10.1063/1.3698304 JN:AIP ADVANCES PY:2012
TC:8 AU: Wang, C. C.;Liu, M.;Man, B. Y.;Chen, C. S.;Jiang, S. Z.;Yang, S. Y.;Gao, X. G.;Xu, S. C.;Hu, B.;Sun, Z. C.;Guo, J. J.;Hou, J.;
10:553:9 Ac magnetic susceptibility measurements in nanoparticulate powders of iron-doped ZnO
DOI:10.1016/j.jmmm.2011.09.032 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:4 AU: Barbosa, G. F.;Machado, F. L. A.;Rodrigues, A. R.;Alves, T. E. P.;Franco, A., Jr.;
10:554:1 Facile and efficient one-pot solvothermal and microwave-assisted synthesis of stable colloidal solutions of MFe2O4 spinel magnetic nanoparticles
DOI:10.1007/s11051-012-1034-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:17 AU: Solano, Eduardo;Perez-Mirabet, Leonardo;Martinez-Julian, Fernando;Guzman, Roger;Arbiol, Jordi;Puig, Teresa;Obradors, Xavier;Yanez, Ramon;Pomar, Alberto;Ricart, Susagna;Ros, Josep;
10:554:2 One-pot synthesis of stable colloidal solutions of MFe2O4 nanoparticles using oleylamine as solvent and stabilizer
DOI:10.1016/j.materresbull.2012.11.086 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:8 AU: Perez-Mirabet, Leonardo;Solano, Eduardo;Martinez-Julian, Fernando;Guzman, Roger;Arbiol, Jordi;Puig, Teresa;Obradors, Xavier;Pomar, Alberto;Yanez, Ramon;Ros, Josep;Ricart, Susagna;
10:554:3 Large, Negative Magnetoresistance in an Oleic Acid-Coated Fe3O4 Nanocrystal Self-Assembled Film
DOI:10.1021/am402630r JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:1 AU: Kohiki, Shigemi;Kinoshita, Tomoki;Nara, Koichiro;Akiyama-Hasegawa, Kotone;Mitome, Masanori;
10:554:4 Magnetoresistance of Drop-Cast Film of Cobalt-Substituted Magnetite Nanocrystals
DOI:10.1021/am500713k JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Kohiki, Shigemi;Nara, Koichiro;Mitome, Masanori;Tsuya, Daiju;
10:554:5 Influence of 150 MeV Ni11+ swift heavy ion irradiation on CuFe2O4 thin films prepared by radio frequency magnetron sputtering: Modification on structure and surface morphology
DOI:10.1016/j.tsf.2011.07.029 JN:THIN SOLID FILMS PY:2011
TC:1 AU: Balaji, M.;Asokan, K.;Kanjilal, D.;Sanjeeviraja, C.;Rajasekaran, T. R.;Padiyan, D. Pathinettam;
10:554:6 Magnetic and Magnetoelectric Properties of Self-Assembled Fe2.5Mn0.5O4 Nanocrystals
DOI:10.1021/am2008085 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:4 AU: Kohiki, Shigemi;Okada, Koichi;Mitome, Masanori;Kohno, Atsushi;Kinoshita, Tomoki;Iyama, Koichiro;Tsunawaki, Fumiya;Deguchi, Hiroyuki;
10:554:7 Nanocrystalline Ni0.8Zn0.2Fe2O4 films prepared by spray deposition from polyol-mediated sol: Microstructural and magnetic characterization
DOI:10.1016/j.tsf.2009.07.188 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Beji, Z.;Smiri, L. S.;Vaulay, M. -J.;Herbst, F.;Ammar, S.;Fievet, F.;
10:554:8 Novel one-pot preparation of CoFe2O4-Ag nanocrystalline powders
DOI:10.1016/j.matlet.2013.09.057 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Soares, F. H., Jr.;Pinheiro, A. V. B.;Morales, M. A.;Soares, J. M.;
10:554:9 Design of ZnO nanostructured films: Characterization and ecotoxicological studies
DOI:10.1016/j.tsf.2011.01.257 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Brayner, Roberta;Sicard, Clemence;Ben Sassi, Hanen;Beji, Zyed;Yepremian, Claude;Coute, Alain;Fievet, Fernand;
10:555:1 Effect of sputtering parameters on photoluminescence properties of Al doped ZnO films deposited on Si substrates
DOI:10.1016/j.ceramint.2013.09.034 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Chen, Haixia;Ding, Jijun;Guo, Wenge;
10:555:2 Multiplesite structure and photoluminescence properties of Eu3+ doped MgO nanocrystals
DOI:10.1007/s00339-010-6027-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:11 AU: Peng, Lingling;Wang, Yuhua;Wang, Zhaofeng;Dong, Qizheng;
10:555:3 From embedded nanoislands to thin films: Topographic and optical properties of europium oxide on MgO(001) films
DOI:10.1103/PhysRevB.86.085448 JN:PHYSICAL REVIEW B PY:2012
TC:0 AU: Stavale, Fernando;Pascua, Leandro;Nilius, Niklas;Freund, Hans-Joachim;
10:555:4 Non-rare earth white emission phosphor: Ti-doped MgAl2O4
DOI:10.1063/1.4788929 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Lim, J. H.;Kim, B. N.;Kim, Y.;Kang, S.;Xie, R. J.;Chong, I. S.;Morita, K.;Yoshida, H.;Hiraga, K.;
10:555:5 Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence
DOI:10.1063/1.3647622 JN:APPLIED PHYSICS LETTERS PY:2011
TC:11 AU: Likovich, Edward M.;Jaramillo, Rafael;Russell, Kasey J.;Ramanathan, Shriram;Narayanamurti, Venkatesh;
10:555:6 Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (100) substrates
DOI:10.1016/j.apsusc.2009.10.038 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Han, J. H.;No, Y. S.;Kim, T. W.;Lee, J. Y.;Kim, J. Y.;Choi, W. K.;
10:555:7 Polymer-assisted synthesis and luminescence properties of MgAl2O4:Tb nanopowder
DOI:10.1016/j.optmat.2011.04.011 JN:OPTICAL MATERIALS PY:2011
TC:5 AU: Hassanzadeh-Tabrizi, S. A.;
10:555:8 Effect of water to surfactant ratio (R) on the particle size of MgAl2O4 nanoparticle prepared via reverse micelle process
DOI:10.1016/j.jallcom.2009.10.213 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Chandradass, J.;Balasubramanian, M.;Bae, Dong Sik;Kim, Jongryoul;Kim, Ki Hyeon;
10:555:9 Effect of additives on the sintering of MgAl2O4
DOI:10.1016/j.jallcom.2013.10.250 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Kim, Taehyung;Kim, Donghyun;Kang, Shinhoo;
10:556:1 Room temperature solid-state synthesis and ethanol sensing properties of sea-urchin-like ZnO nanostructures
DOI:10.1016/j.matlet.2010.04.047 JN:MATERIALS LETTERS PY:2010
TC:10 AU: Jia, Xiaohua;Fan, Huiqing;
10:556:2 Hydrothermal synthesis and gas sensing properties of single-crystalline ultralong ZnO nanowires
DOI:10.1007/s00339-009-5457-y JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:17 AU: Li, Li;Yang, Heqing;Zhao, Hua;Yu, Jie;Ma, Junhu;An, Lijuan;Wang, Xuewen;
10:556:3 Color tunable ZnO nanorods by Eu and Tb co-doping for optoelectronic applications
DOI:10.1007/s00339-013-8095-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Pal, Partha P.;Manam, J.;
10:556:4 Controlled synthesis of star-shaped zinc oxide particles at low temperatures and their quantum size effect
DOI:10.1016/j.jallcom.2012.06.132 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:3 AU: Ueno, Shintaro;Fujihara, Shinobu;
10:556:5 Optical and electro-catalytic properties of bundled ZnO nanowires grown on a ITO substrate
DOI:10.1007/s11051-009-9748-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:6 AU: Xia, Cao;Wang, Ning;Wang, Long;
10:556:6 Novel sea-urchin-like rutile microstructures synthesized by the thermal decomposition and oxidation of K2TiF6
DOI:10.1016/j.matlet.2014.01.165 JN:MATERIALS LETTERS PY:2014
TC:1 AU: VillaVelazquez-Mendoza, C. I.;Rodriguez-Mendoza, J. L.;Hodgkins, R. P.;Ibarra-Galvan, V.;Leal-Cruz, A. L.;Lopez-Valdivieso, A.;Pech-Canul, M. I.;
10:556:7 In situ growth of ZnO nanowires on Zn comb-shaped interdigitating electrodes and their photosensitive and gas-sensing characteristics
DOI:10.1016/j.materresbull.2012.08.040 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Li, Li;Yang, Fan;Yu, Jie;Wang, Xuewen;Zhang, Lina;Chen, Yan;Yang, Heqing;
10:556:8 Investigation of the Optimal Parameters in Hydrothermal Method for the Synthesis of ZnO Nanorods
DOI:10.1155/2014/430164 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Chen, Ying-Chung;Cheng, Huan-Yi;Yang, Cheng-Fu;Hsieh, Yuan-Tai;
10:556:9 Photoluminescence and thermoluminescence studies of Tb3+ doped ZnO nanorods
DOI:10.1016/j.mseb.2013.01.006 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:8 AU: Pal, Partha P.;Manam, Jairam;
10:557:1 Controlled Growth of Well-Aligned GaS Nanohornlike Structures and Their Field Emission Properties
DOI:10.1021/am200339v JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:11 AU: Sinha, Godhuli;Panda, Subhendu K.;Datta, Anuja;Chavan, Padmakar G.;Shinde, Deodatta R.;More, Mahendra A.;Joag, D. S.;Patra, Amitava;
10:557:2 Structural characterization of In2O3 hierarchical microwires synthesized through decomposition thermal treatment of InSe single crystal
DOI:10.1016/j.matchemphys.2012.06.057 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Siciliano, Tiziana;Tepore, Marco;Genga, Alessandra;Micocci, Gioacchino;Tepore, Antonio;Filippo, Emanuela;
10:557:3 Growth studies and characterization of In2S3 films prepared by hydrothermal method and their conversion to In2O3 films
DOI:10.1016/j.matchemphys.2011.08.014 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Zhang, Lina;Zhang, Wei;Yang, Haibin;Fu, Wuyou;Zhao, Wenyan;Zhao, Hui;Ma, Jinwen;
10:557:4 Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3
DOI:10.1016/j.mssp.2013.04.021 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:4 AU: Kraini, M.;Bouguila, N.;Halidou, I.;Timoumi, A.;Alaya, S.;
10:557:5 Enhanced Performance of Dye-Sensitized Solar Cells with Graphene/ZnO Nanoparticles Bilayer Structure
DOI:10.1155/2014/748319 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:5 AU: Hsu, Chih-Hung;Lai, Cheng-Chih;Chen, Lung-Chien;Chan, Po-Shun;
10:557:6 Magneto-optical characteristics of Mn-doped ZnO films deposited by ultrasonic spray pyrolysis
DOI:10.1016/j.mssp.2011.04.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:5 AU: Chen, Lung-Chien;Tien, Ching-Ho;Fu, Chia-Shien;
10:557:7 Phase and morphological transformations of GaS single crystal surface by thermal treatment
DOI:10.1016/j.apsusc.2012.08.031 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Filippo, E.;Siciliano, T.;Genga, A.;Micocci, G.;Siciliano, M.;Tepore, A.;
10:557:8 In2O3 films prepared by thermal oxidation of amorphous InSe thin films
DOI:10.1016/j.tsf.2011.10.015 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Siciliano, T.;Di Giulio, M.;Tepore, M.;Genga, A.;Micocci, G.;Tepore, A.;
10:557:9 In2O3 microbundles constructed with well-aligned single-crystalline nanorods: F127-directed self-assembly and enhanced gas sensing performance
DOI:10.1016/j.jcis.2010.10.033 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:8 AU: Li, Zhipeng;Yan, Hui;Yuan, Shiling;Fan, Yingju;Zhan, Jinhua;
10:557:10 Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes
DOI:10.1016/j.tsf.2010.12.014 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Chen, Lung-Chien;Tien, Ching-Ho;Luo, Yi-Min;Mu, Chien-Sheng;
10:558:1 A Molecular Precursor Approach to Tunable Porous Tin-Rich Indium Tin Oxide with Durable High Electrical Conductivity for Bioelectronic Devices
DOI:10.1021/cm103087p JN:CHEMISTRY OF MATERIALS PY:2011
TC:26 AU: Aksu, Yilmaz;Frasca, Stefano;Wollenberger, Ulla;Driess, Matthias;Thomas, Arne;
10:558:2 Methylmagesium Alkoxide Clusters with Mg4O4 Cubane- and Mg7O8 Biscubane-Like Cores: Organometallic Precursors for Low-Temperature Formation of MgO Nanoparticles with Variable Surface Defects
DOI:10.1021/cm9021535 JN:CHEMISTRY OF MATERIALS PY:2010
TC:17 AU: Heitz, Stephan;Aksu, Yilmaz;Merschjann, Christoph;Driess, Matthias;
10:558:3 Facile Molecular Approach to Transparent Thin-Film Field-Effect Transistors with High-Performance Using New Homo- and Heteroleptic Indium(III)-Tin(II) Single-Source Precursors
DOI:10.1021/cm300510y JN:CHEMISTRY OF MATERIALS PY:2012
TC:6 AU: Samedov, Kerim;Aksu, Yilmaz;Driess, Matthias;
10:558:4 Synthesis and characterization of smoke-like porous sol-gel indium tin oxide coatings on glass
DOI:10.1007/s10853-011-5797-9 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:7 AU: Das, Nilanjana;Biswas, Prasanta Kumar;
10:558:5 Microporous TiO2-WO3/TiO2 films with visible-light photocatalytic activity synthesized by micro arc oxidation and DC magnetron sputtering
DOI:10.1016/j.apsusc.2012.09.142 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Wu, Kee-Rong;Hung, Chung-Hsuang;Yeh, Chung-Wei;Wu, Jiing-Kae;
10:558:6 Molecular Heterobimetallic Approach to Li-Containing MgO Nanoparticles with Variable Li-Concentrations Using Lithium-Methylmagnesium Alkoxide Clusters
DOI:10.1021/cm100415m JN:CHEMISTRY OF MATERIALS PY:2010
TC:17 AU: Heitz, Stephan;Epping, Jan-Dirk;Aksu, Yilmaz;Driess, Matthias;
10:558:7 Vapor deposited sculptured nano-porous titania films by glancing angle deposition for efficiency enhancement in dye-sensitized solar cells
DOI:10.1016/j.tsf.2010.06.047 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Wong, Ming-Show;Lee, Ming-Fu;Chen, Ching-Lun;Huang, Chia-Hua;
10:558:8 Comment on "Methylmagesium Alkoxide Clusters with Mg4O4 Cubane- and Mg7O8 Biscubane-Like Cores: Organometallic Precursors for Low-Temperature Formation of MgO Nanoparticles with Variable Surface Defects"
DOI:10.1021/cm100601w JN:CHEMISTRY OF MATERIALS PY:2010
TC:0 AU: Parris, George E.;
10:558:9 Reply to Comment on "Methylmagnesium Alkoxide Clusters with Mg4O4 Cubane- and Mg7O8 Biscubane-Like Cores: Organometallic Precursors for Low-Temperature Formation of MgO Nanoparticles with Variable Surface Defects"
DOI:10.1021/cm1016917 JN:CHEMISTRY OF MATERIALS PY:2010
TC:0 AU: Heitz, Stephan;Aksu, Yilmaz;Merschjann, Christoph;Driess, Matthias;
10:559:1 Local transport properties, morphology and microstructure of ZnO decorated SiO2 nanoparticles
DOI:10.1088/0957-4484/21/41/415602 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Van Nostrand, Joseph E.;Cortez, Rebecca;Rice, Zachary P.;Cady, Nathaniel C.;Bergkvist, Magnus;
10:559:2 ZnO nanoparticle surface acoustic wave UV sensor
DOI:10.1063/1.3447932 JN:APPLIED PHYSICS LETTERS PY:2010
TC:24 AU: Chivukula, Venkata;Ciplys, Daumantas;Shur, Michael;Dutta, Partha;
10:559:3 Frequency hopping due to acousto-electric interaction in ZnO based surface acoustic wave oscillator
DOI:10.1063/1.3622327 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Dasgupta, Daipayan;Sreenivas, K.;
10:559:4 Ultrathin ZnO nanorods: facile synthesis, characterization and optical properties
DOI:10.1088/0957-4484/21/6/065603 JN:NANOTECHNOLOGY PY:2010
TC:8 AU: Cao, Xia;Wang, Ning;Wang, Long;
10:559:5 Electrical conductivity of cationized ferritin decorated gold nanoshells
DOI:10.1063/1.4729800 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Cortez, Rebecca;Slocik, Joseph M.;Van Nostrand, Joseph E.;Halas, Naomi J.;Naik, Rajesh R.;
10:559:6 A passive wireless hydrogen surface acoustic wave sensor based on Pt-coated ZnO nanorods
DOI:10.1088/0957-4484/21/9/095503 JN:NANOTECHNOLOGY PY:2010
TC:22 AU: Huang, Ya-Shan;Chen, Yung-Yu;Wu, Tsung-Tsong;
10:559:7 High-overtone bulk acoustic resonator as passive ground penetrating RADAR cooperative targets
DOI:10.1063/1.4798474 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Friedt, J-M.;Saintenoy, A.;Chretien, S.;Baron, T.;Lebrasseur, E.;Laroche, T.;Ballandras, S.;Griselin, M.;
10:559:8 Acoustic plate mode propagation and interaction with ultraviolet light in periodic AIN-on-sapphire structure
DOI:10.1063/1.3557507 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Chivukula, Venkata;Ciplys, Daumantas;Jain, Rakesh;Yang, Jinwei;Gaska, Remis;Shur, Michael;
10:559:9 Surface acoustic wave devices as passive buried sensors
DOI:10.1063/1.3504650 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Friedt, J. -M.;Retornaz, T.;Alzuaga, S.;Baron, T.;Martin, G.;Laroche, T.;Ballandras, S.;Griselin, M.;Simonnet, J. -P.;
10:559:10 Multifunctional ZnO-biopolymer nanocomposite coatings for health-care polymer foams and fabrics
DOI:10.1002/app.36831 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:2 AU: Sanoop, P. K.;Mahesh, K. V.;Nampoothiri, K. M.;Mangalaraja, R. V.;Ananthakumar, S.;
10:560:1 Fast one-step synthesis of ZnO sub-microspheres in PEG200
DOI:10.1007/s10853-013-7936-y JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:4 AU: Xie, Xin-Yuan;Li, Li-Yun;Zhan, Pei;Liang, Ming;Xie, Shu-Ming;Meng, Jian-Xin;Bai, Yan;Zheng, Wen-Jie;
10:560:2 Electrical properties of Al2O3-doped ZnO varistors prepared by sol-gel process for device miniaturization
DOI:10.1016/j.ceramint.2011.05.039 JN:CERAMICS INTERNATIONAL PY:2012
TC:11 AU: Cheng, Li-Hong;Zheng, Liao-Ying;Meng, Lei;Li, Guo-Rong;Gu, Yan;Zhang, Fu-Ping;Chu, Rui-Qing;Xu, Zhi-Jun;
10:560:3 Optimal parameters for synthesizing single phase spinel-type Co2SnO4 by sol-gel technique: Structure determination and microstructure evolution
DOI:10.1016/j.jallcom.2013.05.146 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: Aguilar-Martinez, J. A.;Esneider-Alcala, M. A.;Hernandez, M. B.;Pech Canul, M. I.;Shaji, S.;
10:560:4 Correlation between sintering pressure and electrical properties of hot-press sintered gallium arsenide-polyaniline-polyethylene composite varistors
DOI:10.1016/j.mssp.2013.09.011 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Parhizkar, M.;Aref, S. Mohammadi;Ghafouri, M.;Olad, A.;Bidadi, H.;
10:560:5 Effect of ZnO doping on microstructural and electrical properties of SnO2-Ta2O5 based varistors
DOI:10.1016/j.jallcom.2012.02.172 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:11 AU: He, Jianfeng;Peng, Zhijian;Fu, Zhiqiang;Wang, Chengbiao;Fu, Xiuli;
10:560:6 Hydrothermal synthesis of ZnO thin films and its electrical characterization
DOI:10.1016/j.matlet.2012.04.065 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Urgessa, Zelalem N.;Oluwafemi, Oluwatobi S.;Botha, Johannes R.;
10:560:7 Effect of Sm2O3 on the microstructure and electrical properties of SnO2-based varistors
DOI:10.1016/j.ceramint.2011.04.139 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Bastami, H.;Taheri-Nassaj, E.;
10:560:8 Facile synthesis, spectral properties and formation mechanism of sulfur nanorods in PEG-200
DOI:10.1016/j.materresbull.2012.06.043 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:3 AU: Xie, Xin-yuan;Li, Li-yun;Zheng, Pu-sheng;Zheng, Wen-jie;Bai, Yan;Cheng, Tian-feng;Liu, Jie;
10:560:9 Characterisation of SnO2-CoO-MnO-Nb2O5 ceramics
DOI:10.1016/j.jeurceramsoc.2009.06.007 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:8 AU: Fan, Jiwei;Zhao, Huijun;Xi, Yanjun;Mu, Yunchao;Tang, Feng;Freer, Robert;
10:561:1 Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode
DOI:10.1063/1.4864282 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Kang, Jang-Won;Choi, Yong-Seok;Kim, Byeong-Hyeok;Kang, Chang Goo;Lee, Byoung Hun;Tu, C. W.;Park, Seong-Ju;
10:561:2 A novel regrowth mechanism and enhanced optical properties of Mg0.25Zn0.75O nanorods subjected to vapor-confined face-to-face annealing
DOI:10.1039/c4tc01407c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:1 AU: Nam, Giwoong;Kim, Byunggu;Park, Youngbin;Park, Seonhee;Moon, Jiyun;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young;
10:561:3 Preparation and optical properties of Mg-doped ZnO nanorods
DOI:10.1016/j.apsusc.2014.08.110 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Guo, N.;Wei, X. Q.;Zhao, R. R.;Xu, X. J.;
10:561:4 Electroluminescence from a suspended tip-synthesized nano ZnO dot
DOI:10.1063/1.3570642 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Han, Jun Hyun;Yoshimizu, Norimasa;Jiang, Cheng;Lal, Amit;Lee, Chung Hoon;
10:561:5 Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method
DOI:10.1007/s00339-010-5722-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:6 AU: Bano, N.;Hussain, I.;Nur, O.;Willander, M.;Kwack, H. S.;Dang, D. Le Si;
10:561:6 Stability of ZnMgO oxide in a weak alkaline solution
DOI:10.1016/j.tsf.2011.10.033 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Diler, E.;Rioual, S.;Lescop, B.;Thierry, D.;Rouvellou, B.;
10:562:1 Epitaxial growth of ZnO nanocrystals at ZnWO4(0 1 0) cleaved surface
DOI:10.1016/j.jcrysgro.2010.10.172 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:9 AU: Atuchin, V. V.;Galashov, E. N.;Kozhukhov, A. S.;Pokrovsky, L. D.;Shlegel, V. N.;
10:562:2 Synthesis and optical property of bouquet-like ZnO arrays
DOI:10.1016/j.matlet.2013.03.042 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Sun, Fazhe;Tan, Fatang;Wang, Wei;Qiao, Xueliang;
10:562:3 Optical properties of well-aligned ZnO nanostructure arrays synthesized by an electric field-assisted aqueous solution method
DOI:10.1016/j.ceramint.2014.03.157 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Rouhi, Jalal;Alimanesh, Mahmoud;Dalvand, Ramazanali;Ooi, C. H. Raymond;Mahmud, Shahrom;Mahmood, Mohamad Rusop;
10:562:4 Polyoxometalate-assisted synthesis of the ZnO polyhedra in an alkali solution and their photoelectrical properties
DOI:10.1016/j.matlet.2012.07.100 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Sang, Xiaojing;Li, Jiansheng;Chen, Weilin;Wang, Enbo;
10:562:5 Synthesis and field emission properties of ZnO nanorods on Cu substrate
DOI:10.1016/j.matlet.2012.05.066 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Huang, Yong;Yuan, Guoliang;
10:562:6 Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface
DOI:10.1016/j.jcrysgro.2014.01.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:3 AU: Galashov, E. N.;Atuchin, V. V.;Kozhukhov, A. S.;Pokrovsky, L. D.;Shlegel, V. N.;
10:562:7 Investigations on structural, optical and electrical properties of p-type ZnO nanorods using hydrothermal method
DOI:10.1016/j.tsf.2011.11.010 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Thangavel, R.;Chang, Yia-Chung;
10:562:8 Synthesis and characterization of twined flat-peach-like ZnO
DOI:10.1016/j.matlet.2012.02.047 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Lv, Chunyan;Chi, Wenyang;Zhang, Qian;He, Chan;Li, Jixue;
10:562:9 Investigation of the physical origins of etching LiNbO3 during Ti in-diffusion
DOI:10.1063/1.3367742 JN:APPLIED PHYSICS LETTERS PY:2010
TC:2 AU: Sivan, Vijay;Holland, Anthony;O'Mullane, Anthony P.;Mitchell, Arnan;
10:562:10 Polyoxometalate-assisted electrochemical deposition of ZnO spindles in an ionic liquid
DOI:10.1016/j.matlet.2009.12.034 JN:MATERIALS LETTERS PY:2010
TC:6 AU: Ju, Mingliang;Li, Qiuyu;Gu, Jianmin;Xu, Rui;Li, Yangguang;Wang, Xinlong;Wang, Enbo;
10:563:1 Enhanced visible light photocatalysis by manganese doping or rapid crystallization with ZnO nanoparticles
DOI:10.1016/j.matchemphys.2011.07.018 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:30 AU: Mahmood, Mohammad Abbas;Baruah, Sunandan;Dutta, Joydeep;
10:563:2 Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film
DOI:10.1016/j.jallcom.2011.08.033 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Jeon, Ju-Won;Jeon, Dae-Woo;Sahoo, Trilochan;Kim, Myoung;Baek, Jong-Hyeob;Hoffman, Jessica Lynn;Kim, Nam Soo;Lee, In-Hwan;
10:563:3 Visible light photocatalysis of mixed phase zinc stannate/zinc oxide nanostructures precipitated at room temperature in aqueous media
DOI:10.1016/j.ceramint.2014.01.094 JN:CERAMICS INTERNATIONAL PY:2014
TC:3 AU: Khan, Muhammad Najam;Al-Hinai, Muna;Al-Hinai, Ashraf;Dutta, Joydeep;
10:563:4 Surface morphology and electrical transport of rapid thermal annealed chromium-doped indium zinc oxides: The influence of zinc interstitials and out-diffusion
DOI:10.1063/1.4845655 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Hsu, C. Y.;
10:563:5 Properties of hydrothermally synthesized Zn2SnO4 nanoparticles using Na2CO3 as a novel mineralizer
DOI:10.1016/j.matchar.2010.05.011 JN:MATERIALS CHARACTERIZATION PY:2010
TC:10 AU: Annamalai, Alagappan;Carvalho, Daniel;Wilson, K. C.;Lee, Man-Jong;
10:563:6 Band gap engineering of indium zinc oxide by nitrogen incorporation
DOI:10.1016/j.mseb.2014.05.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Ortega, J. J.;Aguilar-Frutis, M. A.;Alarcon, G.;Falcony, C.;Mendez-Garcia, V. H.;Araiza, J. J.;
10:563:7 Effects of indium concentration on the efficiency of amorphous In-Zn-O/SiOx/n-Si hetero-junction solar cells
DOI:10.1016/j.solmat.2013.11.003 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:5 AU: Fang, Hau-Wei;Hsieh, Tsung-Eong;Juang, Jenh-Yih;
10:563:8 Synthesis and post-annealing effects on the transport properties of thermoelectric oxide (ZnO)(m)In2O3 ceramics
DOI:10.1016/j.ceramint.2011.06.068 JN:CERAMICS INTERNATIONAL PY:2012
TC:4 AU: Wang, L. M.;Chang, Ching-Yu;Yeh, Shau-Tin;Chen, Shinn Wei;Peng, Zi An;Bair, Shun Chang;Lee, D. S.;Liao, F. C.;Kuo, Y. K.;
10:563:9 The preparation of AZO/a-Si/c-Si heterojunction structure on p-type silicon substrate for solar cell application
DOI:10.1016/j.matlet.2014.09.066 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Xu, Shuoshuo;Liang, Zongcun;Shen, Hui;
10:564:1 Morphology and wettability of ZnO nanostructures prepared by hydrothermal method on various buffer layers
DOI:10.1016/j.apsusc.2013.09.098 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Li, Bao-jia;Huang, Li-jing;Zhou, Ming;Ren, Nai-fei;
10:564:2 Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor
DOI:10.1557/JMR.2010.0103 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:19 AU: Hwang, Young Hwan;Seo, Seok-Jun;Bae, Byeong-Soo;
10:564:3 Comparison of structures and hydrophobicity of femtosecond and nanosecond laser-etched surfaces on silicon
DOI:10.1016/j.apsusc.2012.08.092 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Li, Bao-jia;Zhou, Ming;Zhang, Wei;Amoako, George;Gao, Chuan-yu;
10:564:4 Effect of aluminum doping on a solution-processed zinc-tin-oxide thin-film transistor
DOI:10.1007/s13391-013-2185-4 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:7 AU: Lee, Yong-Gu;Choi, Woon-Seop;
10:564:5 Ageing effects on the wettability behavior of laser textured silicon
DOI:10.1016/j.apsusc.2010.10.030 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Nunes, B.;Serro, A. P.;Oliveira, V.;Montemor, M. F.;Alves, E.;Saramago, B.;Colaco, R.;
10:564:6 Microstructure and nanomechanical properties of Fe+ implanted silicon
DOI:10.1016/j.apsusc.2013.07.129 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Nunes, B.;Magalhaes, S.;Franco, N.;Alves, E.;Colaco, R.;
10:564:7 Solution-Processed Zinc-Tin-Oxide Thin-Film Transistor by Electrohydrodynamic Spray
DOI:10.1007/s13391-012-1069-3 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:4 AU: Kwack, Young-Jin;Choi, Woon-Seop;
10:564:8 Improved Electrical Properties of Zinc-Tin Oxide TFTs by Inkjet Process Optimization
DOI:10.1007/s13391-013-3303-z JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:1 AU: Lee, Seung-Hyun;Choi, Woon-Seop;
10:564:9 Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si
DOI:10.1557/JMR.2010.0117 JN:JOURNAL OF MATERIALS RESEARCH PY:2010
TC:3 AU: Xu, Zhi-Hui;Park, Young-Bae;Li, Xiaodong;
10:565:1:1 Preparation and characterization of multilayer NiO nano-products via electrospinning
DOI:10.1016/j.apsusc.2013.07.118 JN:APPLIED SURFACE SCIENCE PY:2013
TC:7 AU: Liu, Mengzhu;Wang, Yongpeng;Li, Pengchong;Cheng, Zhiqiang;Zhang, Yongqiang;Zhang, Mingyue;Hu, Meijuan;Li, Junfeng;
10:565:1:2 Preparation and Characterization of TiO2 Nanofibers via Using Polylactic Acid as Template
DOI:10.1002/APP.38166 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:6 AU: Liu, Mengzhu;Cheng, Zhiqiang;Yan, Juntao;Qiang, Linhui;Ru, Xin;Liu, Fei;Ding, Dawei;Li, Junfeng;
10:565:1:3 Electrospun Mn2O3 nanowrinkles and Mn3O4 nanorods: Morphology and catalytic application
DOI:10.1016/j.apsusc.2014.05.215 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Liu, Mengzhu;Wang, Yongpeng;Cheng, Zhiqiang;Zhang, Mingyue;Hu, Meijuan;Li, Junfeng;
10:565:1:4 Function of NaOH hydrolysis in electrospinning ZnO nanofibers via using polylactide as templates
DOI:10.1016/j.mseb.2014.05.004 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2014
TC:1 AU: Liu, Mengzhu;Wang, Yongpeng;Cheng, Zhiqiang;Song, Lihua;Zhang, Mingyue;Hu, Meijuan;Li, Junfeng;
10:565:1:5 Optimization and investigation of the governing parameters in electrospinning the home-made poly(l-lactide-co-epsilon-caprolactone-diOH)
DOI:10.1002/app.39592 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:4 AU: Liu, Mengzhu;Cheng, Zhiqiang;Jin, Yi;Ru, Xin;Ding, Dawei;Li, Junfeng;
10:565:2:1 Studies of influence of structural properties and thickness of NiO thin films on formaldehyde detection
DOI:10.1016/j.tsf.2011.04.180 JN:THIN SOLID FILMS PY:2011
TC:14 AU: Castro-Hurtado, I.;Herran, J.;Mandayo, G. G.;Castano, E.;
10:565:2:2 SnO2-nanowires grown by catalytic oxidation of tin sputtered thin films for formaldehyde detection
DOI:10.1016/j.tsf.2011.10.140 JN:THIN SOLID FILMS PY:2012
TC:12 AU: Castro-Hurtado, I.;Herran, J.;Ga Mandayo, G.;Castano, E.;
10:565:2:3 Conductometric formaldehyde gas sensors. A review: From conventional films to nanostructured materials
DOI:10.1016/j.tsf.2013.04.083 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Castro-Hurtado, I.;Mandayo, G. G.;Castano, E.;
10:565:3:1 Real-Time Characterization of Electrospun PVP Nanofibers as Sensitive Layer of a Surface Acoustic Wave Device for Gas Detection
DOI:10.1155/2014/243037 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:1 AU: Matatagui, D.;Fernandez, M. J.;Santos, J. P.;Fontecha, J.;Sayago, I.;Horrillo, M. C.;Gracia, I.;Cane, C.;
10:565:3:2 Mesoporous In2O3: Effect of Material Structure on the Gas Sensing
DOI:10.1155/2011/654715 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:1 AU: Cheng, Z. X.;Ren, X. H.;Xu, J. Q.;Pan, Q. Y.;
10:566:1 Optical switches based on CdS single nanowire
DOI:10.1016/j.materresbull.2010.06.007 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:15 AU: Xi, Yi;Hu, Chenguo;Zheng, Chunhua;Zhang, Hulin;Yang, Rusen;Tian, Yongshu;
10:566:2 Novel combined sonochemical/solvothermal syntheses, characterization and optical properties of CdS nanorods
DOI:10.1016/j.powtec.2012.08.027 JN:POWDER TECHNOLOGY PY:2013
TC:4 AU: Phuruangrat, Anukorn;Thongtem, Titipun;Thongtem, Somchai;
10:566:3 Uniform Bi2S3 nanorods-assembled hollow spheres with excellent electrochemical hydrogen storage abilities
DOI:10.1016/j.ijhydene.2013.10.007 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:4 AU: Jin, Rencheng;Li, Guihua;Xu, Yanbin;Liu, Junshen;Chen, Gang;
10:566:4 Sensitive optical switch based on Bi2S3 single nanowire and nanowire film
DOI:10.1016/j.jallcom.2014.05.193 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Yang, Qi;Chen, Lin;Hu, Chenguo;Wang, Shuxia;Zhang, Jicheng;Wu, Weidong;
10:566:5 A simple one-step synthesis of ZnS nanoparticles via salt-alkali-composited-mediated method and investigation on their comparative photocatalytic activity
DOI:10.1016/j.materresbull.2012.09.070 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:4 AU: Xiang, Donghu;Zhu, Yabo;He, Zhanjun;Liu, Zhangsheng;Luo, Jin;
10:566:6 Comparative study of ZnO nanostructures grown on silicon (100) and oxidized porous silicon substrates with and without Au catalyst by chemical vapor transport and condensation
DOI:10.1016/j.jallcom.2011.01.041 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:11 AU: Rajabi, M.;Dariani, R. S.;Zad, A. Iraji;
10:566:7 Synthesis, characterization and optical properties of US nanorods by a simple solution chemistry method
DOI:10.1016/j.mseb.2009.10.035 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:5 AU: Chen, Shutang;Zhang, Xiaoling;Zhang, Qiuhua;Yan, Jilin;Tan, Weihong;
10:567:1 Catalyst-free synthesis, morphology evolution and optical property of one-dimensional aluminum nitride nanostructure arrays
DOI:10.1016/j.jallcom.2010.05.021 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Li, Haibing;Wang, W. J.;Song, B.;Wu, R.;Li, J.;Sun, Y. F.;Zheng, Y. F.;Jian, J. K.;
10:567:2 Single-step, catalyst-free plasma-assisted synthesis and growth mechanism of single-crystalline aluminum nitride nanorods
DOI:10.1063/1.3517507 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Huang, S. Y.;Cheng, Q. J.;Xu, S.;Ostrikov, K.;
10:567:3 Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering
DOI:10.1063/1.4757298 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Belkerk, B. E.;Soussou, A.;Carette, M.;Djouadi, M. A.;Scudeller, Y.;
10:567:4 Preparation and Optical Properties of Free-Standing Transparent Aluminum Nitride Film Assembled by Aligned Nanorods
DOI:10.1111/j.1551-2916.2011.05061.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:1 AU: Li, Jia-Jie;Song, Bo;Wu, Rong;Li, Jin;Jian, Ji-Kang;
10:567:5 Processing and Characterization of Aluminum Nitride Ceramics for High Thermal Conductivity
DOI:10.1002/adem.201400078 JN:ADVANCED ENGINEERING MATERIALS PY:2014
TC:1 AU: Lee, Hyun Min;Bharathi, Kamala;Kim, Do Kyung;
10:567:6 Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature
DOI:10.1063/1.4903220 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Belkerk, B. E.;Bensalem, S.;Soussou, A.;Carette, M.;Al Brithen, H.;Djouadi, M. A.;Scudeller, Y.;
10:567:7 Growth of AIN nanobelts, nanorings and branched nanostructures
DOI:10.1016/j.jallcom.2010.10.159 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Li, H. B.;Wu, R.;Li, J.;Sun, Y. F.;Zheng, Y. F.;Jian, J. K.;
10:567:8 Synthesis of Mn-Doped AlN Nanostructures via Chemical Vapor Deposition
DOI:10.1080/10584587.2013.789382 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Wu, Rong;Jiang, Nannan;Jian, Jikang;Ren, Huihui;Li, Jin;Sun, Yanfei;
10:567:9 Investigation on Thermal Conductivity of Aluminum Nitride Ceramics by FT-Raman Spectroscopy
DOI:10.1111/j.1551-2916.2010.03704.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:5 AU: Lee, Hyeon-Keun;Kim, Do Kyung;
10:567:10 Thermal conductivity of AlN thin films deposited by RF magnetron sputtering
DOI:10.1016/j.mssp.2011.04.007 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:7 AU: Park, Min-Ho;Kim, Sang-Ho;
10:567:11 Interfacial Microstructure Evolution of (B, Al)N Films Grown on Diamond Substrates
DOI:10.1016/j.tsf.2011.02.012 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Song, Jen-Hao;Huang, Jow-Lay;Sung, James C.;Wang, Sheng-Chang;Lu, Horng-Hwa;Lii, Ding-Fwu;
10:568:1 A facile synthesis method of hierarchically porous NiO nanosheets
DOI:10.1016/j.matlet.2011.11.063 JN:MATERIALS LETTERS PY:2012
TC:28 AU: Xia, Q. X.;Hui, K. S.;Hui, K. N.;Hwang, D. H.;Lee, S. K.;Zhou, W.;Cho, Y. R.;Kwon, S. H.;Wang, Q. M.;Son, Y. G.;
10:568:2 Structural, electrical and mechanical properties of NiO thin films grown by pulsed laser deposition
DOI:10.1016/j.apsusc.2010.07.006 JN:APPLIED SURFACE SCIENCE PY:2010
TC:8 AU: Fasaki, I.;Koutoulaki, A.;Kompitsas, M.;Charitidis, C.;
10:568:3 Synthesis and characterization of nickel oxide thin films deposited on glass substrates using spray pyrolysis
DOI:10.1016/j.apsusc.2014.04.134 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Jlassi, M.;Sta, I.;Hajji, M.;Ezzaouia, H.;
10:568:4 A La10Si5NbO27.5 based electrochemical sensor using nano-structured NiO sensing electrode for detection of NO2
DOI:10.1016/j.matlet.2013.07.032 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Wang, Ling;Han, Bingxu;Dai, Lei;Li, Yuehua;Zhou, Huizhu;Wang, Huan;
10:568:5 Influences of process parameters on texture and microstructure of NiO films
DOI:10.1016/j.tsf.2011.01.057 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Kuo, T. Y.;Chen, S. C.;Peng, W. C.;Lin, Y. C.;Lin, H. C.;
10:568:6 Physicochemical properties of cubic Ni complex powders synthesized using urotropine chelating ligand for solid oxide fuel cells
DOI:10.1016/j.apt.2013.09.013 JN:ADVANCED POWDER TECHNOLOGY PY:2014
TC:0 AU: Kim, Jieun;Choi, Byung-Hyun;Kang, Misook;
10:568:7 Direct synthesis of nano/micro co-porous Ni/NiO composite powders using EDA and mild heat treatment
DOI:10.1016/j.powtec.2013.09.008 JN:POWDER TECHNOLOGY PY:2013
TC:1 AU: Kim, Jieun;Choi, Byung-Hyun;Kang, Misook;
10:568:8 Effect of the deposition parameters on the structural and magnetic properties of pulsed laser ablated NiO thin films
DOI:10.1016/j.tsf.2012.12.020 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Verma, Vikram;Katiyar, Monica;
10:569:1 Cu and Co codoping effects on room-temperature ferromagnetism of (Co,Cu):ZnO dilute magnetic semiconductors
DOI:10.1063/1.3583667 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Hu, Fengchun;Liu, Qinghua;Sun, Zhihu;Yao, Tao;Pan, Zhiyun;Li, Yuanyuan;He, Jingfu;He, Bo;Xie, Zhi;Yan, Wensheng;Wei, Shiqiang;
10:569:2 Morphology, Optical, and Magnetic Properties of Zn1-xCoxO Nanorods Grown via a Wet Chemical Route
DOI:10.1111/j.1551-2916.2010.03922.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:9 AU: Kartawidjaja, Fransiska Cecilia;Lim, Zi Yi;Ng, Serene Lay Geok;Zhang, Yu;Wang, John;
10:569:3 Structural, Magnetic Properties, and Hall Carrier Concentrations of (Co,Cu):ZnO Thin Films-The Role of Cu Ions and Annealing in Hydrogen
DOI:10.1111/j.1551-2916.2012.05188.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:1 AU: Wang, Hao;Wang, Hanbin;He, Qiong;Wang, Xina;Zhang, Jun;
10:569:4 Cu codoping control over magnetic precipitate formation in ZnCoO nanowires
DOI:10.1063/1.4904987 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Granville, S.;Matei, E.;Enculescu, I.;Toimil-Molares, Maria Eugenia;
10:569:5 Structural, optical, and magnetic properties of (Co, Cu)-codoped ZnO films with different Co concentrations
DOI:10.1063/1.4867399 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:2 AU: Xu, M.;Yuan, H.;You, B.;Zhou, P. F.;Dong, C. J.;Duan, M. Y.;
10:569:6 Nanopores in track-etched polymer membranes characterized by small-angle x-ray scattering
DOI:10.1088/0957-4484/21/15/155702 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Cornelius, T. W.;Schiedt, B.;Severin, D.;Pepy, G.;Toulemonde, M.;Apel, P. Yu;Boesecke, P.;Trautmann, C.;
10:569:7 Intrinsic room temperature ferromagnetism in Zn0.92Co0.08O thin films prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2011.01.090 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Wang, Hanbin;He, Qiong;Wang, Hao;Wang, Xina;Zhang, Jun;Jiang, Yong;Li, Quan;
10:569:8 Tailored nanochannels of nearly cylindrical geometry analysed by small angle X-ray scattering
DOI:10.1007/s00339-013-8167-4 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:3 AU: Kuttich, Bjorn;Engel, Martin;Trautmann, Christina;Stuehn, Bernd;
10:570:1 Synthesis of hollow carbonyl iron microspheres via pitting corrosion method and their microwave absorption properties
DOI:10.1016/j.apsusc.2013.01.044 JN:APPLIED SURFACE SCIENCE PY:2013
TC:8 AU: Yin, Chunlei;Cao, Yuebin;Fan, Junmei;Bai, Liuyang;Ding, Fei;Yuan, Fangli;
10:570:2 Construction of Hollow and Mesoporous ZnO Microsphere: A Facile Synthesis and Sensing Property
DOI:10.1021/am3012966 JN:ACS APPLIED MATERIALS & INTERFACES PY:2012
TC:28 AU: Rao, Jun;Yu, Ang;Shao, Changlin;Zhou, Xingfu;
10:570:3 Cu2O template-assisted synthesis of porous In2O3 hollow spheres with fast response towards acetone
DOI:10.1016/j.matlet.2014.03.045 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Han, Dan;Song, Peng;Zhang, Huihui;Yang, Zhongxi;Wang, Qi;
10:570:4 Conductive and magnetic glass microsphere/cobalt composites prepared via an electroless plating route
DOI:10.1016/j.matlet.2013.08.127 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Zhou, Ruihua;Chen, Huiyu;Liu, Guilin;Zhao, Guizhe;Liu, Yaqing;
10:570:5 Microwave absorption performance of magnetic Fe-Ni-P nanoparticles electrolessly plated on hollow glass microspheres
DOI:10.1016/j.matchemphys.2012.02.055 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:8 AU: Zhou, Shaofeng;Zhang, Qiaoxin;Liu, Hao;Gong, Xuan;Huang, Jin;
10:570:6 Fabrication of metallic ions doped monodispersed porous In2O3 nanospheres
DOI:10.1016/j.matlet.2013.07.094 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Yang, Hongxiao;Wang, Shuping;Yang, Yanzhao;
10:570:7 Facile synthesis and characterization of glass/cobalt core/shell composite spheres with tunable shell morphologies
DOI:10.1016/j.apsusc.2009.09.031 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: An, Zhen-guo;Zhang, Jing-jie;Pan, Shun-long;
10:570:8 Dielectric properties of carbon black and carbonyl iron filled epoxy-silicone resin coating
DOI:10.1007/s10853-009-4173-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:10 AU: Qing, Yuchang;Zhou, Wancheng;Jia, Shu;Luo, Fa;Zhu, Dongmei;
10:571:1 Orbital pathways for Mn2+-carrier sp-d exchange in diluted magnetic semiconductor quantum dots
DOI:10.1103/PhysRevB.84.195324 JN:PHYSICAL REVIEW B PY:2011
TC:11 AU: Beaulac, Remi;Feng, Yong;May, Joseph W.;Badaeva, Ekaterina;Gamelin, Daniel R.;Li, Xiaosong;
10:571:2 Ferromagnetic excited-state Mn2+ dimers in Zn1-xMnxSe quantum dots observed by time-resolved magnetophotoluminescence
DOI:10.1103/PhysRevB.89.115312 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Bradshaw, Liam R.;May, Joseph W.;Dempsey, Jillian L.;Li, Xiaosong;Gamelin, Daniel R.;
10:571:3 Two-center formulation of Mn2+-electron s-d exchange coupling in bulk and quantum-confined diluted magnetic semiconductors
DOI:10.1103/PhysRevB.82.224401 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Beaulac, Remi;Gamelin, Daniel R.;
10:571:4 Density functional calculations of hole induced long ranged ferromagnetic ordering in Mn doped Cd28Se28 nanocluster
DOI:10.1063/1.3299016 JN:APPLIED PHYSICS LETTERS PY:2010
TC:11 AU: Ghosh, S.;Sanyal, B.;Das, G. P.;
10:571:5 Structure and magnetic properties of (CdSe)(9) doped with Mn atoms
DOI:10.1016/j.commatsci.2013.11.015 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2014
TC:2 AU: Gutsev, L. G.;Dalal, N. S.;Gutsev, G. L.;
10:572:1 The super hydrophobicity of ZnO nanorods fabricated by electrochemical deposition method
DOI:10.1016/j.apsusc.2011.02.083 JN:APPLIED SURFACE SCIENCE PY:2011
TC:18 AU: He, Geping;Wang, Kaige;
10:572:2 Water repellent ZnO nanowire arrays synthesized by simple solvothermal technique
DOI:10.1016/j.matlet.2009.11.047 JN:MATERIALS LETTERS PY:2010
TC:17 AU: Sarkar, S.;Patra, S.;Bera, S. K.;Paul, G. K.;Ghosh, R.;
10:572:3 Effect of heating rate on morphology and structure of CoFe2O4 nanofibers
DOI:10.1016/j.matlet.2011.06.102 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Pan, Weiwei;Ma, Zhi;Liu, Jinhong;Liu, Qingfang;Wang, Jianbo;
10:572:4 The heterostructured AAO/CeO2 nanosystem fabricated by electrodeposition for charge storage and hydrophobicity
DOI:10.1016/j.mseb.2013.07.004 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:0 AU: He, Geping;Fan, Huiqing;Wang, Kaige;Yin, Hongfeng;Wu, Junjun;
10:572:5 Microwave absorption properties of the Ni nanofibers fabricated by electrospinning
DOI:10.1007/s00339-013-7584-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:6 AU: Pan, W. W.;Liu, Q. F.;Han, R.;Chi, X.;Wang, J. B.;
10:572:6 Preparation and characterization of a new white magnetic paper
DOI:10.1016/j.matlet.2014.08.057 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Gao, Dangni;Ma, Jianzhong;Li, ZHijian;Liu, Junli;
10:572:7 Improved magnetic properties of SrFe12O19/FeCo core-shell nanofibers by hard/soft magnetic exchange-coupling effect
DOI:10.1016/j.matlet.2014.01.022 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Dong, Juan;Zhang, Yi;Zhang, Xinlei;Liu, Qingfang;Wang, Jianbo;
10:573:1 c-plane ZnO on a-plane sapphire: Inclusion of (1101) domains
DOI:10.1010/j.jcrysgro.2015.03.020 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Madel, M.;Neusser, G.;Simon, U.;Mizaikoff, B.;Thonke, K.;
10:573:2 Modification of optical properties in ZnO particles by surface deposition and anchoring of NiO nanoparticles
DOI:10.1016/j.jallcom.2010.11.149 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:13 AU: Rubio-Marcos, F.;Manzano, C. V.;Reinosa, J. J.;Lorite, I.;Romero, J. J.;Fernandez, J. F.;Martin-Gonzalez, M. S.;
10:573:3 Correlation between intrinsic defect and carrier transport in ZnO thin films by confocal Raman spectroscopy
DOI:10.1016/j.matlet.2013.07.040 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Lorite, Israel;Diaz-Carrasco, Pilar;Gabas, Mercedes;Francisco Fernandez, Jose;Luis Costa-Kraemer, Jose;
10:573:4 Low cost zinc oxide for memristors with high On-Off ratios
DOI:10.1016/j.matlet.2014.05.071 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Paul, Shamistha;Harris, Paul G.;Pal, Chandana;Sharma, Ashwani K.;Ray, Asim K.;
10:573:5 Doping, carriers and intergrain fields in ZnO films: An impedance and confocal Raman spectroscopy study
DOI:10.1016/j.tsf.2013.09.077 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Lorite, Israel;Villaseca, Laura;Diaz-Carrasco, Pilar;Gabas, Mercedes;Luis Costa-Kraemer, Jose;
10:573:6 Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
DOI:10.1063/1.4709430 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Xie, Yong;Madel, Manfred;Zoberbier, Thilo;Reiser, Anton;Jie, Wanqi;Neuschl, Benjamin;Biskupek, Johannes;Kaiser, Ute;Feneberg, Martin;Thonke, Klaus;
10:573:7 How to prevent twin formation in epitaxial ZnO thin films grown on c-plane sapphire
DOI:10.1016/j.tsf.2009.12.047 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Steplecaru, C. S.;Martin-Gonzalez, M. S.;Fernandez, J. F.;Costa-Kraemer, J. L.;
10:573:8 Electrostatic charge dependence on surface hydroxylation for different Al2O3 powders
DOI:10.1016/j.ceramint.2011.09.024 JN:CERAMICS INTERNATIONAL PY:2012
TC:5 AU: Lorite, Israel;Martin-Gonzalez, M. S.;Romero, J. J.;Garcia, M. A.;Fierro, Jose L. G.;Fernandez, Jose F.;
10:573:9 Study of the nanoparticle/microparticle powder systems by dry dispersion
DOI:10.1016/j.ceramint.2012.08.005 JN:CERAMICS INTERNATIONAL PY:2013
TC:0 AU: Lorite, I.;Romero, J. J.;Fernandez, J. F.;
10:574:1 Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method
DOI:10.1016/j.apsusc.2010.11.055 JN:APPLIED SURFACE SCIENCE PY:2011
TC:12 AU: Zhong, Kun;Xu, Jie;Su, Jing;Chen, Yu Lin;
10:574:2 Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts
DOI:10.1016/j.jcis.2011.03.036 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:8 AU: Meng, Xiuqing;Liu, Chaoren;Wu, Fengmin;Li, Jingbo;
10:574:3 Enhancement of up-conversion emissions in ZnO: Er3+-Yb3+ after Gd2O3 surface modification
DOI:10.1016/j.apsusc.2013.02.091 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Han, Cong;Du, Yuanbao;Meng, Xiuqing;Wu, Fengmin;Fang, Yunzhang;
10:574:4 Preparation, microstructure and photoelectrical properties of Tantalum-doped zinc oxide transparent conducting films
DOI:10.1016/j.jallcom.2014.03.031 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Cheng, Yunlang;Cao, Ling;He, Gang;Yao, Guang;Song, Xueping;Sun, Zhaoqi;
10:574:5 Er3+-Yb3+ co-doped TiO2 nanoparticles embedded in amorphous matrix with strong up-conversion emissions
DOI:10.1016/j.jallcom.2012.04.043 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:2 AU: Meng, Xiuqing;Han, Cong;Wu, Fengmin;Li, Jingbo;
10:574:6 Thermodynamic assessment of the Si-Ta system
DOI:10.1016/j.jallcom.2012.09.148 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:5 AU: Drouelle, I.;Servant, C.;
10:574:7 Synthesis of Er-doped ZnO nanoparticle/organic hybrid from metal-organics
DOI:10.1007/s10853-012-6389-z JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:2 AU: Kachi, Masahiro;Sakamoto, Wataru;Ichida, Masao;Wada, Tomoo;Ando, Hiroaki;Yogo, Toshinobu;
10:574:8 Sonochemical Synthesis of Er3+-Doped ZnO Nanospheres with Enhanced Upconversion Photoluminescence
DOI:10.1155/2012/317857 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:0 AU: Geng, Jun;Song, Guang-Hui;Zhu, Jun-Jie;
10:574:9 Up-conversion effect of Er- and Yb-doped ZnO thin films
DOI:10.1016/j.tsf.2014.03.078 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Llusca, M.;Lopez-Vidrier, J.;Antony, A.;Hernandez, S.;Garrido, B.;Bertomeu, J.;
10:574:10 The mixed intermetallic silicide Nb5-xTaxSi3 ( 0 <= x <= 5). Crystal and electronic structure
DOI:10.1016/j.jallcom.2013.09.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Tillard, Monique;
10:575:1 A simple preparation of highly photoactive Fe(III)-doped titania nanocrystals by annealing-free approach
DOI:10.1016/j.jallcom.2013.07.192 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:2 AU: Vinogradov, A. V.;Vinogradov, V. V.;Agafonov, A. V.;
10:575:2 Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer
DOI:10.1063/1.3521286 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Lee, Y. J.;de Jong, M. P.;van der Wiel, W. G.;Kim, Y.;Brock, J. D.;
10:575:3 Tuning the Kondo effect in thin Au films by depositing a thin layer of Au on molecular spin-dopants
DOI:10.1088/0957-4484/24/37/375204 JN:NANOTECHNOLOGY PY:2013
TC:0 AU: Atac, D.;Gang, T.;Yilmaz, M. D.;Bose, S. K.;Lenferink, A. T. M.;Otto, C.;de Jong, M. P.;Huskens, J.;van der Wiel, W. G.;
10:575:4 Low-temperature sol-gel synthesis photochromic Cu/TiO2 films
DOI:10.1016/j.jallcom.2011.11.004 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:9 AU: Vinogradov, A. V.;Agafonov, A. V.;Vinogradov, V. V.;
10:575:5 Electronic structure of Co2+ ions in anatase Co:TiO2 in relation to heterogeneity and structural defects
DOI:10.1103/PhysRevB.83.134404 JN:PHYSICAL REVIEW B PY:2011
TC:3 AU: Lee, Y. J.;de Jong, M. P.;van der Wiel, W. G.;
10:575:6 Magnetism and heterogeneity of Co in anatase Co:TiO2 magnetic semiconductor
DOI:10.1063/1.3327805 JN:APPLIED PHYSICS LETTERS PY:2010
TC:8 AU: Lee, Y. J.;de Jong, M. P.;Jansen, R.;
10:575:7 Low-temperature sol-gel synthesis of crystalline CoTiO3 coatings without annealing
DOI:10.1016/j.jallcom.2012.06.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:5 AU: Vinogradov, A. V.;Vinogradov, V. V.;Gerasimova, T. V.;Agafonov, A. V.;
10:575:8 Low-temperature sol-gel synthesis of nanosized pseudobrookite crystals without heat treatment
DOI:10.1016/j.jallcom.2012.04.066 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:7 AU: Vinogradov, A. V.;Vinogradov, V. V.;Gerasimova, T. V.;Agafonov, A. V.;
10:575:9 Longitudinal and transverse magnetization components in thin films: A resonant magnetic reflectivity investigation using circularly polarized soft x-rays
DOI:10.1063/1.3292207 JN:APPLIED PHYSICS LETTERS PY:2010
TC:4 AU: Lee, J. -S.;Vescovo, E.;Arena, D. A.;Kao, C. -C.;Beaujour, J. -M.;Kent, A. D.;Jang, H.;Park, J. -H.;Kim, J. -Y.;
10:576:1 Formation of Three-Dimensional Ordered Hierarchically Porous Metal Oxides via a Hybridized Epoxide Assisted/Colloidal Crystal Templating Approach
DOI:10.1021/am401522n JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Davis, Marauo;Ramirez, Donald A.;Hope-Weeks, Louisa J.;
10:576:2 Enhanced electrical conductivity in mesoporous 3D indium-tin oxide materials
DOI:10.1039/c2jm34744j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:5 AU: Davis, Marauo;Zhang, Kun;Wang, Shiren;Hope-Weeks, Louisa J.;
10:576:3 Enhanced photocatalytic performance of Fe-doped SnO2 nanoarchitectures under UV irradiation: synthesis and activity
DOI:10.1007/s10853-013-7440-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Davis, Marauo;Hung-Low, Fernando;Hikal, Walid M.;Hope-Weeks, Louisa J.;
10:576:4 Synthesis and enhanced photocatalytic activity of tin oxide nanoparticles coated on multi-walled carbon nanotube
DOI:10.1016/j.materresbull.2011.05.014 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:13 AU: Wang, Ning;Xu, Jiaoxing;Guan, Lunhui;
10:576:5 Influence of solvent on porosity and microstructure of an yttrium based aerogel
DOI:10.1039/c0jm03178j JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Brown, Preston D.;Gill, Simerjeet K.;Hope-Weeks, Louisa J.;
10:576:6 Facile synthesis of zinc aluminate nanostructures through an epoxide driven sol-gel route
DOI:10.1016/j.matlet.2011.12.098 JN:MATERIALS LETTERS PY:2012
TC:9 AU: Davis, Marauo;Guemeci, Cenk;Alsup, Ryan;Korzeniewski, Carol;Hope-Weeks, Louisa J.;
10:576:7 Homogeneous SnO2 core-shell microspheres: Microwave-assisted hydrothermal synthesis, morphology control and photocatalytic properties
DOI:10.1016/j.materresbull.2013.10.036 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:3 AU: Wang, Xin;Fan, Huiqing;Ren, Pengrong;Li, Mengmeng;
10:576:8 Thermal tuning of advanced Cu sol-gels for mixed oxidation state Cu/CuxOy materials
DOI:10.1039/c3ta11957b JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:2 AU: Baghi, Roya;Peterson, Geneva R.;Hope-Weeks, Louisa J.;
10:577:1 Investigation of photocatalytic activity and UV-shielding properties for silica coated titania nanoparticles by solvothermal coating
DOI:10.1016/j.jallcom.2010.08.031 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:12 AU: El-Toni, Ahmed Mohamed;Yin, Shu;Sato, Tsugio;Ghannam, Talal;Al-Hoshan, Mansour;Al-Salhi, Mohamed;
10:577:2 Catalyst-free combined synthesis of Zn/ZnO core/shell hollow microspheres and metallic Zn microparticles by thermal evaporation and condensation route
DOI:10.1016/j.jallcom.2010.07.039 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:9 AU: Khan, Waheed S.;Cao, Chuanbao;Nabi, Ghulam;Yao, Ruimin;Bhatti, Sajjad H.;
10:577:3 The effect of solvents on ZnS nanostructures synthesized by biomolecule-assisted solvothermal method
DOI:10.1016/j.matlet.2011.07.079 JN:MATERIALS LETTERS PY:2011
TC:6 AU: Kaowphong, Sulawan;Thongtem, Titipun;Yayapao, Oranuch;Thongtem, Somchai;
10:577:4 Synthesis of novel ZnS/ZnAl2S4 core/shell nanocomposites using a facile solvothermal route
DOI:10.1016/j.jallcom.2010.02.134 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Thongtem, Titipun;Pilapong, Chalermchai;Thongtem, Somchai;
10:577:5 Formation of zinc oxide films using submicron zinc particle dispersions
DOI:10.1116/1.4731255 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2012
TC:0 AU: Rajachidambaram, Meena S.;Varga, Tamas;Kovarik, Libor;Sanghavi, Rahul;Shutthanandan, Vaithiyalingam;Thevuthasan, Suntharampillai;Han, Seung-Yeol;Chang, Chih-Hung;Herman, Gregory S.;
10:577:6 Silica coated titania nanotubes for drug delivery system
DOI:10.1016/j.matlet.2010.05.002 JN:MATERIALS LETTERS PY:2010
TC:8 AU: Cho, Seong Je;Kim, Hyun Ju;Lee, Jae Ho;Choi, Hyun Woo;Kim, Ho Gi;Chung, Hyung Min;Do, Jeong Tae;
10:577:7 Photodegradation characteristics of sol-gel-derived glass-coated Eu-complex fabricated by solvothermal process using several silane alkoxides and solvents
DOI:10.1016/j.optmat.2012.06.001 JN:OPTICAL MATERIALS PY:2012
TC:2 AU: Fukuda, Takeshi;Kato, Sayaka;Akiyama, Shinnosuke;Honda, Zentaro;Kamata, Norihiko;
10:577:8 Investigation of photocatalytic activity and UV-shielding properties for silica coated titania nanoparticles by solvothermal coating (vol 508, pg L1, 2010)
DOI:10.1016/j.jallcom.2013.01.001 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:0 AU: El-Toni, Ahmed Mohamed;Yin, Shu;Sato, Tsugio;Ghannam, Talal;Al-Hoshan, Mansour;Al-Salhi, Mohamed;
10:578:1 Experimental and theoretical investigation of ligand effects on the synthesis of ZnO nanoparticles
DOI:10.1007/s11051-012-1012-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:8 AU: Chang, Jin;Waclawik, Eric R.;
10:578:2 Novel hierarchical microparticles super-assembled from nanoparticles with the induction of casein micelles
DOI:10.1007/s11051-013-1870-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:1 AU: Xiong, Xiaopeng;Duan, Jiangjiang;Wang, Yong;Yu, Zhaoju;
10:578:3 Surfactant-Assisted Synthesis and Characterization of Stable Silver Bromide Nanoparticles in Aqueous Media
DOI:10.1021/la300615b JN:LANGMUIR PY:2012
TC:10 AU: Chakraborty, Moumita;Hsiao, Fang-Wei;Naskar, Bappaditya;Chang, Chien-Hsiang;Panda, Amiya Kumar;
10:578:4 Effects of successive additions of two capping ligands on the structural properties of PbO nanoparticles
DOI:10.1007/s11051-013-2070-y JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:0 AU: Bangi, Uzma K. H.;Han, Wooje;Yoo, Byungwook;Park, Hyung-Ho;
10:578:5 Formation of One-Dimensional Capped ZnO Nanoparticle Assemblies at the Air/Water Interface
DOI:10.1021/la102152e JN:LANGMUIR PY:2010
TC:4 AU: Shortell, Matthew P.;Liu, Hong-Wei;Zhu, Huaiyong;Jaatinen, Esa A.;Waclawik, Eric R.;
10:578:6 Interaction of O-2, H2O, N-2, and O-3 with stoichiometric and reduced ZnO(10(1)over-bar0) surface
DOI:10.1103/PhysRevB.82.155326 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Xu, H.;Zhang, R. Q.;Tong, S. Y.;
10:578:7 Novel ZnO-binding peptides obtained by the screening of a phage display peptide library
DOI:10.1007/s11051-012-1218-5 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Golec, Piotr;Karczewska-Golec, Joanna;Los, Marcin;Wegrzyn, Grzegorz;
10:578:8 Screening of peptides with a high affinity for ZnO using spot-synthesized peptide arrays and computational analysis
DOI:10.1016/j.actbio.2009.12.025 JN:ACTA BIOMATERIALIA PY:2010
TC:6 AU: Okochi, Mina;Ogawa, Masafumi;Kaga, Chiaki;Sugita, Tomoya;Tomita, Yasuyuki;Kato, Ryuji;Honda, Hiroyuki;
10:578:9 Surfactant-Assisted Synthesis and Characterization of Stable Silver Bromide Nanoparticles in Aqueous Media (vol 28, pg 7282, 2012)
DOI:10.1021/la3021673 JN:LANGMUIR PY:2012
TC:0 AU: Chakraborty, Moumita;Hsiao, Fang-Wei;Naskar, Bappaditya;Chang, Chien-Hsiang;Panda, Amiya Kumar;
10:578:10 Switching behavior of thermochromic copper and silver tetraiodomercurate embedded in silica hybrid materials
DOI:10.1016/j.optmat.2013.07.027 JN:OPTICAL MATERIALS PY:2013
TC:2 AU: Raditoiu, Valentin;Radovici, Constantin;Raditoiu, Alina;Nicolae, Cristian Andi;Culita, Daniela Cristina;Fierascu, Radu Claudiu;Amariutei, Viorica;Wagner, Luminita Eugenia;
10:579:1 Experimental and first-principles studies of structural and optical properties of rare earth (RE = La, Er, Nd) doped ZnO
DOI:10.1016/j.jallcom.2014.08.019 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:0 AU: Li Honglin;Lv Yingbo;Li Jinzhu;Yu Ke;
10:579:2 Preparation, photocatalytic properties and mechanism of Fe or N-doped Ag/ZnO nanocomposites
DOI:10.1016/j.ceramint.2014.01.153 JN:CERAMICS INTERNATIONAL PY:2014
TC:5 AU: Meng, Alan;Li, Xiujuan;Wang, Xianlin;Li, Zhenjiang;
10:579:3 Enhanced UV absorbance and photoluminescence properties of ultrasound assisted synthesized gold doped ZnO nanorods
DOI:10.1016/j.optmat.2014.03.041 JN:OPTICAL MATERIALS PY:2014
TC:8 AU: Sahu, Dojalisa;Panda, N. R.;Acharya, B. S.;Panda, A. K.;
10:579:4 Encapsulation of ZnO particles by metal fluorides: Towards an application as transparent insulating coatings for windows
DOI:10.1016/j.optmat.2012.10.056 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Trenque, Isabelle;Mornet, Stephane;Duguet, Etienne;Majimel, Jerome;Bruell, Annelise;Teinz, Katharina;Kemnitz, Erhard;Gaudon, Manuel;
10:579:5 Enhancement of 1536 nm emission of Er doped ZnO nanopowder by Ag doping
DOI:10.1016/j.optmat.2014.03.012 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Zamiri, Reza;Poor, Hamid-Reza Bahari;Rebelo, Avito;Umar, Akrajas Ali;Ferreira, J. M. F.;
10:579:6 About the key factors driving the resistivity of AuOx thin films grown by reactive magnetron sputtering
DOI:10.1016/j.apsusc.2014.01.026 JN:APPLIED SURFACE SCIENCE PY:2014
TC:4 AU: Dolique, V.;Thomann, A-L.;Millon, E.;Petit, A.;Brault, P.;
10:580:1 Electron-hole recombination on ZnO(0001) single-crystal surface studied by time-resolved soft X-ray photoelectron spectroscopy
DOI:10.1063/1.4897934 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Yukawa, R.;Yamamoto, S.;Ozawa, K.;Emori, M.;Ogawa, M.;Yamamoto, Sh;Fujikawa, K.;Hobara, R.;Kitagawa, S.;Daimon, H.;Sakama, H.;Matsuda, I.;
10:580:2 Comparison of the surface electronic structures of H-adsorbed ZnO surfaces: An angle-resolved photoelectron spectroscopy study
DOI:10.1103/PhysRevB.83.125406 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: Ozawa, Kenichi;Mase, Kazuhiko;
10:580:3 Metallization of ZnO(10(1)over-bar0) by adsorption of hydrogen, methanol, and water: Angle-resolved photoelectron spectroscopy
DOI:10.1103/PhysRevB.81.205322 JN:PHYSICAL REVIEW B PY:2010
TC:14 AU: Ozawa, Kenichi;Mase, Kazuhiko;
10:580:4 Hydrogen induced metallization of ZnO (1(1)over-bar00) surface: Ab initio study
DOI:10.1016/j.tsf.2013.11.021 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Usseinov, A. B.;Kotomin, E. A.;Akilbekov, A. T.;Zhukovskii, Yu F.;Purans, J.;
10:580:5 Oscillatory relaxation of surface photovoltage on a silicon surface
DOI:10.1103/PhysRevB.87.235308 JN:PHYSICAL REVIEW B PY:2013
TC:6 AU: Ogawa, M.;Yamamoto, S.;Yukawa, R.;Hobara, R.;Lin, C. -H.;Liu, R. -Y.;Tang, S. -J.;Matsuda, I.;
10:580:6 Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy
DOI:10.1103/PhysRevB.88.165313 JN:PHYSICAL REVIEW B PY:2013
TC:3 AU: Ogawa, M.;Yamamoto, S.;Fujikawa, K.;Hobara, R.;Yukawa, R.;Yamamoto, Sh.;Kitagawa, S.;Pierucci, D.;Silly, M. G.;Lin, C-H;Liu, R-Y;Daimon, H.;Sirotti, F.;Tang, S-J;Matsuda, I.;
10:580:7 Oscillatory relaxation of surface photovoltage on a silicon surface (vol 87, 235308, 2013)
DOI:10.1103/PhysRevB.89.119903 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Ogawa, M.;Yamamoto, S.;Yukawa, R.;Hobara, R.;Lin, C. -H.;Liu, R. -Y.;Tang, S. -J.;Matsuda, I.;
10:580:8 Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy (vol 88, 165313, 2013)
DOI:10.1103/PhysRevB.89.119904 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Ogawa, M.;Yamamoto, S.;Fujikawa, K.;Hobara, R.;Yukawa, R.;Yamamoto, Sh;Kitagawa, S.;Pierucci, D.;Silly, M. G.;Lin, C. -H.;Liu, R. -Y.;Daimon, H.;Sirotti, F.;Tang, S. -J.;Matsuda, I.;
10:580:9 Theoretical calculations of hydrogen adsorption by SnO2 (110) surface: Effect of doping and calcination
DOI:10.1063/1.3399565 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Inerbaev, Talgat M.;Kawazoe, Yoshiyuki;Seal, Sudipta;
10:581:1 Facile and mild preparation of fluorescent ZnO nanosheets and their bioimaging applications
DOI:10.1016/j.apsusc.2011.03.053 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Jiang, Hui;Wang, Huangping;Wang, Xuemei;
10:581:2 The effects of postdeposition annealing conditions on structure and created defects in Zn0.90Co0.10O thin films deposited on Si(100) substrate
DOI:10.1557/jmr.2012.422 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:0 AU: Can, Musa Mutlu;Firat, Tezer;Shah, S. Ismat;Bakan, Feray;Oral, Ahmet;
10:581:3 Highly water resistant surface coating by fluoride on long persistent Sr4Al14O25:Eu2+/Dy3+ phosphor
DOI:10.1016/j.apsusc.2009.10.065 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Luitel, Hom Nath;Watari, Takanori;Torikai, Toshio;Yada, Mitsunori;Chand, Rumi;Xu, Chao-Nan;Nanoka, Kazuhiro;
10:581:4 Encapsulating MAl2O4:Eu2+, Dy3+ (M = Sr, Ca, Ba) phosphors with triethanolamine to enhance water resistance
DOI:10.1016/j.apsusc.2011.10.098 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Ji, Ping Ting;Chen, Xiang Ying;Wu, Ye Qin;
10:581:5 Rapid combustion method for surface modification of strontium aluminate phosphors with high water resistance
DOI:10.1016/j.apsusc.2012.03.105 JN:APPLIED SURFACE SCIENCE PY:2012
TC:2 AU: Yang, Qu;Liu, Yingliang;Yu, Caixia;Zhu, Guoxian;Sha, Lei;Yang, Yunhua;Zheng, Mingtao;Lei, Bingfu;
10:581:6 The effects of post-annealing on the performance of ZnO thin film transistors
DOI:10.1016/j.tsf.2011.05.048 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Bang, Seokhwan;Lee, Seungjun;Park, Joohyun;Park, Soyeon;Ko, Youngbin;Choi, Changhwan;Chang, Hojung;Park, Hyungho;Jeon, Hyeongtag;
10:581:7 Dominancy of antiferromagnetism in Zn1-xCoxO diluted magnetic semiconductors
DOI:10.1007/s10853-010-5008-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:7 AU: Can, Musa Mutlu;Firat, Tezer;Ozcan, Sadan;
10:581:8 Surface modification of MAl2O4:Eu2+,Dy3+ (M = Sr, Ca, Ba) phosphors to enhance water resistance by combustion method
DOI:10.1016/j.apsusc.2013.05.125 JN:APPLIED SURFACE SCIENCE PY:2013
TC:0 AU: Deng, Suqing;Xue, Zhiping;Yang, Qu;Liu, Yingliang;Lei, Bingfu;Xiao, Yong;Zheng, Mingtao;
10:581:9 Properties of Green SrAl2O4 Phosphor in LDPE and PMMA Polymers
DOI:10.1002/app.31405 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:4 AU: Bem, D. B.;Swart, H. C.;Luyt, A. S.;Coetzee, E.;Dejene, F. B.;
10:582:1 A facile route to meso-porous cobalt oxide with caved polyhedron-like morphology
DOI:10.1016/j.materresbull.2012.11.049 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:4 AU: Xu, Jing;Ren, XueYan;Xu, JunWei;Zhang, Wei;
10:582:2 Highly sensitive and selective ethanol sensor based on micron-sized zinc oxide porous-shell hollow spheres
DOI:10.1016/j.materresbull.2012.06.007 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:7 AU: Wang, Ling Li;Wang, Hai Yan;Wang, Yong Qiang;Li, Xin Jian;
10:582:3 Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H2S cataluminescence sensing materials
DOI:10.1016/j.materresbull.2012.06.002 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:8 AU: Cai, Pingyang;Bai, Wei;Zhang, Lichun;Song, Hongjie;Su, Yingying;Lv, Yi;
10:582:4 Control of growth orientation and shape for epitaxially grown In2O3 nanowires on a-plane sapphire
DOI:10.1016/j.materresbull.2009.08.011 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:7 AU: Chen, Ching-Jong;Chern, Ming-Yau;Wu, Chien-Ting;Chen, Cheng-Hsuan;
10:582:5 Fabrication of hollow mesoporous NiO hexagonal microspheres via hydrothermal process in ionic liquid
DOI:10.1016/j.materresbull.2011.08.026 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:5 AU: Zhao, Jinbo;Wu, Lili;Zou, Ke;
10:582:6 Synthesis of uniformly porous NiO/ZrO2 particles
DOI:10.1016/j.materresbull.2011.01.019 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:12 AU: Balgis, Ratna;Iskandar, Ferry;Ogi, Takashi;Purwanto, Agus;Okuyama, Kikuo;
10:582:7 Shape-controlled synthesis and properties of dandelion-like manganese sulfide hollow spheres
DOI:10.1016/j.materresbull.2012.06.005 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:6 AU: Ma, Wei;Chen, Gen;Zhang, Dan;Zhu, Jianyu;Qiu, Guanzhou;Liu, Xiaohe;
10:582:8 Nitrogen-doped hollow carbon spheres with enhanced electrochemical capacitive properties
DOI:10.1016/j.materresbull.2012.03.047 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:9 AU: Liao, Yi;Gao, Lei;Zhang, Xiaohua;Chen, Jinhua;
10:582:9 Formation of zirconium and nickel oxide nanoparticles via oxidation of quenched melted Ni-Zr alloys
DOI:10.1016/j.ceramint.2012.05.069 JN:CERAMICS INTERNATIONAL PY:2012
TC:0 AU: Saidi, D.;Zaid, B.;Boutarfaia, S.;Hadji, S.;Souami, N.;Ahmed, A. Si;Biberian, J. P.;
10:583:1 Ferromagnetism in SnO2-based multilayers: Clustering of defects induced by doping
DOI:10.1103/PhysRevB.81.064419 JN:PHYSICAL REVIEW B PY:2010
TC:12 AU: Espinosa, A.;Garcia-Hernandez, M.;Menendez, N.;Prieto, C.;de Andres, A.;
10:583:2 Positron Annihilation Lifetime Studies of Nb-Doped TiO2, SnO2, and ZrO2
DOI:10.1111/j.1551-2916.2012.05157.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:6 AU: Guagliardo, Paul R.;Vance, Eric R.;Zhang, Zhaoming;Davis, Joel;Williams, Jim F.;Samarin, Sergey N.;
10:583:3 Spin-polarized transport in a full magnetic pn tunnel junction
DOI:10.1063/1.3586770 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Comesana, E.;Aldegunde, M.;Garcia-Loureiro, A. J.;
10:583:4 Fabrication and characterization of wustite-based epitaxial thin films: p-type wide-gap oxide semiconductors composed of abundant elements
DOI:10.1063/1.4896316 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Seki, Munetoshi;Takahashi, Masanao;Adachi, Masaki;Yamahara, Hiroyasu;Tabata, Hitoshi;
10:583:5 Highly spin-polarized current in Co-substituted Fe3O4 epitaxial thin films at room temperature
DOI:10.1063/1.4903215 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Takahashi, Masanao;Ohshima, Toshiyuki;Yamahara, Hiroyasu;Seki, Munetoshi;Tabata, Hitoshi;
10:583:6 Epitaxial thin films of p-type spinel ferrite grown by pulsed laser deposition
DOI:10.1063/1.3670045 JN:APPLIED PHYSICS LETTERS PY:2011
TC:3 AU: Seki, Munetoshi;Tabata, Hitoshi;Ohta, Hiromichi;Inaba, Katsuhiko;Kobayashi, Shintaro;
10:583:7 Magnetic and electric properties of Ru-substituted CoFe2O4 thin films fabricated by pulsed laser deposition
DOI:10.1063/1.4766410 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Iwamoto, Fujiyuki;Seki, Munetoshi;Tabata, Hitoshi;
10:583:8 Confinement effects on the low temperature magnetic structure of MnP nanocrystals
DOI:10.1063/1.3658393 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: de Andres, A.;Ramirez-Jimenez, R.;Garcia-Hernandez, M.;Lambert-Milot, S.;Masut, R. A.;
10:583:9 Positron Annihilation in Off-Stoichiometric and Ta-Doped Zn2TiO4
DOI:10.1111/jace.12454 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:1 AU: Guagliardo, Paul R.;Vance, Eric R.;Lumpkin, Gregory R.;Blackford, Mark G.;Sudarshan, Kathi;Davis, Joel;Samarin, Sergey;Williams, James F.;
10:583:10 MnP films and MnP nanocrystals embedded in GaP epilayers grown on GaP(001): Magnetic properties and local bonding structure
DOI:10.1063/1.3580270 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: de Andres, A.;Espinosa, A.;Prieto, C.;Garcia-Hernandez, M.;Ramirez-Jimenez, R.;Lambert-Milot, S.;Masut, R. A.;
10:584:1 Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods
DOI:10.1063/1.4801534 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Montenegro, D. N.;Hortelano, V.;Martinez, O.;Martinez-Tomas, M. C.;Sallet, V.;Munoz-Sanjose, V.;Jimenez, J.;
10:584:2 Morphology transitions in ZnO nanorods grown by MOCVD
DOI:10.1016/j.jcrysgro.2012.08.038 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Montenegro, D. N.;Souissi, A.;Martinez-Tomas, C.;Munoz-Sanjose, V.;Sallet, V.;
10:584:3 Structural and optical characterizations of nitrogen-doped ZnO nanowires grown by MOCVD
DOI:10.1016/j.matlet.2010.06.056 JN:MATERIALS LETTERS PY:2010
TC:15 AU: Marzouki, A.;Falyouni, F.;Haneche, N.;Lusson, A.;Galtier, P.;Rigutti, L.;Jacopin, G.;Tchernycheva, M.;Oueslati, M.;Sallet, V.;
10:584:4 A study on defect formation and magnetic properties of nitrogen-doped ZnO nanowires by the first principles
DOI:10.1016/j.jmmm.2012.05.010 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:2 AU: Shi, Li-Bin;Fei, Ying;
10:584:5 High resolution x-ray diffraction methodology for the structural analysis of one-dimensional nanostructures
DOI:10.1063/1.4730403 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Martinez-Tomas, M. C.;Montenegro, D. N.;Sallet, V.;Munoz-Sanjose, V.;
10:584:6 Thermal pretreatment of sapphire substrates prior to ZnO buffer layer growth
DOI:10.1116/1.4817825 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2013
TC:2 AU: Huang, Shimin;Gu, Shulin;Zhu, Shunming;Gu, Ran;Tang, Kun;Ye, Jiandong;Zhang, Rong;Shi, Yi;Zheng, Youdou;
10:584:7 Coulomb oscillations of indium-doped ZnO nanowire transistors in a magnetic field
DOI:10.1103/PhysRevB.82.195309 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Xu, Xiulai;Irvine, Andrew C.;Yang, Yang;Zhang, Xitian;Williams, David A.;
10:584:8 Elimination of rotation domains in ZnO thin films on c-plane Al2O3 substrates
DOI:10.1016/j.jcrysgro.2009.12.011 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Trautnitz, Tina;Sorgenfrei, Ralf;Fiederle, Michael;
10:584:9 Properties of Nitrogen Molecules in ZnO
DOI:10.1007/s11664-010-1456-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:3 AU: Nickel, N. H.;Gluba, M. A.;
10:585:1 Effects of Anionic Surfactants on the Water Permeability of a Model Stratum Corneum Lipid Membrane
DOI:10.1021/la403138a JN:LANGMUIR PY:2014
TC:1 AU: Lee, Sang-Wook;Tettey, Kwadwo E.;Yarovoy, Yury;Lee, Daeyeon;
10:585:2 Ceramides in the Skin Lipid Membranes: Length Matters
DOI:10.1021/la4037474 JN:LANGMUIR PY:2013
TC:11 AU: Skolova, Barbora;Janusova, Barbora;Zbytovska, Jarmila;Gooris, Gert;Bouwstra, Joke;Slepicka, Petr;Berka, Pavel;Roh, Jaroslav;Palat, Karel;Hrabalek, Alexandr;Vavrova, Katerina;
10:585:3 Model Membranes Prepared with Ceramide EOS, Cholesterol and Free Fatty Acids Form a Unique Lamellar Phase
DOI:10.1021/la9047038 JN:LANGMUIR PY:2010
TC:12 AU: Groen, Daniel;Gooris, Gert S.;Bouwstra, Joke A.;
10:585:4 Oleic Acid Disorders Stratum Corneum Lipids in Langmuir Monolayers
DOI:10.1021/la4002384 JN:LANGMUIR PY:2013
TC:8 AU: Mao, Guangru;VanWyck, Dina;Xiao, Xin;Correa, M. Catherine Mack;Gunn, Euen;Flach, Carol R.;Mendelsohn, Richard;Walters, Russel M.;
10:585:5 Effect of composition on water permeability of model stratum corneum lipid membranes
DOI:10.1039/c1sm06613g JN:SOFT MATTER PY:2012
TC:6 AU: Lee, Myung Han;Lim, Bomyi;Kim, Jin Woong;An, Eun Jung;Lee, Daeyeon;
10:585:6 Damage/Recovery by Additive on Lipid Membrane as a Mimicry of Human Stratum Corneum
DOI:10.1021/la903602v JN:LANGMUIR PY:2010
TC:4 AU: Zhu, Yan;Imae, Toyoko;Saiwaki, Takuya;Oka, Takashi;
10:585:7 Ceramide N-Acyl Chain Length: A Determinant of Bidimensional Transitions, Condensed Domain Morphology, and Interfacial Thickness
DOI:10.1021/la105011x JN:LANGMUIR PY:2011
TC:14 AU: Dupuy, Fernando;Laura Fanani, Maria;Maggio, Bruno;
10:585:8 Influence of Spacer of Gemini on the Interactions between Cationic Gemini Surfactant and Stearic Acid in Mixed Monolayers
DOI:10.1021/la1003287 JN:LANGMUIR PY:2010
TC:3 AU: Li, Rong;Chen, Qibin;Liu, Honglai;Hu, Ying;
10:585:9 Monounsaturated Fatty Acids Reduce the Barrier of Stratum Corneum Lipid Membranes by Enhancing the Formation of a Hexagonal Lateral Packing
DOI:10.1021/la500972w JN:LANGMUIR PY:2014
TC:4 AU: Mojumdar, Enamul H.;Helder, Richard W. J.;Gooris, Gert S.;Bouwstra, Joke A.;
10:585:10 The Role of the Trans Double Bond in Skin Barrier Sphingolipids: Permeability and Infrared Spectroscopic Study of Model Ceramide and Dihydroceramide Membranes
DOI:10.1021/la500622f JN:LANGMUIR PY:2014
TC:4 AU: Skolova, Barbora;Jandovska, Katerina;Pullmannova, Petra;Tesar, Ondrej;Roh, Jaroslav;Hrabalek, Alexandr;Vavrova, Katerina;
10:586:1 Permanent Polarity and Piezoelectricity of Electrospun alpha-Helical Poly(alpha-Amino Acid) Fibers
DOI:10.1002/adma.201101733 JN:ADVANCED MATERIALS PY:2011
TC:28 AU: Farrar, Dawnielle;Ren, Kailiang;Cheng, Derek;Kim, Sungjoo;Moon, Wonkyu;Wilson, William L.;West, James E.;Yu, S. Michael;
10:586:2 Dipeptide-assisted growth of uniform gallium oxohydroxide spindles
DOI:10.1016/j.jcrysgro.2010.03.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:11 AU: Lee, Inho;Kwak, Jinyoung;Haam, Seungjoo;Lee, Sang-Yup;
10:586:3 Preparation of LiNbO3 nanoparticles using poly(L-lysine) as a biomolecular additive
DOI:10.1016/j.matchemphys.2013.12.019 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Lim, Youngjoon;Lee, Sang-Yup;
10:586:4 Synthesis of zinc tin oxide (ZTO) nanocrystallites at room temperature through association with peptide-containing bolaamphiphile molecules
DOI:10.1016/j.jcis.2011.07.016 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:4 AU: Ahn, Sungjun;Kwon, Tae-Geun;Lee, Sang-Yup;
10:586:5 Synthesis and characterization of biodegradable polyurethanes based on L-cystine/cysteine and poly(epsilon-caprolactone)
DOI:10.1002/app.38613 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:1 AU: Wang, Jing;Zheng, Zhen;Wang, Quan;Du, Pengfei;Shi, Jinjun;Wang, Xinling;
10:586:6 Oligo(L-lysine)-induced titanium dioxide: Effects of consecutive lysine on precipitation
DOI:10.1016/j.jcrysgro.2011.09.006 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:5 AU: Ahn, Sungjun;Park, Sangwoo;Lee, Sang-Yup;
10:586:7 Solvothermal synthesis of mesoporous alpha-GaOOH semi-nanospheres
DOI:10.1016/j.matlet.2013.08.071 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Muruganandham, Manickavachagam;Suri, Rominder;Wahed, Mahmoud S. M. Abdel;Sillanpaa, Mika;Ahmmad, Bashir;Lee, Gang-Juan;Wu, Jerry J.;
10:586:8 Piezoelectric property of hot pressed electrospun poly(gamma-benzyl-alpha, L-glutamate) fibers
DOI:10.1007/s00339-012-6847-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:5 AU: Ren, Kailiang;Wilson, William L.;West, James E.;Zhang, Q. M.;Yu, S. Michael;
10:586:9 Improved Adhesion of Silicone Rubber to Polyurethane by Surface Grafting
DOI:10.1002/app.33008 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:4 AU: Wang, Jing;Xia, Weijuan;Liu, Kun;Tuo, Xinlin;
10:587:1 Naturally asymmetrical double-Schottky barrier model: Based on observation of bicrystal
DOI:10.1063/1.4764551 JN:APPLIED PHYSICS LETTERS PY:2012
TC:5 AU: Cheng, Chenlu;He, Jinliang;Hu, Jun;
10:587:2 Multidimensional SPM applied for nanoscale conductance mapping
DOI:10.1557/jmr.2013.365 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:1 AU: Bosse, James L.;Grishin, Ilja;Kolosov, Oleg V.;Huey, Bryan D.;
10:587:3 Observation of the charged defect migration that causes the degradation of double-Schottky barriers using a nondestructive quantitative profiling technique
DOI:10.1063/1.4897152 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Cheng, Chenlu;He, Jinliang;Hu, Jun;
10:587:4 Conductive-probe AFM characterization of graphene sheets bonded to gold surfaces
DOI:10.1016/j.apsusc.2011.10.152 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Hauquier, Fanny;Alamarguy, David;Viel, Pascal;Noel, Sophie;Filoramo, Arianna;Huc, Vincent;Houze, Frederic;Palacin, Serge;
10:587:5 Micro four-point probe investigation of individual ZnO grain boundaries in a varistor ceramic
DOI:10.1016/j.jeurceramsoc.2014.01.027 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2014
TC:5 AU: Nevosad, A.;Hofstaetter, M.;Supancic, R.;Danzer, R.;Teichert, C.;
10:587:6 Electrical characterization of ZnO multilayer varistors on the nanometre scale with conductive atomic force microscopy
DOI:10.1016/j.jeurceramsoc.2010.01.005 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:5 AU: Schloffer, Martin;Teichert, Christian;Supancic, Peter;Andreev, Andrei;Hou, Yue;Wang, Zhonghua;
10:587:7 Degradation Analysis of the SnO2 and ZnO-Based Varistors Using Electrostatic Force Microscopy
DOI:10.1111/jace.12241 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:3 AU: Ramirez, M. A.;Tararam, R.;Simoes, A. Z.;Ries, A.;Longo, E.;Varela, J. A.;
10:587:8 Voltage polarity dependent current paths through polycrystalline ZnO varistors
DOI:10.1016/j.jeurceramsoc.2013.06.017 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2013
TC:4 AU: Hofstaetter, Michael;Nevosad, Andreas;Teichert, Christian;Supancic, Peter;Danzer, Robert;
10:587:9 Characterization of dielectric behavior in ZnO electroceramic: Superior grain boundary, inferior grain boundary and grain
DOI:10.1016/j.matlet.2014.06.100 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Cheng, Chenlu;Hu, Jun;He, Jinliang;
10:588:1 Synthesis of SnO2 single-layered hollow microspheres and flowerlike nanospheres through a facile template-free hydrothermal method
DOI:10.1016/j.matlet.2012.12.108 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Zhang, Xiaohong;Huang, Mingxing;Qiao, Yingjie;
10:588:2 Large scale synthesis of flower-like SnO2 nanostructures via a facile hydrothermal route
DOI:10.1016/j.matlet.2013.09.081 JN:MATERIALS LETTERS PY:2013
TC:10 AU: He, Qiongyao;Zeng, Wen;Wang, Yang;Miao, Bin;Long, Huiwu;Miao, Zichun;Zhang, Zheng;Wang, Yuechen;
10:588:3 Preparation of hollow porous SnO2 microcubes and their gas-sensing property
DOI:10.1016/j.matlet.2014.08.015 JN:MATERIALS LETTERS PY:2014
TC:6 AU: Huang, Jiarui;Wang, Liyou;Gu, Cuiping;Shim, Jae-Jin;
10:588:4 Ink- jet Printing of Hollow SnO2 Nanospheres for Gas Sensing Applications
DOI:10.1111/jace.12832 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:1 AU: Von Hagen, Robin;Sneha, Mahima;Mathur, Sanjay;
10:588:5 Synthesis of SnO2 hollow microspheres with core-shell structures through a facile template-free hydrothermal method
DOI:10.1016/j.mseb.2010.03.048 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:10 AU: Guo, Y. Q.;Li, Y.;Tan, R. Q.;Song, W. J.;
10:588:6 One-dimensional CuO-SnO2 p-n heterojunctions for enhanced detection of H2S
DOI:10.1039/c3ta11867c JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2013
TC:9 AU: Giebelhaus, Irina;Varechkina, Elena;Fischer, Thomas;Rumyantseva, Marina;Ivanov, Vladimir;Gaskov, Alexander;Morante, Joan Ramon;Arbiol, Jordi;Tyrra, Wieland;Mathur, Sanjay;
10:588:7 Solution route to SnO2 crystals with controllable morphology
DOI:10.1016/j.apsusc.2011.06.037 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Guo, Y. Q.;Tan, R. Q.;Li, Y.;Song, W. J.;
10:588:8 Template-free fabrication of SnO2 hollow spheres with photoluminescence from Sn-i
DOI:10.1016/j.matlet.2010.06.070 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Yan, Weiwei;Fang, Ming;Tan, Xiaoli;Liu, Mao;Liu, Peisheng;Hu, Xiaoye;Zhang, Lide;
10:589:1 Improvement of Short-Circuit Current Density in p-Ni1-xO:Li/n-Si Heterojunction Solar Cells by Wet Chemical Etching
DOI:10.1155/2014/104136 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Hsu, Feng-Hao;Wang, Na-Fu;Tsai, Yu-Zen;Chien, Ming-Hao;Houng, Mau-Phon;
10:589:2 Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films
DOI:10.1016/j.matchemphys.2014.06.047 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:2 AU: Akgul, Funda Aksoy;Akgul, Guvenc;Yildirim, Nurcan;Unalan, Husnu Emrah;Turan, Rasit;
10:589:3 Photovoltaic properties of the p-CuO/n-Si heterojunction prepared through reactive magnetron sputtering
DOI:10.1063/1.4704382 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Gao, Fei;Liu, Xiao-Jing;Zhang, Jun-Shan;Song, Mei-Zhou;Li, Ning;
10:589:4 Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell
DOI:10.1016/j.matlet.2013.08.042 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Rajani, K. V.;Daniels, S.;Rahman, M.;Cowley, A.;McNally, P. J.;
10:589:5 Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions
DOI:10.1063/1.3531112 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Saini, Viney;Li, Zhongrui;Bourdo, Shawn;Kunets, Vasyl P.;Trigwell, Steven;Couraud, Arthur;Rioux, Julien;Boyer, Cyril;Nteziyaremye, Valens;Dervishi, Enkeleda;Biris, Alexandru R.;Salamo, Gregory J.;Viswanathan, Tito;Biris, Alexandru S.;
10:589:6 Inherent excitonic luminescence in metal halide promising for potential applications in light-emitting devices
DOI:10.1063/1.3374574 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Kondo, S.;Ohsawa, H.;Asada, H.;Saito, T.;
10:589:7 Deposition and characterization of nanostructured Cu2O thin-film for potential photovoltaic applications
DOI:10.1557/jmr.2013.150 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:7 AU: Gupta, Nishant;Singh, Rajendra;Wu, Fan;Narayan, Jagdish;McMillen, Colin;Alapatt, Githin F.;Poole, Kelvin F.;Hwu, Shiou-Jyh;Sulejmanovic, Dino;Young, Matthew;Teeter, Glenn;Ullal, Harin S.;
10:589:8 The synthesis and gas sensitivity of CuO micro-dimensional structures featuring a stepped morphology
DOI:10.1016/j.matlet.2012.05.024 JN:MATERIALS LETTERS PY:2012
TC:10 AU: Breedon, Michael;Zhuiykov, Serge;Miura, Norio;
10:590:1 Environment-dependent surface structures and stabilities of SnO2 from the first principles
DOI:10.1063/1.3694033 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Xu, Canhui;Jiang, Yong;Yi, Danqing;Sun, Shunping;Yu, Zhiming;
10:590:2 Nanoparticle characterization of Er-doped SnO2 pellets obtained with different pH of colloidal suspension
DOI:10.1063/1.4819089 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Ravaro, Leandro P.;Scalvi, Luis V. A.;Tabata, Americo S.;Pontes, Fenelon M. L.;Oliveira, Jose B. B.;
10:590:3 Study of blueshift of optical band gap in zinc oxide (ZnO) nanoparticles prepared by low-temperature wet chemical method
DOI:10.1016/j.matlet.2013.08.069 JN:MATERIALS LETTERS PY:2013
TC:10 AU: Debanath, M. K.;Karmakar, S.;
10:590:4 Antimicrobial activity of UV-induced chitosan capped silver nanoparticles
DOI:10.1016/j.matlet.2014.04.145 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Lou, Ching-Wen;Chen, An-Pang;Lic, Ting-Ting;Lin, Jia-Horng;
10:590:5 ZnO nanoparticles and porous coatings for dye-sensitized solar cell application: Photoelectrochemical characterization
DOI:10.1016/j.tsf.2011.08.095 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Al-Kahlout, A.;
10:590:6 Raman and photoluminescence of Er3+-doped SnO2 obtained via the sol-gel technique from solutions with distinct pH
DOI:10.1016/j.optmat.2010.08.001 JN:OPTICAL MATERIALS PY:2010
TC:5 AU: Ravaro, Leandro P.;Tabata, Americo;Oliveira, Jose Bras B.;Scalvi, Luis V. A.;
10:590:7 Structural understanding of the spectral characteristics of SnO2:Eu:Y2O3, using extended x-ray absorption fine structure
DOI:10.1063/1.3330705 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Lahiri, Debdutta;Ningthoujam, R. S.;Bhattacharyya, Dibyendu;Sharma, Surinder M.;
10:590:8 Photo-responsive behaviors and structural evolution of carbon-nanotube-supported energetic materials under a photoflash
DOI:10.1016/j.matlet.2012.08.049 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Xiang, Xu;Xiang, Shi-biao;Wang, Zheng;Wang, Xia;Hua, Guang;
10:591:1 Low-temperature growth and characterization of ZnO thin films for flexible inverted organic solar cells
DOI:10.1039/c1jm10914f JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:13 AU: Shin, Kyung-Sik;Park, Hye-Jeong;Kumar, Brijesh;Kim, Kyoung-Kook;Ihn, Soo-Ghang;Kim, Sang-Woo;
10:591:2 Low-temperature preparation of (002)-oriented ZnO thin films by sol-gel method
DOI:10.1016/j.tsf.2013.11.004 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Guo, Dongyun;Sato, Kuninori;Hibino, Shingo;Takeuchi, Tetsuya;Bessho, Hisami;Kato, Kazumi;
10:591:3 Semitransparent all-oxide p-NiO/n-ZnO nanowire ultraviolet photosensors
DOI:10.1557/jmr.2013.242 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:4 AU: Lee, Ki Ryong;Jung, Byung Oh;Cho, Sung Woon;Senthil, Karuppanan;Cho, Hyung Koun;
10:591:4 Laser ablated ZnO thin film for amperometric detection of urea
DOI:10.1063/1.4823853 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Batra, Neha;Tomar, Monika;Jain, Prateek;Gupta, Vinay;
10:591:5 Low-temperature crystallization of oriented ZnO film using seed layers prepared by sol-gel method
DOI:10.1007/s10853-011-5263-8 JN:JOURNAL OF MATERIALS SCIENCE PY:2011
TC:8 AU: Segawa, Hiroyo;Sakurai, Hideaki;Izumi, Reiko;Hayashi, Toshiharu;Yano, Tetsuji;Shibata, Shuichi;
10:591:6 Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors
DOI:10.1016/j.tsf.2014.10.092 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Estrada, M.;Gutierrez-Heredia, G.;Cerdeira, A.;Alvarado, J.;Garduno, I.;Tinoco, J.;Mejia, I.;Quevedo-Lopez, M.;
10:591:7 Fully patterned and low temperature transparent ZnO-based inverters
DOI:10.1016/j.tsf.2013.07.069 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Gutierrez-Heredia, G.;Mejia, I.;Rivas-Aguilar, M. E.;Hernandez-Como, N.;Martinez-Landeros, V. H.;Aguirre-Tostado, F. S.;Quevedo-Lopez, M. A.;
10:592:1 Effects of position, thickness, and annealing temperature of Ag buffer layer on the shape of ZnO nanocrystals grown by a simple hydrothermal process
DOI:10.1557/jmr.2013.354 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:0 AU: Li, Baojia;Huang, Lijing;Zhou, Ming;Ren, Naifei;
10:592:2 Hydrothermal zinc oxide nanowire growth using zinc acetate dihydrate salt
DOI:10.1557/jmr.2012.92 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:12 AU: Akgun, Mehmet Can;Kalay, Yunus Eren;Unalan, Husnu Emrah;
10:592:3 Electrostatic Field Force Directed Gold Nanowires from Anion Exchange Resin
DOI:10.1021/la102387x JN:LANGMUIR PY:2010
TC:8 AU: Sinha, Arun Kumar;Basu, Mrinmoyee;Sarkar, Sougata;Pradhan, Mukul;Pal, Tarasankar;
10:592:4 Stable, self-ballasting field emission from zinc oxide nanowires grown on an array of vertically aligned carbon nanofibers
DOI:10.1063/1.3380597 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Li, C.;Zhang, Y.;Mann, M.;Hiralal, P.;Unalan, H. E.;Lei, W.;Wang, B. P.;Chu, D. P.;Pribat, D.;Amaratunga, G. A. J.;Milne, W. I.;
10:592:5 Hydrothermal zinc oxide nanowire growth with different zinc salts
DOI:10.1557/jmr.2012.258 JN:JOURNAL OF MATERIALS RESEARCH PY:2012
TC:2 AU: Akgun, Mehmet Can;Afal, Aysegul;Unalan, Husnu Emrah;
10:592:6 Gold nanowires with high aspect ratio and morphological purity: Synthesis, characterization, and evaluation of parameters
DOI:10.1557/jmr.2012.407 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:1 AU: Dertli, Elcin;Coskun, Sahin;Esenturk, Emren Nalbant;
10:592:7 Synthesis of gold nanochains via photoactivation technique and their catalytic applications
DOI:10.1016/j.jcis.2013.01.061 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2013
TC:14 AU: Sinha, Arun Kumar;Basu, Mrinmoyee;Sarkar, Sougata;Pradhan, Mukul;Pal, Tarasankar;
10:593:1 Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates
DOI:10.1063/1.4868591 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:4 AU: Brochen, Stephane;Lafossas, Matthieu;Robin, Ivan-Christophe;Ferret, Pierre;Gemain, Frederique;Pernot, Julien;Feuillet, Guy;
10:593:2 Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate
DOI:10.1016/j.jcrysgro.2012.03.043 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Zhu, Guangyao;Gu, Shulin;Zhu, Shunming;Huang, Shimin;Gu, Ran;Ye, Jiandong;Zheng, Youdou;
10:593:3 Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO
DOI:10.1063/1.3681168 JN:APPLIED PHYSICS LETTERS PY:2012
TC:8 AU: Brochen, S.;Granier, C.;Feuillet, G.;Pernot, J.;
10:593:4 The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition
DOI:10.1016/j.jcrysgro.2010.06.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:9 AU: Liu, J. G.;Gu, S. L.;Zhu, S. M.;Tang, K.;Liu, X. D.;Chen, H.;Zheng, Y. D.;
10:593:5 Carrier gas and VI/II ratio effects on carbon clusters incorporation into ZnO films grown by MOCVD
DOI:10.1016/j.mssp.2013.02.020 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:2 AU: Marzouki, A.;Sayari, A.;Jomard, F.;Sallet, V.;Lusson, A.;Oueslati, M.;
10:593:6 Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO
DOI:10.1063/1.4871397 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Brochen, Stephane;Feuillet, Guy;Pernot, Julien;
10:593:7 Annealing and partial pressure ratio effects on ZnO films grown by metal-organic chemical vapor deposition using tert-butanol as oxidant
DOI:10.1016/j.tsf.2010.07.031 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Sayari, A.;Marzouki, A.;Lusson, A.;Oueslati, M.;Sallet, V.;
10:594:1 Effective Piezoelectric Response of Substrate-Integrated ZnO Nanowire Array Devices on Galvanized Steel
DOI:10.1021/am402679w JN:ACS APPLIED MATERIALS & INTERFACES PY:2013
TC:6 AU: Velazquez, Jesus M.;Baskaran, Sivapalan;Gaikwad, Anil V.;Tam-Triet Ngo-Duc;He, Xiangtong;Oye, Michael M.;Meyyappan, M.;Rout, Tapan K.;Fu, John Y.;Banerjee, Sarbajit;
10:594:2 The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering
DOI:10.1016/j.apsusc.2010.12.053 JN:APPLIED SURFACE SCIENCE PY:2011
TC:29 AU: Phan, Duy-Thach;Chung, Gwiy-Sang;
10:594:3 Evaluation. of Transverse Piezoelectric Coefficient of ZnO Thin Films Deposited on Different Flexible Substrates: A Comparative Study on the Vibration Sensing Performance
DOI:10.1021/am4060436 JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Joshi, Sudeep;Nayak, Manjunatha M.;Rajanna, K.;
10:594:4 Real time observation of mechanically triggered piezoelectric current in individual ZnO nanobelts
DOI:10.1039/c4tc00032c JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2014
TC:2 AU: Asthana, A.;Ardakani, H. A.;Yap, Y. K.;Yassar, R. S.;
10:594:5 Effect of post-deposition annealing on transverse piezoelectric coefficient and vibration sensing performance of ZnO thin films
DOI:10.1016/j.apsusc.2014.01.067 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Joshi, Sudeep;Nayak, M. M.;Rajanna, K.;
10:594:6 A Substrate-Integrated and Scalable Templated Approach Based on Rusted Steel for the Fabrication of Polypyrrole Nanotube Arrays
DOI:10.1021/am2000533 JN:ACS APPLIED MATERIALS & INTERFACES PY:2011
TC:5 AU: Velazquez, Jesus M.;Gaikwad, Anil V.;Rout, Tapan K.;Rzayev, Javid;Banerjee, Sarbajit;
10:594:7 Hybrid nanocomposite coatings for corrosion protection of low carbon steel: A substrate-integrated and scalable active-passive approach
DOI:10.1557/jmr.2010.100 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:4 AU: Rout, Tapan K.;Gaikwad, Anil V.;Lee, Vincent;Banerjee, Sarbajit;
10:595:1 Structural, optical and magnetic properties of gadolinium sesquioxide nanobars synthesized via thermal decomposition of gadolinium oxalate
DOI:10.1016/j.materresbull.2013.06.067 JN:MATERIALS RESEARCH BULLETIN PY:2013
TC:6 AU: Manigandan, R.;Giribabu, K.;Suresh, R.;Vijayalakshmi, L.;Stephen, A.;Narayanan, V.;
10:595:2 Porous alpha-Fe2O3 hollow microspheres: Hydrothermal synthesis and their application in ethanol sensors
DOI:10.1016/j.matlet.2013.03.037 JN:MATERIALS LETTERS PY:2013
TC:13 AU: Wang, Yan;Cao, Jian-Liang;Yu, Ming-Gao;Sun, Guang;Wang, Xiao-Dong;Bala, Hari;Zhang, Zhan-Ying;
10:595:3 Facile synthesis of cobalt doped hematite nanospheres: Magnetic and their electrochemical sensing properties
DOI:10.1016/j.matchemphys.2012.03.034 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:22 AU: Suresh, R.;Prabu, R.;Vijayaraj, A.;Giribabu, K.;Stephen, A.;Narayanan, V.;
10:595:4 A facile flame assisted approach to fabricate Ta2O5 microspheres
DOI:10.1016/j.matlet.2013.08.043 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Li, Jing;Chen, Xi;Sun, Mingxuan;Cui, Xiaoli;
10:595:5 Synthesis of tantalum pentoxide hollow spheres utilizing a sacrificial templating approach
DOI:10.1016/j.matlet.2014.08.023 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Abdelaal, Haitham Mohammad;Pfeifer, Erik;Gruenberg, Christina;Harbrecht, Bernd;
10:595:6 Microstructural effect of gadolinium oxide nanocrystals upon annealing on electrical properties of memory devices
DOI:10.1016/j.tsf.2012.04.042 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Huang, Michael R. S.;Liu, Chuan-Pu;Wang, Jer-Chyi;Chen, Yu-Kai;Lai, Chao-Sung;Fang, Yu-Ching;Shu, Li;
10:595:7 Glass/Ni-P/Co-Fe-P three layer hollow microspheres: Controlled fabrication and magnetic properties
DOI:10.1016/j.matlet.2012.07.003 JN:MATERIALS LETTERS PY:2012
TC:3 AU: An, Zhenguo;Zhang, Jingjie;
10:595:8 Thin film growth of epitaxial gadolinium oxide, gadolinium yttrium oxide, and gadolinium cerium oxide by electrodeposition
DOI:10.1016/j.tsf.2010.07.109 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Mann, Jonathan R.;Bhattacharya, Raghu N.;
10:596:1 Identification of zinc and oxygen vacancy states in nonpolar ZnO single crystal using polarized photoluminescence
DOI:10.1063/1.3525714 JN:APPLIED PHYSICS LETTERS PY:2010
TC:16 AU: Liu, J.;Zhao, Y.;Jiang, Y. J.;Lee, C. M.;Liu, Y. L.;Siu, G. G.;
10:596:2 Photo- and cathodoluminescence of the cetylpyridinium chloride: ZnO nanocomposites
DOI:10.1080/14786435.2014.907931 JN:PHILOSOPHICAL MAGAZINE PY:2014
TC:0 AU: Omelchenko, M. M.;Panasyuk, M. R.;Kapustianyk, V. B.;
10:596:3 Second-harmonic generation studies of implantation defects depth profile in hydrogen implanted garnet film
DOI:10.1063/1.4901900 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bonda, A.;Uba, S.;Uba, L.;
10:596:4 Nonlinear magnetization-induced terms in garnet film polarization in the second-harmonic generation effect: Theory and experiment
DOI:10.1103/PhysRevB.87.024426 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Bonda, A.;Uba, S.;Uba, L.;
10:596:5 Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals
DOI:10.1063/1.3651379 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Zheng, C. C.;Xu, S. J.;Ning, J. Q.;Chen, Y. N.;Lu, X. H.;Ling, C-C.;Che, C. M.;Gao, G. Y.;Hao, J. H.;Brauer, G.;Anwand, W.;
10:596:6 Nature of red luminescence band in research-grade ZnO single crystals: A "self-activated" configurational transition
DOI:10.1063/1.4892356 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Chen, Y. N.;Xu, S. J.;Zheng, C. C.;Ning, J. Q.;Ling, F. C. C.;Anwand, W.;Brauer, G.;Skorupa, W.;
10:596:7 Light-induced change in magnetization-induced second harmonic generation of Fe0.52Rh0.48 films
DOI:10.1063/1.3634114 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Nuida, Tomohiro;Yamauchi, Takahiro;Ohkoshi, Shin-ichi;
10:596:8 Inner surface enhanced femtosecond second harmonic generation in thin ZnO crystal tubes
DOI:10.1063/1.3531566 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Zheng, C. C.;Xu, S. J.;Ning, J. Q.;Zhang, S. F.;Wang, J. Y.;Che, C. M.;Hao, J. H.;
10:596:9 Fabrication and characterization of three-dimensional core-shell structure ZnO photonic crystals by magnetron sputtering based on opal template
DOI:10.1016/j.jcrysgro.2010.05.029 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:4 AU: Xiong Yu-Ying;Kang Feng;Ke Zheng;Zhuo Shi-Yi;Liang Cui-Fen;Zhang Zhenxi;
10:597:1 Structure and photoluminescence of amorphous silicate composites containing ZnO particles synthesized from layered sodium silicate
DOI:10.1016/j.jnoncrysol.2012.05.013 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:2 AU: Chen, Yufeng;Yu, Gensheng;Li, Fei;Wei, Junchao;
10:597:2 The structure of simple silicate glasses in the light of Middle Infrared spectroscopy studies
DOI:10.1016/j.jnoncrysol.2011.01.007 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:17 AU: Sitarz, M.;
10:597:3 Biomimetic growth of gallic acid-ZnO hybrid assemblies and their applications
DOI:10.1007/s11051-012-0773-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:0 AU: Sarker, Nazmul H.;Barnaby, Stacey N.;Fath, Karl R.;Frayne, Stephen H.;Nakatsuka, Nako;Banerjee, Ipsita A.;
10:597:4 The influence of the grain size distribution of raw materials on the selected surface properties of sanitary glazes
DOI:10.1016/j.ceramint.2010.12.006 JN:CERAMICS INTERNATIONAL PY:2011
TC:9 AU: Partyka, Janusz;Lis, Jerzy;
10:597:5 Vacuum fluorescent displays utilizing ZnO nanoparticles
DOI:10.1063/1.3536631 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Aaronson, Charles H.;Amekura, Hiro;Sato, Yoshitaka;Kishimoto, Naoki;
10:597:6 Hydrothermal and post-heat treatments of TiO2/ZnO composite powder and its photodegradation behavior on methyl orange
DOI:10.1016/j.ceramint.2011.03.067 JN:CERAMICS INTERNATIONAL PY:2011
TC:7 AU: Xu, Xingming;Wang, Jianfei;Tian, Jintao;Wang, Xin;Dai, Jinhui;Liu, Xiaoyun;
10:597:7 Effects of quartz grain size distribution on the structure of porcelain glaze
DOI:10.1016/j.ceramint.2014.04.044 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Partyka, J.;Gajek, M.;Gasek, K.;
10:597:8 Chemical corrosion of sanitary glazes of variable grain size composition in acid and basic aqueous solution media
DOI:10.1016/j.ceramint.2011.07.043 JN:CERAMICS INTERNATIONAL PY:2012
TC:2 AU: Partyka, Janusz;Lis, Jerzy;
10:598:1 Effect of oxygen flow rate and radio-frequency power on the photoconductivity of highly ultraviolet sensitive ZnO thin films grown by magnetron sputtering
DOI:10.1016/j.materresbull.2011.07.019 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:10 AU: Ghosh, T.;Basak, D.;
10:598:2 Rapid thermal-plasma annealing of ZnO:Al films for silicon thin-film solar cells
DOI:10.1016/j.tsf.2011.04.043 JN:THIN SOLID FILMS PY:2011
TC:17 AU: Ohta, N.;Ohba, D.;Sato, S.;Tang, Z.;Shimizu, H.;Shirai, H.;
10:598:3 Sol-gel derived Ag-doped ZnO thin film for UV photodetector with enhanced response
DOI:10.1007/s10853-013-7611-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:5 AU: Rajan, Akshta;Yadav, Harish Kumar;Gupta, Vinay;Tomar, Monika;
10:598:4 Rapid thermal annealing treatment of ZnO: Al films for photovoltaic applications
DOI:10.1016/j.jnoncrysol.2012.03.026 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:0 AU: Tang, Zeguo;Koshino, Hideto;Sato, Shunsuke;Shimizu, Hirokazu;Shirai, Hajime;
10:598:5 Effects of power on properties of ZnO thin films grown by radio frequency magnetron sputtering
DOI:10.1016/j.apsusc.2012.12.055 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Zhao, Ya-Jun;Jiang, Da-Yong;Zhao, Man;Deng, Rui;Qin, Jie-Ming;Gao, Shang;Liang, Qing-Cheng;Zhao, Jian-Xun;
10:598:6 Role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films
DOI:10.1063/1.3457867 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Jie, Jin;Morita, Aya;Shirai, Hajime;
10:598:7 Effect of substrate-induced strain on the morphological, electrical, optical and photoconductive properties of RF magnetron sputtered ZnO thin films
DOI:10.1016/j.materresbull.2011.03.011 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:13 AU: Ghosh, T.;Dutta, M.;Basak, D.;
10:598:8 Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films
DOI:10.1016/j.tsf.2014.03.038 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Saha, B.;Das, N. S.;Chattopadhyay, K. K.;
10:599:1 Grain-Boundary and Thermally Stimulated Current Characteristics of Y2O3-Doped ZnO Varistor
DOI:10.1111/jace.12517 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:0 AU: Tu, Youping;Zheng, Zenghui;Li, Xiao;Wang, Qian;Luo, Meixin;
10:599:2 Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
DOI:10.1063/1.4768839 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Huang, Hsin-Wei;Chang, Wen-Chih;Lin, Su-Jien;Chueh, Yu-Lun;
10:599:3 Non-uniform ageing behavior of individual grain boundaries in ZnO varistor ceramics
DOI:10.1016/j.jeurceramsoc.2011.01.024 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2011
TC:9 AU: He, Jinliang;Liu, Jun;Hu, Jun;Zeng, Rong;Long, Wangcheng;
10:599:4 Effects of cobalt doping on the electrical characteristics of Al-doped ZnO varistors
DOI:10.1016/j.matlet.2010.02.019 JN:MATERIALS LETTERS PY:2010
TC:7 AU: Long, Wangcheng;Hu, Jun;Liu, Jun;He, Jinliang;
10:599:5 Temperature Dependences of Leakage Currents of ZnO Varistors Doped with Rare-Earth Oxides
DOI:10.1111/j.1551-2916.2010.03692.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:2 AU: Hu, Jun;He, Jinliang;Long, Wangcheng;Liu, Jun;
10:599:6 Statistics on the AC ageing characteristics of single grain boundaries of ZnO varistor
DOI:10.1016/j.matchemphys.2010.09.023 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:3 AU: Liu, Jun;He, Jinliang;Hu, Jun;Long, Wangcheng;Luo, Fengchao;
10:599:7 The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method
DOI:10.1016/j.tsf.2011.04.210 JN:THIN SOLID FILMS PY:2011
TC:2 AU: O'Brien, Shane;Copuroglu, Mehmet;Tassie, Paul;Nolan, Mark G.;Hamilton, Jeff A.;Povey, Ian;Pereira, Luis;Martins, Rodrigo;Fortunato, Elvira;Pemble, Martyn E.;
10:599:8 Microstructure and electrical properties of Pr6O11-Co3O4-MnCO3-Y2O3-doped ZnO varistors
DOI:10.1016/j.ceramint.2011.03.076 JN:CERAMICS INTERNATIONAL PY:2011
TC:3 AU: Wang, Mao-hua;Li, Gang;Yao, Chao;
10:599:9 Statistical Pulse Degradation Characteristics of Grain Boundaries in a ZnO Varistor Based on Microcontact Measurement
DOI:10.1111/j.1551-2916.2010.03834.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:2 AU: Liu, Jun;He, Jinliang;Hu, Jun;Long, Wangcheng;Zeng, Rong;
10:599:10 AC ageing characteristics of Y2O3-doped ZnO varistors with high voltage gradient
DOI:10.1016/j.matlet.2011.06.022 JN:MATERIALS LETTERS PY:2011
TC:5 AU: He, Jinliang;Liu, Jun;Hu, Jun;Long, Wangcheng;
10:600:1 Effect of microwave power on the morphology and optical property of zinc oxide nano-structures prepared via a microwave-assisted aqueous solution method
DOI:10.1016/j.matchemphys.2010.09.038 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:18 AU: Al-Gaashani, R.;Radiman, S.;Tabet, N.;Daud, A. Razak;
10:600:2 Synthesis of Ce1-xErxO2-y nanoparticles by the hydrothermal method: Effect of microwave radiation on morphology and phase composition
DOI:10.1016/j.ceramint.2014.06.077 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Mendiuk, Oksana;Kepinski, Leszek;
10:600:3 Microwave-assisted synthesis of Mo-Cu nano-powders at an ultra-low temperature and their sintering properties
DOI:10.1016/j.matchemphys.2014.08.026 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:0 AU: Sun, Aokui;Wang, Dezhi;Wu, Zhuangzhi;Li, Liaohuan;Wang, Jinshu;Duan, Bohua;
10:600:4 Preparation and characterization of polyaniline/cerium dioxide (CeO2) nanocomposite via in situ polymerization
DOI:10.1007/s10853-012-6655-0 JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:8 AU: Kumar, E.;Selvarajan, P.;Muthuraj, D.;
10:600:5 Electrochemical biosensor with ceria-polyaniline core shell nano-interface for the detection of carbonic acid in blood
DOI:10.1016/j.jcis.2014.03.041 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2014
TC:2 AU: Singh, Mudit;Nesakumar, Noel;Sethuraman, Swaminathan;Krishnan, Uma Maheswari;Rayappan, John Bosco Balaguru;
10:600:6 Preparation of shape-controlled CeO2 nanocrystals via microwave-assisted method
DOI:10.1016/j.matchemphys.2010.07.007 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:9 AU: Tao, Yu;Wang, Hui;Xia, Yanping;Zhang, Guoqing;Wu, Haiping;Tao, Guoliang;
10:600:7 Synthesis of novel core-shell Cu@Mo nanoparticles with good sinterability
DOI:10.1016/j.jallcom.2012.12.033 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Sun, Aokui;Dong, Xiaojia;Wang, Xiaoying;Duan, Bohua;Wang, Dezhi;
10:601:1 Ti/Cu bilayer electrodes for SiNx-passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance
DOI:10.1063/1.3505151 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Park, Joon Seok;Kim, Tae Sang;Son, Kyoung Seok;Lee, Eunha;Jung, Ji Sim;Lee, Kwang-Hee;Maeng, Wan-Joo;Kim, Hyun-Suk;Kim, Eok Su;Park, Kyung-Bae;Kwon, Jang-Yeon;Ryu, Myung Kwan;Lee, Sang Yoon;
10:601:2 Self-assembled Nano layers as Interfacial Diffusion Barriers for Thermally Stable and Low Contact Resistance Cu Source/Drain Electrode in a-Si:H TFT-LCDs
DOI:10.1007/s13391-011-1092-9 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:10 AU: Han, Jung Suk;Lee, Chiyoung;Lee, Jaegab;
10:601:3 Effects of solvent on the formation of the MUA monolayer on Si and its diffusion barrier properties for Cu metallization
DOI:10.1007/s13391-013-3339-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Rahman, Mohammad Arifur;Han, Jung Suk;Jeong, Kyunghoon;Nam, Ho-seok;Lee, Jaegab;
10:601:4 Defeating the trade-off between process complexity and electrical performance with vertical zinc oxide transistors
DOI:10.1063/1.4765340 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Nelson, S. F.;Levy, D. H.;Tutt, L. W.;
10:601:5 Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target
DOI:10.1007/s11664-011-1728-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:2 AU: Lee, J. H.;Lee, C. Y.;Nam, H. S.;Lee, J. G.;Yang, H. J.;Ho, W. J.;Jeong, J. Y.;Koo, D. H.;
10:601:6 Effect of gate dielectric scaling in nanometer scale vertical thin film transistors
DOI:10.1063/1.3664217 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Moradi, M.;Fomani, A. A.;Nathan, A.;
10:601:7 Self-assembled Nano layers as Interfacial Diffusion Barriers for Thermally Stable and Low Contact Resistance Cu Source/Drain Electrode in a-Si:H TFT-LCDs (vol 8, pg 21, 2012)
DOI:10.1007/s13391-012-2092-0 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:0 AU: Han, Jung Suk;Lee, Chiyoung;Lee, Jaegab;
10:601:8 Characteristics of reactively sputtered niobium nitride thin films as diffusion barriers for Cu metallization
DOI:10.1007/s13391-012-2173-0 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Huang, Cheng-Lin;Lai, Chih-Huang;Tsai, Po-Hao;Huang, Hsing-An;Lin, Jing-Cheng;Lee, Chiapyng;
10:601:9 Effects of Film Thickness and Deposition Rate on the Diffusion Barrier Performance of Titanium Nitride in Cu-Through Silicon Vias
DOI:10.1007/s13391-013-3108-0 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:4 AU: Lee, Young-Joo;Yeon, Han-Wool;Jung, Sung-Yup;Na, Se-Kwon;Park, Jong-Seung;Choi, Yong-Yoon;Lee, Hoo-Jeong;Song, Oh-Sung;Joo, Young-Chang;
10:602:1 ZnO morphological, structural and optical properties control by electrodeposition potential sweep rate
DOI:10.1016/j.matchemphys.2012.03.101 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:4 AU: Matei, Elena;Enculescu, Monica;Preda, Nicoleta;Enculescu, Ionut;
10:602:2 Process optimization of deposition conditions of PbS thin films grown by a successive ionic layer adsorption and reaction (SILAR) method using response surface methodology
DOI:10.1016/j.jcrysgro.2015.04.018 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Yucel, Ersin;Yucel, Yasin;Beleli, Buse;
10:602:3 Morphology and photoluminescence study of electrodeposited ZnO films
DOI:10.1016/j.apsusc.2010.08.005 JN:APPLIED SURFACE SCIENCE PY:2010
TC:5 AU: Sun, Sheng-Nan;Mari, B.;Wu, Hong-Lin;Mollar, M.;Cui, Hai-Ning;
10:602:4 Effect of the cathodic polarization on structural and morphological proprieties of FTO and ITO thin films
DOI:10.1016/j.apsusc.2013.02.085 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Pla Cid, C. C.;Spada, E. R.;Sartorelli, M. L.;
10:602:5 Electrochromic switching of electrodeposited ZnO + Zn-5(OH)(8)Cl-2 films
DOI:10.1016/j.matlet.2011.07.052 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Rayon, E.;Cembrero, J.;Mari, B.;
10:602:6 Variable section ZnO nanostructures electrodeposited by dynamic polarization currents
DOI:10.1016/j.matlet.2010.08.036 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Rayon, E.;Cembrero, J.;Mari, B.;
10:602:7 Optical and structural properties of zinc oxide films with different thicknesses prepared by successive ionic layer adsorption and reaction method
DOI:10.1016/j.tsf.2011.04.066 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Taner, Ahmet;Kul, Metin;Turan, Evren;Aybek, A. Senol;Zor, Muhsin;Taskopru, Turan;
10:602:8 In situ calorimetric investigation of ZnO transformation from flower-like nanostructures to microrod
DOI:10.1016/j.matchemphys.2010.02.025 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:1 AU: Wu, Jian;Chen, Sanping;Gao, Shengli;
10:602:9 The effect of introducing Al ions in cationic deposition bath on as-prepared PbS thin film through SILAR deposition method
DOI:10.1016/j.mssp.2014.03.016 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:3 AU: Preetha, K. C.;Remadevi, T. L.;
10:602:10 Annealing effect on cadmium in situ doping of chemical bath deposited PbS thin films
DOI:10.1016/j.tsf.2012.03.114 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Thangavel, S.;Ganesan, S.;Saravanan, K.;
10:603:1 Copper and iron based thin film nanocomposites prepared by radio frequency sputtering. Part I: elaboration and characterization of metal/oxide thin film nanocomposites using controlled in situ reduction process
DOI:10.1007/s10853-012-7123-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:4 AU: Barnabe, A.;Chapelle, A.;Presmanes, L.;Tailhades, P.;
10:603:2 Photocatalytic and antibacterial properties of TaON-Ag nanocomposite thin films
DOI:10.1016/j.tsf.2010.04.109 JN:THIN SOLID FILMS PY:2010
TC:14 AU: Hsieh, J. H.;Chang, C. C.;Chang, Y. K.;Cherng, J. S.;
10:603:3 CO2 sensing properties of semiconducting copper oxide and spinel ferrite nanocomposite thin film
DOI:10.1016/j.apsusc.2010.02.079 JN:APPLIED SURFACE SCIENCE PY:2010
TC:14 AU: Chapelle, A.;Oudrhiri-Hassani, F.;Presmanes, L.;Barnabe, A.;Tailhades, Ph.;
10:603:4 Copper and iron based thin film nanocomposites prepared by radio-frequency sputtering. Part II: elaboration and characterization of oxide/oxide thin film nanocomposites using controlled ex-situ oxidation process
DOI:10.1007/s10853-012-7116-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:3 AU: Chapelle, A.;Barnabe, A.;Presmanes, L.;Tailhades, P.;
10:603:5 Microstructural analysis and optoelectrical properties of Cu2O, Cu2O-Ag, and Cu2O/Ag2O multilayered nanocomposite thin films
DOI:10.1016/j.tsf.2011.01.081 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Tseng, C. C.;Hsieh, J. H.;Wu, W.;
10:603:6 Electron affinities and ionization energies of Cu and Ag delafossite compounds: A hybrid functional study
DOI:10.1103/PhysRevB.89.045306 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Miao, Mao-Sheng;Yarbro, Sam;Barton, Phillip T.;Seshadri, Ram;
10:603:7 In-situ Raman monitoring of stress evaluation and reaction in Cu2O oxide layer
DOI:10.1016/j.matlet.2012.03.015 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Zheng, Yao-Ting;Xuan, Fu-Zhen;Wang, Zhengdong;
10:604:1 Synthesis of In2O3 Nanowire-Decorated Ga2O3 Nanobelt Heterostructures and Their Electrical and Field-Emission Properties
DOI:10.1021/nn100254f JN:ACS NANO PY:2010
TC:35 AU: Lin, Jing;Huang, Yang;Bando, Yoshio;Tang, Chengchun;Li, Chun;Golberg, Dmitri;
10:604:2 Photoluminescence and field emission of 1D ZnO nanorods fabricated by thermal evaporation
DOI:10.1007/s00339-012-6870-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Wang, B.;Jin, X.;Ouyang, Z. B.;Xu, P.;
10:604:3 Growth and field emission property of ZnO nanograsses
DOI:10.1016/j.matlet.2013.10.046 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Dong, H. M.;Yang, Y. H.;Yang, G. W.;
10:604:4 Synthesis of beta-Ga2O3 nanowires as a broadband emitter
DOI:10.1007/s00339-010-6094-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:6 AU: Tien, L. C.;Ho, C. H.;Yao, X. T.;Cai, J. R.;
10:604:5 Field emission and photoluminescence of ZnO nanocombs
DOI:10.1007/s00339-013-7867-0 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Wang, B.;Wu, H. Y.;Zheng, Z. Q.;Yang, Y. H.;
10:604:6 Cathodoluminescence and Field-Emission Properties of beta-Ga2O3 Nanobelts
DOI:10.1007/s11664-012-2239-7 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:1 AU: Tien, Li-Chia;Tseng, Chih-Cheng;Ho, Ching-Hwa;
10:604:7 Thin-walled B-C-N ternary microtubes: from synthesis to electrical, cathodoluminescence and field-emission properties
DOI:10.1039/c2jm16844h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:8 AU: Lin, Jing;Huang, Yang;Tang, Chengchun;Bando, Yoshio;Zou, Jin;Golberg, Dmitri;
10:604:8 Field emission properties originated from 2D electronics gas successively tunneling for 1D heterostructures of ZnO nanobelts decorated with In2O3 nanoteeth
DOI:10.1007/s11051-012-1008-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:5 AU: Wang, B.;Jin, X.;Ouyang, Z. B.;Xu, P.;
10:604:9 ZnO and ZnS composited tri-crystal nanoribbons
DOI:10.1016/j.matlet.2011.03.025 JN:MATERIALS LETTERS PY:2011
TC:1 AU: Fan, Xia;Kong, Yan;Shafiq, Ismathullakhan;Lee, Shuittong;Li, Fuqiang;Meng, Xiangmin;Jiang, Lei;
10:605:1 A SIMS study on Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by metal organic chemical vapor deposition
DOI:10.1016/j.apsusc.2011.05.038 JN:APPLIED SURFACE SCIENCE PY:2011
TC:6 AU: Yang, L. L.;Zhao, Q. X.;Xing, G. Z.;Wang, D. D.;Wu, T.;Willander, M.;Ivanov, I.;Yang, J. H.;
10:605:2 Spontaneous polarization driven Mg concentration profile reconstruction in MgZnO/ZnO heterostructures
DOI:10.1063/1.4884383 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Imasaka, K.;Falson, J.;Kozuka, Y.;Tsukazaki, A.;Kawasaki, M.;
10:605:3 Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition
DOI:10.1063/1.4902007 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhao, Q. X.;Liu, X. J.;Holtz, P. O.;
10:605:4 Enhancement of exciton photoluminescence intensity caused by the distortion of the crystal plane originating from the internal strain in a ZnO wafer
DOI:10.1063/1.3672155 JN:AIP ADVANCES PY:2011
TC:0 AU: Takeuchi, Hideo;
10:605:5 Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers
DOI:10.1016/j.apsusc.2012.12.007 JN:APPLIED SURFACE SCIENCE PY:2013
TC:6 AU: Liu, Neng;Dubowski, Jan J.;
10:605:6 Excimer laser-assisted chemical process for formation of hydrophobic surface of Si (001)
DOI:10.1007/s00339-014-8380-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Liu, Neng;Hassen, Walid M.;Dubowski, Jan J.;
10:605:7 Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures
DOI:10.1063/1.4830010 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Das, Amit K.;Misra, P.;Ajimsha, R. S.;Bose, A.;Joshi, S. C.;Porwal, S.;Sharma, T. K.;Oak, S. M.;Kukreja, L. M.;
10:605:8 Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS study
DOI:10.1016/j.apsusc.2009.09.064 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Lee, J.;Metson, J.;Evans, P. J.;Pal, U.;Bhattacharyya, D.;
10:605:9 An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
DOI:10.1016/j.apsusc.2011.10.079 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Ghumman, C. A. A.;Moutinho, A. M. C.;Santos, A.;Teodoro, O. M. N. D.;Tolstogouzov, A.;
10:606:1 Surface-Assisted Unidirectional Orientation of ZnO Nanorods Hybridized with Nematic Liquid Crystals
DOI:10.1021/am404451z JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:1 AU: Kubo, Shoichi;Taguchi, Rei;Hadano, Shingo;Narita, Mamiko;Watanabe, Osamu;Iyoda, Tomokazu;Nakagawa, Masaru;
10:606:2 Liquid-Crystalline Polymer Composites with CdS Nanorods: Structure and Optical Properties
DOI:10.1021/la203258r JN:LANGMUIR PY:2011
TC:19 AU: Ezhov, Alexander A.;Shandryuk, Georgii A.;Bondarenko, Galina N.;Merekalov, Alexey S.;Abramchuk, Sergey S.;Shatalova, Alina M.;Manna, Pramit;Zubarev, Eugene R.;Talroze, Raisa V.;
10:606:3 Photoluminescent CdSe@CdS/2D as potential biocompatible materials
DOI:10.1039/c2tb00255h JN:JOURNAL OF MATERIALS CHEMISTRY B PY:2013
TC:1 AU: Castello Serrano, Ivan;Stoica, Georgiana;Figuerola, Albert;Palomares, Emilio;
10:606:4 Positive temperature coefficient of resistance of single ZnO nanorods
DOI:10.1088/0957-4484/22/6/065304 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: He, Guan-nan;Huang, Bo;Shen, Hui;
10:606:5 Electrically controlled polarized photoluminescence of CdSe/ZnS nanorods embedded in a liquid crystal template
DOI:10.1088/0957-4484/23/32/325201 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Mukhina, M. V.;Danilov, V. V.;Orlova, A. O.;Fedorov, M. V.;Artemyev, M. V.;Baranov, A. V.;
10:606:6 A Strong-Fluorescent Tb-Containing Hydrotalcite-Like Compound
DOI:10.1111/j.1551-2916.2010.03728.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:8 AU: Chen, Hong;Zhang, Wen-Gong;
10:607:1 Vanadium doping on magnetic properties of H-passivated ZnO nanowires
DOI:10.1007/s10853-014-8020-y JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:2 AU: Lu, Pengfei;Zhang, Xianlong;Cao, Huawei;Yu, Zhongyuan;Cai, Ningning;Gao, Tao;Wang, Shumin;
10:607:2 First-principles study on electronic and magnetic properties of (Mn,Fe)-codoped ZnO
DOI:10.1010/j.jmmm.2013.10.008 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2014
TC:4 AU: Cao, Huawei;Lu, Pengfei;Cai, Ningning;Zhang, Xianlong;Yu, Zhongyuan;Gao, Tao;Wang, Shumin;
10:607:3 Structural, electronic and magnetic properties of Cr-doped Cd12S12 clusters: A density functional investigation
DOI:10.1016/j.jmmm.2009.10.051 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:7 AU: Ghosh, S.;Sanyal, B.;Das, G. P.;
10:607:4 Electronic structure and magnetism of V-doped AlN
DOI:10.1016/j.jmmm.2012.11.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:11 AU: Yao, Guangrui;Fan, Guanghan;Xing, Haiying;Zheng, Shuwen;Ma, Jiahong;Zhang, Yong;He, Longfei;
10:607:5 Investigation on structural, electronic, and magnetic properties of Mn-doped Ga12N12 clusters
DOI:10.1007/s10853-013-7674-1 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: Lu, Pengfei;Wu, Chengjie;Li, Yiluan;Yu, Zhongyuan;Cao, Huawei;Wang, Shumin;
10:607:6 First principles analysis on V3+ doped aluminum nitride
DOI:10.1016/j.commatsci.2010.05.022 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:3 AU: Thapa, R.;Saha, B.;Chattopadhyay, K. K.;
10:607:7 Studies on structures, electronic and magnetic properties of TM-doped InnSbn (n=7-12,14,16) clusters (TM=Mn, Fe, and Co)
DOI:10.1063/1.3531533 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Ding, Jian-Ning;Yuan, Ning-Yi;Li, Chang-Lin;Wang, Xiu-Qin;Chen, Guang-Gui;Chen, Xiao-Shuang;Lu, Wei;
10:607:8 First-principles analysis on V-doped GaN
DOI:10.1016/j.optmat.2012.04.001 JN:OPTICAL MATERIALS PY:2012
TC:8 AU: Yao, Guangrui;Fan, Guanghan;Zheng, Shuwen;Ma, Jiahong;Chen, Jun;Zhou, Detao;Li, Shuti;Zhang, Yong;Su, Shichen;
10:607:9 First-principles study of electronic structure and magnetism of cubic Al1-xErxN using the LSDA plus U approach
DOI:10.1016/j.jmmm.2010.12.039 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:3 AU: Dridi, Z.;Lazreg, A.;Bouhafs, B.;
10:608:1 Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells
DOI:10.1016/j.tsf.2011.06.095 JN:THIN SOLID FILMS PY:2011
TC:15 AU: Steinhauser, Jerome;Meyer, Stefan;Schwab, Marlene;Fay, Sylvie;Ballif, Christophe;Kroll, U.;Borrello, D.;
10:608:2 Electronic Granularity and the Work Function of Transparent Conducting ZnO:Al Thin Films
DOI:10.1002/adfm.201101069 JN:ADVANCED FUNCTIONAL MATERIALS PY:2011
TC:10 AU: Jaramillo, Rafael;Ramanathan, Shriram;
10:608:3 Quantitative analyses of damp-heat-induced degradation in transparent conducting oxides
DOI:10.1016/j.solmat.2013.12.014 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2014
TC:7 AU: Kim, Jae Ik;Lee, Woojin;Hwang, Taehyun;Kim, Jongmin;Lee, Seung-Yoon;Kang, Suji;Choi, Hongsik;Hong, Saeromi;Park, Helen Hejin;Moon, Taeho;Park, Byungwoo;
10:608:4 Damp heat stability of Al-doped zinc oxide films on smooth and rough substrates
DOI:10.1016/j.tsf.2011.04.190 JN:THIN SOLID FILMS PY:2011
TC:9 AU: Greiner, D.;Gledhill, S. E.;Koeble, Ch;Krammer, J.;Klenk, R.;
10:608:5 Influence of the atmospheric species water, oxygen, nitrogen and carbon dioxide on the degradation of aluminum doped zinc oxide layers
DOI:10.1016/j.tsf.2014.07.005 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Theelen, Mirjam;Dasgupta, Supratik;Vroon, Zeger;Kniknie, Bas;Barreau, Nicolas;van Berkum, Jurgen;Zeman, Miro;
10:608:6 Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se-2 solar cells
DOI:10.1016/j.tsf.2013.10.149 JN:THIN SOLID FILMS PY:2014
TC:5 AU: Theelen, Mirjam;Boumans, Twan;Stegeman, Felix;Colberts, Fallon;Illiberi, Andrea;van Berkum, Jurgen;Barreau, Nicolas;Vroon, Zeger;Zeman, Miro;
10:608:7 Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution
DOI:10.1016/j.mseb.2012.12.012 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:1 AU: David, C.;Paumier, F.;Tinkham, B. P.;Eyidi, D.;Marteau, M.;Guerin, P.;Girardeau, T.;
10:608:8 Improved thermal stability of ZnO transparent conducting films with a ZnO overlayer
DOI:10.1016/j.tsf.2011.01.211 JN:THIN SOLID FILMS PY:2011
TC:5 AU: Kang, J. -H.;Kim, D. W.;Kim, J. H.;Lim, Y. S.;Lee, M. -H.;Seo, W-S;Choi, H. J.;Seo, K. H.;Park, M. G.;
10:609:1 Robust silica-coated quantum dot-molecular beacon for highly sensitive DNA detection
DOI:10.1016/j.bios.2011.02.049 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:22 AU: Wu, Chung-Shieh;Oo, Maung Kyaw Khaing;Cupps, Jay M.;Fan, Xudong;
10:609:2 A reusable quartz crystal microbalance biosensor for highly specific detection of single-base DNA mutation
DOI:10.1016/j.bios.2013.04.035 JN:BIOSENSORS & BIOELECTRONICS PY:2013
TC:16 AU: Wang, Dingzhong;Chen, Gengjia;Wang, Huaming;Tang, Wei;Pan, Wei;Li, Na;Liu, Feng;
10:609:3 Detection of C677T mutation of MTHFR in subject with coronary heart disease by hairpin probe with enzymatic color on microarray
DOI:10.1016/j.bios.2011.07.002 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:2 AU: Chen, Qinghai;Sun, Yue;Zhang, Linqun;Deng, Kun;Xia, Han;Xing, Hua;Xiang, Yang;Ran, Boli;Zhang, Mohan;Xu, Xiaodong;Fu, Weiling;
10:609:4 Aqueous CdPbS quantum dots for near-infrared imaging
DOI:10.1088/0957-4484/23/27/275601 JN:NANOTECHNOLOGY PY:2012
TC:10 AU: Au, Giang H. T.;Shih, Wan Y.;Tseng, S-Ja;Shih, Wei-Heng;
10:609:5 Stable and luminescent wurtzite CdS, ZnS and CdS/ZnS core/shell quantum dots
DOI:10.1007/s00339-014-8513-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Kumar, Hitanshu;Kumar, Manoj;Barman, P. B.;Singh, Ragini Raj;
10:609:6 Direct fluorescence in situ hybridization (FISH) in Escherichia coli with a target-specific quantum dot-based molecular beacon
DOI:10.1016/j.bios.2010.07.067 JN:BIOSENSORS & BIOELECTRONICS PY:2010
TC:15 AU: Wu, Sheng-Mei;Tian, Zhi-Quan;Zhang, Zhi-Ling;Huang, Bi-Hai;Jiang, Peng;Xie, Zhi-Xiong;Pang, Dai-Wen;
10:609:7 An autonomous CMOS hysteretic sensor for the detection of desorption-free DNA hybridization
DOI:10.1016/j.bios.2011.04.033 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:4 AU: Lee, Kang-Ho;Choi, Suk-Hwan;Lee, Jeong-Oen;Sohn, Mi-Jin;Yoon, Jun-Bo;Cho, Gyu-Hyeong;
10:609:8 Acoustic wave immunosensing of a meningococcal antigen using gold nanoparticle-enhanced mass sensitivity
DOI:10.1016/j.bios.2011.10.051 JN:BIOSENSORS & BIOELECTRONICS PY:2012
TC:2 AU: Reddy, Sreenivasulu B.;Mainwaring, David E.;Al Kobaisi, Mohammad;Zeephongsekul, Panlop;Fecondo, John V.;
10:610:1 Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films
DOI:10.1039/c2jm32801a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:7 AU: Jiang, Yinzhu;Li, Yong;Yan, Mi;Bahlawane, Naoufal;
10:610:2 Titanium nitride thin film as a novel charge collector in TCO-less dye-sensitized solar cell
DOI:10.1039/c0jm02962a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:18 AU: Yoo, Beomjin;Kim, Kang-Jin;Kim, Yong Hyun;Kim, Kyungkon;Ko, Min Jae;Kim, Won Mok;Park, Nam-Gyu;
10:610:3 Effect of thickness on the structure, composition and properties of titanium nitride nano-coatings
DOI:10.1016/j.ceramint.2013.11.014 JN:CERAMICS INTERNATIONAL PY:2014
TC:6 AU: Martinez, G.;Shutthanandan, V.;Thevuthasan, S.;Chessa, J. F.;Rarnana, C. V.;
10:610:4 Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system
DOI:10.1063/1.3605547 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Sun, Jian;Huang, Yanhua;Gong, Hao;
10:610:5 Fast and efficient hydrogen generation catalyzed by cobalt talc nanolayers dispersed in silica aerogel
DOI:10.1039/c0jm00184h JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:24 AU: Dominguez, Montserrat;Taboada, Elena;Idriss, Hicham;Molins, Elies;Llorca, Jordi;
10:610:6 Titanium nitride thin film as an adhesion layer for surface plasmon resonance sensor chips
DOI:10.1016/j.apsusc.2012.08.093 JN:APPLIED SURFACE SCIENCE PY:2012
TC:8 AU: Kim, W. M.;Kim, S. H.;Lee, K. -S.;Lee, T. S.;Kim, I. H.;
10:610:7 The effect of accessible oxygen over Co3O4-CeO2 catalysts on the steam reforming of ethanol
DOI:10.1016/j.ijhydene.2014.07.139 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:3 AU: Yu, Shen-Wei;Huang, Hsin-Hua;Tang, Chih-Wei;Wang, Chen-Bin;
10:611:1 Synthesis and characterization of spherical amorphous alumo-silicate nanoparticles using RF thermal plasma method
DOI:10.1016/j.jnoncrysol.2012.09.025 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:3 AU: Jankeviciute, Audrone;Karoly, Zoltan;Tarakina, Nadezda V.;Szepvoelgyi, Janos;Kareiva, Aivaras;
10:611:2 Magnetic and luminescent properties of Fe3O4@Y2O3:Eu3+ nanocomposites
DOI:10.1007/s10853-011-5779-y JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:9 AU: Tong, Lizhu;Liu, Deming;Shi, Jianhui;Yang, Xuwei;Yang, Hua;
10:611:3 Fabrication of multilayer glassy ceramic filters by fine particle migration during slip casting
DOI:10.1016/j.ceramint.2009.10.005 JN:CERAMICS INTERNATIONAL PY:2010
TC:3 AU: Ozgur, Cem;San, Osman;
10:611:4 Fabrication of superhydrophilic membrane filters using spherical glass particles obtained by ultrasonic spray pyrolysis
DOI:10.1016/j.ceramint.2010.11.007 JN:CERAMICS INTERNATIONAL PY:2011
TC:4 AU: Ozgur, Cem;San, Osman;
10:611:5 Fabrication of glassy membrane filters and characterization of its hydrophilic nature by thin layer wicking approach
DOI:10.1016/j.ceramint.2011.08.020 JN:CERAMICS INTERNATIONAL PY:2012
TC:1 AU: San, Osman;Ozgur, Cem;Karaguzel, Cengiz;
10:611:6 Preparation, characterization and antimicrobial property of micro-nano sized Na-borosilicate glass powder with spherical shape
DOI:10.1016/j.jnoncrysol.2010.08.014 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:4 AU: Ozgur, Cem;Colak, Ferdag;San, Osman;
10:611:7 Wastewater filtration performance of multilayer glassy microporous filters
DOI:10.1016/j.ceramint.2011.05.148 JN:CERAMICS INTERNATIONAL PY:2011
TC:0 AU: San, Osman;Ozgur, Cem;
10:611:8 Synthesis of Fe3O4@Y2O3:Eu3+ core-shell multifunctional nanoparticles and their magnetic and luminescence properties
DOI:10.1016/j.optmat.2013.04.029 JN:OPTICAL MATERIALS PY:2013
TC:1 AU: Gowd, Genekehal Siddaramana;Patra, Manoj Kumar;Mathew, Manoth;Shukla, Anuj;Songara, Sandhya;Vadera, Sampat Raj;Kumar, Narendra;
10:612:1 Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices
DOI:10.1063/1.4767131 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Garcia Nunez, C.;Pau, J. L.;Ruiz, E.;Piqueras, J.;
10:612:2 On the zinc nitride properties and the unintentional incorporation of oxygen
DOI:10.1016/j.tsf.2011.09.046 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Garcia Nunez, C.;Pau, J. L.;Hernandez, M. J.;Cervera, M.;Ruiz, E.;Piqueras, J.;
10:612:3 An ab initio computational study of pure Zn3N2 and its native point defects and dopants Cu, Ag and Au
DOI:10.1016/j.tsf.2014.05.032 JN:THIN SOLID FILMS PY:2014
TC:2 AU: Jiang, Nanke;Roehl, Jason L.;Khare, Sanjay V.;Georgiev, Daniel G.;Jayatissa, Ahalapitiya H.;
10:612:4 On the true optical properties of zinc nitride
DOI:10.1063/1.3663859 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Garcia Nunez, C.;Pau, J. L.;Hernandez, M. J.;Cervera, M.;Piqueras, J.;
10:612:5 Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films
DOI:10.1016/j.tsf.2011.08.038 JN:THIN SOLID FILMS PY:2012
TC:7 AU: Jiang, Nanke;Georgiev, Daniel G.;Wen, Ting;Jayatissa, Ahalapitiya H.;
10:612:6 Top-gate thin-film transistors based on GaN channel layer
DOI:10.1063/1.3676447 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Chen, Rongsheng;Zhou, Wei;Kwok, Hoi Sing;
10:612:7 Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
DOI:10.1063/1.4884061 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Bolat, S.;Ozgit-Akgun, C.;Tekcan, B.;Biyikli, N.;Okyay, A. K.;
10:612:8 Thermal annealing effect on zinc nitride thin films deposited by reactive rf-magnetron sputtering process
DOI:10.1016/j.mssp.2012.10.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:3 AU: Wen, Ting;Gautam, Madhav;Soleimanpour, Amir M.;Jayatissa, Ahalapitiya H.;
10:612:9 Influence of air exposure on the compositional nature of Zn3N2 thin films
DOI:10.1016/j.tsf.2012.07.002 JN:THIN SOLID FILMS PY:2012
TC:1 AU: Garcia Nunez, C.;Pau, J. L.;Hernandez, M. J.;Cervera, M.;Ruiz, E.;Piqueras, J.;
10:613:1 Evidence for superconductivity at T-c=12 K in oxygen-deficient MoO2-delta and properties of molybdenum arsenide and oxide binaries
DOI:10.1103/PhysRevB.90.054505 JN:PHYSICAL REVIEW B PY:2014
TC:0 AU: Parker, D.;Idrobo, J. C.;Cantoni, C.;Sefat, A. S.;
10:613:2 Superconductivity and magnetism in the KxMoO2-delta
DOI:10.1063/1.4757003 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Alves, L. M. S.;dos Santos, C. A. M.;Benaion, S. S.;Machado, A. J. S.;de Lima, B. S.;Neumeier, J. J.;Marques, M. D. R.;Aguiar, J. Albino;Mossanek, R. J. O.;Abbate, M.;
10:613:3 Phase transitions in K-doped MoO2
DOI:10.1063/1.4879096 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Alves, L. M. S.;de Lima, B. S.;dos Santos, C. A. M.;Rebello, A.;Masunaga, S. H.;Neumeier, J. J.;Leao, J. B.;
10:613:4 Unconventional metallic behavior and superconductivity in the K-Mo-O system
DOI:10.1103/PhysRevB.81.174532 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Alves, L. M. S.;Damasceno, V. I.;dos Santos, C. A. M.;Bortolozo, A. D.;Suzuki, P. A.;Izario Filho, H. J.;Machado, A. J. S.;Fisk, Z.;
10:613:5 Origin of ferromagnetism in molybdenum dioxide from ab initio calculations
DOI:10.1103/PhysRevB.81.012402 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Nisar, Jawad;Peng, Xiangyang;Ahuja, Rajeev;
10:613:6 Metal-insulator transition and superconductivity induced by Rh doping in the binary pnictides RuPn (Pn = P, As, Sb)
DOI:10.1103/PhysRevB.85.140509 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Hirai, Daigorou;Takayama, Tomohiro;Hashizume, Daisuke;Takagi, Hidenori;
10:614:1 Analysis of surface, subsurface, and bulk hydrogen in ZnO using nuclear reaction analysis
DOI:10.1103/PhysRevB.84.075462 JN:PHYSICAL REVIEW B PY:2011
TC:9 AU: Traeger, F.;Kauer, M.;Woell, Ch.;Rogalla, D.;Becker, H. -W.;
10:614:2 Hydrogen-induced disruption of the ZnO(0001) polar surface
DOI:10.1103/PhysRevB.86.035412 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Nishidate, Kazume;Hasegawa, Masayuki;
10:614:3 Interaction of Hydrogen with ZnO: Surface Adsorption versus Bulk Diffusion
DOI:10.1021/la101369r JN:LANGMUIR PY:2010
TC:16 AU: Doh, W. H.;Roy, P. C.;Kim, C. M.;
10:614:4 Synthesis of ZnO nanoparticles with tunable size and surface hydroxylation
DOI:10.1007/s11051-012-1332-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:4 AU: Giang Van Ngo;Margaillan, Andre;Villain, Sylvie;Leroux, Christine;Bressy, Christine;
10:614:5 Comment on "Imaging of the Hydrogen Subsurface Site in Rutile TiO2''
DOI:10.1103/PhysRevLett.104.119603 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:7 AU: Calatayud, M.;Yin, X. -L.;Qiu, H.;Wang, Y.;Birkner, A.;Minot, C.;Woell, Ch.;
10:614:6 Comment on "Imaging of the Hydrogen Subsurface Site in Rutile TiO2'' Reply
DOI:10.1103/PhysRevLett.104.119604 JN:PHYSICAL REVIEW LETTERS PY:2010
TC:4 AU: Enevoldsen, Georg H.;Pinto, Henry P.;Foster, Adam S.;Jensen, Mona C. R.;Hofer, Werner A.;Hammer, Bjork;Lauritsen, Jeppe V.;Besenbacher, Flemming;
10:614:7 Energetics of CO2 and H2O Adsorption on Zinc Oxide
DOI:10.1021/la500743u JN:LANGMUIR PY:2014
TC:4 AU: Gouvea, Douglas;Ushakov, Sergey V.;Navrotsky, Alexandra;
10:615:1 Structural, optical and electrical properties of ternary Al2xIn2-2xO3 films prepared by MOCVD
DOI:10.1016/j.jcrysgro.2015.04.030 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Feng, Xianjin;Zhao, Cansong;Li, Zhao;Ma, Jin;
10:615:2 Ultraviolet-green photoluminescence of beta-Ga2O3 films deposited on MgAl6O10 (100) substrate
DOI:10.1016/j.optmat.2013.07.030 JN:OPTICAL MATERIALS PY:2013
TC:3 AU: Mi, Wei;Luan, Caina;Li, Zhao;Zhao, Cansong;Feng, Xianjin;Ma, Jin;
10:615:3 Enhanced broadband emission from Er-Tm codoped ZnO film due to energy transfer processes involving Si nanocrystals
DOI:10.1063/1.4766348 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Pu, Yu;Xu, Fei;Jiang, Zuimin;Ma, Zhongquan;Lu, Fang;Chen, Dandan;
10:615:4 Scaling-induced enhancement of X-ray luminescence in CsI(Na) crystals
DOI:10.1063/1.4804368 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Liu, Fang;Ouyang, Xiaoping;Tang, Minghua;Xiao, Yongguang;Liu, Bin;Zhang, Xuebin;Feng, Yi;Zhang, Jinping;Liu, Jinliang;
10:615:5 Er3+ related 1.53 mu m emission from Er-Si-codoped ZnO multilayer film prepared by rf-sputtering
DOI:10.1016/j.tsf.2011.01.349 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Wang, Xiao;Xu, Fei;Jiang, Zuimin;Zheng, Lingling;Ma, Zhongquan;Xu, Run;Yu, Bin;Li, Mingzhu;Lu, Fang;
10:615:6 Growth of MgxZn1-xO film by MOCVD equipped laser heating system
DOI:10.1016/j.mseb.2009.12.012 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:7 AU: Ito, Seitaro;Sumiya, Masatomo;Mieno, Masahiro;Koinuma, Hideomi;
10:615:7 Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film
DOI:10.1016/j.2010.06.011 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Mai, Lili;Xu, Fei;Jiang, Zuimin;Ma, Zhongquan;Wang, Xiao;Xu, Run;Fan, Yongliang;Lou, Haonan;Lu, Fang;Zheng, Lingling;
10:615:8 Nanoantenna-like properties of sea-urchin shaped ZnO as a nanolight filter
DOI:10.1063/1.4752467 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Su, Yen Husn;Chen, Wei-Yu;
10:616:1 Growth of ZnO/sapphire heteroepitaxial thin films by radio-frequency sputtering with a raw powder target
DOI:10.1016/j.tsf.2010.03.032 JN:THIN SOLID FILMS PY:2010
TC:13 AU: Seo, S. H.;Kang, H. C.;
10:616:2 Photoluminescence and extinction enhancement from ZnO films embedded with Ag nanoparticles
DOI:10.1063/1.3525171 JN:APPLIED PHYSICS LETTERS PY:2010
TC:13 AU: Liu, M.;Qu, S. W.;Yu, W. W.;Bao, S. Y.;Ma, C. Y.;Zhang, Q. Y.;He, J.;Jiang, J. C.;Meletis, E. I.;Chen, C. L.;
10:616:3 Effect of sputtering pressure on growth behavior of heteroepitaxial ZnO/SrTiO3 (001) films grown by radio frequency magnetron sputtering
DOI:10.1016/j.matlet.2013.01.126 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Seo, S. H.;Kang, H. C.;
10:616:4 Self-assembled ZnO/Ag nanocomposite thin films with enhanced multiple-phonon resonant Raman scattering
DOI:10.1016/j.matlet.2013.10.049 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Liu, Ming;Bao, Shanyong;Yang, Guang;Lu, Lu;Cheng, Shaodong;Qu, Shengwei;Yu, Wenwen;Ma, Chunyu;Zhang, Qingyu;
10:616:5 Effect of ZnO buffer layer thickness on the epitaxial growth of GaN by reactive magnetron sputtering
DOI:10.1016/j.tsf.2013.03.112 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Mohanta, P.;Singh, D.;Kumar, R.;Ganguli, Tapas;Srinivasa, R. S.;Major, S. S.;
10:616:6 Original Supercritical Water Device for Continuous Production of Nanopowders
DOI:10.1002/adem.201000333 JN:ADVANCED ENGINEERING MATERIALS PY:2011
TC:8 AU: Demoisson, Frederic;Ariane, Moustapha;Piolet, Romain;Bernard, Frederic;
10:616:7 Growth behavior and photoluminescence properties of ZnO nanowires on gold nano-particle coated Si surfaces
DOI:10.1016/j.jcrysgro.2011.12.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:2 AU: Nan, Tianxiang;Zeng, Huizhong;Liang, Weizheng;Liu, Shenghua;Wang, Zegao;Huang, Wen;Yang, Weiqing;Chen, Chonglin;Lin, Yuan;
10:616:8 Manipulating and tailoring the properties of 0-D and 1-D nanomaterials
DOI:10.1039/b925007g JN:JOURNAL OF MATERIALS CHEMISTRY PY:2010
TC:5 AU: Pan, Nan;Wang, Bing;Wang, Xiaoping;Hou, J. G.;
10:616:9 Evolution of ZnO nano-crystals grown on a profiled sapphire (0001) substrate with Au nano-crystals
DOI:10.1016/j.tsf.2011.08.072 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Seo, S. H.;Kang, Hyon Chol;
10:617:1 Gd-doped SnO2 nanoparticles: Structure and magnetism
DOI:10.1016/j.jmmm.2010.07.006 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2010
TC:10 AU: Adhikari, R.;Das, A. K.;Karmakar, D.;Ghatak, J.;
10:617:2 Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering
DOI:10.1007/s00339-010-5796-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:9 AU: Qi, Jing;Gao, Daqiang;Liu, Jinhong;Yang, Wenge;Wang, Qi;Zhou, Jinyuan;Yang, Yinghu;Liu, Jianlin;
10:617:3 Long-range ferromagnetic order induced by a donor impurity band exchange in SnO2:Er3+ nanoparticles
DOI:10.1063/1.4833549 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Aragon, F. H.;Chitta, V. A.;Coaquira, J. A. H.;Hidalgo, P.;Brito, H. F.;
10:617:4 Antiferromagnetic interactions in Er-doped SnO2 DMS nanoparticles
DOI:10.1007/s11051-011-0426-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:9 AU: Sambasivam, S.;Joseph, D. Paul;Jeong, Jung Hyun;Choi, Byung Chun;Lim, Kwon Taek;Kim, Sang Su;Song, Tae Kwon;
10:617:5 Doping effects on the structural, magnetic, and hyperfine properties of Gd-doped SnO2 nanoparticles
DOI:10.1007/s11051-014-2689-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2014
TC:0 AU: Coelho-Junior, H.;Aquino, J. C. R.;Aragon, F. H.;Hidalgo, P.;Cohen, R.;Nagamine, L. C. C. M.;Coaquira, J. A. H.;da Silva, S. W.;Brito, H. F.;
10:617:6 Investigations on structural and optical properties of Zn1-xGdxS nanoparticles
DOI:10.1016/j.apsusc.2011.09.001 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Divya, A.;Kumar, K. Siva;Reddy, P. Sreedhara;
10:617:7 Experimental evidences of substitutional solution of Er dopant in Er-doped SnO2 nanoparticles
DOI:10.1007/s11051-012-1343-1 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2013
TC:4 AU: Aragon, F. H.;Coaquira, J. A. H.;Hidalgo, P.;Cohen, R.;Nagamine, L. C. C. M.;da Silva, S. W.;Morais, P. C.;Brito, H. F.;
10:618:1 Visible-light photoresponse of AlN-based film bulk acoustic wave resonator
DOI:10.1063/1.4807135 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Zhou, C. J.;Yang, Y.;Shu, Y.;Cai, H. L.;Ren, T. L.;Chan, M.;Zhou, J.;Jin, H.;Dong, S. R.;Yang, C. Y.;
10:618:2 Strong orange luminescence from AlN whiskers
DOI:10.1016/j.matlet.2012.12.042 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Shen, Longhai;Wang, Nan;Xiao, Xuan;
10:618:3 Combustion synthesis of AIN nanowhiskers with different metallic catalysts
DOI:10.1016/j.matlet.2014.04.147 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Shi, Zhongqi;Zhao, Changjian;Wang, Hailong;Qiao, Guanjun;Wang, Hongjie;
10:618:4 352 nm ultraviolet emission from high-quality crystalline AlN whiskers
DOI:10.1088/0957-4484/21/7/075708 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Liu, Baodan;Bando, Yoshio;Wu, Aimin;Jiang, Xin;Dierre, Benjamin;Sekiguchi, Takashi;Tang, Chengchun;Mitome, Masanori;Golberg, Dmitri;
10:618:5 AlGaN based highly sensitive radio-frequency UV sensor
DOI:10.1063/1.3405692 JN:APPLIED PHYSICS LETTERS PY:2010
TC:5 AU: Chivukula, Venkata;Ciplys, Daumantas;Sereika, Albertas;Shur, Michael;Yang, Jinwei;Gaska, Remis;
10:618:6 Uncooled resonant infrared detector based on aluminum nitride piezoelectric film through charge generations and lattice absorptions
DOI:10.1063/1.4879024 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ang, W. C.;Kropelnicki, P.;Zhu, Y.;Randles, A. B.;Gu, Y. A.;Leong, K. C.;Tan, C. S.;
10:618:7 Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties
DOI:10.1016/j.matlet.2013.06.010 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Shah, Sajjad Hussain;Nabi, Ghulam;Khan, Waheed S.;Majid, Abdul;Cao, Chuanbao;Ali, Safdar;Hussain, Mudassar;Nabi, Azeem;Ishaq, Saadi;Butt, Faheem K.;
10:618:8 Role of Ni in the controlled growth of single crystal AlN triangular microfibers: Morphology evolvement, growth kinetics and photoluminescence
DOI:10.1016/j.jcrysgro.2010.10.092 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Jiang, Liangbao;Zuo, Sibin;Wang, Wenjun;Li, Hui;Jin, Shifeng;Wang, Shunchong;Chen, Xiaolong;
10:618:9 Strong cathodoluminescence of AlN nanowires synthesized by aluminum and nitrogen
DOI:10.1016/j.matlet.2013.10.065 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Li, Chunlei;
10:618:10 ZnO based film bulk acoustic resonator as infrared sensor
DOI:10.1016/j.tsf.2011.03.134 JN:THIN SOLID FILMS PY:2011
TC:4 AU: Wang, Ziyu;Qiu, Xiaotun;Chen, Shih Jui;Pang, Wei;Zhang, Hao;Shi, Jing;Yu, Hongyu;
10:619:1 Hybrid ZnO nanowire networked field-effect transistor with solution-processed InGaZnO film
DOI:10.1063/1.3601466 JN:APPLIED PHYSICS LETTERS PY:2011
TC:5 AU: Yang, Jaehyun;Lee, Myung Soo;Lee, Hoo-Jeong;Kim, Hyoungsub;
10:619:2 Ultraviolet/visible photodiode of nanostructure Sn-doped ZnO/Si heterojunction
DOI:10.1063/1.4804330 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:3 AU: Kheirandish, N.;Mortezaali, A.;
10:619:3 Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires
DOI:10.1088/0957-4484/24/6/065703 JN:NANOTECHNOLOGY PY:2013
TC:3 AU: Kim, Soonjae;Na, Sekwon;Jeon, Haseok;Kim, Sunho;Lee, Byunghoon;Yang, Jaehyun;Kim, Hyoungsub;Lee, Hoo-Jeong;
10:619:4 Influence of Sn Doping on Photoluminescence and Photoelectrochemical Properties of ZnO Nanorod Arrays
DOI:10.1007/s13391-014-3348-7 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:2 AU: Kumar, A. Santhosh;Huang, N. M.;Nagaraja, H. S.;
10:619:5 Effects of the microstructure of ZnO seed layer on the ZnO nanowire density
DOI:10.1557/jmr.2011.81 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:3 AU: Yang, Jaehyun;Lee, Myung Soo;Park, Kyung;Moon, Mi Ran;Jung, Donggeun;Kim, Hyoungsub;Lee, Hoo-Jeong;
10:619:6 A template-free alcoholthermal route to Ti(Sn)-doped ZnO nanorods
DOI:10.1016/j.materresbull.2009.12.034 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:3 AU: Lv, Linlin;Qian, Dong;Mo, Xuesen;Cai, Zhiying;Xv, Xiuhui;Xv, Zhihui;Dai, Yali;
10:619:7 Effect of Seed Layer Structure on Surface Morphology and Photoluminescence Property of ZnO Nanorods Grown on LiNbO3 Substrate
DOI:10.1080/10584587.2013.796240 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Water, Walter;Jhao, Ren-Yang;
10:620:1:1 Fabrication and characteristics of LaB6-doped MgO protective layer for plasma display panels
DOI:10.1016/j.matlet.2014.07.062 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Deng, Jiang;Zeng, Baoqing;Wang, Yi;Wang, Xiaoju;Lin, Zulun;Qi, Kangcheng;Cao, Guichuan;
10:620:1:2 Mechanism of high luminous efficacy in plasma display panel with high secondary electron emission coefficient cathode material analyzed through three-dimensional fluid model simulation
DOI:10.1063/1.3626455 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Kwon, Ohyung;Bae, Hyun Sook;Jung, Hae-Yoon;Lee, Tae-Ho;Cheong, Hee-Woon;Whang, Ki-Woong;
10:620:1:3 Discharge Characteristics of MgO Nano-Powdered Functional Layer in AC-PDP
DOI:10.1080/15421406.2010.499340 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:1 AU: Choi, Eun Ha;Son, Chang Gil;Han, Young Gyu;Kim, In Tae;Park, Byuong Joo;Uhm, Han Sup;Cho, Guangsup;
10:620:2:1 Discharge characteristics of a plasma display panel with hump-shape electrodes
DOI:10.1016/j.tsf.2009.09.175 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Song, In Cheol;Ok, Jung-Woo;Hwang, Seok Won;Lee, Ho-Jun;Park, Chung-Hoo;Lee, Don-Kyu;Lee, Hae June;
10:620:2:2 The effect of electrode tilt angle on the characteristics of coplanar dielectric barrier discharges with Xe-Ne mixtures
DOI:10.1063/1.3606407 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Shim, Seung Bo;Song, In Cheol;Lee, Ho-Jun;Lee, Hae June;
10:620:2:3 The effects of permittivity and thickness of dielectric layers on micro dielectric barrier discharges
DOI:10.1016/j.tsf.2009.10.133 JN:THIN SOLID FILMS PY:2010
TC:5 AU: Shim, Seung Bo;Cho, Sung-Yong;Lee, Don Kyu;Song, In Cheol;Park, Chung Hoo;Lee, Ho-Jun;Lee, Hae June;
10:620:2:4 Simulation studies of the dielectric layer effect on the discharge characteristics of the shadow mask plasma display panel
DOI:10.1116/1.3609249 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:0 AU: Zhang, Panpan;Tu, Yan;Yang, Lanlan;
10:620:2:5 The effects of hump electrode on the long gap plasma display panel with high Xe concentration ratio
DOI:10.1016/j.tsf.2010.03.174 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Ok, Jung-Woo;Song, In-Cheol;Lee, Don-Kyu;Kim, Dong-Hyun;Lee, Hae June;Lee, Ho-Jun;Park, Chung-Hoo;
10:620:3:1 Hydrogen doping of MgO thin films prepared by pulsed laser deposition
DOI:10.1016/j.apsusc.2010.12.006 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Kodu, M.;Aints, M.;Avarmaa, T.;Denks, V.;Feldbach, E.;Jaaniso, R.;Kirm, M.;Maaroos, A.;Raud, J.;
10:620:3:2 Wall charge evolution models and emission of exoelectrons from MgO thin film of ac-PDPs
DOI:10.1063/1.3275869 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Kim, Yong-Seog;Yoon, Sang-Hoon;Yang, Heesun;
10:620:3:3 Epitaxial Thin Films of ATiO(3-x)H(x) (A = Ba, Sr, Ca) with Metallic Conductivity
DOI:10.1021/ja302465c JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2012
TC:8 AU: Yajima, Takeshi;Kitada, Atsushi;Kobayashi, Yoji;Sakaguchi, Tatsunori;Bouilly, Guillaume.;Kasahara, Shigeru;Terashima, Takahito;Takano, Mikio;Kageyama, Hiroshi;
10:620:3:4 Structural and discharging properties of MgO thin films prepared by pulsed laser deposition
DOI:10.1016/j.tsf.2010.08.136 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Kodu, M.;Raud, J.;Aints, M.;Avarmaa, T.;Denks, V.;Choi, J-S;Feldbach, E.;Jaaniso, R.;Kirm, M.;Lee, M-S;Maaroos, A.;Matulevich, Y. T.;Mandar, H.;Sammelselg, V.;
10:621:1 Electrical and optical properties of transparent conducting In4+xSn3-2xSbxO12 thin films
DOI:10.1063/1.3605552 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Kuznetsov, Vladimir L.;O'Neil, David H.;Pepper, Michael;Edwards, Peter P.;
10:621:2 Experimental and density-functional study of the electronic structure of In4Sn3O12
DOI:10.1103/PhysRevB.81.085110 JN:PHYSICAL REVIEW B PY:2010
TC:11 AU: O'Neil, D. H.;Walsh, A.;Jacobs, R. M. J.;Kuznetsov, V. L.;Egdell, R. G.;Edwards, P. P.;
10:621:3 Effect of different sputtering gas mixtures on the structural, electrical, and optical properties of p-type NiO thin films
DOI:10.1016/j.mssp.2012.11.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:1 AU: Oh, Joon-Ho;Hwang, Soon Yong;Kim, Young Dong;Song, Jun-Hyuk;Seong, Tae-Yeon;
10:621:4 Nanostructured nickel oxide ultrafine nanoparticles: Synthesis, characterization, and supercapacitive behavior
DOI:10.1016/j.mssp.2014.02.027 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Barani, Asghar;Aghazadeh, Mustafa;Ganjali, Mohammad Reza;Sabour, Behrouz;Barmi, Abbas-Ali Malek;Dalvand, Somayeh;
10:621:5 Density-Functional Study of the Electronic Structure and Optical Properties of Transparent Conducting Oxides In4Sn3O12 and In4Ge3O12
DOI:10.1007/s11664-011-1642-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:1 AU: Zhang, Yun Geng;Wang, Yuan Xu;
10:621:6 Surface composition and electronic structure of the In(4+x)Sn(3-2x)Sb(x)O(12) (0 <= x <= 1) solid solution
DOI:10.1063/1.3399769 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:1 AU: O'Neil, D. H.;Egdell, R. G.;Edwards, P. P.;
10:621:7 Structural, optical and electrical properties of In4Sn3O12 films prepared by pulsed laser deposition
DOI:10.1016/j.matchemphys.2010.03.075 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:5 AU: O'Neil, David H.;Kuznetsov, Vladimir L.;Jacobs, Robert M. J.;Jones, Martin O.;Edwards, Peter P.;
10:622:1 On the decoration of 3D nickel foam with single crystal ZnO nanorod arrays and their cathodoluminescence study
DOI:10.1016/j.matlet.2012.09.033 JN:MATERIALS LETTERS PY:2013
TC:5 AU: Khan, Yagoob;Hussain, Syed Tajammul;Abbasi, Mazhar Ali;Kall, Per-Olov;Soderlind, Fredrik;
10:622:2 White-light luminescence properties of Mg and Sn doped ZnO prepared by thermal oxidation
DOI:10.1016/j.materresbull.2013.11.007 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Zeng, Jun;Fan, Huiqing;Xue, Jun;Wang, Yangli;
10:622:3 Fabrication and comparative optical characterization of n-ZnO nanostructures (nanowalls, nanorods, nanoflowers and nanotubes)/p-GaN white-light-emitting diodes
DOI:10.1016/j.scriptamat.2010.11.046 JN:SCRIPTA MATERIALIA PY:2011
TC:29 AU: Alvi, N. H.;Ali, S. M. Usman;Hussain, S.;Nur, O.;Willander, M.;
10:622:4 Enhancement of zinc interstitials in ZnO nanotubes grown on glass substrate by the hydrothermal method
DOI:10.1007/s00339-011-6658-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:1 AU: Soomro, M. Y.;Hussain, I.;Bano, N.;Hussain, S.;Nur, O.;Willander, M.;
10:622:5 Growth and optical properties of antimony sulfide decorated ZnO nano-rod heterojunctions
DOI:10.1016/j.matlet.2013.04.009 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Sultan, Muhammad;Khan, Yaqoob;Hussain, Syed Tajammul;Shafiq, Muhammad;
10:622:6 Structural and cathodoluminescence properties of stalactite-like ZnO nanorods fabricated with assistance of Ni-Zn alloy catalyst
DOI:10.1016/j.matlet.2014.07.160 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Wang, Fuxue;Cai, Xiaolong;Gu, Xiaofeng;
10:622:7 Direct observation of enhanced cathodoluminescence emissions from ZnO nanocones compared with ZnO nanowire arrays
DOI:10.1088/0957-4484/22/28/285711 JN:NANOTECHNOLOGY PY:2011
TC:7 AU: Bae, Joonho;Shim, Ee Le;Park, Yeonsang;Kim, Hyunjin;Kim, Jong Min;Kang, C. J.;Choi, Y. J.;
10:622:8 Influence of different growth environments on the luminescence properties of ZnO nanorods grown by the vapor-liquid-solid (VLS) method
DOI:10.1016/j.matlet.2013.04.074 JN:MATERIALS LETTERS PY:2013
TC:2 AU: Alvi, N. H.;ul Hassan, Wasied;Farooq, B.;Nur, O.;Willander, M.;
10:622:9 Attribution of white-light emitting centers with carbonized surface in nano-structured SiO2:C layers
DOI:10.1016/j.tsf.2011.01.199 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Vasin, A. V.;Muto, Sh.;Ishikawa, Yu.;Salonen, J.;Nazarov, A. N.;Lysenko, V. S.;
10:623:1 Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films
DOI:10.1116/1.4870593 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:2 AU: Yildiz, Dilber Esra;Yildirim, Mert;Gokcen, Muharrem;
10:623:2 Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures
DOI:10.1116/1.4900533 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:1 AU: Durmus, Perihan;Yildirim, Mert;
10:623:3 Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperatures
DOI:10.1016/j.mssp.2014.06.047 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Durmus, Perihan;Yildirim, Mert;
10:623:4 Controlling the electrical characteristics of Au/n-Si structures by interfacial insulator layer
DOI:10.1016/j.mssp.2012.02.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:4 AU: Yildirim, M.;Gokcen, M.;
10:623:5 Studies on Optical, Dielectric and Magnetic Properties of Mn2+, Fe3+ & Co2+ Ions Doped LFBCd Glasses
DOI:10.1080/00150193.2012.741987 JN:FERROELECTRICS PY:2012
TC:2 AU: Naresh, V.;Buddhudu, S.;
10:623:6 Structural, thermal, dielectric and ac conductivity properties of lithium fluoro-borate optical glasses
DOI:10.1016/j.ceramint.2011.10.084 JN:CERAMICS INTERNATIONAL PY:2012
TC:4 AU: Naresh, V.;Buddhudu, S.;
10:623:7 Properties of low-temperature passivation of silicon with ALD Al2O3 films and their PV applications
DOI:10.1007/s13391-011-0615-8 JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:5 AU: Kim, Kwang-Ho;Kim, Hyun-Jun;Jang, Pyungwoo;Jung, Chisup;Seomoon, Kyu;
10:624:1 Totally solution-processed ferroelectric-gate thin-film transistor
DOI:10.1063/1.3508958 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Miyasako, Takaaki;Trinh, Bui Nguyen Quoc;Onoue, Masatoshi;Kaneda, Toshihiko;Tue, Phan Trong;Tokumitsu, Eisuke;Shimoda, Tatsuya;
10:624:2 Surface-modified lead-zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors
DOI:10.1007/s00339-013-7971-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:2 AU: Tue Trong Phan;Miyasako, Takaaki;Higashimine, Koichi;Tokumitsu, Eisuke;Shimoda, Tatsuya;
10:624:3 Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3/SiO2/Si Substrates
DOI:10.1111/jace.12066 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:2 AU: Chen, Y. N.;Wang, Z. J.;
10:624:4 Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films
DOI:10.1063/1.3308506 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Masuda, Shin;Seki, Atsushi;Masuda, Yoichiro;
10:624:5 Crystallization kinetics of amorphous lead zirconate titanate thin films in a microwave magnetic field
DOI:10.1016/j.actamat.2014.03.009 JN:ACTA MATERIALIA PY:2014
TC:0 AU: Chen, Y. N.;Wang, Z. J.;Yang, T.;Zhang, Z. D.;
10:624:6 Modeling of multilayer electrode performance in transverse electro-optic modulators
DOI:10.1063/1.3668284 JN:AIP ADVANCES PY:2011
TC:2 AU: Zhu, Minmin;Chen, Xiliang;Du, Zehui;Ma, Jan;
10:624:7 Crystallization of Ferroelectric Lead Zirconate Titanate Thin Films by Microwave Annealing at Low Temperatures
DOI:10.1111/j.1551-2916.2010.04094.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:6 AU: Wang, Zhanjie;Chen, Yanna;Otsuka, Yuka;Zhu, Mingwei;Cao, Ziping;Kokawa, Hiroyuki;
10:624:8 Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors
DOI:10.1080/00150193.2010.483398 JN:FERROELECTRICS PY:2010
TC:5 AU: Tue, Phan Trong;Miyasako, Takaaki;Trinh, Bui Nguyen Quoc;Li, Jinwang;Tokumitsu, Eisuke;Shimoda, Tatsuya;
10:624:9 Electro-optic and dielectric characterization of ferroelectric films for high-speed optical waveguide modulators
DOI:10.1063/1.3598107 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Masuda, Shin;Seki, Atsushi;Shiota, Kazunori;Hara, Hideo;Masuda, Yoichiro;
10:625:1 Photoluminescence study of ZnO nanostructures grown on silicon by MOCVD
DOI:10.1016/j.mseb.2012.03.008 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2012
TC:9 AU: Biethan, J. -P.;Sirkeli, V. P.;Considine, L.;Nedeoglo, D. D.;Pavlidis, D.;Hartnagel, H. L.;
10:625:2 Fabrication and photoluminescence of caltrop-like ZnO nanostructures on silicon substrate
DOI:10.1016/j.matlet.2013.09.016 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Wang, Fuxue;Cai, Xiaolong;Yan, Dawei;Zhu, Zhaomin;Gu, Xiaofeng;
10:625:3 Fabrication and characterization of novel ZnO tetrapods induced by polar surfaces
DOI:10.1016/j.matlet.2011.01.085 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Li, Junlin;Zhuang, Huizhao;Wang, Jie;Xu, Peng;
10:625:4 Synthesis and cathode luminescence properties of ZnO multipod nanoneedles
DOI:10.1016/j.matlet.2011.09.063 JN:MATERIALS LETTERS PY:2012
TC:2 AU: Hong, Kunquan;Song, Rui;Liu, Liqing;Xu, Mingxiang;
10:625:5 Morphology-controlled growth of tetrapod ZnO nanostructures by direct arc discharge
DOI:10.1007/s00339-010-5600-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:3 AU: Yang, S. L.;Gao, R. S.;Yang, B.;Niu, P. L.;Yu, R. H.;
10:625:6 Effect of the O-2/N-2 ratio on the morphology of ZnO nanostructures grown by a thermal evaporation technique
DOI:10.1016/j.ceramint.2013.03.065 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Lee, Geun-Hyoung;
10:625:7 In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring
DOI:10.1007/s11664-011-1515-2 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2011
TC:1 AU: Biethan, J. -P.;Considine, L.;Pavlidis, D.;
10:625:8 Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water
DOI:10.1016/j.jcrysgro.2009.11.041 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:3 AU: Nishiyama, Hiroshi;Miura, Hitoshi;Yasui, Kanji;Inoue, Yasunobu;
10:625:9 Novel zinc oxide hexagonal prisms induced by polar surfaces
DOI:10.1016/j.matchar.2011.03.015 JN:MATERIALS CHARACTERIZATION PY:2011
TC:7 AU: Zhuang, Huizhao;Li, Junlin;Wang, Jie;Xu, Peng;An, Ning;
10:626:1 The influence of methanol addition during the film growth of SnO2 by atmospheric pressure chemical vapor deposition
DOI:10.1016/j.tsf.2011.03.125 JN:THIN SOLID FILMS PY:2011
TC:16 AU: Volintiru, I.;de Graaf, A.;van Deelen, J.;Poodt, P.;
10:626:2 X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes
DOI:10.1116/1.4756898 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:4 AU: Mannie, Gilbere J. A.;Gerritsen, Gijsbert;Abbenhuis, Hendrikus C. L.;van Deelen, Joop;Niemantsverdriet, J. W. Hans;Thune, Peter C.;
10:626:3 Transmission electron microscopy of transparent conductive oxide films made by atmospheric pressure chemical vapor deposition
DOI:10.1063/1.3551523 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Mannie, G. J. A.;van Deelen, J.;Niemantsverdriet, J. W.;Thune, P. C.;
10:626:4 Transmission electron microscopy on early-stage tin oxide film morphology grown by atmospheric pressure chemical vapor deposition
DOI:10.1016/j.apsusc.2014.05.024 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Mannie, Gilbere J. A.;van Deelen, Joop;Niemantsverdriet, J. W. (Hans);Thune, Peter C.;
10:626:5 In Situ ATR-FTIR Studies on MgCl2-Diisobutyl Phthalate Interactions in Thin Film Ziegler-Natta Catalysts
DOI:10.1021/la203972k JN:LANGMUIR PY:2012
TC:11 AU: Cheruvathur, Ajin V.;Langner, Ernie H. G.;Niemantsverdriet, J. W. (Hans);Thune, Peter C.;
10:626:6 Ziegler-Natta catalysis: Forever young
DOI:10.1557/mrs.2013.50 JN:MRS BULLETIN PY:2013
TC:2 AU: Busico, Vincenzo;
10:626:7 Structure-Activity Relationship in Olefin Polymerization Catalysis: Is Entropy the Key?
DOI:10.1021/ja105965x JN:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY PY:2010
TC:13 AU: Ciancaleoni, Gianluca;Fraldi, Natascia;Budzelaar, Peter H. M.;Busico, Vincenzo;Cipullo, Roberta;Macchioni, Alceo;
10:627:1 Fabrication of hybrid solar cells using poly(2,5-dimethoxyaniline) hexagonal structures and zinc oxide nanorods
DOI:10.1007/s10853-012-6435-x JN:JOURNAL OF MATERIALS SCIENCE PY:2012
TC:4 AU: Mavundla, S. E.;Malgas, G. F.;Motaung, D. E.;Iwuoha, E. I.;
10:627:2 Hybrid photovoltaic devices from regioregular polythiophene and ZnO nanoparticles composites
DOI:10.1016/j.renene.2010.04.014 JN:RENEWABLE ENERGY PY:2010
TC:15 AU: Das, Narayan Ch;Sokol, Paul E.;
10:627:3 The effect of metal layers on the morphology and optical properties of hydrothermally grown zinc oxide nanowires
DOI:10.1007/s10853-013-7271-3 JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:2 AU: Brown, Richard A.;Evans, Jon E.;Smith, Nathan A.;Tarat, Afshin;Jones, Daniel R.;Barnett, Chris J.;Maffeis, Thierry G. G.;
10:627:4 Comparison of ZnO nanowires synthesized on various surfaces on a single substrate
DOI:10.1016/j.matlet.2011.12.001 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Chew, Zheng J.;Brown, Richard A.;Maffeis, Thierry G. G.;Li, Lijie;
10:627:5 Further optical properties of CdX (X = S, Te) compounds under quantum dot diameter effect: Ab initio method
DOI:10.1016/j.renene.2012.02.020 JN:RENEWABLE ENERGY PY:2012
TC:7 AU: Al-Douri, Y.;Baaziz, H.;Charifi, Z.;Khenata, R.;Hashim, U.;Al-Jassim, M.;
10:627:6 Physicochemical and morphological properties of poly(aniline-co-pyrrole)
DOI:10.1007/s10853-010-4351-5 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:14 AU: Mavundla, Sipho E.;Malgas, Gerald F.;Motaung, David E.;Iwuoha, Emmanuel I.;
10:628:1 In-situ energy dispersive x-ray diffraction study of the growth of CuO nanowires by annealing method
DOI:10.1063/1.4824177 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Srivastava, Himanshu;Ganguli, Tapas;Deb, S. K.;Sant, Tushar;Poswal, H. K.;Sharma, Surinder M.;
10:628:2 Dependence of degree of orientation of copper oxide nuclei on oxygen pressure during initial stages of copper oxidation
DOI:10.1103/PhysRevB.83.155418 JN:PHYSICAL REVIEW B PY:2011
TC:7 AU: Luo, Langli;Kang, Yihong;Liu, Zhenyu;Yang, Judith C.;Zhou, Guangwen;
10:628:3 A comparative study on the growth of ZnO nanorods by annealing method in different environments
DOI:10.1016/j.jallcom.2014.05.057 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Tiwari, Pragya;Srivastava, Himanshu;Srivastava, A. K.;Deb, S. K.;
10:628:4 Nucleation-induced kinetic hindrance to the oxide formation during the initial oxidation of metals
DOI:10.1103/PhysRevB.81.195440 JN:PHYSICAL REVIEW B PY:2010
TC:5 AU: Zhou, Guangwen;
10:628:5 Effect of substrate texture on the growth of hematite nanowires
DOI:10.1016/j.apsusc.2011.08.082 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Srivastava, Himanshu;Tiwari, Pragya;Srivastava, A. K.;Rai, Sanjay;Ganguli, Tapas;Deb, S. K.;
10:628:6 Effect of gold composition on the orientations of oxide nuclei during the early stage oxidation of Cu-Au alloys
DOI:10.1063/1.4707929 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:4 AU: Luo, Langli;Kang, Yihong;Yang, Judith C.;Zhou, Guangwen;
10:628:7 Metastable surface oxide on CoGa(100): Structure and stability
DOI:10.1103/PhysRevB.81.115402 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Vlad, A.;Stierle, A.;Marsman, M.;Kresse, G.;Costina, I.;Dosch, H.;Schmid, M.;Varga, P.;
10:628:8 Growth behavior and field-induced diffusion of Ni clusters/particles on SrTiO3 (001) observed by UHV-TEM/STM
DOI:10.1007/s00339-013-7690-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Tanaka, Miyoko;
10:629:1 Synthesis and characterization of ferromagnetic Zn1-xCoxO films
DOI:10.1016/j.jcrysgro.2012.02.022 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:7 AU: Seo, S. -Y.;Kwak, C. -H.;Kim, S. -H.;Park, S. -H.;Lee, I. -J.;Han, S. W.;
10:629:2 Local structural, magnetic, and optical properties of Zn1-xFexO thin films
DOI:10.1016/j.jcrysgro.2010.04.033 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Seo, S. -Y.;Kwak, C. -H.;Kim, S. -H.;Kim, B. -H.;Park, C. -I.;Park, S. -H.;Han, S. -W.;
10:629:3 Influence of growth temperature of TiO2 buffer on structure and PL properties of ZnO films
DOI:10.1016/j.apsusc.2009.12.064 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Zhang, Weiying;Zhao, Jianguo;Liu, Zhenzhong;Liu, Zhaojun;Fu, Zhuxi;
10:629:4 The evolution behavior of microstructures and optical properties of ZnO films using a Ti buffer layer
DOI:10.1016/j.ceramint.2013.03.066 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Zhang, Xiaolei;Ma, Shuyi;Yang, Fuchao;Zhao, Qiang;Li, Faming;Liu, Jing;
10:629:5 Structure, microstructure and determination of optical constants from transmittance data of co-doped Zn0.90Co0.05M0.05O (M=Al, Cu, Cd, Na) films
DOI:10.1016/j.jallcom.2014.02.080 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Roguai, S.;Djelloul, A.;Nouveau, Corinne;Souier, T.;Dakhel, A. A.;Bououdina, M.;
10:629:6 Ferromagnetism in ZnCoO thin films deposited by PLD
DOI:10.1007/s00339-010-5928-1 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:6 AU: Karamat, S.;Rawat, R. S.;Tan, T. L.;Lee, P.;Chen, R.;Sun, H. D.;Zhou, W.;
10:629:7 Improvement in crystalline quality and surface smoothness of ZnO film by multi-step deposition process
DOI:10.1016/j.apsusc.2010.11.038 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Lee, Geun-Hyoung;
10:629:8 Synthesis and microstructural properties of ZnO nanorods on Ti-buffer layers
DOI:10.1016/j.jcrysgro.2010.10.066 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Kwak, C. -H.;Kim, B. -H.;Park, C. -I.;Seo, S. -Y.;Kim, S. -H.;Han, S. -W.;
10:630:1 Oriented ZnO nanotubes arrays decorated with TiO2 nanoparticles for dye-sensitized solar cell applications
DOI:10.1007/s00339-013-7823-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:4 AU: Yang, Jiyuan;Lin, Yu;Meng, Yongming;Lin, Yibing;
10:630:2 Highly efficient nanocrystalline ZnO thin films prepared by a novel method and their application in dye-sensitized solar cells
DOI:10.1007/s00339-012-7089-x JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:7 AU: Bahadur, Lal;Kushwaha, Suman;
10:630:3 Effects of preannealing temperature of ZnO thin films on the performance of dye-sensitized solar cells
DOI:10.1007/s00339-009-5467-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:14 AU: Kao, M. C.;Chen, H. Z.;Young, S. L.;
10:630:4 Synthesis of self-light-scattering wrinkle structured ZnO photoanode by sol-gel method for dye-sensitized solar cells
DOI:10.1007/s00339-013-8164-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:1 AU: Raj, C. Justin;Karthick, S. N.;Hemalatha, K. V.;Kim, Soo-Kyoung;Kim, Byung Chul;Yu, Kook-Hyun;Kim, Hee-Je;
10:630:5 Influence of seed layer treatment on ZnO growth morphology and their device performance in dye-sensitized solar cells
DOI:10.1016/j.mseb.2010.05.032 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:9 AU: Kumar, R. Saravana;Sudhagar, P.;Matheswaran, P.;Sathyamoorthy, R.;Kang, Yong Soo;
10:630:6 The influence of different electrodeposition E/t programs photoelectrochemical properties of alpha-Fe2O3 thin films
DOI:10.1016/j.tsf.2010.06.065 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Schrebler, Ricardo S.;Altamirano, Hernan;Grez, Paula;Herrera, Francisco V.;Munoz, Eduardo C.;Ballesteros, Luis A.;Cordova, Ricardo A.;Gomez, Humberto;Dalchiele, Enrique A.;
10:631:1 Functional Ultrathin Films and Nanolaminates from Aqueous Solutions
DOI:10.1021/cm303268p JN:CHEMISTRY OF MATERIALS PY:2013
TC:5 AU: Jiang, Kai;Meyers, Stephen T.;Anderson, Michael D.;Johnson, David C.;Keszler, Douglas A.;
10:631:2 All-inorganic thermal nanoimprint process
DOI:10.1116/1.3463454 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:10 AU: Weiss, Dirk N.;Meyers, Stephen T.;Keszler, Douglas A.;
10:631:3 Nanoimprinting for diffractive light trapping in solar cells
DOI:10.1116/1.3498754 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:6 AU: Weiss, Dirk N.;Yuan, Hao-Chih;Lee, Benjamin G.;Branz, Howard M.;Meyers, Stephen T.;Grenville, Andrew;Keszler, Douglas A.;
10:631:4 Thermal conductivity and refractive index of hafnia-alumina nanolaminates
DOI:10.1063/1.3626462 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Gabriel, Nicholas T.;Talghader, Joseph J.;
10:631:5 Thermal conductivity of amorphous thin-film Al-P-O on silicon
DOI:10.1016/j.tsf.2013.09.085 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Wiedle, River A.;Warner, Mark;Tate, Janet;Plassmeyer, Paul N.;Page, Catherine J.;
10:631:6 Photopatternable inorganic hardmask
DOI:10.1116/1.3507889 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:2 AU: Telecky, Alan;Xie, Peng;Stowers, Jason;Grenville, Andrew;Smith, Bruce;Keszler, Douglas A.;
10:631:7 Impact of Thermal Radiation on the Performance of Ultrasmall Microcoolers
DOI:10.1007/s11664-012-2453-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:1 AU: Shea, Ryan P.;Gawarikar, Anand S.;Talghader, Joseph J.;
10:632:1 Unified calculations of optical and EPR spectral data for two tetragonal Cu2+ centers in Cu2+-doped ZnO nanocrystals
DOI:10.1016/j.optmat.2013.10.026 JN:OPTICAL MATERIALS PY:2013
TC:6 AU: Mei, Yang;Zheng, Wen-Chen;Zhang, Lin;
10:632:2 Studies on the spin-Hamiltonian parameters of two Cu2+ centers and their defect structures due to Jahn-Teller effect for Cu2+-doped ZnGa2O4 spinel
DOI:10.1080/14786435.2011.634844 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:9 AU: Zheng, W. C.;Mei, Y.;Yang, Y. G.;Liu, H. G.;
10:632:3 Investigations of the spin-Hamiltonian parameters and tetragonal distortions due to Jahn-Teller effect for the monovalent d(9) (Ni+, Pd+, Pt+) impurity centers in AgCl crystals
DOI:10.1016/j.jallcom.2010.07.217 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Feng Wen-Lin;Yang Wei-Qing;Zheng Wen-Chen;Li Xue-Ming;
10:632:4 EPR and optical absorption studies of Cu2+ ions doped magnesium citrate decahydrate single crystals
DOI:10.1016/j.jallcom.2010.03.126 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Dwivedi, Prashant;Kripal, Ram;Misra, Madan Gopal;
10:632:5 Theoretical studies of the spin Hamiltonian parameters and local structures for the tetragonal Cu2+ and Ni3+ centers in Mg2TiO4
DOI:10.1016/j.jallcom.2012.09.078 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:3 AU: Zhang, Hua-Ming;Wan, Xiong;Zhang, Zhi-Ming;
10:632:6 Studies of the g factors for the tetragonally elongated and compressed CuIIN6 octahedra in [image omitted] (MI = K, Rb, Cs; MII = Ca, Sr, Ba, Pb) crystals
DOI:10.1080/14786430903459683 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:8 AU: Zheng, W. C.;Mei, Y.;He, L.;
10:632:7 Theoretical investigation for the EPR g factors and the local structure for the two tetragonal Ni3+ centers in ACoO(2) (A = H, Li)
DOI:10.1016/j.jallcom.2013.08.185 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:2 AU: Zhang, Hua-Ming;Xiao, Wen-Bo;Wan, Xiong;
10:632:8 Theoretical studies of spin Hamiltonian parameters for the tetragonally elongated Cu2+ centers in ARbB(4)O(7) (A = Li, Na, K) glasses
DOI:10.1016/j.jnoncrysol.2012.10.019 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2013
TC:9 AU: Zhang, Hua-Ming;Wan, Xiong;
10:632:9 Theoretical calculations of spin-Hamiltonian parameters for the square planar Pd+ clusters in the -irradiated A(2)PdCl(4) (A=K, NH4) crystals
DOI:10.1080/14786435.2013.817694 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:2 AU: Feng, W. L.;Zheng, W. C.;
10:633:1 Investigation on electronic transitions in Co-doped ZnO by surface photovoltage spectra
DOI:10.1007/s00339-014-8535-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Guo, Shuxia;Guo, Huifen;Du, Zuliang;
10:633:2 The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors
DOI:10.1063/1.3437082 JN:APPLIED PHYSICS LETTERS PY:2010
TC:15 AU: Shi, Tongfei;Xiao, Zhenguo;Yin, Zhijun;Li, Xinhua;Wang, Yuqi;He, Hongtao;Wang, Jiannong;Yan, Wenshen;Wei, Shiqiang;
10:633:3 Observation of the defect states in individual Co-doped ZnO dilute magnetic semiconducting nanostructures by electron energy-loss spectroscopy
DOI:10.1016/j.scriptamat.2013.04.016 JN:SCRIPTA MATERIALIA PY:2013
TC:1 AU: Zhang, Z. H.;Tao, H. L.;Pan, L. L.;Gu, Lin;He, M.;Song, B.;Li, Q.;
10:633:4 Magnetic and electronic characterization of highly Co-doped ZnO: An annealing study at the solubility limit
DOI:10.1103/PhysRevB.82.094438 JN:PHYSICAL REVIEW B PY:2010
TC:13 AU: Knut, R.;Wikberg, J. M.;Lashgari, K.;Coleman, V. A.;Westin, G.;Svedlindh, P.;Karis, O.;
10:633:5 Determinant influence of surfaces on the Co clustering trend at ZnO
DOI:10.1063/1.3650247 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Sanchez, N.;Gallego, S.;Munoz, M. C.;
10:633:6 Annealing effects on structural and magnetic properties of Co implanted ZnO single crystals
DOI:10.1063/1.3559263 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Wikberg, J. M.;Knut, R.;Audren, A.;Ottosson, M.;Linnarsson, M. K.;Karis, O.;Hallen, A.;Svedlindh, P.;
10:633:7 Investigating the ferromagnetic exchange interaction in Co-doped ZnO magnetic semiconductors
DOI:10.1016/j.scriptamat.2011.01.018 JN:SCRIPTA MATERIALIA PY:2011
TC:4 AU: Hu, Shu-jun;Yan, Shi-shen;Zhao, Ming-wen;Lin, Xue-ling;Yao, Xin-xin;Han, Chong;Tian, Yu-feng;Chen, Yan-xue;Liu, Guo-lei;Mei, Liang-mo;
10:634:1 Synthesis of neodymium doped yttria nanopowders by microwave-assisted glycine combustion method and the powder characteristics
DOI:10.1016/j.ceramint.2013.10.073 JN:CERAMICS INTERNATIONAL PY:2014
TC:0 AU: Wang, Nengli;Zhang, Xiyan;Bai, Zhaohui;
10:634:2 Enhanced density of sol-gel derived La0.8S0.2MnO3 thin film with an electric field assisted deposition
DOI:10.1016/j.matlet.2012.10.107 JN:MATERIALS LETTERS PY:2013
TC:0 AU: Zhu, Xingbao;Lu, Zhe;Wei, Bo;Ding, Dong;Liu, Mingfei;Liu, Meilin;
10:634:3 Synthesis of doped ZnO nanopowders in alcohol-water solvent for varistors applications
DOI:10.1016/j.matlet2014.01.161 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Wang, Mao-Hua;Ma, Xiao-Yu;Jiang, Wen;Zhou, Fu;
10:634:4 Synthesis of Nd:Y2O3 nanopowders leading to transparent ceramics
DOI:10.1016/j.matchemphys.2011.02.006 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Huang, Zhi;Guo, Wang;Liu, Yuan;Huang, Qiufeng;Tang, Fei;Cao, Yongge;
10:634:5 Effect of complexing agents on the powder characteristics and sinterability of neodymium doped yttria nanoparticles
DOI:10.1016/j.powtec.2012.06.021 JN:POWDER TECHNOLOGY PY:2012
TC:5 AU: Laishram, Kiranmala;Mann, Rekha;Malhan, Neelam;
10:634:6 Growth and characterization of La0.85Sr0.15MnO3 thin films for fuel cell applications
DOI:10.1016/j.apsusc.2012.02.119 JN:APPLIED SURFACE SCIENCE PY:2012
TC:3 AU: Zhang, Dongbo;Yang, Lei;Liu, Ze;Blinn, Kevin;Lee, Jae-Wung;Liu, Meilin;
10:634:7 Synthesis of mono-dispersed spherical Nd:Y2O3 powder for transparent ceramics
DOI:10.1016/j.ceramint.2011.06.008 JN:CERAMICS INTERNATIONAL PY:2011
TC:4 AU: Huang, Yihua;Jiang, Dongliang;Zhang, Jingxian;Lin, Qingling;Huang, Zhengren;
10:634:8 Synthesis and Physicochemical Properties of Yttrium Oxide Doped with Neodymium and Lanthanum
DOI:10.1007/s11664-014-3250-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:0 AU: Kruk, A.;Mrozek, M.;Domagaia, J.;Brylewski, T.;Gawlik, W.;
10:634:9 Fundamental optical constants of Nd-doped Y2O3 ceramic and its scintillation characteristics
DOI:10.1016/j.optmat.2011.03.048 JN:OPTICAL MATERIALS PY:2011
TC:3 AU: Fukabori, Akihiro;Chani, Valery;Pejchal, Jan;Kamada, Kei;Yoshikawa, Akira;Ikegami, Takayasu;
10:634:10 Preparation of La0.1Nd0.1Y1.8O3 nanopowders and characterizations of the optical properties
DOI:10.1016/j.matchemphys.2012.05.028 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:2 AU: Dong, L. M.;Han, Z. D.;Wu, Z.;Zhang, X. Y.;
10:635:1 Polarity driven morphology of zinc oxide nanostructures
DOI:10.1063/1.4820410 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Kaebisch, S.;Gluba, M. A.;Klimm, C.;Krause, S.;Koch, N.;Nickel, N. H.;
10:635:2 Zinc oxide films grown by galvanic deposition from 99% metals basis zinc nitrate electrolyte
DOI:10.1039/c4ta01476f JN:JOURNAL OF MATERIALS CHEMISTRY A PY:2014
TC:0 AU: Calnan, S.;Riedel, W.;Gledhill, S.;Stannowski, B.;Schlatmann, R.;Lux-Steiner, M. Ch.;
10:635:3 Spectroscopic investigations on Eu3+ ions in Li-K-Zn fluorotellurite glasses
DOI:10.1016/j.optmat.2014.07.021 JN:OPTICAL MATERIALS PY:2014
TC:0 AU: Joseph, Xavier;George, Rani;Thomas, Sunil;Gopinath, Manju;Sajna, M. S.;Unnikrishnan, N. V.;
10:635:4 Raman studies and some physical properties of selected (PbO)(x)(Nb2O5)(y)(TeO2)(1-x-y) glasses
DOI:10.1016/j.optmat.2010.01.031 JN:OPTICAL MATERIALS PY:2010
TC:10 AU: Ozdanova, Jitka;Ticha, Helena;Tichy, Ladislav;
10:635:5 Interstitial zinc clusters in zinc oxide
DOI:10.1103/PhysRevB.88.245201 JN:Algarabel, Pedro/K-8583-2014; Ibarra, Manuel Ricardo/K-1150-2014; Rodriguez Fernandez, Jesus/L-7960-2014;Morellon, Luis/0000-0003-3724-508X; Marcano Aguado,;Noelia/0000-0002-5331-9758; PY:100 TC:arabel, Pedro/0000-0002-4698-3378;;Ibarra, Manuel Ricardo/0000-0003-0681-8260;;0;0;0;0;0;1098-0121;WOS:000332161300004;;;J;Minar, Jiri;Gremaud, Benoit;From antiferromagnetic ordering to magnetic textures in the;two-dimensional Fermi-Hubbard model with synthetic spin-orbit;interactions;PHYSICAL REVIEW B;88;23;235130;10.1103/PhysRevB.88.235130;DEC 30 2013;2013;We study the interacting Fermi-Hubbard model in two spatial dimensions;with synthetic gauge coupling of the spin-orbit Rashba type, at;half-filling. Using real-space mean-field theory, we numerically;determine the phase as a function of the interaction strength for;different values of the gauge-field parameter. For a fixed value of the;gauge field, we observe that when the strength of the repulsive;interaction is increased, the system enters into an antiferromagnetic;phase, then undergoes a first-order phase transition to a noncollinear;magnetic phase. Depending on the gauge-field parameter, this phase;further evolves to the one predicted from the effective Heisenberg model;obtained in the limit of large interaction strength. We explain the;presence of the antiferromagnetic phase at small interaction from the;computation of the spin-spin susceptibility, which displays a divergence;at low temperatures for the antiferromagnetic ordering. We discuss, how;the divergence is related to the nature of the underlying Fermi;surfaces. Finally, the fact that the first-order phase transitions for;different gauge-field parameters occur at unrelated critical interaction;strengths arises from a Hofstadter-like situation, i.e., for different;magnetic phases, the mean-field Hamiltonians have different;translational symmetries.;1;0;0;0;1;1098-0121;WOS:000332163500001;;;J;Rochal, S. B.;Lorman, V. L.;Yuzyuk, Yu. I.;Two-dimensional elasticity determines the low-frequency dynamics of;single-and double-walled carbon nanotubes;PHYSICAL REVIEW B;88;23;235435;10.1103/PhysRevB.88.235435;DEC 30 2013;2013;We develop a continuous theory of low-frequency dynamics for nanotubes;with walls constituted by singleatom monolayer, the topological;elasticity of which is not related to its vanishing macroscopic;thickness. The applicability region of the theory proposed includes all;truly two-dimensional materials such as graphene and MoS2. New;comprehensive interpretation and analytical expressions for;low-frequency modes in single-walled carbon nanotube (SWCNT) are given.;The theory unambiguously relates the radial breathing modes of SWCNT and;breathinglike modes of the double-walled carbon nanotube (DWCNT). The;existing Raman data on DWCNTs are fitted better than in the frame of;previous models.;Yuzyuk, Yuri/A-1285-2009;0;0;0;0;0;1098-0121;WOS:000332163500006;;;J;Wagner, Markus R.;Callsen, Gordon;Reparaz, Juan S.;Kirste, Ronny;Hoffmann, Axel;Rodina, Anna V.;Schleife, Andre;Bechstedt, Friedhelm;Phillips, Matthew R.;Effects of strain on the valence band structure and exciton-polariton;energies in ZnO;PHYSICAL REVIEW B;88;23;235210;10.1103/PhysRevB.88.235210;DEC 30 2013;2013;The uniaxial stress dependence of the band structure and the;exciton-polariton transitions in wurtzite ZnO is thoroughly studied;using modern first-principles calculations based on the HSE+ G(0)W(0);approach, k center dot p modeling using the deformation potential;framework, and polarized photoluminescence measurements. The ordering of;the valence bands [A(Gamma(7)), B(Gamma(9)), C(Gamma(7))] is found to be;robust even for high uniaxial and biaxial strains. Theoretical results;for the uniaxial pressure coefficients and splitting rates of the A, B,;and C valence bands and their optical transitions are obtained including;the effects of the spin-orbit interaction. The excitonic deformation;potentials are derived and the stress rates for hydrostatic pressure are;determined based on the results for uniaxial and biaxial stress. In;addition, the theory for the stress dependence of the exchange;interaction and longitudinal-transversal splitting of the exciton;polaritons is developed using the basic exciton functions of the;quasicubic approximation and taking the interaction between all exciton;states into account. It is shown that the consideration of these effects;is crucial for an accurate description of the stress dependence of the;optical spectra in ZnO. The theoretical results are compared to;polarized photoluminescence measurements of different ZnO substrates as;function of uniaxial pressure and experimental values reported in the;literature demonstrating an excellent agreement with the computed;pressure coefficients.;Wagner, Markus/A-3582-2009;Wagner, Markus/0000-0002-7367-5629;3;0;1;0;3;1098-0121;WOS:000332163500004;;;J;Zhang, Jian-Min;Ming, Wenmei;Huang, Zhigao;Liu, Gui-Bin;Kou, Xufeng;Fan, Yabin;Wang, Kang L.;Yao, Yugui;Stability, electronic, and magnetic properties of the magnetically doped;topological insulators Bi2Se3, Bi2Te3, and Sb2Te3;PHYSICAL REVIEW B;88;23;235131;10.1103/PhysRevB.88.235131;DEC 30 2013;2013;Magnetic interaction with the gapless surface states in a topological;insulator (TI) has been predicted to give rise to a few exotic quantum;phenomena. However, the effective magnetic doping of TI is still;challenging in the experiment. Using first-principles calculations, the;magnetic doping properties (V, Cr, Mn, and Fe) in three strong TIs;(Bi2Se3, Bi2Te3, and Sb2Te3) are investigated. We find that for all;three TIs the cation-site substitutional doping is most energetically;favorable with the anion-rich environment as the optimal growth;condition. Further, our results show that under the nominal doping;concentration of 4%, Cr- and Fe-doped Bi2Se3, Bi2Te3, and Cr-doped;Sb2Te3 remain as insulators, while all the V-and Mn-doped TIs, and;Fe-doped Sb2Te3 become metal. We also show that the magnetic interaction;of Cr-doped Bi2Se3 tends to be ferromagnetic, while Fe-doped Bi2Se3 is;likely to be antiferromagnetic. Finally, we estimate the magnetic;coupling and the Curie temperature for the promising ferromagnetic;insulator (Cr-doped Bi2Se3) by Monte Carlo simulation. These findings;may provide important guidance for the magnetism incorporation in TIs;experimentally.;Yao, Yugui/A-8411-2012; Liu, Gui-Bin/A-2724-2009; Zhang, Jian-Min/A-7757-2012;Liu, Gui-Bin/0000-0001-5935-7555;;4;0;0;0;4;1098-0121;WOS:000332163500002;;;J;Zitko, R.;Hansen, D.;Perepelitsky, E.;Mravlje, J.;Georges, A.;Shastry, B. S.;Extremely correlated Fermi liquid theory meets dynamical mean-field;theory: Analytical insights into the doping-driven Mott transition;PHYSICAL REVIEW B;88;23;235132;10.1103/PhysRevB.88.235132;DEC 30 2013;2013;We consider a doped Mott insulator in the large dimensionality limit;within both the recently developed extremely correlated Fermi liquid;(ECFL) theory and the dynamical mean-field theory (DMFT). We show that;the general structure of the ECFL sheds light on the rich frequency;dependence of the DMFT self-energy. Using the leading Fermi liquid form;of the two key auxiliary functions introduced in the ECFL theory, we;obtain an analytical ansatz, which provides a good quantitative;description of the DMFT self-energy down to hole doping level delta;similar or equal to 0.2. In particular, the deviation from Fermi liquid;behavior and the corresponding particle-hole asymmetry developing at a;low-energy scale are well reproduced by this ansatz. The DMFT being;exact at large dimensionality, our study also provides a benchmark of;the ECFL in this limit. We find that the main features of the;self-energy and spectral line shape are well reproduced by the ECFL;calculations in the O(lambda(2)) minimal scheme, for not too low doping;level delta greater than or similar to 0.3. The DMFT calculations;reported here are performed using a state-of-the-art numerical;renormalization-group impurity solver, which yields accurate results;down to an unprecedentedly small doping level delta less than or similar;to 0.001.;1;0;0;0;1;1098-0121;WOS:000332163500003;;;J;Barros, M. S. M.;Nascimento Junior, A. J.;Macedo-Junior, A. F.;Ramos, J. G. G. S.;Barbosa, A. L. R.;Open chaotic Dirac billiards: Weak (anti)localization, conductance;fluctuations, and decoherence;PHYSICAL REVIEW B;88;24;245133;10.1103/PhysRevB.88.245133;DEC 30 2013;2013;In this paper, we investigate the transport properties of open chaotic;Dirac billiards and their intrinsic (chiral universal) symmetry classes.;The prominent examples of these systems are some categories of;topological insulators and graphene structures. We extend the;diagrammatic method of integration over the unitary group and obtain;analytical results for the semiclassical limit and for the high quantum;limit in the universal regime. We show the emergence of quantum;fingerprints characteristic of the chiral symmetries, which are;amplified in the presence of a single open channel in each electronic;terminals. We compare the chaotic Dirac billiards with the "Schrodinger;billiards" in a myriad of regimes, exhibiting the differences between;the chiral universal classes and the Wigner-Dyson classes. Two numerical;methods were used to confirm our analytical findings, yielding also the;distribution of conductances. We also investigate analytically the;effect of dephasing using the characteristic time scales of the chaotic;billiards and we show the appearance of peculiar numbers of chaos.;0;0;0;0;0;1098-0121;WOS:000332164700008;;;J;Cooke, D. G.;Jepsen, P. Uhd;Lek, Jun Yan;Lam, Yeng Ming;Sy, F.;Dignam, M. M.;Picosecond dynamics of internal exciton transitions in CdSe nanorods;PHYSICAL REVIEW B;88;24;241307;10.1103/PhysRevB.88.241307;DEC 30 2013;2013;The picosecond dynamics of excitons in colloidal CdSe nanorods are;directly measured via their 1s to 2p-like internal transitions by;ultrabroadband terahertz spectroscopy. Broadened absorption peaks from;both the longitudinal and transverse states are observed at 8.5 and 11;THz, respectively. The onset of exciton-LO phonon coupling appears as a;bleach in the optical conductivity spectra at the LO phonon energy for;times > 1 ps after excitation. Simulations show a suppressed exciton;temperature due to thermally excited hole states being rapidly captured;onto ligands or unpassivated surface states. The relaxation kinetics are;manipulated and the longitudinal transition is quenched by surface;ligand exchange with hole capturing pyridine.;Lam, Yeng Ming/A-2230-2011;Lam, Yeng Ming/0000-0001-9390-8074;1;0;0;0;1;1098-0121;WOS:000332164700002;;;J;Cote, R.;Barrette, Manuel;Validity of the two-component model of bilayer and trilayer graphene in;a magnetic field;PHYSICAL REVIEW B;88;24;245445;10.1103/PhysRevB.88.245445;DEC 30 2013;2013;The eigenstates of an electron in the chiral two-dimensional electron;gas (C2DEG) formed in an AB-stacked bilayer or an ABC-stacked trilayer;graphene is a spinor with four or six components, respectively. These;components give the amplitude of the wave function on the four or six;carbon sites in the unit cell of the lattice. In the tight-binding;approximation, the eigenenergies are thus found by diagonalizing a 4 x 4;or a 6 x 6 matrix. In the continuum approximation where the electron;wave vector k << 1/a(0), with a(0) the lattice constant of the graphene;sheets, a common approximation is the two-component (or "two-band");model(1) where the eigenstates for the bilayer and trilayer systems are;described by a two-component spinor that gives the amplitude of the wave;function on the two sites with low energy vertical bar E vertical bar <<;gamma(1) where gamma(1) is the hopping energy between sites that are;directly above one another in adjacent layers. The two-component model;has been used extensively to study the phase diagram of the C2DEG in a;magnetic field as well as its transport and optical properties. In this;paper, we use a numerical approach to compute the eigenstates and Landau;level energies of the full tight-binding model in the continuum;approximation and compare them with the prediction of the two-component;model when the magnetic field or an electrical bias between the;outermost layers is varied. Our numerical analysis shows that the;two-component model is a good approximation for bilayer graphene in a;wide range of magnetic field and bias but mostly for Landau level M = 0.;The applicability of the two-component model in trilayer graphene, even;for level M = 0, is much more restricted. In this case, the;two-component model fails to reproduce some of the level crossings that;occur between the sublevels of M = 0.;3;0;0;0;3;1098-0121;WOS:000332164700013;;;J;Gammelmark, Soren;Zinner, Nikolaj Thomas;Dipoles on a two-leg ladder;PHYSICAL REVIEW B;88;24;245135;10.1103/PhysRevB.88.245135;DEC 30 2013;2013;We study polar molecules with long-range dipole-dipole interactions;confined to move on a two-leg ladder for different orientations of the;molecular dipole moments with respect to the ladder. Matrix product;states are employed to calculate the many-body ground state of the;system as a function of lattice filling fractions, perpendicular hopping;between the legs, and dipole interaction strength. We show that the;system exhibits zigzag ordering when the dipolar interactions are;predominantly repulsive. As a function of dipole moment orientation with;respect to the ladder, we find that there is a critical angle at which;ordering disappears. This angle is slightly larger than the angle at;which the dipoles are noninteracting along a single leg. This behavior;should be observable using current experimental techniques.;2;0;0;0;2;1098-0121;WOS:000332164700010;;;J;Hofer, Patrick P.;Buettiker, Markus;Emission of time-bin entangled particles into helical edge states;PHYSICAL REVIEW B;88;24;241308;10.1103/PhysRevB.88.241308;DEC 30 2013;2013;We propose a single-particle source which emits into the helical edge;states of a two-dimensional quantum spin Hall insulator. Without;breaking time-reversal symmetry, this source acts like a pair of;noiseless single-electron emitters which each inject separately into a;chiral edge state. By locally breaking time-reversal symmetry, the;source becomes a proper single-particle emitter which exhibits shot;noise. Due to its intrinsic helicity, this system can be used to produce;time-bin entangled pairs of electrons in a controlled manner. The noise;created by the source contains information on the emitted wave packets;and is proportional to the concurrence of the emitted state.;Hofer, Patrick/O-1062-2013;Hofer, Patrick/0000-0001-6036-7291;7;0;0;0;7;1098-0121;WOS:000332164700003;;;J;Leon, C.;Latge, A.;Half-metallicity study of graphene nanoribbon bilayers under external;fields;PHYSICAL REVIEW B;88;24;245446;10.1103/PhysRevB.88.245446;DEC 30 2013;2013;Here we discuss the possibility of modulating energy gaps of graphene;nanoribbon bilayers, with zigzag edges, by applying electric fields. The;system is disposed in the Bernal configuration and is described by a;Hubbard Hamiltonian. We follow a Hartree-Fock mean-field theory to;calculate the electronic properties of the system. Under the action of a;transversal electric field, half-metallicity is found: One of the spin;bands increases the gap energy as the intensity of the field is;increased whereas the other decreases until achieving a null gap. For a;particular electric field range, the system exhibits metallic and;semiconducting features depending on the spin band. Half-metallicity is;enhanced due to an extra effect for the bilayer system: The presence of;a robust plateau-like in the gap versus field intensity diagram, for an;intermediate energy gap value of the semiconducting band. The;correlation of the gap plateau with local magnetizations and charge;numbers in the two layers is investigated. Further applied gate voltages;on the ribbons are considered to investigate the possibilities of;getting new physical responses for tilted electric field configurations.;Possible spintronic applications can be driven based on the differential;spin-band features achieved.;1;0;0;0;1;1098-0121;WOS:000332164700014;;;J;Lundgren, Rex;Fuji, Yohei;Furukawa, Shunsuke;Oshikawa, Masaki;Entanglement spectra between coupled Tomonaga-Luttinger liquids:;Applications to ladder systems and topological phases;PHYSICAL REVIEW B;88;24;245137;10.1103/PhysRevB.88.245137;DEC 30 2013;2013;We study the entanglement spectrum (ES) and entropy between two coupled;Tomonaga-Luttinger liquids (TLLs) on parallel periodic chains. This;problem gives access to the entanglement properties of various;interesting systems, such as spin ladders as well as two-dimensional;topological phases. By expanding interchain interactions to quadratic;order in bosonic fields, we are able to calculate the ES for both gapped;and gapless systems using only methods for free theories. In certain;gapless phases of coupled nonchiral TLLs, we interestingly find an ES;with a dispersion relation proportional to the square root of the;subsystem momentum, which we relate to a long-range interaction in the;entanglement Hamiltonian. We numerically demonstrate the emergence of;this unusual dispersion in a model of hard-core bosons on a ladder. In;gapped phases of coupled nonchiral TLLs, which are relevant to spin;ladders and topological insulators, we show that the ES consists of;linearly dispersing modes, which resembles the spectrum of a;single-chain TLL but is characterized by a modified TLL parameter. Based;on a calculation for coupled chiral TLLs, we are also able to provide a;very simple proof for the correspondence between the ES and the;edge-state spectrum in quantum Hall systems consistent with previous;numerical and analytical studies.;Oshikawa, Masaki/F-4992-2011; Furukawa, Shunsuke/E-4416-2013;Oshikawa, Masaki/0000-0002-7637-7432;;6;0;0;0;6;1098-0121;WOS:000332164700012;;;J;Moon, Pilkyung;Koshino, Mikito;Optical properties of the Hofstadter butterfly in the moire superlattice;PHYSICAL REVIEW B;88;24;241412;10.1103/PhysRevB.88.241412;DEC 30 2013;2013;We investigate the optical absorption spectrum and the selection rule;for the Hofstadter butterfly in twisted bilayer graphene under magnetic;fields. We demonstrate that the absorption spectrum exhibits a;self-similar recursive pattern reflecting the fractal nature of the;energy spectrum. We find that the optical selection rule has a nested;self-similar structure as well, and it is governed by the conservation;of the total angular momentum summed over different hierarchies.;Moon, Pilkyung/A-2930-2010;Moon, Pilkyung/0000-0003-3994-4255;2;0;0;0;2;1098-0121;WOS:000332164700005;;;J;Poirier, Mario;de Lafontaine, Mathieu;Bourbonnais, Claude;Pouget, Jean-Paul;Charge, spin, and lattice effects in the spin-Peierls ground state of;MEM(TCNQ)(2);PHYSICAL REVIEW B;88;24;UNSP 245134;10.1103/PhysRevB.88.245134;DEC 30 2013;2013;We report an investigation of charge, spin, and lattice effects in the;spin-Peierls state of the organic compound MEM(TCNQ)(2). The 16.5-GHz;dielectric function along the chain axis shows an enhancement below the;spin-Peierls transition temperature near 18 K consistent with the charge;coupling to the elastic strain involved in the transition. The velocity;of two elastic modes perpendicular to the chain axis presents anomalies;at the transition, which can be explained with a Landau free-energy;model including a linear-quadratic coupling energy term between the;appropriate elastic strain e and the spin-Peierls magnetic gap Delta(q).;The analysis of the dielectric and elastic features aims toward an order;parameter with an associated critical exponent beta similar to 0.36,;which is similar to the three-dimensional behavior seen in other;spin-Peierls materials. All these effects studied in a magnetic field up;to 18 Teslas appear also compatible with a mean-field model of a;quasi-one-dimensional spin-Peierls system.;0;0;0;0;0;1098-0121;WOS:000332164700009;;;J;Syzranov, S. V.;Rodionov, Ya. I.;Kugel, K. I.;Nori, F.;Strongly anisotropic Dirac quasiparticles in irradiated graphene;PHYSICAL REVIEW B;88;24;241112;10.1103/PhysRevB.88.241112;DEC 30 2013;2013;We study quasiparticle dynamics in graphene exposed to a linearly;polarized electromagnetic wave of very large intensity. We demonstrate;that low-energy transport in such system can be described by an;effective time-independent Hamiltonian, characterized by multiple Dirac;points in the first Brillouin zone. Around each Dirac point the spectrum;is anisotropic: the velocity along the polarization of the radiation;significantly exceeds the velocity in the perpendicular direction.;Moreover, in some of the points the transverse velocity oscillates as a;function of the radiation intensity. We find that the conductance of a;graphene p-n junction in the regime of strong irradiation depends on the;polarization as G(theta) proportional to vertical bar sin theta vertical;bar(3/2), where theta is the angle between the polarization and the p-n;interface, and oscillates as a function of the radiation intensity.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332164700001;;;J;Toke, Csaba;Particle-hole symmetry and bifurcating ground-state manifold in the;quantum Hall ferromagnetic states of multilayer graphene;PHYSICAL REVIEW B;88;24;241411;10.1103/PhysRevB.88.241411;DEC 30 2013;2013;The orbital structure of the quantum Hall ferromagnetic states in the;zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA,;etc. stackings) is determined by the exchange interaction with all;levels, including deep-lying states in the Dirac sea. This exchange;field favors orbitally coherent states with a U(1) orbital symmetry if;the filling factor nu is not a multiple of the number of layers. If;electrons fill the orbital sector of a fixed spin/valley component to;one-half, e.g., at nu = +/- 3, +/- 1 in the bilayer and at nu = +/- 2,;+/- 6 in the ABCA four-layer, there is a transition to a Z(2) x U(1);manifold. For weak interaction, the structure in the zero-energy Landau;band compensates for the different exchange interaction on the;sublattices in the Landau orbitals; on the other side, the ground state;comes in two copies that distribute charge on the sublattices;differently. We expect a sequence of similar bifurcations in multilayers;of Bernal stacking.;1;1;0;0;1;1098-0121;WOS:000332164700004;;;J;Tonegawa, S.;Hashimoto, K.;Ikada, K.;Tsuruhara, Y.;Lin, Y. -H.;Shishido, H.;Haga, Y.;Matsuda, T. D.;Yamamoto, E.;Onuki, Y.;Ikeda, H.;Matsuda, Y.;Shibauchi, T.;Cyclotron resonance study of quasiparticle mass and scattering rate in;the hidden-order and superconducting phases of URu2Si2;PHYSICAL REVIEW B;88;24;245131;10.1103/PhysRevB.88.245131;DEC 30 2013;2013;The observation of cyclotron resonance in ultraclean crystals of URu2Si2;[S. Tonegawa et al., Phys. Rev. Lett. 109, 036401 (2012)] provides;another route besides quantum oscillations to the determination of the;bulk electronic structure in the hidden-order phase. We report detailed;analyses of the resonance lines, which fully resolve the cyclotron mass;structure of the main Fermi surface sheets. A particular focus is given;to the anomalous splitting of the sharpest resonance line near the [110];direction under in-plane magnetic-field rotation, which implies peculiar;electronic structure in the hidden-order phase. The results under the;field rotation from [110] toward [001] direction reveal that the;splitting is a robust feature against field tilting from the basal;plane. This is in sharp contrast to the reported frequency branch alpha;in the quantum oscillation experiments showing a three-fold splitting;that disappears by a small field tilt, which can be explained by the;magnetic breakdown between the large hole sphere and small electron;pockets. Our analysis of the cyclotron resonance profiles reveals that;the heavier branch of the split line has a larger scattering rate,;providing evidence for the existence of hot-spot regions along the [110];direction. These results are consistent with the broken fourfold;rotational symmetry in the hidden-order phase, which can modify the;interband scattering in an asymmetric manner. We also extend our;measurements down to 0.7 K, which results in the observation of;cyclotron resonance in the superconducting state, where novel effects of;vortex dynamics may enter. We find that the cyclotron mass undergoes no;change in the superconducting state. In contrast, the quasiparticle;scattering rate shows a rapid decrease below the vortex-lattice melting;transition temperature, which supports the formation of quasiparticle;Bloch state in the vortex lattice phase.;Hashimoto, Kenichiro/C-4925-2012; Shibauchi, Takasada/B-9349-2008;Shibauchi, Takasada/0000-0001-5831-4924;2;1;0;0;2;1098-0121;WOS:000332164700006;;;J;Wang, Chenjie;Levin, Michael;Weak symmetry breaking in two-dimensional topological insulators;PHYSICAL REVIEW B;88;24;245136;10.1103/PhysRevB.88.245136;DEC 30 2013;2013;We show that there exist two-dimensional (2D) time-reversal invariant;fractionalized insulators with the property that both their boundary;with the vacuum and their boundary with a topological insulator can be;fully gapped without breaking time-reversal or charge conservation;symmetry. This result leads us to an apparent paradox: we consider a;geometry in which a disklike region made up of a topological insulator;is surrounded by an annular strip of a fractionalized insulator, which;is, in turn, surrounded by the vacuum. If we gap both boundaries of the;strip, we naively obtain an example of a gapped interface between a;topological insulator and the vacuum that does not break any;symmetries-an impossibility. The resolution of this paradox is that this;system spontaneously breaks time-reversal symmetry in an unusual way,;which we call weak symmetry breaking. In particular, we find that the;only order parameters that are sensitive to the symmetry breaking are;nonlocal operators that describe quasiparticle tunneling processes;between the two edges of the strip; expectation values of local order;parameters vanish exponentially in the limit of a wide strip. Also, we;find that the symmetry breaking in our system comes with a ground-state;degeneracy, but this ground-state degeneracy is topologically protected,;rather than symmetry protected. We show that this kind of symmetry;breaking can also occur at the edge of 2D fractional topological;insulators.;Wang, Chenjie/G-8652-2013;2;0;0;0;2;1098-0121;WOS:000332164700011;;;J;Zhang, Qingyun;Cheng, Yingchun;Gan, Li-Yong;Schwingenschloegl, Udo;Giant valley drifts in uniaxially strained monolayer MoS2;PHYSICAL REVIEW B;88;24;245447;10.1103/PhysRevB.88.245447;DEC 30 2013;2013;Using first-principles calculations, we study the electronic structure;of monolayer MoS2 under uniaxial strain. We show that the energy valleys;drift far off the corners of the Brillouin zone (K points), about 12;times the amount observed in graphene. Therefore, it is essential to;take this effect into consideration for a correct identification of the;band gap. The system remains a direct band gap semiconductor up to 4%;uniaxial strain, while the size of the band gap decreases from 1.73 to;1.54 eV. We also demonstrate that the splitting of the valence bands due;to inversion symmetry breaking and spin-orbit coupling is not sensitive;to strain.;Cheng, Yingchun/C-8895-2011; Gan, Liyong/D-8113-2013;3;0;0;0;3;1098-0121;WOS:000332164700015;;;J;Zhang, Wentao;Smallwood, Christopher L.;Jozwiak, Chris;Miller, Tristan L.;Yoshida, Yoshiyuki;Eisaki, Hiroshi;Lee, Dung-Hai;Lanzara, Alessandra;Signatures of superconductivity and pseudogap formation in;nonequilibrium nodal quasiparticles revealed by ultrafast angle-resolved;photoemission;PHYSICAL REVIEW B;88;24;245132;10.1103/PhysRevB.88.245132;DEC 30 2013;2013;We use time- and angle-resolved photoemission to measure the nodal;nonequilibrium electronic states in various dopings of;Bi2Sr2CaCu2O8+delta. We find that the initial pump-induced transient;signal of these ungapped states is strongly affected by the onset of the;superconducting gap at T-c, superconducting pairing fluctuations at T-p,;and the pseudogap at T*. Moreover, T-p marks a suggestive threshold in;the fluence-dependent transient signal, with the appearance of a;critical fluence below T-p that corresponds to the energy required to;break apart all Cooper pairs. These results challenge the notion of a;nodal-antinodal dichotomy in cuprate superconductors by establishing a;link between nodal quasiparticles and the cuprate phase diagram.;ZHANG, Wentao/B-3626-2011;4;1;0;0;4;1098-0121;WOS:000332164700007;;;J;Svintsov, D.;Vyurkov, V.;Ryzhii, V.;Otsuji, T.;Hydrodynamic electron transport and nonlinear waves in graphene;PHYSICAL REVIEW B;88;24;245444;10.1103/PhysRevB.88.245444;DEC 27 2013;2013;We derive the system of hydrodynamic equations governing the collective;motion of massless fermions in graphene. The obtained equations;demonstrate the lack of Galilean and Lorentz invariance and contain a;variety of nonlinear terms due to the quasirelativistic nature of;carriers. Using these equations, we show the possibility of soliton;formation in an electron plasma of gated graphene. The quasirelativistic;effects set an upper limit for soliton amplitude, which marks graphene;out of conventional semiconductors. The mentioned noninvariance of the;equations is revealed in spectra of plasma waves in the presence of;steady flow, which no longer obey the Doppler shift. The feasibility of;plasma-wave excitation by direct current in graphene channels is also;discussed.;Svintsov, Dmitry/I-1755-2014;0;0;0;0;0;1098-0121;WOS:000332160400002;;;J;Yan, Jun;Norskov, Jens K.;Calculated formation and reaction energies of 3d transition metal oxides;using a hierachy of exchange-correlation functionals;PHYSICAL REVIEW B;88;24;245204;10.1103/PhysRevB.88.245204;DEC 27 2013;2013;The formation and oxidation reaction energies of 16 transition metal;oxides (TMOs) are benchmarked against experiments with an increasing;complexity of the exchange-correlation (xc) functionals: PBE, PBE + U;with a single U for each transition metal element, PBE0 (25% exact;exchange included), EXX (100% exact exchange), and EXX + RPA (random;phase approximation for the correlation energy). Although rather;challenging on standard CPU computing facilities, the RPA calculations;were performed efficiently on graphic processing units (GPUs). For the;formation energies, the PBE + U, PBE0, EXX + RPA improves significantly;over PBE with mean absolute errors (MAE) of 0.83 (PBE), 0.39 (PBE + U),;0.34 (PBE0), and 0.39 (EXX + RPA) eV per oxygen. In addition, EXX+ RPA;improves over the other xc functionals on the oxidation reaction;energies, with MAE of 0.27 (PBE), 0.28 (PBE + U), 0.30 (PBE0), to 0.13;(EXX + RPA) eV per oxygen. The distinct trend observed for the;calculated oxidation reaction energies compared to the formation;energies is due to that the errors in formation energies for PBE and;EXX+ RPA are systematic; while for PBE + U and PBE0 the deviations have;both signs, so that the error cancellations between different valence;states work better for PBE and EXX + RPA. Finally, we compared the;performance of the EXX + RPA for total energies and G(0)W(0), which uses;the random phase approximation in constructing the W kernel, for band;gaps, and discuss a few challenges for the EXX + RPA method on TMOs.;0;0;0;0;0;1098-0121;WOS:000332160400001;;;J;Bahamon, D. A.;Neto, A. H. Castro;Pereira, Vitor M.;Effective contact model for geometry-independent conductance;calculations in graphene;PHYSICAL REVIEW B;88;23;235433;10.1103/PhysRevB.88.235433;DEC 27 2013;2013;A geometry-independent effective model for the contact self-energies is;proposed to calculate the quantum conductance of patterned graphene;devices using Green's functions. A Corbino disk, being the simplest;device where the contacts cannot be modeled as semi-infinite ribbons, is;chosen to illustrate this approach. This system's symmetry allows an;analytical solution against which numerical calculations on the lattice;can be benchmarked. The effective model perfectly describes the;conductance of Corbino disks at low-to-moderate energies, and is robust;against the size of the annular device region, the number of atoms on;the edge, external magnetic fields, or electronic disorder. The contact;model considered here affords an expedient, flexible, and;geometry-agnostic approach that easily allows the consideration of;device dimensions encompassing several million atoms, and realistic;radial dimensions of a few hundreds of nanometers.;Bahamon, Dario/G-1369-2012; Pereira, Vitor/D-4088-2009; Castro Neto, Antonio/C-8363-2014;Bahamon, Dario/0000-0003-3852-2085; Castro Neto,;Antonio/0000-0003-0613-4010;0;0;0;0;0;1098-0121;WOS:000332159200003;;;J;Hermann, Andreas;Ashcroft, N. W.;Hoffmann, Roald;Isotopic differentiation and sublattice melting in dense dynamic ice;PHYSICAL REVIEW B;88;21;214113;10.1103/PhysRevB.88.214113;DEC 27 2013;2013;The isotopes of hydrogen provide a unique exploratory laboratory for;examining the role of zero point energy (ZPE) in determining the;structural and dynamic features of the crystalline ices of water. There;are two critical regions of high pressure: (i) near 1 TPa and (ii) near;the predicted onset of metallization at around 5 TPa. At the lower;pressure of the two, we see the expected small isotopic effects on phase;transitions. Near metallization, however, the effects are much greater,;leading to a situation where tritiated ice could skip almost entirely a;phase available to the other isotopomers. For the higher pressure ices,;we investigate in some detail the enthalpics of a dynamic proton;sublattice, with the corresponding structures being quite ionic. The;resistance toward diffusion of single protons in the ground state;structures of high-pressure H2O is found to be large, in fact to the;point that the ZPE reservoir cannot overcome these. However, the;barriers toward a three-dimensional coherent or concerted motion of;protons can be much lower, and the ensuing consequences are explored.;Hermann, Andreas/E-8687-2010;Hermann, Andreas/0000-0002-8971-3933;1;0;0;0;1;1098-0121;WOS:000332157500001;;;J;Higashi, Yoichi;Nagai, Yuki;Machida, Masahiko;Hayashi, Nobuhiko;Field-angle resolved flux-flow resistivity as a phase-sensitive probe of;unconventional Cooper pairing;PHYSICAL REVIEW B;88;22;224511;10.1103/PhysRevB.88.224511;DEC 27 2013;2013;We theoretically investigate the applied magnetic field-angle dependence;of the flux-flow resistivity rho(f)(alpha(M)) for a uniaxially;anisotropic Fermi surface. rho(f) is related to the quasiparticle;scattering rate inside a vortex core, which reflects the sign change in;the superconducting pair potential. We find that rho(f)(alpha(M)) is;sensitive to the sign change in the pair potential and has its maximum;when the magnetic field is parallel to the gap-node direction. We;propose the measurement of the field-angle dependent oscillation of;rho(f)(alpha(M)) as a phase-sensitive field-angle resolved experiment.;Nagai, Yuki/B-6698-2011;Nagai, Yuki/0000-0001-5098-5440;0;0;0;0;0;1098-0121;WOS:000332158300001;;;J;Karakonstantakis, G.;Liu, L.;Thomale, R.;Kivelson, S. A.;Correlations and renormalization of the electron-phonon coupling in the;honeycomb Hubbard ladder and superconductivity in polyacene;PHYSICAL REVIEW B;88;22;224512;10.1103/PhysRevB.88.224512;DEC 27 2013;2013;We have performed extensive density matrix renormalization group (DMRG);studies of the Hubbard model on a honeycomb ladder. The band structure;(with Hubbard U = 0) exhibits an unusual quadratic band touching at;half-filling, which is associated with a quantum Lifshitz transition;from a band insulator to a metal. For one electron per site, nonzero U;drives the system into an insulating state in which there is no;pair-binding between added electrons; this implies that;superconductivity driven directly by the repulsive electron-electron;interactions is unlikely in the regime of small doping, x << 1. However,;the divergent density of states as x -> 0, the large values of the;phonon frequencies, and an unusual correlation induced enhancement of;the electron-phonon coupling imply that lightly doped polyacenes, which;approximately realize this structure, are good candidates for;high-temperature electron-phonon driven superconductivity.;1;1;0;0;1;1098-0121;WOS:000332158300002;;;J;Koerbel, Sabine;Elsaesser, Christian;Alignment of ferroelectric polarization and defect complexes in;copper-doped potassium niobate;PHYSICAL REVIEW B;88;21;214114;10.1103/PhysRevB.88.214114;DEC 27 2013;2013;Defect complexes consisting of Cu substitutionals on Nb sites and oxygen;vacancies in potassium niobate, KNbO3, are investigated with respect to;their contribution to ferroelectric hardening by means of;density-functional theory and classical atomistic simulations. We;determine the easy and hard directions for the ferroelectric;polarization created by these defect complexes, the energy differences;between easy and hard directions, and upper limits for the energy;barriers for switching the ferroelectric polarization between these;directions. The ferroelectric polarization preferentially aligns with;the defect complexes, which is expected to impede polarization switching;and hence to contribute to ferroelectric hardening.;1;0;0;0;1;1098-0121;WOS:000332157500002;;;J;Steger, Mark;Liu, Gangqiang;Nelsen, Bryan;Gautham, Chitra;Snoke, David W.;Balili, Ryan;Pfeiffer, Loren;West, Ken;Long-range ballistic motion and coherent flow of long-lifetime;polaritons;PHYSICAL REVIEW B;88;23;235314;10.1103/PhysRevB.88.235314;DEC 27 2013;2013;Exciton polaritons can be created in semiconductor microcavities. These;quasiparticles act as weakly interacting bosons with very light mass, of;the order of 10(-4) times the vacuum electron mass. Many experiments;have shown effects which can be viewed as due to a Bose-Einstein;condensate, or quasicondensate, of these particles. The lifetime of the;particles in most of those experiments has been of the order of a few;picoseconds, leading to significant nonequilibrium effects. By;increasing the cavity quality, we have made samples with longer;polariton lifetimes. With a photon lifetime on the order of 100-200 ps,;polaritons in these structures can not only come closer to reaching true;thermal equilibrium, a desired feature for many researchers working in;this field, but they can also travel much longer distances. We observe;the polaritons to ballistically travel on the order of 1 mm, and at;higher densities we see transport of a coherent condensate, or;quasicondensate, over comparable distances. In this paper we report a;quantitative analysis of the flow of the polaritons both in a low-;density, classical regime, and in the coherent regime at higher density.;Our analysis gives us a measure of the intrinsic lifetime for photon;decay from the microcavity and a measure of the strength of interactions;of the polaritons.;0;0;0;0;0;1098-0121;WOS:000332159200002;;;J;Sun, Dan;Wu, W.;Grigera, S. A.;Perry, R. S.;Mackenzie, A. P.;Julian, S. R.;Pressure study of nematicity and quantum criticality in Sr3Ru2O7 for an;in- plane field;PHYSICAL REVIEW B;88;23;235129;10.1103/PhysRevB.88.235129;DEC 27 2013;2013;We study the relationship between the nematic phases of Sr3Ru2O7 and;quantum criticality. At ambient pressure, one nematic phase is;associated with a metamagnetic quantum critical end point (QCEP) when;the applied magnetic field is near the c axis. We show, however, that;this metamagnetic transition does not produce the same nematic;signatures when the QCEP is reached by hydrostatic pressure with the;field applied in the ab plane. Moreover, a second nematic phase, that is;seen for field applied in the ab plane close to, but not right at, a;second metamagnetic anomaly, persists with minimal change to the highest;applied pressure, 16.55 kbar. Taken together our results suggest that;metamagnetic quantum criticality may not be necessary for the formation;of a nematic phase in Sr3Ru2O7.;0;0;0;0;0;1098-0121;WOS:000332159200001;;;J;Wierzbicki, M.;Swirkowicz, R.;Barnas, J.;Giant spin thermoelectric efficiency in ferromagnetic graphene;nanoribbons with antidots;PHYSICAL REVIEW B;88;23;235434;10.1103/PhysRevB.88.235434;DEC 27 2013;2013;Thermoelectric effects in zigzag graphene nanoribbons with parallel;alignment of the edge spin polarizations are investigated theoretically.;Spin and charge thermopower, electrical and heat conductance, and charge;and spin thermoelectric efficiency are calculated numerically for;pristine nanoribbons as well as for nanoribbons with periodic;one-dimensional lattice of structural defects in the form of antidots.;It is shown that structural defects reduce thermal conductance due to;phonons and open gaps in the corresponding electronic spectrum. This, in;turn, leads to a significant enhancement of the Seebeck and spin Seebeck;coefficients as well as of the thermoelectric efficiency. A giant;enhancement appears in certain regions of chemical potential (controlled;by doping or external gate) and survives at room temperatures.;1;0;0;0;1;1098-0121;WOS:000332159200004;;;J;Apalkov, Vadym;Stockman, Mark I.;Metal nanofilm in strong ultrafast optical fields;PHYSICAL REVIEW B;88;24;245438;10.1103/PhysRevB.88.245438;DEC 26 2013;2013;We predict that a metal nanofilm subjected to an ultrashort (near-single;oscillation) optical pulse of a high field amplitude greater than or;similar to 3 V/A at normal incidence undergoes an ultrafast (at subcycle;times less than or similar to 1 fs) transition to a state resembling;semimetal. Its reflectivity is greatly reduced, while its transmissivity;and the optical field inside the metal are greatly increased. Despite;the metal being a centrosymmetric medium, the strong pulse causes net;charge transfer in the direction determined by the carrier envelope;phase (CEP) of the pulse, which is opposite to the direction of the;maximum field.;2;0;0;0;2;1098-0121;WOS:000331756500005;;;J;Brems, Steven;Liu, Haoliang;Temst, Kristiaan;Van Haesendonck, Chris;Rotation sense of the magnetization in the Co/CoO exchange-bias system;probed with anisotropic magnetoresistance measurements;PHYSICAL REVIEW B;88;21;214427;10.1103/PhysRevB.88.214427;DEC 26 2013;2013;The possibility of tracking the average rotation sense of the;magnetization vector of a ferromagnetic layer upon magnetization;reversal by means of magnetotransport measurements is explored. It is;demonstrated that the rotation sense of the ferromagnetic magnetization;vector during a hysteresis loop can be determined for the;polycrystalline Co/CoO exchange bias system by measuring the anisotropic;magnetoresistance (AMR) with a specific choice of the measurement;geometry. The AMR measurements reveal that the rotation direction of the;magnetization vector can be reversed by performing an in-plane;hysteresis loop with a magnetic field perpendicular to the cooling;field. This reversal can be directly linked to the experimental fact;that after training, i.e., after performing hysteresis loops with a;field along the cooling field direction, the average orientation of the;uncompensated magnetization of the granular CoO antiferromagnet can be;largely rotated back to the initial orientation after field cooling by;applying a perpendicular field with the appropriate amplitude and;orientation.;1;0;0;0;1;1098-0121;WOS:000331751200005;;;J;Cuadra, J.;Sarkar, D.;Vina, L.;Hvam, J. M.;Nalitov, A.;Solnyshkov, D.;Malpuech, G.;Polarized emission in polariton condensates: Switching in a;one-dimensional natural trap versus inversion in two dimensions;PHYSICAL REVIEW B;88;23;235312;10.1103/PhysRevB.88.235312;DEC 26 2013;2013;We perform polarization resolved spectroscopy of two-and one-dimensional;microcavity-polariton condensates, which are formed by exciting the;system in the optical parametric oscillator configuration. We observe;polarization inversion for linearly polarized pumping parallel to the;wire in both the 1D and 2D systems. As the polarization plane of the;pump is rotated, the degree of linear polarization of the 2D system;oscillates between orthogonal polarizations with the same period as that;of the pump. However, the 1D system switches abruptly between two states;of high degree of linear polarization with half the period. Two;complementary models, based on semiclassical Boltzmann kinetic equations;and the Gross-Pitaevskii equation, respectively, obtain an excellent;agreement with the experimental results, providing a deep insight into;the mechanisms responsible for the polarization switching.;Vina, Luis/E-9415-2012;Vina, Luis/0000-0002-6376-6703;0;0;0;0;0;1098-0121;WOS:000331754500006;;;J;Das, Subrat Kumar;Singh, Viveka Nand;Majumdar, Pinaki;Magnon spectrum in the domain ferromagnetic state of antisite-disordered;double perovskites;PHYSICAL REVIEW B;88;21;214428;10.1103/PhysRevB.88.214428;DEC 26 2013;2013;In their ideal structure, double perovskites such as Sr2FeMoO6 have;alternating Fe and Mo along each cubic axis, and a homogeneous;ferromagnetic metallic ground state. Imperfect annealing leads to the;formation of structural domains. The moments on mislocated Fe atoms that;adjoin each other across the domain boundary have an antiferromagnetic;coupling between them. This leads to a peculiar magnetic state, with;ferromagnetic domains coupled antiferromagnetically. At a short distance;the system exhibits ferromagnetic correlation while at large length;scales the net moment is strongly suppressed due to interdomain;cancellation. We provide a detailed description of the spin-wave;excitations of this complex magnetic state, obtained within a 1/S;expansion, for a progressively higher degree of mislocation, i.e.,;antisite disorder. At a given wave vector the magnons propagate at;multiple energies, related, crudely, to "domain confined" modes with;which they have a large overlap. We provide a qualitative understanding;of the trend observed with growing antisite disorder, and contrast these;results to the much broader spectrum that one obtains for uncorrelated;antisites.;0;0;0;0;0;1098-0121;WOS:000331751200006;;;J;Dugaev, V. K.;Katsnelson, M. I.;Edge scattering of electrons in graphene: Boltzmann equation approach to;the transport in graphene nanoribbons and nanodisks;PHYSICAL REVIEW B;88;23;235432;10.1103/PhysRevB.88.235432;DEC 26 2013;2013;We discuss the contribution of edge scattering to the conductance of;graphene nanoribbons and nanoflakes. Using different possible types of;the boundary conditions for the electron wave function at the edge, we;found dependences of the momentum relaxation time and conductance on the;geometric sizes and on the carrier density. We also consider the case of;ballistic nanoribbon and nanodisk, for which the edge scattering is the;main mechanism of momentum relaxation.;3;0;0;0;3;1098-0121;WOS:000331754500008;;;J;Fossati, Paul C. M.;Van Brutzel, Laurent;Chartier, Alain;Crocombette, Jean-Paul;Simulation of uranium dioxide polymorphs and their phase transitions;PHYSICAL REVIEW B;88;21;214112;10.1103/PhysRevB.88.214112;DEC 26 2013;2013;In this article first-principles DFT calculations and molecular dynamics;simulations using empirical potentials have been used to study four;different polymorphs of uranium dioxide that appear under high;compressive and tensile deformations. It has been found, as expected,;that the ground-state structure is the fluorite-type structure (space;group Fm (3) over barm). Under high compressive deformation urania;transforms into cotunnite-type structure (space group Pnma), as already;known experimentally. The calculated transition pressure is 28 GPa in;agreement with the experimental data. Under tensile deformation urania;transforms into either scrutinyite-type structure (space group Pbcn) or;rutile-type (space group P4(2)/mnm) structure. These two phases are;almost energetically degenerate; hence it is impossible to distinguish;which phase is the most favorable. The transition pressure for both;phases is found to be equal to -10 GPa. Subsequently, assessment of four;of the most used empirical potentials for UO2-Morelon, Arima, Basak, and;Yakub-have been carried out comparing the equations of state with those;found with DFT calculations. The Morelon potential has been found to be;the most accurate to describe the different urania polymorphs. Using;this empirical potential and a dedicated minimization procedure,;complete transition pathways between the ground state (Fm (3) over barm);and both tensile structures (Pbcn or P4(2)/mnm) are described. Finally,;uniaxial tensile load molecular dynamics simulations have been;performed. It has been found that for load in the AU: ;FN Thomson Reuters Web of Scienceâ„¢;1.0;J;Bakr, M.;Souliou, S. M.;Blanco-Canosa, S.;Zegkinoglou, I.;Gretarsson, H.;Strempfer, J.;Loew, T.;Lin, C. T.;Liang, R.;Bonn, D. A.;Hardy, W. N.;Keimer, B.;Le Tacon, M.;Lattice dynamical signature of charge density wave formation in;underdoped YBa2Cu3O6+x;PHYSICAL REVIEW B;88;21;214517;10.1103/PhysRevB.88.214517;DEC 31 2013;2013;We report a detailed Raman scattering study of the lattice dynamics in;detwinned single crystals of the underdoped high-temperature;superconductor YBa2Cu3O6+x (x = 0.75, 0.6, 0.55, and 0.45). Whereas at;room temperature the phonon spectra of these compounds are similar to;that of optimally doped YBa2Cu3O6.99, additional Raman-active modes;appear upon cooling below similar to 170-200Kin underdoped crystals. The;temperature dependence of these new features indicates that they are;associated with the incommensurate charge density wave state recently;discovered using synchrotron x-ray scattering techniques on the same;single crystals. Raman scattering thus has the potential to explore the;evolution of this state under extreme conditions.;Zegkinoglou, Ioannis/H-2343-2013; Le Tacon, Mathieu/D-8023-2011;Le Tacon, Mathieu/0000-0002-5838-3724;6;0;0;0;6;1098-0121;WOS:000332165200002;;;J;Benedicto, Jessica;Centeno, Emmanuel;Polles, Remi;Moreau, Antoine;Ultimate resolution of indefinite metamaterial flat lenses;PHYSICAL REVIEW B;88;24;245138;10.1103/PhysRevB.88.245138;DEC 31 2013;2013;We propose an approach allowing a systematic optimization of lenses;based on hyperbolic metamaterials. The lensing properties of these;highly anisotropic materials are summed up in a complex effective index;extracted from the complex dispersion relation. The analytical;expression of this effective index in the homogenization regime or its;direct computation from the Bloch band diagram in the resonant regime;leads to hyperbolic metamaterials that outperform the state-of-art flat;lenses. We show that feasible metal-dielectric multilayers provide;superresolved images for visible light (around 400 nm) even when fully;taking absorption into account.;0;0;0;0;0;1098-0121;WOS:000332166700001;;;J;Biswas, P. K.;Amato, A.;Baines, C.;Khasanov, R.;Luetkens, H.;Lei, Hechang;Petrovic, C.;Morenzoni, E.;Low superfluid density and possible multigap superconductivity in the;BiS2-based layered superconductor Bi4O4S3;PHYSICAL REVIEW B;88;22;224515;10.1103/PhysRevB.88.224515;DEC 31 2013;2013;The magnetic penetration depth lambda as a function of temperature in;Bi4O4S3 was studied by muon-spin-spectroscopy measurements. The;superfluid density of Bi4O4S3 is found to be very low. The dependence of;lambda (2) on temperature possibly suggests the existence of two;s-wave-type energy gaps with the zero-temperature values of 0.93 (3) and;0.09 (4) meV. The upturn in the temperature dependence of the upper;critical field close to T-c further supports multigap superconductivity;in Bi4O4S3. The presence of two superconducting energy gaps is;consistent with theoretical and other experimental studies. However, a;single-gap s-wave model fit with a gap of 0.88 (2) meV cannot be ruled;out completely. The value of lambda(T) at T = 0 K is estimated to be;lambda(0) = 861 (17) nm, one of the largest of all known layered;superconductors, reflecting a very low superfluid density.;Luetkens, Hubertus/G-1831-2011;4;0;0;0;4;1098-0121;WOS:000332166200005;;;J;Cao, G.;Qi, T. F.;Li, L.;Terzic, J.;Cao, V. S.;Yuan, S. J.;Tovar, M.;Murthy, G.;Kaul, R. K.;Evolution of magnetism in the single-crystal honeycomb iridates;(Na1-xLix)(2)IrO3;PHYSICAL REVIEW B;88;22;220414;10.1103/PhysRevB.88.220414;DEC 31 2013;2013;We report the successful synthesis of single crystals of the layered;iridate (Na1-xLix)(2)IrO3, 0 <= x <= 0.9, and a thorough study of its;structural, magnetic, thermal, and transport properties. This compound;allows a controlled interpolation between Na2IrO3 and Li2IrO3, while;maintaining the quantum magnetism of the honeycomb Ir4+ planes. The;measured phase diagram demonstrates a suppression of the Neel;temperature T-N at an intermediate x, indicating that the magnetic;orders in Na2IrO3 and Li2IrO3 are distinct. X-ray data show that for x;approximate to 0.7, when T-N is suppressed the most, the honeycomb;structure is least distorted, leading to the speculation that at this;intermediate doping of the material is closest to the spin liquid that;has been sought after in Na2IrO3 and Li2IrO3. By analyzing our magnetic;data with a single-ion theoretical model we also show that the trigonal;splitting on the Ir4+ ions changes sign from Na2IrO3 to Li2IrO3.;8;0;0;0;8;1098-0121;WOS:000332166200001;;;J;Farr, Warrick G.;Creedon, Daniel L.;Goryachev, Maxim;Benmessai, Karim;Tobar, Michael E.;Ultrasensitive microwave spectroscopy of paramagnetic impurities in;sapphire crystals at millikelvin temperatures;PHYSICAL REVIEW B;88;22;224426;10.1103/PhysRevB.88.224426;DEC 31 2013;2013;Progress in the emerging field of engineered quantum systems requires;the development of devices that can act as quantum memories. The;realization of such devices by doping solid-state cavities with;paramagnetic ions imposes a tradeoff between ion concentration and;cavity coherence time. Here, we investigate an alternative approach;involving interactions between photons and naturally occurring impurity;ions in ultrapure crystalline microwave cavities exhibiting;exceptionally high quality factors. We implement a hybrid whispering;gallery/electron spin resonance method to perform rigorous spectroscopy;of an undoped single-crystal sapphire resonator over the frequency range;8-19 GHz, and at external applied DC magnetic fields up to 0.9 T.;Measurements of high-purity sapphire cooled close to 100 mK reveal the;presence of Fe3+, Cr3+, and V2+ impurities. A host of electron;transitions are measured and identified, including the two-photon;classically forbidden quadrupole transition (Delta m(s) = 2) for Fe3+,;as well as hyperfine transitions of V2+.;Tobar, Michael/C-9763-2009; Creedon, Daniel/A-8772-2010; Goryachev, Maxim/K-5851-2013;Creedon, Daniel/0000-0003-2912-3381; Goryachev,;Maxim/0000-0002-0257-4054;5;0;0;0;5;1098-0121;WOS:000332166200004;;;J;Joseph, B.;Bendele, M.;Simonelli, L.;Maugeri, L.;Pyon, S.;Kudo, K.;Nohara, M.;Mizokawa, T.;Saini, N. L.;Local structural displacements across the structural phase transition in;IrTe2: Order-disorder of dimers and role of Ir-Te correlations;PHYSICAL REVIEW B;88;22;224109;10.1103/PhysRevB.88.224109;DEC 31 2013;2013;We have studied local structure of IrTe2 by Ir L-3-edge extended x-ray;absorption fine structure (EXAFS) measurements as a function of;temperature to investigate origin of the observed structural phase;transition at T-s similar to 270 K. The EXAFS results show an appearance;of longer Ir-Te bond length (Delta R similar to 0.05 angstrom) at T <;T-s. We have found Ir-Ir dimerization, characterized by distinct Ir-Ir;bond lengths (Delta R similar to 0.13 angstrom), existing both above and;below T-s. The results suggest that the phase transition in IrTe2 should;be an order-disorder-like transition of Ir-Ir dimers assisted by Ir-Te;bond correlations, thus indicating important role of the interaction;between the Ir 5d and Te 5p orbitals in this transition.;KUDO, Kazutaka/B-1468-2011; NOHARA, Minoru/B-1476-2011;3;0;0;0;3;1098-0121;WOS:000332166200003;;;J;Kobayashi, Keita;Machida, Masahiko;Ota, Yukihiro;Nori, Franco;Massless collective excitations in frustrated multiband superconductors;PHYSICAL REVIEW B;88;22;224516;10.1103/PhysRevB.88.224516;DEC 31 2013;2013;We study collective excitations in three- and four-band superconductors;with interband frustration, which causes neither 0 nor pi interband;phases in the superconducting state. Using a low-energy spin Hamiltonian;originating from a multiband tight-binding model, we find that mass;reduction of a Leggett mode occurs in a wide parameter region of this;four-band system. As a limiting case, we have a massless Leggett mode.;This massless mode is related to the fact that the mean-field energy;does not depend on a relative phase of superconducting order parameters.;In other words, we find a link of the massless mode with a degeneracy;between a time-reversal-symmetry-breaking state (neither 0 nor pi;phases) and a time-reversal-symmetric state (either 0 or pi phases).;Therefore, the mass of collective modes characterizes well the;time-reversal symmetry in frustrated multiband superconductors.;Nori, Franco/B-1222-2009;Nori, Franco/0000-0003-3682-7432;2;0;0;0;2;1098-0121;WOS:000332166200006;;;J;Ohtsubo, Yoshiyuki;Yaji, Koichiro;Hatta, Shinichiro;Okuyama, Hiroshi;Aruga, Tetsuya;Two-dimensional states localized in subsurface layers of Ge(111);PHYSICAL REVIEW B;88;24;245310;10.1103/PhysRevB.88.245310;DEC 31 2013;2013;The origin of the two-dimensional surface states localized in subsurface;regions of the Ge(111) substrate has been studied by;density-functional-theory calculations, which were compared with the;experimental results of angle-resolved photoelectron spectroscopy. For;the Bi/Ge(111)-(root 3 x root 3)R30 degrees, Br/Ge(111)-(1x1), and;Tl/Ge(111)-(1x1) surfaces, we found that the surface states are;classified into three groups. The energy dispersion and the orbital;character for each band implies the relationship between the subsurface;states and the bulk heavy-hole, light-hole, and spin-orbit split-off;bands. These results indicate that the subsurface states originate from;the bulk bands that are perturbed due to the truncation of the;three-dimensional periodicity at the surface.;Okuyama, Hiroshi/H-7570-2014;1;0;0;0;1;1098-0121;WOS:000332166700002;;;J;Oiwake, M.;Ootsuki, D.;Noji, T.;Hatakeda, T.;Koike, Y.;Horio, M.;Fujimori, A.;Saini, N. L.;Mizokawa, T.;Electronic structure and phase separation of superconducting and;nonsuperconducting KxFe2-ySe2 revealed by x-ray photoemission;spectroscopy;PHYSICAL REVIEW B;88;22;224517;10.1103/PhysRevB.88.224517;DEC 31 2013;2013;We have investigated the electronic structure of superconducting (SC);and nonsuperconducting (non-SC) KxFe2-ySe2 using x-ray photoemission;spectroscopy (XPS). The spectral shape of the Fe 2p XPS is found to;depend on the amount of Fe vacancies. The Fe 2p(3/2) peak of the SC and;non-SC Fe-rich samples is accompanied by a shoulder structure on the;lower binding energy side, which can be attributed to the metallic phase;embedded in the Fe2+ insulating phase. The absence of the shoulder;structure in the non-SC Fe-poor sample allows us to analyze the Fe 2p;spectra using a FeSe4 cluster model. The Fe 3d-Se 4p charge-transfer;energy of the Fe2+ insulating phase is found to be similar to 2.3 eV;which is smaller than the Fe 3d-Fe 3d Coulomb interaction of similar to;3.5 eV. This indicates that the Fe2+ insulating state is the;charge-transfer type in the Zaanen-Sawatzky-Allen scheme. We also find a;substantial change in the valence-band XPS as a function of Fe content;and temperature. The metallic state at the Fermi level is seen in the SC;and non-SC Fe-rich samples and tends to be enhanced with cooling in the;SC sample.;0;0;0;0;0;1098-0121;WOS:000332166200007;;;J;Park, Keeseong;Nomura, Yusuke;Arita, Ryotaro;Llobet, Anna;Louca, Despina;Local strain and anharmonicity in the bonding of Bi2Se3-xTex topological;insulators;PHYSICAL REVIEW B;88;22;224108;10.1103/PhysRevB.88.224108;DEC 31 2013;2013;Using neutron diffraction and the pair density function analysis, the;local atomic structure of the three-dimensional Bi2Se3-xTex (x = 0, 1,;2, and 3) topological insulator is investigated. The substitution of Te;for Se in Bi2Se3-xTex (x = 0, 1, 2, and 3) is not random and its;preferred site is at the edges of the quintuple layer. This generates a;local strain due to the atom size mismatch between Se and Te. The site;preference is surprising given that the Bi to chalcogen bonds are;strongest when the ions are at the edges than in the middle layer. The;(Se/Te) atoms in the middle sublayer of the quintuple are coupled more;softly to the Bi atoms than those of the edges and have lower Debye;temperatures. This suggests that the atomic properties within the;quintuple layer are different than those at the edges. Additionally, the;results from band structure and density of state calculations are;reported to show the dependence of doping and temperature.;Arita, Ryotaro/D-5965-2012; Llobet, Anna/B-1672-2010;Arita, Ryotaro/0000-0001-5725-072X;;0;0;0;0;0;1098-0121;WOS:000332166200002;;;J;Pogorelov, Y. G.;Santos, M. C.;Loktev, V. M.;Impurity effects on electronic transport in ferropnictide;superconductors;PHYSICAL REVIEW B;88;22;224518;10.1103/PhysRevB.88.224518;DEC 31 2013;2013;Effects of impurities and disorder on transport properties by electronic;quasiparticles in superconducting iron pnictides are theoretically;considered. The most prominent new features compared to the case of pure;material should appear at high enough impurity concentration when a;specific narrow band of conducting quasiparticle states can develop;within the superconducting gap, around the position of localized;impurity level by a single impurity center. The predicted specific;threshold effects in the frequency-dependent optical conductivity and;temperature-dependent thermal conductivity and also in Seebeck and;Peltier coefficients can have interesting potentialities for practical;applications.;0;0;0;0;0;1098-0121;WOS:000332166200008;;;J;Reich, K. V.;Chen, T.;Efros, Al. L.;Shklovskii, B. I.;Photoluminescence in arrays of doped semiconductor nanocrystals;PHYSICAL REVIEW B;88;24;245311;10.1103/PhysRevB.88.245311;DEC 31 2013;2013;We study the dependence of the quantum yield of photoluminescence of a;dense, periodic array of semiconductor nanocrystals (NCs) on the level;of doping and NC size. Electrons introduced to NCs via doping quench;photoluminescence by the Auger process, so that practically only NCs;without electrons contribute to the photoluminescence. Computer;simulation and analytical theory are used to find a fraction of such;empty NCs as a function of the average number of donors per NC and NC;size. For an array of small spherical NCs, the quantization gap between;1S and 1P levels leads to transfer of electrons from NCs with large;number of donors to those without donors. As a result, empty NCs become;extinct, and photoluminescence is quenched abruptly at an average number;of donors per NC close to 1.8. The relative intensity of;photoluminescence is shown to correlate with the type of hopping;conductivity of an array of NCs.;2;0;0;0;2;1098-0121;WOS:000332166700003;;;J;Rousse, Gwenaelle;Rodriguez-Carvajal, Juan;Wurm, Calin;Masquelier, Christian;Spiral magnetic structure in the iron diarsenate LiFeAs2O7: A neutron;diffraction study;PHYSICAL REVIEW B;88;21;214433;10.1103/PhysRevB.88.214433;DEC 31 2013;2013;The magnetic structure of LiFeAs2O7 (monoclinic, space group C2) has;been solved using neutron powder diffraction. This compound presents an;antiferromagnetic behavior characterized by a long-range ordering;observed in the neutron diffraction patterns below the Neel temperature;(T-N = 35 K). The magnetic structure is found to be incommensurate with;respect to the nuclear structure, the magnetic peaks being indexed with;a propagation vector k = (0.709, 0, 0.155). The magnetic moments form a;general spiral (helical-cycloidal) arrangement with a constant magnetic;moment of 4.21 mu B. The magnetic structure is discussed in terms of;super-super exchange interactions involving two oxygen atoms belonging;to an AsO4 tetrahedron, and compared with the magnetic structure of the;di-phosphate analogue LiFeP2O7. The presence of triangular super-super;exchange paths is believed to be at the origin of this incommensurate;magnetic structure. The potential of LiFeAs2O7 as a possible;multiferroic material is discussed.;Rodriguez-Carvajal, Juan/C-4362-2008;Rodriguez-Carvajal, Juan/0000-0001-5582-2632;1;0;0;0;1;1098-0121;WOS:000332165200001;;;J;Smith, Peter M.;Kennett, Malcolm P.;Disorder effects on superconducting tendencies in the checkerboard;Hubbard model;PHYSICAL REVIEW B;88;21;214518;10.1103/PhysRevB.88.214518;DEC 31 2013;2013;The question of whether spatially inhomogeneous hopping in the two;dimensional Hubbard model can lead to enhancement of superconductivity;has been tackled by a number of authors in the context of the;checkerboard Hubbard model (CHM). We address the effects of disorder on;superconducting properties of the CHM by using exact diagonalization;calculations for both potential and hopping disorder. We characterize;the superconducting tendencies of the model by focusing on the;pair-binding energy, the spin gap, and d-wave pairing order parameter.;We find that superconducting tendencies, particularly the pair-binding;energy, are more robust to disorder when there is inhomogeneous hopping;than for the uniform Hubbard model. We also study all possible staggered;potentials for an eight-site CHM cluster and relate the behavior of;these configurations to the disordered system.;Kennett, Malcolm/I-2898-2012;1;0;0;0;1;1098-0121;WOS:000332165200003;;;J;Cortes-Huerto, R.;Sondon, T.;Saul, A.;Role of temperature in the formation and growth of gold monoatomic;chains: A molecular dynamics study;PHYSICAL REVIEW B;88;23;235438;10.1103/PhysRevB.88.235438;DEC 31 2013;2013;The effect of temperature on the formation and growth of monoatomic;chains is investigated by extensive molecular dynamics simulations using;a semiempirical potential based on the second-moment approximation to;the tight-binding Hamiltonian. Gold nanowires, with an aspect ratio of;similar to 13 and a cross section of similar to 1 nm(2), are stretched;at a rate of 3 m/s in the range of temperatures 5-600 K with 50 initial;configurations per temperature. A detailed study on the probability to;form monoatomic chains (MACs) is presented. Two domains are apparent in;our simulations: one at T < 100 K, where MACs develop from crystalline;disorder at the constriction, and the other at T > 100 K, where MACs;form as a consequence of plastic deformation of the nanowire. Our;results show that the average length of the formed MACs maximizes at T =;150 K, which is supported by simple energy arguments.;0;0;0;0;0;1098-0121;WOS:000332166400004;;;J;Despoja, V.;Loncaric, I.;Mowbray, D. J.;Marusic, L.;Quasiparticle spectra and excitons of organic molecules deposited on;substrates: G(0)W(0)-BSE approach applied to benzene on graphene and;metallic substrates;PHYSICAL REVIEW B;88;23;235437;10.1103/PhysRevB.88.235437;DEC 31 2013;2013;We present an alternative methodology for calculating the quasiparticle;energy, energy loss, and optical spectra of a molecule deposited on;graphene or a metallic substrate. To test the accuracy of the method it;is first applied to the isolated benzene (C6H6) molecule. The;quasiparticle energy levels and especially the energies of the benzene;excitons (triplet, singlet, optically active and inactive) are in very;good agreement with available experimental results. It is shown that the;vicinity of the various substrates [pristine/doped graphene or (jellium);metal surface] reduces the quasiparticle highest occupied molecular;orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap by an amount;that slightly depends on the substrate type. This is consistent with the;simple image theory predictions. It is even shown that the substrate;does not change the energy of the excitons in the isolated molecule. We;prove (in terms of simple image theory) that energies of the excitons;are indeed influenced by two mechanisms which cancel each other. We;demonstrate that the benzene singlet optically active (E-1u) exciton;couples to real electronic excitations in the substrate. This causes it;substantial decay, such as Gamma approximate to 174 meV for pristine;graphene and Gamma approximate to 362 meV for metal surfaces as the;substrate. However, we find that doping graphene does not influence the;E-1u exciton decay rate.;Mowbray, Duncan/A-5531-2010; DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014; Loncaric, Ivor/J-6677-2014;Mowbray, Duncan/0000-0002-8520-0364; Loncaric, Ivor/0000-0002-5554-4641;2;0;0;0;2;1098-0121;WOS:000332166400003;;;J;Dutt, Prasenjit apq;Le Hur, Karyn;Strongly correlated thermoelectric transport beyond linear response;PHYSICAL REVIEW B;88;23;235133;10.1103/PhysRevB.88.235133;DEC 31 2013;2013;We investigate nonlinear thermoelectric transport through quantum;impurity systems with strong on-site interactions. We show that the;steady-state transport through interacting quantum impurities in contact;with electron reservoirs at significantly different temperatures can be;captured by an effective-equilibrium density matrix, expressed compactly;in terms of the Lippmann-Schwinger operators of the system. In addition,;the reservoirs can be maintained at arbitrary chemical potentials. The;interplay between the temperature gradient and bias voltage gives rise;to a nontrivial breaking of particle-hole symmetry in the strongly;correlated regime, manifest in the Abrikosov-Suhl localized electron;resonance. This purely many-body effect, which is in agreement with;experimental results, is beyond the purview of mean-field arguments.;2;0;0;0;2;1098-0121;WOS:000332166400001;;;J;Li, Yunpu;King, Jonathan P.;Reimer, Jeffrey A.;Meriles, Carlos A.;Near-band-gap photoinduced nuclear spin dynamics in semi-insulating;GaAs: Hyperfine- and quadrupolar-driven relaxation;PHYSICAL REVIEW B;88;23;235211;10.1103/PhysRevB.88.235211;DEC 31 2013;2013;Understanding and manipulating spin polarization and transport in the;vicinity of semiconductor-hosted defects is a problem of present;technological and fundamental importance. Here, we use high-field;magnetic resonance to monitor the relaxation dynamics of spin-3/2 nuclei;in semi-insulating GaAs. Our experiments benefit from the conditions;created in the limit of low illumination intensities, where intermittent;occupation of the defect site by photoexcited electrons leads to;electric field gradient fluctuations and concomitant spin relaxation of;the neighboring quadrupolar nuclei. We find indication of a;heterogeneous distribution of polarization, governed by different;classes of defects activated by either weak or strong laser excitation.;Upon application of a train of light pulses of variable repetition rate;and on/off ratio, we uncover an intriguing regime of mesoscale nuclear;spin diffusion restricted by long-range, nonuniform electric field;gradients. Given the slow time scale governing nuclear spin evolution,;such optically induced polarization patterns could be exploited as a;contrast mechanism to expose dark lattice defects or localized charges;with nanoscale resolution.;0;0;0;0;0;1098-0121;WOS:000332166400002;;;J;Adolff, Christian F.;Haenze, Max;Vogel, Andreas;Weigand, Markus;Martens, Michael;Meier, Guido;Self-organized state formation in magnonic vortex crystals;PHYSICAL REVIEW B;88;22;224425;10.1103/PhysRevB.88.224425;DEC 30 2013;2013;We study the polarization-state formation in magnonic vortex crystals;via scanning transmission x-ray microscopy. Self-organized state;formation is observed by adiabatic reduction of a high-frequency field;excitation. The emerging polarization patterns are shown to depend on;the frequency of excitation and the strength of the dipolar interaction;between the elements. In spite of the complexity of the investigated;system, global order caused by local interactions creates polarization;states with a high degree of symmetry. A fundamental dipole model and;coupled equations of motion are adopted to analytically describe the;experimental results. The emerging states can be predicted by a;fundamental stability criterion based on the excitability of eigenmodes;in the crystal. Micromagnetic simulations give additional insight into;the underlying processes.;2;0;0;0;2;1098-0121;WOS:000332162300008;;;J;Berridge, A. M.;Green, A. G.;Nonequilibrium conductivity at quantum critical points;PHYSICAL REVIEW B;88;22;220512;10.1103/PhysRevB.88.220512;DEC 30 2013;2013;Quantum criticality provides an important route to revealing universal;nonequilibrium behavior. A canonical example of a critical point is the;Bose-Hubbard model, which we study under the application of an electric;field. A Boltzmann transport formalism and is an element of expansion;are used to obtain the nonequilibrium conductivity and current noise.;This approach allows us to explicitly identify how a universal;nonequilibrium steady state is maintained, by identifying the;rate-limiting step in balancing Joule heating and dissipation to a heat;bath. It also reveals that the nonequilibrium distribution function is;very far from a thermal distribution.;1;0;0;0;1;1098-0121;WOS:000332162300004;;;J;Bojesen, Troels Arnfred;Babaev, Egor;Sudbo, Asle;Time reversal symmetry breakdown in normal and superconducting states in;frustrated three-band systems;PHYSICAL REVIEW B;88;22;220511;10.1103/PhysRevB.88.220511;DEC 30 2013;2013;We discuss the phase diagram and phase transitions in U(1) x Z(2);three-band superconductors with broken time reversal symmetry. We find;that beyond mean-field approximation and for sufficiently strong;frustration of interband interactions there appears an unusual metallic;state precursory to a superconducting phase transition. In that state,;the system is not superconducting. Nonetheless, it features a;spontaneously broken Z(2) time reversal symmetry. By contrast, for weak;frustration of interband coupling the energy of a domain wall between;different Z(2) states is low and thus fluctuations restore broken time;reversal symmetry in the superconducting state at low temperatures.;2;0;0;0;2;1098-0121;WOS:000332162300003;;;J;Gracia-Salgado, Rogelio;Garcia-Chocano, Victor M.;Torrent, Daniel;Sanchez-Dehesa, Jose;Negative mass density and rho-near-zero quasi-two-dimensional;metamaterials: Design and applications;PHYSICAL REVIEW B;88;22;224305;10.1103/PhysRevB.88.224305;DEC 30 2013;2013;We report the design and the characterization of artificial structures;made of periodical distributions of structured cylindrical scatterers;embedded in a two-dimensional (2D) waveguide. For certain values of;their geometrical parameters they show simultaneously negative effective;bulk modulus and negative effective mass density. Here our analysis is;focused on the frequencies where they behave like materials with;negative density or density near zero (DNZ). The scattering units;consist of a rigid cylindrical core surrounded by an anisotropic shell;divided in angular sectors. The units are embedded in a 2D waveguide;whose height is smaller than the length of the cylinders, which makes;the structure quasi-2D. We have obtained the dispersion relation of the;surface acoustic waves excited at frequencies with negative effective;density. Also, we report phenomena associated with their DNZ behavior,;such as tunneling through narrow channels, control of the radiation;field, perfect transmission through sharp corners, and power splitting.;Preliminary experiments performed on samples with millimeter-scale;dimensions demonstrated their single-negative behavior, with the main;drawback being the strong losses measured at the frequencies where the;negative behavior is observed.;sanchez-dehesa, jose/L-9726-2014;1;0;0;0;1;1098-0121;WOS:000332162300006;;;J;Klar, D.;Brena, B.;Herper, H. C.;Bhandary, S.;Weis, C.;Krumme, B.;Schmitz-Antoniak, C.;Sanyal, B.;Eriksson, O.;Wende, H.;Oxygen-tuned magnetic coupling of Fe-phthalocyanine molecules to;ferromagnetic Co films;PHYSICAL REVIEW B;88;22;224424;10.1103/PhysRevB.88.224424;DEC 30 2013;2013;The coupling of submonolayer coverages of Fe-phthalocyanine molecules on;bare and oxygen-covered ferromagnetic Co(001) films was studied by;x-ray-absorption spectroscopy, especially the x-ray magnetic circular;dichroism, in combination with density functional theory. We observe;that the magnetic moments of the paramagnetic molecules are aligned even;at room temperature, resulting from a magnetic coupling to the;substrate. While the magnetization of the Fe ions directly adsorbed on;the Co surface is parallel to the magnetization of the Co film, the;introduction of an oxygen interlayer leads to an antiparallel alignment.;As confirmed by theory, the coupling strength is larger for the system;FePc/Co than for FePc/O/Co, causing a stronger temperature dependence of;the Fe magnetization for the latter system. Furthermore, the;calculations reveal that the coupling mechanism changes due to the O;layer from mostly direct exchange to Co of the bare surface to a 180;degrees antiferromagnetic superexchange via the O atoms. Finally, by;comparing the experimental x-ray-absorption spectra at the N K edge with;the corresponding calculations, the contribution of the individual;orbitals has been determined and the two inequivalent N atoms of the;molecules could be distinguished.;Wende, Heiko/J-8505-2012; Schmitz-Antoniak, Carolin/C-2234-2009;Schmitz-Antoniak, Carolin/0000-0002-8450-3515;3;0;0;0;3;1098-0121;WOS:000332162300007;;;J;Moor, Andreas;Volkov, Anatoly F.;Efetov, Konstantin B.;Time-dependent equation for the magnetic order parameter near the;quantum critical point in multiband superconductors with a spin-density;wave;PHYSICAL REVIEW B;88;22;224513;10.1103/PhysRevB.88.224513;DEC 30 2013;2013;Using a simple two-band model for Fe-based pnictides and the generalized;Eilenberger equation, we present a microscopic derivation of a;time-dependent equation for the amplitude of the spin-density wave near;the quantum critical point where it turns to zero. This equation;describes the dynamics of the magnetic (m), as well as the;superconducting order parameter (Delta). It is valid at low temperatures;T and small m (T, m << Delta) in a region of coexistence of both order;parameters, m and Delta. The boundary of this region is found in the;space of the nesting parameter {mu(0), mu(f)}, where mu(0) describes the;relative position of the electron and the hole pockets on the energy;scale and mu(phi) accounts for the ellipticity of the electron pocket.;At low T the number of quasiparticles is small due to the presence of;the energy gap Delta, and therefore the quasiparticles do not play a;role in the relaxation of m. This circumstance allows one to derive the;time-dependent equation for m in contrast to the case of conventional;superconductors for which the time-dependent Ginzburg-Landau equation;can be derived near T-c only in some special cases (high concentration;of paramagnetic impurities) [L. P. Gor'kov and G. M. Eliashberg, Sov.;Phys. JETP 27, 328 (1968)]. In the stationary case the derived equation;is valid at arbitrary temperatures. We find a solution of the stationary;equation which describes a domain wall in the magnetic structure. In the;center of the domain wall the superconducting order parameter has a;maximum, which means a local enhancement of superconductivity. Using the;derived time-dependent equation for m, we investgate also the stability;of a uniform commensurate spin-density wave (SDW) and obtain the values;of {mu(0), mu(f)} at which the first-order transition into the state;with m = 0 takes place or the transition to the state with an;inhomogeneous SDW occurs.;DONOSTIA INTERNATIONAL PHYSICS CTR., DIPC/C-3171-2014;1;0;0;0;1;1098-0121;WOS:000332162300009;;;J;Singh, Yogesh;Tokiwa, Y.;Dong, J.;Gegenwart, P.;Spin liquid close to a quantum critical point in Na4Ir3O8;PHYSICAL REVIEW B;88;22;10.1103/PhysRevB.88.220413;DEC 30 2013;2013;Na4Ir3O8 is a candidate material for a three-dimensional quantum spin;liquid on the hyperkagome lattice. We present thermodynamic measurements;of heat capacity C and thermal conductivity kappa on high-quality;polycrystalline samples of Na4Ir3O8 down to T = 500 and 75 mK,;respectively. Absence of long-range magnetic order down to T = 75 mK;strongly supports claims of a spin-liquid ground state. The constant;magnetic susceptibility chi below T approximate to 25 K and the presence;of a small but finite linear-T term in C(T) suggest the presence of;gapless spin excitations. Additionally, the magnetic Gruneisen ratio;shows a divergence as T -> 0 K and a scaling behavior, which clearly;demonstrates that Na4Ir3O8 is situated close to a zero-field QCP.;Dong, Jinkui/J-3603-2013;2;0;0;0;2;1098-0121;WOS:000332162300002;;;J;Taen, Toshihiro;Ohtake, Fumiaki;Akiyama, Hiroki;Inoue, Hiroshi;Sun, Yue;Pyon, Sunseng;Tamegai, Tsuyoshi;Pair-breaking effects induced by 3-MeV proton irradiation in;Ba1-xKxFe2As2;PHYSICAL REVIEW B;88;22;224514;10.1103/PhysRevB.88.224514;DEC 30 2013;2013;Pair-breaking effects induced by 3-MeV proton irradiations are examined;in underdoped, optimally doped, and overdoped Ba1-xKxFe2As2 single;crystals in terms of suppression of the superconducting critical;temperature T-c. The small residual resistivity (RR) in as-grown;crystals shows the presence of negligible intrinsic scatterings, which;makes this material a model system for studying the effect of;artificially introduced scatterings. The RR and Tc change linearly with;the proton dose. As in the case of proton irradiation in Co-doped;BaFe2As2, we do not detect any low-temperature upturns in resistivity;attributable to magnetic scattering or localization. Regardless of K;doping levels, the critical value of the normalized scattering rate is;much higher than that expected in s(perpendicular to)-wave;superconductors.;悦, å™/B-1373-2013;悦, å™/0000-0002-5189-5460;3;0;0;0;3;1098-0121;WOS:000332162300010;;;J;Yan, Ming;Kakay, Attila;Andreas, Christian;Hertel, Riccardo;Spin-Cherenkov effect and magnonic Mach cones;PHYSICAL REVIEW B;88;22;220412;10.1103/PhysRevB.88.220412;DEC 30 2013;2013;We report on the Cherenkov-type excitation of spin waves (SWs) in;ferromagnets. Our micromagnetic simulations show that a localized;magnetic field pulse moving sufficiently fast along the surface of a;ferromagnet generates a SW boom, with a Mach-type cone of propagating;wave fronts. The SWs are formed when the velocity of the source exceeds;the propagation speed of SWs. Unlike the single cone of the usual;Cherenkov effect, we find that the magnetic Mach cone consists of two;wave fronts with different wave numbers. In patterned thin strips, this;magnetic analog of the Cherenkov effect should enable the excitation of;SWs with well-defined and velocity-dependent frequency. It thereby;provides a promising route towards tunable SW generation, with important;potential for applications in magnonic devices.;2;0;0;0;2;1098-0121;WOS:000332162300001;;;J;Yang, Lusann;Ceder, Gerbrand;Data-mined similarity function between material compositions;PHYSICAL REVIEW B;88;22;224107;10.1103/PhysRevB.88.224107;DEC 30 2013;2013;A new method for assessing the similarity of material compositions is;described. A similarity measure is important for the classification and;clustering of compositions. The similarity of the material compositions;is calculated utilizing a data-mined ionic substitutional similarity;based upon the probability with which two ions will substitute for each;other within the same structure prototype. The method is validated via;the prediction of crystal structure prototypes for oxides from the;Inorganic Crystal Structure Database, selecting the correct prototype;from a list of known prototypes within five guesses 75% of the time. It;performs particularly well on the quaternary oxides, selecting the;correct prototype from a list of known prototypes on the first guess 65%;of the time.;1;0;0;0;1;1098-0121;WOS:000332162300005;;;J;Bartelt, Norman C.;Nie, Shu;Starodub, Elena;Bernal-Villamil, Ivan;Gallego, Silvia;Vergara, Lucia;McCarty, Kevin F.;de la Figuera, Juan;Order-disorder phase transition on the (100) surface of magnetite;PHYSICAL REVIEW B;88;23;235436;10.1103/PhysRevB.88.235436;DEC 30 2013;2013;Using low-energy electron diffraction, we show that the room-temperature;(root 2 x root 2) R45 degrees reconstruction of Fe3O4(100) reversibly;disorders at similar to 450 degrees C. Short-range order persists above;the transition, suggesting that the transition is second order and;Ising-like. We interpret the transition in terms of a model in which;subsurface Fe3+ is replaced by Fe2+ as the temperature is raised. This;model reproduces the structure of antiphase boundaries previously;observed with scanning tunneling microscopy, as well as the continuous;nature of the transition. To account for the observed transition;temperature, the energy cost of each charge rearrangement is 82 meV.;de la Figuera, Juan/E-7046-2010; Gallego Queipo, Silvia/J-3411-2012;de la Figuera, Juan/0000-0002-7014-4777;;1;0;0;0;1;1098-0121;WOS:000332163500007;;;J;Cazorla, Claudio;Iniguez, Jorge;Insights into the phase diagram of bismuth ferrite from quasiharmonic;free-energy calculations;PHYSICAL REVIEW B;88;21;214430;10.1103/PhysRevB.88.214430;DEC 30 2013;2013;We have used first-principles methods to investigate the phase diagram;of multiferroic bismuth ferrite (BiFeO3 or BFO), revealing the energetic;and vibrational features that control the occurrence of various relevant;structures. More precisely, we have studied the relative stability of;four low-energy BFO polymorphs by computing their free energies within;the quasiharmonic approximation, introducing a practical scheme that;allows us to account for the main effects of spin disorder. As expected,;we find that the ferroelectric ground state of the material (with R3c;space group) transforms into an orthorhombic paraelectric phase (Pnma);upon heating. We show that this transition is not significantly affected;by magnetic disorder, and that the occurrence of the Pnma structure;relies on its being vibrationally (although not elastically) softer than;the R3c phase. We also investigate a representative member of the family;of nanotwinned polymorphs recently predicted for BFO [S. Prosandeev et;al., Adv. Funct. Mater. 23, 234 (2013)] and discuss their possible;stabilization at the boundaries separating the R3c and Pnma regions in;the corresponding pressure-temperature phase diagram. Finally, we;elucidate the intriguing case of the so-called supertetragonal phases of;BFO: Our results explain why such structures have never been observed in;the bulk material, despite their being stable polymorphs of very low;energy. Quantitative comparison with experiment is provided whenever;possible, and the relative importance of various physical effects;(zero-point motion, spin fluctuations, thermal expansion) and technical;features (employed exchange-correlation energy density functional) is;discussed. Our work attests the validity and usefulness of the;quasiharmonic scheme to investigate the phase diagram of this complex;oxide, and prospective applications are discussed.;Iniguez, Jorge/B-6856-2009;Iniguez, Jorge/0000-0001-6435-3604;0;0;0;0;0;1098-0121;WOS:000332161300005;;;J;Chandrasekaran, Anand;Damjanovic, Dragan;Setter, Nava;Marzari, Nicola;Defect ordering and defect-domain-wall interactions in PbTiO3: A;first-principles study;PHYSICAL REVIEW B;88;21;214116;10.1103/PhysRevB.88.214116;DEC 30 2013;2013;The properties of ferroelectric materials, such as lead zirconate;titanate (PZT), are heavily influenced by the interaction of defects;with domain walls. These defects are either intrinsic or are induced by;the addition of dopants. We study here PbTiO3 (the end member of a key;family of solid solutions) in the presence of acceptor (Fe) and donor;(Nb) dopants, and the interactions of the different defects and defect;associates with the domain walls. For the case of iron acceptors, the;calculations point to the formation of defect associates involving an;iron substitutional defect and a charged oxygen vacancy (Fe-Ti'-V-O '').;This associate exhibits a strong tendency to align in the direction of;the bulk polarization; in fact, ordering of defects is also observed in;pure PbTiO3 in the form of lead-oxygen divacancies. Conversely,;calculations on donor-doped PbTiO3 do not indicate the formation of;polar defect complexes involving donor substitutions. Last, it is;observed that both isolated defects in donor-doped materials and defect;associates in acceptor-doped materials are more stable at 180 degrees.;domain walls. However, polar defect complexes lead to asymmetric;potentials at domain walls due to the interaction of the defect;polarization with the bulk polarization. The relative pinning;characteristics of different defects are then compared, to develop an;understanding of defect-domain-wall interactions in both doped and pure;PbTiO3. These results may also help in understanding hardening and;softening mechanisms in PZT.;Damjanovic, Dragan/A-8231-2008;Damjanovic, Dragan/0000-0002-9596-7438;3;1;0;0;3;1098-0121;WOS:000332161300002;;;J;Choi, Minseok;Janotti, Anderson;Van de Walle, Chris G.;Native point defects in LaAlO3: A hybrid functional study;PHYSICAL REVIEW B;88;21;214117;10.1103/PhysRevB.88.214117;DEC 30 2013;2013;We investigate the electronic structure of defects in LaAlO3 (LAO) and;their effects on electronic properties of bulk and heterostructures. Our;calculations indicate that vacancies have lower formation energies than;interstitials and antisites. The La vacancy (V-La) and the Al vacancy;(V-Al) are deep acceptors, while the oxygen vacancy (VO) is a deep;donor. The impact of these defects on the performance of;metal-oxide-semiconductor devices is analyzed by placing the LAO band;edges and defect levels with respect to the band edges of GaN, InGaAs,;and Si. V-O introduces levels in the gap or in the vicinity of the;semiconductor conduction band, resulting in carrier traps and/or leakage;current through the gate oxide, while V-La and V-Al are sources of;negative fixed charges. We also discuss how oxygen vacancies in LAO can;influence the observed two-dimensional electron gas (2DEG) in;LaAlO3/SrTiO3 heterostructures. We conclude that V-O in the LAO layer;may provide electrons that fill compensating surface states, resulting;in higher 2DEG densities, at least for modest LAO layer thicknesses.;Van de Walle, Chris/A-6623-2012;Van de Walle, Chris/0000-0002-4212-5990;4;0;0;0;4;1098-0121;WOS:000332161300003;;;J;Haham, Noam;Konczykowski, Marcin;Kuiper, Bouwe;Koster, Gertjan;Klein, Lior;Testing dependence of anomalous Hall effect on resistivity in SrRuO3 by;its increase with electron irradiation;PHYSICAL REVIEW B;88;21;214431;10.1103/PhysRevB.88.214431;DEC 30 2013;2013;We measure the anomalous Hall effect (AHE) in several patterns of the;itinerant ferromagnet SrRuO3 before and after the patterns are;irradiated with electrons. The irradiation increases the resistivity of;the patterns due to the introduction of point defects and we find that;the AHE coefficient R-s scales with the total resistivity before and;after irradiation which indicates that the AHE is determined by the;total resistivity. We discuss possible origins of slight deviations from;scaling that are observed at low temperature, particularly below 70 K.;0;0;0;0;0;1098-0121;WOS:000332161300006;;;J;Heinhold, R.;Williams, G. T.;Cooil, S. P.;Evans, D. A.;Allen, M. W.;Influence of polarity and hydroxyl termination on the band bending at;ZnO surfaces;PHYSICAL REVIEW B;88;23;235315;10.1103/PhysRevB.88.235315;DEC 30 2013;2013;Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and;real-time in situ XPS were used to study the thermal stability of the;hydroxyl termination and downward band bending on the polar surfaces of;ZnO single crystals. On the O-polar face, the position of the Fermi;level could be reversibly cycled between the conduction band and the;band gap over an energetic distance of approximately 0.8 eV (similar to;1/4 of the band gap) by controlling the surface H coverage using simple;ultrahigh vacuum (UHV) heat treatments up to 750 degrees C, dosing with;H2O/H-2 and atmospheric exposure. A metallic to semiconductorlike;transition in the electronic nature of the O-polar face was observed at;an H coverage of approximately 0.9 monolayers. For H coverage less than;this, semiconducting (depleted) O-polar surfaces were created that were;reasonably stable in UHV conditions. In contrast, the downward band;bending on the Zn-polar face was significantly more resilient, and;depleted surfaces could not be prepared by heat treatment alone.;3;0;0;0;3;1098-0121;WOS:000332163500005;;;J;Levy, Peter M.;Yang, Hongxin;Chshiev, Mairbek;Fert, Albert;Spin Hall effect induced by Bi impurities in Cu: Skew scattering and;side-jump;PHYSICAL REVIEW B;88;21;214432;10.1103/PhysRevB.88.214432;DEC 30 2013;2013;The spin Hall effect (SHE) has recently turned out to be an interesting;tool for the conversion between charge and spin currents, the conversion;factor being characterized by the spin Hall angle Phi(H). Large spin;Hall angles have been now measured in heavy metals like W(Phi(H) =;-0.33) and Cu doped with Bi impurities (Phi(H) = -0.24). In this article;we express the contributions to the SHE induced by skew scattering and;scattering with side-jump from Bi impurities in Cu, and we use ab initio;calculations of the electronic structure of CuBi alloys to estimate the;values of these two contributions. The predominant effect comes from;skew scattering; the spin Hall angle is negative in agreement with;experiments, but the calculated amplitude is smaller.;Chshiev, Mairbek/A-9742-2008; Yang, HongXin/H-5719-2012;Chshiev, Mairbek/0000-0001-9232-7622;;0;0;0;0;0;1098-0121;WOS:000332161300007;;;J;Lu, Wenlai;Yang, Ping;Song, Wen Dong;Chow, Gan Moog;Chen, Jing Sheng;Control of oxygen octahedral rotations and physical properties in SrRuO3;films;PHYSICAL REVIEW B;88;21;214115;10.1103/PhysRevB.88.214115;DEC 30 2013;2013;Control of octahedral rotations in the ABO(3) perovskite oxides has been;of great interest due to its potential in rationally discovering and;designing new multifunctional phases. In this study, we show that;octahedral rotations of the SrRuO3 films can be controlled by oxygen;vacancies as well as by interfacial coupling, which further determines;the physical properties. Half-integer reflections using high-resolution;synchrotron x-ray diffraction were carried out to determine the;octahedral rotation pattern of SrRuO3 films on SrTiO3 substrates. The;transition of RuO6 rotation pattern accompanied by the structural change;from monoclinic P2(1)/m to tetragonal F4/mmc can be understood from the;preference of oxygen vacancies in the SrO atomic plane and the coupling;of octahedra across the interface between film and substrate. The field;angle dependence of magnetoresistance further confirmed the structural;phase transition with changes in octahedral rotations. The monoclinic;phase has the uniaxial magnetic easy axis 30 away from the [001];direction towards the [010] direction while the tetragonal phase has;uniaxial magnetic easy axis along the fourfold axis which is;perpendicular to the film surface. This study demonstrates the ability;to control the octahedral rotations in perovskite films and its;importance when designing thin films and multilayers with desired;functional property.;Chen, Jingsheng/D-9107-2011; Yang, Ping/C-5612-2008;1;0;0;0;1;1098-0121;WOS:000332161300001;;;J;Marcano, N.;Algarabel, P. A.;Rodriguez Fernandez, J.;Magen, C.;Morellon, L.;Singh, Niraj K.;Gschneidner, K. A., Jr.;Pecharsky, V. K.;Ibarra, M. R.;Effects of pressure on the magnetic-structural and Griffiths-like;transitions in Dy5Si3Ge;PHYSICAL REVIEW B;88;21;214429;10.1103/PhysRevB.88.214429;DEC 30 2013;2013;Magnetization studies have been performed on a polycrystalline sample of;Dy5Si3Ge as a function of an applied magnetic field (up to 50 kOe) and;hydrostatic pressure (up to 10 kbar) in the 5-300 K temperature range.;The anomalous behavior of the magnetic susceptibility indicates that a;Griffiths-like phase exists at low magnetic fields and pressures up to;10 kbar. We present evidence that the high-temperature second-order;ferromagnetic transition can be coupled with the low-temperature;first-order crystallographic transformation into a single first-order;magnetic-crystallographic transformation using a magnetic field and;hydrostatic pressure as tuning parameters. The effect of pressure on the;Griffiths-like phase is reported and analyzed in the framework of the;complex competition between the interslab and intraslab magnetic;interactions.;Magen, Cesar/A-2825-2013; Morellon, Luis/K-6922-2014; Marcano Aguado, Noelia/F-9446-2010;
10:635:6 Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on alpha-Al2O3
DOI:10.1007/s11664-010-1251-z JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:1 AU: Hullavarad, S. S.;Hullavarad, N. V.;Vispute, R. D.;Venkatesan, T.;Kilpatrick, S. J.;Ervin, M. H.;Nichols, B.;Wickenden, A. E.;
10:636:1 Influence of cooling rate on optical properties and electrical properties of nanorod ZnO films
DOI:10.1016/j.jallcom.2010.03.236 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:12 AU: Gao, Meizhen;Liu, Jing;Sun, Huina;Wu, Xiaonan;Xue, Desheng;
10:636:2 Synthesis of submicron rhombic ZnO rods via ZnOHF intermediate using electrodeposition route
DOI:10.1016/j.apsusc.2010.11.081 JN:APPLIED SURFACE SCIENCE PY:2011
TC:14 AU: Dai, Min;Xu, Feng;Lu, Yinong;Liu, Yunfei;Xie, Yan;
10:636:3 High electro-catalytic activities of glucose oxidase embedded one-dimensional ZnO nanostructures
DOI:10.1088/0957-4484/24/22/225502 JN:NANOTECHNOLOGY PY:2013
TC:2 AU: Sarkar, Nirmal K.;Bhattacharyya, Swapan K.;
10:636:4 Tuned synthesis of novel 3D mesoscopic ZnO crystals using buffer layer assisted grown catalysts
DOI:10.1063/1.4813524 JN:AIP ADVANCES PY:2013
TC:0 AU: Shehzad, M. A.;Hafeez, M.;Rehman, S.;Bhatti, A. S.;
10:636:5 Facile fabrication of Zn/Zn-5(OH)(8)Cl-2 center dot H2O flower-like nanostructure on the surface of Zn coated with poly (N-methyl pyrrole)
DOI:10.1016/j.apsusc.2011.07.046 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Mahmoudian, M. R.;Basirun, W. J.;Alias, Y.;Ebadi, M.;
10:636:6 Synthesis and Characterization of ZnO Nanorods Based on a New Gel Pyrolysis Method
DOI:10.1155/2011/628203 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:4 AU: Karami, Hassan;Fakoori, Elham;
10:637:1 Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO2/Si using nanoimprint lithography
DOI:10.1088/0957-4484/23/31/315303 JN:NANOTECHNOLOGY PY:2012
TC:8 AU: Buyukkose, S.;Vratzov, B.;Atac, D.;van der Veen, J.;Santos, P. V.;van der Wiel, W. G.;
10:637:2 High-frequency acoustic charge transport in GaAs nanowires
DOI:10.1088/0957-4484/25/13/135204 JN:NANOTECHNOLOGY PY:2014
TC:2 AU: Buyukkose, S.;Hernandez-Minguez, A.;Vratzov, B.;Somaschini, C.;Geelhaar, L.;Riechert, H.;van der Wiel, W. G.;Santos, P. V.;
10:637:3 Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon
DOI:10.1063/1.4774388 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Buyukkose, S.;Vratzov, B.;van der Veen, J.;Santos, P. V.;van der Wiel, W. G.;
10:637:4 Ambipolar acoustic transport in silicon
DOI:10.1063/1.4733966 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Barros, A. D.;Batista, P. D.;Tahraoui, A.;Diniz, J. A.;Santos, P. V.;
10:637:5 High-quality global hydrogen silsequioxane contact planarization for nanoimprint lithography
DOI:10.1116/1.3562939 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:6 AU: Buyukkose, Serkan;Vratzov, Boris;van der Wiel, Wilfred G.;
10:637:6 Electronic channels for acoustic transport in semiconductor heterostructures
DOI:10.1063/1.3407672 JN:APPLIED PHYSICS LETTERS PY:2010
TC:3 AU: Biermann, K.;Couto, O. D. D., Jr.;Seidel, W.;Hey, R.;Santos, P. V.;
10:637:7 Embedded ultrasound sensor in a silicon-on-insulator photonic platform
DOI:10.1063/1.4860983 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Rosenthal, Amir;Omar, Murad;Estrada, Hector;Kellnberger, Stephan;Razansky, Daniel;Ntziachristos, Vasilis;
10:638:1 Functionalised ZnO-nanorod-based selective electrochemical sensor for intracellular glucose
DOI:10.1016/j.bios.2010.02.025 JN:BIOSENSORS & BIOELECTRONICS PY:2010
TC:50 AU: Asif, Muhammad H.;Ali, Syed M. Usman;Nur, Omer;Willander, Magnus;Brannmark, Cecilia;Stralfors, Peter;Englund, Ulrika H.;Elinder, Fredrik;Danielsson, Bengt;
10:638:2 Screen printed ZnO ultraviolet photoconductive sensor on pencil drawn circuitry over paper
DOI:10.1063/1.4720179 JN:APPLIED PHYSICS LETTERS PY:2012
TC:10 AU: ul Hasan, Kamran;Nur, Omer;Willander, Magnus;
10:638:3 Zinc oxide inverse opal electrodes modified by glucose oxidase for electrochemical and photoelectrochemical biosensor
DOI:10.1016/j.bios.2014.03.038 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:9 AU: Xia, Lei;Song, Jian;Xu, Ru;Liu, Dali;Dong, Biao;Xu, Lin;Song, Hongwei;
10:638:4 A vacuum pressure sensor based on ZnO nanobelt film
DOI:10.1088/0957-4484/22/43/435501 JN:NANOTECHNOLOGY PY:2011
TC:9 AU: Zheng, X. J.;Cao, X. C.;Sun, J.;Yuan, B.;Li, Q. H.;Zhu, Z.;Zhang, Y.;
10:638:5 Functionalized ZnO nanorod-based selective magnesium ion sensor for intracellular measurements
DOI:10.1016/j.bios.2010.08.017 JN:BIOSENSORS & BIOELECTRONICS PY:2010
TC:15 AU: Asif, Muhammad H.;Ali, Syed M. Usman;Nur, Omer;Willander, Magnus;Englund, Ulrika H.;Elinder, Fredrik;
10:638:6 An amperometric urea bisosensor based on covalent immobilization of urease on N-2 incorporated diamond nanowire electrode
DOI:10.1016/j.bios.2013.11.071 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:3 AU: Shalini, Jayakumar;Sankaran, Kamatchi Jothiramalingam;Lee, Chi-Young;Tai, Nyan-Hwa;Lin, I-Nan;
10:639:1 Copper-induced crystallization of sputtered silicon on ZnO:Al substrate and the textured interface for light trapping
DOI:10.1016/j.apsusc.2011.06.084 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Zhao, Yong;Wang, Jian;Hu, Qiang;Zhu, Dan;Li, Dejie;
10:639:2 Nano-textured topography introduced at room temperature for light-trapping enhancement
DOI:10.1016/j.solmat.2011.06.035 JN:SOLAR ENERGY MATERIALS AND SOLAR CELLS PY:2011
TC:5 AU: Hu, Qiang;Wang, Jian;Zhao, Yong;Li, Dejie;
10:639:3 Improved anti-reflective properties of amorphous silicon films deposited on Al nanoconcave arrays
DOI:10.1016/j.matlet.2014.07.168 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Norek, Malgorzata;Wlodarski, Maksymilian;Nyga, Piotr;Budner, Boguslaw;Siemiaszko, Dariusz;
10:639:4 Highly crystallized sputtered silicon with textured morphology for thin-film solar cells
DOI:10.1016/j.apsusc.2011.01.006 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Hu, Qiang;Wang, Jian;Zhao, Yong;Li, Dejie;
10:639:5 Crystallization of sputtered amorphous silicon induced by silver-copper alloy with high crystalline volume ratio
DOI:10.1016/j.jcrysgro.2010.09.068 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:5 AU: Zhao, Yong;Wang, Jian;Hu, Qiang;Li, Dejie;
10:639:6 Surface modification of doped ZnO thin films
DOI:10.1016/j.apsusc.2010.03.033 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Flickyngerova, S.;Skriniarova, J.;Netrvalova, M.;Kovac, J., Jr.;Novotny, I.;Suttab, P.;Tvarozeka, V.;
10:640:1 Characterization of electrical and optical absorption of organic based methyl orange for photovoltaic application
DOI:10.1016/j.synthmet.2011.08.015 JN:SYNTHETIC METALS PY:2011
TC:5 AU: Farag, A. A. M.;Mansour, A. M.;Ammar, A. H.;Rafea, M. Abdel;
10:640:2 Enhancement of photovoltaic characteristics of nanocrystalline 2,3-naphthalocyanine thin film-based organic devices
DOI:10.1016/j.apsusc.2012.07.083 JN:APPLIED SURFACE SCIENCE PY:2012
TC:1 AU: Farag, A. A. M.;Osiris, W. G.;Ammar, A. H.;
10:640:3 Optical, electrical and photovoltaic properties of thermally evaporated 3-amino-2-[(2-nitrophenyl)diazinyl]-3-(piperidin-1-yl)acrylonitrile thin films
DOI:10.1016/j.mssp.2013.06.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:5 AU: El-Menyawy, E. M.;Elagamey, A. A.;Elgogary, S. R.;Abu El-Enein, R. A. N.;
10:640:4 Annealing effects on electrical, optical and structural properties of semiconducting transparent tetra-tert-butyl 2,3 naphthalocyanine thinfilms
DOI:10.1016/j.jnoncrysol.2011.06.034 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:1 AU: Dhanya, I.;Menon, C. S.;
10:640:5 Extraction of electronic parameters of organic diode fabricated with NIR absorbing functional manganase phthalocyanine organic semiconductor
DOI:10.1016/j.synthmet.2011.04.006 JN:SYNTHETIC METALS PY:2011
TC:9 AU: Gunsel, Armagan;Kandaz, Mehmet;Yakuphanoglu, Fahrettin;Farooq, W. A.;
10:640:6 Low temperature effects on electrical and optical properties of TTBNc thin films
DOI:10.1016/j.jnoncrysol.2009.12.007 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:2 AU: Dhanya, I.;Gopinathan, T. G.;Panicker, Nisha S.;Menon, C. S.;
10:641:1 Local structures and concentration dependence of magnetic properties in Cr- and Mn-doped amorphous silicon ferromagnetic thin films
DOI:10.1103/PhysRevB.81.104104 JN:PHYSICAL REVIEW B PY:2010
TC:9 AU: Soo, Y. L.;Yao, J. H.;Wang, C. S.;Chang, S. L.;Hsieh, C. A.;Lee, J. F.;Chin, T. S.;
10:641:2 Confinement and integration of magnetic impurities in silicon
DOI:10.1063/1.4792350 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Ruess, Frank J.;El Kazzi, Mario;Czornomaz, Lukas;Mensch, Philipp;Hopstaken, Marinus;Fuhrer, Andreas;
10:641:3 Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor
DOI:10.1063/1.3691173 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Yao, Jia-Hsien;Lin, Hsiu-Hau;Soo, Yun-Liang;Wu, Tai-Sing;Tsai, Jai-Lin;Lan, Ming-Der;Chin, Tsung-Shune;
10:641:4 Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates
DOI:10.1063/1.3638701 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:5 AU: Yada, Shinsuke;Pham Nam Hai;Sugahara, Satoshi;Tanaka, Masaaki;
10:641:5 High magnetoelectric tuning effect in a polymer-based magnetostrictive-piezoelectric laminate under resonance drive
DOI:10.1063/1.3678321 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Duan, Yuan-Feng;Leung, Chung Ming;Zhang, Shengyao;Zhang, Long;Or, Siu Wing;
10:641:6 Analysis on the local structure and its implication on the magnetic properties of Si1-xMnx thin films
DOI:10.1016/j.mssp.2014.01.014 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Li, Tiecheng;Guo, Liping;Liu, Congxiao;Chen, Jihong;Peng, Guoliang;Luo, Fengfeng;Jiang, Zheng;Huang, Yuying;
10:641:7 Effect of annealing temperature on magnetic property of Si1-xCrx thin films
DOI:10.1016/j.tsf.2011.01.350 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Zhang, Wenyong;Guo, Liping;Peng, Guoliang;Li, Tiecheng;Feng, Shixuan;Zhou, Zhongpo;Peng, Ting;Quan, Zuci;
10:641:8 Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing
DOI:10.1016/j.apsusc.2011.04.133 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Yang, Shuang;Zhang, Wenyong;Chen, Jihong;Zhou, Zhongpo;Ai, Zhiwei;Guo, Liping;Liu, Congxiao;Du, Honglin;
10:641:9 Influence of background carriers on magnetic properties of Mn-doped dilute magnetic Si
DOI:10.1016/j.jmmm.2012.06.010 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:2 AU: Mukhopadhyay, S.;Harrison, Nicholas M.;
10:642:1 Ferromagnetic anisotropy of carbon-doped ZnO nanoneedles fabricated by ion beam technique
DOI:10.1016/j.apsusc.2012.02.048 JN:APPLIED SURFACE SCIENCE PY:2012
TC:9 AU: Wei, C. S.;Lau, S. P.;Tanemura, M.;Subramanian, M.;Akaike, Y.;
10:642:2 Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO
DOI:10.1016/j.apsusc.2013.06.098 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Mishra, D. K.;Mohapatra, Jyoshnarani;Mahato, Banashree;Kumar, P.;Mitra, Amitav;Singh, S. K.;Kanjilal, D.;
10:642:3 Post-Annealing Treatments and Interface Effects on Anomalous Magnetic Characteristics of HfOx Film
DOI:10.1080/10584587.2013.787673 JN:INTEGRATED FERROELECTRICS PY:2013
TC:0 AU: Qiu, X. Y.;Li, J.;Chen, P.;Zhang, Y.;Tu, Y. T.;Wang, X. H.;Lu, W.;
10:642:4 Interplay of defects in 1.2 MeV Ar irradiated ZnO
DOI:10.1063/1.3429081 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:16 AU: Chattopadhyay, Soubhik;Dutta, Sreetama;Jana, D.;Chattopadhyay, S.;Sarkar, A.;Kumar, P.;Kanjilal, D.;Mishra, D. K.;Ray, S. K.;
10:642:5 Temperature-dependent ferromagnetic behavior in nanocrystalline ZnO synthesized by pyrophoric technique
DOI:10.1016/j.matlet.2014.08.109 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Routray, U.;Dash, R.;Mohapatra, J. R.;Das, J.;Srinivasu, V. V.;Mishra, D. K.;
10:642:6 Channeled PIXE and magnetic measurements in Co implanted and thermally annealed ZnO single crystals
DOI:10.1016/j.apsusc.2014.03.104 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Werner, Z.;Ratajczak, R.;Gosk, J.;Barlak, M.;Twardowski, A.;Pochrybniak, C.;Zhao, Q.;
10:642:7 Weak Ferromagnetism of HfO2 Film on Compressively Strained Si83Ge17/Si Substrate
DOI:10.1080/10584587.2012.663647 JN:INTEGRATED FERROELECTRICS PY:2012
TC:1 AU: Tu, Y. T.;Zhou, G. D.;Dai, J. Y.;Li, J.;Chen, P.;Qiu, X. Y.;
10:642:8 Unusual ferromagnetism in high purity ZnO sintered ceramics
DOI:10.1016/j.materresbull.2010.09.040 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:3 AU: Das, J.;Pradhan, S. K.;Mishra, D. K.;Sahu, D. R.;Sarangi, S.;Varma, S.;Nayak, B. B.;Huang, Jow-Lay;Roul, B. K.;
10:643:1:1 Effects of precursor, temperature, surface area and excitation wavelength on photoluminescence of ZnO/mesoporous silica nanocomposite
DOI:10.1016/j.ceramint.2012.09.085 JN:CERAMICS INTERNATIONAL PY:2013
TC:5 AU: Babu, K. Sowri;Reddy, A. Ramachandra;Sujatha, Ch.;Reddy, K. Venugopal;
10:643:1:2 Confinement of zinc oxide nanoparticles in ordered mesoporous silica MCM-41
DOI:10.1016/j.matchemphys.2012.01.106 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:10 AU: Lihitkar, P. B.;Violet, Samuel;Shirolkar, Mandar;Singh, Jai;Srivastava, O. N.;Naik, R. H.;Kulkarni, S. K.;
10:643:1:3 Characterization of mesoporous ZnO:SiO2 films obtained by the sol-gel method
DOI:10.1016/j.tsf.2010.06.015 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Martins, R. M. S.;Musat, V.;Muecklich, A.;Franco, N.;Fortunato, E.;
10:643:2:1 Controlling the photoluminescence of ZnO:Si nano-composite films by heat-treatment
DOI:10.1016/j.materresbull.2010.06.049 JN:MATERIALS RESEARCH BULLETIN PY:2010
TC:4 AU: Shabnam;Kant, Chhaya Ravi;Arun, P.;
10:643:2:2 Size and defect related broadening of photoluminescence spectra in ZnO:Si nanocomposite films
DOI:10.1016/j.materresbull.2011.11.028 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Shabnam;Kant, Chhaya Ravi;Arun, P.;
10:643:2:3 Film thickness controlled photoluminescence emission in ZnO:Si nanocomposite
DOI:10.1016/j.optmat.2012.08.007 JN:OPTICAL MATERIALS PY:2012
TC:0 AU: Shabnam;Kant, Chhaya Ravi;Arun, P.;
10:643:2:4 Controlling the photoluminescence of ZnO:Si nano-composite films by heat-treatment (vol 45, pg 1368, 2010)
DOI:10.1016/j.materresbull.2011.02.001 JN:MATERIALS RESEARCH BULLETIN PY:2011
TC:0 AU: Shabnam;Kant, Chhaya Ravi;Arun, P.;
10:643:3:1 Effect of Mg doping on photoluminescence of ZnO/MCM-41 nanocompo site
DOI:10.1016/j.ceramint.2012.04.047 JN:CERAMICS INTERNATIONAL PY:2012
TC:7 AU: Babu, K. Sowri;Reddy, A. Ramachandra;Sujatha, Ch;Reddy, K. Venugopal;
10:644:1 Room temperature ferromagnetism in Mg-doped AlN semiconductor films
DOI:10.1016/j.matlet.2013.12.018 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Xiong, Juan;Guo, Peng;Guo, Fei;Sun, Xiliang;Gu, Haoshuang;
10:644:2 Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN
DOI:10.1103/PhysRevB.85.075207 JN:PHYSICAL REVIEW B PY:2012
TC:3 AU: Liu, Y.;Gai, Z.;Weinert, M.;Li, L.;
10:644:3 Cu-doped nitrides: Promising candidates for a nitride based spin-aligner
DOI:10.1016/j.jcrysgro.2010.10.115 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:4 AU: Ganz, P. R.;Fischer, G.;Suergers, C.;Schaadt, D. M.;
10:644:4 Electron standing waves on the GaN(0001)-pseudo (1 x 1) surface: a FT-STM study at room temperature
DOI:10.1088/0957-4484/21/43/435401 JN:NANOTECHNOLOGY PY:2010
TC:6 AU: Sun, G. F.;Liu, Y.;Qi, Y.;Jia, J. F.;Xue, Q. K.;Weinert, M.;Li, L.;
10:644:5 Spiral growth and formation of stacking faults and vacancy islands during molecular beam epitaxy of InN on GaN(0001)
DOI:10.1088/0957-4484/22/42/425707 JN:NANOTECHNOLOGY PY:2011
TC:0 AU: Liu, Y.;Li, L.;
10:644:6 Non-steady-state photoelectromotive force in an AlN crystal
DOI:10.1103/PhysRevB.86.085209 JN:PHYSICAL REVIEW B PY:2012
TC:2 AU: Bryushinin, M.;Kulikov, V.;Mokhov, E.;Nagalyuk, S.;Sokolov, I.;
10:644:7 Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy
DOI:10.1016/j.apsusc.2014.08.112 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Shah, A.;Ahmad, Jamil;Ahmad, Ishaq;Mehmood, Mazhar;Mahmood, Arshad;Rasheed, Muhammad Asim;
10:645:1 Theoretical investigation of EPR and optical spectra of Mo(V) in [Mo6O19][N(C4H9)(4)](3) salt
DOI:10.1016/j.jmmm.2012.07.015 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:6 AU: Feng, Wen-Lin;
10:645:2 A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb3+ in InP semiconductor
DOI:10.1016/j.jallcom.2011.02.112 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Feng, Wen-Lin;Zheng, Wen-Chen;Liu, Hong-Gang;Li, X. M.;
10:645:3 Ab initio calculations of structural, electronic, optical, and elastic properties of pure and Yb-doped InP at varying pressure
DOI:10.1063/1.3514075 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Brik, M. G.;Kaminska, A.;Suchocki, A.;
10:645:4 An optional explanation for nickel sites of nickel-zinc phosphate glasses by their optical spectra and EPR g factor
DOI:10.1016/j.jmmm.2011.06.027 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:4 AU: Feng, W. L.;Pu, L. C.;Yang, X. Z.;Hu, N.;
10:645:5 Spectroscopy of ytterbium-doped InP under high hydrostatic pressure
DOI:10.1103/PhysRevB.81.165209 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Kaminska, A.;Kozanecki, A.;Trushkin, S.;Suchocki, A.;
10:645:6 EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal
DOI:10.1016/j.jmmm.2010.10.003 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:14 AU: Feng, W. L.;Li, X. M.;Zheng, W. C.;Yang, Y. G.;Yang, W. Q.;
10:645:7 Investigations of the spin-Hamiltonian parameters for Yb3+in the tetragonal phase of SrTiO3 crystal
DOI:10.1080/14786431003745278 JN:PHILOSOPHICAL MAGAZINE PY:2010
TC:17 AU: Zheng, W. C.;Liu, H. G.;Yang, W. Q.;Li, B. X.;
10:645:8 EPR and optical studies of VO2+ doped diglycine calcium chloride tetrahydrate single crystals
DOI:10.1016/j.jallcom.2009.09.175 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Kripal, Ram;Bajpai, Manisha;
10:646:1 Characterization of Zn1-xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering
DOI:10.1016/j.tsf.2009.09.196 JN:THIN SOLID FILMS PY:2010
TC:18 AU: Maejima, K.;Shibata, H.;Tampo, H.;Matsubara, K.;Niki, S.;
10:646:2 Growth of highly c-axis oriented Mg:ZnO nanorods on Al2O3 substrate towards high-performance H-2 sensing
DOI:10.1016/j.ijhydene.2014.02.123 JN:INTERNATIONAL JOURNAL OF HYDROGEN ENERGY PY:2014
TC:1 AU: Vijayalakshmi, K.;Karthick, K.;
10:646:3 Zn1-xMgxO(0 <= x <= 0.05) nanowalls grown on catalyst-free sapphire substrates by high-pressure PLD and their photoluminescence properties
DOI:10.1007/s00339-012-7327-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Zhang, Peng;Chen, Ling;Zi, Min;Qiu, Zhiwen;Gong, Haibo;Cao, Bingqiang;
10:646:4 Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode
DOI:10.1016/j.tsf.2013.09.083 JN:THIN SOLID FILMS PY:2013
TC:6 AU: Li, Chaoqun;Zhang, Zhenzhong;Chen, Hongyu;Xie, Xiuhua;Shen, Dezhen;
10:646:5 Effects of post-annealing temperature on structural, optical, and electrical properties of MgxZn1-xO films by RF magnetron sputtering
DOI:10.1016/j.jcrysgro.2010.11.154 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:8 AU: Li, Jia;Huang, Jin-Hua;Song, Wei-Jie;Zhang, Yu-Long;Tan, Rui-Qin;Yang, Ye;
10:646:6 Formation of ionic bonds between a fatty-acid Langmuir-Blodgett monolayer and a zinc oxide substrate
DOI:10.1016/j.jcis.2010.08.077 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2010
TC:1 AU: Ikegami, Keiichi;Sugimoto, Takashi;Yoshiyama, Takashi;Maejima, Keigou;Shibata, Hajime;Tampo, Hitoshi;Niki, Shigeru;
10:646:7 Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates
DOI:10.1016/j.mseb.2011.03.001 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:7 AU: Jiang, Dayong;Qin, Jieming;Zhang, Xiyan;Bai, Zhaohui;Shen, Dezhen;
10:646:8 Structural transition from MgZnO nanowires to ultrathin nanowalls by surface separation: growth evolution and gas sensing properties
DOI:10.1088/0957-4484/21/42/425503 JN:NANOTECHNOLOGY PY:2010
TC:7 AU: Kim, Dong Chan;Lee, Ju Ho;Mohanta, Sanjay Kumar;Cho, Hyung Koun;Lee, Jeong Yong;
10:647:1 Strong correlation between oxygen vacancy and ferromagnetism in Yb-doped ZnO thin films
DOI:10.1063/1.4905240 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Li, Fei;Liu, Xue-Chao;Zhou, Ren-Wei;Chen, Hong-Ming;Zhuo, Shi-Yi;Shi, Er-Wei;
10:647:2 Effects of Al doping on the magnetic properties of ZnCoO and ZnCoO:H
DOI:10.1063/1.4864187 JN:APPLIED PHYSICS LETTERS PY:2014
TC:3 AU: Park, Ji Hun;Lee, Seunghun;Kim, Bum-Su;Kim, Won-Kyung;Cho, Yong Chan;Oh, Min Wook;Cho, Chae Ryong;Jeong, Se-Young;
10:647:3 Study of active surface defects in Ti doped ZnO nanoparticles
DOI:10.1063/1.3432571 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Naeem, M.;Qaseem, S.;Gul, I. H.;Maqsood, A.;
10:647:4 Electron energy-loss spectroscopy study of Yb doped ZnO
DOI:10.1063/1.3493260 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Jiang, Nan;Ye, Song;Qiu, Jianrong;
10:647:5 Transport in ZnCoO thin films with stable bound magnetic polarons
DOI:10.1063/1.4886216 JN:APL MATERIALS PY:2014
TC:3 AU: Kaspar, Tim;Fiedler, Jan;Skorupa, Ilona;Buerger, Danilo;Schmidt, Oliver G.;Schmidt, Heidemarie;
10:647:6 Effect of size reduction on the electronic and ferromagnetic properties of the In2O3 nanoparticles
DOI:10.1007/s11051-012-0808-6 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:6 AU: Naeem, M.;Qaseem, S.;Ahmad, I.;Maqbool, M.;
10:647:7 Microstructure of Yb and Li co-doped ZnO by electron microscopy
DOI:10.1016/j.matchemphys.2013.06.027 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Jiang, Nan;Ye, Song;Yang, Bo;
10:648:1 The alloying effects on the structural and optical properties of nanocrystalline copper zinc oxide thin films fabricated by spin coating and annealing method
DOI:10.1016/j.jallcom.2010.04.193 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:11 AU: Erdogan, Ibrahim Y.;
10:648:2 Nanocrystalline copper doped zinc oxide produced from copper doped zinc hydroxide nitrate as a layered precursor
DOI:10.1016/j.apt.2011.03.007 JN:ADVANCED POWDER TECHNOLOGY PY:2012
TC:5 AU: Ghotbi, Mohammad Yeganeh;Bagheri, Narjes;Sadrnezhaad, S. K.;
10:648:3 Synthesis and characterization of nano-sized epsilon-Zn(OH)(2) and its decomposed product, nano-zinc oxide
DOI:10.1016/j.jallcom.2009.10.214 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:10 AU: Ghotbi, Mohammad Yeganeh;
10:648:4 Optical dielectric behaviors of copper zinc alloy thin films
DOI:10.1063/1.3700347 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Yang, Guang;Sun, Jingbo;Zhou, Ji;
10:648:5 Nickel-cobalt alloy nanosheets obtained from reductive hydrothermal-treatment of nickel-cobalt hydroxide carbonate
DOI:10.1016/j.materresbull.2011.12.033 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:0 AU: Ghotbi, Mohammad Yeganeh;Jolagah, Ali;Afrasiabi, Hasan-ali;
10:649:1 Effect of annealing on structural and optical properties of zinc oxide films
DOI:10.1016/j.matchemphys.2010.01.053 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:17 AU: Elilarassi, R.;Chandrasekaran, G.;
10:649:2 Radio frequency plasma enhanced chemical vapor based ZnO thin film deposition on glass substrate: A novel approach towards antibacterial agent
DOI:10.1016/j.apsusc.2011.08.056 JN:APPLIED SURFACE SCIENCE PY:2011
TC:13 AU: Panigrahi, Jagannath;Behera, Debadhyan;Mohanty, Ipsita;Subudhi, Umakanta;Nayak, Bijan B.;Acharya, Bhabani S.;
10:649:3 The influence of annealing temperature on the slip plane activity and optical properties of nanostructured ZnO films
DOI:10.1016/j.apsusc.2011.09.115 JN:APPLIED SURFACE SCIENCE PY:2011
TC:3 AU: Soleimanian, V.;Aghdaee, S. R.;
10:649:4 Influence of oxygen partial pressure on electrical and optical properties of Zn0.93Mn0.07O thin films
DOI:10.1016/j.jallcom.2010.11.191 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:7 AU: Li, Xue-Yong;Li, Hong-Jian;Yuan, Ming;Wang, Zhi-Jun;Zhou, Zi-You;Xu, Ren-Bo;
10:649:5 A Photochemically Induced Molecular Pathway to Smooth and Transparent Gallium-Doped Zinc Oxide Ceramic
DOI:10.1111/j.1551-2916.2010.04310.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:2 AU: Hoffmann, Rudolf C.;Schneider, Joerg J.;
10:649:6 Microstructure evaluation of nanocrystalline MgO powders using the advanced X-ray line profile analysis
DOI:10.1016/j.jcrysgro.2014.10.049 JN:JOURNAL OF CRYSTAL GROWTH PY:2015
TC:0 AU: Soleimanian, V.;Abedi, M.;Aghdaee, S. R.;
10:649:7 Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors
DOI:10.1007/s11664-009-0995-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:6 AU: Zhao, Dalong;Mourey, Devin A.;Jackson, Thomas N.;
10:649:8 Correlation between full width at half maximum (FWHM) of XRD peak with residual stress on ground surfaces
DOI:10.1080/14786435.2012.704429 JN:PHILOSOPHICAL MAGAZINE PY:2012
TC:2 AU: Vashista, M.;Paul, S.;
10:650:1 Fabrication of SnO2 one-dimensional nanosturctures with graded diameters by chemical vapor deposition method
DOI:10.1016/j.jcrysgro.2009.10.052 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Yu, Fang;Tang, Dongsheng;Hai, Kuo;Luo, Zhihua;Chen, Yaqi;He, Xiongwu;Peng, Yuehua;Yuan, Huajun;Zhao, Ding;Yang, Yi;
10:650:2 The FTIR studies of SnO2:Sb(ATO) films deposited by spray pyrolysis
DOI:10.1016/j.matlet.2011.01.052 JN:MATERIALS LETTERS PY:2011
TC:8 AU: Zhang, B.;Tian, Y.;Zhang, J. X.;Cai, W.;
10:650:3 Growth mechanism and thermoelectric properties of beta-FeSi2 matrix with Si nanowires
DOI:10.1016/j.mseb.2011.07.026 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:0 AU: Qu, Xiurong;Jia, Dechang;Hu, Jianmin;Lu, Shuchen;
10:650:4 Rapid synthesis of SnO2 nanowires employing solar thermal energy
DOI:10.1016/j.ceramint.2014.02.085 JN:CERAMICS INTERNATIONAL PY:2014
TC:4 AU: Lee, Geun-Hyoung;
10:650:5 Template-free synthesis of CuO-CeO2 nanowires by hydrothermal technology
DOI:10.1016/j.jcrysgro.2009.10.027 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:7 AU: Cui, M. Y.;Yao, X. Q.;Dong, W. J.;Tsukamoto, K.;Li, C. R.;
10:650:6 Thermoelectric cooling of microelectronic circuits and waste heat electrical power generation in a desktop personal computer
DOI:10.1016/j.mseb.2010.09.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:20 AU: Gould, C. A.;Shammas, N. Y. A.;Grainger, S.;Taylor, I.;
10:650:7 Site-controlled synthesis and mechanism of three-dimensional Mo2S3 flowers
DOI:10.1016/j.apsusc.2012.09.070 JN:APPLIED SURFACE SCIENCE PY:2012
TC:0 AU: Zhong, Yu;Zhang, Yong;Zhang, Gaixia;Li, Ruying;Sun, Xueliang;
10:650:8 Effect of Heat Treatment on the Thermoelectric Properties of Bismuth-Antimony-Telluride Prepared by Mechanical Deformation and Mechanical Alloying
DOI:10.1007/s11664-014-3037-1 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:3 AU: Lee, Deuk-Hee;Lee, Jae-Uk;Jung, Sung-Jin;Baek, Seung-Hyub;Kim, Ju-Heon;Kim, Dong-Ik;Hyun, Dow-Bin;Kim, Jin-Sang;
10:651:1 Investigation of structure, magnetic, and transport properties of Mn-doped SiC films
DOI:10.1116/1.4809586 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:2 AU: Sun, Xianke;Guo, Ruisong;An, Yukai;Liu, Jiwen;
10:651:2 Characterization and photoluminescence of Co-doped SiC films
DOI:10.1116/1.4822057 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:1 AU: Sun, Xianke;Jin, Xin;Wang, Shiqi;Liu, Huarui;Sun, Peng;An, Yukai;Guo, Ruisong;Liu, Jiwen;
10:651:3 Low temperature deposition of hydrogenated nanocrystalline SiC films by helicon wave plasma enhanced chemical vapor deposition
DOI:10.1116/1.3478675 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:3 AU: Yu, Wei;Lu, Wanbing;Teng, Xiaoyun;Ding, Wenge;Han, Li;Fu, Guangsheng;
10:651:4 Variation of the nanostructural feature of nc-SiC:H thin films with post-deposition thermal annealing
DOI:10.1016/j.tsf.2014.10.002 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Sen, Chan-Dany;Son, Jong-Ick;Kim, Hyo-Han;Yun, Han-Sol;Cho, Nam-Hee;
10:651:5 Investigation of microstructures and optical properties in Mn-doped SiC films
DOI:10.1016/j.apsusc.2012.03.179 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: An, Yukai;Duan, Lingshen;Li, Xiang;Wu, Zhonghua;Liu, Jiwen;
10:651:6 Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide
DOI:10.1116/1.3480341 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:2 AU: Liu, Fang;Li, Carolina H.;Pisano, Albert P.;Carraro, Carlo;Maboudian, Roya;
10:651:7 Direct growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxy
DOI:10.1116/1.3528538 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2011
TC:2 AU: Chen, Wei-Chun;Kuo, Shou-Yi;Hsiao, Chien-Nan;Tsai, Din Ping;
10:651:8 Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates
DOI:10.1116/1.3646471 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2011
TC:4 AU: Ikoma, Yoshifumi;Yahaya, Hafizal;Kuriyama, Keiji;Sakita, Hirofumi;Nishino, Yuta;Motooka, Teruaki;
10:651:9 In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
DOI:10.1016/j.tsf.2010.03.116 JN:THIN SOLID FILMS PY:2010
TC:1 AU: Chen, Q.;Feng, Y. P.;Chai, J. W.;Zhang, Z.;Pan, J. S.;Wang, S. J.;
10:652:1 Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering
DOI:10.1016/j.tsf.2009.08.017 JN:THIN SOLID FILMS PY:2010
TC:10 AU: Kim, S. I.;Jung, T. D.;Song, P. K.;
10:652:2 Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering
DOI:10.1016/j.tsf.2009.08.016 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Kang, Y. M.;Kwon, S. H.;Choi, J. H.;Cho, Y. J.;Song, P. K.;
10:652:3 Characteristics of Ti-doped ITO films grown by DC magnetron sputtering
DOI:10.1016/j.ceramint.2011.05.110 JN:CERAMICS INTERNATIONAL PY:2012
TC:2 AU: Chung, Sung Mook;Shin, Jae Heon;Cheong, Woo-Seok;Hwang, Chi-Sun;Cho, Kyoung Ik;Kim, Young Jin;
10:652:4 Compositional analysis and optical properties of Ag-doped ITO films
DOI:10.1016/j.mseb.2011.07.027 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2011
TC:2 AU: Cao, Chunbin;Zhou, Aiyu;Mu, Shuhui;Zhang, Guoshun;Song, Xueping;Sun, Zhaoqi;
10:652:5 Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature
DOI:10.1016/j.mssp.2013.10.008 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:0 AU: Li, Shi-na;Ma, Rui-xin;Ma, Chun-hong;Xiao, Yu-qin;Li, Dong-ran;He, Liang-wei;Zhu, Hong-min;
10:652:6 Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering
DOI:10.1016/j.tsf.2013.10.106 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Lee, Hyun-Jun;Song, Pung-Keun;
10:652:7 Effect of cerium doping on the electrical properties of ultrathin indium tin oxide films for application in touch sensors
DOI:10.1016/j.tsf.2013.11.056 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Kang, Saewon;Cho, Sanghyun;Song, Pungkeun;
10:652:8 Adhesion enhancement of indium tin oxide (ITO) coated quartz optical fibers
DOI:10.1016/j.apsusc.2014.04.170 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Wang, Yihua;Liu, Jing;Wu, Xu;Yang, Bin;
10:652:9 Low temperature chemical vapor deposition of nanocrystalline V2O5 thin films
DOI:10.1016/j.tsf.2011.02.002 JN:THIN SOLID FILMS PY:2011
TC:6 AU: Nandakumar, Navaneetha Krishnan;Seebauer, Edmund G.;
10:653:1 Fabricating silver nanoplate/hybrid silica gel glasses and investigating their nonlinear optical absorption behavior
DOI:10.1016/j.optmat.2014.01.006 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Zheng, Chan;Chen, Wenzhe;Ye, Xiaoyun;Cai, Shuguang;Xiao, Xueqing;
10:653:2 Shape dependence of nonlinear optical behaviors of gold nanoparticles
DOI:10.1016/j.matlet.2011.05.066 JN:MATERIALS LETTERS PY:2011
TC:12 AU: Dong, Jiangzhou;Zhang, Xiaoliang;Cao, Yaan;Yang, Wensheng;Tian, Jianguo;
10:653:3 Nonlinear optical behavior of silver nanopentagons
DOI:10.1016/j.matlet.2013.10.101 JN:MATERIALS LETTERS PY:2014
TC:4 AU: Zheng, Chan;Li, Wei;Chen, Wenzhe;Ye, Xiaoyun;
10:653:4 Novel 3D arrays of gold nanostructures on suspended platinum-coated carbon nanotubes as surface-enhanced Raman scattering substrates
DOI:10.1016/j.matlet.2012.04.124 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Lee, Moon-Keun;Seo, Jeongeun;Cho, Seok Jin;Jo, Youngdeok;Kim, Seonae;Kang, Youngjong;Lee, Haiwon;
10:653:5 Localized surface plasmon resonance optical characteristics for hydrogen peroxide using polyvinylpyrrolidone coated silver nanoparticles
DOI:10.1016/j.matlet.2010.06.054 JN:MATERIALS LETTERS PY:2010
TC:8 AU: Endo, Tatsuro;Shibata, Akinobu;Yanagida, Yasuko;Higo, Yakichi;Hatsuzawa, Takeshi;
10:653:6 High non-resonant third-order optical nonlinearity of Ag-glass nanocomposite fabricated by two-step ion exchange
DOI:10.1016/j.optmat.2013.09.016 JN:OPTICAL MATERIALS PY:2013
TC:4 AU: Karvonen, L.;Ronn, J.;Kujala, S.;Chen, Y.;Saynatjoki, A.;Tervonen, A.;Svirko, Y.;Honkanen, S.;
10:654:1 Study of post annealing influence on structural, chemical and electrical properties of ZTO thin films
DOI:10.1016/j.jallcom.2010.10.212 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:16 AU: Jain, Vipin Kumar;Kumar, Praveen;Kumar, Mahesh;Jain, Praveen;Bhandari, Deepika;Vijay, Y. K.;
10:654:2 Dry Etch Properties of ZTO Thin Films Using Inductively Coupled Plasma
DOI:10.1080/00150193.2013.842827 JN:FERROELECTRICS PY:2013
TC:0 AU: Kim, Han-Soo;Woo, Jong-Chang;Joo, Young-Hee;Kim, Chang-Il;
10:654:3 Effect of Cr content on mechanical and electrical properties of Ni-Cr thin films
DOI:10.1016/j.jallcom.2009.12.180 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:8 AU: Danisman, M.;Cansever, N.;
10:654:4 Annealing effect on the electrical properties and microstructure of embedded Ni-Cr thin film resistor
DOI:10.1016/j.jallcom.2012.05.102 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:6 AU: Lai, Lifei;Zeng, Wenjin;Fu, Xianzhu;Sun, Rong;Du, Ruxu;
10:654:5 Characterization of zinc-tin-oxide films deposited by thermal co-evaporation
DOI:10.1016/j.tsf.2012.05.087 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Acharya, R.;Zhang, Y. Q.;Cao, X. A.;
10:654:6 Effects of Cr buffer layer thickness on the microstructure and the properties of Ni thin films deposited on polyimide substrate
DOI:10.1016/j.apsusc.2011.09.136 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Xu, Jun;Shao, Tianmin;
10:654:7 The use of high density plasma system to improve the etch properties of the zinc tin oxide thin film for transparent thin film transistors active layers
DOI:10.1016/j.apsusc.2013.12.079 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Woo, Jong-Chang;Chun, Yoon-Soo;Kim, Chang-Il;
10:654:8 Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN
DOI:10.1007/s11664-010-1133-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:1 AU: Guo, H.;Andagana, H. B.;Cao, X. A.;
10:654:9 Dry etching characteristics of TiN thin films in CF4/BCl3/N-2 plasma
DOI:10.1016/j.tsf.2011.10.013 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Joo, Young-Hee;Woo, Jong-Chang;Kim, Chang-Il;
10:655:1:1 Novel functional materials with active adsorption and antimicrobial properties
DOI:10.1016/j.matlet.2012.08.010 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Zhen, Zhichao;Zhang, Yihe;Ji, Junhui;Yin, Yuxia;Tong, Wangshu;Chu, Paul K.;
10:655:1:2 Macrocycle-pore network interactions: Aluminum tetrasulfophthalocyanine in organically modified silica
DOI:10.1016/j.jnoncrysol.2011.05.008 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2011
TC:6 AU: Gonzalez-Santiago, B.;Garcia-Sanchez, M. A.;
10:655:1:3 Carbon foams used as packing media in a biological aerated filter system
DOI:10.1016/j.matlet.2011.07.002 JN:MATERIALS LETTERS PY:2011
TC:3 AU: Bao, Ying;Zhan, Liang;Wang, Chunxiao;Wang, Yanli;Qiao, Wenming;Ling, Licheng;
10:655:1:4 Effects of surface properties of red mud on interactions with Escherichia coli
DOI:10.1557/jmr.2013.53 JN:JOURNAL OF MATERIALS RESEARCH PY:2013
TC:2 AU: Tong, Wangshu;Zhang, Yihe;Zhen, Zhichao;Yu, Li;An, Qi;Zhang, Zhilei;Lv, Fengzhu;Chu, Paul K.;
10:655:1:5 Thermal and mass spectroscopic characterization of a sulphur-containing bacterial melanin from Bacillus subtilis
DOI:10.1016/j.jnoncrysol.2010.05.054 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2010
TC:14 AU: Gomez-Marin, Ana M.;Sanchez, Carlos I.;
10:655:1:6 Cobalt porphyrin covalently bonded to organo modified silica xerogels
DOI:10.1016/j.jnoncrysol.2012.07.018 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:6 AU: Quiroz-Segoviano, R. I. Y.;Rojas-Gonzalez, F.;Garcia-Sanchez, M. A.;
10:655:1:7 Synthesis of carbon foam covered with carbon nanofibers as catalyst support for gas phase catalytic reactions
DOI:10.1016/j.matlet.2011.03.054 JN:MATERIALS LETTERS PY:2011
TC:3 AU: Zhang, Cuicui;Wang, Chunxiao;Zhan, Liang;Wang, Can;Wang, Yanli;Ling, Licheng;
10:655:2:1 By-product assisted hydrothermal synthesis of InOOH microflower composed of nanosheets
DOI:10.1016/j.matlet.2013.01.119 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Muruganandham, M.;Lee, Gang-Juan;Wu, Jerry J.;Levchuk, Irina;Sillanpaa, Mika;
10:655:2:2 One-pot synthesis of intercalating ZnO nanoparticles for enhanced dye-sensitized solar cells
DOI:10.1016/j.matlet.2012.09.026 JN:MATERIALS LETTERS PY:2013
TC:8 AU: Bu, Ian Y. Y.;Cole, Matthew T.;
10:655:2:3 Size, crystal structure and morphology changes of IATO nanoparticles effect on its optical property
DOI:10.1007/s00339-014-8364-9 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:0 AU: Hu, Te;Su, Yu-Chang;Liu, Si-Dong;Tang, Hong-Bo;Mu, Shi-Jia;Hu, Ze-Xing;
10:656:1 Thermosetting polyimide resin matrix composites with interpenetrating polymer networks for precision foil resistor chips based on special mechanical performance requirements
DOI:10.1016/j.apsusc.2014.01.188 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Wang, X. Y.;Ma, J. X.;Li, C. G.;Wang, H. X.;
10:656:2 Micro-structural evolution of phenol-formaldehyde resin modified by boron carbide at elevated temperatures
DOI:10.1016/j.matchemphys.2009.10.044 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:11 AU: Wang, Jigang;Jiang, Nan;Jiang, Haiyun;
10:656:3 Synthesis and characterization of molybdenum/phenolic resin composites binding with aluminum nitride particles for diamond cutters
DOI:10.1016/j.apsusc.2013.07.097 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Lin, Chun-Te;Lee, Hsun-Tsing;Chen, Jem-Kun;
10:656:4 Synthesis, characterization and thermal analysis of polyimide-cobalt ferrite nanocomposites
DOI:10.1016/j.msea.2010.06.062 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:5 AU: Mazuera, David;Perales, Oscar;Suarez, Marcelo;Singh, Surinder;
10:656:5 The preparation and characterization of boron-containing phenolic fibers
DOI:10.1016/j.matchemphys.2009.12.042 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:6 AU: Zhang, Wen-Fa;Liu, Chun-Ling;Ying, Yong-Gang;Dong, Wen-Sheng;
10:656:6 Interfacial bonding characteristic of nanoclay/polymer composites
DOI:10.1016/j.apsusc.2011.09.016 JN:APPLIED SURFACE SCIENCE PY:2011
TC:9 AU: Chan, Mo-lin;Lau, Kin-tak;Wong, T. T.;Cardona, Francisco;
10:656:7 Prescribed morphology and interface correlation of MWNTs-EP/PSF hybrid nanofibers reinforced and toughened epoxy matrix
DOI:10.1016/j.matchemphys.2012.03.098 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:5 AU: Li, Gang;Jia, Xiaolong;Huang, Zhibin;Zhu, Bo;Li, Peng;Yang, Xiaoping;Dai, Wuguo;
10:656:8 Effect of the molecular structure of phenolic novolac precursor resins on the properties of phenolic fibers
DOI:10.1016/j.matchemphys.2013.09.027 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:0 AU: Ying, Yong-Gang;Pan, Yan-Ping;Ren, Rui;Dang, Jiang-Min;Liu, Chun-Ling;
10:657:1 Heating effects in nanofocusing metal wedges
DOI:10.1063/1.3615843 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Tan, Shiaw Juen;Gramotnev, Dmitri K.;
10:657:2 Reflection of high-intensity nanosecond Nd:YAG laser pulses by metals
DOI:10.1007/s00339-012-7209-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:1 AU: Benavides, O.;Golikov, V.;Lebedeva, O.;
10:657:3 Nanochemical effects in femtosecond laser ablation of metals
DOI:10.1063/1.4793521 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Vorobyev, A. Y.;Guo, Chunlei;
10:657:4 Reflection of femtosecond laser light in multipulse ablation of metals
DOI:10.1063/1.3620898 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:12 AU: Vorobyev, A. Y.;Guo, Chunlei;
10:657:5 Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films
DOI:10.1016/j.apsusc.2011.04.140 JN:APPLIED SURFACE SCIENCE PY:2011
TC:4 AU: Simi, S.;Navas, I.;Vinodkumar, R.;Chalana, S. R.;Gangrade, Mohan;Ganesan, V.;Pillai, V. P. Mahadevan;
10:657:6 Formation of microtower structures on nanosecond laser ablation of liquid metals
DOI:10.1007/s00339-009-5395-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2010
TC:6 AU: Bulgakova, Nadezhda M.;Panchenko, Alexei N.;Tel'minov, Alexei E.;Shulepov, Mikhail A.;
10:657:7 Analysis of efficiency and optimization of plasmon energy coupling into nanofocusing metal wedges
DOI:10.1063/1.3399463 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Tan, Shiaw Juen;Gramotnev, Dmitri K.;
10:658:1 Analysis of junction properties of gold-zinc oxide nanorods-based Schottky diode by means of frequency dependent electrical characterization on textile
DOI:10.1007/s10853-014-8053-2 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:5 AU: Khan, Azam;Hussain, Mushtaque;Abbasi, Mazhar Ali;Ibupoto, Zafar Hussain;Nur, Omer;Willander, Magnus;
10:658:2 Silver Schottky contacts to a-plane bulk ZnO
DOI:10.1063/1.3493261 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:13 AU: Kim, Hogyoung;Kim, Haeri;Kim, Dong-Wook;
10:658:3 Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods
DOI:10.1063/1.4752402 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:14 AU: Hussain, I.;Soomro, M. Y.;Bano, N.;Nur, O.;Willander, M.;
10:658:4 Fabrication of UV photo-detector based on coral reef like p-NiO/n-ZnO nanocomposite structures
DOI:10.1016/j.matlet.2013.06.083 JN:MATERIALS LETTERS PY:2013
TC:14 AU: Abbasi, Mazhar Ali;Ibupoto, Zafar Hussain;Khan, Azam;Nur, Omer;Willander, Magnus;
10:658:5 Effect of PEG-400 on the morphology and electrical properties of ZnO nanoparticles application for gas sensor
DOI:10.1016/j.mssp.2013.01.005 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2013
TC:6 AU: Akermi, Mehdi;Sakly, Nawfel;Ben Chaabane, Rafik;Ben Ouada, Hafedh;
10:658:6 Electrical characteristics of Pd Schottky contacts on ZnO films
DOI:10.1016/j.mssp.2013.09.010 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Tsiarapas, Christos;Girginoudi, Dimitra;Georgoulas, Nikolaos;
10:658:7 Humidity-sensing properties of ZnO QDs coated QCM: Optimization, modeling and kinetic investigations
DOI:10.1016/j.mssp.2014.06.027 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:2 AU: Sakly, Nawfel;Said, Ayoub Haj;Ben Ouada, Hafedh;
10:658:8 Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma
DOI:10.1016/j.tsf.2010.03.068 JN:THIN SOLID FILMS PY:2010
TC:2 AU: Stauss, Sven;Imanishi, Yasuo;Miyazoe, Hiroyuki;Terashima, Kazuo;
10:659:1 Significant enhancement in electromigration resistance and texture of aluminum films using an ultrathin titanium underlayer
DOI:10.1016/j.actamat.2013.04.032 JN:ACTA MATERIALIA PY:2013
TC:0 AU: Liu, Hongyan;Zeng, Fei;Tang, Guangsheng;Wang, Guangyue;Song, Cheng;Pan, Feng;
10:659:2 Surface acoustic wave resonators based on (002) AlN/Pt/diamond/silicon layered structure
DOI:10.1016/j.tsf.2013.09.050 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Zhou, Changjian;Yang, Yi;Jin, Hao;Feng, Bin;Dong, Shurong;Luo, Jikui;Ren, Tian-Ling;Chan, Mansun;Yang, Cary Y.;
10:659:3 Enhancement of characteristics of ZnO thin film surface acoustic wave device on glass substrate by introducing an alumina film interlayer
DOI:10.1016/j.apsusc.2012.02.028 JN:APPLIED SURFACE SCIENCE PY:2012
TC:6 AU: Shih, Wen-Ching;Wang, Tzyy-Long;Pen, Yan-Kai;
10:659:4 Surface acoustic wave characteristics based on c-axis (006) LiNbO3/diamond/silicon layered structure
DOI:10.1063/1.3609780 JN:APPLIED PHYSICS LETTERS PY:2011
TC:2 AU: Zhou, Changjian;Yang, Yi;Zhan, Jing;Ren, Tianling;Wang, Xinchang;Tian, Sifang;
10:659:5 Acoustoelectric effects in reflection of leaky acoustic waves from LiTaO3 crystal surface coated with metal film
DOI:10.1063/1.3552713 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Rimeika, R.;Sereika, A.;Ciplys, D.;
10:659:6 Growth of highly c-axis oriented (B, Al)N film on diamond for high frequency surface acoustic wave devices
DOI:10.1016/j.tsf.2011.08.090 JN:THIN SOLID FILMS PY:2012
TC:3 AU: Song, Jen-Hao;Huang, Jow-Lay;Omori, Tatsuya;Sung, James C.;Wu, Sean;Lu, Horng-Hwa;Lii, Ding-Fwu;
10:659:7 Leaky-surface-wave generated acoustic beam displacement upon reflection in lithium tantalate crystals
DOI:10.1063/1.4788686 JN:APPLIED PHYSICS LETTERS PY:2013
TC:1 AU: Rimeika, R.;Belovickis, J.;Ciplys, D.;
10:659:8 Surface acoustic wave properties of aluminum oxide films on lithium niobate
DOI:10.1016/j.tsf.2010.07.029 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Shih, Wen-Ching;Wang, Tzyy-Long;Hsu, Li-Lun;
10:660:1 Role of intragrain oxygen diffusion in polycrystalline tin oxide conductivity
DOI:10.1063/1.3561375 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:11 AU: Aldao, C. M.;Mirabella, D. A.;Ponce, M. A.;Giberti, A.;Malagu, C.;
10:660:2 Resonant photoactivation of cadmium sulfide and its effect on the surface chemical activity
DOI:10.1063/1.4881179 JN:APPLIED PHYSICS LETTERS PY:2014
TC:1 AU: Giberti, Alessio;Fabbri, Barbara;Gaiardo, Andrea;Guidi, Vincenzo;Malagu, Cesare;
10:660:3 Electrical and spectroscopic analysis in nanostructured SnO2: "Long-term" resistance drift is due to in-diffusion
DOI:10.1063/1.3658870 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Malagu, Cesare;Giberti, Alessio;Morandi, Sara;Aldao, Celso M.;
10:660:4 Current-voltage characteristics of nanostructured SnO2 films
DOI:10.1016/j.tsf.2013.04.091 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Giberti, Alessio;Malagu, Cesare;
10:660:5 Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
DOI:10.1063/1.4746417 JN:AIP ADVANCES PY:2012
TC:2 AU: Schipani, F.;Aldao, C. M.;Ponce, M. A.;
10:660:6 Study of the oxygen vacancies changes in SnO2 polycrystalline thick films using impedance and photoemission spectroscopies
DOI:10.1063/1.4902150 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Schipani, F.;Ponce, M. A.;Joanni, E.;Williams, F. J.;Aldao, C. M.;
10:660:7 Non-parabolic intergranular barriers in tin oxide and gas sensing
DOI:10.1063/1.4739490 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Aldao, C. M.;Malagu, C.;
10:661:1 All-ceramic solar collectors
DOI:10.1016/j.ceramint.2013.01.011 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Yang, Yuguo;Cao, Shuliang;Xu, Jianhua;Cai, Bin;
10:661:2 Multiwavelength Luminescence in Lanthanide-Doped Hydrocalumite and Mayenite
DOI:10.1021/cm200408x JN:CHEMISTRY OF MATERIALS PY:2011
TC:13 AU: Dominguez, Marta;Elena Perez-Bernal, Maria;Jesus Ruano-Casero, Ricardo;Barriga, Cristobalina;Rives, Vicente;Ferreira, Rute A. S.;Carlos, Luis D.;Rocha, Joao;
10:661:3 Thermal conductivity studies on ceramic floor tiles
DOI:10.1016/j.ceramint.2010.09.023 JN:CERAMICS INTERNATIONAL PY:2011
TC:4 AU: Garcia, E.;de Pablos, A.;Bengoechea, M. A.;Guaita, L.;Osendi, M. I.;Miranzo, P.;
10:661:4 Dry pressed ceramic tiles based on fly ash-clay body: Influence of fly ash granulometry and pentasodium triphosphate addition
DOI:10.1016/j.ceramint.2009.07.009 JN:CERAMICS INTERNATIONAL PY:2010
TC:8 AU: Sokolar, Radomir;Smetanova, Lenka;
10:661:5 The effect of fluidized fly ash on the properties of dry pressed ceramic tiles based on fly ash-clay body
DOI:10.1016/j.ceramint.2011.05.005 JN:CERAMICS INTERNATIONAL PY:2011
TC:10 AU: Sokolar, Radomir;Vodova, Lucie;
10:661:6 Preparation and formation mechanism of nano-iron oxide black pigment from blast furnace flue dust
DOI:10.1016/j.ceramint.2012.06.086 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Shen, Lazhen;Qiao, Yongsheng;Guo, Yong;Tan, Junru;
10:661:7 Development of a black ceramic pigment from non stoichiometric hydrotalcites
DOI:10.1016/j.jeurceramsoc.2011.11.033 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:4 AU: Rives, V.;Perez-Bernal, M. E.;Ruano-Casero, R. J.;Nebot-Diaz, I.;
10:661:8 Mechanical properties of ceramic bodies based on calcite waste
DOI:10.1016/j.ceramint.2012.05.046 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Sokolar, Radomir;Vodova, Lucie;Grygarova, Simona;Stubna, Igor;Sin, Peter;
10:662:1 Preparation and performance of high refractive index silicone resin-type materials for the packaging of light-emitting diodes
DOI:10.1002/app.37897 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:5 AU: Yang, Xiongfa;Shao, Qian;Yang, Linlin;Zhu, Xiaobiao;Hua, Xilin;Zheng, Qunliang;Song, Guangxin;Lai, Guoqiao;
10:662:2 Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs
DOI:10.1007/s11051-010-9895-4 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:11 AU: He, Ying;Wang, Jun-An;Pei, Chang-Long;Song, Ji-Zhong;Zhu, Di;Chen, Jie;
10:662:3 Novel ultraviolet-opaque, visible-transparent and light-emitting ZnO-QD/silicone composites with tunable luminescence colors
DOI:10.1016/j.polymer.2010.03.056 JN:POLYMER PY:2010
TC:21 AU: Yang, Yang;Li, Wan-Nan;Luo, Yong-Song;Xiao, Hong-Mei;Fu, Shao-Yun;Mai, Yiu-Wing;
10:662:4 Preparation and Properties of Transparent Zinc Oxide/Silicone Nanocomposites for the Packaging of High-Power Light-Emitting Diodes
DOI:10.1002/app.33762 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:11 AU: Sun, Yuping;Gu, Aijuan;Liang, Guozheng;Yuan, Li;
10:662:5 Organic-inorganic poly(hydroxyether of bisphenol A) copolymers with double-decker silsesquioxane in the main chains
DOI:10.1039/c1jm13596a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:14 AU: Wang, Lei;Zhang, Chongyin;Zheng, Sixun;
10:662:6 Effects of 3D structure of silsesquioxane moieties on the thermal and optical properties of transparent epoxy/silsesquioxane hybrid materials
DOI:10.1007/s10853-013-7543-y JN:JOURNAL OF MATERIALS SCIENCE PY:2013
TC:1 AU: Ochi, Mitsukazu;Uno, Yasuhiro;Harada, Miyuki;
10:662:7 Synthesis, Characterization, and Properties of Silicone-Epoxy Resins
DOI:10.1002/app.33108 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:13 AU: Yang, Xin;Huang, Wei;Yu, Yunzhao;
10:663:1 Effect of Al dopants on the structural, optical and gas sensing properties of spray-deposited ZnO thin films
DOI:10.1016/j.matchemphys.2013.07.015 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: Prajapati, C. S.;Kushwaha, Ajay;Sahay, P. P.;
10:663:2 Influence of strain/stress on the nonlinear-optical properties of sprayed deposited ZnO:Al thin films
DOI:10.1016/j.apsusc.2011.04.072 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Bahedi, K.;Addou, M.;El Jouad, M.;Sofiani, Z.;El Oauzzani, H.;Sahraoui, B.;
10:663:3 Microstructure, optical and electrical properties of Al-doped ZnO films grown by MOCVD
DOI:10.1016/j.apsusc.2012.05.056 JN:APPLIED SURFACE SCIENCE PY:2012
TC:7 AU: Su, Jianfeng;Tang, Chunjuan;Niu, Qiang;Zang, Chunhe;Zhang, Yongsheng;Fu, Zhuxi;
10:663:4 Influence of aluminum concentration and substrate temperature on the physical characteristics of chemically sprayed ZnO: Al thin solid films deposited from zinc pentanedionate and aluminum pentanedionate
DOI:10.1016/j.mssp.2010.03.003 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2010
TC:9 AU: Castaneda, L.;Silva-Gonzalez, R.;Gracia-Jimenez, J. M.;Hernandez-Torres, M. E.;Avendano-Alejo, M.;Marquez-Beltran, Cesar;Olvera, M. de la L.;Vega-Perez, J.;Maldonado, A.;
10:663:5 Synthesis and characterization of undoped, Al and/or Ho doped ZnO thin Films
DOI:10.1016/j.ceramint.2012.12.067 JN:CERAMICS INTERNATIONAL PY:2013
TC:6 AU: Mereu, R. A.;Mesaros, A.;Vasilescu, M.;Popa, M.;Gabor, M. S.;Ciontea, L.;Petrisor, T.;
10:663:6 Synthesis and characterization of thin film electroluminescent devices all-prepared by ultrasonic spray pyrolysis
DOI:10.1016/j.tsf.2013.10.003 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Ramirez, E. B.;Bizarro, M.;Alonso, J. C.;
10:664:1 Grain resistivity in zinc oxide and tin dioxide varistor ceramics
DOI:10.1016/j.jallcom.2014.07.178 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Ivon, A. I.;Glot, A. B.;Lavrov, R. I.;Lu, Zhen-Ya;
10:664:2 High-current measurement of the grain resistivity in zinc oxide varistor ceramics
DOI:10.1016/j.ceramint.2013.01.072 JN:CERAMICS INTERNATIONAL PY:2013
TC:2 AU: Ivon, A. I.;Lavrov, R. I.;Glot, A. B.;
10:664:3 Two-step sintering of ZnO varistors
DOI:10.1016/j.ssi.2010.06.026 JN:SOLID STATE IONICS PY:2011
TC:6 AU: Shahraki, Mohammad Maleki;Shojaee, Seyyed Ali;Sani, Mohammad Ali Faghihi;Nemati, Ali;Safaee, Iman;
10:664:4 Electrical properties of new tin dioxide varistor ceramics at high currents
DOI:10.1016/j.jeurceramsoc.2012.05.029 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:7 AU: Lu, Zhen-Ya;Glot, A. B.;Ivon, A. I.;Zhou, Zi-Yang;
10:664:5 Nanosecond reversible solid state switches capable of handling MJ of energy
DOI:10.1016/j.jeurceramsoc.2012.01.029 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:7 AU: Metz, Renaud;Pansiot, Julien;Hassanzadeh, Mehrdad;
10:664:6 Impact of sintering temperature on the structural, electrical, and optical properties of doped ZnO nanoparticle-based discs
DOI:10.1016/j.apsusc.2012.07.115 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Sendi, Rabab Khalid;Mahmud, Shahrom;
10:665:1 Textured zinc oxide prepared by liquid phase deposition (LPD) method and its application in improvement of extraction efficiency for 650nm resonant-cavity light-emitting diode (RCLED)
DOI:10.1016/j.jallcom.2011.03.039 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:9 AU: Lei, Po-Hsun;Ding, Ming-Jun;Lee, Yuan-Chih;Chung, Meng-Jung;
10:665:2 N-type ZnO and Al-doped ZnO transparent conductive films prepared by an aqueous solution deposition technique
DOI:10.1016/j.tsf.2013.02.134 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Tseng, Yung-Hsin;Wang, Jau-Sheng;
10:665:3 Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates
DOI:10.1007/s11664-009-1022-x JN:JOURNAL OF ELECTRONIC MATERIALS PY:2010
TC:10 AU: Ben-Yaacov, Tammy;Ive, Tommy;Van de Walle, Chris G.;Mishra, Umesh K.;Speck, James S.;Denbaars, Steven P.;
10:665:4 Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition
DOI:10.1016/j.tsf.2009.09.195 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Asahara, Hirokazu;Takamizu, Daiju;Inokuchi, Atsutoshi;Hirayama, Masaki;Teramoto, Akinobu;Saito, Shin;Takahashi, Migaku;Ohmi, Tadahiro;
10:665:5 The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration
DOI:10.1016/j.apsusc.2014.01.096 JN:APPLIED SURFACE SCIENCE PY:2014
TC:5 AU: Jung, Hanearl;Kim, Doyoung;Kim, Hyungjun;
10:665:6 High resolution photoluminescence spectroscopy of donors in undoped and In-doped ZnO grown by metalorganic vapor phase epitaxy
DOI:10.1063/1.3652854 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Watkins, S. P.;Deng, Z. W.;Li, D. C.;Huang, H.;
10:666:1 Organic dye impregnated poly(vinyl alcohol) nanocomposite as an efficient optical limiter: structure, morphology and photophysical properties
DOI:10.1039/c3tc30427b JN:JOURNAL OF MATERIALS CHEMISTRY C PY:2013
TC:4 AU: Sreeja, S.;Sreedhanya, S.;Smijesh, N.;Philip, Reji;Muneera, C. I.;
10:666:2 Effects of iron oxide nanoparticles on polyvinyl alcohol: interfacial layer and bulk nanocomposites thin film
DOI:10.1007/s11051-009-9802-z JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:30 AU: Guo, Zhanhu;Zhang, Di;Wei, Suying;Wang, Zhe;Karki, Amar B.;Li, Yuehao;Bernazzani, Paul;Young, David P.;Gomes, J. A.;Cocke, David L.;Ho, Thomas C.;
10:666:3 Intense low threshold nonlinear absorption and nonlinear refraction in a new organic-polymer nanocomposite
DOI:10.1016/j.matchemphys.2011.05.045 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:12 AU: Frobel, P. G. Louie;Suresh, S. R.;Mayadevi, S.;Sreeja, S.;Mukherjee, Chandrachur;Muneera, C. I.;
10:666:4 Synthesis, structure, and thermo-physical properties of Fe2O3 center dot Al2O3 and polyethylene nanocomposites
DOI:10.1002/app.35661 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:0 AU: Vakhshouri, Amir Reza;Azizov, Akif;Aliyeva, Reyhan;Bagirova, Shefeq;
10:666:5 Role of CoBr2 on the Structural, Optical and Magnetic Properties of Polyvinyl Alcohol Films
DOI:10.1002/app.29859 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:4 AU: Elashmawi, I. S.;Abdelrazek, E. M.;
10:666:6 Preparation and Study of Thermal Properties of Phase Change Materials Based on Paraffin-Alumina-Filled Polyethylene
DOI:10.1002/app.33268 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:2 AU: Vakhshouri, Amir Reza;Akif, Azizov;Reyhan, Aliyeva;Gala, Martinova;Akif, Quliev;
10:667:1 Anharmonic resonant Raman modes in Mg0.2Zn0.8O
DOI:10.1103/PhysRevB.87.125205 JN:PHYSICAL REVIEW B PY:2013
TC:2 AU: Huso, Jesse;Morrison, John L.;Bergman, Leah;McCluskey, Matthew D.;
10:667:2 Phonon dynamics and anharmonicity in phase segregated structural domains of MgZnO film
DOI:10.1063/1.4863094 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Huso, Jesse;Che, Hui;Thapa, Dinesh;Morrison, John L.;Norton, M. Grant;Bergman, Leah;
10:667:3 Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg
DOI:10.1063/1.4749266 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Cusco, Ramon;Domenech-Amador, Nuria;Artus, Luis;Wang, Ke;Yamaguchi, Tomohiro;Nanishi, Yasushi;
10:667:4 Probing embedded structural inhomogeneities in MgZnO alloys via selective resonant Raman scattering
DOI:10.1063/1.4805005 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Thapa, Dinesh;Huso, Jesse;Che, Hui;Huso, Michelle;Morrison, John L.;Gutierrez, Diana;Norton, M. Grant;Bergman, Leah;
10:667:5 Equations of state for ZnO and MgZnO by high pressure x-ray diffraction
DOI:10.1063/1.3644969 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Hanna, G. J.;Teklemichael, S. T.;McCluskey, M. D.;Bergman, L.;Huso, J.;
10:668:1 Optical and field emission characteristics of anodic aluminium oxide/ZnO hybrid nanostructure
DOI:10.1016/j.matchemphys.2010.02.074 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:20 AU: Khan, Gobinda Gopal;Mukherjee, Nillohit;Mondal, A.;Bandyopadhyay, N. R.;Basumallick, A.;
10:668:2 Growth and properties of vertically well-aligned GaN nanowires by thermal chemical vapor deposition process
DOI:10.1016/j.matlet.2010.11.041 JN:MATERIALS LETTERS PY:2011
TC:1 AU: Kang, S. M.;Kang, B. K.;Yoon, D. H.;
10:668:3 Field emission arrays fabricated utilizing conjugated ZnO quantum dot/carbon nanotube hybrid nanocomposite
DOI:10.1016/j.apsusc.2010.10.092 JN:APPLIED SURFACE SCIENCE PY:2011
TC:7 AU: Wu, Chaoxing;Li, Fushan;Zhang, Yongai;Guo, Tailiang;Qu, Bo;Chen, Zhijian;
10:668:4 Preparation of gold nanoparticles in the presence of citric acid-based dendrimers containing periphery hydroxyl groups
DOI:10.1016/j.matchemphys.2011.03.080 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:5 AU: Namazi, Hassan;Fard, Ahmad Mohammad Pour;
10:668:5 Enhancement in field emission characteristics of multifunctional ZnO/C hybrid nanostructures
DOI:10.1016/j.matchemphys.2012.05.002 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2012
TC:0 AU: Chatterjee, Subhranshu;Mallick, A. Basu;
10:668:6 Hybrid Organic/Inorganic Dendritic Triblock Copolymers: Synthesis, Nanostructure Characterization, and Micellar Behavior
DOI:10.1002/app.31805 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:10 AU: Namazi, Hassan;Jafariradl, Saeed;
10:668:7 A novel reusable platinum nanocatalyst
DOI:10.1016/j.matchemphys.2010.02.059 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:4 AU: Zhou, Weiqiang;Wang, Jing;Wang, Chuanyi;Du, Yukou;Xu, Jingkun;Yang, Ping;
10:669:1 Centrifugal jet spinning for highly efficient and large-scale fabrication of barium titanate nanofibers
DOI:10.1016/j.matlet.2013.11.103 JN:MATERIALS LETTERS PY:2014
TC:1 AU: Ron, Liyun;Kotha, Shiva P.;
10:669:2 Electrical Properties of Highly Conducting SnO2:Sb Nanocrystals Synthesized using a Nonaqueous Sol-Gel Method
DOI:10.1111/j.1551-2916.2010.03979.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2010
TC:8 AU: Conti, Tiago G.;Chiquito, Adenilson J.;da Silva, Rafael O.;Longo, Elson;Leite, Edson R.;
10:669:3 Effect of carbon nanoparticles addition on the mechanical properties of an aluminum composite prepared by mechanical milling and leaching process
DOI:10.1016/j.jallcom.2012.01.111 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2012
TC:1 AU: Estrada-Guel, I.;Carreno-Gallardo, C.;Martinez-Sanchez, R.;
10:669:4 The preparation and morphology characteristics of exfoliated graphite derived from HClO4-graphite intercalation compounds
DOI:10.1016/j.matlet.2009.11.025 JN:MATERIALS LETTERS PY:2010
TC:6 AU: Wei, Xing Hai;Liu, Lang;Zhang, Jin Xi;Shi, Jing Li;Guo, Quan Gui;
10:669:5 Preparation and characterization of sulfur-free exfoliated graphite with large exfoliated volume
DOI:10.1016/j.matlet.2011.11.078 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Yu, Xiu-Juan;Wu, Juan;Zhao, Qi;Cheng, Xiu-Wen;
10:669:6 Preparation of exfoliated graphite intercalated with nitrogen dioxide by direct gas-phase processing
DOI:10.1016/j.matlet.2014.08.009 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Lv, Xiaomeng;Wang, Xuanjun;Huang, Zhiyong;Liu, Xiangxuan;Lv, Chao;
10:670:1 Room temperature trace level detection of NO2 gas using SnO2 modified carbon nanotubes based sensor
DOI:10.1039/c2jm35172b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:23 AU: Sharma, Anjali;Tomar, Monika;Gupta, Vinay;
10:670:2 Acetone and ethanol sensing characteristics of magnesium zinc ferrite nano-particulate chemi-resistive sensor
DOI:10.1007/s10853-014-8302-4 JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:0 AU: Karmakar, M.;Das, P.;Pal, M.;Mondal, B.;Majumder, S. B.;Mukherjee, K.;
10:670:3 Hydrogen sensing characteristics of wet chemical synthesized tailored Mg0.5Zn0.5Fe2O4 nanostructures
DOI:10.1088/0957-4484/21/25/255504 JN:NANOTECHNOLOGY PY:2010
TC:9 AU: Mukherjee, K.;Majumder, S. B.;
10:670:4 Conventional wet impregnation versus microwave-assisted synthesis of SnO2/CNT composites
DOI:10.1007/s11051-010-0098-9 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:4 AU: Motshekga, Sarah;Pillai, Sreejarani K.;Ray, Suprakas S.;
10:670:5 Enhanced performance of CNT/SnO2 thick film gas sensors towards hydrogen
DOI:10.1016/j.matchemphys.2014.04.009 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:2 AU: Majumdar, Sanhita;Nag, Pratanu;Devi, Parukuttyamma Sujatha;
10:670:6 Field Emission Characteristics of SnO2/CNTs Composites Prepared by Microwave-Assisted Wet Impregnation
DOI:10.1155/2012/861591 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Pillai, Sreejarani K.;Motshekga, Sarah C.;Ray, Suprakas Sinha;Kennedy, John;
10:671:1 Morphology-dependent photocatalytic activities of hierarchical microstructures of ZnO
DOI:10.1016/j.matlet.2011.04.074 JN:MATERIALS LETTERS PY:2011
TC:17 AU: Kim, Dahye;Huh, Young-Duk;
10:671:2 Evidence of the formation mechanism of ZnO in aqueous solution
DOI:10.1016/j.matlet.2012.05.013 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Jia, Wei;Dang, Suihu;Liu, Hairui;Zhang, Zhuxia;Yu, Chunyan;Liu, Xuguang;Xu, Bingshe;
10:671:3 Influence of Sodium Dodecyl Sulfonate on the Formation of ZnO Nanorods from epsilon-Zn(OH)(2)
DOI:10.1155/2013/621378 JN:JOURNAL OF NANOMATERIALS PY:2013
TC:1 AU: Wang, Jing;Liu, Chengxiang;Xiang, Lan;
10:671:4 Mechanisms of self-assembly in solution grown ZnO nanorods
DOI:10.1016/j.matlet.2013.07.025 JN:MATERIALS LETTERS PY:2013
TC:1 AU: Urgessa, Z. N.;Talla, K.;Dobson, S. R.;Oluwafemi, O. S.;Olivier, E. J.;Neethling, J. H.;Botha, J. R.;
10:671:5 The impact of nano-milling on porous ZnO prepared from layered zinc hydroxide nitrate and zinc hydroxide carbonate
DOI:10.1016/j.materresbull.2014.09.061 JN:MATERIALS RESEARCH BULLETIN PY:2014
TC:1 AU: Japic, Dajana;Bitenc, Marko;Marinsek, Marjan;Orel, Zorica Crnjak;
10:672:1 Effect of thermal annealing on the microstructure and morphology of erbium films
DOI:10.1016/j.tsf.2012.05.084 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Shen, H. H.;Peng, S. M.;Long, X. G.;Zhou, X. S.;Yang, L.;Sun, K.;Zu, X. T.;
10:672:2 Development of bubble microstructure in ErT2 films during aging
DOI:10.1063/1.3359653 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Bond, Gillian M.;Browning, James F.;Snow, Clark S.;
10:672:3 Effects of Hydrogen in Working Gas on Valence States of Oxygen in Sputter-Deposited Indium Tin Oxide Thin Films
DOI:10.1021/am9006676 JN:ACS APPLIED MATERIALS & INTERFACES PY:2010
TC:6 AU: Luo, Suning;Kohiki, Shigemi;Okada, Koichi;Kohno, Atsushi;Tajiri, Takayuki;Arai, Masao;Ishii, Satoshi;Sekiba, Daiichiro;Mitome, Masanori;Shoji, Fumiya;
10:672:4 Activation of erbium films for hydrogen storage
DOI:10.1063/1.3590335 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Brumbach, Michael T.;Ohlhausen, James A.;Zavadil, Kevin R.;Snow, Clark S.;Woicik, Joseph C.;
10:672:5 Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films
DOI:10.1016/j.tsf.2011.01.249 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Okada, Koichi;Kohiki, Shigemi;Luo, Suning;Sekiba, Daiichiro;Ishii, Satoshi;Mitome, Masanori;Kohno, Atsushi;Tajiri, Takayuki;Shoji, Fumiya;
10:672:6 Evolution and change of He bubbles in He-containing Ti films upon thermal treatment studied by small-angle X-ray scattering and transmission electron microscopy
DOI:10.1016/j.tsf.2014.03.005 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Sun, Guangai;Wu, Erdong;Huang, Chaoqiang;Cheng, Chun;Yan, Guanyun;Wang, Xiaolin;Liu, Shi;Tian, Qiang;Chen, Bo;Wu, Zhonghua;Liu, Yi;Wang, Jie;
10:672:7 Effects of deposition temperature and hydrogen flow rate on the properties of the Al-doped ZnO thin films and amorphous silicon thin-film solar cells
DOI:10.1007/s00339-012-7270-2 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2013
TC:5 AU: Huang, Chia-Cheng;Wang, Fang-Hsing;Yang, Chen-Fu;
10:672:8 Annealing effects on microstructure and mechanical properties of sputtered multilayer Cr(1-x)AlxN films
DOI:10.1016/j.tsf.2011.02.063 JN:THIN SOLID FILMS PY:2011
TC:3 AU: Pang, Xiaolu;Yang, Huisheng;Liu, Xuelian;Gao, Kewei;Wang, Yanbin;Volinsky, Alex A.;Levin, Alexandr A.;
10:673:1 Various Metallic Nano-Sized Patterns Fabricated Using an Ag Ink Printing Technique
DOI:10.1007/s13391-012-2053-7 JN:ELECTRONIC MATERIALS LETTERS PY:2012
TC:8 AU: Oh, Sang-Chul;Yang, Ki-Yeon;Byeon, Kyeong-Jae;Shin, Ju-Hyeon;Kim, Yang-Doo;Do, Lee-Mi;Choi, Kyung-Woo;Lee, Neon;
10:673:2 Improvement of Light Out-Coupling Efficiency in Organic Light-Emitting Diodes with Variable Nanopatterns
DOI:10.1007/s13391-013-3059-5 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:7 AU: Kim, Jeong Ho;Cho, Joong-Yeon;Park, Jaehoon;Lee, Bong Kuk;Baek, Kyu-Ha;Lee, Heon;Do, Lee-Mi;
10:673:3 Replication of surface nano-structure of the wing of dragonfly (Pantala Flavescens) using nano-molding and UV nanoimprint lithography
DOI:10.1007/s13391-013-0042-0 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:3 AU: Cho, Joong-Yeon;Kim, Gyutae;Kim, Sungwook;Lee, Heon;
10:673:4 Analysis of residual layer thickness of resin in an imprinting process using a soft mold
DOI:10.1007/s13391-013-3034-1 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Jang, Siyoul;Lee, Taek Kyoung;Lee, Jae Gab;
10:673:5 Study of Mold Elastic Rigidity during UV Imprinting Process
DOI:10.1007/s13391-014-4085-7 JN:ELECTRONIC MATERIALS LETTERS PY:2014
TC:0 AU: Jang, Siyoul;
10:673:6 Correlation between resin viscosity and imprinting pressure mode
DOI:10.1007/s13391-013-6013-7 JN:ELECTRONIC MATERIALS LETTERS PY:2013
TC:1 AU: Jang, Siyoul;Lee, Jae-Gab;Lee, Heon;
10:674:1 Sputtering-induced Co-0 formation in x-ray photoelectron spectroscopy of nanocrystalline Zn1-xCoxO spinodal enrichment models
DOI:10.1063/1.3407517 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: White, Michael A.;Lovejoy, Tracy C.;Ochsenbein, Stefan T.;Olmstead, Marjorie A.;Gamelin, Daniel R.;
10:674:2 One-dimensional electronic states in Ga2Se3 on Si(001):As
DOI:10.1103/PhysRevB.81.245313 JN:PHYSICAL REVIEW B PY:2010
TC:4 AU: Lovejoy, T. C.;Yitamben, E. N.;Ohta, T.;Fain, S. C., Jr.;Ohuchi, F. S.;Olmstead, M. A.;
10:674:3 Magnetism of wurtzite CoO nanoclusters
DOI:10.1103/PhysRevB.81.054441 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Hanafin, Ruairi;Archer, Thomas;Sanvito, Stefano;
10:674:4 Controlling the growth morphology and phase segregation of Mn-doped Ga2Se3 on Si(001)
DOI:10.1103/PhysRevB.83.155312 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Lovejoy, T. C.;Yitamben, E. N.;Heald, S. M.;Ohuchi, F. S.;Olmstead, M. A.;
10:674:5 Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)
DOI:10.1103/PhysRevB.83.045203 JN:PHYSICAL REVIEW B PY:2011
TC:1 AU: Yitamben, E. N.;Lovejoy, T. C.;Pakhomov, A. B.;Heald, S. M.;Negusse, E.;Arena, D.;Ohuchi, F. S.;Olmstead, M. A.;
10:674:6 Collinear and noncollinear spin ground state of wurtzite CoO
DOI:10.1103/PhysRevB.87.184432 JN:PHYSICAL REVIEW B PY:2013
TC:0 AU: Han, Myung Joon;Kim, Heung-Sik;Kim, Dong Geun;Yu, Jaejun;
10:675:1 Effects of bifunctional linker on the optical properties of ZnO nanocolumn-linker-CdSe quantum dots heterostructure
DOI:10.1016/j.jcis.2011.03.002 JN:JOURNAL OF COLLOID AND INTERFACE SCIENCE PY:2011
TC:10 AU: Zeng, Tsung-Wei;Liu, I-Shuo;Huang, Kuo-Tung;Liao, Hsuieh-Chung;Chien, Chih-Tao;Wong, Daniel Kwan-Pang;Chen, Chun-Wei;Wu, Jih-Jen;Chen, Yang-Fang;Su, Wei-Fang;
10:675:2 Effect of surface modification by self-assembled monolayer on the ZnO film ultraviolet sensor
DOI:10.1063/1.4813107 JN:APPLIED PHYSICS LETTERS PY:2013
TC:2 AU: Chen, Tse-Pu;Lee, Kai-Hsuan;Chang, Sheng-Po;Chang, Shoou-Jinn;Chang, Ping-Chuan;
10:675:3 Band alignment of ZnO/CdSe quantum dots heterojunction determined by ultraviolet photoelectron spectroscopy using synchrotron radiation
DOI:10.1016/j.apsusc.2013.03.079 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Li, Ruifeng;Cai, Chunfeng;Hu, Lian;Wu, Huizhen;Zhang, Wenhua;Zhu, Junfa;
10:675:4 Pump-probe third harmonic generation kinetics of gold nanoparticle-attached aluminum-doped zinc oxide substrate
DOI:10.1016/j.matlet.2012.01.108 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Aziz, M. A.;Oyama, M.;Kityk, I. V.;
10:675:5 Band alignment of ZnO/CdSe quantum dots heterojunction determined by ultraviolet photoelectron spectroscopy using synchrotron radiation (vol 276, pg 258, 2013)
DOI:10.1016/j.apsusc.2013.11.122 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Li, Ruifeng;Cai, Chunfeng;Hu, Lian;Wu, Huizhen;Zhang, Wenhua;Zhu, Junfa;
10:675:6 Synthesis of symmetrical hexagonal-shape PbO nanosheets using gold nanoparticles
DOI:10.1016/j.matlet.2011.09.048 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Zeng, Shuwen;Liang, Yennan;Lu, Haifei;Wang, Libo;Dinh, Xuan-Quyen;Yu, Xia;Ho, Ho-Pui;Hu, Xiao;Yong, Ken-Tye;
10:676:1 Local vibrational modes competitions in Mn-doped ZnO epitaxial films with tunable ferromagnetism
DOI:10.1063/1.4885735 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Cao, Qiang;Fu, Maoxiang;Liu, Guolei;Zhang, Huaijin;Yan, Shishen;Chen, Yanxue;Mei, Liangmo;Jiao, Jun;
10:676:2 Donor-acceptor-pair photoluminescence in Ga-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy
DOI:10.1116/1.3368543 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2010
TC:5 AU: Yang, Z.;Liu, J. L.;
10:676:3 Magnetic-field-enhanced forbidden modes in Co-doped ZnO thin films revealed by Raman scattering
DOI:10.1103/PhysRevB.82.014408 JN:PHYSICAL REVIEW B PY:2010
TC:6 AU: Ji, J. T.;Zhang, A. M.;Xia, T. L.;Cao, Q.;Liu, G. L.;Hou, D.;Zhang, Q. M.;
10:676:4 Thermal annealing effect on spin coherence in ZnO single crystals
DOI:10.1063/1.3601869 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Yang, Z.;Li, Y.;Look, D. C.;Zhou, H. M.;Chen, W. V.;Kawakami, R. K.;Yu, P. K. L.;Liu, J. L.;
10:676:5 Temperature-dependent shifts of ultraviolet multipeak emissions for Mn-doped ZnO nanowires
DOI:10.1063/1.3586253 JN:APPLIED PHYSICS LETTERS PY:2011
TC:4 AU: Jiang, Feihong;Zhang, Jun;
10:677:1:1 Uniformity study of wafer-scale InP-to-silicon hybrid integration
DOI:10.1007/s00339-010-5999-z JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:9 AU: Liang, Di;Chapman, David C.;Li, Youli;Oakley, Douglas C.;Napoleone, Tony;Juodawlkis, Paul W.;Brubaker, Chad;Mann, Carl;Bar, Hanan;Raday, Omri;Bowers, John E.;
10:677:1:2 Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation
DOI:10.1063/1.4817675 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Pantzas, Konstantinos;Patriarche, Gilles;Le Bourhis, Eric;Troadec, David;Itawi, Ahmad;Beaudoin, Gregoire;Sagnes, Isabelle;Talneau, Anne;
10:677:1:3 Mechanisms for room temperature direct wafer bonding
DOI:10.1063/1.4794319 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:13 AU: Plach, T.;Hingerl, K.;Tollabimazraehno, S.;Hesser, G.;Dragoi, V.;Wimplinger, M.;
10:677:1:4 Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate
DOI:10.1016/j.jcrysgro.2012.09.063 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Matsumoto, K.;Makino, T.;Kimura, K.;Shimomura, K.;
10:677:1:5 Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology
DOI:10.1063/1.4716030 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:11 AU: Fournel, F.;Continni, L.;Morales, C.;Da Fonseca, J.;Moriceau, H.;Rieutord, F.;Barthelemy, A.;Radu, I.;
10:677:2:1 Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
DOI:10.1063/1.4807890 JN:APPLIED PHYSICS LETTERS PY:2013
TC:7 AU: Talneau, A.;Roblin, C.;Itawi, A.;Mauguin, O.;Largeau, L.;Beaudouin, G.;Sagnes, I.;Patriarche, G.;Pang, C.;Benisty, H.;
10:677:2:2 Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation
DOI:10.1116/1.4863317 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:2 AU: Itawi, A.;Pantzas, K.;Sagnes, I.;Patriarche, G.;Talneau, A.;
10:677:2:3 Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer
DOI:10.1063/1.4896978 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Pantzas, Konstantinos;Patriarche, Gilles;Talneau, Anne;Ben Youssef, Jamal;
10:678:1 Surface plasmon enhanced photoluminescence and Raman scattering of ultra thin ZnO-Au hybrid nanoparticles
DOI:10.1063/1.4776654 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:8 AU: Saravanan, K.;Panigrahi, B. K.;Krishnan, R.;Nair, K. G. M.;
10:678:2 The application of localized surface plasmons resonance in Ag nanoparticles assisted Si chemical etching
DOI:10.1063/1.4855615 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Ding, Ruiqiang;Dai, Han;Li, Meicheng;Huang, Jinjer;Li, Yingfeng;Trevor, Mwenya;Musselman, Kevin P.;
10:678:3 Obtaining of ZnO Nanoparticles Decorated with Bi2O3 and NiO by Modified Sol-Gel Technique
DOI:10.1111/jace.12684 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:0 AU: Trusova, Elena A.;Vokhmintcev, Kirill V.;
10:678:4 Sol-gel synthesis and phase composition of ultrafine ceria-doped zirconia powders for functional ceramics
DOI:10.1016/j.jeurceramsoc.2011.11.006 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:6 AU: Trusova, E. A.;Khrushcheva, A. A.;Vokhmintcev, K. V.;
10:678:5 Dilatometric sintering study of fine-grained ceramics from ultradispersed admixture composed of Ce0.09Zr0.91O2 and MgO-Al2O3
DOI:10.1016/j.jeurceramsoc.2013.01.040 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2013
TC:0 AU: Trusova, Elena A.;Khrushcheva, Anastasia A.;Vokhmintcev, Kirill V.;Titov, Dmitry D.;
10:678:6 Improvement in Nonlinear Properties and Electrical Stability of ZnO Varistors with B2O3 Additives by Nano-Coating Method
DOI:10.1111/j.1551-2916.2011.04900.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:7 AU: Cheng, Lihong;Li, Guorong;Yuan, Kaiyang;Meng, Lei;Zheng, Liaoying;
10:679:1:1 Interaction of Discharges in Heptane with Silicon Covered by a Carpet of Carbon Nanotubes
DOI:10.1002/adem.201300106 JN:ADVANCED ENGINEERING MATERIALS PY:2013
TC:2 AU: Hamdan, Ahmad;Audinot, Jean-Nicolas;Migot-Choux, Sylvie;Noel, Cedric;Kosior, Francis;Henrion, Gerard;Belmonte, Thierry;
10:679:1:2 Plasma-surface interaction in heptane
DOI:10.1063/1.4809766 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Hamdan, A.;Kosior, F.;Noel, C.;Henrion, G.;Audinot, J-N;Gries, T.;Belmonte, T.;
10:679:1:3 Impacts created on various materials by micro-discharges in heptane: Influence of the dissipated charge
DOI:10.1063/1.4780786 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:5 AU: Hamdan, A.;Noel, C.;Kosior, F.;Henrion, G.;Belmonte, T.;
10:679:1:4 Interaction of micro-discharges in heptane with metallic multi-layers
DOI:10.1016/j.apsusc.2013.03.074 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Hamdan, A.;Audinot, J. -N.;Noel, C.;Kosior, F.;Henrion, G.;Belmonte, T.;
10:679:1:5 Experimental study of micro electrical discharge machining discharges
DOI:10.1063/1.4811296 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Braganca, I. M. F.;Rosa, P. A. R.;Dias, F. M.;Martins, P. A. F.;Alves, L. L.;
10:679:1:6 Can surface cracks and unipolar arcs explain breakdown and gradient limits?
DOI:10.1116/1.4766929 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2013
TC:4 AU: Insepov, Zeke;Norem, Jim;
10:679:2:1 Three dimensional imaging using secondary ion mass spectrometry and atomic force microscopy
DOI:10.1016/j.apsusc.2011.09.029 JN:APPLIED SURFACE SCIENCE PY:2011
TC:14 AU: Fleming, Yves;Wirtz, Tom;Gysin, Urs;Glatzel, Thilo;Wegmann, Urs;Meyer, Ernst;Maier, Urs;Rychen, Joerg;
10:679:2:2 Differential ion beam sputtering of segregated phases in aluminum casting alloys
DOI:10.1016/j.apsusc.2012.11.033 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Nguyen, Chuong L.;Wirtz, Tom;Fleming, Yves;Metson, James B.;
10:680:1 Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study
DOI:10.1063/1.3627371 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:9 AU: Dompoint, D.;Boulle, A.;Galben-Sandulache, I.;Chaussende, D.;Hoa, L. T. M.;Ouisse, T.;Eyidi, D.;Demenet, J. L.;Beaufort, M. F.;Rabier, J.;
10:680:2 Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC
DOI:10.1063/1.3455999 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Sun, J. W.;Zoulis, G.;Lorenzzi, J. C.;Jegenyes, N.;Peyre, H.;Juillaguet, S.;Souliere, V.;Milesi, F.;Ferro, G.;Camassel, J.;
10:680:3 Enhanced photoconductivity of 3C-SiC by Al/N codoping
DOI:10.1063/1.4820456 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:0 AU: Dou, Yan-Kun;Li, Jing-Bo;Jin, Hai-Bo;Fang, Xiao-Yong;Cao, Mao-Sheng;
10:680:4 Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC
DOI:10.1103/PhysRevB.83.195201 JN:PHYSICAL REVIEW B PY:2011
TC:0 AU: Sun, J. W.;Ivanov, I. G.;Juillaguet, S.;Camassel, J.;
10:680:5 Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission
DOI:10.1063/1.3487480 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Ivanov, I. G.;Henry, A.;Yan, Fei;Choyke, W. J.;Janzen, E.;
10:680:6 Growing 3C-SiC heteroepitaxial layers on alpha-SiC substrate by vapour-liquid-solid mechanism from the Al-Ge-Si ternary system
DOI:10.1016/j.jcrysgro.2010.10.174 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:2 AU: Lorenzzi, Jean;Ferro, Gabriel;Cauwet, Francois;Souliere, Veronique;Carole, Davy;
10:680:7 Phase transformation in high-speed cylindrical grinding of SiC and its effects on residual stresses
DOI:10.1016/j.matlet.2012.08.119 JN:MATERIALS LETTERS PY:2012
TC:8 AU: Ni, Jiaming;Li, Beizhi;
10:681:1 Excimer laser deposited CuO and Cu2O films with third-order optical nonlinearities by femtosecond z-scan measurement
DOI:10.1007/s00339-010-6092-3 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2011
TC:9 AU: Yang, Guang;Chen, Aiping;Fu, Ming;Long, Hua;Lu, Peixiang;
10:681:2 Optical limiting properties in copper oxide thin films under a high-repetition-rate femtosecond laser
DOI:10.1016/j.matlet.2012.09.111 JN:MATERIALS LETTERS PY:2013
TC:6 AU: Chen, Aiping;Yang, Guang;Long, Hua;Lu, Peixiang;Zhang, Wenrui;Wang, Haiyan;
10:681:3 Nonlinear optical properties of bulk cuprous oxide using single beam Z-scan at 790 nm
DOI:10.1063/1.4901734 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Serna, J.;Rueda, E.;Garcia, H.;
10:681:4 Third order optical susceptibilities of the Cu2O thin film
DOI:10.1016/j.tsf.2011.04.209 JN:THIN SOLID FILMS PY:2011
TC:7 AU: Fu, Ming;Long, Hua;Wang, Kai;Yang, Guang;Lu, Peixiang;
10:681:5 Effect of sintering atmospheres on the densification behavior of CuO ceramics
DOI:10.1016/j.ceramint.2012.10.085 JN:CERAMICS INTERNATIONAL PY:2013
TC:1 AU: Song, Ju-Hyun;Lee, Jung-A;Lee, Joon-Hyung;Heo, Young-Woo;Kim, Jeong-Joo;
10:681:6 Enhancing the Stability of CuO Thin-Film Photoelectrodes by Ti Alloying
DOI:10.1007/s11664-012-2194-3 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:8 AU: Tang, Houwen;Matin, M. A.;Wang, Heli;Sudhakar, Shet;Chen, Le;Al-Jassim, Mowafak M.;Yan, Yanfa;
10:681:7 Optical nonlinearities of Au/TiO2 films excited by high-repetition-rate femtosecond laser
DOI:10.1016/j.tsf.2010.09.053 JN:THIN SOLID FILMS PY:2010
TC:3 AU: Long, Hua;Fu, Ming;Li, Yuhua;Yang, Guang;Lu, Peixiang;
10:682:1 Transparent p-CuI/n-ZnO heterojunction diodes
DOI:10.1063/1.4794532 JN:APPLIED PHYSICS LETTERS PY:2013
TC:4 AU: Schein, Friedrich-Leonhard;von Wenckstern, Holger;Grundmann, Marius;
10:682:2 Origins of magnetism in transition metal doped Cul
DOI:10.1063/1.3471802 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Wang, Jing;Li, Jingbo;Li, Shu-Shen;
10:682:3 First principles and Monte Carlo study of Mn-doped CuCl/CuBr as room-temperature ferromagnetism materials
DOI:10.1063/1.3698357 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Chen, Zhanghui;Li, Jingbo;Li, Shu-Shen;
10:682:4 Origin of antiferromagnetism in CoO: A density functional theory study
DOI:10.1063/1.3402772 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Deng, Hui-Xiong;Li, Jingbo;Li, Shu-Shen;Xia, Jian-Bai;Walsh, Aron;Wei, Su-Huai;
10:682:5 Native p-type transparent conductive CuI via intrinsic defects
DOI:10.1063/1.3633220 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Wang, Jing;Li, Jingbo;Li, Shu-Shen;
10:682:6 Interface Recombination Current in Type II Heterostructure Bipolar Diodes
DOI:10.1021/am504454g JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:4 AU: Grundmann, Marius;Karsthof, Robert;von Wenckstern, Holger;
10:683:1 Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application
DOI:10.1063/1.3579529 JN:APPLIED PHYSICS LETTERS PY:2011
TC:17 AU: Tripathi, A. K.;Smits, E. C. P.;van der Putten, J. B. P. H.;van Neer, M.;Myny, K.;Nag, M.;Steudel, S.;Vicca, P.;O'Neill, K.;van Veenendaal, E.;Genoe, G.;Heremans, P.;Gelinck, G. H.;
10:683:2 Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition
DOI:10.1063/1.3555446 JN:APPLIED PHYSICS LETTERS PY:2011
TC:6 AU: Maeng, W. J.;Park, Joon Seok;Kim, Hyun-Suk;Lee, Kwang-Hee;Park, Kyung Bae;Son, Kyoung Seok;Kim, Tae Sang;Kim, Eok Su;Ham, Yong Nam;Ryu, Myungkwan;Lee, Sang Yoon;
10:683:3 High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
DOI:10.1063/1.4752009 JN:APPLIED PHYSICS LETTERS PY:2012
TC:7 AU: Chasin, Adrian;Steudel, Soeren;Myny, Kris;Nag, Manoj;Ke, Tung-Huei;Sohols, Sarah;Genoe, Jan;Gielen, Georges;Heremans, Paul;
10:683:4 Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application (vol 98, 162102, 2011)
DOI:10.1063/1.3628678 JN:APPLIED PHYSICS LETTERS PY:2011
TC:0 AU: Tripathi, A. K.;Smits, E. C. P.;van der Putten, J. B. P. H.;van Neer, M.;Myny, K.;Nag, M.;Steudel, S.;Vicca, P.;O'Neill, K.;van Veenendaal, E.;Genoe, J.;Heremans, P.;Gelinck, G. H.;
10:684:1 Nanoindentation study of WC-12Co hardmetals obtained from nanocrystalline powders: Evaluation of hardness and modulus on individual phases
DOI:10.1016/j.msea.2010.01.026 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2010
TC:18 AU: Bonache, V.;Rayon, E.;Salvador, M. D.;Busquets, D.;
10:684:2 Nanoindentation, AFM and tribological properties of thin nc-WC/a-C Coatings
DOI:10.1016/j.jeurceramsoc.2012.01.037 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2012
TC:5 AU: Lofaj, Frantisek;Ferdinandy, Milan;Cempura, Gregorz;Dusza, Jan;
10:684:3 Mechanical characterization of WC-10 wt% AISI 304 cemented carbides
DOI:10.1016/j.msea.2014.09.064 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2014
TC:1 AU: Fernandes, C. M.;Vilhena, L. M.;Pinho, C. M. S.;Oliveira, F. J.;Soares, E.;Sacramento, J.;Senos, A. M. R.;
10:684:4 Sintering, microstructure and properties of WC-AISI304 powder composites
DOI:10.1016/j.jallcom.2013.02.013 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2013
TC:1 AU: Marques, B. J.;Fernandes, C. M.;Senos, A. M. R.;
10:684:5 Phase and microstructure evolution during the synthesis of WC nanopowders via thermal processing of the precursor
DOI:10.1016/j.powtec.2011.11.005 JN:POWDER TECHNOLOGY PY:2012
TC:7 AU: Jin, Yongzhong;Li, Xinyue;Liu, Dongliang;Liu, Chunhai;Yang, Ruisong;
10:684:6 The stress-strain behavior of WC-Co hardmetals
DOI:10.1016/j.commatsci.2010.05.055 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2010
TC:3 AU: Golovchan, V. T.;Litoshenko, N. V.;
10:684:7 Sintering characteristics and properties of WC-10AISI304 (stainless steel) hardmetals with added graphite
DOI:10.1016/j.msea.2014.03.053 JN:MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES PY:2014
TC:2 AU: Tran Bao Trung;Zuhailawati, Hussain;Ahmad, Zainal Arifin;Ishihara, Keiichi N.;
10:685:1:1 Surface processing technique based on opto-hydrodynamic phenomena occurring in laser-induced breakdown of a microdroplet
DOI:10.1063/1.3692109 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Ahn, Daehwan;Jang, Deoksuk;Choi, Tae-Youl;Kim, Dongsik;
10:685:1:2 Development of an opto-hydrodynamic process to remove nanoparticles from solid surfaces
DOI:10.1016/j.apsusc.2012.11.063 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Ahn, Daehwan;Ha, Jeonghong;Kim, Dongsik;
10:685:1:3 Enhancement of airborne shock wave by laser-induced breakdown of liquid column in laser shock cleaning
DOI:10.1063/1.3558989 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Jang, Deoksuk;Park, Jin-Goo;Kim, Dongsik;
10:685:1:4 Removal of metals and ceramics by combined effects of micro liquid jet and laser pulse
DOI:10.1063/1.4772614 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Ahn, Daehwan;Seo, Changho;Kim, Dongsik;
10:685:2:1 Visual measurement of the pulse laser ablation process on liquid surface by using digital holography
DOI:10.1063/1.4874742 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Wang, J.;Zhao, J. L.;Di, J. L.;Rauf, A.;Yang, W. Z.;Wang, X. L.;
10:685:2:2 Modeling of femtosecond ablation of aluminum film with single laser pulses
DOI:10.1016/j.apsusc.2010.11.154 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Mazhukin, A. V.;Mazhukin, V. I.;Demin, M. M.;
10:685:2:3 High-speed laser ablation of metal with pico- and subpicosecond pulses
DOI:10.1016/j.apsusc.2014.01.111 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Mazhukin, V. I.;Demin, M. M.;Shapranov, A. V.;
10:686:1 Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition
DOI:10.1016/j.apsusc.2009.10.109 JN:APPLIED SURFACE SCIENCE PY:2010
TC:10 AU: Zheng, Gaolin;Yang, Anli;Wei, Hongyuan;Liu, Xianglin;Song, Huaping;Guo, Yan;Jia, Caihong;Jiao, Chunmei;Yang, Shaoyan;Zhu, Qinsheng;Wang, Zhanguo;
10:686:2 Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si (100) substrates
DOI:10.1016/j.apsusc.2011.03.071 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Shin, J. W.;No, Y. S.;Lee, J. Y.;Kim, J. Y.;Choi, W. K.;Kim, T. W.;
10:686:3 Properties of zinc oxide films grown on sapphire substrates using high-temperature H2O generated by a catalytic reaction on platinum nanoparticles
DOI:10.1116/1.4831969 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2014
TC:0 AU: Yasui, Kanji;Takeuchi, Tomohiko;Nagatomi, Eichi;Satomoto, Souichi;Miura, Hitoshi;Kato, Takahiro;Konya, Takayuki;
10:686:4 Electrical properties of ZnO thin films grown on a-plane sapphire substrates using catalytically generated high-energy H2O
DOI:10.1016/j.tsf.2013.06.035 JN:THIN SOLID FILMS PY:2013
TC:1 AU: Yamaguchi, N.;Takeuchi, T.;Nagatomi, E.;Kato, T.;Umemoto, H.;Yasui, K.;
10:686:5 Characterization of ZnO thin film synthesized on alumina-rich spinel substrate by magnetron sputtering
DOI:10.1016/j.apsusc.2010.03.005 JN:APPLIED SURFACE SCIENCE PY:2010
TC:3 AU: Tang, Huili;Xu, Jun;Li, Hongjun;Dong, Yongjun;Wang, Yinzhen;Wu, Feng;
10:687:1 Surface functionalization of coal powder with different coupling agents for potential applications in organic materials
DOI:10.1016/j.apsusc.2014.06.115 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Cheng, Guojun;Tong, Bin;Tang, Zhongfeng;Yu, Xiuhua;Wang, Honglong;Ding, Guoxin;
10:687:2 Preparation and surface modification of highly dispersed nano-ZnO with stearic acid activated by N,N '-carbonyldiimidazole
DOI:10.1016/j.matlet.2012.05.036 JN:MATERIALS LETTERS PY:2012
TC:5 AU: Chen, Hengzhi;Guo, Zhengkui;Jia, Lingling;
10:687:3 Surface modification of zinc oxide nanorods for potential applications in organic materials
DOI:10.1016/j.apsusc.2011.09.128 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Zhang, Lei;Zhong, Min;Ge, Hongliang;
10:687:4 Surface Modification of MWNTs with BA-MMA-GMA Terpolymer by Single-Step Grafting Technique
DOI:10.1002/app.32529 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:7 AU: Xia, Ru;Li, Minghua;Zhang, Yuchuan;Qian, Jiasheng;Yuan, Xiaoyou;
10:687:5 Effect of Surface-Modified Zinc Oxide as Cure Activator on the Properties of a Rubber Compound Based on NR/SBR
DOI:10.1002/app.33919 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:5 AU: Taghvaei-Ganjali, Saeed;Malekzadeh, Mercedeh;Farahani, Mona;Abbasian, Ali;Khosravi, Morteza;
10:688:1 Effect of composition and annealing on the dielectric properties of ZnO/mullite composite coatings
DOI:10.1016/j.ceramint.2011.08.034 JN:CERAMICS INTERNATIONAL PY:2012
TC:3 AU: Zhou, Liang;Zhou, Wancheng;Su, Jinbu;Luo, Fa;Zhu, Dongmei;
10:688:2 Microstructural and thermal properties of plasma sprayed mullite coatings
DOI:10.1016/j.ceramint.2010.02.007 JN:CERAMICS INTERNATIONAL PY:2010
TC:13 AU: Di Girolamo, Giovanni;Blasi, Caterina;Pilloni, Luciano;Schioppa, Monica;
10:688:3 Fabrication and characterization of ceramic coatings with alumina-silica sol-incorporated alpha-alumina powder coated on woven quartz fiber fabrics
DOI:10.1016/j.ceramint.2013.01.020 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Lu, Hao-Ran;Wang, Chang-An;
10:688:4 Microstructure and mechanical properties of plasma sprayed alumina-based coatings
DOI:10.1016/j.ceramint.2014.04.143 JN:CERAMICS INTERNATIONAL PY:2014
TC:1 AU: Di Girolamo, G.;Brentari, A.;Blasi, C.;Serra, E.;
10:688:5 Pyrolysis of aluminium loaded polymethylsiloxanes: the influence of Al/PMS ratio on mullite formation
DOI:10.1007/s10853-009-3925-6 JN:JOURNAL OF MATERIALS SCIENCE PY:2010
TC:2 AU: Anggono, Juliana;Derby, Brian;
10:689:1 Effect of high Xe-concentration in a plasma display panel with a SrCaO cold cathode
DOI:10.1063/1.3372612 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:6 AU: Uchida, Giichiro;Uchida, Satoshi;Akiyama, Toshiyuki;Kajiyama, Hiroshi;Shinoda, Tsutae;
10:689:2 Analysis of transient electron energy in a micro dielectric barrier discharge for a high performance plasma display panel
DOI:10.1063/1.3291123 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:7 AU: Uchida, Giichiro;Uchida, Satoshi;Kajiyama, Hiroshi;Shinoda, Tsutae;
10:689:3 Impact of Xe partial pressure on the production of excimer vacuum ultraviolet emission for plasma display panels
DOI:10.1063/1.4745898 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Zhu, Di;Zhang, Xiong;Kajiyama, Hiroshi;
10:689:4 Vacuum ultra-violet emission of plasma discharges with high Xe partial pressure using a cathode protective layer with high secondary electron emission
DOI:10.1063/1.4865505 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Zhu, Di;Song, Le;Zhang, Xiong;Kajiyama, Hiroshi;
10:689:5 Discharge Characteristics of Plasma Display Panels with SrCaO Protective Layer Manufactured Using "All-in-Vacuum" Process
DOI:10.2320/matertrans.M2011181 JN:MATERIALS TRANSACTIONS PY:2012
TC:0 AU: Yano, Takanobu;Uchida, Kazuya;Uchida, Giichiro;Shinoda, Tsutae;Kajiyama, Hiroshi;
10:689:6 Electron-impact excitation cross sections into Ne(2p(5)3p) levels for plasma applications
DOI:10.1063/1.3597826 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:4 AU: Jung, R. O.;Piech, Garrett A.;Keeler, M. L.;Boffard, John B.;Anderson, L. W.;Lin, Chun C.;
10:690:1 Origin of the E-2 <-> T-4(2) Fano resonance in Cr3+-doped LiCaAlF6: Pressure-induced excited-state crossover
DOI:10.1103/PhysRevB.81.045114 JN:PHYSICAL REVIEW B PY:2010
TC:10 AU: Sanz-Ortiz, M. N.;Rodriguez, F.;Hernandez, I.;Valiente, R.;Kueck, S.;
10:690:2 Pressure-induced Co2+ photoluminescence quenching in MgAl2O4
DOI:10.1103/PhysRevB.86.125123 JN:PHYSICAL REVIEW B PY:2012
TC:1 AU: Nataf, Lucie;Rodriguez, Fernando;Valiente, Rafael;
10:690:3 Pressure-induced changes in Cr3+-doped elpasolites and LiCaAlF6: Interpretation of macroscopic data
DOI:10.1103/PhysRevB.81.233104 JN:PHYSICAL REVIEW B PY:2010
TC:3 AU: Trueba, A.;Garcia-Lastra, J. M.;Aramburu, J. A.;Garcia-Fernandez, P.;Barriuso, M. T.;Moreno, M.;
10:690:4 First-principles calculations of structural, electronic, optical, elastic properties and microscopic crystal field effects in Rb2CrF6
DOI:10.1016/j.commatsci.2011.03.029 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2011
TC:0 AU: Brik, M. G.;Avram, N. M.;Ma, C. -G.;
10:690:5 Temperature and pressure dependence of the optical properties of Cr3+-doped Gd3Ga5O12 nanoparticles
DOI:10.1088/0957-4484/22/26/265707 JN:NANOTECHNOLOGY PY:2011
TC:6 AU: Martin-Rodriguez, R.;Valiente, R.;Rodriguez, F.;Bettinelli, M.;
10:690:6 Studies of variation of interionic distances and crystal field effects in ZnS:V2+ and MgO:Cr3+
DOI:10.1016/j.optmat.2010.04.023 JN:OPTICAL MATERIALS PY:2010
TC:9 AU: Avram, N. M.;Brik, M. G.;Kityk, I. V.;
10:691:1 Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere
DOI:10.1063/1.4829996 JN:APPLIED PHYSICS LETTERS PY:2013
TC:5 AU: Watanabe, Ken;Lee, Dong-Hee;Sakaguchi, Isao;Nomura, Kenji;Kamiya, Toshio;Haneda, Hajime;Hosono, Hideo;Ohashi, Naoki;
10:691:2 Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions
DOI:10.1063/1.4870425 JN:APPLIED PHYSICS LETTERS PY:2014
TC:0 AU: Watanabe, Ken;Ohsawa, Takeo;Sakaguchi, Isao;Bierwagen, Oliver;White, Mark E.;Tsai, Min-Ying;Takahashi, Ryosuke;Ross, Emily M.;Adachi, Yutaka;Speck, James S.;Haneda, Hajime;Ohashi, Naoki;
10:691:3 Hydrogen in tin dioxide films and bulk ceramics: An attempt to identify the most hidden impurity
DOI:10.1063/1.4863668 JN:APPLIED PHYSICS LETTERS PY:2014
TC:2 AU: Watanabe, Ken;Hashiguchi, Minako;Sakaguchi, Isao;Bryant, Alex;Adachi, Yutaka;Zhen, Yuhua;Ohgaki, Takeshi;Ohsawa, Takeo;Haneda, Hajime;Ohashi, Naoki;
10:691:4 Investigations of growth kinetics of pulsed laser deposition of tin oxide films by isotope tracer technique
DOI:10.1063/1.3506714 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:5 AU: Zhen, Yuhua;Ohsawa, Takeo;Adachi, Yutaka;Sakaguchi, Isao;Li, Baoe;Li, Jianyong;Matsuoka, Ryota;Nishimura, Toshiyuki;Matsumoto, Kenji;Haneda, Hajime;Ohashi, Naoki;
10:691:5 Preparation and characterization of (ZnO)-O-18/(ZnO)-O-16 isotope heterostructure thin films
DOI:10.1016/j.jeurceramsoc.2009.06.023 JN:JOURNAL OF THE EUROPEAN CERAMIC SOCIETY PY:2010
TC:3 AU: Matsumoto, Kenji;Adachi, Yutaka;Sakaguchi, Isao;Ohashi, Naoki;Haneda, Hajime;
10:692:1 Increase of Fe solubility in ZnO induced by the grain boundary adsorption
DOI:10.1007/s10853-014-8146-y JN:JOURNAL OF MATERIALS SCIENCE PY:2014
TC:14 AU: Protasova, S. G.;Straumal, B. B.;Mazilkin, A. A.;Stakhanova, S. V.;Straumal, P. B.;Baretzky, B.;
10:692:2 Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target
DOI:10.1063/1.4890227 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Verhagen, T. G. A.;Boltje, D. B.;van Ruitenbeek, J. M.;Aarts, J.;
10:692:3 The correlation between structure and magnetism of Ni-implanted TiO2 annealed at different temperatures
DOI:10.1016/j.jmmm.2011.07.031 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2012
TC:5 AU: Ding, Binfeng;Cheng, Fengfeng;Pan, Feng;Fa, Tao;Yao, Shude;Potzger, Kay;Zhou, Shengqiang;
10:692:4 Magnetic and optical properties of virgin arc furnace grown MgO crystals
DOI:10.1016/j.jcrysgro.2011.11.067 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:3 AU: Prucnal, S.;Shalimov, A.;Ozerov, M.;Potzger, K.;Skorupa, W.;
10:692:5 Formation of oriented nickel aggregates in rutile single crystals by Ni implantation
DOI:10.1016/j.jmmm.2013.03.032 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2013
TC:1 AU: Cruz, M. M.;da Silva, R. C.;Pinto, J. V.;Borges, R. P.;Franco, N.;Casaca, A.;Alves, E.;Godinho, M.;
10:693:1 Amorphous (In2O3)(x)(Ga2O3)(y)(ZnO)(1-x-y) thin films with high mobility fabricated by pulsed laser deposition
DOI:10.1016/j.apsusc.2013.06.036 JN:APPLIED SURFACE SCIENCE PY:2013
TC:4 AU: Su, Xueqiong;Wang, Li;Sun, Rui;Bao, Chuancheng;Lu, Yi;Wang, R. P.;
10:693:2 Pulsed laser deposited InGaZnO thin film on silica glass
DOI:10.1016/j.jnoncrysol.2011.12.039 JN:JOURNAL OF NON-CRYSTALLINE SOLIDS PY:2012
TC:4 AU: Chen, Jiangbo;Wang, Li;Su, Xueqiong;Wang, Rongping;
10:693:3 Effects of composition on optical and electrical properties of amorphous In-Ga-Zn-O films deposited using radio-frequency sputtering with varying O-2 gas flows
DOI:10.1016/j.tsf.2012.07.106 JN:THIN SOLID FILMS PY:2012
TC:9 AU: Lee, Yih-Shing;Chen, Wei-Jhe;Huang, Jyun-Sheng;Wu, Shich-Chuan;
10:693:4 Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors
DOI:10.1016/j.apsusc.2011.11.104 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Kang, Jiyeon;Moon, Kyeong-Ju;Lee, Tae Il;Lee, Woong;Myoung, Jae-Min;
10:693:5 Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films
DOI:10.1016/j.apsusc.2011.06.129 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Liu, Shiu-Jen;Su, Shih-Hao;Fang, Hau-Wei;Hsieh, Jang-Hsing;Juang, Jenh-Yih;
10:693:6 Relationships between the crystalline phase of an IGZO target and electrical properties of a-IGZO channel film
DOI:10.1016/j.ceramint.2011.05.105 JN:CERAMICS INTERNATIONAL PY:2012
TC:4 AU: Lee, Yih-Shing;Dai, Zuo-Ming;Lin, Cheng-I;Lin, Horng-Chih;
10:694:1 One-Step Thermolysis Synthesis of Divalent Transition Metal Ions Monodoped and Tridoped CdS and ZnS Luminescent Nanomaterials
DOI:10.1155/2014/873036 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Saeed, S. E.;Abdel-Mottaleb, M. M. S.;Abdel-Mottaleb, Andm. S. A.;
10:694:2 Scalable production of microbially mediated zinc sulfide nanoparticles and application to functional thin films
DOI:10.1016/j.actbio.2014.06.005 JN:ACTA BIOMATERIALIA PY:2014
TC:3 AU: Moon, Ji-Won;Ivanov, Ilia N.;Joshi, Pooran C.;Armstrong, Beth L.;Wang, Wei;Jung, Hyunsung;Rondinone, Adam J.;Jellison, Gerald E., Jr.;Meyer, Harry M., III;Jang, Gyoung Gug;Meisner, Roberta A.;Duty, Chad E.;Phelps, Tommy J.;
10:694:3 Effect on photophysical properties of colloidal ZnS quantum dots by doping with cobalt, copper, and cobalt-copper mixtures
DOI:10.1007/s11051-010-9972-8 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2011
TC:4 AU: Iqbal, Muhammad Javed;Iftekhar, Maryam;
10:694:4 The Effect of Polyvinylpyrrolidone on the Optical Properties of the Ni-Doped ZnS Nanocrystalline Thin Films Synthesized by Chemical Method
DOI:10.1155/2012/528047 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:2 AU: Tran Minh Thi;Le Van Tinh;Bui Hong Van;Pham Van Ben;Vu Quoc Trung;
10:695:1 Tunable Wetting Mechanism of Polypyrrole Surfaces and Low-Voltage Droplet Manipulation via Redox
DOI:10.1021/la104403w JN:LANGMUIR PY:2011
TC:12 AU: Tsai, Yao-Tsan;Choi, Chang-Hwan;Gao, Ning;Yang, Eui-Hyeok;
10:695:2 Droplet Manipulation by an External Electric Field for Crystalline Film Growth
DOI:10.1021/la401729k JN:LANGMUIR PY:2013
TC:5 AU: Komino, Takeshi;Kuwabara, Hirokazu;Ikeda, Masaaki;Yahiro, Masayuki;Takimiya, Kazuo;Adachi, Chihaya;
10:695:3 Redox Cycling for Passive Modification of Polypyrrole Surface Properties: Effects on Cell Adhesion and Proliferation
DOI:10.1002/adhm.201200282 JN:ADVANCED HEALTHCARE MATERIALS PY:2013
TC:6 AU: Sivaraman, Kartik M.;Oezkale, Berna;Ergeneman, Olgac;Luehmann, Tessa;Fortunato, Giuseppino;Zeeshan, Muhammad Arif;Nelson, Bradley J.;Pane, Salvador;
10:695:4 Enhancing the Stability of PPy Film on Ti by PEG Incorporation
DOI:10.1080/15421401003720066 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2010
TC:9 AU: Popescu, S.;Pirvu, C.;Mindroiu, M.;Demetrescu, I.;
10:696:1 High temperature ultrasonic transducer up to 1000 degrees C using lithium niobate single crystal
DOI:10.1063/1.3524192 JN:APPLIED PHYSICS LETTERS PY:2010
TC:14 AU: Baba, Atsushi;Searfass, Clifford T.;Tittmann, Bernhard R.;
10:696:2 Modeling of ultrasound transmission through a solid-liquid interface comprising a network of gas pockets
DOI:10.1063/1.3611422 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:2 AU: Paumel, K.;Moysan, J.;Chatain, D.;Corneloup, G.;Baque, F.;
10:696:3 Nano-Imprinting of Highly Ordered Nano-Pillars of Lithium Niobate (LiNbO3)
DOI:10.1080/00150193.2012.676955 JN:FERROELECTRICS PY:2012
TC:2 AU: Lewis, R. W. C.;Allsopp, D. W. E.;Shields, P.;Satka, A.;Yu, S.;Topolov, V. Yu;Bowen, C. R.;
10:696:4 Role of Single-Crystal Pillars in Forming the Effective Properties and Figures of Merit of Novel 1-3 Piezocomposites
DOI:10.1080/10584587.2012.663632 JN:INTEGRATED FERROELECTRICS PY:2012
TC:0 AU: Lewis, R. W. C.;Bowen, C. R.;Topolov, V. Yu.;Allsopp, D. W. E.;
10:696:5 Modelling of ultrasonic propagation in turbulent liquid sodium with temperature gradient
DOI:10.1063/1.4875876 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Massacret, N.;Moysan, J.;Ploix, M. A.;Jeannot, J. P.;Corneloup, G.;
10:696:6 Quantitative evaluation of contact stiffness between pressed solid surfaces using dual-frequency ultrasound
DOI:10.1063/1.3465614 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:2 AU: Guo, Xiasheng;Zhang, Dong;Wu, Junru;
10:697:1 Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy
DOI:10.1016/j.apsusc.2010.04.015 JN:APPLIED SURFACE SCIENCE PY:2010
TC:7 AU: Matsuda, Tokiyoshi;Furuta, Mamoru;Hiramatsu, Takahiro;Furuta, Hiroshi;Li, Chaoyang;Hirao, Takashi;
10:697:2 Behavior of oxygen in zinc oxide films through thermal annealing and its effect on sheet resistance
DOI:10.1016/j.apsusc.2010.11.128 JN:APPLIED SURFACE SCIENCE PY:2011
TC:5 AU: Hiramatsu, Takahiro;Furuta, Mamoru;Matsuda, Tokiyoshi;Li, Chaoyang;Hirao, Takashi;
10:697:3 Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing
DOI:10.1116/1.3259843 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:10 AU: Matsuda, Tokiyoshi;Furuta, Mamoru;Hiramatsu, Takahiro;Furuta, Hiroshi;Hirao, Takashi;
10:697:4 Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application
DOI:10.1080/15421406.2014.936545 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:1 AU: Bae, Jin-Hyuk;Hwang, Jae Eun;Kim, Hong Doo;Zhang, Xue;Park, Jaehoon;
10:697:5 Semiconductor-metal transition of titanium sesquioxide nanopowder
DOI:10.1063/1.4729801 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Yan, Weiwei;Fang, Ming;Liu, Mao;Kang, Shenghong;Wang, Ruining;Zhang, Lide;Liu, Ling;
10:698:1 Low-temperature growth of tetragonal tungsten nanowire arrays on tungsten substrate using Ni solid catalysts
DOI:10.1016/j.jcrysgro.2011.10.015 JN:JOURNAL OF CRYSTAL GROWTH PY:2012
TC:4 AU: Wang, Chao;He, Yuehui;Wang, Shiliang;Zhang, Quan;Liu, Xinli;
10:698:2 Factors affecting the growth of micro/nano-sized tungsten whiskers synthesised by vapour deposition
DOI:10.1080/14786435.2012.725952 JN:PHILOSOPHICAL MAGAZINE PY:2013
TC:2 AU: Liu, Guangyu;Song, Min;Liu, Xinli;He, Yuehui;
10:698:3 Large-scale synthesis of tungsten single-crystal microtubes via vapor-deposition process
DOI:10.1016/j.jcrysgro.2010.10.222 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:6 AU: Wang, Shiliang;He, Yuehui;Liu, Xinli;Zhang, Quan;Zou, Jin;Huang, Han;Song, Min;Huang, Baiyun;Liu, C. T.;Du, Yong;
10:698:4 Two-dimensional metallic tungsten nanowire network fabricated by electron-beam-induced deposition
DOI:10.1088/0957-4484/21/28/285304 JN:NANOTECHNOLOGY PY:2010
TC:5 AU: Chen, C. L.;Arakawa, K.;Mori, H.;
10:699:1 Photoluminescence and the exciton-phonon coupling in hydrothermally grown ZnO
DOI:10.1103/PhysRevB.83.205202 JN:PHYSICAL REVIEW B PY:2011
TC:13 AU: Mendelsberg, R. J.;Allen, M. W.;Durbin, S. M.;Reeves, R. J.;
10:699:2 Optical and defect properties of hydrothermal ZnO with low lithium contamination
DOI:10.1063/1.4739515 JN:APPLIED PHYSICS LETTERS PY:2012
TC:6 AU: Heinhold, R.;Kim, H. -S.;Schmidt, F.;von Wenckstern, H.;Grundmann, M.;Mendelsberg, R. J.;Reeves, R. J.;Durbin, S. M.;Allen, M. W.;
10:699:3 Interfacial assembly of ZnO quantum dots into giant supramolecular architectures
DOI:10.1039/c3sm52610k JN:SOFT MATTER PY:2014
TC:3 AU: Ali, Mohammed;Pal, Sudip Kumar;Rahaman, Hasimur;Ghosh, Sujit Kumar;
10:699:4 Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO
DOI:10.1063/1.3660417 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:1 AU: Laufer, Andreas;Volbers, Niklas;Eisermann, Sebastian;Potzger, Kay;Geburt, Sebastian;Ronning, Carsten;Meyer, Bruno K.;
10:699:5 FTIR Spectroscopy of Hydrogen-Bonded Cu(N-R-Salim)(2) Dye Complexes
DOI:10.1080/15421406.2013.837995 JN:MOLECULAR CRYSTALS AND LIQUID CRYSTALS PY:2014
TC:0 AU: Dodia, K. J.;Oza, A. T.;
10:700:1 Dissipative surface stress effects on free vibrations of nanowires
DOI:10.1063/1.3528212 JN:APPLIED PHYSICS LETTERS PY:2010
TC:9 AU: Hasheminejad, Seyyed M.;Gheshlaghi, Behnam;
10:700:2 Size dependent surface dissipation in thick nanowires
DOI:10.1063/1.4732090 JN:APPLIED PHYSICS LETTERS PY:2012
TC:2 AU: Gheshlaghi, Behnam;Hasheminejad, Seyyed M.;
10:700:3 Size dependent damping in axisymmetric vibrations of circular nanoplates
DOI:10.1016/j.tsf.2013.04.014 JN:THIN SOLID FILMS PY:2013
TC:2 AU: Gheshlaghi, Behnam;Hasheminejad, Seyyed M.;
10:700:4 Free transverse vibrations of cracked nanobeams with surface effects
DOI:10.1016/j.tsf.2010.12.143 JN:THIN SOLID FILMS PY:2011
TC:12 AU: Hasheminejad, Seyyed M.;Gheshlaghi, Behnam;Mirzaei, Yaser;Abbasion, Saeed;
10:700:5 An analytical method for free vibration analysis of Timoshenko beam theory applied to cracked nanobeams using a nonlocal elasticity model
DOI:10.1016/j.tsf.2012.06.063 JN:THIN SOLID FILMS PY:2012
TC:10 AU: Torabi, K.;Dastgerdi, J. Nafar;
10:701:1 Initial stages of ITO/Si interface formation: In situ x-ray photoelectron spectroscopy measurements upon magnetron sputtering and atomistic modelling using density functional theory
DOI:10.1063/1.4866991 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Lovvik, O. M.;Diplas, S.;Romanyuk, A.;Ulyashin, A.;
10:701:2 Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films
DOI:10.1063/1.3587174 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Thogersen, Annett;Rein, Margrethe;Monakhov, Edouard;Mayandi, Jeyanthinath;Diplas, Spyros;
10:701:3 An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate
DOI:10.1063/1.4774404 JN:APPLIED PHYSICS LETTERS PY:2013
TC:3 AU: Rein, M. H.;Hohmann, M. V.;Thogersen, A.;Mayandi, J.;Holt, A. O.;Klein, A.;Monakhov, E. V.;
10:701:4 The effect of post-annealing on Indium Tin Oxide thin films by magnetron sputtering method
DOI:10.1016/j.apsusc.2014.04.042 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Park, J. H.;Buurma, C.;Sivananthan, S.;Kodama, R.;Gao, W.;Gessert, T. A.;
10:702:1 Nitrogen-doped ZnO nanorods prepared by hydrothermal diffusion
DOI:10.1016/j.matlet.2012.06.104 JN:MATERIALS LETTERS PY:2012
TC:6 AU: Wang, Lingling;Lin, Baozhu;Zhou, Lin;Shang, Yan Xia;Panin, Gannidy N.;Fu, Dejun;
10:702:2 Variation of N acceptor energy induced by Al-N codoping in ZnO films
DOI:10.1016/j.jallcom.2010.03.213 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Su Jianfeng;Tang Chunjuan;Niu Qiang;Wang Changqing;Fu Zhuxi;
10:702:3 Enhanced field emission from self-assembled ZnO nanorods on graphene/Ni/Si substrates
DOI:10.1016/j.matlet.2013.08.124 JN:MATERIALS LETTERS PY:2013
TC:3 AU: Wang, Lingling;Hung, Maiphi;Panin, Gennady N.;Kang, Taewon;Fu, D. J.;
10:702:4 Enhanced p-type conductivity of nitrogen doped ZnO by nano/micro structured rods and Zn-rich Co-doping process
DOI:10.1007/s13391-011-0605-x JN:ELECTRONIC MATERIALS LETTERS PY:2011
TC:4 AU: Mu, Wei;Kerr, Lei L.;Look, David C.;
10:703:1 Effect of Mn doping on the microstructures and photoluminescence properties of CBD derived ZnO nanorods
DOI:10.1016/j.apsusc.2009.12.035 JN:APPLIED SURFACE SCIENCE PY:2010
TC:14 AU: Lang, Jihui;Han, Qiang;Li, Changsheng;Yang, Jinghai;Li, Xue;Yang, Lili;Wang, Dandan;Zhai, Hongju;Gao, Ming;Zhang, Yongjun;Liu, Xiaoyan;Wei, Maobin;
10:703:2 Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films
DOI:10.1016/j.apsusc.2009.11.043 JN:APPLIED SURFACE SCIENCE PY:2010
TC:13 AU: Patil, S. B.;Singh, A. K.;
10:703:3 Growth of Cu2S/CdS nano-layered photovoltaic junctions for solar cell applications
DOI:10.1016/j.apsusc.2010.08.066 JN:APPLIED SURFACE SCIENCE PY:2010
TC:12 AU: Sam, M.;Bayati, M. R.;Mojtahedi, M.;Janghorban, K.;
10:703:4 Closed-Space Flux Sublimation Growth and Properties of (Cu-Mn)-Doped ZnO Films in Nanoneedle-Like Morphologies
DOI:10.1080/10584587.2011.574470 JN:INTEGRATED FERROELECTRICS PY:2011
TC:2 AU: Thankalekshmi, Ratheesh R.;Dixit, Samwad;Rastogi, A. C.;Samanta, K.;Katiyar, R. S.;
10:704:1 Unique light-induced degradation in yellow-emitting K2SiF6:Mn2+ phosphor
DOI:10.1063/1.4897363 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:1 AU: Oyama, Takuya;Adachi, Sadao;
10:704:2 A yellow phosphor K2SiF6 activated by Mn2+ ions
DOI:10.1063/1.3481856 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:9 AU: Arai, Takahiro;Arai, Yusuke;Takahashi, Toru;Adachi, Sadao;
10:704:3 Mn-activated Na2SiF6 red and yellowish-green phosphors: A comparative study
DOI:10.1063/1.3639298 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:8 AU: Arai, Takahiro;Adachi, Sadao;
10:704:4 Laser-induced time-resolved luminescence of orange kyanite Al2SiO5
DOI:10.1016/j.optmat.2011.03.052 JN:OPTICAL MATERIALS PY:2011
TC:3 AU: Gaft, M.;Nagli, L.;Panczer, G.;Rossman, G. R.;Reisfeld, R.;
10:705:1 Optical properties of hydrothermal-method-grown ZnO crystal as EUV laser diagnostics material
DOI:10.1016/j.jcrysgro.2012.01.008 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:4 AU: Yamanoi, Kohei;Shimizu, Toshihiko;Furukawa, Yusuke;Cadatal-Raduban, Marilou;Nakazato, Tomoharu;Sakai, Kohei;Tsuboi, Mizuki;Nishi, Ryosuke;Sarukura, Nobuhiko;Tanaka, Momoko;Nishikino, Masaharu;Yamatani, Hiroshi;Nagashima, Keisuke;Kimura, Toyoaki;Fukuda, Tsuguo;Nagasono, Mitsuru;Togashi, Tadashi;Higashiya, Atsushi;Yabashi, Makina;Ishikawa, Tetsuya;Ohashi, Haruhiko;Kimura, Hiroaki;
10:705:2 Photoluminescence properties of a single ZnO microstructure for potential scintillator applications
DOI:10.1016/j.optmat.2014.10.044 JN:OPTICAL MATERIALS PY:2014
TC:2 AU: Empizo, Melvin John F.;Fukuda, Kazuhito;Arita, Ren;Minami, Yuki;Yamanoi, Kohei;Shimizu, Toshihiko;Sarukura, Nobuhiko;Vargas, Ray M.;Salvador, Arnel A.;Sarmago, Roland V.;
10:705:3 High spatial resolution ZnO scintillator for an in situ imaging device in EUV region
DOI:10.1016/j.optmat.2014.01.031 JN:OPTICAL MATERIALS PY:2014
TC:1 AU: Arita, Ren;Nakazato, Tomoharu;Shimizu, Toshihiko;Yamanoi, Kohei;Empizo, Melvin John Fernandez;Hori, Tatsuhiro;Fukuda, Kazuhito;Minami, Yuki;Sarukura, Nobuhiko;Tanaka, Momoko;Nishikino, Masaharu;Fukuda, Tsuguo;
10:705:4 Response-time-improved ZnO scintillator by impurity doping
DOI:10.1016/j.jcrysgro.2010.10.192 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:10 AU: Kano, Masataka;Wakamiya, Akira;Sakai, Kohei;Yamanoi, Kohei;Cadatal-Raduban, Marilou;Nakazato, Tomoharu;Shimizu, Toshihiko;Sarukura, Nobuhiko;Ehrentraut, Dirk;Fukuda, Tsuguo;
10:705:5 Proposal for a Pulse-Compression Scheme in X-Ray Free-Electron Lasers to Generate a Multiterawatt, Attosecond X-Ray Pulse
DOI:10.1103/PhysRevLett.110.084801 JN:PHYSICAL REVIEW LETTERS PY:2013
TC:7 AU: Tanaka, Takashi;
10:705:6 Response-time improved hydrothermal-method-grown ZnO scintillator for XFEL timing-observation
DOI:10.1016/j.optmat.2010.04.039 JN:OPTICAL MATERIALS PY:2010
TC:8 AU: Yamanoi, Kohei;Sakai, Kohei;Nakazato, Tomoharu;Estacio, Elmer;Shimizu, Toshihiko;Sarukura, Nobuhiko;Ehrentraut, Dirk;Fukuda, Tsuguo;Nagasono, Mitsuru;Togashi, Tadashi;Matsubara, Shinichi;Tono, Kensuke;Yabashi, Makina;Kimura, Hiroaki;Ohashi, Haruhiko;Ishikawa, Tetsuya;
10:706:1 Temperature- and Atmosphere-Dependent Defect Chemistry Model of SnO2 Nanocrystalline Film
DOI:10.1111/jace.12890 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2014
TC:2 AU: Zhang, Guozhu;Xie, Changsheng;Zhang, Shunping;Yang, Li;Xiong, Ya;Zeng, Dawen;
10:706:2 Effect of Zinc Doping on Microstructures and Gas-Sensing Properties of SnO2 Nanocrystals
DOI:10.1111/j.1551-2916.2011.04957.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2012
TC:16 AU: Tian, Shouqin;Gao, Yingri;Zeng, Dawen;Xie, Changsheng;
10:706:3 Direct experimental evidence for Sb-Zn-2V(Zn) complex as the important defect in the Sb-doped ZnO nanocrystals
DOI:10.1016/j.matlet.2013.11.070 JN:MATERIALS LETTERS PY:2014
TC:2 AU: Tian, Shouqin;Zeng, Dawen;Xie, Changsheng;Zhao, Xiujian;
10:706:4 Influence of Cr2O3 on the Residual Voltage Ratio of SnO2-Based Varistor
DOI:10.1111/j.1551-2916.2011.04620.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:3 AU: Wei, Qiaoyuan;He, Jinliang;Hu, Jun;Wang, Yunchao;
10:707:1 Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays
DOI:10.1016/j.apsusc.2014.10.016 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Wang, Lanlan;Liu, Hongzhong;Jiang, Weitao;Gao, Wei;Chen, Bangdao;Li, Xin;Ding, Yucheng;An, Ningli;
10:707:2 Drastic change in shape of tetragonal TeO2 nanowires and their application to transparent chemical gas sensors
DOI:10.1016/j.apsusc.2011.08.081 JN:APPLIED SURFACE SCIENCE PY:2011
TC:8 AU: Kim, Sang Sub;Park, Jae Young;Choi, Sun-Woo;Na, Han Gil;Yang, Ju Chan;Kwak, Dong Sub;Nam, Hyun Jung;Hwangbo, Chang Kwon;Kim, Hyoun Woo;
10:707:3 Formation of alpha-TeO2 pearl-like microwires templated on porous microtubes through thermal oxidation of Te microtubes
DOI:10.1016/j.apsusc.2012.11.005 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Filippo, E.;Siciliano, T.;Genga, A.;Micocci, G.;Siciliano, M.;Tepore, M.;
10:707:4 Fabrication of alpha-TeO2 smooth and beaded microwires by thermal evaporation method
DOI:10.1016/j.jcrysgro.2011.09.047 JN:JOURNAL OF CRYSTAL GROWTH PY:2011
TC:3 AU: Filippo, Emanuela;Micocci, Gioacchino;Tepore, Antonio;Siciliano, Tiziana;
10:707:5 A metal/insulator/metal field-emission cannon
DOI:10.1088/0957-4484/22/45/455302 JN:NANOTECHNOLOGY PY:2011
TC:2 AU: Liu, Hongzhong;Chen, Bangdao;Li, Xin;Liu, Weihua;Ding, Yucheng;Lu, Bingheng;
10:708:1 Growth control of ZnO nanorod density by sol-gel method
DOI:10.1016/j.tsf.2010.03.103 JN:THIN SOLID FILMS PY:2010
TC:9 AU: Prabakar, K.;Kim, Heeje;
10:708:2 Growth of hexagonal prism ZnO nanorods on Zn substrates by hydrothermal method and their photoluminescence
DOI:10.1016/j.ceramint.2012.10.122 JN:CERAMICS INTERNATIONAL PY:2013
TC:3 AU: Ekthammathat, Nuengruethai;Thongtem, Titipun;Phuruangrat, Anukorn;Thongtem, Somchai;
10:708:3 Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target
DOI:10.1016/j.jcrysgro.2012.09.016 JN:JOURNAL OF CRYSTAL GROWTH PY:2013
TC:1 AU: Takayanagi, Shinji;Yanagitani, Takahiko;Matsukawa, Mami;
10:708:4 ZnO Nanowire Formation by Two-Step Deposition Method Using Energy-Controlled Hollow-Type Magnetron RF Plasma
DOI:10.1155/2011/850930 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:0 AU: Ono, Hideki;Iizuka, Satoru;
10:708:5 Formation of ZnO nanostructures in energy-controlled hollow-type magnetron RF plasma
DOI:10.1016/j.tsf.2009.11.048 JN:THIN SOLID FILMS PY:2010
TC:7 AU: Kumeta, Keisuke;Ono, Hideki;Iizuka, Satoru;
10:709:1 Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode
DOI:10.1063/1.3598396 JN:APPLIED PHYSICS LETTERS PY:2011
TC:1 AU: Lee, Hee Sung;Lee, Kwang H.;Chang, Youn-Gyoung;Raza, Syed Raza Ali;Im, Seongil;Kim, Dong-Ho;Kim, Hye-Ri;Lee, Gun-Hwan;
10:709:2 Ambient-protecting organic light transducer grown on pentacene-channel of photo-gating complementary inverter
DOI:10.1039/c2jm13768b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2012
TC:3 AU: Lee, Hee Sung;Lee, Kwang H.;Park, Chan Ho;Jeon, Pyo Jin;Choi, Kyujin;Kim, Dong-Ho;Kim, Hye-Ri;Lee, Gun-Hwan;Kim, Jae Hoon;Im, Seongil;
10:709:3 Three-dimensional microfluidic liquid-core/liquid-cladding waveguide
DOI:10.1063/1.3460279 JN:APPLIED PHYSICS LETTERS PY:2010
TC:19 AU: Lee, Kang Soo;Kim, Sang Bok;Lee, Kyung Heon;Sung, Hyung Jin;Kim, Sang Soo;
10:710:1 Nanostructured alpha-MoO3 thin film as a highly selective TMA sensor
DOI:10.1016/j.bios.2013.09.057 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:10 AU: Pandeeswari, R.;Jeyaprakash, B. G.;
10:710:2 Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films
DOI:10.1016/j.jallcom.2014.02.143 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:1 AU: Kumar, Ch. S. S. Pavan;Pandeeswari, R.;Jeyaprakash, B. G.;
10:710:3 Trimethylamine sensing properties of nano-SnO2 prepared using microwave heating method
DOI:10.1016/j.ceramint.2010.05.029 JN:CERAMICS INTERNATIONAL PY:2010
TC:13 AU: Chu, Xiangfeng;Han, Yanlei;Zhou, Sumei;Shui, Hengfu;
10:710:4 Vertically aligned Mn-doped zinc oxide nanorods by hybrid wet chemical route
DOI:10.1016/j.matchemphys.2010.03.073 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:3 AU: Gayen, R. N.;Majumder, S.;Varma, S.;Pal, A. K.;
10:710:5 Trimethylamine gas sensor based on Cr3+ doped ZnO nanorods/nanoparticles prepared via solvothermal method
DOI:10.1016/j.matchemphys.2011.09.069 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2011
TC:6 AU: Chu, Xiangfeng;Zhou, Sumei;Dong, Yongping;Sun, Wenqi;Ge, Xiutao;
10:711:1 Green phosphorescence of zinc sulfide optical ceramics
DOI:10.1364/OME.4.001140 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Li, Yiyu;Zhang, Lihua;Kisslinger, Kim;Wu, Yiquan;
10:711:2 Transparent ZnS Ceramics by Sintering of High Purity Monodisperse Nanopowders
DOI:10.1111/jace.12570 JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2013
TC:1 AU: Chlique, Christophe;Merdrignac-Conanec, Odile;Hakmeh, Noha;Zhang, Xianghua;Adam, Jean-Luc;
10:711:3 A comparative study of ZnS powders sintering by Hot Uniaxial Pressing (HUP) and Spark Plasma Sintering (SPS)
DOI:10.1016/j.optmat.2010.10.008 JN:OPTICAL MATERIALS PY:2011
TC:4 AU: Chlique, C.;Delaizir, G.;Merdrignac-Conanec, O.;Roucau, C.;Dolle, M.;Rozier, P.;Bouquet, V.;Zhang, X. H.;
10:712:1 Thermal conductivity of 4H-SiC single crystals
DOI:10.1063/1.4790134 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:7 AU: Wei, Rusheng;Song, Sheng;Yang, Kun;Cui, Yingxin;Peng, Yan;Chen, Xiufang;Hu, Xiaobo;Xu, Xiangang;
10:712:2 Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers
DOI:10.1116/1.4861379 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B PY:2014
TC:1 AU: Hwang, Wan Sik;Tahy, Kristof;Zhao, Pei;Nyakiti, Luke O.;Wheeler, Virginia D.;Myers-Ward, Rachael L.;Eddy, Charles R., Jr.;Gaskill, D. Kurt;Xing, Huili (Grace);Seabaugh, Alan;Jena, Debdeep;
10:712:3 Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation
DOI:10.1364/OME.4.001166 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Luan, Qingfang;Jia, Yuechen;Wang, Yutian;Akhmadaliev, Shavkat;Zhou, Shengqiang;Vazquez de Aldana, Javier R.;Tan, Yang;Chen, Feng;
10:713:1 Influence of Cd2+/S2- molar ratio and of different capping environments in the optical properties of CdS nanoparticles incorporated within a hybrid diureasil matrix
DOI:10.1016/j.apsusc.2014.06.181 JN:APPLIED SURFACE SCIENCE PY:2014
TC:1 AU: Goncalves, Luis F. F. F.;Silva, Carlos J. R.;Kanodarwala, Fehmida K.;Stride, John A.;Pereira, Mario R.;Gomes, Maria J. M.;
10:713:2 Synthesis of an optically clear, flexible and stable hybrid ureasilicate matrix doped with CdSe nanoparticles produced by reverse micelles
DOI:10.1016/j.matchemphys.2014.04.010 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:3 AU: Goncalves, Luis F. F. F.;Silva, Carlos J. R.;Kanodarwala, Fehmida K.;Stride, John A.;Pereira, Mario R.;Gomes, Maria J. M.;
10:713:3 One-pot synthesis of CdS nanoparticles exhibiting quantum size effect prepared within a sol-gel derived ureasilicate matrix
DOI:10.1016/j.optmat.2013.08.026 JN:OPTICAL MATERIALS PY:2013
TC:8 AU: Goncalves, Luis F. F. F.;Kanodarwala, Fehmida K.;Stride, John A.;Silva, Carlos J. R.;Gomes, Maria J. M.;
10:714:1 Synthesis of self-assembled urchin-like superstructures of BaCO3
DOI:10.1016/j.materresbull.2012.06.036 JN:MATERIALS RESEARCH BULLETIN PY:2012
TC:1 AU: Cho, Young-Sik;Huh, Young-Duk;
10:714:2 Chemical synthesis of nanosized BaCO3 with a pillar-like morphology
DOI:10.1016/j.ceramint.2010.11.046 JN:CERAMICS INTERNATIONAL PY:2011
TC:3 AU: Zeng, Chen;Li, Ping;Xu, HongBin;Xu, ZhiFeng;Li, HuiHui;Zhang, Yi;
10:714:3 Formation of BaCO3 superstructures self-assembled by nano-slices
DOI:10.1016/j.matlet.2011.12.022 JN:MATERIALS LETTERS PY:2012
TC:3 AU: Li, Caifen;Nan, Zhaodong;
10:714:4 Egg albumin-assisted preparation, characterization and influencing factors of Dumbbell-shaped BaCO3 superstructures
DOI:10.1016/j.matchemphys.2009.11.026 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:2 AU: Ni, Yonghong;Li, Xiaolong;Hong, Jianming;Ma, Xiang;
10:714:5 Morphology evolution of barium oxalate hydrate controlled by poly (sodium-4-styrenesulfonate)
DOI:10.1016/j.powtec.2013.08.003 JN:POWDER TECHNOLOGY PY:2013
TC:1 AU: Ding, S. S.;Lei, M.;Xiao, H.;Zhang, Y. C.;Huang, K.;Liang, C.;Wang, Y. J.;Liu, G.;Zhang, R.;Fu, X. L.;Fan, D. Y.;Yang, H. J.;Wang, Y. G.;
10:715:1 Continuous Surface Functionalization of Flame-Mlade TiO2 Nanoparticles
DOI:10.1021/la9037149 JN:LANGMUIR PY:2010
TC:13 AU: Teleki, Alexandra;Bjelobrk, Nada;Pratsinis, Sotiris E.;
10:715:2 Photo-initiated chemical vapor deposition as a scalable particle functionalization technology (a practical review)
DOI:10.1016/j.powtec.2013.02.024 JN:POWDER TECHNOLOGY PY:2013
TC:2 AU: Dion, C. A. Dorval;Tavares, J. R.;
10:715:3 Chemical vapor functionalization: a continuous production process for functionalized ZnO nanoparticles
DOI:10.1007/s11051-011-0689-0 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:0 AU: Ali, Moazzam;Donakowski, Martin D.;Mayer, Christian;Winterer, Markus;
10:715:4 Preparation of amorphous carbon nanofilm by magneto-luminous polymerization
DOI:10.1002/app.36415 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2012
TC:1 AU: Yasuda, Hirotsugu;
10:716:1 Effects of pH values on crystal growth and photoluminescence properties of ZnO hexagonal rods with cones
DOI:10.1016/j.matlet.2014.05.060 JN:MATERIALS LETTERS PY:2014
TC:0 AU: Yang, Bo;Zuo, Xueqin;Yang, Xiao;Zhou, Lei;Li, Guang;
10:716:2 Fabrication and low-temperature photoluminescence spectra of Mn-doped ZnO nanowires
DOI:10.1007/s00339-012-7294-7 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2012
TC:1 AU: Zhang, Jun;Jiang, Feihong;Ding, Shuanghong;
10:716:3 ZnO cages with tunable shell thickness and photoluminescence properties
DOI:10.1016/j.mseb.2010.04.010 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2010
TC:2 AU: Zhou, Jie;Wu, Dapeng;Guo, Huajie;Liu, Ning;Xiao, Ying;Jiang, Kai;
10:717:1 Corrosion inhibition performance of three imidazole derivatives on mild steel in 1 M phosphoric acid
DOI:10.1016/j.matchemphys.2010.08.058 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:17 AU: Ghanbari, A.;Attar, M. M.;Mahdavian, M.;
10:717:2 An investigation on the inhibitory action of benzazole derivatives as a consequence of sulfur atom induction
DOI:10.1016/j.apsusc.2014.08.079 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Moradi, Z.;Attar, M. M.;
10:717:3 Experimental and theoretical investigations on the inhibition of mild steel corrosion in the ground water medium using newly synthesised bipodal and tripodal imidazole derivatives
DOI:10.1016/j.matchemphys.2014.05.033 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2014
TC:1 AU: Gopi, D.;Sherif, El-Sayed M.;Surendiran, M.;Jothi, M.;Kumaradhas, P.;Kavitha, L.;
10:717:4 Some higher N-substituted 1,3-thiazolidine-2,4-diones and 5,5-diphenylhydantoins, their synthesis and corrosion preventive properties in mineral oil medium
DOI:10.1016/j.apsusc.2012.11.144 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Ozturk, Serkan;Yildirim, Ayhan;Cetin, Mehmet;
10:717:5 Inhibition of carbon steel corrosion in CO2-saturated brine using some newly surfactants based on palm oil: Experimental and theoretical investigations
DOI:10.1016/j.matchemphys.2013.07.044 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:12 AU: Abd El-Lateef, Hany M.;Abbasov, V. M.;Aliyeva, L. I.;Qasimov, E. E.;Ismayilov, I. T.;
10:718:1 Effects of oxygen percentage on the growth of copper oxide thin films by reactive radio frequency sputtering
DOI:10.1016/j.matchemphys.2013.03.028 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:5 AU: Ooi, P. K.;Ng, S. S.;Abdullah, M. J.;Abu Hassan, H.;Hassan, Z.;
10:718:2 Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor
DOI:10.1016/j.tsf.2011.11.037 JN:THIN SOLID FILMS PY:2012
TC:8 AU: Liang, JianBo;Kishi, Naoki;Soga, Tetsuo;Jimbo, Takashi;Ahmed, Mohsin;
10:718:3 Influence of thickness of sub-micron Cu2O-doped RuO2 electrode on sensing performance of planar electrochemical pH sensors
DOI:10.1016/j.matlet.2012.01.107 JN:MATERIALS LETTERS PY:2012
TC:7 AU: Zhuiykov, Serge;Kats, Eugene;Kalantar-zadeh, Kourosh;Breedon, Michael;Miura, Norio;
10:719:1 Ultra-wideband surface acoustic wave resonator employing Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystals
DOI:10.1063/1.3675908 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Chen, Jing;Liu, Jiansong;Hashimoto, Ken-ya;Omori, Tatsuya;Ahn, Changjun;Zhao, Xiangyong;Luo, Haosu;
10:719:2 Theoretical analysis of ultrahigh electromechanical coupling surface acoustic wave propagation in Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystals
DOI:10.1063/1.3549804 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:3 AU: Chen, Jing;Wang, Hualei;Hashimoto, Ken-ya;Omori, Tatsuya;Changjun, An;Zhao, Xiangyong;Luo, Haosu;
10:719:3 Comprehensive characterization of surface acoustic wave resonators using relaxor based ferroelectric single crystals
DOI:10.1063/1.4816020 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Chen, Jing;Han, Tao;Ji, Xiaojun;Zhao, Xiangyong;Luo, Haosu;
10:720:1 Reduction of conductivity and ferromagnetism induced by Ag doping in ZnO:Co
DOI:10.1016/j.tsf.2013.07.043 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Bieber, H.;Colis, S.;Schmerber, G.;Pierron-Bohnes, V.;Boukhvalov, D. W.;Kurmaev, E. Z.;Finkelstein, L. D.;Bazylewski, P.;Moewes, A.;Chang, G. S.;Dinia, A.;
10:720:2 Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO
DOI:10.1016/j.jmmm.2011.02.011 JN:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS PY:2011
TC:3 AU: Lee, Y. H.;Lee, J. C.;Min, J. F.;Su, C. W.;
10:720:3 Element-specific electronic structure of Mn dopants and ferromagnetism of (Zn,Mn)O thin films
DOI:10.1016/j.tsf.2009.12.100 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Jin, J.;Chang, G. S.;Boukhvalov, D. W.;Zhang, X. Y.;Finkelstein, L. D.;Xu, W.;Zhou, Y. X.;Kurmaev, E. Z.;Moewes, A.;
10:720:4 X-ray absorption and emission spectroscopic investigation of Mn doped ZnO films
DOI:10.1016/j.apsusc.2011.07.091 JN:APPLIED SURFACE SCIENCE PY:2011
TC:2 AU: Jin, J.;Chang, G. S.;Zhou, Y. X.;Zhang, X. Y.;Boukhvalov, D. W.;Kurmaev, E. Z.;Moewes, A.;
10:721:1 The effect of Ga content on In2xGa2-2xO3 nanowire transistor characteristics
DOI:10.1088/0957-4484/23/30/305203 JN:NANOTECHNOLOGY PY:2012
TC:6 AU: Suh, Misook;Meyyappan, M.;Ju, Sanghyun;
10:721:2 Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties
DOI:10.1016/j.apsusc.2011.09.028 JN:APPLIED SURFACE SCIENCE PY:2011
TC:1 AU: Liu, Lizhu;Chen, Yiqing;Guo, Linliang;Guo, Taibo;Zhu, Yunqing;Su, Yong;Jia, Chong;Wei, Meiqin;Cheng, Yinfen;
10:721:3 In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate
DOI:10.1016/j.jcrysgro.2010.08.024 JN:JOURNAL OF CRYSTAL GROWTH PY:2010
TC:1 AU: Chen, Yiqing;Liu, Lizhu;Zhang, Xinhua;Guo, Taibo;Su, Yong;Jia, Chong;Li, Qiang;Wei, Meiqin;
10:722:1 Evolution of plasticity in nanometric cutting of Fe single crystals
DOI:10.1016/j.apsusc.2014.08.020 JN:APPLIED SURFACE SCIENCE PY:2014
TC:3 AU: Gao, Yu;Urbassek, Herbert M.;
10:722:2 Insights into the thermo-mechanics of orthogonal nanometric machining
DOI:10.1016/j.commatsci.2013.01.036 JN:COMPUTATIONAL MATERIALS SCIENCE PY:2013
TC:7 AU: Romero, P. A.;Anciaux, G.;Molinari, A.;Molinari, J. -F.;
10:722:3 Molecular dynamics simulation on deformation mechanisms in body-centered-cubic molybdenum nanowires
DOI:10.1063/1.3660251 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:6 AU: Wang, Peng;Chou, Wu;Nie, Anmin;Huang, Yang;Yao, Haimin;Wang, Hongtao;
10:723:1 Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors
DOI:10.1063/1.4831665 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:2 AU: Tsormpatzoglou, A.;Hastas, N. A.;Choi, N.;Mahmoudabadi, F.;Hatalis, M. K.;Dimitriadis, C. A.;
10:723:2 Surface potential study of amorphous In-Ga-Zn-O thin film transistors
DOI:10.1063/1.3503871 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Chen, C.;Kanicki, J.;
10:723:3 Modeling of amorphous InGaZnO thin film transistors using an empirical mobility function based on the exponential deep and tail states
DOI:10.1016/j.tsf.2011.06.088 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Shin, Jae-Heon;Cheong, Woo-Seok;Hwang, Chi-Sun;Chung, Sung Mook;
10:724:1 Evaluation of indium tin oxide films grown at room temperature by pulsed electron deposition
DOI:10.1116/1.3378153 JN:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A PY:2010
TC:4 AU: Nampoori, Harshan V.;Rincon, Veronica;Chen, Mengwei;Kotru, Sushma;
10:724:2 Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films
DOI:10.1016/j.mssp.2014.05.026 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:4 AU: Xu, Zhou;Chen, Peng;Wu, Zhenlong;Xu, Feng;Yang, Guofeng;Liu, Bin;Tan, Chongbin;Zhang, Lin;Zhang, Rong;Zheng, Youdou;
10:724:3 Nanoscale Investigation of Grain Growth in RF-Sputtered Indium Tin Oxide Thin Films by Scanning Probe Microscopy
DOI:10.1007/s11664-014-3212-4 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2014
TC:1 AU: Lamsal, B. S.;Dubey, M.;Swaminathan, V.;Huh, Y.;Galipeau, D.;Qiao, Q.;Fan, Q. H.;
10:724:4 Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes
DOI:10.1016/j.mssp.2013.09.004 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2014
TC:1 AU: Cheng, Yan;Zhan, Teng;Ma, Jun;Zhang, Lian;Si, Zhao;Yi, Xiaoyan;Wang, Guohong;Li, Jinmin;
10:725:1 Preparation of high quality spray-deposited fluorine-doped tin oxide thin films using dilute di(n-butyl)tin(iv) diacetate precursor solutions
DOI:10.1016/j.tsf.2012.06.068 JN:THIN SOLID FILMS PY:2012
TC:4 AU: Premalal, E. V. A.;Dematage, N.;Kaneko, S.;Konno, A.;
10:725:2 Nucleation, growth and properties of Co nanostructures electrodeposited on n-Si(1 1 1)
DOI:10.1016/j.apsusc.2011.12.060 JN:APPLIED SURFACE SCIENCE PY:2012
TC:4 AU: Khelladi, Mohamed Redha;Mentar, Loubna;Azizi, Amor;Kadirgan, Figen;Schmerber, Guy;Dinia, Aziz;
10:725:3 Early stages of cobalt electrodeposition on FTO and n-type Si substrates in sulfate medium
DOI:10.1016/j.matchemphys.2010.03.023 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2010
TC:7 AU: Khelladi, M. R.;Mentar, L.;Boubatra, M.;Azizi, A.;Kahoul, A.;
10:725:4 Effect of potential on the early stages of nucleation and growth during cobalt electrocrystallization in sulfate medium onto FTO surface
DOI:10.1016/j.matlet.2010.07.055 JN:MATERIALS LETTERS PY:2010
TC:4 AU: Mentar, L.;Khelladi, M. R.;Azizi, A.;Kahoul, A.;
10:726:1 Spin conversion of positronium in NiO/Al2O3 catalysts observed by coincidence Doppler broadening technique
DOI:10.1103/PhysRevB.82.035439 JN:PHYSICAL REVIEW B PY:2010
TC:7 AU: Zhang, H. J.;Chen, Z. Q.;Wang, S. J.;Kawasuso, A.;Morishita, N.;
10:726:2 Reaction between NiO and Al2O3 in NiO/gamma-Al2O3 catalysts probed by positronium atom
DOI:10.1016/j.apsusc.2012.11.037 JN:APPLIED SURFACE SCIENCE PY:2013
TC:1 AU: Li, C. Y.;Zhang, H. J.;Chen, Z. Q.;
10:726:3 Chemical quenching of positronium in Fe2O3/Al2O3 catalysts
DOI:10.1016/j.apsusc.2010.04.092 JN:APPLIED SURFACE SCIENCE PY:2010
TC:2 AU: Li, C.;Zhang, H. J.;Chen, Z. Q.;
10:726:4 Mono layer dispersion of CoO on Al2O3 probed by positronium atom
DOI:10.1016/j.apsusc.2013.12.162 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Liu, Z. W.;Zhang, H. J.;Chen, Z. Q.;
10:727:1 Reversible superconductivity in electrochromic indium-tin oxide films
DOI:10.1063/1.4772536 JN:APPLIED PHYSICS LETTERS PY:2012
TC:1 AU: Aliev, Ali E.;Xiong, Ka;Cho, Kyeongjae;Salamon, M. B.;
10:727:2 Temperature dependence of resistance and thermopower of thin indium tin oxide films
DOI:10.1016/j.tsf.2010.06.010 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Lin, Bo-Tsung;Chen, Yi-Fu;Lin, Juhn-Jong;Wu, Chih-Yuan;
10:727:3 Conducting properties of In2O3:Sn thin films at low temperatures
DOI:10.1007/s00339-013-7799-8 JN:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING PY:2014
TC:2 AU: Kytin, V. G.;Kulbachinskii, V. A.;Reukova, O. V.;Galperin, Y. M.;Johansen, T. H.;Diplas, S.;Ulyashin, A. G.;
10:728:1 On the transition-metal doping efficiency of zinc oxide nanocrystals
DOI:10.1063/1.3478216 JN:APPLIED PHYSICS LETTERS PY:2010
TC:10 AU: Singh, Tejinder;Mountziaris, T. J.;Maroudas, Dimitrios;
10:728:2 Transition-metal doping of small cadmium selenide clusters
DOI:10.1063/1.3680254 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Singh, Tejinder;Mountziaris, T. J.;Maroudas, Dimitrios;
10:728:3 First-principles theoretical analysis of transition-metal doping of ZnSe quantum dots
DOI:10.1063/1.4734841 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Singh, Tejinder;Mountziaris, T. J.;Maroudas, Dimitrios;
10:729:1 Mode characterization of sub-micron equilateral triangular microcavity including material's dispersion effects
DOI:10.1063/1.4720580 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Lai, C-M;Yeh, P. C.;Peng, L-H;
10:729:2 Mode characteristics of metallically coated square microcavity connected with an output waveguide
DOI:10.1063/1.3431400 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:4 AU: Che, Kai-Jun;Huang, Yong-Zhen;
10:729:3 Multimode resonances in metallically confined square-resonator microlasers
DOI:10.1063/1.3302406 JN:APPLIED PHYSICS LETTERS PY:2010
TC:7 AU: Che, Kai-Jun;Yang, Yue-De;Huang, Yong-Zhen;
10:729:4 Theoretical study of the factor of merit of porous silicon based optical biosensors
DOI:10.1063/1.3295906 JN:JOURNAL OF APPLIED PHYSICS PY:2010
TC:3 AU: Charrier, J.;Dribek, M.;
10:730:1 Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces
DOI:10.1016/j.apsusc.2013.07.162 JN:APPLIED SURFACE SCIENCE PY:2013
TC:3 AU: Li, Yang;Long, Wei;Tung, Raymond T.;
10:730:2 Inhomogeneous ohmic contacts: Barrier height and contact area determination
DOI:10.1063/1.4742142 JN:APPLIED PHYSICS LETTERS PY:2012
TC:4 AU: Li, Yang;Long, Wei;Tung, Raymond T.;
10:730:3 Schottky barrier height systematics studied by partisan interlayer
DOI:10.1016/j.tsf.2013.10.075 JN:THIN SOLID FILMS PY:2014
TC:1 AU: Long, Wei;Li, Yang;Tung, Raymond T.;
10:731:1 Ceramic Barrier Layers for Flexible Thin Film Solar Cells on Metallic Substrates: A Laboratory Scale Study for Process Optimization and Barrier Layer Properties
DOI:10.1021/am504923z JN:ACS APPLIED MATERIALS & INTERFACES PY:2014
TC:0 AU: Delgado-Sanchez, Jose-Maria;Guilera, Nuria;Francesch, Laia;Alba, Maria D.;Lopez, Laura;Sanchez, Emilio;
10:731:2 Poole-Frenkel Conduction in Cu/Nano-SnO2/Cu Arrangement
DOI:10.1155/2011/190391 JN:JOURNAL OF NANOMATERIALS PY:2011
TC:1 AU: Chenari, Hossein Mahmoudi;Sedghi, Hassan;Talebian, Mohammad;Golzan, Mir Maqsoud;Hassanzadeh, Ali;
10:731:3 Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se-2 solar cells integration on stainless steel sheet
DOI:10.1016/j.tsf.2013.06.043 JN:THIN SOLID FILMS PY:2013
TC:3 AU: Amouzou, Dodji;Guaino, Philippe;Fourdrinier, Lionel;Richir, Jean-Baptiste;Maseri, Fabrizio;Sporken, Robert;
10:731:4 Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se-2 solar cell
DOI:10.1016/j.tsf.2012.11.077 JN:THIN SOLID FILMS PY:2013
TC:4 AU: Bae, Dowon;Gho, Junghwan;Shin, Minjung;Kwon, Sehan;
10:732:1 Molecular arrangement investigation of copper phthalocyanine grown on hydrogen passivated Si(111) surfaces
DOI:10.1016/j.apsusc.2014.03.100 JN:APPLIED SURFACE SCIENCE PY:2014
TC:2 AU: Arbi, I.;Ben Hamada, B.;Souissi, A.;Menzli, S.;Ben Azzouz, C.;Laribi, A.;Akremi, A.;Chefi, C.;
10:732:2 Copper phthalocyanine growth on hydrogen-terminated Si(100) surfaces: Contrasted molecular arrangements revealed by X-ray photoelectron studies
DOI:10.1016/j.apsusc.2012.10.026 JN:APPLIED SURFACE SCIENCE PY:2013
TC:2 AU: Ben Hamada, B.;Akremi, A.;Arbi, I.;Menzli, S.;Themlin, J. -M.;Porte, L.;Chefi, C.;
10:732:3 Photoemission study of copper phthalocyanine growth on hydrogen-terminated surface: Si(100)2 x 1-H
DOI:10.1016/j.tsf.2014.07.046 JN:THIN SOLID FILMS PY:2014
TC:3 AU: Ben Hamada, B.;Souissi, A.;Menzli, S.;Arbi, I.;Akremi, A.;Chefi, C.;Derivaz, M.;
10:733:1 Electrochemical serotonin monitoring of poly (ethylenedioxythiophene):poly(sodium 4-styrenesulfonate)-modified fluorine-doped tin oxide by predeposition of self-assembled 4-pyridylporphyrin
DOI:10.1016/j.bios.2013.08.040 JN:BIOSENSORS & BIOELECTRONICS PY:2014
TC:3 AU: Song, Min-Jung;Kim, Sangsig;Min, Nam Ki;Jin, Joon-Hyung;
10:733:2 Chemical vapor synthesis of fluorine-doped SnO2 (FTO) nanoparticles
DOI:10.1007/s11051-009-9827-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2010
TC:9 AU: Suffner, Jens;Agoston, Peter;Kling, Jens;Hahn, Horst;
10:733:3 A serotonin-sensitive sensor for investigation of taste cell-to-cell communication
DOI:10.1016/j.bios.2010.06.070 JN:BIOSENSORS & BIOELECTRONICS PY:2011
TC:5 AU: Chen, Peihua;Zhang, Wei;Chen, Peng;Zhou, Ziyu;Chen, Cheng;Hu, Junsong;Wang, Ping;
10:734:1 Intermediary phases formation in Fe-Al-Si alloys during reactive sintering
DOI:10.1016/j.jallcom.2010.03.028 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:17 AU: Novak, Pavel;Knotek, Vitezslav;Voderova, Milena;Kubasek, Jiri;Serak, Jan;Michalcova, Alena;Vojtech, Dalibor;
10:734:2 Effect of reactive sintering conditions on microstructure of Fe-Al-Si alloys
DOI:10.1016/j.jallcom.2009.12.040 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:13 AU: Novak, Pavel;Michalcova, Alena;Voderova, Milena;Sima, Miroslav;Serak, Jan;Vojtech, Dalibor;Wienerova, Katerina;
10:734:3 High-temperature behaviour of Ti-Al-Si alloys produced by reactive sintering
DOI:10.1016/j.jallcom.2010.05.115 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:6 AU: Novak, Pavel;Prusa, Filip;Serak, Jan;Vojtech, Dalibor;Michalcova, Alena;
10:734:4 Reactive sintering study of a novel cemented carbide hard alloy (W0.5Al0.5)C-0.5-Ni
DOI:10.1016/j.jallcom.2010.08.118 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:2 AU: Liu, Jianwei;Ma, Xianfeng;Tang, Huaguo;Zhao, Wei;
10:735:1 Nanoflower rod wire-like structures of dual metal (Al and Cr) doped ZnO thin films: Structural, optical and electronic properties
DOI:10.1016/j.matlet.2014.06.008 JN:MATERIALS LETTERS PY:2014
TC:10 AU: Manikandan, E.;Murugan, V.;Kavitha, G.;Babu, P.;Maaza, M.;
10:735:2 Biological resemblance of cadmium sulphide seaweeds coral honeycomb nanostructures by a chemical bath deposition technique
DOI:10.1016/j.matlet.2014.01.126 JN:MATERIALS LETTERS PY:2014
TC:3 AU: Wilson, K. C.;Manikandan, E.;Ahamed, M. Basheer;
10:735:3 Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: In situ tin doping by chemical bath deposition technique
DOI:10.1016/j.jallcom.2013.09.185 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2014
TC:4 AU: Wilson, K. C.;Manikandan, E.;Ahamed, M. Basheer;Mwakikunga, B. W.;
10:736:1 Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)
DOI:10.1063/1.3611406 JN:JOURNAL OF APPLIED PHYSICS PY:2011
TC:7 AU: Zhao, X.;Phillips, L.;Reece, C. E.;Seo, Kang;Krishnan, M.;Valderrama, E.;
10:736:2 Twin symmetry texture of energetically condensed niobium thin films on sapphire substrates (a-plane Al2O3) (vol 110, 033523, 2011)
DOI:10.1063/1.4729522 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Welander, Paul B.;
10:736:3 Response to "Comment on 'Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate'" [J. Appl. Phys. 112, 016101 (2012)]
DOI:10.1063/1.4729523 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:0 AU: Zhao, X.;Philips, L.;Reece, C. E.;Seo, Kang;Krishnan, M.;Valderrama, E.;
10:737:1 Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals
DOI:10.1016/j.jcrysgro.2013.09.026 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:2 AU: Ohtani, Noboru;Ohshige, Chikashi;Katsuno, Masakazu;Fujimoto, Tatsuo;Sato, Shinya;Tsuge, Hiroshi;Ohashi, Wataru;Yano, Takayuki;Matsuhata, Hirofumi;Kitabatake, Makoto;
10:737:2 Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC
DOI:10.1063/1.4748279 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:3 AU: Mitani, Takeshi;Nakashima, Shin-ichi;Kojima, Kazutoshi;Kato, Tomohisa;Okumura, Hajime;
10:737:3 Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the [11(2)over-bar0] direction
DOI:10.1016/j.jcrysgro.2014.09.012 JN:JOURNAL OF CRYSTAL GROWTH PY:2014
TC:0 AU: Ohshige, Chikashi;Takahashi, Tatsuya;Ohtani, Noboru;Katsuno, Masakazu;Fujimoto, Tatsuo;Sato, Shinya;Tsuge, Hiroshi;Yano, Takayuki;Matsuhata, Hirofumi;Kitabatake, Makoto;
10:738:1 Anomalous behavior in ZnMgO thin films deposited by sol-gel method
DOI:10.1016/j.tsf.2010.12.188 JN:THIN SOLID FILMS PY:2011
TC:17 AU: Singh, Amanpal;Kumar, Dinesh;Khanna, P. K.;Kumar, Anuj;Kumar, Mukesh;Kumar, Mohit;
10:738:2 Characterization of ternary MgxZn1-xO thin films deposited by electron beam evaporation
DOI:10.1016/j.mssp.2011.09.002 JN:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING PY:2012
TC:0 AU: Ashraf, M.;Akhtar, S. M. J.;Qayyum, A.;
10:738:3 Structural and optical properties of post annealed Mg doped ZnO thin films deposited by the sol-gel method
DOI:10.1016/j.matlet.2013.07.104 JN:MATERIALS LETTERS PY:2013
TC:4 AU: Sengupta, Joydip;Ahmed, Arifeen;Labar, Rini;
10:739:1 TiO2 coated SnO2 nanosheet films for dye-sensitized solar cells
DOI:10.1016/j.tsf.2011.03.013 JN:THIN SOLID FILMS PY:2011
TC:11 AU: Cai, Fengshi;Yuan, Zhihao;Duan, Yueqing;Bie, Lijian;
10:739:2 Rapid thermal melted TiO2 nano-particles into ZnO nano-rod and its application for dye sensitized solar cells
DOI:10.1016/j.tsf.2010.04.081 JN:THIN SOLID FILMS PY:2010
TC:12 AU: Chao, Ching-Hsun;Chang, Chi-Lung;Chan, Chien-Hung;Lien, Shui-Yang;Weng, Ko-Wei;Yao, Kuo-Shan;
10:739:3 ZnO nanowire/TiO2 nanoparticle photoanodes prepared by the ultrasonic irradiation assisted dip-coating method
DOI:10.1016/j.tsf.2010.01.043 JN:THIN SOLID FILMS PY:2010
TC:24 AU: Gan, Xiaoyan;Li, Xiaomin;Gao, Xiangdong;Zhuge, Fuwei;Yu, Weidong;
10:740:1 The synthesis of NaSICON-type ZrNb(PO4)(3) structure by the use of Pechini method
DOI:10.1016/j.ceramint.2012.05.086 JN:CERAMICS INTERNATIONAL PY:2012
TC:6 AU: Ejehi, F.;Marashi, S. P. H.;Ghaani, M. R.;Haghshenas, D. F.;
10:740:2 Synthesis of La1-xSrxMnO3 powders by polymerizable complex method: Evaluation of structural, morphological and electrical properties
DOI:10.1016/j.ceramint.2011.03.069 JN:CERAMICS INTERNATIONAL PY:2011
TC:2 AU: da Conceicao, Leandro;Ribeiro, Nielson F. P.;Souza, Mariana M. V. M.;
10:740:3 Synthesis and Characterization of Nanostructured Niobium and Molybdenum Nitrides by a Two-Step Transition Metal Halide Approach
DOI:10.1111/j.1551-2916.2011.04412.x JN:JOURNAL OF THE AMERICAN CERAMIC SOCIETY PY:2011
TC:13 AU: Choi, Daiwon;Kumta, Prashant N.;
10:741:1 Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films
DOI:10.1016/j.mseb.2012.12.005 JN:MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE PY:2013
TC:2 AU: Gao, Xingguo;Liu, Chao;Yin, Chunhai;Tao, Dongyan;Yang, Cheng;Man, Baoyuan;
10:741:2 Structural and magnetic properties of GaGdN/GaN superlattice structures
DOI:10.1016/j.tsf.2009.10.032 JN:THIN SOLID FILMS PY:2010
TC:8 AU: Zhou, YiKai;Choi, SungWoo;Kimura, Shigeya;Emura, Shuichi;Hasegawa, Shigehiko;Asahi, Hajime;
10:741:3 Magnetism in GaN layers implanted by La, Gd, Dy and Lu
DOI:10.1016/j.tsf.2011.04.110 JN:THIN SOLID FILMS PY:2011
TC:2 AU: Sofer, Z.;Sedmidubsky, D.;Moram, M.;Mackova, A.;Marysko, M.;Hejtmanek, J.;Buchal, C.;Hardtdegen, H.;Vaclavu, M.;Perina, V.;Groetzschel, R.;Mikulics, M.;
10:742:1 DFT calculations of the CO adsorption on Mn, Fe, Co, and Au deposited at MgO (100) and CdO (100)
DOI:10.1016/j.apsusc.2012.06.045 JN:APPLIED SURFACE SCIENCE PY:2012
TC:5 AU: Eid, Kh M.;Taha, H. O.;Kamel, M. A.;Ashour, A. E.;Halim, W. S. Abdel;
10:742:2 Interaction of O-2 and N-2 molecules with Au deposited on regular and defective CaO (001) surfaces: Density functional calculations
DOI:10.1016/j.tsf.2013.08.006 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Aal, S. Abdel;Shalabi, A. S.;Halim, W. S. Abdel;
10:742:3 Density functional study of NO adsorption on undefected and oxygen defective Au-BaO(1 0 0) surfaces
DOI:10.1016/j.apsusc.2014.04.006 JN:APPLIED SURFACE SCIENCE PY:2014
TC:0 AU: Anez, Rafael;Sierraalta, Anibal;Bastardo, Anelisse;Coll, David;Garcia, Belkis;
10:743:1 Growth of flower-like copper oxide nano structures by glow discharge in water
DOI:10.1016/j.ceramint.2014.07.136 JN:CERAMICS INTERNATIONAL PY:2014
TC:2 AU: Goli, M.;Haratizadeh, H.;Abrishami, M. Ebrahimizadeh;
10:743:2 CuO/Ta2O5 core/shell nanoparticles synthesized in immersed arc-discharge: production conditions and dielectric response
DOI:10.1007/s11051-012-1297-3 JN:JOURNAL OF NANOPARTICLE RESEARCH PY:2012
TC:4 AU: Karahaliou, P. K.;Svarnas, P.;Georga, S. N.;Xanthopoulos, N. I.;Delaportas, D.;Krontiras, C. A.;Alexandrou, I.;
10:743:3 CuO/Ta2O5 core/shell nanoparticles produced by arc-discharge in water
DOI:10.1016/j.matlet.2011.05.044 JN:MATERIALS LETTERS PY:2011
TC:5 AU: Delaportas, D.;Svarnas, P.;Alexandrou, I.;Georga, S. N.;Krontiras, C. A.;Xanthopoulos, N. I.;Siokou, A.;Chalker, P. R.;
10:744:1 Luminance enhancement of electroluminescent devices using highly dielectric UV-curable polymer and oxide nanoparticle composite
DOI:10.1364/OME.4.001824 JN:OPTICAL MATERIALS EXPRESS PY:2014
TC:0 AU: Chung, Seok-Hwan;Song, Seongkyu;Yang, Kee-Jeong;Jeong, Soon Moon;Choi, Byeongdae;
10:744:2 Enhanced electroluminescence performances by controlling the position of carbon nanotubes
DOI:10.1063/1.4767226 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:2 AU: Kim, Jin-Young;Kim, Hoonbae;Jung, Donggeun;Yu, SeGi;
10:744:3 Direct growth of individual carbon nanotubes on a flexible plastic substrate via selective heating
DOI:10.1088/0957-4484/21/22/225605 JN:NANOTECHNOLOGY PY:2010
TC:3 AU: Carnahan, D.;Esposito, D.;Izrailit, I.;Vasenkov, A. V.;
10:745:1 Microstructures and magnetic properties of L1(0) FePt films deposited on NaCl-type films
DOI:10.1016/j.tsf.2013.01.038 JN:THIN SOLID FILMS PY:2013
TC:0 AU: Sun, T. H.;Chen, S. C.;Su, W. H.;Chen, J. R.;
10:745:2 Surface roughness and magnetic properties of L1(0) FePt films on MgO/CrRu/TiN
DOI:10.1063/1.4737573 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:5 AU: Kim, Chang Soo;Choi, Dooho;Chung, Suk;Wise, Adam;Dang, Ying Yi;Kryder, Mark H.;
10:745:3 Tunneling magnetoresistance of perpendicular magnetic tunnel junction using L1(0) FePt electrodes on MgO/CrRu/TiN under-layers
DOI:10.1063/1.4865882 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Kim, Chang Soo;Jung, Jin-Won;Choi, Dooho;Sahashi, Masashi;Kryder, Mark H.;
10:746:1 Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn
DOI:10.1016/j.tsf.2010.06.006 JN:THIN SOLID FILMS PY:2010
TC:6 AU: Pau, J. L.;Scheffler, L.;Hernandez, M. J.;Cervera, M.;Piqueras, J.;
10:746:2 Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors
DOI:10.1016/j.tsf.2013.04.051 JN:THIN SOLID FILMS PY:2013
TC:7 AU: Kim, CheolGyu;Lee, Nam-Hyun;Kwon, Young-Kyu;Kang, Bongkoo;
10:746:3 Effects of Growth Temperature and Annealing on Properties of Zn3Sn2O7 Thin Films and Application in TFTs
DOI:10.1007/s11664-013-2589-9 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:3 AU: Chen, Yong-Yue;Cai, Xi-Kun;Ye, Zhen-Yu;Wang, Xiong;Zhang, Bing-Po;Wu, Hui-Zhen;
10:747:1 Quantum efficiency coefficient for photogeneration of carriers in SbSI nanowires
DOI:10.1016/j.optmat.2013.06.003 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Nowak, M.;Bober, L.;Borkowski, B.;Kepinska, M.;Szperlich, P.;Stroz, D.;Sozanska, M.;
10:747:2 One-dimensional single crystalline antimony sulfur iodide, SbSI
DOI:10.1016/j.matlet.2012.07.050 JN:MATERIALS LETTERS PY:2012
TC:4 AU: Cho, Insu;Min, Bong-Ki;Joo, Sang Woo;Sohn, Youngku;
10:747:3 Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires
DOI:10.1016/j.optmat.2013.01.020 JN:OPTICAL MATERIALS PY:2013
TC:5 AU: Nowak, Marian;Szperlich, Piotr;
10:748:1 Response of Si- and Al-doped graphenes toward HCN: A computational study
DOI:10.1016/j.apsusc.2012.11.021 JN:APPLIED SURFACE SCIENCE PY:2013
TC:14 AU: Rastegar, Somayeh F.;Peyghan, Ali Ahmadi;Hadipour, Nasser L.;
10:748:2 Direct synthesis of tin oxide nanotubes on microhotplates using carbon nanotubes as templates
DOI:10.1557/jmr.2010.27 JN:JOURNAL OF MATERIALS RESEARCH PY:2011
TC:6 AU: Parthangal, Prahalad;Cavicchi, Richard E.;Meier, Douglas C.;Herzing, Andrew;Zachariah, Michael R.;
10:748:3 NO2 detection by nanosized AlN sheet in the presence of NH3: DFT studies
DOI:10.1016/j.apsusc.2013.03.019 JN:APPLIED SURFACE SCIENCE PY:2013
TC:5 AU: Rastegar, Somayeh F.;Peyghan, Ali Ahmadi;Ghenaatian, H. R.;Hadipour, Nasser L.;
10:749:1 Interaction of the components in the Gd-Ni-Sn ternary system at 770 K
DOI:10.1016/j.jallcom.2010.05.170 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:7 AU: Romaka, L.;Romaka, V. V.;Stadnyk, Yu.;Demchenko, P.;
10:749:2 Contribution to the investigation of ternary Lu-Ni-Sn system
DOI:10.1016/j.jallcom.2011.01.074 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2011
TC:4 AU: Romaka, V. V.;Romaka, L.;
10:749:3 LuNi5Sn: A first representative of RNi5Sn stannides with CeCu5Au structure
DOI:10.1016/j.jallcom.2009.12.073 JN:JOURNAL OF ALLOYS AND COMPOUNDS PY:2010
TC:4 AU: Romaka, V. V.;Marciniak, B.;Romaka, L.;Gorelenko, Yu.;Pavlyuk, V.;
10:750:1 Molecular Composites Obtained by Polyaniline Synthesis in the Presence of p-Octasulfonated Calixarene Macrocycle
DOI:10.1002/app.37605 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2013
TC:2 AU: Grigoras, Mircea;Catargiu, Ana Maria;Tudorache, Florin;
10:750:2 Didecyl Ester of 4-Sulfophthalic Acid as a Plast Dopant and Emulsifier in the Chemical Polymerization of Aniline into Polyaniline Salt
DOI:10.1002/app.32636 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2010
TC:1 AU: Palaniappan, Srinivasan;Ajit, Singh;
10:750:3 Molecular Composites Created by the Solution Blending of Polyaniline and Sulfonated Poly(Ether Sulfone)
DOI:10.1002/app.33110 JN:JOURNAL OF APPLIED POLYMER SCIENCE PY:2011
TC:2 AU: Kanhegaokar, Shivkalya A.;Chunji, Gao;Choi, Fun-Young;Kwon, O-Pi;Lee, Suck-Hyun;
10:751:1 Electrostatically driven collapsible Au thin films assembled using transfer printing for thermal switching
DOI:10.1063/1.4720397 JN:APPLIED PHYSICS LETTERS PY:2012
TC:3 AU: Keum, Hohyun;Seong, Myunghoon;Sinha, Sanjiv;Kim, Seok;
10:751:2 Electrostatically driven collapsible Au thin films assembled using transfer printing for thermal switching (vol 100, 211904, 2012)
DOI:10.1063/1.4811126 JN:APPLIED PHYSICS LETTERS PY:2013
TC:0 AU: Keum, Hohyun;Seong, Myunghoon;Sinha, Sanjiv;Kim, Seok;
10:752:1 Synthesis of ZnO coated activated carbon aerogel by simple sol-gel route
DOI:10.1039/c0jm03204b JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:7 AU: Han, T. Yong-Jin;Worsley, Marcus A.;Baumann, Theodore F.;Satcher, Joe H., Jr.;
10:752:2 Controllable synthesis of hexagonal ZnO-carbon core-shell microrods and the removal of ZnO to form hexagonal carbon microtubes
DOI:10.1016/j.matchemphys.2013.03.048 JN:MATERIALS CHEMISTRY AND PHYSICS PY:2013
TC:1 AU: Xiao, Yong;He, Wenqi;Gao, Chuang;Zheng, Mingtao;Lie, Bingfu;Liu, Xiaotang;Liu, Yingliang;
10:753:1 Mechanism of contact resistance formation in ohmic contacts with high dislocation density
DOI:10.1063/1.3702850 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:8 AU: Sachenko, A. V.;Belyaev, A. E.;Boltovets, N. S.;Konakova, R. V.;Kudryk, Ya Ya;Novitskii, S. V.;Sheremet, V. N.;Li, J.;Vitusevich, S. A.;
10:753:2 Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
DOI:10.1063/1.4752715 JN:JOURNAL OF APPLIED PHYSICS PY:2012
TC:1 AU: Sachenko, A. V.;Belyaev, A. E.;Boltovets, N. S.;Vinogradov, A. O.;Kladko, V. P.;Konakova, R. V.;Kudryk, Ya. Ya.;Kuchuk, A. V.;Sheremet, V. N.;Vitusevich, S. A.;
10:754:1 Study of defect-induced ferromagnetism in hydrogenated anatase TiO2:Co (vol 107, 113916, 2010) (Retracted article. See vol. 116, 059902, 2014)
DOI:10.1063/1.4824175 JN:JOURNAL OF APPLIED PHYSICS PY:2013
TC:1 AU: Singhal, R. K.;Samariya, Arvind;Kumar, Sudhish;Xing, Y. T.;Jain, D. C.;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:754:2 Erratum: 'Study of defect-induced ferromagnetism in hydrogenated anatase TiO2:Co' [J. Appl. Phys. 107, 113916 (2010)] (Retraction of vol 114, 129902, 2013)
DOI:10.1063/1.4881076 JN:JOURNAL OF APPLIED PHYSICS PY:2014
TC:0 AU: Singhal, R. K.;Samariya, Arvind;Kumar, Sudhish;Xing, Y. T.;Jain, D. C.;Dolia, S. N.;Deshpande, U. P.;Shripathi, T.;Saitovitch, Elisa B.;
10:755:1 Dynamical X-ray Diffraction from ZnSySe1-y/GaAs (001) Multilayers and Superlattices with Dislocations
DOI:10.1007/s11664-012-2012-y JN:JOURNAL OF ELECTRONIC MATERIALS PY:2012
TC:2 AU: Rago, P. B.;Suarez, E. N.;Jain, F. C.;Ayers, J. E.;
10:755:2 Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities
DOI:10.1007/s11664-013-2628-6 JN:JOURNAL OF ELECTRONIC MATERIALS PY:2013
TC:0 AU: Rago, P. B.;Jain, F. C.;Ayers, J. E.;
10:756:1 Effects of annealing on optical and electrical characteristics of p-type semiconductor copper (II) oxide electrodeposits
DOI:10.1016/j.tsf.2011.10.018 JN:THIN SOLID FILMS PY:2012
TC:2 AU: Izaki, Masanobu;
10:756:2 Epitaxial electrodeposition of chiral CuO films from copper(II) complexes of malic acid on Cu(111) and Cu(110) single crystals
DOI:10.1039/c0jm03423a JN:JOURNAL OF MATERIALS CHEMISTRY PY:2011
TC:9 AU: Gudavarthy, Rakesh V.;Burla, Niharika;Kulp, Elizabeth A.;Limmer, Steven J.;Sinn, Ekkehard;Switzer, Jay A.;
10:757:1 Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material
DOI:10.1155/2014/347858 JN:JOURNAL OF NANOMATERIALS PY:2014
TC:0 AU: Lin, Yu-Hsien;Chou, Jay-Chi;
10:757:2 Influence of Weight Ratio of Poly(4-vinylphenol) Insulator on Electronic Properties of InGaZnO Thin-Film Transistor
DOI:10.1155/2012/698123 JN:JOURNAL OF NANOMATERIALS PY:2012
TC:1 AU: Chiu, C. J.;Pei, Z. W.;Chang, S. P.;Chang, S. J.;
10:758:1 Gamma radiation effects on indium-zinc oxide thin-film transistors
DOI:10.1016/j.tsf.2013.04.148 JN:THIN SOLID FILMS PY:2013
TC:5 AU: Indluru, A.;Holbert, K. E.;Alford, T. L.;
10:758:2 Positive bias temperature instability of irradiated n-channel thin film transistors
DOI:10.1016/j.tsf.2014.01.079 JN:THIN SOLID FILMS PY:2014
TC:0 AU: Jelenkovic, Emil V.;Kovacevic, Milan S.;Stupar, Dragan Z.;Jha, Shrawan;Bajic, Jovan S.;Tong, K. Y.;